Neutralization of Hydroxide Ion in Melt-Grown NaCl Crystals

Science.gov (United States)

Otterson, Dumas A.

1961-01-01

Many recent studies of solid-state phenomena, particularly in the area of crystal imperfections, have involved the use of melt-grown NaCl single crystals. Quite often trace impurities in these materials have had a prominent effect on these phenomena. Trace amounts of hydroxide ion have been found in melt-grown NaCl crystals. This paper describes a nondestructive method of neutralizing the hydroxide ion in such crystals. Crystals of similar hydroxide content are maintained at an elevated temperature below the melting point of NaCl in a flowing atmosphere containing. dry hydrogen chloride. Heat treatment is continued until an analysis of the test specimens shows no excess hydroxide ion. A colorimetric method previously described4 is used for this analysis.

Growth and antimicrobial studies of γ-glycine crystal grown using CuSO4

Science.gov (United States)

Vijayalakshmi, V.; Dhanasekaran, P.

2018-05-01

In the current work single crystals of pure and 1M of CuSO4-added glycine were grown by slow evaporation method and its optical and antimicrobial properties were studied. The Polymorph of glycine transforms from a-glycine to γ-glycine due to the incorporation of CuSO4 on glycine was affirmed by the PXRD and FTIR studies. The impact of CuSO4 on the antimicrobial action of the grown samples was deliberate by utilizing the agar diffusion method.

Fabrication of radiation detectors with HgI2 crystals grown from a solution

International Nuclear Information System (INIS)

Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

1979-01-01

Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

International Nuclear Information System (INIS)

Taboada, A. G.; Kreiliger, T.; Falub, C. V.; Känel, H. von; Meduňa, M.; Salvalaglio, M.; Miglio, L.; Isa, F.; Barthazy Meier, E.; Müller, E.; Isella, G.

2016-01-01

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images

The performance studies of DKDP crystals grown by a rapid horizontal growth method

Science.gov (United States)

Xie, Xiaoyi; Qi, Hongji; Wang, Bin; Wang, Hu; Chen, Duanyang; Shao, Jianda

2018-04-01

A deuterated potassium dihydrogen phosphate (DKDP) crystal with about 70% deuterium level was grown by a rapid horizontal growth method with independent design equipment, which includes a continuous filtration system. The cooling program during crystal growth was designed according to a self-developed software to catch the size of growing crystal in real time. The crystal structure, optical performance and laser induced damage threshold (LIDT) of this DKDP crystal were investigated in this paper. The deuterium concentration of the crystal was confirmed by the neutron diffraction technique, which was effective and available in determining a complete range of deuteration level. The dielectric property was measured to evaluate the perfection of the lattice. The transmittance and LIDT were carried out further to evaluate the optical and functional properties of this DKDP crystal grown in the rapid horizontal growth technique. All of the detailed characterization for DKDP figured out that the 70% deuterated KDP crystal grown in this way had relatively good qualities.

Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

Science.gov (United States)

Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

2016-02-01

The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

Detached phenomenon: Its effect on the crystal quality of Ga{sub (1−x)}In{sub x}Sb bulk crystal grown by the VDS technique

Energy Technology Data Exchange (ETDEWEB)

Gadkari, Dattatray, E-mail: db.gadkari@gmail.com [Department of Physics, Mithibai College, Mumbai 400056 (India)

2013-05-15

Vertical directional solidification (VDS) technique is used on the combined growth principals of the conventional methods since 1994, which leads to the detached growth. For evaluation of the detached growth, five bulk ingots of indium doped gallium–antimonide GaSb:In (In = 0.5, 0.25, 0.15) have been grown – without the seed, without contact to the ampoule wall, without coating and without external pressure. The gap is attributed to compensate the differential thermal dilatation that is grown with the reduced diameter than the diameter of the ampoule. VDS experiments have been proved that the sum of the contact angle and growth angle is large enough to allow detachment without any additional pressure difference under the melt to offset hydrostatic pressure. A meniscus forms at the bottom of the melt, the capillarity effect establishes due to which spontaneous gap could be created by the melt free surface, thus no thermal shear stress and thermo-mechanical stresses at the interface. Detached grown bulk GaSb:In crystals showed superior crystal quality with the highest physical properties and mobility than the crystals grown ever. The axial and radial composition profile of the grown GaSb:In ingots showed variation ≤10%. From the conical region, dislocation density decreases in the growth direction and reaches less than 10{sup 3} cm{sup −2}. - Highlights: ► Detachment: without seed, without ampoule contact, without coating, without external pressure. ► Detached ingot growth samples showed the highest physical properties and the carrier mobility. ► Initial to final transition: in detached growth, dislocations decreases and less than 10{sup 3} cm{sup −2}. ► Detached samples: Raman spectrum shows only TO phonon (110) direction of single orientation. ► Detached ingot: FTIR shows highest transmissions % but decreases on increase doping in samples.

Growth and characterization of CaFe1-xCoxAsF single crystals by CaAs flux method

Science.gov (United States)

Ma, Yonghui; Hu, Kangkang; Ji, Qiucheng; Gao, Bo; Zhang, Hui; Mu, Gang; Huang, Fuqiang; Xie, Xiaoming

2016-10-01

Millimeter sized single crystals of CaFe1-x Cox AsF were grown using a self-flux method. It is found that high-quality single crystals can be grown from three approaches with different initial raw materials. The chemical compositions and crystal structure were characterized carefully. Compared with the undoped parent phase CaFeAsF, the crystal lattice along the c-axis is suppressed by the Co substitution while that along the a-axis expands slightly. Superconductivity with the critical transition Tc as high as 21 K was confirmed by both the resistivity and magnetic susceptibility measurements in the sample with x=0.118. Moreover, it is found that Tc can be enhanced for about 1 K under the very small hydrostatic pressure of 0.22 GPa, which is more quick than that reported in the polycrystalline samples. Our results are a promotion for the physical investigations of 1111 phase iron-pnictide superconductors.

Microhardness studies on as-grown faces of NaClO3 and NaBrO3 ...

Indian Academy of Sciences (India)

Unknown

studies are made on as-grown faces of these crystals at various loads. Typical cracks are ... crystals is around 1⋅6 suggesting that these are moderately harder samples. ... the values of elastic constants (C44) and are found to be close to the experimental results. ..... the structure of NaClO3 and NaBrO3 is not as simple as.

Large-sized SmBCO single crystals with T sub c over 93 K grown in atmospheric ambient by crystal pulling

CERN Document Server

Yao Xin; Shiohara, Y

2003-01-01

Sm sub 1 sub + sub x Ba sub 2 sub - sub x Cu sub 3 O sub z (SmBCO) single crystals were grown under atmospheric ambient by the top-seeded solution growth method. Inductively coupled plasma results indicate that there is negligible Sm substitution for Ba sites in the grown SmBCO crystals, although they crystallized from different Ba-Cu-O solvents with a wide composition range (Ba/Cu ratio of 0.5-0.6). As a result, these crystals show high superconducting critical transition temperature values (T sub c) of over 93 K with a sharp transition width after oxygenation. A large-sized crystal with an a-b plane of 23 x 22 mm sup 2 and a c-axis of 19 mm was obtained at a high growth rate of nearly 0.13 mm h sup - sup 1. In short, with more controllable thermodynamic parameters, SmBCO single crystals can readily achieve both large size and high superconducting properties. (rapid communication)

Annealing behavior of solution grown polyethylene single crystals

NARCIS (Netherlands)

Loos, J.; Tian, M.

2006-01-01

The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

Dramatic improvement of crystal quality for low-temperature-grown rabbit muscle aldolase

International Nuclear Information System (INIS)

Park, HaJeung; Rangarajan, Erumbi S.; Sygusch, Jurgen; Izard, Tina

2010-01-01

Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination. Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination. It was concluded that the improvement of crystal quality as indicated by the higher resolution of the new RMA–LC4 complex crystals was a consequence of the introduction of new lattice contacts at lower temperature. The lattice contacts corresponded to an increased number of interactions between high-entropy side chains that mitigate the lattice strain incurred upon cryocooling and accompanying mosaic spread increases. The thermodynamically unfavorable immobilization of high-entropy side chains used in lattice formation was compensated by an entropic increase in the bulk-solvent content owing to the greater solvent content of the crystal lattice

Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Science.gov (United States)

Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

2018-04-01

This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

Study of gel grown mixed crystals of Bax Ca ((IO3) 4

Indian Academy of Sciences (India)

The growth of mixed crystals of BaCa1–(IO3)4 were carried out with simple gel method. The effect of various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of reactants on the growth was studied. Crystals having different morphologies and habits were obtained. The grown ...

Thermal behaviour of strontium tartrate single crystals grown in gel

Indian Academy of Sciences (India)

Thermal behaviour of strontium tartrate crystals grown with the aid of sodium metasilicate gel is investigated using thermogravimetry (TG) and differential thermal analysis (DTA). Effect of magnetic field and dopant (Pb)2+ on the crystal stability is also studied using thermal analysis. This study reveals that water molecules are ...

Electrolytic coloration of air-grown sodium fluoride crystals

International Nuclear Information System (INIS)

Gu Hongen; Han Li; Song Cuiying; Guo Meili; Wang Na

2007-01-01

Air-grown sodium fluoride crystals were colored electrolytically by using a pointed cathode at various temperatures and electric field strengths, which should mainly benefit appropriate coloration temperatures and electric field strengths. O 2 - , F, M, N 1 , N 2 color centers and O 2- -F + complexes were produced in the colored crystals. Current-time curves for the electrolytic colorations were given, and activation energy for the V color center migration was determined. The formation of the color centers was explained

Growth and study of some gel grown group II single crystals of iodate

Indian Academy of Sciences (India)

Unknown

Abstract. Single crystals of calcium iodate and barium iodate were grown by simple gel technique by single diffusion method. The optimum conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of the reactants etc. Crystals having different.

Apocrustacyanin C(1) crystals grown in space and on earth using vapour-diffusion geometry: protein structure refinements and electron-density map comparisons.

Science.gov (United States)

Habash, Jarjis; Boggon, Titus J; Raftery, James; Chayen, Naomi E; Zagalsky, Peter F; Helliwell, John R

2003-07-01

Models of apocrustacyanin C(1) were refined against X-ray data recorded on Bending Magnet 14 at the ESRF to resolutions of 1.85 and 2 A from a space-grown and an earth-grown crystal, respectively, both using vapour-diffusion crystal-growth geometry. The space crystals were grown in the APCF on the NASA Space Shuttle. The microgravity crystal growth showed a cyclic nature attributed to Marangoni convection, thus reducing the benefits of the microgravity environment, as reported previously [Chayen et al. (1996), Q. Rev. Biophys. 29, 227-278]. A subsequent mosaicity evaluation, also reported previously, showed only a partial improvement in the space-grown crystals over the earth-grown crystals [Snell et al. (1997), Acta Cryst. D53, 231-239], contrary to the case for lysozyme crystals grown in space with liquid-liquid diffusion, i.e. without any major motion during growth [Snell et al. (1995), Acta Cryst. D52, 1099-1102]. In this paper, apocrustacyanin C(1) electron-density maps from the two refined models are now compared. It is concluded that the electron-density maps of the protein and the bound waters are found to be better overall for the structures of apocrustacyanin C(1) studied from the space-grown crystal compared with those from the earth-grown crystal, even though both crystals were grown using vapour-diffusion crystal-growth geometry. The improved residues are on the surface of the protein, with two involved in or nearby crystal lattice-forming interactions, thus linking an improved crystal-growth mechanism to the molecular level. The structural comparison procedures developed should themselves be valuable for evaluating crystal-growth procedures in the future.

Effect of amaranth dye on the growth and properties of conventional and SR method grown KAP single crystals

Science.gov (United States)

Babu Rao, G.; P., Rajesh; Ramasamy, P.

2018-04-01

The 0.1 mol% amaranth added KAP single crystals were grown from aqueous solutions by both slow evaporation solution technique and Sankaranarayanan-Ramasamy method. The single crystal having dimension of 45 mm length and 12 mm diameter was grown with growth rate of 1.5 mm/day using SR method. 87 % transmittance is obtained for SR method grown amaranth added KAP single crystal. The high intense luminescence at 661 nm is obtained from amaranth added conventional and SR method grown KAP single crystal. The amaranth added KAP single crystal possesses good mechanical and laser damage threshold stability.

Molecular Dynamic Simulation of Space and Earth-Grown Crystal Structures of Thermostable T1 Lipase Geobacillus zalihae Revealed a Better Structure.

Science.gov (United States)

Ishak, Siti Nor Hasmah; Aris, Sayangku Nor Ariati Mohamad; Halim, Khairul Bariyyah Abd; Ali, Mohd Shukuri Mohamad; Leow, Thean Chor; Kamarudin, Nor Hafizah Ahmad; Masomian, Malihe; Rahman, Raja Noor Zaliha Raja Abd

2017-09-25

Less sedimentation and convection in a microgravity environment has become a well-suited condition for growing high quality protein crystals. Thermostable T1 lipase derived from bacterium Geobacillus zalihae has been crystallized using the counter diffusion method under space and earth conditions. Preliminary study using YASARA molecular modeling structure program for both structures showed differences in number of hydrogen bond, ionic interaction, and conformation. The space-grown crystal structure contains more hydrogen bonds as compared with the earth-grown crystal structure. A molecular dynamics simulation study was used to provide insight on the fluctuations and conformational changes of both T1 lipase structures. The analysis of root mean square deviation (RMSD), radius of gyration, and root mean square fluctuation (RMSF) showed that space-grown structure is more stable than the earth-grown structure. Space-structure also showed more hydrogen bonds and ion interactions compared to the earth-grown structure. Further analysis also revealed that the space-grown structure has long-lived interactions, hence it is considered as the more stable structure. This study provides the conformational dynamics of T1 lipase crystal structure grown in space and earth condition.

Electrical properties of zirconium diselenide single crystals grown by iodine transport method

International Nuclear Information System (INIS)

Patel, S.G.; Agarwal, M.K.; Batra, N.M.; Lakshminarayana, D.

1998-01-01

Single crystals of zirconium diselenide (ZrSe 2 ) were grown by chemical vapour transport method using iodine as the transporting agent. The crystals were found to exhibit metallic behaviour in the temperature range 77-300 K and semiconducting nature in 300-443 K range. The measurements of thermoelectric power and conductivity enabled the determination of both carrier mobility and carrier concentration. The variation of carrier mobility and carrier concentration with temperature indicates the presence of deep trapping centres and their reduction with temperature in these crystals. (author)

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

International Nuclear Information System (INIS)

Kudrawiec, R.; Poloczek, P.; Misiewicz, J.; Korpijaervi, V.-M.; Laukkanen, P.; Pakarinen, J.; Dumitrescu, M.; Guina, M.; Pessa, M.

2009-01-01

The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

Annihilation characteristics in as-grown and electron irradiated Zn II-VI semiconductors

International Nuclear Information System (INIS)

Moser, P.; La Cruz, R.M. de; Pareja, R.

1991-01-01

The temperature dependence of the positron lifetime has been investigated in as-grown crystals of Zns, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. Zns and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of Zns, ZnSe and ZnTe, respectively. 8 refs., 3 figs

Annihilation characteristics in As-grown and electron irradiated Zn II-VI semiconductors

International Nuclear Information System (INIS)

Cruz, R.M. de la; Pareja, R.; Moser, P.

1992-01-01

The temperature dependence of the positron lifetime has been investigated in as-grown crystals of ZnS, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. ZnS and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of ZnS, ZnSe and ZnTe, respectively

Relaxor properties of barium titanate crystals grown by Remeika method

Science.gov (United States)

Roth, Michel; Tiagunov, Jenia; Dul'kin, Evgeniy; Mojaev, Evgeny

2017-06-01

Barium titanate (BaTiO3, BT) crystals have been grown by the Remeika method using both the regular KF and mixed KF-NaF (0.6-0.4) solvents. Typical acute angle "butterfly wing" BT crystals have been obtained, and they were characterized using x-ray diffraction, scanning electron microscopy (including energy dispersive spectroscopy), conventional dielectric and acoustic emission methods. A typical wing has a triangular plate shape which is up to 0.5 mm thick with a 10-15 mm2 area. The plate has a (001) habit and an atomically smooth outer surface. Both K+ and F- solvent ions are incorporated as dopants into the crystal lattice during growth substituting for Ba2+ and O2- ions respectively. The dopants' distribution is found to be inhomogeneous, their content being almost an order of magnitude higher (up to 2 mol%) at out surface of the plate relatively to the bulk. A few μm thick surface layer is formed where a multidomain ferroelectric net is confined between two≤1 μm thick dopant-rich surfaces. The layer as a whole possess relaxor ferroelectric properties, which is apparent from the appearance of additional broad maxima, Tm, in the temperature dependence of the dielectric permittivity around the ferroelectric phase transition. Intense acoustic emission responses detected at temperatures corresponding to the Tm values allow to observe the Tm shift to lower temperatures at higher frequencies, or dispersion, typical for relaxor ferroelectrics. The outer surface of the BT wing can thus serve as a relaxor thin film for various electronic application, such as capacitors, or as a substrate for BT-based multiferroic structure. Crystals grown from KF-NaF fluxes contain sodium atoms as an additional impurity, but the crystal yield is much smaller, and while the ferroelectric transition peak is diffuse it does not show any sign of dispersion typical for relaxor behavior.

Anodically-grown TiO_2 nanotubes: Effect of the crystallization on the catalytic activity toward the oxygen reduction reaction

International Nuclear Information System (INIS)

Sacco, Adriano; Garino, Nadia; Lamberti, Andrea; Pirri, Candido Fabrizio; Quaglio, Marzia

2017-01-01

Highlights: • Anodically-grown TiO_2 nanotubes as catalysts for the oxygen reduction reaction. • Amorphous NTs compared to thermal- and vapor-treated crystalline nanostructures. • The selection of the crystallization conditions leads to performance similar to Pt. - Abstract: In this work we investigated the behavior of TiO_2 nanotube (NT) arrays, grown by anodic oxidation of Ti foil, as catalysts for the oxygen reduction reaction (ORR) in alkaline water solution. In particular, as-grown amorphous NTs were compared to crystalline anatase nanostructures, obtained following two different procedures, namely thermal and vapor-induced crystallizations. The catalytic activity of these materials toward the ORR was evaluated by cyclic voltammetry measurements. ORR polarization curves, combined with the rotating disk technique, indicated a predominant four-electrons reduction path, especially for crystalline samples. The effect of the structural characteristics of the investigated materials on the catalytic activity was analyzed in details by electrochemical impedance spectroscopy. The catalytic performance of the crystalline NTs is only slightly lower with respect to the reference material for fuel cell applications, namely platinum, but is in line with other cost-effective catalysts recently proposed in the literature. However, if compared to the larger part of these low-cost catalysts, anodically-grown TiO_2 NTs are characterized by a synthesis route which is highly reproducible and easily up-scalable.

DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT

Directory of Open Access Journals (Sweden)

L. I. Guzilova

2015-05-01

Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values ​​ were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values ​​obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Science.gov (United States)

Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

2017-01-01

GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

Magnetism and superconductivity in CeFe2-xTxAs2 (T = Co and Ni) single crystals

International Nuclear Information System (INIS)

Thamizhavel, A.

2010-01-01

Single crystals of pure and transition metal doped CaFe 2- x T x As 2 (T = Co and Ni) have been grown by flux method using molten Sn as solvent. The magnetic and superconducting properties of the grown crystals were studied by measuring the electrical resistivity, magnetic susceptibility and neutron diffraction measurements. A spin density wave (SDW)/structural transition is observed at 170 K for the pure CaFe 2 As 2 single crystal and it gets suppressed with T (Co and Ni) doping. For an optimum dopant concentration of x = 0.06, the sample becomes superconducting. From the detailed studies on CaFe 2- x Ni x As 2 single crystals we have constructed a magnetic phase diagram. (author)

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

2017-01-15

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

Anodically-grown TiO{sub 2} nanotubes: Effect of the crystallization on the catalytic activity toward the oxygen reduction reaction

Energy Technology Data Exchange (ETDEWEB)

Sacco, Adriano, E-mail: adriano.sacco@iit.it [Center for Sustainable Future Technologies @Polito, Istituto Italiano di Tecnologia, Corso Trento 21, 10129, Torino (Italy); Garino, Nadia [Center for Sustainable Future Technologies @Polito, Istituto Italiano di Tecnologia, Corso Trento 21, 10129, Torino (Italy); Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129, Torino (Italy); Lamberti, Andrea, E-mail: andrea.lamberti@polito.it [Center for Sustainable Future Technologies @Polito, Istituto Italiano di Tecnologia, Corso Trento 21, 10129, Torino (Italy); Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129, Torino (Italy); Pirri, Candido Fabrizio [Center for Sustainable Future Technologies @Polito, Istituto Italiano di Tecnologia, Corso Trento 21, 10129, Torino (Italy); Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129, Torino (Italy); Quaglio, Marzia [Center for Sustainable Future Technologies @Polito, Istituto Italiano di Tecnologia, Corso Trento 21, 10129, Torino (Italy)

2017-08-01

Highlights: • Anodically-grown TiO{sub 2} nanotubes as catalysts for the oxygen reduction reaction. • Amorphous NTs compared to thermal- and vapor-treated crystalline nanostructures. • The selection of the crystallization conditions leads to performance similar to Pt. - Abstract: In this work we investigated the behavior of TiO{sub 2} nanotube (NT) arrays, grown by anodic oxidation of Ti foil, as catalysts for the oxygen reduction reaction (ORR) in alkaline water solution. In particular, as-grown amorphous NTs were compared to crystalline anatase nanostructures, obtained following two different procedures, namely thermal and vapor-induced crystallizations. The catalytic activity of these materials toward the ORR was evaluated by cyclic voltammetry measurements. ORR polarization curves, combined with the rotating disk technique, indicated a predominant four-electrons reduction path, especially for crystalline samples. The effect of the structural characteristics of the investigated materials on the catalytic activity was analyzed in details by electrochemical impedance spectroscopy. The catalytic performance of the crystalline NTs is only slightly lower with respect to the reference material for fuel cell applications, namely platinum, but is in line with other cost-effective catalysts recently proposed in the literature. However, if compared to the larger part of these low-cost catalysts, anodically-grown TiO{sub 2} NTs are characterized by a synthesis route which is highly reproducible and easily up-scalable.

Synchrotron/crystal sample preparation

Science.gov (United States)

Johnson, R. Barry

1993-01-01

The Center for Applied Optics (CAO) of the University of Alabama in Huntsville (UAH) prepared this final report entitled 'Synchrotron/Crystal Sample Preparation' in completion of contract NAS8-38609, Delivery Order No. 53. Hughes Danbury Optical Systems (HDOS) is manufacturing the Advanced X-ray Astrophysics Facility (AXAF) mirrors. These thin-walled, grazing incidence, Wolter Type-1 mirrors, varying in diameter from 1.2 to 0.68 meters, must be ground and polished using state-of-the-art techniques in order to prevent undue stress due to damage or the presence of crystals and inclusions. The effect of crystals on the polishing and grinding process must also be understood. This involves coating special samples of Zerodur and measuring the reflectivity of the coatings in a synchrotron system. In order to gain the understanding needed on the effect of the Zerodur crystals by the grinding and polishing process, UAH prepared glass samples by cutting, grinding, etching, and polishing as required to meet specifications for witness bars for synchrotron measurements and for investigations of crystals embedded in Zerodur. UAH then characterized these samples for subsurface damage and surface roughness and figure.

Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method

Science.gov (United States)

He, Nuotian; Tang, Huili; Liu, Bo; Zhu, Zhichao; Li, Qiu; Guo, Chao; Gu, Mu; Xu, Jun; Liu, Jinliang; Xu, Mengxuan; Chen, Liang; Ouyang, Xiaoping

2018-04-01

In this investigation, β-Ga2O3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, β-Ga2O3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production.

Surface structures of normal paraffins and cyclohexane monolayers and thin crystals grown on the (111) crystal face of platinum. A low-energy electron diffraction study

International Nuclear Information System (INIS)

Firment, L.E.; Somorjai, G.A.

1977-01-01

The surfaces of the normal paraffins (C 3 --C 8 ) and cyclohexane have been studied using low-energy electron diffraction (LEED). The samples were prepared by vapor deposition on the (111) face of a platinum single crystal in ultrahigh vacuum, and were studied both as thick films and as adsorbed monolayers. These molecules form ordered monolayers on the clean metal surface in the temperature range 100--220 K and at a vapor flux corresponding to 10 -7 Torr. In the adsorbed monolayers of the normal paraffins (C 4 --C 8 ), the molecules lie with their chain axes parallel to the Pt surface and Pt[110]. The paraffin monolayer structures undergo order--disorder transitions as a function of temperature. Multilayers condensed upon the ordered monolayers maintained the same orientation and packing as found in the monolayers. The surface structures of the growing organic crystals do not corresond to planes in their reported bulk crystal structures and are evidence for epitaxial growth of pseudomorphic crystal forms. Multilayers of n-octane and n-heptane condensed upon disordered monolayers have also grown with the (001) plane of the triclinic bulk crystal structures parallel to the surface. n-Butane has three monolayer structures on Pt(111) and one of the three is maintained during growth of the crystal. Cyclohexane forms an ordered monolayer, upon which a multilayer of cyclohexane grows exhibiting the (001) surface orientation of the monoclinic bulk crystal structure. Surface structures of saturated hydrocarbons are found to be very susceptible to electron beam induced damage. Surface charging interferes with LEED only at sample thicknesses greater than 200 A

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Characterization of large cadmium zinc telluride crystals grown by traveling heater method

DEFF Research Database (Denmark)

Chen, H.; Awadalla, S.A.; Iniewski, K.

2008-01-01

The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

International Nuclear Information System (INIS)

Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

2016-01-01

High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

The Crystal structure of InAs nanorods grown onto Si[111] substrate

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2011-07-01

Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

Dramatic Improvement of Crystal Quality for Low-temperature-grown Rabbit Muscle Aldolase

Energy Technology Data Exchange (ETDEWEB)

Park, H.; Rangarajan, E; Sygusch, J; Izard, T

2010-01-01

Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA-LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 {angstrom} Bragg spacing and structure determination. It was concluded that the improvement of crystal quality as indicated by the higher resolution of the new RMA-LC4 complex crystals was a consequence of the introduction of new lattice contacts at lower temperature. The lattice contacts corresponded to an increased number of interactions between high-entropy side chains that mitigate the lattice strain incurred upon cryocooling and accompanying mosaic spread increases. The thermodynamically unfavorable immobilization of high-entropy side chains used in lattice formation was compensated by an entropic increase in the bulk-solvent content owing to the greater solvent content of the crystal lattice.

Dramatic improvement of crystal quality for low-temperature-grown rabbit muscle aldolase.

Science.gov (United States)

Park, Hajeung; Rangarajan, Erumbi S; Sygusch, Jurgen; Izard, Tina

2010-05-01

Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA-LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 A Bragg spacing and structure determination. It was concluded that the improvement of crystal quality as indicated by the higher resolution of the new RMA-LC4 complex crystals was a consequence of the introduction of new lattice contacts at lower temperature. The lattice contacts corresponded to an increased number of interactions between high-entropy side chains that mitigate the lattice strain incurred upon cryocooling and accompanying mosaic spread increases. The thermodynamically unfavorable immobilization of high-entropy side chains used in lattice formation was compensated by an entropic increase in the bulk-solvent content owing to the greater solvent content of the crystal lattice.

Dramatic improvement of crystal quality for low-­temperature-grown rabbit muscle aldolase

OpenAIRE

Park, HaJeung; Rangarajan, Erumbi S.; Sygusch, Jurgen; Izard, Tina

2010-01-01

Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination.

Study of optical properties of bulk GaN crystals grown by HVPE

Energy Technology Data Exchange (ETDEWEB)

Gu, Hong; Ren, Guoqiang; Zhou, Taofei; Tian, Feifei; Xu, Yu; Zhang, Yumin; Wang, Mingyue; Zhang, Zhiqiang [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Demin [Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Wang, Jianfeng [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2016-07-25

We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal grown using hydride vapor phase epitaxy. The high crystalline quality of the samples was evaluated using cathodoluminescence measurements, and the dislocation density ranged from 2.4 × 10{sup 6} to 2.3 × 10{sup 5} cm{sup −2}. The impurity concentration was determined using secondary-ion mass spectroscopy, and photoluminescence (PL) measurements were conducted in the range of 3–300 K. We did not find a correlation between the O or C impurities and the weak yellow luminescence (YL) band. As the dislocation density decreased, the intensity of the band edge emission increased and that of the YL band decreased. A competition between the two-electron satellite lines correlated to Si and the YL band was also observed in the low-temperature PL spectra, which demonstrated that the Si impurity also plays an important role in the weak YL band of these GaN samples. These results indicate that the Si donors around the dislocations, as reasonable sources of shallow donors, will recombine with possible deep acceptors and finally respond with the YL. - Highlights: • The investigated samples were sliced from the same bulk crystal. • No correlation between the O or C impurities and the weak YL band is observed. • A well-regulated relationship between the YL band and the dislocations is found. • A competition between the TES-Si lines and the YL band is discussed. • The dislocations trapping Si impurity is suggested to be responsible for YL band.

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

International Nuclear Information System (INIS)

Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

2012-01-01

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

Properties of melt-grown single crystals of 'YB/sub 68/'

Energy Technology Data Exchange (ETDEWEB)

Slack, G A; Oliver, D W; Brower, G D; Young, J D [General Electric Co., Schenectady, N.Y. (USA). Research and Development Center

1977-01-01

Single crystals of yttrium boride YB/sub n/ with n = 61 +- 3 were grown from the melt. Precision density and lattice parameter measurements indicate a congruent melting point at n = 61.7 and a stoichiometric composition at n = 68. Measurements of elastic constants, acoustic attenuation, electrical resistivity and optical absorption are presented. High resolution transmission electron microscopy reveals a complex crystal structure similar to that found by using X-rays. A comparison of the properties of YB/sub n/ with those of ..beta..-boron show that there are many similarities.

Vickers microhardness studies on solution-grown single crystals of potassium boro-succinate

Science.gov (United States)

Lakshmipriya, M.; Rajan Babu, D.; Ezhil Vizhi, R.

2015-02-01

The semiorganic crystals of potassium boro-succinate (KBS) were grown by slow evaporation method. KBS crystallizes in monoclinic system which was confirmed by powder XRD analysis. Vickers microhardness study has been carried out over a load range of 25-100 g. The Vickers hardness numbers (Hv) of the material increases as the load increases so the material is suitable for device fabrication. The Meyer index 'n' is estimated to be greater than 1.6, the crystal system belongs to the soft material category. The elastic stiffness coefficient, c11, has also been calculated using Wooster's empirical relation from the hardness data. The fracture toughness values 'Kc', determined from measurements of crack lengths, were estimated to be 0.15166 MN/m3/2. The brittleness indices 'Bi' were estimated as 276 m-1/2.

Complex impedance spectroscopy of alkali impurities in as-grown, irradiated and annealed quartz

International Nuclear Information System (INIS)

Devautour-Vinot, S.; Cambon, O.; Prud'homme, N.; Giuntini, J. C.; Boy, J.-J.; Cibiel, G.

2007-01-01

This work compares the dielectric relaxation properties of different crystalline quartz materials, according to their source (natural or synthetics). It is shown that these relaxation properties are due to a hopping process of alkaline (Li + , Na + , and K + ) impurities located near [Al-O 4 ] 5- tetrahedra. A detailed analysis, in terms of the distribution function of the dielectric loss peak, allowed us to perfectly distinguish the different types of as-grown quartz. We show that (i) the natural quartz has less stable M + charge carriers than the synthetic materials and that (ii) the homogeneity of the M + trapping sites, created by the [Al-O 4 ] 5- tetrahedra, strongly depends on the crystal growth conditions. These features were then studied using quartz samples with different treatment conditions: as-grown, irradiated, or annealed at high temperature. We propose that the irradiation greatly facilitates the M + relaxation, by creating additional low energy M + hosting sites, whose number depends on the source of the quartz crystals. We also show that for 100 krad irradiation, the saturation state of the defects is already reached for all the materials under consideration. Finally, we propose that the irradiation followed by annealing at 450 deg. C improves the M + stability and homogeneity in quartz materials, compared with the as-grown materials, this trend being much more relevant for the natural than for the synthetic quartz

Growth, and magnetic study of Sm0.4Er0.6FeO3 single crystal grown by optical floating zone technique

Science.gov (United States)

Wu, Anhua; Zhao, Xiangyang; Man, Peiwen; Su, Liangbi; Kalashnikova, A. M.; Pisarev, R. V.

2018-03-01

Sm0.4Er0.6FeO3 single crystals were successfully grown by optical floating zone method; high quality samples with various orientations were manufactured. Based on these samples, Magnetic property of Sm0.4Er0.6FeO3 single crystals were investigated systemically by means of the temperature dependence of magnetization. It indicated that compositional variations not only alter the spin reorientation temperature, but also the compensation temperature of the orthoferrites. Unlike single rare earth orthoferrites, the reversal transition temperature point of Sm0.4Er0.6FeO3 increases as magnetic field increases, which is positive for designing novel spin switching or magnetic sensor device.

Spectral response of THM grown CdZnTe crystals

DEFF Research Database (Denmark)

Chen, H.; Awadalla, S.A.; Harris, F.

2008-01-01

The spectral response of several crystals grown by the Traveling Heater Method (THM) were investigated. An energy resolution of 0.98% for a Pseudo Frisch-Grid of 4 × 4 × 9 mm3 and 2.1% FWHM for a coplanar-grid of size 11 × 11 × 5 mm3 were measured using 137Cs-662 keV. In addition a 4% FWHM at 122...

GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

Energy Technology Data Exchange (ETDEWEB)

Ortiz Vazquez, F E; Mishurnyi, V A; Gorbatchev, A Yu; De Anda, F [Universidad Autonoma de San Luis Potosi, Instituto de Investigation en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico); Elyukhin, V A, E-mail: fcoe_ov@prodigy.net.m, E-mail: andre@cactus.iico.uaslp.m [CINVESTAV-IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico D.F., CP 07360 (Mexico)

2009-05-01

The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown Ga{sub x}In{sub 1-z}As QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the Ga{sub x}In{sub -x} As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

Science.gov (United States)

Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Defects in Czochralski-grown silicon crystals investigated by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

1994-10-01

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

Microhardness studies on as-grown (111) faces of some alkaline earth nitrates

International Nuclear Information System (INIS)

Shekar, P.V.R.; Nagaraju, D.; Ganesh, V.; Rao, K.K.

2009-01-01

Single crystals of Sr(NO 3 ) 2 , Ba(NO 3 ) 2 and Pb(NO 3 ) 2 are grown from their aqueous solutions at a constant temperature of 35 C by slow evaporation technique. Crystals of size 8 to 10 mm along one edge are obtained in a period of 10 days. Chemical etching technique has been employed to study the dislocations in these crystals. The dislocations are randomly distributed and the dislocation density is about 10 4 to 10 5 /cm 2 . Microhardness studies are made on as-grown (111) faces of these crystals upto a load of 100 g. The hardness of the crystals increases with an increase in load and thereafter it becomes independent of the applied load. These results are discussed on the basis of reverse indentation size effect. Meyer index number n for these crystals is estimated at both low and high load regions. An analysis of hardness data of these crystals as well as some other cubic crystals like alums and alkali halates are discussed using Gilman-Chin parameter H v /C 44 , where H v is the microhardness and C 44 is the shear constant. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Science.gov (United States)

Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

2017-12-01

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

Dramatic improvement of crystal quality for low-­temperature-grown rabbit muscle aldolase

Science.gov (United States)

Park, HaJeung; Rangarajan, Erumbi S.; Sygusch, Jurgen; Izard, Tina

2010-01-01

Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination. It was concluded that the improvement of crystal quality as indicated by the higher resolution of the new RMA–LC4 complex crystals was a consequence of the introduction of new lattice contacts at lower temperature. The lattice contacts corresponded to an increased number of interactions between high-entropy side chains that mitigate the lattice strain incurred upon cryocooling and accompanying mosaic spread increases. The thermodynamically unfavorable immobilization of high-entropy side chains used in lattice formation was compensated by an entropic increase in the bulk-solvent content owing to the greater solvent content of the crystal lattice. PMID:20445268

Effect of indium and antimony doping in SnS single crystals

Energy Technology Data Exchange (ETDEWEB)

Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

2015-03-15

Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

2015-08-28

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

Annealing as grown large volume CZT single crystals for increased spectral resolution

International Nuclear Information System (INIS)

Li, Longxia

2008-01-01

The spectroscopic performance of current large-volume Cadmium 10% Zinc Telluride, Cd 0.9 Zn 0.1 Te, (CZT) detectors is impaired by cumulative effect of tellurium precipitates (secondary phases) presented in CZT single-crystal grown by low-pressure Bridgman techniques(1). This statistical effect may limit the energy resolution of large-volume CZT detectors (typically 2-5% at 662 keV for 12-mm thick devices). The stochastic nature of the interaction prevents the use of any electronic or digital charge correction techniques without a significant reduction in the detector efficiency. This volume constraint hampers the utility of CZT since the detectors are inefficient at detecting photons >1MeV and/or in low fluency situations. During the project, seven runs CZT ingots have been grown, in these ingots the indium dopant concentrations have been changed in the range between 0.5ppm to 6ppm. The I-R mapping imaging method has been employed to study the Te-precipitates. The Teprecipitates in as-grown CZT wafers, and after annealing wafers have been systematically studied by using I-R mapping system (home installed, resolution of 1.5 (micro)m). We employed our I-R standard annealing CZT (Zn=4%) procedure or two-steps annealing into radiation CZT (Zn=10%), we achieved the 'non'-Te precipitates (size 10 9-10 (Omega)-cm. We believe that the Te-precipitates are the p-type defects, its reducing number causes the CZT became n+-type, therefore we varied or reduced the indium dapant concentration during the growth and changed the Te-precipitates size and density by using different Cd-temperature and different annealing procedures. We have made the comparisons among Te-precipitates size, density and Indium dopant concentrations, and we found that the CZT with smaller size of Te-precipitates is suitable for radiation uses but non-Te precipitates is impossible to be used in the radiation detectors, because the CZT would became un-dopant or 'intrinsic' with non radiation affection (we

Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi{sub 2}Te{sub 3}) single crystals for thermoelectric applications

Energy Technology Data Exchange (ETDEWEB)

Krishna, Anuj [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Singh, Budhendra [TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro (Portugal); Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Maurya, K.K. [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

2016-03-07

High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi{sub 2}Te{sub 3}) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

International Nuclear Information System (INIS)

Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

1998-01-01

Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

Energy Technology Data Exchange (ETDEWEB)

Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

Crystal growth and characterization of new semiorganic nonlinear optical single crystals

Energy Technology Data Exchange (ETDEWEB)

Kulshrestha, Shobha, E-mail: shobha011986@gmail.com; Shrivastava, A. K., E-mail: ashwaniaks@rediffmail.com [School of Studies in Physics, Jiwaji University Gwalior (M.P.) – 474 011 (India)

2016-05-06

An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40–45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm{sup 3}, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.

Domain structures of LiNbO3 crystals grown by a floating zone technique

International Nuclear Information System (INIS)

Kawakami, Shoji; Ishii, Eiichi; Tsuzuki, Akihiro; Sekiya, Tadashi; Torii, Yasuyoshi; Takahashi, Akio.

1986-01-01

LiNbO 3 single crystals were grown from the congruently melting composition by a floating zone technique. It was confirmed by etching that the single domain crystals were produced without applying any external electric field. When annealed above the Curie temperature, antiparallel domain appeared in the form of annual rings. (author)

Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping

Science.gov (United States)

Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li

2018-03-01

Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.

Studies on the growth aspects, structural, thermal, dielectric and third order nonlinear optical properties of solution grown 4-methylpyridinium p-nitrophenolate single crystal

Science.gov (United States)

Devi, S. Reena; Kalaiyarasi, S.; Zahid, I. MD.; Kumar, R. Mohan

2016-11-01

An ionic organic optical crystal of 4-methylpyridinium p-nitrophenolate was grown from methanol by slow evaporation method at ambient temperature. Powder and single crystal X-ray diffraction studies revealed the crystal system and its crystalline perfection. The rocking curve recorded from HRXRD study confirmed the crystal quality. FTIR spectral analysis confirmed the functional groups present in the title compound. UV-visible spectral study revealed the optical window and band gap of grown crystal. The thermal, electrical and surface laser damage threshold properties of harvested crystal were examined by using TGA/DTA, LCR/Impedance Analyzer and Nd:YAG laser system respectively. The third order nonlinear optical property of grown crystal was elucidated by Z-scan technique.

Sources of optical distortion in rapidly grown crystals of KH2PO4

International Nuclear Information System (INIS)

De Yoreo, J.J.; Zaitseva, N.P.; Woods, B.W.; Land, T.A.; Rek, Z.U.

1995-01-01

We report results of x-ray topographic and optical measurements on KH 2 PO 4 crystals grown at rates of 5 to 30mm/day. We show that optical distortion in these crystals is caused primarily by 3 sources: dislocations, differences in composition between adjacent growth sectors of the crystal, and differences in composition between adjacent sectors of vicinal growth hillocks within a single growth sector of the crystal. We find that the compositional heterogeneities cause spatial variations in the refractive index and induced distortion of the transmitted wave front while large groups of dislocations are responsible for strain induced birefringence which leads to beam depolarization

Ce-doped LuAG single-crystal fibers grown from the melt for high-energy physics

CERN Document Server

Xu, X; Moretti, F; Pauwels, K; Lecoq, P; Auffray, E; Dujardin, C

2014-01-01

Under a stationary stable regime undoped and Ce-doped LuAG (Lu3Al5O12) single-crystal fibers were grown by a micro-pulling-down technique. The meniscus length corresponding to the equilibrium state was <200 mu m. Fluctuations in the fiber composition and pulling rate were found to have a significant effect on the properties of the fibers grown. A great improvement in the performance was found in samples containing low Ce concentrations (<= 0.1 at.\\%) and produced using pulling rates <0.5 mm min(-1). Under such conditions a good lateral surface fiber quality was obtained and light propagation was significantly improved. Conversely, a high Ce concentration and a high pulling rate resulted in a strong degradation of the fiber surface quality causing defects to appear and a decrease in light output. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Preventing Crystal Agglomeration of Pharmaceutical Crystals Using Temperature Cycling and a Novel Membrane Crystallization Procedure for Seed Crystal Generation

Directory of Open Access Journals (Sweden)

Elena Simone

2018-01-01

Full Text Available In this work, a novel membrane crystallization system was used to crystallize micro-sized seeds of piroxicam monohydrate by reverse antisolvent addition. Membrane crystallization seeds were compared with seeds produced by conventional antisolvent addition and polymorphic transformation of a fine powdered sample of piroxicam form I in water. The membrane crystallization process allowed for a consistent production of pure monohydrate crystals with narrow size distribution and without significant agglomeration. The seeds were grown in 350 g of 20:80 w/w acetone-water mixture. Different seeding loads were tested and temperature cycling was applied in order to avoid agglomeration of the growing crystals during the process. Focused beam reflectance measurement (FBRM; and particle vision and measurement (PVM were used to monitor crystal growth; nucleation and agglomeration during the seeded experiments. Furthermore; Raman spectroscopy was used to monitor solute concentration and estimate the overall yield of the process. Membrane crystallization was proved to be the most convenient and consistent method to produce seeds of highly agglomerating compounds; which can be grown via cooling crystallization and temperature cycling.

Determination of intrinsic polarization for K{sub 2}ZnCl{sub 4} single crystal grown by Czochralski technique for ferroelectric applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sonu [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Ray, Geeta [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Physics Department, Miranda House, University of Delhi, Delhi-7 (India); Sinha, Nidhi [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi-7 (India); Kumar, Binay, E-mail: b3kumar69@yahoo.co.in [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India)

2017-04-01

Large sized single crystal of K{sub 2}ZnCl{sub 4} (KZC) was grown by Czochralski (Cz) technique. Structural parameters of KZC were determined by Single crystal X-ray diffraction (SCXRD). From DSC analysis and temperature dependent dielectric measurement, KZC crystal was found to show Curie phase transition at 151 °C. TG/DTA confirmed the melting point that was found to be 443 °C. The value of piezoelectric charge coefficient (d{sub 33}) for KZC crystal was found to be 32 pC/N demonstrating their applicability in transducers and piezoelectric devices. Ferroelectric P-E loop for the grown crystal was traced at room temperature and the intrinsic polarization obtained by PUND measurement was found to be 0.1398 μC/cm{sup 2} indicating its applicability in switching devices. The energy band gap for KZC single crystal was found to be 6.13 eV. Vickers micro-hardness test revealed soft nature of KZC single crystals. - Highlights: • Large sized K{sub 2}ZnCl{sub 4} (KZC) single crystal was grown by Czochralski technique. • It possesses high Curie temperature as 151 °C. • d{sub 33} coefficient was found to be 32 pC/N. • Intrinsic polarization measured by PUND. • Its direct band gap energy was calculated to be 6.13 eV.

X-ray diffraction in laser-irradiated epsomite crystals grown in presence of borax

International Nuclear Information System (INIS)

Zaitseva, E.V.; Portnov, V.N.; Faddeev, M.A.; Chuprunov, E.V.

1997-01-01

Relative changes in the intensities ΔI/I of the (220) and (440) X-ray diffraction reflection during laser irradiation of epsomite (MgSO 2 ·7H 2 O) crystals grown from an aqueous solution in the presence of borax (Na 2 B 4 O 7 ·10H 2 O) were measured using the CoK α , CuK α , MoK α radiations. The intensities measured depend on the real crystal structure dependent on the borax content in the solution. The dependence of ΔI/I is studied as a function of borax in the solution and X-ray-radiation wavelength

X-ray Topographic Investigations of Domain Structure in Czochralski Grown PrxLa1-xAlO3 Crystals

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.; Malinowska, A.; Turczynski, S.; Pawlak, D.A.; Lukasiewicz, T.; Lefeld-Sosnowska, M.; Graeff, W.

2010-01-01

In the present paper X-ray diffraction topographic techniques were applied to a number of samples cut from Czochralski grown Pr x La 1-x AlO 3 crystals with different ratio of praseodymium and lanthanum. Conventional and synchrotron X-ray topographic investigations revealed differently developed domain structures dependent on the composition of mixed praseodymium lanthanum aluminium perovskites. Some large mosaic blocks were observed together with the domains. In the best crystals, X-ray topographs revealed striation fringes and individual dislocations inside large domains. Synchrotron topographs allowed us to indicate that the domains correspond to three different crystallographic planes, and to evaluate the lattice misorientation between domains in the range of 20-50 arc min (authors)

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.

Science.gov (United States)

Huo, Qin; Shao, Yongliang; Wu, Yongzhong; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

2018-02-16

In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al 2 O 3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al 2 O 3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.

Single crystal diamond detectors grown by chemical vapor deposition

International Nuclear Information System (INIS)

Tuve, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M.G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M.E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

2007-01-01

The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma 'Tor Vergata' University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12 C ions produced by 15MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (100) HPHT single crystal substrate. A detector 110μm thick was tested under α-particles and under 14MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α 0 ) 9 Be12 reaction peak with an energy spread of 0.5MeV for 14.8MeV neutrons and 0.3MeV for 14.1MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Science.gov (United States)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Energy Technology Data Exchange (ETDEWEB)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

International Nuclear Information System (INIS)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Investigation of inorganic nonlinear optical potassium penta borate tetra hydrate (PPBTH) single crystals grown by slow evaporation method

Science.gov (United States)

Arivuselvi, R.; Babu, P. Ramesh

2018-03-01

Borates family crystals were plays vital role in the field of non linear optics (NLO) due to needs of wide range of applications. In this report, NLO crystals (potassium penta borate tetra hydrate (KB5H8O12) are grown by slow evaporation method at room temperature (28° C) and studied their physical properties. The harvested single crystals are transparent with the dimension of 12 × 10 × 6 mm3 and colourless. X-ray diffraction of single crystals reveals that the grown crystal belongs to orthorhombic system with non-centrosymmetric space group Pba2. All the absorbed functional groups are present in the order of inorganic compounds expect 1688 cm-1 because of water (Osbnd H sbnd O blending) molecule present in the pristine. Crystals show transparent in the entire visible region with 5.9 eV optical band gap and also it shows excellence in both second and third order nonlinear optical properties. Crystals can withstand upto 154 °C without any phase changes which is observed using thermal (TGA/DTA) analysis.

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

Science.gov (United States)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

Science.gov (United States)

Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

2014-05-01

A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

Thermoluminescence kinetic features of Lithium Iodide (LiI) single crystal grown by vertical Bridgman technique

Science.gov (United States)

Daniel, D. Joseph; Kim, H. J.; Kim, Sunghwan; Khan, Sajid

2017-08-01

Single crystal of pure Lithium Iodide (LiI) has been grown from melt by using the vertical Bridgman technique. Thermoluminescence (TL) Measurements were carried out at 1 K/s following X-ray irradiation. The TL glow curve consists of a dominant peak at (peak-maximum Tm) 393 K and one low temperature peak of weaker intensity at 343 K. The order of kinetics (b), activation energy (E), and the frequency factor (S) for a prominent TL glow peak observed around 393 K for LiI crystals are reported for the first time. The peak shape analysis of the glow peak indicates the kinetics to be of the first order. The value of E is calculated using various standard methods such as initial rise (IR), whole glow peak (WGP), peak shape (PS), computerized glow curve deconvolution (CGCD) and Variable Heating rate (VHR) methods. An average value of 1.06 eV is obtained in this case. In order to validate the obtained parameters, numerically integrated TL glow curve has been generated using experimentally determined kinetic parameters. The effective atomic number (Zeff) for this material was determined and found to be 52. X-ray induced emission spectra of pure LiI single crystal are studied at room temperature and it is found that the sample exhibit sharp emission at 457 nm and broad emission at 650 nm.

Process development and characterization of centrosymmetric semiorganic nonlinear optical crystal: 4-dimethylaminopyridine potassium chloride

Science.gov (United States)

Johnson, J.; Srineevasan, R.; Sivavishnu, D.

2018-06-01

Centrosymmetric semiorganic crystal 4-dimethylaminopyridine potassium chloride (4-DMAPKC) has been grown successfully by using slow evaporation solution growth technique. Powder x-ray diffraction shows the 4-DMAPKC crystal has good crystalline nature. Single crystal XRD shows that the grown 4-DMAPKC is cubic crystal system with cell parameters a = 3.09 Å, b = 3.09 Å, c = 3.09 Å. Investigation has been carried out to assign the Vibrational frequencies of the grown crystal by FTIR spectral studies. UVsbnd Visible NIR optical absorption spectral studies in the range of 200-1100 nm shows low absorption in UVsbnd Visible region with lower cutoff wave length at 261 nm and optical band gap energy was found as Eg = 5.52 eV. Optically transmittance spectral shows 4-DMAPKC crystal is very good transparency in UV-Visible NIR region. Thermogravimetry and differential thermal (TG-DTA) analysis were carried out. Dielectric studies of as grown crystal sample exhibit low dielectric constant and loss at higher frequencies and attests the nonlinear optical activity. Micro hardness studies of as grown crystal were discussed. Second harmonic generation (SHG) efficiency of the 4-DMAPKC is 0.69 times as that of KDP.

Crystal structure and properties of tetragonal EuAg4In8 grown by metal flux technique

International Nuclear Information System (INIS)

Subbarao, Udumula; Sarkar, Sumanta; Peter, Sebastian C.

2015-01-01

The compound EuAg 4 In 8 has been obtained as single crystals in high yield from reactions run in liquid indium. X-ray diffraction on single crystals suggests that EuAg 4 In 8 crystallizes in the CeMn 4 Al 8 structure type, tetragonal space group I4/mmm with lattice constants a=b=9.7937(2) Å and c=5.7492(2) Å. Crystal structure of EuAg 4 In 8 is composed of pseudo Frank–Kasper cages occupied by one europium atom in each ring, which are shared through the corner along the ab plane resulting in a three dimensional network. The magnetic susceptibility of EuAg 4 In 8 was measured in the temperature range 2–300 K, which obeyed Curie–Weiss law above 50 K. Magnetic moment value calculated from the fitting indicates the presence of divalent europium, which was confirmed by X-ray absorption near edge spectroscopy. Electrical resistivity measurements suggest that EuAg 4 In 8 is metallic in nature with a probable Fermi liquid behavior at low temperature. - Graphical abstract: The tetragonal EuAg 4 In 8 has been grown as single crystals from reactions run in liquid indium. Magnetic and XANES measurements suggest divalent nature of Eu and resistivity measurements suggest metallic nature. - Highlights: • EuAg 4 In 8 phase having tetragonal phase is grown by metal flux technique. • Magnetic and XANES measurements exhibit divalent nature of Eu in EuAg 4 In 8 . • Resistivity measurement suggests metallic nature and probable Fermi liquid behavior

Aggregation performance of CdO grains grown on surface of N silicon crystal

International Nuclear Information System (INIS)

Zhang Jizhong; Zhao Huan

2010-01-01

Four kinds of aggregation patterns of CdO grains were formed on the surface of N silicon substrate heated at 580 deg. C for 1 h in an evaporation-deposition device. They were ellipse-shaped or quasi-circular-shaped aggregate, long ribbon-shaped aggregate, long chain-shaped or long double-chain-shaped aggregate, and long ellipse-chain-shaped aggregate. These aggregates consisted of numerous grains or tiny crystals, and deposited on top of the CdO bush-like long crystal clusters grown earlier. They exhibited clearly spontaneous self-organization aggregation performance. Surface defects of the virgin N silicon crystal were analyzed, and mechanism of the self-organization aggregation was discussed with a defect induced aggregation (DIA) model.

N and Si Implantation Effect on Structural and Electrical Properties of Bridgman grown GaSe Single Crystal

International Nuclear Information System (INIS)

Karabulut, O.

2004-01-01

N and Si implantation to GaSe single crystals were carried out parallel to c-axis with ion beam of about 10 1 6 ions/cm 2 dose having energy values 30, 60 and 100 keV. Ion implantation modifications on Bridgman grown GaSe single crystals have been investigated by means of XRD, electrical conductivity, absorption and photoconductivity measurements. XRD measurements revealed that annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. It was observed that both N- and Siimplantation followed by annealing process decreased the resistivity values from 10 7 to 10 3 .-cm. The analysis of temperature dependent conductivity showed that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Absorption and spectral photoconductivity measurements showed that the band edge is shifted in the implanted sample. All these modifications were attributed to the structural modifications and continuous shallow trap levels introduced upon implantation and annealing

Growth, mechanical, and magnetic study of SmFeO{sub 3} single crystal grown by optical floating zone technique

Energy Technology Data Exchange (ETDEWEB)

Babu, P. Ramesh [Centre for Crystal Growth, VIT University, Vellore, Tamil Nadu (India); Bhaumik, Indranil [Crystal Growth Laboratory, Laser Materials Development and Devices Division, RRCAT, Indore (India); Ganesamoorthy, S. [Material Science Group, IGCAR, Kalpakkam, Tamil Nadu (India); Kalainathan, S., E-mail: kalainathan@yahoo.com [Centre for Crystal Growth, VIT University, Vellore, Tamil Nadu (India); Bhatt, R.; Karnal, A.K.; Gupta, P.K. [Crystal Growth Laboratory, Laser Materials Development and Devices Division, RRCAT, Indore (India)

2016-08-15

Single crystals of Samarium orthoferrite (SmFeO{sub 3}) have been grown by the optical floating zone technique. The growth parameters to yield good quality crystals are 5 mm/h for pulling and 30–40 rpm for rotation. The mechanical behavior of the grown crystal has been investigated. Rosette pattern has been observed around the indentation and the microhardness has been found to decreases non-linearly with the applied load. For load higher than 1.96 N there is a transition from palmqvist to median crack due to plastic deformation of the crystal. The hardness parameters like fracture toughness, brittleness index, and yield strength have also been calculated for palmqvist and median cracks occurring on the crystal surface. The magnetic investigations revealed that a magnetic transition in the range of 300–180 K. Above 180 K, the magnetization decreases as Sm and Fe sublattices have opposite spins. At high temperature, two anomalies are observed, one due to near spin reorientation (T{sub SR} = 480 K) and the other is AFM to paramagnetic transitions (T{sub N} = 670 K). The M–H curves exhibit a shape change with temperature due to the emergence and enlargement of multi-domain state of the SmFeO{sub 3} crystals. Bloch parameter (3.28 × 10{sup −5} K{sup −3/2}) has also been evaluated. - Highlights: • SmFeO{sub 3} single crystals have been grown by OFZ technique in air. • The microhardness has been found to decreases non-linearly with the applied load. • At 472 K, spin reorientation occurs in Fe sublattice. • The M–H curves exhibit a shape change with temperature due to the emergence and enlargement of multi-domain state. • Bloch 3/2-law holds good for SmFeO{sub 3} (B-parameter as 3.28 × 10{sup −5} K{sup −3/2}).

Electrical conductivity measurements on gel grown KDP crystals ...

Indian Academy of Sciences (India)

Unknown

reagent (AR) grade samples of the required chemicals. (KDP, urea and thiourea) along with double distilled ... flotation technique. As it was difficult to determine the impurity concen- tration in the crystal, no experiment was carried out to determine this. However, we followed an approximate method available in the literature ...

Crystal growth of YFe{sub 2}Ge{sub 2} and the dependence of its superconducting properties on sample preparation

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiasheng; Semeniuk, Konstantin; Reiss, Pascal; Brown, Philip; Grosche, Malte [Cavendish Lab., Cambridge (United Kingdom); Feng, Zhuo [London Centre of Nanotechnology, UCL, London (United Kingdom); Lampronti, Giulio [Cambridge Univ., Dept. of Earth Sciences, Cambridge (United Kingdom)

2016-07-01

The d-electron system YFe{sub 2}Ge{sub 2} exhibits an unusually high Sommerfeld ratio of specific heat capacity of C/T ∝ 100 mJ/(molK{sup 2}), signaling strong electronic correlations. Evidence of superconductivity has been reported in polycrystals and in flux-grown single crystals with residual resistance ratios (RRR) of the order of 50, but these samples show no thermodynamic signatures of a bulk superconducting transition. We find that by combining (i) a prereaction of YFe{sub 2}, (ii) careful control of nominal composition, and (iii) subsequent annealing procedures, the polycrystalline YFe{sub 2}Ge{sub 2} samples grown using a radio-frequency (RF) induction furnace can reach RRR values ∝ 200 with resistive superconducting transitions temperatures of around 1.85 K. This new generation of sample displays clear heat capacity anomalies as well as nearly 100% diamagnetic screening, confirming the bulk nature of its superconductivity. We present details of the sample preparation and characterization and discuss the correlation between nominal composition and superconductivity.

Diode-pumped laser with Yb:YAG single-crystal fiber grown by the micro-pulling down technique

Science.gov (United States)

Sangla, D.; Aubry, N.; Didierjean, J.; Perrodin, D.; Balembois, F.; Lebbou, K.; Brenier, A.; Georges, P.; Tillement, O.; Fourmigué, J.-M.

2009-02-01

Laser emission obtained from an Yb:YAG single-crystal fiber directly grown by the micro-pulling down technique is demonstrated for the first time. We achieved 11.2 W of continuous wave (CW) output power at 1031 nm for 55 W of incident pump power at 940 nm. In the Q-switched regime, we obtained pulses as short as 17 ns, for an average power of 2.3 W at 2 kHz corresponding to an energy of 1.15 mJ. In both cases, the M 2 factor was 2.5. This single-crystal fiber showed performance similar to a standard rod elaborated by the Czochralski method. The potential of Yb3+-doped single-crystal fibers is presented for scalable high-average and high-peak-power laser systems.

Cultivation and characterization of GaInSe2 crystals

International Nuclear Information System (INIS)

Panakhov, T.M.; Kafarova, D.M.

2013-01-01

This work is the first systematic study devoted to the growth of GaInSe 2 crystals and their characterization by experimental methods such as X-ray diffraction, electron microscopy transmission with high resolution, sample electron diffraction. By the method of photoelectron roentgen spectroscopy it was studied the chemical structure of the GaInSe 2 crystals and the microprobe analysis indicated that the individual crystals have an excess of gallium. GaInSe 2 crystals were grown by the Bridgman method. Samples were prepared as single crystals by the Bridgman method. Studies showed that the GaInSe 2 crystals are hexagonal ones

Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method

Science.gov (United States)

Hoffman, Tim

Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200microm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched 10B and 11B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. 10B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E2g mode. Crystals with enrichment of 99% 10B and >99% 11B were achieved, with corresponding Raman shift peaks at 1392.0 cm-1 and 1356.6 cm-1, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm-1 achieved, compared to 8.0 cm-1 for natural abundance samples. Defect selective etching was

Growth and characterizations of Ba2Ti2Fe2As4O single crystals

Directory of Open Access Journals (Sweden)

Yun-Lei Sun, Abduweli Ablimit, Jin-Ke Bao, Hao Jiang, Jie Zhou and Guang-Han Cao

2013-01-01

Full Text Available Single crystals of a new iron-based superconductor Ba2Ti2Fe2As4O have been grown successfully via a Ba2As3-flux method in a sealed evacuated quartz tube. Bulk superconductivity with Tc ~ 21.5 K was demonstrated in resistivity and magnetic susceptibility measurements after the as-grown crystals were annealed at 500 °C in vacuum for a week. X-ray diffraction patterns confirm that the annealed and the as-grown crystals possess the identical crystallographic structure of Ba2Ti2Fe2As4O. Energy-dispersive x-ray spectra indicate that partial Ti/Fe substitution exists in the [Fe2As2] layers and the annealing process redistributes the Ti within the Fe-plane. The ordered Fe-plane stabilized by annealing exhibits superconductivity with magnetic vortex pinned by Ti.

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

International Nuclear Information System (INIS)

Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

2010-01-01

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

Synthesis of porous CuInS2 crystals

International Nuclear Information System (INIS)

Akaki, Yoji; Matsubara, Takanori; Ohno, Yuki; Momiki, Takanori; Ide, Kazuki

2009-01-01

CuInS 2 crystals were grown from starting materials CuCl 2 .2H 2 O, InCl 3 .4H 2 O and thiourea with ethylene glycol solution, that were placed into a flask, heated, and refluxed for 1 hour. The diffraction peaks only from CuInS 2 phase appear for all the samples. The morphology of CuInS 2 crystal was porous, and the porous crystals exist in two kinds. One kind was flower-like crystals which complexly lack the flakes, another one was sphere-like crystals existed with a number of the poles. The sizes of sphere-like porous crystals were approximately 1.0 μm. The specific surface area of the samples grown at 180 C and 600 rpm estimated approximately 30 m 2 /g. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

2013-12-16

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

The α-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Prusa, Petr; Nikl, Martin; Mares, Jiri A.; Nitsch, Karel; Beitlerova, Alena; Kucera, Miroslav

2009-01-01

Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO-,BaO-, and MoO 3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5-10 μs shaping time, and energy resolution of these samples were measured under α-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

International Nuclear Information System (INIS)

Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

2014-01-01

A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

Energy Technology Data Exchange (ETDEWEB)

Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

2016-08-31

This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

Science.gov (United States)

Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

2017-08-17

We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

Structural, mechanical, electrical and optical properties of a new lithium boro phthalate NLO crystal synthesized by a slow evaporation method

Science.gov (United States)

Mohanraj, K.; Balasubramanian, D.; Jhansi, N.

2017-11-01

A new non-linear optical (NLO) single crystal of lithium boro phthalate (LiBP) was grown by slow solvent evaporation technique. The powder sample was subjected to powder X-ray diffraction (PXRD) to find its crystalline nature and the crystal structure of the grown crystal was determined using single crystal X-ray (SXRD) diffraction analysis. The Fourier Transform Infrared (FTIR) spectrum was recorded for grown crystal to identify the various functional groups present in the compound. The mechanical property of the LiBP single crystal was studied using Vickers microhardness tester. The dielectric constant and dielectric loss measurements were carried out for the grown crystal at various temperatures. The grown crystal was subjected to UV-Visible Spectral Studies to analyze the linear optical behavior of the grown crystal. The Kurtz-Perry Powder technique was employed to measure the Second Harmonic Generation efficiency of the grown crystal.

Scanning/friction force microscopy study of YBa2Cu3O7-δ single crystals grown in BaZrO3 crucibles

International Nuclear Information System (INIS)

Lang, H.P.; Jess, P.; Hubler, U.

1996-01-01

Very pure YBa 2 Cu 3 O 7-δ (YBCO) single crystals grown in BaZrO 3 crucibles are studied in the as-grown and the oxidized state by scanning force (SFM), friction force (FFM) and scanning tunneling microscopies (STM). The images show clean terraces with step-heights of one unit cell along YBCO(001), i.e. 1.2 nm. Only close to step edges is material contrast observed by FFM indicating traces of flux. Some crystal surfaces exhibit over-layer features, such as star-like, ribbon-like and checkerboard-like structures, which exhibit friction contrast implying the presence of different materials on the surface. Tunneling spectroscopy at 4-7 K in high vacuum reveals a superconducting energy gap of 2Δ ∼ 26 meV

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

Growth and dielectric, mechanical, thermal and etching studies of an organic nonlinear optical L-arginine trifluoroacetate (LATF) single crystal

International Nuclear Information System (INIS)

Arjunan, S.; Mohan Kumar, R.; Mohan, R.; Jayavel, R.

2008-01-01

L-arginine trifluoroacetate, an organic nonlinear optical material, has been synthesized from aqueous solution. Bulk single crystal of dimension 57 mm x 5 mm x 3 mm has been grown by temperature lowering technique. Powder X-ray diffraction studies confirmed the monoclinic structure of the grown L-arginine trifluoroacetate crystal. Linear optical property of the grown crystal has been studied by UV-vis spectrum. Dielectric response of the L-arginine trifluoroacetate crystal was analysed for different frequencies and temperatures in detail. Microhardness study on the sample reveals that the crystal possesses relatively higher hardness compared to many organic crystals. Thermal analyses confirmed that the L-arginine trifluoroacetate material is thermally stable upto 212 deg. C. The etching studies have been performed to assess the perfection of the L-arginine trifluoroacetate crystal. Kurtz powder second harmonic generation test confirms the nonlinear optical properties of the as-grown L-arginine trifluoroacetate crystal

Effects of post-annealing and cobalt co-doping on superconducting properties of (Ca,Pr)Fe{sub 2}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Okada, T., E-mail: 8781303601@mail.ecc.u-tokyo.ac.jp; Ogino, H.; Yakita, H.; Yamamoto, A.; Kishio, K.; Shimoyama, J.

2014-10-15

Highlights: • Post-annealing at 400 °C killed superconductivity for Co-free sample. • Pr,Co co-doped samples maintained superconductivity even after annealing. • Two-step superconducting transition was observed via magnetization measurement. • Bulk superconductivity of low-T{sub c} component was confirmed. • Superconducting volume fraction of high-T{sub c} component was always small. - Abstract: In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe{sub 2}As{sub 2} system, Pr doped and Pr,Co co-doped CaFe{sub 2}As{sub 2} single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with T{sub c1} = 25–42 K, and T{sub c2} < 16 K, suggesting that (Ca,RE)Fe{sub 2}As{sub 2} system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ∼400 °C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ∼400 °C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400 °C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below T{sub c2} and high J{sub c} values of 10{sup 4}–10{sup 5} A cm{sup −2} at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe{sub 2}As{sub 2} phase occurred below T{sub c2}. On the contrary, the superconducting volume fraction above T{sub c2} was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.

Growth, optical, ICP and thermal studies of nonlinear optical single crystal: Sodium acid phthalate (NaAP)

Science.gov (United States)

Mahadevan, M.; Arivanandhan, M.; Elangovan, K.; Anandan, P.; Ramachandran, K.

2017-07-01

Good quality single crystals of sodium acid phthalate (NaAP) were grown by slow evaporation technique. Single crystal X-ray diffraction study of the grown crystal reveals that the crystal belongs to orthorhombic system with space group B2ab. Fourier transform infrared spectrum confirms the presence of the functional groups of the grown material. Inductively coupled plasma emission spectroscopy analysis is used to confirm the presence of Na element in the sample. Thermal analysis of the NaAP crystal shows that the crystal is stable up to 140°C. Optical transmittance of the grown crystal was recorded in the wavelength range from 200 and 800 nm using UV-Vis-NIR spectrophotometer. The second harmonic generation of NaAP was analysed using Kurtz powder technique.

Effect of an external magnetic field on polytypism of CdI2 crystals grown from solutions

International Nuclear Information System (INIS)

Palosz, B.; Przedmojski, J.

1982-01-01

The effect of growth conditions on the polytypic structure of crystals of CdI 2 was analyzed for crystallization from solutions. Three solvents were used: H 2 O, 3 H 2 O + 1 C 2 H 5 OH and 1 H 2 O + 1 C 2 H 5 OH. Crystals were grown at two temperatures: 5 and 25 0 C with low and high growth rates; an external magnetic field of about 0.25 tesla was used. The effect of the above three parameters on the formation of the basic polytypes 2H and 4H and on the ordering of faults in disordered structures and in polytype cells was studied by X-ray analysis of crystal surfaces. Some distinct relations between the polytypic structure of crystals of CdI 2 and the magnetic field were found. (author)

Crystal growth, morphology, thermal and spectral studies of an organosulfur nonlinear optical bis(guanidinium) 5-sulfosalicylate (BG5SS) single crystals

Science.gov (United States)

Dhavamurthy, M.; Peramaiyan, G.; Babu, K. Syed Suresh; Mohan, R.

2015-04-01

Organosulfur nonlinear optical single crystals of orthorhombic bis(guanidinium) 5-sulfosalicylate (2CH6N3 +·C7H4O6S2-·H2O) with dimension 14 mm × 4 mm × 5 mm have been grown from methanol and water solvents in 1:1 ratio by the slow evaporation growth technique. The crystal structure and morphology of the crystals have been studied by single-crystal X-ray diffraction. FTIR spectroscopic studies were carried out to identify the functional groups and vibrational modes present in the grown crystals. The UV-Vis spectrum was studied to analyze the linear optical properties of the grown crystals. The thermal gravimetric analysis was conducted on the grown crystals, and the result revealed that the grown crystal is thermally stable up to 65 °C. The dielectric tensor components ɛ 11, ɛ 22 and ɛ 33 of BG5SS crystal were evaluated as a function of frequency at 40 °C. The surface laser damage threshold for the grown crystal was measured using Nd:YAG laser. Further, Vickers micro-hardness study was carried out to analyze the mechanical strength of the grown crystals for various loads.

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Science.gov (United States)

Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

1996-09-01

This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

Efficient Incorporation of Mg in Solution Grown GaN Crystals

Science.gov (United States)

2013-10-11

dispersed by a 1800 grooves/mm 0.85m double-grating spectrometer and detected by a UV -sensitive GaAs photomultiplier coupled to a computer-controlled... UV excitation at RT was attacked by the etching solution (which is indicative of the N-polar surface), as depicted in Figs. 2(a) and 2(b). This result...thorough spectrometric and optical spectro - scopic studies in combination with selective etching carried out on samples grown by the moderate-pressure

X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs[ anti 1 anti 1 anti 1]{sub B}

Energy Technology Data Exchange (ETDEWEB)

Bauer, Jens; Gottschalch, Volker; Wagner, Gerald [Universitaet Leipzig, Halbleiterchemie, Leipzig (Germany); Pietsch, Ullrich; Davydok, Anton; Biermanns, Andreas [Universitaet Siegen, Festkoerperphysik, Siegen (Germany); Grenzer, Joerg [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany)

2009-09-15

The heteroepitaxial growth process of InAs nanowires (NW) on GaAs[ anti 1 anti 1 anti 1]{sub B} substrate was investigated by X-ray grazing-incidence diffraction using synchrotron radiation. For crystal growth we applied the vapor-liquid-solid (VLS) growth mechanism via gold seeds. The general sample structure was extracted from various electron microscopic and X-ray diffraction experiments. We found a closed Ga{sub x}In{sub 1-x} As graduated alloy layer at the substrate to NW interface which was formed in the initial stage of VLS growth with a Au-Ga-In liquid alloy. With ongoing growth time a transition from this VLS layer growth to the conventional VLS NW growth was observed. The structural properties of both VLS grown crystal types were examined. Furthermore, we discuss the VLS layer growth process. (orig.)

Synthesis of porous CuInS{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Akaki, Yoji; Matsubara, Takanori; Ohno, Yuki; Momiki, Takanori; Ide, Kazuki [Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki (Japan)

2009-05-15

CuInS{sub 2} crystals were grown from starting materials CuCl{sub 2}.2H{sub 2}O, InCl{sub 3}.4H{sub 2}O and thiourea with ethylene glycol solution, that were placed into a flask, heated, and refluxed for 1 hour. The diffraction peaks only from CuInS{sub 2} phase appear for all the samples. The morphology of CuInS{sub 2} crystal was porous, and the porous crystals exist in two kinds. One kind was flower-like crystals which complexly lack the flakes, another one was sphere-like crystals existed with a number of the poles. The sizes of sphere-like porous crystals were approximately 1.0 {mu}m. The specific surface area of the samples grown at 180 C and 600 rpm estimated approximately 30 m{sup 2}/g. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Recurrent thermo-luminescence phenomenon in yttrium-aluminum garnet crystals

International Nuclear Information System (INIS)

Islamov, A.Kh.; Nuritdinov, I.; Esanov, Z.U.; Eshchanov, B.Kh.; Khayitov, I.A.

2014-01-01

Full text : The crystals of yttrium-aluminum garnet Y 2 Al 2 O 1 2 activated by cerium and praseodymium ions by their thermal and chemical durability as well as fast response are perspective scintillation materials. In this work the capture centres formed by action of the ionizing radiation on pure and doped by praseodymium and cerium crystals were investigated. The samples were grown using Chokhralsky method

RNi2B2C (R = Ho, Dy, Tb and Pr) single crystals grown by the cold copper crucible method

Science.gov (United States)

Durán, A.; Munoz, E.; Bernès, S.; Escudero, R.

2000-08-01

Single crystals of RNi2B2C (R = Ho, Dy, Tb, Pr) have been grown on cold copper crucibles in a high-frequency induction furnace. As a result, shiny metallic and brittle platelike single crystals were obtained. They were examined by x-ray and scanning electron microscopy with WDX/EDX for local composition analysis and show a very good crystallographic structure and compositions. Resistivity and dc magnetic measurements were performed to study superconducting and magnetic properties. Besides known electronic properties of the RNi2B2C family, we report for the first time results for PrNi2B2C single crystals successfully obtained by this technique.

Methodology optimization of the thallium bromide crystal preparation for application as a radiation detector

International Nuclear Information System (INIS)

Santos, Robinson Alves dos

2012-01-01

In this work, TlBr crystals have been purified and grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors. To evaluate the purification efficiency, studies on the impurity concentration decrease were performed after each growth, analyzing the trace impurities by inductively coupled plasma mass spectroscopy (ICP-MS). A significant decrease of the concentration of impurities in function of the purification number was observed. The grown crystals presented good crystalline quality according to the results of the x-ray diffraction analysis. To evaluate the crystals to be used as a semiconductor detector, measurements of the resistivity and the pulse height under 241 Am gamma rays were carried out. The radiation response was strongly dependent on the crystal purity. The Repeated Bridgman technique showed to be effective to reduce the concentration of impurities and to improve the TlBr crystal quality to be used as a radiation semiconductor detector. A compartmental model was proposed to fit the concentration/segregation of impurities in function of the Bridgman growth step number. This compartmental model is defined by differential equations and can be used to calculate the rate of migration of impurities. It proved to be a useful tool in predicting the number of Bridgman growth repetitions necessary to achieve the desired impurity concentration. The difference of the impurity migration rates between the crystals grown, using salts from different origins, was significant. Therefore, the choice of the starting salt should be performed experimentally, regardless of the statement nominal purity. (author)

A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz). Pt. I. Experiments and Results

Energy Technology Data Exchange (ETDEWEB)

Jacob, K.; Frank, C.; Neubert, M.; Rudolph, P. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Ulrici, W. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Paul-Drude-Inst. fuer Festkoerperelektronik, Berlin (Germany); Jurisch, M. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Freiberger Compound Materials GmbH, Freiberg (Germany); Korb, J. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); GTT Technologies, Freiberg (Germany)

2000-07-01

In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the present paper to clarify which of the relationships of LEC growth could be used for a carbon control in the VCz-method characterized by the application of an inner chamber made from graphite to avoid selective As evaporation. In detail this comprised a study of the influence of several growth parameters like the water content of the boric oxide, the composition of the working atmosphere, the gas flow, a titanium gettering and additions of gallium oxide. As a result, for the first time carbon concentrations down to {approx} 10{sup 14} cm{sup -3} were obtained in 3{sup ''} (75 mm) diameter VCz crystals. (orig.)

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

CERN Document Server

Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

Positron annihilation spectroscopic study of hydrothermal grown n-type zinc oxide single crystal

Energy Technology Data Exchange (ETDEWEB)

Hui, C.W.; Zhang, Z.D.; Zhou, T.J.; Ling, C.C.; Beling, C.D.; Fung, S. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Brauer, G.; Anwand, W.; Skorupa, W. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden (Germany)

2007-07-01

Positron lifetime and coincidence Doppler broadening spectroscopic (CDBS) measurements were carried out to study the defects in two hydrothermal (HT) grown ZnO single crystal samples (HT1 and HT2) obtained from two companies. Single component model could offer good fittings to the room temperature spectra of HT1 and HT2, with the positron lifetimes equal to 199 ps and 181 ps respectively. These two lifetime components were associated with saturated positron trapping into two V{sub Zn}-related defects with different microstructures. The positron lifetimes of HT1 was found to be temperature independent. For the HT2 sample, the positron lifetime remained unchanged with T>200 K and decreased with decreasing temperature as T<200 K. This could be explained by the presence of an additional positron trap having similar electronic environment to that of the delocalized state and competing in trapping positrons with the 181 ps component at low temperatures. Positron-electron autocorrelation function, which was the fingerprint of the annihilation site, was extracted from the CDBS spectrum. The obtained autocorrelation functions of HT1 and HT2 at room temperature, and HT2 at 50 K had features consistent with the above postulates that the 181 ps and the 199 ps components had distinct microstructures and the low temperature positron trap existed in HT2. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laser damage to production- and research-grade KDP crystals

International Nuclear Information System (INIS)

Rainer, F.; Atherton, L.J.; DeYoreo, J.J.

1992-10-01

We present the results of laser damage measurements conducted on potassium dihydrogen phosphate (KDP) and deuterated potassium dihydrogen phosphate (KD*P) crystals that were grown recently for both production and research applications by several sources. We have measured extrinsic damage thresholds that cover wavelengths from 1064 nm to 266 nm at pulse durations in the 3- to 10-ns regime. Many of the samples were extracted from boules grown specifically to yield large-area crystals, up to 32-cm square, for laser fusion applications. These crystals were the result of efforts, both by the Lawrence Livermore National Laboratory (LLNL) and commercial crystal-growth companies, to yield high-threshold KDP. In particular we have established that such crystals can reliably survive fluences exceeding 15 j/cm 2 at 355 nm and 20 j/cm 2 at 1064 nm when irradiated with 3-ns pulses. We present details of how bulk and surface damage to these crystals scale with pulse duration and wavelength as well as of morphological effects due to laser conditioning

Optical absorption in gel grown cadmium tartrate single crystals

International Nuclear Information System (INIS)

Arora, S K; Kothari, A J; Patel, R G; Chauha, K M; Chudasama, B N

2006-01-01

Single crystals of cadmium tartrate pentahydrate (CTP) have been grown by the famous gel technique. The slow and controlled reaction between Cd 2+ and (C 4 H 4 O 6 ) 2- ions in silica hydrogel results in formation of the insoluble product, CdC 4 H 4 O 6 .5H 2 O. Optical absorption spectra have been recorded in the range 200 to 2500 nm. Fundamental absorption edge for electronic transition has been analyzed. The direct allowed transition is found to be present in the region of relatively higher photon energy. Analysis of the segments of α 1/2 versus hν graph has been made to separate individual contribution of phonons. The phonons involved in the indirect transition are found to correspond to 335 and 420 cm -1 . Scattering of charge carriers in the lattice is found due to acoustic phonons

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

Energy Technology Data Exchange (ETDEWEB)

Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

2014-04-14

A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

The plug-based nanovolume Microcapillary Protein Crystallization System (MPCS)

International Nuclear Information System (INIS)

Gerdts, Cory J.; Elliott, Mark; Lovell, Scott; Mixon, Mark B.; Napuli, Alberto J.; Staker, Bart L.; Nollert, Peter; Stewart, Lance

2008-01-01

The Microcapillary Protein Crystallization System (MPCS) is a new protein-crystallization technology used to generate nanolitre-sized crystallization experiments for crystal screening and optimization. Using the MPCS, diffraction-ready crystals were grown in the plastic MPCS CrystalCard and were used to solve the structure of methionine-R-sulfoxide reductase. The Microcapillary Protein Crystallization System (MPCS) embodies a new semi-automated plug-based crystallization technology which enables nanolitre-volume screening of crystallization conditions in a plasticware format that allows crystals to be easily removed for traditional cryoprotection and X-ray diffraction data collection. Protein crystals grown in these plastic devices can be directly subjected to in situ X-ray diffraction studies. The MPCS integrates the formulation of crystallization cocktails with the preparation of the crystallization experiments. Within microfluidic Teflon tubing or the microfluidic circuitry of a plastic CrystalCard, ∼10–20 nl volume droplets are generated, each representing a microbatch-style crystallization experiment with a different chemical composition. The entire protein sample is utilized in crystallization experiments. Sparse-matrix screening and chemical gradient screening can be combined in one comprehensive ‘hybrid’ crystallization trial. The technology lends itself well to optimization by high-granularity gradient screening using optimization reagents such as precipitation agents, ligands or cryoprotectants

As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

International Nuclear Information System (INIS)

Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

2012-01-01

Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

Structural, spectroscopic and Thermal Studies of Potassium Di-hydrogen Citrate Crystal

Directory of Open Access Journals (Sweden)

N.D. Pandya

2017-04-01

Full Text Available Potassium dihydrogen citrate (KDC finds wide applications in food products. Pure potassium dihydrogen citrate crystal was grown by slow solvent evaporation technique at room temperature. Grown crystal exhibited needle like morphology. The powder XRD shows triclinic structure symmetry with lattice parameters a=11.820 Å, b=14.970 Å, c=9.442 Å with angles α = 91.60°, β = 93.35°, γ = 110°. The presence of various functional groups of grown crystal was confirmed by using FT-IR spectroscopy. The thermogram indicates the thermal stability of the sample up to 100oC and then decomposes slowly into oxide stage through two stages. The results are discussed here.

Growth and microtopographic study of CuInSe{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

2016-05-23

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

International Nuclear Information System (INIS)

Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

1988-01-01

A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ivanov, A.; Strokan, N.; Vasilev, V.; Markov, A.; Polyakov, A.; Gavrin, V.; Kozlova, Yu.; Veretenkin, E.; Bowles, T.J.

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p + -i-n + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E v +0.075 eV, presumably assigned to Ga antisite and its influence on the concentration of the ionized deep donor level EL2 +

Growth and optical studies of opal films as three-dimensional photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Comoretto, D.; Grassi, R.; Marabelli, F.; Andreani, L.C

2003-01-15

Three-dimensional artificial opals showing photonic crystals properties are grown by self-assembly of polystyrene nanospheres. Atomic force microscopy (AFM) images of opal surfaces show domains with regular triangular and squared packing of the spheres separated by cracks whose relative fraction depends on the sample quality. The energy position of an optical pseudo gap in transmittance spectra is observed by varying the angle of incidence and is accounted for by theoretical calculations of the photonic band structure based on a plane-wave expansion method.

Growth and optical studies of opal films as three-dimensional photonic crystals

International Nuclear Information System (INIS)

Comoretto, D.; Grassi, R.; Marabelli, F.; Andreani, L.C.

2003-01-01

Three-dimensional artificial opals showing photonic crystals properties are grown by self-assembly of polystyrene nanospheres. Atomic force microscopy (AFM) images of opal surfaces show domains with regular triangular and squared packing of the spheres separated by cracks whose relative fraction depends on the sample quality. The energy position of an optical pseudo gap in transmittance spectra is observed by varying the angle of incidence and is accounted for by theoretical calculations of the photonic band structure based on a plane-wave expansion method

Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

2013-01-01

0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

Investigations on critical parameters, growth, structural and spectral studies of beta-alaninium picrate (BAP) single crystals

International Nuclear Information System (INIS)

Shanthi, D; Selvarajan, P; Perumal, S

2014-01-01

Beta-alaninium picrate (BAP) salt has been synthesized and the solubility of the synthesized sample in double distilled water was determined at different temperatures. Solution stability was studied by observing the metastable zone width by employing the polythermal method. Induction period values for different supersaturation ratios at room temperature were determined based on the isothermal method. The nucleation parameters such as critical radius, critical free energy change, interfacial tension, and nucleation rate have been estimated for BAP salt on the basis of the classical nucleation theory. The lattice parameters of the grown BAP crystal were determined using the x-ray diffraction (XRD) technique. The reflection planes of the sample were confirmed by the powder XRD study and diffraction peaks were indexed. Fourier transform infrared spectroscopy and Fourier transform–Raman studies were used to confirm the presence of various functional groups in the BAP crystal. The nonlinear optical property of the grown crystal was studied using the Kurtz–Perry powder technique. UV–visible spectral studies were carried out to understand optical transparency and the type of band gap of the grown BAP crystal. (paper)

Growth of large size lithium niobate single crystals of high quality by tilting-mirror-type floating zone method

Energy Technology Data Exchange (ETDEWEB)

Sarker, Abdur Razzaque, E-mail: razzaque_ru2000@yahoo.com [Department of Physics, University of Rajshahi (Bangladesh)

2016-05-15

Large size high quality LiNbO{sub 3} single crystals were grown successfully by tilting-mirror-type floating zone (TMFZ) technique. The grown crystals were characterized by X-ray diffraction, etch pits density measurement, Impedance analysis, Vibrating sample magnetometry (VSM) and UV-Visible spectrometry. The effect of mirror tilting during growth on the structural, electrical, optical properties and defect density of the LiNbO{sub 3} crystals were investigated. It was found that the defect density in the crystals reduced for tilting the mirror in the TMFZ method. The chemical analysis revealed that the grown crystals were of high quality with uniform composition. The single crystals grown by TMFZ method contains no low-angle grain boundaries, indicating that they can be used for high efficiency optoelectronic devices. (author)

Structure and magnetic properties of flux grown single crystals of Co3-xFexSn2S2 shandites

Science.gov (United States)

Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

2016-01-01

We report a successful single crystal growth of the shandite-type half-metallic ferromagnet Co3Sn2S2, and its Fe-substituted compounds, Co3-xFexSn2S2, by employing the flux method. Although Fe3Sn2S2 is unstable phase, we found that using the self Sn flux enables us to obtain single phase crystals up to x=0.53. The chemical composition of the grown plate-shaped single crystals was examined using wavelength-dispersive X-ray spectroscopy. The shandite structure with R 3 ̅m symmetry was confirmed by powder X-ray diffraction and the crystal structure parameters were refined using the Rietveld method. Magnetization measurements show suppression of the ferromagnetic order upon Fe-substitution , as well as in other substituted systems such as In- and Ni-substituted Co3Sn2S2. The almost identical magnetic phase diagrams of the Fe- and In-substituted compounds indicate that the electron number is dominantly significant to the magnetism in the Co-based shandite.

Single crystal growth and characterization of kagomé-lattice shandites Co3Sn2-xInxS2

Science.gov (United States)

Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

2015-09-01

Single crystals of the shandite-type half metallic ferromagnet Co3Sn2S2, and its In-substituted compounds, Co3Sn2-xInxS2 (0grown by a flux method. We report optimum conditions to synthesize large crystals. Single crystals of the two end members, Co3Sn2S2 and Co3In2S2, and solid solutions with low In concentrations (x≤0.35) were grown out of Sn and In self flux. Solid solution single crystals with higher In concentrations were grown out of Sn, In and Pb mixture flux. Grown crystals were characterized using the powder x-ray diffraction, wavelength-dispersive x-ray spectroscopy and magnetization measurements. The shandite structure with R3¯m symmetry was confirmed and crystal structure parameters of the obtained plate-shaped hexagonal crystals were refined using the Rietveld analysis. Magnetization measurements show suppression of the ferromagnetic ordering, observed in Co3Sn2S2, by In-substitution as reported for polycrystalline samples. The obtained crystals are useful to study anisotropy in magnetic and transport properties and further interesting magnetotransport properties of the layered compounds.

Synthesis of porous CuInS2 crystals using a stirrer

International Nuclear Information System (INIS)

Akaki, Yoji; Ohno, Yuki; Momiki, Takanori

2013-01-01

Porous CuInS 2 crystals were grown from starting materials CuCl 2 .2H 2 O, InCl 3 .4H 2 O and thiorea with ethylene glycol solution, that were placed into a flask, heated, and refluxed for 1 hour. The diffraction peaks only from CuInS 2 phase appear for all the samples. The morphology of CuInS 2 crystal was porous, and the porous crystals exist in two kinds. One kind was flower-like crystals which complexly lack the flakes, another one was sphere-like crystals existed with a number of the poles. The specific surface area of the samples grown by stirring starting materials with In to Cu ratio of 4.3 for 30 minutes was found approximately to be 55 m 2 /g. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

International Nuclear Information System (INIS)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude

2009-01-01

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

Energy Technology Data Exchange (ETDEWEB)

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude, E-mail: xfchen@semi.ac.c, E-mail: nfchen@semi.ac.c [Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2009-08-15

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. (semiconductor materials)

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Directory of Open Access Journals (Sweden)

Wu Jiang

2010-01-01

Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Single crystal growth of yttrium calcium oxy borate (YCOB) crystals by flux technique and their characterization. CP-3.5

International Nuclear Information System (INIS)

Arun Kumar, R.; Senthilkumar, M.; Dhanasekaran, R.

2007-01-01

Yttrium calcium oxy borate single crystals were grown by the flux technique for the first time. Polycrystalline YCOB material was prepared by solid state reaction method. Single crystals of YCOB were grown using boron-tri-oxide flux. Several transparent single crystals of dimensions 10 x 5 x 5 mm 3 were obtained. The grown crystals were characterized by powder XRD and UV- VIS-NIR studies. The results of powder XRD confirm the crystalline structure of YCOB. The UV- VIS-NIR transmission spectrum reveals that the crystal is highly transparent (above 75%) from ultraviolet (220 nm) to near IR regions enabling it as a suitable candidate for high power UV applications

Studies on various properties of pure and Li-doped Barium Hydrogen Phosphate (BHP) single crystals

Energy Technology Data Exchange (ETDEWEB)

Nallamuthu, D. [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Selvarajan, P., E-mail: pselvarajanphy@yahoo.co.i [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Freeda, T.H. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India)

2010-12-15

Single crystals of pure and Li-doped barium hydrogen phosphate (BHP) were grown by solution method with gel technique. Various properties of the harvested crystals were studied by carrying out single crystal and powder XRD, FTIR, TG/DTA, microhardness and dielectric studies. Atomic absorption study was carried out for Li-doped BHP crystal to check the presence of Li dopants. Unit cell dimensions and diffracting planes of the grown crystals have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Density of the grown crystals was calculated using the XRD data. Thermal stability of the samples was checked by TG/DTA studies. Mechanical and dielectric characterizations of the harvested pure and Li-doped BHP crystals reveal the mechanical strength and ferroelectric transition. The observed results are reported and discussed.

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

Science.gov (United States)

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

2006-01-01

Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

Potassium-cobalt sulphate crystal growth assisted by low frequency vibrations

Science.gov (United States)

Sadovsky, A.; Ermochenkov, I.; Dubovenko, E.; Sukhanova, E.; Bebyakin, M.; Dubov, V.; Avetissov, I.

2018-02-01

Single crystals of K2Co(SO4)2·6H2O were grown from solution using the temperature reduction method enhanced by the axial low frequency vibration control technique (AVC-technique). Physical modeling of heat-mass transfer in solution under the AVC action was performed. The growth rate of the AVC grown crystal was found to be twice that of the crystal grown under natural convection conditions. Analysis of spectral characteristics (absorption and Raman spectra) as well as structural properties (dislocation density and microhardness) of the grown crystals showed the significant superiority of the AVC technique for the growth of K2Co(SO4)2·6H2O crystals.

Single crystal growth and nonlinear optical properties of Nd3+ doped STGS crystal for self-frequency-doubling application

Science.gov (United States)

Chen, Feifei; Wang, Lijuan; Wang, Xinle; Cheng, Xiufeng; Yu, Fapeng; Wang, Zhengping; Zhao, Xian

2017-11-01

The self-frequency-doubling crystal is an important kind of multi-functional crystal materials. In this work, Nd3+ doped Sr3TaGa3Si2O14 (Nd:STGS) single crystals were successfully grown by using Czochralski pulling method, in addition, the nonlinear and laser-frequency-doubling properties of Nd:STGS crystals were studied. The continuous-wave laser at 1064 nm was demonstrated along different physical axes, where the maximum output power was obtained to be 295 mW for the Z-cut samples, much higher than the Y-cut (242 mW) and X-cut (217 mW) samples. Based on the measured refractive indexes, the phase matching directions were discussed and determined for type I (42.5°, 30°) and type II (69.5°, 0°) crystal cuts. As expected, self-frequency-doubling green laser at 529 nm was achieved with output powers being around 16 mW and 12 mW for type I and type II configurations, respectively.

Studies on surface structures and etch patterns on habit faces of gel-grown crystals of iodates of barium, strontium, and calcium

International Nuclear Information System (INIS)

Joshi, M.S.; Trivedi, S.G.

1986-01-01

Microtopographical studies on habit faces of gel grown crystals (of different habits) of iodates of Ba, Sr, and Ca are illustrated and described. Etch patterns on these faces are illustrated and correlated to the observed growth patterns on the respective faces. Growth mechanism of the crystals is explained in light of the observed surface structures and etch pits suitably produced. (author)

Growth and characterizaion of urea p-nitrophenol crystal: an organic nonlinear optical material for optoelectronic device application

Science.gov (United States)

Suresh, A.; Manikandan, N.; Jauhar, RO. MU.; Murugakoothan, P.; Vinitha, G.

2018-06-01

Urea p-nitrophenol, an organic nonlinear optical crystal was synthesized and grown adopting slow evaporation and seed rotation method. Single crystal X-ray diffraction study confirmed the formation of the desired crystal. High resolution X-ray diffraction study showed the defect nature of the crystal. The presence of functional groups in the material was confirmed by FTIR analysis. UV-Vis-NIR study indicates that the grown crystal has a wider transparency region with the lower cutoff wavelength at 423 nm. The grown crystal is thermally stable up to 120 °C as assessed by TG-DTA analysis. The optical homogeneity of the grown crystal was confirmed by birefringence study. The 1064 nm Nd-YAG laser was used to obtain laser induced surface damage threshold which was found to be 0.38, 0.25 and 0.33 GW/cm2 for (0 1 0), (1 1 - 1) and (0 1 1) planes, respectively. The dielectric study was performed to find the charge distribution inside the crystal. The hardness property of the titular material has been found using Vicker's microhardness study. The optical nonlinearity obtained from third order nonlinear optical measurements carried out using Z-scan technique showed that these samples could be exploited for optical limiting studies.

A Test of Macromolecular Crystallization in Microgravity: Large, Well-Ordered Insulin Crystals

Science.gov (United States)

Borgstahl, Gloria E. O.; Vahedi-Faridi, Ardeschir; Lovelace, Jeff; Bellamy, Henry D.; Snell, Edward H.; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Crystals of insulin grown in microgravity on space shuttle mission STS-95 were extremely well-ordered and unusually large (many > 2 mm). The physical characteristics of six microgravity and six earth-grown crystals were examined by X-ray analysis employing superfine f slicing and unfocused synchrotron radiation. This experimental setup allowed hundreds of reflections to be precisely examined for each crystal in a short period of time. The microgravity crystals were on average 34 times larger, had 7 times lower mosaicity, had 54 times higher reflection peak heights and diffracted to significantly higher resolution than their earth grown counterparts. A single mosaic domain model could account for reflections in microgravity crystals whereas reflections from earth crystals required a model with multiple mosaic domains. This statistically significant and unbiased characterization indicates that the microgravity environment was useful for the improvement of crystal growth and resultant diffraction quality in insulin crystals and may be similarly useful for macromolecular crystals in general.

Development of crystals based in cesium iodide for application as radiation detectors

International Nuclear Information System (INIS)

Pereira, Maria da Conceicao Costa

2006-01-01

Inorganic scintillators with fast luminescence decay time, high density and high light output have been the object of studies for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. Scintillation crystals based on cesium iodide (CsI) are matters with relatively low higroscopy, high atomic number, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, the growth of pure CsI crystals, CsI:Br and CsI:Pb, using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1,5x10 -1 M to 10 -2 M and the lead (Pb) in the range of 10 -2 M to 5x10 -4 M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers micro-hardness assays, determination of the doping elements distribution along the grown crystals and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV and alpha particles from a 241 Am source, with energy of 5.54 MeV. It was obtained 13 ns to 19 ns for luminescence decay time for CsI:Br and CsI:Pb crystals. These results were very promising. The results obtained for micro-hardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma radiation and alpha particles. (author)

Preliminary observations of the effect of solutal convection on crystal morphology

Science.gov (United States)

Broom, M. Beth H.; Witherow, William K.; Snyder, Robert S.; Carter, Daniel C.

1988-01-01

Studies to examine the effect of solutal convection on crystal morphology using sucrose as a model system were initiated. Aspect ratios, defined as the width of the 100-plane-oriented face over the width of the 001-plane-oriented face, were determined for oriented crystals which were grown with either the 001-oriented or the 100-oriented face perpendicular to the convective flow. The dependence of the crystal morphology on orientation is much greater for crystals grown with one face occluded than for crystals grown suspended in solution. Many factors appear to interact in a complex fashion to influence crystal morphology.

Atomic structure of defects in GaN:Mg grown with Ga polarity

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

2003-01-01

Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

Structural characteristics and physical properties of diortho(pyro)silicate crystals of lanthanides yttrium and scandium grown by the Czochralski technique

Energy Technology Data Exchange (ETDEWEB)

Anan' eva, G.V.; Karapetyan, V.E.; Korovkin, A.M.; Merkulyaeva, T.I.; Peschanskaya, I.A.; Savinova, I.P.; Feofilov, P.P. (Gosudarstvennyj Opticheskij Inst., Leningrad (USSR))

1982-03-01

Optically uniform monocrystals of diortho (pyro) silicates of lanthanides, yttrium, and scandium were grown by the Czochralski technique. Four structural types of Ln/sub 2/(Si/sub 2/O/sub 7/) crystals were determined by the roentgenographic method. The presence of structural subgroups was also supported by the method of spectroscopic probes. Structural parameters were determined and data on certain physical properties (fusion temperature, density, refractive indices, transparency) of investigated crystals were presented. The generation of induced emission at lambda=1.057 ..mu..m was obtained in La/sub 2/(Si/sub 2/O/sub 7/)-Nd/sup 3 +/ crystal.

Synthesis of porous CuInS{sub 2} crystals using a stirrer

Energy Technology Data Exchange (ETDEWEB)

Akaki, Yoji; Ohno, Yuki; Momiki, Takanori [Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki 885-8567 (Japan)

2013-08-15

Porous CuInS{sub 2} crystals were grown from starting materials CuCl{sub 2}.2H{sub 2}O, InCl{sub 3}.4H{sub 2}O and thiorea with ethylene glycol solution, that were placed into a flask, heated, and refluxed for 1 hour. The diffraction peaks only from CuInS{sub 2} phase appear for all the samples. The morphology of CuInS{sub 2} crystal was porous, and the porous crystals exist in two kinds. One kind was flower-like crystals which complexly lack the flakes, another one was sphere-like crystals existed with a number of the poles. The specific surface area of the samples grown by stirring starting materials with In to Cu ratio of 4.3 for 30 minutes was found approximately to be 55 m{sup 2}/g. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Extracting trends from two decades of microgravity macromolecular crystallization history.

Science.gov (United States)

Judge, Russell A; Snell, Edward H; van der Woerd, Mark J

2005-06-01

Since the 1980s hundreds of macromolecular crystal growth experiments have been performed in the reduced acceleration environment of an orbiting spacecraft. Significant enhancements in structural knowledge have resulted from X-ray diffraction of the crystals grown. Similarly, many samples have shown no improvement or degradation in comparison to those grown on the ground. A complex series of interrelated factors affect these experiments and by building a comprehensive archive of the results it was aimed to identify factors that result in success and those that result in failure. Specifically, it was found that dedicated microgravity missions increase the chance of success when compared with those where crystallization took place as a parasitic aspect of the mission. It was also found that the chance of success could not be predicted based on any discernible property of the macromolecule available to us.

Single Crystals Grown Under Unconstrained Conditions

Science.gov (United States)

Sunagawa, Ichiro

Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Linear, non-linear and thermal properties of single crystal of LHMHCl

Science.gov (United States)

Kulshrestha, Shobha; Shrivastava, A. K.

2018-05-01

The single crystal of amino acid of L-histidine monohydrochloride was grown by slow evaporation technique at room temperature. High optical quality and appropriate size of crystals were grown under optimized growth conditions. The grown crystals were transparent. Crystals are characterized with different characterizations such as Solubility test, UV-Visible, optical band gap (Eg). With the help of optical data to be calculate absorption coefficient (α), extinction coefficient (k), refractive index (n), dielectric constant (ɛ). These optical constants are shows favorable conditions for photonics devices. Second harmonic generation (NLO) test show the green light emission which is confirm that crystal have properties for laser application. Thermal stability of grown crystal is confirmed by TG/DTA.

Characteristics of Ti:LaMgAl11O19 crystals grown by the Heat Exchanger Method (HEM)

International Nuclear Information System (INIS)

Khattak, C.P.; Lai, S.T.

1989-01-01

This paper reports single crystals of Ti:LaMgAl 11 O 19 (Ti:LMAO) up to 20 mm length obtained from unseeded ingots grown by the Heat Exchanger Method (HEM). The ingots were grown under reducing atmosphere in order to minimize formation of Ti 4+ . Strong fluorescence centered at 780 nm with a half-width ranging from 700 to 880 nm has been observed. The upper state fluorescence lifetime at room temperature was between 3.7 and 7.6 μs. The main broad-band absorption due to Ti 3+ was centered at 510 nm. In addition, parasitic absorptions at 600 nm and 959 nm have been observed which may be associated with the formation of Ti 2+

Synthesis, crystal structure, physicochemical properties of hydrogen bonded supramolecular assembly of N,N-diethylanilinium-3, 5-dinitrosalicylate crystal

Science.gov (United States)

Rajkumar, M.; Chandramohan, A.

2017-12-01

An organic salt, N,N-diethylanilinium 3,5-dinitrosalicylate was synthesized and single crystals grown by employing the slow solvent evaporation solution growth technique in methanol-acetone (1:1) mixture. The electronic transitions of the salt crystal were studied by UV-Visible spectrum. The optical transmittance window and lower wavelength cut-off of grown crystal have been identified by UV-Vis-NIR studies. The FT-IR spectrum was recorded to confirm the presence of various functional groups in the grown crystal. 1H and 13C NMR spectrum were recorded to establish the molecular structure of the title crystal. Single crystal X-ray diffraction data indicated that the crystal belongs to monoclinic crystal system with P21/n space group. The thermal stability of the crystal was established by TG/DTA studies. The mechanical properties of the grown crystal were studied by Vickers' microhardness technique. The dielectric studies indicated that the dielectric constant and dielectric loss decrease exponentially with frequency at different temperatures.

Study on grown-in defects in CZ-Si by positron annihilation

International Nuclear Information System (INIS)

Nakagawa, S.; Hori, F.; Oshima, R.

2004-01-01

In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

Crystal growth, optical properties, and laser operation of Yb3+-doped NYW single crystal

Science.gov (United States)

Cheng, Y.; Xu, X. D.; Yang, X. B.; Xin, Z.; Cao, D. H.; Xu, J.

2009-11-01

Laser crystal Yb3+-doped NaY(WO4)2 (Yb:NYW) with excellent quality has been grown by Czochralski technique. The rocking curves from (400) plane of as-grown Yb:NYW crystal was measured and the full-width value at half-maximum was 19.92″. The effective segregation coefficients were measured by the X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Yb:NYW crystal were measured at room temperature. The fluorescence decay lifetime of Yb3+ ion in NYW crystal has been investigated. The spectroscopic parameters of Yb:NYW crystal are calculated and compared with those of Yb:YAG crystal. A continuous wave output power of 3.06 W at 1031 nm was obtained with a slope efficiency of 42% by use of diode pumping.

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

Iron single crystal growth from a lithium-rich melt

Science.gov (United States)

Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.

2018-03-01

α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.

Comparative study of glycine single crystals with additive of potassium nitrate in different concentration ratios

Energy Technology Data Exchange (ETDEWEB)

Gujarati, Vivek P., E-mail: vivekgujarati@gmail.com; Deshpande, M. P., E-mail: vishwadeshpande@yahoo.co.in; Patel, Kamakshi R.; Chaki, S. H. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat (India)

2016-05-06

Semi-organic crystals of Glycine Potassium Nitrate (GPN) with potential applications in Non linear optics (NLO) were grown using slow evaporation technique. Glycine and Potassium Nitrate were taken in three different concentration ratios of 3:1, 2:1 and 1:1 respectively. We checked the solubility of the material in distilled water at different temperatures and could observe the growth of crystals in 7 weeks time. Purity of the grown crystals was confirmed by Energy Dispersive X-ray Analysis (EDAX) and CHN analysis. GSN Powder X-ray diffraction pattern was recorded to confirm the crystalline nature. To confirm the applications of grown crystals in opto-electronics field, UV-Vis-NIR study was carried out. Dielectric properties of the samples were studied in between the frequency range 1Hz to 100 KHz.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

International Nuclear Information System (INIS)

Yokota, Yuui; Yanagida, Takayuki; Fujimoto, Yutaka; Nikl, Martin; Yoshikawa, Akira

2010-01-01

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce 3+ ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce 3+ 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Non linear optical studies on semiorganic single crystal: L-arginine 4-nitrophenalate 4-nitrophenol dihydrate (LAPP)

Science.gov (United States)

Mahadevan, M.; Sankar, P. K.; Vinitha, G.; Arivanandhan, M.; Ramachandran, K.; Anandan, P.

2017-07-01

L-arginine 4-nitrophenalate 4-nitrophenol dihydrate (LAPP) has been synthesized and grown by solution growth at room temperature using deionized water as a solvent. The various functional groups of the sample were identified by Fourier transform infra-red and Fourier transforms - Raman spectroscopic analyses. The Laser damage threshold of LAPP has been studied. Refractive index of LAPP single crystal was measured using Metricon prism coupler Instrument. The etching studies were carried out to study the quality of the grown crystals. The third order nonlinear optical properties of LAPP sample was analyzed by the Z-scan technique using 532 nm diode pumped CW Nd: YAG laser. The LAPP material exhibits negative optical nonlinearity. The results show that LAPP sample has potential applications in nonlinear optics and it can be exploited for optical limiting or switching.

Crystal growth and properties of novel organic nonlinear optical crystals of 4-Nitrophenol urea

Energy Technology Data Exchange (ETDEWEB)

Mohan, M. Krishna, E-mail: krishnamohan.m@ktr.srmuniv.ac.in; Ponnusamy, S.; Muthamizhchelvan, C.

2017-07-01

Single crystals of 4-Nitrophenol urea have been grown from water using slow evaporation technique at constant temperature, with the vision to improve the properties of the crystals. The unit cell parameters of the grown crystals were determined by single crystal and powder X-Ray diffraction. FTIR studies reveals the presence of different vibrational bands. The Optical studies confirmed that the crystal is transparent up to 360 nm .TGA and DSC studies were carried out to understand the thermal behavior of crystals. The SHG studies show the suitability of the crystals for NLO applications. The etching studies were carried out to study the behavior of the crystals under different conditions.These studies reveal that the crystals of 4-Nitrophenol urea are suitable for device applications. - Highlights: • 4-Nitrophenol urea crystals of dimensions 14 mm × 1 mm were grown. • UV–Visible studies indicate the crystal is transparent in the region of 370–800 nm. • Thermal studies show the crystal starts decomposing at 170 °C. • SHG studies indicate that the crystals have NLO efficiency 3.5 times that of KDP.

Unidirectional growth and characterization of L-arginine monohydrochloride monohydrate single crystals

International Nuclear Information System (INIS)

Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.

2011-01-01

Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.

Protein Crystal Recombinant Human Insulin

Science.gov (United States)

1994-01-01

The comparison of protein crystal, Recombiant Human Insulin; space-grown (left) and earth-grown (right). On STS-60, Spacehab II indicated that space-grown crystals are larger and of greater optical clarity than their earth-grown counterparts. Recombiant Human Insulin facilitates the incorporation of glucose into cells. In diabetics, there is either a decrease in or complete lack of insulin, thereby leading to several harmful complications. Principal Investigator is Larry DeLucas.

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Science.gov (United States)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method

International Nuclear Information System (INIS)

Wei, Gaoli; Wang, Linjun; Zhang, Jijun; Yuan, Zhenwen; Qin, Kaifeng; Min, Jiahua; Liang, Xiaoyan; Xia, Yiben

2013-01-01

An indium-doped detector grade Cd 0.9 Zn 0.1 Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×10 10 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼10 5 cm −3 . The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137 Cs gamma ray radiation at room temperature for the as-grown CZT samples. -- Highlights: ► Detector grade Cd 1−x Zn x Te has been successfully grown by the THM technique. ► The as-grown CZT has a resistivity of ∼10 10 Ω cm. ► Te inclusions' size and concentration were comparable to the commercial CZT. ► A resolution of 8.5% was achieved for the 137 Cs 662 keVgamma line

Spectroscopic and crystallographic studies of YAG:Pr4+ single crystals

International Nuclear Information System (INIS)

Pawlak, D.; Frukacz, Z.; Mierczyk, Z.; Suchocki, A.; Zachara, J.

1998-01-01

Y 3 Al 5 O 12 single crystals doped with praseodymium and magnesium ions have been prepared. The reversible color change of this crystal is observed when annealing in oxidizing or reducing atmospheres. The change is ascribed to the formation of Pr 4+ in the as-grown crystal, caused by the second dopant, Mg 2+ . The absorption spectra of YAG:Pr,Mg in the range 200-1100 nm, as grown and annealed in air and H 2 /N 2 atmosphere, are presented and discussed. Additional broad absorption bands are observed for the as-grown crystals and those annealed in oxidizing atmosphere. Crystallographic investigations of the original crystal and after annealing in a reducing atmosphere as described above, show no distinct structural differences. A redox mechanism is proposed to explain the color change during annealing. (orig.)

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

Science.gov (United States)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

Energy Technology Data Exchange (ETDEWEB)

Yokota, Yuui, E-mail: y-yokota@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic/6253, Prague (Czech Republic); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan)

2010-03-15

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce{sup 3+} ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce{sup 3+} 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

International Nuclear Information System (INIS)

Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

2007-01-01

Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Science.gov (United States)

Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

2014-09-01

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Development of the mercury iodide semiconductor crystal for application as a radiation detector

International Nuclear Information System (INIS)

Martins, Joao Francisco Trencher

2011-01-01

In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

Near-infrared and upconversion properties of neodymium-doped RE0.8La0.2VO4 (RE = Y, Gd) single-crystal fibres grown by the laser-heated pedestal growth technique

International Nuclear Information System (INIS)

Camargo, A S S de; Nunes, L A O; Andreeta, M R B; Hernandes, A C

2002-01-01

Neodymium-doped Y 0.8 La 0.2 VO 4 and Gd 0.8 La 0.2 VO 4 single-crystal fibres were successfully grown by the laser-heated pedestal growth (LHPG) technique. The fibres were completely transparent and no dark inclusions were observed by optical microscopy. In the characterization process, microprobe Raman, optical absorption, fluorescence, lifetime, and gain-excited state absorption spectra were investigated in addition to upconversion measurements. The fibres' structural and spectroscopic properties are very similar to those of YVO 4 and GdVO 4 bulk laser crystals, with the advantageous characteristic of broadened spectral linewidths that facilitate the pumping of the 1064 nm emission by a diode laser. These fairly new crystal compositions, that can be grown in fast and economical processes, are potential candidates for use as compact laser-active media

Influence of the cone angle and crystal shape on the formation of twins in InP crystals

International Nuclear Information System (INIS)

Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

2012-01-01

We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Surface studies on as-grown (111) faces of sodium bromate crystals

Indian Academy of Sciences (India)

Unknown

facilitates to etch almost at the selective position. It consists of a small tube with pointed tip, after filling with ... the selective position by turning the socket. By pressing the tube gently the etchant is released drop by ... In the present study attention has also been focused to study the inclusions in the sodium bromate crystals. In.

Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride

Science.gov (United States)

2015-08-01

ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum...originator. ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal...Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum Nitride 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Rihani, J.; Ben Sedrine, N.; Sallet, V.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

2008-01-01

InAs(Sb) quantum dots (QDs) samples were grown on GaAs (001) substrate by Molecular Beam Epitaxy (MBE). The structural characterization by Atomic Force Microscopy (AFM) of samples shows that InAsSb islands size increases strongly with antimony incorporation in InAs/GaAs QDs and decreases with reducing the growth temperature from 520 deg. C to 490 deg. C. Abnormal optical behaviour was observed in room temperature (RT) photoluminescence (PL) spectra of samples grown at high temperature (520 deg. C). Temperature dependent PL study was investigated and reveals an anomalous evolution of emission peak energy (EPE) of InAsSb islands, well-known as 'S-inverted curve' and attributed to the release of confined carriers from the InAsSb QDs ground states to the InAsSb wetting layer (WL) states. With only decreasing the growth temperature, the S-inverted shape was suppressed indicating a fulfilled 3D-confinement of carriers in the InAsSb/GaAs QD sample

Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)3Si2O14 bulk single crystal

Science.gov (United States)

Igarashi, Yu; Yokota, Yuui; Ohashi, Yuji; Inoue, Kenji; Yamaji, Akihiro; Shoji, Yasuhiro; Kamada, Kei; Kurosawa, Shunsuke; Yoshikawa, Akira

2018-03-01

Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant ε11T/ε0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

Growth and characterization of benzaldehyde 4-nitro phenyl hydrazone (BPH) single crystal: A proficient second order nonlinear optical material

Science.gov (United States)

Saravanan, M.; Abraham Rajasekar, S.

2016-04-01

The crystals (benzaldehyde 4-nitro phenyl hydrazone (BPH)) appropriate for NLO appliance were grown by the slow cooling method. The solubility and metastable zone width measurement of BPH specimen was studied. The material crystallizes in the monoclinic crystal system with noncentrosymmetric space group of Cc. The optical precision in the whole visible region was found to be excellent for non-linear optical claim. Excellence of the grown crystal is ascertained by the HRXRD and etching studies. Laser Damage Threshold and Photoluminescence studies designate that the grown crystal contains less imperfection. The mechanical behaviour of BPH sample at different temperatures was investigated to determine the hardness stability of the grown specimen. The piezoelectric temperament and the relative Second Harmonic Generation (for diverse particle sizes) of the material were also studied. The dielectric studies were executed at varied temperatures and frequencies to investigate the electrical properties. Photoconductivity measurement enumerates consummate of inducing dipoles due to strong incident radiation and also divulge the nonlinear behaviour of the material. The third order nonlinear optical properties of BPH crystals were deliberate by Z-scan method.

Studies on growth, crystal structure and characterization of novel organic nicotinium trifluoroacetate single crystals

Energy Technology Data Exchange (ETDEWEB)

Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)

2011-09-15

Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

International Nuclear Information System (INIS)

Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

2013-01-01

The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

Science.gov (United States)

Su, Ching-Hua

2014-01-01

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Investigation of SiC crystals by means of synchrotron topography

International Nuclear Information System (INIS)

Wierzchowski, W.; Tymicki, E.; Balcer, T.; Pawlowska, M.; Wieteska, K.; Malinowska, A.; Wierzbicka, E.; Grasza, K.; Graeff, W.

2006-01-01

The crystallographic quality of monopolytypic 6H SiC crystals grown by Physical Vapour Transport in graphite crucible was studied. The diameter of crystals was increased up to 65 mm. The crystals were investigated using several methods of characterisation including white and monochromatic beam synchrotron diffraction topography and scanning electron microscopy. Particularly useful results were obtained using back reflection white beam synchrotron section topography, which provided the intersection of the large thickness of the sample investigated. The topographs revealed a great part of macro and micropipes present in the samples, reproduced as white areas. The additional possibility offered the section topographs taken using a fine grid with the distance between the wires equal to 0.7 mm, which enabled evaluation of the lattice deformation. The scanning electron microscopy was also very useful in studying the micropipes and voids as well as in observation of the selective etching pattern. (author)

Ge-Si single crystal growth when the begining of an ingot prepared by a new method is used as the begining of the feeding alloy

International Nuclear Information System (INIS)

Tahirov, V.I.; Quliyev, A.F.; Hasanov, Z.Y.; Qahramanov, N.F.

2008-01-01

Ge-Si system is used to describe binary solid solution single crystal growth when the beginning of the ingot prepared by a new method is used as the beginning of the feeding alloy. At first the feeding ingot is prepared by Bridgman method, then it is exposed to the zone melting. Content distribution of the feeding alloy and the grown crystal is determined by solving the continuity equation. The crystals grown by this method can be used for construction of the vary-zone structures

Thermal, mechanical, optical and dielectric properties of piperazinium hydrogen phosphite monohydrate NLO single crystal

Science.gov (United States)

Rajkumar, R.; Praveen Kumar, P.

2018-05-01

Optical transparent crystal of piperazinium hydrogen phosphite monohydrate (PHPM) was grown by slow evaporation method. The grown crystal was characterized by single crystal X-ray diffraction analysis and the crystal belongs to monoclinic system. The functional groups present in PHPM crystal were confirmed by FTIR analysis. UV-Visible spectrum shows that the PHPM crystal is transparent in the visible region. The mechanical behavior of PHPM crystal was characterized by Vickers hardness test. Thermal stability of PHPM crystal was analyzed by thermogravimetric analysis. Dielectric studies were also carried out for the grown crystal. The third-order nonlinear parameters such as nonlinear refractive index and nonlinear absorption coefficient have been calculated using Z scan technique.

Growth, structural, optical, thermal and mechanical studies on 4-Aminopyridinium monophthalate: A novel nonlinear optical crystal

Science.gov (United States)

Marudhu, G.; Krishnan, S.; Palanichamy, M.

2016-03-01

A novel nonlinear optical crystal of 4-Aminopyridinium monophthalate (4-APMP) was grown by slow evaporation technique using methanol as solvent. Single crystal X-ray diffraction analysis confirms that the grown crystal belongs to orthorhombic system. The presence of functional groups was qualitatively determined by FTIR analysis. The optical absorption studies reveal very low absorption in the entire visible region. The fluorescence emission spectrum shows the emission is in blue region. The thermal stability of the grown crystal is found to be around 197.2 °C. The SHG efficiency of the grown crystal is found to be 1.1 times than that of KDP crystals.

Study of thermochemically reduced and electron-irradiated LiNbO3 single crystals by positron annihilation and optical absorption measurements

International Nuclear Information System (INIS)

Pareja, R.; Gonzalez, R.; Pedrosa, M.A.

1984-01-01

Irradiation of LiNbO 3 single crystals using Van de Graaff electrons with an energy of 1.5 MeV introduces an optical absorption band similar to that observed in thermochemically reduced samples. As-grown, reduced, or irradiated crystals show single-component positron lifetime spectra with an average decay time of 234 ps. (author)

Further results on cerium fluoride crystals

International Nuclear Information System (INIS)

Anderson, S.; Auffray, E.; Aziz, T.; Baccaro, S.; Banerjee, S.; Bareyre, P.; Barone, L.E.; Borgia, B.; Boutet, D.; Burq, J.P.; Chemarin, M.; Chipaux, R.; Dafinei, I.; D'Atanasio, P.; De Notaristefani, F.; Dezillie, B.; Dujardin, C.; Dutta, S.; Faure, J.L.; Fay, J.; Ferrere, D.; Francescangeli, O.; Fuchs, B.A.; Ganguli, S.N.; Gillespie, G.; Goyot, M.; Gupta, S.K.; Gurtu, A.; Heck, J.; Herve, A.; Hillemanns, H.; Holdener, F.; Ille, B.; Joensson, L.; Kierstead, J.; Krenz, W.; Kway, W.; Le Goff, J.M.; Lebeau, M.; Lebrun, P.; Lecoq, P.; Lemoigne, Y.; Loomis, G.; Lubelsmeyer, K.; Madjar, N.; Majni, G.; El Mamouni, H.; Mangla, S.; Mares, J.A.; Martin, J.P.; Mattioli, M.; Mauger, G.J.; Mazumdar, K.; Mengucci, P.; Merlo, J.P.; Moine, B.; Nikl, N.; Pansart, J.P.; Pedrini, C.; Poinsignon, J.; Polak, K.; Raghavan, R.; Rebourgeard, P.; Rinaldi, D.; Rosa, J.; Rosowsky, A.; Sahuc, P.; Samsonov, V.; Sarkar, S.; Schegelski, V.; Schmitz, D.; Schneegans, M.; Seliverstov, D.; Stoll, S.; Sudhakar, K.; Svensson, A.; Tonwar, S.C.; Topa, V.; Vialle, J.P.; Vivargent, M.; Wallraff, W.; Weber, M.J.; Winter, N.; Woody, C.; Wuest, C.R.; Yanovski, V.

1993-01-01

A systematic investigation of the properties of cerium fluoride monocrystals has been performed by the 'Crystal Clear' collaboration in view of a possible use of such crystals for the construction of high precision electromagnetic calorimeters for the future generation of high luminosity accelerators. A large sample of different crystals grown by several producers has been studied. The spectroscopic characteristics, the transmission, luminescence and excitation spectra and the decay time curves are analysed. The light yield of the different crystals is measured with photomultipliers and Si photodiodes and compared to reference standards like BGO and NaI(Tl). The radiation damage behaviour is then presented for γ and neutron irradiations, at different doses and dose rates, including thermal and optical bleaching. (orig.)

Crystal growth and characterization of Tm doped mixed rare-earth aluminum perovskite

Energy Technology Data Exchange (ETDEWEB)

Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho, Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Sugiyama, Makoto; Fujimoto, Yutaka; Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-04-15

Highlights: Black-Right-Pointing-Pointer (Lu{sub x}Gd{sub y}Y{sub 0.99-x-y}Tm{sub 0.01})AP single crystals were grown by the {mu}-PD method. Black-Right-Pointing-Pointer The grown crystals were single phase with perovskite structure (Pbnm). Significant segregation of Lu and Gd was detected in the growth direction. Black-Right-Pointing-Pointer Some absorption bands due to Tm{sup 3+}, Gd{sup 3+} and color centers were exhibited. Black-Right-Pointing-Pointer Radioluminescence spectra showed several emission peaks ascribed to Tm{sup 3+} and Gd{sup 3+}. -- Abstract: In this work, we present results of structural characterization and optical properties including radio luminescence of (Lu{sub x}Gd{sub y}Y{sub 0.99-x-y}Tm{sub 0.01})AP single crystal scintillators for (x, y) = (0.30, 0.19), (0, 0.19) and (0, 0) grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were single phase materials with perovskite structure (Pbnm) as confirmed by XRD and had a good crystallinity. The distribution of the crystal constituents in growth direction was evaluated, and significant segregation of Lu and Gd was detected in (Lu{sub 0.30}Gd{sub 0.19}Y{sub 0.50}Tm{sub 0.01})AP sample. The crystals demonstrated 70% transmittance in visible wavelength range and some absorption bands due to Tm{sup 3+}, Gd{sup 3+} and color centers were exhibited in 190-900 nm. The radioluminescence measurement under X-ray irradiation demonstrated several emission peaks ascribed to 4f-4f transitions of Tm{sup 3+} and Gd{sup 3+}. The ratio of emission intensity in longer wavelength range was increased when Y was replaced by Lu or Gd.

Growth, structural, optical and surface analysis of piperazinium tartrate: A NLO single crystal

Science.gov (United States)

Gupta, Apurva; Raseel Rahman M., K.; Nair, Lekha

2018-05-01

Single crystal of piperazinium tartrate (PPZT) was grown by the slow evaporation solution growth technique at room temperature. Crystallinity of grown crystal was examined by powder X-ray diffraction. High transparency and wide band gap were observed in the UV-Visible spectroscopic studies. Intense and broad emissions were observed in the blue region, as that is indicated by photoluminescence spectroscopy. The quality of the grown PPZT single crystals were analyzed by the etching studies using the water as the etchant.

Silicon crystal growth using a liquid-feeding Czochralski method

Science.gov (United States)

Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

1996-09-01

Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

Scintillation properties of μPD-grown Y{sub 4}Al{sub 2}O{sub 9}:Pr (YAM:Pr) crystals

Energy Technology Data Exchange (ETDEWEB)

Drozdowski, Winicjusz, E-mail: wind@fizyka.umk.pl [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Brylew, Kamil [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Malinowski, Michał [Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Turczyński, Sebastian [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

2015-05-25

Highlights: • YAM:Pr crystals do scintillate and as such deserve further interest. • Fast d–f luminescence of Pr{sup 3+} ions appears in X-ray excited spectra. • Two components (24 and 790 ns) constitute scintillation time profiles. - Abstract: Y{sub 4}Al{sub 2}O{sub 9}:Pr (YAM:Pr) crystals have been grown by the micro-pulling-down method and their scintillation properties have been investigated. YAM:0.1%Pr displays a light yield of about 2000 ph/MeV and its scintillation time profile contains a prompt component with a decay time of 23.5 ns and a contribution of 20%. Radioluminescence spectra show both fast d–f and slow f–f praseodymium emissions. Low temperature glow curves are complex, consisting of discrete peaks and broad bands related to quasi-continuous trap distributions. Overall scintillation performance of YAM:Pr deteriorates with increasing praseodymium concentration.

Crystal growth, spectral and laser properties of Nd:LSAT single crystal

Science.gov (United States)

Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

2011-10-01

Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

Influence of impurities on the surface morphology of the TIBr crystal semiconductor

International Nuclear Information System (INIS)

Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

2013-01-01

The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

Crystal growth and optical properties of Sm:CaNb2O6 single crystal

International Nuclear Information System (INIS)

Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun

2012-01-01

Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.

Shape Evolution of Detached Bridgman Crystals Grown in Microgravity

Science.gov (United States)

Volz, M. P.; Mazuruk, K.

2015-01-01

A theory describing the shape evolution of detached Bridgman crystals in microgravity has been developed. A starting crystal of initial radius r0 will evolve to one of the following states: Stable detached gap; Attachment to the crucible wall; Meniscus collapse. Only crystals where alpha plus omega is great than 180 degrees will achieve stable detached growth in microgravity. Results of the crystal shape evolution theory are consistent with predictions of the dynamic stability of crystallization (Tatarchenko, Shaped Crystal Growth, Kluwer, 1993). Tests of transient crystal evolution are planned for ICESAGE, a series of Ge and GeSi crystal growth experiments planned to be conducted on the International Space Station (ISS).

Growth and characterization of nonlinear optical bimetallic thiocyanate complex of MCCTC crystal

Science.gov (United States)

Ravi Kumar, S. M.; Melikechi, N.; Selvakumar, S.; Sagayaraj, P.

2009-04-01

An organometallic material of mercury cadmium chloride thiocyanate (MCCTC) was synthesized in water-methanol mixed solvent. Optically good grade crystal was grown by slow evaporation technique under optimized conditions. MCCTC belongs to rhombohedral system with R3c space group. The metal coordinations with (S with Hg and N with Cd) SCN - ion were confirmed in the sample by Fourier transform infrared (FT-IR) spectroscopic investigations. The transmission spectrum recorded from 200 to 2500 nm showed the UV transparency cutoff at 300 nm. MCCTC crystal exhibits a second-harmonic generation (SHG) efficiency which is nearly 17 times more than that of KDP. The microhardness study indicates the hard nature of the grown sample with a work hardening coefficient of 1.73. The thermal decomposition process was investigated by thermo gravimetric and differential thermal analyses.

Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

International Nuclear Information System (INIS)

Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

2002-01-01

In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

Synthesis, growth, morphology and characterization of ferroelectric glycine phosphite single crystals

Energy Technology Data Exchange (ETDEWEB)

Devi, K. Renuka; Srinivasan, K. [Crystal Growth Laboratory, Department of Physics, School of Physical Sciences, Bharathiar University, Tamil Nadu (India)

2011-12-15

Glycine phosphite (NH{sub 3}CH{sub 2}COO.H{sub 3}PO{sub 3}), a potential ferroelectric material, was grown as single crystals from aqueous solutions by slow evaporation and slow cooling methods. Laboratory synthesized title compound was purified by recrystallization method and confirmed by Fourier transform infrared and Laser Raman studies. Temperature dependent solubility in double distilled water in the range between 288 and 328 K was determined by gravimetric method. Morphological importance of various growth faces were studied by optical goniometry. Powder x-ray diffraction study performed on the grown crystals confirms the crystal system and lattice parameters of the unit cell. Optical transparency of the grown crystals in the ultraviolet-visible -near infrared region was studied by spectroscopic method. Thermal stability of the grown crystals in the temperature region above ambient until melting was studied using differential scanning calorimetry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth and Characterization of ZnTe Crystal

International Nuclear Information System (INIS)

Nann Thazin

2011-12-01

High quality ZnTe crystals have been synthesized by vapor Transport method. The grown crystals were p-type. The concentration and mobility were 2.5 x 10 16 cm-3 and 23 cm2/Vs at 300K, according to Hall effect measurements. Surface morphology of the crystal was investigated by scanning electron microscope (SEM). Crystal orientation and lattice parameters of the crystals were also analysed by XRD. From X-ray diffraction studies the structure of the grown crystals were found to be zinc-blende. The crystal emitted light in the visible range at room temperature.

Space growth studies of Ce-doped Bi12SiO20 single crystal

International Nuclear Information System (INIS)

Zhou, Y.F.; Wang, J.C.; Tang, L.A.; Pan, Z.L.; Chen, N.F.; Chen, W.C.; Huang, Y.Y.; He, W.

2004-01-01

Ce-doped Bi 12 SiO 20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one

Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices

Energy Technology Data Exchange (ETDEWEB)

Umezu, Nobuhiko; Fukui, Tatsuo; Okamoto, Tsutomu; Wada, Hiroyuki; Tatsuki, Kouichi; Kondo, Kenji; Kubota, Shigeo [Sony Corp., Tokyo (Japan)

1998-03-01

We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)

Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs

DEFF Research Database (Denmark)

Dankowski, S. U.; Streb, D.; Ruff, M.

1996-01-01

coefficients at the band gap are twice as high as for high temperature grown materials. By annealing the samples, we obtained a drastic reduced absorption coefficient below as well as above the band gap. We observed absorption changes up to 17 000 cm(-1) for LT-GaAs and 9000 cm(-1) for LT-AlGaAs taking place......Room temperature absorption spectra of low temperature molecular beam epitaxy grown GaAs (LT-GaAs) and AlGaAs (LT-AlGaAs) are reported. We performed measurements in an extended spectral range from 0.8 eV to photon energies of 2.8 eV far above the band gap. For as-grown LT-materials, the absorption...

Crystal growth and scintillation properties of Er-doped Lu3Al5O12 single crystals

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

2012-01-01

Er-doped Lu 3 Al 5 O 12 (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down (μ-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under 241 Am α-ray excitation indicated host emission at approximately 350 nm and Er 3+ 4f-4f emissions. According to the pulse height spectra recorded under γ-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The γ-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 μs and 6-10 μs).

Dielectric, piezoelectric properties of MnO2-doped (K0.5Na0.5)NbO3–0.05LiNbO3 crystal grown by flux-Bridgman method

International Nuclear Information System (INIS)

Liu, Ying; Xu, Guisheng; Liu, Jinfeng; Yang, Danfeng; Chen, Xiaxia

2014-01-01

Highlights: • KNN–0.05LN based single crystals were grown by flux-Bridgman method. • Dielectric, piezoelecrc and ferroelectric properties were studied. • The effect of MnO 2 doping on the crystals' properties. • Dielectric and other properties were improved due to MnO 2 doping. - Abstract: Lead-free potassium sodium niobate piezoelectric single crystals substituted with lithium and then doped with MnO 2 (K 0.5 Na 0.5 )NbO 3 –0.05LiNbO 3 –yMnO 2 (y = 0%, 1.0% and 1.5%) (abbreviated as KNN–0.05LN–yMnO 2 ) have been grown by flux-Bridgman method using KCl–K 2 CO 3 eutectic composition as the flux. Their actual composition as well as the dielectric and piezoelectric properties were studied. Their actual composition deviated from the ratio of the raw materials due to different segregation coefficients of K and Na. The orthorhombic–tetragonal (T o–t ) and tetragonal–cubic phase transition temperature (the Curie temperature T c ) of the single crystal appears at 186 °C and 441 °C, respectively, for KNN–0.05LN–1.0%MnO 2 , shift to higher temperatures compared with that of pure KNN–0.05LN crystals, according to the dielectric permittivity versus temperature loops. The KNN–0.05LN–1.0%MnO 2 (001) plate shows higher piezoelectric coefficient d 33 and dielectric permittivity ε r when compared with pure KNN–0.05LN crystal, being on the order of 226 pC/N and 799 (161 pC/N and 530 for KNN–0.05LN), respectively. These excellent properties show that MnO 2 dopant is effective in improving KNN–0.05LN based piezoelectric crystals

Czochralski growth of gallium indium antimonide alloy crystals

Energy Technology Data Exchange (ETDEWEB)

Tsaur, S.C.

1998-02-01

Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

Growth of binary solid solution single crystals and calculation of melt surface displacement velocity

International Nuclear Information System (INIS)

Agamaliyev, Z.A.; Tahirov, V.I.; Hasanov, Z.Y.; Quliyev, A.F.

2007-01-01

A binary solid solution single crystal growth method has been worked out. Cylinder feeding alloy with complex content distribution and truncated cone crucible are used. Second component distribution coefficient is more than unit. Content distribution along grown crystal is found by solving continuity equation. After reaching dynamic equilibrium state second component concentration in grown crystal is saturated the value of which is less than the average ona in the feeding alloy. Using the method Ge-Si perfect single crystals has been grown. Calculation method of melt surface displacement velocity has been offered as well

Growth and characterization of nonlinear optical single crystal: Nicotinic L-tartaric

Energy Technology Data Exchange (ETDEWEB)

Sheelarani, V.; Shanthi, J., E-mail: shanthinelson@gmail.com [Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore-641043 (India)

2015-06-24

Nonlinear optical single crystals were grown from Nicotinic and L-Tartaric acid by slow evaporation technique at room temperature. Structure of the grown crystal was confirmed by single crystal X-ray diffraction studies, The crystallinity of the Nicotinic L-Tartaric (NLT) crystals was confirmed from the powder XRD pattern. The transparent range and cut off wavelength of the grown crystal was studied by the UV–Vis spectroscopic analysis.The thermal stability of the crystal was studied by TG-DTA. The second harmonic generation (SHG) efficiency of NLT was confirmed by Kurtz Perry technique.

Crystallization engineering as a route to epitaxial strain control

Directory of Open Access Journals (Sweden)

Andrew R. Akbashev

2015-10-01

Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Science.gov (United States)

Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

2017-02-01

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

Science.gov (United States)

2017-10-09

for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

International Nuclear Information System (INIS)

Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

2011-01-01

Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport in Low Gravity

Science.gov (United States)

Su, Ching-Hua; Ramachandran, N.

2013-01-01

Crystals of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, will be grown by physical vapor transport in the Material Science Research Rack (MSRR) on International Space Station (ISS). The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Role of Precursor-Conversion Chemistry in the Crystal-Phase Control of Catalytically Grown Colloidal Semiconductor Quantum Wires.

Science.gov (United States)

Wang, Fudong; Buhro, William E

2017-12-26

Crystal-phase control is one of the most challenging problems in nanowire growth. We demonstrate that, in the solution-phase catalyzed growth of colloidal cadmium telluride (CdTe) quantum wires (QWs), the crystal phase can be controlled by manipulating the reaction chemistry of the Cd precursors and tri-n-octylphosphine telluride (TOPTe) to favor the production of either a CdTe solute or Te, which consequently determines the composition and (liquid or solid) state of the Bi x Cd y Te z catalyst nanoparticles. Growth of single-phase (e.g., wurtzite) QWs is achieved only from solid catalysts (y ≪ z) that enable the solution-solid-solid growth of the QWs, whereas the liquid catalysts (y ≈ z) fulfill the solution-liquid-solid growth of the polytypic QWs. Factors that affect the precursor-conversion chemistry are systematically accounted for, which are correlated with a kinetic study of the composition and state of the catalyst nanoparticles to understand the mechanism. This work reveals the role of the precursor-reaction chemistry in the crystal-phase control of catalytically grown colloidal QWs, opening the possibility of growing phase-pure QWs of other compositions.

Theoretical and experimental morphologies of 4-aminobenzophenone (ABP) crystals

Science.gov (United States)

Wang, Qingwu; Sheen, D. B.; Shepherd, E. E. A.; Sherwood, J. N.; Simpson, G. S.; Hammond, R. B.

1997-11-01

The lattice energy (Elatt), slice energies (Eslice) and attachment energies (Eatt) of the different habit faces of ABP crystals have been calculated using the computer program HABIT. On the basis of the attachment energies of different crystal faces, the morphology was defined as {1 0 0}, {0 0 1}, {1 1 0}, {11bar0} and {1 01bar}. To confirm this theoretical prediction, we have grown ABP films and ABP crystals from the vapour phase. In both cases, the morphologically most important face was defined as {1 0 0} face using X-ray diffraction techniques. The remaining faces of the vapour-grown crystals were defined using a projection method, while the crystallites in the films were morphologically analysed by means of atomic force microscopy (AFM). The experimental morphologies are basically in agreement with the computation. Deviations from the equilibrium morphology can be ascribed to departure from equilibrium conditions during growth. For completeness, the results are compared with those for crystals grown from solutions for which deviations in morphology from the theoretical predictions can be ascribed to interaction between the crystal faces and solvent molecules.

Three-dimensional crystals of ribosomes and their subunits from eu- and archaebacteria.

Science.gov (United States)

Glotz, C; Müssig, J; Gewitz, H S; Makowski, I; Arad, T; Yonath, A; Wittmann, H G

1987-11-01

Ordered three-dimensional crystals of 70S ribosomes as well as of 30S and 50S ribosomal subunits from various bacteria (E. coli, Bacillus stearothermophilus, Thermus thermophilus and Halobacterium marismortui) have been grown by vapour diffusion in hanging drops using mono- and polyalcohols. A new compact crystal form of 50S subunits has been obtained, and it is suitable for crystallographic studies at medium resolution. In addition, from one crystal form large crystals could be grown in X-ray capillaries. In all cases the crystals were obtained from functionally active ribosomal particles, and the particles from dissolved crystals retained their integrity and biological activity.

Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

2016-01-01

We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

Crystal growth, structural, optical, thermal, mechanical, laser damage threshold and electrical properties of triphenylphosphine oxide 4-nitrophenol (TP4N) single crystals for nonlinear optical applications

Science.gov (United States)

Karuppasamy, P.; Senthil Pandian, Muthu; Ramasamy, P.; Verma, Sunil

2018-05-01

The optically good quality single crystals of triphenylphosphine oxide 4-nitrophenol (TP4N) with maximum dimension of 15 × 10 × 5 mm3 were grown by slow evaporation solution technique (SEST) at room temperature. The cell dimensions of the grown TP4N crystal were confirmed by single crystal X-ray diffraction (SXRD) and the crystalline purity was confirmed and planes were indexed by powder X-ray diffraction (PXRD) analysis. Functional groups of TP4N crystal were confirmed by Fourier transform infrared (FTIR) spectral analysis. The optical transmittance of the grown crystal was determined by the UV-Vis NIR spectral analysis and it has good optical transparency in the entire visible region. The band tail (Urbach) energy of the grown crystal was analyzed and it appears to be minimum, which indicates that the TP4N has good crystallinity. The position of valence band (Ev) and conduction band (Ec) of the TP4N have been determined from the electron affinity energy (EA) and the ionization energy (EI) of its elements and using the optical band gap. The thermal behaviour of the grown crystal was investigated by thermogravimetric and differential thermal analysis (TG-DTA). Vickers microhardness analysis was carried out to identify the mechanical stability of the grown crystal and their indentation size effect (ISE) was explained by the Meyer's law (ML), Hays-Kendall's (HK) approach, proportional specimen resistance (PSR) model, modified PSR model (MPSR), elastic/plastic deformation (EPD) model and indentation induced cracking (IIC) model. Chemical etching study was carried out to find the etch pit density (EPD) of the grown crystal. Laser damage threshold (LDT) value was measured by using Nd:YAG laser (1064 nm). The dielectric permittivity (ε՛) and dielectric loss (tan δ) as a function of frequency was measured. The electronic polarizability (α) of the TP4N crystal was calculated. It is well matched to the value which was calculated from Clausius-Mossotti relation

Microbiological Sampling Methods and Sanitation of Edible Plants Grown on ISS

Science.gov (United States)

Parrish, Charles H. II; Khodadad, Christina L.; Garland, Nathaniel T.; Larson, Brian D.; Hummreick, Mary E.

2013-01-01

Pathogenic microbes on the surfaces of salad crops and growth chambers pose a threat to the health of crew on International Space Station. For astronauts to safely consume spacegrown vegetables produced in NASA's new vegetable production unit, VEGGIE, three technical challenges must be overcome: real-time sampling, microbiological analysis, and sanitation. Raphanus sativus cultivar Cherry Bomb II and Latuca sativa cultivar Outredgeous, two saled crops to be grown in VEGGIE, were inoculated with Salmonella enterica serovar Typhimurium (S. Typhimurium), a bacterium known to cause food-borne illness Tape- and swab-based sampling techniques were optimized for use in microgravity and assessed for effectiveness in recovery of bacteria from crop surfaces: Rapid pathogen detection and molecular analyses were performed via quantitative real-time polymerase chain reactiop using LightCycler® 480 and RAZOR® EX, a scaled-down instrument that is undergoing evaluation and testing for future flight hardware. These methods were compared with conventional, culture-based methods for the recovery of S. Typhimurium colonies. A sterile wipe saturated with a citric acid-based, food-grade sanitizer was applied to two different surface materials used in VEGGIE flight hardware that had been contaminated with the bacterium Pseudomonas aeruginosa,. another known human pathogen. To sanitize surfaces, wipes were saturated with either the sanitizer or sterile deionized water and applied to each surface. Colony forming units of P. aeruginosa grown on tryptic soy agar plates were enumerated from surface samples after sanitization treatments. Depending on the VEGGIE hardware material, 2- to 4.5-log10 reductions in colony-forming units were observed after sanitization. The difference in recovery of S. Typhimurium between tape- and swab- based sampling techniques was insignificant. RAZOR® EX rapidly detected S. Typhimurium present in both raw culture and extracted DNA samples.

Studies of the surface structures of molecular crystals and of adsorbed molecular monolayers on the (111) crystal faces of platinum and silver by low-energy electron diffraction

International Nuclear Information System (INIS)

Firment, L.E.

1977-01-01

The structures of molecular crystal surfaces were investigated for the first time by the use of low-energy electron diffraction (LEED). The experimental results from a variety of molecular crystals were examined and compared as a first step towards understanding the properties of these surfaces on a microscopic level. The method of sample preparation employed, vapor deposition onto metal single-crystal substrates at low temperatures in ultrahigh vacuum, allowed concurrent study of the structures of adsorbed monolayers on metal surfaces and of the growth processes of molecular films on metal substrates. The systems investigated were ice, ammonia, naphthalene, benzene, the n-paraffins (C 3 to C 8 ), cyclohexane, trioxane, acetic acid, propionic acid, methanol, and methylamine adsorbed and condensed on both Pt(111) and Ag(111) surfaces. Electron-beam-induced damage of the molecular surfaces was observed after electron exposures of 10 -4 A sec cm -2 at 20 eV. Aromatic molecular crystal samples were more resistant to damage than samples of saturated molecules. The quality and orientation of the grown molecular crystal films were influenced by substrate preparation and growth conditions. Forty ordered monolayer structures were observed. 110 figures, 22 tables, 162 references

Habit modification of bis-thiourea zinc chloride (ZTC) semi organic crystals by impurities

Science.gov (United States)

Ruby Nirmala, L.; Thomas Joseph Prakash, J.

2013-06-01

Single crystals of bis-thiourea zinc chloride (ZTC) doped with metal ion (Li+) possess excellent nonlinear optical properties. These crystals were grown by slow evaporation solution growth technique. The effect of Li+ dopant on the growth and properties of ZTC single crystal were investigated and reported. The grown crystals were crystallized in orthorhombic structure with non-centro symmetric space group Pn21a through the parent compound. The amount of dopant incorporated in the parent crystal was revealed by the inductively coupled plasma (ICP-OES) studies. The FT-IR spectroscopy study was done for finding and confirming the functional groups present in the compound. The UV-Visible spectral study was carried out to find the optical behavior and transparency nature of the grown crystal. TG/DTA measurements and Vickers microhardness measurements were traced to find out the thermal and mechanical stability of the grown crystals respectively. Using Nd:YAG laser, the Second harmonic generation (SHG) for the grown crystals were confirmed.

Investigations on the nucleation kinetics of γ-glycine single crystal

International Nuclear Information System (INIS)

Yogambal, C.; Rajan Babu, D.; Ezhil Vizhi, R.

2014-01-01

Single crystals of γ-glycine were grown by slow evaporation technique. The crystalline system was confirmed by single crystal X-ray diffraction analysis. The optical absorption study has shown that the grown crystal possesses lower cut-off wavelength. Solubility and metastable zone width were estimated for different temperatures. The induction period of title compound was determined by varying the temperature and concentration. Nucleation parameters such as Gibbs volume free energy change (ΔG v ), interfacial tension (γ), critical free energy change of the nucleus (ΔG ⁎ ), nucleation rate (J), number of molecules in the critical nucleus (i ⁎ ) have been calculated for the aqueous solution grown γ-glycine single crystals. The second harmonic generation (SHG) of γ-glycine was confirmed by Q-switched Nd:YAG laser technique

Optical and X-ray absorption spectroscopy in lead doped lithium fluoride crystals

Energy Technology Data Exchange (ETDEWEB)

Somma, F; Aloe, P; D' Acapito, F; Montereali, R M; Polosan, S; Secu, M; Vincenti, M A, E-mail: somma@fis.uniroma3.it

2010-11-15

LiF:Pb doped crystals were successfully grown by Kyropoulos method, starting with drying powders. The presence of Pb{sup 2+} ions in the LiF crystals were evidenced by the absorption band at 278 nm and by 375 nm photoluminescence. The presence of some other Pb structures with oxygen compounds in the as made samples was evidenced, decreasing after some annealing procedures. The local environment and valence state of Pb in LiF were studied by X-ray Absorption Spectroscopy at the Pb L{sub III} and L{sub I} edges. XANES data reveal that Pb is present as Pb{sup 2+} whereas EXAFS data show that it is incorporated in the crystal and not forming PbF{sub 2} precipitates. Identical spectra are obtained for samples as prepared and after thermal annealing up to 650 deg. C demonstrating the stability of the incorporation site. Also the concentration of Pb in the crystal has no effect on the location site of the metal as the same spectrum is obtained for specimens with different dopant concentrations.

Growth of Bi 12SiO 20 single crystals by the pulling-down method with continuous feeding

Science.gov (United States)

Maida, Shigeru; Higuchi, Mikio; Kodaira, Kohei

1999-09-01

Bi 12SiO 20 single crystals were successfully grown by the pulling-down method with continuous feeding. As-grown crystals were amber in color and transparent, and had no cracks or inclusions. A crystal with homogeneous composition was obtained from Bi-rich feed powder having a composition of 14.1 mol% SiO 2, whereas precipitates of Bi 4Si 3O 12 were observed on the surface of a crystal grown with stoichiometric powder. The shape of the solid-liquid interface during the crystal growth was estimated to be almost flat, which was favorable to avoid core formation. Average dislocation density was 4×10 3/cm 2, which was comparable to that of Bi 12SiO 20 crystals grown by the Czochralski method.

Synthesis, crystal growth, optical, thermal, and mechanical properties of a nonlinear optical single crystal: ammonium sulfate hydrogen sulphamate (ASHS)

Science.gov (United States)

Sudhakar, K.; Nandhini, S.; Muniyappan, S.; Arumanayagam, T.; Vivek, P.; Murugakoothan, P.

2018-04-01

Ammonium sulfate hydrogen sulphamate (ASHS), an inorganic nonlinear optical crystal, was grown from the aqueous solution by slow evaporation solution growth technique. The single-crystal XRD confirms that the grown single crystal belongs to the orthorhombic system with the space group of Pna21. Powder XRD confirms the crystalline nature and the diffraction planes were indexed. Crystalline perfection of grown crystal was analysed by high-resolution X-ray diffraction rocking curve technique. UV-Vis-NIR studies revealed that ASHS crystal has optical transparency 65% and lower cut-off wavelength at 218 nm. The violet light emission of the crystal was identified by photoluminescence studies. The particle size-dependent second-harmonic generation efficiency for ASHS crystal was evaluated by Kurtz-Perry powder technique using Nd:YAG laser which established the existence of phase matching. Surface laser damage threshold value was evaluated using Nd:YAG laser. Optical homogeneity of the crystal was evaluated using modified channel spectrum method through birefringence study. Thermal analysis reveals that ASHS crystal is stable up to 213 °C. The mechanical behaviour of the ASHS crystal was analysed using Vickers microhardness study.

Pi sampling: a methodical and flexible approach to initial macromolecular crystallization screening

International Nuclear Information System (INIS)

Gorrec, Fabrice; Palmer, Colin M.; Lebon, Guillaume; Warne, Tony

2011-01-01

Pi sampling, derived from the incomplete factorial approach, is an effort to maximize the diversity of macromolecular crystallization conditions and to facilitate the preparation of 96-condition initial screens. The Pi sampling method is derived from the incomplete factorial approach to macromolecular crystallization screen design. The resulting ‘Pi screens’ have a modular distribution of a given set of up to 36 stock solutions. Maximally diverse conditions can be produced by taking into account the properties of the chemicals used in the formulation and the concentrations of the corresponding solutions. The Pi sampling method has been implemented in a web-based application that generates screen formulations and recipes. It is particularly adapted to screens consisting of 96 different conditions. The flexibility and efficiency of Pi sampling is demonstrated by the crystallization of soluble proteins and of an integral membrane-protein sample

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

Science.gov (United States)

Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

1998-12-01

Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

Protein crystal growth in low gravity

Science.gov (United States)

Feigelson, Robert S.

1993-01-01

This Final Technical Report for NASA Grant NAG8-774 covers the period from April 27, 1989 through December 31, 1992. It covers five main topics: fluid flow studies, the influence of growth conditions on the morphology of isocitrate lyase crystals, control of nucleation, the growth of lysozyme by the temperature gradient method and graphoepitaxy of protein crystals. The section on fluid flow discusses the limits of detectability in the Schlieren imaging of fluid flows around protein crystals. The isocitrate lyase study compares crystals grown terrestrially under a variety of conditions with those grown in space. The controlling factor governing the morphology of the crystals is the supersaturation. The lack of flow in the interface between the drop and the atmosphere in microgravity causes protein precipitation in the boundary layer and a lowering of the supersaturation in the drop. This lowered supersaturation leads to improved crystal morphology. Preliminary experiments with lysozyme indicated that localized temperature gradients could be used to nucleate crystals in a controlled manner. An apparatus (thermonucleator) was designed to study the controlled nucleation of protein crystals. This apparatus has been used to nucleate crystals of materials with both normal (ice-water, Rochelle salt and lysozyme) and retrograde (horse serum albumin and alpha chymotrypsinogen A) solubility. These studies have lead to the design of an new apparatus that small and more compatible with use in microgravity. Lysozyme crystals were grown by transporting nutrient from a source (lysozyme powder) to the crystal in a temperature gradient. The influence of path length and cross section on the growth rate was demonstrated. This technique can be combined with the thermonucleator to control both nucleation and growth. Graphoepitaxy utilizes a patterned substrate to orient growing crystals. In this study, silicon substrates with 10 micron grooves were used to grow crystals of catalase

Crystal Structure of Tetragonal Form of La2NiO4+x

Science.gov (United States)

Kajitani, Tsuyoshi; Hosoya, Syoichi; Hirabayashi, Makoto; Fukuda, Tsuguo; Onozuka, Takashi

1989-10-01

The crystal structure of the title oxide was studied by means of the X-ray and neutron single crystal diffraction measurements. At room temperature, the tetragonal crystal structure is P42/ncm-type (No. 138), which is one of the subgroup of the space group I4/mmm. The lattice parameters of a sample annealed and slowly cooled in oxygen atmosphere from 673 K are a{=}b{=}5.4640(1) Å and c{=}12.6719(2) Å, while the oxygen content, x{=}0.10(4), was determined from obtained neutron data. The title oxide undergoes a tetragonal (P42/ncm)/tetragonal (I4/mmm) phase transition at about 560 K. The transition temperature is almost identical both in the annealed and as-grown crystals.

Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

Energy Technology Data Exchange (ETDEWEB)

Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

2012-06-30

The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

Solid-state reaction kinetics and optical studies of cadmium doped magnesium hydrogen phosphate crystals

Science.gov (United States)

Verma, Madhu; Gupta, Rashmi; Singh, Harjinder; Bamzai, K. K.

2018-04-01

The growth of cadmium doped magnesium hydrogen phosphate was successfully carried out by using room temperature solution technique i.e., gel encapsulation technique. Grown crystals were confirmed by single crystal X-ray diffraction (XRD). The structure of the grown crystal belongs to orthorhombic crystal system and crystallizes in centrosymmetric space group. Kinetics of the decomposition of the grown crystals were studied by non-isothermal analysis. Thermo gravimetric / differential thermo analytical (TG/DTA) studies revealed that the grown crystal is stable upto 119 °C. The various steps involved in the thermal decomposition of the material have been analysed using Horowitz-Metzger, Coats-Redfern and Piloyan-Novikova equations for evaluating various kinetic parameters. The optical studies shows that the grown crystals possess wide transmittance in the visible region and significant optical band gap of 5.5ev with cut off wavelength of 260 nm.

Physicochemical properties of dimethylammonium p-nitrophenolate– p-nitrophenol: A nonlinear optical crystal

International Nuclear Information System (INIS)

Rathika, A.; Prasad, L. Guru; Raman, R. Ganapathi

2016-01-01

Single crystals of Dimethylammonium p-nitrophenolate–p-nitrophenol have been grown from aqueous solution by slow evaporation solution growth technique. Unit cell parameters of the grown crystal were confirmed by single crystal X-ray diffraction analysis and the synthesized compound is crystallized in monoclinic system. Various functional groups and their vibrational frequencies were recognized from the FT-IR and FT-Raman spectrum. Thermal stability of the crystal was examined by recording the TGA/DTA curve. The grown crystal has wider transparency nature in the visible region and the lower cut-off wavelength is found at 465 nm. Mechanical property of the crystal was studied by analyzing the Vicker's microhardness measurements. The fluorescence emission from the crystal is observed at 350 nm which arise due to the presence of aromatic ring. Relative SHG conversion efficiency of the grown crystal is about 0.59 times that of KDP.

Physicochemical properties of dimethylammonium p-nitrophenolate– p-nitrophenol: A nonlinear optical crystal

Energy Technology Data Exchange (ETDEWEB)

Rathika, A. [Department of Physics, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629 180 (India); Prasad, L. Guru [Departemnt of Science & Humanities, M. Kumarasamy College of Engineering, Karur (India); Raman, R. Ganapathi, E-mail: ganapathiraman83@gmail.com [Department of Physics, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629 180 (India)

2016-03-15

Single crystals of Dimethylammonium p-nitrophenolate–p-nitrophenol have been grown from aqueous solution by slow evaporation solution growth technique. Unit cell parameters of the grown crystal were confirmed by single crystal X-ray diffraction analysis and the synthesized compound is crystallized in monoclinic system. Various functional groups and their vibrational frequencies were recognized from the FT-IR and FT-Raman spectrum. Thermal stability of the crystal was examined by recording the TGA/DTA curve. The grown crystal has wider transparency nature in the visible region and the lower cut-off wavelength is found at 465 nm. Mechanical property of the crystal was studied by analyzing the Vicker's microhardness measurements. The fluorescence emission from the crystal is observed at 350 nm which arise due to the presence of aromatic ring. Relative SHG conversion efficiency of the grown crystal is about 0.59 times that of KDP.

Large-surface-area diamond (111) crystal plates for applications in high-heat-load wavefront-preserving X-ray crystal optics.

Science.gov (United States)

Stoupin, Stanislav; Antipov, Sergey; Butler, James E; Kolyadin, Alexander V; Katrusha, Andrey

2016-09-01

Fabrication and results of high-resolution X-ray topography characterization of diamond single-crystal plates with large surface area (10 mm × 10 mm) and (111) crystal surface orientation for applications in high-heat-load X-ray crystal optics are reported. The plates were fabricated by laser-cutting of the (111) facets of diamond crystals grown using high-pressure high-temperature methods. The intrinsic crystal quality of a selected 3 mm × 7 mm crystal region of one of the studied samples was found to be suitable for applications in wavefront-preserving high-heat-load crystal optics. Wavefront characterization was performed using sequential X-ray diffraction topography in the pseudo plane wave configuration and data analysis using rocking-curve topography. The variations of the rocking-curve width and peak position measured with a spatial resolution of 13 µm × 13 µm over the selected region were found to be less than 1 µrad.

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

Directory of Open Access Journals (Sweden)

Hui-Jun Guo

2014-09-01

Full Text Available Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.

Hydrothermal growth of PbSO4 (Anglesite) single crystal

International Nuclear Information System (INIS)

Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi

1994-01-01

Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)

Synthesis, growth, morphology of the semiorganic nonlinear optical crystal L-glutamic acid hydrochloride and its structural, thermal and SHG characterizations

Energy Technology Data Exchange (ETDEWEB)

Dhanasekaran, P.; Srinivasan, K. [Crystal Growth Laboratory, Department of Physics, School of Physical Sciences, Bharathiar University, Coimbatore-641 046, Tamil Nadu (India)

2012-12-15

One of the halide derivatives of L-glutamic acid which was identified as a semiorganic nonlinear optical material, L-glutamic acid hydrochloride [HOOC(CH{sub 2}){sub 2}CH(NH{sub 2})COOH.HCl], was grown as bulk single crystal and its significant properties were characterized. The stoichiometric title compound was synthesized and the solubility of its recrystallized form in DD water was determined in the temperature range 30-80 C by gravimetric method. Structural confirmation was carried out by powder X-ray diffraction study through lattice parameter verification. Optical quality smaller dimension single crystals were grown from aqueous solution by self nucleation through slow evaporation of solvent method and a large dimension single crystal was grown by slow cooling method with reversible seed rotation technique. Morphological importances of different growth facets of the as grown crystals were studied through optical goniometry. Unit cell structure of the grown crystal was refined by single crystal X-ray diffraction analysis, functional groups present in the crystal responsible for various modes of vibrations were confirmed by FTIR spectroscopy analysis, thermal stability of the grown crystal was analysed by TG/DTA and DSC and second harmonic generation (SHG) of a fundamental Nd:YAG laser beam by Kurtz technique. Results indicate that the grown crystal is in stoichiometric composition and has significant improvement in its thermal and SHG properties when compared to pure L-glutamic acid polymorphs. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystal growth and characterization of bulk Sb2Te3 topological insulator

Science.gov (United States)

Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

2018-04-01

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

Growth of dopamine crystals

Energy Technology Data Exchange (ETDEWEB)

Patil, Vidya, E-mail: vidya.patil@ruparel.edu; Patki, Mugdha, E-mail: mugdha.patki@ruparel.edu [D. G. Ruparel College, Senapati Bapat Marg, Mahim, Mumbai – 400 016 (India)

2016-05-06

Many nonlinear optical (NLO) crystals have been identified as potential candidates in optical and electro-optical devices. Use of NLO organic crystals is expected in photonic applications. Hence organic nonlinear optical materials have been intensely investigated due to their potentially high nonlinearities, and rapid response in electro-optic effect compared to inorganic NLO materials. There are many methods to grow organic crystals such as vapor growth method, melt growth method and solution growth method. Out of these methods, solution growth method is useful in providing constraint free crystal. Single crystals of Dopamine have been grown by evaporating the solvents from aqueous solution. Crystals obtained were of the size of orders of mm. The crystal structure of dopamine was determined using XRD technique. Images of crystals were obtained using FEG SEM Quanta Series under high vacuum and low KV.

Growth by the μ-PD Method and Visible Laser Operation of a Single-Crystal Fiber of Pr3+:KY3F10

Directory of Open Access Journals (Sweden)

Jun Shu

2017-07-01

Full Text Available We report on the first growth, spectroscopy, and visible laser operation of a single-crystal fiber (SCF of KY3F10 (KYF grown by the micro-pulling-down (μ-PD method, doped with Pr3+ ions. This material has a cubic lattice, which makes it appealing for use in the industry. However, KYF crystals are considered difficult to grow with high optical quality, even with well-established methods. Nevertheless, we grew a 50-mm-long SCF of Pr:KYF, which was transparent in its inner part. We studied the spectroscopic features of it in comparison with existing literature and with samples of the same crystal grown by the Czochralski method, and we did not notice any large differences. These characterizations confirmed that is indeed possible to grow high-quality crystals of Pr:KYF by the μ-PD method. Unfortunately, the crystal proved to be more brittle than typical KYF and especially difficult to polish, leading to rough and irregular facets, as evidenced by transmission measurements. Despite these issues, we obtained continuous-wave laser operation in the orange, red, and deep red regions, using a sample carved from the SCF as active medium and an InGaN-based laser diode as pump source, though with lower performances than in existing reports on this crystal.

Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

Science.gov (United States)

Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

2017-08-01

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

Synthesis and characterization of gel-grown cobalt tartrate crystals

Indian Academy of Sciences (India)

... in electronics, optics and industries. A series of pure and mixed crystals ... bility method. A few researchers reported the growth of crystals of strontium tartrate ... grow it by chemical reaction method using the gel technique. The crystallization ...

Growth, optical, electrical and photoconductivity studies of a novel nonlinear optical single crystal: Mercury cadmium chloride thiocyanate

Science.gov (United States)

Kumar, S. M. Ravi; Selvakumar, S.; Sagayaraj, P.; Anbarasi, A.

2015-02-01

SCN- ligand based organometallic non-linear optical mercury cadmium chloride thiocyanate (MCCTC) crystals are grown from water plus methanol mixed solvent by slow evaporation technique. The grown crystals are confirmed by single crystal X-ray diffraction analysis which reveals that the MCCTC belongs to rhombohedral system with R3c space group. MCCTC exhibits a SHG efficiency which is nearly 17 times more than that of KDP. The dielectric constant, dielectric loss measurements of the sample have been carried out for different frequencies (100 Hz to 5 MHz) and, temperatures (308 to 388 K) and the results are discussed. Photoconductivity study confirms that the title compound possesses negative photoconducting nature. The surface morphology of MCCTC was also investigated

Rapid growth of ZnO hexagonal prism crystals by direct microwave heating

Institute of Scientific and Technical Information of China (English)

ZHU Zhenqi; ZHOU Jian; LIU Guizhen; REN Zhiguo

2008-01-01

ZnO hexagonal prism crystals were synthesized from ZnO powders by microwave heating in a short time (within 20 min) without any metal catalyst or transport agent.Zinc oxide raw materials were made by evaporating from the high-temperature zone in an enclosure atmosphere and crystals were grown on the self-source substrate.The inherent asymmetry in microwave heating provides the temperature gradient for crystal growth.Substrate and temperature distribution in the oven show significant effects on the growth of the ZnO crystal.The morphologies demonstrate that these samples are pure hexagonal prism crystals with maximum 80 μm in diameter and 600 μm in length,which possess a well faceted end and side surface.X-ray diffraction (XRD) reveals that these samples are pure crystals.The photoluminescence (PL) exhibits strong ultraviolet emission at room temperature,indicating potential applications for short-wave light-emitting photonic devices.

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Gallium arsenide single crystal solar cell structure and method of making

Science.gov (United States)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

Directory of Open Access Journals (Sweden)

S. H. Tabatabai Yazdi

2006-03-01

Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

The influence of freezer storage of urine samples on the BONN-Risk-Index for calcium oxalate crystallization.

Science.gov (United States)

Laube, Norbert; Zimmermann, Diana J

2004-01-01

This study was performed to quantify the effect of a 1-week freezer storage of urine on its calcium oxalate crystallization risk. Calcium oxalate is the most common urinary stone material observed in urolithiasis patients in western and affluent countries. The BONN-Risk-Index of calcium oxalate crystallization risk in human urine is determined from a crystallization experiment performed on untreated native urine samples. We tested the influence of a 1-week freezing on the BONN-Risk-Index value as well as the effect of the sample freezing on the urinary osmolality. In vitro crystallization experiments in 49 native urine samples from stone-forming and non-stone forming individuals were performed in order to determine their calcium oxalate crystallization risk according to the BONN-Risk-Index approach. Comparison of the results derived from original sample investigations with those obtained from the thawed aliquots by statistical evaluation shows that i) no significant deviation from linearity between both results exists and ii) both results are identical by statistical means. This is valid for both, the BONN-Risk-Index and the osmolality data. The differences in the BONN-Risk-Index results of both procedures of BONN-Risk-Index determination, however, exceed the clinically acceptable difference. Thus, determination of the urinary calcium oxalate crystallization risk from thawed urine samples cannot be recommended.

Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Maheshwar Shrestha

2018-03-01

Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

Crystal growth and scintillation properties of Er-doped Lu{sub 3}Al{sub 5}O{sub 12} single crystals

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, Makoto, E-mail: makoto.sugiyama@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Totsuka, Daisuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-02-01

Er-doped Lu{sub 3}Al{sub 5}O{sub 12} (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under {sup 241}Am {alpha}-ray excitation indicated host emission at approximately 350 nm and Er{sup 3+} 4f-4f emissions. According to the pulse height spectra recorded under {gamma}-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The {gamma}-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 {mu}s and 6-10 {mu}s).

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

International Nuclear Information System (INIS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-01-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

Preparation and characterisation of radiation hard PbWO4 crystal scintillator

International Nuclear Information System (INIS)

Sabharwal, S.C.; Desai, D.G.; Sangeeta; Karandikar, S.C.; Chauhan, A.K.; Sangiri, A.K.; Keshwani, K.S.; Ahuja, M.N.

1996-01-01

The selective loss of one of the crystal constituents is found to be responsible for the yellowish coloration of PbWO 4 crystals. However, using the already pulled crystals as the starting charge for the subsequent growth, colorless crystals can be grown. The crystals exhibiting excellent transmission characteristics have been grown employing a low temperature gradient, a moderate rotation rate of 15 rpm and a pull speed of 1 mm/h. The colored crystals show some radiation damage on gamma irradiation, while the colorless ones remain unaffected even for irradiation doses as high as 10 Mrad. Both the types of crystals show the presence of weak thermoluminescence (TL) emission when high irradiation doses (similar 10 Mrad) are given. Only one TL glow peak is obtained in both the cases but the peak temperatures are different. The emission centers responsible for the TL emission are found to be the ones which give rise to the scintillation emission in the crystal. (orig.)

Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011)B3 single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Higuchi, Jumpei; Yabuhara, Osamu; Kirino, Fumiyoshi; Futamoto, Masaaki

2011-01-01

Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011) B3 single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar] bcc || GaAs(011)[011-bar] B3 . The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{011} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011) B3 substrates.

Growth and characterization of unidirectional benzil single crystal for photonic applications

Science.gov (United States)

Saranraj, A.; Thirupathy, J.; Dhas, S. Sahaya Jude; Jose, M.; Vinitha, G.; Dhas, S. A. Martin Britto

2018-06-01

Organic nonlinear optical benzil single crystal of fine quality with the dimensions of 168 × 14 mm2 was successfully grown in (100) plane from saturated solution by unidirectional SR method. The structural identity of the grown crystal was confirmed by powder XRD. High-resolution X-ray diffraction analysis indicates the crystalline perfection of the grown benzil crystal. The optical analysis was carried out by UV-visible spectroscopy which shows that the benzil crystal's cut off wavelength is 437 nm. The dielectric constant and dielectric loss of benzil crystal are found to be very much depending upon temperature and frequency. Ferroelectric nature of grown crystal was identified by P- E hysteresis analysis and to find the values of spontaneous polarization and coercive field. The laser damage threshold energy was studied with the help of Nd:YAG laser. The presence of third harmonic generation was identified by z-scan techniques.

Growth and characterization of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate crystals

Energy Technology Data Exchange (ETDEWEB)

Muthu, K. [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India); Bhagavannarayana, G. [National Physical Laboratory (CSIR), New Delhi 110 012 (India); Mahadevan, C.K. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India); Meenakshisundaram, S.P., E-mail: aumats2009@gmail.com [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India)

2013-05-15

Single crystals of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate K{sub 2}[Co(H{sub 2}O){sub 6}](C{sub 8}H{sub 5}O{sub 4}){sub 4}·4H{sub 2}O (PCHP), a semiorganic light-rose colored crystal of size ∼38 × 16 × 4 mm{sup 3} have been grown by slow evaporation solution growth technique. The lattice parameters of the as-grown crystals were obtained by single crystal X-ray diffraction analysis. The functional groups of the phthalate complex were confirmed by Fourier transform infrared spectroscopy analysis. The UV–Vis optical absorption spectrum of PCHP shows the lower optical cut-off at ∼300 nm and the crystal was transparent in the visible region. The structural perfection of the grown crystal has been analyzed by high-resolution X-ray diffraction (HRXRD) rocking curves (DC). The DC contains multi-peaks showing the structural grain boundaries. The dielectric, thermal and mechanical behaviors of the specimen were also studied. - Highlights: ► Bulk growth of large size phthalate complex crystals. ► Crystalline perfection of the grown crystal has been determined. ► HRXRD curves compared with pure material and the reasons are analyzed.

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

International Nuclear Information System (INIS)

Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

2011-01-01

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Growth of single crystals of BaFe12O19 by solid state crystal growth

International Nuclear Information System (INIS)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-01-01

Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

Crystal growth and characterization of a semiorganic nonlinear optical single crystal of gamma glycine

International Nuclear Information System (INIS)

Prakash, J. Thomas Joseph; Kumararaman, S.

2008-01-01

Gamma glycine has been successfully synthesized by taking glycine and potassium chloride and single crystals have been grown by solvent evaporation method for the first time. The grown single crystals have been analyzed with XRD, Fourier transform infrared (FTIR), and thermo gravimetric and differential thermal analyses (TG/DTA) measurements. Its mechanical behavior has been assessed by Vickers microhardness measurements. Its nonlinear optical property has been tested by Kurtz powder technique. Its optical behavior was examined by UV-vis., and found that the crystal is transparent in the region between 240 and 1200 nm. Hence, it may be very much useful for the second harmonic generation (SHG) applications

Characterization of growth sectors in synthetic quartz grown from cylindrical seeds parallel to [0001] direction

Directory of Open Access Journals (Sweden)

Pedro Luiz Guzzo

2004-06-01

Full Text Available In the present study, the morphology and the impurity distribution were investigated in growth sectors formed around the [0001] axis of synthetic quartz crystals. Plates containing cylindrical holes and cylindrical bars parallel to [0001] were prepared by ultrasonic machining and further used as seed-crystals. The hydrothermal growth of synthetic quartz was carried out in a commercial autoclave under NaOH solution during 50 days. The morphologies of crystals grown from cylindrical seeds were characterized by X-ray diffraction topography. For both types of crystals, +X- and X- growth sectors were distinctly observed. Infrared spectroscopy and ionizing radiation were adopted to reveal the distribution of point defects related to Si-Al substitution and OH-species. It was found a different distribution of Al-related centers in relation to the crystals grown from conventional Y-bar and Z-plate seeds.

Crystal growth, structure, defects, mechanical and spectral properties of Nd{sub 0.01}:Gd{sub 0.89}La{sub 0.1}NbO{sub 4} mixed crystal

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Lu, Wancheng; Xu, Jinrui [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Guihua; Sun, Dunlu [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China)

2017-10-15

A novel mixed laser crystal of Nd:GdLaNbO{sub 4} (Nd:GLNO) was grown successfully by conventional Czochralski method. The unit cell parameters were obtained by Rietveld refinement method. The density of the as-grown crystal was measured by Archimedean buoyancy method and calculated in theory. Absorption spectrum of Nd:GLNO crystal was recorded at room temperature, and 11 absorption peaks were assigned. The defects of Nd:GLNO crystal were revealed by using chemical etching method with phosphoric acid as etchant. The mechanical properties (including hardness, yield strength, elastic stiffness constant, fracture toughness and brittleness index) were systemically estimated based on Vickers hardness test. All these obtained results play a quite important role in further investigation of Nd:GLNO crystal. (orig.)

Crystal growth, spectroscopic and laser properties of Tm:LuAG crystal

Science.gov (United States)

Xu, X. D.; Wang, X. D.; Lin, Z. F.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Gao, C. Q.; Gao, M. W.; Xu, J.

2009-11-01

Tm:Lu3Al5O12 (Tm:LuAG) crystal was grown by the Czochralski method. The segregation coefficient was measured by Inductively Coupled Plasma Atomic Emission Spectrometer. The cell parameters were analyzed with X-ray powder diffraction experiments. The absorption and fluorescence spectra of Tm:LuAG crystal at room temperature were investigated. With a 20 W fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Tm:LuAG crystal was demonstrated. The maximum output power at 2020 nm was obtained to be 3.04 W, and the slope efficiency was 25.3%.

A low-temperature sample orienting device for single crystal spectroscopy at the SNS

Energy Technology Data Exchange (ETDEWEB)

Sherline, T E; Solomon, L; Roberts, C K II; Bruce, D; Gaulin, B; Granroth, G E, E-mail: sherlinete@ornl.gov

2010-11-01

A low temperature sample orientation device providing three axes of rotation has been successfully built and is in testing for use on several spectrometers at the spallation neutron source (SNS). Sample rotation about the vertical ({omega}) axis of nearly 360 deg. and out of plane tilts ({phi} and v) of from -3.4 deg. to 4.4 deg. and from -2.8 deg. to 3.5 deg., respectively, are possible. An off-the-shelf closed cycle refrigerator (CCR) is mounted on a room temperature sealed rotary flange providing {omega} rotations of the sample. Out-of-plane tilts are made possible by piezoelectric actuated angular positioning devices mounted on the low temperature head of the CCR. Novel encoding devices based on magnetoresistive sensors have been developed to measure the tilt stage angles. This combination facilitates single crystal investigations from room temperature to 3.1 K. Commissioning experiments of the rotating CCR for both powder and single crystal samples have been performed on the ARCS spectrometer at the SNS. For the powder sample this device was used to continuously rotate the sample and thus average out any partial orientation of the powder. The powder rings observed in S(Q) are presented. For the single crystal sample, the rotation was used to probe different regions of momentum transfer (Q-space). Laue patterns obtained from a single crystal sample at two rotation angles are presented.

Sample sufficiency of chinese pink grown in different substrates

Directory of Open Access Journals (Sweden)

Sidinei José lopes

2016-04-01

Full Text Available The cravina is an excellent plant to build up gardens due to its early flowering, abundant flowering and great performance in spring and autumn. The objective was to estimate the sample size for plant chinese pink, grown on different substrates, and check the variability of the sample size between growth parameters and production and substrates. They used seven treatments (substrates: S1 = 50% soil + 50% rice husk ash; S2 = 80% soil + 20% earthworm castings; S3 = 80% rice husk ash + 20% earthworm castings; S4 = 40% soil + 40% rice husk ash + 20% earthworm castings; S5 = 100% peat; S6 = 100% commercial substrate Mecplant®; S7 = 50% peat + 50% rice husk ash, with 56 repetitions each, totaling 392 plants of garden pink, which was evaluated in 17 of growth and production parameters. The methodology used to bootstrap resampling, with replacement, for each character within each substrate with predetermined error: 5, 10, 20 and 40% of the average (D%. To a 95% confidence interval, with D = 20%, the substrate 50% soil and 50% of rice husk ash had the largest sample size 11 characters; when comparing the characters , the number of flower buds had the highest sample size on average 113 plants. Using samples of 44 plant chinese pink for commercial substrate Mecplant® meet the lower precisions or equal to 20% for all variables. There is variation in sample size in relation to the substrate used and the variable evaluated in chinese pink plants.

Crystal growth, defects, and mechanical and spectral properties of a novel mixed laser crystal Nd:GdYNbO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Dou, Renqin [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Peng, Fang; Luo, Jianqiao; Sun, Guihua; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

2017-01-15

A mixed laser crystal of Nd-doped GYNO crystal was grown successfully by Czochralski method. The crystal belongs to monoclinic system with space group I2/a, the structural parameters are obtained by the X-ray Rietveld refinement method. The defects and dislocations along three crystallographic orientations were studied by using the chemical etching method with the phosphoric acid etchant. The mechanical properties (including hardness, yield strength, fracture toughness, and brittle index) of the crystal were estimated by Vickers hardness test. The transmission spectrum was measured at room temperature, and the absorption peaks were assigned. Spectral properties of the as-grown crystal were investigated by Judd-Ofelt theory, and the Judd-Ofelt intense parameters Ω{sub 2,4,6} were obtained to be 9.674 x 10{sup -20}, 2.092 x 10{sup -20}, and 4.061 x 10{sup -20} cm{sup 2}, respectively. (orig.)

Influence of solvents on the habit modification of alpha lactose monohydrate single crystals

Science.gov (United States)

Parimaladevi, P.; Srinivasan, K.

2013-02-01

Restricted evaporation of solvent method was adopted for the growth of alpha lactose monohydrate single crystals from different solvents. The crystal habits of grown crystals were analysed. The form of crystallization was confirmed by powder x-ray diffraction analysis. Thermal behaviour of the grown crystals was studied by using differential scanning calorimetry.

Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

CERN Document Server

Vdovin, V I; Rzaev, M M; Burbaev, T M

2002-01-01

A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

2007-07-15

2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

Purification, crystallization and preliminary X-ray diffraction studies of parakeet (Psittacula krameri) haemoglobin.

Science.gov (United States)

Jaimohan, S M; Naresh, M D; Arumugam, V; Mandal, A B

2009-10-01

Birds often show efficient oxygen management in order to meet the special demands of their metabolism. However, the structural studies of avian haemoglobins (Hbs) are inadequate for complete understanding of the mechanism involved. Towards this end, purification, crystallization and preliminary X-ray diffraction studies have been carried out for parakeet Hb. Parakeet Hb was crystallized as the met form in low-salt buffered conditions after extracting haemoglobin from crude blood by microcentrifugation and purifying the sample by column chromatography. Good-quality crystals were grown from 10% PEG 3350 and a crystal diffracted to about 2.8 A resolution. Preliminary diffraction data showed that the Hb crystal belonged to the monoclinic system (space group C2), with unit-cell parameters a = 110.68, b = 64.27, c = 56.40 A, beta = 109.35 degrees . Matthews volume analysis indicated that the crystals contained a half-tetramer in the asymmetric unit.

Growth and surface topography of WSe_2 single crystal

International Nuclear Information System (INIS)

Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2016-01-01

Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

Structural, Linear, and Nonlinear Optical and Mechanical Properties of New Organic L-Serine Crystal

Directory of Open Access Journals (Sweden)

K. Rajesh

2014-01-01

Full Text Available Nonlinear optical single crystal of organic amino acid L-Serine (LS was grown by slow evaporation technique. Solubility study of the compound was measured and metastable zone width was found. Single crystal X-ray diffraction study was carried out for the grown crystal. The linear and nonlinear optical properties of the crystal were confirmed by UV-Vis analysis and powder SHG tester. FT-IR spectrum was recorded and functional groups were analyzed. Vickers’ microhardness studies showed the mechanical strength of the grown crystal. Laser damage threshold value of the crystal was calculated. Photoconductivity studies reveal the conductivity of the crystal.

Crystal growth of emerald by flux method

International Nuclear Information System (INIS)

Inoue, Mikio; Narita, Eiichi; Okabe, Taijiro; Morishita, Toshihiko.

1979-01-01

Emerald crystals have been formed in two binary fluxes of Li 2 O-MoO 2 and Li 2 O-V 2 O 5 using the slow cooling method and the temperature gradient method under various conditions. In the flux of Li 2 O-MoO 3 carried out in the range of 2 -- 5 of molar ratios (MoO 3 /Li 2 O), emerald was crystallized in the temperature range from 750 to 950 0 C, and the suitable crystallization conditions were found to be the molar ratio of 3 -- 4 and the temperature about 900 0 C. In the flux of Li 2 O-V 2 O 5 carried out in the range of 1.7 -- 5 of molar ratios (V 2 O 5 /Li 2 O), emerald was crystallized in the temperature range from 900 to 1150 0 . The suitable crystals were obtained at the molar ratio of 3 and the temperature range of 1000 -- 1100 0 C. The crystallization temperature rised with an increase in the molar ratio of the both fluxes. The emeralds grown in two binary fluxes were transparent green, having the density of 2.68, the refractive index of 1.56, and the two distinct bands in the visible spectrum at 430 and 600nm. The emerald grown in Li 2 O-V 2 O 5 flux was more bluish green than that grown in Li 2 O-MoO 3 flux. The size of the spontaneously nucleated emerald grown in the former flux was larger than the latter, when crystallized by the slow cooling method. As for the solubility of beryl in the two fluxes, Li 2 O-V 2 O 5 flux was superior to Li 2 O-MoO 3 flux whose small solubility of SiO 2 caused an experimental problem to the temperature gradient method. The suitability of the two fluxes for the crystal growth of emerald by the flux method was discussed from the view point of various properties of above-mentioned two fluxes. (author)

Transfer phenomena in p-PbTe monocrystals grown under zero-g conditions

International Nuclear Information System (INIS)

Regel', L.L.; Rakhmatov, O.I.; Red'ko, N.A.; Parfen'ev, R.V.; AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.)

1984-01-01

The purpose of the study is comparative investigation of low-temperature phenomena of charge and heat transfer in p-PbTe monocrystals grown by the method of oriented crystallization under zero-g conditions as well as under terrestrial conditions at identical technological regimes. Investigation of thermal conductivity a strong magnetic field permits to separate lattice and electron thermal conductivity components, the latter constituting 6% of total thermal conductivity. Therefore the predominant contribution to kappa(T) is made by the lattice thermal conductivity which turned to be close by value for both samples. This points to identical character of structural perfection of p-PbTe investigated monocrystals

Synthesis, growth, structural, optical and thermal properties of a new organic nonlinear optical crystal: 2-amino 5-chloropyridinium-L-tartarate

Science.gov (United States)

Jayanalina, T.; Rajarajan, G.; Boopathi, K.; Sreevani, K.

2015-09-01

A new organic nonlinear optical crystal 2-amino-5-chloropyridinium-L-tartarate [2A5CPLTA] has been synthesized and the crystals were grown by slow evaporation solution technique at room temperature using methanol as solvent. The crystal structure of the title compound has been determined by the single crystal X-ray diffraction study and it belongs to the monoclinic system with noncentrosymmetric space group P21. The presence of functional groups was ascertained by Fourier transform infrared analysis. The transmittance and lower cut off of the grown crystal was ascertained by the UV-vis-NIR spectroscopy. Thermal studies reveled that 2A5CPLTA crystal is thermally stable up to 144 °C. The dielectric measurements of the grown crystal were carried out with different frequencies and temperatures. Vickers micro hardness measurement was carried out to study the mechanical behavior of the grown crystal. The second harmonic generation of the title crystal was confirmed by the Kurtz-Perry powder test employing the Nd: YAG laser as the source.

Pressure cryocooling protein crystals

Science.gov (United States)

Kim, Chae Un [Ithaca, NY; Gruner, Sol M [Ithaca, NY

2011-10-04

Preparation of cryocooled protein crystal is provided by use of helium pressurizing and cryocooling to obtain cryocooled protein crystal allowing collection of high resolution data and by heavier noble gas (krypton or xenon) binding followed by helium pressurizing and cryocooling to obtain cryocooled protein crystal for collection of high resolution data and SAD phasing simultaneously. The helium pressurizing is carried out on crystal coated to prevent dehydration or on crystal grown in aqueous solution in a capillary.

Crystal growth, spectral and laser properties of Nd:LuAG single crystal

International Nuclear Information System (INIS)

Xu, X D; Meng, J Q; Cheng, Y; Li, D Z; Cheng, S S; Wu, F; Zhao, Z W; Wang, X D; Xu, J

2009-01-01

Nd:LuAG (Nd:Lu 3 Al 5 O 12 ) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm 3 . The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%

Crystal growth, spectral and laser properties of Nd:LuAG single crystal

Science.gov (United States)

Xu, X. D.; Wang, X. D.; Meng, J. Q.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Xu, J.

2009-09-01

Nd:LuAG (Nd:Lu3Al5O12) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm3. The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%.

Growth of NH4Cl Single Crystal from Vapor Phase in Vertical Furnace

Science.gov (United States)

Nigara, Yutaka; Yoshizawa, Masahito; Fujimura, Tadao

1983-02-01

A pure and internally stress-free single crystal of NH4Cl was grown successfully from the vapor phase. The crystal measured 1.6 cmφ× 2 cm and had the disordered CsCl structure, which was stable below 184°C. The crystal was grown in an ampoule in a vertical furnace, in which the vapor was efficiently transported both by diffusion and convection. In line with the growth mechanism of a single crystal, the temperature fluctuation (°C/min) on the growth interface was kept smaller than the product of the temperature gradient (°C/cm) and the growth rate (cm/min). The specific heat of the crystal was measured around -31°C (242 K) during cooling and heating cycles by AC calorimetry. The thermal hysteresis (0.4 K) obtained here was smaller than that (0.89 K) of an NH4Cl crystal grown from its aqueous solution with urea added as a habit modifier.

Positron annihilation spectroscopy of vacancy aggregates in neutron-irradiated MgO crystals

International Nuclear Information System (INIS)

Pareja, R.; De La Cruz, R.M.; Gonzalez, R.; Chen, Y.; Department of Energy, Washington, DC

1992-01-01

Positron annihilation measurements in neutron-irradiated MgO crystals show that the positron lifetime is shorter than in as-grown crystals, suggesting that most of the defects produced by neutron irradiations are positively charged. The concentration of the neutral anion vacancy (possibly also the neutral anion divacancy) is estimated to be no more than ∼ 10 16 cm -3 for samples irradiated to a dose of 10 17 to 10 19 n cm -2 . Annealing experiments on the neutron-irradiated crystals show a significant increase in the positron lifetime after anneals at 900 K. The increase is attributed to positron trapping by anion-vacancy aggregates. A lifetime of (284±15)ps is tentatively assigned to positrons trapped in these aggregates. (Author)

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Synthesis, growth, and structural, optical, mechanical, electrical properties of a new inorganic nonlinear optical crystal: Sodium manganese tetrachloride (SMTC

Directory of Open Access Journals (Sweden)

M. Packiya raj

2017-01-01

Full Text Available A new inorganic nonlinear optical single crystal of sodium manganese tetrachloride (SMTC has been successfully grown from aqueous solution using the slow evaporation technique at room temperature. The crystals obtained using the aforementioned method were characterized using different techniques. The crystalline nature of the as-grown crystal of SMTC was analyzed using powder X-ray diffraction. Single-crystal X-ray diffraction revealed that the crystal belongs to an orthorhombic system with non-centrosymmetric space group Pbam. The optical transmission study of the SMTC crystal revealed high transmittance in the entire UV–vis region, and the lower cut-off wavelength was determined to be 240 nm. The mechanical strength of the as-grown crystal was estimated using the Vickers microhardness test. The second harmonic generation (SHG efficiency of the crystal was measured using Kurtz's powder technique, which indicated that the crystal has a nonlinear optical (NLO efficiency that is 1.32 times greater than that of KDP. The dielectric constant and dielectric loss of the compound were measured at different temperatures with varying frequencies. The photoconductivity study confirmed that the title compound possesses a negative photoconducting nature. The growth mechanism and surface features of the as-grown crystals were investigated using chemical etching analysis.

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

Science.gov (United States)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Improvement in the quality of hematopoietic prostaglandin D synthase crystals in a microgravity environment

International Nuclear Information System (INIS)

Tanaka, Hiroaki; Tsurumura, Toshiharu; Aritake, Kosuke; Furubayashi, Naoki; Takahashi, Sachiko; Yamanaka, Mari; Hirota, Erika; Sano, Satoshi; Sato, Masaru; Kobayashi, Tomoyuki; Tanaka, Tetsuo; Inaka, Koji; Urade, Yoshihiro

2011-01-01

Crystals of hematopoietic prostaglandin D synthase grown in microgravity show improved quality. Human hematopoietic prostaglandin synthase, one of the better therapeutic target enzymes for allergy and inflammation, was crystallized with 22 inhibitors and in three inhibitor-free conditions in microgravity. Most of the space-grown crystals showed better X-ray diffraction patterns than the terrestrially grown ones, indicating the advantage of a microgravity environment on protein crystallization, especially in the case of this protein

Effect of Metal Dopant on Ninhydrin—Organic Nonlinear Optical Single Crystals

Directory of Open Access Journals (Sweden)

R. S. Sreenivasan

2013-01-01

Full Text Available In the present work, metal (Cu2+-substituted ninhydrin single crystals were grown by slow evaporation method. The grown crystals have been subjected to single crystal XRD, powder X-ray diffraction, FTIR, dielectric and SHG studies. Single crystal X-ray diffraction analysis reveals that the compound crystallizes in monoclinic system with noncentrosymmetric space group P21 with lattice parameters a=11.28 Å, b=5.98 Å, c=5.71 Å, α=90∘, β=98.57, γ=90∘, and V=381 (Å3, which agrees very well with the reported value. The sharp and strong peaks in the powder X-ray diffraction pattern confirm the good crystallinity of the grown crystals. The presence of dopants marginally altered the lattice parameters without affecting the basic structure of the crystal. The UV-Vis transmittance spectrum shows that the crystal has a good optical transmittance in the entire visible region with lower cutoff wavelength 314 nm. The vibrational frequencies of various functional groups in the crystals have been derived from FT-IR analysis. Based on the shifts in the vibrations, the presence of copper in the lattice of the grown crystal is clearly established from the pure ninhydrin crystals. Both dielectric constant and dielectric loss decrease with the increase in frequency. The second harmonic generation efficiency was measured by employing powder Kurtz method.

Crystal Growth of Ca3Nb(Ga1−xAlx3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

Directory of Open Access Journals (Sweden)

Yuui Yokota

2015-08-01

Full Text Available Ca3Nb(Ga1−xAlx3Si2O14 (CNGAS single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

Defined PEG smears as an alternative approach to enhance the search for crystallization conditions and crystal-quality improvement in reduced screens

Energy Technology Data Exchange (ETDEWEB)

Chaikuad, Apirat, E-mail: apirat.chaikuad@sgc.ox.ac.uk [University of Oxford, Old Road Campus Research Building, Roosevelt Drive, Headington, Oxford OX3 7DQ (United Kingdom); Knapp, Stefan [University of Oxford, Old Road Campus Research Building, Roosevelt Drive, Headington, Oxford OX3 7DQ (United Kingdom); Johann Wolfgang Goethe-University, Building N240 Room 3.03, Max-von-Laue-Strasse 9, 60438 Frankfurt am Main (Germany); Delft, Frank von, E-mail: apirat.chaikuad@sgc.ox.ac.uk [University of Oxford, Old Road Campus Research Building, Roosevelt Drive, Headington, Oxford OX3 7DQ (United Kingdom)

2015-07-28

An alternative strategy for PEG sampling is suggested through the use of four newly defined PEG smears to enhance chemical space in reduced screens with a benefit towards protein crystallization. The quest for an optimal limited set of effective crystallization conditions remains a challenge in macromolecular crystallography, an issue that is complicated by the large number of chemicals which have been deemed to be suitable for promoting crystal growth. The lack of rational approaches towards the selection of successful chemical space and representative combinations has led to significant overlapping conditions, which are currently present in a multitude of commercially available crystallization screens. Here, an alternative approach to the sampling of widely used PEG precipitants is suggested through the use of PEG smears, which are mixtures of different PEGs with a requirement of either neutral or cooperatively positive effects of each component on crystal growth. Four newly defined smears were classified by molecular-weight groups and enabled the preservation of specific properties related to different polymer sizes. These smears not only allowed a wide coverage of properties of these polymers, but also reduced PEG variables, enabling greater sampling of other parameters such as buffers and additives. The efficiency of the smear-based screens was evaluated on more than 220 diverse recombinant human proteins, which overall revealed a good initial crystallization success rate of nearly 50%. In addition, in several cases successful crystallizations were only obtained using PEG smears, while various commercial screens failed to yield crystals. The defined smears therefore offer an alternative approach towards PEG sampling, which will benefit the design of crystallization screens sampling a wide chemical space of this key precipitant.

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

Science.gov (United States)

Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Wernersson, Lars-Erik; Lehmann, Sebastian; Dick, Kimberly A

2012-07-20

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal-organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420-460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures.

Growth of InAs/InP core–shell nanowires with various pure crystal structures

International Nuclear Information System (INIS)

Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Lehmann, Sebastian; Dick, Kimberly A; Wernersson, Lars-Erik

2012-01-01

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal–organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420–460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures. (paper)

Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

Science.gov (United States)

Abe, T.; Takahashi, T.; Shirai, K.

2017-02-01

In order to reveal a steady distribution structure of point defects of no growing Si on the solid-liquid interface, the crystals were grown at a high pulling rate, which Vs becomes predominant, and the pulling was suddenly stopped. After restoring the variations of the crystal by the pulling-stop, the crystals were then left in prolonged contact with the melt. Finally, the crystals were detached and rapidly cooled to freeze point defects and then a distribution of the point defects of the as-grown crystals was observed. As a result, a dislocation loop (DL) region, which is formed by the aggregation of interstitials (Is), was formed over the solid-liquid interface and was surrounded with a Vs-and-Is-free recombination region (Rc-region), although the entire crystals had been Vs rich in the beginning. It was also revealed that the crystal on the solid-liquid interface after the prolonged contact with the melt can partially have a Rc-region to be directly in contact with the melt, unlike a defect distribution of a solid-liquid interface that has been growing. This experimental result contradicts a hypothesis of Voronkov's diffusion model, which always assumes the equilibrium concentrations of Vs and Is as the boundary condition for distribution of point defects on the growth interface. The results were disscussed from a qualitative point of view of temperature distribution and thermal stress by the pulling-stop.

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

Science.gov (United States)

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Anisotropy in Ba2Cu3O4Cl2 single crystals grown by the traveling solvent floating zone method

International Nuclear Information System (INIS)

Yamada, Shigeki; Iwagaki, Yohei; Noro, Sumiko

2007-01-01

Magnetic and electrical properties of layered copper oxychloride Ba 2 Cu 3 O 4 Cl 2 single crystals are measured. Single crystal growth of Ba 2 Cu 3 O 4 Cl 2 by the traveling solvent floating zone method is attempted using Ba 3 Cu 2 O 4 Cl 2 as solvent. By optimization of the growth conditions, large single crystals of (φ5mmx30mm) of Ba 2 Cu 3 O 4 Cl 2 are grown. The resistivity with the current parallel to the c-axis is 10 2 -10 3 times larger than that with the current perpendicular to the a-axis. The temperature dependence of the dielectric spectrum for each direction is measured and analyzed by using the Debye model. The spectrum width, which is related to the effective number of electrons (n/m), does not show an appreciable dependence on temperature. The characteristic frequencies at which the dielectric constant changes, which are related to the dissipation (γ), increase with warming. The temperature dependence is almost the same as the resistivity curve. This indicates that the hopping process dominates both DC- and AC-type electrical transport. The spectrum width with the electric field parallel to the a-axis is 30 times larger than that with the electric field parallel to the c-axis. On the other hand, the characteristic frequencies do not show an appreciable dependence on electric field direction

Structural and electrical properties of organic stilbazolium single crystal of DSCHS

Science.gov (United States)

Sundaram, S. John; Raj, A. Antony; Ramaclus, Jerald V.; Sagayaraj, P.

2016-05-01

Organic nonlinear optical crystal 4-N, N-Dimethyl Amino-4'N'-Methyl-Stilbazolium 3-Carboxy-4-Hydroxy benzenesulfonate (DSCHS) has been successfully grown from aqueous methanol solution by adopting slow solvent evaporation technique. Chemical composition of the sample was confirmed by CHN analysis. Powder X-ray diffraction analysis was carried out and it shows that DSCHS crystal belongs to triclinic structure with Pl space group. It is found that this material exhibits positive photoconductivity. Dielectric studies were also carried out for different temperature by varying the frequency.

Habit control of deuterated potassium dihydrogen phosphate crystal for laser applications

Science.gov (United States)

Guzman, L. A.; Suzuki, M.; Fujimoto, Y.; Fujioka, K.

2016-03-01

In this study we investigate the habit of partially deuterated potassium dihydrogen phosphate (DKDP) crystals in the presence of Al3+ ions. We have grown single DKDP crystals in (50wt% and 80wt%) partially deuterated solutions and in solutions doped with Al3+ ions (2 ppm) by the point-seed rapid growth technique at controlled supercooling (ΔT=10°C). The growth length of each crystal face was measured and the aspect ratio was calculated. We found that crystals grown in partially deuterated solutions are similar in aspect ratio, while, crystals grown in deuterated solutions doped with Al3+ ions showed a relative change in aspect ratio, the crystal increased in size in the pyramidal direction (vertical axis direction). Crystal characteristics were also analyzed by X-ray diffraction, FTIR and Raman spectroscopy. We have speculated that the relative habit modification is due to a probably adsorption and inclusions of Al3+ ions in the prismatic section of the crystal.

Habit control of deuterated potassium dihydrogen phosphate crystal for laser applications

International Nuclear Information System (INIS)

Guzman, L A; Suzuki, M; Fujimoto, Y; Fujioka, K

2016-01-01

In this study we investigate the habit of partially deuterated potassium dihydrogen phosphate (DKDP) crystals in the presence of Al 3+ ions. We have grown single DKDP crystals in (50wt% and 80wt%) partially deuterated solutions and in solutions doped with Al 3+ ions (2 ppm) by the point-seed rapid growth technique at controlled supercooling (ΔT=10°C). The growth length of each crystal face was measured and the aspect ratio was calculated. We found that crystals grown in partially deuterated solutions are similar in aspect ratio, while, crystals grown in deuterated solutions doped with Al 3+ ions showed a relative change in aspect ratio, the crystal increased in size in the pyramidal direction (vertical axis direction). Crystal characteristics were also analyzed by X-ray diffraction, FTIR and Raman spectroscopy. We have speculated that the relative habit modification is due to a probably adsorption and inclusions of Al 3+ ions in the prismatic section of the crystal. (paper)

Crystal growth and dislocation etch pits observation of chalcopyrite CdSiP2

Science.gov (United States)

He, Zhiyu; Zhao, Beijun; Zhu, Shifu; Chen, Baojun; Huang, Wei; Lin, Li; Feng, Bo

2018-01-01

CdSiP2 is the only crystal that can offer Non-critical Phase Matching (NCPM) for a 1064 nm pumped optical parametric oscillation (OPO) with idler output in the 6 μm range. In this paper, a large, crack-free CdSiP2 single crystal measuring 18 mm in diameter and 65 mm in length was successfully grown by the Vertical Bridgman method (MVB) with an explosion-proof quartz ampoule. The results of lattice parameters, element composition and IR transmittance of the as-grown crystal characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDS) and Fourier transformation infrared spectrometer (FTIR) showed the as grown crystal crystallized well and the absorption coefficients at 4878 cm-1 and 2500 cm-1 were 0.14 cm-1 and 0.06 cm-1. Moreover, a new etchant composed of Br2, HCl, HNO3, CH3OH and H2O (1:800:800:400:400 in volume ratio) was prepared and the dislocation etch pits on oriented faces of as-grown CdSiP2 crystal were observed for the first time. It is found the etch pits are in rectangular structure on the (1 0 1) face, but in trigonal pyramid structure on (3 1 2) face. According to the quantities of the etch pits, the average densities of dislocation were evaluated to be 2.28 × 105/cm2 and 1.4 × 105/cm2, respectively.

Pyroelectric effect in tryglicyne sulphate single crystals - Differential measurement method

Science.gov (United States)

Trybus, M.

2018-06-01

A simple mathematical model of the pyroelectric phenomenon was used to explain the electric response of the TGS (triglycine sulphate) samples in the linear heating process in ferroelectric and paraelectric phases. Experimental verification of mathematical model was realized. TGS single crystals were grown and four electrode samples were fabricated. Differential measurements of the pyroelectric response of two different regions of the samples were performed and the results were compared with data obtained from the model. Experimental results are in good agreement with model calculations.

Spectroscopic ellipsometry analysis of GaAs1-xNx layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Ben Sedrine, N.; Rihani, J.; Stehle, J.L.; Harmand, J.C.; Chtourou, R.

2008-01-01

In this work, we present the effect of nitrogen incorporation on the dielectric function of GaAsN samples, grown by molecular beam epitaxy (MBE) followed by a rapid thermal annealing (for 90 s at 680 deg. C). The GaAs 1-x N x samples with N content up to 1.5% (x = 0.0%, 0.1%, 0.5%, 1.5%), are investigated using room temperature spectroscopic ellipsometry (SE). The optical transitions in the spectral region around 3 eV are analyzed by fitting analytical critical point line shapes to the second derivative of the dielectric function. It was found that the features associated with E 1 and E 1 + Δ 1 transitions are blue-shifted and become less sharp with increasing nitrogen incorporation, in contrast to the case of E 0 transition energy in GaAs 1-x N x . An increase of the split-off Δ 1 energy with nitrogen content was also obtained, in agreement to results found with MOVPE GaAs 1-x N x grown samples

The Kinetics of Crystallization of Colloids and Proteins: A Light Scattering Study

Science.gov (United States)

McClymer, Jim

2002-01-01

Hard-sphere colloidal systems serve as model systems for aggregation, nucleation, crystallization and gelation as well as interesting systems in their own right.There is strong current interest in using colloidal systems to form photonic crystals. A major scientific thrust of NASA's microgravity research is the crystallization of proteins for structural determination. The crystallization of proteins is a complicated process that requires a great deal of trial and error experimentation. In spite of a great deal of work, "better" protein crystals cannot always be grown in microgravity and conditions for crystallization are not well understood. Crystallization of colloidal systems interacting as hard spheres and with an attractive potential induced by entropic forces have been studied in a series of static light scattering experiments. Additionally, aggregation of a protein as a function of pH has been studied using dynamic light scattering. For our experiments we used PMMA (polymethylacrylate) spherical particles interacting as hard spheres, with no attractive potential. These particles have a radius of 304 nanometers, a density of 1.22 gm/ml and an index of refraction of 1.52. A PMMA colloidal sample at a volume fraction of approximately 54% was index matched in a solution of cycloheptyl bromide (CHB) and cis-decalin. The sample is in a glass cylindrical vial that is placed in an ALV static and dynamic light scattering goniometer system. The vial is immersed in a toluene bath for index matching to minimize flair. Vigorous shaking melts any colloidal crystals initially present. The sample is illuminated with diverging laser light (632.8 nanometers) from a 4x microscope objective placed so that the beam is approximately 1 cm in diameter at the sample location. The sample is rotated about its long axis at approximately 3.5 revolutions per minute (highest speed) as the colloidal crystal system is non-ergodic. The scattered light is detected at various angles using the

Purification, crystallization and preliminary X-ray diffraction studies of parakeet (Psittacula krameri) haemoglobin

International Nuclear Information System (INIS)

Jaimohan, S. M.; Naresh, M. D.; Arumugam, V.; Mandal, A. B.

2009-01-01

Parakeet (Psittacula krameri) haemoglobin has been purified and crystallized under low salt buffered conditions. Preliminary analysis of the crystal that belonged to monoclinic system (C2) is reported. Birds often show efficient oxygen management in order to meet the special demands of their metabolism. However, the structural studies of avian haemoglobins (Hbs) are inadequate for complete understanding of the mechanism involved. Towards this end, purification, crystallization and preliminary X-ray diffraction studies have been carried out for parakeet Hb. Parakeet Hb was crystallized as the met form in low-salt buffered conditions after extracting haemoglobin from crude blood by microcentrifugation and purifying the sample by column chromatography. Good-quality crystals were grown from 10% PEG 3350 and a crystal diffracted to about 2.8 Å resolution. Preliminary diffraction data showed that the Hb crystal belonged to the monoclinic system (space group C2), with unit-cell parameters a = 110.68, b = 64.27, c = 56.40 Å, β = 109.35°. Matthews volume analysis indicated that the crystals contained a half-tetramer in the asymmetric unit

Investigations on synthesis, growth and physicochemical properties of semi-organic NLO crystal bis(thiourea) ammonium nitrate for nonlinear frequency conversion

Science.gov (United States)

Anbarasi, A.; Ravi Kumar, S. M.; Sundar, G. J. Shanmuga; Mosses, M. Allen; Raj, M. Packiya; Prabhakaran, M.; Ravisankar, R.; Gunaseelan, R.

2017-10-01

Bis(thiourea) ammonium nitrate (BTAN), a new nonlinear optical crystal was grown successfully by slow evaporation technique using water as solvent at room temperature. The grown crystals were optically good quality with dimensions upto 10 × 6 × 3 mm3. Single crystal X-Ray diffraction analysis reveals that the crystal lattice is orthorhombic. From Powder X-ray diffraction analysis the diffraction planes have been indexed. The presence of the various functional groups of BTAN was identified through FTIR spectroscopic analysis. UV cut-off wavelength was observed from optical absorbance spectrum and it was found to be 240 nm. Second harmonic efficiency was determined using Kurtz powder method in comparison with KDP to confirm the nonlinearity of the material. Thermal analysis confirmed that grown crystal is thermally stable upto 184 °C. Microhardness studies show that hardness number (Hv) increases with load. Conductivity measurements such as dielectric, ac and photoconductivity were studied. Growth mechanism and surface features of the as grown single crystal was analysed by chemical etching analysis.

Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

2000-05-01

The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

Crystal growth, characterization and theoretical studies of 4-aminopyridinium picrate

Science.gov (United States)

Aditya Prasad, A.; Muthu, K.; Rajasekar, M.; Meenatchi, V.; Meenakshisundaram, S. P.

2015-01-01

Single crystals of 4-aminopyridinium picrate (APP) were grown by slow evaporation of a mixed solvent system methanol-acetone (1:1, v/v) containing equimolar quantities of 4-aminopyridine and picric acid. Structure is elucidated by single crystal XRD analysis and the crystal belongs to monoclinic system with four molecules in the unit cell (space group P21/c) and the cell parameter values are, a = 8.513 Å (±0.015), b = 11.33 Å (±0.02), c = 14.33 Å (±0.03) and β = 104.15° (±0.019), V = 1340 A3 (±6) with refined R factors R1 = 0.0053 and wR2 = 0.0126. The electron density mapping is interpreted to find coordinates for each atom in the crystallized molecules. The various functional groups present in the molecule are confirmed by FT-IR analysis. UV-visible spectral analysis was used to determine the band gap energy of 4-aminopyridinium picrate. Powder X-ray diffraction pattern reveals the crystallinity of the as-grown crystal and it closely resembles the simulated XRD from the single crystal XRD analysis. Scanning electron microscopy reveals the surface morphology of the grown crystal. Optimized geometry is derived by Hartree-Fock theory calculations and the first-order molecular hyperpolarizability (β), theoretically calculated bond length, bond angles and excited state energy from theoretical UV-vis spectrum were estimated.

Characterization of GaInSb crystal obtained by Czochralski Method

International Nuclear Information System (INIS)

Streicher, M.; Costa, E.M.; Dedavid, B.A.; Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C.

2014-01-01

The surface morphology and chemical composition of a Ga 0.93 In 0.07 Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

Characterization of GaInSb crystal obtained by Czochralski Method

Energy Technology Data Exchange (ETDEWEB)

Streicher, M.; Costa, E.M.; Dedavid, B.A. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), Porto Alegre, RS (Brazil); Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C. [Universidade de Lisboa, Sacavem (Portugal)

2014-07-01

The surface morphology and chemical composition of a Ga{sub 0.93}In{sub 0.07}Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

Single-crystal SrTiO3 fiber grown by laser heated pedestal growth method: influence of ceramic feed rod preparation in fiber quality

Directory of Open Access Journals (Sweden)

D. Reyes Ardila

1998-10-01

Full Text Available The rapidly spreading use of optical fiber as a transmission medium has created an interest in fiber-compatible optical devices and methods for growing them, such as the Laser Heated Pedestal Growth (LHPG. This paper reports on the influence of the ceramic feed rod treatment on fiber quality and optimization of ceramic pedestal processing that allows improvements to be made on the final quality in a simple manner. Using the LHPG technique, transparent crack-free colorless single crystal fibers of SrTiO3 (0.50 mm in diameter and 30-40 mm in length were grown directly from green-body feed rods, without using external oxygen atmosphere.

Macromolecular crystallization in microgravity generated by a superconducting magnet.

Science.gov (United States)

Wakayama, N I; Yin, D C; Harata, K; Kiyoshi, T; Fujiwara, M; Tanimoto, Y

2006-09-01

About 30% of the protein crystals grown in space yield better X-ray diffraction data than the best crystals grown on the earth. The microgravity environments provided by the application of an upward magnetic force constitute excellent candidates for simulating the microgravity conditions in space. Here, we describe a method to control effective gravity and formation of protein crystals in various levels of effective gravity. Since 2002, the stable and long-time durable microgravity generated by a convenient type of superconducting magnet has been available for protein crystal growth. For the first time, protein crystals, orthorhombic lysozyme, were grown at microgravity on the earth, and it was proved that this microgravity improved the crystal quality effectively and reproducibly. The present method always accompanies a strong magnetic field, and the magnetic field itself seems to improve crystal quality. Microgravity is not always effective for improving crystal quality. When we applied this microgravity to the formation of cubic porcine insulin and tetragonal lysozyme crystals, we observed no dependence of effective gravity on crystal quality. Thus, this kind of test will be useful for selecting promising proteins prior to the space experiments. Finally, the microgravity generated by the magnet is compared with that in space, considering the cost, the quality of microgravity, experimental convenience, etc., and the future use of this microgravity for macromolecular crystal growth is discussed.

Growth and characterization of La2CoMnO6 crystals doped with Pb

International Nuclear Information System (INIS)

Milenov, T.I.; Rafailov, P.M.; Abrashev, M.V.; Nikolova, R.P.; Nakatsuka, A.; Avdeev, G.V.; Veleva, M.N.; Dobreva, S.; Yankova, L.; Gospodinov, M.M.

2010-01-01

Crystals of La 2 CoMnO 6 doped with Pb were grown by the high temperature solution growth method. Several crystals were examined by scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDAX), X-ray single-crystal diffractometry and polarized Raman spectroscopy. Some variations in the composition of different crystals are observed, however, within the volume of each distinct crystal the composition is found to be fairly constant. Crystals with lateral dimensions larger than 2 mm and thicker than 1 mm contain structural defects as twin lamellae and surface roughness. The results from the characterization of the grown crystals with X-ray diffraction and Raman spectroscopy are consistent with an assumption for a coexistence of an ordered monoclinic and a disordered orthorhombic phase.

Virtual Crystallizer

Energy Technology Data Exchange (ETDEWEB)

Land, T A; Dylla-Spears, R; Thorsness, C B

2006-08-29

Large dihydrogen phosphate (KDP) crystals are grown in large crystallizers to provide raw material for the manufacture of optical components for large laser systems. It is a challenge to grow crystal with sufficient mass and geometric properties to allow large optical plates to be cut from them. In addition, KDP has long been the canonical solution crystal for study of growth processes. To assist in the production of the crystals and the understanding of crystal growth phenomena, analysis of growth habits of large KDP crystals has been studied, small scale kinetic experiments have been performed, mass transfer rates in model systems have been measured, and computational-fluid-mechanics tools have been used to develop an engineering model of the crystal growth process. The model has been tested by looking at its ability to simulate the growth of nine KDP boules that all weighed more than 200 kg.

Synthesis, crystal growth and characterization of bioactive material: 2- Amino-1H-benzimidazolium pyridine-3-carboxylate single crystal- a proton transfer molecular complex

Science.gov (United States)

Fathima, K. Saiadali; Kavitha, P.; Anitha, K.

2017-09-01

The 1:1 molecular adducts 2- Amino-1H-benzimidazolium pyridine-3-carboxylate (2ABPC) was synthesized and grown as single crystal where 2-aminobenzimidazole (ABI) acts as a donor and nicotinic acid (NA) acts as an acceptor. The presence of proton and carbon were predicted using 1H and 13C NMR spectral analysis. The molecular structure of the crystal was elucidated by subjecting the grown crystals to the single crystal x-ray diffraction analysis and was refined by full matrix least-squares method to R = 0.038 for 2469 reflections. The vibrational modes of functional group have been studied using FTIR and Raman spectroscopic analysis. The UV-Vis spectrum exhibited a visible band at 246 nm for 2ABPC due to the nicotinate anion of the molecule. Further, the antimicrobial activity of 2ABPC complex against B. subtilis, klebsiella pneumonia, Pseudomonas eruginos and E. coli pathogens was investigated. Minimum Inhibitory Concentration (MIC) for this crystal was obtained using UV spectrometer against MRSA pathogen. It was found that the benzimidazole with aminogroup at position 2 increases the general antimicrobial activities of 2ABPC crystal.

Structural and optical properties of WTe2 single crystals synthesized by DVT technique

Science.gov (United States)

Dixit, Vijay; Vyas, Chirag; Pathak, V. M.; Soalanki, G. K.; Patel, K. D.

2018-05-01

Layered transition metal di-chalcogenide (LTMDCs) crystals have attracted much attention due to their potential in optoelectronic device applications recently due to realization of their monolayer based structures. In the present investigation we report growth of WTe2 single crystals by direct vapor transport (DVT) technique. These crystals are then characterized by energy dispersive analysis of x-rays (EDAX) to study stoichiometric composition after growth. The structural properties are studied by x-ray diffraction (XRD) and selected area electron diffraction (SAED) is used to confirm orthorhombic structure of grown WTe2 crystal. Surface morphological properties of the crystals are also studied by scanning electron microscope (SEM). The optical properties of the grown crystals are studied by UV-Visible spectroscopy which gives direct band gap of 1.44 eV for grown WTe2 single crystals.

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis, spectral analysis, optical and thermal properties of new organic NLO crystal: N,N";-Diphenylguanidinium Nitrate (DPGN)

Science.gov (United States)

Saravana Kumar, G.; Murugakoothan, P.

2014-10-01

A new organic NLO material N,N";-Diphenylguanidinium Nitrate (DPGN) single crystal was grown by slow evaporation technique using methanol as solvent. Single crystal X-ray diffraction and powder X-ray diffraction experiments were carried out in order to confirm the structure and crystalline nature of DPGN crystal. Wide band gap of 3.9 eV with transmittance of 57% up to 800 nm is observed for the grown crystal using UV-vis spectral analysis. The chemical bonding and presence of various functional groups were confirmed by the FT-IR and FT-Raman spectral studies. The thermal behavior of DPGN crystal was analyzed by simultaneous TG-DTA studies. The second harmonic generation (SHG) nonlinearity of the grown crystal was measured by Kurtz and Perry powder technique and was found to be comparable with that of the standard reference material potassium dihydrogen phosphate (KDP) crystal.

Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

International Nuclear Information System (INIS)

Itoh, K.

1992-10-01

Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

Mesoscopic surface roughness of ice crystals pervasive across a wide range of ice crystal conditions

Science.gov (United States)

Magee, N. B.; Miller, A.; Amaral, M.; Cumiskey, A.

2014-11-01

Here we show high-magnification images of hexagonal ice crystals acquired by environmental scanning electron microscopy (ESEM). Most ice crystals were grown and sublimated in the water vapor environment of an FEI-Quanta-200 ESEM, but crystals grown in a laboratory diffusion chamber were also transferred intact and imaged via ESEM. All of these images display prominent mesoscopic topography including linear striations, ridges, islands, steps, peaks, pits, and crevasses; the roughness is not observed to be confined to prism facets. The observations represent the most highly magnified images of ice surfaces yet reported and expand the range of conditions in which rough surface features are known to be conspicuous. Microscale surface topography is seen to be ubiquitously present at temperatures ranging from -10 °C to -40 °C, in supersaturated and subsaturated conditions, on all crystal facets, and irrespective of substrate. Despite the constant presence of surface roughness, the patterns of roughness are observed to be dramatically different between growing and sublimating crystals, and transferred crystals also display qualitatively different patterns of roughness. Crystals are also demonstrated to sometimes exhibit inhibited growth in moderately supersaturated conditions following exposure to near-equilibrium conditions, a phenomenon interpreted as evidence of 2-D nucleation. New knowledge about the characteristics of these features could affect the fundamental understanding of ice surfaces and their physical parameterization in the context of satellite retrievals and cloud modeling. Links to supplemental videos of ice growth and sublimation are provided.

Crystal orientation and sample preparation effects on sputtering and lattice damage in 100 keV self-irradiated copper

International Nuclear Information System (INIS)

Sprague, J.A.; Malmberg, P.R.; Reynolds, G.W.; Lambert, J.M.; Treado, P.A.; Vincenz, A.M.

1987-01-01

Sputtering yields and angular distributions have been measured as functions of sample preparation techniques and incident ion-beam orientation with respect to the crystal axes for 100 keV Cu-ion beams on Cu crystals and polycrystalline samples. The angular distributions have structure requiring an nth order cosine with two Gaussians superimposed to fit the data; strong peaking is observed near the backscatter direction. The yield is dependent on the beam to crystal and beam to polycrystalline-rod axis orientation, on the grain size of the polycrystals and on sample-preparation techniques. Yield measurements vary by as much as a factor of 4. Lattice-damage differences, measured with alpha particle channeling, are much smaller and seem to be saturated by fluences of the order of 1x10 16 /cm 2 . (orig.)

Structural and electrical properties of organic stilbazolium single crystal of DSCHS

International Nuclear Information System (INIS)

Sundaram, S. John; Ramaclus, Jerald V.; Sagayaraj, P.; Raj, A. Antony

2016-01-01

Organic nonlinear optical crystal 4-N, N-Dimethyl Amino-4’N’-Methyl-Stilbazolium 3-Carboxy-4-Hydroxy benzenesulfonate (DSCHS) has been successfully grown from aqueous methanol solution by adopting slow solvent evaporation technique. Chemical composition of the sample was confirmed by CHN analysis. Powder X-ray diffraction analysis was carried out and it shows that DSCHS crystal belongs to triclinic structure with Pl space group. It is found that this material exhibits positive photoconductivity. Dielectric studies were also carried out for different temperature by varying the frequency.

Synthesis and structural characterization of bulk Sb2Te3 single crystal

Science.gov (United States)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

International Nuclear Information System (INIS)

Oliveira, Icimone Braga de

2006-01-01

In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011){sub B3} single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Higuchi, Jumpei; Yabuhara, Osamu [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

2011-09-30

Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011){sub B3} single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar]{sub bcc} || GaAs(011)[011-bar]{sub B3}. The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{l_brace}011{r_brace} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011){sub B3} substrates.

Growth and spectroscopic, thermodynamic and nonlinear optical studies of L-threonine phthalate crystal

Science.gov (United States)

Theras, J. Elberin Mary; Kalaivani, D.; Jayaraman, D.; Joseph, V.

2015-10-01

L-threonine phthalate (LTP) single crystal has been grown using a solution growth technique at room temperature. Single crystal X-ray diffraction analysis reveals that LTP crystallizes in monoclinic crystal system with space group C2/c. The optical absorption studies show that the crystal is transparent in the entire visible region with a cut-off wavelength 309 nm. The optical band gap is found to be 4.05 eV. The functional groups of the synthesized compound have been identified by FTIR spectral analysis. The functional groups present in the material were also confirmed by FT-RAMAN spectroscopy. Surface morphology and the presence of various elements were studied by SEM-EDAX analysis. The thermal stability of LTP single crystal has been analyzed by TGA/DTA studies. The thermodynamic parameters such as activation energy, entropy, enthalpy and Gibbs free energy were determined for the grown material using TG data and Coats-Redfern relation. Since the grown crystal is centrosymmetric, Z-Scan studies were carried out for analyzing the third order nonlinear optical property. The nonlinear absorption coefficient, nonlinear refractive index and susceptibility have been measured using Z-Scan technique.

Crystal growth and physical properties of Ferro-pnictides

Energy Technology Data Exchange (ETDEWEB)

Aswartham, Saicharan

2012-11-08

The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe{sub 2}As{sub 2} were grown. This pristine compound BaFe{sub 2}As{sub 2} undergoes structural and magnetic transition at T{sub S/N} = 137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as T{sub c} = 34 K with Na substitution and T{sub c} = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe{sub 2}As{sub 2}. Single crystals of LiFe{sub 1-x}Co{sub x}As with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed

Experimental and density functional theory (DFT): A dual approach to probe the key properties of creatininium L-tartrate monohydrate single crystal for nonlinear optical applications

Science.gov (United States)

Thirumurugan, R.; Babu, B.; Anitha, K.; Chandrasekaran, J.

2017-12-01

A novel organic nonlinear optical (NLO) material, creatininium L-tartrate monohydrate (CTM) was synthesized and it was grown as single crystals with optical quality. 1H and 13C NMR spectral studies were performed and molecular structure of synthesized CTM compound was confirmed. Single crystal X-ray diffraction (SXRD) analysis confirmed that CTM was crystallized in orthorhombic system with non-centrosymmetric (NCS), P212121, space group. The grown crystal exhibited admirable properties such as second harmonic generation efficiency (SHG) (1.9 times KDP), and high laser damage threshold (LDT) value of 3.7 GW cm-2. CTM crystal displayed high transparency (∼60%) in the visible and near-IR region with low cut-off wavelength at 249 nm. Photoluminescence study confirmed blue wavelength emission (∼463 nm) of grown crystal. Thermal and mechanical behaviours have been successfully analysed for grown crystals. The dielectric studies were carried out for grown crystal as a function of frequencies at different temperatures. Hirshfeld surface and fingerprint plots provided the percentage of individual interactions contributed by each atom. Moreover, density functional theory (DFT) calculations have been employed to probe the frontier molecular orbitals (FMOs) and first hyperpolarizability (β) analysis of the optimized CTM structure. These results validated CTM as a suitable NLO candidate and were discussed in this work.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Science.gov (United States)

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Growth and physico chemical characterization of lanthanum neodymium oxalate single crystals

International Nuclear Information System (INIS)

Raju, K.S.; John, Varughese; Ittyachen, M.A.

1998-01-01

Single crystals of lanthanum neodymium oxalate (LNO) are grown in sodium meta silicate gels, by the diffusion of a mixture of aqueous solutions of lanthanum nitrate and neodymium nitrate into the test tube having the set gel containing oxalic acid. The bluish pink coloured tabular crystals of LNO having well defined hexagonal basal planes appear either as foggy or clear, the latter at the greater depths inside the gel. The coloration of LNO visually observed is evidenced in UV-visible spectrum, by the revelation of well pronounced characteristic peaks in the visible region (500-900 nm). X-ray diffraction (XRD) of powdered LNO is ordered, meaning crystalline in nature, besides its isostructurality with similarly grown lanthanum samarium oxalate crystals. The single crystallinity of LNO is established by its oscillation XRD pattern. Thermogravimetric analysis (TGA) and differential scanning colorimetry (DSC) support that LNO loses water of crystallization around 120 degC and CO and CO 2 around 350-450 degC, while the infrared absorption (IR) spectrum of LNO establishes the presence of oxalate (C 2 O 4 ) 2- ions. Energy dispersive x-ray analysis (EDAX) confirms the presence of La and Nd in the sample. X-ray photoelectron spectroscopic (XPS) studies of LNO establish the presence of La and Nd in their respective oxide states. An empirical structure for LNO has been proposed on the basis of these findings. The smokiness in the foggy LNO crystal has been attributed due to the gel inclusion during the growth process. (author)

X-ray diffraction studies of NbTe 2 single crystal

Indian Academy of Sciences (India)

The composition of the grown crystals was confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and remaining structural characterization was also accomplished by X-ray diffraction (XRD) studies. Lattice parameters, volume and X-ray density have been carried out for the grown crystals. The particle size ...

Structure of a second crystal form of Bence-Jones protein Loc: Strikingly different domain associations in two crystal forms of a single protein

International Nuclear Information System (INIS)

Schiffer, M.; Ainsworth, C.; Xu, Z.B.; Carperos, W.; Olsen, K.; Solomon, A.; Stevens, F.J.; Chang, C.H.

1989-01-01

The authors have determined the structure of the immunoglobulin light-chain dimer Loc in a second crystal form that was grown from distilled water. The crystal structure was determined to 2.8-angstrom resolution; the R factor is 0.22. The two variable domains are related by local 2-fold axes and form an antigen binding pocket. The variable domain-variable domain interaction observed in this crystal form differs from the one exhibited by the protein when crystallized from ammonium sulfate in which the two variable domains formed a protrusion. The structure attained in the distilled water crystals is similar to, but not identical with, the one observed for the Mcg light-chain dimer in crystals grown from ammonium sulfate. Thus, two strikingly different structures were attained by this multisubunit protein in crystals grown under two different, commonly used, crystallization techniques. The quaternary interactions exhibited by the protein in the two crystal forms are sufficiently different to suggest fundamentally different interpretations of the structural basis for the function of this protein. This observation may have general implications regarding the use of single crystallographic determinations for detailed identification of structural and functional relationships. On the other hand, proteins whose structures can be altered by manipulation of crystallization conditions may provide useful systems for study of fundamental structural chemistry

Structural peculiarities and point defects of bulk-ZnO single crystals

International Nuclear Information System (INIS)

Kaurova, I.A.; Kuz’micheva, G.M.; Rybakov, V.B.; Cousson, A.; Gayvoronsky, V.Ya.

2014-01-01

Highlights: • ZnO single crystals of different color were grown by the hydrothermal method. • Point defects in ZnO have been firstly investigated by neutron diffraction. • Presence of additional reflections caused by kinetic growth effects was revealed. • The relationship between the color and zinc and oxygen vacancies was found. • Photoinduced variation of transmittance versus the CW laser intensity was analyzed. - Abstract: ZnO single crystals are related to promising direct wide band gap semiconductor materials belonging to the A II B VI type of compounds with wurtzite structure. “Unintentional” n-type conductivity in ZnO may be caused by zinc and oxygen vacancies, and interstitial zinc atoms. To date, the comprehensive structural investigation and analysis of point defects in ZnO is absent in literature. Green, light green and almost colorless ZnO single crystals grown by the hydrothermal method in concentrated alkali solutions 4M(KOH) + 1M(LiOH) + 0.1M(NH 4 OH) on monohedral seeds [0 0 0 1] at crystallization temperatures in the range of 330–350 °C and pressures in the range of 30–50 MPa have been firstly investigated by neutron diffraction. It was revealed the presence of additional reflections (∼12–∼16%) for all the crystals caused by kinetic growth effects that give grounds to assign them to the space group P3 rather than to P6 3 mc. Analysis of the refined compositions together with the color of ZnO crystals does not rule out the relationship between the color and vacancies in the zinc and oxygen positions whose concentration decreases with the discoloration of the samples. The analysis of the photoinduced variation of the total and on-axis transmittance versus the CW laser intensity showed that the colored samples have profound deep defects related to oxygen vacancies

Twinning structures in near-stoichiometric lithium niobate single crystals

International Nuclear Information System (INIS)

Yao, Shuhua; Chen, Yanfeng

2010-01-01

A near-stoichiometric lithium niobate single crystal has been grown by the Czochralski method in a hanging double crucible with a continuous powder supply system. Twins were found at one of the three characteristic growth ridges of the as-grown crystal. The twin structure was observed and analyzed by transmission synchrotron topography. The image shifts ΔX and ΔY in the transmission synchrotron topograph were calculated for the 3 anti 2 anti 12 and 0 anti 222 reflections based on results from high-resolution X-ray diffractometry. It is confirmed that one of the {01 anti 1 anti 2} m planes is the composition face of the twin and matrix crystals. The formation mechanism of these twins is discussed. (orig.)

Synthesis, growth, structural, optical, thermal, electrical and mechanical properties of hydrogen bonded organic salt crystal: Triethylammonium-3, 5-dinitrosalicylate

Science.gov (United States)

Rajkumar, Madhu; Chandramohan, Angannan

2017-04-01

Triethylammonium-3, 5-dinitrosalicylate, an organic salt was synthesized and single crystals grown by slow solvent evaporation solution growth technique using methanol as a solvent. The presence of various functional groups and mode of vibrations has been confirmed by FT-IR spectroscopic technique. The UV-vis-NIR Spectrum was recorded in the range 200-1200 nm to find optical transmittance window and lower cut off wavelength of the title crystal. The formation of the salt and the molecular structure was confirmed by NMR spectroscopic technique. Crystal system, crystalline nature, cell parameters and hydrogen bonding interactions of the grown crystal were determined by single crystal x-ray diffraction analysis. The thermal characteristics of grown crystal were analyzed by thermo gravimetric and differential thermal analyses. Dielectric studies were carried out to study the distribution of charges within the crystal. The mechanical properties of the title crystal were studied by Vicker's microhardness technique.

Shock initiation experiments on ratchet grown PBX 9502

Energy Technology Data Exchange (ETDEWEB)

Gustavsen, Richard L [Los Alamos National Laboratory; Thompson, Darla G [Los Alamos National Laboratory; Olinger, Barton W [Los Alamos National Laboratory; Deluca, Racci [Los Alamos National Laboratory; Bartram, Brian D [Los Alamos National Laboratory; Pierce, Timothy H [Los Alamos National Laboratory; Sanchez, Nathaniel J [Los Alamos National Laboratory

2010-01-01

This study compares the shock initiation behavior of PBX 9502 pressed to less than nominal density (nominal density is 1.890 {+-} 0.005 g/cm{sup 3}) with PBX 9502 pressed to nominal density and then ''ratchet grown'' to low density. PBX 9502 is an insensitive plastic bonded explosive consisting of 95 weight % dry-aminated tri-amino-tri-nitro-benzene (TATB) and 5 weight % Kel-F 800 plastic binder. ''Ratchet growth'' - an irreversible increase in specific volume - occurs when an explosive based on TATB is temperature cycled. The design of our study is as follows: PBX 9502, all from the same lot, received the following four treatments. Samples in the first group were pressed to less than nominal density. These were not ratchet grown and used as a baseline. Samples in the second group were pressed to nominal density and then ratchet grown by temperature cycling 30 times between -54 C and +80 C. Samples in the final group were pressed to nominal density and cut into 100 mm by 25.4 mm diameter cylinders. During thermal cycling the cylinders were axially constrained by a 100 psi load. Samples for shock initiation experiments were cut perpendicular (disks) and parallel (slabs) to the axial load. The four sample groups can be summarized with the terms pressed low, ratchet grown/no load, axial load/disks, and axial load/slabs. All samples were shock initiated with nearly identical inputs in plate impact experiments carried out on a gas gun. Wave profiles were measured after propagation through 3, 4, 5, and 6 mm of explosive. Side by side comparison of wave profiles from different samples is used as a measure of relative sensitivity. All reduced density samples were more shock sensitive than nominal density PBX 9502. Differences in shock sensitivity between ratchet grown and pressed to low density PBX 9502 were small, but the low density pressings are slightly more sensitive than the ratchet grown samples.

The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

2004-09-01

The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

Science.gov (United States)

Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2018-06-01

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

Highly oriented Bi-system bulk sample prepared by a decomposition-crystallization process

International Nuclear Information System (INIS)

Xi Zhengping; Zhou Lian; Ji Chunlin

1992-01-01

A decomposition-crystallization method, preparing highly oriented Bi-system bulk sample is reported. The effects of processing parameter, decomposition temperature, cooling rate and post-treatment condition on texture and superconductivity are investigated. The method has successfully prepared highly textured Bi-system bulk samples. High temperature annealing does not destroy the growing texture, but the cooling rate has some effect on texture and superconductivity. Annealing in N 2 /O 2 atmosphere can improve superconductivity of the textured sample. The study on the superconductivity of the Bi(Pb)-Sr-Ca-Cu-O bulk material has been reported in numerous papers. The research on J c concentrates on the tape containing the 2223 phase, with very few studies on the J c of bulk sample. The reason for the lack of studies is that the change of superconducting phases at high temperatures has not been known. The authors have reported that the 2212 phase incongruently melted at about 875 degrees C and proceeded to orient the c-axis perpendicular to the surface in the process of crystallization of the 2212 phase. Based on that result, a decomposition-crystallization method was proposed to prepare highly oriented Bi-system bulk sample. In this paper, the process is described in detail and the effects of processing parameters on texture and superconductivity are reported

Growth of single-crystal YAG fiber optics.

Science.gov (United States)

Nie, Craig D; Bera, Subhabrata; Harrington, James A

2016-07-11

Single-crystal YAG (Y3Al5O12) fibers have been grown by the laser heated pedestal growth technique with losses as low as 0.3 dB/m at 1.06 μm. These YAG fibers are as long as about 60 cm with diameters around 330 μm. The early fibers were grown from unoriented YAG seed fibers and these fibers exhibited facet steps or ridges on the surface of the fiber. However, recently we have grown fibers using an oriented seed to grow step-free fibers. Scattering losses made on the fibers indicate that the scattering losses are equal to about 30% of the total loss.

On the growth of calcium tartrate tetrahydrate single crystals

Indian Academy of Sciences (India)

Unknown

Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.

EVAPORATION FORM OF ICE CRYSTALS IN SUBSATURATED AIR AND THEIR EVAPORATION MECHANISM

OpenAIRE

ゴンダ, タケヒコ; セイ, タダノリ; Takehiko, GONDA; Tadanori, SEI

1987-01-01

The evaporation form and the evaporation mechanism of dendritic ice crystals grown in air of 1.0×(10)^5 Pa and at water saturation and polyhedral ice crystals grown in air of 4.0×10 Pa and at relatively low supersaturation are studied. In the case of dendritic ice crystals, the evaporation preferentially occurs in the convex parts of the crystal surfaces and in minute secondary branches. On the other hand, in the case of polyhedral ice crystals, the evaporation preferentially occurs in the pa...

Bulk crystal growth and nonlinear optical characterization of semiorganic single crystal: Cadmium (II) dibromide L - Proline monohydrate

Energy Technology Data Exchange (ETDEWEB)

Balakrishnan, T., E-mail: balacrystalgrowth@gmail.com [Crystal Growth Laboratory, PG & Research Department of Physics, Periyar EVR College (Autonomous), Tiruchirappalli, 620 023, Tamil Nadu (India); Sathiskumar, S. [Crystal Growth Laboratory, PG & Research Department of Physics, Periyar EVR College (Autonomous), Tiruchirappalli, 620 023, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, SRM University, Kattankulathur, 603 203, Kancheepuram, Tamil Nadu (India); Thamotharan, S. [Department of Bioinformatics, School of Chemical and Biotechnology, SASTRA University, Thanjavur, 613 401 (India)

2017-01-15

Single crystal of a novel metal organic nonlinear optical (NLO) cadmium (II) dibromide L - proline monohydrate (CBLPM) of size 7 × 7 × 5 mm{sup 3} was grown from slow evaporation technique. Single crystal X – ray diffraction analysis reveals that the crystal belongs to orthorhombic system with lattice parameters a = 10.1891 (8) Å, b = 13.4961 (11) Å, c = 7.4491 (5) Å and space group P2{sub 1}2{sub 1}2{sub 1}. The powder X – ray diffraction pattern of CBLPM was recorded and the X – ray diffraction peaks were indexed. The various functional groups of CBLPM were identified by the FT – IR and FT – Raman spectral analyses. The optical transmittance window and lower cut off wavelength of CBLPM were identified from UV – Vis – NIR studies. The mechanical strength of the grown crystal was estimated using Vickers microhardness test. Dielectric constant and dielectric loss measurements were carried out at different temperatures in the frequency range of 50 Hz - 2 MHz. The photoluminescence spectrum was recorded in the wavelength range 200–400 nm and the estimated optical band gap was ∼4.1 eV. Etching studies were carried out for different etching time. Thermal stability of CBLPM was determined using thermogravimetric analysis. Laser induced damage threshold study was carried out for the grown crystal using Nd:YAG laser. Size dependent second harmonic generation efficiency of the grown crystal was determined by Kurtz and Perry powder technique with different particle size using Nd:YAG laser with wavelength 1064 nm. Second harmonic generation efficiency of the powdered CBLPM crystal was ∼2.3 times that of potassium dihydrogen orthophosphate. - Highlights: • CBLPM crystal belongs to orthorhombic crystal system with space group P2{sub 1}2{sub 1}2{sub 1.} • Transmittance of CBLPM is ∼80% in the 650–1100 nm range. • Powder SHG efficiency of CBLPM increases with increase in particle size. • SHG efficiency of 0.57 μm size powdered CBLPM is ∼2

Defect characterization of Ga4Se3S layered single crystals by ...

Indian Academy of Sciences (India)

Trapping centres in undoped Ga 4 Se 3 S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low temperature range of 15−300 K. After illuminating the sample with blue light (∼470 nm) at 15 K, TL glow curve exhibited one peak ...

Electronic and magnetic properties of triple-layered ruthenate Sr4Ru3O10 single crystals grown by a floating-zone method

International Nuclear Information System (INIS)

Zhou, M.; Hooper, J.; Fobes, D.; Mao, Z.Q.; Golub, V.; O'Connor, C.J.

2005-01-01

We have grown high-quality single crystals of the triple-layered perovskite ruthenate Sr 4 Ru 3 O 10 using a floating-zone (FZ) method and measured their electronic transport and magnetic properties. Our experiments results are consistent with those previously reported for Sr 4 Ru 3 O 10 flux crystals; the magnetic ground state of Sr 4 Ru 3 O 10 is poised between an itinerant metamagnetic and itinerant ferromagnetic state, and its electronic ground state is a Fermi liquid. In addition, we have investigated the effect of disorder on the metallic state of Sr 4 Ru 3 O 10 . From resistivity measurements of various Sr 4 Ru 3 O 10 crystals with different levels of disorder, we found that disorder enhances both temperature-independent elastic scattering and also temperature-dependent inelastic scattering. The in-plane metamagnetic transition is also found to be sensitive to disorder. Disorder results in an increase in the metamagnetic transition field and different magnetic behavior above the transition. We discuss the implications of this interesting observation

Single crystal growth and structural evolution across the 1st order valence transition in (Pr1-yYy)1-xCaxCoO3-δ

Science.gov (United States)

Schreiber, N. J.; Zhang, Junjie; Zheng, Hong; Freeland, J. W.; Chen, Yu-Sheng; Mitchell, J. F.; Phelan, D.

2017-10-01

Praseodymium-containing cobalt perovskites, such as (Pr1-yYy)1-xCaxCoO3-δ, have been argued to undergo a first-order charge shift between Pr and hybridized Co-O orbitals that leads to a metal-insulator transition at a temperature, TVT. Magnetization and x-ray absorption spectroscopy measurements on single crystals of (Pr0.85Y0.15)0.7Ca0.3CoO3-δ grown in an IR image furnace under 40-60 bar of oxygen confirm the presence of this valence transition. Single crystal x-ray synchrotron diffraction measurements are consistent with an isomorphic phase transition at TVT. No evidence of charge ordering was revealed by the single crystal diffraction. Dissimilar to analytical transmission electron microscopy measurements performed on a grain from a polycrystalline sample that revealed an oxygen vacancy order-disorder transition at TVT, the present single-crystal measurements did not evidence such a transition, likely reflecting a lower density of oxygen vacancies in the high-pO2 grown single crystals.

Hydrogen concentration and distribution in high-purity germanium crystals

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.; Luke, P.N.

1981-10-01

High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10 15 cm -3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium β-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H 2 with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10 7 cm -3 and are estimated to contain 10 8 H atoms each

Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

Science.gov (United States)

2016-03-30

10-6 Torr ). In this low-pressure oxygen environment, Auger electron spectroscopy (AES) study shows that while oxidation of the base layer is...three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr . First, a 120~150 nm thick...high-temperature annealing in order to crystallize the amorphous AlOx into a single-crystal Al2O3. After the sample was cooled to room temperature

Growth and study of barium oxalate single crystals in agar gel

Indian Academy of Sciences (India)

Barium oxalate was grown in agar gel at ambient temperature. The effect of various parameters like gel concentration, gel setting time and concentration of the reactants on the growth of these crystals was studied. Prismatic platy shaped spherulites and dendrites were obtained. The grown crystals were characterized by ...

A novel organic nonlinear optical crystal: Creatininium succinate

Energy Technology Data Exchange (ETDEWEB)

Thirumurugan, R.; Anitha, K., E-mail: singlecerystalxrd@gmail.ciom [School of Physics, Madurai Kamraj University, Madurai 625021 (India)

2015-06-24

A novel organic material complex of creatininium succinate (CS) has been synthesized and single crystals were grown by the reaction of creatinine and succinic acid from aqueous solution by employing the technique of slow evaporation at room temperature. The structure of the grown crystal has been elucidated using single crystal X-ray diffraction analysis and the structure was refined by least-squares method to R = 0.027 for 1840 reflections. FT-IR spectral investigation has been carried out to identify the various functional groups in the title compound. UV–Vis transmission was carried out which shows the crystal has a good optical transmittance in the visible region with lower cutoff wavelength around 220 nm. Nonlinear optical property of the crystal was confirmed by Kurtz-Perry powder technique.

Effect of rare-earth dopants on the growth and structural, optical, electrical and mechanical properties of L-arginine phosphate single crystals

International Nuclear Information System (INIS)

Arjunan, S.; Bhaskaran, A.; Kumar, R. Mohan; Mohan, R.; Jayavel, R.

2010-01-01

Research highlights: → Thorium, Lanthanum and Cerium rare-earth ions were doped with L-arginine phosphate material and the crystals were grown by slow evaporation technique. → The transparency of the rare-earth doped LAP crystals has enhanced compared to pure LAP. → The powder SHG measurements revealed that the SHG output of rare-earth doped LAP crystals increases considerably compared to that of LAP. → Vicker's hardness number of as-grown crystal of LAP is higher than that of rare-earth doped LAP crystals. - Abstract: Effect of Thorium, Lanthanum and Cerium rare-earth ions on the growth and properties of L-arginine phosphate single crystals has been reported. The incorporation of rare-earth dopants into the L-arginine phosphate crystals is confirmed by Inductively Coupled Plasma-Mass Spectroscopy analysis. The unit cell parameters for pure and rare-earth doped L-arginine phosphate crystals have been estimated by powder X-ray diffraction studies. UV-visible studies revealed the transmittance percentage and cut-off wavelengths of the grown crystals. Powder second harmonic generation measurement has been carried out for pure and doped L-arginine phosphate crystals. The dielectric behavior of the grown crystals was analyzed for different frequencies at room temperature. The mechanical properties have been determined for pure and the doped L-arginine phosphate crystals.