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Sample records for s-band sic mesfets

  1. Assessment of intrinsic small signal parameters of submicron SiC MESFETs

    Science.gov (United States)

    Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

    2018-01-01

    In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

  2. Raman Channel Temperature Measurement of SiC MESFET as a Function of Ambient Temperature and DC Power

    Science.gov (United States)

    Ponchak, George E.; Eldridge, Jeffrey J.; Krainsky, Isay L.

    2009-01-01

    Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.

  3. SiC for microwave power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-16

    The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

  4. The high dose response of silicon carbide MESFET; Reponse d'un transistor MESFET SiC irradie a de tres fortes doses cumulees

    Energy Technology Data Exchange (ETDEWEB)

    Brisset, C.; Picard, C.; Joffre, F. [CEA Saclay, Dept. d' Electronique et d' Instrumentation Nucleaire, LETI, 91 - Gif-sur-Yvette (France); Noblanc, O.; Brylinski, C. [Thomson-CSF Lab. Central de Recherches, 91 - Orsay (France)

    1999-07-01

    The performance of MESFET-SiC transistors submitted to {sup 60}Co gamma radiation has been studied. MESFETs irradiated in the passing mode present a satisfactorily behaviour till cumulated dose below 10 MGy(Si). The off-state operating mode is the most unfavourable, in this case a complete loss of functionality was observed, followed by a slow comeback to an almost normal functioning after several months of rest. (A.C.)

  5. Advances in SiC materials and devices: an industrial point of view

    Energy Technology Data Exchange (ETDEWEB)

    Siergiej, R.R.; Clarke, R.C.; Sriram, S.; Agarwal, A.K.; Bojko, R.J.; Morse, A.W.; Balakrishna, V.; MacMillan, M.F.; Brandt, C.D. [Northrop Grumman ESSS Sci. and Technol. Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman ESSS Adv. Technol. Lab. Baltimore, MD (United States)

    1999-07-30

    Silicon carbide (SiC) is an emerging semiconductor that has proven itself especially well-suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance. In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed (1) semi-insulating for MESFETs, and (2) highly conducting boules for SITs and power switches. Very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5{mu}m h{sup -1} exhibiting unintentional n-type doping of {proportional_to}1 x 10{sup 15} cm{sup -3}, and room temperature Hall mobilities of {proportional_to}1000 cm{sup 2} V{sup -1} s{sup -1}. Controlled n-type doping between {proportional_to}5 x 10{sup 15} cm{sup -3} and >1 x 10{sup 19} cm{sup -3} has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS turn-off thyristors (MTO{sup TM}) are being investigated as power switches because they offer ease of turn-off, 500 C operation and reduced cooling requirements. In the fabrication of high-power, high-frequency transistors at UHF, L-, S-, and X-bands SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistor packages have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-band. (orig.)

  6. Kronig-Penney-like description for band gap variation in SiC polytypes

    NARCIS (Netherlands)

    Backes, W.H.; Nooij, de F.C.; Bobbert, P.A.; van Haeringen, W.

    1996-01-01

    A one-dimensional Kronig-Penney-like model for envelope wave functions is presented to explain the band gap variation of SiC polytypes. In this model the envelope functions obey discontinuous boundary conditions. The electronic band gaps of cubic and several hexagonal and rhombohedral SiC polytypes

  7. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    Science.gov (United States)

    Hema Lata Rao, M.; Narasimha Murty, N. V. L.

    2015-01-01

    An improved analytical model for the current—voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.

  8. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    International Nuclear Information System (INIS)

    Rao, M. Hema Lata; Murty, N. V. L. Narasimha

    2015-01-01

    An improved analytical model for the current—voltage (I–V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I–V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I–V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates. (semiconductor devices)

  9. Stability and electronic properties of SiC nanowire adsorbed on MoS{sub 2} monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Munish, E-mail: munishsharmahpu@live.com; Pooja,; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India); Kumar, Ashok [Department of Physics, Panjab University, Chandigarh, 160014 (India)

    2015-06-24

    Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS{sub 2} monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.

  10. Halogenation of SiC for band-gap engineering and excitonic functionalization

    Science.gov (United States)

    Drissi, L. B.; Ramadan, F. Z.; Lounis, S.

    2017-11-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose-Einstein condensation.

  11. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  12. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    International Nuclear Information System (INIS)

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  13. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is...

  14. SOI MESFETs for Extreme Environment Electronics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

  15. Strain-engineered band parameters of graphene-like SiC monolayer

    International Nuclear Information System (INIS)

    Behera, Harihar; Mukhopadhyay, Gautam

    2014-01-01

    Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices

  16. Modulation of low-frequency oscillations in GaAs MESFETs' channel current by sidegating bias

    Institute of Scientific and Technical Information of China (English)

    DING Yong; LU Shengli; ZHAO Fuchuan

    2005-01-01

    Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET's output characteristics. This paper studies the oscillations by testing the MESFET's output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC's.

  17. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

    International Nuclear Information System (INIS)

    Liu, J.L.; Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.

    2013-01-01

    Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm 2 /V s and the carrier density of 1.096 × 10 13 cm −2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (f T ) of 5 GHz and the maximum oscillation frequency (f max ) of 6 GHz at V GS = −0.5 V and V DS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.

  18. Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study

    National Research Council Canada - National Science Library

    Sitar, Zlatko; Collazo, Ramon

    2007-01-01

    This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs...

  19. Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies

    Science.gov (United States)

    Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

    2018-01-01

    III-V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III-V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.

  20. Optimization of the doping profile of a MESFET, realized by ion implantation

    International Nuclear Information System (INIS)

    Cazaux, J.L.; Graffeuil, J.; Pavlidis, D.

    1986-01-01

    A method is proposed to investigate the influence of doping profiles on the performance of GaAs Field Effect Transistors. We consider in particular the effect of different ion implantation energies and doses, as well as, the influence of gate recess. The static and dynamic small signal characteristics of GaAs MESFETs with non-uniform doping profiles are studied by combining analytical and numerical techniques to reduce calculation time. Details of the FET analysis and computer simulation are presented. Results are compared with experimental data obtained from FETs with different implantation conditions and gate recess depths. The influence of the doping profile on the equivalent circuit elements of GaAs MESFETs is finally investigated in view of an optimization of their microwave properties [fr

  1. Light effect in photoionization of traps in GaN MESFETs

    Directory of Open Access Journals (Sweden)

    H. Arabshahi

    2009-09-01

    Full Text Available Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible for current collapse in GaN MESFET at low temperatures. These electrical traps degrade the performance of the device at low temperature. On the opposite, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built in electric field associated with the trapped charge distribution. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including trapping center effects show close agreement with the available experimental data.

  2. Ion induced charge collection in GaAs MESFETs

    International Nuclear Information System (INIS)

    Campbell, A.; Knudson, A.; McMorrow, D.; Anderson, W.; Roussos, J.; Espy, S.; Buchner, S.; Kang, K.; Kerns, D.; Kerns, S.

    1989-01-01

    Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution

  3. The influence of various dielectric parameters on the reststrahlen region of SiC

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Rooyen, I.J. van

    2011-01-01

    The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: → An anomalous peak observed in the reststrahlen band of SiC was investigated. → The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. → The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. → Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

  4. The influence of various dielectric parameters on the reststrahlen region of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); National Laser Centre, CSIR, PO Box 395, Pretoria 0001 (South Africa)

    2011-02-01

    The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: {yields} An anomalous peak observed in the reststrahlen band of SiC was investigated. {yields} The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. {yields} The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. {yields} Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

  5. Characteristics of GaAs MESFET inverters exposed to high energy neutrons

    International Nuclear Information System (INIS)

    Bloss, W.L.; Yamada, W.E.; Young, A.M.; Janousek, B.K.

    1988-01-01

    GaAs MESFET circuits have been exposed to high energy neutrons with fluences ranging from 1x10/sup 14/ n/cm/sup 2/ to 2x10/sup 15/ m/cm/sup 2/. Discrete transistors, inverters, and ring oscillators were characterized at each fluence. While the MESFETs exhibit significant threshold voltage shifts and transconductance and saturation current degradation over this range of neutron fluences, the authors have observed improvement in the DC characteristics of Schottky Diode FET Logic (SDFL) inverters. This unusual result has been successfully simulated using device parameters extracted from FETs damaged by exposure to high energy neutrons. Although the decrease in device transconductance results in an increase in inverter gate delay, as reflected in ring oscillator frequency measurements, the authors conclude that GaAs ICs fabricated from this logic family will remain functional after exposure to extreme neutron fluences. This is a consequence of the observed improvement in inverter noise margin evident in both measured and simulated circuit performance

  6. A new physics-based self-heating effect model for 4H-SiC MESFETs

    International Nuclear Information System (INIS)

    Cao Quanjun; Zhang Yimen; Zhang Yuming

    2008-01-01

    A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I – V curves with the self-heating effect is obtained. (condensed matter: electronic structure, electrical, magnetic, and optical propertiesx)

  7. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

    Directory of Open Access Journals (Sweden)

    Zheng Huang

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

  8. SOI MESFETs on high-resistivity, trap-rich substrates

    Science.gov (United States)

    Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

    2018-04-01

    The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

  9. High efficiency battery converter with SiC devices for residential PV systems

    DEFF Research Database (Denmark)

    Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

    2013-01-01

    The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench...

  10. Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Niels Ole

    1976-01-01

    Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

  11. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    International Nuclear Information System (INIS)

    Johansson, Leif I.; Xia, Chao; Virojanadara, Chariya

    2015-01-01

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10 14  cm −2 after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene

  12. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    Energy Technology Data Exchange (ETDEWEB)

    Johansson, Leif I., E-mail: lij@ifm.liu.se; Xia, Chao; Virojanadara, Chariya [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  13. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  14. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

    Science.gov (United States)

    Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

    2018-05-28

    Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Characteristics of Fabricated SiC Neutron Detectors for Neutron Flux Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Ha, Jang Ho; Park, Se Hwan; Lee, Kyu Hong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Cheol Ho [Hanyang University, Seoul (Korea, Republic of)

    2011-05-15

    An SPND (Self-powered Neutron Detector) is commonly used for neutron detection in NPP (Nuclear Power Plant) by virtue of un-reactivity for gamma-rays. But it has a drawback, which is that it cannot detect neutrons in real time due to beta emissions (about > 48 s) after reactions between neutrons and {sup 103}Rh in an SPND. And Generation IV reactors such as MSR (Molten-salt reactor), SFR (Sodium-cooled fast reactor), and GFR (Gas-cooled fast reactor) are designed to compact size and integration type. For GEN IV reactor, neutron monitor also must be compact-sized to apply such reactor easily and much more reliable. The wide band-gap semiconductors such as SiC, AlN, and diamond make them an attractive alternative in applications in harsh environments by virtue of the lower operating voltage, faster charge-collection times compared with gas-filled detectors, and compact size.1) In this study, two PIN-type SiC semiconductor neutron detectors, which are for fast neutron detection by elastic and inelastic scattering SiC atoms and for thermal neutron detection by charged particle emissions of 6LiF reaction, were designed and fabricated for NPP-related applications. Preliminary tests such as I-V and alpha response were performed and neutron responses at ENF in HANARO research reactor were also addressed. The application feasibility of the fabricated SiC neutron detector as an in-core neutron monitor was discussed

  16. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  17. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  18. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi

    2009-01-01

    A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current–voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs

  19. BAND STRUCTURE OF NON-STEIOCHIOMETRIC LARGE-SIZED NANOCRYSTALLITES

    Directory of Open Access Journals (Sweden)

    I.V.Kityk

    2004-01-01

    Full Text Available A band structure of large-sized (from 20 to 35nm non-steichiometric nanocrystallites (NC of the Si2-xCx (1.04 < x < 1.10 has been investigated using different band energy approaches and a modified Car-Parinello molecular dynamics structure optimization of the NC interfaces. The non-steichiometric excess of carbon favors the appearance of a thin prevailingly carbon-contained layer (with thickness of about 1 nm covering the crystallites. As a consequence, one can observe a substantial structure reconstruction of boundary SiC crystalline layers. The numerical modeling has shown that these NC can be considered as SiC reconstructed crystalline films with thickness of about 2 nm covering the SiC crystallites. The observed data are considered within the different one-electron band structure methods. It was shown that the nano-sized carbon sheet plays a key role in a modified band structure. Independent manifestation of the important role played by the reconstructed confined layers is due to the experimentally discovered excitonic-like resonances. Low-temperature absorption measurements confirm the existence of sharp-like absorption resonances originating from the reconstructed layers.

  20. Characterization of a n+3C/n−4H SiC heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, R. A.; Mihaila, A. [Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-Dättwil (Switzerland); Farkas, I.; Hsu, C.-W.; Janzén, E. [Semiconductor Materials, IFM, Linköping University, SE-58183 Linköping (Sweden); Teodorescu, V. S. [National Institute of Material Physics, R-077125 Bucharest-Măgurele (Romania); Afanas' ev, V. V. [Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven (Belgium); Rahimo, M. [ABB Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg (Switzerland)

    2016-04-04

    We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.

  1. Growth and characterization of high-purity SiC single crystals

    Science.gov (United States)

    Augustine, G.; Balakrishna, V.; Brandt, C. D.

    2000-04-01

    High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

  2. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  3. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  4. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

    International Nuclear Information System (INIS)

    Riedl, C; Coletti, C; Starke, U

    2010-01-01

    Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This paper reviews the controlled growth of epitaxial graphene layers on SiC(0 0 0 1) and the manipulation of their electronic structure. We show that epitaxial graphene on SiC grows on top of a carbon interface layer that-although it has a graphite-like atomic structure-does not display the linear π-bands typical for graphene due to a strong covalent bonding to the substrate. Only the second carbon layer on top of this interface acts like monolayer graphene. With a further carbon layer, a graphene bilayer system develops. During the growth of epitaxial graphene on SiC(0 0 0 1) the number of graphene layers can be precisely controlled by monitoring the π-band structure. Experimental fingerprints for in situ growth control could be established. However, due to the influence of the interface layer, epitaxial graphene on SiC(0 0 0 1) is intrinsically n-doped and the layers have a long-range corrugation in their density of states. As a result, the Dirac point energy where the π-bands cross is shifted away from the Fermi energy, so that the ambipolar properties of graphene cannot be exploited. We demonstrate methods to compensate and eliminate this structural and electronic influence of the interface. We show that the band structure of epitaxial graphene on SiC(0 0 0 1) can be precisely tailored by functionalizing the graphene surface with tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) molecules. Charge neutrality can be achieved for mono- and bilayer graphene. On epitaxial bilayer graphene, where a band gap opens due to the asymmetric electric field across the layers imposed by the interface, the magnitude of this band gap

  5. Passivation of hexagonal SiC surfaces by hydrogen termination

    International Nuclear Information System (INIS)

    Seyller, Thomas

    2004-01-01

    Surface hydrogenation is a well established technique in silicon technology. It is easily accomplished by wet-chemical procedures and results in clean and unreconstructed surfaces, which are extremely low in charged surface states and stable against oxidation in air, thus constituting an ideal surface preparation. As a consequence, methods for hydrogenation have been sought for preparing silicon carbide (SiC) surfaces with similar well defined properties. It was soon recognized, however, that due to different surface chemistry new ground had to be broken in order to find a method leading to the desired monatomic hydrogen saturation. In this paper the results of H passivation of SiC surfaces by high-temperature hydrogen annealing will be discussed, thereby placing emphasis on chemical, structural and electronic properties of the resulting surfaces. In addition to their unique properties, hydrogenated hexagonal SiC {0001} surfaces offer the interesting possibility of gaining insight into the formation of silicon- and carbon-rich reconstructions as well. This is due to the fact that to date hydrogenation is the only method providing oxygen-free surfaces with a C to Si ratio of 1:1. Last but not least, the electronic properties of hydrogen-free SiC {0001} surfaces will be alluded to. SiC {0001} surfaces are the only known semiconductor surfaces that can be prepared in their unreconstructed (1 x 1) state with one dangling bond per unit cell by photon induced hydrogen desorption. These surfaces give indications of a Mott-Hubbard surface band structure

  6. Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

    Science.gov (United States)

    Alghunaim, Naziha Suliman

    2018-06-01

    Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

  7. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  8. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  9. Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

    Science.gov (United States)

    Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

    2018-03-01

    First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

  10. Rare earth element abundances in presolar SiC

    Science.gov (United States)

    Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

    2018-01-01

    Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

  11. L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

    Science.gov (United States)

    Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

    2017-12-01

    There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

  12. New Possibilities of Power Electronic Structures Using SiC Technology

    Directory of Open Access Journals (Sweden)

    Robert Sul

    2006-01-01

    Full Text Available This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the beginning of 80’s, also at our university.

  13. A Grande Reportagem no contexto informativo SIC

    OpenAIRE

    Colaço, Vanessa Alexandra Francisco

    2014-01-01

    Os telespectadores querem ver grandes reportagens? Como evoluíram as audiências da Grande Reportagem SIC? É este o produto premium da estação? Terá este formato um investimento e continuidade garantidas? Estas são algumas das questões formuladas e às quais se procurou dar resposta neste Relatório de Estágio. Neste trabalho traça-se o perfil do programa Grande Reportagem SIC, clarificando a linha editorial que lhe serviu de base, procurando perceber as suas dinâmicas e passando em revista mome...

  14. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  15. Thermal radiative properties of a photonic crystal structure sandwiched by SiC gratings

    International Nuclear Information System (INIS)

    Wang, Weijie; Fu, Ceji; Tan, Wenchang

    2014-01-01

    Spectral and directional control of thermal emission holds substantial importance in applications where heat transfer is predominantly by thermal radiation. In this work, we investigate the spectral and directional properties of thermal emission from a novel structure, which is constituted with a photonic crystal (PC) sandwiched by SiC gratings. Numerical results based on the RCWA algorithm reveal that greatly enhanced emissivity can be achieved in a broad frequency band and in a wide range of angle of emission. This promising emission feature is found to be caused by excitation of surface phonon polaritons (SPhPs), PC mode, magnetic polaritons (MPs) and Fabry–Pérot resonance from high order diffracted waves, as well as the coupling between different resonant modes. We show that the broad enhanced emissivity band can be manipulated by adjusting the dimensional parameters of the structure properly. -- Highlights: ► We propose a novel structure made of a photonic crystal sandwiched by SiC gratings. ► High emissivity can be achieved in a broad spectral band and angle range. ► We explain the result by excitation of multiple excited modes and their coupling

  16. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  17. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun; Kaloni, T. P.; Huang, G. S.; Schwingenschlö gl, Udo

    2011-01-01

    and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p

  18. Structural stabilities and electronic properties of fully hydrogenated SiC sheet

    International Nuclear Information System (INIS)

    Wang, Xin-Quan; Wang, Jian-Tao

    2011-01-01

    The intriguing structural and electronic properties of fully hydrogenated SiC honeycomb sheet are studied by means of ab initio calculations. Based on structure optimization and phonon dispersion analysis, we find that both chair-like and boat-like configurations are dynamically stable, and the chair-like conformer is energetically more favored with an energy gain of 0.03 eV per C atom relative to the boat-like one. The chair-like and boat-like conformers are revealed to be nonmagnetic semiconductors with direct band gaps of 3.84 and 4.29 eV, respectively, both larger than 2.55 eV of pristine SiC sheet. The charge density distributions show that the bondings are characterized with covalency for both chair-like and boat-like conformers. -- Highlights: → Structural and electronic properties of fully hydrogenated SiC sheet are studied. → Both chair-like and boat-like configurations are dynamically stable. → While the chair-like conformer is energetically more favored. → The chair-like and boat-like conformers are nonmagnetic semiconductors. → The bondings are characterized with covalency.

  19. Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

    Energy Technology Data Exchange (ETDEWEB)

    Vickridge, I.C. E-mail: vickridge@gps.jussieu.fr; Tromson, D.; Trimaille, I.; Ganem, J.-J.; Szilagyi, E.; Battistig, G

    2002-05-01

    SiC is a large band gap semiconductor, promising for high power and high frequency devices. The thermal oxide is SiO{sub 2} however the growth rates of thermal oxide on SiC are substantially slower than on Si, and different along the polar directions (<0 0 0 1-bar> and <0 0 0 1> in the hexagonal polytypes). Thorough understanding of the oxide growth mechanisms may give us new insights into the nature of the SiO{sub 2}/SiC interface, crucial for device applications. We have determined growth kinetics for ultra-dry thermal oxidation of 6H SiC at 1100 deg. C for pressures from 3 to 200 mbar. At 3 mbar, the lowest pressure studied, the oxide growth rates along the two polar directions are virtually the same. At higher pressures growth is faster on the carbon-terminated (0 0 0 1-bar) face. After consecutive oxidations at 1100 deg. C and 100 mbar in {sup 18}O{sub 2} and {sup 16}O{sub 2} gases, {sup 18}O depth profiles show significant isotopic exchange and oxygen movement within the oxide during oxidation.

  20. SiC Conversion Coating Prepared from Silica-Graphite Reaction

    Directory of Open Access Journals (Sweden)

    Back-Sub Sung

    2017-01-01

    Full Text Available The β-SiC conversion coatings were successfully synthesized by the SiO(v-graphite(s reaction between silica powder and graphite specimen. This paper is to describe the effects on the characteristics of the SiC conversion coatings, fabricated according to two different reaction conditions. FE-SEM, FE-TEM microstructural morphologies, XRD patterns, pore size distribution, and oxidation behavior of the SiC-coated graphite were investigated. In the XRD pattern and SAD pattern, the coating layers showed cubic SiC peak as well as hexagonal SiC peak. The SiC coatings showed somewhat different characteristics with the reaction conditions according to the position arrangement of the graphite samples. The SiC coating on graphite, prepared in reaction zone (2, shows higher intensity of beta-SiC main peak (111 in XRD pattern as well as rather lower porosity and smaller main pore size peak under 1 μm.

  1. ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

    International Nuclear Information System (INIS)

    Ashrafi, Almamun; Aminuzzaman, Mohammod

    2011-01-01

    ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2) ZnO ||(0 0 0 6) SiC and [112-bar 0] ZnO ||[112-bar 0] SiC . Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

  2. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  3. Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Byun, J.H.

    2010-01-01

    The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

  4. Determining the fracture resistance of advanced SiC fiber reinforced SiC matrix composites

    International Nuclear Information System (INIS)

    Nozawa, T.; Katoh, Y.; Kishimoto, H.

    2007-01-01

    Full text of publication follows: One of the perceived advantages for highly-crystalline and stoichiometric silicon carbide (SiC) and SiC composites, e.g., advanced SiC fiber reinforced chemically-vapor-infiltrated (CVI) SiC matrix composites, is the retention of fast fracture properties after neutron irradiation at high-temperatures (∼1000 deg. C) to intermediate-doses (∼15 dpa). Accordingly, it has been clarified that the maximum allowable stress (or strain) limit seems unaffected in certain irradiation conditions. Meanwhile, understanding the mechanism of crack propagation from flaws, as potential weakest link to cause composite failure, is somehow lacking, despite that determining the strength criterion based on the fracture mechanics will eventually become important considering the nature of composites' fracture. This study aims to evaluate crack propagation behaviors of advanced SiC/SiC and to provide fundamentals on fracture resistance of the composites to define the strength limit for the practical component design. For those purposes, the effects of irreversible energies related to interfacial de-bonding, fiber bridging, and microcrack forming on the fracture resistance were evaluated. Two-dimensional SiC/SiC composites were fabricated by CVI or nano-infiltration and transient-eutectic-phase (NITE ) methods. Hi-Nicalon TM Type-S or Tyranno TM -SA fibers were used as reinforcements. In-plane mode-I fracture resistance was evaluated by the single edge notched bend technique. The key finding is the continuous Load increase with the crack growth for any types of advanced composites, while many studies specified the gradual load decrease for the conventional composites once the crack initiates. This high quasi-ductility appeared due primarily to high friction (>100 MPa) at the fiber/matrix interface using rough SiC fibers. The preliminary analysis based on the linear elastic fracture mechanics, which does not consider the effects of irreversible energy

  5. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  6. Efficiency and Cost Comparison of Si IGBT and SiC JFET Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Ørndrup; Török, Lajos; Munk-Nielsen, Stig

    2013-01-01

    Silicon carbide (SiC) and other wide band gap devices are in these years undergoing a rapid development. The need for higher efficiency and smaller dimensions are forcing engineers to take these new devices in to considerations when choosing semiconductors for their converters. In this article a Si...

  7. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; hide

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  8. ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Ashrafi, Almamun, E-mail: ash2phy@gmail.com [Department of Physics, University of Vermont, VT 05405 (United States); Aminuzzaman, Mohammod [Department of Chemical Science, Universiti Tunku Abdul Rahman, Perak (Malaysia)

    2011-05-01

    ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2){sub ZnO}||(0 0 0 6){sub SiC} and [112-bar 0]{sub ZnO}||[112-bar 0]{sub SiC}. Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

  9. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  10. Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yuki [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Center for Computational Materials, Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712 (United States); Oshiyama, Atsushi [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-11-07

    We report on first-principles calculations that clarify the effect of lithium atom intercalation into zinc blende 3C-silicon carbide (3C-SiC) on electronic and structural properties. Lithium atoms inside 3C-SiC are found to donate electrons to 3C-SiC that is an indication of a new way of electron doping through the intercalation. The electrons doped into the conduction band interact with lithium cations and reduce the band spacing between the original valence and conduction bands. We have also found that a silicon monovacancy in 3C-SiC promotes the lithium intercalation, showing that the vacancy generation makes SiC as a possible anode material for lithium-ion battery.

  11. Effect of Reactant Concentration on the Microstructure of SiC Nano wires Grown In Situ within SiC Fiber Preforms

    International Nuclear Information System (INIS)

    Kim, Weon Ju; Kang, Seok Min; Park, Ji Yeon; Ryu, Woo Seog

    2006-01-01

    Silicon carbide fiber-reinforced silicon carbide matrix (SiC f /SiC) composites are considered as advanced materials for control rods and other in-core components of high-temperature gas cooled reactors. Although the carbon fiber-reinforced carbon matrix (C f /C) composites are more mature and have advantages in cost, manufacturability and some thermomechanical properties, the SiC f /SiC composites have a clear advantage in irradiation stability, specifically a lower level of swelling and retention of mechanical properties. This offers a lifetime component for control rod application to HTGRs while the Cf/C composites would require 2-3 replacements over the reactor lifetime. In general, the chemical vapor infiltration (CVI) technique has been used most widely to produce SiC f /SiC composites. Although the technique produces a highly pure SiC matrix, it requires a long processing time and inevitably contains large interbundle pores. The present authors have recently developed 'whisker growing-assisted process,' in which one-dimensional SiC nano structures with high aspect ratios such as whiskers, nano wires and nano rods are introduced into the fiber preform before the matrix infiltration step. This novel method can produce SiC f /SiC composites with a lower porosity and an uniform distribution of pores when compared with the conventional CVI. This would be expected to increase mechanical and thermal properties of the SiC f /SiC composites. In order to take full advantage of the whisker growing strategy, however, a homogeneous growth of long whiskers is required. In this study, we applied the atmospheric pressure CVI process without metallic catalysts for the growth of SiC nano wires within stacked SiC fiber fabrics. We focused on the effect of the concentration of a reactant gas on the growth behavior and microstructures of the SiC nano wires and discussed a controlling condition for the homogenous growth of long SiC nano wires

  12. SIC Industriemonitor najaar 2003

    NARCIS (Netherlands)

    Brouwer, N.; de Nooij, M.; Pomp, M.

    2003-01-01

    In juni 2000 publiceerde de Stichting voor Economisch Onderzoek (SEO) van de Universiteit van Amsterdam in opdracht van Stichting voor Industriebeleid en Communicatie (SIC) een ontwerp voor een SIC industriemonitor met een voorstel voor de inhoud en de structuur van een dergelijke monitor. Op dat

  13. Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

    Science.gov (United States)

    Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

    2016-09-01

    The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

  14. Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

    International Nuclear Information System (INIS)

    Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

    2011-01-01

    Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

  15. s-Processing from MHD-induced mixing and isotopic abundances in presolar SiC grains

    Science.gov (United States)

    Palmerini, S.; Trippella, O.; Busso, M.; Vescovi, D.; Petrelli, M.; Zucchini, A.; Frondini, F.

    2018-01-01

    In the past years the observational evidence that s-process elements from Sr to Pb are produced by stars ascending the so-called Asymptotic Giant Branch (or "AGB") could not be explained by self-consistent models, forcing researchers to extensive parameterizations. The crucial point is to understand how protons can be injected from the envelope into the He-rich layers, yielding the formation of 13C and then the activation of the 13C (α,n)16O reaction. Only recently, attempts to solve this problem started to consider quantitatively physically-based mixing mechanisms. Among them, MHD processes in the plasma were suggested to yield mass transport through magnetic buoyancy. In this framework, we compare results of nucleosynthesis models for Low Mass AGB Stars (M≲ 3M⊙), developed from the MHD scenario, with the record of isotopic abundance ratios of s-elements in presolar SiC grains, which were shown to offer precise constraints on the 13C reservoir. We find that n-captures driven by magnetically-induced mixing can indeed account for the SiC data quite well and that this is due to the fact that our 13C distribution fulfils the above constraints rather accurately. We suggest that similar tests should be now performed using different physical models for mixing. Such comparisons would indeed improve decisively our understanding of the formation of the neutron source.

  16. Vertically cross-linked and porous CoNi2S4 nanosheets-decorated SiC nanowires with exceptional capacitive performance as a free-standing electrode for asymmetric supercapacitors

    Science.gov (United States)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan; Li, Qingdang

    2016-11-01

    In this paper, a simple, low-cost and mild hydrothermal technology of growing vertically cross-linked ternary nickel cobalt sulfides nanosheets (CoNi2S4 NSs) with porous characteristics on SiC nanowires (SiC NWs) supporters with outstanding resistances to oxidation and corrosion, good conductivity and large specific surface area deposited directly on carbon cloth (CC) is successfully developed, forming a new family of free-standing advanced hybrid electrode for asymmetric supercapacitors (ASCs). Such integrated electrode (SiC NWs@CoNi2S4 NSs) manifests intriguing electrochemical characteristics such as high specific capacity (231.1 mA h g-1 at 2 A g-1) and rate capability due to the synergistic effect of SiC NWs and CoNi2S4 NSs with unique morphology. Additionally, an asymmetric supercapacitor is also assembled via using this special hybrid architectures as positive electrode and activated carbon (AC) on Ni foam (NF) as negative electrode, and it can yield a high energy density of 57.8 W h kg-1 with a power density of 1.6 kW kg-1 and long cycling lifespan. This study constitutes an emerging attractive strategy to reasonably design and fabricate novel SiC NWs-based nanostructured electrodes with enhanced capacity, which holds great potential to be the candidate of electrode materials for environmentally benign as well as high-performance energy storage devices.

  17. Enhanced defects recombination in ion irradiated SiC

    International Nuclear Information System (INIS)

    Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

    2010-01-01

    Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

  18. The Development of a Hybrid-Type Radiation Detector with SiC for a Reactor Robot

    International Nuclear Information System (INIS)

    Lee, Nam Ho; Cho, Jai Wan; Kim, Seung Ho

    2005-01-01

    For a robot working in a harsh environment such as a nuclear reactor environment or a space environment, requirements of on-board radiation detectors are not the same as those for environments around human. SiC devices with the wide band-gap are less dependent on temperature than Si counterparts and the can be the better candidate for the high radiation environment. With this background, radiation performance of a commercial SiC detector in a Co-60 gamma-ray environment has been evaluated. In addition to the SiC detector, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detector has been incorporated as a backup. With this MOSFET sensor the dosimeter can keep its radiation exposure history even with loss of power. It is not only a redundant feature but also a diverse feature. The dosimetry module can be attached to mobile robot for high radiation environment was developed. This module has both SiC diode and pMOSFET mentioned above. The monitoring program which receives the radiation information from them and gives out the alarm signal when the difference of the two values from them is over the preset level was constructed. Because both the SiC pulse-type detector and the MOSFET dosimeter are small and light weight, they can be easily accommodated on a small printcircuit board for a tight space on a robot arm or for a small spacecraft

  19. SIC POVMs and Clifford groups in prime dimensions

    International Nuclear Information System (INIS)

    Zhu Huangjun

    2010-01-01

    We show that in prime dimensions not equal to 3, each group covariant symmetric informationally complete positive operator valued measure (SIC POVM) is covariant with respect to a unique Heisenberg-Weyl (HW) group. Moreover, the symmetry group of the SIC POVM is a subgroup of the Clifford group. Hence, two SIC POVMs covariant with respect to the HW group are unitarily or antiunitarily equivalent if and only if they are on the same orbit of the extended Clifford group. In dimension 3, each group covariant SIC POVM may be covariant with respect to three or nine HW groups, and the symmetry group of the SIC POVM is a subgroup of at least one of the Clifford groups of these HW groups, respectively. There may exist two or three orbits of equivalent SIC POVMs for each group covariant SIC POVM, depending on the order of its symmetry group. We then establish a complete equivalence relation among group covariant SIC POVMs in dimension 3, and classify inequivalent ones according to the geometric phases associated with fiducial vectors. Finally, we uncover additional SIC POVMs by regrouping of the fiducial vectors from different SIC POVMs which may or may not be on the same orbit of the extended Clifford group.

  20. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    International Nuclear Information System (INIS)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanisław

    2014-01-01

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking

  1. Production of Rare Earth Isotope Beams for Radiotracer-DLTS on SiC

    CERN Multimedia

    2002-01-01

    Electrical properties of semiconductors are extremely sensitive to minor traces of impurities and defects. This fact allows to intentionally modify material properties and is thus the very basis of semiconductor electronics and optoelectronics. In the present project, electronic properties and doping effects of rare-earth elements in the technologically important semiconductor SiC are to be investigated using optical and electrical characterization techniques like Photoluminescence, Deep Level Transient Spectroscopy and Thermal Admittance Spectroscopy. By using the elemental transmutation of radioactive isotopes as a tracer, it will be guaranteed that the impurity-related band gap states can definitively be distinguished from intrinsic or process-induced defects. For SiC up to now only detailed investigation of Er- related deep levels have been reported, preliminary data exist for Sm- and Gd- impurities. In this project we propose the implantation of Pr and Eu isotopes for detailed level studies.

  2. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-10-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density functional theory to show that such a process is in fact feasible and obtain insight into its details. By means of total energy and nudged elastic band calculations we are able to establish the mechanism on an atomic level and to determine the driving forces involved in the different steps of the intercalation process through atomic defects.

  3. Research on SiC Whisker Prepared by H-PSO

    Directory of Open Access Journals (Sweden)

    WANG Yao

    2017-10-01

    Full Text Available SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid growth mechanism.

  4. Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

    International Nuclear Information System (INIS)

    Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

    2014-01-01

    The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

  5. Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Kamiyama, Satoshi

    2011-01-01

    In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown...... intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications....

  6. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  7. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  8. Irradiation damage of SiC semiconductor device (I)

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

  9. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  10. Liquid phase sintered SiC ceramics from starting materials of different grade Cerâmicas à base de SiC sinterizadas via fase líquida a partir de matérias-primas de diferentes purezas

    Directory of Open Access Journals (Sweden)

    V. A. Izhevskyi

    2004-09-01

    Full Text Available Possibility of high performance ceramics manufactured from commercial SiC powder of technical grade has been shown. Sintering behavior and microstructure formation under conditions of liquid phase sintering (LPS with oxynitride sintering aids (AlN-Y2O3 of three SiC-based compositions have been investigated. Two of the compositions were based on Alcoa 1000 SiC powder of technical grade, and the third one, which was used as a reference, was based on H.C. Starck UF-15 fine grade commercial powder. Milling process used for Alcoa 1000 SiC powder granulometry improvement has been investigated in detail, while chemical treatment of milled SiC powders has been used for pick-up impurities removal. Dilatometric experiments showed that SiC powder of technical grade after appropriate treatment exhibits sinterability comparable with the fine grade SiC. Microstructural investigations performed on sintered samples showed that the final microstructure of the Alcoa 1000 SiC based materials was practically identical with the H.C. Starck SiC based reference ones. Preliminary investigations of hardness and fracture toughness were carried out revealing excellent results for the materials produced from cheaper, nationally produced starting powder.Neste trabalho é apresentada a possibilidade de obtenção de cerâmicas de SiC de alto desempenho a partir de matéria-prima comercial de grau técnico. Foi realizado o estudo de sinterização via fase líquida e desenvolvimento microestrutural de três composições à base de SiC tendo como aditivos de sinterização AlN e Y2O3 . Duas destas composições são à base de SiC-1000 da Alcoa, grau técnico, e a terceira, utilizada como referência, à base do UF-15 da H.C. Starck - Alemanha, pó comercial de granulometria fina. O processo de moagem do pó SiC-1000 da Alcoa foi acompanhado por medidas de distribuição granulométrica e posterior ataque químico, para remoção de impurezas. Os pós de grau técnico, após

  11. Matrix densification of SiC composites by sintering process

    International Nuclear Information System (INIS)

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  12. Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

    Science.gov (United States)

    Pickering, Michael A.; Taylor, Raymond L.; Goela, Jitendra S.; Desai, Hemant D.

    1992-01-01

    Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

  13. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  14. Improved thermoelectric performance of CdO by adding SiC fibers versus by adding SiC nanoparticles inclusions

    Science.gov (United States)

    Liang, S.; Li, Longjiang

    2018-03-01

    We report the improved thermoelectric (TE) performance of CdO by alloying with SiC fibers. In contrast to the lowered thermoelectric figure of merit (ZT) in a CdO matrix with SiC nanoparticle composites, an appreciable ZT value increment of about 36% (from 0.32 to 0.435) at 1000 K was obtained in the CdO matrix with SiC fiber composites. Both kinds of composites show substantially decreased thermal conductivity due to additional phonon scattering by the nano-inclusions. Compared to the very high electrical resistivity (ρ ˜ 140 μΩ m) for 5 at. % SiC nanoparticle composites, SiC fiber composites favorably maintained a very low ρ (˜30 μΩ m) even with 5 at. % SiC at 1000 K. We think the substantial difference of specific surface areas of these two nano-inclusions (30 m2/g for fibers vs 300 m2/g for nanoparticles) might play a crucial role to fine tune the TE performance. Larger interface could be inductive to diffusion and electron acceptor activation, which affect carrier mobility considerably. This work might hint at an alternative approach to improve TE materials' performance.

  15. Preparation of biomorphic SiC ceramic by carbothermal reduction of oak wood charcoal

    International Nuclear Information System (INIS)

    Qian Junmin; Wang Jiping; Jin Zhihao

    2004-01-01

    Highly porous silicon carbide (SiC) ceramic with woodlike microstructure has been prepared at 1400-1600 deg. C by carbothermal reduction reaction of charcoal/silica composites in static argon atmosphere. These composites were fabricated by infiltrating silica sol into a porous biocarbon template from oak wood using a vacuum/pressure infiltration process. The morphology of resulting porous SiC ceramic, as well as the conversion mechanism of wood to porous SiC ceramic, have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Experimental results show that the biomorphic cellular morphology of oak wood charcoal is remained in the porous SiC ceramic with high precision that consists of β-SiC with traces of α-SiC. Silica in the charcoal/silica composites exists in the cellular pores in form of fibers and rods. The SiC strut material is formed by gas-solid reaction between SiO (g) and C (s) during the charcoal-to-ceramic conversion. The densification of SiC strut material may occur at moderate temperatures and holding time

  16. Preparation of biomorphic SiC ceramic by carbothermal reduction of oak wood charcoal

    Energy Technology Data Exchange (ETDEWEB)

    Qian Junmin; Wang Jiping; Jin Zhihao

    2004-04-25

    Highly porous silicon carbide (SiC) ceramic with woodlike microstructure has been prepared at 1400-1600 deg. C by carbothermal reduction reaction of charcoal/silica composites in static argon atmosphere. These composites were fabricated by infiltrating silica sol into a porous biocarbon template from oak wood using a vacuum/pressure infiltration process. The morphology of resulting porous SiC ceramic, as well as the conversion mechanism of wood to porous SiC ceramic, have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Experimental results show that the biomorphic cellular morphology of oak wood charcoal is remained in the porous SiC ceramic with high precision that consists of {beta}-SiC with traces of {alpha}-SiC. Silica in the charcoal/silica composites exists in the cellular pores in form of fibers and rods. The SiC strut material is formed by gas-solid reaction between SiO (g) and C (s) during the charcoal-to-ceramic conversion. The densification of SiC strut material may occur at moderate temperatures and holding time.

  17. High power RF performance test of an improved SiC load

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, W.H.; Kim, S.H.; Park, Y.J. [Pohang Accelerator Lab., Pohang Inst. of Sceince and Technology, Pohang (KR)] [and others

    1998-11-01

    Two prototypes of SiC loads sustaining a maximum peak power of 50 MW were fabricated by Nihon Koshuha Co. in Japan. The PAL conducted the high power RF performance tests of SiC loads to verify the operation characteristics for the application to the PLS Linac. The in-situ facility for the K 12 module was used for the test, which consists of a modulator and klystron system, waveguide network, vacuum and cooling system, and RF analyzing equipment. As the test results, no breakdown appeared up to 50 MW peak power of 1 {mu}s pulse width at a repetition rate of 50 Hz. However, as the peak power increased above 20 MW at 4 {mu}s with 10 Hz, the breakdown phenomena has been observed. Analysing the test results with the current operation power level of PLS Linac, it is confirmed that the SiC loads well satisfy the criteria of the PLS Linac operation. (author)

  18. Influence of extrusion parameters on sic distribution and properties of AA6061/SiC composites produced by kobo method

    Energy Technology Data Exchange (ETDEWEB)

    WoĨniak, Jarosáaw; Kostecki, Marek; Broniszewski, Kamil; Olszyna, Andrzej [Faculty of Material Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Bochniak, Wáodzimierz [Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Cracow (Poland)

    2013-07-01

    The influence of extrusion parameters on reinforcements distribution and properties of AA6061+x% vol. SiC p (x=0; 2.5; 5; 7.5; 10) composites was discussed in this paper The averages size of AA6061 and SiC particles were 10.6 μ m and 0.42 μ m, respectively. The composites were consolidated via powder metallurgy processing (without the sintering) and extruded by KoBo method. The microstructure was examined on each steps of production. High values of density for all produced composites were achieved. Additionally, hardness and Young’s modulus were investigated. The best reinforcement distribution and mechanical properties were obtained for composites extruded with the highest extrusion ratio. Key words: aluminum alloy, extrusion, aged hardening, metal matrix composites, microstructure.

  19. Effect of inclusion of SiC particulates on the mechanical resistance behaviour of stir-cast AA6063/SiC composites

    International Nuclear Information System (INIS)

    Balasubramanian, I.; Maheswaran, R.

    2015-01-01

    Highlights: • AA6063/SiC composites with different weight percent are stir cast. • Resistance properties against indentation, stretching force and sliding force are studied. • Increase in initiation of cleavage facets and reduces the tensile strength for 15% SiC. • Transition from micro ploughing to micro cutting wear mechanism is less due to SiC inclusion. - Abstract: This study investigates the mechanical resistance behaviour of AA6063 particulate composites with the inclusion of micron-sized silicon carbide (SiC) particles with different weight percentages in an AA6063 aluminium matrix. AA6063/SiC particulate composites containing 0, 5, 10, and 15 weight percent of SiC particles were produced by stir casting. Standard mechanical tests were conducted on the composite plates, and the mechanical resistance to indentation, tensile force and sliding force are evaluated. It has been observed that upon addition of SiC particles, the resistance against indentation is increased and the resistance against tensile force is initially increased and then decreased. Furthermore, using scanning electron microscopy (SEM), the fracture appearance of the broken specimen subjected to tensile force and morphological changes in the surface subjected to sliding force are analysed. The SEM images reveal that the addition of SiC particles in the AA6063 aluminium matrix initiates more cleavage facets. This leads to brittle fracture in the specimen subjected to tensile forces and less transition from material displacement to material removal in the specimen subjected to sliding forces

  20. Palladium assisted silver transport in polycrystalline SiC

    Energy Technology Data Exchange (ETDEWEB)

    Neethling, J.H., E-mail: Jan.Neethling@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); O' Connell, J.H.; Olivier, E.J. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-10-15

    The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd-Ag compound at temperatures of 800 and 1000 Degree-Sign C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC-SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag-Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag-Pd compound if present at the IPyC-SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

  1. Palladium assisted silver transport in polycrystalline SiC

    International Nuclear Information System (INIS)

    Neethling, J.H.; O’Connell, J.H.; Olivier, E.J.

    2012-01-01

    The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd–Ag compound at temperatures of 800 and 1000 °C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC–SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag–Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag–Pd compound if present at the IPyC–SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

  2. S-band and X-band integrated PWT photoelectron linacs

    International Nuclear Information System (INIS)

    Yu, D.; Newsham, D.; Zeng, J.; Rosenzweig, J.

    2001-01-01

    A compact high-energy injector, which has been developed by DULY Research Inc., will have wide scientific, industrial, and medical applications. The new photoelectron injector integrates the photocathode directly into a multicell linear accelerator. By focusing the beam with solenoids or permanent magnets, and producing high current with low emittance, high brightness and low energy spread are achieved. In addition to providing a small footprint and improved beam quality in an integrated structure, the compact system considerably simplifies external subsystems required to operate the photoelectron linac, including rf power transport, beam focusing, vacuum and cooling. The photoelectron linac employs an innovative Plane-Wave-Transformer (PWT) design, which provides strong cell-to-cell coupling, relaxes manufacturing tolerances and facilitates the attachment of external ports to the compact structure with minimal field interference. DULY Research Inc. under the support of the DOE Small Business Innovation Research (SBIR) program, has developed, constructed and installed a 20-MeV, S-band compact electron source at UCLA. Cold test results for this device are presented. DULY Research is also actively engaged in the development of an X-band photoelectron linear accelerator in a SBIR project. When completed, the higher frequency structure will be approximately three times smaller. Design considerations for this device are discussed following the S-band cold test results

  3. The Keenan and Wing bands in S stars

    International Nuclear Information System (INIS)

    Lambert, D.L.; Clegg, R.E.S.

    1980-01-01

    New observations of the near infrared spectra of S stars are presented as part of a survey of the unidentified Keenan and Wing bands. Bandhead wavelengths accurate to 0.5 A are presented. A new band is found at 9014 A. The bands are not present in normal M giants and dwarfs. Laboratory spectroscopy of heavy element oxides is reported. Several new identifications are proposed. The 10 300 A Wing band is identified with the Δv = - 1 sequence of the ZrO 9300 A Δv = 0 bands. The ZrO B 1 PI-A 1 Δ (Δv = 0) system may be responsible for either the 9736 A or the 10 515 A Wing bands. Two new bands in the near infrared at 8219 and 8235 A are provided by CeO. A new band with heads at 7503 and 7509 A in a spectrum of R And is tentatively attributed to YS. A band at 8268 A in M stars is the TiO delta(2-1) head. The 8610 A Keenan band is not due to CrH. Potential carriers of the Keenan and Wing bands are reviewed. It is suggested that the heavy element sulphides and, perhaps, chlorides are leading candidates. Identification of YS in R And may provide the first evidence for these sulphides. ZrS is a leading candidate for which laboratory spectroscopy is needed. (author)

  4. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    International Nuclear Information System (INIS)

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-01-01

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication

  5. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  6. Bulk Thermoelectric Materials Reinforced with SiC Whiskers

    Science.gov (United States)

    Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

    2014-06-01

    SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

  7. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

    Science.gov (United States)

    Das, Achintya; Duttagupta, Siddhartha P

    2015-12-01

    There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  8. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  9. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

    2017-01-01

    The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice...... the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

  10. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  11. Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

    2013-06-01

    We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

  12. D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

    Science.gov (United States)

    Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

    2016-09-01

    This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

  13. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  14. Creep behavior for advanced polycrystalline SiC fibers

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-01-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep open-quotes mclose quotes curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261 degrees C), Nicalon S (1256 degrees C), annealed Hi Nicalon (1215 degrees C), Hi Nicalon (1078 degrees C), Nicalon CG (1003 degrees C) and Tyranno E (932 degrees C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests

  15. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  16. Influence of defects in SiC (0001) on epitaxial graphene

    International Nuclear Information System (INIS)

    Guo Yu; Guo Li-Wei; Lu Wei; Huang Jiao; Jia Yu-Ping; Sun Wei; Li Zhi-Lin; Wang Yi-Fei

    2014-01-01

    Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG. (rapid communication)

  17. Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

    Science.gov (United States)

    Kuroda, Tatsuya; Mori, Nobuya

    2018-04-01

    The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.

  18. [Application of Raman spectroscopy to investigation of CVD-SIC fiber].

    Science.gov (United States)

    Liu, Bin; Yang, Yan-Qing; Luo, Xian; Huang, Bin

    2011-11-01

    The CVD-SiC fiber was studied by using laser Raman spectra. It was found that the sharp TO peak exists in the first SiC deposit layer, indicating the larger SiC grains. But the second SiC deposit layer is with small grains. Raman peak of carbon and silicon was detected respectively in the first and second layer. Compared with that of the single SiC fiber, the TO peaks move to the high wave number for the SiC fiber in SiC(f)/Ti-6Al-4V composite. It indicates that the compressive thermal residual stress is present in the SiC fiber during the fabrication of the composite because of the mismatched coefficient of thermal expansion between Ti-6Al-4V matrix and SiC fiber. The average thermal residual stress of the SiC fiber in SiC(f)/Ti-6Al-4V composite was calculated to be 318 MPa and the residual stress in first deposit layer is 436 MPa which is much higher than that in the second layer.

  19. Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

    Science.gov (United States)

    Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

    2010-11-01

    A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

  20. SiC as an oxidation-resistant refractory material. Pt. 1

    International Nuclear Information System (INIS)

    Schlichting, J.

    1979-01-01

    Uses his own investigations and gives a literature survey on the oxidation and corrosion behaviour of SiC (in the form of a pure SiC powder, hot-pressed and reaction-sintered materials). The excellent stability of SiC in oxidizing atmosphere is due to the development of protective SiO 2 coatings. Any changes in these protective coatings (e.g. due to impurities with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of application of SiC. (orig.) [de

  1. Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO{sub 2} core/shell self-organized nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fabbri, Filippo; Rossi, Francesca; Attolini, Giovanni; Salviati, Giancarlo; Iannotta, Salvatore [IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma (Italy); Aversa, Lucrezia; Verucchi, Roberto; Nardi, Marco [IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento (Italy); Fukata, Naoki [International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Dierre, Benjamin; Sekiguchi, Takashi [Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2010-08-27

    We report the influence of the native amorphous SiO{sub 2} shell on the cathodoluminescence emission of 3C-SiC/SiO{sub 2} core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO{sub 2} and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO{sub 2}-SiC interface properties is also reported.

  2. Band-structure calculations of noble-gas and alkali halide solids using accurate Kohn-Sham potentials with self-interaction correction

    International Nuclear Information System (INIS)

    Li, Y.; Krieger, J.B.; Norman, M.R.; Iafrate, G.J.

    1991-01-01

    The optimized-effective-potential (OEP) method and a method developed recently by Krieger, Li, and Iafrate (KLI) are applied to the band-structure calculations of noble-gas and alkali halide solids employing the self-interaction-corrected (SIC) local-spin-density (LSD) approximation for the exchange-correlation energy functional. The resulting band gaps from both calculations are found to be in fair agreement with the experimental values. The discrepancies are typically within a few percent with results that are nearly the same as those of previously published orbital-dependent multipotential SIC calculations, whereas the LSD results underestimate the band gaps by as much as 40%. As in the LSD---and it is believed to be the case even for the exact Kohn-Sham potential---both the OEP and KLI predict valence-band widths which are narrower than those of experiment. In all cases, the KLI method yields essentially the same results as the OEP

  3. Structural and thermal characterization of polyvinylalcohol grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    introduced in the characteristic TO and LO mode of vibration of SiC nanocrystals after grafting procedure.XRD analysis confirmed that the grafting procedure did not alter the crystalline geometry of SiC nanocrystals. TEM and SEM images further support the FTIR and Raman spectroscopic results and confirm...... of semiconducting SiC nanocrystals using a novel method. FTIR spectroscopy reveals the introduction of new peaks corresponding to various functional groups of PVA alongwith the presence of characteristic Si-C vibrational peak in the spectra of grafted SiC nanocrystals. Raman spectra depict the presence of changes...... the presence of PVA layer around SiC nanocrystals. Thermal degradation behavior of PVA-g-SiC nanocrystals has been studied using TGA analysis....

  4. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  5. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2001-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  6. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2003-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  7. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2002-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  8. Magnetron based high energy S-band linac system

    International Nuclear Information System (INIS)

    Tiwari, T.; Krishnan, R.; Phatangare, Manoj

    2012-01-01

    This paper deals with the study of magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. The energy and dose are two important parameters of linac system which depend on input power of microwave source and length of linac tube. Here the author has studied how these parameters can be improved for side coupled standing wave S-band linac system

  9. SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

    Science.gov (United States)

    Torrisi, L.; Cannavò, A.

    2016-09-01

    Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

  10. SiC Seeded Crystal Growth

    Science.gov (United States)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  11. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  12. On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos

    Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... diodes, or the introduction of silicon carbide (SiC) diodes, provided large steps in miniaturization and efficiency improvement of switched mode power converters. Gallium nitride (GaN) and SiC semiconductor devices have already been around for some years. The first one proliferated due to the necessity...... of high frequency operation in optoelectronics applications. On the other hand, Schottky SiC power diodes were introduced in 2001 as an alternative to eliminate reverse recovery issues in Si rectifiers. Wide band-gap semiconductors offer an increased electrical field strength and electron mobility...

  13. Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

    Science.gov (United States)

    Ko, Hyunseok

    Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding

  14. Enhanced visible light photocatalytic H{sub 2} evolution of metal-free g-C{sub 3}N{sub 4}/SiC heterostructured photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Biao, E-mail: wangbiao@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Jingtao, E-mail: zhangjtao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China); Huang, Feng, E-mail: huangfeng@mail.sysu.edu.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China)

    2017-01-01

    Highlights: • Novel g-C{sub 3}N{sub 4}/SiC composite was prepared by synthesizing g-C{sub 3}N{sub 4} on the surface of SiC. • g-C{sub 3}N{sub 4}/SiC composites exhibit much higher H{sub 2} production activity than pure g-C{sub 3}N{sub 4}. • The g-C{sub 3}N{sub 4}/SiC heterojunction mainly accounts for improved photocatalytic activity. - Abstract: g-C{sub 3}N{sub 4} has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C{sub 3}N{sub 4}/SiC composites were prepared via in situ synthesis of g-C{sub 3}N{sub 4} on the surface of SiC, with which g-C{sub 3}N{sub 4} shows tight interaction (chemical bonding). The g-C{sub 3}N{sub 4}/SiC composites exhibit high stability in H{sub 2} production under irradiation with visible light (λ ≥ 420 nm), demonstrating a maximum of 182 μmol g{sup −1} h{sup −1}, being 3.4 times higher than that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic H{sub 2} production ability for g-C{sub 3}N{sub 4}/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C{sub 3}N{sub 4}. This study may provide new insights into the development of g-C{sub 3}N{sub 4}-based composites as stable and efficient photocatalysts for H{sub 2} production from water splitting.

  15. High density plasma via hole etching in SiC

    International Nuclear Information System (INIS)

    Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

    2001-01-01

    Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

  16. Emanation thermal analysis of SiC based materials

    Czech Academy of Sciences Publication Activity Database

    Bálek, V.; Zeleňák, V.; Mitsuhashi, T.; Bakardjieva, Snejana; Šubrt, Jan; Haneda, H.

    2002-01-01

    Roč. 67, č. 1 (2002), s. 83-89 ISSN 1418-2874 R&D Projects: GA MŠk ME 180 Grant - others:EFDA(XE) TTMA-001 Institutional research plan: CEZ:AV0Z4032918 Keywords : emanation thermal analysis * SEM * SiC nanocomposites Subject RIV: CA - Inorganic Chemistry Impact factor: 0.598, year: 2002

  17. High-power test of S-band klystron for long-pulse operation

    International Nuclear Information System (INIS)

    Morii, Y.; Oshita, E.; Abe, S.; Keishi, T.; Tomimasu, T.; Ohkubo, Y.; Yoshinao, M.; Yonezawa, H.

    1994-01-01

    FELI(Free Electron Laser Research Institute, Inc.) is constructing a free electron laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using an S-band linac. The linac is commissioning now. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) of the FELI linac are operated in three pulse operation modes (pulse width and peak RF power; 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW). The S-band klystron and its modulator were combined to test their performance. The high power test results of the S-band klystron are summarized in this paper. (author)

  18. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  19. SEU-hardened silicon bipolar and GaAs MESFET SRAM cells using local redundancy techniques

    International Nuclear Information System (INIS)

    Hauser, J.R.

    1992-01-01

    Silicon bipolar and GaAs FET SRAM's have proven to be more difficult to harden with respect to single-event upset mechanisms than have silicon CMOS SRAM's. This is a fundamental property of bipolar and JFET or MESFET device technologies which do not have a high-impedance, nonactive isolation between the control electrode and the current or voltage being controlled. All SEU circuit level hardening techniques applied at the local level must use some type of information storage redundancy so that information loss on one node due to an SEU event can be recovered from information stored elsewhere in the cell. In CMOS technologies, this can be achieved by the use of simple cross-coupling resistors, whereas in bipolar and FET technologies, no such simple approach is possible. Several approaches to the use of local redundancy in bipolar and FET technologies are discussed in this paper. At the expense of increased cell complexity and increased power consumption and write time, several approaches are capable of providing complete SEU hardness at the local cell level

  20. New constructions of approximately SIC-POVMs via difference sets

    Science.gov (United States)

    Luo, Gaojun; Cao, Xiwang

    2018-04-01

    In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

  1. Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

    Science.gov (United States)

    Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

    2017-08-01

    Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

  2. Development of the fabrication process of SiC composite by polycarbosilane

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju; Kim, Jung Il; Ryu, Woo Seog

    2004-11-01

    This technical report reviewed the fabrication process of fiber reinforced ceramic composites, characteristics of the PIP process, and applications of SiC f /SiC composite to develop a silicon carbide composite by PIP method. Additionally, characteristics and thermal behaviors of a PCS+SiC powder slurry and infiltration behaviors of slurry into the SiC fabric was evaluated. The stacking behaviors of SiC fabrics infiltrated a PCS+SiC powder slurry was also investigated. Using this stacked preforms, SiC f /SiC composites were fabricated by the electron beam curing and pyrolysis process and the thermal oxidation curing and pyrolysis process, respectively. And the characteristics of both composites were compared

  3. Near-surface and bulk behavior of Ag in SiC

    International Nuclear Information System (INIS)

    Xiao, H.Y.; Zhang, Y.; Snead, L.L.; Shutthanandan, V.; Xue, H.Z.; Weber, W.J.

    2012-01-01

    Highlights: ► Ag release from SiC poses problems in safe operation of nuclear reactors. ► Near-surface and bulk behavior of Ag are studied by ab initio and ion beam methods. ► Ag prefers to adsorb on the surface rather than in the bulk SiC. ► At high temperature Ag desorbs from the surface instead of diffusion into bulk SiC. ► Surface diffusion may be a dominating mechanism accounting for Ag release from SiC. - Abstract: The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85–1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  4. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  5. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  6. Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy

    Science.gov (United States)

    Kohlscheen, J.; Emirov, Y. N.; Beerbom, M. M.; Wolan, J. T.; Saddow, S. E.; Chung, G.; MacMillan, M. F.; Schlaf, R.

    2003-09-01

    The band lineup of p- and n-type 4H-SiC/Al interfaces was determined using x-ray photoemission spectroscopy (XPS). Al was deposited in situ on ex situ cleaned SiC substrates in several steps starting at 1.2 Å up to 238 Å nominal film thickness. Before growth and after each growth step, the sample surface was characterized in situ by XPS. The analysis of the spectral shifts indicated that during the initial deposition stages the Al films react with the ambient surface contamination layer present on the samples after insertion into vacuum. At higher coverage metallic Al clusters are formed. The band lineups were determined from the analysis of the core level peak shifts and the positions of the valence bands maxima (VBM) depending on the Al overlayer thickness. Shifts of the Si 2p and C 1s XPS core levels occurred to higher (lower) binding energy for the p-(n-)type substrates, which was attributed to the occurrence of band bending due to Fermi-level equilibration at the interface. The hole injection barrier at the p-type interface was determined to be 1.83±0.1 eV, while the n-type interface revealed an electron injection barrier of 0.98±0.1 eV. Due to the weak features in the SiC valence bands measured by XPS, the VBM positions were determined using the Si 2p peak positions. This procedure required the determination of the Si 2p-to-VBM binding energy difference (99.34 eV), which was obtained from additional measurements.

  7. Spectrum Band Selection in Delay-QoS Constrained Cognitive Radio Networks

    KAUST Repository

    Yang, Yuli

    2014-01-01

    In this paper, a cognitive radio (CR) network with multiple spectrum bands available for secondary users (SUs) is considered. For the SU\\'s active spectrum-band selection, two criteria are developed. One is to select the band with the highest secondary channel power gain, and the other is to select the band with the lowest interference channel power gain to primary users (PUs). With the quality-of-service (QoS) requirement concerning delay, the effective capacity (EC) behaviors over secondary links are investigated for both criteria under two spectrum-sharing constraints. To begin by presenting full benefits in these criteria, the constraint imposed on the secondary transmitter (ST) is the average interference limitation to PUs only. Furthermore, taking into account the ST\\'s battery/energy budget, the ST is imposed by joint constraints on its average interference to PUs, as well as on its own average transmit power. For either constraint, we formulate the ST\\'s optimal transmit power allocation to maximize the SU\\'s EC with both band-selection criteria and, correspondingly, obtain the secondary\\'s power allocation and maximum EC in closed forms. Numerical results demonstrated subsequently substantiate the validity of our derivations and provide a powerful tool for the spectrum-band selection in CR networks with multiple bands available. © 1967-2012 IEEE.

  8. Advances in X-Band and S-Band Linear Accelerators for Security, NDT, and Other Applications

    CERN Document Server

    Mishin, Andrey V

    2005-01-01

    At AS&E High Energy Systems Division, we designed several new advanced high energy electron beam and X-ray sources. Our primary focus has always been in building the world's most portable commercial X-band accelerators. Today, our X-band systems frequently exceed performance of the similar S-band machines, while they are more portable compared to the latter. The new designs of the X-band accelerators in the most practical energy range from 1 MeV to 6 MeV have been tested delivering outstanding results. Seventy 6 MeV X-band linacs systems have been produced. The most compact linac for security is used by AS&E in a self-shielded, Shaped Energy™ cargo screening system. We pioneered using the X-band linear accelerators for CT, producing high quality images of oil pipes and wood logs. An X-band linear accelerator head on a robotic arm has been used for electron beam radiation curing of an odd-shaped graphite composite part. We developed the broad-range 4 MeV to over 10 MeV energy-regulated X-band ...

  9. Band structural properties of MoS2 (molybdenite)

    International Nuclear Information System (INIS)

    Gupta, V.P.

    1980-01-01

    Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

  10. Introduction of nano-laminate Ti3SiC2 and SiC phases into Cf-C composite by liquid silicon infiltration method

    Directory of Open Access Journals (Sweden)

    Omid Yaghobizadeh

    2017-03-01

    Full Text Available The material Cf-C-SiC-Ti3SiC2 is promising for high temperature application. Due to the laminated structure and special properties, the Ti3SiC2 is one of the best reinforcements for Cf-C-SiC composites. In this paper, Cf-C-SiC-Ti3SiC2 composites were fabricated by liquid silicon infiltration (LSI method; the effect of the TiC amount on the various composites properties were studied. For samples with 0, 50 and 90 vol.% of TiC, the results show that bending strength are 168, 190, and 181 MPa; porosities are 3.2, 4.7, and 9%; the fracture toughness are 6.1, 8.9, and 7.8 MPa∙m1/2; interlaminar shear strength are 27, 36, and 30 MPa; the amount of the MAX phase are 0, 8.5, and 5.6 vol.%, respectively. These results show that amount of TiC is not the main effective parameter in synthesis of Ti3SiC2. The existence of carbon promotes the synthesis of Ti3SiC2 indicating that only sufficient carbon content can lead to the appearance of Ti3SiC2 in the LSI process.

  11. Homoepitaxial VPE growth of SiC active layers

    Energy Technology Data Exchange (ETDEWEB)

    Burk, A.A. Jr. [Northrop Grumman Electron. Sensors and Syst. Div., Baltimore, MD (United States); Rowland, L.B. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-01

    SiC active layers of tailored thickness and doping form the heart of all SiC electronic devices. These layers are most conveniently formed by vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC-VPE layers` material properties by both semiconductor device physics and available methods of device processing. In this paper, the current ability of the SiC-VPE process to meet these requirements is described along with continuing improvements in SiC epitaxial reactors, processes and materials. (orig.) 48 refs.

  12. The SiC hardware of the Sentinel-2 multi spectral instrument

    Science.gov (United States)

    Bougoin, Michel; Lavenac, Jérôme

    2017-11-01

    The Sentinel-2 mission is a major part of the GMES (Global Monitoring for Environment and Security) program which has been set up by the European Union, on a joint initiative with the European Space Agency. A pair of identical satellites will observe the earth from a sun-synchronous orbit at 786 km altitude. Astrium is the prime contractor of the satellites and their payload. The MultiSpectral Instrument features a "all-SiC" TMA (Three Mirror Anastygmat) telescope. MSI will provide optical images in 13 spectral bands, in the visible and also the near infra-red range, with a 10 to 60 m resolution and a 290 km wide swath. The Boostec® SiC material is used mainly for its high specific stiffness (Youngs modulus / density) and its high thermal stability (thermal conductivity / coefficient of thermal expansion) which allow to reduce the distortions induced by thermo-elastic stresses. Its high mechanical properties as well as the relevant technology enable to make not only the mirrors but also the structure which holds them and the elements of the focal plane (including some detectors packaging). Due to the required large size, accuracy and shape complexity, developing and manufacturing some of these SiC parts required innovative manufacturing approach. It is reviewed in the present paper.

  13. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    Directory of Open Access Journals (Sweden)

    WEON-JU KIM

    2013-08-01

    Full Text Available The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiCn interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

  14. About SIC POVMs and discrete Wigner distributions

    International Nuclear Information System (INIS)

    Colin, Samuel; Corbett, John; Durt, Thomas; Gross, David

    2005-01-01

    A set of d 2 vectors in a Hilbert space of dimension d is called equiangular if each pair of vectors encloses the same angle. The projection operators onto these vectors define a POVM which is distinguished by its high degree of symmetry. Measures of this kind are called symmetric informationally complete, or SIC POVMs for short, and could be applied for quantum state tomography. Despite its simple geometrical description, the problem of constructing SIC POVMs or even proving their existence seems to be very hard. It is our purpose to introduce two applications of discrete Wigner functions to the analysis of the problem at hand. First, we will present a method for identifying symmetries of SIC POVMs under Clifford operations. This constitutes an alternative approach to a structure described before by Zauner and Appleby. Further, a simple and geometrically motivated construction for an SIC POVM in dimensions two and three is given (which, unfortunately, allows no generalization). Even though no new structures are found, we hope that the re-formulation of the problem may prove useful for future inquiries

  15. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  16. Research Progress of Optical Fabrication and Surface-Microstructure Modification of SiC

    Directory of Open Access Journals (Sweden)

    Fang Jiang

    2012-01-01

    Full Text Available SiC has become the best candidate material for space mirror and optical devices due to a series of favorable physical and chemical properties. Fine surface optical quality with the surface roughness (RMS less than 1 nm is necessary for fine optical application. However, various defects are present in SiC ceramics, and it is very difficult to polish SiC ceramic matrix with the 1 nm RMS. Surface modification of SiC ceramics must be done on the SiC substrate. Four kinds of surface-modification routes including the hot pressed glass, the C/SiC clapping, SiC clapping, and Si clapping on SiC surface have been reported and reviewed here. The methods of surface modification, the mechanism of preparation, and the disadvantages and advantages are focused on in this paper. In our view, PVD Si is the best choice for surface modification of SiC mirror.

  17. s de Al2O3/SiC obtidos a partir de reação de redução carbotérmica Al2O3/SiC powders from carbothermal reduction reaction

    Directory of Open Access Journals (Sweden)

    F. M. Spiandorello

    1999-12-01

    Full Text Available Neste trabalho foram utilizadas matérias-primas naturais para a obtenção de pós Al2O3/SiC através da redução carbotérmica das mesmas por um agente rico em carbono. Os aluminossilicatos estudados foram caulim, cianita e ilita-moscovita, sendo que os mesmos foram reduzidos ou por negro de fumo ou por grafite. Os pós resultantes da reação foram caracterizados por microscopia eletrônica de varredura e transmissão, difração de raios X e picnometria de hélio. Durante a reação, as diferenças existentes tanto na estrutura das matérias-primas quanto na composição química produziram pós com morfologia diversa. Foram encontradas estruturas como grandes aglomerados esféricos, whiskers, partículas e aglomerados fibrosos.In this work natural raw materials were used to obtain Al2O3/SiC powders by carbothermal reduction. The aluminosilicates studied were kaolin, kyanite and illite-muscovite and the reductor agents were carbon black or graphite. The reaction powders were characterized by transmission and scanning electron microscopy, X-ray diffraction and helium picnometry. During the reaction, the differences among the raw materials structures as well as into the chemical composition produced powders with several morphologies. Big spherical agglomerates, whiskers, particles and fibrous clusters were found.

  18. SiC nanoparticles as potential carriers for biologically active substances

    Science.gov (United States)

    Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

    2009-01-01

    Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

  19. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  20. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

  1. MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

    International Nuclear Information System (INIS)

    Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun

    2015-01-01

    A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti 3 SiC 2 was investigated depending on the compositions of the preform and melt. In most cases, TiSi 2 was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti 3 SiC 2 was the connection with the pressurizing

  2. Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

    Directory of Open Access Journals (Sweden)

    Hao Liu

    2017-12-01

    Full Text Available Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

  3. Packaging Technologies for 500C SiC Electronics and Sensors

    Science.gov (United States)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  4. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  5. Residual stress and mechanical properties of SiC ceramic by heat treatment

    International Nuclear Information System (INIS)

    Yoon, H.K.; Kim, D.H.; Shin, B.C.

    2007-01-01

    Full text of publication follows: Silicon carbide is a compound of relatively low density, high hardness, elevated thermal stability and good thermal conductivity, resulting in good thermal shock resistance. Because of these properties, SiC materials are widely used as abrasives and refractories. In this study, SiC single and poly crystals was grown by the sublimation method using the SiC seed crystal and SiC powder as the source material. Mechanical properties of SiC single and poly crystals are carried out by using the nano-indentation method and small punch test after the heat treatment. As a result, mechanical properties of SiC poly crystal had over double than single. And SiC single and poly crystals were occurred residual stress, but residual stress was shown relaxant properties by the effect of heat treatment. (authors)

  6. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    OpenAIRE

    Pinzón, Cristian; de Paz Santana, Yanira; Bajo Pérez, Javier; Abraham, Ajith P.; Corchado Rodríguez, Juan M.

    2009-01-01

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a k...

  7. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...... by an optimization process to facilitate the extraction of the model’s parameters in a more automated way relying on a small number of experimental waveforms. Through extensive experimental work, it is shown that the model accurately predicts both static and dynamic performances. The series connection of two Si......C power modules has been investigated through the validation of the static and dynamic conditions. Thanks to the developed model, a better understanding of the challenges introduced by uneven voltage balance sharing among series connected devices is possible....

  8. Irradiation damages in Ti3SiC2

    International Nuclear Information System (INIS)

    Nappe, J.C.; Grosseau, Ph.; Guilhot, B.; Audubert, F.; Beauvy, M.

    2007-01-01

    Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti 3 SiC 2 is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO 2 (formed at the surface of Ti 3 SiC 2 ) is pulverized by the irradiation and that the crystal lattice of Ti 3 SiC 2 dilates with c. (O.M.)

  9. Design of an S band narrow-band bandpass BAW filter

    Science.gov (United States)

    Gao, Yang; Zhao, Kun-li; Han, Chao

    2017-11-01

    An S band narrowband bandpass filter BAW with center frequency 2.460 GHz, bandwidth 41MHz, band insertion loss - 1.154 dB, the passband ripple 0.9 dB, the out of band rejection about -42.5dB@2.385 GHz; -45.5dB@2.506 GHz was designed for potential UAV measurement and control applications. According to the design specifications, the design is as follows: each FBAR's stack was designed in BAW filter by using Mason model. Each FBAR's shape was designed with the method of apodization electrode. The layout of BAW filter was designed. The acoustic-electromagnetic cosimulation model was built to validate the performance of the designed BAW filter. The presented design procedure is a common one, and there are two characteristics: 1) an A and EM co-simulation method is used for the final BAW filter performance validation in the design stage, thus ensures over-optimistic designs by the bare 1D Mason model are found and rejected in time; 2) An in-house developed auto-layout method is used to get compact BAW filter layout, which simplifies iterative error-and-try work here and output necessary in-plane geometry information to the A and EM cosimulation model.

  10. Mapping Forest Cover and Forest Cover Change with Airborne S-Band Radar

    Directory of Open Access Journals (Sweden)

    Ramesh K. Ningthoujam

    2016-07-01

    Full Text Available Assessments of forest cover, forest carbon stocks and carbon emissions from deforestation and degradation are increasingly important components of sustainable resource management, for combating biodiversity loss and in climate mitigation policies. Satellite remote sensing provides the only means for mapping global forest cover regularly. However, forest classification with optical data is limited by its insensitivity to three-dimensional canopy structure and cloud cover obscuring many forest regions. Synthetic Aperture Radar (SAR sensors are increasingly being used to mitigate these problems, mainly in the L-, C- and X-band domains of the electromagnetic spectrum. S-band has not been systematically studied for this purpose. In anticipation of the British built NovaSAR-S satellite mission, this study evaluates the benefits of polarimetric S-band SAR for forest characterisation. The Michigan Microwave Canopy Scattering (MIMICS-I radiative transfer model is utilised to understand the scattering mechanisms in forest canopies at S-band. The MIMICS-I model reveals strong S-band backscatter sensitivity to the forest canopy in comparison to soil characteristics across all polarisations and incidence angles. Airborne S-band SAR imagery over the temperate mixed forest of Savernake Forest in southern England is analysed for its information content. Based on the modelling results, S-band HH- and VV-polarisation radar backscatter and the Radar Forest Degradation Index (RFDI are used in a forest/non-forest Maximum Likelihood classification at a spatial resolution of 6 m (70% overall accuracy, κ = 0.41 and 20 m (63% overall accuracy, κ = 0.27. The conclusion is that S-band SAR such as from NovaSAR-S is likely to be suitable for monitoring forest cover and its changes.

  11. Fast neutron detection at near-core location of a research reactor with a SiC detector

    Science.gov (United States)

    Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

    2018-04-01

    The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

  12. TRISO coated fuel particles with enhanced SiC properties

    International Nuclear Information System (INIS)

    Lopez-Honorato, E.; Tan, J.; Meadows, P.J.; Marsh, G.; Xiao, P.

    2009-01-01

    The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

  13. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

  14. UV laser drilling of SiC for semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Olaf; Schoene, Gerd; Wernicke, Tim; John, Wilfred; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2007-04-15

    Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to provide an efficient way to create through and blind holes in 400 {mu}m thick SiC. When drilling through, openings in the front pads are formed, while blind holes stop {approx}40 {mu}m before the backside and were advanced to the electrical contact pad by subsequent plasma etching without an additional mask. Low induction connections (vias) between the transistor's source pads and the ground on the backside were formed by metallization of the holes. Micro vias having aspect ratios of 5-6 have been processed in 400 {mu}m SiC. The process flow from wafer layout to laser drilling is available including an automated beam alignment that allows a positioning accuracy of {+-}1 {mu}m with respect to existing patterns on the wafer. As proven by electrical dc and rf measurements the laser-assisted via technologies have successfully been implemented into fabrication of AlGaN/GaN high-power transistors.

  15. High Efficiency S-Band 20 Watt Amplifier

    Data.gov (United States)

    National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

  16. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  17. Band structure and orbital character of monolayer MoS2 with eleven-band tight-binding model

    Science.gov (United States)

    Shahriari, Majid; Ghalambor Dezfuli, Abdolmohammad; Sabaeian, Mohammad

    2018-02-01

    In this paper, based on a tight-binding (TB) model, first we present the calculations of eigenvalues as band structure and then present the eigenvectors as probability amplitude for finding electron in atomic orbitals for monolayer MoS2 in the first Brillouin zone. In these calculations we are considering hopping processes between the nearest-neighbor Mo-S, the next nearest-neighbor in-plan Mo-Mo, and the next nearest-neighbor in-plan and out-of-plan S-S atoms in a three-atom based unit cell of two-dimensional rhombic MoS2. The hopping integrals have been solved in terms of Slater-Koster and crystal field parameters. These parameters are calculated by comparing TB model with the density function theory (DFT) in the high-symmetry k-points (i.e. the K- and Γ-points). In our TB model all the 4d Mo orbitals and the 3p S orbitals are considered and detailed analysis of the orbital character of each energy level at the main high-symmetry points of the Brillouin zone is described. In comparison with DFT calculations, our results of TB model show a very good agreement for bands near the Fermi level. However for other bands which are far from the Fermi level, some discrepancies between our TB model and DFT calculations are observed. Upon the accuracy of Slater-Koster and crystal field parameters, on the contrary of DFT, our model provide enough accuracy to calculate all allowed transitions between energy bands that are very crucial for investigating the linear and nonlinear optical properties of monolayer MoS2.

  18. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  19. Performance of a 150-MW S-band klystron

    International Nuclear Information System (INIS)

    Sprehn, D.; Phillips, R.M.; Caryotakis, G.

    1994-09-01

    As part of an international collaboration, the Stanford Linear Accelerator Center (SLAC) klystron group has designed, fabricated, and tested a 60-Hz, 3-μs, 150-MW S-band klystron built for Deutsches Elektronen Synchrotron (DESY). A test diode with a 535-kV, 700-A electron beam was constructed to verify the gun operation. The first klystron was built and successfully met design specifications. The 375-MW electron beam represents a new record for SLAC accelerator klystrons in terms of voltage, current, energy, and ruggedness of design. The rf output power is a 150% increase over the S-band tubes currently used in the two-mile-long linear accelerator at SLAC. This paper discusses design issues and experimental results of the diode and klystron

  20. Fiscal 1999 achievement report. Development of ultralow-loss power device technology; 1999 nendo choteisonshitsu denryoku soshi gijutsu kaihtsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The aim is to establish basic technologies for upgrading wide-gap semiconductor devices, fabricated mainly of SiC, in terms of their low-loss, high-speed, and high-power features. In the research and development of ultralow-loss power device technology, progress of the effort is reviewed, problems in the process of research and development are extracted, and technological trends are surveyed. In the development of basic technologies, an SiC crystal growing device is experimentally built and the process of crystal growth is assessed and analyzed, and tasks to discharge for higher quality and larger diameter are extracted. Basic technologies are developed relative to the epitaxial growth, interface control, and conductivity control of SiC etc. In the development of technologies for developing SiC into devices, technological development is carried out for the junction-type FET (field effect transistor), which involves termination structure optimization, high-voltage capability enhancement, and gate-off gain improvement. As for MOSFET (metal oxide semiconductor FET), MOS channel formation technology is developed and device-constructing technology is also developed. As for MESFET (metal-semiconductor FET), micro-processing is established for a success in experimentally building a 0.5{mu}m-long gate. (NEDO)

  1. Fabrication of Multi-Layerd SiC Composite Tube for LWR Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong; Jung, Choonghwan; Kim, Weonju; Park, Jiyeon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Jongmin [Chungnam National Univ., Daejeon (Korea, Republic of)

    2013-05-15

    In this study, the chemical vapor deposition (CVD) and chemical vapor infiltration (CVI) methods were employed for the fabrication of the composite tubes. SiC ceramics and SiC-based composites have recently been studied for LWR fuel cladding applications because of good mechanical/physical properties, neutron irradiation resistance and excellent compatibility with coolant under severe accident. A multi-layered SiC composite tube as the nuclear fuel cladding is composed of the monolith SiC inner layer, SiC/SiC composite intermediate layer, and monolith SiC outer layer. Since all constituents should be highly pure, stoichiometric to achieve the good properties, it has been considered that the chemical process is a well-suited technique for the fabrication of the SiC phases.

  2. Behaviors of SiC fibers at high temperature

    International Nuclear Information System (INIS)

    Colin, C.; Falanga, V.; Gelebart, L.

    2010-01-01

    On the one hand, considering the improvements of mechanical and thermal behaviours of the last generation of SiC fibers (Hi-Nicalon S, Tyranno SA3); on the other hand, regarding physical and chemical properties and stability under irradiation, SiC/SiC composites are potential candidates for nuclear applications in advanced fission and fusion reactors. CEA must characterize and optimize these composites before their uses in reactors. In order to study this material, CEA is developing a multi-scale approach by modelling from fibers to bulk composite specimen: fibres behaviours must be well known in first. Thus, CEA developed a specific tensile test device on single fibers at high temperature, named MecaSiC. Using this device, we have already characterized the thermoelastic and thermoelectric behaviours of SiC fibers. Additional results about the plastic properties at high temperatures were also obtained. Indeed, we performed tensile tests between 1200 degrees C up to 1700 degrees C to characterize this plastic behaviour. Some thermal annealing, up to 3 hours at 1700 degrees C, had been also performed. Furthermore, we compare the mechanical behaviours with the thermal evolution of the electric resistivity of these SiC fibers. Soon, MecaSiC will be coupled to a new charged particle accelerator. Thus, in this configuration, we will be able to study in-situ irradiation effects on fibre behaviours, as swelling or creep for example

  3. Modulators for the S-band test linac at DESY

    Science.gov (United States)

    Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch.

    1995-07-01

    The development of adequate modulators for high peak power klystrons is one of the focus points for linear collider R&D programs. For the DESY/THD S-band linear collider study 150 MW rf-pulse power at 50 Hz repetition rate and 3 μs pulse duration is required [1]. Two different modulator schemes are under investigation. One is the conventional line type pulser, using a pulse forming network and a step up transformer, the other one is a hard tube pulser, using a dc power source at the full klystron voltage and a switch tube. This paper is focused on the modulator development for the S-band Test Linac at DESY. After a short overview over the test linac and a brief description of the 150 MW S-band klystron the circuitry of the line type pulse (LTP) is given. A hard tube pulser (HTP), which switches the high voltage directly from a storage capacitor to the klystron, has been built up at DESY. Circuitry and the results of the commissioning of the switch tube are reported.

  4. Ag Transport Through Non-Irradiated and Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  5. Ag Transport Through Non-Irradiated and Irradiated SiC

    International Nuclear Information System (INIS)

    Szlufarska, Izabela; Morgan, Dane; Blanchard, James

    2016-01-01

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  6. Preparation and infrared absorption properties of buried SiC layers

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Wong, S.P.; Kwok, R.W.M.

    1997-01-01

    Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C + ions implanted into Si substrates under different doses. In the present study, the extracted voltage was 50 kV and the ion dose was varied from 3.0 x 10 17 to 1.6 x 10 18 cm -2 . According to infrared absorption measurements, it was fount that the structure of the buried SiC layers depended on the ion dose. Moreover, the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400 degree C with the MEVVA ion source

  7. Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

    International Nuclear Information System (INIS)

    Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

    1982-01-01

    A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

  8. Temperature Dependence of Mechanical Properties of TRISO SiC Coatings

    International Nuclear Information System (INIS)

    Kim, Do Kyung; Park, Kwi Il; Lee, Hyeon Keun; Seong, Young Hoon; Lee, Seung Jun

    2009-04-01

    SiC coating layer has been introduced as protective layer in TRISO nuclear fuel particle of high temperature gas cooled reactor (HTGR) due to excellent mechanical stability at high temperature. It is important to study for high temperature stability in SiC coating layers, because TRISO fuel particles were operating at high temperature around 1000 .deg. C. In this study, the nanoindentation test and micro tensile test were conducted in order to measure the mechanical properties of SiC coating layers at elevated temperature. SiC coating film was fabricated on the carbon substrate using chemical vapor deposition process with different microstructures and thicknesses. Nanoindentation test was performed for the analysis of the hardness, modulus and creep properties up to 500 .deg. C. Impression creep method applied to nanoindentation and creep properties of SiC coating layers were characterized by nanoindentation creep test. The fracture strength of SiC coating layers was measured by the micro tensile method at room temperature and 500 .deg. C. From the results, we can conclude that the hardness and fracture strength are decreased with temperature and no significant change in the modulus is observed with increase in temperature. The deformation mechanism for indentation creep and creep rate changes as the testing temperature increased

  9. Tema 8. Principis físics dels semiconductors (Resum)

    OpenAIRE

    Beléndez Vázquez, Augusto

    2011-01-01

    Resum del "Tema 8. Principis físics dels semiconductors" de l'assignatura "Fonaments Físics de l'Enginyeria I" de "Grau en Enginyeria en So i Imatge" impartit a l'Escola Politècnica Superior de la Universitat d'Alacant.

  10. Broadband S-band class E HPA

    NARCIS (Netherlands)

    Wanum, M.; van Dijk, R.; de Hek, A.P.; van Vliet, Frank Edward

    2009-01-01

    A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 times 2.8 mm2.

  11. Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

    International Nuclear Information System (INIS)

    Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

    1985-01-01

    Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

  12. Reflood Heat Transfer in SiC and Graphene Oxide Coated Tube

    International Nuclear Information System (INIS)

    Kim, Kyung Mo; Lee, Seung Won; Bang, In Cheol

    2013-01-01

    The reflood tests have been performed flowing water into bare tube and nanoparticles coated tube at constant flow rate (3 cm/s). The quenching curves have been obtained at atmospheric pressure. Finally, Scanning Electron Microscopy (SEM) images are acquired and contact angles are measured in order to observe the surface structures and wettability effect on cooling performance. The quenching time decreases and quenching velocity increases as the coating time of nanoparticles on the tube increases, because the nanoparticles deposited on the tube destabilize and rupture the vapor film early in the effect of increased Leidenfrost point temperature. The SiC nanoparticles coated tubes have better quenching performance than GO nanoparticles coated tubes. The SEM images and contact angle observations proved the enhanced wettability and rough surface due to deposition of SiC nanoparticles. And the wettability of GO nanoparticles coated tubes shows the increase at 600 s coating. But, the wettability decreases on GO nanoparticles tube coated for 900 s despite the enhanced quenching performance. Thus, the porous structure affects to the better cooling performance in case of GO nanoparticles coated tubes

  13. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  14. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  15. Structural, bonding, anisotropic mechanical and thermal properties of Al4SiC4 and Al4Si2C5 by first-principles investigations

    Directory of Open Access Journals (Sweden)

    Liang Sun

    2016-09-01

    Full Text Available The structural, bonding, electronic, mechanical and thermal properties of ternary aluminum silicon carbides Al4SiC4 and Al4Si2C5 are investigated by first-principles calculations combined with the Debye quasi-harmonic approximation. All the calculated mechanical constants like bulk, shear and Young's modulus are in good agreement with experimental values. Both compounds show distinct anisotropic elastic properties along different crystalline directions, and the intrinsic brittleness of both compounds is also confirmed. The elastic anisotropy of both aluminum silicon carbides originates from their bonding structures. The calculated band gap is obtained as 1.12 and 1.04 eV for Al4SiC4 and Al4Si2C5 respectively. From the total electron density distribution map, the obvious covalent bonds exist between Al and C atoms. A distinct electron density deficiency sits between AlC bond along c axis among Al4SiC4, which leads to its limited tensile strength. Meanwhile, the anisotropy of acoustic velocities for both compounds is also calculated and discussed.

  16. An Extension of SIC Predictions to the Wiener Coactive Model.

    Science.gov (United States)

    Houpt, Joseph W; Townsend, James T

    2011-06-01

    The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

  17. CPM Signals for Satellite Navigation in the S and C Bands.

    Science.gov (United States)

    Xue, Rui; Sun, Yanbo; Zhao, Danfeng

    2015-06-05

    Frequency allocations in the L band suitable for global navigation satellite system (GNSS) services are getting crowded and system providers face an ever tougher job when they try to bring in new signals and services while maintaining radio frequency compatibility. With the successive opening of the S and C bands to GNSS service, the multi-band combined navigation is predicted to become a key technology for future high-precision positioning navigation systems, and a single modulation scheme satisfying the requirements in each band is a promising solution for reducing user terminal complexity. A universal modulation scheme based on the continuous phase modulation (CPM) family suitable for the above bands' demands is proposed. Moreover, this paper has put forward two specific CPM signals for the S and C bands, respectively. Then the proposed modulation schemes, together with existing candidates, are comprehensively evaluated. Simulation results show that the proposed CPM signals can not only satisfy the constraint condition of compatibility in different bands well and reduce user terminal complexity, but also provide superior performance in terms of tracking accuracy, multi-path mitigation and anti-jamming compared to other candidate modulation schemes.

  18. Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

    International Nuclear Information System (INIS)

    Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

    2014-01-01

    Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

  19. Synthesis of micro-sized interconnected Si-C composites

    Science.gov (United States)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  20. The effect of SiC particle size on the properties of Cu–SiC composites

    International Nuclear Information System (INIS)

    Celebi Efe, G.; Zeytin, S.; Bindal, C.

    2012-01-01

    Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

  1. InP-based photonic integrated circuit platform on SiC wafer.

    Science.gov (United States)

    Takenaka, Mitsuru; Takagi, Shinichi

    2017-11-27

    We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

  2. Factors affecting the corrosion of SiC layer by fission product palladium

    International Nuclear Information System (INIS)

    Dewita, E.

    2000-01-01

    HTR is one of the advanced nuclear reactors which has inherent safety system, graphite moderated and helium gas cooled. In general, these reactors are designed with the TRISO coated particle consist of four coating layers that are porous pyrolytic carbon (PyC). inner dense PyC (IPyC), silicon carbide (SiC), and outer dense PyC (OPyC). Among the four coating layers, the SiC plays an important role beside in retaining metallic fission products, it also provides mechanical strength to fuel particle. However, results of post irradiation examination indicate that fission product palladium can react with and corrode SiC layer, This assessment is conducted to get the comprehension about resistance of SiC layer on irradiation effects, especially in order to increase the fuel bum-up. The result of this shows that the corrosion of SiC layer by fission product palladium is beside depend on the material characteristics of SiC, and also there are other factors that affect on the SiC layer corrosion. Fuel enrichment, bum-up, and irradiation time effect on the palladium flux in fuel kernel. While, the fuel density, vapour pressure of palladium (the degree depend on the irradiation temperature and kernel composition) effect on palladium migration in fuel particle. (author)

  3. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    Unknown

    SiC fibre by chemical vapour deposition on tungsten filament ... CMCs), in defence and industrial applications. SiC has attractive ... porosity along with chemical purity. This is lacking .... reactor. Since mercury is very toxic it should be removed.

  4. The annealing effects on irradiated SiC piezo resistive pressure sensor

    International Nuclear Information System (INIS)

    Almaz, E.; Blue, T. E.; Zhang, P.

    2009-01-01

    The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

  5. Recent progress of ultrahigh voltage SiC devices for particle accelerator

    International Nuclear Information System (INIS)

    Fukuda, Kenji; Tsuji, Takashi; Shiomi, Hiromu; Mizushima, Tomonori; Yonezawa, Yoshiyuki; Kondo, Chikara; Otake, Yuji

    2016-01-01

    Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)

  6. Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic

    International Nuclear Information System (INIS)

    Reau, A.

    2008-01-01

    Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC f /SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC f /SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

  7. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2016-09-15

    Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

  8. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao

    2016-07-25

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  9. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

    2016-01-01

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  10. Energy efficiency improvement target for SIC 34 - fabricated metal products. Revised target support document

    Energy Technology Data Exchange (ETDEWEB)

    Byrer, T. G.; Billhardt, C. F.; Farkas, M. S.

    1977-02-15

    In accordance with section 374 of the Energy Policy and Conservation Act (EPCA), Pub. L. 94-163, the Federal Energy Administration (FEA) proposed industrial energy efficiency improvement targets for the ten most energy-consumptive manufacturing industries in the U.S. Following public hearings and a review of the comments made, the final targets for Fabricated Metal Products (SIC 34) were established and are described. Using 1972 data on the energy consumed to produce specific metal products, it was concluded that a 24% reduction in energy consumption for SIC 34 is a viable goal for achievement by 1980. (ERA citation 04:045006)

  11. Wear behavior of AA 5083/SiC nano-particle metal matrix composite: Statistical analysis

    Science.gov (United States)

    Hussain Idrisi, Amir; Ismail Mourad, Abdel-Hamid; Thekkuden, Dinu Thomas; Christy, John Victor

    2018-03-01

    This paper reports study on statistical analysis of the wear characteristics of AA5083/SiC nanocomposite. The aluminum matrix composites with different wt % (0%, 1% and 2%) of SiC nanoparticles were fabricated by using stir casting route. The developed composites were used in the manufacturing of spur gears on which the study was conducted. A specially designed test rig was used in testing the wear performance of the gears. The wear was investigated under different conditions of applied load (10N, 20N, and 30N) and operation time (30 mins, 60 mins, 90 mins, and 120mins). The analysis carried out at room temperature under constant speed of 1450 rpm. The wear parameters were optimized by using Taguchi’s method. During this statistical approach, L27 Orthogonal array was selected for the analysis of output. Furthermore, analysis of variance (ANOVA) was used to investigate the influence of applied load, operation time and SiC wt. % on wear behaviour. The wear resistance was analyzed by selecting “smaller is better” characteristics as the objective of the model. From this research, it is observed that experiment time and SiC wt % have the most significant effect on the wear performance followed by the applied load.

  12. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

  13. A comparative cepstral based analysis of simulated and measured S-band and X-band radar Doppler spectra of human motion

    CSIR Research Space (South Africa)

    Van Eeden, WD

    2015-10-01

    Full Text Available targets. It is also shown that, whereas the motion of most body parts of a human target can be observed in the X-band data, only the main torso sway can be observed at S-band. This implies that X-band data is well suited to cepstrum based human motion...

  14. TiC/Ti3SiC2复合材料的制备及其性能研究%Preparation and properties of TiC/Ti3SiC2 composites

    Institute of Scientific and Technical Information of China (English)

    贾换; 尹洪峰; 袁蝴蝶; 杨祎诺

    2012-01-01

    以粉末Ti,Si,TiC和炭黑为原料,采用反应热压烧结法制备TiC/Ti3SiC2复合材料.借助XRD和SEM研究TiC含量对TiC/Ti3SiC2复合材料相组成、显微结构及力学特性的影响.结果表明:通过热压烧结可以得到致密度较高的TiC/Ti3SiC2复合材料;引入TiC可以促进Ti3SiC2的生成,当引入TiC的质量分数达30%,TiC/Ti3SiC2复合材料的弯曲强度和断裂韧性分别为406.9 MPa,3.7 MPa·m1/2;复合材料中Ti3SiC2相以穿晶断裂为主,TiC晶粒易产生拔出.%TiC/Ti3SiC2 composites were fabricated by reactive hot pressing sintering method using the mixture powder of Ti, Si, C and TiC as raw material. The effect of TiC content on phase composition, microstructure and mechanical properties of TiC/Ti3SiC2 composites was investigated by X-ray diffraction and scanning electron microscopy. The results demonstrate that dense TiC/ Ti3SiC2 composites can be obtained by hot pressing. The addition of TiC into composites can enhance the formation of TisSiC2. When the additional content of TiC reaches 30% (mass fraction) , the flexural strength and fracture toughness of TiC/Ti3SiC2 composite are 406.9 MPa and 3.7 MPa·m-2, respectively. Ti3SiC2 phase displays intergranular fracture and TiC grain pulls out from Ti3SiC2 matrix when TiC/Ti3SiC2 composite fractures.

  15. Fission-product SiC reaction in HTGR fuel

    International Nuclear Information System (INIS)

    Montgomery, F.

    1981-01-01

    The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels

  16. SiC substrate defects and III-N heteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

    2003-05-21

    This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

  17. SiC substrate defects and III-N heteroepitaxy

    International Nuclear Information System (INIS)

    Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

    2003-01-01

    This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

  18. High Temperature Memories in SiC Technology

    OpenAIRE

    Ekström, Mattias

    2014-01-01

    This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

  19. Bunch monitor for an S-band electron linear accelerator

    International Nuclear Information System (INIS)

    Otake, Yuji; Nakahara, Kazuo

    1991-01-01

    The measurement of bunch characteristics in an S-band electron linear accelerator is required in order to evaluate the quality of accelerated electron beams. A new-type bunch monitor has been developed which combines micro-stripline technology with an air insulator and wall-current monitoring technology. The obtained time resolution of the monitor was more than 150 ps. This result shows that the monitor can handle the bunch number of an S-band linac. The structure of the monitor is suitable for being installed in the vacuum area, since it is constructed of only metal and ceramic parts. It can therefore easily be employed in an actual machine

  20. Defects induced by helium implantation in SiC

    International Nuclear Information System (INIS)

    Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

    2008-01-01

    SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

  1. SiC nanocrystals as Pt catalyst supports for fuel cell applications

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per; Skou, E.M.

    2013-01-01

    A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... on the nanocrystals of SiC-SPR and SiC-NS by the polyol method. The SiC substrates are subjected to an acid treatment to introduce the surface groups, which help to anchor the Pt nano-catalysts. These SiC based catalysts have been found to have a higher electrochemical activity than commercially available Vulcan...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications....

  2. Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements

    DEFF Research Database (Denmark)

    Magnuson, Martin; Mattesini, Maurizio; Van Nong, Ngo

    2012-01-01

    Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to aniso......Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin...... value of 4–6 μV/K. Employing a combination of polarized angle-dependent x-ray spectroscopy and density functional theory we directly show electronic structure anisotropy in inherently nanolaminated Ti3SiC2 single-crystal thin films as a model system. The density of Ti 3d and C 2p states at the Fermi...... level in the basal ab plane is about 40% higher than along the c axis. The Seebeck coefficient is related to electron and hole-like bands close to the Fermi level, but in contrast to ground state density functional theory modeling, the electronic structure is also influenced by phonons that need...

  3. Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B [IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

    2011-06-20

    Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

  4. Wide Band-Gap Semiconductors. 1991 Materials Research Society Symposium Proceedings

    Science.gov (United States)

    1992-09-01

    ORIGIN OF POLYTYPES IN SiC AND ZnS 507 Volker Heine, C. Cheng, G.E. Engel, and R.I. Needs EPITAXIAL MONOCRYSTALLINE SiC FILMS GROWN ON Si BY LOW...carbon film component. INTRODUCTION One of the most challenging problems in diamond film research has been the growth of high quality, monocrystalline ...developing ZnS EL full color flat panel displays is that the insufficient intensity of blue light emission ( two orders of magnitude lower than that of red

  5. Summary and Analysis of the U.S. Government Bat Banding Program

    Science.gov (United States)

    Ellison, Laura E.

    2008-01-01

    This report summarizes the U.S. Government Bat Banding Program (BBP) from 1932 to 1972. More than 2 million bands were issued during the program, of which approximately 1.5 million bands were applied to 36 bat species by scientists in many locations in North America including the U.S., Canada, Mexico, and Central America. Throughout the BBP, banders noticed numerous and deleterious effects on bats, leading to a moratorium on bat banding by the U.S. Fish and Wildlife Service, and a resolution to cease banding by the American Society of Mammalogists in 1973. One of the main points of the memorandum written to justify the moratorium was to conduct a 'detailed evaluation of the files of the bat-banding program.' However, a critical and detailed evaluation of the BBP was never completed. In an effort to satisfy this need, I compiled a detailed history of the BBP by examining the files and conducting a literature review on bat banding activities during the program. I also provided a case study in managing data and applying current mark-recapture theory to estimate survival using the information from a series of bat bands issued to Clyde M. Senger during the BBP. The majority of bands applied by Senger were to Townsend's big-eared bat (Corynorhinus townsendii), a species of special concern for many states within its geographic range. I developed a database management system for the bat banding records and then analyzed and modeled survival of hibernating Townsend's big-eared bats at three main locations in Washington State using Cormack-Jolly-Seber (CJS) open models and the modeling capabilities of Program MARK. This analysis of a select dataset in the BBP files provided relatively precise estimates of survival for wintering Townsend's big-eared bats. However, this dataset is unique due to its well-maintained and complete state and because there were high recapture rates over the course of banding; it is doubtful that other unpublished datasets of the same quality exist

  6. Stress Wave attenuation in SiC3D/Al Composite

    International Nuclear Information System (INIS)

    Yuan Chunyuan; Wang Yangwei; Li Guoju; Zhang Xu; Gao Jubin

    2013-01-01

    SiC 3D /Al composite is a kind of special composite with interpenetrating network microstructure. The attenuation properties of stress wave propagation along the SiC 3D /Al composite are studied by a Split Hopkinson Pressure Bar system and FEM simulations, and the attenuation mechanism is discussed in this paper. Results show that the attenuation rate of the stress wave in the composite is up to 1.73MPa·mm −1 . The reduction of the amplitude of waves is caused by that plenty of interfaces between SiC and Al within the composite acting with stress waves. When the incident plane wave reaches the SiC 3D /Al interface, reflection wave and transmission wave propagates in different directions along the irregular interface between SiC phase and aluminium phase due to the impedance mismatch of them, which leads to the divergence of stress wave. At the same time, some stress micro-focuses occurs in the aluminium phase for the complex wave superimposition, and some plastic deformation may take place within such micro-regions, which results in the consumption of stress wave energy. In conclusion, the stress wave attenuation is derived from divergence and consumption of stress wave.

  7. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

    Directory of Open Access Journals (Sweden)

    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  8. A comparative study on the tensile and impact properties of Kevlar, carbon, and S-glass/epoxy composites reinforced with SiC particles

    Science.gov (United States)

    Bulut, Mehmet; Alsaadi, Mohamad; Erkliğ, Ahmet

    2018-02-01

    Present study compares the tensile and impact characteristics of Kevlar, carbon and glass fiber reinforced composites with addition of microscale silicon carbide (SiC) within the common matrix of epoxy. The variation of tensile and impact strength values was explored for different content of SiC in the epoxy resin by weight (0, 5, 10, 15 and 20 wt%). Resulting failure characteristics were identified by assisting Charpy impact tests. The influence of interfacial adhesion between particle and fiber/matrix on failure and tensile properties was discussed from obtained results and scanning electron microscopy (SEM) figures. It is concluded from results that the content of SiC particles, and fiber types used as reinforcement are major parameters those effecting on tensile and impact resistance of composites as a result of different interface strength properties between particle-matrix and particle-fiber.

  9. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    International Nuclear Information System (INIS)

    Wang, Y.Q.; Wang, X.J.; Gong, W.X.; Wu, K.; Wang, F.H.

    2013-01-01

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiC p /AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage–time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO 2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO 2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiC p /AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  10. Biomimetic synthesis of cellular SiC based ceramics from plant ...

    Indian Academy of Sciences (India)

    Unknown

    SiC based materials so derived can be used in structural applications and in designing high temperature filters and catalyst supports. Keywords. Biomimetic synthesis; carbonaceous biopreform; biomorphic Si–SiC ceramic composites; porous cellular SiC ceramics. 1. Introduction. In recent years, there has been tremendous ...

  11. Reliability Concerns for Flying SiC Power MOSFETs in Space

    Science.gov (United States)

    Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J-M

    2018-01-01

    SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

  12. Pd/CeO2/SiC Chemical Sensors

    Science.gov (United States)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky

  13. Synthesis of boron nitride nanotubes with SiC nanowire as template

    International Nuclear Information System (INIS)

    Zhong, B.; Song, L.; Huang, X.X.; Wen, G.W.; Xia, L.

    2011-01-01

    Highlights: → Boron nitride nanotubes (BNNTs) have been fabricated using SiC nanowires as template. → SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. → A template self-sacrificing mechanism is responsible for the formation of BNNTs. -- Abstract: A novel template method for the preparation of boron nitride nanotubes (BNNTs) using SiC nanowire as template and ammonia borane as precursor is reported. We find out that the SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. The as-prepared products are well characterized by means of complementary analytical techniques. A possible formation mechanism is disclosed. The method developed here paves the way for large scale production of BNNTs.

  14. Nanocrystalline SiC film thermistors for cryogenic applications

    Science.gov (United States)

    Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

    2018-02-01

    We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

  15. Feasibility study of a SiC sandwich neutron spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2013-04-21

    Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

  16. Structural effects of field emission from GaN nanofilms on SiC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng-Cheng; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn; Zhu, Man-Kang; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China); Liu, Peng [Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China); Wang, Bi-Ben [College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)

    2014-04-21

    GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

  17. Plasmon-assisted photoluminescence enhancement of SiC nanocrystals by proximal silver nanoparticles

    International Nuclear Information System (INIS)

    Zhang, N.; Dai, D.J.; Fan, J.Y.

    2012-01-01

    Highlights: ► We studied metal surface plasmon-enhanced photoluminescence in SiC nanocrystals. ► The integrated emission intensity can be enhanced by 17 times. ► The coupling between SiC emission and Ag plasmon oscillation induces the enhancement. ► The enhancement is tunable with varied spacing thickness of electrolytes. - Abstract: Plasmon-enhanced photoluminescence has wide application potential in many areas, whereas the underlying mechanism is still in debate. We report the photoluminescence enhancement in SiC nanocrystal–Ag nanoparticle coupled system spaced by the poly(styrene sulfonic acid) sodium salt/poly(allylamine hydrochloride) polyelectrolyte bilayers. The integrated luminescence intensity can be improved by up to 17 times. Our analysis indicates that the strong coupling between the SiC nanocrystals and the surface plasmon oscillation of the silver nanoparticles is the major cause of the luminescence enhancement. These findings will help to understand the photoluminescence enhancement mechanism as well as widen the applications of the SiC nanocrystals in photonics and life sciences.

  18. The role of Pd in the transport of Ag in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2013-01-01

    This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

  19. The role of Pd in the transport of Ag in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2013-01-15

    This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

  20. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15......R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar...

  1. Strain-engineering of Janus SiC monolayer functionalized with H and F atoms

    Science.gov (United States)

    Drissi, L. B.; Sadki, K.; Kourra, M.-H.; Bousmina, M.

    2018-05-01

    Based on ab initio density functional theory calculations, the structural, electronic, mechanical, acoustic, thermodynamic, and piezoelectric properties of (F,H) Janus SiC monolayers are studied. The new set of derivatives shows buckled structures and different band gap values. Under strain, the buckling changes and the structures pass from semiconducting to metallic. The elastic limits and the metastable regions are determined. The Young's modulus and Poisson ratio reveal stronger behavior for the modified conformers with respect to graphene. The values of the Debye temperature make the new materials suitable for thermal application. Moreover, all the conformers show in-plane and out-of-plane piezoelectric responses comparable with known two-dimensional materials. If engineered, such piezoelectric Janus structures may be promising materials for various nanoelectromechanical applications.

  2. PhySIC: a veto supertree method with desirable properties.

    Science.gov (United States)

    Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

    2007-10-01

    This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

  3. Large area SiC coating technology of RBSC for semiconductor processing component

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

  4. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  5. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

  6. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  7. Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

    DEFF Research Database (Denmark)

    Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana

    2014-01-01

    Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide....... After 5 times coating, a 5.6 µm thick γ-Al2O3 layer was obtained. This membrane shows retention of ~75% for polyethylene glycol molecules with Mn of 8 and 35 kDa, indicating that, despite their intrinsic surface roughness, commercial SiC microfiltration tubes can be applied as carrier for thin...... ultrafiltration membranes. This work also indicates that an improvement of the commercial SiC support surface smoothness may greatly enhance permeance and selectivity of Υ-Al2O3 ultrafiltration membranes by allowing the deposition of thinner defect-free layers....

  8. Prevalence of Complement-Mediated Cell Lysis-like Gene (sicG) in Streptococcus dysgalactiae subsp. equisimilis Isolates From Japan (2014-2016).

    Science.gov (United States)

    Takahashi, Takashi; Fujita, Tomohiro; Shibayama, Akiyoshi; Tsuyuki, Yuzo; Yoshida, Haruno

    2017-07-01

    Streptococcus dysgalactiae subsp. equisimilis (SDSE; a β-hemolytic streptococcus of human or animal origin) infections are emerging worldwide. We evaluated the clonal distribution of complement-mediated cell lysis-like gene (sicG) among SDSE isolates from three central prefectures of Japan. Group G/C β-hemolytic streptococci were collected from three institutions from April 2014 to March 2016. Fifty-five strains (52 from humans and three from animals) were identified as SDSE on the basis of 16S rRNA sequencing data.; they were obtained from 25 sterile (blood, joint fluid, and cerebrospinal fluid) and 30 non-sterile (skin-, respiratory tract-, and genitourinary tract-origin) samples. emm genotyping, multilocus sequence typing, sicG amplification/sequencing, and random amplified polymorphic DNA (RAPD) analysis of sicG-positive strains were performed. sicG was detected in 30.9% of the isolates (16 human and one canine) and the genes from the 16 human samples (blood, 10; open pus, 3; sputum, 2; throat swab, 1) and one canine sample (open pus) showed the same sequence pattern. All sicG-harboring isolates belonged to clonal complex (CC) 17, and the most prevalent emm type was stG6792 (82.4%). There was a significant association between sicG presence and the development of skin/soft tissue infections. CC17 isolates with sicG could be divided into three subtypes by RAPD analysis. CC17 SDSE harboring sicG might have spread into three closely-related prefectures in central Japan during 2014-2016. Clonal analysis of isolates from other areas might be needed to monitor potentially virulent strains in humans and animals. © The Korean Society for Laboratory Medicine

  9. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3, the photol......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3...... the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...

  10. Qualification of SiC materials for fusion and fission reactors

    International Nuclear Information System (INIS)

    Ryazanov, Alexander

    2009-01-01

    Ceramic materials such as silicon carbide (SiC) and SiC/SiC composites are both considered, due to their high-temperature strength, pseudo-ductile fracture behavior and low-induced radioactivity, as candidate materials for fusion reactor (test blanket module for ITER) and high temperature gas-cooled reactors (HTGR). The radiation swelling and creep of SiC are very important physical phenomena that determine the radiation resistance of them in these reactors. Other important problem which exists especially in fusion reactor is an effect of accumulation of high concentrations of helium atoms in SiC (up to 15000-20000 at.ppm) due to (n,α) nuclear reaction on physical mechanical properties. An understanding of the physical mechanism of this phenomenon is very important for the investigations of helium atom effect on radiation swelling in SiC. In this report a compilation of non-irradiated and irradiated properties of SiC are provided and analyzed in terms of their application to fusion and high temperature gas cooled reactors. Special topic of this report is oriented on the micro structural changes in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and ion irradiations at elevated temperatures. The evolutions of various radiation induced defects including dislocation loops, network dislocations and cavities are presented here as a function of irradiation temperature and fluencies. These observations are discussed in relation with such irradiation phenomena in SiC as low temperature swelling and cavity swelling. One of the main difficulties in the radiation damage studies of SiC materials lies in the absence of theoretical models and interpretation of many physical mechanisms of radiation phenomena including the radiation swelling and creep. The point defects in ceramic materials are characterized by the charge states and they can have an effective charge. The internal effective electrical field is formed due to the accumulation of charged point

  11. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  12. Energy efficiency improvement target for SIC 34 - fabricated metal products

    Energy Technology Data Exchange (ETDEWEB)

    Byrer, T. G.; Billhardt, C. F.; Farkas, M. S.

    1977-03-15

    A March 15, 1977 revision of a February 15, 1977 document on the energy improvement target for the Fabricated Metal Products industry (SIC 34) is presented. A net energy savings in 1980 of 24% as compared with 1972 energy consumption in SIC 34 is considered a realistic goal. (ERA citation 04:045008)

  13. SiC Coating Process Development Using H-PCS in Supercritical CO2

    International Nuclear Information System (INIS)

    Park, Kwangheon; Jung, Wonyoung

    2013-01-01

    We tried SiC coating using supercritical fluids. Supercritical fluids are the substance exists over critical temperature and critical pressure. It is hard to expect that there would be a big change as single-solvent as the fluid is incompressible and the space between the molecules is almost steady. But the fluid which is being supercritical can bring a great change when it is changed its pressure near its critical point, showing its successive change in the density, viscosity, diffusion coefficient and the polarity. We have tested the 'H-PCS into SiC' coating experiment with supercritical CO 2 which has the high penetration, low viscosity as well as the high density and the high solubility that shows the property of the fluid. This experiment is for SiC coating using H-PCS in supercritical CO 2 . It shows the clear difference that the penetration of H-PCS into the SiC between dip coating method and using the supercritical CO 2 If we can make a metal cladding with SiC composites as a protective layer, the use of the cladding will be very broad and diverse. Inherent safe nuclear fuels can be possible that can stand under severe accident conditions. SiC is known to be one of a few materials that maintain very corrosion-resistant properties under tough corrosive environments. The metal cladding with SiC composites as a protective layer will be a high-tech product that can be used in many applications including chemical, material, and nuclear engineering and etc

  14. Tema 8. Principis físics dels semiconductors (Guia del tema)

    OpenAIRE

    Beléndez Vázquez, Augusto

    2011-01-01

    Guia del "Tema 8. Principis físics dels semiconductors" de l'assignatura "Fonaments Físics de l'Enginyeria I" de "Grau en Enginyeria en So i Imatge" impartit a l'Escola Politècnica Superior de la Universitat d'Alacant.

  15. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  16. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  17. Micromechanics of fiber pull-out and crack bridging in SCS-6 SiC- CVD SiC composite system at high-temperature

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1993-01-01

    A micro mechanical model is developed to study fiber pull-out and crack bridging in fiber reinforced SiC-SiC composites with time dependent thermal creep. By analyzing the creep data for monolithic CVD SiC (matrix) and the SCS-6 SiC fibers in the temperature range 900-1250 degrees C, it is found that the matrix creep rates can be ignored in comparison to those of fibers. Two important relationships are obtained: (1) a time dependent relation between the pull-out stress and the relative sliding distance between the fiber and matrix for the purpose of analyzing pull-out experiments, and (2) the relation between the bridging stress and the crack opening displacement to be used in studying the mechanics and stability of matrix crack bridged by fibers at high temperatures. The present analysis can also be applied to Nicalon-reinforced CVD SiC matrix system since the Nicalon fibers exhibit creep characteristics similar to those of the SCS-6 fibers

  18. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  19. SiC Sensors in Extreme Environments: Real-time Hydrogen Monitoring for Energy Plant Applications

    Science.gov (United States)

    Ghosh, Ruby

    2008-03-01

    Clean, efficient energy production, such as the gasification of coal (syngas), requires physical and chemical sensors for exhaust gas monitoring as well as real-time control of the combustion process. Wide-bandgap semiconducting materials systems can meet the sensing demands in these extreme environments consisting of chemically corrosive gases at high temperature and pressure. We have developed a SiC based micro-sensor for detection of hydrogen containing species with millisecond response at 600 C. The sensor is a Pt-SiO2-SiC device with a dense Pt catalytic sensing film, capable of withstanding months of continuous high temperature operation. The device was characterized in robust sensing module that is compatible with an industrial reactor. We report on the performance of the SiC sensor in a simulated syngas ambient at 370 C containing the common interferants CO2, CH4 and CO [1]. In addition we demonstrate that hours of exposure to >=1000 ppm H2S and 15% water vapor does not degrade the sensor performance. To elucidate the mechanisms responsible for the hydrogen response of the sensor we have modeled the hydrogen adsorptions kinetics at the internal Pt-SiO2 interface, using both the Tempkin and Langmuir isotherms. Under the conditions appropriate for energy plant applications, the response of our sensor is significantly larger than that obtained from ultra-high vacuum electrochemical sensor measurements at high temperatures. We will discuss the role of morphology, at the nano to micro scale, on the enhanced catalytic activity observed for our Pt sensing films in response to a heated hydrogen gas stream at atmospheric pressure. [1] R. Loloee, B. Chorpening, S. Beers & R. Ghosh, Hydrogen monitoring for power plant applications using SiC sensors, Sens. Actuators B:Chem. (2007), doi:10.1016/j.snb.2007.07.118

  20. SYLRAMICTM SiC fibers for CMC reinforcement

    International Nuclear Information System (INIS)

    Jones, Richard E.; Petrak, Dan; Rabe, Jim; Szweda, Andy

    2000-01-01

    Dow Corning researchers developed SYLRAMIC SiC fiber specifically for use in ceramic-matrix composite (CMC) components for use in turbine engine hot sections where excellent thermal stability, high strength and high thermal conductivity are required. This is a stoichiometric SiC fiber with a high degree of crystallinity, high tensile strength, high tensile modulus and good thermal conductivity. Owing to the small diameter, this textile-grade fiber can be woven into 2-D and 3-D structures for CMC fabrication. These properties are also of high interest to the nuclear community. Some initial studies have shown that SYLRAMIC fiber shows very good dimensional stability in a neutron flux environment, which offers further encouragement. This paper will review the properties of SYLRAMIC SiC fiber and then present the properties of polymer impregnation and pyrolysis (PIP) processed CMC made with this fiber at Dow Corning. While these composites may not be directly applicable to applications of interest to this audience, we believe that the properties shown will give good evidence that the fiber should be suitable for high temperature structural applications in the nuclear arena

  1. ToF-MEIS stopping measurements in thin SiC films

    International Nuclear Information System (INIS)

    Linnarsson, M.K.; Khartsev, S.; Primetzhofer, D.; Possnert, G.; Hallén, A.

    2014-01-01

    Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS

  2. Feasibility study on the application of carbide (ZrC, SiC) for VHTR

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

    2006-08-15

    A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

  3. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  4. Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

    International Nuclear Information System (INIS)

    Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

    2013-01-01

    The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

  5. Determination of irradiation temperature using SiC temperature monitors

    International Nuclear Information System (INIS)

    Maruyama, Tadashi; Onose, Shoji

    1999-01-01

    This paper describes a method for detecting the change in length of SiC temperature monitors and a discussion is made on the relationship between irradiation temperature and the recovery in length of SiC temperature monitors. The SiC specimens were irradiated in the experimental fast reactor JOYO' at the irradiation temperatures around 417 to 645degC (design temperature). The change in length of irradiated specimens was detected using a dilatometer with SiO 2 glass push rod in an infrared image furnace. The temperature at which recovery in macroscopic length begins was obtained from the annealing intersection temperature. The results of measurements indicated that a difference between annealing intersection temperature and the design temperature sometimes reached well over ±100degC. A calibration method to obtain accurate irradiation temperature was presented and compared with the design temperature. (author)

  6. Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Hedhili, Mohamed Nejib; Anjum, Dalaver H. [Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Joyce, Hannah J. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

    2016-07-18

    We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  7. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-01

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

  8. Evolution of Radiation Induced Defects in SiC: A Multiscale Simulation Approach

    Science.gov (United States)

    Jiang, Hao

    Because of various excellent properties, SiC has been proposed for many applications in nuclear reactors including cladding layers in fuel rod, fission products container in TRISO fuel, and first wall/blanket in magnetic controlled fusion reactors. Upon exposure to high energy radiation environments, point defects and defect clusters are generated in materials in amounts significantly exceeding their equilibrium concentrations. The accumulation of defects can lead to undesired consequences such as crystalline-to-amorphous transformation1, swelling, and embrittlement, and these phenomena can adversely affect the lifetime of SiC based components in nuclear reactors. It is of great importance to understand the accumulation process of these defects in order to estimate change in properties of this material and to design components with superior ability to withstand radiation damages. Defect clusters are widely in SiC irradiated at the operation temperatures of various reactors. These clusters are believed to cause more than half of the overall swelling of irradiated SiC and can potentially lead to lowered thermal conductivity and mechanical strength. It is critical to understand the formation and growth of these clusters. Diffusion of these clusters is one importance piece to determine the growth rate of clusters; however it is unclear so far due to the challenges in simulating rare events. Using a combination of kinetic Activation Relaxation Technique with empirical potential and ab initio based climbing image nudged elastic band method, I performed an extensive search of the migration paths of the most stable carbon tri-interstitial cluster in SiC. This research reveals paths with the lowest energy barriers to migration, rotation, and dissociation of the most stable cluster. Based on these energy barriers, I concluded defect clusters are thermally immobile at temperatures lower than 1500 K and can dissociate into smaller clusters and single interstitials at

  9. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  10. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  11. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao

    2015-01-01

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  12. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

    Directory of Open Access Journals (Sweden)

    Xinghao Liang

    2018-02-01

    Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

  13. Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Malashchonak, M.V.; Streltsov, E.A.; Mazanik, A.V.; Kulak, A.I.; Poznyak, S.K.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Gaiduk, P.I.

    2015-01-01

    Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m 2 g −1 ) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y max = 90%; 0.1 M Na 2 S + 0.1 M Na 2 SO 3 ), but also in the sub-band-gap (SBG) range (Y max = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E U ) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E U = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E U = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E U = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles

  14. Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

    2015-08-31

    Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.

  15. High Peak Power Test and Evaluation of S-band Waveguide Switches

    Science.gov (United States)

    Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

    1997-05-01

    The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

  16. Effects of SiC and MgO on aluminabased ceramic foams filters

    OpenAIRE

    CAO Da-li; ZHOU Jing-yi; JIN Yong-ming

    2007-01-01

    Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phas...

  17. Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

    International Nuclear Information System (INIS)

    Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

    2006-01-01

    The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

  18. Microstructure of SiC ceramics fabricated by pyrolysis of electron beam irradiated polycarbomethylsilane containing precursors

    International Nuclear Information System (INIS)

    Xu Yunshu; Tanaka, Shigeru

    2003-01-01

    A modified gel-casting method was developed to form the ceramics precursor matrix by using polycarbomehylsilane (PCMS) and SiC powder. The polymer precursor was mixed with SiC powder in toluene, and then the slurry samples were cast into designed shapes. The pre-ceramic samples were then irradiated by 2.0 MeV electron beam generated by a Cockcroft-Walton type accelerator in He gas flow to about 15 MGy. The cured samples were pyrolyzed and sintered into SiC ceramics at 1300degC in Ar gas. The modified gel-casting method leaves almost no internal stress in the pre-ceramic samples, and the electron beam curing not only diminished the amount of pyrolysis gaseous products but also enhanced the interface binding of the polymer converted SiC and the grains of SiC powder. Optical microscope, AFM and SEM detected no visible internal or surface cracks in the final SiC ceramics matrix. A maximum value of 122 MPa of flexural strength of the final SiC ceramics was achieved. (author)

  19. S-band 45 MW peak power test facility at RRCAT

    International Nuclear Information System (INIS)

    Wanmode, A. Yashwant; Reddy, Sivananda; Mulchandani, J.; Mohania, Praveen; Shrivastava, B. Purushottam

    2015-01-01

    RRCAT is engaged in the design and development of high energy electron LINAC as future injectors for the Booster Synchrotron for Indus-1 and Indus-2 SRS. The high energy LINAC will need microwave power over 30 MW depending on the number of structures to be energized. In order to have advance preparations for this development a 45 MW S-Band test facility has been designed and developed at RRCAT. The test stand is built around a 45 MW peak power S-band pulsed klystron, A conventional pulse forming network based modulator for klystron has been designed and developed. The WR-284 waveguide transmission system consisting of dual directional couplers, SF 6 gas pressurization unit, high power waveguide load and arc sensor has been developed and interfaced with the klystron. The klystron has been successfully tested up to 30 MW peak power at 2856 MHz on SF 6 pressurized waveguide line. A solid state S Band driver amplifier up to 1 kW output power was designed developed for driving the klystron. This paper describes the results of 30 MW peak power test of this facility. (author)

  20. Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

    Energy Technology Data Exchange (ETDEWEB)

    Chen Libao [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Xie Xiaohua [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Wang Baofeng [Department of Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Wang Ke [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xie Jingying [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100049 (China)]. E-mail: jyxie@mail.sim.ac.cn

    2006-07-15

    Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g{sup -1} and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly.

  1. Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

    International Nuclear Information System (INIS)

    Chen Libao; Xie Xiaohua; Wang Baofeng; Wang Ke; Xie Jingying

    2006-01-01

    Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g -1 and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly

  2. A Highly intense DC muon source, MuSIC and muon CLFV search

    International Nuclear Information System (INIS)

    Hino, Y.; Kuno, Y.; Sato, A.; Sakamoto, H.; Matsumoto, Y.; Tran, N.H.; Hashim, I.H.; Fukuda, M.; Hayashida, Y.; Ogitsu, T.; Yamamoto, A.; Yoshida, M.

    2014-01-01

    MuSIC is a new muon facility, which provides the world's highest intense muon beam with continuous time structure at Research Center of Nuclear Physics (RCNP), Osaka University. It's intensity is designed to be 10 8 muons per second with only 0.4 kW proton beam. Such a high intense muon beam is very important for searches of rare decay processes, for example search for the muon to electron conversion

  3. Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

    Energy Technology Data Exchange (ETDEWEB)

    Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

    2001-07-01

    This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

  4. A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

    Science.gov (United States)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2018-04-01

    We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

  5. Second harmonic generation spectroscopy in the Reststrahl band of SiC using an infrared free-electron laser

    Energy Technology Data Exchange (ETDEWEB)

    Paarmann, Alexander, E-mail: alexander.paarmann@fhi-berlin.mpg.de; Razdolski, Ilya; Melnikov, Alexey; Gewinner, Sandy; Schöllkopf, Wieland; Wolf, Martin [Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin (Germany)

    2015-08-24

    The Reststrahl spectral region of silicon carbide has recently attracted much attention owing to its potential for mid-infrared nanophotonic applications based on surface phonon polaritons (SPhPs). Studies of optical phonon resonances responsible for surface polariton formation, however, have so far been limited to linear optics. In this Letter, we report the first nonlinear optical investigation of the Reststrahl region of SiC, employing an infrared free-electron laser to perform second harmonic generation (SHG) spectroscopy. We observe two distinct resonance features in the SHG spectra, one attributed to resonant enhancement of the nonlinear susceptibility χ{sup (2)} and the other due to a resonance in the Fresnel transmission. Our work clearly demonstrates high sensitivity of mid-infrared SHG to phonon-driven phenomena and opens a route to studying nonlinear effects in nanophotonic structures based on SPhPs.

  6. Detection and Analysis of Particles with Failed SiC in AGR-1 Fuel Compacts

    International Nuclear Information System (INIS)

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M.; Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A.

    2014-01-01

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of "1"3"4Cs and "1"3"7Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during the AGR-1 irradiation test or post-irradiation safety testing at 1600– 1800°C were identified, and individual particles with abnormally low cesium retention were sorted out with the ORNL Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking. (author)

  7. Electronic structure of the misfit layer compound (SnS)(1.20)TiS2 : Band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, CM; deGroot, RA; Wiegers, GA; Haas, C

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  8. Electronic structure of the misfit layer compound (SnS)1.20TiS2 : band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  9. Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

    KAUST Repository

    Kahaly, M. Upadhyay

    2013-07-01

    The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

  10. Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

    KAUST Repository

    Kahaly, M. Upadhyay; Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo

    2013-01-01

    The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

  11. Airborne S-Band SAR for Forest Biophysical Retrieval in Temperate Mixed Forests of the UK

    Directory of Open Access Journals (Sweden)

    Ramesh K. Ningthoujam

    2016-07-01

    Full Text Available Radar backscatter from forest canopies is related to forest cover, canopy structure and aboveground biomass (AGB. The S-band frequency (3.1–3.3 GHz lies between the longer L-band (1–2 GHz and the shorter C-band (5–6 GHz and has been insufficiently studied for forest applications due to limited data availability. In anticipation of the British built NovaSAR-S satellite mission, this study evaluates the benefits of polarimetric S-band SAR for forest biophysical properties. To understand the scattering mechanisms in forest canopies at S-band the Michigan Microwave Canopy Scattering (MIMICS-I radiative transfer model was used. S-band backscatter was found to have high sensitivity to the forest canopy characteristics across all polarisations and incidence angles. This sensitivity originates from ground/trunk interaction as the dominant scattering mechanism related to broadleaved species for co-polarised mode and specific incidence angles. The study was carried out in the temperate mixed forest at Savernake Forest and Wytham Woods in southern England, where airborne S-band SAR imagery and field data are available from the recent AirSAR campaign. Field data from the test sites revealed wide ranges of forest parameters, including average canopy height (6–23 m, diameter at breast-height (7–42 cm, basal area (0.2–56 m2/ha, stem density (20–350 trees/ha and woody biomass density (31–520 t/ha. S-band backscatter-biomass relationships suggest increasing backscatter sensitivity to forest AGB with least error between 90.63 and 99.39 t/ha and coefficient of determination (r2 between 0.42 and 0.47 for the co-polarised channel at 0.25 ha resolution. The conclusion is that S-band SAR data such as from NovaSAR-S is suitable for monitoring forest aboveground biomass less than 100 t/ha at 25 m resolution in low to medium incidence angle range.

  12. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun; Schwingenschlö gl, Udo

    2010-01-01

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion

  13. SiC Composite for Fuel Structure Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yueh, Ken [Electric Power Research Inst. (EPRI), Charlotte, NC (United States)

    2017-12-22

    Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureable weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO2 and CO2. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO4 and ZrSiO4 are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO4 during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.

  14. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

  15. The physics of epitaxial graphene on SiC(0001)

    International Nuclear Information System (INIS)

    Kageshima, H; Hibino, H; Tanabe, S

    2012-01-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  16. Interracial Structure and Formation Mechanism of Ultrasonic-assisted Brazed Joint of SiC Ceramics with Al-12Si Filler Metals in Air

    Institute of Scientific and Technical Information of China (English)

    Xiaoguang Chen; Ruishan Xie; Zhiwei Lai; Lei Liu; Jiuchun Yan; Guisheng Zou

    2017-01-01

    Ultrasonic-assisted brazing of SiC ceramics was performed by filling with an Al--12Si alloy at a low temperature of 620 ℃ in air.The interfacial characteristics and formation mechanism were investigated.The joint shear strength reached 84-94 MPa using the ultrasonic time of 2-16 s.The fracture morphology showed that the fracture path initiated and propagated in the joint alloy.The thin film of amorphous SiO2 that formed on the SiC surface was non-uniformly decomposed and diffused into the liquid Al-12Si alloy under the cavitation erosion effect of ultrasound.Abnormal isolated blocks of Al2SiO5 compounds formed at the interface between Al--12Si and a thicker SiO2 layer formed during the thermal oxidation treatment of the SiC ceramic.The SiO2 layer on the SiC ceramic did not hinder or impair the wetting and bonding process,and a stronger bond could form between Al-12Si and SiO2 or SiC in ultrasonicassisted brazing.

  17. Fluorescent SiC with pseudo-periodic moth-eye structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-01-01

    White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving sources. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter...... to enhance the extraction efficiency, we present a simple method to fabricate the pseudo-periodic moth-eye structures on the surface of the fluorescent SiC. A thin gold layer is deposited on the fluorescent SiC first. Then the thin gold layer is treated by rapid thermal processing. After annealing, the thin...... gold layer turns into discontinuous nano-islands. The average size of the islands is dependent on the annealing condition which could be well controlled. By using the reactive-ion etching, pseudo-periodic moth-eye structures would be obtained using the gold nano-islands as a mask layer. Reactive...

  18. Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

    International Nuclear Information System (INIS)

    Reza-E-Rabby, M.; Jeelani, Sh.; Rangari, V. K.

    2015-01-01

    The SiC nanoparticles (NPs) were sonochemically coated with Octa Isobutyl (OI) polyhedral oligomeric silsesquioxane (POSS) to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD) techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM) analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nano composites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin

  19. Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

    Directory of Open Access Journals (Sweden)

    Md. Reza-E-Rabby

    2015-01-01

    Full Text Available The SiC nanoparticles (NPs were sonochemically coated with OctaIsobutyl (OI polyhedral oligomeric silsesquioxane (POSS to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS, Fourier transform infrared spectroscopy (FTIR, and X-ray diffraction (XRD techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nanocomposites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin.

  20. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  1. High temperature oxidation behavior of SiC coating in TRISO coated particles

    International Nuclear Information System (INIS)

    Liu, Rongzheng; Liu, Bing; Zhang, Kaihong; Liu, Malin; Shao, Youlin; Tang, Chunhe

    2014-01-01

    Highlights: • High temperature oxidation tests of SiC coating in TRISO particles were carried out. • The dynamic oxidation process was established. • Oxidation mechanisms were proposed. • The existence of silicon oxycarbides at the SiO 2 /SiC interface was demonstrated. • Carbon was detected at the interface at high temperatures and long oxidation time. - Abstract: High temperature oxidation behavior of SiC coatings in tristructural-isotropic (TRISO) coated particles is crucial to the in-pile safety of fuel particles for a high temperature gas cooled reactor (HTGR). The postulated accident condition of air ingress was taken into account in evaluating the reliability of the SiC layer. Oxidation tests of SiC coatings were carried out in the ranges of temperature between 800 and 1600 °C and time between 1 and 48 h in air atmosphere. Based on the microstructure evolution of the oxide layer, the mechanisms and kinetics of the oxidation process were proposed. The existence of silicon oxycarbides (SiO x C y ) at the SiO 2 /SiC interface was demonstrated by X-ray photospectroscopy (XPS) analysis. Carbon was detected by Raman spectroscopy at the interface under conditions of very high temperatures and long oxidation time. From oxidation kinetics calculation, activation energies were 145 kJ/mol and 352 kJ/mol for the temperature ranges of 1200–1500 °C and 1550–1600 °C, respectively

  2. Growth of graphene from SiC{0001} surfaces and its mechanisms

    International Nuclear Information System (INIS)

    Norimatsu, Wataru; Kusunoki, Michiko

    2014-01-01

    Graphene, a one-atom-layer carbon material, can be grown by thermal decomposition of SiC. On Si-terminated SiC(0001), graphene nucleates at steps and grows layer-by-layer, and as a result a homogeneous monolayer or bilayer can be obtained. We demonstrate this mechanism both experimentally and theoretically. On the C-face (000 1-bar ), multilayer graphene nucleates not only at steps, but also on the terraces. These differences reflect the distinct differences in the reactivity of these faces. Due to its high quality and structural controllability, graphene on SiC{0001} surfaces will be a platform for high-speed graphene device applications. (paper)

  3. PhySIC_IST: cleaning source trees to infer more informative supertrees.

    Science.gov (United States)

    Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel J P; Ranwez, Vincent

    2008-10-04

    Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter.Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative

  4. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    This paper proposes a new method for the investigation of the short-circuit safe operation area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the variations in SiC MOSFET electrical parameters (e.g., short-circuit current and gate–source voltage). According...... to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short-circuit...

  5. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  6. Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs

    International Nuclear Information System (INIS)

    Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S.

    2012-01-01

    An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO 2 volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

  7. Failure probabilities of SiC clad fuel during a LOCA in public acceptable simple SMR (PASS)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youho, E-mail: euo@kaist.ac.kr; Kim, Ho Sik, E-mail: hskim25@kaist.ac.kr; NO, Hee Cheon, E-mail: hcno@kaist.ac.kr

    2015-10-15

    Highlights: • Graceful operating conditions of SMRs markedly lower SiC cladding stress. • Steady-state fracture probabilities of SiC cladding is below 10{sup −7} in SMRs. • PASS demonstrates fuel coolability (T < 1300 °C) with sole radiation in LOCA. • SiC cladding failure probabilities of PASS are ∼10{sup −2} in LOCA. • Cold gas gap pressure controls SiC cladding tensile stress level in LOCA. - Abstract: Structural integrity of SiC clad fuels in reference Small Modular Reactors (SMRs) (NuScale, SMART, IRIS) and a commercial pressurized water reactor (PWR) are assessed with a multi-layered SiC cladding structural analysis code. Featured with low fuel pin power and temperature, SMRs demonstrate markedly reduced incore-residence fracture probabilities below ∼10{sup −7}, compared to those of commercial PWRs ∼10{sup −6}–10{sup −1}. This demonstrates that SMRs can serve as a near-term deployment fit to SiC cladding with a sound management of its statistical brittle fracture. We proposed a novel SMR named Public Acceptable Simple SMR (PASS), which is featured with 14 × 14 assemblies of SiC clad fuels arranged in a square ring layout. PASS aims to rely on radiative cooling of fuel rods during a loss of coolant accident (LOCA) by fully leveraging high temperature tolerance of SiC cladding. An overarching assessment of SiC clad fuel performance in PASS was conducted with a combined methodology—(1) FRAPCON-SiC for steady-state performance analysis of PASS fuel rods, (2) computational fluid dynamics code FLUENT for radiative cooling rate of fuel rods during a LOCA, and (3) multi-layered SiC cladding structural analysis code with previously developed SiC recession correlations under steam environments for both steady-state and LOCA. The results show that PASS simultaneously maintains desirable fuel cooling rate with the sole radiation and sound structural integrity of fuel rods for over 36 days of a LOCA without water supply. The stress level of

  8. A Highly intense DC muon source, MuSIC and muon CLFV search

    Energy Technology Data Exchange (ETDEWEB)

    Hino, Y.; Kuno, Y.; Sato, A. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Sakamoto, H. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Research Center of Nuclear Physics, 10-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Matsumoto, Y.; Tran, N.H.; Hashim, I.H. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fukuda, M.; Hayashida, Y. [Research Center of Nuclear Physics, 10-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Ogitsu, T.; Yamamoto, A.; Yoshida, M. [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)

    2014-08-15

    MuSIC is a new muon facility, which provides the world's highest intense muon beam with continuous time structure at Research Center of Nuclear Physics (RCNP), Osaka University. It's intensity is designed to be 10{sup 8} muons per second with only 0.4 kW proton beam. Such a high intense muon beam is very important for searches of rare decay processes, for example search for the muon to electron conversion.

  9. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

    2006-07-15

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

  10. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    International Nuclear Information System (INIS)

    Xue Wenbin

    2006-01-01

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

  11. Band gap engineering of MoS{sub 2} upon compression

    Energy Technology Data Exchange (ETDEWEB)

    López-Suárez, Miquel, E-mail: miquel.lopez@nipslab.org [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); Neri, Igor [NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia (Italy); INFN Sezione di Perugia, via Pascoli, 06123 Perugia (Italy); Rurali, Riccardo [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC) Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

    2016-04-28

    Molybdenum disulfide (MoS{sub 2}) is a promising candidate for 2D nanoelectronic devices, which shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS{sub 2} upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally attainable strains (i.e., ±0.15). However, compressive strain can result in bucking that can prevent the use of large compressive strain. We then studied the stability of the compression, calculating the critical strain that results in the on-set of buckling for free-standing nanoribbons of different lengths. The results demonstrate that short structures, or few-layer MoS{sub 2}, show semi-conductor to metal transition upon compressive strain without bucking.

  12. High resolution emission Fourier transform infrared spectra of the 4p-5s and 5p-6s bands of ArH.

    Science.gov (United States)

    Baskakov, O I; Civis, S; Kawaguchi, K

    2005-03-15

    In the 2500-8500 cm(-1) region several strong emission bands of (40)ArH were observed by Fourier transform spectroscopy through a dc glow discharge in a mixture of argon and hydrogen. Rotational-electronic transitions of the two previously unstudied 4p-5s and 5p-6s,v = 0-0, bands of (40)ArH were measured and assigned in the 6060 and 3770 cm(-1) regions, respectively. A simultaneous fit of the emission transitions of the 4p-5s and 5p-6s bands and an extended set of transitions of the 6s-4p band observed by Dabrowski, Tokaryk, and Watson [J. Mol. Spectrosc. 189, 95 (1998)] and remeasured in the present work yielded consistent values of the spectroscopic parameters of the electronic states under investigation. In the branch of the 4p-5s band with transitions of type (Q)Q(f(3)e) we observed a narrowing in the linewidths with increasing rotational quantum number N. The rotational dependence of the linewidth is caused by predissociation of the 5s state by the repulsive ground 4s state through homogeneous coupling and changes in overlap integrals of the vibrational wave functions with the rotational level. Analysis was based on the Fermi's golden rule approximation model. In the 4p-5s band region a vibrational sequence ofv(')-v(")=1-1, 2-2, and 3-3 were recorded and a number of transitions belonging to the strongest (Q)Q(f(3)e) form branch of the 1-1 band were analyzed.

  13. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    International Nuclear Information System (INIS)

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-01-01

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K ¯ point as well as a characteristic peak in a C 1s core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped

  14. De interactie van SiC met Fe, Ni en hun legeringen

    NARCIS (Netherlands)

    Schiepers, R.C.J.

    1991-01-01

    De interactie tussen SiC en metalen gebaseerd op Fe en Ni is bestudeerd in het temperatuurtraject 700-1035°C door middel van vaste-stof-diffusiekoppels. In de koppels van SiC met Fe, Ni en hun legeringen treden hevige reakties op, die de vorming van een goede verbinding verhinderen. Door het grate

  15. Development of SiC Nanoparticles and Second Phases Synergistically Reinforced Mg-Based Composites Processed by Multi-Pass Forging with Varying Temperatures

    Directory of Open Access Journals (Sweden)

    Kaibo Nie

    2018-01-01

    Full Text Available In this study, SiC nanoparticles were added into matrix alloy through a combination of semisolid stirring and ultrasonic vibration while dynamic precipitation of second phases was obtained through multi-pass forging with varying temperatures. During single-pass forging of the present composite, as the deformation temperature increased, the extent of recrystallization increased, and grains were refined due to the inhibition effect of the increasing amount of dispersed SiC nanoparticles. A small amount of twins within the SiC nanoparticle dense zone could be found while the precipitated phases of Mg17Al12 in long strips and deformation bands with high density dislocations were formed in the particle sparse zone after single-pass forging at 350 °C. This indicated that the particle sparse zone was mainly deformed by dislocation slip while the nanoparticle dense zone may have been deformed by twinning. The yield strength and ultimate tensile strength of the composites were gradually enhanced through increasing the single-pass forging temperature from 300 °C to 400 °C, which demonstrated that initial high forging temperature contributed to the improvement of the mechanical properties. During multi-pass forging with varying temperatures, the grain size of the composite was gradually decreased while the grain size distribution tended to be uniform with reducing the deformation temperature and extending the forging passes. In addition, the amount of precipitated second phases was significantly increased compared with that after multi-pass forging under a constant temperature. The improvement in the yield strength of the developed composite was related to grain refinement strengthening and Orowan strengthening resulting from synergistical effect of the externally applied SiC nanoparticles and internally precipitated second phases.

  16. Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si ...... the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short....

  17. Manufacturing and characterization of porous SiC for flow channel inserts in dual-coolant blanket designs

    International Nuclear Information System (INIS)

    Bereciartu, Ainhoa; Ordas, Nerea; Garcia-Rosales, Carmen; Morono, Alejandro; Malo, Marta; Hodgson, Eric R.; Abella, Jordi; Sedano, Luis

    2011-01-01

    SiC is the primary candidate for the flow channel inserts in dual-coolant blanket concepts. Porous SiC ceramics are attractive candidates for this non-structural application, since they can satisfy the required properties through a low cost manufacturing route, compared to SiC f /SiC. This work shows first results of the manufacturing of porous SiC ceramics prepared with different amounts of Y 2 O 3 and Al 2 O 3 as sintering additives. C powders were used as pore-formers by their burnout during oxidation after sintering. Comparison of microstructure, porosity, flexural strength, thermal and electrical conductivity and corrosion under Pb-15.7Li of porous SiC without and with sintering additives is presented. The addition of 2.5 wt.% of Y 2 O 3 and Al 2 O 3 improves the mechanical properties, and reduces the thermal and electrical conductivity down to reasonable values. Preliminary corrosion tests under Pb-15.7 Li at 500 deg. C show that the absence of a dense coating on porous SiC leads to poor corrosion behavior.

  18. The development of SiC whisker fabrication technology for nuclear applications

    International Nuclear Information System (INIS)

    Kang, Thae Khapp; Kuk, Il Hiun; Kim, Chang Kyu; Lee, Jae Chun; Lee, Ho Jin; Park, Soon Dong; Im, Gyeong Soo

    1991-02-01

    Some important experiments for whisker growth reactions, fabrication processes, and experiments for fabricarion of whisker reinforced composites have been performed. In order to investigate growth reaction of SiC whiskers, a conventional carbothermic reaction was tested. Based on the results of carbothermic process, a new process called silicothermic reaction was planned and some basic experiments were performed. Reaction characteristics of silicon monoxide, core material for SiC whisker growth in both of the reactions were investigated for basic data. Additionally, a hydrofluoric acid leaching process was tested for developing SiC whisker recovery process, and powder metallurgy process and melt sqeeze process were tried to develop aluminum-SiC whisker composites. (Author)

  19. Rapid degradation of azo dye Direct Black BN by magnetic MgFe{sub 2}O{sub 4}-SiC under microwave radiation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Jia; Yang, Shaogui, E-mail: yangsg@nju.edu.cn; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

    2016-08-30

    of DB BN demonstrated that the C-S, C-N and azo bonds in the DB BN molecule were destroyed gradually. MW-induced ·OH and holes could be responsible for the efficient removal involved in the system. These findings make MgFe{sub 2}O{sub 4}-SiC become an excellent MW absorbent as well as an effective MW catalyst with rapid degradation of DB BN. Therefore, it may be promising for MgFe{sub 2}O{sub 4}-SiC under MW radiation to deal with various dyestuffs and other toxic organic pollutants.

  20. Small Incision Cataract Surgery (SICS with Clear Corneal Incision and SICS with Scleral Incision – A Comparative Study

    Directory of Open Access Journals (Sweden)

    Md Shafiqul Alam

    2014-01-01

    Full Text Available Background: Age related cataract is the leading cause of blindness and visual impairment throughout the world. With the advent of microsurgical facilities simple cataract extraction surgery has been replaced by small incision cataract surgery (SICS with posterior chamber intra ocular lens implant, which can be done either with clear corneal incision or scleral incision. Objective: To compare the post operative visual outcome in these two procedures of cataract surgery. Materials and method: This comparative study was carried out in the department of Ophthalmology, Delta Medical College & Hospital, Dhaka, Bangladesh, during the period of January 2010 to December 2012. Total 60 subjects indicated for age related cataract surgery irrespective of sex with the age range of 40-80 years with predefined inclusion and exclusion criteria were enrolled in the study. Subjects were randomly and equally distributed in 2 groups; Group A for SICS with clear corneal incision and group B for SICS with scleral incision. Post operative visual out come was evaluated by determining visual acuity and astigmatism in different occasions and was compared between groups. Statistical analysis was done by SPSS for windows version12. Results: The highest age incidence (43.3% was found between 61 to 70 years of age group. Among study subjects 40 were male and 20 were female. Preoperative visual acuity and astigmatism were evenly distributed between groups. Regarding postoperative unaided visual outcome, 6/12 or better visual acuity was found in 19.98% cases in group A and 39.6% cases in group B at 1st week. At 6th week 6/6 vision was found in 36.3% in Group A and 56.1% in Group B and 46.2% in group A and 66% in group B without and with correction respectively. With refractive correction, 6/6 vision was attained in 60% subjects of group A and 86.67% of group B at 8th week. Post operative visual acuity was statistically significant in all occasions. Postoperative astigmatism of

  1. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

    Science.gov (United States)

    Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

    2014-05-14

    Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

  2. Fabrication and characterization of SiC and ZrC composite coating on TRISO coated particle

    Energy Technology Data Exchange (ETDEWEB)

    Lee, H. G.; Lee, S. H.; Kim, D. J.; Park, J. Y.; Kim, W. J. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    SiC coating is widely suggested as structural materials for nuclear application due to its excellent high irradiation resistance properties and high temperature mechanical properties. SiC coating on TRistructural-ISOtropic (TRISO) coated fuel particles plays an important role as a protective layer from radioactive fission gas and a mechanical structural layer. TRISO coating layer was deposited on a spherical particle by a FBCVD method. The ZrO{sub 2} spherical particles were used as a simulant kernel. TRISO coating layers consisting of a porous buffer layer, an inner PyC layer were sequentially deposited before depositing SiC or ZrC coating layer. In order investigate the phase of each composite coating layer, Raman analysis was conducted. SiC, ZrC coating and SiC/ZrC composite coating on spherical particle were successfully deposited via FBCVD method by adjusting source gas flow rate. In the SiC and ZrC composite coating, SiC phase and ZrC phase were observed by XRD and SEM analysis. In the condition of 100 sccm of ZrCl{sub 4}, 25 sccm of CH{sub 4}, and 30 sccm of MTS, only two phases of SiC and ZrC were observed and two phases are located with clean grain boundary.

  3. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2010-11-09

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

  4. Effects of SiC and MgO on aluminabased ceramic foams filters

    Directory of Open Access Journals (Sweden)

    CAO Da-li

    2007-11-01

    Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

  5. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  6. Electrical measurement of radiation effect in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kanazawa, Satoshi; Kamiya, Koji; Kanno, Ikuo [Kyoto Univ. (Japan). Faculty of Engineering] [and others

    1996-04-01

    For aiming to limited resources and environmental conservations on the Earth, development of controlling element workable under high temperature environment was investigated so as to establish a high grade and optimum controlling system. In order to observe changes of electrical properties before and after irradiation and after annealing, and to investigate changes of carrier concentration and movability after irradiating neutron from reactor and accelerator for the SiC single crystal wafer, elucidation on neutron irradiation effect of SiC as well as finding an optimum method on nuclear conversion injection were investigated. For this reason, SiC surface was purified by its etching and was treated thermally at 1000degC for about 30 min. under argon gas atmosphere after vacuum depositing nickel on it. And then, it was irradiated neutron using Kyoto University reactor (LTL), Linac and University of Tokyo reactor (YAYOI) to measure changes of resistivity using van der Pauw. As a result, it was found that LTL irradiation data was under investigation of measuring method, that in Linac no meaning change was observed because of low irradiation, and that only YAYOI data showed increase of resistivity. (G.K.)

  7. Role of Defects in Swelling and Creep of Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  8. Role of Defects in Swelling and Creep of Irradiated SiC

    International Nuclear Information System (INIS)

    Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar; Katoh, Yutai

    2016-01-01

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  9. Control of the graphene growth rate on capped SiC surface under strong Si confinement

    International Nuclear Information System (INIS)

    Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

    2013-01-01

    Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

  10. Lunar Noise-Temperature Increase Measurements at S-Band, X-Band, and Ka-Band Using a 34-Meter-Diameter Beam-Waveguide Antenna

    Science.gov (United States)

    Morabito, D. D.

    2006-08-01

    The Moon radiates energy at infrared and microwave wavelengths, in addition to reflecting sunlight at optical wavelengths. As a result, an antenna pointed at or near the Moon will cause an increase in receiver noise temperature that needs to be accounted for in telemetry, radio science, or ranging link budgets. The Deep Space Network may be required to use its antennas in future lunar robotic or human missions, and thus it is important to understand the nature of this temperature increase as a function of observing frequency, lunar phase, and angular offset of the antenna beam from the center of the lunar disk. This article quantifies such a set of measurements acquired at DSS 13, a 34-m-diameter research and development beam-waveguide antenna located at Goldstone, California, at three different telecommunication frequencies, S-band (2.3 GHz), X-band (8.4 GHz), and Ka-band (32 GHz), over a wide range of lunar phase, for both disk-centered and limb-centered positions of the antenna beam.

  11. High efficiency three-phase power factor correction rectifier using SiC switches

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Nymand, Morten

    2017-01-01

    This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

  12. Testing of porous SiC with dense coating under relevant conditions for Flow Channel Insert application

    Energy Technology Data Exchange (ETDEWEB)

    Ordás, N., E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Bereciartu, A.; García-Rosales, C. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Moroño, A.; Malo, M.; Hodgson, E.R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abellà, J.; Colominas, S. [Institut Químic de Sarrià, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, L. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

    2014-10-15

    Highlights: • Porous SiC coated by CVD with a dense coating was developed for Flow Channel Inserts (FCI) in dual-coolant blanket concept. • Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives. • Flexural strength, thermal and electrical conductivity, and microstructure of uncoated and coated porous SiC are presented. • Adhesion of coating to porous SiC and its corrosion behavior under Pb-17.5Li at 700 °C are shown. - Abstract: Thermally and electrically insulating porous SiC ceramics are attractive candidates for Flow Channel Inserts (FCI) in dual-coolant blanket concepts thanks to its relatively inexpensive manufacturing route. To prevent tritium permeation and corrosion by Pb-15.7 a dense coating has to be applied on the porous SiC. Despite not having structural function, FCI must exhibit sufficient mechanical strength to withstand strong thermal gradients and thermo-electrical stresses during operation. This work summarizes the results on the development of coated porous SiC for FCI. Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives and a carbonaceous phase as pore former. Sintering was performed in inert gas at 1850–1950 °C during 15 min to 3 h, followed by oxidation at 650 °C to eliminate the carbonaceous phase. The most promising bulk materials were coated with a ∼30 μm thick dense SiC by CVD. Results on porosity, bending tests, thermal and electrical conductivity are presented. The microstructure of the coating, its adhesion to the porous SiC and its corrosion behavior under Pb-17.5Li are also shown.

  13. The rheological properties of shear thickening fluid reinforced with SiC nanowires

    Directory of Open Access Journals (Sweden)

    Jianhao Ge

    Full Text Available The rheological properties of shear thickening fluid (STF reinforced with SiC nanowires were investigated in this paper. Pure STF consists of 56 vol% silica nano-particles and polyethylene glycol 400 (PEG 400 solvent was fabricated; and a specific amount of SiC nanowires were dispersed into this pure STF, and then the volume fraction of PEG400 was adjusted to maintain the volume fraction of solid phase in the STF at a constant of 56%. The results showed there was almost 30% increase in the initial and shear thickening viscosity of the STF reinforced with SiC nanowires compared to the pure STF. Combining with the hydrodynamic cluster theory, the effect of the mechanism of SiC nanowire on the viscosity of STF was discussed, and based on the experimental results, an analytical model of viscosity was used to describe the rheological properties of STF, which agreed with the experimental results. Keywords: Shear thickening fluid (STF, Nanowire, Rheology, Viscosity, Analytical model

  14. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  15. SiO 2/SiC interface proved by positron annihilation

    Science.gov (United States)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-06-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

  16. SiO2/SiC interface proved by positron annihilation

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

    2003-01-01

    We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2 /SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage (C-V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method

  17. A microscopic study of the S band in the generator co-ordinate approach

    International Nuclear Information System (INIS)

    Wuest, E.; Ansari, A.

    1985-04-01

    Using particle number and spin projected cranked Hartree-Fock-Bogolubov (CHFB) wave functions in the generator co-ordinate method (GCM) with the cranking frequency as a GC the shortcomings of the usual CHFB theory are removed and the ground as well as the s band are studied simultaneously. In particular, low-spin properties of the s band are discussed for a backbending nucleus 158 Dy. (author)

  18. Technique for measuring irradiation creep in polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Hamilton, M.L.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    A bend stress relaxation (BSR) test has been designed to examine irradiation enhanced creep in polycrystalline SiC fibers being considered for fiber reinforcement in SiC/SiC composite. Thermal creep results on Nicalon-CG and Hi-Nicalon were shown to be consistent with previously published data with Hi-Nicalon showing about a 100{degrees}C improvement in creep resistance. Preliminary data was also obtained on Nicalon-S that demonstrated that its creep resistance is greater than that of Hi-Nicalon.

  19. Mechanical Properties and Elastic Constants Due to Damage Accumulation and Amorphization in SiC

    International Nuclear Information System (INIS)

    Gao, Fei; Weber, William J.

    2004-01-01

    Damage accumulation due to cascade overlap, which was simulated previously, has been used to study the changes of elastic constants, bulk and elastic moduli as a function of dose. These mechanical properties generally decrease with increasing dose, and the rapid decrease at low-dose level indicates that point defects and small clusters play an important role in the changes of elastic constants rather than topological disorder. The internal strain relaxation has no effect on the elastic constants, C11 and C12, in perfect SiC, but it has a significant influence on all elastic constants calculated in damaged SiC. The elastic constants in the cascade-amorphized (CA) SiC decrease about 19%, 29% and 46% for C11, C12 and C44, respectively. The bulk modulus decrease 23% and the elastic modulus decreases 29%, which is consistent with experimental measurements. The stability of both the perfect SiC and CA-SiC under hydrostatic tension has been also investigated. All mechanical properties in the CA-SiC exhibit behavior similar to that in perfect SiC, but the critical stress at which the CA-SiC becomes structurally unstable is one order of magnitude smaller than that for perfect SiC

  20. Electronic structure of the misfit-layer compound (SnS)1.17NbS2 deduced from band-structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Ettema, A.R.H.F.; Haas, C.; Wiegers, G.A.; Leuken, H. van; Groot, R.A. de

    1995-01-01

    In order to understand the electronic structure of the misfit-layer compound (SnS)1.17NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)1.20NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

  1. Proposal of a SiC disposal canister for very deep borehole disposal

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Heui-Joo; Lee, Minsoo; Lee, Jong-Youl; Kim, Kyungsu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    In this paper authors proposed a silicon carbide, SiC, disposal canister for the DBD concept in Korea. A. Kerber et al. first proposed the SiC canister for a geological disposal of HLW, CANDU or HTR spent nuclear fuels. SiC has some drawbacks in welding or manufacturing a large canister. Thus, we designed a double layered disposal canister consisting of a stainless steel outer layer and a SiC inner layer. KAERI has been interested in developing a very deep borehole disposal (DBD) of HLW generated from pyroprocessing of PWR spent nuclear fuel and supported the relevant R and D with very limited its own budget. KAERI team reviewed the DBD concept proposed by Sandia National Laboratories (SNL) and developed its own concept. The SNL concept was based on the steel disposal canister. The authors developed a new technology called cold spray coating method to manufacture a copper-cast iron disposal canister for a geological disposal of high level waste in Korea. With this method, 8 mm thin copper canister with 400 mm in diameter and 1200 mm in height was made. In general, they do not give any credit on the lifetime of a disposal canister in DBD concept unlike the geological disposal. In such case, the expensive copper canister should be replaced with another one. We designed a disposal canister using SiC for DBD. According to an experience in manufacturing a small size canister, the fabrication of a large-size one is a challenge. Also, welding of SiC canister is not easy. Several pathways are being paved to overcome it.

  2. A multi-channel S-band FMCW radar front-end

    NARCIS (Netherlands)

    Maas, A.P.M.; Vliet, F.E. van

    2008-01-01

    This paper describes the design and performance of a low-cost synthesized FMCW radar module, operating in S band. The bi-layer PCB contains a frequency-agile low phase-noise synthesizer and three identical coherent receive-channels. The transmit channel has an automatic power control system that

  3. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    Science.gov (United States)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  4. An improved design of TRISO particle with porous SiC inner layer by fluidized bed-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rongzheng; Liu, Malin, E-mail: liumalin@tsinghua.edu.cn; Chang, Jiaxing; Shao, Youlin; Liu, Bing

    2015-12-15

    Tristructural-isotropic (TRISO) particle has been successful in high temperature gas cooled reactor (HTGR), but an improved design is required for future development. In this paper, the coating layers are reconsidered, and an improved design of TRISO particle with porous SiC inner layer is proposed. Three methods of preparing the porous SiC layer, called high methyltrichlorosilane (MTS) concentration method, high Ar concentration method and hexamethyldisilane (HMDS) method, are experimentally studied. It is indicated that porous SiC layer can be successfully prepared and the density of SiC layer can be adjusted by tuning the preparation parameters. Microstructure and characterization of the improved TRISO coated particle are given based on scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering and energy dispersive X-ray (EDX) analysis. It can be found that the improved TRISO coated particle with porous SiC layer can be mass produced successfully. The formation mechanisms of porous SiC layer are also discussed based on the fluidized bed-chemical vapor deposition principle. - Graphical abstract: An improved design of TRISO particle with porous SiC inner layer to replace the inner porous pyrolytic carbon layer was proposed and prepared by FB-CVD method. This new design is aimed to reduce the total internal pressure of the particles by reducing the formation of CO and to reduce the risks of amoeba effect. - Highlights: • An improved design of TRISO particle with porous SiC inner layer was proposed. • Three methods of preparing porous SiC layer are proposed and experimentally studied. • The density of porous SiC layer can be controlled by adjusting experimental parameters. • Formation mechanisms of porous SiC layer were given based on the FB-CVD principle. • TRISO particles with porous SiC inner layer were mass produced successfully.

  5. In-situ synthesis of SiC particles by the structural evolution of TiCx in Al–Si melt

    International Nuclear Information System (INIS)

    Nie, Jinfeng; Li, Dakui; Wang, Enzhao; Liu, Xiangfa

    2014-01-01

    Highlights: • A facile method to in-situ synthesize SiC was developed utilizing the structural evolution of TiC x in Al–Si melt. • The SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. • The SiC particles and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composite were prepared. • The wear resistance effect of SiC on the based alloy was investigated. - Abstract: A facile method has been developed to in-situ synthesize SiC particles utilizing the structural instability and evolution of TiC x in Al–Si melt. It is considered that the synthesis of SiC particles occurs via the gradual reaction between TiC x and Si atoms, whilst Si content plays the crucial role in this approach. If the Si content in the melt is above 30%, TiC x directly reacts with Si and Al to form SiC, but the needle-like TiAl x Si y phase formed simultaneously will do harm to the mechanical properties of the composites. Thus, it is proposed to add B element in the melt to transform the TiAl x Si y into TiB 2 particles. Therefore, the SiC and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composites were successfully prepared using the method. In the composites, the SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. Furthermore, the mechanical properties of base alloy, including the wear resistance and macro-hardness, have been obviously improved by the in-situ SiC particles. Besides, the relevant underlying mechanisms are also discussed

  6. Design principles of the yeast G1/S switch.

    Directory of Open Access Journals (Sweden)

    Xiaojing Yang

    2013-10-01

    Full Text Available A hallmark of the G1/S transition in budding yeast cell cycle is the proteolytic degradation of the B-type cyclin-Cdk stoichiometric inhibitor Sic1. Deleting SIC1 or altering Sic1 degradation dynamics increases genomic instability. Certain key facts about the parts of the G1/S circuitry are established: phosphorylation of Sic1 on multiple sites is necessary for its destruction, and both the upstream kinase Cln1/2-Cdk1 and the downstream kinase Clb5/6-Cdk1 can phosphorylate Sic1 in vitro with varied specificity, cooperativity, and processivity. However, how the system works as a whole is still controversial due to discrepancies between in vitro, in vivo, and theoretical studies. Here, by monitoring Sic1 destruction in real time in individual cells under various perturbations to the system, we provide a clear picture of how the circuitry functions as a switch in vivo. We show that Cln1/2-Cdk1 sets the proper timing of Sic1 destruction, but does not contribute to its destruction speed; thus, it acts only as a trigger. Sic1's inhibition target Clb5/6-Cdk1 controls the speed of Sic1 destruction through a double-negative feedback loop, ensuring a robust all-or-none transition for Clb5/6-Cdk1 activity. Furthermore, we demonstrate that the degradation of a single-phosphosite mutant of Sic1 is rapid and switch-like, just as the wild-type form. Our mathematical model confirms our understanding of the circuit and demonstrates that the substrate sharing between the two kinases is not a redundancy but a part of the design to overcome the trade-off between the timing and sharpness of Sic1 degradation. Our study provides direct mechanistic insight into the design features underlying the yeast G1/S switch.

  7. Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-08-15

    This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

  8. Hydrogen activated axial inter-conversion in SiC nanowires

    International Nuclear Information System (INIS)

    Ruemmeli, Mark H.; Adebimpe, David B.; Borowiak-Palen, Ewa; Gemming, Thomas; Ayala, Paola; Ioannides, Nicholas; Pichler, Thomas; Huczko, Andrzej; Cudzilo, Stanislaw; Knupfer, Martin; Buechner, Bernd

    2009-01-01

    A facile low pressure annealing route using NH 3 as a hydrogen source for the structural and chemical modification of SiC nanowires (SiCNWs) is presented. The developed route transforms SiCNWs into tubular SiC nanostructures while coaxial SiO 2 /SiCNWs reverse their sheath/core structure. Our findings suggest a decomposition process induced via the preferential substitution of silicon by hydrogen and via the difference in diffusion rates of available atomic species, which leads to axial structural rearrangement. In addition to these effects, the procedure improves the crystallinity of the samples. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation. - Graphical abstract: SiC and SiO 2 /SiCNWs are shown to be structurally modified through a hydrogen activated replacement route which can even lead to the axial inter-conversion of species. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation

  9. In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Huguet-Garcia, J., E-mail: juan.huguet-garcia@cea.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France); Jankowiak, A. [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France); Miro, S. [CEA, DEN, Service de Recherches en Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches en Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Serruys, Y. [CEA, DEN, Service de Recherches en Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Costantini, J.-M. [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F-91191 Gif-sur-Yvette (France)

    2016-05-01

    In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au{sup 3+}, 2 × 10{sup 15} cm{sup −2}) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 °C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900–920 °C and 930 °C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous–crystalline interphase with a grain growth rate of ∼20 nm min{sup −1}. On the other hand, recrystallization of TSA3 fiber is rather “spontaneous” with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers.

  10. In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

    International Nuclear Information System (INIS)

    Huguet-Garcia, J.; Jankowiak, A.; Miro, S.; Meslin, E.; Serruys, Y.; Costantini, J.-M.

    2016-01-01

    In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au"3"+, 2 × 10"1"5 cm"−"2) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 °C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900–920 °C and 930 °C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous–crystalline interphase with a grain growth rate of ∼20 nm min"−"1. On the other hand, recrystallization of TSA3 fiber is rather “spontaneous” with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers.

  11. Normal Isocurvature Surfaces and Special Isocurvature Circles (SIC)

    Science.gov (United States)

    Manoussakis, Gerassimos; Delikaraoglou, Demitris

    2010-05-01

    An isocurvature surface of a gravity field is a surface on which the value of the plumblines' curvature is constant. Here we are going to study the isocurvature surfaces of the Earth's normal gravity field. The normal gravity field is a symmetric gravity field therefore the isocurvature surfaces are surfaces of revolution. But even in this case the necessary relations for their study are not simple at all. Therefore to study an isocurvature surface we make special assumptions to form a vector equation which will hold only for a small coordinate patch of the isocurvature surface. Yet from the definition of the isocurvature surface and the properties of the normal gravity field is possible to express very interesting global geometrical properties of these surfaces without mixing surface differential calculus. The gradient of the plumblines' curvature function is vertical to an isocurvature surface. If P is a point of an isocurvature surface and "Φ" is the angle of the gradient of the plumblines' curvature with the equatorial plane then this direction points to the direction along which the curvature of the plumbline decreases / increases the most, and therefore is related to the strength of the normal gravity field. We will show that this direction is constant along a line of curvature of the isocurvature surface and this line is an isocurvature circle. In addition we will show that at each isocurvature surface there is at least one isocurvature circle along which the direction of the maximum variation of the plumblines' curvature function is parallel to the equatorial plane of the ellipsoid of revolution. This circle is defined as a Special Isocurvature Circle (SIC). Finally we shall prove that all these SIC lye on a special surface of revolution, the so - called SIC surface. That is to say, a SIC is not an isolated curve in the three dimensional space.

  12. Visible-Light-Mediated Excited State Relaxation in Semi-Synthetic Genetic Alphabet: d5SICS and dNaM.

    Science.gov (United States)

    Bhattacharyya, Kalishankar; Datta, Ayan

    2017-08-25

    The excited state dynamics of an unnatural base pair (UBP) d5SICS/dNaM were investigated by accurate ab-initio calculations. Time-dependent density functional and high-level multireference calculations (MS-CASPT2) were performed to elucidate the excitation of this UBP and its excited state relaxation mechanism. After excitation to the bright state S 2 (ππ*), it decays to the S 1 state and then undergoes efficient intersystem crossing to the triplet manifold. The presence of sulfur atom in d5SICS leads to strong spin-orbit coupling (SOC) and a small energy gap that facilitates intersystem crossing from S 1 (n s π*) to T 2 (ππ*) followed by internal conversion to T 1 state. Similarly in dNaM, the deactivation pathway follows analogous trends. CASPT2 calculations suggest that the S 1 (ππ*) state is a dark state below the accessible S 2 (ππ*) bright state. During the ultrafast deactivation, it exhibits bond length inversion. From S 1 state, significant SOC leads the population transfer to T 3 due to a smaller energy gap. Henceforth, fast internal conversion occurs from T 3 to T 2 followed by T 1 . From time-dependent trajectory surface hopping dynamics, it is found that excited state relaxation occurs on a sub-picosecond timescale in d5SICS and dNaM. Our findings strongly suggest that there is enough energy available in triplet state of UBP to generate reactive oxygen species and induce phototoxicity with respect to cellular DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  14. Ohmic Contacts to P-Type SiC

    National Research Council Canada - National Science Library

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  15. Solid-State Powered X-band Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Mohamed A.K. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Nann, Emilio A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Dolgashev, Valery A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tantawi, Sami [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neilson, Jeff [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2017-03-06

    In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple test cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.

  16. Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

    Institute of Scientific and Technical Information of China (English)

    MIN Xinmin; LU Ning; MEI Bingchu

    2006-01-01

    The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

  17. PENGARUH PEMBELAJARAN TEAM ASSISTED INDIVIDUALIZATION (TAI BERBANTUAN MEDIA SMART AND INTERESTING CARD (SIC TERHADAP HASIL BELAJAR SISWA

    Directory of Open Access Journals (Sweden)

    Kun Khuriya Pratiwi

    2015-11-01

    Full Text Available This experiment aimed to determine the influence of student’s learning outcomes of Senior High School (SHS in Parakan through the application of TAI (Team Assisted Individualization assisted of SIC (Smart and Interesting Card media on the subject of redox reaction. The population in this experiment were X grade students Senior High School (SHS in Parakan of the school year 2011/2012. Determination of the sample used cluster random sampling system that obtained two classes where X-3 as an experimental group that was treated by using TAI method assisted by SIC media and X-4 as a control group that was treated conventional methods. The research data was obtained by the method of documentation, testing, questionnaire and observation. The final analysis methods are normalization test, the similarity of two varians test, difference of two average test, gain test, biserial correlation, determination coefficient and analysis of questionnaire and observation sheet. The results showed that experiment class better than the control class. The results of study obtained results of the experimental group had an average 76,78 and a control group had an average of 67,82. TAI method assisted by SIC media give contribution to the learning outcome as 30%.Key words: TAI learning, SIC media 

  18. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  19. Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

    Science.gov (United States)

    Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

    2018-04-01

    The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

  20. Modulation of band gap by an applied electric field in BN-based heterostructures

    Science.gov (United States)

    Luo, M.; Xu, Y. E.; Zhang, Q. X.

    2018-05-01

    First-principles density functional theory (DFT) calculations are performed on the structural and electronic properties of the SiC/BN van der Waals (vdW) heterostructures under an external electric field (E-field). Our results reveal that the SiC/BN vdW heterostructure has a direct band gap of 2.41 eV in the raw. The results also imply that electrons are likely to transfer from BN to SiC monolayer due to the deeper potential of BN monolayer. It is also observed that, by applying an E-field, ranging from -0.50 to +0.65 V/Å, the band gap decreases from 2.41 eV to zero, which presents a parabola-like relationship around 0.0 V/Å. Through partial density of states (PDOS) plots, it is revealed that, p orbital of Si, C, B, and N atoms are responsible for the significant variations of band gap. These obtained results predict that, the electric field tunable band gap of the SiC/BN vdW heterostructures carries potential applications for nanoelectronics and spintronic device applications.

  1. Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

    Directory of Open Access Journals (Sweden)

    Qisong Li

    2016-02-01

    Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

  2. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  3. Study on porosity of ceramic SiC using small angle neutron scattering

    International Nuclear Information System (INIS)

    Li Jizhou; Yang Jilian; Kang Jian; Ye Chuntang

    1996-01-01

    The mechanical properties of functional heat-resistant ceramics SiC are significantly influenced by the concentration and dimensions of pores. Small angle neutron scattering measurements for 3 SiC samples with different densities are performed on C1-2 SANS instrument of the University of Tokyo. Two groups of the neutron data are obtained using 8 and 16 m of secondary flight path, 1 and 0.7 nm of neutron wave lengths, respectively. After deduction of background measurement and transmission correction, both neutron data are linked up with each other. The patterns of neutron data of 3 samples with Q range from 0.028∼0.5 nm -1 are almost with axial symmetry, showing that the shape of pores is almost spherical. Using Mellin transform, size distributions of pores in 3 samples are obtained. The average size (∼19 nm) of pores for hot-pressed SiC sample with higher density is smaller than the others (∼ 21 nm). It seems to be the reason why the density of hot-pressed SiC sample is higher than not hot-pressed sample

  4. Thermal conductivity analysis of SiC ceramics and fully ceramic microencapsulated fuel composites

    International Nuclear Information System (INIS)

    Lee, Hyeon-Geun; Kim, Daejong; Lee, Seung Jae; Park, Ji Yeon; Kim, Weon-Ju

    2017-01-01

    Highlights: • Thermal conductivity of SiC ceramics and FCM pellets was measured and discussed. • Thermal conductivity of FCM pellets was analyzed by the Maxwell-Eucken equation. • Effective thermal conductivity of TRISO particles applied in this study was assumed. - Abstract: The thermal conductivity of SiC ceramics and FCM fuel composites, consisting of a SiC matrix and TRISO coated particles, was measured and analyzed. SiC ceramics and FCM pellets were fabricated by hot press sintering with Al_2O_3 and Y_2O_3 sintering additives. Several factors that influence thermal conductivity, specifically the content of sintering additives for SiC ceramics and the volume fraction of TRISO particles and the matrix thermal conductivity of FCM pellets, were investigated. The thermal conductivity values of samples were analyzed on the basis of their microstructure and the arrangement of TRISO particles. The thermal conductivity of the FCM pellets was compared to that predicted by the Maxwell-Eucken equation and the thermal conductivity of TRISO coated particles was calculated. The thermal conductivity of FCM pellets in various sintering conditions was in close agreement to that predicted by the Maxwell-Eucken equation with the fitted thermal conductivity value of TRISO particles.

  5. Effect of oxygen on the processes of ion beam synthesis of buried SiC layers in silicon

    International Nuclear Information System (INIS)

    Artamonov, V.V.; Valakh, M.Ya.; Klyuj, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of Si-structures with buried silicon carbide (SiC) layers created by high dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. Effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layers are more effectively formed in Cz-Si or in Si subjected to additional oxygen implantation. Thus, oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed

  6. Mini-RF S- and X-band Bistatic Observations of the Floor of Cabeus Crater

    Science.gov (United States)

    Patterson, Gerald Wesley; Stickle, Angela; Turner, Franklin; Jensen, James; Cahill, Joshua; Mini-RF Team

    2017-10-01

    The Mini-RF instrument aboard NASA’s Lunar Reconnaissance Orbiter (LRO) is a hybrid dual-polarized synthetic aperture radar (SAR) and operates in concert with the Arecibo Observatory (AO) and the Goldstone deep space communications complex 34 meter antenna DSS-13 to collect S- and X-band bistatic radar data of the Moon. Bistatic radar data provide a means to probe the near subsurface for the presence of water ice, which exhibits a strong response in the form of a Coherent Backscatter Opposition Effect (CBOE). This effect has been observed in radar data for the icy surfaces of the Galilean satellites, the polar caps of Mars, polar craters on Mercury, and terrestrial ice sheets in Greenland. Previous work using Mini-RF S-band (12.6 cm) bistatic data suggests the presence of a CBOE associated with the floor of the lunar south polar crater Cabeus. The LRO spacecraft has begun its third extended mission. For this phase of operations Mini-RF is leveraging the existing AO architecture to make S-band radar observations of additional polar craters (e.g., Haworth, Shoemaker, Faustini). The purpose of acquiring these data is to determine whether other polar craters exhibit the response observed for Cabeus. Mini-RF has also initiated a new mode of operation that utilizes the X-band (4.2cm) capability of the instrument receiver and a recently commissioned X/C-band transmitter within the Deep Space Network’s (DSN) Goldstone complex to collect bistatic X-band data of the Moon. The purpose of acquiring these data is to constrain the depth/thickness of materials that exhibit a CBOE response - with an emphasis on observing the floor of Cabeus. Recent Mini-RF X-band observations of the floors of the craters Cabeus do not show evidence for a CBOE. This would suggest that the upper ~0.5 meters of the regolith for the floor of Cabeus do not harber water ice in a form detectable at 4.2 cm wavelengths.

  7. Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

    Directory of Open Access Journals (Sweden)

    Huazheng Sun

    2017-09-01

    Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

  8. Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Cichoň, Stanislav; Macháč, P.; Fekete, Ladislav; Lapčák, L.

    2016-01-01

    Roč. 98, Mar (2016), s. 441-448 ISSN 0008-6223 R&D Projects: GA MŠk LO1409; GA MŠk(CZ) LM2011029 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : graphene * SiC * microwave Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.337, year: 2016

  9. X-ray micro computed tomography characterization of cellular SiC foams for their applications in chemical engineering

    Energy Technology Data Exchange (ETDEWEB)

    Ou, Xiaoxia [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Zhang, Xun; Lowe, Tristan [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Blanc, Remi [FEI, 3 Impasse Rudolf Diesel, BP 50227, 33708 Mérignac (France); Rad, Mansoureh Norouzi [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Wang, Ying [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Batail, Nelly; Pham, Charlotte [SICAT SARL, 20 Place des Halles, 67000 Strasbourg (France); Shokri, Nima; Garforth, Arthur A. [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Withers, Philip J. [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Fan, Xiaolei, E-mail: xiaolei.fan@manchester.ac.uk [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom)

    2017-01-15

    Open-cell SiC foams clearly are promising materials for continuous-flow chemical applications such as heterogeneous catalysis and distillation. X-ray micro computed tomography characterization of cellular β-SiC foams at a spatial voxel size of 13.6{sup 3} μm{sup 3} and the interpretation of morphological properties of SiC open-cell foams with implications to their transport properties are presented. Static liquid hold-up in SiC foams was investigated through in-situ draining experiments for the first time using the μ-CT technique providing thorough 3D information about the amount and distribution of liquid hold-up inside the foam. This will enable better modeling and design of structured reactors based on SiC foams in the future. In order to see more practical uses, μ-CT data of cellular foams must be exploited to optimize the design of the morphology of foams for a specific application. - Highlights: •Characterization of SiC foams using novel X-ray micro computed tomography. •Interpretation of structural properties of SiC foams regarding to their transport properties. •Static liquid hold-up analysis of SiC foams through in-situ draining experiments.

  10. Porous SiC ceramics fabricated by quick freeze casting and solid state sintering

    Directory of Open Access Journals (Sweden)

    Feng Wang

    2017-06-01

    Full Text Available Porous SiC ceramics with uniform microstructure were fabricated by quick freezing in liquid nitrogen and solid state sintering. Poly (vinyl alcohol (PVA was added as binder and pore morphology controller in this work. The microstructure and mechanical properties of porous SiC ceramics could be controlled by the composition of the aqueous slurries. Both solid content of the slurries and PVA content impacted on the pore structures and mechanical properties of the porous SiC ceramics. The solid content of slurries and PVA content varied from 60 to 67.5 wt% and 2–6 wt%, respectively. Besides, the grain morphology of ceramics was also tailored by changing the sintering temperature from 2050 to 2150 °C. Porous SiC ceramics with an average porosity of 42.72%, flexural strength of 59.28 MPa were obtained at 2150 °C from 67.5 wt% slurries with 2 wt% PVA.

  11. Preparation of SiC Compacts by the Rapid Proto typing Machine

    International Nuclear Information System (INIS)

    Abdelrahman, A.A.M.; Ahmed, A.Z.; Elmasry, M.A.A.

    2008-01-01

    The preparation of ceramic green bodies from powders by the rapid proto typing is a promising technique. In this work SiC green bodies were prepared from black SiC powder mixed with 10 wt % organic binder namely Ave be SP G20 starch. Different liquid binders were investigated and were successful in producing strong green bodies such as NH 4 OH in the ph range 9-10 or 1 % HCl solution in water and or a mixture of 1% NH 4 Cl and NH 4 OH in the ph range of 8.5 to 9. The green bodies were then preheated at 200 degree C to eliminate the starch by thermal decomposition. After that these parts were infiltrated using molten silicon at 1450 degree C in Argon atmosphere. Unfortunately it was impossible to infiltrate the green bodies using liquid silicon. Another technique was followed which is dipping of the green bodies in liquid silicon. This method was successful. The densities of the green and dipped bodies were determined and they were examined under the metallo graph and SEM. It was found that no SiC dissolved in the silicon after dipping. This was concluded from the presence of sharp corners of SiC grains

  12. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  13. Effect of organic additives on mechanical properties of SiC ceramics prepared by a modified gelcasting method

    Directory of Open Access Journals (Sweden)

    Feng Wang

    2016-12-01

    Full Text Available A novel and simple gel system of isobutylene and maleic anhydride (PIBM was used to prepare SiC ceramics. The rheological behaviour of the SiC slurries was investigated as function of organic additives. The SiC slurries with 0.2 wt.% PIBM and 0.2 wt.% tetramethylammonium hydroxide (TMAH showed low viscosity, which was favourable for casting SiC green bodies. In order to obtain homogeneous green bodies, polyvinyl alcohol (PVA was used to assist the dispersion of carbon black in the slurries, and polyethylene glycol (PEG was added to inhibit the surface exfoliation of green bodies. The content of PVA was controlled carefully to avoid the warpage of green bodies during the drying process. Finally, homogeneous defect-free SiC green bodies were successfully fabricated via aqueous gelcasting. The SiC ceramics sintered at 2100 °C (prepared from slurries with solid content of 60 wt.% showed an average flexural strength of 305.7 MPa with porosity of 19.92%.

  14. Growth, characterization, and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, Robert F.

    1991-12-01

    The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

  15. La percepció de la població cerverina sobre el servei social bàsic

    OpenAIRE

    Gañet Soriguera, Laura

    2015-01-01

    Els Serveis Socials Bàsics (S.S.B.) són garantits per a totes les persones, especialment per a les que necessiten ajuda i suport per fer front a situacions de necessitat personal bàsica. Dins d’aquests hi ha professionals del Treball Social que treballen per a garantir-ho, i puguin arribar a tenir, aquestes persones, una vida de qualitat digna. Els S.S.B., són de dret subjectiu, de caràcter polivalent, preventiu i comunitari, ara bé, ho coneixen així la població cerverina? D...

  16. High power s-band vacuum load

    Energy Technology Data Exchange (ETDEWEB)

    Neubauer, Michael [Muons, Inc., Batavia, IL (United States); Dudas, Alan [Muons, Inc., Batavia, IL (United States); Krasnykh, Anatoly [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2016-12-29

    Through a combination of experimentation and calculation the components of a novel room temperature dry load were successfully fabricated. These components included lossy ceramic cylinders of various lengths, thicknesses, and percent of silicon carbide (SiC). The cylinders were then assembled into stainless steel compression rings by differential heating of the parts and a special fixture. Post machining of this assembly provided a means for a final weld. The ring assemblies were then measured for S-parameters, individually and in pairs using a low-cost TE10 rectangular to TE01 circular waveguide adapter specially designed to be part of the final load assembly. Matched pairs of rings were measured for assembly into the final load, and a sliding short designed and fabricated to assist in determining the desired short location in the final assembly. The plan for the project was for Muons, Inc. to produce prototype loads for long-term testing at SLAC. The STTR funds for SLAC were to upgrade and operate their test station to ensure that the loads would satisfy their requirements. Phase III was to be the sale to SLAC of loads that Muons, Inc. would manufacture. However, an alternate solution that involved a rebuild of the old loads, reduced SLAC budget projections, and a relaxed time for the replacement of all loads meant that in-house labor will be used to do the upgrade without the need for the loads developed in this project. Consequently, the project was terminated before the long term testing was initiated. However, SLAC can use the upgraded test stand to compare the long-term performance of the ones produced in this project with their rebuilt loads when they are available.

  17. High power s-band vacuum load

    International Nuclear Information System (INIS)

    Neubauer, Michael; Dudas, Alan; Krasnykh, Anatoly

    2016-01-01

    Through a combination of experimentation and calculation the components of a novel room temperature dry load were successfully fabricated. These components included lossy ceramic cylinders of various lengths, thicknesses, and percent of silicon carbide (SiC). The cylinders were then assembled into stainless steel compression rings by differential heating of the parts and a special fixture. Post machining of this assembly provided a means for a final weld. The ring assemblies were then measured for S-parameters, individually and in pairs using a low-cost TE10 rectangular to TE01 circular waveguide adapter specially designed to be part of the final load assembly. Matched pairs of rings were measured for assembly into the final load, and a sliding short designed and fabricated to assist in determining the desired short location in the final assembly. The plan for the project was for Muons, Inc. to produce prototype loads for long-term testing at SLAC. The STTR funds for SLAC were to upgrade and operate their test station to ensure that the loads would satisfy their requirements. Phase III was to be the sale to SLAC of loads that Muons, Inc. would manufacture. However, an alternate solution that involved a rebuild of the old loads, reduced SLAC budget projections, and a relaxed time for the replacement of all loads meant that in-house labor will be used to do the upgrade without the need for the loads developed in this project. Consequently, the project was terminated before the long term testing was initiated. However, SLAC can use the upgraded test stand to compare the long-term performance of the ones produced in this project with their rebuilt loads when they are available.

  18. Bandwidth Extension of an S-band, Fundamental-Mode Eight-Beam Klystron

    Science.gov (United States)

    2006-04-01

    Extension of an S - band , Fundamental-Mode Eight-Beam Klystron Khanh T. Nguyen Beam-Wave Research, Inc. Bethesda, MD 20814 Dean E. Pershing ATK Mission...of a five-cavity, approximately 18 cm downstream from the center of the broadband, high - power multiple-beam klystron (MBK) first gap - the logical...the circuit generates >550 kW across the band with a peak power of more than 600 kW at -3.27 Keywords: Multiple-beam klystron ; MBK; bandwidth GHz. The 1

  19. Preparation and performance of Pt/PTFE/Foam SiC as a hydrophobic catalyst for LPCE

    International Nuclear Information System (INIS)

    He, Jianchao; Wang, Heyi; Xiao, Chengjian; Li, Jiamao; Chen, Ping; Hou, Jingwei

    2016-01-01

    Highlights: • A new type of foam material, Foam SiC with three-dimensional network structure, was chosen as the carrier of catalyst. • Foam SiC was hydrophobic treated by PTFE, and achieved a good hydrophobic property. • Pt/PTFE/Foam SiC was prepared by impregnation method with Pt-organic solution and gaseous phase reduction method. • The hydrophobic catalysts were packed with Dixon phosphor bronze gauze rings (about 3 mm × 3 mm) in LPCE system to test the catalytic performance. • The effect of different size of the catalyst on LPCE was been tested. - Abstract: Platinum catalysts supported on a composite of polytetrafluoroethylene (PTFE) and Foam SiC (Pt/PTFE/Foam SiC) have been proposed and prepared by an impregnation method. The as-prepared Pt/PTFE/Foam SiC was characterized by compression load testing, dynamic contact angle measurement, SEM, XRD, and TEM. The results show that the catalyst prepared by triple hydrophobic treatment had an initial contact angle of 134.2°, a good compression performance of 3.2 MPa, and platinum nanoparticles of 12.1 nm (average size). The catalytic activity of the catalyst was tested with different packing methods, reaction temperatures, and gas-liquid ratios. An excellent hydrogen isotope exchange performance was observed using a hydrophilic packing material-to-catalyst ratio of 25% and reaction temperature of 80 °C. Pt/PTFE/Foam SiC may be used as a hydrophobic catalyst for a water detritiation system (WDS) via a liquid-phase catalytic exchange process (LPCE).

  20. Preparation and performance of Pt/PTFE/Foam SiC as a hydrophobic catalyst for LPCE

    Energy Technology Data Exchange (ETDEWEB)

    He, Jianchao; Wang, Heyi, E-mail: hywang@caep.cn; Xiao, Chengjian; Li, Jiamao; Chen, Ping; Hou, Jingwei

    2016-12-15

    Highlights: • A new type of foam material, Foam SiC with three-dimensional network structure, was chosen as the carrier of catalyst. • Foam SiC was hydrophobic treated by PTFE, and achieved a good hydrophobic property. • Pt/PTFE/Foam SiC was prepared by impregnation method with Pt-organic solution and gaseous phase reduction method. • The hydrophobic catalysts were packed with Dixon phosphor bronze gauze rings (about 3 mm × 3 mm) in LPCE system to test the catalytic performance. • The effect of different size of the catalyst on LPCE was been tested. - Abstract: Platinum catalysts supported on a composite of polytetrafluoroethylene (PTFE) and Foam SiC (Pt/PTFE/Foam SiC) have been proposed and prepared by an impregnation method. The as-prepared Pt/PTFE/Foam SiC was characterized by compression load testing, dynamic contact angle measurement, SEM, XRD, and TEM. The results show that the catalyst prepared by triple hydrophobic treatment had an initial contact angle of 134.2°, a good compression performance of 3.2 MPa, and platinum nanoparticles of 12.1 nm (average size). The catalytic activity of the catalyst was tested with different packing methods, reaction temperatures, and gas-liquid ratios. An excellent hydrogen isotope exchange performance was observed using a hydrophilic packing material-to-catalyst ratio of 25% and reaction temperature of 80 °C. Pt/PTFE/Foam SiC may be used as a hydrophobic catalyst for a water detritiation system (WDS) via a liquid-phase catalytic exchange process (LPCE).

  1. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

    2015-05-16

    MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

  2. Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

    Directory of Open Access Journals (Sweden)

    Huibin Zhang

    2017-02-01

    Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

  3. Síntese de Al2O3/SiC em forno de microondas: estudo de parâmetros do processo Synthesis of Al2O3/SiC in microwave oven: study of the processing parameters

    Directory of Open Access Journals (Sweden)

    T. P. Deksnys

    2005-12-01

    Full Text Available Estudos demonstram a eficiência do método de moagem prévia do aluminossilicato precursor para a síntese da fase Al2O3/SiC por meio da reação de redução carbotérmica em forno de microondas. No presente trabalho, além da moagem do precursor, outros parâmetros de reação foram estudados, como tempo de reação, potência da radiação emitida e fluxo de gás. As reações foram realizadas em forno de microondas semi-industrial, com adaptação para inserção de gás inerte. Dois tipos de reatores foram avaliados: um reator cilíndrico, termicamente isolado, e um reator tubular de leito fixo, nos quais foram colocados os precursores peletizados. Existe uma relação direta entre a saturação da atmosfera de reação com a cinética de redução carbotérmica do aluminossilicato. Esse comportamento, aliado a elevadas potências de emissão, favorecem a formação da fase Al2O3/SiC em períodos de tempo reduzidos.Results presented elsewhere have confirmed the feasibility of the previous milling process of the starting materials for the synthesis of Al2O3/SiC by the microwave-assisted carbothermal reduction. In the present work, parameters such as precursor milling, reaction time, microwave's power level and gas flow have been investigated. Reactions were carried out in a semi-industrial microwave oven (Cober Inc., USA, which allowed the inert gas insertion. Two reactions arrangement were developed to perform the synthesis: a cylindrical reactor, thermally insulated and a pipe fluidized bed reactor. Into both reactors, the precursor was applied in a palletized form to react. There is a direct relation between the reaction atmosphere saturation and the kinetics of the carbothermal reduction. This behavior, in addiction to high power levels of microwave radiation (>1.5 KW, favors the formation of Al2O3/SiC in a short time.

  4. Corrosion and wear behavior of functionally graded Al2024/SiC composites produced by hot pressing and consolidation

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, Fatih; Canakci, Aykut, E-mail: aykut@ktu.edu.tr; Varol, Temel; Ozkaya, Serdar

    2015-09-25

    Highlights: • Functionally graded Al2024/SiC composites were produced by hot pressing. • Effect of the number of graded layers was investigated on the corrosion behavior. • Functionally graded composites has the most corrosion resistant than composites. • Wear mechanisms of Al2024/SiC composites were explained. - Abstract: Functionally graded Al2024/SiC composites (FGMs) with varying percentage of SiC (30–60%) were produced by hot pressing and consolidation method. The effects of SiC content and number of layers of Al2024/SiC FGMs on the corrosion and wear behaviors were investigated. The microstructures of these composites were characterized by a scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS). The corrosion performances of composites were evaluated by potentiodynamic polarization scans in 3.5% NaCl solution. Corrosion experiments shows that corrosion rate (1109 mpy) of two layered FGMs which containing 50 wt.% SiC were much higher than Al2024 matrix (2569 mpy) and Al2024/50 wt.% SiC composite (2201 mpy). Mechanical properties of these composites were evaluated by microhardness measurements and ball-on-disk wear tests. As the applied load change from 15 to 20 N, the wear rates of the Al2024 increased significantly and wear mechanism transformed from mild to severe wear regime. It has been shown that Al2024/40 wt.% SiC composite has lower wear rate where adhesive and abrasive wear mechanisms play a major role.

  5. The Effect of SiC Polytypes on the Heat Distribution Efficiency of a Phase Change Memory.

    Science.gov (United States)

    Aziz, M. S.; Mohammed, Z.; Alip, R. I.

    2018-03-01

    The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using three types of silicon carbide’s structure as a heating element was investigated. Simulation was done using COMSOL Multiphysic 5.0 software with separate heater structure. Silicon carbide (SiC) has three types of structure; 3C-SiC, 4H-SiC and 6H-SiC. These structures have a different thermal conductivity. The temperature of GST and phase transition of GST can be obtained from the simulation. The temperature of GST when using 3C-SiC, 4H-SiC and 6H-SiC are 467K, 466K and 460K, respectively. The phase transition of GST from amorphous to crystalline state for three type of SiC’s structure can be determined in this simulation. Based on the result, the thermal conductivity of SiC can affecting the temperature of GST and changed of phase change memory (PCM).

  6. Effect of SiC whisker addition on the microstructures and mechanical properties of Ti(C, N)-based cermets

    International Nuclear Information System (INIS)

    Wu, Peng; Zheng, Yong; Zhao, Yongle; Yu, Haizhou

    2011-01-01

    Ti(C, N)-based cermets with addition of SiC whisker (SiC w ) were prepared by vacuum sintering. The microstructures of the prepared cermets were investigated by using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). Mechanical properties such as transverse rupture strength (TRS), fracture toughness (K IC ) and hardness (HRA) were also measured. It was found that the grain size of the cermets was affected by the SiC whisker addition. The cermets with 1.0 wt.% SiC whisker addition exhibited the smallest grain size. The porosities of the cermets increased with increasing SiC whisker additions. The addition of the SiC whisker had no influence on the phase constituents of the cermets. Compared with the cermets with no whisker addition, the highest TRS and fracture toughness for cermets with 1.0 wt.% SiC whisker addition increased by about 24% and 29%, respectively. The strengthening mechanisms were attributed to finer grain size, homogeneous microstructure and moderate thickness of rim phase. The toughening mechanisms were characterized by crack deflection, whisker bridging and whisker pulling-out.

  7. Life test on indigenous s-band pulsed magnetron

    International Nuclear Information System (INIS)

    Wanmode, Y.D.; Shrivastava, P.; Hannurkar, P.R.

    1999-01-01

    A 2 MW S-band pulsed magnetron has been developed under joint collaboration between CAT and CEERI. In this development effort several lab prototypes were evaluated on 2 MW microwave test facility developed at CAT. One magnetron is subjected to life test. The present paper describes the setup and procedures used for life test. Various observations and corrections made during the life tests are also described. Results of the tests are discussed. (author)

  8. Optical study on neutron irradiation effect on hexagonal SiC single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Moritami; Kimura, Itsurou; Kanazawa, Satoshi; Kanno, Ikuo; Kamiya, Koji [Kyoto Univ. (Japan); Nakata, Toshitake; Watanabe, Masanori; Nakagawa, Masuo; Atobe, Kozo

    1996-04-01

    It is well known that SiC is a higher radiation resistant semiconductor on comparison with Si and Ge. Recently, on accompanying with advancement of developing program on nuclear fission reactor on space, development of electronic element workable effectively under severe radiation environment is desired. SiC is expected as one of such elements. Therefore, because of considering importance of understanding the effect on fundamental properties of SiC electronic element under radiation environment before its development, some studies on it was executed. In this paper, according to find out induction of interesting defect center in hexagonal 4H- and 6H-SiC single crystals irradiated with reactor neutron on light absorption and SER test, outlines of these experimental results were reported. (G.K.)

  9. A porous SiC ammonia sensor

    NARCIS (Netherlands)

    Connolly, E.J.; Timmer, B.H.; Pham, H.T.M.; Groeneweg, J.; Sarro, P.M.; Olthuis, Wouter; French, P.J.

    2005-01-01

    When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as 0.5 ppm could be detected. We report the fabrication and preliminary

  10. Simulation study of the high intensity S-Band photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiongwei; Nakajima, Kazuhisa [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan)

    2001-10-01

    In this paper, we report the results of simulation study of the high intensity S-Band photoinjector. The aim of the simulation study is to transport high bunch charge with low emittance evolution. The simulation result shows that 7nC bunch with rms emittance 22.3 {pi} mm mrad can be outputted at the exit of photoinjector. (author)

  11. Simulation study of the high intensity S-Band photoinjector

    International Nuclear Information System (INIS)

    Zhu, Xiongwei; Nakajima, Kazuhisa

    2001-01-01

    In this paper, we report the results of simulation study of the high intensity S-Band photoinjector. The aim of the simulation study is to transport high bunch charge with low emittance evolution. The simulation result shows that 7nC bunch with rms emittance 22.3 π mm mrad can be outputted at the exit of photoinjector. (author)

  12. Estudio de la Citotoxicidad de Cerámicas Biomórficas de SiC Recubiertas con Vidrio Bioactivo

    Directory of Open Access Journals (Sweden)

    Borrajo, J. P.

    2006-04-01

    Full Text Available In the past years there was a need to develop new tough bioactive materials capable to resist high loads when implanted in the body, that led to the production of bioactive coatings on metallic substrates. A new approach, which consists of biomorphic silicon carbide (SiC coated with bioactive glass by Pulsed Laser Deposition (PLD, was recently presented. This new material joins the high mechanical strength, lightness and porosity of biomorphic SiC and the bioactive properties of PLD glass films. In this work, a multiple evaluation of this new material is presented starting from the biomorphic SiC morphology and porosity, following with the bioactivity in simulated body fluid of the coatings, and ending with a deep in vitro study with MG-63 cells. The citotoxicity of the SiC coated and uncoated and the cell proliferation and attachment were studied.

    La necesidad de desarrollar nuevos implantes basados en materiales bioactivos que sean capaces de soportar grandes cargas mecánicas ha llevado a la producción de sustratos metálicos recubiertos con cerámicas bioactivas. Recientemente se ha propuesto un dispositivo alternativo que consiste en un sustrato de carburo de silicio (SiC biomórfico recubierto con vidrio bioactivo, mediante la técnica de Depósito por Láser Pulsado (PLD, y que dispone de la resistencia mecánica adecuada, además de gran ligereza y una porosidad intrínseca muy favorable de cara a la implantación. En este trabajo se presenta un estudio interdisciplinar de este nuevo material centrado en la morfología y porosidad de sustratos de SiC provenientes de diferentes maderas, la bioactividad de los recubrimientos producidos por PLD y en la evaluación in vitro con células de osteosarcoma MG-63 con la que se ha determinado la citotoxicidad de estos materiales y se ha estudiado la influencia de los mismos en la adhesión y la proliferación celular.

  13. Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order 0003: SiC High Voltage Converters, N-Type Ohmic Contract Development for SiC Power Devices

    National Research Council Canada - National Science Library

    Cheng, Lin; Mazzola, Michael S

    2006-01-01

    ... ? SiC interfaces and silicide top surfaces is important for producing uniformly low contact resistances to achieve device operation at high-current levels without hot spot formation and contact degradation...

  14. Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

    Science.gov (United States)

    Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

    2018-04-01

    The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

  15. Friction Stir Processing of Copper-Coated SiC Particulate-Reinforced Aluminum Matrix Composite

    Directory of Open Access Journals (Sweden)

    Chih-Wei Huang

    2018-04-01

    Full Text Available In the present work, we proposed a novel friction stir processing (FSP to produce a locally reinforced aluminum matrix composite (AMC by stirring copper-coated SiC particulate reinforcement into Al6061 alloy matrix. Electroless-plating process was applied to deposit the copper surface coating on the SiC particulate reinforcement for the purpose of improving the interfacial adhesion between SiC particles and Al matrix. The core-shell SiC structure provides a layer for the atomic diffusion between aluminum and copper to enhance the cohesion between reinforcing particles and matrix on one hand, the dispersion of fine copper in the Al matrix during FSP provides further dispersive strengthening and solid solution strengthening, on the other hand. Hardness distribution and tensile results across the stir zone validated the novel concept in improving the mechanical properties of AMC that was realized via FSP. Optical microscope (OM and Transmission Electron Microscopy (TEM investigations were conducted to investigate the microstructure. Energy dispersive spectrometer (EDS, electron probe micro-analyzer (EPMA, and X-ray diffraction (XRD were explored to analyze the atomic inter-diffusion and the formation of intermetallic at interface. The possible strengthening mechanisms of the AMC containing Cu-coated SiC particulate reinforcement were interpreted. The concept of strengthening developed in this work may open a new way of fabricating of particulate reinforced metal matrix composites.

  16. Selected mechanical properties of aluminum composite materials reinforced with SiC particles

    Directory of Open Access Journals (Sweden)

    A. Kurzawa

    2008-07-01

    Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

  17. Preparation and characterization of the electrodeposited Cr-Al{sub 2}O{sub 3}/SiC composite coating

    Energy Technology Data Exchange (ETDEWEB)

    Gao Jifeng, E-mail: readlot@tom.com [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Suo Jinping, E-mail: jpsuo@yahoo.com.cn [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2011-09-01

    To increase the SiC content in Cr-based coatings, Cr-Al{sub 2}O{sub 3}/SiC composite coatings were plated in Cr(VI) baths which contained Al{sub 2}O{sub 3}-coated SiC powders. The Al{sub 2}O{sub 3}-coated SiC composite particles were synthesized by calcining the precursor prepared by heterogeneous deposition method. The transmission electron microscopy analysis of the particles showed that the nano-SiC particle was packaged by alumina. The zeta potential of the particles collected from the bath was up to +23 mV, a favorable condition for the co-deposition of the particles and chromium. Pulse current was used during the electrodeposition. Scanning Electron Microscopy (SEM) indicated that the coating was compact and combined well with the substrate. Energy dispersive X-ray analysis of Cr-Al{sub 2}O{sub 3}/SiC coatings demonstrated that the concentration of SiC in the coating reached about 2.5 wt.%. The corrosion behavior of the composite coating was studied by potentiodynamic polarization and electrochemical impedance spectroscopy techniques. The data obtained suggested that the Al{sub 2}O{sub 3}/SiC particles significantly enhanced the corrosion resistance of the composite coating in 0.05 M HCl solution.

  18. Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

    Science.gov (United States)

    Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

    2017-10-11

    It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided

  19. Broadband antireflection nanodome structures on SiC substrate

    DEFF Research Database (Denmark)

    Ou, Yiyu; Zhu, Xiaolong; Møller, Uffe Visbech

    2013-01-01

    Nanodome structures are demonstrated on the SiC substrate by using nanosphere lithography and dry etching. Significant surface antireflection has been observed over a broad spectral range from 400 nm to 1600 nm....

  20. RF processing of an S-band high gradient accelerator unit

    International Nuclear Information System (INIS)

    Morita, S.

    1994-01-01

    A 3m-long S-band accelerating structure is used in 1.54 GeV Linac of Accelerator Test Facility. The accelerating structure should be processed up to 200 MW which produce 52 MV/m accelerating gradient. The process of RF processing is described. (author)

  1. synthesis and characterization of al/sic composite made by stir casting method

    International Nuclear Information System (INIS)

    Ghauri, K.M.; Ahmad, A.; Ahmad, R.; Din, K.M.; Chaudhry, J.A.

    2013-01-01

    Ceramics contain a distinctive property of completely absence of slip planes and have least probability of deforming by the application of force. Among these ceramics, the silicon carbide occupies a competent place to be used as a reinforcing agent for aluminum or its alloys. It has the density close to aluminum and is best for making composite having good strength and good heat conductivity. Stir casting has been used to synthesize Al/SiC MMCs by reinforcing silicon carbide particles into aluminum matrix. The reason for using stir casting is to develop technology for the development of MMCs at affordable cost. The selection of SiC as reinforcement and Al as matrix is because of their easy availability. The practical data acquired, analyzed and optimized will be interpreted in the light of information available in the literature and be shared with the relevant industries. The present work was mainly carried out to characterize the SiC/Al composite which was produced by reinforcing the various proportions of SiC (5, 10, 15, 25 and 30%) in aluminum matrix using stir casting technique. Mechanical properties of test specimens made from stir-casted Aluminum-Silicon Carbide composites have been studied using metallographic and mechanical testing techniques. It was observed that as the volume fraction of SiC in the composite is gradually increased, the hardness and toughness increase. However, beyond a level of 25-30 percent SiC, the results are not very consistent, and depend largely on the uniformity of distribution of SiC in the aluminum matrix. (author)

  2. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  3. The origin of a peak in the reststrahlen region of SiC

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Rooyen, I.J. van; Henry, A.; Janzén, E.; Olivier, E.J.

    2012-01-01

    A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.

  4. The origin of a peak in the reststrahlen region of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Henry, A.; Janzen, E. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Olivier, E.J. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.

  5. Mechanical performance of SiC three-layer cladding in PWRs

    Energy Technology Data Exchange (ETDEWEB)

    Angelici Avincola, Valentina, E-mail: valentina.avincola@kit.edu [Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Guenoun, Pierre, E-mail: pguenoun@mit.edu [Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139 (United States); Shirvan, Koroush, E-mail: kshirvan@mit.edu [Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139 (United States)

    2016-12-15

    Highlights: • FEA calculations of the stress distribution in SiC three-layer cladding. • Simulation of SiC mechanical performance under operation and accident conditions. • Failure probability analysis of SiC in steady-state and accident conditions. - Abstract: The silicon carbide cladding concept is currently under investigation with regard to increasing the accident tolerance and economic performance of light-water reactor fuels. In this work, the stress fields in the multi-layered silicon carbide cladding for LWR fuels are calculated using the commercial finite element analysis software ADINA. The material properties under irradiation are implemented as a function of temperature. The cladding is studied under operating and accident conditions, specifically for the loss-of-coolant accident (LOCA). During the LOCA, the blowdown and the reflood phases are modeled, including the quench waterfront. The calculated stresses along the cladding thickness show a high sensitivity to the assumptions regarding material properties. The resulting stresses are compared with experimental data and the probability of failure is calculated considering a Weibull model.

  6. Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

    Science.gov (United States)

    Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

    2017-11-01

    Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

  7. The Oxidation Rate of SiC in High Pressure Water Vapor Environments

    Science.gov (United States)

    Opila, Elizabeth J.; Robinson, R. Craig

    1999-01-01

    CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

  8. Methods for growth of relatively large step-free SiC crystal surfaces

    Science.gov (United States)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  9. 260 Gbit/s photonic-wireless link in the THz band

    DEFF Research Database (Denmark)

    Pang, X.; Jia, S.; Ozolins, O.

    2016-01-01

    A single-transmitter/single-receiver THz link (0.3-0.5 THz) with a record net data rate of 260 Gbit/s is experimentally demonstrated. Spectrally efficient multi-channel signal transmission is enabled by a novel frequency-band-allocation scheme with pre-and post- digital equalization....

  10. Development of SiC Neutron Detector Assembly to Measure the Neutron Flux of the Reactor Core

    Energy Technology Data Exchange (ETDEWEB)

    Park, Se Hwan; Park, June Sic; Shin, Hee Sung; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Yong Kyun [Hanyang University, Seoul (Korea, Republic of)

    2012-05-15

    At present, the conventional detector to measure the neutron at harsh environment is a Self Powered Neutron Detector (SPND). Rhodium(Rh)-103 is in the SPND. When neutron is incident on the Rhodium, the neutron capture reaction occurs, and the Rh-103 is converted to Rh-104. The Rh-104 is decayed to Pd-104 by {beta}-decay, and electrons are generated as the decay products. Because of the half life of Rh-104, approximately 5 minutes are required for the SPND output to reach the equilibrium condition. Therefore the on-line monitoring of the nuclear reactor state is limited if the neutron flux in the reactor core is monitored with the SPND. Silicon carbide (SiC) has the possibility to be developed as neutron detector at harsh environment, because the SiC can be operative at high temperature and high neutron flux conditions. Previously, the basic operation properties of the SiC detector were studied. Also, the radiation response of the SiC detector was studied at high neutron and gamma dose rate. The measurement results for an ex-core neutron flux monitor or a neutron flux monitor of the spent fuel were published. The SiC detector was also developed as neutron detector to measure the fissile material with active interrogation method. However, the studies about the development of SiC detector are still limited. In the present work, the radiation damage effect of the SiC detector was studied. The detector structure was determined based on the study, and a neutron detector assembly was made with the SiC detectors. The neutron and gamma-ray response of the detector assembly is presented in this paper. The detector assembly was positioned in the HANARO research reactor core, the performance test was done. The preliminary results are also included in this paper

  11. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  12. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui

    2015-07-16

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  13. Resolution of the 179W-isomer anomaly: Exposure of a Fermi-aligned s band

    International Nuclear Information System (INIS)

    Walker, P.M.; Dracoulis, G.D.; Byrne, A.P.; Fabricius, B.; Kibedi, T.; Stuchbery, A.E.; Department of Physics, University of Surrey, Guildford, GU2 5XH United Kingdom)

    1991-01-01

    The K π =35/2 - , five-quasiparticle isomer in 179 W is shown to decay into the region of a backbend in the 7/2 - [514] band, allowing for the first time the identification of a full set of aligned-band states. Destructive interference results from level mixing in the band-crossing region. The deduced γ-ray branching ratios are used to establish the mixing matrix elements and to show that the aligned band has a high value of the K quantum number. The properties of well-defined alignment and yet also high K provide the first clear example of a Fermi-aligned s band. The anomalous decay of the isomer itself is now explained

  14. Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco

    2016-01-01

    This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability...... of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA...

  15. Anodization Mechanism on SiC Nanoparticle Reinforced Al Matrix Composites Produced by Power Metallurgy.

    Science.gov (United States)

    Ferreira, Sonia C; Conde, Ana; Arenas, María A; Rocha, Luis A; Velhinho, Alexandre

    2014-12-19

    Specimens of aluminum-based composites reinforced by silicon carbide nanoparticles (Al/SiC np ) produced by powder metallurgy (PM) were anodized under voltage control in tartaric-sulfuric acid (TSA). In this work, the influence of the amount of SiC np on the film growth during anodizing was investigated. The current density versus time response and the morphology of the porous alumina film formed at the composite surface are compared to those concerning a commercial aluminum alloy (AA1050) anodized under the same conditions. The processing method of the aluminum alloys influences the efficiency of the anodizing process, leading to a lower thicknesses for the unreinforced Al-PM alloy regarding the AA1050. The current density versus time response is strongly dependent on the amount of SiC np . The current peaks and the steady-state current density recorded at each voltage step increases with the SiC np volume fraction due to the oxidation of the SiC np . The formation mechanism of the anodic film on Al/SiC np composites is different from that occurring in AA1050, partly due the heterogeneous distribution of the reinforcement particles in the metallic matrix, but also to the entrapment of SiC np in the anodic film.

  16. A Kochen–Specker inequality from a SIC

    International Nuclear Information System (INIS)

    Bengtsson, Ingemar; Blanchfield, Kate; Cabello, Adán

    2012-01-01

    Yu and Oh (eprint) have given a state-independent proof of the Kochen–Specker theorem in three dimensions using only 13 rays. The proof consists of showing that a non-contextual hidden variable theory necessarily leads to an inequality that is violated by quantum mechanics. We give a similar proof making use of 21 rays that constitute a SIC (symmetric informationally-complete positive operator-valued measure) and a complete set of MUB (mutually unbiased bases). A theory-independent inequality is also presented using the same 21 rays, as required for experimental tests of contextuality. -- Highlights: ► We find a state-independent Kochen–Specker inequality in dimension 3 with 21 rays. ► The rays constitute a SIC (9 rays) and a complete set of MUB (12 rays). ► Orthogonalities among the rays produce the Hesse configuration. ► The rays also give a state-independent non-contextual hidden variable inequality. ► We show that both inequalities are violated by quantum mechanics.

  17. Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn; He, Jiazhu; Chen, Le; Li, Kuilong; Jia, Fang; Zeng, Yuxiang; Lu, Youming; Zhu, Deliang; Liu, Wenjun, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn [College of Materials Science and Engineering, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Zhang, Yuan [School of Physics and Electronic Information, Hua Bei Normal University, 100 Dongshan Road, Huai Bei 235000 (China); Liu, Qiang; Yu, Wenjie [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050 (China); Wu, Jing [Institute of Materials research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore (Singapore)

    2016-08-15

    The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.

  18. Study on extrusion process of SiC ceramic matrix

    Science.gov (United States)

    Dai, Xiao-Yuan; Shen, Fan; Ji, Jia-You; Wang, Shu-Ling; Xu, Man

    2017-11-01

    In this thesis, the extrusion process of SiC ceramic matrix has been systematically studied.The effect of different cellulose content on the flexural strength and pore size distribution of SiC matrix was discussed.Reselts show that with the increase of cellulose content, the flexural strength decreased.The pore size distribution in the sample was 1um-4um, and the 1um-2um concentration was more concentrated. It is found that the cellulose content has little effect on the pore size distribution.When the cellulose content is 7%, the flexural strength of the sample is 40.9Mpa. At this time, the mechanical properties of the sample are the strongest.

  19. Two new constructions of approximately SIC-POVMs from multiplicative characters

    Science.gov (United States)

    Luo, Gaojun; Cao, Xiwang

    2017-12-01

    In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are relevant to quantum state tomography [8], quantum cryptography [15], and foundational studies [16]. In general, it is hard to construct SIC-POVMs and only a few classes of them existed, as we know. Moreover, we do not know whether there exists an infinite class of them. Many researchers tried to construct approximately symmetric informationally complete positive operator-valued measures (ASIC-POVMs). In this paper, we propose two new constructions of ASIC-POVMs for prime power dimensions only by using multiplicative characters over finite fields.

  20. Early implementation of SiC cladding fuel performance models in BISON

    Energy Technology Data Exchange (ETDEWEB)

    Powers, Jeffrey J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-18

    SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation due to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.

  1. Characteristics of hot-pressed fiber-reinforced ceramics with SiC matrix

    Science.gov (United States)

    Miyoshi, Tadahiko; Kodama, Hironori; Sakamoto, Hiroshi; Goto, Akihiro; Iijima, Shiroo

    1989-11-01

    Silicon carbide ceramics’ matrix composites with SiC or C filaments were fabricated through hot pressing, and the effects of the filament pullout on their fracture toughness were experimentally investigated. The C-rich coating layers on the SiC filaments were found to have a significant effect on the frictional stress at the filament/matrix interfaces, through assising the filamet pullout from the matrix. Although the coating layers were apt to burn out in the sintering process of SiC matrix compposites, a small addition of carbon to the raw materials was found to be effective for the retention of the layers on the fibers, thus increasing the fracture toughness of the composites. The fracture toughness of the C filament/SiC matrix composite increased with temperature due to the larger interfacial frictional stress at higher temperatures, because of the higher thermal expansion of the filament in the radial direction than that of the matrix.

  2. Oxidation of BN-coated SiC fibers in ceramic matrix composites

    International Nuclear Information System (INIS)

    Sheldon, B.W.; Sun, E.Y.

    1996-01-01

    Thermodynamic calculations were performed to analyze the simultaneous oxidation of BN and SiC. The results show that, with limited amounts of oxygen present, the formation of SiO 2 should occur prior to the formation of B 2 O 3 . This agrees with experimental observations of oxidation in glass-ceramic matrix composites with BN-coated SiC fibers, where a solid SiO 2 reaction product containing little or no boron has been observed. The thermodynamic calculations suggest that this will occur when the amount of oxygen available is restricted. One possible explanation for this behavior is that SiO 2 formation near the external surfaces of the composite closes off cracks or pores, such that vapor phase O 2 diffusion into the composite occurs only for a limited time. This indicates that BN-coated SiC fibers will not always oxidize to form significant amounts of a low-melting, borosilicate glass

  3. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  4. Continuously tunable S and C+L bands ultra wideband erbium-doped fiber ring laser

    International Nuclear Information System (INIS)

    Wang, Q; Yu, Q X

    2009-01-01

    This paper presents an ultra wideband tunable silica-based erbium doped fiber ring laser (EDFRL) that can be continuously tuned in S and C+L bands from 1475 to 1619 nm. It is the first time that a fiber ring laser's tuning range reaches 144 nm using a standard silica-based C-band erbium-doped fiber as gain media. In the laser configuration two isolators are used in the fiber loop for suppressing the ASE in C-band and elevating the lasing gain in S-band. As a result the available lasing wavelength is extended toward the shorter wavelength of the gain bandwidth. The optimized erbium-doped fiber length, output coupling ratio and pumping laser power have been obtained through experimental study. This ring fiber laser has simple configuration, low threshold, flat laser spectral distribution and high signal-to-ASE-noise ratio. The laser will have many potential applications in fiber sensor wavelength interrogation, high-resolution spectroscopy and fiber optic communications

  5. Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

    Science.gov (United States)

    Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

    2011-01-01

    In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

  6. Resolution of the 179W isomer anomaly: exposure of a fermi aligned s-band

    International Nuclear Information System (INIS)

    Walker, P.M.; Surrey Univ., Guildford; Dracoulis, G.D.; Byrne, A.P.; Fabricius, B.; Kibedi, T.; Stuchbery, A.E.

    1991-06-01

    The K Π = 35/2 - , five quasiparticle isomer in 179 W is shown to decay into the region of a backbend in the 7/2 - [514] band, allowing for the first time the identification of a full set of aligned-band states. Destructive interference results from level-mixing in the band-crossing region. The deduced γ-ray branching ratios are used to establish the mixing matrix elements and to show that the aligned band has a high value of the K-quantum number. The properties of well-defined alignment and yet also high-K, provided the first clear example of a Fermi Aligned s-band. The anomalous decay of the isomer itself is now explained. 11 refs., 1 tab., 3 figs

  7. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  8. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    Science.gov (United States)

    Pinzón, Cristian; de Paz, Yanira; Bajo, Javier; Abraham, Ajith; Corchado, Juan M.

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a kind of intelligent agent, which integrates a case-based reasoning system. This agent, which is the core of the architecture, allows the application of detection techniques based on anomalies as well as those based on patterns, providing a great degree of autonomy, flexibility, robustness and dynamic scalability. The characteristics of the multiagent system allow an architecture to detect attacks from different types of devices, regardless of the physical location. The architecture has been tested on a medical database, guaranteeing safe access from various devices such as PDAs and notebook computers.

  9. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  10. Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic; Elaboration de ceramiques nanostructurees en carbure de silicium (SiC): de la synthese de poudre a la ceramique frittee

    Energy Technology Data Exchange (ETDEWEB)

    Reau, A. [CEA Saclay, Dept. des Materiaux pour le Nucleaire (DEN/DANS/DMN/SRMA), 91 - Gif-sur-Yvette (France)

    2008-07-01

    Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC{sub f}/SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC{sub f}/SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

  11. Effect of LaB6 on the thermal shock property of MoSi2-SiC coating for carbon/carbon composites

    International Nuclear Information System (INIS)

    Li Ting; Li Hejun; Shi Xiaohong

    2013-01-01

    Highlights: ► LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC multi-composition coatings were coated on C/C composites by pack cementation. ► The microstructure and thermal shock resistance of both coatings were investigated. ► The addition of LaB 6 can increase the compactness, flexural strength and fracture toughness of the MoSi 2 -SiC coating simultaneously. ► Both coatings bond well with the substrates before and after thermal cycling oxidation between 1773 K and room temperature. ► The LaB 6 -MoSi 2 -SiC coated C/C shows better thermal shock resistance than the MoSi 2 -SiC coated C/C. - Abstract: LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coatings were prepared on the surface of carbon/carbon composites by pack cementation method. The crystal structures of the coatings were measured by X-ray diffraction. The morphologies and element distributions were also analyzed by scanning electron microscopy and energy dispersive spectroscopy, respectively. The effect of LaB 6 on the microstructure and thermal shock resistance of MoSi 2 -SiC coating was investigated. The results indicated that the LaB 6 -MoSi 2 -SiC coating possessed a denser structure and superior thermal shock resistance. After 25 times of thermal cycling oxidation between 1773 K and room temperature, the weight losses of the LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coated samples were 0.627% and 2.019%, respectively.

  12. The development of SiC whisker fabrication technology for nuclear applications

    International Nuclear Information System (INIS)

    Kang, Thae Khapp; Kuk, Il Hiun; Lee, Jae Chun; Rhee, Chang Kyu; Lee, Ho Jin; Park, Soon Dong

    1990-02-01

    Important process factors of carbothermic process for the growth of SiC whiskers were investigated. The crystalline form of silicon dioxide, amount of carbon addition, graphite, silicon, catalysts, additive and reaction temperature were chosen as the main factors. Morphology of the resultant products was grouped into 3 different types; whisker,noodle and power types. The addition of catalyst affected in most the formation of SiC whiskers. Effects of catalyst and additive additions and reaction atmospheres on the morphology anf growth of SiC whiskers were investigated, silicon monoxide power and carbon monoxide gas were used as the raw materials. The addition of an iron containing catalyst resulted in a very long thread-like growth of the whiskers, while that of sodium chloride helical curlings. Addition of hydrogen to the non-oxidizing atmosphere enhanced the whisker formations. Crystallization of amorphous silicon monoxide raw powder was investigated at high temperatures up to 1500 deg C in Ar atmosphere using graphite crucible. Up to 900 deg C no crystallization occurred, while at 1100 - 1300 deg C silicon formation, and at 1500 deg C silicon dioxide and silicon carbide formations were detected. A slight weight loss began 1300 deg C, and the weight loss became about 33 % at 1500 deg C. After the formation reaction of SiC whiskers, the reaction products were leached by hydrofluoric acids. The optimum concentration of the hydrofluoric acid was 2 %. (author)

  13. A comparative study of low energy radiation responses of SiC, TiC and ZrC

    International Nuclear Information System (INIS)

    Jiang, M.; Xiao, H.Y.; Zhang, H.B.; Peng, S.M.; Xu, C.H.; Liu, Z.J.; Zu, X.T.

    2016-01-01

    In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to low energy irradiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irradiation that is observed experimentally. The stronger radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the radiation resistances of carbide materials.

  14. 16O+16O molecular nature of the superdeformed band of 32S and the evolution of the molecular structure

    International Nuclear Information System (INIS)

    Kimura, Masaaki; Horiuchi, Hisashi

    2004-01-01

    The relation between the superdeformed band of 32 S and 16 O+ 16 O molecular bands is studied by the deformed-basis antisymmetrized molecular dynamics with the Gogny D1S force. It is found that the obtained superdeformed band members of S have a considerable amount of the 16 O+ 16 O component. Above the superdeformed band, we have obtained two excited rotational bands which have more prominent character of the 16 O+ 16 O molecular band. These three rotational bands are regarded as a series of 16 O+ 16 O molecular bands which were predicted by using the unique 16 O- 16 O optical potential. As the excitation energy and principal quantum number of the relative motion increase, the 16 O+ 16 O cluster structure becomes more prominent but at the same time, the band members are fragmented into several states

  15. Residual Stress Measurement of SiC tile/Al7075 Hybrid Composites by Neutron Diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong Bok; Lee, Jun Ho; Hong, Soon Hyung; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of); Lee, Sang Bok; Lee, Sang Kwan [Korea Institute of Materials Science, Changwon (Korea, Republic of); Muslihd, M. Rifai [Center for Advanced Materials Science and Technology, Tangerang (India)

    2016-05-15

    In this research, SiC which has low density, high compressive strength, and high elastic modulus was used to fabricate the armor plate. In addition, Al which has low density and high toughness was used for a metal matrix of the composites. If two materials are combined, the composite can be effective materials for light weight armor applications. However, the existence of a large difference in coefficients of thermal expansion (CTE) between SiC and Al matrix, SiC/Al composites can have residual stresses while cooled in the fabrication process. Previous research reported that residual stresses in the composites or microstructures have an effect on the fatigue life and their mechanical properties. Some researchers reported about the residual stresses in the SiCp/Al metal matrix composites by numerical simulation systems, X-ray diffraction, and destructive methods. In order to analyze the residual stress of SiC/Al composites, the neutron diffraction as the non-destructive method was performed in this research. The 50 vol.% SiC{sub p}/Al7075 composites and SiC tile inserted 50 vol.% SiC{sub p}/Al7075 hybrid composites were measured to analyze the residual stress of Al (111) and SiC (111). Both samples had the tensile residual stresses in the Al (111) and the compressive residual stresses in the SiC (111) due to the difference in CTE.

  16. Methodology Development for SiC Sensor Signal Modelling in the Nuclear Reactor Radiation Environments

    International Nuclear Information System (INIS)

    Cetnar, J.; Krolikowski, I.P.

    2013-06-01

    This paper deals with SiC detector simulation methodology for signal formation by neutrons and induced secondary radiation as well as its inverse interpretation. The primary goal is to achieve the SiC capability of simultaneous spectroscopic measurements of neutrons and gamma-rays for which an appropriate methodology of the detector signal modelling and its interpretation must be adopted. The process of detector simulation is divided into two basically separate but actually interconnected sections. The first one is the forward simulation of detector signal formation in the field of the primary neutron and secondary radiations, whereas the second one is the inverse problem of finding a representation of the primary radiation, based on the measured detector signals. The applied methodology under development is based on the Monte Carlo description of radiation transport and analysis of the reactor physics. The methodology of SiC detector signal interpretation will be based on the existing experience in neutron metrology developed in the past for various neutron and gamma-ray detection systems. Since the novel sensors based on SiC are characterised by a new structure, yet to be finally designed, the methodology for particle spectroscopic fluence measurement must be developed while giving a productive feed back to the designing process of SiC sensor, in order to arrive at the best possible design. (authors)

  17. THERMAL CONDUCTIVITY OF SIC AND C FIBERS

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, Gerald E.; Senor, David J.; Kowbel, W.; Webb, J.; Kohyama, Akira

    2000-09-01

    Several rod-shaped specimens with uniaxially packed fibers (Hi-Nicalon, Hi-Nicalon Type S, Tyranno SA and Amoco K1100 types) and a pre-ceramic polymer matrix have been fabricated. By using appropriate analytic models, the bare fiber thermal conductivity (Kf) and the interface thermal conductance (h) will be determined as a function of temperature up to 1000?C before and after irradiation for samples cut from these rods. Initial results are: (1) for unirradiated Hi-Nicalon SiC fiber, Kf varied from 4.3 up to 5.9 W/mK for the 27-1000?C range, (2) for unirradiated K1100 graphite fiber, Kf varied from 576 down to 242 W/mK for the 27-1000?C range, and (3) h = 43 W/cm2K at 27?C as a typical fiber/matrix interface conductance.

  18. Large-scale synthesis of monodisperse SiC nanoparticles with adjustable size, stoichiometric ratio and properties by fluidized bed chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rongzheng; Liu, Malin, E-mail: liumalin@tsinghua.edu.cn; Chang, Jiaxing [Tsinghua University, Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology (China)

    2017-02-15

    A facile fluidized bed chemical vapor deposition method was proposed for the synthesis of monodisperse SiC nanoparticles by using the single precursor of hexamethyldisilane (HMDS). SiC nanoparticles with average particle size from 10 to 200 nm were obtained by controlling the temperature and the gas ratio. An experimental chemical vapor deposition phase diagram of SiC in the HMDS-Ar-H{sub 2} system was obtained and three regions of SiC-Si, SiC and SiC-C can be distinguished. The BET surface area and the photoluminescence properties of the SiC nanoparticles can be adjusted by changing the nanoparticle size. For the SiC nanospheres with free carbon, a novel hierarchical structure with 5 ~ 8 nm SiC nanoparticles embedded into the graphite matrix was obtained. The advantages of fluidized bed technology for the preparation of SiC nanoparticles were proposed based on the features of homogenous reaction zone, narrow temperature distribution, ultra-short reactant residence time and mass production.

  19. Large-scale synthesis of monodisperse SiC nanoparticles with adjustable size, stoichiometric ratio and properties by fluidized bed chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, Rongzheng; Liu, Malin; Chang, Jiaxing

    2017-01-01

    A facile fluidized bed chemical vapor deposition method was proposed for the synthesis of monodisperse SiC nanoparticles by using the single precursor of hexamethyldisilane (HMDS). SiC nanoparticles with average particle size from 10 to 200 nm were obtained by controlling the temperature and the gas ratio. An experimental chemical vapor deposition phase diagram of SiC in the HMDS-Ar-H_2 system was obtained and three regions of SiC-Si, SiC and SiC-C can be distinguished. The BET surface area and the photoluminescence properties of the SiC nanoparticles can be adjusted by changing the nanoparticle size. For the SiC nanospheres with free carbon, a novel hierarchical structure with 5 ~ 8 nm SiC nanoparticles embedded into the graphite matrix was obtained. The advantages of fluidized bed technology for the preparation of SiC nanoparticles were proposed based on the features of homogenous reaction zone, narrow temperature distribution, ultra-short reactant residence time and mass production.

  20. High-temperature mechanical and material design for SiC composites

    International Nuclear Information System (INIS)

    Ghoniem, N.M.

    1992-01-01

    Silicon Carbide (SiC) fiber reinforced composites (FRC's) are strong potential candidate structural and high heat flux materials for fusion reactors. During this past decade, they have been vigorously developed for use in aerospace and transportation applications. Recent fusion reactor systems studies, such as ARIES, have concluded that further development of SiC composites will result in significant safety, operational, and waste disposal advantages for fusion systems. A concise discussion of the main material and design issues related to the use of SiC FRC's as structural materials in future fusion systems is given in this paper. The status of material processing of SiC/SiC composites is first reviewed. The advantages and shortcomings of the leading processing technology, known as Chemical Vapor Infiltration are particularly highlighted. A brief outline of the design-relevant physical, mechanical, and radiation data base is then presented. SiC/SiC FRC's possess the advantage of increased apparent toughness under mechanical loading conditions. This increased toughness, however, is associated with the nucleation and propagation of small crack patterns in the structure. Design approaches and failure criteria under these conditions are discussed

  1. Biomorphous SiC ceramics prepared from cork oak as precursor

    Science.gov (United States)

    Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

    2016-04-01

    Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:C:Si, SiC:C, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

  2. Suppressing band gap of MoS{sub 2} by the incorporation of four- and eight-membered rings

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Liyan; Zhang, Tingting, E-mail: ttzhang@hytc.edu.cn [Huaiyin Normal University, School of Physics and Electronic & Electrical Engineering, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems (China)

    2015-05-15

    A stable planar allotrope of MoS{sub 2}, formed by introducing four- and eight-membered rings into its hexagonal network (H468), is identified to be a narrow direct-band-gap semiconductor by first principle calculations, which is remarkably different from the large band gap semiconductor of conventional MoS{sub 2} and also the zero band gap allotrope consisting of four- and eight-membered rings (H48) only. The medium-sized direct band gap indicates that H468 would find applications in nanoelectronics and near-infrared optoelectronic devices. Furthermore, the distinctive simulated scanning tunneling microscope images under positive and negative biases might be a unique characteristic for the experimental identification of such an allotrope of MoS{sub 2}.

  3. 160 Gbit/s photonics wireless transmission in the 300-500 GHz band

    Directory of Open Access Journals (Sweden)

    X. Yu

    2016-11-01

    Full Text Available To accommodate the ever increasing wireless traffic in the access networks, considerable efforts have been recently invested in developing photonics-assisted wireless communication systems with very high data rates. Superior to photonic millimeter-wave systems, terahertz (THz band (300 GHz-10 THz provides a much larger bandwidth and thus promises an extremely high capacity. However, the capacity potential of THz wireless systems has by no means been achieved yet. Here, we successfully demonstrate 160 Gbit/s wireless transmission by using a single THz emitter and modulating 25 GHz spaced 8 channels (20 Gbps per channel in the 300-500 GHz band, which is the highest bitrate in the frequency band above 300 GHz, to the best of our knowledge.

  4. Kent’s Sweden, or what a rock band can tell us about a nation

    Directory of Open Access Journals (Sweden)

    Johansson, Ola

    2013-06-01

    Full Text Available Music can communicate a great deal about the culture and society that it comes from. This is the case with the contemporary Swedish rock band Kent, who are not only the most popular band in recent Swedish music history, but also perceived as quintessentially Swedish. Of particular importance to understand this Swedishness is the band’s origin in the city of Eskilstuna, which communicates three interrelated ideas about Sweden: Eskilstuna as an archetypical Swedish small city; the band’s humble beginnings in Eskilstuna illustrates a “class journey” that resonates in Sweden; and Kent’s migration to Stockholm has resulted in an ambivalent relationship with their hometown. The path of Kent’s career has further reinforced the notion of Kent as a Swedish band, particularly as they failed outside the Nordic countries and how their concert choices and collective public persona create associations with Swedishness. Finally, the content of Kent’s music and lyrics are rich with spatial and environmental metaphors that can be conceptualized as four different landscapes representing Sweden: an inner landscape, a public landscape, an urban landscape, and a winter landscape.

  5. Compton profiles and band structure calculations of CdS and CdTe

    International Nuclear Information System (INIS)

    Heda, N.L.; Mathur, S.; Ahuja, B.L.; Sharma, B.K.

    2007-01-01

    In this paper we present the isotropic Compton profiles of zinc-blende CdS and CdTe measured at an intermediate resolution of 0.39 a.u. using our 20 Ci 137 Cs Compton spectrometer. The electronic band structure calculations for both the zinc-blende structure compounds and also wurtzite CdS have been undertaken using various schemes of ab-initio linear combination of atomic orbitals calculations implemented in CRYSTAL03 code. The band structure and Mulliken's populations are reported using density functional scheme. In case of wurtzite CdS, our theoretical anisotropies in directional Compton profiles are compared with available experimental data. In case of both the zinc-blende compounds, the isotropic experimental profiles are found to be in better agreement with the present Hartree-Fock calculations. A study of the equal-valence-electron-density experimental profiles of zinc-blende CdS and CdTe shows that the CdS is more ionic than CdTe. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

    1962-04-15

    distintas procedencias. Las uniones se obtuvieron en el horno de Lely. Midieron las caracteristicas directa e inversa durante la irradiacion, y despues de esta, hasta la temperatura de 150{sup o}C. Se estan realizando mediciones hasta 500{sup o}C. Han encontrado que uno de los tipos de diodo es resistente a los neutrones del BR-1 hasta un flujo integrado de 10{sup 15} neutrones/cm{sup 2}, mientras que el otro soporta hasta 10{sup 17} neutrones/cm{sup 2}. La memoria indica los cambios de las caracteristicas, asi como los resultados de algunos experimentos de recocido. (author) [Russian] V poiskakh poluprovodnikov, kotorye mogli by byt' ispol'zovany v reaktorakh s vysokoj plotnost'yu nejtronnogo potoka dlya izmereniya raspredeleniya potokov, my obluchali v bel'gijskom reaktore BR-1 perekhody tipa p-n v SiC. Byli oblucheny dva tipa diodov SiC razlichnogo proiskhozhdeniya. EHti perekhody vyrashchivayutsya v pechi Loli. Izmeneniya pryamoj i obratnoj kharakteristik byli izmereny posle i vo vremya oblucheniya vplot' do temperatury 150{sup o}C; v nastoyashchee vremya proizvodyatsya izmereniya vplot' do temperatury 500{sup o}C. Bylo ustanovleno, chto odin tip dioda vyderzhivaet nejtronnoe obluchenie reaktora BR-1 vplot' do integrirovannogo potoka 10{sup 15} nejtronov na kv. sm, togda kak drugoj tip vyderzhivaet obluchenie vplot' do potoka 10{sup 17} nejtronov na kv. sm. Dayutsya izmeneniya kharakteristik, a takzhe rezul'taty nekotorykh ehksperimentov otzhiga. (author)

  7. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  8. An audit of the knowledge and attitudes of doctors towards Surgical Informed Consent (SIC).

    Science.gov (United States)

    Ashraf, Bushra; Tasnim, Nasira; Saaiq, Muhammad; Zaman, Khaleeq-Uz-

    2014-11-01

    The Surgical Informed Consent (SIC) is a comprehensive process that establishes an information-based agreement between the patient and his doctor to undertake a clearly outlined medical or surgical intervention. It is neither a casual formality nor a casually signed piece of paper. The present study was designed to audit the current knowledge and attitudes of doctors towards SIC at a tertiary care teaching hospital in Pakistan. This cross-sectional qualitative investigation was conducted under the auspices of the Department of Medical Education (DME), Pakistan Institute of Medical Sciences (PIMS), Shaheed Zulfiqar Ali Bhutto Medical University (SZABMU), Islamabad over three months period. A 19-item questionnaire was employed for data collection. The participants were selected at random from the list of the surgeons maintained in the hospital and approached face-to-face with the help of a team of junior doctors detailed for questionnaire distribution among them. The target was to cover over 50% of these doctors by convenience sampling. Out of 231 respondents, there were 32 seniors while 199 junior doctors, constituting a ratio of 1:6.22. The respondents variably responded to the questions regarding various attributes of the process of SIC. Overall, the junior doctors performed poorer compared to the seniors. The knowledge and attitudes of our doctors particularly the junior ones, towards the SIC are less than ideal. This results in their failure to avail this golden opportunity of doctor-patient communication to guide their patients through a solidly informative and legally valid SIC. They are often unaware of the essential preconditions of the SIC; provide incomplete information to their patients; and quite often do not ensure direct involvement of their patients in the process. Additionally they lack an understanding of using interactive computer-based programs as well as the concept of nocebo effect of informed consent.

  9. An Audit of the Knowledge and Attitudes of Doctors towards Surgical Informed Consent (SIC

    Directory of Open Access Journals (Sweden)

    Bushra Ashraf

    2014-11-01

    Full Text Available Background The Surgical Informed Consent (SIC is a comprehensive process that establishes an informationbased agreement between the patient and his doctor to undertake a clearly outlined medical or surgical intervention. It is neither a casual formality nor a casually signed piece of paper. The present study was designed to audit the current knowledge and attitudes of doctors towards SIC at a tertiary care teaching hospital in Pakistan. Methods This cross-sectional qualitative investigation was conducted under the auspices of the Department of Medical Education (DME, Pakistan Institute of Medical Sciences (PIMS, Shaheed Zulfiqar Ali Bhutto Medical University (SZABMU, Islamabad over three months period. A 19-item questionnaire was employed for data collection. The participants were selected at random from the list of the surgeons maintained in the hospital and approached face-to-face with the help of a team of junior doctors detailed for questionnaire distribution among them. The target was to cover over 50% of these doctors by convenience sampling. Results Out of 231 respondents, there were 32 seniors while 199 junior doctors, constituting a ratio of 1:6.22. The respondents variably responded to the questions regarding various attributes of the process of SIC. Overall, the junior doctors performed poorer compared to the seniors. Conclusion The knowledge and attitudes of our doctors particularly the junior ones, towards the SIC are less than ideal. This results in their failure to avail this golden opportunity of doctor-patient communication to guide their patients through a solidly informative and legally valid SIC. They are often unaware of the essential preconditions of the SIC; provide incomplete information to their patients; and quite often do not ensure direct involvement of their patients in the process. Additionally they lack an understanding of using interactive computer-based programs as well as the concept of nocebo effect of informed

  10. Precession electron diffraction for SiC grain boundary characterization in unirradiated TRISO fuel

    International Nuclear Information System (INIS)

    Lillo, T.M.; Rooyen, I.J. van; Wu, Y.Q.

    2016-01-01

    Highlights: • SiC grain orientation determined by TEM-based precession electron diffraction. • Orientation data improved with increasing TEM sample thickness. • Fraction of low angle grain boundaries lower from PED data than EBSD data. • Fractions of high angle and CSL-related boundaries similar to EBSD data. - Abstract: Precession electron diffraction (PED), a transmission electron microscopy-based technique, has been evaluated for the suitability for evaluating grain boundary character in the SiC layer of tristructural isotropic (TRISO) fuel. This work reports the effect of transmission electron microscope (TEM) lamella thickness on the quality of data and establishes a baseline comparison to SiC grain boundary characteristics, in an unirradiated TRISO particle, determined previously using a conventional electron backscatter diffraction (EBSD) scanning electron microscope (SEM)-based technique. In general, it was determined that the lamella thickness produced using the standard focused ion beam (FIB) fabrication process (∼80 nm), is sufficient to provide reliable PED measurements, although thicker lamellae (∼120 nm) were found to produce higher quality orientation data. Also, analysis of SiC grain boundary character from the TEM-based PED data showed a much lower fraction of low-angle grain boundaries compared to SEM-based EBSD data from the SiC layer of a TRISO-coated particle made using the same fabrication parameters and a SiC layer deposited at a slightly lower temperature from a surrogate TRISO particle. However, the fractions of high-angle and coincident site lattice (CSL)-related grain boundaries determined by PED are similar to those found using SEM-based EBSD. Since the grain size of the SiC layer of TRSIO fuel can be as small as 250 nm (Kirchhofer et al., 2013), depending on the fabrication parameters, and since grain boundary fission product precipitates in irradiated TRISO fuel can be nano-sized, the TEM-based PED orientation data

  11. Microstructure and mechanical properties of SiC materials

    International Nuclear Information System (INIS)

    Yarahmadi, M.

    1985-01-01

    The effect of the microstructure on the mechanical properties of SiC materials of different chemical composition (SSiC, SiSiC, and RSiC) was investigated. Furthermore, the creep strength was determined on oxidized samples and on non-pretreated samples. (HSCH)

  12. Interfacial reaction between SiC and aluminium due to extrusion and heat treatment process

    International Nuclear Information System (INIS)

    Junaidah Jai; Fauzi Ismail; Samsiah Sulaiman; Patthi Hussain, Azmi Idris; Yoichi Murakoshi

    1999-01-01

    Chemical interaction between aluminium (Al) and silicon carbide (SiC) produces aluminium carbide (Al 4 C 3 ) which presents potential problems in the production and application of Al/SiC Metal Matrix Composit (MMC). The Al 4 C 3 formed can reduce material properties such as strength in the MMC. This research work investigates the interface reaction in Al 7075/SiC MMC made through hot extrusion process. Mixed Al 7075/SiC MMC powders were pressed at 300 degree C and extruded at 500 degree C, with a reduction ratio of 20:1. The extruded MMC was then heat-treated in air at various temperatures from 560 degree C, 600 degree C, 640 degree C, 700 degree C to 800 degree C in order to observe the interface reaction of the MMC materials. The heat-treated MMCs were then analyzed under the optical microscope, X-ray Diffraction (XRD) Spectroscope and Scanning Electron Microscope (SEM) with Energy Dispersive X-ray (EDAZ) attachment to observe the interface reaction within the MMCs. This investigation confirms there was interface reaction between SiC and aluminium

  13. Theoretical studies on band structure and optical properties of 3C-SiC by FPLAPW

    International Nuclear Information System (INIS)

    Xu, P.; Xie, C.; Xu, F.; Pan, H.

    2004-01-01

    Full text: SiC has attracted more interests because of its great technological importance in microelectronic and photoelectronic devices. We have studied the band structure and optical properties of 3C-SiC by using a Full Potential Linearized Augmented Plane Waves (FPLAPW) method. The partial density of states (DOS) of Si and C atoms as well as the band structure of 3C-SiC are presented. The calculated band gap is 1.30eV, which is much less than the experimental value. It is attributed to a deficiency of the local density theory. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With the band gap correction, the real part of the dielectric function has been derived from the imaginary part by Kramers Kronig (K-K) dispersion relationship. The calculated results are in good agreement with the results measured by Petalas et al. by using ultraviolet spectroscopic ellipsometry in the photon energy range of 5eV-10eV. The band-to-band transition can be identified from the critical points exhibited in the calculated dielectric function, which is consistent with the experimental results of Petalas et al. The refractive index, extinction coefficient and reflectivity have also been calculated from obtained dielectric function, which are in agreement with the experimental results of Logothetidis and Lambrecht

  14. Thermal shock behavior of nano-sized SiC particulate reinforced AlON composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.J. [Department of Materials Science and Engineering, School of Materials and Metallurgy, Northeastern University, Shenyang, Liaoning 110004 (China); Department of Mechanical and Industrial Engineering, Ryerson University, Toronto, Ontario M5B 2K3 (Canada); Ru, H.Q., E-mail: ruhq@smm.neu.edu.cn [Department of Materials Science and Engineering, School of Materials and Metallurgy, Northeastern University, Shenyang, Liaoning 110004 (China); Chen, D.L., E-mail: dchen@ryerson.ca [Department of Mechanical and Industrial Engineering, Ryerson University, Toronto, Ontario M5B 2K3 (Canada); Zhang, N.; Liang, B. [Key Laboratory of Advanced Materials Manufacturing Technology of Liaoning Province, Shenyang University, Shenyang, Liaoning 110044 (China)

    2012-03-25

    Highlights: Black-Right-Pointing-Pointer Addition of nano-SiC particles enhances residual strength and critical temperature. Black-Right-Pointing-Pointer Young's modulus decreases with increasing quenching temperature. Black-Right-Pointing-Pointer Linear relationship between residual strength and thermal shock times is obtained. Black-Right-Pointing-Pointer Rougher fracture surfaces in the SiC-AlON composites are observed. - Abstract: Aluminum oxynitride (AlON) has been considered as a potential ceramic material for high-performance structural and advanced refractory applications. Thermal shock resistance is a major concern and an important performance index of high-temperature ceramics. While silicon carbide (SiC) particles have been proven to improve mechanical properties of AlON ceramic, the high-temperature thermal shock behavior was unknown. The aim of this investigation was to identify the thermal shock resistance and underlying mechanisms of AlON ceramic and 8 wt% SiC-AlON composites over a temperature range between 175 Degree-Sign C and 275 Degree-Sign C. The residual strength and Young's modulus after thermal shock decreased with increasing quenching temperature and thermal shock times due to large temperature gradients and thermal stresses caused by abrupt water-quenching. A linear relationship between the residual strength and thermal shock times was observed in both pure AlON and SiC-AlON composites. The addition of nano-sized SiC particles increased both residual strength and critical temperature from 200 Degree-Sign C in the monolithic AlON to 225 Degree-Sign C in the SiC-AlON composites due to the toughening effect, the lower coefficient of thermal expansion and higher thermal conductivity of SiC. The enhancement of the thermal shock resistance in the SiC-AlON composites was directly related to the change of fracture mode from intergranular cracking along with cleavage-type fracture in the AlON to a rougher fracture surface with ridge

  15. The Benefits of SiC MOSFETs in a T-Type Inverter for Grid-Tie Applications

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2016-01-01

    at the expense of increased switching losses since these outer switches must now block the full DC link voltage. Silicon Carbide (SiC) MOSFET devices potentially offer substantial advantage in this context with their lower switching losses, but the benefit of replacing all switching devices in a T-Type inverter...... with SiC MOSFETs is not so clear-cut. This paper now explores this issue by presenting a detailed comparison of the use of Si and SiC devices for a three-level T-Type inverter operating in grid-tie applications. The study uses datasheet values, switching loss measurements and calibrated heat sink thermal...... power level or the switching frequency to be significantly increased for the same device losses. Hence the use of SiC MOSFETS for T-Type inverters can be seen to be an attractive and potentially cost effective alternative, since only two switching devices per phase leg need to be upgraded....

  16. Development of Universal Controller Architecture for SiC Based Power Electronic Building Blocks

    Science.gov (United States)

    2017-10-30

    SiC Based Power Electronic Building Blocks Award Number Title of Research 30 October 2017 SUBMITTED BY D R. HERBERT L. G INN, Pl DEPT. OF...Naval Research , Philadelphia PA, Aug. 2017. • Ginn, H.L. Bakos J., "Development of Universal Controller Architecture for SiC Based Power Electronic...Controller Implementation for MMC Converters", Workshop on Control Architectures for Modular Power Conversion Systems, Office of Naval Research , Arlington VA

  17. A comparative study of the mechanical and thermal properties of defective ZrC, TiC and SiC.

    Science.gov (United States)

    Jiang, M; Zheng, J W; Xiao, H Y; Liu, Z J; Zu, X T

    2017-08-24

    ZrC and TiC have been proposed to be alternatives to SiC as fuel-cladding and structural materials in nuclear reactors due to their strong radiation tolerance and high thermal conductivity at high temperatures. To unravel how the presence of defects affects the thermo-physical properties under irradiation, first-principles calculations based on density function theory were carried out to investigate the mechanical and thermal properties of defective ZrC, TiC and SiC. As compared with the defective SiC, the ZrC and TiC always exhibit larger bulk modulus, smaller changes in the Young's and shear moduli, as well as better ductility. The total thermal conductivity of ZrC and TiC are much larger than that of SiC, implying that under radiation environment the ZrC and TiC will exhibit superior heat conduction ability than the SiC. One disadvantage for ZrC and TiC is that their Debye temperatures are generally lower than that of SiC. These results suggest that further improving the Debye temperature of ZrC and TiC will be more beneficial for their applications as fuel-cladding and structural materials in nuclear reactors.

  18. Joining of pressureless-sintered SiC to stainless steel using Ag-Cu alloy and insert-metals

    International Nuclear Information System (INIS)

    Yano, Toyohiko; Takada, Naohiro; Iseki, Takayoshi

    1987-01-01

    Brazing of pressureless-sintered SiC to stainless steel using Ag-28 wt% Cu alloy was studied. In SiC plate joined to stainless steel rod (6 mm in diameter) using an Ag-Cu alloy powder containing 1.5 wt% Ti, the bond strength increased with decreasing brazing temperature and holding time. When the increased size of stainless steel plate (10 x 10 x 4 mm), joining was unsuccessful by the method mentioned above and even with Ti insert-metal. However, simultaneous use of Ti and Mo as insert-metal gave a good bonding in the order SiC/Ti/Mo/stainless steel, because of relaxation of residual stress due to thermal expansion mismatch. The shear strength was 30 - 50 MPa. A thin layer, probably Ti 3 SiC 2 , was observed at the interface between SiC and brazing filler immediately after melting. But with increasing both temperature and time, Ti 5 Si 3 (C) and TiC x were formed if Ti was continuously provided from the brazing filler. Since the interface of Ti 3 SiC 2 and either Ti 5 Si 3 (C) or TiC x seemed to be brittle, the formation of Ti 5 Si 3 (C) and TiC x decreased the bond strength. At lower temperature and short time, a high bond strength is expected when Ti was inserted in contact with SiC. (author)

  19. Manufacturing and characterization of porous SiC for flow channel inserts in dual-coolant blanket designs

    Energy Technology Data Exchange (ETDEWEB)

    Bereciartu, Ainhoa [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Ordas, Nerea, E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Garcia-Rosales, Carmen [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Morono, Alejandro; Malo, Marta; Hodgson, Eric R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abella, Jordi [Institut Quimic de Sarria, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, Luis [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

    2011-10-15

    SiC is the primary candidate for the flow channel inserts in dual-coolant blanket concepts. Porous SiC ceramics are attractive candidates for this non-structural application, since they can satisfy the required properties through a low cost manufacturing route, compared to SiC{sub f}/SiC. This work shows first results of the manufacturing of porous SiC ceramics prepared with different amounts of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} as sintering additives. C powders were used as pore-formers by their burnout during oxidation after sintering. Comparison of microstructure, porosity, flexural strength, thermal and electrical conductivity and corrosion under Pb-15.7Li of porous SiC without and with sintering additives is presented. The addition of 2.5 wt.% of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} improves the mechanical properties, and reduces the thermal and electrical conductivity down to reasonable values. Preliminary corrosion tests under Pb-15.7 Li at 500 deg. C show that the absence of a dense coating on porous SiC leads to poor corrosion behavior.

  20. Single Channel 106 Gbit/s 16QAM Wireless Transmission in the 0.4 THz Band

    DEFF Research Database (Denmark)

    Pang, Xiaodan; Jia, Shi; Ozolins, Oskars

    2017-01-01

    We experimentally demonstrate a single channel 32-GBd 16QAM THz wireless link operating in the 0.4 THz band. Post-FEC net data rate of 106 Gbit/s is successfully achieved without any spatial/frequency multiplexing.......We experimentally demonstrate a single channel 32-GBd 16QAM THz wireless link operating in the 0.4 THz band. Post-FEC net data rate of 106 Gbit/s is successfully achieved without any spatial/frequency multiplexing....

  1. Rare-earth element doped Si3N4/SiC micro/nano-composites-RT and HT mechanical properties

    Czech Academy of Sciences Publication Activity Database

    Lojanová, Š.; Tatarko, P.; Chlup, Zdeněk; Hnatko, M.; Dusza, J.; Lenčéš, Z.; Šajgalík, P.

    2010-01-01

    Roč. 30, č. 9 (2010), s. 1931-1944 ISSN 0955-2219 Institutional research plan: CEZ:AV0Z20410507 Keywords : Si3N4 * SiC * Nano-composites * Fracture toughness * Hardness * Strength * Creep Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.574, year: 2010

  2. Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics

    Science.gov (United States)

    Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong

    2016-11-01

    PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.

  3. Development of an S-band cavity Beam Position Monitor for ATF2

    Science.gov (United States)

    Heo, A.; Kim, E.-S.; Kim, H.; Son, D.; Honda, Y.; Tauchi, T.

    2013-04-01

    We have developed an S-band cavity Beam Position Monitor (BPM) in order to measure the position of an electron beam in the final focus area at ATF2, which is the test facility for the final focus design for the International Linear Collider (ILC). The lattice of the ILC Beam Delivery System (BDS) has been modified, requiring a larger physical aperture of 40 mm in the final focus area. The beam orbit measurement in this area is now covered with high resolution S-Band cavity BPMs. In this paper we summarize the design of the cavity BPM and the first experimental results. The calibration slopes were measured as 0.87 counts/μm in the x-coordinate direction and 1.16 counts/μm in the y-coordinate direction.

  4. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  5. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

    2008-11-15

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

  6. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    International Nuclear Information System (INIS)

    Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

    2008-01-01

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

  7. FE simulation of the indentation deformation of SiC modified vinylester composites in respect to their abrasive wear performance

    Directory of Open Access Journals (Sweden)

    2008-10-01

    Full Text Available The abrasive sliding friction and wear behaviours of silicon carbide (SiC filled vinylester (VE composites were investigated. The average grain size of the incorporated SiC particles was varied, holding the volume content of them in every case at 16 vol%. Mechanical properties (hardness, compression modulus, yield stress of the filled and neat VE were determined. The tribological properties were investigated in block (composite – on – ring (steel test configuration. The steel counter bodies were covered with abrasive papers of different graining. Coefficient of friction (COF and specific wear rate of the VE + SiC composites were determined. It was observed that the wear resistance increases with increasing average filler grain size and with decreasing abrasiveness of the counter surface. The COF of the VE + SiC composites is independent of the size of the incorporated particles, but it is strongly influenced by the abrasiveness of the counter body. The worn surfaces of the VE + SiC systems were analysed in scanning electron microscope (SEM to deduce the typical wear mechanisms. The size effect of the SiC filler particles onto the abrasive wear characteristics was investigated by assuming that the roughness peaks of the abrasive paper and the indenter of the microhardness test cause similar micro scaled contact deformations in the composites. Therefore FE method was used to simulate the micro scaled deformation process in the VE + SiC systems during microindentation tests. The FE results provided valuable information on how to explain the size effect of the incorporated SiC filler.

  8. Bi2Se3/CdS/TiO2 hybrid photoelectrode and its band-edge levels

    International Nuclear Information System (INIS)

    Zhang, Qi; Su, Jun; Zhang, Xianghui; Li, Jian; Zhang, Aiqing; Gao, Yihua

    2012-01-01

    Highlights: ► CVD synthesis of Bi 2 Se 3 nanoparticles. ► Bi 2 Se 3 and CdS co-sensitized TiO 2 nanorod arrays electrode was assembled by CVD. ► Direct physical contact heterojunctions were formed at the interfaces of electrode. ► Cascade structure of band-edge levels was formed in Bi 2 Se 3 /CdS/TiO 2 electrode. - Abstract: Bismuth selenide (Bi 2 Se 3 ) was chosen as the sensitizer to TiO 2 nanorod (NR) arrays photoelectrode to harvest infrared (IR) light for its narrow band gap. For utilizing more amount of IR solar energy, Bi 2 Se 3 nanoparticles (NPs) were grown up to a relative larger grain size. And, a cadmium sulfide (CdS) NPs intermediate layer was introduced to help, to coordinate, the structure of band-edge levels in Bi 2 Se 3 /CdS/TiO 2 electrode. Here, a chemical vapor deposition (CVD) strategy was introduced to assemble this kind of composite photoelectrode. And a cascade structure of band-edge levels constructed in it when achieving electrostatic equilibrium in Na 2 S/Na 2 SO 3 aqueous solution electrolyte revealed by electrochemical analysis method, which will facilitate the hydrogen generation.

  9. Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

    Directory of Open Access Journals (Sweden)

    Xiaoyong Ren

    2014-01-01

    Full Text Available Ultrafine tungsten carbide-nickel (WC-Ni cemented carbides with varied fractions of silicon carbide (SiC nanowhisker (0–3.75 wt.% were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC and tantalum carbide (TaC as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker.

  10. Effect of nitrogen on the electrochemical performance of core–shell structured Si/C nanocomposites as anode materials for Li-ion batteries

    International Nuclear Information System (INIS)

    Tao, Hua-Chao; Huang, Mian; Fan, Li-Zhen; Qu, Xuanhui

    2013-01-01

    Highlights: ► N-containing core–shell structured Si/C nanocomposites are prepared via two steps. ► The N-containing Si/C nanocomposites exhibit high capacity and excellent cycling stability. ► The appropriate nitrogen has a beneficial effect on the electrochemical performance. -- Abstract: Core–shell structured Si/C nanocomposites with different nitrogen contents are prepared by in situ polymerization of aniline in the suspension of silicon nanoparticles followed by carbonization of Si/polyaniline (PANI) nanocomposites at different temperatures. The nitrogen contents of Si/C nanocomposites decrease gradually with increasing carbonization temperatures. The effect of nitrogen contents on the electrochemical performance of Si/C nanocomposites as anode materials for lithium ion batteries is investigated. It is found that the Si/C nanocomposites with 4.75 wt.% nitrogen exhibit the high specific capacity of 795 mAh g −1 after 50 cycles at a current density of 100 mA g −1 and excellent cycling stability. The appropriate nitrogen in Si/C nanocomposites plays a beneficial role in the improvement of electrochemical performance. The nitrogen in Si/C nanocomposites increases the reversible capacity, which may be due to the formation of vacancies and dangling bonds around the nitrogen sites

  11. Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

    International Nuclear Information System (INIS)

    Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

    1984-01-01

    The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

  12. Over-the-air in-band full-duplex system with hybrid RF optical and baseband digital self-interference cancellation

    Science.gov (United States)

    Zhang, Yunhao; Li, Longsheng; Bi, Meihua; Xiao, Shilin

    2017-12-01

    In this paper, we propose a hybrid analog optical self-interference cancellation (OSIC) and baseband digital SIC (DSIC) system for over-the-air in-band full-duplex (IBFD) wireless communication. Analog OSIC system is based on optical delay line, electro-absorption modulation lasers (EMLs) and balanced photodetector (BPD), which has the properties of high adjusting precision and broad processing bandwidth. With the help of baseband DSIC, the cancellation depth limitation of OSIC can be mitigated so as to achieve deeper total SIC depth. Experimental results show about 20-dB depth by OSIC and 10-dB more depth by DSIC over 1GHz broad baseband, so that the signal of interest (SOI) overlapped by wideband self-interference (SI) signal is better recovered compared to the IBFD system with OSIC or DSIC only. The hybrid of OSIC and DSIC takes advantages of the merits of optical devices and digital processors to achieve deep cancellation depth over broad bandwidth.

  13. Preparation of SiC and Ag/SiC coatings on TRISO surrogate particles by Pulsed Laser Deposition

    International Nuclear Information System (INIS)

    Lustfeld, Martin; Reinecke, Anne-Maria; Lippman, Wolfgang; Hurtado, Antonio; Ruiz-Moreno, Ana

    2014-01-01

    Recently published research results suggest significant advantages of using nanocrystalline instead of coarse grained SiC for nuclear applications. In this work it was attempted to prepare nanocrystalline SiC coatings on TRISO surrogate kernels using the pulsed laser deposition (PLD) process. As a plasma-based physical vapor deposition process, PLD allows the synthesis of dense and stoichiometric coatings in the amorphous or nanocrystalline phase. Two different types of TRISO surrogate kernels were used with outer diameters of 500 pm and 800 μm, respectively: plain Al_2O_3 kernels and ZrO_2 kernels coated with TRISO-like buffer and pyrolytic carbon (PyC) layers. In a second step, the PLD process was used for the preparation of multilayer coatings consisting of a Ag layer buried with a SiC layer. The samples were analyzed regarding their morphology, microstructure, crystalline phase and chemical composition using scanning electron microscopy (SEM), laser scanning microscopy (LSM), x-ray diffraction (XRD) and energy- dispersive x-ray spectroscopy (EDX). The samples will be used in future work for out-of-pile investigations of both thermal stability and Ag retention capability of nanocrystalline SiC layers. X-ray diflraction measurements did not confirm nano crystallinity of the SiC coatings, but rather indicated that the coatings were mainly amorphous possibly with a little fraction of the nanocrystalline phase. Further analyses showed that some of the SiC coatings had an adequate stoichiometric composition and that Ag/SiC multilayer coatings were successfully produced by PLD. Coatings on TRISO- like buffer and PyC layers exhibited good adhesion to the substrate while coatings on Al_2O_3 kernels were susceptible to delamination. The results suggest that PLD is generally suitable for SiC coating of TRISO particles. However, further optimization of the process parameters such as the coating temperature is needed to obtain fine- grained non-columnar SiC layers that are

  14. Zirconia toughened SiC whisker reinforced alumina composites small business innovation research

    Science.gov (United States)

    Loutfy, R. O.; Stuffle, K. L.; Withers, J. C.; Lee, C. T.

    1987-01-01

    The objective of this phase 1 project was to develop a ceramic composite with superior fracture toughness and high strength, based on combining two toughness inducing materials: zirconia for transformation toughening and SiC whiskers for reinforcement, in a controlled microstructure alumina matrix. The controlled matrix microstructure is obtained by controlling the nucleation frequency of the alumina gel with seeds (submicron alpha-alumina). The results demonstrate the technical feasibility of producing superior binary composites (Al2O3-ZrO2) and tertiary composites (Al2O3-ZrO2-SiC). Thirty-two composites were prepared, consolidated, and fracture toughness tested. Statistical analysis of the results showed that: (1) the SiC type is the key statistically significant factor for increased toughness; (2) sol-gel processing with a-alumina seed had a statistically significant effect on increasing toughness of the binary and tertiary composites compared to the corresponding mixed powder processing; and (3) ZrO2 content within the range investigated had a minor effect. Binary composites with an average critical fracture toughness of 6.6MPam sup 1/2, were obtained. Tertiary composites with critical fracture toughness in the range of 9.3 to 10.1 MPam sup 1/2 were obtained. Results indicate that these composites are superior to zirconia toughened alumina and SiC whisker reinforced alumina ceramic composites produced by conventional techniques with similar composition from published data.

  15. Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

    Science.gov (United States)

    2012-01-26

    of ZrB2-30 mol% SiC Electrically Heated Ribbons over 1-6 µm5 Spectral radiosities of direct electrically-heated ZrB2-30 mol% SiC specimens were mea...where RT (λ) is the spectral radiosity , h is Planck’s constant, k is Boltzmann’s constant, λ is wavelength, c is the speed of light, and T is the...Thus spectral radiosity measurements were performed at an angle normal to the ribbon surface. Specimens were loaded and removed from the chamber via an O

  16. Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

    Science.gov (United States)

    Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

    2010-03-01

    An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

  17. Neutron displacement damage cross sections for SiC

    International Nuclear Information System (INIS)

    Huang Hanchen; Ghoniem, N.

    1993-01-01

    Calculations of neutron displacement damage cross sections for SiC are presented. We use Biersack and Haggmark's empirical formula in constructing the electronic stopping power, which combines Lindhard's model at low PKA energies and Bethe-Bloch's model at high PKA energies. The electronic stopping power for polyatomic materials is computed on the basis of Bragg's Additivity Rule. A continuous form of the inverse power law potential is used for nuclear scattering. Coupled integro-differential equations for the number of displaced atoms j, caused by PKA i, are then derived. The procedure outlined above gives partial displacement cross sections, displacement cross sections for each specie of the lattice, and for each PKA type. The corresponding damage rates for several fusion and fission neutron spectra are calculated. The stoichiometry of the irradiated material is investigated by finding the ratio of displacements among various atomic species. The role of each specie in displacing atoms is also investigated by calculating the fraction of displacements caused by each PKA type. The study shows that neutron displacement damage rates of SiC in typical magnetic fusion reactor first walls will be ∝10-15 dpa MW -1 m 2 ; in typical lead-protected inertial confinement fusion reactor first walls they will be ∝15-20 dpa MW -1 m 2 . For fission spectra, we find that the neutron displacement damage rate of SiC is ∝74 dpa per 10 27 n/m 2 in FFTF, ∝39 dpa per 10 27 n/m 2 in HFIR, and 25 dpa per 10 27 n/m 2 in NRU. Approximately 80% of displacement atoms are shown to be of the carbon-type. (orig.)

  18. Optical band gap energy and ur bach tail of CdS:Pb2+ thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)

    2016-11-01

    Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)

  19. Control of SiC Based Front-End Rectifier under Unbalanced Supply Voltage

    DEFF Research Database (Denmark)

    Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh

    2015-01-01

    A voltage source converter is used as a front end converter typically. In this paper, a converter which is realized using SiC MOSFET is considered. Due to SiC MOSFET, a switching frequency more than 50 kHz can be achieved. This can help increasing the current control loop bandwidth, which is not ...... together with a positive-sequence current controller for the front-end rectifier. A gain in the feedforward term can be changed to control the negative-sequence current. Simulation results are presented to verify the theory....

  20. Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

    Science.gov (United States)

    Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

    2012-05-01

    The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

  1. Retention and damage in 3C-β SiC irradiated with He and H ions

    Energy Technology Data Exchange (ETDEWEB)

    Deslandes, Alec, E-mail: alec.deslandes@csiro.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Guenette, Mathew C. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Thomsen, Lars [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Ionescu, Mihail; Karatchevtseva, Inna; Lumpkin, Gregory R. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia)

    2016-02-15

    3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation.

  2. Self-Organized Graphene Nanoribbons on SiC(0001) Studied with Scanning Tunneling Microscopy

    Science.gov (United States)

    Torrance, David; Zhang, Baiqian; Hoang, Tien; First, Phillip

    2012-02-01

    Graphene nanoribbons grown directly on nanofacets of SiC(0001) offer an attractive union of top-down and bottom-up fabrication techniques. Nanoribbons have been shown to form on the facets of templated silicon carbide substrates,ootnotetextSprinkle et al., Nat. Nanotech. 5, 727 (2010). but also appear spontaneously along step-bunches on vicinal SiC(0001) miscut slightly towards . These self-organized graphene nanoribbons were characterized with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) in ultra-high vacuum. Our measurements indicate that the graphene forms a continuous ``buffer layer'' across the SiC(0001) terraces during nanoribbon formation, with the zigzag edge of the buffer layer aligned parallel to the step-bunched nanofacets. Scanning tunneling microscopy/spectroscopy (STM/STS) was used to characterize the topography and electrical characteristics of the graphene nanoribbons. These measurements indicate that the graphene nanoribbons are highly-crystalline with predominantly zigzag edges.

  3. Joining technology—A challenge for the use of SiC components in HTRs

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, M., E-mail: marion.herrmann@tu-dresden.de; Meisel, P.; Lippmann, W.; Hurtado, A.

    2016-09-15

    The availability of suitable joining technologies is paramount to the further advancement of ceramic components and their use in HTRs. Among other joining technologies, a modified brazing technology using a laser beam for heating the components to be joined has been developed at TU Dresden. The laser-induced heating behavior of the ceramic material is determined by the interactions between the material and the laser beam. This was shown in two different silicon carbide materials (SSiC and SiC{sub f}-reinforced ceramic material) using a diode laser with wavelengths 808 nm and 940 nm. The laser-based technique was illustrated by three different examples: sealing of monolithic SiC with a pin configuration for fuel claddings, sealing of SiC heat pipes with a length of 1 m, and demonstration of the transferability of the laser technique to fiber-reinforced components by means of a SiC{sub f}/SiCN material. Because the covalent bonding of SiC does not allow conventional welding, much research has been devoted to developing alternative filler systems. Glass or glass–ceramic fillers enable the tailoring of properties such as CTE and viscosity. Glasses are thermally stable up to their glass transition temperatures. It was shown that the crystallization of the yttrium aluminosilicate glass composition of the present work allows it to be used at 1050 °C without any significant changes occurring in braze tightness. For the SiC heat pipes with sodium as the working fluid, a sodium-resistant metal braze consisting of Ni–Ti–Si was formed. The long-term resistance of this filler to sodium at 800 °C was proven. The results demonstrate the possibility of using the laser-based joining technique for the joining of different SiC materials as well as for different brazing materials.

  4. GPM GROUND VALIDATION NASA S-BAND DUAL POLARIMETRIC (NPOL) DOPPLER RADAR IFLOODS V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GPM Ground Validation NASA S-Band Dual Polarimetric (NPOL) Doppler Radar IFloodS data set was collected from April 30, 2013 to June 16, 2013 near Traer, Iowa as...

  5. Investigation of reactivity between SiC and Nb-1Zr in planned irradiation creep experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, C.A.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    Thermodynamic calculations and diffusion couple experiments showed that SiC and Nb-1Zr were reactive at the upper range of temperatures anticipated in the planned irradiation creep experiment. Sputter-deposited aluminum oxide (Al{sub 2}O{sub 3}) was selected as a diffusion barrier coating. Experiments showed that although the coating coarsened at high temperature it was an effective barrier for diffusion of silicon from SiC into Nb-1Zr. Therefore, to avoid detrimental reactions between the SiC composite and the Nb-1Zr pressurized bladder during the planned irradiation creep experiment, a coating of Al{sub 2}O{sub 3} will be required on the Nb-1Zr bladder.

  6. The hierarchically organized splitting of chromosome bands into sub-bands analyzed by multicolor banding (MCB).

    Science.gov (United States)

    Lehrer, H; Weise, A; Michel, S; Starke, H; Mrasek, K; Heller, A; Kuechler, A; Claussen, U; Liehr, T

    2004-01-01

    To clarify the nature of chromosome sub-bands in more detail, the multicolor banding (MCB) probe-set for chromosome 5 was hybridized to normal metaphase spreads of GTG band levels at approximately 850, approximately 550, approximately 400 and approximately 300. It could be observed that as the chromosomes became shorter, more of the initial 39 MCB pseudo-colors disappeared, ending with 18 MCB pseudo-colored bands at the approximately 300-band level. The hierarchically organized splitting of bands into sub-bands was analyzed by comparing the disappearance or appearance of pseudo-color bands of the four different band levels. The regions to split first are telomere-near, centromere-near and in 5q23-->q31, followed by 5p15, 5p14, and all GTG dark bands in 5q apart from 5q12 and 5q32 and finalized by sub-band building in 5p15.2, 5q21.2-->q21.3, 5q23.1 and 5q34. The direction of band splitting towards the centromere or the telomere could be assigned to each band separately. Pseudo-colors assigned to GTG-light bands were resistant to band splitting. These observations are in concordance with the recently proposed concept of chromosome region-specific protein swelling. Copyright 2003 S. Karger AG, Basel

  7. CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

    International Nuclear Information System (INIS)

    Kheloufi, Nawal; Bouzid, Abderrazak

    2016-01-01

    We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  8. Thermal detection mechanism of SiC based hydrogen resistive gas sensors

    Science.gov (United States)

    Fawcett, Timothy J.; Wolan, John T.; Lloyd Spetz, Anita; Reyes, Meralys; Saddow, Stephen E.

    2006-10-01

    Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.

  9. Intramolecular interactions stabilizing compact conformations of the intrinsically disordered kinase-inhibitor domain of Sic1: a molecular dynamics investigation.

    Directory of Open Access Journals (Sweden)

    Matteo eLambrughi

    2012-11-01

    Full Text Available Cyclin-dependent kinase inhibitors (CKIs are key regulatory proteins of the eukaryotic cell cycle, which modulate cyclin-dependent kinase (Cdk activity. CKIs perform their inhibitory effect by the formation of ternary complexes with a target kinase and its cognate cyclin. These regulators generally belong to the class of intrinsically disordered proteins (IDPs, which lack a well-defined and organized three-dimensional structure in their free state, undergoing folding upon binding to specific partners. Unbound IDPs are not merely random-coil structures, but can present intrinsically folded structural units (IFSUs and collapsed conformations. These structural features can be relevant to protein function in vivo.The yeast CKI Sic1 is a 284-amino acid IDP that binds to Cdk1 in complex with the Clb5,6 cyclins, preventing phosphorylation of G1 substrates and, therefore, entrance to the S phase. Sic1 degradation, triggered by multiple phosphorylation events, promotes cell-cycle progression. Previous experimental studies pointed out a propensity of Sic1 and its isolated domains to populate both extended and compact conformations. The present contribution provides models of the compact conformations of the Sic1 kinase-inhibitory domain (KID by all-atom molecular-dynamics simulations in explicit solvent and in the absence of interactors. The results are integrated by spectroscopic and spectrometric data. Helical IFSUs are identified, along with networks of intramolecular interactions. The results identify a group of hub residues and electrostatic interactions which are likely to be involved in the stabilization of globular states.

  10. Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Thomé, Lionel, E-mail: thome@csnsm.in2p3.fr; Debelle, Aurélien; Garrido, Frédérico; Sattonnay, Gaël; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Velisa, Gihan [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania); Miro, Sandrine; Trocellier, Patrick; Serruys, Yves [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2015-03-14

    Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (S{sub n}) and Electronic (S{sub e}) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (S{sub n} and S{sub e}), whereas single low-energy irradiation (S{sub n} alone) or even sequential (S{sub n} + S{sub e}) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between S{sub n} and S{sub e} in ion-irradiation experiments. This work is interesting for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where recovery S{sub n}/S{sub e} effects may preserve the integrity of nuclear devices.

  11. Enhanced oxidation resistance of SiC coating on Graphite by crack healing at the elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jae-Won; Kim, Eung-Seon; Kim, Jae-Un; Kim, Yoo-Taek [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Windes, William E. [Idaho National Laboratory, Idaho (United States)

    2015-10-15

    An oxidation protective SiC coating on the graphite components could assist in slowing the oxidation down. However, the irradiation induced dimensional changes in the graphite (shrinkage followed by swelling) can occur, while the SiC CVD coating has been reported to swell even at a low dose neutron irradiation. In this work, functionally gradient electron beam evaporative coating with an ion beam processing was firstly conducted and then SiC coating on the FG coating to the desired thickness is followed. For the crack healing, both the repeated EB-PVD and CVD were performed. Oxidation and thermal cycling tests of the coated specimens were performed and reflected in the process development. In this work, efforts have been paid to heal the cracks in the SiC coated layer on graphite with both EB-PVD and CVD. CVD seems to be more appropriate coating method for crack healing probably due to its excellent crack-line filling capability for high density and high aspect ratio.

  12. Synthesis of SiC nanoparticles by SHG 532 nm Nd:YAG laser ablation of silicon in ethanol

    Science.gov (United States)

    Khashan, Khawla S.; Ismail, Raid A.; Mahdi, Rana O.

    2018-06-01

    In this work, colloidal spherical nanoparticles NPs of silicon carbide SiC have been synthesized using second harmonic generation 532 nm Nd:YAG laser ablation of silicon target dipped in ethanol solution at various laser fluences (1.5-5) J/cm2. X-Ray diffraction XRD, scanning electron microscopy SEM, transmission electron microscope TEM, Fourier transformed infrared spectroscopy FT-IR, Raman spectroscopy, photoluminescence PL spectroscopy, and UV-Vis absorption were employed to examine the structural, chemical and optical properties of SiC NPs. XRD results showed that all synthesised SiC nanoparticles are crystalline in nature and have hexagonal structure with preferred orientation along (103) plane. Raman investigation showed three characteristic peaks 764,786 and 954 cm-1, which are indexing to transverse optic TO phonon mode and longitudinal optic LO phonon mode of 4H-SiC structure. The optical absorption data showed that the values of optical energy gap of SiC nanoparticles prepared at 1.5 J/cm2 was 3.6 eV and was 3.85 eV for SiC synthesised at 5 J/cm2. SEM investigations confirmed that the nanoparticles synthesised at 5 J/cm2 are agglomerated to form larger particles. TEM measurements showed that SiC particles prepared at 1.5 J/cm2 have spherical shape with average size of 25 nm, while the particles prepared at 5 J/cm2 have an average size of 55 nm.

  13. Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

    Energy Technology Data Exchange (ETDEWEB)

    Morozova, N. K., E-mail: MorozovaNK@mail.ru; Kanakhin, A. A.; Miroshnikova, I. N. [Moscow Power Engineering Institute, National Research University (Russian Federation); Galstyan, V. G. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2013-08-15

    The microcathodoluminescence (MCL) and photoreflection spectra of CdS:O layers implanted with oxygen ions to 4 Multiplication-Sign 10{sup 20} cm{sup -3} are investigated. Used method of MCL spectroscopy yields information only about the implanted-layer volume. Exciton MCL spectra, which allow one to determine the concentration of dissolved oxygen in the CdS:O layers and the influence of deviation of the substrates from stoichiometry, are recorded. The homogeneity of the ion-implanted layers is studied by cathodoluminescence (CL) scanning electron microscopy. The relationship between light-emitting areas and the luminescence band at {approx}630 nm is established. The reason for enhancement of this band upon radiation annealing is revealed and its nature as the luminescence of F{sup +} centers in CdS is confirmed. New photoreflection spectroscopy data are obtained, which describe the specific behavioral features of oxygen on the layer surface as an isoelectronic impurity in highly mismatched alloys (HMAs). It is shown that sulfur completely bonds and removes oxygen from CdS:O. Oxygen-free CdS remains on the surface in the form of nanoparticles, the size of which depends on the oxygen concentration in the CdS:O layer bulk. The results obtained are in agreement with the predictions of band anticrossing theory.

  14. Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

    Science.gov (United States)

    O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

    2015-03-01

    We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

  15. Direct Detection of Unnatural DNA Nucleotides dNaM and d5SICS using the MspA Nanopore.

    Directory of Open Access Journals (Sweden)

    Jonathan M Craig

    Full Text Available Malyshev et al. showed that the four-letter genetic code within a living organism could be expanded to include the unnatural DNA bases dNaM and d5SICS. However, verification and detection of these unnatural bases in DNA requires new sequencing techniques. Here we provide proof of concept detection of dNaM and d5SICS in DNA oligomers via nanopore sequencing using the nanopore MspA. We find that both phi29 DNA polymerase and Hel308 helicase are capable of controlling the motion of DNA containing dNaM and d5SICS through the pore and that single reads are sufficient to detect the presence and location of dNaM and d5SICS within single molecules.

  16. A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

    Science.gov (United States)

    Asthana, R.; Rohatgi, P. K.

    1993-01-01

    Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

  17. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

    Science.gov (United States)

    Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

    2018-04-18

    The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  18. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

    Science.gov (United States)

    Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

    2018-04-01

    The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  19. Microestructura y propiedades mecánicas del SiC biomórfico obtenido a partir de eucalipto

    Directory of Open Access Journals (Sweden)

    Presas, M.

    2005-12-01

    Full Text Available The development of cellular ceramics with a biological structure, like bones and wood, has been a matter of interest in recent years. A low density highly interconnected structure, perfected by evolution, rises as the principal advantage of these materials. In the case of biomimetic SiC (biomorphic SiC, or bioSiC, the fabrication process technique is quite simple: a piece of wood is pyrolysed and is infiltrated with molten silicon after, the final product is a composite Si/SiC, which replicates the wood anisotropic microstructure This work focus on the mechanical properties of bioSiC fabricated using eucalyptus wood as precursor (hard wood with a bimodal channel distribution. It has been studied the mechanical behavior of this bioSiC (compression strength, flexure strength, fracture toughness and elastic modulus between 25 and 1350 oC. It is also discussed the relationship between mechanical behavior of the material and its microstructure.

    El desarrollo de materiales cerámicos con una estructura de tipo celular, similar a la del hueso o la madera, ha sido una cuestión que ha suscitado un gran interés en los últimos años. Su atractivo se debe al hecho de poseer una estructura porosa altamente interconectada de baja densidad, perfeccionada por la evolución. En el caso del SiC biomórfico (bio-SiC el proceso de fabricación es sencillo: se piroliza una pieza de madera y a continuación se inyecta con silicio líquido, el material así obtenido es un compuesto Si/SiC en el que el SiC mimetiza la estructura de la madera original. En este trabajo se estudian las propiedades mecánicas del SiC biomórfico fabricado a partir de eucalipto (madera dura con una distribución bimodal de poros. Se ha estudiado el comportamiento mecánico del mismo (resistencia a compresión, resistencia a flexión, tenacidad de fractura y módulo de elasticidad entre 25 y 1350 oC. Asimismo, se discute la relación entre el comportamiento mecánico del material y

  20. Technology roadmap for development of SiC sensors at plasma processes laboratory

    Directory of Open Access Journals (Sweden)

    Mariana Amorim Fraga

    2010-08-01

    Full Text Available Recognizing the need to consolidate the research and development (R&D activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i introduction, ii what we have already done in the past, iii what we are doing in this moment, and iv our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.