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Sample records for s-band power amplifier

  1. S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

    Science.gov (United States)

    Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

    This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

  2. S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

    International Nuclear Information System (INIS)

    Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

    2005-01-01

    S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

  3. Power Amplifier Design for E-band Wireless System Communications

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

    2008-01-01

    E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present...... a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications...

  4. CMOS 60-GHz and E-band power amplifiers and transmitters

    CERN Document Server

    Zhao, Dixian

    2015-01-01

    This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

  5. Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

    Energy Technology Data Exchange (ETDEWEB)

    Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

    2012-01-01

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  6. High Efficiency S-Band 20 Watt Amplifier

    Data.gov (United States)

    National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

  7. W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  8. W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  9. MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

  10. Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

    CERN Document Server

    Božanić, Mladen

    2016-01-01

    This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

  11. A Novel Ku-Band/Ka-Band and Ka-Band/E-Band Multimode Waveguide Couplers for Power Measurement of Traveling-Wave Tube Amplifier Harmonic Frequencies

    Science.gov (United States)

    Wintucky, Edwin G.; Simons, Rainee N.

    2015-01-01

    This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).

  12. The design of a linear L-band high power amplifier for mobile communication satellites

    Science.gov (United States)

    Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

    1990-01-01

    A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

  13. X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

    Directory of Open Access Journals (Sweden)

    Kyung-Tae Bae

    2017-11-01

    Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

  14. High power X-band coaxial amplifier experiments

    International Nuclear Information System (INIS)

    Davis, T.J.; Nation, J.A.

    1991-01-01

    Studies are continuing on the development of X-band coaxial microwave amplifiers as a source for next generation linear colliders. Coaxial amplifiers employ an annular electron beam propagating between inner and outer drift tube conductors, a configuration which allows large increases in beam current over standard pencil beam amplifiers. Large average diameter systems may still be used without mode competition since TM mode cutoff frequencies are controlled by the separation between conductors. A number of amplifier configurations are being studied, all primed by a driven initial cavity which resonates around 9 GHz. Simple theory of coaxial systems and particle-in-cell simulations are presented, as well as initial experimental results using a 420 keV, 7-8 kA, 9 cm diameter annular beam

  15. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  16. Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

    Science.gov (United States)

    Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

    2017-09-01

    This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

  17. High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  18. S-band 45 MW peak power test facility at RRCAT

    International Nuclear Information System (INIS)

    Wanmode, A. Yashwant; Reddy, Sivananda; Mulchandani, J.; Mohania, Praveen; Shrivastava, B. Purushottam

    2015-01-01

    RRCAT is engaged in the design and development of high energy electron LINAC as future injectors for the Booster Synchrotron for Indus-1 and Indus-2 SRS. The high energy LINAC will need microwave power over 30 MW depending on the number of structures to be energized. In order to have advance preparations for this development a 45 MW S-Band test facility has been designed and developed at RRCAT. The test stand is built around a 45 MW peak power S-band pulsed klystron, A conventional pulse forming network based modulator for klystron has been designed and developed. The WR-284 waveguide transmission system consisting of dual directional couplers, SF 6 gas pressurization unit, high power waveguide load and arc sensor has been developed and interfaced with the klystron. The klystron has been successfully tested up to 30 MW peak power at 2856 MHz on SF 6 pressurized waveguide line. A solid state S Band driver amplifier up to 1 kW output power was designed developed for driving the klystron. This paper describes the results of 30 MW peak power test of this facility. (author)

  19. An S-band high gain relativistic klystron amplifier with high phase stability

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

    2014-11-15

    For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

  20. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

    NARCIS (Netherlands)

    Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

    2002-01-01

    This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

  1. S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

    NARCIS (Netherlands)

    van Heijningen, M; Visser, G.C.; Wurfl, J.; van Vliet, Frank Edward

    2008-01-01

    Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz.

  2. S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

    NARCIS (Netherlands)

    Heijningen, M. van; Visser, G.C.; Wuerfl, J.; Vliet, F.E. van

    2008-01-01

    This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output

  3. K-Band Traveling-Wave Tube Amplifier

    Science.gov (United States)

    Force, Dale A.; Simons, Rainee N.; Peterson, Todd T.; Spitsen, Paul C.

    2010-01-01

    A new space-qualified, high-power, high-efficiency, K-band traveling-wave tube amplifier (TWTA) will provide high-rate, high-capacity, direct-to-Earth communications for science data and video gathered by the Lunar Reconnaissance Orbiter (LRO) during its mission. Several technological advances were responsible for the successful demonstration of the K-band TWTA.

  4. A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

    NARCIS (Netherlands)

    Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

    1999-01-01

    ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

  5. Broadband S-band class E HPA

    NARCIS (Netherlands)

    Wanum, M.; van Dijk, R.; de Hek, A.P.; van Vliet, Frank Edward

    2009-01-01

    A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 times 2.8 mm2.

  6. W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology

    NARCIS (Netherlands)

    Heijningen,M. van; Rodenburg, M.; Vliet, F.E. van; Massler, M.; Tessmann, A.; Brückner, F.; Müller, S.; Schwantuschke, D.; Quay; Narhi, T.

    2012-01-01

    The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10

  7. A 500-600 MHz GaN power amplifier with RC-LC stability network

    Science.gov (United States)

    Ma, Xinyu; Duan, Baoxing; Yang, Yintang

    2017-08-01

    A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

  8. A high power cross-field amplifier at X-Band

    International Nuclear Information System (INIS)

    Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

    1991-05-01

    A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs

  9. F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

  10. NASA developments in solid state power amplifiers

    Science.gov (United States)

    Leonard, Regis F.

    1990-01-01

    Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

  11. Spatial Power Combining Amplifier for Ground and Flight Applications

    Science.gov (United States)

    Velazco, J. E.; Taylor, M.

    2016-11-01

    Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

  12. The design study of the high power solid-state amplifier in S-band

    International Nuclear Information System (INIS)

    Tozyo, E.; Kobayashi, K.; Yoshida, K.

    1976-01-01

    We have designed the 500W high power solid-state amplifier for the microwave system of INS electron linac. In this design study the output pulse power level of each module is set as possible as high, so the total number of elements is well reduced within the present microwave technics. In comparison with TWTA highly stabilized and maintenance-free operations are expected with 5 years' MTF. (auth.)

  13. Ka-Band Klystron Amplifier for CUBESATs, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose a Ka-Band klystron amplifier for use in CubeSats. It will operate at 35.7 GHz, have 400 MHz of bandwidth, and output at least 32 watts of saturated power....

  14. A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

    2015-01-01

    A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

  15. Integrated wide-band low-background amplifiers

    International Nuclear Information System (INIS)

    Il'yushchenko, I.I.

    1980-01-01

    Ways of increasing stability and reproduction of characteristics of wide-band integral amplifiers that would to the least extent increase their background noises, are discussed. Considered are some certain flowsheets of integral wide-band amplifiers with low background noise of foreign production which differ from one another by construction of inlet cascades as well as by the applied feedback type. The principal flowsheets of the amplifiers and their main performances are presented. The analysis of the data obtained has revealed that microcircuits made of cascades with a common emitter and local combined feedback are most wide-band among all the considered microcircuits [ru

  16. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

  17. Advances in high-power rf amplifiers

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  18. Two-stage, high power X-band amplifier experiment

    International Nuclear Information System (INIS)

    Kuang, E.; Davis, T.J.; Ivers, J.D.; Kerslick, G.S.; Nation, J.A.; Schaechter, L.

    1993-01-01

    At output powers in excess of 100 MW the authors have noted the development of sidebands in many TWT structures. To address this problem an experiment using a narrow bandwidth, two-stage TWT is in progress. The TWT amplifier consists of a dielectric (e = 5) slow-wave structure, a 30 dB sever section and a 8.8-9.0 GHz passband periodic, metallic structure. The electron beam used in this experiment is a 950 kV, 1 kA, 50 ns pencil beam propagating along an applied axial field of 9 kG. The dielectric first stage has a maximum gain of 30 dB measured at 8.87 GHz, with output powers of up to 50 MW in the TM 01 mode. In these experiments the dielectric amplifier output power is about 3-5 MW and the output power of the complete two-stage device is ∼160 MW at the input frequency. The sidebands detected in earlier experiments have been eliminated. The authors also report measurements of the energy spread of the electron beam resulting from the amplification process. These experimental results are compared with MAGIC code simulations and analytic work they have carried out on such devices

  19. Solid-State Powered X-band Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Mohamed A.K. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Nann, Emilio A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Dolgashev, Valery A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tantawi, Sami [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neilson, Jeff [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2017-03-06

    In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple test cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.

  20. Low-order-mode harmonic multiplying gyrotron traveling-wave amplifier in W band

    International Nuclear Information System (INIS)

    Yeh, Y. S.; Chen, C. H.; Yang, S. J.; Lai, C. H.; Lin, T. Y.; Lo, Y. C.; Hong, J. W.; Hung, C. L.; Chang, T. H.

    2012-01-01

    Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) allow for magnetic field reduction and frequency multiplication. To avoid absolute instabilities, this work proposes a W-band harmonic multiplying gyro-TWA operating at low-order modes. By amplifying a fundamental harmonic TE 11 drive wave, the second harmonic component of the beam current initiates a TE 21 wave to be amplified. Absolute instabilities in the gyro-TWA are suppressed by shortening the interaction circuit and increasing wall losses. Simulation results reveal that compared with Ka-band gyro-TWTs, the lower wall losses effectively suppress absolute instabilities in the W-band gyro-TWA. However, a global reflective oscillation occurs as the wall losses decrease. Increasing the length or resistivity of the lossy section can reduce the feedback of the oscillation to stabilize the amplifier. The W-band harmonic multiplying gyro-TWA is predicted to yield a peak output power of 111 kW at 98 GHz with an efficiency of 25%, a saturated gain of 26 dB, and a bandwidth of 1.6 GHz for a 60 kV, 7.5 A electron beam with an axial velocity spread of 8%.

  1. Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

    Science.gov (United States)

    Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

    2018-02-01

    The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

  2. Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

    2009-01-01

    In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

  3. Design and analysis of a radio frequency extractor in an S-band relativistic klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zehai; Zhang Jun; Shu Ting; Qi Zumin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2012-09-15

    A radio frequency (RF) extractor converts the energy of a strongly modulated intense relativistic electron beam (IREB) into the energy of high power microwave in relativistic klystron amplifier (RKA). In the aim of efficiently extracting the energy of the modulated IREB, a RF extractor with all round coupling structure is proposed. Due to the all round structure, the operating transverse magnetic mode can be established easily and its resonant property can be investigated with an approach of group delay time. Furthermore, the external quality factor can be low enough. The design and analysis of the extractor applied in an S-band RKA are carried out, and the performance of the extractor is validated with three-dimensional (3D) particle-in-cell simulations. The extraction efficiency reaches 27% in the simulation with a totally 3D model of the whole RKA. The primary experiments are also carried out and the results show that the RF extractor with the external quality factor of 7.9 extracted 22% of the beam power and transformed it into the high power microwave. Better results are expected after the parasitic mode between the input and middle cavities is suppressed.

  4. Design and analysis of a radio frequency extractor in an S-band relativistic klystron amplifier

    Science.gov (United States)

    Zhang, Zehai; Zhang, Jun; Shu, Ting; Qi, Zumin

    2012-09-01

    A radio frequency (RF) extractor converts the energy of a strongly modulated intense relativistic electron beam (IREB) into the energy of high power microwave in relativistic klystron amplifier (RKA). In the aim of efficiently extracting the energy of the modulated IREB, a RF extractor with all round coupling structure is proposed. Due to the all round structure, the operating transverse magnetic mode can be established easily and its resonant property can be investigated with an approach of group delay time. Furthermore, the external quality factor can be low enough. The design and analysis of the extractor applied in an S-band RKA are carried out, and the performance of the extractor is validated with three-dimensional (3D) particle-in-cell simulations. The extraction efficiency reaches 27% in the simulation with a totally 3D model of the whole RKA. The primary experiments are also carried out and the results show that the RF extractor with the external quality factor of 7.9 extracted 22% of the beam power and transformed it into the high power microwave. Better results are expected after the parasitic mode between the input and middle cavities is suppressed.

  5. Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Harun, S.W.; Ahmad, H.

    2004-01-01

    Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

  6. A high efficiency Ku-band radial line relativistic klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang; Zhang, Jun; Ju, Jinchuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2016-07-15

    To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a high power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.

  7. A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance

    Directory of Open Access Journals (Sweden)

    Wa Kong

    2018-01-01

    Full Text Available A symmetric Doherty power amplifier (DPA based on integrated enhancing reactance (IER was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

  8. Mode control in a high gain relativistic klystron amplifier with 3 GW output power

    Science.gov (United States)

    Wu, Yang; Xie, Hong-Quan; Xu, Zhou

    2014-01-01

    Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

  9. Large power microwave nonlinear effects on multifunction amplifier chip for Ka-band T/R module of phased array radar

    Science.gov (United States)

    Guo, Guo; Gu, Ling; Wu, Ruowu; Xu, Xiong; Zhou, Taifu; Niu, Xinjian; Liu, Yinghui; Wang, Hui; Wei, Yanyu; Guo, Changyong

    2017-12-01

    Nonlinear effects of large power millimeter wave on critical chips for the T/R module of phased array radar is experimental studied and analyzed in this paper. A multifunction amplifier chip is selected for our experiments. A solid continuous wave (CW) source and a large power pulsed magnetron are both employed to generate the Ka-band microwave. The input-output characteristics, the degradation and destroy threshold of the chips are obtained through a series of experimental tests. At last, the results are given by figures and analyzed theoretically.

  10. Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2013-11-15

    An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

  11. Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

    Science.gov (United States)

    Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

    2013-11-01

    An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

  12. Antares laser power amplifier

    International Nuclear Information System (INIS)

    Stine, R.D.; Ross, G.F.; Silvernail, C.

    1979-01-01

    The overall design of the Antares laser power amplifier is discussed. The power amplifier is the last stage of amplification in the 100-kJ Antares laser. In the power amplifier a single, cylindrical, grid-controlle, cold-cathode electron gun is surrounded by 12 large-aperture CO 2 electron-beam sustained laser discharge sectors. Each power amplifier will deliver 18 kJ and the six modules used in Antares will produce the required 100 kJ for delivery to the target. A large-scale interaction between optical, mechanical, and electrical disciplines is required to meet the design objectives. Significant component advances required by the power amplifier design are discussed

  13. An 8–18 GHz broadband high power amplifier

    International Nuclear Information System (INIS)

    Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

    2011-01-01

    An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

  14. Photonic-band-gap gyrotron amplifier with picosecond pulses

    Science.gov (United States)

    Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

    2017-12-01

    We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

  15. Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

    KAUST Repository

    Ali, Anum Z.

    2013-12-01

    Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

  16. Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

    KAUST Repository

    Ali, Anum Z.; Hammi, Oualid; Al-Naffouri, Tareq Y.

    2013-01-01

    Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

  17. A Low-Power CMOS Trans-Impedance Amplifier for 2.5 Gb/S Optical Communication Systems

    Directory of Open Access Journals (Sweden)

    Mojgan Mohseni

    2013-01-01

    Full Text Available This Paper presents a new Trans-impedance amplifier for optical receiver circuits. The amplifier is based on parallel (R-C feedback topology which is optimized for power consumption and uses shunt-peaking technique to enhance the frequency bandwidth of the amplifier. However, the circuit is designed and simulated using 0.18µm CMOS technology parameters. As simulation results show, the amplifier has a gain of 67.5dBΩ, bandwidth of 3GHz while consumes only 12.16 mW power which shows a very good performance for using in a 2.5Gb/S (SONET OC-48 optical communication system. Finally, as the simulated Eye-Diagram shows, the circuit has a very good performance for a 2.5Gb/S system for a 10µA input current.

  18. High-power test of S-band klystron for long-pulse operation

    International Nuclear Information System (INIS)

    Morii, Y.; Oshita, E.; Abe, S.; Keishi, T.; Tomimasu, T.; Ohkubo, Y.; Yoshinao, M.; Yonezawa, H.

    1994-01-01

    FELI(Free Electron Laser Research Institute, Inc.) is constructing a free electron laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using an S-band linac. The linac is commissioning now. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) of the FELI linac are operated in three pulse operation modes (pulse width and peak RF power; 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW). The S-band klystron and its modulator were combined to test their performance. The high power test results of the S-band klystron are summarized in this paper. (author)

  19. Millimeter-wave power amplifiers

    CERN Document Server

    du Preez, Jaco

    2017-01-01

    This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

  20. A broadband high-efficiency Doherty power amplifier using symmetrical devices

    Science.gov (United States)

    Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

    2018-04-01

    This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

  1. Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

    Energy Technology Data Exchange (ETDEWEB)

    Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

    1960-07-01

    A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

  2. A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

    Directory of Open Access Journals (Sweden)

    Shichang Chen

    2018-01-01

    Full Text Available This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.

  3. High Efficiency GPS Block III L1 band Envelope Tracking Power Amplifier

    Science.gov (United States)

    2016-03-31

    intermo asymmetric ri nction and is d 30.69MHz w measured with pe Amplifier e CGH40120F Sub-System: F e RFPA and E Fig. 7: Nati The switcher the...Paul T. The Efficiency W ack Power Am Dongsu Ki Bumman, "Hi lator for Enve ess Componen Hassan, M. ing power-sup z LTE Envelop ts Conference

  4. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  5. Very broad bandwidth klystron amplifiers

    Science.gov (United States)

    Faillon, G.; Egloff, G.; Farvet, C.

    Large surveillance radars use transmitters at peak power levels of around one MW and average levels of a few kW, and possibly several tens of kW, in S band, or even C band. In general, the amplification stage of these transmitters is a microwave power tube, frequently a klystron. Although designers often turn to klystrons because of their good peak and average power capabilities, they still see them as narrow band amplifiers, undoubtedly because of their resonant cavities which, at first sight, would seem highly selective. But, with the progress of recent years, it has now become quite feasible to use these tubes in installations requiring bandwidths in excess of 10 - 12 percent, and even 15 percent, at 1 MW peak for example, in S-band.

  6. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    International Nuclear Information System (INIS)

    2005-01-01

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  7. Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

    NARCIS (Netherlands)

    Acar, M.

    2011-01-01

    In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

  8. High Peak Power Test and Evaluation of S-band Waveguide Switches

    Science.gov (United States)

    Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

    1997-05-01

    The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

  9. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Bai Xianchen; Zhang Jiande; Yang Jianhua; Jin Zhenxing [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-12-15

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.

  10. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Science.gov (United States)

    Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

    2012-12-01

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

  11. Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

    Science.gov (United States)

    Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard

    2012-01-01

    Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to

  12. High power klystrons for efficient reliable high power amplifiers

    Science.gov (United States)

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  13. Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

    Science.gov (United States)

    Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.; hide

    2011-01-01

    Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

  14. C.A.D for broad-band multistage microwave transimpedance amplifier.

    OpenAIRE

    Olomo Ngongo, A.; Perennec, A.; Soares, R.; Jarry, P.

    1992-01-01

    In high data rate optical-fiber, it is necessary to employ an ultra broad-band transimpedance amplifier. In this paper, we present a technique for the design of a transimpedance amplifiers. It can be applied as well to the design of interstage equalizers for microwave transimpedance amplifiers. In the version described in this paper, the optimisation process is applied to the transimpedance gain and noise which is adjusted. Based on the load charge matching technique, a sequential procedure t...

  15. 2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

    Directory of Open Access Journals (Sweden)

    M. Dirix

    2009-01-01

    Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

  16. RF extraction issues in the relativistic klystron amplifiers

    Science.gov (United States)

    Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

    1994-05-01

    Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

  17. The design of a 4’th order Bandpass Butterworth filter with one operational amplifier.

    OpenAIRE

    Gaunholt, Hans

    2008-01-01

    A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, y...

  18. Improvement of out-of-band Behaviour in Switch-Mode Amplifiers and Power Supplies by their Modulation Topology

    DEFF Research Database (Denmark)

    Knott, Arnold

    2010-01-01

    Switch-mode power electronics is disturbing other electronic circuits by emission of electromagnetic waves and signals. To allow transmission of information, a set of regulatory rules (electromagnetic compatibility (EMC)) were created to limit this disturbance. To fulfill those rules in power...... electronics, shielding and filtering is required, which is limiting the size reduction. The motivation for this project was to find alternative ways to avoid trouble with interference of switch-mode power electronics and transmission and receiver circuits. An especial focus is given to audio power amplifiers....... After a historical overview and description of interaction between power electronics and electromagnetic compatibility (chapter 1), the thesis will first show the impact of the high frequency signals on the audio performance of switch-mode audio power amplifiers (chapter 2). Therefore the work of others...

  19. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    Energy Technology Data Exchange (ETDEWEB)

    Gaspar, M., E-mail: marcos.gaspar@psi.c [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Pedrozzi, M. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Ferreira, L.F.R. [Department of Physics, University of Coimbra, 3004-516 Coimbra (Portugal); Garvey, T. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland)

    2011-05-01

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  20. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    International Nuclear Information System (INIS)

    Gaspar, M.; Pedrozzi, M.; Ferreira, L.F.R.; Garvey, T.

    2011-01-01

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  1. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  2. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    International Nuclear Information System (INIS)

    Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

    2016-01-01

    Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

  3. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2016-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

  4. Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications

    Science.gov (United States)

    Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

    2014-01-01

    For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA’s power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics. PMID:25033049

  5. Design of a high power cross field amplifier at X band with an internally coupled waveguide

    International Nuclear Information System (INIS)

    Eppley, K.; Ko, Kwok.

    1991-01-01

    Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. We have developed a simulation model for CFAs using the PIC code CONDOR. Our simulations indicate that there are limits to the maximum RF field strength that a CEA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube. CONDOR simulations have identified a good operating point at X band, with power generation of over 5 MW per cm and total efficiency of over 60 percent. ARGUS simulations have modelled the cold test properties of the coupled structure. The nominal design specifications are 300 MW output, 17 db gain, frequency 11.4 GHz, dc voltage 142 kV, magnetic field 5 kG, anode cathode gap 3.6 mm, total interaction length about 60 cm. We will discuss the results of code simulations and report on the status of the experimental effort

  6. A low-power RF system with accurate synchronization for a S-band RF-gun using a laser-triggered photocathode

    International Nuclear Information System (INIS)

    Otake, Y.; Naito, T.; Shintake, T.; Takata, K.; Takeuchi, Y.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

    1992-01-01

    An S-band RF-gun using a laser-triggered photocathode and its low-power RF system have been constructed. The main elements of the low-power RF system comprise a 600-W amplifier, an amplitude modulator, a phase detector, a phase shifter and a frequency-divider module. Synchronization between the RF fields for acceleration and the mode-locked laser pulses for beam triggering are among the important points concerning the RF-gun. The frequency divider module which down-converts from 2856 MHz(RF) to 89.25 MHz(laser), and the electrical phase-shifter were specially developed for stable phase control. The phase jitter of the frequency divider should be less than 10 ps to satisfy our present requirements. The first experiments to trigger and accelerate beams with the above-mentioned system were carried out in January, 1992. (Author) 6 figs., 5 refs

  7. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  8. A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

    Science.gov (United States)

    Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

    2014-01-01

    This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

  9. Dynamic Characteristics of S-band DC SQUID Amplifier

    DEFF Research Database (Denmark)

    Prokopenko, G. V.; Shitov, S. V.; Koshelets, I. L. L. V. P.

    2003-01-01

    A low-noise rf amplifier based on a de SQUID (SQA) has been tested in the frequency range 3.0-4.6 GHz in the open-loop configuration. The following parameters have been measured for the single-stage balanced type SQA at 4.0 GHz: gain (12 +/- 1) dB, 3 dB bandwidth of 500 MHz and noise temperature (1.......0 +/- 0.25) K. For the nonbalanced type SQA at 4.0 GHz gain was (15 +/-1) dB, 3 dB bandwidth 200 MHz and noise temperature (0.5 +/- 0.25) K. The improved performance is obtained due to the increased characteristic voltage (approximate to 420 muV) of the small-area (down to 0.7-0.9 mum(2)) high-quality Nb......-AlOx-Nb SIS junctions. The saturation power (normalized to 1 GHz) referred to the input at 1 dB gain compression is estimated as approximate to55 K*GHz at a bias voltage of 60 muV. The reasons for saturation of the SQA are discussed....

  10. IHEP S-band 45 MW pulse power klystron development

    International Nuclear Information System (INIS)

    Dong Dong; Zhou Zusheng; Zhang Liang; Li Gangying; Tian Shuangmin

    2006-01-01

    S-band 45 MW pulse power klystron has been developed in the Institute of High Energy Physics (IHEP) for the Beijing Electron Positron Collider (BEPC) upgrade projects (BEPC-II). This new klystron has 5 cavities in its RF-beam interaction and single RF output window, and the RF output power is 45 MW at 310 kV, the gain is 50 dB, the efficiency 40%. The manufacturing, training and testing of a prototype klystron has been finished in IHEP and RF power 45 MW at 300 kV has been reached. The testing results show that all the parameters of the 45 MW klystron reach the design goal. (authors)

  11. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s-1 directly modulated lasers and 40 Gb s-1 signal-regenerative amplifiers

    International Nuclear Information System (INIS)

    Sugawara, M; Hatori, N; Ishida, M; Ebe, H; Arakawa, Y; Akiyama, T; Otsubo, K; Yamamoto, T; Nakata, Y

    2005-01-01

    This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots in the active region for optical telecommunication. Based on our design in terms of the maximum bandwidth for high-speed modulation and p-type doping in quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb s -1 laser diodes on a GaAs substrate at 1.3 μm. The output waveform at 10 Gb s -1 maintained a clear eye opening, average output power and extinction ratio without current adjustments from 20 deg. C to 70 deg. C. We developed ultrawide-band high-power amplifiers in the 1.5 μm wavelength region on an InP substrate. The amplifier showed ultrafast gain response under gain saturation, and enabled signal regeneration at 40 Gb s -1 by suppressing the '1'-level noise due to the beating between the signal and amplified spontaneous emission. We present our amplifier module with polarization diversity to enable a stable polarization-insensitive performance, and also, discuss prospects for polarization-insensitive quantum dots by the close stacking technique

  12. Utilization of a Vircator to drive a High Power Relativistic Klystron Amplifier

    Science.gov (United States)

    Gardelle, J.; Bardy, J.; Cassany, B.; Desanlis, T.; Eyl, P.; Galtié, A.; Modin, P.; Voisin, L.; Balleyguier, P.; Gouard, P.; Donohue, J.

    2002-11-01

    At CESTA, we have been producing electron beams for some fifteen years by using induction accelerators and pulse diodes. First we had performed Frre-Electron Lasers experiments and we are currently studying the production of High-Power microwaves in the S-band. Among the possible sources we have chosen to perform Relativistic Klystron (RK) experiments with a pulse diode capable of generating a 700kV, 15 kA, 100 ns annular electron beam. In an amplifier configuration, we are testing the idea of using a Vircator as the driver for the first cavity of the klystron. This Vircator uses a simple electrical generator (Marx capacitor bank) which operates in the S-band in the GW class. By reducing the power level to about 100 MW, a 200 ns reliable and reproducible input driver pulse is obtained. First, we present the results of a preliminary experiment for which a coaxial cavity has been built in order to be fed by the Vircator emission at 2.45 GHz. Secondly, we give the experimental results in an oscillator configuration which corresponds to the fisrt step of our RK studies. Comparisons with the results of numerical simulations performed with MAGIC and MAFIA will be given for both experiments.

  13. W-band InP based HEMT MMIC low noise amplifiers

    Science.gov (United States)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  14. Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

    Science.gov (United States)

    Simons, Rainee N.; Chevalier, Christine T.; Wintucky, Edwin G.; Freeman, Jon C.

    2010-01-01

    The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary

  15. Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

    Science.gov (United States)

    Suganthi, K.; Malarvizhi, S.

    2018-03-01

    A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

  16. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  17. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    Science.gov (United States)

    Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

    2012-08-01

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  18. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    Energy Technology Data Exchange (ETDEWEB)

    Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-08-15

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  19. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    International Nuclear Information System (INIS)

    Bai Xianchen; Yang Jianhua; Zhang Jiande

    2012-01-01

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  20. GaN-based Power amplifiers for microwave applications

    Directory of Open Access Journals (Sweden)

    Jorge Julián Moreno-Rubio

    2016-01-01

    Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

  1. Distributed feedback multimode Brillouin–Raman random fiber laser in the S-band

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Jemangin, M H; Harun, S W

    2013-01-01

    A novel S-band multimode Brillouin–Raman random fiber laser based on distributed feedback of Rayleigh scattered light is demonstrated. It relies on a short length, 7.7 km long angle-cleaved dispersion compensating fiber in a mirror-less open cavity. Two 1425 nm laser diodes at a modest operating power amplify a Brillouin pump (BP) signal, which in turn generates a multi-wavelength laser output through the stimulated Brillouin scattering. Eleven Brillouin Stokes lines, spanning from 1515.15 to 1516.00 nm, were obtained at a Raman pump power of 361.66 mW. Out of these, five odd Brillouin Stokes lines were generated with a flat peak power of about 0 dBm. (letter)

  2. Low-noise wide-band amplifiers for stochastic beam cooling experiments

    International Nuclear Information System (INIS)

    Leskovar, B.; Lo, C.C.

    1982-01-01

    Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

  3. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Kang Chunlei; Shi Jia; Zhang Xuguang; Ai Baoli; Liu Yi

    2013-01-01

    A three-stage 4.8–6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a ∼31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal. (semiconductor integrated circuits)

  4. Demonstration of Multi-Gbps Data Rates at Ka-Band Using Software-Defined Modem and Broadband High Power Amplifier for Space Communications

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Landon, David G.; Sun, Jun Y.; Winn, James S.; Laraway, Stephen; McIntire, William K.; Metz, John L.; Smith, Francis J.

    2011-01-01

    The paper presents the first ever research and experimental results regarding the combination of a software-defined multi-Gbps modem and a broadband high power space amplifier when tested with an extended form of the industry standard DVB-S2 and LDPC rate 9/10 FEC codec. The modem supports waveforms including QPSK, 8-PSK, 16-APSK, 32-APSK, 64-APSK, and 128-QAM. The broadband high power amplifier is a space qualified traveling-wave tube (TWT), which has a passband greater than 3 GHz at 33 GHz, output power of 200 W and efficiency greater than 60 percent. The modem and the TWTA together enabled an unprecedented data rate at 20 Gbps with low BER of 10(exp -9). The presented results include a plot of the received waveform constellation, BER vs. E(sub b)/N(sub 0) and implementation loss for each of the modulation types tested. The above results when included in an RF link budget analysis show that NASA s payload data rate can be increased by at least an order of magnitude (greater than 10X) over current state-of-practice, limited only by the spacecraft EIRP, ground receiver G/T, range, and available spectrum or bandwidth.

  5. 94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology

    NARCIS (Netherlands)

    Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.

    2012-01-01

    Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications

  6. A Carbon Nanotube-based NEMS Parametric Amplifier for Enhanced Radio Wave Detection and Electronic Signal Amplification

    Energy Technology Data Exchange (ETDEWEB)

    Aleman, B J; Sussman, A; Zettl, A [Physics Department, University of California, Berkeley, CA 94720 (United States); Mickelson, W, E-mail: azettl@berkeley.edu [Center of Integrated Nanomechanical Systems, University of California, Berkeley, CA 94720 (United States)

    2011-07-20

    We propose a scheme for a parametric amplifier based on a single suspended carbon nanotube field-emitter. This novel electromechanical nanotube device acts as a phase-sensitive, variable-gain, band-pass-filtering amplifier for electronic signal processing and, at the same time, can operate as a variable-sensitivity, tuneable detector and transducer of radio frequency electromagnetic waves. The amplifier can exhibit infinite gain at pumping voltages much less than 10 Volts. Additionally, the amplifier's low overhead power consumption (10-1000 nW) make it exceptionally attractive for ultra-low-power applications.

  7. Modeling and design techniques for RF power amplifiers

    CERN Document Server

    Raghavan, Arvind; Laskar, Joy

    2008-01-01

    The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

  8. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

    NARCIS (Netherlands)

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In

  9. Design And Construction Of 300W Audio Power Amplifier For Classroom

    Directory of Open Access Journals (Sweden)

    Shune Lei Aung

    2015-07-01

    Full Text Available Abstract This paper describes the design and construction of 300W audio power amplifier for classroom. In the construction of this amplifier microphone preamplifier tone preamplifier equalizer line amplifier output power amplifier and sound level indicator are included. The output power amplifier is designed as O.C.L system and constructed by using Class B among many types of amplifier classes. There are two types in O.C.L system quasi system and complementary system. Between them the complementary system is used in the construction of 300W audio power amplifier. The Multisim software is utilized for the construction of audio power amplifier.

  10. A high-power two stage traveling-wave tube amplifier

    International Nuclear Information System (INIS)

    Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

    1991-01-01

    Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

  11. Multilevel tracking power supply for switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Iversen, Niels Elkjær; Lazarevic, Vladan; Vasic, Miroslav

    2018-01-01

    to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured results show that systems employing envelope tracking can improve system efficiency from 2% to 12%, i.e. a factor of 6. The temperature rise is strongly reduced, especially for the switching power MOSFETs where......Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques...

  12. Thermal effects in high average power optical parametric amplifiers.

    Science.gov (United States)

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

  13. High Efficiency Traveling-Wave Tube Power Amplifier for Ka-Band Software Defined Radio on International Space Station-A Platform for Communications Technology Development

    Science.gov (United States)

    Simons, Rainee N.; Force, Dale A.; Kacpura, Thomas J.

    2013-01-01

    The design, fabrication and RF performance of the output traveling-wave tube amplifier (TWTA) for a space based Ka-band software defined radio (SDR) is presented. The TWTA, the SDR and the supporting avionics are integrated to forms a testbed, which is currently located on an exterior truss of the International Space Station (ISS). The SDR in the testbed communicates at Ka-band frequencies through a high-gain antenna directed to NASA s Tracking and Data Relay Satellite System (TDRSS), which communicates to the ground station located at White Sands Complex. The application of the testbed is for demonstrating new waveforms and software designed to enhance data delivery from scientific spacecraft and, the waveforms and software can be upgraded and reconfigured from the ground. The construction and the salient features of the Ka-band SDR are discussed. The testbed is currently undergoing on-orbit checkout and commissioning and is expected to operate for 3 to 5 years in space.

  14. Self-oscillating modulators for direct energy conversion audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and simulated waveforms of a prototype amplifier are presented. (au)

  15. Using MEMS Capacitive Switches in Tunable RF Amplifiers

    Directory of Open Access Journals (Sweden)

    Danson John

    2006-01-01

    Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

  16. Using MEMS Capacitive Switches in Tunable RF Amplifiers

    OpenAIRE

    Danson John; Plett Calvin; Tait Niall

    2006-01-01

    A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

  17. Introduction to RF power amplifier design and simulation

    CERN Document Server

    Eroglu, Abdullah

    2015-01-01

    Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

  18. Embedded control system for high power RF amplifiers

    International Nuclear Information System (INIS)

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  19. 47 CFR 2.815 - External radio frequency power amplifiers.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2... AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815 External radio frequency power amplifiers. (a) As used in this part, an external radio frequency power...

  20. A high-power compact regenerative amplifier FEL

    International Nuclear Information System (INIS)

    Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

    1997-01-01

    The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

  1. Analysis and evaluation of the power amplifier device

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

    2011-11-15

    We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

  2. Wideband multi-element Er-doped fiber amplifier

    International Nuclear Information System (INIS)

    Thipparapu, N K; Jain, S; May-Smith, T C; Sahu, J K

    2014-01-01

    A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB. (letter)

  3. Performance Enhancement in L-Band Edfa Through Dual Stage Technique

    Directory of Open Access Journals (Sweden)

    S. W. Harun and H. Ahmad

    2012-10-01

    Full Text Available An experiment on gain enhancement in the long wavelength band erbium doped fiber amplifier (L-band EDFA is demonstrated. It uses a dual stage technique with dual forward pumping scheme. Compared to a conventional single stage amplifier, the small signal gain for 1580nm signal can be improved by 5.5dB without paying much noise figure penalty. The corresponding noise figure penalty was 0.3dB due to the insertion loss of the optical isolator. The optimum pump power ratio for the first pump is experimentally determined to be 33%. The maximum gain improvement of 8.3dB was obtained at a signal wavelength of 1568nm while signal and total pump powers were fixed at -30dBm and 92mW, respectively. The employment of dual stage amplifier system seems to play an important role in the development of practical L-band EDFA from the perspective of economical usage of pump power.Key Words:  erbium doped fibre; optical amplifier; L-band EDFA; dual stage EDFA; amplified spontaneous emission

  4. Empirical multichannel power consumption model for erbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

    2015-01-01

    In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

  5. A high efficiency PWM CMOS class-D audio power amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Zhangming; Liu Lianxi; Yang Yintang [Institute of Microelectronics, Xidian University, Xi' an 710071 (China); Lei Han, E-mail: zmyh@263.ne [Xi' an Power-Rail Micro Co., Ltd, Xi' an 710075 (China)

    2009-02-15

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 mum CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 muA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm{sup 2}. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  6. A high efficiency PWM CMOS class-D audio power amplifier

    International Nuclear Information System (INIS)

    Zhu Zhangming; Liu Lianxi; Yang Yintang; Lei Han

    2009-01-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm 2 . With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  7. A high efficiency PWM CMOS class-D audio power amplifier

    Science.gov (United States)

    Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

    2009-02-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  8. Current-Driven Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

    2012-01-01

    The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

  9. Self-oscillating modulators for direct energy conversion audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating...

  10. Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

    Science.gov (United States)

    2017-03-01

    QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

  11. High peak power picosecond hybrid fiber and solid-state amplifier system

    International Nuclear Information System (INIS)

    Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

    2010-01-01

    We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

  12. A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

    Science.gov (United States)

    Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

    2017-12-01

    To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

  13. Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

    Directory of Open Access Journals (Sweden)

    Eswaran Uthirajoo

    Full Text Available For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC power amplifier (PA is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR and error vector magnitude (EVM specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

  14. Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

    Science.gov (United States)

    Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

    2014-01-01

    For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

  15. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  16. Wide-band CMOS low-noise amplifier exploiting thermal noise canceling

    OpenAIRE

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    2004-01-01

    Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching d...

  17. Class H power amplifier for power saving in fluxgate current transducers

    OpenAIRE

    Velasco Quesada, Guillermo; Román Lumbreras, Manuel; Pérez Delgado, Raul; Conesa Roca, Alfons

    2016-01-01

    This paper presents a new improvement in the design of a fluxgate-based current transducer in order to reduce the power consumption of control electronics. The proposed improvement involves the replacement of the output linear amplifier of the transducer by a class H amplifier. The output amplifier is devoted to the magnetic flux compensation and generates the transducer output current, which is proportional to the current to be measured. In this way, it is possible to reduce significantly th...

  18. Performance of high power S-band klystrons focused with permanent magnet

    International Nuclear Information System (INIS)

    Fukuda, S.; Shidara, T.; Saito, Y.; Hanaki, H.; Nakao, K.; Homma, H.; Anami, S.; Tanaka, J.

    1987-02-01

    Performance of high power S-band klystrons focused with permanent magnet is presented. The axial magnetic field distribution and the transverse magnetic field play an important role in the tube performance. Effects of the reversal field in the collector and the cathode-anode region are discussed precisely. It is also shown that the tube efficiency is strongly affected with the residual transverse magnetic field. The allowable transverse field is less than 0.3 % of the longitudinal field in the entire rf interaction region of the klystron. (author)

  19. Performance of high power S-band klystrons focused with permanent magnet

    Science.gov (United States)

    Fukuda, S.; Shidara, T.; Saito, Y.; Hanaki, H.; Nakao, K.; Homma, H.; Anami, S.; Tanaka, J.

    1987-02-01

    Performance of high power S-band klystrons focused with permanent magnet is presented. The axial magnetic field distribution and the transverse magnetic field play an important role in the tube performance. Effects of the reversal field in the collector and the cathode-anode region are discussed precisely. It is also shown that the tube efficiency is strongly affected with the residual transverse magnetic field. The allowable transverse field is less than 0.3 percent of the longitudinal field in the entire RF interaction region of the klystron.

  20. PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, K.; Limiti, E.; Paoloni, C.

    2013-01-01

    A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...

  1. Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

    DEFF Research Database (Denmark)

    Moradi, Farshad

    A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

  2. A real-time control system architecture for industrial power amplifiers

    NARCIS (Netherlands)

    Qureshi, F.; Spinu, V.; Wijnands, C.G.E.; Lazar, M.

    2013-01-01

    Power amplifiers are a highly important component in a range of industrial applications, such as, servo-drives, magnetic resonance imaging, energy systems, and audio. The control system for power amplifiers should satisfy a range of requirements, e.g., offset free tracking, stability margins, and

  3. High-power piezo drive amplifier for large stack and PFC applications

    Science.gov (United States)

    Clingman, Dan J.; Gamble, Mike

    2001-08-01

    This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

  4. Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

    Science.gov (United States)

    Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

    2016-04-25

    Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. X-band RF power sources for accelerator applications

    International Nuclear Information System (INIS)

    Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

    2011-01-01

    The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

  6. Mode control in a high-gain relativistic klystron amplifier

    Science.gov (United States)

    Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

    2010-05-01

    Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

  7. Bandwidth tunable amplifier for recording biopotential signals.

    Science.gov (United States)

    Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

    2010-01-01

    This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

  8. Spectrum Band Selection in Delay-QoS Constrained Cognitive Radio Networks

    KAUST Repository

    Yang, Yuli

    2014-01-01

    In this paper, a cognitive radio (CR) network with multiple spectrum bands available for secondary users (SUs) is considered. For the SU\\'s active spectrum-band selection, two criteria are developed. One is to select the band with the highest secondary channel power gain, and the other is to select the band with the lowest interference channel power gain to primary users (PUs). With the quality-of-service (QoS) requirement concerning delay, the effective capacity (EC) behaviors over secondary links are investigated for both criteria under two spectrum-sharing constraints. To begin by presenting full benefits in these criteria, the constraint imposed on the secondary transmitter (ST) is the average interference limitation to PUs only. Furthermore, taking into account the ST\\'s battery/energy budget, the ST is imposed by joint constraints on its average interference to PUs, as well as on its own average transmit power. For either constraint, we formulate the ST\\'s optimal transmit power allocation to maximize the SU\\'s EC with both band-selection criteria and, correspondingly, obtain the secondary\\'s power allocation and maximum EC in closed forms. Numerical results demonstrated subsequently substantiate the validity of our derivations and provide a powerful tool for the spectrum-band selection in CR networks with multiple bands available. © 1967-2012 IEEE.

  9. Design of a high power cross field amplifier at X band with an internally coupled waveguide

    International Nuclear Information System (INIS)

    Eppley, K.; Ko, K.

    1991-01-01

    This paper reports that cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. The authors have developed a simulation model for CFAs using the PIC code CONDOR. The authors simulations indicate that there are limits to the maximum RF field strength that a CFA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube

  10. Audio power amplifier design handbook

    CERN Document Server

    Self, Douglas

    2013-01-01

    This book is essential for audio power amplifier designers and engineers for one simple reason...it enables you as a professional to develop reliable, high-performance circuits. The Author Douglas Self covers the major issues of distortion and linearity, power supplies, overload, DC-protection and reactive loading. He also tackles unusual forms of compensation and distortion produced by capacitors and fuses. This completely updated fifth edition includes four NEW chapters including one on The XD Principle, invented by the author, and used by Cambridge Audio. Cro

  11. High efficiency class-I audio power amplifier using a single adaptive supply

    International Nuclear Information System (INIS)

    Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

    2012-01-01

    A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

  12. Gyrocon: a deflection-modulated, high-power microwave amplifier

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1977-10-01

    A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

  13. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  14. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

  15. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  16. High power pulsed sources based on fiber amplifiers

    Science.gov (United States)

    Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

    2017-11-01

    Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

  17. Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

    Science.gov (United States)

    Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

    2014-03-15

    Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

  18. A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

  19. Development of new S-band RF window for stable high-power operation in linear accelerator RF system

    Science.gov (United States)

    Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

    2017-09-01

    For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

  20. Systematic Design of a Transimpedance Amplifier With Specified Electromagnetic Out-of-Band Interference Behavior

    NARCIS (Netherlands)

    van der Horst, Marcel J.; Linnenbank, Andre C.; Serdijn, Wouter A.; Long, John R.

    2010-01-01

    In negative-feedback amplifier design, electromagnetic interference (EMI) behavior is usually completely disregarded. EMI can, e.g., result in detection of low-frequency envelope variations of the usually high-frequency interfering signals. If the detected signals end up in the pass band of the

  1. A low-power current-reuse dual-band analog front-end for multi-channel neural signal recording.

    Science.gov (United States)

    Sepehrian, H; Gosselin, B

    2014-01-01

    Thoroughly studying the brain activity of freely moving subjects requires miniature data acquisition systems to measure and wirelessly transmit neural signals in real time. In this application, it is mandatory to simultaneously record the bioelectrical activity of a large number of neurons to gain a better knowledge of brain functions. However, due to limitations in transferring the entire raw data to a remote base station, employing dedicated data reduction techniques to extract the relevant part of neural signals is critical to decrease the amount of data to transfer. In this work, we present a new dual-band neural amplifier to separate the neuronal spike signals (SPK) and the local field potential (LFP) simultaneously in the analog domain, immediately after the pre-amplification stage. By separating these two bands right after the pre-amplification stage, it is possible to process LFP and SPK separately. As a result, the required dynamic range of the entire channel, which is determined by the signal-to-noise ratio of the SPK signal of larger bandwidth, can be relaxed. In this design, a new current-reuse low-power low-noise amplifier and a new dual-band filter that separates SPK and LFP while saving capacitors and pseudo resistors. A four-channel dual-band (SPK, LFP) analog front-end capable of simultaneously separating SPK and LFP is implemented in a TSMC 0.18 μm technology. Simulation results present a total power consumption per channel of 3.1 μw for an input referred noise of 3.28 μV and a NEF for 2.07. The cutoff frequency of the LFP band is fc=280 Hz, and fL=725 Hz and fL=11.2 KHz for SPK, with 36 dB gain for LFP band 46 dB gain for SPK band.

  2. Switching-mode Audio Power Amplifiers with Direct Energy Conversion

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    has been replaced with a high frequency AC link. When compared to the conventional Class D amplifiers with a separate DC power supply, the proposed single conversion stage amplifier provides simple and compact solution with better efficiency and higher level of integration, leading to reduced...

  3. Perancangan Low Noise Amplifier dengan Teknik Non Simultaneous Conjugate Match untuk Aplikasi Radar S-Band

    Directory of Open Access Journals (Sweden)

    Yana Taryana

    2016-06-01

    Full Text Available Radar merupakan sistem pemancar dan penerima gelombang elektromagnetik untuk mendeteksi, mengukur jarak dan membuat peta benda benda seperti pesawat terbang, kapal laut, kendaran bermotor dan informasi cuaca. Salah satu kendala yang dihadapi pada sistem radar adalah sinyal pantulan yang memiliki daya yang rendah sehingga kualitas penerimaan menjadi kurang baik. Untuk mengatasi kendala tersebut dibutuhkan penguat daya pada sistem penerima yaitu Low Noise Amplifier (LNA. Oleh karena itu, tulisan ini memaparkan perancangan LNA dengan menggunakan teknik Non Simultaneous Conjugate Match (NSCM untuk aplikasi radar S-Band. Teknik ini memberikan kemudahan dalam menentukan nilai trade off (TO untuk nilai gain, noise figure (NF dan Voltage Standing Wave Ratio (VSWR yang diinginkan. Dalam proses perancangannya, perangkat lunak Agilent Design System (ADS 2011 digunakan untuk mendapatkan hubungan antara lingkaran gain, lingkaran NF, lingkaran VSWR, dan lingkaran mismatch factor (M. Dari hubungan tersebut diperoleh nilai impedansi masukan dan keluaran dari komponen aktif. Dalam tulisan ini, LNA dirancang dua tingkat untuk mendapatkan penguatan yang tinggi. Masing-masing tingkat menggunakan komponen aktif BJT BFP420 dengan penguatan dirancang sebesar 13,50 dB untuk tingkat pertama dan kedua, dan M sebesar 0,98. Sedangkan untuk saluran penyesuai impedansinya menggunakan substrat teflon fiberglass DiClad527. Hasil simulasi menunjukkan karakteristik LNA pada frekuensi 3 GHz yaitu gain sebesar 28,80 dB, NF sebesar 2,80 dB, VSWRin sebesar 1,05 dan VSWRout sebesar 1,1.

  4. A high peak power S-band switching system for the Advanced Photon Source (APS) Linear Accelerator (Linac)

    International Nuclear Information System (INIS)

    Grelick, A. E.

    1998-01-01

    An S-band linear accelerator is the source of particles and front end of the Advanced Photon Source [1] injector. Additionally, it will be used to support a low-energy undulator test line (LEUTL) and to drive a free-electron laser (FEL). To provide maximum linac availability for all uses, an additional modulator-klystron subsystem has been built,and a waveguide-switching and distribution subsystem is now under construction. The combined subsystems provide a hot spare for any of the five S-band transmitters that power the lina cand have been given the additional function of powering an rf gun test stand whenever they are not otherwise needed. Design considerations for the waveguide-switching subsystem, topology selection, timing, control, and system protection provisions are described

  5. Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

    Science.gov (United States)

    Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

    2017-01-01

    WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

  6. ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

    International Nuclear Information System (INIS)

    Nelson, Brian A.

    2006-01-01

    Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

  7. Measurement of Solid-State Optical Refrigeration by Two-Band Differential Luminescence Thermometry

    Science.gov (United States)

    2010-03-01

    high speed transimpedance amplifier that generates an output voltage proportional to the difference in the optical power in bands A and D, i.e., IA...bands in the luminescence spectrum by inter- ference filters, in combination with large core optical fi- bers and highly amplified balanced

  8. Analysis of RF section of 250 kW CW C-Band high power klystron

    International Nuclear Information System (INIS)

    Badola, Richa; Kaushik, Meenu; Baloda, Suman; Kirti; Vrati; Lamba, O.S.; Joshi, L.M.

    2012-01-01

    Klystron is a microwave tube which is used as a power amplifier in various applications like radar, particle accelerators and thermonuclear reactors. The paper deals with the analysis of RF section of 250 kW CW C band high power klystron for 50 to 60 kV beam voltage The simulation is done using Poisson's superfish and AJ disk software's Design of cavity is done using superfish. The result of superfish is used to decide the dimensions of the geometry of the cavity and AJ disk is used to determined the centre to centre distances between the cavities in order to obtain the desired powers. (author)

  9. Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

    Science.gov (United States)

    Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

    2018-02-01

    Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

  10. Design of a Front– End Amplifier for the Maximum Power Delivery and Required Noise by HBMO with Support Vector Microstrip Model

    Directory of Open Access Journals (Sweden)

    F. Guneş

    2014-04-01

    Full Text Available Honey Bee Mating Optimization (HBMO is a recent swarm-based optimization algorithm to solve highly nonlinear problems, whose based approach combines the powers of simulated annealing, genetic algorithms, and an effective local search heuristic to search for the best possible solution to the problem under investigation within a reasonable computing time. In this work, the HBMO- based design is carried out for a front-end amplifier subject to be a subunit of a radar system in conjunction with a cost effective 3-D SONNET-based Support Vector Regression Machine (SVRM microstrip model. All the matching microstrip widths, lengths are obtained on a chosen substrate to satisfy the maximum power delivery and the required noise over the required bandwidth of a selected transistor. The proposed HBMO- based design is applied to the design of a typical ultra-wide-band low noise amplifier with NE3512S02 on a substrate of Rogers 4350 for the maximum output power and the noise figure F(f=1dB within the 5-12 GHz using the T- type of microstrip matching circuits. Furthermore, the effectiveness and efficiency of the proposed HBMO based design are manifested by comparing it with the Genetic Algorithm (GA, Particle Swarm Optimization (PSO and the simple HBMO based designs.

  11. A novel power amplifier structure for RFID tag applications

    International Nuclear Information System (INIS)

    Deng Jianbao; Zhang Shilin; Li De; Zhang Yanzheng; Mao Luhong; Xie Sheng

    2011-01-01

    A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm 2 in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. (semiconductor integrated circuits)

  12. Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

    International Nuclear Information System (INIS)

    Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

    2010-01-01

    This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

  13. Multi Carrier Modulation Audio Power Amplifier with Programmable Logic

    DEFF Research Database (Denmark)

    Christiansen, Theis; Andersen, Toke Meyer; Knott, Arnold

    2009-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment. To lower the EMI of switch-mode (class D) audio power a...

  14. Development of High Power Amplifiers for Space and Ground-based Applications

    DEFF Research Database (Denmark)

    Hernández, Carlos Cilla

    The power amplifier used in the transmitter of a microwave system is a key issue, and it derermines the system performance, cost, power consumption and reliability to a considerable extent. Traditionally, most of high power amplifiers used in military and commercial applications were tube......, the device was delivering power levels larger than 75 W, PAE >35% and gain oscillating between 7.5 +/- 0.5 dB. Measurements were shifted down in frequency 1 GHz, but simulations predicted maximum power levels similar to the ones measured....

  15. Investigation on acceptable reverberation time at various frequency bands in halls that present amplified music

    DEFF Research Database (Denmark)

    Adelman-Larsen, Niels Werner; Jeong, Cheol-Ho; Støfringsdal, Bård

    2018-01-01

    Subjective ratings from 25 professional musicians and sound engineers were obtained to assess two Danish rock venues of similar size and similar low frequency reverberation times, but different high frequency reverberation times. The musicians judged one hall significantly better than the other......, confirming a hypothesis that rock venues can have a longer reverberation time at mid to high frequencies at least in the empty condition. A fairly long reverberation time in the 63 Hz octave band is found to be acceptable, so the 125 Hz octave band is probably the single most important band to control...... for amplified music....

  16. Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

    2008-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

  17. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

  18. PULSE MODULATION POWER AMPLIFIER WITH ENHANCED CASCADE CONTROL METHOD

    DEFF Research Database (Denmark)

    1998-01-01

    a single local feedback path A (7) with a lowpass characteristic and local forward blocks B¿1? or B (3, 4). The leads to a much improved system with a very low sensitivity to errors in the switching power stage. In the second preferred embodiment of the invention the control structure is extended...... and feedback path A to determine stable self-oscillating conditions. An implemented 250W example MECC digital power amplifier has proven superior performance in terms of audio performance (0.005 % distortion, 115 dB dynamic range) and efficiency (92 %).......A digital switching power amplifier with Multivariable Enhanced Cascade Controlled (MECC) includes a modulator, a switching power stage and a low pass filter. In the first preferred embodiment an enhanced cascade control structure local to the switching power stage is added, characterised by having...

  19. X-band uplink feedcone capabilities, components, and layout

    Science.gov (United States)

    Marlin, H.; Freiley, A.; Hartop, R.

    1986-01-01

    Two new X-(7.2 GHz up, 8.4 GHz down) and S-band (2.1 to 2.3 Ghz) common aperture (XSC) feedcones are being added to the DSS 45 and DSS 65 34-Meter Efficiency Antennas. These new feedcones are modifications of the existing SXC feedcone design incorporating a new high power (20-kW) X-band transmitter. The modified Antenna Microwave Subsystem design also incorporates two additional X-band low noise amplifiers and greater phase stability performance to meet both the increased stability requirements for Galileo gravity wave experiments and requirements for spacecraft navigation near the Sun. A third XSC will be constructed for DSS 15 later.

  20. Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

    Science.gov (United States)

    Seneviratne, Sashieka

    With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

  1. 1-MHz high power femtosecond Yb-doped fiber chirped-pulse amplifier

    Science.gov (United States)

    Hu, Zhong-Qi; Yang, Pei-Long; Teng, Hao; Zhu, Jiang-Feng; Wei, Zhi-Yi

    2018-01-01

    A practical femtosecond polarization-maintaining Yb-doped fiber amplifier enabling 153 fs transform-limited pulse duration with 32 μJ pulse energy at 1 MHz repetition rate corresponding to a peak power of 0.21 GW is demonstrated. The laser system based on chirped-pulse amplification (CPA) technique is seeded by a dispersion managed, nonlinear polarization evolution (NPE) mode-locked oscillator with spectrum bandwidth of 31 nm at 1040 nm and amplified by three fiber pre-amplifying stages and a rod type fiber main amplifying stage. The laser works with beam quality of M2 of 1.3 and power stability of 0.63% (root mean square, RMS) over 24 hours will be stable sources for industrial micromachining, medical therapy and scientific research.

  2. A Power Efficient Audio Amplifier Combining Switching and Linear Techniques

    NARCIS (Netherlands)

    van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

    1998-01-01

    Integrated Class D audio amplifiers are very power efficient, but require an external filter which prevents further integration. Also due to this filter, large feedback factors are hard to realise, so that the load influences the distortion- and transfer characteristics. The amplifier presented in

  3. Performance Analysis of a Hybrid Raman Optical Parametric Amplifier in the O- and E-Bands for CWDM PONs

    Directory of Open Access Journals (Sweden)

    Sasanthi Peiris

    2014-12-01

    Full Text Available We describe a hybrid Raman-optical parametric amplifier (HROPA operating at the O- and E-bands and designed for coarse wavelength division multiplexed (CWDM passive optical networks (PONs. We present the mathematical model and simulation results for the optimization of this HROPA design. Our analysis shows that separating the two amplification processes allows for optimization of each one separately, e.g., proper selection of pump optical powers and wavelengths to achieve maximum gain bandwidth and low gain ripple. Furthermore, we show that the proper design of optical filters incorporated in the HROPA architecture can suppress idlers generated during the OPA process, as well as other crosstalk that leaks through the passive optical components. The design approach enables error free performance for all nine wavelengths within the low half of the CWDM band, assigned to upstream traffic in a CWDM PON architecture, for all possible transmitter wavelength misalignments (±6 nm from the center wavelength of the channel band. We show that the HROPA can achieve error-free performance with a 170-nm gain bandwidth (e.g., 1264 nm–1436 nm, a gain of >20 dB and a gain ripple of <4 dB.

  4. A digitally assisted, signal folding neural recording amplifier.

    Science.gov (United States)

    Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

    2014-08-01

    A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

  5. A novel low-voltage operational amplifier for low-power pipelined ADCs

    International Nuclear Information System (INIS)

    Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian

    2009-01-01

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  6. Amplificador de Potencia de Alto Rendimiento Clase E en Banda S

    OpenAIRE

    Patiño Gómez, Moisés; Ortega González, Francisco Javier; Nicolás García, Miguel; Tena Ramos, David; Pardo Martín, José Manuel

    2016-01-01

    High-efficiency power amplification techniques are currently a well-known research field. A S-band suboptimum Class-E power amplifier based on a unmatched packaged GaN HEMT has been designed and built in this work. The load network of this amplifier is made of microstrip transmission lines and it is based on the double-reactance compensation principle. This kind of switchmode RF power amplifiers can be a solution for high-efficiency microwave amplification when nominal Class-E is not possi...

  7. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  8. Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

    Science.gov (United States)

    2017-08-14

    networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

  9. Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

  10. Accurate expressions for the power efficiency of a class-D power amplifier in a limit-cycle transmitter configuration

    NARCIS (Netherlands)

    Sarkeshi, M.; Mahmoudi, R.; Roermund, van A.H.M.

    2009-01-01

    Limit-cycle based, self-oscillating amplifiers are promising candidates for linear amplification of complex signals with high peak-to-average ratio, while maintaining high power efficiency. Limit-cycle transmitters employ switch class-D power amplifiers in order to achieve high Efficiency. In this

  11. Novel Approach to Design Ultra Wideband Microwave Amplifiers: Normalized Gain Function Method

    Directory of Open Access Journals (Sweden)

    R. Kopru

    2013-09-01

    Full Text Available In this work, we propose a novel approach called as “Normalized Gain Function (NGF method” to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function TNGF is defined as the ratio of T and |S21|^2, desired shape or frequency response of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN of the amplifier requires mathematically generated target gain functions to be tracked in two different nonlinear optimization processes. In this manner, NGF not only facilitates a mathematical base to share the amplifier gain function into such two distinct target gain functions, but also allows their precise computation in terms of TNGF=T/|S21|^2 at the very beginning of the design. The particular amplifier presented as the design example operates over 800-5200 MHz to target GSM, UMTS, Wi-Fi and WiMAX applications. An SRFT (Simplified Real Frequency Technique based design example supported by simulations in MWO (MicroWave Office from AWR Corporation is given using a 1400mW pHEMT transistor, TGF2021-01 from TriQuint Semiconductor.

  12. Solid state high power amplifier for driving the SLC injector klystron

    International Nuclear Information System (INIS)

    Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

    1985-03-01

    The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

  13. High-Efficiency K-Band Space Traveling-Wave Tube Amplifier for Near-Earth High Data Rate Communications

    Science.gov (United States)

    Simons, Rainee N.; Force, Dale A.; Spitsen, Paul C.; Menninger, William L.; Robbins, Neal R.; Dibb, Daniel R.; Todd, Phillip C.

    2010-01-01

    The RF performance of a new K-Band helix conduction cooled traveling-wave tube amplifier (TWTA), is presented in this paper. A total of three such units were manufactured, tested and delivered. The first unit is currently flying onboard NASA's Lunar Reconnaissance Orbiter (LRO) spacecraft and has flawlessly completed over 2000 orbits around the Moon. The second unit is a proto-flight model. The third unit will fly onboard NASA's International Space Station (ISS) as a very compact and lightweight transmitter package for the Communications, Navigation and Networking Reconfigurable Testbed (CoNNeCT), which is scheduled for launch in 2011. These TWTAs were characterized over the frequencies 25.5 to 25.8 GHz. The saturated RF output power is greater than 40 W and the saturated RF gain is greater than 46 dB. The saturated AM-to-PM conversion is 3.5 /dB and the small signal gain ripple is 0.46 dB peak-to-peak. The overall efficiency of the TWTA, including that of the electronic power conditioner (EPC) is as high as 45%.

  14. A Carbon Nanotube-based NEMS Parametric Amplifier for Enhanced Radio Wave Detection and Electronic Signal Amplification

    International Nuclear Information System (INIS)

    Aleman, B J; Sussman, A; Zettl, A; Mickelson, W

    2011-01-01

    We propose a scheme for a parametric amplifier based on a single suspended carbon nanotube field-emitter. This novel electromechanical nanotube device acts as a phase-sensitive, variable-gain, band-pass-filtering amplifier for electronic signal processing and, at the same time, can operate as a variable-sensitivity, tuneable detector and transducer of radio frequency electromagnetic waves. The amplifier can exhibit infinite gain at pumping voltages much less than 10 Volts. Additionally, the amplifier's low overhead power consumption (10-1000 nW) make it exceptionally attractive for ultra-low-power applications.

  15. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  16. Modulators for the S-band test linac at DESY

    Science.gov (United States)

    Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch.

    1995-07-01

    The development of adequate modulators for high peak power klystrons is one of the focus points for linear collider R&D programs. For the DESY/THD S-band linear collider study 150 MW rf-pulse power at 50 Hz repetition rate and 3 μs pulse duration is required [1]. Two different modulator schemes are under investigation. One is the conventional line type pulser, using a pulse forming network and a step up transformer, the other one is a hard tube pulser, using a dc power source at the full klystron voltage and a switch tube. This paper is focused on the modulator development for the S-band Test Linac at DESY. After a short overview over the test linac and a brief description of the 150 MW S-band klystron the circuitry of the line type pulse (LTP) is given. A hard tube pulser (HTP), which switches the high voltage directly from a storage capacitor to the klystron, has been built up at DESY. Circuitry and the results of the commissioning of the switch tube are reported.

  17. Very fast, high peak-power, planar triode amplifiers for driving optical gates

    International Nuclear Information System (INIS)

    Howland, M.M.; Davis, S.J.; Gagnon, W.L.

    1979-01-01

    Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

  18. Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

    DEFF Research Database (Denmark)

    Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

    2007-01-01

    due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

  19. A comprehensive study on gain stabilization of Er-doped fiber amplifier in C-band with uniform fiber Bragg grating-pair

    Science.gov (United States)

    Yang, Jiuru; Ma, Yu; OuYang, Yunlun; Liu, Chunyu; Zhang, Jiaxiao

    2014-07-01

    Fiber grating-pair is one of the efficient methods for gain stabilization of erbium doped fiber amplifier (EDFA) but with a gain-reduction of signals, especially in C-band. In order to overcome it, in this article, we establish a configuration of EDFA based uniform fiber grating-pair and conduct a comprehensive study on gain stabilization by varying the reflectivity, center wavelength and 3dB bandwidth of grating, and by varying the channel number and pump power. The numerical results show that under the optimal parameters of grating the gain stabilization at 1550nm is +/-0.044dB with high gain and large dynamic range.

  20. Magnetron based high energy S-band linac system

    International Nuclear Information System (INIS)

    Tiwari, T.; Krishnan, R.; Phatangare, Manoj

    2012-01-01

    This paper deals with the study of magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. The energy and dose are two important parameters of linac system which depend on input power of microwave source and length of linac tube. Here the author has studied how these parameters can be improved for side coupled standing wave S-band linac system

  1. Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

    1993-04-20

    We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

  2. A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

    International Nuclear Information System (INIS)

    Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

    1990-01-01

    A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

  3. Carrier Distortion in Hysteretic Self-Oscillating Class-D Audio Power:Amplifiers: Analysis and Optimization

    OpenAIRE

    Høyerby, Mikkel Christian Kofod; Andersen, Michael A. E.

    2009-01-01

    An important distortion mechanism in hysteretic self-oscillating (SO) class-D (switch mode) power amplifiers-–carrier distortion-–is analyzed and an optimization method is proposed. This mechanism is an issue in any power amplifier application where a high degree of proportionality between input and output is required, such as in audio power amplifiers or xDSL drivers. From an average-mode point of view, carrier distortion is shown to be caused by nonlinear variation of the hysteretic compara...

  4. Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Maroldt, Stephan

    2012-07-01

    Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

  5. A describing function approach to bipolar RF-power amplifier simulation

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    1981-01-01

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

  6. 1.5-GW S-band relativistic klystron amplifier

    Science.gov (United States)

    Ferguson, Patrick E.

    1992-04-01

    There is a strong symbiotic relationship between a developing technology and its applications. New technologies can generate applications previously either unrealizable or impractical. Conversely, applications can demand the development of new technological capability. Examples of both types of development can be found in the evolution of HPM. The high power and energy output made possible by HPM have created a technology driven interest in directed energy weapons and short pulse radar. On the other hand, the requirements for heating of fusion plasmas have resulted in an application driven program to develop high average power microwave devices. In this paper we address these and other applications such as RF electron linacs, laser pumping, and beaming of power. Emerging applications, such as ionispheric modification and environmental cleanup, are also touched upon. The approach of this paper will be to review each application separately and then compare the requirements of the applications in terms of the power, frequency and other key requirements necessary for HPM to usefully address the application.

  7. Muscle trade-offs in a power-amplified prey capture system.

    Science.gov (United States)

    Blanco, M Mendoza; Patek, S N

    2014-05-01

    Should animals operating at great speeds and accelerations use fast or slow muscles? The answer hinges on a fundamental trade-off: muscles can be maximally fast or forceful, but not both. Direct lever systems offer a straightforward manifestation of this trade-off, yet the fastest organisms use power amplification, not direct lever action. Power-amplified systems typically use slow, forceful muscles to preload springs, which then rapidly release elastic potential energy to generate high speeds and accelerations. However, a fast response to a stimulus may necessitate fast spring-loading. Across 22 mantis shrimp species (Stomatopoda), this study examined how muscle anatomy correlates with spring mechanics and appendage type. We found that muscle force is maximized through physiological cross-sectional area, but not through sarcomere length. Sit-and-wait predators (spearers) had the shortest sarcomere lengths (fastest contractions) and the slowest strike speeds. The species that crush shells (smashers) had the fastest speeds, most forceful springs, and longest sarcomeres. The origin of the smasher clade yielded dazzlingly high accelerations, perhaps due to the release from fast spring-loading for evasive prey capture. This study offers a new window into the dynamics of force-speed trade-offs in muscles in the biomechanical, comparative evolutionary framework of power-amplified systems. © 2014 The Author(s). Evolution © 2014 The Society for the Study of Evolution.

  8. Minimizing Crosstalk in Self Oscillating Switch Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Ploug, Rasmus Overgaard

    2012-01-01

    a method to minimize this phenomenon by improving the integrity of the various power distribution systems of the amplifier. The method is then applied to an amplifier built for this investigation. The results show that the crosstalk is suppressed with 30 dB, but is not entirely eliminated......The varying switching frequencies of self oscillating switch mode audio amplifiers have been known to cause interchannel intermodulation disturbances in multi channel configurations. This crosstalk phenomenon has a negative impact on the audio performance. The goal of this paper is to present...

  9. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Lixin; Jin Zhi; Liu Xinyu, E-mail: zhaolixin@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2009-12-15

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

  10. NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

    Science.gov (United States)

    Benet, James

    1993-01-01

    The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

  11. Design studies of the Ku-band, wide-band Gyro-TWT amplifier

    Science.gov (United States)

    Jung, Sang Wook; Lee, Han Seul; Jang, Kwong Ho; Choi, Jin Joo; Hong, Yong Jun; Shin, Jin Woo; So, Jun Ho; Won, Jong Hyo

    2014-02-01

    This paper reports a Ku-band, wide band Gyrotron-Traveling-wave-tube(Gyro-TWT) that is currently being developed at Kwangwoon University. The Gyro-TWT has a two stage linear tapered interaction circuit to obtain a wide operating bandwidth. The linearly-tapered interaction circuit and nonlinearly-tapered magnetic field gives the Gyro-TWT a wide operating bandwidth. The Gyro-TWT bandwidth is 23%. The 2d-Particle-in-cell(PIC) and MAGIC2d code simulation results are 17.3 dB and 24.34 kW, respectively for the maximum saturated output power. A double anode MIG was simulated with E-Gun code. The results were 0.7 for the transvers to the axial beam velocity ratio (=alpha) and a 2.3% axial velocity spread at 50 kV and 4 A. A magnetic field profile simulation was performed by using the Poisson code to obtain the grazing magnetic field of the entire interaction circuit with Poisson code.

  12. Operation amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2008-01-01

    To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

  13. Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

    Science.gov (United States)

    Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

    2010-11-01

    A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

  14. A review on power reducing methods of neural recording amplifiers

    Directory of Open Access Journals (Sweden)

    samira mehdipour

    2016-10-01

    Full Text Available Implantable multi-channel neural recording Microsystems comprise a large number of neural amplifiers, that can affect the overall power consumption and chip area of the analog part of the system.power, noise, size and dc offset are the main challenge faced by designers. Ideally the output of the opamp should be at zero volts when the inputs are grounded.In reality the input terminals are at slightly different dc potentials.The input offset voltage is defined as the voltage that must be applied between the two input terminals of the opamp to obtain zero volts at the output. Amplifier must have capability to reject this dc offset. First method that uses a capacitor feedback network with ac coupling of input devices to reject the offset is very popular in designs.very small low-cutoff frequency.The second method employs a closed-loop resistive feedback and electrode capacitance to form a highpass filter.Moreover,The third method adopts the symmetric floating resistor the feedback path of low noise amplifier to achieve low-frequency cutoff and rejects DC offset voltage. .In some application we can use folded cascade topology.The telescopic topology is a good candidate in terms of providing large gain and phase margin while dissipating small power. the cortical VLSI neuron model reducing power consumption of circuits.Power distribution is the best way to reduce power, noise and silicon area. The total power consumption of the amplifier array is reduced by applying the partial OTA sharing technique. The silicon area is reduced as a benefit of sharing the bulky capacitor.

  15. Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    J. Sturm

    2014-04-01

    Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

  16. Chaotic noise in superconducting microbridge 4-photon X-band parametric amplifier

    International Nuclear Information System (INIS)

    Andresen, J.E.; Christiansen, B.; Levinsen, M.T.

    1988-01-01

    The anomalous noise rise observed in nearly all types of parametric amplifiers based on Josephson junctions has been an intriguing as well as annoying problem for many years. This phenomenon has been most spectacular in microbridge amplifiers. Here we present measurements on externally pumped single microbridge 4-photon unbiased amplifiers, where the slit with the bridge is used as a slotline resonantly coupled to the waveguide in an exceptionally simple coupling scheme. This scheme may be of interest in itself, particularly if the noise problem can be overcome, but also in other connections. Up to 16 dB gain was obtained at the top of the waveguide. However, the noise rise was observed as usual. An analog computer study on a model including an input/output circiut was performed. The results are in very good agreement with the experiments. The amplification is heralded by a seemingly chaotic noise rise. This noise is then amplified linearly when gain occurs. Amplification is found to take place very close to where the supercurrent is completely suppressed by the pump. This has previously been interpreted as loss of phaselock being the cause of the noise rise. However, the power spectra of the time-derivative of the phase show the still to be locked in the region of positive gain. Furthermore, computations of the Lyapunov exponents show one to be positive in the region where gain occurs reaching a maximum value at the parameters corresponding to maximum gain. We therefore conclude that chaotic noise is indeed present in Josephson junction parametric amplifiers where low-impedance devices like microbridges with negligible capacitance are used as the active elements. (orig.)

  17. Compact solid state radio frequency amplifiers in kW regime for ...

    Indian Academy of Sciences (India)

    RF amplifier; solid state amplifier; power combiner and divider; .... was designed using planar and coaxial transmission line baluns with minimum lumped variable ..... Cripps S C 1999 RF power amplifiers for wireless communication. Norwood: ...

  18. Design, construction and test of RF solid state power amplifier for IRANCYC-10

    Science.gov (United States)

    Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

    2018-03-01

    In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

  19. A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission

    Science.gov (United States)

    Wu, Chang-Hsi; You, Hong-Cheng; Huang, Shun-Zhao

    2018-02-01

    An architecture of 5.2/5.8-GHz dual-band on-off keying (DBOOK) modulated transmitter is designed in a 0.18-μm CMOS technology. The proposed DBOOK transmitter is used in the biosignal transmission system with high power efficiency and small area. To reduce power consumption and enhance output swing, two pairs of center-tapped transformers are used as both LC tank and source grounding choke for the designed voltage controlled oscillator (VCO). Switching capacitances are used to achieve dual band operations, and a complemented power combiner is used to merge the differential output power of VCO to a single-ended output. Besides, the linearizer circuits are used in the proposed power amplifier with wideband output matching to improve the linearity both at 5.2/5.8-GHz bands. The designed DBOOK transmitter is implemented by dividing it into two chips. One chip implements the dual-band switching VCO and power combiner, and the other chip implements a linear power amplifier including dual-band operation. The first chip drives an output power of 2.2mW with consuming power of 5.13 mW from 1.1 V supply voltage. With the chip size including pad of 0.61 × 0.91 m2, the measured data rate and transmission efficiency attained are 100 Mb/s and 51 pJ/bit, respectively. The second chip, for power enhanced mode, exhibits P1 dB of -9 dBm, IIP3 of 1 dBm, the output power 1 dB compression point of 12.42 dBm, OIP3 of about 21 dBm, maximum output power of 17.02/16.18 dBm, and power added efficiency of 17.13/16.95% for 5.2/ 5.8 GHz. The chip size including pads is 0:693 × 1:084mm2.

  20. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  1. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  2. Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    Zhou G Tong

    2007-01-01

    Full Text Available Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM and code-division multiple access (CDMA, have high peak-to-average power ratios (PARs. A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs, but also leads to low transmission power efficiency. Selected mapping (SLM and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

  3. An RF Power Amplifier in a Digital CMOS Process

    DEFF Research Database (Denmark)

    Nielsen, Per Asbeck; Fallesen, Carsten

    2002-01-01

    A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

  4. TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2009-01-01

    This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... experimentally with a 9.6-dB peak-to-average 50-kHz 16 quadrature amplitude modulation TEDS carrier, the setup providing 44-dBm (25 W) average RF output power at 400 MHz with 44% dc-to-RF efficiency state-of-the-art ACPR of less than ${-}$67 dBc, switching noise artifacts around ${-}$ 85 dBc, and an overall rms...

  5. X-Parameter Based Modelling of Polar Modulated Power Amplifiers

    DEFF Research Database (Denmark)

    Wang, Yelin; Nielsen, Troels Studsgaard; Sira, Daniel

    2013-01-01

    X-parameters are developed as an extension of S-parameters capable of modelling non-linear devices driven by large signals. They are suitable for devices having only radio frequency (RF) and DC ports. In a polar power amplifier (PA), phase and envelope of the input modulated signal are applied...... at separate ports and the envelope port is neither an RF nor a DC port. As a result, X-parameters may fail to characterise the effect of the envelope port excitation and consequently the polar PA. This study introduces a solution to the problem for a commercial polar PA. In this solution, the RF-phase path...... PA for simulations. The simulated error vector magnitude (EVM) and adjacent channel power ratio (ACPR) were compared with the measured data to validate the model. The maximum differences between the simulated and measured EVM and ACPR are less than 2% point and 3 dB, respectively....

  6. Design of a power amplifier for the LAMPF proton storage ring transverse damper system

    International Nuclear Information System (INIS)

    Lunsford, J.S.

    1981-01-01

    A power amplifier has been designed to drive the 50-Ω stripline deflection structures in the transverse active damper of the Los Alamos 800-MeV Proton Storage Ring (PSR). The unit will provide 600-V peak-to-peak with a dc-to-100-MHz bandwidth. Other important characteristics include < 40-ns delay time, 50-dB voltage gain, and 4-ns risetime with < 5% overshoot and ringing. Because of the current-drive properties of the amplifier, two amplifiers could be combined to provide over 1000-V peak-to-peak into 50 Ω, with very little bandwidth degradation. Components in the power amplifier that represent new designs are a 20-tube distributed-amplifier output stage; a driver stage, using VMOS FET and bipolar transistors; a high-voltage probe, with good dc stability and 150-MHz bandwidth; a transient suppressor circuit, using PIN diodes to protect the transistorized drivers from tube arcing; a nonlinear amplifier to compensate for the nonlinear characteristics of the distributed amplifier; and a first-fail indicator circuit to aid in locating the prime causes of equipment failures

  7. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou

    2016-01-01

    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  8. Design and Modeling of RF Power Amplifiers with Radial Basis Function Artificial Neural Networks

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    A radial basis function (RBF) artificial neural network model for a designed high efficiency radio frequency class-F power amplifier (PA) is presented in this paper. The presented amplifier is designed at 1.8 GHz operating frequency with 12 dB of gain and 36 dBm of 1dB output compression point. The obtained power added efficiency (PAE) for the presented PA is 76% under 26 dBm input power. The proposed RBF model uses input and DC power of the PA as inputs variables and considers output power a...

  9. Investigation of Energy Consumption and Sound Quality for Class-D Audio Amplifiers using Tracking Power Supplies

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Schneider, Henrik; Knott, Arnold

    2015-01-01

    power supply tracking and its influence on power losses, audio performance and environmental impact for a 130 W class-D amplifier prototype as well as a commercialized class-D amplifier. Both modeled and experimental results verify that a large improvement of efficiency can be achieved. The total...... harmonic is found to be unaffected by stepless power supply tracking due the high supply rejection ratio of the used amplifiers under test.......The main advantage of Class-D audio amplifiers is high efficiency which is often stated to be more than 90 % but at idle or low power levels the efficiency is much lower. The waste energy is an environmental concern, a concern in mobile applications where long battery operation is required...

  10. Development of 350 MHz/1000 Watt intermediate power amplifier for 400 keV RFQ accelerator

    International Nuclear Information System (INIS)

    Pande, M.M.; Patel, N.R.; Shinde, K.R.; Rao, M.K.V.; Handu, V.K.

    2005-01-01

    Two numbers of high power RF systems, each delivering around 35 to 40 kW of power at 350 MHz are being developed in BARC. These High Power Amplifiers (HPA) cater to the total need of 70 kW of RF power required by the 400 keV (Deuterium) RFQ accelerator. This RFQ will replace the existing 400 keV DC accelerator of 14 MeV Neutron Generator. The RFQ will accelerate a deuterium beam from 50 keV to 400 keV to impinge upon a tritium target inside a sub critical assembly. Each of these 35 / 40 KW HPA requires a drive power of around 1000 / 1500 Watt respectively. Hence a intermediate power amplifier (IPA) bas been designed to deliver the power of 1000 Watt at the rate of 350 MHz. The paper describes the development of this amplifier

  11. Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

    Directory of Open Access Journals (Sweden)

    Mahammad A. Hannan

    2014-12-01

    Full Text Available With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil’s mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning

  12. Increased theta band EEG power in sickle cell disease patients

    Directory of Open Access Journals (Sweden)

    Case M

    2017-12-01

    Full Text Available Michelle Case,1 Sina Shirinpour,1 Huishi Zhang,1 Yvonne H Datta,2 Stephen C Nelson,3 Karim T Sadak,4 Kalpna Gupta,2 Bin He1,5 1Department of Biomedical Engineering, 2Department of Medicine, University of Minnesota, 3Pediatric Hematology-Oncology, Children’s Hospitals and Clinics of Minnesota, 4Pediatric Hematology-Oncology, University of Minnesota Masonic Children’s Hospital, 5Institute for Engineering in Medicine, University of Minnesota, Minneapolis, MN, USA Objective: Pain is a major issue in the care of patients with sickle cell disease (SCD. The mechanisms behind pain and the best way to treat it are not well understood. We studied how electroencephalography (EEG is altered in SCD patients. Methods: We recruited 20 SCD patients and compared their resting state EEG to that of 14 healthy controls. EEG power was found across frequency bands using Welch’s method. Electrophysiological source imaging was assessed for each frequency band using the eLORETA algorithm. Results: SCD patients had increased theta power and decreased beta2 power compared to controls. Source localization revealed that areas of greater theta band activity were in areas related to pain processing. Imaging parameters were significantly correlated to emergency department visits, which indicate disease severity and chronic pain intensity. Conclusion: The present results support the pain mechanism referred to as thalamocortical dysrhythmia. This mechanism causes increased theta power in patients. Significance: Our findings show that EEG can be used to quantitatively evaluate differences between controls and SCD patients. Our results show the potential of EEG to differentiate between different levels of pain in an unbiased setting, where specific frequency bands could be used as biomarkers for chronic pain. Keywords: sickle cell disease, electroencephalography, chronic pain, electrophysiological source imaging, thalamocortical dysrhythmia

  13. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

    International Nuclear Information System (INIS)

    Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

    2013-01-01

    We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

  14. Early Changes in Alpha Band Power and DMN BOLD Activity in Alzheimer’s Disease: A Simultaneous Resting State EEG-fMRI Study

    Directory of Open Access Journals (Sweden)

    Katharina Brueggen

    2017-10-01

    Full Text Available Simultaneous resting state functional magnetic resonance imaging (rsfMRI–resting state electroencephalography (rsEEG studies in healthy adults showed robust positive associations of signal power in the alpha band with BOLD signal in the thalamus, and more heterogeneous associations in cortical default mode network (DMN regions. Negative associations were found in occipital regions. In Alzheimer’s disease (AD, rsfMRI studies revealed a disruption of the DMN, while rsEEG studies consistently reported a reduced power within the alpha band. The present study is the first to employ simultaneous rsfMRI-rsEEG in an AD sample, investigating the association of alpha band power and BOLD signal, compared to healthy controls (HC. We hypothesized to find reduced positive associations in DMN regions and reduced negative associations in occipital regions in the AD group. Simultaneous resting state fMRI–EEG was recorded in 14 patients with mild AD and 14 HC, matched for age and gender. Power within the EEG alpha band (8–12 Hz, 8–10 Hz, and 10–12 Hz was computed from occipital electrodes and served as regressor in voxel-wise linear regression analyses, to assess the association with the BOLD signal. Compared to HC, the AD group showed significantly decreased positive associations between BOLD signal and occipital alpha band power in clusters in the superior, middle and inferior frontal cortex, inferior temporal lobe and thalamus (p < 0.01, uncorr., cluster size ≥ 50 voxels. This group effect was more pronounced in the upper alpha sub-band, compared to the lower alpha sub-band. Notably, we observed a high inter-individual heterogeneity. Negative associations were only reduced in the lower alpha range in the hippocampus, putamen and cerebellum. The present study gives first insights into the relationship of resting-state EEG and fMRI characteristics in an AD sample. The results suggest that positive associations between alpha band power and BOLD

  15. An X-band high-impedance relativistic klystron amplifier with an annular explosive cathode

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Danni; Zhang, Jun, E-mail: zhangjun@nudt.edu.cn; Zhong, Huihuang; Qi, Zumin [College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2015-11-15

    The feasibility of employing an annular beam instead of a solid one in the X-band high-impedance relativistic klystron amplifier (RKA) is investigated in theory and simulation. Small-signal theory analysis indicates that the optimum bunching distance, fundamental current modulation depth, beam-coupling coefficient, and beam-loaded quality factor of annular beams are all larger than the corresponding parameters of solid beams at the same beam voltage and current. An annular beam RKA and a solid beam RKA with almost the same geometric parameters are compared in particle-in-cell simulation. Output microwave power of 100 MW, gain of 50 dB, and power conversion efficiency of 42% are obtained in an annular beam RKA. The annular beam needs a 15% lower uniform guiding magnetic field than the solid beam. Our investigations demonstrate that we are able to use a simple annular explosive cathode immersed in a lower uniform magnetic field instead of a solid thermionic cathode in a complicated partially shielding magnetic field for designing high-impedance RKA, which avoids high temperature requirement, complicated electron-optical system, large area convergence, high current density, and emission uniformity for the solid beam. An equivalent method for the annular beam and the solid beam on bunching features is proposed and agrees with the simulation. The annular beam has the primary advantages over the solid beam that it can employ the immersing uniform magnetic field avoiding the complicated shielding magnetic field system and needs a lower optimum guiding field due to the smaller space charge effect.

  16. High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

    International Nuclear Information System (INIS)

    Wu Chiasong; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 x 1.10 mm 2 , obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (HP 3 ) of -3 dBm, an output third-order intercept point (OIP 3 ) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz. (semiconductor integrated circuits)

  17. CERN-group conceptual design of a fast neutron operated high power energy amplifier

    International Nuclear Information System (INIS)

    Rubbia, C.; Rubio, J.A.; Buono, S.

    1997-01-01

    The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

  18. CERN-group conceptual design of a fast neutron operated high power energy amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Rubbia, C; Rubio, J A [European Organization for Nuclear Research, CERN, Geneva (Switzerland); Buono, S [Laboratoire du Cyclotron, Nice (France); and others

    1997-11-01

    The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing. 84 refs, figs, tabs.

  19. S-band and X-band integrated PWT photoelectron linacs

    International Nuclear Information System (INIS)

    Yu, D.; Newsham, D.; Zeng, J.; Rosenzweig, J.

    2001-01-01

    A compact high-energy injector, which has been developed by DULY Research Inc., will have wide scientific, industrial, and medical applications. The new photoelectron injector integrates the photocathode directly into a multicell linear accelerator. By focusing the beam with solenoids or permanent magnets, and producing high current with low emittance, high brightness and low energy spread are achieved. In addition to providing a small footprint and improved beam quality in an integrated structure, the compact system considerably simplifies external subsystems required to operate the photoelectron linac, including rf power transport, beam focusing, vacuum and cooling. The photoelectron linac employs an innovative Plane-Wave-Transformer (PWT) design, which provides strong cell-to-cell coupling, relaxes manufacturing tolerances and facilitates the attachment of external ports to the compact structure with minimal field interference. DULY Research Inc. under the support of the DOE Small Business Innovation Research (SBIR) program, has developed, constructed and installed a 20-MeV, S-band compact electron source at UCLA. Cold test results for this device are presented. DULY Research is also actively engaged in the development of an X-band photoelectron linear accelerator in a SBIR project. When completed, the higher frequency structure will be approximately three times smaller. Design considerations for this device are discussed following the S-band cold test results

  20. A highly linear power amplifier for WLAN

    International Nuclear Information System (INIS)

    Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

    2016-01-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

  1. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    Science.gov (United States)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  2. Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

    International Nuclear Information System (INIS)

    Kwiatkowski, S.; Enegren, T.; Poirier, R.L.

    1988-06-01

    The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

  3. A coupler for parasitic mode diagnosis in an X-band triaxial klystron amplifier

    Directory of Open Access Journals (Sweden)

    Wei Zhang

    2017-10-01

    Full Text Available The traditional methods of parasitic mode excitation diagnosis in an X-band triaxial klystron amplifier (TKA meet two difficulties: limited installation space and vacuum sealing. In order to solve these issues, a simple and compact coupler with good sealing performance, which can prevent air flow between the main and the auxiliary waveguides, is proposed and investigated experimentally. The coupler is designed with the aperture diffraction theory and the finite-different time-domain (FDTD method. The designed coupler consists of a main coaxial waveguide (for microwave transmission and a rectangular auxiliary waveguide (for parasitic mode diagnosis. The entire coupler structure has been fabricated by macromolecule polymer which is transparent to microwave signal in frequency range of X-band. The metal coating of about 200 microns has been performed through electroplating technique to ensure that the device operates well at high power. A small aperture is made in the metal coating. Hence, microwave can couple through the hole and the wave-transparent medium, whereas air flow is blocked by the wave-transparent medium. The coupling coefficient is analyzed and simulated with CST software. The coupler model is also included in particle-in-cell (PIC simulation with CHIPIC software and the associated parasitic mode excitation is studied. A frequency component of 11.46 GHz is observed in the FFT of the electric field of the drift tube and its corresponding competition mode appears as TE61 mode according to the electric field distribution. Besides, a frequency component of 10.8 GHz is also observed in the FFT of the electric field. After optimization of TE61 mode suppression, an experiment of the TKA with the designed coupler is carried out and the parasitic mode excitation at 10.8 GHz is observed through the designed coupler.

  4. Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

    NARCIS (Netherlands)

    Vathulay, V.; Sowlati, T.; Leenaerts, D.M.W.

    2001-01-01

    In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit,

  5. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2011-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

  6. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, S.; Nauta, Bram

    2007-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

  7. Final installation and testing of the feedback power amplifier for the Scyllac feedback experiment

    International Nuclear Information System (INIS)

    Kutac, K.J.; Kewish, R.W. Jr.; Gribble, R.F.; Rawcliffe, A.S.; Miller, G.; Kemp, E.L.; Bartsch, R.R.

    1975-01-01

    The Scyllac feedback system consists of eight subsystems. The installation and testing of the many components and eight subsystems are described. The eight subsystems are: (1) ML-8618 power amplifiers; (2) dc plate and bias power supplies; (3) ac filament power supplies; (4) position detector and signal processor (intermediate amplifier); (5) l = 0 and l = 2 output load coils; (6) control system and interlock system; (7) computer controlled analog-to-digital transient recorders; and (8) cable distribution and cooling-water supply system

  8. Population structure of Salmonella investigated by amplified fragment length polymorphism

    DEFF Research Database (Denmark)

    Torpdahl, M.; Ahrens, Peter

    2004-01-01

    Aims: This study was undertaken to investigate the usefulness of amplified fragment length polymorphism (AFLP) in determining the population structure of Salmonella. Methods and Results: A total of 89 strains were subjected to AFLP analysis using the enzymes BglII and BspDI, a combination...... that is novel in Salmonella. Both species S. bongori and S. enterica and all subsp. of S. enterica were represented with emphasis on S. enterica subsp. enterica using a local strain collection and strains from the Salmonella Reference Collection B (SARB). The amplified fragments were used in a band...

  9. Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2008-01-01

    An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

  10. Optimization of pump parameters for gain flattened Raman fiber amplifiers based on artificial fish school algorithm

    Science.gov (United States)

    Jiang, Hai Ming; Xie, Kang; Wang, Ya Fei

    2011-11-01

    In this work, a novel metaheuristic named artificial fish school algorithm is introduced into the optimization of pump parameters for the design of gain flattened Raman fiber amplifiers for the first time. Artificial fish school algorithm emulates three simple social behaviors of a fish in a school, namely, preying, swarming and following, to optimize a target function. In this algorithm the pump wavelengths and power levels are mapped respectively to the state of a fish in a school, and the gain of a Raman fiber amplifier is mapped to the concentration of a food source for the fish school to search. Application of this algorithm to the design of a C-band gain flattened Raman fiber amplifier leads to an optimized amplifier that produces a flat gain spectrum with 0.63 dB in band ripple for given conditions. This result demonstrates that the artificial fish school algorithm is efficient for the optimization of pump parameters of gain flattened Raman fiber amplifiers.

  11. Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari

    2009-01-01

    A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

  12. Waveform measurement in mocrowave device characterization: impact on power amplifiers design

    Directory of Open Access Journals (Sweden)

    Roberto Quaglia

    2016-07-01

    Full Text Available This paper describes an example of a measurement setup enabling waveform measurements during the load-pull characterization of a microwave power device. The significance of this measurement feature is highlighted showing how waveform engineering can be exploited to design high efficiency microwave power amplifiers.

  13. Solid State Power Amplifier for 805 MegaHertz at the Los Alamos Neutron Science Center

    International Nuclear Information System (INIS)

    Davis, J.L.; Lyles, J.T.M.

    1998-01-01

    Particle accelerators for protons, electrons, and other ion species often use high-power vacuum tubes for RF amplification, due to the high RF power requirements to accelerate these particles with high beam currents. The final power amplifier stages driving large accelerators are unable to be converted to solid-state devices with the present technology. In some instances, radiation levels preclude the use of transistors near beamlines. Work is being done worldwide to replace the RF power stages under about ten kilowatts CW with transistor amplifiers, due to the lower maintenance costs and obsolescence of power tubes in these ranges. This is especially practical where the stages drive fifty Ohm impedance and are not located in high radiation zones. The authors are doing this at the Los Alamos Neutron Science Center (LANSCE) proton linear accelerator (linac) in New Mexico. They replaced a physically-large air-cooled UHF power amplifier using a tetrode electron tube with a compact water-cooled unit based on modular amplifier pallets developed at LANSCE. Each module uses eight push-pull bipolar power transistor pairs operated in class AB. Four pallets can easily provide up to 2,800 watts of continuous RF at 805 MHz. A radial splitter and combiner parallels the modules. This amplifier has proven to be completely reliable after over 10,000 hours of operation without failure. A second unit was constructed and installed for redundancy, and the old tetrode system was removed in 1998. The compact packaging for cooling, DC power, impedance matching, RF interconnection, and power combining met the electrical and mechanical requirements. CRT display of individual collector currents and RF levels is made possible with built-in samplers and a VXI data acquisition unit

  14. Power neodymium-glass amplifier of a repetitively pulsed laser

    Energy Technology Data Exchange (ETDEWEB)

    Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I [Russian Federal Nuclear Center ' All-Russian Research Institute of Experimental Physics' , Sarov, Nizhnii Novgorod region (Russian Federation)

    2011-11-30

    A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 Multiplication-Sign 25 mm and a {approx}40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 {mu}s. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass {approx}3.2, the linear gain {approx}0.031 cm{sup -1} with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm{sup -3}. The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4{lambda} ({lambda} = 0.63 {mu}m is the probing radiation wavelength).

  15. Power neodymium-glass amplifier of a repetitively pulsed laser

    International Nuclear Information System (INIS)

    Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I

    2011-01-01

    A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 × 25 mm and a ∼40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 μs. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass ∼3.2, the linear gain ∼0.031 cm -1 with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm -3 . The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4λ (λ = 0.63 μm is the probing radiation wavelength).

  16. A new principle for a high-efficiency power audio amplifier for use with a digital preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1987-01-01

    The use of class-B and class-D amplifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the usual principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

  17. Efficiency Investigation of Switch Mode Power Amplifier Drving Low Impedance Transducers

    DEFF Research Database (Denmark)

    Iversen, Niels Elkjær; Schneider, Henrik; Knott, Arnold

    2015-01-01

    the amplifier rail voltage requirement as a function of the voice coil nominal resistance is presented. The method is based on a crest factor analysis of music signals and estimation of the electrical power requirement from a specific target of the sound pressure level. Experimental measurements confirms a huge...... performance leap in terms of efficiency compared to a conventional battery driven sound system. Future optimization of low voltage, high current amplifiers for low impedance loudspeaker drivers are discussed....

  18. Recognition of Y Fragment Deletion by Genotyping Graphs after Amplified by PowerPlex® 21 Detection Kit.

    Science.gov (United States)

    Wang, S C; Ding, M M; Wei, X L; Zhang, T; Yao, F

    2016-06-01

    To recognize the possibility of Y fragment deletion of Amelogenin gene intuitively and simply according to the genotyping graphs. By calculating the ratio of total peak height of genotyping graphs, the statistics of equilibrium distribution between Amelogenin and D3S1358 loci, Amelogenin X-gene and Amelogenin Y-gene, and different alleles of D3S1358 loci from 1 968 individuals was analyzed after amplified by PowerPlex ® 21 detection kit. Sum of peak height of Amelogenin X allele was not less than 60% that of D3S1358 loci alleles in 90.8% female samples, and sum of peak height of Amelogenin X allele was not higher than 70% that of D3S1358 loci alleles in 94.9% male samples. The result of genotyping after amplified by PowerPlex ® 21 detection kit shows that the possibility of Y fragment deletion should be considered when only Amelogenin X-gene of Amelogenin is detected and the peak height of Amelogenin X-gene is not higher than 70% of the total peak height of D3S1358 loci. Copyright© by the Editorial Department of Journal of Forensic Medicine

  19. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  20. Power Scaling of Laser Oscillators and Amplifiers Based on Nd:YVO4

    OpenAIRE

    Yarrow, Michael James

    2006-01-01

    This thesis presents a strategy for power and brightness scaling in diode-end-pumped, master-oscillator-power-amplifier laser systems, based on Nd:YVOIssues relating to further power and brightness scaling are discussed as well as the potential applications of these laser sources as pump sources for frequency conversion in optical parametric devices.

  1. High power tests of X-band RF windows at KEK

    Energy Technology Data Exchange (ETDEWEB)

    Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

    1997-04-01

    Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

  2. Ferroelectric switch for a high-power Ka-band active pulse compressor

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  3. U-shaped Relation between Prestimulus Alpha-band and Poststimulus Gamma-band Power in Temporal Tactile Perception in the Human Somatosensory Cortex.

    Science.gov (United States)

    Wittenberg, Marc André; Baumgarten, Thomas J; Schnitzler, Alfons; Lange, Joachim

    2018-04-01

    Neuronal oscillations are a ubiquitous phenomenon in the human nervous system. Alpha-band oscillations (8-12 Hz) have been shown to correlate negatively with attention and performance, whereas gamma-band oscillations (40-150 Hz) correlate positively. Here, we studied the relation between prestimulus alpha-band power and poststimulus gamma-band power in a suprathreshold tactile discrimination task. Participants received two electrical stimuli to their left index finger with different SOAs (0 msec, 100 msec, intermediate SOA, intermediate SOA ± 10 msec). The intermediate SOA was individually determined so that stimulation was bistable, and participants perceived one stimulus in half of the trials and two stimuli in the other half. We measured neuronal activity with magnetoencephalography (MEG). In trials with intermediate SOAs, behavioral performance correlated inversely with prestimulus alpha-band power but did not correlate with poststimulus gamma-band power. Poststimulus gamma-band power was high in trials with low and high prestimulus alpha-band power and low for intermediate prestimulus alpha-band power (i.e., U-shaped). We suggest that prestimulus alpha activity modulates poststimulus gamma activity and subsequent perception: (1) low prestimulus alpha-band power leads to high poststimulus gamma-band power, biasing perception such that two stimuli were perceived; (2) intermediate prestimulus alpha-band power leads to low gamma-band power (interpreted as inefficient stimulus processing), consequently, perception was not biased in either direction; and (3) high prestimulus alpha-band power leads to high poststimulus gamma-band power, biasing perception such that only one stimulus was perceived.

  4. A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA

    Science.gov (United States)

    Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.

    2017-06-01

    Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.

  5. Performance of a 150-MW S-band klystron

    International Nuclear Information System (INIS)

    Sprehn, D.; Phillips, R.M.; Caryotakis, G.

    1994-09-01

    As part of an international collaboration, the Stanford Linear Accelerator Center (SLAC) klystron group has designed, fabricated, and tested a 60-Hz, 3-μs, 150-MW S-band klystron built for Deutsches Elektronen Synchrotron (DESY). A test diode with a 535-kV, 700-A electron beam was constructed to verify the gun operation. The first klystron was built and successfully met design specifications. The 375-MW electron beam represents a new record for SLAC accelerator klystrons in terms of voltage, current, energy, and ruggedness of design. The rf output power is a 150% increase over the S-band tubes currently used in the two-mile-long linear accelerator at SLAC. This paper discusses design issues and experimental results of the diode and klystron

  6. UWB Filtering Power Divider with Two Narrow Notch-bands and Wide Stop-band

    Science.gov (United States)

    Wei, Feng; Wang, Xin-Yi; Zou, Xin Tong; Shi, Xiao Wei

    2017-12-01

    A compact filtering ultra-wideband (UWB) microstrip power divider (PD) with two sharply rejected notch-bands and wide stopband is analyzed and designed in this paper. The proposed UWB PD is based on a conventional Wilkinson power divider, while two stub loaded resonators (SLRs) are coupled into two symmetrical output ports to achieve a bandpass filtering response. The simplified composite right/left-handed (SCRLH) resonators are employed to generate the dual notched bands. Defected ground structure (DGS) is introduced to improve the passband performance. Good insertion/return losses, isolation and notch-band rejection are achieved as demonstrated in both simulation and experiment.

  7. Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

    CERN Document Server

    Broere, J; Gómez Martínez, Y; Rossi, M

    2011-01-01

    Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

  8. High Efficiency Ka-Band Spatial Combiner

    Directory of Open Access Journals (Sweden)

    D. Passi

    2014-12-01

    Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

  9. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  10. Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

    Directory of Open Access Journals (Sweden)

    Zhiqun Cheng

    2017-01-01

    Full Text Available The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

  11. Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications.

    Science.gov (United States)

    Yousefinezhad, Sajad; Kermani, Saeed; Hosseinnia, Saeed

    2018-01-01

    The operational transconductance amplifier-capacitor (OTA-C) filter is one of the best structures for implementing continuous-time filters. It is particularly important to design a universal OTA-C filter capable of generating the desired filter response via a single structure, thus reducing the filter circuit power consumption as well as noise and the occupied space on the electronic chip. In this study, an inverter-based universal OTA-C filter with very low power consumption and acceptable noise was designed with applications in bioelectric and biomedical equipment for recording biomedical signals. The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. The performance of the proposed filter was simulated and analyzed via HSPICE software (level 49) and 180 nm complementary metal-oxide-semiconductor technology. The rate of power consumption and noise obtained from simulations are 7.1 nW and 10.18 nA, respectively, so this filter has reduced noise as well as power consumption. The proposed universal OTA-C filter was designed based on the minimum number of transconductance blocks and an inverter circuit by three transconductance blocks (OTA).

  12. A highly linear power amplifier for WLAN

    Science.gov (United States)

    Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

    2016-02-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

  13. Bandwidth Extension of an S-band, Fundamental-Mode Eight-Beam Klystron

    Science.gov (United States)

    2006-04-01

    Extension of an S - band , Fundamental-Mode Eight-Beam Klystron Khanh T. Nguyen Beam-Wave Research, Inc. Bethesda, MD 20814 Dean E. Pershing ATK Mission...of a five-cavity, approximately 18 cm downstream from the center of the broadband, high - power multiple-beam klystron (MBK) first gap - the logical...the circuit generates >550 kW across the band with a peak power of more than 600 kW at -3.27 Keywords: Multiple-beam klystron ; MBK; bandwidth GHz. The 1

  14. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    International Nuclear Information System (INIS)

    Chen, Zukun

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  15. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zukun [Los Alamos National Laboratory

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  16. Impact of gain saturation on the mode instability threshold in high-power fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Lægsgaard, Jesper

    2014-01-01

    We present a coupled-mode model of transverse mode instability in high-power fiber amplifiers, which takes the effect of gain saturation into account. The model provides simple semi-analytical formulas for the mode instability threshold, which are valid also for highly saturated amplifiers...

  17. A power-efficient audio amplifier combining switching and linear techniques

    NARCIS (Netherlands)

    van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

    1999-01-01

    Integrated class-D audio amplifiers are very power efficient but require an external LC reconstruction filter, which prevents further integration. Also due to this filter, large feedback factors are hard to realize, so that the load influences the distortion and transfer characteristics. The 30 W

  18. A noise reconfigurable current-reuse resistive feedback amplifier with signal-dependent power consumption for fetal ECG monitoring

    NARCIS (Netherlands)

    Song, Shuang; Rooijakkers, M.J.; Harpe, P.; Rabotti, C.; Mischi, M.; Van Roermund, A.H.M.; Cantatore, E.

    2016-01-01

    This paper presents a noise-reconfigurable resistive feedback amplifier with current-reuse technique for fetal ECG monitoring. The proposed amplifier allows for both tuning of the noise level and changing the power consumption according to the signal properties, minimizing the total power

  19. Band head spin assignment of superdeformed bands in Hg isotopes through power index formula

    Science.gov (United States)

    Sharma, Honey; Mittal, H. M.

    2018-05-01

    The power index formula has been used to obtain the band head spin (I 0) of all the superdeformed (SD) bands in Hg isotopes. A least squares fitting approach is used. The root mean square deviations between the determined and the observed transition energies are calculated by extracting the model parameters using the power index formula. Whenever definite spins are available, the determined and the observed transition energies are in accordance with each other. The computed values of dynamic moment of inertia J (2) obtained by using the power index formula and its deviation with the rotational frequency is also studied. Excellent agreement is shown between the calculated and the experimental results for J (2) versus the rotational frequency. Hence, the power index formula works very well for all the SD bands in Hg isotopes expect for 195Hg(2, 3, 4).

  20. Design and development of power supplies for high power IOT based RF amplifier

    International Nuclear Information System (INIS)

    Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

    2013-01-01

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  1. Modeling and experimental studies of a side band power re-injection locked magnetron

    Science.gov (United States)

    Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

    2016-12-01

    A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  2. Linearization and efficiency enhancement of power amplifiers using digital predistortion

    Energy Technology Data Exchange (ETDEWEB)

    Safari, Nima

    2008-07-01

    Today, demand of higher spectral efficiency forces wireless communication systems to employ non-constant envelope modulation schemes such as Quadrature Amplitude Modulations (QAM), Code Division Multiple Access (CDMA) and Orthogonal Frequency-Division Multiplexing (OFDM) schemes. These modulation techniques generate signals with wide range of envelope fluctuation. This property makes these schemes sensitive to nonlinear amplifications. Nonlinearities introduced by Power Amplifiers (PA) cause both a distortion of the signal and an increased out of band output spectrum, which leads to a rise in adjacent channel interference. Thus, in order to ensure a high spectral efficiency and to avoid spectral regrowth, a linearization technique is required. Among all the linearization techniques, basedband Digital Predistortion (DPD) is one of the commonly used linearization techniques, which is characterized by robust operation, low implementation cost and high accuracy. In the first chapter of this thesis, an introduction on the motivation and necessity of using PA linearization techniques is presented. Digital Predistortion as a popular linearization technique aims to improve the efficiency and linearity of RF power amplifiers. The scope of the thesis, the goals to be achieved and the contributions are also discussed in chapter one. Chapter two, mainly discusses sample-by-sample updating algorithm in Digital Predistorters to adaptively linearize the PA memoryless nonlinearities. Look-up Table (LUT) and polynomial approaches are studied and implemented in Hardware using a test-bed provided by Nera Research. The experimental results together with a discussion are then given. A new DPD algorithm based on block estimation is proposed in chapter three to avoid realtime signal processing, reduce the complexity and also avoid the bad performance during the slow adaptation of adaptive the Adjacent Channel Power Ratio (ACPR) and the Error Vector Magnitude (EVM) requirements. In

  3. 6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

    Directory of Open Access Journals (Sweden)

    Dong‐Hwan Shin

    2017-10-01

    Full Text Available A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W to 40.4 dBm (11 W with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

  4. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  5. Performance Analysis of Multiradio Transmitter with Polar or Cartesian Architectures Associated with High Efficiency Switched-Mode Power Amplifiers (invited paper

    Directory of Open Access Journals (Sweden)

    F. Robert

    2010-12-01

    Full Text Available This paper deals with wireless multi-radio transmitter architectures operating in the frequency band of 800 MHz – 6 GHz. As a consequence of the constant evolution in the communication systems, mobile transmitters must be able to operate at different frequency bands and modes according to existing standards specifications. The concept of a unique multiradio architecture is an evolution of the multistandard transceiver characterized by a parallelization of circuits for each standard. Multi-radio concept optimizes surface and power consumption. Transmitter architectures using sampling techniques and baseband ΣΔ or PWM coding of signals before their amplification appear as good candidates for multiradio transmitters for several reasons. They allow using high efficiency power amplifiers such as switched-mode PAs. They are highly flexible and easy to integrate because of their digital nature. But when the transmitter efficiency is considered, many elements have to be taken into account: signal coding efficiency, PA efficiency, RF filter. This paper investigates the interest of these architectures for a multiradio transmitter able to support existing wireless communications standards between 800 MHz and 6 GHz. It evaluates and compares the different possible architectures for WiMAX and LTE standards in terms of signal quality and transmitter power efficiency.

  6. S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2013-10-31

    We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)

  7. S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W

    2013-01-01

    We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)

  8. High-gain Seeded FEL Amplifier Tunable in the Terahertz Range

    CERN Document Server

    Sung, C; Pellegrini, C; Ralph, J E; Reiche, S; Rosenzweig, J B; Tochitsky, Sergei Ya

    2005-01-01

    The lack of a high-power, relatively low-cost and compact terahertz (THz) source in the range 0.3-3x10(12) Hz is the major obstacle in progressing on biomedical and material studies at these wavelengths. A high-gain, single pass seeded FEL technique allows to obtain high power THz pulses of a high spectral brightness. We describe an ongoing project at the Neptune laboratory where a ~ 1kW seed pulse generated by difference frequency mixing of CO2 laser lines in a GaAs nonlinear crystal is injected into a waveguide FEL amplifier. The FEL is driven by a 5 ps (r.m.s) long electron pulse with a peak current up to 100A provided by a regular S-band photoinjector. According to 3-D, time dependent simulations, up to ~ 10 MW THz power can be generated using a 2 meter long planar undulator. By mixing different pairs of CO2 laser lines and matching resonant energy of the electron beam, tunability in the 100-400 mm range is expected. A tunable Fabri-Perot interferometer will be used to select a high-power 5ps THz pulse. T...

  9. Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

    2011-01-01

    We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

  10. Power amplifier circuits for functional electrical stimulation systems

    Directory of Open Access Journals (Sweden)

    Delmar Carvalho de Souza

    Full Text Available Abstract Introduction: Functional electrical stimulation (FES is a technique that has been successfully employed in rehabilitation treatment to mitigate problems after spinal cord injury (SCI. One of the most relevant modules in a typical FES system is the power or output amplifier stage, which is responsible for the application of voltage or current pulses of proper intensity to the biological tissue, applied noninvasively via electrodes, placed on the skin surface or inside the muscular tissue, closer to the nervous fibers. The goals of this paper are to describe and discuss about the main power output designs usually employed in transcutaneous functional electrical stimulators as well as safety precautions taken to protect patients. Methods A systematic review investigated the circuits of papers published in IEEE Xplore and ScienceDirect databases from 2000 to 2016. The query terms were “((FES or Functional electric stimulator and (circuit or design” with 274 papers retrieved from IEEE Xplore and 29 from ScienceDirect. After the application of exclusion criteria the amount of papers decreased to 9 and 2 from IEEE Xplore and ScienceDirect, respectively. One paper was inserted in the results as a technological contribution to the field. Therefore, 12 papers presented power stage circuits suitable to stimulate great muscles. Discussion The retrieved results presented relevant circuits with different electronic strategies and circuit components. Some of them considered patient safety strategies or aimed to preserve muscle homeostasis such as biphasic current application, which prevents charge accumulation in stimulated tissues as well as circuits that dealt with electrical impedance variation to keep the electrode-tissue interface within an electrochemical safe regime. The investigation revealed a predominance of design strategies using operational amplifiers in power circuits, current outputs, and safety methods to reduce risks of electrical

  11. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    International Nuclear Information System (INIS)

    Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

    2013-01-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  12. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    Science.gov (United States)

    Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

    2013-06-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  13. Numerical simulation of cross field amplifiers

    International Nuclear Information System (INIS)

    Eppley, K.

    1990-01-01

    Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. One feature distinguishing cross field amplifiers is that the operating current is produced by secondary emission from a cold cathode. This removes the need for a heater and enables the device to act as a switch tube, drawing no power until the rf drive is applied. However, this method of generating the current does complicate the simulation. We are developing a simulation model of cross field amplifiers using the PIC code CONDOR. We simulate an interaction region, one traveling wavelength long, with periodic boundary conditions. An electric field with the appropriate phase velocity is imposed on the upper boundary of the problem. Evaluation of the integral of E·J gives the power interchanged between the wave and the beam. Given the impedance of the structure, we then calculate the change in the traveling wave field. Thus we simulate the growth of the wave through the device. The main advance of our model over previous CFA simulations is the realistic tracking of absorption and secondary emission. The code uses experimental curves to calculate secondary production as a function of absorbed energy, with a theoretical expression for the angular dependence. We have used this code to model the 100 MW X-band CFA under construction at SLAC, as designed by Joseph Feinstein and Terry Lee. We are examining several questions of practical interest, such as the power and spectrum of absorbed electrons, the minimum traveling wave field needed to initiate spoke formation, and the variation of output power with dc voltage, anode-cathode gap, and magnetic field. 5 refs., 8 figs

  14. A New Principle for a High Efficiency Power Audio Amplifier for Use with a Digital Preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1986-01-01

    The use of class-B and class-D amlifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore, a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the current principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

  15. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  16. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    Science.gov (United States)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  17. A high power, continuous-wave, single-frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

    International Nuclear Information System (INIS)

    Stappel, M; Steinborn, R; Kolbe, D; Walz, J

    2013-01-01

    We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52%. Two different approaches to frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO 3 crystal and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate crystal in an external enhancement cavity. (paper)

  18. Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

    CERN Document Server

    Kerhervé, Eric

    2015-01-01

    This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

  19. A multi-channel S-band FMCW radar front-end

    NARCIS (Netherlands)

    Maas, A.P.M.; Vliet, F.E. van

    2008-01-01

    This paper describes the design and performance of a low-cost synthesized FMCW radar module, operating in S band. The bi-layer PCB contains a frequency-agile low phase-noise synthesizer and three identical coherent receive-channels. The transmit channel has an automatic power control system that

  20. Towards a THz Backward Wave Amplifier in European FP7 OPTHER Project

    DEFF Research Database (Denmark)

    Dispenza, Massimiliano; Cojocaru, C.-S.; De Rossi, Alfredo

    2010-01-01

    -tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met...

  1. Development of a high power millimeter wave free-electron laser amplifier

    International Nuclear Information System (INIS)

    Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Rodgers, J.; Freund, H.P.

    1992-01-01

    Progress on the development of a high-average-power millimeter wave free-electron laser amplifier is reported. Successful sheet electron beam propagation has been observed through a 54 cm long wiggler magnet. One hundred percent transport efficiency is reported with a 15 A, 0.1 cm x 2.0 cm, sheet electron beam through B w = 5.1 kG, λ w = 0.96 cm, planar electromagnet wiggler. Preliminary success with a novel, yet simple, method of side focusing using offset poles is reported. Status of development on a 94 GHz, 180 kW, pulsed amplifier is discussed with results from numerical simulation

  2. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2004-01-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...

  3. Optimisation of 40 Gb/s wavelength converters based on four-wave mixing in a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Schulze, K.; Petersen, Martin Nordal; Herrera, J.

    2007-01-01

    The optimum operating powers and wavelengths for a 40 Gb/s wavelength converter based on four-wave mixing in a semiconductor 14 optical amplifier are inferred from experimental results. From these measurements, some general rules of thumb are derived for this kind of devices. Generally, the optim...

  4. Control interlock and monitoring system for 80 KW IOT based RF power amplifier system at 505.812 MHz for Indus-2

    International Nuclear Information System (INIS)

    Kumar, Gautam; Deo, R.K.; Jain, M.K.; Bagre, Sunil; Hannurkar, P.R.

    2013-01-01

    For 80 kW inductive output tube (IOT) based RF power amplifier system at 505.812 MHz for Indus-2, a control, interlock and monitoring system is realized. This is to facilitate proper start-up and shutdown of the amplifier system, monitor various parameters to detect any malfunction during its operation and to bring the system in a safe stage, thereby assuring reliable operation of the amplifier system. This high power amplifier system incorporates interlocks such as cooling interlocks, various voltage and current interlocks and time critical RF interlocks. Processing of operation sequence, cooling interlocks and various voltage and current interlocks have been realized by using Siemens make S7-CPU-315-2DP (CPU) based programmable logic controller (PLC) system. While time critical or fast interlocks have been realized by using Siemens make FPGA based Boolean Co-processor FM-352-5 which operates in standalone mode. Siemens make operating panel OP277 6'' is being used as a human machine interface (HMI) device for command, data, alarm generation and process parameter monitoring. (author)

  5. Development of a thermionic magnicon amplifier at 11.4 GHz. Final report for period May 16, 1995 - May 15, 2001

    International Nuclear Information System (INIS)

    Gold, Steven H.; Fliflet, Arne W.

    2001-01-01

    This is the final report on the research program ''Development of a Thermionic Magnicon Amplifier at 11.4 GHz,'' which was carried out by the Plasma Physics Division of the Naval Research Laboratory. Its goal was to develop a high-power, frequency-doubling X-band magnicon amplifier, an advanced scanning-beam amplifier, for use in future linear colliders. The final design parameters were 61 MW at 11.424 GHz, 59 dB gain, 59% efficiency, 1 microsecond pulselength and 10 Hz repetition rate. At the conclusion of this program, the magnicon was undergoing high-power conditioning, having already demonstrated high-power operation, phase stability, a linear drive curve, a small operational frequency bandwidth and a spectrally pure, single-mode output

  6. 5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xuelian; Yan Jun; Shi Yin [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Foster, Dai Fa, E-mail: xlzhang@semi.ac.c [Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849-5201 (United States)

    2009-01-15

    A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 mum SiGe BiCMOS technology and occupy 1.12 x 1.25 mm{sup 2} die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85 deg. C converges within +-3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

  7. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao, E-mail: tanxi@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2010-12-15

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 {mu}m CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm{sup 2}. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  8. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    International Nuclear Information System (INIS)

    Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao

    2010-01-01

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm 2 . System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  9. Systematic study of β-band and correlation with g- band using power law and soft rotor formula

    International Nuclear Information System (INIS)

    Katoch, Vikas; Kaushik, Reetu; Sharma, S.; Gupta, J.B.

    2014-01-01

    The nuclear structure of even Z even N medium mass transitional nuclei consist of ground state band, K π =0 1 β-band, K π =2 1 γ- band and other higher bands. As we move away from closed shell, energy levels are low lying from spherical to deformed nuclei and energy deviated from ideal rotor behavior. The energy of these transitional nuclei in ground band can also be studied using Bohr Mottelson energy expression, Soft Rotor Formula (SRF), Power Law (PL) etc. Recently, Gupta et al. (2013) modified SRF for non zero band head K π =2 1 γ-band and reproduced the level energies. Here same formula applied for K π =0 1 β-band and the level energies are reproduced and compared with experimental energies. The power law is also used for recalculation of level energies and for useful comparison

  10. Flexible power and bandwidth allocation in mobile satellites

    Science.gov (United States)

    Keyes, L. A.

    The introduction of L-band mobile communication services by spot beam satellites creates a payload design challenge due to uncertainty in the location and size of the new market to be served. A combination of payload technologies that allow a flexible allocation of power and bandwidth to any portion of the coverage area is described. Power flexibility is achieved by a novel combination of a low-level beam-forming network and a matrix power module which ensures equal sharing of power among individual amplifiers. This eliminates the loss of efficiency and increased mass when an amplifier associated with a beam must be over-designed to meet uncertainties in power distribution between beams. Flexibility in allocation of bandwidth to beams is achieved by intermediate frequency subdivision of the L-band service categories defined by ITU. These spectral subdivisions are assigned to beams by an IF interconnect matrix having beam ports and filter ports as inputs and outputs, respectively. Two such filter switch matrices are required, one for the inbound L-band to feeder link transponder, and one for the outbound feeder link to L-band transponder.

  11. Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200 μW.

    Science.gov (United States)

    Bolpasi, V; von Klitzing, W

    2010-11-01

    A 1 W tapered amplifier requiring only 200 μW of injection power at 780 nm is presented in this paper. This is achieved by injecting the seeding light into the amplifier from its tapered side and feeding the amplified light back into the small side. The amplified spontaneous emission of the tapered amplifier is suppressed by 75 dB. The double-passed tapered laser, presented here, is extremely stable and reliable. The output beam remains well coupled to the optical fiber for a timescale of months, whereas the injection of the seed light did not require realignment for over a year of daily operation.

  12. Behavioral modeling of microwave power amplifiers using a look up table method

    NARCIS (Netherlands)

    Shen, Y.; Gajadharsing, J.; Tauritz, J.L.

    2007-01-01

    The possibility of building a microwave power amplifier (PA) behavioral model based on the look-up table principle is investigated. The model so constructed avoids the difficulties in model structure selection and/or its parameter estimation.

  13. Theoretical analysis of mode instability in high-power fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

    2013-01-01

    We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo......-optic effect, leading to transverse mode instability. The temporal and spectral characteristics of the instability dynamics are investigated, and it is shown that the instability can be seeded by both quantum noise and signal intensity noise, while pure phase noise of the signal does not induce instability...

  14. 1-Pb/s (32 SDM/46 WDM/768 Gb/s) C-band Dense SDM Transmission over 205.6-km of Single-mode Heterogeneous Multi-core Fiber using 96-Gbaud PDM-16QAM Channels

    DEFF Research Database (Denmark)

    Kobayashi, Takayuki; Nakamura, M.; Hamaoka, F.

    2017-01-01

    We demonstrate the first 1-Pb/s unidirectional inline-amplified transmission over 205.6-km of single-mode 32-core fiber within C-band only. 96-Gbaud LDPC-coded PDM-16QAM channels with FEC redundancy of 12.75% realize high-aggregate spectral efficiency of 217.6 b/s/Hz...

  15. The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

    Energy Technology Data Exchange (ETDEWEB)

    J.G. Kulpin, K.J. Kleman, R.A. Legg

    2012-07-01

    A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

  16. L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

    Science.gov (United States)

    Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

    2017-12-01

    There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

  17. Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mokif Obais

    2017-05-01

    Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

  18. An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

    International Nuclear Information System (INIS)

    Zulkifli, M Z; Ahmad, H; Hassan, N A; Jemangin, M H; Harun, S W

    2011-01-01

    A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm to 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)

  19. Extended Cann Model for Behavioral Modeling of Envelope Tracking Power Amplifiers

    DEFF Research Database (Denmark)

    Tafuri, Felice Francesco; Larsen, Torben

    2013-01-01

    This paper deals with behavioral modeling of power amplifiers (PAs) for envelope tracking (ET) applications. In such a scenario, the power supply modulation brings in several additional challenges for the system design and, similarly, it becomes more difficult to obtain an accurate and general PA...... by the ET operation. The model performance is tested modeling data-sets acquired from an ET test bench including a commercial RFMD PA and an envelope modulator designed using a commercial IC from TI....

  20. A high-power millimeter-wave sheet beam free-electron laser amplifier

    International Nuclear Information System (INIS)

    Cheng, S.; Destler, W.W.; Granatstein, V.L.; Antonsen, T.M.; Levush, B.; Rodgers, J.; Zhang, Z.X.

    1996-01-01

    The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher injection power level indicates that the device has approached saturation. The device was studied over a broad range of experimental parameters. The experimental results have a good agreement with expectations from a one-dimensional simulation code. The successful operation of this device has proven the feasibility of the original concept and demonstrated the advantages of the sheet beam FEL amplifier. The results of the studies will provide guidelines for the future development of sheet beam FEL's and/or other kinds of sheet beam devices. These devices have fusion application

  1. Augmented twin-nonlinear two-box behavioral models for multicarrier LTE power amplifiers.

    Science.gov (United States)

    Hammi, Oualid

    2014-01-01

    A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square error by up to 3 dB for the same number of coefficients when compared to state-of-the-art twin-nonlinear two-box models. Furthermore, the augmented twin-nonlinear two-box models lead to the same performance as previously reported twin-nonlinear two-box models while requiring up to 80% less coefficients.

  2. A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK

    Directory of Open Access Journals (Sweden)

    Jorge Moreno Rubio

    2015-01-01

    Full Text Available This paper shows the design and simulation results of a hybrid Doherty power amplifier. The amplifier has been designed at 2,4 GHz, obtaining power-added efficiency above 70 % for 6 dB output power back-off, together with a small signal gain of 17 dB. Design and analysis equations are presented considering class AB bias conditions for the main amplifier and class C for the peak one in back-off larger than 6 dB, and FET device assumption. An additional control on the bias point of the peak device has been carried out, in order to increase the gain on the Doherty region and ease the design of the peak branch. A Cree’s GaN-HEMT CGH40010F device has been used with a nonlinear model guarantied up to 6 GHz and with an expected output power of 10 W. The obtained output power is higher than 25-W. The simulation has been carried out using Agilent ADS CAD tools. The present design could present the state of the art in terms of continuous-wave (CW characterization

  3. Serial topology of wide-band erbium-doped fiber amplifier for WDM applications

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Menif, M.

    2001-01-01

    Roč. 13, č. 9 (2001), s. 939-941 ISSN 1041-1135 R&D Projects: GA ČR GA102/99/0393 Institutional research plan: CEZ:AV0Z2067918 Keywords : erbium * wavelength division multiplexing * optical fibre amplifiers * optical fibre communication Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.004, year: 2001

  4. High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

    International Nuclear Information System (INIS)

    Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

    1991-01-01

    Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

  5. High power 352 MHz solid state amplifiers developed at the Synchrotron SOLEIL

    Directory of Open Access Journals (Sweden)

    P. Marchand

    2007-11-01

    Full Text Available In SOLEIL, 5 solid state amplifiers provide the required rf power at 352  MHz: 1×35  kW in the booster and 4×190  kW in the storage ring. They consist in a combination of a large number of 330 W elementary modules (1×147 in the booster and 4×724 in the storage ring, based on a design developed in-house, with MOSFETs (metal-oxide-semiconductor field-effect transistors, integrated circulators, and individual power supplies. Although quite innovative and challenging for the required power range, this technology is very attractive and presents significant advantages as compared to the more conventional vacuum tubes, klystrons, or inductive output tubes (IOTs. The booster and two of the storage ring power plants have been successfully commissioned and the first operational experience is quite satisfactory. The amplifiers proved to be very reliable as well as easy and flexible in operation; they have not been responsible for any beam time loss.

  6. High-power, solid-state rf source for accelerator cavities

    International Nuclear Information System (INIS)

    Vaughan, D.R.; Mols, G.E.; Reid, D.W.; Potter, J.M.

    1985-01-01

    During the past few years the Defense and Electronics Center of Westinghouse Electric Corporation has developed a solid-state, 250-kW peak, rf amplifier for use with the SPS-40 radar system. This system has a pulse length of 60 μs and operates across the frequency band from 400 to 450 MHz. Because of the potential use of such a system as an rf source for accelerator applications, a collaborative experiment was initiated between Los Alamos National Laboratory and Westinghouse to simulate the resonant load conditions of an accelerator cavity. This paper describes the positive results of that experiment as well as the solid-state amplifier architecture. It also explores the future of high-power, solid-state amplifiers as rf sources for accelerator structures

  7. High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

  8. Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses for fiber amplifiers at 1.3 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Simons, D.R.; Faber, A.J.; de Waal, H. [Glass Technology, Eindhoven University of Technology, P.O. Box 595, 5600 AN Eindhoven (Netherlands)

    1995-03-01

    The photoluminescence properties of Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeS{sub {ital x}}-containing glasses in the telecommunications window at 1.3 {mu}m is discussed.

  9. IOT based RF power systems as an alternative to klystron amplifier in Indus-2 at the rate 505.812 MHz

    International Nuclear Information System (INIS)

    Deo, R.K.; Jain, M.K.; Kumar, Gautam; Lad, Mahendra; Badapanda, M.K.; Bagre, Sunil; Upadhyay, Rinki; Tripathi, Akhilesh; Rao, J.N.; Pandiyar, Mohan; Hannurkar, P.R.

    2013-01-01

    Due to non-availability of replacement Klystron tube in Indus-2, an IOT based high power RF amplifier system is realized. It is based on E2V make 80 kW IOTD2130 tube with its circuit assembly IMD2000ST. This amplifier system is easily available commercially due to its application in DTV broadcast. It has inherent advantages over klystron amplifier viz. high efficiency (η), less phase and amplitude sensitivity to HV ripple, higher linearity, compactness and less cooling requirement. This high power IOT amplifier is tested with its required control system, cooling system, electron gun auxiliary supplies, beam supply and focusing supply. The nominal beam voltage for this IOT is -36 kV however amplifier was tested successfully with indigenously developed -32 kV, crowbar less power supply. The optimum load impedance for IOT beam was calculated for this bias voltage ( 32kV). For the required load impedance, coupling coefficient (β) of output coupler to the O/P cavity was estimated and accordingly loop angle was adjusted. The amplifier has been tested up to 50 kW with amplifier efficiency 60% and gain 23 dB at - 32 kV beam voltage. (author)

  10. Development of C-band High-Power Mix-Mode RF Window

    CERN Document Server

    Michizono, S; Matsumoto, T; Nakao, K; Takenaka, T

    2004-01-01

    High power c-band (5712 MHz) rf system (40 MW, 2 μs, 50 Hz) is under consideration for the electron-linac upgrade aimed for the super KEKB project. An rf window, which isolates the vacuum and pass the rf power, is one of the most important components for the rf system. The window consists of a ceramic disk and a pill-box housing. The mix-mode rf window is designed so as to decrease the electric field on the periphery of the ceramic disk. A resonant ring is assembled in order to examine the high-power transmission test. The window was tested up to the transmission power of 160 MW. The rf losses are also measured during the rf operation.

  11. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  12. Frequency dependent loss analysis and minimization of system losses in switchmode audio power amplifiers

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2014-01-01

    In this paper, frequency dependent losses in switch-mode audio power amplifiers are analyzed and a loss model is improved by taking the voltage dependence of the parasitic capacitance of MOSFETs into account. The estimated power losses are compared to the measurement and great accuracy is achieved...

  13. Analysis of Lifetime Data for the Linac 201 MHz Power Amplifiers

    International Nuclear Information System (INIS)

    McCrory, Elliot; Webber, Robert C.

    2002-01-01

    This document analyzes data on the lifetime of the 201-MHz triode power amplifier (PA) vacuum tube, model number 7835, used in the low-energy half of the Linac. We observe that a 7835 power amplifier vacuum tube has historically provided about one and one-third years service in the Linac. The lifetime of recently re-manufactured tubes is somewhat less, but it is not clear if this is because the manufacturer is ''loosing their touch,'' or because tubes cannot be effectively rebuilt after a certain number of times. Taking into account the expected tube lifetimes, the statistical fluctuations on this number, and the amount of time it takes for the manufacturer to make good tubes, we require about 14 tubes either operating, ready as good spares or being manufactured, in order to have sufficient spares to run the Linac. As a hedge against supplier drop out, we need to increase our inventory of good spare tubes by about three tubes per year for the next few years

  14. BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

    KAUST Repository

    Wang, Kezhi

    2014-10-01

    Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB\\'s in effective signal-to-noise ratio.

  15. Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASE pumping in an EDF section

    DEFF Research Database (Denmark)

    Buxens Azcoaga, Alvaro Juan; Poulsen, Henrik Nørskov; Clausen, Anders

    2000-01-01

    A novel method is presented for implementing an L-band erbium doped fibre amplifier (EDFA) making use of forward amplified spontaneous emission pumping, from a commercially available c-band EDFA, in an erbium doped fibre. Tuning of the length of erbium doped fibre enables a flat gain characteristic...... to be obtained with a low noise figure over the entire L-band window....

  16. Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

    Science.gov (United States)

    Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

    2014-01-01

    With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of

  17. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    Science.gov (United States)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  18. MVA amplifier used for plasma position control in the WEGA tokamak

    International Nuclear Information System (INIS)

    Schenk, G.

    1982-02-01

    A new amplifier has been developed for the control of the plasma positron in the WEGA III tokomak acting on the vertical magnetic field. In the high power domain thyristor choppers are usually applied. Unfortunately their response time is quite long and does not yet correspond to the WEGA demand. Therefore transistors have been used to build a fast switching amplifier of the H-bridge type, delivering a power of 1 MVA, by switching 2500 A at 400 V. Because of the duty cycle of the plasma (0,12 s every 240 s) the necessary average power to the amplifier supply is only 500 VA. An intermediate energy storage in an electrolytic capacitor bank is therefore used. As the switching transistors must operate under extreme conditions of voltage and current, precautions must be taken to limit the overvoltage and the overcurrent, to prevent oscillations and to assure power and control equilibrium among the transistors

  19. Ka-Band Klystron Amplifier for CUBESATs, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We offer an ultra-compact klystron amplifier for remote sensing on CubeSats. It will operate at 35.7 GHz, have 400 MHz bandwidth, and output greater than 32 watts...

  20. NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

    Science.gov (United States)

    Benet, James

    1994-01-01

    This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

  1. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  2. Multi-pass amplifier architecture for high power laser systems

    Science.gov (United States)

    Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

    2014-04-01

    A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

  3. Class-E Amplifier Design Improvements for GSM Frequencies

    Directory of Open Access Journals (Sweden)

    Z. Nadir

    2011-06-01

    Full Text Available Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is the continuation of previous work by the authors. These nonlinear power amplifiers can only amplify constant-envelope RF signals without introducing significant distortion. Mobile systems such as Advanced Mobile Phone System (AMPS and Global System for Mobile communications (GSM use modulation schemes which generate constant amplitude RF outputs in order to use efficient but nonlinear power amplifiers. Improvements in designs are suggested and higher efficiencies are achieved, to the tune of 67.1% (for 900 MHz and 67.0% (1800 MHz.

  4. Ka-band Technologies for Small Spacecraft Communications via Relays and Direct Data Downlink

    Science.gov (United States)

    Budinger, James M.; Niederhaus, Charles; Reinhart, Richard; Downey, Joe; Roberts, Anthony

    2016-01-01

    As the scientific capabilities and number of small spacecraft missions in the near Earth region increase, standard yet configurable user spacecraft terminals operating in Ka-band are needed to lower mission cost and risk and enable significantly higher data return than current UHF or S-band terminals. These compact Ka-band terminals are intended to operate with both the current and next generation of Ka-band relay satellites and via direct data communications with near Earth tracking terminals. This presentation provides an overview of emerging NASA-sponsored and commercially provided technologies in software defined radios (SDRs), transceivers, and electronically steered antennas that will enable data rates from hundreds of kbps to over 1 Gbps and operate in multiple frequency bands (such as S- and X-bands) and expand the use of NASA's common Ka-bands frequencies: 22.55-23.15 GHz for forward data or uplink; and 25.5-27.0 GHz for return data or downlink. Reductions in mass, power and volume come from integration of multiple radio functions, operations in Ka-band, high efficiency amplifiers and receivers, and compact, flat and vibration free electronically steered narrow beam antennas for up to + 60 degrees field of regard. The software defined near Earth space transceiver (SD-NEST) described in the presentation is intended to be compliant with NASA's space telecommunications radio system (STRS) standard for communications waveforms and hardware interoperability.

  5. Effect of the Power Balance® band on static balance, hamstring flexibility, and arm strength in adults.

    Science.gov (United States)

    Verdan, Princess J R; Marzilli, Thomas S; Barna, Geanina I; Roquemore, Anntionette N; Fenter, Brad A; Blujus, Brittany; Gosselin, Kevin P

    2012-08-01

    The purpose of this study was to determine the effect of Power Balance® bands on strength, flexibility, and balance. Strength and flexibility were measured using the MicroFit system. Strength was measured via a bicep curl and flexibility via the sit-and-reach method. Balance was measured by the BIODEX System SD. There were 4 different conditions for the balance test: eyes open on a firm surface (EOFS), eyes closed on a firm surface (ECFS), eyes open on a foam surface (EOFoS), and eyes closed on a foam surface (ECFoS). There were 24 subjects in the study (10 men and 14 women). A counterbalance, double-blind, placebo, controlled within-subject design was used. Each of the subjects participated in 3 treatment sessions, consisting of Power Balance®, placebo band, and no band. An alpha level of p ≤ 0.05 was set a priori. There were no significant differences in strength, flexibility, or balance with regard to the treatments used. There was a significant difference between the conditions in the balance test (p = 0.000): EOFS (0.51), ECFS (0.68), EOFoS (0.99), and ECFoS (2.18); however, these were independent of the treatment conditions. The results indicate that the Power Balance® bands did not have an effect on strength, flexibility, or balance.

  6. A non-uniform three-gap buncher cavity with suppression of transverse-electromagnetic mode leakage in the triaxial klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Zumin; Zhang, Jun, E-mail: zhangjun-nudt@126.com; Zhong, Huihuang; Zhu, Danni; Qiu, Yongfeng [College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-01-15

    The triaxial klystron amplifier is an efficient high power relativistic klystron amplifier operating at high frequencies due to its coaxial structure with large radius. However, the coaxial structures result in coupling problems among the cavities as the TEM mode is not cut-off in the coaxial tube. Therefore, the suppression of the TEM mode leakage, especially the leakage from the buncher cavity to the input cavity, is crucial in the design of a triaxial klystron amplifier. In this paper, a non-uniform three-gap buncher cavity is proposed to suppress the TEM mode leakage. The cold cavity analysis shows that the non-uniform three-gap buncher cavity can significantly suppress the TEM mode generation compared to a uniform three-gap buncher cavity. Particle-in-cell simulation shows that the power leakage to the input cavity is less than 1.5‰ of the negative power in the buncher cavity and the buncher cavity can efficiently modulate an intense relativistic electron beam free of self-oscillations. A fundamental current modulation depth of 117% is achieved by employing the proposed non-uniform buncher cavity into an X-band triaxial amplifier, which results in the high efficiency generation of high power microwave.

  7. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

    International Nuclear Information System (INIS)

    Zhang Ying; Wang Zhigong; Xu Jian; Luo Yin

    2012-01-01

    A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of ±1 dB in the 2–20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 × 1.01 mm 2 . (semiconductor integrated circuits)

  8. Capacity Enhancement for Hybrid Fiber-Wireless Channels with 46.8Gbit/sWireless Multi-CAP Transmission over 50m at W-Band

    DEFF Research Database (Denmark)

    Rommel, Simon; Puerta Ramírez, Rafael; Vegas Olmos, Juan José

    2017-01-01

    Transmission of a 46.8 Gbit/s multi-band CAP signal is experimentally demonstrated over a 50 m W-band radio-over-fiber link. Bit error rates below 3.8×10-3 are achieved, employing nine CAP bands with bit and power loading.......Transmission of a 46.8 Gbit/s multi-band CAP signal is experimentally demonstrated over a 50 m W-band radio-over-fiber link. Bit error rates below 3.8×10-3 are achieved, employing nine CAP bands with bit and power loading....

  9. A low-power wide range transimpedance amplifier for biochemical sensing.

    Science.gov (United States)

    Rodriguez-Villegas, Esther

    2007-01-01

    This paper presents a novel low voltage and low power transimpedance amplifier for amperometric potentiostats. The power is optimized by having three different gain settings for different current ranges, which can be programmed with a biasing current. The voltage ranges have been optimized by using FGMOS transistors in a second voltage amplification stage that simultaneously allow for offset calibration as well as independent biasing of the gates. The circuit operates with input currents from 1 pA to 1 microA, with a maximum power supply voltage of 1.5 V and consumes 82.5 nW, 9.825 microW, 47.325 microW for currents varying from (1 pA, 0.25 nA), (0.25 nA, 62.5 nA) and (62.5 nA, 1 microA) respectively.

  10. An implantable integrated low-power amplifier-microelectrode array for Brain-Machine Interfaces.

    Science.gov (United States)

    Patrick, Erin; Sankar, Viswanath; Rowe, William; Sanchez, Justin C; Nishida, Toshikazu

    2010-01-01

    One of the important challenges in designing Brain-Machine Interfaces (BMI) is to build implantable systems that have the ability to reliably process the activity of large ensembles of cortical neurons. In this paper, we report the design, fabrication, and testing of a polyimide-based microelectrode array integrated with a low-power amplifier as part of the Florida Wireless Integrated Recording Electrode (FWIRE) project at the University of Florida developing a fully implantable neural recording system for BMI applications. The electrode array was fabricated using planar micromachining MEMS processes and hybrid packaged with the amplifier die using a flip-chip bonding technique. The system was tested both on bench and in-vivo. Acute and chronic neural recordings were obtained from a rodent for a period of 42 days. The electrode-amplifier performance was analyzed over the chronic recording period with the observation of a noise floor of 4.5 microVrms, and an average signal-to-noise ratio of 3.8.

  11. Fourier band-power E/B-mode estimators for cosmic shear

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Matthew R.; Rozo, Eduardo

    2016-01-20

    We introduce new Fourier band-power estimators for cosmic shear data analysis and E/B-mode separation. We consider both the case where one performs E/B-mode separation and the case where one does not. The resulting estimators have several nice properties which make them ideal for cosmic shear data analysis. First, they can be written as linear combinations of the binned cosmic shear correlation functions. Secondly, they account for the survey window function in real-space. Thirdly, they are unbiased by shape noise since they do not use correlation function data at zero separation. Fourthly, the band-power window functions in Fourier space are compact and largely non-oscillatory. Fifthly, they can be used to construct band-power estimators with very efficient data compression properties. In particular, we find that all of the information on the parameters Ωm, σ8 and ns in the shear correlation functions in the range of ~10–400 arcmin for single tomographic bin can be compressed into only three band-power estimates. Finally, we can achieve these rates of data compression while excluding small-scale information where the modelling of the shear correlation functions and power spectra is very difficult. Given these desirable properties, these estimators will be very useful for cosmic shear data analysis.

  12. A high-efficiency superconductor distributed amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Herr, Q P, E-mail: quentin.herr@ngc.co [Northrop Grumman Corporation, 7323 Aviation Boulevard, Baltimore, MD 21240 (United States)

    2010-02-15

    A superconductor output amplifier that converts single-flux-quantum signals to a non-return-to-zero pattern is reported using a twelve-stage distributed amplifier configuration. The output amplitude is measured to be 1.75 mV over a wide bias current range of {+-} 12%. The bit error rate is measured using a Delta-Sigma data pattern to be less than 1 x 10{sup -9} at 10 Gb s{sup -1} per channel. Analysis of the eye diagram suggests that the actual bit error rate may be much lower. The amplifier has power efficiency of 12% neglecting the termination resistor, which may be eliminated from the circuit with a small modification. (rapid communication)

  13. Power Allocation Strategies for Distributed Space-Time Codes in Amplify-and-Forward Mode

    Directory of Open Access Journals (Sweden)

    Are Hjørungnes

    2009-01-01

    Full Text Available We consider a wireless relay network with Rayleigh fading channels and apply distributed space-time coding (DSTC in amplify-and-forward (AF mode. It is assumed that the relays have statistical channel state information (CSI of the local source-relay channels, while the destination has full instantaneous CSI of the channels. It turns out that, combined with the minimum SNR based power allocation in the relays, AF DSTC results in a new opportunistic relaying scheme, in which the best relay is selected to retransmit the source's signal. Furthermore, we have derived the optimum power allocation between two cooperative transmission phases by maximizing the average received SNR at the destination. Next, assuming M-PSK and M-QAM modulations, we analyze the performance of cooperative diversity wireless networks using AF opportunistic relaying. We also derive an approximate formula for the symbol error rate (SER of AF DSTC. Assuming the use of full-diversity space-time codes, we derive two power allocation strategies minimizing the approximate SER expressions, for constrained transmit power. Our analytical results have been confirmed by simulation results, using full-rate, full-diversity distributed space-time codes.

  14. Bondwire array modeling for the design of hybrid high power amplifiers above C-band

    DEFF Research Database (Denmark)

    Hernández, Carlos Cilla; Jónasson, Sævar Þór; Hanberg, Jesper

    2012-01-01

    This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to si...

  15. Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

    Science.gov (United States)

    Thakur, S. K.; Kumar, Y.

    2018-05-01

    This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

  16. Nonlinearly driven oscillations in the gyrotron traveling-wave amplifier

    International Nuclear Information System (INIS)

    Chiu, C. C.; Pao, K. F.; Yan, Y. C.; Chu, K. R.; Barnett, L. R.; Luhmann, N. C. Jr.

    2008-01-01

    By delivering unprecedented power and gain, the gyrotron traveling-wave amplifier (gyro-TWT) offers great promise for advanced millimeter wave radars. However, the underlying physics of this complex nonlinear system is yet to be fully elucidated. Here, we report a new phenomenon in the form of nonlinearly driven oscillations. A zero-drive stable gyro-TWT is shown to be susceptible to a considerably reduced dynamic range at the band edge, followed by a sudden transition into driven oscillations and then a hysteresis effect. An analysis of this unexpected behavior and its physical interpretation are presented.

  17. Ka-Band, Multi-Gigabit-Per-Second Transceiver

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Smith, Francis J.; Harris, Johnny M.; Landon, David G.; Haddadin, Osama S.; McIntire, William K.; Sun, June Y.

    2011-01-01

    A document discusses a multi-Gigabit-per-second, Ka-band transceiver with a software-defined modem (SDM) capable of digitally encoding/decoding data and compensating for linear and nonlinear distortions in the end-to-end system, including the traveling-wave tube amplifier (TWTA). This innovation can increase data rates of space-to-ground communication links, and has potential application to NASA s future spacebased Earth observation system. The SDM incorporates an extended version of the industry-standard DVB-S2, and LDPC rate 9/10 FEC codec. The SDM supports a suite of waveforms, including QPSK, 8-PSK, 16-APSK, 32- APSK, 64-APSK, and 128-QAM. The Ka-band and TWTA deliver an output power on the order of 200 W with efficiency greater than 60%, and a passband of at least 3 GHz. The modem and the TWTA together enable a data rate of 20 Gbps with a low bit error rate (BER). The payload data rates for spacecraft in NASA s integrated space communications network can be increased by an order of magnitude (>10 ) over current state-of-practice. This innovation enhances the data rate by using bandwidth-efficient modulation techniques, which transmit a higher number of bits per Hertz of bandwidth than the currently used quadrature phase shift keying (QPSK) waveforms.

  18. Q-Band (37-41 GHz) Satellite Beacon Architecture for RF Propagation Experiments

    Science.gov (United States)

    Simmons, Rainee N.; Wintucky, Edwin G.

    2012-01-01

    In this paper, the design of a beacon transmitter that will be flown as a hosted payload on a geostationary satellite to enable propagation experiments at Q-band (37-41 GHz) frequencies is presented. The beacon uses a phased locked loop stabilized dielectric resonator oscillator and a solid-state power amplifier to achieve the desired output power. The satellite beacon antenna is configured as an offset-fed cut-paraboloidal reflector.

  19. A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

    Energy Technology Data Exchange (ETDEWEB)

    Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

    1993-05-01

    A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

  20. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

  1. Maximizing power output from continuous-wave single-frequency fiber amplifiers.

    Science.gov (United States)

    Ward, Benjamin G

    2015-02-15

    This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

  2. Mars Global Surveyor Ka-Band Frequency Data Analysis

    Science.gov (United States)

    Morabito, D.; Butman, S.; Shambayati, S.

    2000-01-01

    The Mars Global Surveyor (MGS) spacecraft, launched on November 7, 1996, carries an experimental space-to-ground telecommunications link at Ka-band (32 GHz) along with the primary X-band (8.4 GHz) downlink. The signals are simultaneously transmitted from a 1.5-in diameter parabolic high gain antenna (HGA) on MGS and received by a beam-waveguide (BWG) R&D 34-meter antenna located in NASA's Goldstone Deep Space Network (DSN) complex near Barstow, California. The projected 5-dB link advantage of Ka-band relative to X-band was confirmed in previous reports using measurements of MGS signal strength data acquired during the first two years of the link experiment from December 1996 to December 1998. Analysis of X-band and Ka-band frequency data and difference frequency (fx-fka)/3.8 data will be presented here. On board the spacecraft, a low-power sample of the X-band downlink from the transponder is upconverted to 32 GHz, the Ka-band frequency, amplified to I-W using a Solid State Power Amplifier, and radiated from the dual X/Ka HGA. The X-band signal is amplified by one of two 25 W TWTAs. An upconverter first downconverts the 8.42 GHz X-band signal to 8 GHz and then multiplies using a X4 multiplier producing the 32 GHz Ka-band frequency. The frequency source selection is performed by an RF switch which can be commanded to select a VCO (Voltage Controlled Oscillator) or USO (Ultra-Stable Oscillator) reference. The Ka-band frequency can be either coherent with the X-band downlink reference or a hybrid combination of the USO and VCO derived frequencies. The data in this study were chosen such that the Ka-band signal is purely coherent with the X-band signal, that is the downconverter is driven by the same frequency source as the X-band downlink). The ground station used to acquire the data is DSS-13, a 34-meter BWG antenna which incorporates a series of mirrors inside beam waveguide tubes which guide the energy to a subterranean pedestal room, providing a stable environment

  3. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  4. Study of the Powerful Nd:YLF Laser Amplifiers for the CTF3 Photoinjectors

    CERN Document Server

    Petrarca, M; Luchinin, G; Divall, M

    2011-01-01

    A high-power neodymium-doped yttrium lithium fluoride (Nd:YLF) mode-locked 1.5-GHz laser currently used to drive the two photoinjectors of the Compact Linear Collider Test Facility project at the European Organization for Nuclear Research is described. A phenomenological characterization of the two powerful Nd:YLF amplifiers is presented and compared with the measurements. The laser system operates in a saturated steady-state mode. This mode provides good shot-to-shot stability with pulse train mean power in the 10 kW range.

  5. Challenges in higher order mode Raman amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

    2015-01-01

    A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

  6. A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

    International Nuclear Information System (INIS)

    Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

    1990-01-01

    A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λ ω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

  7. Inter simple sequence repeats (ISSR) and random amplified ...

    African Journals Online (AJOL)

    21 of 30 random amplified polymorphic DNA (RAPD) primers produced 220 reproducible bands with average of 10.47 bands per primer and 80.12% of polymorphism. OPR02 primer showed the highest number of effective allele (Ne), Shannon index (I) and genetic diversity (H). Some of the cultivars had specific bands, ...

  8. Electrospun amplified fiber optics.

    Science.gov (United States)

    Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

    2015-03-11

    All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

  9. Fiber-Amplifier-Enhanced QEPAS Sensor for Simultaneous Trace Gas Detection of NH3 and H2S

    Directory of Open Access Journals (Sweden)

    Hongpeng Wu

    2015-10-01

    Full Text Available A selective and sensitive quartz enhanced photoacoustic spectroscopy (QEPAS sensor, employing an erbium-doped fiber amplifier (EDFA, and a distributed feedback (DFB laser operating at 1582 nm was demonstrated for simultaneous detection of ammonia (NH3 and hydrogen sulfide (H2S. Two interference-free absorption lines located at 6322.45 cm−1 and 6328.88 cm−1 for NH3 and H2S detection, respectively, were identified. The sensor was optimized in terms of current modulation depth for both of the two target gases. An electrical modulation cancellation unit was equipped to suppress the background noise caused by the stray light. An Allan-Werle variance analysis was performed to investigate the long-term performance of the fiber-amplifier-enhanced QEPAS sensor. Benefitting from the high power boosted by the EDFA, a detection sensitivity (1σ of 52 parts per billion by volume (ppbv and 17 ppbv for NH3 and H2S, respectively, were achieved with a 132 s data acquisition time at atmospheric pressure and room temperature.

  10. Fiber-Amplifier-Enhanced QEPAS Sensor for Simultaneous Trace Gas Detection of NH3 and H2S

    Science.gov (United States)

    Wu, Hongpeng; Dong, Lei; Liu, Xiaoli; Zheng, Huadan; Yin, Xukun; Ma, Weiguang; Zhang, Lei; Yin, Wangbao; Jia, Suotang

    2015-01-01

    A selective and sensitive quartz enhanced photoacoustic spectroscopy (QEPAS) sensor, employing an erbium-doped fiber amplifier (EDFA), and a distributed feedback (DFB) laser operating at 1582 nm was demonstrated for simultaneous detection of ammonia (NH3) and hydrogen sulfide (H2S). Two interference-free absorption lines located at 6322.45 cm−1 and 6328.88 cm−1 for NH3 and H2S detection, respectively, were identified. The sensor was optimized in terms of current modulation depth for both of the two target gases. An electrical modulation cancellation unit was equipped to suppress the background noise caused by the stray light. An Allan-Werle variance analysis was performed to investigate the long-term performance of the fiber-amplifier-enhanced QEPAS sensor. Benefitting from the high power boosted by the EDFA, a detection sensitivity (1σ) of 52 parts per billion by volume (ppbv) and 17 ppbv for NH3 and H2S, respectively, were achieved with a 132 s data acquisition time at atmospheric pressure and room temperature. PMID:26506351

  11. 25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

    International Nuclear Information System (INIS)

    Zeghuzi, A.; Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

    2015-01-01

    Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation

  12. Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

    Directory of Open Access Journals (Sweden)

    M. Schleyer

    2017-09-01

    Full Text Available This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

  13. X-band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

    NARCIS (Netherlands)

    Janssen, J.P.B.; Heijningen, M. van; Provenzano, G.; Visser, G.C.; Morvan, E.; Vliet, F.E. van

    2008-01-01

    Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of

  14. X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

    NARCIS (Netherlands)

    Janssen, J.P.B.; van Heijningen, M; Provenzano, G.; van Vliet, Frank Edward

    2008-01-01

    Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two

  15. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  16. Development of the high-power THz spectroscopy and imaging systems on the basis of an S-band compact electron LINAC

    International Nuclear Information System (INIS)

    Kuroda, R.; Taira, Y.; Tanaka, M.; Toyokawa, H.; Yamada, K.; Kumaki, M.; Tachibana, M.; Sakaue, K.; Washio, M.

    2014-01-01

    The high-power terahertz time-domain spectroscopy (THz-TDS) and imaging systems have been developed on the basis of an S-band compact electron linac at AIST. Such high-power THz source is strongly expected for inspection of dangerous materials in the homeland security field. The high-power THz radiations are generated in two methods with the high-brightness ultra-short electron bunch. One is THz coherent synchrotron radiation (THz-CSR) for THz imaging applications. The other is THz coherent transition radiation (THz-CTR) for the THz spectroscopy. The THz-CTR time-domain spectroscopy (TDS) has been constructed with the EO sampling method and demonstrated in freq. range between 0.1-2 THz. The absorption measurements of drug samples have been successfully performed in atmosphere. In this symposium, we will describe details of the THz-CTR-TDS and imaging experiments and a future plan of the THz applications. (author)

  17. Novel O-band tunable fiber laser using an array waveguide grating

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Latif, A A; Harun, S W

    2010-01-01

    A novel tunable fibre laser (TFL) operating in the ordinary band (O-band) of 1310 nm is proposed and demonstrated. The proposed TFL is developed using a 1×16 arrayed waveguide grating (AWG) as a slicing mechanism for the broadband amplified spontaneous emission (ASE) source and an optical channel selector (OCS) to provide the tunability. A semiconductor optical amplifier (SOA) with a centre wavelength of 1310 nm serves as the compact gain medium for the TFL and also as a broadband ASE source. The TFL has a tuning range of 1301.26 nm to 1311.18 nm with 9.92 nm span and a channel spacing of 0.7 nm. The measured output power is about –4 and –8 dBm and with a side node suppression ratio (SMSR) of 29 to 33 dB

  18. Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

    KAUST Repository

    Rao, Anlei

    2012-09-08

    It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available, the performance may degrade significantly, and as such robust power allocation schemes have been developed to minimize the effects of this degradation. In this paper, we investigate power allocation strategies for multicarrier systems, in which each subcarrier employs single amplify-and-forward (AF) relaying scheme. Optimal power allocation schemes are proposed by maximizing the approximated channel capacity under aggregate power constraint (APC) and separate power constraint (SPC). By comparison with the uniform power allocation scheme and the best channel power allocation scheme, we confirm that both the APC and SPC schemes achieve a performance gain over benchmark schemes. In addition, the impact of channel uncertainty is also considered in this paper by modeling the uncertainty regions as bounded sets, and results show that the uncertainty can degrade the worst-case performance significantly.

  19. Design and development of a 6 MW peak, 24 kW average power S-band klystron

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, L.M.; Meena, Rakesh; Nangru, Subhash; Kant, Deepender; Pal, Debashis; Lamba, O.S.; Jindal, Vishnu; Jangid, Sushil Kumar, E-mail: joslm@rediffmail.com [Central Electronics Engineering Research Institute, Council of Scientific and Industrial Research, Pilani (India); Chakravarthy, D.P.; Dixit, Kavita [Bhabha Atomic Research Centre, Mumbai (India)

    2011-07-01

    A 6 MW peak, 24 kW average power S-band Klystron is under development at CEERI, Pilani under an MoU between BARC and CEERI. The design of the klystron has been completed. The electron gun has been designed using TRAK and MAGIC codes. RF cavities have been designed using HFSS and CST Microwave Studio while the complete beam wave interaction simulation has been done using MAGIC code. The thermal design of collector and RF window has been done using ANSYS code. A Gun Collector Test Module (GCTM) was developed before making actual klystron to validate gun perveance and thermal design of collector. A high voltage solid state pulsed modulator has been installed for performance valuation of the tube. The paper will cover the design aspects of the tube and experimental test results of GCTM and klystron. (author)

  20. Design and development of a 6 MW peak, 24 kW average power S-band klystron

    International Nuclear Information System (INIS)

    Joshi, L.M.; Meena, Rakesh; Nangru, Subhash; Kant, Deepender; Pal, Debashis; Lamba, O.S.; Jindal, Vishnu; Jangid, Sushil Kumar; Chakravarthy, D.P.; Dixit, Kavita

    2011-01-01

    A 6 MW peak, 24 kW average power S-band Klystron is under development at CEERI, Pilani under an MoU between BARC and CEERI. The design of the klystron has been completed. The electron gun has been designed using TRAK and MAGIC codes. RF cavities have been designed using HFSS and CST Microwave Studio while the complete beam wave interaction simulation has been done using MAGIC code. The thermal design of collector and RF window has been done using ANSYS code. A Gun Collector Test Module (GCTM) was developed before making actual klystron to validate gun perveance and thermal design of collector. A high voltage solid state pulsed modulator has been installed for performance valuation of the tube. The paper will cover the design aspects of the tube and experimental test results of GCTM and klystron. (author)

  1. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

    2009-06-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  2. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    International Nuclear Information System (INIS)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

    2009-01-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  3. High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

    Science.gov (United States)

    Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

    2017-10-01

    With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

  4. An ultra-low-power pulse oximeter implemented with an energy-efficient transimpedance amplifier.

    Science.gov (United States)

    Tavakoli, M; Turicchia, L; Sarpeshkar, R

    2010-02-01

    Pulse oximeters are ubiquitous in modern medicine to noninvasively measure the percentage of oxygenated hemoglobin in a patient's blood by comparing the transmission characteristics of red and infrared light-emitting diode light through the patient's finger with a photoreceptor. We present an analog single-chip pulse oximeter with 4.8-mW total power dissipation, which is an order of magnitude below our measurements on commercial implementations. The majority of this power reduction is due to the use of a novel logarithmic transimpedance amplifier with inherent contrast sensitivity, distributed amplification, unilateralization, and automatic loop gain control. The transimpedance amplifier, together with a photodiode current source, form a high-performance photoreceptor with characteristics similar to those found in nature, which allows LED power to be reduced. Therefore, our oximeter is well suited for portable medical applications, such as continuous home-care monitoring for elderly or chronic patients, emergency patient transport, remote soldier monitoring, and wireless medical sensing. Furthermore, our design obviates the need for an A-to-D and digital signal processor and leads to a small single-chip solution. We outline how extensions of our work could lead to submilliwatt oximeters.

  5. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    Science.gov (United States)

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

  6. Q-Band (37 to 41 GHz) Satellite Beacon Architecture for RF Propagation Experiments

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.

    2014-01-01

    In this paper, the design of a beacon transmitter that will be flown as a hosted payload on a geostationary satellite to enable propagation experiments at Q-band (37 to 41 GHz) frequencies is presented. The beacon uses a phased locked loop stabilized dielectric resonator oscillator and a solid-state power amplifier to achieve the desired output power. The satellite beacon antenna is configured as an offset-fed cutparaboloidal reflector.

  7. Low-Power Amplifier-Discriminators for High Time Resolution Detection

    CERN Document Server

    Despeisse, M; Anghinolfi, F; Tiuraniemi, S; Osmic, F; Riedler, P; Kluge, A; Ceccucci, A

    2009-01-01

    Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 mu W per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in h...

  8. Polynucleotide probes that target a hypervariable region of 16S rRNA genes to identify bacterial isolates corresponding to bands of community fingerprints.

    Science.gov (United States)

    Heuer, H; Hartung, K; Wieland, G; Kramer, I; Smalla, K

    1999-03-01

    Temperature gradient gel electrophoresis (TGGE) is well suited for fingerprinting bacterial communities by separating PCR-amplified fragments of 16S rRNA genes (16S ribosomal DNA [rDNA]). A strategy was developed and was generally applicable for linking 16S rDNA from community fingerprints to pure culture isolates from the same habitat. For this, digoxigenin-labeled polynucleotide probes were generated by PCR, using bands excised from TGGE community fingerprints as a template, and applied in hybridizations with dot blotted 16S rDNA amplified from bacterial isolates. Within 16S rDNA, the hypervariable V6 region, corresponding to positions 984 to 1047 (Escherichia coli 16S rDNA sequence), which is a subset of the region used for TGGE (positions 968 to 1401), best met the criteria of high phylogenetic variability, required for sufficient probe specificity, and closely flanking conserved priming sites for amplification. Removal of flanking conserved bases was necessary to enable the differentiation of closely related species. This was achieved by 5' exonuclease digestion, terminated by phosphorothioate bonds which were synthesized into the primers. The remaining complementary strand was removed by single-strand-specific digestion. Standard hybridization with truncated probes allowed differentiation of bacteria which differed by only two bases within the probe target site and 1.2% within the complete 16S rDNA. However, a truncated probe, derived from an excised TGGE band of a rhizosphere community, hybridized with three phylogenetically related isolates with identical V6 sequences. Only one of the isolates comigrated with the excised band in TGGE, which was shown to be due to identical sequences, demonstrating the utility of a combined TGGE and V6 probe approach.

  9. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar; Alouini, Mohamed-Slim; Chen, Yunfei; Radaydeh, Redha M.

    2012-01-01

    In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized

  10. Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

    KAUST Repository

    Zafar, Ammar

    2013-06-01

    In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

  11. Spectral Analysis of Polynomial Nonlinearity with Applications to RF Power Amplifiers

    Directory of Open Access Journals (Sweden)

    G. Tong Zhou

    2004-09-01

    Full Text Available The majority of the nonlinearity in a communication system is attributed to the power amplifier (PA present at the final stage of the transmitter chain. In this paper, we consider Gaussian distributed input signals (such as OFDM, and PAs that can be modeled by memoryless or memory polynomials. We derive closed-form expressions of the PA output power spectral density, for an arbitrary nonlinear order, based on the so-called Leonov-Shiryaev formula. We then apply these results to answer practical questions such as the contribution of AM/PM conversion to spectral regrowth and the relationship between memory effects and spectral asymmetry.

  12. Design of band-pass push-pull stages of power amplifiers for UHF transmitters of FM and TV broadcasting

    OpenAIRE

    Titov, A. A.

    2005-01-01

    The paper considers principles of construction, peculiarities of design, and techniques of network element calculation of push-pull amplification stages in linear bipolar microwave transistors. An example of calculation and results of experimental tests of an amplifier for transmitters of FM and TV broadcasting are presented.

  13. Cusp-latitude Pc3 spectra: band-limited and power-law components

    Directory of Open Access Journals (Sweden)

    P. V. Ponomarenko

    Full Text Available This work attempts to fill a gap in comparative studies of upstream-generated Pc3–4 waves and broad band ULF noise observed at cusp latitudes. We performed a statistical analysis of the spectral properties of three years of cusp-latitude ground magnetometer data, finding that the average daytime Pc3–4 spectra are characterized by two principal components: an upstream-related band-limited enhancement (‘signal’ and a power-law background (‘noise’ with S(f a  f -4 . Based on this information we developed an algorithm allowing for the deconvolution of these two components in the spectral domain. The frequency of the signal enhancement increases linearly with IMF magnitude as f [mHz] ~ 4.4 | BIMF | [nT], and its power maximizes around IMF cone angles qxB ~ 20 and 160° and at 10:30–11:00 MLT. Both spectral components exhibit similar semiannual variations with equinoctial maxima. The back-ground noise power grows with increasing southward Bz and remains nearly constant for northward Bz . Its diurnal variation resembles that of Pc5 field-line resonance power, with a maximum near 09:00 MLT. Both the band-limited signal and broad band noise components show power-law growth with solar wind velocity a V 5.71sw and a V 4.12sw, respectively. Thus, the effective signal-to-noise ratio increases with in-creasing Vsw. The observations suggest that the noise generation is associated with reconnection processes.

    Key words. Magnetospheric physics (magnetopause, cusp, and boundary layers; MHD waves and instabilities; solar wind magnetosphere interactions

  14. Efficiency Optimization in Class-D Audio Amplifiers

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2015-01-01

    This paper presents a new power efficiency optimization routine for designing Class-D audio amplifiers. The proposed optimization procedure finds design parameters for the power stage and the output filter, and the optimum switching frequency such that the weighted power losses are minimized under...... the given constraints. The optimization routine is applied to minimize the power losses in a 130 W class-D audio amplifier based on consumer behavior investigations, where the amplifier operates at idle and low power levels most of the time. Experimental results demonstrate that the optimization method can...... lead to around 30 % of efficiency improvement at 1.3 W output power without significant effects on both audio performance and the efficiency at high power levels....

  15. High-powered, solid-state rf systems

    International Nuclear Information System (INIS)

    Reid, D.W.

    1987-01-01

    Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

  16. True photonic band-gap mode-control in VCSEL structures

    DEFF Research Database (Denmark)

    Romstad, F.; Madsen, M.; Birkedal, Dan

    2003-01-01

    Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

  17. Solid State KA-Band, Solid State W-Band and TWT Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Phase I of the proposal describes plans to develop a state of the art transmitter for the W-Band and KA -Band Cloud Radar system. Our focus will be concentrated in...

  18. Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

    2013-01-01

    A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

  19. A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

    Science.gov (United States)

    Guo, Jiarong

    2017-04-01

    A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

  20. Transmission characteristics of acoustic amplifier in thermoacoustic engine

    International Nuclear Information System (INIS)

    Sun Daming; Qiu Limin; Wang Bo; Xiao Yong

    2008-01-01

    Thermoacoustic engines are promising in practical applications for the merits of simple configuration, reliable operation and environmentally friendly working gas. An acoustic amplifier can increase the output pressure amplitude of a thermoacoustic engine (TE) and improve the matching between the engine and its load. In order to make full use of an acoustic amplifier, the transmission characteristics are studied based on linear thermoacoustic theory. Computational and experimental results show that the amplifying ability of an acoustic amplifier is mainly determined by its geometry parameters and output resistance impedance. The amplifying ability of an acoustic amplifier with appropriate length and diameter reaches its maximum when the output resistance impedance is infinite. It is also shown that the acoustic amplifier consumes an amount of acoustic power when amplifying pressure amplitude and the acoustic power consumption increases with amplifying ratio. Furthermore, a novel cascade acoustic amplifier is proposed, which has a much stronger amplifying ability with reduced acoustic power consumption. In experiments, a two-stage cascade acoustic amplifier amplifies the pressure ratio from 1.177 to 1.62 and produces a pressure amplitude of 0.547 MPa with nitrogen of 2.20 MPa as working gas. Good agreements are obtained between the theoretical analysis and experimental results. This research is instructive for comprehensively understanding the mechanism and making full use of the acoustic amplifier

  1. A low power and low distortion rail-to-rail input/output amplifier using constant current technique

    International Nuclear Information System (INIS)

    Liu Yan; Zhao Yiqiang; Zhang Shilin; Zhao Hongliang

    2011-01-01

    A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 x 183 μm 2 . Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz. (semiconductor integrated circuits)

  2. Efficiency Enhancement of an Envelope Tracking Power Amplifier Combining Supply Shaping and Dynamic Biasing

    DEFF Research Database (Denmark)

    Tafuri, Felice Francesco; Sira, Daniel; Jensen, Ole Kiel

    2013-01-01

    This paper presents a new method to improve the performance of envelope tracking (ET) power amplifiers (PAs). The method consists of combining the supply modulation that characterizes the envelope tracking architecture with supply shaping and dynamic biasing. The inclusion of dynamic biasing allo...

  3. Portable musical instrument amplifier

    Science.gov (United States)

    Christian, David E.

    1990-07-24

    The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

  4. Generation of nanosecond S band microwave pulses based on superradiance

    International Nuclear Information System (INIS)

    Ginzburg, N.S.; Zotova, I.V.; Rozental, R.M.

    2002-01-01

    Modeling carried out demonstrates possibility of generation of gigawatt power level S band microwave pulse with duration of several nanoseconds using superradiation of short electron beam moving along slow-wave periodical structure. A 10 ns / 500 keV / 5 kA accelerator of Kanazawa University can be used in such experiments. It is shown that significant increasing peak power can be obtained by optimization of voltage and current pulses waveforms. Required increasing of electron energy and current by the end of electron pulse can be achieved by using self-acceleration of a short beam passing through a system of passive cavities. (author)

  5. Generation of nanosecond S band microwave pulses based on superradiance

    Energy Technology Data Exchange (ETDEWEB)

    Ginzburg, N.S.; Zotova, I.V.; Rozental, R.M. [Russian Academy of Science, Institute of Applied Physics, Nizhny Novgorod (RU)] [and others

    2002-06-01

    Modeling carried out demonstrates possibility of generation of gigawatt power level S band microwave pulse with duration of several nanoseconds using superradiation of short electron beam moving along slow-wave periodical structure. A 10 ns / 500 keV / 5 kA accelerator of Kanazawa University can be used in such experiments. It is shown that significant increasing peak power can be obtained by optimization of voltage and current pulses waveforms. Required increasing of electron energy and current by the end of electron pulse can be achieved by using self-acceleration of a short beam passing through a system of passive cavities. (author)

  6. Single conversion stage amplifier - SICAM

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2005-12-15

    This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

  7. Distributed amplifier using Josephson vortex flow transistors

    International Nuclear Information System (INIS)

    McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

    1986-01-01

    A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

  8. Dynamic range enhancement and amplitude regeneration in single pump fibre optic parametric amplifiers using DPSK modulation

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Lorenzen, Michael Rodas; Seoane, Jorge

    2008-01-01

    Input power dynamic range enhancement and amplitude regeneration of highly distorted signals are demonstrated experimentally for 40 Gbit/s RZ-DPSK in a single-pump fibre parametric amplifier with 22 dB smallsignal gain.......Input power dynamic range enhancement and amplitude regeneration of highly distorted signals are demonstrated experimentally for 40 Gbit/s RZ-DPSK in a single-pump fibre parametric amplifier with 22 dB smallsignal gain....

  9. Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

    International Nuclear Information System (INIS)

    Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

    2014-01-01

    Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

  10. Cathode-follower power amplifier

    International Nuclear Information System (INIS)

    Giordano, S.; Puglisi, M.

    1983-01-01

    In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

  11. The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

    Science.gov (United States)

    Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

    2018-04-01

    The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

  12. Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

    International Nuclear Information System (INIS)

    Vladimir Popov

    2003-01-01

    A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

  13. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  14. Evaluation of genetic diversity in Chinese kale (Brassica oleracea L. var. alboglabra Bailey) by using rapid amplified polymorphic DNA and sequence-related amplified polymorphism markers.

    Science.gov (United States)

    Zhang, J; Zhang, L G

    2014-02-14

    Chinese kale is an original Chinese vegetable of the Cruciferae family. To select suitable parents for hybrid breeding, we thoroughly analyzed the genetic diversity of Chinese kale. Random amplified polymorphic DNA (RAPD) and sequence-related amplified polymorphism (SRAP) molecular markers were used to evaluate the genetic diversity across 21 Chinese kale accessions from AVRDC and Guangzhou in China. A total of 104 bands were detected by 11 RAPD primers, of which 66 (63.5%) were polymorphic, and 229 polymorphic bands (68.4%) were observed in 335 bands amplified by 17 SRAP primer combinations. The dendrogram showed the grouping of the 21 accessions into 4 main clusters based on RAPD data, and into 6 clusters based on SRAP and combined data (RAPD + SRAP). The clustering of accessions based on SRAP data was consistent with petal colors. The Mantel test indicated a poor fit for the RAPD and SRAP data (r = 0.16). These results have an important implication for Chinese kale germplasm characterization and improvement.

  15. High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

    Science.gov (United States)

    Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

    2018-03-01

    A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

  16. 47 CFR 97.315 - Certification of external RF power amplifiers.

    Science.gov (United States)

    2010-10-01

    .... (2) The amplifier was manufactured before April 28, 1978, and has been issued a marketing waiver by... that operator's station. (3) The amplifier is sold to an amateur radio operator or to a dealer, the amplifier is purchased in used condition by a dealer, or the amplifier is sold to an amateur radio operator...

  17. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    International Nuclear Information System (INIS)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-01-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

  18. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    Science.gov (United States)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-05-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

  19. Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications

    International Nuclear Information System (INIS)

    Zhang Meng; Li Zhiqun

    2012-01-01

    This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18 μm RF CMOS process. A two-stage cross-coupling cascaded common-gate (CG) topology has been designed as the amplifier. The first stage is a capacitive cross-coupling topology. It can reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology, used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA. A differential inductor has been designed as the load to achieve reasonable gain. This inductor has been simulated by the means of momentum electromagnetic simulation in ADS. A 'π' circuit model has been built as the inductor model by iteration in ADS. The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured. The LNA works well centered at 2.44 GHz. The measured gain S 21 is variable with high gain at 16.8 dB and low gain at 1 dB. The NF (noise figure) at high gain mode is 3.6 dB, the input referenced 1 dB compression point (IP1dB) is about −8 dBm and the IIP3 is 2 dBm at low gain mode. The LNA consumes about 1.2 mA current from 1.8 V power supply.

  20. Analysis of microwave amplifier and frequency multiplier tube with a multipactor electron gun

    International Nuclear Information System (INIS)

    Yokoo, Kuniyoshi; Ono, Shoichi; Tai, Dong-Zhe.

    1983-01-01

    The performance analysis was made for a multipactor microwave tube with the aim of realizing a microwave amplifier or a frequency multiplier tube with a multipactor cathode with high efficiency and high power. The possibility for producing the multipactor tube with high efficiency and high power was shown by using effectively the characteristics of the multipactor cathode which emits pulsed electron current with narrow band, synchronizing with high frequency period. As the operating conditions for the multipactor cathode, it was shown that the wide spacing of the cathode was needed for the operation in high operating power, and the narrow spacing was needed for the operation in high efficiency and for reducing power consumption. It was also shown that there were the best values of the high-frequency voltage for the cathode operation. The study by the simulation for the multipactor cathode and for the acceleration zone of electron current was also performed to examine the possible performance for a microwave amplifier and a frequency multiplier tube. For the use of the multipactor cathode with a spacing of 1 mm, the conversion efficiency for d. c. input power was 86, 56 and 31 % for the primary, the secondary and the tertiary harmonic wave amplifications, respectively. (Asami, T.)

  1. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2015-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...

  2. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  3. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  4. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice......Audio reproduction systems contains two key components, the amplifier and the loudspeaker. In the last 20 – 30 years the technology of audio amplifiers have performed a fundamental shift of paradigm. Class D audio amplifiers have replaced the linear amplifiers, suffering from the well-known issues...... with the low level of acoustical output power and complex amplifier requirements, have limited the commercial success of the technology. Horn or compression drivers are typically favoured, when high acoustic output power is required, this is however at the expense of significant distortion combined...

  5. Compact fibre-laser-pumped Ho:YLF oscillator–amplifier system

    CSIR Research Space (South Africa)

    Koen, W

    2010-04-01

    Full Text Available of the amplifier crystal L and the pump spot radius wp ( Ω = 2pi · (1 − cosβ), with β = tan−1(wpL )). Calculating the local population in (3) and iterating (6) and (11) along the length of the amplifier crystal, we obtain the extracted photon densities...-pumped tunable Tm: silica- fibre laser. Appl. Phys. B 79, 559 (2004) 6. E. Lippert, S. Nicolas, G. Arisholm, K. Stenersen, G. Rustad, Mid- infrared laser source with high power and beam quality. Appl. Opt. 45, 3839 (2006) 7. S.A. Payne, L.L. Chase, L...

  6. Amplified Photon Upconversion by Photonic Shell of Cholesteric Liquid Crystals.

    Science.gov (United States)

    Kang, Ji-Hwan; Kim, Shin-Hyun; Fernandez-Nieves, Alberto; Reichmanis, Elsa

    2017-04-26

    As an effective platform to exploit triplet-triplet-annihilation-based photon upconversion (TTA-UC), microcapsules composed of a fluidic UC core and photonic shell are microfluidically prepared using a triple emulsion as the template. The photonic shell consists of cholesteric liquid crystals (CLCs) with a periodic helical structure, exhibiting a photonic band gap. Combined with planar anchoring at the boundaries, the shell serves as a resonance cavity for TTA-UC emission and enables spectral tuning of the UC under low-power-density excitation. The CLC shell can be stabilized by introducing a polymerizable mesogen in the LC host. Because of the microcapsule spherical symmetry, spontaneous emission of the delayed fluorescence is omnidirectionally amplified at the edge of the stop band. These results demonstrate the range of opportunities provided by TTA-UC systems for the future design of low-threshold photonic devices.

  7. Phase-stable, multi-µJ femtosecond pulses from a repetition-rate tunable Ti:Sa-oscillator-seeded Yb-fiber amplifier

    Science.gov (United States)

    Saule, T.; Holzberger, S.; De Vries, O.; Plötner, M.; Limpert, J.; Tünnermann, A.; Pupeza, I.

    2017-01-01

    We present a high-power, MHz-repetition-rate, phase-stable femtosecond laser system based on a phase-stabilized Ti:Sa oscillator and a multi-stage Yb-fiber chirped-pulse power amplifier. A 10-nm band around 1030 nm is split from the 7-fs oscillator output and serves as the seed for subsequent amplification by 54 dB to 80 W of average power. The µJ-level output is spectrally broadened in a solid-core fiber and compressed to 30 fs with chirped mirrors. A pulse picker prior to power amplification allows for decreasing the repetition rate from 74 MHz by a factor of up to 4 without affecting the pulse parameters. To compensate for phase jitter added by the amplifier to the feed-forward phase-stabilized seeding pulses, a self-referencing feed-back loop is implemented at the system output. An integrated out-of-loop phase noise of less than 100 mrad was measured in the band from 0.4 Hz to 400 kHz, which to the best of our knowledge corresponds to the highest phase stability ever demonstrated for high-power, multi-MHz-repetition-rate ultrafast lasers. This system will enable experiments in attosecond physics at unprecedented repetition rates, it offers ideal prerequisites for the generation and field-resolved electro-optical sampling of high-power, broadband infrared pulses, and it is suitable for phase-stable white light generation.

  8. High efficiency fourth-harmonic generation from nanosecond fiber master oscillator power amplifier

    Science.gov (United States)

    Mu, Xiaodong; Steinvurzel, Paul; Rose, Todd S.; Lotshaw, William T.; Beck, Steven M.; Clemmons, James H.

    2016-03-01

    We demonstrate high power, deep ultraviolet (DUV) conversion to 266 nm through frequency quadrupling of a nanosecond pulse width 1064 nm fiber master oscillator power amplifier (MOPA). The MOPA system uses an Yb-doped double-clad polarization-maintaining large mode area tapered fiber as the final gain stage to generate 0.5-mJ, 10 W, 1.7- ns single mode pulses at a repetition rate of 20 kHz with measured spectral bandwidth of 10.6 GHz (40 pm), and beam qualities of Mx 2=1.07 and My 2=1.03, respectively. Using LBO and BBO crystals for the second-harmonic generation (SHG) and fourth-harmonic generation (FHG), we have achieved 375 μJ (7.5 W) and 92.5 μJ (1.85 W) at wavelengths of 532 nm and 266 nm, respectively. To the best of our knowledge these are the highest narrowband infrared, green and UV pulse energies obtained to date from a fully spliced fiber amplifier. We also demonstrate high efficiency SHG and FHG with walk-off compensated (WOC) crystal pairs and tightly focused pump beam. An SHG efficiency of 75%, FHG efficiency of 47%, and an overall efficiency of 35% from 1064 nm to 266 nm are obtained.

  9. Practical considerations for integrating switch mode audio amplifiers and loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    An integration of electrodynamic loudspeakers and switch mode amplifiers has earlier been proposed in [1]. The work presented in this paper is related to the practical aspects of integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker’s voice coil as output...

  10. An audio FIR-DAC in a BCD process for high power Class-D amplifiers

    NARCIS (Netherlands)

    Doorn, T.S.; van Tuijl, Adrianus Johannes Maria; Schinkel, Daniel; Annema, Anne J.; Berkhout, M.; Berkhout, M.; Nauta, Bram

    A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant

  11. A Front End for Multipetawatt Lasers Based on a High-Energy, High-Average-Power Optical Parametric Chirped-Pulse Amplifier

    International Nuclear Information System (INIS)

    Bagnoud, V.

    2004-01-01

    We report on a high-energy, high-average-power optical parametric chirped-pulse amplifier developed as the front end for the OMEGA EP laser. The amplifier provides a gain larger than 109 in two stages leading to a total energy of 400 mJ with a pump-to-signal conversion efficiency higher than 25%

  12. Development and energization of IOT based RF amplifier

    International Nuclear Information System (INIS)

    Mandal, A.; Som, S.; Raj, P.R.; Manna, S.K.; Ghosh, S.; Seth, S.; Thakurta, S.; Thakur, S.K.; Saha, S.; Panda, U.S.

    2013-01-01

    A 704 MHz IOT based CW RF amplifier has been developed in VECC. It can also be used with proper tuning to power cavity modules operating at 650 MHz in high energy high intensity proton linear accelerator proposed to be built for ADSS/SNS programme in India and Project-X at Fermilab, USA. This IOT based amplifier provides up to 60 kW continuous wave RF power at 700 MHz. It required various power supplies, LCW cooling and forced air cooling for its operation. The auxiliary power supplies like Grid, Filament and Ion-pump, are floated and mounted on an isolated frame, i.e., HV deck. The mains inputs are electrically isolated by means of isolation transformer. Also, a Programmable Logic Controller (PLC) based interlocks along with high voltage collector power supply has been designed and developed for the safe operation of the RF amplifier. This paper discusses about various developments and energization of the IOT based RF amplifier with high power dummy load. (author)

  13. High Power Amplifiers Chain nonlinearity influence on the accelerating beam stability in free electron laser (FLASH)

    CERN Document Server

    Cichalewski, w

    2010-01-01

    The high power amplifiers transfer characteristics nonlinearities can have a negative influence on the overall system performance. This is also true for the TESLA superconducting cavities accelerating field parameters control systems. This Low Level Radio Frequency control systems uses microwave high power amplifiers (like 10 MW klystrons) as actuators in the mentioned feedback loops. The amplitude compression and phase deviations phenomena introduced to the control signals can reduce the feedback performance and cause electron beam energy instabilities. The transfer characteristics deviations in the Free Electron Laser in Hamburg experiment have been investigated. The outcome of this study together with the description of the developed linearization method based on the digital predistortion approach have been described in this paper. Additionally, the results from the linearization tool performance tests in the FLASH's RF systems have been placed.

  14. Cladding-pumped 70-kW-peak-power 2-ns-pulse Er-doped fiber amplifier

    Science.gov (United States)

    Khudyakov, M. M.; Bubnov, M. M.; Senatorov, A. K.; Lipatov, D. S.; Guryanov, A. N.; Rybaltovsky, A. A.; Butov, O. V.; Kotov, L. V.; Likhachev, M. E.

    2018-02-01

    An all-fiber pulsed erbium laser with pulse width of 2.4 ns working in a MOPA configuration has been created. Cladding pumped double clad erbium doped large mode area fiber was used in the final stage amplifier. Peculiarity of the current work is utilization of custom-made multimode diode wavelength stabilized at 981+/-0.5 nm - wavelength of maximum absorption by Er ions. It allowed us to shorten Er-doped fiber down to 1.7 m and keep a reasonably high pump-to signal conversion efficiency of 8.4%. The record output peak power for all-fiber amplifiers of 84 kW was achieved within 1555.9+/-0.15 nm spectral range.

  15. Continuously tunable S and C+L bands ultra wideband erbium-doped fiber ring laser

    International Nuclear Information System (INIS)

    Wang, Q; Yu, Q X

    2009-01-01

    This paper presents an ultra wideband tunable silica-based erbium doped fiber ring laser (EDFRL) that can be continuously tuned in S and C+L bands from 1475 to 1619 nm. It is the first time that a fiber ring laser's tuning range reaches 144 nm using a standard silica-based C-band erbium-doped fiber as gain media. In the laser configuration two isolators are used in the fiber loop for suppressing the ASE in C-band and elevating the lasing gain in S-band. As a result the available lasing wavelength is extended toward the shorter wavelength of the gain bandwidth. The optimized erbium-doped fiber length, output coupling ratio and pumping laser power have been obtained through experimental study. This ring fiber laser has simple configuration, low threshold, flat laser spectral distribution and high signal-to-ASE-noise ratio. The laser will have many potential applications in fiber sensor wavelength interrogation, high-resolution spectroscopy and fiber optic communications

  16. Solid state Ka-band pulse oscillator with frequency electronic switching

    Directory of Open Access Journals (Sweden)

    Dvornichenko V. P.

    2015-08-01

    Full Text Available Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pulse to pulse. The oscillator consists of a frequency synthesizer and a synchronized amplifier on the IMPATT diode. Reference oscillator of synthesizer is synchronized by crystal oscillator with digital PLL system and contains a frequency multiplier and an amplifier operating in pulse mode. Small-sized frequency synthesizer of 8 mm wave lengths provides an output power of ~1.2 W per pulse with a frequency stability of no worse than 2•10–6. Radiation frequency is controlled by three-digit binary code in OOL levels. Synchronized amplifier made on IMPATT diodes provides microwave power up to 20 W in oscillator output with microwave pulse duration of 100—300 ns in an operating band. The oscillator can be used as a driving source for the synchronization of semiconductor and electro-vacuum devices of pulsed mode, and also as a transmitting device for small-sized radar of millimeter wave range.

  17. 1.7  μm band narrow-linewidth tunable Raman fiber lasers pumped by spectrum-sliced amplified spontaneous emission.

    Science.gov (United States)

    Zhang, Peng; Wu, Di; Du, Quanli; Li, Xiaoyan; Han, Kexuan; Zhang, Lizhong; Wang, Tianshu; Jiang, Huilin

    2017-12-10

    A 1.7 μm band tunable narrow-linewidth Raman fiber laser based on spectrally sliced amplified spontaneous emission (SS-ASE) and multiple filter structures is proposed and experimentally demonstrated. In this scheme, an SS-ASE source is employed as a pump source in order to avoid stimulated Brillouin scattering. The ring configuration includes a 500 m long high nonlinear optical fiber and a 10 km long dispersion shifted fiber as the gain medium. A segment of un-pumped polarization-maintaining erbium-doped fiber is used to modify the shape of the spectrum. Furthermore, a nonlinear polarization rotation scheme is applied as the wavelength selector to generate lasers. A high-finesse ring filter and a ring filter are used to narrow the linewidth of the laser, respectively. We demonstrate tuning capabilities of a single laser over 28 nm between 1652 nm and 1680 nm by adjusting the polarization controller (PC) and tunable filter. The tunable laser has a 0.023 nm effective linewidth with the high-finesse ring filter. The stable multi-wavelength laser operation of up to four wavelengths can be obtained by adjusting the PC carefully when the pump power increases.

  18. Multipath interference test method for distributed amplifiers

    Science.gov (United States)

    Okada, Takahiro; Aida, Kazuo

    2005-12-01

    A method for testing distributed amplifiers is presented; the multipath interference (MPI) is detected as a beat spectrum between the multipath signal and the direct signal using a binary frequency shifted keying (FSK) test signal. The lightwave source is composed of a DFB-LD that is directly modulated by a pulse stream passing through an equalizer, and emits the FSK signal of the frequency deviation of about 430MHz at repetition rate of 80-100 kHz. The receiver consists of a photo-diode and an electrical spectrum analyzer (ESA). The base-band power spectrum peak appeared at the frequency of the FSK frequency deviation can be converted to amount of MPI using a calibration chart. The test method has improved the minimum detectable MPI as low as -70 dB, compared to that of -50 dB of the conventional test method. The detailed design and performance of the proposed method are discussed, including the MPI simulator for calibration procedure, computer simulations for evaluating the error caused by the FSK repetition rate and the fiber length under test and experiments on singlemode fibers and distributed Raman amplifier.

  19. On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

    International Nuclear Information System (INIS)

    Ren Zhixiong; Zhang Kefeng; Liu Lanqi; Li Cong; Chen Xiaofei; Liu Dongsheng; Liu Zhenglin; Zou Xuecheng

    2015-01-01

    Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer (PCT) and one 1.95 GHz PA using an on-chip series combining transformer (SCT) to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors (MGTR) and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE. (paper)

  20. Lower-power, high-linearity class-AB current-mode programmable gain amplifier

    International Nuclear Information System (INIS)

    Wu Yiqiang; Wang Zhigong; Wang Junliang; Ma Li; Xu Jian; Tang Lu

    2014-01-01

    A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides a current gain in a range of 40 dB with a 1 dB step. The CPGA is characterized by a wide range of current gain variation, a lower power dissipation, and a small chip size. The proposed circuit is fabricated using a 0.18 μm CMOS technology. The CPGA draws a current of less than 2.52 mA from a 1.8 V supply while occupying an active area of 0.099 μm 2 . The measured results show an overall gain variation from 10 to 50 dB with a gain error of less than 0.40 dB. The OP 1dB varies from 11.80 to 13.71 dBm, and the 3 dB bandwidth varies from 22.2 to 34.7 MHz over the whole gain range. (semiconductor integrated circuits)

  1. 500 MW peak power degenerated optical parametric amplifier delivering 52 fs pulses at 97 kHz repetition rate.

    Science.gov (United States)

    Rothhardt, J; Hädrich, S; Röser, F; Limpert, J; Tünnermann, A

    2008-06-09

    We present a high peak power degenerated parametric amplifier operating at 1030 nm and 97 kHz repetition rate. Pulses of a state-of-the art fiber chirped-pulse amplification (FCPA) system with 840 fs pulse duration and 410 microJ pulse energy are used as pump and seed source for a two stage optical parametric amplifier. Additional spectral broadening of the seed signal in a photonic crystal fiber creates enough bandwidth for ultrashort pulse generation. Subsequent amplification of the broadband seed signal in two 1 mm BBO crystals results in 41 microJ output pulse energy. Compression in a SF 11 prism compressor yields 37 microJ pulses as short as 52 fs. Thus, pulse shortening of more than one order of magnitude is achieved. Further scaling in terms of average power and pulse energy seems possible and will be discussed, since both concepts involved, the fiber laser and the parametric amplifier have the reputation to be immune against thermo-optical effects.

  2. Low noise amplifier for ZnS(Ag) scintillation chamber

    International Nuclear Information System (INIS)

    Do Hoang Cuong

    1998-01-01

    A new pulse amplifier that can be used with standard photomultiplier tubes coupled with Zn(Ag) scintillation chamber is presented. The amplifier based on an IC operational amplifier LF 356N consists of a low-noise charge sensitive preamplifier and pulse shaping circuits for optimization of signal to noise ratio. Temperature instability is ≤ 0.05%/ o C. Dynamic range for linear output signals is equal +7 V. The presented amplifier is used in a measuring head for 0.17 L Lucas chambers developed in Department of Nuclear Instruments and Methods of the INCT in laboratory investigations aimed to develop methods and instruments for measurement of radon concentration in the air. The amplifier can also be employed for measurement of ionizing radiation by means of other scintillators coupled to PM tube. The amplifier is followed by a pulse discriminator with adjustable discrimination level. The amplifier output signal and discriminator output pulses are fed to external devices. (author)

  3. CARM and harmonic gyro-amplifier experiments at 17 GHz

    International Nuclear Information System (INIS)

    Menninger, W.L.; Danly, B.G.; Alberti, S.; Chen, C.; Rullier, J.L.; Temkin, R.J.

    1993-01-01

    Cyclotron resonance maser amplifiers are possible sources for applications such as electron cyclotron resonance heating of fusion plasmas and driving high-gradient rf linear accelerators. For accelerator drivers, amplifiers or phase locked-oscillators are required. A 17 GHz cyclotron autoresonance maser (CARM) amplifier experiment and a 17 GHz third harmonic gyro-amplifier experiment are presently underway at the MIT Plasma Fusion Center. Using the SRL/MIT SNOMAD II introduction accelerator to provide a 380 kV, 180 A, 30 ns flat top electron beam, the gyro-amplifier experiment has produced 5 MW of rf power with over 50 dB of gain at 17 GHz. The gyro-amplifier operates in the TE 31 mode using a third harmonic interaction. Because of its high power output, the gyro-amplifier will be used as the rf source for a photocathode rf electron gun experiment also taking place at MIT. Preliminary gyro-amplifier results are presented, including measurement of rf power, gain versus interaction length, and the far-field pattern. A CARM experiment designed to operate in the TE 11 mode is also discussed

  4. [Study on sequence characterized amplified region (SCAR) markers of Cornus officinalis].

    Science.gov (United States)

    Chen, Suiqing; Lu, Xiaolei; Wang, Lili

    2011-05-01

    To establish sequence characterized amplified region markers of Cornus officinalis and provide a scientific basis for molecular identification of C. officinalis. The random primer was screened through RAPD to obtain specific RAPD marker bands. The RAPD marker bands were separated, extracted, cloned and sequenced. Both ends of the sequence of RAPD marker bands were determined. A pair of specific primers was designed for conventional PCR reaction, and SCAR marker was acquired. Four pairs of primers were designed based on the sequence of RAPD marker bands. The DNA of the seven varieties of C. officinalis was amplified by using YST38 and YST43 primer. The results showed that seven varieties of C. officinalis were able to produce a single PCR product. It was an effective way to identify C. officinalis. The varieties with cylindrical and long-pear shape fruits amplified by YST38 showed a specific band, which could be used as the evidence of variety identification. Seven varieties of C. oficinalis were amplified by using primer YST39. But the size of band of the variety with spindly shape fruit (35,0400 bp) was about 300 bp, which was shorter than those of the variety with the other shape fruits of C. officinalis (650-700 bp). The variety with the spindly shape fruit could be identified through this difference. The primer YST92 could produce a fragment from 600-700 bp in the varieties with cylindrical and long-pear shape fruits, a fragment from 200-300 bp in the varieties with oval and short-cylindrical shape fruits and had no fragment in the varieties with long cylindrical, elliptic and short-pear shape fruits, which could be used to select the different shapes of C. officinalis. SCAR mark is established and can be used as the basis for breeding and distinguishing the verieties of C. officinalis.

  5. Stimulated Brillouin scattering threshold in fiber amplifiers

    International Nuclear Information System (INIS)

    Liang Liping; Chang Liping

    2011-01-01

    Based on the wave coupling theory and the evolution model of the critical pump power (or Brillouin threshold) for stimulated Brillouin scattering (SBS) in double-clad fiber amplifiers, the influence of signal bandwidth, fiber-core diameter and amplifier gain on SBS threshold is simulated theoretically. And experimental measurements of SBS are presented in ytterbium-doped double-clad fiber amplifiers with single-frequency hundred nanosecond pulse amplification. Under different input signal pulses, the forward amplified pulse distortion is observed when the pulse energy is up to 660 nJ and the peak power is up to 3.3 W in the pulse amplification with pulse duration of 200 ns and repetition rate of 1 Hz. And the backward SBS narrow pulse appears. The pulse peak power equals to SBS threshold. Good agreement is shown between the modeled and experimental data. (authors)

  6. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  7. Low noise InP-based MMIC receivers for W-band

    Science.gov (United States)

    Leonard, Regis F.

    1991-01-01

    A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

  8. SiC MOSFET Switching Power Amplifier Project Summary

    Science.gov (United States)

    Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

    2017-10-01

    Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

  9. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Gao Tongqiang [Department of Electronics, Tsinghua University, Beijing 100084 (China); Zhang Chun; Chi Baoyong; Wang Zhihua, E-mail: gtq03@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2009-06-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-mum CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  10. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    International Nuclear Information System (INIS)

    Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

    2009-01-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  11. Design of a power amplifier for wireless communications using microstrip technology and Microwave Office

    Directory of Open Access Journals (Sweden)

    Christian Tipantuña

    2015-12-01

    Full Text Available This paper provides a detailed description and all the procedures involved in designing a power amplifier using microstrip technology and the design software Microwave OfficeTM. Specifically, the design is oriented to build an amplifier with central frequency at 14 GHz, but the same fundamentals and principles could be applied in the whole range of radio frequency. For the design, a MESFET transistor and simultaneous input and output matching networks are considered. The values of the parameters and the simulation for every stage are computed and performed using AWR Microwave OfficeTM. At the end of the document, a fully functional circuit layout represented in 2D and 3D is shown with all their complementary elements

  12. Integrated cladding-pumped multicore few-mode erbium-doped fibre amplifier for space-division-multiplexed communications

    Science.gov (United States)

    Chen, H.; Jin, C.; Huang, B.; Fontaine, N. K.; Ryf, R.; Shang, K.; Grégoire, N.; Morency, S.; Essiambre, R.-J.; Li, G.; Messaddeq, Y.; Larochelle, S.

    2016-08-01

    Space-division multiplexing (SDM), whereby multiple spatial channels in multimode and multicore optical fibres are used to increase the total transmission capacity per fibre, is being investigated to avert a data capacity crunch and reduce the cost per transmitted bit. With the number of channels employed in SDM transmission experiments continuing to rise, there is a requirement for integrated SDM components that are scalable. Here, we demonstrate a cladding-pumped SDM erbium-doped fibre amplifier (EDFA) that consists of six uncoupled multimode erbium-doped cores. Each core supports three spatial modes, which enables the EDFA to amplify a total of 18 spatial channels (six cores × three modes) simultaneously with a single pump diode and a complexity similar to a single-mode EDFA. The amplifier delivers >20 dBm total output power per core and <7 dB noise figure over the C-band. This cladding-pumped EDFA enables combined space-division and wavelength-division multiplexed transmission over multiple multimode fibre spans.

  13. Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers

    DEFF Research Database (Denmark)

    Lester, Christian; Bjarklev, Anders Overgaard; Rasmussen, Thomas

    1995-01-01

    A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths...

  14. Using theta and alpha band power to assess cognitive workload in multitasking environments.

    Science.gov (United States)

    Puma, Sébastien; Matton, Nadine; Paubel, Pierre-V; Raufaste, Éric; El-Yagoubi, Radouane

    2018-01-01

    Cognitive workload is of central importance in the fields of human factors and ergonomics. A reliable measurement of cognitive workload could allow for improvements in human machine interface designs and increase safety in several domains. At present, numerous studies have used electroencephalography (EEG) to assess cognitive workload, reporting the rise in cognitive workload to be associated with increases in theta band power and decreases in alpha band power. However, results have been inconsistent with some failing to reach the required level of significance. We hypothesized that the lack of consistency could be related to individual differences in task performance and/or to the small sample sizes in most EEG studies. In the present study we used EEG to assess the increase in cognitive workload occurring in a multitasking environment while taking into account differences in performance. Twenty participants completed a task commonly used in airline pilot recruitment, which included an increasing number of concurrent sub-tasks to be processed from one to four. Subjective ratings, performances scores, pupil size and EEG signals were recorded. Results showed that increases in EEG alpha and theta band power reflected increases in the involvement of cognitive resources for the completion of one to three subtasks in a multitasking environment. These values reached a ceiling when performances dropped. Consistent differences in levels of alpha and theta band power were associated to levels of task performance: highest performance was related to lowest band power. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

    Science.gov (United States)

    Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

    2012-05-01

    The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

  16. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

    International Nuclear Information System (INIS)

    Baillie, Devin; Aubin, J. St.; Fallone, B. G.; Steciw, S.

    2013-01-01

    Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d max is at 2.15 cm for a 10 × 10 cm 2 field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  17. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

    Science.gov (United States)

    Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

    2013-04-01

    To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  18. Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

    Energy Technology Data Exchange (ETDEWEB)

    Baillie, Devin [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Aubin, J. St. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Physics, University of Alberta, 11322-89 Avenue, Edmonton, Alberta T6G 2G7 (Canada); Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Steciw, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

    2013-04-15

    Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d{sub max} is at 2.15 cm for a 10 Multiplication-Sign 10 cm{sup 2} field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

  19. A 1microW 85nV/ radicalHz pseudo open-loop preamplifier with programmable band-pass filter for neural interface system.

    Science.gov (United States)

    Chang, Sun-Il; Yoon, Euisik

    2009-01-01

    We report an energy efficient pseudo open-loop amplifier with programmable band-pass filter developed for neural interface systems. The proposed amplifier consumes 400nA at 2.5V power supply. The measured thermal noise level is 85nV/ radicalHz and input-referred noise is 1.69microV(rms) from 0.3Hz to 1 kHz. The amplifier has a noise efficiency factor of 2.43, the lowest in the differential topologies reported up to date to our knowledge. By programming the switched-capacitor frequency and bias current, we could control the bandwidth of the preamplifier from 138 mHz to 2.2 kHz to meet various application requirements. The entire preamplifier including band-pass filters has been realized in a small area of 0.043mm(2) using a 0.25microm CMOS technology.

  20. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  1. Low Voltage Current-Reused Pseudo-Differential Programmable Gain Amplifier

    Science.gov (United States)

    Nguyen, Huy-Hieu; Lee, Jeong-Seon; Lee, Sang-Gug

    This paper reports a current-reused pseudo-differential (CRPD) programmable gain amplifier (PGA) that demonstrates small size, low power, wide band, low noise, and high linearity operation with 4 control bits. Implemented in 0.18um CMOS technology, the PGA shows the gain range from -9.9 to 8.3dB with gain error of less than ±0.38dB. The IIP3, P1dB, and smallest 3-dB bandwidth are 10.5 to 27dBm, -9 to 9.5dBm, and 250MHz, respectively. The PGA occupies the chip area of 0.04mm2 and consumes only 460 µA from a 1.2V supply.

  2. Cascade Structure of Digital Predistorter for Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    E. B. Solovyeva

    2015-12-01

    Full Text Available In this paper, a cascade structure of nonlinear digital predistorter (DPD synthesized by the direct learning adaptive algorithm is represented. DPD is used for linearization of power amplifier (PA characteristic, namely for compensation of PA nonlinear distortion. Blocks of the cascade DPD are described by different models: the functional link artificial neural network (FLANN, the polynomial perceptron network (PPN and the radially pruned Volterra model (RPVM. At synthesis of the cascade DPD there is possibility to overcome the ill conditionality problem due to reducing the dimension of DPD nonlinear operator approximation. Results of compensating nonlinear distortion in Wiener–Hammerstein model of PA at the GSM–signal with four carriers are shown. The highest accuracy of PA linearization is produced by the cascade DPD containing PPN and RPVM.

  3. Development of 650 MHz solid state RF amplifier for proton accelerator

    International Nuclear Information System (INIS)

    Jain, Akhilesh; Sharma, Deepak; Gupta, Alok; Tiwari, Ashish; Rao, Nageswar; Sekar, Vasanthi; Lad, M.; Hannurkar, P.R.; Gupta, P.D.

    2011-01-01

    Design and development of 30 kW high powers RF source at 650 MHz, using solid RF state technology, has been initiated at RRCAT. The indigenous technology development efforts will be useful for the proposed high power proton accelerators for SNS/ADS applications. In this 650 MHz amplifier scheme, 30 kW CW RF power will be generated using modular combination of 8 kW amplifier units. Necessary studies were carried out for device selection, choice of amplifier architecture and design of high power combiners and dividers. Presently RF amplifier delivering 250 W at 650 MHz has been fabricated and tested. Towards development of high power RF components, design and engineering prototyping of 16-port power combiner, directional coupler and RF dummy loads has been completed. The basic 8 kW amplifier unit is designed to provide power gain of 50 dB, bandwidth of 20 MHz and spurious response below 30 dB from fundamental signal. Based on the results of circuit simulation studies and engineering prototyping of amplifier module, two RF transistor viz. MRF3450 and MRF 61K were selected as solid state active devices. Impedance matching network in amplifier module is designed using balanced push pull configuration with transmission line BALUN. Due to high circulating current near drain side, metal clad RF capacitors were selected which helps in avoiding hot spot from output transmission path, ensuring continuous operation at rated RF power without damage to RF board. 350 W circulator is used to protect the RF devices from reflected power. Based on the prototype design and measured performance, one of these RF transistors will be selected to be used as workhorse for all amplifier modules. Two amplifier modules are mounted on water cooled copper heat-sink ensuring proper operating temperature for reliable and safe operation of amplifier. Also real time control system and data logger has been developed to provide DAQ and controls in each rack. For power combining and power measurement

  4. External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W is achie......A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W...... is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output...

  5. Gain-clamping techniques in two-stage double-pass L-band EDFA

    Indian Academy of Sciences (India)

    Two designs of long-wavelength band erbium-doped fiber amplifier (L-band. EDFA) for gain clamping in double-pass systems are demonstrated and compared. The first design is based on ring laser technique where a backward amplified spontaneous emis- sion (ASE) from the second stage is routed into the feedback loop ...

  6. High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

    Science.gov (United States)

    Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

    2005-04-01

    Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

  7. Final amplifier design and mercury

    International Nuclear Information System (INIS)

    Rose, E.A.; Hanson, D.E.

    1991-01-01

    The final amplifier for the Mercury KrF excimer facility is being designed. The design exercise involves extensive modeling to predict amplifier performance. Models of the pulsed-power system, including a Child-Langmuir diode with closure, electron-beam energy deposition, KrF laser kinetics, amplified spontaneous emission (ASE), a time-dependent laser extraction in the presence of ASE are presented as a design package. The design exercise indicates that the energy objective of Phase I -- 100 joules -- will be met

  8. Model of pulse extraction from a copper laser amplifier

    International Nuclear Information System (INIS)

    Boley, C.D.; Warner, B.E.

    1997-03-01

    A computational model of pulse propagation through a copper laser amplifier has been developed. The model contains a system of 1-D (in the axial direction), time-dependent equations for the laser intensity and amplified spontaneous emission (ASE), coupled to rate equations for the atomic levels. Detailed calculations are presented for a high-power amplifier at Lawrence Livermore National Laboratory. The extracted power agrees with experiment near saturation. At lower input power the calculation overestimates experiment, probably because of increased ASE effects. 6 refs., 6 figs

  9. Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

    KAUST Repository

    Benkhelifa, Fatma; Alouini, Mohamed-Slim

    2016-01-01

    In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

  10. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  11. Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

    KAUST Repository

    Benkhelifa, Fatma

    2016-01-06

    In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

  12. A Low-power CMOS BFSK Transceiver for Health Monitoring Systems.

    Science.gov (United States)

    Kim, Sungho; Lepkowski, William; Wilk, Seth J; Thornton, Trevor J; Bakkaloglu, Bertan

    2011-01-01

    A CMOS low-power transceiver for implantable and external health monitoring devices operating in the MICS band is presented. The LNA core has an integrated mixer in a folded configuration to reuse the bias current, allowing high linearity with a low power supply levels. The baseband strip consists of a pseudo differential MOS-C band-pass filter achieving demodulation of 150kHz-offset BFSK signals. An all digital frequency-locked loop is used for LO generation in the RX mode and for driving a class AB power amplifier in the TX mode. The MICS transceiver is designed and fabricated in a 0.18μm 1-poly, 6-metal CMOS process. The sensitivities of -70dBm and -98dBm were achieved with NF of 40dB and 11dB at the data rate of 100kb/s while consuming only 600μW and 1.5mW at 1.2V and 1.8V, respectively. The BERs are less than 10 -3 at the input powers of -70dBm at 1.2V and -98dBm at 1.8V at the data rate of 100kb/s. Finally, the output power of the transmitter is 0dBm for a power consumption of 1.8mW.

  13. The Keenan and Wing bands in S stars

    International Nuclear Information System (INIS)

    Lambert, D.L.; Clegg, R.E.S.

    1980-01-01

    New observations of the near infrared spectra of S stars are presented as part of a survey of the unidentified Keenan and Wing bands. Bandhead wavelengths accurate to 0.5 A are presented. A new band is found at 9014 A. The bands are not present in normal M giants and dwarfs. Laboratory spectroscopy of heavy element oxides is reported. Several new identifications are proposed. The 10 300 A Wing band is identified with the Δv = - 1 sequence of the ZrO 9300 A Δv = 0 bands. The ZrO B 1 PI-A 1 Δ (Δv = 0) system may be responsible for either the 9736 A or the 10 515 A Wing bands. Two new bands in the near infrared at 8219 and 8235 A are provided by CeO. A new band with heads at 7503 and 7509 A in a spectrum of R And is tentatively attributed to YS. A band at 8268 A in M stars is the TiO delta(2-1) head. The 8610 A Keenan band is not due to CrH. Potential carriers of the Keenan and Wing bands are reviewed. It is suggested that the heavy element sulphides and, perhaps, chlorides are leading candidates. Identification of YS in R And may provide the first evidence for these sulphides. ZrS is a leading candidate for which laboratory spectroscopy is needed. (author)

  14. Modelling the competition between photo-darkening and photo-bleaching effects in high-power ytterbium-doped fibre amplifiers

    Science.gov (United States)

    Jolly, A.; Vinçont, C.; Pierre, Ch.; Boullet, J.

    2017-08-01

    We propose an innovative, fully space-time model to take into account the seed-dependent nature of ageing penalties in high-power ytterbium-doped fibre amplifiers. Ageing is shown to be based on the on-going competition between photo-darkening and photo-bleaching phenomena. Our approach is based on the natural interplay between the excited states of co-existing ytterbium pairs and colour centres in highly doped fibres, in the presence of thermal coupling between the closely spaced excited states. As initiated from IR photons, the excitation of colour centres up to the UV band is supposed to be governed by multi-photon absorption. The interactions of interest in the kinetics of photo-bleaching then take the form of highly efficient charge transfers, which imply the reduction of some fraction of the basically trivalent ions to their divalent state. Due to the activation of ytterbium pairs by means of energy transfer up-conversion, these interactions get more and more effective at elevated operating powers. Computational results using these principles actually help to fit our experimental data regarding seeding effects, as well as fully generic trends already evidenced in the literature. This gives a fine demonstration for the need to discriminate co-active pump and signal contributions. Our self-consistent, still simplified model then consists of a valuable tool to help for a deeper understanding of the ageing issues. Furthermore, considering higher-order ytterbium aggregates, this should open new routes towards more comprehensive models.

  15. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-06-01

    In this report, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR.

  16. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-09-16

    In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR. © 2012 IEEE.

  17. The 5K70SK automatically tuned, high power, S-band klystron

    Science.gov (United States)

    Goldfinger, A.

    1977-01-01

    Primary objectives include delivery of 44 5K70SK klystron amplifier tubes and 26 remote tuner assemblies with spare parts kits. Results of a reliability demonstration on a klystron test cavity are discussed, along with reliability tests performed on a remote tuning unit. Production problems and one design modification are reported and discussed. Results of PAT and DVT are included.

  18. Performance review of an indigenously developed high power test stand built for the Indian S-band 5 MW pulsed klystron development

    International Nuclear Information System (INIS)

    Shrivastava, Purushottam; Baxy, D.; Mulchandani, J.; Hannurkar, P.R.; Joshi, L.M.

    2003-01-01

    CAT took up development of 5 MW S-Band klystrons indigenously in collaboration with CEERI Pilani. The development of klystron prototype is completed. These klystrons are very crucial devices, for energizing the 10-20 MeV electron accelerators, which are developed in the country for various industrial, medical and scientific applications. A test station has been developed indigenously at CAT for these klystrons. It consists of a 12 MW peak power 130 kV klystron pulse modulator, a 1 : 10 pulse transformer, 130 kV high voltage deck having high voltage pulse divider, pulse current transformer as well indigenously built klystron socket, filament supplies, klystron support structure and pulse transformer oil tank. After development/rigorous testing the test stand was shifted to CEERI and was installed and commissioned there by CAT. Gun collector test module and prototypes of the 5 MW klystron were tested, aged and conditioned at high power using this test stand. The details of the system / test results are discussed

  19. Influence of core NA on thermal-induced mode instabilities in high power fiber amplifiers

    International Nuclear Information System (INIS)

    Tao, Rumao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

    2015-01-01

    We report on the influence of core NA on thermal-induced mode instabilities (MI) in high power fiber amplifiers. The influence of core NA and the V-parameter on MI has been investigated numerically. It shows that core NA has a larger influence on MI for fibers with a smaller core-cladding-ratio, and the influence of core NA on the threshold is more obvious when the amplifiers are pumped at 915 nm. The dependence of the threshold on the V-parameter revealed that the threshold increases linearly as the V-parameter decreases when the V-parameter is larger than 3.5, and the threshold shows an exponential increase as the V-parameter decreases when the V-parameter is less than 3.5. We also discussed the effect of linewidth on MI, which indicates that the influence of linewidth can be neglected for a linewidth smaller than 1 nm when the fiber core NA is smaller than 0.07 and the fiber length is shorter than 20 m. Fiber amplifiers with different core NA were experimentally analyzed, which agreed with the theoretical predictions. (letter)

  20. The mercury laser system - An average power, gas-cooled, Yb:S-FAP based system with frequency conversion and wavefront correction

    Energy Technology Data Exchange (ETDEWEB)

    Bibeau, C.; Bayramian, A.; Armstrong, P.; Ault, E.; Beach, R.; Benapfl, M.; Campbell, R.; Dawson, J.; Ebbers, C.; Freitas, B.; Kent, R.; Liao, Z.; Ladran, T.; Menapace, J.; Molander, B.; Moses, E.; Oberhelman, S.; Payne, S.; Peterson, N.; Schaffers, K.; Stolz, C.; Sutton, S.; Tassano, J.; Telford, S.; Utterback, E. [Lawrence Livermore National Lab., Livermore, CA (United States); Randles, M. [Northrop Grumman Space Technologies, Charlotte, NC (United States); Chain, B.; Fei, Y. [Crystal Photonics, Sanford, Fl (United States)

    2006-06-15

    We report on the operation of the Mercury laser with fourteen 4*6 cm{sup 2} Yb:S-FAP amplifier slabs pumped by eight 100 kW peak power diode arrays. The system was continuously run at 55 J and 10 Hz for several hours, (2*10{sup 5} cumulative shots) with over 80% of the energy in a 6 times diffraction limited spot at 1.047 {mu}m. Improved optical quality was achieved in Yb:S-FAP amplifiers with magneto-rheological finishing, a deterministic polishing method. In addition, average power frequency conversion employing YCOB crystal was demonstrated at 50% conversion efficiency or 22.6 J at 10 Hz. (authors)

  1. High-gain (43 dB), high-power (40 W), highly efficient multipass amplifier at 995 nm in Yb:LiYF4

    Science.gov (United States)

    Manni, Jeffrey; Harris, Dennis; Fan, Tso Yee

    2018-06-01

    A simple implementation of a multipass amplifier along with the use of a cryogenic Yb:LiYF4 (YLF) gain medium has enabled the demonstration of a bulk amplifier with an unprecedented combination of large-signal gain (43 dB), efficiency (>50% optical), average output power (40 W) and a near-diffraction-limited output beam.

  2. SPS RF System Amplifier plant

    CERN Multimedia

    1977-01-01

    The picture shows a 2 MW, 200 MHz amplifier plant with feeder lines. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X.

  3. Computer-aided design of the RF-cavity for a high-power S-band klystron

    Science.gov (United States)

    Kant, D.; Bandyopadhyay, A. K.; Pal, D.; Meena, R.; Nangru, S. C.; Joshi, L. M.

    2012-08-01

    This article describes the computer-aided design of the RF-cavity for a S-band klystron operating at 2856 MHz. State-of-the-art electromagnetic simulation tools SUPERFISH, CST Microwave studio, HFSS and MAGIC have been used for cavity design. After finalising the geometrical details of the cavity through simulation, it has been fabricated and characterised through cold testing. Detailed results of the computer-aided simulation and cold measurements are presented in this article.

  4. A two primers random amplified polymorphic DNA procedure to obtain polymerase chain reaction fingerprints of bacterial species.

    Science.gov (United States)

    Rivas, R; Velázquez, E; Valverde, A; Mateos, P F; Martínez-Molina, E

    2001-04-01

    Polymerase chain reation (PCR) fingerprints are used to characterize and recognize bacteria and are generally obtained using universal primers that generate an array of DNA amplicons, which can be separated by electrophoresis. Universal primers 8F and 1491 R have been used to amplify specifically 16S rDNA. We have used these primers at an annealing temperature of 50 degrees C. Agarose gel electrophoresis of PCR products revealed several bands. The band pattern of each bacterial species was different and the strains belonging to the same species shared an identical pattern. The patterns obtained did not show variations with plasmid DNA content or the growth stage of the bacteria. The peculiarity of the randomly amplified polymorphic DNA (RAPD) described in this work lies in the use of two large primers (proximately 20 nt) to obtain the pattern, since normally a only smaller primer is used, and in the new application for the primers used to amplify 16S rDNA. This new procedure, called two primers (TP)-RAPD fingerprinting, is thus rapid, sensitive, reliable, highly reproducible and suitable for experiments with a large number of microorganisms, and can be applied to bacterial taxonomy, ecological studies and for the detection of new bacterial species.

  5. Derivation and Analysis of a Low-Cost, High-performance Analogue BPCM Control Scheme for Class-D Audio Power Amplifiers

    OpenAIRE

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2005-01-01

    This paper presents a low-cost analogue control scheme for class-D audio power amplifiers. The scheme is based around bandpass current-mode (BPCM) control, and provides ample stability margins and low distortion over a wide range of operating conditions. Implementation is very simple and does not require the use of operational amplifiers. Small-signal behavior of the controller is accurately predicted, and design is carried out using standard transfer function based linear control methodology...

  6. Phase noise in RF and microwave amplifiers.

    Science.gov (United States)

    Boudot, Rodolphe; Rubiola, Enrico

    2012-12-01

    Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

  7. Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  8. Performance of horn-coupled transition edge sensors for L- and S-band optical detection on the SAFARI instrument

    Science.gov (United States)

    Goldie, D. J.; Glowacka, D. M.; Withington, S.; Chen, Jiajun; Ade, P. A. R.; Morozov, D.; Sudiwala, R.; Trappe, N. A.; Quaranta, O.

    2016-07-01

    We describe the geometry, architecture, dark- and optical performance of ultra-low-noise transition edge sensors as THz detectors for the SAFARI instrument. The TESs are fabricated from superconducting Mo/Au bilayers coupled to impedance-matched superconducting β-phase Ta thin-film absorbers. The detectors have phonon-limited dark noise equivalent powers of order 0.5 - 1.0 aW/ √ Hz and saturation powers of order 20 - 40 fW. The low temperature test configuration incorporating micro-machined backshorts is also described, and construction and typical performance characteristics for the optical load are shown. We report preliminary measurements of the optical performance of these TESs for two SAFARI bands; L-band at 110 - 210 μm and S-band 34 - 60 μm .

  9. Programmable gain equalizer for multi-core fiber amplifiers

    NARCIS (Netherlands)

    Fontaine, N.K.; Guan, B.; Ryf, R.; Chen, H.; Koonen, A.M.J.; Ben Yoo, S.J.; Abedin, K.; Fini, J.; Taunay, T.F.; Neilson, D.T.

    2014-01-01

    We demonstrate a programmable gain equalizer for 7-core fiber that can independently equalize spectra or block wavelengths in each core across the C-band. It is spliced directly to a side-pumped multi-core amplifying fiber.

  10. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

    International Nuclear Information System (INIS)

    Su Shi; Liao Xiaoping

    2009-01-01

    This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

  11. Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

    Science.gov (United States)

    Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

    2015-01-01

    In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

  12. Design of resonant converter based DC power supply for RF amplifier

    International Nuclear Information System (INIS)

    Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

    2017-01-01

    ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

  13. Modeling Distortion Effects in Class-D Amplifier Filter Inductors

    DEFF Research Database (Denmark)

    Knott, Arnold; Stegenborg-Andersen, Tore; Thomsen, Ole Cornelius

    2010-01-01

    Distortion is generally accepted as a quantifier to judge the quality of audio power amplifiers. In switchmode power amplifiers various mechanisms influence this performance measure. After giving an overview of those, this paper focuses on the particular effect of the nonlinearity of the output f...

  14. M.V.A. amplifier for plasma position control by vertical magnetic field

    International Nuclear Information System (INIS)

    Schenk, G.

    1978-01-01

    The radial plasma position in the WEGA torus is controlled by a power amplifier, acting on the vertical magnetic field. Up to now the feedback loop contains, as amplifying elements, two 90 kW DC-transistor amplifiers, acting in push-pull operation. As increased plasma stability and lifetime is desirable, we have to increase the power amplifier to about 1 Megawatt. Industry offered a thyristor rectifier, operating at 50 or 300 Hz, and alternatively a thyristor chopper amplifier at a few kHz frequency response. Theses offers did not correspond to our demand, as far as response time, price and primary power requirements are concerned. We have implemented a bipolar switching-type amplifier (also called H-bridge converter) with the characteristics: time response < 0,05 ms., pulsed power = 1 MW (400 V, 2500 A), primary power = 2,5 kW. As power switch, a network of parallel high voltage transistors, driven by three transistor stages, has been chosen, to control a vertical magnetic field or +/- 180 G, with a precision of about one per cent. Precautions for transistor switches concerning mainly critical voltage, current, instantaneous power and selfoscillating behaviour have been taken. This systems corresponds to our demands

  15. Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

    Science.gov (United States)

    Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

    2016-01-01

    Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

  16. Pump Side-scattering in Ultra-powerful Backward Raman Amplifiers

    International Nuclear Information System (INIS)

    Solodov, A.A.; Malkin, V.M.; Fisch, N.J.

    2004-01-01

    Extremely large laser power might be obtained by compressing laser pulses through backward Raman amplification (BRA) in plasmas. Premature Raman backscattering of a laser pump by plasma noise might be suppressed by an appropriate detuning of the Raman resonance, even as the desired amplification of the seed persists with a high efficiency. In this paper, we analyze side-scattering of laser pumps by plasma noise in backward Raman amplifiers. Though its growth rate is smaller than that of backscattering, the side-scattering can nevertheless be dangerous, because of a longer path of side-scattered pulses in plasmas and because of an angular dependence of the Raman resonance detuning. We show that side-scattering of laser pumps by plasma noise in BRA might be suppressed to a tolerable level at all angles by an appropriate combination of two detuning mechanisms associated with plasma density gradient and pump chirp

  17. A look-up-table digital predistortion technique for high-voltage power amplifiers in ultrasonic applications.

    Science.gov (United States)

    Gao, Zheng; Gui, Ping

    2012-07-01

    In this paper, we present a digital predistortion technique to improve the linearity and power efficiency of a high-voltage class-AB power amplifier (PA) for ultrasound transmitters. The system is composed of a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a field-programmable gate array (FPGA) in which the digital predistortion (DPD) algorithm is implemented. The DPD algorithm updates the error, which is the difference between the ideal signal and the attenuated distorted output signal, in the look-up table (LUT) memory during each cycle of a sinusoidal signal using the least-mean-square (LMS) algorithm. On the next signal cycle, the error data are used to equalize the signal with negative harmonic components to cancel the amplifier's nonlinear response. The algorithm also includes a linear interpolation method applied to the windowed sinusoidal signals for the B-mode and Doppler modes. The measurement test bench uses an arbitrary function generator as the DAC to generate the input signal, an oscilloscope as the ADC to capture the output waveform, and software to implement the DPD algorithm. The measurement results show that the proposed system is able to reduce the second-order harmonic distortion (HD2) by 20 dB and the third-order harmonic distortion (HD3) by 14.5 dB, while at the same time improving the power efficiency by 18%.

  18. Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

    Science.gov (United States)

    Kuroda, Tatsuya; Mori, Nobuya

    2018-04-01

    The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.

  19. Audio power amplifier techniques with energy efficient power conversion. Vol. 1

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, Karsten

    1998-04-01

    A fundamental study of both analog and digital pulse modulation methods is carried out. A novel class of multi-level pulse modulation methods - Phase Shifted Carrier Pulse Width Modulation (PSCPWM) - is introduced and show to have several advantageous features, primarily caused by the much improved synthesis of the modulating signal. Enhanced digital pulse modulation methods for digital Pulse Modulation Amplifier (PMA) systems are investigated, and a simple methodology for digital PWM modulator synthesis is devised. It is concluded, that the modulator performance is not a limitation in the system, regardless of the domain of modulator implementation. Power conversion in PMA systems is adressed from the perspective of both linearity and efficienty optimization. Based on detailed studies of the distortion mechanisms in the power conversion stage it is concluded, that this is the fundamental limitation on system performance due to several physical limitations. The analysis of general power stage efficiency concludes that dramatic improvements in energy efficiency are possible with PMA systems that are optimized for efficiency. A control system design methodology is devised as a platform for synthesis of robust control systems. Investigations of three fundamental control structures show that even simple control systems offer a remarkable value, although the considered topologies also have their limitations which is verified by practical evaluation in hardware. A novel control method is introduced - Multivariable Enhanced Cascade Control (MECC). MECC provides flexible control over all essential system parameters and is furthermore simple in realization. Practical evaluation of a MECC based PMA shows state-of-the-art performance. The application of non-linear control methods is investigated with the introduction of an enhanced non-linear control/modulator topology. Although the non-linear controller is theoretically interesting, the method proves to suffer from various

  20. Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots.

    Science.gov (United States)

    Geiregat, Pieter; Houtepen, Arjan J; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

    2018-01-01

    Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.