Neutron radiation damage studies on silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Chen, W.; Kraner, H.W.

1990-10-01

Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (Φ n ≥ 10 12 n/cm 2 ), C-V characteristics of detectors with high resistivities (ρ ≥ 1 kΩ-cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN 2 temperature) detectors shows three anneal stages, while only two anneal stages were observed in elevated temperature anneal. 19 refs., 14 figs

Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

2010-07-11

Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

Gamma radiation detectors for safeguards applications

International Nuclear Information System (INIS)

Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

2007-01-01

The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

CeBr3 as a room-temperature, high-resolution gamma-ray detector

International Nuclear Information System (INIS)

Guss, Paul; Reed, Michael; Yuan Ding; Reed, Alexis; Mukhopadhyay, Sanjoy

2009-01-01

Cerium bromide (CeBr 3 ) has become a material of interest in the race for high-resolution gamma-ray spectroscopy at room temperature. This investigation quantified the potential of CeBr 3 as a room-temperature, high-resolution gamma-ray detector. The performance of CeBr 3 crystals was compared to other scintillation crystals of similar dimensions and detection environments. Comparison of self-activity of CeBr 3 to cerium-doped lanthanum tribromide (LaBr 3 :Ce) was performed. Energy resolution and relative intrinsic efficiency were measured and are presented.

Specification and qualification of fire detectors used in very high radiation rooms at the Angra-2 nuclear power plant

Energy Technology Data Exchange (ETDEWEB)

Sá, Luís Gustavo S.; Oliveira, Alisson S. de; Donorato, Fernando da S.; Oliveira, Marcos Vinicius M. de, E-mail: luisg@eletronuclear.gov.br, E-mail: alison@eletronuclear.gov.br, E-mail: donora@eletronuclear.gov.br, E-mail: marcoso@eletronuclear.gov.br [Eletrobrás Termonuclear S.A. (ELETRONUCLEAR), Angra dos Reis, RJ (Brazil). Departamento GDD.O

2017-07-01

During the Operation cycle 11 of the Angra-2 Nuclear Power Plant, faults were observed in the optical and ionic fire detectors models installed in very high radiation rooms (pump reactor rooms and sump containment). It was observed that these models were already obsolete and no available for purchase. In addition, as during the operation cycle these rooms are not accessible for maintenance because of the high dose rates, corrective measures only were taken at Outage 2P11 where all detectors were replaced by the new neural fire detector model. This high-tech model was not sufficiently resistant to the high dose rates of the environment rooms and starts to fail in the beginning of the cycle 11. Thereafter, a specific engineering work was developed in partnership with IPEN - Institute of Energy and Nuclear Research to specify and qualify a new model compatible with the electronic Central of the Fire Detection System and Alarm and at the same time resistant to radiation. The fire detectors were subjected to a known gamma radiation rate at the laboratory facilities of IPEN through the gamma irradiation equipment with cobalt radiation source. In this way, it was possible to determine its useful life comparing the total dose absorbed for detector failure and the environmental dose where it was installed in Angra-2. The current approved model was installed during Outage 2P13, and until now, no spurious alarms or failure were observed during the current cycle. (author)

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Science.gov (United States)

Bacchetta, N.; Bisello, D.; Canali, C.; Fuochi, P. G.; Gotra, Y.; Paccagnella, A.; Verzellesi, G.

1993-12-01

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease.

Heavy metal ternary halides for room-temperature x-ray and gamma-ray detection

Science.gov (United States)

Liu, Zhifu; Peters, John A.; Stoumpos, Constantinos C.; Sebastian, Maria; Wessels, Bruce W.; Im, Jino; Freeman, Arthur J.; Kanatzidis, Mercouri G.

2013-09-01

We report our recent progress on wide bandgap ternary halide compounds CsPbBr3 and CsPbCl3 for room temperature x-ray and gamma-ray detectors. Their bandgaps are measured to be 2.24 eV and 2.86 eV, respectively. The measured mobility-lifetime products of CsPbBr3 are 1.7×10-3, 1.3×10-3 cm2/V, for electron and hole carriers, respectively, comparable to those of CdTe. We measured the room temperature spectral response of CsPbBr3 sample to Ag x-ray radiation. It has a well-resolved spectral response to the 22.4 keV Kα radiation peak and detector efficiency comparable to that of CdZnTe detector at 295 K.

Conformational variation of proteins at room temperature is not dominated by radiation damage

International Nuclear Information System (INIS)

Russi, Silvia; González, Ana; Kenner, Lillian R.; Keedy, Daniel A.; Fraser, James S.; Bedem, Henry van den

2017-01-01

Protein crystallography data collection at synchrotrons is routinely carried out at cryogenic temperatures to mitigate radiation damage. Although damage still takes place at 100 K and below, the immobilization of free radicals increases the lifetime of the crystals by approximately 100-fold. Recent studies have shown that flash-cooling decreases the heterogeneity of the conformational ensemble and can hide important functional mechanisms from observation. These discoveries have motivated increasing numbers of experiments to be carried out at room temperature. However, the trade-offs between increased risk of radiation damage and increased observation of alternative conformations at room temperature relative to cryogenic temperature have not been examined. A considerable amount of effort has previously been spent studying radiation damage at cryo-temperatures, but the relevance of these studies to room temperature diffraction is not well understood. Here, the effects of radiation damage on the conformational landscapes of three different proteins (T. danielli thaumatin, hen egg-white lysozyme and human cyclophilin A) at room (278 K) and cryogenic (100 K) temperatures are investigated. Increasingly damaged datasets were collected at each temperature, up to a maximum dose of the order of 10 7 Gy at 100 K and 10 5 Gy at 278 K. Although it was not possible to discern a clear trend between damage and multiple conformations at either temperature, it was observed that disorder, monitored by B-factor-dependent crystallographic order parameters, increased with higher absorbed dose for the three proteins at 100 K. At 278 K, however, the total increase in this disorder was only statistically significant for thaumatin. A correlation between specific radiation damage affecting side chains and the amount of disorder was not observed. Lastly, this analysis suggests that elevated conformational heterogeneity in crystal structures at room temperature is observed despite radiation

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Energy Technology Data Exchange (ETDEWEB)

Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

2014-07-14

In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

Room temperature X- and gamma-ray detectors using thallium bromide crystals

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with wide band gap (2.68 eV) and high X- and gamma-ray stopping power. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using purified material. Two types of room temperature X- and gamma-ray detectors were fabricated from the TlBr crystals: TlBr detectors with high detection efficiency for positron annihilation gamma-ray (511 keV) detection and TlBr detectors with high-energy resolution for low-energy X-ray detection. The detector of the former type demonstrated energy resolution of 56 keV FWHM (11%) for 511 keV gamma-rays. Energy resolution of 1.81 keV FWHM for 5.9 keV was obtained from the detector of the latter type. In order to analyze noise characteristics of the detector-preamplifier assembly, the equivalent noise charge (ENC) was measured as a function of the amplifier shaping time for the high-resolution detector. This analysis shows that parallel white noise and 1/f noise were dominant noise sources in the detector...

Solid-state radiation detectors for active personal dosimetry and radiations source tracking

International Nuclear Information System (INIS)

Talpalariu, Corneliu; Talpalariu, Jeni; Matei, Corina; Lita, Ioan; Popescu, Oana

2010-01-01

We report on the design of the readout electronics using PIN diode radiation detector of 5 mm thickness for nuclear safety and active personal dosimetry. Our effort consisted in designing and fabricating the electronics to reflect the needs of gamma radiations dosimetry and hybrids PIN diode arrays for charged particle detectors. We report results obtained during testing and characterizing the new devices in gamma fields, operating at room temperature. There were determined the energy spectrum resolution, radiation hardness and readout rate. Also, data recording methods and parallel acquisition problems from a transducer matrix are presented. (authors)

CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

Energy Technology Data Exchange (ETDEWEB)

CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

2007-05-04

One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

International Nuclear Information System (INIS)

Casagrande, L.; Barnett, B.M.; Bartalina, P.

1999-01-01

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Room-temperature macromolecular serial crystallography using synchrotron radiation

Directory of Open Access Journals (Sweden)

Francesco Stellato

2014-07-01

Full Text Available A new approach for collecting data from many hundreds of thousands of microcrystals using X-ray pulses from a free-electron laser has recently been developed. Referred to as serial crystallography, diffraction patterns are recorded at a constant rate as a suspension of protein crystals flows across the path of an X-ray beam. Events that by chance contain single-crystal diffraction patterns are retained, then indexed and merged to form a three-dimensional set of reflection intensities for structure determination. This approach relies upon several innovations: an intense X-ray beam; a fast detector system; a means to rapidly flow a suspension of crystals across the X-ray beam; and the computational infrastructure to process the large volume of data. Originally conceived for radiation-damage-free measurements with ultrafast X-ray pulses, the same methods can be employed with synchrotron radiation. As in powder diffraction, the averaging of thousands of observations per Bragg peak may improve the ratio of signal to noise of low-dose exposures. Here, it is shown that this paradigm can be implemented for room-temperature data collection using synchrotron radiation and exposure times of less than 3 ms. Using lysozyme microcrystals as a model system, over 40 000 single-crystal diffraction patterns were obtained and merged to produce a structural model that could be refined to 2.1 Å resolution. The resulting electron density is in excellent agreement with that obtained using standard X-ray data collection techniques. With further improvements the method is well suited for even shorter exposures at future and upgraded synchrotron radiation facilities that may deliver beams with 1000 times higher brightness than they currently produce.

Study of low noise preamplifier systems for use with room temperature mercuric iodide (HgI2) x-ray detectors

International Nuclear Information System (INIS)

Iwanczyk, J.S.; Dabrowski, A.J.; Huth, G.C.; Del Duca, A.; Schenpple, W.

1980-01-01

An analysis of different preamplification systems for use with room temperature mercuric iodide x-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution of 295 eV (FWHM) for Fe-55 source (5.9 keV) and 225 eV (FWHM) for the pulser have been obtained with both the detector and the input FET at room temperature using the pulsed-light feedback preamplifier. It has been shown that cooling the input FET using a small Peltier element allows the energy resolution to be improved up to 25%

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

Energy Technology Data Exchange (ETDEWEB)

Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

2009-09-07

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

International Nuclear Information System (INIS)

Guerra, P; Santos, A; Darambara, D G

2009-01-01

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

Gaschromatographic proof of nitrous oxide concentrations in air by means of radiation ionization detectors

International Nuclear Information System (INIS)

Popp, P.; Schoentube, E.; Oppermann, G.

1985-01-01

For the analysis of nitrous oxide concentrations at workplaces in operating theatres, gaschromatography is a particularly suitable method if it is possible to measure nitrous oxide concentrations in the ppm to ppb region. For this, most frequently used gaschromatographic detectors (flame ionization detector, thermal conductivity detector) are unsuitable, whereas radiation ionization detectors can be used successfully. The investigations using detectors designed at the Central Institute for Isotopes and Radiation Research of the GDR Academy of Sciences showed that a high-temperature electron-capture detector (ECD), working at a temperatur of 250 0 C, enables the determination of traces of nitrous oxide with a detection limit of about 200 ppb, while the helium detector has a limit of 50 ppb of nitrous oxide in room air. Since the helium detector requires extremely pure carrier gas, the high-temperature ECD appears more suitable for analyzing nitrous oxide. (author)

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

International Nuclear Information System (INIS)

Yatskiv, R.; Zdansky, K.; Pekarek, L.

2009-01-01

Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241 Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

Performance of room temperature mercuric iodide (HgI2) detectors in the ultra low energy x-ray region

International Nuclear Information System (INIS)

Dabrowski, A.J.; Iwanczyk, J.S.; Barton, J.B.; Huth, G.C.; Whited, R.; Ortale, C.; Economou, T.E.; Turkevich, A.L.

1980-01-01

Performance of room temperature mercuric iodide x-ray spectrometers has been recently improved through new fabrication techniques and further development of low noise associated electronic systems. This progress has extended the range of measurements to the ultra low energy x-ray region at room temperature. This paper reports the study of the effect of contact material on the performance of HgI 2 detectors in the low energy x-ray region

Fabrication of radiation detector using PbI2 crystals

International Nuclear Information System (INIS)

Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

1995-01-01

Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

New Radiation Protection training room

CERN Multimedia

HSE Unit

2013-01-01

From now on, the theory and practical components of the Radiation Protection training, developed by the RP Group and offered by the HSE Unit’s Safety Training team to people working in a Controlled Radiation Area, will take place in a dedicated teaching room, designed specifically for this kind of training.   The new room is in the Safety Training Centre on the Prévessin site and has been open since 16 October. It has an adjoining workshop that, like the room itself, can accommodate up to 12 people. It is also equipped with an interactive board as well as instruments and detectors to test for ionising radiation. This room is located near the recently inaugurated LHC tunnel mock-up where practical training exercises can be carried out in conditions almost identical to those in the real tunnel. To consult the safety training catalogue and/or sign up for Radiation Protection training, please go to: https://cta.cern.ch For further information, please contact the Safety Trainin...

Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2013-12-01

Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

Radiation effects on II-VI compound-based detectors

CERN Document Server

Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

2002-01-01

The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

Development of a Compact Gamma-ray Detector for a Neural-Network Radiation Monitoring

Energy Technology Data Exchange (ETDEWEB)

Kim, H. S.; Ha, J. H.; Lee, K. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, C. H. [Hanyang Univ., Seoul (Korea, Republic of)

2012-03-15

Radiation monitoring is very important to secure safety in nuclear-related facilities and against nuclear terrorism. For wide range of radiation monitoring, neutral network system of radiation detection is most efficient way. Thus, a compact radiation detector is useful to install in wide range to be concerned. A compact gamma-ray detector was fabricated by using a CsI(Tl) scintillator, which was matched with the formerly developed PIN photodiode, for a neural network radiation monitoring. At room temperature, the fabricated compact gamma-ray detector demonstrates an energy resolution of 13.3 % for 662 keV 6.9% for 1330 keV. The compactness, the low-voltage power consumption and the physical hardness are very useful features for a neural network radiation monitoring. In this study, characteristics of a fabricated compact gamma-ray detector were presented. An important aspect to consider in a neural-network radiation monitoring such as reaction probability of the fabricated compact detector for angle of incident gamma-ray was also addressed.

Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

International Nuclear Information System (INIS)

Dajko, G.

1991-01-01

Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Outrunning free radicals in room-temperature macromolecular crystallography

International Nuclear Information System (INIS)

Owen, Robin L.; Axford, Danny; Nettleship, Joanne E.; Owens, Raymond J.; Robinson, James I.; Morgan, Ann W.; Doré, Andrew S.; Lebon, Guillaume; Tate, Christopher G.; Fry, Elizabeth E.; Ren, Jingshan; Stuart, David I.; Evans, Gwyndaf

2012-01-01

A systematic increase in lifetime is observed in room-temperature protein and virus crystals through the use of reduced exposure times and a fast detector. A significant increase in the lifetime of room-temperature macromolecular crystals is reported through the use of a high-brilliance X-ray beam, reduced exposure times and a fast-readout detector. This is attributed to the ability to collect diffraction data before hydroxyl radicals can propagate through the crystal, fatally disrupting the lattice. Hydroxyl radicals are shown to be trapped in amorphous solutions at 100 K. The trend in crystal lifetime was observed in crystals of a soluble protein (immunoglobulin γ Fc receptor IIIa), a virus (bovine enterovirus serotype 2) and a membrane protein (human A 2A adenosine G-protein coupled receptor). The observation of a similar effect in all three systems provides clear evidence for a common optimal strategy for room-temperature data collection and will inform the design of future synchrotron beamlines and detectors for macromolecular crystallography

Outrunning free radicals in room-temperature macromolecular crystallography

Energy Technology Data Exchange (ETDEWEB)

Owen, Robin L., E-mail: robin.owen@diamond.ac.uk; Axford, Danny [Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Nettleship, Joanne E.; Owens, Raymond J. [Rutherford Appleton Laboratory, Didcot OX11 0FA (United Kingdom); The Henry Wellcome Building for Genomic Medicine, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Robinson, James I.; Morgan, Ann W. [University of Leeds, Leeds LS9 7FT (United Kingdom); Doré, Andrew S. [Heptares Therapeutics Ltd, BioPark, Welwyn Garden City AL7 3AX (United Kingdom); Lebon, Guillaume; Tate, Christopher G. [MRC Laboratory of Molecular Biology, Hills Road, Cambridge CB2 0QH (United Kingdom); Fry, Elizabeth E.; Ren, Jingshan [The Henry Wellcome Building for Genomic Medicine, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Stuart, David I. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); The Henry Wellcome Building for Genomic Medicine, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Evans, Gwyndaf [Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom)

2012-06-15

A systematic increase in lifetime is observed in room-temperature protein and virus crystals through the use of reduced exposure times and a fast detector. A significant increase in the lifetime of room-temperature macromolecular crystals is reported through the use of a high-brilliance X-ray beam, reduced exposure times and a fast-readout detector. This is attributed to the ability to collect diffraction data before hydroxyl radicals can propagate through the crystal, fatally disrupting the lattice. Hydroxyl radicals are shown to be trapped in amorphous solutions at 100 K. The trend in crystal lifetime was observed in crystals of a soluble protein (immunoglobulin γ Fc receptor IIIa), a virus (bovine enterovirus serotype 2) and a membrane protein (human A{sub 2A} adenosine G-protein coupled receptor). The observation of a similar effect in all three systems provides clear evidence for a common optimal strategy for room-temperature data collection and will inform the design of future synchrotron beamlines and detectors for macromolecular crystallography.

Radiation detector arrangements and methods

International Nuclear Information System (INIS)

Jackson, J.

1989-01-01

The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

Trends in the design of front-end systems for room temperature solid state detectors

International Nuclear Information System (INIS)

Manfredi, Pier F.; Re, Valerio

2003-01-01

The paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors

Use of HgI2 as gamma radiation detector

International Nuclear Information System (INIS)

Perez Morales, J.M.

1993-01-01

The Mercuric Iodide (HgI 2 ) has become one of the most promising room temperature semiconductors for the construction of X and gamma radiation detectors. The classical methods of spectroscopy have not demonstrated to achieve optimum results with HgI 2 detectors, mainly due to its particular carrier transport properties. Several alternative spectroscopic methods developed in the last ten years are presented and commented, selecting for a complete study one of them: 'The Partial Charge Collection Method'. The transport properties of the carriers generated by the radiation in the detector is specially important for understanding the spectroscopic behaviour of the HgI 2 detectors. For a rigorous characterization of this transport, it has been studied a digital technique for the analysis of the electric pulses produced by the radiation. Theoretically, it has been developed a Monte Carlo simulation of the radiation detection and the electronic signal treatment processes with these detectors in the energy range of 60-1300 KeV. These codes are applied to the study of the The Partial Charge Collection Method and its comparison with gaussian methods. Experimentally, this digital techniques is used for the study of the transport properties of thin HgI 2 detectors. Special interest is given to the contribution of the slower carriers, the holes, obtaining some consequent of spectroscopic interest. Finally, it is presented the results obtained with the first detectors grown and mounted in CIEMAT with own technology. (author). 129 ref

Advanced processing of CdTe pixel radiation detectors

Science.gov (United States)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

Directory of Open Access Journals (Sweden)

Obraztsova O.

2018-01-01

Full Text Available Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV, wide band gap energy (3.27 eV and high thermal conductivity (4.9 W/cm·K, SiC can operate in harsh environment (high temperature, high pressure and high radiation level without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV, higher threshold displacement energy (40-50 eV and thermal conductivity (22 W/cm·K, which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

Science.gov (United States)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond

Cellulose gels produced in room temperature ionic liquids by ionizing radiation

International Nuclear Information System (INIS)

Kimura, Atsushi; Nagasawa, Naotsugu; Taguchi, Mitsumasa

2014-01-01

Cellulose-based gels were produced in room temperature ionic liquids (RTILs) by ionizing radiation. Cellulose was dissolved at the initial concentration of 20 wt% in 1-ethyl-3-methylimidazolium (EMI)-acetate or N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium (DEMA)-formate with a water content of 18 wt%, and irradiated with γ-rays under aerated condition to produce new cellulose gels. The gel fractions of the cellulose gels obtained in EMI-acetate and DEMA-formate at a dose of 10 kGy were 13% and 19%, respectively. The formation of gel fractions was found to depend on the initial concentration of cellulose, water content, and irradiation temperature. The obtained gel readily absorbed water, methanol, ethanol, dichloromethane, N,N-dimethylacetamide, and RTILs. - Highlights: • Cellulose gels were produced in room temperature ionic liquids (RTILs). • Water plays a crucial role in the cross-linking reaction. • Cellulose gels swollen with RTILs show good electronic conductivity (3.0 mS cm −1 )

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

Energy Technology Data Exchange (ETDEWEB)

Genderen, E. van; Clabbers, M. T. B. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Das, P. P. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Stewart, A. [Department of Physics and Energy, Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland); Nederlof, I. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Amsterdam Scientific Instruments, Postbus 41882, 1009 DB Amsterdam (Netherlands); Barentsen, K. C. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Portillo, Q. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Centres Científics i Tecnològics de la Universitat de Barcelona, University of Barcelona, Carrer de Lluís Solé i Sabaris, 1-3, Barcelona (Spain); Pannu, N. S. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Nicolopoulos, S. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Gruene, T., E-mail: tim.gruene@psi.ch [Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland); Abrahams, J. P., E-mail: tim.gruene@psi.ch [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland)

2016-02-05

A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)

Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

International Nuclear Information System (INIS)

Oliveira, Icimone Braga de

2006-01-01

In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

International Nuclear Information System (INIS)

Ziock, H.J.; Holzscheiter, K.; Morgan, A.; Palounek, A.P.T.; Ellison, J.; Heinson, A.P.; Mason, M.; Wimpenny, S.J.; Barberis, E.; Cartiglia, N.; Grillo, A.; O'Shaughnessy, K.; Rahn, J.; Rinaldi, P.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Webster, A.; Wichmann, R.; Wilder, M.; Coupal, D.; Pal, T.

1993-01-01

The silicon microstrip detectors that will be used in the SDC experiment at the Superconducting Super Collider (SSC) will be exposed to very large fluences of charged particles, neutrons, and gammas. The authors present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. They study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from -10 degrees C to +50 degrees C, and as a function of 800 MeV proton fluence up to 1.5 x 10 14 p/cm 2 . They express the pronounced temperature dependencies in a simple model in terms of two annealing time constants which depend exponentially on the temperature

Mid-infrared coincidence measurements on twin photons at room temperature

DEFF Research Database (Denmark)

Mancinelli, M.; Trenti, A.; Piccione, S.

2017-01-01

Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons...... pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 mu m. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules...

Room temperature solution processed low dimensional CH3NH3PbI3 NIR detector

Science.gov (United States)

Besra, N.; Paul, T.; Sarkar, P. K.; Thakur, S.; Sarkar, S.; Das, A.; Chanda, K.; Sardar, K.; Chattopadhyay, K. K.

2018-05-01

Metal halide perovskites have recently drawn immense research interests among the worldwide scientific community due to their excellent light harvesting capabilities and above all, cost effectiveness. These new class of materials have already been used as efficient optoelectronic devices e.g. solar cells, photo detectors, etc. Here in this work, room temperature NIR (near infra red) response of organic-inorganic lead halide perovskite CH3NH3PbI3 (Methylammonium lead tri iodide) nanorods has been studied. A very simple solution process technique has been adopted to synthesize CH3NH3PbI3 nanostructures at room temperature. The NIR exposure upon the sample resulted in a considerable hike in its dark current with very good responsivity (0.37 mA/W). Along with that, a good on-off ratio (41.8) was also obtained when the sample was treated under a pulsed NIR exposure with operating voltage of 2 V. The specific detectivity of the device came in the order of 1010 Jone.

A room-temperature liquid calorimeter prototype for the SSC

International Nuclear Information System (INIS)

Brandenburg, G.W.; Geer, S.H.; Oliver, J.; Sadowski, E.; Theriot, D.

1990-01-01

Calorimeters will be an extremely important part of SSC detectors as they have been in existing collider detectors. The main issues that need to be addressed are: (1) energy resolution of jets and electrons, (2) segmentation, (3) hermiticity, (4) response time, and (5) radiation resistance. An attractive possibility on all these counts is the use of room-temperature liquids together with uranium, as pioneered by UA1. The authors are planning a prototype calorimeter which consists of a sealed vessel containing both the radiator plates and the readout pads. This geometry has been appropriately named the swimming pool design. The general mechanical starting point is similar to the SLD liquid argon calorimeters. The points they wish to address are the following: (1) Simple and reliable modular construction techniques, (2) Satisfactory electrical connections with minimal geometric impact, (3) The necessity of isolating radiator plates and liquid to maintain purity, (4) What materials can be immersed without compromising the liquid purity. The design and construction of the swimming pool electromagnetic calorimeter prototype is being carried out at the Harvard High Energy Physics Laboratory. This is one of the first attempts to build a full-scale prototype of such a design

Development of innovative silicon radiation detectors

CERN Document Server

Balbuena, JuanPablo

Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

Temperature differences within the detector of the Robertson-Berger sunburn meter, model 500, compared to global radiation

Science.gov (United States)

Kjeldstad, Berit; Grandum, Oddbjorn

1993-11-01

The Robertson-Berger sunburn meter, model 500, has no temperature compensation, and the effect of temperature on the instrument response has been investigated and discussed in several reports. It is recommended to control the temperature of the detector or at least measure it. The temperature sensor is recommended to be positioned within the detector unit. We have measured the temperature at three different positions in the detector: At the edge of the green filter where the phosphor layer is placed; at the glass tube covering the cathode; and, finally, the air temperature inside the instrument. These measurements have been performed outdoors since July 1991, with corresponding measurements of the global and direct solar radiation. There was no difference between the temperature of the glasstube covering the cathode and the air inside the instrument, at any radiation level. However, there was a difference between the green filter and the two others. The difference is linearly dependent on the amount of global radiation. The temperature difference, (Delta) T (temperature between the green filter and the air inside the sensor), increased 0.8 degree(s)C when the global irradiation increased by 100 W/m2. At maximum global radiation in Trondheim (latitude 63.4 degree(s)N) (Delta) T was approximately 5 - 6 K when the global radiation was about 700 W/m2. This was valid for temperatures between 7 degree(s)C and 30 degree(s)C. Only clear days were evaluated.

Charge transport properties of CdMnTe radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

Science.gov (United States)

Kudrin, A. V.; Dorokhin, M. V.; Zdoroveishchev, A. V.; Demina, P. B.; Vikhrova, O. V.; Kalent'eva, I. L.; Ved', M. V.

2017-11-01

A photoconductive detector of circularly polarized radiation based on the metal-insulator-semiconductor structure of CoPt/(Al2O3/SiO2/Al2O3)/InGaAs/GaAs is created. The efficiency of detection of circularly polarized radiation is 0.75% at room temperature. The operation of the detector is based on the manifestation of the effect of magnetic circular dichroism in the CoPt layer, that is, the dependence of the CoPt transmission coefficient on the sign of the circular polarization of light and magnetization.

Development of high temperature, radiation hard detectors based on diamond

Energy Technology Data Exchange (ETDEWEB)

Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

2017-02-11

Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Science.gov (United States)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

Silicon carbide and its use as a radiation detector material

International Nuclear Information System (INIS)

Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

2008-01-01

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Science.gov (United States)

Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

2017-04-01

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Charge transport properties of CdMnTe radiation detectors

Directory of Open Access Journals (Sweden)

Prokopovich D. A.

2012-10-01

Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

Property of the diamond radiation detector

International Nuclear Information System (INIS)

Sochor, V.; Cechak, T.; Sopko, B.

2008-01-01

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. In the dosimetry for radiotherapy is permanently searched the detector with high sensitivity, high stability, linear dependence of the response, small size, tissue equivalent material and fast response, for the measuring of the temporal and space variations of the dose. The diamond detector properties as high sensitivity, good spatial and temporal resolution, low Leakage currents, low capacitance, possibility to fabricate robust and compact device and high temperature operation make it possible to use these detectors in many fields from high energy physics till radiation monitoring, from Medical therapy dosimetry till synchrotron radiation measurement. (authors)

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

Science.gov (United States)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data

The radiation protection environmental assesment for 60Co irradiation room

International Nuclear Information System (INIS)

Zheng Meiyang; Jin Guohua; Shen Genfang

2010-01-01

60 Co source is applied in the process such as sterilizing agricultural products in irradiation room of some Academy of Agricultural Sciences, which is very effective in agricultural applications. However, 60 Co is highly toxic, once the leak, the consequences would be disastrous. So it is necessary to summarize the radiation protection and safety evaluation of the irradiation room indoor and outdoor, to ensure the health and lives of the staff and the surrounding population. The radiation detectors monitor six points around the irradiation room. Results show that design of irradiation room of Academy of Agricultural Sciences are mostly safe and reliable, regardless of the source in working condition. And consequences also show 60 Co source in the normal operating will not put adverse effects on the surrounding environment. In addition, the outer radiation protective measures are also outlined, in view of 60 Co own identity. (authors)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Recent progress in low-temperature silicon detectors

International Nuclear Information System (INIS)

Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

2003-01-01

The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

International Nuclear Information System (INIS)

Brunett, B.A.; Lund, J.C.; Van Scyoc, J.M.; Hilton, N.R.; Lee, E.Y.; James, R.B.

1999-01-01

The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors

Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

Energy Technology Data Exchange (ETDEWEB)

Lu, P.H., E-mail: pinghe.lu@redlen.com; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A.W.

2015-06-01

This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

Development of TiBr semiconductor crystal for applications as radiation detector and photodetector; Desenvolvimento do cristal semicondutor de brometo de talio para aplicacoes como detector de radiacao e fotodetector

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone Braga de

2006-07-01

In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by {sup 241}Am (59 keV), {sup 133}Ba (80 e 355 keV), {sup 57}Co (122 keV), {sup 22}Na (511 keV) and {sup 137} Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects

Energy Technology Data Exchange (ETDEWEB)

Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G.; Turturici, A.A.; Raso, G. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Bettelli, M. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

2016-11-01

Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm{sup 2}), while the anode is a central electrode (2×2 mm{sup 2}) surrounded by a guard-ring electrode. The detectors are characterized by electron mobility-lifetime product (µ{sub e}τ{sub e}) values ranging between 0.6 and 1·10{sup −3} cm{sup 2}/V and by low leakage currents at room temperature and at high bias voltages (38 nA/cm{sup 2} at 10000 V/cm). The spectroscopic response of the detectors to monochromatic X-ray and gamma ray sources ({sup 109}Cd, {sup 241}Am and {sup 57}Co), at different temperatures and fluxes (up to 1 Mcps), was measured taking into account the mitigation of the effects of incomplete charge collection, pile-up and high flux radiation induced polarization phenomena. A custom-designed digital readout electronics, developed at DiFC of University of Palermo (Italy), able to perform a fine pulse shape and height analysis even at high fluxes, was used. At low rates (200 cps) and at room temperature (T=25 °C), the detectors exhibit an energy resolution FWHM around 4% at 59.5 keV, for comparison an energy resolution of 3% was measured with Al/CdTe/Pt detectors by using the same electronics (A250F/NF charge sensitive preamplifier, Amptek, USA; nominal ENC of 100 electrons RMS). At high rates (750 kcps), energy resolution values of 7% and 9% were measured, with throughputs of 2% and 60% respectively. No radiation polarization phenomena were

CMS inner detector assembled in a clean room

CERN Multimedia

Serge Bellegarde

2006-01-01

The inner detector for the CMS experiment is assembled in a specially designed clean room. These rooms are sealed so that impurities in the air do not get trapped in the detector while it is being assembled. This inner detector will eventually be installed at the heart of the CMS experiment, taking measurements of particles produced in the collision of either proton or lead beams.

SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

Science.gov (United States)

Torrisi, L.; Cannavò, A.

2016-09-01

Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

Reliability studies of high operating temperature MCT photoconductor detectors

Science.gov (United States)

Wang, Wei; Xu, Jintong; Zhang, Yan; Li, Xiangyang

2010-10-01

This paper concerns HgCdTe (MCT) infrared photoconductor detectors with high operating temperature. The near room temperature operation of detectors have advantages of light weight, less cost and convenient usage. Their performances are modest and they suffer from reliable problems. These detectors face with stability of the package, chip bonding area and passivation layers. It's important to evaluate and improve the reliability of such detectors. Defective detectors were studied with SEM(Scanning electron microscope) and microscopy. Statistically significant differences were observed between the influence of operating temperature and the influence of humidity. It was also found that humility has statistically significant influence upon the stability of the chip bonding and passivation layers, and the amount of humility isn't strongly correlated to the damage on the surface. Considering about the commonly found failures modes in detectors, special test structures were designed to improve the reliability of detectors. An accelerated life test was also implemented to estimate the lifetime of the high operating temperature MCT photoconductor detectors.

Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

Science.gov (United States)

Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

1994-08-01

High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

CERN Document Server

Santocchia, A; Hall, G; MacEvoy, B; Moscatelli, F; Passeri, D; Pignatel, Giogrio Umberto

2003-01-01

The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10 degrees C). This, and more general current interest in the field of cryogenic operation, has led us to inve...

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1996-01-01

The National Institute for Nuclear Research has established a Radiation detector laboratory that has the possibility of providing to the consultants on the handling and applications of the nuclear radiation detectors. It has special equipment to repair the radiation detectors used in spectroscopy as the hyper pure Germanium for gamma radiation and the Lithium-silica for X-rays. There are different facilities in the laboratory that can become useful for other institutions that use radiation detectors. This laboratory was created to satisfy consultant services, training and repairing of the radiation detectors both in national and regional levels for Latin America. The laboratory has the following sections: Nuclear Electronic Instrumentation; where there are all kind of instruments for the measurement and characterization of detectors like multichannel analyzers of pulse height, personal computers, amplifiers and nuclear pulse preamplifiers, nuclear pulses generator, aleatories, computer programs for radiation spectra analysis, etc. High vacuum; there is a vacuum escape measurer, two high vacuum pumps to restore the vacuum of detectors, so the corresponding measurers and the necessary tools. Detectors cleaning; there is an anaerobic chamber for the detectors handling at inert atmosphere, a smoke extraction bell for cleaning with the detector solvents. Cryogenic; there are vessels and tools for handling liquid nitrogen which is used for cooling the detectors when they required it. (Author)

Room-temperature effects of UV radiation in KBr:Eu{sup 2+} crystals

Energy Technology Data Exchange (ETDEWEB)

Perez-Salas, R; Melendrez, R [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada - IFUNAM, Ensenada, Apartado Postal 2732 Ensenada, BC, 22800 (Mexico); Aceves, R; Rodriguez, R; Barboza-Flores, M [Centro de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088 Hermosillo, Sonora, 83190 (Mexico)

1996-07-01

Thermoluminescence and optical absorption measurements have been carried out in KBr:Eu{sup 2+} crystals irradiated with monochromatic UV light (200-300 nm) and x-rays at room temperature. For UV- and x-irradiated crystals strong similarities between the thermoluminescence glow curves have been found, suggesting that the low-energy UV radiation produces the same defects as produced by x-irradiation in this material. The thermoluminescence glow curves are composed of six glow peaks located at 337, 383, 403, 435, 475 and 509 K. Thermal annealing experiments in previously irradiated crystals show clearly a correlation between the glow peak located at 383 K and the F-centre thermal bleaching process. Also, the excitation spectrum for each thermoluminescence glow peak has been investigated, showing that the low-energy radiation induces the formation of F centres. (author)

X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors

International Nuclear Information System (INIS)

Nelson, A. J.; Voss, L. F.; Beck, P. R.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Lee, J.-S.; Kim, H.; Cirignano, L.; Shah, K.

2013-01-01

We subjected device-grade TlBr to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl 2 , Br:MeOH and HF solutions. High-resolution photoemission measurements on the valence band electronic structure and Tl 4f, Br 3d, Cl 2p and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence band electronic structure were correlated with the goal of optimizing the long-term stability and radiation response

Room temperature superconductors

International Nuclear Information System (INIS)

Sleight, A.W.

1995-01-01

If the Holy Grail of room temperature superconductivity could be achieved, the impact on could be enormous. However, a useful room temperature superconductor for most applications must possess a T c somewhat above room temperature and must be capable of sustaining superconductivity in the presence of magnetic fields while carrying a significant current load. The authors will return to the subject of just what characteristics one might seek for a compound to be a room temperature superconductor. 30 refs., 3 figs., 1 tab

Radiation detectors

International Nuclear Information System (INIS)

2013-01-01

This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

Improved Growth Methods for LaBr3 Scintillation Radiation Detectors

International Nuclear Information System (INIS)

McGregor, Douglas S.

2011-01-01

The objective is to develop advanced materials for deployment as high-resolution gamma ray detectors. Both LaBr3 and CeBr3 are advanced scintillation materials, and will be studied in this research. Prototype devices, in collaboration Sandia National Laboratories, will be demonstrated along with recommendations for mass production and deployment. It is anticipated that improved methods of crystal growth will yield larger single crystals of LaBr3 for deployable room-temperature operated gamma radiation spectrometers. The growth methods will be characterized. The LaBr3 and CeBr3 scintillation crystals will be characterized for light yield, spectral resolution, and for hardness.

Epitaxial silicon detectors for particle tracking-Radiation tolerance at extreme hadron fluences

International Nuclear Information System (INIS)

Lindstroem, Gunnar; Dolenc, Irena; Fretwurst, Eckhart; Hoenniger, Frank; Kramberger, Gregor; Moll, Michael; Nossarzewska, Elsbieta; Pintilie, Ioana; Roeder, Ralf

2006-01-01

Diodes processed on n-type epitaxial silicon with a thickness of 25, 50 and 75 μm had been irradiated with reactor neutrons and high-energy protons (24 GeV/c) up to integrated fluences of Φ eq =10 16 cm -2 . Systematic experiments on radiation-induced damage effects revealed the following results: in contrast to standard and oxygen-enriched float zone (FZ) silicon devices no space charge sign inversion was observed after irradiation. It is shown that the radiation-generated concentration of deep acceptors, dominating the behavior of n-type FZ diodes, is compensated by creation of shallow donors. Thus a positive space charge is maintained throughout the irradiation up to the highest fluence and even during prolonged elevated-temperature annealing cycles. Defect analysis studies using thermally stimulated current measurements attribute the effect to a damage-induced shallow donor at E C -0.23 eV. It is argued that, as in the case of thermal donors, oxygen dimers, out diffusing from the Cz substrate during the diode processing, are responsible precursers. Results from extensive annealing experiments at elevated temperatures are verified by comparison with prolonged room-temperature annealing. These results showed that in contrast to FZ detectors, which always have to be cooled, room-temperature storage during beam off periods of future elementary particle physics experiments would even be beneficial for n-type epi-silicon detectors. A dedicated experiment at CERN-PS had successfully proven this expectation. It was verified, that in such a scenario the depletion voltage for the epi-detector could always be kept at a moderate level throughout the full S-LHC operation (foreseen upgrade of the large hadron collider). Practically no difference with respect to FZ-silicon devices was found in the damage-induced bulk generation current. The charge trapping measured with 90 Sr electrons (mip's) is also almost identical to what was expected. A charge collection efficiency of

Epitaxial silicon detectors for particle tracking-Radiation tolerance at extreme hadron fluences

Energy Technology Data Exchange (ETDEWEB)

Lindstroem, Gunnar [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany)]. E-mail: gunnar.lindstroem@desy.de; Dolenc, Irena [Jozef Stefan Institute, University of Ljubljana, Ljubljana, 100 (Slovenia); Fretwurst, Eckhart [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany); Hoenniger, Frank [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany); Kramberger, Gregor [Jozef Stefan Institute, University of Ljubljana, Ljubljana, 100 (Slovenia); Moll, Michael [CERN, Geneva, 1211 (Switzerland); Nossarzewska, Elsbieta [ITME, Institute for Electronocs Materials Technology, Warsaw, 01919 (Poland); Pintilie, Ioana [National Institute of Materials Physics, Bucharest, 077125 (Romania); Roeder, Ralf [CiS Institute for Microsensors gGmbH, Erfurt, 99099 (Germany)

2006-11-30

Diodes processed on n-type epitaxial silicon with a thickness of 25, 50 and 75 {mu}m had been irradiated with reactor neutrons and high-energy protons (24 GeV/c) up to integrated fluences of {phi} {sub eq}=10{sup 16} cm{sup -2}. Systematic experiments on radiation-induced damage effects revealed the following results: in contrast to standard and oxygen-enriched float zone (FZ) silicon devices no space charge sign inversion was observed after irradiation. It is shown that the radiation-generated concentration of deep acceptors, dominating the behavior of n-type FZ diodes, is compensated by creation of shallow donors. Thus a positive space charge is maintained throughout the irradiation up to the highest fluence and even during prolonged elevated-temperature annealing cycles. Defect analysis studies using thermally stimulated current measurements attribute the effect to a damage-induced shallow donor at E {sub C}-0.23 eV. It is argued that, as in the case of thermal donors, oxygen dimers, out diffusing from the Cz substrate during the diode processing, are responsible precursers. Results from extensive annealing experiments at elevated temperatures are verified by comparison with prolonged room-temperature annealing. These results showed that in contrast to FZ detectors, which always have to be cooled, room-temperature storage during beam off periods of future elementary particle physics experiments would even be beneficial for n-type epi-silicon detectors. A dedicated experiment at CERN-PS had successfully proven this expectation. It was verified, that in such a scenario the depletion voltage for the epi-detector could always be kept at a moderate level throughout the full S-LHC operation (foreseen upgrade of the large hadron collider). Practically no difference with respect to FZ-silicon devices was found in the damage-induced bulk generation current. The charge trapping measured with {sup 90}Sr electrons (mip's) is also almost identical to what was expected

Application of a radiation detector in the interdisciplinary study. 1. Portable fluorescent X-ray analysis using the Si-PIN photodiode

International Nuclear Information System (INIS)

Ito, Yutaka

2000-01-01

As a semiconductor used for X-ray detector has excellent resolution, it must be cooled by liquid nitrogen at its use, which is a limitation on its actual use and applications. Then, a compound detector with wider bandwidth such as CdTe and HgI 2 has conventionally been used to attempt to use the detector at room temperature. Here was adopted an Si-PIN photodiode for a representative small type semiconductor detector unnecessary for liquid nitrogen, to introduce small and portable fluorescent X-ray analyzer for its application. As Si-PIN can work at room temperature, it has large leak current and insufficiently spread empty phase, so it is used by cooling due to Peltier element and so on. Then, here was used an X-ray detector, XR-100CR of AMPTEK Inc. composed of Si-PIN photodiode and a Pre-AMP. And, for a portable fluorescent X-ray analyzer, the Si-PIN photodiode detector of AMPTEK Inc., and a closely sealed small radiation source of 50 μ Ci 241 Am for excitation of X-ray in specimen were used. Its working principle consists of excitation of elements in a specimen with X- and gamma-ray from 241 Am, and detection of emitted fluorescent X-ray with Si-PIN photodiode. (G.K.)

Cryogenic and radiation hard ASIC design for large format NIR/SWIR detector

Science.gov (United States)

Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

2014-10-01

An ASIC is developed to control and data quantization for large format NIR/SWIR detector arrays. Both cryogenic and space radiation environment issue are considered during the design. Therefore it can be integrated in the cryogenic chamber, which reduces significantly the vast amount of long wires going in and out the cryogenic chamber, i.e. benefits EMI and noise concerns, as well as the power consumption of cooling system and interfacing circuits. In this paper, we will describe the development of this prototype ASIC for image sensor driving and signal processing as well as the testing in both room and cryogenic temperature.

Development of the mercury iodide semiconductor crystal for application as a radiation detector

International Nuclear Information System (INIS)

Martins, Joao Francisco Trencher

2011-01-01

In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

In-room CT techniques for image-guided radiation therapy

International Nuclear Information System (INIS)

Ma, C.-M. Charlie; Paskalev, Kamen M.S.

2006-01-01

Accurate patient setup and target localization are essential to advanced radiation therapy treatment. Significant improvement has been made recently with the development of image-guided radiation therapy, in which image guidance facilitates short treatment course and high dose per fraction radiotherapy, aiming at improving tumor control and quality of life. Many imaging modalities are being investigated, including x-ray computed tomography (CT), ultrasound imaging, positron emission tomography, magnetic resonant imaging, magnetic resonant spectroscopic imaging, and kV/MV imaging with flat panel detectors. These developments provide unique imaging techniques and methods for patient setup and target localization. Some of them are different; some are complementary. This paper reviews the currently available kV x-ray CT systems used in the radiation treatment room, with a focus on the CT-on-rails systems, which are diagnostic CT scanners moving on rails installed in the treatment room. We will describe the system hardware including configurations, specifications, operation principles, and functionality. We will review software development for image fusion, structure recognition, deformation correction, target localization, and alignment. Issues related to the clinical implementation of in-room CT techniques in routine procedures are discussed, including acceptance testing and quality assurance. Clinical applications of the in-room CT systems for patient setup, target localization, and adaptive therapy are also reviewed for advanced radiotherapy treatments

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

Exploiting fast detectors to enter a new dimension in room-temperature crystallography

International Nuclear Information System (INIS)

Owen, Robin L.; Paterson, Neil; Axford, Danny; Aishima, Jun; Schulze-Briese, Clemens; Ren, Jingshan; Fry, Elizabeth E.; Stuart, David I.; Evans, Gwyndaf

2014-01-01

A departure from a linear or an exponential decay in the diffracting power of macromolecular crystals is observed and accounted for through consideration of a multi-state sequential model. A departure from a linear or an exponential intensity decay in the diffracting power of protein crystals as a function of absorbed dose is reported. The observation of a lag phase raises the possibility of collecting significantly more data from crystals held at room temperature before an intolerable intensity decay is reached. A simple model accounting for the form of the intensity decay is reintroduced and is applied for the first time to high frame-rate room-temperature data collection

Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

CERN Document Server

Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

2002-01-01

High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

International Nuclear Information System (INIS)

Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

2014-01-01

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

Nuclear radiation detectors

International Nuclear Information System (INIS)

Kapoor, S.S.; Ramamurthy, V.S.

1986-01-01

The present monograph is intended to treat the commonly used detectors in the field of nuclear physics covering important developments of the recent years. After a general introduction, a brief account of interaction of radiation with matter relevant to the processes in radiation detection is given in Chapter II. In addition to the ionization chamber, proportional counters and Geiger Mueller counters, several gas-filled detectors of advanced design such as those recently developed for heavy ion physics and other types of studies have been covered in Chapter III. Semiconductor detectors are dealt with in Chapter IV. The scintillation detectors which function by sensing the photons emitted by the luminescence process during the interaction of the impinging radiation with the scintillation detector medium are described in Chapter V. The topic of neutron detectors is covered in Chapter VI, as in this case the emphasis is more on the method of neutron detection rather than on detector type. Electronic instrumentation related to signal pulse processing dealt with in Chapter VII. The track etch detectors based on the visualization of the track of the impinging charge particle have also been briefly covered in the last chapter. The scope of this monograph is confined to detectors commonly used in low and medium energy nuclear physics research and applications of nuclear techniques. The monograph is intended for post-graduate students and those beginning to work with the radiation detectors. (author)

Radiation emitter-detector package

International Nuclear Information System (INIS)

O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

1978-01-01

Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1997-01-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

International Nuclear Information System (INIS)

Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

1998-01-01

The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

Short course on the temperature detector system

International Nuclear Information System (INIS)

Anderson, R.

1977-09-01

In the SLAC linac, a slow temperature rise may occur from the continuous scraping of the beam on the vacuum chamber wall. In places where this is likely to occur, surface temperature sensors are mounted on the outside of the vacuum chambers and are arranged to trip the beam if the temperature exceeds a preset level. In addition to vacuum chamber surface temperature measurements, water temperature measurements are made on the cooling water supply and return line of slits, collimators, water-cooled vacuum chambers, and dumps. In areas where the radiation levels are very high and where measurements have to be made in the radioactive cooling water lines, a stainless steel thermal well is welded into the pipe at each measuring location and a radiation-resistant immersion sensor is screwed into the well. Where the environment is less severe, similar but slightly less expensive sensors are used as direct immersion devices with no thermal wells. A discussion is given of: (1) temperature sensors; (2) temperature detector card types; (3) digital temperature readout; (4) detector card calibration; (5) line resistance equalization; and (6) operational and maintenance problems

Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

Science.gov (United States)

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

Development of CVD diamond radiation detectors

CERN Document Server

Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

1998-01-01

Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

Radiation damage resistance in mercuric iodide X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Patt, B E; Dolin, R C; Devore, T M; Markakis, J M [EG and G Energy Measurements, Inc., Goleta, CA (USA); Iwanczyk, J S; Dorri, N [Xsirius, Inc., Marina del Rey, CA (USA); Trombka, J [National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center

1990-12-20

Mercuric iodide (HgI{sub 2}) radiation detectors show great potential as ambient-temperature solid-state detectors for X-rays, gamma rays and visible light, with parameters that are competitive with existing technologies. In a previous experiment, HgI{sub 2} detectors irradiated with 10 MeV protons/cm{sup 2} exhibited no damage. The 10 MeV protons represent only the low range of the spectrum of energies that are important. An experiment has been conducted at the Saturne accelerator facility at Saclay, France, to determine the susceptibility of these detectors to radiation damage by high-energy (1.5 GeV) protons. The detectors were irradiated to a fluence of 10{sup 8} protons/cm{sup 2}. This fluence is equivalent to the cosmic radiation expected in a one-year period in space. The resolution of the detectors was measured as a function of the integral dose. No degradation in the response of any of the detectors or spectrometers was seen. It is clear from this data that HgI{sub 2} has extremely high radiation-damage resistance, exceeding that of most other semiconductor materials used for radiation detectors. Based on the results shown to date, HgI{sub 2} detectors are suitable for applications in which they may be exposed to high integral dose levels. (orig.).

A conductive surface coating for Si-CNT radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Valentini, Antonio, E-mail: antonio.valentini@ba.infn.it [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); Valentini, Marco [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Ditaranto, Nicoletta [Dipartimento di Chimica, Università degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); Melisi, Domenico [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Aramo, Carla, E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, Antonio [CNR-SPIN U.O.S. di Napoli and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Casamassima, Giuseppe [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Cilmo, Marco [INFN, Sezione di Napoli, and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, Emanuele [INFN, Sezione di Perugia, and Dipartimento di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); Grossi, Valentina [INFN, Sezione di L’Aquila, and Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio 10 Coppito, 67100 L’Aquila (Italy); and others

2015-08-01

Silicon–Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon. - Highlights: • ITO was deposited by Ion Beam Sputtering on MWCNT. • ITO on CNT makes an inter-diffusion layer of the order of one hundred nanometers. • Improvements of quantum efficiency of photon detectors based on CNT with ITO.

Self-powered radiation detector

International Nuclear Information System (INIS)

Playfoot, K.C.; Bauer, R.F.; Goldstein, N.P.

1980-01-01

This invention relates to a self powered radiation detector requiring no excitation potential to generate a signal indicating a radiation flux. Such detectors comprise two electrically insulated electrodes, at a distance from each other. These electrodes are made of conducting materials having a different response for neutron and/or gamma ray radiation flux levels, as in nuclear power stations. This elongated detector generates an electric signal in terms of an incident flux of radiations cooperating with coaxial conductors insulated from each other and with different radiation reaction characteristics. The conductor with the greatest reaction to the radiations forms the central emitting electrode and the conductor with the least reaction to the radiations forms a tubular coaxial collecting electrode. The rhodium or cobalt tubular emitting electrode contains a ductile central conducting cable placed along the longitudinal axis of the detector. The latter is in high nickel steel with a low reaction to radiation [fr

Cryogenic Tracking Detectors

CERN Multimedia

Luukka, P R; Tuominen, E M; Mikuz, M

2002-01-01

The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN$_2$) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result The first goal of the approved extension of the RD39 program is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particular we shall concentrate on processes and materials that could significantly reduce th...

Mechanical properties of polymer matrix composites at 77 K and at room temperature after irradiation with 60Co γ-rays

International Nuclear Information System (INIS)

Egusa, S.; Hagiwara, M.

1986-01-01

Ten different polymer matrix composites were irradiated with 60 Co γ-rays at room temperature, and were examined with regard to the mechanical properties at 77 K and at room temperature. The radiation resistance of these composites depends primarily on the radiation resistance of matrix resins, which increases in the order diglycidyl ether of bisphenol A < tetraglycidyl diaminodiphenyl methane < Kerimid 601. Comparison of the mechanical properties tested at 77 K and at room temperature demonstrates that the extent of radiation-induced decrease in the composite strength is appreciably greater in the 77 K test than in the room temperature test. (author)

Foam radiators for transition radiation detectors

International Nuclear Information System (INIS)

Chernyatin, V.; Dolgoshein, B.; Gavrilenko, I.; Potekhin, M.; Romaniouk, A.; Sosnovtsev, V.

1993-01-01

A wide variety of foam radiators, potentially useful in the design of a transition radiation detector, the possible particle identification tool in collider experiments, have been tested in the beam. Various characteristics of these radiators are compared, and the conclusion is reached that certain brands of polyethylene foam are best suited for use in the detector. Comparison is made with a 'traditional' radiator, which is a periodic structure of plastic foils. (orig.)

Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

2014-11-17

The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

Oxide layers for silicon detector protection against enviroment effects

International Nuclear Information System (INIS)

Bel'tsazh, E.; Brylovska, I.; Valerian, M.

1986-01-01

It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

Advanced Space Radiation Detector Technology Development

Science.gov (United States)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Silicon radiation detectors

International Nuclear Information System (INIS)

Lutz, G.

1995-01-01

An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm

Energy Technology Data Exchange (ETDEWEB)

Babichev, A. V. [Connector Optics LLC (Russian Federation); Bousseksou, A. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Nikitina, E. V. [Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E. [Peter-the-Great Saint-Petersburg Polytechnic University (Russian Federation); Novikov, I. I.; Karachinsky, L. Ya.; Egorov, A. Yu., E-mail: anton.egorov@connector-optics.com [Connector Optics LLC (Russian Federation)

2016-10-15

The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunction of InGaAs/InAlAs alloys is grown by molecular-beam epitaxy and incorporates 60 identical cascades. The threshold current density of the stripe laser 1.4 mm long and 22 μm wide is ~4.8 kA/cm{sup 2} at a temperature of 303 K. The maximum power of the optical-radiation output from one QCL face, recorded by a detector, is 88 mW. The actual optical-power output from one QCL face is no less than 150 mW. The results obtained and possible ways of optimizing the structure of the developed quantum-cascade lasers are discussed.

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Radiation detectors laboratory; Laboratorio de detectores de radiacion

Energy Technology Data Exchange (ETDEWEB)

Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Radiation protection in the operating room

International Nuclear Information System (INIS)

Kunz, B.; Stargardt, A.

1978-01-01

On the basis of legally provided area dose measurements and time records of fluoroscopic examinations during the operation, radiation doses to medical personnel and patients are evaluated. Adequate radiation protection measures and a careful behaviour in the operating room keep the radiation exposure to the personnel below the maximum permissible exposure. Taking into account the continuous personnel radiation monitoring and medical supervision, radiation hazards in the operating room can be considered low

Basic Radiation Detectors. Chapter 6

Energy Technology Data Exchange (ETDEWEB)

Van Eijk, C. W.E. [Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands)

2014-12-15

Radiation detectors are of paramount importance in nuclear medicine. The detectors provide a wide range of information including the radiation dose of a laboratory worker and the positron emission tomography (PET) image of a patient. Consequently, detectors with strongly differing specifications are used. In this chapter, general aspects of detectors are discussed.

Non-local electrical spin injection and detection in germanium at room temperature

Science.gov (United States)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

New detectors of neutron, gamma- and X-radiations

CERN Document Server

Lobanov, N S

2002-01-01

Paper presents new detectors to record absorbed doses of neutron, gamma- and X-ray radiations within 0-1500 Mrad range. DBF dosimeter is based on dibutyl phthalate. EDS dosimeter is based on epoxy (epoxide) resin, while SD 5-40 detector is based on a mixture of dibutyl phthalate and epoxy resin. Paper describes experimental techniques to calibrate and interprets the measurement results of absorbed doses for all detectors. All three detectors cover 0-30000 Mrad measured does range. The accuracy of measurements is +- 10% independent (practically) of irradiation dose rates within 20-2000 rad/s limits under 20-80 deg C temperature

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

Science.gov (United States)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

Influences of scattering radiation in a TLD irradiation room, 2

International Nuclear Information System (INIS)

Suzuki, Osamu; Suwa, Shigeo

1985-01-01

The influence of scattering radiation (SR) on radiation dose rate (DR) in a TLD irradiation room was assessed. A single SD from a standard TLD apparatus, i.e., an acrylic or aluminum table, was examined. The maximum DR was attained at approximately 80 cm from the radiation source. Energy spectra of SR ranged up to the energy of direct radiation beam. Circular SD at one m from the radiation source, which contributed to DR to the direct radiation beam, was almost homogeneous. SD was large near the irradiation table, and the influence of SD on DR became smaller with SD being vertically farther from the apparatus. The influence of SD on RD to the direct radiation beam became less with an increase in gamma ray energy. At one m from the radiation source, 6 - 7 % of SD contributed to DR to the direct radiation beam for 0.662 MeV of gamma ray. This figure was one half of that with NaI (Tl) scintillation detector. (Namekawa, K.)

Development of a Cryogenic Radiation Detector for Mapping Radio Frequency Superconducting Cavity Field Emissions

CERN Document Server

Dotson, Danny W

2005-01-01

There is a relationship between field emissions in a Super Conducting RF cavity and the production of radiation (mostly X-rays). External (room temperature) detectors are shielded from the onset of low energy X-rays by the vacuum and cryogenic stainless steel module walls. An internal measuring system for mapping field emissions would assist scientists and engineers in perfecting surface deposition and acid washing module surfaces. Two measurement systems are undergoing cryogenic testing at JLab. One is an active CsI photodiode array and the second is an X-ray film camera. The CsI array has operated sucessfully in a cavity in liquid Helium but saturated at higher power due to scattering in the cavity. A shield with an aperature similar to the X-ray film detector is being designed for the next series of tests which will be completed before PAC-05.

Solid state radiation detector system

International Nuclear Information System (INIS)

1977-01-01

A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

Superlattice electroabsorption radiation detector

International Nuclear Information System (INIS)

Cooke, B.J.

1993-06-01

This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

Nickel in silicon: Room-temperature in-diffusion and interaction with radiation defects

Energy Technology Data Exchange (ETDEWEB)

Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

2017-07-15

Nickel is incorporated into silicon wafers during chemomechanical polishing in an alkaline Ni-contaminated slurry at room temperature. The nickel in-diffusion is detected by DLTS depth profiles of a novel Ni{sub 183} level, which is formed due to a reaction between the diffusing nickel and the VO centers introduced before the polishing. The Ni{sub 183} profile extends up to 10 μm after a 2 min polishing. The available data provide a lower estimate for the room-temperature nickel diffusivity D{sub Ni} > 10{sup -9} cm{sup 2} s{sup -1}. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermoluminescence dependence on the wavelength of monochromatic UV-radiation in Cu-doped KCl and KBr at room temperature

Energy Technology Data Exchange (ETDEWEB)

Perez R, A.; Piters, T.; Aceves, R.; Rodriguez M, R.; Perez S, R., E-mail: rperez@cifus.uson.mx [Universidad de Sonora, Departamento de Investigaciones en Fisica, Apdo. Postal 5-088, 83190 Hermosillo, Sonora (Mexico)

2014-08-15

Thermoluminescence (Tl) dependence on the UV irradiation wavelengths from 200 to 500 nm in Cu-doped KCl and KBr crystals with different thermal treatment has been analyzed. Spectrum of the Tl intensity of each material show lower intensity at wavelengths longer than 420 nm. The Tl intensity depends on the irradiation wavelength. Structure of the Tl intensity spectrum of each sample is very similar to the structure of its optical absorption spectrum, indicating that at each wavelength, monochromatic radiation is absorbed to produce electronic transitions and electron hole pairs. Thermoluminescence of materials with thermal treatment at high temperature shows electron-hole trapping with less efficiency. The results show that Cu-doped alkali-halide materials are good detectors of a wide range of UV monochromatic radiations and could be used to measure UV radiation doses. (Author)

Thermoluminescence dependence on the wavelength of monochromatic UV-radiation in Cu-doped KCl and KBr at room temperature

International Nuclear Information System (INIS)

Perez R, A.; Piters, T.; Aceves, R.; Rodriguez M, R.; Perez S, R.

2014-08-01

Thermoluminescence (Tl) dependence on the UV irradiation wavelengths from 200 to 500 nm in Cu-doped KCl and KBr crystals with different thermal treatment has been analyzed. Spectrum of the Tl intensity of each material show lower intensity at wavelengths longer than 420 nm. The Tl intensity depends on the irradiation wavelength. Structure of the Tl intensity spectrum of each sample is very similar to the structure of its optical absorption spectrum, indicating that at each wavelength, monochromatic radiation is absorbed to produce electronic transitions and electron hole pairs. Thermoluminescence of materials with thermal treatment at high temperature shows electron-hole trapping with less efficiency. The results show that Cu-doped alkali-halide materials are good detectors of a wide range of UV monochromatic radiations and could be used to measure UV radiation doses. (Author)

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Science.gov (United States)

Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

Characterization of Silicon Photomultiplier Detectors using Cosmic Radiation

Science.gov (United States)

Zavala, Favian; Castro, Juan; Niduaza, Rexavalmar; Wedel, Zachary; Fan, Sewan; Ritt, Stefan; Fatuzzo, Laura

2014-03-01

The silicon photomultiplier light detector has gained a lot of attention lately in fields such as particle physics, astrophysics, and medical physics. Its popularity stems from its lower cost, compact size, insensitivity to magnetic fields, and its excellent ability to distinguish a quantized number of photons. They are normally operated at room temperature and biased above their breakdown voltages. As such, they may also exhibit properties that may hinder their optimal operation which include a thermally induced high dark count rate, after pulse effects, and cross talk from photons in nearby pixels. At this poster session, we describe our data analysis and our endeavor to characterize the multipixel photon counter (MPPC) detectors from Hamamatsu under different bias voltages and temperature conditions. Particularly, we describe our setup which uses cosmic rays to induce scintillation light delivered to the detector by wavelength shifting optical fibers and the use of a fast 1 GHz waveform sampler, the domino ring sampler (DRS4) digitizer board. Department of Education grant number P031S90007.

Workshops on radiation imaging detectors

International Nuclear Information System (INIS)

Sochinskii, N.V.; Sun, G.C.; Kostamo, P.; Silenas, A.; Saynatjoki, A.; Grant, J.; Owens, A.; Kozorezov, A.G.; Noschis, E.; Van Eijk, C.; Nagarkar, V.; Sekiya, H.; Pribat, D.; Campbell, M.; Lundgren, J.; Arques, M.; Gabrielli, A.; Padmore, H.; Maiorino, M.; Volpert, M.; Lebrun, F.; Van der Putten, S.; Pickford, A.; Barnsley, R.; Anton, M.E.G.; Mitschke, M.; Gros d'Aillon, E.; Frojdh, C.; Norlin, B.; Marchal, J.; Quattrocchi, M.; Stohr, U.; Bethke, K.; Bronnimann, C.H.; Pouvesle, J.M.; Hoheisel, M.; Clemens, J.C.; Gallin-Martel, M.L.; Bergamaschi, A.; Redondo-Fernandez, I.; Gal, O.; Kwiatowski, K.; Montesi, M.C.; Smith, K.

2005-01-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications

Workshops on radiation imaging detectors

Energy Technology Data Exchange (ETDEWEB)

Sochinskii, N V; Sun, G C; Kostamo, P; Silenas, A; Saynatjoki, A; Grant, J; Owens, A; Kozorezov, A G; Noschis, E; Van Eijk, C; Nagarkar, V; Sekiya, H; Pribat, D; Campbell, M; Lundgren, J; Arques, M; Gabrielli, A; Padmore, H; Maiorino, M; Volpert, M; Lebrun, F; Van der Putten, S; Pickford, A; Barnsley, R; Anton, M E.G.; Mitschke, M; Gros d' Aillon, E; Frojdh, C; Norlin, B; Marchal, J; Quattrocchi, M; Stohr, U; Bethke, K; Bronnimann, C H; Pouvesle, J M; Hoheisel, M; Clemens, J C; Gallin-Martel, M L; Bergamaschi, A; Redondo-Fernandez, I; Gal, O; Kwiatowski, K; Montesi, M C; Smith, K

2005-07-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications.

Self-powered radiation detectors

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1982-01-01

A self-powered nuclear radiation detector has an emitter electrode of an alloy of a first major constituent metal having a desired high radiation response, and a second minor constituent which imparts to the alloy a desired thermal or mechanical characteristic without diminishing the desired high radiation response. A gamma responsive self-powered detector is detailed which has an emitter with lead as the major constituent, with the minor constituent selected from aluminum, copper, nickel, platinum, or zinc. (author)

Technologies pioneered by LHC. Superconducting magnet and radiation-tolerant tracking detector

International Nuclear Information System (INIS)

Yamamoto, Akira; Unno, Yoshinobu

2007-01-01

In the LHC project of proton-proton collisions exploring the energy frontier, superconducting magnets and radiation-tolerant tracking detector play fundamental roles as key technologies. The superconducting magnets contribute to bending and focusing particle beam by using high magnetic field created with the NbTi superconductor cooled to the superfluid temperature of He (1.9 K). In order to overcome the unprecedented radiation damage and to capture the particles emerging with high energy and high density, the large area and highly radiation-tolerant silicon semiconductor tracking detector has been developed for the LHC experiment. (author)

Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

CERN Document Server

Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

2007-01-01

There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

Status of radiation detector and neutron monitor technology

CERN Document Server

Kim, Y K; Ha, J H; Han, S H; Hong, S B; Hwang, I K; Lee, W G; Moon, B S; Park, S H; Song, M H

2002-01-01

In this report, we describe the current states of the radiation detection technology, detectors for industrial application, and neutron monitors. We also survey the new technologies being applied to this field. The method to detect radiation is the measurement of the observable secondary effect from the interaction between incident radiation and detector material, such as ionization, excitation, fluorescence, and chemical reaction. The radiation detectors can be categorized into gas detectors, scintillation detectors, and semiconductor detectors according to major effects and main applications. This report contains the current status and operational principles of these detectors. The application fields of radiation detectors are industrial measurement system, in-core neutron monitor, medical radiation diagnostic device, nondestructive inspection device, environmental radiation monitoring, cosmic-ray measurement, security system, fundamental science experiment, and radiation measurement standardization. The st...

Radiation detector

International Nuclear Information System (INIS)

Gillies, W.

1980-01-01

The radiation detector for measuring e.g. a neutron flux consists of a central emitter, an insulating shell arranged around it, and a tube-shaped collector enclosing both. The emitter itself is composed of a great number of stranded, spiral wires of small diameter giving a defined flexibility to the detector. For emitter material Pt, Rh, V, Co, Ce, Os or Ta may be used. (DG) [de

High-Operating Temperature HgCdTe: A Vision for the Near Future

Science.gov (United States)

Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

2016-09-01

We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the

Technology development of p-type microstrip detectors with radiation hard p-spray isolation

International Nuclear Information System (INIS)

Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

2006-01-01

A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

Photovoltaic x-ray detectors based on the GaAs epitaxial structures

CERN Document Server

Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

2002-01-01

The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Ionizing radiation detector

Science.gov (United States)

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Electret radiation detector

International Nuclear Information System (INIS)

Kubu, M.

1981-01-01

The electret radiation detector consists of 30 to 35% of bee wax and of 65 to 70% of colophony. It is mainly the induction conductivity of charo.es between the dipoles in the electret which is used for detection. In the manufacture of the detector, the average atomic number of the electret can be altered by adding various compounds, such as ZnO, which also increases efficiency for gamma radiation. An alpha or beta emitter can also be built-in in the electret. (B.S.)

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

Directory of Open Access Journals (Sweden)

Brodyn, M.S.

2014-03-01

Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Energy Technology Data Exchange (ETDEWEB)

Verbitskaya, Elena, E-mail: elena.verbitskaya@cern.ch [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Eremin, Vladimir; Zabrodskii, Andrei [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R. [CERN, CH-1211, Geneva 23 (Switzerland); Egorov, Nicolai [Research Institute of Material Science and Technology, 4 Passage 4806, Moscow, Zelenograd 124460 (Russian Federation); Härkönen, Jaakko [Helsinki Institute of Physics, P.O.Box 64 (Gustaf Hallströmin katu 2) FI-00014 University of Helsinki (Finland)

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×10{sup 16} p/cm{sup 2}. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment. - Highlights: • Si detectors irradiated in situ at 1.9 K by 23 GeV protons are further studied. • Trapping parameters are derived from the fits of collected charge vs. fluence data. • Acceptor-type defects are likely to be induced along with donor-type ones. • Trapping of holes has a dominating effect on the collected charge degradation. • New tests are planned to gain deeper insight

Radiation detectors of PIN type for X-rays

International Nuclear Information System (INIS)

Ramirez-Jimenez, F.J.

2003-01-01

In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

Development of gallium arsenide gamma spectrometric detector

International Nuclear Information System (INIS)

Kobayashi, T.; Kuru, I.

1975-03-01

GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by

Advances in the project about Pin type silicon radiation detectors

International Nuclear Information System (INIS)

Ramirez F, J.; Cerdeira, A.; Aceves, M.; Diaz, A.; Estrada, M.; Rosales, P.; Cabal, A.E.; Montano L, M.; Leyva, A.

1998-01-01

The obtained advances in the collaboration project ININ-CINVESTAV about development of Pin type semiconductor radiation detectors here are presented. It has been characterized the response to different types of radiation made in CINVESTAV and INAOE. Measurements have been realized with different types of sensitive to charge preamplifiers determining the main characteristics which must be executed to be able to be employed with low capacitance detectors. As applications it has been possible to measure the irradiation time in a mammography machine and X-ray energy spectra have been obtained in the order of 14 KeV, with 4 KeV at ambient temperature. The future actions of project have been indicated and the possible applications of these detectors. (Author)

Radiation detectors based by polymer materials

International Nuclear Information System (INIS)

Cherestes, Margareta; Cherestes, Codrut; Constantinescu, Livia

2004-01-01

Scintillation counters make use of the property of certain chemical compounds to emit short light pulses after excitation produced by the passage of charged particles or photons of high energy. These flashes of light are detected by a photomultiplier tube that converts the photons into a voltage pulse. The light emitted from the detector also can be collected, focussed and dispersed by a CCD detector. The study of the evolution of the light emission and of the radiation damage under irradiation is a primary topic in the development of radiation hard polymer based scintillator. Polymer scintillator thin films are used in monitoring radiation beam intensities and simultaneous counting of different radiations. Radiation detectors have characteristics which depend on: the type of radiation, the energy of radiation, and the material of the detector. Three types of polymer thin films were studied: a polyvinyltoluene based scintillator, fluorinated polyimide and PMMA. (authors)

Status of fully integrated GaAs particle detectors

International Nuclear Information System (INIS)

Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

1999-01-01

GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

Diamond radiation detectors II. CVD diamond development for radiation detectors

International Nuclear Information System (INIS)

Kania, D.R.

1997-01-01

Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

Detector and dosimeter for neutrons and other radiation

International Nuclear Information System (INIS)

Apfel, R.E.

1979-01-01

A radiation detector and dosimeter is based on the fact that a sufficiently finely-dispersed liquid suspended in a host liquid of high viscosity or gel is stable at temperatures above its normal boiling point for long periods of time provided it is protected from contact with walls, or other types of initiators which can cause volatilization or vaporization of the droplets. Radiation, and particularly neutron radiation of sufficient energy and intensity on coming in contact with such droplets can trigger volatilization. The volume of vapor evolved can then serve as a measure of radiation intensity and dosage

P-type silicon surface barrier detector used for x-ray dosimetry

International Nuclear Information System (INIS)

Yamamoto, Hisao; Hatakeyama, Satoru; Norimura, Toshiyuki; Tsuchiya, Takehiko

1983-01-01

Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15 - 50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 0 C and then decreased, though the open-circuit voltage decreased linearly. For the P- type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter. (author)

Radiation energy detector and analyzer

International Nuclear Information System (INIS)

Roberts, T.G.

1981-01-01

A radiation detector array and a method for measuring the spectral content of radiation. The radiation sensor or detector is an array or stack of thin solid-electrolyte batteries. The batteries, arranged in a stack, may be composed of independent battery cells or may be arranged so that adjacent cells share a common terminal surface. This common surface is possible since the polarity of the batteries with respect to an adjacent battery is unrestricted, allowing a reduction in component parts of the assembly and reducing the overall stack length. Additionally, a test jig or chamber for allowing rapid measurement of the voltage across each battery is disclosed. A multichannel recorder and display may be used to indicate the voltage gradient change across the cells, or a small computer may be used for rapidly converting these voltage readings to a graph of radiation intensity versus wavelength or energy. The behavior of the batteries when used as a radiation detector and analyzer are such that the voltage measurements can be made at leisure after the detector array has been exposed to the radiation, and it is not necessary to make rapid measurements as is now done

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Radiation Protection Elephants in the Room

International Nuclear Information System (INIS)

Vetter, R. J.

2004-01-01

As our system of radiological protection evolves, several significant issues loom within radiation protection discussions and publications. These issues influence the nature of epidemiological and radiobiological research and the establishment of radiation protection recommendations, standards, and regulations. These issues are like the proverbial e lephants in the room . They are large, and it is unwise to ignore them. This paper discusses the impact of three young elephants as they make their presence increasingly obvious: increased cancer susceptibility from early-life exposure to radiation, terrorism and fear of radiation, and patient safety. Increased cancer susceptibility from early-life exposure to radiation is emerging as a discussion topic related to the safety of computed tomography (CT) and other medical modalities. Shortly after publication of CT dose data, manufacturers were helping to reduce doses to children by increasing flexibility for adjustment of technique factors. Also, radiation epidemiological data are being used in the development of guidance on exposure to chemical carcinogens during early life. Re-emergence of public fear of radiation has been fueled by threats of radiological dispersion devises and confusing messages about personal decontamination, emergency room acceptance or rejection of contaminated victims, and environmental clean-up. Finally, several professional publications have characterized risk of medical radiation exposure in terms of patient deaths even though epidemiological data do not support such conclusions. All three of these elephants require excellent science and sophisticated data analysis to coax them from the room. Anecdotal communications that confuse the public should be avoided. These are not the only elephants in the room, but these three are making their presence increasingly obvious. This paper discusses the need for radiation protection professionals to rely on good science in the evolution of the system of

Towards radiation hard converter material for SiC-based fast neutron detectors

Science.gov (United States)

Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

2018-05-01

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection

Ionizing radiation detector using multimode optical fibers

International Nuclear Information System (INIS)

Suter, J.J.; Poret, J.C.; Rosen, M.; Rifkind, J.M.

1993-01-01

An optical ionizing radiation detector, based on the attenuation of 850-nm light in 50/125-μm multimode fibers, is described. The detector is especially well suited for application on spacecraft because of its small design. The detection element consists of a section of coiled fibers that has been designed to strip higher-order optical modes. Cylindrical radiation shields with atomic numbers ranging from Z = 13 (aluminum too) Z = 82 (lead) were placed around the ionizing radiation detector so that the effectiveness of the detector could be measured. By exposing the shields and the detector to 1.25-MeV cobalt 60 radiation, the mass attenuation coefficients of the shields were measured. The detector is based on the phenomenon that radiation creates optical color centers in glass fibers. Electron spin resonance spectroscopy performed on the 50/125-μm fibers showed the presence of germanium oxide and phosphorus-based color centers. The intensity of these centers is directly related to the accumulated gamma radiation

Temperature-compensated pressure detectors and transmitter for use in hostile environment

International Nuclear Information System (INIS)

Di Noia, E.J.; Breunich, T.R.

1984-01-01

A pressure or differential pressure detector suitable for use in a hostile environment, for example, under high pressure, temperature, and radiation conditions in the containment vessel of a nuclear generating plant includes as a transducer a linear variable differential transformer (LVDT) disposed within a detector housing designed to withstand temperatures of about 260 deg C. A signal detecting and conditioning circuit remote from the detector housing includes a demodulator for producing X and Y demodulated signals respectively from A and B secondary windings of the LVDT, a summing circuit for producing a temperature analog voltage X + Y, a subtractor for providing a differential pressure analog voltage X - Y, and a multiplier for multiplying the differential pressure analog voltage X - Y by a temperature compensation voltage X + Y - Ref based on the temperature analog voltage to provide a resulting temperature-compensated differential pressure analog signal. (author)

Thermal noise in mid-infrared broadband upconversion detectors

DEFF Research Database (Denmark)

Barh, Ajanta; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2018-01-01

Low noise detection with state-of-the-art mid-infrared (MIR) detectors (e.g., PbS, PbSe, InSb, HgCdTe) is a primary challenge owing to the intrinsic thermal background radiation of the low bandgap detector material itself. However, researchers have employed frequency upconversion based detectors...... of the noise-equivalent power of an UCD system. In this article, we rigorously analyze the optical power generated by frequency upconversion of the intrinsic black-body radiation in the nonlinear material itself due to the crystals residual emissivity, i.e. absorption. The thermal radiation is particularly...... prominent at the optical absorption edge of the nonlinear material even at room temperature. We consider a conventional periodically poled lithium niobate (PPLN) based MIR-UCD for the investigation. The UCD is designed to cover a broad spectral range, overlapping with the entire absorption edge of the PPLN...

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Room-temperature quantum noise limited spectrometry and methods of the same

Science.gov (United States)

Stevens, Charles G.; Tringe, Joseph W.; Cunningham, Christopher T.

2018-05-15

According to one embodiment, a heterodyne detection system for detecting light, includes: a first input aperture configured to receive first light from a scene input; a second input aperture configured to receive second light from a local oscillator input; a broadband local oscillator configured to provide the second light to the second input aperture; a dispersive element configured to disperse the first light and the second light; and a final condensing lens coupled to a detector. The final condensing lens is configured to concentrate incident light from a primary condensing lens onto the detector. The detector is configured to sense a frequency difference between the first light and the second light; and the final condensing lens comprises a plasmonic condensing lens. Methods for forming a plasmonic condensing lens to enable room temperature quantum noise limited spectrometry are also disclosed.

Radiative control of dark excitons at room temperature by nano-optical antenna-tip Purcell effect

Science.gov (United States)

Park, Kyoung-Duck; Jiang, Tao; Clark, Genevieve; Xu, Xiaodong; Raschke, Markus B.

2018-01-01

Excitons, Coulomb-bound electron-hole pairs, are elementary photo-excitations in semiconductors that can couple to light through radiative relaxation. In contrast, dark excitons (XD) show anti-parallel spin configuration with generally forbidden radiative emission. Because of their long lifetimes, these dark excitons are appealing candidates for quantum computing and optoelectronics. However, optical read-out and control of XD states has remained challenging due to their decoupling from light. Here, we present a tip-enhanced nano-optical approach to induce, switch and programmably modulate the XD emission at room temperature. Using a monolayer transition metal dichalcogenide (TMD) WSe2 on a gold substrate, we demonstrate 6 × 105-fold enhancement in dark exciton photoluminescence quantum yield achieved through coupling of the antenna-tip to the dark exciton out-of-plane optical dipole moment, with a large Purcell factor of ≥2 × 103 of the tip-sample nano-cavity. Our approach provides a facile way to harness excitonic properties in low-dimensional semiconductors offering new strategies for quantum optoelectronics.

High-resolution ion-implanted silicon detectors

International Nuclear Information System (INIS)

von Borany, J.; Schmidt, B.

1985-01-01

An account is given of the properties of silicon detectors developed at the Central Institute of Nuclear Research of the Academy of Sciences of the German Democratic Republic (Rossendorf) and made by a special planar technology using ion implantation, anodic oxidation, thermal oxidation in an oxygen atmosphere containing HCl, and annealing by pulses of 10--20 msec duration. The resolution for α particles of 5.5 MeV energy was 11.2 keV (active area A 2 ). The detectors were characterized by a low intrinsic noise (< or =5 keV), so that they could be used for spectrometry of low-energy electrons (E/sub e/< or =250 keV). In a certain range of energies (E/sub x/ = 15--60 keV) it was possible to use these detectors for spectrometry of x rays at room temperature. Examples and results of applications of detectors in radiation chemistry (investigations of backscattering of particles and nuclear reaction spectroscopy) are given. The feasibility of annealing of radiation defects in such detectors after irradiation with a large dose of charged particles is considered

Thermally stimulated investigations on diamond X-Ray detectors

International Nuclear Information System (INIS)

Tromson, D.; Bergonzo, P.; Brambilla, A.; Mer, C.; Foulon, F.; Amosov, V.N.

1999-01-01

Intrinsic diamond material is increasingly used for the fabrication of radiation detectors. However, the presence of inherent defects has a strong impact on the detector characteristics such as the time dependent stability of the detection signal. In order to draw better insights into this effect, comparative investigations of the X-ray responses with thermally stimulated current (TSC) measurements were carried out on natural diamond detectors. TSC revealed the presence of four peaks or shoulders on natural samples in the 200 to 500 K domain. Three energy levels were identified at about 0.7, 0.71 and 0.95 eV. Time dependent X-ray detector sensitivity was investigated for various initial conditions. The results give evidence of the improvement of the detection properties after having filled traps in the material by X-ray irradiation. The comparison between the X-ray response and the TSC spectra indicate that trapping levels emptied at room temperature appear to significantly affect the performance of radiation detectors. (authors)

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Signal processing for radiation detectors

CERN Document Server

Nakhostin, Mohammad

2018-01-01

This book provides a clear understanding of the principles of signal processing of radiation detectors. It puts great emphasis on the characteristics of pulses from various types of detectors and offers a full overview on the basic concepts required to understand detector signal processing systems and pulse processing techniques. Signal Processing for Radiation Detectors covers all of the important aspects of signal processing, including energy spectroscopy, timing measurements, position-sensing, pulse-shape discrimination, and radiation intensity measurement. The book encompasses a wide range of applications so that readers from different disciplines can benefit from all of the information. In addition, this resource: * Describes both analog and digital techniques of signal processing * Presents a complete compilation of digital pulse processing algorithms * Extrapolates content from more than 700 references covering classic papers as well as those of today * Demonstrates concepts with more than 340 origin...

Room temperature triplet state spectroscopy of organic semiconductors.

Science.gov (United States)

Reineke, Sebastian; Baldo, Marc A

2014-01-21

Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

The Use of Radiation Detectors in Medicine: Radiation Detectors for Morphological Imaging (1/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

The Use of Radiation Detectors in Medicine: Radiation Detectors for Functional Imaging (2/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

Semiconductor radiation detectors technology and applications

CERN Document Server

2018-01-01

The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

Passivation layer of Si/Li ionizing radiation detectors

International Nuclear Information System (INIS)

Vidra, M.; Reznicek, L.

1992-01-01

The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

Semiconductor radiation detector

Science.gov (United States)

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Structure determination of an integral membrane protein at room temperature from crystals in situ

International Nuclear Information System (INIS)

Axford, Danny; Foadi, James; Hu, Nien-Jen; Choudhury, Hassanul Ghani; Iwata, So; Beis, Konstantinos; Evans, Gwyndaf; Alguel, Yilmaz

2015-01-01

The X-ray structure determination of an integral membrane protein using synchrotron diffraction data measured in situ at room temperature is demonstrated. The structure determination of an integral membrane protein using synchrotron X-ray diffraction data collected at room temperature directly in vapour-diffusion crystallization plates (in situ) is demonstrated. Exposing the crystals in situ eliminates manual sample handling and, since it is performed at room temperature, removes the complication of cryoprotection and potential structural anomalies induced by sample cryocooling. Essential to the method is the ability to limit radiation damage by recording a small amount of data per sample from many samples and subsequently assembling the resulting data sets using specialized software. The validity of this procedure is established by the structure determination of Haemophilus influenza TehA at 2.3 Å resolution. The method presented offers an effective protocol for the fast and efficient determination of membrane-protein structures at room temperature using third-generation synchrotron beamlines

Structure determination of an integral membrane protein at room temperature from crystals in situ

Energy Technology Data Exchange (ETDEWEB)

Axford, Danny [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Foadi, James [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Imperial College London, London SW7 2AZ (United Kingdom); Hu, Nien-Jen; Choudhury, Hassanul Ghani [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Imperial College London, London SW7 2AZ (United Kingdom); Rutherford Appleton Laboratory, Oxfordshire OX11 0FA (United Kingdom); Iwata, So [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Imperial College London, London SW7 2AZ (United Kingdom); Rutherford Appleton Laboratory, Oxfordshire OX11 0FA (United Kingdom); Kyoto University, Kyoto 606-8501 (Japan); Beis, Konstantinos [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Imperial College London, London SW7 2AZ (United Kingdom); Rutherford Appleton Laboratory, Oxfordshire OX11 0FA (United Kingdom); Evans, Gwyndaf, E-mail: gwyndaf.evans@diamond.ac.uk [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Alguel, Yilmaz, E-mail: gwyndaf.evans@diamond.ac.uk [Diamond Light Source, Harwell Science and Innovation Campus, Oxfordshire OX11 0DE (United Kingdom); Imperial College London, London SW7 2AZ (United Kingdom); Rutherford Appleton Laboratory, Oxfordshire OX11 0FA (United Kingdom)

2015-05-14

The X-ray structure determination of an integral membrane protein using synchrotron diffraction data measured in situ at room temperature is demonstrated. The structure determination of an integral membrane protein using synchrotron X-ray diffraction data collected at room temperature directly in vapour-diffusion crystallization plates (in situ) is demonstrated. Exposing the crystals in situ eliminates manual sample handling and, since it is performed at room temperature, removes the complication of cryoprotection and potential structural anomalies induced by sample cryocooling. Essential to the method is the ability to limit radiation damage by recording a small amount of data per sample from many samples and subsequently assembling the resulting data sets using specialized software. The validity of this procedure is established by the structure determination of Haemophilus influenza TehA at 2.3 Å resolution. The method presented offers an effective protocol for the fast and efficient determination of membrane-protein structures at room temperature using third-generation synchrotron beamlines.

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Room temperature femtosecond X-ray diffraction of photosystem II microcrystals

Science.gov (United States)

Kern, Jan; Alonso-Mori, Roberto; Hellmich, Julia; Tran, Rosalie; Hattne, Johan; Laksmono, Hartawan; Glöckner, Carina; Echols, Nathaniel; Sierra, Raymond G.; Sellberg, Jonas; Lassalle-Kaiser, Benedikt; Gildea, Richard J.; Glatzel, Pieter; Grosse-Kunstleve, Ralf W.; Latimer, Matthew J.; McQueen, Trevor A.; DiFiore, Dörte; Fry, Alan R.; Messerschmidt, Marc; Miahnahri, Alan; Schafer, Donald W.; Seibert, M. Marvin; Sokaras, Dimosthenis; Weng, Tsu-Chien; Zwart, Petrus H.; White, William E.; Adams, Paul D.; Bogan, Michael J.; Boutet, Sébastien; Williams, Garth J.; Messinger, Johannes; Sauter, Nicholas K.; Zouni, Athina; Bergmann, Uwe; Yano, Junko; Yachandra, Vittal K.

2012-01-01

Most of the dioxygen on earth is generated by the oxidation of water by photosystem II (PS II) using light from the sun. This light-driven, four-photon reaction is catalyzed by the Mn4CaO5 cluster located at the lumenal side of PS II. Various X-ray studies have been carried out at cryogenic temperatures to understand the intermediate steps involved in the water oxidation mechanism. However, the necessity for collecting data at room temperature, especially for studying the transient steps during the O–O bond formation, requires the development of new methodologies. In this paper we report room temperature X-ray diffraction data of PS II microcrystals obtained using ultrashort (< 50 fs) 9 keV X-ray pulses from a hard X-ray free electron laser, namely the Linac Coherent Light Source. The results presented here demonstrate that the ”probe before destroy” approach using an X-ray free electron laser works even for the highly-sensitive Mn4CaO5 cluster in PS II at room temperature. We show that these data are comparable to those obtained in synchrotron radiation studies as seen by the similarities in the overall structure of the helices, the protein subunits and the location of the various cofactors. This work is, therefore, an important step toward future studies for resolving the structure of the Mn4CaO5 cluster without any damage at room temperature, and of the reaction intermediates of PS II during O–O bond formation. PMID:22665786

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

CERN Document Server

MacEvoy, B; Hall, G; Moscatelli, F; Passeri, D; Santocchia, A

2002-01-01

Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase in the bias required to deplete the detector and hence achieve efficient charge collection. We have previously presented a model of interdefect charge exchange between closely spaced centers in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall (SRH) mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. There is currently much interest in the subject of cryogenic detector operation as a means of improving radiation hardness. Our motivation, however, is primarily to investigate our model further by testing its predictions over a range of temperatures. We present measurements of spectra from /sup 241/Am alpha par...

Detector for atomic particles and ionizing radiations

International Nuclear Information System (INIS)

Mallet, Georges; Ythier, Christian.

1976-01-01

The aim of this invention is to provide improved detectors of atomic particles and of ionising radiations, having maximum sensitivity, by virtually suppressing all absorption of the radiation scattered by the main detector, so that these detectors are particularly suitable for fitting to anti-Compton spectrometers. Reference is particularly made to detectors of the Ge(Li) type, lithium compensated germanium, which are the most used. It is however made clear that this choice is not restrictive and that this invention not only applies to all known types of detectors and particularly to scintillator detectors, for instance to detectors such as NaI (Tl), composed of a monocrystal of a thallium activated alkaline halogenide, but also to gas, ionisation chamber and luminescent chamber type detectors and in general to all the known devices that convert the energy of particles into electric signals. Owing to the fact that the walls of the enclosure containing the main detector are composed, in the part around this detector, of an auxiliary detector, the latter detects virtually all the radiations scattered by the main detector. It does so without any loss due to the absorption of these radiations (a) by the metal walls of the enclosure usually containing the main detector and (b) by the walls of the auxiliary detector casing. It results from this that the detectors of the invention enable coincidence or anti-coincidence spectrometers with a very high performance to be made [fr

SiC-based neutron detector in quasi-realistic working conditions: efficiency and stability at room and high temperature under fast neutron irradiations

Energy Technology Data Exchange (ETDEWEB)

Ferone, Raffaello; Issa, Fatima; Ottaviani, Laurent; Biondo, Stephane; Vervisch, Vanessa [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231,13397 Marseille Cedex 20, (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344, (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol, (Belgium); Saenger, Richard [Schlumberger, Clamart, (France); Lyoussi, Abadallah [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance, (France)

2015-07-01

In the framework of the European I SMART project, we have designed and made new SiC-based nuclear radiation detectors able to operate in harsh environments and to detect both fast and thermal neutrons. In this paper, we report experimental results of fast neutron irradiation campaign at high temperature (106 deg. C) in quasi-realistic working conditions. Our device does not suffer from high temperature, and spectra do show strong stability, preserving features. These experiments, as well as others in progress, show the I SMART SiC-based device skills to operate in harsh environments, whereas other materials would strongly suffer from degradation. Work is still demanded to test our device at higher temperatures and to enhance efficiency in order to make our device fully exploitable from an industrial point of view. (authors)

Silicon radiation detector

International Nuclear Information System (INIS)

Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

1992-01-01

The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

Radiation damage effect on avalanche photodiodes

CERN Document Server

Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

1999-01-01

Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

Development of leak detector by radiation. 2

International Nuclear Information System (INIS)

Suzuki, Takashi; Okano, Yasuhiro; Chisaka, Haruo

1997-01-01

Leak detector by radiation has been developed by cooperative research between Water Authority and us. In his fiscal year, the most suitable arrangement of detector system was simulated by Monte Carlo method. The first, the experimental values were compared with the results of simulation. The second, calculation was carried out by changing the quality of reflective materials and distance between radiation source and detector. The simulation results were agreed with the experimental results. On the basis of the rate of presence of leak, the most suitable arrangement of detector system was obtained under the conditions that both radiation source and detector covered with graphite or iron of 5 cm thickness and separated each other 3 cm apart. However, by comparing FOM (figure of merit), the suitable arrangement was that radiation source and detector adjoined each other and covered by graphite or iron of 20 cm thickness. (S.Y.)

Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

International Nuclear Information System (INIS)

Gayduchenko, I.; Kardakova, A.; Voronov, B.; Finkel, M.; Fedorov, G.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.

2015-01-01

Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Building blocks for future detectors: Silicon test masses and 1550 nm laser light

International Nuclear Information System (INIS)

Schnabel, R; Britzger, M; Burmeister, O; Danzmann, K; Duck, J; Eberle, T; Friedrich, D; Luck, H; Mehmet, M; Steinlechner, S; Willke, B; Brueckner, F; Nawrodt, R

2010-01-01

Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection.

Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

Energy Technology Data Exchange (ETDEWEB)

Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

2015-07-01

In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

Operation of Silicon, Diamond and liquid Helium Detectors in the range of Room Temperature to 1.9 K and after an Irradiation Dose of several Mega Gray

CERN Document Server

Kurfuerst, C; Dehning, B; Eisel, T; Sapinski, M; Eremin, V

2013-01-01

At the triplet magnets, close to the interaction regions of the Large Hadron Collider (LHC), the current Beam Loss Monitoring (BLM) system is sensitive to the debris from the collision points. For future beams, with higher energy and intensity the expected increase in luminosity implicate an increase of the debris from interaction products covering the quench-provoking beam losses from the primary proton beams. The investigated option is to locate the detectors as close as possible to the superconducting coil, where the signal ratio of both is optimal. Therefore the detectors have to be located inside the cold mass of the superconducting magnets in superfluid helium at 1.9 Kelvin. Past measurements have shown that a liquid helium ionisation chamber, diamond and silicon detectors are promising candidates for cryogenic beam loss monitors. The carrier parameter, drift velocity, and the leakage current changes will be shown as a function of temperature. New high irradiation test beam measurements at room temperat...

Room temperature creep in metals and alloys

Energy Technology Data Exchange (ETDEWEB)

Deibler, Lisa Anne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials Characterization and Performance

2014-09-01

Time dependent deformation in the form of creep and stress relaxation is not often considered a factor when designing structural alloy parts for use at room temperature. However, creep and stress relaxation do occur at room temperature (0.09-0.21 T_m for alloys in this report) in structural alloys. This report will summarize the available literature on room temperature creep, present creep data collected on various structural alloys, and finally compare the acquired data to equations used in the literature to model creep behavior. Based on evidence from the literature and fitting of various equations, the mechanism which causes room temperature creep is found to include dislocation generation as well as exhaustion.

Seismic restraint means for radiation detector

International Nuclear Information System (INIS)

Underwood, R.H.; Todt, W.H.

1983-01-01

Seismic restraint means are provided for mounting an elongated, generally cylindrical nuclear radiation detector within a tubular thimble in a nuclear reactor monitor system. The restraint means permits longitudinal movement of the radiation detector into and out of the thimble. Each restraint means comprises a split clamp ring and a plurality of symmetrically spaced support arms pivotally mounted on the clamp ring. Each support arm has spring bias means and thimble contact means eg insulating rollers whereby the contact means engage the thimble with a constant predetermined force which minimizes seismic vibration action on the radiation detector. (author)

Notification determining technical standards concerning prevention of radiation injuries by electron capture detectors for gas chromatography

International Nuclear Information System (INIS)

1981-01-01

This rule is established under the provisions of the law on the prevention of radiation injuries by radioisotopes, the ordinance and the regulation for the execution of the law. This rule is applied to electron capture detectors for gas chromatography under the law. Basic terms are defined, such as detector radiation source, detector container and carrier gas. The detectors shall consist of detector radiation sources and containers, and the containers must be such that the radiation sources can not be easily taken away and never cause the danger to fall off. The induction and discharge mouths of the detector containers shall be shut tightly with caps, etc. The main structures and radiation sources of detectors shall be made of materials, which are difficult to corrode, and do not melt and easily cause chemical change below 800 deg. C. Detector radiation sources shall be made of metals plated with nickel 63 less than 20 milli-curie. The radiation dose rate on the surface of a detector shall be shielded to less than 0.06 milli-rem an hour. The temperature of detectors and carrier gas shall not exceed 350 deg. C. Corrosive gas shall not be used as carrier gas. The period of effective indication is 5 years. The method of washing, and the conditions of leak, heat-resistance and shock-resistance examinations are defined, respectively. (Okada, K.)

Simulation of a room for neutron instrument calibration at LCR/UERJ

International Nuclear Information System (INIS)

Medeiros, M.P.C.; Estrada, J.J.S.; Gomes, R.G.; Santos, R.F.G.; Leite, S.P.; Alves, C.F.E.; Rebello, W.F.; Almeida, C.E. de

2013-01-01

In this work the MCNPX code was used to design a calibrating room for neutron detectors to be implemented in the Laboratorio de Ciencias Radiologicas of UERJ. The calibration room containing a neutron irradiator with a 241 Am-Be source, a linear positioning system, radiation detectors and a shadow cone was modeled. The ambient dose equivalent rate, ııı ∗ ı10ı, in adjacent to the calibration room areas, as well as neutron scattering caused by the room itself were calculated. Using an occupancy factor of 1/16 for all adjacent areas, 3.8 cm of 5% borated polyethylene or 5.5 cm of concrete for shielding is enough to satisfy radiation safety requirements. (author)

Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

2018-02-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

Design of an ionization diffusion chamber detector

International Nuclear Information System (INIS)

Sugiarto, S.

1976-01-01

Prototype of an Ionization Diffusion Chamber detector has been made. It is a silindrical glass, 20 cm in diameter, 13,5 cm in height, air gas filled, operated at room pressure and room temperature at the top of this instrument while for the box temperature dry ice (CO 2 solid) temperature is used. This detector is ready for seeing alpha and beta particle tracks. (author)

Particle identification via transition radiation and detectors

International Nuclear Information System (INIS)

Egorytchev, V.; Saveliev, V.; Aplin, S.J.

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high-energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions - neutrino experiments (NOMAD), and ideal condition for the use of transition radiation detectors in flying and space high-energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high-energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results

Particle identification via transition radiation and detectors

CERN Document Server

Egorytchev, V; Aplin, S J

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high- energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions-neutrino experiments (NOMAD), and the ideal condition for the use of transition radiation detectors in flying and space high- energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high- energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results. (12 refs).

Study of dielectric liquids at room temperature for high energy x ray Tomography

International Nuclear Information System (INIS)

Lepert, S.

1989-09-01

The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

Room-temperature antiferromagnetic memory resistor.

Science.gov (United States)

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Precision synchrotron radiation detectors

International Nuclear Information System (INIS)

Levi, M.; Rouse, F.; Butler, J.

1989-03-01

Precision detectors to measure synchrotron radiation beam positions have been designed and installed as part of beam energy spectrometers at the Stanford Linear Collider (SLC). The distance between pairs of synchrotron radiation beams is measured absolutely to better than 28 /mu/m on a pulse-to-pulse basis. This contributes less than 5 MeV to the error in the measurement of SLC beam energies (approximately 50 GeV). A system of high-resolution video cameras viewing precisely-aligned fiducial wire arrays overlaying phosphorescent screens has achieved this accuracy. Also, detectors of synchrotron radiation using the charge developed by the ejection of Compton-recoil electrons from an array of fine wires are being developed. 4 refs., 5 figs., 1 tab

Solid state detectors for neutron radiation monitoring in fusion facilities

International Nuclear Information System (INIS)

Gómez-Ros, J.M.

2014-01-01

The purpose of this communication is to summarize the main solid state based detectors proposed for neutron diagnostic in fusion applications and their applicability under the required harsh conditions in terms of intense radiation, high temperature and available space restrictions. Activation systems, semiconductor based detectors, luminescent materials and Cerenkov fibre optics sensors (C-FOS) are the main devices that are described. - Highlights: • A state-of-the-art summary of solid state based detectors are described. • Conditions and restrictions for their applicability are described. • A list of the 38 more relevant references has been included

Radiation detector. [100 A

Energy Technology Data Exchange (ETDEWEB)

Baker, P D; Hollands, D V

1975-12-04

A radiation detector is described in which the radiation is led to a sensor via a 100 A thick gold film filter, which reduces the infrared components of the irradiation to a greater extent than the ultra-violet component reaching the sensor.

Fabrication of radiation detectors with HgI2 crystals grown from a solution

International Nuclear Information System (INIS)

Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

1979-01-01

Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

Electromagnetic radiation detector

Science.gov (United States)

Benson, Jay L.; Hansen, Gordon J.

1976-01-01

An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

Recent developments in radiation detectors and instruments

International Nuclear Information System (INIS)

Das, Debashis

2016-01-01

Radiation detector is the key component in precise and accurate measurement of the nuclear radiations. The detectors deployed for radiation measurements in broadly classified sectors of Energy, Security, Discovery Science and Health and Environments are in general specific to their applications. The nuclear reactors as well as the fuel processing including waste management in energy sector require wide range/variety of detectors and the instruments for safe and precise generation of power. The security sector has gained importance in radiation monitoring in the present security perspective and there are many challenges in development of detector technology. The Discovery Science or the mega science projects viz CERN, Fermilab, GANIL, INO, MACE telescope, ITER etc have continuously generated new demand on detector related technologies that have been also found to be useful in other applications. Similarly, the health and environment monitoring have been also evolving with new technologies and techniques to address the requirement's arising in projects of new nuclear programs

Radiation detectors for reactors

International Nuclear Information System (INIS)

Balagi, V.

2005-01-01

Detection and measurement of radiation plays a vital role in nuclear reactors from the point of view of control and safety, personnel protection and process control applications. Various types of radiation are measured over a wide range of intensity. Consequently a variety of detectors find use in nuclear reactors. Some of these devices have been developed in Electronics Division. They include gas-filled detectors such as 10 B-lined proportional counters and chambers, fission detectors and BF 3 counters are used for the measurement of neutron flux both for reactor control and safety, process control as well as health physics instrumentation. In-core neutron flux instrumentation employs the use detectors such as miniature fission detectors and self-powered detectors. In this development effort, several indigenous materials, technologies and innovations have been employed to suit the specific requirement of nuclear reactor applications. This has particular significance in view of the fact that several new types of reactors such as P-4, PWR and AHWR critical facilities, FBTR, PFBR as well as the refurbishment of old units like CIRUS are being developed. The development work has sought to overcome some difficulties associated with the non-availability of isotopically enriched neutron-sensing materials, achieving all-welded construction etc. The present paper describes some of these innovations and performance results. (author)

Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

International Nuclear Information System (INIS)

Prasad, D N; Ayyappan, R; Kamble, L P; Singh, J P; Muralikrishna, L V; Alex, M; Balagi, V; Mukhopadhyay, P K

2008-01-01

Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm 2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ∼1 x 10 -5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mmx160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face and diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6x10 -9 m bar ltr/sec in vacuum mode and 2x10 -7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5x10 -5 mbar, the new valve achieved vacuum 7.4x10 -6 mbar in the same time under the same conditions

Self-powered radiation detectors

International Nuclear Information System (INIS)

Gillies, Wallace.

1980-01-01

This invention aims to create a self fed radiation detector comprising a long central emitter-conductor absorbing the neutrons, wrapped in an insulating material, and a thin collector-conductor placed coaxially around the emitter and the insulation, the emitter being constructed of several stranded cables in a given conducting material so that the detector is flexible enough [fr

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Calculation of Vertical Temperature Gradients in Heated Rooms

DEFF Research Database (Denmark)

Overby, H.; Steen-Thøde, Mogens

This paper deals with a simple model which predicts the vertical temperature gradient in a heated room. The gradient is calculated from a dimensionless temperature profile which is determined by two room air temperatures only, the mean temperature in the occupied zone and the mean temperature...

Photodiodes utilization as ionizing radiation detectors

International Nuclear Information System (INIS)

Khoury, H.J.; Melo, F.A. de

1987-01-01

The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

Radiation detector system having heat pipe based cooling

Science.gov (United States)

Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

2006-10-31

A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

CVD diamond detectors for ionizing radiation

Science.gov (United States)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Neutron spectrometry by diamond detector for nuclear radiation

International Nuclear Information System (INIS)

Kozlov, S.F.; Konorova, E.A.; Barinov, A.L.; Jarkov, V.P.

1975-01-01

Experiments on fast neutron spectrometry using the nuclear radiation diamond detector inside a horizontal channel of a water-cooled and water-moderated reactor are described. It is shown that the diamond detector enables neutron spectra to be measured within the energy range of 0.3 to 10 MeV against reactor gamma-radiation background and has radiation resistance higher than that of conventional semiconductor detectors. (U.S.)

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

International Nuclear Information System (INIS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-01-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

Study of detectors in beta radiation fields

International Nuclear Information System (INIS)

Albuquerque, M. da P.P.; Xavier, M.; Caldas, L.V.E.

1987-01-01

Several commercial detectors used with gamma or X radiation are studied. Their sensibility and energetic dependence are analysed in exposures of beta radiation fields. A comparative evaluation with the reference detector (the extrapolation chamber) is presented. (M.A.C.) [pt

Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Dezillie, B.; Li, Z.; Collins, P.; Niinikoski, T.O.; Lourenco, C.; Sonderegger, P.; Borchi, E.; Bruzzi, M.; Pirollo, S.; Granata, V.; Pagano, S.; Chapuy, S.; Dimcovski, Z.; Grigoriev, E.; Bell, W.; Devine, S.R.H.; O'Shea, V.; Smith, K.; Berglund, P.; Boer, W. de; Hauler, F.; Heising, S.; Jungermann, L.; Casagrande, L.; Cindro, V.; Mikuz, M.; Zavartanik, M.; Via, C. da; Esposito, A.; Konorov, I.; Paul, S.; Schmitt, L.; Buontempo, S.; D'Ambrosio, N.; Pagano, S.; Ruggiero, G.; Eremin, V.; Verbitskaya, E.

2000-01-01

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2x10 15 n/cm 2 yields a MIP signal of at least 15000 e - both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The 'Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied

Ultrasonic acoustic levitation for fast frame rate X-ray protein crystallography at room temperature

OpenAIRE

Soichiro Tsujino; Takashi Tomizaki

2016-01-01

Increasing the data acquisition rate of X-ray diffraction images for macromolecular crystals at room temperature at synchrotrons has the potential to significantly accelerate both structural analysis of biomolecules and structure-based drug developments. Using lysozyme model crystals, we demonstrated the rapid acquisition of X-ray diffraction datasets by combining a high frame rate pixel array detector with ultrasonic acoustic levitation of protein crystals in liquid droplets. The rapid spinn...

Correlation of point defects in CdZnTe with charge transport:application to room-temperature x-ray and gamma-ray. Final Technical Report

International Nuclear Information System (INIS)

Giles, Nancy C.

2003-01-01

The primary goal of this project has been to characterize and identify point defects in CdZnTe. There are two experimental focus areas: (1) photoluminescence and EPR. Results are compared with radiation detector performance. Applications requiring room-temperature x-ray and gamma-ray detectors are rapidly increasing and now include nuclear medicine, space sciences, national security, environmental remediation, nonproliferation inspections, etc. To meet these needs, a new generation of detectors based on single crystals of cadmium zinc telluride (Cd 1-x Zn x Te) is being developed. This semiconductor material possesses many desirable detector properties, such as constituent atoms with high atomic number (Z), a sufficiently large band gap to minimize leakage currents at room temperature, and high intrinsic mobility-lifetime (p) products for electrons and holes. However, despite the tremendous promise of this material, problems clearly exist. CdZnTe crystals are difficult to grow in large sizes and with ultra-high purity. There is a need to further lower the leakage currents in detector-grade material and also to increase the efficiency of charge collection. In general, all aspects of carrier trapping in this material must be understood and minimized. Point defects are a primary reason CdZnTe crystals have not yet reached their expected levels of performance. Thus, a better understanding of the role of point defects and the larger microstructure defects on the transport of electrons and holes will lead to improved detector-grade CdZnTe. The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτ products. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence

Photon antibunching in single-walled carbon nanotubes at telecommunication wavelengths and room temperature

Energy Technology Data Exchange (ETDEWEB)

Endo, Takumi, E-mail: endou@az.appi.keio.ac.jp; Ishi-Hayase, Junko; Maki, Hideyuki, E-mail: maki@appi.keio.ac.jp [Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522 (Japan)

2015-03-16

We investigated the photoluminescence of individual air-suspended single-walled carbon nanotubes (SWNTs) from 6 to 300 K. Time-resolved and antibunching measurements over the telecommunication wavelength range were performed using a superconducting single-photon detector. We detected moderate temperature independent antibunching behavior over the whole temperature range studied. To investigate the exciton dynamics, which is responsible for the antibunching behavior, we measured excitation-power and temperature dependence of the photoluminescence spectra and lifetime decay curves. These measurements suggested an exciton confinement effect that is likely caused by high-dielectric amorphous carbon surrounding the SWNTs. These results indicate that SWNTs are good candidates for light sources in quantum communication technologies operating in the telecommunication wavelength range and at room temperature.

High Momentum Particle Identification Detector The Study of Cesium Iodide Quantum Efficiency Dependency on Substrate Material, Temperature and Quartz Window

CERN Document Server

Wisna, Gde Bimananda M

2014-01-01

The Cesium Iodide (CsI) is used as a material for detecting Cherenkov radiation produced by high momentum particle in High Momentum Particle Identification Detector (HMPID) at ALICE Experiment at CERN. This work provides investigation and analysis of The Quantum Efficiency (QE) result of CsI which is deposited on five samples substrates such as copper passivated red, copper passivated yellow, aluminium, copper coated with nickel and copper coated with nickel then coated with gold. The measurement of five samples is held under temperature $60^{0}$ C and $25^{0}$ C (room temperature) and also with optical quartz window which can be adjusted to limit the wavelength range which reach the CsI. The result shows there are dependency of substrate, temperature due to enhancement effect and also quartz windows usage on QE of CsI. The results of five samples is then compared and analyzed.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

Radiation effects on light sources and detectors

International Nuclear Information System (INIS)

Barnes, C.E.

1985-01-01

The rapidly expanding field of optoelectronics includes a wide variety of both military and non-military applications in which the systems must meet radiation exposure requirements. Herein, we review the work on radiation effects on sources and detectors for such optoelectronic systems. For sources the principal problem is permanent damage-induced light output degradation, while for detectors it is ionizing radiation-induced photocurrents

Detectors for Particle Radiation

Science.gov (United States)

Kleinknecht, Konrad

1999-01-01

This textbook provides a clear, concise and comprehensive review of the physical principles behind the devices used to detect charged particles and gamma rays, and the construction and performance of these many different types of detectors. Detectors for high-energy particles and radiation are used in many areas of science, especially particle physics and nuclear physics experiments, nuclear medicine, cosmic ray measurements, space sciences and geological exploration. This second edition includes all the latest developments in detector technology, including several new chapters covering micro-strip gas chambers, silicion strip detectors and CCDs, scintillating fibers, shower detectors using noble liquid gases, and compensating calorimeters for hadronic showers. This well-illustrated textbook contains examples from the many areas in science in which these detectors are used. It provides both a coursebook for students in physics, and a useful introduction for researchers in other fields.

Tunable, Room Temperature THZ Emitters Based on Nonlinear Photonics

Science.gov (United States)

Sinha, Raju

The Terahertz (1012 Hz) region of the electromagnetic spectrum covers the frequency range from roughly 300 GHz to 10 THz, which is in between the microwave and infrared regimes. The increasing interest in the development of ultra-compact, tunable room temperature Terahertz (THz) emitters with wide-range tunability has stimulated in-depth studies of different mechanisms of THz generation in the past decade due to its various potential applications such as biomedical diagnosis, security screening, chemical identification, life sciences and very high speed wireless communication. Despite the tremendous research and development efforts, all the available state-of-the-art THz emitters suffer from either being large, complex and costly, or operating at low temperatures, lacking tunability, having a very short spectral range and a low output power. Hence, the major objective of this research was to develop simple, inexpensive, compact, room temperature THz sources with wide-range tunability. We investigated THz radiation in a hybrid optical and THz micro-ring resonators system. For the first time, we were able to satisfy the DFG phase matching condition for the above-mentioned THz range in one single device geometry by employing a modal phase matching technique and using two separately designed resonators capable of oscillating at input optical waves and generated THz waves. In chapter 6, we proposed a novel plasmonic antenna geometry – the dimer rod-tapered antenna (DRTA), where we created a hot-spot in the nanogap between the dimer arms with a very large intensity enhancement of 4.1x105 at optical resonant wavelength. Then, we investigated DFG operation in the antenna geometry by incorporating a nonlinear nanodot in the hot-spot of the antenna and achieved continuously tunable enhanced THz radiation across 0.5-10 THz range. In chapter 8, we designed a multi-metallic resonators providing an ultrasharp toroidal response at THz frequency, then fabricated and

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

CVD diamond detectors for ionizing radiation

CERN Document Server

Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

CVD diamond detectors for ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

International Nuclear Information System (INIS)

Breitenhuber, L.; Kindl, P.; Obenaus, B.

1992-12-01

Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

Department of Radiation Detectors - Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1997-01-01

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

Department of Radiation Detectors - Overview

Energy Technology Data Exchange (ETDEWEB)

Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

1997-12-31

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

Innovative mid-infrared detector concepts

Science.gov (United States)

Höfling, Sven; Pfenning, Andreas; Weih, Robert; Ratajczak, Albert; Hartmann, Fabian; Knebl, Georg; Kamp, Martin; Worschech, Lukas

2016-09-01

Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, rotational-vibrational absorption bands within the mid infrared (MIR) spectral region are exploited and probed with appropriate light sources. During the past years, the development of novel laser concepts such as interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) has driven a continuous optimization of MIR laser sources. On the other hand side, there has been relatively little progress on detectors in this wavelength range. Here, we study two novel and promising GaSb-based detector concepts: Interband cascade detectors (ICD) and resonant tunneling diode (RTD) photodetectors. ICDs are a promising approach towards highly sensitive room temperature detection of MIR radiation. They make use of the cascading scheme that is enabled by the broken gap alignment of the two binaries GaSb and InAs. The interband transition in GaSb/InAs-superlattices (SL) allows for normal incidence detection. The cut-off wavelength, which determines the low energy detection limit, can be engineered via the SL period. RTD photodetectors act as low noise and high speed amplifiers of small optically generated electrical signals. In contrast to avalanche photodiodes, where the gain originates from multiplication due to impact ionization, in RTD photodetectors a large tunneling current is modulated via Coulomb interaction by the presence of photogenerated minority charge carriers. For both detector concepts, first devices operational at room temperature have been realized.

Advances in the project about Pin type silicon radiation detectors; Avances en el proyecto sobre detectores de radiacion de silicio tipo PIN

Energy Technology Data Exchange (ETDEWEB)

Ramirez F, J. [Instituto Nacional de Investigaciones Nucleares, Laboratorio de Detectores de Radiacion, A.P. 18-1027, 11801 Mexico D.F. (Mexico); Cerdeira, A.; Aceves, M.; Diaz, A.; Estrada, M.; Rosales, P.; Cabal, A.E.; Montano L, M.; Leyva, A

1998-07-01

The obtained advances in the collaboration project ININ-CINVESTAV about development of Pin type semiconductor radiation detectors here are presented. It has been characterized the response to different types of radiation made in CINVESTAV and INAOE. Measurements have been realized with different types of sensitive to charge preamplifiers determining the main characteristics which must be executed to be able to be employed with low capacitance detectors. As applications it has been possible to measure the irradiation time in a mammography machine and X-ray energy spectra have been obtained in the order of 14 KeV, with 4 KeV at ambient temperature. The future actions of project have been indicated and the possible applications of these detectors. (Author)

Effects of ionizing radiation on cryogenic infrared detectors

Science.gov (United States)

Moseley, S. H.; Silverberg, R. F.; Lakew, B.

1989-01-01

The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

General gamma-radiation test of TGC detectors

CERN Document Server

Smakhtin, V P

2004-01-01

The TGC detectors are expected to provide the Muon trigger for the ATLAS detector in the forward region of the ATLAS Muon Spectrometer. The TGC detectors have to provide a trigger signal within 25 ns of the LHC accelerator bunch spacing, with an efficiency exceeding 95%, while exposed to an effective)photon and neutron background ranging from 30 to 150 Hz/cm/sup 2/. In order to test TGC detectors in high rate environment every detector was irradiated at 2500 Cu Co-60 source in Radiation Facility of Weizmann Institute of Science at nominal operating voltage and at photon rate several times above the expected background. This radiation test was succeeded in diagnostics of the hot spots inside detectors. The present publication refers to the test results of 800 TGC detectors produced in the Weizmann Institute of Science. (1 refs).

Room temperature particle detectors based on indium phosphide

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan; Žďánský, Karel; Pekárek, Ladislav

2010-01-01

Roč. 612, č. 2 (2010), s. 334-337 ISSN 0168-9002 R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Particle detector * Semi-insulating InP * High purity InP layers Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.142, year: 2010

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

Method and circuit for stabilizing conversion gain of radiation detectors of a radiation detection system

International Nuclear Information System (INIS)

Stoub, E.W.

1986-01-01

A method is described for calibrating the gain of an array of radiation detectors of a radiation detection system comprising the steps of: (a) measuring in parallel for each radiation detector using a predetermined calibration point the energy map status, thereby obtaining an energy response vector whose elements correspond to the individual output of each radiation detector, each predetermined calibration point being a prescribed location corresponding to one of the radiation detectors; (b) multiplying that energy response vector with a predetermined deconvolution matrix, the deconvolution matrix being the inversion of a contribution matrix containing matrix elements C/sub IJ/, each such matrix element C/sub IJ/ of the contribution matrix representing the relative contribution level of a radiation detector j of the detection system for a point radiation source placed at a location i, thereby obtaining a gain vector product for the radiation detectors; (c) adjusting the gains of the radiation detectors with respect to the gain vector product such that a unity gain vector is essentially obtained; (d) measuring again the energy map status according to step (a); and (e) if the energy map status fails to essentially produce a unity gain vector repeat steps (a) to (d) until the energy map status substantially corresponds to unity

Radiation detectors as surveillance monitors

International Nuclear Information System (INIS)

Fehlau, P.E.; Dowdy, E.J.

1981-01-01

The International Atomic Energy Agency (IAEA) proposes to use personnel dosimetry radiation detectors as surveillance monitors for safeguards purposes. It plans to place these YES/NO monitors at barrier penetration points declared closed under IAEA safeguards to detect the passage of plutonium-bearing nuclear material, usually spent fuel. For this application, commercially available dosimeters were surveyed as well as other radiation detectors that appeared suitable and likely to be marketed in the near future. No primary advantage was found in a particular detector type because in this application backgrounds vary during long counting intervals. Secondary considerations specify that the monitor be inexpensive and easy to tamper-proof, interrogate, and maintain. On this basis radiophotoluminescent, thermoluminescent, and electronic dosimeters were selected as possible routine monitors; the latter two may prove useful for data-base acquisition

Spin-on nanostructured silicon-silica film displaying room-temperature nanosecond lifetime photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Cohen, Y.; Hatton, B.; Miguez, H.; Coombs, N.; Fournier-Bidoz, S.; Ozin, G.A. [Materials Chemistry Research Group, Department of Chemistry, Lash Miller Chemical Laboratories, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6 (Canada); Grey, J.K.; Beaulac, R.; Reber, C. [Department of Chemistry, University of Montreal, Montreal, Quebec H3C 3J7 (Canada)

2003-04-17

A yellow transparent mesoporous silica film has been achieved by the incorporation of silicon nanoclusters into its channels. The resulting nanocomposite - fabricated using a combination of evaporation induced self- assembly and chemical vapor deposition - emits light brightly at visible wavelengths and has nanosecond radiative lifetimes at room temperature when excited by ultraviolet light (see Figure). (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Clean industrial room for drift tube assembling

International Nuclear Information System (INIS)

Glonti, G.L.; Gongadze, A.L.; Evtukhovich, P.G.

2001-01-01

Description of a clean industrial room for assembly of drift tubes for the muon spectrometer of the ATLAS experiment is presented. High quality specifications on the detectors to be produced demanded creation of a workplace with stable temperature and humidity, as well as minimum quantity of dust in the room. Checking of parameters of intra-room air during long period of continuous work has confirmed correctness of the designed characteristics of the climatic system installed in the clean room. The room large volume (∼ 190 m 3 ), the powerful and flexible climatic system, and simplicity of service allow assembling of detectors with length up to 5 m. Subsequent checking of functionality of the assembled detectors has shown high quality of assembling (the amount of rejected tubes does not exceed 2%). It demonstrates conformity to the assembling quality requirements for mass production of drift chambers for the muon spectrometer. (author)

Clean Industrial Room for Drift Tube Assembling

CERN Document Server

Glonti, GL; Evtoukhovitch, P G; Kroa, G; Manz, A; Potrap, I N; Rihter, P; Stoletov, G D; Tskhadadze, E G; Chepurnov, V F; Chirkov, A V; Shelkov, G A

2001-01-01

Description of a clean industrial room for assembly of drift tubes for the muon spectrometer of the ATLAS experiment is presented. High quality specifications on the detectors to be produced demanded creation of a workplace with stable temperature and humidity, as well as minimum quantity of dust in the room. Checking of parameters of intra-room air during long period of continuous work has been confirmed correctness of the designed characteristics of the climatic system installed in the clean room. The room large volum (\\sim 190 m^3), the powerful and flexible climatic system, and simplicity of service allow assembling of detectors with length up to 5 m. Subsequent checking of functionality of the assembled detectors has shown high quality of assembling (the amount of rejected tubes does not exceed 2 %). It demonstrates conformity to the assembling quality requirements for mass production of drift chambers for the muon spectrometer.

Study on response function of CdTe detector

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

2009-10-21

So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

PRD3000: A novel Personnel Radiation Detector with Radiation Exposure Monitoring

International Nuclear Information System (INIS)

Fallu-Labruyere, A.; Micou, C.; Schulcz, F.; Fellinger, J.

2015-01-01

PRD3000 TM is a novel Personal Radiation Detector (PRD) with personnel radiation dose exposure monitoring. It is intended for First Responders, Law Enforcement, Customs Inspectors protecting critical infrastructures for detecting unexpected radioactive sources, who also need real time Hp(10) dose equivalent information. Traditional PRD devices use scintillator materials instrumented through either a photomultiplier tube or a photodiode photodetector. While the former is bulky and sensitive to magnetic fields, the latter has to compromise radiation sensitivity and energy threshold given its current noise per unit of photo-detection surface. Recently, solid state photodetectors (SiPM), based on arrays of Geiger operated diodes, have emerged as a scalable digital photodetector for photon counting. Their strong breakdown voltage temperature dependence (on the order of tens of milli-volts per K) has however limited their use for portable instruments where strong temperature gradients can be experienced, and limited power is available to temperature stabilize. The PRD3000 is based on the industry standard DMC3000 active dosimeter that complies with IEC 61526 Ed. 3 and ANSI 42.20 for direct reading personal dose equivalent meters and active personnel radiation monitors. An extension module is based on a CsI(Tl) scintillator readout by a temperature compensated SiPM. Preliminary nuclear tests combined with a measured continuous operation in excess of 240 hours from a single AAA battery cell indicate that the PRD3000 complies with the IEC 62401 Ed.2 and ANSI 42.32 without sacrificing battery life time. We present a summary of the device test results, starting with performance stability over a temperature range of - 20 deg. C to 50 deg. C, false alarm rates and dynamic response time. (authors)

PRD3000: A novel Personnel Radiation Detector with Radiation Exposure Monitoring

Energy Technology Data Exchange (ETDEWEB)

Fallu-Labruyere, A.; Micou, C.; Schulcz, F.; Fellinger, J. [Mirion Technologies - MGPI SA (France)

2015-07-01

PRD3000{sup TM} is a novel Personal Radiation Detector (PRD) with personnel radiation dose exposure monitoring. It is intended for First Responders, Law Enforcement, Customs Inspectors protecting critical infrastructures for detecting unexpected radioactive sources, who also need real time Hp(10) dose equivalent information. Traditional PRD devices use scintillator materials instrumented through either a photomultiplier tube or a photodiode photodetector. While the former is bulky and sensitive to magnetic fields, the latter has to compromise radiation sensitivity and energy threshold given its current noise per unit of photo-detection surface. Recently, solid state photodetectors (SiPM), based on arrays of Geiger operated diodes, have emerged as a scalable digital photodetector for photon counting. Their strong breakdown voltage temperature dependence (on the order of tens of milli-volts per K) has however limited their use for portable instruments where strong temperature gradients can be experienced, and limited power is available to temperature stabilize. The PRD3000 is based on the industry standard DMC3000 active dosimeter that complies with IEC 61526 Ed. 3 and ANSI 42.20 for direct reading personal dose equivalent meters and active personnel radiation monitors. An extension module is based on a CsI(Tl) scintillator readout by a temperature compensated SiPM. Preliminary nuclear tests combined with a measured continuous operation in excess of 240 hours from a single AAA battery cell indicate that the PRD3000 complies with the IEC 62401 Ed.2 and ANSI 42.32 without sacrificing battery life time. We present a summary of the device test results, starting with performance stability over a temperature range of - 20 deg. C to 50 deg. C, false alarm rates and dynamic response time. (authors)

Self-powered radiation detector

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1979-01-01

Self-powered gamma radiation detector composed of a conducting emitter surrounded by an insulating medium and a conducting tubular collector, the emitter being a hollow tube containing an electrical insulator [fr

Dose-dependent optically stimulated luminescence of synthetic quartz at room temperature

International Nuclear Information System (INIS)

Kale, Y.D.; Gandhi, Y.H.; Gartia, R.K.

2008-01-01

Physical conditions such as annealing temperature, duration of annealing, ionizing radiation, etc., play a significant role in the applications of optically stimulated luminescence (OSL) dating as well as OSL dosimetry. Many efforts are made to understand the effect of these physical parameters on quartz specimens owing to its use in such applications. Such factors induce changes in OSL decay pattern. The definite correlation between color centers and luminescence sensitivity can be established on account of such pre-treatments to the specimen. The purpose of present investigations is to study the effect of ionizing radiation under identical physical conditions on OSL properties measured at room temperature. The shapes of decay curve and dose-response data are considered for this purpose. This study can reveal the changes in color centers in response to the pre-conditions to the specimen. It was found that the OSL decay remains slow and OSL properties change systematically with the rise in beta dose up to a critical dose; however, it changes the pattern when the beta exposure to the specimen was increased higher than the critical dose. This critical dose was found to be different for different temperature of annealing. The shape of decay curve up to the critical dose was also studied by considering the difference of OSL intensities between two successive durations from the observed OSL decay data. The results are explained based on the changes in available shallow traps during OSL measurement at room temperature with changes in pre-conditions to the specimens. The results also have been confirmed with the corresponding changes in ESR signals

Differential Detector for Measuring Radiation Fields

International Nuclear Information System (INIS)

Broide, A.; Marcus, E.; Brandys, I.; Schwartz, A.; Wengrowicz, U.; Levinson, S.; Seif, R.; Sattinger, D.; Kadmon, Y.; Tal, N.

2004-01-01

In case of a nuclear accident, it is essential to determine the source of radioactive contamination in order to analyze the risk to the environment and to the population. The radiation source may be a radioactive plume on the air or an area on the ground contaminated with radionuclides. Most commercial radiation detectors measure only the radiation field intensity but are unable to differentiate between the radiation sources. Consequently, this limitation causes a real problem in analyzing the potential risk to the near-by environment, since there is no data concerning the contamination ratios in the air and on the ground and this prevents us from taking the required steps to deal with the radiation event. This work presents a GM-tube-based Differential Detector, which enables to determine the source of contamination

CZT Virtual Frisch-grid Detector: Principles and Applications

International Nuclear Information System (INIS)

Cui, Y.; Bolotnikov, A.; Camarda, G.; Hossain, A.; James, R.B.

2009-01-01

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for using as room-temperature semiconductor detectors, because it has a wide bandgap and a high atomic number. However, due to the material's poor hole mobility, several special techniques were developed to ensure its suitability for radiation detection. Among them, the virtual Frisch-grid CZT detector is an attractive option, having a simple configuration, yet delivering an outstanding spectral performance. The goal of our group in Brookhaven National Laboratory (BNL) is to improve the performance of Frisch-ring CZT detectors; most recently, that effort focused on the non-contacting Frisch-ring detector, allowing us to build an inexpensive, large-volume detector array with high energy-resolution and a large effective area. In this paper, the principles of virtual Frisch-grid detectors are described, especially BNL's innovative improvements. The potential applications of virtual Frisch-grid detectors are discussed, and as an example, a hand-held gamma-ray spectrometer using a CZT virtual Frischgrid detector array is introduced, which is a self-contained device with a radiation detector, readout circuit, communication circuit, and high-voltage supply. It has good energy resolution of 1.4% (FWHM of 662-keV peak) with a total detection volume of ∼20 cm 3 . Such a portable inexpensive device can be used widely in nonproliferation applications, non-destructive detection, radiation imaging, and for homeland security. Extended systems based on the same technology have potential applications in industrial- and nuclear-medical-imaging

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Lithium germanium detectors reactivation

International Nuclear Information System (INIS)

Nicolai, J.A.; Marti, G.V.; Riso, J.M.; Gimenez, C.R.

1981-01-01

A convenient method to regenerate the characteristics of damaged Ge(li) detectors, that has been applied in the authors' laboratory, is described. The procedure consists in warming-up the crystal in its cryostat to temperatures between 10 deg C and 30 deg C above room temperature, in order to clean its surface. Subsequent cooling down to liquid nitrogen temperature, followed by one or more clean-up drifting processes, are applied to the crystals. This paper summarizes the results obtained with several detectors; this method was applied successfully to 15 detectors more. (author) [es

Radiation-hardened optoelectronic components: detectors

International Nuclear Information System (INIS)

Wiczer, J.J.

1986-01-01

In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown that detectors can be made to function acceptably after exposures to neutron fluences of 10 15 n/cm 2 , total dose gamma exposures of 10 8 rad (Si), and flash x-ray environments of 10 8 rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results. 23 refs., 10 figs., 1 tab

Circuitry for use with an ionizing-radiation detector

International Nuclear Information System (INIS)

Marshall, J.H. III; Harrington, T.M.

1976-01-01

An improved system of circuitry for use in combination with an ionizing-radiation detector over a wide range of radiation levels includes a current-to-frequency converter together with a digital data processor for respectively producing and measuring a pulse repetition frequency which is proportional to the output current of the ionizing-radiation detector, a dc-to-dc converter for providing closely regulated operating voltages from a rechargeable battery and a bias supply for providing high voltage to the ionization chamber. The ionizing-radiation detector operating as a part of this system produces a signal responsive to the level of ionizing radiation in the vicinity of the detector, and this signal is converted into a pulse frequency which will vary in direct proportion to such level of ionizing-radiation. The data processor, by counting the number of pulses from the converter over a selected integration interval, provides a digital indication of radiation dose rate, and by accumulating the total of all such pulses provides a digital indication of total integrated dose. Ordinary frequency-to-voltage conversion devices or digital display techniques can be used as a means for providing audible and visible indications of dose and dose-rate levels

Nuclear radiation-warning detector that measures impedance

Science.gov (United States)

Savignac, Noel Felix; Gomez, Leo S; Yelton, William Graham; Robinson, Alex; Limmer, Steven

2013-06-04

This invention is a nuclear radiation-warning detector that measures impedance of silver-silver halide on an interdigitated electrode to detect light or radiation comprised of alpha particles, beta particles, gamma rays, X rays, and/or neutrons. The detector is comprised of an interdigitated electrode covered by a layer of silver halide. After exposure to alpha particles, beta particles, X rays, gamma rays, neutron radiation, or light, the silver halide is reduced to silver in the presence of a reducing solution. The change from the high electrical resistance (impedance) of silver halide to the low resistance of silver provides the radiation warning that detected radiation levels exceed a predetermined radiation dose threshold.

Neutron-activation determination of the rare earths in natural calcites using a semiconductor detector

International Nuclear Information System (INIS)

Vaganov, N.A.; Bulnaev, A.I.; Mejer, V.A.; Ponomarev, V.S.

1976-01-01

The application of germanium semiconducting detector is described. The detector has an energy resolution about 1 KeV and makes it possible to determine the content of Ce, Nd, Eu, Gd, Tb, and Yb in natural calcites with high sensitivity. The region of soft γ-radiation of activated calcites is more favourable for measurements to be performed than the region of hard γ-rays. Semiconducting detectors of radiation type are relatively cheap; they can be stored at room temperature. The limit of determining rare earth elements in calcites is (g): Eu-1.5.10 -9 ; Tb-4.0.10 -9 ; Yb-7.0.10 -9 ; Ce-1.0.10 -7 ; Nd-5.0.10 -7 ; Gd-1.0.10 -6 . A relative error of concentration determination is 10-20%

On the suitability of P Si-PIN detectors in transmission experiments

International Nuclear Information System (INIS)

Murty, V.R.K.; Devan, K.R.S.

2000-01-01

There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

ALICE Transition Radiation Detector (TRD), test beam.

CERN Multimedia

2003-01-01

Electrons and positrons can be discriminated from other charged particles using the emission of transition radiation - X-rays emitted when the particles cross many layers of thin materials. To develop such a Transition Radiation Detector(TRD) for ALICE many detector prototypes were tested in mixed beams of pions and electrons, as in the example shown here.

Flame detector operable in presence of proton radiation

Science.gov (United States)

Walker, D. J.; Turnage, J. E.; Linford, R. M. F.; Cornish, S. D. (Inventor)

1974-01-01

A detector of ultraviolet radiation for operation in a space vehicle which orbits through high intensity radiation areas is described. Two identical ultraviolet sensor tubes are mounted within a shield which limits to acceptable levels the amount of proton radiation reaching the sensor tubes. The shield has an opening which permits ultraviolet radiation to reach one of the sensing tubes. The shield keeps ultraviolet radiation from reaching the other sensor tube, designated the reference tube. The circuitry of the detector subtracts the output of the reference tube from the output of the sensing tube, and any portion of the output of the sensing tube which is due to proton radiation is offset by the output of the reference tube. A delay circuit in the detector prevents false alarms by keeping statistical variations in the proton radiation sensed by the two sensor tubes from developing an output signal.

Radiation effects in IRAS extrinsic infrared detectors

Science.gov (United States)

Varnell, L.; Langford, D. E.

1982-01-01

During the calibration and testing of the Infrared Astronomy Satellite (IRAS) focal plane, it was observed that the extrinsic photoconductor detectors were affected by gamma radiation at dose levels of the order of one rad. Since the flight environment will subject the focal plane to dose levels of this order from protons in single pass through the South Atlantic Anomaly, an extensive program of radiation tests was carried out to measure the radiation effects and to devise a method to counteract these effects. The effects observed after irradiation are increased responsivity, noise, and rate of spiking of the detectors after gamma-ray doses of less than 0.1 rad. The detectors can be returned almost to pre-irradiation performance by increasing the detector bias to breakdown and allowing a large current to flow for several minutes. No adverse effects on the detectors have been observed from this bias boost, and this technique will be used for IRAS with frequent calibration to ensure the accuracy of observations made with the instrument.

LL13-MatModelRadDetect-PD2Jf Final Report: Materials Modeling for High-Performance Radiation Detectors

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-12-11

The aims of this project are to enable rational materials design for select high-payoff challenges in radiation detection materials by using state-of-the-art predictive atomistic modeling techniques. Three specific high-impact challenges are addressed: (i) design and optimization of electrical contact stacks for TlBr detectors to stabilize temporal response at room-temperature; (ii) identification of chemical design principles of host glass materials for large-volume, low-cost, highperformance glass scintillators; and (iii) determination of the electrical impacts of dislocation networks in Cd_1-xZn_xTe (CZT) that limit its performance and usable single-crystal volume. The specific goals are to establish design and process strategies to achieve improved materials for high performance detectors. Each of the major tasks is discussed below in three sections, which include the goals for the task and a summary of the major results, followed by a listing of publications that contain the full details, including details of the methodologies used. The appendix lists 12 conference presentations given for this project, including 1 invited talk and 1 invited poster.

Bibliographical study on the high-purity germanium radiation detectors used in gamma and X spectrometry

International Nuclear Information System (INIS)

Bornand, Bernard; Friant, Alain

1979-03-01

The germanium or silicon lithium-drifted detectors, Ge(Li) or Si(Li), and high-purity germanium detectors, HP Ge (impurity concentration approximately 10 10 cm -3 ), are the most commonly used at the present time as gamma and X-ray spectrometers. The HP Ge detectors for which room temperature storage is the main characteristic can be obtained with a large volume and a thin window, and are used as the Ge(Li) in γ ray spectrometry or the Si(Li) in X-ray spectrometry. This publication reviews issues from 1974 to 1978 on the state of the art and applications of the HP Ge semiconductor detectors. 101 bibliographical notices with French summaries are presented. An index for authors, documents and periodicals, and subjects is included [fr

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Synchrotron radiation and multichannel detectors in structural analysis

Energy Technology Data Exchange (ETDEWEB)

Mokulskii, M

1979-10-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO/sub 2/ as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels.

Synchrotron radiation and multichannel detectors in structural analysis

International Nuclear Information System (INIS)

Mokulskij, M.

1979-01-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO 2 as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels. (J.B.)

Detectors for particle radiation. 2. rev. ed.

International Nuclear Information System (INIS)

Kleinknecht, K.

1987-01-01

This book is a description of the set-up and mode of action of detectors for charged particles and gamma radiation for students of physics, as well as for experimental physicists and engineers in research and industry: Ionization chamber, proportional counter, semiconductor counter; proportional chamber, drift chamber, bubble chamber, spark chamber, photomultiplier, laser ionization, silicion strip detector; Cherenkov counter, transition radiation detector; electron-photon-cascade counter, hadron calorimeter; magnetic spectrometer; applications in nuclear medicine, geophysics, space travel, atom physics, nuclear physics, and high-energy physics. With 149 figs., 20 tabs [de

Method of neutralising the effects of electromagnetic radiation in a radiation detector and a radiation detector applying the procedure

International Nuclear Information System (INIS)

Gripentog, W.G.

1972-01-01

Circuitry is described by means of which radiation detectors of the Neher-White type, employing ionisation chambers can be unaffected by electromagnetic radiation which would otherwise cause inductive effects leading to erroneous signals. It is therefore unnecessary to use shielded cables for these instruments. (JIW)

Long-distance transmission of light in a scintillator-based radiation detector

Science.gov (United States)

Dowell, Jonathan L.; Talbott, Dale V.; Hehlen, Markus P.

2017-07-11

Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

18th International Workshop on Radiation Imaging Detectors

CERN Document Server

2016-01-01

The International Workshops on Radiation Imaging Detectors are held yearly and provide an international forum for discussing current research and developments in the area of position sensitive detectors for radiation imaging, including semiconductor detectors, gas and scintillator-based detectors. Topics include processing and characterization of detector materials, hybridization and interconnect technologies, design of counting or integrating electronics, readout and data acquisition systems, and applications in various scientific and industrial fields. The workshop will have plenary sessions with invited and contributed papers presented orally and in poster sessions. The invited talks will be chosen to review recent advances in different areas covered in the workshop.

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

Study the radiation damage effects in Si microstrip detectors for future HEP experiments

International Nuclear Information System (INIS)

Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

2016-01-01

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

Study the radiation damage effects in Si microstrip detectors for future HEP experiments

Energy Technology Data Exchange (ETDEWEB)

Lalwani, Kavita, E-mail: kavita.phy@mnit.ac.in [Malaviya National Institute of Technology (MNIT) Jaipur, Jaipur-302017 (India); Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh [University of Delhi (DU), Delhi-110007 (India)

2016-07-15

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

Calorimetric low temperature detectors for heavy ion physics

Energy Technology Data Exchange (ETDEWEB)

Egelhof, P.; Kraft-Bermuth, S. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)]|[Mainz Univ. (Germany). Inst. fuer Physik

2005-05-01

Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ({sup 4}He.. {sup 238}U). Excellent results with respect to energy resolution, {delta}E/E ranging from 1 to 5 x 10{sup -3} even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of {sup 236}U by one order of magnitude and to determine the up to date smallest isotope ratio of {sup 236}U/{sup 238}U = 6.1 x 10{sup -12} in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also

Calorimetric low temperature detectors for heavy ion physics

International Nuclear Information System (INIS)

Egelhof, P.; Kraft-Bermuth, S.; Mainz Univ.

2005-07-01

Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ( 4 He.. 238 U). Excellent results with respect to energy resolution, ΔE/E ranging from 1 to 5 x 10 -3 even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of 236 U by one order of magnitude and to determine the up to date smallest isotope ratio of 236 U/ 238 U = 6.1 x 10 -12 in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also provides considerable advantage for X

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

Radiation detector

Energy Technology Data Exchange (ETDEWEB)

Ohata, Shuichi; Takeuchi, Yoji

1968-10-30

Herein disclosed is an ionization chamber the airtightness of which can be readily tested. The ionization chamber is characterized in that a small amount of helium gas is filled in the chamber in combination with other ionization gases such as argon gas, xenon gas and the like. Helium leakage from the chamber is measured by a known helium gas sensor in a vacuum vessel. Hence the long term drift of the radiation detector sensitivity may be determined.

Analysis of changes in environmental radiation, and three types of environmental radiation detector performance comparisons

International Nuclear Information System (INIS)

Park, J.H; Seo, J.H; Park, S.M; Yu, B.N; Park, J.H; Joo, K.S

2013-06-01

High-pressure ion chamber (GE Reuter-Stokes, HPIC), accuracy is high but the high price and do not have the ability nuclide analysis is a disadvantage. NaI(Tl) and PMT scintillation detector of radioactive materials can be divided. Environmental radiation measurements using a semiconductor with SiPM detector PMT to replace the value of the results were compared. SiPM detector using radiation environment were measured in the field to verify the accuracy and energy resolution. SiPMs performance as environmental radiation measurement equipment and radioactive material distinction as a personal dosimeter based technology, using the above results were prepared. The interest on the environmental radiation due to the Fukushima power plant crisis in Japan has been growing concern about the radiation environment of the relatively close proximity Korea is a very heightened state. Could be confirmed in the radiation environment of nuclear power plants around the analysis and performance of the next generation of environmental radiation meter. Fukushima power plants accident after 2 years, the equipment installed by this analysis meets the performance as a radiation detector could be confirmed as follows. CANA Inc. developed by radionuclides classification of using man-made and natural radionuclides and man-made radionuclides separated, ensure the value of the results were analyzed. Could be and alternative to the conventional detector energy resolution ( 137 CS<15%) and linearity (<15%) to satisfy the performance requirements of the measurement result of environmental radiation detector is considered. SiPM radiation environment changes and HPIC and NaI(TI) scintillation detector installed in Korea of the Fukushima power plant after the accident, radiation environment using a small alternative was to verify the accuracy of the measuring equipment. A big difference in performance as invisible by comparison with the large detector Assay miniaturization rough as a personal

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

Science.gov (United States)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Monolithic active pixel radiation detector with shielding techniques

Energy Technology Data Exchange (ETDEWEB)

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Successful beam tests for ALICE Transition Radiation Detector

CERN Multimedia

2002-01-01

Another round of beam tests of prototypes for the Transition Radiation Detector (TRD) for ALICE has been completed and there are already some good results. Mass production of the components of the detector will start early next year.   Top view of the setup for the Transition Radiation Detector prototype tests at CERN.On the left, can be seen the full-scale TRD prototype together with four smaller versions. These are busy days for the TRD (Transition Radiation Detector) team of ALICE. Twenty people - mainly from Germany, but also from Russia and Japan - were working hard during the beam tests this autumn at CERN to assess the performance of their detector prototypes. Analysis of the data shows that the TRD can achieve the desired physics goal even for the highest conceivable multiplicities in lead-lead collisions at the LHC. In its final configuration in the ALICE experiment, the TRD will greatly help in identifying high-momentum electrons, which are 'needles in a haystack' that consists mostly of...

The Development of a Hybrid-Type Radiation Detector with SiC for a Reactor Robot

International Nuclear Information System (INIS)

Lee, Nam Ho; Cho, Jai Wan; Kim, Seung Ho

2005-01-01

For a robot working in a harsh environment such as a nuclear reactor environment or a space environment, requirements of on-board radiation detectors are not the same as those for environments around human. SiC devices with the wide band-gap are less dependent on temperature than Si counterparts and the can be the better candidate for the high radiation environment. With this background, radiation performance of a commercial SiC detector in a Co-60 gamma-ray environment has been evaluated. In addition to the SiC detector, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detector has been incorporated as a backup. With this MOSFET sensor the dosimeter can keep its radiation exposure history even with loss of power. It is not only a redundant feature but also a diverse feature. The dosimetry module can be attached to mobile robot for high radiation environment was developed. This module has both SiC diode and pMOSFET mentioned above. The monitoring program which receives the radiation information from them and gives out the alarm signal when the difference of the two values from them is over the preset level was constructed. Because both the SiC pulse-type detector and the MOSFET dosimeter are small and light weight, they can be easily accommodated on a small printcircuit board for a tight space on a robot arm or for a small spacecraft

Transition-radiation detectors for cosmic-ray research

International Nuclear Information System (INIS)

Mueller, D.; Chicago Univ., Ill.

1975-01-01

Transition-radiation detectors for cosmic-ray work are described which consist of plastic foam of multiple plastic foil radiators, followed by proportional chambers. A summary of the properties of such detectors is given, and the detection and discrimination efficiencies for energetic particles are discussed. Several possible applications of such devices for studies of cosmic-ray particles in the energy region γ=E/mc 2 >10 3 are advertised

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

2009-01-01

Roč. 598, č. 3 (2009), s. 759-763 ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

PAMELA Space Mission: The Transition Radiation Detector

Science.gov (United States)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2003-07-01

PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

X-Ray and Gamma-Ray Radiation Detector

DEFF Research Database (Denmark)

2015-01-01

Disclosed is a semiconductor radiation detector for detecting X-ray and / or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch...... (P) along a first axis, a plurality of drift electrodes, a readout circuitry being configured to read out signals from the plurality of detector electrodes and a processing unit connected to the readout circuitry and being configured to detect an event in the converter element. The readout circuitry...... is further configured to read out signals from the plurality of drift electrodes, and the processing unit is further configured to estimate a location of the event along the first axis by processing signals obtained from both the detector electrodes and the drift electrodes, the location of the event along...

Radiation field mapping using a mechanical-electronic detector

Energy Technology Data Exchange (ETDEWEB)

Czayka, M., E-mail: mczayka@kent.ed [College of Technology, Kent State University-Ashtabula 3300 Lake Road West, Ashtabula, OH 44004 (United States); Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); Fisch, M. [Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); College of Technology, Kent State University, P.O. Box 5190, Kent, OH 44242-0001 (United States)

2010-04-15

A method of radiation field mapping of a scanned electron beam using a Faraday-type detector and an electromechanical linear translator is presented. Utilizing this arrangement, fluence and fluence rate measurements can be made at different locations within the radiation field. The Faraday-type detector used in these experiments differs from most as it consists of a hollow stainless steel sphere. Results are presented in two- and three-dimensional views of the radiation field.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Influence of pre-measurement thermal treatment on OSL of synthetic quartz measured at room temperature

International Nuclear Information System (INIS)

Kale, Y.D.; Gandhi, Y.H.

2008-01-01

Much effort has been made to study the influence of pre-measurement thermal treatment and ionizing radiation on quartz specimens owing to its use in a large number of applications. Optically stimulated luminescence (OSL) being a structured and sensitive phenomenon promises to correlate the responsible color center and luminescence emission. OSL studies on quartz with such conditions can reveal many significant results. The aim of the present investigation is to understand the effect of annealing temperature on OSL characteristics of synthetic quartz recorded at room temperature. At identical annealing duration and β-dose, the shape of OSL decay curve remains non-exponential; when specimens annealed at lower temperature (∼400 deg. C). The shape of decay curve changes to exponential in nature along with rise in OSL intensity when the specimen was given higher temperature of annealing (>400 deg. C). The effects of such protocol on pattern of OSL sensitivity as well as area under the OSL decay curve are also presented here. The presence of shallow traps, when OSL decay curve was recorded at room temperature seems to be responsible for the changes in OSL pattern. The influence of shallow traps is attributed to non-exponential decay of OSL recorded at room temperature

Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

Energy Technology Data Exchange (ETDEWEB)

Ferraz, Caue de Mello

2016-11-01

This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)

Radiation damage in barium fluoride detector materials

International Nuclear Information System (INIS)

Levey, P.W.; Kierstead, J.A.; Woody, C.L.

1988-01-01

To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF 2 , both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF 2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 60 C0 gamma rays. Doses of 10 6 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF 2 develop damage at minimum detectable levels in the UV---which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials

Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures

CERN Document Server

Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Petasecca, M; Pignatel, Giogrio Umberto

2004-01-01

Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/cm /sup -2/ 1-MeV neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called "three-level model" has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection spectra obtained wit...

Multi-sensor radiation detector system

International Nuclear Information System (INIS)

Foster, R.G.; Cyboron, R.D.

1975-01-01

The invention is a multi-sensor radiation detection system including a self-powered detector and an ion or fission chamber, preferably joined as a unitary structure, for removable insertion into a nuclear reactor. The detector and chamber are connected electrically in parallel, requiring but two conductors extending out of the reactor to external electrical circuitry which includes a load impedance, a voltage source, and switch means. The switch means are employed to alternately connect the detector and chamber either with th load impedance or with the load impedance and the voltage source. In the former orientation, current through the load impedance indicates flux intensity at the self-powered detector and in the latter orientation, the current indicates flux intensity at the detector and fission chamber, though almost all of the current is contributed by the fission chamber. (auth)

Proceedings of the workshop on radiation detector and its application

International Nuclear Information System (INIS)

1996-01-01

This workshop was held from January 23 to 25, 1996 at National Laboratory for High Energy Physics. At the workshop, lectures were given on the development of the single ion detector using MCP in heavy ion microbeam device, the response of MCP to single heavy ion, the response of a superheated liquid drop type detector to low LET radiation, the response characteristics of a CR-39 flight track detector to hydrogen isotopes, the analysis of small nuclear flight tracks on CR-39 with an interatomic force microscope, charge-sensible amplifiers, the signal-processing circuit for position detection, time and depth-resolved measurement of ion tracks in condensed matter, the response of a thin Si detector to electrons, the method of expressing gas-amplifying rate curves in proportional count gas for low temperature, the characteristics of self annihilating streamer by ultraviolet laser, the development of slow positron beam using radioisotopes, the development of a tunnel junction type x-ray detector, the development of the pattern-analyzing system for PIXE spectra, the characteristics of NE213-CaF 2 bond type neutron detector and many others. In this report, the gists of these papers are collected. (K.I.)

Continuous-wave room-temperature diamond maser

Science.gov (United States)

Breeze, Jonathan D.; Salvadori, Enrico; Sathian, Juna; Alford, Neil Mcn.; Kay, Christopher W. M.

2018-03-01

The maser—the microwave progenitor of the optical laser—has been confined to relative obscurity owing to its reliance on cryogenic refrigeration and high-vacuum systems. Despite this, it has found application in deep-space communications and radio astronomy owing to its unparalleled performance as a low-noise amplifier and oscillator. The recent demonstration of a room-temperature solid-state maser that utilizes polarized electron populations within the triplet states of photo-excited pentacene molecules in a p-terphenyl host paves the way for a new class of maser. However, p-terphenyl has poor thermal and mechanical properties, and the decay rates of the triplet sublevel of pentacene mean that only pulsed maser operation has been observed in this system. Alternative materials are therefore required to achieve continuous emission: inorganic materials that contain spin defects, such as diamond and silicon carbide, have been proposed. Here we report a continuous-wave room-temperature maser oscillator using optically pumped nitrogen–vacancy defect centres in diamond. This demonstration highlights the potential of room-temperature solid-state masers for use in a new generation of microwave devices that could find application in medicine, security, sensing and quantum technologies.

Radiometric analyzer with plural radiation sources and detectors

International Nuclear Information System (INIS)

Arima, S.; Oda, M.; Miyashita, K.; Takada, M.

1977-01-01

A radiometric analyzer for measuring characteristics of a material by radiation comprises a plurality of systems in which each consists of a radiation source and a radiation detector which are the same in number as the number of elements of the molecule of the material and a linear calibration circuit having inverse response characteristics (calibration curve) of the respective systems of detectors, whereby the measurement is carried out by four fundamental rules by operation of the mutual outputs of said detector system obtained through said linear calibration circuit. One typical embodiment is a radiometric analyzer for hydrocarbons which measures the density of heavy oil, the sulfur content and the calorific value by three detector systems which include a γ-ray source (E/sub γ/ greater than 50 keV), a soft x-ray source (Ex approximately 20 keV), and a neutron ray source. 2 claims, 6 figures

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1998-01-01

(full text) Work carried out in 1997 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification using Ion and Plasma Beams. Semiconductor detectors: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The Department all objectives are: - search for new types of detectors, - adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, - producing unique detectors tailored for physics experiments, - manufacturing standard detectors for radiation measuring instruments, - scientific development of the staff. These 1997 objectives were accomplished particularly by: - research on unique detectors for nuclear physics (e.g. transmission type Si(Li) detectors with extremely thin entrance and exit window), - development of technology of high-resistivity (HRSi) silicon detectors and thermoelectric cooling systems (KBN grant), - study of the applicability of industrial planar technology in producing detectors, - manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishing of the above, the Department cooperated with interested groups of physicists from our Institute (P-I and P-II Departments), Warsaw University, Warsaw Heavy Ion Laboratory and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Rat tube generators: The Department conducts research on design and technology of producing X-ray generators based on X-ray tubes of special construction. In 1997, work on a special

The design of intelligentized nuclear radiation monitoring detector

International Nuclear Information System (INIS)

Meng Yan; Fang Zongliang; Wen Qilin; Li Lirong; Hu Jiewei; Peng Jing

2010-01-01

This paper introduced an intelligentized nuclear radiation monitoring detector. The detector contains GM tubes, high voltage power supply and MCU circuit. The detector connect terminal via reformative serial port to provide power, accept the data and sent the command. (authors)

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Recent results on the development of radiation-hard diamond detectors

CERN Document Server

Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

1999-01-01

Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

Radiation damage: special reference to gas filled radiation detectors

International Nuclear Information System (INIS)

Gaur, Sudha; Joshi, Pankaj Kumar; Rathore, Shakuntla

2012-01-01

Radiation damage is a term associated with ionizing radiation. In gas filled particle detectors, radiation damage to gases plays an important role in the device's ageing, especially in devices exposed to high intensity radiation, e.g. detector for the large hadrons collide. Ionization processes require energy above 10 eV, while splitting covalent bond in molecules and generating free radical require only 3-4 eV. The electrical discharges initiated by the ionization event by the particles result in plasma populated by large amount of free radical. The highly reactive free radical can recombine back to original molecules, or initiate a chain of free radical polymerization reaction with other molecules, yielding compounds with increasing molecular weight. These high molecular weight compounds then precipitate from gases phase, forming conductive or non-conductive deposits on the electrodes an insulating surfaces of the detector and distorting it's response. Gases containing hydrocarbon quenchers, e.g. argon-methane, are typically sensitive to ageing by polymerization; addition of oxygen tends to lower the ageing rates. Trace amount of silicon oils, present form out gassing of silicon elastomers and especially from traces of silicon lubricant tend to decompose and form deposits of silicon crystals on the surfaces. Gases mixture of argon (or xenon) with CO 2 and optimally also with 2-3 % of oxygen are highly tolerant to high radiation fluxes. The oxygen is added as noble gas with CO 2 has too high transparency for high energy photons; ozone formed from the oxygen is a strong absorber of ultra violet photons. Carbon tetra fluoride can be used as a component of the gas for high-rate detectors; the fluorine radical produced during the operation however limit the choice of materials for the chambers and electrodes (e.g. gold electrodes are required, as the fluorine radicals attack metals, forming fluorides). Addition of carbon tetra fluoride can however eliminate the

X radiations dosimetry in pulmonary radiographs: study of a non standard room

International Nuclear Information System (INIS)

Bied, J.C.; Philippon, B.

1998-01-01

A radiograph room can present a default of radiation protection. But it is possible that the radiation protection is here only to mask a protection of an other type. For the case of a lungs type radiograph room, the monitoring does not reveal any problem of radiation protection. These results do not bring to the fore any high radiations doses. But they are an illustration of operators positions, and these ones should be better protected at the extremity of the room, that should allow a correct vision of lungs radiographs and a more important limitation of irradiation. (N.C.)

Ultrasonic acoustic levitation for fast frame rate X-ray protein crystallography at room temperature

Science.gov (United States)

Tsujino, Soichiro; Tomizaki, Takashi

2016-05-01

Increasing the data acquisition rate of X-ray diffraction images for macromolecular crystals at room temperature at synchrotrons has the potential to significantly accelerate both structural analysis of biomolecules and structure-based drug developments. Using lysozyme model crystals, we demonstrated the rapid acquisition of X-ray diffraction datasets by combining a high frame rate pixel array detector with ultrasonic acoustic levitation of protein crystals in liquid droplets. The rapid spinning of the crystal within a levitating droplet ensured an efficient sampling of the reciprocal space. The datasets were processed with a program suite developed for serial femtosecond crystallography (SFX). The structure, which was solved by molecular replacement, was found to be identical to the structure obtained by the conventional oscillation method for up to a 1.8-Å resolution limit. In particular, the absence of protein crystal damage resulting from the acoustic levitation was carefully established. These results represent a key step towards a fully automated sample handling and measurement pipeline, which has promising prospects for a high acquisition rate and high sample efficiency for room temperature X-ray crystallography.

Detection of nuclear radiations; Detectores de radiaciones nucleares

Energy Technology Data Exchange (ETDEWEB)

Tanarro Sanz, A

1959-07-01

A summary of the lectures about the ordinary detectors of nuclear radiations given by the author in the Courses of Introduction to Nuclear Engineering held at the JEN up to the date of publication is given. Those lectures are considered to be a necessary introduction to Nuclear Instrumentation and Applied electronics to Nuclear Engineering so it has been intent to underline those characteristics of radiation detectors that must be taken in consideration in choosing or designing the electronic equipment associated to them in order to take advantage of each detector possibilities. (Author) 8 refs.

Heterodyne detection at 300 GHz using neon indicator lamp glow discharge detector.

Science.gov (United States)

Aharon Akram, Avihai; Rozban, Daniel; Kopeika, Natan S; Abramovich, Amir

2013-06-10

A miniature neon indicator lamp, also known as a glow discharge detector (GDD), costing about 50 cents, was found to be an excellent room temperature terahertz radiation detector. Proof-of-concept 300 GHz heterodyne detection using GDD is demonstrated in this paper. Furthermore, a comparison to direct detection was carried out as well. Previous results with the GDD at 10 GHz showed 40 times better sensitivity using heterodyne detection compared to direct detection. Preliminary results at 300 GHz showed better sensitivity by a factor of 20 with only 56 μW local-oscillator power using heterodyne compared to direct detection. The higher the local-oscillator power (P(lo)), the better the sensitivity of the detector. Further improvement can be achieved by employing better quasi-optical design.

ALICE Transition Radiation Detector

CERN Multimedia

Pachmayer, Y

2013-01-01

The Transition Radiation Detector (TRD) is the main electron detector in ALICE. In conduction with the TPC and the ITS, it provides the necessary electron identification capability to study: - Production of light and heavy vector mesons as well as the continuum in the di-electron channel, - Semi leptonic decays of hadrons with open charm and open beauty via the single-electron channel using the displaced vertex information provided by the ITS, - Correlated DD and BB pairs via coincidences of electrons in the central barrel and muons in the forward muon arm, - Jets with high Pτ tracks in one single TRD stack.

Application of Rossi-type detectors in radiation protection

International Nuclear Information System (INIS)

Menzel, H.G.; Hartmann, G.H.; Krauss, O.; Deutsches Krebsforschungszentrum, Heidelberg

1983-01-01

Rossi-type detectors can measure the energy dose and the pertinent quality factor simultaneously and independent of the radiation. This is possible because these detectors are able to measure the energy as well as the LET distribution of the measured radiation. The quality factor is then calculated on this basis. The principle of measurement, problems and solutions are discussed. (orig./HP) [de

Characterisation of SI Detectors for the Use at 2 K*

CERN Document Server

Bartosik, M; Eisel, T; Kurfuerst, C; Rementeria, C; Sapinski, M; Eremin, V; Verbitskaya, E

2013-01-01

It is expected that the luminosity of the Large Hadron Collider (LHC) will be bounded in the future by the beam loss limits of the superconducting magnets. To protect the superconducting magnets of the high luminosity insertions an optimal detection of the energy deposition by the shower of beam particles is necessary. Therefore beam Loss Monitors (BLM) need to be placed close to the particle impact location in the cold mass of the magnets where they should operate in superfluid helium at 1.9 Kelvin. To choose optimal detectors n-type silicon wafers have been examined at superfluid helium temperature whilst under irradiation from a high intensity proton beam. The radiation hardness and leakage current of these detectors were found to be significantly improved at 1.9 Kelvin when compared to their operation at room temperature.

Preparation of lithium fluoride for thermoluminescent detectors of ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Mironenko, S.N.; Nepomnyashchikh, A.I.; Ikrami, D.D.; Paramzin, A.S.; Rakhimov, M.Eh.

1985-03-01

The thermostimulated luminescence (TSL) of lithium fluoride monocrystals depending on the method of preparation of starting raw material and features of its preliminary processing is investigated. It is shown that only lithium fluoride of high purity prepared through the stage of formation of hydrofluoride and its subsequent decomposition can be used without any additional processing for manufacturing monocrystal detectors of thermoluminescent dosimetry of the ionizing radiation with low intensity of low temperature peaks.

Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

International Nuclear Information System (INIS)

Gow, J P D; Smith, P H; Hall, D J; Holland, A D; Murray, N J; Pool, P

2015-01-01

A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at −35.4°C with a 10 MeV equivalent proton fluence of 5.0 × 10 8 protons · cm −2 . The CCD236 is a large area (4.4 cm 2 ) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation

Diamond and silicon pixel detectors in high radiation environments

Energy Technology Data Exchange (ETDEWEB)

Tsung, Jieh-Wen

2012-10-15

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

Diamond and silicon pixel detectors in high radiation environments

International Nuclear Information System (INIS)

Tsung, Jieh-Wen

2012-10-01

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

Radiation and detectors introduction to the physics of radiation and detection devices

CERN Document Server

Cerrito, Lucio

2017-01-01

This textbook provides an introduction to radiation, the principles of interaction between radiation and matter, and the exploitation of those principles in the design of modern radiation detectors. Both radiation and detectors are given equal attention and their interplay is carefully laid out with few assumptions made about the prior knowledge of the student. Part I is dedicated to radiation, broadly interpreted in terms of energy and type, starting with an overview of particles and forces, an extended review of common natural and man-made sources of radiation, and an introduction to particle accelerators. Particular attention is paid to real life examples, which place the types of radiation and their energy in context. Dosimetry is presented from a modern, user-led point of view, and relativistic kinematics is introduced to give the basic knowledge needed to handle the more formal aspects of radiation dynamics and interaction. The explanation of the physics principles of interaction between radiation an...

Thermoregulated Nitric Cryosystem for Cooling Gas-Filled Detectors of Ionizing Radiation

Directory of Open Access Journals (Sweden)

Zharkov I.P.

2015-09-01

Full Text Available Cryosystem for cooling and filling of gas-filled detectors of ionizing radiation with compressed inert gas on the basis of wide-nitrogen cryostat, which provides detetector temperature control in a range of 173 — 293 K and its stabilization with accuracy of ± 1°. The work was carried out within the Ukraine — NATO Program of Collaboration, Grant SfP #984655.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1999-01-01

Full text: Work carried out in 1998 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. SEMICONDUCTOR DETECTORS: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The departmental objectives are: a search for new types of detectors; producing unique detectors tailored for physics experiments; manufacturing standard detectors for radiation measuring instruments; scientific development of the staff. These objectives were accomplished in 1998 particularly by: research on unique thin silicon detectors for identification of particles in E-ΔE telescopes, modernization of technology of manufacturing Ge(Li) detectors capable of detecting broader range of gamma energies, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishment of the above the Department co-operated with groups of physicists from IPJ, PAN Institute of Physics (Warsaw), and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Ray TUBE GENERATORS: The Department conducts research on design and technology of manufacturing X-ray generators as well as on imaging and dosimetry of X-ray beams. Various models of special construction X-ray tubes and their power supplies are under construction. In 1998 work concentrated on: completing laboratory equipment for manufacturing X-ray tubes and their components, developing technology of manufacturing X-ray tubes and their components, completing a laboratory set-up with

A Designed Room Temperature Multilayered Magnetic Semiconductor

Science.gov (United States)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

International Nuclear Information System (INIS)

Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

2003-01-01

We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

Radiation tests at cryogenic temperature on selected organic materials for LHC

International Nuclear Information System (INIS)

Humer, K.; Weber, H.W.; Szeless, B.; Tavlet, M.

1997-01-01

Future multi-TeV particle accelerators like the CERN Large Hadron Collider (LHC) will use superconducting magnets in which organic materials will be exposed to high radiation levels at temperatures as low as 2 K. A representative selection of organic materials comprising insulating films, cable insulations, epoxy resins and composites were exposed to neutron and gamma radiation of a nuclear reactor. Depending on the type of materials, the integrated radiation doses varied between 180 kGy and 155 MGy. During irradiation, the samples were kept close to the boiling temperature of liquid nitrogen, i.e. at 80 K, and thereafter stored in liquid nitrogen and transferred at the same temperature into the testing device for measurement of tensile and flexural strength. Tests were carried out on the same materials at similar dose rates at room temperature, and the results are compared with the ones obtained at cryogenic temperature. They show that within the selected dose range, a number of organic materials are suitable for use in radiation fields of the LHC at cryogenic temperature

Simple dynamic electromagnetic radiation detector

Science.gov (United States)

Been, J. F.

1972-01-01

Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

Room temperature exchange bias in SmFeO_3 single crystal

International Nuclear Information System (INIS)

Wang, Xiaoxiong; Cheng, Xiangyi; Gao, Shang; Song, Junda; Ruan, Keqing; Li, Xiaoguang

2016-01-01

Exchange bias phenomenon is generally ascribed to the unidirectional magnetic shift along the field axes at interface of two magnetic materials. Room temperature exchange bias is found in SmFeO_3 single crystal. The behavior after different cooling procedure is regular, and the training behavior is attributed to the athermal training and its pinning origin is attributed to the antiferromagnetic clusters. Its being single phase and occurring at room temperature make it an appropriate candidate for application. - Graphical abstract: Room temperature exchange bias was found in oxide single crystal. Highlights: • Room temperature exchange bias has been discovered in single-crystalline SmFeO_3. • Its pinning origin is attributed to the antiferromagnetic clusters. • Its being single phase and occurring at room temperature make it an appropriate candidate for application.

Two investigations concerning the release of tritium. I. Tritium leakage from 3H(Sc) EC-detectors

International Nuclear Information System (INIS)

Bergman, C.; Wesslen, E.

1977-01-01

Recently the manufacturers of EC-detectors for gas chromatographs introduced a new type of 3 H EC-detector where the tritium is bound to scandium instead of to titanium and has an activity up to 1 Ci. It is expected that the scandium-based detector will take a great part of the Swedish EC-detector market. The Swedish National Institute of Radiation Protection is anxious to make sure that the introduction of the new detector, which will be used at higher temperature, will not give rise to any increased risk of tritium intake to the personnel handling the chromatographs. The leakage of tritium from commercially available 3 H(Sc) EC-detectors containing 1 Ci of tritium was measured as a function of the detector temperature. Tritium appears both in the form of tritium gas dissolved in the scandium and in the form of tritide. The gas evaporates rather easily with increasing temperature while the dissociation of the tritide is a slower process. The evaporation of tritium due to the dissociation of the tritide was found to be negligible, less than 0.2 μCi/h at temperatures less than 100 0 C, but rises rapidly with temperature. The study also showed that even when the detector is stored at room temperature, a re-distribution of the tritium occures, from the tritide to the dissolved tritium gas, which then easily evaporates even at moderately elevated temperatures

Radiation effects in polymers for plastic scintillation detectors

International Nuclear Information System (INIS)

Pla-Dalmau, A.; Bross, A.D.; Hurlbut, C.R.; Moser, S.W.

1994-01-01

Recent developments in both scintillating plastic optical fibers and photon detection devices have spawned new applications for plastic scintillator detectors. This renewed attention has encouraged research that addresses the radiation stability of plastic scintillators. The optical quality of the polymer degrades with exposure to ionizing radiation and thus the light yield of the detector decreases. A complete understanding of all the mechanisms contributing to this radiation-induced degradation of the polymer can lead to techniques that will extend the radiation stability of these materials. Various radiation damage studies have been performed under different atmospheres and dose rates. Currently, the use of additives to preserve the optical properties of the polymer matrix under radiation is being investigated. The authors discuss the effect of certain antioxidants, plasticizers, and cross-linking agents on the radiation resilience of plastic scintillators

Gamma-ray detectors for intelligent, hand-held radiation monitors

International Nuclear Information System (INIS)

Fehlau, P.E.

1983-01-01

Small radiation detectors based on HgI 2 , bismuth germanate (BGO), plastic, or NaI(Tl) detector materials were evaluated for use in small, lighweight radiation monitors. The two denser materials, HgI 2 and BGO, had poor resolution at low-energy and thus performed less well than NaI(Tl) in detecting low-energy gamma rays from bare, enriched uranium. The plastic scintillator, a Compton recoil detector, also performed less well at low gamma-ray energy. Two small NaI(Tl) detectors were suitable for detecting bare uranium and sheilded plutonium. One became part of a new lightweight hand-held monitor and the other found uses as a pole-mounted detector for monitoring hard-to-reach locations

Development of re-crystallized W-1.1%TiC with enhanced room-temperature ductility and radiation performance

International Nuclear Information System (INIS)

Kurishita, H.; Matsuo, S.; Arakawa, H.; Sakamoto, T.; Kobayashi, S.; Nakai, K.; Takida, T.; Kato, M.; Kawai, M.; Yoshida, N.

2010-01-01

Ultra-fine grained (UFG) W-TiC compacts fabricated by powder metallurgical methods utilizing mechanical alloying (MA) are very promising for use in irradiation environments. However, the assurance of room-temperature ductility and enhancement in surface resistances to low-energy hydrogen irradiation are unsettled issues. As an approach to solution to these, microstructural modification by hot plastic working has been applied to UFG W-TiC processed by MA in a purified Ar or H 2 atmosphere and hot isostatic pressing (HIP). Hot plastically worked compacts have been subjected to 3-point bend tests at room temperature and TEM microstructural examinations. It is found that the microstructural modification allows us to convert UFG W-1.1%TiC to compacts exhibiting a very high fracture strength and appreciable ductility at room temperature. The compacts of W-1.1%TiC/Ar (MA atmosphere: Ar) and W-1.1%TiC/H 2 (MA atmosphere: H 2 ) exhibit re-crystallized structures with approximately 0.5 and 1.5 μm in grain size, respectively. It is shown that the enhancement of fracture resistance by microstructural modifications is attributed to significant strengthening of weak grain boundaries in the re-crystallized state. As a result the modified compacts exhibit superior surface resistance to low-energy deuteron irradiation.

Development of a sealed source radiation detector system for gamma ray scanning of petroleum distillation columns

International Nuclear Information System (INIS)

Vasquez Salvador, Pablo Antonio

2004-01-01

Gamma Ray Scanning is an online technique to 'view' the hydraulic performance of an operating column, with no disruption to operating processes conditions (pressure and temperature), as a cost-effective solution. The principle of this methodology consists of a small suitably sealed gamma radiation source and a radiation detector experimentally positioned to the column, moving concurrently in small increments on opposite sides and the quantity of gamma transmitted. The source-detector system consists of: a sealed ''6 0 Co radioactive source in a panoramic lead radiator, a scintillator detector coupled to a ratemeter / analyzer and a mobile system. In this work, a gamma scanning sealed source-detector system for distillation columns, was developed, comparing two scintillator detectors: NaI(Tl) (commercial) and CsI(Tl) (IPEN). In order to project the system, a simulated model of a tray-type distillation column was used. The equipment developed was tested in an industrial column for water treatment (6.5 m diameter and 40 m height). The required activities of 6 ''0Co, laboratory (11.1 MBq) and industrial works (1.48 TBq) were calculated by simulation software. Both, the NaI(Tl) and the CsI(Tl) detectors showed good proprieties for gamma scanning applications, determining the position and presence or absence of trays. (author)

Electromagnetic disturbance neutralizing radiation detector

International Nuclear Information System (INIS)

Gripentog, W.G.

1975-01-01

A radiation detector of the Neher-White type is described which automatically neutralizes induced negative charges on the electrometer tube control grid which shut off the electrometer tube. The detector includes means for establishing a voltage of one polarity in response to plate current and voltage of opposite polarity in response to an absence of plate current and means for connecting the control grid to a reference potential for draining the negative charge in response to the voltage of opposite polarity. (author)

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

International Nuclear Information System (INIS)

Ruddy, Frank H.; Seidel, John G.

2007-01-01

Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 deg. C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137 Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress

Radiation response issues for infrared detectors

Science.gov (United States)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

The history of radiation spectrometry

International Nuclear Information System (INIS)

Mori, Kunishiro

2007-01-01

Recently combination of charge sensitive amplifier, pulse shape amplifier and multi-channel PHA (MCA) is regarded as standard configuration of radiation spectrometry. PHA history shows various kinds of MCA devices before we have obtained original digital ADC technology based MCA in 1960s. Those MCAs include interesting ones such as photographic type, which still keep fresh ideas even today. Room temperature preamplifiers are classified to low, medium range, and large capacitance (over 10000pF) detectors keeping ultra low noise. (author)

Extraction of plutonium from lean residues by room temperature fluoride volatility

International Nuclear Information System (INIS)

Campbell, G.M.; Foropoulos, J.; Kennedy, R.C.; Dye, B.A.; Behrens, R.G.

1989-01-01

The use of dioxygen difluoride (FOOF) and KrF 2 for the recovery of Pu from lean residues by conversion to gaseous PuF 6 is being investigated. The greater stability of PuF 6 at room temperature allows much more extensive removal of Pu from contaminated wastes, when compared to the high temperature fluoride volatility process. The process also requires fewer additive chemicals than aqueous processes, thus minimizing the amount of material that must be disposed of as radioactive waste. The transportability of gaseous PuF 6 allows much of the process to be automated, reducing operator exposure to radiation. Removal of PuF 6 decomposition product is easily facilitated by the use of these fluorinating agents. 9 refs., 8 figs

Solid-state radiation detectors technology and applications

CERN Document Server

2015-01-01

The book discusses the current solid state material used in advance detectors manufacturing and their pros and cons and how one can tailor them using different techniques, to get the maximum performance. The book is application oriented to radiation detectors for medical, X and gamma rays application, and good reference with in-depth discussion of detector's physics as it relates to medical application tailored for engineers and scientists.

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

Application of solid state track detector to neutron dosimetry

International Nuclear Information System (INIS)

Tsuruta, Takao

1979-01-01

Though solid state track detectors (SSTD) are radiation measuring instrument for heavy charged particles by itself, it can be used as radiation measuring instrument for neutrons, if nuclear reactions such as (n, f) or (n, α) reaction are utilized. Since the means was found, which permits to observe the tracks of heavy charged particles in a solid with an optical microscope by chemically etching the tracks to enlarge them to etch pits, various types of detectors have been developed for the purpose of measuring neutron dose. The paper is described on the materials and construction of the SSTDs for neutron dosimetry, and the sensitivity is explained with mathematical equations. The features of neutron dosimetry with SSTDs are as follows: They are compact, and scarcely disturb neutron field, thus delicate dose distribution can be known; integration measurement is possible regardless of dose rate values because of integrating type detectors; it is not influenced by β-ray or γ-ray except the case when there is high energy radiation such as causing photonuclear reactions or high dose such as degrading solids, it has pretty high sensitivity; track fading is negligible during the normal measuring time around room temperature; and the etching images of tracks are relatively clear, and various automatic counting systems can be employed. (Wakatsuki, Y.)

Quantum Correlations of Light from a Room-Temperature Mechanical Oscillator

Science.gov (United States)

Sudhir, V.; Schilling, R.; Fedorov, S. A.; Schütz, H.; Wilson, D. J.; Kippenberg, T. J.

2017-07-01

When an optical field is reflected from a compliant mirror, its intensity and phase become quantum-correlated due to radiation pressure. These correlations form a valuable resource: the mirror may be viewed as an effective Kerr medium generating squeezed states of light, or the correlations may be used to erase backaction from an interferometric measurement of the mirror's position. To date, optomechanical quantum correlations have been observed in only a handful of cryogenic experiments, owing to the challenge of distilling them from thermomechanical noise. Accessing them at room temperature, however, would significantly extend their practical impact, with applications ranging from gravitational wave detection to chip-scale accelerometry. Here, we observe broadband quantum correlations developed in an optical field due to its interaction with a room-temperature nanomechanical oscillator, taking advantage of its high-cooperativity near-field coupling to an optical microcavity. The correlations manifest as a reduction in the fluctuations of a rotated quadrature of the field, in a frequency window spanning more than an octave below mechanical resonance. This is due to coherent cancellation of the two sources of quantum noise contaminating the measured quadrature—backaction and imprecision. Supplanting the backaction force with an off-resonant test force, we demonstrate the working principle behind a quantum-enhanced "variational" force measurement.

Neutron absorbing room temperature vulcanizable silicone rubber compositions

International Nuclear Information System (INIS)

Zoch, H.L.

1979-01-01

A neutron absorbing composition is described and consists of a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide. 20 claims

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

International Nuclear Information System (INIS)

Miller, William H.; Manuel Diaz de Leon

2003-01-01

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

Energy Technology Data Exchange (ETDEWEB)

William H. Miller; Manuel Diaz de Leon

2003-04-15

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed.

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

International Nuclear Information System (INIS)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-01-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

Energy Technology Data Exchange (ETDEWEB)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-06-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

The pin detector - a simple, robust, cheap and effective nuclear radiation detector

International Nuclear Information System (INIS)

Bateman, J.E.

1984-01-01

The development of a series of radiation detectors bases on the point anode is reported. Using readily available preformed pins from a variety of electrical connectors as the anodes, a family of devices has been created with useful properties as X-ray detectors, radiation monitors and internal beta counters. A wide variety of gas fillings can be used, argon/CH 4 premix being the most convenient. The structures are robust and call for no precision alignments so keeping costs down. Performance of the devices in respect of sensitivity and pulse height resolution is comparable to that of conventional wire counters. (author)

Isotope detectors and radiation detectors for test reliability techniqui. A preliminary project

International Nuclear Information System (INIS)

Christell, R.

1977-03-01

A survey is done of small and simple components for use as detectors for ionizing radiation, as well as different methods and components producing images of radiation fields based on position sensitive detectors. The investigation has resulted in a system for detection of stones in wood. In a second project isotope excited x ray fluorescence has been used for analysis of material resulting from wear of mechanical components. A facility for analysis has been built and test analysis has been performed. Methods for continous wear control with possibility to forecast breakdowns have been investigated. (K.K.)

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

Modeling radiation damage to pixel sensors in the ATLAS detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

Effect of Gamma Radiation and temperature on storage quality of Pea (Pisum sativum L)

International Nuclear Information System (INIS)

Islam, M.S.; Hossain, M. M.; Hossain, M. A.; Alam, M. K.; Sarder, A. H.

2004-01-01

Effect of radiation, storage temperature and storage period of pea was investigated. During the entire storage period of 12 months, no major changes occurred in weight loss, insect infestation, moisture content, water activity (a w ) and protein content of the pea stored at room temperature (RT) and at 4 0 C. Reconstitution properties and tenderness after cooking were affected at room temperature storage. Both reconstitution properties and tenderness gradually decreased with the increase of storage period when pea was stored at RT. The initial reconstitution properties (94%) decreased to 77% at the end of 12 months and the initial tenderness (97%) decreased to 13% when pea was stored at room temperature. On the other hand the reconstitution properties and tenderness were found 92% and 83% respectively in pea stored at 4 0 C.(author)

Simulation of effects of direction and air flow speed on temperature distribution in the room covered by various roof materials

Energy Technology Data Exchange (ETDEWEB)

Sukanto, H., E-mail: masheher@uns.ac.id; Budiana, E. P., E-mail: budiana.e@gmail.com; Putra, B. H. H., E-mail: benedictus.hendy@gmail.com [Mechanical Engineering Department, Sebelas Maret University, Surakarta, Indonesia 57126 (Indonesia)

2016-03-29

The objective of this research is to get a comparison of the distribution of the room temperature by using three materials, namely plastic-rubber composite, clay, and asbestos. The simulation used Ansys Fluent to get the temperature distribution. There were two conditions in this simulations, first the air passing beside the room and second the air passing in front of the room. Each condition will be varied with the air speed of 1 m/s, 2 m/s, 3 m/s, 4 m/s, 5 m/s for each material used. There are three heat transfers in this simulation, namely radiation, convection, and conduction. Based on the ANSI/ ASHRAE Standard 55-2004, the results of the simulation showed that the best temperature distribution was the roof of plastic-rubber composites.

Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

International Nuclear Information System (INIS)

Franc, J.; Hoeschl, P.; Belas, E.; Grill, V.; Fauler, A.; Dambacher, M.; Procz, S.

2011-01-01

Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and Cd x Zn 1-x Te (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will

Superconducting NbN detectors for synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Semenov, Alexei; Richter, Heiko; Huebers, Heinz-Wilhelm [DLR, Instiute of Planetary Research, Berlin (Germany); Ilin, Konstantin; Siegel, Michael [Institute of Micro- and Nanoelectronic Systems, University of Karlsruhe (Germany)

2009-07-01

We present development of a special type of hot-electron bolometers that is designed to optimally detect pulsed synchrotron radiation in the terahertz frequency range. The enlarged log-spiral antenna makes it possible to sense the low-frequency part of the spectrum in coherent and non-coherent regime. The device follows the layout of a typical HEB mixer. The radiation is coupled quasioptically with the 6-mm elliptical silicon lens. The bolometer has the noise equivalent power 2 nW per square root Hz and responds to a few picoseconds long radiation pulse with the electric pulse having full width at half maximum of 160 ps. We present results obtained with this type of detector at different synchrotron facilities and discuss possible improvements of the detector performance.

The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

International Nuclear Information System (INIS)

Verbitskaya, E.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rato Mendes, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Vaitkus, J.; Da Via, C.; Wobst, E.; Zavrtanik, M.

2003-01-01

The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called 'Lazarus effect', was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal 'zigzag'-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p + and n + contacts is responsible for the 'zigzag'- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation

Radiation flaw detector for testing non-uniform surface bodies of revolution

International Nuclear Information System (INIS)

Valevich, M.I.

1984-01-01

Radiation flaw detector for testing bodies of revolution with non-uniform surface, welded joints, etc., based on spatial filtration and differentiation of ionizing radiation flux has been described. The calculation of the most important unit of flaw detector - integrators - is made. Experimental studies of the sensitivity have shown, that the radiation flaw detector can be used for rapid testing of products with the sensitivity comparable with the sensitivity of radiographic testing of steel

Applications of noble gas radiation detectors to counter-terrorism

International Nuclear Information System (INIS)

Vanier, Peter E.; Forman, Leon

2002-01-01

Radiation detectors are essential tools in the detection, analysis and disposition of potential terrorist devices containing hazardous radioactive and/or fissionable materials. For applications where stand-off distance and source shielding are limiting factors, large detectors have advantages over small ones. The ability to distinguish between Special Nuclear Materials and false-positive signals from natural or man-made benign sources is also important. Ionization chambers containing compressed noble gases, notably xenon and helium-3, can be scaled up to very large sizes, improving the solid angle for acceptance of radiation from a distant source. Gamma spectrometers using Xe have a factor of three better energy resolution than NaI scintillators, allowing better discrimination between radioisotopes. Xenon detectors can be constructed so as to have extremely low leakage currents, enabling them to operate for long periods of time on batteries or solar cells. They are not sensitive to fluctuations in ambient temperature, and are therefore suitable for deployment in outdoor locations. Position-sensitive 3He chambers have been built as large as 3000 cm2, and with spatial resolution of less than 1 mm. Combined with coded apertures made of cadmium, they can be used to create images of thermal neutron sources. The natural background of spallation neutrons from cosmic rays generates a very low count rate, so this instrument could be quite effective at identifying a man-made source, such as a spontaneous fission source (Pu) in contact with a moderator (high explosive)

Room Temperature Memory for Few Photon Polarization Qubits

Science.gov (United States)

Kupchak, Connor; Mittiga, Thomas; Jordan, Bertus; Nazami, Mehdi; Nolleke, Christian; Figueroa, Eden

2014-05-01

We have developed a room temperature quantum memory device based on Electromagnetically Induced Transparency capable of reliably storing and retrieving polarization qubits on the few photon level. Our system is realized in a vapor of 87Rb atoms utilizing a Λ-type energy level scheme. We create a dual-rail storage scheme mediated by an intense control field to allow storage and retrieval of any arbitrary polarization state. Upon retrieval, we employ a filtering system to sufficiently remove the strong pump field, and subject retrieved light states to polarization tomography. To date, our system has produced signal-to-noise ratios near unity with a memory fidelity of >80 % using coherent state qubits containing four photons on average. Our results thus demonstrate the feasibility of room temperature systems for the storage of single-photon-level photonic qubits. Such room temperature systems will be attractive for future long distance quantum communication schemes.

Materials for room temperature magnetic refrigeration

Energy Technology Data Exchange (ETDEWEB)

Rosendahl Hansen, B.

2010-07-15

Magnetic refrigeration is a cooling method, which holds the promise of being cleaner and more efficient than conventional vapor-compression cooling. Much research has been done during the last two decades on various magnetic materials for this purpose and today a number of materials are considered candidates as they fulfill many of the requirements for a magnetic refrigerant. However, no one material stands out and the field is still active with improving the known materials and in the search for a better one. Magnetic cooling is based on the magnetocaloric effect, which causes a magnetic material to change its temperature when a magnetic field is applied or removed. For room temperature cooling, one utilizes that the magnetocaloric effect peaks near magnetic phase transitions and so the materials of interest all have a critical temperature within the range of 250 - 310 K. A magnetic refrigerant should fulfill a number of criteria, among these a large magnetic entropy change, a large adiabatic temperature change, preferably little to no thermal or magnetic hysteresis and the material should have the stability required for long term use. As the temperature range required for room temperature cooling is some 40 - 50 K, the magnetic refrigerant should also be able to cover this temperature span either by exhibiting a very broad peak in magnetocaloric effect or by providing the opportunity for creating a materials series with varying transition temperatures. (Author)

Development of re-crystallized W-1.1%TiC with enhanced room-temperature ductility and radiation performance

Energy Technology Data Exchange (ETDEWEB)

Kurishita, H., E-mail: kurishi@imr.tohoku.ac.j [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Matsuo, S.; Arakawa, H. [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Sakamoto, T.; Kobayashi, S.; Nakai, K. [Department of Materials Science and Biotechnology, Ehime University, Matsuyama 790-8577 (Japan); Takida, T.; Kato, M. [A.L.M.T. Corp., Toyama 931-8543 (Japan); Kawai, M. [Institute of Material Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Yoshida, N. [Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2010-03-15

Ultra-fine grained (UFG) W-TiC compacts fabricated by powder metallurgical methods utilizing mechanical alloying (MA) are very promising for use in irradiation environments. However, the assurance of room-temperature ductility and enhancement in surface resistances to low-energy hydrogen irradiation are unsettled issues. As an approach to solution to these, microstructural modification by hot plastic working has been applied to UFG W-TiC processed by MA in a purified Ar or H{sub 2} atmosphere and hot isostatic pressing (HIP). Hot plastically worked compacts have been subjected to 3-point bend tests at room temperature and TEM microstructural examinations. It is found that the microstructural modification allows us to convert UFG W-1.1%TiC to compacts exhibiting a very high fracture strength and appreciable ductility at room temperature. The compacts of W-1.1%TiC/Ar (MA atmosphere: Ar) and W-1.1%TiC/H{sub 2} (MA atmosphere: H{sub 2}) exhibit re-crystallized structures with approximately 0.5 and 1.5 mum in grain size, respectively. It is shown that the enhancement of fracture resistance by microstructural modifications is attributed to significant strengthening of weak grain boundaries in the re-crystallized state. As a result the modified compacts exhibit superior surface resistance to low-energy deuteron irradiation.

Radiation and Temperature Effects on the APV25 Readout Chip for the CMS Tracker

CERN Document Server

Messomo, Etam Albert Noah

2002-01-01

The Compact Muon Solenoid (CMS) is one of four particle detectors designed for use at the Large Hadron Collider (LHC) currently under construction at CERN, the European Laboratory for Particle Physics in Geneva. The LHC will accelerate two counterrotating beams of protons to energies of 7 TeV and produce 109 proton-proton collisions per second at a bunch-crossing frequency of 40 MHz. These collisions occuring at the centre of CMS will generate a very hostile radiation environment. The CMS sub-detector system closest to the collision point is the highly segmented Tracker, consisting of a silicon pixel detector with 45 million channels and a silicon microstrip detector with 10 million channels. The microstrip detector will be read out by the APV25, a custom-made chip manufactured in a commercial 0.25 µm CMOS microelectronics process. Radiation and temperature studies are required to ensure that the APV25 can operate reliably in the CMS environment. The radiation effects to which the APV25 could be susceptible ...

Novel low-temperature processing of low noise SDDs with on-detector electronics

International Nuclear Information System (INIS)

Sonsky, J.; Koornneef, R.; Huizenga, J.; Hollander, R.W.; Nanver, L.K.; Scholtes, T.; Roozeboom, F.; Eijk, C.W.E. van

2004-01-01

We have developed a fabrication process (SMART700 deg. process) for monolithic integration of p-channel JFETs and silicon detectors. Processing steps of the SMART700 deg. do not exceed 700 deg. C. The integrated p-JFET has a minimum gate length of 1 μm. A relatively large width can be chosen to achieve a reasonable transconductance, while the JFET capacitance still matches the small capacitance of a detector. The feedback capacitor was also realized on-chip as a double-metal capacitor. In this paper we describe DC and noise characteristics of a silicon drift detector (SDD) with a p-JFET (W/L=100/1) and a feedback capacitor integrated in the read-out anode (smart-SDD). The device has a transconductance of 1-3 mS, a top gate capacitance of ∼140 fF and a low leakage current ( 2 at room temperature). The smart-SDD with an active area of 3.8 mm 2 has reached an energy resolution of ∼50 rms electrons at a temperature of 213 K. This relatively poor energy resolution is due to generation-recombination noise caused by defects produced by a deep n-implantation. Rapid thermal annealing (RTA) and excimer laser annealing (ELA) techniques are experimented to remove the implantation damage. The noise of p-JFETs annealed with RTA and ELA is also presented

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...