Light refraction in PbMgsub(1/3)Nbsub(2/3)Osub(3) ferroelectric with a diffuse phase transition

International Nuclear Information System (INIS)

Korshunov, O.Yu.; Markovin, P.A.; Pisarev, R.V.

1983-01-01

In PbMgsub(1/2)Nbsub(2/3)Osub(3) ferroelectric with a diffuse phase transition refractive indeX variations with temperature are studied for two wavelengths of 0.63 and 0.44 μm in the 140-600 K temperature range, and refractive index dispersion is measured at room temperature. A broad smooth peak of rate of light refraction temperation changes in the 300-310 K range that coincides with the previously observed by other authors on the temperatUre dependence of microwave dielectric permittivity. A refractive properties anomaly is also observed at 156 K that is related with another phase transition at this temperature. Mechanisms of refractive index thermal variations are analyzed and a ferroelectric contribution into light refraction that equals approximately 4x10 -2 at 140 K is found. The contribution remains up to 600 K due to polarization fluctuations. It is shown that within the frames of dispersion theory the effect of ferroelectric ordering on light refraction can be explained by changes of both frequency and effective oscillator force

Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

KAUST Repository

Zhang, Shuxia

2012-04-06

High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

KAUST Repository

Zhang, Shuxia; Wang, Lei; Chen, Yao; Wang, Dongliang; Yao, Yingbang; Ma, Yanwei

2012-01-01

High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

Electro-caloric effect in lead-free Sn doped BaTiO3 ceramics at room temperature and low applied fields

International Nuclear Information System (INIS)

Upadhyay, Sanjay Kumar; Reddy, V. Raghavendra; Bag, Pallab; Rawat, R.; Gupta, S. M.; Gupta, Ajay

2014-01-01

Structural, dielectric, ferroelectric (FE), 119 Sn Mössbauer, and specific heat measurements of polycrystalline BaTi 1–x Sn x O 3 (x = 0% to 15%) ceramics are reported. Phase purity and homogeneous phase formation with Sn doping is confirmed from x-ray diffraction and 119 Sn Mössbauer measurements. With Sn doping, the microstructure is found to change significantly. Better ferroelectric properties at room temperature, i.e., increased remnant polarization (38% more) and very low field switchability (225% less) are observed for x = 5% sample as compared to other samples and the results are explained in terms of grain size effects. With Sn doping, merging of all the phase transitions into a single one is observed for x ≥ 10% and for x = 5%, the tetragonal to orthorhombic transition temperature is found close to room temperature. As a consequence better electro-caloric effects are observed for x = 5% sample and therefore is expected to satisfy the requirements for non-toxic, low energy (field) and room temperature based applications.

High temperature phases in PZT ferroelectric films

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

2003-01-01

Roč. 293, - (2003), s. 111-118 ISSN 0015-0193 R&D Projects: GA ČR GP202/02/D078; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.406, year: 2003

Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

Science.gov (United States)

Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

2018-01-01

Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

Low-temperature synthesis and structural properties of ferroelectric K 3WO 3F 3 elpasolite

Science.gov (United States)

Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Aleksandrov, K. S.

2010-06-01

Low-temperature ferroelectric G2 polymorph of K 3WO 3F 3 has been prepared by chemical synthesis. Structural and chemical properties of the final product have been evaluated with X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Structure parameters of G2-K 3WO 3F 3 are refined by the Rietveld method from XRD data measured at room temperature (space group Cm, Z = 2, a = 8.7350(3) Å, b = 8.6808(5) Å, c = 6.1581(3) Å, β = 135.124(3) Å, V = 329.46(3) Å 3; RB = 2.47%). Partial ordering of oxygen and fluorine atoms has been found over anion positions. Mechanism of ferroelectric phase transition in A 2BMO 3F 3 oxyfluorides is discussed.

Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

Energy Technology Data Exchange (ETDEWEB)

Mimura, Takanori; Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Tokyo 102-8554 (Japan); Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-08-01

0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (P{sub r}) of 9.6 and 10.8 μC/cm{sup 2} and coercive fields (E{sub c}) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

CERN Document Server

Topolov, Vitaly

2012-01-01

The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.; Arsalan, Muhammad

2016-01-01

measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity

Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

International Nuclear Information System (INIS)

Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

2016-01-01

The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

Room-temperature ferromagnetism in Fe-based perovskite solid solution in lead-free ferroelectric Bi0.5Na0.5TiO3 materials

Science.gov (United States)

Hung, Nguyen The; Bac, Luong Huu; Trung, Nguyen Ngoc; Hoang, Nguyen The; Van Vinh, Pham; Dung, Dang Duc

2018-04-01

The integration of ferromagnetism in lead-free ferroelectric materials is important to fabricate smart materials for electronic devices. In this work, (1 - x)Bi0.5Na0.5TiO3 + xMgFeO3-δ materials (x = 0-9 mol%) were prepared through sol-gel method. X-ray diffraction characterization indicated that MgFeO3-δ materials existed as a well solid solution in lead-free ferroelectric Bi0.5Na0.5TiO3 materials. The rhombohedral structure of Bi0.5Na0.5TiO3 materials was distorted due to the random distribution of Mg and Fe cations into the host lattice. The reduced optical band gap and the induced room-temperature ferromagnetism were due to the spin splitting of transition metal substitution at the B-site of perovskite Bi0.5Na0.5TiO3 and the modification by A-site co-substitution. This work elucidates the role of secondary phase as solid solution in Bi0.5Na0.5TiO3 material for development of lead-free multiferroelectric materials.

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

Science.gov (United States)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Two-dimensional ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

2000-03-31

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

Prospects and applications near ferroelectric quantum phase transitions: a key issues review

Science.gov (United States)

Chandra, P.; Lonzarich, G. G.; Rowley, S. E.; Scott, J. F.

2017-11-01

The emergence of complex and fascinating states of quantum matter in the neighborhood of zero temperature phase transitions suggests that such quantum phenomena should be studied in a variety of settings. Advanced technologies of the future may be fabricated from materials where the cooperative behavior of charge, spin and current can be manipulated at cryogenic temperatures. The progagating lattice dynamics of displacive ferroelectrics make them appealing for the study of quantum critical phenomena that is characterized by both space- and time-dependent quantities. In this key issues article we aim to provide a self-contained overview of ferroelectrics near quantum phase transitions. Unlike most magnetic cases, the ferroelectric quantum critical point can be tuned experimentally to reside at, above or below its upper critical dimension; this feature allows for detailed interplay between experiment and theory using both scaling and self-consistent field models. Empirically the sensitivity of the ferroelectric T c’s to external and to chemical pressure gives practical access to a broad range of temperature behavior over several hundreds of Kelvin. Additional degrees of freedom like charge and spin can be added and characterized systematically. Satellite memories, electrocaloric cooling and low-loss phased-array radar are among possible applications of low-temperature ferroelectrics. We end with open questions for future research that include textured polarization states and unusual forms of superconductivity that remain to be understood theoretically.

Room temperature multiferroic properties of Pb(Fe{sub 0.5}Nb{sub 0.5})O{sub 3}–Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4} composites

Energy Technology Data Exchange (ETDEWEB)

Pradhan, Dhiren K., E-mail: dhirenkumarp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Katiyar, Ram S., E-mail: dhirenkumarp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00936 (United States); Puli, Venkata S. [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Narayan Tripathy, Satya; Pradhan, Dillip K. [Department of Physics, National Institute of Technology, Rourkela 769008 (India); Scott, J. F. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00936 (United States); Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)

2013-12-21

We report the crystal structure, magnetic, ferroelectric, dielectric, and magneto-dielectric properties of [Pb(Fe{sub 0.5}Nb{sub 0.5})O{sub 3}]{sub (1−x)}[Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4}]{sub x}: (x = 0.1, 0.2, 0.3, and 0.4) composites. Rietveld refinement results of X-ray diffraction patterns confirm the formation of these composites for all x values. All the composites show well-saturated ferroelectric and ferromagnetic hysteresis (multiferroic-composite behavior) at room temperature. With increase in Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4} (CZFO) content an increase in saturation magnetization, and decrease in saturation polarization, remanent polarization, and dielectric constant are observed. The ferroelectric phase transition temperature increases with increase in CZFO content. All of the compositions undergo second-order ferroelectric phase transitions, which can be explained by Landau-Devonshire theory. The recoverable energy density (∼0.20 to 0.04 J/cm{sup 3}) and charge-curve energy density (∼0.84 to 0.11 J/cm{sup 3}) decrease with increase in the CZFO content. The room-temperature magneto-dielectric measurements provide direct evidence of magneto-electric coupling via strain at room temperature.

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

Science.gov (United States)

Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

2017-07-01

4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

Science.gov (United States)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

ENDOR-investigations in the environment of the ferroelectric phase transition temperature of γ-irradiated TSCC

International Nuclear Information System (INIS)

Welter, M.

1983-01-01

The structure of the CH 3 NHCH 2 COOH radical in the paraelectric phase and during the transition into the ferroelectric phase has been determined by means of ENDOR measurements. The carboxyl group of the radical is a sensitive probe for the study of crystal field changes. Structural differences of the radical between the paraelectric and the ferroelectric phase were attributed to structural changes within the nearest environment

Phase transformations im smart materials

International Nuclear Information System (INIS)

Newnham, R.E.

1998-01-01

One of the qualities that distinguishes living systems from inanimate matter is the ability to adapt to changes in the environment. Smart materials have the ability to perform both sensing and actuating functions and are, therefore, capable of imitating this rudimentary aspect of life. Four of the most widely used smart materials are piezoelectric Pb(Zr, Ti)O 3 , electrostrictive Pb(Mg, Nb)O 3 , magnetostrictive (Tb, Dy)Fe 2 and the shape-memory alloy NiTi. All four are ferroic with active domain walls and two phase transformations, which help to tune the properties of these actuator materials. Pb(Zr, Ti)O 3 is a ferroelectric ceramic which is cubic at high temperature and becomes ferroelectric on cooling through the Curie temperature. At room temperature, it is poised on a rhombohedral-tetragonal phase boundary which enhances the piezoelectric coefficients. Terfenol, (Tb, Dy)Fe 2 , is also cubic at high temperature and then becomes magnetic on cooling through its Curie temperature. At room temperature, it too is poised on a rhombohedral-tetragonal transition which enhances its magnetostriction coefficients. Pb(Mg, Nb)O 3 and nitinol (NiTi) are also cubic at high temperatures and on annealing transform to a partially ordered state. On further cooling, Pb(Mg, Nb)O 3 passes through a diffuse phase transformation at room temperature where it exhibits very large dielectric and electrostrictive coefficients. Just below room temperature, it transforms to a ferroelectric rhombohedral phase. The partially ordered shape-memory alloy NiTi undergoes an austenitic (cubic) to martensitic (mono-clinic) phase change just above room temperature. It is easily deformed in the martensitic state but recovers its original shape when reheated to austenite

Preparation and electromagnetic properties of low-temperature sintered ferroelectric-ferrite composite ceramics

International Nuclear Information System (INIS)

Yue Zhenxing; Chen Shaofeng; Qi Xiwei; Gui Zhilun; Li Longtu

2004-01-01

For the purpose of multilayer chip EMI filters, the new ferroelectric-ferrite composite ceramics were prepared by mixing PMZNT relaxor ferroelectric powder with composition of 0.85Pb(Mg 1/3 Nb 2/3 )O 3 -0.1Pb(Ni 1/3 Nb 2/3 )O 3 -0.05PbTiO 3 and NiCuZn ferrite powder with composition of (Ni 0.20 Cu 0.20 Zn 0.60 )O(Fe 2 O 3 ) 0.97 at low sintering temperatures. A small amount of Bi 2 O 3 was added to low sintering temperature. Consequently, the dense composite ceramics were obtained at relative low sintering temperatures, which were lower than 940 deg. C. The X-ray diffractometer (XRD) identifications showed that the sintered ceramics retained the presence of distinct ferroelectric and ferrite phases. The sintering studies and scanning electron microscope (SEM) observations revealed that the co-existed two phases affect the sintering behavior and grain growth of components. The electromagnetic properties, such as dielectric constant and initial permeability, change continuously between those of two components. Thus, the low-temperature sintered ferroelectric-ferrite composite ceramics with tunable electromagnetic properties were prepared by adjusting the relative content of two components. These materials can be used for multilayer chip EMI filters with various properties

Room temperature multiferroic properties of (Fe{sub x}, Sr{sub 1−x})TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyoung-Tae; Kim, Cheolbok; Fang, Sheng-Po; Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-09-08

This letter reports the structural, dielectric, ferroelectric, and magnetic properties of Fe substituted SrTiO{sub 3} thin films in room temperature. The structural data obtained from x-ray diffraction indicates that (Fe{sub x},Sr{sub 1−x})TiO{sub 3}, the so called FST, transforms from pseudocubic to tetragonal structures with increase of the Fe content in SrTiO{sub 3} thin films, featuring the ferroelectricity, while vibrating sample magnetometer measurements show magnetic hysteresis loops for the samples with low iron contents indicating their ferromagnetism. The characterized ferroelectricity and ferromagnetism confirms strong multiferroitism of the single phase FST thin films in room temperature. Also, an FST thin film metal-insulator-metal multiferroic capacitor has been fabricated and characterized in microwave frequencies between 10 MHz and 5 GHz. A capacitor based on Fe{sub 0.1}Sr{sub 0.9}TiO{sub 3} with a thickness of 260 nm shows a high electric tunability of 18.6% at 10 V and a maximum magnetodielectric value of 1.37% at 0.4 mT with a loss tangent of 0.021 at 1 GHz. This high tuning and low loss makes this material as a good candidate for frequency agile microwave devices such as tunable filters, phase shifters, and antennas.

Flexoelectricity: strain gradient effects in ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

2007-12-15

Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

Energy Technology Data Exchange (ETDEWEB)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing (Penn); (Xian Jiaotong); (CIW); (Simon); (TRS Techn); (Wollongong)

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals.

Science.gov (United States)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R; Chen, Long-Qing

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

Self-Assembled Layered Supercell Structure of Bi2AlMnO6 with Strong Room-Temperature Multiferroic Properties.

Energy Technology Data Exchange (ETDEWEB)

Li, Leigang; Boullay, Philippe; Lu, Ping; Perez, Olivier; Steciuk, Gwladys; Wang, Xuejing; Jian, Jie; Huang, Jijie; Gao, Xingyao; Zhang, Wenrui; Zhang, Xinghang; Wang, Haiyan

2017-02-01

Room-temperature (RT) multiferroics, possessing ferroelectricity and ferromagnetism simultaneously at RT, hold great promise in miniaturized devices including sensors, actuators, transducers, and multi-state memories. In this work, we report a novel 2D layered RT multiferroic system with self-assembled layered supercell structure consisting of two mismatch-layered sub-lattices of [Bi₃O_3+δ] and [MO₂]_1.84 (M=Al/Mn, simply named as BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made of a three-layer-thick Bi-O slab and a one-layer-thick Al/Mn-O octahedra slab along the out-of-plane direction. Strong room-temperature multiferroic responses, e.g., ferromagnetic and ferroelectric properties, have been demonstrated and attributed to the highly anisotropic 2D nature of the non-ferromagnetic and ferromagnetic sublattices which are highly mismatched. The work demonstrates an alternative design approach for new 2D layered oxide materials that hold promises as single-phase multiferroics, 2D oxides with tunable bandgaps, and beyond.

A phase field approach for the fully coupled thermo-electro-mechanical dynamics of nanoscale ferroelectric actuators

Science.gov (United States)

Wang, Dan; Du, Haoyuan; Wang, Linxiang; Melnik, Roderick

2018-05-01

The fully coupled thermo-electro-mechanical properties of nanoscale ferroelectric actuators are investigated by a phase field model. Firstly, the thermal effect is incorporated into the commonly-used phase field model for ferroelectric materials in a thermodynamic consistent way and the governing equation for the temperature field is derived. Afterwards, the modified model is numerically implemented to study a selected prototype of the ferroelectric actuators, where strain associated with electric field-induced non-180° domain switching is employed. The temperature variation and energy flow in the actuation process are presented, which enhances our understanding of the working mechanism of the actuators. Furthermore, the influences of the input voltage frequency and the thermal boundary condition on the temperature variation are demonstrated and carefully discussed in the context of thermal management for real applications.

Modification of phase transitions in swift heavy ion irradiated and MMA-grafted ferroelectric fluoro-polymers

International Nuclear Information System (INIS)

Petersohn, E.; Betz, N.; Le Moel, A.

1994-01-01

Ferroelectric polyvinylidene fluoride (β) and copolymers of vinylidene fluoride trifluoroethylene (P(VDF/TrFE)) films were irradiated with swift heavy ions and post irradiation grafted with methyl methacrylate (MMA). We have studied the influence of irradiation parameters such as the ion fluence, the type of ion and the electronic stopping power, on the melting and crystallization temperatures and the ferroelectric-paraelectric phase transitions, by differential scanning calorimetry (DSC) and dielectric measurements. The relation between the shift in the transition temperatures and the ion fluence is described by a single term equation. Ion track grafting with MMA affects the ferroelectric-paraelectric phase transitions in P(VDF/TrFE) and leads to a strong amorphization of the polymer films. The grafting in β PVDF occurs mainly on the surface of the samples and no change in the transition temperatures is observed. (authors). 12 refs., 6 figs., 2 tabs

Electric-field-induced paraelectric to ferroelectric phase transformation in prototypical polycrystalline BaTiO3

International Nuclear Information System (INIS)

Wang, Zhiyang; Hinterstein, Manuel; Daniels, John E.; Webber, Kyle G.; Hudspeth, Jessica M.

2014-01-01

An electric-field-induced paraelectric cubic to ferroelectric tetragonal phase transformation has been directly observed in prototypical polycrystalline BaTiO 3 at temperatures above the Curie point (T C ) using in situ high-energy synchrotron X-ray diffraction. The transformation persisted to a maximum temperature of 4 °C above T C . The nature of the observed field-induced transformation and the resulting development of domain texture within the induced phase were dependent on the proximity to the transition temperature, corresponding well to previous macroscopic measurements. The transition electric field increased with increasing temperature above T C , while the magnitude of the resultant tetragonal domain texture at the maximum electric field (4 kV mm −1 ) decreased at higher temperatures. These results provide insights into the phase transformation behavior of a prototypical ferroelectric and have important implications for the development of future large-strain phase-change actuator materials.

Role of oxygen disorder in the ferroelectric phase transitions for various materials

International Nuclear Information System (INIS)

Pasciak, Marek; Goossens, Darren J.; Welberry, Richard T.

2009-01-01

Full text: The nature of ferroelectric phase transitions in many materials have been questioned for many years. Whereas some methods provide definitive evidence of mode softening, other methods, such as local structure probes, indicate the existence of disorder in the paraelectric phase [1]. It is now widely accepted, that the ferroelectric phase transition usually has two components - soft-mode displacive and order-disorder. The latter leads inevitably to some form of pretransitional clusters in the paraelectric phase [2]. In relaxor ferroelectrics, in which disorder drives the transformation, such polar clusters can exist over a wide range of temperatures. Diffuse scattering is a powerful tool for studying such disorder and also for studying short-range order correlations in atomic displacements [3]. In this work we concentrate on the role of oxygens in various materials. By different means of molecular simulations we build models in which the oxygens constitute a framework for short range order correlations. This leads to a discussion of the differences between x-ray and neutron diffuse scattering patterns that may arise due to the disorder of oxygens.

Study of glass-nanocomposite and glass-ceramic containing ferroelectric phase

Energy Technology Data Exchange (ETDEWEB)

Abdel-Khalek, E.K., E-mail: Eid_khalaf0@yahoo.com [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt); Mohamed, E.A. [Department of Physics, Faculty of Science (Girl' s Branch), Al Azhar University, Nasr City, Cairo (Egypt); Salem, Shaaban M.; Ebrahim, F.M.; Kashif, I. [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Glass nanocomposites was synthesized. Black-Right-Pointing-Pointer Glass nanocomposites exhibit both optical transmission bands at 598 and 660 nm and broad dielectric anomalies. Black-Right-Pointing-Pointer The ferroelectricity in pure single-phase oxide glass has not yet been discovered. - Abstract: Transparent glass nanocomposite in the pseudo binary system (100 - x) Li{sub 2}B{sub 4}O{sub 7}-xBaTiO{sub 3} with x = 0 and 60 (in mol%) were prepared. Amorphous and glassy characteristics of the as-prepared samples were established via X-ray powder diffraction (XRD) and differential scanning calorimetry (DSC) respectively. The precipitated BaTiO{sub 3} nanocrystal phase embedded in the glass sample at x = 60 mol% was identified by transmission electron microscopic (TEM). The optical transmission bands at 598 and 660 nm were assigned to Ti{sup 3+} ions in tetragonal distorted octahedral sites. The precipitated Li{sub 2}B{sub 4}O{sub 7}, BaTi(BO{sub 3}){sub 2} and BaTiO{sub 3} nanocrystallites phases with heat-treatment at 923 K for 6 h (HT923) in glass-ceramic were identified by XRD, TEM and infrared absorption spectroscopy. The as-prepared at x = 60 mol% and the HT923 samples exhibit broad dielectric anomalies in the vicinity of the ferroelectric-to-paraelectric transition temperature. The results demonstrate that the method presented may be an effective way to fabricate ferroelectric host and development of multifunctional ferroelectrics.

Temperature dependence of high field electromechanical coupling in ferroelectric ceramics

Energy Technology Data Exchange (ETDEWEB)

Weaver, P M; Cain, M G; Stewart, M, E-mail: paul.weaver@npl.co.u [National Physical Laboratory, Hampton Road, Teddington, Middlesex, TW11 0LW (United Kingdom)

2010-04-28

A study of the temperature dependence of the electromechanical response of ferroelectric lead zirconate titanate (PZT) ceramics at high electric fields (up to 1.3 kV mm{sup -1}) is reported. Simultaneous measurements were performed of strain, electric field and polarization to form a complete response map from room temperature up to 200 {sup 0}C. An electrostrictive model is shown to provide an accurate description of the electromechanical response to high levels of induced polarization and electric field. This provides a method for decoupling strain contributions from thermal expansion and polarization changes. Direct measurements of electrostriction and thermal expansion, above and below the Curie temperature, are reported. Electrostriction coefficients are shown to be temperature dependent in these ceramic materials, with different values above and below the Curie temperature.

Temperature dependence of electronic transport property in ferroelectric polymer films

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

2014-10-15

Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed

2016-09-05

In this paper, a frequency output temperature sensor based on a 4% Niobium doped 20/80 Zr/Ti Lead Zirconate Titanate (PNZT) capacitor is proposed. The sensor capacitance vs temperature and capacitance vs voltage characteristics are experimentally measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity. The measured sensor characteristics show less than ∼0.7°C deviation from the ideal linear response. A Wien bridge oscillator based temperature sensor is demonstrated based on the PNZT capacitors. Mathematical analysis for the effect of the op-amp finite unity-gain frequency on the sensor circuit oscillation frequency is provided. The experimentally realized frequency output temperature sensor shows -17.6% relative frequency change for a temperature change from 10°C to 100°C. The proposed capacitive temperature sensor can be used in low-power smart sensor nodes without the need for extensive calibration. © 2015 IEEE.

Characterization, phase change and conductivity crossover of new luminescent ferroelectric Mn (II) organic-inorganic hybrid

Energy Technology Data Exchange (ETDEWEB)

Mostafa, Mohga F., E-mail: Mohga40@yahoo.com; El Dean, Thana Sh., E-mail: th_sh2000@yahoo.com; Tammam, Ahmed K., E-mail: physicsoman@yahoo.com

2016-09-01

Synthesis and characterization of new luminescent ferroelectric [(CH{sub 3})(C{sub 6}H{sub 5}){sub 3}P]{sub 2}MnBr{sub 4} organic-inorganic hybrid (OIH) are reported. Powder x-ray diffraction showed the following phases: {sup P2/m} {sup (280 K)} Phase (IV) {sup P21} {sup (298 K)} Phase (III) {sup Pna21} {sup (350 K)} Phase (II) {sup Pnma} {sup (370 K)} Phase (I). Room temperature lattice parameters are a = 9.6233 (Å), b = 12.5653 (Å) c = 16.4503 (Å) and β = 105.6° (T = 298 K). UV-VIS and Ac magnetic susceptibility confirm tetrahedral symmetry of [MnBr{sub 4}]{sup 2−}. DSC and dielectric measurements showed four phase transitions at T{sub 4peak} = 279.1 ± 1 K (ΔS = 1.03 J/mol K), T{sub 3peak} = 300.1 ± 2 K (ΔS = 2.33 J/mol K), T{sub 2peakt} = 353.2 ± 3 K (ΔS = 2.68 J/mol K) and T{sub 1peak} = 379.1 ± 3 K (ΔS = 2.43 J/mol K). Calculated lattice potential energy values vary from 827 (kJ/mol) at 280 K to (797 kJ/mol) at 370 K. Ac conductivity measurements (220 < T(K) < 400) and (0.081 < f (kHz) < 30) are presented. It is ferroelectric with Curie temperature T{sub c} = 309 K. Hybrid is semiconductor in the temperature range 309 ± 14 K, where conductivity follows Jonscher’s universal dielectric response otherwise it is an insulator where crossover to super-linear power law prevails. Comparison to the corresponding chloride is discussed. - Graphical abstract: Plot of real part of permittivity [ln(ε′)] versus temperature (K). - Highlights: • Conductivity crossover from SlPL to UDR is confirmed. • Change from semiconductor to insulator. • Structural phase transformation.

Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

International Nuclear Information System (INIS)

Kumari, Mukesh; Prakash, Chandra; Chatterjee, Ratnamala

2017-01-01

In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi 0.5 Na 0.5 TiO 3 )–0.03(K 0.47 Na 0.47 Li 0.06 Nb 0.74 Sb 0.06 Ta 0.2 O 3 ) and magnetostrictive CZFMO (Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO) , with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

Why is the electrocaloric effect so small in ferroelectrics?

Directory of Open Access Journals (Sweden)

G. G. Guzmán-Verri

2016-06-01

Full Text Available Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

Designing switchable near room-temperature multiferroics via the discovery of a novel magnetoelectric coupling

Science.gov (United States)

Feng, J. S.; Xu, Ke; Bellaiche, Laurent; Xiang, H. J.

2018-05-01

Magnetoelectric (ME) coupling is the key ingredient for realizing the cross-control of magnetism and ferroelectricity in multiferroics. However, multiferroics are not only rare, especially at room-temperature, in nature but also the overwhelming majority of known multiferroics do not exhibit highly-desired switching of the direction of magnetization when the polarization is reversed by an electric field. Here, we report group theory analysis and ab initio calculations demonstrating, and revealing the origin of, the existence of a novel form of ME coupling term in a specific class of materials that does allow such switching. This term naturally explains the previously observed electric field control of magnetism in the first known multiferroics, i.e., the Ni–X boracite family. It is also presently used to design a switchable near room-temperature multiferroic (namely, LaSrMnOsO6 perovskite) having rather large ferroelectric polarization and spontaneous magnetization, as well as strong ME coupling.

Synthesis and ferroelectric properties of rare earth compounds with tungsten bronze-type structure

Energy Technology Data Exchange (ETDEWEB)

Bouziane, M., E-mail: bouzianemeryem@yahoo.fr [Laboratoire de Chimie du Solide Appliquee, Faculte des Sciences, Avenue Ibn Batouta, BP 1014, Rabat (Morocco); Taibi, M. [Laboratoire de Physico-Chimie des Materiaux, LAF 502, Ecole Normale Superieure, BP 5118, Rabat (Morocco); Boukhari, A. [Laboratoire de Chimie du Solide Appliquee, Faculte des Sciences, Avenue Ibn Batouta, BP 1014, Rabat (Morocco)

2011-10-03

Highlights: {center_dot} Polycrystalline materials with the tungsten bronze-type structure have been synthesized and characterized. {center_dot} Effect of the incorporation of rare earth ions and paramagnetic cations (Fe{sup 3+}) into a matrix ferroelectrically active was studied. {center_dot} Ferroelectric transition is pronounced by a large thermal hysteresis during the heating and cooling cycles. {center_dot} Phase transitions around T{sub c} were confirmed by differential scanning calorimetry (DSC) measurements. - Abstract: Polycrystalline materials with a general formula Pb{sub 2}Na{sub 0.8}R{sub 0.2}Nb{sub 4.8}Fe{sub 0.2}O{sub 15} (R = Dy, Eu, Sm, Nd, La) have been synthesized, in air by a high temperature solid state reaction method. X-ray diffraction study, at room temperature, revealed that they crystallize in the tungsten bronze-type structure. Dielectric properties were performed, in the temperature range 25-500 deg. C, at three different frequencies 10, 100 and 1000 kHz. The ferroelectric transition is pronounced by a large thermal hysteresis during the heating and cooling cycles. The determined Curie temperature values T{sub c} were discussed as a function of rare earth size. Phase transitions around T{sub c} for the investigated compounds were confirmed by differential scanning calorimetry (DSC) measurements.

A comparative study of the Aurivillius phase ferroelectrics CaBi 4Ti 4O 15 and BaBi 4Ti 4O 15

Science.gov (United States)

Tellier, J.; Boullay, Ph.; Manier, M.; Mercurio, D.

2004-06-01

The room temperature structures of the four-layer Aurivillius phase ferroelectrics CaBi 4Ti 4O 15 and BaBi 4Ti 4O 15 are determined by means of single crystal X-ray diffraction. Regarding the CaBi 4Ti 4O 15 phase, in agreement with the tolerance factor, a significant deformation of the perovskite blocks is observed. The rotation system of the octahedra is typical from even layer Aurivillius phases and leads to the use of the space group A2 1am. For the BaBi 4Ti 4O 15 phase, only a weak variation with respect to the F2 mm space group can be suggested from single crystal X-ray diffraction. A significant presence of Ba atoms in the [ M2O 2] slabs is confirmed in agreement with the previous works but specific Ba 2+ and Bi 3+ sites have to be considered due to the large difference in bounding requirement of these cations. Possible origins for the ferroelectric relaxor behavior of the Ba-based compound are discussed in view of the presented structural analyses.

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

KAUST Repository

Yin, Y. W.

2015-03-03

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

Raman scattering study of the ferroelectric phase transition in BaT i2O5

Science.gov (United States)

Tsukada, Shinya; Fujii, Yasuhiro; Yoneda, Yasuhiro; Moriwake, Hiroki; Konishi, Ayako; Akishige, Yukikuni

2018-02-01

Uniaxial ferroelectric BaT i2O5 with a Curie temperature TC of 743 K was investigated to clarify its paraelectric-ferroelectric phase-transition behavior. The mechanism is discussed on the basis of the structure from short to long ranges determined by synchrotron x-ray diffraction and the lattice dynamics probed by Raman spectroscopy. BaT i2O5 is regarded as a homogeneous system, and the lattice dynamics can be interpreted by the selection rules and tensor properties of the homogeneous structure. Angle-resolved polarized Raman spectroscopy clearly shows that an A -mode-type overdamped phonon plays the key role in the phase transition. Using a combination of experimental results and first-principles calculations, we explain the phase transition as follows: In one of three Ti O6 octahedral units, Ti vibrates along the b axis opposite an oxygen octahedral unit with large damping in the paraelectric phase, whereas this vibration is frozen in the ferroelectric phase, leading to a change in the space group from nonpolar C 2 /m to polar C 2 .

Phase coexistence and electric-field control of toroidal order in oxide superlattices.

Science.gov (United States)

Damodaran, A R; Clarkson, J D; Hong, Z; Liu, H; Yadav, A K; Nelson, C T; Hsu, S-L; McCarter, M R; Park, K-D; Kravtsov, V; Farhan, A; Dong, Y; Cai, Z; Zhou, H; Aguado-Puente, P; García-Fernández, P; Íñiguez, J; Junquera, J; Scholl, A; Raschke, M B; Chen, L-Q; Fong, D D; Ramesh, R; Martin, L W

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

International Nuclear Information System (INIS)

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.

2017-01-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Here, our findings suggest new cross-coupled functionalities.

Stress-induced phase transformation and room temperature aging in Ti-Nb-Fe alloys

Energy Technology Data Exchange (ETDEWEB)

Cai, S.; Schaffer, J.E. [Fort Wayne Metals Research Products Corp, 9609 Ardmore Ave., Fort Wayne, IN 46809 (United States); Ren, Y. [Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439 (United States)

2017-01-05

Room temperature deformation behavior of Ti-17Nb-1Fe and Ti-17Nb-2Fe alloys was studied by synchrotron X-ray diffraction and tensile testing. It was found that, after proper heat treatment, both alloys were able to recover a deformation strain of above 3.5% due to the Stress-induced Martensite (SIM) phase transformation. Higher Fe content increased the beta phase stability and onset stress for SIM transformation. A strong {110}{sub β} texture was produced in Ti-17Nb-2Fe compared to the {210}{sub β} texture that was observed in Ti-17Nb-1Fe. Room temperature aging was observed in both alloys, where the formation of the omega phase increased the yield strength (also SIM onset stress), and decreased the ductility and strain recovery. Other metastable beta Ti alloys may show a similar aging response and this should draw the attention of materials design engineers.

Large low field room temperature magneto-dielectric response from (Sr_0_._5Ba_0_._5)Nb_2O_6/Co(Cr_0_._4Fe_1_._6)O_4 bulk 3-0 composites

International Nuclear Information System (INIS)

Rathore, Satyapal Singh; Vitta, Satish

2016-01-01

Highlights: • The essential highlights of this work are;. • Bulk composite with varying amounts of relaxor and ferromagnetic phases has been synthesized by simple steps. • Processing yields an optimal structure with 30% ferromagnetic phase to couple the two ferroic orders. • Magneto dielectric constant shows large changes, 3.2%, at room temperature in moderate magnetic fields. • Large changes in dielectric constant are due to configurational arrangement of the two phases. - Abstract: Bulk magneto-dielectric composites with a 3-0 configuration comprised of ferroelectric-magnetostrictive phases have been synthesized using (Sr_0_._5Ba_0_._5)Nb_2O_6–Co(Cr_0_._4Fe_1_._6)O_4 as the two constituents, respectively. The ferroelectric phase made by a dual stage sintering process has a uniform grain size of 15 μm while the magnetostrictive phase has a grain size of 2–3 μm. Composites synthesized by conventional solid state processing using these two constituents exhibit large magneto-dielectric coupling at room temperature which increases with increasing magnetic field. The composite with 30% magnetostrictive phase distributed uniformly in the ferroelectric phase has the most desirable microstructure and exhibits a large coupling with 3.2% change in the dielectric constant at 1 kHz and 8 kOe magnetic field. This change in dielectric constant was found to be a maximum with respect to variation of the fraction of magnetostrictive phase, indicating that 30% is the optimal value to realize large coupling between the two phases. The decrease in magneto-dielectric constant upon application of an external magnetic field is possibly due to the inherent magnetoresistance of the magnetic component. The resistivity of the magnetic component decreases in an external magnetic field leading to the formation of 3D percolating conducting paths. This causes the coupling to decrease in composites with >30% magnetostrictive phase.

Phase coexistence in ferroelectric solid solutions: Formation of monoclinic phase with enhanced piezoelectricity

Directory of Open Access Journals (Sweden)

Xiaoyan Lu

2016-10-01

Full Text Available Phase morphology and corresponding piezoelectricity in ferroelectric solid solutions were studied by using a phenomenological theory with the consideration of phase coexistence. Results have shown that phases with similar energy potentials can coexist, thus induce interfacial stresses which lead to the formation of adaptive monoclinic phases. A new tetragonal-like monoclinic to rhombohedral-like monoclinic phase transition was predicted in a shear stress state. Enhanced piezoelectricity can be achieved by manipulating the stress state close to a critical stress field. Phase coexistence is universal in ferroelectric solid solutions and may provide a way to optimize ultra-fine structures and proper stress states to achieve ultrahigh piezoelectricity.

Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

Energy Technology Data Exchange (ETDEWEB)

Kumari, Mukesh [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India); Prakash, Chandra [Solid State Physics Laboratory Timarpur, Delhi-110054 India (India); Chatterjee, Ratnamala, E-mail: rmala@physics.iitd.ac.in [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India)

2017-05-01

In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi{sub 0.5}Na{sub 0.5}TiO{sub 3})–0.03(K{sub 0.47}Na{sub 0.47}Li{sub 0.06}Nb{sub 0.74}Sb{sub 0.06}Ta{sub 0.2}O{sub 3}) and magnetostrictive CZFMO (Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4}) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO){sub ,} with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

Effect of smectic A temperature width on the soft mode in ferroelectric liquid crystals

Science.gov (United States)

Choudhary, A.; Kaur, S.; Prakash, J.; Sreenivas, K.; Bawa, S. S.; Biradar, A. M.

2008-08-01

The behavior of soft mode range with respect to the temperature width of smectic A (Sm A) phase has been studied in four different ferroelectric liquid crystal (FLC) materials in the frequency range 10Hz-10MHz. The studies have been carried out in a planarly well aligned cells at different temperatures and different bias fields in Sm C* and Sm A phases. Dielectric studies of these FLCs near Sm C*-Sm A phase transition show that the temperature range of soft mode relaxation frequency phenomenon varies with the temperature width of Sm A phase. The dependence of tilt angle on temperature shows the nature of the order of transition at Sm C*-Sm A phase. The coupling between order parameters of Sm C* and Sm A phase influences the soft mode and phase transition in Sm C* and Sm A phases.

A phase transition close to room temperature in BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kreisel, J; Jadhav, P; Chaix-Pluchery, O [Laboratoire des Materiaux et du Genie Physique, Grenoble INP, CNRS, Minatec, 3, parvis Louis Neel, 38016 Grenoble (France); Varela, M [Departamento Fisica Aplicada i Optica, Universitat de Barcelona, Carrer MartI i Franques 1. 08028 Campus UAB, Bellaterra 08193 (Spain); Dix, N; Sanchez, F; Fontcuberta, J, E-mail: jens.kreisel@grenoble-inp.fr [Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193 (Spain)

2011-08-31

BiFeO{sub 3} (BFO) multiferroic oxide has a complex phase diagram that can be mapped by using appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, display a reversible temperature-induced phase transition at about 100 deg. C, and thus close to room temperature. (fast track communication)

Room-temperature solid phase ionic liquid (RTSPIL) coated Ω-transaminases: Development and application in organic solvents

DEFF Research Database (Denmark)

Grabner, B.; Nazario, M. A.; Gundersen, M. T.

2018-01-01

ω-Transaminases ATA-40, ATA-47 and ATA-82P were coated with room-temperature solid phase ionic liquids (RTSPILs) by means of three methods, melt coating, precipitation coating, and co‐lyophilization, and showed increased stability in all of the five tested organic solvents. Co‐lyophilization and ......ω-Transaminases ATA-40, ATA-47 and ATA-82P were coated with room-temperature solid phase ionic liquids (RTSPILs) by means of three methods, melt coating, precipitation coating, and co‐lyophilization, and showed increased stability in all of the five tested organic solvents. Co...

Coexistence of weak ferromagnetism and ferroelectricity in the high pressure LiNbO3-type phase of FeTiO3.

Science.gov (United States)

Varga, T; Kumar, A; Vlahos, E; Denev, S; Park, M; Hong, S; Sanehira, T; Wang, Y; Fennie, C J; Streiffer, S K; Ke, X; Schiffer, P; Gopalan, V; Mitchell, J F

2009-07-24

We report the magnetic and electrical characteristics of polycrystalline FeTiO_{3} synthesized at high pressure that is isostructural with acentric LiNbO_{3} (LBO). Piezoresponse force microscopy, optical second harmonic generation, and magnetometry demonstrate ferroelectricity at and below room temperature and weak ferromagnetism below approximately 120 K. These results validate symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LBO structure.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Science.gov (United States)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Ferroelectric and magnetic properties in high-pressure synthesized BiFeO3 compound

International Nuclear Information System (INIS)

Zhai, L.; Shi, Y.G.; Gao, J.L.; Tang, S.L.; Du, Y.W.

2011-01-01

Highlights: → A high-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing method. → The sample showed weak ferromagnetic at room temperature, which could be attributed to the lattice distortion induced by the high-pressure annealing. → Irregular domains were observed on the surface of the sample by piezoresponse force microscopy, and a typical hysteresis loop was obtained. - Abstract: High-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing. Measurements of crystal structure, magnetic, and ferroelectric properties were made on the sample. It was found that the sample was almost single phase with a distorted R3c structure. The results of the X-ray photoelectron spectra demonstrate that the oxidation state of Fe in the sample is Fe 3+ . The room-temperature field dependence of magnetization for BiFeO 3 exhibits a hysteretic behavior. The observed weak ferromagnetism could be ascribed to the lattice distortion induced by the high-pressure annealing. In addition, the local ferroelectric performance of the sample was studied by piezoresponse force microscopy.

Evolution of phase transformation behavior and dielectric temperature stability of BaTiO3–Bi(Zn0.5Zr0.5)O3 ceramics system

International Nuclear Information System (INIS)

Wang, Yiliang; Chen, Xiuli; Zhou, Huanfu; Fang, Liang; Liu, Laijun; Zhang, Hui

2013-01-01

Highlights: ► (1 − x)BaTiO 3 –xBi(Zn 0.5 Zr 0.5 )O 3 ceramics were synthesized. ► A systematic structural change was observed near x = 0.07 and x = 0.4. ► A change from a normal ferroelectric behavior to diffusive and dispersive relaxor-like characteristic was also observed. ► (1 − x)BT–xBZZ ceramics show good dielectric temperature stability over a wide temperature range. - Abstract: (1 − x)BaTiO 3 –xBi(Zn 0.5 Zr 0.5 )O 3 [(1 − x)BT–xBZZ, 0.01 ⩽ x ⩽ 0.6] ceramics were synthesized by solid-state reaction technique. Based on the X-ray diffraction data analysis, a systematic structure change from the ferroelectric tetragonal phase to pseudocubic phase and the pseudocubic phase to orthorhombic phase was observed near x = 0.07 and x = 0.4 at room temperature, respectively. Dielectric measurements show a dielectric anomaly, over the temperature range from 50 to 200 °C for the compositions with 0.03 ⩽ x ⩽ 0.09. A change from a normal ferroelectric behavior to diffusive and dispersive relaxor-like characteristic was also observed. Moreover, (1 − x)BT–xBZZ ceramics show good dielectric temperature stability over a wide temperature range, which indicates that these ceramics can be applied in the temperature stability devices.

Crystal structure, dielectric, ferroelectric and energy storage properties of La-doped BaTiO3 semiconducting ceramics

Directory of Open Access Journals (Sweden)

Venkata Sreenivas Puli

2015-09-01

Full Text Available Polycrystalline La-doped BaTiO3 (Ba(1-xLax\tTiO3 [x=0,0.0005,0.001,0.003] ceramics (denoted as BTO,BLT1,BLT2,BLT3 were synthesized by conventional solid-state reaction method and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, and Raman spectroscopy. XRD and Raman spectra revealed single-phase tetragonal perovskite crystalline structure. Well-saturated polarization–electric field (P–E hysteresis loops were observed with the measurement frequency of 50 Hz at room temperature and confirmed ferroelectric nature of these ceramics and a high recoverable electrical energy storage density of 0.350 J/cm3 with energy efficiency (n∼9%, which is useful in energy storage capacitor applications. Dielectric studies revealed anomalies around 415–420 K and near the Curie temperature. The latter is attributed to the ferroelectric to paraelectric phase transition. Better dielectric performances were obtained for La-doped samples sintered at 1350°C for 4 h. Grain growth is inhibited with lanthanum (La incorporation into the BTO lattice. Room temperature semiconducting behavior with positive temperature coefficient of resistivity (PTCR behavior at TC is attributed to electron compensation mechanism.

Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

Science.gov (United States)

Zijian Hong

of insulating STO is further revealed, which shows that a rich phase diagram can be formed by simply tuning the thickness of this layer. Wave-like polar spiral phase is simulated by substituting part of the PTO with BiFeO3 (BFO) in the PTO/STO superlattice (i.e., in a (PTO) 4/(BFO)4/(PTO)4/(STO)12 tricolor system) which has demonstrate ordered polar vortex lattice. This spiral phase is made up of semi-vortex cores that are floating up-down in the ferroelectric PTO layers, giving rise to a net in-plane polarization. An increase of Curie temperature and topological to regular domain transition temperature (over 200 K) is observed, due to the higher Curie temperature and larger spontaneous polarization in BFO layers. This unidirectional spiral state can be reversibly switched by experimentally feasible in-plane field, which evolves into a metastable vortex structure in-between two spiral phases with opposite in-plane directions. (Abstract shortened by ProQuest.).

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

Why is the electrocaloric effect so small in ferroelectrics?

Science.gov (United States)

Guzman-Verri, Gian G.; Littlewood, Peter B.

2015-03-01

Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we present meaningful figures of merit derived from well-known microscopic models of ferroelectricity which provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipole forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. Work at Argonne is supported by the U.S. Department of Energy, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

Organic non-volatile memories from ferroelectric phase-separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

2008-07-01

New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Pressure, temperature, and electric field dependence of phase transformations in niobium modified 95/5 lead zirconate titanate

Energy Technology Data Exchange (ETDEWEB)

Dong, Wen D.; Carlos Valadez, J.; Gallagher, John A.; Jo, Hwan R.; Lynch, Christopher S., E-mail: cslynch@seas.ucla.edu [Department of Mechanical and Aerospace Engineering, The University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, California 90095 (United States); Sahul, Raffi; Hackenberger, Wes [TRS Technologies, 2820 East College Avenue, State College, Pennsylvania 16801 (United States)

2015-06-28

Ceramic niobium modified 95/5 lead zirconate-lead titanate (PZT) undergoes a pressure induced ferroelectric to antiferroelectric phase transformation accompanied by an elimination of polarization and a volume reduction. Electric field and temperature drive the reverse transformation from the antiferroelectric to ferroelectric phase. The phase transformation was monitored under pressure, temperature, and electric field loading. Pressures and temperatures were varied in discrete steps from 0 MPa to 500 MPa and 25 °C to 125 °C, respectively. Cyclic bipolar electric fields were applied with peak amplitudes of up to 6 MV m{sup −1} at each pressure and temperature combination. The resulting electric displacement–electric field hysteresis loops were open “D” shaped at low pressure, characteristic of soft ferroelectric PZT. Just below the phase transformation pressure, the hysteresis loops took on an “S” shape, which split into a double hysteresis loop just above the phase transformation pressure. Far above the phase transformation pressure, when the applied electric field is insufficient to drive an antiferroelectric to ferroelectric phase transformation, the hysteresis loops collapse to linear dielectric behavior. Phase stability maps were generated from the experimental data at each of the temperature steps and used to form a three dimensional pressure–temperature–electric field phase diagram.

Dielectric response and pyroelectric properties of lead-free ferroelectric Ba3(VO42

Directory of Open Access Journals (Sweden)

Biswajit Pati

2015-03-01

Full Text Available The current paper presents results of dielectric response, pyroelectric behavior and conductivity study of lead-free ferroelectric barium orthovanadate (Ba3(VO42 or Ba3V2O8 ceramic, for a wide range of temperature and frequency. An X-ray diffraction study suggests the formation of a single-phase compound in trigonal crystal system. The SEM micrograph of gold-coated pellet sample shows well-defined and homogeneous morphology. Detailed studies of dielectric parameters (εr and tan δ of the compound as a function of temperature and frequency reveal their independence over a wide range of temperature and frequency. The nature of Polarization versus electric field (P–E hysteresis loop of Ba3V2O8 at room temperature suggests its ferroelectric nature. The temperature dependence of pyroelectric coefficient and figure of merits of the sample support its dielectric response. The nature of variation of dc conductivity with temperature confirms the Arrhenius and negative temperature coefficient of resistance (NTCR behavior of the material.

Giant Magnetoelectric Energy Conversion Utilizing Inter-Ferroelectric Phase Transformations in Ferroics

Science.gov (United States)

Finkel, Peter; Staruch, Margo

Phase transition-based electromechanical transduction permits achieving a non-resonant broadband mechanical energy conversion see (Finkel et al Actuators, 5 [1] 2. (2015)) , the idea is based on generation high energy density per cycle , at least 100x of magnitude larger than linear piezoelectric type generators in stress biased [011]cut relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal can generate reversible strain >0.35% at remarkably low fields (0.1 MV/m) for tens of millions of cycles. Recently we demonstrated that large strain and polarization rotation can be generated for over 40 x 106cycles with little fatigue by realization of reversible ferroelectric-ferroelectric phase transition in [011] cut PIN-PMN-PT relaxor ferroelectric single crystal while sweeping through the transition with a low applied electric field <0.18 MV/m under mechanical stress. This methodology was extended in the present work to propose magnetoelectric (ME) composite hybrid system comprised of highly magnetostrictive alloymFe81.4Ga18.6 (Galfenol), and lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT) domain engineered relaxor ferroelectric single crystal. A small time-varying magnetic field applied to this system causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. ME coupling coefficient was fond to achieve 80 V/cm Oe near the FR-FO phase transition that is at least 100X of magnitude higher than any currently reported values.

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

Possible mechanism for the room-temperature stabilization of the Ge(111) T > 300 deg.C phase by Ga

DEFF Research Database (Denmark)

Böhringer, M.; Molinás-Mata, P.; Zegenhagen, J.

1995-01-01

At low coverages, Ga on Ge(111) induces a hexagonal, domain wall modulated (2 x 2) adatom phase, stable at room temperature, that is characterized in low energy electron diffraction (LEED) by split 1/2-order reflections. This pattern closely resembles the one observed for a phase of clean Ge(111......) appearing at temperatures above 300 degrees C (T > 300 degrees C phase). We report scanning tunneling microscopy, LEED, as well. as surface x-ray diffraction measurements on the Ga-induced room-temperature (RT) phase and compare it with a model for the T > 300 OC phase of clean Ge(111). RT deposition of Ga...... yields a metastable c(2 x 8) structure which upon annealing transforms to the hexagonal (2 x 2) one. The transition occurs at considerably lower temperatures compared to clean Ge(111) and is irreversible due to pinning of adatom domains at Ga-induced defects, preventing the reordering of the adatoms...

Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

Science.gov (United States)

Mukherjee, Devajyoti

Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

International Nuclear Information System (INIS)

Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

1989-01-01

Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

Organic non-volatile memories from ferroelectric phase separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

2009-03-01

Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

Directory of Open Access Journals (Sweden)

Michael Vetter

2016-12-01

Full Text Available The room temperature photoluminescence (PL spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

An investigation on phase transition behaviors in MgO-doped Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics by Raman and dielectric measurements

Energy Technology Data Exchange (ETDEWEB)

Wang, Junxia, E-mail: wjunxia2002@163.com [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Genshui; Chen, Xuefeng [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Hu, Zhigao [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Nie, Hengchang; Cao, Fei [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-03-15

Highlights: • The phase transition behaviors were strongly dependent on MgO concentration. • The F{sub R(LT)}–F{sub R(HT)} phase transition temperature obviously shifted toward a lower temperature with increasing MgO addition. • The F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature with increasing MgO addition. • The distortion of BO{sub 6} oxygen octahedron caused by B-site replacement of Mg{sup 2+} ions is proposed to explain the observed behaviors. • Superior room-temperature pyroelectric properties were obtained in 0.1 wt% MgO-modified PZTN 95/5 ceramics during F{sub R(LT)}–F{sub R(HT)} phase transition. - Abstract: The phase transition behaviors of Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics doped with different MgO concentrations (0–0.2 wt%) were systematically investigated by Raman and dielectric measurements. Raman results showed that the phase transitions were strongly dependent on MgO concentration. It was found that the low temperature rhombohedral (F{sub R(LT)})–high temperature rhombohedral (F{sub R(HT)}) ferroelectric phase transition shifted toward a lower temperature with increasing MgO concentration up to 0.1 wt%, while the F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature. The Raman results were in good agreement with phase transition determined by dielectric measurements. Moreover, it was indicated that the changes of Raman active modes were related to distortion of BO{sub 6} octahedra during the phase transitions. Then, the distortion of BO{sub 6} octahedron caused by B-site replacement of Mg{sup 2+} ions was proposed to explain the observed behaviors. In addition, the effects of MgO doping on the dielectric, ferroelectric and pyroelectric properties were also discussed.

Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

International Nuclear Information System (INIS)

Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

2012-01-01

The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

Science.gov (United States)

Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

2014-06-01

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

First principles study of CaTIO3 crystal in paraelectric and ferroelectric phases

International Nuclear Information System (INIS)

Hashemi, H.; Kompany, A.; Hosseini, M.

2005-01-01

Electronic properties of CaTiO 3 crystal in paraelectric and ferroelectric phases have been studied by first principles, using Hohenberg-kohn-sham density functional theory. In paraelectric phase the results show an indirect band gap of about at 2eV at Γ-R direction in the Brillouin zone and a strong hybridization between Ti-3d an O-2P orbital. In ferroelectric phase a direct band gap of about 1 eV is seen at ***Γ point. Up to our knowledge no data has been reported on the ferroelectric phase so far, therefore our results might be useful for the future works

Neutron and x-ray scattering studies of ferroelectric phase transitions

International Nuclear Information System (INIS)

Dolling, G.

1982-08-01

The subject of ferroelectric type phase transitions is introduced by means of examples of two main classes (a) displacive transitions, e.g. KNbO 3 , and (b) order-disorder transitions, e.g. NaNO 2 . The significance of crystal structure and crystal dynamics (i.e. the phonon dispersion relations) for ferroelectric behaviour is emphasized. The chief methods for structure determination are x-ray and neutron diffraction, while the most powerful of all techniques for studying phonon properties is that of coherent inelastic neutron scattering. The most useful type of neutron spectrometer for phase transition studies, the triple axis crystal spectrometer, is discussed in detail. The history of the soft mode theory of displacive phase transitions, and its application to the antiferroelectric and 'almost ferroelectric' transitions in SrTiO 3 , provides an introduction to more recent developments in this area, including over-damped soft modes, central peaks and critical scattering, incommensurate phase transitions (e.g. K 2 SeO 4 ), amplitudons, phasons and finally solitions. The treatment throughout is descriptive and introductory, designed for graduate students

Transmission electron microscope studies of phase transitions in single crystals and ceramics of ferroelectric Pb(Sc1/2Ta1/2)O3

International Nuclear Information System (INIS)

Baba-Kishi, K.Z.; Barber, D.J.

1990-01-01

An account is given of transmission electron microscope investigations of the phase transitions in single crystals and ceramics of the complex perovskite-structured ferroelectric 'relaxor' compound Pb(Sc 1/2 Ta 1/2 )O 3 . The crystal symmetries pertaining to both the non-polar paraelectric (PE) and polar ferroelectric (FE) states have been studied by the technique of convergent-beam electron diffraction. A new phase transition has been discovered in the temperature range for which the FE and PE states coexist. The new phase transition is interpreted as the creation of a modulated antiferroelectric state, and this is viewed as marking a departure from relaxor behaviour towards more 'normal' ferroelectric behaviour. (orig.)

Hybrid improper ferroelectricity in Ruddlesden-Popper Ca{sub 3}(Ti,Mn){sub 2}O{sub 7} ceramics

Energy Technology Data Exchange (ETDEWEB)

Liu, X. Q., E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn; Wu, J. W.; Shi, X. X.; Zhao, H. J.; Zhou, H. Y.; Chen, X. M., E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn [Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Qiu, R. H.; Zhang, W. Q. [Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)

2015-05-18

The hybrid improper ferroelectricity (HIF) has been proposed as a promising way to create multiferroic materials with strong magnetoelectric coupling by the first-principle calculation, and the experimental evidences of HIF in Ruddlesden-Poper Ca{sub 3}(Ti{sub 1−x}Mn{sub x}){sub 2}O{sub 7} (x = 0, 0.05, 0.1, and 0.15) ceramics have been shown in the present work. The room temperature ferroelectric hysteresis loops are observed in these ceramics, and a polar orthorhombic structure with two oxygen tilting modes has been confirmed by the X-ray powder diffraction. A first-order phase transition around 1100 K in Ca{sub 3}Ti{sub 2}O{sub 7} was evidenced, and the temperatures of phase transitions decrease linearly with increasing of the contents of Mn{sup 4+} ions. Based on the result of first-principle calculations, the polarization should be reversed by switching through the mediated Amam phase in Ca{sub 3}Ti{sub 2}O{sub 7} ceramics.

Composition driven structural instability in perovskite ferroelectrics

Directory of Open Access Journals (Sweden)

Chao Xu

2017-04-01

Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

Voltage tunability of thermal conductivity in ferroelectric materials

Science.gov (United States)

Ihlefeld, Jon; Hopkins, Patrick Edward

2016-02-09

A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

Surface topography and crystal and domain structures of films of ferroelectric copolymer of vinylidene difluoride and trifluoroethylene

Energy Technology Data Exchange (ETDEWEB)

Kochervinskii, V. V., E-mail: kochval@mail.ru [Karpov Institute of Physical Chemistry, Branch (Russian Federation); Kiselev, D. A.; Malinkovich, M. D. [National University of Science and Technology MISiS (Russian Federation); Korlyukov, A. A.; Lokshin, B. V. [Russian Academy of Sciences, Nesmeyanov Institute of Organoelement Compounds (Russian Federation); Volkov, V. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation); Kirakosyan, G. A. [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Pavlov, A. S. [Karpov Institute of Physical Chemistry, Branch (Russian Federation)

2017-03-15

The crystallization of a copolymer from a solution at room temperature is found to lead to the formation of a metastable structure, characterized by the coexistence of ferroelectric and paraelectric phases. The fraction of the latter decreases after annealing above the Curie point. Atomic force microscopy (AFM) has revealed a difference in the surface topographies between the films contacting with air and the films contacting with a glass substrate. The microstructure of copolymer chains has been investigated by {sup 19}F NMR spectroscopy. The chain fragments with “defect” attached monomeric units are ejected to the surface. The character of the ferroelectric domains formed during crystallization and their size distribution are analyzed.

A qualitative test for intrinsic size effect on ferroelectric phase transitions

OpenAIRE

Wang, Jin; Tagantsev, Alexander K.; Setter, Nava

2010-01-01

The size effect in ferroelectrics is treated as a competition between the geometrical symmetry of the ferroelectric sample and its crystalline symmetry. The manifestation of this competition is shown to be polarization rotation, which is driven by temperature and/or size variations, thus providing a qualitative indication of intrinsic finite size effect on ferroelectrics. The concept is demonstrated in a simple case of PbTiO3 nanowires having their axis parallel to [111]C direction, where the...

Low-temperature structure and the ferroelectric phase transitions in the CdTi O3 perovskite

Science.gov (United States)

Kennedy, Brendan J.; Zhou, Qingdi; Zhao, Shipeng; Jia, Fanhao; Ren, Wei; Knight, Kevin S.

2017-12-01

The paraelectric-ferroelectric transition in CdTi O3 has been monitored using high-resolution neutron diffraction data. This necessitated preparing a sample enriched in 114Cd. A subtle, but significant, anisotropy in the thermal expansion of the lattice parameters for CdTi O3 associated with the transition to the polar structure was observed. First-principles calculations are presented to understand energies, phonon dispersion, and structures of possible phases with different symmetries.

Room and high temperature deformation behaviour of a forged Fe–15Al–5Nb alloy with a reinforcing dispersion of equiaxed Laves phase particles

International Nuclear Information System (INIS)

Morris, D.G.; Muñoz-Morris, M.A.

2012-01-01

Highlights: ► Forged Fe–15%Al–5%Nb has a composite structure of soft matrix with equiaxed Laves phase particles. ► The material shows good strength with excellent ductility at room temperature. ► Good creep strength is maintained to 700 °C. ► The coarse composite microstructure ensures good long term stability at high temperatures. ► High temperature strength depends on load sharing between phases and microstructural refinement. - Abstract: The cast-in network of continuous Laves phase in a Fe–15%Al–5%Nb alloy has been converted to a dispersion of coarse Laves phase particles by high temperature forging, and the room temperature and high temperature deformation behaviour examined. The material shows good room temperature tensile ductility and good creep strength at temperatures up to 700 °C. The good high temperature strength is explained by the refinement of substructure by the dispersion of Laves phase particles and load and strain partitioning between the stiff and hard phase and the softer matrix. The relatively coarse microstructure is expected to be highly stable against coarsening at high temperatures, which should allow retention of creep properties even for long exposure times.

Room temperature exchange bias in SmFeO_3 single crystal

International Nuclear Information System (INIS)

Wang, Xiaoxiong; Cheng, Xiangyi; Gao, Shang; Song, Junda; Ruan, Keqing; Li, Xiaoguang

2016-01-01

Exchange bias phenomenon is generally ascribed to the unidirectional magnetic shift along the field axes at interface of two magnetic materials. Room temperature exchange bias is found in SmFeO_3 single crystal. The behavior after different cooling procedure is regular, and the training behavior is attributed to the athermal training and its pinning origin is attributed to the antiferromagnetic clusters. Its being single phase and occurring at room temperature make it an appropriate candidate for application. - Graphical abstract: Room temperature exchange bias was found in oxide single crystal. Highlights: • Room temperature exchange bias has been discovered in single-crystalline SmFeO_3. • Its pinning origin is attributed to the antiferromagnetic clusters. • Its being single phase and occurring at room temperature make it an appropriate candidate for application.

A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

National Research Council Canada - National Science Library

Raye, Julie K; Smith, Ralph C

2004-01-01

This paper summarizes the development of a homogenized free energy model which characterizes the temperature-dependent hysteresis and constitutive nonlinearities inherent to relaxor ferroelectric materials...

Room temperature superconductors

International Nuclear Information System (INIS)

Sleight, A.W.

1995-01-01

If the Holy Grail of room temperature superconductivity could be achieved, the impact on could be enormous. However, a useful room temperature superconductor for most applications must possess a T c somewhat above room temperature and must be capable of sustaining superconductivity in the presence of magnetic fields while carrying a significant current load. The authors will return to the subject of just what characteristics one might seek for a compound to be a room temperature superconductor. 30 refs., 3 figs., 1 tab

Controlling the properties of ferroelectric-nickelate interfaces

Science.gov (United States)

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

2015-03-01

Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

Energy Technology Data Exchange (ETDEWEB)

Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-04-07

Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

Modeling two-phase ferroelectric composites by sequential laminates

International Nuclear Information System (INIS)

Idiart, Martín I

2014-01-01

Theoretical estimates are given for the overall dissipative response of two-phase ferroelectric composites with complex particulate microstructures under arbitrary loading histories. The ferroelectric behavior of the constituent phases is described via a stored energy density and a dissipation potential in accordance with the theory of generalized standard materials. An implicit time-discretization scheme is used to generate a variational representation of the overall response in terms of a single incremental potential. Estimates are then generated by constructing sequentially laminated microgeometries of particulate type whose overall incremental potential can be computed exactly. Because they are realizable, by construction, these estimates are guaranteed to conform with any material constraints, to satisfy all pertinent bounds and to exhibit the required convexity properties with no duality gap. Predictions for representative composite and porous systems are reported and discussed in the light of existing experimental data. (paper)

A quaternary lead based perovskite structured materials with diffuse phase transition behavior

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Martínez, R.; Kumar, Ashok; Scott, J.F.; Katiyar, Ram S.

2011-01-01

Graphical abstract: (a) Curie–Weiss plot for the inverse of the relative dielectric permittivity and (b) log (1/ε − 1/ε m ) as function of log (T − T m ) for ceramics at 1 kHz. Highlights: ► Retaining phase pure structure with quaternary complex stoichiometric compositions. ► P–E loops with good saturation polarization (P s ∼ 30.7 μC/cm 2 ). ► Diffused relaxor phase transition behavior with γ estimated is ∼1.65. -- Abstract: A lead based quaternary compound composed of 0.25(PbZr 0.52 Ti 0.48 O 3 ) + 0.25(PbFe 0.5 Ta 0.5 O 3 ) + 0.25 (PbF 0.67 W 0.33 O 3 ) + 0.25(PbFe 0.5 Nb 0.5 O 3 ) – (PZT–PFT–PFW–PFN) was synthesized by conventional solid-state reaction techniques. It showed moderate high dielectric constant, low dielectric loss, and two diffuse phase transitions, one below the room temperature ∼261 K and other above ∼410 K. X-ray diffraction (XRD) patterns revealed a tetragonal crystal structure at room temperature where as scanning electron micrograph (SEM) indicates inhomogeneous surface with an average grain size of 500 nm–3 μm. Well saturated ferroelectric hysteresis loops with good saturation polarization (spontaneous polarization, P s ∼ 30.68 μC/cm 2 ) were observed. Temperature-dependent ac conductivity displayed low conductivity with kink in spectra near the phase transition. In continuing search for developing new ferroelectric materials, in the present study we report stoichiometric compositions of complex perovskite ceramic materials: (PZT–PFT–PFW–PFN) with diffuse phase transition behavior. The crystal structure, dielectric properties, and ferroelectric properties were characterized by XRD, SEM, dielectric spectroscopy, and polarization. 1/ε versus (T) plots revealed diffuse relaxor phase transition (DPT) behavior. The compositional variation on the phase transition temperature, dielectric constant, and ferroelectric to paraelectric phase transitions are discussed.

A quaternary lead based perovskite structured materials with diffuse phase transition behavior

Energy Technology Data Exchange (ETDEWEB)

Puli, Venkata Sreenivas, E-mail: pvsri123@gmail.com [Department of Physics and Institute for Functional Nano Materials, University of Puerto Rico, San Juan, PR 00936 (United States); Martinez, R.; Kumar, Ashok [Department of Physics and Institute for Functional Nano Materials, University of Puerto Rico, San Juan, PR 00936 (United States); Scott, J.F. [Department of Physics and Institute for Functional Nano Materials, University of Puerto Rico, San Juan, PR 00936 (United States); Cavendish Laboratory, Dept. Physics, University of Cambridge, Cambridge CB0 3HE (United Kingdom); Katiyar, Ram S., E-mail: rkatiyar@uprrp.edu [Department of Physics and Institute for Functional Nano Materials, University of Puerto Rico, San Juan, PR 00936 (United States)

2011-12-15

Graphical abstract: (a) Curie-Weiss plot for the inverse of the relative dielectric permittivity and (b) log (1/{epsilon} - 1/{epsilon}{sub m}) as function of log (T - T{sub m}) for ceramics at 1 kHz. Highlights: Black-Right-Pointing-Pointer Retaining phase pure structure with quaternary complex stoichiometric compositions. Black-Right-Pointing-Pointer P-E loops with good saturation polarization (P{sub s} {approx} 30.7 {mu}C/cm{sup 2}). Black-Right-Pointing-Pointer Diffused relaxor phase transition behavior with {gamma} estimated is {approx}1.65. -- Abstract: A lead based quaternary compound composed of 0.25(PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}) + 0.25(PbFe{sub 0.5}Ta{sub 0.5}O{sub 3}) + 0.25 (PbF{sub 0.67}W{sub 0.33}O{sub 3}) + 0.25(PbFe{sub 0.5}Nb{sub 0.5}O{sub 3}) - (PZT-PFT-PFW-PFN) was synthesized by conventional solid-state reaction techniques. It showed moderate high dielectric constant, low dielectric loss, and two diffuse phase transitions, one below the room temperature {approx}261 K and other above {approx}410 K. X-ray diffraction (XRD) patterns revealed a tetragonal crystal structure at room temperature where as scanning electron micrograph (SEM) indicates inhomogeneous surface with an average grain size of 500 nm-3 {mu}m. Well saturated ferroelectric hysteresis loops with good saturation polarization (spontaneous polarization, P{sub s} {approx} 30.68 {mu}C/cm{sup 2}) were observed. Temperature-dependent ac conductivity displayed low conductivity with kink in spectra near the phase transition. In continuing search for developing new ferroelectric materials, in the present study we report stoichiometric compositions of complex perovskite ceramic materials: (PZT-PFT-PFW-PFN) with diffuse phase transition behavior. The crystal structure, dielectric properties, and ferroelectric properties were characterized by XRD, SEM, dielectric spectroscopy, and polarization. 1/{epsilon} versus (T) plots revealed diffuse relaxor phase transition (DPT) behavior. The

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Directory of Open Access Journals (Sweden)

S. Riedel

2016-09-01

Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

Science.gov (United States)

Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

2013-11-28

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

Science.gov (United States)

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Using the ferroelectric/ferroelastic effect at cryogenic temperatures for set-and-hold actuation

Science.gov (United States)

Steeves, J. B.; Golinveaux, F. S.; Lynch, C. S.

2018-06-01

The ferroelectric and ferroelastic properties of lead-zirconate-titanate (PZT) based stack actuators have been characterized at temperatures down to 25 K and under various levels of constant compressive stress. Experiments indicate that the coercive field and magnitude of strain at the coercive field display an inverse relationship with temperature. A factor of 5.5 increase in coercive field, and a factor of 4.3 increase in strain is observed at 25 K in comparison to the room-temperature conditions. This information was used to induce non-180° domain wall motion in the material through the application of electric fields at or near the coercive field. The change in remanent strain accompanying these effects was shown to increase in magnitude as temperature decreased, reaching values of 2000 ppm at 25 K. This behavior was also shown to be temporally stable even under compressive loads. Additionally, it was demonstrated that the material can be returned to its original strain state through a repolarizing electric field. This switchable behavior could be exploited for future set-and-hold type actuators operating at cryogenic temperatures.

Dielectric properties in the vicinity of the ferroelectric phase transition in a mixed crystal of deuterated betaine phosphate{sub 0.03} betaine phosphite{sub 0.97}

Energy Technology Data Exchange (ETDEWEB)

Banys, J.; Macutkevic, J.; Kajokas, A.; Brilingas, A.; Grigas, J. [Faculty of Physics, Vilnius University, Sauletekio 9, Vilnius 2040 (Lithuania); Klimm, C.; Voelkel, G. [Fakultaet fuer Physik und Geowissenschaften, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

2004-02-01

The dielectric behaviour of ferroelectric hydrogen bonded deuterated betaine phosphate{sub 0.03} betaine phosphite{sub 0.97} (DBP{sub 0.03}DBPI{sub 0.97})is investigated in the region of the ferroelectric phase transition. Dielectric dispersion is investigated in the frequency range up to 12 GHz. The dielectric dynamics shows a critical slowing down. The frequency of the relaxational soft mode in the paraelectric phase varies according to the quasi-one-dimensional Ising model and decreases up to 0.31 GHz at the phase transition temperature (T{sub C}=272 K). The obtained activation energy for the deuteron flipping motion {delta}U=2.3kT{sub C}=0.054 eV shows the order-disorder character of the ferroelectric phase transition. The spontaneous polarisation, obtained from pyroelectric measurements, is also well explained using the quasi-one-dimensional Ising model. At low temperatures, the freezing phenomena in DBP{sub 0.03}DBPI{sub 0.97} revealed the complex dielectric permittivity behaviour characteristic for the transition into the dipolar glass state. The activation energy of this low temperature process was found to be E{sub b}=1297 K (0.041 eV) and the glass temperature was estimated to 73 K. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Unveiling the Role of CNTs on the Phase Formation of 1D Ferroelectrics

KAUST Repository

Mahajan, Amit

2015-05-21

Carbon nanotubes (CNTs) have the potential to act as templates or bottom electrodes for three dimension (3D) capacitor arrays, which utilise one dimension (1D) ferroelectric nanostructures to increase memory size and density. However, growing a ferroelectric on the surface of CNTs is non-trivial. Here, we demonstrate that multi-walled (MW) CNTs decrease the time and temperature for formation of lead zirconium titanate Pb(Zr1-xTix)O3 (PZT) by ~100 ºC commensurate with a decrease in activation energy from 68±15 kJ/mol to 27±2 kJ/mol. As a consequence, monophasic PZT was obtained at 575 ºC for MWCNTs/PZT whereas for pure PZT traces of pyrochlore were still present at 650 ºC, where PZT phase formed due to homogeneous nucleation. The piezoelectric nature of MWCNT/PZT synthesised at 500 ºC for 1 h was proved. Although further work is required to prove the concept of 3D capacitor arrays, our result suggests that it is feasible to utilise MWCNTs as templates/electrodes for the formation of 1D PZT nano ferroelectrics.

Intensive up-conversion photoluminescence of Er3+-doped Bi7Ti4NbO21 ferroelectric ceramics and its temperature sensing

Directory of Open Access Journals (Sweden)

Hua Zou

2014-10-01

Full Text Available The intensive up-conversion (UC photoluminescence and temperature sensing behavior of Er3+-doped Bi7Ti4NbO21(BTN ferroelectric ceramics prepared by a conventional solid-state reaction technique have been investigated. The X-ray diffraction and field emission scanning electron microscope analyses demonstrated that the Er3+-doped BTN ceramics are single phase and uniform flake-like structure. With the Er3+ ions doping, the intensive UC emission was observed without obviously changing the properties of ferroelectric. The optimal emission intensity was obtained when Er doping level was 15 mol.%. The temperature sensing behavior was studied by fluorescence intensity ratio (FIR technique of two green UC emission bands, and the experimental data fitted very well with the function of temperature in a range of 133–573 K. It suggested that the Er3+-doped BTN ferroelectric ceramics are very good candidates for applications such as optical thermometry, electro-optical devices and bio-imaging ceramics.

A general analytical equation for phase diagrams of an N-layer ferroelectric thin film with two surface layers

Energy Technology Data Exchange (ETDEWEB)

Lu, Z X; Teng, B H; Rong, Y H; Lu, X H; Yang, X [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)], E-mail: phytbh@163.com

2010-03-15

Within the framework of effective-field theory with correlations, the phase diagrams of an N-layer ferroelectric thin film with two surface layers are studied by the differential operator technique based on the spin-1/2 transverse Ising model. A general analytical equation for the phase diagram of a ferroelectric thin film with arbitrary layer number as well as exchange interactions and transverse fields is derived, and then the effects of exchange interactions and transverse fields on phase diagrams are discussed for an arbitrary layer number N. Meanwhile, the crossover features, from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD), for various parameters of an N-layer ferroelectric thin film with two surface layers are investigated. As a result, an N-independent common intersection point equation is obtained, and the three-dimensional curved surfaces for the crossover values are constructed. In comparison with the usual mean-field approximation, the differential operator technique with correlations reduces to some extent the ferroelectric features of a ferroelectric thin film.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

Science.gov (United States)

Zhang, Ji; Sun, Wei; Zhao, Jiangtao; Sun, Lei; Li, Lei; Yan, Xue-Jun; Wang, Ke; Gu, Zheng-Bin; Luo, Zhen-Lin; Chen, Yanbin; Yuan, Guo-Liang; Lu, Ming-Hui; Zhang, Shan-Tao

2017-08-02

Thin films of 0.85BiFe 1-2x Ti x Mg x O 3 -0.15CaTiO 3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO 3 substrate with and without a conductive La 0.7 Sr 0.3 MnO 3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm 3 , respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO 3 -based materials with unusual multifunctional properties.

Non-Resonant Magnetoelectric Energy Harvesting Utilizing Phase Transformation in Relaxor Ferroelectric Single Crystals

Directory of Open Access Journals (Sweden)

Peter Finkel

2015-12-01

Full Text Available Recent advances in phase transition transduction enabled the design of a non-resonant broadband mechanical energy harvester that is capable of delivering an energy density per cycle up to two orders of magnitude larger than resonant cantilever piezoelectric type generators. This was achieved in a [011] oriented and poled domain engineered relaxor ferroelectric single crystal, mechanically biased to a state just below the ferroelectric rhombohedral (FR-ferroelectric orthorhombic (FO phase transformation. Therefore, a small variation in an input parameter, e.g., electrical, mechanical, or thermal will generate a large output due to the significant polarization change associated with the transition. This idea was extended in the present work to design a non-resonant, multi-domain magnetoelectric composite hybrid harvester comprised of highly magnetostrictive alloy, [Fe81.4Ga18.6 (Galfenol or TbxDy1-xFe2 (Terfenol-D], and lead indium niobate–lead magnesium niobate–lead titanate (PIN-PMN-PT domain engineered relaxor ferroelectric single crystal. A small magnetic field applied to the coupled device causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. We have demonstrated high energy conversion in this magnetoelectric device by triggering the FR-FO transition in the single crystal by a small ac magnetic field in a broad frequency range that is important for multi-domain hybrid energy harvesting devices.

Electric-field-induced phase transitions in co-doped Pb(Zr1−xTixO3 at the morphotropic phase boundary

Directory of Open Access Journals (Sweden)

Daniel J Franzbach

2014-02-01

Full Text Available The strain- and polarization-electric field behavior was characterized at room temperature for Pb0.98Ba0.01(Zr1−xTix0.98Nb0.02O3, 0.40 ≤ x ≤ 0.60. The investigated compositions were located in the vicinity of the morphotropic phase boundary, giving insight into the influence of crystal structure on the hysteretic ferroelectric behavior. The remanent strain of particular compositions is shown to be larger than theoretically allowed by ferroelectric switching alone, indicating the presence of additional remanent strain mechanisms. A phenomenological free energy analysis was used to simulate the effect of an applied electric field on the initial equilibrium phase. It is shown that electric-field-induced phase transitions in polycrystalline ferroelectrics can account for the experimental observations. The experimental and simulation results are contrasted to neutron diffraction measurements performed on representative compositions in the virgin and remanent states.

Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy

International Nuclear Information System (INIS)

Tenne, D.A.; Soukiassian, A.; Xi, X.X.; Taylor, T.R.; Hansen, P.J.; Speck, J.S.; York, R.A.

2004-01-01

We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5 Sr 0.5 TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T C , was determined. We found that T C decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films

Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

International Nuclear Information System (INIS)

Cornejo, I.A.; Haun, M.J.

1996-01-01

Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

Electric-Field Control of Magnetism in Co40Fe40B20/(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 Multiferroic Heterostructures with Different Ferroelectric Phases.

Science.gov (United States)

Liu, Yan; Zhao, Yonggang; Li, Peisen; Zhang, Sen; Li, Dalai; Wu, Hao; Chen, Aitian; Xu, Yang; Han, X F; Li, Shiyan; Lin, Di; Luo, Haosu

2016-02-17

Electric-field control of magnetism in multiferroic heterostructures composed of Co40Fe40B20 (CoFeB) and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) with different ferroelectric phases via changing composition and temperature is explored. It is demonstrated that the nonvolatile looplike bipolar-electric-field-controlled magnetization, previously found in the CoFeB/PMN-xPT heterostructures with PMN-xPT in the rhombohedral (R) phase around the morphotropic phase boundary (MPB), also occurs for PMN-xPTs with both R phase (far away from MPB) and monoclinic (M) phase, suggesting that the phenomenon is the common feature of CoFeB/PMN-xPT multiferroic heterostructures for PMN-xPT with different phases. The magnitude of the effect changes with increasing temperature and volatile bipolar-electric-field-controlled magnetization with a butterflylike behavior occurs when the ferroelectric phase changes to the tetragonal phase (T). Moreover, for the R-phase sample with x = 0.18, an abrupt and giant increase of magnetization is observed at a characteristic temperature in the temperature dependence of magnetization curve. These results are discussed in terms of coupling between magnetism and ferroelectric domains including macro- and microdomains for different ferroelectric phases. This work is helpful for understanding the phenomena of electric-field control of magnetism in FM/FE multiferroic heterostructures and is also important for applications.

Effects of temperature and electric field on order parameters in ferroelectric hexagonal manganites

Science.gov (United States)

Zhang, C. X.; Yang, K. L.; Jia, P.; Lin, H. L.; Li, C. F.; Lin, L.; Yan, Z. B.; Liu, J.-M.

2018-03-01

In Landau-Devonshire phase transition theory, the order parameter represents a unique property for a disorder-order transition at the critical temperature. Nevertheless, for a phase transition with more than one order parameter, such behaviors can be quite different and system-dependent in many cases. In this work, we investigate the temperature (T) and electric field (E) dependence of the two order parameters in improper ferroelectric hexagonal manganites, addressing the phase transition from the high-symmetry P63/mmc structure to the polar P63cm structure. It is revealed that the trimerization as the primary order parameter with two components: the trimerization amplitude Q and phase Φ, and the spontaneous polarization P emerging as the secondary order parameter exhibit quite different stability behaviors against various T and E. The critical exponents for the two parameters Q and P are 1/2 and 3/2, respectively. As temperature increases, the window for the electric field E enduring the trimerization state will shrink. An electric field will break the Z2 part of the Z2×Z3 symmetry. The present work may shed light on the complexity of the vortex-antivortex domain structure evolution near the phase transition temperature.

High Power Room Temperature Terahertz Local Oscillator, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We propose to build a high-power, room temperature compact continuous wave terahertz local oscillator for driving heterodyne receivers in the 1-5 THz frequency...

Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

Science.gov (United States)

Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

2018-02-01

Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

Science.gov (United States)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends

NARCIS (Netherlands)

Asadi, Kamal; de Boer, Tom G.; Blom, Paul W. M.; de Leeuw, Dago M.

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

NARCIS (Netherlands)

Asadi, K.; Boer, T.G. de; Blom, P.W.M.; Leeuw, D.M. de

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

Theoretical study on phase coexistence in ferroelectric solid solutions near the tricritical point

Energy Technology Data Exchange (ETDEWEB)

Lu, Xiaoyan, E-mail: luxy@hit.edu.cn, E-mail: dzk@psu.edu; Li, Hui [Key Lab of Structures Dynamic Behavior and Control of the Ministry of Education, School of Civil Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zheng, Limei [Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150001 (China); Cao, Wenwu [Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150001 (China); Department of Mathematics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-04-07

Phase coexistence in ferroelectric solid solutions near the tricritical point has been theoretically analyzed by using the Landau-Devonshire theory. Results revealed that different phases having similar potential wells could coexist in a narrow composition range near the tricritical point in the classical Pb(Zr{sub 1−x}Ti{sub x})O{sub 3} system. The potential barrier between potential wells increases with the decrease of temperature. Coexisting phases or different domains of the same phase can produce adaptive strains to maintain atomic coherency at the interfaces or domain walls. Such compatibility strains have influence on the energy potential as well as the stability of relative phases, leading to the appearance of energetically unfavorable monoclinic phases. Those competing and coexisting phases also construct an easy phase transition path with small energy barrier in between, so that very small stimuli can produce large response in compositions near the morphotropic phase boundary, especially near the tricritical point.

Theoretical study on phase coexistence in ferroelectric solid solutions near the tricritical point

International Nuclear Information System (INIS)

Lu, Xiaoyan; Li, Hui; Zheng, Limei; Cao, Wenwu

2015-01-01

Phase coexistence in ferroelectric solid solutions near the tricritical point has been theoretically analyzed by using the Landau-Devonshire theory. Results revealed that different phases having similar potential wells could coexist in a narrow composition range near the tricritical point in the classical Pb(Zr 1−x Ti x )O 3 system. The potential barrier between potential wells increases with the decrease of temperature. Coexisting phases or different domains of the same phase can produce adaptive strains to maintain atomic coherency at the interfaces or domain walls. Such compatibility strains have influence on the energy potential as well as the stability of relative phases, leading to the appearance of energetically unfavorable monoclinic phases. Those competing and coexisting phases also construct an easy phase transition path with small energy barrier in between, so that very small stimuli can produce large response in compositions near the morphotropic phase boundary, especially near the tricritical point

Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

Science.gov (United States)

Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

2018-01-10

Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

Room temperature magneto-electric coupling in La-Zn doped Ba{sub 1-x}La{sub x}Fe{sub 12-x}Zn{sub x}O{sub 19} (x = 0.0-0.4) hexaferrite

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pawan; Gaur, Anurag [National Institute of Technology, Department of Physics, Kurukshetra (India)

2017-12-15

Barium hexaferrite powder samples with substitution of La{sup +3} at Ba{sup +2} and Zn{sup +2} at Fe{sup +3} site, according to the series formula Ba{sub 1-x}La{sub x}Fe{sub 12-x}Zn{sub x}O{sub 19} (x = 0.0, 0.1, 0.2, 0.3, 0.4) have been prepared by the co-precipitation method. These samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy, Polarization versus electric field loop tracer and vibrating sample magnetometer techniques. XRD patterns and Rietveld refinement indicate the single-phase formation of the magneto-plumbite barium hexaferrite for all the samples. Significant changes in dielectric properties are obtained by the different doping concentration of La and Zn. Ferroelectric loop for all the samples shows the lossy ferroelectric behaviour. Large spontaneous polarization is observed for x = 0.2 sample at room temperature. With increasing La and Zn doping content, the value of saturation magnetization and retentivity increases, and reaches a maximum value of 40.0 emu/gm and 24.0 emu/gm, respectively, for x = 0.2 sample and then decreases. To confirm the magneto-electric coupling, the second-order magneto-electric coupling coefficient β is measured through the dynamic method with the maximum value of ∝ 1.69 x 10{sup -6} mV/cm.Oe{sup 2} for x = 0.2 sample at room temperature. The observations of room temperature magneto-electric coupling in these samples are useful for evolution of new multifunctional devices. (orig.)

Stress effects in ferroelectric perovskite thin-films

Science.gov (United States)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

Infrared nanoscopy down to liquid helium temperatures

Science.gov (United States)

Lang, Denny; Döring, Jonathan; Nörenberg, Tobias; Butykai, Ádám; Kézsmárki, István; Schneider, Harald; Winnerl, Stephan; Helm, Manfred; Kehr, Susanne C.; Eng, Lukas M.

2018-03-01

We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near-field sample analysis and spectroscopy from room temperature down to liquid helium (LHe) temperature. The extension of s-SNIM down to T = 5 K is in particular crucial for low-temperature phase transitions, e.g., for the examination of superconductors, as well as low energy excitations. The low temperature (LT) s-SNIM performance is tested with CO2-IR excitation at T = 7 K using a bare Au reference and a structured Si/SiO2-sample. Furthermore, we quantify the impact of local laser heating under the s-SNIM tip apex by monitoring the light-induced ferroelectric-to-paraelectric phase transition of the skyrmion-hosting multiferroic material GaV4S8 at Tc = 42 K. We apply LT s-SNIM to study the spectral response of GaV4S8 and its lateral domain structure in the ferroelectric phase by the mid-IR to THz free-electron laser-light source FELBE at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. Notably, our s-SNIM is based on a non-contact atomic force microscope (AFM) and thus can be complemented in situ by various other AFM techniques, such as topography profiling, piezo-response force microscopy (PFM), and/or Kelvin-probe force microscopy (KPFM). The combination of these methods supports the comprehensive study of the mutual interplay in the topographic, electronic, and optical properties of surfaces from room temperature down to 5 K.

Composition, ferroelectric and antiferroelectric ordering in Pb2InNbO6 crystals

International Nuclear Information System (INIS)

Bokov, A.A.; Raevskij, I.P.; Smotrakov, V.G.

1984-01-01

Effect of thermal treatment on temperatures of phase transitions and electrical properties has been studied in Pb 2 InNbO 6 crystals with the high-temperature phase transition of the order-disorder type in In and Nb cations disposition in crystallographic positions. The order-disorder transition temperature (Tsub(t) approximately 1020 deg C) has been directly determined for the first time using the method of electric conductivity investigation. It has been shown that Pb 2 InNbO 6 in the ordered state represents the antiferroelectric material with the Curie point of 195 deg C, and it represents the ferroelectric material with a smeared transition to the paraelectric phase in the temperature range of 60 deg C in the disordered state. With temperature decrease crystals with the mean ordering degree-paraelectric phase pass to the antiferroelectric phase and then to the ferroelectric phase

Growth of Ca, Zr co-doped BaTiO3 lead-free ferroelectric single crystal and its room-temperature piezoelectricity

Directory of Open Access Journals (Sweden)

Donglin Liu

2017-09-01

Full Text Available Lead-free Ca, Zr co-doped BaTiO3 (BCZT single crystal with a dimension up to 2mm×2mm×2mm was grown by a spontaneous nucleation technique using KF as the flux. The composition of the studied single crystal was defined to be Ba0.798Ca0.202Zr0.006Ti0.994O3, corresponding to a tetragonal phase at room temperature. The oriented single crystal exhibited a quasi-static piezoelectric constant of approximately 232 pC/N. The effective piezoelectric coefficient d33* of the single domain crystal obtained under a unipolar electric field of 35 kV/cm was 179 pm/V. Rayleigh analysis was used to identify the intrinsic and extrinsic contributions to the room-temperature piezoelectricity of BCZT single crystal. The extrinsic contribution was estimated up to 40% due to the irreversible domain wall movement. Furthermore a sixth-order polynomial of Landau expansion was employed to analyze the intrinsic contribution to piezoelectricity of BCZT single crystal. The large energy barriers inhibited polarization rotations, leading to the relatively low piezoelectricity.

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

Directory of Open Access Journals (Sweden)

Venkata Sreenivas Puli

2015-01-01

Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

Dual strain mechanisms in a lead-free morphotropic phase boundary ferroelectric

DEFF Research Database (Denmark)

Walker, Julian; Simons, Hugh; Alikin, Denis O

2016-01-01

Electromechanical properties such as d33 and strain are significantly enhanced at morphotropic phase boundaries (MPBs) between two or more different crystal structures. Many actuators, sensors and MEMS devices are therefore systems with MPBs, usually between polar phases in lead (Pb)-based ferroe......Electromechanical properties such as d33 and strain are significantly enhanced at morphotropic phase boundaries (MPBs) between two or more different crystal structures. Many actuators, sensors and MEMS devices are therefore systems with MPBs, usually between polar phases in lead (Pb......)-based ferroelectric ceramics. In the search for Pb-free alternatives, systems with MPBs between polar and non-polar phases have recently been theorized as having great promise. While such an MPB was identified in rare-earth (RE) modified bismuth ferrite (BFO) thin films, synthesis challenges have prevented its...... realization in ceramics. Overcoming these, we demonstrate a comparable electromechanical response to Pb-based materials at the polar-to-non-polar MPB in Sm modified BFO. This arises from 'dual' strain mechanisms: ferroelectric/ferroelastic switching and a previously unreported electric-field induced...

Monitoring and understanding the paraelectric-ferroelectric phase transition in the metal-organic framework [NH4 ][M(HCOO)3 ] by solid-state NMR spectroscopy.

Science.gov (United States)

Xu, Jun; Lucier, Bryan E G; Sinelnikov, Regina; Terskikh, Victor V; Staroverov, Viktor N; Huang, Yining

2015-10-05

The paraelectric-ferroelectric phase transition in two isostructural metal-organic frameworks (MOFs) [NH4 ][M(HCOO)3 ] (M=Mg, Zn) was investigated by in situ variable-temperature (25) Mg, (67) Zn, (14) N, and (13) C solid-state NMR (SSNMR) spectroscopy. With decreasing temperature, a disorder-order transition of NH4 (+) cations causes a change in dielectric properties. It is thought that [NH4 ][Mg(HCOO)3 ] exhibits a higher transition temperature than [NH4 ][Zn(HCOO)3 ] due to stronger hydrogen-bonding interactions between NH4 (+) ions and framework oxygen atoms. (25) Mg and (67) Zn NMR parameters are very sensitive to temperature-induced changes in structure, dynamics, and dielectric behavior; stark spectral differences across the paraelectric-ferroelectric phase transition are intimately related to subtle changes in the local environment of the metal center. Although (25) Mg and (67) Zn are challenging nuclei for SSNMR experiments, the highly spherically symmetric metal-atom environments in [NH4 ][M(HCOO)3 ] give rise to relatively narrow spectra that can be acquired in 30-60 min at a low magnetic field of 9.4 T. Complementary (14) N and (13) C SSNMR experiments were performed to probe the role of NH4 (+) -framework hydrogen bonding in the paraelectric-ferroelectric phase transition. This multinuclear SSNMR approach yields new physical insights into the [NH4 ][M(HCOO)3 ] system and shows great potential for molecular-level studies on electric phenomena in a wide variety of MOFs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Glass Transitions and Low-Frequency Dynamics of Room-Temperature Ionic Liquids

International Nuclear Information System (INIS)

Yamamuro, O.; Inamura, Y.; Hayashi, S.; Hamaguchi, H.

2006-01-01

We have measured the heat capacity and neutrion quasi- and inelastic scattering spectra of some salts of 1-butyl-3-methylimidazolium ion bmim+, which is a typical cation of room-temperature ionic liquids, and its derivatives. The heat capacity measurements revealed that the room-temperature ionic liquids have glass transitions as molecular liquids. The temperature dependence of configurational entropy demonstrated that the room-temperature ionic liquids are 'fragile liquids'. Both heat capacity and inelastic neutron scattering data revealed that the glassy phases exhibit large low-energy excitations usually called 'boson peak'. The quasielastic neutron scattering data showed that so-called 'fast process' appears around Tg as in molecular and polymer glasses. The temperature dependence of the self-diffusion coefficient derived from the neutron scattering data indicated that the orientation of bmim+ ions and/or butyl-groups of bmim+ ions is highly disordered and very flexible in an ionic liquid phase

Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

Energy Technology Data Exchange (ETDEWEB)

Seyedhosseini, E., E-mail: Seyedhosseini@ua.pt; Ivanov, M. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Bdikin, I. [TEMA and Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro (Portugal); Vasileva, D. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kudryavtsev, A. [Moscow State Institute of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation); Rodriguez, B. J. [Conway Institute of Biomolecular and Biomedical Research and School of Physics, University College Dublin, Dublin (Ireland); Kholkin, A. L. [CICECO-Aveiro Institute of Materials and Department of Physics, University of Aveiro, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2015-08-21

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulse duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.

Microscopic observation of ferroelectric domains in SrTiO3 using birefringence imaging techniques under high electric fields

International Nuclear Information System (INIS)

Manaka, Hirotaka; Nozaki, Hirofumi; Miura, Yoko

2017-01-01

Phase transitions in SrTiO 3 between quantum paraelectric, coherent paraelectric, and electric-field-induced ferroelectric states are governed by tetragonal domains with quantum fluctuations. However, their characteristics are still unclear. To observe the electric-field-induced ferroelectric state using birefringence imaging techniques, we developed a suitable sample holder to apply high electric fields of up to E ≃ 5 kV/cm and temperatures down to T = 20 K. From birefringence imaging measurements of the ferroelectric LiNbO 3 with varying electric field, distributions of the electric field in the sample stage were found to be negligible. In SrTiO 3 , a huge-retardance area corresponding to the ferroelectric domains appears at E > 2 kV/cm and T ≤ 60 K even though the paraelectric domains partially remain. Furthermore, the fast-axis direction rotates by 90° at the ferroelectric phase transition because of an electrostrictive effect in ferroelectrics. The phase diagram of the critical electric field and temperature agrees with previous reports obtained from dielectric and neutron scattering measurements. (author)

Combined intrinsic elastocaloric and electrocaloric properties of ferroelectrics

Science.gov (United States)

Khassaf, H.; Patel, T.; Alpay, S. P.

2017-04-01

In multiferroic materials, adiabatic temperature changes can be obtained by the combined application of electric, stress, and magnetic fields. These external stimuli provide additional channels of entropy variations resulting in a multi-caloric response. In ferroelectric (FE) materials, caloric responses can be obtained with the application of electric and mechanical fields. Here, we compute the intrinsic elastocaloric and stress-mediated electrocaloric behavior of prototypical FE materials using the Landau-Devonshire theory of phase transformations with appropriate electrical and electro-mechanical boundary conditions. We show that an elastocaloric adiabatic temperature variation of 12.7 °C can be obtained in PbTiO3 with the application of uniaxial tensile stress of 500 MPa near its Curie point. This is 59% higher than its pure intrinsic electrocaloric response for an electric field difference of 100 kV/cm. Moreover, external stresses allow the maximum electro-elastocaloric response to be tuned towards room temperature. Our calculations show that relaxor FEs should exhibit large adiabatic temperature variations in relatively broad temperature ranges. These findings indicate that caloric responses in ferroic materials can be deterministically controlled and enhanced by utilizing a variety of external stimuli.

Facile room-temperature solution-phase synthesis of a spherical covalent organic framework for high-resolution chromatographic separation.

Science.gov (United States)

Yang, Cheng-Xiong; Liu, Chang; Cao, Yi-Meng; Yan, Xiu-Ping

2015-08-07

A simple and facile room-temperature solution-phase synthesis was developed to fabricate a spherical covalent organic framework with large surface area, good solvent stability and high thermostability for high-resolution chromatographic separation of diverse important industrial analytes including alkanes, cyclohexane and benzene, α-pinene and β-pinene, and alcohols with high column efficiency and good precision.

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

Science.gov (United States)

VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

1999-01-01

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

Stable Ferroelectric Behavior of Nb-Modified Bi0.5K0.5TiO3-Bi(Mg0.5Ti0.5)O3 Lead-Free Relaxor Ferroelectric Ceramics

Science.gov (United States)

Zaman, Arif; Malik, Rizwan Ahmed; Maqbool, Adnan; Hussain, Ali; Ahmed, Tanveer; Song, Tae Kwon; Kim, Won-Jeong; Kim, Myong-Ho

2018-03-01

Crystal structure, dielectric, ferroelectric, piezoelectric, and electric field-induced strain properties of lead-free Nb-modified 0.96Bi0.5K0.5TiO3-0.04Bi(Mg0.5Ti0.5)O3 (BKT-BMT) piezoelectric ceramics were investigated. Crystal structure analysis showed a gradual phase transition from tetragonal to pseudocubic phase with increasing Nb content. The optimal piezoelectric property of small-signal d 33 was enhanced up to ˜ 68 pC/N with a lower coercive field ( E c) of ˜ 22 kV/cm and an improved remnant polarization ( P r) of ˜ 13 μC/cm2 for x = 0.020. A relaxor-like behavior with a frequency-dependent Curie temperature T m was observed, and a high T m around 320°C was obtained in the investigated system. This study suggests that the ferroelectric properties of BKT-BMT was significantly improved by means of Nb substitution. The possible shift of depolarization temperature T d toward high temperature T m may have triggered the spontaneous relaxor to ferroelectric phase transition with long-range ferroelectric order without any traces of a nonergodic relaxor state in contradiction with Bi0.5Na0.5TiO3-based systems. The possible enhancement in ferroelectric and piezoelectric properties near the critical composition x = 0.020 may be attributed to the increased anharmonicity of lattice vibrations which may facilitate the observed phase transition from a low-symmetry tetragonal to a high-symmetry cubic phase with a decrease in the lattice anisotropy of an undoped sample. This highly flexible (at a unit cell level) narrow compositional range triggers the enhancement of d 33 and P r values.

Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi{sub 4}Ti{sub 4}O{sub 15}

Energy Technology Data Exchange (ETDEWEB)

Peng Dengfeng [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Zou Hua; Wang Xusheng; Yao Xi [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Xu Chaonan [National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Lin Jian; Sun Tiantuo [School of Material Science and Engineering, Tongji University, 4800 Cao' an Highway, Shanghai 201804 (China)

2012-12-15

Er{sup 3+} doped SrBi{sub 4}Ti{sub 4}O{sub 15} (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er{sup 3+} concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} to {sup 4}I{sub 15/2}, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d{sub 33} compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d{sub 33}. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.

Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

Science.gov (United States)

Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

2016-12-01

With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

Ionothermal synthesis of β-NH4AlF4 and the determination by single crystal X-ray diffraction of its room temperature and low temperature phases

International Nuclear Information System (INIS)

Parnham, Emily R.; Slawin, Alex M.Z.; Morris, Russell E.

2007-01-01

β-NH 4 AlF 4 has been synthesised ionothermally using 1-ethyl-3-methylimidazolium hexafluorophosphate as solvent and template provider. β-NH 4 AlF 4 crystals were produced which were suitable for single crystal X-ray diffraction analysis. A phase transition occurs between room temperature (298 K) and low temperature (93 K) data collections. At 298 K the space group=I4/mcm (no. 140), α=11.642(5), c=12.661(5) A, Z=2 (10NH 4 AlF 4 ), wR(F 2 )=0.1278, R(F)=0.0453. At 93 K the space group=P4 2 /ncm (no. 138), α=11.616(3), c=12.677(3) A, Z=2 (10NH 4 AlF 4 ), wR(F 2 )=0.1387, R(F)=0.0443. The single crystal X-ray diffraction study of β-NH 4 AlF 4 shows the presence of two different polymorphs at low and room temperature, indicative of a phase transition. The [AlF 4/2 F 2 ] - layers are undisturbed except for a small tilting of the AlF 6 octahedra in the c-axis direction. -Ionothermal synthesis, the use of an ionic liquid as the solvent in materials preparation, has been used to prepare β-NH 4 AlF 4 , and structural characterisation indicates that there are two versions of the structure, a low temperature primitive phase at 93 K and a high temperature body-centered phase at 298 K

Interface engineered ferrite@ferroelectric core-shell nanostructures: A facile approach to impart superior magneto-electric coupling

Science.gov (United States)

Abraham, Ann Rose; Raneesh, B.; Das, Dipankar; Oluwafemi, Oluwatobi Samuel; Thomas, Sabu; Kalarikkal, Nandakumar

2018-04-01

The electric field control of magnetism in multiferroics is attractive for the realization of ultra-fast and miniaturized low power device applications like nonvolatile memories. Room temperature hybrid multiferroic heterostructures with core-shell (0-0) architecture (ferrite core and ferroelectric shell) were developed via a two-step method. High-Resolution Transmission Electron Microscopy (HRTEM) images confirm the core-shell structure. The temperature dependant magnetization measurements and Mossbauer spectra reveal superparamagnetic nature of the core-shell sample. The ferroelectric hysteresis loops reveal leaky nature of the samples. The results indicate the promising applications of the samples for magneto-electric memories and spintronics.

Ferroelectric and octahedral tilt twin disorder and the lead-free piezoelectric, sodium potassium niobate system

International Nuclear Information System (INIS)

Schiemer, Jason; Withers, Ray L.; Liu, Yun; Yi, Zhiguo

2012-01-01

Using electron diffraction, trends in the local structural behaviour of the K x Na 1−x NbO 3 (KNN x) ‘solid solution’ system are investigated and interpreted using an order/disorder based theoretical framework. At room temperature, electron diffraction shows a single plane of transverse polarised, diffuse intensity perpendicular to [0 1 0] p ⁎ (p for parent sub-structure) across the entire phase diagram, indicative of ferroelectric disorder along the [0 1 0] p direction co-existing with long range ferroelectric order along the orthogonal [1 0 0] p and [0 0 1] p directions. An additional characteristic pattern of diffuse scattering is also observed, involving rods of diffuse intensity running along the [1 0 0] p * and [0 0 1] p * directions of the perovskite sub-structure and indicative of octahedral tilt disorder about the [1 0 0] p and [0 0 1] p axes co-existing with long range ordered octahedral tilting around the [0 1 0] p direction. A possible crystal chemical explanation for the existence of this latter octahedral tilt disorder is explored through bond valence sum calculations. The possible influence of both types of disorder on the previously refined, room temperature space group/s and average crystal structure/s is examined. - Graphical abstract: [−3,0.−1]p zone axis EDP of K 0.46 Na 0.54 NbO 3 indexed according to both the relevant Pcm21 space groups (no subscripts) and the parent perovskite subcell (denoted by a subscript p). Highlights: ► Characterises ferroelectric and octahedral tilt disorder in the KNN solid solution. ► Discusses the possible driving forces for this disorder. ► Discusses the implications of this disorder for physical properties. ► Discusses the effects of this disorder on powder diffraction data.

Giant electrocaloric effect in a cracked ferroelectrics

Science.gov (United States)

Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

2018-04-01

The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

Phase segregation and dielectric, ferroelectric, and piezoelectric properties of MgO-doped NBT-BT lead-free ferroelecric ceramics

Science.gov (United States)

Liu, Gang; Wang, Ziyang; Zhang, Leiyang; Shi, Wenjing; Jing, Jiayi; Chen, Yi; Liu, Hongbo; Yan, Yan

2018-03-01

MgO doped NBT-BT ceramics were prepared by the conventional electroceramic processing. The effects of MgO on the phase, microstructures and electrical properties of NBT-BT ceramics were systematically investigated. When doping content is more than 1%, a second phase appeared, which has great effect on dielectric, ferroelectric, and piezoelectric properties, such as the T F-R peak weakened, moved to the higher temperature, and eventually disappeared. When the doping content is above 1.5%, the ceramic samples show a strong relaxation. The detailed analysis and discussion can be found within this study.

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Science.gov (United States)

Kim, Si Joon; Narayan, Dushyant; Lee, Jae-Gil; Mohan, Jaidah; Lee, Joy S.; Lee, Jaebeom; Kim, Harrison S.; Byun, Young-Chul; Lucero, Antonio T.; Young, Chadwin D.; Summerfelt, Scott R.; San, Tamer; Colombo, Luigi; Kim, Jiyoung

2017-12-01

We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (˜1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

Science.gov (United States)

Layek, Samar; Verma, H. C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni1-xMnxO (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum.

Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals

Science.gov (United States)

Liubachko, V.; Shvalya, V.; Oleaga, A.; Salazar, A.; Kohutych, A.; Pogodin, A.; Vysochanskii, Yu. M.

2017-12-01

Thermal diffusivity and thermal conductivity have been studied for the layered crystals CuInP2S6, CuInP2Se6 from 30 K to 350 K, showing a relevant thermal anisotropy. Heat is much more efficiently transferred within the layers than perpendicular to them. The ferrielectric transition in CuInP2S6 is proven to be clearly first order while the ferroelectric one in CuInP2Se6 has a weak first order character. The behavior of the thermal conductivity as a function of temperature in the ferroelectric phases shows that heat conduction is phonon driven. Disorder in the paraelectric phases due to hopping motions of Cu ions significantly reduces the thermal conductivity to extremely low values.

Enhanced magnetic and ferroelectric properties in scandium doped nano Bi2Fe4O9

International Nuclear Information System (INIS)

Dutta, Dimple P.; Sudakar, C.; Mocherla, Pavana S.V.; Mandal, Balaji P.; Jayakumar, Onnatu D.; Tyagi, Avesh K.

2012-01-01

In this study we report the synthesis of undoped and Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles using sonochemical technique. X-ray diffraction reveals that all samples are single phase with no impurities detected. EDS analysis was done to confirm the extent of Sc 3+ doping in the samples. The size and morphology of the nanoparticles have been analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Bi 2 Fe 4 O 9 nanoparticles show a weak ferromagnetic behavior at room temperature, which is quite different from the linear M–H relationship reported for bulk Bi 2 Fe 4 O 9 . A magnetization of 0.144 μB/f.u. is obtained at 300 K, which is mainly attributed to the uncompensated moments at the disordered particle surface resulting from the reduced coordination of the surface spins, arising due to lattice strain or oxygen deficiency. Addition of Sc 3+ dopant in varying concentrations in these Bi 2 Fe 4 O 9 nanoparticles, improves their magnetic as well as ferroelectric properties. The leakage current is considerably reduced and electric polarization increases significantly in case of Bi 2 Fe 4(1−x) Sc x O 9 (x = 0.1) nanoparticles. Thus it can be inferred that Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles shows promise as good multiferroic materials. -- Graphical abstract: Undoped and Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles have been synthesized using sonochemical technique. The bi-functionalities of Sc 3+ doped Bi 2 Fe 4 O 9 nanoparticles have been demonstrated. The Bi 2 Fe 4(1−x) Sc x O 9 (x = 0.1) nanoparticles showed enhanced magnetic and ferroelectric properties with considerably less lossy characteristics compared to the bulk Bi 2 Fe 4 O 9 . Highlights: ► Phase pure Bi 2 Fe 4 O 9 nanostructures synthesized using a facile sonochemical technique. ► Nanoparticles show a weak ferromagnetic order at room temperature. ► Sc 3+ doping in Bi 2 Fe 4 O 9 nanoparticles alters their magnetic and ferroelectric properties. ► A

Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

Science.gov (United States)

Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

2015-03-11

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

distribution of Mn substituting for Zn a 2⁺ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2⁺ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Ferroelectric, magnetic and structural studies of the Bi4LaSmFe2Ti3O18 multiferroic material

International Nuclear Information System (INIS)

Alarcón-Suesca, C.E.; Cardona-Vásquez, J.A.; Salcedo-Fontecha, J.P.; Vargas-Jiménez, A.; Landínez-Téllez, D.A.; Roa-Rojas, J.

2014-01-01

We report the synthesis and characterization of the new Bi 4 LaSmFe 2 Ti 3 O 18 ferroelectric ceramic. X-ray characterization reveals reflections for layered perovskite Aurivillius system. Rietveld analyses of the powder pattern shows that Bi 4 LaSmFe 2 Ti 3 O 18 crystallizes in orthorhombic structure, which corresponds to the space group F2/mm (#42), with lattice parameters a=5.4240(16) Ǻ, b=5.4078(23) Ǻ and c=50.2440(12) Ǻ. Scanning electron microscopy (SEM) reveals the formation of dense material with plate-like morphology. Electric polarization curves were measured by means of a radiant ferroelectric tester, at room temperature in bulk samples and exhibit an intrinsic ferroelectric response, even at low applied fields. Measurements of the magnetization as a function of temperature after Zero field cooling and field cooling were carried out by using a MPMS Quantum Design SQUID magnetometer. We found an effective magnetic moment of 7.95 µB, which is 95.8% in agreement with the expected value calculated from Hund's rules. Magnetization curves as the function of applied fields reveal an incipient hysteretic behavior at room temperature

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Layek, Samar, E-mail: samarlayek@gmail.com; Verma, H.C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni{sub 1−x}Mn{sub x}O (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.

Room temperature ferromagnetism in Mn-doped NiO nanoparticles

International Nuclear Information System (INIS)

Layek, Samar; Verma, H.C.

2016-01-01

Mn-doped NiO nanoparticles of the series Ni_1_−_xMn_xO (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.

Antiferroelectric Nature of CH3NH3PbI3-xClx Perovskite and Its Implication for Charge Separation in Perovskite Solar Cells

Science.gov (United States)

Sewvandi, Galhenage A.; Kodera, Kei; Ma, Hao; Nakanishi, Shunsuke; Feng, Qi

2016-07-01

Perovskite solar cells (PSCs) have been attracted scientific interest due to high performance. Some researchers have suggested anomalous behavior of PSCs to the polarizations due to the ion migration or ferroelectric behavior. Experimental results and theoretical calculations have suggested the possibility of ferroelectricity in organic-inorganic perovskite. However, still no studies have been concretely discarded the ferroelectric nature of perovskite absorbers in PSCs. Hysteresis of P-E (polarization-electric field) loops is an important evidence to confirm the ferroelectricity. In this study, P-E loop measurements, in-depth structural study, analyses of dielectric behavior and the phase transitions of CH3NH3PbI3-xClx perovskite were carried out and investigated. The results suggest that CH3NH3PbI3-xClx perovskite is in an antiferroelectric phase at room temperature. The antiferroelectric phase can be switched to ferroelectric phase by the poling treatment and exhibits ferroelectric-like hysteresis P-E loops and dielectric behavior around room temperature; namely, the perovskite can generate a ferroelectric polarization under PSCs operating conditions. Furthermore, we also discuss the implications of ferroelectric polarization on PSCs charge separation.

High temperature dielectric and ferroelectric properties of La-modified PbTiO3 nanoceramics

International Nuclear Information System (INIS)

Shukla, Archana; Shukla, Namrata; Choudhary, R.N.P.

2016-01-01

Ferroelectric materials with high Curie temperature (higher than 300 °C) are highly desirable to construct transducers for high-temperature piezoelectric applications. Among the ferroelectric materials, PbTiO 3 (PT) is considered to be one of the most promising materials. However, the fabrication of high density pure PT ceramics is very difficult because of the highly anisotropy, which limited the use in piezoelectric transducers. Usually, substitutions towards A or B-site of PT may reduce the high anisotropy. The present work reports the experimental investigations on the effect of lanthanum (La 3+ ) substitution on the structural, dielectric and piezoelectric properties of lead titanate (PT) ceramic at high-temperature (RT ∼ 600°C)

Room-Temperature Voltage Tunable Phonon Thermal Conductivity via Reconfigurable Interfaces in Ferroelectric Thin Films

Energy Technology Data Exchange (ETDEWEB)

Ihlefeld, Jon F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Foley, Brian M. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering; Scrymgeour, David A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Michael, Joseph R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); McKenzie, Bonnie B. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Medlin, Douglas L. [Sandia National Laboratories, Livermore, CA; Wallace, Margeaux [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Trolier-McKinstry, Susan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Hopkins, Patrick E. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering

2015-02-19

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. Here, we demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr_0.3Ti_0.7)O₃ film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

International Nuclear Information System (INIS)

Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

2007-01-01

The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

Ultrafast Electric Field Pulse Control of Giant Temperature Change in Ferroelectrics

Science.gov (United States)

Qi, Y.; Liu, S.; Lindenberg, A. M.; Rappe, A. M.

2018-01-01

There is a surge of interest in developing environmentally friendly solid-state-based cooling technology. Here, we point out that a fast cooling rate (≈1011 K /s ) can be achieved by driving solid crystals to a high-temperature phase with a properly designed electric field pulse. Specifically, we predict that an ultrafast electric field pulse can cause a giant temperature decrease up to 32 K in PbTiO3 occurring on few picosecond time scales. We explain the underlying physics of this giant electric field pulse-induced temperature change with the concept of internal energy redistribution: the electric field does work on a ferroelectric crystal and redistributes its internal energy, and the way the kinetic energy is redistributed determines the temperature change and strongly depends on the electric field temporal profile. This concept is supported by our all-atom molecular dynamics simulations of PbTiO3 and BaTiO3 . Moreover, this internal energy redistribution concept can also be applied to understand electrocaloric effect. We further propose new strategies for inducing giant cooling effect with ultrafast electric field pulse. This Letter offers a general framework to understand electric-field-induced temperature change and highlights the opportunities of electric field engineering for controlled design of fast and efficient cooling technology.

Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

Science.gov (United States)

He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

2010-09-01

We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

Isothermal phase transition and the transition temperature limitation in the lead-free (1-x)Bi0.5Na0.5TiO3-xBaTiO3 system

International Nuclear Information System (INIS)

Zhang, Dawei; Yao, Yonggang; Fang, Minxia; Luo, Zhengdong; Zhang, Lixue; Li, Linglong; Cui, Jian; Zhou, Zhijian; Bian, Jihong; Ren, Xiaobing; Yang, Yaodong

2016-01-01

Most ferroelectric transitions occur ultrafast and are time independent. However, here in (1-x) (Bi 0.5 Na 0.5 )TiO 3 -xBaTiO 3 , we have found a ferroelectric phase transition induced solely by increasing waiting time at certain temperatures (isothermal phase transition). Through cooling, a unique metastable state between a relaxor ferroelectric and a ferroelectric is unveiled, which in essence is initially a short-range ordered glassy state and then can evolve into a long-range ordered ferroelectric state through the isothermal process. It is also found that these isothermal ferroelectric transitions only occur within a specific temperature region with different waiting time needed. These features of isothermal phase transition can be understood by Landau theory analysis with the consideration of random defects as a competition between the thermodynamically favored long-range ordered state and the kinetically frustrated short-range ordered glassy state from random defects. This study offers a precise experimental as well as a phenomenological interpretation on the isothermal ferroelectric transition, which may help to further clarify the intricate structure-property relationship in this important lead-free piezoelectric material and other related systems.

Characterization of Phase Transitions in PZT Ferroelectric films with spectral Ellipsometry

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

11-12, - (2002), s. 377-380 ISSN 0447-6441 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010921 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BH - Optics, Masers, Lasers

Experimental (155 K) and predicted (151 K) Curie temperature (Tc) of K2ZnBr4: structural confirmation of ferroelectric state below Tc

International Nuclear Information System (INIS)

Abrahams, S.C.

1994-01-01

The temperature T c at which K 2 ZnBr 4 is predicted to transform from the paraelectric to the ferroelectric phase is 151 (19) K, based on the crystal structure determinations at 291 and 144 K by Fabry, Breczewski, Zuniga and Arnaiz and the Abrahams-Kurtz-Jamieson relationship. A dielectric and heat-capacity anomaly in this material at 155 K has been reported elsewhere. The locations reported for the ZnBr 2- 4 and K + ions fulfill the requirements of mirror plane symmetry above T c ; ionic displacements along the polar direction that approach but do not exceed 0.1 A and that violate the mirror symmetry on cooling through T c form the basis of the prediction and satisfy the structural criteria for ferroelectricity in the phase below the transition. (orig.)

Electrical properties and Raman studies of phase transitions in ferroelectric [N(CH3)4]2CoCl2Br2

Science.gov (United States)

Ben Mohamed, C.; Karoui, K.; Bulou, A.; Ben Rhaiem, A.

2018-03-01

The present paper accounted for the synthesis, electric properties and vibrational spectroscopy of [N(CH3)4]2CoCl2Br2. The dielectric spectra were measured in the frequency range 10-1-105 Hz and temperature interval from 223 to 393 K. The dielectical properties confirm the ferroelectric-paraelectric phase transition at 290 K, which is reported by Abdallah Ben Rhaiem et al. (2013). The equivalent circuit based on the Z-View-software was proposed and the conduction mechanisms were determined. The obtained results have been discussed in terms of the correlated barrier hopping model (CBH) in phase I and non-overlapping small polaron tunneling model (NSPT) in phases II and III. Raman spectra as function temperature have been used to characterize the phase transitions and their nature, which indicates a change of the some peak near the transitions phase.

Finite Atwood Number Effects on Deceleration-Phase Instability in Room-Temperature Direct-Drive Implosions

Science.gov (United States)

Miller, S.; Knauer, J. P.; Radha, P. B.; Goncharov, V. N.

2017-10-01

Performance degradation in direct-drive inertial confinement fusion implosions can be caused by several effects, one of which is Rayleigh-Taylor (RT) instability growth during the deceleration phase. In room-temperature plastic target implosions, this deceleration-phase RT growth is enhanced by the density discontinuity and finite Atwood numbers at the fuel-pusher interface. For the first time, an experimental campaign at the Omega Laser Facility systematically varied the ratio of deuterium-to-tritium (D-to-T) within the DT gas fill to change the Atwood number. The goal of the experiment was to understand the effects of Atwood number variation on observables like apparent ion temperature, yield, and variations in areal density and bulk fluid motion, which lead to broadening of neutron spectra along different lines of sight. Simulations by the hydrodynamic codes LILAC and DRACO were used to study growth rates for different D-to-T ratios and identify observable quantities effected by Atwood number variation. Results from simulations and the experiment are presented. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

Materials for room temperature magnetic refrigeration

Energy Technology Data Exchange (ETDEWEB)

Rosendahl Hansen, B.

2010-07-15

Magnetic refrigeration is a cooling method, which holds the promise of being cleaner and more efficient than conventional vapor-compression cooling. Much research has been done during the last two decades on various magnetic materials for this purpose and today a number of materials are considered candidates as they fulfill many of the requirements for a magnetic refrigerant. However, no one material stands out and the field is still active with improving the known materials and in the search for a better one. Magnetic cooling is based on the magnetocaloric effect, which causes a magnetic material to change its temperature when a magnetic field is applied or removed. For room temperature cooling, one utilizes that the magnetocaloric effect peaks near magnetic phase transitions and so the materials of interest all have a critical temperature within the range of 250 - 310 K. A magnetic refrigerant should fulfill a number of criteria, among these a large magnetic entropy change, a large adiabatic temperature change, preferably little to no thermal or magnetic hysteresis and the material should have the stability required for long term use. As the temperature range required for room temperature cooling is some 40 - 50 K, the magnetic refrigerant should also be able to cover this temperature span either by exhibiting a very broad peak in magnetocaloric effect or by providing the opportunity for creating a materials series with varying transition temperatures. (Author)

Ferroelectric Zinc Oxide Nanowire Embedded Flexible Sensor for Motion and Temperature Sensing.

Science.gov (United States)

Shin, Sung-Ho; Park, Dae Hoon; Jung, Joo-Yun; Lee, Min Hyung; Nah, Junghyo

2017-03-22

We report a simple method to realize multifunctional flexible motion sensor using ferroelectric lithium-doped ZnO-PDMS. The ferroelectric layer enables piezoelectric dynamic sensing and provides additional motion information to more precisely discriminate different motions. The PEDOT:PSS-functionalized AgNWs, working as electrode layers for the piezoelectric sensing layer, resistively detect a change of both movement or temperature. Thus, through the optimal integration of both elements, the sensing limit, accuracy, and functionality can be further expanded. The method introduced here is a simple and effective route to realize a high-performance flexible motion sensor with integrated multifunctionalities.

Ferroelectrics principles, structure and applications

CERN Document Server

Merchant, Serena

2014-01-01

Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

Diffusionless phase transitions and related structures in oxides

International Nuclear Information System (INIS)

Boulesteix, C.

1992-01-01

The relative importance of oxides in the field of materials science has been spectacularly increasing during the last twenty years. First the study of ferroelectrics kept the attention of scientists. Nevertheless this domain is far from being worked out and a lot of new results and of new fields of interest were recently discovered. Other ferroic oxides, especially ferroelastics, have also been the subject of a very great number of new results. In these cases the properties of oxides are at room temperature very tightly related to the phase transition that is generally occurring a few hundred of degrees above this room temperature. In many other cases also properties of oxides can be related to the existence of a phase transition or to a rather similar phenomenon. This book has been specially devoted to the study of the properties of oxides which are in some way related to the existence of a phase transition. The first chapters are focussed on general considerations: the first one is devoted to a general study of phase transitions, the second one to the twinning phenomenon which is of special interest for many oxides. Chapters 3 and 4 are focussed on ferroelectric and ferroelastic materials. These four chapters consitute the first part of the book. Chapters 5 to 8 are devoted to the study of oxides of special interest which have some of their properties related to a phase transition or to a rather similar phenomenon: rare earth oxides, oxides with a diffuse phase transition, zirconia and alumina systems, tungsten oxides and their relatives. These four chapters constitute the second part of the book. (orig.)

Ferroelectric phase transition in hydrogen-bonded 2-aminopyridine phosphate (NC sub 4 H sub 4 NH sub 2)centre dot H sub 3 PO sub 4

CERN Document Server

Czapla, Z; Waskowska, A

2003-01-01

A new crystal of 2-aminopyridine phosphate (NC sub 4 H sub 4 NH sub 2)centre dot H sub 3 PO sub 4 has been grown and its x-ray structure and physical properties were studied. At room temperature the crystals are monoclinic, space group C2/c. The flat 2-aminopyridine cations are hydrogen bonded to the anionic [PO sub 4 ] groups. The interesting feature of the crystal structure is the three-dimensional network of hydrogen bonds including, among others, two strong, symmetrical O centre dot centre dot centre dot H, H centre dot centre dot centre dot O interactions with disordered proton locations. Symmetrically related PO sub 4 anions linked through these protons form infinite (PO sub 4) subinfinity chains along the crystal a-axis. The anomalies in the temperature dependence of the electric permittivity showed that the crystal undergoes ferroelectric phase transition at T sub c = 103.5 K. The spontaneous polarization takes place along the crystal a-axis, being parallel to the chains of the hydrogen-bonded PO sub ...

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Science.gov (United States)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

International Nuclear Information System (INIS)

Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

2004-01-01

We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

High-performance ferroelectric memory based on phase-separated films of polymer blends

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance ferroelectric memory based on phase-separated films of polymer blends

KAUST Repository

Khan, Yasser

2013-10-29

High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic refrigeration--towards room-temperature applications

International Nuclear Information System (INIS)

Brueck, E.; Tegus, O.; Li, X.W.; Boer, F.R. de; Buschow, K.H.J.

2003-01-01

Modern society relies very much on readily available cooling. Magnetic refrigeration based on the magneto-caloric effect (MCE) has become a promising competitive technology for the conventional gas-compression/expansion technique in use today. Recently, there have been two breakthroughs in magnetic-refrigeration research: one is that American scientists demonstrated the world's first room-temperature, permanent-magnet, magnetic refrigerator; the other one is that we discovered a new class of magnetic refrigerant materials for room-temperature applications. The new materials are manganese-iron-phosphorus-arsenic (MnFe(P,As)) compounds. This new material has important advantages over existing magnetic coolants: it exhibits a huge MCE, which is larger than that of Gd metal; and its operating temperature can be tuned from about 150 to about 335 K by adjusting the P/As ratio. Here we report on further improvement of the materials by increasing the Mn content. The large entropy change is attributed to a field-induced first-order phase transition enhancing the effect of the applied magnetic field. Addition of Mn reduces the thermal hysteresis, which is intrinsic to the first-order transition. This implies that already moderate applied magnetic fields of below 2 T may suffice

Variation of the energy gap of the SbSI crystals at ferroelectric phase transition

International Nuclear Information System (INIS)

Audzijonis, A.; Zaltauskas, R.; Zigas, L.; Vinokurova, I.V.; Farberovich, O.V.; Pauliukas, A.; Kvedaravicius, A.

2006-01-01

Variation of the forbidden gap of SbSI crystals in the phase transition region is analyzed on the pseudopotential method for antiferroelectric and ferroelectric phase. The band gap at several special points of the Brillouin zone and some characteristic parameters of the band are considered. During the phase transition, the most significant changes are observed with the valence band top at points Q, C, R, H, E and with the conduction band bottom at points H, T and E of the Brillouin zone. At the ferroelectric phase transition, the valence and conduction bands change due to displacement of Sb and S atoms with respect to I and with respect to each other as a result of order-disorder and displacement-type transition. The obtained band gap values agree quite well with the experiment. This is apparently due to application of neutral rather than ionic atomic functions and inclusion of sufficiently many plane waves in the basis set for calculation

Effect of calcination temperature on formaldehyde oxidation performance of Pt/TiO2 nanofiber composite at room temperature

Science.gov (United States)

Xu, Feiyan; Le, Yao; Cheng, Bei; Jiang, Chuanjia

2017-12-01

Catalytic oxidation at room temperature over well-designed catalysts is an environmentally friendly method for the abatement of indoor formaldehyde (HCHO) pollution. Herein, nanocomposites of platinum (Pt) and titanium dioxide (TiO2) nanofibers with various phase compositions were prepared by calcining the electrospun TiO2 precursors at different temperatures and subsequently depositing Pt nanoparticles (NPs) on the TiO2 through a NaBH4-reduction process. The phase compositions and structures of Pt/TiO2 can be easily controlled by varying the calcination temperature. The Pt/TiO2 nanocomposites showed a phase-dependent activity towards the catalytic HCHO oxidation. Pt/TiO2 containing pure rutile phase showed enhanced activity with a turnover frequency (TOF) of 16.6 min-1 (for a calcination temperature of 800 °C) as compared to those containing the anatase phase or mixed phases. Density functional theory calculation shows that TiO2 nanofibers with pure rutile phase have stronger adsorption ability to Pt atoms than anatase phase, which favors the reduction of Pt over rutile phase TiO2, leading to higher contents of metallic Pt in the nanocomposite. In addition, the Pt/TiO2 with rutile phase possesses more abundant oxygen vacancies, which is conducive to the activation of adsorbed oxygen. Consequently, the Pt/rutile-TiO2 nanocomposite exhibited better catalytic activity towards HCHO oxidation at room temperature.

Photoinduced Domain Pattern Transformation in Ferroelectric-Dielectric Superlattices

Energy Technology Data Exchange (ETDEWEB)

Ahn, Youngjun; Park, Joonkyu; Pateras, Anastasios; Rich, Matthew B.; Zhang, Qingteng; Chen, Pice; Yusuf, Mohammed H.; Wen, Haidan; Dawber, Matthew; Evans, Paul G.

2017-07-01

The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.

Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

Science.gov (United States)

Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

2015-11-01

Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

Influence of KF substitution on the ferroelectric phase transition of lead titanate single crystals studied by Brillouin light scattering

Directory of Open Access Journals (Sweden)

Seonhyeop Shin

2015-06-01

Full Text Available The elastic properties of KF-substituted perovskite lead titanate (PbTiO3 were investigated by dielectric measurements and Brillouin light scattering. The ferroelectric phase transition occurred at substantially lower temperature due to KF substitution, which was attributed to the modification of the covalency in Pb–O and Ti–O bonds. The longitudinal acoustic (LA mode of KF-substituted PbTiO3 showed a frequency softening in the paraelectric phase, which was accompanied by increasing acoustic damping. This indicated that polarization fluctuations responsible for the acoustic anomalies were enhanced by KF substitution.

Impact of nanoconfinement on the diisopropylammonium chloride (C6H16ClN) organic ferroelectric

Science.gov (United States)

Baryshnikov, S. V.; Charnaya, E. V.; Milinskiy, A. Yu.; Parfenov, V. A.; Egorova, I. V.

2018-03-01

The dielectric studies of diisopropylammonium chloride (DIPAC) nanoparticles embedded into opal and MCM-41 silica matrices are presented. It is shown that the ferroelectric phase transition shifts to low temperatures and broadens for DIPAC within the opal pores compared to bulk. The thermal hysteresis of the transition increases under opal nanoconfinement. No anomalies of the permittivity relevant to the ferroelectric transition are observed for DIPAC within the MCM-41 molecular sieves likely due to formation of the amorphous phase.

Dielectric properties of KDP-type ferroelectric crystals in the ...

Indian Academy of Sciences (India)

Hamiltonian for KDP-type ferroelectrics, expressions for field-dependent shift, width, ... For the calculation, method of statistical double-time temperature- ... roelectric phase transition and dielectric behaviour of KDP and its isomorphs is .... The dissipation of power in dielectric material can conveniently be expressed as.

Structural and ferroelectric properties of Sr1−xBaxBi2Nb2O9 thin films obtained by dip-coating

Directory of Open Access Journals (Sweden)

Y. González-Abreu

2017-10-01

Full Text Available The paper presents the structural and ferroelectric results for Sr1−xBaxBi2Nb2O9(x=0.30; 0.85 thin films, which were obtained by using dip-coating. The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples. The films were deposited at room temperature on Fluorine-doped Tin Oxide (FTO substrates and submitted to a heat treatment for crystallization. The films were characterized by using scanning microscopy electronic, energy dispersive spectroscopy and ellipsometry. Hysteresis ferroelectric loops were obtained, at room temperature, by using a Sawyer-Tower circuit at several frequencies. A well-defined grain structure was observed for both compositions. The energy dispersive spectroscopy (EDS measurements revealed the presence of the corresponding elements from the chemical composition of the ceramic systems. The band-gap energy was around 3.3eV for both samples. Typical hysteresis loops for normal and relaxor ferroelectrics were obtained for x=0.30 and 0.85, respectively.

Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

Science.gov (United States)

Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao

2018-04-01

Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.

Development and application of an empirical formula for the high temperature behavior of ferroelectric ceramics switched by electric field at room temperature

Directory of Open Access Journals (Sweden)

Dae Won Ji

2017-05-01

Full Text Available The strain changes during temperature rise of a poled lead titanate zirconate rectangular parallelepiped switched by electric field at room temperature are obtained by integrating thermal expansion coefficients that are measured using an invar-specimen. By estimating and analyzing pyroelectric and thermal expansion coefficients, first-order differential equations are constructed for polarization and strain changes during temperature increase. The solutions to the differential equations are found and used to calculate the high temperature behavior of the materials. It is shown that the predictions are well compared with measured responses. Finally, the developed formulae are applied to calculate strain butterfly loops from a polarization hysteresis loop at a high temperature.

Effects of Er3+ and Pr3+ Substitution on Structural, Dielectric, Ferroelectric and Photoluminescence Properties of the BaTi0.9Zr0.1O3 Ceramic

Science.gov (United States)

Zouari, I.; Sassi, Z.; Seveyrat, L.; Perrin, V.; Zghal, S.; Abdelmoula, N.; Lebrun, L.; Khemakhem, H.

2017-07-01

BaTi0.9Zr0.1O3 (BZT), Ba1- x Ln2 x/3□ x/3Ti0.9Zr0.1O3 (with x = 0.5% mol and Ln = Er3+) (BZT-Er) and Ba1- x Ln2 x/3□ x/3Ti0.9Zr0.1O3 (with x = 0.5% mol and Ln = Pr3+) (BZT-Pr) were prepared via the conventional solid-state reaction method. X-ray diffraction showed that all these ceramics were in the single perovskite phase at room temperature (RT). The temperature dependence of dielectric behavior was investigated in the temperature range 25-225°C and exhibited a classical ferroelectric behavior. A slight decrease of the Curie temperature ( T C) with Pr3+ and Er3+ substitution was observed in addition to an increase in the maximum dielectric permittivity ( \\varepsilon_{r {max} }^' }} ) of about 40% for the BZT-Er. At RT, the ferroelectric and piezoelectric coefficients were decreased for BZT-Pr, but were maintained for BZT-Er with a piezoelectric coefficient ( d 33) of 185 pC/N, a planar electromechanical coupling factor of 30%, and a remanent polarization of 11.6 μC/cm2. The Raman bands as a function of temperature confirmed the paraelectric-ferroelectric phase transition of all those ceramics. The photoluminescence spectra showed that strong red (615 nm and 645 nm) and bright green (523 nm and 545 nm) emission bands were obtained, under excitation by laser at 488 nm at RT, for BZT-Pr and BZT-Er, respectively. These multifunctional materials showed a significant technological promise in coupling device applications.

Phase transitions and domain structures in multiferroics

Science.gov (United States)

Vlahos, Eftihia

2011-12-01

Thin film ferroelectrics and multiferroics are two important classes of materials interesting both from a scientific and a technological prospective. The volatility of lead and bismuth as well as environmental issues regarding the toxicity of lead are two disadvantages of the most commonly used ferroelectric random access memory (FeRAM) materials such as Pb(Zr,Ti)O3 and SrBi2Ta2O9. Therefore lead-free thin film ferroelectrics are promising substitutes as long as (a) they can be grown on technologically important substrates such as silicon, and (b) their T c and Pr become comparable to that of well established ferroelectrics. On the other hand, the development of functional room temperature ferroelectric ferromagnetic multiferroics could lead to very interesting phenomena such as control of magnetism with electric fields and control of electrical polarization with magnetic fields. This thesis focuses on the understanding of material structure-property relations using nonlinear optical spectroscopy. Nonlinear spectroscopy is an excellent tool for probing the onset of ferroelectricity, and domain dynamics in strained ferroelectrics and multiferroics. Second harmonic generation was used to detect ferroelectricity and the antiferrodistortive phase transition in thin film SrTiO3. Incipient ferroelectric CaTiO3 has been shown to become ferroelectric when strained with a combination of SHG and dielectric measurements. The tensorial nature of the induced nonlinear polarization allows for probing of the BaTiO3 and SrTiO3 polarization contributions in nanoscale BaTiO3/SrTiO3 superlattices. In addition, nonlinear optics was used to demonstrate ferroelectricity in multiferroic EuTiO3. Finally, confocal SHG and Raman microscopy were utilized to visualize polar domains in incipient ferroelectric and ferroelastic CaTiO3.

Dynamics of nonlinear dielectric susceptibility of ferroelectrics near the morphotropic phase boundary

International Nuclear Information System (INIS)

Ibrahim, Abdel-Baset M A; Osman, Junaidah

2013-01-01

The dynamics of the nonlinear (NL) dielectric susceptibility of ferroelectrics (FE) near the morphotropic phase boundary (MPB) is theoretically investigated based on the Landau–Devonshire free energy approach and the concept of FE soft modes. To do so, the NL dielectric susceptibility elements of FE material in the tetragonal phase are expressed as functions of optical phonon modes. These are the E modes with normal characteristic frequency ω E 2 and the A modes with ω A 2 . On the one hand, the tetragonal E modes appear to exhibit a double soft-mode character, i.e. the mode softens either when the thermodynamic temperature T approaches the transition temperature T c or when the free energy parameter β 1 approaches β 2 . On the other hand, the A modes exhibit single soft-mode character when T approaches T c . Within this formulation, the dynamics of first-, second- and third-order NL susceptibility elements are investigated. The origin of the anomalous behavior of certain NL elements at the MPB appears to be a manifestation of FE mode-softening. This approach provides a simple yet powerful technique to understand the dynamics of the NL dielectric susceptibility elements of FE material near the MPB. (paper)

Spontaneous polarization of a nonstoichiometric ferroelectric NaNO2 at low temperatures

Science.gov (United States)

Matyjasik, S.; Shaldin, Yu.

2017-10-01

We report measurements of the temperature dependence of the pyroelectric charge in a nonstoichiometric z-cut sample of sodium nitrite in the temperature range 4.2-300 K. The obtained data are supplemented by the measurements of thermally stimulated depolarization (TSD) in electric fields of different magnitudes and polarities. All the experimental results serve as the basis for constructing the temperature dependence of the spontaneous polarization ΔPs(T,U) and the pyroelectric coefficient γ(U,T) for fixed external stimuli. It is found that the value of ΔPs in the sample of sodium nitrite is negligible at low temperatures, up to 40 K. This indicates (for known experimental values of the linear expansion coefficients) a minor contribution of the sample piezoelectricity to the spontaneous polarization in this temperature range. Starting from T = 75 K, an exponential increase in the contribution to the total charge of the TSD is found only in the defect subsystem of the crystal. Based on the data of physical studies, a crystal-physics model is proposed, which differs from the model presented by Lines and Glass. Due to the splitting of ion positions in all three sublattices upon the transition to the paraelectric phase, NaNO2 crystals can be assigned to the three-dimensional type of ferroelectrics, according to the classification by Abrahams and Keve. This agrees with the estimate of the spontaneous polarization Ps ˜ 0.01 C/m2 given in the paper. This value is significantly different from the data obtained by repolarization of nonstoichiometric samples in strong electric fields up to the phase transition temperature.

Tunable Curie temperature around room temperature and magnetocaloric effect in ternary Ce–Fe–B amorphous ribbons

International Nuclear Information System (INIS)

Li, Zhu-bai; Zhang, Le-le; Zhang, Xue-feng; Li, Yong-feng; Zhao, Qian; Zhao, Tong-yun; Shen, Bao-gen

2017-01-01

Ce 13−x Fe 81+x B 6 ( x   =  0, 0.5, 1, 1.5, and 2) amorphous magnets were prepared by melt-spinning method. These magnets are magnetically soft at low temperature, and undergo a second-order phase transition from ferromagnetic to paramagnetic state near room temperature with a broad temperature span. The phase-transition temperature is tunable by the variation of the Ce/Fe atomic ratio, which is mainly due to the change of the coordination number of Fe atoms in these ternary Ce–Fe–B amorphous magnets. Though the entropy change is low, the refrigeration capacities are in the ranges of 116–150 J kg −1 and 319–420 J kg −1 , respectively, for the magnetic field changes of 0–2 T and 0–5 T, which is comparable with those of conventional magnetic materials for room-temperature refrigeration. Given the low cost of Fe and Ce, Ce–Fe–B amorphous magnets are attractive magnetic refrigerant candidates. (paper)

Preisach modeling of temperature-dependent ferroelectric response of piezoceramics at sub-switching regime

Science.gov (United States)

Ochoa, Diego Alejandro; García, Jose Eduardo

2016-04-01

The Preisach model is a classical method for describing nonlinear behavior in hysteretic systems. According to this model, a hysteretic system contains a collection of simple bistable units which are characterized by an internal field and a coercive field. This set of bistable units exhibits a statistical distribution that depends on these fields as parameters. Thus, nonlinear response depends on the specific distribution function associated with the material. This model is satisfactorily used in this work to describe the temperature-dependent ferroelectric response in PZT- and KNN-based piezoceramics. A distribution function expanded in Maclaurin series considering only the first terms in the internal field and the coercive field is proposed. Changes in coefficient relations of a single distribution function allow us to explain the complex temperature dependence of hard piezoceramic behavior. A similar analysis based on the same form of the distribution function shows that the KNL-NTS properties soften around its orthorhombic to tetragonal phase transition.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

Science.gov (United States)

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Impact induced depolarization of ferroelectric materials

Science.gov (United States)

Agrawal, Vinamra; Bhattacharya, Kaushik

2018-06-01

We study the large deformation dynamic behavior and the associated nonlinear electro-thermo-mechanical coupling exhibited by ferroelectric materials in adiabatic environments. This is motivated by a ferroelectric generator which involves pulsed power generation by loading the ferroelectric material with a shock, either by impact or a blast. Upon impact, a shock wave travels through the material inducing a ferroelectric to nonpolar phase transition giving rise to a large voltage difference in an open circuit situation or a large current in a closed circuit situation. In the first part of this paper, we provide a general continuum mechanical treatment of the situation assuming a sharp phase boundary that is possibly charged. We derive the governing laws, as well as the driving force acting on the phase boundary. In the second part, we use the derived equations and a particular constitutive relation that describes the ferroelectric to nonpolar phase transition to study a uniaxial plate impact problem. We develop a numerical method where the phase boundary is tracked but other discontinuities are captured using a finite volume method. We compare our results with experimental observations to find good agreement. Specifically, our model reproduces the observed exponential rise of charge as well as the resistance dependent Hugoniot. We conclude with a parameter study that provides detailed insight into various aspects of the problem.

Experimental and numerical study of the thermal performance of a new type of phase change material room

International Nuclear Information System (INIS)

Meng, Erlin; Yu, Hang; Zhan, Guangyi; He, Yang

2013-01-01

Highlights: • A new type of PCM room is proposed, two kinds of PCM were used in the room. • The new room can decrease the indoor air temperature fluctuation by 4.3 °C in summer. • Indoor air temperature fluctuation was decreased by 14.2 °C in winter for the new room. • Important factors that affect the thermal performance of the new room were studied. - Abstract: A new type of phase change material (PCM) room was proposed in this paper to control the indoor air temperature for a better thermal comfort for human beings. That is to place two different kinds of PCM into room envelopes of different orientations. Both experimental and numerical studies were carried out for rooms with/without PCM. Indoor air temperature and interior surface heat flux of the two rooms were studied in typical summer and winter climate of Shanghai (31.2N, 121.5E). Important factors that affect the thermal performance of the PCM were studied, such as phase change temperature, thickness of the PCM and the arrangement of the two kinds of PCM in the room. Results showed that this new type of PCM room can decrease the indoor air temperature fluctuation by 4.3 °C in summer and 14.2 °C in winter. Different arrangements of the two kinds of PCM in the room can cause an indoor air temperature difference to be 6.9 °C in summer and 2.7 °C in winter

Short- and long-range polar order contributions to the Ferroelectric phase of Ca.sup.2+./sup. doped SrTiO.sub.3./sub.

Czech Academy of Sciences Publication Activity Database

Markovin, P.A.; Trepakov, Vladimír; Guzhva, M.E.; Razdobarin, A.G.; Tagantsev, A. K.; Andreev, D. A.; Dejneka, Alexandr

2016-01-01

Roč. 3, č. 11 (2016), s. 1-12, č. článku 115705. ISSN 2053-1591 R&D Projects: GA ČR GA15-13778S Institutional support: RVO:68378271 Keywords : quantum paraelectrics * impurities and defects * low-temperature polar state * ferroelectric phase * long-range order * short-range Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.068, year: 2016

Room temperature ferromagnetism in Fe-doped CuO nanoparticles.

Science.gov (United States)

Layek, Samar; Verma, H C

2013-03-01

The pure and Fe-doped CuO nanoparticles of the series Cu(1-x)Fe(x)O (x = 0.00, 0.02, 0.04, 0.06 and 0.08) were successfully prepared by a simple low temperature sol-gel method using metal nitrates and citric acid. Rietveld refinement of the X-ray diffraction data showed that all the samples were single phase crystallized in monoclinic structure of space group C2/c with average crystallite size of about 25 nm and unit cell volume decreases with increasing iron doping concentration. TEM micrograph showed nearly spherical shaped agglomerated particles of 4% Fe-doped CuO with average diameter 26 nm. Pure CuO showed weak ferromagnetic behavior at room temperature with coercive field of 67 Oe. The ferromagnetic properties were greatly enhanced with Fe-doping in the CuO matrix. All the doped samples showed ferromagnetism at room temperature with a noticeable coercive field. Saturation magnetization increases with increasing Fe-doping, becomes highest for 4% doping then decreases for further doping which confirms that the ferromagnetism in these nanoparticles are intrinsic and are not resulting from any impurity phases. The ZFC and FC branches of the temperature dependent magnetization (measured in the range of 10-350 K by SQUID magnetometer) look like typical ferromagnetic nanoparticles and indicates that the ferromagnetic Curie temperature is above 350 K.

All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

2012-01-01

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

Nanoscale organic ferroelectric resistive switches

NARCIS (Netherlands)

Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

2014-01-01

Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

Science.gov (United States)

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Thermodynamic properties of a quasi-harmonic model for ferroelectric transitions

International Nuclear Information System (INIS)

Mkam Tchouobiap, S E; Mashiyama, H

2011-01-01

Within a framework of a quasi-harmonic model for quantum particles in a local potential of the double Morse type and within the mean-field approximation for interactions between particles, we investigate the thermodynamic properties of ferroelectric materials. A quantum thermodynamic treatment gives analytic expressions for the internal energy, the entropy, the specific heat, and the static susceptibility. The calculated thermodynamic characteristics are studied as a function of temperature and energy barrier, where it is shown that at the proper choice of the theory parameters, particularly the energy barrier, the model system exhibits characteristic features of either second-order tricritical or first-order phase transitions. Our results indicate that the barrier energy seems to be an important criterion for the character of the structural phase transition. The influence of quantum fluctuations manifested on zero-point energy on the phase transition and thermodynamic properties is analyzed and discussed. This leads to several quantum effects, including the existence of a saturation regime at low temperatures, where the order parameter saturates giving thermodynamic saturation of the calculated thermodynamic quantities. It is found that both quantum effects and energy barrier magnitude have an important influence on the thermodynamic properties of the ferroelectric materials and on driving the phase transition at low temperatures. Also, the analytical parameters' effect on the transition temperature is discussed, which seems to give a general insight into the structural phase transition and its nature.

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

Science.gov (United States)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

International Nuclear Information System (INIS)

Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

2014-01-01

Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer

NARCIS (Netherlands)

Hayton, D. J.; Khudchencko, A.; Pavelyev, D. G.; Hovenier, J. N.; Baryshev, A.; Gao, J. R.; Kao, T. Y.; Hu, Q.; Reno, J. L.; Vaks, V.

2013-01-01

We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60 dB is observed in the intermediate frequency

Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer

NARCIS (Netherlands)

Hayton, D.J.; Khudchenko, A.; Pavelyev, D.G.; Hovenier, J.N.; Baryshev, A.; Gao, J.R.; Kao, T.Y.; Hu, Q.; Reno, J.L.; Vaks, V.

2013-01-01

We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60?dB is observed in the intermediate frequency

Ferroelectric switching of elastin

Science.gov (United States)

Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

2014-01-01

Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

International Nuclear Information System (INIS)

Oubelkacem, A.; Essaoudi, I.; Ainane, A.; Saber, M.; Dujardin, F.

2011-01-01

The transition properties of a ferroelectric thin film with seeding layers were studied using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions. The effect of interaction parameters for the seeding layer on the phase diagram was also examined. We calculated the critical temperature and the polarization of the ferroelectric thin film for different seeding layer structures. We found that the seeding layer can greatly increase the Curie temperature and the polarization.

Submicrosecond electro-optic switching in the liquid-crystal smectic A phase: The soft-mode ferroelectric effect

Science.gov (United States)

Andersson, G.; Dahl, I.; Keller, P.; Kuczyński, W.; Lagerwall, S. T.; Skarp, K.; Stebler, B.

1987-08-01

A new liquid-crystal electro-optic modulating device similar to the surface-stabilized ferroelectric liquid-crystal device is described. It uses the same kind of ferroelectric chiral smectics and the same geometry as that device (thin sample in the ``bookshelf '' layer arrangement) but instead of using a tilted smectic phase like the C* phase, it utilizes the above-lying, nonferroelectric A phase, taking advantage of the electroclinic effect. The achievable optical intensity modulation that can be detected through the full range of the A phase is considerably lower than for the surface-stabilized device, but the response is much faster. Furthermore, the response is strictly linear with respect to the applied electric field. The device concept is thus appropriate for modulator rather than for display applications. We describe the underlying physics and present measurements of induced tilt angle, of light modulation depth, and of rise time.

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain.

Science.gov (United States)

Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A

2018-03-27

Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3

KAUST Repository

Cui, Chaojie; Hu, Weijin; Yan, Xingxu; Addiego, Christopher; Gao, Wenpei; Wang, Yao; Wang, Zhe; Li, Linze; Cheng, Yingchun; Li, Peng; Zhang, Xixiang; Alshareef, Husam N.; Wu, Tao; Zhu, Wenguang; Pan, Xiaoqing; Li, Lain-Jong

2018-01-01

Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intra-layer ferroelectricity in two-dimensional (2D) van der Waals layered -In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. Based on the in-plane switchable diode effect and the narrow bandgap (~1.3 eV) of ferroelectric In2Se3, a prototypical non-volatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3

KAUST Repository

Cui, Chaojie

2018-01-30

Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intra-layer ferroelectricity in two-dimensional (2D) van der Waals layered -In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. Based on the in-plane switchable diode effect and the narrow bandgap (~1.3 eV) of ferroelectric In2Se3, a prototypical non-volatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

Composition dependent room temperature structure, electric and magnetic properties in magnetoelectric Pb(Fe{sub 1/2}Nb{sub 1/2})O{sub 3}−Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3} solid-solutions

Energy Technology Data Exchange (ETDEWEB)

Matteppanavar, Shidaling [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore, 560056 (India); Rayaprol, Sudhindra [UGC-DAE-Consortium for Scientific Research, Mumbai Centre, B A R C Campus, Mumbai, 400085 (India); Angadi, Basavaraj, E-mail: brangadi@gmail.com [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore, 560056 (India); Sahoo, Balaram [Materials Research Centre, Indian Institute of Science, Bangalore, 560012 (India)

2016-08-25

We report on the studies of room temperature (RT) crystal structure, electric and magnetic properties of (1−x) Pb(Fe{sub 1/2}Nb{sub 1/2})O{sub 3} – x Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3} (PFN{sub 1−x} – PFW{sub x}) (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) solid solutions through the measurements of X-ray diffraction, FTIR, scanning electron microscopy (SEM), Neutron diffraction, Raman, Magnetic, Mössbauer and ferroelectric measurements. FTIR spectra showed two main perovskite related transmission bands. The SEM analysis shows an average grain size of 2 μm for all the solid solutions. Rietveld refinement was performed on RT X-ray diffraction (XRD) and neutron diffraction (ND), which reveals, the monoclinic phase for x = 0.0 with space group Cm and Cubic phase for x = 1.0 with space group Pm-3m. In other words, increasing x, the samples exhibit a gradual phase transition from monoclinic to cubic. In addition, the Raman spectroscopy corroborates the change in structural symmetry from monoclinic (Cm) to cubic (Pm-3m) on varying x. The coexistence of both monoclinic and cubic symmetries was observed between x = 0.2–0.8. Magnetic measurements shows that, the magnetic phase transition from paramagnetic to antiferromagnetic (AFM) was observed at or above RT for x = 0.6 and above. The magnetic structure was refined using the propagation vector k = (½, ½, ½) and structure was found to be G-type antiferromagnetic. Magnetic properties (M-H loops) shows, a weak ferromagnetic behaviour with antiferromagnetic ordering at RT. At RT, x = 0.0–0.6 the samples exhibits disordered paramagnetic property but weakly coupled with antiferromagnetic domains. But, x = 0.8 and 1.0 samples show antiferromagnetic and they are weakly coupled with paramagnetic domains. The temperature dependent magnetization (M(T)) confirms, the augmentation of Néel temperature (T{sub N}) from 155 K to 350 K on increasing x. Mössbauer spectroscopy confirms superparamagnetic nature with the presence of

Ferroelectric and optical properties of `Ba-doped' new double perovskites

Science.gov (United States)

Parida, B. N.; Panda, Niranjan; Padhee, R.; Parida, R. K.

2018-06-01

Solid solution of Pb1.5Ba0.5BiNbO6 ceramic is explored here to obtain its ferroelectric and optical properties. The polycrystalline sample was prepared by a standard solid state reaction route. Room temperature XRD and FTIR spectra of the compound exhibit an appreciable change in its crystal structure of Pb2BiNbO6 on addition of 'Ba' in A site. The surface morphology of the gold-plated sintered pellet sample recorded by SEM exhibits a uniform distribution of small grains with well-defined grain boundaries. Detailed studies on the nature of polarization and variation of dielectric constant, tangent loss with temperature as well as frequency indicate the existence of Ferro-electricity in the sample. Using UV-Vis spectroscopy, the optical band gap of the studied sample has been estimated as 2.1 eV, which is useful for photo catalytic devices. Photoluminescence analysis of the powder sample shows a strong red photoluminescence with blue excitation, which is basically useful for LED.

Ferroelectric, magnetic and structural studies of the Bi{sub 4}LaSmFe{sub 2}Ti{sub 3}O{sub 18} multiferroic material

Energy Technology Data Exchange (ETDEWEB)

Alarcón-Suesca, C.E. [Fachgebiet Synthese und Charakterisierung Innovatiert Materialien, Chemistry Department, Technische Universität München, Lichtenbergstrasse D-85748, Garching (Germany); Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, AA 5997 Bogotá DC (Colombia); Cardona-Vásquez, J.A. [Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, AA 5997 Bogotá DC (Colombia); Salcedo-Fontecha, J.P.; Vargas-Jiménez, A. [Maestría en Ciencias Física, Departamento de Física, Universidad Nacional de Colombia, AA 5997 Bogotá DC (Colombia); Landínez-Téllez, D.A.; Roa-Rojas, J. [Grupo de Física de Nuevos Materiales, Departamento de Física, Universidad Nacional de Colombia, AA 5997 Bogotá DC (Colombia)

2014-12-15

We report the synthesis and characterization of the new Bi{sub 4}LaSmFe{sub 2}Ti{sub 3}O{sub 18} ferroelectric ceramic. X-ray characterization reveals reflections for layered perovskite Aurivillius system. Rietveld analyses of the powder pattern shows that Bi{sub 4}LaSmFe{sub 2}Ti{sub 3}O{sub 18} crystallizes in orthorhombic structure, which corresponds to the space group F2/mm (#42), with lattice parameters a=5.4240(16) Ǻ, b=5.4078(23) Ǻ and c=50.2440(12) Ǻ. Scanning electron microscopy (SEM) reveals the formation of dense material with plate-like morphology. Electric polarization curves were measured by means of a radiant ferroelectric tester, at room temperature in bulk samples and exhibit an intrinsic ferroelectric response, even at low applied fields. Measurements of the magnetization as a function of temperature after Zero field cooling and field cooling were carried out by using a MPMS Quantum Design SQUID magnetometer. We found an effective magnetic moment of 7.95 µB, which is 95.8% in agreement with the expected value calculated from Hund's rules. Magnetization curves as the function of applied fields reveal an incipient hysteretic behavior at room temperature.

Room temperature single-crystal diffuse scattering and ab initio lattice dynamics in CaTiSiO5.

Science.gov (United States)

Gutmann, M J; Refson, K; Zimmermann, M V; Swainson, I P; Dabkowski, A; Dabkowska, H

2013-08-07

Single-crystal diffuse scattering data have been collected at room temperature on synthetic titanite using both neutrons and high-energy x-rays. A simple ball-and-springs model reproduces the observed diffuse scattering well, confirming its origin to be primarily due to thermal motion of the atoms. Ab initio phonons are calculated using density-functional perturbation theory and are shown to reproduce the experimental diffuse scattering. The observed diffuse x-ray and neutron scattering patterns are consistent with a summation of mode frequencies and displacement eigenvectors associated with the entire phonon spectrum, rather than with a simple, short-range static displacement. A band gap is observed between 600 and 700 cm(-1) with only two modes crossing this region, both associated with antiferroelectric Ti-O motion along a. One of these modes (of Bu symmetry), displays a large LO-TO mode-splitting (562-701.4 cm(-1)) and has a dominant component coming from Ti-O bond-stretching and, thus, the mode-splitting is related to the polarizability of the Ti-O bonds along the chain direction. Similar mode-splitting is observed in piezo- and ferroelectric materials. The calculated phonon dispersion model may be of use to others in future to understand the phase transition at higher temperatures, as well as in the interpretation of measured phonon dispersion curves.

Experimental evidence of enhanced ferroelectricity in Ca doped BiFeO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Costa, L.V.; Deus, R.C. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R.; Longo, E. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Bauru, Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360 Bauru, SP (Brazil); Cilense, M. [Universidade Estadual Paulista, UNESP, Instituto de Química – Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, 14800-90 Araraquara, SP (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

2014-04-01

Calcium (Ca)-doped bismuth ferrite (BiFeO{sub 3}) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements. Structural studies by XRD and TEM reveal the co-existence of distorted rhombohedral and tetragonal phases in the highest doped BiFeO{sub 3} where enhanced ferroelectric and piezoelectric properties are produced by internal strain. Resistive switching is observed in BFO and Ca-doped BFO which are affected by the barrier contact and work function of multiferroic materials and Pt electrodes. A high coercive field in the hysteresis loop is observed for the BiFeO{sub 3} film. Piezoelectric properties are improved in the highest Ca-doped sample due to changes in the crystal structure of BFO for a primitive cubic perovskite lattice with four-fold symmetry and a large tetragonal distortion within the crystal domain. This observation introduces magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom which are already present in the multiferroic BiFeO{sub 3}. - Highlights: • Ca doped BiFeO{sub 3} thin films were obtained by the polymeric precursor method. • Co-existence of distorted rhombohedral and tetragonal phases are evident. • Enhanced ferroelectric and piezoelectric properties are produced by the internal strain in the Ca doped BiFeO{sub 3} film.

Composition-driven magnetic and structural phase transitions in Bi1-xPrxFe1-xMnxO3 multiferroics

Science.gov (United States)

Khomchenko, V. A.; Ivanov, M. S.; Karpinsky, D. V.; Paixão, J. A.

2017-09-01

Magnetic ferroelectrics continue to attract much attention as promising multifunctional materials. Among them, BiFeO3 is distinguished by exceptionally high transition temperatures and, thus, is considered as a prototype room-temperature multiferroic. Since its properties are known to be strongly affected by chemical substitution, recognition of the doping-related factors determining the multiferroic behavior of the material would pave the way towards designing the structures with enhanced magnetoelectric functionality. In this paper, we report on the crystal structure and magnetic and local ferroelectric properties of the Bi1-xPrxFe1-xMnxO3 (x ≤ 0.3) compounds prepared by a solid state reaction method. The polar R3c structure specific to the parent BiFeO3 has been found to be unstable with respect to doping for x ≳ 0.1. Depending on the Pr/Mn concentration, either the antipolar PbZrO3-like or nonpolar PrMnO3-type structure can be observed. It has been shown that the non-ferroelectric compounds are weak ferromagnetic with the remanent/spontaneous magnetization linearly decreasing with an increase in x. The samples containing the polar R3c phase exhibit a mixed antiferromagnetic/weak ferromagnetic behavior. The origin of the magnetic phase separation taking place in the ferroelectric phase is discussed as related to the local, doping-introduced structural heterogeneity contributing to the suppression of the cycloidal antiferromagnetic ordering characteristic of the pure BiFeO3.

High Temperature Electrostrictive Ceramics, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — TRS Technologies proposes to develop high temperature electrostrictors from bismuth-based ferroelectrics. These materials will exhibit high strain and low loss in...

Quantum mechanical studies of complex ferroelectric perovskites

Science.gov (United States)

Ramer, Nicholas John

In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

Materials for Room Temperature Magnetic Refrigeration

DEFF Research Database (Denmark)

Hansen, Britt Rosendahl

Magnetic refrigeration is a cooling method, which holds the promise of being cleaner and more efficient than conventional vapor-compression cooling. Much research has been done during the last two decades on various magnetic materials for this purpose and today a number of materials are considered...... candidates as they fulfill many of the requirements for a magnetic refrigerant. However, no one material stands out and the field is still active with improving the known materials and in the search for a better one. Magnetic cooling is based on the magnetocaloric effect, which causes a magnetic material...... to change its temperature when a magnetic field is applied or removed. For room temperature cooling, one utilizes that the magnetocaloric effect peaks near magnetic phase transitions and so the materials of interest all have a critical temperature within the range of 250 – 310 K. A magnetic refrigerant...

Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2015-09-30

Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

One-Dimensional Vanadium Dioxide Nanostructures for Room Temperature Hydrogen Sensors

Directory of Open Access Journals (Sweden)

Aline Simo

2015-06-01

Full Text Available In relation to hydrogen (H2 economy in general and gas sensing in particular, an extensive set of one dimensional (1-D nano-scaled oxide materials are being investigated as ideal candidates for potential gas sensing applications. This is correlated to their set of singular surface characteristics, shape anisotropy and readiness for integrated devices. Nanostructures of well- established gas sensing materials such as Tin Oxide (SnO2, Zinc Oxide (ZnO, Indium (III Oxide (In2O3, and Tungsten Trioxide (WO3 have shown higher sensitivity and gas selectivity, quicker response, faster time recovery, as well as an enhanced capability to detect gases at low concentrations. While the overall sensing characteristics of these so called 1-D nanomaterials are superior, they are efficient at high temperature; generally above 200 0C. This operational impediment results in device complexities in integration that limit their technological applications, specifically in their miniaturized arrangements. Unfortunately, for room temperature applications, there is a necessity to dope the above mentioned nano-scaled oxides with noble metals such as Platinum (Pt, Palladium (Pd, Gold (Au, Ruthenium (Ru. This comes at a cost. This communication reports, for the first time, on the room temperature enhanced H2 sensing properties of a specific phase of pure Vanadium Dioxide (VO2 phase A in their nanobelt form. The relatively observed large H2 room temperature sensing in this Mott type specific oxide seems to reach values as low as 14 ppm H2 which makes it an ideal gas sensing in H2 fuelled systems.

High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays

Science.gov (United States)

Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.

2002-12-01

This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

KAUST Repository

Pattanasattayavong, Pichaya

2012-12-27

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room temperature creep in metals and alloys

Energy Technology Data Exchange (ETDEWEB)

Deibler, Lisa Anne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials Characterization and Performance

2014-09-01

Time dependent deformation in the form of creep and stress relaxation is not often considered a factor when designing structural alloy parts for use at room temperature. However, creep and stress relaxation do occur at room temperature (0.09-0.21 T_m for alloys in this report) in structural alloys. This report will summarize the available literature on room temperature creep, present creep data collected on various structural alloys, and finally compare the acquired data to equations used in the literature to model creep behavior. Based on evidence from the literature and fitting of various equations, the mechanism which causes room temperature creep is found to include dislocation generation as well as exhaustion.

Structure of the fully ferroelectric/fully ferroelastic orthohombic room-temperature phase of cobalt bromine boracite, Co3B7O13Br and nickel chlorine boracite, Ni3B7O13Cl

International Nuclear Information System (INIS)

Kubel, F.; Mao, S.Y.; Schmid, H.

1992-01-01

The X-ray crystal structures of optically controlled single-domain crystals of fully ferroelectric/fully ferroelastic cobalt bromine boracite, Co 3 B 7 O 13 Br (Co-Br) at 298 K [M r = 540.38, orthorhombic, Pca2 1 , a = 8.5614 (2), b = 8.5657 (2), c = 12.1196 (3) A, V = 888.78 (4) A 3 , Z = 4, D x = 4.04 Mg m -3 , λ(Mo Kα) = 0.7107 A, μ = 10.61 mm -1 , F(000) = 1020, R = 7.0, wR = 5.4%, 2824 reflections] and of nickel chlorine boracite, Ni 3 B 7 O 13 Cl (Ni-Cl) at 298 K [M r = 495.25, orthorhombic, Pca2 1 , a = 8.5105 (4), b = 8.4984 (4), c = 12.0324 (5) A, V = 870.25 (7) A 3 , Z = 4, D x = 3.78 Mg m -3 , λ(Mo Kα) = 0.7107 A, μ = 6.8 mm -1 , F(000) = 960, R = 3.5, wR = 3.1%, 2082 reflections] are reported. The metal surroundings of Co-Br and Ni-Cl were analyzed in detail and show two metal sites (Co2, Co3; Ni2, Ni3) with chemically similar environments and one metal site (Co1; Ni1) with a different environment. Six B atoms have a tetrahedral or slightly distorted tetrahedral coordination, whereas one B atom (B4) has triangular surroundings in both compounds. (orig.)

FAST TRACK COMMUNICATION: Reproducible room temperature giant magnetocaloric effect in Fe-Rh

Science.gov (United States)

Manekar, Meghmalhar; Roy, S. B.

2008-10-01

We present the results of magnetocaloric effect (MCE) studies in polycrystalline Fe-Rh alloy over a temperature range of 250-345 K across the first order antiferromagnetic to ferromagnetic transition. By measuring the MCE under various thermomagnetic histories, contrary to the long held belief, we show here explicitly that the giant MCE in Fe-Rh near room temperature does not vanish after the first field cycle. In spite of the fact that the virgin magnetization curve is lost after the first field cycle near room temperature, reproducibility in the MCE under multiple field cycles can be achieved by properly choosing a combination of isothermal and adiabatic field variation cycles in the field-temperature phase space. This reproducible MCE leads to a large effective refrigerant capacity of 324.42 J kg-1, which is larger than that of the well-known magnetocaloric material Gd5Si2Ge2. This information could be important as Fe-Rh has the advantage of having a working temperature of around 300 K, which can be used for room temperature magnetic refrigeration.

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

Science.gov (United States)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3.

Science.gov (United States)

Cui, Chaojie; Hu, Wei-Jin; Yan, Xingxu; Addiego, Christopher; Gao, Wenpei; Wang, Yao; Wang, Zhe; Li, Linze; Cheng, Yingchun; Li, Peng; Zhang, Xixiang; Alshareef, Husam N; Wu, Tom; Zhu, Wenguang; Pan, Xiaoqing; Li, Lain-Jong

2018-02-14

Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In 2 Se 3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In 2 Se 3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In 2 Se 3 , a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

Room-temperature antiferromagnetic memory resistor.

Science.gov (United States)

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

Science.gov (United States)

Sharma, Ashok K.; Teverovsky, Alexander

2001-01-01

Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

Effects of criticality and disorder on piezoelectric properties of ferroelectrics

International Nuclear Information System (INIS)

Porta, Marcel; Lookman, Turab; Saxena, Avadh

2010-01-01

The piezoelectric response of BaTiO 3 is studied in the vicinity of the cubic to tetragonal phase transition, as a function of temperature and the applied electric field in the polar direction. We also investigate the influence of disorder. In the clean limit we obtain the divergence of the piezoelectric tensor at the critical point. The effect of a small amount of disorder is to translate the critical point in the temperature-electric field phase diagram. For large values of the disorder, the paraelectric to ferroelectric phase transition becomes diffuse but a maximum of the piezoelectric tensor is still obtained even though the divergence of the piezoelectric response is lost. These results are in agreement with experimental observations for the relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . We use a Ginzburg-Landau model which explicitly includes the coupling of the polarization to the strain, the electrostatic interaction between polarizations, and a quenched random compressional stress field generated by point defects. The strain field and its associated elastic energy are written in terms of the stress field and the electric polarization by energy minimization subject to elastic compatibility.

Monte Carlo simulations for describing the ferroelectric-relaxor crossover in BaTiO3-based solid solutions

International Nuclear Information System (INIS)

Padurariu, Leontin; Enachescu, Cristian; Mitoseriu, Liliana

2011-01-01

The properties induced by the M 4+ addition (M = Zr, Sn, Hf) in BaM x Ti 1-x O 3 solid solutions have been described on the basis of a 2D Ising-like network and Monte Carlo calculations, in which BaMO 3 randomly distributed unit cells were considered as being non-ferroelectric. The polarization versus temperature dependences when increasing the M 4+ concentration (x) showed a continuous reduction of the remanent polarization and of the critical temperature corresponding to the ferroelectric-paraelectric transition and a modification from a first-order to a second-order phase transition with a broad temperature range for which the transition takes place, as commonly reported for relaxors. The model also describes the system's tendency to reduce the polar clusters' average size while increasing their stability in time at higher temperatures above the Curie range, when a ferroelectric-relaxor crossover is induced by increasing the substitution (x). The equilibrium micropolar states during the polarization reversal process while describing the P(E) loops were comparatively monitored for the ferroelectric (x = 0) and relaxor (x = 0.3) states. Polarization reversal in relaxor compositions proceeds by the growth of several nucleated domains (the 'labyrinthine domain pattern') instead of the large scale domain formation typical for the ferroelectric state. The spatial and temporal evolution of the polar clusters in BaM x Ti 1-x O 3 solid solutions at various x has also been described by the correlation length and correlation time. As expected for the ferroelectric-relaxor crossover characterized by a progressive increasing degree of disorder, local fluctuations cause a reducing correlation time when the substitution degree increases, at a given temperature. The correlation time around the Curie temperature increases, reflecting the increasing stability in time of some polar nanoregions in relaxors in comparison with ferroelectrics, which was experimentally proved in

Low temperature and high pressure crystals of room temperature ionic liquid: N, N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium tetrafluoroborate

International Nuclear Information System (INIS)

Abe, Hiroshi; Imai, Yusuke; Takekiyo, Takahiro; Yoshimura, Yukihiro; Hamaya, Nozomu

2014-01-01

Crystals of room temperature ionic liquid (RTIL) are obtained separately at low temperature or under high pressure. The RTIL is N, N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium tetrafluoroborate, [DEME][BF 4 ]. At ambient pressure, low-temperature (LT) crystals appeared on slow cooling. By simultaneous X-ray diffraction and differential scanning calorimetry (DSC) measurements, metastable monoclinic and stable orthorhombic phases coexist in pure [DEME][BF 4 ]. Furthermore, the DSC thermal trace indicates that the metastable monoclinic phase was stabilized by adding water. In contrast, on compression process up to 7.6 GPa, crystallization is completely suppressed even upon slow compression. Direct observations using optical microscopy also support no crystal domain growth on compression process. High-pressure (HP) crystals at room temperature were seen only on decompression process, where two different kinds of crystals appeared subsequently. By crystal structure analysis, the LT crystal structures have no relation with the HP ones. Moreover, both metastable monoclinic phase at low temperature and higher pressure crystal has a folding molecular conformation and anti-parallel pairing of the [DEME] cation as the instability factors

Structural, dielectric and ferroelectric studies of (x) Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} + (1-x) BaTiO{sub 3} magnetoelectric nano-composites

Energy Technology Data Exchange (ETDEWEB)

Khader, S. Abdul, E-mail: khadersku@gmail.com; Sankarappa, T., E-mail: sankarappa@rediffmail.com [Department of Physics, Gulbarga University, Gulbarga-585106, Karnataka (India); Muneeswaran, M.; Giridharan, N. V. [Department of Physics, National Institute of Technology, Tiruchirapalli-620015 (India)

2016-05-06

The Particulate nano-composites of ferrite and ferroelectric phases having the general formula (x) Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} + (1-x) BaTiO{sub 3} (x=15%, 30% and 45%) were synthesized by sintering mixtures of highly ferroelectric BaTiO{sub 3} (BT) and highly magneto-strictive magnetic component Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4}(MCZF). The presence of constituent phases of ferrite, ferroelectric and their composites were probed and confirmed by X-ray diffraction (XRD) studies. Surface morphology of the samples has been investigated using Field Emission Scanning Electron Microscope (FESEM). The variation of dielectric constant and dissipation factor as a function of frequency from 100 Hz to 1 MHz at room temperature were carried out using a Hioki LCR Hi-Tester. The dielectric constant and dielectric loss were found to decrease rapidly in the low frequency region and became almost constant in the high frequency region. The electrical conductivity deduced from the measured dielectric data has been thoroughly analyzed and found that the conduction mechanism in these composites is in conformity with small polaron hopping model. The ferroelectric properties of synthesized magneto-electric nano-composites were measured using P-E loop tracer.

Ultrahigh piezoelectricity in ferroelectric ceramics by design

Science.gov (United States)

Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R.; Zhang, Shujun

2018-03-01

Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d33 of up to 1,500 pC N-1 and dielectric permittivity ɛ33/ɛ0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

Mechanical Behaviour of 304 Austenitic Stainless Steel Processed by Room Temperature Rolling

Science.gov (United States)

Singh, Rahul; Goel, Sunkulp; Verma, Raviraj; Jayaganthan, R.; Kumar, Abhishek

2018-03-01

To study the effect of room temperature rolling on mechanical properties of 304 Austenitic Stainless Steel, the as received 304 ASS was rolled at room temperature for different percentage of plastic deformation (i.e. 30, 50, 70 and 90 %). Microstructural study, tensile and hardness tests were performed in accordance with ASTM standards to study the effect of rolling. The ultimate tensile strength (UTS) and hardness of a rolled specimen have enhanced with rolling. The UTS has increased from 693 MPa (as received) to 1700 MPa (after 90% deformation). The improvement in UTS of processed samples is due to combined effect of grain refinement and stress induced martensitic phase transformation. The hardness values also increases from 206 VHN (as received) to 499 VHN (after 90% deformation). Magnetic measurements were also conducted to confirm the formation of martensitic phase.

Room temperature ferromagnetism in nano-crystalline Co:ThO2 powders

International Nuclear Information System (INIS)

Bhide, M.K.; Kadam, R.M.; Godbole, S.V.; Tyagi, A.K.; Salunke, H.G.

2012-01-01

The major interest in dilute magnetic semiconductors (DMS's) had been directed towards the synthesis of room temperature ferromagnetic (RTF) materials for their potential applications in spintronic devices. Room temperature (RT) ferromagnetism was initially reported in Co doped TiO 2 , ZnO 2 and SnO 2 thin films and in the recent past in transition metal doped wide band gap materials. In the present paper we report the synthesis of Co doped ThO 2 nano powders by urea combustion method. The XRD characterization of 300℃ annealed samples confirmed formation of ThO 2 in the cubic phase and the average crystallite size obtained using Scherrer's formula was around 6 nm

Design of advanced multicomponent ferroelectric liquid crystalline mixtures with submicrometre helical pitch

Czech Academy of Sciences Publication Activity Database

Kurp, K.; Czerwiński, M.; Tykarska, M.; Bubnov, Alexej

2017-01-01

Roč. 44, č. 4 (2017), s. 748-756 ISSN 0267-8292 R&D Projects: GA MŠk 7AMB13PL041; GA MŠk(CZ) LD14007; GA ČR GA15-02843S Grant - others:COST Association EU(XE) COST Action IC1208 Institutional support: RVO:68378271 Keywords : ferroelectric liquid crystal * self-assembling materials * submicrometre helical pitch * room temperature mixture * switching time Subject RIV: JJ - Other Materials OBOR OECD: Nano-materials (production and properties) Impact factor: 2.661, year: 2016

X-ray diffraction and dielectric studies across morphotropic phase boundary in (1 - x) [Pb(Mg0.5W0.5)O3]-xPbTiO3 ceramics

International Nuclear Information System (INIS)

Singh, A.K.; Singh, Akhilesh Kumar

2011-01-01

Research highlights: → Structural studies reveal pseudocubic structure of PMW-xPT for the x ≤ 0.42, tetragonal for the x ≥ 0.72 and the coexistences of the two phases for intermediate compositions (0.46 ≤ x 0.68). → Temperature dependent dielectric constant for compositions in the two phase region shows two dielectric anomalies above room temperature and not just one as reported by earlier workers. → Rietveld structural analysis of PMW-xPT ceramics is presented for the first time to determine the fraction of the coexisting phases in MPB region. - Abstract: We present here the results of comprehensive X-ray diffraction and dielectric studies on several compositions of (1 - x)[Pb(Mg 0.5 W 0.5 )O 3 ]-xPbTiO 3 (PMW-xPT) solid solution across the morphotropic phase boundary. Rietveld analysis of the powder X-ray diffraction data reveals cubic (space group Fm3m) structure of PMW-xPT ceramics for the compositions with x ≤ 0.42, tetragonal (space group P4mm) structure for the compositions with x ≥ 0.72 and coexistence of the tetragonal and cubic phases for the intermediate compositions (0.46 ≤ x ≤ 0.68). Temperature dependence of the dielectric permittivity above room temperature exhibits diffuse nature of phase transitions for the compositions in the cubic and two phase region while the compositions with tetragonal structure at room temperature exhibit sharp ferroelectric to paraelectric phase transition. The PMW-xPT compositions with coexistence of tetragonal and cubic phases at room temperature exhibit two anomalies in the temperature dependence of the dielectric permittivity above room temperature. Using results of structural and dielectric studies a partial phase diagram of PMW-xPT ceramics is also presented.

Calculation of Vertical Temperature Gradients in Heated Rooms

DEFF Research Database (Denmark)

Overby, H.; Steen-Thøde, Mogens

This paper deals with a simple model which predicts the vertical temperature gradient in a heated room. The gradient is calculated from a dimensionless temperature profile which is determined by two room air temperatures only, the mean temperature in the occupied zone and the mean temperature...

Doping effect on ferromagnetism, ferroelectricity and dielectric constant in sol-gel derived Bi1-xNdxFe1-yCoyO3 nanoceramics

Science.gov (United States)

Das, Sananda; Sahoo, R. C.; Bera, K. P.; Nath, T. K.

2018-04-01

Doping at the post-transition metal site by trivalent rare-earth ions and 3d transition metal site by transition metal ions in perovskite lattice has observed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report large ferromagnetism and enhanced dielectric constant (at ∼100 Hz) in chemically synthesized single phase multiferroic Bi1-xNdxFe1-yCoyO3 (x = 0, 0.10; y = 0, 0.10) nanoparticles (average particles size ∼45 nm). We have also examined the ferroelectric nature of our chemically synthesized samples. The Rietveld refinement of the XRD data reveals the structural symmetry breaking from distorted rhombohedral R3c structure of BiFeO3 to the triclinic P1 structure in Bi0.9Nd0.1Fe0.9Co0.1O3 (BNFCO) without having any iron rich impurity phase. The magnetization in these nanoceramics most likely originates from the coexistence of mixed valence states of Fe ion (Fe2+ and Fe3+). A high room temperature dielectric constant (∼1050) has been observed at 100 Hz of BNFCO sample. The frequency dependent anomalies near Neel temperature of antiferromagnet in temperature variation of dielectric study have been observed for all the doped and co-doped samples exhibiting typical characteristic of relaxor ferroelectrics. A spectacular enhancement of remanent magnetization MR (∼7.2 emu/gm) and noticeably large coercivity HC (∼17.4 kOe) at 5 K have been observed in this BNFCO sample. Such emergence of ferromagnetic ordering indicates the canting of the surface spins at the surface boundaries because of the reduction of particle size in nanodimension. We have also observed P-E hysteresis loops with a remanent polarization of 26 μC/cm2 and coercive field of 5.6 kV/cm of this sample at room temperature. From impedance spectroscopy study the estimated activation energy of 0.41 eV suggests the semiconducting nature of our nanoceramic BNCFO sample.

Incipient ferroelectric to a possible ferroelectric transition in Te4+ doped calcium copper titanate (CaCu3Ti4O12 ceramics at low temperature as evidenced by Raman and dielectric spectroscopy

Directory of Open Access Journals (Sweden)

Nabadyuti Barman

2017-03-01

Full Text Available Partial replacement of Ti4+ by Te4+ ions in calcium copper titanate lattice improved its dielectric behaviour mostly due to cubic-to-tetragonal structural transformation and associated distortion in TiO6 octahedra. The relative permittivity values (23–30 x 103 of Te4+ doped ceramics is more than thrice that of un-doped ceramics (8 x 103 at 1 kHz. A decreasing trend in relative permittivity with increasing temperature (50–300 K is observed for all the samples. Barrett’s formula, as a signature of incipient ferroelectricity, is invoked to rationalize the relative permittivity variation as a function of temperature. A systematic investigation supported by temperature dependent Raman studies reveal a possible ferroelectric transition in Te4+ doped ceramic samples below 120 K. The possible ferroelectric transition is attributed to the interactions between quasi-local vibrations associated with the micro-clusters comprising TiO6 and TeO6 structural units and indirect dipole-dipole interactions of off-center B–cations (Ti4+ and Te4+ in double perovskite lattice.

Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Energy Technology Data Exchange (ETDEWEB)

Nan, Tianxiang; Emori, Satoru; Wang, Xinjun; Hu, Zhongqiang; Xie, Li; Gao, Yuan; Lin, Hwaider; Sun, Nian, E-mail: n.sun@neu.edu [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Peng, Bin; Liu, Ming, E-mail: mingliu@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, Xi' an Jiaotong University, Xi' an 710049 (China); Jiao, Jie; Luo, Haosu [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Budil, David [Department of Chemistry, Northeastern University, Boston, Massachusetts 02115 (United States); Jones, John G.; Howe, Brandon M.; Brown, Gail J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

2016-01-04

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

Catalytic behaviors of ruthenium dioxide films deposited on ferroelectrics substrates, by spin coating process

International Nuclear Information System (INIS)

Khachane, M.; Nowakowski, P.; Villain, S.; Gavarri, J.R.; Muller, Ch.; Elaatmani, M.; Outzourhite, A.; Luk'yanchuk, I.; Zegzouti, A.; Daoud, M.

2007-01-01

Catalytic ruthenium dioxide films were deposited by spin-coating process on ferroelectric films mainly constituted of SrBi 2 Ta 2 O 9 (SBT) and Ba 2 NaNb 5 O 15 (BNN) phases. After thermal treatment under air, these ferroelectric-catalytic systems were characterized by X-ray diffraction and scanning electron microscopy (SEM). SEM images showed that RuO 2 film morphology depended on substrate nature. A study of CH 4 conversion into CO 2 and H 2 O was carried out using these catalytic-ferroelectric multilayers: the conversion was analyzed from Fourier transform infrared (FTIR) spectroscopy, at various temperatures. Improved catalytic properties were observed for RuO 2 films deposited on BNN oxide layer

Magnetic and ferroelectric properties of Fe doped SrTiO{sub 3-{delta}} films

Energy Technology Data Exchange (ETDEWEB)

Kumar, A Sendil; Suresh, P; Srinath, S [School of Physics, University of Hyderabad, Hyderabad, 500 046 (India); Kumar, M Mahesh; Post, M L [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, ON, K1A 0R6 (Canada); Srikanth, H [Materials Physics Laboratory, Department of Physics, University of South Florida, Tampa, Florida, 33620 (United States); Sahner, Kathy; Moos, Ralf, E-mail: sssp@uohyd.ernet.i [Functional Materials, University of Bayreuth, 95447, Bayreuth (Germany)

2010-01-01

Recent interest in SrTiO{sub 3} stems from its wide applicability in microwave devices based on the tunable characteristics of dielectric constant in the microwave frequency range. It is obvious that for any such application, SrTiO{sub 3} should have a ferroelectric Curie temperature (T{sub C}) close to room temperature or higher. By inducing strains by chemical substitutions, it was possible to obtain T{sub C} as high as 200{sup 0}C in SrTiO{sub 3} modified with Fe{sup 4+}. Hysteresis loops obtained confirms the presence of ferroelectric domains. Two apparent transitions, one at {approx}200 {sup 0}C and another {approx}300 {sup 0}C were seen in {epsilon}', which are replicated as sharp drops in resistivity curves. These temperatures far exceed the T{sub C}s reported in the literature till now and could open new avenues for innumerable other applications for SrTiO{sub 3}. The magnetic properties of Fe doped SrTiO{sub 3} are also investigated. Low doping of Fe exhibits simple antiferromagnetic behaviour.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers.

Science.gov (United States)

Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua

2015-07-08

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

Exploiting fast detectors to enter a new dimension in room-temperature crystallography

International Nuclear Information System (INIS)

Owen, Robin L.; Paterson, Neil; Axford, Danny; Aishima, Jun; Schulze-Briese, Clemens; Ren, Jingshan; Fry, Elizabeth E.; Stuart, David I.; Evans, Gwyndaf

2014-01-01

A departure from a linear or an exponential decay in the diffracting power of macromolecular crystals is observed and accounted for through consideration of a multi-state sequential model. A departure from a linear or an exponential intensity decay in the diffracting power of protein crystals as a function of absorbed dose is reported. The observation of a lag phase raises the possibility of collecting significantly more data from crystals held at room temperature before an intolerable intensity decay is reached. A simple model accounting for the form of the intensity decay is reintroduced and is applied for the first time to high frame-rate room-temperature data collection

Portevin-Le Chatelier effect in a Ni–Cr–Mo alloy containing ordered phase with Pt{sub 2}Mo-type structure at room temperature

Energy Technology Data Exchange (ETDEWEB)

Yuan, Liang, E-mail: yuanliang031@163.com [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Hu, Rui, E-mail: rhu@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Jinshan [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Zhang, Xiaoqing; Yang, Yan’an [Xi’an Filter Metal Materials Co., Ltd., Xi’an 710072 (China)

2016-01-05

Serrated flow behavior or the Portevin-Le Chatelier (PLC) effect in a Ni–Cr–Mo alloy containing ordered phase was investigated at uniaxial tensile and nanoindentation tests at room temperature. Results demonstrate that the periodic arrangement of atoms for nano-sized ordered phase with Pt{sub 2}Mo-type structure obtained by ageing treatment at 600 °C, induces the appearance of an embedded serration (a small serration is embedded in two adjacent large serrations) in the alloy during uniaxial tensile tests at room temperature with strain rates of 10{sup −3} and 10{sup −4} s{sup −1}. The behavior characteristic of small serration is almost independent on strain rate, but that of large serration is significantly dependent on strain rate. Both the stress drop (Δσ) of the large serration and the interval (t{sub w}) between adjacent large serrations increase with decreasing strain rate from 10{sup −3} to 10{sup −4} s{sup −1}. Moreover, a single serration also appears in load-displacement curve of aged sample at loading rate of 10{sup −3} s{sup −1}. Both formation of order-disorder transformation-induced twins and twinning of ordered phase itself are responsible for the occurrence of the embedded serrations.

Ferroelectric properties of bismuth-doped PMT-PT ceramics

International Nuclear Information System (INIS)

Hyun, June Won; Kim, Yeon Jung; Kim, Gang Bae

2010-01-01

This study examined the ferroelectric properties of Bi-doped 0.66(Pb (1-3x/2) Bi x )(Mg 1/3 Ta 2/3 )O 3 - 0.34PbTiO 3 ceramics for use as a piezoelectric transformer. The optimum conditions for obtaining samples with high density and improved electrical properties were a sintering temperature of 1200 .deg. C/4 h and the addition of 3 mol% Bi. The temperature dependent dielectric constant of the ceramics was examined at frequencies ranging from 1 kHz to 100 kHz. The broad dielectric constant anomaly coupled with a shift in the dielectric maximum towards higher temperature with increasing frequency indicates a relaxor-type behavior in the ceramics. The piezoelectric coefficient (d 33 ) and the planar coupling factor (K p ) increase with the addition of 3 mol% Bi, and then decrease with further addition of Bi. The dielectric constant and the dissipation factor at room temperature could be improved by the addition of 3 mol% Bi.

Ferroelectric relaxor Ba(TiCe)O3

International Nuclear Information System (INIS)

Chen Ang; Zhi Jing; Yu Zhi

2002-01-01

The dielectric behaviour of Ba(Ti 1-y Ce y )O 3 solid solutions (y=0-0.3) has been studied. A small amount of Ce doping (y=0.02) has weak influence on the dielectric behaviour of Ba(Ti 1-y Ce y )O 3 . With increasing Ce concentration, three phase transitions of pure BaTiO 3 are pinched into one rounded dielectric peak with frequency dispersion, and the relaxation time follows the Vogel-Fulcher relation. The evolution from a normal ferroelectric to a ferroelectric relaxor is emphasized. High strains (S=∼0.1-0.19%) with a small hysteresis under ac fields are obtained in ferroelectric relaxors Ba(Ti 1-y Ce y )O 3 . The physical mechanism of the relaxation process, the pinching effect of the phase transitions and their influence on the ferroelectric and electrostrictive behaviour are discussed. (author)

Optical temperature sensing by upconversion luminescence of Er doped Bi5TiNbWO15ferroelectric materials

Directory of Open Access Journals (Sweden)

Hua Zou

2014-12-01

Full Text Available The Er3+ doped Bi5TiNbWO15 ceramics have been synthesized using conventional solid-state reaction techniques. The crystal structure, ferroelectric properties, UC emission properties and especially the temperature sensing behaviors were systematically studied. With increasing Er3+ content, the investigation of XRD pattern, the ferroelectric loop and the UC emission indicated that the Er3+ ions dopants preferentially substituted the A sites of Bi3TiNbO9 and then Bi2WO6. Based on fluorescence intensity ratio (FIR technique, the observed results implied the ceramics were promising candidates for temperature sensors in the temperature range of 175 K −550 K. More importantly, this study provided a contrast of temperature sensitivity between emission from the same part (Bi3TiNbO9 in bismuth layered-structure and emission from the different part (Bi3TiNbO9 and Bi2WO6 in bismuth layered-structure for the first time.

Room temperature ferromagnetism of nanocrystalline Nd1.90Ni0.10O3-δ

Science.gov (United States)

Sarkar, B. J.; Mandal, J.; Dalal, M.; Bandyopadhyay, A.; Chakrabarti, P. K.

2018-05-01

Nanocrystalline sample of Ni2+ doped neodymium oxide (Nd1.90Ni0.10O3-δ, NNO) is synthesized by co-precipitation method. Analysis of X-ray diffraction (XRD) pattern by Rietveld refinement method confirms the desired phase of NNO and complete substitution of Ni2+ ions in the Nd2O3 lattice. Analyses of transmission electron microscopy (TEM) and Raman spectroscopy of NNO recorded at room temperature (RT) also substantiate this fact. Besides, no traces of impurities are found in the analyses of XRD, TEM and Raman data. Room temperature hysteresis loop of NNO suggests the presence of weak ferromagnetism (FM) in low field region ( 600 mT), but in high field region paramagnetism of the host is more prominent. Magnetization vs. temperature ( M- T) curve in the entire temperature range (300-5 K) is analyzed successfully by a combined equation generated from three-dimensional (3D) spin wave model and Curie-Weiss law, which suggests the presence of mixed paramagnetic phase together with ferromagnetic phase in the doped sample. The onset of magnetic ordering is analyzed by oxygen vacancy mediated F-center exchange (FCE) coupling mechanism.

Enhanced magnetic and ferroelectric properties in scandium doped nano Bi{sub 2}Fe{sub 4}O{sub 9}

Energy Technology Data Exchange (ETDEWEB)

Dutta, Dimple P., E-mail: dimpled@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Sudakar, C.; Mocherla, Pavana S.V. [Department of Physics, IIT Madras, Chennai 600 036 (India); Mandal, Balaji P.; Jayakumar, Onnatu D. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tyagi, Avesh K., E-mail: aktyagi@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2012-08-15

In this study we report the synthesis of undoped and Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles using sonochemical technique. X-ray diffraction reveals that all samples are single phase with no impurities detected. EDS analysis was done to confirm the extent of Sc{sup 3+} doping in the samples. The size and morphology of the nanoparticles have been analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles show a weak ferromagnetic behavior at room temperature, which is quite different from the linear M-H relationship reported for bulk Bi{sub 2}Fe{sub 4}O{sub 9}. A magnetization of 0.144 {mu}B/f.u. is obtained at 300 K, which is mainly attributed to the uncompensated moments at the disordered particle surface resulting from the reduced coordination of the surface spins, arising due to lattice strain or oxygen deficiency. Addition of Sc{sup 3+} dopant in varying concentrations in these Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles, improves their magnetic as well as ferroelectric properties. The leakage current is considerably reduced and electric polarization increases significantly in case of Bi{sub 2}Fe{sub 4(1-x)}Sc{sub x}O{sub 9} (x = 0.1) nanoparticles. Thus it can be inferred that Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles shows promise as good multiferroic materials. -- Graphical abstract: Undoped and Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles have been synthesized using sonochemical technique. The bi-functionalities of Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles have been demonstrated. The Bi{sub 2}Fe{sub 4(1-x)}Sc{sub x}O{sub 9} (x = 0.1) nanoparticles showed enhanced magnetic and ferroelectric properties with considerably less lossy characteristics compared to the bulk Bi{sub 2}Fe{sub 4}O{sub 9}. Highlights: Black-Right-Pointing-Pointer Phase pure Bi{sub 2}Fe{sub 4}O{sub 9} nanostructures synthesized using a facile

Electrocaloric effect and luminescence properties of lanthanide doped (Na1/2Bi1/2)TiO3 lead free materials

International Nuclear Information System (INIS)

Zannen, M.; Lahmar, A.; Asbani, B.; El Marssi, M.; Khemakhem, H.; Kutnjak, Z.; Es Souni, M.

2015-01-01

Polycrystalline lead-free Sodium Bismuth Titanate (NBT) ferroelectric ceramics doped with rare earth (RE) element are prepared using solid state reaction method. Optical, ferroelectric, and electrocaloric properties were investigated. The introduction of RE 3+ ions in the NBT host lattice shows different light emissions over the wavelength range from visible to near infrared region. The ferroelectric P-E hysteresis loops exhibit an antiferroelectric-like character near room temperature indicating possible existence of a morphotropic phase boundary. The enhanced electrocaloric response was observed in a broad temperature range due to nearly merged phase transitions. Coexistence of optical and electrocaloric properties is very promising for photonics or optoelectronic device applications

High Performance Relaxor-Based Ferroelectric Single Crystals for Ultrasonic Transducer Applications

Directory of Open Access Journals (Sweden)

Yan Chen

2014-07-01

Full Text Available Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3O3-PbTiO3 (PMN-PT have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33~2000 pC/N, kt~60% near the morphotropic phase boundary (MPB. Ternary Pb(In1/2Nb1/2O3-Pb(Mg1/3Nb2/3O3-PbTiO3 (PIN-PMN-PT single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed.

Synthesis and Characterization of Ferroelectric Liquid Crystalline Organosiloxanes Containing 4-(4-undecanyloxy bi-phenyl-1-carboxyloxyphenyl (2S,3S-2-chloro-3-methylvalerate and 4-(4-undecanyloxybenzoyloxybiphenyl (2S,3S-2-chloro-3-methylvalerate

Directory of Open Access Journals (Sweden)

Chih-Hung Lin

2013-10-01

Full Text Available A series of new organosiloxane ferroelectric liquid crystalline (FLC materials have been synthesized, and their mesomorphic and physical properties have been characterized. Four new disiloxanes and trisiloxanes, containing biphenyl 4-hydroxybenzoate and phenyl 4-hydroxybiphenylcarboxylate as mesogenic units and eleven methylene unit as spacers and (2S,3S-2-chloro-3-methylvalerate unit as chiral end groups. The molecule, using three phenyl ring as a mesogenic unit, formulates much wider liquid crystalline phase temperature ranges than that of a two phenyl ring unit. The phenyl arrangement differences of mesogenic unit result in the greater differences of the liquid crystal phase formation. The siloxane molecule induction is helpful to the more regular smectic phase formation and smectic phase stabilization, such as chiral SC (SC* and SB phases. The siloxane molecule is helpful to reduce the phase transition temperature and broaden the liquid crystal temperature range of the SC* phase and, simultaneously, it will not induce chain crystallization phenomenon and dilute the Ps value. The synthesis and characterization of the new FLCs materials, which exhibit a room temperature SC* phase and higher spontaneous polarization are presented.

Synthesis and characterization of lead-free ternary component BST–BCT–BZT ceramic capacitors

Directory of Open Access Journals (Sweden)

Venkata Sreenivas Puli

2014-04-01

Full Text Available Polycrystalline sample of lead-free 1/3(Ba0.70Sr0.30TiO3 + 1/3(Ba0.70Ca0.30TiO3 + 1/3(BaZr0.20Ti0.80O3(BST-BCT-BZT ceramic was synthesized by solid state reaction method. Phase purity and crystal structure of as-synthesized materials was confirmed by X-ray diffraction (XRD. Temperature-dependent dielectric permittivity studies demonstrated frequency-independent behavior, indicating that the studied sample has typical diffuse phase transition behavior with partial thermal hysteresis. A ferroelectric phase transition between cubic and tetragonal phase was noticed near room temperature (~ 330 K. Bulk P–E hysteresis loop showed a saturation polarization of 20.4 μC/cm2 and a coercive field of ~ 12.78 kV/cm at a maximum electric field of ~ 115 kV/cm. High dielectric constant (ε ~ 5773, low dielectric loss (tan δ ~ 0.03 were recorded at room temperature. Discharge energy density of 0.44 J/cm3 and charge energy density of 1.40 J/cm3 were calculated from nonlinear ferroelectric hysteresis loop at maximum electric field. Dielectric constant at variable temperatures and electric fields, ferroelectric to paraelectric phase transition and energy storage properties were thoroughly discussed.

Room temperature ferromagnetism of tin oxide nanocrystal based on synthesis methods

Energy Technology Data Exchange (ETDEWEB)

Sakthiraj, K.; Hema, M. [Department of Physics, Kamaraj College of Engineering and Technology, Virudhunagar 626001, Tamil Nadu (India); Balachandrakumar, K. [Department of Physics, Raja Doraisingam Government Arts College, Sivagangai 630561, Tamil Nadu (India)

2016-04-15

The experimental conditions used in the preparation of nanocrystalline oxide materials play an important role in the room temperature ferromagnetism of the product. In the present work, a comparison was made between sol–gel, microwave assisted sol–gel and hydrothermal methods for preparing tin oxide nanocrystal. X-ray diffraction analysis indicates the formation of tetragonal rutile phase structure for all the samples. The crystallite size was estimated from the HRTEM images and it is around 6–12 nm. Using optical absorbance measurement, the band gap energy value of the samples has been calculated. It reveals the existence of quantum confinement effect in all the prepared samples. Photoluminescence (PL) spectra confirms that the luminescence process originates from the structural defects such as oxygen vacancies present in the samples. Room temperature hysteresis loop was clearly observed in M–H curve of all the samples. But the sol–gel derived sample shows the higher values of saturation magnetization (M{sub s}) and remanence (M{sub r}) than other two samples. This study reveals that the sol–gel method is superior to the other two methods for producing room temperature ferromagnetism in tin oxide nanocrystal.

Self-assembly of gas-phase synthesized magnesium nanoparticles on room temperature substrates

International Nuclear Information System (INIS)

Venturi, F; Calizzi, M; Pasquini, L; Bals, S; Perkisas, T

2015-01-01

Magnesium nanoparticles (NPs) with initial size in the 10–50 nm range were synthesized by inert gas condensation under helium flow and deposited on room temperature substrates. The morphology and crystal structure of the NPs ensemble were investigated as a function of the deposition time by complementary electron microscopy techniques, including high resolution imaging and chemical mapping. With increasing amount of material, strong coarsening phenomena were observed at room temperature: small NPs disappeared while large faceted NPs developed, leading to a 5-fold increase of the average NPs size within a few minutes. The extent of coarsening and the final morphology depended also on the nature of the substrate. Furthermore, large single-crystal NPs were seen to arise from the self-organization of primary NPs units, providing a mechanism for crystal growth. The dynamics of the self-assembly process involves the basic steps of NPs sticking, diffusion on substrate, coordinated rotation and attachment/coalescence. Key features are the surface energy anisotropy, reflected by the faceted shape of the NPs, and the low melting point of the material. The observed phenomena have strong implications in relation to the synthesis and stability of nanostructures based on Mg or other elements with similar features. (paper)

Ferroelectric Electron Emission Principles and Technology

CERN Document Server

Riege, H

1997-01-01

The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

Self-consistent nonlinearly polarizable shell-model dynamics for ferroelectric materials

International Nuclear Information System (INIS)

Mkam Tchouobiap, S.E.; Kofane, T.C.; Ngabireng, C.M.

2002-11-01

We investigate the dynamical properties of the polarizable shellmodel with a symmetric double Morse-type electron-ion interaction in one ionic species. A variational calculation based on the Self-Consistent Einstein Model (SCEM) shows that a theoretical ferroelectric (FE) transition temperature can be derive which demonstrates the presence of a first-order phase transition for the potassium selenate (K 2 SeO 4 ) crystal around Tc 91.5 K. Comparison of the model calculation with the experimental critical temperature yields satisfactory agreement. (author)

Room temperature ferromagnetism in Eu-doped ZnO nanoparticulate powders prepared by combustion reaction method

International Nuclear Information System (INIS)

Franco, A.; Pessoni, H.V.S.; Soares, M.P.

2014-01-01

Nanoparticulate powders of Eu-doped ZnO with 1.0, 1.5, 2.0 and 3.0 at% Eu were synthesized by combustion reaction method using zinc nitrate, europium nitrate and urea as fuel without subsequent heat treatments. X-ray diffraction patterns (XRD) of all samples showed broad peaks consistent with the ZnO wurtzite structure. The absence of extra reflections in the diffraction patterns ensures the phase purity, except for x=0.03 that exhibits small reflection corresponding to Eu 2 O 3 phase. The average crystallite size determined from the most prominent (1 0 1) peak of the diffraction using Scherrer's equation was in good agreement with those determined by transmission electron microscopy (TEM); being ∼26 nm. The magnetic properties measurements were performed using a vibrating sample magnetometer (VSM) in magnetic fields up to 2.0 kOe at room temperature. The hysteresis loops, typical of magnetic behaviors, indicating that the presence of an ordered magnetic structure can exist in the Eu-doped ZnO wurtzite structure at room temperature. The room temperature ferromagnetism behavior increases with the Eu 3+ doping concentration. All samples exhibited the same Curie temperature (T C ) around ∼726 K, except for x=0.01; T C ∼643 K. High resolution transmission electron microscopy (HRTEM) images revealed defects/strain in the lattice and grain boundaries of Eu-doped ZnO nanoparticulate powders. The origin of room temperature ferromagnetism in Eu-doped ZnO nanoparticulate powders was discussed in terms of these defects, which increase with the Eu 3+ doping concentration. - Highlights: • Room-temperature ferromagnetism. • Structural and magnetic properties of nanoparticulate powders of Zn 1−x Eu x O. • Combustion reaction method

Phase transitions of sodium niobate powder and ceramics, prepared by solid state synthesis

Science.gov (United States)

Koruza, J.; Tellier, J.; Malič, B.; Bobnar, V.; Kosec, M.

2010-12-01

Phase transitions of sodium niobate, prepared by the solid state synthesis method, were examined using dielectric measurements, differential scanning calorimetry, and high temperature x-ray diffraction, in order to contribute to the clarification of its structural behavior below 400 °C. Four phase transitions were detected in the ceramic sample using dielectric measurements and differential scanning calorimetry and the obtained temperatures were in a good agreement with previous reports for the transitions of the P polymorph. The anomaly observed by dielectric measurements in the vicinity of 150 °C was frequency dependent and could be related to the dynamics of the ferroelectric nanoregions. The phase transitions of the as-synthesized NaNbO3 powder were investigated using differential scanning calorimetry and high temperature x-ray diffraction. The results show the existence of the Q polymorph at room temperature, not previously reported for the powder, which undergoes a transition to the R polymorph upon heating through a temperature region between 265 and 326.5 °C. This transition is mainly related to the displacement of Na into a more symmetric position and a minor change in the tilting system. The structures at room temperature, 250, 300, and 420 °C were refined by the Rietveld method and the evolution of the tilting system of the octahedral network and cationic displacement are reported.

Phase transitions of sodium niobate powder and ceramics, prepared by solid state synthesis

International Nuclear Information System (INIS)

Koruza, J.; Tellier, J.; Malic, B.; Bobnar, V.; Kosec, M.

2010-01-01

Phase transitions of sodium niobate, prepared by the solid state synthesis method, were examined using dielectric measurements, differential scanning calorimetry, and high temperature x-ray diffraction, in order to contribute to the clarification of its structural behavior below 400 deg. C. Four phase transitions were detected in the ceramic sample using dielectric measurements and differential scanning calorimetry and the obtained temperatures were in a good agreement with previous reports for the transitions of the P polymorph. The anomaly observed by dielectric measurements in the vicinity of 150 deg. C was frequency dependent and could be related to the dynamics of the ferroelectric nanoregions. The phase transitions of the as-synthesized NaNbO 3 powder were investigated using differential scanning calorimetry and high temperature x-ray diffraction. The results show the existence of the Q polymorph at room temperature, not previously reported for the powder, which undergoes a transition to the R polymorph upon heating through a temperature region between 265 and 326.5 deg. C. This transition is mainly related to the displacement of Na into a more symmetric position and a minor change in the tilting system. The structures at room temperature, 250, 300, and 420 deg. C were refined by the Rietveld method and the evolution of the tilting system of the octahedral network and cationic displacement are reported.

Ferroelectric BaTiO3 and LiNbO3 Nanoparticles Dispersed in Ferroelectric Liquid Crystal Mixtures: Electrooptic and Dielectric (Postprint)

Science.gov (United States)

2016-10-14

strength for non- doped LF4 and LiNbO3/LF4 nanocolloids at temperature 30C. 146 R. K . SHUKLA ET AL. 6 Distribution A. Approved for public release (PA...AFRL-RX-WP-JA-2017-0210 FERROELECTRIC BaTiO3 AND LiNbO3 NANOPARTICLES DISPERSED IN FERROELECTRIC LIQUID CRYSTAL MIXTURES: ELECTROOPTIC...COMMAND UNITED STATES AIR FORCE Ferroelectric BaTiO3 and LiNbO3 nanoparticles dispersed in ferroelectric liquid crystal mixtures: Electrooptic and

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

Science.gov (United States)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Synthesis and dielectric characterization of Ba0.6Sr0.4TiO3 ferroelectric ceramics

International Nuclear Information System (INIS)

Nedelcu, L.; Ioachim, A.; Toacsan, M.; Banciu, M.G.; Pasuk, I.; Berbecaru, C.; Alexandru, H.V.

2011-01-01

Ferroelectric ceramics Ba 0.6 Sr 0.4 TiO 3 (BST 40) were prepared, by solid-state reaction in the temperature range 1210-1450 deg. C. Maximum values of the ceramic densities were around 94% of their theoretical value. X-ray diffraction techniques (XRD) and scanning electron spectroscopy (SEM) were used to analyze the structure and the surface morphology of ceramics. Rounded, well defined or abnormal granular growth was observed in the SEM images, vs. sintering conditions and purity of the raw materials. In all samples, BST 40 ceramic is the major phase, but there are also present small amounts of secondary phases, as revealed in XRD diffraction patterns. Permittivity and dielectric loss measurements were performed in the temperature range - 150 to + 150 deg. C, and 150 Hz-5 MHz frequency values. Permittivity values rising from 1200 to 12,500, with increasing sintering temperatures, were recorded. Narrow and well defined transition peaks were noticed at higher sintering temperatures. Curie temperature was around 2 deg. C, for samples with the mentioned composition. Permittivity and losses vs. frequency show different behavior whether BST ceramics are in polar or non-polar state and with the distance toward phase transition. Microwave measurements performed at room temperature have shown lower values of permittivity, compared with similar data at low frequency, and dielectric losses lower than 1% at 0.7 GHz. The sintering conditions (temperatures, sintering time, etc.) and purity of the raw materials lead to important changes of transition temperatures in the polymorphic diagram, which we have built-for the other Ba1-xSrxTiO3 compositions (x = 0.25-0.90) sintered at 1260 deg. C for 2 h.

Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

KAUST Repository

Bhansali, Unnat Sampatraj

2012-09-01

Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

KAUST Repository

Bhansali, Unnat Sampatraj; Khan, Yasser; Alshareef, Husam N.

2012-01-01

Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

Synthesis of Eu3+-doped calcium and strontium carbonate phosphors at room temperature

International Nuclear Information System (INIS)

Pan Yuexiao; Wu Mingmei; Su Qiang

2003-01-01

Red phosphors CaCO 3 :Eu 3+ and SrCO 3 :Eu 3+ have been prepared by co-precipitation with ammonium bicarbonate (NH 4 HCO 3 ) at room temperature. Pure calcite CaCO 3 can be obtained by prolonging the reaction time at 220 deg. C and it decomposes to cubic CaO at 1000 deg. C. Trivalent Eu 3+ acts as a luminescent probe to determine both the calcite and the mixed phase of calcite and vaterite phase of CaCO 3 host and to analyze its decomposition process. High temperature sintering improved both the crystallization and luminescence of SrCO 3 :Eu 3+ in aragonite phase

Structure-Function Relationships of Ferroelectric Polymers.

Science.gov (United States)

Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

Functional Properties of Polydomain Ferroelectric Oxide Thin Films

NARCIS (Netherlands)

Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

2017-01-01

The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Tunable, Room Temperature THZ Emitters Based on Nonlinear Photonics

Science.gov (United States)

Sinha, Raju

The Terahertz (1012 Hz) region of the electromagnetic spectrum covers the frequency range from roughly 300 GHz to 10 THz, which is in between the microwave and infrared regimes. The increasing interest in the development of ultra-compact, tunable room temperature Terahertz (THz) emitters with wide-range tunability has stimulated in-depth studies of different mechanisms of THz generation in the past decade due to its various potential applications such as biomedical diagnosis, security screening, chemical identification, life sciences and very high speed wireless communication. Despite the tremendous research and development efforts, all the available state-of-the-art THz emitters suffer from either being large, complex and costly, or operating at low temperatures, lacking tunability, having a very short spectral range and a low output power. Hence, the major objective of this research was to develop simple, inexpensive, compact, room temperature THz sources with wide-range tunability. We investigated THz radiation in a hybrid optical and THz micro-ring resonators system. For the first time, we were able to satisfy the DFG phase matching condition for the above-mentioned THz range in one single device geometry by employing a modal phase matching technique and using two separately designed resonators capable of oscillating at input optical waves and generated THz waves. In chapter 6, we proposed a novel plasmonic antenna geometry – the dimer rod-tapered antenna (DRTA), where we created a hot-spot in the nanogap between the dimer arms with a very large intensity enhancement of 4.1x105 at optical resonant wavelength. Then, we investigated DFG operation in the antenna geometry by incorporating a nonlinear nanodot in the hot-spot of the antenna and achieved continuously tunable enhanced THz radiation across 0.5-10 THz range. In chapter 8, we designed a multi-metallic resonators providing an ultrasharp toroidal response at THz frequency, then fabricated and

Chemical approach to neutral-ionic valence instability, quantum phase transition, and relaxor ferroelectricity in organic charge-transfer complexes

International Nuclear Information System (INIS)

Horiuchi, Sachio; Kumai, Reiji; Okimoto, Yoichi; Tokura, Yoshinori

2006-01-01

Neutral-ionic (NI) phase transition is a reversible switching of organic charge-transfer complexes between distinct valence states by external stimuli. This phase transformation in the low-dimensional system is demonstrated to provide a variety of novel dielectric, structural, and electronic properties. Importantly, ionization of the electron donor-acceptor pairs is usually accompanied by a ferroelectric or antiferroelectric order of the molecular lattice, leading to huge dielectric response near the transition point. Although these characteristics are potentially useful for future electronic and optical applications, the thermally accessible NI transition (TINIT) is still an extremely rare case. The TINIT compounds including some new materials are overviewed in order to provide convenient guides to their design and experimental identifications. The phase transition and dielectric properties can be closely controlled in various ways depending on chemical and physical modifications of the crystals. Among them, a quantum phase transition and relaxor ferroelectricity, both of which are currently attracting subjects from both scientific and practical perspectives, are highlighted as the first achievements in organic charge-transfer complexes

Phenomenological theory of size effects in ultrafine ferroelectric particles (PbTiO3-type)

International Nuclear Information System (INIS)

Jiang, B.; Bursill, L.A.

1998-01-01

A new phenomenological model is proposed and discussed to study the size effects on phase transitions in PbTiO 3 -type ferroelectric particles. This model, by taking size effects on the phenomenological Landau-Ginzburg-Devonshire coefficients into consideration, can successfully explain the size effects on Curie temperature, c/a ratio, thermal and dielectric properties of lead-titanate-type ferroelectric particles. Theoretical and experimental results for PbTiO 3 fine particles are also compared and discussed. The relationship between the current model and the model of Zhong et al (Phys. Rev. B 50, 698 (1994)) is also presented. (authors)

Studies on room temperature electrochemical oxidation and its effect on the transport properties of TBCCO films

International Nuclear Information System (INIS)

Shirage, P M; Shivagan, D D; Pawar, S H

2004-01-01

A novel room temperature electrochemical process for the synthesis of single-phase Tl 2 Ba 2 Ca 2 Cu 3 O 10 (TBCCO/Tl-2223) superconducting films has been developed. Electrochemical parameters were optimized by studying linear sweep voltammetry (LSV), cyclic voltammetry (CV) and chronoamperometry (CA) for the deposition of Tl-Ba-Ca-Cu alloy at room temperature. The superconducting films of the TBCCO were obtained by two oxidation techniques. In the first technique, the electrodeposited Tl-Ba-Ca-Cu alloyed films were oxidized at various temperatures in flowing oxygen atmosphere. In the second technique, stoichiometric electrocrystallization to get Tl 2 Ba 2 Ca 2 Cu 3 O 10 (Tl-2223) was completed by electrochemically intercalating oxygen species into Tl-Ba-Ca-Cu alloy at room temperature for various lengths of time. The oxygen content in the samples was varied by varying the electrochemical oxidation period, and the changes in the crystal structure, superconducting transition temperature (T c ) and critical current density (J c ) were recorded. The high temperature furnace oxidation technique was replaced by the room temperature electrochemical oxidation technique. The dependence of superconducting parameters on oxygen content is correlated with structure-property relations

Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

Science.gov (United States)

Wei, Lan-ying; Lian, Chao; Meng, Sheng

2017-05-01

First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, A., E-mail: perumal@iitg.ernet.in [Department of Physics, Indian institute of Technology Guwahati, Guwahati 781 039 (India)

2015-08-15

We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO) band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μ{sub B}/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (T{sub C}) around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR) studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high T{sub C} and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

Directory of Open Access Journals (Sweden)

Patta Ravikumar

2015-08-01

Full Text Available We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μB/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (TC around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high TC and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

International Nuclear Information System (INIS)

Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

2010-01-01

Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

High-accuracy determination for optical indicatrix rotation in ferroelectric DTGS

OpenAIRE

O.S.Kushnir; O.A.Bevz; O.G.Vlokh

2000-01-01

Optical indicatrix rotation in deuterated ferroelectric triglycine sulphate is studied with the high-accuracy null-polarimetric technique. The behaviour of the effect in ferroelectric phase is referred to quadratic spontaneous electrooptics.

Room temperature ferromagnetism in a phthalocyanine based carbon material

International Nuclear Information System (INIS)

Honda, Z.; Sato, K.; Sakai, M.; Fukuda, T.; Kamata, N.; Hagiwara, M.; Kida, T.

2014-01-01

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T c  = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material

Room temperature ferromagnetism in a phthalocyanine based carbon material

Energy Technology Data Exchange (ETDEWEB)

Honda, Z., E-mail: honda@fms.saitama-u.ac.jp; Sato, K.; Sakai, M.; Fukuda, T.; Kamata, N. [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570 (Japan); Hagiwara, M.; Kida, T. [KYOKUGEN (Center for Quantum Science and Technology under Extreme Conditions), Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2014-02-07

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T{sub c} = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material.

Pressure-induced ferroelectric to antiferroelectric phase transformation in porous PZT95/5 ceramics

International Nuclear Information System (INIS)

Zeng, T.; Dong, X.L.; Chen, X.F.; Yao, C.H.; He, H.L.

2007-01-01

The hydrostatic pressure-induced ferroelectric to antiferroelectric (FE-AFE) phase transformation of PZT95/5 ceramics was investigated as a function of porosity, pore shape and pore size. FE-AFE phase transformations were more diffuse and occurred at lower hydrostatic pressures with increasing porosity. The porous PZT95/5 ceramics with spherical pores exhibited higher transformation pressures than those with irregular pores. Moreover, FE-AFE phase transformations of porous PZT95/5 ceramics with polydisperse irregular pores were more diffuse than those of porous PZT95/5 ceramics with monodisperse irregular pores. The relation between pore structure and hydrostatic pressure-induced FE-AFE transformation was established according to stress concentration theory. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray diffraction, dielectric, and Raman spectroscopy studies of BaSrTiO{sub 3}-NaNbO{sub 3} ceramic

Energy Technology Data Exchange (ETDEWEB)

Abdessalem, L. Ben; Aydi, S.; Aydi, A.; Maalej, A.; Khemakhem, H. [Universite de Sfax, Laboratoire des Materiaux Multifonctionnels et Applications (LaMMA), Faculte des Sciences de Sfax (FSS), Sfax (Tunisia); Sassi, Z. [Laboratoire de Genie Electrique et Ferroelectricite (LGEF) de L' INSA de Lyon, Villeurbanne (France)

2017-05-15

Ba{sub 0.837}Sr{sub 0.093}Na{sub 0.07}Ti{sub 0.93}Nb{sub 0.07}O{sub 3} (BSNTN) ceramic was synthesized by the solid-state reaction at 1350 C for 3 h. The crystal structure, investigated by X-ray diffraction at room temperature, revealed a single-phase perovskite crystallizing with tetragonal P4mm group space. Dielectric properties were investigated as a function of applied frequency. The ferroelectric behavior has been confirmed by hysteresis investigation. The evolution of the Raman spectra was used to study the variations of the basic phase transition of BaTiO{sub 3}, at room temperature. It shows the introduction of a disorder in this composition, thus favoring a ferroelectric relaxor behavior. (orig.)

HRTEM analysis on nanocrystalline BaTiO3 and PbTiO3: size effects on ferroelectric phase transition temperature

International Nuclear Information System (INIS)

Bursill, L.A.; Jiang, B.; Peng, J.L.; Zhong, W.L.; Zhang, P.L.

1997-01-01

High-Resolution Transmission Electron Microscopic studies of nanocrystaline particles of BaTiO 3 and PbTiO 3 are reported. There are characteristic differences observed for BaTiO 3 prepared using sol gel (SG) and steric acid gel (SAG) methods. The former exhibit a critical size below which there is no paraelectric/ferroelectric phase transition, whereas BaTiO 3 prepared via the SAG route remained cubic for all conditions. The SAG preparations always showed chemical intergrowth defects whereas the SG preparations were single phase. Atomic resolution images of both varieties showed interesting surface steps and surface relaxations/reconstructions of some facets. Nanocrystalline PbTiO 3 prepared by the SG route remains tetragonal, albeit with decreasing c/a ratio, down to 25nm diameter. HRTEM observations of nanocrystalline PbTiO 3 are also presented. X-ray diffraction, dielectric and Raman scattering measurements also demonstrate pronounced size effects. The relationship between the observed nanostructures and size effects on the physical properties is discussed. 6 refs., 1 tab., 6 figs

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Neutron diffraction study of crystal structures of deuterated glycinium phosphite in paraelectric and ferroelectric phases

International Nuclear Information System (INIS)

Machida, Mitsuo; Uchida, Hiroyuki; Ishibashi, Toku; Taniguchi, Hiroki; Komukae, Masaru; Osaka, Toshio; Koyano, Nobumitsu

2004-01-01

Crystal structure of deuterated glycinium phosphite was studied in the paraelectric (P) phase at 348 K and in the ferroelectric (F) phase at 223 K by means of the single crystal neutron diffraction. Deuteration rate is estimated to be 0.939 by the least-squares refinement. In the P phase, quasi-one-dimensional hydrogen bond chains are built by mutually linking the DPO 3 2- anions through two different types of hydrogen bonds with the bond angles of 179.2 and 171.6deg. Two independent deuterons within the hydrogen bonds forming the chains are disordered over two sites separated by 0.545 and 0.539A. In the F phase, they order at a position nearly equal to one of two sites related by the disorder in the P phase. With the ordering of the deuterons, the P-O bonds with covalently bonded deuteron elongate, and those without covalently bonded deuteron reduce their lengths to some extend from the values determined in the P phase. Two oxygens involved in the hydrogen bond with the bond angle 179.2deg exhibits especially large displacements in the F phase. This suggests strongly an importance of this hydrogen bond in the polarization appearance and in the ferroelectric transition. Comparison with results of non-deuterated salt indicates that only the hydrogen bonds forming the chains show significant isotope shift. In particular, the hydrogen bond with the bond angle 179.2deg exhibits the most pronounced shift on the angle parameter defined by the angle between the line connecting two sites of disordered proton or deuteron and the line connecting two oxygens involved in the hydrogen bond. (author)

Electrical properties of niobium doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

International Nuclear Information System (INIS)

Parida, Geetanjali; Bera, J.

2013-01-01

Bismuth layer structured ferroelectrics (BLSFs) have attracted much attention because of their potential applications in non-volatile ferroelectric random access memories and high temperature piezoelectric. They are very attractive for these applications due to their fatigue free nature and environment friendly lead-free composition. BLSF crystal structure has layers of bismuth oxide and pseudo perovskite block stacked alternately along their c-direction, For commercial application, numerous efforts have been made to improve the electrical properties of BLSFs. Some effective approaches are: (i) doping at A-site, (ii) high valentcation doping at B-site and (iii) formation of intergrowth between different BLSFs. The intergrowth BLSFs are consist of regular stacking of one half the unit cell of m-member structure and one half the unit cell of (m+1) member BLSF structure along their c-axis. In this report, Nb-doped Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 intergrowth ceramics have been prepared by modified oxalate route. XRD phase analysis confirmed the formation of single phase compound. Nb-doping does not affect the basic crystal structure of the intergrowth. SEM micrographs showed that the grain size of the ceramics decreases with Nb-doping. The temperature dependence of dielectric constant and losses was investigated in the temperature range 30 to 800℃ and frequency range 1 kHz to 1 MHz. With Nb-doping, the T c of the ferroelectrics reduces and peak permittivity increases. Doping also introduces small relaxor behaviour in the ferroelectrics. The dc conductivity of the ceramics decreases with doping. The remnant polarization (Pr) of the intergrowth ferroelectrics is increased with Nb doping. (author)

Ferroelectric TGS ((NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4) under high pressure

CERN Document Server

Kobayashi, Y; Furuta, H; Endo, S; Deguchi, K

2002-01-01

The ferroelectric transition temperature T sub c of (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS), which is a typical order-disorder-type ferroelectric, was determined by dielectric constant and Raman scattering measurements under high pressure. T sub c increased, passed through a maximum and then decreased slightly with increasing pressure, and then abruptly dropped at about 2.5 GPa, where a transition to a new high-pressure phase was confirmed to exist. A tentative p-T phase diagram was proposed for TGS.

Room temperature deformation of in-situ grown quasicrystals embedded in Al-based cast alloy

Directory of Open Access Journals (Sweden)

Boštjan Markoli

2013-12-01

Full Text Available An Al-based cast alloy containing Mn, Be and Cu has been chosen to investigate the room temperature deformation behavior of QC particles embedded in Al-matrix. Using LOM, SEM (equipped with EDS, conventional TEM with SAED and controlled tensile and compression tests, the deformation response of AlMn2Be2Cu2 cast alloy at room temperature has been examined. Alloy consisted of Al-based matrix, primary particles and eutectic icosahedral quasicrystalline (QC i-phase and traces of Θ-Al2Cu and Al10Mn3. Tensile and compression specimens were used for evaluation of mechanical response and behavior of QC i-phase articles embedded in Al-cast alloy. It has been established that embedded QC i-phase particles undergo plastic deformation along with the Al-based matrix even under severe deformation and have the response resembling that of the metallic materials by formation of typical cup-and-cone feature prior to failure. So, we can conclude that QC i-phase has the ability to undergo plastic deformation along with the Al-matrix to greater extent contrary to e.g. intermetallics such as Θ-Al2Cu for instance.

Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

Science.gov (United States)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

2014-02-01

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi5Ti3FeO15 ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200-873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property.

On bistable states retention in ferroelectric Langmuir-Blodgett films

Science.gov (United States)

Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

2003-08-01

A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Directory of Open Access Journals (Sweden)

Huaping Wu

2016-01-01

Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Multidimensional dynamic piezoresponse measurements. Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

International Nuclear Information System (INIS)

Vasudevan, Rama K.; Zhang, Shujun; Okatan, Mahmut Baris; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

2015-01-01

Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg 1/3 Nb 2/3 )O 3-x PbTiO 3 (PMN-xPT) remains unprobed at the mesoscopic level. We use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias the average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. As a result, these studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFexO3−δ Thin Films

Directory of Open Access Journals (Sweden)

Yi-Guang Wang

2017-09-01

Full Text Available Sr(Ti1−xFexO3−δ (0 ≤ x ≤ 0.2 thin films were grown on Si(100 substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFexO3−δ thin films, were investigated by using the X-ray diffractometer (XRD, atomic force microscopy (AFM, the ferroelectric test system, and the vibrating sample magnetometer (VSM. After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFexO3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFexO3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1O3−δ thin films were also discussed in detail.

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

Continuous-wave room-temperature diamond maser

Science.gov (United States)

Breeze, Jonathan D.; Salvadori, Enrico; Sathian, Juna; Alford, Neil Mcn.; Kay, Christopher W. M.

2018-03-01

The maser—the microwave progenitor of the optical laser—has been confined to relative obscurity owing to its reliance on cryogenic refrigeration and high-vacuum systems. Despite this, it has found application in deep-space communications and radio astronomy owing to its unparalleled performance as a low-noise amplifier and oscillator. The recent demonstration of a room-temperature solid-state maser that utilizes polarized electron populations within the triplet states of photo-excited pentacene molecules in a p-terphenyl host paves the way for a new class of maser. However, p-terphenyl has poor thermal and mechanical properties, and the decay rates of the triplet sublevel of pentacene mean that only pulsed maser operation has been observed in this system. Alternative materials are therefore required to achieve continuous emission: inorganic materials that contain spin defects, such as diamond and silicon carbide, have been proposed. Here we report a continuous-wave room-temperature maser oscillator using optically pumped nitrogen–vacancy defect centres in diamond. This demonstration highlights the potential of room-temperature solid-state masers for use in a new generation of microwave devices that could find application in medicine, security, sensing and quantum technologies.

Neutron scattering techniques for betaine calcium chloride dihydrate under applied external field (temperature, electric field and hydrostatic pressure); Etude par diffusion de neutrons du chlorure de calcium et de betaine dihydrate sous champ externe applique (temperature, champ electrique et pression hydrostatique)

Energy Technology Data Exchange (ETDEWEB)

Hernandez, O

1997-11-17

We have studied with neutron scattering techniques betaine calcium chloride dihydrate (BCCD), a dielectric aperiodic crystal which displays a Devil`s staircase type phase diagram made up of several incommensurate and commensurate phases, having a range of stability very sensitive to temperature, electric field and hydrostatic pressure. We have measured a global hysteresis of {delta}(T) of about 2-3 K in the two incommensurate phases. A structural study of the modulated commensurate phases 1/4 and 1/5 allows us to evidence that the atomic modulation functions are anharmonic. The relevance of the modelization of the modulated structure by polar Ising pseudo-spins is then directly established. On the basis of group theory calculation in the four dimensional super-space, we interpret this anharmonic modulation as a soliton regime with respect to the lowest-temperature non modulated ferroelectric phase. The continuous character of the transition to the lowest-temperature non modulated phase and the diffuse scattering observed in this phase are accounted for the presence of ferroelectric domains separated by discommensurations. Furthermore, we have shown that X-rays induce in BCCD a strong variation with time of irradiation of the intensity of satellite peaks, and more specifically for third order ones. This is why the `X-rays` structural model is found more harmonic than the `neutron` one. Under electric field applied along the vector b axis, we confirm that commensurate phases with {delta} = even/odd are favoured and hence are polar along this direction. We have evidenced at 10 kV / cm two new higher order commensurate phases in the phase INC2, corroborating the idea of a `complete` Devil`s air-case phase diagram. A phenomenon of generalized coexistence of phases occurs above 5 kV / cm. We have characterized at high field phase transitions between `coexisting` phases, which are distinguishable from classical lock-in transitions. Under hydrostatic pressure, our results

Room temperature ionic liquids enhanced the speciation of Cr(VI) and Cr(III) by hollow fiber liquid phase microextraction combined with flame atomic absorption spectrometry

Energy Technology Data Exchange (ETDEWEB)

Zeng, Chujie, E-mail: cjzeng@126.com [Department of Chemistry and Material, Yulin Normal College, Yulin, Guangxi 537000 (China); Lin, Yao; Zhou, Neng; Zheng, Jiaoting; Zhang, Wei [Department of Chemistry and Material, Yulin Normal College, Yulin, Guangxi 537000 (China)

2012-10-30

Highlights: Black-Right-Pointing-Pointer First reported enhancement effect of RTILs in HF-LPME for the speciation of chromium. Black-Right-Pointing-Pointer The addition of RTILs led to 3.5 times improvement of the sensitivity of Cr(VI). Black-Right-Pointing-Pointer The proposed method is a simplicity, sensitivity, low cost, green method. - Abstract: A new method for the speciation of Cr(VI) and Cr(III) based on enhancement effect of room temperature ionic liquids (RTILs) for hollow fiber liquid phase microextraction (HF-LPME) combined with flame atomic absorption spectrometry (FAAS) was developed. Room temperature ionic liquids (RTILs) and diethyldithiocarbamate (DDTC) were used enhancement reagents and chelating reagent, respectively. The addition of room temperature ionic liquids led to 3.5 times improvement in the determination of Cr(VI). In this method, Cr(VI) reacts with DDTC yielding a hydrophobic complex, which is subsequently extracted into the lumen of hollow fiber, whereas Cr(III) is remained in aqueous solutions. The extraction organic phase was injected into FAAS for the determination of Cr(VI). Total Cr concentration was determined after oxidizing Cr(III) to Cr(VI) in the presence of KMnO{sub 4} and using the extraction procedure mentioned above. Cr(III) was calculated by subtracting of Cr(VI) from the total Cr. Under optimized conditions, a detection limit of 0.7 ng mL{sup -1} and an enrichment factor of 175 were achieved. The relative standard deviation (RSD) was 4.9% for Cr(VI) (40 ng mL{sup -1}, n = 5). The proposed method was successfully applied to the speciation of chromium in natural water samples with satisfactory results.

Room temperature ionic liquids enhanced the speciation of Cr(VI) and Cr(III) by hollow fiber liquid phase microextraction combined with flame atomic absorption spectrometry

International Nuclear Information System (INIS)

Zeng, Chujie; Lin, Yao; Zhou, Neng; Zheng, Jiaoting; Zhang, Wei

2012-01-01

Highlights: ► First reported enhancement effect of RTILs in HF-LPME for the speciation of chromium. ► The addition of RTILs led to 3.5 times improvement of the sensitivity of Cr(VI). ► The proposed method is a simplicity, sensitivity, low cost, green method. - Abstract: A new method for the speciation of Cr(VI) and Cr(III) based on enhancement effect of room temperature ionic liquids (RTILs) for hollow fiber liquid phase microextraction (HF-LPME) combined with flame atomic absorption spectrometry (FAAS) was developed. Room temperature ionic liquids (RTILs) and diethyldithiocarbamate (DDTC) were used enhancement reagents and chelating reagent, respectively. The addition of room temperature ionic liquids led to 3.5 times improvement in the determination of Cr(VI). In this method, Cr(VI) reacts with DDTC yielding a hydrophobic complex, which is subsequently extracted into the lumen of hollow fiber, whereas Cr(III) is remained in aqueous solutions. The extraction organic phase was injected into FAAS for the determination of Cr(VI). Total Cr concentration was determined after oxidizing Cr(III) to Cr(VI) in the presence of KMnO 4 and using the extraction procedure mentioned above. Cr(III) was calculated by subtracting of Cr(VI) from the total Cr. Under optimized conditions, a detection limit of 0.7 ng mL −1 and an enrichment factor of 175 were achieved. The relative standard deviation (RSD) was 4.9% for Cr(VI) (40 ng mL −1 , n = 5). The proposed method was successfully applied to the speciation of chromium in natural water samples with satisfactory results.

Local switching of two-dimensional superconductivity using the ferroelectric field effect

Science.gov (United States)

Takahashi, K. S.; Gabay, M.; Jaccard, D.; Shibuya, K.; Ohnishi, T.; Lippmaa, M.; Triscone, J.-M.

2006-05-01

Correlated oxides display a variety of extraordinary physical properties including high-temperature superconductivity and colossal magnetoresistance. In these materials, strong electronic correlations often lead to competing ground states that are sensitive to many parameters-in particular the doping level-so that complex phase diagrams are observed. A flexible way to explore the role of doping is to tune the electron or hole concentration with electric fields, as is done in standard semiconductor field effect transistors. Here we demonstrate a model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied. We use a single-crystal film of the perovskite superconductor Nb-doped SrTiO3 as the superconducting channel and ferroelectric Pb(Zr,Ti)O3 as the gate oxide. Atomic force microscopy is used to locally reverse the ferroelectric polarization, thus inducing large resistivity and carrier modulations, resulting in a clear shift in the superconducting critical temperature. Field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature. This unique system could lead to a field of research in which devices are realized by locally defining in the same material superconducting and normal regions with `perfect' interfaces, the interface being purely electronic. Using this approach, one could potentially design one-dimensional superconducting wires, superconducting rings and junctions, superconducting quantum interference devices (SQUIDs) or arrays of pinning centres.

Losses in Ferroelectric Materials

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-01-01

loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed. PMID:25814784

Losses in Ferroelectric Materials.

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-03-01

loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed.

Neutron scattering techniques for betaine calcium chloride dihydrate under applied external field (temperature, electric field and hydrostatic pressure)

International Nuclear Information System (INIS)

Hernandez, O.

1997-01-01

We have studied with neutron scattering techniques betaine calcium chloride dihydrate (BCCD), a dielectric aperiodic crystal which displays a Devil's staircase type phase diagram made up of several incommensurate and commensurate phases, having a range of stability very sensitive to temperature, electric field and hydrostatic pressure. We have measured a global hysteresis of δ(T) of about 2-3 K in the two incommensurate phases. A structural study of the modulated commensurate phases 1/4 and 1/5 allows us to evidence that the atomic modulation functions are anharmonic. The relevance of the modelization of the modulated structure by polar Ising pseudo-spins is then directly established. On the basis of group theory calculation in the four dimensional super-space, we interpret this anharmonic modulation as a soliton regime with respect to the lowest-temperature non modulated ferroelectric phase. The continuous character of the transition to the lowest-temperature non modulated phase and the diffuse scattering observed in this phase are accounted for the presence of ferroelectric domains separated by discommensurations. Furthermore, we have shown that X-rays induce in BCCD a strong variation with time of irradiation of the intensity of satellite peaks, and more specifically for third order ones. This is why the 'X-rays' structural model is found more harmonic than the 'neutron' one. Under electric field applied along the vector b axis, we confirm that commensurate phases with δ = even/odd are favoured and hence are polar along this direction. We have evidenced at 10 kV / cm two new higher order commensurate phases in the phase INC2, corroborating the idea of a 'complete' Devil's air-case phase diagram. A phenomenon of generalized coexistence of phases occurs above 5 kV / cm. We have characterized at high field phase transitions between 'coexisting' phases, which are distinguishable from classical lock-in transitions. Under hydrostatic pressure, our results contradict

Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

International Nuclear Information System (INIS)

Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

2009-01-01

Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

Structural evolution of calcite at high temperatures: Phase V unveiled

Science.gov (United States)

Ishizawa, Nobuo; Setoguchi, Hayato; Yanagisawa, Kazumichi

2013-01-01

The calcite form of calcium carbonate CaCO3 undergoes a reversible phase transition between Rc and Rm at ~1240 K under a CO2 atmosphere of ~0.4 MPa. The joint probability density function obtained from the single-crystal X-ray diffraction data revealed that the oxygen triangles of the CO3 group in the high temperature form (Phase V) do not sit still at specified positions in the space group Rm, but migrate along the undulated circular orbital about carbon. The present study also shows how the room temperature form (Phase I) develops into Phase V through an intermediate form (Phase IV) in the temperature range between ~985 K and ~1240 K. PMID:24084871

Electric Field-Induced Large Strain in Ni/Sb-co Doped (Bi0.5Na0.5) TiO3-Based Lead-Free Ceramics

Science.gov (United States)

Li, Liangliang; Hao, Jigong; Xu, Zhijun; Li, Wei; Chu, Ruiqing

2018-02-01

Lead-free piezoelectric ceramics (Bi0.5Na0.5)0.935Ba0.065Ti1- x (Ni0.5Sb0.5) x O3 (BNBT6.5- xNS) have been fabricated using conventional solid sintering technique. The effect of (Ni, Sb) doping on the phase structure and electrical properties of BNBT6.5 ceramics were systematically investigated. Results show that the addition of (Ni, Sb) destroyed the ferroelectric long-range order of BNBT6.5 and shifted the ferroelectric-relaxor transition temperature ( T F-R) down to room temperature. Thus, this process induced an ergodic relaxor phase at zero field in samples with x = 0.005. Under the electric field, the ergodic relaxor phase could reversibly transform to ferroelectric phase, which promotes the strain response with peak value of 0.38% (at 80 kV/cm, corresponding to d 33 * = 479 pm/V) at x = 0.005. Temperature-dependent measurements of both polarization and strain confirmed that the large strain originated from a reversible field-induced ergodic relaxor to ferroelectric phase transformation. The proposed material exhibits potential for nonlinear actuators.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

2016-01-15

The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

Science.gov (United States)

Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

2018-05-01

Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

Microscopic Superconductivity and Room Temperature Electronics of High-Tc Cuprates

International Nuclear Information System (INIS)

Liu Fusui; Chen Wanfang

2008-01-01

This paper points out that the Landau criterion for macroscopic superfluidity of He II is only a criterion for microscopic superfluidity of 4 He, extends the Landau criterion to microscopic superconductivity in fermions (electron and hole) system and system with Cooper pairs without long-range phase coherence. This paper gives another three non-superconductive systems that are of microscopic superconductivity. This paper demonstrates that one application of microscopic superconductivity is to establish room temperature electronics of the high-T c cuprates

Spontaneous polarization and pyroelectric effect in improper ferroelectrics-ferroelastics Gd2(MoO4)3 and Tb2(MoO4)3 at low temperature

International Nuclear Information System (INIS)

Matyjasik, S; Shaldin, Yu.V.

2013-01-01

Experimental dependencies for spontaneous polarization ΔP s (T) and pyroelectric coefficient γ s (T)for Gd 2 (MoO 4 ) 3 (GMO) and Tb 2 (MoO 4 ) 3 (TMO) reported here differs from those for intrinsic ferroelectrics. We found fundamental distinction in GMO and TMO samples behavior at their repolarization at the fixed temperatures 300 and 4.2 K. In TMO monodomainization temperature does not affect experimental data, while in GMO monodomainization at 4.2 K results in increase of ΔP s (T) by order of magnitude at 85 K and γ s (T) dependence shows well-defined anomalies, reaching a record magnitude of 3 centre dot 10 -4 C/(m 2 centre dot K) at T = 25 K. At T = 200 K the pyroelectric coefficients values are -1.45 centre dot 10 -6 C/(m 2 centre dot K) and-1.8 centre dot 10 -6 C/(m 2 centre dot K). Taking into account our data, results related to transformation of structure in (001) plane and symmetry reasons we suggested crystallographic model of GMO type improper ferroelectric. It is formed by four meso-tetrahedrons constructed of three coordination tetrahedrons MO 4 (a, b and c types). In the framework of this model we discuss the physical meaning of pseudodeviator Q 12 *, coefficient, that initiate the phase transition at T > 433 K from noncentrosymmetric phase (mm2) to another one (4-bar2m).

Improper ferroelectrics as high-efficiency energy conversion materials

International Nuclear Information System (INIS)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

2017-01-01

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O_3 and BaTiO_3, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca_0_._8_4Sr_0_._1_6)_8[AlO_2]_1_2(MoO_4)_2 (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

Energy Technology Data Exchange (ETDEWEB)

Guo, Hanzheng [Iowa State Univ., Ames, IA (United States)

2014-12-15

Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

Nonsymmorphic cubic Dirac point and crossed nodal rings across the ferroelectric phase transition in LiOsO3

Science.gov (United States)

Yu, Wing Chi; Zhou, Xiaoting; Chuang, Feng-Chuan; Yang, Shengyuan A.; Lin, Hsin; Bansil, Arun

2018-05-01

Crystalline symmetries can generate exotic band-crossing features, which can lead to unconventional fermionic excitations with interesting physical properties. We show how a cubic Dirac point—a fourfold-degenerate band-crossing point with cubic dispersion in a plane and a linear dispersion in the third direction—can be stabilized through the presence of a nonsymmorphic glide mirror symmetry in the space group of the crystal. Notably, the cubic Dirac point in our case appears on a threefold axis, even though it has been believed previously that such a point can only appear on a sixfold axis. We show that a cubic Dirac point involving a threefold axis can be realized close to the Fermi level in the nonferroelectric phase of LiOsO3. Upon lowering temperature, LiOsO3 has been shown experimentally to undergo a structural phase transition from the nonferroelectric phase to the ferroelectric phase with spontaneously broken inversion symmetry. Remarkably, we find that the broken symmetry transforms the cubic Dirac point into three mutually crossed nodal rings. There also exist several linear Dirac points in the low-energy band structure of LiOsO3, each of which is transformed into a single nodal ring across the phase transition.

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

Directory of Open Access Journals (Sweden)

Jianyi Liu

2014-09-01

Full Text Available This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc. that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.

Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

Energy Technology Data Exchange (ETDEWEB)

Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V V; Palto, S P; Yudin, S G [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

2012-04-15

The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 Multiplication-Sign 10{sup -19} m{sup 2}/V{sup 2} (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates with that of the apparent dielectric permittivity, which can be introduced under the condition of ferroelectric polarization switching. The observed electro-optical effect strongly decreases when the frequency increases up to several hundred hertz. The temperature dependence of the effect exhibits clearly pronounced hysteresis in the region of the ferroelectric phase transition.

Determination of Three-Dimensional Morphology and Inner Structure of Second-Phase Inclusions in Metals by Non-Aqueous Solution Electrolytic and Room Temperature Organic Methods

OpenAIRE

Jing Guo; Keming Fang; Hanjie Guo; Yiwa Luo; Shengchao Duan; Xiao Shi; Wensheng Yang

2018-01-01

The secondary-phase particles in metals, particularly those composed of non-metallic materials, are often detrimental to the mechanical properties of metals; thus, it is crucial to control inclusion formation and growth. One of the challenges is determining the three-dimensional morphology and inner structures of such inclusions. In this study, a non-aqueous solution electrolytic method and a room-temperature organic technique were developed based on the principle of electrochemistry to deter...

Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

International Nuclear Information System (INIS)

Hsiao, Ching-Lien; Palisaitis, Justinas; Junaid, Muhammad; Persson, Per O.Å.; Jensen, Jens; Zhao, Qing-Xiang; Hultman, Lars; Chen, Li-Chyong; Chen, Kuei-Hsien; Birch, Jens

2012-01-01

Al 1−x In x N heteroepitaxial layers covering the full composition range have been realized by magnetron sputter epitaxy on basal-plane AlN, GaN, and ZnO templates at room temperature (RT). Both Al 1−x In x N single layers and multilayers grown on these isostructural templates show single phase, single crystal wurtzite structure. Even at large lattice mismatch between the film and the template, for instance InN/AlN (∼ 13% mismatch), heteroepitaxy is achieved. However, RT-grown Al 1−x In x N films directly deposited on non-isostructural c-plane sapphire substrate exhibit a polycrystalline structure for all compositions, suggesting that substrate surface structure is important for guiding the initial nucleation. Degradation of Al 1−x In x N structural quality with increasing indium content is attributed to the formation of more point- and structural defects. The defects result in a prominent hydrostatic tensile stress component, in addition to the biaxial stress component introduced by lattice mismatch, in all RT-grown Al 1−x In x N films. These effects are reflected in the measured in-plane and out-of-plane strains. The effect of hydrostatic stress is negligible compared to the effects of lattice mismatch in high-temperature grown AlN layers thanks to their low amount of defects. We found that Vegard’s rule is applicable to determine x in the RT-grown Al 1−x In x N epilayers if the lattice constants of RT-sputtered AlN and InN films are used instead of those of the strain-free bulk materials. - Highlights: ► Magnetron sputter epitaxy of single-phase Al 1−x In x N(0001) at room temperature ► Growing Al 1−x In x N onto temperature sensitive substrates is desirable. ► Substrate surface structure plays a vital role at nucleation stage. ► Point and extended defects produce hydrostatic tensile stress. ► The applicability of Vegard's rule for these compounds is confirmed.

Improved ferroelectric/piezoelectric properties and bright green/UC red emission in (Li,Ho)-doped CaBi4Ti4O15 multifunctional ceramics with excellent temperature stability and superior water-resistance performance.

Science.gov (United States)

Xiao, Ping; Guo, Yongquan; Tian, Mijie; Zheng, Qiaoji; Jiang, Na; Wu, Xiaochun; Xia, Zhiguo; Lin, Dunmin

2015-10-21

Multifunctional materials based on rare earth ion doped ferro/piezoelectrics have attracted considerable attention in recent years. In this work, new lead-free multifunctional ceramics of Ca1-x(LiHo)x/2Bi4Ti4O15 were prepared by a conventional solid-state reaction method. The great multi-improvement in ferroelectricity/piezoelectricity, down/up-conversion luminescence and temperature stability of the multifunctional properties is induced by the partial substitution of (Li0.5Ho0.5)(2+) for Ca(2+) ions in CaBi4Ti4O15. All the ceramics possess a bismuth-layer structure, and the crystal structure of the ceramics is changed from a four layered bismuth-layer structure to a three-layered structure with the level of (Li0.5Ho0.5)(2+) increasing. The ceramic with x = 0.1 exhibits simultaneously, high resistivity (R = 4.51 × 10(11)Ω cm), good piezoelectricity (d33 = 10.2 pC N(-1)), high Curie temperature (TC = 814 °C), strong ferroelectricity (Pr = 9.03 μC cm(-2)) and enhanced luminescence. These behaviours are greatly associated with the contribution of (Li0.5Ho0.5)(2+) in the ceramics. Under the excitation of 451 nm light, the ceramic with x = 0.1 exhibits a strong green emission peak centered at 545 nm, corresponding to the transition of the (5)S2→(5)I8 level in Ho(3+) ions, while a strong red up-conversion emission band located at 660 nm is observed under the near-infrared excitation of 980 nm at room temperature, arising from the transition of (5)F5→(5)I8 levels in Ho(3+) ions. Surprisingly, the excellent temperature stability of ferroelectricity/piezoelectricity/luminescence and superior water-resistance behaviors of piezoelectricity/luminescence are also obtained in the ceramic with x = 0.1. Our study suggests that the present ceramics may have potential applications in advanced multifunctional devices at high temperature.

Fast Ferroelectric L-Band Tuner for ILC Cavities

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L

2010-03-15

Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

Infrared properties of the organic semiconductor MEM(TCNQ)2 in its high-temperature phase

DEFF Research Database (Denmark)

Yartsev, V. M.; Jacobsen, Claus Schelde

1981-01-01

The infrared spectrum of N-methyl-N-ethylmorpholinium tetra-cyanoquinodimethane, MEM(TCNQ)2, at temperatures above the phase transition at T=335 K is reported. The oscillator strength associated with chargetransfer processes is shifted down in frequency as compared to the room-temperature phase. ...

Field-effect transistor memories based on ferroelectric polymers

Science.gov (United States)

Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

2017-11-01

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

A Designed Room Temperature Multilayered Magnetic Semiconductor

Science.gov (United States)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

The application of nonlinear dynamics in the study of ferroelectric materials

International Nuclear Information System (INIS)

Blochwitz, S.; Habel, R.; Diestelhorst, M.; Beige, H.

1996-01-01

It is well known that the structural phase transitions in ferroelectric materials are connected with strong nonlinear properties. So we can expect all features of nonlinear dynamical systems such as period-doubling cascades and chaos in a dynamical system that contains ferroelectric materials. Therefore we can apply nonlinear dynamics to these ferroelectric materials and we are doing it in two directions: (i) We study the structural phase transitions by analyzing the large signal behaviour with means of nonlinear dynamics. (ii) We control the chaotic behaviour of the system with the method proposed by Ott, Grebogi and Yorke. (authors)

Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

International Nuclear Information System (INIS)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

2014-01-01

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi 5 Ti 3 FeO 15 ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200–873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property

Room temperature luminescence and ferromagnetism of AlN:Fe

Energy Technology Data Exchange (ETDEWEB)

Li, H., E-mail: lihui@mail.iee.ac.cn, E-mail: wjwang@aphy.iphy.ac.cn [The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical engineering, Chinese Academy of Sciences, Beijing 100190 (China); Cai, G. M. [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); Wang, W. J., E-mail: lihui@mail.iee.ac.cn, E-mail: wjwang@aphy.iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2016-06-15

AlN:Fe polycrystalline powders were synthesized by a modified solid state reaction (MSSR) method. Powder X-ray diffraction and transmission electron microscopy results reveal the single phase nature of the doped samples. In the doped AlN samples, Fe is in Fe{sup 2+} state. Room temperature ferromagnetic behavior is observed in AlN:Fe samples. Two photoluminescence peaks located at about 592 nm (2.09 eV) and 598 nm (2.07 eV) are observed in AlN:Fe samples. Our results suggest that AlN:Fe is a potential material for applications in spintronics and high power laser devices.

Magnetocaloric refrigeration near room temperature (invited)

International Nuclear Information System (INIS)

Brueck, E.; Tegus, O.; Thanh, D.T.C.; Buschow, K.H.J.

2007-01-01

Modern society relies on readily available refrigeration. The ideal cooling machine would be a compact, solid state, silent and energy-efficient heat pump that does not require maintenance. Magnetic refrigeration has three prominent advantages compared to compressor-based refrigeration. First, there are no harmful gases involved, second it may be built more compact as the working material is a solid and third magnetic refrigerators generate much less noise. Recently, a new class of magnetic refrigerant materials for room-temperature applications was discovered. These new materials have important advantages over existing magnetic coolants: They exhibit a large magnetocaloric effect (MCE) in conjunction with a magnetic phase transition of first order. This MCE is, larger than that of Gd metal, which is used in the demonstration refrigerators built to explore the potential of this evolving technology. In the present review, we compare the different materials considering both scientific aspects and industrial applicability

Determination of thermal diffusivity at low temperature using the two-beam phase-lag photoacoustic method with observation of phase-transitions

International Nuclear Information System (INIS)

Jorge, M.P.P.

1992-01-01

This study consists of the determination of thermal diffusivity int he temperature range from 77 K to 300 K by the two-beam phase-lag photoacoustic method. Room temperature measurements of NTD (neutron transmutation doping) silicon suggest that the doping process does not affect its thermal properties. For the superconductor Y Ba 2 Cu 3 O 7 - x it has been verified that the sample density affects its thermal diffusivity. The validity of the experimental method on the Li K SO 4 crystal has been examined by using the thermal diffusivity of a Li F crystal and an Y 2 O 3 ceramic, at room temperature. The behavior of the thermal diffusivity as a function of the temperature for the Li K SO 4 crystal shows two anomalies which correspond at phase-transitions of this crystal in the studied temperature range. (author)

Real-time studies of the ferroelectric phase transformations in K2SeO4 and SrTiO3 under the influence of an electric field

International Nuclear Information System (INIS)

Leist, Jeannis-Nicos

2009-01-01

In the framework of this thesis the influence of an electric field on the ferroelectric model systems potassium selenate and strontium titanate was studied. The kinetics of the field-induced phase transformations were observed with stroboscopic scattering methods on a millisecond time scale. In potassium selenate thereby with elastic neutron scattering could be detected that an intense third-order satellite is only to be observed up to 10 K above the lock-in transformation. In this temperature intervall the incommensurable phase consists of a domain structure with well defined discommensurations. At slow cooling under the influence of the electric field a field-induced intermediate phase is formed. It is assumed that charged defects agglomerate and hinder the mechanism of the phase transformation. Both with inelastic neutron scattering and with Raman spectroscopy no dependence of the lattice dynamics on an electric field could be stated. The kinetics of the lock-in transformation in K 2 SeO 4 is by an order of magnitude faster than in the isostructural Rb 2 ZnCl 4 . The time constants vary temperature-independently between 0.2 and 1.2 milliseconds. The faster transformation results possibly from a smaller decommmensuration density and a smaller interaction with defects. With highly resolving γ-diffractometry in could moreover be shown that beside the volume parts of the modulated phases also the modulation coherence changes timely. It is in the stroboscopic experiments moreover a dynamic stabilization of the intermediate phase observed, which is attributed to the generation of mechanical stresses by the fast alternating field. The studies on strontium titanate yielded a distinct dependence of the lattice dynamics on the sample history. Real-time studies with inelastic neutron scattering show that the field-induced ferroelectric phase transformation runs very fastly. The frequency of the soft mode follows directly the alteration of the electric field. From

Phase transition properties of a cylindrical ferroelectric nanowire

Indian Academy of Sciences (India)

Based on the transverse Ising model (TIM) and using the mean-field theory, we inves- ... workers [11–13] to study the static and dynamic properties of ferroelectric superlattices. ... The mean-field expressions is usually used for a qualitative.

Anisotropic phonon coupling in the relaxor ferroelectric (Na1/2Bi1/2)TiO3 near its high-temperature phase transition

Science.gov (United States)

Cai, Ling; Toulouse, Jean; Luo, Haosu; Tian, Wei

2014-08-01

The lead free relaxor Na1/2Bi1/2TiO3 (NBT) undergoes a structural cubic-to-tetragonal transition near 800 K which is caused by the cooperative rotations of O6 octahedra. These rotations are also accompanied by the displacements of the cations and the formation of the polar nanodomains (PNDs) that are responsible for the characteristic dielectric dispersion of relaxor ferroelectrics. Because of their intrinsic properties, spontaneous polarization, and lack of inversion symmetry, these PNDs are also piezoelectric and can mediate an interaction between polarization and strain or couple the optic and acoustic phonons. Because PNDs introduce a local tetragonal symmetry, the phonon coupling they mediate is found to be anisotropic. In this paper we present inelastic neutron scattering results on coupled transverse acoustic (TA) and transverse optic (TO) phonons in the [110] and [001] directions and across the cubic-tetragonal phase transition at TC˜800 K. The phonon spectra are analyzed using a mode coupling model. In the [110] direction, as in other relaxors and some ferroelectric perovskites, a precipitous drop of the TO phonon into the TA branch or "waterfall" is observed at a certain qwf˜0.14 r.l.u. In the [001] direction, the highly overdamped line shape can be fitted with closely positioned bare mode energies which are largely overlapping along the dispersion curves. Two competing lattice coupling mechanism are proposed to explain these observations.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

2016-01-18

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

Lead palladium titanate: A room-temperature multiferroic

Science.gov (United States)

Gradauskaite, Elzbieta; Gardner, Jonathan; Smith, Rebecca M.; Morrison, Finlay D.; Lee, Stephen L.; Katiyar, Ram S.; Scott, James F.

2017-09-01

There have been a large number of papers on bismuth ferrite (BiFe O3 ) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFe O3 is not the ideal multiferroic due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFe O3 ). In the present work we report a comprehensive study of the perovskite PbT i1 -xP dxO3 with 0 phases present in the samples, with special attention paid to minor phases identified as PdO, PbPd O2 , and P d3Pb . The work is remarkable in two ways: Pd is difficult to substitute into A B O3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields).

Synthesis and characterization of CoPt nanoparticles prepared by room temperature chemical reduction with PAMAM dendrimer as template.

Science.gov (United States)

Wan, Haiying; Shi, Shifan; Bai, Litao; Shamsuzzoha, Mohammad; Harrell, J W; Street, Shane C

2010-08-01

We describe an approach to synthesize monodisperse CoPt nanoparticles with dendrimer as template by a simple chemical reduction method in aqueous solution using NaBH4 as reducing agent at room temperature. The as-made CoPt nanoparticles buried in the dendrimer matrix have the chemically disordered fcc structure and can be transformed to the fct phase after annealing at 700 degrees C. This is the first report of dendrimer-mediated room temperature synthesis of monodisperse magnetic nanoparticles in aqueous solution.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

Science.gov (United States)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

International Nuclear Information System (INIS)

Borkar, Hitesh; Rao, Vaibhav; Barvat, Arun; Pal, Prabir; Kumar, Ashok; Dutta, Soma; Tomar, M; Gupta, Vinay; Scott, J F

2016-01-01

We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba 0.6 Bi 0.2 Li 0.2 )TiO 3 (BBLT) having A-site compositionally disordered ABO 3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel–Fulcher (VF) relations. The material shows slim polarization–hysteresis (P – E) loops and excellent displacement coefficients (d 33 ∼ 233 pm V −1 ) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ) . The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi 5+ ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO 6 octahedra; along with asymmetric hybridization between O 2 p and Bi 6 s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research. (paper)

Ferroelectricity in high-density H{sub 2}O ice

Energy Technology Data Exchange (ETDEWEB)

Caracas, Razvan, E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [CNRS, Laboratoire de Géologie de Lyon UMR5276, Ecole Normale Supérieure de Lyon, 46, alleé d’Italie, Université Claude-Bernard Lyon 1, Université de Lyon, 69364 Lyon cedex 07 (France); Hemley, Russell J., E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [Geophysical Laboratory, 5251 Broad Branch Road NW, Carnegie Institution of Washington, Washington, DC 20015 (United States)

2015-04-07

The origin of longstanding anomalies in experimental studies of the dense solid phases of H{sub 2}O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. The presence of local electric fields triggers the preferential parallel orientation of the water molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.

Room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride induced by milling and annealing

Energy Technology Data Exchange (ETDEWEB)

Bolokang, Amogelang S., E-mail: Sylvester.Bolokang@transnet.net [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark, 0127 (South Africa); Tshabalala, Zamaswazi P. [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Malgas, Gerald F. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535 (South Africa); Kortidis, Ioannis [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); West Virginia University, Department of Mechanical & Aerospace Engineering, Evansdale Campus, Morgantown, WV, 26506 (United States); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300 (South Africa); Motaung, David E., E-mail: dmotaung@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa)

2017-06-01

We report on the room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride prepared by milling and annealing at 1100 °C in a nitrogen gas environment. Structural analyses revealed a metastable orthorhombic TiO{sub 2} phase after milling for 120 h. The 120 h milled TiO{sub 2} particles and subsequently annealed in nitrogen gas at 1100 °C showed the formation of titanium oxynitride (TiO{sub x}N{sub y}) with a tetragonal crystal structure. An FCC metastable TiO{sub x}N{sub y} phase was also observed with a lattice parameter a = 4.235 Å. The vibrating sample magnetometer and electron paramagnetic analyses showed that the milled and TiO{sub x}N{sub y} samples possess room temperature ferromagnetism. Gas sensing measurements were carried out toward CH{sub 4} and H{sub 2} gases. The TiO{sub x}N{sub y} nanostructures demonstrated higher sensing response and selectivity to CH{sub 4} gas at room temperature. The enhanced response of 1010 and sensitivity of 50.12 ppm{sup -1} at a concentration of 20 ppm CH{sub 4} are associated with higher surface area, pore diameter and surface defects such as oxygen vacancies and Ti{sup 3+}, as evidenced from the Brunauer–Emmet–Teller, photoluminescence, electron paramagnetic resonance and x-ray photoelectron analyses. - Highlights: • Ball milled of TiO{sub 2} structure revealed metastable orthorhombic phase. • Upon nitridation tetragonal and FCC TiO{sub x}N{sub y} crystal structures were induced. • The magnetic properties of TiO{sub 2} nanoparticles was transformed by milling. • TiO{sub x}N{sub y} sensing response for CH{sub 4} gas at room temperature was high.

Pyroelectric and dielectric properties of lead-free ferroelectric Ba3Nb2O8 ceramic

International Nuclear Information System (INIS)

Pati, Biswajit; Choudhary, R.N.P.; Das, Piyush R.; Parida, B.N.; Padhee, R.

2014-01-01

Graphical abstract: - Highlights: • Barium orthoniobate (lead-free perovskite) crystallizes as palmierite with structural stability. • The material exhibits ferroelectric phase transition of diffuse-type suitable for devices. • The low values of ε r and tan δ at high frequencies makes it a potential candidate for microwave applications. • The material has very good pyroelectric properties for detector application. • The material exhibits smaller value of dc activation energy. - Abstract: The present study highlights ferroelectric phase transition, dielectric, pyroelectric properties and conduction mechanism of highly crystallized barium orthoniobate (Ba 3 Nb 2 O 8 ) ceramic, prepared by a solid-state reaction technique. X-ray diffraction studies show the formation of a single-phase compound in hexagonal crystal system. Detailed studies of dielectric parameters (ε r and tan δ) of the compound as a function of temperature and frequency reveal their independence over a wide range of temperature and frequency. An anomaly in ε r suggests the possible existence of a ferroelectric–paraelectric phase transition of diffuse-type in the material. The low dielectric loss and moderate relative permittivity make this material (with certain modification) a potential candidate for microwave applications. Studies of pyroelectric properties reveal that the materials have reasonably high figure of merit useful for fabrication of pyroelectric detectors. The low-leakage current and negative temperature coefficient of resistance (NTCR) behavior of the sample have been verified from J–E plots. The nature of variation of dc conductivity with temperature confirms the Arrhenius and NTCR behavior of the material

Improper ferroelectrics as high-efficiency energy conversion materials

Energy Technology Data Exchange (ETDEWEB)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2017-05-15

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O{sub 3} and BaTiO{sub 3}, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca{sub 0.84}Sr{sub 0.16}){sub 8}[AlO{sub 2}]{sub 12}(MoO{sub 4}){sub 2} (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetoelectric polymer nanocomposite for flexible electronics

KAUST Repository

Al-Nassar, Mohammed Y.

2015-03-06

This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156 mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites.

Magnetoelectric polymer nanocomposite for flexible electronics

International Nuclear Information System (INIS)

Alnassar, M.; Alfadhel, A.; Ivanov, Yu. P.; Kosel, J.

2015-01-01

This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156 mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites

Magnetoelectric polymer nanocomposite for flexible electronics

KAUST Repository

Al-Nassar, Mohammed Y.; Alfadhel, Ahmed; Ivanov, Yurii P.; Kosel, Jü rgen

2015-01-01

This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156 mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites.

Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

Science.gov (United States)

Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

2006-09-15

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Room temperature deposition of magnetite thin films on organic substrate

International Nuclear Information System (INIS)

Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

2007-01-01

We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

Neutron absorbing room temperature vulcanizable silicone rubber compositions

International Nuclear Information System (INIS)

Zoch, H.L.

1979-01-01

A neutron absorbing composition is described and consists of a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide. 20 claims

Directly patternable high refractive index ferroelectric sol–gel resist

Energy Technology Data Exchange (ETDEWEB)

Garoli, D., E-mail: denis.garoli@iit.it [Istituto Italiano di Tecnologia, Via Morego 16, 16136 Genova (Italy); Della Giustina, G. [Industrial Engineering Department, University of Padova and INSTM, Via Marzolo 9, 35131 Padova (Italy)

2015-08-15

The development of a ferroelectric negative tone sol–gel resist for Ultraviolet (UV) and Electron Beam (EB) lithography is presented. A new system based on Lead Zirconate Titanate (PZT, with formula PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}) was synthesized by sol–gel method. The lithographic performances were investigated and several structures spanning from the micron range down to less than 50 nm have been achieved by UV and EB lithography. The system interaction with UV light and Electron beam was thoroughly characterized by FT-IT spectroscopy. The exposed PZT was annealed at high temperatures in order to study the crystalline phase evolution, the optical constants values and stability of patterned structures. After exposure and annealing, the refractive index of the material can vary from 1.68 up to 2.33 (@400 nm), while the ferroelectric behaviour seems to be maintained after high temperature annealing. These results suggest a possible application of PZT resist not only as ferroelectric but also as nanopatternable high refractive index material. Moreover, direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified and the potentiality for the preparation of high aspect ratio hollow nanostructures will be presented. - Highlights: • A new formula directly patternable PZT high refractive index resist is presented. • The gel is sensitive to both UV and electron beam exposure. • The refractive index can vary from 1.68 up to 2.33 (@400 nm). • Direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified. • High aspect ratio hollow nanostructures will be presented.

Abatement of toluene from gas streams via ferro-electric packed bed dielectric barrier discharge plasma.

Science.gov (United States)

Liang, Wenjun; Li, Jian; Li, Jie; Jin, Yuquan

2009-10-30

Destruction of gaseous toluene via ferro-electric packed bed dielectric barrier discharge plasma in a coaxial cylindrical reactor was carried out at atmospheric pressure and room temperature. The difference among three kinds of reactors was compared in terms of specific energy density (SED), energy yield (EY), toluene decomposition. In order to optimize the geometry of the reactor, the removal efficiency of toluene was compared for various inner electrode diameters. In addition, qualitative analysis on by-products and particular discussion on toluene abatement mechanisms were also presented. It has been found that ferro-electric packed bed DBD reactor could effectively decompose toluene. Toluene removal efficiency enhanced with increasing SED. With respect to toluene conversion, 1.62 mm electrode appeared to be superior to 1.06 mm electrodes. BaTiO3 reactor had the highest toluene removal efficiency among the reactors. For NaNO2 reactor, the highest EY could reach 17.0 mg/kWh to a certain extent.

Abatement of toluene from gas streams via ferro-electric packed bed dielectric barrier discharge plasma

International Nuclear Information System (INIS)

Liang Wenjun; Li Jian; Li Jie; Jin Yuquan

2009-01-01

Destruction of gaseous toluene via ferro-electric packed bed dielectric barrier discharge plasma in a coaxial cylindrical reactor was carried out at atmospheric pressure and room temperature. The difference among three kinds of reactors was compared in terms of specific energy density (SED), energy yield (EY), toluene decomposition. In order to optimize the geometry of the reactor, the removal efficiency of toluene was compared for various inner electrode diameters. In addition, qualitative analysis on by-products and particular discussion on toluene abatement mechanisms were also presented. It has been found that ferro-electric packed bed DBD reactor could effectively decompose toluene. Toluene removal efficiency enhanced with increasing SED. With respect to toluene conversion, 1.62 mm electrode appeared to be superior to 1.06 mm electrodes. BaTiO 3 reactor had the highest toluene removal efficiency among the reactors. For NaNO 2 reactor, the highest EY could reach 17.0 mg/kWh to a certain extent.

Synthesis and high (pressure, temperature) stability of ZnTiO3 polymorphs studied by Raman spectroscopy

Science.gov (United States)

Bernert, T.; Ruiz-Fuertes, J.; Bayarjargal, L.; Winkler, B.

2015-05-01

The phase-purity of ilmenite-type ZnTiO3 prepared by the ceramic method was investigated in dependence of the conditions during ball milling. The previously proposed addition of 2 ml ethanol to the starting materials led to a significant contamination of the product phase after a subsequent sintering process at 1073 K. However, by omitting ethanol this synthesis route led to a phase-pure sample of ZnTiO3 as confirmed by X-ray powder diffraction and Raman spectroscopy. High-temperature high-pressure experiments gave an ilmenite-type to perovskite-type phase boundary with a slope of dT/dP∼-135 K GPa-1 crossing ambient temperature conditions at ∼ 24 GPa in good agreement with previous calculations. Room-temperature high-pressure Raman spectroscopy experiments have shown the stability of the ilmenite-type phase up to a pressure of at least 38.5 GPa, the highest pressure applied in this study, indicating the presence of a kinetic barrier in this phase transition. The synthesis of ferroelectric LiNbO3-type ZnTiO3 was confirmed by second harmonic generation.

Spin-driven pyroelectricity in Ni{sub 3}TeO{sub 6} without ferroelectric signatures of the transition at Neel temperature

Energy Technology Data Exchange (ETDEWEB)

Zhao, L.; Komarek, A.C. [Max-Planck-Institute for Chemical Physics of Solids, Dresden (Germany); Du, C.H. [Department of Physics, Tamkang University, Tamsui, Taiwan (China)

2017-07-15

Here we report on dielectric studies on Ni{sub 3}TeO{sub 6}. We confirm the spin-driven pyroelectric transition at the Neel temperature (T{sub N}) of ∝52.5 K. The measurement of single crystalline and polycrystalline samples excludes a ferroelectric nature of the transition at T{sub N} in this compound. The excellent pyroelectric properties without any intrinsic ferroelectric hysteresis make Ni{sub 3}TeO{sub 6} appropriate for applications in future devices. Pyroelectric measurements on our Ni{sub 3}TeO{sub 6} single crystals. The polarization that appears on cooling through T{sub N} can not be inverted by opposite poling fields (applied when cooling from above T{sub N} to base temperature). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Relaxor ferroelectricity, ferromagnetic and optical second harmonic properties in lanthanum lithium niobate (La0.05Li0.85NbO3) nanoparticles

Science.gov (United States)

Díaz-Moreno, Carlos A.; Ding, Yu; Li, Chunqiang; Portelles, Jorge; Heiras, J.; Hurtado-Macias, A.; Farias, J. R.; González-Hernández, J.; Yacamán, M. J.; López, Jorge

2017-07-01

Relaxor ferroelectricity, ferromagnetism and Second Harmonic Generation properties were founded and studied as a function of a reduction heat treatment at 650 °C in a Ar-5%H2 atmosphere in stoichiometric La0.05Li0.85NbO3 nanoparticles of 40 nm. A diffuse dielectric anomaly related with relaxor behavior from 25 °C to 800 °C in a frequency range from 100 Hz to 1 MHz was founded. It also shows ferromagnetic anhysterestic type and ferroelectric hysteresis loops at room temperature with a magnetic spin remnant of 2.5 × 10-3 emu/g and polarization saturation of 0.235 μC/cm2, remnant polarization of 0.141 μC/cm2, coercive field of 1.35 kV/cm, respectively. It shows very good second harmonic generation signal at 450 nm and 500 nm. High Resolution Transmission Electron Microscopy, X-ray Photoelectron Spectroscopy and Raman spectroscopy, indicate an ABO3 perovskite structure, new electronic binding energy structure for La (5s, 4d), Li (1s), Nb (4s, 3d, 4p) and oxygen (1s, 2s) and new vibrations modes on octahedron NbO6 related to multiferroic single phase nanoparticles, respectively.

Relaxor ferroelectricity, ferromagnetic and optical second harmonic properties in lanthanum lithium niobate (La0.05Li0.85NbO3) nanoparticles

International Nuclear Information System (INIS)

Díaz-Moreno, Carlos A.; Ding, Yu; Li, Chunqiang; Portelles, Jorge; Heiras, J.; Hurtado-Macias, A.; Farias, J.R.; González-Hernández, J.; Yacamán, M.J.

2017-01-01

Relaxor ferroelectricity, ferromagnetism and Second Harmonic Generation properties were founded and studied as a function of a reduction heat treatment at 650 °C in a Ar-5%H 2 atmosphere in stoichiometric La 0.05 Li 0.85 NbO 3 nanoparticles of 40 nm. A diffuse dielectric anomaly related with relaxor behavior from 25 °C to 800 °C in a frequency range from 100 Hz to 1 MHz was founded. It also shows ferromagnetic anhysterestic type and ferroelectric hysteresis loops at room temperature with a magnetic spin remnant of 2.5 × 10 −3 emu/g and polarization saturation of 0.235 μC/cm 2 , remnant polarization of 0.141 μC/cm 2 , coercive field of 1.35 kV/cm, respectively. It shows very good second harmonic generation signal at 450 nm and 500 nm. High Resolution Transmission Electron Microscopy, X-ray Photoelectron Spectroscopy and Raman spectroscopy, indicate an ABO 3 perovskite structure, new electronic binding energy structure for La (5s, 4d), Li (1s), Nb (4s, 3d, 4p) and oxygen (1s, 2s) and new vibrations modes on octahedron NbO 6 related to multiferroic single phase nanoparticles, respectively.

Quantitative evaluation of the piezoelectric response of unpoled ferroelectric ceramics from elastic and dielectric measurements: Tetragonal BaTiO3

Science.gov (United States)

Cordero, F.

2018-03-01

A method is proposed for evaluating the potential piezoelectric response, that a ferroelectric material would exhibit after full poling, from elastic and dielectric measurements of the unpoled ceramic material. The method is based on the observation that the softening in a ferroelectric phase with respect to the paraelectric phase is of piezoelectric origin, and is tested on BaTiO3. The angular averages of the piezoelectric softening in unpoled ceramics are calculated for ferroelectric phases of different symmetries. The expression of the orientational average with the piezoelectric and dielectric constants of single crystal tetragonal BaTiO3 from the literature reproduces well the softening of the Young's modulus of unpoled ceramic BaTiO3, after a correction for the porosity. The agreement is good in the temperature region sufficiently far from the Curie temperature and from the transition to the orthorhombic phase, where the effect of fluctuations should be negligible, but deviations are found outside this region, and possible reasons for this are discussed. This validates the determination of the piezoelectric response by means of purely elastic measurements on unpoled samples. The method is indirect and, for quantitative assessments, requires the knowledge of the dielectric tensor. On the other hand, it does not require poling of the sample, and therefore is insensitive to inaccuracies from incomplete poling, and can even be used with materials that cannot be poled, for example, due to excessive electrical conductivity. While the proposed example of the Young's modulus of a ceramic provides an orientational average of all the single crystal piezoelectric constants, a Resonant Ultrasound Spectroscopy measurement of a single unpoled ceramic sample through the ferroelectric transition can in principle measure all the piezoelectric constants, together with the elastic ones.

All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

KAUST Repository

Khan, Yasser

2012-11-21

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel readout integrated circuit for ferroelectric FPA detector

Science.gov (United States)

Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

2017-11-01

Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

Pentacene on Ni(111): room-temperature molecular packing and temperature-activated conversion to graphene.

Science.gov (United States)

Dinca, L E; De Marchi, F; MacLeod, J M; Lipton-Duffin, J; Gatti, R; Ma, D; Perepichka, D F; Rosei, F

2015-02-21

We investigate, using scanning tunnelling microscopy, the adsorption of pentacene on Ni(111) at room temperature and the behaviour of these monolayer films with annealing up to 700 °C. We observe the conversion of pentacene into graphene, which begins from as low as 220 °C with the coalescence of pentacene molecules into large planar aggregates. Then, by annealing at 350 °C for 20 minutes, these aggregates expand into irregular domains of graphene tens of nanometers in size. On surfaces where graphene and nickel carbide coexist, pentacene shows preferential adsorption on the nickel carbide phase. The same pentacene to graphene transformation was also achieved on Cu(111), but at a higher activation temperature, producing large graphene domains that exhibit a range of moiré superlattice periodicities.

Surface Acoustic Waves in ferroelectrics

Czech Academy of Sciences Publication Activity Database

Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

2004-01-01

Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

The influence of the coexistence of ferroelectric and antiferroelectric states on the lead lanthanum zirconate titanate crystal structure

International Nuclear Information System (INIS)

Ishchuk, V M; Baumer, V N; Sobolev, V L

2005-01-01

We present results of detailed investigation of the crystal structure of Pb 1-3x/2 La x (Zr 1-y Ti y )O 3 solid solutions. In this letter our attention is concentrated on the series of solid solutions with x = 6% usually referred to as relaxor ferroelectrics. We have established the reasons for the non-cubic crystal structure of these solid solutions at the temperatures below T C . It is demonstrated that the peculiarities of the properties of Pb 1-3x/2 La x (Zr 1-y Ti y )O 3 depend on the position of a particular solid solution with respect to the hysteresis ferroelectric-antiferroelectric region in the 'Ti-content-temperature' phase diagram. (letter to the editor)

Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

DEFF Research Database (Denmark)

Ma, Huanming; Qin, Zhiwei; Wang, Zaide

2017-01-01

ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws wer...

Non-linear thermal evolution of the crystal structure and phase transitions of LaFeO3 investigated by high temperature X-ray diffraction

International Nuclear Information System (INIS)

Selbach, Sverre M.; Tolchard, Julian R.; Fossdal, Anita; Grande, Tor

2012-01-01

The crystal structure, anisotropic thermal expansion and structural phase transition of the perovskite LaFeO 3 has been studied by high-temperature X-ray diffraction from room temperature to 1533 K. The structural evolution of the orthorhombic phase with space group Pbnm and the rhombohedral phase with R3 ¯ c structure of LaFeO 3 is reported in terms of lattice parameters, thermal expansion coefficients, atomic positions, octahedral rotations and polyhedral volumes. Non-linear lattice expansion across the antiferromagnetic to paramagnetic transition of LaFeO 3 at T N =735 K was compared to the corresponding behavior of the ferroelectric antiferromagnet BiFeO 3 to gain insight to the magnetoelectric coupling in BiFeO 3 , which is also multiferroic. The first order phase transition of LaFeO 3 from Pbnm to R3 ¯ c was observed at 1228±9 K, and a subsequent transition to Pm3 ¯ m was extrapolated to occur at 2140±30 K. The stability of the Pbnm and R3 ¯ c polymorphs of LaFeO 3 is discussed in terms of the competing enthalpy and entropy of the two crystal polymorphs and the thermal evolution of the polyhedral volume ratio V A /V B . - Graphical abstract: Aniostropic thermal evolution of the lattice parameters and phase transition of LaFeO 3 . Highlights: ► The crystal structure of LaFeO 3 is studied by HTXRD from RT to 1533 K. ► A non-linear expansion across the Néel temperature is observed for LaFeO 3 . ► The ratio V A /V B is used to rationalize the thermal evolution of the structure.

Improved ferroelectric and pyroelectric properties of Pb-doped SrBi4Ti4O15 ceramics for high temperature applications

International Nuclear Information System (INIS)

Venkata Ramana, E.; Graça, M.P.F.; Valente, M.A.; Bhima Sankaram, T.

2014-01-01

Highlights: • Sr 1−x Pb x Bi 4 Ti 4 O 15 (SPBT, x = 0 − 0.4) ceramics were synthesized by soft chemical method. • X-ray diffraction analysis confirmed the formation of bismuth layered structure. • SEM images showed plate like grain morphology with random orientation of plate faces. • Pb-doping resulted in improved ferroelectricity of SrBi 4 Ti 4 O 15 ceramics. • Pb-doped SrBi 4 Ti 4 O 15 exhibited improved pyroelectric properties with high T C . -- Abstract: Ferroelectric properties of Pb-modified strontium bismuth titanate ceramics with chemical formula Sr 1−x Pb x Bi 4 Ti 4 O 15 (x = 0–0.4) were investigated. Polycrystalline ceramics were synthesized by soft chemical method to study the effect of Pb-doping on its physical properties. X-ray diffraction analysis revealed a bismuth layered structure for all the compounds. The doping resulted in an increased tetragonal strain and improved ferroelectric properties. Scanning electron microscope images showed plate like grain morphology with random orientation of platelets. The ferroelectric transition temperature of the ceramics increased systematically from 525 °C to 560 °C with the increase of doping concentration. The piezoelectric coefficient (d 33 ) of the ceramics was enhanced significantly with Pb doping, exhibiting a maximum value of 21.8 pC/N for 40 mol.% Pb-doped SBT. Pyroelectric studies carried out using the Byer–Roundy method indicated that the modified SBT ceramics are promising candidates for high temperature pyroelectric applications

Synthesis of manganese spinel nanoparticles at room temperature by coprecipitation

Energy Technology Data Exchange (ETDEWEB)

Giovannelli, F., E-mail: fabien.giovannelli@univ-tours.fr [GREMAN, UMR 7347 CNRS-CEA, Universite Francois Rabelais, 15 rue de la chocolaterie, 41000 BLOIS (France); Autret-Lambert, C.; Mathieu, C.; Chartier, T.; Delorme, F. [GREMAN, UMR 7347 CNRS-CEA, Universite Francois Rabelais, 15 rue de la chocolaterie, 41000 BLOIS (France); Seron, A [BRGM, 3 Avenue Claude Guillemin, BP 36009, 45060 ORLEANS Cedex 2 (France)

2012-08-15

This paper is focused on a new route to synthesize Mn{sub 3}O{sub 4} nanoparticles by alkalisation by sodium hydroxide on a manganeous solution at room temperature. The precipitates obtained at different pH values have been characterized by XRD and TEM. Since the first addition of sodium hydroxide, a white Mn(OH){sub 2} precipitate appears. At pH=7, {gamma}-MnOOH phase is predominant with needle like shaped particles. At pH=10, hausmanite nanoparticles, which exhibits well defined cubic shape in the range 50-120 nm are obtained. This new precipitation route is a fast and easy environmentally friendly process to obtain well crystallized hausmanite nanoparticles. - Graphical abstract: TEM image showing Mn{sub 3}O{sub 4} particles after a precipitation at pH=10. Highlights: Black-Right-Pointing-Pointer A new route to synthesize Mn{sub 3}O{sub 4} nanoparticles has been demonstrated. Black-Right-Pointing-Pointer Synthesis has been performed by precipitation at room temperature. Black-Right-Pointing-Pointer The size of the Mn{sub 3}O{sub 4} nanoparticles is between 50 and 120 nm.

Quantum switching of polarization in mesoscopic ferroelectrics

International Nuclear Information System (INIS)

Sa de Melo, C.A.

1996-01-01

A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

Room Temperature Memory for Few Photon Polarization Qubits

Science.gov (United States)

Kupchak, Connor; Mittiga, Thomas; Jordan, Bertus; Nazami, Mehdi; Nolleke, Christian; Figueroa, Eden

2014-05-01

We have developed a room temperature quantum memory device based on Electromagnetically Induced Transparency capable of reliably storing and retrieving polarization qubits on the few photon level. Our system is realized in a vapor of 87Rb atoms utilizing a Λ-type energy level scheme. We create a dual-rail storage scheme mediated by an intense control field to allow storage and retrieval of any arbitrary polarization state. Upon retrieval, we employ a filtering system to sufficiently remove the strong pump field, and subject retrieved light states to polarization tomography. To date, our system has produced signal-to-noise ratios near unity with a memory fidelity of >80 % using coherent state qubits containing four photons on average. Our results thus demonstrate the feasibility of room temperature systems for the storage of single-photon-level photonic qubits. Such room temperature systems will be attractive for future long distance quantum communication schemes.

Determination of butyltin species in natural waters using aqueous phase ethylation and off-line room temperature trapping

International Nuclear Information System (INIS)

Bowles, Karl C.; Apte, Simon C.; Hales, Leigh T.

2003-01-01

Monobutyltin (MBT), dibutyltin (DBT) and tributyltin (TBT) were determined in natural water samples by aqueous phase ethylation with sodium tetraethylborate (STEB), room temperature trapping of the resulting volatile derivatives on Tenax TA[reg], followed by gas chromatography-quartz furnace atomic absorption spectrometry (GC-QFAAS). Recoveries of butyltin spikes from natural water samples were 90-109% at concentrations of ∼100 ng Sn/l. The method precision at ∼100 ng Sn/l was ≤6% RSD for butyltins spiked into natural waters. The detection limits for 1 l water samples were <1 ng Sn/l for all butyltin species. Sample throughput of the method is high (greater than three samples per hour) due to the two-stage nature of the procedure, which allows derivatisation/trapping and GC-QFAAS quantitation to be performed separately. Off-line trapping is also advantageous as it extends the life of the GC column and quartz furnace to at least 12 months due to minimisation of carry-over of co-purged material

Effects of different oxyanions in solution on the precipitation of jarosite at room temperature.

Science.gov (United States)

Yeongkyoo, Kim

2018-04-09

The effects of five different oxyanions, AsO 4 , SeO 3 , SeO 4 , MoO 4 , and CrO 4 , on the precipitation of jarosite at room temperature were investigated by X-ray diffraction, scanning electron microscopy, and chemical analysis. Different amounts (2, 5, and 10 mol%) of oxyanions in the starting solution and different aging times (1 h-40 days) were used for the experiment. In the initial stage, only the amorphous phase appears for all samples. With increasing aging time, jarosite and jarosite with oxyanions start precipitating at room temperature with different precipitation rates and crystallinities. Jarosite with AsO 4 shows the lowest precipitation rate and lowest crystallinity. With increasing amounts of oxyanions, the crystallization rate decreases, especially for jarosite with AsO 4 . The jarosite samples with CrO 4 and SeO 4 show the fastest precipitation and highest crystallinities. For the jarosite samples with a low precipitation rate and low crystallinity, the amorphous phase contains high concentrations of oxyanions, probably because of the fast precipitation of the amorphous iron oxyanion phase; however, the phase with fast jarosite precipitation contains fewer oxyanions. The results show that coprecipitation of jarosite can play a more important role in controlling the behavior of CrO 4 than AsO 4 in acid mine drainage. Copyright © 2018 Elsevier B.V. All rights reserved.

Room temperature luminescence and ferromagnetism of AlN:Fe

Directory of Open Access Journals (Sweden)

H. Li

2016-06-01

Full Text Available AlN:Fe polycrystalline powders were synthesized by a modified solid state reaction (MSSR method. Powder X-ray diffraction and transmission electron microscopy results reveal the single phase nature of the doped samples. In the doped AlN samples, Fe is in Fe2+ state. Room temperature ferromagnetic behavior is observed in AlN:Fe samples. Two photoluminescence peaks located at about 592 nm (2.09 eV and 598 nm (2.07 eV are observed in AlN:Fe samples. Our results suggest that AlN:Fe is a potential material for applications in spintronics and high power laser devices.

Very large phase shift of microwave signals in a 6 nm Hf x Zr1-x O2 ferroelectric at ±3 V

Science.gov (United States)

Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Iordanescu, Sergiu; Aldrigo, Martino; Romanitan, Cosmin; Vasilache, Dan; Dinescu, Adrian; Dragoman, Daniela

2017-09-01

In this letter, we report for the first time very large phase shifts of microwaves in the 1-10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1-x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications.

Room temperature ferromagnetic and photoluminescence ...

Indian Academy of Sciences (India)

32

electrode, photo electronic devices, photo sensors, liquid crystal displays, electrochromic windows, solar panels and transparent coatings for solar-energy heat mirrors [11-13]. Here we report on magnetic properties of ITO nanoparticles at room temperature and at 100 K. 2. Experimental. The In1.9Sn0.1O3 powder samples ...

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

The manganese doped layered ceramic samples (Na1.9Li0.1)Ti3O7 : XMn(0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room ... Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light ...

Electrical and thermal properties of lead titanate glass ceramics

International Nuclear Information System (INIS)

Shankar, J.; Deshpande, V.K.

2011-01-01

Glass samples with composition of (50-X)PbO-(25+X)TiO 2 -25B 2 O 3 (where X=0, 5, 10 and 12.5 mol%) were prepared using conventional quenching technique. The glass transition temperature, T g and crystallization temperature T c were determined from the DTA. These glass samples were converted to glass ceramics by following two stage heat treatment schedule. The glass ceramic samples were characterized by XRD, SEM and dielectric constant measurements. The XRD results revealed the formation of ferroelectric lead titanate (PT) as a major crystalline phase in the glass ceramics. The density increases and the CTE decreases for all glass ceramics with increase in X (mol%). This may be attributed to increase in PT phase. The SEM results which show rounded crystallites of lead titanate, also supports other results. Hysteresis loops observed at room temperature confirms the ferroelectric nature of glass ceramics. The optimized glass ceramic sample exhibits high dielectric constant which is of technical importance. -- Research Highlights: →Lead titanate glass ceramics prepared by conventional quenching technique. →Lead titanate is a major crystalline phase in the glass ceramics. →The ferroelectric nature of glass ceramics is confirmed by the hysteresis study. →The high value of ε observed at room temperature is quite promising in the study.

Microstructure stability of silver electrodeposits at room temperature

International Nuclear Information System (INIS)

Hansen, Karsten; Pantleon, Karen

2008-01-01

In situ quantitative X-ray diffraction analysis was used to investigate the kinetics of microstructure evolution at room temperature (self-annealing) in an electrodeposited silver layer. As a function of time at room temperature the as-deposited nanocrystalline microstructure evolved considerably: orientation-dependent grain growth and changes of the preferred grain orientation occurred. It is demonstrated for the first time that self-annealing occurs for electrodeposited silver layers and, hence, is not a unique feature of copper as often suggested