Rock avalanche and rock glacier: A compound landform study from Hornsund, Svalbard

Czech Academy of Sciences Publication Activity Database

Hartvich, Filip; Blahůt, Jan; Stemberk, Josef

2017-01-01

Roč. 276, JAN 1 (2017), s. 244-256 ISSN 0169-555X R&D Projects: GA MŠk(CZ) LM2015079; GA MŠk(CZ) LG15007 Institutional support: RVO:67985891 Keywords : ERT * TLS (LiDAR) * lichenometry * morphometry * rock avalanche * rock glacier * Schmidt hammer * Svalbard * Hornsund Subject RIV: DB - Geology ; Mineralogy OBOR OECD: Geology Impact factor: 2.958, year: 2016

Tidal wetland vegetation and ecotone profiles: The Rush Ranch Open Space Preserve

Science.gov (United States)

The Rush Ranch Open Space Preserve (Rush Ranch) is a component site of the San Francisco Bay National Estuarine Research Reserve (SF Bay NERR) that includes one of the largest undiked tidal wetlands in the San Francisco Estuary. The brackish tidal wetlands grade into transitional vegetation and unde...

Acorns - Spears and Didion Ranches [ds322

Data.gov (United States)

California Natural Resource Agency — These data are the characteristics and acorn counts from 2005 of individual live oak trees found in 0.05-ha circular habitat plots at Spears and Didion Ranches,...

Habitat characteristic of two selected locations for sea cucumber ranching purposes

Science.gov (United States)

Hartati, Retno; Trianto, Agus; Widianingsih

2017-02-01

Sea cucumbers face heavily overfished because of their high prices and very strong market demand. One effort suggested to overcome this problem is sea ranching. The objectives of present works were to determine biological, physical, and chemical characteristics of prospective location for sea ranching of sea cucumber Holothuria atra. Two location at Jepara Waters (Teluk Awur and Bandengan WateRs of Jepara Regency) were selected. The determination of chemical (salinity, temperature, dissolved oxygen of water, phosphate, nitrate, nitrite and ammonium of water and sediment, organic matters of sediment), physical (transparancy, sedimen grains size, water current direction and its velocity), biologycal characteristic (coverage of seagrass and its macroalgae associated, phytoplankton as well as chlorophyl-a and phaeopytin of water and sediment) ware determined. The result of present work showed that some characteristic were matched with requirement as sea ranching location of sea cucumber because the density of sea cucumber in the sea is a function of habitat features. For sediment feeding holothurians of the family Aspidochirotida, the biologycal characteristic act as very important considerations by providing sea cucumber food. High cholophyl-a and phaeopytin in sediment also represent a prosperous habitat for sea cucumber ranching.

The South African wildlife ranching sector: A Social Accounting Matrix Leontief multiplier analysis

Directory of Open Access Journals (Sweden)

Philippus C. Cloete

2014-10-01

Research purpose: The purpose of this article is to put into context the relative economic contribution of the wildlife ranching sector, as opposed to other land-use options in South Africa. Motivation for the study: Growth in the wildlife ranching sector at the cost of other traditional farming practices resulted in disagreements amongst various role players about the impact thereof on the national economy. The controversy can most probably be explained by different beliefs, coupled with the lack of a proper understanding and quantification of the wildlife ranching sector’s contribution toward the economy. Research methodology: The study employed a Social Accounting Matrix-based Leontief multiplier analysis for South Africa. Main findings: Results from the multiplier analysis revealed that developments within the wildlife ranching sector are likely to make a relatively more superior contribution towards the economy, especially when compared to similar land-use options such as extensive livestock production. Practical/managerial implications: It has been acknowledged by both academia and private sector that a major need exists for more research on the South African wildlife ranching industry, specifically looking at issues such as the industries, economic and social contributions, potentials and constraints. The research, therefore, contributes toward the depth of economic information and research regarding the South African wildlife sector. Contribution/value added: The research provides valuable information in dealing with the ‘popular belief’, especially amongst some of South Africa’s decision makers, namely, that growth in the wildlife ranching sector is not or does not have the ability to contribute significantly toward economic and socioeconomic factors.

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

International Nuclear Information System (INIS)

Zhang Wei; Xue Jun-Shuai; Zhou Xiao-Wei; Zhang Yue; Liu Zi-Yang; Zhang Jin-Cheng; Hao Yue

2012-01-01

An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 10 19 cm −3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Kansas Farm and Ranch Management Project.

Science.gov (United States)

Albracht, James, Ed.

Thirty-four units of instruction are included in this core curriculum in farm management for postsecondary farm and ranch management programs. Units of instruction are divided into twelve instructional areas: (1) Introduction to Financial Management, (2) Farm Business Arrangement, (3) Credit Management, (4) Budgeting, (5) Record Keeping, (6)…

Vegetation map and plant checklist of Ol Ari Nyiro ranch and the ...

African Journals Online (AJOL)

Ol Ari Nyiro is a 360 km2 ranch of the Laikipia Plateau, in a semi-arid part of Kenya. The vegetation of the ranch and nearby Mukutan Gorge was mapped, and a preliminary check-list of fungi and vascular plants compiled. The vegetation was classified in 16 different types. A total of 708 species and subspecies were ...

Forrest Ranch Acquisition, Annual Report 2001-2002.

Energy Technology Data Exchange (ETDEWEB)

Smith, Brent

2003-08-01

Through their John Day Basin Office, the Confederated Tribes of Warm Springs Reservation of Oregon (Tribes) acquired the Forrest Ranch during July of 2002. The property consists of two parcels located in the John Day subbasin within the Columbia basin. The mainstem parcel consists of 3,503 acres and is located 1/2 mile to the east of Prairie City, Oregon on the mainstem of the John Day River. The middle fork parcel consists of 820 acres and is located one mile to the west of the town of Austin, OR on the middle fork John Day River. The Forrest Ranch Project is under a memorandum of agreement with the Bonneville Power Administration (BPA) to provide an annual written report generally describing the real property interests of the project and management activities undertaken or in progress. The Forrest Ranch acquisition was funded by BPA as part of their program to protect, mitigate, and enhance fish and wildlife habitat affected by the operation of their hydroelectric facilities on the Columbia River and its tributaries. Following lengthy negotiations with the BPA and property owner, the Tribes were able to conclude the acquisition of the Forrest Ranch in July of 2002. The intent of the acquisition project was to partially mitigate fish and wildlife impacts for the John Day Dam on the Columbia River as outlined in the Northwest Power Planning Council's Wildlife Program (NPPC 1994, section 11.1, section 7.6). While the Tribes hold fee-title to the property, the BPA has assured a level of program funding through a memorandum of agreement and annual statement of work. As early as 1997, the Tribes identified this property as a priority for restoration in the John Day basin. In 2000, the Tribes arranged an agreement with the landowner to seek funds for the acquisition of both the Middle Fork and upper Mainstem John Day River holdings of Mr. John Forrest. This property had been a priority of not only the Tribes, but of many other basin natural resource agencies. The

76 FR 77890 - Swan Ranch Railroad, L.L.C.-Operation Exemption-Swan Industrial Park

Science.gov (United States)

2011-12-14

... DEPARTMENT OF TRANSPORTATION Surface Transportation Board [Docket No. FD 35574] Swan Ranch Railroad, L.L.C.--Operation Exemption--Swan Industrial Park Swan Ranch Railroad, L.L.C. (SRR),\\1\\ a noncarrier, has filed a verified notice of exemption under 49 CFR 1150.31 to operate, pursuant to an agreement with Cheyenne Logistics Hub, LLC (CLH), all...

Acoustic Conditioning System Development and Conditioning Experiments on Black Seabreams in the Xiangshan Bay Sea Ranch

Science.gov (United States)

Hu, Qingsong; Rahman, Hafiz Abd ur; Jiang, Yazhou; Zhang, Shouyu; Shentu, Jikang

2018-06-01

Attracting released hatchery-reared fish to designated areas during the growth process is vital to realize the objectives of sea ranching. Based on the bottom artificial reefs and surface kelp culture facilities in the Xiangshan Bay sea ranch, we proposed systematic techniques related to acoustic conditioning of the black seabream ( Sparus macrocephalus). Experiments conducted in 12 m × 10 m × 1.6 m ponds on Xixuan Island showed that black seabream was positively sensitive to 500-600 Hz periodic signals. Conditioned responses were apparent after 8 d. Two to three days were required for recovery of the memory of a conditioned response after a 20-day interval. According to the practical application requirements in the open sea, unattended acoustic conditioning equipment was developed. The ranching equipment was used in 12 m × 12 m × 2.5 m cages, and the behavior of black seabream juveniles was successfully guided after 7 days. Of the 16000 released fish, 82.5% of them were conditioned with a flexible grading net. To avoid inducing a stress response, the juveniles were released into the sea ranch in situ from the net cage. The acoustic conditioning equipments were moved into the open sea and the aggregation phenomenon of the released fish was observed when the sound was played. After 6 months of investigation and based on Sr+ marking, only one acoustically conditioned fish was found outside the 3.5-km2 sea ranch area, thereby reached the goal of guiding activity. The practical effect in the Xiangshan Bay sea ranch showed the validity of the acoustic conditioning system, which may contribute to improve the operation of the sea ranches in the East China Sea.

Caldwell Ranch Exploration and Confirmation Project, Northwest Geysers, CA

Energy Technology Data Exchange (ETDEWEB)

Walters, Mark A.

2013-04-25

The purpose of the Caldwell Ranch Exploration and Confirmation Project was to drill, test, and confirm the present economic viability of the undeveloped geothermal reservoir in the 870 acre Caldwell Ranch area of the Northwest Geysers that included the CCPA No.1 steam field. All of the drilling, logging, and sampling challenges were met. Three abandoned wells, Prati 5, Prati 14 and Prati 38 were re-opened and recompleted to nominal depths of 10,000 feet in 2010. Two of the wells required sidetracking. The flow tests indicated Prati 5 Sidetrack 1 (P-5 St1), Prati 14 (P-14) and Prati 38 Sidetrack 2 (P-38 St2) were collectively capable of initially producing an equivalent of 12 megawatts (MWe) of steam using a conversion rate of 19,000 pounds of steam/hour

Herp Coverboard Sampling - Spears and Didion Ranches [ds324

Data.gov (United States)

California Natural Resource Agency — These data are detections of reptiles in 2006 under 2 ft x 2 ft dimension plywood coverboards at four of the 15 sample points at Spears and Didion Ranches, Placer...

77 FR 4290 - Conway Ranch Hydropower Project; Notice of Preliminary Permit Application Accepted for Filing and...

Science.gov (United States)

2012-01-27

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13089-002] Conway Ranch Hydropower Project; Notice of Preliminary Permit Application Accepted for Filing and Soliciting Comments... study the feasibility of the Conway Ranch Hydropower Project to be located on Virginia Creek, near the...

Book Review: Game Ranch Management (Sixth Edition) | Peel ...

African Journals Online (AJOL)

Book Title: Game Ranch Management (Sixth Edition). Book Authors: J du P Bothma & J.G. du Toit (Eds.) 2016, Van Schaik Publishers, PO Box 12681, Hatfield 0028, Pretoria, South Africa 1012 pages, hardcover, eBook and ePub. ISBN: 9780627033469, 9780627033476 (eBook), 9780627034909 (ePub). Price R949.00 ...

Agent Orange Exposure and Monoclonal Gammopathy of Undetermined Significance: An Operation Ranch Hand Veteran Cohort Study.

Science.gov (United States)

Landgren, Ola; Shim, Youn K; Michalek, Joel; Costello, Rene; Burton, Debra; Ketchum, Norma; Calvo, Katherine R; Caporaso, Neil; Raveche, Elizabeth; Middleton, Dan; Marti, Gerald; Vogt, Robert F

2015-11-01

Multiple myeloma has been classified as exhibiting "limited or suggestive evidence" of an association with exposure to herbicides in Vietnam War veterans. Occupational studies have shown that other pesticides (ie, insecticides, herbicides, fungicides) are associated with excess risk of multiple myeloma and its precursor state, monoclonal gammopathy of undetermined significance (MGUS); however, to our knowledge, no studies have uncovered such an association in Vietnam War veterans. To examine the relationship between MGUS and exposure to Agent Orange, including its contaminant 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD), in Vietnam War veterans. This was a prospective cohort study conducted in 2013 to 2014, testing for MGUS in serum specimens collected and stored in 2002 by the Air Force Health Study (AFHS). The relevant exposure data collected by the AFHS was also used. We tested all specimens in 2013 without knowledge of the exposure status. The AFHS included former US Air Force personnel who participated in Operation Ranch Hand (Ranch Hand veterans) and other US Air Force personnel who had similar duties in Southeast Asia during the same time period (1962 to 1971) but were not involved in herbicide spray missions (comparison veterans). Agent Orange was used by the US Air Force personnel who conducted aerial spray missions of herbicides (Operation Ranch Hand) in Vietnam from 1962 to 1971. We included 479 Ranch Hand veterans and 479 comparison veterans who participated in the 2002 follow-up examination of AFHS. Agent Orange and TCDD. Serum TCDD levels were measured in 1987, 1992, 1997, and 2002. Risk of MGUS measured by prevalence, odds ratios (ORs), and 95% CIs. The 479 Ranch Hand veterans and 479 comparison veterans had similar demographic and lifestyle characteristics and medical histories. The crude prevalence of overall MGUS was 7.1% (34 of 479) in Ranch Hand veterans and 3.1% (15 of 479) in comparison veterans. This translated into a 2.4-fold increased risk

Ranch profitability given increased precipitation variability and flexible stocking

Science.gov (United States)

Forage and cattle performance relationships with spring precipitation, combined with cattle market price variability, were incorporated into a ranch level model to determine if addition of a yearling enterprise to the base cow-calf herd would improve profitability with increasing (25% and 50% greate...

Richness of mammals on the San Bernardino Ranch in the municipality of Agua Prieta, Sonora, Mexico

Science.gov (United States)

Mario Erandi Bonillas-Monge; Carlos Manuel Valdez-Coronel

2013-01-01

Historically, the San Bernardino Ranch has performed, as economical activities, livestock and farming, which has contributed to the deterioration of regional ecosystems. The ranch is ecologically important due to the diverse types of habitats of conservation interest such as the semi-desert grassland, the riparian vegetation, and a large ciénega, in which restoration...

78 FR 41795 - Farm, Ranch, and Rural Communities Committee Teleconference

Science.gov (United States)

2013-07-11

... Communities Committee Teleconference AGENCY: Environmental Protection Agency (EPA). ACTION: Notice of Public..., EPA gives notice of a teleconference meeting of the Farm, Ranch, and Rural Communities Committee (FRRCC). The FRRCC is a policy-oriented committee that provides policy advice, information, and...

Forrest Ranch Management and Implementation, Annual Report 2002-2003.

Energy Technology Data Exchange (ETDEWEB)

Smith, Brent

2004-01-01

Through their John Day Basin Office, the Confederated Tribes of Warm Springs Reservation of Oregon (Tribes) acquired the Forrest Ranch during July of 2002. The property consists of two parcels located in the John Day subbasin within the Columbia basin. The mainstem parcel consists of 3,503 acres and is located 1/2 mile to the east of Prairie City, Oregon on the mainstem of the John Day River. The middle fork parcel consists of 820 acres and is located one mile to the west of the town of Austin, OR on the middle fork John Day River. The Forrest Ranch Project is under a memorandum of agreement with the Bonneville Power Administration (BPA) to provide an annual written report generally describing the real property interests of the project and management activities undertaken or in progress. The Forrest Ranch acquisition was funded by BPA as part of their program to protect, mitigate, and enhance fish and wildlife habitat affected by the operation of their hydroelectric facilities on the Columbia River and its tributaries. Following lengthy negotiations with the BPA and property owner, the Tribes were able to conclude the acquisition of the Forrest Ranch in July of 2002. The intent of the acquisition project was to partially mitigate fish and wildlife impacts for the John Day Dam on the Columbia River as outlined in the Northwest Power Planning Council's Wildlife Program (NPPC 1994, section 11.1, section 7.6). While the Tribes hold fee-title to the property, the BPA has assured a level of program funding through a memorandum of agreement and annual statement of work. As early as 1997, the Tribes identified this property as a priority for restoration in the John Day basin. In 2000, the Tribes arranged an agreement with the landowner to seek funds for the acquisition of both the Middle Fork and upper Mainstem John Day River holdings of Mr. John Forrest. This property had been a priority of not only the Tribes, but of many other basin natural resource agencies. The

77 FR 70428 - Bar None Ranch LLC; Notice of Declaration of Intention and Soliciting Comments, Protests, and/or...

Science.gov (United States)

2012-11-26

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. DI13-2-000] Bar None Ranch LLC; Notice of Declaration of Intention and Soliciting Comments, Protests, and/or Motions To Intervene...: November 2, 2012. d. Applicant: Bar None Ranch LLC. e. Name of Project: Snodgrass Springs Micro Hydro...

LOTT RANCH 3D PROJECT

International Nuclear Information System (INIS)

Larry Lawrence; Bruce Miller

2004-01-01

The Lott Ranch 3D seismic prospect located in Garza County, Texas is a project initiated in September of 1991 by the J.M. Huber Corp., a petroleum exploration and production company. By today's standards the 126 square mile project does not seem monumental, however at the time it was conceived it was the most intensive land 3D project ever attempted. Acquisition began in September of 1991 utilizing GEO-SEISMIC, INC., a seismic data contractor. The field parameters were selected by J.M. Huber, and were of a radical design. The recording instruments used were GeoCor IV amplifiers designed by Geosystems Inc., which record the data in signed bit format. It would not have been practical, if not impossible, to have processed the entire raw volume with the tools available at that time. The end result was a dataset that was thought to have little utility due to difficulties in processing the field data. In 1997, Yates Energy Corp. located in Roswell, New Mexico, formed a partnership to further develop the project. Through discussions and meetings with Pinnacle Seismic, it was determined that the original Lott Ranch 3D volume could be vastly improved upon reprocessing. Pinnacle Seismic had shown the viability of improving field-summed signed bit data on smaller 2D and 3D projects. Yates contracted Pinnacle Seismic Ltd. to perform the reprocessing. This project was initiated with high resolution being a priority. Much of the potential resolution was lost through the initial summing of the field data. Modern computers that are now being utilized have tremendous speed and storage capacities that were cost prohibitive when this data was initially processed. Software updates and capabilities offer a variety of quality control and statics resolution, which are pertinent to the Lott Ranch project. The reprocessing effort was very successful. The resulting processed data-set was then interpreted using modern PC-based interpretation and mapping software. Production data, log data

Productivity of Indigenous and Exotic Cattle on Kenya Ranches ...

African Journals Online (AJOL)

A comparison of productivity and adaptability of indigenous (Boran and Small East African Zebu) and the exotic (Sahiwal and Ayrshire) cattle on Kenyan ranches located in semi-arid areas of the Rift Valley Provinces was done. Data sets of the cattle breeds over the 1979-1993 period on Deloraine, Elkarama, Ilkerin, ...

A Critique of the Green Economy: Approach in the Wildlife Ranching ...

African Journals Online (AJOL)

AFRICAN JOURNALS ONLINE (AJOL) · Journals · Advanced Search ... wildlife ranching in South Africa are socially constructed through language. Discourses of game farmers' identity and practice illustrate that they use language as a critical ...

76 FR 45602 - Proposed Safe Harbor Agreement for California Red-Legged Frog, at Swallow Creek Ranch, San Luis...

Science.gov (United States)

2011-07-29

... DEPARTMENT OF THE INTERIOR Fish and Wildlife Service [FWS-R8-ES-2011-N144; 81440-1113-0000-F3] Proposed Safe Harbor Agreement for California Red-Legged Frog, at Swallow Creek Ranch, San Luis Obispo... Ranch in San Luis Obispo County, California. Within the 620 acres of land comprising the Enrolled...

Optical and structural characterization of GaN thin films at different N to Ga flux ratios

International Nuclear Information System (INIS)

El-Naggar, Ahmed M.

2011-01-01

GaN films were grown on Si(111) substrates under various beam equivalent pressure (BEP) ratios by plasma-assisted molecular beam epitaxy. The optical properties for the grown samples were studied over a wide spectral range from 200 to 3300 nm using the reflectance spectrum only. It was found that increasing the N/Ga BEP ratio from 17.9 to 46.1 increases the refractive index (n) from 2.05 to 2.38 at wavelength 630 nm (for example), while the optical energy gap (E g ) were found to be in the range between 3.325 to 3.35 eV with no specific trend. The structural properties for the grown films were studied through two types of rocking curve measurements; normal rocking curve (ω-scan) and triple axis rocking curve (ω/2θ-scan). It was found that with decreasing the N/Ga ratio from 46.1 to 17.9 the full width at half maximum decreases from 0.62 deg. to 0.58 deg. for ω-scan and from 0.022 deg. to 0.021 deg. for ω/2θ-scan. Thus, our results showed a clear correlation between the optical-structural parameters and the BEP ratios of N and Ga.

2006 Southwest Florida Water Management District (SWFWMD) Lidar: Rutland Ranch District

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The Light Detection and Ranging (LiDAR) LAS dataset is a survey of select areas within Rutland Ranch. This data falls in Manatee County. These data were produced for...

77 FR 71396 - Council for Native American Farming and Ranching

Science.gov (United States)

2012-11-30

... American Farming and Ranching (CNAFR) a public advisory committee of the Office of Tribal Relations (OTR... documents other than rules #0;or proposed rules that are applicable to the public. Notices of hearings #0..., filing of petitions and applications and agency #0;statements of organization and functions are examples...

Final environmental statement related to the United Nuclear Corporation, Morton Ranch, Wyoming Uranium Mill (Converse County, Wyoming)

Energy Technology Data Exchange (ETDEWEB)

1979-02-01

Impacts from Morton Ranch Uranium Mill will result in: alterations of up to 270 acres occupied by the mill facilities; increase in the existing background radiation levels; socioeconomic effects on Glenrock and Douglas, Wyoming. Solid waste material (tailings solids) from the mill will be deposited onsite in exhausted surface mine pits. Any license issued for the Morton Ranch mill will be subject to conditions for the protection of the environment.

Final environmental statement related to the United Nuclear Corporation, Morton Ranch, Wyoming Uranium Mill (Converse County, Wyoming)

International Nuclear Information System (INIS)

1979-02-01

Impacts from Morton Ranch Uranium Mill will result in: alterations of up to 270 acres occupied by the mill facilities; increase in the existing background radiation levels; socioeconomic effects on Glenrock and Douglas, Wyoming. Solid waste material (tailings solids) from the mill will be deposited onsite in exhausted surface mine pits. Any license issued for the Morton Ranch mill will be subject to conditions for the protection of the environment

77 FR 60981 - TGP Granada, LLC and Roosevelt Wind Ranch, LLC v. Public Service Company of New Mexico, Tortoise...

Science.gov (United States)

2012-10-05

...; EL12-43-000, EL12-43-001 TGP Granada, LLC and Roosevelt Wind Ranch, LLC v. Public Service Company of New Mexico, Tortoise Capital Resources Corp.; TGP Granada, LLC and Roosevelt Wind Ranch, LLC; Notice... over capacity on the Eastern Interconnection Project. \\1\\ TGP Granada, LLC v. Pub. Serv. Co. of New...

Avian response to pine restoration at Peck Ranch Conservation Area

Science.gov (United States)

Richard Clawson; Carrie Steen; Kim Houf; Terry Thompson

2007-01-01

Midco Pine Flats is a 2,223-acre region of Peck Ranch Conservation Area (CA) that is classified as a pine-oak plains land type association. Extensive logging in the early 1900s removed most overstory shortleaf pine allowing oak to become the primary overstory component. In 2000, Missouri Department of Conservation staff initiated a pineoak woodland restoration project...

Cultural Resource Survey Report. Hildebrand Ranch Area: Proposed Chatfield Arboretum.

Science.gov (United States)

1981-05-01

stabilization and attic re- pair General Purpose Shed X X Chicken Coop X X Carriage Shed X x Corrals and Fences X X Grape Arbor x Inventory of Buildings and Fact...area of about 350 acres and included the en- tire ranch except for the areas of ground occupied by buildings and parking lots. The area along Deer

Improving water quality for human and livestock consumption on cattle ranches in Lincoln and Socorro Counties New Mexico

Energy Technology Data Exchange (ETDEWEB)

Teich-McGoldrick, Stephanie [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ilgen, Anastasia Gennadyevna [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Dwyer, Brian P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Rigali, Mark J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stewart, Thomas Austin [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-12-01

This report summarizes the assistance provided to Shafer Ranches, Inc., Hightower Ranch, and Western Environmental by Sandia National Laboratories under a Leveraged New Mexico Small Business Assistance grant. The work was conducted between April to November, 2014. Therefore, Sandia National Laboratories has been asked to investigate and develop a water treatment system that would result in reduced cost associated with infrastructure, maintenance, elimination of importing water, and improved cattle health.

Passive solar ranch house for the mass market

Energy Technology Data Exchange (ETDEWEB)

Albanes, M.N.

1981-01-01

To promote the building of passive solar housing in the Denver metropolitan area, a solar ranch style house was designed for a builder, Unique Homes, as part of a group of thirteen passive solar houses built for the mass market under SERI's Denver Metro Home Builders Program. The project, process of design, thermal performance analysis, cost and consumer/media response are reviewed. The final design was a direct gain, attached greenhouse system that used brick as interior mass.

m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

International Nuclear Information System (INIS)

Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

2007-01-01

A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

Green electricity in abundance. A photovoltaic roof lends a ranch in the style of the 50s a contemporary note; Gruenstrom im Ueberfluss. Ein Photovoltaikdach verleiht einer Ranch im Stil der 50er-Jahre einen zeitgenoessischen Akzent

Energy Technology Data Exchange (ETDEWEB)

Hirsch, Matthew; Krause, Matthias B.

2013-03-15

Landlady Kate Kennedy wanted to build her property in a conservation area three hours' drive south of San Francisco in a ranch-style house. Architect Jonathan Feldman added energy-efficient elements and a roof-integrated photovoltaic system to the project. Kennedy now produces more electricity than it can consume. [German] Hausherrin Kate Kennedy wollte ihr Anwesen in einem Naturschutzgebiet drei Autostunden suedlich von San Francisco unbedingt im Stil eines Ranch-Hauses bauen. Architekt Jonathan Feldman fuegte dem Projekt energieeffiziente Elemente und eine dachintegrierte Photovoltaikanlage hinzu. Nun produziert Kennedy mehr Solarstrom, als sie verbrauchen kann.

Long-term surveillance plan for the Collins Ranch Disposal Site, Lakeview, Oregon

International Nuclear Information System (INIS)

1993-12-01

This long-term surveillance plan (LTSP) for the Lakeview, Oregon, Uranium Mill Tailings Remedial Action (UMTRA) Project disposal site describes the surveillance activities for the Lakeview (Collins Ranch) disposal cell, which will be referred to as the Collins Ranch disposal cell throughout this document. The US Department of Energy (DOE) will carry out these activities to ensure that the disposal cell continues to function as designed. This final LTSP was prepared as a requirement for acceptance under the US Nuclear Regulatory Commission (NRC) general license for custody and long-term care of residual radioactive materials. This LTSP documents whether the land and interests are owned by the United States or an Indian tribe, and details how the long-term care of the disposal site will be carried out. It is based on the DOE's Guidance for Implementing the UMTRA Project Long-term Surveillance Program (DOE, 1992a)

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

International Nuclear Information System (INIS)

Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

2009-01-01

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

Pine Creek Ranch, FY 2001 Annual Report.

Energy Technology Data Exchange (ETDEWEB)

Berry, Mark E.

2001-11-01

Pine Creek Ranch was purchased in 1999 by the Confederated Tribes of Warm Springs using Bonneville Power Administration Fish and Wildlife Habitat Mitigation funds. The 25,000 acre property will be managed in perpetuity for the benefit of fish and wildlife habitat. Major issues include: (1) Restoring quality spawning and rearing habitat for stealhead. Streams are incised and fish passage barriers exist from culverts and possibly beaver dams. In addition to stealhead habitat, the Tribes are interested in overall riparian recovery in the John Day River system for wildlife habitat, watershed values and other values such as recreation. (2) Future grazing for specific management purposes. Past grazing practices undoubtedly contributed to current unacceptable conditions. The main stem of Pine Creek has already been enrolled in the CREP program administered by the USDA, Natural Resource Conservation Service in part because of the cost-share for vegetation restoration in a buffer portion of old fields and in part because of rental fees that will help the Tribes to pay the property taxes. Grazing is not allowed in the riparian buffer for the term of the contract. (3) Noxious weeds are a major concern. (4) Encroachment by western juniper throughout the watershed is a potential concern for the hydrology of the creek. Mark Berry, Habitat Manager, for the Pine Creek Ranch requested the Team to address the following objectives: (1) Introduce some of the field staff and others to Proper Functioning Condition (PFC) assessments and concepts. (2) Do a PFC assessment on approximately 10 miles of Pine Creek. (3) Offer management recommendations. (4) Provide guidelines for monitoring.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

Detrital Zircon Geochronology of Sedimentary Rocks of the 3.6 - 3.2 Ga Barberton Greenstone Belt: No Evidence for Older Continental Crust

Science.gov (United States)

Drabon, N.; Lowe, D. R.; Byerly, G. R.; Harrington, J.

2017-12-01

The crustal setting of early Archean greenstone belts and whether they formed on or associated with blocks of older continental crust or in more oceanic settings remains a major issue in Archean geology. We report detrital zircon U-Pb age data from sandstones of the 3.26-3.20 Ga Fig Tree and Moodies Groups and from 3.47 to 3.23 Ga meteorite impact-related deposits in the 3.55-3.20 Ga Barberton greenstone belt (BGB), South Africa. The provenance signatures of these sediments are characterized by zircon age peaks at 3.54, 3.46, 3.40, 3.30, and 3.25 Ga. These clusters are coincident either with the ages of major episodes of felsic to intermediate igneous activity within and around the belt or with the ages of thin felsic tuffs reflecting distant volcanic activity. Only 15 of the reported 3410 grains (old zircons could represent felsic rocks in older, unexposed parts of the BGB sequence, but are too few to provide evidence for a continental source. This finding offers further evidence that the large, thick, high-standing, highly evolved blocks of continental crust with an andesitic bulk composition that characterize the Earth during younger geologic times were scarce in the early Archean.

Bird list of San Bernardino Ranch in Agua Prieta, Sonora, Mexico

Science.gov (United States)

Melinda Cardenas-Garcia; Monica C. Olguin-Villa

2013-01-01

Interest and investigation of birds has been increasing over the last decades due to the loss of their habitats, and declination and fragmentation of their populations. San Bernardino Ranch is located in the desert grassland region of northeastern Sonora, México. Over the last decade, restoration efforts have tried to address the effects of long deteriorating economic...

Coiled-tubing fracturing of coal seams on the Vermejo Park Ranch

Energy Technology Data Exchange (ETDEWEB)

Bybee, K.

2003-06-01

Coiled-tubing (CT) fracturing currently is used to stimulate the Vermejo and Raton coal seams on the Vermejo Park Ranch in northern New Mexico. The CT fracturing process increased the number of stimulation stages from 4 to 18 per well. CT fracturing results in more accurate proppant placement and more effective stimulation of the producing zones.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Farm Management Basic Core Curriculum. Kansas Postsecondary Farm and Ranch Management Project.

Science.gov (United States)

Albracht, James, Ed.

Thirty-five units of instruction are included in this core curriculum in farm management for postsecondary farm and ranch management programs. Units of instruction are divided into 12 instructional areas: (1) Introduction to Financial Management, (2) Farm Business Arrangement, (3) Credit Management, (4) Budgeting, (5) Recordkeeping, (6) Record…

Eco-friendly porous concrete using bottom ash aggregate for marine ranch application.

Science.gov (United States)

Lee, Byung Jae; Prabhu, G Ganesh; Lee, Bong Chun; Kim, Yun Yong

2016-03-01

This article presents the test results of an investigation carried out on the reuse of coal bottom ash aggregate as a substitute material for coarse aggregate in porous concrete production for marine ranch applications. The experimental parameters were the rate of bottom ash aggregate substitution (30%, 50% and 100%) and the target void ratio (15%, 20% and 25%). The cement-coated granular fertiliser was substituted into a bottom ash aggregate concrete mixture to improve marine ranch applications. The results of leaching tests revealed that the bottom ash aggregate has only a negligible amount of the ten deleterious substances specified in the Ministry of Environment - Enforcement Regulation of the Waste Management Act of Republic Korea. The large amount of bubbles/air gaps in the bottom ash aggregate increased the voids of the concrete mixtures in all target void ratios, and decreased the compressive strength of the porous concrete mixture; however, the mixture substituted with 30% and 10% of bottom ash aggregate and granular fertiliser, respectively, showed an equal strength to the control mixture. The sea water resistibility of the bottom ash aggregate substituted mixture was relatively equal to that of the control mixture, and also showed a great deal of improvement in the degree of marine organism adhesion compared with the control mixture. No fatality of fish was observed in the fish toxicity test, which suggested that bottom ash aggregate was a harmless material and that the combination of bottom ash aggregate and granular fertiliser with substitution rates of 30% and 10%, respectively, can be effectively used in porous concrete production for marine ranch application. © The Author(s) 2015.

Juvenile helium in ancient rocks: II. U-He,K-Ar, Sm-Nd, and Rb-Sr systematics in the Monche Pluton. 3He/4He ratios frozen in uranium-free ultramafic rocks

International Nuclear Information System (INIS)

Tolstikhin, I.N.; Dokuchaeva, V.S.; Kamensky, I.L.; Amelin, Yu.V.

1992-01-01

The important geodynamic parameter, the 3 He/ 4 He ratio in rocks and fluids of the continental crust, is generally decreasing from the mantle values (≅ 10 -5 ) to the radiogenic ratio (≅ 10 -8 ) on the time scale of about 1 Ga or less. However, the ratios, observed in some ancient rocks and minerals, are much higher than the radiogenic value due to a preferential retention of trapped He, when compared with radiogenic helium and/or a low U/ 3 He ratio in a sample. The distribution of He, Ar, Nd, and Sr isotopes, K, Rb, Sm, and U in ultrabasic rocks, in rock-forming minerals, in ores from the 2.49 Ga Monche Pluton, and in basic rocks of the Main Range (the Kola Peninsula) enables one to distinguish sources of the rocks and trapped fluids and outline some peculiarities of petrogenetic and fluid processes. The initial values of var-epsilon Nd (T) = -0.9 ± 0.5 , 87 Sr/ 86 Sr(T) = 0.7021 ± 0.0002, for the 2.49 Ga Monche Pluton are rather similar to these for other layered intrusions of the Baltic Shield. They differ considerably from the model values for the depleted 2.5 Ga old mantle. The observed and rather different sources of 3 He and 4 He as well as the considerable constancy of their ratio in different minerals, separated from both the ultramafic rocks and gabbros, implies: (1) an intensive process of mixing between mantle and crustal components: a melt convection in the chamber may have occurred; (2) the two types of rocks could originate by crystallization differentiation of one and the same melt. Practically all 3 He and 4 He are concentrated in secondary amphiboles; hence the fluid which stimulated the metamorphic process was probably released from the ultramafite-bearing melt

Characterizing gas permeability and pore properties of Czech granitic rocks

Czech Academy of Sciences Publication Activity Database

Konečný, Pavel; Kožušníková, Alena

2016-01-01

Roč. 13, č. 4 (2016), s. 331-338 ISSN 1214-9705 R&D Projects: GA ČR GA105/09/0089; GA MŠk(CZ) LO1406; GA MŠk ED2.1.00/03.0082 Institutional support: RVO:68145535 Keywords : granitic rocks * permeability * pore properties Subject RIV: DB - Geology ; Mineralogy Impact factor: 0.699, year: 2016 https://www.irsm.cas.cz/materialy/acta_content/2016_doi/Konecny_AGG_2016_0015.pdf

Alteration of submarine volcanic rocks in oxygenated Archean oceans

Science.gov (United States)

Ohmoto, H.; Bevacqua, D.; Watanabe, Y.

2009-12-01

Most submarine volcanic rocks, including basalts in diverging plate boundaries and andesites/dacites in converging plate boundaries, have been altered by low-temperature seawater and/or hydrothermal fluids (up to ~400°C) under deep oceans; the hydrothermal fluids evolved from shallow/deep circulations of seawater through the underlying hot igneous rocks. Volcanogenic massive sulfide deposits (VMSDs) and banded iron formations (BIFs) were formed by mixing of submarine hydrothermal fluids with local seawater. Therefore, the behaviors of various elements, especially of redox-sensitive elements, in altered submarine volcanic rocks, VMSDs and BIFs can be used to decipher the chemical evolution of the oceans and atmosphere. We have investigated the mineralogy and geochemistry of >500 samples of basalts from a 260m-long drill core section of Hole #1 of the Archean Biosphere Drilling Project (ABDP #1) in the Pilbara Craton, Western Australia. The core section is comprised of ~160 m thick Marble Bar Chert/Jasper Unit (3.46 Ga) and underlying, inter-bedded, and overlying submarine basalts. Losses/gains of 65 elements were quantitatively evaluated on the basis of their concentration ratios against the least mobile elements (Ti, Zr and Nb). We have recognized that mineralogical and geochemical characteristics of many of these samples are essentially the same as those of hydrothermally-altered modern submarine basalts and also those of altered volcanic rocks that underlie Phanerozoic VMSDs. The similarities include, but are not restricted to: (1) the alteration mineralogy (chlorite ± sericite ± pyrophyllite ± carbonates ± hematite ± pyrite ± rutile); (2) the characteristics of whole-rock δ18O and δ34S values; (3) the ranges of depletion and enrichment of Si, Al, Mg, Ca, K, Na, Fe, Mn, and P; (4) the enrichment of Ba (as sulfate); (5) the increases in Fe3+/Fe2+ ratios; (6) the enrichment of U; (7) the depletion of Cr; and (8) the negative Ce anomalies. Literature data

Feasibility Study for Paragon - Bisti Solar Ranch

Energy Technology Data Exchange (ETDEWEB)

Benally, Thomas [Navajo Hopi Land Commission Office (NHLCO), Window Rock, AZ (United States)

2015-06-01

The Navajo Hopi Land Commission Office (NHLCO) and Navajo Nation (NN) plan to develop renewable energy (RE) projects on the Paragon-Bisti Ranch (PBR) lands, set aside under the Navajo Hopi Land Settlement Act (NHLSA) for the benefit of Relocatees. This feasibility study (FS), which was funded under a grant from DOE’s Tribal Energy Program (TEP), was prepared in order to explore the development of the 22,000-acre PBR in northwestern New Mexico for solar energy facilities. Topics covered include: • Site Selection • Analysis of RE, and a Preliminary Design • Transmission, Interconnection Concerns and Export Markets • Financial and Economic Analysis • Environmental Study • Socioeconomic and Cultural Factors • Next Steps.

3.3 Ga SHRIMP U-Pb zircon age of a felsic metavolcanic rock from the Mundo Novo greenstone belt in the São Francisco craton, Bahia (NE Brazil)

Science.gov (United States)

Peucat, J. J.; Mascarenhas, J. F.; Barbosa, J. S. F.; de Souza, S. L.; Marinho, M. M.; Fanning, C. M.; Leite, C. M. M.

2002-07-01

Felsic metavolcanics associated with supracrustal rocks provide U-Pb zircon and Sm-Nd TDM ages of approximately 3.3 Ga, which establish an Archean age of the Mundo Novo greenstone belt. A granodioritic gneiss from the Mairi complex, located on the eastern boundary of the Mundo Novo greenstone belt, exhibits a zircon evaporation minimum age of 3.04 Ga and a Nd model age of 3.2 Ga. These results constrain the occurrence of at least three major geological units in this area: the Archean Mundo Novo greenstone belt, the Archean Mairi gneisses, and the adjoining Paleoproterozoic (<2.1 Ga) Jacobina sedimentary basin. The Jacobina basin follows the same trend as the Archean structure, extending southward to the Contendas-Mirante belt, in which a similar Archean-Paleoproterozoic association appears. We postulate that during the Paleoproterozoic in the eastern margin of the Gavião block, these Archean greenstone belts constituted a zone of weakness along which a late-stage orogenic sedimentary basin developed.

Pine Creek Ranch, FY 2001 annual report; ANNUAL

International Nuclear Information System (INIS)

Berry, Mark E.

2001-01-01

Pine Creek Ranch was purchased in 1999 by the Confederated Tribes of Warm Springs using Bonneville Power Administration Fish and Wildlife Habitat Mitigation funds. The 25,000 acre property will be managed in perpetuity for the benefit of fish and wildlife habitat. Major issues include: (1) Restoring quality spawning and rearing habitat for stealhead. Streams are incised and fish passage barriers exist from culverts and possibly beaver dams. In addition to stealhead habitat, the Tribes are interested in overall riparian recovery in the John Day River system for wildlife habitat, watershed values and other values such as recreation. (2) Future grazing for specific management purposes. Past grazing practices undoubtedly contributed to current unacceptable conditions. The main stem of Pine Creek has already been enrolled in the CREP program administered by the USDA, Natural Resource Conservation Service in part because of the cost-share for vegetation restoration in a buffer portion of old fields and in part because of rental fees that will help the Tribes to pay the property taxes. Grazing is not allowed in the riparian buffer for the term of the contract. (3) Noxious weeds are a major concern. (4) Encroachment by western juniper throughout the watershed is a potential concern for the hydrology of the creek. Mark Berry, Habitat Manager, for the Pine Creek Ranch requested the Team to address the following objectives: (1) Introduce some of the field staff and others to Proper Functioning Condition (PFC) assessments and concepts. (2) Do a PFC assessment on approximately 10 miles of Pine Creek. (3) Offer management recommendations. (4) Provide guidelines for monitoring

Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas

International Nuclear Information System (INIS)

Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

2015-01-01

Growth of high-quality a-plane GaN layers was performed by reaction between Ga 2 O vapor and NH 3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga 2 O partial pressure. An a-plane GaN layer with a growth rate of 48 μm/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(112-bar0) with the incident beam parallel and perpendicular to the [0001] direction were 29–43 and 29–42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga 2 O vapor and NH 3 gas at a high temperature enables the generation of high-quality crystals. (author)

The age of the rocks and the metamorphic episodes from the Southeastern of Sao Paulo state

International Nuclear Information System (INIS)

Tassinari, C.C.G.; Kawashita, K.; Schmuss, R. van; Taylor, P.N.

1988-01-01

Rb-Sr, Pb-Pb and U-Pb geochronologic studies carried out on precambrian rocks from the southeastern Sao Paulo state suggest a Complex geologic evolution during the Archean and Proterozoic times. This region is divided in five differents allochthonous terranes named Itapira-Amparo, Piracaiba-Jundiai, Sao Roque, Embu and Costeiro, separated by thrust and strike-slip faults. The Itapira-Amparo domain has a original history dating back to 3.4 Ga. and since 2.6 to 2.5 Ga. and 2.2 to 1.9 Ga. metamorphic rockformation episode occurred involving both mantle-derived magmas and recycled material. Supracrustal sequences developed around 1.4 Ga. The domain was locally reworked in 0.8 - 0.65 Ga. In the Piracaia-Jundiai the main rock-formation event occurred at 1.4 Ga., but this domian was affected by strong granization and migmatization episodes during the period 1.1 - 0.6 Ga. The third terrain is characterized by the Sao Roque metavolcanossedimentary sequence developed during the time period 1.8 - 0.7 Ga., and comprising two metamorphic superimposed events (1.4 and 0.8 - 0.7 Ga.). the post-tectonics granites ranging in ages from 0.7 to 0.55 Ga. Within the Embu terrain ages of 2.5, 1.4 and 0,75 Ga. were obtained for the metamorphic terrain, with post-tectonic activities around 650 Ma. In the Costeiro domain all the metamorphic rocks developed in late-Proterozoic time, with syntectonic phase around 650 Ma [pt

The Ash of Ohlson Ranch: A well-dated Stratigraphic Marker for Constraining Deformation Across the Northern San Andreas Fault

Science.gov (United States)

McLaughlin, R. J.; Vazquez, J. A.; Fleck, R. J.; DeLong, S.; Sarna-Wojcicki, A.; Wan, E.; Powell, C., II; Prentice, C. S.

2012-12-01

The marine to non-marine transgressional - regressional Ohlson Ranch Formation of northern California was deposited mainly east of the San Andreas Fault and the Gualala structural block during Pliocene sea level high stands. The formation transitions eastward from marine to fluvial deposits and the marine strata are deposited on a mildly warped, pholad-bored erosional surface cut near Pliocene sea level (probably above storm wave-base), on rocks of the Coastal and Central belts of the Franciscan Complex. West of the San Andreas fault near Point Arena, a right-laterally displaced remnant of the wave-cut surface occurs at ca. 100m above modern sea level. East of the fault this surface varies in elevation from ca. 200-350m and a 12-15 cm thick light gray silicic tephra, the ash of Ohlson Ranch (AOR) locally occurs ~10m above the base of the marine section. The AOR consists of very fine-grained glass shards with conspicuous brown biotite in the upper 2 cm and rare co-magmatic clinopyroxene, hornblende and euhedral, weakly zoned zircons. The zircons are relatively uniform in size and little abraded, suggesting they are primary and not re-worked. The fine-grained nature of the AOR deposit suggests it is water lain and chemical analysis of the volcanic glass indicates that the eruptive source was in the southern Cascade Range. We analyzed both polished section mounts of zircon crystals and unpolished rims by ion microprobe (SHRIMP-RG) and LA-ICPMS in order to establish a precise U-Pb age for the AOR. Ages were adjusted for initial 230Th deficiency in the U-Pb chain using Th/U measured in zircon and host glass shards. Thirty-two zircon grains measured by LA-ICPMS at the University of Arizona LaserChron Center yield a mean U-Pb age of 4.58 ± 0.30 Ma (2σ , MSWD=0.53, n=23). SHRIMP analyses of zircon interiors exposed in polished epoxy-mounts yield a mean U-Pb age of 4.36 ± 0.11 Ma (2σ, MSWD 0.72, n=19). To further refine the likely eruption age of the AOR, the SHRIMP was

Drill baby drill: An analysis of how energy development displaced ranching's dominance over the BLM's subgovernment policymaking environment

Science.gov (United States)

Forbis, Robert Earl, Jr.

Academic literature analyzing the Bureau of Land Management (BLM) land-use subgovernment stops at the Taylor Grazing Act and concludes that the historical development of administering grazing on public lands led to the capture of the BLM by ranching interests. Using a two-pronged methodological approach of process tracing and elite interviews this dissertation seeks to advance our collective knowledge of subgovernment theory by (a) clarifying the impact executive decision-making has on subgovernments and (b) identifying the conditions under which strategically competitive behavior between two competing subgovernment actors occurs. The dissertation seeks to update the literature by explaining what has caused the BLM to shift from a rancher-dominated agency to an energy dominated agency by identifying conditions under which subgovernment actors strategically respond to a political conflict. The research poses two questions: (1) how have executive actions disrupted an existing balance of power in a so-called "strong corner" of an entrenched subgovernment system and (2) what happens when conflict and competition break out between allied members of the system? Analysis indicates that as the BLM responded to Executive actions emphasizing domestic energy production, a conflict emerged between traditional allies: ranching and energy. Triggered by the unintended consequence of awakening long-dormant legislation, split-estate energy development---where property rights are severed between private surface and federal mineral estates---expanded across the West. In turn, this expansion helped establish the conditions for conflict and in doing so disrupted the balance of power between large public resource use interests in the relatively stable land-use subgovernment of the BLM. Indicative of energy's emerging dominance of the BLM's subgovernment, split-estate energy development led ranching interests to seek the protection of their Western state legislatures. This shift in

Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

International Nuclear Information System (INIS)

Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

2004-01-01

The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Trace element geochemistry of metapelitic rocks of the Medio Rio Doce, Minas Gerais region

International Nuclear Information System (INIS)

Sad, J.H.G.

1983-01-01

Representatives samples of schists and gneisses, which was metamorphosed in the sillimanite isograde, have been submited to spectrographic analyses for trace-elements. The concentrations and standart deviation (in ppm) are: Be:6,25 (3,6); Sc:29 (12); Ti:5714 (2102); V:111,5 (29); Cr:118 (78); Co:17 (11); Ni:44 (25); Cu:24 (22); Ga:30 (20); Sr:134 (70); Y:51 (21); Zr:241 (69); Nb:24 (9); Mo:4,4 (1,2); Sn:11,5 (6); Ba:601 (314); La:112 (27); Pb:54 (58). The statistic error in the determination of the average concentrations is less than 15% por Ti, V, Zr, Mo and La, between 15% and 25% for Be, Sc, Ni, Sr, Y, Nb, Sn and Ba. The error for Cr, Co and Ga is between 25% and 30%. Cu and Pb show error near 40%. The figures indicate slight variations in the original composition of the rocks, which seems to be typical of a graywacke geosinclin association. The results show a very large similarity with the world average for 'shales', in relation to Ba, Cr, Co, Nb, Ti, V, Zr. For La, Ga, Pb, Mo, Sn, Sc, Be and Y the results are quite greater, while for Cu, Ni and Sr are smaller. There is good positive correlation between Ba-La, Ba-Sr, Be-Mo, Be-Sn, Y-Nb, Ga-Sn, Ga-Ba and Ga-La. As the elements La, Ga, Mo, etc. show hight values in relation to the known concentration levels in pelitic rocks, and considering the correlation between them, we believe that a metasomatism process rock place in the region, with introduction of that elements, from intrusive granite rocks. (Author) [pt

Dynamical analysis of an optical rocking ratchet: Theory and experiment

Czech Academy of Sciences Publication Activity Database

Arzola, Alejandro V.; Volke-Sepúlveda, K.; Mateos, J.L.

2013-01-01

Roč. 87, č. 6 (2013), 062910:1-9 ISSN 1539-3755 R&D Projects: GA MŠk LH12018; GA MŠk EE2.4.31.0016 Institutional support: RVO:68081731 Keywords : deterministic optical rocking ratchet * analysis of the dynamics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.326, year: 2013

The expansion of intensive agriculture and ranching in Brazilian Amazonia

Science.gov (United States)

Walker, Robert; DeFries, Ruth; del Carmen Vera-Diaz, Maria; Shimabukuro, Yosio; Venturieri, Adriano

Agriculture in Amazonia has often provoked controversy, given the tremendous ecological value of the region's environment. First with ranching, and now with the soybean boom, tractors and cattle have marched across lands that for millennia supported only closed moist forest, resident ecosystems, and dispersed indigenous peoples. The present chapter considers this expansion, focusing on the Brazilian portion of the basin. Its premise is that effective Amazonian policy must be grounded on an understanding of the region's agriculture. The chapter pursues its objectives by first addressing the development initiatives that created the preconditions for Amazonia's current agricultural economy. The region is remote and has therefore required sustained government intervention to release its potential. The policy discussion is followed by descriptions of cattle ranching and soy farming. For each, market settings and trajectories of expansion are presented. Although these sectoral descriptions are data rich, they do not provide a conceptual framework for analyzing the environmental impacts of evolving market conditions. To accomplish this, the chapter invokes the classical land use model of von Thünen to explain Amazonian land cover dynamics in relation to soy-cattle linkages. It addresses these dynamics with remote sensing data from Mato Grosso, Pará, and Rondônia, and then discusses scenarios of agricultural advances on the forest. Conclusions follow, considering possible policy responses to deforestation, and the social context of agricultural intensification, with special attention to the issues of land tenure security and distributional equity.

Application of Ga-Al discrimination plots in identification of high strength granitic host rocks for deep geological repository of high level radioactive waste

International Nuclear Information System (INIS)

Bajpai, R.K.; Narayan, P.K.; Trivedi, R.K.; Purohit, M.K.

2010-01-01

The permanent disposal of vitrified high level wastes and in some cases even spent fuel, is being planned in specifically designed and built deep geological repository located in the depth range of 500-600m in appropriate host rock at carefully selected sites. Such facilities are expected to provide very long term isolation and confinement to the disposed waste by means of long term mechanical stability of such structures that results from very high strength and homogeneity of the chosen rock, geochemical compatible environment around the disposed waste and general lack of groundwater. In Indian geological repository development programme, granites have been selected as target host rock and large scale characterization studies have been undertaken to develop database of mineralogy, petrology, geochemistry and rock mechanical characteristics. The paper proposes a new approach for demarcation of high strength homogeneous granite rocks from within an area of about 100 square kilometres wherein a cocktail of granites of different origins with varying rock mass characteristics co exists. The study area is characterised by the presence of A, S and I type granites toughly intermixed. The S type granites are derived from sedimentary parent material and therefore carry relics of parent fabric and at times undigested material with resultant reduction in their strength and increased inhomogeneity. On the other hand I type varieties are derived from igneous parents and are more homogeneous with sufficient strength. The A type granites are emplaced as molten mass in a complete non-tectonic setting with resultant homogeneous compositions, absence of tectonic fabric and very high strength. Besides they are silica rich with less vulnerability to alterations with time. Thus A type granites are most suited for construction of Deep Geological Repository. For developing a geochemical approach for establishing relation between chemical compositions and rock strength parameters, a

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

Science.gov (United States)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Trace element analysis of silicate rocks by XRF. Pt. 2

International Nuclear Information System (INIS)

Orihashi, Yuji; Yuhara, Masaki; Kagami, Hiroo; Honma, Hiroji

1993-01-01

Quantitative X-ray fluorescence analysis of six trace elements (Ce, Ba, Ga, Co, Cr, V) in silicate rocks has been investigated, using pressed powder pellets. Ga analysis was performed using a Cr tube, whereas a Au tube was used for the remaining five elements. Corrections were made for the interference of BaKα on CeKα, FeKβ on CoKα, CrKα on VKβ and VKα on TiKβ. Mass absorption functions were estimated from background intensities at 2θ=35.5deg and that of FeKα at wavelengths longer than the iron absorption edge for a Au tube, and from the value of net intensity/background one for a Cr tube. Calibration lines were constructed using twenty-four U.S. Geological Survey and Geological Survey of Japan igneous rock reference samples. For each line, the correction coefficient is greater than 0.993 except for Ga and Ce (>0.985), indicating that the correction and calibration procedures are appropriate for accurate analysis over a wide compositional range. Analytical results for igneous, sedimentary and metamorphic reference samples (U. S. Geological Survey, Institute of Geophysical and Geochemical Exploration, South-African Bureau of Standards) accord well with recommended or proposed values, respectively. The results of this study and those of Orihashi et al. (1993) show Ce, Ba, Nb, Zr, Y, Sr, Rb, Th, Ga, Zn, Cu, Ni, Co, Cr and V in silicate rocks can be quantitatively determined by XRF at ISEI. (author)

Introduction to in situ leaching technique and facility at Smith Ranch uranium project in USA

International Nuclear Information System (INIS)

Xu Lechang; Wang Delin; Sun Xianrong; Gao Shangxiong

2005-01-01

The history of in situ leaching of uranium in USA is reviewed. Some techniques and parameters of alkaline in situ leach at Smith Ranch uranium project are introduced, including well field, sorption, elution, precipitation, filter and drying, automatic control, radiation protection, safety and environmental protection. (authors)

Biologically-initiated rock crust on sandstone: Mechanical and hydraulic properties and resistance to erosion

Czech Academy of Sciences Publication Activity Database

Slavík, M.; Bruthans, J.; Filippi, Michal; Schweigstillová, Jana; Falteisek, L.; Řihošek, J.

2017-01-01

Roč. 278, FEB 1 (2017), s. 298-313 ISSN 0169-555X R&D Projects: GA ČR GA13-28040S; GA ČR(CZ) GA16-19459S Institutional support: RVO:67985831 ; RVO:67985891 Keywords : biofilm * biocrust * biologically-initiated rock crust * sandstone protection * case hardening Subject RIV: DB - Geology ; Mineralogy; DB - Geology ; Mineralogy (USMH-B) OBOR OECD: Geology; Geology (USMH-B) Impact factor: 2.958, year: 2016

Crystal structure of HgGa{sub 2}Se{sub 4} under compression

Energy Technology Data Exchange (ETDEWEB)

Gomis, Oscar, E-mail: osgohi@fis.upv.es [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Vilaplana, Rosario [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Manjón, Francisco Javier [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Santamaría-Pérez, David [Departamento de Química Física I, Universidad Complutense de Madrid, MALTA Consolider Team, Avenida Complutense s/n, 28040 Madrid (Spain); Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); Errandonea, Daniel [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 Valencia (Spain); and others

2013-06-01

Highlights: ► Single crystals of HgGa{sub 2}Se{sub 4} with defect-chalcopyrite structure were synthesized. ► HgGa{sub 2}Se{sub 4} exhibits a phase transition to a disordered rock salt structure at 17 GPa. ► HgGa{sub 2}Se{sub 4} undergoes a phase transition below 2.1 GPa to a disordered zinc blende. - Abstract: We report on high-pressure x-ray diffraction measurements up to 17.2 GPa in mercury digallium selenide (HgGa{sub 2}Se{sub 4}). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been determined and compared to related compounds. HgGa{sub 2}Se{sub 4} exhibits a phase transition on upstroke toward a disordered rock-salt structure beyond 17 GPa, while on downstroke it undergoes a phase transition below 2.1 GPa to a phase that could be assigned to a metastable zinc-blende structure with a total cation-vacancy disorder. Thermal annealing at low- and high-pressure shows that kinetics plays an important role on pressure-driven transitions.

The Behaviour of Chromium Isotopes during the Oxidative Weathering of Ultramafic Rocks

DEFF Research Database (Denmark)

Paulukat, Cora Stefanie; Døssing, Lasse Nørbye; Mondal, Sisir K.

The chromium isotope system has been proven to be a redox-sensitve proxy in ancient and modern environmental studies (e.g. [1], [2]). In this study we investigated Cr isotope fractionation during soil formation from Archean (3.1-3.3 Ga) ultramafic rocks, intruded into metamorphic rocks of the Iron...

Archaeological survey of the McGee Ranch vicinity, Hanford Site, Washington

Energy Technology Data Exchange (ETDEWEB)

Gard, H.A.; Poet, R.M.

1992-09-01

In response to a request for a cultural resources review from Westinghouse Hanford Company for the Action Plan for Characterization of McGee Ranch Soil, Pacific Northwest Laboratory's Hanford Cultural Resources Laboratory (HCRL) conducted an archaeological survey of the McGee Ranch vicinity, located in the northwest portion of the Hanford Site. Staff members covered 8.4 km{sup 2} and recorded 42 cultural resources; 22 sites, and 20 isolated artifacts. Only 2 sites and 3 isolates were attributed to a prehistoric Native American occupation. The historic sites date from the turn of the century to the 1940s and are representative of the settlement patterns that occurred throughout the Columbia Basin. In addition to an archaeological pedestrian survey of the project area, we conducted literature and records searches and examined available aerial photographs. Records kept at HCRL were reviewed to determine if any archaeological survey had been conducted previously within the project area. Although no survey had been conducted, portions of the area adjacent to project boundaries were surveyed in 1988 and 1990. During those surveys, historic and prehistoric cultural resources were observed, increasing the possibility that similar land usage had taken place within the current project boundaries. Literature searches established a general historical sequence for this area. Aerial photographs alerted researchers to homesteads and linear features, such as roads and irrigation ditches, that might not be apparent from ground level.

Archaeological survey of the McGee Ranch vicinity, Hanford Site, Washington

Energy Technology Data Exchange (ETDEWEB)

Gard, H.A.; Poet, R.M.

1992-09-01

In response to a request for a cultural resources review from Westinghouse Hanford Company for the Action Plan for Characterization of McGee Ranch Soil, Pacific Northwest Laboratory`s Hanford Cultural Resources Laboratory (HCRL) conducted an archaeological survey of the McGee Ranch vicinity, located in the northwest portion of the Hanford Site. Staff members covered 8.4 km{sup 2} and recorded 42 cultural resources; 22 sites, and 20 isolated artifacts. Only 2 sites and 3 isolates were attributed to a prehistoric Native American occupation. The historic sites date from the turn of the century to the 1940s and are representative of the settlement patterns that occurred throughout the Columbia Basin. In addition to an archaeological pedestrian survey of the project area, we conducted literature and records searches and examined available aerial photographs. Records kept at HCRL were reviewed to determine if any archaeological survey had been conducted previously within the project area. Although no survey had been conducted, portions of the area adjacent to project boundaries were surveyed in 1988 and 1990. During those surveys, historic and prehistoric cultural resources were observed, increasing the possibility that similar land usage had taken place within the current project boundaries. Literature searches established a general historical sequence for this area. Aerial photographs alerted researchers to homesteads and linear features, such as roads and irrigation ditches, that might not be apparent from ground level.

Monitoring of Acoustic Emission During the Disintegration of Rock

Czech Academy of Sciences Publication Activity Database

Tripathi, R.; Srivastava, M.; Hloch, Sergej; Adamčík, P.; Chattopadhyaya, S.; Das, A. K.

2016-01-01

Roč. 149, č. 149 (2016), s. 481-488 E-ISSN 1877-7058. [International Conference on Manufacturing Engineering and Materials, ICMEM 2016. Nový Smokovec, 06.06.2016-10.06.2016] R&D Projects: GA MŠk ED2.1.00/03.0082; GA MŠk(CZ) LO1406 Institutional support: RVO:68145535 Keywords : acoustic emission * rock disintegration * waterjet Subject RIV: JQ - Machines ; Tools http://www.sciencedirect.com/science/article/pii/S1877705816312127

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Wake deficit measurements on the Jess and Souza Ranches, Altamont Pass

Energy Technology Data Exchange (ETDEWEB)

Nierenburg, R. (Altamont Energy Corp., San Rafael, CA (USA))

1990-04-01

This report is ninth in a series of documents presenting the findings of field test under DOE's Cooperative Field Test Program (CFTP) with the wind industry. This report provides results of a project conducted by Altamont Energy Corp. (AEC) to measure wake deficits on the Jess and Sousa Ranches in Altamont Pass, CA. This research enhances and complements other DOE-funded projects to refine estimates of wind turbine array effects. This project will help explain turbine performance variability caused by wake effects. 4 refs., 28 figs., 106 tabs.

Shortleaf pine natural community restoration on Peck Ranch Conservation Area in the Missouri Ozarks

Science.gov (United States)

John G. Tuttle; Kim J. Houf

2007-01-01

Oak decline has become a significantly increasing problem on Peck Ranch Conservation Area over the last several years. Most of the oak decline problems exist on past shortleaf pine sites. To address this issue, the area managers wrote a natural community restoration plan for 2,233 acres located on the Current-Eleven Point Oak-Pine Woodland Dissected Plain land type...

Development of a mixed seawater-hydrothermal fluid geochemical signature during alteration of volcanic rocks in the Archean (∼2.7 Ga) Abitibi Greenstone Belt, Canada

Science.gov (United States)

Brengman, Latisha A.; Fedo, Christopher M.

2018-04-01

We investigated a group of silicified volcanic rocks from the ∼2.72 Ga Hunter Mine Group (HMG), Abitibi Greenstone Belt, Canada, in order to document progressive compositional change associated with alteration in a subaqueous caldera system. Rocks of the HMG divide into three groups based on mineralogy and texture for petrographic and geochemical analyses. Volcanic features (phenocrysts, pseudomorphs after primary glass shards, lapilli, volcanic clasts) are preserved in all groups, despite changing mineralogy from primarily quartz, feldspar, chlorite (Groups 1 and 2), to quartz, hematite and carbonate (Groups 2 and 3). Compositionally, Group 1 rocks resemble volcanic rocks in the region, while Group 2 and 3 rocks show a change in mineralogy to iron, silica, and carbonate minerals, which is associated with depletion of many major and trace elements associated with volcanic rocks (Al2O3, Na2O, K2O, Zr). In addition, rare earth elements display a clear progression from volcanic signatures in Group 1 (PrSN/YbSN = 1.7-2.96, EuSN/EuSN∗ = 0.84-1.72, Y/Ho = 25.20-27.41, LaSN/LaSN∗ = 0.97-1.29, and Zr/Hf = 38.38-42.09) to transitional mixed volcanic, hydrothermal, and seawater signatures in Group 2 (PrSN/YbSN 1.33-2.89, EuSN/EuSN∗ 1.33-2.5, Y/Ho = 23.94-30, LaSN/LaSN∗ 0.93-1.34, and Zr/Hf = 40-70), to mixed hydrothermal and seawater signatures in Group 3 (PrSN/YbSN 0.62-2.88, EuSN/EuSN∗ 1.30-7.15, LaSN/LaSN∗ 1.02-1.86, Y/Ho = 25.56-55, and Zr/Hf = 35-50). We interpret that silicification of volcanic rocks (Group 1) produced transitional altered volcanic rocks (Group 2), and siliceous and jaspilitic rocks (Group 3), based on preservation of delicate volcanic features. Building on this explanation, we interpret that major, trace- and rare-earth element mobility occurred during the process of silicification, during which siliceous and jaspilitic rocks (Group 3) acquired aspects of the rare-earth element geochemical signatures of marine chemical precipitates. We

Amphibians and reptiles of C. E. Miller Ranch and the Sierra Vieja, Chihuahuan Desert, Texas, USA

Directory of Open Access Journals (Sweden)

Drew R. Davis

2018-02-01

Full Text Available We report the occurrence of 50 species of amphibians and reptiles recently collected on C. E. Miller Ranch and the Sierra Vieja in the Chihuahuan Desert of Texas, USA and describe their perceived distribution and abundance across various habitat associations of the region. Our recent surveys follow intense, historic sampling of amphibians and reptiles from this region in 1948. Of the 50 species detected in recent surveys, six were not collected in 1948 and an additional three species documented in 1948 have yet to be detected in a 14-year period of recent surveys. Combining data from both historic and recent surveys, a total of 53 species of amphibians and reptiles are known from the ranch (11 amphibians, 42 reptiles. Land stewardship and conservation practices have likely contributed to the persistence of the majority of these species through time. Additionally, we discuss the status of amphibians and reptiles not collected during recent surveys and comment on potential species that have not yet been detected.

Amphibians and reptiles of C. E. Miller Ranch and the Sierra Vieja, Chihuahuan Desert, Texas, USA.

Science.gov (United States)

Davis, Drew R; LaDuc, Travis J

2018-01-01

We report the occurrence of 50 species of amphibians and reptiles recently collected on C. E. Miller Ranch and the Sierra Vieja in the Chihuahuan Desert of Texas, USA and describe their perceived distribution and abundance across various habitat associations of the region. Our recent surveys follow intense, historic sampling of amphibians and reptiles from this region in 1948. Of the 50 species detected in recent surveys, six were not collected in 1948 and an additional three species documented in 1948 have yet to be detected in a 14-year period of recent surveys. Combining data from both historic and recent surveys, a total of 53 species of amphibians and reptiles are known from the ranch (11 amphibians, 42 reptiles). Land stewardship and conservation practices have likely contributed to the persistence of the majority of these species through time. Additionally, we discuss the status of amphibians and reptiles not collected during recent surveys and comment on potential species that have not yet been detected.

Low temperature Zn diffusion for GaSb solar cell structures fabrication

Science.gov (United States)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

The earliest Paleoproterozoic supracrustal rocks in Koillismaa, northern Finland – their petrographic and geochemical characteristics and lithostratigraphy

Directory of Open Access Journals (Sweden)

Laura S. Lauri

2003-01-01

Full Text Available The 2.44 Ga Koillismaa layered igneous complex (KLIC in northern Finland is interpreted to have formed as a consequence of early Paleoproterozoic continental rifting. Associated with the mafic layered intrusions are felsic to intermediate volcanic and plutonic rocks of approximately the same age. The supracrustal rocks on top of the KLIC have been divided into three stratigraphic groups. The lowermost of these, the Sirniö Group, is thought to predate the KLIC and thus to represent the original roof. The overlying Kynsijärvi andHautavaara Groups are somewhat younger than the layered intrusions. The Sirniö Group comprises two formations of felsic and intermediate volcanic rocks. The Sirniövaara Formation, also called as the Koillismaa granophyre, consists of a thick rhyodacitic unit withgranophyric groundmass and some breccia interlayers. The Sirniövaara rhyodacite consists of plagioclase, quartz and biotite. Minor and accessory phases include ilmenite, magnetite, apatite, titanite, zircon and fluorite. Low-grade metamorphic minerals such as chlorite, epidote, carbonate and sericite are also commonly present. The granophyric texture is considered to have formed as a consequence of contact metamorphism and hydrothermal alteration associated with the emplacement of the KLIC. Above the Sirniövaara Formation is the Unijoki Formation, a heterogeneous group of felsic to intermediate volcanic rocks. The felsic rocks of the Unijoki Formation resemble the Sirniövaara rhyodacite whereas the intermediate rocks generally contain amphibole, instead of biotite, as the predominant mafic mineral. The rocks of the Sirniö Group show A-type geochemical character, e.g., high alkali content, Fe/Mg, 10000*Ga/Al, LREE, Y and Zr. In addition to primary compositional variation, metamorphic, and possibly hydrothermal, disturbance are recorded in the Sirniö Group lithologies. We consider them to be an example of early Paleoproterozoic rift-related volcanic rocks

The crystalline basement of Estonia: rock complexes of the Palaeoproterozoic Orosirian and Statherian and Mesoproterozoic Calymmian periods, and regional correlations

Directory of Open Access Journals (Sweden)

Kirs, Juho

2009-12-01

Full Text Available New data on the Fennoscandian Shield and the Baltic area suggest a need for reinterpretation of the stratigraphy of Estonian Precambrian rock complexes. The rocks of the Tallinn Zone formed in the framework of the Fennian orogeny at the margin of the Bergslagen microcontinent 1.90–1.88 Ga ago. The precise age of the Alutaguse Zone is not known. It may have formed either during the 1.93–1.91 Ga Lapland–Savo orogeny or as a rifted eastern part of the Tallinn Zone in the Fennian orogeny. The granulites of western and southern Estonia belong to the volcanic arcs inside the 1.84–1.80 Ga Svecobaltic orogenic belt and show peak metamorphic conditions of 1.78 Ga. Small shoshonitic plutons formed 1.83–1.63 Ga, the small granitic plutons of the Wiborg Rapakivi Subprovince 1.67–1.62 Ga, and the Riga pluton 1.59–1.54 Ga ago.

Coupled Nd-142, Nd-143 and Hf-176 Isotopic Data from 3.6-3.9 Ga Rocks: New Constraints on the Timing of Early Terrestrial Chemical Reservoirs

Science.gov (United States)

Bennett, Vickie C.; Brandon, alan D.; Hiess, Joe; Nutman, Allen P.

2007-01-01

Increasingly precise data from a range of isotopic decay schemes, including now extinct parent isotopes, from samples of the Earth, Mars, Moon and meteorites are rapidly revising our views of early planetary differentiation. Recognising Nd-142 isotopic variations in terrestrial rocks (which can only arise from events occurring during the lifetime of now extinct Sm-146 [t(sub 1/2)=103 myr]) has been an on-going quest starting with Harper and Jacobsen. The significance of Nd-142 variations is that they unequivocally reflect early silicate differentiation processes operating in the first 500 myr of Earth history, the key time period between accretion and the beginning of the rock record. The recent establishment of the existence of Nd-142 variations in ancient Earth materials has opened a new range of questions including, how widespread is the evidence of early differentiation, how do Nd-142 compositions vary with time, rock type and geographic setting, and, combined with other types of isotopic and geochemical data, what can Nd-142 isotopic variations reveal about the timing and mechanisms of early terrestrial differentiation? To explore these questions we are determining high precision Nd-142, Nd-143 and Hf-176 isotopic compositions from the oldest well preserved (3.63- 3.87 Ga), rock suites from the extensive early Archean terranes of southwest Greenland and western Australia.

93 Years of stand density and land-use legacy research at the Coulter Ranch Study Site

Science.gov (United States)

Andrew J. Sanchez Meador; Margaret M. Moore

2008-01-01

In 1913, the Fort Valley Experimental Forest initiated an unprecedented case-study experiment to determine the effects of harvesting methods on tree regeneration and growth on a ponderosa pine-Gambel oak forest at Coulter Ranch in northern Arizona. The harvesting methods examined were seed-tree, group selection, and light selection. In addition, the effects of...

Geologic Map of the House Rock Valley Area, Coconino County, Northern Arizona

Science.gov (United States)

Billingsley, George H.; Priest, Susan S.

2010-01-01

This geologic map is a cooperative effort of the U.S. Geological Survey (USGS), the Bureau of Land Management, the National Park Service, and the U.S. Forest Service to provide a geologic database for resource management officials and visitor information services. This map was produced in response to information needs related to a proposed withdrawal of three segregated land areas near Grand Canyon National Park, Arizona, from new hard rock mining activity. House Rock Valley was designated as the east parcel of the segregated lands near the Grand Canyon. This map was needed to provide connectivity for the geologic framework of the Grand Canyon segregated land areas. This geologic map of the House Rock Valley area encompasses approximately 280 mi2 (85.4 km2) within Coconino County, northern Arizona, and is bounded by longitude 111 degrees 37'30' to 112 degrees 05' W. and latitude 36 degrees 30' to 36 degrees 50' N. The map area is in the eastern part of the Arizona Strip, which lies within the southern Colorado Plateaus geologic province (herein Colorado Plateau). The Arizona Strip is the part of Arizona lying north of the Colorado River. The map is bound on the east by the Colorado River in Marble Canyon within Grand Canyon National Park and Glen Canyon National Recreation Area, on the south and west by the Kaibab National Forest and Grand Canyon National Game Preserve, and on the north by the Vermilion Cliffs Natural Area, the Paria Canyon Vermilion Cliffs Wilderness Area, and the Vermilion Cliffs National Monument. House Rock State Buffalo Ranch also bounds the southern edge of the map area. The Bureau of Land Management Arizona Field Office in St. George, Utah, manages public lands of the Vermilion Cliffs Natural Area, Paria Canyon - Vermilion Cliffs Wilderness and Vermilion Cliffs National Monument. The North Kaibab Ranger District in Fredonia, Arizona, manages U.S. Forest Service land along the west edge of the map area and House Rock State Buffalo Ranch

Cenozoic alkaline volcanic rocks with carbonatite affinity in the Bohemian Massif: Their sources and magma generation

Czech Academy of Sciences Publication Activity Database

Ulrych, Jaromír; Štěpánková-Svobodová, Jana

2014-01-01

Roč. 46, 1/2 (2014), s. 45-58 ISSN 0369-2086 R&D Projects: GA AV ČR(CZ) IAA300130902 Institutional support: RVO:67985831 Keywords : alkaline volcanic rocks * melilitic rocks * carbonatites * magma generation * metasomatism * Cenozoic * Bohemian Massif Subject RIV: DB - Geology ; Mineralogy

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

Energy Technology Data Exchange (ETDEWEB)

Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

2008-07-01

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

Developing ecological site and state-and-transition models for grazed riparian pastures at Tejon Ranch, California

Science.gov (United States)

Felix P. Ratcliff; James Bartolome; Michele Hammond; Sheri Spiegal; Michael White

2015-01-01

Ecological site descriptions and associated state-and-transition models are useful tools for understanding the variable effects of management and environment on range resources. Models for woody riparian sites have yet to be fully developed. At Tejon Ranch, in the southern San Joaquin Valley of California, we are using ecological site theory to investigate the role of...

Importance of dust storms in the diagenesis of sandstones: a case study, Entrada sandstone in the Ghost Ranch area, New Mexico, USA

Science.gov (United States)

Orhan, Hükmü

1992-04-01

The importance of dust storms on geological processes has only been studied recently. Case-hardening, desert-varnish formation, duricrust development, reddening and cementation of sediments and caliche formation, are some important geological processes related to dust storms. Dust storms can also be a major source for cements in aeolian sandstones. The Jurassic aeolian Entrada Formation in the Ghost Ranch area is composed of quartz with minor amounts of feldspar and rock fragments, and is cemented with smectite as grain coatings and calcite and kaolinite as pore fillings. Smectite shows a crinkly and honeycomb-like morphology which points to an authigenic origin. The absence of smectite as framework grains and the presence of partially dissolved grains, coated with smectite and smectite egg-shells, indicate an external source. Clay and fine silt-size particles are believed to be the major source for cements, smectite and calcite in the Entrada Formation. The common association of kaolinite with altered feldspar, and the absence of kaolinite in spots heavily cemented with calcite, lead to the conclusions that the kaolinite formation postdates carbonates and that framework feldspar grains were the source of kaolinite.

Paleoproterozoic mojaveprovince in northwestern Mexico? Isotopic and U-Pb zircon geochronologic studies of precambrian and Cambrian crystalline and sedimentary rocks, Caborca, Sonora

Science.gov (United States)

Lang, Farmer G.; Bowring, S.A.; Matzel, J.; Maldonado, G.E.; Fedo, C.; Wooden, J.

2005-01-01

Whole-rock Nd isotopic data and U-Pb zircon geochronology from Precambrian crystalline rocks in the Caborca area, northern Sonora, reveal that these rocks are most likely a segment of the Paleoproterozoic Mojave province. Supporting this conclusion are the observations that paragneiss from the ??? 1.75 Ga Bamori Complex has a 2.4 Ga Nd model age and contains detrital zircons ranging in age from Paleo- proterozoic (1.75 Ga) to Archean (3.2 Ga). Paragneisses with similar age and isotopic characteristics occur in the Mojave province in southern California. In addition, "A-type" granite exposed at the southern end of Cerro Rajon has ca 2.0 Ga Nd model age and a U-Pb zircon age of 1.71 Ga, which are similar to those of Paleoproterozoic granites in the Mojave province. Unlike the U.S. Mojave province, the Caborcan crust contains ca. 1.1 Ga granite (Aibo Granite), which our new Nd isotopic data suggest is largely the product of anatexis of the local Precambrian basement. Detrital zircons from Neoproterozoic to early Cambrian miogeoclinal arenites at Caborca show dominant populations ca. 1.7 Ga, ca. 1.4 Ga, and ca. 1.1 Ga, with subordinate Early Cambrian and Archean zircons. These zircons were likely derived predominately from North American crust to the east and northeast, and not from the underlying Caborcan basement. The general age and isotopic similarities between Mojave province basement and overlying miogeoclinal sedimentary rocks in Sonora and southern California is necessary, but not sufficient, proof of the hypothesis that Sonoran crust is allochthonous and was transported to its current position during the Mesozoic along the proposed Mojave-Sonora megashear. One viable alternative model is that the Caborcan Precambrian crust is an isolated, autochthonous segment of Mojave province crust that shares a similar, but not identical, Proterozoic geological history with Mojave province crust found in the southwest United States ?? 2005 Geological Society of America.

The research into the quality of rock surfaces obtained by abrasive water jet cutting

Czech Academy of Sciences Publication Activity Database

Młynarczuk, M.; Skiba, M.; Sitek, Libor; Hlaváček, Petr; Kožušníková, Alena

2014-01-01

Roč. 59, č. 4 (2014), s. 925-940 ISSN 0860-7001 R&D Projects: GA MŠk ED2.1.00/03.0082; GA ČR GAP104/12/1988 Institutional support: RVO:68145535 Keywords : water jet * rock cutting * surface quality * roughness * variogram Subject RIV: JQ - Machines ; Tools Impact factor: 0.608, year: 2013 http://mining.archives.pl

Correlation Analysis of the Ultrasonic Emission from Loaded Rock Samples – the Study of Interaction of Microcracking Nucleation Centres

Czech Academy of Sciences Publication Activity Database

Vilhelm, J.; Rudajev, Vladimír; Lokajíček, Tomáš; Veverka, Ján

2008-01-01

Roč. 41, č. 5 (2008), s. 695-714 ISSN 0723-2632 R&D Projects: GA ČR GA205/04/0088; GA ČR GA205/06/0906 Institutional research plan: CEZ:AV0Z30130516; CEZ:AV0Z30460519 Keywords : rock sample * ultrasonic emission * cracks nucleation * autocorrelation analysis * laboratory loading Subject RIV: DB - Geology ; Mineralogy Impact factor: 0.589, year: 2008

Field studies of game and livestock under African ranching conditions

International Nuclear Information System (INIS)

King, J.M.

1982-01-01

A model was used to integrate the results of tritiated-water studies on game and livestock under African ranching conditions. The model illustrated the two main functions of water in a tropical herbivore, i.e. as a medium for intermediary metabolism and for evaporative cooling. The close relationship between water and nutrition in the ecosystem is reflected in the water and energy conservation mechanisms which operate concomitantly in the animal. Arid-adapted animals can maintain productivity, albeit low, on a limited water intake despite high environmental heat loads. This is achieved because of a number of physical as well as physiological attributes, which can reduce the effect of the environmental heat load without affecting the intake of food and its utilization. (author)

Draft Environmental Impact Report/Environmental Impact Statement. Cullinan Ranch Specific Plan. Appendices.

Science.gov (United States)

1983-05-01

0XandA±liA Poison hemlock Cgn~i lfAQUIAtW Hottentot-fig 14espmbrvunthe~mmgjj jaumea 1LU31A carnos * Sea lavender Lim~nium califgrnicum miner’s lettuce ...MeagubryAnthomuw odu~lef Jaumea. JAI.mA ZAXn2M Sea lavender Liumnim £&JJ.±oLnicim Miner’s lettuce Montia perflnaa Li nanthus LTfAnDnhILE granAilau...PROPUCT IN P 100 W 4tM POLLINATION Il 12.10 190 1320 TOTAL 1901 93,00 II I ECONOMIC FEASIBILITY OF THE ". CULLINAN RANCH FOR AGR I CULTURAL PRODUCT I ON 1

Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

2017-03-01

Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

Palaeolithic/Mesolithic stratigraphic sequences at Údolí samoty and Janova zátoka rock shelters (Northern Bohemia)

Czech Academy of Sciences Publication Activity Database

Svoboda, Jiří; Novák, J.; Novák, Martin; Sázelová, S.; Demek, J.; Hladilová, Š.; Peša, V.

2013-01-01

Roč. 43, č. 4 (2013), s. 469-488 ISSN 0342-734X R&D Projects: GA ČR GA13-08169S Institutional support: RVO:68081758 Keywords : Pleistocene/Holocene boundary * Northern Bohemia * stratigraphic sequences * rock shelters * environment Subject RIV: AC - Archeology, Anthropology, Ethnology

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

Science.gov (United States)

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2017-11-08

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

The 3.1 Ga Nuggihalli chromite deposits, Western Dhawar craton (India)

DEFF Research Database (Denmark)

Mukherjee, Ria; Mondal, Sisir K.; Frei, Robert

2012-01-01

The Nuggihalli greenstone belt is part of the older greenstone belts (3.4 - 3.0 Ga) in the Western Dharwar Craton, southern India. This greenstone sequence consists of conformable metavolcanic and metasedimentary supracrustal rock assemblages that belong to the Sargur Group. Sill-like ultramafic......-mafic plutonic bodies are present within these supracrustal rocks (schist rocks) which are in turn enclosed by tonalite-trondhjemite-granodiorite gneiss (TTG). The sill-like ultramafic-mafic rocks are cumulates derived from a high-Mg parental magma that are represented by chromitite-hosted serpentinite...... and tremolite-chlorite-actinolite- schist (altered peridotite), anorthosite, pyroxenite, and gabbro hosting magnetite bands. The first whole-rock Sm-Nd data for the peridotite anorthosite- pyroxenite-gabbro unit has been obtained yielding an age of 3125 ± 120 Ma (MSWD = 1.3) which is similar to reported ages...

Determinants of elephant distribution at Nazinga Game Ranch, Burkina Faso

Science.gov (United States)

Jenks, Jonathan A.; Klaver, Robert W.; Wicks, Zeno W.

2007-01-01

We used seasonal ground total counts and remote sensing and GIS technology to relate elephant (Loxodonta africana africana) distribution at Nazinga Game Ranch to environmental and anthropogenic factors. Variables used in analyses were normalized difference vegetation index, elevation, stream density, density of poaching and human illegal activities, distance to dams, distance to rivers, distance to roads, and distance to poaching risk. Contrary to our expectation, road traffic did not disturb elephants. Strong negative relationships were documented between elephant abundance and stream density, distance to dams, and poaching density. Density of poaching and other human illegal activities explained 81%, vegetation greenness 6%, and stream density 3% of the variation in elephant density. Elephant distribution represented a survival strategy affected by poaching, food quality and abundance, and water availability. 

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

OpenAIRE

Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

2017-01-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

Science.gov (United States)

Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

2012-06-01

Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

93 years of stand density and land-use legacy research at the Coulter Ranch Study Site (P-53)

Science.gov (United States)

Andrew J. Sanchez Meador; Margaret M. Moore

2008-01-01

In 1913, the Fort Valley Experimental Forest initiated an unprecedented case-study experiment to determine the effects of harvesting methods on tree regeneration and growth on a ponderosa pine-Gambel oak forest at Coulter Ranch in northern Arizona. The harvesting methods examined were seed-tree, group selection, and light selection. In addition, the effects of...

The ongoing search for the oldest rock on the Danish island of Bornholm: new U-Pb zircon ages for a quartz-rich xenolith and country rock from the Svaneke Granite

DEFF Research Database (Denmark)

Waight, Tod Earle; Serre, Simon H.; Næsby, Sebastian H.

2017-01-01

Previous geochronological studies on the Danish island of Bornholm have not identified any rocks older than c. 1.46 Ga. New LA-ICP-MS U-Pb zircon ages are presented for a xenolith within, and the country rock gneiss adjacent to, the Svaneke Granite on Bornholm. The xenolith is fine......-grained and quartz-rich and was likely derived from either a quartz-rich sedimentary protolith or a hydrothermally altered felsic volcanic rock. The relatively fine-grained felsic nature of the country rock gneiss and the presence of large zoned feldspars that may represent phenocrysts suggest its protolith may have...... been a felsic volcanic or shallow intrusive rock. A skarn-like inclusion from a nearby locality likely represents an originally carbonate sediment and is consistent with supracrustal rocks being present at least locally. Zircon data from the xenolith define an upper intercept age of 1483 ± 12 Ma (2σ...

Arabidopsis ROCK1 transports UDP-GlcNAc/UDP-GalNAc and regulates ER protein quality control and cytokinin activity

Czech Academy of Sciences Publication Activity Database

Niemann, M.C.E.; Bartrina, I.; Ashikov, A.; Weber, H.; Novák, Ondřej; Spíchal, Lukáš; Strnad, Miroslav; Strasser, R.; Bakker, H.; Schmülling, T.; Werner, T.

2015-01-01

Roč. 112, č. 1 (2015), s. 291-296 ISSN 0027-8424 R&D Projects: GA MŠk LK21306; GA MŠk(CZ) LO1204 Institutional support: RVO:61389030 Keywords : ROCK1 * cytokinin * CKX Subject RIV: EF - Botanics Impact factor: 9.423, year: 2015

Growth of GaSb1-xBix by molecular beam epitaxy

DEFF Research Database (Denmark)

Song, Yuxin; Wang, Shumin; Roy, Ivy Saha

2012-01-01

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi ......As substrates were compared and no apparent difference for Bi incorporation was found.......Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi...... concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and Ga...

The transition from granite to banded aplite-pegmatite sheet complexes: An example from Megiliggar Rocks, Tregonning topaz granite, Cornwall

Czech Academy of Sciences Publication Activity Database

Breiter, Karel; Ďurišová, Jana; Hrstka, Tomáš; Korbelová, Zuzana; Vašinová Galiová, M.; Müller, A.; Simons, B.; Shail, R. K.; Williamson, B. J.; Davies, J. A.

302/303, March 2018 (2018), s. 370-388 ISSN 0024-4937 R&D Projects: GA ČR GA14-13600S Institutional support: RVO:67985831 Keywords : granite * aplite * pegmatite * magmatic layering * Megiliggar Rocks * Cornwall Subject RIV: DB - Geology ; Mineralogy OBOR OECD: Geology Impact factor: 3.677, year: 2016

77 FR 48138 - Topaz Solar Farms LLC; High Plains Ranch II, LLC; Bethel Wind Energy LLC; Rippey Wind Energy LLC...

Science.gov (United States)

2012-08-13

... Ranch II, LLC; Bethel Wind Energy LLC; Rippey Wind Energy LLC; Pacific Wind, LLC; Colorado Highlands Wind, LLC; Shooting Star Wind Project, LLC; Notice of Effectiveness of Exempt Wholesale Generator or... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket Nos. EG12-63-000; EG12-64-000...

Growth and characterization of β-Ga2O3 crystals

Science.gov (United States)

Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

2017-01-01

Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

Science.gov (United States)

Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

2017-06-28

In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

Proterozoic events recorded in quartzite cobbles at Jack Hills, Western Australia: New constraints on sedimentation and source of > 4 Ga zircons

Science.gov (United States)

Grange, Marion L.; Wilde, Simon A.; Nemchin, Alexander A.; Pidgeon, Robert T.

2010-03-01

Rare heavy mineral bands within quartzite cobbles were identified in two conglomerate units within the Jack Hills belt, Western Australia. Seven zircon-bearing cobbles were analysed from one location (site 152) and three from another (site 154), both approximately 1 km west of the site where zircons in excess of 4 Ga are abundant (W74 'discovery' site). Individual pebbles from the 152 site reveal three distinctive features, containing either zircons > 3.0 Ga in age, 4 Ga was discovered from the entire suite of pebbles, in contrast to the well-studied W74 site. A single detrital zircon with an age of 1220 ± 42 Ma from location 152 is the youngest grain so far reported from sedimentary rocks at Jack Hills. It shows magmatic oscillatory zoning and thus implies at least two sedimentary cycles within the Proterozoic; requiring erosion of an igneous precursor, incorporation into a clastic sediment, induration and subsequent erosion and transport to be hosted in the conglomerate. The nearest source for rocks of this age is the Bangemall Supergroup in the Collier Basin, ˜ 100 km northeast in the Capricorn Orogen. This would imply tectonic interleaving of originally more extensive Bangemall rocks, possibly related to activity along the Cargarah Shear Zone that traverses the Jack Hills belt. The lack of > 4.1 Ga zircons in the pebbles is highly significant, suggesting the immediate source of ancient zircons was no longer present at the Earth's surface. This equates with a general lack of ancient crystals noted in rocks that contain Proterozoic zircons from previous studies and implies that such grains diminish in number as earlier sedimentary rocks were successively recycled.

Compilation of new and previously published geochemical and modal data for Mesoproterozoic igneous rocks of the St. Francois Mountains, southeast Missouri

Science.gov (United States)

du Bray, Edward A.; Day, Warren C.; Meighan, Corey J.

2018-04-16

The purpose of this report is to present recently acquired as well as previously published geochemical and modal petrographic data for igneous rocks in the St. Francois Mountains, southeast Missouri, as part of an ongoing effort to understand the regional geology and ore deposits of the Mesoproterozoic basement rocks of southeast Missouri, USA. The report includes geochemical data that is (1) newly acquired by the U.S. Geological Survey and (2) compiled from numerous sources published during the last fifty-five years. These data are required for ongoing petrogenetic investigations of these rocks. Voluminous Mesoproterozoic igneous rocks in the St. Francois Mountains of southeast Missouri constitute the basement buried beneath Paleozoic sedimentary rock that is over 600 meters thick in places. The Mesoproterozoic rocks of southeast Missouri represent a significant component of approximately 1.4 billion-year-old (Ga) igneous rocks that crop out extensively in North America along the southeast margin of Laurentia and subsequent researchers suggested that iron oxide-copper deposits in the St. Francois Mountains are genetically associated with ca. 1.4 Ga magmatism in this region. The geochemical and modal data sets described herein were compiled to support investigations concerning the tectonic setting and petrologic processes responsible for the associated magmatism.

Pictorial series of the manifestations of the dynamics of the Earth. 3. Historical images of landslides and rock falls

Czech Academy of Sciences Publication Activity Database

Kozák, Jan; Rybář, Jan

2003-01-01

Roč. 47, č. 1 (2003), s. 221-232 ISSN 0039-3169 R&D Projects: GA ČR GA205/00/0665 Institutional research plan: CEZ:AV0Z3046908; CEZ:AV0Z3012916 Keywords : landslides * rock falls * historical pictures Subject RIV: DB - Geology ; Mineralogy Impact factor: 0.426, year: 2003

Pb-Pb geochronology in zircon of the basement rocks of the southern portion of the Araguaia Belt - Paraiso do Tocantins region, Brazil

International Nuclear Information System (INIS)

Arcanjo, Silvia Helena de Souza; Moura, Candido Augusto Veloso

2000-01-01

Recent geochronological studies of the basement orthogneisses of the northern region of the Araguaia belt showed the occurrence of both Archean (2.85 Ga) and Early Proterozoic (1.85 Ga) rocks. The oldest gneisses were grouped in the Colmeia Complex, the younger were named the Cantao Gneiss. In the southern portion of the Araguaia belt, the basement sequences include metavolcanic-sedimentary rocks, tonalitic, calc-silicate, and alkaline gneisses, and granitic rocks. All of these sequences have been considered as Archean in age, although no geochronological data are available to test this hypothesis. The metavolcanic-sedimentary rocks are included in the Rio do Coco Group, while the granitic rocks are represented by the Serrote and Matanca granites. The tonalitic and calc-silicate gneisses were grouped with Colmeia and Rio do Mangues Complexes, and the alkaline gneisses in the Monte Santo Suite. These gneisses were investigated geochronologically by single zircon Pb-evaporation methods in order to define their stratigraphic interrelationships, and to contribute to a greater understanding of the geological evolution of this crustal segment. The single zircon ages of the tonalitic and calc-silicate gneisses range between 1.8 and 2.1 Ga. An age of about 1.0 Ga, was obtained for the alkaline gneisses of Serra da Estrela (Monte Santo Suite). These data along with the single zircon age of 1.85 Ga. published for the Serrote Granite, indicate the widespread occurrence of Proterozoic rocks in the basement of the southern part of Araguaia belt. However, the existence of Arquean sequences in this region can not be discarded since the volcanic-sedimentary rocks of the Rio do Coco Group have not as yet been dated. The correlation of tonalitic and calc-silicate gneisses with the Colmeia Complex was not confirmed, so these gneisses have been grouped with the Early proterozoic Rio dos Mangues Complex. Thus, it is suggested that a significant part of the basement of the southern

Cattle ranching intensification in Brazil can reduce global greenhouse gas emissions by sparing land from deforestation.

Science.gov (United States)

Cohn, Avery S; Mosnier, Aline; Havlík, Petr; Valin, Hugo; Herrero, Mario; Schmid, Erwin; O'Hare, Michael; Obersteiner, Michael

2014-05-20

This study examines whether policies to encourage cattle ranching intensification in Brazil can abate global greenhouse gas (GHG) emissions by sparing land from deforestation. We use an economic model of global land use to investigate, from 2010 to 2030, the global agricultural outcomes, land use changes, and GHG abatement resulting from two potential Brazilian policies: a tax on cattle from conventional pasture and a subsidy for cattle from semi-intensive pasture. We find that under either policy, Brazil could achieve considerable sparing of forests and abatement of GHGs, in line with its national policy targets. The land spared, particularly under the tax, is far less than proportional to the productivity increased. However, the tax, despite prompting less adoption of semi-intensive ranching, delivers slightly more forest sparing and GHG abatement than the subsidy. This difference is explained by increased deforestation associated with increased beef consumption under the subsidy and reduced deforestation associated with reduced beef consumption under the tax. Complementary policies to directly limit deforestation could help limit these effects. GHG abatement from either the tax or subsidy appears inexpensive but, over time, the tax would become cheaper than the subsidy. A revenue-neutral combination of the policies could be an element of a sustainable development strategy for Brazil and other emerging economies seeking to balance agricultural development and forest protection.

An investigation into beef calf mortality on five high-altitude ranches that selected sires with low pulmonary arterial pressures for over 20 years.

Science.gov (United States)

Neary, Joseph M; Gould, Daniel H; Garry, Franklyn B; Knight, Anthony P; Dargatz, David A; Holt, Timothy N

2013-03-01

Producer reports from ranches over 2,438 meters in southwest Colorado suggest that the mortality of preweaned beef calves may be substantially higher than the national average despite the selection of low pulmonary pressure herd sires for over 20 years. Diagnostic investigations of this death loss problem have been limited due to the extensive mountainous terrain over which these calves are grazed with their dams. The objective of the current study was to determine the causes of calf mortality on 5 high-altitude ranches in Colorado that have been selectively breeding sires with low pulmonary pressure (branding (6 weeks of age) in the spring to weaning in the fall (7 months of age). Clinical signs were recorded, and blood samples were taken from sick calves. Postmortem examinations were performed, and select tissue samples were submitted for aerobic culture and/or histopathology. On the principal study ranch, 9.6% (59/612) of the calves that were branded in the spring either died or were presumed dead by weaning in the fall. In total, 28 necropsies were performed: 14 calves (50%) had lesions consistent with pulmonary hypertension and right-sided heart failure, and 14 calves (50%) died from bronchopneumonia. Remodeling of the pulmonary arterial system, indicative of pulmonary hypertension, was evident in the former and to varying degrees in the latter. There is a need to better characterize the additional risk factors that complicate pulmonary arterial pressure testing of herd sires as a strategy to control pulmonary hypertension.

Sm-Nd isochrone of 2,1 Ga in ores of two samples from Santa Maria Chico Granulite Complex

International Nuclear Information System (INIS)

Hartmann, L.A.

1987-01-01

Sm and Nd isotopes were determined on garnet and plagioclasse from a metapelite and on garnet and clinopyroxene from a mafic gneiss. The age of this metamorphic event in the Santa Maria Chico Granulite Complex is 2.1 Ga. The age of generaion of the protoliths is 2.6 Ga, as determined on total rock samples. (author) [pt

Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

International Nuclear Information System (INIS)

Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

2015-01-01

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

PALEOARCHEAN MAFIC ROCKS OF THE SOUTHWESTERN SIBERIAN CRATON: PRELIMINARY GEOCHRONOLOGY AND GEOCHEMICAL CHARACTERIZATION

Directory of Open Access Journals (Sweden)

A. V. Ivanov

2017-01-01

Full Text Available The Siberian craton consists of Archean blocks, which were welded up into the same large unit by ca 1.9 Ga [Gladkochub et al., 2006; Rojas-Agramonte et al., 2011]. The history of the constituent Archean blocks is mosaic because of limited number of outcrops, insufficient sampling coverage because of their location in remote regions and deep forest and difficulties with analytical studies of ancient rocks, which commonly underwent metamorphic modifications and secondary alterations. In this short note, we report data on discovery of unusual for Archean mafic rocks of ultimate fresh appearance. These rocks were discovered within southwestern Siberian craton in a region near a boundary between Kitoy granulites of the Sharyzhalgai highgrade metamorphic complex and Onot green-schist belt (Fig. 1. Here we present preliminary data on geochronology of these rocks and provide their geochemical characterization.

Final Environmental Impact Report/Environmental Impact Statement, Cullinan Ranch Specific Plan, City of Vallejo, Solano County, California.

Science.gov (United States)

1984-05-01

Report Oil Adobe/Frates Ranch Project, City of Petaluma, April 1981. Sedway Cooke and Angus McDonald Associates, Petaluma Wastewater Irrigation Study...Vallejo contribute to City revenues via a franchise tax, the total of iich for the 1981-1982 Budget is expected to be $410,472 a year, or $13.69 per...493,200 -- Transient Occupancy Tax 156,600 .,Real Property Conveyance Tax 285,800 Business License Tax 66,400 Franchise Fees 61,600 Vehicle in-Lieu Fee

The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

International Nuclear Information System (INIS)

Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

2006-01-01

Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

Application of the GA-BP Neural Network in Earthwork Calculation

Science.gov (United States)

Fang, Peng; Cai, Zhixiong; Zhang, Ping

2018-01-01

The calculation of earthwork quantity is the key factor to determine the project cost estimate and the optimization of the scheme. It is of great significance and function in the excavation of earth and rock works. We use optimization principle of GA-BP intelligent algorithm running process, and on the basis of earthwork quantity and cost information database, the design of the GA-BP neural network intelligent computing model, through the network training and learning, the accuracy of the results meet the actual engineering construction of gauge fan requirements, it provides a new approach for other projects the calculation, and has good popularization value.

The Kimberlites and related rocks of the Kuruman Kimberlite Province, Kaapvaal Craton, South Africa

Science.gov (United States)

Donnelly, Cara L.; Griffin, William L.; O'Reilly, Suzanne Y.; Pearson, Norman J.; Shee, Simon R.

2011-03-01

The Kuruman Kimberlite Province is comprised of 16 small pipes and dikes and contains some of the oldest known kimberlites (>1.6 Ga). In this study, 12 intrusions are subdivided into three groups with distinct petrology, age, and geochemical and isotopic compositions: (1) kimberlites with groundmass perovskites defining a Pb-Pb isochron age of 1787 ± 69 Ma, (2) orangeite with a U-Pb perovskite age of 124 ± 16 Ma, and (3) ultramafic lamprophyres (aillikite and mela-aillikite) with a zircon U-Pb age of 1642 ± 46 Ma. The magma type varies across the Province, with kimberlites in the east, lamprophyres in the west and orangeite and ultramafic lamprophyres to the south. Differences in the age and petrogenesis of the X007 orangeite and Clarksdale and Aalwynkop aillikites suggest that these intrusions are probably unrelated to the Kuruman Province. Kimberlite and orangeite whole-rock major and trace element compositions are similar to other South African localities. Compositionally, the aillikites typically lie off kimberlite and orangeite trends. Groundmass mineral chemistry of the kimberlites has some features more typical of orangeites. Kimberlite whole-rock Sr and Nd isotopes show zoning across the Province. When the kimberlites erupted at ~1.8 Ga, they sampled a core volume (ca 50 km across) of relatively depleted SCLM that was partially surrounded by a rim of more metasomatized mantle. This zonation may have been related to the development of the adjacent Kheis Belt (oldest rocks ~2.0 Ga), as weaker zones surrounding the more resistant core section of SCLM were more extensively metasomatized.

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

2003-01-01

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

Natural mortality amoung four common ungulate species on Letaba Ranch, Limpopo Province, South Africa

Directory of Open Access Journals (Sweden)

H.P. Cronje

2002-01-01

Full Text Available Five years of mortality data of impala Aepyceros melampus, blue wildebeest Connochaetes taurinus, buffalo Syncerus caffer and kudu Tragelaphus strepsiceros have been used to describe the minimum mortality profiles of the respective species in an open savanna system with the full compliment of predators. Predation is the principle cause of natural mortalities on the study site, Letaba Ranch, which is adjacent to the Kruger National Park. The principle cause of impala mortality are leopards Panthera pardus and wild dogs Lycaon pictus. Lion Panthera leo were major contributors to the mortality of wildebeest and buffalo. Anthrax Bacillus anthracis was the main cause of kudu mortality.

Late Paleozoic volcanic rocks of the Intra-Sudetic Basin, Bohemian Massif: Petrological and geochemical characteristics

Czech Academy of Sciences Publication Activity Database

Ulrych, Jaromír; Fediuk, F.; Lang, Miloš; Martinec, Petr

2004-01-01

Roč. 64, č. 2 (2004), s. 127-153 ISSN 0009-2819 R&D Projects: GA AV ČR(CZ) IAA3013903 Keywords : Late Paleozoic * volcanic rocks * Bohemian Massif Subject RIV: DB - Geology ; Mineralogy Impact factor: 0.643, year: 2004

Constraints on the origin of gabbroic rocks from the Moldanubian-Moravian units boundary (Bohemian Massif, Czech Republic and Austria)

Czech Academy of Sciences Publication Activity Database

Ulrych, Jaromír; Ackerman, Lukáš; Kachlík, V.; Hegner, E.; Balogh, K.; Langrová, Anna; Luna, J.; Fediuk, F.; Lang, M.; Filip, Jiří

2010-01-01

Roč. 61, č. 3 (2010), s. 175-191 ISSN 1335-0552 R&D Projects: GA AV ČR IAA3013403; GA AV ČR IAA300130902 Institutional research plan: CEZ:AV0Z30130516 Keywords : gabbroic rocks * geochemistry * Sr-Nd isotopes * K-Ar ages * Moravian Unit * Moldanubian Unit * Bohemian Massif Subject RIV: DD - Geochemistry Impact factor: 0.909, year: 2010

Optimising methods for community-based sea cucumber ranching: Experimental releases of cultured juvenile Holothuria scabra into seagrass meadows in Papua New Guinea

Directory of Open Access Journals (Sweden)

Cathy Hair

2016-05-01

Full Text Available Hatchery-cultured juveniles of the commercial holothurian, sandfish (Holothuria scabra, were used for release experiments in a variety of marine habitats under traditional marine tenure near Kavieng, Papua New Guinea (PNG. Juveniles of approximately 4 g mean weight were released inside 100 m2 sea pens installed within seagrass meadows nearby partner communities, under the care of local ‘wardens’. Within each sea pen, varying levels of protection (free release, 1-day cage and 7-day cage were provided at release in order to determine if short-term predator exclusion improved survival. Ossicles of juvenile sandfish were tagged with different fluorochromes for each treatment and sandfish survival and growth was recorded after release. A range of biophysical parameters were recorded at the four sites. Contrary to expectations, short-term cage protection did not lead to higher survival at three sites, while a fourth site, despite meeting all considered criteria for suitable release habitat, experienced total loss of juveniles. There were significant differences in mean weight of juveniles between sites after four months. Multivariate analysis of biophysical factors clearly separated the sea pen habitats, strongly differentiating the best-performing site from the others. However, further research is needed to elucidate which biophysical or human factors are most useful in predicting the quality of potential sea ranch sites. Methods developed or refined through these trials could be used to establish pilot test plots at potential ranching sites to assess site suitability and provide guidance on the level of animal husbandry required before commencing community sea ranching operations in New Ireland Province, PNG. Keywords: Holothuria scabra, Mariculture, Sea pens, Predator exclusion, Principal components analysis, Biophysical variables

Long-term surveillance plan for the Collins Ranch disposal site, Lakeview, Oregon

International Nuclear Information System (INIS)

1994-08-01

This long-term surveillance plan (LTSP) for the Uranium Mill Tailings Remedial Action (UMTRA) Project Collins Ranch disposal site, Lakeview, Oregon, describes the surveillance activities for the disposal cell. The U.S. Department of Energy (DOE) will carry out these activities to ensure that the disposal cell continues to function as designed. This final LTSP was prepared as a requirement for acceptance under the U.S. Nuclear Regulatory Commission (NRC) general license for custody and long-term care of residual radioactive materials. This LTSP documents whether the land and interests are owned by the United States and details how long-term care of the disposal site will be carried out. It is based on the DOE's Guidance for Implementing the UMTRA Project Long-term Surveillance Program (DOE, 1992a)

Give Water a Hand. Farm and Ranch Site Action Guide. Organizing Water Conservation and Pollution Prevention Service Projects in Your Community.

Science.gov (United States)

Wisconsin Univ., Madison. Coll. of Agricultural and Life Sciences.

Students grades 4-8 can use this guide to explore the topics of water, and water conservation on a farm or ranch, while conducting an environmental community service project. Youth groups, led by a group leader, work with local experts from business, government, or environmental organizations to complete the project. Nine activity sections involve…

Evolution of the Archean Mohorovičić discontinuity from a synaccretionary 4.5 Ga protocrust

Science.gov (United States)

Hamilton, Warren B.

2013-12-01

This review evaluates and rejects the currently dominant dogmas of geodynamics and geochemistry, which are based on 1950s-1970s assumptions of a slowly differentiating Earth. Evidence is presented for evolution of mantle, crust, and early Moho that began with fractionation of most crustal components, synchronously with planetary accretion, into mafic protocrust by ~ 4.5 Ga. We know little about Hadean crustal geology (> 3.9 Ga) except that felsic rocks were then forming, but analogy with Venus, and dating from the Moon, indicate great shallow disruption by large and small impact structures, including huge fractionated impact-melt constructs, throughout that era. The mantle sample and Archean (preserved Archean crust to its base, and of the thick mafic volcanic rocks erupted on that crust. Lower TTG crust, kept mobile by its high radioactivity and by insulating upper crust, rose diapirically into the upper crust as dense volcanic rocks sagged synformally. The mobile lower crust simultaneously flowed laterally to maintain subhorizontal base and surface, and dragged overlying brittler granite-and-greenstone upper crust. Petrologically required garnet-rich residual protocrust incrementally delaminated, sank through low-density high-mantle magnesian dunite, and progressively re-enriched upper mantle, mostly metasomatically. Archean and earliest Proterozoic craton stabilization and development of final Mohos followed regionally complete early delamination of residual protocrust, variously between ~ 2.9 and 2.2 Ga. Where some protocrust remained, Proterozoic basins, filled thickly by sedimentary and volcanic rocks, developed on Archean crust, beneath which delamination of later residual protocrust continued top-down enrichment of upper mantle. That reenrichment enabled modern-style plate tectonics after ~ 600 Ma, with a transition regime beginning ~ 850 Ma.

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

Metastasis of aggressive amoeboid sarcoma cells is dependent on Rho/ROCK/MLC signaling

Czech Academy of Sciences Publication Activity Database

Kosla, Jan; Paňková, D.; Plachý, Jiří; Tolde, O.; Bicanova, K.; Dvořák, Michal; Rosel, D.; Brabek, J.

2013-01-01

Roč. 11, č. 1 (2013), s. 51 ISSN 1478-811X R&D Projects: GA MŠk(CZ) LC06061 Institutional support: RVO:68378050 Keywords : metastasis * sarcoma * rhoA * ROCK * MLC * amoeboid invasiveness * 3D environment * chicken model Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 4.672, year: 2013

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Science.gov (United States)

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Parasites gastro-intestinaux d'antilopes et de buffles (Syncerus caffer brachyceros du ranch de gibier de Nazinga au Burkina Faso

Directory of Open Access Journals (Sweden)

Belem AMG.

2009-01-01

Full Text Available Gastro-intestinal parasites of antelopes and buffalos (Syncerus caffer brachyceros from the Nazinga game ranch in Burkina Faso. Parasitological survey done on the digestive tracts of antelopes [roans (Hippotragus equinus koba, hartebeests (Alcelaphus buselaphus major, defassa waterbucks (Kobus ellipsiprymnus defassa, oribis (Ourebia ourebi quadriscopa] and buffalos (Syncerus caffer brachyceros from the Nazinga game ranch in Burkina Faso allowed the identification of gastrointestinal parasites and the estimation of their prevalence and load. Nine different nematode species and three cestode species were found. Females and larvae of Cooperia were not identified up to the species level and were recognized as Cooperia spp. The nematode species found were: Haemonchus contortus, Trichostrongylus axei, Cooperia curticei, Cooperia spatulata, Skrjabinema sp., Trichostrongylus colubriformis, Trichuris ovis, Bunostomum phlebotomum, and Oesophagostomum sp. Cestodes’ species were: Moniezia expansa, Avitellina centripunctata, and Stilesia globipunctata. It was also noted without a thorough investigation the presence of Setaria labiato-papillosa in the abdominal cavity and paramphistomes in the rumen. In spite of the presence of parasites on the antelopes and buffalos, their killing out percentages (47.5 to 54.7% indicated a good physical status.

Contrasting Nature of Magnetic Anomalies over Thin Sections Made out of Barrandien’s Basaltic Rocks Points to their Origin

Czech Academy of Sciences Publication Activity Database

Kletetschka, Günther; Pruner, Petr; Schnabl, Petr; Šifnerová, Kristýna

-, special issue (2012), s. 69-70 ISSN 1335-2806. [Castle meeting New Trends in Geomagnetism : Paleo, rock and environmental magnetism/13./. 17.06.2012-23.06.2012, Zvolen] R&D Projects: GA ČR GAP210/10/2351 Institutional support: RVO:67985831 Keywords : magnetic anomalies * thin sections * volcanic rocks Subject RIV: DE - Earth Magnetism, Geodesy, Geography http://gauss.savba.sk/GPIweb/conferences/Castle2012/abstrCastle.pdf

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Science.gov (United States)

Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

2017-02-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Directory of Open Access Journals (Sweden)

Kohei Ueno

2017-02-01

Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

Energy Technology Data Exchange (ETDEWEB)

Honnicke, M.G.; Mazzaro, I.; Manica, J.; Benine, E.; M da Costa, E.; Dedavid, B. A.; Cusatis, C.; Huang, X. R.

2009-09-13

We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.

The role of alternating current in photo-assisted electrochemical porosification of GaN

International Nuclear Information System (INIS)

Ainorkhilah, Mahmood; Naser, M. Ahmed; Yushamdan, Yusof; Kwong, Yam Fong; Zainuriah, Hassan; Tiginyanu, Ion; Siang, Chuah Lee

2013-01-01

In this paper, we report the formation of porous GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD) phi-scan and rocking curves measurements evidenced important features of the pore morphology and nanostructures. According to the FESEM micrographs, the spatial nano architecture of the porous structures exhibits pores with perfect hexagonal shape. The AFM measurements revealed an increase in the surface roughness induced by porosification. X-ray diffraction phi-scan showed that porous GaN sample maintained the epitaxial. (authors)

Petrogenesis of siliceous high-Mg series rocks as exemplified by the Early Paleoproterozoic mafic volcanic rocks of the Eastern Baltic Shield: enriched mantle versus crustal contamination

Science.gov (United States)

Bogina, Maria; Zlobin, Valeriy; Sharkov, Evgenii; Chistyakov, Alexeii

2015-04-01

rocks show no correlation between Th/Ta and La/Yb, (Nb/La)pm ratio and Th content, and eNd and (Nb/La)N ratio. At the same time, some correlation observed in the eNd-Mg# and (La/Sm)N-(Nb/La)N diagrams in combination with the presence of inherited zircons in the rocks does not allow us to discard completely the crustal contamination. Examination of Sm/Yb-La/Sm relations and the comparison with model melting curves for garnet and spinel lherzolites showed that the parental melts of the rocks were derived by 10-30% mantle melting at garnet-spinel facies transition. Two stage model can be proposed to explain such remarkable isotope-geochemical homogeneity of the mafic volcanic rocks over a large area: (1) ubiquitous emplacement of large volumes of sanukitoid melts in the lower crust of the shield at 2.7 Ga; (2) underplating of plume-derived DM melts at the crust-mantle boundary, melting of the lower crust of sanukitoid composition, and subsequent mixing of these melts with formation of SHMS melts at 2.4 Ga. A simple mixing model showed that in this case the Nd isotope composition of obtained melts remained practically unchanged at variable amounts of contaminant (up to 30%). This work was supported by the RFBR no. 14-05-00458.

SHRIMP zircon dating and LA-ICPMS Hf analysis of early Precambrian rocks from drill holes into the basement beneath the Central Hebei Basin, North China Craton

Directory of Open Access Journals (Sweden)

Yusheng Wan

2014-07-01

Full Text Available The Central Hebei Basin (CHB is one of the largest sedimentary basins in the North China Craton, extending in a northeast–southwest direction with an area of >350 km2. We carried out SHRIMP zircon dating, Hf-in-zircon isotopic analysis and a whole-rock geochemical study on igneous and metasedimentary rocks recovered from drill holes that penetrated into the basement of the CHB. Two samples of gneissic granodiorite (XG1-1 and gneissic quartz diorite (J48-1 have magmatic ages of 2500 and 2496 Ma, respectively. Their zircons also record metamorphic ages of 2.41–2.51 and ∼2.5 Ga, respectively. Compared with the gneissic granodiorite, the gneissic quartz diorite has higher ΣREE contents and lower Eu/Eu* and (La/Ybn values. Two metasedimentary samples (MG1, H5 mainly contain ∼2.5 Ga detrital zircons as well as late Paleoproterozoic metamorphic grains. The zircons of different origins have εHf (2.5 Ga values and Hf crustal model ages ranging from 0 to 5 and 2.7 to 2.9 Ga, respectively. Therefore, ∼2.5 Ga magmatic and Paleoproterozoic metasedimentary rocks and late Neoarchean to early Paleoproterozoic and late Paleoproterozoic tectono-thermal events have been identified in the basement beneath the CHB. Based on regional comparisons, we conclude that the early Precambrian basement beneath the CHB is part of the North China Craton.

Experimental investigation of acoustic emissions and their moment tensors in rock during failure

Czech Academy of Sciences Publication Activity Database

Aker, E.; Kühn, D.; Vavryčuk, Václav; Soldal, M.; Oye, V.

2014-01-01

Roč. 70, September (2014), s. 286-295 ISSN 1365-1609 R&D Projects: GA ČR(CZ) GAP210/12/1491 EU Projects: European Commission(XE) 230669 - AIM Institutional support: RVO:67985530 Keywords : acoustic emissions * focal mechanisms * moment tensors * rock fracturing * hoop stresses * laboratory experiment Subject RIV: DC - Siesmology, Volcanology, Earth Structure Impact factor: 1.686, year: 2014

ARSENIC REMOVAL FROM DRINKING WATER BY POINT OF USE REVERSE OSMOSIS. EPA DEMONSTRATION PROJECT AT SUNSET RANCH DEVELOPMENT IN HOMEDALE, ID. SIX-MONTH EVALUATION REPORT

Science.gov (United States)

This report documents the activities performed during and the results obtained from the first six months of the point of use arsenic removal treatment technology demonstration project at the Sunset Ranch Development in Homedale, ID. The objectives of the project are to evaluate t...

HEMATOLOGICAL BLOOD PARAMETERS OF YOUNG-OF-THE-YEAR CARPS (CYPRINIDAE REARED USING FISH RANCHING TECHNOLOGY IN THE SOUTHERN UKRAINE

Directory of Open Access Journals (Sweden)

Yu. Volichenko

2015-12-01

Full Text Available Purpose. To investigate the hematological characteristics of blood young-of-the-year carps reared using fish ranching technology in the southern Ukraine and to establish certain correlations between the main fish technical features of the studied groups of the young-of-the-year fish. Methodology. The studies were based on field and experimental methods adopted for fisheries, biochemical and statistical studies. Findings. The paper contains the data on mean fish weight, hematological and biochemical parameters of serum of young-of-the-year carps reared using fish ranching technology. Based on a comparative analysis of the obtained data, we detected significant peculiarities and qualitative difference in the absence of foam cells and basophils, which distinguish carp from the group of herbivorous fish, established significant correlations between mean fish weight and hematologic indices of blood. Marked by fish-breeding relationships with signs like weight and some parameters of blood components in all studied fish: hemoglobin in the range from 0.7858 to 0.9943, number of erythrocytes from 0.7843 to 0.9942, lymphocytes from 0.7848 to 0.9949, сholеsterol from 0.7640 to 0.9616 and triglycerides of 0.7499 in silver carp (Hypophthalmichthys molitrix and 0.9616 in common carp (Cyprinus carpio carpio. To show these relationships graphically, we used regression analysis and the obtained regression equations can give an accurate assessment of the quality of fish seeds through hematological blood parameters and mean weight. Originality. The analysis of hematological parameters of blood of young-of-the-year carps: common carp (Cyprinus carpio carpio, silver carp (Hypophthalmichthys molitrix, bighead carp (Hypophthalmichthys nobilis, grass carp (Ctenopharyngodon idella reared using fish ranching technology in the south of Ukraine was performed for the first time. Practical value. The obtained data allow scientifically recommending them as a component of

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

International Nuclear Information System (INIS)

Chakraborty, Apurba; Biswas, Dhrubes

2015-01-01

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

Investigation of (Ga,In) (As,P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation

International Nuclear Information System (INIS)

Bruehl, H.G.; Pietsch, U.; Lengeler, B.

1988-01-01

Synchrotron radiation was used to measure the rocking curves from (Ga, In) (As, P) single layers grown on an InP (100) oriented substrate. The incident angle was varied (changing correspondingly the X-ray incident-beam wavelength) in order to measure at extremely asymmetrical Bragg diffraction down to a glancing angle of 0.35 0 . The measured rocking curves could be interpreted by the semi-kinematic model of Petrashen with corrections for X-ray refraction and for the width of the rocking curve from the extended dynamical theory. (orig.)

Pb, Sr, and Nd isotopic compositions of a suite of Large Archean, igneous rocks, eastern Beartooth Mountains - Implications for crust-mantle evolution

Science.gov (United States)

Wooden, J. L.; Mueller, P. A.

1988-01-01

Compositionally diverse Late Archean rocks (2.74-2.79 Ga old) from the eastern Beartooth Mountains (Montana and Wyoming) were studied and shown to have the same initial Pb, Sr, and Nd isotopic ratios. Lead and Sr initial ratios are higher and Nd initial values lower than predicted for rocks derived from model mantle sources and strongly indicate the involvement of an older crustal reservoir in the genesis of these rocks. A model involving subduction of continental detritus and contamination of the overlying mantle is suggested.

Water - rock interaction in different rock environments

International Nuclear Information System (INIS)

Lamminen, S.

1995-01-01

The study assesses the groundwater geochemistry and geological environment of 44 study sites for radioactive waste disposal. Initially, the study sites were divided by rock type into 5 groups: (1) acid - intermediate rocks, (2) mafic - ultramafic rocks, (3) gabbros, amphibolites and gneisses that contain calc-silicate (skarn) rocks, (4) carbonates and (5) sandstones. Separate assessments are made of acid - intermediate plutonic rocks and of a subgroup that comprises migmatites, granite and mica gneiss. These all belong to the group of acid - intermediate rocks. Within the mafic -ultramafic rock group, a subgroup that comprises mafic - ultramafic plutonic rocks, serpentinites, mafic - ultramafic volcanic rocks and volcanic - sedimentary schists is also evaluated separately. Bedrock groundwaters are classified by their concentration of total dissolved solids as fresh, brackish, saline, strongly saline and brine-class groundwaters. (75 refs., 24 figs., 3 tabs.)

Vascular plants diversity of El Aribabi Conservation Ranch: A private natural protected area in northern Sonora, Mexico

Science.gov (United States)

J. Jesus Sanchez-Escalante; Denise Z. Avila-Jimenez; David A. Delgado-Zamora; Liliana Armenta-Cota; Thomas R. Van Devender; Ana Lilia. Reina-Guerrero

2013-01-01

In northeastern Sonora, isolated Sky Island mountain ranges with desertscrub, desert grassland, oak woodland, and pine-oak forest have high biodiversity. El Aribabi Conservation Ranch in the Sierra Azul (from 30°51’13”N, 110°41’9”W to 30°46’38”N, 110°32’3”W) was designated a Private Protected Natural Area by the Comisión Nacional de Áreas Naturales Protegidas in March...

Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

International Nuclear Information System (INIS)

Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

2012-01-01

Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

Determined Initial lead for South Of Isua (SOI) terrain suggests a single homogeneous source for it and possibly other archaean rocks

Science.gov (United States)

Tera, F.

2011-12-01

A Thorogenic-Uranogenic Lead Isotope Plane (TULIP), which entails plotting 206/208 (or its reverse) vs 207/208 (or its reverse), was applied to the Pb data on South of Isua (SOI) by Kamber et al., (1). When the data on 20 samples of these rocks and feldspars are plotted in pairs (each pair is a rock and its feldspar) on TULIP, they fall on 10 mixing lines that converge on a single spot (Fig. 1). This is the end member initial lead (EMIL). The 206/208 & 207/208 so determined are 0.3675 and 0.43525, respectively. From these values one calculates 207/206 = 1.1843 ± 0.0007, for EMIL. This pattern requires either: A) each pair has a singular kappa, K = 232Th/238U, different from others, or B) a pair's in situ decay Pb was homogenized in recent times. On 204/206 vs 207/206 diagram, the whole rocks of SOI define a 3.776 Ga isochron (2). From this and EMIL's 207/206, one obtains: 206/204 = 10.977, 207/204 = 12.974; and 208/204 = 29.756. This singularity of initial Pb contrasts with a deduced variability by the original authors (1). EMIL's radiogenic *(207/206) = 1.6220, gives a single-stage age = 5.9 Ga, indicating inapplicability of its evolution in one stage. Also, the μ calculated from 238U-206Pb for the single stage is different from that inferred from 235U-207Pb, confirming disqualification of this scenario. Reconciliation of the two decay schemes necessitates assumption of EMIL evolution in a minimum of two stages. Starting at 4.563 Ga, five scenarios were assumed: First stage ends and second starts at 4.55, 4.54, 4.53, 4.52 or 4.51 Ga. Second stages end at 3.776 Ga. The calculated μ1 for the first stage are 106, 59.5, 44.6, 36.3 and 30.9 respectively. For μ2 the change is limited, from 5.45 to 5.28. Only an average calculated K for both stages is possible. For the five outlined scenarios it ranges from 1.118 to 1.111. Earlier, Tera (3) observed that initial Pb of the oldest terrestrial reservoir requires evolution in two stages. There too μ1 >> μ2. Data on

Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

International Nuclear Information System (INIS)

Gong, Z.; Niu, Z.C.; Huang, S.S.; Fang, Z.D.; Sun, B.Q.; Xia, J.B.

2005-01-01

GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

International Nuclear Information System (INIS)

Shen, J; Cha, J J; Song, Y; Lee, M L

2014-01-01

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems. (paper)

Revision of Scheumann’s classification of melilitic lamprophyres and related melilitic rocks in light of new analytical data

Czech Academy of Sciences Publication Activity Database

Ulrych, Jaromír; Adamovič, Jiří; Krmíček, L.; Ackerman, Lukáš; Balogh, K.

2014-01-01

Roč. 59, č. 1 (2014), s. 3-22 ISSN 1802-6222 R&D Projects: GA AV ČR IAA300130902 Institutional support: RVO:67985831 Keywords : melilitic rocks * lamprophyres * polzenites * classification * geochemistry * Bohemian Massif Subject RIV: DB - Geology ; Mineralogy Impact factor: 1.405, year: 2014

Thermal Inertia of Rocks and Rock Populations

Science.gov (United States)

Golombek, M. P.; Jakosky, B. M.; Mellon, M. T.

2001-01-01

The effective thermal inertia of rock populations on Mars and Earth is derived from a model of effective inertia versus rock diameter. Results allow a parameterization of the effective rock inertia versus rock abundance and bulk and fine component inertia. Additional information is contained in the original extended abstract.

Automated monitoring and forecasting of rock fall danger in space and time: practical field experience

Czech Academy of Sciences Publication Activity Database

Zvelebil, J.; Nechyba, M.; Paluš, Milan

2008-01-01

Roč. 10, - (2008), A-04352 ISSN 1029-7006. [General Asembly of the European Geophysical Society. 13.04.2008-18.04.2008, Vienna] R&D Projects: GA AV ČR 1ET110190504 Institutional research plan: CEZ:AV0Z10300504 Keywords : fractal * scaling * unstable rock slope * collapse prediction * engineering geology Subject RIV: DG - Athmosphere Sciences, Meteorology

CL-imaging and ion microprobe dating of single zircons from a high-grade rock from the Central Zone, Limpopo Belt, South Africa: Evidence for a single metamorphic event at ˜2.0 Ga

Science.gov (United States)

Mouri, H.; Brandl, G.; Whitehouse, M.; de Waal, S.; Guiraud, M.

2008-02-01

The combination of ion microprobe dating and cathodoluminescence (CL) imaging of zircons from a high-grade rock from the Central Zone of the Limpopo Belt were used to constrain the age of metamorphic events in the area. Zircon grains extracted from an orthopyroxene-gedrite-bearing granulite were prepared for single crystal CL-imaging and ion microprobe dating. The grains display complex zoning when using SEM-based CL-imaging. A common feature in most grains is the presence of a distinct core with a broken oscillatory zoned structure, which clearly appears to be the remnant of an original grain of igneous origin. This core is overgrown by an unzoned thin rim measuring about 10-30 μm in diameter, which is considered as new zircon growth during a single metamorphic event. Selected domains of the zircon grains were analysed for U, Pb and Th isotopic composition using a CAMECA IMS 1270 ion microprobe (Nordsim facility). Most of the grains define a near-concordant cluster with some evidence of Pb loss. The most concordant ages of the cores yielded a weighted mean 207Pb/ 206Pb age of 2689 ± 15 (2 σ) Ma, interpreted as the age of the protolith of an igneous origin. The unzoned overgrowths of the zircon grains yielded a considerably younger weighted mean 207Pb/ 206Pb age of ˜2006.5 ± 8.0 Ma (2 σ), and these data are interpreted to reflect closely the age of the ubiquitous high-grade metamorphic event in the Central Zone. This study shows clearly, based on both the internal structure of the zircons and the data obtained by ion microprobe dating, that only a single metamorphic event is recorded by the studied 2.69 Ga old rocks, and we found no evidence of an earlier metamorphic event at ˜2.5 Ga as postulated earlier by some workers.

A comparison of some methods used to estimate the grazing capacity of a game ranch in Northern Province, South Africa

Directory of Open Access Journals (Sweden)

A.G. Schmidt

1995-08-01

Full Text Available The grazing capacity of a game ranch in Northern Province was estimated in a number of different ways using rainfall and herbaceous composition and phytomass data. The results indicate that the grazing capacity under the present environmental conditions should be approximately 50 of the recommended agricultural grazer stocking rate. This is in agreement with recent literature, indicating that the methods used should be suitable for determining a first approximation of grazing capacity in the mixed bushveld of Northern Province.

Potemkin Ranch : blending industrial buildings into their surrounding environments is a good idea that may yet catch on

International Nuclear Information System (INIS)

Stastny, P.

2006-01-01

The oil and gas industry is attempting to blend into their surroundings in order to improve relations with landowners. This article presented details of a 7.5 million-cubic-feet-per-day gas facility disguised as a cattleman's ranch through the use of convincing facades. The compressor unit is disguised as a ranch house, while the dehydration unit looks like a carriage house. Electrical controls are housed in a separate bunkhouse. In 2001, a skid-mounted refrigeration unit was added and enclosed in a barn facade. The total cost over and above a typical metal-clad gas facility was approximately $100,000, almost 4 per cent of the total facility cost of $2.5 million. While some companies have been using colour to camouflage facilities for many years, other companies have placed more importance on noise suppression, which can add 10 to 20 per cent to the cost of each building. In order to improve noise control, some facilities are now being constructed in topographical low spots with insulated enclosures and hospital-grade mufflers. Pioneer Canada has recently camouflaged a gas facility to mimic a farm which was subsequently fitted with standard noise attenuation. The company's new standard of noise reduction has resulted in additional costs of up to $200,000 per site. Landowners have commented favourably on Pioneer Canada's camouflage efforts. It was concluded that as land access becomes an even bigger issue in some plays, operators may increasingly use architectural features to make their facilities less obtrusive. 5 figs

Potemkin Ranch : blending industrial buildings into their surrounding environments is a good idea that may yet catch on

Energy Technology Data Exchange (ETDEWEB)

Stastny, P.

2006-09-15

The oil and gas industry is attempting to blend into their surroundings in order to improve relations with landowners. This article presented details of a 7.5 million-cubic-feet-per-day gas facility disguised as a cattleman's ranch through the use of convincing facades. The compressor unit is disguised as a ranch house, while the dehydration unit looks like a carriage house. Electrical controls are housed in a separate bunkhouse. In 2001, a skid-mounted refrigeration unit was added and enclosed in a barn facade. The total cost over and above a typical metal-clad gas facility was approximately $100,000, almost 4 per cent of the total facility cost of $2.5 million. While some companies have been using colour to camouflage facilities for many years, other companies have placed more importance on noise suppression, which can add 10 to 20 per cent to the cost of each building. In order to improve noise control, some facilities are now being constructed in topographical low spots with insulated enclosures and hospital-grade mufflers. Pioneer Canada has recently camouflaged a gas facility to mimic a farm which was subsequently fitted with standard noise attenuation. The company's new standard of noise reduction has resulted in additional costs of up to $200,000 per site. Landowners have commented favourably on Pioneer Canada's camouflage efforts. It was concluded that as land access becomes an even bigger issue in some plays, operators may increasingly use architectural features to make their facilities less obtrusive. 5 figs.

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

Energy Technology Data Exchange (ETDEWEB)

Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

2010-12-15

Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Science.gov (United States)

Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

2017-07-25

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

Application of alternative methods for determination of rock quality designation (RQD) index: a case study from the Rožná I uranium mine, Strážek Moldanubicum, Bohemian Massif, Czech Republic

Czech Academy of Sciences Publication Activity Database

Vavro, Martin; Souček, Kamil; Staš, Lubomír; Waclawik, Petr; Vavro, Leona; Koníček, Petr; Ptáček, Jiří

2015-01-01

Roč. 52, č. 10 (2015), s. 1466-1476 ISSN 0008-3674. [International Colloquium on Geomechanics and Geophysics /5./. Karolinka, 25.06.2014-27.06.2014] R&D Projects: GA MŠk ED2.1.00/03.0082; GA MŠk(CZ) LO1406 Institutional support: RVO:68145535 Keywords : rock quality designation (RQD) index * geotechnical monitoring * borehole–wall imaging * structural mapping * rock mass fracturing Subject RIV: DH - Mining, incl. Coal Mining Impact factor: 1.877, year: 2015 http://www.nrcresearchpress.com/doi/pdf/10.1139/cgj-2014-0377

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2006-01-01

This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

Research on Environmental Adjustment of Cloud Ranch Based on BP Neural Network PID Control

Science.gov (United States)

Ren, Jinzhi; Xiang, Wei; Zhao, Lin; Wu, Jianbo; Huang, Lianzhen; Tu, Qinggang; Zhao, Heming

2018-01-01

In order to make the intelligent ranch management mode replace the traditional artificial one gradually, this paper proposes a pasture environment control system based on cloud server, and puts forward the PID control algorithm based on BP neural network to control temperature and humidity better in the pasture environment. First, to model the temperature and humidity (controlled object) of the pasture, we can get the transfer function. Then the traditional PID control algorithm and the PID one based on BP neural network are applied to the transfer function. The obtained step tracking curves can be seen that the PID controller based on BP neural network has obvious superiority in adjusting time and error, etc. This algorithm, calculating reasonable control parameters of the temperature and humidity to control environment, can be better used in the cloud service platform.

The dynamical interactions of Amazon deforestation, intensification of cattle ranching and technology adoption: insights from a socio-ecological model

Science.gov (United States)

Müller-Hansen, Finn; Heitzig, Jobst; Donges, Jonathan F.; Cardoso, Manoel F.; Kurths, Jürgen; Thonicke, Kirsten

2017-04-01

Deforestation in the tropics - with vast consequences for the ecosystem and climate - is mainly driven by subsequent land use, which is not only determined by environmental and economic constraints but also influenced by the use of different production technologies. Inefficient production technologies can lead to excessive use of land, especially in areas where land is easily available and accessible. Here, the adoption of new technologies could help to use already converted land more intensively and ease pressures on ecologically valuable areas. In this study, we take the Brazilian Amazon as a prominent example region to explore the interplay of land-use decisions with environmental and economic dynamics in the process of land-use intensification and frontier expansion. Expansion of pasture land for cattle ranching to satisfy increasing domestic and international demands is one of the important drivers for deforestation in the Brazilian Amazon. Pasture run-down and following land abandonment further drive the expansion of deforestation frontiers into pristine forests. Therefore, intensification of livestock production, especially better pasture management, could potentially reduce deforestation. However, a number of reasons including the large spatial extent of the region make the process of comparing the effectiveness of different management techniques, technologies and policies in the region difficult. Therefore, the effectiveness and possible outcomes of policies to foster intensification are highly debated in the literature. Some authors deny that intensification policies are a viable option to spare forests as long as they are not a scarce resource [1] while others insist that intensification has an effect if only supported by the right policies [2]. In this presentation, we introduce a concise agent-based model to study conditions under which intensification can reduce deforestation and explore the trade-offs between intensified and extensive land uses

Provenance and tectonic setting of siliciclastic rocks associated with the Neoproterozoic Dahongliutan BIF: Implications for the Precambrian crustal evolution of the Western Kunlun orogenic belt, NW China

Science.gov (United States)

Hu, Jun; Wang, He; Wang, Min

2017-10-01

The Late Neoproterozoic Dahongliutan BIF is associated with siliciclastic rocks in the Tianshuihai terrane of the Western Kunlun orogenic belt (WKO), NW China. The sedimentary rocks have various weathering indices (e.g., CIA = 57-87, PIA = 61-96 and Th/U = 4.85-12.45), indicative of varying degrees of weathering in the source area. The rocks have trace element ratios, such as Th/Sc = 0.60-1.21 and Co/Th = 0.29-1.67, and light rare earth element (LREE) enriched chondrite-normalized REE patterns, suggesting that they were mainly sourced from intermediate and felsic rocks. Available U-Pb ages of detrital zircon from these rocks reveal that the detrital sources may have been igneous and metamorphic rocks from the WKO and the Tarim Block. Our study suggests that the Dahongliutan BIF and hosting siliciclastic rocks may have deposited in a setting transitional from a passive to active continental margin, probably related to the Late Neoproterozoic-Early Cambrian seafloor spreading and subduction of the Proto-Tethys Ocean. U-Pb dating of 163 detrital zircons defines five major age populations at 2561-2329 Ma, 2076-1644 Ma, 1164-899 Ma, 869-722 Ma and 696-593 Ma. These age groups broadly correspond to the major stages of supercontinent assembly and breakup events widely accepted for Columbia, Rodinia and Gondwana. Some zircons have TDM2 model ages of 3.9-1.8 Ga and negative εHf(t) values, suggesting that the Archean to Paleoproterozoic (as old as Eoarchean) crustal materials were episodically reworked and incorporated into the late magmatic process in the WKO. Some Neoproterozoic zircons have TDM2 model ages of 1.47-1.07 Ga and 1.81-1.53 Ga and positive εHf(t) values, indicating juvenile crustal growth during the Mesoproterozoic. Our new results, combined with published data, imply that both the Tianshuihai terrane in the WKO and the Tarim Block share the same Precambrian tectonic evolution history.

ARSENIC REMOVAL FROM DRINKING WATER BY POINT-OF-USE (POU) REVERSE OSMOSIS. U.S. EPA DEMONSTRATION PROJECT AT SUNSET RANCH DEVELOPMENT IN HOMEDALE, ID. FINAL PERFORMANCE EVALUATION REPORT

Science.gov (United States)

This report documents the activities performed during and the results obtained from the arsenic removal technology demonstration project at the Sunset Ranch Development in Homedale, ID. The objectives of the project are to evaluate: 1) the effectiveness of a point of use (POU) re...

Rock pushing and sampling under rocks on Mars

Science.gov (United States)

Moore, H.J.; Liebes, S.; Crouch, D.S.; Clark, L.V.

1978-01-01

Viking Lander 2 acquired samples on Mars from beneath two rocks, where living organisms and organic molecules would be protected from ultraviolet radiation. Selection of rocks to be moved was based on scientific and engineering considerations, including rock size, rock shape, burial depth, and location in a sample field. Rock locations and topography were established using the computerized interactive video-stereophotogrammetric system and plotted on vertical profiles and in plan view. Sampler commands were developed and tested on Earth using a full-size lander and surface mock-up. The use of power by the sampler motor correlates with rock movements, which were by plowing, skidding, and rolling. Provenance of the samples was determined by measurements and interpretation of pictures and positions of the sampler arm. Analytical results demonstrate that the samples were, in fact, from beneath the rocks. Results from the Gas Chromatograph-Mass Spectrometer of the Molecular Analysis experiment and the Gas Exchange instrument of the Biology experiment indicate that more adsorbed(?) water occurs in samples under rocks than in samples exposed to the sun. This is consistent with terrestrial arid environments, where more moisture occurs in near-surface soil un- der rocks than in surrounding soil because the net heat flow is toward the soil beneath the rock and the rock cap inhibits evaporation. Inorganic analyses show that samples of soil from under the rocks have significantly less iron than soil exposed to the sun. The scientific significance of analyses of samples under the rocks is only partly evaluated, but some facts are clear. Detectable quantities of martian organic molecules were not found in the sample from under a rock by the Molecular Analysis experiment. The Biology experiments did not find definitive evidence for Earth-like living organisms in their sample. Significant amounts of adsorbed water may be present in the martian regolith. The response of the soil

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

Science.gov (United States)

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

International Nuclear Information System (INIS)

Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

2006-01-01

We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

International Nuclear Information System (INIS)

Chen, Yen-Liang; Lo, Ikai; Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi; Tsai, Jenn-Kai; Schuber, Ralf; Schaadt, Daniel

2012-01-01

We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69″ to 59.43″ for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 × 5 μm 2 with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: ► The samples were grown by plasma-assisted molecular beam epitaxy. ► The GaN epilayer was grown on sapphire substrate. ► The samples were characterized by X-ray diffraction and atomic force microscopy. ► The sample quality was improved by gradient buffer layer.

2.9-1.9 Ga paleoalterations of Archean granitic basement of the Franceville basin (Gabon)

Science.gov (United States)

Mouélé, Idalina Moubiya; Dudoignon, Patrick; El Albani, Abderrazak; Meunier, Alain; Boulvais, Philippe; Gauthier-Lafaye, François; Paquette, Jean-Louis; Martin, Hervé; Cuney, Michel

2014-09-01

The Archean granitoids in the Kiéné area, Gabon, are overlained by the Paleoproterozoic sediments of the Franceville basin (2.1 Ga). The basin is known for its high-grade uranium deposits among which some have been forming natural nuclear fission reactors. Most of the studies were dedicated to the FA-FB Paleoproterozoic sediments hosting these uranium deposits. Little is known on the Archean basement itself and specifically on the hydrous alteration events it experienced before and after the sediment deposition. The present work is focused on their petrographical, mineralogical and geochemical characterization. Dating the successive alteration events has been attempted on altered monazite crystals. Rocks in different alteration states have been sampled from eight drill cores crosscutting the Archean - Paleoproterozoic unconformity. The Archean granitoids observed in the deepest levels exhibit typical petrographical features of a propylitic alteration while they are intensely illitized up to the unconformity. The propylitic alteration is mainly pervasive but the original texture of the granitoïds is conserved in spite of the formation of new minerals: Mg-chlorite, allanite and epidote forming a typical paragenesis. The illitic alteration is much more invasive near the unconformity. The illitization process leads to the replacement of feldspars and the corrosion of quartz crysals by an illitic matrix while the ferromagnesian minerals are pseudomorphosed by a Fe-chlorite + phengite + hematite assemblage. The final fluid-rock interaction step is marked by fissural deposits of calcite and anhydrite. The δ13C isotopic data show that the fissural carbonates precipitated from diagenetic fluids enriched carbon products deriving from the maturation of organic matter. The U-Pb isotopic analyzes performed on monazite crystals have dated three distinct events: 3.0-2.9 Ga (magmatic), 2.6 Ga (propylitic alteration) and 1.9 Ga (diagenetic illitization). The calculation of

Preservation of an Archaean whole rock Re-Os isochron for the Venetia lithospheric mantle: Evidence for rapid crustal recycling and lithosphere stabilisation at 3.3 Ga

Science.gov (United States)

van der Meer, Quinten H. A.; Klaver, Martijn; Reisberg, Laurie; Riches, Amy J. V.; Davies, Gareth R.

2017-11-01

the formation and subsequent evolution of Venetia lithosphere. First, melt depletion and remobilisation of Re and Os must have occurred within error of the 3.28 Ga mean TMA age. Second, the refractory peridotites contain significant Re despite recording >40 % melt extraction. Third, assuming that Si-enrichment and Re-Os mobility in the Venetia lithospheric mantle were linked, this process must have occurred within ∼100 Myr of initial melt depletion in order to preserve the isochronous relationship. Based on the regional geological evolution, we propose a rapid recycling model with initial melt depletion at ∼3.35 Ga to form a tholeiitic mafic crust that is recycled at ∼3.28 Ga, resulting in the intrusion of a TTG suite and Si-enrichment of the lithospheric mantle. The non-zero primary Re contents of the Venetia xenoliths imply that TRD model ages significantly underestimate the true depletion age even for highly depleted peridotites. The overlap of the ∼2.6 Ga TRD ages with the time of the Kaapvaal-Limpopo collision is purely fortuitous and has no geological significance. Hence, this study underlines the importance of scrutiny if age information is to be derived from whole rock Re-Os analyses.

Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

International Nuclear Information System (INIS)

Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Koehler, K.; Johs, B.

2000-01-01

Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, Al x Ga 1-x N (x le 0.16), and In 0.13 Ga 0.87 N were deduced. Further, the dependence of the Al x Ga 1-x N band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the Al x Ga 1-x N gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

International Nuclear Information System (INIS)

Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

2000-01-01

We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

The oxygen isotope composition of earth's oldest rocks and evidence of a terrestrial magma ocean

DEFF Research Database (Denmark)

Rumble, D.; Bowring, S.; Iizuka, T.

2013-01-01

Analysis of Hadean and Archean rocks for O-16-O-17-O-18 isotopes demonstrates that the Terrestrial Mass Fractionation Line of oxygen isotopes has had the same slope and intercept for at least the past 4.0 and probably for as long as 4.2Ga. The homogenization of oxygen isotopes required to produce....... But other sources of heat for global melting cannot be excluded such as bolide impacts during early accretion of proto-Earth, the decay of short-lived radioactive isotopes, or the energy released during segregation of core from mantle.......Analysis of Hadean and Archean rocks for O-16-O-17-O-18 isotopes demonstrates that the Terrestrial Mass Fractionation Line of oxygen isotopes has had the same slope and intercept for at least the past 4.0 and probably for as long as 4.2Ga. The homogenization of oxygen isotopes required to produce...... such long-lived consistency was most easily established by mixing in a terrestrial magma ocean. The measured identical oxygen isotope mass fractionation lines for Earth and Moon suggest that oxygen isotope reservoirs of both bodies were homogenized at the same time during a giant moon-forming impact...

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-01-01

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-06-15

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

International Nuclear Information System (INIS)

Liu, H F; Chi, D Z; Liu, W; Guo, S

2016-01-01

High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal–organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [–4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al 2 O 3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings. (paper)

Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

Science.gov (United States)

Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

2016-03-01

High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

Estimating the Wet-Rock P-Wave Velocity from the Dry-Rock P-Wave Velocity for Pyroclastic Rocks

Science.gov (United States)

Kahraman, Sair; Fener, Mustafa; Kilic, Cumhur Ozcan

2017-07-01

Seismic methods are widely used for the geotechnical investigations in volcanic areas or for the determination of the engineering properties of pyroclastic rocks in laboratory. Therefore, developing a relation between the wet- and dry-rock P-wave velocities will be helpful for engineers when evaluating the formation characteristics of pyroclastic rocks. To investigate the predictability of the wet-rock P-wave velocity from the dry-rock P-wave velocity for pyroclastic rocks P-wave velocity measurements were conducted on 27 different pyroclastic rocks. In addition, dry-rock S-wave velocity measurements were conducted. The test results were modeled using Gassmann's and Wood's theories and it was seen that estimates for saturated P-wave velocity from the theories fit well measured data. For samples having values of less and greater than 20%, practical equations were derived for reliably estimating wet-rock P-wave velocity as function of dry-rock P-wave velocity.

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Ploch, Simon [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hoffmann, Veit; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2011-03-15

GaN layers on bulk m-plane, (11 anti 22), (10 anti 12) and (10 anti 11) GaN substrates were grown by metal organic vapor phase epitaxy. XRD rocking curves have a FWHM of less than 150'', indicating excellent crystalline quality. However in many cases surface morphology exhibits hillocks with a height of 1-2 {mu}m and a lateral extension of 50-200 {mu}m whereas a smooth surface would be desirable for optoelectronic devices. The influence of growth parameters on the surface morphology was studied. The goal was, to constrain the material redistribution, that is necessary to form large hillocks. This was achieved by lowering the adatom diffusion length by a reduction of temperature and an increased reactor pressure. In the case of the (10 anti 11) and (10 anti 12) semipolar planes a reduction of the adatom diffusion length leads to a reduction of hillock density, hillock size and a smoother surface between hillocks. However, the m-plane surface does not react to a reduction of adatom mobility. Even at 890 C and 400 mbar rectangular pyramids cover the surface. In contrast to the other planes, the (11 anti 22) becomes instable, when the adatom diffusion length is reduced. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Toward the understanding of annealing effects on (GaIn)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

2015-01-01

(GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Two new Np--Ga phases: α-NpGa2 and metastable m-NpGa2

International Nuclear Information System (INIS)

Giessen, B.C.; Elliott, R.O.

1976-01-01

Following an earlier study of metastable Np-rich Np--Ga alloys, rapidly quenched Np--Ga alloys with 63 to 80 at. pct. Ga were prepared and studied. Two new NpGa 2 phases, both with an AlB 2 type structure, were found: α-NpGa 2 , with a = 4.246A, c = 4.060A, c/a = 0.956, and m-NpGa 2 , with a = 4.412A, c = 3.642A, c/a = 0.825. While m-NpGa 2 was observed only in very fast quenched (splat cooled) samples and appears to be metastable, α-NpGa 2 is probably an equilibrium phase. In a splat cooled alloy with 75 at. pct. Ga, another, unidentified, metastable phase was observed. Crystal chemical discussions of atomic volumes, interatomic distances and axial ratios are given; the volume difference between the two forms of NpGa 2 is correlated with a valence change of Np

'Escher' Rock

Science.gov (United States)

2004-01-01

[figure removed for brevity, see original site] Chemical Changes in 'Endurance' Rocks [figure removed for brevity, see original site] Figure 1 This false-color image taken by NASA's Mars Exploration Rover Opportunity shows a rock dubbed 'Escher' on the southwestern slopes of 'Endurance Crater.' Scientists believe the rock's fractures, which divide the surface into polygons, may have been formed by one of several processes. They may have been caused by the impact that created Endurance Crater, or they might have arisen when water leftover from the rock's formation dried up. A third possibility is that much later, after the rock was formed, and after the crater was created, the rock became wet once again, then dried up and developed cracks. Opportunity has spent the last 14 sols investigating Escher, specifically the target dubbed 'Kirchner,' and other similar rocks with its scientific instruments. This image was taken on sol 208 (Aug. 24, 2004) by the rover's panoramic camera, using the 750-, 530- and 430-nanometer filters. The graph above shows that rocks located deeper into 'Endurance Crater' are chemically altered to a greater degree than rocks located higher up. This chemical alteration is believed to result from exposure to water. Specifically, the graph compares ratios of chemicals between the deep rock dubbed 'Escher,' and the more shallow rock called 'Virginia,' before (red and blue lines) and after (green line) the Mars Exploration Rover Opportunity drilled into the rocks. As the red and blue lines indicate, Escher's levels of chlorine relative to Virginia's went up, and sulfur down, before the rover dug a hole into the rocks. This implies that the surface of Escher has been chemically altered to a greater extent than the surface of Virginia. Scientists are still investigating the role water played in influencing this trend. These data were taken by the rover's alpha particle X-ray spectrometer.

Coexistence of enriched and modern-like 142Nd signatures in Archean igneous rocks of the eastern Kaapvaal Craton, southern Africa

Science.gov (United States)

Schneider, Kathrin P.; Hoffmann, J. Elis; Boyet, Maud; Münker, Carsten; Kröner, Alfred

2018-04-01

The short-lived 146Sm-142Nd isotope system is an important tool for tracing Hadean crust-mantle differentiation processes and constraining their imprint on much younger rocks from Archean cratons. We report the first comprehensive set of high-precision 142Nd analyses for granitoids and amphibolites of the Ancient Gneiss Complex (AGC; Swaziland) and the oldest metavolcanic units of the Barberton Greenstone Belt (BGB; South Africa). The investigated samples span an age range from 3.66 Ga to 3.22 Ga and are representative of major geological units of the AGC and the lower Onverwacht Group of the BGB. Measured samples yielded μ142Nd values in the range from -8 ppm to +3 ppm relative to the JNdi-1 terrestrial standard, with typical errors smaller than 4.4 ppm. The distribution of the μ142Nd values for these 17 measured samples is bimodal with ten samples showing a tendency towards slightly negative μ142Nd anomalies, whereas seven samples have 142Nd similar to the terrestrial reference. The only confidently resolvable μ142Nd anomalies were found in a 3.44 Ga Ngwane Gneiss sample and in amphibolites of the ca. 3.45 Ga Dwalile Greenstone Remnant, revealing μ142Nd values ranging from - 7.9 ± 4.4 to - 6.1 ± 4.3 ppm. The μ142Nd deficits do not correlate with age, lithological unit, or sample locality. Instead, our results reveal that two distinct mantle domains were involved in the formation of the AGC crust. The two reservoirs can be distinguished by their μ142Nd signatures. Mantle-derived rocks tapped the enriched reservoir with negative μ142Nd at least until 3.46 Ga, whereas the granitoids preserved a negative μ142Nd signature that formed by incorporation of older AGC crust at least until 3.22 Ga. The oldest gneisses with no μ142Nd anomaly are up to 3.64 Ga in age, indicating that a modern terrestrial 142Nd reservoir was already present by early Archean times.

Paleoproterozoic (ca. 1.8 Ga) arc magmatism in the Lützow-Holm Complex, East Antarctica: Implications for crustal growth and terrane assembly in erstwhile Gondwana fragments

Science.gov (United States)

Takahashi, Kazuki; Tsunogae, Toshiaki; Santosh, M.; Takamura, Yusuke; Tsutsumi, Yukiyasu

2018-05-01

The Lützow-Holm Complex (LHC) of East Antarctica forms a part of the latest Neoproterozoic-Cambrian high-grade metamorphic segment of the East African-Antarctic Orogen. Here we present new petrological, geochemical, and zircon U-Pb geochronological data on meta-igneous rocks from four localities (Austhovde, Telen, Skallevikshalsen, and Skallen) in the LHC, and evaluate the regional Paleoproterozoic (ca. 1.8 Ga) arc magmatism in this terrane for the first time. The geochemical features reveal a volcanic-arc affinity for most of the meta-igneous rocks from Austhovde and Telen, suggesting that the protoliths of these rocks were derived from felsic to mafic arc magmatic rocks. The protoliths of two mafic granulites from Austhovde are inferred as non-volcanic-arc basalt such as E-MORB, suggesting the accretion of remnant oceanic lithosphere together with the volcanic-arc components during the subduction-collision events. The weighted mean 206Pb/238U ages of the dominant population of magmatic zircons in felsic orthogneisses from Austhovde and Telen show 1819 ± 19 Ma and 1830 ± 10 Ma, respectively, corresponding to Paleoproterozoic magmatic event. The magmatic zircons in orthogneisses from other two localities yield upper intercept ages of 1837 ± 54 Ma (Skallevikshalsen), and 1856 ± 37 Ma and 1854 ± 45 Ma (Skallen), which also support Paleoproterozoic magmatism. The earlier thermal events during Neoarchean to Early Paleoproterozoic are also traced by 206Pb/238U ages of xenocrystic zircons in the felsic orthogneisses from Austhovde (2517 ± 17 Ma and 2495 ± 15 Ma) and Telen (2126 ± 16 Ma), suggesting partial reworking of the basement of a 2.5 Ga microcontinent during ca. 1.8 Ga continental-arc magmatism. The timing of peak metamorphism is inferred to be in the range of 645.6 ± 10.4 to 521.4 ± 12.0 Ma based on 206Pb/238U weighted mean ages of metamorphic zircon grains. The results of this study, together with the available magmatic ages as well as geophysical and

Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Chen, Yen-Liang [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Tsai, Jenn-Kai [Department of Electronics Engineering, National Formosa University, Hu-Wei, Yun-Lin County 63208, Taiwan, ROC (China); Schuber, Ralf; Schaadt, Daniel [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

2012-07-31

We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69 Double-Prime to 59.43 Double-Prime for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 Multiplication-Sign 5 {mu}m{sup 2} with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: Black-Right-Pointing-Pointer The samples were grown by plasma-assisted molecular beam epitaxy. Black-Right-Pointing-Pointer The GaN epilayer was grown on sapphire substrate. Black-Right-Pointing-Pointer The samples were characterized by X-ray diffraction and atomic force microscopy. Black-Right-Pointing-Pointer The sample quality was improved by gradient buffer layer.

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure

International Nuclear Information System (INIS)

Chen, J.Y.; Chen, B.H.; Huang, Y.S.; Chin, Y.C.; Tsai, H.S.; Lin, H.H.; Tiong, K.K.

2013-01-01

Interfacial characteristics of GaAs/GaAs 0.64 P 0.19 Sb 0.17 GaAs heterostructures and emission properties of a quaternary GaAs 0.64 P 0.19 Sb 0.17 layer were studied by excitation-power- and temperature-dependent photoluminescence (PL) measurements. The GaAs-to-GaAsPSb upper interface related emission feature and signals from GaAsPSb and GaAs were observed and characterized. The upper interface related emission peak was attributed to the radiative recombination of spatially separated electron–hole pairs and suggesting the type-II alignment at the GaAs/GaAsPSb interface. The localized excitonic emission feature of GaAsPSb revealed a blueshift due to the saturation effect of localized states and showed a fast thermal-quench with the increase of temperature. The temperature variation of the band edge emission signal of GaAsPSb was found to follow that of GaAs closely. -- Highlights: ► PL characterization of GaAs/GaAsPSb/GaAs heterostructure. ► Type-II alignment at the GaAs/GaAsPSb interface. ► Near-band-edge emission lines of GaAsPSb

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Science.gov (United States)

Chang, Hung-Ming; Lai, Wei-Chih; Chen, Wei-Shou; Chang, Shoou-Jinn

2015-04-06

We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power. Similar to conventional UV LEDs with AlGaN/InGaN MQWs, UV LEDs with AlN/GaN/InGaN MQWs have forward voltages (V(f)'s) ranging from 3.21 V to 3.29 V at 350 mA. Each emission peak wavelength of AlN/GaN/InGaN MQW UV LEDs presents 350 mA output power greater than that of the corresponding emission peak wavelength of AlGaN/InGaN MQW UV LEDs. The light output power at 350mA of AlN/GaN/InGaN MQWs UV LEDs with 375 nm emission wavelength can reach around 26.7% light output power enhancement in magnitude compared to the AlGaN/InGaN MQWs UV LEDs with same emission wavelength. But 350mA light output power of AlN/GaN/InGaN MQWs UV LEDs with emission wavelength of 395nm could only have light output power enhancement of 2.43% in magnitude compared with the same emission wavelength AlGaN/InGaN MQWs UV LEDs. Moreover, AlN/GaN/InGaN MQWs present better InGaN thickness uniformity, well/barrier interface quality and less large size pits than AlGaN/InGaN MQWs, causing AlN/GaN/InGaN MQW UV LEDs to have less reverse leakage currents at -20 V. Furthermore, AlN/GaN/InGaN MQW UV LEDs have the 2-kV human body mode (HBM) electrostatic discharge (ESD) pass yield of 85%, which is 15% more than the 2-kV HBM ESD pass yield of AlGaN/InGaN MQW UV LEDs of 70%.

Regional assessments of the hydrocarbon generation potential of selected North American proterozoic rock sequences. Progress report, September 1989--April 1990

Energy Technology Data Exchange (ETDEWEB)

Engel, M.H.; Elmore, R.D.

1990-04-01

Our primary research objectives for the first year of this grant are nearing completion. This includes comprehensive sedimentologic/organic geochemical studies of two depositionally distinct, unmetamorphosed units, the Nonesuch Formation ({approximately}1.1 Ga lacustrine rift deposit) and the Dripping Spring Quartzite ({approximately}1.3 Ga marine shelf deposit). As discussed in this progress report, an attempt has been made to (1) identify source rocks by quantification and characterization of constituent organic matter, (2) recognize depositional/diagenetic/catagenetic factors that may have influenced source rock quality and (3) evaluate the possibility of previous or current hydrocarbon generation and migration. Organic petrology and geochemical analyses suggest important differences between kerogens in the Michigan (MI) and Wisconsin (WI) Nonesuch Formation study areas. When considered within a geographic/stratigraphic framework, the Nonesuch Formation in the MI study area exhibits superior source rock potential. It is suggested that sedimentary organic matter in the WI area was subject to more extensive microbial alteration during early diagenesis. It is also possible that thermal maturity levels were slightly to moderately higher in WI than MI. Petrologic evidence for migrated bitumens and the stable isotope composition of late vein carbonates suggest, furthermore, that oil generation and migration may have actually been more extensive in the WI study area.

Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

Science.gov (United States)

Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

2003-05-01

Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Science.gov (United States)

Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

1996-09-01

This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

International Nuclear Information System (INIS)

Ding Jieqin; Wang Xiaoliang; Xiao Hongling; Wang Cuimei; Yin Haibo; Chen Hong; Feng Chun; Jiang Lijuan

2012-01-01

Highlights: ► We present calculations of carrier confinement characteristics. ► An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier density in designed heterostructure is greatly increased. ► Interface roughness and alloy disorder scattering reduced. ► Carrier mobility will be improved in designed heterostructure. - Abstract: We present calculations of carrier confinement characteristics in (Al y Ga 1−y N/AlN)SLs/GaN/(In x Ga 1−x N/GaN)MQW/GaN heterojunction structure in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made firstly including thickness of GaN channel, InGaN, and indium composition of In x Ga 1−x N in order to increase carrier density and mobility, and the influence of pairs of AlGaN/AlN superlattices (SLs) and InGaN/GaN MQWs on structure was discussed. Theoretical calculations clearly indicate that the two-dimensional electron gas (2DEG) sheet carrier density in designed heterostructure is greatly increased due to the enhancing of carrier confinement compared to those in conventional AlGaN/GaN one at the similar Al composition. Furthermore, the calculated carrier distribution shows that carrier mobility will be improved by reducing interface roughness and alloy disorder scattering in designed heterostructure.

AlGaN/GaN double-channel HEMT

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

2010-01-01

The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

Rock fragmentation

Energy Technology Data Exchange (ETDEWEB)

Brown, W.S.; Green, S.J.; Hakala, W.W.; Hustrulid, W.A.; Maurer, W.C. (eds.)

1976-01-01

Experts in rock mechanics, mining, excavation, drilling, tunneling and use of underground space met to discuss the relative merits of a wide variety of rock fragmentation schemes. Information is presented on novel rock fracturing techniques; tunneling using electron beams, thermocorer, electric spark drills, water jets, and diamond drills; and rock fracturing research needs for mining and underground construction. (LCL)

77 FR 12878 - National Register of Historic Places; Notification of Pending Nominations and Related Actions

Science.gov (United States)

2012-03-02

... County MPS), 23531 Cty. Rd. J.2, San Francisco, 12000144 Montezuma County Indian Camp Ranch Archeological... mi. E. of Cortez on US 160, Cortez, 12000146 Montrose County Shavano Valley Rock Art Site (Boundary...., Hernando, 12000153 Hinds County Municipal Art Gallery, 839 N. State St., Jackson, 12000154 Washington...

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.

2013-10-02

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

Naturally occurring Influenza A virus subtype H1N2 infection in a Midwest United States mink (Mustela vison) ranch.

Science.gov (United States)

Yoon, Kyoung-Jin; Schwartz, Kent; Sun, Dong; Zhang, Jianqiang; Hildebrandt, Hugh

2012-03-01

Influenza A virus (FLUAV) causes acute respiratory disease in humans and a variety of animal species. The virus tends to remain within the species of origin; nonetheless, naturally occurring cross-species transmission of FLUAV has been periodically documented. Multiple cross-species transmissions of FLUAV have been reported from companion animals and captive wild animals, neither of which is historically considered as natural hosts of FLUAV. In the fall of 2010, mink (Mustela vison) inhabiting a 15,000-head mink farm in the Midwest United States experienced persistent severe respiratory distress and nose and/or mouth bleeding. Mink losses averaged approximately 10 animals per day. Six dead mink at 6 months of age were submitted to the Iowa State University Veterinary Diagnostic Laboratory for diagnostic investigation. Gross and microscopic examinations revealed that all 6 mink had hemorrhagic bronchointerstitial pneumonia. Hemolytic Escherichia coli was isolated from lungs, probably accounting for hemorrhagic pneumonia. All animals tested negative for Canine distemper virus and Aleutian mink disease virus. Interestingly, FLUAV of H1N2 subtype, which contained the matrix gene of swine lineage, was detected in the lungs. Serological follow-up on mink that remained in the ranch until pelting also confirmed that the ranch had been exposed to FLUAV of H1 subtype (δ clade). The case study suggests that FLUAV should be included in the differential diagnosis when mink experience epidemics of respiratory disease. Since the source of FLUAV appeared to be uncooked turkey meat, feeding animals fully cooked ration should be considered as a preventive measure.

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-12-01

This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Science.gov (United States)

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Determination of the mechanical parameters of rock mass based on a GSI system and displacement back analysis

Science.gov (United States)

Kang, Kwang-Song; Hu, Nai-Lian; Sin, Chung-Sik; Rim, Song-Ho; Han, Eun-Cheol; Kim, Chol-Nam

2017-08-01

It is very important to obtain the mechanical paramerters of rock mass for excavation design, support design, slope design and stability analysis of the underground structure. In order to estimate the mechanical parameters of rock mass exactly, a new method of combining a geological strength index (GSI) system with intelligent displacment back analysis is proposed in this paper. Firstly, average spacing of joints (d) and rock mass block rating (RBR, a new quantitative factor), surface condition rating (SCR) and joint condition factor (J c) are obtained on in situ rock masses using the scanline method, and the GSI values of rock masses are obtained from a new quantitative GSI chart. A correction method of GSI value is newly introduced by considering the influence of joint orientation and groundwater on rock mass mechanical properties, and then value ranges of rock mass mechanical parameters are chosen by the Hoek-Brown failure criterion. Secondly, on the basis of the measurement result of vault settlements and horizontal convergence displacements of an in situ tunnel, optimal parameters are estimated by combination of genetic algorithm (GA) and numerical simulation analysis using FLAC3D. This method has been applied in a lead-zinc mine. By utilizing the improved GSI quantization, correction method and displacement back analysis, the mechanical parameters of the ore body, hanging wall and footwall rock mass were determined, so that reliable foundations were provided for mining design and stability analysis.

Pervasive remagnetization of detrital zircon host rocks in the Jack Hills, Western Australia and implications for records of the early geodynamo

Science.gov (United States)

Weiss, Benjamin P.; Maloof, Adam C.; Tailby, Nicholas; Ramezani, Jahandar; Fu, Roger R.; Hanus, Veronica; Trail, Dustin; Bruce Watson, E.; Harrison, T. Mark; Bowring, Samuel A.; Kirschvink, Joseph L.; Swanson-Hysell, Nicholas L.; Coe, Robert S.

2015-11-01

It currently is unknown when Earth's dynamo magnetic field originated. Paleomagnetic studies indicate that a field with an intensity similar to that of the present day existed 3.5 billion years ago (Ga). Detrital zircon crystals found in the Jack Hills of Western Australia are some of the very few samples known to substantially predate this time. With crystallization ages ranging from 3.0-4.38 Ga, these zircons might preserve a record of the missing first billion years of Earth's magnetic field history. However, a key unknown is the age and origin of magnetization in the Jack Hills zircons. The identification of >3.9 Ga (i.e., Hadean) field records requires first establishing that the zircons have avoided remagnetization since being deposited in quartz-rich conglomerates at 2.65-3.05 Ga. To address this issue, we have conducted paleomagnetic conglomerate, baked contact, and fold tests in combination with U-Pb geochronology to establish the timing of the metamorphic and alteration events and the peak temperatures experienced by the zircon host rocks. These tests include the first conglomerate test directly on the Hadean-zircon bearing conglomerate at Erawandoo Hill. Although we observed little evidence for remagnetization by recent lightning strikes, we found that the Hadean zircon-bearing rocks and surrounding region have been pervasively remagnetized, with the final major overprinting likely due to thermal and/or aqueous effects from the emplacement of the Warakurna large igneous province at ∼1070 million years ago (Ma). Although localized regions of the Jack Hills might have escaped complete remagnetization, there currently is no robust evidence for pre-depositional (>3.0 Ga) magnetization in the Jack Hills detrital zircons.

Rock mechanics for hard rock nuclear waste repositories

International Nuclear Information System (INIS)

Heuze, F.E.

1981-09-01

The mined geologic burial of high level nuclear waste is now the favored option for disposal. The US National Waste Terminal Storage Program designed to achieve this disposal includes an extensive rock mechanics component related to the design of the wastes repositories. The plan currently considers five candidate rock types. This paper deals with the three hard rocks among them: basalt, granite, and tuff. Their behavior is governed by geological discontinuities. Salt and shale, which exhibit behavior closer to that of a continuum, are not considered here. This paper discusses both the generic rock mechanics R and D, which are required for repository design, as well as examples of projects related to hard rock waste storage. The examples include programs in basalt (Hanford/Washington), in granitic rocks (Climax/Nevada Test Site, Idaho Springs/Colorado, Pinawa/Canada, Oracle/Arizona, and Stripa/Sweden), and in tuff

Elastic Rock Heterogeneity Controls Brittle Rock Failure during Hydraulic Fracturing

Science.gov (United States)

Langenbruch, C.; Shapiro, S. A.

2014-12-01

For interpretation and inversion of microseismic data it is important to understand, which properties of the reservoir rock control the occurrence probability of brittle rock failure and associated seismicity during hydraulic stimulation. This is especially important, when inverting for key properties like permeability and fracture conductivity. Although it became accepted that seismic events are triggered by fluid flow and the resulting perturbation of the stress field in the reservoir rock, the magnitude of stress perturbations, capable of triggering failure in rocks, can be highly variable. The controlling physical mechanism of this variability is still under discussion. We compare the occurrence of microseismic events at the Cotton Valley gas field to elastic rock heterogeneity, obtained from measurements along the treatment wells. The heterogeneity is characterized by scale invariant fluctuations of elastic properties. We observe that the elastic heterogeneity of the rock formation controls the occurrence of brittle failure. In particular, we find that the density of events is increasing with the Brittleness Index (BI) of the rock, which is defined as a combination of Young's modulus and Poisson's ratio. We evaluate the physical meaning of the BI. By applying geomechanical investigations we characterize the influence of fluctuating elastic properties in rocks on the probability of brittle rock failure. Our analysis is based on the computation of stress fluctuations caused by elastic heterogeneity of rocks. We find that elastic rock heterogeneity causes stress fluctuations of significant magnitude. Moreover, the stress changes necessary to open and reactivate fractures in rocks are strongly related to fluctuations of elastic moduli. Our analysis gives a physical explanation to the observed relation between elastic heterogeneity of the rock formation and the occurrence of brittle failure during hydraulic reservoir stimulations. A crucial factor for understanding

Rock.XML - Towards a library of rock physics models

Science.gov (United States)

Jensen, Erling Hugo; Hauge, Ragnar; Ulvmoen, Marit; Johansen, Tor Arne; Drottning, Åsmund

2016-08-01

Rock physics modelling provides tools for correlating physical properties of rocks and their constituents to the geophysical observations we measure on a larger scale. Many different theoretical and empirical models exist, to cover the range of different types of rocks. However, upon reviewing these, we see that they are all built around a few main concepts. Based on this observation, we propose a format for digitally storing the specifications for rock physics models which we have named Rock.XML. It does not only contain data about the various constituents, but also the theories and how they are used to combine these building blocks to make a representative model for a particular rock. The format is based on the Extensible Markup Language XML, making it flexible enough to handle complex models as well as scalable towards extending it with new theories and models. This technology has great advantages as far as documenting and exchanging models in an unambiguous way between people and between software. Rock.XML can become a platform for creating a library of rock physics models; making them more accessible to everyone.

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

International Nuclear Information System (INIS)

Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

2014-01-01

The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

Science.gov (United States)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Late Archaean-early Proterozoic source ages of zircons in rocks from the Paleozoic orogen of western Galicia, NW Spain

Energy Technology Data Exchange (ETDEWEB)

Kuijper, R P; Priem, H N.A. [Laboratorium voor Isotopen-Geologie, Amsterdam (Netherlands); Den Tex, E [Rijksuniversiteit Utrecht (Netherlands). Inst. voor Aardwetenschappen

1982-08-01

U-Pb data are reported for nine suites of zircons and three monazites from the Paleozoic orogen in western Galicia: one paragneiss and six orthogneisses from the early Paleozoic basement, and two Carboniferous (ca. 310 Ma old) intrusions of two-mica granite. New whole-rock Rb-Sr analyses, along with earlier data, indicate an age of ca. 470-440 Ma (Ordovician) for the emplacement of the granitic precursors of the orthogneisses. Monazite from the paragneiss also yields an U-Pb age of ca. 470 Ma. From the high initial /sup 87/Sr//sup 86/Sr ratios an involvement of Precambrian continental crust material is evident in the generation of the early Paleozoic suite of granites, while the zircon U-Pb data give evidence of the presence of about 3.0-2.0 Ga old (late Archaean-early Proterozoic) components in the source material. Zircons from the oldest sedimentary rocks in the area, now present as catazonal paragneisses and a likely source for the granites, likewise reveal a provenance age of 3.0-2.0 Ga.

Rock burst governance of working face under igneous rock

Science.gov (United States)

Chang, Zhenxing; Yu, Yue

2017-01-01

As a typical failure phenomenon, rock burst occurs in many mines. It can not only cause the working face to cease production, but also cause serious damage to production equipment, and even result in casualties. To explore how to govern rock burst of working face under igneous rock, the 10416 working face in some mine is taken as engineering background. The supports damaged extensively and rock burst took place when the working face advanced. This paper establishes the mechanical model and conducts theoretical analysis and calculation to predict the fracture and migration mechanism and energy release of the thick hard igneous rock above the working face, and to obtain the advancing distance of the working face when the igneous rock fractures and critical value of the energy when rock burst occurs. Based on the specific conditions of the mine, this paper put forward three kinds of governance measures, which are borehole pressure relief, coal seam water injection and blasting pressure relief.

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

International Nuclear Information System (INIS)

Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

2013-01-01

Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

Economic, social, and cultural aspects of livestock ranching on the Española and Canjilon Ranger Districts of the Santa Fe and Carson National Forests: a pilot study

Science.gov (United States)

Carol Raish; Alice M. McSweeney

2003-01-01

The ranches of northern New Mexico, composed of land and livestock, are integral components of family and community life. This pilot study examines current economic, social, and cultural aspects of livestock operations owned by ranchers with Federal grazing permits (permittees) on the Canjilon and Española Ranger Districts of the Santa Fe and Carson National...

Trans-Amazonian U-Th-Pb monazite ages and P-T-d exhumation paths of garnet-bearing leucogranite and migmatitic country rock of the southeastern Tandilia belt, Rio de la Plata craton in Argentina

Science.gov (United States)

Martínez, Juan Cruz; Massonne, Hans-Joachim; Frisicale, María Cristina; Dristas, Jorge A.

2017-03-01

A garnet-bearing leucogranite and two country rocks from the Transamazonian Tandilia belt of the Rio de la Plata craton were studied in detail. The leucogranite contains garnet with homogeneous composition of pyr6(gros + andr)2spes5alm87. In a garnet-biotite migmatite, the core and rim compositions of garnet are pyr1.7(gros + andr)5spes5.6alm87.7 and pyr1.2(gros + andr)5.5spes6.7alm86.6, respectively. These compositions in a sillimanite-garnet-muscovite migmatite are pyr4(gros + andr)2.7spes2.7alm90.6 and pyr2.7(gros + andr)4spes3.2alm90.1, respectively. We used this information to decipher the P-T evolution of the rocks applying P-T and T-H2O pseudosections with the PERPLE_X computer software package taking into consideration deformational microstructures. The leucogranite records an isothermal decompression from 5.3 to 3.8 kbar at 665 °C. The garnet-biotite migmatite was exhumed from 5.5 kbar at 630 °C to 4.3 kbar at 615 °C and the sillimanite-garnet-muscovite migmatite from supersolidus conditions of 670 °C and 3.6 kbar to 625 °C at 2.4 kbar. Late andalusite formed in this rock. Seventy four analyses of 28 monazite grains of the country rocks yielded three groups of U-Th-Pb ages which were related to a collisional event (I: ca. 2.13-2.14 Ga.), a postcollisional thermal overprint (II: ca. 2.01 Ga) and slow cooling of the orogen (III: 1.80-1.90 Ga). Inherited ages of 2.28 and 2.25 Ga could refer to an early accretionary stage of the orogen. An age of 2.41 Ga indicates the presence of recycled Siderian continental crust. Synkinematic crystallization of melts and the subsolidus development of an S2-foliation, demonstrated by deformational microstructures, occurred during the exhumation of the studied area from depths of 18 km to 8 km in the time interval 2.01-1.90 Ga.

ECV profiling of GaAs and GaN HEMT heterostructures

Science.gov (United States)

Yakovlev, G.; Zubkov, V.

2018-03-01

AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

2007-01-01

Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

International Nuclear Information System (INIS)

Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

2015-01-01

In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

The stratigraphy of the Steep Rock Group, N.W. Ontario, with evidence of a major unconformity

Science.gov (United States)

Wilks, M. E.; Nisbet, E. G.

1986-01-01

The Steep Rock Group is exposed 6 km north of Atikokan, 200 km west of Thunder Bay. It is situated on the southern margin of the Wabigoon Belt of the Archaean Superior Province, N. W. Ontario. Reinvestigation of the geology of the Group has shown that the Group lies unconformably on the Tonalite Complex to the east. This unconformity has been previously suspected, from regional and ine mapping but no conclusive outcrop evidence for its existence has as yet been published. The strike of the group, comprised of Basal Conglomerate, Carbonate Member, Ore Zone and Ashrock is generally north-northwest dipping steeply to the southwest. Of the 7 contacts between the Steep Rock Group and the Tonalite Complex, 3 expose the unconformity (The Headland, S. Roberts Pit, Trueman Point), and 4 are faulted. These three outcrops demonstrate unequivocally that the Steep Rock group was laid down unconformably on the underlying Tonalite Complex, which is circa 3 Ga old.

For Those About to Rock : Naislaulajat rock-genressä

OpenAIRE

Herranen, Linda

2015-01-01

For those about to rock – naislaulajat rock-genressä antaa lukijalleen kokonaisvaltaisen käsityksen naisista rock-genressä: rockin historiasta, sukupuolittuneisuudesta, seksismistä, suomalaisten naislaulajien menestyksestä. Työn aineisto on koottu aihepiirin kirjallisuudesta ja alalla toimiville naislaulajille teetettyjen kyselyiden tuloksista. Lisäksi avaan omia kokemuksiani ja ajatuksiani, jotta näkökulma naisista rock-genressä tulisi esille mahdollisimman monipuolisesti. Ajatus aihees...

Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

2008-01-01

We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

Proceedings of the 3. Canada-US rock mechanics symposium and 20. Canadian rock mechanics symposium : rock engineering 2009 : rock engineering in difficult conditions

Energy Technology Data Exchange (ETDEWEB)

NONE

2009-07-01

This conference provided a forum for geologists, mining operators and engineers to discuss the application of rock mechanics in engineering designs. Members of the scientific and engineering communities discussed challenges and interdisciplinary elements involved in rock engineering. New geological models and methods of characterizing rock masses and ground conditions in underground engineering projects were discussed along with excavation and mining methods. Papers presented at the conference discussed the role of rock mechanics in forensic engineering. Geophysics, geomechanics, and risk-based approaches to rock engineering designs were reviewed. Issues related to high pressure and high flow water conditions were discussed, and new rock physics models designed to enhance hydrocarbon recovery were presented. The conference featured 84 presentations, of which 9 have been catalogued separately for inclusion in this database. tabs., figs.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

International Nuclear Information System (INIS)

Lenka, T. R.; Panda, A. K.

2011-01-01

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Art Rocks with Rock Art!

Science.gov (United States)

Bickett, Marianne

2011-01-01

This article discusses rock art which was the very first "art." Rock art, such as the images created on the stone surfaces of the caves of Lascaux and Altimira, is the true origin of the canvas, paintbrush, and painting media. For there, within caverns deep in the earth, the first artists mixed animal fat, urine, and saliva with powdered minerals…

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

2015-01-01

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

Strain-balanced InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2014-07-21

InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

Watershed Restoration on Black Drake Ranch: Humility vs. hubris in applying incomplete scientific information to real world applications

Science.gov (United States)

Bulkley, G. B.; Mattenberger, S.

2009-12-01

Black Drake Ranch comprises ~1000 acres of Klamath Basin high desert in S. Central OR, containing 2.5m reaches each of the North Fork Sprague River (NFSR) and its major tributary, Five Mile Creek, a meandering meadow spring creek anchoring 26m of upstream habitat for several species of concern, including native redband trout. Decades of unenlightened management had resulted in substantial watershed degradation: channelization and diking by the U.S. Army Corps of Engineers (hubris), massive stream bank head cuts and erosion by cattle hooves, complete blockade of fish passage by two irrigation diversion dams, loss of eggs and fry in irrigation runoff, upland juniper overgrowth from fire suppression, and extensive infestation of noxious weeds. After in depth analysis by the Working Landscapes Alliance, Klamath Watershed Partnership, Oregon Dept. of Fish and Wildlife, and adjacent landowners, the landowner, a retired cellular biologist, collaborated with an United States Fish & Wildlife Service hydrologist to formulate a comprehensive Long Term Strategic Plan (LTSP) to restore a functioning ecosystem compatible with an economically viable cattle/hay ranching operation. The LTSP is based upon current best practices (CPBs) recommended by experts in relevant, but relatively young scientific fields, with the recognition that these CPBs are constantly evolving as new information becomes available, particularly relevant to this particular site. Consequently, the LTSP remains flexible, and is repeatedly revised as new information is culled from the literature, but mostly from on-site experience and errors. This LTSP entails: 1. Rotational cattle grazing and riparian fencing to allow the re-establishment of bank-stabilizing native plant populations; 2. At diversion dams, installation of fish screens and 3. re-establishment of fish passage using paleochannels revealed by aerial contour mapping; 4. Selective stream bank head cut repair to retain and thereby reduce irrigation

Dating Melt Rock 63545 By Rb-Sr and Sm-Nd: Age of Imbrium; Spa Dress Rehearsal

Science.gov (United States)

Nyquist, L. E.; Shih, C. Y.; Reese, Y. D.

2011-01-01

Apollo 16 sample 63545 was initially described as one of a group of 19 generally rounded, fine-grained, crystalline rocks that were collected as rake samples [1]. This 16 g "rocklet" was collected at Station 13 on the ejecta blanket of North Ray Crater at the foot of Smoky Mountain [2]. Originally classified as a Very High Alumina (VHA) basalt on geochemical grounds [3], it was later argued to be an impact melt rock [4]. Here we report a Rb-Sr and Sm-Nd isotopic study that shows that some portions of the rock failed to reach isotopic equilibrium on last melting in agreement with the impact melt rock interpretation. Nevertheless, by omitting mineral fractions that are discordant with the majority of the data, we arrive at the time of last melting as 3.88 plus or minus 0.05 Ga ago. This age is in agreement with the Ar-39/Ar-40 plateau age of 3839 plus or minus 23 Ma [5], if the latter is adjusted for the 1.4-1.8% revision in the age of the hornblende monitor [6]. This investigation was undertaken in part as proof-of-concept for SPA-basin sample return.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Directory of Open Access Journals (Sweden)

Fu Chen

2017-12-01

Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Science.gov (United States)

Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

Air Force Health Study (Project RANCH HAND II). An Epidemiologic Investigation of Health Effects in Air Force Personnel Following Exposure to Herbicides. Baseline Morbidity Study Results

Science.gov (United States)

1984-02-24

the cranial nerves, peripheral nerves or central nervous system function of the Ranch Handers. As expected, there was a profound influence of diabetes ...Vagina fused, had operation 1 753 1 Defective kidney 1 Malformation of right kidney 1 Infantile polycystic kidney disease 754 Talipes 2 Club foot 2...e.g., matched originals only and the entire comparison group). Further, for specific analyses, participants with diabetes and pedal edema have been

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

Science.gov (United States)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

Science.gov (United States)

Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

2014-01-01

Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

Directory of Open Access Journals (Sweden)

María Luisa Soto-Montenegro

Full Text Available The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts.The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined.Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC.This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

The Usability of Rock-Like Materials for Numerical Studies on Rocks

Science.gov (United States)

Zengin, Enes; Abiddin Erguler, Zeynal

2017-04-01

The approaches of synthetic rock material and mass are widely used by many researchers for understanding the failure behavior of different rocks. In order to model the failure behavior of rock material, researchers take advantageous of different techniques and software. But, the majority of all these instruments are based on distinct element method (DEM). For modeling the failure behavior of rocks, and so to create a fundamental synthetic rock material model, it is required to perform related laboratory experiments for providing strength parameters. In modelling studies, model calibration processes are performed by using parameters of intact rocks such as porosity, grain size, modulus of elasticity and Poisson ratio. In some cases, it can be difficult or even impossible to acquire representative rock samples for laboratory experiments from heavily jointed rock masses and vuggy rocks. Considering this limitation, in this study, it was aimed to investigate the applicability of rock-like material (e.g. concrete) to understand and model the failure behavior of rock materials having complex inherent structures. For this purpose, concrete samples having a mixture of %65 cement dust and %35 water were utilized. Accordingly, intact concrete samples representing rocks were prepared in laboratory conditions and their physical properties such as porosity, pore size and density etc. were determined. In addition, to acquire the mechanical parameters of concrete samples, uniaxial compressive strength (UCS) tests were also performed by simultaneously measuring strain during testing. The measured physical and mechanical properties of these extracted concrete samples were used to create synthetic material and then uniaxial compressive tests were modeled and performed by using two dimensional discontinuum program known as Particle Flow Code (PFC2D). After modeling studies in PFC2D, approximately similar failure mechanism and testing results were achieved from both experimental and

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Science.gov (United States)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Energy Technology Data Exchange (ETDEWEB)

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

OpenAIRE

Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

2014-01-01

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

Science.gov (United States)

Abdullah, Rafid A.; Ibrahim, Kamarulazizi

2010-07-01

ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

Contaminant transport in fracture networks with heterogeneous rock matrices. The Picnic code

International Nuclear Information System (INIS)

Barten, Werner; Robinson, Peter C.

2001-02-01

In the context of safety assessment of radioactive waste repositories, complex radionuclide transport models covering key safety-relevant processes play a major role. In recent Swiss safety assessments, such as Kristallin-I, an important drawback was the limitation in geosphere modelling capability to account for geosphere heterogeneities. In marked contrast to this limitation in modelling capabilities, great effort has been put into investigating the heterogeneity of the geosphere as it impacts on hydrology. Structural geological methods have been used to look at the geometry of the flow paths on a small scale and the diffusion and sorption properties of different rock materials have been investigated. This huge amount of information could however be only partially applied in geosphere transport modelling. To make use of these investigations the 'PICNIC project' was established as a joint cooperation of PSI/Nagra and QuantiSci to provide a new geosphere transport model for Swiss safety assessment of radioactive waste repositories. The new transport code, PICNIC, can treat all processes considered in the older geosphere model RANCH MD generally used in the Kristallin-I study and, in addition, explicitly accounts for the heterogeneity of the geosphere on different spatial scales. The effects and transport phenomena that can be accounted for by PICNIC are a combination of (advective) macro-dispersion due to transport in a network of conduits (legs), micro-dispersion in single legs, one-dimensional or two-dimensional matrix diffusion into a wide range of homogeneous and heterogeneous rock matrix geometries, linear sorption of nuclides in the flow path and the rock matrix and radioactive decay and ingrowth in the case of nuclide chains. Analytical and numerical Laplace transformation methods are integrated in a newly developed hierarchical linear response concept to efficiently account for the transport mechanisms considered which typically act on extremely different

Contaminant transport in fracture networks with heterogeneous rock matrices. The Picnic code

Energy Technology Data Exchange (ETDEWEB)

Barten, Werner [Paul Scherrer Inst., CH-5232 Villigen PSI (Switzerland); Robinson, Peter C. [QuantiSci Limited, Henley-on-Thames (United Kingdom)

2001-02-01

In the context of safety assessment of radioactive waste repositories, complex radionuclide transport models covering key safety-relevant processes play a major role. In recent Swiss safety assessments, such as Kristallin-I, an important drawback was the limitation in geosphere modelling capability to account for geosphere heterogeneities. In marked contrast to this limitation in modelling capabilities, great effort has been put into investigating the heterogeneity of the geosphere as it impacts on hydrology. Structural geological methods have been used to look at the geometry of the flow paths on a small scale and the diffusion and sorption properties of different rock materials have been investigated. This huge amount of information could however be only partially applied in geosphere transport modelling. To make use of these investigations the 'PICNIC project' was established as a joint cooperation of PSI/Nagra and QuantiSci to provide a new geosphere transport model for Swiss safety assessment of radioactive waste repositories. The new transport code, PICNIC, can treat all processes considered in the older geosphere model RANCH MD generally used in the Kristallin-I study and, in addition, explicitly accounts for the heterogeneity of the geosphere on different spatial scales. The effects and transport phenomena that can be accounted for by PICNIC are a combination of (advective) macro-dispersion due to transport in a network of conduits (legs), micro-dispersion in single legs, one-dimensional or two-dimensional matrix diffusion into a wide range of homogeneous and heterogeneous rock matrix geometries, linear sorption of nuclides in the flow path and the rock matrix and radioactive decay and ingrowth in the case of nuclide chains. Analytical and numerical Laplace transformation methods are integrated in a newly developed hierarchical linear response concept to efficiently account for the transport mechanisms considered which typically act on extremely

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

Science.gov (United States)

Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

2016-04-01

The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Science.gov (United States)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Carrier quenching in InGaP/GaAs double heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

2015-08-14

Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

Growth of (20 anti 21)AlGaN, GaN and InGaN by metal organic vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Wernicke, T.; Rass, J.; Pristovsek, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2012-07-01

Green InGaN-based laser diodes on (20 anti 21)GaN substrates have recently demonstrated performances exceeding those of conventional (0001) oriented devices. However little is known regarding the growth parameters. We have investigated growth of AlGaN, GaN and InGaN on (20 anti 21)GaN substrates by MOVPE. Smooth GaN layers with a rms roughness <0.5 nm were obtained by low growth temperatures and reactor pressures. The layers exhibit undulations along [10 anti 14] similar to the GaN substrate. AlGaN and InGaN layers exhibit an increased surface roughness. Undulation bunching was observed and attributed to reduced adatom surface mobility due to the binding energy of Al and the low growth temperature for InGaN respectively or strain relaxation. AlGaN and InGaN heterostructures on (20 anti 21)GaN relax by layer tilt accompanied by formation of misfit dislocations, due to shear strain of the unit cell. This relaxation mechanism leads to a reduced critical layer thickness of (20 anti 21)AlGaN layers and InGaN multi quantum wells (MQW) in comparison to (0001). PL spectral broadening of 230 meV of (20 anti 21)InGaN single QWs emitting at 415 nm can be reduced by increased growth temperature or increased number of QWs with reduced thickness.

Exciton binding energy in wurtzite InGaN/GaN quantum wells

International Nuclear Information System (INIS)

Park, Seoung-Hwan; Kim, Jong-Jae; Kim, Hwa-Min

2004-01-01

The internal field and carrier density effects on the exciton binding energies in wurtzite (WZ) InGaN/GaN quantum-well (QW) structures are investigated using the multiband effective-mass theory, and are compared with those obtained from the at-band model and with those of GaN/AlGaN QW structures. The exciton binding energy is significantly reduced with increasing sheet carrier density, suggesting that excitons are nearly bleached at densities around 10 12 cm -2 for both InGaN/GaN and GaN/AlGaN QW structures. With the inclusion of the internal field, the exciton binding energy is substantialy reduced compared to that of the at-band model in the investigated region of the wells. This can be explained by a decrease in the momentum matrix element and an increase in the inverse screening length due to the internal field. The exciton binding energy of the InGaN/GaN structure is smaller than that of the GaN/AlGaN structure because InGaN/GaN structures have a smaller momentum matrix element and a larger inverse screening length than GaN/AlGaN structures.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

Directory of Open Access Journals (Sweden)

P. C. Chang

2014-01-01

Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Rock Art

Science.gov (United States)

Henn, Cynthia A.

2004-01-01

There are many interpretations for the symbols that are seen in rock art, but no decoding key has ever been discovered. This article describes one classroom's experiences with a lesson on rock art--making their rock art and developing their own personal symbols. This lesson allowed for creativity, while giving an opportunity for integration…

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Oswald, Jiří; Vyskočil, Jan; Kuldová, Karla; Šimeček, Tomislav; Hazdra, P.; Caha, O.

2010-01-01

Roč. 312, č. 8 (2010), 1383-1387 ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.737, year: 2010

InGaN nanoinclusions in an AlGaN matrix

International Nuclear Information System (INIS)

Sizov, V. S.; Tsatsul'nikov, A. F.; Lundin, V. V.

2008-01-01

GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of structures in a temperature range of 80-300 K and at various pumping densities, and electroluminescence spectra are obtained for light-emitting (LED) structures with various types of active region. It is shown that the structures with quantum dots in the AlGaN matrix are more stable thermally due to the larger localization energy compared with quantum dots in the GaN matrix. Due to this, the LED structures with quantum dots in an AlGaN matrix are more effective.

70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

Radiative and non-radiative recombination in GaInN/GaN quantum wells; Strahlende und nichtstrahlende Rekombination in GaInN/GaN-Quantenfilmen

Energy Technology Data Exchange (ETDEWEB)

Netzel, C.

2007-02-08

The studies presented in this thesis deal with the occurence of V defectsin GaInN/GaN quantum film structures grown by means of organometallic gas phase epitaxy, and the effects, which have the V defects respectively the GaInN quantum films on the V-defect facets on the emission and recombination properties of the whole GaInN/GaN quantum film structure. The V-defects themselves, inverse pyramidal vacancies with hexagonal base in the semiconductor layers, arise under suitable growth conditions around the percussion violations, which extend in lattice-mismatched growth of GaN on the heterosubstrates sapphire or silicon carbide starting in growth direction through the crystal. If GaInN layers are grown over V-defect dispersed layers on the (1-101) facets of the V defects and the (0001) facets, the growth front of the structure, different growth velocities are present, which lead to differently wide GaInN quantum films on each facets.

Cubic AlGaN/GaN structures for device application

Energy Technology Data Exchange (ETDEWEB)

Schoermann, Joerg

2007-05-15

The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

A model for Nb-Zr-REE-Ga enrichment in Lopingian altered alkaline volcanic ashes: Key evidence of H-O isotopes

Science.gov (United States)

Dai, Shifeng; Nechaev, Victor P.; Chekryzhov, Igor Yu.; Zhao, Lixin; Vysotskiy, Sergei V.; Graham, Ian; Ward, Colin R.; Ignatiev, Alexander V.; Velivetskaya, Tatyana A.; Zhao, Lei; French, David; Hower, James C.

2018-03-01

Clay-altered volcanic ash with highly-elevated concentrations of Nb(Ta), Zr(Hf), rare earth elements (REE), and Ga, is a new type of critical metal deposit with high commercial prospects that has been discovered in Yunnan Province, southwest China. Previous studies showed that the volcanic ashes had been subjected to hydrothermal fluids, the nature of which, however, is not clear. Here we show that the volcanic ashes were originated from alkaline magmatism, followed by a continuous hydrothermal-weathering process. Heated meteoric waters, which were sourced from acidic rains and mixed with CO2 from degassing of the Emeishan plume, have caused partial, but widespread, acidic leaching of Nb, Ta, Zr, Hf, REE, and Ga into ground water and residual enrichment of these elements, along with Al and Ti, in the deeply altered rocks. Subsequent alteration occurring under cooler, neutral or alkaline conditions, caused by water-rock interaction, resulted in precipitation of the leached critical metals in the deposit. Polymetallic mineralization of similar origin may be found in other continental regions subjected to explosive alkaline volcanism associated with deep weathering in humid conditions.

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

International Nuclear Information System (INIS)

Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-01-01

Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Science.gov (United States)

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Thermally induced rock stress increment and rock reinforcement response

International Nuclear Information System (INIS)

Hakala, M.; Stroem, J.; Nujiten, G.; Uotinen, L.; Siren, T.; Suikkanen, J.

2014-07-01

This report describes a detailed study of the effect of thermal heating by the spent nuclear fuel containers on the in situ rock stress, any potential rock failure, and associated rock reinforcement strategies for the Olkiluoto underground repository. The modelling approach and input data are presented together repository layout diagrams. The numerical codes used to establish the effects of heating on the in situ stress field are outlined, together with the rock mass parameters, in situ stress values, radiogenic temperatures and reinforcement structures. This is followed by a study of the temperature and stress evolution during the repository's operational period and the effect of the heating on the reinforcement structures. It is found that, during excavation, the maximum principal stress is concentrated at the transition areas where the profile changes and that, due to the heating from the deposition of spent nuclear fuel, the maximum principal stress rises significantly in the tunnel arch area of NW/SW oriented central tunnels. However, it is predicted that the rock's crack damage (CD, short term strength) value of 99 MPa will not be exceeded anywhere within the model. Loads onto the reinforcement structures will come from damaged and loosened rock which is assumed in the modelling as a free rock wedge - but this is very much a worst case scenario because there is no guarantee that rock cracking would form a free rock block. The structural capacity of the reinforcement structures is described and it is predicted that the current quantity of the rock reinforcement is strong enough to provide a stable tunnel opening during the peak of the long term stress state, with damage predicted on the sprayed concrete liner. However, the long term stability and safety can be improved through the implementation of the principles of the Observational Method. The effect of ventilation is also considered and an additional study of the radiogenic heating effect on the brittle

Thermally induced rock stress increment and rock reinforcement response

Energy Technology Data Exchange (ETDEWEB)

Hakala, M. [KMS Hakala Oy, Nokia (Finland); Stroem, J.; Nujiten, G.; Uotinen, L. [Rockplan, Helsinki (Finland); Siren, T.; Suikkanen, J.

2014-07-15

This report describes a detailed study of the effect of thermal heating by the spent nuclear fuel containers on the in situ rock stress, any potential rock failure, and associated rock reinforcement strategies for the Olkiluoto underground repository. The modelling approach and input data are presented together repository layout diagrams. The numerical codes used to establish the effects of heating on the in situ stress field are outlined, together with the rock mass parameters, in situ stress values, radiogenic temperatures and reinforcement structures. This is followed by a study of the temperature and stress evolution during the repository's operational period and the effect of the heating on the reinforcement structures. It is found that, during excavation, the maximum principal stress is concentrated at the transition areas where the profile changes and that, due to the heating from the deposition of spent nuclear fuel, the maximum principal stress rises significantly in the tunnel arch area of NW/SW oriented central tunnels. However, it is predicted that the rock's crack damage (CD, short term strength) value of 99 MPa will not be exceeded anywhere within the model. Loads onto the reinforcement structures will come from damaged and loosened rock which is assumed in the modelling as a free rock wedge - but this is very much a worst case scenario because there is no guarantee that rock cracking would form a free rock block. The structural capacity of the reinforcement structures is described and it is predicted that the current quantity of the rock reinforcement is strong enough to provide a stable tunnel opening during the peak of the long term stress state, with damage predicted on the sprayed concrete liner. However, the long term stability and safety can be improved through the implementation of the principles of the Observational Method. The effect of ventilation is also considered and an additional study of the radiogenic heating effect on the

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre [Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France); Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe [CRHEA-CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

International Nuclear Information System (INIS)

Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

2006-01-01

We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

Nanomaterial disordering in AlGaN/GaN UV LED structures

International Nuclear Information System (INIS)

Shabunina, E I; Levinshtein, M E; Kulagina, M M; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Kurin, S Yu; Makarov, Yu N; Chernyakov, A E; Usikov, A S; Helava, H

2015-01-01

Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs. (paper)

Comparison of disposal concepts for rock salt and hard rock

International Nuclear Information System (INIS)

Papp, R.

1998-01-01

The study was carried out in the period 1994-1996. The goals were to prepare a draft on spent fuel disposal in hard rock and additionally a comparison with existing disposal concepts for rock salt. A cask for direct disposal of spent fuel and a repository for hard rock including a safeguards concept were conceptually designed. The results of the study confirm, that the early German decision to employ rock salt was reasonable. (orig.)

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-04-28

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

Science.gov (United States)

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

Mechanism of Rock Burst Occurrence in Specially Thick Coal Seam with Rock Parting

Science.gov (United States)

Wang, Jian-chao; Jiang, Fu-xing; Meng, Xiang-jun; Wang, Xu-you; Zhu, Si-tao; Feng, Yu

2016-05-01

Specially thick coal seam with complex construction, such as rock parting and alternative soft and hard coal, is called specially thick coal seam with rock parting (STCSRP), which easily leads to rock burst during mining. Based on the stress distribution of rock parting zone, this study investigated the mechanism, engineering discriminant conditions, prevention methods, and risk evaluation method of rock burst occurrence in STCSRP through setting up a mechanical model. The main conclusions of this study are as follows. (1) When the mining face moves closer to the rock parting zone, the original non-uniform stress of the rock parting zone and the advancing stress of the mining face are combined to intensify gradually the shearing action of coal near the mining face. When the shearing action reaches a certain degree, rock burst easily occurs near the mining face. (2) Rock burst occurrence in STCSRP is positively associated with mining depth, advancing stress concentration factor of the mining face, thickness of rock parting, bursting liability of coal, thickness ratio of rock parting to coal seam, and difference of elastic modulus between rock parting and coal, whereas negatively associated with shear strength. (3) Technologies of large-diameter drilling, coal seam water injection, and deep hole blasting can reduce advancing stress concentration factor, thickness of rock parting, and difference of elastic modulus between rock parting and coal to lower the risk of rock burst in STCSRP. (4) The research result was applied to evaluate and control the risk of rock burst occurrence in STCSRP.

A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

KAUST Repository

Von Dollen, Paul

2016-09-09

We report recent results of bulk GaN crystal growth using the sodium flux method in a new crucible-free growth system. We observed a (0001) Ga face (+c-plane) growth rate >50 µm/h for growth at a N2 overpressure of ~5 MPa and 860 °C, which is the highest crystal growth rate reported for this technique to date. Omega X-ray rocking curve (ω-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were <100 arcseconds. Oxygen impurity concentrations as measured by secondary ion mass spectroscopy (SIMS) were >1020 atoms/cm3. By monitoring the nitrogen pressure decay over the course of the crystal growth, we developed an in situ method that correlates gas phase changes with precipitation of GaN from the sodium-gallium melt. Based on this analysis, the growth rate may have actually been as high as 90 µm/h, as it would suggest GaN growth ceased prior to the end of the run. We also observed gas phase behavior identified as likely characteristic of GaN polynucleation.

A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

KAUST Repository

Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Nakamura, Shuji; Speck, James S.

2016-01-01

We report recent results of bulk GaN crystal growth using the sodium flux method in a new crucible-free growth system. We observed a (0001) Ga face (+c-plane) growth rate >50 µm/h for growth at a N2 overpressure of ~5 MPa and 860 °C, which is the highest crystal growth rate reported for this technique to date. Omega X-ray rocking curve (ω-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were <100 arcseconds. Oxygen impurity concentrations as measured by secondary ion mass spectroscopy (SIMS) were >1020 atoms/cm3. By monitoring the nitrogen pressure decay over the course of the crystal growth, we developed an in situ method that correlates gas phase changes with precipitation of GaN from the sodium-gallium melt. Based on this analysis, the growth rate may have actually been as high as 90 µm/h, as it would suggest GaN growth ceased prior to the end of the run. We also observed gas phase behavior identified as likely characteristic of GaN polynucleation.

Agua Caliente Wind/Solar Project at Whitewater Ranch

Energy Technology Data Exchange (ETDEWEB)

Hooks, Todd [Agua Caliente Band of Cahuilla Indians, Palm Springs, CA (United States); Stewart, Royce [Red Mountain Energy Partners, Sante Fe, NM (United States)

2014-12-16

Agua Caliente Band of Cahuilla Indians (ACBCI) was awarded a grant by the Department of Energy (DOE) to study the feasibility of a wind and/or solar renewable energy project at the Whitewater Ranch (WWR) property of ACBCI. Red Mountain Energy Partners (RMEP) was engaged to conduct the study. The ACBCI tribal lands in the Coachella Valley have very rich renewable energy resources. The tribe has undertaken several studies to more fully understand the options available to them if they were to move forward with one or more renewable energy projects. With respect to the resources, the WWR property clearly has excellent wind and solar resources. The DOE National Renewable Energy Laboratory (NREL) has continued to upgrade and refine their library of resource maps. The newer, more precise maps quantify the resources as among the best in the world. The wind and solar technology available for deployment is also being improved. Both are reducing their costs to the point of being at or below the costs of fossil fuels. Technologies for energy storage and microgrids are also improving quickly and present additional ways to increase the wind and/or solar energy retained for later use with the network management flexibility to provide power to the appropriate locations when needed. As a result, renewable resources continue to gain more market share. The transitioning to renewables as the major resources for power will take some time as the conversion is complex and can have negative impacts if not managed well. While the economics for wind and solar systems continue to improve, the robustness of the WWR site was validated by the repeated queries of developers to place wind and/or solar there. The robust resources and improving technologies portends toward WWR land as a renewable energy site. The business case, however, is not so clear, especially when the potential investment portfolio for ACBCI has several very beneficial and profitable alternatives.

A new system for sodium flux growth of bulk GaN. Part I: System development

Science.gov (United States)

Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.

2016-12-01

Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.

Rollerjaw Rock Crusher

Science.gov (United States)

Peters, Gregory; Brown, Kyle; Fuerstenau, Stephen

2009-01-01

The rollerjaw rock crusher melds the concepts of jaw crushing and roll crushing long employed in the mining and rock-crushing industries. Rollerjaw rock crushers have been proposed for inclusion in geological exploration missions on Mars, where they would be used to pulverize rock samples into powders in the tens of micrometer particle size range required for analysis by scientific instruments.

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Science.gov (United States)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

Range sections as rock models for intensity rock scene segmentation

CSIR Research Space (South Africa)

Mkwelo, S

2007-11-01

Full Text Available This paper presents another approach to segmenting a scene of rocks on a conveyor belt for the purposes of measuring rock size. Rock size estimation instruments are used to monitor, optimize and control milling and crushing in the mining industry...

Tectonic implications of the contrasting geochemistry of Damaran mafic volcanic rocks, South West Africa

International Nuclear Information System (INIS)

Miller, R.McG.

1983-01-01

Ortho-amphibolites occur in the southern and central parts of the north-east-trending branch of the Damara Orogen. The Matchless Member amphibolites are interbedded with quartzose mica schist. Mobility of Si, ΣFe, Mn, Mg, Ca, Na, K, P, CO 2 , H 2 O, Rb, Ba, Sr and possibly LREE and immobility of Co, V, Sc, Ga, Zr, Nb, Y and HREE are indicated during metamorphism and reaction with country rock. Central Zone amphibolites are alkaline. The stratigraphically lower amphibolites have a within-plate chemistry; their distribution and associated rock types indicate a continental origin. The Matchless amphibolites have an ocean-floor chemistry. The Damaran sedimentary and orogenic cycle was initiated by continental rifting in three parallel zones in which alkaline acid volcanics occur locally. Widespread subsidence of the rift zones and the intervening areas followed and led to deposition of carbonate and clastic rocks under shallow marine conditions. During renewed rifting, submarine, alkaline basic lavas were extruded. The Southern Margin Zone amphibolites are interbedded with continental slope mixtites and continental rise deep-water fans. Spreading led to continental breakup and the formation of oceanic crust

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

International Nuclear Information System (INIS)

Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

2000-01-01

We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

Science.gov (United States)

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Use of Sr and Pb isotopes in gneissic-migmatic rocks in Itacambira-Barrocao, MG, Brazil

International Nuclear Information System (INIS)

Siga Junior, O.; Cordani, U.G.; Basei, M.A.S.; Kawashita, K.

1987-01-01

This work tries to show the potential of the Rb-Sr, Pb-Pb and K-Ar methods applied to basic geological mapping. The different interpretative values of these methodologies contribute to the understanding of the tectonic processes developed in the southeastern border of the Sao Francisco Craton. The Rb-Sr and Pb-Pb isotopic data for the gneissic-migmatitic unit of this sector indicates their generation during the Archean (-2.7 Ga) and Early Proterozoic (-2.1 Ga.). The high (Sr 87 /Sr 86 ) and μ 1 values also suggest an origin through reworking of older crustal rocks. The K-Ar data (and one fission track age) allow the thermal history of this domain to be delineated and suggest a vertical tectonic in the Late Brazilian Cycle, putting side by side blocks formed in different depths. (M.V.M.)

Gold free contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, Marcin

2018-01-01

Transistors and diodes based on AlGaN/GaN are suitable candidates for high-voltage and high-speed electronics due to the GaN material properties such as wide bandgap, large breakdown field, high electron saturation velocity and good thermal conductivity. When thin AlGaN layer is grown epitaxially on

Litho stratigraphy of precambrian rocks in middle Xingu river basin -Altamira, Para state, Brazil

International Nuclear Information System (INIS)

Santos, M.V. dos; Sousa Filho, E.E. dos; Tassinari, C.C.G.

1988-01-01

The basement rocks from the Xingu river is divided into five litho stratigraphic units. They are broadly characterized by domains of ortho and para gneisses, volcano-sedimentary sequences, migmatites and by syntectonic and latetectonic granitoids. In addition acid to intermediate volcanics (Iriri formation) and several sub-volcanic granitic plutons (Maloquinha suite) also occur within the investigated area, as well as basic intrusions and minor arenous sediments covers, slightly metamorphosed. Geochronological studies carried out on the basement rocks and on the volcanics demonstrates an geologic evolution restricted to the trans Amazonian cycle (2.1 - 1.9 Ga). Sr isotopic evolution (high initial 87 Sr/ 86 Sr ratios) suggest that strong reworking of crustal material occurred at this time, in association with the tectonic evolution of the Maroni-Itacaiunas mobile belt related to the lower proterozoic, which borders the northern and northerneast part of the Archean central Amazonian province. (author)

Early mantle dynamics inferred from 142Nd variations in Archean rocks from southwest Greenland

DEFF Research Database (Denmark)

Rizo, Hanika; Boyet, Maud; Blichert-Toft, Janne

2013-01-01

of the Greenland samples from a source formed in the Hadean. This mantle source is the oldest yet identified on Earth and therefore provides key information about the nature and evolution of early-differentiated reservoirs. In contrast, modern mantle-derived rocks from around the world do not have Nd-142 anomalies......The composition and evolution of the silicate Earth during Hadean/Eoarchean times are widely debated and largely unknown due to the sparse geological record preserved from Earth's infancy. The short-lived Sm-146-Nd-142 chronometer applied to 3.8-3.7 Ga old mantle-derived amphibolites from the Isua...... Supracrustal Belt (ISB) in southwest Greenland has revealed ubiquitous Nd-142 excesses in these rocks compared to modern samples and terrestrial Nd standards. Because the parent isotope, Sm-146, was extant only during the first few hundred million years of Solar System history, this implies derivation...

Clinical evaluation of 67Ga gut accumulation in 67Ga scintigraphy

International Nuclear Information System (INIS)

Kobayashi, Hidetoshi; Ohno, Akiko; Watanabe, Youichi; Ishigaki, Takeo.

1994-01-01

Accumulation of 67 Ga in gut was evaluated in 67 Ga scintigraphy retrospectively in 30 patients (32 examinations). TIBC and UIBC were examined in all patients on the day when their scintigraphies were performed. Blood transfusion or Fe administration 2 months before 67 Ga scintigraphies were not carried out in any patient. Fifty percents (6/12) of male, and 40% (8/20) of female patients showed 67 Ga accumulation in gut. There was significant correlation between 67 Ga accumulation in gut and low ion-saturation ratio for transferrin. Excretion of 67 Ga bound with transferrin from liver was thought to be an important factor of 67 ga accumulation in gut. (author)

Characterization of GaN/AlGaN epitaxial layers grown

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

Study of GaN nanorods converted from β-Ga2O3

Science.gov (United States)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

Contributions to the petrography, geochemistry and geochronology (U-Pb and Sm-Nd) of the Paleoproterozoic effusive rocks from Iricoume Group, Amazonian Craton, Brazil

Energy Technology Data Exchange (ETDEWEB)

Marques, Suelen Nonata de Souza; Nascimento, Rielva Solimairy Campelo do, E-mail: suelen-marques@hotmail.com, E-mail: rielva@ufam.edu.br [Universidade Federal do Amazonas (UFAM), Manaus, AM (Brazil). Inst. de Geociencias; Souza, Valmir da Silva; Dantas, Elton Luiz, E-mail: vsouza@unb.br, E-mail: elton@unb.br [Universidade de Brasilia (UnB), DF (Brazil). Inst. de Geociencias; Valerio, Cristovao da Silva, E-mail: cristovao@igeo.ufrr.br [Universidade Federal de Roraima (UFRR), Boa Vista, RR (Brazil). Inst. de Geociencias

2014-07-01

The southernmost region of the Guyana shield, Amazonian craton, hosts large record of Paleoproterozoic effusive rocks of the Iricoume Group. They present remarkably well-preserved igneous textures and structures. The SiO{sub 2} contents reveal a bimodal association marked by a compositional gap between acid (SiO{sub 2} > 67 wt%) and intermediate (SiO{sub 2} < 57.7 wt%) rocks. The acid effusive rocks are rhyolites to rhyodacites with high SiO{sub 2}, alkali, Rb, Zr, Nb + Ta, La + Ce and 104 Ga/Al content and low Fe{sub 2}O{sub 3tot}, TiO{sub 2}, CaO, Sr and Co content. They exhibit subalkaline, metaluminous-to-peraluminous compositions, and geochemically compatible to A-type magmatism emplaced in post-collisional to within-plate tectonic settings. The intermediate rocks are andesitic/basalt to andesite relatively high contents of TiO{sub 2}, Al{sub 2}O{sub 3}, Fe{sub 2}O{sub 3total}, MgO, CaO, Sr and Co; low SiO{sub 2}, K{sub 2}O, Rb, Zr, Nb + Ta, La + Ce. They have subalkaline and metaluminous geochemical composition and plot on within-plate basalt field. The acid rocks crystallized at 1882 ± 11 Ma in U-Pb analyses for LA-MC-ICPMS zircon data. The Sm-Nd isotopic data on all rocks reveal a Nd TDM model ages between 2.59 and 2.16 Ga and ε{sub Nd}(t) values between -5.78 and 0.03, indicate that the magmatic evolution was related to the reworking of older Paleoproterozoic at the Rhyacian-Siderian period, continental crust (Transamazonian crust-forming event) with some mixing with a limited amount mantle-derived magmas or with contamination by Archean crust. The petrographic, geochemical and geochronological data presented in this paper suggest a within-plate to post-collisional tectonic setting for the Iricoume volcanism, involving lower crust uplift and generation of basalt magma in an extensional regime. (author)

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

Science.gov (United States)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

2013-01-01

Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

Science.gov (United States)

Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

2013-05-01

In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

Energy Technology Data Exchange (ETDEWEB)

Shimomoto, Kazuma; Ueno, Kohei [Institute of Industrial Science, University of Tokyo (Japan); Kobayashi, Atsushi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Department of Applied Chemistry, University of Tokyo (Japan); Ohta, Jitsuo [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi [Mitsubishi Chemical Group, Science and Technology Research Center, Higashi-Mamiana, Ushiku-shi, Ibaraki (Japan)

2009-05-15

The authors have grown high-quality m -plane In{sub 0.36}Ga{sub 0.64}N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In{sub 0.36}Ga{sub 0.64}N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

International Nuclear Information System (INIS)

Shimomoto, Kazuma; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

2009-01-01

The authors have grown high-quality m -plane In 0.36 Ga 0.64 N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of the GaN-on-GaAs interface for vertical power device applications

International Nuclear Information System (INIS)

Möreke, Janina; Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

2014-01-01

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Investigation of the GaN-on-GaAs interface for vertical power device applications

Energy Technology Data Exchange (ETDEWEB)

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

International Nuclear Information System (INIS)

Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

2014-01-01

Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

Fluid and rock interaction in permeable volcanic rock

International Nuclear Information System (INIS)

Lindley, J.I.

1985-01-01

Four types of interrelated changes -geochemical, mineralogic, isotopic, and physical - occur in Oligocene volcanic units of the Mogollon-Datil volcanic field, New Mexico. These changes resulted from the operation of a geothermal system that, through fluid-rock interaction, affected 5 rhyolite ash-flow tuffs and an intercalated basaltic andesite lava flow causing a potassium metasomatism type of alteration. (1) Previous studies have shown enrichment of rocks in K 2 O as much as 130% of their original values at the expense of Na 2 O and CaO with an accompanying increase in Rb and decreases in MgO and Sr. (2) X-ray diffraction results of this study show that phenocrystic plagioclase and groundmass feldspar have been replaced with pure potassium feldspar and quartz in altered rock. Phenocrystic potassium feldspar, biotite, and quartz are unaffected. Pyroxene in basaltic andesite is replaced by iron oxide. (3) delta 18 O increases for rhyolitic units from values of 8-10 permil, typical of unaltered rock, to 13-15 permil, typical of altered rock. Basaltic andesite, however, shows opposite behavior with a delta 18 of 9 permil in unaltered rock and 6 permit in altered. (4) Alteration results in a density decrease. SEM revealed that replacement of plagioclase by fine-grained quartz and potassium feldspar is not a volume for volume replacement. Secondary porosity is created in the volcanics by the chaotic arrangement of secondary crystals

Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

International Nuclear Information System (INIS)

Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.

2010-01-01

The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

Ga and Pt NMR study of UPtGa sub 5 and UNiGa sub 5

CERN Document Server

Kato, H; Tokunaga, Y; Tokiwa, Y; Ikeda, S; Onuki, Y; Kambe, S; Walstedt, R E

2003-01-01

Ga and Pt NMR measurements have been carried out for two isomorphs compounds, UPtGa sub 5 and UNiGa sub 5 , which exhibit different magnetic structures below T sub N. Knight shift K measurements in the paramagnetic region are reported here. The transferred hyperfine coupling constants at Ga and Pt sites are determined. The temperature independent part K sub 0 of K, which probes the conduction electron polarization at the ligand site, has been successfully evaluated. A nearly identical conduction electron structure in the paramagnetic region is suggested for these two compounds. The origin of the different magnetic structures is discussed.

Detrital zircon without detritus: a result of 496-Ma-old fluid-rock interaction during the gold-lode formation of Passagem, Minas Gerais, Brazil

Science.gov (United States)

Cabral, Alexandre Raphael; Zeh, Armin

2015-01-01

Zircon and xenotime occur in tourmaline-rich hydrothermal pockets in the auriferous lode of Passagem de Mariana, a world-class gold deposit. Zircon grains show pristine oscillatory zoning, but many of them are altered, exhibiting porous domains filled with graphite. Uranium-Pb dating of zircon, using in-situ laser ablation-inductively coupled plasma-mass spectrometry, yields ages between 3.2 and 2.65 Ga, which match those for detrital zircon of the footwall quartzite of the > 2.65-Ga-old Moeda Formation. Discordant analyses point to zircon-age resetting during the Brasiliano orogeny at ca. 500 Ma. This interpretation is supported by U-Pb dating of euhedral xenotime immediately adjacent to altered zircon within the same tourmaline pocket. The xenotime grains give a Concordia age of 496.3 ± 2.0 Ma, which is identical to that determined for monazite of a quartz-hematite vein-type deposit (i.e., jacutinga lode) in the region (Itabira), another important mineralisation style of gold. The occurrence of relatively abundant inherited detrital zircon, but absence of rock fragments in the tourmaline pocket investigated here, implies that detrital material was completely replaced by tourmaline. The graphite overprint on the altered detrital zircon attests to a reducing fluid, which was likely formed by fluid-rock interaction with carbonaceous phyllite of the Batatal Formation, the host rock of the Passagem lode.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

Science.gov (United States)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

Durability testing of the high-capacity GA-4/GA-9 trailer

International Nuclear Information System (INIS)

Zimmer, A.; Lyon, T.

1995-01-01

GA designed trailers to transport the GA-4 and GA-9 LWT from-reactor spent nuclear fuel shipping casks. GA designed and fabricated the GA-9 trailer to ANSI N14.30 requirements and is now performing a durability test at the AlliedSignal Automotive Proving Grounds. The trailer, simulated cask and tractor. The test program objective is to evaluate and improve, as necessary, the trailer's durability, reliability and performance

Emergency Assessment of Debris-Flow Hazards from Basins Burned by the 2007 Ranch Fire, Ventura and Los Angeles Counties, Southern California

Science.gov (United States)

Cannon, Susan H.; Gartner, Joseph E.; Michael, John A.; Bauer, Mark A.; Stitt, Susan C.; Knifong, Donna L.; McNamara, Bernard J.; Roque, Yvonne M.

2007-01-01

INTRODUCTION The objective of this report is to present a preliminary emergency assessment of the potential for debris-flow generation from basins burned by the Ranch Fire in Ventura and Los Angeles Counties, southern California in 2007. Debris flows are among the most hazardous geologic phenomena; debris flows that followed wildfires in southern California in 2003 killed 16 people and caused tens of millions of dollars of property damage. A short period of even moderate rainfall on a burned watershed can lead to debris flows. Rainfall that is normally absorbed into hillslope soils can run off almost instantly after vegetation has been removed by wildfire. This causes much greater and more rapid runoff than is normal from creeks and drainage areas. Highly erodible soils in a burn scar allow flood waters to entrain large amounts of ash, mud, boulders, and unburned vegetation. Within the burned area and downstream, the force of rushing water, soil, and rock can destroy culverts, bridges, roadways, and buildings, potentially causing injury or death. This emergency debris-flow hazard assessment is presented as relative ranking of the predicted median volume of debris flows that can issue from basin outlets in response to 2.25 inches (57.15 mm) of rainfall over a 3-hour period. Such a storm has a 10-year return period. The calculation of debris flow volume is based on a multiple-regression statistical model that describes the median volume of material that can be expected from a recently burned basin as a function of the area burned at high and moderate severity, the basin area with slopes greater than or equal to 30 percent, and triggering storm rainfall. Cannon and others (2007) describe the methods used to generate the hazard maps. Identification of potential debris-flow hazards from burned drainage basins is necessary to issue warnings for specific basins, to make effective mitigation decisions, and to help plan evacuation timing and routes.

Reactivation of the Archean-Proterozoic suture along the southern margin of Laurentia during the Mazatzal orogeny: Petrogenesis and tectonic implications of ca. 1.63 Ga granite in southeastern Wyoming

Science.gov (United States)

Jones, Daniel S.; Barnes, Calvin G.; Premo, Wayne R.; Snoke, Arthur W.

2013-01-01

The presence of ca. 1.63 Ga monzogranite (the “white quartz monzonite”) in the southern Sierra Madre, southeastern Wyoming, is anomalous given its distance from the nearest documented plutons of similar age (central Colorado) and the nearest contemporaneous tectonic margin (New Mexico). It is located immediately south of the Cheyenne belt—a ca. 1.75 Ga Archean-Proterozoic tectonic suture. New geochronological, isotopic, and geochemical data suggest that emplacement of the white quartz monzonite occurred between ca. 1645 and 1628 Ma (main pulse ca. 1628 Ma) and that the white quartz monzonite originated primarily by partial melting of the Big Creek Gneiss, a modified arc complex. There is no evidence that mafic magmas were involved. Open folds of the ca. 1750 Ma regional foliation are cut by undeformed white quartz monzonite. On a regional scale, rocks intruded by the white quartz monzonite have experienced higher pressure and temperature conditions and are migmatitic as compared to the surrounding rocks, suggesting a genetic relationship between the white quartz monzonite and tectonic exhumation. We propose that regional shortening imbricated the Big Creek Gneiss, uplifting the now-exposed high-grade rocks of the Big Creek Gneiss (hanging wall of the thrust and wall rock to the white quartz monzonite) and burying correlative rocks, which partially melted to form the white quartz monzonite. This tectonism is attributed to the ca. 1.65 Ga Mazatzal orogeny, as foreland shortening spread progressively into the Yavapai Province. Mazatzal foreland effects have also been described in the Great Lakes region and have been inferred in the Black Hills of South Dakota. We suggest that the crustal-scale rheologic contrast across the Archean-Proterozoic suture, originally developed along the southern margin of Laurentia, and including the Cheyenne belt, facilitated widespread reactivation of that boundary during the Mazatzal orogeny. This finding emphasizes the degree to

Petrology and geochemistry of the ~2.9 Ga Itilliarsuk banded iron formation and associated supracrustal rocks, West Greenland

DEFF Research Database (Denmark)

Haugaard, Rasmus; Frei, Robert; Stendal, Henrik

2013-01-01

unconformably on a basement of tonalite–trondhjemite–granodiorite (TTG) lithologies. Felsic metagreywackes, meta-semipelites and thinly bedded ferruginous shales were identified intercalated with the Itilliarsuk BIF. Other associated rocks include metapelites, acidic metavolcanics and metagabbroic sills.......29. The associated supracrustal rocks in the study area have significantly higher, positive ɛNd(i) values. The 143Nd/144Nd in the Itilliarsuk BIF, therefore, contrasts world BIFs by exhibiting radiogenic, positive ɛNd(i) values in shallow seawaters where the REY's were controlled by a local, depleted continental...... crust, whereas the negative ɛNd(i) values found in the iron-rich layers suggest that the submarine hydrothermal source was influenced by an enriched mantle, possibly an older subcontinental lithospheric segment. The felsic metagreywackes are immature, first-cycle (SiO2/Al2O3 ∼ 4.4, [La/Yb >> 1]CHON...

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Growth and characterization of Ga(As,N) and (In,Ga)(As,N)

International Nuclear Information System (INIS)

Mussler, G.

2005-01-01

This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

2016-01-01

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Energy Technology Data Exchange (ETDEWEB)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.; Vennéguès, P. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Ngo, H. T.; Rosales, D.; Gil, B. [Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France); Hussain, S. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2 (France)

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Disc cutter wear and rock texture in hard rock TBM tunneling

International Nuclear Information System (INIS)

Koizumi, Yu; Tsusaka, Kimikazu; Tanimoto, Chikaosa; Nakagawa, Shigeo; Fujita, Naoya

2008-01-01

Disc cutter wear in TBM tunneling is caused by initial fragmentation of a solid rock face (the primary fragmentation) and fragmentation of residual rock pieces between a cutterhead and the face (the secondary fragmentation). In two projects through sedimentary and granitic rocks, the authors investigated the relationships between the rate of cutter wear caused by the primary fragmentation, point load index and the grain size and contents of abrasive minerals. As a result, it was found that the tensile strength and the mineral contents of rocks significantly influenced the cutter wear in both projects and thus it is necessary to take into account of rock type. (author)

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Directory of Open Access Journals (Sweden)

Chee-Keong Tan

2015-01-01

Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

Directory of Open Access Journals (Sweden)

Derang Cao

2017-11-01

Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

Rocks Can Wow? Yes, Rocks Can Wow!

Science.gov (United States)

Hardman, Sally; Luke, Sue

2016-01-01

Rocks and fossils appear in the National Curriculum of England science programmes of study for children in year 3 (ages 7-8). A frequently asked question is "How do you make the classification of rocks engaging?" In response to this request from a school, a set of interactive activities was designed and organised by tutors and students…

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

Science.gov (United States)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

InGaN/GaN quantum well improved by in situ SiN{sub x} pretreatment of GaN template

Energy Technology Data Exchange (ETDEWEB)

Huang, Demeng; Wu, Zhengyuan; Fang, Zhilai [Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University (China)

2016-12-15

In situ SiN{sub x} pretreatment was employed to modify the growth behavior and optical properties of InGaN/GaN quantum wells (QWs). With moderate SiN{sub x} pretreatment surface smoothness of InGaN/GaN QWs was improved and attributed to enhanced layer growth by Ga surfactant effect. Significant increase of photoluminescence peak intensity and relatively uniform and bright cathodoluminescence images were observed, which were attributed to the improvement in crystalline quality and strain reduction for the InGaN/GaN QWs with moderate SiN{sub x} pretreatment. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

Energy Technology Data Exchange (ETDEWEB)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

International Nuclear Information System (INIS)

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

2012-01-01

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures

International Nuclear Information System (INIS)

Kong, X.; Trampert, A.; Guo, X.X.; Kolovos-Vellianitis, D.; Daeweritz, L.; Ploog, K.H.

2005-01-01

We report on the microstructure of (Ga,Mn)As digital ferromagnetic heterostructures grown on GaAs (001) substrates by low-temperature molecular-beam epitaxy. The Mn concentration and the As 4 /Ga beam equivalent pressure (BEP) ratio are varied in the samples containing periods of Mn sheets separated by thin GaAs spacer layers. Transmission electron microscopy studies reveal that decreasing the Mn doping concentration and reducing the BEP ratio lead to smaller composition fluctuations of Mn and more homogeneous (Ga,Mn)As layers with abrupt interfaces. Planar defects are found as the dominant defect in these heterostructures and their density is related to the magnitude of the composition fluctuation. These defects show a noticeable anisotropy in the morphologic distribution parallel to the orthogonal [110] and [110] direction. Along the [110] direction, they are stacking faults, which are preferentially formed in V-shaped pairs and nucleate at the interfaces between (Ga,Mn)As and GaAs layers. Along the [110] direction, the planar defects are isolated thin twin lamellae. The character of the planar defects and their configuration are analyzed in detail

Diffuse scattering from the liquid-vapor interfaces of dilute Bi:Ga, Tl:Ga, and Pb:Ga alloys

International Nuclear Information System (INIS)

Li Dongxu; Jiang Xu; Rice, Stuart A.; Lin Binhua; Meron, Mati

2005-01-01

As part of a study of the in-plane wave-vector (q xy ) dependence of the effective Hamiltonian for the liquid-vapor interface, H(q), the wave-vector dependences of diffuse x-ray scattering from the liquid-vapor interfaces of dilute alloys of Bi in Ga, Tl in Ga, and Pb in Ga have been measured. In these dilute alloys the solute component segregates as a monolayer that forms the outermost stratum of the liquid-vapor interfaces, and the density distribution along the normal to the interface is stratified. Over the temperature ranges that the alloy interfaces were studied, the Tl and Pb monolayers exhibit both crystalline and liquid phases while the Bi monolayer is always liquid. The diffuse scattering from the liquid-vapor interfaces of these alloys displays interesting differences with that from the liquid-vapor interface of pure Ga. The presence of a segregated monolayer of solute in the liquid-vapor interface of the alloy appears to slightly suppress the fluctuations in an intermediate wave-vector range in a fashion that preserves the validity of the macroscopic capillary wave model to smaller wavelengths than in pure liquid Ga, and there is an increase in diffuse scattering when the Tl and Pb monolayers melt. The surface intrinsic roughness from fitting the wave-vector dependence of surface tension is 5.0 pm for the Tl:Ga alloy and 1.4 pm for the Bi:Ga alloy. Also, a mode of excitation that contributes to diffuse scattering from the liquid-vapor interface of Pb in Ga, but does not contribute to diffuse scattering from the liquid-vapor interface of Ga, has been identified. It is proposed that this mode corresponds to the separation of the Pb and Ga layers in the regime 1 nm -1 ≤q xy ≤10 nm -1

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Rock Physics

DEFF Research Database (Denmark)

Fabricius, Ida Lykke

2017-01-01

Rock physics is the discipline linking petrophysical properties as derived from borehole data to surface based geophysical exploration data. It can involve interpretation of both elastic wave propagation and electrical conductivity, but in this chapter focus is on elasticity. Rock physics is based...... on continuum mechanics, and the theory of elasticity developed for statics becomes the key to petrophysical interpretation of velocity of elastic waves. In practice, rock physics involves interpretation of well logs including vertical seismic profiling (VSP) and analysis of core samples. The results...

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

Mineral and rock chemistry of Mata da Corda Kamafugitic Rocks (Minas Gerais State, Brazil)

International Nuclear Information System (INIS)

Albuquerque Sgarbi, Patricia B. de; Valenca, Joel G.

1995-01-01

The volcanic rocks of the Mata da Corda Formation (Upper Cretaceous) in Minas Gerais, Brazil, are mafic potassic to ultra potassic rocks of kamafugitic affinity containing essentially clinopyroxenes, perovskite, magnetite and occasionally olivine, phlogopite, melilite pseudomorphs and apatite. The felsic phases are kalsilite and/or leucite pseudomorphs. The rocks are classified as mafitites, leucitites and kalsilitites. The analysis of the available data of the rocks studied, based on the relevant aspects of the main proposals for the classification of alkaline mafic to ultramafic potassic rocks leads to the conclusion that Sahama's (1974) proposal to divide potassium rich alkaline rocks in two large families is the one to which the Mata da Corda rocks adapt best. According to this and the data in the literature on the mineralogy and mineral and rock chemistries of the other similar occurrences, these rocks may be interpreted as alkaline potassic to ultra potassic rocks of hamafugitic affinity. 11 figs., 5 tabs

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

International Nuclear Information System (INIS)

Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

2014-01-01

The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

Gas sensing with AlGaN/GaN 2DEG channels

NARCIS (Netherlands)

Offermans, P.; Vitushinsky, R.; Crego-Calama, M.; Brongersma, S.H.

2011-01-01

AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

2007-04-23

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

International Nuclear Information System (INIS)

Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

2007-01-01

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

Gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga. Magnetic and solid state NMR-spectroscopic characterization

Energy Technology Data Exchange (ETDEWEB)

Heletta, Lukas; Seidel, Stefan; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Benndorf, Christopher [Leipzig Univ. (Germany). Inst. fuer Mineralogie, Kristallographie und Materialwissenschaften; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics

2017-10-01

The gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga have been synthesized by arc-melting of the elements followed by different annealing sequences to improve phase purity. The samples have been studied by powder X-ray diffraction. The structures of Lu{sub 0.97}Rh{sub 2}Ga{sub 1.03} (Fm3m, a=632.94(5) pm, wR2=0.0590, 46 F{sup 2} values, seven variables) and Sc{sub 0.88}Rh{sub 2}Ga{sub 1.12} (a=618.91(4) pm, wR2=0.0284, 44 F{sup 2} values, six variables) have been refined from single crystal X-ray diffractometer data. Both gallides show structural disorder through Lu/Ga and Sc/Ga mixing. Temperature dependent magnetic susceptibility measurements showed Pauli paramagnetism for ScRh{sub 2}Ga, ScPd{sub 2}Ga, and LuRh{sub 2}Ga and Curie-Weiss paramagnetism for TmRh{sub 2}Ga. {sup 45}Sc and {sup 71}Ga solid state MAS NMR spectroscopic investigations of the Sc containing compounds confirmed the site mixing effects typically observed for Heusler phases. The data indicate that the effect of mixed Sc/Ga occupancy is significantly stronger in ScRh{sub 2}Ga than in ScPd{sub 2}Ga.

Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2003-11-01

A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

Science.gov (United States)

Majumdar, Shubhankar; Das, S.; Biswas, D.

2015-08-01

Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

International Nuclear Information System (INIS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-01-01

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

Energy Technology Data Exchange (ETDEWEB)

Gao, Qingxue [School of Physics, Shandong University, Jinan, 250100 (China); Liu, Rong [Department of Fundamental Theories, Shandong Institute of Physical Education and Sports, Jinan 250063 (China); Xiao, Hongdi, E-mail: hdxiao@sdu.edu.cn [School of Physics, Shandong University, Jinan, 250100 (China); Cao, Dezhong; Liu, Jianqiang; Ma, Jin [School of Physics, Shandong University, Jinan, 250100 (China)

2016-11-30

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

International Nuclear Information System (INIS)

Pérez-Tomás, A.; Fontserè, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

2013-01-01

The vertical bulk (drain-bulk) current (I db ) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I db (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E a ), the (soft or destructive) vertical breakdown voltage (V B ), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E a = 0.35 eV at T = 25–300 °C; V B = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E a = 2.5 eV at T > 265 °C; V B > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E a = 0.35 eV at T > 150 °C; V B = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

Science.gov (United States)

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

Rock History and Culture

OpenAIRE

Gonzalez, Éric

2013-01-01

Two ambitious works written by French-speaking scholars tackle rock music as a research object, from different but complementary perspectives. Both are a definite must-read for anyone interested in the contextualisation of rock music in western popular culture. In Une histoire musicale du rock (i.e. A Musical History of Rock), rock music is approached from the point of view of the people – musicians and industry – behind the music. Christophe Pirenne endeavours to examine that field from a m...

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

Anisotropy of out-of-phase magnetic susceptibility of rocks as a tool for direct determination of magnetic subfabrics of some minerals: an introductory study

Czech Academy of Sciences Publication Activity Database

Hrouda, F.; Chadima, Martin; Ježek, J.; Pokorný, J.

2017-01-01

Roč. 208, č. 1 (2017), s. 385-402 ISSN 0956-540X R&D Projects: GA AV ČR IAAX00130801 Institutional support: RVO:67985831 Keywords : magnetic and electrical properties * magnetic fabrics and anisotropy * magnetic mineralogy and petrology * rock and mineral magnetism Subject RIV: DB - Geology ; Mineralogy OBOR OECD: Geology Impact factor: 2.414, year: 2016

Dry Sliding Wear Charactristics of Aluminum 6061-T6, Magnesium AZ31 and Rock Dust Composite

Science.gov (United States)

Balachandar, R.; Balasundaram, R.; Rajkumar, G.

2018-02-01

In recent years, the use of aluminum composite is gaining popularity in a wide range of applications like automobiles, aerospace and constructions (both interior & exterior) panels etc., due to its high strength, low density characteristics. Various reinforcing materials are used with aluminum 6061-T6 in order to have better mechanical properties. The addition of 0.3% of magnesium AZ31 will increase the ultimate tensile strength by 25 %. The reinforcement of rock dust will decrease the density. Hence, in order to have an advantages of magnesium AZ31 and rock dust, in this work, these two constitutes are varied from 1% to 2% on the base material of Al6061-T6 in stir casting. To evaluate the wear characteristics, Pin on disc is used in these composites. The input parameters are speed, time & load. The output response is wear. To minimize the number of experiments, L9 orthogonal array is used. The test results showed that a composite of 97% of Al (6061-T6), 1% Mg (AZ31) & 2 % of rock dust produced less wear. To find the best value of operating parameter for each sample, ANN-GA is used.

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

Science.gov (United States)

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

2001-05-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

2014-12-15

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

Directory of Open Access Journals (Sweden)

G. Naresh-Kumar

2014-12-01

Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Sarcoptes mite epidemiology and treatment in African buffalo (Syncerus caffer calves captured for translocation from the Kafue game management area to game ranches

Directory of Open Access Journals (Sweden)

Munyeme Musso

2010-06-01

Full Text Available Abstract Background In Zambia, translocation of wildlife from National Parks to private owned game ranches demands that only animals free of infectious diseases that could adversely affect the expansion of the wildlife industry should be translocated to game ranches. Sarcoptes mange (Sarcoptes scarbiei has been involved in the reduction of wildlife populations in some species. Results Sarcoptes mange (Sarcoptes scarbiei was detected and eradicated from two herds of African buffalo (Syncerus caffer calves captured in the Kafue GMA in July 2004 and August 2005. The overall prevalence was estimated at 89.5% (77/86. Sex had no influence on the occurrence and severity of the disease. Of the 86 calves used in the study, 72.1% had good body condition scores, 20.9% were fair and 7.0% were poor. Of the 77 infected calves, 53.2% were mildly infected, 28.6% were moderately and 18.2% were severely infected. Body condition score was correlated to the severity of the infection (r = 0.72, p n = 86 at capture. Eradication of Sarcoptes mites from the entire herd using ivermetcin was dependant on the severity of the infection. The overall ability of ivermectin to clear the infection after the first treatment was estimated at 81.8% (n = 77. It increased to 94.8% and 100% after the second and third treatments respectively. Conclusion This is the first report on the epidemiology and treatment of Sarcoptes mange in African buffaloes in Zambia. This study improves our understanding about Sarcoptes scabiei epidemiology and treatment which will have further applications for the safe animal translocation.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

Directory of Open Access Journals (Sweden)

Nigamananda Samal

2010-02-01

Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

Self-organized formation of GaSb/GaAs quantum rings.

Science.gov (United States)

Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

2008-12-19

Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

International Nuclear Information System (INIS)

Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

2002-01-01

In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

Rapid formation of rock armour for soil - rock fragment mixture during simulated rainfall

Science.gov (United States)

Poultney, E.; McGrath, G. S.; Hinz, C.

2009-04-01

Preventing erosion is an important issue in disturbed semi-arid and arid landscapes. This is in particular of highest importance for mining companies while undertaking land rehabilitation. An onsite investigation of the impact of surface rock fragments on erosion was conducted at Telfer goldmine in the Great Sandy Desert, Western Australia. The study site is a waste rock dump designed to mimic the concave slope of a natural mesa to both discourage erosion and blend in with its natural surroundings. Four treatments were used to construct the slope: two are topsoil mixed with rock fragments, and two are unmixed topsoil. A field study investigating erosion rills, particle size distribution, rock fragment coverage surface roughness and vegetation was carried out to determine changes down and across slope. The treatments constructed by mixing topsoil and rock fragments are more stable and show rock fragment distributions that more closely resemble patterns found on natural mesas surrounding Telfer. A controlled study using trays of topsoil mixed with rock fragment volumes of 50%, 60%, 70% and 80% were used to investigate how varying mixtures of rock fragments and topsoil erode using rainfall intensities between 20 and 100 mm h-1. Two runs of 25 minutes each were used to assess the temporal evolution of rock armouring. Surface coverage results converged for the 50%, 60% and 70% mixtures after the first run to coverage of about 90%, suggesting that fine sediment proportion does not affect rate and degree of rock armouring.

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

International Nuclear Information System (INIS)

Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

2012-01-01

The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

Pressure dependent elastic and structural (B3-B1) properties of Ga based monopnictides

International Nuclear Information System (INIS)

Varshney, Dinesh; Joshi, Geetanjali; Varshney, Meenu; Shriya, Swarna

2010-01-01

By formulating an effective interionic interaction potential that incorporates the long-range Coulomb, the covalency effects, the charge transfer caused by the deformation of the electron shells of the overlapping ions, the Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbour ions and the van der Waals (vdW) interaction, the pressure dependent elastic and thermodynamical properties of the III-V semiconductors as GaY (Y = N, P, As) are studied. The estimated values of phase transition pressure of GaY (Y = N, P, As) are in reasonably good agreement with the available data on the phase transition pressures (P t = 41, 22, 17 GPa). The vast volume discontinuity in pressure-volume phase diagram identifies a structural phase transition from zinc-blende (B3) to rock salt (B1) structure. Later on, the Poisson's ratio ν, the ratio R S/B of S (Voigt averaged shear modulus) over B (bulk modulus), elastic anisotropy parameter, elastic wave velocity, average wave velocity and Debye temperature as functions of pressure is calculated. From Poisson's ratio and the ratio R S/B it is inferred that GaY (Y = N, P, As) is brittle [ductile] in zinc-blende (B3) [Sodium Chloride (B1)] phase. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of ductile (brittle) nature of GaY compounds and still awaits experimental confirmations.

Modeling elk and bison carrying capacity for Great Sand Dunes National Park, Baca National Wildlife Refuge, and The Nature Conservancy's Medano Ranch, Colorado

Science.gov (United States)

Wockner, Gary; Boone, Randall; Schoenecker, Kathryn A.; Zeigenfuss, Linda C.

2015-01-01

Great Sand Dunes National Park and Preserve and the neighboring Baca National Wildlife Refuge constitute an extraordinary setting that offers a variety of opportunities for outdoor recreation and natural resource preservation in the San Luis Valley of Colorado. Adjacent to these federal lands, the Nature Conservancy (TNC) manages the historic Medano Ranch. The total land area of these three conservation properties is roughly 121,500 hectares (ha). It is a remote and rugged area in which resource managers must balance the protection of natural resources with recreation and neighboring land uses. The management of wild ungulates in this setting presents challenges, as wild ungulates move freely across public and private landscapes.

Development of artificial soft rock

International Nuclear Information System (INIS)

Kishi, Kiyoshi

1995-01-01

When foundation base rocks are deeper than the level of installing structures or there exist weathered rocks and crushed rocks in a part of base rocks, often sound artificial base rocks are made by substituting the part with concrete. But in the construction of Kashiwazaki Kariwa Nuclear Power Station of Tokyo Electric Power Co., Inc., the foundation base rocks consist of mudstone, and the stiffness of concrete is large as compared with the surrounding base rocks. As the quality of the substituting material, the nearly same stiffness as that of the surrounding soft rocks and long term stability are suitable, and the excellent workability and economical efficiency are required, therefore, artificial soft rocks were developed. As the substituting material, the soil mortar that can obtain the physical property values in stable form, which are similar to those of Nishiyama mudstone, was selected. The mechanism of its hardening and the long term stability, and the manufacturing plant are reported. As for its application to the base rocks of Kashiwazaki Kariwa Nuclear Power Station, the verification test at the site and the application to the base rocks for No. 7 plant reactor building and other places are described. (K.I.)

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

2017-01-01

Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Petrology and geochemistry of intrusive rocks in Some-Ahani and Ferezneh prospect areas, east of Sangan mine, Khaf (Southeast of Mashhad

Directory of Open Access Journals (Sweden)

Nazi Mazhari

2017-03-01

Full Text Available The Some-Ahani and Ferezneh prospect areas are two of the eastern anomalies ofKhaf’s Sangan iron mine in Khorasan Razavi province. Biotite monzonite porphyry andbiotite syenogranite Tertiary plutons occurred in the area of study. Due to the severe alteration of biotite monzonite porphyry intrusion, geochemical studies have beenfocused on the biotite syenogranite. It is chemically peraluminous, moderate to highpotassic and magnesian and its tectonic setting is of post orogenic. In both A-typegranites and in differentiated peralkaline I-type granitic rocks: negative Eu anomaly,mild enrichment of LREE, positive, relatively flat HREE pattern, negative anomalies ofBa, Sr, La, Ce, Ti, and large amount of Ga (16- 24 ppm are the same. On the basis ofmajor oxide values and SiO2 vs. FeOt/MgO ratio, the prospect area samples fall in therange of I-type granites. Variations in the minor and trace elements in all samplesindicate fractional crystallization in separation of plagioclase, alkali feldspar and biotite,generated by fractional crystallization from an I-type granitic magma poor in P. Increasein HFS elements such as Ga and Nb is associated with the differentiation of thesegranites. Comparison of the intrusions studied with Bermani and Sarkhar rocks insoutheast Sangan shows that variations in the major, minor and rare earth elements aresimilar to each other and to those of I-type granites, which can be differentiated by various degrees of partial melting of andesite and dacite protolith or are produced by atwo-stage process of remelting intermediate rocks.

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

International Nuclear Information System (INIS)

Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

2011-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

Science.gov (United States)

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Impact ionization of excitons in electric field of GaN and quantum wells of GaN/AlGaN

International Nuclear Information System (INIS)

Nel'son, D.K.; Yakobson, M.A.; Kagan, V.D.; Gil, B.; Grandjean, N.; Beaumont, B.; Massier, J.; Gibart, P.

2001-01-01

The effect of the exciton states impact ionization in the GaN exploit films and in the GaN/AlGaN structures with quantum wells is studied. The study was carried out through the optical method, based on the exciton photoluminescence quenching by applying the electric field. It is established that in the process of the electrons relaxation by energy and pulse the scattering on the admixtures prevails over the scattering on the acoustic phonons. The average length of the hot electrons free run is evaluated. The average length of the hot electrons free run in the GaN/AlGaN wells proved to be by the value order higher than in the GaN epitaxial films, which is conditioned by decrease in the probability of the electrons scattering in the two-dimensional case [ru

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

OpenAIRE

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

2001-01-01

Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

Photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation

Science.gov (United States)

Tang, Xi; Li, Baikui; Chen, Kevin J.; Wang, Jiannong

2018-05-01

The photocurrent characteristics of metal–AlGaN/GaN Schottky-on-heterojunction diodes were investigated. When the photon energy of incident light was larger than the bandgap of GaN but smaller than that of AlGaN, the alternating-current (ac) photocurrent measured using lock-in techniques increased with the chopper frequency. Analyzing the generation and flow processes of photocarriers revealed that the photocurrent induced by GaN interband excitation featured a transient behavior, and its direction reversed when the light excitation was removed. The abnormal dependence of the measured ac photocurrent magnitude on the chopper frequency was explained considering the detection principles of a lock-in amplifier.

Detection of Babesia spp. in free-ranging Pukus, Kobus vardonii, on a game ranch in Zambia.

Science.gov (United States)

Munang'andu, Hetron Mweemba; Munyeme, Musso; Nambota, Andrew Mubila; Nalubamba, King Shimumbo; Siamudaala, Victor M

2011-12-01

Babesia spp. were detected from 4 asymptomatic pukus captured on a game ranch in central Zambia in October 2008. Blood smears were examined in 4 species of aymptomatic free-ranging antelopes, namely the puku (Kobus vordanii), reedbuck (Redunca arundinum), bushbuck (Tragelaphus sylvaticus), and kudu (Tragelaphus strepsiceros), and showed the presence of Babesia parasites only in the puku. In the puku, the prevalence of babesiosis was estimated at 33.3% (n = 12), while the overall prevalence in all examined animals was 8.5% (n = 47). The parasites showed morphological characteristics of paired ring-like stages with the length varying between 1.61 µm and 3.02 µm (mean = 2.12 µm, n = 27; SD = 0.76 µm). Both the infected and non-infected pukus showed good body condition scores (BCS), while the dominant tick species detected from all animals were Rhipicephalus appendiculatus, Rhipicephalus spp., and Boophilus spp. To our knowledge this is the first report of Babesia spp. infection in pukus in Zambia. These findings suggest that wildlife could play an important role in the epidemiology of babesiosis in Zambia.

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Influence of annealing condition and multicycle AlGaAs/GaAs structures on the Al0.26Ga0.74As surface morphology

International Nuclear Information System (INIS)

Wei, Wenzhe; Wang, Yi; Guo, Xiang; Luo, Zijiang; Zhao, Zhen; Zhou, Haiyue; Ding, Zhao

2015-01-01

Highlights: • STM study on the change of AlGaAs surface morphology with varying annealing conditions. • Interesting phenomenon that the subsequent sample has more surface roughness than the previous samples do. A physical model was proposed to explain why the multi-runs growth can increase surface roughness. • The annealing conditions of AlGaAs/GaAs surface were proposed. - Abstract: The influence of annealing temperature, As 4 beam equivalent pressure and multi-runs growth on AlGaAs/GaAs structures was investigated. The real space ultrahigh vacuum scanning tunneling microscopy images showed that AlGaAs/GaAs surface morphology greatly depends on annealing conditions and initial state of surface. The reasons of the surface phenomenon are proposed, and a physical model was proposed to explain why the multi-runs growth structures can increase AlGaAs surface roughness. The reasonable preparation conditions for AlGaAs/GaAs structures were proposed

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Energy Technology Data Exchange (ETDEWEB)

Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Directory of Open Access Journals (Sweden)

Yanli Liu

2018-01-01

Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

Mineralogy and petrology of cretaceous subsurface lamproite sills, southeastern Kansas, USA

Science.gov (United States)

Cullers, R.L.; Dorais, M.J.; Berendsen, P.; Chaudhuri, Sambhudas

1996-01-01

Cores and cuttings of lamproite sills and host sedimentary country rocks in southeastern Kansas from up to 312 m depth were analyzed for major elements in whole rocks and minerals, certain trace elements in whole rocks (including the REE) and Sr isotopic composition of the whole rocks. The lamproites are ultrapotassic (K2O/Na2O = 2.0-19.9), alkalic [molecular (K2O/Na2O)/Al2O3 = 1.3-2.8], enriched in mantle-incompatible elements (light REE, Ba, Rb, Sr, Th, Hf, Ta) and have nearly homogeneous initial Sr isotopic compositions (0.707764-0.708114). These lamproites could have formed by variable degrees of partial melting of harzburgite country rock and cross-cutting veins composed of phlogopite, K-Ti richterite, titanite, diopside, K-Ti silicates, or K-Ba-phosphate under high H2O/CO2 ratios and reducing conditions. Variability in melting of veins and wall rock and variable composition of the metasomatized veins could explain the significantly different composition of the Kansas lamproites. Least squares fractionation models preclude the derivation of the Kansas lamproites by fractional crystallization from magmas similar in composition to higher silica phlogopite-sanidine lamproites some believe to be primary lamproite melts found elsewhere. In all but one case, least squares fractionation models also preclude the derivation of magmas similar in composition to any of the Kansas lamproites from one another. A magma similar in composition to the average composition of the higher SiO2 Ecco Ranch lamproite (237.5-247.5 m depth) could, however, have marginally crystallized about 12% richterite, 12% sanidine, 7% diopside and 6% phlogopite to produce the average composition of the Guess lamproite (305-312 m depth). Lamproite from the Ecco Ranch core is internally fractionated in K2O, Al2O3, Ba, MgO, Fe2O3, Co and Cr most likely by crystal accumulation-removal of ferromagnesian minerals and sanidine. In contrast, the Guess core (305-312 m depth) has little fractionation

Teaching the Rock Cycle with Ease.

Science.gov (United States)

Bereki, Debra

2000-01-01

Describes a hands-on lesson for teaching high school students the concept of the rock cycle using sedimentary, metamorphic, and igneous rocks. Students use a rock cycle diagram to identify pairs of rocks. From the rock cycle, students explain on paper how their first rock became the second rock and vice versa. (PVD)

Recreating Rocks

DEFF Research Database (Denmark)

Posth, Nicole R

2008-01-01

Nicole Posth and colleagues spent a month touring South African rock formations in their quest to understand the origin of ancient iron and silicate layers.......Nicole Posth and colleagues spent a month touring South African rock formations in their quest to understand the origin of ancient iron and silicate layers....

Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

International Nuclear Information System (INIS)

Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

1990-01-01

The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

Hydrological characteristics of Japanese rock

International Nuclear Information System (INIS)

Ijiri, Yuji; Sawada, Atsushi; Akahori, Kuniaki

1999-11-01

It is crucial to evaluate the hydrogeological characteristics of rock in Japan in order to assess the performance of geosphere. This report summarizes the hydrogeological characteristics of various rock types obtained from broad literature surveys and the fields experiments at the Kamaishi mine in northern Japan and at the Tono mine in central Japan. It is found that the hydraulic conductivity of rock mass ranges from 10 -9 m/s to 10 -8 m/s, whereas the hydraulic conductivity of fault zone ranges from 10 -9 m/s to 10 -3 m/s. It is also found that the hydraulic conductivity tends to decrease with depth. Therefore, the hydraulic conductivity of rock mass at the depth of a repository will be smaller than above values. From the investigations at outcrops and galleries throughout the country, fractures are observed as potential pathways in all rock types. All kinds of crystalline rocks and pre-Neogene sedimentary rocks are classified as fractured media where fracture flow is dominant. Among these rocks, granitic rock is considered the archetype fractured media. On the other hand, andesite, tuff and Neogene sedimentary rocks are considered as intermediate between fractured media and porous media where flow in fractures as well as in rock matrix are significant. (author)

Development and Engineering Design in Support of "Rover Ranch": A K-12 Outreach Software Project

Science.gov (United States)

Pascali, Raresh

2003-01-01

A continuation of the initial development started in the summer of 1999, the body of work performed in support of 'ROVer Ranch' Project during the present fellowship dealt with the concrete concept implementation and resolution of the related issues. The original work performed last summer focused on the initial examination and articulation of the concept treatment strategy, audience and market analysis for the learning technologies software. The presented work focused on finalizing the set of parts to be made available for building an AERCam Sprint type robot and on defining, testing and implementing process necessary to convert the design engineering files to VRML files. Through reverse engineering, an initial set of mission critical systems was designed for beta testing in schools. The files were created in ProEngineer, exported to VRML 1.0 and converted to VRML 97 (VRML 2.0) for final integration in the software. Attributes for each part were assigned using an in-house developed JAVA based program. The final set of attributes for each system, their mutual interaction and the identification of the relevant ones to be tracked, still remain to be decided.

Maximum volume cuboids for arbitrarily shaped in-situ rock blocks as determined by discontinuity analysis—A genetic algorithm approach

Science.gov (United States)

Ülker, Erkan; Turanboy, Alparslan

2009-07-01

The block stone industry is one of the main commercial use of rock. The economic potential of any block quarry depends on the recovery rate, which is defined as the total volume of useful rough blocks extractable from a fixed rock volume in relation to the total volume of moved material. The natural fracture system, the rock type(s) and the extraction method used directly influence the recovery rate. The major aims of this study are to establish a theoretical framework for optimising the extraction process in marble quarries for a given fracture system, and for predicting the recovery rate of the excavated blocks. We have developed a new approach by taking into consideration only the fracture structure for maximum block recovery in block quarries. The complete model uses a linear approach based on basic geometric features of discontinuities for 3D models, a tree structure (TS) for individual investigation and finally a genetic algorithm (GA) for the obtained cuboid volume(s). We tested our new model in a selected marble quarry in the town of İscehisar (AFYONKARAHİSAR—TURKEY).

Rock Goes to School on Screen: A Model for Teaching Non-"Learned" Musics Derived from the Films "School of Rock" (2003) and "Rock School" (2005)

Science.gov (United States)

Webb, Michael

2007-01-01

What can be learned from two films with "rock" and "school" in their titles, about rock in school and about music and schooling more broadly? "School of Rock" (2003), a "family comedy," and "Rock School" (2005), a documentary, provoke a range of questions, ideological and otherwise, surrounding the inclusion of rock in formal instructional…

Thermal environment characterization for the bovine cattle ranching in the Valle del Cauca, Colombia

Directory of Open Access Journals (Sweden)

Raúl Andres Molina Benavides

2016-10-01

Full Text Available The influence of climate on animal behavior has been demonstrated for many years. Climatic variables such as temperature (T, ° C, relative humidity (RH, %, solar radiation (SR, W / m2 and wind speed (WS, m / s, outside their normal range, can displace ruminants of their comfort zone, which can results in negative impact on their productivity and reproduction behavior. In order to characterize the thermal environment of bovine cattle ranching in the Valle del Cauca department, two biometeorological indexes (heat load index for dairy cows and meat cattle were performed to develop an animal - environment relationship. The indexes were applied to the most representative Valle del Cauca department climatic ranges (T = 20-35; RH = 60-100; WS = 0-10, finding that for dairy cows under the mentioned conditions of T> 23, RH> 80 and 0 WS, starting to show signals of heat stress, while for beef cattle starts with T> 25, RH> 60 and WS <1.5. In conclusion, these indexes are useful tools to determine the degree of heat stress that may occur on farms during certain times of day for certain months of the year, helping to plan actions to control its effect in cattle and subsequently, mitigate the impacts on their productive and reproductive performance.

Sustainable Cattle Ranching in Practice: Moving from Theory to Planning in Colombia's Livestock Sector

Science.gov (United States)

Lerner, Amy M.; Zuluaga, Andrés Felipe; Chará, Julián; Etter, Andrés; Searchinger, Timothy

2017-08-01

A growing population with increasing consumption of milk and dairy require more agricultural output in the coming years, which potentially competes with forests and other natural habitats. This issue is particularly salient in the tropics, where deforestation has traditionally generated cattle pastures and other commodity crops such as corn and soy. The purpose of this article is to review the concepts and discussion associated with reconciling food production and conservation, and in particular with regards to cattle production, including the concepts of land-sparing and land-sharing. We then present these concepts in the specific context of Colombia, where there are efforts to increase both cattle production and protect tropical forests, in order to discuss the potential for landscape planning for sustainable cattle production. We outline a national planning approach, which includes disaggregating the diverse cattle sector and production types, identifying biophysical, and economic opportunities and barriers for sustainable intensification in cattle ranching, and analyzing areas suitable for habitat restoration and conservation, in order to plan for both land-sparing and land-sharing strategies. This approach can be used in other contexts across the world where there is a need to incorporate cattle production into national goals for carbon sequestration and habitat restoration and conservation.

Sustainable Cattle Ranching in Practice: Moving from Theory to Planning in Colombia's Livestock Sector.

Science.gov (United States)

Lerner, Amy M; Zuluaga, Andrés Felipe; Chará, Julián; Etter, Andrés; Searchinger, Timothy

2017-08-01

A growing population with increasing consumption of milk and dairy require more agricultural output in the coming years, which potentially competes with forests and other natural habitats. This issue is particularly salient in the tropics, where deforestation has traditionally generated cattle pastures and other commodity crops such as corn and soy. The purpose of this article is to review the concepts and discussion associated with reconciling food production and conservation, and in particular with regards to cattle production, including the concepts of land-sparing and land-sharing. We then present these concepts in the specific context of Colombia, where there are efforts to increase both cattle production and protect tropical forests, in order to discuss the potential for landscape planning for sustainable cattle production. We outline a national planning approach, which includes disaggregating the diverse cattle sector and production types, identifying biophysical, and economic opportunities and barriers for sustainable intensification in cattle ranching, and analyzing areas suitable for habitat restoration and conservation, in order to plan for both land-sparing and land-sharing strategies. This approach can be used in other contexts across the world where there is a need to incorporate cattle production into national goals for carbon sequestration and habitat restoration and conservation.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

International Nuclear Information System (INIS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-01-01

Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Science.gov (United States)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and lattice images.

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

International Nuclear Information System (INIS)

He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

Compositional and structural characterisation of GaSb and GaInSb

International Nuclear Information System (INIS)

Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

2005-01-01

Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

Science.gov (United States)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Grinding into Soft, Powdery Rock

Science.gov (United States)

2004-01-01

This hole in a rock dubbed 'Clovis' is the deepest hole drilled so far in any rock on Mars. NASA's Mars Exploration Rover Spirit captured this view with its microscopic imager on martian sol 217 (Aug. 12, 2004) after drilling 8.9 millimeters (0.35 inch) into the rock with its rock abrasion tool. The view is a mosaic of four frames taken by the microscopic imager. The hole is 4.5 centimeters (1.8 inches) in diameter. Clovis is key to a developing story about environmental change on Mars, not only because it is among the softest rocks encountered so far in Gusev Crater, but also because it contains mineral alterations that extend relatively deep beneath its surface. In fact, as evidenced by its fairly crumbly texture, it is possibly the most highly altered volcanic rock ever studied on Mars. Scientific analysis shows that the rock contains higher levels of the elements sulfur, chlorine, and bromine than are normally encountered in basaltic rocks, such as a rock dubbed 'Humphrey' that Spirit encountered two months after arriving on Mars. Humphrey showed elevated levels of sulfur, chlorine, and bromine only in the outermost 2 millimeters (less than 0.1 inch) of its surface. Clovis shows elevated levels of the same elements along with the associated softness of the rock within a borehole that is 4 times as deep. Scientists hope to compare Clovis to other, less-altered rocks in the vicinity to assess what sort of water-based processes altered the rock. Hypotheses include transport of sulfur, chlorine, and bromine in water vapor in volcanic gases; hydrothermal circulation (flow of volcanically heated water through rock); or saturation in a briny soup containing the same elements. In this image, very fine-grained material from the rock has clumped together by electrostatic attraction and fallen into the borehole. NASA/JPL/Cornell/USGS

Magnetic properties of high-Ti basaltic rocks from the Krušné hory/Erzgebirge Mts. (Bohemia/Saxony), and their relation to mineral chemistry

Czech Academy of Sciences Publication Activity Database

Schnabl, Petr; Novák, Jiří Karel; Cajz, Vladimír; Lang, Miloš; Balogh, K.; Pécskay, Z.; Chadima, Martin; Šlechta, Stanislav; Kohout, Tomáš; Pruner, Petr; Ulrych, Jaromír

2010-01-01

Roč. 54, č. 1 (2010), s. 77-94 ISSN 0039-3169 R&D Projects: GA AV ČR IAA300130706 Institutional research plan: CEZ:AV0Z30130516 Keywords : high-Ti basaltic rocks * magnetic petrology * thermomagnetic experiments * Curie temperature variation * field-dependent susceptibility * Ohře/Eger Rift Subject RIV: DE - Earth Magnetism, Geodesy, Geography Impact factor: 1.123, year: 2010

Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

NARCIS (Netherlands)

Wittmann, B.; Golub, L. E.; Danilov, S. N.; Karch, J.; Reitmaier, C.; Kvon, Z. D.; Vinh, N. Q.; van der Meer, A. F. G.; Murdin, B.; Ganichev, S. D.

2008-01-01

The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN

High resolution x-ray diffraction analyses of GaN/LiGaO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Matyi, R.J. [Department of Materials Science and Engineering University of Wisconsin, Madison, WI (United States); Doolittle, W.A.; Brown, A.S. [School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA (United States)

1999-05-21

Lithium gallate (LiGaO{sub 2}) is gaining increasing attention as a potential substrate for the growth of the important semiconductor GaN. In order to better understand this material we have performed high-resolution double- and triple-axis x-ray diffraction analyses of both the starting LiGaO{sub 2} and GaN/LiGaO{sub 2} following epitaxial growth. A high-resolution triple-axis reciprocal space map of the substrate showed a sharp, well-defined crystal truncation rod and a symmetric streak of intensity perpendicular to q{sub 002}, suggesting high structural quality with mosaic spread. Triple-axis scans following GaN growth showed (1) the development of isotropic diffuse scatter around the LiGaO{sub 2} (002) reflection, (2) the presence of a semi-continuous intensity streak between the LiGaO{sub 2} (002) and GaN (0002) reflections, and (3) a compact pattern of diffuse scatter around the GaN (0002) reflection that becomes increasingly anisotropic as the growth temperature is increased. These results suggest that LiGaO{sub 2} permits the epitaxial growth of GaN with structural quality that may be superior to that observed when growth is performed on SiC or Al{sub 2}O{sub 3}. (author)

Osmium Isotopic Evolution of the Mantle Sources of Precambrian Ultramafic Rocks

Science.gov (United States)

Gangopadhyay, A.; Walker, R. J.

2006-12-01

The Os isotopic composition of the modern mantle, as recorded collectively by ocean island basalts, mid- oceanic ridge basalts (MORB) and abyssal peridotites, is evidently highly heterogeneous (γ Os(I) ranging from +25). One important question, therefore, is how and when the Earth's mantle developed such large-scale Os isotopic heterogeneities. Previous Os isotopic studies of ancient ultramafic systems, including komatiites and picrites, have shown that the Os isotopic heterogeneity of the terrestrial mantle can be traced as far back as the late-Archean (~ 2.7-2.8 Ga). This observation is based on the initial Os isotopic ratios obtained for the mantle sources of some of the ancient ultramafic rocks determined through analyses of numerous Os-rich whole-rock and/or mineral samples. In some cases, the closed-system behavior of these ancient ultramafic rocks was demonstrated via the generation of isochrons of precise ages, consistent with those obtained from other radiogenic isotopic systems. Thus, a compilation of the published initial ^{187}Os/^{188}Os ratios reported for the mantle sources of komatiitic and picritic rocks is now possible that covers a large range of geologic time spanning from the Mesozoic (ca. 89 Ma Gorgona komatiites) to the Mid-Archean (e.g., ca. 3.3 Ga Commondale komatiites), which provides a comprehensive picture of the Os isotopic evolution of their mantle sources through geologic time. Several Precambrian komatiite/picrite systems are characterized by suprachondritic initial ^{187}Os/^{188}Os ratios (e.g., Belingwe, Kostomuksha, Pechenga). Such long-term enrichments in ^{187}Os of the mantle sources for these rocks may be explained via recycling of old mafic oceanic crust or incorporation of putative suprachondritic outer core materials entrained into their mantle sources. The relative importance of the two processes for some modern mantle-derived systems (e.g., Hawaiian picrites) is an issue of substantial debate. Importantly, however, the

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

Science.gov (United States)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

International Nuclear Information System (INIS)

Rekaya, S.; Sfaxi, L.; Bru-Chevallier, C.; Maaref, H.

2011-01-01

InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density. The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E F ) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.

Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Oertel, Stefan

2012-07-01

This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

THM-coupled modeling of selected processes in argillaceous rock relevant to rock mechanics

International Nuclear Information System (INIS)

Czaikowski, Oliver

2012-01-01

Scientific investigations in European countries other than Germany concentrate not only on granite formations (Switzerland, Sweden) but also on argillaceous rock formations (France, Switzerland, Belgium) to assess their suitability as host and barrier rock for the final storage of radioactive waste. In Germany, rock salt has been under thorough study as a host rock over the past few decades. According to a study by the German Federal Institute for Geosciences and Natural Resources, however, not only salt deposits but also argillaceous rock deposits are available at relevant depths and of extensions in space which make final storage of high-level radioactive waste basically possible in Germany. Equally qualified findings about the suitability/unsuitability of non-saline rock formations require fundamental studies to be conducted nationally because of the comparatively low level of knowledge. The article presents basic analyses of coupled mechanical and hydraulic properties of argillaceous rock formations as host rock for a repository. The interaction of various processes is explained on the basis of knowledge derived from laboratory studies, and open problems are deduced. For modeling coupled processes, a simplified analytical computation method is proposed and compared with the results of numerical simulations, and the limits to its application are outlined. (orig.)

Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

International Nuclear Information System (INIS)

Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

2012-01-01

Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

Nd isotopes, U-Pb single grain and SHRIMP zircon ages from basement rocks of the Tocantin Province

International Nuclear Information System (INIS)

Fuck, R.A.; Dantas, E.L.; Pimentel, M.M.; Junges, S.L.; Moraes, R

2001-01-01

Large areas of the northern part of the Brasilia Belt, Tocantins Province, central Brazil, are underlain by basement granite-gneiss terrain and associated volcano-sedimentary sequences, as well as felsic and mafic-ultramafic intrusions. The basement rocks are covered by the late Paleoproterozoic-Mesoproterozoic rift-related Arai and Natividade groups and intruded by 1.77 to 1.58 Ga an orogenic granites of the Goias Tin Province (Pimentel and Botelho, 2001). To the southwest they are un conformably overlain by the low-grade late Proterozoic Paranoa Group, whereas to the east they are in faulted contact with the Neoproterozoic Bambui Group at the western edge of the Sao Francisco Craton. To the north they are covered by Phanerozoic sediments of the Parnaiba and Sanfranciscana basins. Despite their large extension, granite-gneiss and associated supracrustals of SE Tocantins and NE Goias are still poorly known. Previous regional Rb-Sr and K-Ar isotopic studies indicated dominant early Proterozoic ages and late Proterozoic cooling ages (Hasui, et al. 1980, Fernandes et al. 1982). More detailed studies in the Almas-Dianopolis area (Costa, 1984) came up with similar results, although the region was interpreted as underlain by Archean granite-greenstone terrain, following previous suggestions by Costa et al. (1976). Recent work recognized the presence of two suites of deformed granitoids (Cruz and Kuyumjian, 1996, 1998). The oldest suite intruded the supracrustals and comprises hornblende-bearing tonalite gneiss, with minor trondhjemite, granodiorite, and quartz diorite. The younger suite comprises oval shaped biotite-bearing tonalite, trondhjemite, and granodiorite intrusions. Both suites display low-K calc-alkaline affinity, the younger being more Al-rich. Both are interpreted as TTG suites and were dated at 2,2 Ga using U-Pb SHRIMP (Cruz et al 2000). In the Porto Nacional area, Gorayeb et al. (2000) determined single zircon Pb-evaporation ages of 2.15 Ga in granulites

GaAsP on GaP top solar cells

Science.gov (United States)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

1.88 Ga São Gabriel AMCG association in the southernmost Uatumã-Anauá Domain: Petrological implications for post-collisional A-type magmatism in the Amazonian Craton

Science.gov (United States)

Valério, Cristóvão da Silva; Macambira, Moacir José Buenano; Souza, Valmir da Silva; Dantas, Elton Luiz; Nardi, Lauro Valentim Stoll

2018-02-01

In the southernmost Uatumã-Anauá Domain, central Amazonian craton (Brazil), crop out 1.98 Ga basement inliers represented by (meta)leucosyenogranites and amphibolites (Igarapé Canoas Suite), 1.90-1.89 Ga high-K calc-alkaline granitoids (Água Branca Suite), a 1.88-1.87 Ga alkali-calcic A-type volcano-plutonic system (Iricoumé-Mapuera), Tonian SiO2-satured alkaline granitoids, 1.45-1.25 Ga orthoderived metamorphic rocks (Jauaperi Complex) and Orosirian-Upper Triassic mafic intrusions. New data on petrography, multielementar geochemistry, in situ zircon U-Pb ages and Nd and Hf isotopes of alkali-calcic A-type granites (São Gabriel Granite, Mapuera Suite) and related rocks are indicative of a 1.89-1.87 Ga volcano-plutonic system integrated to the São Gabriel AMCG association. Its magmatic evolution was controlled by the fractional crystallization combined with magma mixing and cumulation processes. Nd isotope values (εNdt values = - 3.71 to + 0.51 and Nd TDM model age = 2.44 to 2.12 Ga) and U-Pb inherited zircon crystals (2115 ± 22 Ma; 2206 ± 21 Ma; 2377 ± 17 Ma, 2385 ± 17 Ma) of the São Gabriel system indicate a large participation of Siderian-Rhyacian crust (granite-greenstones and granulites) and small contribution of Rhyacian mantelic magma. εHft values (+ 5.2 to - 5.8) and Hf TDM ages (3.27-2.14 Ga) also point to contribution of Paleoarchean-Rhyacian crustal melts and small participation of Siderian-Rhyacian mantle melts. Residual melts from the lower crust have been mixed with basaltic melts generated by partial melting of the subcontinental lithospheric mantle (peridotite) in a post-collisional setting at 1.89-1.87 Ga. The mafic melts of such a mixture could have been originated through partial melting of residual ocean plate fragments (eclogites) which ascended onto a residual mantle wedge (hornblende peridotite) and melted it, resulting in modified basaltic magma which, by underplating, led heat to the anatexis of the lower continental crust

Characterization of GaN/AlGaN epitaxial layers grown by ...

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical ... reported by introducing annealing of the GaN layer in nitrogen [5], Fe doping [6], .... [2] Y F Wu, S M Wood, R P Smith, S Sheppard, S T Allen, P Parikh and J Milligan,.

Seismic response of rock joints and jointed rock mass

International Nuclear Information System (INIS)

Ghosh, A.; Hsiung, S.M.; Chowdhury, A.H.

1996-06-01

Long-term stability of emplacement drifts and potential near-field fluid flow resulting from coupled effects are among the concerns for safe disposal of high-level nuclear waste (HLW). A number of factors can induce drift instability or change the near-field flow patterns. Repetitive seismic loads from earthquakes and thermal loads generated by the decay of emplaced waste are two significant factors. One of two key technical uncertainties (KTU) that can potentially pose a high risk of noncompliance with the performance objectives of 10 CFR Part 60 is the prediction of thermal-mechanical (including repetitive seismic load) effects on stability of emplacement drifts and the engineered barrier system. The second KTU of concern is the prediction of thermal-mechanical-hydrological (including repetitive seismic load) effects on the host rock surrounding the engineered barrier system. The Rock Mechanics research project being conducted at the Center for Nuclear Waste Regulatory Analyses (CNWRA) is intended to address certain specific technical issues associated with these two KTUs. This research project has two major components: (i) seismic response of rock joints and a jointed rock mass and (ii) coupled thermal-mechanical-hydrological (TMH) response of a jointed rock mass surrounding the engineered barrier system (EBS). This final report summarizes the research activities concerned with the repetitive seismic load aspect of both these KTUs

Radiative and non-radiative recombination in GaInN/GaN quantum wells

International Nuclear Information System (INIS)

Netzel, C.

2007-01-01

The studies presented in this thesis deal with the occurence of V defectsin GaInN/GaN quantum film structures grown by means of organometallic gas phase epitaxy, and the effects, which have the V defects respectively the GaInN quantum films on the V-defect facets on the emission and recombination properties of the whole GaInN/GaN quantum film structure. The V-defects themselves, inverse pyramidal vacancies with hexagonal base in the semiconductor layers, arise under suitable growth conditions around the percussion violations, which extend in lattice-mismatched growth of GaN on the heterosubstrates sapphire or silicon carbide starting in growth direction through the crystal. If GaInN layers are grown over V-defect dispersed layers on the (1-101) facets of the V defects and the (0001) facets, the growth front of the structure, different growth velocities are present, which lead to differently wide GaInN quantum films on each facets

Two-dimensional electron gas in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Khan, M.A.; Chen, Q.

1997-01-01

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. copyright 1997 American Vacuum Society