WorldWideScience

Sample records for robocon electrical interfacing

  1. RoboCon: Operator interface for robotic applications. Final report: RoboCon electrical interfacing -- system architecture, and Interfacing NDDS and LabView

    Energy Technology Data Exchange (ETDEWEB)

    Schempf, H.

    1998-04-30

    The first appendix contains detailed specifications of the electrical interfacing employed in Robocon. This includes all electrical signals and power requirement descriptions up to and including the interface entry points for external robots and systems. The reader is first presented with an overview of the overall Robocon electrical system, followed by sub-sections describing each module in detail. The appendices contain listings of power requirements and the electrical connectors and cables used, followed by an overall electrical system diagram. Custom electronics employed are also described. The Network Data Delivery Service (NDDS) is a real-time dissemination communications architecture which allows nodes on a network to publish data and subscribe to data published by other nodes while remaining anonymous. The second appendix explains how to facilitate a seamless interface between NDDS and LabView and provides sample source code used to implement an NDDS consumer which writes a string to a socket.

  2. RoboCon: A general purpose telerobotic control center

    Energy Technology Data Exchange (ETDEWEB)

    Draper, J.V.; Noakes, M.W. [Oak Ridge National Lab., TN (United States). Robotics and Process Systems Div.; Schempf, H. [Carnegie Mellon Univ., Pittsburgh, PA (United States); Blair, L.M. [Human Machine Interfaces, Inc., Knoxville, TN (United States)

    1997-02-01

    This report describes human factors issues involved in the design of RoboCon, a multi-purpose control center for use in US Department of Energy remote handling applications. RoboCon is intended to be a flexible, modular control center capable of supporting a wide variety of robotic devices.

  3. RoboCon: A general purpose telerobotic control center

    International Nuclear Information System (INIS)

    Draper, J.V.; Noakes, M.W.; Blair, L.M.

    1997-01-01

    This report describes human factors issues involved in the design of RoboCon, a multi-purpose control center for use in US Department of Energy remote handling applications. RoboCon is intended to be a flexible, modular control center capable of supporting a wide variety of robotic devices

  4. Present Circumstances and its Effect of Participation in NHK Robocon/RoboCup Competition for Engineering Education in College of Technology

    Science.gov (United States)

    Sugiura, Touko; Ito, Kazuaki; Watanabe, Masato

    The engineering education through making robots which needs various techniques such as construction of mechanism and electric circuit design are very useful for training of the students' creativity and developing the students' personality. Toyota National College of Technology has participate in NHK Robocon competition for sixteen years and Robocup competition for four years as a part of engineering education getting spectacular results in those competitions. This paper discusses the present circumstances and its effect of participation in Robocon/RoboCup competition for the engineering education, based on the students' questionnaire survey. It is described to participate in NHK Robocon competition is very important for enhancing the students' knowledge and experience. Furthermore, the participation in Robocup competition brings better results for student' personality development as compared with participation in only Robocon competition.

  5. Robotic and user interface solutions for hazardous and remote applications

    International Nuclear Information System (INIS)

    Schempf, H.

    1997-01-01

    Carnegie Mellon University (CMU) is developing novel robotic and user interface systems to assist in the cleanup activities undertaken by the U.S. Department of Energy (DOE). Under DOE's EM-50 funding and administered by the Federal Energy Technology Center (FETC), CMU has developed a novel asbestos pipe-insulation abatement robot system, called BOA, and a novel generic user interface control and training console, dubbed RoboCon. The use of BOA will allow the speedier abatement of the vast DOE piping networks clad with hazardous and contaminated asbestos insulation by which overall job costs can be reduced by as much as 50%. RoboCon will allow the DOE to evaluate different remote and robotic system technologies from the overall man-machine performance standpoint, as well as provide a standardized training platform for training site operators in the operation of remote and robotic equipment

  6. IDC Robocon: A Transnational Teaming Competition for Project-Based Design Education in Undergraduate Robotics

    OpenAIRE

    Ning Tan; Rajesh Elara Mohan; Shaohui Foong; Masaki Yamakita; Masami Iwase; Shoshiro Hatakeyama; Norihiro Kamamichi; Libo Song; You Wang; Qiuguo Zhu

    2016-01-01

    This paper presents a robot design competition called ‘IDC Robocon’ as an effective tool for engineering education. The International Design Contest (IDC) Robocon competition has several benefits in creating a meaningful design experience for undergraduate engineering students and includes an international flavour as participants of the competition hail from all around the world. The problem posed to the contestants is to design, build and test mobile robots that are capable of accomplishing ...

  7. Electric potential differences across auroral generator interfaces

    Directory of Open Access Journals (Sweden)

    J. De Keyser

    2013-02-01

    Full Text Available Strong localized high-altitude auroral electric fields, such as those observed by Cluster, are often associated with magnetospheric interfaces. The type of high-altitude electric field profile (monopolar, bipolar, or more complicated depends on the properties of the plasmas on either side of the interface, as well as on the total electric potential difference across the structure. The present paper explores the role of this cross-field electric potential difference in the situation where the interface is a tangential discontinuity. A self-consistent Vlasov description is used to determine the equilibrium configuration for different values of the transverse potential difference. A major observation is that there exist limits to the potential difference, beyond which no equilibrium configuration of the interface can be sustained. It is further demonstrated how the plasma densities and temperatures affect the type of electric field profile in the transition, with monopolar electric fields appearing primarily when the temperature contrast is large. These findings strongly support the observed association of monopolar fields with the plasma sheet boundary. The role of shear flow tangent to the interface is also examined.

  8. Electricity in foams: from one soapy interface to the macroscopic material

    Science.gov (United States)

    Biance, Anne-Laure

    2017-11-01

    Liquid foams (a dispersion of gas bubbles in a soapy solution) destabilize with time due to coarsening, coalescence and gravity driven drainage. We propose here to inhibit (or trigger) the foam destabilization by applying an electric field to the material. This effect is investigated at the different scales of the system: one soapy interface, one liquid film, the macroscopic foam. The generation of an electroosmotic flow near a soapy liquid/gas interface raises many issues. How does the flow affect surfactant repartition? Is there a Marangoni stress at the interface? At the scale of one soap film, how the electric field affects the film stability and deformation? In a macroscopic foam, one can wonder whether the electric field can indeed reverse gravity driven drainage and increase foam lifetime? These different issues are considered by developing new experimental techniques allowing us to probe surfactant repartition at liquid interfaces, soap film thicknesses and liquid foam properties when an electric field is applied. The results will be presented together with a comprehensive picture of the mechanisms arising at each scale of the material, to conclude with the potential use of electricity in liquid foams to control destabilization. Collaborators: Baptiste Blanc, Oriane Bonhomme, Laurent Joly, Christophe Ybert.

  9. Electrical doping: the impact on interfaces of π-conjugated molecular films

    International Nuclear Information System (INIS)

    Gao Weiying; Kahn, Antoine

    2003-01-01

    Organic-metal and organic-organic interfaces play crucial roles in charge injection in, and transport through, organic thin film devices. Their electronic structure, chemical properties and electrical behaviour must be fully characterized and understood if engineering and control of organic devices are to reach the levels attained for inorganic semiconductor devices. Recent fundamental, as well as device, work has demonstrated that electrical doping provides a very interesting way to improve carrier injection into molecular films and, eventually, control molecular level alignment at their interfaces. This brief review emphasizes the current understanding of the effects of doping on organic interfaces

  10. Battery electric vehicles - implications for the driver interface.

    Science.gov (United States)

    Neumann, Isabel; Krems, Josef F

    2016-03-01

    The current study examines the human-machine interface of a battery electric vehicle (BEV) from a user-perspective, focussing on the evaluation of BEV-specific displays, the relevance of provided information and challenges for drivers due to the concept of electricity in a road vehicle. A sample of 40 users drove a BEV for 6 months. Data were gathered at three points of data collection. Participants perceived the BEV-specific displays as only moderately reliable and helpful for estimating the displayed parameters. This was even less the case after driving the BEV for 3 months. A taxonomy of user requirements was compiled revealing the need for improved and additional information, especially regarding energy consumption and efficiency. Drivers had difficulty understanding electrical units and the energy consumption of the BEV. On the background of general principles for display design, results provide implications how to display relevant information and how to facilitate drivers' understanding of energy consumption in BEVs. Practitioner Summary: Battery electric vehicle (BEV) displays need to incorporate new information. A taxonomy of user requirements was compiled revealing the need for improved and additional information in the BEV interface. Furthermore, drivers had trouble understanding electrical units and energy consumption; therefore, appropriate assistance is required. Design principles which are specifically important in the BEV context are discussed.

  11. Transmission of electric dipole radiation through an interface

    Energy Technology Data Exchange (ETDEWEB)

    Arnoldus, Henk F., E-mail: hfa1@msstate.edu [Department of Physics and Astronomy, Mississippi State University, P.O. Drawer 5167, Mississippi State, MS 39762-5167 (United States); Berg, Matthew J., E-mail: matt.berg@msstate.edu [Department of Physics and Astronomy, Mississippi State University, P.O. Drawer 5167, Mississippi State, MS 39762-5167 (United States); Li, Xin, E-mail: Xin.Li@millersville.edu [Department of Physics, P.O. Box 1002, Millersville University, Millersville, PA 17551 (United States)

    2014-02-07

    We consider the transmission of electric dipole radiation through an interface between two dielectrics, for the case of a vertical dipole. Energy flows along the field lines of the Poynting vector, and in the optical near field these field lines are curves (as opposed to optical rays). When the radiation passes through the interface into a thicker medium, the field lines bend to the normal (as rays do), but the transmission angle is not related to the angle of incidence. The redirection of the radiation at the interface is determined by the angle dependence of the transmission coefficient. This near-field redistribution is responsible for the far-field angular power pattern. When the transmission medium is thinner than the embedding medium of the dipole, some energy flows back and forth through the interface in an oscillating fashion. In each area where field lines dip below the interface, an optical vortex appears just above the interface. The centers of these vortices are concentric singular circles around the dipole axis.

  12. High-speed Integrated Circuits for electrical/Optical Interfaces

    DEFF Research Database (Denmark)

    Jespersen, Christoffer Felix

    2008-01-01

    This thesis is a continuation of the effort to increase the bandwidth of communicationnetworks. The thesis presents the results of the design of several high-speed electrical ircuits for an electrical/optical interface. These circuits have been a contribution to the ESTA project in collaboration...... circuits at the receiver interface, though VCOs are also found in the transmitter where a multitude of independent sources have to be mutually synchronized before multiplexing. The circuits are based on an InP DHBT process (VIP-2) supplied by Vitesse and made publicly available as MPW. The VIP-2 process...... represents the avant-garde of InP technology, with ft and fmax well above 300 GHz. Principles of high speed design are presented and described as a useful background before proceeding to circuits. A static divider is used as an example to illustrate many of the design principles. Theory and fundamentals...

  13. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  14. High-performance, polymer-based direct cellular interfaces for electrical stimulation and recording

    Science.gov (United States)

    Kim, Seong-Min; Kim, Nara; Kim, Youngseok; Baik, Min-Seo; Yoo, Minsu; Kim, Dongyoon; Lee, Won-June; Kang, Dong-Hee; Kim, Sohee; Lee, Kwanghee; Yoon, Myung-Han

    2018-04-01

    Due to the trade-off between their electrical/electrochemical performance and underwater stability, realizing polymer-based, high-performance direct cellular interfaces for electrical stimulation and recording has been very challenging. Herein, we developed transparent and conductive direct cellular interfaces based on a water-stable, high-performance poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) film via solvent-assisted crystallization. The crystallized PEDOT:PSS on a polyethylene terephthalate (PET) substrate exhibited excellent electrical/electrochemical/optical characteristics, long-term underwater stability without film dissolution/delamination, and good viability for primarily cultured cardiomyocytes and neurons over several weeks. Furthermore, the highly crystallized, nanofibrillar PEDOT:PSS networks enabled dramatically enlarged surface areas and electrochemical activities, which were successfully employed to modulate cardiomyocyte beating via direct electrical stimulation. Finally, the high-performance PEDOT:PSS layer was seamlessly incorporated into transparent microelectrode arrays for efficient, real-time recording of cardiomyocyte action potentials with a high signal fidelity. All these results demonstrate the strong potential of crystallized PEDOT:PSS as a crucial component for a variety of versatile bioelectronic interfaces.

  15. Metal-dielectric interfaces in gigascale electronics thermal and electrical stability

    CERN Document Server

    He, Ming

    2012-01-01

    Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric i...

  16. Investigation of surface charge density on solid–liquid interfaces by modulating the electrical double layer

    International Nuclear Information System (INIS)

    Moon, Jong Kyun; Song, Myung Won; Pak, Hyuk Kyu

    2015-01-01

    A solid surface in contact with water or aqueous solution usually carries specific electric charges. These surface charges attract counter ions from the liquid side. Since the geometry of opposite charge distribution parallel to the solid–liquid interface is similar to that of a capacitor, it is called an electrical double layer capacitor (EDLC). Therefore, there is an electrical potential difference across an EDLC in equilibrium. When a liquid bridge is formed between two conducting plates, the system behaves as two serially connected EDLCs. In this work, we propose a new method for investigating the surface charge density on solid–liquid interfaces. By mechanically modulating the electrical double layers and simultaneously applying a dc bias voltage across the plates, an ac electric current can be generated. By measuring the voltage drop across a load resistor as a function of bias voltage, we can study the surface charge density on solid–liquid interfaces. Our experimental results agree very well with the simple equivalent electrical circuit model proposed here. Furthermore, using this method, one can determine the polarity of the adsorbed state on the solid surface depending on the material used. We expect this method to aid in the study of electrical phenomena on solid–liquid interfaces. (paper)

  17. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

    Science.gov (United States)

    Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

    2018-05-01

    In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

  18. Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces.

    Science.gov (United States)

    Taniyama, Tomoyasu

    2015-12-23

    By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

  19. Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

    International Nuclear Information System (INIS)

    Taniyama, Tomoyasu

    2015-01-01

    By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications. (topical review)

  20. Efficacy of brain-computer interface-driven neuromuscular electrical stimulation for chronic paresis after stroke.

    Science.gov (United States)

    Mukaino, Masahiko; Ono, Takashi; Shindo, Keiichiro; Fujiwara, Toshiyuki; Ota, Tetsuo; Kimura, Akio; Liu, Meigen; Ushiba, Junichi

    2014-04-01

    Brain computer interface technology is of great interest to researchers as a potential therapeutic measure for people with severe neurological disorders. The aim of this study was to examine the efficacy of brain computer interface, by comparing conventional neuromuscular electrical stimulation and brain computer interface-driven neuromuscular electrical stimulation, using an A-B-A-B withdrawal single-subject design. A 38-year-old male with severe hemiplegia due to a putaminal haemorrhage participated in this study. The design involved 2 epochs. In epoch A, the patient attempted to open his fingers during the application of neuromuscular electrical stimulation, irrespective of his actual brain activity. In epoch B, neuromuscular electrical stimulation was applied only when a significant motor-related cortical potential was observed in the electroencephalogram. The subject initially showed diffuse functional magnetic resonance imaging activation and small electro-encephalogram responses while attempting finger movement. Epoch A was associated with few neurological or clinical signs of improvement. Epoch B, with a brain computer interface, was associated with marked lateralization of electroencephalogram (EEG) and blood oxygenation level dependent responses. Voluntary electromyogram (EMG) activity, with significant EEG-EMG coherence, was also prompted. Clinical improvement in upper-extremity function and muscle tone was observed. These results indicate that self-directed training with a brain computer interface may induce activity- dependent cortical plasticity and promote functional recovery. This preliminary clinical investigation encourages further research using a controlled design.

  1. In situ study of electric field controlled ion transport in the Fe/BaTiO3 interface

    Science.gov (United States)

    Merkel, D. G.; Bessas, D.; Bazsó, G.; Jafari, A.; Rüffer, R.; Chumakov, A. I.; Khanh, N. Q.; Sajti, Sz; Celse, J.-P.; Nagy, D. L.

    2018-01-01

    Electric field controlled ion transport and interface formation of iron thin films on a BaTiO3 substrate have been investigated by in situ nuclear resonance scattering and x-ray reflectometry techniques. At early stage of deposition, an iron-II oxide interface layer was observed. The hyperfine parameters of the interface layer were found insensitive to the evaporated layer thickness. When an electric field was applied during growth, a 10 Å increase of the nonmagnetic/magnetic thickness threshold and an extended magnetic transition region was measured compared to the case where no field was applied. The interface layer was found stable under this threshold when further evaporation occurred, contrary to the magnetic layer where the magnitude and orientation of the hyperfine magnetic field vary continuously. The obtained results of the growth mechanism and of the electric field effect of the Fe/BTO system will allow the design of novel applications by creating custom oxide/metallic nanopatterns using laterally inhomogeneous electric fields during sample preparation.

  2. Effects of interface electric field on the magnetoresistance in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

    2014-04-28

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  3. In situ study of electric field controlled ion transport in the Fe/BaTiO3 interface

    DEFF Research Database (Denmark)

    Merkel, D. G.; Bessas, D.; Bazso, G.

    2018-01-01

    Electric field controlled ion transport and interface formation of iron thin films on a BaTiO3 substrate have been investigated by in situ nuclear resonance scattering and x-ray reflectometry techniques. At early stage of deposition, an iron-II oxide interface layer was observed. The hyperfine...... parameters of the interface layer were found insensitive to the evaporated layer thickness. When an electric field was applied during growth, a 10 angstrom increase of the nonmagnetic/magnetic thickness threshold and an extended magnetic transition region was measured compared to the case where no field...... was applied. The interface layer was found stable under this threshold when further evaporation occurred, contrary to the magnetic layer where the magnitude and orientation of the hyperfine magnetic field vary continuously. The obtained results of the growth mechanism and of the electric field effect...

  4. Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy

    Science.gov (United States)

    Zhang, J. Y.; Xie, Y. P.; Guo, H. B.; Chen, Y. G.

    2018-05-01

    Aluminum nitride (AlN) has a polar crystal structure that is susceptible to electric dipolar interactions. The inversion domains in AlN, similar to those in GaN and other wurtzite-structure materials, decrease the energy associated with the electric dipolar interactions at the expense of inversion-domain boundaries, whose interface energy has not been quantified. We study the atomic structures of six different inversion-domain boundaries in AlN, and compare their interface energies from density functional theory calculations. The low-energy interfaces have atomic structures with similar bonding geometry as those in the bulk phase, while the high-energy interfaces contain N-N wrong bonds. We calculate the formation energy of an inversion domain using the interface energy and dipoles' electric-field energy, and find that the distribution of the inversion domains is an important parameter for the microstructures of AlN films. Using this thermodynamic model, it is possible to control the polarity and microstructure of AlN films by tuning the distribution of an inversion-domain nucleus and by selecting the low-energy synthesis methods.

  5. Theory of the formation of the electric double layer at the ion exchange membrane-solution interface.

    Science.gov (United States)

    Moya, A A

    2015-02-21

    This work aims to extend the study of the formation of the electric double layer at the interface defined by a solution and an ion-exchange membrane on the basis of the Nernst-Planck and Poisson equations, including different values of the counter-ion diffusion coefficient and the dielectric constant in the solution and membrane phases. The network simulation method is used to obtain the time evolution of the electric potential, the displacement electric vector, the electric charge density and the ionic concentrations at the interface between a binary electrolyte solution and a cation-exchange membrane with total co-ion exclusion. The numerical results for the temporal evolution of the interfacial electric potential and the surface electric charge are compared with analytical solutions derived in the limit of the shortest times by considering the Poisson equation for a simple cationic diffusion process. The steady-state results are justified from the Gouy-Chapman theory for the diffuse double layer in the limits of similar and high bathing ionic concentrations with respect to the fixed-charge concentration inside the membrane. Interesting new physical insights arise from the interpretation of the process of the formation of the electric double layer at the ion exchange membrane-solution interface on the basis of a membrane model with total co-ion exclusion.

  6. Ultrasound guided electrical impedance tomography for 2D free-interface reconstruction

    Science.gov (United States)

    Liang, Guanghui; Ren, Shangjie; Dong, Feng

    2017-07-01

    The free-interface detection problem is normally seen in industrial or biological processes. Electrical impedance tomography (EIT) is a non-invasive technique with advantages of high-speed and low cost, and is a promising solution for free-interface detection problems. However, due to the ill-posed and nonlinear characteristics, the spatial resolution of EIT is low. To deal with the issue, an ultrasound guided EIT is proposed to directly reconstruct the geometric configuration of the target free-interface. In the method, the position of the central point of the target interface is measured by a pair of ultrasound transducers mounted at the opposite side of the objective domain, and then the position measurement is used as the prior information for guiding the EIT-based free-interface reconstruction. During the process, a constrained least squares framework is used to fuse the information from different measurement modalities, and the Lagrange multiplier-based Levenberg-Marquardt method is adopted to provide the iterative solution of the constraint optimization problem. The numerical results show that the proposed ultrasound guided EIT method for the free-interface reconstruction is more accurate than the single modality method, especially when the number of valid electrodes is limited.

  7. Ultrasound guided electrical impedance tomography for 2D free-interface reconstruction

    International Nuclear Information System (INIS)

    Liang, Guanghui; Ren, Shangjie; Dong, Feng

    2017-01-01

    The free-interface detection problem is normally seen in industrial or biological processes. Electrical impedance tomography (EIT) is a non-invasive technique with advantages of high-speed and low cost, and is a promising solution for free-interface detection problems. However, due to the ill-posed and nonlinear characteristics, the spatial resolution of EIT is low. To deal with the issue, an ultrasound guided EIT is proposed to directly reconstruct the geometric configuration of the target free-interface. In the method, the position of the central point of the target interface is measured by a pair of ultrasound transducers mounted at the opposite side of the objective domain, and then the position measurement is used as the prior information for guiding the EIT-based free-interface reconstruction. During the process, a constrained least squares framework is used to fuse the information from different measurement modalities, and the Lagrange multiplier-based Levenberg–Marquardt method is adopted to provide the iterative solution of the constraint optimization problem. The numerical results show that the proposed ultrasound guided EIT method for the free-interface reconstruction is more accurate than the single modality method, especially when the number of valid electrodes is limited. (paper)

  8. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  9. Generation of Electricity at Graphene Interface Governed by Underlying Surface Dipole Induced Ion Adsorption

    Science.gov (United States)

    Yang, Shanshan; Su, Yudan; Wu, Qiong; Zhang, Yuanbo; Tian, Chuanshan

    Aqueous droplet moving along graphene surface can produce electricity This interesting phenomenon provided environment-friendly means to harvest energy from graphene interface in contact with sea wave or rain droplets. However, microscopically, the nature of charge adsorption at the graphene interface is still unclear. Here, utilizing sum-frequency spectroscopy in combined with measurement of electrical power generation, the origin of charge adsorption on graphene was investigated. It was found that the direct ion-graphene interaction is negligibly small, contrary to the early speculation, but the ordered surface dipole from the supporting substrate, such as PET, is responsible for ion adsorption at the interface. Graphene serves as a conductive layer with mild screening of Coulomb interaction when aqueous droplet slips over the surface. These results pave the way for optimization of energy harvesting efficiency of graphene-based device.

  10. A bidirectional soft switched ultracapacitor interface circuit for hybrid electric vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Farzanehfard, Hosein; Beyragh, Dawood Shekari; Adib, Ehsan [Electrical and Computer Engineering Department, Isfahan University of Technology, Isfahan 84156 (Iran)

    2008-12-15

    Ultracapacitors are used as auxiliary elements beside batteries to increase peak power capability and battery life in hybrid electric vehicles. In such a configuration, a bidirectional high efficiency converter is required as an interface between ultracapacitors and batteries. Since the voltage level of ultracapacitors and batteries are different, the interface must be able to increase or decrease the voltage level in each power flow direction while limiting the current. This paper presents a zero voltage transition (ZVT) buck-and-boost converter for ultracapacitors interface. All the switches in the proposed converter are soft switched to reduce switching losses and increase efficiency. The converter operational modes are analyzed and its performance is discussed. Finally, the experimental results from a 150 W laboratory prototype are presented which justify the theoretical analysis. (author)

  11. Equilibrium and surface stability of liquid dielectric interface in electrical and gravitational fields

    Energy Technology Data Exchange (ETDEWEB)

    Ievlev, I I; Isers, A B

    1976-01-01

    An examination is made of the problem of locating the stable equilibrium surface shape of the interface between two liquid, uniform, isotropic, ideal dielectrics subject to the force of gravity, surface tension, and electrical forces. The conditions for the equilibrium and surface stability of the interface were obtained from the minimum free energy principle. These conditions are used for solving problems on locating the stable equilibrium interface boundary between two dielectrics positioned between infinite charged vertical plates, between infinite vertical coaxial cylinders, between infinite grounded plates and two horizontal charged thin cylinders placed between them. 8 references, 4 figures.

  12. Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

    Science.gov (United States)

    Luo, Xiangcheng

    Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic

  13. Renewable Electric Plant Information System user interface manual: Paradox 7 Runtime for Windows

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-11-01

    The Renewable Electric Plant Information System (REPiS) is a comprehensive database with detailed information on grid-connected renewable electric plants in the US. The current version, REPiS3 beta, was developed in Paradox for Windows. The user interface (UI) was developed to facilitate easy access to information in the database, without the need to have, or know how to use, Paradox for Windows. The UI is designed to provide quick responses to commonly requested sorts of the database. A quick perusal of this manual will familiarize one with the functions of the UI and will make use of the system easier. There are six parts to this manual: (1) Quick Start: Instructions for Users Familiar with Database Applications; (2) Getting Started: The Installation Process; (3) Choosing the Appropriate Report; (4) Using the User Interface; (5) Troubleshooting; (6) Appendices A and B.

  14. Participation in the ABWR Man-Machine interface design. Applicability to the Spanish Electrical Sector

    International Nuclear Information System (INIS)

    Rodriguez, C.; Manrique Martin, A.; Nunez, J.

    1997-01-01

    Project coordinated by DTN within the advanced reactor programme. Participation in the design activities for the Advanced Boiling Water Reactor (ABWR) man-machine interface was divided into two phases: Phase I: Preparation of drawings for designing, developing and assessing the advanced control room Phase II: Application of these drawings in design activities Participation in this programme has led to the following possible future applications to the electrical sector: 1. Design and implementation of man-machine interfaces 2. Human factor criteria 3. Assessment of man-machine interfaces 4. Functional specification, computerised operating procedures 5. Computerised alarm prototypes. (Author)

  15. Electroluminescence and electrical degradation of insulating polymers at electrode interfaces under divergent fields

    Science.gov (United States)

    Zhang, Shuai; Li, Qi; Hu, Jun; Zhang, Bo; He, Jinliang

    2018-04-01

    Electrical degradation of insulating polymers at electrode interfaces is an essential factor in determining long-term reliability. A critical challenge is that the exact mechanism of degradation is not fully understood, either experimentally or theoretically, due to the inherent complex processes. Consequently, in this study, we investigate electroluminescence (EL) at the interface of an electrode and insulator, and determine the relationship between EL and electrical degradation. Using a tip-plate electrode structure, the unique features of EL under a highly divergent field are investigated. The voltage type (alternating or direct current), the polymer matrix, and the time of pressing are also investigated separately. A study of EL from insulators under a divergent field is provided, and the relationship between EL spectra and degradation is discussed. It is shown that EL spectra under a divergent field have unique characteristics compared with EL spectra from polymer films under a uniform field and the most obvious one is the UV emission. The results obtained in the current investigation bring us a step closer to understanding the process of electrical degradation and provide a potential way to diagnose insulator defects.

  16. Estudio de la seguridad ofrecida por las interfaces del comercio electrónico ecuatoriano

    OpenAIRE

    Washco Castro, Sandra Catalina

    2007-01-01

    Fudamentada en la importancia del comercio electrónico en las actividades de la sociedad actaul, esta tesis se centra en el estudio de la seguridad ofrecida por las interfaces web de comercio electrónico ecuatorianas. Debido a la evolución que ha tenido el concepto de comercio electronico en lso ultimos años,este trabajo inicia proponiendo una nueva clasificación para los sitios de comercio electrónico de acuerdo a ciertos criterios de seguridad... Magíster en Telemática Cuenca

  17. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  18. Archaeologies of touch interfacing with haptics from electricity to computing

    CERN Document Server

    Parisi, David

    2018-01-01

    David Parisi offers the first full history of new computing technologies known as haptic interfaces--which use electricity, vibration, and force feedback to stimulate the sense of touch--showing how the efforts of scientists and engineers over the past 300 years have gradually remade and redefined our sense of touch. Archaeologies of Touch offers a timely and provocative engagement with the long history of touch technology that helps us confront and question the power relations underpinning the project of giving touch its own set of technical media.

  19. Neuromechanism study of insect-machine interface: flight control by neural electrical stimulation.

    Directory of Open Access Journals (Sweden)

    Huixia Zhao

    Full Text Available The insect-machine interface (IMI is a novel approach developed for man-made air vehicles, which directly controls insect flight by either neuromuscular or neural stimulation. In our previous study of IMI, we induced flight initiation and cessation reproducibly in restrained honeybees (Apis mellifera L. via electrical stimulation of the bilateral optic lobes. To explore the neuromechanism underlying IMI, we applied electrical stimulation to seven subregions of the honeybee brain with the aid of a new method for localizing brain regions. Results showed that the success rate for initiating honeybee flight decreased in the order: α-lobe (or β-lobe, ellipsoid body, lobula, medulla and antennal lobe. Based on a comparison with other neurobiological studies in honeybees, we propose that there is a cluster of descending neurons in the honeybee brain that transmits neural excitation from stimulated brain areas to the thoracic ganglia, leading to flight behavior. This neural circuit may involve the higher-order integration center, the primary visual processing center and the suboesophageal ganglion, which is also associated with a possible learning and memory pathway. By pharmacologically manipulating the electrically stimulated honeybee brain, we have shown that octopamine, rather than dopamine, serotonin and acetylcholine, plays a part in the circuit underlying electrically elicited honeybee flight. Our study presents a new brain stimulation protocol for the honeybee-machine interface and has solved one of the questions with regard to understanding which functional divisions of the insect brain participate in flight control. It will support further studies to uncover the involved neurons inside specific brain areas and to test the hypothesized involvement of a visual learning and memory pathway in IMI flight control.

  20. Neuromechanism study of insect-machine interface: flight control by neural electrical stimulation.

    Science.gov (United States)

    Zhao, Huixia; Zheng, Nenggan; Ribi, Willi A; Zheng, Huoqing; Xue, Lei; Gong, Fan; Zheng, Xiaoxiang; Hu, Fuliang

    2014-01-01

    The insect-machine interface (IMI) is a novel approach developed for man-made air vehicles, which directly controls insect flight by either neuromuscular or neural stimulation. In our previous study of IMI, we induced flight initiation and cessation reproducibly in restrained honeybees (Apis mellifera L.) via electrical stimulation of the bilateral optic lobes. To explore the neuromechanism underlying IMI, we applied electrical stimulation to seven subregions of the honeybee brain with the aid of a new method for localizing brain regions. Results showed that the success rate for initiating honeybee flight decreased in the order: α-lobe (or β-lobe), ellipsoid body, lobula, medulla and antennal lobe. Based on a comparison with other neurobiological studies in honeybees, we propose that there is a cluster of descending neurons in the honeybee brain that transmits neural excitation from stimulated brain areas to the thoracic ganglia, leading to flight behavior. This neural circuit may involve the higher-order integration center, the primary visual processing center and the suboesophageal ganglion, which is also associated with a possible learning and memory pathway. By pharmacologically manipulating the electrically stimulated honeybee brain, we have shown that octopamine, rather than dopamine, serotonin and acetylcholine, plays a part in the circuit underlying electrically elicited honeybee flight. Our study presents a new brain stimulation protocol for the honeybee-machine interface and has solved one of the questions with regard to understanding which functional divisions of the insect brain participate in flight control. It will support further studies to uncover the involved neurons inside specific brain areas and to test the hypothesized involvement of a visual learning and memory pathway in IMI flight control.

  1. Neuromechanism Study of Insect–Machine Interface: Flight Control by Neural Electrical Stimulation

    Science.gov (United States)

    Zhao, Huixia; Zheng, Nenggan; Ribi, Willi A.; Zheng, Huoqing; Xue, Lei; Gong, Fan; Zheng, Xiaoxiang; Hu, Fuliang

    2014-01-01

    The insect–machine interface (IMI) is a novel approach developed for man-made air vehicles, which directly controls insect flight by either neuromuscular or neural stimulation. In our previous study of IMI, we induced flight initiation and cessation reproducibly in restrained honeybees (Apis mellifera L.) via electrical stimulation of the bilateral optic lobes. To explore the neuromechanism underlying IMI, we applied electrical stimulation to seven subregions of the honeybee brain with the aid of a new method for localizing brain regions. Results showed that the success rate for initiating honeybee flight decreased in the order: α-lobe (or β-lobe), ellipsoid body, lobula, medulla and antennal lobe. Based on a comparison with other neurobiological studies in honeybees, we propose that there is a cluster of descending neurons in the honeybee brain that transmits neural excitation from stimulated brain areas to the thoracic ganglia, leading to flight behavior. This neural circuit may involve the higher-order integration center, the primary visual processing center and the suboesophageal ganglion, which is also associated with a possible learning and memory pathway. By pharmacologically manipulating the electrically stimulated honeybee brain, we have shown that octopamine, rather than dopamine, serotonin and acetylcholine, plays a part in the circuit underlying electrically elicited honeybee flight. Our study presents a new brain stimulation protocol for the honeybee–machine interface and has solved one of the questions with regard to understanding which functional divisions of the insect brain participate in flight control. It will support further studies to uncover the involved neurons inside specific brain areas and to test the hypothesized involvement of a visual learning and memory pathway in IMI flight control. PMID:25409523

  2. Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, Dai; Sumiyoshi, Ryota; Chen, Xiangyu; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp

    2014-03-03

    By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the effect of the use of bathocuproine (BCP) interface layer. The EFISHG measurements of indium–zinc–oxide (IZO)/C{sub 60}/Al diodes showed that the BCP layer inserted between C{sub 60} and Al formed an electrostatic field |E{sub i}| = 2.5 × 10{sup 4} V/cm in the C{sub 60} layer, pointing in a direction from the Al to the IZO. Accordingly, in the IZO/pentacene/C{sub 60}/BCP/Al organic solar cells (OSCs), holes (electrons) move to the IZO (Al) electrode, enhancing the short-circuit current. The EFISHG measurement is capable of directly probing internal fields in the layers used for OSCs, and is helpful for studying the contribution of the interface layer in OSCs. - Highlights: • Internal field in organic solar cells (OSCs) were directly probed. • Interface layer formed internal electric field, enhancing the OSC performance. • Maxwell–Wagner effect accounts for the internal electric field formation.

  3. External electric field effects on Schottky barrier at Gd3N@C80/Au interface

    Science.gov (United States)

    Onishi, Koichi; Nakashima, Fumihiro; Jin, Ge; Eto, Daichi; Hattori, Hayami; Miyoshi, Noriko; Kirimoto, Kenta; Sun, Yong

    2017-08-01

    The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3] 9 +-[N3 -+("separators="|C80 ) 6 -] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface.

  4. Upper limb functional electrical stimulation devices and their man-machine interfaces.

    Science.gov (United States)

    Venugopalan, L; Taylor, P N; Cobb, J E; Swain, I D

    2015-01-01

    Functional Electrical Stimulation (FES) is a technique that uses electricity to activate the nerves of a muscle that is paralysed due to hemiplegia, multiple sclerosis, Parkinson's disease or spinal cord injury (SCI). FES has been widely used to restore upper limb functions in people with hemiplegia and C5-C7 tetraplegia and has improved their ability to perform their activities of daily living (ADL). At the time of writing, a detailed literature review of the existing upper limb FES devices and their man-machine interfaces (MMI) showed that only the NESS H200 was commercially available. However, the rigid arm splint doesn't fit everyone and prevents the use of a tenodesis grip. Hence, a robust and versatile upper limb FES device that can be used by a wider group of people is required.

  5. Atomically-resolved mapping of polarization and electric fields across ferroelectric-oxide interfaces by Z-contrast imaging

    Science.gov (United States)

    Borisevich, Albina; Chang, Hye Jung; Kalinin, Sergei; Morozovska, Anna; Chu, Ying-Hao; Yu, Pu; Ramesh, Ramamoorthy; Pennycook, Stephen

    2011-03-01

    Polarization, electric field, charge and potential across ferroelectric-oxide interfaces are obtained from direct atomic position mapping by aberration corrected scanning transmission electron microscopy combined with Ginsburg-Landau-Devonshire theory. We compare two antiparallel polarization orientations, which allows separation of the polarization and intrinsic interface charge contributions. Using the Born effective charges, the complete interface electrostatics is obtained in real space, providing an alternative method to holography. The results provide new microscopic insight into the thermodynamics of polarization distribution at the atomic level. Research is sponsored by the of Materials Sciences and Engineering Division, U.S. DOE.

  6. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  7. Effect of heavy-metal insertions at Fe/MgO interfaces on electric-field-induced modification of magnetocrystalline anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, K.; Nomura, T. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Pradipto, A.-M. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Nawa, K.; Akiyama, T.; Ito, T. [Department of Physics Engineering, Mie University, Tsu, Mie 514-8507 (Japan)

    2017-05-01

    Magnetocrystalline anisotropy (MCA) at Fe/MgO interfaces with insertions of 3d (Co, Ni), 4d (Ru, Rh, Pd), and 5d (Os, Ir, Pt) elements in external electric fields was investigated from first-principles calculations. The MCA energy and the electric-field-induced MCA modification dramatically depend on the inserted elements. Large MCA modification may be achieved by heavy-metal insertions, in which the strength of spin-orbit coupling of inserted elements and the position of the Fermi level relative to d band level play key roles. - Highlights: • MCA at Fe/MgO interface dramatically depends on insertions of 3d, 4d, and 5d elements. • Large electric-field-induced MCA modification is achieved by heavy-metal insertions. • Position of Fermi level relative to d band level plays key role in determining MCA.

  8. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  9. Water liquid-vapor interface subjected to various electric fields: A molecular dynamics study

    Science.gov (United States)

    Nikzad, Mohammadreza; Azimian, Ahmad Reza; Rezaei, Majid; Nikzad, Safoora

    2017-11-01

    Investigation of the effects of E-fields on the liquid-vapor interface is essential for the study of floating water bridge and wetting phenomena. The present study employs the molecular dynamics method to investigate the effects of parallel and perpendicular E-fields on the water liquid-vapor interface. For this purpose, density distribution, number of hydrogen bonds, molecular orientation, and surface tension are examined to gain a better understanding of the interface structure. Results indicate enhancements in parallel E-field decrease the interface width and number of hydrogen bonds, while the opposite holds true in the case of perpendicular E-fields. Moreover, perpendicular fields disturb the water structure at the interface. Given that water molecules tend to be parallel to the interface plane, it is observed that perpendicular E-fields fail to realign water molecules in the field direction while the parallel ones easily do so. It is also shown that surface tension rises with increasing strength of parallel E-fields, while it reduces in the case of perpendicular E-fields. Enhancement of surface tension in the parallel field direction demonstrates how the floating water bridge forms between the beakers. Finally, it is found that application of external E-fields to the liquid-vapor interface does not lead to uniform changes in surface tension and that the liquid-vapor interfacial tension term in Young's equation should be calculated near the triple-line of the droplet. This is attributed to the multi-directional nature of the droplet surface, indicating that no constant value can be assigned to a droplet's surface tension in the presence of large electric fields.

  10. Interface superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gariglio, S., E-mail: stefano.gariglio@unige.ch [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland); Gabay, M. [Laboratoire de Physique des Solides, Bat 510, Université Paris-Sud 11, Centre d’Orsay, 91405 Orsay Cedex (France); Mannhart, J. [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Triscone, J.-M. [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland)

    2015-07-15

    Highlights: • We discuss interfacial superconductivity, a field boosted by the discovery of the superconducting interface between LaAlO. • This system allows the electric field control and the on/off switching of the superconducting state. • We compare superconductivity at the interface and in bulk doped SrTiO. • We discuss the role of the interfacially induced Rashba type spin–orbit. • We briefly discuss superconductivity in cuprates, in electrical double layer transistor field effect experiments. • Recent observations of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3} are presented. - Abstract: Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3}. We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO{sub 3} and the interface system and the possible role of the interfacially induced Rashba type spin–orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3}.

  11. Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

    DEFF Research Database (Denmark)

    Christensen, Dennis Valbjørn; Trier, Felix; von Soosten, Merlin

    2016-01-01

    Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing...

  12. Novel design of electrical sensing interface for prosthetic limbs using optical micro cavities

    Science.gov (United States)

    Ali, Amir R.; Kamel, Mohamed A.

    2018-04-01

    This paper uses optical whispering galley modes (WGM) cavities to construct a new electrical sensing interface between prosthetic limb and the brain. The sensing element will detect the action potential signal in the neural membrane and the prosthetic limb will be actuated accordingly. The element is a WGM dielectric polymeric cavity. WGM based optical cavities can achieve very high values of sensitivity and quality factor; thus, any minute perturbations in the morphology of the cavity can be captured and measured. The action potential signal will produce an applied external electric field on the dielectric cavity causing it to deform due to the electrostriction effect. The resulting deformation will cause WGM shifts in the transmission spectrum of the cavity. Thus, the action potential or the applied electric field can be measured using these shifts. In this paper the action potential signal will be simulated through the use of a function generator and two metal electrodes. The sensing element will be situated between these electrodes to detect the electrical signal passing through. The achieved sensitivity is 27.5 pm/V in measuring the simulated action potential signal; and 0.32 pm/V.m-1 in measuring the applied electric field due to the passage of the simulated signal.

  13. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  14. Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shengyi; Zhang, Xiulong; Lou, Zhidong; Hou, Yanbing [Beijing Jiaotong University, Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing (China)

    2008-03-15

    In this paper, electroluminescence from organic light-emitting diodes based on 2-(4'-biphenyl)-5-(4{sup ''}-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]{sub n}/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device. (orig.)

  15. Les mécanismes d'action des détergents et les doubles couche électriques aux interfaces Action Mechanisms of Detergents and Double Electric Layer At Interfaces

    Directory of Open Access Journals (Sweden)

    Briant J.

    2006-11-01

    Full Text Available Les doubles couches électriques aux interfaces jouent un rôle important dans l'action des additifs détergents ioniques, surtout dans la stabilisation des suspensions. Les phénomènes électrocinétiques aux interfaces : électroosmose, potentiel d'écoulement, électrophorèse, potentiel de sédimentation permettent de mettre en évidence la double couche électrique et d'en déterminer certaines caractéristiques signe de la charge de la couche mobile, potentiel électrocinétique, etc. Les relations entre la stabilité des suspensions et l'interaction des doubles couches électriques ont fait l'objet d'études approfondies de Deriaguin, Verwey et Overbeek. Ces auteurs ont analysé le mécanisme d'action des doubles couches électriques et la façon dont elles pouvaient créer des forces de répulsion capables de surmonter les forces d'attraction de Van der Waals entre particules. Leur analyse permet d'expliquer les observations faites sur les effets de la charge des particules, la nature des ions fixés, la concentration de la phase dispersante en produits actifs. Le mécanisme d'action des doubles couches électriques permet peut-être d'appréhender mieux le mécanisme d'action des additifs non ioniques. Double electric loyers at interfaces play an important part in the action of ionic detergent additives, especially in the stability of suspensions. Electrokinetic phenomena at interfaces (electroosmosis,flow potential, electrophoresis, sedimentation potential can be used to reveal the double electric layer and to determine various properties such as the sign of the charge of the mobile loyer, the electrokinetic potential, etc. The relations between the stabillity of suspensions and the interaction of double electric loyers have been the subject of in-depth research by Deriaguin, Verwey and Overbeek. The authors have analyzed the action mechanism of double electric loyers and the way they can create repulsion forces capable of overcoming

  16. Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

    Science.gov (United States)

    Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

    2017-10-01

    The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

  17. Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

    Energy Technology Data Exchange (ETDEWEB)

    Cousineau, Justine E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chieduko, Victor [UQM Technologies, Inc.; Lall, Rajiv [UQM Technologies, Inc.; Gilbert, Alan [UQM Technologies, Inc.

    2018-05-08

    Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. The results were compared to currently available models for contact resistance, and one model was adapted for prediction of TCR in future motor designs.

  18. Influence of Pentacene Interface Layer in ITO/α-NPD/Alq3/Al Organic Light Emitting Diodes by Time-Resolved Electric-Field-Induced Optical Second-Harmonic Generation Measurement.

    Science.gov (United States)

    Oda, Yoshiaki; Sadakata, Atsuo; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-04-01

    By using I-V, EL-V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and a-NPD layers in ITO/α-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I-V and EL-V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the a-NPD and Alq3 layers, which resulted in the relaxation of electric field of a-NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I-V and EL-V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.

  19. Surfaces and interfaces of electronic materials

    CERN Document Server

    Brillson, Leonard J

    2012-01-01

    An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural propertie

  20. Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation

    Science.gov (United States)

    Xing, Songling; Lin, Luchan; Zou, Guisheng; Liu, Lei; Peng, Peng; Wu, Aiping; Duley, Walter W.; Zhou, Y. Norman

    2017-10-01

    In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO2) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO2-x layer is formed between the Pt electrode and the TiO2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm-2, the Pt/TiO2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

  1. Report on the results of the FY1999 standardization for new standard interface protocol for electrical measuring use; 1999 nendo shinki sangyo ikusei sokkogata kokusai hyojun kaihatsu jigyo seika hokokusho. Denki keisokukiyo shinhyojun interface purotokoru no hyojunka

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The purpose of this project is to create a new protocol for electric measuring instruments that use a built-in the Universal Serial Bus (USB) interface which is no incorporated in PCs. This new interface will replace the existing GPIB interface (IEEE-488), which is currently used in electric measuring instruments as standard interface. Our goal is to create a protocol that will provide the same data rate as GPIB and better connectivity. To evaluate our new protocol, we create virtual instruments using evaluation boards for USB chips, as well as software, and performed transfer tests to isolate and solve problems found in the tests. We will make the protocol and the software available for general use, and register the protocol as a standard to the USB Developer's Forum, a body that manages USB standards, to make it as a de facto standard. Ultimately we are aiming at making it an international standard. (NEDO)

  2. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    International Nuclear Information System (INIS)

    Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

  3. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    Science.gov (United States)

    Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

  4. Dynamic impedance model of the skin-electrode interface for transcutaneous electrical stimulation.

    Directory of Open Access Journals (Sweden)

    José Luis Vargas Luna

    Full Text Available Transcutaneous electrical stimulation can depolarize nerve or muscle cells applying impulses through electrodes attached on the skin. For these applications, the electrode-skin impedance is an important factor which influences effectiveness. Various models describe the interface using constant or current-depending resistive-capacitive equivalent circuit. Here, we develop a dynamic impedance model valid for a wide range stimulation intensities. The model considers electroporation and charge-dependent effects to describe the impedance variation, which allows to describe high-charge pulses. The parameters were adjusted based on rectangular, biphasic stimulation pulses generated by a stimulator, providing optionally current or voltage-controlled impulses, and applied through electrodes of different sizes. Both control methods deliver a different electrical field to the tissue, which is constant throughout the impulse duration for current-controlled mode or have a very current peak for voltage-controlled. The results show a predominant dependence in the current intensity in the case of both stimulation techniques that allows to keep a simple model. A verification simulation using the proposed dynamic model shows coefficient of determination of around 0.99 in both stimulation types. The presented method for fitting electrode-skin impedance can be simple extended to other stimulation waveforms and electrode configuration. Therefore, it can be embedded in optimization algorithms for designing electrical stimulation applications even for pulses with high charges and high current spikes.

  5. On the stability of the interface between dense plasma and liquid under electrical pulse discharge in liquid medium

    International Nuclear Information System (INIS)

    Starchyk, P.D.; Porytskyy, P.V.

    2005-01-01

    It is shown that the most important influence on the plasma of electrical pulse discharges in liquid have the processes in a zone of its contact with condensed medium. The investigations of growth of corrugations are conducted which arise on an interface between both the plasma channels of electrical pulse discharges and limiting it liquid. It is shown that the growth of perturbations caused by Rayleigh-Taylor instability are nonlinearly saturated. It is established the interconnection between both the pointed perturbations and the parameters of a dense plasma of discharge channel

  6. Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

    Science.gov (United States)

    Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

    2011-05-01

    Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

  7. Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

    CERN Document Server

    Poehlsen, Thomas

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

  8. Generation of complex motor patterns in american grasshopper via current-controlled thoracic electrical interfacing.

    Science.gov (United States)

    Giampalmo, Susan L; Absher, Benjamin F; Bourne, W Tucker; Steves, Lida E; Vodenski, Vassil V; O'Donnell, Peter M; Erickson, Jonathan C

    2011-01-01

    Micro-air vehicles (MAVs) have attracted attention for their potential application to military applications, environmental sensing, and search and rescue missions. While progress is being made toward fabrication of a completely human-engineered MAV, another promising approach seeks to interface to, and take control of, an insect's nervous system. Cyborg insects take advantage of their innate exquisite loco-motor, navigation, and sensing abilities. Recently, several groups have demonstrated the feasibility of radio-controlled flight in the hawkmoth and beetle via electrical neural interfaces. Here, we report a method for eliciting the "jump" response in the American grasshopper (S. Americana). We found that stimulating the metathoracic T3 ganglion with constant-current square wave pulses with amplitude 186 ± 40 μA and frequency 190 ± 13 Hz reproducibly evoked (≥95% success rate) the desired motor activity in N=3 test subjects. To the best of our knowledge, this is the first report of an insect cyborg with a synchronous neuromuscular system.

  9. Surface and interface sciences of Li-ion batteries. -Research progress in electrode-electrolyte interface-

    Science.gov (United States)

    Minato, Taketoshi; Abe, Takeshi

    2017-12-01

    The application potential of Li-ion batteries is growing as demand increases in different fields at various stages in energy systems, in addition to their conventional role as power sources for portable devices. In particular, applications in electric vehicles and renewable energy storage are increasing for Li-ion batteries. For these applications, improvements in battery performance are necessary. The Li-ion battery produces and stores electric power from the electrochemical redox reactions between the electrode materials. The interface between the electrodes and electrolyte strongly affects the battery performance because the charge transfer causing the electrode redox reaction begins at this interface. Understanding of the surface structure, electronic structure, and chemical reactions at the electrode-electrolyte interface is necessary to improve battery performance. However, the interface is located between the electrode and electrolyte materials, hindering the experimental analysis of the interface; thus, the physical properties and chemical processes have remained poorly understood until recently. Investigations of the physical properties and chemical processes at the interface have been performed using advanced surface science techniques. In this review, current knowledge and future research prospects regarding the electrode-electrolyte interface are described for the further development of Li-ion batteries.

  10. Electrical Crystallization Mechanism and Interface Characteristics of Nano wire Zn O/Al Structures Fabricated by the Solution Method

    International Nuclear Information System (INIS)

    Tseng, Y.W.; Hung, F.Y.; Lui, T.Sh.; Chen, Y.T.; Xiao, R.S.; Chen, K.J.

    2012-01-01

    Both solution nano wire Zn O and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nano structure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of Zn O wires to form aluminum doped zinc oxide (AZO)/Zn O wires. The Al doping concentration and the distance of the Zn O wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼211 degree C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.

  11. Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

    Science.gov (United States)

    Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

    2018-03-01

    In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

  12. A Human-machine-interface Integrating Low-cost Sensors with a Neuromuscular Electrical Stimulation System for Post-stroke Balance Rehabilitation.

    Science.gov (United States)

    Kumar, Deepesh; Das, Abhijit; Lahiri, Uttama; Dutta, Anirban

    2016-04-12

    A stroke is caused when an artery carrying blood from heart to an area in the brain bursts or a clot obstructs the blood flow to brain thereby preventing delivery of oxygen and nutrients. About half of the stroke survivors are left with some degree of disability. Innovative methodologies for restorative neurorehabilitation are urgently required to reduce long-term disability. The ability of the nervous system to reorganize its structure, function and connections as a response to intrinsic or extrinsic stimuli is called neuroplasticity. Neuroplasticity is involved in post-stroke functional disturbances, but also in rehabilitation. Beneficial neuroplastic changes may be facilitated with non-invasive electrotherapy, such as neuromuscular electrical stimulation (NMES) and sensory electrical stimulation (SES). NMES involves coordinated electrical stimulation of motor nerves and muscles to activate them with continuous short pulses of electrical current while SES involves stimulation of sensory nerves with electrical current resulting in sensations that vary from barely perceivable to highly unpleasant. Here, active cortical participation in rehabilitation procedures may be facilitated by driving the non-invasive electrotherapy with biosignals (electromyogram (EMG), electroencephalogram (EEG), electrooculogram (EOG)) that represent simultaneous active perception and volitional effort. To achieve this in a resource-poor setting, e.g., in low- and middle-income countries, we present a low-cost human-machine-interface (HMI) by leveraging recent advances in off-the-shelf video game sensor technology. In this paper, we discuss the open-source software interface that integrates low-cost off-the-shelf sensors for visual-auditory biofeedback with non-invasive electrotherapy to assist postural control during balance rehabilitation. We demonstrate the proof-of-concept on healthy volunteers.

  13. Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

    DEFF Research Database (Denmark)

    Trier, Felix; Amoruso, S.; Christensen, Dennis Valbjørn

    2013-01-01

    Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias...

  14. Prediction of novel interface-driven spintronic effects

    International Nuclear Information System (INIS)

    Bhattacharjee, Satadeep; Singh, Surendra; Bellaiche, L; Wang, D; Viret, M

    2014-01-01

    The recently proposed coupling between the angular momentum density and magnetic moment (Raeliarijaona et al 2013 Phys. Rev. Lett. 110 137205) is shown here to result in the prediction of (i) novel spin currents generated by an electrical current and (ii) new electrical currents induced by a spin current in systems possessing specific interfaces between two different materials. Some of these spin (electrical) currents can be reversed near the interface by reversing the applied electrical (spin) current. Similarities and differences between these novel spintronic effects and the well-known spin Hall and inverse spin Hall effects are also discussed. (paper)

  15. Electrical resistance imaging of a time-varying interface in stratified flows using an unscented Kalman filter

    International Nuclear Information System (INIS)

    Ijaz, Umer Zeeshan; Khambampati, Anil Kumar; Kim, Kyung Youn; Chung, Soon Il; Kim, Sin

    2008-01-01

    In this paper, we estimate a time-varying interfacial boundary in stratified flows of two immiscible liquids using electrical resistance tomography. The interfacial boundary is approximated with front points spaced discretely along the interface. The design variables to be estimated are the locations of the front points, which are varying with the moving interface. The inverse problem is treated as a stochastic nonlinear state estimation problem with the nonstationary phase boundary (state) being estimated with the aid of an unscented Kalman filter. Numerical experiments are performed to evaluate the performance of an unscented Kalman filter. Specifically, a detailed analysis has been done on the effect of the number of front points and contrast ratio on the reconstruction performance. The reconstruction results show that an unscented Kalman filter is better suited for estimation in comparison to the conventional extended Kalman filter

  16. The Ni-YSZ interface

    DEFF Research Database (Denmark)

    Jensen, Karin Vels

    The anode/electrolyte interface in solid oxide fuel cells (SOFC) is known to cause electrical losses. Geometrically simple Ni/yttria-stabilised zirconia (YSZ) interfaces were examined to gain information on the structural and chemical changes occurring during experiments at 1000°C in an atmosphere...... of 97% H2/3% H2O. Electrochemical impedance spectroscopy at open circuit voltage (OCV) and at anodic and cathodic polarisations (100 mV) was performed. A correlation of the electrical data with the structure development and the chemical composition was attempted. Nickel wires with different impurity...... between polarised and non-polarised samples. With pure nickel wires, however, the microstructures depended on the polarisation/non-polarisation conditions. At non-polarised conditions a hill and valley type structure was found. Anodic polarisation produced an up to 1 μm thick interface layer consisting...

  17. Electric vehicle equipment for grid-integrated vehicles

    Science.gov (United States)

    Kempton, Willett

    2013-08-13

    Methods, systems, and apparatus for interfacing an electric vehicle with an electric power grid are disclosed. An exemplary apparatus may include a station communication port for interfacing with electric vehicle station equipment (EVSE), a vehicle communication port for interfacing with a vehicle management system (VMS), and a processor coupled to the station communication port and the vehicle communication port to establish communication with the EVSE via the station communication port, receive EVSE attributes from the EVSE, and issue commands to the VMS to manage power flow between the electric vehicle and the EVSE based on the EVSE attributes. An electric vehicle may interface with the grid by establishing communication with the EVSE, receiving the EVSE attributes, and managing power flow between the EVE and the grid based on the EVSE attributes.

  18. Electrical Interfaces for Organic Nanodevices

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann

    Optoelectronic applications of organic semiconductor materials is a research field, which recently came to the large scale consumer market in display technologies. Organic semiconductors are mainly applied in amorphous form offering fabrication control on a large scale. Crystalline organic...... semiconductors, where the molecular packing is more crucial, have not yet had a major impact in commercial products. This thesis describes development of new ways to electrically contact organic semiconductors. In particular, crystalline organic para-hexaphenylene (p6P) nanofibers have been used...... approaches. Creating the separator by partly oxidizing an Al cathode anodically is considered the most promising implementation, however further development would be necessary. During the project a group of collaborators managed to obtain electrically stimulated light emission in organic p6P nanofibers...

  19. Inhomogeneity at the LaAlO3/SrTiO3 interface

    Science.gov (United States)

    Claeson, T.; Kalabukhov, A.; Gunnarsson, R.; Winkler, D.; Borjesson, J.; Ljustina, N.; Olsson, E.; Popok, V.; Boikov, Yu.; Serenkov, I.; Sakharov, V.

    2010-03-01

    High electrical conductivity has been reported for the interface between two wide-band gap insulators, LaAlO3 (LAO) and SrTiO3 (STO). It occurs above a critical thickness of LAO and can be tuned by an electric field. The conduction has been attributed to i) ``polar catastrophe'' , where the electrostatic charge at the interface is compensated by the transfer of half an electron per unit cell to the interface, ii) oxygen vacancies in the STO, and iii) cation intermixing, which may result in the formation of metallic La1-xSrxTiO3 layer. The relation between microstructure and electrical properties is crucial for understanding the origin of electrical conductivity. We have investigated the interface composition using medium-energy ion spectroscopy, high resolution electron microscopy, and Kelvin probe force microscopy. We find a correlation between cationic intermixing at the interface and electrical properties and inhomogeneities of the interface conductivity that may support a percolation model. Work supported by Swedish VR & KAW, Russian ISTC 3743, EC NANOXIDE

  20. Electrical behaviour of strontium-doped lanthanum manganite interfaces

    DEFF Research Database (Denmark)

    Koch, Søren; Hendriksen, P.V.; Jacobsen, Torben

    2005-01-01

    The contact resistance of strontium-doped lanthanum manganite (LSM) contact pairs is investigated by polarisation analysis at different temperatures and atmospheres. The ceramic contacts have a high contact resistance, and strongly nonlinear current–voltage behaviour is observed at low temperatur....... The nonlinear behaviour is ascribed to the presence of energy barriers at the contact interface. Generally, point contacts showed a more linear behaviour than plane contact interfaces....

  1. PREFACE: Functionalized Liquid Liquid Interfaces

    Science.gov (United States)

    Girault, Hubert; Kornyshev, Alexei A.; Monroe, Charles W.; Urbakh, Michael

    2007-09-01

    Most natural processes take place at interfaces. For this reason, surface science has been a focal point of modern research. At solid-liquid interfaces one can induce various species to adsorb or react, and thus may study interactions between the substrate and adsorbates, kinetic processes, optical properties, etc. Liquid-liquid interfaces, formed by immiscible liquids such as water and oil, have a number of distinctive features. Both sides of the interface are amenable to detailed physical and chemical analysis. By chemical or electrochemical means, metal or semiconductor nanoparticles can be formed or localised at the interface. Surfactants can be used to tailor surface properties, and also to place organic molecular or supermolecular constructions at the boundary between the liquids. Electric fields can be used to drive ions from one fluid to another, or even change the shape of the interface itself. In many cases, both liquids are optically transparent, making functionalized liquid-liquid interfaces promising for various optical applications based on the transmission or reflection of light. An advantage common to most of these systems is self-assembly; because a liquid-liquid interface is not mechanically constrained like a solid-liquid interface, it can easily access its most stable state, even after it has been driven far from equilibrium. This special issue focuses on four modes of liquid-liquid interfacial functionalization: the controlled adsorption of molecules or nanoparticles, the formation of adlayers or films, electrowetting, and ion transfer or interface-localized reactions. Interfacial adsorption can be driven electrically, chemically, or mechanically. The liquid-liquid interface can be used to study how anisotropic particles orient at a surface under the influence of a field, how surfactants interact with other adsorbates, and how nanoparticles aggregate; the transparency of the interface also makes the chirality of organic adsorbates amenable to

  2. Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

    Science.gov (United States)

    Suyatin, Dmitry B; Jain, Vishal; Nebol'sin, Valery A; Trägårdh, Johanna; Messing, Maria E; Wagner, Jakob B; Persson, Olof; Timm, Rainer; Mikkelsen, Anders; Maximov, Ivan; Samuelson, Lars; Pettersson, Håkan

    2014-01-01

    Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~10(17) m(-2)) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.

  3. Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

    Science.gov (United States)

    Badali, Yosef; Nikravan, Afsoun; Altındal, Şemsettin; Uslu, İbrahim

    2018-03-01

    The aim of this study is to improve the electrical property of Ag/n-Si metal-semiconductor (MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using electrospinning technique. To illustrate the utility of the Ru-doped PVP interface layer, current-voltage (I-V) characteristics of Ag/n-Si (MS) and Ag/Ru-doped PVP/n-Si metal-polymer-semiconductor (MPS) structures was carried out. In addition, the main electrical parameters of the fabricated Ag/Ru-doped PVP/n-Si structures were investigated as a function of frequency and electric field using impedance spectroscopy method (ISM). The capacitance-voltage (C-V) plot showed an anomalous peak in the depletion region due to the special density distribution of interface traps/states (D it /N ss) and interlayer. Both the values of series resistance (R s) and N ss were drawn as a function of voltage and frequency between 0.5 kHz and 5 MHz at room temperature and they had a peak behavior in the depletion region. Some important parameters of the sample such as the donor concentration atoms (N D), Fermi energy (E F ), thickness of the depletion region (W D), barrier height (Φ B0 ) and R s were determined from the C -2 versus V plot for each frequency. The values of N D , W D , Φ B0 and R s were changed from 1 × 1015 cm-3, 9.61 × 10-5 cm, 0.94 eV and 19,055 Ω (at 0.5 kHz) to 0.13 × 1015 cm-3, 27.4 × 10-4 cm, 1.04 eV and 70 Ω (at 5 MHz), respectively. As a result of the experiments, it is observed that the change in electrical parameters becomes more effective at lower frequencies due to the N ss and their relaxation time (τ), dipole and surface polarizations.

  4. Spray deposition of poly(3-hexylthiophene) and [6,6]-phenyl-C{sub 61}-butyric acid methyl ester blend under electric field for improved interface and organic solar cell characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Chaturvedi, Neha, E-mail: nchaturvedi9@gmail.com; Swami, Sanjay Kumar; Dutta, Viresh

    2016-01-01

    Spray process is used for the deposition of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) blend film under different voltages (0 V, 300 V, 500 V and 700 V) applied to the nozzle. The presence of the electric field during the spray process makes the P3HT:PCBM film smoother, uniform and more crystalline with well aligned domains. X-ray photoelectron spectroscopy study shows that PCBM rich surface is formed by application of the DC voltage (700 V) which improves the electron transport at the active layer and cathode interface. The application of electric field reduces the recombination at interfaces. The increased charge carrier separation between donor and acceptor at the interface and the crystallinity enhancement result in improved short circuit current density–voltage characteristics of Indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) /P3HT:PCBM/Aluminum solar cell. The organic bulk-heterojunction solar cell using the electric field assisted spray deposited PEDOT:PSS and P3HT:PCBM layers exhibited 84% and 154% increment in the short circuit current density and power conversion efficiency, respectively in comparison to the solar cell having spray deposited PEDOT:PSS and P3HT:PCBM layers in the absence of the electric field. - Highlights: • Spray deposition of P3HT:PCBM is carried out. • Spray deposition under electric field is done. • Electric field application enhanced the crystallinity of the layers. • P3HT:PCBM film arranged in more ordered form with electric field • Efficiency of organic solar cell is enhanced with application of electric field.

  5. Electrical Resistivity Imaging and the Saline Water Interface in High-Quality Coastal Aquifers

    Science.gov (United States)

    Costall, A.; Harris, B.; Pigois, J. P.

    2018-07-01

    Population growth and changing climate continue to impact on the availability of natural resources. Urbanization of vulnerable coastal margins can place serious demands on shallow groundwater. Here, groundwater management requires definition of coastal hydrogeology, particularly the seawater interface. Electrical resistivity imaging (ERI) appears to be ideally suited for this purpose. We investigate challenges and drivers for successful electrical resistivity imaging with field and synthetic experiments. Two decades of seawater intrusion monitoring provide a basis for creating a geo-electrical model suitable for demonstrating the significance of acquisition and inversion parameters on resistivity imaging outcomes. A key observation is that resistivity imaging with combinations of electrode arrays that include dipole-dipole quadrupoles can be configured to illuminate consequential elements of coastal hydrogeology. We extend our analysis of ERI to include a diverse set of hydrogeological settings along more than 100 km of the coastal margin passing the city of Perth, Western Australia. Of particular importance are settings with: (1) a classic seawater wedge in an unconfined aquifer, (2) a shallow unconfined aquifer over an impermeable substrate, and (3) a shallow multi-tiered aquifer system over a conductive impermeable substrate. We also demonstrate a systematic increase in the landward extent of the seawater wedge at sites located progressively closer to the highly urbanized center of Perth. Based on field and synthetic ERI experiments from a broad range of hydrogeological settings, we tabulate current challenges and future directions for this technology. Our research contributes to resolving the globally significant challenge of managing seawater intrusion at vulnerable coastal margins.

  6. Electrical Resistivity Imaging and the Saline Water Interface in High-Quality Coastal Aquifers

    Science.gov (United States)

    Costall, A.; Harris, B.; Pigois, J. P.

    2018-05-01

    Population growth and changing climate continue to impact on the availability of natural resources. Urbanization of vulnerable coastal margins can place serious demands on shallow groundwater. Here, groundwater management requires definition of coastal hydrogeology, particularly the seawater interface. Electrical resistivity imaging (ERI) appears to be ideally suited for this purpose. We investigate challenges and drivers for successful electrical resistivity imaging with field and synthetic experiments. Two decades of seawater intrusion monitoring provide a basis for creating a geo-electrical model suitable for demonstrating the significance of acquisition and inversion parameters on resistivity imaging outcomes. A key observation is that resistivity imaging with combinations of electrode arrays that include dipole-dipole quadrupoles can be configured to illuminate consequential elements of coastal hydrogeology. We extend our analysis of ERI to include a diverse set of hydrogeological settings along more than 100 km of the coastal margin passing the city of Perth, Western Australia. Of particular importance are settings with: (1) a classic seawater wedge in an unconfined aquifer, (2) a shallow unconfined aquifer over an impermeable substrate, and (3) a shallow multi-tiered aquifer system over a conductive impermeable substrate. We also demonstrate a systematic increase in the landward extent of the seawater wedge at sites located progressively closer to the highly urbanized center of Perth. Based on field and synthetic ERI experiments from a broad range of hydrogeological settings, we tabulate current challenges and future directions for this technology. Our research contributes to resolving the globally significant challenge of managing seawater intrusion at vulnerable coastal margins.

  7. Electric vehicle battery charging controller

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention provides an electric vehicle charging controller. The charging controller comprises a first interface connectable to an electric vehicle charge source for receiving a charging current, a second interface connectable to an electric vehicle for providing the charging current...... to a battery management system in the electric vehicle to charge a battery therein, a first communication unit for receiving a charging message via a communication network, and a control unit for controlling a charging current provided from the charge source to the electric vehicle, the controlling at least...... in part being performed in response to a first information associated with a charging message received by the first communication unit...

  8. Sample cell for studying liquid interfaces with an in situ electric field using X-ray reflectivity and application to clay particles at oil-oil interfaces.

    Science.gov (United States)

    Larsen, Simon R; Hansteen, Marie; Pacakova, Barbara; Theodor, Keld; Arnold, Thomas; Rennie, Adrian R; Helgesen, Geir; Knudsen, Kenneth D; Bordallo, Heloisa N; Fossum, Jon Otto; Cavalcanti, Leide P

    2018-05-01

    Commissioning results of a liquid sample cell for X-ray reflectivity studies with an in situ applied electrical field are presented. The cell consists of a Plexiglas container with lateral Kapton windows for air-liquid and liquid-liquid interface studies, and was constructed with grooves to accept plate electrodes on the walls parallel to the direction of the beam. Both copper and ITO plate electrodes have been used, the latter being useful for simultaneous optical studies. Commissioning tests were made at the I07 beamline of the Diamond Light Source. open access.

  9. Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3.

    Science.gov (United States)

    Vlašín, Ondřej; Jarrier, Romain; Arras, Rémi; Calmels, Lionel; Warot-Fonrose, Bénédicte; Marcelot, Cécile; Jamet, Matthieu; Ohresser, Philippe; Scheurer, Fabrice; Hertel, Riccardo; Herranz, Gervasi; Cherifi-Hertel, Salia

    2016-03-23

    Magnetoelectric coupling at multiferroic interfaces is a promising route toward the nonvolatile electric-field control of magnetization. Here, we use optical measurements to study the static and dynamic variations of the interface magnetization induced by an electric field in Co/PbZr0.2Ti0.8O3 (Co/PZT) bilayers at room temperature. The measurements allow us to identify different coupling mechanisms. We further investigate the local electronic and magnetic structure of the interface by means of transmission electron microscopy, soft X-ray magnetic circular dichroism, and density functional theory to corroborate the coupling mechanism. The measurements demonstrate a mixed linear and quadratic optical response to the electric field, which results from a magneto-electro-optical effect. We propose a decomposition method of the optical signal to discriminate between different components involved in the electric field-induced polarization rotation of the reflected light. This allows us to extract a signal that we can ascribe to interface magnetoelectric coupling. The associated surface magnetization exhibits a clear hysteretic variation of odd symmetry with respect to the electric field and nonzero remanence. The interface coupling is remarkably stable over a wide frequency range (1-50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.

  10. Local field distribution near corrugated interfaces: Green function formalism versus effective medium theory

    International Nuclear Information System (INIS)

    Choy, C.W.; Xiao, J.J.; Yu, K.W.

    2007-01-01

    The recent Green function formalism (GFF) has been used to study the local field distribution near a periodic interface separating two homogeneous media of different dielectric constants. In the GFF, the integral equations can be solved conveniently because of the existence of an analytic expression for the kernel (Greenian). However, due to a severe singularity in the Greenian, the formalism was formerly applied to compute the electric fields away from the interface region. In this work, we have succeeded in extending the GFF to compute the electric field inside the interface region by taking advantage of a sum rule. To our surprise, the strengths of the electric fields are quite similar in both media across the interface, despite of the large difference in dielectric constants. Moreover, we propose a simple effective medium approximation (EMA) to compute the electric field inside the interface region. We show that the EMA can indeed give an excellent description of the electric field, except near a surface plasmon resonance

  11. Flexible neural interfaces with integrated stiffening shank

    Energy Technology Data Exchange (ETDEWEB)

    Tooker, Angela C.; Felix, Sarah H.; Pannu, Satinderpall S.; Shah, Kedar G.; Sheth, Heeral; Tolosa, Vanessa

    2017-10-17

    A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

  12. Flexible neural interfaces with integrated stiffening shank

    Science.gov (United States)

    Tooker, Angela C.; Felix, Sarah H.; Pannu, Satinderpall S.; Shah, Kedar G.; Sheth, Heeral; Tolosa, Vanessa

    2016-07-26

    A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

  13. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

    Science.gov (United States)

    Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

    2017-10-01

    In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

  14. InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

    Science.gov (United States)

    Teubert, J.; Koslowski, S.; Lippert, S.; Schäfer, M.; Wallys, J.; Dimitrakopulos, G.; Kehagias, Th.; Komninou, Ph.; Das, A.; Monroy, E.; Eickhoff, M.

    2013-08-01

    We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.

  15. Graphene-interfaced electrical biosensor for label-free and sensitive detection of foodborne pathogenic E. coli O157:H7.

    Science.gov (United States)

    Pandey, Ashish; Gurbuz, Yasar; Ozguz, Volkan; Niazi, Javed H; Qureshi, Anjum

    2017-05-15

    E. coli O157:H7 is an enterohemorrhagic bacteria responsible for serious foodborne outbreaks that causes diarrhoea, fever and vomiting in humans. Recent foodborne E. coli outbreaks has left a serious concern to public health. Therefore, there is an increasing demand for a simple, rapid and sensitive method for pathogen detection in contaminated foods. In this study, we developed a label-free electrical biosensor interfaced with graphene for sensitive detection of pathogenic bacteria. This biosensor was fabricated by interfacing graphene with interdigitated microelectrodes of capacitors that were biofunctionalized with E. coli O157:H7 specific antibodies for sensitive pathogenic bacteria detection. Here, graphene nanostructures on the sensor surface provided superior chemical properties such as high carrier mobility and biocompatibility with antibodies and bacteria. The sensors transduced the signal based on changes in dielectric properties (capacitance) through (i) polarization of captured cell-surface charges, (ii) cells' internal bioactivity, (iii) cell-wall's electronegativity or dipole moment and their relaxation and (iv) charge carrier mobility of graphene that modulated the electrical properties once the pathogenic E. coli O157:H7 captured on the sensor surface. Sensitive capacitance changes thus observed with graphene based capacitors were specific to E. coli O157:H7 strain with a sensitivity as low as 10-100 cells/ml. The proposed graphene based electrical biosensor provided advantages of speed, sensitivity, specificity and in-situ bacterial detection with no chemical mediators, represents a versatile approach for detection of a wide variety of other pathogens. Copyright © 2016 Elsevier B.V. All rights reserved.

  16. A Hands-Free Interface for Controlling Virtual Electric-Powered Wheelchairs

    Directory of Open Access Journals (Sweden)

    Tauseef Gulrez

    2016-03-01

    Full Text Available This paper focuses on how to provide mobility to people with motor impairments with the integration of robotics and wearable computing systems. The burden of learning to control powered mobility devices should not fall entirely on the people with disabilities. Instead, the system should be able to learn the user's movements. This requires learning the degrees of freedom of user movement, and mapping these degrees of freedom onto electric-powered wheelchair (EPW controls. Such mapping cannot be static because in some cases users will eventually improve with practice. Our goal in this paper is to present a hands-free interface (HFI that can be customized to the varying needs of EPW users with appropriate mapping between the users' degrees of freedom and EPW controls. EPW users with different impairment types must learn how to operate a wheelchair with their residual body motions. EPW interfaces are often customized to fit their needs. An HFI utilizes the signals generated by the user's voluntary shoulder and elbow movements and translates them into an EPW control scheme. We examine the correlation of kinematics that occur during moderately paced repetitive elbow and shoulder movements for a range of motion. The output of upper-limb movements (shoulder and elbows was tested on six participants, and compared with an output of a precision position tracking (PPT optical system for validation. We find strong correlations between the HFI signal counts and PPT optical system during different upper-limb movements (ranged from r = 0.86 to 0.94. We also tested the HFI performance in driving the EPW in a virtual reality environment on a spinal-cord-injured (SCI patient. The results showed that the HFI was able to adapt and translate the residual mobility of the SCI patient into efficient control commands within a week's training. The results are encouraging for the development of more efficient HFIs, especially for wheelchair users.

  17. Fracture mechanics of piezoelectric solids with interface cracks

    CERN Document Server

    Govorukha, Volodymyr; Loboda, Volodymyr; Lapusta, Yuri

    2017-01-01

    This book provides a comprehensive study of cracks situated at the interface of two piezoelectric materials. It discusses different electric boundary conditions along the crack faces, in particular the cases of electrically permeable, impermeable, partially permeable, and conducting cracks. The book also elaborates on a new technique for the determination of electromechanical fields at the tips of interface cracks in finite sized piezoceramic bodies of arbitrary shape under different load types. It solves scientific problems of solid mechanics in connection with the investigation of electromechanical fields in piezoceramic bodies with interface cracks, and develops calculation models and solution methods for plane fracture mechanical problems for piecewise homogeneous piezoceramic bodies with cracks at the interfaces. It discusses the “open” crack model, which leads to a physically unrealistic oscillating singularity at the crack tips, and the contact zone model for in-plane straight interface cracks betw...

  18. Implantable Neural Interfaces for Sharks

    Science.gov (United States)

    2007-05-01

    technology for recording and stimulating from the auditory and olfactory sensory nervous systems of the awake, swimming nurse shark , G. cirratum (Figures...overlay of the central nervous system of the nurse shark on a horizontal MR image. Implantable Neural Interfaces for Sharks ...Neural Interfaces for Characterizing Population Responses to Odorants and Electrical Stimuli in the Nurse Shark , Ginglymostoma cirratum.” AChemS Abs

  19. An interface tracking model for droplet electrocoalescence.

    Energy Technology Data Exchange (ETDEWEB)

    Erickson, Lindsay Crowl

    2013-09-01

    This report describes an Early Career Laboratory Directed Research and Development (LDRD) project to develop an interface tracking model for droplet electrocoalescence. Many fluid-based technologies rely on electrical fields to control the motion of droplets, e.g. microfluidic devices for high-speed droplet sorting, solution separation for chemical detectors, and purification of biodiesel fuel. Precise control over droplets is crucial to these applications. However, electric fields can induce complex and unpredictable fluid dynamics. Recent experiments (Ristenpart et al. 2009) have demonstrated that oppositely charged droplets bounce rather than coalesce in the presence of strong electric fields. A transient aqueous bridge forms between approaching drops prior to pinch-off. This observation applies to many types of fluids, but neither theory nor experiments have been able to offer a satisfactory explanation. Analytic hydrodynamic approximations for interfaces become invalid near coalescence, and therefore detailed numerical simulations are necessary. This is a computationally challenging problem that involves tracking a moving interface and solving complex multi-physics and multi-scale dynamics, which are beyond the capabilities of most state-of-the-art simulations. An interface-tracking model for electro-coalescence can provide a new perspective to a variety of applications in which interfacial physics are coupled with electrodynamics, including electro-osmosis, fabrication of microelectronics, fuel atomization, oil dehydration, nuclear waste reprocessing and solution separation for chemical detectors. We present a conformal decomposition finite element (CDFEM) interface-tracking method for the electrohydrodynamics of two-phase flow to demonstrate electro-coalescence. CDFEM is a sharp interface method that decomposes elements along fluid-fluid boundaries and uses a level set function to represent the interface.

  20. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Yamaguchi, Masashi [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  1. Synthesis and electrical transport properties of the LaVO{sub 3}/SrTiO{sub 3} interface

    Energy Technology Data Exchange (ETDEWEB)

    Hentrich, Richard; Schultz, Ludwig; Huehne, Ruben [IFW Dresden (Germany); Haenisch, Jens [IFW Dresden (Germany); ITEP, Karlsruhe Institute of Technology (KIT) (Germany)

    2015-07-01

    We have investigated the two dimensional electron gas at the interface of band gap insulator SrTiO{sub 3} and mott insulator LaVO{sub 3} in comparison to the well-known, purely band insulating LaAlO{sub 3}/SrTiO{sub 3} system. Thin films of LaVO{sub 3} were grown epitaxially on TiO{sub 2} terminated SrTiO{sub 3} single crystal substrates using RHEED-monitored pulsed laser deposition. Optimal process parameters for layer-by-layer growth were found resulting in the growth of atomically smooth films of well-defined thickness. Electrical transport measurements revealed an insulator-metal transition at a film thickness of six unit cells, which is different to previously reported values. Conducting samples showed metallic behavior in a wide temperature range, with their conductivity showing little to no dependence on layer thickness. This led to the conclusion of the metallic behavior being a merely interface driven effect.

  2. Poled-glass devices: Influence of surfaces and interfaces

    DEFF Research Database (Denmark)

    Fage-Pedersen, Jacob; Jacobsen, Rune Shim; Kristensen, Martin

    2007-01-01

    Devices in periodically poled glass must have a large periodic variation of the built-in field. We show that the periodic variation can be severely degraded by charge dynamics taking place at the external (glass–air) interface or at internal (glass–glass) interfaces if the interfaces have...... the device, one can reveal the existence of imperfect interfaces by use of electric field induced second-harmonic generation....

  3. Metal-semiconductor interface in extreme temperature conditions

    International Nuclear Information System (INIS)

    Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

    2008-01-01

    We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

  4. Enhancing performance of a motor imagery based brain-computer interface by incorporating electrical stimulation-induced SSSEP

    Science.gov (United States)

    Yi, Weibo; Qiu, Shuang; Wang, Kun; Qi, Hongzhi; Zhao, Xin; He, Feng; Zhou, Peng; Yang, Jiajia; Ming, Dong

    2017-04-01

    Objective. We proposed a novel simultaneous hybrid brain-computer interface (BCI) by incorporating electrical stimulation into a motor imagery (MI) based BCI system. The goal of this study was to enhance the overall performance of an MI-based BCI. In addition, the brain oscillatory pattern in the hybrid task was also investigated. Approach. 64-channel electroencephalographic (EEG) data were recorded during MI, selective attention (SA) and hybrid tasks in fourteen healthy subjects. In the hybrid task, subjects performed MI with electrical stimulation which was applied to bilateral median nerve on wrists simultaneously. Main results. The hybrid task clearly presented additional steady-state somatosensory evoked potential (SSSEP) induced by electrical stimulation with MI-induced event-related desynchronization (ERD). By combining ERD and SSSEP features, the performance in the hybrid task was significantly better than in both MI and SA tasks, achieving a ~14% improvement in total relative to the MI task alone and reaching ~89% in mean classification accuracy. On the contrary, there was no significant enhancement obtained in performance while separate ERD feature was utilized in the hybrid task. In terms of the hybrid task, the performance using combined feature was significantly better than using separate ERD or SSSEP feature. Significance. The results in this work validate the feasibility of our proposed approach to form a novel MI-SSSEP hybrid BCI outperforming a conventional MI-based BCI through combing MI with electrical stimulation.

  5. Electrode interface controlled electrical properties in epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} films grown on Si substrates with SrTiO{sub 3} buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Boni, Andra Georgia, E-mail: andra.boni@infim.ro [National Institute of Materials Physics, Atomistilor 105bis, Magurele, Ilfov 77125 (Romania); University of Bucharest, Faculty of Physics, Magurele 077125 (Romania); Chirila, Cristina; Pasuk, Iuliana; Negrea, Raluca; Trupina, Lucian [National Institute of Materials Physics, Atomistilor 105bis, Magurele, Ilfov 77125 (Romania); Le Rhun, Gwenael [CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Vilquin, Bertrand [Université de Lyon, Ecole Centrale de Lyon, INL, CNRS UMR5270, 36 avenue Guy de Collongue, F-69134 Ecully cedex (France); Pintilie, Ioana; Pintilie, Lucian [National Institute of Materials Physics, Atomistilor 105bis, Magurele, Ilfov 77125 (Romania)

    2015-10-30

    Electrical properties of ferroelectric capacitors based on PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} thin films grown by pulsed laser deposition on silicon substrate with SrTiO{sub 3} buffer layer grown by molecular beam epitaxy were studied. A SrRuO{sub 3} layer was deposited as bottom electrode also by pulse laser deposition and Pt, Ir, Ru, SrRuO{sub 3} were used as top contacts. Electrical characterization comprised hysteresis and capacitance–voltage measurements in the temperature range from 150 K to 400 K. It was found that the macroscopic electrical properties are affected by the electrode interface, by the choice of the top electrode. However, even for metals with very different work functions (e.g. Pt and SrRuO{sub 3}) the properties of the top and bottom electrode interfaces remain fairly symmetric suggesting a strong influence from the bound polarization charges located near the interface. - Highlights: • Ferroelectric capacitors based on PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} were deposited on Si substrate. • The structural characterization proved the epitaxial growth of the layers. • Macroscopic electrical properties are affected by the choice of the top electrode. • The difference on imprint field, dielectric constant are analyzed depending on the electrode-ferroelectric interface.

  6. Interface recombination influence on carrier transport

    International Nuclear Information System (INIS)

    Konin, A

    2013-01-01

    A theory of interface recombination in the semiconductor–semiconductor junction is developed. The interface recombination rate dependence on the nonequilibrium carrier densities is derived on the basis of a model in which the interface recombination occurs through the mechanism of trapping. The general relation between the interface recombination parameters at small carrier density deviation from the equilibrium ones is obtained. The validity of this relation is proved considering the generation of the Hall electric field in the extrinsic semiconductor sample. The anomalous Hall electromotive force in a weak magnetic field was investigated and interpreted by means of a new interface recombination model. The experimental data corroborate the developed theory. (paper)

  7. Local Electronic And Dielectric Properties at Nanosized Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Bonnell, Dawn A. [Univ. of Pennsylvania, Philadelphia, PA (United States)

    2015-02-23

    Final Report to the Department of Energy for period 6/1/2000 to 11/30/2014 for Grant # DE-FG02-00ER45813-A000 to the University of Pennsylvania Local Electronic And Dielectric Properties at Nanosized Interfaces PI: Dawn Bonnell The behavior of grain boundaries and interfaces has been a focus of fundamental research for decades because variations of structure and composition at interfaces dictate mechanical, electrical, optical and dielectric properties in solids. Similarly, the consequence of atomic and electronic structures of surfaces to chemical and physical interactions are critical due to their implications to catalysis and device fabrication. Increasing fundamental understanding of surfaces and interfaces has materially advanced technologies that directly bear on energy considerations. Currently, exciting developments in materials processing are enabling creative new electrical, optical and chemical device configurations. Controlled synthesis of nanoparticles, semiconducting nanowires and nanorods, optical quantum dots, etc. along with a range of strategies for assembling and patterning nanostructures portend the viability of new devices that have the potential to significantly impact the energy landscape. As devices become smaller the impact of interfaces and surfaces grows geometrically. As with other nanoscale phenomena, small interfaces do not exhibit the same properties as do large interfaces. The size dependence of interface properties had not been explored and understanding at the most fundamental level is necessary to the advancement of nanostructured devices. An equally important factor in the behavior of interfaces in devices is the ability to examine the interfaces under realistic conditions. For example, interfaces and boundaries dictate the behavior of oxide fuel cells which operate at extremely high temperatures in dynamic high pressure chemical environments. These conditions preclude the characterization of local properties during fuel cell

  8. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  9. Driving Interface Based on Tactile Sensors for Electric Wheelchairs or Trolleys

    Directory of Open Access Journals (Sweden)

    Andrés Trujillo-León

    2014-02-01

    Full Text Available This paper introduces a novel device based on a tactile interface to replace the attendant joystick in electric wheelchairs. It can also be used in other vehicles such as shopping trolleys. Its use allows intuitive driving that requires little or no training, so its usability is high. This is achieved by a tactile sensor located on the handlebar of the chair or trolley and the processing of the information provided by it. When the user interacts with the handle of the chair or trolley, he or she exerts a pressure pattern that depends on the intention to accelerate, brake or turn to the left or right. The electronics within the device then perform the signal conditioning and processing of the information received, identifying the intention of the user on the basis of this pattern using an algorithm, and translating it into control signals for the control module of the wheelchair. These signals are equivalent to those provided by a joystick. This proposal aims to help disabled people and their attendees and prolong the personal autonomy in a context of aging populations.

  10. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  11. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  12. Scalable coherent interface

    International Nuclear Information System (INIS)

    Alnaes, K.; Kristiansen, E.H.; Gustavson, D.B.; James, D.V.

    1990-01-01

    The Scalable Coherent Interface (IEEE P1596) is establishing an interface standard for very high performance multiprocessors, supporting a cache-coherent-memory model scalable to systems with up to 64K nodes. This Scalable Coherent Interface (SCI) will supply a peak bandwidth per node of 1 GigaByte/second. The SCI standard should facilitate assembly of processor, memory, I/O and bus bridge cards from multiple vendors into massively parallel systems with throughput far above what is possible today. The SCI standard encompasses two levels of interface, a physical level and a logical level. The physical level specifies electrical, mechanical and thermal characteristics of connectors and cards that meet the standard. The logical level describes the address space, data transfer protocols, cache coherence mechanisms, synchronization primitives and error recovery. In this paper we address logical level issues such as packet formats, packet transmission, transaction handshake, flow control, and cache coherence. 11 refs., 10 figs

  13. An improved interface for capillary zone electrophoresis-mass spectrometry

    International Nuclear Information System (INIS)

    Smith, R.D.; Loo, J.A.; Barinaga, C.J.; Udseth, H.R.

    1988-06-01

    We have recently developed an improved electrospray ionization interface for capillary electrophoresis mass-spectrometry (CZE-MS). Our initial interface employed a vacuum deposited metal film at the exit of the capillary to make an electrical contact with he eluting buffer and establish the electrospray field gradient. This interface did, however, impose significant limitations on the range of capillary electrophoretic (CE) separations that could be performed. To circumvent these limitations, an interface that does not require a metalized tip was designed nd developed. In the new approach, the electrical contact at the column exit is made through a flowing liquid sheath. The principal advantage of this interface is that it allows operation with a much broader range of electrophoresis conditions. The sheath flow can be readily varied in both composition and volume. An electrospray ionization spectrum is given for a previously intractable buffer solution. 5 refs., 2 figs

  14. Charge interaction between particle-laden fluid interfaces.

    Science.gov (United States)

    Xu, Hui; Kirkwood, John; Lask, Mauricio; Fuller, Gerald

    2010-03-02

    Experiments are described where two oil/water interfaces laden with charged particles move at close proximity relative to one another. The particles on one of the interfaces were observed to be attracted toward the point of closest approach, forming a denser particle monolayer, while the particles on the opposite interface were repelled away from this point, forming a particle depletion zone. Such particle attraction/repulsion was observed even if one of the interfaces was free of particles. This phenomenon can be explained by the electrostatic interaction between the two interfaces, which causes surface charges (charged particles and ions) to redistribute in order to satisfy surface electric equipotential at each interface. In a forced particle oscillation experiment, we demonstrated the control of charged particle positions on the interface by manipulating charge interaction between interfaces.

  15. Electric field induced dewetting at polymer/polymer interfaces

    NARCIS (Netherlands)

    Lin, Z.Q.; Kerle, T.; Russell, T.P.; Schäffer, E.; Steiner, U

    2002-01-01

    External electric fields were used to amplify interfacial fluctuations in the air/polymer/polymer system where one polymer dewets the other. Two different hydrodynamic regimes were found as a function of electric field strength. If heterogeneous nucleation leads to the formation of holes before the

  16. Deposition temperature effect on electrical properties and interface of high-k ZrO{sub 2} capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joo-Hyung; Ignatova, Velislava A [Fraunhofer Institute, Center of Nanoelectronic Technologies (CNT), Koenigsbruecker Str., 01099 Dresden (Germany); Heitmann, Johannes; Oberbeck, Lars [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Str. 180, 01099 Dresden (Germany)], E-mail: joo-hyung.kim@inha.ac.kr

    2008-09-07

    The electrical characteristics, i.e. leakage current and capacitance, of ZrO{sub 2} based metal-insulator-metal structures, grown at 225, 250 and 275 deg, C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 deg. C deposition temperature, while the highest dielectric constant (k {approx} 43) was measured for the samples grown at 275 {sup 0}C, most probably due to the formation of tetragonal/cubic phases in the ZrO{sub 2} layer. We have shown that the main leakage current of these ZrO{sub 2} capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 {sup 0}C deposition temperature the oxygen content at and beyond the ZrO{sub 2}/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiO{sub x}N{sub y} interface layer. At and above 275 deg. C the ZrO{sub 2} layer changes its structure and becomes crystalline as proven by XRD analysis. (fast track communication)

  17. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  18. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

    International Nuclear Information System (INIS)

    Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

    2014-01-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

  19. Engineering brain-computer interfaces: past, present and future.

    Science.gov (United States)

    Hughes, M A

    2014-06-01

    Electricity governs the function of both nervous systems and computers. Whilst ions move in polar fluids to depolarize neuronal membranes, electrons move in the solid-state lattices of microelectronic semiconductors. Joining these two systems together, to create an iono-electric brain-computer interface, is an immense challenge. However, such interfaces offer (and in select clinical contexts have already delivered) a method of overcoming disability caused by neurological or musculoskeletal pathology. To fulfill their theoretical promise, several specific challenges demand consideration. Rate-limiting steps cover a diverse range of disciplines including microelectronics, neuro-informatics, engineering, and materials science. As those who work at the tangible interface between brain and outside world, neurosurgeons are well placed to contribute to, and inform, this cutting edge area of translational research. This article explores the historical background, status quo, and future of brain-computer interfaces; and outlines the challenges to progress and opportunities available to the clinical neurosciences community.

  20. Invasive Intraneural Interfaces: Foreign Body Reaction Issues

    Science.gov (United States)

    Lotti, Fiorenza; Ranieri, Federico; Vadalà, Gianluca; Zollo, Loredana; Di Pino, Giovanni

    2017-01-01

    Intraneural interfaces are stimulation/registration devices designed to couple the peripheral nervous system (PNS) with the environment. Over the last years, their use has increased in a wide range of applications, such as the control of a new generation of neural-interfaced prostheses. At present, the success of this technology is limited by an electrical impedance increase, due to an inflammatory response called foreign body reaction (FBR), which leads to the formation of a fibrotic tissue around the interface, eventually causing an inefficient transduction of the electrical signal. Based on recent developments in biomaterials and inflammatory/fibrotic pathologies, we explore and select the biological solutions that might be adopted in the neural interfaces FBR context: modifications of the interface surface, such as organic and synthetic coatings; the use of specific drugs or molecular biology tools to target the microenvironment around the interface; the development of bio-engineered-scaffold to reduce immune response and promote interface-tissue integration. By linking what we believe are the major crucial steps of the FBR process with related solutions, we point out the main issues that future research has to focus on: biocompatibility without losing signal conduction properties, good reproducible in vitro/in vivo models, drugs exhaustion and undesired side effects. The underlined pros and cons of proposed solutions show clearly the importance of a better understanding of all the molecular and cellular pathways involved and the need of a multi-target action based on a bio-engineered combination approach. PMID:28932181

  1. The electric field at hole injecting metal/organic interfaces as a cause for manifestation of exponential bias-dependent mobility

    International Nuclear Information System (INIS)

    Cvikl, B.

    2014-01-01

    It is shown that the well-known empirical exponential bias-dependent mobility is an approximation function of the relevant term emerging in the Mott–Gurney space charge limited current model when the constant non-zero electric field at the hole injecting metal/organic interface E int is taken into account. The term in question is the product of the bias-independent (but organic layer thickness-dependent) effective mobility coefficient and the algebraic function, f(λ), of the argument λ = E int /E a , where E a is the externally applied electric field. On account of the non-zero interfacial field, E int , the singularity of the spatial dependence of the hole current density, p(x), is removed. The resulting hole drift current density, j, is tested as a function of E a against a number of published room temperature hole current j–E a data sets, all characterized by good ohmic contact at the hole injecting interface. It is shown that the calculated current density provides a very good fit to the measurements within a high range of E a intervals. Low values of E a , are investigated analytically under the assumption of hole drift-diffusion. The extremely large internal electric fields at the anode/organic junction indicate drift-diffusion to be an improbable process for the structures investigated. However, a description of hole transport throughout the whole interval of experimental E a values may be obtained at low values of E a by an extended Mark–Helfrich drift model with traps occupying the exponentially distributed energy levels, followed by the extended Mott–Gurney model description within the remaining part of the E a interval. In both models the same (bias-independent) effective mobility coefficient is incorporated into the calculations. The results present evidence that within the framework of the extended Mott–Gurney expression the properly derived term should replace the empirical exponential bias-dependent mobility, making it redundant in the

  2. A novel flexible cuff-like microelectrode for dual purpose, acute and chronic electrical interfacing with the mouse cervical vagus nerve

    Science.gov (United States)

    Caravaca, A. S.; Tsaava, T.; Goldman, L.; Silverman, H.; Riggott, G.; Chavan, S. S.; Bouton, C.; Tracey, K. J.; Desimone, R.; Boyden, E. S.; Sohal, H. S.; Olofsson, P. S.

    2017-12-01

    Objective. Neural reflexes regulate immune responses and homeostasis. Advances in bioelectronic medicine indicate that electrical stimulation of the vagus nerve can be used to treat inflammatory disease, yet the understanding of neural signals that regulate inflammation is incomplete. Current interfaces with the vagus nerve do not permit effective chronic stimulation or recording in mouse models, which is vital to studying the molecular and neurophysiological mechanisms that control inflammation homeostasis in health and disease. We developed an implantable, dual purpose, multi-channel, flexible ‘microelectrode’ array, for recording and stimulation of the mouse vagus nerve. Approach. The array was microfabricated on an 8 µm layer of highly biocompatible parylene configured with 16 sites. The microelectrode was evaluated by studying the recording and stimulation performance. Mice were chronically implanted with devices for up to 12 weeks. Main results. Using the microelectrode in vivo, high fidelity signals were recorded during physiological challenges (e.g potassium chloride and interleukin-1β), and electrical stimulation of the vagus nerve produced the expected significant reduction of blood levels of tumor necrosis factor (TNF) in endotoxemia. Inflammatory cell infiltration at the microelectrode 12 weeks of implantation was limited according to radial distribution analysis of inflammatory cells. Significance. This novel device provides an important step towards a viable chronic interface for cervical vagus nerve stimulation and recording in mice.

  3. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  4. Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

    International Nuclear Information System (INIS)

    He, Guan-Ru; Lin, Yow-Jon; Chang, Hsing-Cheng; Chen, Ya-Hui

    2012-01-01

    The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H 2 O 2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H 2 O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi x O y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H 2 O 2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. - Highlights: ► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched. ► The n-ZnO/p-Si diode without H 2 O 2 treatment showed a poor rectifying behavior. ► The n-ZnO/H 2 O 2 -treated p-Si diode showed a good rectifying behavior. ► The enhanced responsivity can be interpreted by the device rectifying performance.

  5. An induced current method for measuring zeta potential of electrolyte solution-air interface.

    Science.gov (United States)

    Song, Yongxin; Zhao, Kai; Wang, Junsheng; Wu, Xudong; Pan, Xinxiang; Sun, Yeqing; Li, Dongqing

    2014-02-15

    This paper reports a novel and very simple method for measuring the zeta potential of electrolyte solution-air interface. When a measuring electrode contacts the electrolyte solution-air interface, an electrical current will be generated due to the potential difference between the electrode-air surface and the electrolyte solution-air interface. The amplitude of the measured electric signal is linearly proportional to this potential difference; and depends only on the zeta potential at the electrolyte solution-air interface, regardless of the types and concentrations of the electrolyte. A correlation between the zeta potential and the measured voltage signal is obtained based on the experimental data. Using this equation, the zeta potential of any electrolyte solution-air interface can be evaluated quickly and easily by inserting an electrode through the electrolyte solution-air interface and measuring the electrical signal amplitude. This method was verified by comparing the obtained results of NaCl, MgCl2 and CaCl2 solutions of different pH values and concentrations with the zeta potential data reported in the published journal papers. Copyright © 2013 Elsevier Inc. All rights reserved.

  6. Intelligent Electric Vehicle Integration - Domain Interfaces and Supporting Informatics

    DEFF Research Database (Denmark)

    Andersen, Peter Bach

    This thesis seeks to apply the field of informatics to the intelligent integration of electric vehicles into the power system. The main goal is to release the potential of electric vehicles in relation to a reliable, economically efficient power system based on renewables. To make intelligent EV...... and services in which the electric vehicle may be best suited to participate. The next stakeholder investigated is the distribution system operator representing the low voltage grid. The challenge is assessed by considering a number of grid impacts studies. Next, a set of grid congestion mitigation strategies...

  7. Electrical Breakdown Phenomena Involving Material Interfaces

    Science.gov (United States)

    2013-06-01

    create ozone through chemical reactions involving reactive species created by the electrical discharge [3]. The glow discharge breakdown in such...2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Investigation Of Pre-Ionization And Atmospheric Pulsed Discharge Plasma 5a...growth of the air discharge in the form of a conductive filament consisting of electrons and ions. This filament is created by temporal pulse that

  8. Interactive learning software for electrical engineering subjects ...

    African Journals Online (AJOL)

    Interactive learning software for electrical engineering subjects using MATLAB and ... Keywords: electrical engineering; MATLAB; graphic user interface (GUI); educational software. Full Text: EMAIL FREE FULL TEXT EMAIL FREE FULL TEXT

  9. Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfaces

    NARCIS (Netherlands)

    Alon, Hadas; Garrick, Rachel; Pujari, Sidharam P.; Toledano, Tal; Sinai, Ofer; Kedem, Nir; Bendikov, Tatyana; Baio, Joe E.; Weidner, Tobias; Zuilhof, Han; Cahen, David; Kronik, Leeor; Sukenik, Chaim N.; Vilan, Ayelet

    2018-01-01

    Molecular monolayers at metal/semiconductor heterointerfaces affect electronic energy level alignment at the interface by modifying the interface's electrical dipole. On a free surface, the molecular dipole is usually manipulated by means of substitution at its external end. However, at an interface

  10. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

    2012-01-01

    in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices

  11. Thermoelectric energy recovery at ionic-liquid/electrode interface

    Energy Technology Data Exchange (ETDEWEB)

    Bonetti, Marco; Nakamae, Sawako; Huang, Bo Tao; Wiertel-Gasquet, Cécile; Roger, Michel [Service de Physique de l’Etat Condensé, CEA-IRAMIS-SPEC, CNRS-UMR 3680, CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Salez, Thomas J. [Service de Physique de l’Etat Condensé, CEA-IRAMIS-SPEC, CNRS-UMR 3680, CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); École des Ponts ParisTech, 6 et 8 avenue Blaise Pascal, Champs-sur-Marne, F-77455 Marne-la-Vallée (France)

    2015-06-28

    A thermally chargeable capacitor containing a binary solution of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)-imide in acetonitrile is electrically charged by applying a temperature gradient to two ideally polarisable electrodes. The corresponding thermoelectric coefficient is −1.7 mV/K for platinum foil electrodes and −0.3 mV/K for nanoporous carbon electrodes. Stored electrical energy is extracted by discharging the capacitor through a resistor. The measured capacitance of the electrode/ionic-liquid interface is 5 μF for each platinum electrode while it becomes four orders of magnitude larger, ≈36 mF, for a single nanoporous carbon electrode. Reproducibility of the effect through repeated charging-discharging cycles under a steady-state temperature gradient demonstrates the robustness of the electrical charging process at the liquid/electrode interface. The acceleration of the charging by convective flows is also observed. This offers the possibility to convert waste-heat into electric energy without exchanging electrons between ions and electrodes, in contrast to what occurs in most thermogalvanic cells.

  12. Vibrational Stark Effect of the Electric-Field Reporter 4-Mercaptobenzonitrile as a Tool for Investigating Electrostatics at Electrode/SAM/Solution Interfaces

    Directory of Open Access Journals (Sweden)

    Peter Hildebrandt

    2012-06-01

    Full Text Available 4-mercaptobenzonitrile (MBN in self-assembled monolayers (SAMs on Au and Ag electrodes was studied by surface enhanced infrared absorption and Raman spectroscopy, to correlate the nitrile stretching frequency with the local electric field exploiting the vibrational Stark effect (VSE. Using MBN SAMs in different metal/SAM interfaces, we sorted out the main factors controlling the nitrile stretching frequency, which comprise, in addition to external electric fields, the metal-MBN bond, the surface potential, and hydrogen bond interactions. On the basis of the linear relationships between the nitrile stretching and the electrode potential, an electrostatic description of the interfacial potential distribution is presented that allows for determining the electric field strengths on the SAM surface, as well as the effective potential of zero-charge of the SAM-coated metal. Comparing this latter quantity with calculated values derived from literature data, we note a very good agreement for Au/MBN but distinct deviations for Ag/MBN which may reflect either the approximations and simplifications of the model or the uncertainty in reported structural parameters for Ag/MBN. The present electrostatic model consistently explains the electric field strengths for MBN SAMs on Ag and Au as well as for thiophenol and mercaptohexanoic acid SAMs with MBN incorporated as a VSE reporter.

  13. Electrical control of Faraday rotation at a liquid-liquid interface.

    Science.gov (United States)

    Marinescu, Monica; Kornyshev, Alexei A; Flatté, Michael E

    2015-01-01

    A theory is developed for the Faraday rotation of light from a monolayer of charged magnetic nanoparticles at an electrified liquid-liquid interface. The polarization fields of neighboring nanoparticles enhance the Faraday rotation. At such interfaces, and for realistic sizes and charges of nanoparticles, their adsorption-desorption can be controlled with a voltage variationFaraday rotation. A calculation based on the Maxwell-Garnett theory predicts that the corresponding redistribution of 40 nm nanoparticles of yttrium iron garnet can switch a cavity with a quality factor larger than 10(4) for light of wavelength 500 nm at normal incidence.

  14. Incorporating an optical waveguide into a neural interface

    Energy Technology Data Exchange (ETDEWEB)

    Tolosa, Vanessa; Delima, Terri L.; Felix, Sarah H.; Pannu, Satinderpall S.; Shah, Kedar G.; Sheth, Heeral; Tooker, Angela C.

    2016-11-08

    An optical waveguide integrated into a multielectrode array (MEA) neural interface includes a device body, at least one electrode in the device body, at least one electrically conducting lead coupled to the at least one electrode, at least one optical channel in the device body, and waveguide material in the at least one optical channel. The fabrication of a neural interface device includes the steps of providing a device body, providing at least one electrode in the device body, providing at least one electrically conducting lead coupled to the at least one electrode, providing at least one optical channel in the device body, and providing a waveguide material in the at least one optical channel.

  15. Conductive nanogel-interfaced neural microelectrode arrays with electrically controlled in-situ delivery of manganese ions enabling high-resolution MEMRI for synchronous neural tracing with deep brain stimulation.

    Science.gov (United States)

    Huang, Wei-Chen; Lo, Yu-Chih; Chu, Chao-Yi; Lai, Hsin-Yi; Chen, You-Yin; Chen, San-Yuan

    2017-04-01

    Chronic brain stimulation has become a promising physical therapy with increased efficacy and efficiency in the treatment of neurodegenerative diseases. The application of deep brain electrical stimulation (DBS) combined with manganese-enhanced magnetic resonance imaging (MEMRI) provides an unbiased representation of the functional anatomy, which shows the communication between areas of the brain responding to the therapy. However, it is challenging for the current system to provide a real-time high-resolution image because the incorporated MnCl 2 solution through microinjection usually results in image blurring or toxicity due to the uncontrollable diffusion of Mn 2+ . In this study, we developed a new type of conductive nanogel-based neural interface composed of amphiphilic chitosan-modified poly(3,4 -ethylenedioxythiophene) (PMSDT) that can exhibit biomimic structural/mechanical properties and ionic/electrical conductivity comparable to that of Au. More importantly, the PMSDT enables metal-ligand bonding with Mn 2+ ions, so that the system can release Mn 2+ ions rather than MnCl 2 solution directly and precisely controlled by electrical stimulation (ES) to achieve real-time high-resolution MEMRI. With the integration of PMSDT nanogel-based coating in polyimide-based microelectrode arrays, the post-implantation DBS enables frequency-dependent MR imaging in vivo, as well as small focal imaging in response to channel site-specific stimulation on the implant. The MR imaging of the implanted brain treated with 5-min electrical stimulation showed a thalamocortical neuronal pathway after 36 h, confirming the effective activation of a downstream neuronal circuit following DBS. By eliminating the susceptibility to artifact and toxicity, this system, in combination with a MR-compatible implant and a bio-compliant neural interface, provides a harmless and synchronic functional anatomy for DBS. The study demonstrates a model of MEMRI-functionalized DBS based on functional

  16. Positron transport studies at the Au - (InP:Fe) interface

    Science.gov (United States)

    Au, H. L.; Lee, T. C.; Beling, C. D.; Fung, S.

    1996-03-01

    Positron mobility and lifetime measurements have been carried out on semi-insulating Fe-doped InP samples with Au contacts used for electric field application. The lifetime measurements, with electric fields directed towards the Au - InP:Fe interface, reveal no component associated with interfacial open-volume sites and thus give no evidence of any positron mobility. The mobility measurements, made using the Doppler-shifted annihilation radiation technique, however, reveal a temperature independent positron mobility of about 0953-8984/8/10/012/img1 in the range 150 - 300 K. These observations, together with results from I - V analysis, are discussed with reference to two possible band-bending schemes. The first, which requires an ionized shallow donor region adjacent to the Au - InP interface, seems less plausible on a number of grounds. In the second, however, an 0953-8984/8/10/012/img2 negative space charge produces an adverse diffusion barrier for positrons approaching the interface together with a non-uniform electric field in the samples capable of explaining the observed mobility results.

  17. Interface interactions in benzophenone doped by multiwalled carbon nanotubes

    Science.gov (United States)

    Lebovka, N. I.; Goncharuk, A.; Melnyk, V. I.; Puchkovska, G. A.

    2009-08-01

    The interface interactions were studied by methods of conductometry, low-temperature phosphorescence and differential scanning calorimetry (DSC) in multiwalled carbon nanotubes (MWCNT) and benzophenone (BP) composite. The concentration of MWCNTs was varied within 0-1 wt%. A percolative threshold was found at MWCNT concentrations exceeding 0.1 wt%. The integration of MWCNTs caused melting temperature increase (≈3 K for 1 wt% of MWCNTs). The effect of positive thermal resistively coefficient, as well as substantial hysteretic behaviour of electrical conductivity σ in a heating-cooling cycle, was observed near the melting point of BP ( T m=321.5 K). The activation-type temperature behaviour of electrical conductivity was observed in the temperature range of supercooled BP. The activation energy was decreasing with increase of MWCNT concentration. The observed nonlinear dependencies of electrical conductivity σ vs. applied voltage U reflect the transport mechanism of the charge carriers through amorphous interface films formed near the surface of the MWCNTs. The thermal shifts of phosphorescence spectra measured within the temperature range 5-200 K evidence existence of such interface films of amorphous BP with width of the order of 0.1 μm.

  18. Decentralized and Modular Electrical Architecture

    Science.gov (United States)

    Elisabelar, Christian; Lebaratoux, Laurence

    2014-08-01

    This paper presents the studies made on the definition and design of a decentralized and modular electrical architecture that can be used for power distribution, active thermal control (ATC), standard inputs-outputs electrical interfaces.Traditionally implemented inside central unit like OBC or RTU, these interfaces can be dispatched in the satellite by using MicroRTU.CNES propose a similar approach of MicroRTU. The system is based on a bus called BRIO (Bus Réparti des IO), which is composed, by a power bus and a RS485 digital bus. BRIO architecture is made with several miniature terminals called BTCU (BRIO Terminal Control Unit) distributed in the spacecraft.The challenge was to design and develop the BTCU with very little volume, low consumption and low cost. The standard BTCU models are developed and qualified with a configuration dedicated to ATC, while the first flight model will fly on MICROSCOPE for PYRO actuations and analogue acquisitions. The design of the BTCU is made in order to be easily adaptable for all type of electric interface needs.Extension of this concept is envisaged for power conditioning and distribution unit, and a Modular PCDU based on BRIO concept is proposed.

  19. Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures

    Science.gov (United States)

    Sakamoto, Hironori; Takeuchi, Eito; Yoshida, Kouki; Morita, Ken; Ma, Bei; Ishitani, Yoshihiro

    2018-01-01

    Interface phonon polaritons (IPhPs) in nano-structures excluding metal components are thoroughly investigated because they have lower loss in optical emission or absorption and higher quality factors than surface plasmon polaritons. In previous reports, it is found that strong infrared (IR) absorption is based on the interaction of p-polarized light and materials, and the resonance photon energy highly depends on the structure size and angle of incidence. We report the optical absorption by metal/semiconductor (bulk-GaAs and thin film-AlN)-stripe structures in THz to mid-IR region for the electric field of light perpendicular to the stripes, where both of s- and p-polarized light are absorbed. The absorption resonates with longitudinal optical (LO) phonon or LO phonon-plasmon coupling (LOPC) modes, and thus is independent of the angle of incidence or structure size. This absorption is attributed to the electric dipoles by the optically induced polarization charges at the metal/semiconductor, heterointerfaces, or interfaces of high electron density layers and depression ones. The electric permittivity is modified by the formation of these dipoles. It is found to be indispensable to utilize our form of altered permittivity to explain the experimental dispersion relations of metal/semiconductor-IPhP and SPhP in these samples. This analysis reveals that the IPhPs in the stripe structures of metal/AlN-film on a SiC substrate are highly confined in the AlN film, while the permittivity of the structures of metal/bulk-GaAs is partially affected by the electric-dipoles. The quality factors of the electric-dipole absorption are found to be 42-54 for undoped samples, and the value of 62 is obtained for Al/AlN-IPhP. It is thought that metal-contained structures are not obstacles to mode energy selectivity in phonon energy region of semiconductors.

  20. Investigation of Interface Charges at the Heterojunction Discontinuity in HBT Devices

    DEFF Research Database (Denmark)

    Fuente, Jesús Grajal de al; Krozer, Viktor

    2002-01-01

    -doped layers are basic tools for interface engineering. An accurate modelling of heterointerfaces which includes thermionic-field emission, surface charges, and surface dipoles allows to analyse the electrical performance of some modern devices based on band gap and interface engineering. It is demonstrated...

  1. Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

    Science.gov (United States)

    Gruber, G.; Cottom, J.; Meszaros, R.; Koch, M.; Pobegen, G.; Aichinger, T.; Peters, D.; Hadley, P.

    2018-04-01

    SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.

  2. Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

    Science.gov (United States)

    Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

    2016-04-01

    The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

  3. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

    Energy Technology Data Exchange (ETDEWEB)

    Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

    2014-02-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

  4. Energy management system for power distribution. Interfaces and data communication requirements

    International Nuclear Information System (INIS)

    Koponen, P.; Lemstroem, B.; Ikonen, J.

    1995-01-01

    The opening of the electricity market for competition in Finland creates new requirements for the information systems and data communication in distribution utilities. Energy management systems for distribution utilities are needed with interfaces that make it possible to separate the network business from the energy trade business. However, these interfaces should also support optimization of the whole energy supply system of the country. In this report the interfaces and data communication requirements of the energy management system of the electricity trade business are analyzed. To support this subfunctions of the energy management have been analyzed. It was realized that the amount of necessary data transfer and optimization of the national power system both depend strongly on the general rules of the energy markets. (author)

  5. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    interfaces using molecular dynamics(MD) simulations and compared it with liquid state theory result. We explore the effects of high electrolyte concentrations, multivalent ions, and dielectric contrasts on the ionic distributions. We observe the presence of non-monotonous ionic density profiles leading to structure deformation in the fluid which is attributed to the competition between electrostatic and steric (entropic) interactions. We find that thermal forces that arise from symmetry breaking at the interfaces can have a profound effect on the ionic structure and can oftentimes overwhelm the influence of dielectric discontinuity. The combined effect of ionic correlations and inhomogeneous dielectric permittivity significantly changes the character of effective interaction between two interfaces. We show that, in concentrated electrolytes with confinement, it is imperative to take into account the finite-size of the ions as well as proper description of electrostatic interactions in heterogeneous media, which is not fully fulfilled by Poisson-Boltzmann based approaches. The effect of electric field at interface between two immiscible electrolyte solutions is studied as well. The classical Poisson-Boltzmann theory has been widely used to describe the corresponding ionic distribution, even though it neglects the polarization and ion correlations typical of these charged systems. Using Monte Carlo simulations, we provide an enhanced description of an oil-water interface in the presence of an electric field without needing any adjustable parameter, including realistic ionic sizes, ion correlations, and image charges. Our data agree with experimental measurements of excess surface tension for a wide range of electrolyte concentrations of LiCl and TBATPB (tetrabutylammonium-tetraphenylborate), contrasting with the result of the classical non-linear Poisson-Boltzmann theory. More importantly, we show that the size-asymmetry between small Li+ and large Cl- ions can significantly

  6. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Baldovino, Silvia; Fanciulli, Marco [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios [MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10 (Greece)

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  7. Nuclear power plants. Electrical equipment of the safety system. Qualification

    International Nuclear Information System (INIS)

    2001-01-01

    This International Standard applies to electrical parts of safety systems employed at nuclear power plants, including components and equipment of any interface whose failure could affect unfavourably properties of the safety system. The standard also applies to non-electrical safety-related interfaces. Furthermore, the standard describes the generic process of qualification certification procedures and methods of qualification testing and related documentation. (P.A.)

  8. Interface state generation after hole injection

    International Nuclear Information System (INIS)

    Zhao, C. Z.; Zhang, J. F.; Groeseneken, G.; Degraeve, R.; Ellis, J. N.; Beech, C. D.

    2001-01-01

    After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H 2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. [copyright] 2001 American Institute of Physics

  9. Solar electric power generation photovoltaic energy systems

    CERN Document Server

    Krauter, Stefan CW

    2007-01-01

    Solar electricity is a viable, environmentally sustainable alternative to the world's energy supplies. In support, this work examines the various technical parameters of photovoltaic systems. It analyzes the study of performance and yield (including optical, thermal, and electrical parameters and interfaces).

  10. Study of Electric Music Baton using Haptic Interface for Assistance of Visually Disabled Persons

    OpenAIRE

    浅川, 貴史

    2012-01-01

    [Abstract] We have made a proposal for a music baton system for visual disabled persons. The system is constituted by an acceleration sensor, a radio module, and a haptic interface device. When a conductor moves the baton, Players are able to acknowledge the action using the haptic interface device. We have carried out an experiment of comparing the visual and the haptic interface. The result declared that a pre-motion is important for the visual interface. In the paper, we make a proposal fo...

  11. Applying reliability analysis to design electric power systems for More-electric aircraft

    Science.gov (United States)

    Zhang, Baozhu

    The More-Electric Aircraft (MEA) is a type of aircraft that replaces conventional hydraulic and pneumatic systems with electrically powered components. These changes have significantly challenged the aircraft electric power system design. This thesis investigates how reliability analysis can be applied to automatically generate system topologies for the MEA electric power system. We first use a traditional method of reliability block diagrams to analyze the reliability level on different system topologies. We next propose a new methodology in which system topologies, constrained by a set reliability level, are automatically generated. The path-set method is used for analysis. Finally, we interface these sets of system topologies with control synthesis tools to automatically create correct-by-construction control logic for the electric power system.

  12. Interaction energy of interface dislocation loops in piezoelectric bi-crystals

    Directory of Open Access Journals (Sweden)

    Jianghong Yuan

    2017-03-01

    Full Text Available Interface dislocations may dramatically change the electric properties, such as polarization, of the piezoelectric crystals. In this paper, we study the linear interactions of two interface dislocation loops with arbitrary shape in generally anisotropic piezoelectric bi-crystals. A simple formula for calculating the interaction energy of the interface dislocation loops is derived and given by a double line integral along two closed dislocation curves. Particularly, interactions between two straight segments of the interface dislocations are solved analytically, which can be applied to approximate any curved loop so that an analytical solution can be also achieved. Numerical results show the influence of the bi-crystal interface as well as the material orientation on the interaction of interface dislocation loops.

  13. Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Roul, Basanta [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

    2015-03-15

    We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φ{sub b}) and the ideally factor (η) estimated using thermionic emission model were found to be temperature dependent. The conventional Richardson plot of ln(J{sub s}/T{sup 2}) versus 1/kT showed two temperature regions (region-I: 400–500 K and region-II: 200–350 K) and it provides Richardson constants (A{sup ∗}) which are much lower than the theoretical value of GaN. The observed variation in the barrier height and the presence of two temperature regions were attributed to spatial barrier inhomogeneities at the heterojunction interface and was explained by assuming a double Gaussian distribution of barrier heights with mean barrier height values 1.61 and 1.21 eV with standard deviation (σ{sub s}{sup 2}) of 0.044 and 0.022 V, respectively. The modified Richardson plot of ln(J{sub s}/T{sup 2}) − (q{sup 2}σ{sub s}{sup 2}/2k{sup 2}T{sup 2}) versus 1/kT for two temperature regions gave mean barrier height values as 1.61 eV and 1.22 eV with Richardson constants (A{sup ∗}) values 25.5 Acm{sup −2}K{sup −2} and 43.9 Acm{sup −2}K{sup −2}, respectively, which are very close to the theoretical value. The observed barrier height inhomogeneities were interpreted on the basis of the existence of a double Gaussian distribution of barrier heights at the interface.

  14. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  15. First-Principles Study of Enhanced Magnetoelectric Effects at the Fe/MgO(001) Interface

    Science.gov (United States)

    Niranjan, M. K.; Jaswal, S. S.; Tsymbal, E. Y.; Duan, C.-G.

    2010-03-01

    The magnetoelectric effect allows affecting magnetic properties of materials by electric fields with potential for technological applications such as electrically controlled magnetic data storage. In this study we explore, using first-principles methods, the magnetoelectric effect at the Fe/MgO(001) interface^,1. By explicitly introducing an electric field in our density-functional calculations we demonstrate that the magnetic moment of Fe atoms at the interface changes linearly as a function of the applied electric field with the surface magnetoelectric coefficient being strongly enhanced as compared to that for the clean Fe(001) surface.^1 The effect originates from the increased screening charge associated with a large dielectric constant of MgO. The influence of electric field on relative occupancy of the Fe-3d orbitals leads to significant change in the surface magnetocrystalline anisotropy. These results are compared with the available experimental work.^2 Our results indicate that using high-k dielectrics at the interface with ferromagnetic metals may be very effective in controlling the magnetic properties by electric fields thereby leading to interesting device applications. ^1 C.-G. Duan et al., Phys. Rev. Lett. 101, 137201 (2008). ^2 T. Maruyama et al., Nat. Nanotech., 4, 158 (2009).

  16. The effect of interfaces on solid-state reactions between oxides

    International Nuclear Information System (INIS)

    Johnson, M.T.; Carter, C.B.

    1998-01-01

    A thin-film geometry has been used to study fundamental solid-state reaction processes occurring at interfaces in two spinel-forming oxide systems. In the first system, NiO/Al 2 O 3 , epitactic NiO films were deposited on various orientations of single-crystal α-Al 2 O 3 . In this case, the reaction kinetics were studied and correlated with the interfacial structure (or substrate orientation). In the second, In 2 O 3 /MgO, solid-state reactions were studied under the influence of an electric field. The electric field provides a driving force for mass transport that affects both the reaction process and the morphological stability of an interface

  17. Simulation of Magnetic Phenomena at Realistic Interfaces

    KAUST Repository

    Grytsyuk, Sergiy

    2016-02-04

    In modern technology exciting developments are related to the ability to understand and control interfaces. Particularly, magnetic interfaces revealing spindependent electron transport are of great interest for modern spintronic devices, such as random access memories and logic devices. From the technological point of view, spintronic devices based on magnetic interfaces enable manipulation of the magnetism via an electric field. Such ability is a result of the different quantum effects arising from the magnetic interfaces (for example, spin transfer torque or spin-orbit torque) and it can reduce the energy consumption as compared to the traditional semiconductor electronic devices. Despite many appealing characteristics of these materials, fundamental understanding of their microscopic properties and related phenomena needs to be established by thorough investigation. In this work we implement first principles calculations in order to study the structural, electric, and magnetic properties as well as related phenomena of two types of interfaces with large potential in spintronic applications: 1) interfaces between antiferromagnetic 3d-metal-oxides and ferromagnetic 3d-metals and 2) interfaces between non-magnetic 5d(4d)- and ferromagnetic 3d-metals. A major difficulty in studying such interfaces theoretically is the typically large lattice mismatch. By employing supercells with Moir e patterns, we eliminate the artificial strain that leads to doubtful results and are able to describe the dependence of the atomic density at the interfaces on the component materials and their thicknesses. After establishing understanding about the interface structures, we investigate the electronic and magnetic properties. A Moir e supercell with transition layer is found to reproduce the main experimental findings and thus turns out to be the appropriate model for simulating magnetic misfit interfaces. In addition, we systematically study the magnetic anisotropy and Rashba band

  18. Propulsion Wheel Motor for an Electric Vehicle

    Science.gov (United States)

    Figuered, Joshua M. (Inventor); Herrera, Eduardo (Inventor); Waligora, Thomas M. (Inventor); Bluethmann, William J. (Inventor); Farrell, Logan Christopher (Inventor); Lee, Chunhao J. (Inventor); Vitale, Robert L. (Inventor); Winn, Ross Briant (Inventor); Eggleston, IV, Raymond Edward (Inventor); Guo, Raymond (Inventor); hide

    2016-01-01

    A wheel assembly for an electric vehicle includes a wheel rim that is concentrically disposed about a central axis. A propulsion-braking module is disposed within an interior region of the wheel rim. The propulsion-braking module rotatably supports the wheel rim for rotation about the central axis. The propulsion-braking module includes a liquid cooled electric motor having a rotor rotatable about the central axis, and a stator disposed radially inside the rotor relative to the central axis. A motor-wheel interface hub is fixedly attached to the wheel rim, and is directly attached to the rotor for rotation with the rotor. The motor-wheel interface hub directly transmits torque from the electric motor to the wheel rim at a 1:1 ratio. The propulsion-braking module includes a drum brake system having an electric motor that rotates a cam device, which actuates the brake shoes.

  19. Electric-field-controlled interface dipole modulation for Si-based memory devices.

    Science.gov (United States)

    Miyata, Noriyuki

    2018-05-31

    Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

  20. Acousto-electrical speckle pattern in Lorentz force electrical impedance tomography

    International Nuclear Information System (INIS)

    Grasland-Mongrain, Pol; Destrempes, François; Cloutier, Guy; Mari, Jean-Martial; Souchon, Rémi; Catheline, Stefan; Chapelon, Jean-Yves; Lafon, Cyril

    2015-01-01

    Ultrasound speckle is a granular texture pattern appearing in ultrasound imaging. It can be used to distinguish tissues and identify pathologies. Lorentz force electrical impedance tomography is an ultrasound-based medical imaging technique of the tissue electrical conductivity. It is based on the application of an ultrasound wave in a medium placed in a magnetic field and on the measurement of the induced electric current due to Lorentz force. Similarly to ultrasound imaging, we hypothesized that a speckle could be observed with Lorentz force electrical impedance tomography imaging. In this study, we first assessed the theoretical similarity between the measured signals in Lorentz force electrical impedance tomography and in ultrasound imaging modalities. We then compared experimentally the signal measured in both methods using an acoustic and electrical impedance interface. Finally, a bovine muscle sample was imaged using the two methods. Similar speckle patterns were observed. This indicates the existence of an ‘acousto-electrical speckle’ in the Lorentz force electrical impedance tomography with spatial characteristics driven by the acoustic parameters but due to electrical impedance inhomogeneities instead of acoustic ones as is the case of ultrasound imaging. (paper)

  1. Acousto-electrical speckle pattern in Lorentz force electrical impedance tomography

    Science.gov (United States)

    Grasland-Mongrain, Pol; Destrempes, François; Mari, Jean-Martial; Souchon, Rémi; Catheline, Stefan; Chapelon, Jean-Yves; Lafon, Cyril; Cloutier, Guy

    2015-05-01

    Ultrasound speckle is a granular texture pattern appearing in ultrasound imaging. It can be used to distinguish tissues and identify pathologies. Lorentz force electrical impedance tomography is an ultrasound-based medical imaging technique of the tissue electrical conductivity. It is based on the application of an ultrasound wave in a medium placed in a magnetic field and on the measurement of the induced electric current due to Lorentz force. Similarly to ultrasound imaging, we hypothesized that a speckle could be observed with Lorentz force electrical impedance tomography imaging. In this study, we first assessed the theoretical similarity between the measured signals in Lorentz force electrical impedance tomography and in ultrasound imaging modalities. We then compared experimentally the signal measured in both methods using an acoustic and electrical impedance interface. Finally, a bovine muscle sample was imaged using the two methods. Similar speckle patterns were observed. This indicates the existence of an ‘acousto-electrical speckle’ in the Lorentz force electrical impedance tomography with spatial characteristics driven by the acoustic parameters but due to electrical impedance inhomogeneities instead of acoustic ones as is the case of ultrasound imaging.

  2. Silicon/HfO2 interface: Effects of proton irradiation

    International Nuclear Information System (INIS)

    Maurya, Savita; Radhakrishna, M.

    2015-01-01

    Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

  3. Interfacing of DNA with carbon nanotubes for nanodevice applications

    International Nuclear Information System (INIS)

    Rastogi, Richa; Dhindsa, Navneet; Suri, C. Raman; Pant, B.D.; Tripathi, S.K.; Kaur, Inderpreet; Bharadwaj, Lalit M.

    2012-01-01

    In nanotechnology, carbon nanotubes are evolving as ‘hot spot’ due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT–DNA adduct showed decreased transconductance (from 614.46 μS to 1.34 μS) and shift of threshold voltage (from −0.85 V to 2.5 V) due to change in Schottky barriers at metal–nanotube contact. In addition, decrease in hole mobility (from 4.46 × 10 6 to 9.72 × 10 3 cm 2 V −1 s −1 ) and increase in ON-linear resistance (from 74 kΩ to 0.44 MΩ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT–DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. Highlights: ► Effect of biomolecular (DNA) interaction on electrical

  4. Electrophoretic transport of biomolecules across liquid-liquid interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hahn, Thomas; Hardt, Steffen [Center of Smart Interfaces, TU Darmstadt, Petersenstrasse 32, D-64287 Darmstadt (Germany); Muenchow, Goetz, E-mail: hardt@csi.tu-darmstadt.de [Institut fuer Mikrotechnik Mainz GmbH, Carl-Zeiss-Strasse 18-20, D-55129 Mainz (Germany)

    2011-05-11

    The mass transfer resistance of a liquid-liquid interface in an aqueous two-phase system composed of poly(ethylene glycol) and dextran is investigated. Different types of proteins and DNA stained with fluorescent dyes serve as probes to study the transport processes close to the interface. A microfluidic device is employed to enable the electrophoretic transport of biomolecules from one phase to another. The results obtained for proteins can be explained solely via the different electrophoretic mobilities and different affinities of the molecules to the two phases, without any indications of a significant mass transfer resistance of the liquid-liquid interface. By contrast, DNA molecules adsorb to the interface and only desorb under an increased electric field strength. The desorption process carries the signature of a thermally activated escape from a metastable state, as reflected in the exponential decay of the fluorescence intensity at the interface as a function of time.

  5. Incorporation of in-plane interconnects to reflow bonding for electrical functionality

    International Nuclear Information System (INIS)

    Moğulkoç, B; Jansen, H V; Ter Brake, H J M; Elwenspoek, M C

    2011-01-01

    Incorporation of in-plane electrical interconnects to reflow bonding is studied to provide electrical functionality to lab-on-a-chip or microfluidic devices. Reflow bonding is the packaging technology, in which glass tubes are joined to silicon substrates at elevated temperatures. The tubes are used to interface the silicon-based fluidic devices and are directly compatible with standard Swagelok® connectors. After the bonding, the electrically conductive lines will allow probing into the volume confined by the tube, where the fluidic device operates. Therefore methods for fabricating electrical interconnects that survive the bonding procedure at elevated temperature and do not alter the properties of the bond interface are investigated

  6. High thermal stability of abrupt SiO2/GaN interface with low interface state density

    Science.gov (United States)

    Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-04-01

    The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

  7. Near infrared spectroscopy based brain-computer interface

    Science.gov (United States)

    Ranganatha, Sitaram; Hoshi, Yoko; Guan, Cuntai

    2005-04-01

    A brain-computer interface (BCI) provides users with an alternative output channel other than the normal output path of the brain. BCI is being given much attention recently as an alternate mode of communication and control for the disabled, such as patients suffering from Amyotrophic Lateral Sclerosis (ALS) or "locked-in". BCI may also find applications in military, education and entertainment. Most of the existing BCI systems which rely on the brain's electrical activity use scalp EEG signals. The scalp EEG is an inherently noisy and non-linear signal. The signal is detrimentally affected by various artifacts such as the EOG, EMG, ECG and so forth. EEG is cumbersome to use in practice, because of the need for applying conductive gel, and the need for the subject to be immobile. There is an urgent need for a more accessible interface that uses a more direct measure of cognitive function to control an output device. The optical response of Near Infrared Spectroscopy (NIRS) denoting brain activation can be used as an alternative to electrical signals, with the intention of developing a more practical and user-friendly BCI. In this paper, a new method of brain-computer interface (BCI) based on NIRS is proposed. Preliminary results of our experiments towards developing this system are reported.

  8. Sheathless interface for coupling capillary electrophoresis with mass spectrometry

    Science.gov (United States)

    Wang, Chenchen; Tang, Keqi; Smith, Richard D.

    2014-06-17

    A sheathless interface for coupling capillary electrophoresis (CE) with mass spectrometry is disclosed. The sheathless interface includes a separation capillary for performing CE separation and an emitter capillary for electrospray ionization. A portion of the emitter capillary is porous or, alternatively, is coated to form an electrically conductive surface. A section of the emitter capillary is disposed within the separation capillary, forming a joint. A metal tube, containing a conductive liquid, encloses the joint.

  9. Understanding voltage-induced localization of nanoparticles at a liquid-liquid interface

    International Nuclear Information System (INIS)

    Flatte, M E; Kornyshev, A A; Urbakh, M

    2008-01-01

    Functionalization of liquid-liquid interfaces is a hot area, driven by aspirations to build self-assembled interfacial structures with unique properties, in particular accessible to light from both sides of the interface. Adsorption of nanoparticles is an example of such functionalization. Interesting new developments take place in electrochemical liquid-liquid systems, consisting of two immiscible electrolytic solutions that form an interface impermeable to ions until a sufficiently high voltage is applied across the interface. The voltage drops across a nanoscale region near the interface due to the formation of two back-to-back electrical double layers on the two sides of the interface. This highly localized voltage drop opens a new possibility for the stabilization and control of interfacial architectures. This appears to be particularly important for metal and even semiconductor nanoparticles, because they are, in turn, 'functionalized'. They are covered by surfactants with acidic groups, some of which dissociate in water. Coverage with surfactants is required to avoid particle-particle agglomeration in the bulk. An electric field can push such nanoparticles to the interface or move them away, depending on the direction of the field. This, together with the change of the free energy of solvation of nanoparticles when they move from the bulk to the surface, are the two new decisive factors affecting their adsorption and desorption. We discuss these effects together with the more familiar ones that are known to determine interfacial localization of uncharged nanoparticles. The presented critical analysis is qualitative. Although we will try to rationalize the main effects by some simplified formulae, they should not be taken literally: they pave the way towards understanding of nanoparticle localization in these systems, rather than give exact answers. These equations will, however, help us to 'visualize' how a properly applied electric field, assisted by the

  10. Electrode-electrolyte interface model of tripolar concentric ring electrode and electrode paste.

    Science.gov (United States)

    Nasrollaholhosseini, Seyed Hadi; Steele, Preston; Besio, Walter G

    2016-08-01

    Electrodes are used to transform ionic currents to electrical currents in biological systems. Modeling the electrode-electrolyte interface could help to optimize the performance of the electrode interface to achieve higher signal to noise ratios. There are previous reports of accurate models for single-element biomedical electrodes. In this paper we develop a model for the electrode-electrolyte interface for tripolar concentric ring electrodes (TCRE) that are used to record brain signals.

  11. Electrical manipulation of oligonucleotides grafted to charged surfaces.

    Science.gov (United States)

    Rant, Ulrich; Arinaga, Kenji; Fujita, Shozo; Yokoyama, Naoki; Abstreiter, Gerhard; Tornow, Marc

    2006-09-21

    The electrical manipulation of short DNA molecules on surfaces offers novel functionalities with fascinating possibilities in the field of bio-interfaces. Here we present systematic investigations of the electrical interactions which govern the structure of oligonucleotides on charged gold surfaces. Successively, we address influences of the applied field strength, the role of DC electrode potentials, in particular for polycrystalline surfaces, as well as screening effects of the surrounding electrolyte solution. Data obtained for single and double stranded DNA exhibit differences which can be attributed to the dissimilar flexibility of the different molecular conformations. A comparison of the experimental results with a basic model shows how the alignment of the molecules adjusts according to a balance between electrically induced ordering and stochastic thermal motions. The presented conclusions are expected to be of general relevance for the behaviour of polyelectrolytes exposed to localized electric fields at interfaces.

  12. Electrocapillary Phenomena at Edible Oil/Saline Interfaces.

    Science.gov (United States)

    Nishimura, Satoshi; Ohzono, Takuya; Shoji, Kohei; Yagihara, Shin; Hayashi, Masafumi; Tanaka, Hisao

    2017-03-01

    Interfacial tension between edible oil and saline was measured under applied electric fields to understand the electrocapillary phenomena at the edible oil/saline interfaces. The electric responses of saline droplets in edible oil were also observed microscopically to examine the relationship between the electrocapillary phenomena and interfacial polarization. When sodium oleate (SO) was added to edible oil (SO-oil), the interfacial tension between SO-oil and saline decreased. However, no decrease was observed for additive-free oil or oleic acid (OA)-added oil (OA-oil). Microscopic observations suggested that the magnitude of interfacial polarization increased in the order of additive-free oil oil oil. The difference in electrocapillary phenomena between OA- and SO-oils was closely related to the polarization magnitude. In the case of SO-oil, the decrease in interfacial tension was remarkably larger for saline (pH 5.4~5.6) than that for phosphate-buffered saline (PBS, pH 7.2~7.4). However, no difference was observed between the electric responses of PBS and saline droplets in SO-oil. The difference in electrocapillary phenomena for PBS and saline could not be simply explained in terms of polarization magnitude. The ratio of ionized and non-ionized OA at the interfaces changed with the saline pH, possibly leading to the above difference.

  13. Modeling Auditory-Haptic Interface Cues from an Analog Multi-line Telephone

    Science.gov (United States)

    Begault, Durand R.; Anderson, Mark R.; Bittner, Rachael M.

    2012-01-01

    The Western Electric Company produced a multi-line telephone during the 1940s-1970s using a six-button interface design that provided robust tactile, haptic and auditory cues regarding the "state" of the communication system. This multi-line telephone was used as a model for a trade study comparison of two interfaces: a touchscreen interface (iPad)) versus a pressure-sensitive strain gauge button interface (Phidget USB interface controllers). The experiment and its results are detailed in the authors' AES 133rd convention paper " Multimodal Information Management: Evaluation of Auditory and Haptic Cues for NextGen Communication Dispays". This Engineering Brief describes how the interface logic, visual indications, and auditory cues of the original telephone were synthesized using MAX/MSP, including the logic for line selection, line hold, and priority line activation.

  14. Improvement of the electrical contact resistance at rough interfaces using two dimensional materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Jianchen; Pan, Chengbin; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Li, Heng [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China); Shen, Panpan; Sun, Hui; Duan, Huiling [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering, Peking University, Beijing 100871 (China)

    2015-12-07

    Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.

  15. Assessing the Electrode-Neuron Interface with the Electrically Evoked Compound Action Potential, Electrode Position, and Behavioral Thresholds.

    Science.gov (United States)

    DeVries, Lindsay; Scheperle, Rachel; Bierer, Julie Arenberg

    2016-06-01

    Variability in speech perception scores among cochlear implant listeners may largely reflect the variable efficacy of implant electrodes to convey stimulus information to the auditory nerve. In the present study, three metrics were applied to assess the quality of the electrode-neuron interface of individual cochlear implant channels: the electrically evoked compound action potential (ECAP), the estimation of electrode position using computerized tomography (CT), and behavioral thresholds using focused stimulation. The primary motivation of this approach is to evaluate the ECAP as a site-specific measure of the electrode-neuron interface in the context of two peripheral factors that likely contribute to degraded perception: large electrode-to-modiolus distance and reduced neural density. Ten unilaterally implanted adults with Advanced Bionics HiRes90k devices participated. ECAPs were elicited with monopolar stimulation within a forward-masking paradigm to construct channel interaction functions (CIF), behavioral thresholds were obtained with quadrupolar (sQP) stimulation, and data from imaging provided estimates of electrode-to-modiolus distance and scalar location (scala tympani (ST), intermediate, or scala vestibuli (SV)) for each electrode. The width of the ECAP CIF was positively correlated with electrode-to-modiolus distance; both of these measures were also influenced by scalar position. The ECAP peak amplitude was negatively correlated with behavioral thresholds. Moreover, subjects with low behavioral thresholds and large ECAP amplitudes, averaged across electrodes, tended to have higher speech perception scores. These results suggest a potential clinical role for the ECAP in the objective assessment of individual cochlear implant channels, with the potential to improve speech perception outcomes.

  16. The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

    Science.gov (United States)

    Zhao, De-Wei; Xu, Zheng; Zhang, Fu-Jun; Song, Shu-Fang; Zhao, Su-Ling; Wang, Yong; Yuan, Guang-Cai; Zhang, Yan-Fei; Xu, Hong-Hua

    2007-02-01

    Organic light-emitting diode (OLED) based on two kinds of blue emission materials N, N'-bis(1-naphthyl)- N, N'-diphenyl-l,l'-diphenyl-4,4'-diamine (NPB) and 2-(4-biphenylyl)-5(4- tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.

  17. Driving spin transition at interface: Role of adsorption configurations

    Science.gov (United States)

    Zhang, Yachao

    2018-01-01

    A clear insight into the electrical manipulation of molecular spins at interface is crucial to the design of molecule-based spintronic devices. Here we report on the electrically driven spin transition in manganocene physisorbed on a metallic surface in two different adsorption configurations predicted by ab initio techniques, including a Hubbard-U correction at the manganese site and accounting for the long-range van der Waals interactions. We show that the application of an electric field at the interface induces a high-spin to low-spin transition in the flat-lying manganocene, while it could hardly alter the high-spin ground state of the standing-up molecule. This phenomenon cannot be explained by either the molecule-metal charge transfer or the local electron correlation effects. We demonstrate a linear dependence of the intra-molecular spin-state splitting on the energy difference between crystal-field splitting and on-site Coulomb repulsion. After considering the molecule-surface binding energy shifts upon spin transition, we reproduce the obtained spin-state energetics. We find that the configuration-dependent responses of the spin-transition originate from the binding energy shifts instead of the variation of the local ligand field. Through these analyses, we obtain an intuitive understanding of the effects of molecule-surface contact on spin-crossover under electrical bias.

  18. Final Report: MaRSPlus Sensor System Electrical Cable Management and Distributed Motor Control Computer Interface

    Science.gov (United States)

    Reil, Robin

    2011-01-01

    The success of JPL's Next Generation Imaging Spectrometer (NGIS) in Earth remote sensing has inspired a follow-on instrument project, the MaRSPlus Sensor System (MSS). One of JPL's responsibilities in the MSS project involves updating the documentation from the previous JPL airborne imagers to provide all the information necessary for an outside customer to operate the instrument independently. As part of this documentation update, I created detailed electrical cabling diagrams to provide JPL technicians with clear and concise build instructions and a database to track the status of cables from order to build to delivery. Simultaneously, a distributed motor control system is being developed for potential use on the proposed 2018 Mars rover mission. This system would significantly reduce the mass necessary for rover motor control, making more mass space available to other important spacecraft systems. The current stage of the project consists of a desktop computer talking to a single "cold box" unit containing the electronics to drive a motor. In order to test the electronics, I developed a graphical user interface (GUI) using MATLAB to allow a user to send simple commands to the cold box and display the responses received in a user-friendly format.

  19. Interfacing of DNA with carbon nanotubes for nanodevice applications

    Energy Technology Data Exchange (ETDEWEB)

    Rastogi, Richa, E-mail: richa.bend@gmail.com [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Dhindsa, Navneet [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Suri, C. Raman [Biosensor Division, Institute of Microbial Technology (IMTECH), Sector-39, Chandigarh 160039 (India); Pant, B.D. [Central Electronics Engineering Research Institute, Pilani, Rajasthan (India); Tripathi, S.K. [Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Kaur, Inderpreet; Bharadwaj, Lalit M. [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India)

    2012-08-15

    In nanotechnology, carbon nanotubes are evolving as 'hot spot' due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT-DNA adduct showed decreased transconductance (from 614.46 {mu}S to 1.34 {mu}S) and shift of threshold voltage (from -0.85 V to 2.5 V) due to change in Schottky barriers at metal-nanotube contact. In addition, decrease in hole mobility (from 4.46 Multiplication-Sign 10{sup 6} to 9.72 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1}) and increase in ON-linear resistance (from 74 k Ohm-Sign to 0.44 M Ohm-Sign ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT-DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential

  20. Combined use of frequency‐domain electromagnetic and electrical resistivity surveys to delineate the freshwater/saltwater interface near saline lakes in the Nebraska Sand Hills, Nebraska, USA

    Science.gov (United States)

    Ong, John T.; White, Eric A.; Lane, John W.; Halihan, Todd; Zlotnik, Vitaly A; Butler, Dwain K.

    2009-01-01

    We investigate the use of frequency‐domain electromagnetic (FDEM) and electrical resistivity (ER) surveys for rapid and detailed characterization of the direction of lake‐aquifer fluxes and the configuration of salt plumes generated from saline lakes. This methodology was developed and applied at several lakes in the Nebraska Sand Hills, Nebraska, in an area with both freshwater and saline lakes hydraulically connected to the freshwater surficial aquifer. The FDEM survey was conducted by mounting the instrument on a fiberglass cart towed by an all‐terrain vehicle. The towed FDEM surveys covered about 25 km per day and served as a reconnaissance method for choosing locations for the more quantitative and detailed ER surveys. Around the saline lakes, areas with high electrical conductivity are consistent with the regional direction of ground‐water flow. Lower electrical conductivity was measured around the freshwater lakes with anomalies correlating to a paleovalley axis inferred from previous studies. The efficacy of this geophysical approach is attributed to: (1) significant contrast in electrical conductivity between freshwater and saltwater, (2) near‐surface location of the freshwater/saltwater interface, (3) minimal cultural interference, and (4) relative homogeneity of the aquifer materials.

  1. Command Interface ASIC - Analog Interface ASIC Chip Set

    Science.gov (United States)

    Ruiz, Baldes; Jaffe, Burton; Burke, Gary; Lung, Gerald; Pixler, Gregory; Plummer, Joe; Katanyoutanant,, Sunant; Whitaker, William

    2003-01-01

    A command interface application-specific integrated circuit (ASIC) and an analog interface ASIC have been developed as a chip set for remote actuation and monitoring of a collection of switches, which can be used to control generic loads, pyrotechnic devices, and valves in a high-radiation environment. The command interface ASIC (CIA) can be used alone or in combination with the analog interface ASIC (AIA). Designed primarily for incorporation into spacecraft control systems, they are also suitable for use in high-radiation terrestrial environments (e.g., in nuclear power plants and facilities that process radioactive materials). The primary role of the CIA within a spacecraft or other power system is to provide a reconfigurable means of regulating the power bus, actuating all valves, firing all pyrotechnic devices, and controlling the switching of power to all switchable loads. The CIA is a mixed-signal (analog and digital) ASIC that includes an embedded microcontroller with supporting fault-tolerant switch control and monitoring circuitry that is capable of connecting to a redundant set of interintegrated circuit (I(sup 2)C) buses. Commands and telemetry requests are communicated to the CIA. Adherence to the I(sup 2)C bus standard helps to reduce development costs by facilitating the use of previously developed, commercially available components. The AIA is a mixed-signal ASIC that includes the analog circuitry needed to connect the CIA to a custom higher powered version of the I(sup 2)C bus. The higher-powered version is designed to enable operation with bus cables longer than those contemplated in the I(sup 2)C standard. If there are multiple higher-power I(sup 2)C-like buses, then there must an AIA between the CIA and each such bus. The AIA includes two identical interface blocks: one for the side-A I(sup 2)C clock and data buses and the other for the side B buses. All the AIAs on each side are powered from a common power converter module (PCM). Sides A and B

  2. Photovoltaic array: Power conditioner interface characteristics

    Science.gov (United States)

    Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

    1982-01-01

    The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

  3. Finite Bias Calculations to Model Interface Dipoles in Electrochemical Cells at the Atomic Scale

    DEFF Research Database (Denmark)

    Hansen, Martin Hangaard; Jin, Chengjun; Thygesen, Kristian Sommer

    2016-01-01

    The structure of an electrochemical interface is not determined by any external electrostatic field, but rather by external chemical potentials. This paper demonstrates that the electric double layer should be understood fundamentally as an internal electric field set up by the atomic structure...

  4. A Brain–Spinal Interface Alleviating Gait Deficits after Spinal Cord Injury in Primates

    Science.gov (United States)

    Capogrosso, Marco; Milekovic, Tomislav; Borton, David; Wagner, Fabien; Moraud, Eduardo Martin; Mignardot, Jean-Baptiste; Buse, Nicolas; Gandar, Jerome; Barraud, Quentin; Xing, David; Rey, Elodie; Duis, Simone; Jianzhong, Yang; Ko, Wai Kin D.; Li, Qin; Detemple, Peter; Denison, Tim; Micera, Silvestro; Bezard, Erwan; Bloch, Jocelyne; Courtine, Grégoire

    2016-01-01

    Spinal cord injury disrupts the communication between the brain and the spinal circuits that orchestrate movement. To bypass the lesion, brain–computer interfaces1–3 have directly linked cortical activity to electrical stimulation of muscles, which have restored grasping abilities after hand paralysis1,4. Theoretically, this strategy could also restore control over leg muscle activity for walking5. However, replicating the complex sequence of individual muscle activation patterns underlying natural and adaptive locomotor movements poses formidable conceptual and technological challenges6,7. Recently, we showed in rats that epidural electrical stimulation of the lumbar spinal cord can reproduce the natural activation of synergistic muscle groups producing locomotion8–10. Here, we interfaced leg motor cortex activity with epidural electrical stimulation protocols to establish a brain–spinal interface that alleviated gait deficits after a spinal cord injury in nonhuman primates. Rhesus monkeys were implanted with an intracortical microelectrode array into the leg area of motor cortex; and a spinal cord stimulation system composed of a spatially selective epidural implant and a pulse generator with real-time triggering capabilities. We designed and implemented wireless control systems that linked online neural decoding of extension and flexion motor states with stimulation protocols promoting these movements. These systems allowed the monkeys to behave freely without any restrictions or constraining tethered electronics. After validation of the brain–spinal interface in intact monkeys, we performed a unilateral corticospinal tract lesion at the thoracic level. As early as six days post-injury and without prior training of the monkeys, the brain–spinal interface restored weight-bearing locomotion of the paralyzed leg on a treadmill and overground. The implantable components integrated in the brain–spinal interface have all been approved for investigational

  5. Crystal growth under external electric fields

    International Nuclear Information System (INIS)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo

    2014-01-01

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal

  6. Crystal growth under external electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2014-10-06

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal.

  7. Potential-specific structure at the hematite-electrolyte interface

    Energy Technology Data Exchange (ETDEWEB)

    McBriarty, Martin E.; Stubbs, Joanne; Eng, Peter; Rosso, Kevin M.

    2018-02-21

    The atomic-scale structure of interfaces between metal oxides and aqueous electrolytes controls their catalytic, geochemical, and corrosion behavior. Measurements that probe these interfaces in situ provide important details of ion and solvent arrangements, but atomically precise structural models do not exist for common oxide-electrolyte interfaces far from equilibrium. Using a novel cell, we measured the structure of the hematite (a-Fe2O3) (110$\\bar{2}$)-electrolyte interface under controlled electrochemical bias using synchrotron crystal truncation rod X ray scattering. At increasingly cathodic potentials, charge-compensating protonation of surface oxygen groups increases the coverage of specifically bound water while adjacent water layers displace outwardly and became disordered. Returning to open circuit potential leaves the surface in a persistent metastable protonation state. The flux of current and ions at applied potential is thus regulated by a unique interfacial electrolyte environment, suggesting that electrical double layer models should be adapted to the dynamically changing interfacial structure far from equilibrium.

  8. Charge losses in silicon sensors and electric-field studies at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Poehlsen, Thomas

    2013-07-01

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few μm below the surface and very close to the surface, respectively. Segmented p + n silicon strip sensors are used to study the electric field below the SiO 2 separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO 2 interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO 2 interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be added to the

  9. Interface properties of superlattices with artificially broken symmetry

    International Nuclear Information System (INIS)

    Lottermoser, Th.; Yamada, H.; Matsuno, J.; Arima, T.; Kawasaki, M.; Tokura, Y.

    2007-01-01

    We have used superlattices made of thin layers of transition metal oxides to design the so-called multiferroics, i.e. materials possessing simultaneously an electric polarization and a magnetic ordering. The polarization originates from the asymmetric stacking order accompanied by charge transfer effects, while the latter one also influences the magnetic properties of the interfaces. Due to the breaking of space and time-reversal symmetry by multiple ordering mechanism magnetic second harmonic generation is proven to be an ideal method to investigate the electric and magnetic properties of the superlattices

  10. One-dimensional pressure transfer models for acoustic-electric transmission channels

    Science.gov (United States)

    Wilt, K. R.; Lawry, T. J.; Scarton, H. A.; Saulnier, G. J.

    2015-09-01

    A method for modeling piezoelectric-based ultrasonic acoustic-electric power and data transmission channels is presented. These channels employ piezoelectric disk transducers to convey signals across a series of physical layers using ultrasonic waves. This model decomposes the mechanical pathway of the signal into individual ultrasonic propagation layers which are generally independent of the layer's adjacent domains. Each layer is represented by a two-by-two traveling pressure wave transfer matrix which relates the forward and reverse pressure waves on one side of the layer to the pressure waves on the opposite face, where each face is assumed to be in contact with a domain of arbitrary reference acoustic impedance. A rigorous implementation of ultrasonic beam spreading is introduced and implemented within applicable domains. Compatible pressure-wave models for piezoelectric transducers are given, which relate the electric voltage and current interface of the transducer to the pressure waves on one mechanical interface while also allowing for passive acoustic loading of the secondary mechanical interface. It is also shown that the piezoelectric model's electrical interface is compatible with transmission line parameters (ABCD-parameters), allowing for connection of electronic components and networks. The model is shown to be capable of reproducing the behavior of realistic physical channels.

  11. Energy Management Systems to Reduce Electrical Energy Consumption

    OpenAIRE

    Oriti, Giovanna

    2015-01-01

    EXECUTIVE SUMMARY An energy management system comprises an electrical energy storage element such as a battery, renewable electrical energy sources such as solar and wind, a digital signal processing controller and a solid state power converter to interface the elements together. This hardware demonstration in the lab at the Naval Postgraduate School will focus on solid state power conversion methods to improve the reliability and efficiency of electrical energy consumption by Navy facilit...

  12. Small-angle light scattering symmetry breaking in polymer-dispersed liquid crystal films with inhomogeneous electrically controlled interface anchoring

    Energy Technology Data Exchange (ETDEWEB)

    Loiko, V. A., E-mail: loiko@ifanbel.bas-net.by; Konkolovich, A. V. [National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus); Zyryanov, V. Ya. [Russian Academy of Sciences, Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center,” Siberian Branch (Russian Federation); Miskevich, A. A. [National Academy of Sciences of Belarus, Stepanov Institute of Physics (Belarus)

    2017-03-15

    We have described the method of analyzing and reporting on the results of calculation of the small-angle structure of radiation scattered by a polymer-dispersed liquid crystal film with electrically controlled interfacial anchoring. The method is based on the interference approximation of the wave scattering theory and the hard disk model. Scattering from an individual liquid crystal droplet has been described using the anomalous diffraction approximation extended to the case of droplets with uniform and nonuniform interface anchoring at the droplet–polymer boundary. The director field structure in an individual droplet is determined from the solution of the problem of minimizing the volume density of the free energy. The electrooptical effect of symmetry breaking in the angular distribution of scattered radiation has been analyzed. This effect means that the intensities of radiation scattered within angles +θ{sub s} and–θ{sub s} relative to the direction of illumination in the scattering plane can be different. The effect is of the interference origin and is associated with asymmetry of the phase shift of the wavefront of an incident wave from individual parts of the droplet, which appears due to asymmetry of the director field structure in the droplet, caused by nonuniform anchoring of liquid crystal molecules with the polymer on its surface. This effect is analyzed in the case of normal illumination of the film depending on the interfacial anchoring at the liquid crystal–polymer interface, the orientation of the optical axes of droplets, their concentration, sizes, anisometry, and polydispersity.

  13. Electrical contacts principles and applications

    CERN Document Server

    Slade, Paul G

    2013-01-01

    Covering the theory, application, and testing of contact materials, Electrical Contacts: Principles and Applications, Second Edition introduces a thorough discussion on making electric contact and contact interface conduction; presents a general outline of, and measurement techniques for, important corrosion mechanisms; considers the results of contact wear when plug-in connections are made and broken; investigates the effect of thin noble metal plating on electronic connections; and relates crucial considerations for making high- and low-power contact joints. It examines contact use in switch

  14. OTFT with pentacene-gate dielectric interface modified by silicon nanoparticles

    International Nuclear Information System (INIS)

    Jakabovic, J.; Kovac, J.; Srnanek, R.; Guldan, S.; Donoval, D.; Weis, M.; Sokolsky, M.; Cirak, J.; Broch, K.; Schreiber, F.

    2011-01-01

    We have for the first time investigated the structural and electrical properties of pentacene OTFT deposited on the semiconductor-gate insulator interface covered with SiNPs monolayer prepared by the LB method and compared these to a reference sample (without SiNPs). The micro-Raman, AFM and XRD measurements confirmed that the pentacene layer deposited on the semiconductor-gate insulator interface covered with a SiNPs monolayer on both hydrophobic and hydrophilic surfaces changes the structure. The Raman measurements show that the average value of α is between 0.8 and 1.0. The different structural quality of pentacene leads to better OTFTs electrical characteristics mainly saturation current of OTFTs with SiNPs increasing (∼ 2.5 x) with storing time (85 days) in comparison to OTFTs without SiNPs, which decrease similarly after 85 days.

  15. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  16. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  17. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  18. Field enhancement at metallic interfaces due to quantum confinement

    DEFF Research Database (Denmark)

    Öztürk, Fatih; Xiao, Sanshui; Yan, Min

    2011-01-01

    We point out an apparently overlooked consequence of the boundary conditions obeyed by the electric displacement vector at air-metal interfaces: the continuity of the normal component combined with the quantum mechanical penetration of the electron gas in the air implies the existence of a surfac...

  19. Brain-Computer Interface Controlled Functional Electrical Stimulation System for Ankle Movement

    Directory of Open Access Journals (Sweden)

    King Christine E

    2011-08-01

    Full Text Available Abstract Background Many neurological conditions, such as stroke, spinal cord injury, and traumatic brain injury, can cause chronic gait function impairment due to foot-drop. Current physiotherapy techniques provide only a limited degree of motor function recovery in these individuals, and therefore novel therapies are needed. Brain-computer interface (BCI is a relatively novel technology with a potential to restore, substitute, or augment lost motor behaviors in patients with neurological injuries. Here, we describe the first successful integration of a noninvasive electroencephalogram (EEG-based BCI with a noninvasive functional electrical stimulation (FES system that enables the direct brain control of foot dorsiflexion in able-bodied individuals. Methods A noninvasive EEG-based BCI system was integrated with a noninvasive FES system for foot dorsiflexion. Subjects underwent computer-cued epochs of repetitive foot dorsiflexion and idling while their EEG signals were recorded and stored for offline analysis. The analysis generated a prediction model that allowed EEG data to be analyzed and classified in real time during online BCI operation. The real-time online performance of the integrated BCI-FES system was tested in a group of five able-bodied subjects who used repetitive foot dorsiflexion to elicit BCI-FES mediated dorsiflexion of the contralateral foot. Results Five able-bodied subjects performed 10 alternations of idling and repetitive foot dorsifiexion to trigger BCI-FES mediated dorsifiexion of the contralateral foot. The epochs of BCI-FES mediated foot dorsifiexion were highly correlated with the epochs of voluntary foot dorsifiexion (correlation coefficient ranged between 0.59 and 0.77 with latencies ranging from 1.4 sec to 3.1 sec. In addition, all subjects achieved a 100% BCI-FES response (no omissions, and one subject had a single false alarm. Conclusions This study suggests that the integration of a noninvasive BCI with a lower

  20. Brain-computer interface controlled functional electrical stimulation system for ankle movement.

    Science.gov (United States)

    Do, An H; Wang, Po T; King, Christine E; Abiri, Ahmad; Nenadic, Zoran

    2011-08-26

    Many neurological conditions, such as stroke, spinal cord injury, and traumatic brain injury, can cause chronic gait function impairment due to foot-drop. Current physiotherapy techniques provide only a limited degree of motor function recovery in these individuals, and therefore novel therapies are needed. Brain-computer interface (BCI) is a relatively novel technology with a potential to restore, substitute, or augment lost motor behaviors in patients with neurological injuries. Here, we describe the first successful integration of a noninvasive electroencephalogram (EEG)-based BCI with a noninvasive functional electrical stimulation (FES) system that enables the direct brain control of foot dorsiflexion in able-bodied individuals. A noninvasive EEG-based BCI system was integrated with a noninvasive FES system for foot dorsiflexion. Subjects underwent computer-cued epochs of repetitive foot dorsiflexion and idling while their EEG signals were recorded and stored for offline analysis. The analysis generated a prediction model that allowed EEG data to be analyzed and classified in real time during online BCI operation. The real-time online performance of the integrated BCI-FES system was tested in a group of five able-bodied subjects who used repetitive foot dorsiflexion to elicit BCI-FES mediated dorsiflexion of the contralateral foot. Five able-bodied subjects performed 10 alternations of idling and repetitive foot dorsifiexion to trigger BCI-FES mediated dorsifiexion of the contralateral foot. The epochs of BCI-FES mediated foot dorsifiexion were highly correlated with the epochs of voluntary foot dorsifiexion (correlation coefficient ranged between 0.59 and 0.77) with latencies ranging from 1.4 sec to 3.1 sec. In addition, all subjects achieved a 100% BCI-FES response (no omissions), and one subject had a single false alarm. This study suggests that the integration of a noninvasive BCI with a lower-extremity FES system is feasible. With additional modifications

  1. Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

    Science.gov (United States)

    Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

    2017-09-01

    Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

  2. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

    2017-02-15

    Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

  3. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    Directory of Open Access Journals (Sweden)

    S. Demirezen

    Full Text Available In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε′, ε′, tanδ, electric modulus (M′ and M″ and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε′, ε′, tanδ, M′, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε′, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε′ and ε″ values at low frequencies may be attributed to the Maxwell–Wagner and space charge polarization. The high values of ε′ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M′ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M′ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε′, ε″, tanδ, M′, M″ and ac electric conductivity (σac is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. Keywords: Thin films, Electrical properties, Interface/interphase

  4. Design and characterization of pentacene-inorganic interfaces

    International Nuclear Information System (INIS)

    Evans, Paul G.; Park, Byoungnam; Seo, Soonjoo; Zwickey, Jodi; In, Insik; Paoprasert, Peerasak; Gopalan, Padma

    2007-01-01

    The accumulation layer of organic thin film field-effect transistors extends away from the gate insulator/semiconductor interface by only a few molecular layers into the semiconductor thin film. The structure of these first few layers are thus crucially important to the electrical properties of devices and to the design of other functional structures incorporating organic/inorganic interfaces. We have used scanning tunneling microscopy to image the vacancies and grain boundaries in pentacene thin films on Si (0 0 1) substrates chemically terminated by styrene. The styrene termination allows pentacene molecules to form in a crystal structure similar to that of pentacene layers on the insulating substrates. In addition, by incorporating specially designed molecular monolayers at the interface between the gate insulator and the pentacene thin film, it is possible to form novel photoinduced charge-transfer structures. Tuning the chemical properties of the self-assembled monolayers affords a new degree of control in tuning the properties of these devices

  5. Negative compressibility at LaAlO{sub 3}/SrTiO{sub 3} interfaces explored with scanning force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tinkl, Veronika; Breitschaft, Martin; Hammerl, German; Kopp, Thilo [Experimentalphysik VI, Zentrum fuer Elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Augsburg (Germany); Richter, Christoph; Mannhart, Jochen [Experimentalphysik VI, Zentrum fuer Elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Augsburg (Germany); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2012-07-01

    The interface between the band insulators LaAlO{sub 3} and SrTiO{sub 3} is currently one of the most actively investigated structures in the field of oxide interfaces. If the LaAlO{sub 3}-film thickness exceeds three unit cells on a TiO{sub 2}-terminated SrTiO{sub 3} substrate a conducting layer is formed at the interface. This conducting layer can be driven insulating by electric fields. In this presentation we demonstrate that the interface exhibits negative compressibility as the carrier density is reduced. We investigated interfaces consisting of four unit cells LaAlO{sub 3} with a low temperature ultra-high vacuum scanning probe microscope. Contact potential difference measurements were performed at various carrier densities of the interface electron system. The difference in the work functions of interface and tip depends on the applied electric field. We show that the chemical potential at the interface increases with decreasing carrier density. This effect is caused by electron-electron interactions and corresponds to a negative compressibility. The negative compressibility gives rise to applications by, for example, making use of the resulting large enhancement of the capacitance.

  6. Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro

    1989-01-01

    A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

  7. Total internal reflection effect on gyrotropic interface

    Science.gov (United States)

    Glushchenko, Alexander G.; Glushchenko, Eugene P.; Zhukov, Sergey V.

    2018-02-01

    This article considers the physical features of total internal reflection at gyrotropic and isotropic interfaces for two cases: electrical gyrotropy (plasma) and magnetic gyrotropy (ferrite). It is shown that the plasma magnetization may lead to the formation of the total internal reflection effect, which does not occur in isotropic plasma. The threshold values of the magnetic field, which are necessary for the total internal reflection effect, are determined. The total internal reflection effect on a ferrite-dielectric interface for waves emanating from different angles is observed in various frequency ranges and magnetization fields. The study points out the possibility of changing the total internal reflection angle value in large limits due to a change in the external magnetic field magnitude. The calculation results of the total internal reflection angle dependence on the external magnetic field magnitude are presented. The formulas are elaborated for calculating the total internal reflection angles of different interfaces for gyrotropic and isotropic media. The generalized formulas are defined for calculating the Doppler effect in the gyrotropic media. The study demonstrates how the velocity of the media interface affects the limiting angle of total internal refection.

  8. The electric double layer put to work : thermal physics at electrochemical interfaces

    NARCIS (Netherlands)

    Janssen, M.A.

    2017-01-01

    Where charged electrode surfaces meet fluids that contain mobile ions, so-called electric double layers (EDLs) form to screen the electric surface charge by a diffuse cloud of counterionic charge in the fluid phase. This double layer has been studied for over a century and is of paramount importance

  9. Investigating the effect of multiple grain–grain interfaces on electric and magnetic properties of [50 wt% BaFe{sub 12}O{sub 19}–50 wt% Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}] composite system

    Energy Technology Data Exchange (ETDEWEB)

    Pattanayak, Ranjit, E-mail: ranjit.p20@gmail.com [Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008 (India); Muduli, Rakesh; Panda, Ranjit Kumar [Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008 (India); Dash, Tapan [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha (India); Sahu, Priyanka; Raut, Subhajit; Panigrahi, Simanchala [Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008 (India)

    2016-03-15

    This report presents the fabrication, electrical properties along with the magnetic parameters of a composite system considering a strong ferrimagnetic (BaFe{sub 12}O{sub 19}) and a ferroelectric (Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}) material. Polycrystalline 50 wt% BaFe{sub 12}O{sub 19} (BaM)–50 wt% Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} (NBT) composite system was prepared by the solid state reaction method. Rietveld refinement of XRD pattern confirms the presence of BaM and NBT phases without any impurity phase. From scanning electron micrograph both the phases are also clearly identified. In this report, the electric relaxation and conductivity properties were systematically investigated and analyzed in the frequency range of 100 Hz to 1 MHz and temperature range of 30–200 °C. The presence of different type of grains and significant reduction in the resistance of the composite system were found to be responsible for the nature of electric relaxation behavior. A peculiar and interesting evolution of grain boundary conduction was detected which was argued due to the existence of three possible grain boundaries such as: (i) BaM–BaM interface, (ii) NBT–NBT interface and (iii) BaM–NBT interface. The magnetization study (M–H loop) paves that, the saturation magnetization and coercive field reduces for composite system.

  10. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  11. Si-based optical I/O for optical memory interface

    Science.gov (United States)

    Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

    2012-01-01

    Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

  12. Direct observation of ionic structure at solid-liquid interfaces

    DEFF Research Database (Denmark)

    Siretanu, Igor; Ebeling, Daniel; Andersson, Martin Peter

    2014-01-01

    The distribution of ions and charge at solid-water interfaces plays an essential role in a wide range of processes in biology, geology and technology. While theoretical models of the solid-electrolyte interface date back to the early 20th century, a detailed picture of the structure of the electric...... double layer has remained elusive, largely because of experimental techniques have not allowed direct observation of the behaviour of ions, i.e. with subnanometer resolution. We have made use of recent advances in high-resolution Atomic Force Microscopy to reveal, with atomic level precision, the ordered...

  13. Electric vehicle station equipment for grid-integrated vehicles

    Science.gov (United States)

    Kempton, Willett; Kiamilev, Fouad; McGee, Rodney; Waite, Nick

    2017-09-05

    Methods, systems, and apparatus transferring power between the grid and an electric vehicle are disclosed. The apparatus may include at least one vehicle communication port for interfacing with electric vehicle equipment (EVE) and a processor coupled to the at least one vehicle communication port to establish communication with the EVE, receive EVE attributes from the EVE, and transmit electric vehicle station equipment (EVSE) attributes to the EVE. Power may be transferred between the grid and the electric vehicle by maintaining EVSE attributes, establishing communication with the EVE, and transmitting the EVSE maintained attributes to the EVE.

  14. Charge losses in silicon sensors and electric-field studies at the Si-SiO{sub 2} interface

    Energy Technology Data Exchange (ETDEWEB)

    Poehlsen, Thomas

    2013-07-15

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few {mu}m below the surface and very close to the surface, respectively. Segmented p{sup +}n silicon strip sensors are used to study the electric field below the SiO{sub 2} separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO{sub 2} interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO{sub 2} interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be

  15. Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage ...

    African Journals Online (AJOL)

    Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage Source Inverter Using Fixed-Band Hysteresis Current Controller Method. ... with the conversion of solar energy into electrical energy; boosting the dc power; inversion of the dc to ac and then synchronization of the inverter output with the utility, and consequently, ...

  16. L’interface cerveau-ordinateur: futur des jeux vidéo?

    NARCIS (Netherlands)

    Nijholt, Anton

    2017-01-01

    Brain-computer interfacing: the future of video games? Communication activity in the brain goes with changes in electrical activity (voltage differences) and oxygen flow. These changes can be measured and located: that makes it possible to translate them to appropriate commands to devices, robots or

  17. Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

    Science.gov (United States)

    Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

    2018-03-01

    Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

  18. Advanced electric drives analysis, control, and modeling using MATLAB/Simulink

    CERN Document Server

    Mohan, Ned

    2014-01-01

    Advanced Electric Drives utilizes a physics-based approach to explain the fundamental concepts of modern electric drive control and its operation under dynamic conditions. Gives readers a "physical" picture of electric machines and drives without resorting to mathematical transformations for easy visualization Confirms the physics-based analysis of electric drives mathematically Provides readers with an analysis of electric machines in a way that can be easily interfaced to common power electronic converters and controlled using any control scheme Makes the MATLAB/Simulink files used in exampl

  19. Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

    Science.gov (United States)

    Carman, Robert; Ward, Barry; Kane, Deborah

    2011-10-01

    The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

  20. Interface thermal characteristics of flip chip packages - A numerical study

    International Nuclear Information System (INIS)

    Kandasamy, Ravi; Mujumdar, A.S.

    2009-01-01

    Flip chip ball grid array (FC-BGA) packages are commonly used for high inputs/outputs (I/O) ICs; they have been proven to provide good solutions for a variety of applications to maximize thermal and electrical performance. A fundamental limitation to such devices is the thermal resistance at the top of the package, which is characterized θ JC parameter. The die-to-lid interface thermal resistance is identified as a critical issue for the thermal management of electronic packages. This paper focuses on the effect of the interface material property changes on the interface thermal resistance. The effect of package's junction to case (Theta-JC or θ JC ) thermal performance is investigated for bare die, flat lid and cup lid packages using a validated thermal model. Thermal performance of a cup or flat lid attached and bare die packages were investigated for different interface materials. Improved Theta-JC performance was observed for the large die as compared to the smaller die. Several parametric studies were carried out to understand the effects of interface bond line thickness (BLT), different die sizes, the average void size during assembly and thermal conductivity of interface materials on package thermal resistance

  1. The effect of peptides and ions interacting with an electrically neutral membrane interface on the structure and stability of lipid membranes in the liquid-crystalline phase and in the liquid-ordered phase

    Science.gov (United States)

    Sano, Ryoko; Masum, Shah Md; Tanaka, Tomoki; Yamashita, Yuko; Levadny, Victor; Yamazaki, Masahito

    2005-08-01

    We investigated the effects of a de novo designed peptide, WLFLLKKK (peptide-1) and La3+, which can bind with the electrically neutral lipid membrane interface, on the stability of the phosphatidylcholine (PC) membrane in the Lα phase and that of the liquid-ordered (lo) phase membranes. The results of spacing of the multilamellar vesicle and shape changes of the giant unilamellar vesicle (GUV) indicate that the peptide-1 can be partitioned into the membrane interface in the Lα phase but not into that in the lo phase. La3+ induced shape changes of GUVs of the lo phase membrane, which are the same as those of GUVs in the Lα phase. This indicates that the binding of La3+ induced an increase in the lateral compression pressure of the membrane, which decreased the surface area of the membrane in the lo phase. The difference of the membrane interface between the Lα phase and the lo phase is discussed.

  2. The effect of peptides and ions interacting with an electrically neutral membrane interface on the structure and stability of lipid membranes in the liquid-crystalline phase and in the liquid-ordered phase

    International Nuclear Information System (INIS)

    Sano, Ryoko; Masum, Shah Md; Tanaka, Tomoki; Yamashita, Yuko; Levadny, Victor; Yamazaki, Masahito

    2005-01-01

    We investigated the effects of a de novo designed peptide, WLFLLKKK (peptide-1) and La 3+ , which can bind with the electrically neutral lipid membrane interface, on the stability of the phosphatidylcholine (PC) membrane in the L α phase and that of the liquid-ordered (lo) phase membranes. The results of spacing of the multilamellar vesicle and shape changes of the giant unilamellar vesicle (GUV) indicate that the peptide-1 can be partitioned into the membrane interface in the L α phase but not into that in the lo phase. La 3+ induced shape changes of GUVs of the lo phase membrane, which are the same as those of GUVs in the L α phase. This indicates that the binding of La 3+ induced an increase in the lateral compression pressure of the membrane, which decreased the surface area of the membrane in the lo phase. The difference of the membrane interface between the L α phase and the lo phase is discussed

  3. Theoretical study of structure of electric field in helical toroidal plasmas

    International Nuclear Information System (INIS)

    Toda, S.; Itoh, K.

    2001-06-01

    A set of transport equations is analyzed, including the bifurcation of the electric field. The structure of the electric field is studied by use of the theoretical model for the anomalous transport diffusivities. The steep gradient of the electric field is obtained at the electric domain. The suppression of the anomalous transport diffusivity is studied in the presence of the strong shear of the electric field. The hard transition with the multiple ambipolar solutions is examined in the structure of the radial electric field. The details of the structure of the electric domain interface are investigated. (author)

  4. Mass and charge transport in IPMC actuators with fractal interfaces

    Science.gov (United States)

    Chang, Longfei; Wu, Yucheng; Zhu, Zicai; Li, Heng

    2016-04-01

    Ionic Polymer-Metal Composite (IPMC) actuators have been attracting a growing interest in extensive applications, which consequently raises the demands on the accuracy of its theoretical modeling. For the last few years, rough landscape of the interface between the electrode and the ionic membrane of IPMC has been well-documented as one of the key elements to ensure a satisfied performance. However, in most of the available work, the interface morphology of IPMC was simplified with structural idealization, which lead to perplexity in the physical interpretation on its interface mechanism. In this paper, the quasi-random rough interface of IPMC was described with fractal dimension and scaling parameters. And the electro-chemical field was modeled by Poisson equation and a properly simplified Nernst-Planck equation set. Then, by simulation with Finite Element Method, a comprehensive analysis on he inner mass and charge transportation in IPMC actuators with different fractal interfaces was provided, which may be further adopted to instruct the performance-oriented interface design for ionic electro-active actuators. The results also verified that rough interface can impact the electrical and mechanical response of IPMC, not only from the respect of the real surface increase, but also from mass distribution difference caused by the complexity of the micro profile.

  5. Electrically and Thermally Conducting Nanocomposites for Electronic Applications

    Directory of Open Access Journals (Sweden)

    Daryl Santos

    2010-02-01

    Full Text Available Nanocomposites made up of polymer matrices and carbon nanotubes are a class of advanced materials with great application potential in electronics packaging. Nanocomposites with carbon nanotubes as fillers have been designed with the aim of exploiting the high thermal, electrical and mechanical properties characteristic of carbon nanotubes. Heat dissipation in electronic devices requires interface materials with high thermal conductivity. Here, current developments and challenges in the application of nanotubes as fillers in polymer matrices are explored. The blending together of nanotubes and polymers result in what are known as nanocomposites. Among the most pressing current issues related to nanocomposite fabrication are (i dispersion of carbon nanotubes in the polymer host, (ii carbon nanotube-polymer interaction and the nature of the interface, and (iii alignment of carbon nanotubes in a polymer matrix. These issues are believed to be directly related to the electrical and thermal performance of nanocomposites. The recent progress in the fabrication of nanocomposites with carbon nanotubes as fillers and their potential application in electronics packaging as thermal interface materials is also reported.

  6. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  7. ASC-PROBA Interface Control Document

    DEFF Research Database (Denmark)

    Betto, Maurizio; Jørgensen, John Leif; Jørgensen, Finn E

    1999-01-01

    of Automation of the Technical University of Denmark. The document is structured as follows. First we present the ASC - heritage, system description, performance - then we address more specifically the environmental properties, like the EMC compatibility and thermal characteristics, and the design...... and reliability issues. Section 6 deals with the testing and the calibration procedures and in section 7 the mechanical and electrical interfaces are given. In section 8 and 9 we address issues like manufacturing, transportation and storage and to conclude we review the ASC specifications against the PROBA...

  8. Nano Trek Beyond: Driving Nanocars/Molecular Machines at Interfaces.

    Science.gov (United States)

    Ariga, Katsuhiko; Mori, Taizo; Nakanishi, Waka

    2018-03-09

    In 2016, the Nobel Prize in Chemistry was awarded for pioneering work on molecular machines. Half a year later, in Toulouse, the first molecular car race, a "nanocar race", was held by using the tip of a scanning tunneling microscope as an electrical remote control. In this Focus Review, we discuss the current state-of-the-art in research on molecular machines at interfaces. In the first section, we briefly explain the science behind the nanocar race, followed by a selection of recent examples of controlling molecules on surfaces. Finally, motion synchronization and the functions of molecular machines at liquid interfaces are discussed. This new concept of molecular tuning at interfaces is also introduced as a method for the continuous modification and optimization of molecular structure for target functions. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Interface structure and properties of CNTs/Cu composites fabricated by electroless deposition and spark plasma sintering

    Science.gov (United States)

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Song, Qi; Yin, Shi-Pan

    2018-01-01

    In this paper, we fabricated a novel copper matrix composites reinforced by carbon nanotubes (CNTs) using electroless deposition (ED) and spark plasma sintering technique. Microstructure, mechanical, electric conductivity, and thermal properties of the CNTs/Cu composites were investigated. The results show that a favorable interface containing C-O and O-Cu bond was formed between CNTs and matrix when the CNTs were coated with nano-Cu by ED method. Thus, we accomplished the uniformly dispersed CNTs in the CNTs/Cu powders and compacted composites, which eventually leads to the enhancement of the mechanical properties of the CNTs/Cu composites in the macro-scale environment. However, the interface structure can hinder the movement of carriers and free electrons and increase the interface thermal resistance, which leads to modest decrease of electrical and thermal conductivity of the CNTs/Cu composites.

  10. Molecular scale structure and dynamics at an ionic liquid/electrode interface

    DEFF Research Database (Denmark)

    Reichert, Peter; Kjær, Kasper Skov; Brandt van Driel, Tim

    2018-01-01

    After a century of research, the potential-dependent ion distribution at electrode/electrolyte interfaces is still under debate. In particular for solvent-free electrolytes such as room-temperature ionic liquids, classical theories for the electrical double layer are not applicable. Using a combi...

  11. Electrical activation and spin coherence of ultra low doseantimony implants in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schenkel, T.; Tyryshkin, A.M.; de Sousa, R.; Whaley, K.B.; Bokor,J.; Liddle, J.A.; Persaud, A.; Shangkuan, J.; Chakarov, I.; Lyon, S.A.

    2005-07-13

    We implanted ultra low doses (0.2 to 2 x 10{sup 11} cm{sup -2}) of Sb ions into isotopically enriched {sup 28}Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si{sub 3}N{sub 4} and SiO{sub 2} interfaces limits electrical activation. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant profiles, and the interface quality. A spin decoherence time, T{sub 2}, of 1.5 ms is found for profiles peaking 25 nm below a Si/SiO{sub 2} interface, increasing to 2.1 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

  12. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  13. Effects of Force Fields on Interface Dynamics, in view of Two-Phase Heat Transfer Enhancement and Phase Management for Space Applications

    Science.gov (United States)

    Di Marco, P.; Saccone, G.

    2017-11-01

    On earth, gravity barely influences the dynamics of interfaces. For what concerns bubbles, buoyancy governs the dynamics of boiling mechanism and thus affects boiling heat transfer capacity. While, for droplets, the coupled effects of wettability and gravity affects interface exchanges. In space, in the lack of gravity, rules are changed and new phenomena come into play. The present work is aimed to study the effects of electric field on the shape and behaviour of bubbles and droplets in order to understand how to handle microgravity applications; in particular, the replacement of gravity with electric field and their coupled effects are evaluated. The experiments spread over different setups, gravity conditions, working fluids, interface conditions. Droplets and bubbles have been analysed with and without electric field, with and without (adiabatic) heat and mass transfer across the interface. Furthermore, the results of the 4 ESA Parabolic Flight Campaigns (PFC 58, 60, 64 & 66), for adiabatic bubbles, adiabatic droplets and evaporating droplets, will be summarized, discussed, and compared with the ground tests.

  14. Potential barrier heights at metal on oxygen-terminated diamond interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Muret, P., E-mail: pierre.muret@neel.cnrs.fr; Traoré, A.; Maréchal, A.; Eon, D. [Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble, France and CNRS, Inst. NEEL, F-38042 Grenoble (France); Pernot, J. [Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, (France); CNRS, Inst. NEEL, F-38042 Grenoble, (France); Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris (France); Pinero, J. C.; Villar, M. P.; Araujo, D., E-mail: daniel.araujo@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2015-11-28

    Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO{sub 2} deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

  15. Study of physicochemical stability of the copper/polyphenylquinoxaline interfaces

    Science.gov (United States)

    Even, R.; Palleau, J.; Oberlin, J. C.; Pantel, R.; Laviale, D.; Templier, F.; Torres, J.; Giustiniani, R.; Cros, A.

    Thin film technologies are now applied in building up multilayered chip to chip interconnections to achieve agressive requirement such as high electrical performance or extreme compactness. Copper as conductor and a new polymeric material, a poly phenyl quinoxaline, as dielectric have been chose to fulfill demanding electrical and physical conditions. Thermal stability at the interface Cu/polymer and polymer/Cu during polymer curing process is very important to preserve good adhesion between the conductor and dielectric materials. We have studied in this work the interfacial behavior as a function of annealing temperature and of annealing atmosphere.

  16. Vehicle to Electric Vehicle Supply Equipment Smart Grid Communications Interface Research and Testing Report

    Energy Technology Data Exchange (ETDEWEB)

    Kevin Morrow; Dimitri Hochard; Jeff Wishart

    2011-09-01

    Plug-in electric vehicles (PEVs), including battery electric, plug-in hybrid electric, and extended range electric vehicles, are under evaluation by the U.S. Department of Energy's Advanced Vehicle Testing Activity (AVTA) and other various stakeholders to better understand their capability and potential petroleum reduction benefits. PEVs could allow users to significantly improve fuel economy over a standard hybrid electric vehicles, and in some cases, depending on daily driving requirements and vehicle design, PEVs may have the ability to eliminate petroleum consumption entirely for daily vehicle trips. The AVTA is working jointly with the Society of Automotive Engineers (SAE) to assist in the further development of standards necessary for the advancement of PEVs. This report analyzes different methods and available hardware for advanced communications between the electric vehicle supply equipment (EVSE) and the PEV; particularly Power Line Devices and their physical layer. Results of this study are not conclusive, but add to the collective knowledge base in this area to help define further testing that will be necessary for the development of the final recommended SAE communications standard. The Idaho National Laboratory and the Electric Transportation Applications conduct the AVTA for the United States Department of Energy's Vehicle Technologies Program.

  17. Implantable neurotechnologies: bidirectional neural interfaces--applications and VLSI circuit implementations.

    Science.gov (United States)

    Greenwald, Elliot; Masters, Matthew R; Thakor, Nitish V

    2016-01-01

    A bidirectional neural interface is a device that transfers information into and out of the nervous system. This class of devices has potential to improve treatment and therapy in several patient populations. Progress in very large-scale integration has advanced the design of complex integrated circuits. System-on-chip devices are capable of recording neural electrical activity and altering natural activity with electrical stimulation. Often, these devices include wireless powering and telemetry functions. This review presents the state of the art of bidirectional circuits as applied to neuroprosthetic, neurorepair, and neurotherapeutic systems.

  18. Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

    Science.gov (United States)

    Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

    2015-04-01

    AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

  19. A graphical user interface (gui) matlab program Synthetic_Ves For ...

    African Journals Online (AJOL)

    An interactive and robust computer program for 1D forward modeling of Schlumberger Vertical Electrical Sounding (VES) curves for multilayered earth models is presented. The Graphical User Interface (GUI) enabled software, written in MATLAB v.7.12.0.635 (R2011a), accepts user-defined geologic model parameters (i.e. ...

  20. Structure and Capacitance of Electrical Double Layers at the Graphene–Ionic Liquid Interface

    Directory of Open Access Journals (Sweden)

    Pengfei Lu

    2017-09-01

    Full Text Available Molecular dynamics simulations are carried out to investigate the structure and capacitance of the electrical double layers (EDLs at the interface of vertically oriented graphene and ionic liquids [EMIM]+/[BF4]−. The distribution and migration of the ions in the EDL on the rough and non-rough electrode surfaces with different charge densities are compared and analyzed, and the effect of the electrode surface morphology on the capacitance of the EDL is clarified. The results suggest that alternate distributions of anions and cations in several consecutive layers are formed in the EDL on the electrode surface. When the electrode is charged, the layers of [BF4]− anions experience more significant migration than those of [EMIM]+ cations. These ion layers can be extended deeper into the bulk electrolyte solution by the stronger interaction of the rough electrode, compared to those on the non-rough electrode surface. The potential energy valley of ions on the neutral electrode surface establishes a potential energy difference to compensate the energy cost of the ion accumulation, and is capable of producing a potential drop across the EDL on the uncharged electrode surface. Due to the greater effective contact area between the ions and electrode, the rough electrode possesses a larger capacitance than the non-rough one. In addition, it is harder for the larger-sized [EMIM]+ cations to accumulate in the narrow grooves on the rough electrode, when compared with the smaller [BF4]−. Consequently, the double-hump-shaped C–V curve (which demonstrates the relationship between differential capacitance and potential drop across the EDL for the rough electrode is asymmetric, where the capacitance increases more significantly when the electrode is positively charged.

  1. A comprehensive study of the electrically conducting water based CuO and Al2O3 nanoparticles over coupled nanofluid-sheet interface

    International Nuclear Information System (INIS)

    Ahmad, R

    2016-01-01

    Many studies on nanofluid flow over a permeable/impermeable sheet prescribe the kinematics of the sheet and disregard the sheet’s mechanics. However, the current study is one of the infrequent contributions that anticipate the mechanics of both the electrically conducting nanofluid (a homogeneous mixture of nanoparticles and base fluid) and the sheet. Two types of nanoparticles, alumina and copper, with water as a base fluid over the sheet are considered. With the help of the similarity transformations, the corresponding partial differential equations for the coupled nanofluid-sheet interface are transformed into a system of ordinary differential equations. The simulations are done by using the experimentally verified results from the previous studies for viscosity and thermal conductivity. Self-similar solutions are attained by considering both analytical and numerical techniques. Dual skin friction coefficients are attained with different copper and alumina nanoparticles over both the stretching and viscous sheets. The influence of the Eckert number, magnetic and mass suction/blowing parameters on the dimensionless velocity, temperature, skin friction and heat transfer rates over the nanofluid-sheet interface are presented graphically as well as numerically. The obtained results are of potential benefit for studying nanofluid flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations. (paper)

  2. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Interface inductive currents and carrier injection in hybrid perovskite single crystals

    Science.gov (United States)

    Kovalenko, Alexander; Pospisil, Jan; Krajcovic, Jozef; Weiter, Martin; Guerrero, Antonio; Garcia-Belmonte, Germà

    2017-10-01

    Interfaces between the absorbing perovskite and transporting layers are gaining attention as the key locus that governs solar cell operation and long term performance. The interplay of ionic and electronic processes, along with the asymmetrical architecture of any solar cell, makes the interpretation of electrical measurements always inconclusive. A strategy to progress in relating electric responses, operating mechanisms, and device architecture relies upon simplifying the probing structure. Macroscopic CH3NH3PbBr3 single crystals with symmetrical contacts are tested by means of long-time current transient and impedance spectroscopy. It is observed that interfaces govern carrier injection to (and extraction from) perovskite layers through an inductive (negative capacitance) mechanism with a response time in the range of ˜ 1 - 100 s under dark conditions and inert atmosphere. Current transient exhibits a slow recovering after the occurrence of an undershoot, signaling a complex carrier dynamics which involves changes in surface state occupancy.

  4. Liquid toroidal drop under uniform electric field

    Science.gov (United States)

    Zabarankin, Michael

    2017-06-01

    The problem of a stationary liquid toroidal drop freely suspended in another fluid and subjected to an electric field uniform at infinity is addressed analytically. Taylor's discriminating function implies that, when the phases have equal viscosities and are assumed to be slightly conducting (leaky dielectrics), a spherical drop is stationary when Q=(2R2+3R+2)/(7R2), where R and Q are ratios of the phases' electric conductivities and dielectric constants, respectively. This condition holds for any electric capillary number, CaE, that defines the ratio of electric stress to surface tension. Pairam and Fernández-Nieves showed experimentally that, in the absence of external forces (CaE=0), a toroidal drop shrinks towards its centre, and, consequently, the drop can be stationary only for some CaE>0. This work finds Q and CaE such that, under the presence of an electric field and with equal viscosities of the phases, a toroidal drop having major radius ρ and volume 4π/3 is qualitatively stationary-the normal velocity of the drop's interface is minute and the interface coincides visually with a streamline. The found Q and CaE depend on R and ρ, and for large ρ, e.g. ρ≥3, they have simple approximations: Q˜(R2+R+1)/(3R2) and CaE∼3 √{3 π ρ / 2 } (6 ln ⁡ρ +2 ln ⁡[96 π ]-9 )/ (12 ln ⁡ρ +4 ln ⁡[96 π ]-17 ) (R+1 ) 2/ (R-1 ) 2.

  5. Electrical circuit model of ITO/AZO/Ge photodetector.

    Science.gov (United States)

    Patel, Malkeshkumar; Kim, Joondong

    2017-10-01

    In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

  6. Finite element modeling of the neuron-electrode interface: stimulus transfer and geometry

    NARCIS (Netherlands)

    Buitenweg, Jan R.; Rutten, Wim; Marani, Enrico

    1999-01-01

    The relation between stimulus transfer and the geometry of the neuron-electrode interface can not be determined properly using electrical equivalent circuits, since current that flows from the sealing gap through the neuronal membrane is difficult to model in these circuits. Therefore, finite

  7. A review of organic and inorganic biomaterials for neural interfaces.

    Science.gov (United States)

    Fattahi, Pouria; Yang, Guang; Kim, Gloria; Abidian, Mohammad Reza

    2014-03-26

    Recent advances in nanotechnology have generated wide interest in applying nanomaterials for neural prostheses. An ideal neural interface should create seamless integration into the nervous system and performs reliably for long periods of time. As a result, many nanoscale materials not originally developed for neural interfaces become attractive candidates to detect neural signals and stimulate neurons. In this comprehensive review, an overview of state-of-the-art microelectrode technologies provided fi rst, with focus on the material properties of these microdevices. The advancements in electro active nanomaterials are then reviewed, including conducting polymers, carbon nanotubes, graphene, silicon nanowires, and hybrid organic-inorganic nanomaterials, for neural recording, stimulation, and growth. Finally, technical and scientific challenges are discussed regarding biocompatibility, mechanical mismatch, and electrical properties faced by these nanomaterials for the development of long-lasting functional neural interfaces.

  8. Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

    Science.gov (United States)

    Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

    2017-12-26

    The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

  9. The effect of peptides and ions interacting with an electrically neutral membrane interface on the structure and stability of lipid membranes in the liquid-crystalline phase and in the liquid-ordered phase

    Energy Technology Data Exchange (ETDEWEB)

    Sano, Ryoko [Department of Physics, Faculty of Science, Shizuoka University, Shizuoka, 422-8529 (Japan); Masum, Shah Md [Material Science, Graduate School of Science and Engineering, Shizuoka University, 422-8529 (Japan); Tanaka, Tomoki [Material Science, Graduate School of Science and Engineering, Shizuoka University, 422-8529 (Japan); Yamashita, Yuko [Department of Physics, Faculty of Science, Shizuoka University, Shizuoka, 422-8529 (Japan); Levadny, Victor [Department of Physics, Faculty of Science, Shizuoka University, Shizuoka, 422-8529 (Japan); Scientific Council for Cybernetics, Russian Academy of Sciences, Vavilov street 34, 333117, Moscow (Russian Federation); Yamazaki, Masahito [Department of Physics, Faculty of Science, Shizuoka University, Shizuoka, 422-8529 (Japan); Material Science, Graduate School of Science and Engineering, Shizuoka University, 422-8529 (Japan)

    2005-08-10

    We investigated the effects of a de novo designed peptide, WLFLLKKK (peptide-1) and La{sup 3+}, which can bind with the electrically neutral lipid membrane interface, on the stability of the phosphatidylcholine (PC) membrane in the L{sub {alpha}} phase and that of the liquid-ordered (lo) phase membranes. The results of spacing of the multilamellar vesicle and shape changes of the giant unilamellar vesicle (GUV) indicate that the peptide-1 can be partitioned into the membrane interface in the L{sub {alpha}} phase but not into that in the lo phase. La{sup 3+} induced shape changes of GUVs of the lo phase membrane, which are the same as those of GUVs in the L{sub {alpha}} phase. This indicates that the binding of La{sup 3+} induced an increase in the lateral compression pressure of the membrane, which decreased the surface area of the membrane in the lo phase. The difference of the membrane interface between the L{sub {alpha}} phase and the lo phase is discussed.

  10. Study of interfaces in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Maheshwari, P; Dutta, D; Sudarshan, K; Sharma, S K; Pujari, P K; Samanta, S; Singh, A; Aswal, D K

    2011-01-01

    The defect structure at the organic heterojunctions is studied using slow positron beam. The structural and electronic properties of heterojunctions are of technological and fundamental importance for understanding and optimization of electronic processes in organic devices. Interface trap centres play a significant role in the electrical conduction through the junctions. Depth dependent Doppler broadened annihilation measurements have been carried out in p- and n-type organic semiconductor thin films (30-80 nm) both single as well as multilayers grown on quartz substrate. The objective of the present study is to investigate the defect structure and to understand the behavior of positrons at the charged organic interfaces. Our result shows the sensitivity of positrons to the interfacial disorders that may be a convoluted effect of the presence of defects as well as the influence of the charge dipole in multilayers.

  11. Concurrent ionic migration and electronic effects at the memristive TiO x /La1/3Ca2/3MnO3-x interface

    Science.gov (United States)

    Román Acevedo, W.; Ferreyra, C.; Sánchez, M. J.; Acha, C.; Gay, R.; Rubi, D.

    2018-03-01

    The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiO x /La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiO x and La1/3Ca2/3MnO3-x , respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.

  12. Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

    1986-01-01

    We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

  13. Discharging a DC bus capacitor of an electrical converter system

    Science.gov (United States)

    Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

    2014-10-14

    A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

  14. Temperature dependence of contact resistance at metal/MWNT interface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

    2016-07-11

    Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

  15. Applicability of Donnan equilibrium theory at nanochannel-reservoir interfaces.

    Science.gov (United States)

    Tian, Huanhuan; Zhang, Li; Wang, Moran

    2015-08-15

    Understanding ionic transport in nanochannels has attracted broad attention from various areas in energy and environmental fields. In most pervious research, Donnan equilibrium has been applied widely to nanofluidic systems to obtain ionic concentration and electrical potential at channel-reservoir interfaces; however, as well known that Donnan equilibrium is derived from classical thermodynamic theories with equilibrium assumptions. Therefore the applicability of the Donnan equilibrium may be questionable when the transport at nanochannel-reservoir interface is strongly non-equilibrium. In this work, the Poisson-Nernst-Planck model for ion transport is numerically solved to obtain the exact distributions of ionic concentration and electrical potential. The numerical results are quantitatively compared with the Donnan equilibrium predictions. The applicability of Donnan equilibrium is therefore justified by changing channel length, reservoir ionic concentration, surface charge density and channel height. The results indicate that the Donnan equilibrium is not applicable for short nanochannels, large concentration difference and wide openings. A non-dimensional parameter, Q factor, is proposed to measure the non-equilibrium extent and the relation between Q and the working conditions is studied in detail. Copyright © 2015 Elsevier Inc. All rights reserved.

  16. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  17. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  18. Graphene and electric transport properties in graphene-superconductor interfaces

    OpenAIRE

    Manjarrés, Diego; Gómez, Shirley; Herrera, William

    2012-01-01

    El grafeno es una estructura bidimensional de carbono que tiene propiedades electrónicas que no son usuales y  donde los electrones son descritos por la ecuación de Dirac. Este material permite establecer una analogía entre la física de partículas y la materia condensada. La obtención del grafeno hace pocos años ha incentivado una gran cantidad de trabajos experimentales y teóricos con el propósito de poder entender y manipular sus propiedades. Actualmente se han investigado diferentes juntur...

  19. Sum-Frequency Generation from Chiral Media and Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Na [Univ. of California, Berkeley, CA (United States)

    2006-02-13

    Sum frequency generation (SFG), a second-order nonlinear optical process, is electric-dipole forbidden in systems with inversion symmetry. As a result, it has been used to study chiral media and interfaces, systems intrinsically lacking inversion symmetry. This thesis describes recent progresses in the applications of and new insights into SFG from chiral media and interfaces. SFG from solutions of chiral amino acids is investigated, and a theoretical model explaining the origin and the strength of the chiral signal in electronic-resonance SFG spectroscopy is discussed. An interference scheme that allows us to distinguish enantiomers by measuring both the magnitude and the phase of the chiral SFG response is described, as well as a chiral SFG microscope producing chirality-sensitive images with sub-micron resolution. Exploiting atomic and molecular parity nonconservation, the SFG process is also used to solve the Ozma problems. Sum frequency vibrational spectroscopy is used to obtain the adsorption behavior of leucine molecules at air-water interfaces. With poly(tetrafluoroethylene) as a model system, we extend the application of this surface-sensitive vibrational spectroscopy to fluorine-containing polymers.

  20. Sum-Frequency Generation from Chiral Media and Interfaces

    International Nuclear Information System (INIS)

    Ji, Na

    2006-01-01

    Sum frequency generation (SFG), a second-order nonlinear optical process, is electric-dipole forbidden in systems with inversion symmetry. As a result, it has been used to study chiral media and interfaces, systems intrinsically lacking inversion symmetry. This thesis describes recent progresses in the applications of and new insights into SFG from chiral media and interfaces. SFG from solutions of chiral amino acids is investigated, and a theoretical model explaining the origin and the strength of the chiral signal in electronic-resonance SFG spectroscopy is discussed. An interference scheme that allows us to distinguish enantiomers by measuring both the magnitude and the phase of the chiral SFG response is described, as well as a chiral SFG microscope producing chirality-sensitive images with sub-micron resolution. Exploiting atomic and molecular parity nonconservation, the SFG process is also used to solve the Ozma problems. Sum frequency vibrational spectroscopy is used to obtain the adsorption behavior of leucine molecules at air-water interfaces. With poly(tetrafluoroethylene) as a model system, we extend the application of this surface-sensitive vibrational spectroscopy to fluorine-containing polymers

  1. Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

    Science.gov (United States)

    Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

    2011-11-09

    Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

  2. Interface of data transmission for a transcutaneous communication system using the human body as transmission medium.

    Science.gov (United States)

    Okamoto, Eiji; Kato, Yoshikuni; Seino, Kazuyuki; Mitamura, Yoshinori

    2012-03-01

    We have been developing a new transcutaneous communication system (TCS) that uses the human body as an electrical conductive medium. We studied an interface circuit of the TCS in order to optimize the leading data current into the human body effectively. Two types of LC circuits were examined for the interface circuit, one was an LC series-parallel circuit, and the other was a parallel-connected LC circuit. The LC series-parallel circuit connected to the body could be tuned to a resonant frequency, and the frequency was determined by the values of an external inductor and an external capacitor. Permittivity of the body did not influence the electrical resonance. Connection of the LC series-parallel circuit to the body degraded the quality factor Q because of the conductivity of the body. However, the LC parallel-connected circuit when connected to the body did not indicate electrical resonance. The LC series-parallel circuit restricts a direct current and a low-frequency current to flow into the body; thus, it can prevent a patient from getting a shock. According to the above results, an LC series-parallel circuit is an optimum interface circuit between the TCS and the body for leading data current into the body effectively and safely.

  3. Mechanism of ion adsorption to aqueous interfaces: Graphene/water vs. air/water.

    Science.gov (United States)

    McCaffrey, Debra L; Nguyen, Son C; Cox, Stephen J; Weller, Horst; Alivisatos, A Paul; Geissler, Phillip L; Saykally, Richard J

    2017-12-19

    The adsorption of ions to aqueous interfaces is a phenomenon that profoundly influences vital processes in many areas of science, including biology, atmospheric chemistry, electrical energy storage, and water process engineering. Although classical electrostatics theory predicts that ions are repelled from water/hydrophobe (e.g., air/water) interfaces, both computer simulations and experiments have shown that chaotropic ions actually exhibit enhanced concentrations at the air/water interface. Although mechanistic pictures have been developed to explain this counterintuitive observation, their general applicability, particularly in the presence of material substrates, remains unclear. Here we investigate ion adsorption to the model interface formed by water and graphene. Deep UV second harmonic generation measurements of the SCN - ion, a prototypical chaotrope, determined a free energy of adsorption within error of that for air/water. Unlike for the air/water interface, wherein repartitioning of the solvent energy drives ion adsorption, our computer simulations reveal that direct ion/graphene interactions dominate the favorable enthalpy change. Moreover, the graphene sheets dampen capillary waves such that rotational anisotropy of the solute, if present, is the dominant entropy contribution, in contrast to the air/water interface.

  4. Modelling of dynamic equivalents in electric power grids

    International Nuclear Information System (INIS)

    Craciun, Diana Iuliana

    2010-01-01

    In a first part, this research thesis proposes a description of the context and new constraints of electric grids: architecture, decentralized production with the impact of distributed energy resource systems, dynamic simulation, and interest of equivalent models. Then, the author discusses the modelling of the different components of electric grids: synchronous and asynchronous machines, distributed energy resource with power electronic interface, loading models. She addresses the techniques of reduction of electric grid models: conventional reduction methods, dynamic equivalence methods using non linear approaches or evolutionary algorithm-based methods of assessment of parameters. This last approach is then developed and implemented, and a new method of computation of dynamic equivalents is described

  5. Electrical circuit model of ITO/AZO/Ge photodetector

    Directory of Open Access Journals (Sweden)

    Malkeshkumar Patel

    2017-10-01

    Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

  6. Stability of horizontal viscous fluid layers in a vertical arbitrary time periodic electric field

    Science.gov (United States)

    Bandopadhyay, Aditya; Hardt, Steffen

    2017-12-01

    The stability of a horizontal interface between two viscous fluids, one of which is conducting and the other is dielectric, acted upon by a vertical time-periodic electric field is considered theoretically. The two fluids are bounded by electrodes separated by a finite distance. For an applied ac electric field, the unstable interface deforms in a time periodic manner, owing to the time dependent Maxwell stress, and is characterized by the oscillation frequency which may or may not be the same as the frequency of the ac electric field. The stability curve, which relates the critical voltage, manifested through the Mason number—the ratio of normal electric stress and viscous stress, and the instability wavenumber at the onset of the instability, is obtained by means of the Floquet theory for a general arbitrary time periodic electric field. The limit of vanishing viscosities is shown to be in excellent agreement with the marginal stability curves predicted by means of a Mathieu equation. The influence of finite viscosity and electrode separation is discussed in relation to the ideal case of inviscid fluids. The methodology to obtain the marginal stability curves developed here is applicable to any arbitrary but time periodic signal, as demonstrated for the case of a signal with two different frequencies, and four different frequencies with a dc offset. The mode coupling in the interfacial normal stress leads to appearance of harmonic and subharmonic modes, characterized by the frequency of the oscillating interface at an integral or half-integral multiple of the applied frequency, respectively. This is in contrast to the application of a voltage with a single frequency which always leads to a harmonic mode oscillation of the interface. Whether a harmonic or subharmonic mode is the most unstable one depends on details of the excitation signal.

  7. Giant tunability of the two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3

    DEFF Research Database (Denmark)

    Niu, Wei; Zhang, Yu; Gan, Yulin

    2017-01-01

    a dielectric solid insulator, i.e. in the configuration of conventional field-effect transistors. To surpass this long-standing limit, we used ionic liquids as the dielectric layer for electrostatic gating of oxide interfaces in an electric double layer transistor (EDLT) configuration. Herein, we reported......Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide a rich platform for the next generation of electronic devices. However, their high carrier density makes it rather challenging to control the interface properties under a low electric field through...

  8. Feasibility study of wind-generated electricity for rural applications in southwestern Ohio

    Science.gov (United States)

    Kohring, G. W.

    The parameters associated with domestic production of wind generated electricity for direct use by small farms and rural homes in the southwestern Ohio region are discussed. The project involves direct utility interfaced electricity generation from a horizontal axis, down-wind, fixed pitch, wind powered induction generator system. Goals of the project are to determine: the ability to produce useful amounts of domestic wind generated electricity in the southwestern Ohio region; economic justification for domestic wind generated electrical production; and the potential of domestic wind generated electricity for reducing dependence on non-renewable energy resources in the southwestern Ohio region.

  9. Electrical double layer modulation of hybrid room temperature ionic liquid/aqueous buffer interface for enhanced sweat based biosensing.

    Science.gov (United States)

    Jagannath, Badrinath; Muthukumar, Sriram; Prasad, Shalini

    2018-08-03

    We have investigated the role of kosmotropic anionic moieties and chaotropic cationic moieties of room temperature hydrophilic ionic liquids in enhancing the biosensing performance of affinity based immunochemical biosensors in human sweat. Two ionic liquids, 1-butyl-3-methylimidazolium tetrafluoroborate (BMIM[BF 4 ]) and choline dihydrogen phosphate (Choline[DHP]) were investigated in this study with Choline[DHP] being more kosmotropic in nature having a more protein stabilizing effect based on the hofmeister series. Non-faradaic interfacial charge transfer has been employed as the mechanism for evaluating the formation and the biosensing of capture probe antibodies in room temperature ionic liquids (RTILs)/aqueous human sweat interface. The charge of the ionic moieties were utilized to form compact electrical double layers around the antibodies for enhancing the stability of the antibody capture probes, which was evaluated through zeta potential measurements. The zeta potential measurements indicated stability of antibodies due to electrostatic repulsion of the RTIL charged moieties encompassing the antibodies, thus preventing any aggregation. Here, we report for the first time of non-faradaic electrochemical impedance spectroscopy equivalent circuit model analysis for analyzing and interpreting affinity based biosensing at hybrid electrode/ionic liquid-aqueous sweat buffer interface guided by the choice of the ionic liquid. Interleukin-6 (IL-6) and cortisol two commonly occurring biomarkers in human sweat were evaluated using this method. The limit of detection (LOD) obtained using both ionic liquids for IL-6 was 0.2 pg mL -1 with cross-reactivity studies indicating better performance of IL-6 detection using Choline[DHP] and no response to cross-reactive molecule. The LOD of 0.1 ng/mL was achieved for cortisol and the cross-reactivity studies indicated that cortisol antibody in BMIM[BF 4 ] did not show any signal response to cross-reactive molecules

  10. Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

    NARCIS (Netherlands)

    Kroezen, H. J.; Eising, G.; ten Brink, Gert; Palasantzas, G.; Kooi, B. J.; Pauza, A.

    2012-01-01

    The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface

  11. Microstructural studies on degradation of interface between LSM–YSZ cathode and YSZ electrolyte in SOFCs

    DEFF Research Database (Denmark)

    Liu, Yi-Lin; Hagen, Anke; Barfod, Rasmus

    2009-01-01

    The changes in the cathode/electrolyte interface microstructure have been studied on anode-supported technological solid oxide fuel cells (SOFCs) that were subjected to long-term (1500 h) testing at 750 °C under high electrical loading (a current density of 0.75 A/cm2). These cells exhibit...... different cathode degradation rates depending on, among others, the composition of the cathode gas, being significantly smaller in oxygen than in air. FE-SEM and high resolution analytical TEM were applied for characterization of the interface on a submicron- and nano-scale. The interface degradation has...... to decrease further due to the more pronounced formation of insulating zirconate phases that are present locally and preferably in LSM/YSZ electrolyte contact areas. The effects of the cathode gas on the interface degradation are discussed considering the change of oxygen activity at the interface, possible...

  12. Kinetic Interface

    DEFF Research Database (Denmark)

    2009-01-01

    A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises.......A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises....

  13. Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Y., E-mail: wangyy@buaa.edu.cn [Department of Physics, Beihang University, Beijing 100191 (China); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Song, C., E-mail: songcheng@mail.tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, J.Y. [Department of Physics, Beihang University, Beijing 100191 (China); Pan, F. [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2017-04-15

    The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

  14. Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

  15. Two modes of wave propagation manifested in vertical electric dipole radiation over a sphere

    International Nuclear Information System (INIS)

    Houdzoumis, Vassilios A.

    2000-01-01

    The radiation of a vertical electric dipole over an electrically homogeneous sphere is considered anew, starting with a novel mathematical formulation. Both the dipole and the point of observation are assumed to lie on the spherical interface. The analysis is valid for a sphere whose radius is much larger than the wavelength in the outside region. Contributions to the value of the fields come, on the one hand, from the waves that propagate along the interface and, on the other hand, from the waves that propagate through the sphere by successive reflections. (c) 2000 American Geophysical Union

  16. Influence of Interface Gap on the Stress Behaviour of Smart Single Lap Joints Under Time Harmonic Load

    Directory of Open Access Journals (Sweden)

    Ivanova Jordanka

    2017-06-01

    Full Text Available Adhesive joints are frequently used in different composite structures due to their improved mechanical performance and better understanding of the failure mechanics. The application of such structures can be seen in aerospace and high technology components. The authors developed and applied modified shear lag analysis to investigate the hygrothermalpiezoelectric response of a smart single lap joint at environmental conditions (with/without an interface gap along the overlap zone and under dynamic time harmonic mechanical and electric loads. The main key is the study of the appearance of possible delamination along the interface. As illustrative examples, the analytical closed form solution of the structure shear and the axial stresses response, as well as the interface debond length, including influence of mechanical, piezoelectric, thermal characteristics and frequencies is performed and discussed. All results are presented in figures. The comparison of the shear stress and electric fields for both cases of overlap zone (continuous or with a gap is also shown in figures and discussed.

  17. Experimental and theoretical investigations on temperature distribution at the joint interface for copper joints using ultrasonic welding

    Directory of Open Access Journals (Sweden)

    Elangovan Sooriya

    2014-01-01

    Full Text Available Ultrasonic welding is a solid-state joining process that produces joints by the application of high frequency vibratory energy in the work pieces held together under pressure without melting. Copper and its alloys are extensively used in electrical and electronic industry because of its excellent electrical and thermal properties. This paper mainly focused on temperature distribution and the influence of process parameters at the joint interface while joining copper sheets using ultrasonic welding process. Experiments are carried out using Cu sheets (0.2 mm and 0.3 mm thickness and the interface temperature is measured using Data Acquisition (DAQ System (thermocouple and thermal imager. Numerical and finite element based model for temperature distribution at the interface are developed and solved the same using Finite Difference Method (FDM and Finite Element Analysis (FEA. The results obtained from FDM and FEA model shows similar trend with experimental results and are found to be in good agreement.

  18. Multi-Megawatt-Scale Power-Hardware-in-the-Loop Interface for Testing Ancillary Grid Services by Converter-Coupled Generation: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Koralewicz, Przemyslaw J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Gevorgian, Vahan [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Wallen, Robert B [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-07-26

    Power-hardware-in-the-loop (PHIL) is a simulation tool that can support electrical systems engineers in the development and experimental validation of novel, advanced control schemes that ensure the robustness and resiliency of electrical grids that have high penetrations of low-inertia variable renewable resources. With PHIL, the impact of the device under test on a generation or distribution system can be analyzed using a real-time simulator (RTS). PHIL allows for the interconnection of the RTS with a 7 megavolt ampere (MVA) power amplifier to test multi-megawatt renewable assets available at the National Wind Technology Center (NWTC). This paper addresses issues related to the development of a PHIL interface that allows testing hardware devices at actual scale. In particular, the novel PHIL interface algorithm and high-speed digital interface, which minimize the critical loop delay, are discussed.

  19. Interface effects on the electronic transport properties in highly epitaxial LaBaCo2O(5.5+δ) films.

    Science.gov (United States)

    Ma, C R; Liu, M; Liu, J; Collins, G; Zhang, Y M; Wang, H B; Chen, C L; Lin, Y; He, J; Jiang, J C; Meletis, E I; Jacobson, A J

    2014-02-26

    Single-crystalline perovskite LaBaCo2O5.5+δ thin films were grown on a (110) NdGaO3 single-crystal substrate in order to systematically investigate the effect of lattice mismatch on the electrical transport properties in comparison to the films on LaAlO3, SrTiO3, and MgO substrates. Microstructure studies reveal that all of the LaBaCo2O5.5+δ films are of excellent quality with atomically sharp interface structures. The electrical and magnetic transport property studies indicate that the resistivity, magnetoresistance, and magnetic moment of the film are very sensitive to the substrate materials because of the lattice mismatch/interface strain. The Curie temperature, however, is almost independent of the strain imposed by the substrate, probably because of the strong coupling between the nanodomain boundary and interface strain.

  20. MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

    International Nuclear Information System (INIS)

    Kamwanna, T.; Pasaja, N.; Yu, L.D.; Vilaithong, T.; Anders, A.; Singkarat, S.

    2008-01-01

    Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He 2+ ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film.

  1. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  2. Non-aqueous CE-MS of cinchona alkaloids - characterizationof a novel CE-ESI-MS interface

    DEFF Research Database (Denmark)

    Hansen, Frederik André; Hansen, Steen Honoré; Petersen, Nickolaj J.

    We have recently in our group at the University of Copenhagen developed a robust and simple sheatless CE-ESI-MS interface (capillary electrophoresis – electrospray ionization-mass spectrometry). In this presentation the interface is characterized and compared with HPLC-MS for studying...... a submicron fracture in the capillary close the ESI tip. The fracture provides a zero dead volume and excellent conducting properties due to the large amount of ions in the electric double layer. Electric current exceeding the upper limit of CE instrumentation of up to 300 µA can easily be obtained....... Furthermore, the increased conductivity of the buffer in the fracture generates field free pumping of the analytes towards the ESI spray tip. In this study the device was used to analyze the four major alkaloids (diastereomeric pairs of quinine/quinidine and cinchonine/cinchonidine) in Cinchona bark samples...

  3. Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

    NARCIS (Netherlands)

    Roy, Deepu; Gravesteijn, Dirk J; Wolters, Robertus A.M.

    2011-01-01

    We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the

  4. Possibility of internal transport barrier formation and electric field bifurcation in LHD plasma

    International Nuclear Information System (INIS)

    Sanuki, H.; Itoh, K.; Yokoyama, M.; Fujisawa, A.; Ida, K.; Toda, S.; Itoh, S.-I.; Yagi, M.; Fukuyama, A.

    1999-05-01

    Theoretical analysis of the electric field bifurcation is made for the LHD plasma. For given shapes of plasma profiles, a region of bifurcation is obtained in a space of the plasma parameters. In this region of plasma parameters, the electric field domain interface is predicted to appear in the plasma column. The reduction of turbulent transport is expected to occur in the vicinity of the interface, inducing a internal transport barrier. Within this simple model, the plasma with internal barriers is predicted to be realized for the parameters of T e (0) ∼ 2 keV and n(0) ≅ 10 18 m -3 . (author)

  5. Electrically tuned super-capacitors

    OpenAIRE

    Chowdhury, Tazima S.; Grebel, Haim

    2015-01-01

    Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

  6. Towards a real-time interface between a biomimetic model of sensorimotor cortex and a robotic arm

    OpenAIRE

    Dura-Bernal, Salvador; Chadderdon, George L; Neymotin, Samuel A; Francis, Joseph T; Lytton, William W

    2014-01-01

    Brain-machine interfaces can greatly improve the performance of prosthetics. Utilizing biomimetic neuronal modeling in brain machine interfaces (BMI) offers the possibility of providing naturalistic motor-control algorithms for control of a robotic limb. This will allow finer control of a robot, while also giving us new tools to better understand the brain’s use of electrical signals. However, the biomimetic approach presents challenges in integrating technologies across multiple hardware and...

  7. Effect of Semicon-Dielectric Interface on Conductivity and Electric Field Distribution

    DEFF Research Database (Denmark)

    Hjerrild, J.; Holbøll, Joachim; Henriksen, Mogens

    2002-01-01

    in distortion of the electric field and space charge formation under dc conditions. Analytical approximations and numerical computations provide a basis for analyzing space charge measurements, and based on such space charge measurements and the analysis, we estimate the field distortion for several material...

  8. Facilitating a generic communication interface to distributed energy resources

    DEFF Research Database (Denmark)

    Pedersen, Anders Bro; Hauksson, Einar Bragi; Andersen, Peter Bach

    2010-01-01

    As the power system evolves into a smarter and more flexible state, so must the communication technologies that support it. A key requirement for facilitating the distributed production of future grids is that communication and information are standardized to ensure interoperability. The IEC 61850...... a server using these technologies can be used to interface with DERs as diverse as Electric Vehicles (EVs) and micro Combined Heat and Power (μCHP) units....

  9. Low-dielectric layer increases nanosecond electric discharges in distilled water

    KAUST Repository

    Hamdan, Ahmad

    2016-10-24

    Electric discharge in liquids is an emerging field of research, and is involved into various environmental applications (water purification, fuel reforming, nanomaterial synthesis, etc.). Increasing the treatment efficiency with simultaneous decreasing of the energy consumption are the main goals of today’s research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge efficiency can be improved by changing the interface position regarding the anode tip. The efficiency increase is due to the increase of the discharge probability as well as the plasma volume. The understanding of the experimental results is brought and strengthened by simulating the electric field distribution, using Comsol Multiphysics software. Because the dielectric permittivity (ε) is discontinuous at the interface, the electric field is enhanced by a factor that depends on the relative value of ε of the two liquids. The present result is very promising in future: opportunities for potential applications as well as fundamental studies for discharges in liquid.

  10. Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2015-12-01

    Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

  11. REVIEW ON GRID INTERFACING OF MULTIMEGAWATT PHOTOVOLTAIC INVERTERS

    OpenAIRE

    Mr. Vilas S. Solanke*; Mr. Naveen Kumar

    2016-01-01

    This paper presents review on the latest development of control of grid connected photovoltaic energy conversion system. Also this paper present existing systems control algorithm for three-phase and single phase grid-connected photovoltaic (PV) system. This paper focuses on one aspect of solar energy, namely grid interfacing of large-scale PV farms. This Grid-connected photovoltaic i.e. PV systems can provide a number of benefits to electric utilities, such as power loss reduction, improve...

  12. Performance characteristic of saturable three-phase interface transformers-investigations using a model simulation

    Energy Technology Data Exchange (ETDEWEB)

    Gierse, G; Pestka, J

    1981-11-01

    For electric locomotive drives equipped with converter fed squirrel cage induction motors the influence of different three-phase interface transformers on the smoothing of the motor currents is shown. In combination with a modified pulse-width-controlled thyristor firing system the size of the interface transformers can be greatly reduced without the distortion currents being greater than in the case of reactors in the motor supply lines. Finally, it is shown how the additional magnetic coupling of two driving systems can influence the behaviour of the two motors.

  13. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  14. The mechanical design of hybrid graphene/boron nitride nanotransistors: Geometry and interface effects

    Science.gov (United States)

    Einalipour Eshkalak, Kasra; Sadeghzadeh, Sadegh; Jalaly, Maisam

    2018-02-01

    From electronic point of view, graphene resembles a metal or semi-metal and boron nitride is a dielectric material (band gap = 5.9 eV). Hybridization of these two materials opens band gap of the graphene which has expansive applications in field-effect graphene transistors. In this paper, the effect of the interface structure on the mechanical properties of a hybrid graphene/boron nitride was studied. Young's modulus, fracture strain and tensile strength of the models were simulated. Three likely types (hexagonal, octagonal and decagonal) were found for the interface of hybrid sheet after relaxation. Although Csbnd B bonds at the interface were indicated to result in more promising electrical properties, nitrogen atoms are better choice for bonding to carbon for mechanical applications.

  15. Influence of interface-included disorder on classical quantum conductivity of CdTe:In epitaxial layers

    International Nuclear Information System (INIS)

    Lusakowski, J.; Karpierz, K.; Grynberg, M.; Karczewski, G.; Wojtowicz, T.; Contreras, S.; Callen, O.

    1997-01-01

    An influence of disorder originated from the substrate/layer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes. (author)

  16. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

    Directory of Open Access Journals (Sweden)

    S. Tongay

    2012-01-01

    Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

  17. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  18. Identifying cochlear implant channels with poor electrode-neuron interface: electrically-evoked auditory brainstem responses measured with the partial tripolar configuration

    Science.gov (United States)

    Bierer, Julie Arenberg; Faulkner, Kathleen F.; Tremblay, Kelly L.

    2011-01-01

    Objectives The goal of this study was to compare cochlear implant behavioral measures and electrically-evoked auditory brainstem responses (EABRs) obtained with a spatially focused electrode configuration. It has been shown previously that channels with high thresholds, when measured with the tripolar configuration, exhibit relatively broad psychophysical tuning curves (Bierer and Faulkner, 2010). The elevated threshold and degraded spatial/spectral selectivity of such channels are consistent with a poor electrode-neuron interface, such as suboptimal electrode placement or reduced nerve survival. However, the psychophysical methods required to obtain these data are time intensive and may not be practical during a clinical mapping procedure, especially for young children. Here we have extended the previous investigation to determine if a physiological approach could provide a similar assessment of channel functionality. We hypothesized that, in accordance with the perceptual measures, higher EABR thresholds would correlate with steeper EABR amplitude growth functions, reflecting a degraded electrode-neuron interface. Design Data were collected from six cochlear implant listeners implanted with the HiRes 90k cochlear implant (Advanced Bionics). Single-channel thresholds and most comfortable listening levels were obtained for stimuli that varied in presumed electrical field size by using the partial tripolar configuration, for which a fraction of current (σ) from a center active electrode returns through two neighboring electrodes and the remainder through a distant indifferent electrode. EABRs were obtained in each subject for the two channels having the highest and lowest tripolar (σ=1 or 0.9) behavioral threshold. Evoked potentials were measured with both the monopolar (σ=0) and a more focused partial tripolar (σ ≥ 0.50) configuration. Results Consistent with previous studies, EABR thresholds were highly and positively correlated with behavioral thresholds

  19. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

    Energy Technology Data Exchange (ETDEWEB)

    Anzalone, R., E-mail: ruggero.anzalone@imm.cnr.it; Privitera, S.; Camarda, M.; Alberti, A.; Mannino, G.; Fiorenza, P.; Di Franco, S.; La Via, F.

    2015-08-15

    Graphical abstract: Figure shows the normalized capacitance (C/C{sub OX}) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C–SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density D{sub it}, located at the semiconductor/oxide interface. - Highlights: • We analyzed the flat-band voltage shift for different semiconductor epi-thickness. • The interface state density as a function of epi-defects was evaluated. • We observed the relationship between XRD and C–V results. • Epitaxial thickness influence on interface state density was evaluated. - Abstract: The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10{sup 11} cm{sup −2} eV{sup −1} was observed with improving the crystalline quality.

  20. The Rayleigh-Taylor instability under electrical pulse discharge in water

    International Nuclear Information System (INIS)

    Kononov, A.V.; Porytskyy, P.V.; Starchyk, P.D.; Voitenko, L.M.

    1999-01-01

    The development of the Rayleigh-Taylor instability is studied on the interface between both the plasma channel and liquid medium under an electrical pulse discharge in water.It is shown that,growth of the irregularities of the contact interface leads to the increasing of heat flux from the discharge channel due to the growth of an interfacial area and the incoming of water matter into a discharge channel.As a result of these processes the characteristics of the discharge may be strongly varied

  1. Transport properties at 3C-SiC interfaces

    OpenAIRE

    Eriksson, Gustav Jens Peter

    2011-01-01

    For years cubic (3C) silicon carbide (SiC) has been believed to be a very promising wide bandgap semiconductor for high frequency and high power electronics. However, 3C-SiC is fraught with large concentrations of various defects, which have so far hindered the achievement of the predicted properties at a macroscopic level. These defects have properties that are inherently nanoscale and that will have a strong influence on the electrical behavior of the material, particularly at interfaces c...

  2. Power Conditioning and Stimulation for Wireless Neural Interface ICs

    OpenAIRE

    Biederman, William

    2014-01-01

    Brain machine interfaces have the potential to revolutionize our understanding of the brain, restore motor function, and improve the quality of life to patients with neurological con- ditions. In recent human trials, control of robotic prostheses has been demonstrated using micro-electrode arrays, which provide high spatio-temporal resolution and an electrical feed- back path to the brain. However, after implantation, scar tissue degrades the recording signal-to-noise ratio and limits the use...

  3. Nickel-Graphite Composite Compliant Interface and/or Hot Shoe Material

    Science.gov (United States)

    Firdosy, Samad A.; Chun-Yip Li, Billy; Ravi, Vilupanur A.; Fleurial, Jean-Pierre; Caillat, Thierry; Anjunyan, Harut

    2013-01-01

    Next-generation high-temperature thermoelectric-power-generating devices will employ segmented architectures and will have to reliably withstand thermally induced mechanical stresses produced during component fabrication, device assembly, and operation. Thermoelectric materials have typically poor mechanical strength, exhibit brittle behavior, and possess a wide range of coefficient of thermal expansion (CTE) values. As a result, the direct bonding at elevated temperatures of these materials to each other to produce segmented leg components is difficult, and often results in localized microcracking at interfaces and mec hanical failure due to the stresses that arise from the CTE mismatch between the various materials. Even in the absence of full mechanical failure, degraded interfaces can lead to increased electrical and thermal resistances, which adversely impact conversion efficiency and power output. The proposed solution is the insertion of a mechanically compliant layer, with high electrical and thermal conductivity, between the low- and high-temperature segments to relieve thermomechanical stresses during device fabrication and operation. This composite material can be used as a stress-relieving layer between the thermoelectric segments and/or between a thermoelectric segment and a hot- or cold-side interconnect material. The material also can be used as a compliant hot shoe. Nickel-coated graphite powders were hot-pressed to form a nickel-graphite composite material. A freestanding thermoelectric segmented leg was fabricated by brazing the compliant pad layer between the high-temperature p- Zintl and low-temperature p-SKD TE segments using Cu-Ag braze foils. The segmented leg stack was heated in vacuum under a compressive load to achieve bonding. The novelty of the innovation is the use of composite material that re duces the thermomechanical stresses en - countered in the construction of high-efficiency, high-temperature therm - o-electric devices. The

  4. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements

    International Nuclear Information System (INIS)

    Kim, Seongmin; Janes, David B; Kim, Hwansoo; Ju, Sanghyun

    2013-01-01

    Due to the large surface-to-volume ratio of nanowires, the quality of nanowire–insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current–voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N 2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ∼1.20 × 10 −2 . Upon N 2 plasma treatment with N 2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ∼4.99 × 10 −3 (8.14 × 10 −3 ). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N 2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces. (paper)

  5. Overview Electrotactile Feedback for Enhancing Human Computer Interface

    Science.gov (United States)

    Pamungkas, Daniel S.; Caesarendra, Wahyu

    2018-04-01

    To achieve effective interaction between a human and a computing device or machine, adequate feedback from the computing device or machine is required. Recently, haptic feedback is increasingly being utilised to improve the interactivity of the Human Computer Interface (HCI). Most existing haptic feedback enhancements aim at producing forces or vibrations to enrich the user’s interactive experience. However, these force and/or vibration actuated haptic feedback systems can be bulky and uncomfortable to wear and only capable of delivering a limited amount of information to the user which can limit both their effectiveness and the applications they can be applied to. To address this deficiency, electrotactile feedback is used. This involves delivering haptic sensations to the user by electrically stimulating nerves in the skin via electrodes placed on the surface of the skin. This paper presents a review and explores the capability of electrotactile feedback for HCI applications. In addition, a description of the sensory receptors within the skin for sensing tactile stimulus and electric currents alsoseveral factors which influenced electric signal to transmit to the brain via human skinare explained.

  6. Phase diagram of structure of radial electric field in helical plasmas

    International Nuclear Information System (INIS)

    Toda, S.; Itoh, K.

    2002-01-01

    A set of transport equations in toroidal helical plasmas is analyzed, including the bifurcation of the radial electric field. Multiple solutions of E r for the ambipolar condition induces domains of different electric polarities. A structure of the domain interface is analyzed and a phase diagram is obtained in the space of the external control parameters. The region of the reduction of the anomalous transport is identified. (author)

  7. A physical control interface with proprioceptive feedback and multiple degrees of freedom

    Science.gov (United States)

    Creasey, G. H.; Gow, D.; Sloan, Y.; Meadows, B.

    1991-01-01

    The use of the drug thalidomide by pregnant mothers in Britain resulted in a variety of deformities including the birth of children having no arms. Such children were provided with powered artificial arms with up to five degrees of freedom simultaneously controlled in real time by shoulder movement. The physiological sense of proprioception was extended from the user into the device, reducing the need for visual feedback and conscious control. With the banning of thalidomide, this technique fell into disuse but it is now being re-examined as a control mechanism for other artificial limbs and it may have other medical applications to allow patients to control formerly paralyzed limbs moved by electrical stimulation. It may also have commercial applications in robotic manipulation or physical interaction with virtual environments. To allow it to be investigated further, the original pneumatic control system has recently been converted to an electrical analogue to allow interfacing to electronic and computer-assisted systems. A harness incorporates force-sensitive resistors and linear potentiomenters for sensing position and force at the interface with the skin, and miniature electric motors and lead screws for feeding back to the user the position of the robotic arm and the forces applied to it. In the present system, control is applied to four degrees of freedom using elevation/depression and protraction/reaction of each shoulder so that each collar bone emulates a joystick. However, both electrical and mechanical components have been built in modular form to allow rapid replication and testing of a variety of force and position control strategies.

  8. Electrical modulation and switching of transverse acoustic phonons

    Science.gov (United States)

    Jeong, H.; Jho, Y. D.; Rhim, S. H.; Yee, K. J.; Yoon, S. Y.; Shim, J. P.; Lee, D. S.; Ju, J. W.; Baek, J. H.; Stanton, C. J.

    2016-07-01

    We report on the electrical manipulation of coherent acoustic phonon waves in GaN-based nanoscale piezoelectric heterostructures which are strained both from the pseudomorphic growth at the interfaces as well as through external electric fields. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and usually only longitudinal acoustic phonons are generated by ultrafast displacive screening of potential gradients. We show that even for c -GaN, the combined application of lateral and vertical electric fields can not only switch on the normally forbidden TA mode, but they can also modulate the amplitudes and frequencies of both modes. By comparing the transient differential reflectivity spectra in structures with and without an asymmetric potential distribution, the role of the electrical controllability of phonons was demonstrated as changes to the propagation velocities, the optical birefringence, the electrically polarized TA waves, and the geometrically varying optical sensitivities of phonons.

  9. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)

    International Nuclear Information System (INIS)

    Radaelli, G.; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

    2014-01-01

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures

  10. Effects of the electric field on ion crossover in vanadium redox flow batteries

    International Nuclear Information System (INIS)

    Yang, Xiao-Guang; Ye, Qiang; Cheng, Ping; Zhao, Tim S.

    2015-01-01

    Highlights: • Effects of the electric field on ion crossover and capacity decay in VRFB are studied. • The model enables the Donnan-potential jumps to be captured at electrode/membrane interfaces. • Electric field arises and affects ion crossover even at the open-circuit condition. • Enhancing electric-field-driven crossover can mitigate the capacity decay rate. - Abstract: A thorough understanding of the mechanisms of ion crossover through the membranes in vanadium redox flow batteries (VRFBs) is critically important in making improvements to the battery’s efficiency and cycling performance. In this work, we develop a 2-D VRFB model to investigate the mechanisms of ion crossover and the associated impacts it has on the battery’s performance. Unlike previously described models in the literature that simulated a single cell by dividing it into the positive electrode, membrane, and negative electrode regions, the present model incorporates all possible ion crossover mechanisms in the entire cell without a need to specify any interfacial boundary conditions at the membrane/electrode interfaces, and hence accurately captures the Donnan-potential jumps and steep gradient of species concentrations at the membrane/electrode interfaces. With our model, a particular emphasis is given to investigation of the effect of the electric field on vanadium ion crossover. One of the significant findings is that an electric field exists in the membrane even under the open-circuit condition, primarily due to the presence of the H + concentration gradient across the membrane. This finding suggests that vanadium ions can permeate through the membrane from H + -diluted to H + -concentrated sides via migration and convection. More importantly, it is found that the rate of vanadium ion crossover and capacity decay during charge and discharge vary with the magnitude of the electric field, which is influenced by the membrane properties and operating conditions. The simulations

  11. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  12. Echo signal from rough planar interfaces influence of roughness, angle, range and transducer type

    DEFF Research Database (Denmark)

    Wilhjelm, Jens E.; Pedersen, P.C.; Jacobsen, S.M.

    1998-01-01

    The received electrical signal from a pulse-echo system insonifying a planar acoustical interface was measured for varying degrees of rms roughness (0-0.16 mm), angle of incidence (typically +/-7°) and range to the transducer. A planar and a focused 5 MHz transducer was used. When insonifying...... a smooth interface, the normalized spectrum of the received signals for a planar transducer exhibits an increasing number of nulls with increased angle of insonification, as predicted from numerical modeling while the dependence on insonification angle for the focused transducer was smaller and the null...... pattern was much less distinct. For the planar transducer and for the focused transducer with the interface located at the geometrical point of focus, the energy of the received signal as a function of incident angle was approximately Gaussian with maximum at 0°. For the smooth interface, the -3 dB width...

  13. Electric polarization switching in an atomically thin binary rock salt structure

    Science.gov (United States)

    Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

    2018-01-01

    Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

  14. In situ electron holography of electric potentials inside a solid-state electrolyte: Effect of electric-field leakage

    Energy Technology Data Exchange (ETDEWEB)

    Aizawa, Yuka; Yamamoto, Kazuo; Sato, Takeshi [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Murata, Hidekazu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, Aichi 468-8502 (Japan); Yoshida, Ryuji; Fisher, Craig A.J. [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Kato, Takehisa; Iriyama, Yasutoshi [Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601 (Japan); Hirayama, Tsukasa, E-mail: t-hirayama@jfcc.or.jp [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan)

    2017-07-15

    In situ electron holography is used to observe changes of electric-potential distributions in an amorphous lithium phosphorus oxynitride (LiPON) solid-state electrolyte when different voltages are applied. 2D phase images are simulated by integrating the 3D potential distribution along the electron trajectory through a thin Cu/LiPON/Cu region. Good agreement between experimental and simulated phase distributions is obtained when the influence of the external electric field is taken into account using the 3D boundary-charge method. Based on the precise potential changes, the lithium-ion and lithium-vacancy distributions inside the LiPON layer and electric double layers (EDLs) are inferred. The gradients of the phase drops at the interfaces in relation to EDL widths are discussed. - Highlights: • Solid-state electrolyte LiPON has been observed by in situ electron holography. • Observed phase distributions are compared with those simulated numerically. • 3D electric fields around the specimen are taken into account in the simulation. • Electric-potential distributions inside LiPON have been obtained. • The lithium-ion and lithium-vacancy distributions inside the LiPON are inferred.

  15. Interface Simulation Distances

    Directory of Open Access Journals (Sweden)

    Pavol Černý

    2012-10-01

    Full Text Available The classical (boolean notion of refinement for behavioral interfaces of system components is the alternating refinement preorder. In this paper, we define a distance for interfaces, called interface simulation distance. It makes the alternating refinement preorder quantitative by, intuitively, tolerating errors (while counting them in the alternating simulation game. We show that the interface simulation distance satisfies the triangle inequality, that the distance between two interfaces does not increase under parallel composition with a third interface, and that the distance between two interfaces can be bounded from above and below by distances between abstractions of the two interfaces. We illustrate the framework, and the properties of the distances under composition of interfaces, with two case studies.

  16. Electric characteristics of thin films and gas sensors with varying conductivity: from purely organic materials to nano-composite architectures

    International Nuclear Information System (INIS)

    Pradeau, Jean Paul

    1998-01-01

    This research thesis reports a work which aimed at producing active molecular devices which could be used for gas detection, and which notably display better electric characteristics than existing ones. The author first outlines that these devices present a high sensitivity, and then discusses why they display these reliability problems in terms of electric characteristics. Thus, he studied the influence of the electrode/material interface, and the influence of the material thickness on measured electric characteristics. He highlighted the non negligible influence of a control of physical-chemical properties of the electrode/material interface on the measurement of electric characteristics. Then, in order to solve these problems, the author proposes and reports the study of a mixing, within the same material, of organic molecules (for detection purposes) and metallic particles (for transduction purposes) [fr

  17. Chemical-to-Electricity Carbon: Water Device.

    Science.gov (United States)

    He, Sisi; Zhang, Yueyu; Qiu, Longbin; Zhang, Longsheng; Xie, Yun; Pan, Jian; Chen, Peining; Wang, Bingjie; Xu, Xiaojie; Hu, Yajie; Dinh, Cao Thang; De Luna, Phil; Banis, Mohammad Norouzi; Wang, Zhiqiang; Sham, Tsun-Kong; Gong, Xingao; Zhang, Bo; Peng, Huisheng; Sargent, Edward H

    2018-03-26

    The ability to release, as electrical energy, potential energy stored at the water:carbon interface is attractive, since water is abundant and available. However, many previous reports of such energy converters rely on either flowing water or specially designed ionic aqueous solutions. These requirements restrict practical application, particularly in environments with quiescent water. Here, a carbon-based chemical-to-electricity device that transfers the chemical energy to electrical form when coming into contact with quiescent deionized water is reported. The device is built using carbon nanotube yarns, oxygen content of which is modulated using oxygen plasma-treatment. When immersed in water, the device discharges electricity with a power density that exceeds 700 mW m -2 , one order of magnitude higher than the best previously published result. X-ray absorption and density functional theory studies support a mechanism of operation that relies on the polarization of sp 2 hybridized carbon atoms. The devices are incorporated into a flexible fabric for powering personal electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Electronic structure imperfections and chemical bonding at graphene interfaces

    Science.gov (United States)

    Schultz, Brian Joseph

    The manifestation of novel phenomena upon scaling to finite size has inspired a paradigm shift in materials science that takes advantage of the distinctive electrical and physical properties of nanomaterials. Remarkably, the simple honeycomb arrangement of carbon atoms in a single atomic layer has become renowned for exhibiting never-before-seen electronic and physical phenomena. This archetypal 2-dimensional nanomaterial is known as graphene, a single layer of graphite. Early reports in the 1950's eluded to graphene-like nanostructures that were evidenced from exfoliation of oxidized graphite followed by chemical reduction, absorbed carbon on transition metals, and thermal decomposition of SiC. Furthermore, the earliest tight binding approximation calculations in the 1950's held clues that a single-layer of graphite would behave drastically different than bulk graphite. Not until 2004, when Giem and Novoselov first synthesized graphene by mechanical exfoliation from highly-oriented pyrolytic graphite did the field of graphene-based research bloom within the scientific community. Since 2004, the availability and relatively straight forward synthesis of single-layer graphene (SLG) enabled the observation of remarkable phenomena including: massless Dirac fermions, extremely high mobilities of its charge carriers, room temperature half-integer quantum Hall effect, the Rashba effect, and the potential for ballistic conduction over macroscopic distances. These enticing electronic properties produce the drive to study graphene for use in truly nanoscale electrical interconnects, integrated circuits, transparent conducting electrodes, ultra-high frequency transistors, and spintronic devices, just to name a few. Yet, for almost all real world applications graphene will need to be interfaced with other materials, metals, dielectrics, organics, or any combination thereof that in turn are constituted from various inorganic and organic components. Interfacing graphene, a

  19. Positron Annihilation Ratio Spectroscopy Study of Electric Fields Applied to Positronium at Material Interfaces

    Science.gov (United States)

    2011-03-01

    from 142 ns to a few ns [3:3]. Through the application of positron annihilation lifetime spectroscopy (PALS) on a material, the o-Ps lifetime can be...Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. POSITRON ANNIHILATION RATIO SPECTROSCOPY STUDY OF ELECTRIC FIELDS APPLIED TO...protection in the United States. AFIT/GNE/ENP/11-M19 POSITRON ANNIHILATION RATIO SPECTROSCOPY STUDY OF ELECTRIC FIELDS APPLIED TO POSITRONIUM AT

  20. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Thomsen, E.C.; Henager, C.H., E-mail: chuck.henager@pnnl.gov

    2013-11-15

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R{sub c}) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ∼973 K. The R{sub c}-values behaved similarly for each type of metallic electrode: R{sub c} > ∼1000 Ω cm{sup 2} at RT, decreasing continuously to ∼1–10 Ω cm{sup 2} at 973 K. The temperature dependence of the inverse R{sub c} indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ∼0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  1. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  2. Electrical breakdown of water in microgaps

    International Nuclear Information System (INIS)

    Schoenbach, Karl; Kolb, Juergen; Xiao Shu; Katsuki, Sunao; Minamitani, Yasushi; Joshi, Ravindra

    2008-01-01

    Experimental and modeling studies on electrical breakdown in water in submillimeter gaps between pin and plane electrodes have been performed. Prebreakdown, breakdown and recovery of the water gaps were studied experimentally by using optical and electrical diagnostics with a temporal resolution on the order of one nanosecond. By using Mach-Zehnder interferometry, the electric field distribution in the prebreakdown phase was determined by means of the Kerr effect. Electric fields values in excess of the computed electric fields, which reach >4 MV cm -1 for applied electrical pulses of 20 ns duration, were recorded at the tip of the pin electrode, an effect which can be explained by a reduced permittivity of water at high electric fields. Breakdown of the gaps, streamer-to-arc transition, was recorded by means of high-speed electrical diagnostics, and through high-speed photography. It was shown, through simulations, that breakdown is initiated by field emission at the interface of preexisting microbubbles. Impact ionization within the micro-bubble's gas then contributes to plasma development. Experiments using pulse-probe methods and Schlieren diagnostics allowed us to follow the development of the disturbance caused by the breakdown over a time of more than milliseconds and to determine the recovery time of a water switch. In order to trigger water switches a trigger electrode with a triple point has been utilized. The results of this research have found application in the construction of compact pulse power generators for bioelectric applications.

  3. Cathodoluminescence study of Si/SiO2 interface structure

    International Nuclear Information System (INIS)

    Zamoryarskaya, M.V.; Sokolov, V.I.; Plotnikov, V.

    2004-01-01

    The structure of interface of thermal silicon oxide on p- and n-silicon with different content of activators (boron and phosphorus) was studied by using the method of the local cathodoluminescence (CL). The results of the CL study of the thick silicon oxide layers on silicon show that the content of the defects related with oxygen deficit decreases near the interface. In the same time, new bands in green and red range appear in CL spectra. The CL spectra of the layer with thickness 5-15 nm near interface are analogous to CL spectra of a composite of silicon nanoclusters and silicon oxide. The comparison of CL spectra of silicon oxide grown on p- and n-silicon shows that the film on p-silicon is characterized by higher concentration of silicon-deficit defects and silicon 'islands' near the surface. It may be the cause why the electrical hardness of silicon oxide on p-silicon is lower than the one on n-silicon. The integral electro-physical characteristics of silicon oxide also were measured. The bulk charge and the density of interface states of silicon oxide on p-silicon are higher than for oxide on n-silicon. The oxidization of n-silicon with nanostructure surface leads to the appearance of the CL bands related with oxygen deficit and silicon 'islands' in silicon oxide

  4. Expert System Applications for the Electric Power Industry: Proceedings

    International Nuclear Information System (INIS)

    1992-06-01

    A conference on Expert System Applications for the Electric Power Industry was held in Boston on September 8--11, 1991 to provide a forum for technology transfer, technical information exchange, and education. The conference was attended by more than 150 representatives of electric utilities, equipment manufacturers, engineering consulting organizations, universities, national laboratories, and government agencies. The meeting included a keynote address, 70 papers, and 18 expert system demonstrations. Sessions covered expert systems in power system planning operations, fossil power plant applications, nuclear power plant applications, and intelligent user interfaces. The presentations showed how expert systems can provide immediate benefits to the electric power industry in many applications. Individual papers are indexed separately

  5. Landau levels in biased graphene structures with monolayer-bilayer interfaces

    Science.gov (United States)

    Mirzakhani, M.; Zarenia, M.; Vasilopoulos, P.; Ketabi, S. A.; Peeters, F. M.

    2017-09-01

    The electron energy spectrum in monolayer-bilayer-monolayer and in bilayer-monolayer-bilayer graphene structures is investigated and the effects of a perpendicular magnetic field and electric bias are studied. Different types of monolayer-bilayer interfaces are considered as zigzag (ZZ) or armchair (AC) junctions which modify considerably the bulk Landau levels (LLs) when the spectra are plotted as a function of the center coordinate of the cyclotron orbit. Far away from the two interfaces, one obtains the well-known LLs for extended monolayer or bilayer graphene. The LL structure changes significantly at the two interfaces or junctions where the valley degeneracy is lifted for both types of junctions, especially when the distance between them is approximately equal to the magnetic length. Varying the nonuniform bias and the width of this junction-to-junction region in either structure strongly influence the resulting spectra. Significant differences exist between ZZ and AC junctions in both structures. The densities of states (DOSs) for unbiased structures are symmetric in energy whereas those for biased structures are asymmetric. An external bias creates interface LLs in the gaps between the LLs of the unbiased system in which the DOS can be quite small. Such a pattern of LLs can be probed by scanning tunneling microscopy.

  6. Identifying cochlear implant channels with poor electrode-neuron interfaces: electrically evoked auditory brain stem responses measured with the partial tripolar configuration.

    Science.gov (United States)

    Bierer, Julie Arenberg; Faulkner, Kathleen F; Tremblay, Kelly L

    2011-01-01

    The goal of this study was to compare cochlear implant behavioral measures and electrically evoked auditory brain stem responses (EABRs) obtained with a spatially focused electrode configuration. It has been shown previously that channels with high thresholds, when measured with the tripolar configuration, exhibit relatively broad psychophysical tuning curves. The elevated threshold and degraded spatial/spectral selectivity of such channels are consistent with a poor electrode-neuron interface, defined as suboptimal electrode placement or reduced nerve survival. However, the psychophysical methods required to obtain these data are time intensive and may not be practical during a clinical mapping session, especially for young children. Here, we have extended the previous investigation to determine whether a physiological approach could provide a similar assessment of channel functionality. We hypothesized that, in accordance with the perceptual measures, higher EABR thresholds would correlate with steeper EABR amplitude growth functions, reflecting a degraded electrode-neuron interface. Data were collected from six cochlear implant listeners implanted with the HiRes 90k cochlear implant (Advanced Bionics). Single-channel thresholds and most comfortable listening levels were obtained for stimuli that varied in presumed electrical field size by using the partial tripolar configuration, for which a fraction of current (σ) from a center active electrode returns through two neighboring electrodes and the remainder through a distant indifferent electrode. EABRs were obtained in each subject for the two channels having the highest and lowest tripolar (σ = 1 or 0.9) behavioral threshold. Evoked potentials were measured with both the monopolar (σ = 0) and a more focused partial tripolar (σ ≥ 0.50) configuration. Consistent with previous studies, EABR thresholds were highly and positively correlated with behavioral thresholds obtained with both the monopolar and partial

  7. Behavior of obliquely incident vector Bessel beams at planar interfaces

    KAUST Repository

    Salem, Mohamed; Bagci, Hakan

    2013-01-01

    We investigate the behavior of full-vector electromagnetic Bessel beams obliquely incident at an interface between two electrically different media. We employ a Fourier transform domain representation of Bessel beams to determine their behavior upon reflection and transmission. This transform, which is geometric in nature, consists of elliptical support curves with complex weighting associated with them. The behavior of the scattered field at an interface is highly complex, owing to its full-vector nature; nevertheless, this behavior has a straightforward representation in the transform domain geometry. The analysis shows that the reflected field forms a different vector Bessel beam, but in general, the transmitted field cannot be represented as a Bessel beam. Nevertheless, using this approach, we demonstrate a method to propagate a Bessel beam in the refractive medium by launching a non- Bessel beam at the interface. Several interesting phenomena related to the behavior of Bessel beams are illustrated, such as polarized reflection at Brewster's angle incidence, and the Goos-Hänchen and Imbert-Federov shifts in the case of total reflection. © 2013 Optical Society of America.

  8. Behavior of obliquely incident vector Bessel beams at planar interfaces

    KAUST Repository

    Salem, Mohamed

    2013-01-01

    We investigate the behavior of full-vector electromagnetic Bessel beams obliquely incident at an interface between two electrically different media. We employ a Fourier transform domain representation of Bessel beams to determine their behavior upon reflection and transmission. This transform, which is geometric in nature, consists of elliptical support curves with complex weighting associated with them. The behavior of the scattered field at an interface is highly complex, owing to its full-vector nature; nevertheless, this behavior has a straightforward representation in the transform domain geometry. The analysis shows that the reflected field forms a different vector Bessel beam, but in general, the transmitted field cannot be represented as a Bessel beam. Nevertheless, using this approach, we demonstrate a method to propagate a Bessel beam in the refractive medium by launching a non- Bessel beam at the interface. Several interesting phenomena related to the behavior of Bessel beams are illustrated, such as polarized reflection at Brewster\\'s angle incidence, and the Goos-Hänchen and Imbert-Federov shifts in the case of total reflection. © 2013 Optical Society of America.

  9. Atomic-scale compensation phenomena at polar interfaces.

    Science.gov (United States)

    Chisholm, Matthew F; Luo, Weidong; Oxley, Mark P; Pantelides, Sokrates T; Lee, Ho Nyung

    2010-11-05

    The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.

  10. 77 FR 71288 - Revisions to Electric Quarterly Report Filing Process

    Science.gov (United States)

    2012-11-30

    ... its regulations to change the process for filing Electric Quarterly Reports (EQR). Due to technology... Quarterly Reports (EQR). Due to technology changes that will render the current filing process outmoded... the current EQR software to the web interface minimally disruptive. We direct Commission staff to...

  11. Electric-double-layer potential distribution in multiple-layer immiscible electrolytes

    NARCIS (Netherlands)

    Das, S.; Hardt, Steffen

    2011-01-01

    In this Brief Report, we calculate the electric-double-layer (EDL) electrostatic potential in a system of several layers of immiscible electrolytes. Verwey-Niessen theory predicts that at the interface between two immiscible electrolytes back-to-back EDLs are formed. The present analysis extends

  12. Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

    International Nuclear Information System (INIS)

    Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

    2013-01-01

    Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

  13. Impact of a half-space interface on the wireless link between tiny sensor nodes

    NARCIS (Netherlands)

    Penkin, D.; Janssen, G.; Yarovoy, A.

    2014-01-01

    The power budget of a wireless link between two electrically small sensor nodes located close to an interface between two media is studied. The model includes both the propagation channel losses and input impedance of the radio frequency antennas. It is shown that a highly inductive half-space

  14. Graphene interfaced perovskite solar cells: Role of graphene flake size

    Science.gov (United States)

    Sakorikar, Tushar; Kavitha, M. K.; Tong, Shi Wun; Vayalamkuzhi, Pramitha; Loh, Kian Ping; Jaiswal, Manu

    2018-04-01

    Graphene interfaced inverted planar heterojunction perovskite solar cells are fabricated by facile solution method and studied its potential as hole conducting layer. Reduced graphene oxide (rGO) with small and large flake size and Polyethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS) are utilized as hole conducting layers in different devices. For the solar cell employing PEDOT:PSS as hole conducting layer, 3.8 % photoconversion efficiency is achieved. In case of solar cells fabricated with rGO as hole conducting layer, the efficiency of the device is strongly dependent on flake size. With all other fabrication conditions kept constant, the efficiency of graphene-interfaced solar cell improves by a factor of 6, by changing the flake size of graphene oxide. We attribute this effect to uniform coverage of graphene layer and improved electrical percolation network.

  15. Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

    International Nuclear Information System (INIS)

    Kobayashi, H.; Sakurai, T.; Yamashita, Y.; Kubota, T.; Maida, O.; Takahashi, M.

    2006-01-01

    X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO 2 ) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO 2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 deg. C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells

  16. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Radaelli, G., E-mail: greta.radaelli@gmail.com; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R. [LNESS Center - Dipartimento di Fisica del Politecnico di Milano, Como 22100 (Italy)

    2014-05-07

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

  17. Characterization of the hole transport and electrical properties in poly(9,9-dioctylfluorene)

    International Nuclear Information System (INIS)

    Wang, L.G.; Zhang, H.W.; Tang, X.L.; Song, Y.Q.

    2011-01-01

    A systematic study of the hole transport and electrical properties in blue-emitting polymers as poly(9,9-dioctylfluorene) (PFO) has been performed. We show that the temperature dependent and thickness dependent current density versus voltage characteristics of PFO hole-only devices can be accurately described using our recently introduced improved mobility model based on both the Arrhenius temperature dependence and non-Arrhenius temperature dependence. Within the improved model, the mobility depends on three important physical quantities: temperature, carrier density, and electric field. For the polymer studied, we find the width of the density of states σ=0.115 eV and the lattice constant a=1.2 nm. Furthermore, we show that the boundary carrier density has an important effect on the current density versus voltage characteristics. Too large or too small values of the boundary carrier density lead to incorrect current density versus voltage characteristics. The numerically calculated carrier density is a decreasing function of distance from the interface. The numerically calculated electric field is an increasing function of distance. Both the maximum of carrier density and minimum of electric field appear near the interface.

  18. Electric field effects on the dynamics of bubble detachment from an inclined surface

    International Nuclear Information System (INIS)

    Di Marco, P; Morganti, N; Saccone, G

    2015-01-01

    An experimental apparatus to study bubble detachment from an inclined surface under the action of electric forces is described. It consists of a container filled with FC72 at room temperature and pressure where a train of gas bubbles is injected from an orifice. An electrostatic field can be imposed around the bubble, while the cell can be tilted from 0 to 90°. It is possible to study interface growth with the aid of high-speed cinematography. Since the interface is asymmetrical, a mirror system allowed to acquire, in the same frame, two images at 90° of the bubble. Different inclinations, injection rates and voltages were tested in order to couple the effects of shear gravity and electric field. Curvature and contact angles have been derived with appropriate interpolation methods of the profile. Force balances on the bubble were checked, finding an electric force, which, at first pulls the bubbles from the orifice, then pushes it against the surface. The motion of the center of gravity confirms this behaviour. A power balance has been developed to determine the energy contributions, revealing that surface growth incorporates both the effects of inlet power and electric field. (paper)

  19. Brain-muscle-computer interface: mobile-phone prototype development and testing.

    Science.gov (United States)

    Vernon, Scott; Joshi, Sanjay S

    2011-07-01

    We report prototype development and testing of a new mobile-phone-based brain-muscle-computer interface for severely paralyzed persons, based on previous results from our group showing that humans may actively create specified power levels in two separate frequency bands of a single surface electromyography (sEMG) signal. EMG activity on the surface of a single face muscle site (auricularis superior) is recorded with a standard electrode. This analog electrical signal is imported into an Android-based mobile phone and digitized via an internal A/D converter. The digital signal is split, and then simultaneously filtered with two band-pass filters to extract total power within two separate frequency bands. The user-modulated power in each frequency band serves as two separate control channels for machine control. After signal processing, the Android phone sends commands to external devices via a Bluetooth interface. Users are trained to use the device via visually based operant conditioning, with simple cursor-to-target activities on the phone screen. The mobile-phone prototype interface is formally evaluated on a single advanced Spinal Muscle Atrophy subject, who has successfully used the interface in his home in evaluation trials and for remote control of a television. Development of this new device will not only guide future interface design for community use, but will also serve as an information technology bridge for in situ data collection to quantify human sEMG manipulation abilities for a relevant population.

  20. A bidirectional brain-machine interface algorithm that approximates arbitrary force-fields.

    Directory of Open Access Journals (Sweden)

    Alessandro Vato

    Full Text Available We examine bidirectional brain-machine interfaces that control external devices in a closed loop by decoding motor cortical activity to command the device and by encoding the state of the device by delivering electrical stimuli to sensory areas. Although it is possible to design this artificial sensory-motor interaction while maintaining two independent channels of communication, here we propose a rule that closes the loop between flows of sensory and motor information in a way that approximates a desired dynamical policy expressed as a field of forces acting upon the controlled external device. We previously developed a first implementation of this approach based on linear decoding of neural activity recorded from the motor cortex into a set of forces (a force field applied to a point mass, and on encoding of position of the point mass into patterns of electrical stimuli delivered to somatosensory areas. However, this previous algorithm had the limitation that it only worked in situations when the position-to-force map to be implemented is invertible. Here we overcome this limitation by developing a new non-linear form of the bidirectional interface that can approximate a virtually unlimited family of continuous fields. The new algorithm bases both the encoding of position information and the decoding of motor cortical activity on an explicit map between spike trains and the state space of the device computed with Multi-Dimensional-Scaling. We present a detailed computational analysis of the performance of the interface and a validation of its robustness by using synthetic neural responses in a simulated sensory-motor loop.

  1. Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

    International Nuclear Information System (INIS)

    Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

    2012-01-01

    Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

  2. Microscopic properties of ionic liquid/organic semiconductor interfaces revealed by molecular dynamics simulations.

    Science.gov (United States)

    Yokota, Yasuyuki; Miyamoto, Hiroo; Imanishi, Akihito; Takeya, Jun; Inagaki, Kouji; Morikawa, Yoshitada; Fukui, Ken-Ichi

    2018-05-09

    Electric double-layer transistors based on ionic liquid/organic semiconductor interfaces have been extensively studied during the past decade because of their high carrier densities at low operation voltages. Microscopic structures and the dynamics of ionic liquids likely determine the device performance; however, knowledge of these is limited by a lack of appropriate experimental tools. In this study, we investigated ionic liquid/organic semiconductor interfaces using molecular dynamics to reveal the microscopic properties of ionic liquids. The organic semiconductors include pentacene, rubrene, fullerene, and 7,7,8,8-tetracyanoquinodimethane (TCNQ). While ionic liquids close to the substrate always form the specific layered structures, the surface properties of organic semiconductors drastically alter the ionic dynamics. Ionic liquids at the fullerene interface behave as a two-dimensional ionic crystal because of the energy gain derived from the favorable electrostatic interaction on the corrugated periodic substrate.

  3. Multiscale mechanics of hierarchical structure/property relationships in calcified tissues and tissue/material interfaces

    International Nuclear Information System (INIS)

    Katz, J. Lawrence; Misra, Anil; Spencer, Paulette; Wang, Yong; Bumrerraj, Sauwanan; Nomura, Tsutomu; Eppell, Steven J.; Tabib-Azar, Massood

    2007-01-01

    This paper presents a review plus new data that describes the role hierarchical nanostructural properties play in developing an understanding of the effect of scale on the material properties (chemical, elastic and electrical) of calcified tissues as well as the interfaces that form between such tissues and biomaterials. Both nanostructural and microstructural properties will be considered starting with the size and shape of the apatitic mineralites in both young and mature bovine bone. Microstructural properties for human dentin and cortical and trabecular bone will be considered. These separate sets of data will be combined mathematically to advance the effects of scale on the modeling of these tissues and the tissue/biomaterial interfaces as hierarchical material/structural composites. Interfacial structure and properties to be considered in greatest detail will be that of the dentin/adhesive (d/a) interface, which presents a clear example of examining all three material properties, (chemical, elastic and electrical). In this case, finite element modeling (FEA) was based on the actual measured values of the structure and elastic properties of the materials comprising the d/a interface; this combination provides insight into factors and mechanisms that contribute to premature failure of dental composite fillings. At present, there are more elastic property data obtained by microstructural measurements, especially high frequency ultrasonic wave propagation (UWP) and scanning acoustic microscopy (SAM) techniques. However, atomic force microscopy (AFM) and nanoindentation (NI) of cortical and trabecular bone and the dentin-enamel junction (DEJ) among others have become available allowing correlation of the nanostructural level measurements with those made on the microstructural level

  4. Ion-neutral transport through quadrupole interfaces of mass-spectrometer systems

    International Nuclear Information System (INIS)

    Jugroot, M.; Groth, C.P.T.; Thomson, B.A.; Baranov, V.; Collings, B.A.; French, J.B.

    2004-01-01

    The transport of free ions through highly under-expanded jet flows of neutral gases and in the presence of applied electric fields is investigated by continuum-based numerical simulations. In particular, numerical results are described which are relevant to ion flows occurring in quadrupole interfaces of mass spectrometer systems. A five-moment mathematical model and parallel multi-block numerical solution procedure is developed for predicting the ion transport. The model incorporates the effects of ion-neutral collision processes and is used in conjunction with a Navier-Stokes model and flow solver for the neutral gas to examine the key influences controlling the ion motion. The effects of the neutral gas flow, electric fields (both dc and rf), and flow field geometry on ion mobility are carefully assessed. The capability of controlling the charged particle motions through a combination of directed neutral flow and applied electric field is demonstrated for these high-speed, hypersonic, jet flows. (author)

  5. One-Step UV-Induced Synthesis of Polypyrrole/Ag Nanocomposites at the Water/Ionic Liquid Interface

    Science.gov (United States)

    Wei, Yuyan; Li, Liang; Yang, Xiaoming; Pan, Guoliang; Yan, Guoping; Yu, Xianghua

    2010-02-01

    Polpyrrole (PPy)/Ag nanocomposites were successfully synthesized at the interface of water and ionic liquid by one-step UV-induced polymerization. Highly dispersed PPy/Ag nanoparticles were obtained by controlling the experimental conditions. The results of Fourier-transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy revealed that the UV-induced interface polymerization leaded to the formation of PPy incorporating silver nanoparticles. It was also found that the electrical conductivity of PPy/Ag nanocomposite was about 100 times higher than that of pure PPy.

  6. One-Step UV-Induced Synthesis of Polypyrrole/Ag Nanocomposites at the Water/Ionic Liquid Interface

    Directory of Open Access Journals (Sweden)

    Yang Xiaoming

    2009-01-01

    Full Text Available Abstract Polpyrrole (PPy/Ag nanocomposites were successfully synthesized at the interface of water and ionic liquid by one-step UV-induced polymerization. Highly dispersed PPy/Ag nanoparticles were obtained by controlling the experimental conditions. The results of Fourier-transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy revealed that the UV-induced interface polymerization leaded to the formation of PPy incorporating silver nanoparticles. It was also found that the electrical conductivity of PPy/Ag nanocomposite was about 100 times higher than that of pure PPy.

  7. Advanced Stellar Compass - Adeos II - Interface Control Document

    DEFF Research Database (Denmark)

    Betto, Maurizio; Jørgensen, John Leif; Kilsgaard, Søren

    of Automation of the Technical University of Denmark.The document is structured as follows. First we present the ASC - heritage, system description, performance - then we address more specifically the environmental properties, like the EMC compatibility and thermal characteristics, and the design...... and reliability issues. Section 6 deals with the testing and the calibration procedures and in section 7 the mechanical and electrical interfaces are given. In section 8 and 9 we address issues like manufacturing, transportation and storage, in section 10 the requirements imposed by the ASC on the system...

  8. Wearable Neural Prostheses - Restoration of Sensory-Motor Function by Transcutaneous Electrical Stimulation

    OpenAIRE

    Micera, Silvestro; Keller, Thierry; Lawrence, Marc; Morari, Manfred; Popovic, Dejan B.

    2010-01-01

    In this article, we focus on the least invasive interface: transcutaneous ES (TES), i.e., the use of surface electrodes as an interface between the stimulator and sensory-motor systems. TES is delivered by a burst of short electrical charge pulses applied between pairs of electrodes positioned on the skin. Monophasic or charge-balanced biphasic (symmetric or asymmetric) stimulation pulses can be delivered. The latter ones have the advantage to provide contraction force while minimizing tissue...

  9. Wearable neural prostheses. Restoration of sensory-motor function by transcutaneous electrical stimulation.

    Science.gov (United States)

    Micera, Silvestro; Keller, Thierry; Lawrence, Marc; Morari, Manfred; Popović, Dejan B

    2010-01-01

    In this article, we focus on the least invasive interface: transcutaneous ES (TES), i.e., the use of surface electrodes as an interface between the stimulator and sensory-motor systems. TES is delivered by a burst of short electrical charge pulses applied between pairs of electrodes positioned on the skin. Monophasic or charge-balanced biphasic (symmetric or asymmetric) stimulation pulses can be delivered. The latter ones have the advantage to provide contraction force while minimizing tissue damage.

  10. Design of a 200kW electric powertrain for a high performance electric vehicle

    Directory of Open Access Journals (Sweden)

    Wilmar Martinez

    2016-09-01

    Full Text Available With the purpose of designing the electric powertrain of a high performance electric vehicle capable of running a quarter mile in 10 seconds, firstly it is necessary to calculate the required energy, torque, and power in order to size and select the suitable storage components and electric motors. Secondly, an assessment of the powertrain arrangement is needed to choose the best internal configuration of the vehicle and guarantee the highest efficiency possible. Finally, a design of the power conversion stages, specifically the DC-DC converter that interfaces the storage unit with the electric motors, is required as well. This paper shows the energy calculation procedure based on a longitudinal dynamic model of the vehicle and the selection method of the storage components and motors needed for this application, as well as the design of two 100kW interleaved boost converters with coupled inductors. In addition, a novel operation of the interleaved boost converter is proposed in order to increase the efficiency of the converter. As a result, the designed converter achieved a power density of 24,2kW/kg with an efficiency of 98 %, which was validated by experimental tests of a low power prototype.

  11. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  12. Effect of Au{sup 8+} irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

    Energy Technology Data Exchange (ETDEWEB)

    Shiwakoti, N.; Bobby, A. [Department of Applied Physics, Indian Institute of Technology (ISM) Dhanbad, Jharkhand 826004 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Antony, Bobby, E-mail: bka.ism@gmail.com [Department of Applied Physics, Indian Institute of Technology (ISM) Dhanbad, Jharkhand 826004 (India)

    2017-01-01

    The in-situ capacitance-frequency and conductance-frequency measurements of 100 MeV Au{sup 8+} swift heavy ion irradiated Ni/n-GaP Schottky structure at a constant bias voltage have been carried out in the frequency range 1 kHz–1 MHz at room temperature. The interface states density and the relaxation time of the charge carriers have been calculated from Nicollian and Brews method. Various dielectric parameters such as dielectric constant, dielectric loss, loss tangent, series resistance, ac conductivity, real and imaginary parts of electric modulus have been extracted and analyzed under complex permittivity and complex electric modulus formalisms. The capacitance and conductance characteristics are found to exhibit complex behaviors at lower frequency region (1–20 kHz) for all the samples. The observed peaks and dips at low frequency region are attributed to the relaxation mechanisms of charge carriers and the interface or dipolar polarization at the interface. The dielectric properties are found to be effectively changed by the ion fluence which is attributed to the variation in interface states density and their relaxation time.

  13. Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

    Science.gov (United States)

    El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

    2018-02-01

    In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

  14. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  15. Interface Consistency

    DEFF Research Database (Denmark)

    Staunstrup, Jørgen

    1998-01-01

    This paper proposes that Interface Consistency is an important issue for the development of modular designs. Byproviding a precise specification of component interfaces it becomes possible to check that separately developedcomponents use a common interface in a coherent matter thus avoiding a very...... significant source of design errors. Awide range of interface specifications are possible, the simplest form is a syntactical check of parameter types.However, today it is possible to do more sophisticated forms involving semantic checks....

  16. Resistance switching at the interface of LaAlO3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Zhao, J.L.; Sun, J.R.

    2010-01-01

    At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching ...

  17. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    Science.gov (United States)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  18. Protein adsorption at the electrified air-water interface: implications on foam stability.

    Science.gov (United States)

    Engelhardt, Kathrin; Rumpel, Armin; Walter, Johannes; Dombrowski, Jannika; Kulozik, Ulrich; Braunschweig, Björn; Peukert, Wolfgang

    2012-05-22

    The surface chemistry of ions, water molecules, and proteins as well as their ability to form stable networks in foams can influence and control macroscopic properties such as taste and texture of dairy products considerably. Despite the significant relevance of protein adsorption at liquid interfaces, a molecular level understanding on the arrangement of proteins at interfaces and their interactions has been elusive. Therefore, we have addressed the adsorption of the model protein bovine serum albumin (BSA) at the air-water interface with vibrational sum-frequency generation (SFG) and ellipsometry. SFG provides specific information on the composition and average orientation of molecules at interfaces, while complementary information on the thickness of the adsorbed layer can be obtained with ellipsometry. Adsorption of charged BSA proteins at the water surface leads to an electrified interface, pH dependent charging, and electric field-induced polar ordering of interfacial H(2)O and BSA. Varying the bulk pH of protein solutions changes the intensities of the protein related vibrational bands substantially, while dramatic changes in vibrational bands of interfacial H(2)O are simultaneously observed. These observations have allowed us to determine the isoelectric point of BSA directly at the electrolyte-air interface for the first time. BSA covered air-water interfaces with a pH near the isoelectric point form an amorphous network of possibly agglomerated BSA proteins. Finally, we provide a direct correlation of the molecular structure of BSA interfaces with foam stability and new information on the link between microscopic properties of BSA at water surfaces and macroscopic properties such as the stability of protein foams.

  19. Electronic characterization of LaAlO{sub 3}-SrTiO{sub 3} interfaces by scanning tunneling spectroscopy; Elektronische Charakterisierung von LaAlO{sub 3}-SrTiO{sub 3}-Grenzflaechen mittels Rastertunnelspektroskopie

    Energy Technology Data Exchange (ETDEWEB)

    Breitschaft, Martin

    2010-10-22

    When LaAlO{sub 3} is epitaxially grown on TiO{sub 2}-terminated SrTiO{sub 3}, an electrically conducting interface is generated. In this respect, the physical properties of the interface differ substantially from those of both LaAlO{sub 3} and SrTiO{sub 3}, which are electrically insulating in bulk form. This dissertation looks into the question of the microscopic structure of the conducting two-dimensional interface electron system. Comparing the electronic density of states of LaAlO{sub 3}-SrTiO{sub 3} interfaces measured by scanning tunneling spectroscopy with results of density functional theory, the interface electron system is found to be substantially coined by the hosting transition metal lattices. The comparison yields a detailed picture of the microscopic structure of the interface electron system. (orig.)

  20. Human-system interfaces for the ABWR control room

    International Nuclear Information System (INIS)

    Gutierrez, R.; O'Neil, T.J.

    1993-01-01

    The 1300-MW(electric) advanced boiling water reactor (ABWR) design has been developed by General Electric Co. (G.E.) and its technical associates, Hitachi Ltd. and Toshiba Corporation, under the sponsorship of the Tokyo Electric Power Company. Key features of the ABWR include simplification, improved safety and reliability, reduced occupational exposure and radwaste, improved maneuverability, and reduced construction, fuel, and operating costs. The ABWR incorporates the best proven features from BWR designs in Japan, Europe, and the United States, combined with the broad-scope application of leading-edge technology. The first application of the ABWR design will be at TEP-CO's Kashiwazaki-Kariwa nuclear power station units 6 and 7, which are scheduled to begin commercial operation in 1996 and 1997, respectively. The ABWR is also the lead plant in the U.S. standard plant design certification program. It is scheduled to receive final approval from the U.S. Nuclear Regulatory Commission in early 1994. The development of the human system interaces (HSI) for the ABWR is an extension of the operating experience of existing man-machine interfaces currently being used at GE-designed plants

  1. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  2. Modification of microstructure and electrical conductivity of plasma-sprayed YSZ deposit through post-densification process

    International Nuclear Information System (INIS)

    Ning Xianjin; Li Chengxin; Li Changjiu; Yang Guanjun

    2006-01-01

    4.5 mol% yttria-stabilized zirconia (YSZ) coating was deposited by atmospheric plasma spraying (APS) as an electrolyte for solid oxide fuel cells (SOFCs) applications. The post treatment was employed using zirconium and yttrium nitrate solution infiltration to densify the coating microstructure for improvement of gas permeability. The deposition of YSZ through nitrate in voids of the coating was examined. Microstructure of the as-sprayed and densified coatings was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effect of infiltrating treatment on coating microstructure and electrical conductivity was examined. The electrical conductivity of APS-sprayed YSZ coating at the direction perpendicular to coating surface was much lower than that of bulk materials. Post-densification treatment improved the electrical conductivity of YSZ coating by about 25% compared with as-sprayed coating. It was found that the deposition of YSZ resulting from decomposition of nitrate in the lamellar interface gaps was different from that in vertical cracks in lamella owing to the orthogonal feature of those two types of gaps. The nanopores were formed in the deposited YSZ in nonbonded interface gaps while large pores were residued in vertical cracks in splats. The microstructural examination suggests that nanopores in the deposited YSZ in nonbonded interfaces in the coating were isolated from each other, which led to the significant reduction of gas permeability after densification. Moreover, the nanocontacts between lamellae resulted in high contact resistance and limit improvement of electrical conductivity of the coating after densification

  3. Electrical characteristics of {sup 60}Co {gamma}-ray irradiated MIS Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2006-11-15

    In order to interpret the effect of {sup 60}Co {gamma}-ray irradiation dose on the electrical characteristics of MIS Schottky diodes, they were stressed with a zero bias at 1 MHz in dark and room temperature during {gamma}-ray irradiation and the total dose range was 0-450 kGy. The effect of {gamma}-ray exposure on the electrical characteristics of MIS Schottky diodes has been investigated using C-V and G/{omega}-V measurements at room temperature. Experimental results show that {gamma}-ray irradiation induces a decrease in the barrier height {phi} {sub B} and series resistance R {sub s}, decreasing with increasing dose rate. Also, the acceptor concentration N {sub A} increases with increasing radiation dose. The C-V characteristics prove that there is a reaction for extra recombination centers in case of MIS Schottky diodes exposed to {gamma}-ray radiation. Furthermore, the density of interface states N {sub ss} by Hill-Coleman method increases with increasing radiation dose. Experimental results indicate that the interface-trap formation at high irradiation dose is reduced due to positive charge build-up in the Si/SiO{sub 2} interface (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SiO{sub 2} interface.

  4. ORGANIC ELECTRODE COATINGS FOR NEXT-GENERATION NEURAL INTERFACES

    Directory of Open Access Journals (Sweden)

    Ulises A Aregueta-Robles

    2014-05-01

    Full Text Available Traditional neuronal interfaces utilize metallic electrodes which in recent years have reached a plateau in terms of the ability to provide safe stimulation at high resolution or rather with high densities of microelectrodes with improved spatial selectivity. To achieve higher resolution it has become clear that reducing the size of electrodes is required to enable higher electrode counts from the implant device. The limitations of interfacing electrodes including low charge injection limits, mechanical mismatch and foreign body response can be addressed through the use of organic electrode coatings which typically provide a softer, more roughened surface to enable both improved charge transfer and lower mechanical mismatch with neural tissue. Coating electrodes with conductive polymers or carbon nanotubes offers a substantial increase in charge transfer area compared to conventional platinum electrodes. These organic conductors provide safe electrical stimulation of tissue while avoiding undesirable chemical reactions and cell damage. However, the mechanical properties of conductive polymers are not ideal, as they are quite brittle. Hydrogel polymers present a versatile coating option for electrodes as they can be chemically modified to provide a soft and conductive scaffold. However, the in vivo chronic inflammatory response of these conductive hydrogels remains unknown. A more recent approach proposes tissue engineering the electrode interface through the use of encapsulated neurons within hydrogel coatings. This approach may provide a method for activating tissue at the cellular scale, however several technological challenges must be addressed to demonstrate feasibility of this innovative idea. The review focuses on the various organic coatings which have been investigated to improve neural interface electrodes.

  5. Personal computer interface for temmperature measuring in the cutting process with turning

    International Nuclear Information System (INIS)

    Trajchevski, Neven; Filipovski, Velimir; Kuzinonovski, Mikolaj

    2004-01-01

    The computer development aided reserch systems in the investigations of the characteristics of the surface layar forms conditions for decreasing of the measuring uncertainty. Especially important is the fact that the usage of open and self made measuring systems accomplishes the demands for a total control of the research process. This paper describes an original personal computer interface which is used in the newly built computer aided reserrch system for temperatute measuring in the machining with turning. This interface consists of optically-coupled linear isolation amplifier and an analog to digital (A/D) converter. It is designed for measuring of the themo- voltage that is a generated from the natural thermocouple workpiece-cutting tool. That is achived by digitalizing the value of the thermo-voltage in data which is transmitted to the personal computer. The interface realization is a result of the research activity of the faculty of Mechanical Engineering and the Faculty of Electrical Engineering in Skopje.

  6. Manipulation of red blood cells with electric field

    Science.gov (United States)

    Saboonchi, Hossain; Esmaeeli, Asghar

    2009-11-01

    Manipulation of bioparticles and macromolecules is the central task in many biological and biotechnological processes. The current methods for physical manipulation takes advantage of different forces such as acoustic, centrifugal, magnetic, electromagnetic, and electric forces, as well as using optical tweezers or filtration. Among all these methods, however, the electrical forces are particularly attractive because of their favorable scale up with the system size which makes them well-suited for miniaturization. Currently the electric field is used for transportation, poration, fusion, rotation, and separation of biological cells. The aim of the current research is to gain fundamental understanding of the effect of electric field on the human red blood cells (RBCs) using direct numerical simulation. A front tracking/finite difference technique is used to solve the fluid flow and electric field equations, where the fluid in the cell and the blood (plasma) is modeled as Newtonian and incompressible, and the interface separating the two is treated as an elastic membrane. The behavior of RBCs is investigated as a function of the controlling parameters of the problem such as the strength of the electric field.

  7. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  8. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  9. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  10. Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy

    Science.gov (United States)

    Liao, M.-H.; Chen, C.-H.

    2013-04-01

    The Positron Annihilation Spectra (PAS), Raman, and Photoluminescence spectroscopy reveal that Si0.5Ge0.5/Si interface quality can be significantly improved by the low energy plasma cleaning process using hydrogen. In the PAS, the particularly small value of lifetime and intensity near the Si0.5Ge0.5/Si interface in the sample with the treatment indicate that the defect concentration is successfully reduced 2.25 times, respectively. Fewer defects existed in the Si0.5Ge0.5/Si interface result in the high compressive strain about 0.36% in the top epi-Si0.5Ge0.5 layer, which can be observed in Raman spectra and stronger radiative recombination rate about 1.39 times for the infrared emission, which can be observed in the photoluminescence spectra. With better Si0.5Ge0.5/Si interface quality, the SiGe-based devices can have better optical and electrical characteristics for more applications in the industry. The PAS is also demonstrated that it is the useful methodology tool to quantify the defect information in the SiGe-based material.

  11. Testing of Environmental Satellite Bus-Instrument Interfaces Using Engineering Models

    Science.gov (United States)

    Gagnier, Donald; Hayner, Rick; Nosek, Thomas; Roza, Michael; Hendershot, James E.; Razzaghi, Andrea I.

    2004-01-01

    This paper discusses the formulation and execution of a laboratory test of the electrical interfaces between multiple atmospheric scientific instruments and the spacecraft bus that carries them. The testing, performed in 2002, used engineering models of the instruments and the Aura spacecraft bus electronics. Aura is one of NASA s Earth Observatory System missions. The test was designed to evaluate the complex interfaces in the command and data handling subsystems prior to integration of the complete flight instruments on the spacecraft. A problem discovered during the flight integration phase of the observatory can cause significant cost and schedule impacts. The tests successfully revealed problems and led to their resolution before the full-up integration phase, saving significant cost and schedule. This approach could be beneficial for future environmental satellite programs involving the integration of multiple, complex scientific instruments onto a spacecraft bus.

  12. A first-principles study of As doping at a disordered Si-SiO2 interface.

    Science.gov (United States)

    Corsetti, Fabiano; Mostofi, Arash A

    2014-02-05

    Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxide. Using a realistic model of the disordered interface, we find that a small percentage (on the order of ∼10%) of the atomic sites in the first few monolayers on the silicon side of the interface are energetically favourable for segregation, and that this is controlled by the local bonding and local strain of the defect centre. We also find that there is a long-range quantum confinement effect due to the interface, which results in an energy barrier for dopant segregation, but that this barrier is small in comparison to the effect of the local environment. Finally, we consider the extent to which the energetics of segregation can be controlled by the application of strain to the interface.

  13. Characterization of intermetallic compounds in Cu-Al ball bonds: thermo-mechanical properties, interface delamination and corrosion

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Kouters, M.H.M.; Dos Santos Ferreira, O.

    2012-01-01

    In high power automotive electronics copper wire bonding is regarded as the most promising alternative for gold wire bonding in 1st level interconnects. In the Cu-Al ball bond interface the growth of intermetallic compounds can deteriorate the electrical and mechanical properties of the

  14. Transition metal oxide as anode interface buffer for impedance spectroscopy

    Science.gov (United States)

    Xu, Hui; Tang, Chao; Wang, Xu-Liang; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Pang, Zong-Qiang; Jiang, Bing; Fan, Qu-Li; Huang, Wei

    2015-12-01

    Impedance spectroscopy is a strong method in electric measurement, which also shows powerful function in research of carrier dynamics in organic semiconductors when suitable mathematical physical models are used. Apart from this, another requirement is that the contact interface between the electrode and materials should at least be quasi-ohmic contact. So in this report, three different transitional metal oxides, V2O5, MoO3 and WO3 were used as hole injection buffer for interface of ITO/NPB. Through the impedance spectroscopy and PSO algorithm, the carrier mobilities and I-V characteristics of the NPB in different devices were measured. Then the data curves were compared with the single layer device without the interface layer in order to investigate the influence of transitional metal oxides on the carrier mobility. The careful research showed that when the work function (WF) of the buffer material was just between the work function of anode and the HOMO of the organic material, such interface material could work as a good bridge for carrier injection. Under such condition, the carrier mobility measured through impedance spectroscopy should be close to the intrinsic value. Considering that the HOMO (or LUMO) of most organic semiconductors did not match with the work function of the electrode, this report also provides a method for wide application of impedance spectroscopy to the research of carrier dynamics.

  15. ESR hollows molten metal/slag interface detection

    International Nuclear Information System (INIS)

    Harris, B.; Klein, H.J.

    1983-01-01

    A system for detecting the location of a molten metal/slag interface during the casting of electroslag remelted hollows includes a gamma ray radiation source and a scintillation counter. The source and counter reside outside the casting mould and are held in fixed spatial relationships with respect to one another and with respect to the mandrel. The radiation from the source is directed chordally through the mould and through the annular casting zone, defined between the sidewalls of the upwardly driven mandrel and the mould without contacting said mandrel. The counter provides an electrical signal responsive to the rate of radiation events detected thereby. (author)

  16. Fast electric control of the droplet size in a microfluidic T-junction droplet generator

    Science.gov (United States)

    Shojaeian, Mostafa; Hardt, Steffen

    2018-05-01

    The effect of DC electric fields on the generation of droplets of water and xanthan gum solutions in sunflower oil at a microfluidic T-junction is experimentally studied. The electric field leads to a significant reduction of the droplet diameter, by about a factor of 2 in the case of water droplets. The droplet size can be tuned by varying the electric field strength, an effect that can be employed to produce a stream of droplets with a tailor-made size sequence. Compared to the case of purely hydrodynamic droplet production without electric fields, the electric control has about the same effect on the droplet size if the electric stress at the liquid/liquid interface is the same as the hydrodynamic stress.

  17. Interface models

    DEFF Research Database (Denmark)

    Ravn, Anders P.; Staunstrup, Jørgen

    1994-01-01

    This paper proposes a model for specifying interfaces between concurrently executing modules of a computing system. The model does not prescribe a particular type of communication protocol and is aimed at describing interfaces between both software and hardware modules or a combination of the two....... The model describes both functional and timing properties of an interface...

  18. Description of corrections on electrode polarization impedance using isopotential interface factor

    Directory of Open Access Journals (Sweden)

    John Alexander Gomez Sanchez

    2012-08-01

    Full Text Available In this paper, we propose an equation and define the Isopotential Interface Factor (IIF to quantify the contribution of electrode polarization impedance in two tetrapolar electrode shapes. The first tetrapolar electrode geometry shape was adjacent and the second axial concentric, both probes were made of stainless steel (AISI 304. The experiments were carried out with an impedance analyzer (Solartron 1260 using a frequency range between 0.1 Hz and 8 MHz. Based on a theoretical simplification, the experimental results show a lower value of the IIF in the axial concentric tetrapolar electrode system which caused a lower correction of interface value. The higher value of the IIF in the adjacent electrode system was KEEI (1Hz, 0.28 mS/cm = 1.41 and decreased when the frequency and conductance were increased, whereas in the axial concentric electrode system was KEEI (1Hz, 0.28 mS/cm = 0.08. The average isopotential interface factor throughout the whole range of conductivities and frequencies was 0.23 in the adjacent electrode system and 0.02 in the axial concentric electrode system. The index of inherent electrical anisotropy (IEA was used to present an analysis of electrical anisotropy of biceps brachii muscle in vitro using the corrections of both tetrapolar electrode systems. A higher IEA was present in lower frequency where the variation below 1 kHz was 15 % in adjacent electrode configuration and 26 % in the axial concentric probe with respect to full range. The IIF is then shown that it can be used to describe the quality of an electrode system.

  19. Transmission rights and market power on electric power networks. 2. Physical rights

    International Nuclear Information System (INIS)

    Joskow, Paul; Tirole, Jean

    1999-01-01

    This discussion paper examines physical transmission rights where the capacity of each potentially congested interface is defined and the rights to use the congested interfaces are created and allocated in some way for suppliers and consumers. The way in which the allocation of physical rights affects competition or increases the buyers or sellers market power in the power generation market when a transmission interface is congested, and how rights markets with different microstructures allocate physical rights and determine rights prices are explored. An electricity market with physical transmission rights in the absence of capacity release rules, and physical transmission rights and market power are addressed. Loop flows, and capacity release rules are discussed. (UK)

  20. Electrical characteristics of Li(Ni7/10Fe3/10)VO4 ceramics

    International Nuclear Information System (INIS)

    Ram, Moti

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → The compound [Li(Ni 7/10 Fe 3/10 )VO 4 ] was synthesized by a solution-based chemical method. → Structural, microstructural and electrical properties are studied using X-ray diffraction, field emission scanning electron microscopy and complex impedance spectroscopy techniques, respectively. → Electrical conductivity study indicates that electrical conduction in the material is a thermally activated process. - Abstract: The compound [Li(Ni 7/10 Fe 3/10 )VO 4 ] was produced by a solution-based chemical route whose electrical properties were investigated using complex impedance spectroscopy technique. X-ray diffraction study reveals an orthorhombic unit cell structure of the compound. Complex electrical impedance analysis exhibits: (i) grain interior, grain boundary and electrode-material interface contributions to electrical response and (ii) the presence of temperature dependent electrical relaxation phenomena in the material. Electrical conductivity study indicates that electrical conduction in the material is a thermally activated process.

  1. Vertically oriented graphene bridging active-layer/current-collector interface for ultrahigh rate supercapacitors.

    Science.gov (United States)

    Bo, Zheng; Zhu, Weiguang; Ma, Wei; Wen, Zhenhai; Shuai, Xiaorui; Chen, Junhong; Yan, Jianhua; Wang, Zhihua; Cen, Kefa; Feng, Xinliang

    2013-10-25

    Dense networks of graphene nanosheets standing vertically on a current collector can work as numerous electrically conductive bridges to facilitate charge transport and mitigate the constriction/spreading resistance at the interface between the active material and the current collector. The vertically oriented graphene-bridged supercapacitors present excellent rate and power capabilities. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Soft, curved electrode systems capable of integration on the auricle as a persistent brain–computer interface

    Science.gov (United States)

    Norton, James J. S.; Lee, Dong Sup; Lee, Jung Woo; Lee, Woosik; Kwon, Ohjin; Won, Phillip; Jung, Sung-Young; Cheng, Huanyu; Jeong, Jae-Woong; Akce, Abdullah; Umunna, Stephen; Na, Ilyoun; Kwon, Yong Ho; Wang, Xiao-Qi; Liu, ZhuangJian; Paik, Ungyu; Huang, Yonggang; Bretl, Timothy; Yeo, Woon-Hong; Rogers, John A.

    2015-01-01

    Recent advances in electrodes for noninvasive recording of electroencephalograms expand opportunities collecting such data for diagnosis of neurological disorders and brain–computer interfaces. Existing technologies, however, cannot be used effectively in continuous, uninterrupted modes for more than a few days due to irritation and irreversible degradation in the electrical and mechanical properties of the skin interface. Here we introduce a soft, foldable collection of electrodes in open, fractal mesh geometries that can mount directly and chronically on the complex surface topology of the auricle and the mastoid, to provide high-fidelity and long-term capture of electroencephalograms in ways that avoid any significant thermal, electrical, or mechanical loading of the skin. Experimental and computational studies establish the fundamental aspects of the bending and stretching mechanics that enable this type of intimate integration on the highly irregular and textured surfaces of the auricle. Cell level tests and thermal imaging studies establish the biocompatibility and wearability of such systems, with examples of high-quality measurements over periods of 2 wk with devices that remain mounted throughout daily activities including vigorous exercise, swimming, sleeping, and bathing. Demonstrations include a text speller with a steady-state visually evoked potential-based brain–computer interface and elicitation of an event-related potential (P300 wave). PMID:25775550

  3. Soft, curved electrode systems capable of integration on the auricle as a persistent brain-computer interface.

    Science.gov (United States)

    Norton, James J S; Lee, Dong Sup; Lee, Jung Woo; Lee, Woosik; Kwon, Ohjin; Won, Phillip; Jung, Sung-Young; Cheng, Huanyu; Jeong, Jae-Woong; Akce, Abdullah; Umunna, Stephen; Na, Ilyoun; Kwon, Yong Ho; Wang, Xiao-Qi; Liu, ZhuangJian; Paik, Ungyu; Huang, Yonggang; Bretl, Timothy; Yeo, Woon-Hong; Rogers, John A

    2015-03-31

    Recent advances in electrodes for noninvasive recording of electroencephalograms expand opportunities collecting such data for diagnosis of neurological disorders and brain-computer interfaces. Existing technologies, however, cannot be used effectively in continuous, uninterrupted modes for more than a few days due to irritation and irreversible degradation in the electrical and mechanical properties of the skin interface. Here we introduce a soft, foldable collection of electrodes in open, fractal mesh geometries that can mount directly and chronically on the complex surface topology of the auricle and the mastoid, to provide high-fidelity and long-term capture of electroencephalograms in ways that avoid any significant thermal, electrical, or mechanical loading of the skin. Experimental and computational studies establish the fundamental aspects of the bending and stretching mechanics that enable this type of intimate integration on the highly irregular and textured surfaces of the auricle. Cell level tests and thermal imaging studies establish the biocompatibility and wearability of such systems, with examples of high-quality measurements over periods of 2 wk with devices that remain mounted throughout daily activities including vigorous exercise, swimming, sleeping, and bathing. Demonstrations include a text speller with a steady-state visually evoked potential-based brain-computer interface and elicitation of an event-related potential (P300 wave).

  4. Shape-changing interfaces:

    DEFF Research Database (Denmark)

    Rasmussen, Majken Kirkegård; Pedersen, Esben Warming; Petersen, Marianne Graves

    2015-01-01

    Shape change is increasingly used in physical user interfaces, both as input and output. Yet, the progress made and the key research questions for shape-changing interfaces are rarely analyzed systematically. We review a sample of existing work on shape-changing interfaces to address these shortc......Shape change is increasingly used in physical user interfaces, both as input and output. Yet, the progress made and the key research questions for shape-changing interfaces are rarely analyzed systematically. We review a sample of existing work on shape-changing interfaces to address...... these shortcomings. We identify eight types of shape that are transformed in various ways to serve both functional and hedonic design purposes. Interaction with shape-changing interfaces is simple and rarely merges input and output. Three questions are discussed based on the review: (a) which design purposes may...

  5. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  6. Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

    Science.gov (United States)

    Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

    2018-05-01

    The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

  7. Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

    International Nuclear Information System (INIS)

    Gang, Du; Xiao-Yan, Liu; Zhi-Liang, Xia; Jing-Feng, Yang; Ru-Qi, Han

    2010-01-01

    Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Engineering magnetism at functional oxides interfaces: manganites and beyond.

    Science.gov (United States)

    Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

    2017-11-08

    The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

  9. Experimental and theoretical exploration of mechanical stability of Pt/NbO2 interfaces for thermoelectric applications

    International Nuclear Information System (INIS)

    Music, Denis; Schmidt, Paul; Saksena, Aparna

    2017-01-01

    Mechanical stability criteria for metallic contacts, namely a minimised thermal stress and an enhanced interfacial strength, have been appraised for sputtered, x-ray amorphous NbO 2 thermoelectric thin films in contact with a polycrystalline Pt electrode utilising experimental and theoretical methods. Thermal stress built at these Pt/NbO 2 interfaces with approximately 50 MPa is minute even at 800 °C, the maximum operation temperature. There are no coordination changes of Pt and its metallic character is only marginally altered upon the interface formation. In addition, Nb–O bonds at the interface sustain their covalent-ionic dioxide bonding nature. Hence, even though there are no considerable modifications in the electronic structure of the individual components at these interfaces, Pt/NbO 2 interfacial bonds of metallic and partly covalent character are strong with a work of separation reaching 2 J m −2 . Based on the synergic experimental and theoretical results, it is therefore expected that these interfaces are mechanically stable during operation of these thermoelectric devices. This strategy is of general importance for designing mechanically stable electrical contacts. (paper)

  10. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

    International Nuclear Information System (INIS)

    Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

    2008-01-01

    We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

  11. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

    OpenAIRE

    Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

    2015-01-01

    We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is ...

  12. Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Pei, D.; Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Lin, Y.-H.; Fung, H.-S.; Chen, C.-C. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-12-07

    The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV.

  13. An Exploration into Framing Effects and Information Preferences: Implications for the Design of Energy Feedback Interfaces

    Science.gov (United States)

    Taylor-Brown, Peter

    A recent topic in the energy industry involves developing strategies to reduce the necessary peak production capacity of our future electricity infrastructure. One of these strategies is promoting behavioral change among individual energy consumers. An inherent problem with electricity consumption is that electricity is invisible, intangible, and abstract. Interfaces that provide people with useful feedback on their usage can help with understanding and reduction of consumption. These interfaces intend to empower individuals with ability to adopt less wasteful energy consumption behaviors. Skillful HCI design will include attention to informational preferences, and framing effects due to presentation choices. An online questionnaire was utilized to explore this domain, and the results identified design requirements for a home feedback interface. The final dataset contained responses from 36 male and 49 female United States residents. Cost () was perceived as the most useful metric and kW as the least useful. Respondent preference was expressed for lower levels of automation, which was not attributable to distrust of automation. Further, a test of framings effects showed a higher likelihood to change behavior to save 100 dollars per year than 2 per week (U=1248.5, p=0.001). A feedback interface design based on the questionnaire results was used in the second phase of the research. A 2x2x2 factorial design compared the effects of goal-type (specific vs. open-ended), metric-use ( vs. kWh), and visualization (graphical vs. text-only) on user experience, learning and behavior during a consumption reduction task. Results showed that goal-type affects the amount of diagnostic behavior conducted by participants (U=351.0, p=0.001). Goal-type and metric-use independently affect participant belief that they could reduce their consumption in their real home with the same feedback shown in the task, F(df=1,39)=24.77, p=0.001; F(df=1,39)=5.55, p=0.05. In addition, visualization

  14. Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator

    International Nuclear Information System (INIS)

    Jin, Hyun Soo; Cho, Young Jin; Lee, Sang-Moon; Kim, Dae Hyun; Kim, Dae Woong; Lee, Dongsoo; Park, Jong-Bong; Won, Jeong Yeon; Lee, Myoung-Jae; Cho, Seong-Ho; Hwang, Cheol Seong; Park, Tae Joo

    2014-01-01

    Highlights: • ALD Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. • Interface sulfur passivation was performed with wet processing using (NH 4 ) 2 S solution, and dry processing using post-deposition annealing under a H 2 S atmosphere. • Electrical properties of the device were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. • PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. - Abstract: Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices

  15. Electrical Characterization of 3D Au Microelectrodes for Use in Retinal Prostheses.

    Science.gov (United States)

    Lee, Sangmin; Ahn, Jae Hyun; Seo, Jong-Mo; Chung, Hum; Cho, Dong-Il Dan

    2015-06-17

    In order to provide high-quality visual information to patients who have implanted retinal prosthetic devices, the number of microelectrodes should be large. As the number of microelectrodes is increased, the dimensions of each microelectrode must be decreased, which in turn results in an increased microelectrode interface impedance and decreased injection current dynamic range. In order to improve the trade-off envelope between the number of microelectrodes and the current injection characteristics, a 3D microelectrode structure can be used as an alternative. In this paper, the electrical characteristics of 2D and 3D Au microelectrodes were investigated. In order to examine the effects of the structural difference, 2D and 3D Au microelectrodes with different base areas but similar effective surface areas were fabricated and evaluated. Interface impedances were measured and similar dynamic ranges were obtained for both 2D and 3D Au microelectrodes. These results indicate that more electrodes can be implemented in the same area if 3D designs are used. Furthermore, the 3D Au microelectrodes showed substantially enhanced electrical durability characteristics against over-injected stimulation currents, withstanding electrical currents that are much larger than the limit measured for 2D microelectrodes of similar area. This enhanced electrical durability property of 3D Au microelectrodes is a new finding in microelectrode research, and makes 3D microelectrodes very desirable devices.

  16. Electrical Characterization of 3D Au Microelectrodes for Use in Retinal Prostheses

    Directory of Open Access Journals (Sweden)

    Sangmin Lee

    2015-06-01

    Full Text Available In order to provide high-quality visual information to patients who have implanted retinal prosthetic devices, the number of microelectrodes should be large. As the number of microelectrodes is increased, the dimensions of each microelectrode must be decreased, which in turn results in an increased microelectrode interface impedance and decreased injection current dynamic range. In order to improve the trade-off envelope between the number of microelectrodes and the current injection characteristics, a 3D microelectrode structure can be used as an alternative. In this paper, the electrical characteristics of 2D and 3D Au microelectrodes were investigated. In order to examine the effects of the structural difference, 2D and 3D Au microelectrodes with different base areas but similar effective surface areas were fabricated and evaluated. Interface impedances were measured and similar dynamic ranges were obtained for both 2D and 3D Au microelectrodes. These results indicate that more electrodes can be implemented in the same area if 3D designs are used. Furthermore, the 3D Au microelectrodes showed substantially enhanced electrical durability characteristics against over-injected stimulation currents, withstanding electrical currents that are much larger than the limit measured for 2D microelectrodes of similar area. This enhanced electrical durability property of 3D Au microelectrodes is a new finding in microelectrode research, and makes 3D microelectrodes very desirable devices.

  17. Effect of the nanofilm thickness on the properties of the two-dimensional electron gas at the interface between two dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Gadiev, R. M., E-mail: gadiev.radik@gmail.com; Lachinov, A. N. [M. Akmullah Baskir State Pedagogical University (Russian Federation); Karamov, D. D. [Russian Academy of Sciences, Ufa Scientific Center (Russian Federation); Kiselev, D. A. [National University of Science and Technology MISiS (Russian Federation); Kornilov, V. M. [M. Akmullah Baskir State Pedagogical University (Russian Federation)

    2016-07-15

    The mechanism of formation of the two-dimensional conductivity along the interface between two polymer dielectrics is experimentally studied. The idea of “polar catastrophe,” which was successfully used earlier to explain the electronic properties of the interface between two perovskites LaAlO{sub 3}/SrTiO{sub 3}, is chosen as a base hypothesis. Piezoelectric response microscopy is used to reveal the presence of spontaneous polarization on the surface of a polymer film, and the remanent polarization is found to decrease with increasing film thickness. As in the case of perovskites, the polymer film thickness is found to strongly affect the electrical conductivity along the interface. Substantial differences between these phenomena are detected. The change in the electrical conductivity is shown to be caused by a significant increase in the charge carrier mobility when the film thickness decreases below a certain critical value. The relation between the change in the carrier mobility and the change in the spontaneous surface polarization of the polymer film when its thickness decreases is discussed.

  18. Electrical insulator assembly with oxygen permeation barrier

    Science.gov (United States)

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  19. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    International Nuclear Information System (INIS)

    Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

    2017-01-01

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  20. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2017-07-15

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  1. Water at Interfaces.

    Science.gov (United States)

    Björneholm, Olle; Hansen, Martin H; Hodgson, Andrew; Liu, Li-Min; Limmer, David T; Michaelides, Angelos; Pedevilla, Philipp; Rossmeisl, Jan; Shen, Huaze; Tocci, Gabriele; Tyrode, Eric; Walz, Marie-Madeleine; Werner, Josephina; Bluhm, Hendrik

    2016-07-13

    The interfaces of neat water and aqueous solutions play a prominent role in many technological processes and in the environment. Examples of aqueous interfaces are ultrathin water films that cover most hydrophilic surfaces under ambient relative humidities, the liquid/solid interface which drives many electrochemical reactions, and the liquid/vapor interface, which governs the uptake and release of trace gases by the oceans and cloud droplets. In this article we review some of the recent experimental and theoretical advances in our knowledge of the properties of aqueous interfaces and discuss open questions and gaps in our understanding.

  2. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    International Nuclear Information System (INIS)

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-01-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface–immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices

  3. User interface support

    Science.gov (United States)

    Lewis, Clayton; Wilde, Nick

    1989-01-01

    Space construction will require heavy investment in the development of a wide variety of user interfaces for the computer-based tools that will be involved at every stage of construction operations. Using today's technology, user interface development is very expensive for two reasons: (1) specialized and scarce programming skills are required to implement the necessary graphical representations and complex control regimes for high-quality interfaces; (2) iteration on prototypes is required to meet user and task requirements, since these are difficult to anticipate with current (and foreseeable) design knowledge. We are attacking this problem by building a user interface development tool based on extensions to the spreadsheet model of computation. The tool provides high-level support for graphical user interfaces and permits dynamic modification of interfaces, without requiring conventional programming concepts and skills.

  4. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Xu, Can; Feldman, Leonard C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Bloch, Joseph [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); NRCN, Beer-Sheva 84190 (Israel); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  5. Modeling and simulation of the feedwater system, associated controller and interface with the user for the SUN-RAH nucleo electric plants university student simulator

    International Nuclear Information System (INIS)

    Sanchez B, A.

    2003-01-01

    The simulation process of the component systems of the feedwater of a nucleo electric plant is presented, using several models of reduced order that represent the diverse elements that compose the systems like: the heaters of feedwater, the condenser, the feedwater pump, etc. The integration of the same ones in one simulative structure, and the development of a platform that to give the appearance of to be executed in continuous time, it is the objective of the feedwater simulator, as well as of the SUN-RAH simulator, of which is part. The simulator uses models of reduced order that respond to the observed behavior of a nuclear plant of BWR type. Likewise, it is presented a model of a flow controller of feedwater that will be the one in charge of regulating the demand of the system according to the characteristics and criticize restrictions of safety and controllability, assigned according to those wanted parameters of performance of this system inside the nucleo electric plant. The integration of these models, the adaptation of the variables and parameters, are presented in a way that the integration with the other ones models of the remaining systems of the plant (reactor, steam lines, turbine, etc.), be direct and coherent with the principles of thermodynamic cycles relative to this type of generation plants. The design of those graphic interfaces and the environment where the simulator works its are part of those developments of this work. The reaches and objectives of the simulator complement the description of the simulator. (Author)

  6. Effects of conducting oxide barrier layers on the stability of Crofer® 22 APU/Ca3Co4O9 interfaces

    DEFF Research Database (Denmark)

    Holgate, Tim C.; Han, Li; Wu, NingYu

    2014-01-01

    Practical implementation of oxide thermoelectrics on an industrial or commercial scale for waste heat energy conversion requires the development of chemically stable interfaces between metal interconnects and oxide thermoelements that exhibit low electrical contact resistances. A commercially...... available high-chrome iron alloy (i.e., Crofer® 22 APU) serving as the interconnect metal was spray coated with LaNi0.6Fe0.4O3 (LNFO) or (Mn,Co)3O4 spinel and then interfaced with a p-type thermoelectric material—calcium cobaltate (Ca3Co4O9)—using spark plasma sintering. The interfaces have been...

  7. Theoretical Foundation for Electric-Dipole-Allowed Chiral-Specific Fluorescence Optical Rotary Dispersion (F-ORD) from Interfacial Assemblies.

    Science.gov (United States)

    Deng, Fengyuan; Ulcickas, James R W; Simpson, Garth J

    2016-11-03

    Fluorescence optical rotary dispersion (F-ORD) is proposed as a novel chiral-specific and interface-specific spectroscopic method. F-ORD measurements of uniaxial assemblies are predicted to be fully electric-dipole-allowed, with corresponding increases in sensitivity to chirality relative to chiral-specific measurements in isotropic assemblies that are commonly interpreted through coupling between electric and magnetic dynamic dipoles. Observations of strong chiral sensitivity in prior single-molecule fluorescence measurements of chiral interfacial molecules are in excellent qualitative agreement with the predictions of the F-ORD mechanism and challenging to otherwise explain. F-ORD may provide methods to suppress background fluorescence in studies of biological interfaces, as the detected signal requires both polar local order and interfacial chirality. In addition, the molecular-level descriptions of the mechanisms underpinning F-ORD may also potentially apply to aid in interpreting chiral-specific Raman and surface-enhanced Raman spectroscopy measurements of uniaxially oriented assemblies, opening up opportunities for chiral-specific and interface-specific vibrational spectroscopy.

  8. Garbage collector interface

    OpenAIRE

    Ive, Anders; Blomdell, Anders; Ekman, Torbjörn; Henriksson, Roger; Nilsson, Anders; Nilsson, Klas; Robertz, Sven

    2002-01-01

    The purpose of the presented garbage collector interface is to provide a universal interface for many different implementations of garbage collectors. This is to simplify the integration and exchange of garbage collectors, but also to support incremental, non-conservative, and thread safe implementations. Due to the complexity of the interface, it is aimed at code generators and preprocessors. Experiences from ongoing implementations indicate that the garbage collector interface successfully ...

  9. Optical fingerprints of solid-liquid interfaces: a joint ATR-IR and first principles investigation

    Science.gov (United States)

    Yang, L.; Niu, F.; Tecklenburg, S.; Pander, M.; Nayak, S.; Erbe, A.; Wippermann, S.; Gygi, F.; Galli, G.

    Despite the importance of understanding the structural and bonding properties of solid-liquid interfaces for a wide range of (photo-)electrochemical applications, there are presently no experimental techniques available to directly probe the microscopic structure of solid-liquid interfaces. To develop robust strategies to interpret experiments and validate theory, we carried out attenuated total internal reflection (ATR-IR) spectroscopy measurements and ab initio molecular dynamics (AIMD) simulations of the vibrational properties of interfaces between liquid water and well-controlled prototypical semiconductor substrates. We show the Ge(100)/H2O interface to feature a reversible potential-dependent surface phase transition between Ge-H and Ge-OH termination. The Si(100)/H2O interface is proposed as a model system for corrosion and oxidation processes. We performed AIMD calculations under finite electric fields, revealing different pathways for initial oxidation. These pathways are predicted to exhibit unique spectral signatures. A significant increase in surface specificity can be achieved utilizing an angle-dependent ATR-IR experiment, which allows to detect such signatures at the interfacial layer and consequently changes in the hydrogen bond network. Funding from DOE-BES Grant No. DE-SS0008939 and the Deutsche Forschungsgemeinschaft (RESOLV, EXC 1069) are gratefully acknowledged.

  10. Influence of thermodynamic mechanism of inter- facial adsorption on purifying air-conditioning engineering under intensification of electric field

    Directory of Open Access Journals (Sweden)

    Chen Yun-Yu

    2016-12-01

    Full Text Available As a kind of mass transfer process as well as the basis of separating and purifying mixtures, interfacial adsorption has been widely applied to fields like chemical industry, medical industry and purification engineering in recent years. Influencing factors of interfacial adsorption, in addition to the traditional temperature, intensity of pressure, amount of substance and concentration, also include external fields, such as magnetic field, electric field and electromagnetic field, etc. Starting from the point of thermodynamics and taking the Gibbs adsorption as the model, the combination of energy axiom and the first law of thermodynamics was applied to boundary phase, and thus the theoretical expression for the volume of interface absorption under electric field as well as the mathematical relationship between surface tension and electric field intensity was obtained. In addition, according to the obtained theoretical expression, the volume of interface absorption of ethanol solution under different electric field intensities and concentrations was calculated. Moreover, the mechanism of interfacial adsorption was described from the perspective of thermodynamics and the influence of electric field on interfacial adsorption was explained reasonably, aiming to further discuss the influence of thermodynamic mechanism of interfacial adsorption on purifying air-conditioning engineering under intensification of electric field.

  11. PERSPECTIVE: Electrical activity enhances neuronal survival and regeneration

    Science.gov (United States)

    Corredor, Raul G.; Goldberg, Jeffrey L.

    2009-10-01

    The failure of regeneration in the central nervous system (CNS) remains an enormous scientific and clinical challenge. After injury or in degenerative diseases, neurons in the adult mammalian CNS fail to regrow their axons and reconnect with their normal targets, and furthermore the neurons frequently die and are not normally replaced. While significant progress has been made in understanding the molecular basis for this lack of regenerative ability, a second approach has gained momentum: replacing lost neurons or lost connections with artificial electrical circuits that interface with the nervous system. In the visual system, gene therapy-based 'optogenetics' prostheses represent a competing technology. Now, the two approaches are converging, as recent data suggest that electrical activity itself, via the molecular signaling pathways such activity stimulates, is sufficient to induce neuronal survival and regeneration, particularly in retinal ganglion cells. Here, we review these data, discuss the effects of electrical activity on neurons' molecular signaling pathways and propose specific mechanisms by which exogenous electrical activity may be acting to enhance survival and regeneration.

  12. Guest Editorial Electric Machines in Renewable Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Aliprantis, Dionysios; El-Sharkawi, Mohamed; Muljadi, Eduard; Brown, Ian; Chiba, Akira; Dorrell, David; Erlich, Istvan; Kerszenbaum, Isidor Izzy; Levi, Emil; Mayor, Kevin; Mohammed, Osama; Papathanassiou, Stavros; Popescu, Mircea; Qiao, Wei; Wu, Dezheng

    2015-12-01

    The main objective of this special issue is to collect and disseminate publications that highlight recent advances and breakthroughs in the area of renewable energy resources. The use of these resources for production of electricity is increasing rapidly worldwide. As of 2015, a majority of countries have set renewable electricity targets in the 10%-40% range to be achieved by 2020-2030, with a few notable exceptions aiming for 100% generation by renewables. We are experiencing a truly unprecedented transition away from fossil fuels, driven by environmental, energy security, and socio-economic factors.Electric machines can be found in a wide range of renewable energy applications, such as wind turbines, hydropower and hydrokinetic systems, flywheel energy storage devices, and low-power energy harvesting systems. Hence, the design of reliable, efficient, cost-effective, and controllable electric machines is crucial in enabling even higher penetrations of renewable energy systems in the smart grid of the future. In addition, power electronic converter design and control is critical, as they provide essential controllability, flexibility, grid interface, and integration functions.

  13. Magneto-hydrodynamics of coupled fluid–sheet interface with mass suction and blowing

    International Nuclear Information System (INIS)

    Ahmad, R.

    2016-01-01

    There are large number of studies which prescribe the kinematics of the sheet and ignore the sheet's mechanics. However, the current boundary layer analysis investigates the mechanics of both the electrically conducting fluid and a permeable sheet, which makes it distinct from the other studies in the literature. One of the objectives of the current study is to (i) examine the behaviour of magnetic field effect for both the surface and the electrically conducting fluid (ii) investigate the heat and mass transfer between a permeable sheet and the surrounding electrically conducting fluid across the hydro, thermal and mass boundary layers. Self-similar solutions are obtained by considering the RK45 technique. Analytical solution is also found for the stretching sheet case. The skin friction dual solutions are presented for various types of sheet. The influence of pertinent parameters on the dimensionless velocity, shear stress, temperature, mass concentration, heat and mass transfer rates on the fluid–sheet interface is presented graphically as well as numerically. The obtained results are of potential benefit for studying the electrically conducting flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations or thermal stresses. - Highlights: • The momentum equation is modelled for both the surrounding MHD fluid and the sheet with the effects of mass suction and blowing. • The current study further investigates the heat and mass transfer characteristics between a permeable sheet and the surrounding electrically conducting fluid across the thermal and mass boundary layers. • Both the approximated and analytical techniques have been included for the purpose of comparison, and the perfect numerical agreements have been established with the previous studies. • Dual solutions for the skin friction coefficients are found for various categories of

  14. Promotion of Water-mediated Carbon Removal by Nanostructured Barium Oxide/nickel Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    L Yang; Y Choi; W Qin; H Chen; K Blinn; M Liu; P Liu; J Bai; T Tyson; M Liu

    2011-12-31

    The existing Ni-yttria-stabilized zirconia anodes in solid oxide fuel cells (SOFCs) perform poorly in carbon-containing fuels because of coking and deactivation at desired operating temperatures. Here we report a new anode with nanostructured barium oxide/nickel (BaO/Ni) interfaces for low-cost SOFCs, demonstrating high power density and stability in C{sub 3}H{sub 8}, CO and gasified carbon fuels at 750 C. Synchrotron-based X-ray analyses and microscopy reveal that nanosized BaO islands grow on the Ni surface, creating numerous nanostructured BaO/Ni interfaces that readily adsorb water and facilitate water-mediated carbon removal reactions. Density functional theory calculations predict that the dissociated OH from H2O on BaO reacts with C on Ni near the BaO/Ni interface to produce CO and H species, which are then electrochemically oxidized at the triple-phase boundaries of the anode. This anode offers potential for ushering in a new generation of SOFCs for efficient, low-emission conversion of readily available fuels to electricity.

  15. An interface energy density-based theory considering the coherent interface effect in nanomaterials

    Science.gov (United States)

    Yao, Yin; Chen, Shaohua; Fang, Daining

    2017-02-01

    To characterize the coherent interface effect conveniently and feasibly in nanomaterials, a continuum theory is proposed that is based on the concept of the interface free energy density, which is a dominant factor affecting the mechanical properties of the coherent interface in materials of all scales. The effect of the residual strain caused by self-relaxation and the lattice misfit of nanomaterials, as well as that due to the interface deformation induced by an external load on the interface free energy density is considered. In contrast to the existing theories, the stress discontinuity at the interface is characterized by the interface free energy density through an interface-induced traction. As a result, the interface elastic constant introduced in previous theories, which is not easy to determine precisely, is avoided in the present theory. Only the surface energy density of the bulk materials forming the interface, the relaxation parameter induced by surface relaxation, and the mismatch parameter for forming a coherent interface between the two surfaces are involved. All the related parameters are far easier to determine than the interface elastic constants. The effective bulk and shear moduli of a nanoparticle-reinforced nanocomposite are predicted using the proposed theory. Closed-form solutions are achieved, demonstrating the feasibility and convenience of the proposed model for predicting the interface effect in nanomaterials.

  16. Electrical spin injection and detection in silicon nanowires with axial doping gradient.

    Science.gov (United States)

    Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy David; Zhang, Mei; Xiong, Peng

    2018-06-13

    The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nano-spintronic devices with quasi-1D semiconductor channels.

  17. Improving Sound Systems by Electrical Means

    DEFF Research Database (Denmark)

    Schneider, Henrik

    to intelligent control and protection functionality and so on. In this work different strategies towards improvements of sound systems by electrical means was investigated considering the interfaces between each component and the performance of the full system. The strategies can be categorized by improvements...... reduction in the best case. This technology is very promising since it compensates for most distortion mechanisms of the transducer such as non-linearities, production variation, wear-n-tear, temperature changes and so on. Furthermore the accelerometer output can be used for protection purposes. The only...... of the bended copper foils to optimize the DC resistance. The DC resistance was reduced by 30 % compared to the starting point for a 10 turn toroidal inductor using this method. The combined work indicate that large sound system improvements are in reach by use of electrical means. Innovative solutions have...

  18. High-bandwidth memory interface

    CERN Document Server

    Kim, Chulwoo; Song, Junyoung

    2014-01-01

    This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.

  19. Microscopic theory of the current-voltage relationship across a normal-superconducting interface

    International Nuclear Information System (INIS)

    Kraehenbuehl, Y.; Watts-Tobin, R.J.

    1979-01-01

    Measurements by Pippard et al. have shown the existence of an extra resistance due to the penetration of an electrical potential into a superconductor. Previous theories of this effect are unable to explain the full temperature dependence of the extra resistance because they use oversimplified models of the normal--superconducting interface. We show that the microscopic theory for dirty superconductors leads to a good agreement with experiment over the whole temperature range

  20. Water at Interfaces

    DEFF Research Database (Denmark)

    Björneholm, Olle; Hansen, Martin Hangaard; Hodgson, Andrew

    2016-01-01

    The interfaces of neat water and aqueous solutions play a prominent role in many technological processes and in the environment. Examples of aqueous interfaces are ultrathin water films that cover most hydrophilic surfaces under ambient relative humidities, the liquid/solid interface which drives...

  1. Multidimensional control using a mobile-phone based brain-muscle-computer interface.

    Science.gov (United States)

    Vernon, Scott; Joshi, Sanjay S

    2011-01-01

    Many well-known brain-computer interfaces measure signals at the brain, and then rely on the brain's ability to learn via operant conditioning in order to control objects in the environment. In our lab, we have been developing brain-muscle-computer interfaces, which measure signals at a single muscle and then rely on the brain's ability to learn neuromuscular skills via operant conditioning. Here, we report a new mobile-phone based brain-muscle-computer interface prototype for severely paralyzed persons, based on previous results from our group showing that humans may actively create specified power levels in two separate frequency bands of a single sEMG signal. Electromyographic activity on the surface of a single face muscle (Auricularis superior) is recorded with a standard electrode. This analog electrical signal is imported into an Android-based mobile phone. User-modulated power in two separate frequency band serves as two separate and simultaneous control channels for machine control. After signal processing, the Android phone sends commands to external devices via Bluetooth. Users are trained to use the device via biofeedback, with simple cursor-to-target activities on the phone screen.

  2. Internet Enabled Remote Driving of a Combat Hybrid Electric Power System for Duty Cycle Measurement

    National Research Council Canada - National Science Library

    Goodell, Jarrett; Compere, Marc; Smith, Wilford; Holtz, Dale; Brudnak, Mark; Pozolo, Mike; Paul, Victor; Mohammad, Syed; Mortsfield, Todd; Shvartsman, Andrey

    2007-01-01

    This paper describes a human-in-the-loop motion-based simulator interfaced to hybrid-electric power system hardware, both of which were used to measure the duty cycle of a combat vehicle in a virtual...

  3. Irradiation effects on electrical properties of DNA solution/Al Schottky diodes

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Iwamoto, Mitsumasa

    2018-04-01

    Deoxyribonucleic acid (DNA) has emerged as one of the most exciting organic material and as such extensively studied as a smart electronic material since the last few decades. DNA molecules have been reported to be utilized in the fabrication of small-scaled sensors and devices. In this current work, the effect of alpha radiation on the electrical properties of an Al/DNA/Al device using DNA solution was studied. It was observed that the carrier transport was governed by electrical interface properties at the Al-DNA interface. Current ( I)-voltage ( V) curves were analyzed by employing the interface limited Schottky current equations, i.e., conventional and Cheung and Cheung's models. Schottky parameters such as ideality factor, barrier height and series resistance were also determined. The extracted barrier height of the Schottky contact before and after radiation was calculated as 0.7845, 0.7877, 0.7948 and 0.7874 eV for the non-radiated, 12, 24 and 36 mGy, respectively. Series resistance of the structure was found to decline with the increase in the irradiation, which was due to the increase in the free radical root effects in charge carriers in the DNA solution. Results pertaining to the electronic profiles obtained in this work may provide a better understanding for the development of precise and rapid radiation sensors using DNA solution.

  4. Second harmonic generation study of malachite green adsorption at the interface between air and an electrolyte solution: observing the effect of excess electrical charge density at the interface.

    Science.gov (United States)

    Song, Jinsuk; Kim, Mahn Won

    2010-03-11

    Understanding the differential adsorption of ions at the interface of an electrolyte solution is very important because it is closely related, not only to the fundamental aspects of biological systems, but also to many industrial applications. We have measured the excess interfacial negative charge density at air-electrolyte solution interfaces by using resonant second harmonic generation of oppositely charged probe molecules. The excess charge density increased with the square root of the bulk electrolyte concentration. A new adsorption model that includes the electrostatic interaction between adsorbed molecules is proposed to explain the measured adsorption isotherm, and it is in good agreement with the experimental results.

  5. Ion irradiation effects on ionic liquids interfaced with rf discharge plasmas

    International Nuclear Information System (INIS)

    Baba, K.; Kaneko, T.; Hatakeyama, R.

    2007-01-01

    The availability of plasma ion irradiation toward a gas-liquid interface is investigated in a rf discharge system incorporating an ionic liquid. The introduction of the ionic liquid to the plasma causes the formation of a sheath electric field on the ionic liquid surface, resulting in the acceleration of the ions to the ionic liquid and the generation of secondary electrons from the ionic liquid by the ion irradiation. These effects are found to advance the discharge process and enhance the plasma production

  6. Functional fusion of living systems with synthetic electrode interfaces

    Directory of Open Access Journals (Sweden)

    Oskar Staufer

    2016-02-01

    Full Text Available The functional fusion of “living” biomaterial (such as cells with synthetic systems has developed into a principal ambition for various scientific disciplines. In particular, emerging fields such as bionics and nanomedicine integrate advanced nanomaterials with biomolecules, cells and organisms in order to develop novel strategies for applications, including energy production or real-time diagnostics utilizing biomolecular machineries “perfected” during billion years of evolution. To date, hardware–wetware interfaces that sample or modulate bioelectric potentials, such as neuroprostheses or implantable energy harvesters, are mostly based on microelectrodes brought into the closest possible contact with the targeted cells. Recently, the possibility of using electrochemical gradients of the inner ear for technical applications was demonstrated using implanted electrodes, where 1.12 nW of electrical power was harvested from the guinea pig endocochlear potential for up to 5 h (Mercier, P.; Lysaght, A.; Bandyopadhyay, S.; Chandrakasan, A.; Stankovic, K. Nat. Biotech. 2012, 30, 1240–1243. More recent approaches employ nanowires (NWs able to penetrate the cellular membrane and to record extra- and intracellular electrical signals, in some cases with subcellular resolution (Spira, M.; Hai, A. Nat. Nano. 2013, 8, 83–94. Such techniques include nanoelectric scaffolds containing free-standing silicon NWs (Robinson, J. T.; Jorgolli, M.; Shalek, A. K.; Yoon, M. H.; Gertner, R. S.; Park, H. Nat Nanotechnol. 2012, 10, 180–184 or NW field-effect transistors (Qing, Q.; Jiang, Z.; Xu, L.; Gao, R.; Mai, L.; Lieber, C. Nat. Nano. 2013, 9, 142–147, vertically aligned gallium phosphide NWs (Hällström, W.; Mårtensson, T.; Prinz, C.; Gustavsson, P.; Montelius, L.; Samuelson, L.; Kanje, M. Nano Lett. 2007, 7, 2960–2965 or individually contacted, electrically active carbon nanofibers. The latter of these approaches is capable of recording

  7. Impact of Federal tax policy and electric utility rate schedules upon the solar building/electric utility interface. Executive summary

    Energy Technology Data Exchange (ETDEWEB)

    Feldman, S.L.; Wirtshafter, R.M.; Abrash, M.; Anderson, B.; Sullivan, P.; Kohler, J.

    1978-10-01

    An analysis is performed to show that a utility solar-passive strategy can be used rather effectively in aiding the utility to obtain more efficient load factors and lower costs. The objectives are to determine the impact of active and passive solar energy designs for space conditioning and hot water heating for the residential sector upon the diurnal and annual load curves for several utilities, to assess the effect of present utility pricing policies, and to examine alternative pricing schemes, as well as Federal and state tax credits, as they may affect the optimal sizing and configuration of active solar and passive solar building components. The methodology, the systems model, an overall building design, building cost determination, and a description of TRNSYS are presented. The major parameters discussed that distinguish variation in the cost-effectiveness of particular building design fall into 5 categories: the weather, building configurations, building costs, utility costs and rates, and financial parameters (inclusive of tax credits for solar and energy conservation investment). Five utilities are studied: Colorado Springs Department of Public Utilities; Public Service Co. of New Mexico; New England Electric System; Pacific Gas and Electric; and Georgia Power Co.

  8. HCIDL: Human-computer interface description language for multi-target, multimodal, plastic user interfaces

    Directory of Open Access Journals (Sweden)

    Lamia Gaouar

    2018-06-01

    Full Text Available From the human-computer interface perspectives, the challenges to be faced are related to the consideration of new, multiple interactions, and the diversity of devices. The large panel of interactions (touching, shaking, voice dictation, positioning … and the diversification of interaction devices can be seen as a factor of flexibility albeit introducing incidental complexity. Our work is part of the field of user interface description languages. After an analysis of the scientific context of our work, this paper introduces HCIDL, a modelling language staged in a model-driven engineering approach. Among the properties related to human-computer interface, our proposition is intended for modelling multi-target, multimodal, plastic interaction interfaces using user interface description languages. By combining plasticity and multimodality, HCIDL improves usability of user interfaces through adaptive behaviour by providing end-users with an interaction-set adapted to input/output of terminals and, an optimum layout. Keywords: Model driven engineering, Human-computer interface, User interface description languages, Multimodal applications, Plastic user interfaces

  9. Experimental investigation on the electrical contact behavior of rolling contact connector

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Junxing; Yang, Fei, E-mail: yfei2007@mail.xjtu.edu.cn; Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-12-15

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

  10. Brain Computer Interfaces, a Review

    Directory of Open Access Journals (Sweden)

    Luis Fernando Nicolas-Alonso

    2012-01-01

    Full Text Available A brain-computer interface (BCI is a hardware and software communications system that permits cerebral activity alone to control computers or external devices. The immediate goal of BCI research is to provide communications capabilities to severely disabled people who are totally paralyzed or ‘locked in’ by neurological neuromuscular disorders, such as amyotrophic lateral sclerosis, brain stem stroke, or spinal cord injury. Here, we review the state-of-the-art of BCIs, looking at the different steps that form a standard BCI: signal acquisition, preprocessing or signal enhancement, feature extraction, classification and the control interface. We discuss their advantages, drawbacks, and latest advances, and we survey the numerous technologies reported in the scientific literature to design each step of a BCI. First, the review examines the neuroimaging modalities used in the signal acquisition step, each of which monitors a different functional brain activity such as electrical, magnetic or metabolic activity. Second, the review discusses different electrophysiological control signals that determine user intentions, which can be detected in brain activity. Third, the review includes some techniques used in the signal enhancement step to deal with the artifacts in the control signals and improve the performance. Fourth, the review studies some mathematic algorithms used in the feature extraction and classification steps which translate the information in the control signals into commands that operate a computer or other device. Finally, the review provides an overview of various BCI applications that control a range of devices.

  11. Brain Computer Interfaces, a Review

    Science.gov (United States)

    Nicolas-Alonso, Luis Fernando; Gomez-Gil, Jaime

    2012-01-01

    A brain-computer interface (BCI) is a hardware and software communications system that permits cerebral activity alone to control computers or external devices. The immediate goal of BCI research is to provide communications capabilities to severely disabled people who are totally paralyzed or ‘locked in’ by neurological neuromuscular disorders, such as amyotrophic lateral sclerosis, brain stem stroke, or spinal cord injury. Here, we review the state-of-the-art of BCIs, looking at the different steps that form a standard BCI: signal acquisition, preprocessing or signal enhancement, feature extraction, classification and the control interface. We discuss their advantages, drawbacks, and latest advances, and we survey the numerous technologies reported in the scientific literature to design each step of a BCI. First, the review examines the neuroimaging modalities used in the signal acquisition step, each of which monitors a different functional brain activity such as electrical, magnetic or metabolic activity. Second, the review discusses different electrophysiological control signals that determine user intentions, which can be detected in brain activity. Third, the review includes some techniques used in the signal enhancement step to deal with the artifacts in the control signals and improve the performance. Fourth, the review studies some mathematic algorithms used in the feature extraction and classification steps which translate the information in the control signals into commands that operate a computer or other device. Finally, the review provides an overview of various BCI applications that control a range of devices. PMID:22438708

  12. LabVIEW Interface for PCI-SpaceWire Interface Card

    Science.gov (United States)

    Lux, James; Loya, Frank; Bachmann, Alex

    2005-01-01

    This software provides a LabView interface to the NT drivers for the PCISpaceWire card, which is a peripheral component interface (PCI) bus interface that conforms to the IEEE-1355/ SpaceWire standard. As SpaceWire grows in popularity, the ability to use SpaceWire links within LabVIEW will be important to electronic ground support equipment vendors. In addition, there is a need for a high-level LabVIEW interface to the low-level device- driver software supplied with the card. The LabVIEW virtual instrument (VI) provides graphical interfaces to support all (1) SpaceWire link functions, including message handling and routing; (2) monitoring as a passive tap using specialized hardware; and (3) low-level access to satellite mission-control subsystem functions. The software is supplied in a zip file that contains LabVIEW VI files, which provide various functions of the PCI-SpaceWire card, as well as higher-link-level functions. The VIs are suitably named according to the matching function names in the driver manual. A number of test programs also are provided to exercise various functions.

  13. Scoping calculations of power sources for nuclear electric propulsion

    International Nuclear Information System (INIS)

    Difilippo, F.C.

    1994-05-01

    This technical memorandum describes models and calculational procedures to fully characterize the nuclear island of power sources for nuclear electric propulsion. Two computer codes were written: one for the gas-cooled NERVA derivative reactor and the other for liquid metal-cooled fuel pin reactors. These codes are going to be interfaced by NASA with the balance of plant in order to making scoping calculations for mission analysis

  14. Electrosynthesis of Copper-Tetracyanoquinodimethane Based on the Coupling Charge Transfer across Water/1,2-Dichloroethane Interface

    International Nuclear Information System (INIS)

    Huang, Li; Li, Pei; Pamphile, Ndagijimana; Tian, Zhong-Qun; Zhan, Dongping

    2014-01-01

    Graphical abstract: - Highlights: • Organic semiconductor CuTCNQ is synthesized through electrochemistry of liquid/liquid interface. • A coupling charge transfer (CCT) mechanism is proposed for organic electrosynthesis. • The obtained CuTCNQ has good electrochemical and electronic properties. - Abstract: The organic salt Copper-Tetracyanoquinodimethane (CuTCNQ) is an important semiconductor used in electronics for field-effect transistors, switches and memory devices. Here we present a novel electrosynthetic method of CuTCNQ microneedles based on the coupling charge transfer across water/1,2-dichloroethane (W/1,2-DCE) interface. A HOPG electrode is covered by a small volume of 1,2-DCE solution, which is further covered by an aqueous solution to construct the W/1,2-DCE interface. When TCNQ in 1,2-DCE phase is reduced on HOPG, Cu 2+ in the aqueous solution will transfer across the W/1,2-DCE interface in order to maintain the electric neutrality. Therein CuTCNQ microneedles are formed which have good solid-state electrochemical and electronic properties. This coupling charge transfer mechanism is valuable and broadens the applications of liquid/liquid interface in organic electrosynthesis

  15. User Interface History

    DEFF Research Database (Denmark)

    Jørgensen, Anker Helms; Myers, Brad A

    2008-01-01

    User Interfaces have been around as long as computers have existed, even well before the field of Human-Computer Interaction was established. Over the years, some papers on the history of Human-Computer Interaction and User Interfaces have appeared, primarily focusing on the graphical interface e...

  16. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  17. 76 FR 36864 - Special Conditions: Gulfstream Model GVI Airplane; Operation Without Normal Electric Power

    Science.gov (United States)

    2011-06-23

    ... Normal Electric Power AGENCY: Federal Aviation Administration (FAA), DOT. ACTION: Final special... Interface Branch, ANM-111, Transport Standards Staff, Transport Airplane Directorate, Aircraft Certification... Model GVI airplane will be an all-new, two- engine jet transport airplane. The maximum takeoff weight...

  18. Noncontact tomography and a pH-sensitive nanocomposite for monitoring osseointegrated prosthesis interfaces

    Science.gov (United States)

    Gupta, Sumit; Loh, Kenneth J.

    2017-04-01

    The main objective of this research is to develop a noncontact and noninvasive method for monitoring infections at the interface of human tissue and osseointegrated prostheses. The technique used here is centered on the theory of a noncontact permittivity imaging technique known as electrical capacitance tomography (ECT). This work is divided into two main parts. First, an ECT electrical permittivity reconstruction software and hardware system was developed. Second, a carbon nanotube-polyaniline nanocomposite thin film was designed and fabricated such that its electrical permittivity is sensitive to pH stimuli. The dielectric properties of this thin film were characterized as it was exposed to different pH buffer solutions. It is envisioned that osseointegrated implants can be pre-coated with the pH-sensitive nanocomposite prior to implant. When infection occurs and alters the local pH of tissue at the human-prosthesis interface, the dielectric property of the film would change accordingly. Then, ECT can interrogate the cross-section of the human limb and reconstruct its permittivity distribution, revealing localized changes in permittivity due to infection. To validate this concept, a prosthesis phantom was coated with the nanocomposite pH sensor and then immersed in different pH buffer solutions. ECT was conducted, and the results showed that the magnitude and location of subsurface, localized, pH changes could be detected. In general, noncontact tomography coupled with stimuliresponsive thin films could pave way for new modalities of noninvasive human body imaging, in particular, for patients with osseointegrated implants and prostheses.

  19. Status of electricity trading in the United States

    International Nuclear Information System (INIS)

    McMillan, P.H.

    1999-01-01

    The evolution of the energy marketplace in the United States is presented in a series of overhead viewgraphs. The influencing factors of energy trading are described as being supply concentration, rate cross subsidization, price volatility, physics, stranded investment, market structure and value drivers. A map depicting trading hubs and market structures is included, along with an outline of the key characteristics of a successful market hub. Gas-electric interface issues are also discussed. It was stated that contrary to conventional wisdom that as gas and electricity markets converge, traders will routinely cross-hedge gas and power, the practical reality is that volatility of the gas to electricity basis spread actually limits hedging opportunities. A winning strategy should include thorough fundamental and technical analysis; every trade or position should have a well thought-out exit strategy; get closer to physical assets; and be careful across regional hubs and commodities. 2 tabs., 7 figs

  20. Fast-Response electric drives of Mechanical Engineering objects

    Science.gov (United States)

    Doykina, L. A.; Bukhanov, S. S.; Gryzlov, A. A.

    2018-03-01

    The article gives a solution to the problem of increasing the speed in the electrical drives of machine-building enterprises due to the application of a structure with ISC control. In this case, it is possible to get rid of the speed sensors. It is noted that in this case no circulating pulsations are applied to the input of the control system, caused by a non-identical interface between the sensor and the shaft of the operating mechanism. For detailed modeling, a mathematical model of an electric drive with distributed parameters was proposed. The calculation of such system was carried out by the finite element method. Taking into account the distributed characteristic of the system parameters allowed one to take into account the discrete nature of the electric machine’s work. The simulation results showed that the response time in the control circuit is estimated at a time constant of 0.0015, which is about twice as fast as in traditional vector control schemes.

  1. Microprocessor interfacing

    CERN Document Server

    Vears, R E

    2014-01-01

    Microprocessor Interfacing provides the coverage of the Business and Technician Education Council level NIII unit in Microprocessor Interfacing (syllabus U86/335). Composed of seven chapters, the book explains the foundation in microprocessor interfacing techniques in hardware and software that can be used for problem identification and solving. The book focuses on the 6502, Z80, and 6800/02 microprocessor families. The technique starts with signal conditioning, filtering, and cleaning before the signal can be processed. The signal conversion, from analog to digital or vice versa, is expl

  2. Electrical control of antiferromagnetic metal up to 15 nm

    Science.gov (United States)

    Zhang, PengXiang; Yin, GuFan; Wang, YuYan; Cui, Bin; Pan, Feng; Song, Cheng

    2016-08-01

    Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.

  3. High benefits approach for electrical energy conversion in electric vehicles from DC to PWM-AC without any generated harmonic

    International Nuclear Information System (INIS)

    Fathabadi, Hassan

    2014-01-01

    Highlights: • Novel hybrid power source including AC feature for using in electric/hybrid vehicles. • Minimizing the energy loss in electric/hybrid vehicles by using the proposed system. • Suitable AC wave form for braking/accelerating purposes in electric/hybrid vehicles. • A novelty is that the harmonic generated by the added AC feature is really zero. • Another novelty is the capability of choosing arbitrary frequency for AC feature. - Abstract: This paper presents a novel hybrid power source, including a Li-ion battery together with an interface, which generates simultaneously electrical energy with the forms of both DC and AC for electric vehicles. A novel and high benefits approach is applied to convert the electrical energy of the Li-ion battery from DC form to single-phase symmetric pulse-width modulation (PWM)-AC form. Harmonic generation is one of the important problems when electrical energy is converted from DC to AC but there are not any generated harmonic during the DC/AC conversion using the proposed technique. The proposed system will be widely used in electric/hybrid vehicles because it has many benefits. Minimizing the energy loss (saving energy), no generated harmonic (it is really zero), the capability of arbitrary/necessary frequency selection for output AC voltage and the ability of long distance energy transmission are some novelties and advantages of the proposed system. The proposed hybrid power source including DC/AC PWM inverter is simulated in Proteus 6 software environment and a laboratory-based prototype of the hybrid power source is constructed to validate the theoretical and simulation results. Simulation and experimental results are presented to prove the superiority of the proposed hybrid power supply

  4. Interface Realisms

    DEFF Research Database (Denmark)

    Pold, Søren

    2005-01-01

    This article argues for seeing the interface as an important representational and aesthetic form with implications for postmodern culture and digital aesthetics. The interface emphasizes realism due in part to the desire for transparency in Human-Computer Interaction (HCI) and partly...

  5. Junction Quality of SnO2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling.

    Science.gov (United States)

    Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; Gorman, Brian P; Ye, Jichun; Jiang, Chun-Sheng; Yan, Yanfa; Al-Jassim, Mowafak M

    2017-11-08

    Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO 2 -based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; (2) cells with an intrinsic SnO 2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO 2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO ESL ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO 2 -based ESL material quality and the ESL/PS interface.

  6. Extracting interface locations in multilayer polymer waveguide films using scanning angle Raman spectroscopy

    International Nuclear Information System (INIS)

    Bobbitt, Jonathan M.; Smith, Emily A.

    2017-01-01

    There is an increasing demand for nondestructive in situ techniques that measure chemical content, total thickness, and interface locations for multilayer polymer films, and SA Raman spectroscopy in combination with appropriate data models can provide this information. A scanning angle (SA) Raman spectroscopy method was developed to measure the chemical composition of multilayer polymer waveguide films and to extract the location of buried interfaces between polymer layers with 7–80-nm axial spatial resolution. The SA Raman method measures Raman spectra as the incident angle of light upon a prism-coupled thin film is scanned. Six multilayer films consisting of poly(methyl methacrylate)/polystyrene or poly(methyl methacrylate)/polystyrene/poly(methyl methacrylate) were prepared with total thicknesses ranging from 330-1260 nm. The interface locations were varied by altering the individual layer thicknesses between 140-680 nm. The Raman amplitude ratio of the 1605 cm -1 peak for PS and 812 cm -1 peak for PMMA was used in calculations of the electric field intensity within the polymer layers to model the SA Raman data and extract the total thickness and interface locations. There is an average 8% and 7% difference in the measured thickness between the SA Raman and profilometry measurements for bilayer and trilayer films, respectively.

  7. Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

    Science.gov (United States)

    Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

    2017-11-01

    A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

  8. A miniature electrical capacitance tomograph

    Science.gov (United States)

    York, T. A.; Phua, T. N.; Reichelt, L.; Pawlowski, A.; Kneer, R.

    2006-08-01

    The paper describes a miniature electrical capacitance tomography system. This is based on a custom CMOS silicon integrated circuit comprising eight channels of signal conditioning electronics to source drive signals and measure voltages. Electrodes are deposited around a hole that is fabricated, using ultrasonic drilling, through a ceramic substrate and has an average diameter of 0.75 mm. The custom chip is interfaced to a host computer via a bespoke data acquisition system based on a microcontroller, field programmable logic device and wide shift register. This provides fast capture of up to 750 frames of data prior to uploading to the host computer. Data capture rates of about 6000 frames per second have been achieved for the eight-electrode sensor. This rate could be increased but at the expense of signal to noise. Captured data are uploaded to a PC, via a RS232 interface, for off-line imaging. Initial tests are reported for the static case involving 200 µm diameter rods that are placed in the sensor and for the dynamic case using the dose from an inhaler.

  9. Molecular dynamics study of structure and vibrational spectra at zwitterionoic lipid/aqueous KCl, NaCl, and CaCl2 solution interfaces

    Science.gov (United States)

    Ishiyama, Tatsuya; Shirai, Shinnosuke; Okumura, Tomoaki; Morita, Akihiro

    2018-06-01

    Molecular dynamics (MD) simulations of KCl, NaCl, and CaCl2 solution/dipalmytoylphosphatidylcholine lipid interfaces were performed to analyze heterodyne-detected vibrational sum frequency generation (HD-VSFG) spectra in relation to the interfacial water structure. The present MD simulation well reproduces the experimental spectra and elucidates a specific cation effect on the interfacial structure. The K+, Na+, and Ca2+ cation species penetrate in the lipid layer more than the anions in this order, due to the electrostatic interaction with negative polar groups of lipid, and the electric double layer between the cations and anions cancels the intrinsic orientation of water at the water/lipid interface. These mechanisms explain the HD-VSFG spectrum of the water/lipid interface and its spectral perturbation by adding the ions. The lipid monolayer reverses the order of surface preference of the cations at the solution/lipid interface from that at the solution/air interface.

  10. Easy-to-use interface

    International Nuclear Information System (INIS)

    Blattner, D O; Blattner, M M; Tong, Y.

    1999-01-01

    Easy-to-use interfaces are a class of interfaces that fall between public access interfaces and graphical user interfaces in usability and cognitive difficulty. We describe characteristics of easy-to-use interfaces by the properties of four dimensions: selection, navigation, direct manipulation, and contextual metaphors. Another constraint we introduced was to include as little text as possible, and what text we have will be in at least four languages. Formative evaluations were conducted to identify and isolate these characteristics. Our application is a visual interface for a home automation system intended for a diverse set of users. The design will be expanded to accommodate the visually disabled in the near future

  11. Electric Generators and their Control for Large Wind Turbines

    DEFF Research Database (Denmark)

    Boldea, Ion; Tutelea, Lucian; Rallabandi, Vandana

    2017-01-01

    induction generator, the cage rotor induction generator, and the synchronous generator with DC or permanent magnet excitation. The operating principle, performance, optimal design, and the modeling and control of the machine-side converter for each kind of generator are adressed and evaluated. In view......The electric generator and its power electronics interface for wind turbines (WTs) have evolved rapidly toward higher reliability and reduced cost of energy in the last 40 years. This chapter describes the up-to-date electric generators existing in the wind power industry, namely, the doubly fed...... of the fact that individual power rating of WTs has increased to around 10 MW, generator design and control technologies required to reach this power rating are discussed....

  12. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  13. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  14. Structural and magnetic depth profiles of magneto-ionic heterostructures beyond the interface limit

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, DA; Grutter, AJ; Arenholz, E; Liu, K; Kirby, BJ; Borchers, JA; Maranville, BB

    2016-07-22

    Electric field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have been prominently featured in the modification of interface characteristics. Here, we demonstrate magnetoelectric coupling moderated by voltage-driven oxygen migration beyond the interface in relatively thick AlOx/GdOx/Co(15 nm) films. Oxygen migration and Co magnetization are quantitatively mapped with polarized neutron reflectometry under electro-thermal conditioning. The depth-resolved profiles uniquely identify interfacial and bulk behaviours and a semi-reversible control of the magnetization. Magnetometry measurements suggest changes in the microstructure which disrupt long-range ferromagnetic ordering, resulting in an additional magnetically soft phase. X-ray spectroscopy confirms changes in the Co oxidation state, but not in the Gd, suggesting that the GdOx transmits oxygen but does not source or sink it. These results together provide crucial insight into controlling magnetism via magneto-ionic motion, both at interfaces and throughout the bulk of the films.

  15. Electric Motor Thermal Management R&D. Annual Report

    Energy Technology Data Exchange (ETDEWEB)

    Bennion, Kevin [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-04-01

    With the push to reduce component volumes, lower costs, and reduce weight without sacrificing performance or reliability, the challenges associated with thermal management increase for power electronics and electric motors. Thermal management for electric motors will become more important as the automotive industry continues the transition to more electrically dominant vehicle propulsion systems. The transition to more electrically dominant propulsion systems leads to higher-power duty cycles for electric drive systems. Thermal constraints place significant limitations on how electric motors ultimately perform, and as thermal management improves, there will be a direct trade-off between motor performance, efficiency, cost, and the sizing of electric motors to operate within the thermal constraints. The goal of this research project is to support broad industry demand for data, analysis methods, and experimental techniques to improve and better understand motor thermal management. Work in FY15 focused on two areas related to motor thermal management: passive thermal performance and active convective cooling. Passive thermal performance emphasized the thermal impact of materials and thermal interfaces among materials within an assembled motor. The research tasks supported the publication of test methods and data for thermal contact resistances and direction-dependent thermal conductivity within an electric motor. Active convective cooling focused on measuring convective heat-transfer coefficients using automatic transmission fluid (ATF). Data for average convective heat transfer coefficients for direct impingement of ATF jets was published. Also, experimental hardware for mapping local-scale and stator-scale convective heat transfer coefficients for ATF jet impingement were developed.

  16. Experimental study of hybrid interface cooling system using air ventilation and nanofluid

    Science.gov (United States)

    Rani, M. F. H.; Razlan, Z. M.; Bakar, S. A.; Desa, H.; Wan, W. K.; Ibrahim, I.; Kamarrudin, N. S.; Bin-Abdun, Nazih A.

    2017-09-01

    The hybrid interface cooling system needs to be established to chill the battery compartment of electric car and maintained its ambient temperature inside the compartment between 25°C to 35°C. The air cooling experiment has been conducted to verify the cooling capacity, compressor displacement volume, dehumidifying value and mass flow rate of refrigerant (R-410A). At the same time, liquid cooling system is analysed theoretically by comparing the performance of two types of nanofluid, i.e., CuO + Water and Al2O3 + Water, based on the heat load generated inside the compartment. In order for the result obtained to be valid and reliable, several assumptions are considered during the experimental and theoretical analysis. Results show that the efficiency of the hybrid interface cooling system is improved as compared to the individual cooling system.

  17. On the Interface Dipole at the Pentacene−Fullerene Heterojunction: A Theoretical Study

    KAUST Repository

    Linares, Mathieu

    2010-02-25

    The electronic structure at organic/organic interfaces plays a key role, among others, in defining the quantum efficiency of organics-based photovoltaic cells. Here, we perform quantum-chemical and microelectrostatic calculations on molecular aggregates of various sizes and shapes to characterize the interfacial dipole moment at pentacene/C60 heterojunctions. The results show that the interfacial dipole mostly originates in polarization effects due to the asymmetry in the multipolar expansion of the electronic density distribution between the interacting molecules, rather than in a charge transfer from donor to acceptor. The local dipole is found to fluctuate in sign and magnitude over the interface and appears as a sensitive probe of the relative arrangements of the pentacene and C60 molecules (and of the resulting local electrical fields sensed by the molecular units). © 2010 American Chemical Society.

  18. On the Interface Dipole at the Pentacene−Fullerene Heterojunction: A Theoretical Study

    KAUST Repository

    Linares, Mathieu; Beljonne, David; Cornil, Jérôme; Lancaster, Kelly; Brédas, Jean-Luc; Verlaak, Stijn; Mityashin, Alexander; Heremans, Paul; Fuchs, Andreas; Lennartz, Christian; Idé, Julien; Méreau, Raphaël; Aurel, Philippe; Ducasse, Laurent; Castet, Frédéric

    2010-01-01

    The electronic structure at organic/organic interfaces plays a key role, among others, in defining the quantum efficiency of organics-based photovoltaic cells. Here, we perform quantum-chemical and microelectrostatic calculations on molecular aggregates of various sizes and shapes to characterize the interfacial dipole moment at pentacene/C60 heterojunctions. The results show that the interfacial dipole mostly originates in polarization effects due to the asymmetry in the multipolar expansion of the electronic density distribution between the interacting molecules, rather than in a charge transfer from donor to acceptor. The local dipole is found to fluctuate in sign and magnitude over the interface and appears as a sensitive probe of the relative arrangements of the pentacene and C60 molecules (and of the resulting local electrical fields sensed by the molecular units). © 2010 American Chemical Society.

  19. Passivation of Ge/high-κ interface using RF Plasma nitridation

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2018-01-01

    In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

  20. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Manzo, Michele; Gallo, Katia, E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2016-03-21

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  1. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

    Science.gov (United States)

    Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K.

    2018-04-01

    Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ˜4 × 1012 cm-2 fewer positive fixed charges and up to ˜1 × 1013 cm-2 eV-1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.

  2. Instability of surface electron cyclotron TM-modes influenced by non-monochromatic alternating electric field

    International Nuclear Information System (INIS)

    Girka, I. O.; Girka, V. O.; Sydora, R. D.; Thumm, M.

    2016-01-01

    The influence of non-monochromaticity of an external alternating electric field on excitation of TM eigenmodes at harmonics of the electron cyclotron frequency is considered here. These TM-modes propagate along the plasma interface in a metal waveguide. An external static constant magnetic field is oriented perpendicularly to the plasma interface. The problem is solved theoretically using the kinetic Vlasov-Boltzmann equation for description of plasma particles motion and the Maxwell equations for description of the electromagnetic mode fields. The external alternating electric field is supposed to be a superposition of two waves, whose amplitudes are different and their frequencies correlate as 2:1. An infinite set of equations for electric field harmonics of these modes is derived with the aid of nonlinear boundary conditions. This set is solved using the wave packet approach consisting of the main harmonic frequency and two nearest satellite temporal harmonics. Analytical studies of the obtained set of equations allow one to find two different regimes of parametric instability, namely, enhancement and suppression of the instability. Numerical analysis of the instability is carried out for the three first electron cyclotron harmonics.

  3. Interface Modification of Dye-sensitized Solar Cells with Pivalic Acid to Enhance the Open-circuit Voltage

    KAUST Repository

    Li, Xin

    2009-01-01

    Pivalic acid (PVA) was used as a new coadsorbent to dye-sensitized solar cells (DSCs) to modify the interface between the TiO2 films and electrolyte. The addition of PVA improved the light-to-electricity conversion efficiency of devices by 8% by enhancing the open-circuit voltage. Copyright © 2009 The Chemical Society of Japan.

  4. Rough surface electrical contact resistance considering scale dependent properties and quantum effects

    International Nuclear Information System (INIS)

    Jackson, Robert L.; Crandall, Erika R.; Bozack, Michael J.

    2015-01-01

    The objective of this work is to evaluate the effect of scale dependent mechanical and electrical properties on electrical contact resistance (ECR) between rough surfaces. This work attempts to build on existing ECR models that neglect potentially important quantum- and size-dependent contact and electrical conduction mechanisms present due to the asperity sizes on typical surfaces. The electrical conductance at small scales can quantize or show a stepping trend as the contact area is varied in the range of the free electron Fermi wavelength squared. This work then evaluates if these effects remain important for the interface between rough surfaces, which may include many small scale contacts of varying sizes. The results suggest that these effects may be significant in some cases, while insignificant for others. It depends on the load and the multiscale structure of the surface roughness

  5. Applications for Electrical Impedance Tomography (EIT) and Electrical Properties of the Human Body.

    Science.gov (United States)

    Lymperopoulos, Georgios; Lymperopoulos, Panagiotis; Alikari, Victoria; Dafogianni, Chrisoula; Zyga, Sofia; Margari, Nikoletta

    2017-01-01

    Electrical Impedance Tomography (EIT) is a promising application that displays changes in conductivity within a body. The basic principle of the method is the repeated measurement of surface voltages of a body, which are a result of rolling injection of known and small-volume sinusoidal AC current to the body through the electrodes attached to its surface. This method finds application in biomedicine, biology and geology. The objective of this paper is to present the applications of Electrical Impedance Tomography, along with the method's capabilities and limitations due to the electrical properties of the human body. For this purpose, investigation of existing literature has been conducted, using electronic databases, PubMed, Google Scholar and IEEE Xplore. In addition, there was a secondary research phase, using paper citations found during the first research phase. It should be noted that Electrical Impedance Tomography finds use in a plethora of medical applications, as the different tissues of the body have different conductivities and dielectric constants. Main applications of EIT include imaging of lung function, diagnosis of pulmonary embolism, detection of tumors in the chest area and diagnosis and distinction of ischemic and hemorrhagic stroke. EIT advantages include portability, low cost and safety, which the method provide, since it is a noninvasive imaging method that does not cause damage to the body. The main disadvantage of the method, which blocks its wider spread, appears in the image composition from the voltage measurements, which are conducted by electrodes placed on the periphery of the body, because the injected currents are affected nonlinearly by the general distribution of the electrical properties of the body. Furthermore, the complex impedance of the skin-electrode interface can be modelled by using a capacitor and two resistor, as a result of skin properties. In conclusion, Electrical Impedance Tomography is a promising method for the

  6. A comparative study of the thermal interface materials with graphene and boron nitride fillers

    Science.gov (United States)

    Kargar, F.; Salgado, R.; Legedza, S.; Renteria, J.; Balandin, A. A.

    2014-09-01

    We report the results of an experimental study that compares the performance of graphene and boron nitride flakes as fillers in the thermal interface materials. The thickness of both fillers varied from a single atomic plane to about a hundred. The measurements have been conducted using a standard TIM tester. Our results show that the addition of a small fraction of graphene (f=4 wt%) to a commercial thermal interface material increases the resulting apparent thermal conductivity substantially stronger than the addition of boron nitride. The obtained data suggest that graphene and fewlayer graphene flakes couple better to the matrix materials than the boron nitride fillers. A combination of both fillers can be used to increase the thermal conductivity while controlling the electrical conduction.

  7. Organic interfaces

    NARCIS (Netherlands)

    Poelman, W.A.; Tempelman, E.

    2014-01-01

    This paper deals with the consequences for product designers resulting from the replacement of traditional interfaces by responsive materials. Part 1 presents a theoretical framework regarding a new paradigm for man-machine interfacing. Part 2 provides an analysis of the opportunities offered by new

  8. Complex Interfaces Under Change

    DEFF Research Database (Denmark)

    Rosbjerg, Dan

    The hydrosphere is dynamic across the major compartments of the Earth system: the atmosphere, the oceans and seas, the land surface water, and the groundwater within the strata below the two last compartments. The global geography of the hydrosphere essentially depends on thermodynamic and mechan...... these interfaces and interfaced compartments and processes. Climate, sea-level, oceanographic currents and hydrological processes are all affected, while anthropogenic changes are often intense in the geographic settings corresponding to such interfaces....... and mechanical processes that develop within this structure. Water-related processes at the interfaces between the compartments are complex, depending both on the interface itself, and on the characteristics of the interfaced compartments. Various aspects of global change directly or indirectly impact...

  9. Voltage Control of Rare-Earth Magnetic Moments at the Magnetic-Insulator-Metal Interface

    Science.gov (United States)

    Leon, Alejandro O.; Cahaya, Adam B.; Bauer, Gerrit E. W.

    2018-01-01

    The large spin-orbit interaction in the lanthanides implies a strong coupling between their internal charge and spin degrees of freedom. We formulate the coupling between the voltage and the local magnetic moments of rare-earth atoms with a partially filled 4 f shell at the interface between an insulator and a metal. The rare-earth-mediated torques allow the power-efficient control of spintronic devices by electric-field-induced ferromagnetic resonance and magnetization switching.

  10. Quantization of interface currents

    Energy Technology Data Exchange (ETDEWEB)

    Kotani, Motoko [AIMR, Tohoku University, Sendai (Japan); Schulz-Baldes, Hermann [Department Mathematik, Universität Erlangen-Nürnberg, Erlangen (Germany); Villegas-Blas, Carlos [Instituto de Matematicas, Cuernavaca, UNAM, Cuernavaca (Mexico)

    2014-12-15

    At the interface of two two-dimensional quantum systems, there may exist interface currents similar to edge currents in quantum Hall systems. It is proved that these interface currents are macroscopically quantized by an integer that is given by the difference of the Chern numbers of the two systems. It is also argued that at the interface between two time-reversal invariant systems with half-integer spin, one of which is trivial and the other non-trivial, there are dissipationless spin-polarized interface currents.

  11. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  12. Spectroscopic Analysis of Ion Concentration Profile at Electrode/Electrolyte Interface by Interferometry

    Science.gov (United States)

    Moore, David; Saraf, Ravi

    2014-03-01

    Owing to the difference in Fermi levels at an electrode/electrolyte interface, ions form an electrical double layer (EDL) with ion concentrations well over 10-fold compared to bulk. The concentration profile of the EDL intrinsically affects the electrochemical reaction rates at the electrode, which is of great significance in many applications, such as batteries and biosensors. Conventionally, using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), the electrical properties of the EDL are represented as ``equivalent circuits'' consisting of the resistance to charge transfer (Rct), the double layer capacitance (Cdl) and a ``Warburg (constant phase) diffusion element'' that represents the long range diffusion of ions to the electrode. The translation to the well-understood physical structure can be lost as complicated effects are often lumped together. For example, the effect of subtle modification of the electrode surface by say, redox compounds, enzymes, or polymers is not directly measured, and must be inferred by capacitance changes. An interferometer method will be described to directly measure changes in concentration at the interface during redox process. This method in concert with CV or EIS performed concomitantly will lead to more information to model the diffuse layer for improved understanding of the kinetics of the reaction at different distances from the electrode. Applications to DNA and polymer adsorption binding will be discussed.

  13. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  14. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  15. Configurations of NPD : production interfaces and interface integration mechanisms

    NARCIS (Netherlands)

    Smulders, F.E.H.M.; Boer, H.; Hansen, P.H.K.; Gubi, E.; Dorst, C.H.

    2002-01-01

    This paper describes and illustrates different configurations of the interface between new product development and production processes, including both intra–firm and inter–firm interfaces. These configurations are partly based on a process view of product innovation and partly on a structural view

  16. Utilizing multichannel electrical resistivity methods to examine the dynamics of the fresh water–seawater interface in two Hawaiian groundwater systems

    Science.gov (United States)

    Dimova, Natasha T.; Swarzenski, Peter W.; Dulaiova, Henrieta; Glenn, Craig R.

    2012-01-01

    Multichannel electrical resistivity (ER) measurements were conducted at two contrasting coastal sites in Hawaii to obtain new information on the spatial scales and dynamics of the fresh water–seawater interface and rates of coastal groundwater exchange. At Kiholo Bay (located on the dry, Kona side of the Big Island) and at a site in Maunalua Bay (Oahu), there is an evidence for abundant submarine groundwater discharge (SGD). However, the hydrologic and geologic controls on coastal groundwater discharge are likely to be different at these two sites. While at Kiholo Bay SGD is predominantly through lava tubes, at the Maunalua Bay site exchange occurs mostly through nearshore submarine springs. In order to calculate SGD fluxes, it is important to understand the spatial and temporal scales of coastal groundwater exchange. From ER time series data, subsurface salinity distributions were calculated using site-specific formation factors. A salinity mass balance box model was then used to calculate rates of point source (i.e., spatially discreet) and total fresh water discharge. From these data, mean SGD rates were calculated for Kiholo Bay (∼9,200 m3/d) and for the Maunalua Bay site (∼5,900 m3/d). While such results are on the same order of magnitude to geochemical tracer-derived SGD rates, the ER SGD rates provide enhanced details of coastal groundwater exchange that can enable a more cohesive whole watershed perspective.

  17. An Approach to Interface Synthesis

    DEFF Research Database (Denmark)

    Madsen, Jan; Hald, Bjarne

    1995-01-01

    Presents a novel interface synthesis approach based on a one-sided interface description. Whereas most other approaches consider interface synthesis as optimizing a channel to existing client/server modules, we consider the interface synthesis as part of the client/server module synthesis (which...... may contain the re-use of existing modules). The interface synthesis approach describes the basic transformations needed to transform the server interface description into an interface description on the client side of the communication medium. The synthesis approach is illustrated through a point...

  18. The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

    Science.gov (United States)

    Ye, Ning

    study, TiN-MgO was the only measured interface of this type, and maintained the record for the highest reported ITC for a metal-semiconductor interface. By varying the Group IV metal, the mass of the metal's light atom was independently tuned, allowing the ability to tune the acoustic phonon frequencies in the metal without significant effect to optical phonon band structure. We find that the ITC of all the studied interfaces are quite high, significantly exceeding the DMM predictions, and in the case of XN-ScN interfaces even exceed the radiative limit for elastic phonon transport. The results imply that mechanisms such as anharmonic phonon transmission, strong cross-interfacial electron phonon coupling, or direct electric transmission are required to explain the transport. The TiN-ScN interface conductance is the highest room temperature metal-dielectric conductance ever reported.

  19. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    NARCIS (Netherlands)

    Yuan, Hongtao; Shimotani, Hidekazu; Ye, Jianting; Yoon, Sungjae; Aliah, Hasniah; Tsukazaki, Atsushi; Kawasaki, Masashi; Iwasa, Yoshihiro

    2010-01-01

    The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge

  20. Interface sulfur passivation using H{sub 2}S annealing for atomic-layer-deposited Al{sub 2}O{sub 3} films on an ultrathin-body In{sub 0.53}Ga{sub 0.47}As-on-insulator

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hyun Soo [Department of Materials Science and Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin; Lee, Sang-Moon [High-Performance Device Group, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712 (Korea, Republic of); Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Dae Hyun [Department of Materials Science and Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Department of Advanced Materials Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Kim, Dae Woong [Department of Materials Science and Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Dongsoo [High-Performance Device Group, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712 (Korea, Republic of); Park, Jong-Bong [Department of Advanced Materials Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Won, Jeong Yeon [Analytical Science Group, Computational and Analytical Science Center, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712 (Korea, Republic of); Lee, Myoung-Jae; Cho, Seong-Ho [High-Performance Device Group, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2014-10-01

    Highlights: • ALD Al{sub 2}O{sub 3} films were grown on ultrathin-body In{sub 0.53}Ga{sub 0.47}As substrates for III-V compound-semiconductor-based devices. • Interface sulfur passivation was performed with wet processing using (NH{sub 4}){sub 2}S solution, and dry processing using post-deposition annealing under a H{sub 2}S atmosphere. • Electrical properties of the device were better for (NH{sub 4}){sub 2}S wet-treatment than the PDA under a H{sub 2}S atmosphere. • PDA under a H{sub 2}S atmosphere following (NH{sub 4}){sub 2}S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. - Abstract: Atomic-layer-deposited Al{sub 2}O{sub 3} films were grown on ultrathin-body In{sub 0.53}Ga{sub 0.47}As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH{sub 4}){sub 2}S) solution, and dry processing using post-deposition annealing (PDA) under a H{sub 2}S atmosphere. The PDA under the H{sub 2}S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH{sub 4}){sub 2}S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH{sub 4}){sub 2}S wet-treatment than the PDA under a H{sub 2}S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H{sub 2}S atmosphere following (NH{sub 4}){sub 2}S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.

  1. Brain-computer interface for alertness estimation and improving

    Science.gov (United States)

    Hramov, Alexander; Maksimenko, Vladimir; Hramova, Marina

    2018-02-01

    Using wavelet analysis of the signals of electrical brain activity (EEG), we study the processes of neural activity, associated with perception of visual stimuli. We demonstrate that the brain can process visual stimuli in two scenarios: (i) perception is characterized by destruction of the alpha-waves and increase in the high-frequency (beta) activity, (ii) the beta-rhythm is not well pronounced, while the alpha-wave energy remains unchanged. The special experiments show that the motivation factor initiates the first scenario, explained by the increasing alertness. Based on the obtained results we build the brain-computer interface and demonstrate how the degree of the alertness can be estimated and controlled in real experiment.

  2. Touchfree medical interfaces.

    Science.gov (United States)

    Rossol, Nathaniel; Cheng, Irene; Rui Shen; Basu, Anup

    2014-01-01

    Real-time control of visual display systems via mid-air hand gestures offers many advantages over traditional interaction modalities. In medicine, for example, it allows a practitioner to adjust display values, e.g. contrast or zoom, on a medical visualization interface without the need to re-sterilize the interface. However, when users are holding a small tool (such as a pen, surgical needle, or computer stylus) the need to constantly put the tool down in order to make hand gesture interactions is not ideal. This work presents a novel interface that automatically adjusts for gesturing with hands and hand-held tools to precisely control medical displays. The novelty of our interface is that it uses a single set of gestures designed to be equally effective for fingers and hand-held tools without using markers. This type of interface was previously not feasible with low-resolution depth sensors such as Kinect, but is now achieved by using the recently released Leap Motion controller. Our interface is validated through a user study on a group of people given the task of adjusting parameters on a medical image.

  3. Diffusion between evolving interfaces

    International Nuclear Information System (INIS)

    Juntunen, Janne; Merikoski, Juha

    2010-01-01

    Diffusion in an evolving environment is studied by continuous-time Monte Carlo simulations. Diffusion is modeled by continuous-time random walkers on a lattice, in a dynamic environment provided by bubbles between two one-dimensional interfaces driven symmetrically towards each other. For one-dimensional random walkers constrained by the interfaces, the bubble size distribution dominates diffusion. For two-dimensional random walkers, it is also controlled by the topography and dynamics of the interfaces. The results of the one-dimensional case are recovered in the limit where the interfaces are strongly driven. Even with simple hard-core repulsion between the interfaces and the particles, diffusion is found to depend strongly on the details of the dynamical rules of particles close to the interfaces.

  4. Combinatorial Nano-Bio Interfaces.

    Science.gov (United States)

    Cai, Pingqiang; Zhang, Xiaoqian; Wang, Ming; Wu, Yun-Long; Chen, Xiaodong

    2018-06-08

    Nano-bio interfaces are emerging from the convergence of engineered nanomaterials and biological entities. Despite rapid growth, clinical translation of biomedical nanomaterials is heavily compromised by the lack of comprehensive understanding of biophysicochemical interactions at nano-bio interfaces. In the past decade, a few investigations have adopted a combinatorial approach toward decoding nano-bio interfaces. Combinatorial nano-bio interfaces comprise the design of nanocombinatorial libraries and high-throughput bioevaluation. In this Perspective, we address challenges in combinatorial nano-bio interfaces and call for multiparametric nanocombinatorics (composition, morphology, mechanics, surface chemistry), multiscale bioevaluation (biomolecules, organelles, cells, tissues/organs), and the recruitment of computational modeling and artificial intelligence. Leveraging combinatorial nano-bio interfaces will shed light on precision nanomedicine and its potential applications.

  5. Engineering Musculoskeletal Tissue Interfaces

    Directory of Open Access Journals (Sweden)

    Ece Bayrak

    2018-04-01

    Full Text Available Tissue engineering aims to bring together biomaterials, cells, and signaling molecules within properly designed microenvironments in order to create viable treatment options for the lost or malfunctioning tissues. Design and production of scaffolds and cell-laden grafts that mimic the complex structural and functional features of tissues are among the most important elements of tissue engineering strategy. Although all tissues have their own complex structure, an even more complex case in terms of engineering a proper carrier material is encountered at the tissue interfaces, where two distinct tissues come together. The interfaces in the body can be examined in four categories; cartilage-bone and ligament-bone interfaces at the knee and the spine, tendon-bone interfaces at the shoulder and the feet, and muscle-tendon interface at the skeletal system. These interfaces are seen mainly at the soft-to-hard tissue transitions and they are especially susceptible to injury and tear due to the biomechanical inconsistency between these tissues where high strain fields are present. Therefore, engineering the musculoskeletal tissue interfaces remain a challenge. This review focuses on recent advancements in strategies for musculoskeletal interface engineering using different biomaterial-based platforms and surface modification techniques.

  6. Specification and Design of Electrical Flight System Architectures with SysML

    Science.gov (United States)

    McKelvin, Mark L., Jr.; Jimenez, Alejandro

    2012-01-01

    Modern space flight systems are required to perform more complex functions than previous generations to support space missions. This demand is driving the trend to deploy more electronics to realize system functionality. The traditional approach for the specification, design, and deployment of electrical system architectures in space flight systems includes the use of informal definitions and descriptions that are often embedded within loosely coupled but highly interdependent design documents. Traditional methods become inefficient to cope with increasing system complexity, evolving requirements, and the ability to meet project budget and time constraints. Thus, there is a need for more rigorous methods to capture the relevant information about the electrical system architecture as the design evolves. In this work, we propose a model-centric approach to support the specification and design of electrical flight system architectures using the System Modeling Language (SysML). In our approach, we develop a domain specific language for specifying electrical system architectures, and we propose a design flow for the specification and design of electrical interfaces. Our approach is applied to a practical flight system.

  7. Vertical Gradient Freezing Using Submerged Heater Growth With Rotation and With Weak Magnetic and Electric Fields

    National Research Council Canada - National Science Library

    Bliss, D. F; Holmes, A. M; Wang, X; Ma, N; Iseler, G. W

    2005-01-01

    ...) method utilizing a submerged heater. Electromagnetic stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a weak radial electric current in the melt together with a weak axial magnetic field...

  8. Model of two-dimensional electron gas formation at ferroelectric interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

    2015-07-01

    The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

  9. Universal computer interfaces

    CERN Document Server

    Dheere, RFBM

    1988-01-01

    Presents a survey of the latest developments in the field of the universal computer interface, resulting from a study of the world patent literature. Illustrating the state of the art today, the book ranges from basic interface structure, through parameters and common characteristics, to the most important industrial bus realizations. Recent technical enhancements are also included, with special emphasis devoted to the universal interface adapter circuit. Comprehensively indexed.

  10. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically

  11. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

    Energy Technology Data Exchange (ETDEWEB)

    Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Tikhov, S. V.; Gorshkov, O. N.; Kasatkin, A. P.; Antonov, I. N. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

  12. Interface Input/Output Automata

    DEFF Research Database (Denmark)

    Larsen, Kim Guldstrand; Nyman, Ulrik; Wasowski, Andrzej

    2006-01-01

    Building on the theory of interface automata by de Alfaro and Henzinger we design an interface language for Lynch’s I/O, a popular formalism used in the development of distributed asynchronous systems, not addressed by previous interface research. We introduce an explicit separation of assumptions...... a method for solving systems of relativized behavioral inequalities as used in our setup and draw a formal correspondence between our work and interface automata....

  13. Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 {mu}m operation

    Energy Technology Data Exchange (ETDEWEB)

    Chaqmaqchee, F.A.I. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Mazzucato, S., E-mail: smazzu@essex.ac.uk [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Sun, Y.; Balkan, N. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Physics Department, Yunus Emre Campus 26470, Eskisehir (Turkey); Hugues, M.; Hopkinson, M. [University of Sheffield, Electronic and Electrical Engineering Department, S1 3JD (United Kingdom)

    2012-06-05

    Highlights: Black-Right-Pointing-Pointer We electrically characterised two p-type doped DBRs for 1.3 {mu}m VCSOA applications. Black-Right-Pointing-Pointer Abrupt and graded structures were designed and investigated. Black-Right-Pointing-Pointer Longitudinal and vertical transports were measured as function of temperature. Black-Right-Pointing-Pointer Low series resistivity achieved using the interface composition grading technique. Black-Right-Pointing-Pointer Theoretical model confirmed the obtained results. - Abstract: The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at the interfaces between layers of high and low refractive index inhibits the carrier flow, thus increasing the DBR series resistance. In this work, the electrical characteristics of two p-type doped DBR structures grown on undoped and p-type doped GaAs substrates have been investigated. The DBRs are designed for VCSOAs operating at 1.3 {mu}m and consist of 14-periods of alternating GaAs and Al{sub 0.9}Ga{sub 0.1}As in the first sample and 14-periods of GaAs and Al{sub 0.3}Ga{sub 0.7}As/Al{sub 0.9}Ga{sub 0.1}As in the second one. For the longitudinal transport sample, Hall mobility and sheet carrier density were measured in the temperature range from 77 to 300 K. In the vertical transport sample, current-voltage (I-V) measurements across the DBR layers were carried out at different temperatures in the range between 15 and 300 K. We achieved resistivity reduction in our samples by using an interface composition grading technique aimed at improving the VCSOA characteristics.

  14. Universal quantum interfaces

    International Nuclear Information System (INIS)

    Lloyd, Seth; Landahl, Andrew J.; Slotine, Jean-Jacques E.

    2004-01-01

    To observe or control a quantum system, one must interact with it via an interface. This article exhibits simple universal quantum interfaces--quantum input/output ports consisting of a single two-state system or quantum bit that interacts with the system to be observed or controlled. It is shown that under very general conditions the ability to observe and control the quantum bit on its own implies the ability to observe and control the system itself. The interface can also be used as a quantum communication channel, and multiple quantum systems can be connected by interfaces to become an efficient universal quantum computer. Experimental realizations are proposed, and implications for controllability, observability, and quantum information processing are explored

  15. Cell membrane conformation at vertical nanowire array interface revealed by fluorescence imaging

    International Nuclear Information System (INIS)

    Berthing, Trine; Bonde, Sara; Rostgaard, Katrine R; Martinez, Karen L; Madsen, Morten Hannibal; Sørensen, Claus B; Nygård, Jesper

    2012-01-01

    The perspectives offered by vertical arrays of nanowires for biosensing applications in living cells depend on the access of individual nanowires to the cell interior. Recent results on electrical access and molecular delivery suggest that direct access is not always obtained. Here, we present a generic approach to directly visualize the membrane conformation of living cells interfaced with nanowire arrays, with single nanowire resolution. The method combines confocal z-stack imaging with an optimized cell membrane labelling strategy which was applied to HEK293 cells interfaced with 2–11 μm long and 3–7 μm spaced nanowires with various surface coatings (bare, aminosilane-coated or polyethyleneimine-coated indium arsenide). We demonstrate that, for all commonly used nanowire lengths, spacings and surface coatings, nanowires generally remain enclosed in a membrane compartment, and are thereby not in direct contact with the cell interior. (paper)

  16. The relationship between perceived usability of a beautiful interface and of an ugly interface

    OpenAIRE

    Mohammed, Naitullah; Syed.Mohammed, Mahamood Ur Rahman

    2012-01-01

    The relationship between the perceived usability of a beautiful interface and of an ugly interface is analyzed in this study. This study correlates the visual aesthetics of the website with perceived usability. This research is performed to know the significance of visual aesthetics on perceived usability. A website is designed with two interfaces. One interface is designed by following design guidelines with respect to usability and the other interface is designed without following guideline...

  17. MER SPICE Interface

    Science.gov (United States)

    Sayfi, Elias

    2004-01-01

    MER SPICE Interface is a software module for use in conjunction with the Mars Exploration Rover (MER) mission and the SPICE software system of the Navigation and Ancillary Information Facility (NAIF) at NASA's Jet Propulsion Laboratory. (SPICE is used to acquire, record, and disseminate engineering, navigational, and other ancillary data describing circumstances under which data were acquired by spaceborne scientific instruments.) Given a Spacecraft Clock value, MER SPICE Interface extracts MER-specific data from SPICE kernels (essentially, raw data files) and calculates values for Planet Day Number, Local Solar Longitude, Local Solar Elevation, Local Solar Azimuth, and Local Solar Time (UTC). MER SPICE Interface was adapted from a subroutine, denoted m98SpiceIF written by Payam Zamani, that was intended to calculate SPICE values for the Mars Polar Lander. The main difference between MER SPICE Interface and m98SpiceIf is that MER SPICE Interface does not explicitly call CHRONOS, a time-conversion program that is part of a library of utility subprograms within SPICE. Instead, MER SPICE Interface mimics some portions of the CHRONOS code, the advantage being that it executes much faster and can efficiently be called from a pipeline of events in a parallel processing environment.

  18. Human-machine interface upgrade

    International Nuclear Information System (INIS)

    Kropik, M.; Matejka, K.; Sklenka, L.; Chab, V.

    2002-01-01

    The article describes a new human-machine interface that was installed at the VR-1 training reactor. The human-machine interface upgrade was completed in the summer 2001. The interface was designed with respect to functional, ergonomic and aesthetic requirements. The interface is based on a personal computer equipped with two displays. One display enables alphanumeric communication between the reactor operator and the nuclear reactor I and C. The second display is a graphical one. It presents the status of the reactor, principal parameters (as power, period), control rods positions, course of the reactor power. Furthermore, it is possible to set parameters, to show the active core configuration, to perform reactivity calculations, etc. The software for the new human-machine interface was produced with the InTouch developing tool of the Wonder-Ware Company. It is possible to switch the language of the interface between Czech and English because of many foreign students and visitors to the reactor. Microcomputer based communication units with proper software were developed to connect the new human-machine interface with the present reactor I and C. The new human-machine interface at the VR-1 training reactor improves the comfort and safety of the reactor utilisation, facilitates experiments and training, and provides better support for foreign visitors. (orig.)

  19. Modification of Nafion Membranes by IL-Cation Exchange: Chemical Surface, Electrical and Interfacial Study

    Directory of Open Access Journals (Sweden)

    V. Romero

    2012-01-01

    A study of time evolution of the impedance curves measured in the system “IL aqueous solution/Nafion-112 membrane/IL aqueous solution” was also performed. This study allows us monitoring the electrical changes associated to the IL-cation incorporation in both the membrane and the membrane/IL solution interface, and it provides supplementary information on the characteristic of the Nafion/DTA+ hybrid material. Moreover, the results also show the significant effect of water on the electrical resistance of the Nafion-112/IL-cation-modified membrane.

  20. Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dan [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Department of Physics and Institute of Solid-state electronics physical, Ningbo University, Ningbo 315211 (China); Sheng, Jiang, E-mail: shengjiang@nimte.ac.cn; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun, E-mail: jichun.ye@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2016-07-25

    Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (J{sub sc}). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (V{sub oc}). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.