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Sample records for rf-sputtering tonkie plenki

  1. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  2. Influence of R.F. sputter parameters on the magnetic orientation of Co-Cr layers

    NARCIS (Netherlands)

    Lodder, J.C.; Wielinga, T.

    1984-01-01

    Co-Cr layers for the perpendicular recording mode were deposited by means of RF-sputtering. The most important sputter parameters, i.e. the RF sputter high voltage VRF, the argon pressure Par and the substrate holder temperature Tsh, gave an optimum value for perpendicular orientation of the

  3. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  4. Influence of the Preparation Method, DC and RF Sputtering, on theProperties of Thin Film

    International Nuclear Information System (INIS)

    Tri-Mardji-Atmono; Widdi-Usada; Agus-Purwadi; Yunanto; Edi-Suharyadi

    2000-01-01

    The research on the influence of preparation method DC- and RF Sputteringon the properties of Fe-thin films has been done. The measurement with EDAXshows. that the Fe-content of RF-sputtered film increased with the increasingof self-bias voltage in the range of 850 - 1000 V. The observation ofmicrostructure using SEM shows a more homogeneity of thin film and smallergrain size with the increasing of the self-bias voltage. On the other hand,thin films with inhomogeneity of the structure were produced by DC-Sputteringprocess, indicated by the non continuity and the spread of theglow-discharge. Based on the investigation with X-ray diffraction, thin filmprepared by RF-Sputtering was amorphous, while the film produced by theDC-Sputtering is known as crystal structure. Preparation using DC-voltageshows continual sputtering-process at the voltage of 3000 V betweenelectrode. (author)

  5. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  6. Substrate dependent hierarchical structures of RF sputtered ZnS films

    Science.gov (United States)

    Chalana, S. R.; Mahadevan Pillai, V. P.

    2018-05-01

    RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

  7. Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss

    International Nuclear Information System (INIS)

    Xie Guofeng; Wang Dewu; Ying Chuntong

    2005-01-01

    One-dimensional ions extraction and collection using the RF resonance method is studied by PIC-MCC simulation. The energy and angle distribution of extracted ions is recorded and the sputtering loss is calculated. The results show that compared with parallel electrode method, RF resonance method has advantages such as shorter extraction time, lower collision loss and sputtering loss and higher collection ratio; the extraction time and collision loss are decreased with increasing extraction voltage, but the sputtering loss increases and collection ratio decreases; collision loss is decreased with increasing magnetic field, but the sputtering loss increases and collection ratio decreases. (authors)

  8. Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

    2016-12-15

    Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

  9. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  10. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    International Nuclear Information System (INIS)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-01-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ∼165 deg. with a very low contact angle hysteresis of ∼3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  11. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Science.gov (United States)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-12-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon ®). Scanning electron microscopy images showed a " bird's nest"-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ˜165° with a very low contact angle hysteresis of ˜3°. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  12. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  13. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Energy Technology Data Exchange (ETDEWEB)

    Jafari, R., E-mail: rjafari@uqac.ca [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada); Menini, R.; Farzaneh, M. [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada)

    2010-12-15

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of {approx}165 deg. with a very low contact angle hysteresis of {approx}3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF{sub 3} and CF{sub 2} groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  14. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  15. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  17. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  18. Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

    CERN Document Server

    Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

    1999-01-01

    Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

  19. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  20. Preparation and Characterization of FC Films Coated on PET Substrates by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Huang Mei-lin

    2018-01-01

    Full Text Available Fluorocarbon (FC films were prepared on polyethylene terephthalate (PET plates and PET fabrics respectively by a radiofrequency (RF magnetron sputtering technique using polytetrafluoroethylene (PTFE as a target. Scanning electron microscope and X-ray photoelectron spectroscopy were used to investigate the morphology, structure and composition of the obtained FC films. The hydrophobicity and uvioresistant properties of the FC film coated fabric were studied. The results show that the FC films were successfully deposited on the PET substrates by a RF magnetron sputtering. The deposited films are made up of four components -CF3, -CF2-, CF- and -C-. The proportions of the four components and surface morphologies of the deposited films vary with the sputtering conditions. Compared with the original fabric samples, the hydrophobicity of the FC film coated fabrics is quite good and improved significantly.

  1. RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

    2009-01-01

    Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

  2. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  3. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  4. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  5. Bioactivity and Surface Reactivity of RF-sputtered Calcium Phosphate Thin Films

    NARCIS (Netherlands)

    Wal, Edwin van der

    2003-01-01

    Calcium phosphates (CaP) are known to be bioactive, i.e. able to bond to bone. This makes CaPs very suitable to be aplied as thin coatings on bone-implants. In this work we studied the physicochemical behaviour of CaP coatings applied with radio frequency (RF) magnetron sputtering, a deposition

  6. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  7. Copper deposition on fabrics by rf plasma sputtering for medical applications

    International Nuclear Information System (INIS)

    Segura, G; Guzmán, P; Barrantes, Y; Navarro, G; Asenjo, J; Guadamuz, S; Vargas, VI; Zuñiga, P; Chaves, S; Chaves, J

    2015-01-01

    The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10 −2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms. (paper)

  8. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  9. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  10. Urea impedimetric biosensor based on reactive RF magnetron sputtered zinc oxide nanoporous transducer

    International Nuclear Information System (INIS)

    Mozaffari, Sayed Ahmad; Rahmanian, Reza; Abedi, Mohammad; Amoli, Hossein Salar

    2014-01-01

    Graphical abstract: - Highlights: • Application and optimization of reactive RF magnetron sputtering for homogeneous nanoporous ZnO thin film formation. • Exploiting nanoporous ZnO thin film as a good porous framework with large surface area/volume for having stable immobilized enzyme with minimum loss of activity. • Application of impedimetric assessment for urea biosensing due to its rapidity, sensitivity, and repeatability. - Abstract: Uniform sputtered nanoporous zinc oxide (Nano-ZnO) thin film on the conductive fluorinated-tin oxide (FTO) layer was applied to immobilize urease enzyme (Urs) for urea detection. Highly uniform nanoporous ZnO thin film were obtained by reactive radio frequency (RF) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface morphology and roughness of ZnO thin film by field emission-scanning electron microscopy (FE-SEM) exhibits cavities of nanoporous film as an effective biosensing area for enzyme immobilization. Step by step monitoring of FTO/Nano-ZnO/Urs biosensor fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated FTO/Nano-ZnO/Urs biosensor was used for urea determination using EIS experiments. The impedimetric results show high sensitivity for urea detection within 0.83–23.24 mM and limit of detection as 0.40 mM

  11. RF sputtered HgCdTe films for tandem cell applications

    International Nuclear Information System (INIS)

    Wang, S.L.; Lee, S.H.; Gupta, A.; Compaan, A.D.

    2004-01-01

    Polycrystalline Hg 1-x Cd x Te films were investigated for their potential as bottom cells of a CdTe-based tandem solar cell. The films were deposited by RF sputtering from a cold pressed target containing 30% HgTe+70% CdTe. The as-deposited films were highly resistive with (111) preferred orientation and a bandgap of ∝1.0 eV. Various thermal treatment schemes were investigated under different conditions of ambient and temperature to reduce the resistivity. The film properties were analyzed using infrared transmission spectra, energy dispersive X-ray spectra and X-ray diffraction. N doped p-HgCdTe films were also prepared by reactive sputtering in a N 2 /Ar ambient. P-n junction solar cells were fabricated with CdS films as the heterojunction partner. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Plasma polymer films rf sputtered from PTFE under various argon pressures

    Czech Academy of Sciences Publication Activity Database

    Stelmashuk, Vitaliy; Biederman, H.; Slavinská, D.; Zemek, Josef; Trchová, Miroslava

    2005-01-01

    Roč. 77, č. 2 (2005), s. 131-137 ISSN 0042-207X R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) OC 527.90 Grant - others:EUREKAΣ2080(XE) OE57 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20430508 Keywords : RF sputtering * PTFE * fluorcarbon plasma polymers * thin film * teflon * deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.909, year: 2005

  13. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  14. RF Magnetron Sputtering Coating Of Hydroxyapatite On Alkali Solution Treated Titanate Nanorods

    Directory of Open Access Journals (Sweden)

    Lee K.

    2015-06-01

    Full Text Available Hydroxyapatite (HA is a material with outstanding biocompatibility. It is chemically similar to natural bone tissue, and has therefore been favored for use as a coating material for dental and orthopedic implants. In this study, RF magnetron sputtering was applied for HA coating. And Alkali treatment was performed in a 5 M NaOH solution at 60°C. The coated HA thin film was heat-treated at a range of temperatures from 300 to 600°C. The morphological characterization and crystal structures of the coated specimens were then obtained via FE-SEM, XRD, and FT-IR. The amorphous thin film obtained on hydrothermally treated nanorods transformed into a crystalline thin film after the heat treatment. The change in the phase transformation, with an enhanced crystallinity, showed a reduced wettability. The hydrothermally treated nanorods with an amorphous thin film, on the other hand, showed an outstanding wettability. The HA thin film perpendicularly coated the nanorods in the upper and inner parts via RF magnetron sputtering, and the FT-IR results confirmed that the molecular bonding of the coated film had an HA structure.

  15. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

    International Nuclear Information System (INIS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

    2016-01-01

    Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

  16. Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering

    CERN Document Server

    Nose, M; Zhou, M; Mae, T; Meshii, M

    2002-01-01

    ZrN and ZrSiN films were prepared in an rf sputtering apparatus that has a pair of targets facing each other (referred to as the facing target--type rf sputtering). Films were deposited on silicon wafers without bias application or substrate heating in order to examine only the effect of silicon addition to the transition metal nitride films. The contents of zirconium, nitrogen, and silicon of the films were determined with an electron probe microanalyzer. The transmission electron microscopy studies were carried out in addition to x-ray diffraction. For the high resolution transmission electron microscopy observation, the field emission type transmission electron microscope was used, which provides a point-to-point resolution of 0.1 nm. The samples were observed both parallel and perpendicular to the film surface, which were plane and cross sectional views, respectively. In order to investigate the relationship between the mechanical properties and microstructure of films, the hardness was measured by a nano...

  17. Fabrication and properties of yttrium doped barium titanate film by RF sputtering

    International Nuclear Information System (INIS)

    Igarashi, H.; Yuasa, M.; Okazaki, K.

    1985-01-01

    Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

  18. Some magnetic and magnetoresistive properties of RF-sputtered thin NiFe-Si films.

    Science.gov (United States)

    Vatskicheva, M.; Vatskichev, Ly.; Dimitrov, I.; Kunev, B.

    The galvanomagnetic properties and some structural peculiarities of rf-sputtered alloy films (NI80Fe20)100-xSix at 0 < x < 30 at. % were studied and compared with the corresponding properties of evaporated films of the same thickness and composition. The content of silicon increased with the increasing of the velocity of deposition and led to the amorphousation of the films. Coercivity decreased with the velocity of growth but it did not depend on the thickness and on the velocity of film deposition. The magnetoresistance ratio Dr/r of the sputtered films was about three times higher then that of the evaporated films.

  19. Growth and characterization of high quality ZnS thin films by RF sputtering

    Science.gov (United States)

    Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

    2012-06-01

    High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

  20. Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

    Science.gov (United States)

    Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

    2015-01-01

    For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

  1. Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Sea-Fue Wang

    2014-01-01

    Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

  2. Properties of RF sputtered zinc oxide based thin films made from different targets

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Instituto de Energias Renovables, Madrid (Spain)

    1994-01-01

    The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn, ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al{sub 2}O{sub 3} (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380{sup o}C with E{sub g}=3.25-3.35 eV and {rho}=4.8x10{sup -4} {Omega}cm. Reduction of substrate temperature at 200{sup o}C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al{sub 2}O{sub 3} targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1x10{sup -3} {Omega}cm respectively

  3. Dispersive transport in hydrogenated a-Si prepared by rf sputtering

    International Nuclear Information System (INIS)

    Shirafuji, Junji; Kim, Gi-Il; Sawadsaringkarn, M.; Inuishi, Yoshio

    1981-01-01

    Time-of-flight measurement of photo-excited carriers has been carried out in hydrogenated a-Si deposited by rf sputtering method. Both electrons and holes show highly dispersive transport. The electron drift mobility near room temperature ranges from 5 x 10 -3 to 4 x 10 -5 cm 2 /V.s, much lower than that of GD samples, and the activation energy is about 0.3 eV. The value of the hole mobility is comparable with that in GD specimens, but its activation energy is about 0.2 eV which is about half of that observed in GD a-Si. (author)

  4. The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

    Directory of Open Access Journals (Sweden)

    Accarat Chaoumead

    2012-01-01

    Full Text Available Transparent conductive titanium-doped indium oxide (ITiO films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4  Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4  Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

  5. Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

    1994-01-01

    The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

  6. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    International Nuclear Information System (INIS)

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  7. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  8. Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

    International Nuclear Information System (INIS)

    Porntheeraphat, S.; Nukeaw, J.

    2008-01-01

    The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

  9. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  10. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  11. Metastable bcc Fe-Mn alloys produced by rf sputtering

    International Nuclear Information System (INIS)

    Sumiyama, Kenji; Kadono, Masaru; Nakamura, Yoji

    1981-01-01

    Fe sub(1-x)Mn sub(x) alloy films obtained by rf sputtering technique have been investigated by X-ray diffraction, magnetization and Moessbauer effect measurements. The single bcc phase extends up to about x = 0.2, while a bcc-fcc mixed phase appears for x = 0.2 - 0.26. The lattice constants of the bcc phase are about 0.5% larger than those of the bulk specimens. The magnetization decreases monotonically with increasing x in the bcc phase, while it decreases sharply in the bcc-fcc mixed phase. These results are consistent with the Moessbauer spectra of these alloy films. The volume fraction of bcc and fcc phases has been estimated from Moessbauer analyses as well as magnetization measurements. (author)

  12. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  13. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-15

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  14. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    International Nuclear Information System (INIS)

    Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-01-01

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  15. Thin films preparation of the Ti-Al-O system by rf-sputtering

    International Nuclear Information System (INIS)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J.; Manaud, J. P.; Lahaye, M.; Munoz S, J.

    2010-01-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti 3 Al targets in a sputtering chamber with an Ar-O 2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  16. Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-01-01

    Full Text Available The ceramic target of Indium tinoxide (ITO (90% In2O3-10%SnO2 has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD, field emission scanning electron microscope (FESEM, atomic force microscope (AFM, UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222 and (400 of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.

  17. Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hsu Cheng-Shing; Huang Cheng-Liang

    2001-01-01

    Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

  18. Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Labitzke, R.; Adolphi, B.; Jastrabík, Lubomír; Adámek, Petr; Drahokoupil, Jan; Hubička, Zdeněk; Kiselev, D.A.; Kholkin, A. L.; Gerlach, G.; Dejneka, Alexandr

    2011-01-01

    Roč. 205, č. 2 (2011), S241-S244 ISSN 0257-8972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed DC reactive sputtering * RF reactive sputtering * complex oxide film deposition * polymer substrate Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  19. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  20. Epitaxial growth of "infinite layer” thin films and multilayers by rf magnetron sputtering

    OpenAIRE

    Fàbrega, L.; Koller, E.; Triscone, J. M.; Fischer, Ø.

    2017-01-01

    We report on the preparation and characterization of epitaxial ACuO2 (A = Sr, Ca, Ba) thin films and multilayers with the so- called infinite layer (IL) structure, by rf magnetron sputtering. Films and multilayers without Ba have a remarkable crystal quality, whereas those containing this large ion are often multiphased and unstable. In spite of the excellent crystalline quality of these samples, obtaining thin films having both IL structure and displaying superconducting properties has not s...

  1. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    International Nuclear Information System (INIS)

    Zapata-Navarro, A.; Marquez-Herrera, A.; Cruz-Jauregui, M.P.; Calzada, M.L.

    2005-01-01

    In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Electrical insulation properties of RF-sputtered LiPON layers towards electrochemical stability of lithium batteries

    OpenAIRE

    Vieira, E. M. F.; Ribeiro, J. F.; Silva, Maria Manuela; Barradas, N. P.; Alves, E.; Alves, A.; Correia, M. R.; Gonçalves, L. M.

    2016-01-01

    Electrochemical stability, moderate ionic conductivity and low electronic conductivity make the lithium phosphorous oxynitride (LiPON) electrolyte suitable for micro and nanoscale lithium batteries. The electrical and electrochemical properties of thin-film electrolytes can seriously compromise full battery performance. Here, radio-frequency (RF)-sputtered LiPON thin films were fabricated in nitrogen plasma under different working pressure conditions. With a slight decrease in ...

  3. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zapata-Navarro, A.; Marquez-Herrera, A. [CICATA-IPN, Km. 14.5 Carretera Tampico-Puerto Ind. Altamira, Altamira Tamaulipas 89600 (Mexico); Cruz-Jauregui, M.P. [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada B.C. 22800 (Mexico); Calzada, M.L. [ICMM (CSIC) Madrid, Cantoblanco Madrid 28049 (Spain)

    2005-08-01

    In this work, we present the variation of the ferroelectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by RF co-sputtering with 0{<=}x{<=}1. The co-sputtering was done using a single magnetron with BaTiO{sub 3}/SrTiO{sub 3} targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

    2006-01-01

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

  5. RF magnetron sputtered La3+-modified PZT thin films: Perovskite phase stabilization and properties

    International Nuclear Information System (INIS)

    Singh, Ravindra; Goel, T.C.; Chandra, Sudhir

    2008-01-01

    In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films in pure perovskite phase by RF magnetron sputtering. Various deposition parameters such as target-to-substrate spacing, sputtering gas composition, deposition temperature, post-deposition annealing temperature and time have been optimized to obtain PLZT films in pure perovskite phase. The films prepared in pure argon at 100 W RF power without external substrate heating exhibit pure perovskite phase after rapid thermal annealing (RTA) at 700 deg. C for 5 min. The film prepared at 225 deg. C substrate temperature also exhibits pure perovskite phase after RTA at 700 deg. C for 2 min. SIMS depth profile performed on one of the pure perovskite films (RTA at 700 deg. C for 5 min) shows very good stoichiometric uniformity of all elements of PLZT. The surface morphology of the films was examined using SEM and AFM. The dielectric, ferroelectric and electrical properties of the pure perovskite films were also investigated in detail. The remanent polarization for the films annealed at 700 deg. C for 5 and 2 min were found to be 15 and 13.5 μC cm -2 , respectively. Both the films have high DC resistivity of the order of 10 11 Ω cm at the electric field of ∼80 kV cm -1

  6. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  7. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  8. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  9. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R. [Advanced Materials Research Centre (AMREC), SIRIM Berhad, Lot 34, Jalan Hi- Tech 2/3, Kulim Hi-Tech Park, 09000 Kulim (Malaysia)

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  10. Type II textured molybdenum disulphide films produced by direct vapour transport and rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Bohlken, S.F.; Lemon, K.D.; Jakovidis, G.; Taheri, E.H.

    1999-01-01

    Full text: Molybdenum disulphide (MoS 2 ) is one of the few naturally occurring Layered Transition Metal Dichalcogenides and is the primary source for elemental molybdenum. It displays exceptional lubrication performance in both vacuum and atmospheric conditions over a wide temperature range. An important emerging application of MoS 2 and related materials is photovoltaics. Films of MoS 2 exhibit several morphologies described by the orientation of platelets with respect to the substrate. Films with platelets perpendicular or parallel to the substrate are referred to by their morphology, which is type-I or type-II respectively. Production of exclusive type-II films is highly desirable in applications involving lubrication and photovoltaics. For example, type-II morphology reduces friction and minority carrier recombination centres, thus improving tribological and photovoltaic performance. We have successfully produced type-II films using both direct vapour transport and rf-magnetron sputtering Continuous polycrystalline films (∼ 10 μm thick) grown in our laboratory using vapour transport have typical areas 1000 mm 2 . A novel ejecta filtration technique was applied to rf-magnetron sputtering. Films produced using this approach retain exclusive type-II morphology at thicknesses where type-I would normally be observed (∼ 200nm)

  11. Growth of polycrystalline Pr_2NiO_4_+_δ coating on alumina substrate by RF magnetron co-sputtering from composite targets

    International Nuclear Information System (INIS)

    Sediri, A.; Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B.; Del Campo, L.; Echegut, P.; Laffez, P.

    2016-01-01

    Polycrystalline Pr_2NiO_4_+_δ coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr_2NiO_4_+_δ phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm"-"1 showed an emissivity of ε ≈ 0.8. - Highlights: • Pr_2NiO_4_+_δ coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

  12. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    Science.gov (United States)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  13. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  14. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  15. Physical–chemical and biological behavior of an amorphous calcium phosphate thin film produced by RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Santos, Euler A. dos; Moldovan, Simona; Mateescu, Mihaela; Faerber, Jacques; Acosta, Manuel; Pelletier, Hervé; Anselme, Karine; Werckmann, Jacques

    2012-01-01

    This work evaluates the thermal reactivity and the biological reactivity of an amorphous calcium phosphate thin film produced by radio frequency (RF) magnetron sputtering onto titanium substrates. The analyses showed that the sputtering conditions used in this work led to the deposition of an amorphous calcium phosphate. The thermal treatment of this amorphous coating in the presence of H 2 O and CO 2 promoted the formation of a carbonated HA crystalline coating with the entrance of CO 3 2− ions into the hydroxyl HA lattice. When immersed in culture medium, the amorphous and carbonated coatings exhibited a remarkable instability. The presence of proteins increased the dissolution process, which was confirmed by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Moreover, the carbonated HA coating induced precipitation independently of the presence of proteins under dynamic conditions. Despite this surface instability, this reactive calcium phosphate significantly improved the cellular behavior. The cell proliferation was higher on the Ticp than on the calcium phosphate coatings, but the two coatings increased cellular spreading and stress fiber formation. In this sense, the presence of reactive calcium phosphate coatings can stimulate cellular behavior. - Highlights: ► Functionalization of Ti with reactive CaP thin film by RF-magnetron sputtering. ► De-hydroxylation facilitating the insertion of CO 3 2− into the HA lattice. ► High surface reactivity in the presence of culture medium. ► Cell behavior improved by the presence of reactive films.

  16. Recent Developments in R.F. Magnetron Sputtered Thin Films for pH Sensing Applications—An Overview

    OpenAIRE

    D. K. Maurya; A. Sardarinejad; K. Alameh

    2014-01-01

    pH sensors are widely used in chemical and biological applications. Metal oxides-based pH sensors have many attractive features including insolubility, stability, mechanical strength, electrocatalyst and manufacturing technology. Various metal oxide thin films prepared by radio frequency (R.F.) magnetron sputtering have attractive features, including high pH sensitivity, fast response, high resolution, good stability and reversibility as well as potential for measuring pH under conditions th...

  17. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  18. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  19. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  20. Electrical resistivity of sputtered molybdenum films

    International Nuclear Information System (INIS)

    Nagano, J.

    1980-01-01

    The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

  1. Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

    Science.gov (United States)

    Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

    2009-03-01

    The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

  2. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  3. Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, O; Hanus, J; Choukourov, A; Kousal, J; SlavInska, D; Biederman, H, E-mail: ondrej.kylian@gmail.co [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Prague 8, 180 00 (Czech Republic)

    2009-07-21

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH{sub 2}/C value of 18% was observed in the N{sub 2}/H{sub 2} discharge, which leads to the surface exhibiting a high rate of protein adsorption. (fast track communication)

  4. Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

    International Nuclear Information System (INIS)

    Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

    1996-01-01

    Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

  5. Growth of polycrystalline Pr{sub 2}NiO{sub 4+δ} coating on alumina substrate by RF magnetron co-sputtering from composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Sediri, A., E-mail: amal.sediri@univ-tours.fr [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Del Campo, L.; Echegut, P. [CNRS, UPR 3079 CEMHTI, 45071 Orléans Cedex 2 (France); Laffez, P. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France)

    2016-02-01

    Polycrystalline Pr{sub 2}NiO{sub 4+δ} coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr{sub 2}NiO{sub 4+δ} phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm{sup -1} showed an emissivity of ε ≈ 0.8. - Highlights: • Pr{sub 2}NiO{sub 4+δ} coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

  6. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  7. Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Sahoo, A.K.; Liu, C.Y.

    2015-12-01

    The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50 W, 60 W and 70 W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70 W power deposited a-IGZO film. It was 6° for the 60 W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25 ms and 2.96 ms, respectively. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment control cell. - Highlights: • Radio-frequency power of indium gallium zinc oxide film deposition was studied. • The oblique deposition technique was used to prepare the alignment layers. • The liquid crystal pretilt angle was about 13° using 70 W. • The corresponding liquid crystal cells exhibited fast response time at 4.21 ms. • The cells showed low threshold voltage of 1.78 V and excellent contrast ratio.

  8. Influence of RF power on the properties of sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-07-15

    Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. A High-Intensity, RF Plasma-Sputter Negative Ion Source

    International Nuclear Information System (INIS)

    Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A.; Zhang, T.

    1999-01-01

    A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, - (610 microA); F - (100 microA); Si - (500 microA); S - (500 microA); P - (125 microA); Cl - (200 microA); Ni - (150 microA); Cu - (230 microA); Ge - (125 microA); As - (100 microA); Se - (200 microA); Ag - (70 microA); Pt - (125 microA); Au - (250 microA). The normalized emittance var e psilon n of the source at the 80% contour is: var e psilon n = 7.5 mm.mrad.(MeV) 1/2 . The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report

  10. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  11. Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

    2015-11-01

    Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

  12. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  13. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    International Nuclear Information System (INIS)

    Matyash, K; Froehlich, M; Kersten, H; Thieme, G; Schneider, R; Hannemann, M; Hippler, R

    2004-01-01

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed

  14. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Matyash, K [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Froehlich, M [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Kersten, H [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Thieme, G [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Schneider, R [Max-Planck-Institut fuer Plasmaphysik, Teilinstitut Greifswald, Wendelsteinstrasse 1, 17489 Greifswald (Germany); Hannemann, M [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Hippler, R [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany)

    2004-10-07

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed.

  15. The pH Sensing Properties of RF Sputtered RuO2 Thin-Film Prepared Using Different Ar/O2 Flow Ratio

    Directory of Open Access Journals (Sweden)

    Ali Sardarinejad

    2015-06-01

    Full Text Available The influence of the Ar/O2 gas ratio during radio frequency (RF sputtering of the RuO2 sensing electrode on the pH sensing performance is investigated. The developed pH sensor consists in an RF sputtered ruthenium oxide thin-film sensing electrode, in conjunction with an electroplated Ag/AgCl reference electrode. The performance and characterization of the developed pH sensors in terms of sensitivity, response time, stability, reversibility, and hysteresis are investigated. Experimental results show that the pH sensor exhibits super-Nernstian slopes in the range of 64.33–73.83 mV/pH for Ar/O2 gas ratio between 10/0–7/3. In particular, the best pH sensing performance, in terms of sensitivity, response time, reversibility and hysteresis, is achieved when the Ar/O2 gas ratio is 8/2, at which a high sensitivity, a low hysteresis and a short response time are attained simultaneously.

  16. Morphology, optical and electrical properties of Cu-Ni nanoparticles in a-C:H prepared by co-deposition of RF-sputtering and RF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Ghodselahi, T., E-mail: ghodselahi@ipm.ir [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Vesaghi, M.A. [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran (Iran, Islamic Republic of); Gelali, A.; Zahrabi, H.; Solaymani, S. [Young Researchers Club, Islamic Azad University, Kermanshah Branch, Kermanshah (Iran, Islamic Republic of)

    2011-11-01

    We report optical and electrical properties of Cu-Ni nanoparticles in hydrogenated amorphous carbon (Cu-Ni NPs - a-C:H) with different surface morphology. Ni NPs with layer thicknesses of 5, 10 and 15 nm over Cu NPs - a-C:H were prepared by co-deposition of RF-sputtering and RF-Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) from acetylene gas and Cu and Ni targets. A nonmetal-metal transition was observed as the thickness of Ni over layer increases. The surface morphology of the sample was described by a two dimensional (2D) Gaussian self-affine fractal, except the sample with 10 nm thickness of Ni over layer, which is in the nonmetal-metal transition region. X-ray diffraction profile indicates that Cu NPs and Ni NPs with fcc crystalline structure are formed in these films. Localized Surface Plasmon Resonance (LSPR) peak of Cu NPs is observed around 600 nm in visible spectra, which is widen and shifted to lower wavelengths as the thickness of Ni over layer increases. The variation of LSPR peak width correlates with conductivity variation of these bilayers. We assign both effects to surface electron delocalization of Cu NPs.

  17. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  18. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  19. The Effect of Ar/O2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System

    Science.gov (United States)

    Ahn, Kwang-Soon; Nah, Yoon-Chae; Yum, Jun-Ho; Sung, Yung-Eun

    2002-02-01

    The effect of Ar:O2 ratio on the electrochromic properties and the response time of NiO grown by RF sputtering were investigated by in situ transmittance measurements with continuous potential cycling and pulse potential cycling. The transmittance difference, coloration efficiency, memory effect, and cycling stability were all found to be independent of the Ar:O2 ratio. However, the transmittance of the as-deposited NiO as well as the response time were significantly affected. This may be attributed to the excess of oxygen occupied interstitial sites in the sputtered NiO that could result in the generation of Ni3+ ions and interference with proton intercalation/deintercalation.

  20. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  1. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  2. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  3. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  4. Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrode

    International Nuclear Information System (INIS)

    Wada, M.; Nakano, J.; Yanagawa, F.

    1985-01-01

    It is observed that strong rf sputtering of the Pb-alloy base electrodes causes the junctions to trap magnetic vortices and thus induces Josephson current (I/sub J/) suppression. Trapping begins to occur when the rf sputtering that removes the native thermal oxide on the base electrode is carried out prior to rf plasma oxidation. Observed large I/sub J/ suppression is presumably induced by the concentration of vortices into the sputtered area upon cooling the sample below the transition temperature. This suggests a new method of the circumvention of the vortex trapping by strongly rf sputtering the areas of the electrode other than the junction areas

  5. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  6. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  7. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  8. Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

    2006-01-01

    The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

  9. Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

    International Nuclear Information System (INIS)

    Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

    2010-01-01

    Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

  10. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  11. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  12. Surface characteristics of hydroxyapatite/titanium composite layer on the Ti-35Ta-xZr surface by RF and DC sputtering

    International Nuclear Information System (INIS)

    Kim, Won-Gi; Choe, Han-Cheol

    2011-01-01

    The purpose of this study was to investigate the surface characteristics of hydroxyapatite (HA)/titanium (Ti) composite layer on the Ti-35Ta-xZr alloy surface by radio frequency (RF) and direct current (DC) sputtering for dental application. The magnetron sputtered deposition for the HA was performed in the RF mode and for the Ti in the DC mode. Microstructures of the alloys were examined by optical microscopy (OM) and x-ray diffractometer (XRD). Surface characteristics of coated film was investigated by field-emission scanning electron microscope (FE-SEM) equipped with an energy dispersive x-ray spectrometer (EDS), and XRD. Microstructures of the Ti-35Ta-xZr alloys were changed from α'' phase to β phase, and changed from a needle-like structure to an equiaxed structure with increasing Zr content. From the results of polarization behavior in the Ti-35Ta-15Zr alloy, HA/Ti composite layer showed the good corrosion resistance compared to Ti single layer. The results of alternating current (AC) impedance test indicated that the presence of ha coating acted as a stable barrier in increasing the corrosion resistance.

  13. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  14. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sin, N.D.M.; Rusop, M.

    2011-01-01

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  15. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Science.gov (United States)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  16. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  17. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  18. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  19. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  20. Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

    International Nuclear Information System (INIS)

    Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

    1992-01-01

    This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

  1. Dependence of RF power on the content and configuration of hydrogen in amorphous hydrogenated silicon by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Ushita, K; Mogi, K; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Infrared absorption spectra at stretching bands of Si-H were investigated in hydrogenated amorphous silicon fabricated by reactive sputtering in the atmosphere of Ar and H/sub 2/ (10 mole%) at various input rf powers in the range from 0.8 to 3.8 W/cm/sup 2/. Hydrogen content mainly due to the configuration of Si=H/sub 2/ in the film increased with the decreasing rf power, as the deposition rate was decreased. On the other hand, the quantity of the monohydride (Si-H) configuration depended less on the power. Attachment of hydrogen molecules onto the fresh and reactive surface of silicon deposited successively was proposed for possible process of hydrogen incusion into amorphous silicon resulting in Si=H/sub 2/ configuration. The photoconductivity increased as the input power became higher, when the deposition rate also increased linearly with the power.

  2. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

    International Nuclear Information System (INIS)

    Mahmodi, H; Hashim, M R

    2017-01-01

    In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

  3. Photocatalytic Activity of TiO2 Thin Films Obtained by the Sputtering RF in Wastewater

    Science.gov (United States)

    Cardona Bedoya, Jairo Armando; Sanchez Velandia, Wilmer Asmed; Delgado Rosero, Miguel Iban; Florido Cuellar, Alex Enrique; Zelaya Angel, Orlando; Mendoza Alvarez, Julio G.

    2011-03-01

    The photocatalytic activity of Ti O2 thin films in wastewater, under an UV irradiation, is studied. The films were prepared on corning glass substrates by the sputtering RF technique. We present evidence on the photocatalytic degradation, carried out by advanced oxidation processes (AOPs) in domestic wastewater pretreated with UASB (upflow anaerobic sludge blanket) reactors. Ti O2 films were illuminated with ultraviolet light during a time of 4 hours (λ ≅ 264 nm). We could see the effect of degraded operation in the absorbance measurement using UV-VIS spectrophotometry. The results show an increased rate of degradation of the wastewater by 30% compared to the values reflected biologically treated wastewater by anaerobic reactors.

  4. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  5. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  6. Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-An [Department of Mechanical Engineering, National Central University, Taiwan (China); Lin, Jing-Chie, E-mail: jclincom@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Taiwan (China); Institute of Material Science and Engineering, National Central University, Taiwan (China); Chang, Yu-Fong [Department of Mechanical Engineering, National Central University, Taiwan (China); Chyou, San-Der [Power Research Institute, Taiwan Power Company, Taiwan (China); Peng, Kun-Cheng [Department of Materials Science and Engineering, Mingchi University of Technology, Taiwan (China)

    2012-06-01

    Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E{sub g}) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 Multiplication-Sign 10{sup -2} {Omega} cm to 3.29 Multiplication-Sign 10{sup -3} {Omega} cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV-visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier

  7. RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

    Science.gov (United States)

    Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

    2017-08-01

    A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

  8. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  9. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  10. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    International Nuclear Information System (INIS)

    Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

    2012-01-01

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  11. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

    2012-01-31

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  12. Synthesis of self-assembled Ge nano crystals employing reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez H, A. [Universidad Autonoma del Estado de Hidalgo, Escuela Superior de Apan, Calle Ejido de Chimalpa Tlalayote s/n, Col. Chimalpa, Apan, Hidalgo (Mexico); Hernandez H, L. A. [IPN, Escuela Superior de Fisica y Matematicas, San Pedro Zacatenco, 07730 Ciudad de Mexico (Mexico); Monroy, B. M.; Santana R, G. [UNAM, Instituto de Investigaciones en Materiales, Apdo. Postal 70-360, 04510 Ciudad de Mexico (Mexico); Santoyo S, J.; Gallardo H, S. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14740, 07300 Ciudad de Mexico (Mexico); Marquez H, A. [Universidad de Guanajuato, Campus Irapuato-Salamanca, Departamento de Ingenieria Agricola, Km. 9 Carretera Irapuato-Silao, 36500 Irapuato, Guanajuato (Mexico); Mani G, P. G.; Melendez L, M. [Universidad Autonoma de Ciudad Juarez, Instituto de Ingenieria y Tecnologia, Departamento de Fisica y Matematicas, 32310 Ciudad Juarez, Chihuahua (Mexico)

    2016-11-01

    This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nano crystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO{sub 2}/Ge/SiO{sub 2} by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO{sub 2} layer buy the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nano crystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps. The surface topography of SiO{sub 2} reference samples was carried out by atomic force microscopy. The crystallographic properties of the samples were studied by grazing incidence X-ray diffraction at 1.5 degrees carried out in a Siemens D-5000 system employing the Cu Kα wavelength. (Author)

  13. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

    International Nuclear Information System (INIS)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

    2016-01-01

    Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

  14. Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tomoya, E-mail: tomoya@ecei.tohoku.ac.jp; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-04-30

    Vanadium (V) doped ZnO (VZO) thin films were deposited on flexible polymer and quartz substrates by RF magnetron sputtering, and influences of deposition parameters of V concentration, RF power and growth temperature on resistivity, transmittance and crystallinity were investigated. For the polymer substrates, both a high heat-resistant polycarbonate (PC) film and a functional-layer-coated PC film were adopted. The resistivity decreased gradually but the transmittance was worsened with increasing V concentration. Low RF power and high growth temperature improved both transparency and conductivity. By over-coating of the functional layers, c-axis orientation was deteriorated while low-resistivity and high-transmittance characteristics were achieved. Resistivity and average visible-transmittance (wavelength = 450–800 nm) of VZO films on untreated PC and over-coated PC substrates were 0.98 mΩ cm and 83.7%, and 1.2 mΩ cm and 80.3%, respectively, at V concentration of 2 at.%, RF power of 100 W and growth temperature of 175 °C. VZO films on the polymer substrates had slightly high resistivity but nearly the same optical transmittance, compared to those on quartz, under the identical deposition parameters. These results indicate that good electrical and optical properties can be achieved for the VZO films on PC substrate. - Highlights: • V-doped ZnO (VZO) was deposited on polymer substrate. • Effects of V concentration, RF power and growth temperature were investigated. • Resistivity decreased gradually with increasing V concentration. • Low RF power was suitable to obtain low resistivity and high transmittance. • High growth temperature improved both transparency and conductivity.

  15. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  16. Photoluminescence and charge-transport characteristics of nano-columnar titanium dioxide films prepared by rf-sputtering on alumina templates

    Science.gov (United States)

    Kheirandish, E.; Hosseini, T.; Yavarishad, N.; King, S.; Kouklin, N.

    2018-02-01

    The current study presents the synthesis and characterization of poly-crystalline TiO2 thin-film prepared by rf-sputtering on top of a highly regimented nanoporous Au-coated Al2O3 substrate. The film’s physical and electronic properties were characterized via SEM, EDS, x-ray diffraction and RAMAN spectroscopy as well as temperature dependent photoluminescence (PL) and I-V measurements. The films feature a 1D, columnar-like structure and exhibit a medium strength, spectrally-broad light emission in the UV-visible range. PL emission shows a weak T-dependence and is attributed to interband electronic transitions and defect-assisted radiative recombinations. The charge transport is confirmed to be polaronic in nature with both thermally-assisted hopping and quantum mechanical tunneling regulating a charge flow within the columns in the intermediate temperature regime of ˜200-320 K. These results open a door to utilizing nano-textured substrates/scaffolds to produce electronic-grade anatase TiO2 by sputtering for advanced opto-electronic device applications.

  17. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  18. Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications

    Science.gov (United States)

    Park, Seon-Yeong; Choe, Han-Cheol

    2018-02-01

    In this study, Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetrons sputtering for dental applications were studied using different experimental techniques. Mn coating films were formed on Ti-29Nb-xHf alloys by a radio frequency magnetron sputtering technique for 0, 1, 3, and 5 min at 45 W. The microstructure, composition, and phase structure of the coated alloys were examined by optical microscopy, field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The microstructure of Ti-29Nb alloy showed α" phase in the needle-like structure and Ti-29Nb-15Hf alloy showed β phase in the equiaxed structure. As the sputtering time increased, the circular particles of Mn coatings on the Ti-29Nb alloy increased at inside and outside surfaces. As the sputtering time increased, [Mn + Ca/P] ratio of the plasma electrolytic oxidized films in Ti- 29Nb-xHf alloys increased. The corrosion potential (Ecorr) of Mn coatings on the Ti-29Nb alloy showed higher than that of Mn coatings on the Ti-29Nb-15Hf alloy. The passive current density (Ipass) of the Mn coating on the Ti-29Nb alloy and Mn coatings on the Ti-29Nb-15Hf alloy was less noble than the non-Mn coated Ti-29Nb and Ti-29Nb-15Hf alloys surface.

  19. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  20. Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-01-01

    Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

  1. Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

    2017-02-15

    Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

  2. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  3. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  4. RF sputtering deposited a-IGZO films for LCD alignment layer application

    International Nuclear Information System (INIS)

    Wu, G.M.; Liu, C.Y.; Sahoo, A.K.

    2015-01-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  5. RF sputtering deposited a-IGZO films for LCD alignment layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Liu, C.Y.; Sahoo, A.K.

    2015-11-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  6. Electrochemical behaviour of titanium coated stainless steel by r.f. sputtering in synthetic sweat solutions for electrode applications

    International Nuclear Information System (INIS)

    Fonseca, C.; Vaz, F.; Barbosa, M.A.

    2004-01-01

    The r.f. sputtering technique was used to deposit titanium thin films on stainless steel substrates, aiming at the application of the coated samples as skin contact materials for 'dry' active electrodes. In this work the electrochemical behaviour of the coated samples was investigated in synthetic sweat solutions and their performance was compared with that of uncoated stainless steel and bulk titanium. The characterisation of the samples was carried out by electrochemical techniques and scanning electron microscopy. The coated samples displayed corrosion resistance values in synthetic sweat solutions much higher than stainless steel samples and of the same order of the values measured for bulk titanium in the same conditions

  7. Faraday screen sputtering on TPX

    International Nuclear Information System (INIS)

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author's emphasis will be on both impurity generation as a possible source of increased Z eff , and also on actual erosion-lifetime of the materials under worst case conditions

  8. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  9. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  10. Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

    International Nuclear Information System (INIS)

    Oh, Byeong-Yun; Park, Jae-Cheol; Lee, Young-Jun; Cha, Sang-Jun; Kim, Joo-Hyung; Kim, Kwang-Young; Kim, Tae-Won; Heo, Gi-Seok

    2011-01-01

    The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO 3 targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO 3 target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R s ) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: → The compositional dependence of co-sputtered WInZnO film properties is first investigated. → W cations work as oxygen binders in determining the electronic properties. → All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. → W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

  11. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  12. Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-01-01

    The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

  13. Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

    Science.gov (United States)

    Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

    2017-01-01

    This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

  14. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  15. Electrical properties of resistive switches based on Ba1-χSrχTiO3 thin films prepared by RF co-sputtering

    International Nuclear Information System (INIS)

    Marquez H, A.; Hernandez R, E.; Zapata T, M.; Guillen R, J.; Cruz, M. P.; Calzadilla A, O.; Melendez L, M.

    2010-01-01

    In this work, was proposed the use of Ba 1-χ Sr χ TiO 3 (0≤x≤1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba 1-χ Sr χ TiO 3 thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO 3 and SrTiO 3 targets. The chemical composition (x parameter) in the deposited Ba 1-χ Sr χ TiO 3 thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba 1-χ Sr χ TiO 3 /nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba 1-χ Sr χ TiO 3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba 1-χ Sr χ TiO 3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO 3 lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  16. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Miao, Dagang; Jiang, Shouxiang; Zhao, Hongmei; Shang, Songmin; Chen, Zhuoming

    2014-01-01

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films

  17. Optical, electrical, structural and microstructural characteristics of rf sputtered ITO films developed for art protection coatings

    International Nuclear Information System (INIS)

    Krasilnikova Sytchkova, A.; Grilli, M.L.; Piegari, A.; Boycheva, S.

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by rf sputtering in an Ar and Ar+O 2 gas mixture, both with and without additional substrate heating. The influence of both deposition conditions and post-annealing treatment on optical, electrical, structural and microstructural properties of the ITO films has been investigated. The optical constants have been calculated in the range 320-2500 nm using a combination of several theoretical models. A schematic diagram for the film properties change versus composition has been proposed in terms of a generalized parameter characterising the energy efficiency of the film formation. The deposition conditions and the optical and electrical properties of the films have been optimized with respect to the requirements for their application in art protection coatings. (orig.)

  18. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

    Science.gov (United States)

    2012-01-01

    In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

  19. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  20. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  1. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  2. Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126.com; Hu, Guangcai; Hu, Xie; Chen, Xipeng; Li, Pengzhi; Xiang, Weidong, E-mail: xiangweidong001@126.com

    2017-04-15

    The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

  3. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  4. Improved performance of dye-sensitized solar cell with a specially tailored TiO{sub 2} compact layer prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M.H., E-mail: hanapiah801@ppinang.uitm.edu.my [NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2014-07-05

    Highlights: • A novel gradient index antireflective TiO{sub 2} compact layer based DSSC was fabricated. • Higher right-shifted transmittance spectra favour the spectral response of N719 dye. • The arc-TiO{sub 2} film on ITO has decreased the charge interfacial resistance, R{sub 1}. • The arc-TiO{sub 2} film prevents electrons recombination at ITO and nc-TiO{sub 2} interfaces. • Almost 42% increment in the overall efficiency compared to the bare ITO cell. - Abstract: We demonstrate that a graded index TiO{sub 2} antireflective compact layer (arc-TiO{sub 2}) employed by RF sputtering can modulate the optical transmittance and reduce the electron recombination in dye-sensitized solar cell (DSSC). The spectral response of the DSSC is improved, due to higher and red-shifted transmittance spectra in a specific region that favours the sensitization effect of the dye. The effects of arc-TiO{sub 2} prepared at various RF sputtering powers to the performances of DSSC were investigated by means of the incident photo to current efficiency (IPCE), open-circuit voltage decay (OCVD) and electrochemical impedance spectroscopy (EIS). The slow decay of the photo-voltage attributed to the desirable merits of the arc-TiO{sub 2} compact layer has been evidenced by the OCVD measurement. Meanwhile, the improvement of adhesion between an arc-TiO{sub 2} film and porous-TiO{sub 2} has decreased the interfacial-charge resistance, R{sub 1} in the EIS measurement. This lower R{sub 1} then facilitates the charge-transfer process of the electron in the DSSC. At 100 W of RF power, these blended effects improved the overall conversion efficiency of the DSSC by an increase of 42% compared to the cell without the compact layer.

  5. Structural and superconducting properties of sputter-deposited niobium films for applications in RF accelerating cavities

    CERN Document Server

    Peck, M A

    2000-01-01

    The present work presents the results of a systematic study of superconducting and structural properties of niobium films sputter deposited onto the inner walls of radiofrequency copper resonators. The measured superconducting quantities include the surface resistance, the critical temperature, the penetration depth and the upper and lower critical fields. In addition to films grown with different discharge gases (Xe, Kr, Ar, Ne and Ar-Ne mixtures) and to films grown on substrates prepared under different conditions, the study also includes massive niobium cavities. The surface resistance is analysed in terms of its dependence on the temperature and on the rf field amplitude and, when possible, compared to theoretical predictions. In general, good agreement with BCS theory is observed. All experimental results are presented in the form of a simple, but adequate parameterisation. The residual resistance is observed to be essentially uncorrelated with the other variables, but strongly dependent on the macroscop...

  6. Proposal to negotiate a collaboration agreement related to the application of novel cavity fabrication techniques and Nb/Cu sputter coating technology in the field of superconducting RF for the Future Circular Collider (FCC) study

    CERN Document Server

    2015-01-01

    Proposal to negotiate a collaboration agreement related to the application of novel cavity fabrication techniques and Nb/Cu sputter coating technology in the field of superconducting RF for the Future Circular Collider (FCC) study

  7. AES depth profiles in Mo-coated 304L stainless steel achieved by RF-magnetron sputtering and influence of Mo on the corrosion in 3.5% NaCl solution

    Energy Technology Data Exchange (ETDEWEB)

    Saidi, D. [Département de métallurgie, Division de Technologie du Combustible, Centre de Recherche Nucléaire de Draria CRND, BP. 43 Draria, Alger (Algeria); Zaid, B., E-mail: zaidbachir@yahoo.com [Département de métallurgie, Division de Technologie du Combustible, Centre de Recherche Nucléaire de Draria CRND, BP. 43 Draria, Alger (Algeria); Souami, N. [Centre de Recherche Nucléaire d’Alger CRNA, 2 Bd. Frantz Fanon, Alger (Algeria); Saoula, N. [Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées CDTA, Cité du 20 août 1956, Baba Hassan, BP n 17, Alger (Algeria); Siad, M. [Centre de Recherche Nucléaire d’Alger CRNA, 2 Bd. Frantz Fanon, Alger (Algeria); Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Biberian, J.P. [CINaM, UMR 7525 CNRS, Aix Marseille Université, 13288 Marseille Cedex 9 (France)

    2015-10-05

    Highlights: • Mo coating of 304L stainless steel is achieved via RF-magnetron sputtering. • The AES depth profiles before and after annealing in air (at 973 K) are analyzed. • The corrosions in NaCl solution of bare and Mo-coated samples are compared. • Mo-coated steels exhibit better corrosion behaviors. • The positive action of Mo oxide via its semi-conducting properties is deduced. - Abstract: Molybdenum-coated 304L stainless steel samples, fabricated by RF-magnetron sputtering, are characterized by Auger Electron Spectroscopy (AES) before and after annealing in air at 973 K. The electrochemical parameters of bare and coated materials, in NaCl 3.5% water solution at 298 K, are derived from the potentiodynamic polarization curves. The corrosion current of Mo-coated samples (before and after annealing) is significantly lower than that of its bare counterpart. The information gained from the AES depth profiles leads us to infer that the positive action of molybdenum on the corrosion behavior may be attributed to the changes induced by the semi-conducting properties of Mo oxide in the passive film.

  8. Reactively sputtered TeO/sub x/ thin films for optical recording systems

    International Nuclear Information System (INIS)

    Di Giulio, M.; Micocci, G.; Rella, R.; Tepore, A.

    1988-01-01

    Tellurium suboxide (TeO/sub x/ ) thin films have been obtained by rf reactive sputtering deposition by using a Te target and an Ar--O 2 gas mixture. Different samples were prepared by changing both the rf power (80--200 W) and the oxygen concentration in the sputtering gas. The transmissivity and the reflectivity of these films change markedly by thermal treatment at critical temperatures in the range 120--150 0 C. This property makes these films suitable for optical disk recording with a low-output power laser diode

  9. Annealing dependent evolution of columnar nanostructures in RF magnetron sputtered PTFE films for hydrophobic applications

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Maidul Haque, S.; Divakar Rao, K.; Misal, J. S.; Prathap, C.; Das, S. C.; Patidar, Manju M.; Ganesan, V.; Sahoo, N. K.

    2018-01-01

    Present communication focuses on a relatively less explored direction of producing rough polytetrafluoroethylene (PTFE) surfaces for possible hydrophobic applications. The experiments were carried out to make rough PTFE films without losing much of the transmission, which is an important factor while designing futuristic solar cell protection covers. After annealing temperature optimization, as grown RF magnetron sputtered PTFE films (prepared at 160 W RF power) were subjected to vacuum annealing at 200 °C for different time durations ranging from 1 to 4 h. The films show morphological evolution exhibiting formation and growth of columnar nanostructures that are responsible for roughening of the films due to annealing induced molecular migration and rearrangement. In agreement with this, qualitative analysis of corresponding x-ray reflectivity data shows modification in film thickness, which may again be attributed to the growth of columns at the expense of the atoms of remaining film molecules. However, the observations reveal that the film annealed at 200 °C for 2 h gives a combination of patterned columnar structures and reasonable transmission of >85% (in 500-1000 nm wavelength range), both of which are deteriorated when the films are annealed either at high temperature beyond 200 °C or for long durations >3 h. In addition, attenuated total reflection-Fourier transform infrared spectroscopy results reveal that the molecular bonds remain intact upon annealing at any temperature within the studied range indicating the stable nature of the films.

  10. ZnO:Al thin films deposited by RF-magnetron sputtering with tunable and uniform properties.

    Science.gov (United States)

    Miorin, E; Montagner, F; Battiston, S; Fiameni, S; Fabrizio, M

    2011-03-01

    Nanostructured, high quality and large area Al-doped ZnO (ZnO:Al) thin films were obtained by radiofrequency (RF) magnetron sputtering. The sample rotation during deposition has resulted in excellent spatial distribution of thickness and electro-optical properties compared to that obtained under static conditions. ZnO:Al thin films are employed in a large number of devices, including thin film solar cells, where the uniformity of the properties is a key factor for a possible up-scaling of the research results to industrially relevant substrate sizes. A chemical post etching treatment was employed achieving tunable surface nanotextures to generate light scattering at the desired wavelength for improved cell efficiency. Since the film resistivity is only slightly increased by the etching, this post-deposition step allows separating the optimization of electro-optical properties from light scattering behavior. The thin films were characterized by FE-SEM, XRD, UV-VIS spectroscopy, four probe and van der Paw techniques.

  11. Surface roughness of sputtered ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y S [Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd. Shou-Feng, Hualien, Taiwan (China); Hsu, K C [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China); Huang, Y M [Institute of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Taiwan (China)

    2006-09-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D{sub ts}) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D{sub ts}, root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved.

  12. Surface roughness of sputtered ZnO films

    International Nuclear Information System (INIS)

    Lin, Y S; Hsu, K C; Huang, Y M

    2006-01-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D ts ) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D ts , root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved

  13. Reactively sputtered TeOx optical recording media

    International Nuclear Information System (INIS)

    Di Giulio, M.; Manno, D.; Micocci, G.; Rella, R.; Rizzo, A.; Tepore, A.

    1987-01-01

    Telluriom suboxide (TeO x ) thin films have been obtained by R.F. reactive sputtering deposition by using a Te target and an Ar-O 2 gas mixture. This technique of preparation has been shown to be a valid method because it is possible to easily obtain films with desired characteristics by an appropriate selection of the deposition conditions. Different samples were prepared by changing both the R.F. power (80-300 Watt) and the oxygen concentration in the sputtering gas. The films were analyzed in order to study their optical characteristics and the morphology before and after heat treatment. In particular, transmissivity and reflectivity have been found to change markedly by thermal treatment and critical temperatures in the range 120-150 grades centigrade. This property makes these films suitable for optical recording with a low output power laser diode

  14. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

    Science.gov (United States)

    Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

    2017-06-26

    Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.

  15. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  16. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  17. Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

    Science.gov (United States)

    Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

    2008-05-01

    Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

  18. Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering

    International Nuclear Information System (INIS)

    Park, Woo Young; Ahn, Kun Ho; Hwang, Cheol Seong

    2003-01-01

    This study investigated the structural and electrical properties of (Ba,Sr)TiO 3 (BST) thin film capacitors with thicknesses ranging from 18 to 215 nm, which were prepared by on- and off-axis rf magnetron sputtering technique on Pt/SiO 2 /Si substrates. The deposition rate and cation composition ratios of the films were controlled to be the same regardless of the sputtering geometry. All the films show elongations in the out-of-plane lattice spacing, suggesting the presence of compressive stress with a smaller value by on-axis sputtering than by the off-axis system. There was no thickness dependence of the strain in the polycrystalline BST films. The BST films deposited using the on-axis system showed a higher bulk dielectric constant with a higher interfacial capacitance and a lower leakage current level than the films produced by the off-axis system. The strain effect was proposed to explain the correlations between the structural and electrical properties

  19. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  20. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  1. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  2. Optimal series-parallel connection method of dye-sensitized solar cell for Pt thin film deposition using a radio frequency sputter system

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Young; Hong, Ji-Tae; Seo, Hyunwoong; Kim, Mijeong; Son, Min-Kyu; Lee, Kyoung-Jun [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Lee, Dong-Yoon [Advanced Materials and Application research Laboratory, Korea Electrotechnology Research Institute, 28-1, Seongju-dong, Changwon-city, Kyongnam, 641-120 (Korea, Republic of); Kim, Hee-Je [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)], E-mail: heeje@pusan.ac.kr

    2008-11-28

    The counter electrode widely used in DSC (Dye-sensitized solar cells) is constructed of a conducting glass substrate coated with a Pt film, in which the platinum acts as a catalyst. The characteristics of the platinum electrode depend strongly on the fabrication process and the electrode's surface condition. In this study, Pt counter electrodes were deposited by radio frequency (RF) sputtering with 6.7 x 10{sup -1} Pa Ar, RF power of 120 W and substrate temperature of 100 deg. C . The surface morphology of Pt electrodes was investigated using field emission scanning electron microscopy and atomic force microscopy. Comparison of samples prepared by RF sputtering and RF magnetron sputtering showed that the surface of the RF sputter deposited electrode had a larger surface area resulting in more effective catalytic characteristics. Finally, an open voltage of 4.8 V, a short circuit current of 569 mA and a photoelectric conversion efficiency of approximately 3.6% were achieved for cells composed of 30 DSC units of 6 cm x 4 cm DSC units with 6 cells in series and 5 cells in parallel.

  3. Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

    International Nuclear Information System (INIS)

    Galvez de la Puente, G.; Guerra Torres, J.A.; Erlenbach, O.; Steidl, M.; Weingaertner, R.; De Zela, F.; Winnacker, A.

    2010-01-01

    We produce amorphous silicon carbide thin films (a-SiC) by radio frequency (rf) magnetron sputtering from SiC bulk target. We present the emission pattern of the rf magnetron with SiC target as a function of process parameters, like target sample distance, rf power, sputtering rate and process gas pressure. The emission pattern is determined by means of thickness distribution of the deposited a-SiC films obtained from optical transmission measurements using a slightly improved method of Swanepoel concerning the determination of construction of the envelopes in the interference pattern of the transmission spectra. A calibration curve is presented which allows the conversion of integrated transmission to film thickness. Holding constant a set of process parameters and only varying the target sample distance the emission pattern of the rf magnetron with SiC target was determined, which allowed us to predict the deposition rate distribution for a wide range of process parameters and target geometry. In addition, we have found that the transmission spectra of the a-SiC films change with time and saturate after approximately 10 days. Within this process no change in thickness is involved, so that the determination of thickness using transmission data is justified.

  4. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  5. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  6. Comparison of Cu(In, Ga)Se{sub 2} thin films deposited on different preferred oriented Mo back contact by RF sputtering from a quaternary target

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Jing [Sichuan University, College of Materials Science and Engineering, Chengdu (China); Solar Energy Research Institute, Yunnan Normal University, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Kunming (China); Peng, Lianqin; Chen, Jinwei; Wang, Gang; Wang, Xueqin; Kang, Hong; Wang, Ruilin [Sichuan University, College of Materials Science and Engineering, Chengdu (China)

    2014-09-15

    The Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on bare glass and DC sputtered preferential oriented Mo-coated glass by RF sputtering from a single quaternary target. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD), Raman spectroscope, energy dispersive X-ray spectrometer (EDS) and atomic force microscope (AFM). Preferred orientation of the Mo back contact was tuned between (110) and (211) plane by controlling the thickness. All the deposited CIGS thin films show (112) preferred oriented chalcopyrite structures. The films prepared on Mo-coated glass show higher quality crystallinity, better stoichiometry composition and more smooth surface morphology. Especially, the film on (211) oriented Mo-coated glass with the best integrated performance is expected to be a candidate absorber for high-efficiency CIGS solar cell device. (orig.)

  7. Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

    2016-09-05

    N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  8. Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

    Directory of Open Access Journals (Sweden)

    Jang T.S.

    2016-01-01

    Full Text Available We report on the fabrication of Al-doped ZnO (AZO transparent-conductive oxide (TCO films on glass substrates by RF-sputtering, their physical properties, and the effect of thermal annealing on the AZO TCO films. The AZO films on glass substrates have a preferred orientation of the c-axis, irrespective of deposition conditions, which means that the AZO films have textured structures along the c-axis. The film thickness and surface roughness in the AZO films are proportional to plasma power and deposition time, while they are inverse-proportional to working gas ratio and working pressure. The AZO films have the optical transmittance over 80 % in the wavelength range of 400 – 1000 nm, irrespective of deposition conditions. The plasma power and the deposition time relatively give a large influence on the optical transmittance, compared to the working gas ratio and the working pressure. The AZO films deposited at room temperature have poor electrical properties, while the thermal annealing under Ar ambient significantly improves the electrical conductivity of the AZO films: an as-deposited sample has an electrical resistivity of 87 Wcm and an electron concentration of 1.3´1017 cm−3, while the annealed sample has an electrical resistivity of 3.7´10-2 Wcm and an electron concentration of 1.2´1020 cm−3.

  9. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    International Nuclear Information System (INIS)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L.

    2003-01-01

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

  10. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  11. Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

    2005-01-01

    Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

  12. Corrosion resistance of ZrNxOy thin films obtained by rf reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Ariza, E.; Rocha, L.A.; Vaz, F.; Cunha, L.; Ferreira, S.C.; Carvalho, P.; Rebouta, L.; Alves, E.; Goudeau, Ph.; Riviere, J.P.

    2004-01-01

    The main aim of this work is the investigation of the corrosion resistance of single layered zirconium oxynitride, ZrN x O y , thin films in artificial sweat solution at ambient temperature. The films were produced by rf reactive magnetron sputtering, using a pure Zr target at a constant temperature of 300 deg. C. Two different sets of samples were produced. In the first set of films, the substrate bias voltage was the main variable, whereas in the second set, the flow rate of reactive gases (oxygen/nitrogen ratio) was varied. The control of the amount of oxygen allowed the film properties to be tailored from those of covalent zirconium nitride to those of the correspondent ionic oxide. The corrosion behaviour was evaluated by potentiodynamic polarization and Electrochemical Impedance Spectroscopy (EIS) tests. The analysis of EIS data provided detailed information of the corrosion processes occurring at the surface of the system throughout the immersion time. The modifications of the coating microstructure and/or chemical composition induced by the variation of the deposition parameters were also evaluated and correlated with the corrosion mechanisms occurring in each system

  13. Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Katiyar, R S [Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343 (Puerto Rico); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2007-10-07

    We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm{sup -1}. The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A{sub 1} (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries.

  14. Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Sreenivas, K; Katiyar, R S; Gupta, Vinay

    2007-01-01

    We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm -1 . The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A 1 (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries

  15. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  16. Surface morphology, structural and electrical properties of RF ...

    Indian Academy of Sciences (India)

    5

    electrical properties of RF sputtered ITO thin films deposited onto Si(100). .... scanning electron microscopy (SEM) surface images are shown along with the cross- ..... annealing effect”, J. of Alloys and Compounds 509, (2011) 6072-6076.

  17. Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

    Energy Technology Data Exchange (ETDEWEB)

    Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

    2015-07-15

    A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

  18. Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

    Science.gov (United States)

    Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

    2018-05-01

    Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

  19. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  20. Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

    CERN Document Server

    Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

    2002-01-01

    The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

  1. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  2. First prototype Copper-Niobium RF Superconducting Cavity

    CERN Multimedia

    1983-01-01

    This is the first RF superconducting cavity made of copper with a very thin layer of pure niobium deposited on the inner wall by sputtering. This new developpment lead to a considerable increase of performance and stability of superconducting cavities and to non-negligible economy. The work was carried out in the ISR workshop. This technique was adopted for the LEP II accelerating cavities. At the centre is Cristoforo Benvenuti, inventor of this important technology, with his assistants, Nadia Circelli and Max Hauer, carrying the sputtering electrode. See also 8209255, 8312339.

  3. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  4. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  5. Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

    International Nuclear Information System (INIS)

    Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

    2005-01-01

    In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

  6. Influence of rf-magnetron Sputtered ITO and Al:ZnO on Photovoltaic Behaviour Related to CuInSe2-Based Photovoltaic Solar Cells

    International Nuclear Information System (INIS)

    Martinez, M.A.; Guillen, C; Dona, J. M.; Herrero, J; Gutierrez, M. T.

    2000-01-01

    This paper describes several investigations, made in the CIEMAT, on the capability of depositing transparent conducting oxides at room temperature by rf-magnetron sputtering, and their application in CuInSe 2 -based photovoltaic solar cells. ITO and Al:ZnO thin films having simultaneously high transmittance in the visible range and low resistivity, 10 3 -10 - 4 Ωcm, can be obtained only if oxygen mass-flow rate is constrained to a very narrow range (0.5 - 1 sccm). Cell efficiency enhance when transparent conducting oxides are made without intentional heating and, after, the total devices are annealed in air at 200 degree centigree. (Author) 40 refs

  7. On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cattaruzza, E., E-mail: cattaruz@unive.it [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Battaglin, G.; Riello, P. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Cristofori, D. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice and Centre for Electron Microscopy “Giovanni Stevanato”, Via Torino 155/B, 30172 Mestre-VE (Italy); Tamisari, M. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1, 44121 Ferrara (Italy)

    2014-11-30

    Highlights: • RuN thin films in the zinc-blende structure have been synthesized by rf-magnetron sputtering. • Contribute is given to the understanding of phase-formation mechanisms in systems that under ambient conditions present positive enthalpies of formation. • Contribute is given to the understanding of phenomena occurring during reactive sputtering processes. • Nanopillar structure: suitable for application requiring a high effective area, like sensing, catalysis, and electrode material for energy-storage devices. - Abstract: 4d- and 5d-transition metal nitrides are of interest both because of their importance for the understanding of mechanisms of phase formation in systems that under ambient conditions present positive enthalpies of formation and because of their appealing structural and electronic properties. In this study, we report the synthesis of thin films of ruthenium mononitride (RuN) in the zinc-blende structure by radio-frequency-magnetron sputtering. Films present a characteristic structure of packed columns ending with tetrahedral tips. The effect of changing the synthesis parameters was investigated in detail. It was found that RuN can be formed if the nitrogen partial pressure exceeds a minimum value and that the addition of argon has the major effect of increasing the deposition rate because of its higher sputter ability. Temperature plays an important role: if it is too high, decomposition/desorption effects overcome those leading to the formation of the compound. Phenomena resulting in the formation of RuN occur at the surface of the growing films and are related to the interactions of ruthenium with energetic nitrogen ions, or atoms, which can penetrate the first atomic layers by low energy implantation. Because of its properties and structure, this material is a promising candidate for applications like sensing, catalysis, and electrode material for energy-storage devices.

  8. Sputter crater formation in the case of microsecond pulsed glow discharge in a Grimm-type source. Comparison of direct current and radio frequency modes

    Science.gov (United States)

    Efimova, Varvara; Hoffmann, Volker; Eckert, Jürgen

    2012-10-01

    Depth profiling with pulsed glow discharge is a promising technique. The application of pulsed voltage for sputtering reduces the sputtering rate and thermal stress and hereby improves the analysis of thin layered and thermally fragile samples. However pulsed glow discharge is not well studied and this limits its practical use. The current work deals with the questions which usually arise when the pulsed mode is applied: Which duty cycle, frequency and pulse length must be chosen to get the optimal sputtering rate and crater shape? Are the well-known sputtering effects of the continuous mode valid also for the pulsed regime? Is there any difference between dc and rf pulsing in terms of sputtering? It is found that the pulse length is a crucial parameter for the crater shape and thermal effects. Sputtering with pulsed dc and rf modes is found to be similar. The observed sputtering effects at various pulsing parameters helped to interpret and optimize the depth resolution of GD OES depth profiles.

  9. Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.

  10. Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    International Nuclear Information System (INIS)

    Giannetta, H.M.R.; Calaza, C.; Lamas, D.G.; Fonseca, L.; Fraigi, L.

    2015-01-01

    The present study investigates the main electrical transport mechanism in V 2 O 5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V 2 O 5 target and then oxidized at high temperature under air atmosphere to obtain the desired V 2 O 5 phase. The dependence of the electrical conductivity of the V 2 O 5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W H = 0.1682 eV, with a structural disorder energy W D = 0.2241 eV and an optical phonon frequency ν 0 = 0.468 × 10 13 s −1 . These results are in agreement with data reported in literature for single crystal V 2 O 5 . However, the carrier mobility μ = 1.5019 × 10 −5 cm 2 /Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V 2 O 5 thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V 2 O 5 films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping

  11. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  12. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

    2013-05-01

    Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

  14. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  15. Development of thin film cathodes for lithium-ion batteries in the material system Li–Mn–O by r.f. magnetron sputtering

    International Nuclear Information System (INIS)

    Fischer, J.; Adelhelm, C.; Bergfeldt, T.; Chang, K.; Ziebert, C.; Leiste, H.; Stüber, M.; Ulrich, S.; Music, D.; Hallstedt, B.; Seifert, H.J.

    2013-01-01

    Today most commercially available lithium ion batteries are still based on the toxic and expensive LiCoO 2 as a standard cathode material. However, lithium manganese based cathode materials are cheaper and environmentally friendlier. In this work cubic-LiMn 2 O 4 spinel, monoclinic-Li 2 MnO 3 and orthorhombic-LiMnO 2 thin films have been synthesized by non-reactive r.f. magnetron sputtering from two ceramic targets (LiMn 2 O 4 , LiMnO 2 ) in a pure argon discharge. The deposition parameters, namely target power and working gas pressure, were optimized in a combination with a post deposition heat treatment with respect to microstructure and electrochemical behavior. The chemical composition was determined using inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The films' crystal structure, phase evolution and morphology were investigated by X-ray diffraction, micro Raman spectroscopy and scanning electron microscopy. Due to the fact that these thin films consist of the pure active material without any impurities, such as binders or conductive additives like carbon black, they are particularly well suited for measurements of the intrinsic physical properties, which is essential for fundamental understanding. The electrochemical behavior of the cubic and the orthorhombic films was investigated by galvanostatic cycling in half cells against metallic lithium. The cubic spinel films exhibit a maximum specific capacity of ∼ 82 mAh/g, while a specific capacity of nearly 150 mAh/g can be reached for the orthorhombic counterparts. These films are promising candidates for future all solid state battery applications. - Highlights: ► Synthesis of 3 Li–Mn–O structures by one up-scalable thin film deposition method ► Formation of o-LiMnO 2 by r.f. magnetron sputtering in combination with post-annealing ► Discharge capacity with o-LiMnO 2 cathodes twice as high as for c-LiMn 2 O 4 ► Thin film deposition of m-Li 2 MnO 3 and

  16. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Science.gov (United States)

    Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

    2018-06-01

    This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

  17. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Science.gov (United States)

    Al-Mansoori, Muntaser; Al-Shaibani, Sahar; Al-Jaeedi, Ahlam; Lee, Jisung; Choi, Daniel; Hasoon, Falah S.

    2017-12-01

    Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  18. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Directory of Open Access Journals (Sweden)

    Muntaser Al-Mansoori

    2017-12-01

    Full Text Available Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2. The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF-sputtering system on the growth of intrinsic SnO2 (i-SnO2 layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  19. Measurement of the extinction of sputtered TiO/sub 2/ films

    Energy Technology Data Exchange (ETDEWEB)

    Welsch, E; Lieder, G; Walther, H G; Hacker, E

    1982-05-28

    In this paper a method for separate measurement of the extinction of optical thin films is presented. The method combines a laser calorimetric technique and a light-scattering goniophotometer. As an example, the spectral extinction properties of r.f. reactively sputtered TiO/sub 2/ films were measured. Under certain conditions absorption indices of 10/sup -5/ or less can be achieved. Thus light scattering, rather than absorption, is the dominant optical loss mechanism in sputtered TiO/sub 2/ films.

  20. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  1. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  2. Morphology and life-time investigations of dry-lubricating MoS2 films deposited by RF-sputtering

    International Nuclear Information System (INIS)

    Menoud, C.; Kocher, H.; Hinterman, H.E.

    1985-01-01

    Morphology and life-time investigations in vacuum, dry and humid air, of thin, dry-lubricating MoS 2 -films, deposited by rf-sputtering, are reported, using scanning electron microscopical analysis (SEM) and pin on disc friction measurements. Beyond a certain relative humidity the life-time decreases rapidly by about two orders of magnitude, and the coefficient of friction increases from 0.02 to 0.04 in vacuum to 0.20 to 0.30 in humid air. Considering these changes, the useful life-time of a coating was defined as the number of revolutions at a given radius till the coefficient of friction reaches a value of 0.4. Life-time studies were also conducted with Rhodium interlayers and other substrate and pin materials. With the above life-time criterion and the selected pin-on-disc test conditions, the life-time does not show any significant change within an MoS 2 thickness range of 0.2 to 1.5 μm. Finally the life-time distribution of 160 depositions as well as some preliminary results on torque measurements with MoS 2 coated precision roller bearings are presented. (author)

  3. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  4. Effect of oxygen intercalation on properties of sputtered CuYO 2 for ...

    Indian Academy of Sciences (India)

    Keywords. Transparent conducting oxide; RF sputtering; -type TCO. ... The positive sign of Seebeck coefficient (+274 VK-1) confirms the -type conductivity of the films. The optical bandgap of CuYO2 ... Bulletin of Materials Science | News.

  5. Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Piegari, Angela

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by r.f. plasma sputtering technique in Ar and Ar + O 2 gas mixture. The influence of the deposition conditions, film thickness, and substrate heating, as well as the post-annealing treatment on the optical and electrical properties of the ITO films has been investigated. The present study has extended the optical behaviour characterization of the ITO films in a wide UV-VIS-IR spectral region in addition to the comprehensive optical studies of this material at shorter wavelengths. The optical constants: refractive index (n), extinction (k) and absorption (α) coefficient, and the optical band gap (E go ) have been calculated for the ITO films in the spectral range between 350 and 2500 nm. A combination of several well-known theoretical models has been applied to describe precisely the complex optical behaviour of ITO films in separate spectral parts. In this approach, a good overlapping between the experimental and the simulated spectra in the whole investigated spectral region has been achieved. The deposition conditions and the optical and electrical properties of the ITO films have been optimized with respect to the requirements for their applications in art protection coatings

  6. Influence of sputtering power on the optical properties of ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  7. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  8. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  9. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  10. Electrical properties of resistive switches based on Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films prepared by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A.; Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Calzada Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guillen R, J. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Tampico, Puerto Industrial, Altamira 89600, Tamaulipas (Mexico); Cruz, M. P. [UNAM, Centro de Nanociencias y Nanotecnologia, Km. 107 Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana, Cuba (Cuba); Melendez L, M., E-mail: amarquez@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, A. P. 14-740, 07000 Mexico D. F. (Mexico)

    2010-07-01

    In this work, was proposed the use of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}(0{<=}x{<=}1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO{sub 3} and SrTiO{sub 3} targets. The chemical composition (x parameter) in the deposited Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO{sub 3} lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  11. Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

    2010-09-15

    Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

  12. The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

    2017-05-31

    Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

  13. Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kwangseok; Han, Seungwoo; Park, Kyoungwan; Sok, Junghyun

    2006-01-01

    In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 .deg. C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O 2 or N 2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O 2 atmosphere turned out to be much larger than that of the post-annealed films in a N 2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O 2 content and the top electrode improve the electroresistance.

  14. Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

    International Nuclear Information System (INIS)

    Islam, Mohammad; Inal, Osman T.

    2008-01-01

    Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

  15. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  16. Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Elanchezhiyan, J.; Bhuvana, K.P.; Gopalakrishnan, N.; Balasubramanian, T.

    2008-01-01

    In this paper, we have presented the surface effect of the substrates on Mn doped ZnO (Zn 1-x Mn x O) thin films grown on Si(1 0 0) and sapphire [i.e. Al 2 O 3 (0 0 0 1)] by RF magnetron sputtering. These grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and vibrating sample magnetometer (VSM) to know its structural, optical and magnetic properties. All these properties have been found to be strongly influenced by the substrate surface on which the films have been deposited. The XRD results show that the Mn doped ZnO films deposited on Si(1 0 0) exhibit a polycrystalline nature whereas the films on sapphire substrate have only (0 0 2) preferential orientations indicating that the films are single crystalline. The studies of room temperature PL spectra reveal that the Zn 1-x Mn x O/Si(1 0 0) system is under severe compressive strain while the strain is almost relaxed in Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system. It has been observed from VSM studies that Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system shows ferromagnetic nature while the paramagnetic behaviour observed in Zn 1-x Mn x O/Si(1 0 0) system

  17. Fabrication and characterization of implantable and flexible nerve cuff electrodes with Pt, Ir and IrOx films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Lee, Soo Hyun; Jung, Jung Hwan; Chae, Youn Mee; Kang, Ji Yoon; Suh, Jun-Kyo Francis

    2010-01-01

    This paper presents the fabrication and characterization of implantable and flexible nerve cuff electrodes for neural interfaces using the conventional BioMEMS technique. In order to fabricate a flexible nerve electrode, polyimide (PI) was chosen as the substrate material. Then, nerve electrodes were thermally re-formed in a cuff shape so as to increase the area in which the charges were transferred to the nerve. Platinum (Pt), iridium (Ir) and iridium oxide (IrO x ) films, which were to serve as conducting materials for the nerve electrodes, were deposited at different working pressures by RF magnetron sputtering. The electrochemical properties of the deposited films were characterized by electrochemical impedance spectroscopy (EIS). The charge delivery capacities of the films were recorded and calculated by cyclic voltammetry (CV). The deposited films of Pt, Ir and IrO x have strong differences in electrochemical properties, which depend on the working pressure of sputter. Each film deposited at 30 mTorr of working pressure shows the highest value of charge delivery capacity (CDC). For the IrO x films, the electrochemical properties were strongly affected by the working pressure as well as the Ar:O 2 gas ratio. The IrO x film deposited with an Ar:O 2 gas ratio of 8:1 showed the highest CDC of 59.5 mC cm −2 , which was about five times higher than that of films deposited with a 1:1 gas ratio.

  18. Development of thin film cathodes for lithium-ion batteries in the material system Li–Mn–O by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, J., E-mail: julian.fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Adelhelm, C.; Bergfeldt, T. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Chang, K. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 46 52074 Aachen (Germany); Ziebert, C.; Leiste, H.; Stüber, M.; Ulrich, S. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D.; Hallstedt, B. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 46 52074 Aachen (Germany); Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2013-01-01

    Today most commercially available lithium ion batteries are still based on the toxic and expensive LiCoO{sub 2} as a standard cathode material. However, lithium manganese based cathode materials are cheaper and environmentally friendlier. In this work cubic-LiMn{sub 2}O{sub 4} spinel, monoclinic-Li{sub 2}MnO{sub 3} and orthorhombic-LiMnO{sub 2} thin films have been synthesized by non-reactive r.f. magnetron sputtering from two ceramic targets (LiMn{sub 2}O{sub 4}, LiMnO{sub 2}) in a pure argon discharge. The deposition parameters, namely target power and working gas pressure, were optimized in a combination with a post deposition heat treatment with respect to microstructure and electrochemical behavior. The chemical composition was determined using inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The films' crystal structure, phase evolution and morphology were investigated by X-ray diffraction, micro Raman spectroscopy and scanning electron microscopy. Due to the fact that these thin films consist of the pure active material without any impurities, such as binders or conductive additives like carbon black, they are particularly well suited for measurements of the intrinsic physical properties, which is essential for fundamental understanding. The electrochemical behavior of the cubic and the orthorhombic films was investigated by galvanostatic cycling in half cells against metallic lithium. The cubic spinel films exhibit a maximum specific capacity of ∼ 82 mAh/g, while a specific capacity of nearly 150 mAh/g can be reached for the orthorhombic counterparts. These films are promising candidates for future all solid state battery applications. - Highlights: ► Synthesis of 3 Li–Mn–O structures by one up-scalable thin film deposition method ► Formation of o-LiMnO{sub 2} by r.f. magnetron sputtering in combination with post-annealing ► Discharge capacity with o-LiMnO{sub 2} cathodes twice as high as for c

  19. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  20. SHI induced effects on the electrical and optical properties of HfO{sub 2} thin films deposited by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P., E-mail: appsp@uohyd.ernet.in

    2016-07-15

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO{sub 2} as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO{sub 2} is the only alternative to reduce the leakage current. HfO{sub 2} is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO{sub 2} thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO{sub 2}/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  1. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

    2017-04-01

    Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

  2. Optimal conditions for the deposition of novel anticorrosive coatings by RF magnetron sputtering for aluminum alloy AA6082

    International Nuclear Information System (INIS)

    Brachetti-Sibaja, S.B.; Domínguez-Crespo, M.A.; Rodil, S.E.; Torres-Huerta, A.M.

    2014-01-01

    Highlights: • Non-conventional technique for improving the corrosion resistance of aluminum alloys. • Effect of the deposition parameters: power, substrate temperature and deposition time. • Changes in the crystallinity of the coatings are observed with the temperature. • The structure of these coatings is found to be dependent on the nature of the substrate. • La coatings can provide a better physical barrier to inhibit the corrosion attack. - Abstract: Cerium and lanthanum coatings were deposited on glass, silicon (1 0 0), and aluminum alloy by RF magnetron sputtering in which several experimental conditions such as power, substrate temperature, and deposition time were varied, using pure CeO 2 and La 2 O 3 targets. The effect of deposition parameters on the bonding structure, surface morphology and properties against corrosion of rare earth (RE) coatings formed on metallic substrate was reported. The microstructure and chemistry of the thin film were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS); whereas their use as corrosion resistant coatings was studied in aqueous NaCl solution (3.0 wt%) by using polarization curves. Variations in these properties were observed by increasing the substrate temperature which modifies the crystallinity of the rare earth coatings. XRD and XPS findings indicate that the cerium coatings are composed by CeO 2 and a significant quantity of Ce 2 O 3 due to oxygen deficiency in the sputtering chamber, whereas La 2 O 3 /La(OH) 3 and some La intermetallic compounds are detected in the lanthanum films. Variations in the E corr and I corr were found as a function of the thickness, texture, and morphology of the as-prepared coatings

  3. Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

    Directory of Open Access Journals (Sweden)

    Azrul Azlan Hamzah

    2008-11-01

    Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

  4. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  5. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  6. Tribological characterization of TiN coatings prepared by magnetron sputtering

    Science.gov (United States)

    Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

    2018-05-01

    Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

  7. Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

    Institute of Scientific and Technical Information of China (English)

    Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

    2011-01-01

    Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

  8. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  9. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  10. Structural evolution and growth mechanisms of RF-magnetron sputter-deposited hydroxyapatite thin films on the basis of unified principles

    Science.gov (United States)

    Ivanova, Anna A.; Surmeneva, Maria A.; Surmenev, Roman A.; Depla, Diederik

    2017-12-01

    The structural features of RF-magnetron sputter-deposited hydroxyapatite (HA) coatings are investigated in order to reveal the effect of the working gas composition and the sample position of the substrate relative to the target erosion zone. The film properties were observed to change as a result of bombardment with energetic ions. XRD analysis of the coated substrates indicates that with the increase of the ion-to-atom ratio, the fiber texture changes from a mixed (11 2 bar 2) + (0002) over (0002) orientation, finally reaching a (30 3 bar 0) out-of-plane orientation at high ion-to-atom ratios. TEM reveals that the microstructure of the HA coating consists of columnar grains and differs with the coating texture. The contribution of Ji/Ja to the development of microstructure and texture of the HA coating is schematically represented and discussed. The obtained results may contribute substantially to the progress of research into the development of HA coatings with tailored properties, and these coatings may be applied on the surfaces of metal implants used in bone surgery.

  11. SnO{sub 2}:F thin films deposited by RF magnetron sputtering: effect of the SnF{sub 2} amount in the target on the physical properties

    Energy Technology Data Exchange (ETDEWEB)

    De Moure F, F. [universidad Autonoma de Queretaro, Facultad de Quimica Materiales, Queretaro 76010, Queretaro (Mexico); Guillen C, A.; Nieto Z, K. E.; Quinones G, J. G.; Hernandez H, A.; Melendez L, M.; Olvera, M. de la L., E-mail: fcomoure@hotmail.com [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07360 Mexico D. F. (Mexico)

    2013-08-01

    SnO{sub 2}:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF{sub 2} as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500 C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO{sub 2} and Sn O. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO{sub 2} thin films grown with small SnF{sub 2} content in the target can be considered as candidates for transparent electrodes. (Author)

  12. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

    Czech Academy of Sciences Publication Activity Database

    Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

    2004-01-01

    Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

  13. Electrical transport properties of V{sub 2}O{sub 5} thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Giannetta, H.M.R., E-mail: hgiann@inti.gov.ar [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina); Calaza, C. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Lamas, D.G. [Universidad Nacional del Comahue CONICET-CITEFA — Laboratorio de Caracterización de Materiales, Facultad de Ingeniería, Neuquen (Argentina); Fonseca, L. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Fraigi, L. [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina)

    2015-08-31

    The present study investigates the main electrical transport mechanism in V{sub 2}O{sub 5} thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V{sub 2}O{sub 5} target and then oxidized at high temperature under air atmosphere to obtain the desired V{sub 2}O{sub 5} phase. The dependence of the electrical conductivity of the V{sub 2}O{sub 5} thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W{sub H} = 0.1682 eV, with a structural disorder energy W{sub D} = 0.2241 eV and an optical phonon frequency ν{sub 0} = 0.468 × 10{sup 13}s{sup −1}. These results are in agreement with data reported in literature for single crystal V{sub 2}O{sub 5}. However, the carrier mobility μ = 1.5019 × 10{sup −5} cm{sup 2}/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V{sub 2}O{sub 5} thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V{sub 2}O{sub 5} films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping.

  14. Preparation of YBaCuO superconducting tape by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Fukutomi, Masao; Akutsu, Nakao; Tanaka, Yoshiaki; Asano, Toshihisa; Maeda, Hiroshi (National Research Inst. for Metals, Tsukuba (Japan); Mitsui Mining and Smelting Co., Ltd., Tokyo (Japan))

    1989-04-01

    The effect of buffer layers, conditions of film preparation, and the relation between superconducting characteristics and bombardment of high energy ions on films were discussed in an attempt to fabricate YBaCuO films on metallic substrates by sputtering. Hastelloy-X tapes and Chromel (Ni-10Cr) fine wires were used as metallic substrates, and MgO films as buffer layers, which were provided by sputtering a MgO sintered target and annealing. As a result, superconducting films were favorably obtained on the Hastelloy tapes with the MgO buffer layers, however, counter diffusion at the interface of the film and layer was unavoidable in annealing. C axis-highly oriented film with high zero resistance Tc was obtained in such an arrangement of the target and substrate as to lower the effect of 0{sup {minus}} ion resputtering, resulting in the most favorable Tc=80.4K. YBaCuO superconducting films could be also deposited on a bundle of Chromel fine wires preliminarily. 11 refs., 7 figs.

  15. Fabrication and Physical Properties of Titanium Nitride/Hydroxyapatite Composites on Polyether Ether Ketone by RF Magnetron Sputtering Technique

    Science.gov (United States)

    Nupangtha, W.; Boonyawan, D.

    2017-09-01

    Titanium nitride (TiN) coatings have been used very successfully in a variety of applications because of their excellent properties, such as the high hardness meaning good wear resistance and also used for covering medical implants. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. This paper aims to explain how to optimize deposition conditions for films synthesis on PEEK by varying sputtering parameters such as nitrogen flow rate and direction, deposition time, d-s (target-to-substrate distance) and 13.56 MHz RF power. The plasma conditions used to deposit films were monitored by the optical emission spectroscopy (OES). Titanium nitride/Hydroxyapatite composite films were performed by gas mixture with nitrogen and argon ratio of 1:3 and target-to-substrate distance at 8 cm. The gold colour, as-deposited film was found on PEEK with high hardness and higher surface energy than uncoated PEEK. X-ray diffraction characterization study was carried to study the crystal structural properties of these composites.

  16. Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

    Science.gov (United States)

    Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

    2018-04-01

    ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

  17. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-04-15

    Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    International Nuclear Information System (INIS)

    Park, Yong Seob; Kim, Han-Ki

    2011-01-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  19. Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

    Science.gov (United States)

    Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

    2018-03-01

    NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

  20. RF magnetron sputtering and evaporation of polyisobutylene and low density polyethylene

    Czech Academy of Sciences Publication Activity Database

    Kousal, J.; Hanuš, J.; Choukourov, A.; Hlídek, P.; Biederman, H.; Slavinská, D.; Zemek, Josef

    2005-01-01

    Roč. 200, 1-4 (2005), s. 472-475 ISSN 0257-8972 R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) ME 553 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetron * radio frequency * sputtering * polyethylene * polyisobutylene Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.646, year: 2005

  1. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

    International Nuclear Information System (INIS)

    Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

    1980-01-01

    The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

  2. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    International Nuclear Information System (INIS)

    Pinzón, M.J.; Alfonso, J.E.; Olaya, J.J.; Cubillos, G.I.; Romero, E.

    2014-01-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N 2 /O 2 , with a flow ratio ΦN 2 /ΦO 2 of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO 2 ) and body-centered cubic (Zr 2 ON 2 ). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films

  3. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pinzón, M.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cubillos, G.I.; Romero, E. [Grupo de Materiales y Procesos Químicos, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2014-12-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N{sub 2}/O{sub 2}, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO{sub 2}) and body-centered cubic (Zr{sub 2}ON{sub 2}). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films.

  4. Influence of ferroelectric layer on artificial multiferroic LSMO/BTO bilayers deposited by Dc and RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ordonez, J. E.; Gomez, M. E.; Lopera, W. [Universidad del Valle, Department of Physics, A. A. 25360 Cali (Colombia)

    2016-11-01

    La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO)/BaTiO{sub 3} (BTO) bilayers were deposited on (001) SrTiO{sub 3} substrates via Dc and RF sputtering at pure oxygen atmosphere at a substrate temperature of 830 degrees Celsius. We studied the structural, electrical and magnetic properties on LSMO/BTO bilayers, when LSMO thickness is fixed at nm and BTO thickness is varied from 20 to 100 nm. Reciprocal Space Maps in LSMO show a strained growth for all samples, while BTO layers are always relaxed. Magnetization and electrical measurements indicate the influence of the ferroelectric layer, due to saturation magnetization increases from 500 to 590 emu/cm{sup 3} and coercive field decreases from 178 to 82 Oe with BTO thickness. Mean Field mechanism is identified on all samples with critical exponent β between 0.42 and 0.54. Resistivity measurements show electron-electron and magnon-magnon scattering conduction mechanisms. The influence on magnetic and electrical properties of bilayers with BTO thickness is attributed to crystallographic strains at the interface and the corresponding relaxation with increasing BTO layer thickness. The thickness of the individual layers were obtained by X-ray reflectivity measurements in the bilayers, not shown. X-ray diffraction and Reciprocal Space Maps measurements show highly textured layers with preferential growth in the c-axis direction. (Author)

  5. Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

    Science.gov (United States)

    Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

    2018-06-01

    Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

  6. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    International Nuclear Information System (INIS)

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  7. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  8. Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

    Science.gov (United States)

    Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

    2017-11-01

    Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

  9. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Science.gov (United States)

    Surmeneva, Maria A.; Surmenev, Roman A.; Nikonova, Yulia A.; Selezneva, Irina I.; Ivanova, Anna A.; Putlyaev, Valery I.; Prymak, Oleg; Epple, Matthias

    2014-10-01

    A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  10. Shape memory characteristics of sputter-deposited Ti-Ni thin films

    International Nuclear Information System (INIS)

    Miyazaki, Shuichi; Ishida, Akira.

    1994-01-01

    Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering apparatus. The as-sputtered films were heat-treated in order to crystallize and memorize. After the heat treatment, the shape memory characteristics have been investigated using DSC and thermomechanical tests. Upon cooling the thin films, the solution-treated films showed a single peak in the DSC curve indicating a single stage transformation occurring from B2 to the martensitic phase, while the age-treated films showed double peaks indicating a two-stage transformation, i.e., from B2 to the R-phase, then to the martensitic phase. A perfect shape memory effect was achieved in these sputter-deposited Ti-Ni thin films in association both with the R-phase and martensitic transformations. Transformation temperatures increased linearly with increasing applied stress. The transformation strain also increased with increasing stress. The shape memory characteristics were strongly affected by heat-treatment conditions. (author)

  11. Some Characteristics of r.f. Sputtered CuInS2 Thin Films

    International Nuclear Information System (INIS)

    Samaan, A.N.Y.; Al-Saffar, I.S.; Wasim, S.M.; Hill, A.E.; Armour, D.G.; Tomlinson, R.D.

    1983-01-01

    Electrical data from sputtered and annealed p-type CuInS 2 thin films have been obtained over a range of temperatures. An analysis of hole mobility vs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode vibrations

  12. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil

    2016-01-01

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10"-1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10"-3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10"-4 Ω"-1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  14. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

    2016-06-15

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10{sup -}1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10{sup -}3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10{sup -}4 Ω{sup -}1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  15. Study on the preheating duration of Cu{sub 2}SnS{sub 3} thin films using RF magnetron sputtering technique for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuchen; He, Jun; Li, Xinran; Chen, Ye; Sun, Lin, E-mail: lsun@ee.ecnu.edu.cn; Yang, Pingxiong; Chu, Junhao

    2016-04-25

    Cu{sub 2}SnS{sub 3} (CTS) thin films are prepared by sulfurization the stacked metallic precursors deposited by raido-frequency magnetron sputtering method on molybdenum-coated soda lime glass substrates. The details of sulfurization process and the effect of preheating duration on the properties of CTS thin films have been investigated. It is found that the content of element tin strongly depend on the preheating duration. X-ray diffraction patterns identify that the CTS thin films exhibit the monoclinic structure. Raman scattering spectra make a further confirmation for the crystal structure. Fourier transform infrared reflectance spectroscopy (FTIR) is first used to study the properties of CTS thin films. The assigned active modes in Raman scattering spectra is consistent with the analysis in FTIR. Morphology analysis reveals long preheating duration would make the quality of films deteriorate. The thin film solar cell (TFSC) fabricated using the CTS absorber layer synthesized at preheating duration of 15 min shows that a power conversion efficiency up to 0.76% for a 0.19 cm{sup 2} area. The electrical characterization of CTS TFSC is first studied by electrochemical impedance spectroscopy, which implies the existence of MoS{sub x} and defects in the CTS/CdS interface. - Highlights: • CTS thin films and solar cells prepared by RF magnetron sputtering. • Preheating duration is a critical way to remain the Sn content in CTS thin film. • XRD, Raman, FTIR and XPS confirmed the single phase of CTS thin film. • The device characterization of CTS solar cell has been systematically investigated.

  16. Preparation and thermoelectric properties of RF co-sputtered CoSb{sub 3} skutteruddite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz [University of Science and Technology, Daejeon (Korea, Republic of); Han, Seungwoo [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of); University of Science and Technology, Daejeon (Korea, Republic of)

    2014-11-15

    Various skutterudites have been under investigation because of their potential application in thermoelectric materials and devices. These studies indicate that bulk materials with a skutterudite type structure show reasonable thermoelectric behaviors at elevated temperatures, which make them suitable for high-temperature thermoelectric applications. The results of thermoelectric-property measurements on skutterudite-phase CoSb{sub 3} thin films are presented in this study in order to extend the bulk material concept to micro-device applications by using thin film deposition technology. Thin films are deposited on oxidized silicon substrates by using the RF co-sputtering method. The film's composition is found to depend strongly on the deposition conditions. The temperature at which the deposited films transition from an amorphous state to a crystalline state has been reported to be about 153 .deg. C. Therefore, some experiments are performed with the substrate temperature kept at 200 .deg. C to obtain polycrystalline films. The crystal structure of the film is evaluated by using x-ray diffraction (XRD) measurements. Energy dispersive spectroscopy (EDS) is used to determine the film's composition whereas the surface morphology and the thickness are investigated and measured by using scanning electron microscopy (SEM). Finally, the thermoelectric properties, namely, the electrical resistivity and the Seebeck coefficient, are used to calculate the power factor of the deposited thin films and, their variations with temperature are measured. We report a maximum power factor of 0.41 mW/mK{sup 2} for the film deposited at a 200 .deg. C substrate temperature.

  17. Sequential sputtered Co-HfO{sub 2} granular films

    Energy Technology Data Exchange (ETDEWEB)

    Chadha, M.; Ng, V.

    2017-03-15

    A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

  18. Structural and corrosive properties of ZrO2 thin films on zircaloy-4 by RF reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Soo Ho; Lee, Kwang Hoon; Ko, Jae Hwan; Yoon, Young Soo; Baek, Jong Hyuk; Lee, Sang Jin

    2006-01-01

    Zirconium-oxide (ZrO 2 ) thin films as protective layers were grown on a Zircaloy-4 (Z-4) cladding material as a substrate by RF reactive magnetron sputtering at room temperature. To investigate the effect of plasma immersion on the structural and the corrosive properties of the as-grown ZrO 2 thin film, we immersed Z-4 in plasma during the deposition process. X-ray diffraction (XRD) measurements showed that the as-grown ZrO 2 thin films immersed in plasma had cubic, well as monoclinic and tetragonal, phases whereas those immersed in the plasma had monoclinic and tetragonal phases only. Atomic force microscopy (AFM) measurements of the surface morphology showed that the surface roughness of the as-grown ZrO 2 thin films immersed in plasma was larger than that of the films not immersed in plasma. In addition, the corrosive property of the as-grown ZrO 2 thin films immersed in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the non-immersed films, the weight gains of the immersed films were larger. These results indicate that the ZrO 2 films immersed in plasma cannot protect Z-4 from corrosive phenomena.

  19. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  20. Characterization of high quality Cu(In,Ga)Se{sub 2} thin films prepared by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bouchama, Idris [Departement d' Electronique, Faculte de Technologie, Universite de Msila (Algeria); Djessas, Kamal [Laboratoire Procedes Materiaux et Energie Solaire, PROMES-CNRS, Rambla de la Thermodynamique, Technosud, 66100 Perpignan (France); Bouloufa, Abdeslam [Laboratoire d' Electrochimie et Materiaux, Universite Ferhat Abbas de Setif (Algeria); Gauffier, Jean-Luc [Departement de Physique, INSA de Toulouse, 135, Avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

    2013-01-15

    This paper reports the production of high quality polycrystalline thin layers of CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} (CIGS), using rf-magnetron sputtering, from a powder target. These films are designed to be used as absorbers in solar cells. The depositions were carried out at substrate temperatures below 250 C and glass substrates was used. The influence of the substrate temperatures on the crystalline quality as well as structural, optical and electrical properties of thin layers obtained has been studied. X-ray diffraction showed that the films were highly orientated in the (112) and/or (204)/(220) direction. In{sub 2}Se{sub 3} secondary phase was observed on the samples grown at lower substrate temperatures. The surface morphology of CIGS layers studied by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) has been also discussed. The most surprising and exciting outcome of this study was that the as grown films were of near stoichiometric composition. Resistivity measurements were carried out using the four point probe method. The optical absorption showed that energy gap values are between 1.13 and 1.18 eV and rather sharp absorption fronts. Thin film resistivities are between 10.7 and 60.9 {Omega}.cm depending on the experimental growth conditions (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    International Nuclear Information System (INIS)

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-01-01

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  2. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  3. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Jahodova, Vera; Ding, Xing-zhao; Seng, Debbie H.L.; Gulbinski, W.; Louda, P.

    2013-01-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power

  4. On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films

    Czech Academy of Sciences Publication Activity Database

    Gutwirth, J.; Wágner, T.; Bezdička, Petr; Hrdlička, M.; Vlček, Milan; Frumar, M.

    2009-01-01

    Roč. 355, 37-42 (2009), s. 1935-1938 ISSN 0022-3093 R&D Projects: GA MŠk LC523; GA ČR GA203/06/1368 Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40500505 Keywords : amorphous semiconductors * films and coatings * sputtering Subject RIV: CA - Inorganic Chemistry Impact factor: 1.252, year: 2009

  5. Evaluation of Cu2ZnSnS4 Absorber Films Sputtered from a Single, Quaternary Target

    OpenAIRE

    Carlhamn Rasmussen, Liv

    2013-01-01

    Cu2ZnSnS4 (CZTS) is a promising absorber material for thin-film solar cells since it contains no rare or toxic elements, has a high absorption coefficient and a near ideal bandgap energy. It does, however, present some challenges due to the limited single-phase region of the desired kesterite phase and its instability towards decomposition. Sputtering of CZTS from quaternary, compound targets using RF magnetron sputtering is known. In this thesis work CZTS absorbers were made using pulsed DC ...

  6. Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

    International Nuclear Information System (INIS)

    Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

    2015-01-01

    We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

  7. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    International Nuclear Information System (INIS)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-01-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  8. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    Science.gov (United States)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-05-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  9. Radio frequency sputtering equipment: design considerations for the disc and annulus system

    International Nuclear Information System (INIS)

    Usher, D.M.; Cox, G.A.

    1981-01-01

    The basic equations important in the design of rf sputtering equipment are presented. Attention is restricted to the 'disc and annulus' system and simple techniques in lead-through fabrication and electrode shielding are described. Also rf power oscillator theory is used to derive the important parameters of power generation. Load coupling and power matching techniques are discussed. Problems of the magnetic field coil design are analysed and a value for the thermal conductivity of coils wound from polyurethane coated wire is given, namely k = 0.64 W m -1 / 0 C -1 , permitting the steady state temperature distribution inside such coils to be predicted. (author)

  10. Effect of Ti Doping to Maintain Structural Disorder in InOx-Based Thin-Film Transistors Fabricated by RF Magnetron Sputtering

    Science.gov (United States)

    Aikawa, Shinya

    2017-12-01

    The effect of Ti doping in an indium oxide (InOx)-based semiconductor is investigated for the thin-film transistor (TFT) property and crystal structure of the film. InOx and Ti-doped InOx (InTiOx) films deposited by RF magnetron sputtering under the same O2 partial pressure conditions were systematically compared. The TFT behavior of the InOx showed higher conductivity than that of the InTiOx and was drastically changed to metallic conduction after annealing at 150 °C. Under the annealing conditions when the electrical transition to the metallic behavior occurred, the InOx film was crystallized. The X-ray diffraction analysis revealed that the shrinkage of the In2O3 unit cell is pronounced in the case of InOx films. Thus, Ti dopants may play the role as a suppressor for shrinkage of the unit cell, i.e. maintaining neighboring In-In distances, in addition to suppression of oxygen vacancies. The In-In distance, which is related to the overlapping of In 5 s orbitals, is considered to be one of the key factor for which InOx-based materials are utilized as conducting films or semiconducting channels.

  11. Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

    Science.gov (United States)

    Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

    2018-06-01

    This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

  12. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Science.gov (United States)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  13. Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

    International Nuclear Information System (INIS)

    Huang, C.-L.; Hsu, C.-H.

    2004-01-01

    Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O 2 ) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different Ar/O 2 ratios and substrate temperatures have been investigated. The surface structural and morphological characteristics analyzed by x-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as Ar/O 2 ratio (100/0-80/20) and substrate temperature (350 deg. C-450 deg. C). The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the films increased with the increase of both the Ar partial pressure and the substrate temperature. At a Ar/O 2 ratio of 100/0, rf power level of 350 W and substrate temperature of 450 deg. C, the Zr 0.8 Sn 0.2 TiO 4 films with 6.44 μm thickness possess a dielectric constant of 42 (at 10 MHz), a dissipation factor of 0.065 (at 10 MHz), and a leakage current density of 2x10 -7 A/cm 2 at an electrical field of 1 kV/cm

  14. Study of the role of the interface between niobium films and copper RF resonators

    CERN Document Server

    Benvenuti, Cristoforo; Campisi, I E; Darriulat, Pierre; Peck, M A; Russo, R

    1997-01-01

    Niobium-coated copper resonators are usually produced with an oxide interface between the film and the substrate. This oxide has two sources: the passivation layer inevitably formed on the surface of the cavity after chemical preparation before coating, and the niobium oxide which builds up on the surface of the cathode when it is exposed to air, and is transferred to the cavity surface during coa ting. The oxide layer may influence both the purity and the structural properties of the film, and in turn its RF behaviour. To study its effect, some cavities have been coated with a special two-cath ode sputtering system, allowing for a complete removal of both oxide layers by sputter-etching. For comparison, a few cavities have also been produced with the same coating system without sputter-etch ing, or with a controlled oxidation of the copper surface of the cavity after sputter-etching. Two cavities have also been produced without oxide interface using Kr and Ne as sputter gas instead of Ar .

  15. Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

    Science.gov (United States)

    Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

    2018-03-01

    ZnO has potential application in the field of short wavelength devices like LED's, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA0) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

  16. Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

    Science.gov (United States)

    Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

    2014-10-01

    Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

  17. Study on the preparation of boron-rich film by magnetron sputtering in oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Zhangmin; Yang, Yiming; Huang, Jian; Ren, Bing; Yu, Hongze; Xu, Run; Ji, Huanhuan; Wang, Lin; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • Boron ({sup 10}B) oxide films were successfully grown using RF magnetron sputtering. • Effects of oxygen partial pressure on the property of the films were studied. • Substrates were covered with B-rich film and film surface was covered with B{sub 2}O{sub 3}. • The growth mechanism of films in oxygen atmosphere was analyzed using XPS. - Abstract: In this paper, the growth of boron ({sup 10}B) oxide films on (1 0 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B{sub 2}O{sub 3}. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.

  18. H2O2 sensing using HRP modified catalyst-free ZnO nanorods synthesized by RF sputtering

    Science.gov (United States)

    Srivastava, Amit; Kumar, Naresh; Singh, Priti; Singh, Sunil Kumar

    2017-06-01

    Catalyst-free ( 00 l) oriented ZnO nanorods (NRs) -based biosensor for the H2O2 sensing has been reported. The (002) oriented ZnO NRs as confirmed by X-ray diffraction were successfully grown on indium tin oxide (ITO) coated glass substrate by radio frequency (RF) sputtering technique without using any catalyst. Horseradish peroxidase (HRP) enzyme was immobilized on ZnO NRs by physical adsorption technique to prepare the biosensor. In this HRP/ZnO NR/ITO bioelectrode, nafion solution was added to form a tight membrane on surface. The prepared bioelectrode has been used for biosensing measurements by electrochemical analyzer. The electrochemical studies reveal that the prepared HRP/ZnO NR/ITO biosensor is highly sensitive to the detection of H2O2 over a linear range of 0.250-10 μM. The ZnO NR-based biosensor showed lower value of detection limit (0.125 μM) and higher sensitivity (13.40 µA/µM cm2) towards H2O2. The observed value of higher sensitivity attributed to larger surface area of ZnO nanostructure for effective loading of HRP besides its high electron communication capability. In addition, the biosensor also shows lower value of enzyme's kinetic parameter (Michaelis-Menten constant, K m) of 0.262 μM which indicates enhanced enzyme affinity of HRP to H2O2. The reported biosensor may be useful for various applications in biosensing, clinical, food, and beverage industry.

  19. Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

    Science.gov (United States)

    Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

    2015-04-01

    The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

  20. Microstructure and properties of in-situ rf sputtered YBa{sub 2}Cu{sub 3}O{sub 7} thin films for microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Reagor, D.W.; Houlton, R.J.; Garzon, F.H.; Hawley, M.; Raistrick, I.D. [Los Alamos National Lab., NM (United States); Piza, M.E. [Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science

    1992-06-01

    The residual surface resistance of a number of films of YBa{sub 2}Cu{sub 3}O{sub 7}, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45{degrees}-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.

  1. Microstructure and properties of in-situ rf sputtered YBa sub 2 Cu sub 3 O sub 7 thin films for microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Reagor, D.W.; Houlton, R.J.; Garzon, F.H.; Hawley, M.; Raistrick, I.D. (Los Alamos National Lab., NM (United States)); Piza, M.E. (Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science)

    1992-01-01

    The residual surface resistance of a number of films of YBa{sub 2}Cu{sub 3}O{sub 7}, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45{degrees}-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.

  2. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  3. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  4. Optical and structural characterization of titanium dioxide films growth by the r f-sputtering technique; Caracterizacion optica y estructural de peliculas de dioxido de titanio crecidas por la tecnica de rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Florido C, A.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Mendoza A, J.G.; Becerril, M.; Zelaya A, O. [CINVESTAV, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2007-07-01

    Full text: The elaboration of a series of grown films of TiO on Corning glaze substrates, as well as silicon, by means of the rf-sputtering technique using one power of 160 watts, with the objective of obtaining the anatase phase which one presents better activity for applications in photo catalysis. In the process of growth it was used a temperature in the range from 300 to 600 C and a separation distance among the target and the substrate of 3.5 cm. The used atmosphere was a mixture of argon and oxygen. It was carried out the characterization of the films obtained by means of UV-vis spectrophotometry, and photoluminescence (FL). The microstructure analysis was carried out by means of X-ray diffraction (XRD), micro-Raman (MR), and atomic force microscopy (AFM). By means of the diffractographs it was determined the grain size. Our results show that in our films they are present the anatase and rutile phases of the titanium dioxide. The analysis of the results of optical spectra shows a forbidden band of the titanium dioxide around 3.2 eV. (Author)

  5. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    International Nuclear Information System (INIS)

    Hussain, Amreen A.; Pal, Arup R.; Kar, Rajib; Bailung, Heremba; Chutia, Joyanti; Patil, Dinkar S.

    2014-01-01

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO 2 ) nanocomposite thin films. The deposition of PPani-TiO 2 nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO 2 nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO 2 nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H 2 SO 4 doping in PPani-TiO 2 nanocomposite. • PPani-TiO 2 nanocomposite based self-powered-hybrid photodetector

  6. Microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang Tianjin; Li Songzhan; Zhang Baishun; Pan Ruikun; Jiang Juan; Huang Weihua

    2005-01-01

    Ba 0.65 Sr 0.35 TiO 3 thin films have been prepared by RF magnetron sputtering. The crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), scan electronic microstructure (SEM) and atom force microstructure (AFM). As-deposited thin films were found to be amorphous. The more intense characteristic diffraction peaks and improved crystallization can be observed in (Ba,Sr)TiO 3 (BST) thin films deposited at high temperatures and annealed at higher than 650degC. Optical constants were determined from transmittance spectra by using the envelope method. The refractive index increased from 1.778 to 1.961 as the substrate temperature increased from 560 to 650degC. Both the refractive index and extinction coefficient increased with annealing temperature. The refractive index and extinction coefficient increased when the oxygen-to-argon ratio increased from 1:4 to 1:1. The dispersion of relation of the extinction coefficient vs wavelength was also investigated. The optical band gap of BST thin films was found to be about 3.56 eV, which decreased apparently with increasing annealing temperature. (author)

  7. Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by reactive DC/RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Barshilia, Harish C.; Selvakumar, N.; Rajam, K.S. [Surface Engineering Division, National Aerospace Laboratories, Bangalore 560 017 (India); Biswas, A. [Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

    2008-11-15

    Spectrally selective TiAlN/AlON tandem absorbers were deposited on copper and stainless steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and thicknesses of the individual component layers were optimized to achieve high absorptance ({alpha}=0.931-0.942) and low emittance ({epsilon}=0.05-0.06) on copper substrate. The experimental spectroscopic ellipsometric data have been fitted with the theoretical models to derive the dispersion of the optical constants (n and k). In order to study the thermal stability of the tandem absorbers, they were subjected to heat treatment (in air and vacuum) for different durations and temperatures. The tandem absorber deposited on Cu substrates exhibited high solar selectivity ({alpha}/{epsilon}) of 0.946/0.07 even after heat treatment in air up to 600 C for 2 h. At 625 C, the solar selectivity decreased significantly on Cu substrates (e.g., {alpha}/{epsilon}=0.924/0.30). The tandem absorber on Cu substrates was also stable in air up to 100 h at 400 C with a solar selectivity of 0.919/0.06. Studies on the accelerated aging tests indicated that the activation energy for the degradation of the tandem absorber is of the order of 100 kJ/mol. (author)

  8. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    NARCIS (Netherlands)

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  9. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  10. Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

    Science.gov (United States)

    Jong, Chao-An; Gan, Jon-Yiew

    2000-02-01

    Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

  11. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  12. Sputter deposition system for controlled fabrication of multilayers

    International Nuclear Information System (INIS)

    Di Nardo, R.P.; Takacs, P.Z.; Majkrzak, C.F.; Stefan, P.M.

    1985-06-01

    A detailed description of a sputter deposition system constructed specifically for the fabrication of x-ray and neutron multilayer monochromators and supermirrors is given. One of the principal design criteria is to maintain precise control of film thickness and uniformity over large substrate areas. Regulation of critical system parameters is fully automated so that response to feedback control information is rapid and complicated layer thickness sequences can be deposited accurately and efficiently. The use of either dc or rf magnetron sources makes it possible to satisfy the diverse material requirements of both x-ray and neutron optics

  13. Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-03-15

    The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

  14. Niobium films produced by magnetron sputtering using an Ar-He mixture as discharge gas

    CERN Document Server

    Schucan, G M; Calatroni, Sergio

    1995-01-01

    Superconducting RF accelerating cavities have been produced at CERN by sputter-coating, with a thin niobium layer, cavities made of copper. In the present work, the discharge behaviour and niobium film properties have been investigated when part of the argon sputtering gas is replaced with helium. Helium is chosen because of its low mass, which reduces the energy lost by the niobium atoms colliding with the sputter gas atoms. The higher niobium atom energy should lead to higher adatom mobility on the substrate and, hence, to a larger grain size, a feature which is highly desirable to reduce the cavity surface resistance. It has been found that helium addition effectively helps to maintain the discharge at considerably lower argon pressures, via metastable-neutral ionisation and high secondary electron yield. However, a large amount of helium is trapped in the film, amount which is proportional to the helium partial pressure during the discharge, resulting in a reduction of both Residual Resistivity Ratio and ...

  15. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Amreen A. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Pal, Arup R., E-mail: arpal@iasst.gov.in [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Kar, Rajib [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India); Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Patil, Dinkar S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India)

    2014-12-15

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO{sub 2}) nanocomposite thin films. The deposition of PPani-TiO{sub 2} nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO{sub 2} nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO{sub 2} nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H{sub 2}SO{sub 4} doping in PPani-TiO{sub 2} nanocomposite. • PPani-TiO{sub 2} nanocomposite based self-powered-hybrid photodetector.

  16. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

    2016-01-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  17. Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

    Science.gov (United States)

    Müllerová, Jarmila; Šutta, Pavol; Medlín, Rostislav; Netrvalová, Marie; Novák, Petr

    2017-12-01

    In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of ZnTiO3 perovskite thin films deposited on glass by reactive magnetron co-sputtering. The members of the series differ by the titanium content that was revealed as an origin of the changes not only in structure but also in dispersive optical properties. Low porosity has been discovered and calculated using the Bruggeman effective medium approximation. An apparent blue-shift of the optical band gap energies with increasing titanium content was observed. The observed band gap engineering is a good prospective for eg optoelectronic and photocatalytic applications of ZnTiO3.

  18. Electrical properties of SrBi2Ta2O9 thin films deposited on Si (100) substrates by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Roy, A.; Jha, G.; Dhar, A.; Ray, S.K.; Manna, I.

    2008-01-01

    Recently, metal-ferroelectric-semiconductor (MFS) structures have attracted much attention because of its potentials as nonvolatile memory device with nondestructive readout operation. In the present study ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films are grown on p-type (100) Si substrates by rf magnetron sputtering method at different deposition conditions. The crystallinity of the films is studied using grazing incidence X-ray diffraction (GIXRD) pattern. The spectra show the film are polycrystalline with dominant orientation along (115) plane. The capacitance-voltage (C-V) characteristics of Al/SBT/Si capacitors were measured at 100 kHz. The (C-V) characteristic of AI/SBT/Si capacitor post-annealed at 700-800 deg C shows a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop is 0.88 V when the gate voltage is ± 5 V. The interface trap density (D it ) calculated by using Hills method at room temperature and a value in the order of 10 11 -10 12 eV -1 cm -2 was found at mid gap region depending on the crystallization temperature. The surface morphology was investigated by atomic force microscope (AFM). The study showed the potential of SBT for application in metal- ferroelectric-silicon nonvolatile memory devices. (author)

  19. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers

    Energy Technology Data Exchange (ETDEWEB)

    Huang Zhanyun; Chen Min; Chen Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China); Pan Shirong, E-mail: stscdh@mail.sysu.edu.c [Artificial Heart Lab, the 1st Affiliate Hospital of Sun Yat-Sen University, Guangzhou 510080 (China)

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  20. Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni–Mn–Ga thin film on PMN–PT

    International Nuclear Information System (INIS)

    Teferi, M.Y.; Amaral, V.S.; Lounrenco, A.C.; Das, S.; Amaral, J.S.; Karpinsky, D.V.; Soares, N.; Sobolev, N.A.; Kholkin, A.L.; Tavares, P.B.

    2012-01-01

    In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni–Mn–Ga (NMG) alloy and lead magnesium niobate–lead titanate (PMN–PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 °C) deposition of the film on single crystal of piezoelectric PMN–PT substrate using rf magnetron co-sputtering of Ni 50 Mn 50 and Ni 50 Ga 50 targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of ∼240 emu/cm 3 and Curie temperature of ∼337 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (α ME ) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal–Transverse (L–T) ME coupling mode by lock-in technique. A maximum ME coefficient α ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN–PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. - Highlights: ► Multiferroic NMG/PMN–PT heterostructure prepared by depositing NMG alloy thin film on PMN–PT substrate. ► The film is in ferromagnetically ordered martensite state at room temperature. ► The substrate maintains its piezoelectric state after deposition. ► The heterostructure exhibits ME effect with maximum of α ME of 3.02 mV/cm Oe.

  1. Structural and optical properties of electro-optic material. Sputtered (Ba,Sr)TiO3

    International Nuclear Information System (INIS)

    Suzuki, Masato; Xu, Zhimou; Tanushi, Yuichiro; Yokoyama, Shin

    2006-01-01

    In order to develop a novel ring resonator optical switch, we have studied the structural and optical properties of the electro-optic material (Ba,Sr)TiO 3 (BST) deposited by RF sputtering on a SiO 2 cladding layer (1.0 μm). The crystallinity of the BST films is evaluated by X-ray diffraction and the optical propagation loss of the waveguides is measured using a He-Ne laser. As a result, it is found that there is a strong relationship between the optical propagation loss and crystallinity of the sputtered film. It is suggested that the propagating light is influenced by the crystal property, for example, the grain size and density of the polycrystalline BST film. (author)

  2. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    International Nuclear Information System (INIS)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

  3. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  4. Impact of self-assembled monolayer assisted surface dipole modulation of PET substrate on the quality of RF-sputtered AZO film

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Thieu Thi Tien [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Faculty of Chemical Engineering and Food Technology, Ba Ria-Vung Tau University, Vung Tau (Viet Nam); Mahesh, K.P.O. [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Lin, Pao-Hung [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tai, Yian, E-mail: ytai@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2017-05-01

    Highlights: • We use SAMs functionalizing the PET substrates to generate different surface dipoles. • We deposited AZO film on pristine and SAMs-modified PET substrate. • The positive dipole moment of PET surface promotes the crystallinity of AZO film. • The negative dipole moment of PET surface deteriorates the crystallinity of AZO film. • The electrical properties of AZO/PET changes upon the variation of the crystallinity. - Abstract: In this study, we fabricated the electron donating/withdrawing group functionalized organosilane self-assembled monolayers (SAMs) on transparent polyethylene terephthalate (PET) flexible substrate followed by the deposition of aluminum doped zinc oxide (AZO) using RF magnetron sputtering at room temperature. The effect of different SAMs on transparent PET substrates and AZO films were studied by contact angle (CA), X-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM), X-ray diffraction (XRD), Field-Emission scanning electron microscope (FE-SEM), Hall measurement and UV–vis spectroscopy (UV–vis). The results presented that the surface dipole (i.e. electron-donating/withdrawing) of different SAMs functionalized PET substrates affected the quality of the AZO films which deposited on top of them. The crystallinity, the charge mobility, and the carrier concentration of the AZO improved when the film was deposited on the PET functionalized with electron donating group, which was possibly due to favored interaction between electron donating group and Al ions.

  5. Impact of self-assembled monolayer assisted surface dipole modulation of PET substrate on the quality of RF-sputtered AZO film

    International Nuclear Information System (INIS)

    Vo, Thieu Thi Tien; Mahesh, K.P.O.; Lin, Pao-Hung; Tai, Yian

    2017-01-01

    Highlights: • We use SAMs functionalizing the PET substrates to generate different surface dipoles. • We deposited AZO film on pristine and SAMs-modified PET substrate. • The positive dipole moment of PET surface promotes the crystallinity of AZO film. • The negative dipole moment of PET surface deteriorates the crystallinity of AZO film. • The electrical properties of AZO/PET changes upon the variation of the crystallinity. - Abstract: In this study, we fabricated the electron donating/withdrawing group functionalized organosilane self-assembled monolayers (SAMs) on transparent polyethylene terephthalate (PET) flexible substrate followed by the deposition of aluminum doped zinc oxide (AZO) using RF magnetron sputtering at room temperature. The effect of different SAMs on transparent PET substrates and AZO films were studied by contact angle (CA), X-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM), X-ray diffraction (XRD), Field-Emission scanning electron microscope (FE-SEM), Hall measurement and UV–vis spectroscopy (UV–vis). The results presented that the surface dipole (i.e. electron-donating/withdrawing) of different SAMs functionalized PET substrates affected the quality of the AZO films which deposited on top of them. The crystallinity, the charge mobility, and the carrier concentration of the AZO improved when the film was deposited on the PET functionalized with electron donating group, which was possibly due to favored interaction between electron donating group and Al ions.

  6. Efficient planar n-i-p type heterojunction flexible perovskite solar cells with sputtered TiO2 electron transporting layers.

    Science.gov (United States)

    Mali, Sawanta S; Hong, Chang Kook; Inamdar, A I; Im, Hyunsik; Shim, Sang Eun

    2017-03-02

    The development of hybrid organo-lead trihalide perovskite solar cells (PSCs) comprising an electron transporting layer (ETL), a perovskite light absorber and a hole transporting layer (HTL) has received significant attention for their potential in efficient PSCs. However, the preparation of a compact and uniform ETL and the formation of a uniform light absorber layer suffer from a high temperature processing treatment and the formation of unwanted perovskite islands, respectively. A low temperature/room temperature processed ETL is one of the best options for the fabrication of flexible PSCs. In the present work, we report the implementation of a room temperature processed compact TiO 2 ETL and the synthesis of extremely uniform flexible planar PSCs based on methylammonium lead mixed halides MAPb(I 1-x Br x ) 3 (x = 0.1) via RF-magnetron sputtering and a toluene dripping treatment, respectively. The compact TiO 2 ETLs with different thicknesses (30 to 100 nm) were directly deposited on a flexible PET coated ITO substrate by varying the RF-sputtering time and used for the fabrication of flexible PSCs. The photovoltaic properties revealed that flexible PSC performance is strongly dependent on the TiO 2 ETL thickness. The open circuit voltage (V OC ) and fill factor (FF) are directly proportional to the TiO 2 ETL thickness while the 50 nm thick TiO 2 ETL shows the highest current density (J SC ) of 20.77 mA cm -2 . Our controlled results reveal that the room temperature RF-magnetron sputtered 50 nm-thick TiO 2 ETL photoelectrode exhibits a power conversion efficiency (PCE) in excess of 15%. The use of room temperature synthesis of the compact TiO 2 ETL by RF magnetron sputtering results in an enhancement of the device performance for cells prepared on flexible substrates. The champion flexible planar PSC based on this architecture exhibited a promising power conversion efficiency as high as 15.88%, featuring a high FF of 0.69 and V OC of 1.108 V with a negligible

  7. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

    International Nuclear Information System (INIS)

    Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

    2005-01-01

    The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

  8. Sputtered catalysts

    International Nuclear Information System (INIS)

    Tyerman, W.J.R.

    1978-01-01

    A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

  9. Effect of annealing on properties of gallium-nitrogen Co-doped zinc oxide thin films prepared by sputtering and ion implantation

    International Nuclear Information System (INIS)

    Flickyngerova, S.; Vojs, M.; Novotny, I.; Tvarozek, V.; Shtereva, K. S.; Sutta, P.; Vincze, A.; Milosavlevic, M.; Jeynes, Ch.; Peng, N.

    2012-01-01

    In this paper we report an influence of post-implantation annealing (in O 2 and N 2 up to 600 grad C) on electrical and structural properties of RF sputtered ZnO:Ga thin films implanted by double energy (40 keV and 80 keV) N + ions. (authors)

  10. RF Characterization of Niobium Films for Superconducting Cavities

    CERN Document Server

    Aull† , S; Doebert, S; Junginger, T; Ehiasarian, AP; Knobloch, J; Terenziani, G

    2013-01-01

    The surface resistance RS of superconductors shows a complex dependence on the external parameters such as temperature, frequency or radio-frequency (RF) field. The Quadrupole Resonator modes of 400, 800 and 1200 MHz allow measurements at actual operating frequencies of superconducting cavities. Niobium films on copper substrates have several advantages over bulk niobium cavities. HIPIMS (High-power impulse magnetron sputtering) is a promising technique to increase the quality and therefore the performance of niobium films. This contribution will introduce CERNs recently developed HIPIMS coating apparatus. Moreover, first results of niobium coated copper samples will be presented, revealing the dominant loss mechanisms.

  11. Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

    2011-08-15

    In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Construction of sputtering system and preparation of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  13. Mechanical properties of nanocrystalline palladium prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Castrup, Anna; Hahn, Horst [Forschungszentrum Karlsruhe (Germany); Technical University of Darmstadt (Germany); Scherer, Torsten; Ivanisenko, Yulia; Choi, In-Suk; Kraft, Oliver [Forschungszentrum Karlsruhe (Germany)

    2009-07-01

    Nanocrystalline metals and alloys with grain sizes well below 100 nm often demonstrate unique deformation behaviour and therefore attract a great interest in material science. The understanding of deformation mechanisms operating in nanocrystalline materials is important to predict their mechanical properties. In the present study Pd films of 1{mu}m thickness were prepared using UHV rf magnetron sputtering on dog bone shaped Kapton substrates and on Si/SiO2 wafers. The films were sputtered using multilayer technology with an individual layer thickness of 10 nm. This resulted in grain sizes of about 20 nm. Initial microstructure and texture were characterized using conventional XRD measurements and transmission electron microscopy (TEM) in both cross section- and plane view. The mechanical properties were investigated using tensile testing and nanoindentation at several strain rates. An increased hardness and strength as compared to coarse grained Pd was observed, as well as high strain rate sensitivity. The microstructure in the gauge section after tensile testing was again analyzed using TEM in order to reveal signatures of deformation mechanisms like dislocation motion or twinning.

  14. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  15. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

    2016-09-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  16. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Ming [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Kun, E-mail: kliu@mail.neu.edu.cn [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Xinghua [Hubei Aerospace Industry Technology Academe Special Vehicle Technology Center, Wuhan (China); Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China)

    2016-12-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  17. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-01-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  18. Improvement of the homogeneity of high mobility In{sub 2}O{sub 3}:H films by sputtering through a mesh electrode studied by Monte Carlo simulation and thin film analysis

    Energy Technology Data Exchange (ETDEWEB)

    Scherg-Kurmes, Harald; Hafez, Ahmad; Szyszka, Bernd [Technische Universitaet Berlin, Einsteinufer 25, 10587, Berlin (Germany); Siemers, Michael; Pflug, Andreas [Fraunhofer IST, Bienroder Weg 54E, 38108, Braunschweig (Germany); Schlatmann, Rutger [Helmholtz Zentrum Berlin, PVcomB, Schwarzschildstr. 3, 12489, Berlin (Germany); Rech, Bernd [Helmholtz Zentrum Berlin, Institute for Silicon Photovoltaics, Kekulestrasse 5, 12489, Berlin (Germany)

    2016-09-15

    Hydrogen-doped indium oxide (IOH) is a transparent conductive oxide offering great potential to optoelectronic applications because of its high mobility of over 100 cm{sup 2} V{sup -1}s{sup -1}. In films deposited statically by RF magnetron sputtering, a small area directly opposing the target center with a higher resistivity and lower crystallinity than the rest of the film has been found via hall- and XRD-measurements, which we attribute to plasma damage. In order to investigate the distribution of particle energies during the sputtering process we have simulated the RF-sputtering deposition process of IOH by particle-in-cell Monte Carlo (PICMC) simulation. At the surface of ceramic sputtering targets, negatively charged oxygen ions are created. These ions are accelerated toward the substrate in the plasma sheath with energies up to 150 eV. They damage the growing film and reduce its crystallinity. The influence of a negatively biased mesh inside the sputtering chamber on particle energies and distributions has been simulated and investigated. We found that the mesh decreased the high-energetic oxygen ion density at the substrate, thus enabling a more homogeneous IOH film growth. The theoretical results have been verified by XRD X-ray diffractometry (XRD), 4-point probe, and hall measurements of statically deposited IOH films on glass. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Influence of post-treatment on properties of Cu(In{sub ,}Ga)Se{sub 2} thin films deposited by RF magnetron sputtering using a quaternary single target for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sung Hee; Choi, Soon Ja; Chung, Chee Won, E-mail: cwchung@inha.ac

    2014-11-03

    The deposition of Cu(In,Ga)Se{sub 2} (CIGS) thin films has been performed by one-step RF sputtering using a single quaternary target and followed by sulfurization to incorporate S into CIGS films. The effect of sulfurization temperature and time on the properties of the films was studied. The sulfurized Cu(In,Ga)(Se,S){sub 2} (CIGSeS) films show that the chalcopyrite peaks shifted to high diffraction angles and the CuS and InS second phases could be formed at low sulfurization temperature. These indicate possible incorporation of S into the films. The formation and disappearance of these second phases depended on the sulfurization temperature and time. The band gap increased with increasing sulfurization temperature and time because of the shift of the absorption edge due to the increase of S/(S + Se) ratio. It was revealed that the resistivity of the as-deposited CIGS film increased after sulfurization while the carrier concentration and mobility decreased. It is believed that the sulfurization process of CIGS films can be utilized as a method to control the properties of the films. - Highlights: • Development of sputtering process of CIGS thin films using single quaternary target • Effect of sulfurization temperature and time on the properties of CIGS films • Application of sulfurization process to improve the properties of CIGS films • Successful transformation of CIGS films to chalcopyrite structure through post-sulfirization.

  20. InxGa1-xAs obtained from independent target via co-sputtering deposition

    International Nuclear Information System (INIS)

    Bernal-Correa, R; Torres-Jaramillo, S.; Pulzara-Mora, C.

    2017-01-01

    This paper is focused on the preparation of InGaAs thin films on GaAs substrates by r.f. magnetron sputtering technique, using the sputtering power as control means for the formation of different stoichiometries. Results of X-ray and Raman spectroscopy allowed corroborating the formation of In x Ga 1-x As in different concentrations, identifying peaks associated with crystallographic planes (X-rays) and characteristic vibrational phonon modes (Raman). An analysis performed with the Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS) techniques, allowed discussing on the composition in each of the layers. Finally, an alternative in obtaining the ternary semiconductor with polycrystalline structure and preferential growth along the direction (111) was demonstrated and generated by a technique different from the epitaxial techniques, which are commonly used for the growth of III-V semiconductors. (paper)

  1. Evaluation of the nanomechanical properties of vanadium and native oxide vanadium thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Mamun, M.A.; Zhang, K.; Baumgart, H.; Elmustafa, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • V films of 50, 75, 100 nm thickness were deposited on Si by RF magnetron sputtering. • We studied structural/mechanical properties by XRD, FE-SEM, AFM, and nanoindentation. • The hardness increased from 9.0 to 14.0 GPa for 100 to 50 nm. • The modulus showed no correlation with thickness or native oxide formation. • Native oxide formation resulted in grain enlargement and roughness reduction. - Abstract: Polycrystalline vanadium thin films of 50, 75, and 100 nm thickness were deposited by magnetron sputtering of a vanadium metal target of 2 inch diameter with 99.9% purity on native oxide covered Si substrates. One set of the fabricated samples were kept in moisture free environment and the other set was exposed to ambient air at room temperature for a long period of time that resulted in formation of native oxide prior to testing. The crystal structure and phase purity of the vanadium and the oxidized vanadium thin films were characterized by X-ray diffraction (XRD). The XRD results yield a preferential (1 1 0), and (2 0 0) orientation of the polycrystalline V films and (0 0 4) vanadium oxide (V 3 O 7 ). The vanadium films thickness were verified using field emission scanning electron microscopy and the films surface morphologies were inspected using atomic force microscopy (AFM). AFM images reveal surface roughness was observed to increase with increasing film thickness and also subsequent to oxidation at room temperature. The nanomechanical properties were measured by nanoindentation to evaluate the modulus and hardness of the vanadium and the oxidized vanadium thin films. The elastic modulus of the vanadium and the oxidized vanadium films was estimated as 150 GPa at 30% film thickness and the elastic modulus of the bulk vanadium target is estimated as 135 GPa. The measured hardness of the vanadium films at 30% film thickness varies between 9 and 14 GPa for the 100 and 50 nm films, respectively, exhibiting size effects

  2. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  3. Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate

    International Nuclear Information System (INIS)

    Hinoki, Toshio; Kyuhara, Chika; Agura, Hideaki; Yazawa, Kenji; Kinoshita, Kentaro; Ohmi, Koutoku; Kishida, Satoru

    2010-01-01

    Ga-doped ZnO (GZO) transparent conductive films have been prepared by RF plasma assisted DC magnetron sputtering under a reductive atmosphere on organic-buffer-layer (OBL) coated polyethylene telephthalate (PET) substrates without intentionally heating substrates. Electrical and optical properties, crystallinity, and environmental reliability of the GZO films have been investigated. The distributional characteristic of resistivity is observed in the GZO film deposited on the OBL-coated PET substrates. The high resistivity at facing the erosion area in the source target is reduced by providing the RF plasma and H 2 gas near the substrate, resulting in a uniform distribution of the sheet resistance. It has been also found that the increase of resistivity by an accelerated aging test performed under a storage condition at 60 o C and at a relative humidity of 95% is suppressed by employing the OBL. The OBL suppresses the formation of cracks, which are induced by the aging test. These facts are thought to contribute to a high environmental reliability of GZO films on PET substrates. Values of resistivity, Hall mobility and carrier concentration are obtained: 5.0-20 x 10 -3 Ω cm, 4.0 cm 2 /Vs, and 3.8 x 10 20 cm -3 , respectively. An average transmittance of the GZO film including OBL and PET substrate is 78% in a visible region. The OBL enables to realize the practical use of GZO films on PET sheets.

  4. Nylon-sputtered nanoparticles: fabrication and basic properties

    Science.gov (United States)

    Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

    2012-12-01

    Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

  5. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  6. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

    NARCIS (Netherlands)

    Yan, L.T.; Schropp, R.E.I.

    2011-01-01

    Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

  7. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Surmeneva, Maria A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Surmenev, Roman A., E-mail: rsurmenev@gmail.com [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB, 70569 Stuttgart (Germany); Nikonova, Yulia A.; Selezneva, Irina I. [Institute of Theoretical and Experimental Biophysics, Russian Academy of Sciences, Pushchino 142292 (Russian Federation); Ivanova, Anna A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Putlyaev, Valery I. [Department of Chemistry, Moscow State University, Vorobievi Gory, 1, Moscow 119991 (Russian Federation); Prymak, Oleg; Epple, Matthias [Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, 45117 Essen (Germany)

    2014-10-30

    Highlights: • Growth of a columnar grain structure perpendicular to the substrate surface was observed. • Interplanar spacing distances measured using HRTEM were 0.82 and 0.28 nm, corresponding to the (0 0 1) and (2 1 1) lattice planes of hexagonal HA. • Grain size and crystallinity increased when increasing the deposition time. • Nanometer-thick low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules. - Abstract: A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  8. Isotope puzzle in sputtering

    International Nuclear Information System (INIS)

    Zheng Liping

    1998-01-01

    Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

  9. Biased HiPIMS technology for superconducting rf accelerating cavities coating

    CERN Document Server

    G. Rosaz, G.; Sonato, D.; Calatroni, S.; Ehiasarian, A.; Junginger, T.; Taborelli, M.

    2016-01-01

    In the last few years the interest of the thin film science and technology community on High Impulse Power Magnetron Sputtering (HIPIMS) coatings has steadily increased. HIPIMS literature shows that better thin film morphology, denser and smoother films can be achieved when compared with standard dc Magnetron Sputtering (dcMS) coating technology. Furthermore the capability of HIPIMS to produce a high quantity of ionized species can allow conformal coatings also for complex geometries. CERN already studied the possibility to use such a coating method for SRF accelerating cavities. Results are promising but not better from a RF point of view than dcMS coatings. Thanks to these results the next step is to go towards a biased HiPIMS approach. However the geometry of the cavities leads to complex changes in the coating setup in order to apply a bias voltage. Coating system tweaking and first superconducting properties of biased samples are presented.

  10. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  11. Growth behavior of rat bone marrow cells on RF magnetron sputtered hydroxyapatite and dicalcium pyrophosphate coatings.

    NARCIS (Netherlands)

    Yan, Y.; Wolke, J.G.C.; Ruijter, A. De; Yubao, L.; Jansen, J.A.

    2006-01-01

    The aim of this study was to evaluate the osteogenic properties of magnetron sputtered dicalcium pyrophaosphate (DCPP) and hydroxylapatite (HA) coatings. Therefore, DCPP and HA coatings were deposited on grit-blasted titanium discs. The substrates were used as-prepared or received an additional heat

  12. Electron Heating Mode Transitions in Nitrogen (13.56 and 40.68) MHz RF-CCPs

    Science.gov (United States)

    Erozbek Gungor, Ummugul; Bilikmen, Sinan Kadri; Akbar, Demiral

    2015-09-01

    Capacitively coupled radio frequency plasmas (RF-CCPs) are commonly used in plasma material processing. Parametrical structure of the plasma determines the demands of processing applications. For example; high density plasmas in gamma mode are mostly preferred for etching applications while stabile plasmas in gamma mode are usually used in sputtering applications. For this reason, characterization of the plasma is very essential before surface modification of the materials. In this work, analysis of electron heating mode transition in high frequency (40.68 MHz) RF-CCP was deeply investigated. The plasma was generated in a home-made (500 × 400 mm2) stainless steel cylindrical reactor in which two identical (200 mm in diameter) electrodes were placed with 40 mm interval. In addition, L-type automatic matching network system was connected to the 40.68 MHz RF generator to get high accuracy. Moreover, the pure (99.995 %) nitrogen was used as an activation gas on account of having an appreciable impression in plasma processing applications. Furthermore, diagnostic measurements of the plasma were done by using the Impedans Langmuir single and double probe systems. It was found that two transition points; α- γ (pressure dependent) and γ- α (RF power dependent) were observed in both medium and high RF-CCPs. As a result, the α- γ pressure transition increased, whereas the γ- α power transition remained constant by changing the RF frequency sources.

  13. Study of the surface resistance of niobium sputter-coated copper cavities

    CERN Document Server

    Benvenuti, Cristoforo; Campisi, I E; Darriulat, Pierre; Peck, M A; Russo, R; Valente, A M

    1999-01-01

    A systematic study of the superconducting properties of niobium films deposited on the inner wall of copper radiofrequency cavities is presented. Films are grown by sputtering with different discharge gases (Xe, Kr, Ar and Ar/Ne mixtures) on substrates prepared under different conditions. The measured quantities include the surface resistance at 1.5 GHz, the critical temperature and the penetration depth. The surface resistance is analyzed in terms of its dependence on temperature, RF field and the density of trapped fluxons. Once allowance for electron scattering is made by means of a single mean free path parameter, good agreement with BCS theory is observed. The residual resistance is observed to be essentially noncorrelated with the superconducting properties, although influenced by specific coating conditions. On occasions, very low residual resistances, in the nano-ohm range, have been maintained over a broad range of RF field, indicating the absence of fundamental limitations specific to the film techn...

  14. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  15. Spectro-ellipsometric studies of sputtered amorphous Titanium dioxide thin films: simultaneous determination of refractive index, extinction coefficient, and void distribution

    CERN Document Server

    Lee, S I; Oh, S G

    1999-01-01

    Amorphous titanium dioxide thin films were deposited onto silicon substrates by using RF magnetron sputtering, and the index of refraction, the extinction coefficient, and the void distribution of these films were simultaneously determined from the analyses of there ellipsometric spectra. In particular, our novel strategy, which combines the merits of multi-sample fitting, the dual dispersion function, and grid search, was proven successful in determining optical constants over a wide energy range, including the energy region where the extinction coefficient was large. Moreover, we found that the void distribution was dependent on the deposition conditions, such as the sputtering power, the substrate temperature, and the substrate surface.

  16. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  17. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    Science.gov (United States)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  18. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-01-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  19. Sputtered PdO Decorated TiO2 Sensing Layer for a Hydrogen Gas Sensor

    Directory of Open Access Journals (Sweden)

    Jeong Hoon Lee

    2018-01-01

    Full Text Available We report a sputtered PdO decorated TiO2 sensing layer by radiofrequency (RF sputtering methods and demonstrated gas sensing performance for H2 gas. We prepared sputtered anatase TiO2 sensing films with 200 nm thickness and deposited a Pd layer on top of the TiO2 films with a thickness ranging from 3 nm to 13 nm. Using an in situ TiO2/Pd multilayer annealing process at 550°C for 1 hour, we observed that Pd turns into PdO by Auger electron spectroscopy (AES depth profile and confirmed decorated PdO on TiO2 sensing layer from scanning electron microscope (SEM and atomic-force microscope (AFM. We also observed a positive sensing signal for 3, 4.5, and 6.5 nm PdO decorated TiO2 sensor while we observed negative output signal for a 13.5 nm PdO decorated one. Using a microheater platform, we acquired fast response time as ~11 sec and sensitivity as 6 μV/ppm for 3 nm PdO under 33 mW power.

  20. PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

    Directory of Open Access Journals (Sweden)

    Roberto Bernal Correa

    2014-01-01

    Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

  1. Stability of sputter deposited ZnO:Cr films against acids

    International Nuclear Information System (INIS)

    Shinoda, Makoto; Nishide, Toshikazu; Sawada, Yutaka; Hosaka, Masato; Matsumoto, Toshihiko.

    1993-01-01

    ZnO:Cr films were deposited on water-cooled soda-lime glass substrates at room temperature in an Ar atmosphere by rf magnetron sputtering of a ZnO target on which Cr chips were placed. The films exhibited extraordinary stability against acids such as HCl or HNO 3 , and also high resistivities similar to those of ZnO films. The addition of Cr suppressed the growth of ZnO grains which resulted in the formation of a dense film with a smooth surface. The stability and high resistivity displayed by the ZnO:Cr films can be attributed to the formation of a chromium-oxide-rich grain boundary. (author)

  2. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Ottsen, Tobias Sand; Stamate, Eugen

    2016-01-01

    -pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase......The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate...... over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility....

  3. Mechanical properties and biocompatibility of the sputtered Ti doped hydroxyapatite.

    Science.gov (United States)

    Vladescu, A; Padmanabhan, S C; Ak Azem, F; Braic, M; Titorencu, I; Birlik, I; Morris, M A; Braic, V

    2016-10-01

    The hydroxyapatite enriched with Ti were prepared as possible candidates for biomedical applications especially for implantable devices that are in direct contact to the bone. The hydroxyapatites with different Ti content were prepared by RF magnetron sputtering on Ti-6Al-4V alloy using pure hydroxyapatite and TiO2 targets. The content of Ti was modified by changing the RF power fed on TiO2 target. The XPS and FTIR analyses revealed the presence of hydroxyapatite structure. The hardness and elastic modulus of the hydroxyapatite were increased by Ti addition. After 5 days of culture, the cell viability of the Ti-6Al-4V was enhanced by depositing with undoped or doped hydroxyapatite. The Ti additions led to an increase in cell viability of hydroxyapatite, after 5 days of culture. The electron microscopy showed the presence of more cells on the surface of Ti-enriched hydroxyapatite than those observed on the surface of the uncoated alloys or undoped hydroxyapatite. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

    Science.gov (United States)

    Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

    2017-12-26

    ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

  5. Plasma diagnostic studies of the influence of process variables upon the atomic and molecular species ejected from (1-x)Li4SiO4:xLi3PO4 targets during rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Wachs, A.L.; Bates, J.B.; Dudney, N.J.; Luck, C.F.

    1990-01-01

    The deposition of thin-film electrolytes is a critical step in the development of lithium microbatteries with the potential for circuit integration. We have performed a preliminary study of the rf-magnetron sputtering of (1-x)Li 4 SiO 4 :xLi 3 PO 4 targets used to deposit amorphous thin-film electrolytes formed of the three-component system Li 2 O--SiO 2 --P 2 O 5 . Mass and optical emission spectroscopies have been used to investigate the effects of target composition and the deposition conditions upon the atomic and molecular species ejected from the targets. The data provide important information for understanding the mechanism of film formation and for monitoring the Li atomic flux onto the substrates during film growth. 5 refs., 7 figs., 1 tab

  6. Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

    Science.gov (United States)

    Singh, Satyendra Kumar; Hazra, Purnima

    2018-05-01

    This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

  7. Time-Domain Modeling of RF Antennas and Plasma-Surface Interactions

    Directory of Open Access Journals (Sweden)

    Jenkins Thomas G.

    2017-01-01

    Full Text Available Recent advances in finite-difference time-domain (FDTD modeling techniques allow plasma-surface interactions such as sheath formation and sputtering to be modeled concurrently with the physics of antenna near- and far-field behavior and ICRF power flow. Although typical sheath length scales (micrometers are much smaller than the wavelengths of fast (tens of cm and slow (millimeter waves excited by the antenna, sheath behavior near plasma-facing antenna components can be represented by a sub-grid kinetic sheath boundary condition, from which RF-rectified sheath potential variation over the surface is computed as a function of current flow and local plasma parameters near the wall. These local time-varying sheath potentials can then be used, in tandem with particle-in-cell (PIC models of the edge plasma, to study sputtering effects. Particle strike energies at the wall can be computed more accurately, consistent with their passage through the known potential of the sheath, such that correspondingly increased accuracy of sputtering yields and heat/particle fluxes to antenna surfaces is obtained. The new simulation capabilities enable time-domain modeling of plasma-surface interactions and ICRF physics in realistic experimental configurations at unprecedented spatial resolution. We will present results/animations from high-performance (10k-100k core FDTD/PIC simulations of Alcator C-Mod antenna operation.

  8. Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

    International Nuclear Information System (INIS)

    Huh, Jun-Young; Jeon, Jae-Hong; Choe, Hee-Hwan; Lee, Kang-Woong; Seo, Jong-Huyn; Ryu, Min-Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Cheong, Woo-Seok

    2011-01-01

    In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which have different compositional ratios of In:Ga:Zn, were used to make variations in the active layer composition. All the fabricated IGZO TFTs showed more excellent characteristics than conventional amorphous silicon TFTs. However, in accordance with the Ga content, IGZO TFTs showed somewhat different electrical characteristics in values such as the threshold voltage and the field effect mobility. The device stability was also dependent on the Ga content, but had trade-off relation with the electrical characteristics.

  9. Optical and structural properties of TiO2/Ti/Ag/TiO2 and TiO2/ITO/Ag/ITO/TiO2 metal-dielectric multilayers by RF magnetron sputtering for display application

    International Nuclear Information System (INIS)

    Lee, Jang-Hoon; Lee, Seung-Hyu; Hwangbo, Chang-Kwon; Lee, Kwang-Su

    2004-01-01

    Electromagnetic-interference (EMI) shielding and near-infrared (NIR) cutoff filters for plasma display panels, based on fundamental structures (ITO/Ag/ITO), (TiO 2 /Ti/Ag/TiO 2 ) and (TiO 2 /ITO/Ag/ITO/TiO 2 ), were designed and prepared by RF-magnetron sputtering. The optical, structural and electrical properties of the filters were investigated by using spectrophotometry, Auger electron spectroscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy, atomic force microscopy and four-point-probe measurements. The results show that ITO films as the barriers and base layers lead to higher transmittance in the visible spectrum and smoother surface roughness than Ti metal barriers, while maintaining high NIR cutoff characteristics and chemical stability, which may be attributed to the lower absorption in the interfacial layers and better protection of the Ag layers by the ITO layers.

  10. Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

    Science.gov (United States)

    Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

    2013-01-01

    Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

  11. Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

    Directory of Open Access Journals (Sweden)

    Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

    2005-01-01

    Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

  12. Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

    International Nuclear Information System (INIS)

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-01-01

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  13. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  14. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    International Nuclear Information System (INIS)

    Li Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

  15. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    Institute of Scientific and Technical Information of China (English)

    ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  16. Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma

    International Nuclear Information System (INIS)

    Asanuma, T.; Matsutani, T.; Liu, C.; Mihara, T.; Kiuchi, M.

    2004-01-01

    Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in 'pure oxygen' plasma by reactive radio-frequency (rf) magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: (a) no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; (b) rutile (110) diffraction was observed at 4.0 Pa, (c) the dominant diffraction was from anatase (101) planes, with additional diffraction from (200), under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications

  17. Irreversible thermochromic response of RF sputtered nanocrystalline BaWO4 films for smart window applications

    Directory of Open Access Journals (Sweden)

    C. Anil Kumar

    2015-10-01

    Full Text Available We report irreversible thermochromic behaviour of BaWO4 (BWO films for the first time. BWO films have been deposited at different substrate temperatures (RT, 200, 400, 600 and 800 °C using RF magnetron sputtering in pure argon plasma. BWO films deposited at 800 °C exhibit crystalline nature. Also, BWO films deposited in the temperature range of 400 - 600 °C exhibit WO3 as a secondary phase and its weight percentage decreases with an increase in deposition temperature, whereas the films deposited at 800 °C exhibited pure tetragonal phase. FESEM images revealed that as the average particle sizes of the films are higher as compared with the thickness of the films and is explained based on Avrami type nucleation and growth. The transmittance of the films decreases with an increase in deposition temperature up to 600 °C and increases thereafter. Films deposited at 600 °C show ≤ 20% transmittance, looking at the films deposited at room temperature and 800 °C exhibits 90 and 70%, respectively. The refractive index and extinction coefficient of the films show profound dependence on crystallinity and packing density. The optical bandgap of BWO films increases significantly with an increase in O2% during the deposition. The optical bandgap of the BWO films deposited at different temperatures in pure argon plasma, are in the range of 3.7 to 3.94 eV whereas the films deposited at 600 °C under different O2 plasma are in the range of 3.6 - 4.5 eV. The formations of colour centres are associated with the oxygen vacancies, which are clearly seen from the optical bandgap studies. The observed irreversible thermochromic behaviour in BWO films is attributed to the presence of oxygen vacancies that arises due to the electrons trapped at oxygen vacancies causing an inter valence charge transfer of W5+ to W6+ and is confirmed through the change in the optical density (ΔOD. Further, the Raman spectra are being used to quantify the presence

  18. Sputtering of water ice

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

  19. Electronic sputtering

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1989-01-01

    Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

  20. Structure of multilayered Cr(Al)N/SiO{sub x} nanocomposite coatings fabricated by differential pumping co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kawasaki, Masahiro [JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960 (United States); Nose, Masateru [Faculty of Art and Design, University of Toyama, 180 Futagami-machi, Takaoka 933-8588 (Japan); Onishi, Ichiro [JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan); Shiojiri, Makoto [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2013-11-11

    A Cr(Al)N/38 vol. % SiO{sub x} hard coating was prepared on a (001) Si substrate at 250 °C in a differential pumping co-sputtering system, which has two chambers for radio frequency (RF) sputtering and a substrate holder rotating on the chambers. The composite coating was grown by alternate sputter-depositions from CrAl and SiO{sub 2} targets with flows of N{sub 2}+Ar and Ar at RF powers of 200 and 75 W, respectively, on transition layers grown on the substrate. Analytical electron microscopy reveled that the Cr(Al)N/SiO{sub x} coating had a multilayered structure of Cr(Al)N crystal layers ∼1.6 nm thick and two-dimensionally dispersed amorphous silicon oxide (a-SiO{sub x}) particles with sizes of ∼1 nm or less. The a-SiO{sub x} particles were enclosed with the Cr(Al)N layers. The coating had a low indentation hardness of ∼25 GPa at room temperature, due to a high oxide fraction of 38 vol. % and a low substrate rotational speed of 1 rpm. Faster rotation and lower oxide fraction would make a-SiO{sub x} particles smaller, resulting in the formation of Cr(Al)N crystal including the very fine a-SiO{sub x} particles with small number density. They would work as obstacles for the lattice deformation of the Cr(Al)N crystals. We have fabricated a superhard coating of Cr(Al)N/17 vol. % SiO{sub x} with a hardness of 46 GPa prepared at 12 rpm.

  1. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  2. Production and characterization of Si-N films obtained by r.f. magnetron sputtering

    International Nuclear Information System (INIS)

    Oliveira, A.; Cavaleiro, A.; Vieira, M.T.

    1993-01-01

    Si-N films were deposited by sputtering from an Si 3 N 4 target with different deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen content was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased films the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, particularly for biased films. Unbiased films were softer, which is attributed to the formation of silicon oxide and/or to a lower compressive stress level. (orig.)

  3. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  4. Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

    International Nuclear Information System (INIS)

    Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

    2006-01-01

    Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

  5. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    Brooks, J.N.; Ruzic, D.N.

    1990-01-01

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  6. Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Goto S.

    2015-06-01

    Full Text Available In sputtering deposition process of TiO2, metal Ti or sintered TiO2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO2 target was used, stoichiometric TiO2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm2. But, sintered TiO2 target is fragile and cannot endure higher density of input power than 3.4W/cm2. On the other hand, Ti target needs higher oxygen concentration (8% in sputtering gas atmosphere for obtaining rutile/anatase. Even though Ti target can be input twice power density of 7.9W/cm2, the highest deposition rate for Ti target was 1.4/nm, which was ~35% of the highest rate for TiO2 target. Then we have study out the composite target consisting of Ti plate and TiO2 chips. Using the composite target, stoichiometric TiO2 films were prepared in the rate of 9.6nm/min at 6.8 W/cm2 under the atmosphere of Ar/2.5%O2. Furthermore, we have found that the TiO2 films obtained from the composite target consisted of about 100% anatase, whereas TiO2 films obtained from other target have rutile dominant structure. The optical band gap energy of the film is determined by using the Tauc plot. The calculated band gap energies for the films deposited by Ti target and composite target were 2.95 and 3.24eV, which are equivalent to that of rutile and anatase structure, respectively.

  7. RF magnetron sputtered TiNiCu shape memory alloy thin film

    International Nuclear Information System (INIS)

    Fu Yongqing; Du Hejun

    2003-01-01

    Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

  8. Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

    International Nuclear Information System (INIS)

    Plagemann, A.; Ellmer, K.; Wiesemann, K.

    2007-01-01

    During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

  9. Titanium oxidation by rf inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2014-01-01

    The development of titanium dioxide (TiO 2 ) films in the rutile and anatase phases is reported. The films have been obtained from an implantation/diffusion and sputtering process of commercially pure titanium targets, carried out in up to 500 W plasmas. The experimental outcome is of particular interest, in the case of anatase, for atmospheric pollution degradation by photocatalysis and, as to the rutile phase, for the production of biomaterials required by prosthesis and implants. The reactor employed consists in a cylindrical pyrex-like glass vessel inductively coupled to a 13.56 MHz RF source. The process takes place at a 5×10 −2 mbar pressure with the target samples being biased from 0 to -3000 V DC. The anatase phase films were obtained from sputtering the titanium targets over glass and silicon electrically floated substrates placed 2 cm away from the target. The rutile phase was obtained by implantation/diffusion on targets at about 700 °C. The plasma was developed from a 4:1 argon/oxygen mixture for ∼5 hour processing periods. The target temperature was controlled by means of the bias voltage and the plasma source power. The obtained anatase phases did not require annealing after the plasma oxidation process. The characterization of the film samples was conducted by means of x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Raman spectroscopy

  10. Composite SiOx/hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO2 and polyimide

    Czech Academy of Sciences Publication Activity Database

    Drabik, M.; Kousal, J.; Pinosh, Y.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Boldyryeva, Hanna; Pešička, J.

    2007-01-01

    Roč. 81, č. 7 (2007), s. 920-927 ISSN 0042-207X Institutional research plan: CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering * polyimide * SiO2 Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.881, year: 2007

  11. Morphological analysis of TiB2 thin film prepared by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Dai Wei; Zhang Tongjun; Yang Junyou; Sun Rongxing; Xu Juliang

    2008-01-01

    Superhard TiB 2 thin films were deposited on steel substrates using the radio-frequency magnetron-sputtering technique with a low normalized substrate temperature (0.1 s /T m 2 thin films were overstoichiometric and that the diffusion of Ti and B atoms on the substrate surface was greatly improved at a temperature of 350 deg. C. Moreover, a new dense structure, named the ''equiaxed'' grain structure, was observed by FESEM at this substrate temperature. GIXRD was carried out at different directions with same the grazing-incidence method and the variation of diffraction intensity of the nonrandom textured grains was confirmed. Combined with FESEM and AES analysis, it is suggested that the equiaxed grain structure was located in zone 2 at the normalized substrate temperature as low as 0.18

  12. Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

    2010-07-15

    InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

    International Nuclear Information System (INIS)

    Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong

    2013-01-01

    The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O = 1:1:1:2.5–3.0), lower electrical conductivity (σ < 8 S/cm), higher refractive index (n = 1.9–2.0) and larger band gap (E g = 3.02–3.29 eV), and show less shift of Fermi level (△ E F ∼ 0.26 eV) and increased concentration of electrons (△ N e ∼ 10 4 ) in the conduction band with the reduction concentration of oxygen vacancy (V O ). Although a-IGZO has intensively been studied for a semiconductor channel material of thin film transistors in next-generation flat panel displays, its fundamental material parameters have not been thoroughly reported. In this work, the work function (φ) of a-IGZO films is tested with the ultraviolet photoelectron spectroscopy. It is found that the φ of a-IGZO films is in the range of 4.0–5.0 eV depending on the V O . - Highlights: ► Amorphous InGaZnO 4 (a-IGZO) films were prepared with different sputtering modes. ► Electrical and optical properties of the different films were compared. ► Fermi level (△E F ) shift in a-IGZO films were tested by X-ray photoelectron spectroscopy. ► The relation of △E F with the properties of a-IGZO films were discussed. ► Work function was tested by ultraviolet photoelectron spectroscopy

  14. Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

    Directory of Open Access Journals (Sweden)

    Cui Yan

    2014-01-01

    Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

  15. Exchange interaction in MnPt/FeCo sputtered multilayers

    International Nuclear Information System (INIS)

    Honda, S.; Nawate, M.; Norikane, T.

    2000-01-01

    MnPt single-layer films have been prepared on glass substrates by RF magnetron sputtering for studying the composition dependencies of resistivity and crystalline structure. In the as-deposited state, the resistivity increases with Mn content and reaches the maximum at 69 at%. By annealing, the resistivity of the films having the Mn content around 51 at% increases, closely relating to the growth of the ordered CuAu FCT-type MnPt crystals. For the both film structures of the glass/Cu/FeCo/MnPt/Cu and the glass/MnPt/FeCo/Cu, which have been sputter-deposited on glass substrates, the exchange interaction between MnPt and FeCo layers, and the coercivity of the FeCo layer have been examined as functions of the Mn content, the layer thickness and the annealing temperature. In the as-deposited state, the exchange field (H ex ) is nearly zero up to 75 at% of Mn content, above which the value of H ex increases and shows the maximum at 85 at%, in which the blocking temperature is about 100 deg. C. By annealing, the value of H ex increases for the films of Mn content around 40-60 at%, exhibiting the higher blocking temperature than 360 deg. C. The temperature stability has also been examined using the Rutherford backscattering spectrometry

  16. Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

    Directory of Open Access Journals (Sweden)

    Claudiu V. Falub

    2017-05-01

    Full Text Available Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8” Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100 nm thick magnetic layers and (2-20 nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ∼(7-120 Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency, while the coercivity was kept low, ∼(0.05-0.9 Oe. The alignment of the easy axis (EA on the 8” wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM, X-ray reflectivity (XRR with reciprocal space mapping (RSM and magneto-optical Kerr effect (MOKE measurements.

  17. Irreversible thermochromic response of RF sputtered nanocrystalline BaWO{sub 4} films for smart window applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, C.; Santhosh Kumar, T.; Pamu, D., E-mail: pamu@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati -781039 (India)

    2015-10-15

    We report irreversible thermochromic behaviour of BaWO{sub 4} (BWO) films for the first time. BWO films have been deposited at different substrate temperatures (RT, 200, 400, 600 and 800 °C) using RF magnetron sputtering in pure argon plasma. BWO films deposited at 800 °C exhibit crystalline nature. Also, BWO films deposited in the temperature range of 400 - 600 °C exhibit WO{sub 3} as a secondary phase and its weight percentage decreases with an increase in deposition temperature, whereas the films deposited at 800 °C exhibited pure tetragonal phase. FESEM images revealed that as the average particle sizes of the films are higher as compared with the thickness of the films and is explained based on Avrami type nucleation and growth. The transmittance of the films decreases with an increase in deposition temperature up to 600 °C and increases thereafter. Films deposited at 600 °C show ≤ 20% transmittance, looking at the films deposited at room temperature and 800 °C exhibits 90 and 70%, respectively. The refractive index and extinction coefficient of the films show profound dependence on crystallinity and packing density. The optical bandgap of BWO films increases significantly with an increase in O{sub 2}% during the deposition. The optical bandgap of the BWO films deposited at different temperatures in pure argon plasma, are in the range of 3.7 to 3.94 eV whereas the films deposited at 600 °C under different O{sub 2} plasma are in the range of 3.6 - 4.5 eV. The formations of colour centres are associated with the oxygen vacancies, which are clearly seen from the optical bandgap studies. The observed irreversible thermochromic behaviour in BWO films is attributed to the presence of oxygen vacancies that arises due to the electrons trapped at oxygen vacancies causing an inter valence charge transfer of W{sup 5+} to W{sup 6+} and is confirmed through the change in the optical density (ΔOD). Further, the Raman spectra are being used to

  18. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  19. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  20. Sputtered of ZnO:Al thin Films for Application in Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Sona Flickyngerova

    2008-01-01

    Full Text Available High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al, were prepared by radio –frequency (RF diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various technological steps during preparation. The ion bombardment and the substrate temperature modified theirstructure, surface morphology, electrical and optical parameters. In this work we present changes between samples preparedat room temperature (RT and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect ofion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.

  1. Visible light active Au:TiO2 nanocomposite photoanodes for water splitting: Sol-gel vs. sputtering

    International Nuclear Information System (INIS)

    Naseri, N.; Sangpour, P.; Moshfegh, A.Z.

    2011-01-01

    In this study, pure TiO 2 and Au:TiO 2 nanocomposite thin films are both synthesized using sol-gel and RF reactive co-sputtering methods. Physical and photoelectrochemical properties of the thin films deposited by each method are compared. The optical density spectra and scanning electron microscopy images of the Au:TiO 2 films reveal formation of gold nanoparticles in the all nanocomposite films synthesized by two methods. Moreover, the optical bandgap energy of the thin films decreases with addition of Au nanoparticles. X-ray photoelectron spectroscopy indicates that the presence of gold in metallic state and the formation of TiO 2 is stoichiometric. The photoelectrochemical properties of the TiO 2 and Au:TiO 2 thin films are characterized by using a compartment cell containing KOH solution as electrolyte. It is found that in the pure systems, TiO 2 sputtered films shows a higher photocurrent under visible light illumination while a reverse result is obtained for the Au:TiO 2 systems. In addition, photoirradiation on electrode/electrolyte (EE) and substrate/electrode (SE) interfaces for the sputtered samples reveals the EE illumination enhances the photoresponse of the layers as compared to SE case.

  2. Optical and structural properties of TiO{sub 2}/Ti/Ag/TiO{sub 2} and TiO{sub 2}/ITO/Ag/ITO/TiO{sub 2} metal-dielectric multilayers by RF magnetron sputtering for display application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jang-Hoon; Lee, Seung-Hyu; Hwangbo, Chang-Kwon [Inha University, Incheon (Korea, Republic of); Lee, Kwang-Su [Quantum Photonic Science Research Center, Hanyang University, Seoul (Korea, Republic of)

    2004-03-15

    Electromagnetic-interference (EMI) shielding and near-infrared (NIR) cutoff filters for plasma display panels, based on fundamental structures (ITO/Ag/ITO), (TiO{sub 2}/Ti/Ag/TiO{sub 2}) and (TiO{sub 2}/ITO/Ag/ITO/TiO{sub 2}), were designed and prepared by RF-magnetron sputtering. The optical, structural and electrical properties of the filters were investigated by using spectrophotometry, Auger electron spectroscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy, atomic force microscopy and four-point-probe measurements. The results show that ITO films as the barriers and base layers lead to higher transmittance in the visible spectrum and smoother surface roughness than Ti metal barriers, while maintaining high NIR cutoff characteristics and chemical stability, which may be attributed to the lower absorption in the interfacial layers and better protection of the Ag layers by the ITO layers.

  3. Initial Growth Process of Magnetron Sputtering 321 Stainless Steel Films Observed by Afm

    Science.gov (United States)

    Jin, Yongzhong; Wu, Wei; Liu, Dongliang; Chen, Jian; Sun, Yali

    To investigate the initial morphological evolution of 321 stainless steel (SS) films, we examined the effect of sputtering time on the morphology of 321 SS film. In this study, a group of samples were prepared at nine different sputtering times within 20 s using radio-frequency (r.f.) magnetron sputtering and characterized by atomic force microscopy (AFM). Only globular-like grains were formed on mica substrates within 6 s, whose average grain size is ~ 21-44 nm. Meanwhile, few grains with larger size are subject to settle at the defect sites of mica substrates. At 8 s, we found large columnar crystallites with the average grain size of 61 nm. From 10 to 14 s, islands grew continuously and coalesced in order to form an interconnected structure containing irregular channels or grooves, with a depth of ~ 3.5-5 nm. Up to 16 s, a nearly continuous film was formed and some new globular-like grains were again present on the film. Study of the AFM image at 20 s suggests that the watercolor masking method designed by us is an effective method, by which we can prepare thin films with steps for the measurement of the thickness of continuous thin films. It is also found that the coverage rate of films increases with the increase in sputtering time (from 2 to 16 s). On the other hand, the increase in root mean square (RMS) roughness is much more significant from 6 to 10 s, and there is a maximum value, 2.81 nm at 10 s due to more islands during deposition. However, RMS roughness decreases with the decrease in length and width of channels or grooves from 10 to 16 s. Especially, a lower RMS roughness of 0.73 nm occurs at 16 s, because of the continuous film produced with a large coverage rate of 98.43%.

  4. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi

    1994-01-01

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  5. Modification of the surface properties of glass-ceramic materials at low-pressure RF plasma stream

    Science.gov (United States)

    Tovstopyat, Alexander; Gafarov, Ildar; Galeev, Vadim; Azarova, Valentina; Golyaeva, Anastasia

    2018-05-01

    The surface roughness has a huge effect on the mechanical, optical, and electronic properties of materials. In modern optical systems, the specifications for the surface accuracy and smoothness of substrates are becoming even more stringent. Commercially available pre-polished glass-ceramic substrates were treated with the radio frequency (RF) inductively coupled (13.56 MHz) low-pressure plasma to clean the surface of the samples and decrease the roughness. Optical emission spectroscopy was used to investigate the plasma stream parameters and phase-shifted interferometry to investigate the surface of the specimen. In this work, the dependence of RF inductively coupled plasma on macroscopic parameters was investigated with the focus on improving the surfaces. The ion energy, sputtering rate, and homogeneity were investigated. The improvements of the glass-ceramic surfaces from 2.6 to 2.2 Å root mean square by removing the "waste" after the previous operations had been achieved.

  6. EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

    Directory of Open Access Journals (Sweden)

    Khairul Aimi Yusof

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

  7. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  8. Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

    International Nuclear Information System (INIS)

    Tao, Lei; Li, Heqin; Shen, Jiong; Qiao, Kai; Wang, Wei; Zhou, Chu; Zhang, Jing; Tang, Qiong

    2015-01-01

    The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H 2 SO 4 solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film

  9. Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Lei [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Shen, Jiong [Earth-Panda Advance Magnetic Material Co., Ltd., Anhui Lujiang 231500 (China); Qiao, Kai; Wang, Wei; Zhou, Chu [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Anhui Hefei 230009 (China)

    2015-02-01

    The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H{sub 2}SO{sub 4} solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film.

  10. The statistics of sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1993-01-01

    The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

  11. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    Science.gov (United States)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  12. Formation and stability of sputtered clusters

    International Nuclear Information System (INIS)

    Andersen, H.H.

    1989-01-01

    Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

  13. On the Novel Biaxial Strain Relaxation Mechanism in Epitaxial Composition Graded La1−xSrxMnO3 Thin Film Synthesized by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Yishu Wang

    2015-11-01

    Full Text Available We report on a novel method to fabricate composition gradient, epitaxial La1−xSrxMnO3 thin films with the objective to alleviate biaxial film strain. In this work, epitaxial, composition gradient La1−xSrxMnO3, and pure LaMnO3 and La0.67Sr0.33MnO3 thin films were deposited by radio frequency (RF magnetron sputtering. The crystalline and epitaxy of all films were first studied by symmetric θ–2θ X-ray diffraction (XRD and low angle XRD experiments. Detailed microstructural characterization across the film thickness was conducted by high-resolution transmission electron microscopy and electron diffraction. Four compositional gradient domains were observed in the La1−xSrxMnO3 film ranging from LaMnO3 rich to La0.67Sr0.33MnO3 at the surface. A continuous reduction in the lattice parameter was observed accompanied by a significant reduction in the out-of-plane strain in the film. Fabrication of the composition gradient La1−xSrxMnO3 thin film was found to be a powerful method to relieve biaxial strain under critical thickness. Besides, the coexistence of domains with a composition variance is opening up various new possibilities of designing new nanoscale structures with unusual cross coupled properties.

  14. RF magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

    Directory of Open Access Journals (Sweden)

    K.A. Prosolov

    2017-09-01

    Full Text Available Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate, sintered at different mass % ratios. According to Raman scattering and X-ray diffraction data, the deposited hydroxyapatite coatings have a disordered structure. High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one. A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes. It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.

  15. Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

    International Nuclear Information System (INIS)

    Essafti, A.; Abouelaoualim, A.; Fierro, J.L.G.; Ech-chamikh, E.

    2009-01-01

    Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm 3 with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.

  16. Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

    Science.gov (United States)

    Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

    1999-01-01

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

  17. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  18. Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

    International Nuclear Information System (INIS)

    Qi, Q.; Zhang, W.Z.; Shi, L.Q.; Zhang, W.Y.; Zhang, W.; Zhang, B.

    2012-01-01

    Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated. - Highlights: ► Single-crystal films of TiC (111) have been synthesized by RF magnetron sputtering. ► Both temperature and bias affect greatly the TiC crystal structure. ► Al 2 O 3 substrate is much better than Si substrate for TiC epitaxial growth. ► TiC (111) epitaxial film can be grown on Al 2 O 3 (0001) at room temperature.

  19. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Z.L.

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  20. Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

    Science.gov (United States)

    Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

    2018-03-01

    In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

  1. TiCx thin films coatings prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Saoula, N.; Handa, K.; Kesri, R.

    2004-01-01

    demonstrate clearly the great influence of the variation of different parameters (deposition time, RF power, total pressure, gas mixture (Ar+CH 4 ) on the film growth rates and thickness. The aim of present work is to study their influence of gas mixture, more specifically of carbon content on the structure, composition and the hardness of TiC coatings, prepared using an RF sputtering system

  2. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-01-01

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets

  3. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Grazielle O. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Joanni, Ednan, E-mail: ednan.joanni@cti.gov.br [Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Jesus, Dosil P. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil)

    2015-08-30

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  4. Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

    International Nuclear Information System (INIS)

    Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

    2010-01-01

    Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

  5. In vitro behaviour of nanocrystalline silver-sputtered thin films

    International Nuclear Information System (INIS)

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  6. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  7. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

    1979-01-01

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

  8. Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

    International Nuclear Information System (INIS)

    Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

    2010-01-01

    Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

  9. Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications

    Science.gov (United States)

    Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Sasinková, V.; Boháček, P.; Arbet, J.

    2018-03-01

    N-doped carbon thin films were deposited on a silicon substrate and quartz glass by RF reactive magnetron sputtering using a carbon target and an Ar+N2 gas mixture. During the magnetron sputtering, the substrate holder temperatures was kept at 800 °C. The carbon film thickness on the silicon substrate was about 70 nm, while on the quartz glass it was in the range 15 nm – 60 nm. The elemental concentration in the films was determined by RBS and ERD. Raman spectroscopy was used to evaluate the intensity ratios I D/I G of the D and G peaks of the carbon films. The transmission photocathodes prepared were placed in the hollow-cathode assembly of a Pierce-structure DC gun to produce photoelectrons. The quantum efficiency (QE) was calculated from the laser energy and cathode charge measured. The properties of the transmission photocathodes based on semitransparent N-doped carbon thin films on quartz glass and their potential for application in DC gun technology are discussed.

  10. Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

    International Nuclear Information System (INIS)

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-01-01

    Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

  11. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  12. Composite SiOx/fluorocarbon plasma polymer films prepared by r.f. magnetron sputtering of SiO2 and PTFE

    Czech Academy of Sciences Publication Activity Database

    Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

    2006-01-01

    Roč. 81, 1-4 (2006), s. 38-44 ISSN 0042-207X R&D Projects: GA MŠk OC 527.10; GA MŠk ME 553 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

  13. Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cerqueira, M.F.; Alpuim, P. [Departamento de Fisica, Universidade do Minho, Braga (Portugal); Losurdo, M. [Plasma Chemistry Research Center, CNR, Bari (Italy); Monteiro, T.; Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Aveiro (Portugal); Stepikova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation)

    2007-06-15

    Erbium-doped low-dimensional Si films with different microstructures were deposited by reactive magnetron sputtering on glass substrates by varying the hydrogen flow rate during deposition. Amorphous, micro- and nanocrystalline samples, consisting of Si nanocrystalls embedded in silicon-based matrices with different structures, were achieved with optical properties in the visible and IR depending on nanocrystalline fraction and matrix structure and chemical composition. Structural characterization was performed by X-ray diffraction in the grazing incidence geometry and Raman spectroscopy. The chemical composition was studied using RBS/ERD techniques. Spectroscopic ellipsometry was combined with the previous techniques to further resolve the film microstructure and composition. In particular, the distribution along the film thickness of the volume fractions of nanocrystalline/amorphous silicon and SiO{sub x} phases has been obtained. In this contribution we discuss visible and infrared photoluminescence as a function of sample microstructure and of the oxygen/hydrogen concentration ratio present in the matrix. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  15. Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, Arindam; Basak, Durga, E-mail: sspdb@iacs.res.in

    2017-07-15

    Highlights: • Comparative study on Al, Al-Sn and Al-F doped ZnO films has been carried out. • High transparent Al-F co-doped film shows three times enhanced carrier density. • Al-F co-doped film shows larger carrier relaxation time. • Al-Sn co-doped films shows carrier transport dominated by impurity scattering. • Al-F co-doped ZnO film can be applied as transparent electrode. - Abstract: Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO{sub 2} clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 10{sup 20} cm{sup −3} due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

  16. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  17. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  18. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  19. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  20. Simulation experiments and solar wind sputtering

    International Nuclear Information System (INIS)

    Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

    1978-01-01

    In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

  1. Chemical and microstructural characterization of rf-sputtered BaTiO{sub 3} nano-capacitors with Ni electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Reck, James N., E-mail: j.n.reck@gmail.com [Missouri University of Science and Technology, Department of Materials Science and Engineering, Rolla, MO 65409 (United States); Cortez, Rebecca [Union College, Department of Mechanical Engineering, Schenectady, NY 12308 (United States); Xie, S. [Northwestern University, Department of Materials Science and Engineering, Evanston, IL 60208 (United States); Zhang Ming; O' Keefe, Matthew; Dogan, Fatih [Missouri University of Science and Technology, Department of Materials Science and Engineering, Rolla, MO 65409 (United States)

    2012-05-15

    Chemical and microstructural evaluation techniques have been used to characterize sputter deposited 100-150 nm thick BaTiO{sub 3} nano-capacitors with 30 nm thick Ni electrodes fabricated on Si/SiO{sub 2} wafers. More than 99% of devices had resistance > 20 M{Omega}. Electrodes were found to have a roughness, R{sub a}, of about 0.66 {+-} 0.04 nm, and the BaTiO{sub 3} had a R{sub a} value of 1.3 {+-} 0.12 nm. Characterization of the BaTiO{sub 3} film chemistry with X-ray Photoelectron Spectroscopy (XPS) showed the films had excess oxygen and Ba:Ti ratios ranging from 0.78 to 1.1, depending on sputtering conditions. X-ray diffraction showed a broad peak between approximately 20 Degree-Sign and 35 Degree-Sign 2{theta}, indicating the films were either amorphous or contained grain sizes less than 5 nm. Focused ion beam images confirmed the presence of smooth, conformal films, with no visible signs of macro-defects such as pin-holes, cracks, or pores. High resolution transmission electron microscopy (TEM) and electron diffraction patterns confirmed the presence of a nearly amorphous film with limited short range order. No correlation was found between the chemical and microstructural studies with the dielectric permittivity (280-1000), loss (0.02-0.09), and/or resistivity (8.7 Multiplication-Sign 10{sup 10}-1.5 Multiplication-Sign 10{sup 12} {Omega} cm) values.

  2. Time-Domain Simulation of RF Couplers

    International Nuclear Information System (INIS)

    Smithe, David; Carlsson, Johan; Austin, Travis

    2009-01-01

    We have developed a finite-difference time-domain (FDTD) fluid-like approach to integrated plasma-and-coupler simulation [1], and show how it can be used to model LH and ICRF couplers in the MST and larger tokamaks.[2] This approach permits very accurate 3-D representation of coupler geometry, and easily includes non-axi-symmetry in vessel wall, magnetic equilibrium, and plasma density. The plasma is integrated with the FDTD Maxwell solver in an implicit solve that steps over electron time-scales, and permits tenuous plasma in the coupler itself, without any need to distinguish or interface between different regions of vacuum and/or plasma. The FDTD algorithm is also generalized to incorporate a time-domain sheath potential [3] on metal structures within the simulation, to look for situations where the sheath potential might generate local sputtering opportunities. Benchmarking of the time-domain sheath algorithm has been reported in the references. Finally, the time-domain software [4] permits the use of particles, either as field diagnostic (test particles) or to self-consistently compute plasma current from the applied RF power.

  3. Niobium-based catalysts prepared by reactive radio-frequency magnetron sputtering and arc plasma methods as non-noble metal cathode catalysts for polymer electrolyte fuel cells

    International Nuclear Information System (INIS)

    Ohnishi, Ryohji; Katayama, Masao; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

    2010-01-01

    Two vacuum methods, reactive radio-frequency (RF) magnetron sputtering and arc plasma deposition, were used to prepare niobium-based catalysts for an oxygen reduction reaction (ORR) as non-noble metal cathodes for polymer electrode fuel cells (PEFCs). Thin films with various N and O contents, denoted as NbO x and Nb-O-N, were prepared on glassy carbon plates by RF magnetron sputtering with controlled partial pressures of oxygen and nitrogen. Electrochemical measurements indicated that the introduction of the nitrogen species into the thin film resulted in improved ORR activity compared to the oxide-only film. Using an arc plasma method, niobium was deposited on highly oriented pyrolytic graphite (HOPG) substrates, and the sub-nanoscale surface morphology of the deposited particles was investigated using scanning tunneling microscopy (STM). To prepare practical cathode catalysts, niobium was deposited on carbon black (CB) powders by arc plasma method. STM and transmission electron microscopy observations of samples on HOPG and CB indicated that the prepared catalysts were highly dispersed at the atomic level. The onset potential of oxygen reduction on Nb-O-N/CB was 0.86 V vs. a reversible hydrogen electrode, and the apparent current density was drastically improved by the introduction of nitrogen.

  4. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  5. Nb and Ta Co-Doped TiO2 Transparent Conductive Thin Films by Magnetron Sputtering: Fabrication, Structure, and Characteristics

    Science.gov (United States)

    Liu, Yang; Peng, Qian; Qiao, Yadong; Yang, Guang

    2018-06-01

    Nb and Ta co-doped anatase titanium dioxide (NTTO) nanocrystalline thin films were deposited on quartz and Si (100) substrates by RF magnetron sputtering. The influence of RF power on the growth, structure, morphology, and properties of the samples are discussed in detail. X-ray diffraction measurements show that the films are polycrystalline with anatase tetragonal structure, which is further confirmed by Raman spectroscopy analysis. Meanwhile, Raman spectroscopy results indicate that the peak width of E g(1) mode, which is directly correlated to the carrier density, changes obviously with RF power. It is found that the substitution of Nb5+ and Ta5+ at Ti site is significantly improved with the increase of RF power from 150 W to 210 W. For the sample deposited at 210 W, the optical transmittance is above 82% in the visible range and the electrical resistivity is as low as 1.3 × 10-3 Ω cm with carrier density of 1.1 × 1021 cm-3 and Hall mobility of 4.5 cm2 V-1 s-1. The optical and electrical properties of NTTO thin films can be compared to those of Nb or Ta doped anatase TiO2. However, co-doping with Nb and Ta gives a possible platform to complement the limitations of each individual dopant.

  6. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  7. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    Science.gov (United States)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  8. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie [Dublin City University, Glasnevin, Dublin 9 (Ireland); Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Gahan, David, E-mail: david.gahan@impedans.com; Scullin, Paul; Doyle, James; Lennon, Jj; Hopkins, M. B. [Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Vijayaraghavan, Rajani K.; Daniels, Stephen [Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2016-04-15

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  9. Influence of rf-magnetron Sputtered ITO and Al:ZnO on Photovoltaic Behaviour Related to CuInSe{sub 2}-Based Photovoltaic Solar Cells; Influencia del ITO y Al:ZnO, Fabricados mediante Pulverizacion Cataodica, sobre el Comportamiento Fotovoltaico de Dispositivos Basados en el CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M. A.; Guillen, C.; Dona, J. M.; Herrero, J.; Gutierrez, M. T. [Ciemat.Madrid (Spain)

    2000-07-01

    This paper describes several investigations, made in the CIEMAT, on the capability of depositing transparent conducting oxides at room temperature by rf-magnetron sputtering, and their application inCuInSe{sub 2}-based photovoltaic solar cells. ITO and Al:ZnO thin films having simultaneously high transmittance in the visible range and low resistivity, 10''3-10''4{omega}cm, can be obtained only if oxygen mass-flow rate is constrained to a very narrow range (0.5-1 sccm). Cell efficiency enhance when transparent conducting oxides are made without intentional heating and, after, the total devices are annealed in air at 200 degree centigree. (Author) 40 refs.

  10. The electronic structure of co-sputtered zinc indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  11. Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering

    Science.gov (United States)

    Wang, Chun; Kryder, Mark H.

    2009-09-01

    Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.

  12. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  13. High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

    Energy Technology Data Exchange (ETDEWEB)

    Garratt, E; Wickey, K J; Nandasiri, M I; Moore, A; AlFaify, S; Gao, X [Department of Physics, Western Michigan University, Kalamazoo, MI 49008 (United States); Smith, R J; Buchanan, T L; Priyantha, W; Kopczyk, M; Gannon, P E [Montana State University, Bozeman, MT, 59717 (United States); Kayani, A, E-mail: asghar.kayani@wmich.ed

    2009-11-01

    The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 {sup o}C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

  14. Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications

    Science.gov (United States)

    Bociaga, Dorota; Sobczyk-Guzenda, Anna; Szymanski, Witold; Jedrzejczak, Anna; Jastrzebska, Aleksandra; Olejnik, Anna; Jastrzebski, Krzysztof

    2017-09-01

    In this study silicon doped diamond-like carbon (Si-DLC) coatings were synthesized on two substrates: silicon and AISI 316LVM stainless steel using a multi-target DC-RF magnetron sputtering method. The Si content in the films ranged between 4 and 16 at.%, and was controlled by the electrical power applied in RF regime to Si cathode target. The character of the chemical bonds was revealed by FTIR analysis. With the addition of silicon the hydroxyl absorption (band in the range of 3200-3600 cm-1) increased what suggests more hydrophilic character of the coating. There were also observed significant changes in bonding of Si atoms. For low content of dopant, Si-O-Si bond system is predominant, while for the highest content of silicon there is an evidence of the shift to Si-C bonds in close proximity to methyl groups. The Raman spectroscopy revealed that the G peak position is shifted to a lower wavenumber and the ID/IG ratio decreased with increasing Si content, which indicates an increase in the C-sp3 content. Regardless of the coatings' composition, the improvement of hardness in comparison to pure substrate material (AISI 316 LVM) was observed. Although the reduction of the level of hardness from the level of 10.8 GPa for pure DLC to about 9.4 GPa for the silicon doped coatings was observed, the concomitant improvement of films adhesion with higher amount of Si was revealed. Although incorporation of the dopant to DLC coatings increases the number of E. coli cells which adhered to the examined surfaces, the microbial colonisation remains on the level of substrate material. The presented results prove the potential of Si-DLC coatings in biomedical applications from the point of view of their mechanical properties.

  15. Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

    2017-05-01

    As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

  16. Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

    Directory of Open Access Journals (Sweden)

    Zhuhao Gong

    2018-02-01

    Full Text Available A radio-frequency micro-electro-mechanical system (RF MEMS wafer-level packaging (WLP method using pre-patterned benzo-cyclo-butene (BCB polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to generate the housing cavity, the BCB sealing ring was protected by a sputtered Cr/Au (chromium/gold layer. The average measured thickness of the BCB layer was 5.9 μm. In contrast to the conventional methods of spin-coating BCB after fabricating cavities, the pre-patterned BCB method presented BCB bonding layers with better quality on severe topography surfaces in terms of increased uniformity of thickness and better surface flatness. The observation of the bonded layer showed that no void or gap formed on the protruding coplanar waveguide (CPW lines. A shear strength test was experimentally implemented as a function of the BCB widths in the range of 100–400 μm. The average shear strength of the packaged device was higher than 21.58 MPa. A RF MEMS switch was successfully packaged using this process with a negligible impact on the microwave characteristics and a significant improvement in the lifetime from below 10 million to over 1 billion. The measured insertion loss of the packaged RF MEMS switch was 0.779 dB and the insertion loss deterioration caused by the package structure was less than 0.2 dB at 30 GHz.

  17. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

    International Nuclear Information System (INIS)

    Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

    2016-01-01

    Highlights: • a-C:Ti nanocomposite coatings were prepared on 316L stainless steel by using R.F. magnetron sputtering method. • Properties of the nanocomposite coatings were analyzed with respect to titanium content. • Corrosion resistance, biocompatibility and hydrophobicity of nanocomposite coating were enhanced with increasing titanium content. • Coating with 2.33 at.% titanium showed superior tribological properties compared to other coatings. - Abstract: Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp"2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  18. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  19. Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

    Science.gov (United States)

    Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

    2014-09-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

  20. Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

    International Nuclear Information System (INIS)

    Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K

    2006-01-01

    Mg x Zn 1-x O (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ∼4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications

  1. Argonne inverted sputter source

    International Nuclear Information System (INIS)

    Yntema, J.L.; Billquist, P.J.

    1983-01-01

    The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

  2. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  3. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  4. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  5. Data compilation of angular distributions of sputtered atoms

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

    1990-01-01

    Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

  6. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    Science.gov (United States)

    Menon, Rashmi; Gupta, Vinay; Tan, H. H.; Sreenivas, K.; Jagadish, C.

    2011-03-01

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1 × 1011 to -2 × 108 dyne/cm2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  7. Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

    International Nuclear Information System (INIS)

    Qian, H X; Zeng, X R; Zhou, W

    2010-01-01

    Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

  8. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-01-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  9. Chemical sputtering of graphite by H+ ions

    International Nuclear Information System (INIS)

    Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

    1976-01-01

    In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

  10. CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media

    Science.gov (United States)

    Szívós, János; Pothorszky, Szilárd; Soltys, Jan; Serényi, Miklós; An, Hongyu; Gao, Tenghua; Deák, András; Shi, Ji; Sáfrán, György

    2018-03-01

    CoPt thin films as possible candidates for Bit Patterned magnetic Media (BPM) were prepared and investigated by electron microscopy techniques and magnetic measurements. The structure and morphology of the Direct Current (DC) sputtered films with N incorporation were revealed in both as-prepared and annealed state. Nanopatterning of the samples was carried out by means of Radio Frequency (RF) plasma etching through a Langmuir-Blodgett film of silica nanospheres that is a fast and high throughput technique. As a result, the samples with hexagonally arranged 100 nm size separated dots of fct-phase CoPt were obtained. The influence of the order of nanopatterning and anneling on the nanostructure formation was revealed. The magnetic properties of the nanopatterned fct CoPt films were investigated by Vibrating Sample Magnetometer (VSM) and Magnetic Force Microscopy (MFM). The results show that CoPt thin film nanopatterned by means of the RF plasma etching technique is promising candidate to a possible realization of BPM. Furthermore, this technique is versatile and suitable for scaling up to technological and industrial applications.

  11. Fluence-dependent sputtering yield of micro-architectured materials

    Energy Technology Data Exchange (ETDEWEB)

    Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

    2017-06-15

    Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

  12. Computer simulation of sputtering: A review

    International Nuclear Information System (INIS)

    Robinson, M.T.; Hou, M.

    1992-08-01

    In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

  13. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  14. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  15. Sputtering on cobalt with noble gas ions

    International Nuclear Information System (INIS)

    Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

    1983-01-01

    Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

  16. Sequential Ar-O2 sputtering of Y2O3, BaF2, and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O2 annealing

    International Nuclear Information System (INIS)

    Bhushan, M.; Strauss, A.J.; Finn, M.C.

    1989-01-01

    Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O 2 annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y 2 O 3 , BaF 2 , and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O 2 at about 800 degree C or above before the superconducting YBCO phase can be formed by annealing in dry O 2 . However, sputtering in an Ar-O 2 ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O 2 only. If the ambient contains about 20% O 2 , films with T c (R=0)>85 K can be prepared without wet-O 2 annealing. The Ar-O 2 process therefore has the potential for in situ preparation of superconducting YBCO films

  17. Multiple-target method for sputtering amorphous films for bubble-domain devices

    International Nuclear Information System (INIS)

    Burilla, C.T.; Bekebrede, W.R.; Smith, A.B.

    1976-01-01

    Previously, sputtered amorphous metal alloys for bubble applications have ordinarily been prepared by standard sputtering techniques using a single target electrode. The deposition of these alloys is reported using a multiple target rf technique in which a separate target is used for each element contained in the alloy. One of the main advantages of this multiple-target approach is that the film composition can be easily changed by simply varying the voltages applied to the elemental targets. In the apparatus, the centers of the targets are positioned on a 15 cm-radius circle. The platform holding the film substrate is on a 15 cm-long arm which can rotate about the center, thus bringing the sample successively under each target. The platform rotation rate is adjustable from 0 to 190 rpm. That this latter speed is sufficient to homogenize the alloys produced is demonstrated by measurements made of the uniaxial anisotropy constant in Gd 0 . 12 Co 0 . 59 Cu 0 . 29 films. The anisotropy is 6.0 x 10 5 ergs/cm 3 and independent of rotation rate above approximately 25 rpm, but it drops rapidly for slower rotation rates, reaching 1.8 x 10 5 ergs/cm 3 for 7 rpm. The film quality is equal to that of films made by conventional methods. Coercivities of a few oersteds in samples with stripe widths of 1 to 2 μm and magnetizations of 800 to 2800 G were observed

  18. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  19. Design and Calibration of an RF Actuator for Low-Level RF Systems

    Science.gov (United States)

    Geng, Zheqiao; Hong, Bo

    2016-02-01

    X-ray free electron laser (FEL) machines like the Linac Coherent Light Source (LCLS) at SLAC require high-quality electron beams to generate X-ray lasers for various experiments. Digital low-level RF (LLRF) systems are widely used to control the high-power RF klystrons to provide a highly stable RF field in accelerator structures for beam acceleration. Feedback and feedforward controllers are implemented in LLRF systems to stabilize or adjust the phase and amplitude of the RF field. To achieve the RF stability and the accuracy of the phase and amplitude adjustment, low-noise and highly linear RF actuators are required. Aiming for the upgrade of the S-band Linac at SLAC, an RF actuator is designed with an I/Qmodulator driven by two digital-to-analog converters (DAC) for the digital LLRF systems. A direct upconversion scheme is selected for RF actuation, and an on-line calibration algorithm is developed to compensate the RF reference leakage and the imbalance errors in the I/Q modulator, which may cause significant phase and amplitude actuation errors. This paper presents the requirements on the RF actuator, the design of the hardware, the calibration algorithm, and the implementation in firmware and software and the test results at LCLS.

  20. Graphene synthesis from graphite/Ni composite films grown by sputtering

    International Nuclear Information System (INIS)

    Shin, Dong Hee; Yang, Seung Bum; Shin, Dong Yeol; Kim, Chang Oh; Kim, Sung; Choi, Suk Ho; Paek, Sang Hyon

    2012-01-01

    Graphite/Ni composite films have been deposited on SiO 2 /Si (100) wafers by varying their graphite concentration (n G ) and thickness (t) from 2 to 12 wt% and 40 to 400 nm, respectively, in a RF sputtering system, subsequently annealed at 900 .deg. C for 4 min, and then slowly cooled to room temperature to form graphene layers on Ni surfaces. Several structural-analysis techniques reveal the optimum nG (∼8 wt%) and t (∼160 nm) of the composite films for the synthesis of fewest-layer, defect-minimized graphene. At the annealing temperature, carbon atoms diffuse out from the composite film, followed by their precipitation as graphene on the Ni layer as the carbon solubility limit in Ni is reached during the cooling period. Based on this mechanism, the optimum conditions are explained. Our approach provides an advantage in that the number of layers can be simply tuned by varying n G and t of the composite films.

  1. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.

    Science.gov (United States)

    Cai, Wensi; Ma, Xiaochen; Zhang, Jiawei; Song, Aimin

    2017-04-20

    Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO₂ have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm² at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 10⁵. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices.

  2. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  3. Physical sputtering of metallic systems by charged-particle impact

    International Nuclear Information System (INIS)

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

  4. Sputtering properties of tungsten 'fuzzy' surfaces

    International Nuclear Information System (INIS)

    Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

    2011-01-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

  5. Excimer laser processing of inkjet-printed and sputter-deposited transparent conducting SnO2:Sb for flexible electronics

    International Nuclear Information System (INIS)

    Cranton, Wayne M.; Wilson, Sharron L.; Ranson, Robert; Koutsogeorgis, Demosthenes C.; Chi Kuangnan; Hedgley, Richard; Scott, John; Lipiec, Stephen; Spiller, Andrew; Speakman, Stuart

    2007-01-01

    The feasibility of low-temperature fabrication of transparent electrode elements from thin films of antimony-doped tin oxide (SnO 2 :Sb, ATO) has been investigated via inkjet printing, rf magnetron sputtering and post-deposition excimer laser processing. Laser processing of thin films on both glass and plastic substrates was performed using a Lambda Physik 305i excimer laser, with fluences in the range 20-100 mJ cm -2 reducing sheet resistance from as-deposited values by up to 3 orders of magnitude. This is consistent with TEM analysis of the films that shows a densification of the upper 200 nm of laser-processed regions

  6. RF transport

    International Nuclear Information System (INIS)

    Choroba, Stefan

    2013-01-01

    This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

  7. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  8. Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

    International Nuclear Information System (INIS)

    Siddheswaran, R.; Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan; Životský, Ondřej; Novák, Petr; Šutta, Pavol

    2014-01-01

    Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O 2 gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature

  9. Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices

    Science.gov (United States)

    Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-11-01

    The systematic study of the oxygen partial pressure (OPP) and total chamber gas pressure (TGP) effects on the stoichiometry and crystal structure of rf sputtered Ba0.45Sr0.55TiO3 (BST) films and their phase purity allowed identifying close to optimal sputtering parameters for BST single phase polycrystalline film. The film with a Ba/Sr ratio equal to that of the source target and (Ba + Sr)/Ti ratio close to unity demonstrated the enhanced permittivity value of 553 and tunability of 69%. It was confirmed that the increase of TGP enables better match of the film and target stoichiometry. However, using O2/Ar ratio as a parameter should be utilized cautiously since exceeding a threshold OPP (2 mTorr in our case) may facilitate secondary phase formation. Relatively large dielectric losses were observed in both films sputtered at high (30 mTorr) and low (5 mTor) TGPs. The presence of oxygen vacancies was identified as a probable cause of losses, which is indirectly confirmed by the deviation of the film lattice constant from that of the bulk target.

  10. Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

    Science.gov (United States)

    Loch, D. A. L.; Aranda Gonzalvo, Y.; Ehiasarian, A. P.

    2017-06-01

    Inductively coupled impulse sputtering (ICIS) is a new development in the field of highly ionised pulsed PVD processes. For ICIS the plasma is generated by an internal inductive coil, replacing the need for a magnetron. To understand the plasma properties, measurements of the current and voltage waveforms at the cathode were conducted. The ion energy distribution functions (IEDFs) were measured by energy resolved MS and plasma chemistry was analysed by OES and then compared to a model. The target was operated in pulsed DC mode and the coil was energised by pulsed RF power, with a duty cycle of 7.5%. At a constant pressure (14 Pa) the set peak RF power was varied from 1000-4000 W. The DC voltage to the target was kept constant at 1900 V. OES measurements have shown a monotonic increase in intensity with increasing power. Excitation and ionisation processes were single step for ICIS of Ti and Ni and multi-step for Cu. The latter exhibited an unexpectedly steep rise in ionisation efficiency with power. The IEDFs measured by MS show the material- and time-dependant plasma potential in the range of 10-30 eV, ideal for increased surface mobility without inducing lattice defects. A lower intensity peak, of high energetic ions, is visible at 170 eV during the pulse.

  11. Formation of large clusters during sputtering of silver

    International Nuclear Information System (INIS)

    Staudt, C.; Heinrich, R.; Wucher, A.

    2000-01-01

    We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

  12. Sputtering calculations with the discrete ordinated method

    International Nuclear Information System (INIS)

    Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

    1977-01-01

    The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

  13. Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

    International Nuclear Information System (INIS)

    Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

    2008-01-01

    Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

  14. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Zhu Lin

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

  15. Radio frequency plasma excitation

    International Nuclear Information System (INIS)

    Burden, M.St.J.; Cross, K.B.

    1979-01-01

    An investigation into the use of rf sputtering for ion cleaning of insulating substrates before ion plating is reported. Initial experiments consisted of sputtering metals with rf power followed by the deposition of copper onto glass slides using rf plasma excitation and biasing supply. It was found that good quality films were obtained by rf ion plating onto plastics with excellent adhesion over a wide operating pressure range. A block schematic of the rf plasma excitation system is shown. (UK)

  16. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Gartner, M.; Stroescu, H. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Marin, A., E-mail: alexmarin@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Stoica, M.; Nicolescu, M.; Duta, M.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Aperathitis, E.; Pantazis, A.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2014-09-15

    Highlights: • Graded optical model for ITON films is presented. • ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient. • The lowest resistivity was 2 × 10{sup −3} Ω cm for films deposited in 75%N{sub 2} and RTA at 500 °C. • Films deposited in 75% N{sub 2} and RTA at 500 °C have degenerate semiconductor behavior. • Chemical composition before and after RTA has been analyzed by XPS depth profiling. - Abstract: The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In{sub 2}O{sub 3}–20% SnO{sub 2}) target in a mixture of Ar and N{sub 2} plasma (75% N{sub 2}–25% Ar and 100% N{sub 2} respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N{sub 2} ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV–vis–NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N{sub 2} and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

  17. Sputtering induced surface composition changes in copper-palladium alloys

    International Nuclear Information System (INIS)

    Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

    1981-01-01

    It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

  18. Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications

    Science.gov (United States)

    Rezaie, Mahdiyar Nouri; Manavizadeh, Negin; Abadi, Ehsan Mohammadi Nasr; Nadimi, Ebrahim; Boroumand, Farhad Akbari

    2017-01-01

    Hybrid inorganic/organic light-emitting diodes have attracted much attention in the field of luminescent electronics due to the desired incorporation of high optoelectronic features of inorganic materials with the processability and variety of organic polymers. To generate and emit a near ultraviolet (N-UV) ray, wide band gap semiconductors can be applied in the organic light-emitting diodes (OLEDs). In this paper, zinc oxide (ZnO) and aluminum-doped ZnO (AZO) thin films are deposited by radio frequency (RF) sputtering above the ITO electrode and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer is utilized as a complementary p-type semiconductor in OLED structure. The impact of ZnO and AZO thickness on the structural, electrical, optical and morphological properties of ITO/AZO and ITO/ZnO bilayers are scrutinized and compared. Results show that with the enlargement of both ZnO and AZO film thickness, the physical properties are gradually improved resulting in the better quality of transparent conducting thin film. The average electrical resistivity of 8.4 × 10-4 and 1.1 × 10-3 Ω-cm, average sheet resistance of 32.9 and 42.3 Ω/sq, average transmittance of 88.3 and 87.3% and average FOM of 1.0 × 104 and 7.4 × 103 (Ω-cm)-1 are obtained for ITO/AZO and ITO/ZnO bilayers, respectively. Moreover, comparing the results indicates that the strain and the stress within the ITO/AZO bilayer are decreased nearly 19% with respect to ITO/ZnO bilayer which yield higher quality of crystal. Consequently, the physical properties of ITO/AZO bilayer is found to be superior regarding ITO/ZnO bilayer. For fabricated UV-OLEDs, the turn-on voltages, the characteristic energy (Et) and the total concentration of traps (Nt) for the devices with the structures of ITO/ZnO/MEH-PPV/Al and ITO/AZO/MEH-PPV/Al are obtained 12 and 14 V, 0.108 and 0.191 eV, 9.33 × 1016 and 5.22 × 1016 cm-3, respectively. Furthermore, according to the electroluminescence

  19. Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

    International Nuclear Information System (INIS)

    Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao

    2017-01-01

    We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

  20. Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao, E-mail: dxiang@sjtu.edu.cn

    2017-03-21

    We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.