WorldWideScience

Sample records for rf sputter deposition

  1. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  2. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  3. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  5. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  6. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

    2006-01-01

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

  7. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  8. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  9. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  10. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  11. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  12. Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, O; Hanus, J; Choukourov, A; Kousal, J; SlavInska, D; Biederman, H, E-mail: ondrej.kylian@gmail.co [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Prague 8, 180 00 (Czech Republic)

    2009-07-21

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH{sub 2}/C value of 18% was observed in the N{sub 2}/H{sub 2} discharge, which leads to the surface exhibiting a high rate of protein adsorption. (fast track communication)

  13. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  14. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  15. Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Sea-Fue Wang

    2014-01-01

    Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

  16. Influence of R.F. sputter parameters on the magnetic orientation of Co-Cr layers

    NARCIS (Netherlands)

    Lodder, J.C.; Wielinga, T.

    1984-01-01

    Co-Cr layers for the perpendicular recording mode were deposited by means of RF-sputtering. The most important sputter parameters, i.e. the RF sputter high voltage VRF, the argon pressure Par and the substrate holder temperature Tsh, gave an optimum value for perpendicular orientation of the

  17. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  18. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  19. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  20. Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

    International Nuclear Information System (INIS)

    Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

    1996-01-01

    Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

  1. Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Labitzke, R.; Adolphi, B.; Jastrabík, Lubomír; Adámek, Petr; Drahokoupil, Jan; Hubička, Zdeněk; Kiselev, D.A.; Kholkin, A. L.; Gerlach, G.; Dejneka, Alexandr

    2011-01-01

    Roč. 205, č. 2 (2011), S241-S244 ISSN 0257-8972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed DC reactive sputtering * RF reactive sputtering * complex oxide film deposition * polymer substrate Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  2. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  3. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  4. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  5. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Science.gov (United States)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  6. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  7. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    Science.gov (United States)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  8. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  9. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  10. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  11. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  12. Preparation and Characterization of FC Films Coated on PET Substrates by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Huang Mei-lin

    2018-01-01

    Full Text Available Fluorocarbon (FC films were prepared on polyethylene terephthalate (PET plates and PET fabrics respectively by a radiofrequency (RF magnetron sputtering technique using polytetrafluoroethylene (PTFE as a target. Scanning electron microscope and X-ray photoelectron spectroscopy were used to investigate the morphology, structure and composition of the obtained FC films. The hydrophobicity and uvioresistant properties of the FC film coated fabric were studied. The results show that the FC films were successfully deposited on the PET substrates by a RF magnetron sputtering. The deposited films are made up of four components -CF3, -CF2-, CF- and -C-. The proportions of the four components and surface morphologies of the deposited films vary with the sputtering conditions. Compared with the original fabric samples, the hydrophobicity of the FC film coated fabrics is quite good and improved significantly.

  13. Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

    International Nuclear Information System (INIS)

    Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

    1992-01-01

    This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

  14. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  15. Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

    2016-12-15

    Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

  16. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  17. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  18. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  19. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

    International Nuclear Information System (INIS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

    2016-01-01

    Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

  20. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  1. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    International Nuclear Information System (INIS)

    Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

    2012-01-01

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  2. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

    2012-01-31

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  3. Morphology, optical and electrical properties of Cu-Ni nanoparticles in a-C:H prepared by co-deposition of RF-sputtering and RF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Ghodselahi, T., E-mail: ghodselahi@ipm.ir [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Vesaghi, M.A. [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran (Iran, Islamic Republic of); Gelali, A.; Zahrabi, H.; Solaymani, S. [Young Researchers Club, Islamic Azad University, Kermanshah Branch, Kermanshah (Iran, Islamic Republic of)

    2011-11-01

    We report optical and electrical properties of Cu-Ni nanoparticles in hydrogenated amorphous carbon (Cu-Ni NPs - a-C:H) with different surface morphology. Ni NPs with layer thicknesses of 5, 10 and 15 nm over Cu NPs - a-C:H were prepared by co-deposition of RF-sputtering and RF-Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) from acetylene gas and Cu and Ni targets. A nonmetal-metal transition was observed as the thickness of Ni over layer increases. The surface morphology of the sample was described by a two dimensional (2D) Gaussian self-affine fractal, except the sample with 10 nm thickness of Ni over layer, which is in the nonmetal-metal transition region. X-ray diffraction profile indicates that Cu NPs and Ni NPs with fcc crystalline structure are formed in these films. Localized Surface Plasmon Resonance (LSPR) peak of Cu NPs is observed around 600 nm in visible spectra, which is widen and shifted to lower wavelengths as the thickness of Ni over layer increases. The variation of LSPR peak width correlates with conductivity variation of these bilayers. We assign both effects to surface electron delocalization of Cu NPs.

  4. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  5. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  6. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  7. Copper deposition on fabrics by rf plasma sputtering for medical applications

    International Nuclear Information System (INIS)

    Segura, G; Guzmán, P; Barrantes, Y; Navarro, G; Asenjo, J; Guadamuz, S; Vargas, VI; Zuñiga, P; Chaves, S; Chaves, J

    2015-01-01

    The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10 −2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms. (paper)

  8. Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

    2017-02-15

    Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

  9. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  10. Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tomoya, E-mail: tomoya@ecei.tohoku.ac.jp; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-04-30

    Vanadium (V) doped ZnO (VZO) thin films were deposited on flexible polymer and quartz substrates by RF magnetron sputtering, and influences of deposition parameters of V concentration, RF power and growth temperature on resistivity, transmittance and crystallinity were investigated. For the polymer substrates, both a high heat-resistant polycarbonate (PC) film and a functional-layer-coated PC film were adopted. The resistivity decreased gradually but the transmittance was worsened with increasing V concentration. Low RF power and high growth temperature improved both transparency and conductivity. By over-coating of the functional layers, c-axis orientation was deteriorated while low-resistivity and high-transmittance characteristics were achieved. Resistivity and average visible-transmittance (wavelength = 450–800 nm) of VZO films on untreated PC and over-coated PC substrates were 0.98 mΩ cm and 83.7%, and 1.2 mΩ cm and 80.3%, respectively, at V concentration of 2 at.%, RF power of 100 W and growth temperature of 175 °C. VZO films on the polymer substrates had slightly high resistivity but nearly the same optical transmittance, compared to those on quartz, under the identical deposition parameters. These results indicate that good electrical and optical properties can be achieved for the VZO films on PC substrate. - Highlights: • V-doped ZnO (VZO) was deposited on polymer substrate. • Effects of V concentration, RF power and growth temperature were investigated. • Resistivity decreased gradually with increasing V concentration. • Low RF power was suitable to obtain low resistivity and high transmittance. • High growth temperature improved both transparency and conductivity.

  11. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  12. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  13. Substrate dependent hierarchical structures of RF sputtered ZnS films

    Science.gov (United States)

    Chalana, S. R.; Mahadevan Pillai, V. P.

    2018-05-01

    RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

  14. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  15. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  16. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  17. Bioactivity and Surface Reactivity of RF-sputtered Calcium Phosphate Thin Films

    NARCIS (Netherlands)

    Wal, Edwin van der

    2003-01-01

    Calcium phosphates (CaP) are known to be bioactive, i.e. able to bond to bone. This makes CaPs very suitable to be aplied as thin coatings on bone-implants. In this work we studied the physicochemical behaviour of CaP coatings applied with radio frequency (RF) magnetron sputtering, a deposition

  18. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  19. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  20. RF sputtering deposited a-IGZO films for LCD alignment layer application

    International Nuclear Information System (INIS)

    Wu, G.M.; Liu, C.Y.; Sahoo, A.K.

    2015-01-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  1. RF sputtering deposited a-IGZO films for LCD alignment layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Liu, C.Y.; Sahoo, A.K.

    2015-11-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  2. ZnO:Al thin films deposited by RF-magnetron sputtering with tunable and uniform properties.

    Science.gov (United States)

    Miorin, E; Montagner, F; Battiston, S; Fiameni, S; Fabrizio, M

    2011-03-01

    Nanostructured, high quality and large area Al-doped ZnO (ZnO:Al) thin films were obtained by radiofrequency (RF) magnetron sputtering. The sample rotation during deposition has resulted in excellent spatial distribution of thickness and electro-optical properties compared to that obtained under static conditions. ZnO:Al thin films are employed in a large number of devices, including thin film solar cells, where the uniformity of the properties is a key factor for a possible up-scaling of the research results to industrially relevant substrate sizes. A chemical post etching treatment was employed achieving tunable surface nanotextures to generate light scattering at the desired wavelength for improved cell efficiency. Since the film resistivity is only slightly increased by the etching, this post-deposition step allows separating the optimization of electro-optical properties from light scattering behavior. The thin films were characterized by FE-SEM, XRD, UV-VIS spectroscopy, four probe and van der Paw techniques.

  3. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  4. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  5. Some magnetic and magnetoresistive properties of RF-sputtered thin NiFe-Si films.

    Science.gov (United States)

    Vatskicheva, M.; Vatskichev, Ly.; Dimitrov, I.; Kunev, B.

    The galvanomagnetic properties and some structural peculiarities of rf-sputtered alloy films (NI80Fe20)100-xSix at 0 < x < 30 at. % were studied and compared with the corresponding properties of evaporated films of the same thickness and composition. The content of silicon increased with the increasing of the velocity of deposition and led to the amorphousation of the films. Coercivity decreased with the velocity of growth but it did not depend on the thickness and on the velocity of film deposition. The magnetoresistance ratio Dr/r of the sputtered films was about three times higher then that of the evaporated films.

  6. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  7. RF sputtered HgCdTe films for tandem cell applications

    International Nuclear Information System (INIS)

    Wang, S.L.; Lee, S.H.; Gupta, A.; Compaan, A.D.

    2004-01-01

    Polycrystalline Hg 1-x Cd x Te films were investigated for their potential as bottom cells of a CdTe-based tandem solar cell. The films were deposited by RF sputtering from a cold pressed target containing 30% HgTe+70% CdTe. The as-deposited films were highly resistive with (111) preferred orientation and a bandgap of ∝1.0 eV. Various thermal treatment schemes were investigated under different conditions of ambient and temperature to reduce the resistivity. The film properties were analyzed using infrared transmission spectra, energy dispersive X-ray spectra and X-ray diffraction. N doped p-HgCdTe films were also prepared by reactive sputtering in a N 2 /Ar ambient. P-n junction solar cells were fabricated with CdS films as the heterojunction partner. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  9. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    International Nuclear Information System (INIS)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L.

    2003-01-01

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

  10. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  11. Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

    2016-09-05

    N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  12. Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

    CERN Document Server

    Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

    1999-01-01

    Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

  13. Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hsu Cheng-Shing; Huang Cheng-Liang

    2001-01-01

    Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

  14. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  15. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  16. Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

    2010-09-15

    Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

  17. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  18. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  19. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  20. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  1. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  2. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  3. Fabrication and properties of yttrium doped barium titanate film by RF sputtering

    International Nuclear Information System (INIS)

    Igarashi, H.; Yuasa, M.; Okazaki, K.

    1985-01-01

    Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

  4. Plasma polymer films rf sputtered from PTFE under various argon pressures

    Czech Academy of Sciences Publication Activity Database

    Stelmashuk, Vitaliy; Biederman, H.; Slavinská, D.; Zemek, Josef; Trchová, Miroslava

    2005-01-01

    Roč. 77, č. 2 (2005), s. 131-137 ISSN 0042-207X R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) OC 527.90 Grant - others:EUREKAΣ2080(XE) OE57 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20430508 Keywords : RF sputtering * PTFE * fluorcarbon plasma polymers * thin film * teflon * deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.909, year: 2005

  5. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R. [Advanced Materials Research Centre (AMREC), SIRIM Berhad, Lot 34, Jalan Hi- Tech 2/3, Kulim Hi-Tech Park, 09000 Kulim (Malaysia)

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  6. Structural and superconducting properties of sputter-deposited niobium films for applications in RF accelerating cavities

    CERN Document Server

    Peck, M A

    2000-01-01

    The present work presents the results of a systematic study of superconducting and structural properties of niobium films sputter deposited onto the inner walls of radiofrequency copper resonators. The measured superconducting quantities include the surface resistance, the critical temperature, the penetration depth and the upper and lower critical fields. In addition to films grown with different discharge gases (Xe, Kr, Ar, Ne and Ar-Ne mixtures) and to films grown on substrates prepared under different conditions, the study also includes massive niobium cavities. The surface resistance is analysed in terms of its dependence on the temperature and on the rf field amplitude and, when possible, compared to theoretical predictions. In general, good agreement with BCS theory is observed. All experimental results are presented in the form of a simple, but adequate parameterisation. The residual resistance is observed to be essentially uncorrelated with the other variables, but strongly dependent on the macroscop...

  7. Growth and characterization of high quality ZnS thin films by RF sputtering

    Science.gov (United States)

    Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

    2012-06-01

    High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

  8. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  9. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  10. Fabrication and characterization of implantable and flexible nerve cuff electrodes with Pt, Ir and IrOx films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Lee, Soo Hyun; Jung, Jung Hwan; Chae, Youn Mee; Kang, Ji Yoon; Suh, Jun-Kyo Francis

    2010-01-01

    This paper presents the fabrication and characterization of implantable and flexible nerve cuff electrodes for neural interfaces using the conventional BioMEMS technique. In order to fabricate a flexible nerve electrode, polyimide (PI) was chosen as the substrate material. Then, nerve electrodes were thermally re-formed in a cuff shape so as to increase the area in which the charges were transferred to the nerve. Platinum (Pt), iridium (Ir) and iridium oxide (IrO x ) films, which were to serve as conducting materials for the nerve electrodes, were deposited at different working pressures by RF magnetron sputtering. The electrochemical properties of the deposited films were characterized by electrochemical impedance spectroscopy (EIS). The charge delivery capacities of the films were recorded and calculated by cyclic voltammetry (CV). The deposited films of Pt, Ir and IrO x have strong differences in electrochemical properties, which depend on the working pressure of sputter. Each film deposited at 30 mTorr of working pressure shows the highest value of charge delivery capacity (CDC). For the IrO x films, the electrochemical properties were strongly affected by the working pressure as well as the Ar:O 2 gas ratio. The IrO x film deposited with an Ar:O 2 gas ratio of 8:1 showed the highest CDC of 59.5 mC cm −2 , which was about five times higher than that of films deposited with a 1:1 gas ratio.

  11. The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

    Directory of Open Access Journals (Sweden)

    Accarat Chaoumead

    2012-01-01

    Full Text Available Transparent conductive titanium-doped indium oxide (ITiO films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4  Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4  Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

  12. Optimal series-parallel connection method of dye-sensitized solar cell for Pt thin film deposition using a radio frequency sputter system

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Young; Hong, Ji-Tae; Seo, Hyunwoong; Kim, Mijeong; Son, Min-Kyu; Lee, Kyoung-Jun [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Lee, Dong-Yoon [Advanced Materials and Application research Laboratory, Korea Electrotechnology Research Institute, 28-1, Seongju-dong, Changwon-city, Kyongnam, 641-120 (Korea, Republic of); Kim, Hee-Je [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)], E-mail: heeje@pusan.ac.kr

    2008-11-28

    The counter electrode widely used in DSC (Dye-sensitized solar cells) is constructed of a conducting glass substrate coated with a Pt film, in which the platinum acts as a catalyst. The characteristics of the platinum electrode depend strongly on the fabrication process and the electrode's surface condition. In this study, Pt counter electrodes were deposited by radio frequency (RF) sputtering with 6.7 x 10{sup -1} Pa Ar, RF power of 120 W and substrate temperature of 100 deg. C . The surface morphology of Pt electrodes was investigated using field emission scanning electron microscopy and atomic force microscopy. Comparison of samples prepared by RF sputtering and RF magnetron sputtering showed that the surface of the RF sputter deposited electrode had a larger surface area resulting in more effective catalytic characteristics. Finally, an open voltage of 4.8 V, a short circuit current of 569 mA and a photoelectric conversion efficiency of approximately 3.6% were achieved for cells composed of 30 DSC units of 6 cm x 4 cm DSC units with 6 cells in series and 5 cells in parallel.

  13. Sputter deposition system for controlled fabrication of multilayers

    International Nuclear Information System (INIS)

    Di Nardo, R.P.; Takacs, P.Z.; Majkrzak, C.F.; Stefan, P.M.

    1985-06-01

    A detailed description of a sputter deposition system constructed specifically for the fabrication of x-ray and neutron multilayer monochromators and supermirrors is given. One of the principal design criteria is to maintain precise control of film thickness and uniformity over large substrate areas. Regulation of critical system parameters is fully automated so that response to feedback control information is rapid and complicated layer thickness sequences can be deposited accurately and efficiently. The use of either dc or rf magnetron sources makes it possible to satisfy the diverse material requirements of both x-ray and neutron optics

  14. Comparison of Cu(In, Ga)Se{sub 2} thin films deposited on different preferred oriented Mo back contact by RF sputtering from a quaternary target

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Jing [Sichuan University, College of Materials Science and Engineering, Chengdu (China); Solar Energy Research Institute, Yunnan Normal University, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Kunming (China); Peng, Lianqin; Chen, Jinwei; Wang, Gang; Wang, Xueqin; Kang, Hong; Wang, Ruilin [Sichuan University, College of Materials Science and Engineering, Chengdu (China)

    2014-09-15

    The Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on bare glass and DC sputtered preferential oriented Mo-coated glass by RF sputtering from a single quaternary target. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD), Raman spectroscope, energy dispersive X-ray spectrometer (EDS) and atomic force microscope (AFM). Preferred orientation of the Mo back contact was tuned between (110) and (211) plane by controlling the thickness. All the deposited CIGS thin films show (112) preferred oriented chalcopyrite structures. The films prepared on Mo-coated glass show higher quality crystallinity, better stoichiometry composition and more smooth surface morphology. Especially, the film on (211) oriented Mo-coated glass with the best integrated performance is expected to be a candidate absorber for high-efficiency CIGS solar cell device. (orig.)

  15. Shape memory characteristics of sputter-deposited Ti-Ni thin films

    International Nuclear Information System (INIS)

    Miyazaki, Shuichi; Ishida, Akira.

    1994-01-01

    Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering apparatus. The as-sputtered films were heat-treated in order to crystallize and memorize. After the heat treatment, the shape memory characteristics have been investigated using DSC and thermomechanical tests. Upon cooling the thin films, the solution-treated films showed a single peak in the DSC curve indicating a single stage transformation occurring from B2 to the martensitic phase, while the age-treated films showed double peaks indicating a two-stage transformation, i.e., from B2 to the R-phase, then to the martensitic phase. A perfect shape memory effect was achieved in these sputter-deposited Ti-Ni thin films in association both with the R-phase and martensitic transformations. Transformation temperatures increased linearly with increasing applied stress. The transformation strain also increased with increasing stress. The shape memory characteristics were strongly affected by heat-treatment conditions. (author)

  16. Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kwangseok; Han, Seungwoo; Park, Kyoungwan; Sok, Junghyun

    2006-01-01

    In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 .deg. C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O 2 or N 2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O 2 atmosphere turned out to be much larger than that of the post-annealed films in a N 2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O 2 content and the top electrode improve the electroresistance.

  17. Optimal conditions for the deposition of novel anticorrosive coatings by RF magnetron sputtering for aluminum alloy AA6082

    International Nuclear Information System (INIS)

    Brachetti-Sibaja, S.B.; Domínguez-Crespo, M.A.; Rodil, S.E.; Torres-Huerta, A.M.

    2014-01-01

    Highlights: • Non-conventional technique for improving the corrosion resistance of aluminum alloys. • Effect of the deposition parameters: power, substrate temperature and deposition time. • Changes in the crystallinity of the coatings are observed with the temperature. • The structure of these coatings is found to be dependent on the nature of the substrate. • La coatings can provide a better physical barrier to inhibit the corrosion attack. - Abstract: Cerium and lanthanum coatings were deposited on glass, silicon (1 0 0), and aluminum alloy by RF magnetron sputtering in which several experimental conditions such as power, substrate temperature, and deposition time were varied, using pure CeO 2 and La 2 O 3 targets. The effect of deposition parameters on the bonding structure, surface morphology and properties against corrosion of rare earth (RE) coatings formed on metallic substrate was reported. The microstructure and chemistry of the thin film were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS); whereas their use as corrosion resistant coatings was studied in aqueous NaCl solution (3.0 wt%) by using polarization curves. Variations in these properties were observed by increasing the substrate temperature which modifies the crystallinity of the rare earth coatings. XRD and XPS findings indicate that the cerium coatings are composed by CeO 2 and a significant quantity of Ce 2 O 3 due to oxygen deficiency in the sputtering chamber, whereas La 2 O 3 /La(OH) 3 and some La intermetallic compounds are detected in the lanthanum films. Variations in the E corr and I corr were found as a function of the thickness, texture, and morphology of the as-prepared coatings

  18. Thin films preparation of the Ti-Al-O system by rf-sputtering

    International Nuclear Information System (INIS)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J.; Manaud, J. P.; Lahaye, M.; Munoz S, J.

    2010-01-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti 3 Al targets in a sputtering chamber with an Ar-O 2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  19. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  20. Influence of RF power on the properties of sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-07-15

    Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-01-01

    Full Text Available The ceramic target of Indium tinoxide (ITO (90% In2O3-10%SnO2 has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD, field emission scanning electron microscope (FESEM, atomic force microscope (AFM, UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222 and (400 of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.

  2. Growth of polycrystalline Pr_2NiO_4_+_δ coating on alumina substrate by RF magnetron co-sputtering from composite targets

    International Nuclear Information System (INIS)

    Sediri, A.; Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B.; Del Campo, L.; Echegut, P.; Laffez, P.

    2016-01-01

    Polycrystalline Pr_2NiO_4_+_δ coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr_2NiO_4_+_δ phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm"-"1 showed an emissivity of ε ≈ 0.8. - Highlights: • Pr_2NiO_4_+_δ coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

  3. Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Sahoo, A.K.; Liu, C.Y.

    2015-12-01

    The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50 W, 60 W and 70 W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70 W power deposited a-IGZO film. It was 6° for the 60 W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25 ms and 2.96 ms, respectively. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment control cell. - Highlights: • Radio-frequency power of indium gallium zinc oxide film deposition was studied. • The oblique deposition technique was used to prepare the alignment layers. • The liquid crystal pretilt angle was about 13° using 70 W. • The corresponding liquid crystal cells exhibited fast response time at 4.21 ms. • The cells showed low threshold voltage of 1.78 V and excellent contrast ratio.

  4. Morphology and life-time investigations of dry-lubricating MoS2 films deposited by RF-sputtering

    International Nuclear Information System (INIS)

    Menoud, C.; Kocher, H.; Hinterman, H.E.

    1985-01-01

    Morphology and life-time investigations in vacuum, dry and humid air, of thin, dry-lubricating MoS 2 -films, deposited by rf-sputtering, are reported, using scanning electron microscopical analysis (SEM) and pin on disc friction measurements. Beyond a certain relative humidity the life-time decreases rapidly by about two orders of magnitude, and the coefficient of friction increases from 0.02 to 0.04 in vacuum to 0.20 to 0.30 in humid air. Considering these changes, the useful life-time of a coating was defined as the number of revolutions at a given radius till the coefficient of friction reaches a value of 0.4. Life-time studies were also conducted with Rhodium interlayers and other substrate and pin materials. With the above life-time criterion and the selected pin-on-disc test conditions, the life-time does not show any significant change within an MoS 2 thickness range of 0.2 to 1.5 μm. Finally the life-time distribution of 160 depositions as well as some preliminary results on torque measurements with MoS 2 coated precision roller bearings are presented. (author)

  5. Dispersive transport in hydrogenated a-Si prepared by rf sputtering

    International Nuclear Information System (INIS)

    Shirafuji, Junji; Kim, Gi-Il; Sawadsaringkarn, M.; Inuishi, Yoshio

    1981-01-01

    Time-of-flight measurement of photo-excited carriers has been carried out in hydrogenated a-Si deposited by rf sputtering method. Both electrons and holes show highly dispersive transport. The electron drift mobility near room temperature ranges from 5 x 10 -3 to 4 x 10 -5 cm 2 /V.s, much lower than that of GD samples, and the activation energy is about 0.3 eV. The value of the hole mobility is comparable with that in GD specimens, but its activation energy is about 0.2 eV which is about half of that observed in GD a-Si. (author)

  6. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  7. RF magnetron sputtered La3+-modified PZT thin films: Perovskite phase stabilization and properties

    International Nuclear Information System (INIS)

    Singh, Ravindra; Goel, T.C.; Chandra, Sudhir

    2008-01-01

    In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films in pure perovskite phase by RF magnetron sputtering. Various deposition parameters such as target-to-substrate spacing, sputtering gas composition, deposition temperature, post-deposition annealing temperature and time have been optimized to obtain PLZT films in pure perovskite phase. The films prepared in pure argon at 100 W RF power without external substrate heating exhibit pure perovskite phase after rapid thermal annealing (RTA) at 700 deg. C for 5 min. The film prepared at 225 deg. C substrate temperature also exhibits pure perovskite phase after RTA at 700 deg. C for 2 min. SIMS depth profile performed on one of the pure perovskite films (RTA at 700 deg. C for 5 min) shows very good stoichiometric uniformity of all elements of PLZT. The surface morphology of the films was examined using SEM and AFM. The dielectric, ferroelectric and electrical properties of the pure perovskite films were also investigated in detail. The remanent polarization for the films annealed at 700 deg. C for 5 and 2 min were found to be 15 and 13.5 μC cm -2 , respectively. Both the films have high DC resistivity of the order of 10 11 Ω cm at the electric field of ∼80 kV cm -1

  8. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering

    CERN Document Server

    Nose, M; Zhou, M; Mae, T; Meshii, M

    2002-01-01

    ZrN and ZrSiN films were prepared in an rf sputtering apparatus that has a pair of targets facing each other (referred to as the facing target--type rf sputtering). Films were deposited on silicon wafers without bias application or substrate heating in order to examine only the effect of silicon addition to the transition metal nitride films. The contents of zirconium, nitrogen, and silicon of the films were determined with an electron probe microanalyzer. The transmission electron microscopy studies were carried out in addition to x-ray diffraction. For the high resolution transmission electron microscopy observation, the field emission type transmission electron microscope was used, which provides a point-to-point resolution of 0.1 nm. The samples were observed both parallel and perpendicular to the film surface, which were plane and cross sectional views, respectively. In order to investigate the relationship between the mechanical properties and microstructure of films, the hardness was measured by a nano...

  10. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Jahodova, Vera; Ding, Xing-zhao; Seng, Debbie H.L.; Gulbinski, W.; Louda, P.

    2013-01-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power

  11. Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

    2005-01-01

    Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

  12. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  13. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  14. Growth of polycrystalline Pr{sub 2}NiO{sub 4+δ} coating on alumina substrate by RF magnetron co-sputtering from composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Sediri, A., E-mail: amal.sediri@univ-tours.fr [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France); Del Campo, L.; Echegut, P. [CNRS, UPR 3079 CEMHTI, 45071 Orléans Cedex 2 (France); Laffez, P. [Université François-Rabelais de Tours, GREMAN UMR 7347 CNRS, IUT de Blois 15 rue de la chocolaterie CS 2903, 41029 Blois Cedex (France)

    2016-02-01

    Polycrystalline Pr{sub 2}NiO{sub 4+δ} coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr{sub 2}NiO{sub 4+δ} phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm{sup -1} showed an emissivity of ε ≈ 0.8. - Highlights: • Pr{sub 2}NiO{sub 4+δ} coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

  15. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Science.gov (United States)

    Surmeneva, Maria A.; Surmenev, Roman A.; Nikonova, Yulia A.; Selezneva, Irina I.; Ivanova, Anna A.; Putlyaev, Valery I.; Prymak, Oleg; Epple, Matthias

    2014-10-01

    A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  16. Urea impedimetric biosensor based on reactive RF magnetron sputtered zinc oxide nanoporous transducer

    International Nuclear Information System (INIS)

    Mozaffari, Sayed Ahmad; Rahmanian, Reza; Abedi, Mohammad; Amoli, Hossein Salar

    2014-01-01

    Graphical abstract: - Highlights: • Application and optimization of reactive RF magnetron sputtering for homogeneous nanoporous ZnO thin film formation. • Exploiting nanoporous ZnO thin film as a good porous framework with large surface area/volume for having stable immobilized enzyme with minimum loss of activity. • Application of impedimetric assessment for urea biosensing due to its rapidity, sensitivity, and repeatability. - Abstract: Uniform sputtered nanoporous zinc oxide (Nano-ZnO) thin film on the conductive fluorinated-tin oxide (FTO) layer was applied to immobilize urease enzyme (Urs) for urea detection. Highly uniform nanoporous ZnO thin film were obtained by reactive radio frequency (RF) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface morphology and roughness of ZnO thin film by field emission-scanning electron microscopy (FE-SEM) exhibits cavities of nanoporous film as an effective biosensing area for enzyme immobilization. Step by step monitoring of FTO/Nano-ZnO/Urs biosensor fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated FTO/Nano-ZnO/Urs biosensor was used for urea determination using EIS experiments. The impedimetric results show high sensitivity for urea detection within 0.83–23.24 mM and limit of detection as 0.40 mM

  17. Properties of RF sputtered zinc oxide based thin films made from different targets

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Instituto de Energias Renovables, Madrid (Spain)

    1994-01-01

    The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn, ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al{sub 2}O{sub 3} (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380{sup o}C with E{sub g}=3.25-3.35 eV and {rho}=4.8x10{sup -4} {Omega}cm. Reduction of substrate temperature at 200{sup o}C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al{sub 2}O{sub 3} targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1x10{sup -3} {Omega}cm respectively

  18. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    Science.gov (United States)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  19. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  20. Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

    International Nuclear Information System (INIS)

    Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

    2006-01-01

    Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

  1. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    International Nuclear Information System (INIS)

    Zapata-Navarro, A.; Marquez-Herrera, A.; Cruz-Jauregui, M.P.; Calzada, M.L.

    2005-01-01

    In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  3. Dependence of RF power on the content and configuration of hydrogen in amorphous hydrogenated silicon by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Ushita, K; Mogi, K; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Infrared absorption spectra at stretching bands of Si-H were investigated in hydrogenated amorphous silicon fabricated by reactive sputtering in the atmosphere of Ar and H/sub 2/ (10 mole%) at various input rf powers in the range from 0.8 to 3.8 W/cm/sup 2/. Hydrogen content mainly due to the configuration of Si=H/sub 2/ in the film increased with the decreasing rf power, as the deposition rate was decreased. On the other hand, the quantity of the monohydride (Si-H) configuration depended less on the power. Attachment of hydrogen molecules onto the fresh and reactive surface of silicon deposited successively was proposed for possible process of hydrogen incusion into amorphous silicon resulting in Si=H/sub 2/ configuration. The photoconductivity increased as the input power became higher, when the deposition rate also increased linearly with the power.

  4. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    International Nuclear Information System (INIS)

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  5. Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

    International Nuclear Information System (INIS)

    Porntheeraphat, S.; Nukeaw, J.

    2008-01-01

    The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

  6. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Science.gov (United States)

    Al-Mansoori, Muntaser; Al-Shaibani, Sahar; Al-Jaeedi, Ahlam; Lee, Jisung; Choi, Daniel; Hasoon, Falah S.

    2017-12-01

    Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  7. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Directory of Open Access Journals (Sweden)

    Muntaser Al-Mansoori

    2017-12-01

    Full Text Available Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2. The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF-sputtering system on the growth of intrinsic SnO2 (i-SnO2 layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  8. Influence of the Preparation Method, DC and RF Sputtering, on theProperties of Thin Film

    International Nuclear Information System (INIS)

    Tri-Mardji-Atmono; Widdi-Usada; Agus-Purwadi; Yunanto; Edi-Suharyadi

    2000-01-01

    The research on the influence of preparation method DC- and RF Sputteringon the properties of Fe-thin films has been done. The measurement with EDAXshows. that the Fe-content of RF-sputtered film increased with the increasingof self-bias voltage in the range of 850 - 1000 V. The observation ofmicrostructure using SEM shows a more homogeneity of thin film and smallergrain size with the increasing of the self-bias voltage. On the other hand,thin films with inhomogeneity of the structure were produced by DC-Sputteringprocess, indicated by the non continuity and the spread of theglow-discharge. Based on the investigation with X-ray diffraction, thin filmprepared by RF-Sputtering was amorphous, while the film produced by theDC-Sputtering is known as crystal structure. Preparation using DC-voltageshows continual sputtering-process at the voltage of 3000 V betweenelectrode. (author)

  9. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

    NARCIS (Netherlands)

    Yan, L.T.; Schropp, R.E.I.

    2011-01-01

    Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

  10. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  11. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zapata-Navarro, A.; Marquez-Herrera, A. [CICATA-IPN, Km. 14.5 Carretera Tampico-Puerto Ind. Altamira, Altamira Tamaulipas 89600 (Mexico); Cruz-Jauregui, M.P. [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada B.C. 22800 (Mexico); Calzada, M.L. [ICMM (CSIC) Madrid, Cantoblanco Madrid 28049 (Spain)

    2005-08-01

    In this work, we present the variation of the ferroelectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by RF co-sputtering with 0{<=}x{<=}1. The co-sputtering was done using a single magnetron with BaTiO{sub 3}/SrTiO{sub 3} targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

    2006-01-01

    The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

  13. Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

    2010-07-15

    InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  15. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  16. RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

    Science.gov (United States)

    Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

    2017-08-01

    A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

  17. Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss

    International Nuclear Information System (INIS)

    Xie Guofeng; Wang Dewu; Ying Chuntong

    2005-01-01

    One-dimensional ions extraction and collection using the RF resonance method is studied by PIC-MCC simulation. The energy and angle distribution of extracted ions is recorded and the sputtering loss is calculated. The results show that compared with parallel electrode method, RF resonance method has advantages such as shorter extraction time, lower collision loss and sputtering loss and higher collection ratio; the extraction time and collision loss are decreased with increasing extraction voltage, but the sputtering loss increases and collection ratio decreases; collision loss is decreased with increasing magnetic field, but the sputtering loss increases and collection ratio decreases. (authors)

  18. Electrical resistivity of sputtered molybdenum films

    International Nuclear Information System (INIS)

    Nagano, J.

    1980-01-01

    The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

  19. Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma

    International Nuclear Information System (INIS)

    Asanuma, T.; Matsutani, T.; Liu, C.; Mihara, T.; Kiuchi, M.

    2004-01-01

    Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in 'pure oxygen' plasma by reactive radio-frequency (rf) magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: (a) no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; (b) rutile (110) diffraction was observed at 4.0 Pa, (c) the dominant diffraction was from anatase (101) planes, with additional diffraction from (200), under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications

  20. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  1. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    International Nuclear Information System (INIS)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-01-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ∼165 deg. with a very low contact angle hysteresis of ∼3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  2. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Science.gov (United States)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-12-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon ®). Scanning electron microscopy images showed a " bird's nest"-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ˜165° with a very low contact angle hysteresis of ˜3°. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  3. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  4. Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

    Science.gov (United States)

    Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

    2017-01-01

    This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

  5. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  6. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Surmeneva, Maria A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Surmenev, Roman A., E-mail: rsurmenev@gmail.com [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB, 70569 Stuttgart (Germany); Nikonova, Yulia A.; Selezneva, Irina I. [Institute of Theoretical and Experimental Biophysics, Russian Academy of Sciences, Pushchino 142292 (Russian Federation); Ivanova, Anna A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Putlyaev, Valery I. [Department of Chemistry, Moscow State University, Vorobievi Gory, 1, Moscow 119991 (Russian Federation); Prymak, Oleg; Epple, Matthias [Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, 45117 Essen (Germany)

    2014-10-30

    Highlights: • Growth of a columnar grain structure perpendicular to the substrate surface was observed. • Interplanar spacing distances measured using HRTEM were 0.82 and 0.28 nm, corresponding to the (0 0 1) and (2 1 1) lattice planes of hexagonal HA. • Grain size and crystallinity increased when increasing the deposition time. • Nanometer-thick low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules. - Abstract: A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  7. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  8. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Energy Technology Data Exchange (ETDEWEB)

    Jafari, R., E-mail: rjafari@uqac.ca [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada); Menini, R.; Farzaneh, M. [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada)

    2010-12-15

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of {approx}165 deg. with a very low contact angle hysteresis of {approx}3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF{sub 3} and CF{sub 2} groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  9. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  10. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  11. RF magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

    Directory of Open Access Journals (Sweden)

    K.A. Prosolov

    2017-09-01

    Full Text Available Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate, sintered at different mass % ratios. According to Raman scattering and X-ray diffraction data, the deposited hydroxyapatite coatings have a disordered structure. High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one. A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes. It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.

  12. Structural evolution and growth mechanisms of RF-magnetron sputter-deposited hydroxyapatite thin films on the basis of unified principles

    Science.gov (United States)

    Ivanova, Anna A.; Surmeneva, Maria A.; Surmenev, Roman A.; Depla, Diederik

    2017-12-01

    The structural features of RF-magnetron sputter-deposited hydroxyapatite (HA) coatings are investigated in order to reveal the effect of the working gas composition and the sample position of the substrate relative to the target erosion zone. The film properties were observed to change as a result of bombardment with energetic ions. XRD analysis of the coated substrates indicates that with the increase of the ion-to-atom ratio, the fiber texture changes from a mixed (11 2 bar 2) + (0002) over (0002) orientation, finally reaching a (30 3 bar 0) out-of-plane orientation at high ion-to-atom ratios. TEM reveals that the microstructure of the HA coating consists of columnar grains and differs with the coating texture. The contribution of Ji/Ja to the development of microstructure and texture of the HA coating is schematically represented and discussed. The obtained results may contribute substantially to the progress of research into the development of HA coatings with tailored properties, and these coatings may be applied on the surfaces of metal implants used in bone surgery.

  13. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Ottsen, Tobias Sand; Stamate, Eugen

    2016-01-01

    -pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase......The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate...... over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility....

  14. Stability of sputter deposited ZnO:Cr films against acids

    International Nuclear Information System (INIS)

    Shinoda, Makoto; Nishide, Toshikazu; Sawada, Yutaka; Hosaka, Masato; Matsumoto, Toshihiko.

    1993-01-01

    ZnO:Cr films were deposited on water-cooled soda-lime glass substrates at room temperature in an Ar atmosphere by rf magnetron sputtering of a ZnO target on which Cr chips were placed. The films exhibited extraordinary stability against acids such as HCl or HNO 3 , and also high resistivities similar to those of ZnO films. The addition of Cr suppressed the growth of ZnO grains which resulted in the formation of a dense film with a smooth surface. The stability and high resistivity displayed by the ZnO:Cr films can be attributed to the formation of a chromium-oxide-rich grain boundary. (author)

  15. The Effect of Ar/O2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System

    Science.gov (United States)

    Ahn, Kwang-Soon; Nah, Yoon-Chae; Yum, Jun-Ho; Sung, Yung-Eun

    2002-02-01

    The effect of Ar:O2 ratio on the electrochromic properties and the response time of NiO grown by RF sputtering were investigated by in situ transmittance measurements with continuous potential cycling and pulse potential cycling. The transmittance difference, coloration efficiency, memory effect, and cycling stability were all found to be independent of the Ar:O2 ratio. However, the transmittance of the as-deposited NiO as well as the response time were significantly affected. This may be attributed to the excess of oxygen occupied interstitial sites in the sputtered NiO that could result in the generation of Ni3+ ions and interference with proton intercalation/deintercalation.

  16. SnO{sub 2}:F thin films deposited by RF magnetron sputtering: effect of the SnF{sub 2} amount in the target on the physical properties

    Energy Technology Data Exchange (ETDEWEB)

    De Moure F, F. [universidad Autonoma de Queretaro, Facultad de Quimica Materiales, Queretaro 76010, Queretaro (Mexico); Guillen C, A.; Nieto Z, K. E.; Quinones G, J. G.; Hernandez H, A.; Melendez L, M.; Olvera, M. de la L., E-mail: fcomoure@hotmail.com [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07360 Mexico D. F. (Mexico)

    2013-08-01

    SnO{sub 2}:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF{sub 2} as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500 C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO{sub 2} and Sn O. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO{sub 2} thin films grown with small SnF{sub 2} content in the target can be considered as candidates for transparent electrodes. (Author)

  17. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  18. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sin, N.D.M.; Rusop, M.

    2011-01-01

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  19. Influence of ferroelectric layer on artificial multiferroic LSMO/BTO bilayers deposited by Dc and RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ordonez, J. E.; Gomez, M. E.; Lopera, W. [Universidad del Valle, Department of Physics, A. A. 25360 Cali (Colombia)

    2016-11-01

    La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO)/BaTiO{sub 3} (BTO) bilayers were deposited on (001) SrTiO{sub 3} substrates via Dc and RF sputtering at pure oxygen atmosphere at a substrate temperature of 830 degrees Celsius. We studied the structural, electrical and magnetic properties on LSMO/BTO bilayers, when LSMO thickness is fixed at nm and BTO thickness is varied from 20 to 100 nm. Reciprocal Space Maps in LSMO show a strained growth for all samples, while BTO layers are always relaxed. Magnetization and electrical measurements indicate the influence of the ferroelectric layer, due to saturation magnetization increases from 500 to 590 emu/cm{sup 3} and coercive field decreases from 178 to 82 Oe with BTO thickness. Mean Field mechanism is identified on all samples with critical exponent β between 0.42 and 0.54. Resistivity measurements show electron-electron and magnon-magnon scattering conduction mechanisms. The influence on magnetic and electrical properties of bilayers with BTO thickness is attributed to crystallographic strains at the interface and the corresponding relaxation with increasing BTO layer thickness. The thickness of the individual layers were obtained by X-ray reflectivity measurements in the bilayers, not shown. X-ray diffraction and Reciprocal Space Maps measurements show highly textured layers with preferential growth in the c-axis direction. (Author)

  20. EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

    Directory of Open Access Journals (Sweden)

    Khairul Aimi Yusof

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

  1. Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

    Science.gov (United States)

    Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

    2009-03-01

    The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

  2. Preparation and characterization of thick metastable sputter deposits

    International Nuclear Information System (INIS)

    Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

    1975-01-01

    High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

  3. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  4. Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

    Directory of Open Access Journals (Sweden)

    Jang T.S.

    2016-01-01

    Full Text Available We report on the fabrication of Al-doped ZnO (AZO transparent-conductive oxide (TCO films on glass substrates by RF-sputtering, their physical properties, and the effect of thermal annealing on the AZO TCO films. The AZO films on glass substrates have a preferred orientation of the c-axis, irrespective of deposition conditions, which means that the AZO films have textured structures along the c-axis. The film thickness and surface roughness in the AZO films are proportional to plasma power and deposition time, while they are inverse-proportional to working gas ratio and working pressure. The AZO films have the optical transmittance over 80 % in the wavelength range of 400 – 1000 nm, irrespective of deposition conditions. The plasma power and the deposition time relatively give a large influence on the optical transmittance, compared to the working gas ratio and the working pressure. The AZO films deposited at room temperature have poor electrical properties, while the thermal annealing under Ar ambient significantly improves the electrical conductivity of the AZO films: an as-deposited sample has an electrical resistivity of 87 Wcm and an electron concentration of 1.3´1017 cm−3, while the annealed sample has an electrical resistivity of 3.7´10-2 Wcm and an electron concentration of 1.2´1020 cm−3.

  5. RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

    2009-01-01

    Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

  6. Influence of the deposition geometry on the microstructure of sputter-deposited V-Al-C-N coatings

    Energy Technology Data Exchange (ETDEWEB)

    Darma, Susan; Krause, Baerbel; Doyle, Stephen; Mangold, Stefan; Baumbach, Tilo [ISS, Karlsruher Institut fuer Technologie (Germany); Ulrich, Sven; Stueber, Michael [IAM-AWP, Karlsruher Institut fuer Technologie (Germany)

    2012-07-01

    Multi-element hard coating materials such as V-Al-C-N are of great interest for many technological applications. Their mechanical properties depend on the composition and microstructure of the coating. In order to determine the optimum composition and deposition conditions of these complex materials, many samples are required. One powerful tool for reducing the number of experiments is based on the so-called combinatorial approach for thin film deposition: many different thin film samples can be realized simultaneously, exploiting the deposition gradient resulting from codeposition of several materials. We will present an X-ray diffraction study of the influence of the deposition geometry on the microstructure of V-Al-C-N coatings. The films were deposited by reactive RF magnetron sputtering from a segmented target composed of AlN and VC. Synchrotron radiation measurements where performed at the beamline PDIFF at ANKA. Significant texture changes were observed which can be attributed to the deposition geometry, as verified by calculations of the flux distribution. We conclude that codeposition can accelerate significantly the screening of new materials, under the condition that the desired property is not significantly influenced by the microstructural changes due to the deposition geometry.

  7. Physical–chemical and biological behavior of an amorphous calcium phosphate thin film produced by RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Santos, Euler A. dos; Moldovan, Simona; Mateescu, Mihaela; Faerber, Jacques; Acosta, Manuel; Pelletier, Hervé; Anselme, Karine; Werckmann, Jacques

    2012-01-01

    This work evaluates the thermal reactivity and the biological reactivity of an amorphous calcium phosphate thin film produced by radio frequency (RF) magnetron sputtering onto titanium substrates. The analyses showed that the sputtering conditions used in this work led to the deposition of an amorphous calcium phosphate. The thermal treatment of this amorphous coating in the presence of H 2 O and CO 2 promoted the formation of a carbonated HA crystalline coating with the entrance of CO 3 2− ions into the hydroxyl HA lattice. When immersed in culture medium, the amorphous and carbonated coatings exhibited a remarkable instability. The presence of proteins increased the dissolution process, which was confirmed by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Moreover, the carbonated HA coating induced precipitation independently of the presence of proteins under dynamic conditions. Despite this surface instability, this reactive calcium phosphate significantly improved the cellular behavior. The cell proliferation was higher on the Ticp than on the calcium phosphate coatings, but the two coatings increased cellular spreading and stress fiber formation. In this sense, the presence of reactive calcium phosphate coatings can stimulate cellular behavior. - Highlights: ► Functionalization of Ti with reactive CaP thin film by RF-magnetron sputtering. ► De-hydroxylation facilitating the insertion of CO 3 2− into the HA lattice. ► High surface reactivity in the presence of culture medium. ► Cell behavior improved by the presence of reactive films.

  8. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil

    2016-01-01

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10"-1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10"-3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10"-4 Ω"-1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  9. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

    2016-06-15

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10{sup -}1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10{sup -}3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10{sup -}4 Ω{sup -}1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  10. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  11. Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

    International Nuclear Information System (INIS)

    Oh, Byeong-Yun; Park, Jae-Cheol; Lee, Young-Jun; Cha, Sang-Jun; Kim, Joo-Hyung; Kim, Kwang-Young; Kim, Tae-Won; Heo, Gi-Seok

    2011-01-01

    The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO 3 targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO 3 target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R s ) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: → The compositional dependence of co-sputtered WInZnO film properties is first investigated. → W cations work as oxygen binders in determining the electronic properties. → All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. → W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

  12. Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

    2015-11-01

    Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

  13. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  14. Optical, electrical, structural and microstructural characteristics of rf sputtered ITO films developed for art protection coatings

    International Nuclear Information System (INIS)

    Krasilnikova Sytchkova, A.; Grilli, M.L.; Piegari, A.; Boycheva, S.

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by rf sputtering in an Ar and Ar+O 2 gas mixture, both with and without additional substrate heating. The influence of both deposition conditions and post-annealing treatment on optical, electrical, structural and microstructural properties of the ITO films has been investigated. The optical constants have been calculated in the range 320-2500 nm using a combination of several theoretical models. A schematic diagram for the film properties change versus composition has been proposed in terms of a generalized parameter characterising the energy efficiency of the film formation. The deposition conditions and the optical and electrical properties of the films have been optimized with respect to the requirements for their application in art protection coatings. (orig.)

  15. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  16. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  17. Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

    International Nuclear Information System (INIS)

    Uehara, Keiichiro; Katayama, Kazunari; Date, Hiroyuki; Fukada, Satoshi

    2015-01-01

    Highlights: • H permeation tests for W layer formed by H plasma sputtering are performed. • H permeation flux through W layer is larger than that through W bulk. • H diffusivity in W layer is smaller than that in W bulk. • The equilibrium H concentration in W layer is larger than that in W bulk. - Abstract: It is important to evaluate the influence of deposition layers formed on plasma facing wall on tritium permeation and tritium retention in the vessel of a fusion reactor from a viewpoint of safety. In this work, tungsten deposition layers having different thickness and porosity were formed on circular nickel plates by hydrogen RF plasma sputtering. Hydrogen permeation experiment was carried out at the temperature range from 250 °C to 500 °C and at hydrogen pressure range from 1013 Pa to 101,300 Pa. The hydrogen permeation flux through the nickel plate with tungsten deposition layer was significantly smaller than that through a bare nickel plate. This indicates that a rate-controlling step in hydrogen permeation was not permeation through the nickel plate but permeation though the deposition layer. The pressure dependence on the permeation flux differed by temperature. Hydrogen permeation flux through tungsten deposition layer is larger than that through tungsten bulk. From analysis of the permeation curves, it was indicated that hydrogen diffusivity in tungsten deposition layer is smaller than that in tungsten bulk and the equilibrium hydrogen concentration in tungsten deposition layer is enormously larger than that in tungsten bulk at same hydrogen pressure.

  18. Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

    International Nuclear Information System (INIS)

    Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

    2008-01-01

    Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

  19. Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

    Science.gov (United States)

    Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

    2018-03-01

    In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

  20. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  1. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  2. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  3. Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-01-01

    Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

  4. Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-01-01

    The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

  5. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  6. The crystallization and properties of sputter deposited lithium niobite

    Energy Technology Data Exchange (ETDEWEB)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W., E-mail: alan.doolittle@ece.gatech.edu

    2016-06-30

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO{sub 2}) is performed by co-deposition from a lithium oxide (Li{sub 2}O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO{sub 2}. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO{sub 2} films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO{sub 2}) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material.

  7. The crystallization and properties of sputter deposited lithium niobite

    International Nuclear Information System (INIS)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W.

    2016-01-01

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO_2) is performed by co-deposition from a lithium oxide (Li_2O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO_2. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO_2 films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO_2) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material

  8. Microstructure and phase composition of sputter-deposited zirconia-yttria films

    International Nuclear Information System (INIS)

    Knoll, R.W.; Bradley, E.R.

    1983-11-01

    Thin ZrO 2 -Y 2 O 3 coatings ranging in composition from 3 to 15 mole % Y 2 O 3 were produced by rf sputter deposition. This composition range spanned the region on the equilibrium ZrO 2 -Y 2 O 3 phase diagram corresponding to partially stabilized zirconia (a mixture of tetragonal ZrO 2 and cubic solid solution). Microstructural characteristics and crystalline phase composition of as-deposited and heat treated films (1100 0 C and 1500 0 C) were determined by transmission electron microscopy (TEM) and by x-ray diffraction (XRD). Effects of substrate bias (0 approx. 250 volts), which induced ion bombardment of the film during growth, were also studied. The as-deposited ZrO 2 -Y 2 O 3 films were single phase over the composition range studied, and XRD data indicated considerable local atomic disorder in the lattice. Films produced at low bias contained intergranular voids, pronounced columnar growth, and porosity between columns. At high bias, the microstructure was denser, and films contained high compressive stress. After heat treatment, all deposits remained single phase, therefore a microstructure and precipitate distribution characteristic of toughened, partially stabilized zirconia appear to be difficult to achieve in vapor deposited zirconia coatings

  9. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  11. Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

    Science.gov (United States)

    Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

    2017-04-01

    High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

  12. Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

    Science.gov (United States)

    Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

    2018-05-01

    Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

  13. Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.

  14. Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

    International Nuclear Information System (INIS)

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-01-01

    Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

  15. Reactively sputtered TeOx optical recording media

    International Nuclear Information System (INIS)

    Di Giulio, M.; Manno, D.; Micocci, G.; Rella, R.; Rizzo, A.; Tepore, A.

    1987-01-01

    Telluriom suboxide (TeO x ) thin films have been obtained by R.F. reactive sputtering deposition by using a Te target and an Ar-O 2 gas mixture. This technique of preparation has been shown to be a valid method because it is possible to easily obtain films with desired characteristics by an appropriate selection of the deposition conditions. Different samples were prepared by changing both the R.F. power (80-300 Watt) and the oxygen concentration in the sputtering gas. The films were analyzed in order to study their optical characteristics and the morphology before and after heat treatment. In particular, transmissivity and reflectivity have been found to change markedly by thermal treatment and critical temperatures in the range 120-150 grades centigrade. This property makes these films suitable for optical recording with a low output power laser diode

  16. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Ming [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Kun, E-mail: kliu@mail.neu.edu.cn [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Xinghua [Hubei Aerospace Industry Technology Academe Special Vehicle Technology Center, Wuhan (China); Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China)

    2016-12-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  17. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-01-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  18. Surface characteristics of hydroxyapatite/titanium composite layer on the Ti-35Ta-xZr surface by RF and DC sputtering

    International Nuclear Information System (INIS)

    Kim, Won-Gi; Choe, Han-Cheol

    2011-01-01

    The purpose of this study was to investigate the surface characteristics of hydroxyapatite (HA)/titanium (Ti) composite layer on the Ti-35Ta-xZr alloy surface by radio frequency (RF) and direct current (DC) sputtering for dental application. The magnetron sputtered deposition for the HA was performed in the RF mode and for the Ti in the DC mode. Microstructures of the alloys were examined by optical microscopy (OM) and x-ray diffractometer (XRD). Surface characteristics of coated film was investigated by field-emission scanning electron microscope (FE-SEM) equipped with an energy dispersive x-ray spectrometer (EDS), and XRD. Microstructures of the Ti-35Ta-xZr alloys were changed from α'' phase to β phase, and changed from a needle-like structure to an equiaxed structure with increasing Zr content. From the results of polarization behavior in the Ti-35Ta-15Zr alloy, HA/Ti composite layer showed the good corrosion resistance compared to Ti single layer. The results of alternating current (AC) impedance test indicated that the presence of ha coating acted as a stable barrier in increasing the corrosion resistance.

  19. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  20. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  1. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-01-01

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets

  2. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Grazielle O. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Joanni, Ednan, E-mail: ednan.joanni@cti.gov.br [Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Jesus, Dosil P. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil)

    2015-08-30

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  3. Shape memory effect and microstructures of sputter-deposited Cu-Al-Ni films

    International Nuclear Information System (INIS)

    Minemura, T.; Andoh, H.; Kita, Y.; Ikuta, I.

    1985-01-01

    The shape memory effect has been found in many alloy systems which exhibit a thermoelastic martensite transformation. Cu-Al-Ni alloys exhibit an excellent shape memory effect in single crystalline states, but they have not yet been commercially used due to their brittle fracture along the grain boundaries in polycrystalline states. This letter reports the shape memory effect and microstructures of the sputter-deposited Cu-Al-Ni films. Cu-14%Al-4%Ni alloy ingot was prepared. A target for sputter deposition was cut from the ingot. Aluminium foils (20 μm thick) were used for the substrates of sputter deposition. The microstructures and crystal structures of the films were investigated by transmission electron microscopy (TEM) and X-ray diffraction using CuKα radiation, respectively. The effect of the sputtering conditions such as substrate temperature, partial pressure of argon gas, and the sputtering power on the structures of sputter-deposited Cu-14%Al-4%Ni films were investigated by X-ray diffraction. Results are shown and discussed. Photographs demonstrate shape memory behaviour of Cu-14%Al-4%Ni films sputter-deposited on aluminium foils from (a) liquid nitrogen temperature to (d) room temperature. (author)

  4. Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering

    International Nuclear Information System (INIS)

    Park, Woo Young; Ahn, Kun Ho; Hwang, Cheol Seong

    2003-01-01

    This study investigated the structural and electrical properties of (Ba,Sr)TiO 3 (BST) thin film capacitors with thicknesses ranging from 18 to 215 nm, which were prepared by on- and off-axis rf magnetron sputtering technique on Pt/SiO 2 /Si substrates. The deposition rate and cation composition ratios of the films were controlled to be the same regardless of the sputtering geometry. All the films show elongations in the out-of-plane lattice spacing, suggesting the presence of compressive stress with a smaller value by on-axis sputtering than by the off-axis system. There was no thickness dependence of the strain in the polycrystalline BST films. The BST films deposited using the on-axis system showed a higher bulk dielectric constant with a higher interfacial capacitance and a lower leakage current level than the films produced by the off-axis system. The strain effect was proposed to explain the correlations between the structural and electrical properties

  5. Electrical properties of resistive switches based on Ba1-χSrχTiO3 thin films prepared by RF co-sputtering

    International Nuclear Information System (INIS)

    Marquez H, A.; Hernandez R, E.; Zapata T, M.; Guillen R, J.; Cruz, M. P.; Calzadilla A, O.; Melendez L, M.

    2010-01-01

    In this work, was proposed the use of Ba 1-χ Sr χ TiO 3 (0≤x≤1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba 1-χ Sr χ TiO 3 thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO 3 and SrTiO 3 targets. The chemical composition (x parameter) in the deposited Ba 1-χ Sr χ TiO 3 thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba 1-χ Sr χ TiO 3 /nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba 1-χ Sr χ TiO 3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba 1-χ Sr χ TiO 3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO 3 lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  6. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  7. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  8. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

    International Nuclear Information System (INIS)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

    2016-01-01

    Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

  9. Electrochemical behaviour of titanium coated stainless steel by r.f. sputtering in synthetic sweat solutions for electrode applications

    International Nuclear Information System (INIS)

    Fonseca, C.; Vaz, F.; Barbosa, M.A.

    2004-01-01

    The r.f. sputtering technique was used to deposit titanium thin films on stainless steel substrates, aiming at the application of the coated samples as skin contact materials for 'dry' active electrodes. In this work the electrochemical behaviour of the coated samples was investigated in synthetic sweat solutions and their performance was compared with that of uncoated stainless steel and bulk titanium. The characterisation of the samples was carried out by electrochemical techniques and scanning electron microscopy. The coated samples displayed corrosion resistance values in synthetic sweat solutions much higher than stainless steel samples and of the same order of the values measured for bulk titanium in the same conditions

  10. Surface morphology, structural and electrical properties of RF ...

    Indian Academy of Sciences (India)

    5

    electrical properties of RF sputtered ITO thin films deposited onto Si(100). .... scanning electron microscopy (SEM) surface images are shown along with the cross- ..... annealing effect”, J. of Alloys and Compounds 509, (2011) 6072-6076.

  11. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    Science.gov (United States)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  12. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie [Dublin City University, Glasnevin, Dublin 9 (Ireland); Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Gahan, David, E-mail: david.gahan@impedans.com; Scullin, Paul; Doyle, James; Lennon, Jj; Hopkins, M. B. [Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Vijayaraghavan, Rajani K.; Daniels, Stephen [Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2016-04-15

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  13. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  14. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  15. Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

    Energy Technology Data Exchange (ETDEWEB)

    Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

    2015-07-15

    A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

  16. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  17. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

  18. Scaling of surface roughness in sputter-deposited ZnO:Al thin films

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Choi, Hong-Rak; Cho, Yong Soo

    2009-01-01

    We have studied surface roughness scaling of ZnO:Al thin films grown by rf magnetron sputtering of a compound target within framework of the dynamic scaling theory using atomic force microscopy. We have observed a crossover in scaling behavior of surface roughness at a deposition time of 25 min. Both the regimes are characterized by power-law dependence of local surface width w(r,t) on deposition time for small r, typical of anomalous scaling. The scaling exponents for the first regime indicate the existence of a new dynamics. For t≥25 min, the films follow super-rough scaling behavior with global exponents α=1.5±0.2 and β=1.03±0.01, and local exponents α local =1 and β local =0.67±0.05. The anomaly in the scaling behavior of the films is discussed in terms of the shadowing instability and bombardment of energetic particles during growth of the films.

  19. High power RF window deposition apparatus, method, and device

    Science.gov (United States)

    Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

    2017-07-04

    A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

  20. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

    International Nuclear Information System (INIS)

    Mahmodi, H; Hashim, M R

    2017-01-01

    In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

  1. Excimer laser processing of inkjet-printed and sputter-deposited transparent conducting SnO2:Sb for flexible electronics

    International Nuclear Information System (INIS)

    Cranton, Wayne M.; Wilson, Sharron L.; Ranson, Robert; Koutsogeorgis, Demosthenes C.; Chi Kuangnan; Hedgley, Richard; Scott, John; Lipiec, Stephen; Spiller, Andrew; Speakman, Stuart

    2007-01-01

    The feasibility of low-temperature fabrication of transparent electrode elements from thin films of antimony-doped tin oxide (SnO 2 :Sb, ATO) has been investigated via inkjet printing, rf magnetron sputtering and post-deposition excimer laser processing. Laser processing of thin films on both glass and plastic substrates was performed using a Lambda Physik 305i excimer laser, with fluences in the range 20-100 mJ cm -2 reducing sheet resistance from as-deposited values by up to 3 orders of magnitude. This is consistent with TEM analysis of the films that shows a densification of the upper 200 nm of laser-processed regions

  2. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  3. Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-03-15

    The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

  4. Influence of post-treatment on properties of Cu(In{sub ,}Ga)Se{sub 2} thin films deposited by RF magnetron sputtering using a quaternary single target for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sung Hee; Choi, Soon Ja; Chung, Chee Won, E-mail: cwchung@inha.ac

    2014-11-03

    The deposition of Cu(In,Ga)Se{sub 2} (CIGS) thin films has been performed by one-step RF sputtering using a single quaternary target and followed by sulfurization to incorporate S into CIGS films. The effect of sulfurization temperature and time on the properties of the films was studied. The sulfurized Cu(In,Ga)(Se,S){sub 2} (CIGSeS) films show that the chalcopyrite peaks shifted to high diffraction angles and the CuS and InS second phases could be formed at low sulfurization temperature. These indicate possible incorporation of S into the films. The formation and disappearance of these second phases depended on the sulfurization temperature and time. The band gap increased with increasing sulfurization temperature and time because of the shift of the absorption edge due to the increase of S/(S + Se) ratio. It was revealed that the resistivity of the as-deposited CIGS film increased after sulfurization while the carrier concentration and mobility decreased. It is believed that the sulfurization process of CIGS films can be utilized as a method to control the properties of the films. - Highlights: • Development of sputtering process of CIGS thin films using single quaternary target • Effect of sulfurization temperature and time on the properties of CIGS films • Application of sulfurization process to improve the properties of CIGS films • Successful transformation of CIGS films to chalcopyrite structure through post-sulfirization.

  5. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  6. Reactively sputtered TeO/sub x/ thin films for optical recording systems

    International Nuclear Information System (INIS)

    Di Giulio, M.; Micocci, G.; Rella, R.; Tepore, A.

    1988-01-01

    Tellurium suboxide (TeO/sub x/ ) thin films have been obtained by rf reactive sputtering deposition by using a Te target and an Ar--O 2 gas mixture. Different samples were prepared by changing both the rf power (80--200 W) and the oxygen concentration in the sputtering gas. The transmissivity and the reflectivity of these films change markedly by thermal treatment at critical temperatures in the range 120--150 0 C. This property makes these films suitable for optical disk recording with a low-output power laser diode

  7. RF Magnetron Sputtering Coating Of Hydroxyapatite On Alkali Solution Treated Titanate Nanorods

    Directory of Open Access Journals (Sweden)

    Lee K.

    2015-06-01

    Full Text Available Hydroxyapatite (HA is a material with outstanding biocompatibility. It is chemically similar to natural bone tissue, and has therefore been favored for use as a coating material for dental and orthopedic implants. In this study, RF magnetron sputtering was applied for HA coating. And Alkali treatment was performed in a 5 M NaOH solution at 60°C. The coated HA thin film was heat-treated at a range of temperatures from 300 to 600°C. The morphological characterization and crystal structures of the coated specimens were then obtained via FE-SEM, XRD, and FT-IR. The amorphous thin film obtained on hydrothermally treated nanorods transformed into a crystalline thin film after the heat treatment. The change in the phase transformation, with an enhanced crystallinity, showed a reduced wettability. The hydrothermally treated nanorods with an amorphous thin film, on the other hand, showed an outstanding wettability. The HA thin film perpendicularly coated the nanorods in the upper and inner parts via RF magnetron sputtering, and the FT-IR results confirmed that the molecular bonding of the coated film had an HA structure.

  8. Electrical properties of SrBi2Ta2O9 thin films deposited on Si (100) substrates by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Roy, A.; Jha, G.; Dhar, A.; Ray, S.K.; Manna, I.

    2008-01-01

    Recently, metal-ferroelectric-semiconductor (MFS) structures have attracted much attention because of its potentials as nonvolatile memory device with nondestructive readout operation. In the present study ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films are grown on p-type (100) Si substrates by rf magnetron sputtering method at different deposition conditions. The crystallinity of the films is studied using grazing incidence X-ray diffraction (GIXRD) pattern. The spectra show the film are polycrystalline with dominant orientation along (115) plane. The capacitance-voltage (C-V) characteristics of Al/SBT/Si capacitors were measured at 100 kHz. The (C-V) characteristic of AI/SBT/Si capacitor post-annealed at 700-800 deg C shows a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop is 0.88 V when the gate voltage is ± 5 V. The interface trap density (D it ) calculated by using Hills method at room temperature and a value in the order of 10 11 -10 12 eV -1 cm -2 was found at mid gap region depending on the crystallization temperature. The surface morphology was investigated by atomic force microscope (AFM). The study showed the potential of SBT for application in metal- ferroelectric-silicon nonvolatile memory devices. (author)

  9. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Science.gov (United States)

    Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

    2018-06-01

    This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

  10. Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    International Nuclear Information System (INIS)

    Giannetta, H.M.R.; Calaza, C.; Lamas, D.G.; Fonseca, L.; Fraigi, L.

    2015-01-01

    The present study investigates the main electrical transport mechanism in V 2 O 5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V 2 O 5 target and then oxidized at high temperature under air atmosphere to obtain the desired V 2 O 5 phase. The dependence of the electrical conductivity of the V 2 O 5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W H = 0.1682 eV, with a structural disorder energy W D = 0.2241 eV and an optical phonon frequency ν 0 = 0.468 × 10 13 s −1 . These results are in agreement with data reported in literature for single crystal V 2 O 5 . However, the carrier mobility μ = 1.5019 × 10 −5 cm 2 /Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V 2 O 5 thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V 2 O 5 films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping

  11. Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

    International Nuclear Information System (INIS)

    Galvez de la Puente, G.; Guerra Torres, J.A.; Erlenbach, O.; Steidl, M.; Weingaertner, R.; De Zela, F.; Winnacker, A.

    2010-01-01

    We produce amorphous silicon carbide thin films (a-SiC) by radio frequency (rf) magnetron sputtering from SiC bulk target. We present the emission pattern of the rf magnetron with SiC target as a function of process parameters, like target sample distance, rf power, sputtering rate and process gas pressure. The emission pattern is determined by means of thickness distribution of the deposited a-SiC films obtained from optical transmission measurements using a slightly improved method of Swanepoel concerning the determination of construction of the envelopes in the interference pattern of the transmission spectra. A calibration curve is presented which allows the conversion of integrated transmission to film thickness. Holding constant a set of process parameters and only varying the target sample distance the emission pattern of the rf magnetron with SiC target was determined, which allowed us to predict the deposition rate distribution for a wide range of process parameters and target geometry. In addition, we have found that the transmission spectra of the a-SiC films change with time and saturate after approximately 10 days. Within this process no change in thickness is involved, so that the determination of thickness using transmission data is justified.

  12. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    Science.gov (United States)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  13. Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

    CERN Document Server

    Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

    2002-01-01

    The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

  14. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  15. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  16. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  17. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

    Science.gov (United States)

    2012-01-01

    In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

  18. Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

    Science.gov (United States)

    Stark, C. R.; Diver, D. A.

    2018-04-01

    Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

  19. Synthesis of self-assembled Ge nano crystals employing reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez H, A. [Universidad Autonoma del Estado de Hidalgo, Escuela Superior de Apan, Calle Ejido de Chimalpa Tlalayote s/n, Col. Chimalpa, Apan, Hidalgo (Mexico); Hernandez H, L. A. [IPN, Escuela Superior de Fisica y Matematicas, San Pedro Zacatenco, 07730 Ciudad de Mexico (Mexico); Monroy, B. M.; Santana R, G. [UNAM, Instituto de Investigaciones en Materiales, Apdo. Postal 70-360, 04510 Ciudad de Mexico (Mexico); Santoyo S, J.; Gallardo H, S. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14740, 07300 Ciudad de Mexico (Mexico); Marquez H, A. [Universidad de Guanajuato, Campus Irapuato-Salamanca, Departamento de Ingenieria Agricola, Km. 9 Carretera Irapuato-Silao, 36500 Irapuato, Guanajuato (Mexico); Mani G, P. G.; Melendez L, M. [Universidad Autonoma de Ciudad Juarez, Instituto de Ingenieria y Tecnologia, Departamento de Fisica y Matematicas, 32310 Ciudad Juarez, Chihuahua (Mexico)

    2016-11-01

    This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nano crystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO{sub 2}/Ge/SiO{sub 2} by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO{sub 2} layer buy the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nano crystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps. The surface topography of SiO{sub 2} reference samples was carried out by atomic force microscopy. The crystallographic properties of the samples were studied by grazing incidence X-ray diffraction at 1.5 degrees carried out in a Siemens D-5000 system employing the Cu Kα wavelength. (Author)

  20. Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

    Science.gov (United States)

    Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

    2018-04-01

    Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

  1. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  2. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-04-15

    Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A

    2010-01-01

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  4. Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

    Science.gov (United States)

    Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

    2018-04-01

    Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

  5. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A [ENEA, Department of Physical Technologies and New Materials, SS7, Appia, km 706, 72100 Brindisi (Italy)

    2010-06-09

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  6. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  7. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  8. Low-damage high-throughput grazing-angle sputter deposition on graphene

    International Nuclear Information System (INIS)

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-01-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

  9. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Science.gov (United States)

    Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

    2013-07-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  10. Development of thin film cathodes for lithium-ion batteries in the material system Li–Mn–O by r.f. magnetron sputtering

    International Nuclear Information System (INIS)

    Fischer, J.; Adelhelm, C.; Bergfeldt, T.; Chang, K.; Ziebert, C.; Leiste, H.; Stüber, M.; Ulrich, S.; Music, D.; Hallstedt, B.; Seifert, H.J.

    2013-01-01

    Today most commercially available lithium ion batteries are still based on the toxic and expensive LiCoO 2 as a standard cathode material. However, lithium manganese based cathode materials are cheaper and environmentally friendlier. In this work cubic-LiMn 2 O 4 spinel, monoclinic-Li 2 MnO 3 and orthorhombic-LiMnO 2 thin films have been synthesized by non-reactive r.f. magnetron sputtering from two ceramic targets (LiMn 2 O 4 , LiMnO 2 ) in a pure argon discharge. The deposition parameters, namely target power and working gas pressure, were optimized in a combination with a post deposition heat treatment with respect to microstructure and electrochemical behavior. The chemical composition was determined using inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The films' crystal structure, phase evolution and morphology were investigated by X-ray diffraction, micro Raman spectroscopy and scanning electron microscopy. Due to the fact that these thin films consist of the pure active material without any impurities, such as binders or conductive additives like carbon black, they are particularly well suited for measurements of the intrinsic physical properties, which is essential for fundamental understanding. The electrochemical behavior of the cubic and the orthorhombic films was investigated by galvanostatic cycling in half cells against metallic lithium. The cubic spinel films exhibit a maximum specific capacity of ∼ 82 mAh/g, while a specific capacity of nearly 150 mAh/g can be reached for the orthorhombic counterparts. These films are promising candidates for future all solid state battery applications. - Highlights: ► Synthesis of 3 Li–Mn–O structures by one up-scalable thin film deposition method ► Formation of o-LiMnO 2 by r.f. magnetron sputtering in combination with post-annealing ► Discharge capacity with o-LiMnO 2 cathodes twice as high as for c-LiMn 2 O 4 ► Thin film deposition of m-Li 2 MnO 3 and

  11. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  12. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  13. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  14. Large-area few-layer MoS 2 deposited by sputtering

    KAUST Repository

    Huang, Jyun-Hong

    2016-06-06

    Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

  15. Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

    Science.gov (United States)

    Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

    2015-01-01

    For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

  16. Fabrication and Physical Properties of Titanium Nitride/Hydroxyapatite Composites on Polyether Ether Ketone by RF Magnetron Sputtering Technique

    Science.gov (United States)

    Nupangtha, W.; Boonyawan, D.

    2017-09-01

    Titanium nitride (TiN) coatings have been used very successfully in a variety of applications because of their excellent properties, such as the high hardness meaning good wear resistance and also used for covering medical implants. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. This paper aims to explain how to optimize deposition conditions for films synthesis on PEEK by varying sputtering parameters such as nitrogen flow rate and direction, deposition time, d-s (target-to-substrate distance) and 13.56 MHz RF power. The plasma conditions used to deposit films were monitored by the optical emission spectroscopy (OES). Titanium nitride/Hydroxyapatite composite films were performed by gas mixture with nitrogen and argon ratio of 1:3 and target-to-substrate distance at 8 cm. The gold colour, as-deposited film was found on PEEK with high hardness and higher surface energy than uncoated PEEK. X-ray diffraction characterization study was carried to study the crystal structural properties of these composites.

  17. Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

    Science.gov (United States)

    Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

    1999-01-01

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

  18. Structure and soft magnetic properties of sputter deposited MnZn-ferrite films

    NARCIS (Netherlands)

    Gillies, M.F.; Coehoorn, R.; van Zon, J.B.A.D.; Alders, D.

    1998-01-01

    In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600¿°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, µ. The

  19. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  20. Preparation and thermoelectric properties of RF co-sputtered CoSb{sub 3} skutteruddite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz [University of Science and Technology, Daejeon (Korea, Republic of); Han, Seungwoo [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of); University of Science and Technology, Daejeon (Korea, Republic of)

    2014-11-15

    Various skutterudites have been under investigation because of their potential application in thermoelectric materials and devices. These studies indicate that bulk materials with a skutterudite type structure show reasonable thermoelectric behaviors at elevated temperatures, which make them suitable for high-temperature thermoelectric applications. The results of thermoelectric-property measurements on skutterudite-phase CoSb{sub 3} thin films are presented in this study in order to extend the bulk material concept to micro-device applications by using thin film deposition technology. Thin films are deposited on oxidized silicon substrates by using the RF co-sputtering method. The film's composition is found to depend strongly on the deposition conditions. The temperature at which the deposited films transition from an amorphous state to a crystalline state has been reported to be about 153 .deg. C. Therefore, some experiments are performed with the substrate temperature kept at 200 .deg. C to obtain polycrystalline films. The crystal structure of the film is evaluated by using x-ray diffraction (XRD) measurements. Energy dispersive spectroscopy (EDS) is used to determine the film's composition whereas the surface morphology and the thickness are investigated and measured by using scanning electron microscopy (SEM). Finally, the thermoelectric properties, namely, the electrical resistivity and the Seebeck coefficient, are used to calculate the power factor of the deposited thin films and, their variations with temperature are measured. We report a maximum power factor of 0.41 mW/mK{sup 2} for the film deposited at a 200 .deg. C substrate temperature.

  1. Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

    1994-01-01

    The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

  2. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  3. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  4. First prototype Copper-Niobium RF Superconducting Cavity

    CERN Multimedia

    1983-01-01

    This is the first RF superconducting cavity made of copper with a very thin layer of pure niobium deposited on the inner wall by sputtering. This new developpment lead to a considerable increase of performance and stability of superconducting cavities and to non-negligible economy. The work was carried out in the ISR workshop. This technique was adopted for the LEP II accelerating cavities. At the centre is Cristoforo Benvenuti, inventor of this important technology, with his assistants, Nadia Circelli and Max Hauer, carrying the sputtering electrode. See also 8209255, 8312339.

  5. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  6. Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

    Science.gov (United States)

    Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

    2018-03-01

    Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

  7. MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

    Science.gov (United States)

    Liu, Can; Li, Zhengcao; Zhang, Zhengjun

    2013-12-01

    In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ⩽ x ⩽ 2.3) deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3) film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm-2 measured at 5 mV s-1), best rate capability and excellent stability at potentials below -0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ⩽ 3). A mechanism combining Mo(IV) oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

  8. MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

    Directory of Open Access Journals (Sweden)

    Can Liu

    2013-11-01

    Full Text Available In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ≤ x ≤ 2.3 deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3 film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm−2 measured at 5 mV s−1, best rate capability and excellent stability at potentials below −0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ≤ 3. A mechanism combining Mo(IV oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

  9. One-dimensional analysis of the rate of plasma-assisted sputter deposition

    International Nuclear Information System (INIS)

    Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

    2007-01-01

    In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

  10. Metastable bcc Fe-Mn alloys produced by rf sputtering

    International Nuclear Information System (INIS)

    Sumiyama, Kenji; Kadono, Masaru; Nakamura, Yoji

    1981-01-01

    Fe sub(1-x)Mn sub(x) alloy films obtained by rf sputtering technique have been investigated by X-ray diffraction, magnetization and Moessbauer effect measurements. The single bcc phase extends up to about x = 0.2, while a bcc-fcc mixed phase appears for x = 0.2 - 0.26. The lattice constants of the bcc phase are about 0.5% larger than those of the bulk specimens. The magnetization decreases monotonically with increasing x in the bcc phase, while it decreases sharply in the bcc-fcc mixed phase. These results are consistent with the Moessbauer spectra of these alloy films. The volume fraction of bcc and fcc phases has been estimated from Moessbauer analyses as well as magnetization measurements. (author)

  11. Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

    Science.gov (United States)

    Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

    2014-10-01

    Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

  12. Electrical transport properties of V{sub 2}O{sub 5} thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Giannetta, H.M.R., E-mail: hgiann@inti.gov.ar [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina); Calaza, C. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Lamas, D.G. [Universidad Nacional del Comahue CONICET-CITEFA — Laboratorio de Caracterización de Materiales, Facultad de Ingeniería, Neuquen (Argentina); Fonseca, L. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Fraigi, L. [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina)

    2015-08-31

    The present study investigates the main electrical transport mechanism in V{sub 2}O{sub 5} thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V{sub 2}O{sub 5} target and then oxidized at high temperature under air atmosphere to obtain the desired V{sub 2}O{sub 5} phase. The dependence of the electrical conductivity of the V{sub 2}O{sub 5} thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W{sub H} = 0.1682 eV, with a structural disorder energy W{sub D} = 0.2241 eV and an optical phonon frequency ν{sub 0} = 0.468 × 10{sup 13}s{sup −1}. These results are in agreement with data reported in literature for single crystal V{sub 2}O{sub 5}. However, the carrier mobility μ = 1.5019 × 10{sup −5} cm{sup 2}/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V{sub 2}O{sub 5} thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V{sub 2}O{sub 5} films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping.

  13. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  14. Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

    International Nuclear Information System (INIS)

    Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

    2010-01-01

    Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

  15. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-15

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  16. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    International Nuclear Information System (INIS)

    Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-01-01

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  17. Development of thin film cathodes for lithium-ion batteries in the material system Li–Mn–O by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, J., E-mail: julian.fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Adelhelm, C.; Bergfeldt, T. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Chang, K. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 46 52074 Aachen (Germany); Ziebert, C.; Leiste, H.; Stüber, M.; Ulrich, S. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D.; Hallstedt, B. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 46 52074 Aachen (Germany); Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2013-01-01

    Today most commercially available lithium ion batteries are still based on the toxic and expensive LiCoO{sub 2} as a standard cathode material. However, lithium manganese based cathode materials are cheaper and environmentally friendlier. In this work cubic-LiMn{sub 2}O{sub 4} spinel, monoclinic-Li{sub 2}MnO{sub 3} and orthorhombic-LiMnO{sub 2} thin films have been synthesized by non-reactive r.f. magnetron sputtering from two ceramic targets (LiMn{sub 2}O{sub 4}, LiMnO{sub 2}) in a pure argon discharge. The deposition parameters, namely target power and working gas pressure, were optimized in a combination with a post deposition heat treatment with respect to microstructure and electrochemical behavior. The chemical composition was determined using inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The films' crystal structure, phase evolution and morphology were investigated by X-ray diffraction, micro Raman spectroscopy and scanning electron microscopy. Due to the fact that these thin films consist of the pure active material without any impurities, such as binders or conductive additives like carbon black, they are particularly well suited for measurements of the intrinsic physical properties, which is essential for fundamental understanding. The electrochemical behavior of the cubic and the orthorhombic films was investigated by galvanostatic cycling in half cells against metallic lithium. The cubic spinel films exhibit a maximum specific capacity of ∼ 82 mAh/g, while a specific capacity of nearly 150 mAh/g can be reached for the orthorhombic counterparts. These films are promising candidates for future all solid state battery applications. - Highlights: ► Synthesis of 3 Li–Mn–O structures by one up-scalable thin film deposition method ► Formation of o-LiMnO{sub 2} by r.f. magnetron sputtering in combination with post-annealing ► Discharge capacity with o-LiMnO{sub 2} cathodes twice as high as for c

  18. Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

    Science.gov (United States)

    Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

    2013-11-01

    Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

  19. Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Hao, E-mail: haolei@imr.ac.cn [State Key Laboratory for Corrosion and Protection, Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Meihan [College of Mechanical Engineering, Shenyang University, Shenyang 110044 (China); Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka [Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297 (Japan)

    2013-11-15

    Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

  20. Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Piegari, Angela

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by r.f. plasma sputtering technique in Ar and Ar + O 2 gas mixture. The influence of the deposition conditions, film thickness, and substrate heating, as well as the post-annealing treatment on the optical and electrical properties of the ITO films has been investigated. The present study has extended the optical behaviour characterization of the ITO films in a wide UV-VIS-IR spectral region in addition to the comprehensive optical studies of this material at shorter wavelengths. The optical constants: refractive index (n), extinction (k) and absorption (α) coefficient, and the optical band gap (E go ) have been calculated for the ITO films in the spectral range between 350 and 2500 nm. A combination of several well-known theoretical models has been applied to describe precisely the complex optical behaviour of ITO films in separate spectral parts. In this approach, a good overlapping between the experimental and the simulated spectra in the whole investigated spectral region has been achieved. The deposition conditions and the optical and electrical properties of the ITO films have been optimized with respect to the requirements for their applications in art protection coatings

  1. Epitaxial growth of "infinite layer” thin films and multilayers by rf magnetron sputtering

    OpenAIRE

    Fàbrega, L.; Koller, E.; Triscone, J. M.; Fischer, Ø.

    2017-01-01

    We report on the preparation and characterization of epitaxial ACuO2 (A = Sr, Ca, Ba) thin films and multilayers with the so- called infinite layer (IL) structure, by rf magnetron sputtering. Films and multilayers without Ba have a remarkable crystal quality, whereas those containing this large ion are often multiphased and unstable. In spite of the excellent crystalline quality of these samples, obtaining thin films having both IL structure and displaying superconducting properties has not s...

  2. Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

    Science.gov (United States)

    Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

    2017-11-01

    Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

  3. Electrical insulation properties of RF-sputtered LiPON layers towards electrochemical stability of lithium batteries

    OpenAIRE

    Vieira, E. M. F.; Ribeiro, J. F.; Silva, Maria Manuela; Barradas, N. P.; Alves, E.; Alves, A.; Correia, M. R.; Gonçalves, L. M.

    2016-01-01

    Electrochemical stability, moderate ionic conductivity and low electronic conductivity make the lithium phosphorous oxynitride (LiPON) electrolyte suitable for micro and nanoscale lithium batteries. The electrical and electrochemical properties of thin-film electrolytes can seriously compromise full battery performance. Here, radio-frequency (RF)-sputtered LiPON thin films were fabricated in nitrogen plasma under different working pressure conditions. With a slight decrease in ...

  4. Influence of rf-magnetron Sputtered ITO and Al:ZnO on Photovoltaic Behaviour Related to CuInSe2-Based Photovoltaic Solar Cells

    International Nuclear Information System (INIS)

    Martinez, M.A.; Guillen, C; Dona, J. M.; Herrero, J; Gutierrez, M. T.

    2000-01-01

    This paper describes several investigations, made in the CIEMAT, on the capability of depositing transparent conducting oxides at room temperature by rf-magnetron sputtering, and their application in CuInSe 2 -based photovoltaic solar cells. ITO and Al:ZnO thin films having simultaneously high transmittance in the visible range and low resistivity, 10 3 -10 - 4 Ωcm, can be obtained only if oxygen mass-flow rate is constrained to a very narrow range (0.5 - 1 sccm). Cell efficiency enhance when transparent conducting oxides are made without intentional heating and, after, the total devices are annealed in air at 200 degree centigree. (Author) 40 refs

  5. Entrapment of krypton in sputter deposited metals: a storage medium for radioactive gases

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Bayne, M.A.; Moss, R.W.

    1979-04-01

    Sputter deposition of metals with a negative substrate bias results in a deposit containing relatively large concentrations of the sputtering gas. This phenomenon has been applied as a technique for storage of the radioactive gas, 85 Kr, which is generated in nuclear fuels for power production. Alloys which sputter to yield an amorphous product have been shown to contain up to 12 atom % Kr [42 cm 3 of Kr(STP)/g of deposit; concentration equivalent to a gas at 4380 psi pressure]. Release from these metals occurs at so low a rate that extrapolation to long times yields a 85 Kr release at 300 0 C of about 0.06% in 100 years. A preliminary evaluation of the engineering feasibility and economics of the sputtering process indicates that 85 Kr can be effectively trapped in a solid matrix with currently available techniques on a scale required for handling DOE-generated waste or commercial reprocessed fuels and that the cost should not be a limiting factor

  6. Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

    2013-05-01

    Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

  7. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  8. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  9. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  10. Sputter deposited titanium disilicide at high substrate temperatures

    Science.gov (United States)

    Tanielian, M.; Blackstone, S.; Lajos, R.

    1984-08-01

    Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

  11. Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

    Institute of Scientific and Technical Information of China (English)

    Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

    2011-01-01

    Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

  12. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

    International Nuclear Information System (INIS)

    Greene, J.E.

    1984-01-01

    The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

  13. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  14. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  15. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  16. Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

    2011-08-15

    In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  18. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  19. Deposition and characterization of sputtered hexaboride coatings

    International Nuclear Information System (INIS)

    Waldhauser, W.

    1996-06-01

    Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  20. Deposition and characterization of single magnetron deposited Fe:SnO{sub x} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Kormunda, Martin, E-mail: martin.kormunda@ujep.cz [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Fischer, Daniel; Hertwig, Andreas; Beck, Uwe [BAM Federal Institute for Materials Research and Testing, Division 6 4 Surface Technologies, Unter den Eichen 44-46, 12203 Berlin (Germany); Sebik, Matej; Pavlik, Jaroslav [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Esser, Norbert [Leibniz-Institut für Analytische Wissenschaften — ISAS e.V., Department Berlin, Schwarzschildstr. 12, 12489 Berlin (Germany)

    2015-11-30

    Coatings deposited by magnetron co-sputtering from a single RF magnetron with a ceramic SnO{sub 2} target with iron inset in argon plasma were studied. The mass spectra of the process identified Sn{sup +} and SnO{sup +} species as the dominant species sputtered from the target, but no SnO{sub 2}{sup +} species were detected. The dominant positive ions in argon plasma are Ar{sup +} species. The only detected negative ions were O{sup −}. Sputtered neutral tin related species were not detected. Iron related species were also not detected because their concentration is below the detection limit. The concentration of iron dopant in the tin oxide coatings was controlled by the RF bias applied on the substrate holder while the discharge pressure also has some influence. The iron concentration was in the range from 0.9 at.% up to 19 at.% increasing with the substrate bias while the sheet resistivity decreases. The stoichiometry ratio of O/(Sn + Fe) in the coatings increased from 1.7 up to 2 in dependence on the substrate bias from floating bias (− 5 V) up to − 120 V of RF self-bias, respectively. The tin in the coatings was mainly bonded in Sn{sup 4+} state and iron was mainly in Fe{sup 2+} state when other tin bonding states were detected only in a small amounts. Iron bonding states in contrary to elemental compositions of the coatings were not influenced by the RF bias applied on the substrate. The coatings showed high transparency in the visible spectral range. However, an increased metallic behavior could be detected by using a higher RF bias for the deposition. The X-ray diffraction patterns and electron microscopy pictures made on the coatings confirmed the presence of an amorphous phase. - Highlights: • RF magnetron sputtering of SnO{sub 2} target with Fe inset in argon investigated by mass spectrometry • Optical properties of Fe doped SnO{sub x} coatings characterized • Analyses of overlapped XPS peaks at a spectrum from Fe doped SnO{sub x} coatings

  1. Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

    International Nuclear Information System (INIS)

    Huang, C.-L.; Hsu, C.-H.

    2004-01-01

    Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O 2 ) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different Ar/O 2 ratios and substrate temperatures have been investigated. The surface structural and morphological characteristics analyzed by x-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as Ar/O 2 ratio (100/0-80/20) and substrate temperature (350 deg. C-450 deg. C). The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the films increased with the increase of both the Ar partial pressure and the substrate temperature. At a Ar/O 2 ratio of 100/0, rf power level of 350 W and substrate temperature of 450 deg. C, the Zr 0.8 Sn 0.2 TiO 4 films with 6.44 μm thickness possess a dielectric constant of 42 (at 10 MHz), a dissipation factor of 0.065 (at 10 MHz), and a leakage current density of 2x10 -7 A/cm 2 at an electrical field of 1 kV/cm

  2. Corrosion resistance of ZrNxOy thin films obtained by rf reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Ariza, E.; Rocha, L.A.; Vaz, F.; Cunha, L.; Ferreira, S.C.; Carvalho, P.; Rebouta, L.; Alves, E.; Goudeau, Ph.; Riviere, J.P.

    2004-01-01

    The main aim of this work is the investigation of the corrosion resistance of single layered zirconium oxynitride, ZrN x O y , thin films in artificial sweat solution at ambient temperature. The films were produced by rf reactive magnetron sputtering, using a pure Zr target at a constant temperature of 300 deg. C. Two different sets of samples were produced. In the first set of films, the substrate bias voltage was the main variable, whereas in the second set, the flow rate of reactive gases (oxygen/nitrogen ratio) was varied. The control of the amount of oxygen allowed the film properties to be tailored from those of covalent zirconium nitride to those of the correspondent ionic oxide. The corrosion behaviour was evaluated by potentiodynamic polarization and Electrochemical Impedance Spectroscopy (EIS) tests. The analysis of EIS data provided detailed information of the corrosion processes occurring at the surface of the system throughout the immersion time. The modifications of the coating microstructure and/or chemical composition induced by the variation of the deposition parameters were also evaluated and correlated with the corrosion mechanisms occurring in each system

  3. Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Elanchezhiyan, J.; Bhuvana, K.P.; Gopalakrishnan, N.; Balasubramanian, T.

    2008-01-01

    In this paper, we have presented the surface effect of the substrates on Mn doped ZnO (Zn 1-x Mn x O) thin films grown on Si(1 0 0) and sapphire [i.e. Al 2 O 3 (0 0 0 1)] by RF magnetron sputtering. These grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and vibrating sample magnetometer (VSM) to know its structural, optical and magnetic properties. All these properties have been found to be strongly influenced by the substrate surface on which the films have been deposited. The XRD results show that the Mn doped ZnO films deposited on Si(1 0 0) exhibit a polycrystalline nature whereas the films on sapphire substrate have only (0 0 2) preferential orientations indicating that the films are single crystalline. The studies of room temperature PL spectra reveal that the Zn 1-x Mn x O/Si(1 0 0) system is under severe compressive strain while the strain is almost relaxed in Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system. It has been observed from VSM studies that Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system shows ferromagnetic nature while the paramagnetic behaviour observed in Zn 1-x Mn x O/Si(1 0 0) system

  4. Influence of sputtering power on the optical properties of ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  5. Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126.com; Hu, Guangcai; Hu, Xie; Chen, Xipeng; Li, Pengzhi; Xiang, Weidong, E-mail: xiangweidong001@126.com

    2017-04-15

    The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

  6. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  7. Electrical properties of resistive switches based on Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films prepared by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A.; Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Calzada Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guillen R, J. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Tampico, Puerto Industrial, Altamira 89600, Tamaulipas (Mexico); Cruz, M. P. [UNAM, Centro de Nanociencias y Nanotecnologia, Km. 107 Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana, Cuba (Cuba); Melendez L, M., E-mail: amarquez@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, A. P. 14-740, 07000 Mexico D. F. (Mexico)

    2010-07-01

    In this work, was proposed the use of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}(0{<=}x{<=}1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO{sub 3} and SrTiO{sub 3} targets. The chemical composition (x parameter) in the deposited Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3}/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba{sub 1-{chi}S}r{sub {chi}T}iO{sub 3} thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO{sub 3} lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  8. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  9. Type II textured molybdenum disulphide films produced by direct vapour transport and rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Bohlken, S.F.; Lemon, K.D.; Jakovidis, G.; Taheri, E.H.

    1999-01-01

    Full text: Molybdenum disulphide (MoS 2 ) is one of the few naturally occurring Layered Transition Metal Dichalcogenides and is the primary source for elemental molybdenum. It displays exceptional lubrication performance in both vacuum and atmospheric conditions over a wide temperature range. An important emerging application of MoS 2 and related materials is photovoltaics. Films of MoS 2 exhibit several morphologies described by the orientation of platelets with respect to the substrate. Films with platelets perpendicular or parallel to the substrate are referred to by their morphology, which is type-I or type-II respectively. Production of exclusive type-II films is highly desirable in applications involving lubrication and photovoltaics. For example, type-II morphology reduces friction and minority carrier recombination centres, thus improving tribological and photovoltaic performance. We have successfully produced type-II films using both direct vapour transport and rf-magnetron sputtering Continuous polycrystalline films (∼ 10 μm thick) grown in our laboratory using vapour transport have typical areas 1000 mm 2 . A novel ejecta filtration technique was applied to rf-magnetron sputtering. Films produced using this approach retain exclusive type-II morphology at thicknesses where type-I would normally be observed (∼ 200nm)

  10. Krypton-85 storage in sputter-deposited amorphous metals

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Lytle, J.M.; Gordon, N.R.; Knoll, R.W.

    1982-06-01

    After comparing options for storing radioactive krypton gas, the United States Department of Energy selected ion implantation of the gas into a sputter-deposited metal matrix as the reference process. This technique is being developed with pilot-scale testing and further characterization of the deposited product. The process involves implanting krypton atoms into a growing deposit during the sputtering process. An amorphous metal deposit of nominal composition Ni 0 81 La 0 09 Kr 0 10 has been selected for further studies because of the high krypton loading, high sputtering yield, relatively low cost of the metallic components, resistance to corrosion, and stability of the product. The krypton release from this amorphous metal is described as an activated diffusion process which increases linearly with the square root of time. Studies of krypton release rate as a function of temperature were completed and an activation energy for the diffusion of 70 kcal/mole obtained. From these data, we estimated that the krypton release during the first ten years would be 0.5% for a maximum temperature of 350 0 C. The actual release of the krypton during storage was projected to be lower by a factor of 10 7 with the maximum temperature only 220 0 C. Thermal analysis studies show two energy releases occurring with krypton-containing alloys: one associated with recrystallization of the amorphous alloy and a second associated with krypton release. The total energy release between 100 and 800 0 C was less than 50 cal/g. Estimates are given for the cost of operation of the ion implantation process for solidification of the krypton-85 from a 2000-tonne heavy metal/year reprocessing plant. The present value costs, in 1981 dollars including capital and operating costs and assuming a 30-year life, are about $26M for the lifetime of the plant. Annual energy consumption of the process was estimated to be 3.9 M kWh/year

  11. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  12. Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

    2009-03-15

    Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

  13. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe100−xCox(001) thin films (x < 11)

    International Nuclear Information System (INIS)

    Kusaoka, A.; Kimura, J.; Takahashi, Y.; Inaba, N.; Kirino, F.; Ohtake, M.; Futamoto, M.

    2015-01-01

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe 100−x Co x (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins

  14. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  15. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  16. Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

    Science.gov (United States)

    Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

    2018-04-01

    Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

  17. Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films

    International Nuclear Information System (INIS)

    Shen, Y.G.

    2003-01-01

    A combined investigation of mechanical stress generation by in situ substrate curvature measurements during the growth of MoN x thin films, with 0≤x≤0.35, and of structural properties by ex situ X-ray diffraction (XRD), transmission electron microscopy (TEM), transmission electron diffraction (TED), X-ray photoelectron spectroscopy (XPS), and electron energy-loss spectroscopy (EELS) is reported. It was found that the Mo film stresses strongly depended on the Ar sputtering pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 6-12 mTorr. For pressures exceeding ∼40 mTorr, the stress in the film was nearly zero. Cross-sectional TEM measurements indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the mechanical tensile stresses. It was also found that the properties of the deposited MoN x films depended not only on the nitrogen partial pressure in Ar-N 2 gas mixtures but also on the total sputtering-gas pressure. Cross-sectional TEM studies showed that an average column width for 160 nm-thick films near stoichiometry of Mo 2 N was about ∼15-20 nm. Using the electron scattering data collected from a range of crystalline samples for calculating the pair distribution function (PDF) by Fourier transformation in real space, Mo-N and Mo-Mo bonding in the films was also identified. Once the Mo 2 N phase was formed, the density, microstructure and bonding feature were similar and insensitive to the total sputtering pressure used in this study

  18. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    International Nuclear Information System (INIS)

    Hussain, Amreen A.; Pal, Arup R.; Kar, Rajib; Bailung, Heremba; Chutia, Joyanti; Patil, Dinkar S.

    2014-01-01

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO 2 ) nanocomposite thin films. The deposition of PPani-TiO 2 nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO 2 nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO 2 nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H 2 SO 4 doping in PPani-TiO 2 nanocomposite. • PPani-TiO 2 nanocomposite based self-powered-hybrid photodetector

  19. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  20. Hybrid biocomposites based on titania nanotubes and a hydroxyapatite coating deposited by RF-magnetron sputtering: Surface topography, structure, and mechanical properties

    Science.gov (United States)

    Chernozem, Roman V.; Surmeneva, Maria A.; Krause, Bärbel; Baumbach, Tilo; Ignatov, Viktor P.; Tyurin, Alexander I.; Loza, Kateryna; Epple, Matthias; Surmenev, Roman A.

    2017-12-01

    In this study, biocomposites based on porous titanium oxide structures and a calcium phosphate (CaP) or hydroxyapatite (HA) coating are described and prepared. Nanotubes (NTs) with different pore dimensions were processed using anodic oxidation of Ti substrates in a NH4F-containing electrolyte solution at anodization voltages of 30 and 60 V with a DC power supply. The external diameters of the nanotubes prepared at 30 V and 60 V were 53 ± 10 and 98 ± 16 nm, respectively. RF-magnetron sputtering of the HA target in a single deposition run was performed to prepare a coating on the surface of TiO2 NTs prepared at 30 and 60 V. The thickness of the CaP coating deposited on the mirror-polished Si substrate in the same deposition run with TiO2 NTs was determined by optical ellipsometry (SE) 95 ± 5 nm. Uncoated and CaP-coated NTs were annealed at 500 °C in air. Afterwards, the presence of TiO2 (anatase) was observed. The scanning electron microscopy (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and nanoindentation results revealed the influence that the NT dimensions had on the CaP coating deposition process. The tubular surfaces of the NTs were completely coated with the HA coating when prepared at 30 V, and no homogeneous CaP coating was observed when prepared at 60 V. The XRD patterns show peaks assigned to crystalline HA only for the coated TiO2 NTs prepared at 30 V. High-resolution XPS spectra show binding energies (BE) of Ca 2p, P 2p and O 1s core-levels corresponding to HA and amorphous calcium phosphate on TiO2 NTs prepared at 30 V and 60 V, respectively. Fabrication of TiO2 NTs results in a significant decrease to the elastic modulus and nanohardness compared to the Ti substrate. The porous structure of the NTs causes an increase in the elastic strain to failure of the coating (H/E) and the parameter used to describe the resistance of the material to plastic deformation (H3/E2) at the nanoscale level compared to the Ti substrate. Furthermore

  1. SHI induced effects on the electrical and optical properties of HfO{sub 2} thin films deposited by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P., E-mail: appsp@uohyd.ernet.in

    2016-07-15

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO{sub 2} as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO{sub 2} is the only alternative to reduce the leakage current. HfO{sub 2} is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO{sub 2} thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO{sub 2}/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  2. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    International Nuclear Information System (INIS)

    Hsu, Feng-Hao; Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song; Houng, Mau-Phon

    2013-01-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10 −4 Ω cm, carrier mobility of 30 cm 2 /V s, highest carrier concentration of 4.9 × 10 20 cm −3 , and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  3. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  4. Influence of annealing temperature on the structural, mechanical and wetting property of TiO2 films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Pradhan, Swati S.; Sahoo, Sambita; Pradhan, S.K.

    2010-01-01

    TiO 2 films have been deposited on silicon substrates by radio frequency magnetron sputtering of a pure Ti target in Ar/O 2 plasma. The TiO 2 films deposited at room temperature were annealed for 1 h at different temperatures ranging from 400 o C to 800 o C. The structural, morphological, mechanical properties and the wetting behavior of the as deposited and annealed films were obtained using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, nanoindentation and water contact angle (CA) measurements. The as deposited films were amorphous, and the Raman results showed that anatase phase crystallization was initiated at annealing temperature close to 400 o C. The film annealed at 400 o C showed higher hardness than the film annealed at 600 o C. In addition, the wettability of film surface was enhanced with an increase in annealing temperature from 400 o C to 800 o C, as revealed by a decrease in water CA from 87 o to 50 o . Moreover, the water CA of the films obtained before and after UV light irradiation revealed that the annealed films remained more hydrophilic than the as deposited film after irradiation.

  5. Recent Developments in R.F. Magnetron Sputtered Thin Films for pH Sensing Applications—An Overview

    OpenAIRE

    D. K. Maurya; A. Sardarinejad; K. Alameh

    2014-01-01

    pH sensors are widely used in chemical and biological applications. Metal oxides-based pH sensors have many attractive features including insolubility, stability, mechanical strength, electrocatalyst and manufacturing technology. Various metal oxide thin films prepared by radio frequency (R.F.) magnetron sputtering have attractive features, including high pH sensitivity, fast response, high resolution, good stability and reversibility as well as potential for measuring pH under conditions th...

  6. ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

    2016-08-01

    Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

  7. Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

    Science.gov (United States)

    Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

    2018-06-01

    Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

  8. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  9. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  10. Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sánchez-Hernández, Z.E. [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); CICATA—Altamira, IPN. Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Domínguez-Crespo, M.A., E-mail: mdominguezc@ipn.mx [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Torres-Huerta, A.M.; Onofre-Bustamante, E. [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Andraca Adame, J. [Instituto Politécnico Nacional, Centro de Nanociencias Micro y Nanotecnologías, Departamento de DRX, C. P. 07300, Mexico, DF, México (Mexico); Dorantes-Rosales, H. [Instituto Politécnico Nacional, ESIQIE, Departamento de Metalurgia, C. P. 07300 Mexico, DF, México (Mexico)

    2014-05-01

    The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO{sub 2} + 8% Y{sub 2}O{sub 3}) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphate buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure.

  11. Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Sánchez-Hernández, Z.E.; Domínguez-Crespo, M.A.; Torres-Huerta, A.M.; Onofre-Bustamante, E.; Andraca Adame, J.; Dorantes-Rosales, H.

    2014-01-01

    The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO 2 + 8% Y 2 O 3 ) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphate buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure

  12. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Gupta, Vinay

    2012-01-01

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  13. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  14. Impurities in chromium deposits produced by electroplating and physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dini, J.W.

    1994-05-01

    Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

  15. Impact of self-assembled monolayer assisted surface dipole modulation of PET substrate on the quality of RF-sputtered AZO film

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Thieu Thi Tien [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Faculty of Chemical Engineering and Food Technology, Ba Ria-Vung Tau University, Vung Tau (Viet Nam); Mahesh, K.P.O. [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Lin, Pao-Hung [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tai, Yian, E-mail: ytai@mail.ntust.edu.tw [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2017-05-01

    Highlights: • We use SAMs functionalizing the PET substrates to generate different surface dipoles. • We deposited AZO film on pristine and SAMs-modified PET substrate. • The positive dipole moment of PET surface promotes the crystallinity of AZO film. • The negative dipole moment of PET surface deteriorates the crystallinity of AZO film. • The electrical properties of AZO/PET changes upon the variation of the crystallinity. - Abstract: In this study, we fabricated the electron donating/withdrawing group functionalized organosilane self-assembled monolayers (SAMs) on transparent polyethylene terephthalate (PET) flexible substrate followed by the deposition of aluminum doped zinc oxide (AZO) using RF magnetron sputtering at room temperature. The effect of different SAMs on transparent PET substrates and AZO films were studied by contact angle (CA), X-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM), X-ray diffraction (XRD), Field-Emission scanning electron microscope (FE-SEM), Hall measurement and UV–vis spectroscopy (UV–vis). The results presented that the surface dipole (i.e. electron-donating/withdrawing) of different SAMs functionalized PET substrates affected the quality of the AZO films which deposited on top of them. The crystallinity, the charge mobility, and the carrier concentration of the AZO improved when the film was deposited on the PET functionalized with electron donating group, which was possibly due to favored interaction between electron donating group and Al ions.

  16. Impact of self-assembled monolayer assisted surface dipole modulation of PET substrate on the quality of RF-sputtered AZO film

    International Nuclear Information System (INIS)

    Vo, Thieu Thi Tien; Mahesh, K.P.O.; Lin, Pao-Hung; Tai, Yian

    2017-01-01

    Highlights: • We use SAMs functionalizing the PET substrates to generate different surface dipoles. • We deposited AZO film on pristine and SAMs-modified PET substrate. • The positive dipole moment of PET surface promotes the crystallinity of AZO film. • The negative dipole moment of PET surface deteriorates the crystallinity of AZO film. • The electrical properties of AZO/PET changes upon the variation of the crystallinity. - Abstract: In this study, we fabricated the electron donating/withdrawing group functionalized organosilane self-assembled monolayers (SAMs) on transparent polyethylene terephthalate (PET) flexible substrate followed by the deposition of aluminum doped zinc oxide (AZO) using RF magnetron sputtering at room temperature. The effect of different SAMs on transparent PET substrates and AZO films were studied by contact angle (CA), X-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM), X-ray diffraction (XRD), Field-Emission scanning electron microscope (FE-SEM), Hall measurement and UV–vis spectroscopy (UV–vis). The results presented that the surface dipole (i.e. electron-donating/withdrawing) of different SAMs functionalized PET substrates affected the quality of the AZO films which deposited on top of them. The crystallinity, the charge mobility, and the carrier concentration of the AZO improved when the film was deposited on the PET functionalized with electron donating group, which was possibly due to favored interaction between electron donating group and Al ions.

  17. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    Science.gov (United States)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  18. Sputtering ultra-small Pt on nanographitic flakes deposited by electrophoresis for ethanol electro oxidation

    Science.gov (United States)

    Daryakenari, Ahmad Ahmadi; Daryakenari, Mohammad Ahmadi; Omidvar, Hamid

    2018-01-01

    To acquire highly efficient and cost-effective fuel cells, numerous research works have been carried out to the development low cost and excellent performance of electrocatalysts. In this paper, a solution-based electrophoretic deposition (EPD) technique for fabrication of Pt-based catalyst layers is studied. Nanographitic flake coatings used as catalyst support for sputtered platinium (Pt) were fabricated via the electrophoretic deposition (EPD) of dispersed nanographitic flakes in isopropyl alcohol. Magnesium nitrate hexahydrate (MNH) was used as an additive binder in the EPD process. Subsequently, the platinium particles were deposited by a direct sputtering on the fabricated nanographitic flake coatings.

  19. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  20. Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

    International Nuclear Information System (INIS)

    Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

    2008-01-01

    Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

  1. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

    International Nuclear Information System (INIS)

    Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

    2005-01-01

    The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

  2. Tribological characterization of TiN coatings prepared by magnetron sputtering

    Science.gov (United States)

    Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

    2018-05-01

    Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

  3. Indium zinc oxide films deposited on PET by LF magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

    2007-01-01

    Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

  4. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  5. In situ crystallization of sputter-deposited TiNi by ion irradiation

    International Nuclear Information System (INIS)

    Ikenaga, Noriaki; Kishi, Yoichi; Yajima, Zenjiro; Sakudo, Noriyuki

    2013-01-01

    Highlights: ► We developed a sputtering deposition process equipped with an ion irradiation system. ► Ion irradiation enables crystallization at lower substrate temperature. ► Ion fluence has an effective range for low-temperature crystallization. ► Crystallized films made on polyimide by the process show the shape memory effect. -- Abstract: TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process. In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence

  6. Irreversible thermochromic response of RF sputtered nanocrystalline BaWO4 films for smart window applications

    Directory of Open Access Journals (Sweden)

    C. Anil Kumar

    2015-10-01

    Full Text Available We report irreversible thermochromic behaviour of BaWO4 (BWO films for the first time. BWO films have been deposited at different substrate temperatures (RT, 200, 400, 600 and 800 °C using RF magnetron sputtering in pure argon plasma. BWO films deposited at 800 °C exhibit crystalline nature. Also, BWO films deposited in the temperature range of 400 - 600 °C exhibit WO3 as a secondary phase and its weight percentage decreases with an increase in deposition temperature, whereas the films deposited at 800 °C exhibited pure tetragonal phase. FESEM images revealed that as the average particle sizes of the films are higher as compared with the thickness of the films and is explained based on Avrami type nucleation and growth. The transmittance of the films decreases with an increase in deposition temperature up to 600 °C and increases thereafter. Films deposited at 600 °C show ≤ 20% transmittance, looking at the films deposited at room temperature and 800 °C exhibits 90 and 70%, respectively. The refractive index and extinction coefficient of the films show profound dependence on crystallinity and packing density. The optical bandgap of BWO films increases significantly with an increase in O2% during the deposition. The optical bandgap of the BWO films deposited at different temperatures in pure argon plasma, are in the range of 3.7 to 3.94 eV whereas the films deposited at 600 °C under different O2 plasma are in the range of 3.6 - 4.5 eV. The formations of colour centres are associated with the oxygen vacancies, which are clearly seen from the optical bandgap studies. The observed irreversible thermochromic behaviour in BWO films is attributed to the presence of oxygen vacancies that arises due to the electrons trapped at oxygen vacancies causing an inter valence charge transfer of W5+ to W6+ and is confirmed through the change in the optical density (ΔOD. Further, the Raman spectra are being used to quantify the presence

  7. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Amreen A. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Pal, Arup R., E-mail: arpal@iasst.gov.in [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Kar, Rajib [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India); Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Patil, Dinkar S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India)

    2014-12-15

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO{sub 2}) nanocomposite thin films. The deposition of PPani-TiO{sub 2} nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO{sub 2} nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO{sub 2} nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H{sub 2}SO{sub 4} doping in PPani-TiO{sub 2} nanocomposite. • PPani-TiO{sub 2} nanocomposite based self-powered-hybrid photodetector.

  8. Microstructure and properties of in-situ rf sputtered YBa{sub 2}Cu{sub 3}O{sub 7} thin films for microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Reagor, D.W.; Houlton, R.J.; Garzon, F.H.; Hawley, M.; Raistrick, I.D. [Los Alamos National Lab., NM (United States); Piza, M.E. [Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science

    1992-06-01

    The residual surface resistance of a number of films of YBa{sub 2}Cu{sub 3}O{sub 7}, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45{degrees}-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.

  9. Microstructure and properties of in-situ rf sputtered YBa sub 2 Cu sub 3 O sub 7 thin films for microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Reagor, D.W.; Houlton, R.J.; Garzon, F.H.; Hawley, M.; Raistrick, I.D. (Los Alamos National Lab., NM (United States)); Piza, M.E. (Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science)

    1992-01-01

    The residual surface resistance of a number of films of YBa{sub 2}Cu{sub 3}O{sub 7}, prepared by off-axis sputtering onto MgO substrates, has been measured using parallel-plate resonator technique. Deposition conditions were kept constant, apart from the substrate temperature. There is no correlation between surface resistance and other important microscopic parameters, such as T{sub c} and c-axis lattice parameter. There is, however, a trend to higher R{sub s} with increasing volume fraction of in-plane misoriented material, although the correlation is not perfect. Furthermore, we have found that most of the misoriented material is localized at the film substrate interface and therefore is probably not responsible for most of the RF losses. The data suggest that at higher deposition temperatures, there is an increasing tendency for 45{degrees}-misoriented material to appear in the films, and it may be that a significant fraction of this material is present closer to the free film surface. STM qualitatively supports this conclusion.

  10. Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni–Mn–Ga thin film on PMN–PT

    International Nuclear Information System (INIS)

    Teferi, M.Y.; Amaral, V.S.; Lounrenco, A.C.; Das, S.; Amaral, J.S.; Karpinsky, D.V.; Soares, N.; Sobolev, N.A.; Kholkin, A.L.; Tavares, P.B.

    2012-01-01

    In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni–Mn–Ga (NMG) alloy and lead magnesium niobate–lead titanate (PMN–PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 °C) deposition of the film on single crystal of piezoelectric PMN–PT substrate using rf magnetron co-sputtering of Ni 50 Mn 50 and Ni 50 Ga 50 targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of ∼240 emu/cm 3 and Curie temperature of ∼337 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (α ME ) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal–Transverse (L–T) ME coupling mode by lock-in technique. A maximum ME coefficient α ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN–PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. - Highlights: ► Multiferroic NMG/PMN–PT heterostructure prepared by depositing NMG alloy thin film on PMN–PT substrate. ► The film is in ferromagnetically ordered martensite state at room temperature. ► The substrate maintains its piezoelectric state after deposition. ► The heterostructure exhibits ME effect with maximum of α ME of 3.02 mV/cm Oe.

  11. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  12. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Science.gov (United States)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  13. Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

    Energy Technology Data Exchange (ETDEWEB)

    Kusaka, Kazuya, E-mail: kusaka@tokushima-u.ac.jp [Institute of Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Maruoka, Yutaka, E-mail: ymaruoka1116@gmail.com [Graduate School of Advanced Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Matsue, Tatsuya, E-mail: tmatsue@mat.niihama-nct.ac.jp [Department of Environmental Materials Engineering National Institute of Technology, NIIHAMA College, 7-1, Yakumo-cho, Niihama, Ehime 7928580 (Japan)

    2016-05-15

    Zinc oxide (ZnO) films were deposited on a soft polyimide sheet substrate by radio frequency sputtering with a ZnO powder target, and the films' crystal orientations and residual stress were investigated using x-ray diffraction as a function of substrate temperature. C-axis oriented ZnO films were achieved using this ZnO powder target method. The ZnO films exhibited high compressive residual stresses between −0.7 and −1.4 GPa. Finally, the authors examined the strength of the obtained film by applying tensile bending loads. No cracks were observed on the surfaces of the ZnO films after a bending test using cylinders with diameters >25 mm. After a bending test using a cylinder with a diameter of 19 mm, large cracks were formed on the films. Therefore, the authors concluded that the tensile bending strength of the obtained films was greater than ∼420 MPa.

  14. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  15. Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

    International Nuclear Information System (INIS)

    Chow, R; Ellis, A D; Loomis, G E; Rana, S I

    2007-01-01

    High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

  16. A High-Intensity, RF Plasma-Sputter Negative Ion Source

    International Nuclear Information System (INIS)

    Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A.; Zhang, T.

    1999-01-01

    A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, - (610 microA); F - (100 microA); Si - (500 microA); S - (500 microA); P - (125 microA); Cl - (200 microA); Ni - (150 microA); Cu - (230 microA); Ge - (125 microA); As - (100 microA); Se - (200 microA); Ag - (70 microA); Pt - (125 microA); Au - (250 microA). The normalized emittance var e psilon n of the source at the 80% contour is: var e psilon n = 7.5 mm.mrad.(MeV) 1/2 . The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report

  17. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  18. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  19. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  20. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    International Nuclear Information System (INIS)

    Matyash, K; Froehlich, M; Kersten, H; Thieme, G; Schneider, R; Hannemann, M; Hippler, R

    2004-01-01

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed

  1. Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Matyash, K [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Froehlich, M [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Kersten, H [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Thieme, G [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Schneider, R [Max-Planck-Institut fuer Plasmaphysik, Teilinstitut Greifswald, Wendelsteinstrasse 1, 17489 Greifswald (Germany); Hannemann, M [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Hippler, R [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany)

    2004-10-07

    During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed.

  2. The pH Sensing Properties of RF Sputtered RuO2 Thin-Film Prepared Using Different Ar/O2 Flow Ratio

    Directory of Open Access Journals (Sweden)

    Ali Sardarinejad

    2015-06-01

    Full Text Available The influence of the Ar/O2 gas ratio during radio frequency (RF sputtering of the RuO2 sensing electrode on the pH sensing performance is investigated. The developed pH sensor consists in an RF sputtered ruthenium oxide thin-film sensing electrode, in conjunction with an electroplated Ag/AgCl reference electrode. The performance and characterization of the developed pH sensors in terms of sensitivity, response time, stability, reversibility, and hysteresis are investigated. Experimental results show that the pH sensor exhibits super-Nernstian slopes in the range of 64.33–73.83 mV/pH for Ar/O2 gas ratio between 10/0–7/3. In particular, the best pH sensing performance, in terms of sensitivity, response time, reversibility and hysteresis, is achieved when the Ar/O2 gas ratio is 8/2, at which a high sensitivity, a low hysteresis and a short response time are attained simultaneously.

  3. HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2014-03-24

    Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

  4. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  5. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    International Nuclear Information System (INIS)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-01-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  6. Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

    Science.gov (United States)

    Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

    2009-05-01

    Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

  7. Study on helium-charged titanium films deposited by DC-magnetron sputtering

    International Nuclear Information System (INIS)

    Shi Liqun; Jin Qinhua; Liu Chaozhuo; Xu Shilin; Zhou Zhuying

    2005-01-01

    Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%) incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage (or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retaining He in sputtering Ti films is much higher than that in the coarse-grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X-ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase. (authors)

  8. Microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang Tianjin; Li Songzhan; Zhang Baishun; Pan Ruikun; Jiang Juan; Huang Weihua

    2005-01-01

    Ba 0.65 Sr 0.35 TiO 3 thin films have been prepared by RF magnetron sputtering. The crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), scan electronic microstructure (SEM) and atom force microstructure (AFM). As-deposited thin films were found to be amorphous. The more intense characteristic diffraction peaks and improved crystallization can be observed in (Ba,Sr)TiO 3 (BST) thin films deposited at high temperatures and annealed at higher than 650degC. Optical constants were determined from transmittance spectra by using the envelope method. The refractive index increased from 1.778 to 1.961 as the substrate temperature increased from 560 to 650degC. Both the refractive index and extinction coefficient increased with annealing temperature. The refractive index and extinction coefficient increased when the oxygen-to-argon ratio increased from 1:4 to 1:1. The dispersion of relation of the extinction coefficient vs wavelength was also investigated. The optical band gap of BST thin films was found to be about 3.56 eV, which decreased apparently with increasing annealing temperature. (author)

  9. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  10. Plasma diagnostic studies of the influence of process variables upon the atomic and molecular species ejected from (1-x)Li4SiO4:xLi3PO4 targets during rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Wachs, A.L.; Bates, J.B.; Dudney, N.J.; Luck, C.F.

    1990-01-01

    The deposition of thin-film electrolytes is a critical step in the development of lithium microbatteries with the potential for circuit integration. We have performed a preliminary study of the rf-magnetron sputtering of (1-x)Li 4 SiO 4 :xLi 3 PO 4 targets used to deposit amorphous thin-film electrolytes formed of the three-component system Li 2 O--SiO 2 --P 2 O 5 . Mass and optical emission spectroscopies have been used to investigate the effects of target composition and the deposition conditions upon the atomic and molecular species ejected from the targets. The data provide important information for understanding the mechanism of film formation and for monitoring the Li atomic flux onto the substrates during film growth. 5 refs., 7 figs., 1 tab

  11. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

    2016-01-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10"−"3 Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  12. Irreversible thermochromic response of RF sputtered nanocrystalline BaWO{sub 4} films for smart window applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, C.; Santhosh Kumar, T.; Pamu, D., E-mail: pamu@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati -781039 (India)

    2015-10-15

    We report irreversible thermochromic behaviour of BaWO{sub 4} (BWO) films for the first time. BWO films have been deposited at different substrate temperatures (RT, 200, 400, 600 and 800 °C) using RF magnetron sputtering in pure argon plasma. BWO films deposited at 800 °C exhibit crystalline nature. Also, BWO films deposited in the temperature range of 400 - 600 °C exhibit WO{sub 3} as a secondary phase and its weight percentage decreases with an increase in deposition temperature, whereas the films deposited at 800 °C exhibited pure tetragonal phase. FESEM images revealed that as the average particle sizes of the films are higher as compared with the thickness of the films and is explained based on Avrami type nucleation and growth. The transmittance of the films decreases with an increase in deposition temperature up to 600 °C and increases thereafter. Films deposited at 600 °C show ≤ 20% transmittance, looking at the films deposited at room temperature and 800 °C exhibits 90 and 70%, respectively. The refractive index and extinction coefficient of the films show profound dependence on crystallinity and packing density. The optical bandgap of BWO films increases significantly with an increase in O{sub 2}% during the deposition. The optical bandgap of the BWO films deposited at different temperatures in pure argon plasma, are in the range of 3.7 to 3.94 eV whereas the films deposited at 600 °C under different O{sub 2} plasma are in the range of 3.6 - 4.5 eV. The formations of colour centres are associated with the oxygen vacancies, which are clearly seen from the optical bandgap studies. The observed irreversible thermochromic behaviour in BWO films is attributed to the presence of oxygen vacancies that arises due to the electrons trapped at oxygen vacancies causing an inter valence charge transfer of W{sup 5+} to W{sup 6+} and is confirmed through the change in the optical density (ΔOD). Further, the Raman spectra are being used to

  13. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    International Nuclear Information System (INIS)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

  14. Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

  15. Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Gułkowski, Sławomir

    2017-10-01

    The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

  16. Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.

    2013-01-01

    ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted

  17. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, M.-C. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China); Chang, L.-S. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China)], E-mail: lschang@dragon.nchu.edu.tw; Lin, H.C. [Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, 106 Taipei, Taiwan (China)

    2008-03-30

    Titanium oxynitride (TiN{sub x}O{sub y}) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN{sub x}O{sub y} films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm{sup 2} to 7 W/cm{sup 2}. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN{sub x}O{sub y} films deposited at power densities above 4 W/cm{sup 2} show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN{sub x}O{sub y} films reach values as low as 0.98 g/m{sup 2}-day-atm and 0.60 cm{sup 3}/m{sup 2}-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al{sub 2}O{sub 3} barrier films. Therefore, TiN{sub x}O{sub y} films are potential candidates to be used as a gas permeation barrier for PET substrate.

  18. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper

  19. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  20. Third-order nonlinear optical response of colloidal gold nanoparticles prepared by sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castro, Hemerson P. S.; Alencar, Márcio A. R. C.; Hickmann, Jandir M. [Optics and Materials Group–OPTMA, Universidade Federal de Alagoas, CAIXA POSTAL 2051, 57061-970 Maceió (Brazil); Wender, Heberton [Brazilian Synchrotron National Laboratory (LNLS), CNPEM, Rua Giuseppe Máximo Scolfaro 10.000, 13083-970 Campinas (Brazil); Department of Physics, Universidade Federal do Mato Grosso do Sul, 79070-900, Campo Grande (Brazil); Teixeira, Sergio R. [Institute of Physics, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre (Brazil); Dupont, Jairton [Laboratory of Molecular Catalysis, Institute of Chemistry, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre (Brazil)

    2013-11-14

    The nonlinear optical responses of gold nanoparticles dispersed in castor oil produced by sputtering deposition were investigated, using the thermally managed Z-scan technique. Particles with spherical shape and 2.6 nm of average diameter were obtained and characterized by transmission electron microscopy and small angle X-ray scattering. This colloid was highly stable, without the presence of chemical impurities, neither stabilizers. It was observed that this system presents a large refractive third-order nonlinear response and a negligible nonlinear absorption. Moreover, the evaluation of the all-optical switching figures of merit demonstrated that the colloidal nanoparticles prepared by sputtering deposition have a good potential for the development of ultrafast photonic devices.

  1. On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cattaruzza, E., E-mail: cattaruz@unive.it [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Battaglin, G.; Riello, P. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Cristofori, D. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice and Centre for Electron Microscopy “Giovanni Stevanato”, Via Torino 155/B, 30172 Mestre-VE (Italy); Tamisari, M. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1, 44121 Ferrara (Italy)

    2014-11-30

    Highlights: • RuN thin films in the zinc-blende structure have been synthesized by rf-magnetron sputtering. • Contribute is given to the understanding of phase-formation mechanisms in systems that under ambient conditions present positive enthalpies of formation. • Contribute is given to the understanding of phenomena occurring during reactive sputtering processes. • Nanopillar structure: suitable for application requiring a high effective area, like sensing, catalysis, and electrode material for energy-storage devices. - Abstract: 4d- and 5d-transition metal nitrides are of interest both because of their importance for the understanding of mechanisms of phase formation in systems that under ambient conditions present positive enthalpies of formation and because of their appealing structural and electronic properties. In this study, we report the synthesis of thin films of ruthenium mononitride (RuN) in the zinc-blende structure by radio-frequency-magnetron sputtering. Films present a characteristic structure of packed columns ending with tetrahedral tips. The effect of changing the synthesis parameters was investigated in detail. It was found that RuN can be formed if the nitrogen partial pressure exceeds a minimum value and that the addition of argon has the major effect of increasing the deposition rate because of its higher sputter ability. Temperature plays an important role: if it is too high, decomposition/desorption effects overcome those leading to the formation of the compound. Phenomena resulting in the formation of RuN occur at the surface of the growing films and are related to the interactions of ruthenium with energetic nitrogen ions, or atoms, which can penetrate the first atomic layers by low energy implantation. Because of its properties and structure, this material is a promising candidate for applications like sensing, catalysis, and electrode material for energy-storage devices.

  2. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe{sub 100−x}Co{sub x}(001) thin films (x < 11)

    Energy Technology Data Exchange (ETDEWEB)

    Kusaoka, A.; Kimura, J.; Takahashi, Y., E-mail: takahasy@yz.yamagata-u.ac.jp; Inaba, N. [Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, Tokyo 110-8714 (Japan); Ohtake, M.; Futamoto, M. [Faculty of Science and Engineering, Chuo University, Tokyo 112-8551 (Japan)

    2015-05-07

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe{sub 100−x}Co{sub x} (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins.

  3. Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrode

    International Nuclear Information System (INIS)

    Wada, M.; Nakano, J.; Yanagawa, F.

    1985-01-01

    It is observed that strong rf sputtering of the Pb-alloy base electrodes causes the junctions to trap magnetic vortices and thus induces Josephson current (I/sub J/) suppression. Trapping begins to occur when the rf sputtering that removes the native thermal oxide on the base electrode is carried out prior to rf plasma oxidation. Observed large I/sub J/ suppression is presumably induced by the concentration of vortices into the sputtered area upon cooling the sample below the transition temperature. This suggests a new method of the circumvention of the vortex trapping by strongly rf sputtering the areas of the electrode other than the junction areas

  4. Improvement of the homogeneity of high mobility In{sub 2}O{sub 3}:H films by sputtering through a mesh electrode studied by Monte Carlo simulation and thin film analysis

    Energy Technology Data Exchange (ETDEWEB)

    Scherg-Kurmes, Harald; Hafez, Ahmad; Szyszka, Bernd [Technische Universitaet Berlin, Einsteinufer 25, 10587, Berlin (Germany); Siemers, Michael; Pflug, Andreas [Fraunhofer IST, Bienroder Weg 54E, 38108, Braunschweig (Germany); Schlatmann, Rutger [Helmholtz Zentrum Berlin, PVcomB, Schwarzschildstr. 3, 12489, Berlin (Germany); Rech, Bernd [Helmholtz Zentrum Berlin, Institute for Silicon Photovoltaics, Kekulestrasse 5, 12489, Berlin (Germany)

    2016-09-15

    Hydrogen-doped indium oxide (IOH) is a transparent conductive oxide offering great potential to optoelectronic applications because of its high mobility of over 100 cm{sup 2} V{sup -1}s{sup -1}. In films deposited statically by RF magnetron sputtering, a small area directly opposing the target center with a higher resistivity and lower crystallinity than the rest of the film has been found via hall- and XRD-measurements, which we attribute to plasma damage. In order to investigate the distribution of particle energies during the sputtering process we have simulated the RF-sputtering deposition process of IOH by particle-in-cell Monte Carlo (PICMC) simulation. At the surface of ceramic sputtering targets, negatively charged oxygen ions are created. These ions are accelerated toward the substrate in the plasma sheath with energies up to 150 eV. They damage the growing film and reduce its crystallinity. The influence of a negatively biased mesh inside the sputtering chamber on particle energies and distributions has been simulated and investigated. We found that the mesh decreased the high-energetic oxygen ion density at the substrate, thus enabling a more homogeneous IOH film growth. The theoretical results have been verified by XRD X-ray diffractometry (XRD), 4-point probe, and hall measurements of statically deposited IOH films on glass. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  6. Nylon-sputtered nanoparticles: fabrication and basic properties

    Science.gov (United States)

    Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

    2012-12-01

    Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

  7. Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by reactive DC/RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Barshilia, Harish C.; Selvakumar, N.; Rajam, K.S. [Surface Engineering Division, National Aerospace Laboratories, Bangalore 560 017 (India); Biswas, A. [Spectroscopy Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

    2008-11-15

    Spectrally selective TiAlN/AlON tandem absorbers were deposited on copper and stainless steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and thicknesses of the individual component layers were optimized to achieve high absorptance ({alpha}=0.931-0.942) and low emittance ({epsilon}=0.05-0.06) on copper substrate. The experimental spectroscopic ellipsometric data have been fitted with the theoretical models to derive the dispersion of the optical constants (n and k). In order to study the thermal stability of the tandem absorbers, they were subjected to heat treatment (in air and vacuum) for different durations and temperatures. The tandem absorber deposited on Cu substrates exhibited high solar selectivity ({alpha}/{epsilon}) of 0.946/0.07 even after heat treatment in air up to 600 C for 2 h. At 625 C, the solar selectivity decreased significantly on Cu substrates (e.g., {alpha}/{epsilon}=0.924/0.30). The tandem absorber on Cu substrates was also stable in air up to 100 h at 400 C with a solar selectivity of 0.919/0.06. Studies on the accelerated aging tests indicated that the activation energy for the degradation of the tandem absorber is of the order of 100 kJ/mol. (author)

  8. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  9. Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

    Science.gov (United States)

    Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

    2018-06-01

    This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

  10. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  11. Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

    Directory of Open Access Journals (Sweden)

    Nobuto Oka

    2015-10-01

    Full Text Available A process based on reactive gas flow sputtering (GFS for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO.

  12. InxGa1-xAs obtained from independent target via co-sputtering deposition

    International Nuclear Information System (INIS)

    Bernal-Correa, R; Torres-Jaramillo, S.; Pulzara-Mora, C.

    2017-01-01

    This paper is focused on the preparation of InGaAs thin films on GaAs substrates by r.f. magnetron sputtering technique, using the sputtering power as control means for the formation of different stoichiometries. Results of X-ray and Raman spectroscopy allowed corroborating the formation of In x Ga 1-x As in different concentrations, identifying peaks associated with crystallographic planes (X-rays) and characteristic vibrational phonon modes (Raman). An analysis performed with the Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS) techniques, allowed discussing on the composition in each of the layers. Finally, an alternative in obtaining the ternary semiconductor with polycrystalline structure and preferential growth along the direction (111) was demonstrated and generated by a technique different from the epitaxial techniques, which are commonly used for the growth of III-V semiconductors. (paper)

  13. Spectro-ellipsometric studies of sputtered amorphous Titanium dioxide thin films: simultaneous determination of refractive index, extinction coefficient, and void distribution

    CERN Document Server

    Lee, S I; Oh, S G

    1999-01-01

    Amorphous titanium dioxide thin films were deposited onto silicon substrates by using RF magnetron sputtering, and the index of refraction, the extinction coefficient, and the void distribution of these films were simultaneously determined from the analyses of there ellipsometric spectra. In particular, our novel strategy, which combines the merits of multi-sample fitting, the dual dispersion function, and grid search, was proven successful in determining optical constants over a wide energy range, including the energy region where the extinction coefficient was large. Moreover, we found that the void distribution was dependent on the deposition conditions, such as the sputtering power, the substrate temperature, and the substrate surface.

  14. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)], E-mail: susanamaria.fernandez@ciemat.es; Martinez-Steele, A.; Gandia, J.J. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala. Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2009-03-31

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 {sup o}C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 {sup o}C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10{sup -3} {omega} cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 {omega}{sup -1} cm{sup -1} vs 14,900 {omega}{sup -1} cm{sup -1}, respectively.

  15. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    International Nuclear Information System (INIS)

    Fernandez, S.; Martinez-Steele, A.; Gandia, J.J.; Naranjo, F.B.

    2009-01-01

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 o C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 o C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10 -3 Ω cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 Ω -1 cm -1 vs 14,900 Ω -1 cm -1 , respectively

  16. Preparation of YBaCuO superconducting tape by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Fukutomi, Masao; Akutsu, Nakao; Tanaka, Yoshiaki; Asano, Toshihisa; Maeda, Hiroshi (National Research Inst. for Metals, Tsukuba (Japan); Mitsui Mining and Smelting Co., Ltd., Tokyo (Japan))

    1989-04-01

    The effect of buffer layers, conditions of film preparation, and the relation between superconducting characteristics and bombardment of high energy ions on films were discussed in an attempt to fabricate YBaCuO films on metallic substrates by sputtering. Hastelloy-X tapes and Chromel (Ni-10Cr) fine wires were used as metallic substrates, and MgO films as buffer layers, which were provided by sputtering a MgO sintered target and annealing. As a result, superconducting films were favorably obtained on the Hastelloy tapes with the MgO buffer layers, however, counter diffusion at the interface of the film and layer was unavoidable in annealing. C axis-highly oriented film with high zero resistance Tc was obtained in such an arrangement of the target and substrate as to lower the effect of 0{sup {minus}} ion resputtering, resulting in the most favorable Tc=80.4K. YBaCuO superconducting films could be also deposited on a bundle of Chromel fine wires preliminarily. 11 refs., 7 figs.

  17. Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

    Energy Technology Data Exchange (ETDEWEB)

    Sagdeo, P R; Shinde, D D; Misal, J S [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam -530012 (India); Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C, E-mail: nksahoo@barc.gov.i, E-mail: sahoonk@gmail.co [Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2010-02-03

    Titania-silica (TiO{sub 2}/SiO{sub 2}) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser ({lambda} = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

  18. Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

    International Nuclear Information System (INIS)

    Sagdeo, P R; Shinde, D D; Misal, J S; Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C

    2010-01-01

    Titania-silica (TiO 2 /SiO 2 ) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

  19. Helium-Charged La-Ni-Al Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    Shi Liqun; Chen Deming; Xu Shilin; Liu Chaozhu; Hao Wanli; Zhou Zhuyin

    2005-01-01

    An advanced implantation of low energy helium-4 atoms during the La-Ni-Al film growth by adopting magnetron sputtering with Ar/He mixture gases is discussed. Both proton backscattering spectroscopy (PBS) and elastic recoil detection (ERD) analyses were adopted to measure helium concentration of the films and distribution in the near-surface region. Helium atoms with a high concentration incorporate evenly in deposited film. The introduction of the helium with no extra irradiation damage is expected by choosing suitable deposition conditions. It was found that amorphous and crystalline LaNi 5 -type structures can be achieved when sputtered with pure Ar and Ar/He mixture gases at room temperature, respectively. Thermal desorption experiments proposes that a part of hydrogen atoms are bound to trapped helium at crystal and releases together with helium. Only a small fraction of helium is released from the helium-vacancy clusters in lower temperature range and most of helium is released from small size helium bubbles in the high temperature range

  20. Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

    Directory of Open Access Journals (Sweden)

    P. Balashabadi

    2013-12-01

    Full Text Available A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.

  1. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  2. Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

    International Nuclear Information System (INIS)

    Islam, Mohammad; Inal, Osman T.

    2008-01-01

    Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

  3. Evaluation of target power supplies for krypton storage in sputter-deposited metals

    International Nuclear Information System (INIS)

    Greenwell, E.N.; McClanahan, E.D.; Moss, R.W.

    1986-04-01

    Implantation of 85 Kr in a growing sputtered metal deposit has been studied for the containment of 85 Kr recovered from the reprocessing of spent nuclear fuel. PNL, as part of DOE's research program for 85 Kr storage, has developed krypton trapping storage devices (KTSDs) in a range of sizes for ''cold'' and radioactive testing. The KTSD is a stainless steel canister that contains a sputtering target for depositing an amorphous rare-earth transition metal on the inner wall and simultaneously implanting low-energy krypton ions in the growing deposit. This report covers the design requirements for the target power supply and the description, testing and evaluation of three basic designs. The designs chosen for evaluation were: (1) a standard commercial power supply with an external PNL-designed current interrupter, (2) a commercially manufactured power supply with an integral series-type interrupter, and (3) a commercially manufactured power supply with an integral shunt-type interrupter. The units were compared on the basis of performance, reliability, and life-cycle cost. 8 refs., 9 figs., 2 tabs

  4. Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

    International Nuclear Information System (INIS)

    Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

    2010-01-01

    Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

  5. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China); Feng, Feng, E-mail: feng.feng@sz.tsinghua.edu.cn; Lu, Hongyuan [Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Qu, Timing; Zhu, Yuping [Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Huang, Rongxia [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  6. Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

    2015-10-15

    A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

  7. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  8. The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zubizarreta, C., E-mail: cristina.zubizarreta@tekniker.es [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); G-Berasategui, E.; Ciarsolo, I.; Barriga, J. [IK4-Tekniker, Research Centre, c/ Iñaki Goenaga, 5, 20600 Eibar, Guipuzkoa (Spain); Gaspar, D.; Martins, R.; Fortunato, E. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa (Portugal)

    2016-09-01

    Graphical abstract: - Highlights: • High quality AZO films deposited at low temperature by RF magnetron sputtering. • Transmittance values of 84% and resistivity of 1.9 × 10{sup −3} Ω cm were obtained. • Stable optoelectronic and structural properties during whole life of the target. • RF MS: robust and reliable for the industrial manufacture of AZO frontal electrode. - Abstract: Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

  9. Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

    International Nuclear Information System (INIS)

    Georgieva, V; Bogaerts, A; Saraiva, M; Depla, D; Jehanathan, N; Lebelev, O I

    2009-01-01

    Using a molecular dynamics model the crystallinity of Mg x Al y O z thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al 2 O 3 film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

  10. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  11. Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

    International Nuclear Information System (INIS)

    Gautron, E.; Buffière, M.; Harel, S.; Assmann, L.; Arzel, L.; Brohan, L.; Kessler, J.; Barreau, N.

    2013-01-01

    The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se 2 (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed

  12. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  13. Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Goto S.

    2015-06-01

    Full Text Available In sputtering deposition process of TiO2, metal Ti or sintered TiO2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO2 target was used, stoichiometric TiO2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm2. But, sintered TiO2 target is fragile and cannot endure higher density of input power than 3.4W/cm2. On the other hand, Ti target needs higher oxygen concentration (8% in sputtering gas atmosphere for obtaining rutile/anatase. Even though Ti target can be input twice power density of 7.9W/cm2, the highest deposition rate for Ti target was 1.4/nm, which was ~35% of the highest rate for TiO2 target. Then we have study out the composite target consisting of Ti plate and TiO2 chips. Using the composite target, stoichiometric TiO2 films were prepared in the rate of 9.6nm/min at 6.8 W/cm2 under the atmosphere of Ar/2.5%O2. Furthermore, we have found that the TiO2 films obtained from the composite target consisted of about 100% anatase, whereas TiO2 films obtained from other target have rutile dominant structure. The optical band gap energy of the film is determined by using the Tauc plot. The calculated band gap energies for the films deposited by Ti target and composite target were 2.95 and 3.24eV, which are equivalent to that of rutile and anatase structure, respectively.

  14. Carbon and tungsten effect on characteristics of sputtered and re-deposited beryllium target layers under deuteron bombardment

    International Nuclear Information System (INIS)

    Danelyan, L.S.; Gureev, V.M.; Elistratov, N.G.

    2004-01-01

    The behavior of the plasma facing Be-elements in the International Thermonuclear Experimental Reactor ITER will be affected by the re-deposition of other eroded plasma facing materials. The effect of carbon- and tungsten-additions on the microstructure, chemical composition and hydrogen isotope accumulation in the sputtered and re-deposited layers of beryllium TGP-56 at its interaction with 200 - 300 eV hydrogen isotope ions was studied in the MAGRAS facility equipped with a magnetron sputtering system. (author)

  15. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  16. Structural, optical and morphological properties of Ga1-xMnxAs thin films deposited by magnetron sputtering for spintronic device applications

    International Nuclear Information System (INIS)

    Bernal, M.E.; Dussan, A.; Mesa, F.

    2012-01-01

    In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (E g ), absorption coefficient (α), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.

  17. Growth behavior of rat bone marrow cells on RF magnetron sputtered hydroxyapatite and dicalcium pyrophosphate coatings.

    NARCIS (Netherlands)

    Yan, Y.; Wolke, J.G.C.; Ruijter, A. De; Yubao, L.; Jansen, J.A.

    2006-01-01

    The aim of this study was to evaluate the osteogenic properties of magnetron sputtered dicalcium pyrophaosphate (DCPP) and hydroxylapatite (HA) coatings. Therefore, DCPP and HA coatings were deposited on grit-blasted titanium discs. The substrates were used as-prepared or received an additional heat

  18. Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

    Science.gov (United States)

    Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

    2018-01-01

    Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

  19. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    O' Keefe, M.J.; Stutz, C.E.

    1997-07-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was {approximately}1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in {ge}1 GPa tensile increase in film stress.

  20. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    International Nuclear Information System (INIS)

    O'Keefe, M.J.; Stutz, C.E.

    1997-01-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was approximately1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in ge1 GPa tensile increase in film stress

  1. TiCx thin films coatings prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Saoula, N.; Handa, K.; Kesri, R.

    2004-01-01

    demonstrate clearly the great influence of the variation of different parameters (deposition time, RF power, total pressure, gas mixture (Ar+CH 4 ) on the film growth rates and thickness. The aim of present work is to study their influence of gas mixture, more specifically of carbon content on the structure, composition and the hardness of TiC coatings, prepared using an RF sputtering system

  2. Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Louring, S.; Madsen, N.D.; Berthelsen, A.N.; Christensen, B.H.; Almtoft, K.P.; Nielsen, L.P.; Bøttiger, J.

    2013-01-01

    Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

  3. Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

    Science.gov (United States)

    Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2012-02-01

    The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

  4. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  5. Magnetic field effects on coating deposition rate and surface morphology coatings using magnetron sputtering

    International Nuclear Information System (INIS)

    Yang, Yu-Sen; Huang, Wesley

    2010-01-01

    Chromium nitride coatings exhibit superior hardness, excellent wear and oxidation resistance, and are widely applied in the die and mold industries. The aim of this study was to investigate magnetic field effects on the deposition rate and surface morphology of chromium nitride coatings deposited by magnetron sputtering. Four types of magnetic field configurations, including the magnetron sputtering system, SNSN, SNNN, and intermediate magnetron modification, are discussed in this paper. SKD11 cold work die steel and a silicon (100) chip were used as substrates in the chromium nitride depositions. The process parameters, such as target current, substrate bias, and the distance between the substrate and target, are at fixed conditions, except for the magnetic arrangement type. The experimental results showed that the deposition rates of the four types of magnetic field configurations were 1.06, 1.38, 1.67 and 1.26 µm h −1 , respectively. In these cases, the SNNN type performs more than 58% faster than the unbalanced magnetron configuration does for the deposition rate. The surface morphology of chromium nitride films was also examined by SEM and is discussed in this paper

  6. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    International Nuclear Information System (INIS)

    Park, Yong Seob; Kim, Han-Ki

    2011-01-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  7. Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Vergara, L.; Galindo, R. Escobar; Martinez, R.; Sanchez, O.; Palacio, C.; Albella, J.M.

    2011-01-01

    The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

  8. Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

    2015-12-01

    Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

  9. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  10. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  11. High power pulsed magnetron sputtering: A method to increase deposition rate

    International Nuclear Information System (INIS)

    Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-01-01

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

  12. Advanced TiC/a-C : H nanocomposite coatings deposited by magnetron sputtering

    NARCIS (Netherlands)

    Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

    2006-01-01

    TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing

  13. Photocatalytic Activity of TiO2 Thin Films Obtained by the Sputtering RF in Wastewater

    Science.gov (United States)

    Cardona Bedoya, Jairo Armando; Sanchez Velandia, Wilmer Asmed; Delgado Rosero, Miguel Iban; Florido Cuellar, Alex Enrique; Zelaya Angel, Orlando; Mendoza Alvarez, Julio G.

    2011-03-01

    The photocatalytic activity of Ti O2 thin films in wastewater, under an UV irradiation, is studied. The films were prepared on corning glass substrates by the sputtering RF technique. We present evidence on the photocatalytic degradation, carried out by advanced oxidation processes (AOPs) in domestic wastewater pretreated with UASB (upflow anaerobic sludge blanket) reactors. Ti O2 films were illuminated with ultraviolet light during a time of 4 hours (λ ≅ 264 nm). We could see the effect of degraded operation in the absorbance measurement using UV-VIS spectrophotometry. The results show an increased rate of degradation of the wastewater by 30% compared to the values reflected biologically treated wastewater by anaerobic reactors.

  14. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  15. Molecular dynamics simulation of gold cluster growth during sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-05-14

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  16. Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

    International Nuclear Information System (INIS)

    Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

    2010-01-01

    In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

  17. Rhodium-coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; Temmermann, G. de; Oelhafen, P.; Mathys, D.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for plasma diagnostics that will be used in ITER. Any change in the mirror performance, in particular its reflectivity, will influence the quality and reliability of detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium may be a good candidate material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different relevant substrates (Mo, Stainless Steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness, crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch test results demonstrate that adhesion properties increase with the substrate hardness. The detailed optical characterizations of Rh coated mirrors as well as the results of erosion tests performed both under laboratory conditions and in TEXTOR will be presented in this paper. (orig.)

  18. Sputter deposition and characterisation of hard wear-resistant Ti/TiN multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Simmonds, M.C.; Swygenhoven, H. van [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Multilayered Ti/TiN thin films have been synthesized by magnetron sputter deposition. Alternating layers of Ti and TiN with layer thickness in the 5-50 nm range are sequentially deposited. The structure of the films have been characterised by atomic force microscopy (AFM), X-ray diffraction and reflection and Auger depth profiling. The mechanical properties have been investigated using pin-on-disc wear rate testing, nanoindentation determination of hardness and micro scratch testing. (author) 1 fig., 3 refs.

  19. Production and characterization of Si-N films obtained by r.f. magnetron sputtering

    International Nuclear Information System (INIS)

    Oliveira, A.; Cavaleiro, A.; Vieira, M.T.

    1993-01-01

    Si-N films were deposited by sputtering from an Si 3 N 4 target with different deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen content was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased films the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, particularly for biased films. Unbiased films were softer, which is attributed to the formation of silicon oxide and/or to a lower compressive stress level. (orig.)

  20. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  1. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  2. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  3. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  4. Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering

    International Nuclear Information System (INIS)

    Kim, J. S.; Park, J. K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T. Y.

    2012-01-01

    Zn-Sn-O (ZTO) films are known to be able to form an amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by using the conventional sputtering technique and, therefore, to have a potential to be applied as transparent thin film transistors. In this study, ZTO thin films were prepared by using combined sputtering of ZnO and SnO 2 targets, and the dependences of their electrical and optical properties on the composition and the deposition parameters were examined. The Sn content in the films was varied in the range of 35 ∼ 85 at .%. The deposition was carried out at room temperature, 150 and 300 .deg. C, and the oxygen content in sputtering gas was varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressures. ZTO films with Sn contents lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentrations. A high Hall mobility of larger than 10 cm 2 /Vs could be obtained in the carrier density range 10 17 ∼ 10 20 cm -3 , and the etching rate was measurable for films with Sn content up to 70 at.% when using a dilute HCl solution, indicating a good possibility of utilizing ZTO films for device applications.

  5. Structural and corrosive properties of ZrO2 thin films on zircaloy-4 by RF reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Soo Ho; Lee, Kwang Hoon; Ko, Jae Hwan; Yoon, Young Soo; Baek, Jong Hyuk; Lee, Sang Jin

    2006-01-01

    Zirconium-oxide (ZrO 2 ) thin films as protective layers were grown on a Zircaloy-4 (Z-4) cladding material as a substrate by RF reactive magnetron sputtering at room temperature. To investigate the effect of plasma immersion on the structural and the corrosive properties of the as-grown ZrO 2 thin film, we immersed Z-4 in plasma during the deposition process. X-ray diffraction (XRD) measurements showed that the as-grown ZrO 2 thin films immersed in plasma had cubic, well as monoclinic and tetragonal, phases whereas those immersed in the plasma had monoclinic and tetragonal phases only. Atomic force microscopy (AFM) measurements of the surface morphology showed that the surface roughness of the as-grown ZrO 2 thin films immersed in plasma was larger than that of the films not immersed in plasma. In addition, the corrosive property of the as-grown ZrO 2 thin films immersed in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the non-immersed films, the weight gains of the immersed films were larger. These results indicate that the ZrO 2 films immersed in plasma cannot protect Z-4 from corrosive phenomena.

  6. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  7. Impact of deposition rate on the structural and magnetic properties of sputtered Ni/Cu multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karpuz, Ali [Karamanoglu Mehmetbey Univ., Karaman (Turkey). Dept. of Physics; Colmekci, Salih; Kockar, Hakan; Kuru, Hilal; Uckun, Mehmet [Balikesir Univ. (Turkey). Dept. of Physics

    2018-04-01

    The structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, M{sub s}, values were 90 and 138 emu/cm{sup 3} for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, M{sub r}, values were also found to be 48 and 71 emu/cm{sup 3} for the low and high deposition rates, respectively. The coercivity, H{sub c}, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the H{sub c} values. The M{sub s}, M{sub r}, and H{sub c} values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

  8. Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-An [Department of Mechanical Engineering, National Central University, Taiwan (China); Lin, Jing-Chie, E-mail: jclincom@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Taiwan (China); Institute of Material Science and Engineering, National Central University, Taiwan (China); Chang, Yu-Fong [Department of Mechanical Engineering, National Central University, Taiwan (China); Chyou, San-Der [Power Research Institute, Taiwan Power Company, Taiwan (China); Peng, Kun-Cheng [Department of Materials Science and Engineering, Mingchi University of Technology, Taiwan (China)

    2012-06-01

    Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E{sub g}) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 Multiplication-Sign 10{sup -2} {Omega} cm to 3.29 Multiplication-Sign 10{sup -3} {Omega} cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV-visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier

  9. TiOx deposited by magnetron sputtering: a joint modelling and experimental study

    Science.gov (United States)

    Tonneau, R.; Moskovkin, P.; Pflug, A.; Lucas, S.

    2018-05-01

    This paper presents a 3D multiscale simulation approach to model magnetron reactive sputter deposition of TiOx⩽2 at various O2 inlets and its validation against experimental results. The simulation first involves the transport of sputtered material in a vacuum chamber by means of a three-dimensional direct simulation Monte Carlo (DSMC) technique. Second, the film growth at different positions on a 3D substrate is simulated using a kinetic Monte Carlo (kMC) method. When simulating the transport of species in the chamber, wall chemistry reactions are taken into account in order to get the proper content of the reactive species in the volume. Angular and energy distributions of particles are extracted from DSMC and used for film growth modelling by kMC. Along with the simulation, experimental deposition of TiOx coatings on silicon samples placed at different positions on a curved sample holder was performed. The experimental results are in agreement with the simulated ones. For a given coater, the plasma phase hysteresis behaviour, film composition and film morphology are predicted. The used methodology can be applied to any coater and any films. This paves the way to the elaboration of a virtual coater allowing a user to predict composition and morphology of films deposited in silico.

  10. Morphology and inhibition performance of Ag thin film as antimicrobial coating deposited by RF-PVD on 316 L stainless steel

    Science.gov (United States)

    Purniawan, A.; Khrisna, Y. S. A.; Rasyida, A.; Atmono, T. M.

    2018-04-01

    Foreign body related infection (FBRIs) is caused by forming biofilm of bacterial colony of medical equipment surfaces. In many cases, the FBRIs is still happened on the surface after medical sterilization process has been performed. In order to avoid the case, surface modification by antimicrobial coating was used. In this work, we present silver (Ag) thin film on 316 L stainless steel substrate surface was deposited using Radio Frequency Sputtering PVD (RF-PVD). The morphology of Ag thin film were characterized using SEM-EDX. Surface roughness of the thin film was measured by AFM. In addition, Kirby Bauer Test in Escherichia coli (E. coli) was conducted in order to evaluate the inhibition performance of the Ag thin film antimicrobial coating. Based on SEM and AFM results show that the particle size is increased from 523 nm to 708 nm and surface roughness from 9 to 20 nm for deposition time 10 minutes to 20 minutes, respectively. In addition, the inhibition layer of the coating is about 29 mm.

  11. Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

    Science.gov (United States)

    Müllerová, Jarmila; Šutta, Pavol; Medlín, Rostislav; Netrvalová, Marie; Novák, Petr

    2017-12-01

    In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of ZnTiO3 perovskite thin films deposited on glass by reactive magnetron co-sputtering. The members of the series differ by the titanium content that was revealed as an origin of the changes not only in structure but also in dispersive optical properties. Low porosity has been discovered and calculated using the Bruggeman effective medium approximation. An apparent blue-shift of the optical band gap energies with increasing titanium content was observed. The observed band gap engineering is a good prospective for eg optoelectronic and photocatalytic applications of ZnTiO3.

  12. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    International Nuclear Information System (INIS)

    Pinzón, M.J.; Alfonso, J.E.; Olaya, J.J.; Cubillos, G.I.; Romero, E.

    2014-01-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N 2 /O 2 , with a flow ratio ΦN 2 /ΦO 2 of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO 2 ) and body-centered cubic (Zr 2 ON 2 ). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films

  13. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pinzón, M.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cubillos, G.I.; Romero, E. [Grupo de Materiales y Procesos Químicos, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2014-12-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N{sub 2}/O{sub 2}, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO{sub 2}) and body-centered cubic (Zr{sub 2}ON{sub 2}). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films.

  14. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  15. Effect of Ti Doping to Maintain Structural Disorder in InOx-Based Thin-Film Transistors Fabricated by RF Magnetron Sputtering

    Science.gov (United States)

    Aikawa, Shinya

    2017-12-01

    The effect of Ti doping in an indium oxide (InOx)-based semiconductor is investigated for the thin-film transistor (TFT) property and crystal structure of the film. InOx and Ti-doped InOx (InTiOx) films deposited by RF magnetron sputtering under the same O2 partial pressure conditions were systematically compared. The TFT behavior of the InOx showed higher conductivity than that of the InTiOx and was drastically changed to metallic conduction after annealing at 150 °C. Under the annealing conditions when the electrical transition to the metallic behavior occurred, the InOx film was crystallized. The X-ray diffraction analysis revealed that the shrinkage of the In2O3 unit cell is pronounced in the case of InOx films. Thus, Ti dopants may play the role as a suppressor for shrinkage of the unit cell, i.e. maintaining neighboring In-In distances, in addition to suppression of oxygen vacancies. The In-In distance, which is related to the overlapping of In 5 s orbitals, is considered to be one of the key factor for which InOx-based materials are utilized as conducting films or semiconducting channels.

  16. Study on the preparation of boron-rich film by magnetron sputtering in oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Zhangmin; Yang, Yiming; Huang, Jian; Ren, Bing; Yu, Hongze; Xu, Run; Ji, Huanhuan; Wang, Lin; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • Boron ({sup 10}B) oxide films were successfully grown using RF magnetron sputtering. • Effects of oxygen partial pressure on the property of the films were studied. • Substrates were covered with B-rich film and film surface was covered with B{sub 2}O{sub 3}. • The growth mechanism of films in oxygen atmosphere was analyzed using XPS. - Abstract: In this paper, the growth of boron ({sup 10}B) oxide films on (1 0 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B{sub 2}O{sub 3}. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.

  17. Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

    Science.gov (United States)

    Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

    2015-04-01

    The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

  18. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Mujika, M.; Arana, S.; Castano, E.

    2007-01-01

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  19. Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux

    International Nuclear Information System (INIS)

    Bogaerts, Annemie; Okhrimovskyy, Andriy; Baguer, Neyda; Gijbels, Renaat

    2005-01-01

    A model is developed for a cylindrical hollow cathode discharge (HCD), with an axial gas flow (entering through a hole in the cathode bottom). The model combines a commercial computational fluid dynamics program 'FLUENT' to compute the gas flow, with home-developed Monte Carlo and fluid models for the plasma behaviour. In this paper, we focus on the behaviour of the sputtered atoms, and we investigate how the gas flow affects the sputtered atom density profiles and the fluxes, which is important for sputter deposition. The sputtered atom density profiles are not much affected by the gas flow. The flux, on the other hand, is found to be significantly enhanced by the gas flow, but in the present set-up it is far from uniform in the radial direction at the open end of the HCD, where a substrate for deposition could be located

  20. Characterization of high quality Cu(In,Ga)Se{sub 2} thin films prepared by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bouchama, Idris [Departement d' Electronique, Faculte de Technologie, Universite de Msila (Algeria); Djessas, Kamal [Laboratoire Procedes Materiaux et Energie Solaire, PROMES-CNRS, Rambla de la Thermodynamique, Technosud, 66100 Perpignan (France); Bouloufa, Abdeslam [Laboratoire d' Electrochimie et Materiaux, Universite Ferhat Abbas de Setif (Algeria); Gauffier, Jean-Luc [Departement de Physique, INSA de Toulouse, 135, Avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

    2013-01-15

    This paper reports the production of high quality polycrystalline thin layers of CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} (CIGS), using rf-magnetron sputtering, from a powder target. These films are designed to be used as absorbers in solar cells. The depositions were carried out at substrate temperatures below 250 C and glass substrates was used. The influence of the substrate temperatures on the crystalline quality as well as structural, optical and electrical properties of thin layers obtained has been studied. X-ray diffraction showed that the films were highly orientated in the (112) and/or (204)/(220) direction. In{sub 2}Se{sub 3} secondary phase was observed on the samples grown at lower substrate temperatures. The surface morphology of CIGS layers studied by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) has been also discussed. The most surprising and exciting outcome of this study was that the as grown films were of near stoichiometric composition. Resistivity measurements were carried out using the four point probe method. The optical absorption showed that energy gap values are between 1.13 and 1.18 eV and rather sharp absorption fronts. Thin film resistivities are between 10.7 and 60.9 {Omega}.cm depending on the experimental growth conditions (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. In vitro behaviour of nanocrystalline silver-sputtered thin films

    International Nuclear Information System (INIS)

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  2. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-01-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  3. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  4. Hydroxyapatite thin films synthesized by pulsed laser deposition and magnetron sputtering on PMMA substrates for medical applications

    International Nuclear Information System (INIS)

    Socol, G.; Macovei, A.M.; Miroiu, F.; Stefan, N.; Duta, L.; Dorcioman, G.; Mihailescu, I.N.; Petrescu, S.M.; Stan, G.E.; Marcov, D.A.; Chiriac, A.; Poeata, I.

    2010-01-01

    Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates - used as cranio-spinal implant-type structures - by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4-2.75 J/cm 2 , pressures of 30-46.66 Pa and 10 Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3 Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4 J/cm 2 , reduced pressure of water vapours and a 100 o C/4 h thermal treatment. For MS, the best results were obtained for 80% Ar + 20% O 2 reactive atmosphere at low RF power (∼75 W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells.

  5. Structural and optical properties of electro-optic material. Sputtered (Ba,Sr)TiO3

    International Nuclear Information System (INIS)

    Suzuki, Masato; Xu, Zhimou; Tanushi, Yuichiro; Yokoyama, Shin

    2006-01-01

    In order to develop a novel ring resonator optical switch, we have studied the structural and optical properties of the electro-optic material (Ba,Sr)TiO 3 (BST) deposited by RF sputtering on a SiO 2 cladding layer (1.0 μm). The crystallinity of the BST films is evaluated by X-ray diffraction and the optical propagation loss of the waveguides is measured using a He-Ne laser. As a result, it is found that there is a strong relationship between the optical propagation loss and crystallinity of the sputtered film. It is suggested that the propagating light is influenced by the crystal property, for example, the grain size and density of the polycrystalline BST film. (author)

  6. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    Science.gov (United States)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  7. Exchange interaction in MnPt/FeCo sputtered multilayers

    International Nuclear Information System (INIS)

    Honda, S.; Nawate, M.; Norikane, T.

    2000-01-01

    MnPt single-layer films have been prepared on glass substrates by RF magnetron sputtering for studying the composition dependencies of resistivity and crystalline structure. In the as-deposited state, the resistivity increases with Mn content and reaches the maximum at 69 at%. By annealing, the resistivity of the films having the Mn content around 51 at% increases, closely relating to the growth of the ordered CuAu FCT-type MnPt crystals. For the both film structures of the glass/Cu/FeCo/MnPt/Cu and the glass/MnPt/FeCo/Cu, which have been sputter-deposited on glass substrates, the exchange interaction between MnPt and FeCo layers, and the coercivity of the FeCo layer have been examined as functions of the Mn content, the layer thickness and the annealing temperature. In the as-deposited state, the exchange field (H ex ) is nearly zero up to 75 at% of Mn content, above which the value of H ex increases and shows the maximum at 85 at%, in which the blocking temperature is about 100 deg. C. By annealing, the value of H ex increases for the films of Mn content around 40-60 at%, exhibiting the higher blocking temperature than 360 deg. C. The temperature stability has also been examined using the Rutherford backscattering spectrometry

  8. Study on the preheating duration of Cu{sub 2}SnS{sub 3} thin films using RF magnetron sputtering technique for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuchen; He, Jun; Li, Xinran; Chen, Ye; Sun, Lin, E-mail: lsun@ee.ecnu.edu.cn; Yang, Pingxiong; Chu, Junhao

    2016-04-25

    Cu{sub 2}SnS{sub 3} (CTS) thin films are prepared by sulfurization the stacked metallic precursors deposited by raido-frequency magnetron sputtering method on molybdenum-coated soda lime glass substrates. The details of sulfurization process and the effect of preheating duration on the properties of CTS thin films have been investigated. It is found that the content of element tin strongly depend on the preheating duration. X-ray diffraction patterns identify that the CTS thin films exhibit the monoclinic structure. Raman scattering spectra make a further confirmation for the crystal structure. Fourier transform infrared reflectance spectroscopy (FTIR) is first used to study the properties of CTS thin films. The assigned active modes in Raman scattering spectra is consistent with the analysis in FTIR. Morphology analysis reveals long preheating duration would make the quality of films deteriorate. The thin film solar cell (TFSC) fabricated using the CTS absorber layer synthesized at preheating duration of 15 min shows that a power conversion efficiency up to 0.76% for a 0.19 cm{sup 2} area. The electrical characterization of CTS TFSC is first studied by electrochemical impedance spectroscopy, which implies the existence of MoS{sub x} and defects in the CTS/CdS interface. - Highlights: • CTS thin films and solar cells prepared by RF magnetron sputtering. • Preheating duration is a critical way to remain the Sn content in CTS thin film. • XRD, Raman, FTIR and XPS confirmed the single phase of CTS thin film. • The device characterization of CTS solar cell has been systematically investigated.

  9. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    International Nuclear Information System (INIS)

    Ahumada-Lazo, R.; Torres-Martínez, L.M.; Ruíz-Gómez, M.A.; Vega-Becerra, O.E.

    2014-01-01

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media

  10. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  11. Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, A. [Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.in [Defense Metallurgical Research Laboratory, Hyderabad 500058 (India); Prabahar, K.; Kumar, Atul [Defense Metallurgical Research Laboratory, Hyderabad 500058 (India); Kannan, M.D.; Jayakumar, S. [Department of Physics, PSG College of Technology, Coimbatore 641004 (India)

    2011-11-15

    The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 deg. C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm{sup 3} and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature. - Highlights: > Compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. > Annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. > The highest Curie transition in the films was observed at 365 K. > The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.

  12. Niobium-based catalysts prepared by reactive radio-frequency magnetron sputtering and arc plasma methods as non-noble metal cathode catalysts for polymer electrolyte fuel cells

    International Nuclear Information System (INIS)

    Ohnishi, Ryohji; Katayama, Masao; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

    2010-01-01

    Two vacuum methods, reactive radio-frequency (RF) magnetron sputtering and arc plasma deposition, were used to prepare niobium-based catalysts for an oxygen reduction reaction (ORR) as non-noble metal cathodes for polymer electrode fuel cells (PEFCs). Thin films with various N and O contents, denoted as NbO x and Nb-O-N, were prepared on glassy carbon plates by RF magnetron sputtering with controlled partial pressures of oxygen and nitrogen. Electrochemical measurements indicated that the introduction of the nitrogen species into the thin film resulted in improved ORR activity compared to the oxide-only film. Using an arc plasma method, niobium was deposited on highly oriented pyrolytic graphite (HOPG) substrates, and the sub-nanoscale surface morphology of the deposited particles was investigated using scanning tunneling microscopy (STM). To prepare practical cathode catalysts, niobium was deposited on carbon black (CB) powders by arc plasma method. STM and transmission electron microscopy observations of samples on HOPG and CB indicated that the prepared catalysts were highly dispersed at the atomic level. The onset potential of oxygen reduction on Nb-O-N/CB was 0.86 V vs. a reversible hydrogen electrode, and the apparent current density was drastically improved by the introduction of nitrogen.

  13. Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

    International Nuclear Information System (INIS)

    Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

    2017-01-01

    Highlights: • TiO 2 films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO 2 coated 304L are higher than those obtained for uncoated substrate. • TiO 2 films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO 2 thin films for biomaterials applications. The TiO 2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O 2 gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO 2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO 2 films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties

  14. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  15. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  16. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology of the c......The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...... sweep voltammetry, impedance measurements. The microstructure and surface morphology of the coating were similar irrespective of the nature of the substrate, while the photocatalytic behaviour was found to vary depending on the substrate type. In general the TiO2 coating on stainless steel was shown...

  17. Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

    International Nuclear Information System (INIS)

    Essafti, A.; Abouelaoualim, A.; Fierro, J.L.G.; Ech-chamikh, E.

    2009-01-01

    Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm 3 with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.

  18. Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feijoo, P.C., E-mail: pedronska@fis.ucm.es [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Pampillón, M.A.; San Andrés, E. [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Fierro, J.L.G. [Instituto de Catálisis y Petroleoquímica, Consejo Superior de Investigaciones Científicas, C/Marie Curie 2, E-28049 Cantoblanco (Spain)

    2015-10-30

    In this work we use the high pressure sputtering technique to deposit the high permittivity dielectric gadolinium scandate on silicon substrates. This nonconventional deposition technique prevents substrate damage and allows for growth of ternary compounds with controlled composition. Two different approaches were assessed: the first one consists of depositing the material directly from a stoichiometric GdScO{sub 3} target; in the second one, we anneal a nano-laminate of < 0.5 nm thick Gd{sub 2}O{sub 3} and Sc{sub 2}O{sub 3} films in order to control the composition of the scandate. Metal–insulator–semiconductor capacitors were fabricated with platinum gates for electrical characterization. Accordingly, we grew a Gd-rich Gd{sub 2−x}Sc{sub x}O{sub 3} film that, in spite of higher leakage currents, presents a better effective relative permittivity of 21 and lower density of defects. - Highlights: • GdScO is deposited on Si as a high permittivity dielectric by two procedures. • Films sputtered from GdScO{sub 3} target are Sc-rich and present thick interface SiO{sub x}. • Gd-rich GdScO is obtained from a nano-laminate sputtered from Sc{sub 2}O{sub 3} and Gd{sub 2}O{sub 3}. • Gd{sub 1.8}Sc{sub 0.2}O{sub 3} shows good effective permittivity and electrical properties.

  19. Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

    International Nuclear Information System (INIS)

    Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

    2010-01-01

    A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

  20. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  1. Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

    International Nuclear Information System (INIS)

    Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

    2015-01-01

    We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

  2. Direct sputtering- and electro-deposition of gold coating onto the closed surface of ultralow-density carbon-hydrogen foam cylinder

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Jiaqiu; Yin, Jialing; Zhang, Hao; Yao, Mengqi; Hu, Wencheng, E-mail: huwc@uestc.edu.cn

    2016-12-15

    Highlights: • The surface pores of P(DVB/St) foam cylinder are sealed by CVD method. • Gold film was deposited on the surface of foam cylinder by magnetron sputtering. • Electroless plating was excluded in the present experiments. • The gold coatings were thickened through the electrodeposition process. - Abstract: This work aimed to fabricate a gold coating on the surface of ultralow-density carbon-hydrogen foam cylinder without electroless plating. Poly (divinylbenzene/styrene) foam cylinder was synthetized by high internal phase emulsion, and chemical vapor deposition polymerization approach was used to form a compact poly-p-xylylene film on the foam cylinder. Conducting gold thin films were directly deposited onto the poly-p-xylylene-modified foam cylinder by magnetron sputtering, and electrochemical deposition was adopted to thicken the gold coatings. The micro-structures and morphologies of poly (divinylbenzene/styrene) foam cylinder and gold coating were observed by field-emission scanning electron microscopy. The gold coating content was investigated by energy-dispersive X-ray. The thicknesses of poly-p-xylylene coating and sputtered gold thin-film were approximately 500 and 100 nm, respectively. After electrochemical deposition, the thickness of gold coating increased to 522 nm, and the gold coating achieved a compact and uniform structure.

  3. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  4. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  5. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    Science.gov (United States)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  6. A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

    Science.gov (United States)

    Broadway, David

    2015-01-01

    The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

  7. A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

    Science.gov (United States)

    Broadway, David; Ramsey, Brian; Gubarev, Mikhail

    2014-01-01

    The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

  8. Fabrication of black-gold coatings by glancing angle deposition with sputtering

    Directory of Open Access Journals (Sweden)

    Alan Vitrey

    2017-02-01

    Full Text Available The fabrication of black-gold coatings using sputtering is reported here. Glancing angle deposition with a rotating substrate is needed to obtain vertical nanostructures. Enhanced light absorption is obtained in the samples prepared in the ballistic regime with high tilt angles. Under these conditions the diameter distribution of the nanostructures is centered at about 60 nm and the standard deviation is large enough to obtain black-metal behavior in the visible range.

  9. Photoluminescence and charge-transport characteristics of nano-columnar titanium dioxide films prepared by rf-sputtering on alumina templates

    Science.gov (United States)

    Kheirandish, E.; Hosseini, T.; Yavarishad, N.; King, S.; Kouklin, N.

    2018-02-01

    The current study presents the synthesis and characterization of poly-crystalline TiO2 thin-film prepared by rf-sputtering on top of a highly regimented nanoporous Au-coated Al2O3 substrate. The film’s physical and electronic properties were characterized via SEM, EDS, x-ray diffraction and RAMAN spectroscopy as well as temperature dependent photoluminescence (PL) and I-V measurements. The films feature a 1D, columnar-like structure and exhibit a medium strength, spectrally-broad light emission in the UV-visible range. PL emission shows a weak T-dependence and is attributed to interband electronic transitions and defect-assisted radiative recombinations. The charge transport is confirmed to be polaronic in nature with both thermally-assisted hopping and quantum mechanical tunneling regulating a charge flow within the columns in the intermediate temperature regime of ˜200-320 K. These results open a door to utilizing nano-textured substrates/scaffolds to produce electronic-grade anatase TiO2 by sputtering for advanced opto-electronic device applications.

  10. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  11. Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

    2006-01-01

    The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

  12. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  13. Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2008-01-01

    Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

  14. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

    2017-04-01

    Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

  15. Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

    Science.gov (United States)

    Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

    2013-05-10

    Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

  16. Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications

    Science.gov (United States)

    Park, Seon-Yeong; Choe, Han-Cheol

    2018-02-01

    In this study, Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetrons sputtering for dental applications were studied using different experimental techniques. Mn coating films were formed on Ti-29Nb-xHf alloys by a radio frequency magnetron sputtering technique for 0, 1, 3, and 5 min at 45 W. The microstructure, composition, and phase structure of the coated alloys were examined by optical microscopy, field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The microstructure of Ti-29Nb alloy showed α" phase in the needle-like structure and Ti-29Nb-15Hf alloy showed β phase in the equiaxed structure. As the sputtering time increased, the circular particles of Mn coatings on the Ti-29Nb alloy increased at inside and outside surfaces. As the sputtering time increased, [Mn + Ca/P] ratio of the plasma electrolytic oxidized films in Ti- 29Nb-xHf alloys increased. The corrosion potential (Ecorr) of Mn coatings on the Ti-29Nb alloy showed higher than that of Mn coatings on the Ti-29Nb-15Hf alloy. The passive current density (Ipass) of the Mn coating on the Ti-29Nb alloy and Mn coatings on the Ti-29Nb-15Hf alloy was less noble than the non-Mn coated Ti-29Nb and Ti-29Nb-15Hf alloys surface.

  17. Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Auger, M. A.; Vazquez, L.; Sanchez, O.; Cuerno, R.; Castro, M.; Jergel, M.

    2006-01-01

    We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values α loc =1.0 and β loc =0.39, and global exponent values α=1.7 and β=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering

  18. Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

    Science.gov (United States)

    Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

    2015-04-01

    In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

  19. RF magnetron sputtered TiNiCu shape memory alloy thin film

    International Nuclear Information System (INIS)

    Fu Yongqing; Du Hejun

    2003-01-01

    Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

  20. Formation of metal nanoparticles by short-distance sputter deposition in a reactive ion etching chamber

    International Nuclear Information System (INIS)

    Nie Min; Meng, Dennis Desheng; Sun Kai

    2009-01-01

    A new method is reported to form metal nanoparticles by sputter deposition inside a reactive ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are found to be affected by the distance, the ion concentration, and the sputtering time. Densely distributed nanoparticles of various compositions were fabricated on the substrates that were kept at a distance of 130 μm or smaller from the target. When the distance was increased to 510 μm, island structures were formed, indicating the tendency to form continuous thin film with longer distance. The observed trend for nanoparticle formation is opposite to the previously reported mechanism for the formation of nanoparticles by sputtering. A new mechanism based on the seeding effect of the substrate is proposed to interpret the experimental results.