WorldWideScience

Sample records for rf power deposition

  1. High power RF window deposition apparatus, method, and device

    Science.gov (United States)

    Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

    2017-07-04

    A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

  2. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  3. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  4. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  5. Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hsu Cheng-Shing; Huang Cheng-Liang

    2001-01-01

    Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

  6. Simulation of spatially dependent excitation rates and power deposition in RF discharges for plasma processing

    International Nuclear Information System (INIS)

    Kushner, M.J.; Anderson, H.M.; Hargis, P.J.

    1985-01-01

    In low pressure, radio frequency (RF) discharges of the type used in plasma processing of semiconductor materials, the rate of electron impact excitation and energy transfer processes depends upon both the phase of the RF excitation and position in the discharge. Electron impact collisions create radicals that diffuse or drift to the surfaces of interest where they are adsorbed or otherwise react. To the extent that these radicals have a finite lifetime, their transport time from point of creation to surface of interest is an important parameter. The spatial dependence of the rate of the initial electron impact collisions is therefore also an important parameter. The power that sustains the discharge is coupled into the system by two mechanisms: a high energy e-beam component of the electron distribution resulting from electrons falling through or being accelerated by the sheaths, and by joule heating in the body of the plasma. In this paper, the authors discuss the spatial dependence of excitation rates and the method of power deposition iin RF discharges of the type used for plasma processing

  7. Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

    2016-12-15

    Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

  8. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  9. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  10. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-01-01

    In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

  11. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing, E-mail: hezhibing802@163.com

    2016-03-15

    Graphical abstract: - Highlights: • The growth mechanism of defects in GDP films was studied upon plasma diagnosis. • Increasing rf power enhanced the etching effects of smaller-mass species. • The “void” defect was caused by high energy hydrocarbons bombardment on the surface. • The surface roughness was only 12.76 nm, and no “void” defect was observed at 30 W. - Abstract: The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T{sub 2}B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no “void” defect was observed.

  13. Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tomoya, E-mail: tomoya@ecei.tohoku.ac.jp; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-04-30

    Vanadium (V) doped ZnO (VZO) thin films were deposited on flexible polymer and quartz substrates by RF magnetron sputtering, and influences of deposition parameters of V concentration, RF power and growth temperature on resistivity, transmittance and crystallinity were investigated. For the polymer substrates, both a high heat-resistant polycarbonate (PC) film and a functional-layer-coated PC film were adopted. The resistivity decreased gradually but the transmittance was worsened with increasing V concentration. Low RF power and high growth temperature improved both transparency and conductivity. By over-coating of the functional layers, c-axis orientation was deteriorated while low-resistivity and high-transmittance characteristics were achieved. Resistivity and average visible-transmittance (wavelength = 450–800 nm) of VZO films on untreated PC and over-coated PC substrates were 0.98 mΩ cm and 83.7%, and 1.2 mΩ cm and 80.3%, respectively, at V concentration of 2 at.%, RF power of 100 W and growth temperature of 175 °C. VZO films on the polymer substrates had slightly high resistivity but nearly the same optical transmittance, compared to those on quartz, under the identical deposition parameters. These results indicate that good electrical and optical properties can be achieved for the VZO films on PC substrate. - Highlights: • V-doped ZnO (VZO) was deposited on polymer substrate. • Effects of V concentration, RF power and growth temperature were investigated. • Resistivity decreased gradually with increasing V concentration. • Low RF power was suitable to obtain low resistivity and high transmittance. • High growth temperature improved both transparency and conductivity.

  14. Influence of RF power on the properties of sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-07-15

    Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Radiofrequency power deposition during magnetic resonance diagnostic examinations

    International Nuclear Information System (INIS)

    Grandolfo, M.; Vecchia, P.

    1988-01-01

    Magnetic Resonance Imaging and Spectroscopy (MRI, MRS) require that subjects be exposed to radiofrequency field, and the corresponding energy absorption leads to tissue heating. The main question, thus, to be considered in connection to safety and health aspects is related to the specific absorption rate (SAR) in the imaged subject and the exposure durations which might put a practical limit on the pulse sequence which can be used. In this paper some models and experimental results for radiofrequency power deposition in MRI and MRS machines are reviewed. Models show that energy dissipation is a function of the frequency, RF incident power density, exposure duration, coupling between the RF coil and the subject, and several properties of the exposed tissue, including conductivity, dielectric constant, specific gravity, size, and orientation relative to the field polarization. The ability of the body's normal thermoregulatory responses to cope with high levels of RF energy deposition must be also taken into account

  16. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  17. Characteristic performance of radio-frequency(RF) plasma heating using inverter RF power supplies

    International Nuclear Information System (INIS)

    Imai, Takahiro; Uesugi, Yoshihiko; Takamura, Shuichi; Sawada, Hiroyuki; Hattori, Norifumi

    2000-01-01

    High heat flux plasma are produced by high powe (∼14 kW) ICRF heating using inverter power supplies in the linear divertor simulator NAGDIS-II. The power flow of radiated rf power is investigated by a calorimetric method. Conventional power calculation using antenna voltage and current gives that about 70% of the rf power is radiated into the plasma. But increase of the heat load at the target and anode is about 10% of the rf power. Through this experiment, we find that about half of the rf power is lost at the antenna surface through the formation of rf induced sheath. And about 30% of the power is lost into the vacuum vessel through the charge exchange and elastic collision of ions with neutrals. (author)

  18. Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

    International Nuclear Information System (INIS)

    Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

    2012-01-01

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

  19. Review of pulsed rf power generation

    International Nuclear Information System (INIS)

    Lavine, T.L.

    1992-04-01

    I am going to talk about pulsed high-power rf generation for normal-conducting electron and positron linacs suitable for applications to high-energy physics in the Next Linear Collider, or NLC. The talk will cover some basic rf system design issues, klystrons and other microwave power sources, rf pulse-compression devices, and test facilities for system-integration studies

  20. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

    2006-01-01

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

  1. New developments in RF power sources

    International Nuclear Information System (INIS)

    Miller, R.H.

    1994-06-01

    The most challenging rf source requirements for high-energy accelerators presently being studied or designed come from the various electron-positron linear collider studies. All of these studies except TESLA (the superconducting entry in the field) have specified rf sources with much higher peak powers than any existing tubes at comparable high frequencies. While circular machines do not, in general, require high peak power, the very high luminosity electron-positron rings presently being designed as B factories require prodigious total average rf power. In this age of energy conservation, this puts a high priority on high efficiency for the rf sources. Both modulating anodes and depressed collectors are being investigated in the quest for high efficiency at varying output powers

  2. Dependence of RF power on the content and configuration of hydrogen in amorphous hydrogenated silicon by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Ushita, K; Mogi, K; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Infrared absorption spectra at stretching bands of Si-H were investigated in hydrogenated amorphous silicon fabricated by reactive sputtering in the atmosphere of Ar and H/sub 2/ (10 mole%) at various input rf powers in the range from 0.8 to 3.8 W/cm/sup 2/. Hydrogen content mainly due to the configuration of Si=H/sub 2/ in the film increased with the decreasing rf power, as the deposition rate was decreased. On the other hand, the quantity of the monohydride (Si-H) configuration depended less on the power. Attachment of hydrogen molecules onto the fresh and reactive surface of silicon deposited successively was proposed for possible process of hydrogen incusion into amorphous silicon resulting in Si=H/sub 2/ configuration. The photoconductivity increased as the input power became higher, when the deposition rate also increased linearly with the power.

  3. High RF Power Production for CLIC

    CERN Document Server

    Syratchev, I; Adli, E; Taborelli, M

    2007-01-01

    The CLIC Power Extraction and Transfer Structure (PETS) is a passive microwave device in which bunches of the drive beam interact with the impedance of the periodically loaded waveguide and excite preferentially the synchronous mode. The RF power produced (several hundred MW) is collected at the downstream end of the structure by means of the Power Extractor and delivered to the main linac structure. The PETS geometry is a result of multiple compromises between beam stability and main linac RF power needs. Another requirement is to provide local RF power termination in case of accelerating structure failure (ON/OFF capability). Surface electric and magnetic fields, power extraction method, HOM damping, ON/OFF capability and fabrication technology were all evaluated to provide a reliable design

  4. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-05-01

    This paper covers RF power sources for accelerator applications. The approach has been with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. This paper is confined to electron-positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. 11 refs., 13 figs

  5. Negative ion mass spectra and particulate formation in rf silane plasma deposition experiments

    International Nuclear Information System (INIS)

    Howling, A.A.; Dorier, J.L.; Hollenstein, C.

    1992-09-01

    Negative ions have been clearly identified in silane rf plasmas used for the deposition of amorphous silicon. Mass spectra were measured for monosilicon up to pentasilicon negative ion radical groups in power-modulated plasmas by means of a mass spectrometer mounted just outside the glow region. Negative ions were only observed over a limited range of power modulation frequency which corresponds to particle-free conditions. The importance of negative ions regarding particulate formation is demonstrated and commented upon. (author) 3 figs., 19 refs

  6. Design of an RF Antenna for a Large-Bore, High Power, Steady State Plasma Processing Chamber for Material Separation

    International Nuclear Information System (INIS)

    Rasmussen, D.A.; Freeman, R.L.

    2001-01-01

    The purpose of this Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC, (Contractor), and Archimedes Technology Group, (Participant) is to evaluate the design of an RF antenna for a large-bore, high power, steady state plasma processing chamber for material separation. Criteria for optimization will be to maximize the power deposition in the plasma while operating at acceptable voltages and currents in the antenna structure. The project objectives are to evaluate the design of an RF antenna for a large-bore, high power, steady state plasma processing chamber for material separation. Criteria for optimization will be to maximize the power deposition in the plasma while operating at acceptable voltages and currents in the antenna structure

  7. Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Sahoo, A.K.; Liu, C.Y.

    2015-12-01

    The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50 W, 60 W and 70 W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70 W power deposited a-IGZO film. It was 6° for the 60 W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25 ms and 2.96 ms, respectively. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment control cell. - Highlights: • Radio-frequency power of indium gallium zinc oxide film deposition was studied. • The oblique deposition technique was used to prepare the alignment layers. • The liquid crystal pretilt angle was about 13° using 70 W. • The corresponding liquid crystal cells exhibited fast response time at 4.21 ms. • The cells showed low threshold voltage of 1.78 V and excellent contrast ratio.

  8. RF characterization and testing of ridge waveguide transitions for RF power couplers

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rajesh; Jose, Mentes; Singh, G.N. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Girish [Department of Electrical Engineering, IIT Bombay, Mumbai 400076,India (India); Bhagwat, P.V. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2016-12-01

    RF characterization of rectangular to ridge waveguide transitions for RF power couplers has been carried out by connecting them back to back. Rectangular waveguide to N type adapters are first calibrated by TRL method and then used for RF measurements. Detailed information is obtained about their RF behavior by measurements and full wave simulations. It is shown that the two transitions can be characterized and tuned for required return loss at design frequency of 352.2 MHz. This opens the possibility of testing and conditioning two transitions together on a test bench. Finally, a RF coupler based on these transitions is coupled to an accelerator cavity. The power coupler is successfully tested up to 200 kW, 352.2 MHz with 0.2% duty cycle.

  9. High-powered, solid-state rf systems

    International Nuclear Information System (INIS)

    Reid, D.W.

    1987-01-01

    Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

  10. High power RF oscillator with Marx generators

    International Nuclear Information System (INIS)

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  11. High power rf component testing for the NLC

    International Nuclear Information System (INIS)

    Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

    1998-09-01

    In the Next Linear Collider (NLC), the high power rf components must be capable of handling peak rf power levels in excess of 600 MW. In the current view of the NLC, even the rectangular waveguide components must transmit at least 300 MW rf power. At this power level, peak rf fields can greatly exceed 100 MV/m. The authors present recent results of high power tests performed at the Accelerator Structure Test Area (ASTA) at SLAC. These tests are designed to investigate the rf breakdown limits of several new components potentially useful for the NLC. In particular, the authors tested a new TE 01 --TE 10 circular to rectangular wrap-around mode converter, a modified (internal fin) Magic Tee hybrid, and an upgraded flower petal mode converter

  12. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  13. Development and advances in conventional high power RF systems

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1995-06-01

    The development of rf systems capable of producing high peak power (hundreds of megawatts) at relatively short pulse lengths (0.1--5 microseconds) is currently being driven mainly by the requirements of future high energy linear colliders, although there may be applications to industrial, medical and research linacs as well. The production of high peak power rf typically involves four basic elements: a power supply to convert ac from the ''wall plug'' to dc; a modulator, or some sort of switching element, to produce pulsed dc power; an rf source to convert the pulsed dc to pulsed rf power; and possibly an rf pulse compression system to further enhance the peak rf power. Each element in this rf chain from wall plug to accelerating structure must perform with high efficiency in a linear collider application, such that the overall system efficiency is 30% or more. Basic design concepts are discussed for klystrons, modulators and rf pulse compression systems, and their present design status is summarized for applications to proposed linear colliders

  14. Embedded control system for high power RF amplifiers

    International Nuclear Information System (INIS)

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  15. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  16. The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

    Directory of Open Access Journals (Sweden)

    Accarat Chaoumead

    2012-01-01

    Full Text Available Transparent conductive titanium-doped indium oxide (ITiO films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4  Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4  Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

  17. High power RF systems for the BNL ERL project

    Energy Technology Data Exchange (ETDEWEB)

    Zaltsman, A.; Lambiase, R.

    2011-03-28

    The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

  18. Low reflectance high power RF load

    Science.gov (United States)

    Ives, R. Lawrence; Mizuhara, Yosuke M.

    2016-02-02

    A load for traveling microwave energy has an absorptive volume defined by cylindrical body enclosed by a first end cap and a second end cap. The first end cap has an aperture for the passage of an input waveguide with a rotating part that is coupled to a reflective mirror. The inner surfaces of the absorptive volume consist of a resistive material or are coated with a coating which absorbs a fraction of incident RF energy, and the remainder of the RF energy reflects. The angle of the reflector and end caps is selected such that reflected RF energy dissipates an increasing percentage of the remaining RF energy at each reflection, and the reflected RF energy which returns to the rotating mirror is directed to the back surface of the rotating reflector, and is not coupled to the input waveguide. Additionally, the reflector may have a surface which generates a more uniform power distribution function axially and laterally, to increase the power handling capability of the RF load. The input waveguide may be corrugated for HE11 mode input energy.

  19. Design of an L-band normally conducting RF gun cavity for high peak and average RF power

    Energy Technology Data Exchange (ETDEWEB)

    Paramonov, V., E-mail: paramono@inr.ru [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Philipp, S. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Rybakov, I.; Skassyrskaya, A. [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Stephan, F. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany)

    2017-05-11

    To provide high quality electron bunches for linear accelerators used in free electron lasers and particle colliders, RF gun cavities operate with extreme electric fields, resulting in a high pulsed RF power. The main L-band superconducting linacs of such facilities also require a long RF pulse length, resulting in a high average dissipated RF power in the gun cavity. The newly developed cavity based on the proven advantages of the existing DESY RF gun cavities, underwent significant changes. The shape of the cells is optimized to reduce the maximal surface electric field and RF loss power. Furthermore, the cavity is equipped with an RF probe to measure the field amplitude and phase. The elaborated cooling circuit design results in a lower temperature rise on the cavity RF surface and permits higher dissipated RF power. The paper presents the main solutions and results of the cavity design.

  20. Power deposition profile during lower hybrid current drive in Tore Supra

    International Nuclear Information System (INIS)

    Pecquet, A.L.; Moreau, D.; Fall, T.; Lasalle, J.; Lecoustey, P.; Mattioli, M.; Peysson, Y.; Auge, N.; Rodriguez, L.; Talvard, M.; Hubbard, A.; Moret, J.M.

    1991-01-01

    Lower hybrid current drive (LHCD) experiments have been performed in Tore Supra in various density regimes. The total power coupled to the plasma reached 4MW and a strong electron heating has been observed. To investigate the power deposition mechanism on the electrons, r.f power modulation experiments have been performed. These experiments allow us to estimate the power deposition profiles on both thermal and non-thermal electrons and also to study their respective time responses. From these studies it is possible to deduce a thermal heating scenario which agrees with the experimental results

  1. High Power RF Test Facility at the SNS

    CERN Document Server

    Kang, Yoon W; Campisi, Isidoro E; Champion, Mark; Crofford, Mark; Davis, Kirk; Drury, Michael A; Fuja, Ray E; Gurd, Pamela; Kasemir, Kay-Uwe; McCarthy, Michael P; Powers, Tom; Shajedul Hasan, S M; Stirbet, Mircea; Stout, Daniel; Tang, Johnny Y; Vassioutchenko, Alexandre V; Wezensky, Mark

    2005-01-01

    RF Test Facility has been completed in the SNS project at ORNL to support test and conditioning operation of RF subsystems and components. The system consists of two transmitters for two klystrons powered by a common high voltage pulsed converter modulator that can provide power to two independent RF systems. The waveguides are configured with WR2100 and WR1150 sizes for presently used frequencies: 402.5 MHz and 805 MHz. Both 402.5 MHz and 805 MHz systems have circulator protected klystrons that can be powered by the modulator capable of delivering 11 MW peak and 1 MW average power. The facility has been equipped with computer control for various RF processing and complete dual frequency operation. More than forty 805 MHz fundamental power couplers for the SNS superconducting linac (SCL) cavitites have been RF conditioned in this facility. The facility provides more than 1000 ft2 floor area for various test setups. The facility also has a shielded cave area that can support high power tests of normal conducti...

  2. Eighth CW and High Average Power RF Workshop

    CERN Document Server

    2014-01-01

    We are pleased to announce the next Continuous Wave and High Average RF Power Workshop, CWRF2014, to take place at Hotel NH Trieste, Trieste, Italy from 13 to 16 May, 2014. This is the eighth in the CWRF workshop series and will be hosted by Elettra - Sincrotrone Trieste S.C.p.A. (www.elettra.eu). CWRF2014 will provide an opportunity for designers and users of CW and high average power RF systems to meet and interact in a convivial environment to share experiences and ideas on applications which utilize high-power klystrons, gridded tubes, combined solid-state architectures, high-voltage power supplies, high-voltage modulators, high-power combiners, circulators, cavities, power couplers and tuners. New ideas for high-power RF system upgrades and novel ways of RF power generation and distribution will also be discussed. CWRF2014 sessions will start on Tuesday morning and will conclude on Friday lunchtime. A visit to Elettra and FERMI will be organized during the workshop. ORGANIZING COMMITTEE (OC): Al...

  3. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    International Nuclear Information System (INIS)

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  4. High power RF transmission line component development

    International Nuclear Information System (INIS)

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I.

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant ε=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  5. High power RF transmission line component development

    Energy Technology Data Exchange (ETDEWEB)

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant {epsilon}=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  6. Development of C-band High-Power Mix-Mode RF Window

    CERN Document Server

    Michizono, S; Matsumoto, T; Nakao, K; Takenaka, T

    2004-01-01

    High power c-band (5712 MHz) rf system (40 MW, 2 μs, 50 Hz) is under consideration for the electron-linac upgrade aimed for the super KEKB project. An rf window, which isolates the vacuum and pass the rf power, is one of the most important components for the rf system. The window consists of a ceramic disk and a pill-box housing. The mix-mode rf window is designed so as to decrease the electric field on the periphery of the ceramic disk. A resonant ring is assembled in order to examine the high-power transmission test. The window was tested up to the transmission power of 160 MW. The rf losses are also measured during the rf operation.

  7. RF power generation for future linear colliders

    International Nuclear Information System (INIS)

    Fowkes, W.R.; Allen, M.A.; Callin, R.S.; Caryotakis, G.; Eppley, K.R.; Fant, K.S.; Farkas, Z.D.; Feinstein, J.; Ko, K.; Koontz, R.F.; Kroll, N.; Lavine, T.L.; Lee, T.G.; Miller, R.H.; Pearson, C.; Spalek, G.; Vlieks, A.E.; Wilson, P.B.

    1990-06-01

    The next linear collider will require 200 MW of rf power per meter of linac structure at relatively high frequency to produce an accelerating gradient of about 100 MV/m. The higher frequencies result in a higher breakdown threshold in the accelerating structure hence permit higher accelerating gradients per meter of linac. The lower frequencies have the advantage that high peak power rf sources can be realized. 11.42 GHz appears to be a good compromise and the effort at the Stanford Linear Accelerator Center (SLAC) is being concentrated on rf sources operating at this frequency. The filling time of the accelerating structure for each rf feed is expected to be about 80 ns. Under serious consideration at SLAC is a conventional klystron followed by a multistage rf pulse compression system, and the Crossed-Field Amplifier. These are discussed in this paper

  8. Device quality InO{sub x}:Sn and InO{sub x} thin films deposited at room temperature with different rf-power densities

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, A., E-mail: ana.de.amaral@ist.utl.pt [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Brogueira, P. [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Dept. de Fisica and ICEMS, Campo Grande, 1749-016 Lisboa (Portugal); Lavareda, G. [Dept. de Ciencia dos Materiais and CTS, FCT-UNL, 2829-516 Caparica (Portugal); Nunes de Carvalho, C. [Dept. de Ciencia dos Materiais, FCT-UNL and ICEMS, 2829-516 Caparica (Portugal)

    2012-12-30

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm{sup 2} and 58.6 mW/cm{sup 2} as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 Multiplication-Sign 10{sup -4} {Omega}{center_dot}cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm{sup 2} from a 5% Sn alloy or at 19.5 mW/cm{sup 2} from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: Black-Right-Pointing-Pointer InO{sub x}:Sn and InO{sub x} thin films were deposited at room temperature. Black-Right-Pointing-Pointer Transparency and electrical resistivity are relatively independent of Sn content. Black-Right-Pointing-Pointer Device quality material was obtained. Black-Right-Pointing-Pointer The surface morphology homogeneity of the films varies with tin content.

  9. RF Power Generation in LHC

    CERN Document Server

    Brunner, O C; Valuch, D

    2003-01-01

    The counter-rotating proton beams in the Large Hadron Collider (LHC) will be captured and then accelerated to their final energies of 2 x 7 TeV by two identical 400 MHz RF systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell super-conducting (SC) cavity. Four klystrons are powered by a 100 kV, 40A AC/DC power converter, previously used for the operation of the LEP klystrons. A five-gap thyratron crowbar protects the four klystrons in each of these units. The technical specification and measured performance of the various high-power elements are discussed. These include the 400MHz/300kW klystrons with emphasis on their group delay and the three-port circulators, which have to cope with peak reflected power levels up to twice the simultaneously applied incident power of 300 kW. In addition, a novel ferrite loaded waveguide absorber, used as termination for port No...

  10. High Power RF Transmitters for ICRF Applications on EAST

    International Nuclear Information System (INIS)

    Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

    2013-01-01

    An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

  11. Advances in high-power rf amplifiers

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  12. Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Sea-Fue Wang

    2014-01-01

    Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

  13. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  14. Rf-to-dc power converters for wireless powering

    KAUST Repository

    Ouda, Mahmoud Hamdy

    2016-12-01

    Various examples are provided related to radio frequency (RF) to direct current (DC) power conversion. In one example, a RF-to-DC converter includes a fully cross-coupled rectification circuit including a pair of forward rectifying transistors and a feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a fully cross-coupled rectification circuit including a pair of forward rectifying transistors; and providing a DC output voltage from an output connection of the fully cross-coupled rectification circuit, where gating of the pair of forward rectifying transistors is controlled by feedback bias signals provided to gates of the pair of forward rectifying transistors via feedback branch elements.

  15. Glycol-Substitute for High Power RF Water Loads

    CERN Document Server

    Ebert, Michael

    2005-01-01

    In water loads for high power rf applications, power is dissipated directly into the coolant. Loads for frequencies below approx. 1GHz are ordinarily using an ethylene glycol-water mixture as coolant. The rf systems at DESY utilize about 100 glycol water loads with powers ranging up to 600kW. Due to the increased ecological awareness, the use of glycol is now considered to be problematic. In EU it is forbidden to discharge glycol into the waste water system. In case of cooling system leakages one has to make sure that no glycol is lost. Since it is nearly impossible to avoid any glycol loss in large rf systems, a glycol-substitute was searched for and found. The found sodium-molybdate based substitute is actually a additive for corrosion protection in water systems. Sodium-molybdate is ecologically harmless; for instance, it is also used as fertilizer in agriculture. A homoeopathic dose of 0.4% mixed into deionised water gives better rf absorption characteristics than a 30% glycol mixture. The rf coolant feat...

  16. RF Power Transfer, Energy Harvesting, and Power Management Strategies

    Science.gov (United States)

    Abouzied, Mohamed Ali Mohamed

    Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various

  17. Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%

    CERN Document Server

    Baikov, Andrey Yu; Syratchev, Igor

    2015-01-01

    The increase in efficiency of RF power generation for future large accelerators is considered a high priority issue. The vast majority of the existing commercial high-power RF klystrons operates in the electronic efficiency range between 40% and 55%. Only a few klystrons available on the market are capable of operating with 65% efficiency or above. In this paper, a new method to achieve 90% RF power conversion efficiency in a klystron amplifier is presented. The essential part of this method is a new bunching technique - bunching with bunch core oscillations. Computer simulations confirm that the RF production efficiency above 90% can be reached with this new bunching method. The results of a preliminary study of an L-band, 20-MW peak RF power multibeam klystron for Compact Linear Collider with the efficiency above 85% are presented.

  18. The RF power system for the SNS linac

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Reass, W.A.

    1998-01-01

    The initial goal of the SNS project is to produce a 1 MW average beam of protons with short pulse lengths onto a neutron-producing target. The objective of the SNS RF system is to generate 117 MW peak of pulsed 805 MHz microwave power with an accelerated beam pulse length of 1.04 ms at a 60 Hz repetition rate. The power system must be upgradeable in peak power to deliver 2 MW average power to the neutron target. The RF system also requires about 3 MW peak of RF power at 402.5 MHz, but that system is not discussed here. The design challenge is to produce an RF system at minimum cost, that is very reliable and economical to operate. The combination of long pulses and high repetition rates make conventional solutions, such as the pulse transformer and transmission line method, very expensive. The klystron, with a modulating anode, and 1.5 MW of peak output power is the baseline RF amplifier, an 56 are required in the baseline design. The authors discuss four power system configurations that are the candidates for the design. The baseline design is a floating-deck modulating anode system. A second power system being investigated is the fast-pulsed power supply, that can be turned on and off with a rise time of under 0.1 ms. This could eliminate the need for a modulator, and drastically reduce the energy storage requirements. A third idea is to use a pulse transformer with a series IGBT switch and a bouncer circuit on the primary side, as was done for the TESLA modulator. A fourth method is to use a series IGBT switch at high voltage, and not use a pulse transformer. The authors discuss the advantages and problems of these four types of power systems, but they emphasize the first two

  19. High power RF systems for LEHIPA of ADS

    International Nuclear Information System (INIS)

    Pande, Manjiri; Shrotriya, Sandip; Sharma, Sonal; Rao, B.V.R.; Mishra, J.K.; Patel, Niranjan; Gupta, S.K.

    2011-01-01

    Worldwide accelerator driven sub-critical system (ADS) has generated a huge interest for various reasons. In India, as a part of accelerator driven sub-critical system (ADS) program, a normal conducting, low energy high intensity proton accelerator (LEHIPA) of energy 20 MeV and beam current of 30 mA is being developed in Bhabha Atomic Research Centre (BARC). LEHIPA comprises of Electron Cyclotron Resonance (ECR) ion source (50 KeV), Radio Frequency Quadrupole (RFQ) accelerator (3 MeV) and Drift tube Linac (DTL) 1 and 2 (10 MeV and 20 MeV respectively). As per the accelerator physics design, RFQ requires nearly 530 kW RF power while each of DTL need 900 kW. Each accelerating cavity will be driven by a one- megawatt (CW) klystron based high power RF (HPRF) system at 352.21 MHz. Three such RF systems will be developed. The RF system has been designed around five cavity klystron tube TH2089F (Thales make) capable of delivering 1 MW continuous wave power at 352.21 MHz. The klystron has a gain of 40 dB and efficiency around 62 %. Each of the RF system comprises of a low power solid state driver (∼ 100 W), klystron tube, harmonic filter, directional coupler, Y-junction circulator (AFT make), RF load and WR2300 wave guide based RF transmission line each of 1 MW capacity. It also includes other subsystems like bias supplies (high voltage (HV) and low voltage (LV)), HV interface system, interlock and protection circuits, dedicated low conductivity water-cooling, pulsing circuitry/mechanisms etc. WR 2300 based RF transmission line transmits and feeds the RE power from klystron source to respective accelerating cavity. This transmission line starts from second port of the circulator and consists of straight sections, full height to half height transition, magic Tee, termination load at the centre of magic tee, half height sections, directional couplers and RE windows. For X-ray shielding, klystron will be housed in a lead (3 mm) based shielded cage. This system set up has a

  20. High power tests of X-band RF windows at KEK

    Energy Technology Data Exchange (ETDEWEB)

    Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

    1997-04-01

    Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

  1. Peel-and-Stick Sensors Powered by Directed RF Energy

    Energy Technology Data Exchange (ETDEWEB)

    Lalau-Keraly, Christopher; Daniel, George; Lee, Joseph; Schwartz, David

    2017-08-30

    PARC, a Xerox Company, is developing a low-cost system of peel-and-stick wireless sensors that will enable widespread building environment sensor deployment with the potential to deliver up to 30% energy savings. The system is embodied by a set of RF hubs that provide power to automatically located sensor nodes, and relay data wirelessly to the building management system (BMS). The sensor nodes are flexible electronic labels powered by rectified RF energy transmitted by an RF hub and can contain multiple printed and conventional sensors. The system design overcomes limitations in wireless sensors related to power delivery, lifetime, and cost by eliminating batteries and photovoltaic devices. Sensor localization is performed automatically by the inclusion of a programmable multidirectional antenna array in the RF hub. Comparison of signal strengths while the RF beam is swept allows for sensor localization, reducing installation effort and enabling automatic recommissioning of sensors that have been relocated, overcoming a significant challenge in building operations. PARC has already demonstrated wireless power and temperature data transmission up to a distance of 20m with less than one minute between measurements, using power levels well within the FCC regulation limits in the 902-928 MHz ISM band. The sensor’s RF energy harvesting antenna achieves high performance with dimensions below 5cm x 9cm

  2. Indoor Wireless RF Energy Transfer for Powering Wireless Sensors

    Directory of Open Access Journals (Sweden)

    H. Visser

    2012-12-01

    Full Text Available For powering wireless sensors in buildings, rechargeable batteries may be used. These batteries will be recharged remotely by dedicated RF sources. Far-field RF energy transport is known to suffer from path loss and therefore the RF power available on the rectifying antenna or rectenna will be very low. As a consequence, the RF-to-DC conversion efficiency of the rectenna will also be very low. By optimizing not only the subsystems of a rectenna but also taking the propagation channel into account and using the channel information for adapting the transmit antenna radiation pattern, the RF energy transport efficiency will be improved. The rectenna optimization, channel modeling and design of a transmit antenna are discussed.

  3. Low power RF beam control electronics for the LEB

    International Nuclear Information System (INIS)

    Mestha, L.K.; Mangino, J.; Brouk, V.; Uher, T.; Webber, R.C.

    1993-05-01

    Beam Control Electronics for the Low Energy Booster (LEB) should provide a fine reference phase and frequency for the High Power RF System. Corrections applied on the frequency of the rf signal will reduce dipole synchrotron oscillations due to power supply regulation errors, errors in frequency source or errors in the cavity voltage. It will allow programmed beam radial position control throughout the LEB acceleration cycle. Furthermore the rf signal provides necessary connections during, adiabatic capture of the beam as injected into the LEB by the Linac and will guarantee LEB rf phase synchronism with the Medium Energy Booster (MEB) rf at a programmed time in the LEB cycle between a unique LEB bucket and a unique MEB bucket. We show in this paper a design and possible interfaces with other subsystems of the LEB such as the beam instrumentation, High Power RF Stations, global accelerator controls and the precision timing system. The outline of various components of the beam control system is also presented followed by some test results

  4. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  5. Rf power systems for the national synchrotron light source

    International Nuclear Information System (INIS)

    Dickinson, T.; Rheaume, R.H.

    1981-01-01

    The booster synchrotron and the two storage rings at the NSLS are provided with rf power systems of 3 kW, 50 kW, and 500 kW nominal output power, all at 53 MHz. This power is supplied by grounded grid tetrode amplifiers designed for television broadcast service. These amplifiers and associated power supplies, control and interlock systems, rf controls, and computer interface are described

  6. RF plasma deposition of thin SixGeyCz:H films using a combination of organometallic source materials

    International Nuclear Information System (INIS)

    Rapiejko, C.; Gazicki-Lipman, M.; Klimek, L.; Szymanowski, H.; Strojek, M.

    2004-01-01

    Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, mμ-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A x (IV)B y (IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si x C y :H films) or organogermanium compounds (to deposit Ge x C y :H films), as source substances. The present paper reports on a RF plasma deposition of a Si x Ge y C z :H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm 3 ) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach

  7. Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

    KAUST Repository

    Rakia, Tamer

    2016-02-26

    Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non- coherent hybrid FSO/RF systems, employing an adaptive combining scheme. Specifically, we activate the RF link along with the FSO link when FSO link quality is unacceptable, and adaptively set RF transmission power to ensure constant combined signal-to-noise ratio at receiver terminal. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are derived. Numerical examples show that, the hybrid FSO/RF systems with power adaptation achieve considerable outage performance improvement over conventional hybrid FSO/RF systems without power adaptation. © 2015 IEEE.

  8. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  9. Development of new S-band RF window for stable high-power operation in linear accelerator RF system

    Science.gov (United States)

    Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

    2017-09-01

    For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

  10. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  11. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  12. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan [Stanford Univ., CA (United States)

    2008-12-01

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  13. A describing function approach to bipolar RF-power amplifier simulation

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    1981-01-01

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

  14. Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

    DEFF Research Database (Denmark)

    Tsakadze, Erekle; Ostrikov, K.N.; Tsakadze, Z.L.

    2004-01-01

    ) discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral ("pancake") antennas. Relatively deeper rf power deposition...... in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental...

  15. RF power consumption emulation optimized with interval valued homotopies

    DEFF Research Database (Denmark)

    Musiige, Deogratius; Anton, François; Yatskevich, Vital

    2011-01-01

    This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between...... the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions....... The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power...

  16. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  17. A 12 GHz RF Power Source for the CLIC Study

    Energy Technology Data Exchange (ETDEWEB)

    Schirm, Karl; /CERN; Curt, Stephane; /CERN; Dobert, Steffen; /CERN; McMonagle, Gerard; /CERN; Rossat, Ghislain; /CERN; Syratchev, Igor; /CERN; Timeo, Luca; /CERN; Haase, Andrew /SLAC; Jensen, Aaron; /SLAC; Jongewaard, Erik; /SLAC; Nantista, Christopher; /SLAC; Sprehn, Daryl; /SLAC; Vlieks, Arnold; /SLAC; Hamdi, Abdallah; /Saclay; Peauger, Franck; /Saclay; Kuzikov, Sergey; /Nizhnii Novgorod, IAP; Vikharev, Alexandr; /Nizhnii Novgorod, IAP

    2012-07-03

    The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

  18. A 12 GHZ RF Power source for the CLIC study

    CERN Document Server

    Peauger, F; Curt, S; Doebert, S; McMonagle, G; Rossat, G; Schirm, KM; Syratchev, I; Timeo, L; Kuzikhov, S; Vikharev, AA; Haase, A; Sprehn, D; Jensen, A; Jongewaard, EN; Nantista, CD; Vlieks, A

    2010-01-01

    The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

  19. RF power harvesting: a review on designing methodologies and applications

    Science.gov (United States)

    Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

    2017-12-01

    Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

  20. RF Power Requirements for PEFP SRF Cavity Test

    International Nuclear Information System (INIS)

    Kim, Han Sung; Seol, Kyung Tae; Kwon, Hyeok Jung; Cho, Yong Sub

    2011-01-01

    For the future extension of the PEFP (Proton Engineering Frontier Project) Proton linac, preliminary study on the SRF (superconducting radio-frequency) cavity is going on including a five-cell prototype cavity development to confirm the design and fabrication procedures and to check the RF and mechanical properties of a low-beta elliptical cavity. The main parameters of the cavity are like followings. - Frequency: 700 MHz - Operating mode: TM010 pi mode - Cavity type: Elliptical - Geometrical beta: 0.42 - Number of cells: 5 - Accelerating gradient: 8 MV/m - Epeak/Eacc: 3.71 - Bpeak/Eacc: 7.47 mT/(MV/m) - R/Q: 102.3 ohm - Epeak: 29.68 MV/m (1.21 Kilp.) - Geometrical factor: 121.68 ohm - Cavity wall thickness: 4.3 mm - Stiffening structure: Double ring - Effective length: 0.45 m For the test of the cavity at low temperature of 4.2 K, many subsystems are required such as a cryogenic system, RF system, vacuum system and radiation shielding. RF power required to generate accelerating field inside cavity depends on the RF coupling parameters of the power coupler and quality factor of the SRF cavity and the quality factor itself is affected by several factors such as operating temperature, external magnetic field level and surface condition. Therefore, these factors should be considered to estimate the required RF power for the SRF cavity test

  1. Optical constants of silicon-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.

    2008-01-01

    Deposition of amorphous silicon-like (Si:O x :C y :H z ) thin films in a remote RF hollow cathode discharge plasma using Hexamethyldisoloxane as monomer and Ar as feed gas; has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using optical emission spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy-band gap E g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E g decreases from 3.28 eV to 3.14 eV with power increase from 100 to 300 W, and from 3.54 eV to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES. (author)

  2. RF power source for the compact linear collider test facility (CTF3)

    CERN Document Server

    McMonagle, G; Brown, Peter; Carron, G; Hanni, R; Mourier, J; Rossat, G; Syratchev, I V; Tanner, L; Thorndahl, L

    2004-01-01

    The CERN CTF3 facility will test and demonstrate many vital components of CLIC (Compact Linear Collider). This paper describes the pulsed RF power source at 2998.55 MHz for the drive-beam accelerator (DBA), which produces a beam with an energy of 150 MeV and a current of 3.5 Amps. Where possible, existing equipment from the LEP preinjector, especially the modulators and klystrons, is being used and upgraded to achieve this goal. A high power RF pulse compression system is used at the output of each klystron, which requires sophisticated RF phase programming on the low level side to achieve the required RF pulse. In addition to the 3 GHz system two pulsed RF sources operating at 1.5 GHz are being built. The first is a wide-band, low power, travelling wave tube (TWT) for the subharmonic buncher (SHB) system that produces a train of "phase coded" subpulses as part of the injector scheme. The second is a high power narrow band system to produce 20 MW RF power to the 1.5 GHz RF deflectors in the delay loop situate...

  3. Introduction to RF power amplifier design and simulation

    CERN Document Server

    Eroglu, Abdullah

    2015-01-01

    Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

  4. High-power RF controls for the NBS-Los Alamos racetrack microtron

    International Nuclear Information System (INIS)

    Young, L.M.; Biddl, R.S.

    1985-01-01

    The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kw cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference

  5. EXCESS RF POWER REQUIRED FOR RF CONTROL OF THE SPALLATION NEUTRON SOURCE (SNS) LINAC, A PULSED HIGH-INTENSITY SUPERCONDUCTING PROTON ACCELERATOR

    International Nuclear Information System (INIS)

    Lynch, M.; Kwon, S.

    2001-01-01

    A high-intensity proton linac, such as that being planned for the SNS, requires accurate RF control of cavity fields for the entire pulse in order to avoid beam spill. The current design requirement for the SNS is RF field stability within ±0.5% and ±0.5 o [1]. This RF control capability is achieved by the control electronics using the excess RF power to correct disturbances. To minimize the initial capital costs, the RF system is designed with 'just enough' RF power. All the usual disturbances exist, such as beam noise, klystron/HVPS noise, coupler imperfections, transport losses, turn-on and turn-off transients, etc. As a superconducting linac, there are added disturbances of large magnitude, including Lorentz detuning and microphonics. The effects of these disturbances and the power required to correct them are estimated, and the result shows that the highest power systems in the SNS have just enough margin, with little or no excess margin

  6. Summary of the 3rd workshop on high power RF-systems for accelerators

    International Nuclear Information System (INIS)

    Sigg, P.K.

    2005-01-01

    The aim of this workshop was to bring together experts from the field of CW and high average power RF systems. The focus was on operational and reliability issues of high-power amplifiers using klystrons and tubes, large power supplies; as well as cavity design and low-level RF and feedback control systems. All these devices are used in synchrotron radiation facilities, high power linacs and collider rings, and cyclotrons. Furthermore, new technologies and their applications were introduced, amongst other: high power solid state amplifiers, IOT amplifiers, and high voltage power supplies employing solid state controllers/crowbars. Numerical methods for complete rf-field modeling of complex RF structures like cyclotrons were presented, as well as integrated RF-cavity designs (electro-magnetic fields and mechanical structure), using numerical methods. (author)

  7. Feasibility Study for High Power RF – Energy Recovery in Particle Accelerators

    CERN Document Server

    Betz, Michael

    2010-01-01

    When dealing with particle accelerators, especially in systems with travelling wave structures and low beam loading, a substantial amount of RF power is dissipated in 50Ω termination loads. For the Super Proton Synchrotron (SPS) at Cern this is 69 % of the incident RF power or about 1 MW. Different ideas, making use of that otherwise dissipated power, are presented and their feasibility is reviewed. The most feasible one, utilizing an array of semiconductor based RF/DC modules, is used to create a design concept for energy recovery in the SPS. The modules are required to operate at high power, high efficiency and with low harmonic radiation. Besides the actual RF rectifier, they contain additional components to ensure a graceful degradation of the overall system. Different rectifier architectures and semiconductor devices are compared and the most suitable ones are chosen. Two prototype devices were built and operated with up to 400 W of pulsed RF power. Broadband measurements – capturing all harmonics up ...

  8. RF power sources for 5--15 TeV linear colliders

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1996-09-01

    After outlining the design of the NLC rf system at 1 TeV, the possibility of a leap in linear collider energy into the 5--15 TeV energy range is considered. To keep the active accelerator length and ac wall-plug power within reasonable bounds, higher accelerating gradients at higher rf frequencies will be necessary. Scaling relations are developed for basic rf system parameters as a function of frequency, and some specific parameter examples are given for colliders at 34 Ghz and 91 Ghz. Concepts for rf pulse compression system design and for high power microwave sources at 34 Ghz (for example sheet-beam and multiple-beam klystrons) are briefly discussed

  9. Time-resolved measurements of highly-polymerised negative ions in rf silane plasma deposition experiments

    International Nuclear Information System (INIS)

    Howling, A.A.; Sansonnens, L.; Dorier, J.L.; Hollenstein, C.

    1993-07-01

    The time-resolved fluxes of negative polysilicon hydride ions from a power-modulated rf silane plasma have been measured by quadrupole mass spectrometry and modeled using a simple polymerisation scheme. Experiments were performed with plasma parameters suitable for high-quality amorphous silicon deposition. Polysilicon hydride anions diffuse from the plasma with low energy (approximately 0.5 eV) during the afterglow after the electron density has decayed and the sheath fields have collapsed. The mass-dependence of the temporal behavior of the anion loss flux demonstrates that the plasma composition is influenced by the modulation frequency. The negative species attain much higher masses than the positive or neutral species, and anions containing as many as sixteen silicon atoms have been observed, corresponding to the 500 amu limit of the mass spectrometer. This suggests that negative ions could be the precursors to particle formation. Ion-molecule and ion-ion reactions are discussed and a simple negative ion polymerisation scheme is proposed which qualitatively reproduces the experimental results. The model shows that the densities of high mass negative ions in the plasma are strongly reduced by modulation frequencies near 1 kHz. Each plasma period is then too short for the polymerisation chain to propagate to high masses before the elementary anions are lost in each subsequent afterglow period. This explains why modulation of the rf power can reduce particle contamination. We conclude that, for the case of silane rf plasmas, the initiation steps which ultimately lead to particle contamination proceed by negative ion polymerisation. (author) 15 figs., 72 refs

  10. High power RF test of an 805 MHz RF cavity for a muon cooling channel

    International Nuclear Information System (INIS)

    Li, Derun; Corlett, J.; MacGill, R.; Rimmer, R.; Wallig, J.; Zisman, M.; Moretti, A.; Qian, Z.; Wu, V.; Summers, D.; Norem, J.

    2002-01-01

    We present recent high power RF test results on an 805 MHz cavity for a muon cooling experiment at Lab G in Fermilab. In order to achieve high accelerating gradient for large transverse emittance muon beams, the cavity design has adopted a pillbox like shape with 16 cm diameter beam iris covered by thin Be windows, which are demountable to allow for RF tests of different windows. The cavity body is made from copper with stiff stainless steel rings brazed to the cavity body for window attachments. View ports and RF probes are available for visual inspections of the surface of windows and cavity and measurement of the field gradient. Maximum of three thermo-couples can be attached to the windows for monitoring the temperature gradient on the windows caused by RF heating. The cavity was measured to have Q 0 of about 15,000 with copper windows and coupling constant of 1.3 before final assembling. A 12 MW peak power klystron is available at Lab G in Fermilab for the high power test. The cavity and coupler designs were performed using the MAFIA code in the frequency and the time domain. Numerical simulation results and cold test measurements on the cavity and coupler will be presented for comparisons

  11. Modeling high-power RF accelerator cavities with SPICE

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1992-01-01

    The dynamical interactions between RF accelerator cavities and high-power beams can be treated on personal computers using a lumped circuit element model and the SPICE circuit analysis code. Applications include studies of wake potentials, two-beam accelerators, microwave sources, and transverse mode damping. This report describes the construction of analogs for TM mn0 modes and the creation of SPICE input for cylindrical cavities. The models were used to study continuous generation of kA electron beam pulses from a vacuum cavity driven by a high-power RF source

  12. A low-power RF system with accurate synchronization for a S-band RF-gun using a laser-triggered photocathode

    International Nuclear Information System (INIS)

    Otake, Y.; Naito, T.; Shintake, T.; Takata, K.; Takeuchi, Y.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

    1992-01-01

    An S-band RF-gun using a laser-triggered photocathode and its low-power RF system have been constructed. The main elements of the low-power RF system comprise a 600-W amplifier, an amplitude modulator, a phase detector, a phase shifter and a frequency-divider module. Synchronization between the RF fields for acceleration and the mode-locked laser pulses for beam triggering are among the important points concerning the RF-gun. The frequency divider module which down-converts from 2856 MHz(RF) to 89.25 MHz(laser), and the electrical phase-shifter were specially developed for stable phase control. The phase jitter of the frequency divider should be less than 10 ps to satisfy our present requirements. The first experiments to trigger and accelerate beams with the above-mentioned system were carried out in January, 1992. (Author) 6 figs., 5 refs

  13. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    OpenAIRE

    Weinberger, Oliver; Winter, Lukas; Dieringer, Matthias A.; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M.; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    INTRODUCTION: The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. METHODS: Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each...

  14. Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2008-01-01

    An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

  15. Development of a large proton accelerator for innovative researches; development of high power RF source

    Energy Technology Data Exchange (ETDEWEB)

    Chung, K. H.; Lee, K. O.; Shin, H. M.; Chung, I. Y. [KAPRA, Seoul (Korea); Kim, D. I. [Inha University, Incheon (Korea); Noh, S. J. [Dankook University, Seoul (Korea); Ko, S. K. [Ulsan University, Ulsan (Korea); Lee, H. J. [Cheju National University, Cheju (Korea); Choi, W. H. [Korea Advanced Institute of Science and Technology, Taejeon (Korea)

    2002-05-01

    This study was performed with objective to design and develop the KOMAC proton accelerator RF system. For the development of the high power RF source for CCDTL(coupled cavity drift tube linac), the medium power RF system using the UHF klystron for broadcasting was integrated and with this RF system we obtained the basic design data, operation experience and code-validity test data. Based on the medium power RF system experimental data, the high power RF system for CCDTL was designed and its performed was analyzed. 16 refs., 64 figs., 27 tabs. (Author)

  16. Non-local energy deposition: A problem in regional RF hyperthermia

    International Nuclear Information System (INIS)

    Hagmann, M.J.; Levin, R.L.

    1984-01-01

    As the frequency is decreased below 1 GHz, RF applicators can cause deep heating of tissues. However, there is a concomitant problem in that significant energy deposition may occur well beyond the dimensions of the applicator. The BSD Medical Corporation has described to the authors tests with a phantom manequin in which SAR in the neck was significantly greater than that in the abdomen when an Annular Phased Array System (APAS) was positioned for abdominal heating. The authors have obtained numerical solutions for the SAR distribution in a 180-cell inhomogeneous block model of man subjected to r-f irradiation approximating that emanating from various applicators. The solutions agree with the reports of BSD that significant heating in the neck, inner thighs, and back will occur with an abdominally-placed APAS. They suggest that a similar problem will occur with a helical-coil or other applicator for which the electric field is predominantly parallel to the axis of the body. Typically, 70% or more of the total energy will be deposited outside the bounds of an axial applicator when it is placed around the chest or abdomen. The problem is most severe at frequencies for which body parts such as the arm or head may resonate. In such cases, over 90% of the energy may be deposited outside the bounds of applicator. The problem of non-local energy deposition appears to be substantially reduced for non-axial applicators. If the arm extends outward from the side of the body, an axial applicator around it will cause negligible energy deposition in the rest of the body

  17. Analysis of Passive RF-DC Power Rectification and Harvesting Wireless RF Energy for Micro-watt Sensors

    Directory of Open Access Journals (Sweden)

    Antwi Nimo

    2015-04-01

    Full Text Available In this paper, analytical modeling of passive rectifying circuits and the harvesting of electromagnetic (EM power from intentionally generated as well as from ubiquitous sources are presented. The presented model is based on the linearization of rectifying circuits. The model provides an accurate method of determining the output characteristics of rectifying circuits. The model was verified with Advance Design System (ADS Harmonic balance (HB simulations and measurements. The results from the presented model were in agreement with simulations and measurements. Consequently design considerations and trade-off of radio frequency (RF harvesters are discussed. To verify the exploitation of ambient RF power sources for operation of sensors, a dual-band antenna with a size of ~λ/4 at 900MHz and a passive dual-band rectifier that is able to power a commercial Thermo-Hygrometer requiring ~1.3V and 0.5MΩ from a global system for mobile communications (GSM base station is demonstrated. The RF power delivered by the receiving dual-band antenna at a distance of about 110 m from the GSM base station ranges from -27 dBm to -50 dBm from the various GSM frequency bands. Additionally, wireless range measurements of the RF harvesters in the industrial, scientific and medical (ISM band 868MHz is presented at indoor conditions.

  18. Design and manufacture of the RF power supply and RF transmission line for SANAEM project Prometheus

    Science.gov (United States)

    Turemen, G.; Ogur, S.; Ahiska, F.; Yasatekin, B.; Cicek, E.; Ozbey, A.; Kilic, I.; Unel, G.; Alacakir, A.

    2017-08-01

    A 1-5 MeV proton beamline is being built by the Turkish Atomic Energy Authority in collaboration with a number of graduate students from different universities. The primary goal of the project, is to acquire the design ability and manufacturing capability of all the components locally. SPP will be an accelerator and beam diagnostics test facility and it will also serve the detector development community with its low beam current. This paper discusses the design and construction of the RF power supply and the RF transmission line components such as its waveguide converters and its circulator. Additionally low and high power RF test results are presented to compare the performances of the locally produced components to the commercially available ones.

  19. RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

    2009-01-01

    Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

  20. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  1. Development of solid oxide fuel cells by applying DC and RF plasma deposition technologies

    Energy Technology Data Exchange (ETDEWEB)

    Schiller, G.; Henne, R.; Lang, M.; Mueller, M. [Deutsches Zentrum fuer Luft- und Raumfahrt (DLR), Institut fuer Technische Thermodynamik, Postfach 800370, 70503 Stuttgart (Germany)

    2004-04-01

    Based on advanced plasma deposition technology with both DC and RF plasmas DLR Stuttgart has developed a concept of a planar SOFC with consecutive deposition of all layers of a thin-film cell onto a porous metallic substrate support. This concept is an alternative approach to conventionally used sintering techniques for SOFC fabrication without needing any sintering steps or other thermal post-treatment. Furthermore, is has the potential to be developed into an automated continous production process. For both stationary and mobile applications, adequate stack designs and stack technologies have been developed. Future development work will focus on light-weight stacks to be applied as an Auxillary Power Unit (APU) for on-board electricity supply in passenger cars and airplanes. This paper describes the plasma deposition technologies used for cell fabrication and the DLR spray concept including the resulting stack designs. The current status of development and recent progress with respect to materials development and electrochemical characterization of single cells and short-stacks is presented. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  2. High-power rf controls for the NBS-Los Alamos racetrack microtron

    International Nuclear Information System (INIS)

    Young, L.M.; Biddle, R.S.

    1985-01-01

    The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kW cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. A block diagram of this system is shown, as is a subset of the complete system on which the measurements reported in this paper were performed. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference. 4 refs., 8 figs

  3. HIGH POWER TESTS OF A MULTIMODE X-BAND RF DISTRIBUTION SYSTEMS

    International Nuclear Information System (INIS)

    Tantawi, S

    2004-01-01

    We present a multimode X-band rf pulse compression system suitable for the Next Linear Collider (NLC). The NLC main linacs operate at 11.424 GHz. A single NLC rf unit is required which produce 400 ns pulses with 600 MW of peak power. Each rf unit should power approximately 5 meters of accelerator structures. These rf units consist of two 75 MW klystrons and a dual-moded resonant delay line pulse compression system [1] that produce a flat output pulse. The pulse compression system components are all over moded and most components are design to operate with two modes at the same time. This approach allows increasing the power handling capabilities of the system while maintain a compact inexpensive system. We detail the design of this system and present experimental cold test results. The high power testing of the system is verified using four 50-MW solenoid focused klystrons. These Klystrons should be able to push the system beyond NLC requirements

  4. Novel rf power sensor based on capacitive MEMS technology

    NARCIS (Netherlands)

    Fernandez, L.J.; Visser, Eelke; Sesé, J.; Jansen, Henricus V.; Wiegerink, Remco J.; Flokstra, Jakob

    2003-01-01

    We present the theory, design, fabrication of and first measurements on a novel power for radio frequency (rf) signals, based on capacitive measurements. The novelty of this sensor is thtat it measures the force that is created between the rf signal and a grounded membrande suspended above the line

  5. Plasma enhanced RF power deposition on ICRF antennas in Tore Supra

    International Nuclear Information System (INIS)

    Goulding, R.H.; Harris, J.H.; Carter, M.D.; Hoffman, D.J.; Hogan, J.T.; Ryan, P.M.; Beaumont, B.; Bremond, S.; Hutter, T.

    1997-01-01

    The dual-strap Tore Supra ICRF antennas have been very successful in coupling high power fluxes > 16 MW/m2 to the plasma. In many cases it has been found that the power is limited not by the voltages and currents that can be sustained on antenna components, but rather by localized increases in antenna surface temperatures which are correlated with increased impurity levels. Hot spots have been observed using an IR imaging system with peak temperatures as high as 1,100 C after 2 s, and as little as 1.5 MW power coupled from a single launcher. The maximum temperature observed is highly dependent on antenna phasing, and is lowest with dipole (π) phasing of the relative antenna currents. Both toroidal and poloidal asymmetries in hot spot distribution have been observed, and interestingly, the toroidal asymmetry has been found to vary when the phase is changed from +π/2 to -π/2. Significant differences in the temperature profiles have been seen on the two types of Faraday shield in use, which appears to be related to the fact that one type has a recessed center septum between straps while the other does not. In some cases, the peak temperature has been observed to increase as the antenna/plasma gap is increased, while the peak remains in the same location. This behavior suggests that voltages generated by currents flowing in the Faraday shield structure itself may play a role in generating potentials responsible for the hot spots, in addition to rf fields in the plasma. In this paper data on antenna surface heating and loading data as a function of plasma density, antenna/plasma gap, and phasing will be presented. Calculations from the RANT3D electromagnetic code together with bench measurements of electric fields near the antenna surface will also be shown

  6. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  7. Coating power RF components with TiN

    International Nuclear Information System (INIS)

    Kuchnir, M.; Hahn, E.

    1995-03-01

    A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used

  8. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  9. Effect on antenna structure of high power rf during plasma operation

    International Nuclear Information System (INIS)

    Haste, G.R.; Thomas, C.E.; Fadnek, A.; Carter, M.D.; Beaumont, B.; Becoulet, A.; Kuus, H.; Saoutic, B.

    1993-01-01

    High-power, long-pulse operation on the Tore Supra tokamak results in considerable stress on the plasma-facing components. The ICH antennas must deliver high-power rf(up to 4 MW per antenna) in this environment. The antenna structure is therefore subjected to the power flux resulting from the interaction between rf and the edge plasma. The structure's response during operation is described, as is the condition of the antenna after prolonged use

  10. A capacitive rf power sensor based on mems technology

    NARCIS (Netherlands)

    Fernandez, L.J.

    2005-01-01

    Existing power sensors for RF signals are based on thermistors, diodes and thermocouples. These power sensors are used as terminating devices and therefore they dissipate the complete incoming signal. Furthermore, new telecommunication systems require low weight, volume and power consumption and a

  11. X-band RF power sources for accelerator applications

    International Nuclear Information System (INIS)

    Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

    2011-01-01

    The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

  12. Voltage uniformity study in large-area reactors for RF plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sansonnens, L.; Pletzer, A.; Magni, D.; Howling, A.A.; Hollenstein, C. [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP); Schmitt, J.P.M. [Balzers Process Systems, Palaiseau (France)

    1996-09-01

    Non-uniform voltage distribution across the electrode area results in inhomogeneous thin-film RF plasma deposition in large area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode area is presented. The results of this model are in good agreement with measurements performed without plasma at 13.56 MHz and 70 MHz in a large area reactor. The principal voltage inhomogeneities are caused by logarithmic singularities in the vicinity of RF connections and not by standing waves. These singularities are only described by a two-dimensional model and cannot be intuitively predicted by analogy to a one-dimensional case. Plasma light emission measurements and thickness homogeneity studies of a-Si:H films show that the plasma reproduces these voltage inhomogeneities. Improvement of the voltage uniformity is investigated by changing the number and position of the RF connections. (author) 13 figs., 20 refs.

  13. Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

    Science.gov (United States)

    Keyrouz, Shady; Visser, Huib

    2013-12-01

    This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of -10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%.

  14. Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

    International Nuclear Information System (INIS)

    Keyrouz, Shady; Visser, Huib

    2013-01-01

    This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of −10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%

  15. Look at energy compression as an assist for high power rf production

    International Nuclear Information System (INIS)

    Birx, D.L.; Farkas, Z.D.; Wilson, P.B.

    1984-01-01

    The desire to construct electron linacs of higher and higher energies, coupled with the realities of available funding and real estate, has forced machine designers to reassess the limitations in both accelerator gradient (MeV/m) and energy. The gradients achieved in current radio-frequency (RF) linacs are sometimes set by electrical breakdown in the accelerating structure, but are in most cases determined by the RF power level available to drive the linac. In this paper we will not discuss RF power sources in general, but rather take a brief look at several energy compression schemes which might be of service in helping to make better use of the sources we employ. We will, however, diverge for a bit and discuss what the RF power requirements are. 12 references, 21 figures, 3 tables

  16. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  17. Fast-wave power flow along SOL field lines in NSTX and the associated power deposition profile across the SOL in front of the antenna

    International Nuclear Information System (INIS)

    Perkins, R.J.; Bell, R.E.; Diallo, A.; Gerhardt, S.; Hosea, J.C.; Jaworski, M.A.; LeBlanc, B.P.; Kramer, G.J.; Maingi, R.; Phillips, C.K.; Podestà, M.; Roquemore, L.; Scotti, F.; Ahn, J.-W.; Gray, T.K.; Green, D.L.; McLean, A.; Ryan, P.M.; Jaeger, E.F.; Sabbagh, S.

    2013-01-01

    Fast-wave heating and current drive efficiencies can be reduced by a number of processes in the vicinity of the antenna and in the scrape-off layer (SOL). On NSTX from around 25% to more than 60% of the high-harmonic fast-wave power can be lost to the SOL regions, and a large part of this lost power flows along SOL magnetic field lines and is deposited in bright spirals on the divertor floor and ceiling. We show that field-line mapping matches the location of heat deposition on the lower divertor, albeit with a portion of the heat outside of the predictions. The field-line mapping can then be used to partially reconstruct the profile of lost fast-wave power at the midplane in front of the antenna, and the losses peak close to the last closed flux surface as well as the antenna. This profile suggests a radial standing-wave pattern formed by fast-wave propagation in the SOL, and this hypothesis will be tested on NSTX-U. RF codes must reproduce these results so that such codes can be used to understand this edge loss and to minimize RF heat deposition and erosion in the divertor region on ITER. (paper)

  18. Development of an S-band high-power pillbox-type RF window

    International Nuclear Information System (INIS)

    Miura, A.; Matsumoto, H.

    1992-01-01

    We report on the development of RF windows used to handle a high transmission power up to 110 MW for the Japan Linear Collider. A detailed simulation on multipactoring has been carried out. The results were compared with cathode-luminescence on the surface of alumina RF windows experimentally observed with power transmission up to 200 MW. (Author) 10 refs., 9 figs

  19. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  20. The effect of phase difference between powered electrodes on RF plasmas

    International Nuclear Information System (INIS)

    Proschek, M; Yin, Y; Charles, C; Aanesland, A; McKenzie, D R; Bilek, M M; Boswell, R W

    2005-01-01

    This paper presents the results of measurements carried out on plasmas created in five different RF discharge systems. These systems all have two separately powered RF (13.56 MHz) electrodes, but differ in overall size and in the geometry of both vacuum chambers and RF electrodes or antennae. The two power supplies were synchronized with a phase-shift controller. We investigated the influence of the phase difference between the two RF electrodes on plasma parameters and compared the different system geometries. Single Langmuir probes were used to measure the plasma parameters in a region between the electrodes. Floating potential and ion density were affected by the phase difference and we found a strong influence of the system geometry on the observed phase difference dependence. Both ion density and floating potential curves show asymmetries around maxima and minima. These asymmetries can be explained by a phase dependence of the time evolution of the electrode-wall coupling within an RF-cycle resulting from the asymmetric system geometry

  1. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sin, N.D.M.; Rusop, M.

    2011-01-01

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  2. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  3. An RF energy harvesting power management circuit for appropriate duty-cycled operation

    Science.gov (United States)

    Shirane, Atsushi; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2015-04-01

    In this study, we present an RF energy harvesting power management unit (PMU) for battery-less wireless sensor devices (WSDs). The proposed PMU realizes a duty-cycled operation that is divided into the energy charging time and discharging time. The proposed PMU detects two types of timing, thus, the appropriate timing for the activation can be recognized. The activation of WSDs at the proper timing leads to energy efficient operation and stable wireless communication. The proposed PMU includes a hysteresis comparator (H-CMP) and an RF signal detector (RF-SD) to detect the timings. The proposed RF-SD can operate without the degradation of charge efficiency by reusing the RF energy harvester (RF-EH) and H-CMP. The PMU fabricated in a 180 nm Si CMOS demonstrated the charge operation using the RF signal at 915 MHz and the two types of timing detection with less than 124 nW in the charge phase. Furthermore, in the active phase, the PMU generates a 0.5 V regulated power supply from the charged energy.

  4. A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications.

    Science.gov (United States)

    Pizzotti, Matteo; Perilli, Luca; Del Prete, Massimo; Fabbri, Davide; Canegallo, Roberto; Dini, Michele; Masotti, Diego; Costanzo, Alessandra; Franchi Scarselli, Eleonora; Romani, Aldo

    2017-07-28

    We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to -17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc.) are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna) and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT). A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

  5. A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications

    Directory of Open Access Journals (Sweden)

    Matteo Pizzotti

    2017-07-01

    Full Text Available We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to −17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc. are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT. A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

  6. Design of resonant converter based DC power supply for RF amplifier

    International Nuclear Information System (INIS)

    Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

    2017-01-01

    ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

  7. RF plasma deposition of thin Si{sub x}Ge{sub y}C{sub z}:H films using a combination of organometallic source materials

    Energy Technology Data Exchange (ETDEWEB)

    Rapiejko, C. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)]. E-mail: gazickim@p.lodz.pl; Klimek, L. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Szymanowski, H. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Strojek, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)

    2004-12-22

    Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, m{mu}-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A{sub x}(IV)B{sub y}(IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si{sub x}C{sub y}:H films) or organogermanium compounds (to deposit Ge{sub x}C{sub y}:H films), as source substances. The present paper reports on a RF plasma deposition of a Si{sub x}Ge{sub y}C{sub z}:H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm{sup 3}) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach.

  8. Performance of the Crowbar of the LHC High Power RF System

    CERN Document Server

    Ravidà, G; Valuch, D

    2012-01-01

    The counter-rotating proton beams in the Large Hadron Collider (LHC) are captured and accelerated to their final energies by two identical 400 MHz Radio Frequency (RF) systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell superconducting (SC) cavity. Each unit of four klystrons is powered by a -100kV/40A AC/DC power converter. A fast protection system (crowbar) protects the four klystrons in each of these units. Although the LHC RF system has shown has very good performance, operational experience has shown that the five-gap double-ended thyratrons used in the crowbar system suffer, from time to time, from auto-firing, which result in beam dumps. This paper presents the recent results obtained with an alternative solution based on solid state thyristors. Comparative measurements with the thyratron are shown.

  9. New high power 200 MHz RF system for the LANSCE drift tube linac

    International Nuclear Information System (INIS)

    Lyles, J.; Friedrichs, C.; Lynch, M.

    1998-01-01

    The Los Alamos Neutron Science Center (LANSCE) linac provides an 800 MeV direct H + proton beam, and injects H - to the upgraded proton storage ring for charge accumulation for the Short Pulse Spallation Source. Accelerating these interlaced beams requires high average power from the 201.25 MHz drift tube linac (DTL) RF system. Three power amplifiers have operated at up to three Megawatts with 12% duty factor. The total number of electron power tubes in the RF amplifiers and their modulators has been reduced from fifty-two to twenty-four. The plant continues to utilize the original design of a tetrode driving a super power triode. Further increases in the linac duty factor are limited, in part, by the maximum dissipation ratings of the triodes. A description of the system modifications proposed to overcome these limitations includes new power amplifiers using low-level RF modulation for tank field control. The first high power Diacrode reg-sign is being delivered and a new amplifier cavity is being designed. With only eight power tubes, the new system will deliver both peak power and high duty factor, with lower mains power and cooling requirements. The remaining components needed for the new RF system will be discussed

  10. Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

    KAUST Repository

    Rakia, Tamer

    2015-07-23

    Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

  11. Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

    KAUST Repository

    Rakia, Tamer; Hong-Chuan Yang; Gebali, Fayez; Alouini, Mohamed-Slim

    2015-01-01

    Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

  12. Traveling wave linear accelerator with RF power flow outside of accelerating cavities

    Science.gov (United States)

    Dolgashev, Valery A.

    2016-06-28

    A high power RF traveling wave accelerator structure includes a symmetric RF feed, an input matching cell coupled to the symmetric RF feed, a sequence of regular accelerating cavities coupled to the input matching cell at an input beam pipe end of the sequence, one or more waveguides parallel to and coupled to the sequence of regular accelerating cavities, an output matching cell coupled to the sequence of regular accelerating cavities at an output beam pipe end of the sequence, and output waveguide circuit or RF loads coupled to the output matching cell. Each of the regular accelerating cavities has a nose cone that cuts off field propagating into the beam pipe and therefore all power flows in a traveling wave along the structure in the waveguide.

  13. Morphology, optical and electrical properties of Cu-Ni nanoparticles in a-C:H prepared by co-deposition of RF-sputtering and RF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Ghodselahi, T., E-mail: ghodselahi@ipm.ir [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Vesaghi, M.A. [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran (Iran, Islamic Republic of); Gelali, A.; Zahrabi, H.; Solaymani, S. [Young Researchers Club, Islamic Azad University, Kermanshah Branch, Kermanshah (Iran, Islamic Republic of)

    2011-11-01

    We report optical and electrical properties of Cu-Ni nanoparticles in hydrogenated amorphous carbon (Cu-Ni NPs - a-C:H) with different surface morphology. Ni NPs with layer thicknesses of 5, 10 and 15 nm over Cu NPs - a-C:H were prepared by co-deposition of RF-sputtering and RF-Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) from acetylene gas and Cu and Ni targets. A nonmetal-metal transition was observed as the thickness of Ni over layer increases. The surface morphology of the sample was described by a two dimensional (2D) Gaussian self-affine fractal, except the sample with 10 nm thickness of Ni over layer, which is in the nonmetal-metal transition region. X-ray diffraction profile indicates that Cu NPs and Ni NPs with fcc crystalline structure are formed in these films. Localized Surface Plasmon Resonance (LSPR) peak of Cu NPs is observed around 600 nm in visible spectra, which is widen and shifted to lower wavelengths as the thickness of Ni over layer increases. The variation of LSPR peak width correlates with conductivity variation of these bilayers. We assign both effects to surface electron delocalization of Cu NPs.

  14. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  15. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  16. Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, O; Hanus, J; Choukourov, A; Kousal, J; SlavInska, D; Biederman, H, E-mail: ondrej.kylian@gmail.co [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Prague 8, 180 00 (Czech Republic)

    2009-07-21

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH{sub 2}/C value of 18% was observed in the N{sub 2}/H{sub 2} discharge, which leads to the surface exhibiting a high rate of protein adsorption. (fast track communication)

  17. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  18. Results of the SLAC LCLS Gun High-Power RF Tests

    International Nuclear Information System (INIS)

    Dowell, D.H.; Jongewaard, E.; Limborg-Deprey, C.; Schmerge, J.F.; Li, Z.; Xiao, L.; Wang, J.; Lewandowski, J.; Vlieks, A.

    2007-01-01

    The beam quality and operational requirements for the Linac Coherent Light Source (LCLS) currently being constructed at SLAC are exceptional, requiring the design of a new RF photocathode gun for the electron source. Based on operational experience at SLAC's GTF and SDL and ATF at BNL as well as other laboratories, the 1.6cell s-band (2856MHz) gun was chosen to be the best electron source for the LCLS, however a significant redesign was necessary to achieve the challenging parameters. Detailed 3-D analysis and design was used to produce near-perfect rotationally symmetric rf fields to achieve the emittance requirement. In addition, the thermo-mechanical design allows the gun to operate at 120Hz and a 140MV/m cathode field, or to an average power dissipation of 4kW. Both average and pulsed heating issues are addressed in the LCLS gun design. The first LCLS gun is now fabricated and has been operated with high-power RF. The results of these high-power tests are presented and discussed

  19. Development of a high-power RF cavity for the PEP-II B factory

    International Nuclear Information System (INIS)

    Rimmer, R.A.; Allen, M.A.; Saba, J.; Schwarz, H.

    1995-03-01

    The authors describe the development and fabrication of the first high-power RF cavity for PEP-II. Design choices and fabrication technologies for the first cavity and subsequent production cavities are described. Conditioning and high-power testing of the first and subsequent cavities are discussed, as well as integration of the cavity into modular RF systems for both high-energy and low-energy rings. Plans for installation of the cavity raft assemblies in the RF sections of the PEP tunnel are also considered

  20. MgB2 for Application to RF Cavities for Accelerators

    International Nuclear Information System (INIS)

    Tajima, T.; Canabal, A.; Zhao, Y.; Romanenko, A.; Moeckly, B.H.; Nantista, C.D.; Tantawi, S.; Phillips, L.; Iwashita, Y.; Campisi, I.E.

    2007-01-01

    Magnesium diboride (MgB 2 ) has a transition temperature (T c ) of ∼40 K, i.e., about 4 times as high as that of niobium (Nb).We have been evaluating MgB 2 as a candidate material for radio-frequency (RF) cavities for future particle accelerators. Studies in the last 3 years have shown that it could have about one order of magnitude less RF surface resistance (Rs) than Nb at 4 K. A power dependence test using a 6 GHz TE011 mode cavity has shown little power dependence up to ∼12 mT (120 Oe), limited by available power, compared to other high-Tc materials such as YBCO. A recent study showed, however, that the power dependence of Rs is dependent on the coating method. A film made with on-axis pulsed laser deposition (PLD) has showed rapid increase in Rs compared to the film deposited by reactive evaporation method. This paper shows these results as well as future plans

  1. Performance test of lower hybrid waveguide under long/high-RF power transmission

    International Nuclear Information System (INIS)

    Seki, Masami; Obara, Kenjiro; Maebara, Sunao

    1996-06-01

    Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10 -6 -10 -5 Pa m 3 /sec m 2 (10 -9 -10 -8 Torr 1/sec cm 2 ) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H 2 or D 2 gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be ∼100degC by using of water cooling at a power level of 150 MW/m 2 RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10 -7 Pa m 3 /sec m 2 (10 -10 Torr 1/sec cm 2 ). The steady state RF injection was demonstrated with water cooling. (author)

  2. Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

    DEFF Research Database (Denmark)

    Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

    2007-01-01

    due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

  3. Modeling and design techniques for RF power amplifiers

    CERN Document Server

    Raghavan, Arvind; Laskar, Joy

    2008-01-01

    The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

  4. Development and simulation of RF components for high power millimeter wave gyrotrons

    Energy Technology Data Exchange (ETDEWEB)

    Pereyaslavets, M.; Sato, M.; Shimozuma, T.; Takita, Y.; Idei, H.; Kubo, S.; Ohkubo, K.; Hayashi, K.

    1996-11-01

    To test gyrotron RF components, efficient low-power generators for rotating high-order modes of high purity are necessary. Designs of generators for the TE{sub 15,3} mode at 84 GHz and for the TE{sub 31,8} mode at 168 GHz are presented and some preliminary test results are discussed. In addition, Toshiba gyrotron cavities at 168 GHz were analyzed for leakage of RF power in the beam tunnel. To decrease RF power leakage, the declination angle of the cut-off cavity cross section has to be decreased. A TE{sub 15,3} waveguide nonlinear uptaper is analyzed at 84 GHz as well as 168 GHz uptapers. Since the calculated conversion losses are slightly higher than designed value, an optimization of those uptapers may be required. (author)

  5. Evaluation of a new method of RF power coupling to acceleration cavity of charged particles accelerators

    Directory of Open Access Journals (Sweden)

    A M Poursaleh

    2017-08-01

    Full Text Available In this paper, the feasibility studty of a new method of RF power coupling to acceleration cavity of charged particles accelerator will be evaluated. In this method a slit is created around the accelerator cavity, and RF power amplifier modules is connected directly to the acceleration cavity. In fact, in this design, the cavity in addition to acting as an acceleration cavity, acts as a RF power combiner. The benefits of this method are avoiding the use of RF vacuum tubes, transmission lines, high power combiner and coupler. In this research, cylindrical and coaxial cavities were studied, and a small sample coaxial cavity is build by this method. The results of the resarch showed that compact, economical and safe RF accelerators can be achieved by the proposed method

  6. Outgassing studies of lower hybrid antenna module during CW high RF power injection

    International Nuclear Information System (INIS)

    Goniche, M.; Brossaud, J.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.; Maebara, S.; Ikeda, Y.; Imai, T.; Nagashima, T.

    1994-01-01

    Outgassing, induced by very long RF waves injection (up to 6000s) at high power density, is studied with a module, able to be used for a lower hybrid frequency antenna. A large outgassing data base is provided by 75 shots cumulating 27 hours of RF injection. Outgassing rate is documented after different thermal pre-treatments, and in various conditions of cooling, RF power level. Relevant parameters are identified and values of outgassing rates are given in order to design pumping system for a large antenna. (author) 4 refs.; 7 figs.; 1 tab

  7. Interplay of the influence of oxygen partial pressure and rf power on ...

    Indian Academy of Sciences (India)

    2017-07-25

    Jul 25, 2017 ... extra heating) and low pressure p = 0.5 mTorr, varying the rf power density between P = 0.57 and 2.83 W cm−2 at different relative oxygen ... thin films are used as window layers in solar cells [1–3]. Sput- tering (especially rf ... defect density [11,12]. In the literature there are works reporting the effect of rf.

  8. Performance test of lower hybrid waveguide under long/high-RF power transmission

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Masami; Obara, Kenjiro; Maebara, Sunao [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

    1996-06-01

    Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10{sup -6}-10{sup -5} Pa m{sup 3}/sec m{sup 2} (10{sup -9}-10{sup -8} Torr 1/sec cm{sup 2}) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H{sub 2} or D{sub 2} gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be {approx}100degC by using of water cooling at a power level of 150 MW/m{sup 2} RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10{sup -7} Pa m{sup 3}/sec m{sup 2} (10{sup -10} Torr 1/sec cm{sup 2}). The steady state RF injection was demonstrated with water cooling. (author).

  9. RF transport

    International Nuclear Information System (INIS)

    Choroba, Stefan

    2013-01-01

    This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

  10. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

    NARCIS (Netherlands)

    Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

    2002-01-01

    This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

  11. High-power, solid-state rf source for accelerator cavities

    International Nuclear Information System (INIS)

    Vaughan, D.R.; Mols, G.E.; Reid, D.W.; Potter, J.M.

    1985-01-01

    During the past few years the Defense and Electronics Center of Westinghouse Electric Corporation has developed a solid-state, 250-kW peak, rf amplifier for use with the SPS-40 radar system. This system has a pulse length of 60 μs and operates across the frequency band from 400 to 450 MHz. Because of the potential use of such a system as an rf source for accelerator applications, a collaborative experiment was initiated between Los Alamos National Laboratory and Westinghouse to simulate the resonant load conditions of an accelerator cavity. This paper describes the positive results of that experiment as well as the solid-state amplifier architecture. It also explores the future of high-power, solid-state amplifiers as rf sources for accelerator structures

  12. Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

    International Nuclear Information System (INIS)

    Tsakadze, E.L.; Ostrikov, K.; Tsakadze, Z.L.; Vladimirov, S.V.; Xu, S.

    2004-01-01

    Radial and axial distributions of magnetic fields in a low-frequency (∼460 kHz) inductively coupled plasma source with two internal crossed planar rf current sheets are reported. The internal antenna configuration comprises two orthogonal sets of eight alternately reconnected parallel and equidistant copper litz wires in quartz enclosures and generates three magnetic (H z , H r , and H φ ) and two electric (E φ and E r ) field components at the fundamental frequency. The measurements have been performed in rarefied and dense plasmas generated in the electrostatic (E) and electromagnetic (H) discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral ('pancake') antennas. Relatively deeper rf power deposition in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental data

  13. LCLS-II high power RF system overview and progress

    Energy Technology Data Exchange (ETDEWEB)

    Yeremian, Anahid Dian

    2015-10-07

    A second X-ray free electron laser facility, LCLS-II, will be constructed at SLAC. LCLS-II is based on a 1.3 GHz, 4 GeV, continuous-wave (CW) superconducting linear accelerator, to be installed in the first kilometer of the SLAC tunnel. Multiple types of high power RF (HPRF) sources will be used to power different systems on LCLS-II. The main 1.3 GHz linac will be powered by 280 1.3 GHz, 3.8 kW solid state amplifier (SSA) sources. The normal conducting buncher in the injector will use four more SSAs identical to the linac SSAs but run at 2 kW. Two 185.7 MHz, 60 kW sources will power the photocathode dual-feed RF gun. A third harmonic linac section, included for linearizing the bunch energy spread before the first bunch compressor, will require sixteen 3.9 GHz sources at about 1 kW CW. A description and an update on all the HPRF sources of LCLS-II and their implementation is the subject of this paper.

  14. ICRF power deposition profile and determination of the electron thermal diffusivity by modulation experiments in JET

    International Nuclear Information System (INIS)

    Gambier, D.J.; Evrard, M.P.; Adam, J.

    1990-01-01

    The power deposition profile in the ion cyclotron range of frequencies (ICRF) has been investigated experimentally in JET by means of a square wave modulated RF perturbation. The study has been conducted in D(H) and D( 3 He) plasmas for two heating scenarios. In D( 3 He) plasmas and for central heating in a scenario where mode conversion to Bernstein waves is accessible, the direct power deposition profile on electrons has been derived. It accounts for 15% of the total coupled power and extends over 25% of the minor radius. Outside the RF power deposition zone, the electron thermal diffusivity χ e inside the inversion radius surface (r i ) can be estimated through observation of the diffusive electronic transport. In discharges without monster sawteeth and for a low central temperature gradient (∇T e (r ≤ r i ) ≤ ∇T e (r ≥ r i ) approx. = 5 keV·m -1 ) the value obtained is small (approx. =0.24 +- 0.05 m 2 · s -1 ), typically ten times lower than χ e values deduced from heat pulse propagation in similar discharges at radii larger than the inversion radius. For the D(H) minority heating scheme, a large fraction of the ICRF modulated power is absorbed by minority ions, and the minority tail is modulated with a characteristic ion-electron (i-e) slowing-down time. In this scheme, electron heating occurs only through collisions with the minority ion tail and no modulation of the electron temperature is observed in sawtoothing discharges. This is interpreted as a consequence of the long i-e equipartition time, acting as an integrator for the modulated ICRF signal. Finally, a correlation between the time of the sawtooth crash and the periodic turn-off of the ICRF power is found and its consequence for modulation experiments is reviewed. (author). 22 refs, 16 figs

  15. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  16. High power tests of dressed supconducting 1.3 GHz RF cavities

    Energy Technology Data Exchange (ETDEWEB)

    Hocker, A.; Harms, E.R.; Lunin, A.; Sukhanov, A.; /Fermilab

    2011-03-01

    A single-cavity test cryostat is used to conduct pulsed high power RF tests of superconducting 1.3 GHz RF cavities at 2 K. The cavities under test are welded inside individual helium vessels and are outfitted ('dressed') with a fundamental power coupler, higher-order mode couplers, magnetic shielding, a blade tuner, and piezoelectric tuners. The cavity performance is evaluated in terms of accelerating gradient, unloaded quality factor, and field emission, and the functionality of the auxiliary components is verified. Test results from the first set of dressed cavities are presented here.

  17. Rf power amplification by energy storage and switching

    International Nuclear Information System (INIS)

    Vernon, W.

    1989-01-01

    This paper reports that during the last decade there have been several suggestions for RF storage and switching schemes. The principle behind these schemes is simply that energy from a source which is on for a long time at moderate power can be stored in a resonant cavity and dumped (switched) in a short time to yield higher power. This is also the basis of SLED which is driving the SLC, but the major difference is in the switching and the proposed power gains. In the case of SLED there is no switch only a phase agile RF source, and the maximum power gain is about a factor of 3. Proposed storage and switching schemes are often based on large ratios of charge to discharge times, say 5 μsec/50 nsec = 100 which could be the power amplification ratio. An early demonstration of the switching of a superconducting cavity was reported. It was observed that a peak power gain of 9 at low power levels with a cold cavity and a room-temperature switch. The switch was a He gas filled tube positioned in the leg of a waveguide T so that a η/2 stub turned into a η/4 stub when the gas broke down and became a good conductor. All switches encountered to date are some variant of this technique; the stubs reflects back an out-of-phase signal which cancels the one from the cavity so that no power escapes while the low-loss dielectric tube is non-conducting

  18. High-power RF cavity R ampersand D for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Rimmer, R.; Lambertson, G.; Hodgson, J.

    1994-06-01

    We describe the development of a high-power test model of the 476 MHz RF cavity for the PEP-II B Factory. This cavity is designed to demonstrate the feasibility of a high-power design with higher-order mode (HOM) damping waveguides and the fabrication technologies involved, and it can also be used to evaluate aperture or loop couplers and various RF windows. Changes to the RF design to reduce peak surface heating are discussed and results of finite-element analyses of temperature and stress are presented. Fabrication methods for the prototype and subsequent production cavities are discussed

  19. Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

    International Nuclear Information System (INIS)

    Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

    2006-01-01

    Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

  20. Study on the RF power necessary to ignite plasma for the ICP test facility at HUST

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Haikun [School of Electronic Information and Communications, Huazhong University of Science and Technology, Wuhan (China); State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China); Li, Dong; Wang, Chenre; Li, Xiaofei; Chen, Dezhi; Liu, Kaifeng; Zhou, Chi; Pan, Ruimin [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China)

    2015-10-15

    An Radio-Frequency (RF) Inductively Coupled Plasma (ICP) ion source test facility has been successfully developed at Huazhong University of Science and Technology (HUST). As part of a study on hydrogen plasma, the influence of three main operation parameters on the RF power necessary to ignite plasma was investigated. At 6 Pa, the RF power necessary to ignite plasma influenced little by the filament heating current from 5 A to 9 A. The RF power necessary to ignite plasma increased rapidly with the operation pressure decreasing from 8 Pa to 4 Pa. The RF power necessary to ignite plasma decreased with the number of coil turns from 6 to 10. During the experiments, plasma was produced with the electron density of the order of 10{sup 16}m{sup -3} and the electron temperature of around 4 eV. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  2. Fundamental mode rf power dissipated in a waveguide attached to an accelerating cavity

    International Nuclear Information System (INIS)

    Kang, Y.W.

    1993-01-01

    An accelerating RF cavity usually requires accessory devices such as a tuner, a coupler, and a damper to perform properly. Since a device is attached to the wall of the cavity to have certain electrical coupling of the cavity field through the opening. RF power dissipation is involved. In a high power accelerating cavity, the RF power coupled and dissipated in the opening and in the device must be estimated to design a proper cooling system for the device. The single cell cavities of the APS storage ring will use the same accessories. These cavities are rotationally symmetric and the fields around the equator can be approximated with the fields of the cylindrical pillbox cavity. In the following, the coupled and dissipated fundamental mode RF power in a waveguide attached to a pillbox cavity is discussed. The waveguide configurations are (1) aperture-coupled cylindrical waveguide with matched load termination; (2) short-circuited cylindrical waveguide; and (3) E-probe or H-loop coupled coaxial waveguide. A short-circuited, one-wavelength coaxial structure is considered for the fundamental frequency rejection circuit of an H-loop damper

  3. An ultra-low-power RF transceiver for WBANs in medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Qi; Wu Nanjian [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Kuang Xiaofei, E-mail: nanjian@semi.ac.cn [College of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2011-06-15

    A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 {mu}m CMOS process. Its core area is 1.6 mm{sup 2}. The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 {mu}A current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

  4. An ultra-low-power RF transceiver for WBANs in medical applications

    International Nuclear Information System (INIS)

    Zhang Qi; Wu Nanjian; Kuang Xiaofei

    2011-01-01

    A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 μm CMOS process. Its core area is 1.6 mm 2 . The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 μA current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

  5. Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

    CERN Document Server

    Broere, J; Gómez Martínez, Y; Rossi, M

    2011-01-01

    Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

  6. Application of quasi-optical approach to construct RF power supply for TeV linear colliders

    International Nuclear Information System (INIS)

    Saldin, E.L.; Sarantsev, V.P.; Schneidmiller, E.A.; Ulyanov, Yu.N.; Yurkov, M.V.

    1995-01-01

    An idea to use a quasi-optical approach for constructing an RF power supply for TeV linear e + e - colliders is developed. The RF source of the proposed scheme is composed of a large number of low-power RF amplifiers commutated by quasi-optical elements. The RF power of this source is transmitted to the accelerating structure of the collider by means of quasi-optical waveguides and mirrors. Such an approach enables one not only to decrease the required peak RF power by several orders of magnitude with respect to the traditional approach based on standard klystron technique, but also to achieve the required level of reliability, as it is based on well-developed technology of serial microwave devices. To illustrate the proposed scheme, a conceptual project of 2x500 GeV X-band collider is considered. Accelerating structure of the collider is of the standard travelling wave type and the RF source is assumed to be composed of 0.7 MW klystrons. All equipment of such a collider is placed in a tunnel of 12x6 m 2 cross section. It is shown that such a collider may be constructed at the present level of accelerator technique. ((orig.))

  7. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  8. Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

    CERN Document Server

    Kerhervé, Eric

    2015-01-01

    This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

  9. Overview on thermal and mechanical challenges of high power RF electronic packaging

    NARCIS (Netherlands)

    Yuan, C.A.; Kregting, R.; Driel, W. van; Gielen, A.W.J.; Xiao, A.; Zhang, G.Q.

    2011-01-01

    High Power RF electronics is one of the essential parts for wireless communication, including the personal communication, broadcasting, microwave radar, etc. Moreover, high efficient high power electronics has entered the ISM market, such as the power generator of microwave oven. Power electronics

  10. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Jahodova, Vera; Ding, Xing-zhao; Seng, Debbie H.L.; Gulbinski, W.; Louda, P.

    2013-01-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power

  11. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Directory of Open Access Journals (Sweden)

    Oliver Weinberger

    Full Text Available The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation.Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated.Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit.Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants.

  12. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Science.gov (United States)

    Winter, Lukas; Dieringer, Matthias A.; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M.; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    Introduction The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. Methods Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated. Results Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit. Conclusion Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants. PMID:27598923

  13. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Science.gov (United States)

    Weinberger, Oliver; Winter, Lukas; Dieringer, Matthias A; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated. Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit. Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants.

  14. Ambient RF energy scavenging: GSM and WLAN power density measurements

    NARCIS (Netherlands)

    Visser, H.J.; Reniers, A.C.F.; Theeuwes, J.A.C.

    2009-01-01

    To assess the feasibility of ambient RF energy scavenging, a survey of expected power density levels distant from GSM-900 and GSM-1800 base stations has been conducted and power density measurements have been performed in a WLAN environment. It appears that for distances ranging from 25 m to 100 m

  15. Performance of RF power and phase control on JT-60 LHRF heating system

    International Nuclear Information System (INIS)

    Fujii, T.; Ikeda, Y.; Imai, T.; Honda, M.; Kiyono, K.; Maebara, S.; Saigusa, M.; Sakamoto, K.; Sawahata, M.; Seki, M.

    1987-01-01

    The performance of RF power and phase control on the JT-60 LHRFD heating system are presented. The JT-60 LHRF heating system has three units of huge RF source with a total output of 24 MW, each unit consisting of eight amplifier chains. A high power klystron generating 1 MW for 10 s at 2 GHz is used in each chain. Automatic gain control is employed to regulate the output power not only against gain fluctuations in the chain but also against the unstable plasma load without any output circulator for the klystron

  16. Review of tearing mode stabilization by RF power in tokamaks

    International Nuclear Information System (INIS)

    Giruzzi, G.; Zabiego, M.; Zohm, H.

    1999-01-01

    Control of tearing modes by means of heating and current drive inside the magnetic islands is one of the most important applications of RF power in tokamak reactors. The theoretical basis of this concept is reviewed, focusing on aspects related to RF-plasma interaction. Applications to the stabilization of neoclassical tearing modes in ITER by Electron Cyclotron Current Drive are presented to illustrate the basic physical dependences. The most significant experimental results and prospects for future applications are also discussed

  17. High power RF performance test of an improved SiC load

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, W.H.; Kim, S.H.; Park, Y.J. [Pohang Accelerator Lab., Pohang Inst. of Sceince and Technology, Pohang (KR)] [and others

    1998-11-01

    Two prototypes of SiC loads sustaining a maximum peak power of 50 MW were fabricated by Nihon Koshuha Co. in Japan. The PAL conducted the high power RF performance tests of SiC loads to verify the operation characteristics for the application to the PLS Linac. The in-situ facility for the K 12 module was used for the test, which consists of a modulator and klystron system, waveguide network, vacuum and cooling system, and RF analyzing equipment. As the test results, no breakdown appeared up to 50 MW peak power of 1 {mu}s pulse width at a repetition rate of 50 Hz. However, as the peak power increased above 20 MW at 4 {mu}s with 10 Hz, the breakdown phenomena has been observed. Analysing the test results with the current operation power level of PLS Linac, it is confirmed that the SiC loads well satisfy the criteria of the PLS Linac operation. (author)

  18. Rf system modeling for the high average power FEL at CEBAF

    International Nuclear Information System (INIS)

    Merminga, L.; Fugitt, J.; Neil, G.; Simrock, S.

    1995-01-01

    High beam loading and energy recovery compounded by use of superconducting cavities, which requires tight control of microphonic noise, place stringent constraints on the linac rf system design of the proposed high average power FEL at CEBAF. Longitudinal dynamics imposes off-crest operation, which in turn implies a large tuning angle to minimize power requirements. Amplitude and phase stability requirements are consistent with demonstrated performance at CEBAF. A numerical model of the CEBAF rf control system is presented and the response of the system is examined under large parameter variations, microphonic noise, and beam current fluctuations. Studies of the transient behavior lead to a plausible startup and recovery scenario

  19. The UK High Power RF Faraday Partnership Industrial, Academia, and Public Collaboration

    International Nuclear Information System (INIS)

    Phelps, A.D.R.; Carter, R.G.; Clunie, D.; Bowater, S.P.; Ellis, D.; Gamble, D.; Large, T.; Lucas, W.; Pettit, C.; Poole, M. W.; Smith, H.; Smith, P.W.; Wilcox, D.M.

    2003-01-01

    The High Power Radio Frequency (HPRF) Faraday Partnership is a UK technology forum for all users, designers, developers and researchers of RF and microwave devices and systems. High power RF and microwave engineering are key enabling technologies in a wide range of industrial sectors. Formed in October 2001 and funded initially by the UK Department of Trade and Industry and the UK Particle Physics and Astronomy Research Council, the purpose of the HPRF Faraday Partnership is the development of a vibrant research, development and manufacturing base capable of exploiting opportunities in high power radio-frequency engineering. The partnership includes the key UK industrial companies, research laboratories and university research groups. The number of partners is constantly growing and already numbers over thirty. The partnership provides the enabling technology for future high power RF systems and their power supplies through its research programme. It is training people for the sector through PhD studentships and employment as Research Associates. It is planned to develop a Masters Training program. Support and involvement in research for companies in the supply chain is provided through a Partnership Office, a web site and through a range of government funded research schemes. The HPRF Faraday Partnership is seeking to establish more long term international research and development collaborations

  20. Direct visual observation of powder dynamics in RF plasma-assisted deposition

    International Nuclear Information System (INIS)

    Howling, A.A.; Hollenstein, C.; Paris, P.J.

    1991-04-01

    Contamination due to particles generated and suspended in silane rf plasmas is investigated. Powder is rendered visible by illumination of the reactor volume. This simple diagnostic for global, spatio-temporal powder dynamics is used to study particle formation, trapping and powder reduction by power modulation. (author) 4 figs., 11 refs

  1. Study of a power coupler for superconducting RF cavities used in high intensity proton accelerator

    International Nuclear Information System (INIS)

    Souli, M.

    2007-07-01

    The coaxial power coupler needed for superconducting RF cavities used in the high energy section of the EUROTRANS driver should transmit 150 kW (CW operation) RF power to the protons beam. The calculated RF and dielectric losses in the power coupler (inner and outer conductor, RF window) are relatively high. Consequently, it is necessary to design very carefully the cooling circuits in order to remove the generated heat and to ensure stable and reliable operating conditions for the coupler cavity system. After calculating all type of losses in the power coupler, we have designed and validated the inner conductor cooling circuit using numerical simulations results. We have also designed and optimized the outer conductor cooling circuit by establishing its hydraulic and thermal characteristics. Next, an experiment dedicated to study the thermal interaction between the power coupler and the cavity was successfully performed at CRYOHLAB test facility. The critical heat load Qc for which a strong degradation of the cavity RF performance was measured leading to Q c in the range 3 W-5 W. The measured heat load will be considered as an upper limit of the residual heat flux at the outer conductor cold extremity. A dedicated test facility was developed and successfully operated for measuring the performance of the outer conductor heat exchanger using supercritical helium as coolant. The test cell used reproduces the realistic thermal boundary conditions of the power coupler mounted on the cavity in the cryo-module. The first experimental results have confirmed the excellent performance of the tested heat exchanger. The maximum residual heat flux measured was 60 mW for a 127 W thermal load. As the RF losses in the coupler are proportional to the incident RF power, we can deduce that the outer conductor heat exchanger performance is continued up to 800 kW RF power. Heat exchanger thermal conductance has been identified using a 2D axisymmetric thermal model by comparing

  2. Low power microwave tests on RF gun prototype of the Iranian Light Source Facility

    Directory of Open Access Journals (Sweden)

    A Sadeghipanah

    2017-08-01

    Full Text Available In this paper, we introduce RF electron gun of Iranian Light Source Facility (ILSF pre-injection system. Design, fabrication and low-power microwave tests results of the prototype RF electron gun have been described in detail. This paper also explains the tuning procedure of the prototype RF electron gun to the desired resonant frequency. The outcomes of this project brighten the path to the fabrication of the RF electron gun by the local industries  

  3. Wide-Range Adaptive RF-to-DC Power Converter for UHF RFIDs

    KAUST Repository

    Ouda, Mahmoud H.

    2016-07-27

    A wide-range, differential, cross-coupled rectifier is proposed with an extended dynamic range of input RF power that enables wireless powering from varying distances. The proposed architecture mitigates the reverse-leakage problem in conven- tional, cross-coupled rectifiers without degrading sensitivity. A prototype is designed for UHF RFID applications, and is imple- mented using 0.18 μ m CMOS technology. On-chip measurements demonstrate a sensitivity of − 18 dBm for 1 V output over a 100 k Ω load and a peak RF-to-DC power conversion efficiency of 65%. A conventional, fully cross-coupled rectifier is fabricated along- side for comparison and the proposed rectifier shows more than 2 × increase in dynamic range and a 25% boosting in output voltage than the conventional rectifier

  4. Spallation Neutron Source High Power RF Installation and Commissioning Progress

    CERN Document Server

    McCarthy, Michael P; Bradley, Joseph T; Fuja, Ray E; Gurd, Pamela; Hardek, Thomas; Kang, Yoon W; Rees, Daniel; Roybal, William; Young, Karen A

    2005-01-01

    The Spallation Neutron Source (SNS) linac will provide a 1 GeV proton beam for injection into the accumulator ring. In the normal conducting (NC) section of this linac, the Radio Frequency Quadupole (RFQ) and six drift tube linac (DTL) tanks are powered by seven 2.5 MW, 402.5 MHz klystrons and the four coupled cavity linac (CCL) cavities are powered by four 5.0 MW, 805 MHz klystrons. Eighty-one 550 kW, 805 MHz klystrons each drive a single cavity in the superconducting (SC) section of the linac. The high power radio frequency (HPRF) equipment was specified and procured by LANL and tested before delivery to ensure a smooth transition from installation to commissioning. Installation of RF equipment to support klystron operation in the 350-meter long klystron gallery started in June 2002. The final klystron was set in place in September 2004. Presently, all RF stations have been installed and high power testing has been completed. This paper reviews the progression of the installation and testing of the HPRF Sys...

  5. Simulation of RF power and multi-cusp magnetic field requirement for H{sup −} ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Manish [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Senecha, V.K., E-mail: kumarvsen@gmail.com [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Kumar, Rajnish; Ghodke, Dharmraj V. [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

    2016-12-01

    A computer simulation study for multi-cusp RF based H{sup −} ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H{sup −} Linac project for SNS applications. The average reaction rates for different reactions responsible for H{sup −} ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H{sup -} ion source for a maximum possible H{sup −} ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H{sup −} ion source like excited hydrogen molecular density, H{sup −} ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H{sup −} ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H{sup −} ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

  6. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  7. Current deposition profiles in advanced geometries

    International Nuclear Information System (INIS)

    Wright, J.C.; Phillips, C.K.; Bonoli, P.T.

    1997-01-01

    In advanced toroidal devices, plasma shaping can have a significant effect on quantities of interest, including the radio frequency (RF) deposited power and current. Most 2D RF modeling codes use a parameterization of current drive efficiencies to calculate fast wave driven currents. This parameterization is derived from a ray-tracing model in a low-beta model equilibrium. There are difficulties in applying it to a spectrum of waves, and it cannot account for multiple resonances and coherency effects between the electrons and the waves. By evaluating a formulation of the quasilinear diffusion coefficient in an arbitrary inhomogenous geometry with the fields from a full wave code, we address the effects of wave spectra, plasma inhomogeneity, and plasma profile on the evaluation of current deposition profiles. Current profiles are calculated directly from the quasilinear diffusion using the adjoint formulation, with the magnetic equilibrium specified consistently in both the adjoint routine and the full wave code. Results are benchmarked by comparing a power deposition calculation from conductivity to one from the quasilinear expression. RF driven current profiles for various devices, including tokamaks with different aspect ratios, will be presented. copyright 1997 American Institute of Physics

  8. CORPORATE FEED WITH DUAL SEGMENT CIRCULAR POLARIZED ARRAY RECTENNA FOR LOW POWER RF ENERGY HARVESTING

    Directory of Open Access Journals (Sweden)

    CHIA CHAO KANG

    2016-06-01

    Full Text Available This paper focuses on the investigation of the level powers that can be scavenged from the ambient environment by using corporate feed with dual segment circular polarized antenna array . It will converts the received power to direct current (DC. Being a circular polarized antenna, it has higher inductance per unit area, a good Q-factor and compact capability. The design of corporate-series feed rectenna array is to achieve a high gain antenna and maximize the RF energy received by the rectenna system at ultra low power levels. The entire structure was investigated using a combination of harmonic balance nonlinear analysis and full wave electromagnetic field analysis. The results show that 5.0 dBi gain for circular polarized antenna array can be achieved at frequency 956 MHz. When the input power of 20 dBm fed into the transmitting antenna, the maximum distance for radio frequency (RF harvesting is 5.32m. The output DC voltage for various values of incident RF power is also presented. There are noticed reasonable agreements between the simulated and measured result and the works concludes that the investigation of RF energy harvesting system was successful.

  9. High-power rf pulse compression with SLED-II at SLAC

    International Nuclear Information System (INIS)

    Nantista, C.

    1993-04-01

    Increasing the peak rf power available from X-band microwave tubes by means of rf pulse compression is envisioned as a way of achieving the few-hundred-megawatt power levels needed to drive a next-generation linear collider with 50--100 MW klystrons. SLED-II is a method of pulse compression similar in principal to the SLED method currently in use on the SLC and the LEP injector linac. It utilizes low-los resonant delay lines in place of the storage cavities of the latter. This produces the added benefit of a flat-topped output pulse. At SLAC, we have designed and constructed a prototype SLED-II pulse-compression system which operates in the circular TE 01 mode. It includes a circular-guide 3-dB coupler and other novel components. Low-power and initial high-power tests have been made, yielding a peak power multiplication of 4.8 at an efficiency of 40%. The system will be used in providing power for structure tests in the ASTA (Accelerator Structures Test Area) bunker. An upgraded second prototype will have improved efficiency and will serve as a model for the pulse compression system of the NLCTA (Next Linear Collider Test Accelerator)

  10. Dimensionally similar discharges with central rf heating on the DIII-D tokamak

    International Nuclear Information System (INIS)

    Petty, C.C.; Luce, T.C.; Pinsker, R.I.

    1993-04-01

    The scaling of L-mode heat transport with normalized gyroradius is investigated on the DIII-D tokamak using central rf heating. A toroidal field scan of dimensionally similar discharges with central ECH and/or fast wave heating show gyro-Bohm-like scaling both globally and locally. The main difference between these restats and those using NBI heating on DIII-D is that with rf heating the deposition profile is not very sensitive to the plasma density. Therefore central heating can be utilized for both the low-B and high-B discharges, whereas for NBI the power deposition is decidedly off-axis for the high-B discharge (i.e., high density)

  11. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Science.gov (United States)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  12. RF Energy Harvesting for Ubiquitous, Zero Power Wireless Sensors

    Directory of Open Access Journals (Sweden)

    Warda Saeed

    2018-01-01

    Full Text Available This paper presents a review of wireless power transfer (WPT followed by a comparison between ambient energy sources and an overview of different components of rectennas that are used for RF energy harvesting. Being less costly and environment friendly, rectennas are used to provide potentially inexhaustible energy for powering up low power sensors and portable devices that are installed in inaccessible areas where frequent battery replacement is difficult, if not impossible. The current challenges in rectenna design and a detailed comparison of state-of-the-art rectennas are also presented.

  13. Practical test of the LINAC4 RF power system

    CERN Document Server

    Schwerg, N

    2011-01-01

    The high RF power for the Linac4 accelerating structures will be generated by thirteen 1.3 MW klystrons, previously used for the CERN LEP accelerator, and six new klystrons of 2.8 MW all operating at a frequency of 352.2 MHz. The power distribution scheme features a folded magic tee feeding the power from one 2.8 MW klystron to two LEP circulators. We present first results from the Linac4 test place, validating the approach and the used components as well as reporting on the klystron re-tuning activities.

  14. Effects of rf power on electron density and temperature, neutral temperature, and Te fluctuations in an inductively coupled plasma

    International Nuclear Information System (INIS)

    Camparo, James; Fathi, Gilda

    2009-01-01

    Atomic clocks that fly on global-navigation satellites such as global positioning system (GPS) and Galileo employ light from low-temperature, inductively coupled plasmas (ICPs) for atomic signal generation and detection (i.e., alkali/noble-gas rf-discharge lamps). In this application, the performance of the atomic clock and the capabilities of the navigation system depend sensitively on the stability of the ICP's optical emission. In order to better understand the mechanisms that might lead to instability in these rf-discharge lamps, and hence the satellite atomic clocks, we studied the optical emission from a Rb/Xe ICP as a function of the rf power driving the plasma. Surprisingly, we found that the electron density in the plasma was essentially independent of increases in rf power above its nominal value (i.e., 'rf-power gain') and that the electron temperature was only a slowly varying function of rf-power gain. The primary effect of rf power was to increase the temperature of the neutrals in the plasma, which was manifested by an increase in Rb vapor density. Interestingly, we also found evidence for electron temperature fluctuations (i.e., fluctuations in the plasma's high-energy electron content). The variance of these fluctuations scaled inversely with the plasma's mean electron temperature and was consistent with a simple model that assumed that the total electron density in the discharge was independent of rf power. Taken as a whole, our results indicate that the electrons in alkali/noble-gas ICPs are little affected by slight changes in rf power and that the primary effect of such changes is to heat the plasma's neutral species.

  15. Control of hydrocarbon radicals and film deposition by using an RF Whistler wave discharge

    International Nuclear Information System (INIS)

    Mieno, Tetsu; Shoji, Tatsuo; Kadota, Kiyoshi.

    1991-10-01

    Production of hydrocarbon radicals is controlled by using an RF Whistler wave discharge in a low pressure region (∼0.1 Pa). Plasma density of 10 10 - 10 13 cm -3 , electron temperature of 2-20 eV is obtained for the discharge of admixture of Ar and small content of source gases (CH 4 , C 2 H 2 , CO). Spectroscopic measurement indicates that densities of CH and H radicals and deposition rate of amorphous carbon:H film increase with electron density, electron temperature and source gas pressure. The etching effect of H atoms influences on the deposition rate and a high deposition rate (90 μm/hr for CO/Ar discharge) is obtained even in a low neutral pressure discharge. (author)

  16. RF Wireless Power Transfer: Regreening Future Networks

    OpenAIRE

    Tran, Ha-Vu; Kaddoum, Georges

    2017-01-01

    Green radio communication is an emerging topic since the overall footprint of information and communication technology (ICT) services is predicted to triple between 2007 and 2020. Given this research line, energy harvesting (EH) and wireless power transfer (WPT) networks can be evaluated as promising approaches. In this paper, an overview of recent trends for future green networks on the platforms of EH and WPT is provided. By rethinking the application of radio frequency (RF)-WPT, a new conc...

  17. Battery-Powered RF Pre-Ionization System for the Caltech Magnetohydrodynamically-Driven Jet Experiment: RF Discharge Properties and MHD-Driven Jet Dynamics

    Science.gov (United States)

    Chaplin, Vernon H.

    This thesis describes investigations of two classes of laboratory plasmas with rather different properties: partially ionized low pressure radiofrequency (RF) discharges, and fully ionized high density magnetohydrodynamically (MHD)-driven jets. An RF pre-ionization system was developed to enable neutral gas breakdown at lower pressures and create hotter, faster jets in the Caltech MHD-Driven Jet Experiment. The RF plasma source used a custom pulsed 3 kW 13.56 MHz RF power amplifier that was powered by AA batteries, allowing it to safely float at 4-6 kV with the cathode of the jet experiment. The argon RF discharge equilibrium and transport properties were analyzed, and novel jet dynamics were observed. Although the RF plasma source was conceived as a wave-heated helicon source, scaling measurements and numerical modeling showed that inductive coupling was the dominant energy input mechanism. A one-dimensional time-dependent fluid model was developed to quantitatively explain the expansion of the pre-ionized plasma into the jet experiment chamber. The plasma transitioned from an ionizing phase with depressed neutral emission to a recombining phase with enhanced emission during the course of the experiment, causing fast camera images to be a poor indicator of the density distribution. Under certain conditions, the total visible and infrared brightness and the downstream ion density both increased after the RF power was turned off. The time-dependent emission patterns were used for an indirect measurement of the neutral gas pressure. The low-mass jets formed with the aid of the pre-ionization system were extremely narrow and collimated near the electrodes, with peak density exceeding that of jets created without pre-ionization. The initial neutral gas distribution prior to plasma breakdown was found to be critical in determining the ultimate jet structure. The visible radius of the dense central jet column was several times narrower than the axial current channel

  18. Optimal conditions for the deposition of novel anticorrosive coatings by RF magnetron sputtering for aluminum alloy AA6082

    International Nuclear Information System (INIS)

    Brachetti-Sibaja, S.B.; Domínguez-Crespo, M.A.; Rodil, S.E.; Torres-Huerta, A.M.

    2014-01-01

    Highlights: • Non-conventional technique for improving the corrosion resistance of aluminum alloys. • Effect of the deposition parameters: power, substrate temperature and deposition time. • Changes in the crystallinity of the coatings are observed with the temperature. • The structure of these coatings is found to be dependent on the nature of the substrate. • La coatings can provide a better physical barrier to inhibit the corrosion attack. - Abstract: Cerium and lanthanum coatings were deposited on glass, silicon (1 0 0), and aluminum alloy by RF magnetron sputtering in which several experimental conditions such as power, substrate temperature, and deposition time were varied, using pure CeO 2 and La 2 O 3 targets. The effect of deposition parameters on the bonding structure, surface morphology and properties against corrosion of rare earth (RE) coatings formed on metallic substrate was reported. The microstructure and chemistry of the thin film were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS); whereas their use as corrosion resistant coatings was studied in aqueous NaCl solution (3.0 wt%) by using polarization curves. Variations in these properties were observed by increasing the substrate temperature which modifies the crystallinity of the rare earth coatings. XRD and XPS findings indicate that the cerium coatings are composed by CeO 2 and a significant quantity of Ce 2 O 3 due to oxygen deficiency in the sputtering chamber, whereas La 2 O 3 /La(OH) 3 and some La intermetallic compounds are detected in the lanthanum films. Variations in the E corr and I corr were found as a function of the thickness, texture, and morphology of the as-prepared coatings

  19. Very long pulse high-RF power test of a lower hybrid frequency antenna module

    International Nuclear Information System (INIS)

    Goniche, M.; Brossaud, J.; Barral, C.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.

    1994-03-01

    Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed ∼ 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs

  20. Very long pulse high-RF power test of a lower hybrid frequency antenna module

    Energy Technology Data Exchange (ETDEWEB)

    Goniche, M; Brossaud, J; Barral, C; Berger-By, G; Bibet, Ph; Poli, S; Rey, G; Tonon, G [Association Euratom-CEA, Centre d` Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Seki, M; Obara, K [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

    1994-03-01

    Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed {approx} 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs.

  1. Active high-power RF pulse compression using optically switched resonant delay lines

    International Nuclear Information System (INIS)

    Tantawi, S.G.; Ruth, R.D.; Vlieks, A.E.

    1996-11-01

    The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE 01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability

  2. High power testing of a 17 GHz photocathode RF gun

    International Nuclear Information System (INIS)

    Chen, S.C.; Danly, B.G.; Gonichon, J.

    1995-01-01

    The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell (π mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design

  3. Rf-to-dc power converters for wireless powering

    KAUST Repository

    Ouda, Mahmoud Hamdy; Salama, Khaled N.

    2016-01-01

    feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a

  4. Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

    Science.gov (United States)

    Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

    2011-01-01

    A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  5. LTE modem power consumption, SAR and RF signal strength emulation

    DEFF Research Database (Denmark)

    Musiige, Deogratius; Vincent, Laulagnet; Anton, François

    2012-01-01

    This paper presents a new methodology for emulating the LTE modem power consumption, emitted SAR and RF signal strength when transmitting an LTE signal. The inputs of the methodology are: modem logical/protocol commands, time advance, near-field specifier, and antenna characteristics. The power...... emulation model(s) are computed by a two layer 451 neural network based on physical power measurements. SAR is emulated by polynomial interpolation models based on FDTD simulations. The accuracies of the mathematical function approximations for the emulation models of power and SAR are 5.19% and 3...

  6. Design and RF test result of High Power Hybrid Combiner for Helicon Wave Current Drive in KSTAR Plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Park, S. Y.; Kim, H. J.; Wi, H. H.; Wang, S. J.; Kwak, J. G. [NFRI, Daejeon (Korea, Republic of)

    2016-05-15

    200 kW RF power will be injected to plasmas through the traveling wave antenna after combining four klystrons output powers using three hybrid combiners. Each klystron produces 60 kW output at the frequency of 500 MHz. RF power combiners commonly used to divide or combine output powers for various rf and microwave applications. It is divided into several types according to the design type such as Wilkinson combiner, radial and quadrature hybrid combiner. We designed high power hybrid combiners using 6-1/8 inch coaxial line. The power combiner has many advantages such as high isolation, low insertion loss and high power handling capability. In this paper design and rf test results of high power combiners will be described. High power combiners using three coaxial hybrid couplers will be utilized for effectively combining of 500 MHz, 200 kW output powers generated by four klystrons. We have designed, fabricated, and tested a 6-1/8 inch coaxial hybrid combiners at 500 MHz for efficiently off-axis Helicon wave current drive in KSTAR. Simulation and test results of high power coaxial hybrid combiners are good agreement.

  7. Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

    Science.gov (United States)

    Dogan, Numan S.

    2003-01-01

    The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

  8. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  9. Development and performance test of a new high power RF window in S-band PLS-II LINAC

    Science.gov (United States)

    Hwang, Woon-Ha; Joo, Young-Do; Kim, Seung-Hwan; Choi, Jae-Young; Noh, Sung-Ju; Ryu, Ji-Wan; Cho, Young-Ki

    2017-12-01

    A prototype of RF window was developed in collaboration with the Pohang Accelerator Laboratory (PAL) and domestic companies. High power performance tests of the single RF window were conducted at PAL to verify the operational characteristics for its application in the Pohang Light Source-II (PLS-II) linear accelerator (Linac). The tests were performed in the in-situ facility consisting of a modulator, klystron, waveguide network, vacuum system, cooling system, and RF analyzing equipment. The test results with Stanford linear accelerator energy doubler (SLED) have shown no breakdown up to 75 MW peak power with 4.5 μs RF pulse width at a repetition rate of 10 Hz. The test results with the current operation level of PLS-II Linac confirm that the RF window well satisfies the criteria for PLS-II Linac operation.

  10. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

    Directory of Open Access Journals (Sweden)

    Abdul Manaf Hashim

    2011-08-01

    Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  11. Studies in RF power communication, SAR, and temperature elevation in wireless implantable neural interfaces.

    Directory of Open Access Journals (Sweden)

    Yujuan Zhao

    Full Text Available Implantable neural interfaces are designed to provide a high spatial and temporal precision control signal implementing high degree of freedom real-time prosthetic systems. The development of a Radio Frequency (RF wireless neural interface has the potential to expand the number of applications as well as extend the robustness and longevity compared to wired neural interfaces. However, it is well known that RF signal is absorbed by the body and can result in tissue heating. In this work, numerical studies with analytical validations are performed to provide an assessment of power, heating and specific absorption rate (SAR associated with the wireless RF transmitting within the human head. The receiving antenna on the neural interface is designed with different geometries and modeled at a range of implanted depths within the brain in order to estimate the maximum receiving power without violating SAR and tissue temperature elevation safety regulations. Based on the size of the designed antenna, sets of frequencies between 1 GHz to 4 GHz have been investigated. As expected the simulations demonstrate that longer receiving antennas (dipole and lower working frequencies result in greater power availability prior to violating SAR regulations. For a 15 mm dipole antenna operating at 1.24 GHz on the surface of the brain, 730 uW of power could be harvested at the Federal Communications Commission (FCC SAR violation limit. At approximately 5 cm inside the head, this same antenna would receive 190 uW of power prior to violating SAR regulations. Finally, the 3-D bio-heat simulation results show that for all evaluated antennas and frequency combinations we reach FCC SAR limits well before 1 °C. It is clear that powering neural interfaces via RF is possible, but ultra-low power circuit designs combined with advanced simulation will be required to develop a functional antenna that meets all system requirements.

  12. Effect of RF Interference on the Security-Reliability Trade-off Analysis of Multiuser Mixed RF/FSO Relay Networks with Power Allocation

    KAUST Repository

    Abd El-Malek, Ahmed

    2017-03-27

    In this paper, the impact of radio frequency (RF) cochannel interference (CCI) on the performance of multiuser mixed RF/free-space optical (FSO) relay network with opportunistic user scheduling under eavesdropping attack is studied. The considered system includes multiple users, one decode-and-forward relay, one destination, and an eavesdropper. In the analysis, the RF/FSO channels follow Nakagami-m/Gamma-Gamma fading models, respectively, with pointing errors on the FSO link. Exact closed-form expression for the system outage probability is derived. Then, an asymptotic expression for the outage probability is obtained at the high signal-to-interference-plus-noise ratio regime to get more insights on the system performance. Moreover, the obtained results are used to find the optimal transmission power in different turbulence conditions. The secrecy performance is studied in the presence of CCI at both the authorized relay and eavesdropper, where closed-form expressions are derived for the intercept probability. The physical layer security performance is enhanced using cooperative jamming models, where new closed-form expressions are derived for the intercept probability. Another power allocation optimization problem is formulated to find the optimal transmission and jamming powers. The derived analytical formulas are supported by numerical results to clarify the main contributions of this paper.

  13. Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

    2005-01-01

    Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

  14. Tilt optimized flip uniformity (TOFU) RF pulse for uniform image contrast at low specific absorption rate levels in combination with a surface breast coil at 7 Tesla

    NARCIS (Netherlands)

    van Kalleveen, Irene M. L.; Boer, VO; Luijten, Peter R.; Klomp, DWJ

    Purpose: Going to ultrahigh field MRI (e. g., 7 Tesla [ T]), the nonuniformity of the B_1 field and the increased radiofrequency (RF) power deposition become challenging. While surface coils improve the power efficiency in B_1, its field remains nonuniform. In this work, an RF pulse was designed

  15. Volterra series based predistortion for broadband RF power amplifiers with memory effects

    Institute of Scientific and Technical Information of China (English)

    Jin Zhe; Song Zhihuan; He Jiaming

    2008-01-01

    RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

  16. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  17. Technology development of solid state rf systems at 350 MHz and 325 MHz for RF accelerator

    International Nuclear Information System (INIS)

    Rama Rao, B.V.; Mishra, J.K.; Pande, Manjiri; Gupta, S.K.

    2011-01-01

    For decades vacuum tubes and klystrons have been used in high power application such as RF accelerators and broadcast transmitters. However, now, the solid-state technology can give power output in kilowatt regime. Higher RF power output can be achieved by combining several solid-state power amplifier modules using power combiners. This technology presents several advantages over traditional RF amplifiers, such as simpler start-up procedure, high modularity, high redundancy and flexibility, elimination of high voltage supplies and high power circulators, low operational cost, online maintenance without shut down of RF power station and no warm up time. In BARC, solid state amplifier technology development is being done both at 350 MHz and 325 MHz using RF transistors such as 1 kW LDMOS and 350 Watt VDMOS. Topology of input and output matching network in RF modules developed, consist of two L type matching sections with each section having a combination of series micro-strip line and parallel capacitor. The design is of equal Q for both the sections and of 25 ohm characteristics impedance of micro strip lines. Based on this, lengths of micro strips lines and values of shunt capacitors have been calculated. The calculated and simulated values of network elements have been compared. Similarly power combiners have been designed and developed based on Wilkinson techniques without internal resistors and using coaxial technology. This paper presents design and development of RF power amplifier modules, associated power combiner technologies and then integrated RF power amplifier. (author)

  18. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  19. Suppression of multipacting in high power RF couplers operating with superconducting cavities

    Energy Technology Data Exchange (ETDEWEB)

    Ostroumov, P.N., E-mail: ostroumov@frib.msu.edu [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States); Kazakov, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Morris, D.; Larter, T.; Plastun, A.S.; Popielarski, J.; Wei, J.; Xu, T. [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States)

    2017-06-01

    Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.

  20. Design of RF energy harvesting platforms for power management unit with start-up circuits

    Science.gov (United States)

    Costanzo, Alessandra; Masotti, Diego

    2013-12-01

    In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

  1. Design of RF energy harvesting platforms for power management unit with start-up circuits

    International Nuclear Information System (INIS)

    Costanzo, Alessandra; Masotti, Diego

    2013-01-01

    In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion

  2. ITO films deposited by rf-PERTE on unheated polymer substrates--properties dependence on In-Sn alloy composition

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.

    2004-01-01

    The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20 wt.%. The average thickness of the ITO films is of about 90 nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: an average visible transmittance of 80% and an electrical resistivity of 1.6x10 -3 Ω cm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6x10 -4 Ω cm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility

  3. Design and development of power supplies for high power IOT based RF amplifier

    International Nuclear Information System (INIS)

    Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

    2013-01-01

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  4. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  5. Solid-state high voltage modulator and its application to rf source high voltage power supplies

    International Nuclear Information System (INIS)

    Tooker, J.F.; Huynh, P.; Street, R.W.

    2009-01-01

    A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

  6. Design of power supply system for the prototype RF-driven negative ion source for neutral beam injection application

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Caichao; Hu, Chundong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate school, University of Science and Technology of China, Hefei 230026 (China); Wei, Jianglong, E-mail: jlwei@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xie, Yahong; Xu, Yongjian; Liang, Lizhen; Chen, Shiyong; Liu, Sheng; Liu, Zhimin; Xie, Yuanlai [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)

    2017-04-15

    Highlights: • A supporting power supply system was designed in details for a RF-driven prototype negative ion source at ASIPP. • The RF power supply for plasma generation adopts an all-solid-state power supply structure. • The extraction grid power supply adopts the pulse step modulator (PSM) technology. - Abstract: In order to study the generation and extraction of negative ions for neutral beam injection application, a prototype RF-driven negative ion source and the corresponding test bed are under construction at Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP). The target of the negative ion source is extracting a negation ion beam of 350 A/m{sup 2} for 3600 s plasma duration and 100 s beam duration. According to the required parameters of test bed, the design of power supply system is put forward for earlier study. In this paper, the performance requirements and design schemes of RF power supply for plasma generation, impedance matching network, bias voltage power supply, and extraction voltage power supply for negative beam extraction are introduced in details. The schemes provide a reference for the construction of power supply system and lay a foundation for the next phase of experimental operation.

  7. Electron beam gun with kinematic coupling for high power RF vacuum devices

    Science.gov (United States)

    Borchard, Philipp

    2016-11-22

    An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composed of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.

  8. Powering Autonomous Sensors An Integral Approach with Focus on Solar and RF Energy Harvesting

    CERN Document Server

    Penella-López, María Teresa

    2011-01-01

    Autonomous sensors transmit data and power their electronics without using cables. They can be found in e.g. wireless sensor networks (WSNs) or remote acquisition systems. Although primary batteries provide a simple design for powering autonomous sensors, they present several limitations such as limited capacity and power density, and difficulty in predicting their condition and state of charge. An alternative is to extract energy from the ambient (energy harvesting). However, the reduced dimensions of most autonomous sensors lead to a low level of available power from the energy transducer. Thus, efficient methods and circuits to manage and gather the energy are a must. An integral approach for powering autonomous sensors by considering both primary batteries and energy harvesters is presented. Two rather different forms of energy harvesting are also dealt with: optical (or solar) and radiofrequency (RF). Optical energy provides high energy density, especially outdoors, whereas RF remote powering is possibly...

  9. A high-power rf linear accelerator for FELS [free-electron lasers

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Watson, J.M.

    1987-01-01

    This paper describes the design of a high average current rf linear accelerator suitable for driving short-wavelength free-electron lasers (FEL). It is concluded that the design of a room-temperature rf linear acelerator that can meet the stringent requirements of a high-power short-wavelength FEL appears possible. The accelerator requires the use of an advanced photoelectric injector that is under development; the accelerator components, however, do not require appreciable development. At these large beam currents, low-frequency, large-bore room-temperature cavities can be highly efficient and give all specified performance with minimal risk. 20 refs

  10. Suppressing RF breakdown of powerful backward wave oscillator by field redistribution

    Directory of Open Access Journals (Sweden)

    W. Song

    2012-03-01

    Full Text Available An over mode method for suppressing the RF breakdown on metal surface of resonant reflector cavity in powerful backward wave oscillator is investigated. It is found that the electric field is redistributed and electron emission is restrained with an over longitudinal mode cavity. Compared with the general device, a frequency band of about 5 times wider and a power capacity of at least 1.7 times greater are obtained. The results were verified in an X-band high power microwave generation experiment with the output power near 4 gigawatt.

  11. Developments and directions in 200 MHz very high power RF at LAMPF

    International Nuclear Information System (INIS)

    Cliff, R.; Bush, E.D.; DeHaven, R.A.; Harris, H.W.; Parsons, M.

    1991-01-01

    The Los Alamos Meson Physics Facility (LAMPF), is a linear particle accelerator a half-mile long. It produces an 800 million electron- volt hydrogen-ion beam at an average current of more than one milliamp. The first RF section of the accelerator consists of four Alvarez drift-tube structures. Each of these structures is excited by an amplifier module at a frequency of 201.25 MHz. These amplifiers operate at a duty of 13 percent or more and at peak pulsed power levels of about 2.5 million watts. The second RF accelerator section consists of forty-four side-coupled-cavity structures. Each of these is excited by an amplifier module at a frequency of 805 MHz. These amplifiers operate at a duty of up to 12 percent and at peak pulsed power levels of about 1.2 million watts. The relatively high average beam current in the accelerator places a heavy demand upon components in the RF systems. The 201-MHz modules have always required a large share of maintenance efforts. In recent years, the four 201.25 MHz modules have been responsible for more than twice as much accelerator down-time as have the forty-four 805 MHz modules. This paper reviews recent, ongoing, and planned improvements in the 201-MHz systems. The Burle Industries 7835 super power triode is used in the final power amplifiers of each of the 201-MHz modules. This tube has been modified for operation at LAMPF by the addition of Penning ion vacuum''pumps.'' This has enabled more effective tube conditioning and restarting. A calorimetry system of high accuracy is in development to monitor tube plate-power dissipation

  12. Reliability impact of RF tube technology for the NPB

    International Nuclear Information System (INIS)

    Bueck, J.C.

    1989-01-01

    Two reliability options, redundancy and operating margin, are examined to determine their effect on power system configurations using RF tube technology (klystron and klystrode) powered Neutral Particle Beam weapons. Redundance is addressed by providing an additional identical RF tube to the tubes required to power an accelerator RF element (DTL section, RFQ, or CCL). RF elements do not share RF power with other RF elements. Operating margin provides increased reliability by sizing the RF tubes such that tube operating levels may be increased compensate for the loss of a tube. It is shown that power system mass is affected by the choice of reliability measures, that higher power tubes coupled with higher power RF elements may mitigate mass increases, and that redundancy appears preferable to operating margin as a method of improving RF system reliability

  13. Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

    Science.gov (United States)

    Thakur, S. K.; Kumar, Y.

    2018-05-01

    This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

  14. Dynamics of r.f. production of Stellarator plasmas in the ion cyclotron range of frequency

    International Nuclear Information System (INIS)

    Moiseenko, V.E.; Lysoivan, A.I.; Kasilov, S.V.; Plyusnin, V.V.

    1995-01-01

    The present study investigated numerically the process of r.f. production of plasma in the URAGAN-3M torsatron in the frequency range below the ion cyclotron frequency (ω ci ). The dynamics of r.f. plasma build-up at the stages of neutral gas burnout and plasma heating were studied using a zero-dimensional transport code, in which the plasma confinement law was determined by large helical device scaling. Two models for input r.f. power were used. In the first case, the r.f. power absorbed by the electrons was computed by a one-dimensional r.f. code solving Maxwell's boundary problem equations. The mechanisms of electron heating through direct excitation of the slow wave (SW) by antennae as well as the conversion of fast wave (FW) into SW in the vicinity of Alfven resonance (scenario of Alfven heating) were taken into account in the computations. In the second case, an 'ideal' model of r.f. power deposition onto the electrons as a linear function of plasma density was employed. A noticeable difference in plasma production dynamics computed for these two cases was found. Better agreement with experimental data obtained from the URAGAN-3M torsatron was found for the first case resulting from combination of the one-dimensional r.f. and zero-dimensional transport codes. ((orig.))

  15. Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Bargallo, E., E-mail: enric.bargallo-font@upc.edu [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Giralt, A.; Martinez, G. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Weber, M.; Regidor, D.; Arroyo, J.M. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain); Abal, J.; Dies, J.; Tapia, C.; De Blas, A. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Mendez, P.; Ibarra, A.; Molla, J. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain)

    2013-10-15

    Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives.

  16. Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

    International Nuclear Information System (INIS)

    Bargallo, E.; Giralt, A.; Martinez, G.; Weber, M.; Regidor, D.; Arroyo, J.M.; Abal, J.; Dies, J.; Tapia, C.; De Blas, A.; Mendez, P.; Ibarra, A.; Molla, J.

    2013-01-01

    Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives

  17. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  18. High power test of RF window and coaxial line in vacuum

    International Nuclear Information System (INIS)

    Sun, D.; Champion, M.; Gormley, M.; Kerns, Q.; Koepke, K.; Moretti, A.

    1993-01-01

    Primary rf input couplers for the superconducting accelerating cavities of the TESLA electron linear accelerator test to be performed at DESY, Hamburg, Germany are under development at both DESY and Fermilab. The input couplers consist of a WR650 waveguide to coaxial line transition with an integral ceramic window, a coaxial connection to the superconducting accelerating cavity with a second ceramic window located at the liquid nitrogen heat intercept location, and bellows on both sides of the cold window to allow for cavity motion during cooldown, coupling adjustments and easier assembly. To permit in situ high peak power processing of the TESLA superconducting accelerating cavities, the input couplers are designed to transmit nominally 1 ms long, 2 MW peak, 1.3 GHz rf pulses from the WR650 waveguide at room temperature to the cavities at 1.8 K. The coaxial part of the Fermilab TESLA input coupler design has been tested up to 1.7 MW using the prototype 805 MHz rf source located at the A0 service building of the Tevatron. The rf source, the testing system and the test results are described

  19. RF-driven tokamak reactor with sub-ignited, thermally stable operation

    International Nuclear Information System (INIS)

    Harten, L.P.; Bers, A.; Fuchs, V.; Shoucri, M.M.

    1981-02-01

    A Radio-Frequency Driven Tokamak Reactor (RFDTR) can use RF-power, programmed by a delayed temperature measurement, to thermally stabilize a power equilibrium below ignition, and to drive a steady state current. We propose the parameters for such a device generating approx. = 1600 MW thermal power and operating with Q approx. = 40 (= power out/power in). A one temperature zero-dimensional model allows simple analytical formulation of the problem. The relevance of injected impurities for locating the equilibrium is discussed. We present the results of a one-dimensional (radial) code which includes the deposition of the supplementary power, and compare with our zero-dimensional model

  20. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  1. Design, development and operational experience of radio frequency (RF) power systems/technologies for LEHIPA and 400 keV RFQ

    International Nuclear Information System (INIS)

    Pande, Manjiri; Shrotriya, Sandip; Patel, Niranjan

    2015-01-01

    The important technology development for ion accelerators of 'accelerator driven sub critical reactor system (ADS) is being done under the program of Department of Atomic Energy (DAE). In BARC (BARC) of DAE, technology development of 400 keV radio frequency quadrupole (RFQ) accelerator is done and a 20 MeV - low energy high intensity proton accelerator (LEHIPA) is under development. A 400 KeV deuteron RFQ accelerator is already developed at BARC and its 60 kW radio frequency (RF) power system required for beam acceleration has been designed, developed and tested both in CW mode and in pulse mode for full power of 60 leW. It has been successfully integrated with RFQ via 6-1/8'', 50 ohm RF transmission line, to accelerate proton beam up to 200 KeV energy and deuteron beam to 400 KeV energy. LEHIPA requires about 3 MW of RF power for its operation. So, three 1 MW, 352 MHz RF systems based on klystron will be developed for RFQ and two DTLs. The klystron based RF system for 3 MeV RFQ is under commissioning. Its various subsystems like energy less and insulated gate bipolar transistor (IGBT) based high voltage and low voltage bias supplies, a critical and fast protection and control system - handling various types of field signals, fast acting hard wired instrumentation circuits for critical signals, 100 kV crowbar with its circuits, pulsing circuits and RF circuits have been successfully designed, developed and integrated with klystron. Latest technology development of solid state RF amplifiers at 325 MHz and 350 MHz for normal and super conducting accelerators has attained a certain power level. This paper will discuss all these high power RF systems in detail. (author)

  2. Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

    KAUST Repository

    Rakia, Tamer; Yang, Hong-Chuan; Gebali, Fayez; Alouini, Mohamed-Slim

    2016-01-01

    Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non

  3. Microscopic investigation of RF surfaces of 3 GHz niobium accelerator cavities following RF processing

    International Nuclear Information System (INIS)

    Graber, J.; Barnes, P.; Flynn, T.; Kirchgessner, J.; Knobloch, J.; Moffat, D.; Muller, H.; Padamsee, H.; Sears, J.

    1993-01-01

    RF processing of Superconducting accelerating cavities is achieved through a change in the electron field emission (FE) characteristics of the RF surface. The authors have examined the RF surfaces of several single-cell 3 GHz cavities, following RF processing, in a Scanning Electron Microscope (SEM). The RF processing sessions included both High Peak Power (P ≤ 50 kW) pulsed processing, and low power (≤ 20 W) continuous wave processing. The experimental apparatus also included a thermometer array on the cavity outer wall, allowing temperature maps to characterize the emission before and after RF processing gains. Multiple sites have been located in cavities which showed improvements in cavity behavior due to RF processing. Several SEM-located sites can be correlated with changes in thermometer signals, indicating a direct relationship between the surface site and emission reduction due to RF processing. Information gained from the SEM investigations and thermometry are used to enhance the theoretical model of RF processing

  4. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    Science.gov (United States)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  5. High-power RF window design for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Neubauer, M.; Hodgson, J.; Ng, C.; Schwarz, H.; Skarpaas, K.; Kroll, N.; Rimmer, R.

    1994-06-01

    We describe the design of RF windows to transmit up to 500 kW CW to the PEP-II 476 MHz cavities. RF analysis of the windows using high-frequency simulation codes are described. These provide information about the power loss distribution in the ceramic and tim matching properties of the structure. Finite-element analyses of the resulting temperature distribution and thermal stresses are presented. Fabrication methods including a proposed scheme to compensate for thermal expansion s are discussed and hardware tests to validate this approach are described. The effects of surface coatings (intentional and otherwise) and the application of air cooling are considered

  6. Two-Way Multiuser Mixed RF/FSO Relaying: Performance Analysis and Power Allocation

    KAUST Repository

    Al-Eryani, Yasser F.

    2018-03-21

    In this paper, the performance of two-way multiuser mixed radio frequency/free space optical (RF/FSO) relay networks with opportunistic user scheduling and asymmetric channel fading is studied. RF links are used to conduct data transmission between users and relay node, while a FSO link is used to conduct data transmission on the last-mile communication link between the relay node and base station. The RF links are assumed to follow a Rayleigh fading model, while the FSO links are assumed to follow a unified Gamma-Gamma atmospheric turbulence fading model with pointing error. First, closed-form expressions for the exact outage probability, asymptotic (high signal-to-noise ratio) outage probability, average symbol error rate, and average ergodic channel capacity are derived assuming a heterodyne detection scheme. The asymptotic results are used to conduct a power optimization algorithm where expressions for optimal transmission power values for the transmitting nodes are provided. Additionally, performance comparisons between the considered two-way-relaying (TWR) network and the oneway- relaying (OWR) network are provided and discussed. Also, the impact of several system parameters, including number of users, pointing errors, atmospheric turbulence conditions, and outage probability threshold on the overall network performance are investigated. All the theoretical results are validated by Monte Carlo simulations. The results show that the TWR scheme almost doubles the network ergodic capacity compared to that of the OWR scheme with the same outage performance. Additionally, it is shown that under weak-to-moderate weather turbulence conditions and small pointing error, the outage probability is dominated by the RF downlink with a neglected effect for the user selection process at the RF uplink transmission. However, for severe pointing error, the outage probability is dominated by the FSO uplink/downlink transmission.

  7. High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

    International Nuclear Information System (INIS)

    Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

    1991-01-01

    Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

  8. High RF power test of a CFC antenna module for lower hybrid current drive

    International Nuclear Information System (INIS)

    Maebara, S.; Seki, M.; Ikeda, Y.; Kiyono, K.; Suganuma, K.; Imai, T.; Goniche, M.; Bibet, Ph.; Brossaud, J.; Cano, V.; Kazarian-Vibert, F.; Froissard, P.; Rey, G.

    1998-01-01

    A mock-up of a 3.7 GHz Lower Hybrid Current Drive (LHCD) antenna module was fabricated from Carbon Fibre Composite (CFC) for the development of heat resistive low Z front facing the plasma. This 2 divided waveguide module is made from CFC plates and rods which are Cu-plated to reduce the RF losses. The withstand-voltage, the RF properties and the outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. A reference module made from Dispersion Strengthened Copper (DSC) was also fabricated. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns on the CFC module. It was also checked that the highest power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H2 at a pressure of 5 x 10 -2 Pa. During a long pulse, the power reflection coefficient remains low in the 0.8-1.3 % range and no significant change in the reflection coefficient is measured after the thermal cycling provided by the long pulse operation. From thermocouple measurements, RF losses of the copper coated CFC and the DSC modules were compared. No significant differences were measured. From pressure measurements, it was found that the outgassing rate of Cu-plated CFC is about 6-7 times larger than of DSC at 300 deg.C. It is concluded that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (author)

  9. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  10. OFDM RF power-fading circumvention for long-reach WDM-PON.

    Science.gov (United States)

    Chow, C W; Yeh, C H; Sung, J Y

    2014-10-06

    We propose and demonstrate an orthogonal frequency division multiplexing (OFDM) radio-frequency (RF) power-fading circumvention scheme for long-reach wavelength-division-multiplexed passive-optical-network (LR-WDM-PON); hence the same capacity of 40 Gb/s can be provided to all the optical-networking-units (ONUs) in the LR-WDM-PON. Numerical analysis and proof-of-concept experiment are performed.

  11. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    International Nuclear Information System (INIS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

  12. Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

    2013-01-01

    A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

  13. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  14. Ultracompact Implantable Design With Integrated Wireless Power Transfer and RF Transmission Capabilities.

    Science.gov (United States)

    Sun, Guilin; Muneer, Badar; Li, Ying; Zhu, Qi

    2018-04-01

    This paper presents an ultracompact design of biomedical implantable devices with integrated wireless power transfer (WPT) and RF transmission capabilities for implantable medical applications. By reusing the spiral coil in an implantable device, both RF transmission and WPT are realized without the performance degradation of both functions in ultracompact size. The complete theory of WPT based on magnetic resonant coupling is discussed and the design methodology of an integrated structure is presented in detail, which can guide the design effectively. A system with an external power transmitter and implantable structure is fabricated to validate the proposed approach. The experimental results show that the implantable structure can receive power wirelessly at 39.86 MHz with power transfer efficiency of 47.2% and can also simultaneously radiate at 2.45 GHz with an impedance bandwidth of 10.8% and a gain of -15.71 dBi in the desired direction. Furthermore, sensitivity analyses are carried out with the help of experiment and simulation. The results reveal that the system has strong tolerance to the nonideal conditions. Additionally, the specific absorption rate distribution is evaluated in the light of strict IEEE standards. The results reveal that the implantable structure can receive up to 115 mW power from an external transmitter and radiate 6.4 dB·m of power safely.

  15. Medium and Short Wave RF Energy Harvester for Powering Wireless Sensor Networks.

    Science.gov (United States)

    Leon-Gil, Jesus A; Cortes-Loredo, Agustin; Fabian-Mijangos, Angel; Martinez-Flores, Javier J; Tovar-Padilla, Marco; Cardona-Castro, M Antonia; Morales-Sánchez, Alfredo; Alvarez-Quintana, Jaime

    2018-03-03

    Internet of Things (IoT) is an emerging platform in which every day physical objects provided with unique identifiers are connected to the Internet without requiring human interaction. The possibilities of such a connected world enables new forms of automation to make our lives easier and safer. Evidently, in order to keep billions of these communicating devices powered long-term, a self-sustainable operation is a key point for realization of such a complex network. In this sense, energy-harvesting technologies combined with low power consumption ICs eliminate the need for batteries, removing an obstacle to the success of the IoT. In this work, a Radio Frequency (RF) energy harvester tuned at AM broadcast has been developed for low consumption power devices. The AM signals from ambient are detected via a high-performance antenna-free LC circuit with an efficiency of 3.2%. To maximize energy scavenging, the RF-DC conversion stage is based on a full-wave Cockcroft-Walton voltage multiplier (CWVM) with efficiency up to 90%. System performance is evaluated by rating the maximum power delivered into the load via its output impedance, which is around 62 μW, although power level seems to be low, it is able to power up low consumption devices such as Leds, portable calculators and weather monitoring stations.

  16. Development of L-band pillbox RF window

    International Nuclear Information System (INIS)

    Takeuchi, Y.; Fukuda, S.; Hisamatsu, H.; Saito, Y.; Takahashi, A.

    1994-01-01

    A pillbox RF output window was developed for the L-band pulsed klystron for the Japanese Hadron Project (JHP) 1-GeV proton linac. The window was designed to withstand a peak RF power of 6 MW, where the pulse width is 600 μsec and the repetition rate is 50 Hz. A high power model was fabricated using an alumina ceramic which has a low loss tangent of 2.5x10 -5 . A high power test was successfully performed up to a 113 kW RF average power with a 4 MW peak power, a 565 μsec pulse width and a 50 Hz repetition rate. By extrapolating the data of this high power test, the temperature rise of the ceramic is estimated low enough at the full RF power of 6 MW. Thus this RF window is expected to satisfy the specifications of the L-band Klystron. (author)

  17. Microfluidic stretchable RF electronics.

    Science.gov (United States)

    Cheng, Shi; Wu, Zhigang

    2010-12-07

    Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

  18. In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition tool

    International Nuclear Information System (INIS)

    Meng Liang; Raju, Ramasamy; Flauta, Randolph; Shin, Hyungjoo; Ruzic, David N.; Hayden, Douglas B.

    2010-01-01

    Using a newly designed and built plasma diagnostic system, the plasma parameters were investigated on a commercial 200 mm high-power hollow cathode magnetron (HCM) physical vapor deposition tool using Ta target under argon plasma. A three dimensional (3D) scanning radio frequency (rf)-compensated Langmuir probe was constructed to measure the spatial distribution of the electron temperature (T e ) and electron density (n e ) in the substrate region of the HCM tool at various input powers (2-15 kW) and pressures (10-70 mTorr). The T e was in the range of 1-3 eV, scaling with decreasing power and decreasing pressure. Meanwhile, n e was in the range of 4x10 10 -1x10 12 cm -3 scaling with increasing power and decreasing pressure. As metal deposits on the probe during the probe measurements, a self-cleaning plasma cup was designed and installed in the chamber to clean the tungsten probe tip. However, its effectiveness in recovering the measured plasma parameters was hindered by the metal layer deposited on the insulating probe tube which was accounted for the variation in the plasma measurements. Using a quartz crystal microbalance combined with electrostatic filters, the ionization fraction of the metal flux was measured at various input power of 2-16 kW and pressure of 5-40 mTorr. The metal ionization fraction reduced significantly with the increasing input power and decreasing gas pressure which were attributed to the corresponding variation in the ionization cross section and the residence time of the sputtered atoms in the plasma, respectively. Both the metal neutral and ion flux increased at higher power and lower pressure. The 3D measurements further showed that the ionization fraction decreased when moving up from the substrate to the cathode.

  19. RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

    Science.gov (United States)

    Sahin, Halil Turgut

    2013-01-01

    An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

  20. High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

  1. RF MEMS

    Indian Academy of Sciences (India)

    At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

  2. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  3. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  4. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  5. Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad

    2018-01-15

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\\\access point (AP) and multiple VLC\\\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  6. Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad; Salhab, Anas M.; Zummo, Salam A.; Alouini, Mohamed-Slim

    2018-01-01

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\access point (AP) and multiple VLC\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  7. Rectifier Design Challenges for RF Wireless Power Transfer and Energy Harvesting Systems

    Directory of Open Access Journals (Sweden)

    A. Collado

    2017-06-01

    Full Text Available The design of wireless power transfer (WPT and energy harvesting (EH solutions poses different challenges towards achieving maximum RF-DC conversion efficiency in these systems. This paper covers several selected challenges when developing WPT and electromagnetic EH solutions, such as the design of multiband and broadband rectifiers, the minimization of the effect that load and input power variations may have on the system performance and finally the most optimum power combining mechanisms that can be used when dealing with multi-element rectifiers.

  8. Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

    International Nuclear Information System (INIS)

    Manjula, J.; Malarvizhi, S.

    2014-01-01

    This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. (semiconductor integrated circuits)

  9. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  10. Operational performance and improvements to the rf power sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5 GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  11. High voltage power supplies for ITER RF heating and current drive systems

    International Nuclear Information System (INIS)

    Gassmann, T.; Arambhadiya, B.; Beaumont, B.; Baruah, U.K.; Bonicelli, T.; Darbos, C.; Purohit, D.; Decamps, H.; Albajar, F.; Gandini, F.; Henderson, M.; Kazarian, F.; Lamalle, P.U.; Omori, T.; Parmar, D.; Patel, A.; Rathi, D.; Singh, N.P.

    2011-01-01

    The RF heating and current drive (H and CD) systems to be installed for the ITER fusion machine are the electron cyclotron (EC), ion cyclotron (IC) and, although not in the first phase of the project, lower hybrid (LH). These systems require high voltage, high current power supplies (HVPS) in CW operation. These HVPS should deliver around 50 MW electrical power to each of the RF H and CD systems with stringent requirements in terms of accuracy, voltage ripple, response time, turn off time and fault energy. The PSM (Pulse Step Modulation) technology has demonstrated over the past 20 years its ability to fulfill these requirements in many industrial facilities and other fusion reactors and has therefore been chosen as reference design for the IC and EC HVPS systems. This paper describes the technical specifications, including interfaces, the resulting constraints on the design, the conceptual design proposed for ITER EC and IC HVPS systems and the current status.

  12. High-power CO laser with RF discharge for isotope separation employing condensation repression

    Science.gov (United States)

    Baranov, I. Ya.; Koptev, A. V.

    2008-10-01

    High-power CO laser can be the effective tool in such applications as isotope separation using the free-jet CRISLA method. The way of transfer from CO small-scale experimental installation to industrial high-power CO lasers is proposed through the use of a low-current radio-frequency (RF) electric discharge in a supersonic stream without an electron gun. The calculation model of scaling CO laser with RF discharge in supersonic stream was developed. The developed model allows to calculate parameters of laser installation and optimize them with the purpose of reception of high efficiency and low cost of installation as a whole. The technical decision of industrial CO laser for isotope separation employing condensation repression is considered. The estimated cost of laser is some hundred thousand dollars USA and small sizes of laser head give possibility to install it in any place.

  13. Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-01-01

    Full Text Available The ceramic target of Indium tinoxide (ITO (90% In2O3-10%SnO2 has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD, field emission scanning electron microscope (FESEM, atomic force microscope (AFM, UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222 and (400 of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.

  14. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  15. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R. [Advanced Materials Research Centre (AMREC), SIRIM Berhad, Lot 34, Jalan Hi- Tech 2/3, Kulim Hi-Tech Park, 09000 Kulim (Malaysia)

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  16. High voltage power supplies for INDUS-2 RF system

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Hannurkar, P.R.

    2003-01-01

    The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

  17. A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

    International Nuclear Information System (INIS)

    Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

    1990-01-01

    A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

  18. Effects of an Anomalous Resistivity on the Power Deposition by Alfven Waves in Pre-Heated Spherical Tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Bruma, C.; Cuperman, S.; Komoshvili, K. [Tel Aviv Univ., Ramat Aviv (Israel)

    2005-08-01

    As it is the case with tokamaks in general, and moreover, due to their specific geometry (limited space for inboard solenoid magnets), low aspect ratio (spherical) tokamaks (STs) require additional auxiliary non-ohmic current startup and maintenance, generation of internal transport barriers (associated with underlying sheared poloidal flows and quasi-stationary radial electric fields), plasma heating, etc. One of the options to generate these necessary effects in STs is by the aid of rf waves launched from a suitable external antenna; in this option the effects just mentioned are a consequence of ponderomotive forces resulting from the interaction of the rf waves with the plasma. Since experimental data on STs (viz., the START-device) reveal the presence of an anomalous plasma resistivity (about four times Spitzer's one), we carried out a systematic parametric investigation of the effects of an increased plasma resistivity on the magnitude and spatial localization of the resulting power deposition.

  19. Poster - Thur Eve - 13: Quantifying specific absorption rate of shielded RF coils through electromagnetic simulations for 7-T MRI.

    Science.gov (United States)

    Belliveau, J-G; Gilbert, K M; Abou-Khousa, M; Menon, R S

    2012-07-01

    Ultra-high field MRI has many advantages such as increasing spatial resolution and exploiting contrast never before seen in-vivo. This contrast has been shown to be beneficial for many applications such as monitoring early and late effect to radiation therapy and transient changes during disease to name a few. However, at higher field strengths the RF wave, needed to for transmitting and receiving signal, approaches that of the head. This leads to constructive and deconstructive interference and a non -uniform flip angle over the volume being imaged. A transmit or transceive RF surface coil arrays is currently a method of choice to overcome this problem; however, mutual inductance between elements poses a significant challenge for the designer. A method to decouple elements in such an array is by using circumferential shielding; however, the potential benefits and/or disadvantages have not been investigated. This abstract primarily focuses on understanding power deposition - measured through Specific Absorption Rate - in the sample using circumferentially shielded RF coils. Various geometries of circumferentially shielded coils are explored to determine the behaviour of shield width and its effect on required transmit power and power deposition to the sample. Our results indicate that there is an optimization on shield width depending on the imaging depth. Additionally, the circumferential shield focuses the field more than unshielded coils, meaning that slight SAR may even be lower for circumferential shielded RF coils in array. © 2012 American Association of Physicists in Medicine.

  20. Investigations of DC power supplies with optoelectronic transducers and RF energy converters

    Science.gov (United States)

    Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

    2016-04-01

    Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

  1. Pulsed rf systems for large storage rings

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1979-03-01

    The possibility is considered that by using a pulsed rf system a substantial reduction can be made in the rf power requirement for the next generation of large storage rings. For a ring with a sufficiently large circumference, the time between bunch passages, T/sub b/, can exceed the cavity filling time, T/sub f/. As the ratio T/sub b//T/sub f/ increases, it is clear that at some point the average power requirement can be reduced by pulsing the rf to the cavities. In this mode of operation, the rf power is turned on a filling time or so before the arrival of a bunch and is switched off again at the time of bunch passage. There is no rf energy in the accelerating structure, and hence no power dissipation, for most of the period between bunches

  2. X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

    Directory of Open Access Journals (Sweden)

    E. Adli

    2011-08-01

    Full Text Available We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter regime of CLIC.

  3. X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

    CERN Document Server

    Adli, E; Dubrovskiy, A; Syratchev, I; Ruber, R; Ziemann, V

    2011-01-01

    We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter reg...

  4. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-01-01

    In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

  5. A highly sensitive RF-to-DC power converter with an extended dynamic range

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

    2017-01-01

    This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross

  6. An updated overview of the LEB RF system

    International Nuclear Information System (INIS)

    Rogers, J.D.; Ferrell, J.H.; Curbow, J.E.; Friedrichs, C.

    1992-01-01

    Each of the Low Energy Booster (LEB) rf systems consists of the following major subsystems: a vacuum tube final rf amplifier driven by a solid state rf amplifier, a ferrite-tuned rf cavity used to bunch and accelerate the beam, a low-level rf system including rf feedback systems, a computer-based supervisory control system, and associated power supplies. The LEB rf system is broadband with the exception of the rf cavity, which is electronically tuned from approximately 47.5 MHz to 59.7 MHz in 50 ms. The design and development status of the LEB rf system is presented, with particular emphasis on the cavity and tuner, and the tuner bias power supply

  7. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    International Nuclear Information System (INIS)

    Chen, Zukun

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  8. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zukun [Los Alamos National Laboratory

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  9. Design, construction and test of RF solid state power amplifier for IRANCYC-10

    Science.gov (United States)

    Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

    2018-03-01

    In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

  10. A new slip stacking RF system for a twofold power upgrade of Fermilab's Accelerator Complex

    Energy Technology Data Exchange (ETDEWEB)

    Madrak, Robyn [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2014-05-15

    Fermilab's Accelerator Complex has been recently upgraded, in order to increase the 120 GeV proton beam power on target from about 400 kW to over 700 kW for NOvA and other future intensity frontier experiments. One of the key ingredients of the upgrade is the offloading of some Main Injector synchrotron operations - beam injection and RF manipulation called ''slip stacking'' - to the 8GeV Recycler Ring, which had until recently been used only for low-intensity antiproton storage and cooling. This required construction of two new 53 MHz RF systems for the slip-stacking manipulations. The cavities operate simultaneously at Vpeak ≲150 kV, but at slightly different frequencies (Δf=1260 Hz). Their installation was completed in September 2013. This article describes the novel solutions used in the design of the new cavities, their tuning system, and the associated high power RF system. First results showing effective operation of the RF system, beam capture and successful slip-stacking in the Recycler Ring are presented.

  11. Characterization of Energy Availability in RF Energy Harvesting Networks

    Directory of Open Access Journals (Sweden)

    Daniela Oliveira

    2016-01-01

    Full Text Available The multiple nodes forming a Radio Frequency (RF Energy Harvesting Network (RF-EHN have the capability of converting received electromagnetic RF signals in energy that can be used to power a network device (the energy harvester. Traditionally the RF signals are provided by high power transmitters (e.g., base stations operating in the neighborhood of the harvesters. Admitting that the transmitters are spatially distributed according to a spatial Poisson process, we start by characterizing the distribution of the RF power received by an energy harvester node. Considering Gamma shadowing and Rayleigh fading, we show that the received RF power can be approximated by the sum of multiple Gamma distributions with different scale and shape parameters. Using the distribution of the received RF power, we derive the probability of a node having enough energy to transmit a packet after a given amount of charging time. The RF power distribution and the probability of a harvester having enough energy to transmit a packet are validated through simulation. The numerical results obtained with the proposed analysis are close to the ones obtained through simulation, which confirms the accuracy of the proposed analysis.

  12. Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

    International Nuclear Information System (INIS)

    Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao

    2017-01-01

    We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

  13. Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao, E-mail: dxiang@sjtu.edu.cn

    2017-03-21

    We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

  14. Reducing Energy Degradation Due to Back-bombardment Effect with Modulated RF Input in S-band Thermionic RF Gun

    Science.gov (United States)

    Kii, Toshiteru; Nakai, Yoko; Fukui, Toshio; Zen, Heishun; Kusukame, Kohichi; Okawachi, Norihito; Nakano, Masatsugu; Masuda, Kai; Ohgaki, Hideaki; Yoshikawa, Kiyoshi; Yamazaki, Tetsuo

    2007-01-01

    Energy degradation due to back-bombardment effect is quite serious to produce high-brightness electron beam with long macro-pulse with thermionic rf gun. To avoid the back-bombardment problem, a laser photo cathode is used at many FEL facilities, but usually it costs high and not easy to operate. Thus we have studied long pulse operation of the rf gun with thermionic cathode, which is inexpensive and easy to operate compared to the photocathode rf gun. In this work, to reduce the energy degradation, we controlled input rf power amplitude by controlling pulse forming network of the power modulator for klystron. We have successfully increased the pulse duration up to 4 μs by increasing the rf power from 7.8 MW to 8.5 MW during the macro pulse.

  15. Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

    2017-02-15

    Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

  16. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  17. Power deposition for ion cyclotron heating in large tokamaks

    International Nuclear Information System (INIS)

    Hellsten, T.; Villard, L.

    1988-01-01

    The power deposition profiles during minority ion cyclotron heating are analysed in large tokamaks by using the global, toroidal wave code LION. For tokamaks with large aspect ratio and with circular cross-section, the wave is focused on the magnetic axis and can be absorbed there by cyclotron absorption when the cyclotron resonance passes through the magnetic axis. The power deposition profile is then essentially determined by the Doppler broadening of the ion cyclotron resonance. For equilibria either non-circular or with a small aspect ratio the power deposition profile depends also on the strength of the damping. In this case the power deposition profile can be expressed as a sum of two power deposition profiles. One is related to the power absorbed in a single pass, and its shape is similar to that obtained for large aspect ratio and circular cross-section. The other profile is obtained by calculating the power deposition in the limit of weak damping, in which case the wave electric field is almost constant along the cyclotron resonance layer. A heuristic formula for the power deposition is given. The formula includes a number of calibration curves and functions which has been calculated with the LION code for JET relevant equilibria. The formula enables calculation of the power deposition profile in a simple way when the launched wave spectrum and damping coefficients are known. (author). 7 refs, 11 figs

  18. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    International Nuclear Information System (INIS)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L; Joshi, L M; Nangru, S C

    2010-01-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  19. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Joshi, L M; Nangru, S C, E-mail: pramod@ipr.res.i [Central Electronics Engineering Research Institute, Pilani, Rajasthan 333 031 (India)

    2010-02-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  20. Characterization of gaseous species in scanning atmospheric rf plasma with transmission infrared spectroscopy

    International Nuclear Information System (INIS)

    Kim, Seong H.; Kim, Jeong Hoon; Kang, Bang-Kwon

    2008-01-01

    A scanning atmospheric radio-frequency (rf) plasma was analyzed with transmission infrared (IR) spectroscopy. The IR analyses were made for the plasmas used for hydrophobic coating deposition and superhydrophobic coating deposition processes. Since the rf plasma was generated in a small open space with a high gas flow rate in ambient air, the density of gas-phase molecules was very high and the plasma-generated reactive species seemed to undergo various reactions in the gas phase. So, the transmission IR spectra of the scanning atmospheric rf plasma were dominated by gas-phase reaction products, rather than plasma-generated intermediate species. In the CH 4 /He plasma used for hydrophobic coating deposition, C 2 H 6 , C 2 H 2 , and a small amount of C 2 H 4 as well as CO were detected in transmission IR. The intensities of these peaks increased as the rf power increased. The CO formation is due to the activation of oxygen and water in the air. In the CF 4 /H 2 /He plasma used for deposition of superhydrophobic coatings, C 2 F 6 , CF 3 H, COF 2 , and HF were mainly detected. When the H 2 /CF 4 ratio was ∼0.5, the consumption of CF 4 was the highest. As the H 2 /CF 4 ratio increased higher, the C 2 F 6 production was suppressed while the CF 3 H peak grew and the formation of CH 4 were detected. In both CH 4 /He and CF 4 /H 2 /He plasma systems, the undissociated feed gas molecules seem to be highly excited vibrationally and rotationally. The information on plasma-generated reactive species and their reactions was deduced from the distribution of these gas-phase reaction products

  1. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  2. Study of RF-excited Diethylene Glycol Dimethyl Ether Plasmas by Mass Spectrometry

    International Nuclear Information System (INIS)

    Algatti, M A; Mota, R P; Júnior, P W P Moreira; Honda, R Y; Kayama, M E; Kostov, K G

    2012-01-01

    This paper deals with the study of the fragmentation process of diethylene glycol dimethyl ether (CH 3 O(CH 2 CH 2 O) 2 CH 3 ) (diglyme here in) molecule in low pressure RF excited plasma discharges. The study was carried out using mass spectrometry. The results showed that for a fixed pressure, the increase of the RF power coupled to the plasma chamber from 1 to 35 W produced a plasma environment much more reactive which increases the population of the ionized species like CH 2 + (15 amu), C 2 H 4 + (28 amu), CH 3 O + (31 amu), C 2 H 4 O + (44 amu), CH 3 OCH 2 CH 2 + (59 amu) and CH 3 OCH 2 CH 2 O + (75 amu). This fact may be attributed to the increase of the electronic temperature that makes predominant the occurrence of inelastic processes that promotes molecular fragmentation. For a fixed value of RF power the increase of pressure from 50 mTorr to 100 mTorr produces the decreasing of the above mentioned chemical species due the lower electronic mean free path. These results suggest that if one wants to keep the monomer's functionality within the plasma deposited films resulting from such kind of discharges one must operate in low power conditions.

  3. A no-load RF calorimeter

    Science.gov (United States)

    Chernoff, R. C.

    1975-01-01

    The described device can be used to measure the output of any dc powered RF source. No dummy load is required for the measurements. The device is, therefore, called the 'no-load calorimeter' (NLC). The NLC measures the power actually fed to the antenna or another useful load. It is believed that the NLC can compete successfully with directional coupler type systems in measuring the output of high-power RF sources.

  4. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  5. The drive beam pulse compression system for the CLIC RF power source

    CERN Document Server

    Corsini, R

    1999-01-01

    The Compact LInear Collider (CLIC) is a high energy (0.5 to 5 TeV) e ± linear collider that uses a high- current electron beam (the drive beam) for 30 GHz RF power production by the Two-Beam Acceleration (TBA) method. Recently, a new cost­effective and efficient generation scheme for the drive beam has been developed. A fully­loaded normal­conducting linac operating at lower frequency (937 MHz) generates and accelerates the drive beam bunches, and a compression system composed of a delay­line and two combiner rings produces the proper drive beam time structure for RF power generation in the drive beam decelerator. In this paper, a preliminary design of the whole compression system is presented. In particular, the fundamental issue of preserving the bunch quality along the complex is studied and its impact on the beam parameters and on the various system components is assessed. A first design of the rings and delay­line lattice, including path length tuning chicanes, injection and extraction regions is a...

  6. On the estimation of the worst-case implant-induced RF-heating in multi-channel MRI

    Science.gov (United States)

    Córcoles, Juan; Zastrow, Earl; Kuster, Niels

    2017-06-01

    The increasing use of multiple radiofrequency (RF) transmit channels in magnetic resonance imaging (MRI) systems makes it necessary to rigorously assess the risk of RF-induced heating. This risk is especially aggravated with inclusions of medical implants within the body. The worst-case RF-heating scenario is achieved when the local tissue deposition in the at-risk region (generally in the vicinity of the implant electrodes) reaches its maximum value while MRI exposure is compliant with predefined general specific absorption rate (SAR) limits or power requirements. This work first reviews the common approach to estimate the worst-case RF-induced heating in multi-channel MRI environment, based on the maximization of the ratio of two Hermitian forms by solving a generalized eigenvalue problem. It is then shown that the common approach is not rigorous and may lead to an underestimation of the worst-case RF-heating scenario when there is a large number of RF transmit channels and there exist multiple SAR or power constraints to be satisfied. Finally, this work derives a rigorous SAR-based formulation to estimate a preferable worst-case scenario, which is solved by casting a semidefinite programming relaxation of this original non-convex problem, whose solution closely approximates the true worst-case including all SAR constraints. Numerical results for 2, 4, 8, 16, and 32 RF channels in a 3T-MRI volume coil for a patient with a deep-brain stimulator under a head imaging exposure are provided as illustrative examples.

  7. Design and development of RF system for vertical test stand for characterization of superconducting RF cavities

    International Nuclear Information System (INIS)

    Mohania, Praveen; Rajput, Vikas; Baxy, Deodatta; Agrawal, Ankur; Mahawar, Ashish; Adarsh, Kunver; Singh, Pratap; Shrivastava, Purushottam

    2011-01-01

    RRCAT is developing a Vertical Test Stand (VTS) to test and qualify 1.3 GHz/650 MHz, SCRF Cavities in collaboration with Fermi National Accelerator Laboratory (FNAL) under Indian Institutions' Fermilab Collaboration. The technical details for VTS is being provided by FNAL, USA. The RF System of VTS needs to provide stable RF power to SCRF cavity with control of amplitude, relative phase and frequency. The incident, reflected, transmitted power and field decay time constant of the cavity are measured to evaluate cavity performance parameters (E, Qo). RF Power is supplied via 500 W Solid State amplifier, 1270-1310 MHz being developed by PHPMS, RRCAT. VTS system is controlled by PXI Platform and National Instruments LabVIEW software. Low Level RF (LLRF) system is used to track the cavity frequency using Phase Locked Loop (PLL). The system is comprised of several integrated functional modules which would be assembled, optimized, and tested separately. Required components and instruments have been identified and procurement for the same is underway. Inhouse development for the Solid State RF amplifier and instrument interfacing is in progress. This paper describes the progress on the development of the RF system for VTS. (author)

  8. High-power RF window and coupler development for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Neubauer, M.; Fant, K.; Hodgson, J.; Judkins, J.; Schwarz, H.; Rimmer, R.A.

    1995-05-01

    We describe the fabrication and testing of the RF windows designed to transmit power to the PEP-II 476 MHz cavities. Design choices to maximize the reliability of the window are discussed. Fabrication technologies for the window are described and finite-element analysis of the assembly process is presented. Conditioning and high-power testing of the window are discussed. Design of the coupler assembly including the integration of the window and other components is reported

  9. Effects of an RF limiter on TEXTOR's edge plasmas

    International Nuclear Information System (INIS)

    Boedo, J.A.; Sakawa, Y.; Gray, D.S.; Mank, G.; Noda, N.

    1997-01-01

    Studies directed towards the reduction of particle and heat fluxes to plasma facing components by the application of ponderomotive forces generated by radio frequency (RF) are being conducted in TEXTOR. A modified poloidal limiter is used as an antenna with up to 3 kW of RF power; the data obtained show that the plasma is repelled by the RF ponderomotive potential. The density is reduced by a factor of 2-4 and the radial decay length is substantially altered. The density near the limiter decays exponentially with RF power. The electron temperature profile changes, with the decay length becoming longer (almost flat) during the RF. The temperature in the scrape off layer (SOL) increases and its increase is roughly proportional to the RF power until it saturates, suggesting that the heating efficiency drops with power, and that improved performance is to be expected at higher powers. (orig.)

  10. DC switch power supply for vacuum-arc coatings deposition

    International Nuclear Information System (INIS)

    Zalesskij, D.Yu.; Volkov, Yu.Ya.; Vasil'ev, V.V.; Kozhushko, V.V.; Luchaninov, A.A.; Strel'nitskij, V.E.

    2008-01-01

    Special DC Switch Power Supply for vacuum-arc deposition was developed and tested in the mode of depositing Al and AlN films. Maximum output power was 6 kW, maximum output current - 120 A, open-circuit voltage - 150 V. The Power Supply allows to adjust and stabilize output current in a wide range. Testing of the Power Supply revealed an advantages over the standard 'Bulat-6' power supply, especially for deposition of non-conductive AlN films.

  11. Power excitation by the use of a rf wiggler

    International Nuclear Information System (INIS)

    Ruggiero, A.G.

    1992-01-01

    It is well-known that there are difficulties to obtain rf power sources of significant amount for frequencies larger than 3 GHz. Yet, rf sources in the centimeter/millimeter wavelength range would be very useful to drive, for example, high-gradient accelerating linacs for electron-positron linear colliders. We would like to propose an alternative method to produce such radiation. It makes use of a short electron bunch traveling along the axis of a waveguide which is at the same time excited by a TM propagating electromagnetic wave. It is well known that radiation can be obtained by wiggling the motion of the electrons in a direction perpendicular to the main one. The wiggling action can be included by electromagnetic fields in a fashion similar to the one caused by wiggler magnets. We found that an interesting mode of operation is to drive the waveguide with an excitation frequency very close to the cut off. For such excitation, the corresponding e.m. wave travels with a very large phase velocity which in turn has the effect to increase the wiggling action on the electron bunch. Our method, to be effective, relies also on the coherence of the radiation; that is the bunch length is taken to be considerably shorter than the radiated wavelength. In this case, the total power radiated should be proportional to the square of the total number of electrons in the bunch. The paper concludes with possible modes of operation, a list of performance parameters and a proposed experimental set-up

  12. Multi-Channel RF System for MRI-Guided Transurethral Ultrasound Thermal Therapy

    Science.gov (United States)

    Yak, Nicolas; Asselin, Matthew; Chopra, Rajiv; Bronskill, Michael

    2009-04-01

    MRI-guided transurethral ultrasound thermal therapy is an approach to treating localized prostate cancer which targets precise deposition of thermal energy within a confined region of the gland. This treatment requires a system incorporating a heating applicator with multiple planar ultrasound transducers and associated RF electronics to control individual elements independently in order to achieve accurate 3D treatment. We report the design, construction, and characterization of a prototype multi-channel system capable of controlling 16 independent RF signals for a 16-element heating applicator. The main components are a control computer, microcontroller, and a 16-channel signal generator with 16 amplifiers, each incorporating a low-pass filter and transmitted/reflected power detection circuit. Each channel can deliver from 0.5 to 10 W of electrical power and good linearity from 3 to 12 MHz. Harmonic RF signals near the Larmor frequency of a 1.5 T MRI were measured to be below -30 dBm and heating experiments within the 1.5 T MR system showed no significant decrease in SNR of the temperature images. The frequency and power for all 16 channels could be changed in less than 250 ms, which was sufficiently rapid for proper performance of the control algorithms. A common backplane design was chosen which enabled an inexpensive, modular approach for each channel resulting in an overall system with minimal footprint.

  13. Synchronization of RF fields of Indus 2 RF cavities for proper injection and acceleration of beam

    International Nuclear Information System (INIS)

    Tiwari, Nitesh; Bagduwal, Pritam S.; Lad, M.; Hannurkar, P.R.

    2009-01-01

    Indus-2 is a synchrotron light source with designed parameters of 2.5 GeV, 300 mA beam current. Four RF cavities fed from four RF power stations have been used for beam acceleration from 550 MeV to 2.5 GeV and synchrotron loss compensation. Particle should reach the RF cavity at the proper phase for proper acceptance of the beam in ring. At injection if the phase is not proper the acceptance efficiency reduces and the maximum stored current in the ring also gets limited. Equal contribution from four cavities at every value of current and energy level is very important. Improper phase will cause the imbalance of the power among different station hence will limit maximum stored current and reduce life time of the stored beam. Phase optimization was done in two-step, first at injection to have better injection rate and the stations were operated at the sufficient power for control loops to operate. Then at 2 GeV and 2.5 GeV energy so that beam extracts equal power from all four RF stations. Phase synchronization of all four cavities from injection to 2.5 GeV has already been done at 50 mA stored beam current. If phases of RF fields inside four RF cavities is not proper then beam will not see the total RF voltage as summation of all four cavity gap voltages, hence it is a very important parameter to be optimized and maintained during operation. (author)

  14. Design of 250-MW CW RF system for APT

    International Nuclear Information System (INIS)

    Rees, D.

    1997-01-01

    The design for the RF systems for the APT (Accelerator Production of Tritium) proton linac will be presented. The linac produces a continuous beam power of 130 MW at 1300 MeV with the installed capability to produce up to a 170 MW beam at 1700 MeV. The linac is comprised of a 350 MHz RFQ to 7 MeV followed in sequence by a 700 MHz coupled-cavity drift tube linac, coupled-cavity linac, and superconducting (SC) linac to 1700 MeV. At the 1700 MeV, 100 mA level the linac requires 213 MW of continuous-wave (CW) RF power. This power will be supplied by klystrons with a nominal output power of 1.0 MW. 237 kystrons are required with all but three of these klystrons operating at 700 MHz. The klystron count includes redundancy provisions that will be described which allow the RF systems to meet an operational availability in excess of 95 percent. The approach to achieve this redundancy will be presented for both the normal conducting (NC) and SC accelerators. Because of the large amount of CW RF power required for the APT linac, efficiency is very important to minimize operating cost. Operation and the RF system design, including in-progress advanced technology developments which improve efficiency, will be discussed. RF system performance will also be predicted. Because of the simultaneous pressures to increase RF system reliability, reduce tunnel envelope, and minimize RF system cost, the design of the RF vacuum windows has become an important issue. The power from a klystron will be divided into four equal parts to minimize the stress on the RF vacuum windows. Even with this reduction, the RF power level at the window is at the upper boundary of the power levels employed at other CW accelerator facilities. The design of a 350 MHz, coaxial vacuum window will be presented as well as test results and high power conditioning profiles. The transmission of 950 kW, CW, power through this window has been demonstrated with only minimal high power conditioning

  15. High-power comparison among brazed, clamped and electroformed X-band cavities

    Energy Technology Data Exchange (ETDEWEB)

    Spataro, B., E-mail: bruno.spataro@lnf.infn.it [INFN-LNF, Via E. Fermi 40, 00044 Frascati, Rome (Italy); Alesini, D.; Chimenti, V. [INFN-LNF, Via E. Fermi 40, 00044 Frascati, Rome (Italy); Dolgashev, V. [SLAC, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Higashi, Y. [KEK 1-1 Oho, Tsukuba, Ibaraki, 305-0801 (Japan); Migliorati, M.; Mostacci, A. [University of Rome Sapienza, Department of Fundamental and Applied Science for Engineering, Via A. Scarpa 14, 00185 Rome (Italy); Parodi, R. [INFN-Genova, Via Dodecaneso 33, 16146 Genova (Italy); Tantawi, S.G.; Yeremian, A.D. [SLAC, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

    2011-11-21

    We report the building procedure of X-band copper structures using the electroforming and electroplating techniques. These techniques allow the deposition of copper layers on a suitable die and they can be used to build RF structures avoiding the high temperature brazing step in the standard technique. We show the constructed prototypes and low power RF measurements and discuss the results of the high power tests at SLAC National Accelerator Laboratory.

  16. Lower hybrid wave edge power loss quantification on the Alcator C-Mod tokamak

    Science.gov (United States)

    Faust, I. C.; Brunner, D.; LaBombard, B.; Parker, R. R.; Terry, J. L.; Whyte, D. G.; Baek, S. G.; Edlund, E.; Hubbard, A. E.; Hughes, J. W.; Kuang, A. Q.; Reinke, M. L.; Shiraiwa, S.; Wallace, G. M.; Walk, J. R.

    2016-05-01

    For the first time, the power deposition of lower hybrid RF waves into the edge plasma of a diverted tokamak has been systematically quantified. Edge deposition represents a parasitic loss of power that can greatly impact the use and efficiency of Lower Hybrid Current Drive (LHCD) at reactor-relevant densities. Through the use of a unique set of fast time resolution edge diagnostics, including innovative fast-thermocouples, an extensive set of Langmuir probes, and a Lyα ionization camera, the toroidal, poloidal, and radial structure of the power deposition has been simultaneously determined. Power modulation was used to directly isolate the RF effects due to the prompt ( t Radiofrequency (LHRF) power. LHRF power was found to absorb more strongly in the edge at higher densities. It is found that a majority of this edge-deposited power is promptly conducted to the divertor. This correlates with the loss of current drive efficiency at high density previously observed on Alcator C-Mod, and displaying characteristics that contrast with the local RF edge absorption seen on other tokamaks. Measurements of ionization in the active divertor show dramatic changes due to LHRF power, implying that divertor region can be a key for the LHRF edge power deposition physics. These observations support the existence of a loss mechanism near the edge for LHRF at high density ( n e > 1.0 × 10 20 (m-3)). Results will be shown addressing the distribution of power within the SOL, including the toroidal symmetry and radial distribution. These characteristics are important for deducing the cause of the reduced LHCD efficiency at high density and motivate the tailoring of wave propagation to minimize SOL interaction, for example, through the use of high-field-side launch.

  17. AN ALTERNATIVE APPROACH TO LOW FREQUENCY RF ACCELERATORS AND POWER SOURCES

    International Nuclear Information System (INIS)

    ZHAO, Y.

    2001-01-01

    The Muon Collider and Neutrino Factory projects require low frequency rf cavities because the size and emittance of the muon beam is much larger than is usual for electron or proton beams. The range of 30 MHz to 200 MHz is of special interest. However, the size of an accelerator with low frequency will be impractically large if it is simply scaled up from usual designs. In addition, to get very high peak power in this range is difficult. Presented in this paper is an alternative structure that employs a quasi-lumped inductance that can significantly reduce the transverse size while keeping high gradient. Also addressed is a power compression scheme with a thyratron. This gives a possible solution to provide very high peak power

  18. Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

    2010-09-15

    Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

  19. Rf Station For Ion Beam Staking In Hirfl-csr

    CERN Document Server

    Arbuzov, V S; Bushuev, A A; Dranichnikov, A N; Gorniker, E I; Kendjebulatov, E K; Kondakov, A A; Kondaurov, M; Kruchkov, Ya G; Krutikhin, S A; Kurkin, G Ya; Mironenko, L A; Motygin, S V; Osipov, V N; Petrov, V M; Pilan, Andrey M; Popov, A M; Rashenko, V V; Selivanov, A N; Shteinke, A R; Vajenin, N F

    2004-01-01

    BINP has developed and produced the RF station for Institute of Modern Physics (IMP), Lanzhou, China, for multipurpose accelerator complex with electron cooling. The RF station will be used for accumulation of ion beams in the main ring of the system. It was successfully tested in IMP and installed into the main accelerator ring of the complex. The RF station includes accelerating RF cavity and RF power generator with power supplies. The station works within frequency range 6.0 - 14.0 MHz, maximum voltage across the accelerating gap of the RF cavity - 20 kV. In the RF cavity the 200 VNP ferrite is utilized. A residual gas pressure in vacuum chamber does not exceed 2,5E-11 mbar. Maximum output power of the RF generator 25 kW. The data acquisition and control of the RF station is based on COMPACT - PCI bus and provides all functions of monitoring and control.

  20. Development of 650 MHz solid state RF amplifier for proton accelerator

    International Nuclear Information System (INIS)

    Jain, Akhilesh; Sharma, Deepak; Gupta, Alok; Tiwari, Ashish; Rao, Nageswar; Sekar, Vasanthi; Lad, M.; Hannurkar, P.R.; Gupta, P.D.

    2011-01-01

    Design and development of 30 kW high powers RF source at 650 MHz, using solid RF state technology, has been initiated at RRCAT. The indigenous technology development efforts will be useful for the proposed high power proton accelerators for SNS/ADS applications. In this 650 MHz amplifier scheme, 30 kW CW RF power will be generated using modular combination of 8 kW amplifier units. Necessary studies were carried out for device selection, choice of amplifier architecture and design of high power combiners and dividers. Presently RF amplifier delivering 250 W at 650 MHz has been fabricated and tested. Towards development of high power RF components, design and engineering prototyping of 16-port power combiner, directional coupler and RF dummy loads has been completed. The basic 8 kW amplifier unit is designed to provide power gain of 50 dB, bandwidth of 20 MHz and spurious response below 30 dB from fundamental signal. Based on the results of circuit simulation studies and engineering prototyping of amplifier module, two RF transistor viz. MRF3450 and MRF 61K were selected as solid state active devices. Impedance matching network in amplifier module is designed using balanced push pull configuration with transmission line BALUN. Due to high circulating current near drain side, metal clad RF capacitors were selected which helps in avoiding hot spot from output transmission path, ensuring continuous operation at rated RF power without damage to RF board. 350 W circulator is used to protect the RF devices from reflected power. Based on the prototype design and measured performance, one of these RF transistors will be selected to be used as workhorse for all amplifier modules. Two amplifier modules are mounted on water cooled copper heat-sink ensuring proper operating temperature for reliable and safe operation of amplifier. Also real time control system and data logger has been developed to provide DAQ and controls in each rack. For power combining and power measurement

  1. A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

    2018-01-01

    This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

  2. A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed

    2018-01-09

    This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

  3. RF power absorption by plasma of low pressure low power inductive discharge located in the external magnetic field

    Science.gov (United States)

    Kralkina, E. A.; Rukhadze, A. A.; Nekliudova, P. A.; Pavlov, V. B.; Petrov, A. K.; Vavilin, K. V.

    2018-03-01

    Present paper is aimed to reveal experimentally and theoretically the influence of magnetic field strength, antenna shape, pressure, operating frequency and geometrical size of plasma sources on the ability of plasma to absorb the RF power characterized by the equivalent plasma resistance for the case of low pressure RF inductive discharge located in the external magnetic field. The distinguishing feature of the present paper is the consideration of the antennas that generate not only current but charge on the external surface of plasma sources. It is shown that in the limited plasma source two linked waves can be excited. In case of antennas generating only azimuthal current the waves can be attributed as helicon and TG waves. In the case of an antenna with the longitudinal current there is a surface charge on the side surface of the plasma source, which gives rise to a significant increase of the longitudinal and radial components of the RF electric field as compared with the case of the azimuthal antenna current.

  4. 1 MW, 352.2 MHz, CW and Pulsed RF test stand

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Tyagi, Rajiv; Hannurkar, P.R.

    2011-01-01

    A 1 MW, 352.2 MHz, RF test stand based on Thales make TH 2089 klystron amplifier is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for characterization and qualification of RF components, cavities and related subsystems. Provision to vary RF power from 50 kW to 1 MW with adequate flexibility for testing wide range of HV components, RF components and cavities is incorporated in this test stand. The paper presents a brief detail of various power supplies like high voltage cathode bias power supply, modulating anode power supply, filament power supply, electromagnet power supplies and ion pump power supplies along with their interconnections for biasing TH 2089 klystron amplifier. A digital control and interlock system is being developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test set up. This RF test stand will be a unique national facility, capable of providing both CW and pulse RF power for realizing reliable RF power sources for various projects including the development of high energy proton linac under ADSS program of the Department of Atomic Energy. (author)

  5. Advanced Output Coupling for High Power Gyrotrons

    Energy Technology Data Exchange (ETDEWEB)

    Read, Michael [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ives, Robert Lawrence [Calabazas Creek Research, Inc., San Mateo, CA (United States); Marsden, David [Calabazas Creek Research, Inc., San Mateo, CA (United States); Collins, George [Calabazas Creek Research, Inc., San Mateo, CA (United States); Temkin, Richard [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Guss, William [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Lohr, John [General Atomics, La Jolla, CA (United States); Neilson, Jeffrey [Lexam Research, Redwood City, CA (United States); Bui, Thuc [Calabazas Creek Research, Inc., San Mateo, CA (United States)

    2016-11-28

    The Phase II program developed an internal RF coupler that transforms the whispering gallery RF mode produced in gyrotron cavities to an HE11 waveguide mode propagating in corrugated waveguide. This power is extracted from the vacuum using a broadband, chemical vapor deposited (CVD) diamond, Brewster angle window capable of transmitting more than 1.5 MW CW of RF power over a broad range of frequencies. This coupling system eliminates the Mirror Optical Units now required to externally couple Gaussian output power into corrugated waveguide, significantly reducing system cost and increasing efficiency. The program simulated the performance using a broad range of advanced computer codes to optimize the design. Both a direct coupler and Brewster angle window were built and tested at low and high power. Test results confirmed the performance of both devices and demonstrated they are capable of achieving the required performance for scientific, defense, industrial, and medical applications.

  6. Design of RF system for CYCIAE-230 superconducting cyclotron

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Zhiguo, E-mail: bitbearAT@hotmail.com; Ji, Bin; Fu, Xiaoliang; Cao, Xuelong; Zhao, Zhenlu; Zhang, Tinajue

    2017-05-11

    The CYCIAE230 is a low-current, compact superconducting cyclotron designed for proton therapy. The Radio Frequency system consists of four RF cavities and applies second harmonic to accelerate beams. The driving power for the cavity system is estimated to be approximately 150 kW. The LLRF controller is a self-made device developed and tested at low power using a small-scale cavity model. In this paper, the resonator systems of an S.C. cyclotron in history are reviewed. Contrary to those RF systems, the cavities of the CYCIAE230 cyclotron connect two opposite dees. Two high-power RF windows are included in the system. Each window carries approximately 75 kW RF power from the driver to the cavities. Thus, the RF system for the CY-CIAE230 cyclotron is operated in driven push–pull mode. The two-way amplifier-coupler-cavity systems are operated with approximately the same amount of RF power but 180° out of phase compared with each other. The design, as well as the technical advantage and limitations of this operating mode, of the CYCIAE230 cyclotron RF system is analyzed.

  7. Design of RF system for CYCIAE-230 superconducting cyclotron

    Science.gov (United States)

    Yin, Zhiguo; Ji, Bin; Fu, Xiaoliang; Cao, Xuelong; Zhao, Zhenlu; Zhang, Tinajue

    2017-05-01

    The CYCIAE230 is a low-current, compact superconducting cyclotron designed for proton therapy. The Radio Frequency system consists of four RF cavities and applies second harmonic to accelerate beams. The driving power for the cavity system is estimated to be approximately 150 kW. The LLRF controller is a self-made device developed and tested at low power using a small-scale cavity model. In this paper, the resonator systems of an S.C. cyclotron in history are reviewed. Contrary to those RF systems, the cavities of the CYCIAE230 cyclotron connect two opposite dees. Two high-power RF windows are included in the system. Each window carries approximately 75 kW RF power from the driver to the cavities. Thus, the RF system for the CY-CIAE230 cyclotron is operated in driven push-pull mode. The two-way amplifier-coupler-cavity systems are operated with approximately the same amount of RF power but 180° out of phase compared with each other. The design, as well as the technical advantage and limitations of this operating mode, of the CYCIAE230 cyclotron RF system is analyzed.

  8. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  9. A high frequency, high power CARM proposal for the DEMO ECRH system

    International Nuclear Information System (INIS)

    Mirizzi, Francesco; Spassovsky, Ivan; Ceccuzzi, Silvio; Dattoli, Giuseppe; Di Palma, Emanuele; Doria, Andrea; Gallerano, Gianpiero; Lampasi, Alessandro; Maffia, Giuseppe; Ravera, GianLuca; Sabia, Elio; Tuccillo, Angelo Antonio; Zito, Pietro

    2015-01-01

    Highlights: • ECRH system for DEMO. • Cyclotron Auto-Resonance Maser (CARM) devices. • Relativistic electron beams. • Bragg reflectors. • High voltage pulse modulators. - Abstract: ECRH&CD systems are extensively used on tokamak plasmas due to their capability of highly tailored power deposition, allowing very localised heating and non-inductive current drive, useful for MHD and profiles control. The high electron temperatures expected in DEMO will require ECRH systems with operating frequency in the 200–300 GHz range, equipped with a reasonable number of high power (P ≥ 1 MW) CW RF sources, for allowing central RF power deposition. In this frame the ENEA Fusion Department (Frascati) is coordinating a task force aimed at the study and realisation of a suitable high power, high frequency reliable source.

  10. A high frequency, high power CARM proposal for the DEMO ECRH system

    Energy Technology Data Exchange (ETDEWEB)

    Mirizzi, Francesco, E-mail: francesco.mirizzi@enea.it [Consorzio CREATE, Via Claudio 21, I-80125 Napoli (Italy); Spassovsky, Ivan [Unità Tecnica Applicazioni delle Radiazioni – ENEA, C.R. Frascati, via E. Fermi 45, I-00044 Frascati (Italy); Ceccuzzi, Silvio [Unità Tecnica Fusione – ENEA C. R. Frascati, via E. Fermi 45, 00044 Frascati, Roma (Italy); Dattoli, Giuseppe; Di Palma, Emanuele; Doria, Andrea; Gallerano, Gianpiero [Unità Tecnica Applicazioni delle Radiazioni – ENEA, C.R. Frascati, via E. Fermi 45, I-00044 Frascati (Italy); Lampasi, Alessandro; Maffia, Giuseppe; Ravera, GianLuca [Unità Tecnica Fusione – ENEA C. R. Frascati, via E. Fermi 45, 00044 Frascati, Roma (Italy); Sabia, Elio [Unità Tecnica Applicazioni delle Radiazioni – ENEA, C.R. Frascati, via E. Fermi 45, I-00044 Frascati (Italy); Tuccillo, Angelo Antonio; Zito, Pietro [Unità Tecnica Fusione – ENEA C. R. Frascati, via E. Fermi 45, 00044 Frascati, Roma (Italy)

    2015-10-15

    Highlights: • ECRH system for DEMO. • Cyclotron Auto-Resonance Maser (CARM) devices. • Relativistic electron beams. • Bragg reflectors. • High voltage pulse modulators. - Abstract: ECRH&CD systems are extensively used on tokamak plasmas due to their capability of highly tailored power deposition, allowing very localised heating and non-inductive current drive, useful for MHD and profiles control. The high electron temperatures expected in DEMO will require ECRH systems with operating frequency in the 200–300 GHz range, equipped with a reasonable number of high power (P ≥ 1 MW) CW RF sources, for allowing central RF power deposition. In this frame the ENEA Fusion Department (Frascati) is coordinating a task force aimed at the study and realisation of a suitable high power, high frequency reliable source.

  11. Design and Calibration of an RF Actuator for Low-Level RF Systems

    Science.gov (United States)

    Geng, Zheqiao; Hong, Bo

    2016-02-01

    X-ray free electron laser (FEL) machines like the Linac Coherent Light Source (LCLS) at SLAC require high-quality electron beams to generate X-ray lasers for various experiments. Digital low-level RF (LLRF) systems are widely used to control the high-power RF klystrons to provide a highly stable RF field in accelerator structures for beam acceleration. Feedback and feedforward controllers are implemented in LLRF systems to stabilize or adjust the phase and amplitude of the RF field. To achieve the RF stability and the accuracy of the phase and amplitude adjustment, low-noise and highly linear RF actuators are required. Aiming for the upgrade of the S-band Linac at SLAC, an RF actuator is designed with an I/Qmodulator driven by two digital-to-analog converters (DAC) for the digital LLRF systems. A direct upconversion scheme is selected for RF actuation, and an on-line calibration algorithm is developed to compensate the RF reference leakage and the imbalance errors in the I/Q modulator, which may cause significant phase and amplitude actuation errors. This paper presents the requirements on the RF actuator, the design of the hardware, the calibration algorithm, and the implementation in firmware and software and the test results at LCLS.

  12. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  13. Nonlinear plasma experiments in geospace with gigawatts of RF power at HAARP

    Energy Technology Data Exchange (ETDEWEB)

    Sheerin, J. P., E-mail: jsheerin@emich.edu [Physics and Astronomy, Eastern Michigan Univ., Ypsilanti, MI 48197 (United States); Cohen, Morris B., E-mail: mcohen@gatech.edu [Electrical and Computer Engineering, Georgia Tech, Atlanta, GA 30332-0250 (United States)

    2015-12-10

    The ionosphere is the ionized uppermost layer of our atmosphere (from 70 – 500 km altitude) where free electron densities yield peak critical frequencies in the HF (3 – 30 MHz) range. The ionosphere thus provides a quiescent plasma target, stable on timescales of minutes, for a whole host of active plasma experiments. High power RF experiments on ionospheric plasma conducted in the U.S. have been reported since 1970. The largest HF transmitter built to date is the HAARP phased-array HF transmitter near Gakona, Alaska which can deliver up to 3.6 Gigawatts (ERP) of CW RF power in the range of 2.8 – 10 MHz to the ionosphere with microsecond pointing, power modulation, and frequency agility. With an ionospheric background thermal energy in the range of only 0.1 eV, this amount of power gives access to the highest regimes of the nonlinearity (RF intensity to thermal pressure) ratio. HAARP’s unique features have enabled the conduct of a number of unique nonlinear plasma experiments in the interaction region of overdense ionospheric plasma including generation of artificial aurorae, artificial ionization layers, VLF wave-particle interactions in the magnetosphere, parametric instabilities, stimulated electromagnetic emissions (SEE), strong Langmuir turbulence (SLT) and suprathermal electron acceleration. Diagnostics include the Modular UHF Ionospheric Radar (MUIR) sited at HAARP, the SuperDARN-Kodiak HF radar, spacecraft radio beacons, HF receivers to record stimulated electromagnetic emissions (SEE) and telescopes and cameras for optical emissions. We report on short timescale ponderomotive overshoot effects, artificial field-aligned irregularities (AFAI), the aspect angle dependence of the intensity of the HF-enhanced plasma line, and production of suprathermal electrons. One of the primary missions of HAARP, has been the generation of ELF (300 – 3000 Hz) and VLF (3 – 30 kHz) radio waves which are guided to global distances in the Earth

  14. Linear collider RF: Introduction and summary

    International Nuclear Information System (INIS)

    Palmer, R.B.

    1995-01-01

    The relation of acceleration gradient with RF frequency is examined, and approximate general RF power requirements are derived. Considerations of efficiency and cost are discussed. RF Sources, presented at the conference, are reviewed. Overall efficiencies of the linear collider proposals are compared. copyright 1995 American Institute of Physics

  15. RF extraction issues in the relativistic klystron amplifiers

    Science.gov (United States)

    Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

    1994-05-01

    Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

  16. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. ZnO:Al thin films deposited by RF-magnetron sputtering with tunable and uniform properties.

    Science.gov (United States)

    Miorin, E; Montagner, F; Battiston, S; Fiameni, S; Fabrizio, M

    2011-03-01

    Nanostructured, high quality and large area Al-doped ZnO (ZnO:Al) thin films were obtained by radiofrequency (RF) magnetron sputtering. The sample rotation during deposition has resulted in excellent spatial distribution of thickness and electro-optical properties compared to that obtained under static conditions. ZnO:Al thin films are employed in a large number of devices, including thin film solar cells, where the uniformity of the properties is a key factor for a possible up-scaling of the research results to industrially relevant substrate sizes. A chemical post etching treatment was employed achieving tunable surface nanotextures to generate light scattering at the desired wavelength for improved cell efficiency. Since the film resistivity is only slightly increased by the etching, this post-deposition step allows separating the optimization of electro-optical properties from light scattering behavior. The thin films were characterized by FE-SEM, XRD, UV-VIS spectroscopy, four probe and van der Paw techniques.

  18. High total dose proton irradiation effects on silicon NPN rf power transistors

    International Nuclear Information System (INIS)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana; Pushpa, N.

    2014-01-01

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods

  19. High total dose proton irradiation effects on silicon NPN rf power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

    2014-04-24

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

  20. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Nitrate (NO3)

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized (wet) deposition, in kilograms per square kilometer multiplied by 100, of Nitrate (NO3) for the year 2002 compiled for every MRB_E2RF1 catchment of the Major River Basins (MRBs, Crawford and others, 2006). Estimates of NO3 deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  1. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Total Inorganic Nitrogen

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized atmospheric (wet) deposition, in kilograms per square kilometer multiplied by 100, of Total Inorganic Nitrogen for the year 2002 compiled for every MRB_E2RF1 catchment of selected Major River Basins (MRBs, Crawford and others, 2006). Estimates of Total Inorganic Nitrogen deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  2. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Ammonium (NH4)

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized (wet) deposition, in kilograms per square kilometer multiplied by 100, of ammonium (NH4) for the year 2002 compiled for every MRB_E2RF1 catchment of the Major River Basins (MRBs, Crawford and others, 2006). Estimates of NH4 deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  3. A Self-Powered Hybrid Energy Scavenging System Utilizing RF and Vibration Based Electromagnetic Harvesters

    International Nuclear Information System (INIS)

    Uluşan, H; Gharehbaghi, K; Külah, H; Zorlu, Ö; Muhtaroğlu, A

    2015-01-01

    This study presents a novel hybrid system that combines the power generated simultaneously by a vibration-based Electromagnetic (EM) harvester and a UHF band RF harvester. The novel hybrid scavenger interface uses a power management circuit in 180 nm CMOS technology to step-up and to regulate the combined output. At the first stage of the system, the RF harvester generates positive DC output with a 7-stage threshold compensated rectifier, while the EM harvester generates negative DC output with a self-powered AC/DC negative doubler circuit. At the second stage, the generated voltages are serially added, stepped-up with an on-chip charge pump circuit, and regulated to a typical battery voltage of 3 V. Test results indicate that the hybrid operation enables generation of 9 μW at 3 V output for a wide range of input stimulations, which could not be attained with either harvesting mode by itself. Moreover the hybrid system behaves as a typical battery, and keeps the output voltage stable at 3 V up to 18 μW of output power. The presented system is the first battery-like harvester to our knowledge that generates energy from two independent sources and regulates the output to a stable DC voltage. (paper)

  4. Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

    International Nuclear Information System (INIS)

    Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

    1996-01-01

    Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

  5. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  6. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  7. Simplified RF power system for Wideroe-type linacs

    International Nuclear Information System (INIS)

    Fugitt, J.; Howard, D.; Crosby, F.; Johnson, R.; Nolan, M.; Yuen, G.

    1981-03-01

    The RF system for the SuperHILAC injector linac was designed and constructed for minimum system complexity, wide dynamic range, and ease of maintenance. The final amplifier is close coupled to the linac and operates in an efficient semilinear mode, eliminating troublesome transmission lines, modulators, and high level regulators. The system has been operated at over 250 kW, 23 MHz with good regulation. The low level RF electronics are contained in a single chassis adjacent to the RF control computer, which monitors all important operating parameters. A unique 360 0 phase and amplitude modular is used for precise control and regulation of the accelerating voltage

  8. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

    NARCIS (Netherlands)

    Yan, L.T.; Schropp, R.E.I.

    2011-01-01

    Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

  9. Transient beam loading and rf power distribution in the SSC [Superconducting Super Collider

    International Nuclear Information System (INIS)

    Raka, E.C.

    1986-01-01

    Transient beam loading will occur in the SSC at injection as the fifteen individual batches from the High Energy Booster are loaded box-car fashion into the main rings. Periodic transient beam loading will be present also at injection due to the gaps between the successive batches as well as the gap that remains to be filled. Even after the rings have been ''filled'' there will remain the abort gap of 3.1 μsec. This can produce significant modulation of the phase and amplitude of the rf voltage seen by those bunches immediately following it unless corrective measures are taken. Two different methods of reducing this modulation will be discussed, each of which put certain requirements on the rf power distribution system

  10. Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

    International Nuclear Information System (INIS)

    Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

    1992-01-01

    This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

  11. Characterization of diamond-like carbon thin film synthesized by RF atmospheric pressure plasma Ar/CH4 jet

    Science.gov (United States)

    Sohbatzadeh, Farshad; Safari, Reza; Etaati, G. Reza; Asadi, Eskandar; Mirzanejhad, Saeed; Hosseinnejad, Mohammad Taghi; Samadi, Omid; Bagheri, Hanieh

    2016-01-01

    The growth of diamond like carbon (DLC) on a Pyrex glass was investigated by a radio frequency (RF) atmospheric pressure plasma jet (APPJ). The plasma jet with capacitive configuration ran by a radio frequency power supply at 13.56 MHz. Alumina ceramic was used as dielectric barrier. Ar and CH4 were used in atmospheric pressure as carrier and precursor gases, respectively. Diamond like carbon thin films were deposited on Pyrex glass at substrate temperature and applied power of 130 °C and 250 Watts, respectively. Performing field emission scanning electron microscope (FE-SEM) and laser Raman spectroscopy analysis resulted in deposition rate and the ID/IG ratio of 21.31 nm/min and 0.47, respectively. The ID/IG ratio indicated that the coating possesses relative high sp3 content The optical emission spectroscopy (OES) diagnostic was applied to diagnose plasma jet species. Estimating electron temperature and density of the RF-APPJ resulted in 1.36 eV and 2.75 × 1014 cm-3 at the jet exit, respectively.

  12. Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Labitzke, R.; Adolphi, B.; Jastrabík, Lubomír; Adámek, Petr; Drahokoupil, Jan; Hubička, Zdeněk; Kiselev, D.A.; Kholkin, A. L.; Gerlach, G.; Dejneka, Alexandr

    2011-01-01

    Roč. 205, č. 2 (2011), S241-S244 ISSN 0257-8972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed DC reactive sputtering * RF reactive sputtering * complex oxide film deposition * polymer substrate Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  13. RF Energy Harvesting Peel-and-Stick Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Lalau-Keraly, Christopher [PARC; Schwartz, David; Daniel, George; Lee, Joseph

    2017-08-29

    PARC, a Xerox Company, is developing a low-cost system of peel-and-stick wireless sensors that will enable widespread building environment sensor deployment with the potential to deliver up to 30% energy savings. The system is embodied by a set of RF hubs that provide power to the automatically located sensor nodes, and relays data wirelessly to the building management system (BMS). The sensor nodes are flexible electronic labels powered by rectified RF energy transmitted by a RF hub and can contain multiple printed and conventional sensors. The system design overcomes limitations in wireless sensors related to power delivery, lifetime, and cost by eliminating batteries and photovoltaic devices. The sensor localization is performed automatically by the inclusion of a programmable multidirectional antenna array in the RF hub. Comparison of signal strengths when the RF beam is swept allows for sensor localization, further reducing installation effort and enabling automatic recommissioning of sensors that have been relocated, overcoming a significant challenge in building operations. PARC has already demonstrated wireless power and temperature data transmission up to a distance of 20m with a duty cycle less than a minute between measurements, using power levels well within the FCC regulation limits in the 902-928 MHz ISM band. The sensor’s RF energy harvesting antenna dimensions was less than 5cmx9cm, demonstrating the possibility of small form factor for the sensor nodes.

  14. RF Pulsed Heating

    Energy Technology Data Exchange (ETDEWEB)

    Pritzkau, David P.

    2002-01-03

    RF pulsed heating is a process by which a metal is heated from magnetic fields on its surface due to high-power pulsed RF. When the thermal stresses induced are larger than the elastic limit, microcracks and surface roughening will occur due to cyclic fatigue. Pulsed heating limits the maximum magnetic field on the surface and through it the maximum achievable accelerating gradient in a normal conducting accelerator structure. An experiment using circularly cylindrical cavities operating in the TE{sub 011} mode at a resonant frequency of 11.424 GHz is designed to study pulsed heating on OFE copper, a material commonly used in normal conducting accelerator structures. The high-power pulsed RF is supplied by an X-band klystron capable of outputting 50 MW, 1.5 {micro}s pulses. The test pieces of the cavity are designed to be removable to allow testing of different materials with different surface preparations. A diagnostic tool is developed to measure the temperature rise in the cavity utilizing the dynamic Q change of the resonant mode due to heating. The diagnostic consists of simultaneously exciting a TE{sub 012} mode to steady-state in the cavity at 18 GHz and measuring the change in reflected power as the cavity is heated from high-power pulsed RF. Two experimental runs were completed. One run was executed at a calculated temperature rise of 120 K for 56 x 10{sup 6} pulses. The second run was executed at a calculated temperature rise of 82 K for 86 x 10{sup 6} pulses. Scanning electron microscope pictures show extensive damage occurring in the region of maximum temperature rise on the surface of the test pieces.

  15. Development and energization of IOT based RF amplifier

    International Nuclear Information System (INIS)

    Mandal, A.; Som, S.; Raj, P.R.; Manna, S.K.; Ghosh, S.; Seth, S.; Thakurta, S.; Thakur, S.K.; Saha, S.; Panda, U.S.

    2013-01-01

    A 704 MHz IOT based CW RF amplifier has been developed in VECC. It can also be used with proper tuning to power cavity modules operating at 650 MHz in high energy high intensity proton linear accelerator proposed to be built for ADSS/SNS programme in India and Project-X at Fermilab, USA. This IOT based amplifier provides up to 60 kW continuous wave RF power at 700 MHz. It required various power supplies, LCW cooling and forced air cooling for its operation. The auxiliary power supplies like Grid, Filament and Ion-pump, are floated and mounted on an isolated frame, i.e., HV deck. The mains inputs are electrically isolated by means of isolation transformer. Also, a Programmable Logic Controller (PLC) based interlocks along with high voltage collector power supply has been designed and developed for the safe operation of the RF amplifier. This paper discusses about various developments and energization of the IOT based RF amplifier with high power dummy load. (author)

  16. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    International Nuclear Information System (INIS)

    Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

    2012-01-01

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  17. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

    2012-01-31

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  18. A highly sensitive RF-to-DC power converter with an extended dynamic range

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed

    2017-10-24

    This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross-coupled rectifier, the proposed design offers 3.2× the dynamic range. It is also highly sensitive and requires −18 dBm of input power to produce a 1 V-output voltage when operating with a 100 kΩ load. Furthermore, the proposed design offers an open circuit sensitivity of −23.4 dBm and a peak power conversion efficiency of 67%.

  19. Electron diode oscillators for high-power RF generation

    International Nuclear Information System (INIS)

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  20. Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

    2006-01-01

    The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

  1. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  2. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    International Nuclear Information System (INIS)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L.

    2003-01-01

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

  3. Advancement of In-Flight Alumina Powder Spheroidization Process with Water Droplet Injection Using a Small Power DC-RF Hybrid Plasma Flow System

    Science.gov (United States)

    Jang, Juyong; Takana, Hidemasa; Park, Sangkyu; Nishiyama, Hideya

    2012-09-01

    The correlation between plasma thermofluid characteristics and alumina powder spheroidization processes with water droplet injection using a small power DC-RF hybrid plasma flow system was experimentally clarified. Micro-sized water droplets with a low water flow rate were injected into the tail of thermal plasma flow so as not to disturb the plasma flow directly. Injected water droplets were vaporized in the thermal plasma flow and were transported upstream in the plasma flow to the torch by the backflow. After dissociation of water, the production of hydrogen was detected by the optical emission spectroscopy in the downstream RF plasma flow. The emission area of the DC plasma jet expanded and elongated in the vicinity of the RF coils. Additionally, the emission area of RF plasma flow enlarged and was visible as red emission in the downstream RF plasma flow in the vicinity below the RF coils due to hydrogen production. Therefore, the plasma flow mixed with produced hydrogen increased the plasma enthalpy and the highest spheroidization rate of 97% was obtained at a water flow rate of 15 Sm l/min and an atomizing gas flow rate of 8 S l/min using a small power DC-RF hybrid plasma flow system.

  4. Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA

    International Nuclear Information System (INIS)

    Jing Yiou; Lu Huaxiang

    2013-01-01

    This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier (LNA), current-reuse V—I converter, active double balanced mixer and transimpedance amplifier for short range device (SRD) applications. With the proposed current-reuse LNA, the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices. The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm 2 . Operating in 433 MHz band, the measurement results show the RF front-end achieves a conversion gain of 29.7 dB, a double side band noise figure of 9.7 dB, an input referenced third intercept point of −24.9 dBm with only 1.44 mA power consumption from 1.8 V supply. Compared to other reported front-ends, it has an advantage in power consumption. (semiconductor integrated circuits)

  5. Binary rf pulse compression experiment at SLAC

    International Nuclear Information System (INIS)

    Lavine, T.L.; Spalek, G.; Farkas, Z.D.; Menegat, A.; Miller, R.H.; Nantista, C.; Wilson, P.B.

    1990-06-01

    Using rf pulse compression it will be possible to boost the 50- to 100-MW output expected from high-power microwave tubes operating in the 10- to 20-GHz frequency range, to the 300- to 1000-MW level required by the next generation of high-gradient linacs for linear for linear colliders. A high-power X-band three-stage binary rf pulse compressor has been implemented and operated at the Stanford Linear Accelerator Center (SLAC). In each of three successive stages, the rf pulse-length is compressed by half, and the peak power is approximately doubled. The experimental results presented here have been obtained at low-power (1-kW) and high-power (15-MW) input levels in initial testing with a TWT and a klystron. Rf pulses initially 770 nsec long have been compressed to 60 nsec. Peak power gains of 1.8 per stage, and 5.5 for three stages, have been measured. This corresponds to a peak power compression efficiency of about 90% per stage, or about 70% for three stages, consistent with the individual component losses. The principle of operation of a binary pulse compressor (BPC) is described in detail elsewhere. We recently have implemented and operated at SLAC a high-power (high-vacuum) three-stage X-band BPC. First results from the high-power three-stage BPC experiment are reported here

  6. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    OpenAIRE

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses ...

  7. Effect of power variation on wettability and optical properties of co ...

    Indian Academy of Sciences (India)

    The present paper deals with deposition of titanium and zirconium oxynitride films prepared from cosputtering titanium and zirconium targets by reactive RF magnetron sputtering. The effect of power variation on various properties of the deposited films is analysed. The film gets transformed from amorphous to well crystalline ...

  8. Commissioning of the 400 MHz LHC RF System

    CERN Document Server

    Ciapala, Edmond; Baudrenghien, P; Brunner, O; Butterworth, A; Linnecar, T; Maesen, P; Molendijk, J; Montesinos, E; Valuch, D; Weierud, F

    2008-01-01

    The installation of the 400 MHz superconducting RF system in LHC is finished and commissioning is under way. The final RF system comprises four cryo-modules each with four cavities in the LHC tunnel straight section round IP4. Also underground in an adjacent cavern shielded from the main tunnel are the sixteen 300 kW klystron RF power sources with their high voltage bunkers, two Faraday cages containing RF feedback and beam control electronics, and racks containing all the slow controls. The system and the experience gained during commissioning will be described. In particular, results from conditioning the cavities and their movable main power couplers and the setting up of the low level RF feedbacks will be presented.

  9. Discussion of high brightness rf linear accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1987-01-01

    The fundamental aspects of high-brightness rf linacs are outlined, showing the breadth and complexity of the technology and indicating that synergism with advancements in other areas is important. Areas of technology reviewed include ion sources, injectors, rf accelerator structures, beam dynamics, rf power, and automatic control

  10. Elements of the system for RF power input into linear accelerator-injector for booster

    International Nuclear Information System (INIS)

    Mazurov, E.V.; Mal'tsev, I.G.; Shalashov, I.M.

    1981-01-01

    The elements of the original system for RF power input into 30 MeV linear accelerator-injector for the IHEP proton synchrotron booster are considered. A 3 dB coaxial directional coupler (T-bridge) is describedd. The characteristics of the bridge containing elements and the parameters of ballast matched load are given [ru

  11. High RF power test of a lower hybrid module mock-up in Carbon Fiber Composite

    International Nuclear Information System (INIS)

    Maebara, Sunao; Kiyono, Kimihiro; Seki, Masami

    1997-11-01

    A mock-up module of a Lower Hybrid Current Drive antenna module of a Carbon Fiber Composite (CFC) was fabricated for the development of heat resistive front facing the plasma. This module is made from CFC plates and rods which are copper coated to reduce the RF losses. The withstand-voltage, the RF properties and outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns. During these tests, the module temperature was increasing from 100-200degC to 400-500degC. It was also checked that high power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H 2 at a pressure of 5 x 10 -2 Pa. No significant change in the reflection coefficient is measured after the long pulse operation. During a long pulse, the power reflection increases during the pulse typically from 0.8 % to 1.3 %. It is concluded that the outgassing rate of Cu-plated CFC is about 6-7 times larger than of Dispersion Strengthened Copper (DSC) module at the module temperature of 300degC. No significant increase of the global outgassing of the CFC module was measured after hydrogen prefilling. After the test, visual inspection revealed that peeling of the copper coating occurred at one end of the module only on a very small area (0.2 cm 2 ). It is assessed that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (author)

  12. High RF power test of a lower hybrid module mock-up in carbon fiber composite

    International Nuclear Information System (INIS)

    Goniche, M.; Bibet, P.; Brossaud, J.; Cano, V.; Froissard, P.; Kazarian, F.; Rey, G.; Maebara, S.; Kiyono, K.; Seki, M.; Suganuma, K.; Ikeda, Y.; Imai, T.

    1999-02-01

    A mock-up module of a Lower Hybrid Current Drive antenna module of a Carbon Fiber Composite (CFC) was fabricated for the development of heat resistive front facing the plasma. This module is made from CFC plates and rods which are copper coated to reduce the RF losses. The withstand-voltage, the RF properties and outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns. During these tests, the module temperature was increasing from 100-200 deg. C to 400-500 deg. C. It was also checked that high power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H 2 at a pressure of 5 x 10 -2 Pa. No significant change in the reflection coefficient is measured after the long pulse operation. During a long pulse, the power reflection increases during the pulse typically from 0.8% to 1.3%. It is concluded that the outgassing rate of Cu-plated CFC is about 6 times larger than of Dispersion Strengthened Copper (DSC) module at the module temperature of 300 deg. C. No significant increase of the global outgassing of the CFC module was measured after hydrogen pre-filling. After the test, visual inspection revealed that peeling of the copper coating occurred at one end of the module only on a very small area (0.2 cm 2 ). It is assessed that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (authors)

  13. Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

    2016-09-05

    N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  14. RF Processing of the Couplers for the SNS Superconducting Cavities

    International Nuclear Information System (INIS)

    Y.Kang; I.E. Campisi; D. Stout; A. Vassioutchenko; M. Stirbet; M. Drury; T. Powers

    2005-01-01

    All eighty-one fundamental power couplers for the 805 MHz superconducting cavities of the SNS linac have been RF conditioned and installed in the cryomodules successfully. The couplers were RF processed at JLAB or at the SNS in ORNL: more than forty couplers have been RF conditioned in the SNS RF Test Facility (RFTF) after the first forty couplers were conditioned at JLAB. The couplers were conditioned up to 650 kW forward power at 8% duty cycle in traveling and standing waves. They were installed on the cavities in the cryomodules and then assembled with the airside waveguide transitions. The couplers have been high power RF tested with satisfactory accelerating field gradients in the cooled cavities

  15. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  16. Wirelessly powered microfluidic dielectrophoresis devices using printable RF circuits.

    Science.gov (United States)

    Qiao, Wen; Cho, Gyoujin; Lo, Yu-Hwa

    2011-03-21

    We report the first microfluidic device integrated with a printed RF circuit so the device can be wirelessly powered by a commercially available RFID reader. For conventional dielectrophoresis devices, electrical wires are needed to connect the electric components on the microchip to external equipment such as power supplies, amplifiers, function generators, etc. Such a procedure is unfamiliar to most clinicians and pathologists who are used to working with a microscope for examination of samples on microscope slides. The wirelessly powered device reported here eliminates the entire need for wire attachments and external instruments so the operators can use the device in essentially the same manner as they do with microscope slides. The integrated circuit can be fabricated on a flexible plastic substrate at very low cost using a roll-to-roll printing method. Electrical power at 13.56 MHz transmitted by a radio-frequency identification (RFID) reader is inductively coupled to the printed RFIC and converted into 10 V DC (direct current) output, which provides sufficient power to drive a microfluidic device to manipulate biological particles such as beads and proteins via the DC dielectrophoresis (DC-DEP) effect. To our best knowledge, this is the first wirelessly powered microfluidic dielectrophoresis device. Although the work is preliminary, the device concept, the architecture, and the core technology are expected to stimulate many efforts in the future and transform the technology to a wide range of clinical and point-of-care applications. This journal is © The Royal Society of Chemistry 2011

  17. rf coupler technology for fusion applications

    International Nuclear Information System (INIS)

    Hoffman, D.J.

    1983-01-01

    Radio frequency (rf) oscillations at critical frequencies have successfully provided a means to convey power to fusion plasmas due to the electrical-magnetic properties of the plasma. While large rf systems to couple power to the plasma have been designed, built, and tested, the main link to the plasma, the coupler, is still in an evolutionary stage of development. Design and fabrication of optimal antennas for fusion applications are complicated by incomplete characterizations of the harsh plasma environment and of coupling mechanisms. A brief description of rf coupler technology required for plasma conditions is presented along with an assessment of the status and goals of coupler development

  18. ADX: a high field, high power density, advanced divertor and RF tokamak

    Science.gov (United States)

    LaBombard, B.; Marmar, E.; Irby, J.; Terry, J. L.; Vieira, R.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; Baek, S.; Beck, W.; Bonoli, P.; Brunner, D.; Doody, J.; Ellis, R.; Ernst, D.; Fiore, C.; Freidberg, J. P.; Golfinopoulos, T.; Granetz, R.; Greenwald, M.; Hartwig, Z. S.; Hubbard, A.; Hughes, J. W.; Hutchinson, I. H.; Kessel, C.; Kotschenreuther, M.; Leccacorvi, R.; Lin, Y.; Lipschultz, B.; Mahajan, S.; Minervini, J.; Mumgaard, R.; Nygren, R.; Parker, R.; Poli, F.; Porkolab, M.; Reinke, M. L.; Rice, J.; Rognlien, T.; Rowan, W.; Shiraiwa, S.; Terry, D.; Theiler, C.; Titus, P.; Umansky, M.; Valanju, P.; Walk, J.; White, A.; Wilson, J. R.; Wright, G.; Zweben, S. J.

    2015-05-01

    The MIT Plasma Science and Fusion Center and collaborators are proposing a high-performance Advanced Divertor and RF tokamak eXperiment (ADX)—a tokamak specifically designed to address critical gaps in the world fusion research programme on the pathway to next-step devices: fusion nuclear science facility (FNSF), fusion pilot plant (FPP) and/or demonstration power plant (DEMO). This high-field (⩾6.5 T, 1.5 MA), high power density facility (P/S ˜ 1.5 MW m-2) will test innovative divertor ideas, including an ‘X-point target divertor’ concept, at the required performance parameters—reactor-level boundary plasma pressures, magnetic field strengths and parallel heat flux densities entering into the divertor region—while simultaneously producing high-performance core plasma conditions that are prototypical of a reactor: equilibrated and strongly coupled electrons and ions, regimes with low or no torque, and no fuelling from external heating and current drive systems. Equally important, the experimental platform will test innovative concepts for lower hybrid current drive and ion cyclotron range of frequency actuators with the unprecedented ability to deploy launch structures both on the low-magnetic-field side and the high-magnetic-field side—the latter being a location where energetic plasma-material interactions can be controlled and favourable RF wave physics leads to efficient current drive, current profile control, heating and flow drive. This triple combination—advanced divertors, advanced RF actuators, reactor-prototypical core plasma conditions—will enable ADX to explore enhanced core confinement physics, such as made possible by reversed central shear, using only the types of external drive systems that are considered viable for a fusion power plant. Such an integrated demonstration of high-performance core-divertor operation with steady-state sustainment would pave the way towards an attractive pilot plant, as envisioned in the ARC concept

  19. Compact high efficiency, light weight 200-800 MHz high power RF source

    International Nuclear Information System (INIS)

    Shrader, M.B.; Preist, D.H.

    1985-01-01

    There has long been a need for a new more efficient less bulky high power RF power source to drive accelerators in the 200 to 800 MHz region. Results on a recent 5-year EIMAC sponsored R and D program which have lead to the introduction of the Klystrode for UHF television and troposcatter applications indicate that at power levels of 1MW or more efficiencies in excess of 75% can be obtained at 450 MHz. Efficiencies of this order coupled with potential size and weight parameters which are a fraction of those of existing high power UHF generators open up new applications which heretofore would have been impractical if not impossible. Measurements at 470 MHz on existing Klystrodes are given. Projected operating conditions for a 1MW 450 MHz Klystrode having an overall length of 60 inches and a total tube, circuit, and magnet weight of 250 pounds is presented

  20. Tunable Q-Factor RF Cavity

    Energy Technology Data Exchange (ETDEWEB)

    Balcazar, Mario D. [Fermilab; Yonehara, Katsuya [Fermilab; Moretti, Alfred [Fermilab; Kazakevitch, Gregory [Fermilab

    2018-01-01

    Intense neutrino beam is a unique probe for researching beyond the standard model. Fermilab is the main institution to produce the most powerful and widespectrum neutrino beam. From that respective, a radiation robust beam diagnostic system is a critical element in order to maintain the quality of the neutrino beam. Within this context, a novel radiation-resistive beam profile monitor based on a gasfilled RF cavity is proposed. The goal of this measurement is to study a tunable Qfactor RF cavity to determine the accuracy of the RF signal as a function of the quality factor. Specifically, measurement error of the Q-factor in the RF calibration is investigated. Then, the RF system will be improved to minimize signal error.

  1. Practical RF system design

    CERN Document Server

    Egan, William F

    2003-01-01

    he ultimate practical resource for today's RF system design professionals Radio frequency components and circuits form the backbone of today's mobile and satellite communications networks. Consequently, both practicing and aspiring industry professionals need to be able to solve ever more complex problems of RF design. Blending theoretical rigor with a wealth of practical expertise, Practical RF System Design addresses a variety of complex, real-world problems that system engineers are likely to encounter in today's burgeoning communications industry with solutions that are not easily available in the existing literature. The author, an expert in the field of RF module and system design, provides powerful techniques for analyzing real RF systems, with emphasis on some that are currently not well understood. Combining theoretical results and models with examples, he challenges readers to address such practical issues as: * How standing wave ratio affects system gain * How noise on a local oscillator will affec...

  2. Power deposition on misaligned edges in COMPASS

    Directory of Open Access Journals (Sweden)

    R. Dejarnac

    2017-08-01

    Full Text Available If the decision is made not to apply a toroidal chamfer to tungsten monoblocks at ITER divertor vertical targets, exposed leading edges will arise as a result of assembly tolerances between adjacent plasma-facing components. Then, the advantage of glancing magnetic field angles for spreading plasma heat flux on top surfaces is lost at the misaligned edges with an interaction occurring at near normal incidence, which can drive melting for the expected inter-ELM heat fluxes. A dedicated experiment has been performed on the COMPASS tokamak to thoroughly study power deposition on misaligned edges using inner-wall limited discharges on a special graphite tile presenting gaps and leading edges directly viewed by a high resolution infra-red camera. The parallel power flux deducted from the unperturbed measurement far from the gap is fully consistent with the observed temperature increase at the leading edge, respecting the power balance. All the power flowing into the gap is deposited at the leading edge and no mitigation factor is required to explain the thermal response. Particle-in-cell simulations show that the ion Larmor smoothing effect is weak and that the power deposition on misaligned edges is well described by the optical approximation because of an electron dominated regime associated with non-ambipolar parallel current flow.

  3. Power deposition to the facing components in Tore-Supra

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis, P.; Koski, J.; Watkins, J.

    1990-01-01

    The modifications of the power scrape-off length, λ q and power deposition are studied for various configurations in ohmic Tore-Supra plasmas. The plasma is either touching the horizontal limiter alone, the full set of six pump limiters or the inner bumper limiter. All configurations are with and without the ergodic divertor system energized. From a comparison of the infrared images of the limiter we derived that the λ q for power deposition was slightly less than 9±1 mm in ohmic plasmas which is in agreement with the predicted design value of 10 mm. Using the six limiters, instead of one, does not modify λ q significantly, but leads to small asymmetries. The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreases. These λ q values have been independently determined by calorimetric measurements on the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases. In the presence of the ergodic divertor we observe a broadening of the scrape-off layer, the e-folding length for power deposition reaching 2.5 cm. Large asymmetries in the power deposition can be seen on the front face of the limiter, leading to the formation of hot spots at the leading edges. (orig.)

  4. Power deposition to the facing components in Tore-Supra

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis, P.

    1990-01-01

    The modification of power scrape-off-length, λq, and power deposition are studied during various configurations in ohmic TORE-SUPRA plasmas. The plasma is either leaning on the horizontal limiter alone, on the full set of 6 pump limiters or on the inner bumper limiter, all configurations with and without the ergodic divertor system energised. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1 mm) in ohmic plasma which is in agreement with the predicted design value of 10 mm. Inserting the 6 limiters, instead of 1, does not modify significantly λq, but lead to small asymmetries. The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased. These λq values have been independently determined by calorimetric measurements done on the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases. In the presence of the ergodic divertor we observe a broadening of the scrape off layer, the e-folding length for power deposition reaching 2.5 cm. Large asymmetries on power deposition can be seen on the front face of the limiter leading to the formation of hot spots at the leading edges

  5. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  6. Optimizing RF energy transport : channel modelling and transmit antenna and rectenna design

    NARCIS (Netherlands)

    Visser, H.J.

    2012-01-01

    For powering wireless sensors in buildings rechargeable batteries may be used, being charged remotely by dedicated RF sources. RF energy transport suffers from path loss and therefore the RF power available on a rectenna will be very low. As a consequence, the RF-to-DC conversion efficiency will

  7. Control of thermal therapies with moving power deposition field

    International Nuclear Information System (INIS)

    Arora, Dhiraj; Minor, Mark A; Skliar, Mikhail; Roemer, Robert B

    2006-01-01

    A thermal therapy feedback control approach to control thermal dose using a moving power deposition field is developed and evaluated using simulations. A normal tissue safety objective is incorporated in the controller design by imposing constraints on temperature elevations at selected normal tissue locations. The proposed control technique consists of two stages. The first stage uses a model-based sliding mode controller that dynamically generates an 'ideal' power deposition profile which is generally unrealizable with available heating modalities. Subsequently, in order to approximately realize this spatially distributed idealized power deposition, a constrained quadratic optimizer is implemented to compute intensities and dwell times for a set of pre-selected power deposition fields created by a scanned focused transducer. The dwell times for various power deposition profiles are dynamically generated online as opposed to the commonly employed a priori-decided heating strategies. Dynamic intensity and trajectory generation safeguards the treatment outcome against modelling uncertainties and unknown disturbances. The controller is designed to enforce simultaneous activation of multiple normal tissue temperature constraints by rapidly switching between various power deposition profiles. The hypothesis behind the controller design is that the simultaneous activation of multiple constraints substantially reduces treatment time without compromising normal tissue safety. The controller performance and robustness with respect to parameter uncertainties is evaluated using simulations. The results demonstrate that the proposed controller can successfully deliver the desired thermal dose to the target while maintaining the temperatures at the user-specified normal tissue locations at or below the maximum allowable values. Although demonstrated for the case of a scanned focused ultrasound transducer, the developed approach can be extended to other heating modalities with

  8. The RF Design of an HOM Polarized RF Gun for the ILC

    International Nuclear Information System (INIS)

    Wang, J.W.; Clendenin, J.E.; Colby, E.R.; Miller, R.A.; Lewellen, J.W.

    2006-01-01

    The ILC requires a polarized electron beam. While a highly polarized beam can be produced by a GaAs-type cathode in a DC gun of the type currently in use at SLAC, JLAB and elsewhere, the ILC injector system can be simplified and made more efficient if a GaAs-type cathode can be combined with a low emittance RF gun. Since this type of cathode is known to be extremely sensitive to vacuum contamination including back bombardment by electrons and ions, any successful polarized RF gun must have a significantly improved operating vacuum compared to existing RF guns. We present a new RF design for an L-Band normal conducting (NC) RF gun for the ILC polarized electron source. This design incorporates a higher order mode (HOM) structure, whose chief virtue in this application is an improved conductance for vacuum pumping on the cathode. Computer simulation models have been used to optimize the RF parameters with two principal goals: first to minimize the required RF power; second to reduce the peak surface field relative to the field at the cathode in order to suppress field emitted electron bombardment. The beam properties have been simulated initially using PARMELA. Vacuum and other practical issues for implementing this design are discussed

  9. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    International Nuclear Information System (INIS)

    Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

    2014-01-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012 © . RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance

  10. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    Science.gov (United States)

    Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

    2014-02-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012©. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

  11. Analysis of RF section of 250 kW CW C-Band high power klystron

    International Nuclear Information System (INIS)

    Badola, Richa; Kaushik, Meenu; Baloda, Suman; Kirti; Vrati; Lamba, O.S.; Joshi, L.M.

    2012-01-01

    Klystron is a microwave tube which is used as a power amplifier in various applications like radar, particle accelerators and thermonuclear reactors. The paper deals with the analysis of RF section of 250 kW CW C band high power klystron for 50 to 60 kV beam voltage The simulation is done using Poisson's superfish and AJ disk software's Design of cavity is done using superfish. The result of superfish is used to decide the dimensions of the geometry of the cavity and AJ disk is used to determined the centre to centre distances between the cavities in order to obtain the desired powers. (author)

  12. Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

    Directory of Open Access Journals (Sweden)

    Jang T.S.

    2016-01-01

    Full Text Available We report on the fabrication of Al-doped ZnO (AZO transparent-conductive oxide (TCO films on glass substrates by RF-sputtering, their physical properties, and the effect of thermal annealing on the AZO TCO films. The AZO films on glass substrates have a preferred orientation of the c-axis, irrespective of deposition conditions, which means that the AZO films have textured structures along the c-axis. The film thickness and surface roughness in the AZO films are proportional to plasma power and deposition time, while they are inverse-proportional to working gas ratio and working pressure. The AZO films have the optical transmittance over 80 % in the wavelength range of 400 – 1000 nm, irrespective of deposition conditions. The plasma power and the deposition time relatively give a large influence on the optical transmittance, compared to the working gas ratio and the working pressure. The AZO films deposited at room temperature have poor electrical properties, while the thermal annealing under Ar ambient significantly improves the electrical conductivity of the AZO films: an as-deposited sample has an electrical resistivity of 87 Wcm and an electron concentration of 1.3´1017 cm−3, while the annealed sample has an electrical resistivity of 3.7´10-2 Wcm and an electron concentration of 1.2´1020 cm−3.

  13. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  14. Liquid Metal Droplet and Micro Corrugated Diaphragm RF-MEMS for reconfigurable RF filters

    Science.gov (United States)

    Irshad, Wasim

    Widely Tunable RF Filters that are small, cost-effective and offer ultra low power consumption are extremely desirable. Indeed, such filters would allow drastic simplification of RF front-ends in countless applications from cell phones to satellites in space by replacing switched-array of static acoustic filters and YIG filters respectively. Switched array of acoustic filters are de facto means of channel selection in mobile applications such as cell phones. SAW and BAW filters satisfy most criteria needed by mobile applications such as low cost, size and power consumption. However, the trade-off is a significant loss of 3-4 dB in modern cell phone RF front-end. This leads to need for power-hungry amplifiers and short battery life. It is a necessary trade-off since there are no better alternatives. These devices are in mm scale and consume mW. YIG filters dominate applications where size or power is not a constraint but demand excellent RF performance like low loss and high tuning ratio. These devices are measured in inches and require several watts to operate. Clearly, a tunable RF filter technology that would combine the cost, size and power consumption benefits of acoustic filters with excellent RF performance of YIG filters would be extremely desirable and imminently useful. The objective of this dissertation is to develop such a technology based upon RF-MEMS Evanescent-mode cavity filter. Two highly novel RF-MEMS devices have been developed over the course of this PhD to address the unique MEMS needs of this technology. The first part of the dissertation is dedicated to introducing the fundamental concepts of tunable cavity resonators and filters. This includes the physics behind it, key performance metrics and what they depend on and requirements of the MEMS tuners. Initial gap control and MEMS attachment method are identified as potential hurdles towards achieving very high RF performance. Simple and elegant solutions to both these issues are discussed in

  15. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. RF pulse compression in the NLC test accelerator at SLAC

    International Nuclear Information System (INIS)

    Lavine, T.L.

    1995-01-01

    At the Stanford Linear Accelerator Center (SLAC), the authors are designing a Next Linear Collider (NLC) with linacs powered by X-band klystrons with rf pulse compression. The design of the linac rf system is based on X-band prototypes which have been tested at high power, and on a systems-integration test - the Next Linear Collider Test Accelerator (NLCTA) - which is currently under construction at SLAC. This paper discusses some of the systems implications of rf pulse compression, and the use of pulse compression in the NLCTA, both for peak power multiplication and for controlling, by rf phase modulation, intra-pulse variations in the linac beam energy

  17. Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kwangseok; Han, Seungwoo; Park, Kyoungwan; Sok, Junghyun

    2006-01-01

    In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 .deg. C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O 2 or N 2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O 2 atmosphere turned out to be much larger than that of the post-annealed films in a N 2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O 2 content and the top electrode improve the electroresistance.

  18. n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

    Directory of Open Access Journals (Sweden)

    Zhiqiang Zhang

    2017-06-01

    Full Text Available To achieve radio frequency (RF power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively.

  19. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  20. RF System description for the ground test accelerator radio-frequency quadrupole

    International Nuclear Information System (INIS)

    Regan, A.H.; Brittain, D.; Rees, D.E.; Ziomek, D.

    1992-01-01

    This paper describes the RF system being used to provide RF power and to control the cavity field for the ground test accelerator (GTA) radio-frequency quadrupole (RFQ). The RF system consists of a low-level RF (LLRF) control system, and RF Reference generation subsystem, and a tetrode as a high-power amplifier (HPA) that can deliver up to 300 kW of peak power to the RFQ cavity at a 2% duty factor. The LLRF control system implements in-phase and quadrature (I and Q) control to maintain the cavity field within tolerances of 0.5% in amplitude and 0.5 degrees in phase in the presence of beam-induced instabilities

  1. Compression and radiation of high-power short rf pulses. II. A novel antenna array design with combined compressor/radiator elements

    KAUST Repository

    Sirenko, Kostyantyn

    2011-01-01

    The paper discusses the radiation of compressed high power short RF pulses using two different types of antennas: (i) A simple monopole antenna and (ii) a novel array design, where each of the elements is constructed by combining a compressor and a radiator. The studies on the monopole antenna demonstrate the possibility of a high power short RF pulse\\'s efficient radiation even using simple antennas. The studies on the novel array design demonstrate that a reduced size array with lower pulse distortion and power decay can be constructed by assembling the array from elements each of which integrates a compressor and a radiator. This design idea can be used with any type of antenna array; in this work it is applied to a phased array.

  2. Rf and space-charge induced emittances in laser-driven rf guns

    International Nuclear Information System (INIS)

    Kim, Kwang-Je; Chen, Yu-Jiuan.

    1988-10-01

    Laser-driven rf electron guns are potential sources of high-current, low-emittance, short bunch-length electron beams, which are required for many advanced accelerator applications, such as free-electron lasers and injectors for high-energy machines. In such guns the design of which was pioneered at Los Alamos National Laboratory and which is currently being developed at several other laboratories, a high-power laser beam illuminates a photo-cathode surface placed on an end wall of an rf cavity. The main advantages of this type of gun are that the time structure of the electron beam is controlled by the laser, eliminating the need for bunchers, and that the electric field in rf cavities can be made very strong, so that the effects due to space-charge repulsion can be minimized. In this paper, we present an approximate but simple analysis for the transverse and longitudinal emittances in rf guns that takes into account both the time variation of the rf field and the space-charge effect. The results are compared and found to agree well with those from simulation. 7 refs., 6 figs

  3. LEDA RF distribution system design and component test results

    International Nuclear Information System (INIS)

    Roybal, W.T.; Rees, D.E.; Borchert, H.L.; McCarthy, M.; Toole, L.

    1998-01-01

    The 350 MHz and 700 MHz RF distribution systems for the Low Energy Demonstration Accelerator (LEDA) have been designed and are currently being installed at Los Alamos National Laboratory. Since 350 MHz is a familiar frequency used at other accelerator facilities, most of the major high-power components were available. The 700 MHz, 1.0 MW, CW RF delivery system designed for LEDA is a new development. Therefore, high-power circulators, waterloads, phase shifters, switches, and harmonic filters had to be designed and built for this applications. The final Accelerator Production of Tritium (APT) RF distribution systems design will be based on much of the same technology as the LEDA systems and will have many of the RF components tested for LEDA incorporated into the design. Low power and high-power tests performed on various components of these LEDA systems and their results are presented here

  4. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    Energy Technology Data Exchange (ETDEWEB)

    Rimjaem, S., E-mail: sakhorn.rimjaem@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand); Kusoljariyakul, K.; Thongbai, C. [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand)

    2014-02-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012{sup ©}. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

  5. Lower hybrid current drive and heating experiments at the 1 MW rf power level on Alcator C

    International Nuclear Information System (INIS)

    Porkolab, M.; Lloyd, B.; Schuss, J.J.

    1983-07-01

    Lower hybrid current drive experiments were carried out in the density range 1.0 x 10 13 less than or equal to anti n(cm -3 ) less than or equal to 1.0 x 10 14 , at magnetic fields 6.0 less than or equal to B(T) less than or equal to 10. Using one 16 waveguide array, plasma currents of 150 to 200 kA have been driven by rf powers up to 600 kW for times greater than 100 msec at anti n/sub e/ up to 5 x 10 13 cm -3 . With two arrays at anti n/sub e/ approx. = 4.3 x 10 13 cm -3 at B/sub T/ = 10 T, plasma currents of 160 kA have been maintained by the rf power for 300 msec with zero loop voltage and constant internal inductance

  6. Can we estimate the cellular phone RF peak output power with a simple experiment?

    Science.gov (United States)

    Fioreze, Maycon; dos Santos Junior, Sauli; Goncalves Hönnicke, Marcelo

    2016-07-01

    Cellular phones are becoming increasingly useful tools for students. Since cell phones operate in the microwave bandwidth, they can be used to motivate students to demonstrate and better understand the properties of electromagnetic waves. However, since these waves operate at higher frequencies (L-band, from 800 MHz to 2 GHz) it is not simple to detect them. Usually, expensive real-time high frequency oscilloscopes are required. Indirect measurements are also possible through heat-based and diode-detector-based radio-frequency (RF) power sensors. Another didactic and intuitive way is to explore a simple and inexpensive detection system, based on the interference effect caused in the electronic circuit of TV and PC soundspeakers, and to try to investigate different properties of the cell phones’ RF electromagnetic waves, such as its power and modulated frequency. This manuscript proposes a trial to quantify these measurements, based on a simple Friis equation model and the time constant of the circuit used in the detection system, in order to show it didactically to the students and even allow them also to explore such a simple detection system at home.

  7. Can we estimate the cellular phone RF peak output power with a simple experiment?

    International Nuclear Information System (INIS)

    Fioreze, Maycon; Hönnicke, Marcelo Goncalves; Dos Santos Junior, Sauli

    2016-01-01

    Cellular phones are becoming increasingly useful tools for students. Since cell phones operate in the microwave bandwidth, they can be used to motivate students to demonstrate and better understand the properties of electromagnetic waves. However, since these waves operate at higher frequencies (L-band, from 800 MHz to 2 GHz) it is not simple to detect them. Usually, expensive real-time high frequency oscilloscopes are required. Indirect measurements are also possible through heat-based and diode-detector-based radio-frequency (RF) power sensors. Another didactic and intuitive way is to explore a simple and inexpensive detection system, based on the interference effect caused in the electronic circuit of TV and PC soundspeakers, and to try to investigate different properties of the cell phones’ RF electromagnetic waves, such as its power and modulated frequency. This manuscript proposes a trial to quantify these measurements, based on a simple Friis equation model and the time constant of the circuit used in the detection system, in order to show it didactically to the students and even allow them also to explore such a simple detection system at home. (paper)

  8. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    International Nuclear Information System (INIS)

    Biederman, H.; Holland, L.

    1983-01-01

    Fluorocarbon films have been prepared by plasma polymerization of CF 4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF 4 [25%]-argon[75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF 4 [87%]-argon[13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF 4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined. (orig.)

  9. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    Energy Technology Data Exchange (ETDEWEB)

    Biederman, H.; Holland, L. (Sussex Univ., Brighton (UK). Lab. for Plasma Materials Processing)

    1983-07-01

    Fluorocarbon films have been prepared by plasma polymerization of CF/sub 4/ using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an R.F. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF/sub 4/(25%)-argon(75%) mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF/sub 4/(87%)-argon(13%) were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF/sub 4/ as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined.

  10. ORIC RF system: preparation for HHIRF

    International Nuclear Information System (INIS)

    Mosko, S.W.; Rylander, J.D.; Schulze, G.K.

    1977-01-01

    The integration of the Oak Ridge Isochronous Cyclotron (ORIC) into the Holifield Heavy Ion Research Facility (HHIRF) requires several rf system modifications to permit injection of ion beams from the 25 MV tandem electrostatic accelerator into ORIC. A new dee eliminates structural interference with the injected beam path and provides an opportunity to improve the mechanical stability of the resonator and to reduce rf voltage gradients in areas susceptible to sparking. Space for structural improvements is realized by reducing the ion beam aperture from 4.8 cm to 2.4 cm. The complexity of the original ORIC rf power system was substantially reduced. A new broadband solid state driver amplifier between the frequency synthesizer and the main power amplifier eliminates most circuit tuning and permits the use of a new simplified dee rf voltage regulator loop. Most of the remaining instrumentation and control circuitry is TTL compatible and will eventually tie to the ORIC computer control system through a CAMAC interface

  11. Fast wave power flow along SOL field lines in NSTX

    Science.gov (United States)

    Perkins, R. J.; Bell, R. E.; Diallo, A.; Gerhardt, S.; Hosea, J. C.; Jaworski, M. A.; Leblanc, B. P.; Kramer, G. J.; Phillips, C. K.; Roquemore, L.; Taylor, G.; Wilson, J. R.; Ahn, J.-W.; Gray, T. K.; Green, D. L.; McLean, A.; Maingi, R.; Ryan, P. M.; Jaeger, E. F.; Sabbagh, S.

    2012-10-01

    On NSTX, a major loss of high-harmonic fast wave (HHFW) power can occur along open field lines passing in front of the antenna over the width of the scrape-off layer (SOL). Up to 60% of the RF power can be lost and at least partially deposited in bright spirals on the divertor floor and ceiling [1,2]. The flow of HHFW power from the antenna region to the divertor is mostly aligned along the SOL magnetic field [3], which explains the pattern of heat deposition as measured with infrared (IR) cameras. By tracing field lines from the divertor back to the midplane, the IR data can be used to estimate the profile of HHFW power coupled to SOL field lines. We hypothesize that surface waves are being excited in the SOL, and these results should benchmark advanced simulations of the RF power deposition in the SOL (e.g., [4]). Minimizing this loss is critical optimal high-power long-pulse ICRF heating on ITER while guarding against excessive divertor erosion.[4pt] [1] J.C. Hosea et al., AIP Conf Proceedings 1187 (2009) 105. [0pt] [2] G. Taylor et al., Phys. Plasmas 17 (2010) 056114. [0pt] [3] R.J. Perkins et al., to appear in Phys. Rev. Lett. [0pt] [4] D.L. Green et al., Phys. Rev. Lett. 107 (2011) 145001.

  12. Rf system specifications for a linear accelerator

    International Nuclear Information System (INIS)

    Young, A.; Eaton, L.E.

    1992-01-01

    A linear accelerator contains many systems; however, the most complex and costly is the RF system. The goal of an RF system is usually simply stated as maintaining the phase and amplitude of the RF signal within a given tolerance to accelerate the charged particle beam. An RF system that drives a linear accelerator needs a complete system specification, which should contain specifications for all the subsystems (i.e., high-power RF, low-level RF, RF generation/distribution, and automation control). This paper defines a format for the specifications of these subsystems and discusses each RF subsystem independently to provide a comprehensive understanding of the function of each subsystem. This paper concludes with an example of a specification spreadsheet allowing one to input the specifications of a subsystem. Thus, some fundamental parameters (i.e., the cost and size) of the RF system can be determined

  13. RF windows used at s-band pulsed klystrons in KEK linac

    Energy Technology Data Exchange (ETDEWEB)

    Michizono, S.; Saito, Y. [KEK, National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1997-04-01

    The breakdown of the alumina RF-windows used in high-power klystrons is one of the most serious problems in the development of klystrons. This breakdown results from excess heating of alumina due to multipactor bombardments and/or localized RF dissipations. A statistical research of window materials was carried out, and high-power tests were performed in order to develop RF windows having high durability for the KEKB klystrons. The breakdown mechanism of RF windows is being considered. An improved RF window installed in a KEKB klystron is also being tested. (J.P.N)

  14. Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-An [Department of Mechanical Engineering, National Central University, Taiwan (China); Lin, Jing-Chie, E-mail: jclincom@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Taiwan (China); Institute of Material Science and Engineering, National Central University, Taiwan (China); Chang, Yu-Fong [Department of Mechanical Engineering, National Central University, Taiwan (China); Chyou, San-Der [Power Research Institute, Taiwan Power Company, Taiwan (China); Peng, Kun-Cheng [Department of Materials Science and Engineering, Mingchi University of Technology, Taiwan (China)

    2012-06-01

    Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E{sub g}) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 Multiplication-Sign 10{sup -2} {Omega} cm to 3.29 Multiplication-Sign 10{sup -3} {Omega} cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV-visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier

  15. Development of a movable plunger tuner for the high-power RF cavity for the PEP-II B-factory

    International Nuclear Information System (INIS)

    Schwarz, H.D.; Fant, K.; Judkins, J.G.

    1997-05-01

    A 10 cm diameter by 5 cm travel plunger tuner was developed for the PEP-II RF copper cavity system. The single cell cavity including the tuner is designed to operate up to 150 kW of dissipated RF power are specially placed 8.5 cm away from the inside wall of the cavity to avoid fundamental and higher order mode resonances. The spring fingers are made of dispersion-strengthened copper to accommodate relatively high heating. The design, alignment, testing and performance of the tuner is described

  16. Evaluation of gamma ray durability and its application of shielded RF tags

    International Nuclear Information System (INIS)

    Teraura, Nobuyuki; Ito, Kunio; Kobayashi, Daisuke; Sakurai, Kouichi

    2015-01-01

    In this study, the RF (Radio Frequency) tag with radiation shield is developed and its gamma ray durability is evaluated. RFID (RF Identification) is a radio-wave-based identification technology that can be used for various items. RF tags find use in many applications, including item tracing, access control, etc. RF tags can be classified as active RF tags, which have inbuilt voltaic cells, and passive RF tags without these cells. Passive RF tags, known for their low price and durability, are used in various fields. For instance, they are used for equipment maintenance in factories and thermal power plants. Several frequencies are used for RF tags. Further, RF tagging on the UHF (Ultra High Frequency) frequencies allows a communication range of approximately 10 m, and thus, remote reading is possible. When used in radiation environments such as in nuclear power plants, remote reading can contribute to the reduction of radiation exposure. However, because semiconductors are the primary elements used in the manufacture of RF tags, they can be damaged by radiation, and operational errors can occur. Therefore, this technology has not been used in environments affected by relatively high radiation levels. Therefore, in nuclear power plants, the use of RF tags is limited in areas of low radiation levels. In our study, we develop and manufacture a new RF tag with a radiation shield cover that provides error correction functionality. It is expected that radiation shielded RF tags will improve the radiation-proof feature, and its application range will be expanded. Using the radiation-proof RF tag, we have conducted radiation durability tests. These tests are of two types: one using low energy gamma ray, and the other using high-energy gamma ray. Experimental results are then analyzed. The number of applications for radiation shielded RF tags is considerably increasing, because it can be used in various radiation environments other than nuclear power plants as well, such as

  17. Important requirements for RF generators for Accelerator-Driven Transmutation Technologies (ADTT)

    International Nuclear Information System (INIS)

    Lynch, M.T.; Tallerico, P.J.; Lawrence, G.P.

    1994-01-01

    All Accelerator-Driven Transmutation applications require very large amounts of RF Power. For example, one version of a Plutonium burning system requires an 800-MeV, 80-mA, proton accelerator running at 100% duty factor. This accelerator requires approximately 110-MW of continuous RF power if one assumes only 10% reserve power for control of the accelerator fields. In fact, to minimize beam spill, the RF controls may need as much as 15 to 20% of reserve power. In addition, unlike an electron accelerator in which the beam is relativistic, a failed RF station can disturb the synchronism of the beam, possibly shutting down the entire accelerator. These issues and more lead to a set of requirements for the RF generators which are stringent, and in some cases, conflicting. In this paper, we will describe the issues and requirements, and outline a plan for RF generator development to meet the needs of the Accelerator-Driven Transmutation Technologies. The key issues which will be discussed include: operating efficiency, operating linearity, effect on the input power grid, bandwidth, gain, reliability, operating voltage, and operating current

  18. ISR RF cavities

    CERN Multimedia

    1983-01-01

    In each ISR ring the radiofrequency cavities were installed in one 9 m long straight section. The RF system of the ISR had the main purpose to stack buckets of particles (most of the time protons)coming from the CPS and also to accelerate the stacked beam. The installed RF power per ring was 18 kW giving a peak accelerating voltage of 20 kV. The system had a very fine regulation feature allowing to lower the voltage down to 75 V in a smooth and well controlled fashion.

  19. JET ({sup 3}He)-D scenarios relying on RF heating: survey of selected recent experiments

    Energy Technology Data Exchange (ETDEWEB)

    Van Eester, D; Lerche, E; Andrew, Y; Biewer, T M; Casati, A; Crombe, K; De la Luna, E; Ericsson, G; Felton, R; Giacomelli, L; Giroud, C; Hawkes, N; Hellesen, C; Hjalmarsson, A; Joffrin, E; Kaellne, J; Kiptily, V; Lomas, P; Mantica, P; Marinoni, A [JET-EFDA Culham Science Centre, Abingdon, OX14 3DB (United Kingdom)] (and others)

    2009-04-15

    Recent JET experiments have been devoted to the study of ({sup 3}He)-D plasmas involving radio frequency (RF) heating. This paper starts by discussing the RF heating efficiency theoretically expected in such plasmas, covering both relevant aspects of wave and of particle dynamics. Then it gives a concise summary of the main conclusions drawn from recent experiments that were either focusing on studying RF heating physics aspects or that were adopting RF heating as a tool to study plasma behavior. Depending on the minority concentration chosen, different physical phenomena are observed. At very low concentration (X[{sup 3}He] < 1%), energetic tails are formed which trigger MHD activity and result in loss of fast particles. Alfven cascades were observed and gamma ray tomography indirectly shows the impact of sawtooth crashes on the fast particle orbits. Low concentration (X[{sup 3}He] < 10%) favors minority heating while for X[{sup 3}He] >> 10% electron mode conversion damping becomes dominant. Evidence for the Fuchs et al standing wave effect (Fuchs et al 1995 Phys. Plasmas 2 1637-47) on the absorption is presented. RF induced deuterium tails were observed in mode conversion experiments with large X[{sup 3}He] ({approx}18%). As tentative modeling shows, the formation of these tails can be explained as a consequence of wave power absorption by neutral beam particles that efficiently interact with the waves well away from the cold D cyclotron resonance position as a result of their substantial Doppler shift. As both ion and electron RF power deposition profiles in ({sup 3}He)-D plasmas are fairly narrow-giving rise to localized heat sources-the RF heating method is an ideal tool for performing transport studies. Various of the experiments discussed here were done in plasmas with internal transport barriers (ITBs). ITBs are identified as regions with locally reduced diffusivity, where poloidal spinning up of the plasma is observed. The present know-how on the role of

  20. RF pulse compression in the NLC test accelerator at SLAC

    International Nuclear Information System (INIS)

    Lavine, T.L.

    1995-01-01

    At the Stanford Linear Accelerator Center (SLAC), we are designing a Next Linear Collider (NLC) with linacs powered by X-band klystrons with rf pulse compression. The design of the linac rf system is based on X-band prototypes which have been tested at high power, and on a systems-integration test---the Next Linear Collider Test Accelerator (NLCTA)---which is currently under construction at SLAC. This paper discusses some of the systems implications of rf pulse compression, and the use of pulse compression in the NLCTA, both for peak power multiplication and for controlling, by rf phase modulation, intra-pulse variations in the linac beam energy. copyright 1995 American Institute of Physics

  1. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    International Nuclear Information System (INIS)

    Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

    2013-01-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  2. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    Science.gov (United States)

    Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

    2013-06-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  3. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

    2009-06-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  4. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    International Nuclear Information System (INIS)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

    2009-01-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  5. 1.5 MW RF Load for ITER

    International Nuclear Information System (INIS)

    Ives, Robert Lawrence; Marsden, David; Collins, George; Karimov, Rasul; Mizuhara, Max; Neilson, Jeffrey

    2016-01-01

    Calabazas Creek Research, Inc. developed a 1.5 MW RF load for the ITER fusion research facility currently under construction in France. This program leveraged technology developed in two previous SBIR programs that successfully developed high power RF loads for fusion research applications. This program specifically focused on modifications required by revised technical performance, materials, and assembly specification for ITER. This program implemented an innovative approach to actively distribute the RF power inside the load to avoid excessive heating or arcing associated with constructive interference. The new design implemented materials and assembly changes required to meet specifications. Critical components were built and successfully tested during the program.

  6. 1.5 MW RF Load for ITER

    Energy Technology Data Exchange (ETDEWEB)

    Ives, Robert Lawrence [Calabazas Creek Research, Inc., San Mateo, CA (United States); Marsden, David [Calabazas Creek Research, Inc., San Mateo, CA (United States); Collins, George [Calabazas Creek Research, Inc., San Mateo, CA (United States); Karimov, Rasul [Calabazas Creek Research, Inc., San Mateo, CA (United States); Mizuhara, Max [Calabazas Creek Research, Inc., San Mateo, CA (United States); Neilson, Jeffrey [Lexam Research, Redwood City, CA (United States)

    2016-09-01

    Calabazas Creek Research, Inc. developed a 1.5 MW RF load for the ITER fusion research facility currently under construction in France. This program leveraged technology developed in two previous SBIR programs that successfully developed high power RF loads for fusion research applications. This program specifically focused on modifications required by revised technical performance, materials, and assembly specification for ITER. This program implemented an innovative approach to actively distribute the RF power inside the load to avoid excessive heating or arcing associated with constructive interference. The new design implemented materials and assembly changes required to meet specifications. Critical components were built and successfully tested during the program.

  7. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. An RF-to-DC energy harvester for co-integration in a low-power 2.4 GHz transceiver frontend

    NARCIS (Netherlands)

    Masuch, J.; Delgado-Restituto, M.; Milosevic, D.; Baltus, P.G.M.

    2012-01-01

    A 2.4 GHz energy harvester for co-integration into a low-power transceiver (TRx) operating at the same frequency is presented. An RF switch decouples the harvester from the TRx and keeps the performance degradation of the TRx low, i.e. 0.2 dB reduced output power in Tx-mode and 0.4 dB reduced

  9. Operational experience with -20 kV, 5 A DC power supply in Indus-2 RF system

    International Nuclear Information System (INIS)

    Tyagi, R.K.; Tripathi, A.; Upadhyay, R.; Badapanda, M.K.; Lad, M.

    2015-01-01

    An AC regulator based -20 kV, 5 A DC power supply is employed to bias 60 kW, 505.8 MHz klystron amplifier in Indus-2 RF system. A three terminal triggered spark gap based crowbar along with suitable limiting elements is incorporated at the output of the power supply for protection of sensitive klystron amplifier during load arcing conditions. Wire burn test is carried out on this power supply along with crowbar to ensure that the stored energy dumped into klystron during its arcing is less than 20 Joule. Various protection circuits like over voltage, over current, under voltage, phase failure, thermal overload and transformer oil over temperature protection have been incorporated in this power supply. Preventive maintenance of the power supply is carried out at regular intervals to ensure that it operates satisfactorily during actual operation.This includes checking the breakdown strength of transformer oil, drying of Silica gels in transformer breathers, checking of all electrical connections and cleaning of all high voltage components. The calibration of various meters, checking the setting of various protection-interlock cards and checking the healthiness of crowbar system are also done at regular intervals. During operation, crucial performance parameters of this power supply along with various interlock signals are continuously monitored. Suitable arrangement has been made to operate this supply either in local mode as well as in remote mode. This power supply is operating satisfactorily with klystron amplifier in Indus-2 RF system in round the clock mode for last 15 years and its operational experience are presented in this paper. (author)

  10. Racetrack microtron rf system

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Keffeler, D.R.

    1985-01-01

    The rf system for the National Bureau of Standards (NBS)/Los Alamos cw racetrack microtron is described. The low-power portion consists of five 75-W amplifers that drive two input ports in each of two chopper deflection cavities and one port in the prebuncher cavity. A single 500-kW klystron drives four separate 2380-MHz cavity sections: the two main accelerator sections, a capture section, and a preaccelerator section. The phases and amplitudes in all cavities are controlled by electronic or electromechanical controls. The 1-MW klystron power supply and crowbar system were purchased as a unit; several modifications are described that improve power-supply performance. The entire rf system has been tested and shipped to the NBS, and the chopper-buncher system has been operated with beam at the NBS. 5 refs., 2 figs

  11. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  12. An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Yu-Chun Liu

    2015-08-01

    Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

  13. Physical Layer Security Enhancement in Multiuser Mixed RF#x002F;FSO Relay Networks under RF Interference

    KAUST Repository

    El-Malek, Ahmed H. Abd; Salhab, Anas M.; Zummo, Salam A.; Alouini, Mohamed-Slim

    2017-01-01

    In this paper, the impact of radio frequency (RF) co-channel interference (CCI) on the performance of multiuser (MU) mixed RF#x002F;free space optical (FSO) relay network with opportunistic user scheduling is studied. In the considered system, a user is opportunistically selected to communicate with a single destination through an amplify-and- forward (AF) relay in the presence of a single passive eavesdropper. The RF#x002F;FSO channel models are assumed to follow Rayleigh#x002F;Gamma-Gamma fading models, respectively with pointing errors and identical RF CCI signals. Exact closed-form expression for the system outage probability is derived. Then, an asymptotic expression for the outage probability is obtained at the high signal- to-interference-plus-noise ratio (SINR) regime. The asymptotic results are used to formulate a power allocation problem to obtain optimal RF transmission power. Then, the secrecy performance is studied in the presence of CCI at both the authorized relay and eavesdropper by obtaining exact and asymptotic closed-form expressions for the intercept probability. The derived analytical formulas herein are supported by numerical and simulation results to clarify the main contributions of the work.

  14. Physical Layer Security Enhancement in Multiuser Mixed RF#x002F;FSO Relay Networks under RF Interference

    KAUST Repository

    El-Malek, Ahmed H. Abd

    2017-05-12

    In this paper, the impact of radio frequency (RF) co-channel interference (CCI) on the performance of multiuser (MU) mixed RF#x002F;free space optical (FSO) relay network with opportunistic user scheduling is studied. In the considered system, a user is opportunistically selected to communicate with a single destination through an amplify-and- forward (AF) relay in the presence of a single passive eavesdropper. The RF#x002F;FSO channel models are assumed to follow Rayleigh#x002F;Gamma-Gamma fading models, respectively with pointing errors and identical RF CCI signals. Exact closed-form expression for the system outage probability is derived. Then, an asymptotic expression for the outage probability is obtained at the high signal- to-interference-plus-noise ratio (SINR) regime. The asymptotic results are used to formulate a power allocation problem to obtain optimal RF transmission power. Then, the secrecy performance is studied in the presence of CCI at both the authorized relay and eavesdropper by obtaining exact and asymptotic closed-form expressions for the intercept probability. The derived analytical formulas herein are supported by numerical and simulation results to clarify the main contributions of the work.

  15. Resonant power absorption in helicon plasma sources

    International Nuclear Information System (INIS)

    Chen Guangye; Arefiev, Alexey V.; Bengtson, Roger D.; Breizman, Boris N.; Lee, Charles A.; Raja, Laxminarayan L.

    2006-01-01

    Helicon discharges produce plasmas with a density gradient across the confining magnetic field. Such plasmas can create a radial potential well for nonaxisymmetric whistlers, allowing radially localized helicon (RLH) waves. This work presents new evidence that RLH waves play a significant role in helicon plasma sources. An experimentally measured plasma density profile in an argon helicon discharge is used to calculate the rf field structure. The calculations are performed using a two-dimensional field solver under the assumption that the density profile is axisymmetric. It is found that RLH waves with an azimuthal wave number m=1 form a standing wave structure in the axial direction and that the frequency of the RLH eigenmode is close to the driving frequency of the rf antenna. The calculated resonant power absorption, associated with the RLH eigenmode, accounts for most of the rf power deposited into the plasma in the experiment

  16. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  17. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  18. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

    International Nuclear Information System (INIS)

    Liu, J.L.; Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.

    2013-01-01

    Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm 2 /V s and the carrier density of 1.096 × 10 13 cm −2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (f T ) of 5 GHz and the maximum oscillation frequency (f max ) of 6 GHz at V GS = −0.5 V and V DS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.

  19. n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

    Science.gov (United States)

    Zhang, Zhiqiang; Liao, Xiaoping

    2017-06-17

    To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

  20. Effect of RF Parameters on Breakdown Limits in High-Vacuum X-Band Structures

    International Nuclear Information System (INIS)

    Dolgashev, Valery A.

    2003-01-01

    RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi-megawatt operation of X-band rf structures at pulse width on the order of one microsecond. These structures are used in rf systems of high gradient accelerators. Recent experiments at Stanford Linear Accelerator Center (SLAC) have explored the functional dependence of breakdown limit on input power and pulse width. The experimental data covered accelerating structures and waveguides. Another breakdown limit of accelerating structures was associated with high magnetic fields found in waveguide-to-structure couplers. To understand and quantify these limits we simulated 3D structures with the electrodynamics code Ansoft HFSS and the Particle-In-Cell code MAGIC3D. Results of these simulations together with experimental data will be discussed in this paper

  1. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  2. Status of 174 MHz RF system for BEP

    International Nuclear Information System (INIS)

    Biryuchevsky, Yu.A.; Gorniker, E.I.; Kendjebulatov, E.K.; Krutikhin, S.A.; Kurkin, G.Ya.; Petrov, V.M.; Pilan, A.M.

    2012-01-01

    The new RF system for the BEP storage ring (which is an injector of VEPP-2000 accelerating complex) will increase the particles energy in the BEP from 0.9 to 1 GeV. RF system operates at a frequency of 174 MHz and consists of an accelerating cavity, RF power generator and control system.

  3. rf beam-current, -phase, and -position monitors

    International Nuclear Information System (INIS)

    Young, L.

    1984-01-01

    A prototype rf beam monitor has been tested on the Racetrack Microtron's (RTM) 100 kV injector beam line at the National Bureau of Standards (NBS). This beam monitor is capable of measuring the current, the relative phase, and the position of the beam. The beam is bunched at 2380 MHz for acceleration by the linac in the injector beam line. This train of beam bunches passing through the beam monitor cavities excites the cavities at this resonance frequency of 2380 MHz. Probes in the cavities couple some of the beam-excited rf power out of the cavities. This rf power can be amplified if necessary and then analyzed by a double balanced mixer (DBM). The DBM can also be used as a phase detector. The effective shunt impedance of the cavities was measured with the CW beam. For the position monitor cavity, the shunt impedance is proportional to the displacement from the axis. The measured response of the prototype rf beam current monitor setup is a linear function of beam current. Response of the rf beam-position monitor is also shown

  4. Correction of the calculation of beam loading based in the RF power diffusion equation

    International Nuclear Information System (INIS)

    Silva, R. da.

    1980-01-01

    It is described an empirical correction based upon experimental datas of others authors in ORELA, GELINA and SLAC accelerators, to the calculation of the energy loss due to the beam loading effect as stated by the RF power diffusion equation theory an accelerating structure. It is obtained a dependence of this correction with the electron pulse full width half maximum, but independent of the electron energy. (author) [pt

  5. Low power rf system for the ALS Linac

    International Nuclear Information System (INIS)

    Lo, C.C.; Taylor, B.; Lancaster, H.

    1991-05-01

    The Linear Accelerator (Linac) in the Advanced Light Source (ALS) is designed to provide either single or multiple bunchers of 50 MeV electrons for the booster synchrotron. Three cavities are used in the Linac for electron bunching. The two subharmonic bunching cavities operate at 124.914 MHz and 499.654 MHz respectively. The S Band buncher operates at 2.997924 GHz. The low level RF system includes a master signal source, RF burst generators, signal phase control, timing trigger generators and a water temperature control system. The design and performance of the system will be described. 7 refs., 3 figs

  6. RF and microwave microelectronics packaging II

    CERN Document Server

    Sturdivant, Rick

    2017-01-01

    Reviews RF, microwave, and microelectronics assembly process, quality control, and failure analysis Bridges the gap between low cost commercial and hi-res RF/Microwave packaging technologies Engages in an in-depth discussion of challenges in packaging and assembly of advanced high-power amplifiers This book presents the latest developments in packaging for high-frequency electronics. It is a companion volume to “RF and Microwave Microelectronics Packaging” (2010) and covers the latest developments in thermal management, electrical/RF/thermal-mechanical designs and simulations, packaging and processing methods, and other RF and microwave packaging topics. Chapters provide detailed coverage of phased arrays, T/R modules, 3D transitions, high thermal conductivity materials, carbon nanotubes and graphene advanced materials, and chip size packaging for RF MEMS. It appeals to practicing engineers in the electronic packaging and high-frequency electronics domain, and to academic researchers interested in underst...

  7. A design and performance analysis tool for superconducting RF systems

    International Nuclear Information System (INIS)

    Schilcher, T.; Simrock, S.N.; Merminga, L.; Wang, D.X.

    1997-01-01

    Superconducting rf systems are usually operated with continuous rf power or with rf pulse lengths exceeding 1 ms to maximize the overall wall plug power efficiency. Typical examples are CEBAF at the Thomas Jefferson National Accelerator Facility (Jefferson Lab) and the TESLA Test Facility at DESY. The long pulses allow for effective application of feedback to stabilize the accelerating field in presence of microphonics, Lorentz force detuning, and fluctuations of the beam current. In this paper the authors describe a set of tools to be used with MATLAB and SIMULINK, which allow to analyze the quality of field regulation for a given design. The tools include models for the cavities, the rf power source, the beam, sources of field perturbations, and the rf feedback system. The rf control relevant electrical and mechanical characteristics of the cavity are described in form of time-varying state space models. The power source is modeled as a current generator and includes saturation characteristics and noise.An arbitrary time structure can be imposed on the beam current to reflect a macro-pulse structure and bunch charge fluctuations. For rf feedback several schemes can be selected: Traditional amplitude and phase control as well as I/Q control. The choices for the feedback controller include analog or digital approaches and various choices of frequency response. Feed forward can be added to further suppress repetitive errors. The results of a performance analysis of the CEBAF and the TESLA Linac rf system using these tools are presented

  8. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  9. A 700 MHZ, 1 MW CW RF System for a FEL 100mA RF Photoinjector

    CERN Document Server

    Roybal, William; Reass, William; Rees, Daniel; Tallerico, Paul J; Torrez, Phillip A

    2005-01-01

    This paper describes a 700 MHz, 1 Megawatt CW, high efficiency klystron RF system utilized for a Free Electron Laser (FEL) high-brightness electron photoinjector (PI). The E2V klystron is mod-anode tube that operates with a beam voltage of 95 kV. This tube, operating with a 65% efficiency, requires ~96 watts of input power to produce in excess of 1 MW of output power. This output drives the 3rd cell of a 2½-cell, p-mode PI cavity through a pair of planar waveguide windows. Coupling is via a ridge-loaded tapered waveguide section and "dog-bone" iris. This paper will present the design of the RF, RF transport, coupling, and monitoring/protection systems that are required to support CW operations of the 100 mA cesiated, semi-porous SiC photoinjector.

  10. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    International Nuclear Information System (INIS)

    Naddaf, M; Saloum, S; Hamadeh, H

    2007-01-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups

  11. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    Science.gov (United States)

    Naddaf, M.; Saloum, S.; Hamadeh, H.

    2007-07-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 °C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

  12. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M; Saloum, S; Hamadeh, H [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091, Damascus (Syrian Arab Republic)

    2007-07-07

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

  13. Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.; Hamadeh, H.

    2008-01-01

    Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups. (Authors)

  14. Development of low emittance high brightness electron beams and rf accelerating structures

    International Nuclear Information System (INIS)

    Pellegrini, C.

    1991-01-01

    The main goals of this project were the construction of an S-band RF photoinjector for the production of a high brightness electron beam, and the development of a new type of RF accelerator structure; the Plane wave transformer. By the end of October 1991 the photoinjector had been built, its RF characteristics had been measured at low power, and an initial test of the gun at high RF power had been done. The Plane Wave Transformer had also been built and tested at lower power. In both cases the results obtained are mostly in agreement with the expected and calculated behavior

  15. Performance Analysis of RF-FSO Multi-Hop Networks

    KAUST Repository

    Makki, Behrooz

    2017-05-12

    We study the performance of multi-hop networks composed of millimeter wave (MMW)-based radio frequency (RF) and free-space optical (FSO) links. The results are obtained in the cases with and without hybrid automatic repeat request (HARQ). Taking the MMW characteristics of the RF links into account, we derive closed-form expressions for the network outage probability. We also evaluate the effect of various parameters such as power amplifiers efficiency, number of antennas as well as different coherence times of the RF and the FSO links on the system performance. Finally, we present mappings between the performance of RF- FSO multi-hop networks and the ones using only the RF- or the FSO-based communication, in the sense that with appropriate parameter settings the same outage probability is achieved in these setups. The results show the efficiency of the RF-FSO setups in different conditions. Moreover, the HARQ can effectively improve the outage probability/energy efficiency, and compensate the effect of hardware impairments in RF-FSO networks. For common parameter settings of the RF-FSO dual- hop networks, outage probability 10^{-4} and code rate 3 nats-per-channel-use, the implementation of HARQ with a maximum of 2 and 3 retransmissions reduces the required power, compared to the cases with no HARQ, by 13 and 17 dB, respectively.

  16. Measurements of RF-induced sol modifications in Tore Supra tokamak

    International Nuclear Information System (INIS)

    Kubic, Martin; Gunn, James P.; Colas, Laurent; Heuraux, Stephane; Faudot, Eric

    2012-01-01

    Since spring 2011, one of the three ion cyclotron resonance heating (ICRH) antennas in the Tore Supra (TS) tokamak is equipped with a new type of Faraday screen (FS). Results from Radio Frequency (RF) simulations of the new Faraday screen suggest the innovative structure with cantilevered bars and 'shark tooth' openings significantly changes the current flow pattern on the front of the antenna which in turn reduces the RF potential and RF electrical field in particular parallel to the magnetic field lines which contributes to generating RF sheaths. Effects of the new FS operation on RF-induced scrape-off layer (SOL) modifications are studied for different plasma and antenna configurations - scans of strap power ratio imbalance, phasing, injected power and SOL density. (authors)

  17. The Legal Investigation Peculiarities in RF Constitutional Court

    Directory of Open Access Journals (Sweden)

    Natal'ya V. Lebedeva

    2012-11-01

    Full Text Available The article features the legal proceedings between Federal Bodies, Entities of Russian Federation, and supreme bodies of RF entities which are both of theoretical and practical interests to powers of RF Constitutional Court.

  18. Modulator considerations for the SNS RF system

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Reass, W.A.

    1998-01-01

    The Spallation Neutron Source (SNS) is an intense neutron source for neutron scattering experiments. The project is in the research stage, with construction funding beginning next year. The SNS is comprised of an ion source, a 1,000 MeV, H - linear accelerator, an accumulator ring, a neutron producing target, and experimental area to utilize the scattering of the neutrons. The linear accelerator is RF driven, and the peak beam current is 27 mA and the beam duty factor is 5.84%. The peak RF power required is 104 MW, and the H - beam pulse length is 0.97 ms at a 60 Hz repetition rate. The RF pulses must be about 0.1 ms longer than the beam pulses, due to the Q of the accelerating cavities, and the time required to establish control of the cavity fields. The modulators for the klystrons in this accelerator are discussed in this paper. The SNS is designed to be expandable, so the beam power can be doubled or even quadrupled in the future. One of the double-power options is to double the beam pulse length and duty factor. The authors are specifying the klystrons to operate in this twice-duty-factor mode, and the modulator also should be expandable to 2 ms pulses at 60 Hz. Due to the long pulse length and low RF frequency of 805 MHz, the klystron power is specified at 2.5 MW peak, and the RF system will have 56 klystrons at 805 MHz, and three 1.25 MW peak power klystrons at 402.5 MHz for the low energy portion of the accelerator. The low frequency modulators are conventional floating-deck modulation anode control systems

  19. Joint Optimization of Power Allocation and Load Balancing for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad; Salhab, Anas; Zummo, Salam A.; Alouini, Mohamed-Slim

    2018-01-01

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF access point (AP) and multiple VLC APs. An iterative algorithm is proposed to distribute users on APs and distribute the powers of the APs on their users. In the PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for total achievable data rate maximization. In this subproblem, we propose a new efficient algorithm that finds optimal dual variables after formulating them in terms of each other. This new algorithm provides faster convergence and better performance than the traditional subgradient method. In addition, it does not depend on the step size or the initial values of the variables, which we look for, as the subgradient does. Then, we start with the user of the minimum data rate seeking another AP that offers a higher data rate for that user. Users with lower data rates continue reconnecting from one AP to another to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. Two approaches are proposed to have the joint PA and LB performed: a main approach that considers the exact interference information for all users, and a suboptimal approach that aims to decrease the complexity of the first approach by considering only the approximate interference information of users. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  20. Joint Optimization of Power Allocation and Load Balancing for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad

    2018-04-18

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF access point (AP) and multiple VLC APs. An iterative algorithm is proposed to distribute users on APs and distribute the powers of the APs on their users. In the PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for total achievable data rate maximization. In this subproblem, we propose a new efficient algorithm that finds optimal dual variables after formulating them in terms of each other. This new algorithm provides faster convergence and better performance than the traditional subgradient method. In addition, it does not depend on the step size or the initial values of the variables, which we look for, as the subgradient does. Then, we start with the user of the minimum data rate seeking another AP that offers a higher data rate for that user. Users with lower data rates continue reconnecting from one AP to another to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. Two approaches are proposed to have the joint PA and LB performed: a main approach that considers the exact interference information for all users, and a suboptimal approach that aims to decrease the complexity of the first approach by considering only the approximate interference information of users. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  1. Lasertron, a pulsed RF-source using laser triggered photocathode

    International Nuclear Information System (INIS)

    Yoshioka, Masakazu.

    1988-12-01

    A new pulsed RF-source, 'Lasertron', are being developed as a possible RF-power source for future electron-positron linear colliders. In a series of systematic study, a prototype lasertron has been fabricated and tested. A peak power of 80 kW is attained at 2.856 GHz RF-frequency in 1-μs time duration. This paper describes the experimental results of the lasertron including the developments of the photocathode and the laser system. Test results are compared with the analysis of beam dynamics in the lasertron. (author)

  2. RF magnetron sputtered La3+-modified PZT thin films: Perovskite phase stabilization and properties

    International Nuclear Information System (INIS)

    Singh, Ravindra; Goel, T.C.; Chandra, Sudhir

    2008-01-01

    In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films in pure perovskite phase by RF magnetron sputtering. Various deposition parameters such as target-to-substrate spacing, sputtering gas composition, deposition temperature, post-deposition annealing temperature and time have been optimized to obtain PLZT films in pure perovskite phase. The films prepared in pure argon at 100 W RF power without external substrate heating exhibit pure perovskite phase after rapid thermal annealing (RTA) at 700 deg. C for 5 min. The film prepared at 225 deg. C substrate temperature also exhibits pure perovskite phase after RTA at 700 deg. C for 2 min. SIMS depth profile performed on one of the pure perovskite films (RTA at 700 deg. C for 5 min) shows very good stoichiometric uniformity of all elements of PLZT. The surface morphology of the films was examined using SEM and AFM. The dielectric, ferroelectric and electrical properties of the pure perovskite films were also investigated in detail. The remanent polarization for the films annealed at 700 deg. C for 5 and 2 min were found to be 15 and 13.5 μC cm -2 , respectively. Both the films have high DC resistivity of the order of 10 11 Ω cm at the electric field of ∼80 kV cm -1

  3. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  4. Influence of the deposition geometry on the microstructure of sputter-deposited V-Al-C-N coatings

    Energy Technology Data Exchange (ETDEWEB)

    Darma, Susan; Krause, Baerbel; Doyle, Stephen; Mangold, Stefan; Baumbach, Tilo [ISS, Karlsruher Institut fuer Technologie (Germany); Ulrich, Sven; Stueber, Michael [IAM-AWP, Karlsruher Institut fuer Technologie (Germany)

    2012-07-01

    Multi-element hard coating materials such as V-Al-C-N are of great interest for many technological applications. Their mechanical properties depend on the composition and microstructure of the coating. In order to determine the optimum composition and deposition conditions of these complex materials, many samples are required. One powerful tool for reducing the number of experiments is based on the so-called combinatorial approach for thin film deposition: many different thin film samples can be realized simultaneously, exploiting the deposition gradient resulting from codeposition of several materials. We will present an X-ray diffraction study of the influence of the deposition geometry on the microstructure of V-Al-C-N coatings. The films were deposited by reactive RF magnetron sputtering from a segmented target composed of AlN and VC. Synchrotron radiation measurements where performed at the beamline PDIFF at ANKA. Significant texture changes were observed which can be attributed to the deposition geometry, as verified by calculations of the flux distribution. We conclude that codeposition can accelerate significantly the screening of new materials, under the condition that the desired property is not significantly influenced by the microstructural changes due to the deposition geometry.

  5. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  6. Morphology and life-time investigations of dry-lubricating MoS2 films deposited by RF-sputtering

    International Nuclear Information System (INIS)

    Menoud, C.; Kocher, H.; Hinterman, H.E.

    1985-01-01

    Morphology and life-time investigations in vacuum, dry and humid air, of thin, dry-lubricating MoS 2 -films, deposited by rf-sputtering, are reported, using scanning electron microscopical analysis (SEM) and pin on disc friction measurements. Beyond a certain relative humidity the life-time decreases rapidly by about two orders of magnitude, and the coefficient of friction increases from 0.02 to 0.04 in vacuum to 0.20 to 0.30 in humid air. Considering these changes, the useful life-time of a coating was defined as the number of revolutions at a given radius till the coefficient of friction reaches a value of 0.4. Life-time studies were also conducted with Rhodium interlayers and other substrate and pin materials. With the above life-time criterion and the selected pin-on-disc test conditions, the life-time does not show any significant change within an MoS 2 thickness range of 0.2 to 1.5 μm. Finally the life-time distribution of 160 depositions as well as some preliminary results on torque measurements with MoS 2 coated precision roller bearings are presented. (author)

  7. Surface morphology, structural and electrical properties of RF ...

    Indian Academy of Sciences (India)

    5

    electrical properties of RF sputtered ITO thin films deposited onto Si(100). .... scanning electron microscopy (SEM) surface images are shown along with the cross- ..... annealing effect”, J. of Alloys and Compounds 509, (2011) 6072-6076.

  8. RF system considerations for large high-duty-factor linacs

    International Nuclear Information System (INIS)

    Lynch, M.T.; Ziomek, C.D.; Tallerico, P.J.; Regan, A.H.; Eaton, L.; Lawrence, G.

    1994-01-01

    RF systems are often a major cost item for linacs, but this is especially true for large high-duty-factor linacs (up to and including CW) such as the Accelerator for Production of Tritium (APT) or the Accelerator for Transmutation of nuclear Waste (ATW). In addition, the high energy and high average beam current of these machines (approximately 1 GeV, 100--200 mA) leads to a need for excellent control of the accelerating fields in order to minimize the possibility of beam loss in the accelerator and the resulting activation. This paper will address the key considerations and limitations in the design of the RF system. These considerations impact the design of both the high power RF components and the RF controls. As might be expected, the two concerns sometimes lead to conflicting design requirements. For example minimum RF operating costs lead to a desire for operation near saturation of the high power RF generators in order to maximize the operating efficiency. Optimal control of the RF fields leads to a desire for maximum overdrive capability in those same generators in order to respond quickly to disturbances of the accelerator fields

  9. RF-Trapped Chip Scale Helium Ion Pump (RFT-CHIP)

    Science.gov (United States)

    2016-04-06

    utilizes two operation states: an ion extraction state and an RF electron trapping state. A high power RF switch S1 (RF- LAMBDA RFSP2TRDC06G, DC-6 GHz...integrated in time. The electric potential is obtained by solution of Poisson’s equation using an incomplete LU BiConjugate Gradient sparse matrix

  10. Plasma edge cooling during RF heating

    International Nuclear Information System (INIS)

    Suckewer, S.; Hawryluk, R.J.

    1978-01-01

    A new approach to prevent the influx of high-Z impurities into the core of a tokamak discharge by using RF power to modify the edge plasma temperature profile is presented. This concept is based on spectroscopic measurements on PLT during ohmic heating and ATC during RF heating. A one dimensional impurity transport model is used to interpret the ATC results

  11. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  12. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  13. Tilt optimized flip uniformity (TOFU) RF pulse for uniform image contrast at low specific absorption rate levels in combination with a surface breast coil at 7 Tesla.

    Science.gov (United States)

    van Kalleveen, Irene M L; Boer, Vincent O; Luijten, Peter R; Klomp, Dennis W J

    2015-08-01

    Going to ultrahigh field MRI (e.g., 7 Tesla [T]), the nonuniformity of the B1+ field and the increased radiofrequency (RF) power deposition become challenging. While surface coils improve the power efficiency in B1+, its field remains nonuniform. In this work, an RF pulse was designed that uses the slab selection to compensate the inhomogeneous B1+ field of a surface coil without a substantial increase in specific absorption rate (SAR). A breast surface coil was used with a decaying B1+ field in the anterior-posterior direction of the human breast. Slab selective RF pulses were designed and compared with adiabatic and spokes RF pulses. Proof of principle was demonstrated with FFE and B1+ maps of the human breast. In vivo measurements obtained with the breast surface coil show that the tilt optimized flip uniformity (TOFU) RF pulses can improve the flip angle homogeneity by 31%, while the SAR will be lower compared with BIR-4 and spokes RF pulses. By applying TOFU RF pulses to the breast surface coil, we are able to compensate the inhomogeneous B1+ field, while keeping the SAR low. Therefore stronger T1 -weighting in FFE sequences can be obtained, while pulse durations can remain short, as shown in the human breast at 7T. © 2014 Wiley Periodicals, Inc.

  14. The FELIX RF system

    International Nuclear Information System (INIS)

    Manintveld, P.; Delmee, P.F.M.; Geer, C.A.J. van der; Meddens, B.J.H.; Meer, A.F.G. van der; Amersfoort, P.W. van

    1992-01-01

    The performance of the RF system for the Free Electron Laser for Infrared eXperiments (FELIX) is discussed. The RF system provides the input power for a triode gun (1 GHz, 100 W), a prebuncher (1 GHz, 10 kW), a buncher (3 GHz, 20 MW), and two linacs (3 GHz, 8 MW each). The pulse length in the system is 20 μs. The required electron beam stability imposes the following demands on the RF system: a phase stability better than 0.3 deg for the 1 GHz signals and better than 1 deg for the 3 GHz signals; the amplitude stability has to be better than 1% for the 1 GHz and better than 0.2% for the 3 GHz signals. (author) 3 refs.; 6 figs

  15. Discharge cleaning of carbon deposits

    International Nuclear Information System (INIS)

    Mozetic, M.; Vesel, A.; Drenik, A.

    2006-01-01

    Experimental results of discharge cleaning of carbon deposits are presented. Deposits were prepared by creating plasma in pure methane. The methane was cracked in RF discharge at the output power of 250 W. The resultant radicals were bonded to the wall of discharge vessel forming a thin film of hydrogenated black carbon with the thickness of about 200nm. The film was then cleaned in situ by oxygen plasma with the density of about 1x10 16 m -3 , electron temperature of 5 eV, neutral gas kinetic temperature of about 100 0 C and neutral atom density of 6x10 21 m -3 . The treatment time was 30 minutes. The efficiency of plasma cleaning was monitored by optical emission spectroscopy. As long as the wall was contaminated with carbon deposit, substantial emission of the CO molecules was detected. As the cleaning was in progress, the CO emission was decreasing and vanished after 30 minutes when the discharge vessel became free of any carbon. The results are explained by interaction of plasma radicals with carbon deposits. (author)

  16. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Science.gov (United States)

    Surmeneva, Maria A.; Surmenev, Roman A.; Nikonova, Yulia A.; Selezneva, Irina I.; Ivanova, Anna A.; Putlyaev, Valery I.; Prymak, Oleg; Epple, Matthias

    2014-10-01

    A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  17. RF link for Implanted Medical Devices (IMDs) and Sub-GHz Inductive Power Transmission

    OpenAIRE

    Diet , Antoine; Koulouridis , Satvros; Le Bihan , Yann; Luu , Quang-Trung; Meyer , Olivier; Pichon , Lionel; Biancheri-Astier , Marc

    2017-01-01

    International audience; Ce travail s'inscrit dan sune etude exploratoire sur les possibilités de télé-alimentation RF des implants médicaux et/ou de communication entre eux. En effet, la durée de fonctionnement de certains implants avec batterie rend leur utilisation critique car il ne faut pas privilégier une intervention chirurgicale lourde s'il est possible d'agir de manière non-invasive. La transmission d'énergie sans fil ou WPT (Wireless Power Transfer) est au cœur de nombreuses autres t...

  18. Alternative RF coupling configurations for H− ion sources

    International Nuclear Information System (INIS)

    Briefi, S.; Fantz, U.; Gutmann, P.

    2015-01-01

    RF heated sources for negative hydrogen ions both for fusion and accelerators require very high RF powers in order to achieve the required H − current what poses high demands on the RF generators and the RF circuit. Therefore it is highly desirable to improve the RF efficiency of the sources. This could be achieved by applying different RF coupling concepts than the currently used inductive coupling via a helical antenna, namely Helicon coupling or coupling via a planar ICP antenna enhanced with ferrites. In order to investigate the feasibility of these concepts, two small laboratory experiments have been set up. The PlanICE experiment, where the enhanced inductive coupling is going to be investigated, is currently under assembly. At the CHARLIE experiment systematic measurements concerning Helicon coupling in hydrogen and deuterium are carried out. The investigations show that a prominent feature of Helicon discharges occurs: the so-called low-field peak. This is a local improvement of the coupling efficiency at a magnetic field strength of a few mT which results in an increased electron density and dissociation degree. The full Helicon mode has not been achieved yet due to the limited available RF power and magnetic field strength but it might be sufficient for the application of the coupling concept to ion sources to operate the discharge in the low-field-peak region

  19. Design and construction of a 500 KW CW, 400 MHz klystron to be used as RF power source for LHC/RF component tests

    CERN Document Server

    Frischholz, Hans; Pearson, C

    1998-01-01

    A 500 kW cw klystron operating at 400 MHz was developed and constructed jointly by CERN and SLAC for use as a high-power source at CERN for testing LHC/RF components such as circulators, RF absorbers and superconducting cavities with their input couplers. The design is a modification of the 353 MHz SLAC PEP-I klystron. More than 80% of the original PEP-I tube parts could thus be incorporated in the LHC test klystron which resulted in lower engineering costs as well as reduced development and construction time. The physical length between cathode plane and upper pole plate was kept unchanged so that a PEP-I tube focusing solenoid, available at CERN, could be re-used. With the aid of the klystron simulation codes JPNDISK and CONDOR, the design of the LHC tube was accomplished, which resulted in a tube with noticeably higher efficiency than its predecessor, the PEP-I klystron. The integrated cavities were redesigned using SUPERFISH and the output coupling circuit, which also required redesigning, was done with t...

  20. Klystron 'efficiency loop' for the ALS storage ring RF system

    International Nuclear Information System (INIS)

    Kwiatkowski, Slawomir; Julian, Jim; Baptiste, Kenneth

    2002-01-01

    The recent energy crisis in California has led us to investigate the high power RF systems at the Advanced Light Source (ALS) in order to decrease the energy consumption and power costs. We found the Storage Ring Klystron Power Amplifier system operating as designed but with significant power waste. A simple proportional-integrator (PI) analog loop, which controls the klystron collector beam current, as a function of the output RF power, has been designed and installed. The design considerations, besides efficiency improvement, were to interface to the existing system without major expense. They were to also avoid the klystron cathode power supply filter's resonance in the loop's dynamics, and prevent a conflict with the existing Cavity RF Amplitude Loop dynamics. This efficiency loop will allow us to save up to 700 MW-hours of electrical energy per year and increase the lifetime of the klystron

  1. Design, fabrication and low power RF testing of a prototype beta=1, 1050 MHz cavity developed for electron linac

    International Nuclear Information System (INIS)

    Sarkar, S.; Mondal, J.; Mittal, K.C.

    2013-01-01

    A single cell 1050 MHz β = 1 elliptical cavity has been designed for possible use in High energy electron accelerator. A prototype Aluminium cavity has been fabricated by die punch method and low power testing of the cavity has been carried out by using VNA. The fundamental mode frequency of the prototype cavity is found out to be 1051.38 MHz and Q (loaded) and Q0 values corresponding to 2 modes are 8439 and 10013 respectively. Cell to cell coupling coefficient is 1.82 % from measurement which matches with the designed value (1.84%). The higher order mode frequencies are also measured and electric field of the cavity is confirmed by bead pull method. Low power RF measurements on the prototype cavity indicate that the critical RF parameters (Qo, f, Kc etc) for the cavity are consistent with the designed value. (author)

  2. Multiband RF circuits and techniques for wireless transmitters

    CERN Document Server

    Chen, Wenhua; Ghannouchi, Fadhel M

    2016-01-01

    This book introduces systematic design methods for passive and active RF circuits and techniques, including state-of-the-art digital enhancement techniques. As the very first book dedicated to multiband RF circuits and techniques, this work provides an overview of the evolution of transmitter architecture and discusses current digital predistortion techniques. Readers will find a collection of novel research ideas and new architectures in concurrent multiband power dividers, power amplifiers and related digital enhancement techniques. This book will be of great interest to academic researchers, R&D engineers, wireless transmitter and protocol designers, as well as graduate students who wish to learn the core architectures, principles and methods of multiband RF circuits and techniques. .

  3. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  4. Structural and superconducting properties of sputter-deposited niobium films for applications in RF accelerating cavities

    CERN Document Server

    Peck, M A

    2000-01-01

    The present work presents the results of a systematic study of superconducting and structural properties of niobium films sputter deposited onto the inner walls of radiofrequency copper resonators. The measured superconducting quantities include the surface resistance, the critical temperature, the penetration depth and the upper and lower critical fields. In addition to films grown with different discharge gases (Xe, Kr, Ar, Ne and Ar-Ne mixtures) and to films grown on substrates prepared under different conditions, the study also includes massive niobium cavities. The surface resistance is analysed in terms of its dependence on the temperature and on the rf field amplitude and, when possible, compared to theoretical predictions. In general, good agreement with BCS theory is observed. All experimental results are presented in the form of a simple, but adequate parameterisation. The residual resistance is observed to be essentially uncorrelated with the other variables, but strongly dependent on the macroscop...

  5. Rf System for the NLCTA

    International Nuclear Information System (INIS)

    Wang, J.W.; Adolphsen, C.; Eichner, J.; Fuller, R.W.; Gold, S.L.; Hanna, S.M.; Hoag, H.A.; Holmes, S.G.; Koontz, R.F.; Lavine, Theodore L.; Loewen, R.J.; Miller, R.H.; Nantista, C.D.; Pope, R.; Rifkin, J.; Ruth, R.D.; Tantawi, S.G.; Vlieks, A.E.; Wilson, Z.; Yeremian, A.

    2011-01-01

    This paper describes an X-Band RF system for the Next Linear Collider Test Accelerator. The RF system consists of a 90 MeV injector and a 540 MeV linac. The main components of the injector are two low-Q single-cavity prebunchers and two 0.9-m-long detuned accelerator sections. The linac system consists of six 1.8-m-long detuned and damped detuned accelerator sections powered in pairs. The rf power generation, compression, delivery, distribution and measurement systems consist of klystrons, SLEDII energy compression systems, rectangular waveguides, magic-T's, and directional couplers. The phase and amplitude for each prebuncher is adjusted via a magic-T type phase shifter/attenuator. Correct phasing between the two 0.9 m accelerator sections is obtained by properly aligning the sections and adjusting two squeeze type phase shifters. Bunch phase and bunch length can be monitored with special microwave cavities and measurement systems. The design, fabrication, microwave measurement, calibration, and operation of the sub-systems and their components are briefly presented.

  6. Normal Conducting RF Cavity for MICE

    International Nuclear Information System (INIS)

    Li, D.; DeMello, A.; Virostek, S.; Zisman, M.; Summers, D.

    2010-01-01

    Normal conducting RF cavities must be used for the cooling section of the international Muon Ionization Cooling Experiment (MICE), currently under construction at Rutherford Appleton Laboratory (RAL) in the UK. Eight 201-MHz cavities are needed for the MICE cooling section; fabrication of the first five cavities is complete. We report the cavity fabrication status including cavity design, fabrication techniques and preliminary low power RF measurements.

  7. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  8. Reduction of field emission in superconducting cavities with high power pulsed RF

    International Nuclear Information System (INIS)

    Graber, J.; Crawford, C.; Kirchgessner, J.; Padamsee, H.; Rubin, D.; Schmueser, P.

    1994-01-01

    A systematic study is presented of the effects of pulsed high power RF processing (HPP) as a method of reducing field emission (FE) in superconducting radio frequency (SRF) cavities to reach higher accelerating gradients for future particle accelerators. The processing apparatus was built to provide up to 150 kW peak RF power to 3 GHz cavities, for pulse lengths from 200 μs to 1 ms. Single-cell and nine-cell cavities were tested extensively. The thermal conductivity of the niobium for these cavities was made as high as possible to ensure stability against thermal breakdown of superconductivity. HPP proves to be a highly successful method of reducing FE loading in nine-cell SRF cavities. Attainable continuous wave (CW) fields increase by as much as 80% from their pre-HPP limits. The CW accelerating field achieved with nine-cell cavities improved from 8-15 MV/m with HPP to 14-20 MV/m. The benefits are stable with subsequent exposure to dust-free air. More importantly, HPP also proves effective against new field emission subsequently introduced by cold and warm vacuum ''accidents'' which admitted ''dirty'' air into the cavities. Clear correlations are obtained linking FE reduction with the maximum surface electric field attained during processing. In single cells the maximums reached were E peak =72 MV/m and H peak =1660 Oe. Thermal breakdown, initiated by accompanying high surface magnetic fields is the dominant limitation on the attainable fields for pulsed processing, as well as for final CW and long pulse operation. To prove that the surface magnetic field rather than the surface electric fields is the limitation to HPP effectiveness, a special two-cell cavity with a reduced magnetic to electric field ratio is successfully tested. During HPP, pulsed fields reach E peak =113 MV/m (H peak =1600 Oe) and subsequent CW low power measurement reached E peak =100 MV/m, the highest CW field ever measured in a superconducting accelerator cavity. ((orig.))

  9. Developmental efforts of RF collinear load for 10 MeV, 6 kW travelling wave Linac

    International Nuclear Information System (INIS)

    Kumar, Pankaj; Kumar, Harish; Soni, R.K.; Dwivedi, Jishnu; Thakurta, A.C.; Wanmode, Y.D.; Pareek, Prashant; Senthil Kumar, S; Shinde, R.S.

    2015-01-01

    RRCAT is developing a 10 MeV, 6 kW Travelling Wave Electron Linac for radiation processing applications. The remnant RF power from the Linac structure is taken out by output RF coupler and absorbed by the waveguide load. RF collinear load is an improved technique for absorption of the remnant RF power. It replaces the output RF coupler, RF window and waveguide load leading to reduction in size of magnetic elements and less transverse beam instabilities. In addition, it uses the remnant RF power to increase the electron beam energy. The collinear load consists of a number of copper cavities coated with microwave absorbing material at inner surfaces and brazed to the Linac structure at the end. Development of the collinear load has been started at RRCAT and a prototype low power collinear load using Kanthal (FeCrAl alloy) coating has been developed. Further works are going on the development of high power collinear load using FeSiAl alloy. The paper describes the development of the Kanthal based prototype low power collinear load as well as the works for the development of FeSiAl alloy based high power collinear load. (author)

  10. Commissioning experience with the PEP-II low-level RF system

    International Nuclear Information System (INIS)

    Corredoura, P.; Allison, S.; Claus, R.; Ross, W.; Sapozhnikov, L.; Schwarz, H.D.; Tighe, R.; Yee, C.; Ziomek, C.

    1997-05-01

    The low-level RF system for PEP-II is a modular design housed in a VXI environment and supported by EPICS. All signal processing and control is done at baseband using in-phase and quadrature (IQ) techniques. Remotely configurable RF feedback loops are used to control coupled-bunch instabilities driven by the accelerating mode of the RF cavities. A programmable DSP based feedback loop is implemented to control phase variations across the klystron due to the required adjustment of the cathode voltage to limit cathode power dissipation. The DSP loop also adaptively cancels modulations caused by klystron power supply ripple at selected power line harmonics between 60 Hz and 10 kHz. The system contains a built-in baseband network analyzer which allows remote measurement of the RF feedback loop transfer functions and automated configuration of these loops. This paper presents observations and measured data from the system

  11. Dependence of beam emittance on plasma electrode temperature and rf-power, and filter-field tuning with center-gapped rod-filter magnets in J-PARC rf-driven H− ion source

    International Nuclear Information System (INIS)

    Ueno, A.; Koizumi, I.; Ohkoshi, K.; Ikegami, K.; Takagi, A.; Yamazaki, S.; Oguri, H.

    2014-01-01

    The prototype rf-driven H − ion-source with a nickel plated oxygen-free-copper (OFC) plasma chamber, which satisfies the Japan Proton Accelerator Research Complex (J-PARC) 2nd stage requirements of a H − ion beam current of 60 mA within normalized emittances of 1.5 π mm mrad both horizontally and vertically, a flat top beam duty factor of 1.25% (500 μs × 25 Hz) and a life-time of more than 50 days, was reported at the 3rd international symposium on negative ions, beams, and sources (NIBS2012). The experimental results of the J-PARC ion source with a plasma chamber made of stainless-steel, instead of nickel plated OFC used in the prototype source, are presented in this paper. By comparing these two sources, the following two important results were acquired. One was that the about 20% lower emittance was produced by the rather low plasma electrode (PE) temperature (T PE ) of about 120 °C compared with the typically used T PE of about 200 °C to maximize the beam current for the plasma with the abundant cesium (Cs). The other was that by using the rod-filter magnets with a gap at each center and tuning the gap-lengths, the filter-field was optimized and the rf-power necessary to produce the J-PARC required H − ion beam current was reduced typically 18%. The lower rf-power also decreases the emittances

  12. Beyond the Interconnections: Split Manufacturing in RF Designs

    Directory of Open Access Journals (Sweden)

    Yu Bi

    2015-08-01

    Full Text Available With the globalization of the integrated circuit (IC design flow of chip fabrication, intellectual property (IP piracy is becoming the main security threat. While most of the protection methods are dedicated for digital circuits, we are trying to protect radio-frequency (RF designs. For the first time, we applied the split manufacturing method in RF circuit protection. Three different implementation cases are introduced for security and design overhead tradeoffs, i.e., the removal of the top metal layer, the removal of the top two metal layers and the design obfuscation dedicated to RF circuits. We also developed a quantitative security evaluation method to measure the protection level of RF designs under split manufacturing. Finally, a simple Class AB power amplifier and a more sophisticated Class E power amplifier are used for the demonstration through which we prove that: (1 the removal of top metal layer or the top two metal layers can provide high-level protection for RF circuits with a lower request to domestic foundries; (2 the design obfuscation method provides the highest level of circuit protection, though at the cost of design overhead; and (3 split manufacturing may be more suitable for RF designs than for digital circuits, and it can effectively reduce IP piracy in untrusted off-shore foundries.

  13. RF sputtering deposited a-IGZO films for LCD alignment layer application

    International Nuclear Information System (INIS)

    Wu, G.M.; Liu, C.Y.; Sahoo, A.K.

    2015-01-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  14. RF sputtering deposited a-IGZO films for LCD alignment layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Liu, C.Y.; Sahoo, A.K.

    2015-11-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  15. A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver

    International Nuclear Information System (INIS)

    Shi Jian; Mo Taishan; Gan Yebing; Ma Chengyan; Ye Tianchun; Le Jianlian

    2012-01-01

    A high-efficiency low-noise power solution for a dual-channel GNSS RF receiver is presented. The power solution involves a DC—DC buck converter and a followed low-dropout regulator (LDO). The pulse-width-modulation (PWM) control method is adopted for better noise performance. An improved low-power high-frequency PWM control circuit is proposed, which halves the average quiescent current of the buck converter to 80 μA by periodically shutting down the OTA. The size of the output stage has also been optimized to achieve high efficiency under a light load condition. In addition, a novel soft-start circuit based on a current limiter has been implemented to avoid inrush current. Fabricated with commercial 180-nm CMOS technology, the DC—DC converter achieves a peak efficiency of 93.1% under a 2 MHz working frequency. The whole receiver consumes only 20.2 mA from a 3.3 V power supply and has a noise figure of 2.5 dB. (semiconductor integrated circuits)

  16. Practical use of the amplitude and phase modulation of a high-power RF pulse via feed-forward control

    International Nuclear Information System (INIS)

    Kawase, Keigo; Kato, Ryukou; Irizawa, Akinori; Isoyama, Goro; Kashiwagi, Shigeru

    2013-01-01

    A new feed-forward control system to precisely control the amplitude and phase of the pulsed RF power in an electron linear accelerator (linac) is developed to make the accelerating field constant. Fast variations and ripples in the amplitude and phase in the RF pulses are compensated by modulating the amplitude and phase in the low-level system with a variable attenuator and phase shifter. The system is innovated the overdrive technique, which is commonly used in analog circuits, to speed up the slow response of the phase shifter, while the control signals are digitally processed; thus, the method is a hybrid of analog and digital techniques. By using the new control system, we find that the peak-to-peak variations in the amplitude and phase are reduced from 11.6% to 0.4% and from 6.1 degrees to 0.3 degrees, respectively, in 7.6-μs-long RF pulses for the L-band electron linac at Osaka University. (author)

  17. Power deposition in superconducting magnets of the momentum cleaning insertion

    CERN Document Server

    CERN. Geneva; Baishev, I S; Jeanneret, J B; Kourotchkine, I A

    2002-01-01

    This note describes the calculation of power deposition in the superconducting magnets Q6, Q7 and MB8 downstream of the momentum collimators in IR3. To reduce a relatively high power deposition density of 1.8mW/cm^3 in the coils of Q6, we propose to install some fixed shielding collimators upstream of the warm dogleg dipoles D4.

  18. Electron-beam direct drive for rf accelerator cavities

    International Nuclear Information System (INIS)

    Nahemow, M.D.; Humphries, S. Jr.

    1987-01-01

    This paper describes a Program to Demonstrate Electron-Beam Direct Drive for Radio Frequency (RF) Linear Accelerators at the Westinghouse R and D Center. The experimental program was undertaken using an existing electron beam facility at the Westinghouse R and C Center to demonstrate the potential of the Direct Drive RF Cavities for High Power Beams concept discussed as part of a program to develop a viable alternate concept for driving RF linear accelerators

  19. Los Alamos free-electron laser (FEL) rf system

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Lynch, M.T.

    1985-01-01

    The FEL rf system was designed for 3.6-MW rf pulses from two klystrons to drive two linacs and one deflection cavity at 1300 MHz. Two 108.33-MHz subharmonic buncher cavities and one fundamental buncher were also built, each powered by a 5-kW amplifier. A single phase-coherent source drives the various amplifiers as well as the grid of the electron gun, which is pulsed at 21.67 MHz. The initial buncher system did not work as well as expected, and the first linac tank required more rf power than anticipated. The light output was extremely sensitive to amplitude and phase errors. More powerful klystrons were developed and installed, and a method was discovered for operating a single subharmonic buncher and allowing the first linac to complete the bunching process. This paper shows the actual configuration used to operate the laser and discusses future improvements

  20. Analytic analysis on asymmetrical micro arcing in high plasma potential RF plasma systems

    International Nuclear Information System (INIS)

    Yin, Y; McKenzie, D R; Bilek, M M M

    2006-01-01

    We report experimental and analytical results on asymmetrical micro arcing in a RF (radio frequency) plasma. Micro arcing, resulting from high plasma potential, in RF plasma was found to occur only on the grounded electrode for a variety of electrode and surface configurations. The analytic derivation was based on a simple RF time-dependent Child-Langmuir sheath model and electric current continuity. We found that the minimum potential difference in one RF period across the grounded electrode sheath depends on the area ratio of the grounded electrode to the powered electrode. As the area ratio increases, the minimum potential difference across a sheath increases for the grounded electrode but not for the RF powered electrode. We showed that discharge time in micro arcing is more than 100 RF periods; thus the presence of a continuous high electric field in one RF cycle results in micro arcing on the grounded electrode. However, the minimum potential difference in one RF period across the powered electrode sheath is always small so that it prevents micro arcing occurring even though the average sheath voltage can be large. This simple analytic model is consistent with particle-in-cell simulation results