WorldWideScience

Sample records for rf power deposition

  1. High power RF window deposition apparatus, method, and device

    Science.gov (United States)

    Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

    2017-07-04

    A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

  2. Simulation of spatially dependent excitation rates and power deposition in RF discharges for plasma processing

    International Nuclear Information System (INIS)

    Kushner, M.J.; Anderson, H.M.; Hargis, P.J.

    1985-01-01

    In low pressure, radio frequency (RF) discharges of the type used in plasma processing of semiconductor materials, the rate of electron impact excitation and energy transfer processes depends upon both the phase of the RF excitation and position in the discharge. Electron impact collisions create radicals that diffuse or drift to the surfaces of interest where they are adsorbed or otherwise react. To the extent that these radicals have a finite lifetime, their transport time from point of creation to surface of interest is an important parameter. The spatial dependence of the rate of the initial electron impact collisions is therefore also an important parameter. The power that sustains the discharge is coupled into the system by two mechanisms: a high energy e-beam component of the electron distribution resulting from electrons falling through or being accelerated by the sheaths, and by joule heating in the body of the plasma. In this paper, the authors discuss the spatial dependence of excitation rates and the method of power deposition iin RF discharges of the type used for plasma processing

  3. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  4. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  5. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  6. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-01-01

    In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

  7. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-05-01

    This paper covers RF power sources for accelerator applications. The approach has been with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. This paper is confined to electron-positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. 11 refs., 13 figs

  8. Plasma enhanced RF power deposition on ICRF antennas in Tore Supra

    International Nuclear Information System (INIS)

    Goulding, R.H.; Harris, J.H.; Carter, M.D.; Hoffman, D.J.; Hogan, J.T.; Ryan, P.M.; Beaumont, B.; Bremond, S.; Hutter, T.

    1997-01-01

    The dual-strap Tore Supra ICRF antennas have been very successful in coupling high power fluxes > 16 MW/m2 to the plasma. In many cases it has been found that the power is limited not by the voltages and currents that can be sustained on antenna components, but rather by localized increases in antenna surface temperatures which are correlated with increased impurity levels. Hot spots have been observed using an IR imaging system with peak temperatures as high as 1,100 C after 2 s, and as little as 1.5 MW power coupled from a single launcher. The maximum temperature observed is highly dependent on antenna phasing, and is lowest with dipole (π) phasing of the relative antenna currents. Both toroidal and poloidal asymmetries in hot spot distribution have been observed, and interestingly, the toroidal asymmetry has been found to vary when the phase is changed from +π/2 to -π/2. Significant differences in the temperature profiles have been seen on the two types of Faraday shield in use, which appears to be related to the fact that one type has a recessed center septum between straps while the other does not. In some cases, the peak temperature has been observed to increase as the antenna/plasma gap is increased, while the peak remains in the same location. This behavior suggests that voltages generated by currents flowing in the Faraday shield structure itself may play a role in generating potentials responsible for the hot spots, in addition to rf fields in the plasma. In this paper data on antenna surface heating and loading data as a function of plasma density, antenna/plasma gap, and phasing will be presented. Calculations from the RANT3D electromagnetic code together with bench measurements of electric fields near the antenna surface will also be shown

  9. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sin, N.D.M.; Rusop, M.

    2011-01-01

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  10. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  11. Device quality InO{sub x}:Sn and InO{sub x} thin films deposited at room temperature with different rf-power densities

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, A., E-mail: ana.de.amaral@ist.utl.pt [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Brogueira, P. [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Dept. de Fisica and ICEMS, Campo Grande, 1749-016 Lisboa (Portugal); Lavareda, G. [Dept. de Ciencia dos Materiais and CTS, FCT-UNL, 2829-516 Caparica (Portugal); Nunes de Carvalho, C. [Dept. de Ciencia dos Materiais, FCT-UNL and ICEMS, 2829-516 Caparica (Portugal)

    2012-12-30

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm{sup 2} and 58.6 mW/cm{sup 2} as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 Multiplication-Sign 10{sup -4} {Omega}{center_dot}cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm{sup 2} from a 5% Sn alloy or at 19.5 mW/cm{sup 2} from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: Black-Right-Pointing-Pointer InO{sub x}:Sn and InO{sub x} thin films were deposited at room temperature. Black-Right-Pointing-Pointer Transparency and electrical resistivity are relatively independent of Sn content. Black-Right-Pointing-Pointer Device quality material was obtained. Black-Right-Pointing-Pointer The surface morphology homogeneity of the films varies with tin content.

  12. Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

    International Nuclear Information System (INIS)

    Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

    2012-01-01

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

  13. RF Power Generation in LHC

    CERN Document Server

    Brunner, O C; Valuch, D

    2003-01-01

    The counter-rotating proton beams in the Large Hadron Collider (LHC) will be captured and then accelerated to their final energies of 2 x 7 TeV by two identical 400 MHz RF systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell super-conducting (SC) cavity. Four klystrons are powered by a 100 kV, 40A AC/DC power converter, previously used for the operation of the LEP klystrons. A five-gap thyratron crowbar protects the four klystrons in each of these units. The technical specification and measured performance of the various high-power elements are discussed. These include the 400MHz/300kW klystrons with emphasis on their group delay and the three-port circulators, which have to cope with peak reflected power levels up to twice the simultaneously applied incident power of 300 kW. In addition, a novel ferrite loaded waveguide absorber, used as termination for port No...

  14. Review of pulsed rf power generation

    International Nuclear Information System (INIS)

    Lavine, T.L.

    1992-04-01

    I am going to talk about pulsed high-power rf generation for normal-conducting electron and positron linacs suitable for applications to high-energy physics in the Next Linear Collider, or NLC. The talk will cover some basic rf system design issues, klystrons and other microwave power sources, rf pulse-compression devices, and test facilities for system-integration studies

  15. High power RF transmission line component development

    International Nuclear Information System (INIS)

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I.

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant ε=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  16. High power RF transmission line component development

    Energy Technology Data Exchange (ETDEWEB)

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant {epsilon}=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  17. High power RF oscillator with Marx generators

    International Nuclear Information System (INIS)

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  18. RF power generation for future linear colliders

    International Nuclear Information System (INIS)

    Fowkes, W.R.; Allen, M.A.; Callin, R.S.; Caryotakis, G.; Eppley, K.R.; Fant, K.S.; Farkas, Z.D.; Feinstein, J.; Ko, K.; Koontz, R.F.; Kroll, N.; Lavine, T.L.; Lee, T.G.; Miller, R.H.; Pearson, C.; Spalek, G.; Vlieks, A.E.; Wilson, P.B.

    1990-06-01

    The next linear collider will require 200 MW of rf power per meter of linac structure at relatively high frequency to produce an accelerating gradient of about 100 MV/m. The higher frequencies result in a higher breakdown threshold in the accelerating structure hence permit higher accelerating gradients per meter of linac. The lower frequencies have the advantage that high peak power rf sources can be realized. 11.42 GHz appears to be a good compromise and the effort at the Stanford Linear Accelerator Center (SLAC) is being concentrated on rf sources operating at this frequency. The filling time of the accelerating structure for each rf feed is expected to be about 80 ns. Under serious consideration at SLAC is a conventional klystron followed by a multistage rf pulse compression system, and the Crossed-Field Amplifier. These are discussed in this paper

  19. New developments in RF power sources

    International Nuclear Information System (INIS)

    Miller, R.H.

    1994-06-01

    The most challenging rf source requirements for high-energy accelerators presently being studied or designed come from the various electron-positron linear collider studies. All of these studies except TESLA (the superconducting entry in the field) have specified rf sources with much higher peak powers than any existing tubes at comparable high frequencies. While circular machines do not, in general, require high peak power, the very high luminosity electron-positron rings presently being designed as B factories require prodigious total average rf power. In this age of energy conservation, this puts a high priority on high efficiency for the rf sources. Both modulating anodes and depressed collectors are being investigated in the quest for high efficiency at varying output powers

  20. High RF Power Production for CLIC

    CERN Document Server

    Syratchev, I; Adli, E; Taborelli, M

    2007-01-01

    The CLIC Power Extraction and Transfer Structure (PETS) is a passive microwave device in which bunches of the drive beam interact with the impedance of the periodically loaded waveguide and excite preferentially the synchronous mode. The RF power produced (several hundred MW) is collected at the downstream end of the structure by means of the Power Extractor and delivered to the main linac structure. The PETS geometry is a result of multiple compromises between beam stability and main linac RF power needs. Another requirement is to provide local RF power termination in case of accelerating structure failure (ON/OFF capability). Surface electric and magnetic fields, power extraction method, HOM damping, ON/OFF capability and fabrication technology were all evaluated to provide a reliable design

  1. Low reflectance high power RF load

    Science.gov (United States)

    Ives, R. Lawrence; Mizuhara, Yosuke M.

    2016-02-02

    A load for traveling microwave energy has an absorptive volume defined by cylindrical body enclosed by a first end cap and a second end cap. The first end cap has an aperture for the passage of an input waveguide with a rotating part that is coupled to a reflective mirror. The inner surfaces of the absorptive volume consist of a resistive material or are coated with a coating which absorbs a fraction of incident RF energy, and the remainder of the RF energy reflects. The angle of the reflector and end caps is selected such that reflected RF energy dissipates an increasing percentage of the remaining RF energy at each reflection, and the reflected RF energy which returns to the rotating mirror is directed to the back surface of the rotating reflector, and is not coupled to the input waveguide. Additionally, the reflector may have a surface which generates a more uniform power distribution function axially and laterally, to increase the power handling capability of the RF load. The input waveguide may be corrugated for HE11 mode input energy.

  2. Advances in high-power rf amplifiers

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  3. RF Wireless Power Transfer: Regreening Future Networks

    OpenAIRE

    Tran, Ha-Vu; Kaddoum, Georges

    2017-01-01

    Green radio communication is an emerging topic since the overall footprint of information and communication technology (ICT) services is predicted to triple between 2007 and 2020. Given this research line, energy harvesting (EH) and wireless power transfer (WPT) networks can be evaluated as promising approaches. In this paper, an overview of recent trends for future green networks on the platforms of EH and WPT is provided. By rethinking the application of radio frequency (RF)-WPT, a new conc...

  4. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  5. Rf-to-dc power converters for wireless powering

    KAUST Repository

    Ouda, Mahmoud Hamdy

    2016-12-01

    Various examples are provided related to radio frequency (RF) to direct current (DC) power conversion. In one example, a RF-to-DC converter includes a fully cross-coupled rectification circuit including a pair of forward rectifying transistors and a feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a fully cross-coupled rectification circuit including a pair of forward rectifying transistors; and providing a DC output voltage from an output connection of the fully cross-coupled rectification circuit, where gating of the pair of forward rectifying transistors is controlled by feedback bias signals provided to gates of the pair of forward rectifying transistors via feedback branch elements.

  6. Characteristic performance of radio-frequency(RF) plasma heating using inverter RF power supplies

    International Nuclear Information System (INIS)

    Imai, Takahiro; Uesugi, Yoshihiko; Takamura, Shuichi; Sawada, Hiroyuki; Hattori, Norifumi

    2000-01-01

    High heat flux plasma are produced by high powe (∼14 kW) ICRF heating using inverter power supplies in the linear divertor simulator NAGDIS-II. The power flow of radiated rf power is investigated by a calorimetric method. Conventional power calculation using antenna voltage and current gives that about 70% of the rf power is radiated into the plasma. But increase of the heat load at the target and anode is about 10% of the rf power. Through this experiment, we find that about half of the rf power is lost at the antenna surface through the formation of rf induced sheath. And about 30% of the power is lost into the vacuum vessel through the charge exchange and elastic collision of ions with neutrals. (author)

  7. Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hsu Cheng-Shing; Huang Cheng-Liang

    2001-01-01

    Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

  8. Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

    2016-12-15

    Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

  9. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  10. Influence of RF power on the properties of sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-07-15

    Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. High power rf component testing for the NLC

    International Nuclear Information System (INIS)

    Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

    1998-09-01

    In the Next Linear Collider (NLC), the high power rf components must be capable of handling peak rf power levels in excess of 600 MW. In the current view of the NLC, even the rectangular waveguide components must transmit at least 300 MW rf power. At this power level, peak rf fields can greatly exceed 100 MV/m. The authors present recent results of high power tests performed at the Accelerator Structure Test Area (ASTA) at SLAC. These tests are designed to investigate the rf breakdown limits of several new components potentially useful for the NLC. In particular, the authors tested a new TE 01 --TE 10 circular to rectangular wrap-around mode converter, a modified (internal fin) Magic Tee hybrid, and an upgraded flower petal mode converter

  12. RF characterization and testing of ridge waveguide transitions for RF power couplers

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rajesh; Jose, Mentes; Singh, G.N. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Girish [Department of Electrical Engineering, IIT Bombay, Mumbai 400076,India (India); Bhagwat, P.V. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2016-12-01

    RF characterization of rectangular to ridge waveguide transitions for RF power couplers has been carried out by connecting them back to back. Rectangular waveguide to N type adapters are first calibrated by TRL method and then used for RF measurements. Detailed information is obtained about their RF behavior by measurements and full wave simulations. It is shown that the two transitions can be characterized and tuned for required return loss at design frequency of 352.2 MHz. This opens the possibility of testing and conditioning two transitions together on a test bench. Finally, a RF coupler based on these transitions is coupled to an accelerator cavity. The power coupler is successfully tested up to 200 kW, 352.2 MHz with 0.2% duty cycle.

  13. RF Power Transfer, Energy Harvesting, and Power Management Strategies

    Science.gov (United States)

    Abouzied, Mohamed Ali Mohamed

    Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various

  14. Rf power systems for the national synchrotron light source

    International Nuclear Information System (INIS)

    Dickinson, T.; Rheaume, R.H.

    1981-01-01

    The booster synchrotron and the two storage rings at the NSLS are provided with rf power systems of 3 kW, 50 kW, and 500 kW nominal output power, all at 53 MHz. This power is supplied by grounded grid tetrode amplifiers designed for television broadcast service. These amplifiers and associated power supplies, control and interlock systems, rf controls, and computer interface are described

  15. Development and advances in conventional high power RF systems

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1995-06-01

    The development of rf systems capable of producing high peak power (hundreds of megawatts) at relatively short pulse lengths (0.1--5 microseconds) is currently being driven mainly by the requirements of future high energy linear colliders, although there may be applications to industrial, medical and research linacs as well. The production of high peak power rf typically involves four basic elements: a power supply to convert ac from the ''wall plug'' to dc; a modulator, or some sort of switching element, to produce pulsed dc power; an rf source to convert the pulsed dc to pulsed rf power; and possibly an rf pulse compression system to further enhance the peak rf power. Each element in this rf chain from wall plug to accelerating structure must perform with high efficiency in a linear collider application, such that the overall system efficiency is 30% or more. Basic design concepts are discussed for klystrons, modulators and rf pulse compression systems, and their present design status is summarized for applications to proposed linear colliders

  16. Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing, E-mail: hezhibing802@163.com

    2016-03-15

    Graphical abstract: - Highlights: • The growth mechanism of defects in GDP films was studied upon plasma diagnosis. • Increasing rf power enhanced the etching effects of smaller-mass species. • The “void” defect was caused by high energy hydrocarbons bombardment on the surface. • The surface roughness was only 12.76 nm, and no “void” defect was observed at 30 W. - Abstract: The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T{sub 2}B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no “void” defect was observed.

  17. Embedded control system for high power RF amplifiers

    International Nuclear Information System (INIS)

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  18. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  19. RF power harvesting: a review on designing methodologies and applications

    Science.gov (United States)

    Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

    2017-12-01

    Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

  20. Novel rf power sensor based on capacitive MEMS technology

    NARCIS (Netherlands)

    Fernandez, L.J.; Visser, Eelke; Sesé, J.; Jansen, Henricus V.; Wiegerink, Remco J.; Flokstra, Jakob

    2003-01-01

    We present the theory, design, fabrication of and first measurements on a novel power for radio frequency (rf) signals, based on capacitive measurements. The novelty of this sensor is thtat it measures the force that is created between the rf signal and a grounded membrande suspended above the line

  1. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

    2006-01-01

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

  2. Design of an L-band normally conducting RF gun cavity for high peak and average RF power

    Energy Technology Data Exchange (ETDEWEB)

    Paramonov, V., E-mail: paramono@inr.ru [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Philipp, S. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Rybakov, I.; Skassyrskaya, A. [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Stephan, F. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany)

    2017-05-11

    To provide high quality electron bunches for linear accelerators used in free electron lasers and particle colliders, RF gun cavities operate with extreme electric fields, resulting in a high pulsed RF power. The main L-band superconducting linacs of such facilities also require a long RF pulse length, resulting in a high average dissipated RF power in the gun cavity. The newly developed cavity based on the proven advantages of the existing DESY RF gun cavities, underwent significant changes. The shape of the cells is optimized to reduce the maximal surface electric field and RF loss power. Furthermore, the cavity is equipped with an RF probe to measure the field amplitude and phase. The elaborated cooling circuit design results in a lower temperature rise on the cavity RF surface and permits higher dissipated RF power. The paper presents the main solutions and results of the cavity design.

  3. Negative ion mass spectra and particulate formation in rf silane plasma deposition experiments

    International Nuclear Information System (INIS)

    Howling, A.A.; Dorier, J.L.; Hollenstein, C.

    1992-09-01

    Negative ions have been clearly identified in silane rf plasmas used for the deposition of amorphous silicon. Mass spectra were measured for monosilicon up to pentasilicon negative ion radical groups in power-modulated plasmas by means of a mass spectrometer mounted just outside the glow region. Negative ions were only observed over a limited range of power modulation frequency which corresponds to particle-free conditions. The importance of negative ions regarding particulate formation is demonstrated and commented upon. (author) 3 figs., 19 refs

  4. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  5. High Power RF Transmitters for ICRF Applications on EAST

    International Nuclear Information System (INIS)

    Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

    2013-01-01

    An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

  6. Indoor Wireless RF Energy Transfer for Powering Wireless Sensors

    Directory of Open Access Journals (Sweden)

    H. Visser

    2012-12-01

    Full Text Available For powering wireless sensors in buildings, rechargeable batteries may be used. These batteries will be recharged remotely by dedicated RF sources. Far-field RF energy transport is known to suffer from path loss and therefore the RF power available on the rectifying antenna or rectenna will be very low. As a consequence, the RF-to-DC conversion efficiency of the rectenna will also be very low. By optimizing not only the subsystems of a rectenna but also taking the propagation channel into account and using the channel information for adapting the transmit antenna radiation pattern, the RF energy transport efficiency will be improved. The rectenna optimization, channel modeling and design of a transmit antenna are discussed.

  7. High power RF systems for the BNL ERL project

    Energy Technology Data Exchange (ETDEWEB)

    Zaltsman, A.; Lambiase, R.

    2011-03-28

    The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

  8. Peel-and-Stick Sensors Powered by Directed RF Energy

    Energy Technology Data Exchange (ETDEWEB)

    Lalau-Keraly, Christopher; Daniel, George; Lee, Joseph; Schwartz, David

    2017-08-30

    PARC, a Xerox Company, is developing a low-cost system of peel-and-stick wireless sensors that will enable widespread building environment sensor deployment with the potential to deliver up to 30% energy savings. The system is embodied by a set of RF hubs that provide power to automatically located sensor nodes, and relay data wirelessly to the building management system (BMS). The sensor nodes are flexible electronic labels powered by rectified RF energy transmitted by an RF hub and can contain multiple printed and conventional sensors. The system design overcomes limitations in wireless sensors related to power delivery, lifetime, and cost by eliminating batteries and photovoltaic devices. Sensor localization is performed automatically by the inclusion of a programmable multidirectional antenna array in the RF hub. Comparison of signal strengths while the RF beam is swept allows for sensor localization, reducing installation effort and enabling automatic recommissioning of sensors that have been relocated, overcoming a significant challenge in building operations. PARC has already demonstrated wireless power and temperature data transmission up to a distance of 20m with less than one minute between measurements, using power levels well within the FCC regulation limits in the 902-928 MHz ISM band. The sensor’s RF energy harvesting antenna achieves high performance with dimensions below 5cm x 9cm

  9. Rf-to-dc power converters for wireless powering

    KAUST Repository

    Ouda, Mahmoud Hamdy; Salama, Khaled N.

    2016-01-01

    feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a

  10. A capacitive rf power sensor based on mems technology

    NARCIS (Netherlands)

    Fernandez, L.J.

    2005-01-01

    Existing power sensors for RF signals are based on thermistors, diodes and thermocouples. These power sensors are used as terminating devices and therefore they dissipate the complete incoming signal. Furthermore, new telecommunication systems require low weight, volume and power consumption and a

  11. RF power consumption emulation optimized with interval valued homotopies

    DEFF Research Database (Denmark)

    Musiige, Deogratius; Anton, François; Yatskevich, Vital

    2011-01-01

    This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between...... the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions....... The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power...

  12. Design and manufacture of the RF power supply and RF transmission line for SANAEM project Prometheus

    Science.gov (United States)

    Turemen, G.; Ogur, S.; Ahiska, F.; Yasatekin, B.; Cicek, E.; Ozbey, A.; Kilic, I.; Unel, G.; Alacakir, A.

    2017-08-01

    A 1-5 MeV proton beamline is being built by the Turkish Atomic Energy Authority in collaboration with a number of graduate students from different universities. The primary goal of the project, is to acquire the design ability and manufacturing capability of all the components locally. SPP will be an accelerator and beam diagnostics test facility and it will also serve the detector development community with its low beam current. This paper discusses the design and construction of the RF power supply and the RF transmission line components such as its waveguide converters and its circulator. Additionally low and high power RF test results are presented to compare the performances of the locally produced components to the commercially available ones.

  13. X-band RF power sources for accelerator applications

    International Nuclear Information System (INIS)

    Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

    2011-01-01

    The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

  14. Review of tearing mode stabilization by RF power in tokamaks

    International Nuclear Information System (INIS)

    Giruzzi, G.; Zabiego, M.; Zohm, H.

    1999-01-01

    Control of tearing modes by means of heating and current drive inside the magnetic islands is one of the most important applications of RF power in tokamak reactors. The theoretical basis of this concept is reviewed, focusing on aspects related to RF-plasma interaction. Applications to the stabilization of neoclassical tearing modes in ITER by Electron Cyclotron Current Drive are presented to illustrate the basic physical dependences. The most significant experimental results and prospects for future applications are also discussed

  15. High Power RF Test Facility at the SNS

    CERN Document Server

    Kang, Yoon W; Campisi, Isidoro E; Champion, Mark; Crofford, Mark; Davis, Kirk; Drury, Michael A; Fuja, Ray E; Gurd, Pamela; Kasemir, Kay-Uwe; McCarthy, Michael P; Powers, Tom; Shajedul Hasan, S M; Stirbet, Mircea; Stout, Daniel; Tang, Johnny Y; Vassioutchenko, Alexandre V; Wezensky, Mark

    2005-01-01

    RF Test Facility has been completed in the SNS project at ORNL to support test and conditioning operation of RF subsystems and components. The system consists of two transmitters for two klystrons powered by a common high voltage pulsed converter modulator that can provide power to two independent RF systems. The waveguides are configured with WR2100 and WR1150 sizes for presently used frequencies: 402.5 MHz and 805 MHz. Both 402.5 MHz and 805 MHz systems have circulator protected klystrons that can be powered by the modulator capable of delivering 11 MW peak and 1 MW average power. The facility has been equipped with computer control for various RF processing and complete dual frequency operation. More than forty 805 MHz fundamental power couplers for the SNS superconducting linac (SCL) cavitites have been RF conditioned in this facility. The facility provides more than 1000 ft2 floor area for various test setups. The facility also has a shielded cave area that can support high power tests of normal conducti...

  16. Low power RF beam control electronics for the LEB

    International Nuclear Information System (INIS)

    Mestha, L.K.; Mangino, J.; Brouk, V.; Uher, T.; Webber, R.C.

    1993-05-01

    Beam Control Electronics for the Low Energy Booster (LEB) should provide a fine reference phase and frequency for the High Power RF System. Corrections applied on the frequency of the rf signal will reduce dipole synchrotron oscillations due to power supply regulation errors, errors in frequency source or errors in the cavity voltage. It will allow programmed beam radial position control throughout the LEB acceleration cycle. Furthermore the rf signal provides necessary connections during, adiabatic capture of the beam as injected into the LEB by the Linac and will guarantee LEB rf phase synchronism with the Medium Energy Booster (MEB) rf at a programmed time in the LEB cycle between a unique LEB bucket and a unique MEB bucket. We show in this paper a design and possible interfaces with other subsystems of the LEB such as the beam instrumentation, High Power RF Stations, global accelerator controls and the precision timing system. The outline of various components of the beam control system is also presented followed by some test results

  17. High-powered, solid-state rf systems

    International Nuclear Information System (INIS)

    Reid, D.W.

    1987-01-01

    Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

  18. Eighth CW and High Average Power RF Workshop

    CERN Document Server

    2014-01-01

    We are pleased to announce the next Continuous Wave and High Average RF Power Workshop, CWRF2014, to take place at Hotel NH Trieste, Trieste, Italy from 13 to 16 May, 2014. This is the eighth in the CWRF workshop series and will be hosted by Elettra - Sincrotrone Trieste S.C.p.A. (www.elettra.eu). CWRF2014 will provide an opportunity for designers and users of CW and high average power RF systems to meet and interact in a convivial environment to share experiences and ideas on applications which utilize high-power klystrons, gridded tubes, combined solid-state architectures, high-voltage power supplies, high-voltage modulators, high-power combiners, circulators, cavities, power couplers and tuners. New ideas for high-power RF system upgrades and novel ways of RF power generation and distribution will also be discussed. CWRF2014 sessions will start on Tuesday morning and will conclude on Friday lunchtime. A visit to Elettra and FERMI will be organized during the workshop. ORGANIZING COMMITTEE (OC): Al...

  19. Ambient RF energy scavenging: GSM and WLAN power density measurements

    NARCIS (Netherlands)

    Visser, H.J.; Reniers, A.C.F.; Theeuwes, J.A.C.

    2009-01-01

    To assess the feasibility of ambient RF energy scavenging, a survey of expected power density levels distant from GSM-900 and GSM-1800 base stations has been conducted and power density measurements have been performed in a WLAN environment. It appears that for distances ranging from 25 m to 100 m

  20. A 12 GHz RF Power Source for the CLIC Study

    Energy Technology Data Exchange (ETDEWEB)

    Schirm, Karl; /CERN; Curt, Stephane; /CERN; Dobert, Steffen; /CERN; McMonagle, Gerard; /CERN; Rossat, Ghislain; /CERN; Syratchev, Igor; /CERN; Timeo, Luca; /CERN; Haase, Andrew /SLAC; Jensen, Aaron; /SLAC; Jongewaard, Erik; /SLAC; Nantista, Christopher; /SLAC; Sprehn, Daryl; /SLAC; Vlieks, Arnold; /SLAC; Hamdi, Abdallah; /Saclay; Peauger, Franck; /Saclay; Kuzikov, Sergey; /Nizhnii Novgorod, IAP; Vikharev, Alexandr; /Nizhnii Novgorod, IAP

    2012-07-03

    The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

  1. A 12 GHZ RF Power source for the CLIC study

    CERN Document Server

    Peauger, F; Curt, S; Doebert, S; McMonagle, G; Rossat, G; Schirm, KM; Syratchev, I; Timeo, L; Kuzikhov, S; Vikharev, AA; Haase, A; Sprehn, D; Jensen, A; Jongewaard, EN; Nantista, CD; Vlieks, A

    2010-01-01

    The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

  2. High power RF test of an 805 MHz RF cavity for a muon cooling channel

    International Nuclear Information System (INIS)

    Li, Derun; Corlett, J.; MacGill, R.; Rimmer, R.; Wallig, J.; Zisman, M.; Moretti, A.; Qian, Z.; Wu, V.; Summers, D.; Norem, J.

    2002-01-01

    We present recent high power RF test results on an 805 MHz cavity for a muon cooling experiment at Lab G in Fermilab. In order to achieve high accelerating gradient for large transverse emittance muon beams, the cavity design has adopted a pillbox like shape with 16 cm diameter beam iris covered by thin Be windows, which are demountable to allow for RF tests of different windows. The cavity body is made from copper with stiff stainless steel rings brazed to the cavity body for window attachments. View ports and RF probes are available for visual inspections of the surface of windows and cavity and measurement of the field gradient. Maximum of three thermo-couples can be attached to the windows for monitoring the temperature gradient on the windows caused by RF heating. The cavity was measured to have Q 0 of about 15,000 with copper windows and coupling constant of 1.3 before final assembling. A 12 MW peak power klystron is available at Lab G in Fermilab for the high power test. The cavity and coupler designs were performed using the MAFIA code in the frequency and the time domain. Numerical simulation results and cold test measurements on the cavity and coupler will be presented for comparisons

  3. The RF power system for the SNS linac

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Reass, W.A.

    1998-01-01

    The initial goal of the SNS project is to produce a 1 MW average beam of protons with short pulse lengths onto a neutron-producing target. The objective of the SNS RF system is to generate 117 MW peak of pulsed 805 MHz microwave power with an accelerated beam pulse length of 1.04 ms at a 60 Hz repetition rate. The power system must be upgradeable in peak power to deliver 2 MW average power to the neutron target. The RF system also requires about 3 MW peak of RF power at 402.5 MHz, but that system is not discussed here. The design challenge is to produce an RF system at minimum cost, that is very reliable and economical to operate. The combination of long pulses and high repetition rates make conventional solutions, such as the pulse transformer and transmission line method, very expensive. The klystron, with a modulating anode, and 1.5 MW of peak output power is the baseline RF amplifier, an 56 are required in the baseline design. The authors discuss four power system configurations that are the candidates for the design. The baseline design is a floating-deck modulating anode system. A second power system being investigated is the fast-pulsed power supply, that can be turned on and off with a rise time of under 0.1 ms. This could eliminate the need for a modulator, and drastically reduce the energy storage requirements. A third idea is to use a pulse transformer with a series IGBT switch and a bouncer circuit on the primary side, as was done for the TESLA modulator. A fourth method is to use a series IGBT switch at high voltage, and not use a pulse transformer. The authors discuss the advantages and problems of these four types of power systems, but they emphasize the first two

  4. Microwave and RF vacuum electronic power sources

    CERN Document Server

    Carter, Richard G

    2018-01-01

    Do you design and build vacuum electron devices, or work with the systems that use them? Quickly develop a solid understanding of how these devices work with this authoritative guide, written by an author with over fifty years of experience in the field. Rigorous in its approach, it focuses on the theory and design of commercially significant types of gridded, linear-beam, crossed-field and fast-wave tubes. Essential components such as waveguides, resonators, slow-wave structures, electron guns, beams, magnets and collectors are also covered, as well as the integration and reliable operation of devices in microwave and RF systems. Complex mathematical analysis is kept to a minimum, and Mathcad worksheets supporting the book online aid understanding of key concepts and connect the theory with practice. Including coverage of primary sources and current research trends, this is essential reading for researchers, practitioners and graduate students working on vacuum electron devices.

  5. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  6. Modeling high-power RF accelerator cavities with SPICE

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1992-01-01

    The dynamical interactions between RF accelerator cavities and high-power beams can be treated on personal computers using a lumped circuit element model and the SPICE circuit analysis code. Applications include studies of wake potentials, two-beam accelerators, microwave sources, and transverse mode damping. This report describes the construction of analogs for TM mn0 modes and the creation of SPICE input for cylindrical cavities. The models were used to study continuous generation of kA electron beam pulses from a vacuum cavity driven by a high-power RF source

  7. Introduction to RF power amplifier design and simulation

    CERN Document Server

    Eroglu, Abdullah

    2015-01-01

    Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

  8. Glycol-Substitute for High Power RF Water Loads

    CERN Document Server

    Ebert, Michael

    2005-01-01

    In water loads for high power rf applications, power is dissipated directly into the coolant. Loads for frequencies below approx. 1GHz are ordinarily using an ethylene glycol-water mixture as coolant. The rf systems at DESY utilize about 100 glycol water loads with powers ranging up to 600kW. Due to the increased ecological awareness, the use of glycol is now considered to be problematic. In EU it is forbidden to discharge glycol into the waste water system. In case of cooling system leakages one has to make sure that no glycol is lost. Since it is nearly impossible to avoid any glycol loss in large rf systems, a glycol-substitute was searched for and found. The found sodium-molybdate based substitute is actually a additive for corrosion protection in water systems. Sodium-molybdate is ecologically harmless; for instance, it is also used as fertilizer in agriculture. A homoeopathic dose of 0.4% mixed into deionised water gives better rf absorption characteristics than a 30% glycol mixture. The rf coolant feat...

  9. RF Power Requirements for PEFP SRF Cavity Test

    International Nuclear Information System (INIS)

    Kim, Han Sung; Seol, Kyung Tae; Kwon, Hyeok Jung; Cho, Yong Sub

    2011-01-01

    For the future extension of the PEFP (Proton Engineering Frontier Project) Proton linac, preliminary study on the SRF (superconducting radio-frequency) cavity is going on including a five-cell prototype cavity development to confirm the design and fabrication procedures and to check the RF and mechanical properties of a low-beta elliptical cavity. The main parameters of the cavity are like followings. - Frequency: 700 MHz - Operating mode: TM010 pi mode - Cavity type: Elliptical - Geometrical beta: 0.42 - Number of cells: 5 - Accelerating gradient: 8 MV/m - Epeak/Eacc: 3.71 - Bpeak/Eacc: 7.47 mT/(MV/m) - R/Q: 102.3 ohm - Epeak: 29.68 MV/m (1.21 Kilp.) - Geometrical factor: 121.68 ohm - Cavity wall thickness: 4.3 mm - Stiffening structure: Double ring - Effective length: 0.45 m For the test of the cavity at low temperature of 4.2 K, many subsystems are required such as a cryogenic system, RF system, vacuum system and radiation shielding. RF power required to generate accelerating field inside cavity depends on the RF coupling parameters of the power coupler and quality factor of the SRF cavity and the quality factor itself is affected by several factors such as operating temperature, external magnetic field level and surface condition. Therefore, these factors should be considered to estimate the required RF power for the SRF cavity test

  10. High power RF systems for LEHIPA of ADS

    International Nuclear Information System (INIS)

    Pande, Manjiri; Shrotriya, Sandip; Sharma, Sonal; Rao, B.V.R.; Mishra, J.K.; Patel, Niranjan; Gupta, S.K.

    2011-01-01

    Worldwide accelerator driven sub-critical system (ADS) has generated a huge interest for various reasons. In India, as a part of accelerator driven sub-critical system (ADS) program, a normal conducting, low energy high intensity proton accelerator (LEHIPA) of energy 20 MeV and beam current of 30 mA is being developed in Bhabha Atomic Research Centre (BARC). LEHIPA comprises of Electron Cyclotron Resonance (ECR) ion source (50 KeV), Radio Frequency Quadrupole (RFQ) accelerator (3 MeV) and Drift tube Linac (DTL) 1 and 2 (10 MeV and 20 MeV respectively). As per the accelerator physics design, RFQ requires nearly 530 kW RF power while each of DTL need 900 kW. Each accelerating cavity will be driven by a one- megawatt (CW) klystron based high power RF (HPRF) system at 352.21 MHz. Three such RF systems will be developed. The RF system has been designed around five cavity klystron tube TH2089F (Thales make) capable of delivering 1 MW continuous wave power at 352.21 MHz. The klystron has a gain of 40 dB and efficiency around 62 %. Each of the RF system comprises of a low power solid state driver (∼ 100 W), klystron tube, harmonic filter, directional coupler, Y-junction circulator (AFT make), RF load and WR2300 wave guide based RF transmission line each of 1 MW capacity. It also includes other subsystems like bias supplies (high voltage (HV) and low voltage (LV)), HV interface system, interlock and protection circuits, dedicated low conductivity water-cooling, pulsing circuitry/mechanisms etc. WR 2300 based RF transmission line transmits and feeds the RE power from klystron source to respective accelerating cavity. This transmission line starts from second port of the circulator and consists of straight sections, full height to half height transition, magic Tee, termination load at the centre of magic tee, half height sections, directional couplers and RE windows. For X-ray shielding, klystron will be housed in a lead (3 mm) based shielded cage. This system set up has a

  11. Modeling and design techniques for RF power amplifiers

    CERN Document Server

    Raghavan, Arvind; Laskar, Joy

    2008-01-01

    The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

  12. Radiofrequency power deposition during magnetic resonance diagnostic examinations

    International Nuclear Information System (INIS)

    Grandolfo, M.; Vecchia, P.

    1988-01-01

    Magnetic Resonance Imaging and Spectroscopy (MRI, MRS) require that subjects be exposed to radiofrequency field, and the corresponding energy absorption leads to tissue heating. The main question, thus, to be considered in connection to safety and health aspects is related to the specific absorption rate (SAR) in the imaged subject and the exposure durations which might put a practical limit on the pulse sequence which can be used. In this paper some models and experimental results for radiofrequency power deposition in MRI and MRS machines are reviewed. Models show that energy dissipation is a function of the frequency, RF incident power density, exposure duration, coupling between the RF coil and the subject, and several properties of the exposed tissue, including conductivity, dielectric constant, specific gravity, size, and orientation relative to the field polarization. The ability of the body's normal thermoregulatory responses to cope with high levels of RF energy deposition must be also taken into account

  13. RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

    2009-01-01

    Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

  14. Wireless sensors remotely powered by RF energy

    NARCIS (Netherlands)

    Visser, Hubregt J.; Vullers, Ruud J.M.

    2012-01-01

    Wireless, radiated far-field energy is being employed for charging a battery. This battery, while being recharged, is used to power a commercially of the shelf, low power, wireless sensor node. Propagation conditions in common office and house configurations are investigated experimentally. These

  15. Coating power RF components with TiN

    International Nuclear Information System (INIS)

    Kuchnir, M.; Hahn, E.

    1995-03-01

    A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used

  16. High power testing of a 17 GHz photocathode RF gun

    International Nuclear Information System (INIS)

    Chen, S.C.; Danly, B.G.; Gonichon, J.

    1995-01-01

    The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell (π mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design

  17. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  18. Time-resolved measurements of highly-polymerised negative ions in rf silane plasma deposition experiments

    International Nuclear Information System (INIS)

    Howling, A.A.; Sansonnens, L.; Dorier, J.L.; Hollenstein, C.

    1993-07-01

    The time-resolved fluxes of negative polysilicon hydride ions from a power-modulated rf silane plasma have been measured by quadrupole mass spectrometry and modeled using a simple polymerisation scheme. Experiments were performed with plasma parameters suitable for high-quality amorphous silicon deposition. Polysilicon hydride anions diffuse from the plasma with low energy (approximately 0.5 eV) during the afterglow after the electron density has decayed and the sheath fields have collapsed. The mass-dependence of the temporal behavior of the anion loss flux demonstrates that the plasma composition is influenced by the modulation frequency. The negative species attain much higher masses than the positive or neutral species, and anions containing as many as sixteen silicon atoms have been observed, corresponding to the 500 amu limit of the mass spectrometer. This suggests that negative ions could be the precursors to particle formation. Ion-molecule and ion-ion reactions are discussed and a simple negative ion polymerisation scheme is proposed which qualitatively reproduces the experimental results. The model shows that the densities of high mass negative ions in the plasma are strongly reduced by modulation frequencies near 1 kHz. Each plasma period is then too short for the polymerisation chain to propagate to high masses before the elementary anions are lost in each subsequent afterglow period. This explains why modulation of the rf power can reduce particle contamination. We conclude that, for the case of silane rf plasmas, the initiation steps which ultimately lead to particle contamination proceed by negative ion polymerisation. (author) 15 figs., 72 refs

  19. Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%

    CERN Document Server

    Baikov, Andrey Yu; Syratchev, Igor

    2015-01-01

    The increase in efficiency of RF power generation for future large accelerators is considered a high priority issue. The vast majority of the existing commercial high-power RF klystrons operates in the electronic efficiency range between 40% and 55%. Only a few klystrons available on the market are capable of operating with 65% efficiency or above. In this paper, a new method to achieve 90% RF power conversion efficiency in a klystron amplifier is presented. The essential part of this method is a new bunching technique - bunching with bunch core oscillations. Computer simulations confirm that the RF production efficiency above 90% can be reached with this new bunching method. The results of a preliminary study of an L-band, 20-MW peak RF power multibeam klystron for Compact Linear Collider with the efficiency above 85% are presented.

  20. LTE RF subsystem power consumption modeling

    DEFF Research Database (Denmark)

    Musiige, Deogratius; Vincent, Laulagnet; Anton, François

    2012-01-01

    the power consumption. An analysis of modeling approaches was conducted and the modeling approach with the least sum of squared errors is used to compute the emulation model. The neural networks applying the Pseudo-Gauss Newton algorithm for optimization proved to have the least sum of squared errors....... This approach was validated against a real life scenario with a relative error of 5.77%....

  1. LTE modem power consumption, SAR and RF signal strength emulation

    DEFF Research Database (Denmark)

    Musiige, Deogratius; Vincent, Laulagnet; Anton, François

    2012-01-01

    This paper presents a new methodology for emulating the LTE modem power consumption, emitted SAR and RF signal strength when transmitting an LTE signal. The inputs of the methodology are: modem logical/protocol commands, time advance, near-field specifier, and antenna characteristics. The power...... emulation model(s) are computed by a two layer 451 neural network based on physical power measurements. SAR is emulated by polynomial interpolation models based on FDTD simulations. The accuracies of the mathematical function approximations for the emulation models of power and SAR are 5.19% and 3...

  2. Dependence of RF power on the content and configuration of hydrogen in amorphous hydrogenated silicon by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Ushita, K; Mogi, K; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Infrared absorption spectra at stretching bands of Si-H were investigated in hydrogenated amorphous silicon fabricated by reactive sputtering in the atmosphere of Ar and H/sub 2/ (10 mole%) at various input rf powers in the range from 0.8 to 3.8 W/cm/sup 2/. Hydrogen content mainly due to the configuration of Si=H/sub 2/ in the film increased with the decreasing rf power, as the deposition rate was decreased. On the other hand, the quantity of the monohydride (Si-H) configuration depended less on the power. Attachment of hydrogen molecules onto the fresh and reactive surface of silicon deposited successively was proposed for possible process of hydrogen incusion into amorphous silicon resulting in Si=H/sub 2/ configuration. The photoconductivity increased as the input power became higher, when the deposition rate also increased linearly with the power.

  3. Development of a large proton accelerator for innovative researches; development of high power RF source

    Energy Technology Data Exchange (ETDEWEB)

    Chung, K. H.; Lee, K. O.; Shin, H. M.; Chung, I. Y. [KAPRA, Seoul (Korea); Kim, D. I. [Inha University, Incheon (Korea); Noh, S. J. [Dankook University, Seoul (Korea); Ko, S. K. [Ulsan University, Ulsan (Korea); Lee, H. J. [Cheju National University, Cheju (Korea); Choi, W. H. [Korea Advanced Institute of Science and Technology, Taejeon (Korea)

    2002-05-01

    This study was performed with objective to design and develop the KOMAC proton accelerator RF system. For the development of the high power RF source for CCDTL(coupled cavity drift tube linac), the medium power RF system using the UHF klystron for broadcasting was integrated and with this RF system we obtained the basic design data, operation experience and code-validity test data. Based on the medium power RF system experimental data, the high power RF system for CCDTL was designed and its performed was analyzed. 16 refs., 64 figs., 27 tabs. (Author)

  4. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  6. RF Energy Harvesting for Ubiquitous, Zero Power Wireless Sensors

    Directory of Open Access Journals (Sweden)

    Warda Saeed

    2018-01-01

    Full Text Available This paper presents a review of wireless power transfer (WPT followed by a comparison between ambient energy sources and an overview of different components of rectennas that are used for RF energy harvesting. Being less costly and environment friendly, rectennas are used to provide potentially inexhaustible energy for powering up low power sensors and portable devices that are installed in inaccessible areas where frequent battery replacement is difficult, if not impossible. The current challenges in rectenna design and a detailed comparison of state-of-the-art rectennas are also presented.

  7. Practical test of the LINAC4 RF power system

    CERN Document Server

    Schwerg, N

    2011-01-01

    The high RF power for the Linac4 accelerating structures will be generated by thirteen 1.3 MW klystrons, previously used for the CERN LEP accelerator, and six new klystrons of 2.8 MW all operating at a frequency of 352.2 MHz. The power distribution scheme features a folded magic tee feeding the power from one 2.8 MW klystron to two LEP circulators. We present first results from the Linac4 test place, validating the approach and the used components as well as reporting on the klystron re-tuning activities.

  8. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  9. Development of solid oxide fuel cells by applying DC and RF plasma deposition technologies

    Energy Technology Data Exchange (ETDEWEB)

    Schiller, G.; Henne, R.; Lang, M.; Mueller, M. [Deutsches Zentrum fuer Luft- und Raumfahrt (DLR), Institut fuer Technische Thermodynamik, Postfach 800370, 70503 Stuttgart (Germany)

    2004-04-01

    Based on advanced plasma deposition technology with both DC and RF plasmas DLR Stuttgart has developed a concept of a planar SOFC with consecutive deposition of all layers of a thin-film cell onto a porous metallic substrate support. This concept is an alternative approach to conventionally used sintering techniques for SOFC fabrication without needing any sintering steps or other thermal post-treatment. Furthermore, is has the potential to be developed into an automated continous production process. For both stationary and mobile applications, adequate stack designs and stack technologies have been developed. Future development work will focus on light-weight stacks to be applied as an Auxillary Power Unit (APU) for on-board electricity supply in passenger cars and airplanes. This paper describes the plasma deposition technologies used for cell fabrication and the DLR spray concept including the resulting stack designs. The current status of development and recent progress with respect to materials development and electrochemical characterization of single cells and short-stacks is presented. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  10. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan [Stanford Univ., CA (United States)

    2008-12-01

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  11. Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Sahoo, A.K.; Liu, C.Y.

    2015-12-01

    The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50 W, 60 W and 70 W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70 W power deposited a-IGZO film. It was 6° for the 60 W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25 ms and 2.96 ms, respectively. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment control cell. - Highlights: • Radio-frequency power of indium gallium zinc oxide film deposition was studied. • The oblique deposition technique was used to prepare the alignment layers. • The liquid crystal pretilt angle was about 13° using 70 W. • The corresponding liquid crystal cells exhibited fast response time at 4.21 ms. • The cells showed low threshold voltage of 1.78 V and excellent contrast ratio.

  12. LCLS-II high power RF system overview and progress

    Energy Technology Data Exchange (ETDEWEB)

    Yeremian, Anahid Dian

    2015-10-07

    A second X-ray free electron laser facility, LCLS-II, will be constructed at SLAC. LCLS-II is based on a 1.3 GHz, 4 GeV, continuous-wave (CW) superconducting linear accelerator, to be installed in the first kilometer of the SLAC tunnel. Multiple types of high power RF (HPRF) sources will be used to power different systems on LCLS-II. The main 1.3 GHz linac will be powered by 280 1.3 GHz, 3.8 kW solid state amplifier (SSA) sources. The normal conducting buncher in the injector will use four more SSAs identical to the linac SSAs but run at 2 kW. Two 185.7 MHz, 60 kW sources will power the photocathode dual-feed RF gun. A third harmonic linac section, included for linearizing the bunch energy spread before the first bunch compressor, will require sixteen 3.9 GHz sources at about 1 kW CW. A description and an update on all the HPRF sources of LCLS-II and their implementation is the subject of this paper.

  13. Spallation Neutron Source High Power RF Installation and Commissioning Progress

    CERN Document Server

    McCarthy, Michael P; Bradley, Joseph T; Fuja, Ray E; Gurd, Pamela; Hardek, Thomas; Kang, Yoon W; Rees, Daniel; Roybal, William; Young, Karen A

    2005-01-01

    The Spallation Neutron Source (SNS) linac will provide a 1 GeV proton beam for injection into the accumulator ring. In the normal conducting (NC) section of this linac, the Radio Frequency Quadupole (RFQ) and six drift tube linac (DTL) tanks are powered by seven 2.5 MW, 402.5 MHz klystrons and the four coupled cavity linac (CCL) cavities are powered by four 5.0 MW, 805 MHz klystrons. Eighty-one 550 kW, 805 MHz klystrons each drive a single cavity in the superconducting (SC) section of the linac. The high power radio frequency (HPRF) equipment was specified and procured by LANL and tested before delivery to ensure a smooth transition from installation to commissioning. Installation of RF equipment to support klystron operation in the 350-meter long klystron gallery started in June 2002. The final klystron was set in place in September 2004. Presently, all RF stations have been installed and high power testing has been completed. This paper reviews the progression of the installation and testing of the HPRF Sys...

  14. Rf power amplification by energy storage and switching

    International Nuclear Information System (INIS)

    Vernon, W.

    1989-01-01

    This paper reports that during the last decade there have been several suggestions for RF storage and switching schemes. The principle behind these schemes is simply that energy from a source which is on for a long time at moderate power can be stored in a resonant cavity and dumped (switched) in a short time to yield higher power. This is also the basis of SLED which is driving the SLC, but the major difference is in the switching and the proposed power gains. In the case of SLED there is no switch only a phase agile RF source, and the maximum power gain is about a factor of 3. Proposed storage and switching schemes are often based on large ratios of charge to discharge times, say 5 μsec/50 nsec = 100 which could be the power amplification ratio. An early demonstration of the switching of a superconducting cavity was reported. It was observed that a peak power gain of 9 at low power levels with a cold cavity and a room-temperature switch. The switch was a He gas filled tube positioned in the leg of a waveguide T so that a η/2 stub turned into a η/4 stub when the gas broke down and became a good conductor. All switches encountered to date are some variant of this technique; the stubs reflects back an out-of-phase signal which cancels the one from the cavity so that no power escapes while the low-loss dielectric tube is non-conducting

  15. Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tomoya, E-mail: tomoya@ecei.tohoku.ac.jp; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-04-30

    Vanadium (V) doped ZnO (VZO) thin films were deposited on flexible polymer and quartz substrates by RF magnetron sputtering, and influences of deposition parameters of V concentration, RF power and growth temperature on resistivity, transmittance and crystallinity were investigated. For the polymer substrates, both a high heat-resistant polycarbonate (PC) film and a functional-layer-coated PC film were adopted. The resistivity decreased gradually but the transmittance was worsened with increasing V concentration. Low RF power and high growth temperature improved both transparency and conductivity. By over-coating of the functional layers, c-axis orientation was deteriorated while low-resistivity and high-transmittance characteristics were achieved. Resistivity and average visible-transmittance (wavelength = 450–800 nm) of VZO films on untreated PC and over-coated PC substrates were 0.98 mΩ cm and 83.7%, and 1.2 mΩ cm and 80.3%, respectively, at V concentration of 2 at.%, RF power of 100 W and growth temperature of 175 °C. VZO films on the polymer substrates had slightly high resistivity but nearly the same optical transmittance, compared to those on quartz, under the identical deposition parameters. These results indicate that good electrical and optical properties can be achieved for the VZO films on PC substrate. - Highlights: • V-doped ZnO (VZO) was deposited on polymer substrate. • Effects of V concentration, RF power and growth temperature were investigated. • Resistivity decreased gradually with increasing V concentration. • Low RF power was suitable to obtain low resistivity and high transmittance. • High growth temperature improved both transparency and conductivity.

  16. Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2008-01-01

    An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

  17. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    International Nuclear Information System (INIS)

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  18. Design of an RF Antenna for a Large-Bore, High Power, Steady State Plasma Processing Chamber for Material Separation

    International Nuclear Information System (INIS)

    Rasmussen, D.A.; Freeman, R.L.

    2001-01-01

    The purpose of this Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC, (Contractor), and Archimedes Technology Group, (Participant) is to evaluate the design of an RF antenna for a large-bore, high power, steady state plasma processing chamber for material separation. Criteria for optimization will be to maximize the power deposition in the plasma while operating at acceptable voltages and currents in the antenna structure. The project objectives are to evaluate the design of an RF antenna for a large-bore, high power, steady state plasma processing chamber for material separation. Criteria for optimization will be to maximize the power deposition in the plasma while operating at acceptable voltages and currents in the antenna structure

  19. Development of new S-band RF window for stable high-power operation in linear accelerator RF system

    Science.gov (United States)

    Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

    2017-09-01

    For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

  20. RF plasma deposition of thin SixGeyCz:H films using a combination of organometallic source materials

    International Nuclear Information System (INIS)

    Rapiejko, C.; Gazicki-Lipman, M.; Klimek, L.; Szymanowski, H.; Strojek, M.

    2004-01-01

    Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, mμ-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A x (IV)B y (IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si x C y :H films) or organogermanium compounds (to deposit Ge x C y :H films), as source substances. The present paper reports on a RF plasma deposition of a Si x Ge y C z :H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm 3 ) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach

  1. High voltage power supplies for INDUS-2 RF system

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Hannurkar, P.R.

    2003-01-01

    The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

  2. Development of C-band High-Power Mix-Mode RF Window

    CERN Document Server

    Michizono, S; Matsumoto, T; Nakao, K; Takenaka, T

    2004-01-01

    High power c-band (5712 MHz) rf system (40 MW, 2 μs, 50 Hz) is under consideration for the electron-linac upgrade aimed for the super KEKB project. An rf window, which isolates the vacuum and pass the rf power, is one of the most important components for the rf system. The window consists of a ceramic disk and a pill-box housing. The mix-mode rf window is designed so as to decrease the electric field on the periphery of the ceramic disk. A resonant ring is assembled in order to examine the high-power transmission test. The window was tested up to the transmission power of 160 MW. The rf losses are also measured during the rf operation.

  3. Low power microwave tests on RF gun prototype of the Iranian Light Source Facility

    Directory of Open Access Journals (Sweden)

    A Sadeghipanah

    2017-08-01

    Full Text Available In this paper, we introduce RF electron gun of Iranian Light Source Facility (ILSF pre-injection system. Design, fabrication and low-power microwave tests results of the prototype RF electron gun have been described in detail. This paper also explains the tuning procedure of the prototype RF electron gun to the desired resonant frequency. The outcomes of this project brighten the path to the fabrication of the RF electron gun by the local industries  

  4. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

    NARCIS (Netherlands)

    Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

    2002-01-01

    This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

  5. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  6. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Science.gov (United States)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  7. GE PETtrace RF power failures related to poor power quality

    OpenAIRE

    Bender, B. R.; Erdahl, C. E.; Dick, D. W.

    2015-01-01

    Introduction Anyone who has ever overseen the installation of a new cyclotron is aware of the importance of addressing the numerous vendor-supplied site specifications prior to its arrival. If the site is not adequately prepared, the facility may face project cost overruns, poor cyclotron performance and unintended maintenance costs. Once a facility has identified the space, providing sufficient power is the next step. Every cyclotron vendor will provide you with a set of power specificati...

  8. Wirelessly powered microfluidic dielectrophoresis devices using printable RF circuits.

    Science.gov (United States)

    Qiao, Wen; Cho, Gyoujin; Lo, Yu-Hwa

    2011-03-21

    We report the first microfluidic device integrated with a printed RF circuit so the device can be wirelessly powered by a commercially available RFID reader. For conventional dielectrophoresis devices, electrical wires are needed to connect the electric components on the microchip to external equipment such as power supplies, amplifiers, function generators, etc. Such a procedure is unfamiliar to most clinicians and pathologists who are used to working with a microscope for examination of samples on microscope slides. The wirelessly powered device reported here eliminates the entire need for wire attachments and external instruments so the operators can use the device in essentially the same manner as they do with microscope slides. The integrated circuit can be fabricated on a flexible plastic substrate at very low cost using a roll-to-roll printing method. Electrical power at 13.56 MHz transmitted by a radio-frequency identification (RFID) reader is inductively coupled to the printed RFIC and converted into 10 V DC (direct current) output, which provides sufficient power to drive a microfluidic device to manipulate biological particles such as beads and proteins via the DC dielectrophoresis (DC-DEP) effect. To our best knowledge, this is the first wirelessly powered microfluidic dielectrophoresis device. Although the work is preliminary, the device concept, the architecture, and the core technology are expected to stimulate many efforts in the future and transform the technology to a wide range of clinical and point-of-care applications. This journal is © The Royal Society of Chemistry 2011

  9. Voltage uniformity study in large-area reactors for RF plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sansonnens, L.; Pletzer, A.; Magni, D.; Howling, A.A.; Hollenstein, C. [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP); Schmitt, J.P.M. [Balzers Process Systems, Palaiseau (France)

    1996-09-01

    Non-uniform voltage distribution across the electrode area results in inhomogeneous thin-film RF plasma deposition in large area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode area is presented. The results of this model are in good agreement with measurements performed without plasma at 13.56 MHz and 70 MHz in a large area reactor. The principal voltage inhomogeneities are caused by logarithmic singularities in the vicinity of RF connections and not by standing waves. These singularities are only described by a two-dimensional model and cannot be intuitively predicted by analogy to a one-dimensional case. Plasma light emission measurements and thickness homogeneity studies of a-Si:H films show that the plasma reproduces these voltage inhomogeneities. Improvement of the voltage uniformity is investigated by changing the number and position of the RF connections. (author) 13 figs., 20 refs.

  10. Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

    KAUST Repository

    Rakia, Tamer

    2016-02-26

    Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non- coherent hybrid FSO/RF systems, employing an adaptive combining scheme. Specifically, we activate the RF link along with the FSO link when FSO link quality is unacceptable, and adaptively set RF transmission power to ensure constant combined signal-to-noise ratio at receiver terminal. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are derived. Numerical examples show that, the hybrid FSO/RF systems with power adaptation achieve considerable outage performance improvement over conventional hybrid FSO/RF systems without power adaptation. © 2015 IEEE.

  11. A describing function approach to bipolar RF-power amplifier simulation

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    1981-01-01

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

  12. The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

    Directory of Open Access Journals (Sweden)

    Accarat Chaoumead

    2012-01-01

    Full Text Available Transparent conductive titanium-doped indium oxide (ITiO films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4  Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4  Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

  13. Electron diode oscillators for high-power RF generation

    International Nuclear Information System (INIS)

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  14. Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Sea-Fue Wang

    2014-01-01

    Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

  15. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  16. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  17. Power excitation by the use of a rf wiggler

    International Nuclear Information System (INIS)

    Ruggiero, A.G.

    1992-01-01

    It is well-known that there are difficulties to obtain rf power sources of significant amount for frequencies larger than 3 GHz. Yet, rf sources in the centimeter/millimeter wavelength range would be very useful to drive, for example, high-gradient accelerating linacs for electron-positron linear colliders. We would like to propose an alternative method to produce such radiation. It makes use of a short electron bunch traveling along the axis of a waveguide which is at the same time excited by a TM propagating electromagnetic wave. It is well known that radiation can be obtained by wiggling the motion of the electrons in a direction perpendicular to the main one. The wiggling action can be included by electromagnetic fields in a fashion similar to the one caused by wiggler magnets. We found that an interesting mode of operation is to drive the waveguide with an excitation frequency very close to the cut off. For such excitation, the corresponding e.m. wave travels with a very large phase velocity which in turn has the effect to increase the wiggling action on the electron bunch. Our method, to be effective, relies also on the coherence of the radiation; that is the bunch length is taken to be considerably shorter than the radiated wavelength. In this case, the total power radiated should be proportional to the square of the total number of electrons in the bunch. The paper concludes with possible modes of operation, a list of performance parameters and a proposed experimental set-up

  18. Direct visual observation of powder dynamics in RF plasma-assisted deposition

    International Nuclear Information System (INIS)

    Howling, A.A.; Hollenstein, C.; Paris, P.J.

    1991-04-01

    Contamination due to particles generated and suspended in silane rf plasmas is investigated. Powder is rendered visible by illumination of the reactor volume. This simple diagnostic for global, spatio-temporal powder dynamics is used to study particle formation, trapping and powder reduction by power modulation. (author) 4 figs., 11 refs

  19. Summary of the 3rd workshop on high power RF-systems for accelerators

    International Nuclear Information System (INIS)

    Sigg, P.K.

    2005-01-01

    The aim of this workshop was to bring together experts from the field of CW and high average power RF systems. The focus was on operational and reliability issues of high-power amplifiers using klystrons and tubes, large power supplies; as well as cavity design and low-level RF and feedback control systems. All these devices are used in synchrotron radiation facilities, high power linacs and collider rings, and cyclotrons. Furthermore, new technologies and their applications were introduced, amongst other: high power solid state amplifiers, IOT amplifiers, and high voltage power supplies employing solid state controllers/crowbars. Numerical methods for complete rf-field modeling of complex RF structures like cyclotrons were presented, as well as integrated RF-cavity designs (electro-magnetic fields and mechanical structure), using numerical methods. (author)

  20. Analysis of Passive RF-DC Power Rectification and Harvesting Wireless RF Energy for Micro-watt Sensors

    Directory of Open Access Journals (Sweden)

    Antwi Nimo

    2015-04-01

    Full Text Available In this paper, analytical modeling of passive rectifying circuits and the harvesting of electromagnetic (EM power from intentionally generated as well as from ubiquitous sources are presented. The presented model is based on the linearization of rectifying circuits. The model provides an accurate method of determining the output characteristics of rectifying circuits. The model was verified with Advance Design System (ADS Harmonic balance (HB simulations and measurements. The results from the presented model were in agreement with simulations and measurements. Consequently design considerations and trade-off of radio frequency (RF harvesters are discussed. To verify the exploitation of ambient RF power sources for operation of sensors, a dual-band antenna with a size of ~λ/4 at 900MHz and a passive dual-band rectifier that is able to power a commercial Thermo-Hygrometer requiring ~1.3V and 0.5MΩ from a global system for mobile communications (GSM base station is demonstrated. The RF power delivered by the receiving dual-band antenna at a distance of about 110 m from the GSM base station ranges from -27 dBm to -50 dBm from the various GSM frequency bands. Additionally, wireless range measurements of the RF harvesters in the industrial, scientific and medical (ISM band 868MHz is presented at indoor conditions.

  1. Development of an S-band high-power pillbox-type RF window

    International Nuclear Information System (INIS)

    Miura, A.; Matsumoto, H.

    1992-01-01

    We report on the development of RF windows used to handle a high transmission power up to 110 MW for the Japan Linear Collider. A detailed simulation on multipactoring has been carried out. The results were compared with cathode-luminescence on the surface of alumina RF windows experimentally observed with power transmission up to 200 MW. (Author) 10 refs., 9 figs

  2. Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

    DEFF Research Database (Denmark)

    Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

    2007-01-01

    due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

  3. Evaluation of a new method of RF power coupling to acceleration cavity of charged particles accelerators

    Directory of Open Access Journals (Sweden)

    A M Poursaleh

    2017-08-01

    Full Text Available In this paper, the feasibility studty of a new method of RF power coupling to acceleration cavity of charged particles accelerator will be evaluated. In this method a slit is created around the accelerator cavity, and RF power amplifier modules is connected directly to the acceleration cavity. In fact, in this design, the cavity in addition to acting as an acceleration cavity, acts as a RF power combiner. The benefits of this method are avoiding the use of RF vacuum tubes, transmission lines, high power combiner and coupler. In this research, cylindrical and coaxial cavities were studied, and a small sample coaxial cavity is build by this method. The results of the resarch showed that compact, economical and safe RF accelerators can be achieved by the proposed method

  4. Study on the RF power necessary to ignite plasma for the ICP test facility at HUST

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Haikun [School of Electronic Information and Communications, Huazhong University of Science and Technology, Wuhan (China); State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China); Li, Dong; Wang, Chenre; Li, Xiaofei; Chen, Dezhi; Liu, Kaifeng; Zhou, Chi; Pan, Ruimin [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China)

    2015-10-15

    An Radio-Frequency (RF) Inductively Coupled Plasma (ICP) ion source test facility has been successfully developed at Huazhong University of Science and Technology (HUST). As part of a study on hydrogen plasma, the influence of three main operation parameters on the RF power necessary to ignite plasma was investigated. At 6 Pa, the RF power necessary to ignite plasma influenced little by the filament heating current from 5 A to 9 A. The RF power necessary to ignite plasma increased rapidly with the operation pressure decreasing from 8 Pa to 4 Pa. The RF power necessary to ignite plasma decreased with the number of coil turns from 6 to 10. During the experiments, plasma was produced with the electron density of the order of 10{sup 16}m{sup -3} and the electron temperature of around 4 eV. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

    KAUST Repository

    Rakia, Tamer

    2015-07-23

    Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

  6. Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

    KAUST Repository

    Rakia, Tamer; Hong-Chuan Yang; Gebali, Fayez; Alouini, Mohamed-Slim

    2015-01-01

    Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

  7. Interplay of the influence of oxygen partial pressure and rf power on ...

    Indian Academy of Sciences (India)

    2017-07-25

    Jul 25, 2017 ... extra heating) and low pressure p = 0.5 mTorr, varying the rf power density between P = 0.57 and 2.83 W cm−2 at different relative oxygen ... thin films are used as window layers in solar cells [1–3]. Sput- tering (especially rf ... defect density [11,12]. In the literature there are works reporting the effect of rf.

  8. Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, O; Hanus, J; Choukourov, A; Kousal, J; SlavInska, D; Biederman, H, E-mail: ondrej.kylian@gmail.co [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Prague 8, 180 00 (Czech Republic)

    2009-07-21

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH{sub 2}/C value of 18% was observed in the N{sub 2}/H{sub 2} discharge, which leads to the surface exhibiting a high rate of protein adsorption. (fast track communication)

  9. Control of hydrocarbon radicals and film deposition by using an RF Whistler wave discharge

    International Nuclear Information System (INIS)

    Mieno, Tetsu; Shoji, Tatsuo; Kadota, Kiyoshi.

    1991-10-01

    Production of hydrocarbon radicals is controlled by using an RF Whistler wave discharge in a low pressure region (∼0.1 Pa). Plasma density of 10 10 - 10 13 cm -3 , electron temperature of 2-20 eV is obtained for the discharge of admixture of Ar and small content of source gases (CH 4 , C 2 H 2 , CO). Spectroscopic measurement indicates that densities of CH and H radicals and deposition rate of amorphous carbon:H film increase with electron density, electron temperature and source gas pressure. The etching effect of H atoms influences on the deposition rate and a high deposition rate (90 μm/hr for CO/Ar discharge) is obtained even in a low neutral pressure discharge. (author)

  10. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  11. Simplified RF power system for Wideroe-type linacs

    International Nuclear Information System (INIS)

    Fugitt, J.; Howard, D.; Crosby, F.; Johnson, R.; Nolan, M.; Yuen, G.

    1981-03-01

    The RF system for the SuperHILAC injector linac was designed and constructed for minimum system complexity, wide dynamic range, and ease of maintenance. The final amplifier is close coupled to the linac and operates in an efficient semilinear mode, eliminating troublesome transmission lines, modulators, and high level regulators. The system has been operated at over 250 kW, 23 MHz with good regulation. The low level RF electronics are contained in a single chassis adjacent to the RF control computer, which monitors all important operating parameters. A unique 360 0 phase and amplitude modular is used for precise control and regulation of the accelerating voltage

  12. Design and development of power supplies for high power IOT based RF amplifier

    International Nuclear Information System (INIS)

    Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

    2013-01-01

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  13. Effect on antenna structure of high power rf during plasma operation

    International Nuclear Information System (INIS)

    Haste, G.R.; Thomas, C.E.; Fadnek, A.; Carter, M.D.; Beaumont, B.; Becoulet, A.; Kuus, H.; Saoutic, B.

    1993-01-01

    High-power, long-pulse operation on the Tore Supra tokamak results in considerable stress on the plasma-facing components. The ICH antennas must deliver high-power rf(up to 4 MW per antenna) in this environment. The antenna structure is therefore subjected to the power flux resulting from the interaction between rf and the edge plasma. The structure's response during operation is described, as is the condition of the antenna after prolonged use

  14. Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

    International Nuclear Information System (INIS)

    Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

    2006-01-01

    Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

  15. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  16. Non-local energy deposition: A problem in regional RF hyperthermia

    International Nuclear Information System (INIS)

    Hagmann, M.J.; Levin, R.L.

    1984-01-01

    As the frequency is decreased below 1 GHz, RF applicators can cause deep heating of tissues. However, there is a concomitant problem in that significant energy deposition may occur well beyond the dimensions of the applicator. The BSD Medical Corporation has described to the authors tests with a phantom manequin in which SAR in the neck was significantly greater than that in the abdomen when an Annular Phased Array System (APAS) was positioned for abdominal heating. The authors have obtained numerical solutions for the SAR distribution in a 180-cell inhomogeneous block model of man subjected to r-f irradiation approximating that emanating from various applicators. The solutions agree with the reports of BSD that significant heating in the neck, inner thighs, and back will occur with an abdominally-placed APAS. They suggest that a similar problem will occur with a helical-coil or other applicator for which the electric field is predominantly parallel to the axis of the body. Typically, 70% or more of the total energy will be deposited outside the bounds of an axial applicator when it is placed around the chest or abdomen. The problem is most severe at frequencies for which body parts such as the arm or head may resonate. In such cases, over 90% of the energy may be deposited outside the bounds of applicator. The problem of non-local energy deposition appears to be substantially reduced for non-axial applicators. If the arm extends outward from the side of the body, an axial applicator around it will cause negligible energy deposition in the rest of the body

  17. Designing of RF ion source and the power sources system

    International Nuclear Information System (INIS)

    Rusdiyanto.

    1978-01-01

    An RF ion source prototype is being developed for the particle accelerator at the Gama Research Centre. Supply of the gas is fed into the plasma chamber by means of neadle valve system. Magnetic field strength of about 500 gauss is applied to the system to improve the ionization efficiency. Components and spare parts of the RF ion source are made based on locally available materials and are discussed in this report. (author)

  18. Optimal conditions for the deposition of novel anticorrosive coatings by RF magnetron sputtering for aluminum alloy AA6082

    International Nuclear Information System (INIS)

    Brachetti-Sibaja, S.B.; Domínguez-Crespo, M.A.; Rodil, S.E.; Torres-Huerta, A.M.

    2014-01-01

    Highlights: • Non-conventional technique for improving the corrosion resistance of aluminum alloys. • Effect of the deposition parameters: power, substrate temperature and deposition time. • Changes in the crystallinity of the coatings are observed with the temperature. • The structure of these coatings is found to be dependent on the nature of the substrate. • La coatings can provide a better physical barrier to inhibit the corrosion attack. - Abstract: Cerium and lanthanum coatings were deposited on glass, silicon (1 0 0), and aluminum alloy by RF magnetron sputtering in which several experimental conditions such as power, substrate temperature, and deposition time were varied, using pure CeO 2 and La 2 O 3 targets. The effect of deposition parameters on the bonding structure, surface morphology and properties against corrosion of rare earth (RE) coatings formed on metallic substrate was reported. The microstructure and chemistry of the thin film were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS); whereas their use as corrosion resistant coatings was studied in aqueous NaCl solution (3.0 wt%) by using polarization curves. Variations in these properties were observed by increasing the substrate temperature which modifies the crystallinity of the rare earth coatings. XRD and XPS findings indicate that the cerium coatings are composed by CeO 2 and a significant quantity of Ce 2 O 3 due to oxygen deficiency in the sputtering chamber, whereas La 2 O 3 /La(OH) 3 and some La intermetallic compounds are detected in the lanthanum films. Variations in the E corr and I corr were found as a function of the thickness, texture, and morphology of the as-prepared coatings

  19. Optical constants of silicon-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.

    2008-01-01

    Deposition of amorphous silicon-like (Si:O x :C y :H z ) thin films in a remote RF hollow cathode discharge plasma using Hexamethyldisoloxane as monomer and Ar as feed gas; has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using optical emission spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy-band gap E g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E g decreases from 3.28 eV to 3.14 eV with power increase from 100 to 300 W, and from 3.54 eV to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES. (author)

  20. RF power source for the compact linear collider test facility (CTF3)

    CERN Document Server

    McMonagle, G; Brown, Peter; Carron, G; Hanni, R; Mourier, J; Rossat, G; Syratchev, I V; Tanner, L; Thorndahl, L

    2004-01-01

    The CERN CTF3 facility will test and demonstrate many vital components of CLIC (Compact Linear Collider). This paper describes the pulsed RF power source at 2998.55 MHz for the drive-beam accelerator (DBA), which produces a beam with an energy of 150 MeV and a current of 3.5 Amps. Where possible, existing equipment from the LEP preinjector, especially the modulators and klystrons, is being used and upgraded to achieve this goal. A high power RF pulse compression system is used at the output of each klystron, which requires sophisticated RF phase programming on the low level side to achieve the required RF pulse. In addition to the 3 GHz system two pulsed RF sources operating at 1.5 GHz are being built. The first is a wide-band, low power, travelling wave tube (TWT) for the subharmonic buncher (SHB) system that produces a train of "phase coded" subpulses as part of the injector scheme. The second is a high power narrow band system to produce 20 MW RF power to the 1.5 GHz RF deflectors in the delay loop situate...

  1. RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

    Science.gov (United States)

    Sahin, Halil Turgut

    2013-01-01

    An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

  2. Overview on thermal and mechanical challenges of high power RF electronic packaging

    NARCIS (Netherlands)

    Yuan, C.A.; Kregting, R.; Driel, W. van; Gielen, A.W.J.; Xiao, A.; Zhang, G.Q.

    2011-01-01

    High Power RF electronics is one of the essential parts for wireless communication, including the personal communication, broadcasting, microwave radar, etc. Moreover, high efficient high power electronics has entered the ISM market, such as the power generator of microwave oven. Power electronics

  3. A low-power RF system with accurate synchronization for a S-band RF-gun using a laser-triggered photocathode

    International Nuclear Information System (INIS)

    Otake, Y.; Naito, T.; Shintake, T.; Takata, K.; Takeuchi, Y.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

    1992-01-01

    An S-band RF-gun using a laser-triggered photocathode and its low-power RF system have been constructed. The main elements of the low-power RF system comprise a 600-W amplifier, an amplitude modulator, a phase detector, a phase shifter and a frequency-divider module. Synchronization between the RF fields for acceleration and the mode-locked laser pulses for beam triggering are among the important points concerning the RF-gun. The frequency divider module which down-converts from 2856 MHz(RF) to 89.25 MHz(laser), and the electrical phase-shifter were specially developed for stable phase control. The phase jitter of the frequency divider should be less than 10 ps to satisfy our present requirements. The first experiments to trigger and accelerate beams with the above-mentioned system were carried out in January, 1992. (Author) 6 figs., 5 refs

  4. Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

    KAUST Repository

    Rakia, Tamer; Yang, Hong-Chuan; Gebali, Fayez; Alouini, Mohamed-Slim

    2016-01-01

    Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non

  5. High-power RF controls for the NBS-Los Alamos racetrack microtron

    International Nuclear Information System (INIS)

    Young, L.M.; Biddl, R.S.

    1985-01-01

    The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kw cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference

  6. Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

    CERN Document Server

    Kerhervé, Eric

    2015-01-01

    This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

  7. Outgassing studies of lower hybrid antenna module during CW high RF power injection

    International Nuclear Information System (INIS)

    Goniche, M.; Brossaud, J.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.; Maebara, S.; Ikeda, Y.; Imai, T.; Nagashima, T.

    1994-01-01

    Outgassing, induced by very long RF waves injection (up to 6000s) at high power density, is studied with a module, able to be used for a lower hybrid frequency antenna. A large outgassing data base is provided by 75 shots cumulating 27 hours of RF injection. Outgassing rate is documented after different thermal pre-treatments, and in various conditions of cooling, RF power level. Relevant parameters are identified and values of outgassing rates are given in order to design pumping system for a large antenna. (author) 4 refs.; 7 figs.; 1 tab

  8. High-power RF cavity R ampersand D for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Rimmer, R.; Lambertson, G.; Hodgson, J.

    1994-06-01

    We describe the development of a high-power test model of the 476 MHz RF cavity for the PEP-II B Factory. This cavity is designed to demonstrate the feasibility of a high-power design with higher-order mode (HOM) damping waveguides and the fabrication technologies involved, and it can also be used to evaluate aperture or loop couplers and various RF windows. Changes to the RF design to reduce peak surface heating are discussed and results of finite-element analyses of temperature and stress are presented. Fabrication methods for the prototype and subsequent production cavities are discussed

  9. Development of a high-power RF cavity for the PEP-II B factory

    International Nuclear Information System (INIS)

    Rimmer, R.A.; Allen, M.A.; Saba, J.; Schwarz, H.

    1995-03-01

    The authors describe the development and fabrication of the first high-power RF cavity for PEP-II. Design choices and fabrication technologies for the first cavity and subsequent production cavities are described. Conditioning and high-power testing of the first and subsequent cavities are discussed, as well as integration of the cavity into modular RF systems for both high-energy and low-energy rings. Plans for installation of the cavity raft assemblies in the RF sections of the PEP tunnel are also considered

  10. Low power rf system for the ALS Linac

    International Nuclear Information System (INIS)

    Lo, C.C.; Taylor, B.; Lancaster, H.

    1991-05-01

    The Linear Accelerator (Linac) in the Advanced Light Source (ALS) is designed to provide either single or multiple bunchers of 50 MeV electrons for the booster synchrotron. Three cavities are used in the Linac for electron bunching. The two subharmonic bunching cavities operate at 124.914 MHz and 499.654 MHz respectively. The S Band buncher operates at 2.997924 GHz. The low level RF system includes a master signal source, RF burst generators, signal phase control, timing trigger generators and a water temperature control system. The design and performance of the system will be described. 7 refs., 3 figs

  11. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  12. Power deposition profile during lower hybrid current drive in Tore Supra

    International Nuclear Information System (INIS)

    Pecquet, A.L.; Moreau, D.; Fall, T.; Lasalle, J.; Lecoustey, P.; Mattioli, M.; Peysson, Y.; Auge, N.; Rodriguez, L.; Talvard, M.; Hubbard, A.; Moret, J.M.

    1991-01-01

    Lower hybrid current drive (LHCD) experiments have been performed in Tore Supra in various density regimes. The total power coupled to the plasma reached 4MW and a strong electron heating has been observed. To investigate the power deposition mechanism on the electrons, r.f power modulation experiments have been performed. These experiments allow us to estimate the power deposition profiles on both thermal and non-thermal electrons and also to study their respective time responses. From these studies it is possible to deduce a thermal heating scenario which agrees with the experimental results

  13. Look at energy compression as an assist for high power rf production

    International Nuclear Information System (INIS)

    Birx, D.L.; Farkas, Z.D.; Wilson, P.B.

    1984-01-01

    The desire to construct electron linacs of higher and higher energies, coupled with the realities of available funding and real estate, has forced machine designers to reassess the limitations in both accelerator gradient (MeV/m) and energy. The gradients achieved in current radio-frequency (RF) linacs are sometimes set by electrical breakdown in the accelerating structure, but are in most cases determined by the RF power level available to drive the linac. In this paper we will not discuss RF power sources in general, but rather take a brief look at several energy compression schemes which might be of service in helping to make better use of the sources we employ. We will, however, diverge for a bit and discuss what the RF power requirements are. 12 references, 21 figures, 3 tables

  14. Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

    CERN Document Server

    Broere, J; Gómez Martínez, Y; Rossi, M

    2011-01-01

    Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

  15. Performance test of lower hybrid waveguide under long/high-RF power transmission

    International Nuclear Information System (INIS)

    Seki, Masami; Obara, Kenjiro; Maebara, Sunao

    1996-06-01

    Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10 -6 -10 -5 Pa m 3 /sec m 2 (10 -9 -10 -8 Torr 1/sec cm 2 ) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H 2 or D 2 gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be ∼100degC by using of water cooling at a power level of 150 MW/m 2 RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10 -7 Pa m 3 /sec m 2 (10 -10 Torr 1/sec cm 2 ). The steady state RF injection was demonstrated with water cooling. (author)

  16. Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

    Science.gov (United States)

    Keyrouz, Shady; Visser, Huib

    2013-12-01

    This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of -10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%.

  17. Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

    International Nuclear Information System (INIS)

    Keyrouz, Shady; Visser, Huib

    2013-01-01

    This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of −10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%

  18. An RF energy harvesting power management circuit for appropriate duty-cycled operation

    Science.gov (United States)

    Shirane, Atsushi; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2015-04-01

    In this study, we present an RF energy harvesting power management unit (PMU) for battery-less wireless sensor devices (WSDs). The proposed PMU realizes a duty-cycled operation that is divided into the energy charging time and discharging time. The proposed PMU detects two types of timing, thus, the appropriate timing for the activation can be recognized. The activation of WSDs at the proper timing leads to energy efficient operation and stable wireless communication. The proposed PMU includes a hysteresis comparator (H-CMP) and an RF signal detector (RF-SD) to detect the timings. The proposed RF-SD can operate without the degradation of charge efficiency by reusing the RF energy harvester (RF-EH) and H-CMP. The PMU fabricated in a 180 nm Si CMOS demonstrated the charge operation using the RF signal at 915 MHz and the two types of timing detection with less than 124 nW in the charge phase. Furthermore, in the active phase, the PMU generates a 0.5 V regulated power supply from the charged energy.

  19. High power tests of X-band RF windows at KEK

    Energy Technology Data Exchange (ETDEWEB)

    Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

    1997-04-01

    Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

  20. Very long pulse high-RF power test of a lower hybrid frequency antenna module

    Energy Technology Data Exchange (ETDEWEB)

    Goniche, M; Brossaud, J; Barral, C; Berger-By, G; Bibet, Ph; Poli, S; Rey, G; Tonon, G [Association Euratom-CEA, Centre d` Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Seki, M; Obara, K [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

    1994-03-01

    Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed {approx} 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs.

  1. RF power sources for 5--15 TeV linear colliders

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1996-09-01

    After outlining the design of the NLC rf system at 1 TeV, the possibility of a leap in linear collider energy into the 5--15 TeV energy range is considered. To keep the active accelerator length and ac wall-plug power within reasonable bounds, higher accelerating gradients at higher rf frequencies will be necessary. Scaling relations are developed for basic rf system parameters as a function of frequency, and some specific parameter examples are given for colliders at 34 Ghz and 91 Ghz. Concepts for rf pulse compression system design and for high power microwave sources at 34 Ghz (for example sheet-beam and multiple-beam klystrons) are briefly discussed

  2. Very long pulse high-RF power test of a lower hybrid frequency antenna module

    International Nuclear Information System (INIS)

    Goniche, M.; Brossaud, J.; Barral, C.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.

    1994-03-01

    Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed ∼ 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs

  3. Traveling wave linear accelerator with RF power flow outside of accelerating cavities

    Science.gov (United States)

    Dolgashev, Valery A.

    2016-06-28

    A high power RF traveling wave accelerator structure includes a symmetric RF feed, an input matching cell coupled to the symmetric RF feed, a sequence of regular accelerating cavities coupled to the input matching cell at an input beam pipe end of the sequence, one or more waveguides parallel to and coupled to the sequence of regular accelerating cavities, an output matching cell coupled to the sequence of regular accelerating cavities at an output beam pipe end of the sequence, and output waveguide circuit or RF loads coupled to the output matching cell. Each of the regular accelerating cavities has a nose cone that cuts off field propagating into the beam pipe and therefore all power flows in a traveling wave along the structure in the waveguide.

  4. Structural and superconducting properties of sputter-deposited niobium films for applications in RF accelerating cavities

    CERN Document Server

    Peck, M A

    2000-01-01

    The present work presents the results of a systematic study of superconducting and structural properties of niobium films sputter deposited onto the inner walls of radiofrequency copper resonators. The measured superconducting quantities include the surface resistance, the critical temperature, the penetration depth and the upper and lower critical fields. In addition to films grown with different discharge gases (Xe, Kr, Ar, Ne and Ar-Ne mixtures) and to films grown on substrates prepared under different conditions, the study also includes massive niobium cavities. The surface resistance is analysed in terms of its dependence on the temperature and on the rf field amplitude and, when possible, compared to theoretical predictions. In general, good agreement with BCS theory is observed. All experimental results are presented in the form of a simple, but adequate parameterisation. The residual resistance is observed to be essentially uncorrelated with the other variables, but strongly dependent on the macroscop...

  5. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    Science.gov (United States)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  6. Morphology, optical and electrical properties of Cu-Ni nanoparticles in a-C:H prepared by co-deposition of RF-sputtering and RF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Ghodselahi, T., E-mail: ghodselahi@ipm.ir [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Vesaghi, M.A. [School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran (Iran, Islamic Republic of); Gelali, A.; Zahrabi, H.; Solaymani, S. [Young Researchers Club, Islamic Azad University, Kermanshah Branch, Kermanshah (Iran, Islamic Republic of)

    2011-11-01

    We report optical and electrical properties of Cu-Ni nanoparticles in hydrogenated amorphous carbon (Cu-Ni NPs - a-C:H) with different surface morphology. Ni NPs with layer thicknesses of 5, 10 and 15 nm over Cu NPs - a-C:H were prepared by co-deposition of RF-sputtering and RF-Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) from acetylene gas and Cu and Ni targets. A nonmetal-metal transition was observed as the thickness of Ni over layer increases. The surface morphology of the sample was described by a two dimensional (2D) Gaussian self-affine fractal, except the sample with 10 nm thickness of Ni over layer, which is in the nonmetal-metal transition region. X-ray diffraction profile indicates that Cu NPs and Ni NPs with fcc crystalline structure are formed in these films. Localized Surface Plasmon Resonance (LSPR) peak of Cu NPs is observed around 600 nm in visible spectra, which is widen and shifted to lower wavelengths as the thickness of Ni over layer increases. The variation of LSPR peak width correlates with conductivity variation of these bilayers. We assign both effects to surface electron delocalization of Cu NPs.

  7. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  8. RF transport

    International Nuclear Information System (INIS)

    Choroba, Stefan

    2013-01-01

    This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

  9. New high power 200 MHz RF system for the LANSCE drift tube linac

    International Nuclear Information System (INIS)

    Lyles, J.; Friedrichs, C.; Lynch, M.

    1998-01-01

    The Los Alamos Neutron Science Center (LANSCE) linac provides an 800 MeV direct H + proton beam, and injects H - to the upgraded proton storage ring for charge accumulation for the Short Pulse Spallation Source. Accelerating these interlaced beams requires high average power from the 201.25 MHz drift tube linac (DTL) RF system. Three power amplifiers have operated at up to three Megawatts with 12% duty factor. The total number of electron power tubes in the RF amplifiers and their modulators has been reduced from fifty-two to twenty-four. The plant continues to utilize the original design of a tetrode driving a super power triode. Further increases in the linac duty factor are limited, in part, by the maximum dissipation ratings of the triodes. A description of the system modifications proposed to overcome these limitations includes new power amplifiers using low-level RF modulation for tank field control. The first high power Diacrode reg-sign is being delivered and a new amplifier cavity is being designed. With only eight power tubes, the new system will deliver both peak power and high duty factor, with lower mains power and cooling requirements. The remaining components needed for the new RF system will be discussed

  10. Performance of RF power and phase control on JT-60 LHRF heating system

    International Nuclear Information System (INIS)

    Fujii, T.; Ikeda, Y.; Imai, T.; Honda, M.; Kiyono, K.; Maebara, S.; Saigusa, M.; Sakamoto, K.; Sawahata, M.; Seki, M.

    1987-01-01

    The performance of RF power and phase control on the JT-60 LHRFD heating system are presented. The JT-60 LHRF heating system has three units of huge RF source with a total output of 24 MW, each unit consisting of eight amplifier chains. A high power klystron generating 1 MW for 10 s at 2 GHz is used in each chain. Automatic gain control is employed to regulate the output power not only against gain fluctuations in the chain but also against the unstable plasma load without any output circulator for the klystron

  11. Feasibility Study for High Power RF – Energy Recovery in Particle Accelerators

    CERN Document Server

    Betz, Michael

    2010-01-01

    When dealing with particle accelerators, especially in systems with travelling wave structures and low beam loading, a substantial amount of RF power is dissipated in 50Ω termination loads. For the Super Proton Synchrotron (SPS) at Cern this is 69 % of the incident RF power or about 1 MW. Different ideas, making use of that otherwise dissipated power, are presented and their feasibility is reviewed. The most feasible one, utilizing an array of semiconductor based RF/DC modules, is used to create a design concept for energy recovery in the SPS. The modules are required to operate at high power, high efficiency and with low harmonic radiation. Besides the actual RF rectifier, they contain additional components to ensure a graceful degradation of the overall system. Different rectifier architectures and semiconductor devices are compared and the most suitable ones are chosen. Two prototype devices were built and operated with up to 400 W of pulsed RF power. Broadband measurements – capturing all harmonics up ...

  12. A brief history of high power RF proton linear accelerators

    International Nuclear Information System (INIS)

    Browne, J.C.

    1996-01-01

    The first mention of linear acceleration was in a paper by G. Ising in 1924 in which he postulated the acceleration of positive ions induced by spark discharges which produced electric fields in gaps between a series of open-quotes drift tubesclose quotes. Ising apparently was not able to demonstrate his concept, most likely due to the limited state of electronic devices. Ising's work was followed by a seminal paper by R. Wideroe in 1928 in which he demonstrated the first linear accelerator. Wideroe was able to accelerate sodium or potassium ions to 50 keV of energy using drift tubes connected alternately to high frequency waves and to ground. Nuclear physics during this period was interested in accelerating protons, deuterons, electrons and alpha particles and not heavy ions like sodium or potassium. To accelerate the light ions required much higher frequencies than available at that time. So linear accelerators were not pursued heavily at that time. Research continued during the 1930s but the development of high frequency RF tubes for radar applications in World War 2 opened the potential for RF linear accelerators after the war. The Berkeley laboratory of E. 0. Lawrence under the leadership of Luis Alvarez developed a new linear proton accelerator concept that utilized drift tubes that required a full RF period to pass through as compared to the earlier concepts. This development resulted in the historic Berkeley 32 MeV proton linear accelerator which incorporated the open-quotes Alvarez drift tubeclose quotes as the basic acceleration scheme using surplus 200 MHz radar components

  13. RF plasma deposition of thin Si{sub x}Ge{sub y}C{sub z}:H films using a combination of organometallic source materials

    Energy Technology Data Exchange (ETDEWEB)

    Rapiejko, C. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)]. E-mail: gazickim@p.lodz.pl; Klimek, L. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Szymanowski, H. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Strojek, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)

    2004-12-22

    Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, m{mu}-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A{sub x}(IV)B{sub y}(IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si{sub x}C{sub y}:H films) or organogermanium compounds (to deposit Ge{sub x}C{sub y}:H films), as source substances. The present paper reports on a RF plasma deposition of a Si{sub x}Ge{sub y}C{sub z}:H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm{sup 3}) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach.

  14. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    International Nuclear Information System (INIS)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L.

    2003-01-01

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

  15. Development and simulation of RF components for high power millimeter wave gyrotrons

    Energy Technology Data Exchange (ETDEWEB)

    Pereyaslavets, M.; Sato, M.; Shimozuma, T.; Takita, Y.; Idei, H.; Kubo, S.; Ohkubo, K.; Hayashi, K.

    1996-11-01

    To test gyrotron RF components, efficient low-power generators for rotating high-order modes of high purity are necessary. Designs of generators for the TE{sub 15,3} mode at 84 GHz and for the TE{sub 31,8} mode at 168 GHz are presented and some preliminary test results are discussed. In addition, Toshiba gyrotron cavities at 168 GHz were analyzed for leakage of RF power in the beam tunnel. To decrease RF power leakage, the declination angle of the cut-off cavity cross section has to be decreased. A TE{sub 15,3} waveguide nonlinear uptaper is analyzed at 84 GHz as well as 168 GHz uptapers. Since the calculated conversion losses are slightly higher than designed value, an optimization of those uptapers may be required. (author)

  16. High power tests of dressed supconducting 1.3 GHz RF cavities

    Energy Technology Data Exchange (ETDEWEB)

    Hocker, A.; Harms, E.R.; Lunin, A.; Sukhanov, A.; /Fermilab

    2011-03-01

    A single-cavity test cryostat is used to conduct pulsed high power RF tests of superconducting 1.3 GHz RF cavities at 2 K. The cavities under test are welded inside individual helium vessels and are outfitted ('dressed') with a fundamental power coupler, higher-order mode couplers, magnetic shielding, a blade tuner, and piezoelectric tuners. The cavity performance is evaluated in terms of accelerating gradient, unloaded quality factor, and field emission, and the functionality of the auxiliary components is verified. Test results from the first set of dressed cavities are presented here.

  17. Study of a power coupler for superconducting RF cavities used in high intensity proton accelerator

    International Nuclear Information System (INIS)

    Souli, M.

    2007-07-01

    The coaxial power coupler needed for superconducting RF cavities used in the high energy section of the EUROTRANS driver should transmit 150 kW (CW operation) RF power to the protons beam. The calculated RF and dielectric losses in the power coupler (inner and outer conductor, RF window) are relatively high. Consequently, it is necessary to design very carefully the cooling circuits in order to remove the generated heat and to ensure stable and reliable operating conditions for the coupler cavity system. After calculating all type of losses in the power coupler, we have designed and validated the inner conductor cooling circuit using numerical simulations results. We have also designed and optimized the outer conductor cooling circuit by establishing its hydraulic and thermal characteristics. Next, an experiment dedicated to study the thermal interaction between the power coupler and the cavity was successfully performed at CRYOHLAB test facility. The critical heat load Qc for which a strong degradation of the cavity RF performance was measured leading to Q c in the range 3 W-5 W. The measured heat load will be considered as an upper limit of the residual heat flux at the outer conductor cold extremity. A dedicated test facility was developed and successfully operated for measuring the performance of the outer conductor heat exchanger using supercritical helium as coolant. The test cell used reproduces the realistic thermal boundary conditions of the power coupler mounted on the cavity in the cryo-module. The first experimental results have confirmed the excellent performance of the tested heat exchanger. The maximum residual heat flux measured was 60 mW for a 127 W thermal load. As the RF losses in the coupler are proportional to the incident RF power, we can deduce that the outer conductor heat exchanger performance is continued up to 800 kW RF power. Heat exchanger thermal conductance has been identified using a 2D axisymmetric thermal model by comparing

  18. Rf system modeling for the high average power FEL at CEBAF

    International Nuclear Information System (INIS)

    Merminga, L.; Fugitt, J.; Neil, G.; Simrock, S.

    1995-01-01

    High beam loading and energy recovery compounded by use of superconducting cavities, which requires tight control of microphonic noise, place stringent constraints on the linac rf system design of the proposed high average power FEL at CEBAF. Longitudinal dynamics imposes off-crest operation, which in turn implies a large tuning angle to minimize power requirements. Amplitude and phase stability requirements are consistent with demonstrated performance at CEBAF. A numerical model of the CEBAF rf control system is presented and the response of the system is examined under large parameter variations, microphonic noise, and beam current fluctuations. Studies of the transient behavior lead to a plausible startup and recovery scenario

  19. Design of resonant converter based DC power supply for RF amplifier

    International Nuclear Information System (INIS)

    Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

    2017-01-01

    ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

  20. Performance test of lower hybrid waveguide under long/high-RF power transmission

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Masami; Obara, Kenjiro; Maebara, Sunao [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

    1996-06-01

    Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10{sup -6}-10{sup -5} Pa m{sup 3}/sec m{sup 2} (10{sup -9}-10{sup -8} Torr 1/sec cm{sup 2}) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H{sub 2} or D{sub 2} gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be {approx}100degC by using of water cooling at a power level of 150 MW/m{sup 2} RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10{sup -7} Pa m{sup 3}/sec m{sup 2} (10{sup -10} Torr 1/sec cm{sup 2}). The steady state RF injection was demonstrated with water cooling. (author).

  1. Solid-state high voltage modulator and its application to rf source high voltage power supplies

    International Nuclear Information System (INIS)

    Tooker, J.F.; Huynh, P.; Street, R.W.

    2009-01-01

    A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

  2. EXCESS RF POWER REQUIRED FOR RF CONTROL OF THE SPALLATION NEUTRON SOURCE (SNS) LINAC, A PULSED HIGH-INTENSITY SUPERCONDUCTING PROTON ACCELERATOR

    International Nuclear Information System (INIS)

    Lynch, M.; Kwon, S.

    2001-01-01

    A high-intensity proton linac, such as that being planned for the SNS, requires accurate RF control of cavity fields for the entire pulse in order to avoid beam spill. The current design requirement for the SNS is RF field stability within ±0.5% and ±0.5 o [1]. This RF control capability is achieved by the control electronics using the excess RF power to correct disturbances. To minimize the initial capital costs, the RF system is designed with 'just enough' RF power. All the usual disturbances exist, such as beam noise, klystron/HVPS noise, coupler imperfections, transport losses, turn-on and turn-off transients, etc. As a superconducting linac, there are added disturbances of large magnitude, including Lorentz detuning and microphonics. The effects of these disturbances and the power required to correct them are estimated, and the result shows that the highest power systems in the SNS have just enough margin, with little or no excess margin

  3. Powering Autonomous Sensors An Integral Approach with Focus on Solar and RF Energy Harvesting

    CERN Document Server

    Penella-López, María Teresa

    2011-01-01

    Autonomous sensors transmit data and power their electronics without using cables. They can be found in e.g. wireless sensor networks (WSNs) or remote acquisition systems. Although primary batteries provide a simple design for powering autonomous sensors, they present several limitations such as limited capacity and power density, and difficulty in predicting their condition and state of charge. An alternative is to extract energy from the ambient (energy harvesting). However, the reduced dimensions of most autonomous sensors lead to a low level of available power from the energy transducer. Thus, efficient methods and circuits to manage and gather the energy are a must. An integral approach for powering autonomous sensors by considering both primary batteries and energy harvesters is presented. Two rather different forms of energy harvesting are also dealt with: optical (or solar) and radiofrequency (RF). Optical energy provides high energy density, especially outdoors, whereas RF remote powering is possibly...

  4. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  5. Power deposition on misaligned edges in COMPASS

    Directory of Open Access Journals (Sweden)

    R. Dejarnac

    2017-08-01

    Full Text Available If the decision is made not to apply a toroidal chamfer to tungsten monoblocks at ITER divertor vertical targets, exposed leading edges will arise as a result of assembly tolerances between adjacent plasma-facing components. Then, the advantage of glancing magnetic field angles for spreading plasma heat flux on top surfaces is lost at the misaligned edges with an interaction occurring at near normal incidence, which can drive melting for the expected inter-ELM heat fluxes. A dedicated experiment has been performed on the COMPASS tokamak to thoroughly study power deposition on misaligned edges using inner-wall limited discharges on a special graphite tile presenting gaps and leading edges directly viewed by a high resolution infra-red camera. The parallel power flux deducted from the unperturbed measurement far from the gap is fully consistent with the observed temperature increase at the leading edge, respecting the power balance. All the power flowing into the gap is deposited at the leading edge and no mitigation factor is required to explain the thermal response. Particle-in-cell simulations show that the ion Larmor smoothing effect is weak and that the power deposition on misaligned edges is well described by the optical approximation because of an electron dominated regime associated with non-ambipolar parallel current flow.

  6. CORPORATE FEED WITH DUAL SEGMENT CIRCULAR POLARIZED ARRAY RECTENNA FOR LOW POWER RF ENERGY HARVESTING

    Directory of Open Access Journals (Sweden)

    CHIA CHAO KANG

    2016-06-01

    Full Text Available This paper focuses on the investigation of the level powers that can be scavenged from the ambient environment by using corporate feed with dual segment circular polarized antenna array . It will converts the received power to direct current (DC. Being a circular polarized antenna, it has higher inductance per unit area, a good Q-factor and compact capability. The design of corporate-series feed rectenna array is to achieve a high gain antenna and maximize the RF energy received by the rectenna system at ultra low power levels. The entire structure was investigated using a combination of harmonic balance nonlinear analysis and full wave electromagnetic field analysis. The results show that 5.0 dBi gain for circular polarized antenna array can be achieved at frequency 956 MHz. When the input power of 20 dBm fed into the transmitting antenna, the maximum distance for radio frequency (RF harvesting is 5.32m. The output DC voltage for various values of incident RF power is also presented. There are noticed reasonable agreements between the simulated and measured result and the works concludes that the investigation of RF energy harvesting system was successful.

  7. The effect of phase difference between powered electrodes on RF plasmas

    International Nuclear Information System (INIS)

    Proschek, M; Yin, Y; Charles, C; Aanesland, A; McKenzie, D R; Bilek, M M; Boswell, R W

    2005-01-01

    This paper presents the results of measurements carried out on plasmas created in five different RF discharge systems. These systems all have two separately powered RF (13.56 MHz) electrodes, but differ in overall size and in the geometry of both vacuum chambers and RF electrodes or antennae. The two power supplies were synchronized with a phase-shift controller. We investigated the influence of the phase difference between the two RF electrodes on plasma parameters and compared the different system geometries. Single Langmuir probes were used to measure the plasma parameters in a region between the electrodes. Floating potential and ion density were affected by the phase difference and we found a strong influence of the system geometry on the observed phase difference dependence. Both ion density and floating potential curves show asymmetries around maxima and minima. These asymmetries can be explained by a phase dependence of the time evolution of the electrode-wall coupling within an RF-cycle resulting from the asymmetric system geometry

  8. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  9. A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications.

    Science.gov (United States)

    Pizzotti, Matteo; Perilli, Luca; Del Prete, Massimo; Fabbri, Davide; Canegallo, Roberto; Dini, Michele; Masotti, Diego; Costanzo, Alessandra; Franchi Scarselli, Eleonora; Romani, Aldo

    2017-07-28

    We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to -17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc.) are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna) and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT). A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

  10. A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications

    Directory of Open Access Journals (Sweden)

    Matteo Pizzotti

    2017-07-01

    Full Text Available We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to −17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc. are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT. A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

  11. Elements of the system for RF power input into linear accelerator-injector for booster

    International Nuclear Information System (INIS)

    Mazurov, E.V.; Mal'tsev, I.G.; Shalashov, I.M.

    1981-01-01

    The elements of the original system for RF power input into 30 MeV linear accelerator-injector for the IHEP proton synchrotron booster are considered. A 3 dB coaxial directional coupler (T-bridge) is describedd. The characteristics of the bridge containing elements and the parameters of ballast matched load are given [ru

  12. High-power rf controls for the NBS-Los Alamos racetrack microtron

    International Nuclear Information System (INIS)

    Young, L.M.; Biddle, R.S.

    1985-01-01

    The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kW cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. A block diagram of this system is shown, as is a subset of the complete system on which the measurements reported in this paper were performed. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference. 4 refs., 8 figs

  13. Fundamental mode rf power dissipated in a waveguide attached to an accelerating cavity

    International Nuclear Information System (INIS)

    Kang, Y.W.

    1993-01-01

    An accelerating RF cavity usually requires accessory devices such as a tuner, a coupler, and a damper to perform properly. Since a device is attached to the wall of the cavity to have certain electrical coupling of the cavity field through the opening. RF power dissipation is involved. In a high power accelerating cavity, the RF power coupled and dissipated in the opening and in the device must be estimated to design a proper cooling system for the device. The single cell cavities of the APS storage ring will use the same accessories. These cavities are rotationally symmetric and the fields around the equator can be approximated with the fields of the cylindrical pillbox cavity. In the following, the coupled and dissipated fundamental mode RF power in a waveguide attached to a pillbox cavity is discussed. The waveguide configurations are (1) aperture-coupled cylindrical waveguide with matched load termination; (2) short-circuited cylindrical waveguide; and (3) E-probe or H-loop coupled coaxial waveguide. A short-circuited, one-wavelength coaxial structure is considered for the fundamental frequency rejection circuit of an H-loop damper

  14. Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

    Science.gov (United States)

    Dogan, Numan S.

    2003-01-01

    The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

  15. HIGH POWER TESTS OF A MULTIMODE X-BAND RF DISTRIBUTION SYSTEMS

    International Nuclear Information System (INIS)

    Tantawi, S

    2004-01-01

    We present a multimode X-band rf pulse compression system suitable for the Next Linear Collider (NLC). The NLC main linacs operate at 11.424 GHz. A single NLC rf unit is required which produce 400 ns pulses with 600 MW of peak power. Each rf unit should power approximately 5 meters of accelerator structures. These rf units consist of two 75 MW klystrons and a dual-moded resonant delay line pulse compression system [1] that produce a flat output pulse. The pulse compression system components are all over moded and most components are design to operate with two modes at the same time. This approach allows increasing the power handling capabilities of the system while maintain a compact inexpensive system. We detail the design of this system and present experimental cold test results. The high power testing of the system is verified using four 50-MW solenoid focused klystrons. These Klystrons should be able to push the system beyond NLC requirements

  16. A highly sensitive RF-to-DC power converter with an extended dynamic range

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

    2017-01-01

    This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross

  17. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  18. High-power RF window design for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Neubauer, M.; Hodgson, J.; Ng, C.; Schwarz, H.; Skarpaas, K.; Kroll, N.; Rimmer, R.

    1994-06-01

    We describe the design of RF windows to transmit up to 500 kW CW to the PEP-II 476 MHz cavities. RF analysis of the windows using high-frequency simulation codes are described. These provide information about the power loss distribution in the ceramic and tim matching properties of the structure. Finite-element analyses of the resulting temperature distribution and thermal stresses are presented. Fabrication methods including a proposed scheme to compensate for thermal expansion s are discussed and hardware tests to validate this approach are described. The effects of surface coatings (intentional and otherwise) and the application of air cooling are considered

  19. A high-power rf linear accelerator for FELS [free-electron lasers

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Watson, J.M.

    1987-01-01

    This paper describes the design of a high average current rf linear accelerator suitable for driving short-wavelength free-electron lasers (FEL). It is concluded that the design of a room-temperature rf linear acelerator that can meet the stringent requirements of a high-power short-wavelength FEL appears possible. The accelerator requires the use of an advanced photoelectric injector that is under development; the accelerator components, however, do not require appreciable development. At these large beam currents, low-frequency, large-bore room-temperature cavities can be highly efficient and give all specified performance with minimal risk. 20 refs

  20. Design of RF energy harvesting platforms for power management unit with start-up circuits

    Science.gov (United States)

    Costanzo, Alessandra; Masotti, Diego

    2013-12-01

    In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

  1. Design of RF energy harvesting platforms for power management unit with start-up circuits

    International Nuclear Information System (INIS)

    Costanzo, Alessandra; Masotti, Diego

    2013-01-01

    In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion

  2. RF-based power distribution system for optogenetic experiments

    Science.gov (United States)

    Filipek, Tomasz A.; Kasprowicz, Grzegorz H.

    2017-08-01

    In this paper, the wireless power distribution system for optogenetic experiment was demonstrated. The design and the analysis of the power transfer system development is described in details. The architecture is outlined in the context of performance requirements that had to be met. We show how to design a wireless power transfer system using resonant coupling circuits which consist of a number of receivers and one transmitter covering the entire cage area with a specific power density. The transmitter design with the full automated protection stage is described with detailed consideration of the specification and the construction of the transmitting loop antenna. In addition, the design of the receiver is described, including simplification of implementation and the minimization of the impact of component tolerances on the performance of the distribution system. The conducted analysis has been confirmed by calculations and measurement results. The presented distribution system was designed to provide 100 mW power supply to each of the ten possible receivers in a limited 490 x 350 mm cage space while using a single transmitter working at the coupling resonant frequency of 27 MHz.

  3. High-power, solid-state rf source for accelerator cavities

    International Nuclear Information System (INIS)

    Vaughan, D.R.; Mols, G.E.; Reid, D.W.; Potter, J.M.

    1985-01-01

    During the past few years the Defense and Electronics Center of Westinghouse Electric Corporation has developed a solid-state, 250-kW peak, rf amplifier for use with the SPS-40 radar system. This system has a pulse length of 60 μs and operates across the frequency band from 400 to 450 MHz. Because of the potential use of such a system as an rf source for accelerator applications, a collaborative experiment was initiated between Los Alamos National Laboratory and Westinghouse to simulate the resonant load conditions of an accelerator cavity. This paper describes the positive results of that experiment as well as the solid-state amplifier architecture. It also explores the future of high-power, solid-state amplifiers as rf sources for accelerator structures

  4. Volterra series based predistortion for broadband RF power amplifiers with memory effects

    Institute of Scientific and Technical Information of China (English)

    Jin Zhe; Song Zhihuan; He Jiaming

    2008-01-01

    RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

  5. High-power RF window and coupler development for the PEP-II B Factory

    International Nuclear Information System (INIS)

    Neubauer, M.; Fant, K.; Hodgson, J.; Judkins, J.; Schwarz, H.; Rimmer, R.A.

    1995-05-01

    We describe the fabrication and testing of the RF windows designed to transmit power to the PEP-II 476 MHz cavities. Design choices to maximize the reliability of the window are discussed. Fabrication technologies for the window are described and finite-element analysis of the assembly process is presented. Conditioning and high-power testing of the window are discussed. Design of the coupler assembly including the integration of the window and other components is reported

  6. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  7. Studies in RF power communication, SAR, and temperature elevation in wireless implantable neural interfaces.

    Directory of Open Access Journals (Sweden)

    Yujuan Zhao

    Full Text Available Implantable neural interfaces are designed to provide a high spatial and temporal precision control signal implementing high degree of freedom real-time prosthetic systems. The development of a Radio Frequency (RF wireless neural interface has the potential to expand the number of applications as well as extend the robustness and longevity compared to wired neural interfaces. However, it is well known that RF signal is absorbed by the body and can result in tissue heating. In this work, numerical studies with analytical validations are performed to provide an assessment of power, heating and specific absorption rate (SAR associated with the wireless RF transmitting within the human head. The receiving antenna on the neural interface is designed with different geometries and modeled at a range of implanted depths within the brain in order to estimate the maximum receiving power without violating SAR and tissue temperature elevation safety regulations. Based on the size of the designed antenna, sets of frequencies between 1 GHz to 4 GHz have been investigated. As expected the simulations demonstrate that longer receiving antennas (dipole and lower working frequencies result in greater power availability prior to violating SAR regulations. For a 15 mm dipole antenna operating at 1.24 GHz on the surface of the brain, 730 uW of power could be harvested at the Federal Communications Commission (FCC SAR violation limit. At approximately 5 cm inside the head, this same antenna would receive 190 uW of power prior to violating SAR regulations. Finally, the 3-D bio-heat simulation results show that for all evaluated antennas and frequency combinations we reach FCC SAR limits well before 1 °C. It is clear that powering neural interfaces via RF is possible, but ultra-low power circuit designs combined with advanced simulation will be required to develop a functional antenna that meets all system requirements.

  8. An RF Power Amplifier in a Digital CMOS Process

    DEFF Research Database (Denmark)

    Nielsen, Per Asbeck; Fallesen, Carsten

    2002-01-01

    A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

  9. Suppressing RF breakdown of powerful backward wave oscillator by field redistribution

    Directory of Open Access Journals (Sweden)

    W. Song

    2012-03-01

    Full Text Available An over mode method for suppressing the RF breakdown on metal surface of resonant reflector cavity in powerful backward wave oscillator is investigated. It is found that the electric field is redistributed and electron emission is restrained with an over longitudinal mode cavity. Compared with the general device, a frequency band of about 5 times wider and a power capacity of at least 1.7 times greater are obtained. The results were verified in an X-band high power microwave generation experiment with the output power near 4 gigawatt.

  10. Wide-Range Adaptive RF-to-DC Power Converter for UHF RFIDs

    KAUST Repository

    Ouda, Mahmoud H.

    2016-07-27

    A wide-range, differential, cross-coupled rectifier is proposed with an extended dynamic range of input RF power that enables wireless powering from varying distances. The proposed architecture mitigates the reverse-leakage problem in conven- tional, cross-coupled rectifiers without degrading sensitivity. A prototype is designed for UHF RFID applications, and is imple- mented using 0.18 μ m CMOS technology. On-chip measurements demonstrate a sensitivity of − 18 dBm for 1 V output over a 100 k Ω load and a peak RF-to-DC power conversion efficiency of 65%. A conventional, fully cross-coupled rectifier is fabricated along- side for comparison and the proposed rectifier shows more than 2 × increase in dynamic range and a 25% boosting in output voltage than the conventional rectifier

  11. RF sputtering deposited a-IGZO films for LCD alignment layer application

    International Nuclear Information System (INIS)

    Wu, G.M.; Liu, C.Y.; Sahoo, A.K.

    2015-01-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  12. RF sputtering deposited a-IGZO films for LCD alignment layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Liu, C.Y.; Sahoo, A.K.

    2015-11-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  13. The UK High Power RF Faraday Partnership Industrial, Academia, and Public Collaboration

    International Nuclear Information System (INIS)

    Phelps, A.D.R.; Carter, R.G.; Clunie, D.; Bowater, S.P.; Ellis, D.; Gamble, D.; Large, T.; Lucas, W.; Pettit, C.; Poole, M. W.; Smith, H.; Smith, P.W.; Wilcox, D.M.

    2003-01-01

    The High Power Radio Frequency (HPRF) Faraday Partnership is a UK technology forum for all users, designers, developers and researchers of RF and microwave devices and systems. High power RF and microwave engineering are key enabling technologies in a wide range of industrial sectors. Formed in October 2001 and funded initially by the UK Department of Trade and Industry and the UK Particle Physics and Astronomy Research Council, the purpose of the HPRF Faraday Partnership is the development of a vibrant research, development and manufacturing base capable of exploiting opportunities in high power radio-frequency engineering. The partnership includes the key UK industrial companies, research laboratories and university research groups. The number of partners is constantly growing and already numbers over thirty. The partnership provides the enabling technology for future high power RF systems and their power supplies through its research programme. It is training people for the sector through PhD studentships and employment as Research Associates. It is planned to develop a Masters Training program. Support and involvement in research for companies in the supply chain is provided through a Partnership Office, a web site and through a range of government funded research schemes. The HPRF Faraday Partnership is seeking to establish more long term international research and development collaborations

  14. Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

    International Nuclear Information System (INIS)

    Oh, Byeong-Yun; Park, Jae-Cheol; Lee, Young-Jun; Cha, Sang-Jun; Kim, Joo-Hyung; Kim, Kwang-Young; Kim, Tae-Won; Heo, Gi-Seok

    2011-01-01

    The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO 3 targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO 3 target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R s ) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: → The compositional dependence of co-sputtered WInZnO film properties is first investigated. → W cations work as oxygen binders in determining the electronic properties. → All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. → W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

  15. A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

    International Nuclear Information System (INIS)

    Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

    1990-01-01

    A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

  16. Performance of the Crowbar of the LHC High Power RF System

    CERN Document Server

    Ravidà, G; Valuch, D

    2012-01-01

    The counter-rotating proton beams in the Large Hadron Collider (LHC) are captured and accelerated to their final energies by two identical 400 MHz Radio Frequency (RF) systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell superconducting (SC) cavity. Each unit of four klystrons is powered by a -100kV/40A AC/DC power converter. A fast protection system (crowbar) protects the four klystrons in each of these units. Although the LHC RF system has shown has very good performance, operational experience has shown that the five-gap double-ended thyratrons used in the crowbar system suffer, from time to time, from auto-firing, which result in beam dumps. This paper presents the recent results obtained with an alternative solution based on solid state thyristors. Comparative measurements with the thyratron are shown.

  17. Low power RF measurements of travelling wave type linear accelerator

    International Nuclear Information System (INIS)

    Reddy, Sivananda; Wanmode, Yashwant; Bhisikar, A.; Shrivastava, Purushottam

    2015-01-01

    RRCAT is engaged in the development of travelling wave (TW) type linear accelerator for irradiation of industrial and agricultural products. TW accelerator designed for 2π/3 mode to operate at frequency of 2856 MHz. It consists of input coupler, buncher cells, regular cells and output coupler. Low power measurement of this structure includes measurement of resonant frequency of the cells for different resonant modes and quality factor, tuning of input-output coupler and measurement of phase advance per cell and electric field in the structure. Steele's non-resonant perturbation technique has been used for measurement of phase advance per cell and electric field in the structure. Kyhl's method has been used for the tuning of input-output coupler. Computer based automated bead pull set-up has been developed for measurement of phase advance per cell and electric field profile in the structure. All the codes are written in Python for interfacing of Vector Network Analyzer (VNA) , stepper motor with computer. These codes also automate the measurement process. This paper describes the test set- up for measurement and results of measurement of travelling wave type linear accelerating structure. (author)

  18. Analysis of RF section of 250 kW CW C-Band high power klystron

    International Nuclear Information System (INIS)

    Badola, Richa; Kaushik, Meenu; Baloda, Suman; Kirti; Vrati; Lamba, O.S.; Joshi, L.M.

    2012-01-01

    Klystron is a microwave tube which is used as a power amplifier in various applications like radar, particle accelerators and thermonuclear reactors. The paper deals with the analysis of RF section of 250 kW CW C band high power klystron for 50 to 60 kV beam voltage The simulation is done using Poisson's superfish and AJ disk software's Design of cavity is done using superfish. The result of superfish is used to decide the dimensions of the geometry of the cavity and AJ disk is used to determined the centre to centre distances between the cavities in order to obtain the desired powers. (author)

  19. Rectifier Design Challenges for RF Wireless Power Transfer and Energy Harvesting Systems

    Directory of Open Access Journals (Sweden)

    A. Collado

    2017-06-01

    Full Text Available The design of wireless power transfer (WPT and energy harvesting (EH solutions poses different challenges towards achieving maximum RF-DC conversion efficiency in these systems. This paper covers several selected challenges when developing WPT and electromagnetic EH solutions, such as the design of multiband and broadband rectifiers, the minimization of the effect that load and input power variations may have on the system performance and finally the most optimum power combining mechanisms that can be used when dealing with multi-element rectifiers.

  20. Two-Way Multiuser Mixed RF/FSO Relaying: Performance Analysis and Power Allocation

    KAUST Repository

    Al-Eryani, Yasser F.

    2018-03-21

    In this paper, the performance of two-way multiuser mixed radio frequency/free space optical (RF/FSO) relay networks with opportunistic user scheduling and asymmetric channel fading is studied. RF links are used to conduct data transmission between users and relay node, while a FSO link is used to conduct data transmission on the last-mile communication link between the relay node and base station. The RF links are assumed to follow a Rayleigh fading model, while the FSO links are assumed to follow a unified Gamma-Gamma atmospheric turbulence fading model with pointing error. First, closed-form expressions for the exact outage probability, asymptotic (high signal-to-noise ratio) outage probability, average symbol error rate, and average ergodic channel capacity are derived assuming a heterodyne detection scheme. The asymptotic results are used to conduct a power optimization algorithm where expressions for optimal transmission power values for the transmitting nodes are provided. Additionally, performance comparisons between the considered two-way-relaying (TWR) network and the oneway- relaying (OWR) network are provided and discussed. Also, the impact of several system parameters, including number of users, pointing errors, atmospheric turbulence conditions, and outage probability threshold on the overall network performance are investigated. All the theoretical results are validated by Monte Carlo simulations. The results show that the TWR scheme almost doubles the network ergodic capacity compared to that of the OWR scheme with the same outage performance. Additionally, it is shown that under weak-to-moderate weather turbulence conditions and small pointing error, the outage probability is dominated by the RF downlink with a neglected effect for the user selection process at the RF uplink transmission. However, for severe pointing error, the outage probability is dominated by the FSO uplink/downlink transmission.

  1. High voltage power supplies for ITER RF heating and current drive systems

    International Nuclear Information System (INIS)

    Gassmann, T.; Arambhadiya, B.; Beaumont, B.; Baruah, U.K.; Bonicelli, T.; Darbos, C.; Purohit, D.; Decamps, H.; Albajar, F.; Gandini, F.; Henderson, M.; Kazarian, F.; Lamalle, P.U.; Omori, T.; Parmar, D.; Patel, A.; Rathi, D.; Singh, N.P.

    2011-01-01

    The RF heating and current drive (H and CD) systems to be installed for the ITER fusion machine are the electron cyclotron (EC), ion cyclotron (IC) and, although not in the first phase of the project, lower hybrid (LH). These systems require high voltage, high current power supplies (HVPS) in CW operation. These HVPS should deliver around 50 MW electrical power to each of the RF H and CD systems with stringent requirements in terms of accuracy, voltage ripple, response time, turn off time and fault energy. The PSM (Pulse Step Modulation) technology has demonstrated over the past 20 years its ability to fulfill these requirements in many industrial facilities and other fusion reactors and has therefore been chosen as reference design for the IC and EC HVPS systems. This paper describes the technical specifications, including interfaces, the resulting constraints on the design, the conceptual design proposed for ITER EC and IC HVPS systems and the current status.

  2. Electron beam gun with kinematic coupling for high power RF vacuum devices

    Science.gov (United States)

    Borchard, Philipp

    2016-11-22

    An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composed of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.

  3. High-power CO laser with RF discharge for isotope separation employing condensation repression

    Science.gov (United States)

    Baranov, I. Ya.; Koptev, A. V.

    2008-10-01

    High-power CO laser can be the effective tool in such applications as isotope separation using the free-jet CRISLA method. The way of transfer from CO small-scale experimental installation to industrial high-power CO lasers is proposed through the use of a low-current radio-frequency (RF) electric discharge in a supersonic stream without an electron gun. The calculation model of scaling CO laser with RF discharge in supersonic stream was developed. The developed model allows to calculate parameters of laser installation and optimize them with the purpose of reception of high efficiency and low cost of installation as a whole. The technical decision of industrial CO laser for isotope separation employing condensation repression is considered. The estimated cost of laser is some hundred thousand dollars USA and small sizes of laser head give possibility to install it in any place.

  4. Design, construction and test of RF solid state power amplifier for IRANCYC-10

    Science.gov (United States)

    Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

    2018-03-01

    In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

  5. Correction of the calculation of beam loading based in the RF power diffusion equation

    International Nuclear Information System (INIS)

    Silva, R. da.

    1980-01-01

    It is described an empirical correction based upon experimental datas of others authors in ORELA, GELINA and SLAC accelerators, to the calculation of the energy loss due to the beam loading effect as stated by the RF power diffusion equation theory an accelerating structure. It is obtained a dependence of this correction with the electron pulse full width half maximum, but independent of the electron energy. (author) [pt

  6. OFDM RF power-fading circumvention for long-reach WDM-PON.

    Science.gov (United States)

    Chow, C W; Yeh, C H; Sung, J Y

    2014-10-06

    We propose and demonstrate an orthogonal frequency division multiplexing (OFDM) radio-frequency (RF) power-fading circumvention scheme for long-reach wavelength-division-multiplexed passive-optical-network (LR-WDM-PON); hence the same capacity of 40 Gb/s can be provided to all the optical-networking-units (ONUs) in the LR-WDM-PON. Numerical analysis and proof-of-concept experiment are performed.

  7. High RF power test of a CFC antenna module for lower hybrid current drive

    International Nuclear Information System (INIS)

    Maebara, S.; Seki, M.; Ikeda, Y.; Kiyono, K.; Suganuma, K.; Imai, T.; Goniche, M.; Bibet, Ph.; Brossaud, J.; Cano, V.; Kazarian-Vibert, F.; Froissard, P.; Rey, G.

    1998-01-01

    A mock-up of a 3.7 GHz Lower Hybrid Current Drive (LHCD) antenna module was fabricated from Carbon Fibre Composite (CFC) for the development of heat resistive low Z front facing the plasma. This 2 divided waveguide module is made from CFC plates and rods which are Cu-plated to reduce the RF losses. The withstand-voltage, the RF properties and the outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. A reference module made from Dispersion Strengthened Copper (DSC) was also fabricated. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns on the CFC module. It was also checked that the highest power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H2 at a pressure of 5 x 10 -2 Pa. During a long pulse, the power reflection coefficient remains low in the 0.8-1.3 % range and no significant change in the reflection coefficient is measured after the thermal cycling provided by the long pulse operation. From thermocouple measurements, RF losses of the copper coated CFC and the DSC modules were compared. No significant differences were measured. From pressure measurements, it was found that the outgassing rate of Cu-plated CFC is about 6-7 times larger than of DSC at 300 deg.C. It is concluded that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (author)

  8. High total dose proton irradiation effects on silicon NPN rf power transistors

    International Nuclear Information System (INIS)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana; Pushpa, N.

    2014-01-01

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods

  9. High total dose proton irradiation effects on silicon NPN rf power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

    2014-04-24

    The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

  10. High power test of RF window and coaxial line in vacuum

    International Nuclear Information System (INIS)

    Sun, D.; Champion, M.; Gormley, M.; Kerns, Q.; Koepke, K.; Moretti, A.

    1993-01-01

    Primary rf input couplers for the superconducting accelerating cavities of the TESLA electron linear accelerator test to be performed at DESY, Hamburg, Germany are under development at both DESY and Fermilab. The input couplers consist of a WR650 waveguide to coaxial line transition with an integral ceramic window, a coaxial connection to the superconducting accelerating cavity with a second ceramic window located at the liquid nitrogen heat intercept location, and bellows on both sides of the cold window to allow for cavity motion during cooldown, coupling adjustments and easier assembly. To permit in situ high peak power processing of the TESLA superconducting accelerating cavities, the input couplers are designed to transmit nominally 1 ms long, 2 MW peak, 1.3 GHz rf pulses from the WR650 waveguide at room temperature to the cavities at 1.8 K. The coaxial part of the Fermilab TESLA input coupler design has been tested up to 1.7 MW using the prototype 805 MHz rf source located at the A0 service building of the Tevatron. The rf source, the testing system and the test results are described

  11. Results of the SLAC LCLS Gun High-Power RF Tests

    International Nuclear Information System (INIS)

    Dowell, D.H.; Jongewaard, E.; Limborg-Deprey, C.; Schmerge, J.F.; Li, Z.; Xiao, L.; Wang, J.; Lewandowski, J.; Vlieks, A.

    2007-01-01

    The beam quality and operational requirements for the Linac Coherent Light Source (LCLS) currently being constructed at SLAC are exceptional, requiring the design of a new RF photocathode gun for the electron source. Based on operational experience at SLAC's GTF and SDL and ATF at BNL as well as other laboratories, the 1.6cell s-band (2856MHz) gun was chosen to be the best electron source for the LCLS, however a significant redesign was necessary to achieve the challenging parameters. Detailed 3-D analysis and design was used to produce near-perfect rotationally symmetric rf fields to achieve the emittance requirement. In addition, the thermo-mechanical design allows the gun to operate at 120Hz and a 140MV/m cathode field, or to an average power dissipation of 4kW. Both average and pulsed heating issues are addressed in the LCLS gun design. The first LCLS gun is now fabricated and has been operated with high-power RF. The results of these high-power tests are presented and discussed

  12. RF MEMS

    Indian Academy of Sciences (India)

    At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

  13. An ultra-low-power RF transceiver for WBANs in medical applications

    International Nuclear Information System (INIS)

    Zhang Qi; Wu Nanjian; Kuang Xiaofei

    2011-01-01

    A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 μm CMOS process. Its core area is 1.6 mm 2 . The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 μA current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

  14. An ultra-low-power RF transceiver for WBANs in medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Qi; Wu Nanjian [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Kuang Xiaofei, E-mail: nanjian@semi.ac.cn [College of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2011-06-15

    A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 {mu}m CMOS process. Its core area is 1.6 mm{sup 2}. The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 {mu}A current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

  15. Effects of rf power on electron density and temperature, neutral temperature, and Te fluctuations in an inductively coupled plasma

    International Nuclear Information System (INIS)

    Camparo, James; Fathi, Gilda

    2009-01-01

    Atomic clocks that fly on global-navigation satellites such as global positioning system (GPS) and Galileo employ light from low-temperature, inductively coupled plasmas (ICPs) for atomic signal generation and detection (i.e., alkali/noble-gas rf-discharge lamps). In this application, the performance of the atomic clock and the capabilities of the navigation system depend sensitively on the stability of the ICP's optical emission. In order to better understand the mechanisms that might lead to instability in these rf-discharge lamps, and hence the satellite atomic clocks, we studied the optical emission from a Rb/Xe ICP as a function of the rf power driving the plasma. Surprisingly, we found that the electron density in the plasma was essentially independent of increases in rf power above its nominal value (i.e., 'rf-power gain') and that the electron temperature was only a slowly varying function of rf-power gain. The primary effect of rf power was to increase the temperature of the neutrals in the plasma, which was manifested by an increase in Rb vapor density. Interestingly, we also found evidence for electron temperature fluctuations (i.e., fluctuations in the plasma's high-energy electron content). The variance of these fluctuations scaled inversely with the plasma's mean electron temperature and was consistent with a simple model that assumed that the total electron density in the discharge was independent of rf power. Taken as a whole, our results indicate that the electrons in alkali/noble-gas ICPs are little affected by slight changes in rf power and that the primary effect of such changes is to heat the plasma's neutral species.

  16. Development and performance test of a new high power RF window in S-band PLS-II LINAC

    Science.gov (United States)

    Hwang, Woon-Ha; Joo, Young-Do; Kim, Seung-Hwan; Choi, Jae-Young; Noh, Sung-Ju; Ryu, Ji-Wan; Cho, Young-Ki

    2017-12-01

    A prototype of RF window was developed in collaboration with the Pohang Accelerator Laboratory (PAL) and domestic companies. High power performance tests of the single RF window were conducted at PAL to verify the operational characteristics for its application in the Pohang Light Source-II (PLS-II) linear accelerator (Linac). The tests were performed in the in-situ facility consisting of a modulator, klystron, waveguide network, vacuum system, cooling system, and RF analyzing equipment. The test results with Stanford linear accelerator energy doubler (SLED) have shown no breakdown up to 75 MW peak power with 4.5 μs RF pulse width at a repetition rate of 10 Hz. The test results with the current operation level of PLS-II Linac confirm that the RF window well satisfies the criteria for PLS-II Linac operation.

  17. Ultracompact Implantable Design With Integrated Wireless Power Transfer and RF Transmission Capabilities.

    Science.gov (United States)

    Sun, Guilin; Muneer, Badar; Li, Ying; Zhu, Qi

    2018-04-01

    This paper presents an ultracompact design of biomedical implantable devices with integrated wireless power transfer (WPT) and RF transmission capabilities for implantable medical applications. By reusing the spiral coil in an implantable device, both RF transmission and WPT are realized without the performance degradation of both functions in ultracompact size. The complete theory of WPT based on magnetic resonant coupling is discussed and the design methodology of an integrated structure is presented in detail, which can guide the design effectively. A system with an external power transmitter and implantable structure is fabricated to validate the proposed approach. The experimental results show that the implantable structure can receive power wirelessly at 39.86 MHz with power transfer efficiency of 47.2% and can also simultaneously radiate at 2.45 GHz with an impedance bandwidth of 10.8% and a gain of -15.71 dBi in the desired direction. Furthermore, sensitivity analyses are carried out with the help of experiment and simulation. The results reveal that the system has strong tolerance to the nonideal conditions. Additionally, the specific absorption rate distribution is evaluated in the light of strict IEEE standards. The results reveal that the implantable structure can receive up to 115 mW power from an external transmitter and radiate 6.4 dB·m of power safely.

  18. Medium and Short Wave RF Energy Harvester for Powering Wireless Sensor Networks.

    Science.gov (United States)

    Leon-Gil, Jesus A; Cortes-Loredo, Agustin; Fabian-Mijangos, Angel; Martinez-Flores, Javier J; Tovar-Padilla, Marco; Cardona-Castro, M Antonia; Morales-Sánchez, Alfredo; Alvarez-Quintana, Jaime

    2018-03-03

    Internet of Things (IoT) is an emerging platform in which every day physical objects provided with unique identifiers are connected to the Internet without requiring human interaction. The possibilities of such a connected world enables new forms of automation to make our lives easier and safer. Evidently, in order to keep billions of these communicating devices powered long-term, a self-sustainable operation is a key point for realization of such a complex network. In this sense, energy-harvesting technologies combined with low power consumption ICs eliminate the need for batteries, removing an obstacle to the success of the IoT. In this work, a Radio Frequency (RF) energy harvester tuned at AM broadcast has been developed for low consumption power devices. The AM signals from ambient are detected via a high-performance antenna-free LC circuit with an efficiency of 3.2%. To maximize energy scavenging, the RF-DC conversion stage is based on a full-wave Cockcroft-Walton voltage multiplier (CWVM) with efficiency up to 90%. System performance is evaluated by rating the maximum power delivered into the load via its output impedance, which is around 62 μW, although power level seems to be low, it is able to power up low consumption devices such as Leds, portable calculators and weather monitoring stations.

  19. High-power rf pulse compression with SLED-II at SLAC

    International Nuclear Information System (INIS)

    Nantista, C.

    1993-04-01

    Increasing the peak rf power available from X-band microwave tubes by means of rf pulse compression is envisioned as a way of achieving the few-hundred-megawatt power levels needed to drive a next-generation linear collider with 50--100 MW klystrons. SLED-II is a method of pulse compression similar in principal to the SLED method currently in use on the SLC and the LEP injector linac. It utilizes low-los resonant delay lines in place of the storage cavities of the latter. This produces the added benefit of a flat-topped output pulse. At SLAC, we have designed and constructed a prototype SLED-II pulse-compression system which operates in the circular TE 01 mode. It includes a circular-guide 3-dB coupler and other novel components. Low-power and initial high-power tests have been made, yielding a peak power multiplication of 4.8 at an efficiency of 40%. The system will be used in providing power for structure tests in the ASTA (Accelerator Structures Test Area) bunker. An upgraded second prototype will have improved efficiency and will serve as a model for the pulse compression system of the NLCTA (Next Linear Collider Test Accelerator)

  20. Suppression of multipacting in high power RF couplers operating with superconducting cavities

    Energy Technology Data Exchange (ETDEWEB)

    Ostroumov, P.N., E-mail: ostroumov@frib.msu.edu [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States); Kazakov, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Morris, D.; Larter, T.; Plastun, A.S.; Popielarski, J.; Wei, J.; Xu, T. [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States)

    2017-06-01

    Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.

  1. Investigations of DC power supplies with optoelectronic transducers and RF energy converters

    Science.gov (United States)

    Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

    2016-04-01

    Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

  2. Transient beam loading and rf power distribution in the SSC [Superconducting Super Collider

    International Nuclear Information System (INIS)

    Raka, E.C.

    1986-01-01

    Transient beam loading will occur in the SSC at injection as the fifteen individual batches from the High Energy Booster are loaded box-car fashion into the main rings. Periodic transient beam loading will be present also at injection due to the gaps between the successive batches as well as the gap that remains to be filled. Even after the rings have been ''filled'' there will remain the abort gap of 3.1 μsec. This can produce significant modulation of the phase and amplitude of the rf voltage seen by those bunches immediately following it unless corrective measures are taken. Two different methods of reducing this modulation will be discussed, each of which put certain requirements on the rf power distribution system

  3. Developments and directions in 200 MHz very high power RF at LAMPF

    International Nuclear Information System (INIS)

    Cliff, R.; Bush, E.D.; DeHaven, R.A.; Harris, H.W.; Parsons, M.

    1991-01-01

    The Los Alamos Meson Physics Facility (LAMPF), is a linear particle accelerator a half-mile long. It produces an 800 million electron- volt hydrogen-ion beam at an average current of more than one milliamp. The first RF section of the accelerator consists of four Alvarez drift-tube structures. Each of these structures is excited by an amplifier module at a frequency of 201.25 MHz. These amplifiers operate at a duty of 13 percent or more and at peak pulsed power levels of about 2.5 million watts. The second RF accelerator section consists of forty-four side-coupled-cavity structures. Each of these is excited by an amplifier module at a frequency of 805 MHz. These amplifiers operate at a duty of up to 12 percent and at peak pulsed power levels of about 1.2 million watts. The relatively high average beam current in the accelerator places a heavy demand upon components in the RF systems. The 201-MHz modules have always required a large share of maintenance efforts. In recent years, the four 201.25 MHz modules have been responsible for more than twice as much accelerator down-time as have the forty-four 805 MHz modules. This paper reviews recent, ongoing, and planned improvements in the 201-MHz systems. The Burle Industries 7835 super power triode is used in the final power amplifiers of each of the 201-MHz modules. This tube has been modified for operation at LAMPF by the addition of Penning ion vacuum''pumps.'' This has enabled more effective tube conditioning and restarting. A calorimetry system of high accuracy is in development to monitor tube plate-power dissipation

  4. RF-plasma vapor deposition of siloxane on paper. Part 2: Chemical evolution of paper surface

    International Nuclear Information System (INIS)

    Sahin, Halil Turgut

    2013-01-01

    Highlights: ► Investigate the detailed RF-cold plasma surface modified paper by XPS and ATR-FTIR. ► Some chemical analysis of RF-cold plasma surface modified paper after RF plasma treatment. ► Identify the connection between RF plasma treatment and the surface chemistry of paper surface. - Abstract: Survey and high-resolution (HR) XPS studies indicate that OMCTSO plasma treatment created a new silicon containing functional groups and changed the hydroxyl content on the surface of paper. Four intense survey XPS spectrum peaks were observed for the OMCTSO plasma treated paper. They were the Si 2p at 100 eV, Si 2s at 160 eV, C 1s at 285 eV, and O 1s at 525 eV for the plasma modified surface. It was realized that the macromolecular chain-breaking mechanisms and plasma-induced etching processes control the number and the availability of OH-functionalities during OMCTSO plasma exposure on paper. The reaction, initiated by these species, depends mainly on the nature of chemicals in the plasma as well as on the energy level of the plasma and the nature of the surface effects in the modification of the paper. The ATR-FTIR spectrum of paper treated with OMCTSO plasma has characteristic absorption bands attributed to the Si-O and Si-O-Si formations on the surface.

  5. Active high-power RF pulse compression using optically switched resonant delay lines

    International Nuclear Information System (INIS)

    Tantawi, S.G.; Ruth, R.D.; Vlieks, A.E.

    1996-11-01

    The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE 01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability

  6. High power RF performance test of an improved SiC load

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, W.H.; Kim, S.H.; Park, Y.J. [Pohang Accelerator Lab., Pohang Inst. of Sceince and Technology, Pohang (KR)] [and others

    1998-11-01

    Two prototypes of SiC loads sustaining a maximum peak power of 50 MW were fabricated by Nihon Koshuha Co. in Japan. The PAL conducted the high power RF performance tests of SiC loads to verify the operation characteristics for the application to the PLS Linac. The in-situ facility for the K 12 module was used for the test, which consists of a modulator and klystron system, waveguide network, vacuum and cooling system, and RF analyzing equipment. As the test results, no breakdown appeared up to 50 MW peak power of 1 {mu}s pulse width at a repetition rate of 50 Hz. However, as the peak power increased above 20 MW at 4 {mu}s with 10 Hz, the breakdown phenomena has been observed. Analysing the test results with the current operation power level of PLS Linac, it is confirmed that the SiC loads well satisfy the criteria of the PLS Linac operation. (author)

  7. Simulation of RF power and multi-cusp magnetic field requirement for H{sup −} ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Manish [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Senecha, V.K., E-mail: kumarvsen@gmail.com [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Kumar, Rajnish; Ghodke, Dharmraj V. [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

    2016-12-01

    A computer simulation study for multi-cusp RF based H{sup −} ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H{sup −} Linac project for SNS applications. The average reaction rates for different reactions responsible for H{sup −} ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H{sup -} ion source for a maximum possible H{sup −} ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H{sup −} ion source like excited hydrogen molecular density, H{sup −} ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H{sup −} ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H{sup −} ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

  8. Battery-Powered RF Pre-Ionization System for the Caltech Magnetohydrodynamically-Driven Jet Experiment: RF Discharge Properties and MHD-Driven Jet Dynamics

    Science.gov (United States)

    Chaplin, Vernon H.

    This thesis describes investigations of two classes of laboratory plasmas with rather different properties: partially ionized low pressure radiofrequency (RF) discharges, and fully ionized high density magnetohydrodynamically (MHD)-driven jets. An RF pre-ionization system was developed to enable neutral gas breakdown at lower pressures and create hotter, faster jets in the Caltech MHD-Driven Jet Experiment. The RF plasma source used a custom pulsed 3 kW 13.56 MHz RF power amplifier that was powered by AA batteries, allowing it to safely float at 4-6 kV with the cathode of the jet experiment. The argon RF discharge equilibrium and transport properties were analyzed, and novel jet dynamics were observed. Although the RF plasma source was conceived as a wave-heated helicon source, scaling measurements and numerical modeling showed that inductive coupling was the dominant energy input mechanism. A one-dimensional time-dependent fluid model was developed to quantitatively explain the expansion of the pre-ionized plasma into the jet experiment chamber. The plasma transitioned from an ionizing phase with depressed neutral emission to a recombining phase with enhanced emission during the course of the experiment, causing fast camera images to be a poor indicator of the density distribution. Under certain conditions, the total visible and infrared brightness and the downstream ion density both increased after the RF power was turned off. The time-dependent emission patterns were used for an indirect measurement of the neutral gas pressure. The low-mass jets formed with the aid of the pre-ionization system were extremely narrow and collimated near the electrodes, with peak density exceeding that of jets created without pre-ionization. The initial neutral gas distribution prior to plasma breakdown was found to be critical in determining the ultimate jet structure. The visible radius of the dense central jet column was several times narrower than the axial current channel

  9. High RF power test of a lower hybrid module mock-up in carbon fiber composite

    International Nuclear Information System (INIS)

    Goniche, M.; Bibet, P.; Brossaud, J.; Cano, V.; Froissard, P.; Kazarian, F.; Rey, G.; Maebara, S.; Kiyono, K.; Seki, M.; Suganuma, K.; Ikeda, Y.; Imai, T.

    1999-02-01

    A mock-up module of a Lower Hybrid Current Drive antenna module of a Carbon Fiber Composite (CFC) was fabricated for the development of heat resistive front facing the plasma. This module is made from CFC plates and rods which are copper coated to reduce the RF losses. The withstand-voltage, the RF properties and outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns. During these tests, the module temperature was increasing from 100-200 deg. C to 400-500 deg. C. It was also checked that high power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H 2 at a pressure of 5 x 10 -2 Pa. No significant change in the reflection coefficient is measured after the long pulse operation. During a long pulse, the power reflection increases during the pulse typically from 0.8% to 1.3%. It is concluded that the outgassing rate of Cu-plated CFC is about 6 times larger than of Dispersion Strengthened Copper (DSC) module at the module temperature of 300 deg. C. No significant increase of the global outgassing of the CFC module was measured after hydrogen pre-filling. After the test, visual inspection revealed that peeling of the copper coating occurred at one end of the module only on a very small area (0.2 cm 2 ). It is assessed that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (authors)

  10. High RF power test of a lower hybrid module mock-up in Carbon Fiber Composite

    International Nuclear Information System (INIS)

    Maebara, Sunao; Kiyono, Kimihiro; Seki, Masami

    1997-11-01

    A mock-up module of a Lower Hybrid Current Drive antenna module of a Carbon Fiber Composite (CFC) was fabricated for the development of heat resistive front facing the plasma. This module is made from CFC plates and rods which are copper coated to reduce the RF losses. The withstand-voltage, the RF properties and outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns. During these tests, the module temperature was increasing from 100-200degC to 400-500degC. It was also checked that high power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H 2 at a pressure of 5 x 10 -2 Pa. No significant change in the reflection coefficient is measured after the long pulse operation. During a long pulse, the power reflection increases during the pulse typically from 0.8 % to 1.3 %. It is concluded that the outgassing rate of Cu-plated CFC is about 6-7 times larger than of Dispersion Strengthened Copper (DSC) module at the module temperature of 300degC. No significant increase of the global outgassing of the CFC module was measured after hydrogen prefilling. After the test, visual inspection revealed that peeling of the copper coating occurred at one end of the module only on a very small area (0.2 cm 2 ). It is assessed that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (author)

  11. Compact high efficiency, light weight 200-800 MHz high power RF source

    International Nuclear Information System (INIS)

    Shrader, M.B.; Preist, D.H.

    1985-01-01

    There has long been a need for a new more efficient less bulky high power RF power source to drive accelerators in the 200 to 800 MHz region. Results on a recent 5-year EIMAC sponsored R and D program which have lead to the introduction of the Klystrode for UHF television and troposcatter applications indicate that at power levels of 1MW or more efficiencies in excess of 75% can be obtained at 450 MHz. Efficiencies of this order coupled with potential size and weight parameters which are a fraction of those of existing high power UHF generators open up new applications which heretofore would have been impractical if not impossible. Measurements at 470 MHz on existing Klystrodes are given. Projected operating conditions for a 1MW 450 MHz Klystrode having an overall length of 60 inches and a total tube, circuit, and magnet weight of 250 pounds is presented

  12. Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

    2017-02-15

    Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

  13. A Self-Powered Hybrid Energy Scavenging System Utilizing RF and Vibration Based Electromagnetic Harvesters

    International Nuclear Information System (INIS)

    Uluşan, H; Gharehbaghi, K; Külah, H; Zorlu, Ö; Muhtaroğlu, A

    2015-01-01

    This study presents a novel hybrid system that combines the power generated simultaneously by a vibration-based Electromagnetic (EM) harvester and a UHF band RF harvester. The novel hybrid scavenger interface uses a power management circuit in 180 nm CMOS technology to step-up and to regulate the combined output. At the first stage of the system, the RF harvester generates positive DC output with a 7-stage threshold compensated rectifier, while the EM harvester generates negative DC output with a self-powered AC/DC negative doubler circuit. At the second stage, the generated voltages are serially added, stepped-up with an on-chip charge pump circuit, and regulated to a typical battery voltage of 3 V. Test results indicate that the hybrid operation enables generation of 9 μW at 3 V output for a wide range of input stimulations, which could not be attained with either harvesting mode by itself. Moreover the hybrid system behaves as a typical battery, and keeps the output voltage stable at 3 V up to 18 μW of output power. The presented system is the first battery-like harvester to our knowledge that generates energy from two independent sources and regulates the output to a stable DC voltage. (paper)

  14. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    International Nuclear Information System (INIS)

    Chen, Zukun

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  15. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zukun [Los Alamos National Laboratory

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  16. ITO films deposited by rf-PERTE on unheated polymer substrates--properties dependence on In-Sn alloy composition

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.

    2004-01-01

    The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20 wt.%. The average thickness of the ITO films is of about 90 nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: an average visible transmittance of 80% and an electrical resistivity of 1.6x10 -3 Ω cm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6x10 -4 Ω cm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility

  17. Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

    DEFF Research Database (Denmark)

    Tsakadze, Erekle; Ostrikov, K.N.; Tsakadze, Z.L.

    2004-01-01

    ) discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral ("pancake") antennas. Relatively deeper rf power deposition...... in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental...

  18. Application of quasi-optical approach to construct RF power supply for TeV linear colliders

    International Nuclear Information System (INIS)

    Saldin, E.L.; Sarantsev, V.P.; Schneidmiller, E.A.; Ulyanov, Yu.N.; Yurkov, M.V.

    1995-01-01

    An idea to use a quasi-optical approach for constructing an RF power supply for TeV linear e + e - colliders is developed. The RF source of the proposed scheme is composed of a large number of low-power RF amplifiers commutated by quasi-optical elements. The RF power of this source is transmitted to the accelerating structure of the collider by means of quasi-optical waveguides and mirrors. Such an approach enables one not only to decrease the required peak RF power by several orders of magnitude with respect to the traditional approach based on standard klystron technique, but also to achieve the required level of reliability, as it is based on well-developed technology of serial microwave devices. To illustrate the proposed scheme, a conceptual project of 2x500 GeV X-band collider is considered. Accelerating structure of the collider is of the standard travelling wave type and the RF source is assumed to be composed of 0.7 MW klystrons. All equipment of such a collider is placed in a tunnel of 12x6 m 2 cross section. It is shown that such a collider may be constructed at the present level of accelerator technique. ((orig.))

  19. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    International Nuclear Information System (INIS)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L; Joshi, L M; Nangru, S C

    2010-01-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  20. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Joshi, L M; Nangru, S C, E-mail: pramod@ipr.res.i [Central Electronics Engineering Research Institute, Pilani, Rajasthan 333 031 (India)

    2010-02-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  1. Design and RF test result of High Power Hybrid Combiner for Helicon Wave Current Drive in KSTAR Plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Park, S. Y.; Kim, H. J.; Wi, H. H.; Wang, S. J.; Kwak, J. G. [NFRI, Daejeon (Korea, Republic of)

    2016-05-15

    200 kW RF power will be injected to plasmas through the traveling wave antenna after combining four klystrons output powers using three hybrid combiners. Each klystron produces 60 kW output at the frequency of 500 MHz. RF power combiners commonly used to divide or combine output powers for various rf and microwave applications. It is divided into several types according to the design type such as Wilkinson combiner, radial and quadrature hybrid combiner. We designed high power hybrid combiners using 6-1/8 inch coaxial line. The power combiner has many advantages such as high isolation, low insertion loss and high power handling capability. In this paper design and rf test results of high power combiners will be described. High power combiners using three coaxial hybrid couplers will be utilized for effectively combining of 500 MHz, 200 kW output powers generated by four klystrons. We have designed, fabricated, and tested a 6-1/8 inch coaxial hybrid combiners at 500 MHz for efficiently off-axis Helicon wave current drive in KSTAR. Simulation and test results of high power coaxial hybrid combiners are good agreement.

  2. RF link for Implanted Medical Devices (IMDs) and Sub-GHz Inductive Power Transmission

    OpenAIRE

    Diet , Antoine; Koulouridis , Satvros; Le Bihan , Yann; Luu , Quang-Trung; Meyer , Olivier; Pichon , Lionel; Biancheri-Astier , Marc

    2017-01-01

    International audience; Ce travail s'inscrit dan sune etude exploratoire sur les possibilités de télé-alimentation RF des implants médicaux et/ou de communication entre eux. En effet, la durée de fonctionnement de certains implants avec batterie rend leur utilisation critique car il ne faut pas privilégier une intervention chirurgicale lourde s'il est possible d'agir de manière non-invasive. La transmission d'énergie sans fil ou WPT (Wireless Power Transfer) est au cœur de nombreuses autres t...

  3. Effect of RF Interference on the Security-Reliability Trade-off Analysis of Multiuser Mixed RF/FSO Relay Networks with Power Allocation

    KAUST Repository

    Abd El-Malek, Ahmed

    2017-03-27

    In this paper, the impact of radio frequency (RF) cochannel interference (CCI) on the performance of multiuser mixed RF/free-space optical (FSO) relay network with opportunistic user scheduling under eavesdropping attack is studied. The considered system includes multiple users, one decode-and-forward relay, one destination, and an eavesdropper. In the analysis, the RF/FSO channels follow Nakagami-m/Gamma-Gamma fading models, respectively, with pointing errors on the FSO link. Exact closed-form expression for the system outage probability is derived. Then, an asymptotic expression for the outage probability is obtained at the high signal-to-interference-plus-noise ratio regime to get more insights on the system performance. Moreover, the obtained results are used to find the optimal transmission power in different turbulence conditions. The secrecy performance is studied in the presence of CCI at both the authorized relay and eavesdropper, where closed-form expressions are derived for the intercept probability. The physical layer security performance is enhanced using cooperative jamming models, where new closed-form expressions are derived for the intercept probability. Another power allocation optimization problem is formulated to find the optimal transmission and jamming powers. The derived analytical formulas are supported by numerical results to clarify the main contributions of this paper.

  4. Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad; Salhab, Anas M.; Zummo, Salam A.; Alouini, Mohamed-Slim

    2018-01-01

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\access point (AP) and multiple VLC\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  5. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  6. Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad

    2018-01-15

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\\\access point (AP) and multiple VLC\\\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  7. A highly sensitive RF-to-DC power converter with an extended dynamic range

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed

    2017-10-24

    This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross-coupled rectifier, the proposed design offers 3.2× the dynamic range. It is also highly sensitive and requires −18 dBm of input power to produce a 1 V-output voltage when operating with a 100 kΩ load. Furthermore, the proposed design offers an open circuit sensitivity of −23.4 dBm and a peak power conversion efficiency of 67%.

  8. AN ALTERNATIVE APPROACH TO LOW FREQUENCY RF ACCELERATORS AND POWER SOURCES

    International Nuclear Information System (INIS)

    ZHAO, Y.

    2001-01-01

    The Muon Collider and Neutrino Factory projects require low frequency rf cavities because the size and emittance of the muon beam is much larger than is usual for electron or proton beams. The range of 30 MHz to 200 MHz is of special interest. However, the size of an accelerator with low frequency will be impractically large if it is simply scaled up from usual designs. In addition, to get very high peak power in this range is difficult. Presented in this paper is an alternative structure that employs a quasi-lumped inductance that can significantly reduce the transverse size while keeping high gradient. Also addressed is a power compression scheme with a thyratron. This gives a possible solution to provide very high peak power

  9. Power deposition for ion cyclotron heating in large tokamaks

    International Nuclear Information System (INIS)

    Hellsten, T.; Villard, L.

    1988-01-01

    The power deposition profiles during minority ion cyclotron heating are analysed in large tokamaks by using the global, toroidal wave code LION. For tokamaks with large aspect ratio and with circular cross-section, the wave is focused on the magnetic axis and can be absorbed there by cyclotron absorption when the cyclotron resonance passes through the magnetic axis. The power deposition profile is then essentially determined by the Doppler broadening of the ion cyclotron resonance. For equilibria either non-circular or with a small aspect ratio the power deposition profile depends also on the strength of the damping. In this case the power deposition profile can be expressed as a sum of two power deposition profiles. One is related to the power absorbed in a single pass, and its shape is similar to that obtained for large aspect ratio and circular cross-section. The other profile is obtained by calculating the power deposition in the limit of weak damping, in which case the wave electric field is almost constant along the cyclotron resonance layer. A heuristic formula for the power deposition is given. The formula includes a number of calibration curves and functions which has been calculated with the LION code for JET relevant equilibria. The formula enables calculation of the power deposition profile in a simple way when the launched wave spectrum and damping coefficients are known. (author). 7 refs, 11 figs

  10. RF power absorption by plasma of low pressure low power inductive discharge located in the external magnetic field

    Science.gov (United States)

    Kralkina, E. A.; Rukhadze, A. A.; Nekliudova, P. A.; Pavlov, V. B.; Petrov, A. K.; Vavilin, K. V.

    2018-03-01

    Present paper is aimed to reveal experimentally and theoretically the influence of magnetic field strength, antenna shape, pressure, operating frequency and geometrical size of plasma sources on the ability of plasma to absorb the RF power characterized by the equivalent plasma resistance for the case of low pressure RF inductive discharge located in the external magnetic field. The distinguishing feature of the present paper is the consideration of the antennas that generate not only current but charge on the external surface of plasma sources. It is shown that in the limited plasma source two linked waves can be excited. In case of antennas generating only azimuthal current the waves can be attributed as helicon and TG waves. In the case of an antenna with the longitudinal current there is a surface charge on the side surface of the plasma source, which gives rise to a significant increase of the longitudinal and radial components of the RF electric field as compared with the case of the azimuthal antenna current.

  11. DC switch power supply for vacuum-arc coatings deposition

    International Nuclear Information System (INIS)

    Zalesskij, D.Yu.; Volkov, Yu.Ya.; Vasil'ev, V.V.; Kozhushko, V.V.; Luchaninov, A.A.; Strel'nitskij, V.E.

    2008-01-01

    Special DC Switch Power Supply for vacuum-arc deposition was developed and tested in the mode of depositing Al and AlN films. Maximum output power was 6 kW, maximum output current - 120 A, open-circuit voltage - 150 V. The Power Supply allows to adjust and stabilize output current in a wide range. Testing of the Power Supply revealed an advantages over the standard 'Bulat-6' power supply, especially for deposition of non-conductive AlN films.

  12. ICRF power deposition profile and determination of the electron thermal diffusivity by modulation experiments in JET

    International Nuclear Information System (INIS)

    Gambier, D.J.; Evrard, M.P.; Adam, J.

    1990-01-01

    The power deposition profile in the ion cyclotron range of frequencies (ICRF) has been investigated experimentally in JET by means of a square wave modulated RF perturbation. The study has been conducted in D(H) and D( 3 He) plasmas for two heating scenarios. In D( 3 He) plasmas and for central heating in a scenario where mode conversion to Bernstein waves is accessible, the direct power deposition profile on electrons has been derived. It accounts for 15% of the total coupled power and extends over 25% of the minor radius. Outside the RF power deposition zone, the electron thermal diffusivity χ e inside the inversion radius surface (r i ) can be estimated through observation of the diffusive electronic transport. In discharges without monster sawteeth and for a low central temperature gradient (∇T e (r ≤ r i ) ≤ ∇T e (r ≥ r i ) approx. = 5 keV·m -1 ) the value obtained is small (approx. =0.24 +- 0.05 m 2 · s -1 ), typically ten times lower than χ e values deduced from heat pulse propagation in similar discharges at radii larger than the inversion radius. For the D(H) minority heating scheme, a large fraction of the ICRF modulated power is absorbed by minority ions, and the minority tail is modulated with a characteristic ion-electron (i-e) slowing-down time. In this scheme, electron heating occurs only through collisions with the minority ion tail and no modulation of the electron temperature is observed in sawtoothing discharges. This is interpreted as a consequence of the long i-e equipartition time, acting as an integrator for the modulated ICRF signal. Finally, a correlation between the time of the sawtooth crash and the periodic turn-off of the ICRF power is found and its consequence for modulation experiments is reviewed. (author). 22 refs, 16 figs

  13. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    OpenAIRE

    Weinberger, Oliver; Winter, Lukas; Dieringer, Matthias A.; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M.; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    INTRODUCTION: The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. METHODS: Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each...

  14. Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

    Science.gov (United States)

    Thakur, S. K.; Kumar, Y.

    2018-05-01

    This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

  15. Design of power supply system for the prototype RF-driven negative ion source for neutral beam injection application

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Caichao; Hu, Chundong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate school, University of Science and Technology of China, Hefei 230026 (China); Wei, Jianglong, E-mail: jlwei@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xie, Yahong; Xu, Yongjian; Liang, Lizhen; Chen, Shiyong; Liu, Sheng; Liu, Zhimin; Xie, Yuanlai [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)

    2017-04-15

    Highlights: • A supporting power supply system was designed in details for a RF-driven prototype negative ion source at ASIPP. • The RF power supply for plasma generation adopts an all-solid-state power supply structure. • The extraction grid power supply adopts the pulse step modulator (PSM) technology. - Abstract: In order to study the generation and extraction of negative ions for neutral beam injection application, a prototype RF-driven negative ion source and the corresponding test bed are under construction at Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP). The target of the negative ion source is extracting a negation ion beam of 350 A/m{sup 2} for 3600 s plasma duration and 100 s beam duration. According to the required parameters of test bed, the design of power supply system is put forward for earlier study. In this paper, the performance requirements and design schemes of RF power supply for plasma generation, impedance matching network, bias voltage power supply, and extraction voltage power supply for negative beam extraction are introduced in details. The schemes provide a reference for the construction of power supply system and lay a foundation for the next phase of experimental operation.

  16. Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

    2013-01-01

    A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

  17. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  18. Operational performance and improvements to the rf power sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    CERN Document Server

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5 GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

  19. Can we estimate the cellular phone RF peak output power with a simple experiment?

    Science.gov (United States)

    Fioreze, Maycon; dos Santos Junior, Sauli; Goncalves Hönnicke, Marcelo

    2016-07-01

    Cellular phones are becoming increasingly useful tools for students. Since cell phones operate in the microwave bandwidth, they can be used to motivate students to demonstrate and better understand the properties of electromagnetic waves. However, since these waves operate at higher frequencies (L-band, from 800 MHz to 2 GHz) it is not simple to detect them. Usually, expensive real-time high frequency oscilloscopes are required. Indirect measurements are also possible through heat-based and diode-detector-based radio-frequency (RF) power sensors. Another didactic and intuitive way is to explore a simple and inexpensive detection system, based on the interference effect caused in the electronic circuit of TV and PC soundspeakers, and to try to investigate different properties of the cell phones’ RF electromagnetic waves, such as its power and modulated frequency. This manuscript proposes a trial to quantify these measurements, based on a simple Friis equation model and the time constant of the circuit used in the detection system, in order to show it didactically to the students and even allow them also to explore such a simple detection system at home.

  20. The drive beam pulse compression system for the CLIC RF power source

    CERN Document Server

    Corsini, R

    1999-01-01

    The Compact LInear Collider (CLIC) is a high energy (0.5 to 5 TeV) e ± linear collider that uses a high- current electron beam (the drive beam) for 30 GHz RF power production by the Two-Beam Acceleration (TBA) method. Recently, a new cost­effective and efficient generation scheme for the drive beam has been developed. A fully­loaded normal­conducting linac operating at lower frequency (937 MHz) generates and accelerates the drive beam bunches, and a compression system composed of a delay­line and two combiner rings produces the proper drive beam time structure for RF power generation in the drive beam decelerator. In this paper, a preliminary design of the whole compression system is presented. In particular, the fundamental issue of preserving the bunch quality along the complex is studied and its impact on the beam parameters and on the various system components is assessed. A first design of the rings and delay­line lattice, including path length tuning chicanes, injection and extraction regions is a...

  1. Can we estimate the cellular phone RF peak output power with a simple experiment?

    International Nuclear Information System (INIS)

    Fioreze, Maycon; Hönnicke, Marcelo Goncalves; Dos Santos Junior, Sauli

    2016-01-01

    Cellular phones are becoming increasingly useful tools for students. Since cell phones operate in the microwave bandwidth, they can be used to motivate students to demonstrate and better understand the properties of electromagnetic waves. However, since these waves operate at higher frequencies (L-band, from 800 MHz to 2 GHz) it is not simple to detect them. Usually, expensive real-time high frequency oscilloscopes are required. Indirect measurements are also possible through heat-based and diode-detector-based radio-frequency (RF) power sensors. Another didactic and intuitive way is to explore a simple and inexpensive detection system, based on the interference effect caused in the electronic circuit of TV and PC soundspeakers, and to try to investigate different properties of the cell phones’ RF electromagnetic waves, such as its power and modulated frequency. This manuscript proposes a trial to quantify these measurements, based on a simple Friis equation model and the time constant of the circuit used in the detection system, in order to show it didactically to the students and even allow them also to explore such a simple detection system at home. (paper)

  2. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  3. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  4. In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Aryal

    2012-01-01

    Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

  5. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    Science.gov (United States)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  6. Role of chlorine in the nanocrystalline silicon film formation by rf plasma-enhanced chemical vapor deposition of chlorinated materials

    International Nuclear Information System (INIS)

    Shirai, Hajime

    2004-01-01

    We demonstrate the disorder-induced low-temperature crystallization in the nanocrystalline silicon film growth by rf plasma-enhanced chemical vapor deposition of H 2 -diluted SiH 2 Cl 2 and SiCl 4 . The combination of the chemical reactivity of SiCld (d: dangling bond) and SiHCl complexes and the release of the disorder-induced stress near the growing surface tightly correlate with the phase transitionity of SiCld and SiHCl complexes near the growing surface with the aid of atomic hydrogen, which induce higher degree of disorder in the a-Si network. These features are most prominent in the SiCl 4 compared with those of SiH 2 Cl 2 and SiH 4 , which preferentially enhance the nanocrystalline Si formation

  7. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Science.gov (United States)

    Al-Mansoori, Muntaser; Al-Shaibani, Sahar; Al-Jaeedi, Ahlam; Lee, Jisung; Choi, Daniel; Hasoon, Falah S.

    2017-12-01

    Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  8. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Directory of Open Access Journals (Sweden)

    Muntaser Al-Mansoori

    2017-12-01

    Full Text Available Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2. The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF-sputtering system on the growth of intrinsic SnO2 (i-SnO2 layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  9. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    International Nuclear Information System (INIS)

    Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

    2013-01-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  10. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    Science.gov (United States)

    Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

    2013-06-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  11. Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

    International Nuclear Information System (INIS)

    Bargallo, E.; Giralt, A.; Martinez, G.; Weber, M.; Regidor, D.; Arroyo, J.M.; Abal, J.; Dies, J.; Tapia, C.; De Blas, A.; Mendez, P.; Ibarra, A.; Molla, J.

    2013-01-01

    Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives

  12. Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Bargallo, E., E-mail: enric.bargallo-font@upc.edu [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Giralt, A.; Martinez, G. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Weber, M.; Regidor, D.; Arroyo, J.M. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain); Abal, J.; Dies, J.; Tapia, C.; De Blas, A. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Mendez, P.; Ibarra, A.; Molla, J. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain)

    2013-10-15

    Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives.

  13. Nonlinear plasma experiments in geospace with gigawatts of RF power at HAARP

    Energy Technology Data Exchange (ETDEWEB)

    Sheerin, J. P., E-mail: jsheerin@emich.edu [Physics and Astronomy, Eastern Michigan Univ., Ypsilanti, MI 48197 (United States); Cohen, Morris B., E-mail: mcohen@gatech.edu [Electrical and Computer Engineering, Georgia Tech, Atlanta, GA 30332-0250 (United States)

    2015-12-10

    The ionosphere is the ionized uppermost layer of our atmosphere (from 70 – 500 km altitude) where free electron densities yield peak critical frequencies in the HF (3 – 30 MHz) range. The ionosphere thus provides a quiescent plasma target, stable on timescales of minutes, for a whole host of active plasma experiments. High power RF experiments on ionospheric plasma conducted in the U.S. have been reported since 1970. The largest HF transmitter built to date is the HAARP phased-array HF transmitter near Gakona, Alaska which can deliver up to 3.6 Gigawatts (ERP) of CW RF power in the range of 2.8 – 10 MHz to the ionosphere with microsecond pointing, power modulation, and frequency agility. With an ionospheric background thermal energy in the range of only 0.1 eV, this amount of power gives access to the highest regimes of the nonlinearity (RF intensity to thermal pressure) ratio. HAARP’s unique features have enabled the conduct of a number of unique nonlinear plasma experiments in the interaction region of overdense ionospheric plasma including generation of artificial aurorae, artificial ionization layers, VLF wave-particle interactions in the magnetosphere, parametric instabilities, stimulated electromagnetic emissions (SEE), strong Langmuir turbulence (SLT) and suprathermal electron acceleration. Diagnostics include the Modular UHF Ionospheric Radar (MUIR) sited at HAARP, the SuperDARN-Kodiak HF radar, spacecraft radio beacons, HF receivers to record stimulated electromagnetic emissions (SEE) and telescopes and cameras for optical emissions. We report on short timescale ponderomotive overshoot effects, artificial field-aligned irregularities (AFAI), the aspect angle dependence of the intensity of the HF-enhanced plasma line, and production of suprathermal electrons. One of the primary missions of HAARP, has been the generation of ELF (300 – 3000 Hz) and VLF (3 – 30 kHz) radio waves which are guided to global distances in the Earth

  14. Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

    International Nuclear Information System (INIS)

    Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

    1996-01-01

    Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

  15. High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

    International Nuclear Information System (INIS)

    Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

    1991-01-01

    Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

  16. RF magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

    Directory of Open Access Journals (Sweden)

    K.A. Prosolov

    2017-09-01

    Full Text Available Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate, sintered at different mass % ratios. According to Raman scattering and X-ray diffraction data, the deposited hydroxyapatite coatings have a disordered structure. High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one. A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes. It was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.

  17. Asymmetric focusing study from twin input power couplers using realistic rf cavity field maps

    Directory of Open Access Journals (Sweden)

    Colwyn Gulliford

    2011-03-01

    Full Text Available Advanced simulation codes now exist that can self-consistently solve Maxwell’s equations for the combined system of an rf cavity and a beam bunch. While these simulations are important for a complete understanding of the beam dynamics in rf cavities, they require significant time and computing power. These techniques are therefore not readily included in real time simulations useful to the beam physicist during beam operations. Thus, there exists a need for a simplified algorithm which simulates realistic cavity fields significantly faster than self-consistent codes, while still incorporating enough of the necessary physics to ensure accurate beam dynamics computation. To this end, we establish a procedure for producing realistic field maps using lossless cavity eigenmode field solvers. This algorithm incorporates all relevant cavity design and operating parameters, including beam loading from a nonrelativistic beam. The algorithm is then used to investigate the asymmetric quadrupolelike focusing produced by the input couplers of the Cornell ERL injector cavity for a variety of beam and operating parameters.

  18. Joint Optimization of Power Allocation and Load Balancing for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad

    2018-04-18

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF access point (AP) and multiple VLC APs. An iterative algorithm is proposed to distribute users on APs and distribute the powers of the APs on their users. In the PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for total achievable data rate maximization. In this subproblem, we propose a new efficient algorithm that finds optimal dual variables after formulating them in terms of each other. This new algorithm provides faster convergence and better performance than the traditional subgradient method. In addition, it does not depend on the step size or the initial values of the variables, which we look for, as the subgradient does. Then, we start with the user of the minimum data rate seeking another AP that offers a higher data rate for that user. Users with lower data rates continue reconnecting from one AP to another to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. Two approaches are proposed to have the joint PA and LB performed: a main approach that considers the exact interference information for all users, and a suboptimal approach that aims to decrease the complexity of the first approach by considering only the approximate interference information of users. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  19. Joint Optimization of Power Allocation and Load Balancing for Hybrid VLC/RF Networks

    KAUST Repository

    Obeed, Mohanad; Salhab, Anas; Zummo, Salam A.; Alouini, Mohamed-Slim

    2018-01-01

    In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF access point (AP) and multiple VLC APs. An iterative algorithm is proposed to distribute users on APs and distribute the powers of the APs on their users. In the PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for total achievable data rate maximization. In this subproblem, we propose a new efficient algorithm that finds optimal dual variables after formulating them in terms of each other. This new algorithm provides faster convergence and better performance than the traditional subgradient method. In addition, it does not depend on the step size or the initial values of the variables, which we look for, as the subgradient does. Then, we start with the user of the minimum data rate seeking another AP that offers a higher data rate for that user. Users with lower data rates continue reconnecting from one AP to another to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. Two approaches are proposed to have the joint PA and LB performed: a main approach that considers the exact interference information for all users, and a suboptimal approach that aims to decrease the complexity of the first approach by considering only the approximate interference information of users. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

  20. ADX: a high field, high power density, advanced divertor and RF tokamak

    Science.gov (United States)

    LaBombard, B.; Marmar, E.; Irby, J.; Terry, J. L.; Vieira, R.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; Baek, S.; Beck, W.; Bonoli, P.; Brunner, D.; Doody, J.; Ellis, R.; Ernst, D.; Fiore, C.; Freidberg, J. P.; Golfinopoulos, T.; Granetz, R.; Greenwald, M.; Hartwig, Z. S.; Hubbard, A.; Hughes, J. W.; Hutchinson, I. H.; Kessel, C.; Kotschenreuther, M.; Leccacorvi, R.; Lin, Y.; Lipschultz, B.; Mahajan, S.; Minervini, J.; Mumgaard, R.; Nygren, R.; Parker, R.; Poli, F.; Porkolab, M.; Reinke, M. L.; Rice, J.; Rognlien, T.; Rowan, W.; Shiraiwa, S.; Terry, D.; Theiler, C.; Titus, P.; Umansky, M.; Valanju, P.; Walk, J.; White, A.; Wilson, J. R.; Wright, G.; Zweben, S. J.

    2015-05-01

    The MIT Plasma Science and Fusion Center and collaborators are proposing a high-performance Advanced Divertor and RF tokamak eXperiment (ADX)—a tokamak specifically designed to address critical gaps in the world fusion research programme on the pathway to next-step devices: fusion nuclear science facility (FNSF), fusion pilot plant (FPP) and/or demonstration power plant (DEMO). This high-field (⩾6.5 T, 1.5 MA), high power density facility (P/S ˜ 1.5 MW m-2) will test innovative divertor ideas, including an ‘X-point target divertor’ concept, at the required performance parameters—reactor-level boundary plasma pressures, magnetic field strengths and parallel heat flux densities entering into the divertor region—while simultaneously producing high-performance core plasma conditions that are prototypical of a reactor: equilibrated and strongly coupled electrons and ions, regimes with low or no torque, and no fuelling from external heating and current drive systems. Equally important, the experimental platform will test innovative concepts for lower hybrid current drive and ion cyclotron range of frequency actuators with the unprecedented ability to deploy launch structures both on the low-magnetic-field side and the high-magnetic-field side—the latter being a location where energetic plasma-material interactions can be controlled and favourable RF wave physics leads to efficient current drive, current profile control, heating and flow drive. This triple combination—advanced divertors, advanced RF actuators, reactor-prototypical core plasma conditions—will enable ADX to explore enhanced core confinement physics, such as made possible by reversed central shear, using only the types of external drive systems that are considered viable for a fusion power plant. Such an integrated demonstration of high-performance core-divertor operation with steady-state sustainment would pave the way towards an attractive pilot plant, as envisioned in the ARC concept

  1. Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

    OpenAIRE

    McMonagle, Gerard

    2006-01-01

    The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses ...

  2. Design of a high-power test model of the PEP-II rf cavity

    International Nuclear Information System (INIS)

    Schwarz, H.D.; Bell, R.A.; Hodgson, J.A.

    1993-05-01

    The design of a normal-conducting high-power test cavity (HPTC) for PEP-II is described. The cavity includes HOM loading waveguides and provisions for testing two alternate input coupling schemes. 3-D electromagnetic field simulations provided input information for the surface power deposition. Finite element codes were utilized for thermal and stress analyses of the cavity to arrive at a suitable mechanical design capable of handling the high power dissipation. The mechanical design approach with emphasis on the cooling channel layout and mechanical stress reduction is described

  3. Morphology and life-time investigations of dry-lubricating MoS2 films deposited by RF-sputtering

    International Nuclear Information System (INIS)

    Menoud, C.; Kocher, H.; Hinterman, H.E.

    1985-01-01

    Morphology and life-time investigations in vacuum, dry and humid air, of thin, dry-lubricating MoS 2 -films, deposited by rf-sputtering, are reported, using scanning electron microscopical analysis (SEM) and pin on disc friction measurements. Beyond a certain relative humidity the life-time decreases rapidly by about two orders of magnitude, and the coefficient of friction increases from 0.02 to 0.04 in vacuum to 0.20 to 0.30 in humid air. Considering these changes, the useful life-time of a coating was defined as the number of revolutions at a given radius till the coefficient of friction reaches a value of 0.4. Life-time studies were also conducted with Rhodium interlayers and other substrate and pin materials. With the above life-time criterion and the selected pin-on-disc test conditions, the life-time does not show any significant change within an MoS 2 thickness range of 0.2 to 1.5 μm. Finally the life-time distribution of 160 depositions as well as some preliminary results on torque measurements with MoS 2 coated precision roller bearings are presented. (author)

  4. ZnO:Al thin films deposited by RF-magnetron sputtering with tunable and uniform properties.

    Science.gov (United States)

    Miorin, E; Montagner, F; Battiston, S; Fiameni, S; Fabrizio, M

    2011-03-01

    Nanostructured, high quality and large area Al-doped ZnO (ZnO:Al) thin films were obtained by radiofrequency (RF) magnetron sputtering. The sample rotation during deposition has resulted in excellent spatial distribution of thickness and electro-optical properties compared to that obtained under static conditions. ZnO:Al thin films are employed in a large number of devices, including thin film solar cells, where the uniformity of the properties is a key factor for a possible up-scaling of the research results to industrially relevant substrate sizes. A chemical post etching treatment was employed achieving tunable surface nanotextures to generate light scattering at the desired wavelength for improved cell efficiency. Since the film resistivity is only slightly increased by the etching, this post-deposition step allows separating the optimization of electro-optical properties from light scattering behavior. The thin films were characterized by FE-SEM, XRD, UV-VIS spectroscopy, four probe and van der Paw techniques.

  5. Copper deposition on fabrics by rf plasma sputtering for medical applications

    International Nuclear Information System (INIS)

    Segura, G; Guzmán, P; Barrantes, Y; Navarro, G; Asenjo, J; Guadamuz, S; Vargas, VI; Zuñiga, P; Chaves, S; Chaves, J

    2015-01-01

    The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10 −2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms. (paper)

  6. Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

    Institute of Scientific and Technical Information of China (English)

    ZHANG Peng; WU Si-liang; ZHANG Qin

    2008-01-01

    To compensate for nonlinear distortion introduced by RF power amplifiers (PAs) with memory effects, two correlated models, namely an extended memory polynomial (EMP) model and a memory lookup table (LUT) model, are proposed for predistorter design. Two adaptive digital predistortion (ADPD) schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square (RLS) algorithm, and the other utilizes the memory LUT model and the least mean square (LMS) algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

  7. Low Cost SU8 Based Above IC Process for High Q RF Power Inductors Integration

    International Nuclear Information System (INIS)

    Ghannam, A.; Bourrier, D.; Viallon, Ch.; Parra, Th.

    2011-01-01

    This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5 GHz has been demonstrated for an inductance value of 0.8 nH using a 60 μm thick SU8 layer and 30 μm thick copper ribbons. (author)

  8. Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sánchez-Hernández, Z.E. [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); CICATA—Altamira, IPN. Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Domínguez-Crespo, M.A., E-mail: mdominguezc@ipn.mx [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Torres-Huerta, A.M.; Onofre-Bustamante, E. [Instituto Politécnico Nacional, CICATA-Altamira, Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México (Mexico); Andraca Adame, J. [Instituto Politécnico Nacional, Centro de Nanociencias Micro y Nanotecnologías, Departamento de DRX, C. P. 07300, Mexico, DF, México (Mexico); Dorantes-Rosales, H. [Instituto Politécnico Nacional, ESIQIE, Departamento de Metalurgia, C. P. 07300 Mexico, DF, México (Mexico)

    2014-05-01

    The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO{sub 2} + 8% Y{sub 2}O{sub 3}) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphate buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure.

  9. Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Sánchez-Hernández, Z.E.; Domínguez-Crespo, M.A.; Torres-Huerta, A.M.; Onofre-Bustamante, E.; Andraca Adame, J.; Dorantes-Rosales, H.

    2014-01-01

    The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO 2 + 8% Y 2 O 3 ) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphate buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure

  10. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  11. Power deposition in superconducting magnets of the momentum cleaning insertion

    CERN Document Server

    CERN. Geneva; Baishev, I S; Jeanneret, J B; Kourotchkine, I A

    2002-01-01

    This note describes the calculation of power deposition in the superconducting magnets Q6, Q7 and MB8 downstream of the momentum collimators in IR3. To reduce a relatively high power deposition density of 1.8mW/cm^3 in the coils of Q6, we propose to install some fixed shielding collimators upstream of the warm dogleg dipoles D4.

  12. IEEE-802.15.4-based low-power body sensor node with RF energy harvester.

    Science.gov (United States)

    Tran, Thang Viet; Chung, Wan-Young

    2014-01-01

    This paper proposes the design and implementation of a low-voltage and low-power body sensor node based on the IEEE 802.15.4 standard to collect electrocardiography (ECG) and photoplethysmography (PPG) signals. To achieve compact size, low supply voltage, and low power consumption, the proposed platform is integrated into a ZigBee mote, which contains a DC-DC booster, a PPG sensor interface module, and an ECG front-end circuit that has ultra-low current consumption. The input voltage of the proposed node is very low and has a wide range, from 0.65 V to 3.3 V. An RF energy harvester is also designed to charge the battery during the working mode or standby mode of the node. The power consumption of the proposed node reaches 14 mW in working mode to prolong the battery lifetime. The software is supported by the nesC language under the TinyOS environment, which enables the proposed node to be easily configured to function as an individual health monitoring node or a node in a wireless body sensor network (BSN). The proposed node is used to set up a wireless BSN that can simultaneously collect ECG and PPG signals and monitor the results on the personal computer.

  13. High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

  14. Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

    2010-09-15

    Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

  15. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  16. Reduction of field emission in superconducting cavities with high power pulsed RF

    International Nuclear Information System (INIS)

    Graber, J.; Crawford, C.; Kirchgessner, J.; Padamsee, H.; Rubin, D.; Schmueser, P.

    1994-01-01

    A systematic study is presented of the effects of pulsed high power RF processing (HPP) as a method of reducing field emission (FE) in superconducting radio frequency (SRF) cavities to reach higher accelerating gradients for future particle accelerators. The processing apparatus was built to provide up to 150 kW peak RF power to 3 GHz cavities, for pulse lengths from 200 μs to 1 ms. Single-cell and nine-cell cavities were tested extensively. The thermal conductivity of the niobium for these cavities was made as high as possible to ensure stability against thermal breakdown of superconductivity. HPP proves to be a highly successful method of reducing FE loading in nine-cell SRF cavities. Attainable continuous wave (CW) fields increase by as much as 80% from their pre-HPP limits. The CW accelerating field achieved with nine-cell cavities improved from 8-15 MV/m with HPP to 14-20 MV/m. The benefits are stable with subsequent exposure to dust-free air. More importantly, HPP also proves effective against new field emission subsequently introduced by cold and warm vacuum ''accidents'' which admitted ''dirty'' air into the cavities. Clear correlations are obtained linking FE reduction with the maximum surface electric field attained during processing. In single cells the maximums reached were E peak =72 MV/m and H peak =1660 Oe. Thermal breakdown, initiated by accompanying high surface magnetic fields is the dominant limitation on the attainable fields for pulsed processing, as well as for final CW and long pulse operation. To prove that the surface magnetic field rather than the surface electric fields is the limitation to HPP effectiveness, a special two-cell cavity with a reduced magnetic to electric field ratio is successfully tested. During HPP, pulsed fields reach E peak =113 MV/m (H peak =1600 Oe) and subsequent CW low power measurement reached E peak =100 MV/m, the highest CW field ever measured in a superconducting accelerator cavity. ((orig.))

  17. In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition tool

    International Nuclear Information System (INIS)

    Meng Liang; Raju, Ramasamy; Flauta, Randolph; Shin, Hyungjoo; Ruzic, David N.; Hayden, Douglas B.

    2010-01-01

    Using a newly designed and built plasma diagnostic system, the plasma parameters were investigated on a commercial 200 mm high-power hollow cathode magnetron (HCM) physical vapor deposition tool using Ta target under argon plasma. A three dimensional (3D) scanning radio frequency (rf)-compensated Langmuir probe was constructed to measure the spatial distribution of the electron temperature (T e ) and electron density (n e ) in the substrate region of the HCM tool at various input powers (2-15 kW) and pressures (10-70 mTorr). The T e was in the range of 1-3 eV, scaling with decreasing power and decreasing pressure. Meanwhile, n e was in the range of 4x10 10 -1x10 12 cm -3 scaling with increasing power and decreasing pressure. As metal deposits on the probe during the probe measurements, a self-cleaning plasma cup was designed and installed in the chamber to clean the tungsten probe tip. However, its effectiveness in recovering the measured plasma parameters was hindered by the metal layer deposited on the insulating probe tube which was accounted for the variation in the plasma measurements. Using a quartz crystal microbalance combined with electrostatic filters, the ionization fraction of the metal flux was measured at various input power of 2-16 kW and pressure of 5-40 mTorr. The metal ionization fraction reduced significantly with the increasing input power and decreasing gas pressure which were attributed to the corresponding variation in the ionization cross section and the residence time of the sputtered atoms in the plasma, respectively. Both the metal neutral and ion flux increased at higher power and lower pressure. The 3D measurements further showed that the ionization fraction decreased when moving up from the substrate to the cathode.

  18. Effect of RF Interference on the Security-Reliability Trade-off Analysis of Multiuser Mixed RF/FSO Relay Networks with Power Allocation

    KAUST Repository

    Abd El-Malek, Ahmed H.; Salhab, Anas; Zummo, Salam; Alouini, Mohamed-Slim

    2017-01-01

    In this paper, the impact of radio frequency (RF) cochannel interference (CCI) on the performance of multiuser mixed RF/free-space optical (FSO) relay network with opportunistic user scheduling under eavesdropping attack is studied. The considered

  19. Influence of ferroelectric layer on artificial multiferroic LSMO/BTO bilayers deposited by Dc and RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ordonez, J. E.; Gomez, M. E.; Lopera, W. [Universidad del Valle, Department of Physics, A. A. 25360 Cali (Colombia)

    2016-11-01

    La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO)/BaTiO{sub 3} (BTO) bilayers were deposited on (001) SrTiO{sub 3} substrates via Dc and RF sputtering at pure oxygen atmosphere at a substrate temperature of 830 degrees Celsius. We studied the structural, electrical and magnetic properties on LSMO/BTO bilayers, when LSMO thickness is fixed at nm and BTO thickness is varied from 20 to 100 nm. Reciprocal Space Maps in LSMO show a strained growth for all samples, while BTO layers are always relaxed. Magnetization and electrical measurements indicate the influence of the ferroelectric layer, due to saturation magnetization increases from 500 to 590 emu/cm{sup 3} and coercive field decreases from 178 to 82 Oe with BTO thickness. Mean Field mechanism is identified on all samples with critical exponent β between 0.42 and 0.54. Resistivity measurements show electron-electron and magnon-magnon scattering conduction mechanisms. The influence on magnetic and electrical properties of bilayers with BTO thickness is attributed to crystallographic strains at the interface and the corresponding relaxation with increasing BTO layer thickness. The thickness of the individual layers were obtained by X-ray reflectivity measurements in the bilayers, not shown. X-ray diffraction and Reciprocal Space Maps measurements show highly textured layers with preferential growth in the c-axis direction. (Author)

  20. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  1. Ash Deposition Trials at Three Power Stations in Denmark

    DEFF Research Database (Denmark)

    Laursen, Karin; Frandsen, Flemming; Larsen, Ole Hede

    1998-01-01

    Six full-scale trials were conducted at three power stations in Denmark: Ensted, Funen, and Vendsyssel power stations. During these trials, pulverized coal, bottom ash, fly ash, and deposits from cooled probes were sampled and analyzed with various techniques. On the basis of SEM analyses...

  2. Power deposition to the facing components in Tore-Supra

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis, P.; Koski, J.; Watkins, J.

    1990-01-01

    The modifications of the power scrape-off length, λ q and power deposition are studied for various configurations in ohmic Tore-Supra plasmas. The plasma is either touching the horizontal limiter alone, the full set of six pump limiters or the inner bumper limiter. All configurations are with and without the ergodic divertor system energized. From a comparison of the infrared images of the limiter we derived that the λ q for power deposition was slightly less than 9±1 mm in ohmic plasmas which is in agreement with the predicted design value of 10 mm. Using the six limiters, instead of one, does not modify λ q significantly, but leads to small asymmetries. The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreases. These λ q values have been independently determined by calorimetric measurements on the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases. In the presence of the ergodic divertor we observe a broadening of the scrape-off layer, the e-folding length for power deposition reaching 2.5 cm. Large asymmetries in the power deposition can be seen on the front face of the limiter, leading to the formation of hot spots at the leading edges. (orig.)

  3. Power deposition to the facing components in Tore-Supra

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis, P.

    1990-01-01

    The modification of power scrape-off-length, λq, and power deposition are studied during various configurations in ohmic TORE-SUPRA plasmas. The plasma is either leaning on the horizontal limiter alone, on the full set of 6 pump limiters or on the inner bumper limiter, all configurations with and without the ergodic divertor system energised. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1 mm) in ohmic plasma which is in agreement with the predicted design value of 10 mm. Inserting the 6 limiters, instead of 1, does not modify significantly λq, but lead to small asymmetries. The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased. These λq values have been independently determined by calorimetric measurements done on the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases. In the presence of the ergodic divertor we observe a broadening of the scrape off layer, the e-folding length for power deposition reaching 2.5 cm. Large asymmetries on power deposition can be seen on the front face of the limiter leading to the formation of hot spots at the leading edges

  4. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  5. Design and construction of a 500 KW CW, 400 MHz klystron to be used as RF power source for LHC/RF component tests

    CERN Document Server

    Frischholz, Hans; Pearson, C

    1998-01-01

    A 500 kW cw klystron operating at 400 MHz was developed and constructed jointly by CERN and SLAC for use as a high-power source at CERN for testing LHC/RF components such as circulators, RF absorbers and superconducting cavities with their input couplers. The design is a modification of the 353 MHz SLAC PEP-I klystron. More than 80% of the original PEP-I tube parts could thus be incorporated in the LHC test klystron which resulted in lower engineering costs as well as reduced development and construction time. The physical length between cathode plane and upper pole plate was kept unchanged so that a PEP-I tube focusing solenoid, available at CERN, could be re-used. With the aid of the klystron simulation codes JPNDISK and CONDOR, the design of the LHC tube was accomplished, which resulted in a tube with noticeably higher efficiency than its predecessor, the PEP-I klystron. The integrated cavities were redesigned using SUPERFISH and the output coupling circuit, which also required redesigning, was done with t...

  6. Two-Way Multiuser Mixed RF/FSO Relaying: Performance Analysis and Power Allocation

    KAUST Repository

    Al-Eryani, Yasser F.; Salhab, Anas; Zummo, Salam A.; Alouini, Mohamed-Slim

    2018-01-01

    In this paper, the performance of two-way multiuser mixed radio frequency/free space optical (RF/FSO) relay networks with opportunistic user scheduling and asymmetric channel fading is studied. RF links are used to conduct data transmission between

  7. Control of thermal therapies with moving power deposition field

    International Nuclear Information System (INIS)

    Arora, Dhiraj; Minor, Mark A; Skliar, Mikhail; Roemer, Robert B

    2006-01-01

    A thermal therapy feedback control approach to control thermal dose using a moving power deposition field is developed and evaluated using simulations. A normal tissue safety objective is incorporated in the controller design by imposing constraints on temperature elevations at selected normal tissue locations. The proposed control technique consists of two stages. The first stage uses a model-based sliding mode controller that dynamically generates an 'ideal' power deposition profile which is generally unrealizable with available heating modalities. Subsequently, in order to approximately realize this spatially distributed idealized power deposition, a constrained quadratic optimizer is implemented to compute intensities and dwell times for a set of pre-selected power deposition fields created by a scanned focused transducer. The dwell times for various power deposition profiles are dynamically generated online as opposed to the commonly employed a priori-decided heating strategies. Dynamic intensity and trajectory generation safeguards the treatment outcome against modelling uncertainties and unknown disturbances. The controller is designed to enforce simultaneous activation of multiple normal tissue temperature constraints by rapidly switching between various power deposition profiles. The hypothesis behind the controller design is that the simultaneous activation of multiple constraints substantially reduces treatment time without compromising normal tissue safety. The controller performance and robustness with respect to parameter uncertainties is evaluated using simulations. The results demonstrate that the proposed controller can successfully deliver the desired thermal dose to the target while maintaining the temperatures at the user-specified normal tissue locations at or below the maximum allowable values. Although demonstrated for the case of a scanned focused ultrasound transducer, the developed approach can be extended to other heating modalities with

  8. RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

    Science.gov (United States)

    Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

    2015-03-01

    A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

  9. Hybrid biocomposites based on titania nanotubes and a hydroxyapatite coating deposited by RF-magnetron sputtering: Surface topography, structure, and mechanical properties

    Science.gov (United States)

    Chernozem, Roman V.; Surmeneva, Maria A.; Krause, Bärbel; Baumbach, Tilo; Ignatov, Viktor P.; Tyurin, Alexander I.; Loza, Kateryna; Epple, Matthias; Surmenev, Roman A.

    2017-12-01

    In this study, biocomposites based on porous titanium oxide structures and a calcium phosphate (CaP) or hydroxyapatite (HA) coating are described and prepared. Nanotubes (NTs) with different pore dimensions were processed using anodic oxidation of Ti substrates in a NH4F-containing electrolyte solution at anodization voltages of 30 and 60 V with a DC power supply. The external diameters of the nanotubes prepared at 30 V and 60 V were 53 ± 10 and 98 ± 16 nm, respectively. RF-magnetron sputtering of the HA target in a single deposition run was performed to prepare a coating on the surface of TiO2 NTs prepared at 30 and 60 V. The thickness of the CaP coating deposited on the mirror-polished Si substrate in the same deposition run with TiO2 NTs was determined by optical ellipsometry (SE) 95 ± 5 nm. Uncoated and CaP-coated NTs were annealed at 500 °C in air. Afterwards, the presence of TiO2 (anatase) was observed. The scanning electron microscopy (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and nanoindentation results revealed the influence that the NT dimensions had on the CaP coating deposition process. The tubular surfaces of the NTs were completely coated with the HA coating when prepared at 30 V, and no homogeneous CaP coating was observed when prepared at 60 V. The XRD patterns show peaks assigned to crystalline HA only for the coated TiO2 NTs prepared at 30 V. High-resolution XPS spectra show binding energies (BE) of Ca 2p, P 2p and O 1s core-levels corresponding to HA and amorphous calcium phosphate on TiO2 NTs prepared at 30 V and 60 V, respectively. Fabrication of TiO2 NTs results in a significant decrease to the elastic modulus and nanohardness compared to the Ti substrate. The porous structure of the NTs causes an increase in the elastic strain to failure of the coating (H/E) and the parameter used to describe the resistance of the material to plastic deformation (H3/E2) at the nanoscale level compared to the Ti substrate. Furthermore

  10. Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

    International Nuclear Information System (INIS)

    Manjula, J.; Malarvizhi, S.

    2014-01-01

    This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. (semiconductor integrated circuits)

  11. A new slip stacking RF system for a twofold power upgrade of Fermilab's Accelerator Complex

    Energy Technology Data Exchange (ETDEWEB)

    Madrak, Robyn [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2014-05-15

    Fermilab's Accelerator Complex has been recently upgraded, in order to increase the 120 GeV proton beam power on target from about 400 kW to over 700 kW for NOvA and other future intensity frontier experiments. One of the key ingredients of the upgrade is the offloading of some Main Injector synchrotron operations - beam injection and RF manipulation called ''slip stacking'' - to the 8GeV Recycler Ring, which had until recently been used only for low-intensity antiproton storage and cooling. This required construction of two new 53 MHz RF systems for the slip-stacking manipulations. The cavities operate simultaneously at Vpeak ≲150 kV, but at slightly different frequencies (Δf=1260 Hz). Their installation was completed in September 2013. This article describes the novel solutions used in the design of the new cavities, their tuning system, and the associated high power RF system. First results showing effective operation of the RF system, beam capture and successful slip-stacking in the Recycler Ring are presented.

  12. Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Labitzke, R.; Adolphi, B.; Jastrabík, Lubomír; Adámek, Petr; Drahokoupil, Jan; Hubička, Zdeněk; Kiselev, D.A.; Kholkin, A. L.; Gerlach, G.; Dejneka, Alexandr

    2011-01-01

    Roč. 205, č. 2 (2011), S241-S244 ISSN 0257-8972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed DC reactive sputtering * RF reactive sputtering * complex oxide film deposition * polymer substrate Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  13. Fast-wave power flow along SOL field lines in NSTX and the associated power deposition profile across the SOL in front of the antenna

    International Nuclear Information System (INIS)

    Perkins, R.J.; Bell, R.E.; Diallo, A.; Gerhardt, S.; Hosea, J.C.; Jaworski, M.A.; LeBlanc, B.P.; Kramer, G.J.; Maingi, R.; Phillips, C.K.; Podestà, M.; Roquemore, L.; Scotti, F.; Ahn, J.-W.; Gray, T.K.; Green, D.L.; McLean, A.; Ryan, P.M.; Jaeger, E.F.; Sabbagh, S.

    2013-01-01

    Fast-wave heating and current drive efficiencies can be reduced by a number of processes in the vicinity of the antenna and in the scrape-off layer (SOL). On NSTX from around 25% to more than 60% of the high-harmonic fast-wave power can be lost to the SOL regions, and a large part of this lost power flows along SOL magnetic field lines and is deposited in bright spirals on the divertor floor and ceiling. We show that field-line mapping matches the location of heat deposition on the lower divertor, albeit with a portion of the heat outside of the predictions. The field-line mapping can then be used to partially reconstruct the profile of lost fast-wave power at the midplane in front of the antenna, and the losses peak close to the last closed flux surface as well as the antenna. This profile suggests a radial standing-wave pattern formed by fast-wave propagation in the SOL, and this hypothesis will be tested on NSTX-U. RF codes must reproduce these results so that such codes can be used to understand this edge loss and to minimize RF heat deposition and erosion in the divertor region on ITER. (paper)

  14. RF Power Detector/Monitor Upgrade for the 500MHz Systems at the ALS

    International Nuclear Information System (INIS)

    Baptiste, K.

    2003-01-01

    Several systems rely on the accurate and linear detection of 500 MHz signals, (the fundamental frequency of both the Booster Ring and Storage Ring) over a dynamic range in excess of 25dB. Prior to this upgrade, the detector/monitor was diode based and though this type of detector could handle the dynamic range requirement it could not do so in an accurate and linear manner. In order to meet the requirements (dynamic range greater than or equal to 25dB, accurate and linear to +-0.25dB over the range, and additional circuitry to interface to the legacy control system and interlocks), a new RF Power Detector/Monitor has been developed using two AD8361, Analog Devices Tru RMS Detectors and a fuzzy comparator, which extends the overall detector's range to twice that of the AD8361. Further information is available [www.analogedevices.com/]. Details of the design requirements and the detector/monitor's circuit as well as the performance of the detector will be presented

  15. Research on DC-RF superconducting photocathode injector for high average power FELs

    International Nuclear Information System (INIS)

    Zhao Kui; Hao Jiankui; Hu Yanle; Zhang Baocheng; Quan Shengwen; Chen Jiaer; Zhuang Jiejia

    2001-01-01

    To obtain high average current electron beams for a high average power Free Electron Laser (FEL), a DC-RF superconducting injector is designed. It consists of a DC extraction gap, a 1+((1)/(2)) superconducting cavity and a coaxial input system. The DC gap, which takes the form of a Pierce configuration, is connected to the 1+((1)/(2)) superconducting cavity. The photocathode is attached to the negative electrode of the DC gap. The anode forms the bottom of the ((1)/(2)) cavity. Simulations are made to model the beam dynamics of the electron beams extracted by the DC gap and accelerated by the superconducting cavity. High quality electron beams with emittance lower than 3 π-mm-mrad can be obtained. The optimization of experiments with the DC gap, as well as the design of experiments with the coaxial coupler have all been completed. An optimized 1+((1)/(2)) superconducting cavity is in the process of being studied and manufactured

  16. Design and development of embedded control system for high power RF test facility

    International Nuclear Information System (INIS)

    Nageswara Rao, J.; Badapanda, M.K.; Upadhyay, Rinki; Tripathi, Akhilesh; Hannurkar, P.R.

    2013-01-01

    Design and development of an embedded control system for the control, interlock and operation of 1MW, 352.2 MHz TH2089 klystron based RF test facility. The key components of the control system are NI compact Re configurable Input Output (cRIO) system and Windows based PC. The cRIO system's rugged hardware architecture includes a 1.06 GHz Dual-Core embedded controller with Real Time (RT) Operating System, a reconfigurable Field Programmable Gate Array (FPGA) chassis for custom I/O timing, control and processing; and I/O modules. Windows based Graphical User Interface (GUI) has been developed to guide the user through start-up procedure, to set the operating parameters and also to display the status information of all the signals. The application software for data logging and publishing of the acquired data namely set, read back and status signals of auxiliary power supplies and machine safety interlocks has been developed in LabVIEW RT module and is running on embedded controller. Machine safety interlock logic has been implemented in FPGA to meet the time criticality. (author)

  17. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Nitrate (NO3)

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized (wet) deposition, in kilograms per square kilometer multiplied by 100, of Nitrate (NO3) for the year 2002 compiled for every MRB_E2RF1 catchment of the Major River Basins (MRBs, Crawford and others, 2006). Estimates of NO3 deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  18. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Total Inorganic Nitrogen

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized atmospheric (wet) deposition, in kilograms per square kilometer multiplied by 100, of Total Inorganic Nitrogen for the year 2002 compiled for every MRB_E2RF1 catchment of selected Major River Basins (MRBs, Crawford and others, 2006). Estimates of Total Inorganic Nitrogen deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  19. Attributes for MRB_E2RF1 Catchments by Major River Basins in the Conterminous United States: Normalized Atmospheric Deposition for 2002, Ammonium (NH4)

    Science.gov (United States)

    Wieczorek, Michael; LaMotte, Andrew E.

    2010-01-01

    This tabular data set represents the average normalized (wet) deposition, in kilograms per square kilometer multiplied by 100, of ammonium (NH4) for the year 2002 compiled for every MRB_E2RF1 catchment of the Major River Basins (MRBs, Crawford and others, 2006). Estimates of NH4 deposition are based on National Atmospheric Deposition Program (NADP) measurements (B. Larsen, U.S. Geological Survey, written. commun., 2007). De-trending methods applied to the year 2002 are described in Alexander and others, 2001. NADP site selection met the following criteria: stations must have records from 1995 to 2002 and have a minimum of 30 observations. The MRB_E2RF1 catchments are based on a modified version of the U.S. Environmental Protection Agency's (USEPA) ERF1_2 and include enhancements to support national and regional-scale surface-water quality modeling (Nolan and others, 2002; Brakebill and others, 2011). Data were compiled for every MRB_E2RF1 catchment for the conterminous United States covering New England and Mid-Atlantic (MRB1), South Atlantic-Gulf and Tennessee (MRB2), the Great Lakes, Ohio, Upper Mississippi, and Souris-Red-Rainy (MRB3), the Missouri (MRB4), the Lower Mississippi, Arkansas-White-Red, and Texas-Gulf (MRB5), the Rio Grande, Colorado, and the Great basin (MRB6), the Pacific Northwest (MRB7) river basins, and California (MRB8).

  20. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Science.gov (United States)

    Weinberger, Oliver; Winter, Lukas; Dieringer, Matthias A; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated. Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit. Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants.

  1. Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

    2016-09-05

    N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  2. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  3. Design, fabrication and low power RF testing of a prototype beta=1, 1050 MHz cavity developed for electron linac

    International Nuclear Information System (INIS)

    Sarkar, S.; Mondal, J.; Mittal, K.C.

    2013-01-01

    A single cell 1050 MHz β = 1 elliptical cavity has been designed for possible use in High energy electron accelerator. A prototype Aluminium cavity has been fabricated by die punch method and low power testing of the cavity has been carried out by using VNA. The fundamental mode frequency of the prototype cavity is found out to be 1051.38 MHz and Q (loaded) and Q0 values corresponding to 2 modes are 8439 and 10013 respectively. Cell to cell coupling coefficient is 1.82 % from measurement which matches with the designed value (1.84%). The higher order mode frequencies are also measured and electric field of the cavity is confirmed by bead pull method. Low power RF measurements on the prototype cavity indicate that the critical RF parameters (Qo, f, Kc etc) for the cavity are consistent with the designed value. (author)

  4. Lower hybrid current drive and heating experiments at the 1 MW rf power level on Alcator C

    International Nuclear Information System (INIS)

    Porkolab, M.; Lloyd, B.; Schuss, J.J.

    1983-07-01

    Lower hybrid current drive experiments were carried out in the density range 1.0 x 10 13 less than or equal to anti n(cm -3 ) less than or equal to 1.0 x 10 14 , at magnetic fields 6.0 less than or equal to B(T) less than or equal to 10. Using one 16 waveguide array, plasma currents of 150 to 200 kA have been driven by rf powers up to 600 kW for times greater than 100 msec at anti n/sub e/ up to 5 x 10 13 cm -3 . With two arrays at anti n/sub e/ approx. = 4.3 x 10 13 cm -3 at B/sub T/ = 10 T, plasma currents of 160 kA have been maintained by the rf power for 300 msec with zero loop voltage and constant internal inductance

  5. rf power dependence of subharmonic voltage spectra of two-dimensional Josephson-junction arrays

    International Nuclear Information System (INIS)

    Hebboul, S.E.; Garland, J.C.

    1993-01-01

    We have measured the rf-bias-current dependence of the ν/2 subharmonic spectral response of planar 300x300 Nb-Au-Nb proximity-coupled Josephson-junction arrays. The ν/2 subharmonic voltage spectrum was examined at two rf-bias frequencies, ν/ν c ∼1.4, 2.0 (ν c ∼120 MHz), and in applied magnetic fields corresponding to f=0,1/2 flux quantum per plaquette. The measurements were compared to analytical predictions for an rf-biased asymmetric superconducting quantum interference device with non-negligble loop inductance and large rf-bias-current amplitudes, based on the resistively shunted Josephson-junction model. Reasonable agreement was found between experiment and theory, suggesting that a possible origin for the observed subharmonic behavior in arrays involves an interplay between array plaquette inductances and junction critical-current variations

  6. RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

    International Nuclear Information System (INIS)

    Iannacci, J; Tschoban, C

    2017-01-01

    RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  −10 dB to  −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed. (paper)

  7. Effects of an Anomalous Resistivity on the Power Deposition by Alfven Waves in Pre-Heated Spherical Tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Bruma, C.; Cuperman, S.; Komoshvili, K. [Tel Aviv Univ., Ramat Aviv (Israel)

    2005-08-01

    As it is the case with tokamaks in general, and moreover, due to their specific geometry (limited space for inboard solenoid magnets), low aspect ratio (spherical) tokamaks (STs) require additional auxiliary non-ohmic current startup and maintenance, generation of internal transport barriers (associated with underlying sheared poloidal flows and quasi-stationary radial electric fields), plasma heating, etc. One of the options to generate these necessary effects in STs is by the aid of rf waves launched from a suitable external antenna; in this option the effects just mentioned are a consequence of ponderomotive forces resulting from the interaction of the rf waves with the plasma. Since experimental data on STs (viz., the START-device) reveal the presence of an anomalous plasma resistivity (about four times Spitzer's one), we carried out a systematic parametric investigation of the effects of an increased plasma resistivity on the magnitude and spatial localization of the resulting power deposition.

  8. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

    Directory of Open Access Journals (Sweden)

    Abdul Manaf Hashim

    2011-08-01

    Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  9. Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

    Science.gov (United States)

    Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

    2011-01-01

    A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  10. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-01-01

    In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

  11. Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

    International Nuclear Information System (INIS)

    Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

    1992-01-01

    This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

  12. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

    2009-06-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  13. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    International Nuclear Information System (INIS)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

    2009-01-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  14. Low Power Universal Direct Conversion Transmit and Receive (UTR) RF Module for Software Defined Radios, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Conventional software defined radio (SDR) backend signal processors are limited by apriori system definitions and respectively chosen RF hardware. Ideally, the RF...

  15. A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed

    2018-01-09

    This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

  16. A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

    KAUST Repository

    Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

    2018-01-01

    This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

  17. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  18. Fabrication and characterization of implantable and flexible nerve cuff electrodes with Pt, Ir and IrOx films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Lee, Soo Hyun; Jung, Jung Hwan; Chae, Youn Mee; Kang, Ji Yoon; Suh, Jun-Kyo Francis

    2010-01-01

    This paper presents the fabrication and characterization of implantable and flexible nerve cuff electrodes for neural interfaces using the conventional BioMEMS technique. In order to fabricate a flexible nerve electrode, polyimide (PI) was chosen as the substrate material. Then, nerve electrodes were thermally re-formed in a cuff shape so as to increase the area in which the charges were transferred to the nerve. Platinum (Pt), iridium (Ir) and iridium oxide (IrO x ) films, which were to serve as conducting materials for the nerve electrodes, were deposited at different working pressures by RF magnetron sputtering. The electrochemical properties of the deposited films were characterized by electrochemical impedance spectroscopy (EIS). The charge delivery capacities of the films were recorded and calculated by cyclic voltammetry (CV). The deposited films of Pt, Ir and IrO x have strong differences in electrochemical properties, which depend on the working pressure of sputter. Each film deposited at 30 mTorr of working pressure shows the highest value of charge delivery capacity (CDC). For the IrO x films, the electrochemical properties were strongly affected by the working pressure as well as the Ar:O 2 gas ratio. The IrO x film deposited with an Ar:O 2 gas ratio of 8:1 showed the highest CDC of 59.5 mC cm −2 , which was about five times higher than that of films deposited with a 1:1 gas ratio.

  19. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  20. Practical use of the amplitude and phase modulation of a high-power RF pulse via feed-forward control

    International Nuclear Information System (INIS)

    Kawase, Keigo; Kato, Ryukou; Irizawa, Akinori; Isoyama, Goro; Kashiwagi, Shigeru

    2013-01-01

    A new feed-forward control system to precisely control the amplitude and phase of the pulsed RF power in an electron linear accelerator (linac) is developed to make the accelerating field constant. Fast variations and ripples in the amplitude and phase in the RF pulses are compensated by modulating the amplitude and phase in the low-level system with a variable attenuator and phase shifter. The system is innovated the overdrive technique, which is commonly used in analog circuits, to speed up the slow response of the phase shifter, while the control signals are digitally processed; thus, the method is a hybrid of analog and digital techniques. By using the new control system, we find that the peak-to-peak variations in the amplitude and phase are reduced from 11.6% to 0.4% and from 6.1 degrees to 0.3 degrees, respectively, in 7.6-μs-long RF pulses for the L-band electron linac at Osaka University. (author)

  1. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    International Nuclear Information System (INIS)

    Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

    2012-01-01

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  2. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

    2012-01-31

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  3. Narrow power deposition profiles on the JET divertor target

    International Nuclear Information System (INIS)

    Lingertat, J.; Laux, M.; Monk, R.

    2001-01-01

    One of the key unresolved issues in the design of a future fusion reactor is the power handling capability of the divertor target plates. Earlier we reported on the existence of narrow power deposition profiles in JET, obtained mainly from Langmuir probe measurements. We repeated these measurements in the MkI, MkII and MkIIGB divertor configurations with an upgraded probe system, which allowed us to study the profile shape in more detail. The main results of this study are: In NB heated discharges the electron temperature and power flux at the outer target show a distinct peak of ∼5 mm half-width near the separatrix strike point. The corresponding profiles on the inner target do not show a similar feature. The height of the narrow peak increases with NB heating power and decreases with deuterium and impurity gas puffing. Ion orbit losses are suggested as a possible explanation of the observed profile shape

  4. Power deposition in a cylindrical geometry using B-10 coatings

    International Nuclear Information System (INIS)

    Chung, A.K.; Prelas, M.A.

    1983-01-01

    The transport of charged particles produced by 10 B (n, α) Li and 235 U (n, νn) ff nuclear reactions in a two region cylindrical geometry is predicted. We employed a mean-range straight-flight approximation to calculate the power deposition by the charged particles in a gaseous medium. Our model demonstrated some features in a cylindrical experiment which were suspected but not proven. In the common slab model used by Guyot et al 1 and Romero 2 , the spatial distribution of power deposition is much flatter than it would be in a cylindrical model. A steeper gradient in the power deposition is expected in a cylindrical geometry than in a slab geometry. We also found that for a standard thickness of Boron-10 coating (1.73 μm) used in NPLs, the expected efficiency of a cylindrical geometry (7.5%) is much lower than the 12% efficiency predicted by the slab model. Indeed the use of slab geometry in modeling current NPL experimental devices is not accurate

  5. Design, development and operational experience of radio frequency (RF) power systems/technologies for LEHIPA and 400 keV RFQ

    International Nuclear Information System (INIS)

    Pande, Manjiri; Shrotriya, Sandip; Patel, Niranjan

    2015-01-01

    The important technology development for ion accelerators of 'accelerator driven sub critical reactor system (ADS) is being done under the program of Department of Atomic Energy (DAE). In BARC (BARC) of DAE, technology development of 400 keV radio frequency quadrupole (RFQ) accelerator is done and a 20 MeV - low energy high intensity proton accelerator (LEHIPA) is under development. A 400 KeV deuteron RFQ accelerator is already developed at BARC and its 60 kW radio frequency (RF) power system required for beam acceleration has been designed, developed and tested both in CW mode and in pulse mode for full power of 60 leW. It has been successfully integrated with RFQ via 6-1/8'', 50 ohm RF transmission line, to accelerate proton beam up to 200 KeV energy and deuteron beam to 400 KeV energy. LEHIPA requires about 3 MW of RF power for its operation. So, three 1 MW, 352 MHz RF systems based on klystron will be developed for RFQ and two DTLs. The klystron based RF system for 3 MeV RFQ is under commissioning. Its various subsystems like energy less and insulated gate bipolar transistor (IGBT) based high voltage and low voltage bias supplies, a critical and fast protection and control system - handling various types of field signals, fast acting hard wired instrumentation circuits for critical signals, 100 kV crowbar with its circuits, pulsing circuits and RF circuits have been successfully designed, developed and integrated with klystron. Latest technology development of solid state RF amplifiers at 325 MHz and 350 MHz for normal and super conducting accelerators has attained a certain power level. This paper will discuss all these high power RF systems in detail. (author)

  6. Operational experience with -20 kV, 5 A DC power supply in Indus-2 RF system

    International Nuclear Information System (INIS)

    Tyagi, R.K.; Tripathi, A.; Upadhyay, R.; Badapanda, M.K.; Lad, M.

    2015-01-01

    An AC regulator based -20 kV, 5 A DC power supply is employed to bias 60 kW, 505.8 MHz klystron amplifier in Indus-2 RF system. A three terminal triggered spark gap based crowbar along with suitable limiting elements is incorporated at the output of the power supply for protection of sensitive klystron amplifier during load arcing conditions. Wire burn test is carried out on this power supply along with crowbar to ensure that the stored energy dumped into klystron during its arcing is less than 20 Joule. Various protection circuits like over voltage, over current, under voltage, phase failure, thermal overload and transformer oil over temperature protection have been incorporated in this power supply. Preventive maintenance of the power supply is carried out at regular intervals to ensure that it operates satisfactorily during actual operation.This includes checking the breakdown strength of transformer oil, drying of Silica gels in transformer breathers, checking of all electrical connections and cleaning of all high voltage components. The calibration of various meters, checking the setting of various protection-interlock cards and checking the healthiness of crowbar system are also done at regular intervals. During operation, crucial performance parameters of this power supply along with various interlock signals are continuously monitored. Suitable arrangement has been made to operate this supply either in local mode as well as in remote mode. This power supply is operating satisfactorily with klystron amplifier in Indus-2 RF system in round the clock mode for last 15 years and its operational experience are presented in this paper. (author)

  7. Advancement of In-Flight Alumina Powder Spheroidization Process with Water Droplet Injection Using a Small Power DC-RF Hybrid Plasma Flow System

    Science.gov (United States)

    Jang, Juyong; Takana, Hidemasa; Park, Sangkyu; Nishiyama, Hideya

    2012-09-01

    The correlation between plasma thermofluid characteristics and alumina powder spheroidization processes with water droplet injection using a small power DC-RF hybrid plasma flow system was experimentally clarified. Micro-sized water droplets with a low water flow rate were injected into the tail of thermal plasma flow so as not to disturb the plasma flow directly. Injected water droplets were vaporized in the thermal plasma flow and were transported upstream in the plasma flow to the torch by the backflow. After dissociation of water, the production of hydrogen was detected by the optical emission spectroscopy in the downstream RF plasma flow. The emission area of the DC plasma jet expanded and elongated in the vicinity of the RF coils. Additionally, the emission area of RF plasma flow enlarged and was visible as red emission in the downstream RF plasma flow in the vicinity below the RF coils due to hydrogen production. Therefore, the plasma flow mixed with produced hydrogen increased the plasma enthalpy and the highest spheroidization rate of 97% was obtained at a water flow rate of 15 Sm l/min and an atomizing gas flow rate of 8 S l/min using a small power DC-RF hybrid plasma flow system.

  8. Study on the L–H transition power threshold with RF heating and lithium-wall coating on EAST

    DEFF Research Database (Denmark)

    Chen, Leifeng; Xu, G.S.; Nielsen, Anders Henry

    2016-01-01

    The power threshold for low (L) to high (H) confinement mode transition achieved by radio-frequency (RF) heating and lithium-wall coating is investigated experimentally on EAST for two sets of walls: an all carbon wall (C) and molybdenum chamber and a carbon divertor (Mo/C). For both sets of walls...... Ploss increases with neutral density near the lower X-point in EAST with the Mo/C wall, consistent with previous results in the C wall (Xu et al 2011 Nucl. Fusion 51 072001). These findings suggest that the edge neutral density, the ion ∇B drift as well as the divertor pumping capability play important...

  9. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Characterization of a klystrode as a RF source for high-average-power accelerators

    International Nuclear Information System (INIS)

    Rees, D.; Keffeler, D.; Roybal, W.; Tallerico, P.J.

    1995-01-01

    The klystrode is a relatively new type of RF source that has demonstrated dc-to-RF conversion efficiencies in excess of 70% and a control characteristic uniquely different from those for klystron amplifiers. The different control characteristic allows the klystrode to achieve this high conversion efficiency while still providing a control margin for regulation of the accelerator cavity fields. The authors present test data from a 267-MHz, 250-kW, continuous-wave (CW) klystrode amplifier and contrast this data with conventional klystron performance, emphasizing the strengths and weaknesses of the klystrode technology for accelerator applications. They present test results describing that limitation for the 250-kW, CW klystrode and extrapolate the data to other frequencies. A summary of the operating regime explains the clear advantages of the klystrode technology over the klystron technology

  11. Comparison of Cu(In, Ga)Se{sub 2} thin films deposited on different preferred oriented Mo back contact by RF sputtering from a quaternary target

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Jing [Sichuan University, College of Materials Science and Engineering, Chengdu (China); Solar Energy Research Institute, Yunnan Normal University, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Kunming (China); Peng, Lianqin; Chen, Jinwei; Wang, Gang; Wang, Xueqin; Kang, Hong; Wang, Ruilin [Sichuan University, College of Materials Science and Engineering, Chengdu (China)

    2014-09-15

    The Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on bare glass and DC sputtered preferential oriented Mo-coated glass by RF sputtering from a single quaternary target. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD), Raman spectroscope, energy dispersive X-ray spectrometer (EDS) and atomic force microscope (AFM). Preferred orientation of the Mo back contact was tuned between (110) and (211) plane by controlling the thickness. All the deposited CIGS thin films show (112) preferred oriented chalcopyrite structures. The films prepared on Mo-coated glass show higher quality crystallinity, better stoichiometry composition and more smooth surface morphology. Especially, the film on (211) oriented Mo-coated glass with the best integrated performance is expected to be a candidate absorber for high-efficiency CIGS solar cell device. (orig.)

  12. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

    Science.gov (United States)

    Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

    2018-05-01

    Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

  13. Theoretical investigation into the feasibility to deposit RF energy centrally in the head-and-neck region

    International Nuclear Information System (INIS)

    Paulides, Margarethus M.; Vossen, Stefan H.J.A.; Zwamborn, Adrianus P.M.; Rhoon, Gerard C. van

    2005-01-01

    Purpose: To investigate the ability to deposit radiofrequency energy centrally in the neck as a function of antenna positions, number of antennas, and operating frequency. Methods and Materials: Power absorption (PA) distributions in a realistic model of the head-and-neck anatomy are calculated in which the head model is irradiated by an array of dipole antennas. The relative PA distributions corresponding to different setups are visualized and analyzed using the ratio of the average PA (aPA) in the target and neck region. Results: Both the PA distributions and aPA ratios indicate an optimal focusing ability of the setups (i.e., the ability to direct energy efficiently into the target region), between 400 and 600 MHz. In this frequency band, the focusing ability depends only moderately on the size of the neck. Finally, it is found that the focusing ability at 433 MHz is increased significantly by increasing the number of antenna elements. Conclusions: The optimal frequency is found to be highly dependent on the size of the target volume; thus, a single optimum is hard to define. However, future clinical research will focus on 433 MHz based on the optimal range of frequencies, as found in this study

  14. Measurements of crowbar performance of the 20 kV 130 A dc power supply of the TRIUMF RF system

    International Nuclear Information System (INIS)

    Mitra, A.K.

    1991-05-01

    The TRIUMF RF system operates at a fixed frequency of 23.06 MHz with a power capability of 1800 kW. The dc plate power for the four push-pull power amplifiers is provided by a single dc power supply at 20 kV, 130 A and the amplifiers are protected by a single ignitron crowbar circuit. In the case of voltage breakdown outside the tube, the triggering of the crowbar circuit relies on the voltage developed across a low resistance shunt in the return path of the common dc power supply. Frequent failure of the crowbar ignitrons following an external dc voltage breakdown led to the investigation of the crowbar performance. Current transformers have been installed in the common B + line to the power amplifiers and the anode circuit of the ignitron crowbar in order to measure amplitude, duration and time delay of various dc currents under fault conditions. Similar current transformers were installed in the individual anode circuits of the power amplifiers to provide protection to the complete system in case of an external dc voltage breakdown. The results of these measurements and recommended solutions for operations are reported. (Author) 3 refs., 4 figs

  15. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  16. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Surmeneva, Maria A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Surmenev, Roman A., E-mail: rsurmenev@gmail.com [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Fraunhofer Institute for Interfacial Engineering and Biotechnology IGB, 70569 Stuttgart (Germany); Nikonova, Yulia A.; Selezneva, Irina I. [Institute of Theoretical and Experimental Biophysics, Russian Academy of Sciences, Pushchino 142292 (Russian Federation); Ivanova, Anna A. [Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Putlyaev, Valery I. [Department of Chemistry, Moscow State University, Vorobievi Gory, 1, Moscow 119991 (Russian Federation); Prymak, Oleg; Epple, Matthias [Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, 45117 Essen (Germany)

    2014-10-30

    Highlights: • Growth of a columnar grain structure perpendicular to the substrate surface was observed. • Interplanar spacing distances measured using HRTEM were 0.82 and 0.28 nm, corresponding to the (0 0 1) and (2 1 1) lattice planes of hexagonal HA. • Grain size and crystallinity increased when increasing the deposition time. • Nanometer-thick low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules. - Abstract: A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  17. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  19. Tilt optimized flip uniformity (TOFU) RF pulse for uniform image contrast at low specific absorption rate levels in combination with a surface breast coil at 7 Tesla

    NARCIS (Netherlands)

    van Kalleveen, Irene M. L.; Boer, VO; Luijten, Peter R.; Klomp, DWJ

    Purpose: Going to ultrahigh field MRI (e. g., 7 Tesla [ T]), the nonuniformity of the B_1 field and the increased radiofrequency (RF) power deposition become challenging. While surface coils improve the power efficiency in B_1, its field remains nonuniform. In this work, an RF pulse was designed

  20. KEY COMPARISON: Final report on CCEM key comparison CCEM.RF-K10.CL (GT-RF/99-2) 'Power in 50 Ω coaxial lines, frequency: 50 MHz to 26 GHz' measurement techniques and results

    Science.gov (United States)

    Janik, Dieter; Inoue, T.; Michaud, A.

    2006-01-01

    This report summarizes the results and the measuring methods of an international key comparison between twelve national metrology institutes (NMIs) and is concerning the calibration factor of RF power sensors in the coaxial 3.5 mm line for frequencies up to 26 GHz. Two RF power travelling standards fitted with male PC 3.5 mm connectors were measured at seven frequencies. The following NMIs participated: NMIJ (Japan), NRC (Canada), NIST (USA), METAS (Switzerland), CSIR-NML (South Africa), NMIA (Australia), NPL (UK), SiQ (Slovenia), IEN (Italy), VNIIFTRI (Russian Federation), SPRING (Singapore) and PTB (Germany), as the pilot laboratory. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

  1. Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

    2010-07-15

    InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  3. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

    2013-02-01

    This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

  4. Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kwangseok; Han, Seungwoo; Park, Kyoungwan; Sok, Junghyun

    2006-01-01

    In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 .deg. C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O 2 or N 2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O 2 atmosphere turned out to be much larger than that of the post-annealed films in a N 2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O 2 content and the top electrode improve the electroresistance.

  5. Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

    Science.gov (United States)

    Surmeneva, Maria A.; Surmenev, Roman A.; Nikonova, Yulia A.; Selezneva, Irina I.; Ivanova, Anna A.; Putlyaev, Valery I.; Prymak, Oleg; Epple, Matthias

    2014-10-01

    A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

  6. Design and Modeling of RF Power Amplifiers with Radial Basis Function Artificial Neural Networks

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    A radial basis function (RBF) artificial neural network model for a designed high efficiency radio frequency class-F power amplifier (PA) is presented in this paper. The presented amplifier is designed at 1.8 GHz operating frequency with 12 dB of gain and 36 dBm of 1dB output compression point. The obtained power added efficiency (PAE) for the presented PA is 76% under 26 dBm input power. The proposed RBF model uses input and DC power of the PA as inputs variables and considers output power a...

  7. A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver

    International Nuclear Information System (INIS)

    Shi Jian; Mo Taishan; Gan Yebing; Ma Chengyan; Ye Tianchun; Le Jianlian

    2012-01-01

    A high-efficiency low-noise power solution for a dual-channel GNSS RF receiver is presented. The power solution involves a DC—DC buck converter and a followed low-dropout regulator (LDO). The pulse-width-modulation (PWM) control method is adopted for better noise performance. An improved low-power high-frequency PWM control circuit is proposed, which halves the average quiescent current of the buck converter to 80 μA by periodically shutting down the OTA. The size of the output stage has also been optimized to achieve high efficiency under a light load condition. In addition, a novel soft-start circuit based on a current limiter has been implemented to avoid inrush current. Fabricated with commercial 180-nm CMOS technology, the DC—DC converter achieves a peak efficiency of 93.1% under a 2 MHz working frequency. The whole receiver consumes only 20.2 mA from a 3.3 V power supply and has a noise figure of 2.5 dB. (semiconductor integrated circuits)

  8. DC-based smart PV-powered home energy management system based on voltage matching and RF module

    Science.gov (United States)

    Hasan, W. Z. W.

    2017-01-01

    The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances’ consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances’ energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11–123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results. PMID:28934271

  9. DC-based smart PV-powered home energy management system based on voltage matching and RF module.

    Directory of Open Access Journals (Sweden)

    Ahmad H Sabry

    Full Text Available The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances' consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances' energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11-123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results.

  10. DC-based smart PV-powered home energy management system based on voltage matching and RF module.

    Science.gov (United States)

    Sabry, Ahmad H; Hasan, W Z W; Ab Kadir, Mza; Radzi, M A M; Shafie, S

    2017-01-01

    The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances' consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances' energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11-123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results.

  11. 2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device

    International Nuclear Information System (INIS)

    Belaid, M.A.; Ketata, K.; Gares, M.; Marcon, J.; Mourgues, K.; Masmoudi, M.

    2006-01-01

    This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the physical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour. The temperature dependence of most important electrical parameters such as channel current I ds , threshold voltage V th and inter-electrodes capacitances (C ds , C gs ) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines and Fermi level are taken into account. Finally, initial failure analysis is discussed

  12. 2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device

    Energy Technology Data Exchange (ETDEWEB)

    Belaid, M.A. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France)]. E-mail: Mohamed-ali.belaid@univ-rouen.fr; Ketata, K. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Gares, M. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Marcon, J. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Mourgues, K. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France); Masmoudi, M. [LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan (France)

    2006-12-15

    This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the physical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour. The temperature dependence of most important electrical parameters such as channel current I {sub ds}, threshold voltage V {sub th} and inter-electrodes capacitances (C {sub ds}, C {sub gs}) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines and Fermi level are taken into account. Finally, initial failure analysis is discussed.

  13. Microwave matching and tuning on the 20-MeV medical electron linac with feedback of rf power

    International Nuclear Information System (INIS)

    Yuan-ling, Wang

    1983-01-01

    This article describes the 20 Mev medical electron linac at Jiangsu Tumour Hospital. In the linac, feedback of rf power is used. In the linac with feedback (or with the resonator) the reflection affects the energy gain of the electron and the performance of the accelerator. By means of the theory of the traveling wave resonator, the field multiplication factor and the reflection coefficients inside and outside the feedback ring are calculated. The bands of the linacs without and with feedback are measured. In order to achieve a desirable band in front of the load (i.e. outside the feedback ring) a matching iris is added. After the linac with feedback has been matched, the band is given

  14. Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

    International Nuclear Information System (INIS)

    Tsakadze, E.L.; Ostrikov, K.; Tsakadze, Z.L.; Vladimirov, S.V.; Xu, S.

    2004-01-01

    Radial and axial distributions of magnetic fields in a low-frequency (∼460 kHz) inductively coupled plasma source with two internal crossed planar rf current sheets are reported. The internal antenna configuration comprises two orthogonal sets of eight alternately reconnected parallel and equidistant copper litz wires in quartz enclosures and generates three magnetic (H z , H r , and H φ ) and two electric (E φ and E r ) field components at the fundamental frequency. The measurements have been performed in rarefied and dense plasmas generated in the electrostatic (E) and electromagnetic (H) discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral ('pancake') antennas. Relatively deeper rf power deposition in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental data

  15. Role of advanced RF/microwave technology and high power switch technology for developing/upgrading compact/existing accelerators

    International Nuclear Information System (INIS)

    Shrivastava, Purushottam

    2001-01-01

    With the advances in high power microwave devices as well as in microwave technologies it has become possible to go on higher frequencies at higher powers as well as to go for newer devices which are more efficient and compact and hence reducing the power needs as well as space and weight requirement for accelerators. New devices are now available in higher frequency spectrum for example at C-Band, X-band and even higher. Also new devices like klystrodes/Higher Order Mode Inductive Output Tubes (HOM IOTs) are now becoming competitors for existing tubes which are in use at present accelerator complexes. The design/planning of the accelerators used for particle physics research, medical accelerators, industrial irradiation, or even upcoming Driver Accelerators for Sub Critical Reactors for nuclear power generation are being done taking into account the newer technologies. The accelerators which use magnetrons, klystrons and similar devices at S-Band can be modified/redesigned with devices at higher frequencies like X-Band. Pulsed accelerators need high power high voltage pulsed modulators whereas CW accelerators need high voltage power supplies for functioning of RF / Microwave tubes. There had been a remarkable growth in the development and availability of solid state switches both for switching the pulsed modulators for microwave tubes as well as for making high frequency switch mode power supplies. Present paper discusses some of the advanced devices/technologies in this field as well as their capability to make advanced/compact/reliable accelerators. Microwave systems developed/under development at Centre for Advanced Technology are also discussed briefly along with some of the efforts done to make them compact. An overview of state of art vacuum tube devices and solid state switch technologies is given. (author)

  16. Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

    2013-05-01

    Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

  17. Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-01-01

    Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

  18. Power balance and loss mechanism analysis in RF transmit coil arrays.

    Science.gov (United States)

    Kuehne, Andre; Goluch, Sigrun; Waxmann, Patrick; Seifert, Frank; Ittermann, Bernd; Moser, Ewald; Laistler, Elmar

    2015-10-01

    To establish a framework for transmit array power balance calculations based on power correlation matrices to accurately quantify the loss contributions from different mechanisms such as coupling, lumped components, and radiation. Starting from Poynting's theorem, power correlation matrices are derived for all terms in the power balance, which is formulated as a matrix equation. Finite-difference time-domain simulations of two 7 T eight-channel head array coils at 297.2 MHz are used to verify the theoretical considerations and demonstrate their application. Care is taken to accurately incorporate all loss mechanisms. The power balance for static B1 phase shims as well as two-dimensional spatially selective transmit SENSE pulses is shown. The simulated power balance shows an excellent agreement with theory, with a maximum power imbalance of less than 0.11%. Power loss contributions from the different loss mechanisms vary significantly between the investigated setups, and depending on the excitation mode imposed on the coil. The presented approach enables a straightforward loss evaluation for an arbitrary excitation of transmit coil arrays. Worst-case power imbalance and losses are calculated in a straightforward manner. This allows for deeper insight into transmit array loss mechanisms, incorporation of radiated power components in specific absorption rate calculations and verification of electromagnetic simulations. © 2014 Wiley Periodicals, Inc.

  19. Microfluidic stretchable RF electronics.

    Science.gov (United States)

    Cheng, Shi; Wu, Zhigang

    2010-12-07

    Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

  20. Practical RF system design

    CERN Document Server

    Egan, William F

    2003-01-01

    he ultimate practical resource for today's RF system design professionals Radio frequency components and circuits form the backbone of today's mobile and satellite communications networks. Consequently, both practicing and aspiring industry professionals need to be able to solve ever more complex problems of RF design. Blending theoretical rigor with a wealth of practical expertise, Practical RF System Design addresses a variety of complex, real-world problems that system engineers are likely to encounter in today's burgeoning communications industry with solutions that are not easily available in the existing literature. The author, an expert in the field of RF module and system design, provides powerful techniques for analyzing real RF systems, with emphasis on some that are currently not well understood. Combining theoretical results and models with examples, he challenges readers to address such practical issues as: * How standing wave ratio affects system gain * How noise on a local oscillator will affec...

  1. X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

    Directory of Open Access Journals (Sweden)

    E. Adli

    2011-08-01

    Full Text Available We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter regime of CLIC.

  2. X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

    CERN Document Server

    Adli, E; Dubrovskiy, A; Syratchev, I; Ruber, R; Ziemann, V

    2011-01-01

    We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter reg...

  3. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  4. Compression and radiation of high-power short rf pulses. II. A novel antenna array design with combined compressor/radiator elements

    KAUST Repository

    Sirenko, Kostyantyn; Pazynin, Vadim L.; Sirenko, Yu K.; Bagci, Hakan

    2011-01-01

    The paper discusses the radiation of compressed high power short RF pulses using two different types of antennas: (i) A simple monopole antenna and (ii) a novel array design, where each of the elements is constructed by combining a compressor and a

  5. n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

    Science.gov (United States)

    Zhang, Zhiqiang; Liao, Xiaoping

    2017-06-17

    To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

  6. n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

    Directory of Open Access Journals (Sweden)

    Zhiqiang Zhang

    2017-06-01

    Full Text Available To achieve radio frequency (RF power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively.

  7. Transmission Power and Antenna Allocation for Energy-Efficient RF Energy Harvesting Networks with Massive MIMO

    Directory of Open Access Journals (Sweden)

    Yu Min Hwang

    2017-06-01

    Full Text Available The optimum transmission strategy for maximizing energy efficiency (EE of a multi-user massive multiple-input multiple-output (MIMO system in radio frequency energy harvesting networks is investigated. We focus on dynamic time-switching (TS antennas, to avoid the practical problems of power-splitting antennas, such as complex architectures, power loss and signal distortion when splitting the power of the received signal into power for information decoding (ID and energy harvesting (EH. However, since a single TS antenna cannot serve ID and EH simultaneously, the MIMO system is considered in this paper. We thus formulate an EE optimization problem and propose an iterative algorithm as a tractable solution, including an antenna selection strategy to optimally switch each TS antenna between ID mode and EH mode using nonlinear fractional programming and the Lagrange dual method. Further, the problem is solved under practical constraints of maximum transmission power and outage probabilities for a minimum amount of harvested power and rate capacity for each user. Simulation results show that the proposed algorithm is more energy-efficient than that of baseline schemes, and demonstrates the trade-off between the required amount of harvested power and energy efficiency.

  8. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Directory of Open Access Journals (Sweden)

    Oliver Weinberger

    Full Text Available The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation.Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated.Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit.Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants.

  9. Local Multi-Channel RF Surface Coil versus Body RF Coil Transmission for Cardiac Magnetic Resonance at 3 Tesla: Which Configuration Is Winning the Game?

    Science.gov (United States)

    Winter, Lukas; Dieringer, Matthias A.; Els, Antje; Oezerdem, Celal; Rieger, Jan; Kuehne, Andre; Cassara, Antonino M.; Pfeiffer, Harald; Wetterling, Friedrich; Niendorf, Thoralf

    2016-01-01

    Introduction The purpose of this study was to demonstrate the feasibility and efficiency of cardiac MR at 3 Tesla using local four-channel RF coil transmission and benchmark it against large volume body RF coil excitation. Methods Electromagnetic field simulations are conducted to detail RF power deposition, transmission field uniformity and efficiency for local and body RF coil transmission. For both excitation regimes transmission field maps are acquired in a human torso phantom. For each transmission regime flip angle distributions and blood-myocardium contrast are examined in a volunteer study of 12 subjects. The feasibility of the local transceiver RF coil array for cardiac chamber quantification at 3 Tesla is demonstrated. Results Our simulations and experiments demonstrate that cardiac MR at 3 Tesla using four-channel surface RF coil transmission is competitive versus current clinical CMR practice of large volume body RF coil transmission. The efficiency advantage of the 4TX/4RX setup facilitates shorter repetition times governed by local SAR limits versus body RF coil transmission at whole-body SAR limit. No statistically significant difference was found for cardiac chamber quantification derived with body RF coil versus four-channel surface RF coil transmission. Our simulation also show that the body RF coil exceeds local SAR limits by a factor of ~2 when driven at maximum applicable input power to reach the whole-body SAR limit. Conclusion Pursuing local surface RF coil arrays for transmission in cardiac MR is a conceptually appealing alternative to body RF coil transmission, especially for patients with implants. PMID:27598923

  10. LH power deposition and CD efficiency studies by application of modulated power at JET

    International Nuclear Information System (INIS)

    Kirov, K.K.; Baranov, Yu.; Mailloux, J.; Mayoral, M.-L.; Nave, M.F.F.; Ongena, J.

    2010-01-01

    The lower hybrid (LH) power deposition and the current drive (CD) efficiency were assessed by the application of modulated LH power. Density and magnetic field scans were performed and the response of the electron temperature provided by the available electron cyclotron emission diagnostic was investigated by means of fast Fourier transform analysis. An innovative technique based on a comparison between modelled and experimental data was developed and used in the study. The LH waves are absorbed by fast electrons with energies of a few times the thermal one, causing a modification in the electron distribution function (EDF) by creating a plateau in the parallel direction. The phase of the temperature perturbations, φ, as well as the ratio between the amplitudes of the third and the main harmonics, δT e3 /δT e1 , are found to be strongly affected by the plateau of the EDF as the broader the plateau the larger |φ|, (φ e3 /δT e1 are. Transport and Fokker-Planck modelling was used to support this conclusion as well as to interpret the experimental data and hence to assess the LHCD efficiency and deposition profile. The results from the analysis are consistent with broad off-axis LH power deposition profile. For densities between 1 x 10 19 and 4 x 10 19 m -3 , which is the accessibility limit at the highest magnetic field discharges, a gradual shift of the maximum of the power deposition to the periphery and a degradation of the CD efficiency was observed.

  11. Single-Stage Low-Power Quadrature RF Receiver Front-End: The LMV Cell

    DEFF Research Database (Denmark)

    Liscidini, Antonio; Mazzanti, Andrea; Tonietto, Riccardo

    2006-01-01

    a compact and low-power solution compatible with low-voltage technologies. A 0.13um CMOS prototype tailored to the GPS application is presented. The experimental results exhibit a noise figure of 4.8 dB, a gain of 36 dB, an IIP3 of -19 dBm with a total power consumption of only 5.4 mW from a voltage supply...

  12. Morphology and inhibition performance of Ag thin film as antimicrobial coating deposited by RF-PVD on 316 L stainless steel

    Science.gov (United States)

    Purniawan, A.; Khrisna, Y. S. A.; Rasyida, A.; Atmono, T. M.

    2018-04-01

    Foreign body related infection (FBRIs) is caused by forming biofilm of bacterial colony of medical equipment surfaces. In many cases, the FBRIs is still happened on the surface after medical sterilization process has been performed. In order to avoid the case, surface modification by antimicrobial coating was used. In this work, we present silver (Ag) thin film on 316 L stainless steel substrate surface was deposited using Radio Frequency Sputtering PVD (RF-PVD). The morphology of Ag thin film were characterized using SEM-EDX. Surface roughness of the thin film was measured by AFM. In addition, Kirby Bauer Test in Escherichia coli (E. coli) was conducted in order to evaluate the inhibition performance of the Ag thin film antimicrobial coating. Based on SEM and AFM results show that the particle size is increased from 523 nm to 708 nm and surface roughness from 9 to 20 nm for deposition time 10 minutes to 20 minutes, respectively. In addition, the inhibition layer of the coating is about 29 mm.

  13. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  14. Resistive vs. total power depositions by Alfven modes in pre-heated low aspect ratio tokamaks

    International Nuclear Information System (INIS)

    Cuperman, S.; Bruma, C.; Komoshvili, K.

    2004-01-01

    The power deposition of fast waves launched by a LFS located antenna in a pre-heated, strongly non-uniform low aspect ratio tokamak (START) is investigated. The rigorous computational results indicate a total power deposition by far larger than that predicted for Alfven continuum eigenmodes in cylindrical plasmas. For toroidal wave numbers |N| > 1, the resistive and total power depositions are almost equal. (author)

  15. Development of a movable plunger tuner for the high-power RF cavity for the PEP-II B-factory

    International Nuclear Information System (INIS)

    Schwarz, H.D.; Fant, K.; Judkins, J.G.

    1997-05-01

    A 10 cm diameter by 5 cm travel plunger tuner was developed for the PEP-II RF copper cavity system. The single cell cavity including the tuner is designed to operate up to 150 kW of dissipated RF power are specially placed 8.5 cm away from the inside wall of the cavity to avoid fundamental and higher order mode resonances. The spring fingers are made of dispersion-strengthened copper to accommodate relatively high heating. The design, alignment, testing and performance of the tuner is described

  16. Investigations on the pyrolysis of hydrocarbons in the inductive coupled RF-plasma and the deposited pyrocarbon

    International Nuclear Information System (INIS)

    Eisgruber, H.; Mazurkiewicz, M.; Nickel, H.

    1979-08-01

    The pyrocarbon coatings of the nuclear fuel particles for the High-Temperature Reactor (HTR) are produced by pyrolysis of hydrocarbons under high temperatures. The investigations of the inductive coupled argon or argon/hydrocarbon-plasma performed in the frame of this work deliver a contribution for the clarification of pyrolysis processes and the production of pyrolytic carbons in the plasma of an electric discharge. The argon-plasma, as high-temperature source, is diagnosed theoretically and emission-spectroscopically. To the pure argon-plasma the various hydrocarbons are added. Due to the thermal decomposition the carbon is separated in solid form. The structure of the deposited pyrocarbon is composed of different components. The depositions are characterised with the principles in use at the IRW and are assigned to the fluidized bed pyrocarbons as fas as possible. (orig.) [de

  17. CN.sub.x./sub. coatings deposited by pulsored RF supersonic plasma jet: hardness, nitrogenation and optical properties

    Czech Academy of Sciences Publication Activity Database

    Hubička, Zdeněk; Šícha, Miloš; Pajasová, Libuše; Soukup, Ladislav; Jastrabík, Lubomír; Chvostová, Dagmar; Wagner, T.

    142-144, - (2001), s. 681-687 ISSN 0257-8972 R&D Projects: GA ČR GA202/00/1592; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : carbon nitrides * plasma-chemical deposition * tribology * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.236, year: 2001

  18. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A

    2010-01-01

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  19. Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

    Science.gov (United States)

    Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

    2018-04-01

    Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

  20. Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Signore, M A; Valerini, D; Rizzo, A; Tapfer, L; Capodieci, L; Cappello, A [ENEA, Department of Physical Technologies and New Materials, SS7, Appia, km 706, 72100 Brindisi (Italy)

    2010-06-09

    Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results.

  1. Assessment of quasi-linear effect of RF power spectrum for enabling lower hybrid current drive in reactor plasmas

    Science.gov (United States)

    Cesario, Roberto; Cardinali, Alessandro; Castaldo, Carmine; Amicucci, Luca; Ceccuzzi, Silvio; Galli, Alessandro; Napoli, Francesco; Panaccione, Luigi; Santini, Franco; Schettini, Giuseppe; Tuccillo, Angelo Antonio

    2017-10-01

    The main research on the energy from thermonuclear fusion uses deuterium plasmas magnetically trapped in toroidal devices. To suppress the turbulent eddies that impair thermal insulation and pressure tight of the plasma, current drive (CD) is necessary, but tools envisaged so far are unable accomplishing this task while efficiently and flexibly matching the natural current profiles self-generated at large radii of the plasma column [1-5]. The lower hybrid current drive (LHCD) [6] can satisfy this important need of a reactor [1], but the LHCD system has been unexpectedly mothballed on JET. The problematic extrapolation of the LHCD tool at reactor graded high values of, respectively, density and temperatures of plasma has been now solved. The high density problem is solved by the FTU (Frascati Tokamak Upgrade) method [7], and solution of the high temperature one is presented here. Model results based on quasi-linear (QL) theory evidence the capability, w.r.t linear theory, of suitable operating parameters of reducing the wave damping in hot reactor plasmas. Namely, using higher RF power densities [8], or a narrower antenna power spectrum in refractive index [9,10], the obstacle for LHCD represented by too high temperature of reactor plasmas should be overcome. The former method cannot be used for routinely, safe antenna operations, Thus, only the latter key is really exploitable in a reactor. The proposed solutions are ultimately necessary for viability of an economic reactor.

  2. An RF-to-DC energy harvester for co-integration in a low-power 2.4 GHz transceiver frontend

    NARCIS (Netherlands)

    Masuch, J.; Delgado-Restituto, M.; Milosevic, D.; Baltus, P.G.M.

    2012-01-01

    A 2.4 GHz energy harvester for co-integration into a low-power transceiver (TRx) operating at the same frequency is presented. An RF switch decouples the harvester from the TRx and keeps the performance degradation of the TRx low, i.e. 0.2 dB reduced output power in Tx-mode and 0.4 dB reduced

  3. Spectral Analysis of Polynomial Nonlinearity with Applications to RF Power Amplifiers

    Directory of Open Access Journals (Sweden)

    G. Tong Zhou

    2004-09-01

    Full Text Available The majority of the nonlinearity in a communication system is attributed to the power amplifier (PA present at the final stage of the transmitter chain. In this paper, we consider Gaussian distributed input signals (such as OFDM, and PAs that can be modeled by memoryless or memory polynomials. We derive closed-form expressions of the PA output power spectral density, for an arbitrary nonlinear order, based on the so-called Leonov-Shiryaev formula. We then apply these results to answer practical questions such as the contribution of AM/PM conversion to spectral regrowth and the relationship between memory effects and spectral asymmetry.

  4. Improvement of RF Wireless Power Transmission Using a Circularly Polarized Retrodirective Antenna Array with EBG Structures

    Directory of Open Access Journals (Sweden)

    Son Trinh-Van

    2018-02-01

    Full Text Available This paper presents the performance improvement of a circularly polarized (CP retrodirective array (RDA through the suppression of mutual coupling effects. The RDA is designed based on CP Koch-shaped patch antenna elements with an inter-element spacing as small as 0.4 λ for a compact size ( λ is the wavelength in free space at the designed frequency of 5.2 GHz. Electromagnetic band gap (EBG structures are applied to reduce the mutual coupling between the antenna elements, thus improving the circular polarization characteristic of the RDA. Two CP RDAs with EBGs, in the case 5 × 5 and 10 × 10 arrays, are used as wireless power transmitters to transmit a total power of 50 W. A receiver is located at a distance of 1 m away from the transmitter to harvest the transmitted power. At the broadside direction, the simulated results demonstrate that the received powers are improved by approximately 11.32% and 12.45% when using the 5 × 5 and 10 × 10 CP RDAs with the EBGs, respectively, as the transmitters.

  5. High Power, Pulsed, RF Generation from Nonlinear Lumped Element Transmission Lines (NLETLs)

    Science.gov (United States)

    2011-02-05

    in order to focus on the primary technology tinder consideration. Their practicality at very high powers and frequencies is questionable due to...also possessed suitably large CXL ratios. Measuring capacitive nonlinearity tinder high voltage proved to be more tricky than first imagi- ned

  6. Multidimensional Big Spatial Data Modeling Through A Case Study: Lte Rf Subsystem Power Consumption Modeling

    DEFF Research Database (Denmark)

    Antón Castro, Francesc/François; Musiige, Deogratius; Mioc, Darka

    2016-01-01

    continuation) was conducted for finding an approach with the highest accuracy for obtaining reliable information about a cell phone consumed power and emitted radiation from streams of measurements of different physical quantities and the uncertainty ranges of these measure ments. The homotopy continuation...

  7. SiOx Ink-Repellent Layer Deposited by Radio Frequency (RF) Plasmas in Continuous Wave and Pulse Mode

    International Nuclear Information System (INIS)

    Chen Qiang; Fu Yabo; Pang Hua; Zhang Yuefei; Zhang Guangqiu

    2007-01-01

    Low surface energy layers, proposed application for non-water printing in computer to plate (CTP) technology, are deposited in both continuous wave and pulse radio frequency (13.56 MHz) plasma with hexamethyldisiloxane (HMDSO) as precursor. It is found that the plasma mode dominates the polymer growth rate and the surface composition. Derived from the spectra of X-ray photoelectron spectroscopy (XPS) and combined with printable test it is concluded that concentration of Si in coatings plays an important role for the ink printability and the ink does not adhere on the surface with high silicon concentration

  8. The deposition of trace elements in the environs of a power station

    International Nuclear Information System (INIS)

    Godbeer, W.C.; Swaine, D.J.

    1995-01-01

    The fate of trace elements during combustion is discussed, followed by the deposition of trace elements from the atmosphere and from coal firing. Methods of measuring deposition are described. Data from a four year long investigation of deposition around the Wallerawang power station is given. Sphagnum moss was used as a collector. 74 refs., 8 figs., 5 tabs

  9. Compression and radiation of high-power short rf pulses. II. A novel antenna array design with combined compressor/radiator elements

    KAUST Repository

    Sirenko, Kostyantyn

    2011-01-01

    The paper discusses the radiation of compressed high power short RF pulses using two different types of antennas: (i) A simple monopole antenna and (ii) a novel array design, where each of the elements is constructed by combining a compressor and a radiator. The studies on the monopole antenna demonstrate the possibility of a high power short RF pulse\\'s efficient radiation even using simple antennas. The studies on the novel array design demonstrate that a reduced size array with lower pulse distortion and power decay can be constructed by assembling the array from elements each of which integrates a compressor and a radiator. This design idea can be used with any type of antenna array; in this work it is applied to a phased array.

  10. Novel methods and applications of NMR and MRI. Low-power RF excitation and hyperpolarized Xenon-129

    International Nuclear Information System (INIS)

    Amor, Nadia

    2012-01-01

    Since their discovery in the middle of the last century, Nuclear Magnetic Resonance (NMR) and Magnetic Resonance Imaging (MRI) have become an important and very versatile tool in industry, medicine, and basic research. The aim of this work is to explore possible improvements and new applications of NMR methods. First, a recently introduced excitation NMR pulse sequence, termed Frank sequence excitation, which allows for significant reduction of rf-excitation power, is systematically analyzed and compared to conventional NMR in detail. Furthermore, its feasibility for MRI is investigated and advantages as well as drawbacks in comparison to standard MRI are discussed. The second part focuses on new biomedical applications of hyperpolarized (HP) 129 Xe which not only offers a signal enhancement of several orders of magnitude but also provides new contrast mechanisms. A setup for continuous dissolution of HP 129 Xe gas into blood and other fluids is optimized and analyzed quantitatively by NMR and MRI. On the basis of these results, blood-dissolved HP 129 Xe is used to investigate blood-gas dynamics, as well as the rheological behavior of blood.

  11. Novel methods and applications of NMR and MRI. Low-power RF excitation and hyperpolarized Xenon-129

    Energy Technology Data Exchange (ETDEWEB)

    Amor, Nadia

    2012-07-01

    Since their discovery in the middle of the last century, Nuclear Magnetic Resonance (NMR) and Magnetic Resonance Imaging (MRI) have become an important and very versatile tool in industry, medicine, and basic research. The aim of this work is to explore possible improvements and new applications of NMR methods. First, a recently introduced excitation NMR pulse sequence, termed Frank sequence excitation, which allows for significant reduction of rf-excitation power, is systematically analyzed and compared to conventional NMR in detail. Furthermore, its feasibility for MRI is investigated and advantages as well as drawbacks in comparison to standard MRI are discussed. The second part focuses on new biomedical applications of hyperpolarized (HP) {sup 129}Xe which not only offers a signal enhancement of several orders of magnitude but also provides new contrast mechanisms. A setup for continuous dissolution of HP {sup 129}Xe gas into blood and other fluids is optimized and analyzed quantitatively by NMR and MRI. On the basis of these results, blood-dissolved HP {sup 129}Xe is used to investigate blood-gas dynamics, as well as the rheological behavior of blood.

  12. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  13. Electrical properties of SrBi2Ta2O9 thin films deposited on Si (100) substrates by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Roy, A.; Jha, G.; Dhar, A.; Ray, S.K.; Manna, I.

    2008-01-01

    Recently, metal-ferroelectric-semiconductor (MFS) structures have attracted much attention because of its potentials as nonvolatile memory device with nondestructive readout operation. In the present study ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films are grown on p-type (100) Si substrates by rf magnetron sputtering method at different deposition conditions. The crystallinity of the films is studied using grazing incidence X-ray diffraction (GIXRD) pattern. The spectra show the film are polycrystalline with dominant orientation along (115) plane. The capacitance-voltage (C-V) characteristics of Al/SBT/Si capacitors were measured at 100 kHz. The (C-V) characteristic of AI/SBT/Si capacitor post-annealed at 700-800 deg C shows a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop is 0.88 V when the gate voltage is ± 5 V. The interface trap density (D it ) calculated by using Hills method at room temperature and a value in the order of 10 11 -10 12 eV -1 cm -2 was found at mid gap region depending on the crystallization temperature. The surface morphology was investigated by atomic force microscope (AFM). The study showed the potential of SBT for application in metal- ferroelectric-silicon nonvolatile memory devices. (author)

  14. Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-03-15

    The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

  15. Structural evolution and growth mechanisms of RF-magnetron sputter-deposited hydroxyapatite thin films on the basis of unified principles

    Science.gov (United States)

    Ivanova, Anna A.; Surmeneva, Maria A.; Surmenev, Roman A.; Depla, Diederik

    2017-12-01

    The structural features of RF-magnetron sputter-deposited hydroxyapatite (HA) coatings are investigated in order to reveal the effect of the working gas composition and the sample position of the substrate relative to the target erosion zone. The film properties were observed to change as a result of bombardment with energetic ions. XRD analysis of the coated substrates indicates that with the increase of the ion-to-atom ratio, the fiber texture changes from a mixed (11 2 bar 2) + (0002) over (0002) orientation, finally reaching a (30 3 bar 0) out-of-plane orientation at high ion-to-atom ratios. TEM reveals that the microstructure of the HA coating consists of columnar grains and differs with the coating texture. The contribution of Ji/Ja to the development of microstructure and texture of the HA coating is schematically represented and discussed. The obtained results may contribute substantially to the progress of research into the development of HA coatings with tailored properties, and these coatings may be applied on the surfaces of metal implants used in bone surgery.

  16. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil

    2016-01-01

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10"-1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10"-3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10"-4 Ω"-1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  17. Transparent Conductive In and Ga Doped ZnO/Cu Bi-Layered Films Deposited by DC and RF Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Hyun-Joo; Song, Young-Hwan; Oh, Jung-Hyun; Heo, Sung-Bo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

    2016-06-15

    In- and Ga-doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered poly-carbonate substrates with RF magnetron sputtering and the effects of the Cu buffer layer on the optical and electrical properties of the films were investigated. The IGZO single layer films exhibited an electrical resistivity of 1.2×10{sup -}1 Ω cm while the IGZO/Cu bi-layered films exhibited a lower resistivity of 1.6×10{sup -}3 Ω cm. With respect to optical properties, the optical band gap of the IGZO films appeared to decrease as a result of an increasing carrier concentration due to the Cu buffer layer. In addition, the RMS roughness (8.2 nm) of the IGZO films also decreased to 6.8 nm by a Cu buffer layer in AFM observation. Although the optical transmittance in the range of visible wavelengths was deteriorated by the Cu buffer layer, the IGZO films with a 5 nm thick Cu buffer layer exhibited a higher figure of merit of 2.6×10{sup -}4 Ω{sup -}1 compared with the IGZO single layer films due to enhanced optoelectrical performance.

  18. Dependence of beam emittance on plasma electrode temperature and rf-power, and filter-field tuning with center-gapped rod-filter magnets in J-PARC rf-driven H− ion source

    International Nuclear Information System (INIS)

    Ueno, A.; Koizumi, I.; Ohkoshi, K.; Ikegami, K.; Takagi, A.; Yamazaki, S.; Oguri, H.

    2014-01-01

    The prototype rf-driven H − ion-source with a nickel plated oxygen-free-copper (OFC) plasma chamber, which satisfies the Japan Proton Accelerator Research Complex (J-PARC) 2nd stage requirements of a H − ion beam current of 60 mA within normalized emittances of 1.5 π mm mrad both horizontally and vertically, a flat top beam duty factor of 1.25% (500 μs × 25 Hz) and a life-time of more than 50 days, was reported at the 3rd international symposium on negative ions, beams, and sources (NIBS2012). The experimental results of the J-PARC ion source with a plasma chamber made of stainless-steel, instead of nickel plated OFC used in the prototype source, are presented in this paper. By comparing these two sources, the following two important results were acquired. One was that the about 20% lower emittance was produced by the rather low plasma electrode (PE) temperature (T PE ) of about 120 °C compared with the typically used T PE of about 200 °C to maximize the beam current for the plasma with the abundant cesium (Cs). The other was that by using the rod-filter magnets with a gap at each center and tuning the gap-lengths, the filter-field was optimized and the rf-power necessary to produce the J-PARC required H − ion beam current was reduced typically 18%. The lower rf-power also decreases the emittances

  19. Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

    Energy Technology Data Exchange (ETDEWEB)

    Kusaka, Kazuya, E-mail: kusaka@tokushima-u.ac.jp [Institute of Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Maruoka, Yutaka, E-mail: ymaruoka1116@gmail.com [Graduate School of Advanced Technology and Science, Tokushima University, 2-1, Minamijosanjima, Tokushima, Tokushima 7708506 (Japan); Matsue, Tatsuya, E-mail: tmatsue@mat.niihama-nct.ac.jp [Department of Environmental Materials Engineering National Institute of Technology, NIIHAMA College, 7-1, Yakumo-cho, Niihama, Ehime 7928580 (Japan)

    2016-05-15

    Zinc oxide (ZnO) films were deposited on a soft polyimide sheet substrate by radio frequency sputtering with a ZnO powder target, and the films' crystal orientations and residual stress were investigated using x-ray diffraction as a function of substrate temperature. C-axis oriented ZnO films were achieved using this ZnO powder target method. The ZnO films exhibited high compressive residual stresses between −0.7 and −1.4 GPa. Finally, the authors examined the strength of the obtained film by applying tensile bending loads. No cracks were observed on the surfaces of the ZnO films after a bending test using cylinders with diameters >25 mm. After a bending test using a cylinder with a diameter of 19 mm, large cracks were formed on the films. Therefore, the authors concluded that the tensile bending strength of the obtained films was greater than ∼420 MPa.

  20. Advanced in-situ control for III-nitride RF power device epitaxy

    Science.gov (United States)

    Brunner, F.; Zettler, J.-T.; Weyers, M.

    2018-04-01

    In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

  1. ADX: A high Power Density, Advanced RF-Driven Divertor Test Tokamak for PMI studies

    Science.gov (United States)

    Whyte, Dennis; ADX Team

    2015-11-01

    The MIT PSFC and collaborators are proposing an advanced divertor experiment, ADX; a divertor test tokamak dedicated to address critical gaps in plasma-material interactions (PMI) science, and the world fusion research program, on the pathway to FNSF/DEMO. Basic ADX design features are motivated and discussed. In order to assess the widest range of advanced divertor concepts, a large fraction (>50%) of the toroidal field volume is purpose-built with innovative magnetic topology control and flexibility for assessing different surfaces, including liquids. ADX features high B-field (>6 Tesla) and high global power density (P/S ~ 1.5 MW/m2) in order to access the full range of parallel heat flux and divertor plasma pressures foreseen for reactors, while simultaneously assessing the effect of highly dissipative divertors on core plasma/pedestal. Various options for efficiently achieving high field are being assessed including the use of Alcator technology (cryogenic cooled copper) and high-temperature superconductors. The experimental platform would also explore advanced lower hybrid current drive and ion-cyclotron range of frequency actuators located at the high-field side; a location which is predicted to greatly reduce the PMI effects on the launcher while minimally perturbing the core plasma. The synergistic effects of high-field launchers with high total B on current and flow drive can thus be studied in reactor-relevant boundary plasmas.

  2. A systems study of an RF power source for a 1 TeV next linear collider based upon the relativistic-klystron two-beam accelerator

    International Nuclear Information System (INIS)

    Yu, S.; Goffeney, N.; Deadrick, F.

    1994-11-01

    A systems study, including physics, engineering and costing, has been conducted to assess the feasibility of a relativistic-klystron two-beam-accelerator (RK-TBA) system as a RF power source candidate for a 1 TeV linear collider. Several key issues associated with a realizable RK-TBA system have been addressed, and corresponding schemes have been developed and examined quantitatively. A point design example has been constructed to present a concrete conceptual design which has acceptable transverse and longitudinal beam stability properties. The overall efficiency of RF production for such a power source is estimated to be 36%, and the cost of the full system is estimated to be less than 1 billion dollars

  3. Design, Fabrication and High Power RF Test of a C-band Accelerating Structure for Feasibility Study of the SPARC photo-injector energy upgrade

    CERN Document Server

    Alesini, D.; Di Pirro, G.; Di Raddo, R.; Ferrario, M.; Gallo, A.; Lollo, V.; Marcellini, F.; Higo, T.; Kakihara, K.; Matsumoto, S.; Campogiani, G.; Mostacci, A.; Palumbo, L.; Persichelli, S.; Spizzo, V.; Verdú-Andrés, S.

    2011-01-01

    The energy upgrade of the SPARC photo-injector from 160 to more than 260 MeV will be done by replacing a low gradient 3m S-Band structure with two 1.4m high gradient C-band structures. The structures are travelling wave, constant impedance sections, have symmetric waveguide input couplers and have been optimized to work with a SLED RF input pulse. A prototype with a reduced number of cells has been fabricated and tested at high power in KEK (Japan) giving very good performances in terms of breakdown rates (10^6 bpp/m) at high accelerating gradient (>50 MV/m). The paper illustrates the design criteria of the structures, the fabrication procedure and the high power RF test results.

  4. Improvement of In-Flight Alumina Spheroidization Process Using a Small Power Argon DC-RF Hybrid Plasma Flow System by Helium Mixture

    Science.gov (United States)

    Takana, Hidemasa; Jang, Juyong; Igawa, Junji; Nakajima, Tomoki; Solonenko, Oleg P.; Nishiyama, Hideya

    2011-03-01

    For the further improvement of in-flight alumina spheroidization process with a low-power direct-current radiofrequency (DC-RF) hybrid plasma flow system, the effect of a small amount of helium gas mixture in argon main gas and also the effect of increasing DC nozzle diameter on powder spheroidization ratio have been experimentally clarified with correlating helium gas mixture percentage, plasma enthalpy, powder in-flight velocity, and temperature. The alumina spheroidization ratio increases by helium gas mixture as a result of enhancement of plasma enthalpy. The highest spheroidization ratio is obtained by 4% mixture of helium in central gas with enlarging nozzle diameter from 3 to 4 mm, even under the constant low input electric power given to a DC-RF hybrid plasma flow system.

  5. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  6. RF power diagnostics and control on the DIII-D, 4 MW 30--120 MHz fast wave current drive system (FWCD)

    International Nuclear Information System (INIS)

    Ferguson, S.W.; Allen, J.C.; Callis, R.W.; Cary, W.P.; Harris, T.E.

    1995-10-01

    The Fast Wave Current Drive System uses three 2 MW transmitters to drive three antennas inside the DIII-D vacuum vessel. This paper describes the diagnostics for this system. The diagnostics associated with the General Atomics Fast Wave Current Drive System allow the system tuning to be analyzed and modified on a between shot basis. The transmitters can be exactly tuned to match the plasma with only one tuning shot into the plasma. This facilitates maximum rf power utilization

  7. Multiplying probe for accurate power measurements on an RF driven atmospheric pressure plasma jet applied to the COST reference microplasma jet

    International Nuclear Information System (INIS)

    Beijer, P A C; Sobota, A; Van Veldhuizen, E M; Kroesen, G M W

    2016-01-01

    In this paper a new multiplying probe for measuring the power dissipated in a miniature capacitively coupled, RF driven, atmospheric pressure plasma jet (μAPPJ—COST Reference Microplasma Jet—COST RMJ) is presented. The approach aims for substantially higher accuracy than provided by traditionally applied methods using bi-directional power meters or commercially available voltage and current probes in conjunction with digitizing oscilloscopes. The probe is placed on a miniature PCB and designed to minimize losses, influence of unknown elements, crosstalk and variations in temperature. The probe is designed to measure powers of the order of magnitude of 0.1–10 W. It is estimated that it measures power with less than 2% deviation from the real value in the tested power range. The design was applied to measure power dissipated in COST-RMJ running in helium with a small addition of oxygen. (paper)

  8. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  9. Evaluation of effective energy deposition in test fuel during power burst experiment in NSRR

    International Nuclear Information System (INIS)

    Ohnishi, Nobuaki; Inabe, Teruo

    1982-01-01

    In an inpile experiment to study the fuel behavior under reactivity-initiated accident conditions, it is of great importance to understand the time-dependent characteristics of the energy deposited in the test fuel by burst power. The evaluation of the time-dependent energy deposition requires the knowledge of the fission rates and energy deposition per fission in the test fuel, both as a function of time. In the present work, the authors attempted to evaluate the relative fission rate change in the test fuel subjected to the power burst testing in the NSRR through the measurements and analyses of the fission power changes in the NSRR. Utilizing a micro fission chamber and a conventional larger fission chamber, they successfully measured the reactor fission power change ranging over a dozen of decades in magnitude and a thousand seconds in time. The measured power transient agreed quite well with calculated results. In addition, the time-dependent energy deposition per fission in the test fuel including the energy contribution from the driver core was analytically evaluated. The analyses indicate that the energy of about 175 MeV/fission is promptly deposited in the test fuel and that the additional energy of about 11 MeV is deposited afterwards. Finally the fractions of energy deposited in the test fuel until various times after power burst were determined by coupling the time-dependent relative fissions and energy deposition per fission in the test fuel. The prompt energy deposition ranges from about 50 to 80% of the total energy deposition for the reactivity insertion between 1.5 and 4.7 $, and the remaining is the delayed energy deposition. (author)

  10. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  11. A minimization procedure for estimating the power deposition and heat transport from the temperature response to auxiliary power modulation

    International Nuclear Information System (INIS)

    Eester, Dirk van

    2004-01-01

    A method commonly used for determining where externally launched power is absorbed inside a tokamak plasma is to examine the temperature response to modulation of the launched power. Strictly speaking, this response merely provides a first good guess of the actual power deposition rather than the deposition profile itself: not only local heat sources but also heat losses and heat wave propagation affect the temperature response at a given position. Making use of this, at first sight non-desirable, effect modulation becomes a useful tool for conducting transport studies. In this paper a minimization method based on a simple conduction-convection model is proposed for deducing the power deposition and transport characteristics from the experimentally measured (electron) energy density response to a modulation of the auxiliary heating power. An L-mode JET example illustrates the potential of the technique

  12. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  13. Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-An [Department of Mechanical Engineering, National Central University, Taiwan (China); Lin, Jing-Chie, E-mail: jclincom@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Taiwan (China); Institute of Material Science and Engineering, National Central University, Taiwan (China); Chang, Yu-Fong [Department of Mechanical Engineering, National Central University, Taiwan (China); Chyou, San-Der [Power Research Institute, Taiwan Power Company, Taiwan (China); Peng, Kun-Cheng [Department of Materials Science and Engineering, Mingchi University of Technology, Taiwan (China)

    2012-06-01

    Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E{sub g}) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 Multiplication-Sign 10{sup -2} {Omega} cm to 3.29 Multiplication-Sign 10{sup -3} {Omega} cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV-visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier

  14. Study of the adhesive properties versus stability/aging of hernia repair meshes after deposition of RF activated plasma polymerized acrylic acid coating

    International Nuclear Information System (INIS)

    Rivolo, Paola; Nisticò, Roberto; Barone, Fabrizio; Faga, Maria Giulia; Duraccio, Donatella; Martorana, Selanna; Ricciardi, Serena; Magnacca, Giuliana

    2016-01-01

    In order to confer adhesive properties to commercial polypropylene (PP) meshes, a surface plasma-induced deposition of poly-(acrylic acid) (PPAA) is performed. Once biomaterials were functionalized, different post-deposition treatments (i.e. water washing and/or thermal treatments) were investigated with the aim of monitoring the coating degradation (and therefore the loss of adhesion) after 3 months of aging in both humid/oxidant (air) and inert (nitrogen) atmospheres. A wide physicochemical characterization was carried out in order to evaluate the functionalization effectiveness and the adhesive coating homogeneity by means of static water drop shape analysis and several spectroscopies (namely, FTIR, UV–Visible and X-ray Photoemission Spectroscopy). The modification of the adhesion properties after post-deposition treatments as well as aging under different storage atmospheres were investigated by means of Atomic Force Microscopy (AFM) used in Force/Distance (F/D) mode. This technique confirms itself as a powerful tool for unveiling the surface adhesion capacity as well as the homogeneity of the functional coatings along the fibers. Results obtained evidenced that post-deposition treatments are mandatory in order to remove all oligomers produced during the plasma-treatment, whereas aging tests evidenced that these devices can be simply stored in presence of air for at least three months without a meaningful degradation of the original properties. - Highlights: • Plasma polymerized surface functionalization of hernia-repair meshes was used to confer adhesive properties. • The stability of the adhesive coating was verified under different post-deposition conditions. • The use of AFM in F/D mode was selected to monitor the coating degradation.

  15. Study of the adhesive properties versus stability/aging of hernia repair meshes after deposition of RF activated plasma polymerized acrylic acid coating

    Energy Technology Data Exchange (ETDEWEB)

    Rivolo, Paola [Politecnico di Torino, Department of Applied Science and Technology, C.so Duca degli Abruzzi 24, 10129 Torino (Italy); Nisticò, Roberto, E-mail: roberto.nistico@unito.it [University of Torino, Department of Chemistry and NIS Centre, Via P. Giuria 7, 10125 Torino (Italy); Barone, Fabrizio [University of Torino, Department of Chemistry and NIS Centre, Via P. Giuria 7, 10125 Torino (Italy); Faga, Maria Giulia; Duraccio, Donatella [CNR-IMAMOTER, Strada delle Cacce 73, 10135 Torino (Italy); Martorana, Selanna [Herniamesh S.r.l., Via F.lli Meliga 1/C, 10034 Chivasso (Italy); Ricciardi, Serena [Politecnico di Torino, Department of Applied Science and Technology, C.so Duca degli Abruzzi 24, 10129 Torino (Italy); Magnacca, Giuliana [University of Torino, Department of Chemistry and NIS Centre, Via P. Giuria 7, 10125 Torino (Italy)

    2016-08-01

    In order to confer adhesive properties to commercial polypropylene (PP) meshes, a surface plasma-induced deposition of poly-(acrylic acid) (PPAA) is performed. Once biomaterials were functionalized, different post-deposition treatments (i.e. water washing and/or thermal treatments) were investigated with the aim of monitoring the coating degradation (and therefore the loss of adhesion) after 3 months of aging in both humid/oxidant (air) and inert (nitrogen) atmospheres. A wide physicochemical characterization was carried out in order to evaluate the functionalization effectiveness and the adhesive coating homogeneity by means of static water drop shape analysis and several spectroscopies (namely, FTIR, UV–Visible and X-ray Photoemission Spectroscopy). The modification of the adhesion properties after post-deposition treatments as well as aging under different storage atmospheres were investigated by means of Atomic Force Microscopy (AFM) used in Force/Distance (F/D) mode. This technique confirms itself as a powerful tool for unveiling the surface adhesion capacity as well as the homogeneity of the functional coatings along the fibers. Results obtained evidenced that post-deposition treatments are mandatory in order to remove all oligomers produced during the plasma-treatment, whereas aging tests evidenced that these devices can be simply stored in presence of air for at least three months without a meaningful degradation of the original properties. - Highlights: • Plasma polymerized surface functionalization of hernia-repair meshes was used to confer adhesive properties. • The stability of the adhesive coating was verified under different post-deposition conditions. • The use of AFM in F/D mode was selected to monitor the coating degradation.

  16. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    International Nuclear Information System (INIS)

    Pinzón, M.J.; Alfonso, J.E.; Olaya, J.J.; Cubillos, G.I.; Romero, E.

    2014-01-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N 2 /O 2 , with a flow ratio ΦN 2 /ΦO 2 of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO 2 ) and body-centered cubic (Zr 2 ON 2 ). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films

  17. Influence of the electrical power applied to the target on the optical and structural properties of ZrON films produced via RF magnetron sputtering in a reactive atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pinzón, M.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Grupo de Ciencia de Materiales y Superficies, Departamento de Física, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cubillos, G.I.; Romero, E. [Grupo de Materiales y Procesos Químicos, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2014-12-01

    The influence of the variation of electrical power applied to the target on the morphology and optical properties of zirconium oxynitride - zirconium oxide (ZrON) films deposited via RF magnetron sputtering on common glass substrates in a reactive atmosphere of N{sub 2}/O{sub 2}, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 was investigated. The crystallographic structure of the films was established through X-ray diffraction (XRD), the morphology was evaluated through scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the optical behavior was evaluated through transmittance measurements. The XRD analysis showed that the films grew with mixed crystalline structures: monoclinic (ZrO{sub 2}) and body-centered cubic (Zr{sub 2}ON{sub 2}). SEM analysis showed that the films grew with a homogeneous morphology, and AFM results established that as the electrical power applied to the target increased, there were changes in the grain size and the roughness of the films. The thickness, refractive index, and absorption coefficient of the films were calculated using the values of the transmittance through the Swanepoel method. Additionally, the energy band gap was determined via analysis of the free interference region. - Highlights: • We growth zirconium oxynitride films by RF magnetron sputtering in reactive atmosphere. • We determine the influence of the electrical power applied at the target in optical and structural properties. • We determine the crystallite size, grain size and roughness of the zirconium oxynitride films. • We determine the optical parameters such refractive index of the zirconium oxynitride films through Swanepoel method. • We calculated the absorption coefficient and optical band gap of the zirconium oxynitride films.

  18. Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA

    International Nuclear Information System (INIS)

    Jing Yiou; Lu Huaxiang

    2013-01-01

    This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier (LNA), current-reuse V—I converter, active double balanced mixer and transimpedance amplifier for short range device (SRD) applications. With the proposed current-reuse LNA, the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices. The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm 2 . Operating in 433 MHz band, the measurement results show the RF front-end achieves a conversion gain of 29.7 dB, a double side band noise figure of 9.7 dB, an input referenced third intercept point of −24.9 dBm with only 1.44 mA power consumption from 1.8 V supply. Compared to other reported front-ends, it has an advantage in power consumption. (semiconductor integrated circuits)

  19. Danish Experiences with Deposit Probe Measurements in Grate and Pulverized Fuel Biomass Power Boilers

    DEFF Research Database (Denmark)

    Hansen, Stine Broholm; Jensen, Peter Arendt; Jappe Frandsen, Flemming

    2012-01-01

    Several measuring campaigns with focus on deposition behavior have been conducted at full-scale power plants firing biomass in Denmark. These campaigns have been reviewed in this work. The focus is the obtained experiences on deposit formation, shedding and chemistry. When comparing results from...

  20. Influence of laser power on microstructure of laser metal deposited 17-4 ph stainless steel

    CSIR Research Space (South Africa)

    Adeyemi, AA

    2017-09-01

    Full Text Available The influence of laser power on the microstructure of 17-4 PH stainless steel produced by laser metal deposition was investigated. Multiple-trackof 17-4 stainless steel powder was deposited on 316 stainless steel substrate using laser metal...

  1. Remote RF Battery Charging

    NARCIS (Netherlands)

    Visser, H.J.; Pop, V.; Op het Veld, J.H.G.; Vullers, R.J.M.

    2011-01-01

    The design of a remote RF battery charger is discussed through the analysis and design of the subsystems of a rectenna (rectifying antenna): antenna, rectifying circuit and loaded DC-to-DC voltage (buck-boost) converter. Optimum system power generation performance is obtained by adopting a system

  2. Rf system specifications for a linear accelerator

    International Nuclear Information System (INIS)

    Young, A.; Eaton, L.E.

    1992-01-01

    A linear accelerator contains many systems; however, the most complex and costly is the RF system. The goal of an RF system is usually simply stated as maintaining the phase and amplitude of the RF signal within a given tolerance to accelerate the charged particle beam. An RF system that drives a linear accelerator needs a complete system specification, which should contain specifications for all the subsystems (i.e., high-power RF, low-level RF, RF generation/distribution, and automation control). This paper defines a format for the specifications of these subsystems and discusses each RF subsystem independently to provide a comprehensive understanding of the function of each subsystem. This paper concludes with an example of a specification spreadsheet allowing one to input the specifications of a subsystem. Thus, some fundamental parameters (i.e., the cost and size) of the RF system can be determined

  3. ISR RF cavities

    CERN Multimedia

    1983-01-01

    In each ISR ring the radiofrequency cavities were installed in one 9 m long straight section. The RF system of the ISR had the main purpose to stack buckets of particles (most of the time protons)coming from the CPS and also to accelerate the stacked beam. The installed RF power per ring was 18 kW giving a peak accelerating voltage of 20 kV. The system had a very fine regulation feature allowing to lower the voltage down to 75 V in a smooth and well controlled fashion.

  4. Effect of water side deposits on the energy performance of coal fired thermal power plants

    International Nuclear Information System (INIS)

    Bhatt, M. Siddhartha

    2006-01-01

    This paper presents the effects of water side deposits in the 210 MW coal fired thermal power plant components (viz., boiler, turbine, feed water heaters, condensers and lube oil coolers) on the energy efficiency of these components and that of the overall system at 100% maximum continuous rating (MCR). The origin, composition and rate of build up of deposits on the water side are presented. A linear growth rate of deposits is assumed for simplicity. The effects of the reduction in heat transfer, increased pressure drop and increased pumping power/reduced power output in the components are quantified in the form of curve fits as functions of the deposit thickness (μm). The reduction in heat transfer in the boiler components is in the range of 0.2-2.0% under normal scaling. The increased pumping power is of the order of 0.6-7.6% in the boiler components, 29% in the BFP circuit, 26% in the LPH circuit, 21% in the HPH circuit and 18% in the lube oil cooler circuits. The effects on the overall coal fired plant is quantified through functional relations between the efficiencies and the notional deposit thickness. The sensitivity indices to the notional deposit thickness are: boiler efficiency: -0.0021% points/μm, turbine circuit efficiency: -0.0037% points/μm, auxiliary power efficiency: -0.00129% points/μm, gross overall efficiency: -0.0039% points/μm and net overall efficiency: -0.0040% points/μm. The overall effect of scale build up is either increased power input of ∼68 kW/μm (at a constant power output) or decreased power output ∼25 kW/μm (at a constant power input). Successful contaminant control techniques are highlighted. Capacity reduction effects due to water side deposits are negligible

  5. Discussion of high brightness rf linear accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1987-01-01

    The fundamental aspects of high-brightness rf linacs are outlined, showing the breadth and complexity of the technology and indicating that synergism with advancements in other areas is important. Areas of technology reviewed include ion sources, injectors, rf accelerator structures, beam dynamics, rf power, and automatic control

  6. Linear collider RF: Introduction and summary

    International Nuclear Information System (INIS)

    Palmer, R.B.

    1995-01-01

    The relation of acceleration gradient with RF frequency is examined, and approximate general RF power requirements are derived. Considerations of efficiency and cost are discussed. RF Sources, presented at the conference, are reviewed. Overall efficiencies of the linear collider proposals are compared. copyright 1995 American Institute of Physics

  7. High power pulsed magnetron sputtering: A method to increase deposition rate

    International Nuclear Information System (INIS)

    Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-01-01

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

  8. The FELIX RF system

    International Nuclear Information System (INIS)

    Manintveld, P.; Delmee, P.F.M.; Geer, C.A.J. van der; Meddens, B.J.H.; Meer, A.F.G. van der; Amersfoort, P.W. van

    1992-01-01

    The performance of the RF system for the Free Electron Laser for Infrared eXperiments (FELIX) is discussed. The RF system provides the input power for a triode gun (1 GHz, 100 W), a prebuncher (1 GHz, 10 kW), a buncher (3 GHz, 20 MW), and two linacs (3 GHz, 8 MW each). The pulse length in the system is 20 μs. The required electron beam stability imposes the following demands on the RF system: a phase stability better than 0.3 deg for the 1 GHz signals and better than 1 deg for the 3 GHz signals; the amplitude stability has to be better than 1% for the 1 GHz and better than 0.2% for the 3 GHz signals. (author) 3 refs.; 6 figs

  9. Pulsed rf operation analysis

    International Nuclear Information System (INIS)

    Puglisi, M.; Cornacchia, M.

    1981-01-01

    The need for a very low final amplifier output impedance, always associated with class A operation, requires a very large power waste in the final tube. The recently suggested pulsed rf operation, while saving a large amount of power, increases the inherent final amplifier non linearity. A method is presented for avoiding the large signal non linear analysis and it is shown how each component of the beam induced voltage depends upon all the beam harmonics via some coupling coefficients which are evaluated

  10. Dynamics of r.f. production of Stellarator plasmas in the ion cyclotron range of frequency

    International Nuclear Information System (INIS)

    Moiseenko, V.E.; Lysoivan, A.I.; Kasilov, S.V.; Plyusnin, V.V.

    1995-01-01

    The present study investigated numerically the process of r.f. production of plasma in the URAGAN-3M torsatron in the frequency range below the ion cyclotron frequency (ω ci ). The dynamics of r.f. plasma build-up at the stages of neutral gas burnout and plasma heating were studied using a zero-dimensional transport code, in which the plasma confinement law was determined by large helical device scaling. Two models for input r.f. power were used. In the first case, the r.f. power absorbed by the electrons was computed by a one-dimensional r.f. code solving Maxwell's boundary problem equations. The mechanisms of electron heating through direct excitation of the slow wave (SW) by antennae as well as the conversion of fast wave (FW) into SW in the vicinity of Alfven resonance (scenario of Alfven heating) were taken into account in the computations. In the second case, an 'ideal' model of r.f. power deposition onto the electrons as a linear function of plasma density was employed. A noticeable difference in plasma production dynamics computed for these two cases was found. Better agreement with experimental data obtained from the URAGAN-3M torsatron was found for the first case resulting from combination of the one-dimensional r.f. and zero-dimensional transport codes. ((orig.))

  11. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  12. Reliability impact of RF tube technology for the NPB

    International Nuclear Information System (INIS)

    Bueck, J.C.

    1989-01-01

    Two reliability options, redundancy and operating margin, are examined to determine their effect on power system configurations using RF tube technology (klystron and klystrode) powered Neutral Particle Beam weapons. Redundance is addressed by providing an additional identical RF tube to the tubes required to power an accelerator RF element (DTL section, RFQ, or CCL). RF elements do not share RF power with other RF elements. Operating margin provides increased reliability by sizing the RF tubes such that tube operating levels may be increased compensate for the loss of a tube. It is shown that power system mass is affected by the choice of reliability measures, that higher power tubes coupled with higher power RF elements may mitigate mass increases, and that redundancy appears preferable to operating margin as a method of improving RF system reliability

  13. Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

    2005-01-01

    Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

  14. Microscopic investigation of RF surfaces of 3 GHz niobium accelerator cavities following RF processing

    International Nuclear Information System (INIS)

    Graber, J.; Barnes, P.; Flynn, T.; Kirchgessner, J.; Knobloch, J.; Moffat, D.; Muller, H.; Padamsee, H.; Sears, J.

    1993-01-01

    RF processing of Superconducting accelerating cavities is achieved through a change in the electron field emission (FE) characteristics of the RF surface. The authors have examined the RF surfaces of several single-cell 3 GHz cavities, following RF processing, in a Scanning Electron Microscope (SEM). The RF processing sessions included both High Peak Power (P ≤ 50 kW) pulsed processing, and low power (≤ 20 W) continuous wave processing. The experimental apparatus also included a thermometer array on the cavity outer wall, allowing temperature maps to characterize the emission before and after RF processing gains. Multiple sites have been located in cavities which showed improvements in cavity behavior due to RF processing. Several SEM-located sites can be correlated with changes in thermometer signals, indicating a direct relationship between the surface site and emission reduction due to RF processing. Information gained from the SEM investigations and thermometry are used to enhance the theoretical model of RF processing

  15. Characterization of In-Flight Processing of Alumina Powder Using a DC-RF Hybrid Plasma Flow System at Constant Low Operating Power

    Science.gov (United States)

    Nishiyama, H.; Onodera, M.; Igawa, J.; Nakajima, T.

    2009-12-01

    The aim of this study is to provide the optimum operating conditions for enhancing in-flight alumina particle heating as much as possible for particle spheroidization and aggregation of melted particles using a DC-RF hybrid plasma flow system even at constant low operating power based on the thermofluid considerations. It is clarified that the swirl flow and higher operating pressure enhance the particle melting and aggregation of melted particles coupled with increasing gas temperature downstream of a plasma uniformly in the radial direction at constant electrical discharge conditions.

  16. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers

    Energy Technology Data Exchange (ETDEWEB)

    Huang Zhanyun; Chen Min; Chen Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China); Pan Shirong, E-mail: stscdh@mail.sysu.edu.c [Artificial Heart Lab, the 1st Affiliate Hospital of Sun Yat-Sen University, Guangzhou 510080 (China)

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  17. Computer-aided design of the RF-cavity for a high-power S-band klystron

    Science.gov (United States)

    Kant, D.; Bandyopadhyay, A. K.; Pal, D.; Meena, R.; Nangru, S. C.; Joshi, L. M.

    2012-08-01

    This article describes the computer-aided design of the RF-cavity for a S-band klystron operating at 2856 MHz. State-of-the-art electromagnetic simulation tools SUPERFISH, CST Microwave studio, HFSS and MAGIC have been used for cavity design. After finalising the geometrical details of the cavity through simulation, it has been fabricated and characterised through cold testing. Detailed results of the computer-aided simulation and cold measurements are presented in this article.

  18. Racetrack microtron rf system

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Keffeler, D.R.

    1985-01-01

    The rf system for the National Bureau of Standards (NBS)/Los Alamos cw racetrack microtron is described. The low-power portion consists of five 75-W amplifers that drive two input ports in each of two chopper deflection cavities and one port in the prebuncher cavity. A single 500-kW klystron drives four separate 2380-MHz cavity sections: the two main accelerator sections, a capture section, and a preaccelerator section. The phases and amplitudes in all cavities are controlled by electronic or electromechanical controls. The 1-MW klystron power supply and crowbar system were purchased as a unit; several modifications are described that improve power-supply performance. The entire rf system has been tested and shipped to the NBS, and the chopper-buncher system has been operated with beam at the NBS. 5 refs., 2 figs

  19. VEPP-4 electron-positron storage ring RF-system on the base of gyrocon-power SHF-generator with a debunched relativistic beam

    International Nuclear Information System (INIS)

    Budker, G.I.; Gaponov, V.A.; Gorniker, Eh.I.

    1982-01-01

    A gyrocon, SHF-generator, is described in which the energy of debunched relativistic electron beam is converted to the energy of electromagnetic oscillations. The gyrocon is intended for supplying the VEPP-4 accelerating resonators. A high-voltage accelerator is used as an electron source. An electron beam is scanned by a rotating magnetic field of the resonator and in different points of the orbit circumscribed by the beam and is injected into the outlet resonator. The resonator represents a ring-form waveguide with slots for the beam passage. A travelling wave, whose field decelerates electrons, is excited in the resonator tuned in to the scanning frequency, converting the beam power to RF-power which is taken off through the energy outlets. The design parameters of the gyrocon are as follows: electron efficiency > 95%, the general efficiency > 80%, amplification factor 23 dB, output power = 5 MW. Results of preliminary tests of the gyrocon are presented

  20. CANDU fuel deposits and chemistry optimizations. Recent regulatory experience in Canadian Nuclear Power Plants

    International Nuclear Information System (INIS)

    Kameswaran, Ram

    2014-01-01

    Water chemistry of the Primary Heat Transport System (PHT) of CANDU – Pressurised Heavy Water Reactors profoundly influences the transport of corrosion products around the Heat Transport System (HTS), where they can be deposited as crud on steam generators, feeder pipes and on the fuel. Fuel cladding can be covered with deposits which have precipitated from the coolant as a result of temperature changes or non-optimal coolant pH. Precipitation of deposits in-core must be avoided as far as possible, as it leads to fouling of the fuel, loss of heat transfer efficiency, and increased radiation fields. In the recent years a Canadian NPP experienced increased instances of black deposits being observed on fuel bundles discharged from one of the units. The black deposits were initially observed in 2008 during in-bay fuel inspections. Since then it has been determined that all the discharged fuel bundles have black deposits on them and that observed deposits have been increasing in size (thickness and surface area). This negative trend has persisted through to 2012, when one of fuel bundles was observed with significantly larger deposit than previously seen. Initial analysis of the deposit indicated it to be iron oxide (magnetite). Flow Accelerated Corrosion (FAC) of carbon steel feeder pipes is the primary source of iron, which deposits as magnetite on HTS surfaces. The black deposits have predominantly been located immediately downstream of the bearing pads of the fuel bundle. Deposits have also tended to form on the bottom-downstream quadrant of the fuel bundles. The deposits were most prevalent in low power channels, but some deposits have been observed on high power channels. It was reported by the utility that the PHT system chemistry has been maintained in specification for most of the time during normal operation but the chemistry control during outages was inadequate. Due to design constraints, purification circuit was not available during outages and ion

  1. Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

    Science.gov (United States)

    Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

    2009-11-01

    Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

  2. The role of power plant atmospheric emissions in the deposition of nitrogen to the Chesapeake Bay

    International Nuclear Information System (INIS)

    Miller, P.E.

    1994-01-01

    The Maryland Power Plant Research Program (PPRP) has sponsored research on several aspects of atmospheric nitrogen emissions, source attribution, deposition estimation and impact assessment since the mid-eighties. The results of these studies will be presented and discussed in the context of power plant emissions control impact on nitrogen loadings to the Chesapeake Bay and watershed. Information needs with respect to power plant contribution and emission control policy will be identified and discussed from the perspective of PPRP

  3. SnO{sub 2}:F thin films deposited by RF magnetron sputtering: effect of the SnF{sub 2} amount in the target on the physical properties

    Energy Technology Data Exchange (ETDEWEB)

    De Moure F, F. [universidad Autonoma de Queretaro, Facultad de Quimica Materiales, Queretaro 76010, Queretaro (Mexico); Guillen C, A.; Nieto Z, K. E.; Quinones G, J. G.; Hernandez H, A.; Melendez L, M.; Olvera, M. de la L., E-mail: fcomoure@hotmail.com [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07360 Mexico D. F. (Mexico)

    2013-08-01

    SnO{sub 2}:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF{sub 2} as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500 C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO{sub 2} and Sn O. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO{sub 2} thin films grown with small SnF{sub 2} content in the target can be considered as candidates for transparent electrodes. (Author)

  4. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    International Nuclear Information System (INIS)

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  5. On the role of energy deposition in triggering SEGR in power MOSFETs

    International Nuclear Information System (INIS)

    Selva, L.E.; Swift, G.M.; Taylor, W.A.; Edmonds, L.D.

    1999-01-01

    Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV·cm 2 /mg. Results are: (1) consistent with Wrobel's oxide breakdown for V DS = 0 volts (for both normal incidence and angle); and (2) when V GS = 0 volts, energy deposited near the Si/SiO 2 interface is more important than the energy deposited deeper in the epi

  6. RF transformer

    Science.gov (United States)

    Smith, James L.; Helenberg, Harold W.; Kilsdonk, Dennis J.

    1979-01-01

    There is provided an improved RF transformer having a single-turn secondary of cylindrical shape and a coiled encapsulated primary contained within the secondary. The coil is tapered so that the narrowest separation between the primary and the secondary is at one end of the coil. The encapsulated primary is removable from the secondary so that a variety of different capacity primaries can be utilized with one secondary.

  7. Control interlock and monitoring system for 80 KW IOT based RF power amplifier system at 505.812 MHz for Indus-2

    International Nuclear Information System (INIS)

    Kumar, Gautam; Deo, R.K.; Jain, M.K.; Bagre, Sunil; Hannurkar, P.R.

    2013-01-01

    For 80 kW inductive output tube (IOT) based RF power amplifier system at 505.812 MHz for Indus-2, a control, interlock and monitoring system is realized. This is to facilitate proper start-up and shutdown of the amplifier system, monitor various parameters to detect any malfunction during its operation and to bring the system in a safe stage, thereby assuring reliable operation of the amplifier system. This high power amplifier system incorporates interlocks such as cooling interlocks, various voltage and current interlocks and time critical RF interlocks. Processing of operation sequence, cooling interlocks and various voltage and current interlocks have been realized by using Siemens make S7-CPU-315-2DP (CPU) based programmable logic controller (PLC) system. While time critical or fast interlocks have been realized by using Siemens make FPGA based Boolean Co-processor FM-352-5 which operates in standalone mode. Siemens make operating panel OP277 6'' is being used as a human machine interface (HMI) device for command, data, alarm generation and process parameter monitoring. (author)

  8. 5.2-GHz RF Power Harvester in 0.18-/spl mu/m CMOS for Implantable Intraocular Pressure Monitoring

    KAUST Repository

    Ouda, Mahmoud H.

    2013-04-17

    A first fully integrated 5.2-GHz CMOS-based RF power harvester with an on-chip antenna is presented in this paper. The design is optimized for sensors implanted inside the eye to wirelessly monitor the intraocular pressure of glaucoma patients. It includes a five-stage RF rectifier with an on-chip antenna, a dc voltage limiter, two voltage sensors, a low dropout voltage regulator, and MOSCAP based on-chip storage. The chip has been designed and fabricated in a standard 0.18-μm CMOS technology. To emulate the eye environment in measurements, a custom test setup is developed that comprises Plexiglass cavities filled with saline solution. Measurements in this setup show that the proposed chip can be charged to 1 V wirelessly from a 5-W transmitter 3 cm away from the harvester chip. The energy that is stored on the 5-nF on-chip MOSCAP when charged to 1 V is 2.5 nJ, which is sufficient to drive an arbitrary 100-μW load for 9 μs at regulated 0.8 V. Simulated efficiency of the rectifier is 42% at -7 dBm of input power.

  9. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  10. Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

    Science.gov (United States)

    Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

    2018-09-01

    In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

  11. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  12. Characteristics of a high-power RF source of negative hydrogen ions for neutral beam injection into controlled fusion devices

    Energy Technology Data Exchange (ETDEWEB)

    Abdrashitov, G. F.; Belchenko, Yu. I.; Gusev, I. A.; Ivanov, A. A.; Kondakov, A. A.; Sanin, A. L.; Sotnikov, O. Z., E-mail: O.Z.Sotnikov@inp.nsk.su; Shikhovtsev, I. V. [Russian Academy of Sciences, Budker Institute of Nuclear Physics, Siberian Branch (Russian Federation)

    2017-01-15

    An injector of hydrogen atoms with an energy of 0.5–1 MeV and equivalent current of up to 1.5 A for purposes of controlled fusion research is currently under design at the Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. Within this project, a multiple-aperture RF surface-plasma source of negative hydrogen ions is designed. The source design and results of experiments on the generation of a negative ion beam with a current of >1 A in the long-pulse mode are presented.

  13. New Edge Localized Modes at Marginal Input Power with Dominant RF-heating and Lithium-wall Conditioning in EAST

    DEFF Research Database (Denmark)

    Wang, H.; Xu, G.; Guo, H.

    The EAST tokamak has achieved, for the rst time, the ELMy H-mode at a connement improvement factor HITER89P 1:7, with dominant RF heating and active wall conditioning by lithium evaporation and real-time injection of Li powder. During the H-mode phase, a new small-ELM regime has been observed wit......-III ELMy crash enhances the radial electric field Er and turbulence driven Reynolds stress. Furthermore, the lament-like structure of type-III ELMs has clearly been identified as multiple peaks on the ion saturation and floating potential measurements....

  14. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  15. Estimation of Scatterer Diameter by Normalized Power Spectrum of High-Frequency Ultrasonic RF Echo for Assessment of Red Blood Cell Aggregation

    Science.gov (United States)

    Fukushima, Taku; Hasegawa, Hideyuki; Kanai, Hiroshi

    2011-07-01

    Red blood cell (RBC) aggregation, as one of the determinants of blood viscosity, plays an important role in blood rheology, including the condition of blood. RBC aggregation is induced by the adhesion of RBCs when the electrostatic repulsion between RBCs weakens owing to increases in protein and saturated fatty acid levels in blood, excessive RBC aggregation leads to various circulatory diseases. This study was conducted to establish a noninvasive quantitative method for assessment of RBC aggregation. The power spectrum of ultrasonic RF echoes from nonaggregating RBCs, which shows the frequency property of scattering, exhibits Rayleigh behavior. On the other hand, ultrasonic RF echoes from aggregating RBCs contain the components of reflection, which have no frequency dependence. By dividing the measured power spectrum of echoes from RBCs in the lumen by that of echoes from a posterior wall of the vein in the dorsum manus, the attenuation property of the propagating medium and the frequency responses of transmitting and receiving transducers are removed from the former spectrum. RBC aggregation was assessed by the diameter of a scatterer, which was estimated by minimizing the square difference between the measured normalized power spectrum and the theoretical power spectrum. In this study, spherical scatterers with diameters of 5, 11, 15, and 30 µm were measured in basic experiments. The estimated scatterer diameters were close to the actual diameters. Furthermore, the transient change of the scatterer diameters were measured in an in vivo experiment with respect to a 24-year-old healthy male during the avascularization using a cuff. The estimated diameters (12-22 µm) of RBCs during avascularization were larger than the diameters (4-8 µm) at rest and after recirculation. These results show the possibility of the use of the proposed method for noninvasive assessment of RBC aggregation.

  16. RF pulse compression development

    International Nuclear Information System (INIS)

    Farkas, Z.D.; Weaver, J.N.

    1987-10-01

    The body of this paper discusses the theory and some rules for designing a multistage Binary Energy Compressor (BEC) including its response to nonstandard phase coding, describes some proof-of-principle experiments with a couple of low power BECs, presents the design parameters for some sample linear collider rf systems that could possibly use a BEC to advantage and outlines in the conclusion some planned R and D efforts. 8 refs., 26 figs., 4 tabs

  17. RF Pulsed Heating

    Energy Technology Data Exchange (ETDEWEB)

    Pritzkau, David P.

    2002-01-03

    RF pulsed heating is a process by which a metal is heated from magnetic fields on its surface due to high-power pulsed RF. When the thermal stresses induced are larger than the elastic limit, microcracks and surface roughening will occur due to cyclic fatigue. Pulsed heating limits the maximum magnetic field on the surface and through it the maximum achievable accelerating gradient in a normal conducting accelerator structure. An experiment using circularly cylindrical cavities operating in the TE{sub 011} mode at a resonant frequency of 11.424 GHz is designed to study pulsed heating on OFE copper, a material commonly used in normal conducting accelerator structures. The high-power pulsed RF is supplied by an X-band klystron capable of outputting 50 MW, 1.5 {micro}s pulses. The test pieces of the cavity are designed to be removable to allow testing of different materials with different surface preparations. A diagnostic tool is developed to measure the temperature rise in the cavity utilizing the dynamic Q change of the resonant mode due to heating. The diagnostic consists of simultaneously exciting a TE{sub 012} mode to steady-state in the cavity at 18 GHz and measuring the change in reflected power as the cavity is heated from high-power pulsed RF. Two experimental runs were completed. One run was executed at a calculated temperature rise of 120 K for 56 x 10{sup 6} pulses. The second run was executed at a calculated temperature rise of 82 K for 86 x 10{sup 6} pulses. Scanning electron microscope pictures show extensive damage occurring in the region of maximum temperature rise on the surface of the test pieces.

  18. The TESLA RF System

    International Nuclear Information System (INIS)

    Choroba, S.

    2003-01-01

    The TESLA project proposed by the TESLA collaboration in 2001 is a 500 to 800GeV e+/e- linear collider with integrated free electron laser facility. The accelerator is based on superconducting cavity technology. Approximately 20000 superconducting cavities operated at 1.3GHz with a gradient of 23.4MV/m or 35MV/m will be required to achieve the energy of 500GeV or 800GeV respectively. For 500GeV ∼600 RF stations each generating 10MW of RF power at 1.3GHz at a pulse duration of 1.37ms and a repetition rate of 5 or 10Hz are required. The original TESLA design was modified in 2002 and now includes a dedicated 20GeV electron accelerator in a separate tunnel for free electron laser application. The TESLA XFEL will provide XFEL radiation of unprecedented peak brilliance and full transverse coherence in the wavelength range of 0.1 to 6.4nm at a pulse duration of 100fs. The technology of both accelerators, the TESLA linear collider and the XFEL, will be identical, however the number of superconducting cavities and RF stations for the XFEL will be reduced to 936 and 26 respectively. This paper describes the layout of the entire RF system of the TESLA linear collider and the TESLA XFEL and gives an overview of its various subsystems and components

  19. Uncertainty analysis of atmospheric deposition simulation of radiocesium and radioiodine from Fukushima Daiichi Nuclear Power Plant

    Science.gov (United States)

    Morino, Yu; Ohara, Toshimasa; Yumimoto, Keiya

    2014-05-01

    Chemical transport models (CTM) played key roles in understanding the atmospheric behaviors and deposition patterns of radioactive materials emitted from the Fukushima Daiichi nuclear power plant (FDNPP) after the nuclear accident that accompanied the great Tohoku earthquake and tsunami on 11 March 2011. In this study, we assessed uncertainties of atmospheric simulation by comparing observed and simulated deposition of radiocesium (137Cs) and radioiodine (131I). Airborne monitoring survey data were used to assess the model performance of 137Cs deposition patterns. We found that simulation using emissions estimated with a regional-scale (~500 km) CTM better reproduced the observed 137Cs deposition pattern in eastern Japan than simulation using emissions estimated with local-scale (~50 km) or global-scale CTM. In addition, we estimated the emission amount of 137Cs from FDNPP by combining a CTM, a priori source term, and observed deposition data. This is the first use of airborne survey data of 137Cs deposition (more than 16,000 data points) as the observational constraints in inverse modeling. The model simulation driven by a posteriori source term achieved better agreements with 137Cs depositions measured by aircraft survey and at in-situ stations over eastern Japan. Wet deposition module was also evaluated. Simulation using a process-based wet deposition module reproduced the observations well, whereas simulation using scavenging coefficients showed large uncertainties associated with empirical parameters. The best-available simulation reproduced the observed 137Cs deposition rates in high-deposition areas (≥10 kBq m-2) within one order of magnitude. Recently, 131I deposition map was released and helped to evaluate model performance of 131I deposition patterns. Observed 131I/137Cs deposition ratio is higher in areas southwest of FDNPP than northwest of FDNPP, and this behavior was roughly reproduced by a CTM if we assume that released 131I is more in gas phase

  20. Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF Co-sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonghyun; Choi, Wonjoon; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh [Hanyang University, Seoul (Korea, Republic of); Cheong, Hyeonsik [Sogang University, Seoul (Korea, Republic of)

    2006-09-15

    Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF cosputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of {approx}370 nm at room temperature.