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Sample records for rf mems capacitive

  1. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  2. Uncertainty quantification in capacitive RF MEMS switches

    Science.gov (United States)

    Pax, Benjamin J.

    Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

  3. RF-MEMS capacitive switches with high reliability

    Science.gov (United States)

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  4. Using MEMS Capacitive Switches in Tunable RF Amplifiers

    OpenAIRE

    Danson John; Plett Calvin; Tait Niall

    2006-01-01

    A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

  5. Using MEMS Capacitive Switches in Tunable RF Amplifiers

    Directory of Open Access Journals (Sweden)

    Danson John

    2006-01-01

    Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

  6. Novel rf power sensor based on capacitive MEMS technology

    NARCIS (Netherlands)

    Fernandez, L.J.; Visser, Eelke; Sesé, J.; Jansen, Henricus V.; Wiegerink, Remco J.; Flokstra, Jakob

    2003-01-01

    We present the theory, design, fabrication of and first measurements on a novel power for radio frequency (rf) signals, based on capacitive measurements. The novelty of this sensor is thtat it measures the force that is created between the rf signal and a grounded membrande suspended above the line

  7. Experimental Validation of Topology Optimization for RF MEMS Capacitive Switch Design

    DEFF Research Database (Denmark)

    Philippine, Mandy Axelle; Zareie, Hosein; Sigmund, Ole

    2013-01-01

    In this paper, we present 30 distinct RF MEMS capacitive switch designs that are the product of topology optimizations that control key mechanical properties such as stiffness, response to intrinsic stress gradients, and temperature sensitivity. The designs were evaluated with high-accuracy simul...

  8. Topology Optimization of Stressed Capacitive RF MEMS Switches

    DEFF Research Database (Denmark)

    Philippine, Mandy A.; Sigmund, Ole; Rebeiz, Gabriel M.

    2013-01-01

    Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-o...

  9. A capacitive rf power sensor based on mems technology

    NARCIS (Netherlands)

    Fernandez, L.J.

    2005-01-01

    Existing power sensors for RF signals are based on thermistors, diodes and thermocouples. These power sensors are used as terminating devices and therefore they dissipate the complete incoming signal. Furthermore, new telecommunication systems require low weight, volume and power consumption and a

  10. RF MEMS

    Indian Academy of Sciences (India)

    At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

  11. Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

    Science.gov (United States)

    Quaranta, Fabio; Persano, Anna; Capoccia, Giovanni; Taurino, Antonietta; Cola, Adriano; Siciliano, Pietro; Lucibello, Andrea; Marcelli, Romolo; Proietti, Emanuela; Bagolini, Alvise; Margesin, Benno; Bellutti, Pierluigi; Iannacci, Jacopo

    2015-05-01

    Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

  12. The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

    Science.gov (United States)

    Papaioannou, George

    The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

  13. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.; Luo, Xi; Shen, Chao; Palego, Cristiano; Hwang, James; Goldsmith, Charles L.

    2013-01-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  14. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.

    2013-03-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  15. Characterization of dielectric charging in RF MEMS

    NARCIS (Netherlands)

    Herfst, R.W.; Huizing, H.G.A.; Steeneken, P.G.; Schmitz, Jurriaan

    2005-01-01

    Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving

  16. Practical guide to RF-MEMS

    CERN Document Server

    Iannacci, Jacopo

    2013-01-01

    Closes the gap between hardcore-theoretical and purely experimental RF-MEMS books. The book covers, from a practical viewpoint, the most critical steps that have to be taken in order to develop novel RF-MEMS device concepts. Prototypical RF-MEMS devices, both including lumped components and complex networks, are presented at the beginning of the book as reference examples, and these are then discussed from different perspectives with regard to design, simulation, packaging, testing, and post-fabrication modeling. Theoretical concepts are introduced when necessary to complement the practical

  17. Topology optimized RF MEMS switches

    DEFF Research Database (Denmark)

    Philippine, M. A.; Zareie, H.; Sigmund, Ole

    2013-01-01

    Topology optimization is a rigorous and powerful method that should become a standard MEMS design tool - it can produce unique and non-intuitive designs that meet complex objectives and can dramatically improve the performance and reliability of MEMS devices. We present successful uses of topology...

  18. RF MEMS theory, design, and technology

    CERN Document Server

    Rebeiz, Gabriel M

    2003-01-01

    Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

  19. Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

    Directory of Open Access Journals (Sweden)

    Deepak Bansal

    2016-01-01

    Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

  20. A novel multi-actuation CMOS RF MEMS switch

    Science.gov (United States)

    Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

    2008-12-01

    This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

  1. High temperature stable RF MEMS microwave switches

    OpenAIRE

    Klein, Stefan

    2010-01-01

    Im Rahmen dieser Arbeit wurden elektrostatisch angesteuerte RF-MEMS Schalter mit kapazitiver Kopplung entwickelt, die Prozesstemperaturen von 400°C und darüber hinaus ohne Verlust der Funktionstüchtigkeit überstehen. Als Funktionsmaterial wird einerseits eine AlSiCu und andererseits eine WTi Legierung verwendet. Das Schalterprinzip beruht auf dem Wanderkeileffekt, der einen gekrümmten Biegebalken nutzt. Diese Verbiegung weg von der Substratoberfläche, die durch einen wohldefinierten intri...

  2. Programmable differential capacitance-to-voltage converter for MEMS accelerometers

    Science.gov (United States)

    Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

    2017-05-01

    Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

  3. Low voltage RF MEMS variable capacitor with linear C-V response

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    An RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation. © 2012 The Institution of Engineering and Technology.

  4. Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

    Science.gov (United States)

    Jah, Muzar; Simon, Eric; Sharma, Ashok

    2003-01-01

    Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

  5. RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

    KAUST Repository

    Elshurafa, Amro M.; Emira, Ahmed; Radwan, Ahmed Gomaa; Salama, Khaled N.

    2012-01-01

    This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality

  6. RF MEMS: status of the industry and roadmaps

    Science.gov (United States)

    Bouchaud, Jeremie; Wicht, Henning

    2005-01-01

    Microsystems for Radio Frequency applications, known as RF MEMS, have entered the commercialization phase in 2003. Bulk Acoustic Wave filters are already produced in series and first commercial samples of switches are available. On the other hand, reliability and packaging problems are still a major hurdle especially for switches and tunable capacitors. Will RF MEMS hold their promise to be one of the future major businesses for MEMS? The presentation will give an overview on RF MEMS applications and market players. WTC will highlight technical challenges that still have to be solved to open mass markets such as mobile telephony and WLAN. WTC will also present applications of RF MEMS and opportunities in niche markets with high added value like military and space applications. WTC will provide a regional analysis and compare R&D focus and public funding situation in North America, Europe and Asia. Finally, WTC will present an updated product roadmap market forecast for RF MEMS devices for the 2004-2008 time period.

  7. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  8. A Multifunction Low-Power Preamplifier for MEMS Capacitive Microphones

    DEFF Research Database (Denmark)

    Jawed, Syed Arsalan; Nielsen, Jannik Hammel; Gottardi, Massimo

    2009-01-01

    A multi-function two-stage chopper-stabilized preamplifier (PAMP) for MEMS capacitive microphones (MCM) is presented. The PAMP integrates digitally controllable gain, high-pass filtering and offset control, adding flexibility to the front-end readout of MCMs. The first stage of the PAMP consists...... of a source-follower (SF) while the second-stage is a capacitive gain stage. The second-stage employs chopper-stabilization (CHS), while SF buffer shields the MCM sensor from the switching spurs. The PAMP uses M poly bias resistors for the second-stage, exploiting Miller effect to achieve flat audio...

  9. MEMS capacitive force sensors for cellular and flight biomechanics

    International Nuclear Information System (INIS)

    Sun Yu; Nelson, Bradley J

    2007-01-01

    Microelectromechanical systems (MEMS) are playing increasingly important roles in facilitating biological studies. They are capable of providing not only qualitative but also quantitative information on the cellular, sub-cellular and organism levels, which is instrumental to understanding the fundamental elements of biological systems. MEMS force sensors with their high bandwidth and high sensitivity combined with their small size, in particular, have found a role in this domain, because of the importance of quantifying forces and their effect on the function and morphology of many biological structures. This paper describes our research in the development of MEMS capacitive force sensors that have already demonstrated their effectiveness in the areas of cell mechanics and Drosophila flight dynamics studies. (review article)

  10. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  11. Differential RF MEMS interwoven capacitor immune to residual stress warping

    KAUST Repository

    Elshurafa, Amro M.; Salama, Khaled N.

    2012-01-01

    A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

  12. Differential RF MEMS interwoven capacitor immune to residual stress warping

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-27

    A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

  13. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Science.gov (United States)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  14. RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.

  15. CMOS based capacitance to digital converter circuit for MEMS sensor

    Science.gov (United States)

    Rotake, D. R.; Darji, A. D.

    2018-02-01

    Most of the MEMS cantilever based system required costly instruments for characterization, processing and also has large experimental setups which led to non-portable device. So there is a need of low cost, highly sensitive, high speed and portable digital system. The proposed Capacitance to Digital Converter (CDC) interfacing circuit converts capacitance to digital domain which can be easily processed. Recent demand microcantilever deflection is part per trillion ranges which change the capacitance in 1-10 femto farad (fF) range. The entire CDC circuit is designed using CMOS 250nm technology. Design of CDC circuit consists of a D-latch and two oscillators, namely Sensor controlled oscillator (SCO) and digitally controlled oscillator (DCO). The D-latch is designed using transmission gate based MUX for power optimization. A CDC design of 7-stage, 9-stage and 11-stage tested for 1-18 fF and simulated using mentor graphics Eldo tool with parasitic. Since the proposed design does not use resistance component, the total power dissipation is reduced to 2.3621 mW for CDC designed using 9-stage SCO and DCO.

  16. MEMS capacitive accelerometer-based middle ear microphone.

    Science.gov (United States)

    Young, Darrin J; Zurcher, Mark A; Semaan, Maroun; Megerian, Cliff A; Ko, Wen H

    2012-12-01

    The design, implementation, and characterization of a microelectromechanical systems (MEMS) capacitive accelerometer-based middle ear microphone are presented in this paper. The microphone is intended for middle ear hearing aids as well as future fully implantable cochlear prosthesis. Human temporal bones acoustic response characterization results are used to derive the accelerometer design requirements. The prototype accelerometer is fabricated in a commercial silicon-on-insulator (SOI) MEMS process. The sensor occupies a sensing area of 1 mm × 1 mm with a chip area of 2 mm × 2.4 mm and is interfaced with a custom-designed low-noise electronic IC chip over a flexible substrate. The packaged sensor unit occupies an area of 2.5 mm × 6.2 mm with a weight of 25 mg. The sensor unit attached to umbo can detect a sound pressure level (SPL) of 60 dB at 500 Hz, 35 dB at 2 kHz, and 57 dB at 8 kHz. An improved sound detection limit of 34-dB SPL at 150 Hz and 24-dB SPL at 500 Hz can be expected by employing start-of-the-art MEMS fabrication technology, which results in an articulation index of approximately 0.76. Further micro/nanofabrication technology advancement is needed to enhance the microphone sensitivity for improved understanding of normal conversational speech.

  17. Wireless Capacitive Pressure Sensor With Directional RF Chip Antenna for High Temperature Environments

    Science.gov (United States)

    Scardelletti, M. C.; Jordan, J. L.; Ponchak, G. E.; Zorman, C. A.

    2015-01-01

    This paper presents the design, fabrication and characterization of a wireless capacitive pressure sensor with directional RF chip antenna that is envisioned for the health monitoring of aircraft engines operating in harsh environments. The sensing system is characterized from room temperature (25 C) to 300 C for a pressure range from 0 to 100 psi. The wireless pressure system consists of a Clapp-type oscillator design with a capacitive MEMS pressure sensor located in the LC-tank circuit of the oscillator. Therefore, as the pressure of the aircraft engine changes, so does the output resonant frequency of the sensing system. A chip antenna is integrated to transmit the system output to a receive antenna 10 m away.The design frequency of the wireless pressure sensor is 127 MHz and a 2 increase in resonant frequency over the temperature range of 25 to 300 C from 0 to 100 psi is observed. The phase noise is less than minus 30 dBcHz at the 1 kHz offset and decreases to less than minus 80 dBcHz at 10 kHz over the entire temperature range. The RF radiation patterns for two cuts of the wireless system have been measured and show that the system is highly directional and the MEMS pressure sensor is extremely linear from 0 to 100 psi.

  18. A novel RF MEMS switch with novel mechanical structure modeling

    International Nuclear Information System (INIS)

    Chan, K Y; Ramer, R

    2010-01-01

    A novel RF MEMS contact-type switch for RF and microwave applications is presented. The switch is designed with special mechanical structures for stiffness enhancement. A method of using dimple lines to reduce the stress sensitivity of a beam is shown with complete mathematical modeling and finite element mechanical simulation. A complete mathematical model is developed for the proposed switch. Limited fabrication resolution and non-uniformities in layer thickness and stress were taken into consideration for this design, concomitantly with the preservation of device miniaturization and functionalities. The novel mechanical modeling of the switch leads to the estimation of the actuation voltage and shows simplification from previously published analysis. The measured actuation voltage and RF performance of the novel RF MEMS switch are also reported. The switch actuated at 20 V achieved better than 22 dB return loss and less than 0.7 dB insertion loss in on state from dc–40 GHz; it provided better than 30 dB isolation in off state

  19. Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

    NARCIS (Netherlands)

    van Essen, M.C.

    2009-01-01

    Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently

  20. A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

    International Nuclear Information System (INIS)

    Guo, Xin; Gong, Zhuhao; Zhong, Qi; Liang, Xiaotong; Liu, Zewen

    2016-01-01

    Reconfigurable attenuators are widely used in microwave measurement instruments. Development of miniaturized attenuation devices with high precision and broadband performance is required for state-of-the-art applications. In this paper, a compact 3-bit microwave attenuator based on radio frequency micro-electro-mechanical system (RF MEMS) switches and polysilicon attenuation modules is presented. The device comprises 12 ohmic contact MEMS switches, π -type polysilicon resistive attenuation modules and microwave compensate structures. Special attention was paid to the design of the resistive network, compensate structures and system simulation. The device was fabricated using micromachining processes compatible with traditional integrated circuit fabrication processes. The reconfigurable attenuator integrated with RF MEMS switches and resistive attenuation modules was successfully fabricated with dimensions of 2.45  ×  4.34  ×  0.5 mm 3 , which is 1/1000th of the size of a conventional step attenuator. The measured RF performance revealed that the attenuator provides 10–70 dB attenuation at 10 dB intervals from 0.1–20 GHz with an accuracy better than  ±1.88 dB at 60 dB and an error of less than 2.22 dB at 10 dB. The return loss of each state of the 3-bit attenuator was better than 11.95 dB (VSWR  <  1.71) over the entire operating band. (paper)

  1. Liquid Metal Droplet and Micro Corrugated Diaphragm RF-MEMS for reconfigurable RF filters

    Science.gov (United States)

    Irshad, Wasim

    Widely Tunable RF Filters that are small, cost-effective and offer ultra low power consumption are extremely desirable. Indeed, such filters would allow drastic simplification of RF front-ends in countless applications from cell phones to satellites in space by replacing switched-array of static acoustic filters and YIG filters respectively. Switched array of acoustic filters are de facto means of channel selection in mobile applications such as cell phones. SAW and BAW filters satisfy most criteria needed by mobile applications such as low cost, size and power consumption. However, the trade-off is a significant loss of 3-4 dB in modern cell phone RF front-end. This leads to need for power-hungry amplifiers and short battery life. It is a necessary trade-off since there are no better alternatives. These devices are in mm scale and consume mW. YIG filters dominate applications where size or power is not a constraint but demand excellent RF performance like low loss and high tuning ratio. These devices are measured in inches and require several watts to operate. Clearly, a tunable RF filter technology that would combine the cost, size and power consumption benefits of acoustic filters with excellent RF performance of YIG filters would be extremely desirable and imminently useful. The objective of this dissertation is to develop such a technology based upon RF-MEMS Evanescent-mode cavity filter. Two highly novel RF-MEMS devices have been developed over the course of this PhD to address the unique MEMS needs of this technology. The first part of the dissertation is dedicated to introducing the fundamental concepts of tunable cavity resonators and filters. This includes the physics behind it, key performance metrics and what they depend on and requirements of the MEMS tuners. Initial gap control and MEMS attachment method are identified as potential hurdles towards achieving very high RF performance. Simple and elegant solutions to both these issues are discussed in

  2. RF-MEMS Technology for High-Performance Passives; The challenge of 5G mobile applications

    Science.gov (United States)

    Iannacci, Jacopo

    2017-11-01

    Commencing with a review of the characteristics of RF-MEMS in relation to 5G, the book proceeds to develop practical insight concerning the design and development of RF-MEMS including case studies of design concepts. Including multiphysics simulation and animated figures, the book will be essential reading for both academic and industrial researchers and engineers.

  3. Some studies on the deformation of the membrane in an RF MEMS switch

    NARCIS (Netherlands)

    Ambati, Vijaya Raghav; Asheim, Andreas; van den Berg, Jan Bouwe; van Gennip, Yves; Gerasimov, Tymofiy; Hlod, Andriy; Planqué, Bob; van der Schans, Martin; van der Stelt, Sjors; Vargas Rivera, Michelangelo; Vondenhoff, Erwin; Bokhove, Onno; Hurink, Johann; Meinsma, Gjerrit; Stolk, Chris; Vellekoop, Michel

    2008-01-01

    Radio Frequency (RF) switches of Micro Electro Mechanical Systems (MEMS) are appealing to the mobile industry because of their energy efficiency and ability to accommodate more frequency bands. However, the electromechanical coupling of the electrical circuit to the mechanical components in RF MEMS

  4. Creep characterization of Al alloy thin films for use in RF-MEMS switches

    NARCIS (Netherlands)

    Modlinski, R.; Witvrouw, A.; Ratchev, P.; Puers, R.; Toonder, den J.M.J.; Wolf, I.C.D.Y.M.

    2004-01-01

    Creep is expected to be a major reliability problem in some MEMS, as for example RF-MEMS switches, especially at high RF powers. For this reason it should be avoided to use creep sensitive materials in these devices. In this paper we report on creep studies on Al-alloys, materials that are often

  5. High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

    Directory of Open Access Journals (Sweden)

    Tejinder Singh

    2014-01-01

    Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

  6. Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

    Directory of Open Access Journals (Sweden)

    Azrul Azlan Hamzah

    2008-11-01

    Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

  7. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2015-11-01

    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  8. MEMS-based, RF-driven, compact accelerators

    Science.gov (United States)

    Persaud, A.; Seidl, P. A.; Ji, Q.; Breinyn, I.; Waldron, W. L.; Schenkel, T.; Vinayakumar, K. B.; Ni, D.; Lal, A.

    2017-10-01

    Shrinking existing accelerators in size can reduce their cost by orders of magnitude. Furthermore, by using radio frequency (RF) technology and accelerating ions in several stages, the applied voltages can be kept low paving the way to new ion beam applications. We make use of the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and have previously shown the implementation of its basic components using printed circuit boards, thereby reducing the size of earlier MEQALACs by an order of magnitude. We now demonstrate the combined integration of these components to form a basic accelerator structure, including an initial beam-matching section. In this presentation, we will discuss the results from the integrated multi-beam ion accelerator and also ion acceleration using RF voltages generated on-board. Furthermore, we will show results from Micro-Electro-Mechanical Systems (MEMS) fabricated focusing wafers, which can shrink the dimension of the system to the sub-mm regime and lead to cheaper fabrication. Based on these proof-of-concept results we outline a scaling path to high beam power for applications in plasma heating in magnetized target fusion and in neutral beam injectors for future Tokamaks. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC02-05CH11231.

  9. Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

    OpenAIRE

    van Essen, M.C.

    2009-01-01

    Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

  10. The RF voltage dependence of the electron sheath heating in low pressure capacitively coupled rf discharges

    International Nuclear Information System (INIS)

    Buddemeier, U.; Kortshagen, U.; Pukropski, I.

    1995-01-01

    In low pressure capacitively coupled RF discharges two competitive electron heating mechanisms have been discussed for some time now. At low pressures the stochastic sheath heating and for somewhat higher pressures the Joule heating in the bulk plasma have been proposed. When the pressure is increased at constant RF current density a transition from concave electron distribution functions (EDF) with a pronounced cold electron group to convex EDFs with a missing strong population of cold electrons is found. This transition was interpreted as the transition from dominant stochastic to dominant Joule heating. However, a different interpretation has been given by Kaganovich and Tsendin, who attributed the concave shaped EDFs to the spatially inhomogeneous RF field in combination with the nonlocality of the EDF

  11. Single-Chip Multiple-Frequency RF MEMS Resonant Platform for Wireless Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A novel, single-chip, multiple-frequency platform for RF/IF filtering and clock reference based on contour-mode aluminum nitride (AlN) MEMS piezoelectric resonators...

  12. RF Front End Based on MEMS Components for Miniaturized Digital EVA Radio, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, AlphaSense, Inc. and the Carnegie Mellon University propose to develop a RF receiver front end based on CMOS-MEMS components for miniaturized...

  13. A Coupled Field Multiphysics Modeling Approach to Investigate RF MEMS Switch Failure Modes under Various Operational Conditions

    Directory of Open Access Journals (Sweden)

    Khaled Sadek

    2009-10-01

    Full Text Available In this paper, the reliability of capacitive shunt RF MEMS switches have been investigated using three dimensional (3D coupled multiphysics finite element (FE analysis. The coupled field analysis involved three consecutive multiphysics interactions. The first interaction is characterized as a two-way sequential electromagnetic (EM-thermal field coupling. The second interaction represented a one-way sequential thermal-structural field coupling. The third interaction portrayed a two-way sequential structural-electrostatic field coupling. An automated substructuring algorithm was utilized to reduce the computational cost of the complicated coupled multiphysics FE analysis. The results of the substructured FE model with coupled field analysis is shown to be in good agreement with the outcome of previously published experimental and numerical studies. The current numerical results indicate that the pull-in voltage and the buckling temperature of the RF switch are functions of the microfabrication residual stress state, the switch operational frequency and the surrounding packaging temperature. Furthermore, the current results point out that by introducing proper mechanical approaches such as corrugated switches and through-holes in the switch membrane, it is possible to achieve reliable pull-in voltages, at various operating temperatures. The performed analysis also shows that by controlling the mean and gradient residual stresses, generated during microfabrication, in conjunction with the proposed mechanical approaches, the power handling capability of RF MEMS switches can be increased, at a wide range of operational frequencies. These design features of RF MEMS switches are of particular importance in applications where a high RF power (frequencies above 10 GHz and large temperature variations are expected, such as in satellites and airplane condition monitoring.

  14. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

    Science.gov (United States)

    Jang, Munseon; Yun, Kwang-Seok

    2017-12-01

    In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

  15. Modeling and non-linear responses of MEMS capacitive accelerometer

    Directory of Open Access Journals (Sweden)

    Sri Harsha C.

    2014-01-01

    Full Text Available A theoretical investigation of an electrically actuated beam has been illustrated when the electrostatic-ally actuated micro-cantilever beam is separated from the electrode by a moderately large gap for two distinct types of geometric configurations of MEMS accelerometer. Higher order nonlinear terms have been taken into account for studying the pull in voltage analysis. A nonlinear model of gas film squeezing damping, another source of nonlinearity in MEMS devices is included in obtaining the dynamic responses. Moreover, in the present work, the possible source of nonlinearities while formulating the mathematical model of a MEMS accelerometer and their influences on the dynamic responses have been investigated. The theoretical results obtained by using MATLAB has been verified with the results obtained in FE software and has been found in good agreement. Criterion towards stable micro size accelerometer for each configuration has been investigated. This investigation clearly provides an understanding of nonlinear static and dynamics characteristics of electrostatically micro cantilever based device in MEMS.

  16. Method of Measuring the Mismatch of Parasitic Capacitance in MEMS Accelerometer Based on Regulating Electrostatic Stiffness

    Directory of Open Access Journals (Sweden)

    Xianshan Dong

    2018-03-01

    Full Text Available For the MEMS capacitive accelerometer, parasitic capacitance is a serious problem. Its mismatch will deteriorate the performance of accelerometer. Obtaining the mismatch of the parasitic capacitance precisely is helpful for improving the performance of bias and scale. Currently, the method of measuring the mismatch is limited in the direct measuring using the instrument. This traditional method has low accuracy for it would lead in extra parasitic capacitive and have other problems. This paper presents a novel method based on the mechanism of a closed-loop accelerometer. The strongly linear relationship between the output of electric force and the square of pre-load voltage is obtained through theoretical derivation and validated by experiment. Based on this relationship, the mismatch of parasitic capacitance can be obtained precisely through regulating electrostatic stiffness without other equipment. The results can be applied in the design of decreasing the mismatch and electrical adjusting for eliminating the influence of the mismatch.

  17. Design, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches

    Directory of Open Access Journals (Sweden)

    Zhongliang Deng

    2016-08-01

    Full Text Available This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0° at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.

  18. A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications.

    Science.gov (United States)

    Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

    2017-06-07

    The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm², which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply.

  19. Infrastructure for the design and fabrication of MEMS for RF/microwave and millimeter wave applications

    Science.gov (United States)

    Nerguizian, Vahe; Rafaf, Mustapha

    2004-08-01

    This article describes and provides valuable information for companies and universities with strategies to start fabricating MEMS for RF/Microwave and millimeter wave applications. The present work shows the infrastructure developed for RF/Microwave and millimeter wave MEMS platforms, which helps the identification, evaluation and selection of design tools and fabrication foundries taking into account packaging and testing. The selected and implemented simple infrastructure models, based on surface and bulk micromachining, yield inexpensive and innovative approaches for distributed choices of MEMS operating tools. With different educational or industrial institution needs, these models may be modified for specific resource changes using a careful analyzed iteration process. The inputs of the project are evaluation selection criteria and information sources such as financial, technical, availability, accessibility, simplicity, versatility and practical considerations. The outputs of the project are the selection of different MEMS design tools or software (solid modeling, electrostatic/electromagnetic and others, compatible with existing standard RF/Microwave design tools) and different MEMS manufacturing foundries. Typical RF/Microwave and millimeter wave MEMS solutions are introduced on the platform during the evaluation and development phases of the project for the validation of realistic results and operational decision making choices. The encountered challenges during the investigation and the development steps are identified and the dynamic behavior of the infrastructure is emphasized. The inputs (resources) and the outputs (demonstrated solutions) are presented in tables and flow chart mode diagrams.

  20. Design and Optimization of AlN based RF MEMS Switches

    Science.gov (United States)

    Hasan Ziko, Mehadi; Koel, Ants

    2018-05-01

    Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

  1. A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

    Science.gov (United States)

    Yi, Zhenxiang; Liao, Xiaoping

    2013-03-01

    In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8-12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed-fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than -25 dB and an insertion loss of around 0.1 dB at 8-12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW-1 at 8, 10 and 12 GHz, respectively.

  2. A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

    International Nuclear Information System (INIS)

    Yi, Zhenxiang; Liao, Xiaoping

    2013-01-01

    In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8–12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed–fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than −25 dB and an insertion loss of around 0.1 dB at 8–12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW −1 at 8, 10 and 12 GHz, respectively. (paper)

  3. A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators

    Science.gov (United States)

    Zhao, Jicong; Yuan, Quan; Kan, Xiao; Yang, Jinling; Yang, Fuhua

    2017-01-01

    This paper presents a wafer-level three-dimensional (3D) vacuum packaging technique for radio frequency microelectromechanical systems (RF MEMS) resonators. A Sn-rich Au-Sn solder bonding is employed to provide a vacuum encapsulation as well as electrical conductions. Vertical silicon vias are micro-fabricated by glass reflow process. The optimized grounding, via pitch, and all-round shielding effectively reduce feed-through capacitance. Thus the signal-to-background ratios (SBRs) of the transmission signals increase from 17 dB to 20 dB, and the quality factor (Q) values of the packaged resonators go from around 8000 up to more than 9500. The measured average leak rate and shear strength are (2.55  ±  0.9)  ×  10-8 atm-cc s-1 and 42.53  ±  4.19 MPa, respectively. Furthermore, thermal cycling test between  -40 °C and 100 °C and high temperature storage test at 150 °C show that the resonant-frequency drifts are less than  ±7 ppm. In addition, the SBRs and the Q values have no obvious change after the tests. The experimental results demonstrated that the proposed encapsulation technique is well suited for the applications of RF MEMS devices.

  4. Design of pressure-sensing diaphragm for MEMS capacitance diaphragm gauge considering size effect

    Science.gov (United States)

    Li, Gang; Li, Detian; Cheng, Yongjun; Sun, Wenjun; Han, Xiaodong; Wang, Chengxiang

    2018-03-01

    MEMS capacitance diaphragm gauge with a full range of (1˜1000) Pa is considered for its wide application prospect. The design of pressure-sensing diaphragm is the key to achieve balanced performance for this kind of gauges. The optimization process of the pressure-sensing diaphragm with island design of a capacitance diaphragm gauge based on MEMS technique has been reported in this work. For micro-components in micro scale range, mechanical properties are very different from that in the macro scale range, so the size effect should not be ignored. The modified strain gradient elasticity theory considering size effect has been applied to determine the bending rigidity of the pressure-sensing diaphragm, which is then used in the numerical model to calculate the deflection-pressure relation of the diaphragm. According to the deflection curves, capacitance variation can be determined by integrating over the radius of the diaphragm. At last, the design of the diaphragm has been optimized based on three parameters: sensitivity, linearity and ground capacitance. With this design, a full range of (1˜1000) Pa can be achieved, meanwhile, balanced sensitivity, resolution and linearity can be kept.

  5. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-01-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions

  6. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

    Science.gov (United States)

    Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

    2016-12-30

    In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

  7. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

    Directory of Open Access Journals (Sweden)

    Guillermo Royo

    2016-12-01

    Full Text Available In this work, we present a capacitance-to-voltage converter (CVC for capacitive accelerometers based on microelectromechanical systems (MEMS. Based on a fully-differential transimpedance amplifier (TIA, it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

  8. RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

    NARCIS (Netherlands)

    Schmitz, Jurriaan; Cubaynes, F.N; Cubaynes, F.N.; Havens, R.J.; de Kort, R.; Scholten, A.J.; Tiemeijer, L.F.

    2003-01-01

    We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter

  9. Quasi-Optical Network Analyzers and High-Reliability RF MEMS Switched Capacitors

    Science.gov (United States)

    Grichener, Alexander

    The thesis first presents a 2-port quasi-optical scalar network analyzer consisting of a transmitter and receiver both built in planar technology. The network analyzer is based on a Schottky-diode mixer integrated inside a planar antenna and fed differentially by a CPW transmission line. The antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The LO signal is swept from 3-5 GHz and high-order harmonic mixing in both up- and down- conversion mode is used to realize the 15-50 GHz RF bandwidth. The network analyzer resulted in a dynamic range of greater than 40 dB and was successfully used to measure a frequency selective surface with a second-order bandpass response. Furthermore, the system was built with circuits and components for easy scaling to millimeter-wave frequencies which is the primary motivation for this work. The application areas for a millimeter and submillimeter-wave network analyzer include material characterization and art diagnostics. The second project presents several RF MEMS switched capacitors designed for high-reliability operation and suitable for tunable filters and reconfigurable networks. The first switched-capacitor resulted in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam resulted in Q greater than 100 at C to X-band frequencies, and power handling of 0.6-1.1 W. The design also minimized charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high power (1 W) conditions. The second switched-capacitor was designed without any dielectric to minimize charging. The device was hot-switched at 1 W of RF power for greater than 11 billion cycles with virtually no change in the C-V curve. The final project presents a 7-channel

  10. MEMS variable capacitance devices utilizing the substrate: II. Zipping varactors

    KAUST Repository

    Elshurafa, Amro M.

    2010-03-22

    This paper, the second and last in this series, introduces PolyMUMPS zipping varactors that exploit the substrate and provide a high tuning range and a high quality factor. Building on the important findings of part I of this paper, the substrate was utilized effectively once again in the design and fabrication of zipping varactors to attain devices with very good performance. Two zipping varactors are proposed, analysed theoretically, simulated, fabricated and tested successfully. The tuning range, quality factor and actuation voltage of those varactors are 4.5, 16.4, 55 V and 4.2, 17, 55 V respectively. Finally, and based on one of the proposed zipping varactors, a very large capacitance value varactor array, with a tuning range of 5.3, was designed and tested. To the best of our knowledge, these zipping varactors exhibit the best reported characteristics in PolyMUMPS to date within their category in terms of tuning range, quality factor, required actuation voltage and total area consumed. © 2010 IOP Publishing Ltd.

  11. Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

    NARCIS (Netherlands)

    Tilmans, H.A.C.; Ziad, H.; Jansen, Henricus V.; Di Monaco, O.; Jourdain, A.; De Raedt, W.; Rottenberg, X.; De Backer, E.; Decoussernaeker, A.; Baert, K.

    2001-01-01

    Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as

  12. PZT-on-silicon RF-MEMS Lamb wave resonators and filters

    NARCIS (Netherlands)

    Yagubizade, H.

    2013-01-01

    Lamb-wave piezoelectric RF-MEMS resonators have demonstrated promising performance, such as low motional impedance and high Q-factor. Lamb-wave resonators are still in the perfectioning state and therefore there is a great demand for further understanding of various issues such as reducing the

  13. MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

    International Nuclear Information System (INIS)

    Elshurafa, Amro M; El-Masry, Ezz I

    2010-01-01

    This paper, the first in a series of two, presents a paradigm shift in the design of MEMS parallel plate PolyMUMPS variable capacitance devices by proposing two structures that utilize the substrate and are able to provide predetermined, customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices where the tuning range is fixed and cannot be varied. Theoretical analysis is carried out and verified with measurements of fabricated devices. The first proposed device possessed initially a tuning range of 4.4. Two variations of the structure having tuning ranges of 3 and 3.4, all at 1 GHz, were also successfully developed and tested. The second proposed variable capacitance device behaved as a switch.

  14. MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

    KAUST Repository

    Elshurafa, Amro M.

    2010-03-22

    This paper, the first in a series of two, presents a paradigm shift in the design of MEMS parallel plate PolyMUMPS variable capacitance devices by proposing two structures that utilize the substrate and are able to provide predetermined, customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices where the tuning range is fixed and cannot be varied. Theoretical analysis is carried out and verified with measurements of fabricated devices. The first proposed device possessed initially a tuning range of 4.4. Two variations of the structure having tuning ranges of 3 and 3.4, all at 1 GHz, were also successfully developed and tested. The second proposed variable capacitance device behaved as a switch. © 2010 IOP Publishing Ltd.

  15. 116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer

    International Nuclear Information System (INIS)

    Long Shanli; Liu Yan; He Kejun; Tang Xinggang; Chen Qian

    2014-01-01

    A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is −116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5 × 2.5 mm 2 and the current is 3.5 mA. (semiconductor integrated circuits)

  16. Diagnostics of ballistic electrons in a dc/rf hybrid capacitively coupled discharge

    International Nuclear Information System (INIS)

    Xu Lin; Chen, Lee; Funk, Merritt; Ranjan, Alok; Hummel, Mike; Bravenec, Ron; Sundararajan, Radha; Economou, Demetre J.; Donnelly, Vincent M.

    2008-01-01

    The energy distribution of ballistic electrons in a dc/rf hybrid parallel-plate capacitively coupled plasma reactor was measured. Ballistic electrons originated as secondaries produced by ion and electron bombardment of the electrodes. The energy distribution of ballistic electrons peaked at the value of the negative bias applied to the dc electrode. As that bias became more negative, the ballistic electron current on the rf substrate electrode increased dramatically. The ion current on the dc electrode also increased

  17. Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment

    Science.gov (United States)

    Zawawi, S. A.; Hamzah, A. A.; Mohd-Yasin, F.; Majlis, B. Y.

    2017-08-01

    In this project, SiC based MEMS capacitive microphone was developed for detecting leaked gas in extremely harsh environment such as coal mines and petroleum processing plants via ultrasonic detection. The MEMS capacitive microphone consists of two parallel plates; top plate (movable diaphragm) and bottom (fixed) plate, which separated by an air gap. While, the vent holes were fabricated on the back plate to release trapped air and reduce damping. In order to withstand high temperature and pressure, a 1.0 μm thick SiC diaphragm was utilized as the top membrane. The developed SiC could withstand a temperature up to 1400°C. Moreover, the 3 μm air gap is invented between the top membrane and the bottom plate via wafer bonding. COMSOL Multiphysics simulation software was used for design optimization. Various diaphragms with sizes of 600 μm2, 700 μm2, 800 μm2, 900 μm2 and 1000 μm2 are loaded with external pressure. From this analysis, it was observed that SiC microphone with diaphragm width of 1000 μm2 produced optimal surface vibrations, with first-mode resonant frequency of approximately 36 kHz. The maximum deflection value at resonant frequency is less than the air gap thickness of 8 mu;m, thus eliminating the possibility of shortage between plates during operation. As summary, the designed SiC capacitive microphone has high potential and it is suitable to be applied in ultrasonic gas leaking detection in harsh environment.

  18. Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

    OpenAIRE

    Zhuhao Gong; Yulong Zhang; Xin Guo; Zewen Liu

    2018-01-01

    A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to gener...

  19. Designing a robust high-speed CMOS-MEMS capacitive humidity sensor

    International Nuclear Information System (INIS)

    Lazarus, N; Fedder, G K

    2012-01-01

    In our previous work (Lazarus and Fedder 2011 J. Micromech. Microeng. 21 0650281), we demonstrated a CMOS-MEMS capacitive humidity sensor with a 72% improvement in sensitivity over the highest previously integrated on a CMOS die. This paper explores a series of methods for creating a faster and more manufacturable high-sensitivity capacitive humidity sensor. These techniques include adding oxide pillars to hold the plates apart, spin coating polymer to allow sensors to be fabricated more cheaply, adding a polysilicon heater and etching away excess polymer in the release holes. In most cases a tradeoff was found between sensitivity and other factors such as response time or robustness. A robust high-speed sensor was designed with a sensitivity of 0.21% change in capacitance per per cent relative humidity, while dropping the response time constant from 70 to 4s. Although less sensitive than our design, the sensor remains 17% more sensitive than the most sensitive interdigitated designs successfully integrated with CMOS. (paper)

  20. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-05-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  1. Identification of Capacitive MEMS Accelerometer Structure Parameters for Human Body Dynamics Measurements

    Directory of Open Access Journals (Sweden)

    Vincas Benevicius

    2013-08-01

    Full Text Available Due to their small size, low weight, low cost and low energy consumption, MEMS accelerometers have achieved great commercial success in recent decades. The aim of this research work is to identify a MEMS accelerometer structure for human body dynamics measurements. Photogrammetry was used in order to measure possible maximum accelerations of human body parts and the bandwidth of the digital acceleration signal. As the primary structure the capacitive accelerometer configuration is chosen in such a way that sensing part measures on all three axes as it is 3D accelerometer and sensitivity on each axis is equal. Hill climbing optimization was used to find the structure parameters. Proof-mass displacements were simulated for all the acceleration range that was given by the optimization problem constraints. The final model was constructed in Comsol Multiphysics. Eigenfrequencies were calculated and model’s response was found, when vibration stand displacement data was fed into the model as the base excitation law. Model output comparison with experimental data was conducted for all excitation frequencies used during the experiments.

  2. Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

    Directory of Open Access Journals (Sweden)

    Zhuhao Gong

    2018-02-01

    Full Text Available A radio-frequency micro-electro-mechanical system (RF MEMS wafer-level packaging (WLP method using pre-patterned benzo-cyclo-butene (BCB polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to generate the housing cavity, the BCB sealing ring was protected by a sputtered Cr/Au (chromium/gold layer. The average measured thickness of the BCB layer was 5.9 μm. In contrast to the conventional methods of spin-coating BCB after fabricating cavities, the pre-patterned BCB method presented BCB bonding layers with better quality on severe topography surfaces in terms of increased uniformity of thickness and better surface flatness. The observation of the bonded layer showed that no void or gap formed on the protruding coplanar waveguide (CPW lines. A shear strength test was experimentally implemented as a function of the BCB widths in the range of 100–400 μm. The average shear strength of the packaged device was higher than 21.58 MPa. A RF MEMS switch was successfully packaged using this process with a negligible impact on the microwave characteristics and a significant improvement in the lifetime from below 10 million to over 1 billion. The measured insertion loss of the packaged RF MEMS switch was 0.779 dB and the insertion loss deterioration caused by the package structure was less than 0.2 dB at 30 GHz.

  3. On the Modeling of a MEMS Based Capacitive Accelerometer for Measurement of Tractor Seat Vibration

    Directory of Open Access Journals (Sweden)

    M. Alidoost

    2010-04-01

    Full Text Available Drivers of heavy vehicles often face with higher amplitudes of frequencies range between 1-80 Hz. Hence, this range of frequency results in temporary or even sometimes permanent damages to the health of drivers. Examples for these problems are damages to the vertebral column and early tiredness, which both reduce the driver’s performance significantly. One solution to this problem is to decrease the imposed vibration to the driver’s seat by developing an active seat system. These systems require an online measuring unit to sense vibrations transferred to the seat. The measuring unit can include a capacitive micro-accelerometer on the basis of MEMS which measure online vibrations on the seat. In this study, the mechanical behavior of a capacitive micro-accelerometer for the vibration range applied to a tractor seat has been simulated. The accelerometer is capable to measure step, impact and harmonic external excitations applied to the system. The results of the study indicate that, with increasing the applied voltage, the system sensitivity also increases, but the measuring range of vibrations decreases and vice versa. The modeled accelerometer, at damping ratio of 0.67 is capable to measure accelerations within the frequency range of lower than 130 Hz.

  4. Staging of RF-accelerating Units in a MEMS-based Ion Accelerator

    Science.gov (United States)

    Persaud, A.; Seidl, P. A.; Ji, Q.; Feinberg, E.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Vinayakumar, K. B.; Lal, A.

    Multiple Electrostatic Quadrupole Array Linear Accelerators (MEQALACs) provide an opportunity to realize compact radio- frequency (RF) accelerator structures that can deliver very high beam currents. MEQALACs have been previously realized with acceleration gap distances and beam aperture sizes of the order of centimeters. Through advances in Micro-Electro-Mechanical Systems (MEMS) fabrication, MEQALACs can now be scaled down to the sub-millimeter regime and batch processed on wafer substrates. In this paper we show first results from using three RF stages in a compact MEMS-based ion accelerator. The results presented show proof-of-concept with accelerator structures formed from printed circuit boards using a 3 × 3 beamlet arrangement and noble gas ions at 10 keV. We present a simple model to describe the measured results. We also discuss some of the scaling behaviour of a compact MEQALAC. The MEMS-based approach enables a low-cost, highly versatile accelerator covering a wide range of currents (10 μA to 100 mA) and beam energies (100 keV to several MeV). Applications include ion-beam analysis, mass spectrometry, materials processing, and at very high beam powers, plasma heating.

  5. Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

    Directory of Open Access Journals (Sweden)

    Amna Riaz

    2018-01-01

    Full Text Available Microelectromechanical Systems (MEMS are devices made up of several electrical and mechanical components. They consist of mechanical functions (sensing, thermal, inertial and electrical functions (switching, decision making on a single chip made by microfabrication methods. These chips exhibit combined properties of the two functions. The size of system has characteristic dimensions less than 1mm but more than 1μm. The configuration of these components determine the final deliverables of the switch. MEMS can be designed to meet user requirements on any level from microbiological application such as biomedical transducers or tissue engineering, to mechanical systems such as microfluidic diagnoses or chemical fuel cells. The low cost, small mass and minimal power consumption of the MEMS makes it possible to readily integrate to any kind of system in any environment. MEMS are faster, better and cheaper. They offer excellent electrical performances. MEMS working at Radio frequencies are RF MEMS. RF-MEMS switches find huge market in the modern telecommunication networks, biological, automobiles, satellites and defense systems because of their lower power consumptions at relatively higher frequencies and better electrical performances. But the reliability is the major hurdle in the fate of RF MEMS switches. Reliability mainly arises due to the presence of residual stresses, charging current, fatigue and creep and contact degradation. The presence of residual stresses in switches the S-Parameters of the switches are affected badly and the residual stress affects the final planarity of the fabricated structure. Design and simulation of an RF-MEMS switch is proposed considering the residual stresses in both on and off state. The operating frequency band is being optimized and the best possible feasible fabrication technique for the proposed switch design is being analyzed. S-Parameters are calculated and a comparison for the switches with stress and

  6. Application of capacitively coupled rf discharge plasma for sterilization of polymer materials used in ophthalmology

    International Nuclear Information System (INIS)

    Abdullin, I.Sh.; Avetisov, S.E.; Lipatov, D.V.; Rybakova, E.G.; Bragin, V.E.; Bykanov, A.N.; Kamarentsev, E.N.

    1996-01-01

    The sterilization effect of capacitively coupled rf discharge plasma treatment of contact lenses was investigated. There were used two types of polymer: highly hydrophilic polymer with water content 76% (Navelen-76) and poly-methylmethacrylate (PMMA). There was demonstrated the possibility of effective sterilization by RF discharge plasma of a set of polymer materials used in ophthalmology. The best results were obtained for hard contact lenses. There was perfect sterilization in this case. There were not perfect sterilization in some cases of soft contact lenses treatment. It may be caused by porous structure of the external layers of this material and limited thickness of the sterilization layer. (author)

  7. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

    International Nuclear Information System (INIS)

    Su Shi; Liao Xiaoping

    2009-01-01

    This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

  8. Simulation and optimization of a totally free flexible RF MEMS switch

    International Nuclear Information System (INIS)

    Lorphelin, N; Robin, R; Rollier, A S; Touati, S; Kanciurzewski, A; Millet, O; Segueni, K

    2009-01-01

    This paper presents the principle and the modeling of an innovative RF MEMS switch designed for low voltage applications, especially for mobile phones. This switch is based on a totally free flexible membrane, which is supported by pillars and actuated electrostatically by two pairs of electrodes, enabling two forced states. The main advantage of this structure is the use of a lever effect in order to provide high deflections above the transmission line even with a small gap, which explains why the actuation voltage is small compared to classical MEMS switches. The Euler–Bernoulli beam theory is applied to build an analytical 1D model with boundary conditions, which depend on the type of actuation and if pull-in is reached or not. This model is discretized and solved by the finite difference method. Then, a more accurate 3D finite element method is applied to add corrections to the first model. Once this modeling approach is validated, it is used to determine adequate geometrical parameters for the desired switch specifications. Mechanical characterizations on processed components show a pull-in voltage about 7.5 V, which is in good agreement with simulated values. RF measurements show excellent performances

  9. Verification of high voltage rf capacitive sheath models with particle-in-cell simulations

    Science.gov (United States)

    Wang, Ying; Lieberman, Michael; Verboncoeur, John

    2009-10-01

    Collisionless and collisional high voltage rf capacitive sheath models were developed in the late 1980's [1]. Given the external parameters of a single-frequency capacitively coupled discharge, plasma parameters including sheath width, electron and ion temperature, plasma density, power, and ion bombarding energy can be estimated. One-dimensional electrostatic PIC codes XPDP1 [2] and OOPD1 [3] are used to investigate plasma behaviors within rf sheaths and bulk plasma. Electron-neutral collisions only are considered for collisionless sheaths, while ion-neutral collisions are taken into account for collisional sheaths. The collisionless sheath model is verified very well by PIC simulations for the rf current-driven and voltage-driven cases. Results will be reported for collisional sheaths also. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16 (1988) 638; 17 (1989) 338 [2] J. P. Verboncoeur, M. V. Alves, V. Vahedi, and C. K. Birdsall, J. Comp. Phys. 104 (1993) 321 [3] J. P. Verboncoeur, A. B. Langdon and N. T. Gladd, Comp. Phys. Comm. 87 (1995) 199

  10. On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

    Science.gov (United States)

    Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

    2018-02-01

    In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

  11. RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

    International Nuclear Information System (INIS)

    Iannacci, J; Tschoban, C

    2017-01-01

    RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  −10 dB to  −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed. (paper)

  12. Mechanism for heating of nitrogen plasmas in an electrodeless rf capacitive discharge at medium pressures

    International Nuclear Information System (INIS)

    Berdichevskii, M.G.; Marusin, V.V.

    1979-01-01

    The possible contributions of several processes to the experimentally observed heating of nitrogen plasmas in an electarodeless rf capacitive discharge at pressures of p=2.7-67 kPa are discussed. These processes are electron-rotational, vibrational--translational (V--T), and nonresonance vibrational--vibrational (V--V) energy exchange and effects due to O 2 , H 2 O, and NO impurities in the gas. It is shown that as the pressure is decreased the heating mechanism changes from quasiequilibrium to nonequilibrium V--T heating caused by overpopulation of high vibrational levels in the ground state of the nitrogen molecule

  13. Characterization of a piezoelectric MEMS actuator surface toward motion-enabled reconfigurable RF circuits

    Science.gov (United States)

    Tellers, M. C.; Pulskamp, J. S.; Bedair, S. S.; Rudy, R. Q.; Kierzewski, I. M.; Polcawich, R. G.; Bergbreiter, S. E.

    2018-03-01

    As an alternative to highly constrained hard-wired reconfigurable RF circuits, a motion-enabled reconfigurable circuit (MERC) offers freedom from transmission line losses and homogeneous materials selection. The creation of a successful MERC requires a precise mechanical mechanism for relocating components. In this work, a piezoelectric MEMS actuator array is modeled and experimentally characterized to assess its viability as a solution to the MERC concept. Actuation and design parameters are evaluated, and the repeatability of high quality on-axis motion at greater than 1 mm s-1 is demonstrated with little positional error. Finally, an initial proof-of-concept circuit reconfiguration has been demonstrated using off-the-shelf RF filter components. Although initial feasibility tests show filter performance degradation with an additional insertion loss of 0.3 dB per contact, out-of-band rejection degradation as high as 10 dB, and ripple performance reduction from 0.25 dB to 1.5 dB, MERC is proven here as an alternative to traditional approaches used in reconfigurable RF circuit applications.

  14. Pyrolysis treatment of waste tire powder in a capacitively coupled RF plasma reactor

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H. [Department of Environmental Engineering, Guangdong University of Technology, Waihuanxi Road, Guangzhou 510006 (China); Tang, L. [Department of Civil Engineering, Guangzhou University, Waihuanxi Road, Guangzhou 510006 (China)

    2009-03-15

    A capacitively coupled radio-frequency (RF) plasma reactor was tested mainly for the purpose of solid waste treatment. It was found that using a RF input power between 1600 and 2000 W and a reactor pressure between 3000 and 8000 Pa (absolute pressure), a reactive plasma environment with a gas temperature between 1200 and 1800 K can be reached in this lab scale reactor. Under these conditions, pyrolysis of tire powder gave two product streams: a combustible gas and a pyrolytic char. The major components of the gas product are H{sub 2}, CO, CH{sub 4}, and CO{sub 2} The physical properties (surface area, porosity, and particle morphology) as well as chemical properties (elemental composition, heating value, and surface functional groups) of the pyrolytic char has also been examined. (author)

  15. Uncertainty in microscale gas damping: Implications on dynamics of capacitive MEMS switches

    International Nuclear Information System (INIS)

    Alexeenko, Alina; Chigullapalli, Sruti; Zeng Juan; Guo Xiaohui; Kovacs, Andrew; Peroulis, Dimitrios

    2011-01-01

    Effects of uncertainties in gas damping models, geometry and mechanical properties on the dynamics of micro-electro-mechanical systems (MEMS) capacitive switch are studied. A sample of typical capacitive switches has been fabricated and characterized at Purdue University. High-fidelity simulations of gas damping on planar microbeams are developed and verified under relevant conditions. This and other gas damping models are then applied to study the dynamics of a single closing event for switches with experimentally measured properties. It has been demonstrated that although all damping models considered predict similar damping quality factor and agree well for predictions of closing time, the models differ by a factor of two and more in predicting the impact velocity and acceleration at contact. Implications of parameter uncertainties on the key reliability-related parameters such as the pull-in voltage, closing time and impact velocity are discussed. A notable effect of uncertainty is that the nominal switch, i.e. the switch with the average properties, does not actuate at the mean actuation voltage. Additionally, the device-to-device variability leads to significant differences in dynamics. For example, the mean impact velocity for switches actuated under the 90%-actuation voltage (about 150 V), i.e. the voltage required to actuate 90% of the sample, is about 129 cm/s and increases to 173 cm/s for the 99%-actuation voltage (of about 173 V). Response surfaces of impact velocity and closing time to five input variables were constructed using the Smolyak sparse grid algorithm. The sensitivity analysis showed that impact velocity is most sensitive to the damping coefficient whereas the closing time is most affected by the geometric parameters such as gap and beam thickness. - Highlights: → We examine stochastic non-linear response of a microsystem switch subject to multiple input uncertainties. → Sample devices have been fabricated and device

  16. The effect of discharge chamber geometry on the characteristics of low-pressure RF capacitive discharges

    Energy Technology Data Exchange (ETDEWEB)

    Lisovskiy, V.A. [Ecole Polytech, Lab Phys and Technol Plasmas, F-91128 Palaiseau, (France); Booth, J.P. [Lam Res Corp, Fremont, CA 94538 (United States); Landry, K. [Unaxis, F-38100 Grenoble, (France); Douai, D. [CEA Cadarache, Dept Rech Fus Controlee, EURATOM Assoc, F-13108 St Paul Les Durance, (France); Cassagne, V. [Riber, F-95873 Bezons, (France); Yegorenkov, V.D. [Kharkov Natl Univ, Dept Phys, UA-61077 Kharkov, (Ukraine)

    2007-07-01

    We report the measured extinction curves and current voltage characteristics (CVCs) in several gases of RF capacitive discharges excited at 13.56 MHz in chambers of three different geometries: 1) parallel plates surrounded by a dielectric cylinder ('symmetric parallel plate'); 2) parallel plates surrounded by a metallic cylinder ('asymmetric confined'); and 3) parallel plates inside a much larger metallic chamber ('asymmetric unconfined'), similar to the gaseous electronics conference reference cell. The extinction curves and the CVCs show differences between the symmetric, asymmetric confined, and asymmetric unconfined chamber configurations. In particular, the discharges exist over a much broader range of RF voltages and gas pressures for the asymmetric unconfined chamber. For symmetric and asymmetric confined discharges, the extinction curves are close to each other in the regions near the minima and at lower pressure, but at higher pressure, the extinction curve of the asymmetric confined discharge runs at a lower voltage than the one for the discharge in a symmetric chamber. In the particular cases of an 'asymmetric unconfined chamber' discharge or 'asymmetric confined' one, the RF discharge experiences the transition from a 'weak-current' mode to a 'strong-current' one at lower RF voltages than is the case for a 'symmetric parallel-plate' discharge. (authors)

  17. Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor

    Science.gov (United States)

    Chang, Chun-I.; Tsai, Ming-Han; Liu, Yu-Chia; Sun, Chih-Ming; Fang, Weileun

    2013-09-01

    This study exploits the foundry available complimentary metal-oxide-semiconductor (CMOS) process and the packaging house available pick-and-place technology to implement a capacitive type micromachined 2-axis tilt sensor. The suspended micro mechanical structures such as the spring, stage and sensing electrodes are fabricated using the CMOS microelectromechanical systems (MEMS) processes. A bulk block is assembled onto the suspended stage by pick-and-place technology to increase the proof-mass of the tilt sensor. The low temperature UV-glue dispensing and curing processes are employed to bond the block onto the stage. Thus, the sensitivity of the CMOS MEMS capacitive type 2-axis tilt sensor is significantly improved. In application, this study successfully demonstrates the bonding of a bulk solder ball of 100 µm in diameter with a 2-axis tilt sensor fabricated using the standard TSMC 0.35 µm 2P4M CMOS process. Measurements show the sensitivities of the 2-axis tilt sensor are increased for 2.06-fold (x-axis) and 1.78-fold (y-axis) after adding the solder ball. Note that the sensitivity can be further improved by reducing the parasitic capacitance and the mismatch of sensing electrodes caused by the solder ball.

  18. A Novel Technique for Design of Ultra High Tunable Electrostatic Parallel Plate RF MEMS Variable Capacitor

    Science.gov (United States)

    Baghelani, Masoud; Ghavifekr, Habib Badri

    2017-12-01

    This paper introduces a novel method for designing of low actuation voltage, high tuning ratio electrostatic parallel plate RF MEMS variable capacitors. It is feasible to achieve ultra-high tuning ratios way beyond 1.5:1 barrier, imposed by pull-in effect, by the proposed method. The proposed method is based on spring strengthening of the structure just before the unstable region. Spring strengthening could be realized by embedding some dimples on the spring arms with the precise height. These dimples shorten the spring length when achieved to the substrate. By the proposed method, as high tuning ratios as 7.5:1 is attainable by only considering four dimple sets. The required actuation voltage for this high tuning ratio is 14.33 V which is simply achievable on-chip by charge pump circuits. Brownian noise effect is also discussed and mechanical natural frequency of the structure is calculated.

  19. RF MEMS suspended band-stop resonator and filter for frequency and bandwidth continuous fine tuning

    International Nuclear Information System (INIS)

    Jang, Yun-Ho; Kim, Yong-Kweon; Llamas-Garro, Ignacio; Kim, Jung-Mu

    2012-01-01

    We firstly propose the concept of a frequency and bandwidth fine-tuning method using an RF MEMS-based suspended tunable band-stop resonator. We experimentally show the feasibility of the continuously tuned resonator, including a second-order filter, which consists of cascaded resonators to achieve center frequency and bandwidth fine tuning. The structure consists of a freestanding half-wavelength (λ/2) resonator connected to a large displacement comb actuator. The lateral movement of the λ/2 resonator over the main transmission line produces different electromagnetic decoupling values from the main transmission line. The decoupled energy leads to continuous center frequency and bandwidth tuning using the band-stop resonator circuit for fine-tuning applications. The freestanding λ/2 resonator plays the role of a variable capacitor as well as a decoupling resonator in the proposed structure. The fabricated tunable filter shows suitability for Ku-band wireless communication system applications with continuous reconfiguration

  20. Recent Developments of Reflectarray Antennas for Reconfigurable Beams Using Surface-Mounted RF-MEMS

    Directory of Open Access Journals (Sweden)

    Eduardo Carrasco

    2012-01-01

    Full Text Available Some of the most recent developments in reconfigurable reflectarrays using surface-mounted RF-MEMS, which have been developed at the Universidad Politécnica de Madrid, are summarized in this paper. The results include reconfigurable elements based on patches aperture-coupled to delay lines in two configurations: single elements and gathered elements which form subarrays with common phase control. The former include traditional aperture-coupled elements and a novel wideband reflectarray element which has been designed using two stacked patches. The latter are proposed as a low cost solution for reducing the number of electronic control devices as well as the manufacturing complexity of large reflectarrays. The main advantages and drawbacks of the grouping are evaluated in both pencil and shaped-beam antennas. In all the cases, the effects of the MEMS switches and their assembly circuitry are evaluated when they are used in a 2-bit phase shifter which can be extended to more bits, demonstrating that the proposed elements can be used efficiently in reconfigurable-beam reflectarrays.

  1. Modelling of Spring Constant and Pull-down Voltage of Non-uniform RF MEMS Cantilever Incorporating Stress Gradient

    Directory of Open Access Journals (Sweden)

    Shimul Chandra SAHA

    2008-11-01

    Full Text Available We have presented a model for spring constant and pull-down voltage of a non-uniform radio frequency microelectromechanical systems (RF MEMS cantilever that works on electrostatic actuation. The residual stress gradient in the beam material that may arise during the fabrication process is also considered in the model. Using basic force deflection calculation of the suspended beam, a stand-alone model for the spring constant and pull-down voltage of the non-uniform cantilever is developed. To compare the model, simulation is performed using standard Finite Element Method (FEM analysis tolls from CoventorWare. The model matches very well with the FEM simulation results. The model will offer an efficient means of design, analysis, and optimization of RF MEMS cantilever switches.

  2. The collisional capacitive RF sheath and the assumption of a sharp electron edge

    Science.gov (United States)

    Brinkmann, Ralf Peter

    2008-10-01

    The transition from quasi-neutrality to charge depletion is one of the characteristic features of the plasma boundary sheath. It is often described in terms of the so-called step model which assumes a transition point (electron step) where the electron density drops from a value equal to the ion density (in the bulk) to a value of zero (in the sheath). Inserted into Poisson's equation, the step model yields an expression for the field which is realistic deep in the sheath but fails to merge correctly into the ambipolar field of the bulk. This work studies the consequences of that approximation for the example of the collision-dominated, capacitive RF sheath by Lieberman [1]. First, the model is solved exactly, using a relaxation scheme. Then, the step approximation is applied which recovers Lieberman's semi-analytical solution. It is demonstrated that the step approximation induces a spurious divergence of the ion density at the sheath edge and prevents a matching of the sheath model to a bulk model. Integral sheath quantities, on the other hand, like the capacitance or the overall voltage drop, are faithfully reproduced. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16, pp. 638-644 (1988).

  3. RF-MEMS for high-performance and widely reconfigurable passive components – A review with focus on future telecommunications, Internet of Things (IoT and 5G applications

    Directory of Open Access Journals (Sweden)

    Jacopo Iannacci

    2017-10-01

    This work frames the current state of RF-MEMS market exploitation, analysing the main reasons impairing in past years the proper employment of Microsystem technology based RF passive components. Moreover, highlights on further expansion of RF-MEMS solutions in mobile and telecommunication systems will be briefly provided and discussed.

  4. Development, characterization and application of compact spectrometers based on MEMS with in-plane capacitive drives

    Science.gov (United States)

    Kenda, A.; Kraft, M.; Tortschanoff, A.; Scherf, Werner; Sandner, T.; Schenk, Harald; Luettjohann, Stephan; Simon, A.

    2014-05-01

    With a trend towards the use of spectroscopic systems in various fields of science and industry, there is an increasing demand for compact spectrometers. For UV/VIS to the shortwave near-infrared spectral range, compact hand-held polychromator type devices are widely used and have replaced larger conventional instruments in many applications. Still, for longer wavelengths this type of compact spectrometers is lacking suitable and affordable detector arrays. In perennial development Carinthian Tech Research AG together with the Fraunhofer Institute for Photonic Microsystems endeavor to close this gap by developing spectrometer systems based on photonic MEMS. Here, we review on two different spectrometer developments, a scanning grating spectrometer working in the NIR and a FT-spectrometer accessing the mid-IR range up to 14 μm. Both systems are using photonic MEMS devices actuated by in-plane comb drive structures. This principle allows for high mechanical amplitudes at low driving voltages but results in gratings respectively mirrors oscillating harmonically. Both systems feature special MEMS structures as well as aspects in terms of system integration which shall tease out the best possible overall performance on the basis of this technology. However, the advantages of MEMS as enabling technology for high scanning speed, miniaturization, energy efficiency, etc. are pointed out. Whereas the scanning grating spectrometer has already evolved to a product for the point of sale analysis of traditional Chinese medicine products, the purpose of the FT-spectrometer as presented is to demonstrate what is achievable in terms of performance. Current developments topics address MEMS packaging issues towards long term stability, further miniaturization and usability.

  5. A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

    International Nuclear Information System (INIS)

    Basu, A; Adams, G G; McGruer, N E

    2016-01-01

    Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

  6. Reliable before-fabrication forecasting of normal and touch mode MEMS capacitive pressure sensor: modeling and simulation

    Science.gov (United States)

    Jindal, Sumit Kumar; Mahajan, Ankush; Raghuwanshi, Sanjeev Kumar

    2017-10-01

    An analytical model and numerical simulation for the performance of MEMS capacitive pressure sensors in both normal and touch modes is required for expected behavior of the sensor prior to their fabrication. Obtaining such information should be based on a complete analysis of performance parameters such as deflection of diaphragm, change of capacitance when the diaphragm deflects, and sensitivity of the sensor. In the literature, limited work has been carried out on the above-stated issue; moreover, due to approximation factors of polynomials, a tolerance error cannot be overseen. Reliable before-fabrication forecasting requires exact mathematical calculation of the parameters involved. A second-order polynomial equation is calculated mathematically for key performance parameters of both modes. This eliminates the approximation factor, and an exact result can be studied, maintaining high accuracy. The elimination of approximation factors and an approach of exact results are based on a new design parameter (δ) that we propose. The design parameter gives an initial hint to the designers on how the sensor will behave once it is fabricated. The complete work is aided by extensive mathematical detailing of all the parameters involved. Next, we verified our claims using MATLAB® simulation. Since MATLAB® effectively provides the simulation theory for the design approach, more complicated finite element method is not used.

  7. Fundamental Study of a Combined Hyperthermia System with RF Capacitive Heating and Interstitial Heating

    OpenAIRE

    Saitoh, Yoshiaki; Hori, Junichi; 斉藤, 義明; 堀, 潤一

    2001-01-01

    Interstitial RF heating with an inserted electrode allows the heating position selection in a subject, but the narrow heating region is problematic. This study elucidates development of new interstitial RF heating methods, combining with external RF heating using paired electrodes, heating the subject broadly in advance in order to selectively extend the heating region. Two kinds of heating system were developed by controlling a differential mode and a common mode of RF currents. Heating expe...

  8. Design of a MEMS Capacitive Comb-drive Micro-accelerometer with Sag Optimization

    Directory of Open Access Journals (Sweden)

    B. D. PANT

    2009-10-01

    Full Text Available The current paper presents an optimization study for the designing of a highly sensitive inertial grade capacitive accelerometer based on comb-drive actuation and sensing. The proof mass, suspension system (beams or tethers, stators and rotors have to be realized through an HAR (high aspect ratio DRIE (deep reactive ion etching process for which process optimization has already been done at our laboratory. As the proof mass is a bulk micro-machined structure having a mass in milligram range, the optimum positioning of the tethers on the proof mass is important to have minimum sag, necessary to reduce the off-axis sensitivity. The optimization for the positioning of the tethers has been carried out using a commercial software tool ANSYSTM Multiphysics. The accelerometer has been modeled analytically to predict its characteristics. The dependency of sensitivity on the dimensions of the suspension beams (tethers has also been verified using the above FEM software tool. The present device has been designed to deliver a high sensitivity of 13.6 mV/g/V for low-g applications.

  9. Design and application of a metal wet-etching post-process for the improvement of CMOS-MEMS capacitive sensors

    International Nuclear Information System (INIS)

    Tsai, Ming-Han; Sun, Chih-Ming; Liu, Yu-Chia; Fang, Weileun; Wang, Chuanwei

    2009-01-01

    This study presents a process design methodology to improve the performance of a CMOS-MEMS gap-closing capacitive sensor. In addition to the standard CMOS process, the metal wet-etching approach is employed as the post-CMOS process to realize the present design. The dielectric layers of the CMOS process are exploited to form the main micro mechanical structures of the sensor. The metal layers of the CMOS process are used as the sensing electrodes and sacrificial layers. The advantages of the sensor design are as follows: (1) the parasitic capacitance is significantly reduced by the dielectric structure, (2) in-plane and out-of-plane sensing gaps can be reduced to increase the sensitivity, and (3) plate-type instead of comb-type out-of-plane sensing electrodes are available to increase the sensing electrode area. To demonstrate the feasibility of the present design, a three-axis capacitive CMOS-MEMS accelerometers chip is implemented and characterized. Measurements show that the sensitivities of accelerometers reach 11.5 mV G −1 (in the X-, Y-axes) and 7.8 mV G −1 (in the Z-axis), respectively, which are nearly one order larger than existing designs. Moreover, the detection of 10 mG excitation using the three-axis accelerometer is demonstrated for both in-plane and out-of-plane directions

  10. Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

    KAUST Repository

    Elshurafa, Amro M.

    2013-08-16

    In this paper, we model, fabricate, and measure an electrostatically actuated MEMS variable capacitor that utilizes a fractal geometry and serpentine-like suspension arms. Explicitly, a variable capacitor that possesses a top suspended plate with a specific fractal geometry and also possesses a bottom fixed plate complementary in shape to the top plate has been fabricated in the PolyMUMPS process. An important benefit that was achieved from using the fractal geometry in designing the MEMS variable capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement results show that the tuning range is 2.5 at a maximum actuation voltage of 10V.

  11. Low voltage RF MEMS variable capacitor with linear C-V response

    KAUST Repository

    Elshurafa, Amro M.; Ho, Pak Hung; Salama, Khaled N.

    2012-01-01

    .2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom

  12. Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging

    International Nuclear Information System (INIS)

    Lee, Ju-Yong; Lee, Sung-Woo; Lee, Seung-Ki; Park, Jae-Hyoung

    2013-01-01

    We present a novel method for the fabrication of void-free copper-filled through-glass-vias (TGVs), and their application to the wafer-level radio frequency microelectromechanical systems (RF MEMS) packaging scheme. By using the glass reflow process with a patterned silicon mold, a vertical TGV with smooth sidewall and fine pitch could be achieved. Bottom-up void-free filling of the TGV is successfully demonstrated through the seedless copper electroplating process. In addition, the proposed process allows wafer-level packaging with glass cap encapsulation using the anodic bonding process, since the reflowed glass interposer is only formed in the device area surrounded with silicon substrate. A simple coplanar waveguide (CPW) line was employed as the packaged device to evaluate the electrical characteristics and thermo-mechanical reliability of the proposed packaging structure. The fabricated packaging structure showed a low insertion loss of 0.116 dB and a high return loss of 35.537 dB at 20 GHz, which were measured through the whole electrical path, including the CPW line, TGVs and contact pads. An insertion loss lower than 0.1 dB and a return loss higher than 30 dB could be achieved at frequencies of up to 15 GHz, and the resistance of the single copper via was measured to be 36 mΩ. Furthermore, the thermo-mechanical reliability of the proposed packaging structure was also verified through thermal shock and pressure cooker test. (paper)

  13. n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

    Science.gov (United States)

    Zhang, Zhiqiang; Liao, Xiaoping

    2017-06-17

    To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

  14. n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

    Directory of Open Access Journals (Sweden)

    Zhiqiang Zhang

    2017-06-01

    Full Text Available To achieve radio frequency (RF power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively.

  15. rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

    Science.gov (United States)

    Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

    2018-02-01

    A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

  16. Three dimensional MEMS supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Wei

    2011-10-15

    and the specific power of 0.58 mWcm-2 at 20mVs-1 scan rate. The 3D MEMS supercapacitor fabricated in this project has the specific capacitance and the specific power of 0.029 F cm-2 and 2.2 mWcm-2 respectively at a relative large discharge rate of 5 m Acm-2. It is also found vi that the supercapacitors have the performance of broad frequency range up to 300Hz. For DRIE based 3D MEMS supercapacitor, the innovative designs were developed based on silicon micromachining process flow which includes the key processes such as thermal oxidation, RF sputtering, wet etching, DRIE, electroless plating and P Py polymerization. The optimized P Py electrode doping with Tos- performed ideal super capacitor properties in NaCl electrolyte. The single PPy electrode of the 3D MEMS supercapacitors can provide 0.128 F cm-2 specific capacitance and 1.28 mWcm-2 specific power at 20 mvs-1 scan rate. The specific capacitance of the 3D MEMS supercapacitors equals 0.056 F cm-2, and the specific power at 20 mvs-1 scan rate equals 0.56 mWcm-2. In addition, novel supercapacitors based on wafer level process are designed for flexible integration in applications such as high temperature electronics and hybrid power system for electric vehicles. Experimental work on TiO2 anodic oxidation, which enables the fabrication of the one of these designs, has been carried out. Dense TiO2 nano holes with diameters ranged from about 90 to 270 nm were obtained in 0.05 wt% HF aqueous solutions with two-step anodic oxidation method. Comparing to the published specific capacitance (about 2 mFcm-2) for microsupercapacitors [33], I have achieved much larger specific capacitance (typically 0.029 to 0.056 F cm-2) for 3D MEMS supercapacitors. The above results have been presented in 3 international conferences. Total 4 journal articles have been published, and one has been submitted. The article in the Journal of Power Source (appendix 3) has been cited 9 times after published in April 2009, and the article in

  17. Miniaturized UHF, S-, and Ka-band RF MEMS Filters for Small Form Factor, High Performance EVA Radio, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase II of this SBIR, Harmonic Devices (HDI) proposes to develop miniaturized MEMS filters at UHF, S-band and Ka-band to address the requirements of NASA's...

  18. The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

    International Nuclear Information System (INIS)

    Marsi, N; Majlis, B Y; Hamzah, A A; Mohd, F

    2013-01-01

    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27°C, 500°C, 700°C and 1000°C. The results show that both materials display linear characteristics for temperature up to 500°C, although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700°C and 1000°C, the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.

  19. Implementation of a monolithic capacitive accelerometer in a wafer-level 0.18 µm CMOS MEMS process

    International Nuclear Information System (INIS)

    Tseng, Sheng-Hsiang; Lu, Michael S-C; Wu, Po-Chang; Teng, Yu-Chen; Tsai, Hann-Huei; Juang, Ying-Zong

    2012-01-01

    This paper describes the design, fabrication and characterization of a complementary metal-oxide-semiconductor (CMOS) micro-electro-mechanical-system (MEMS) accelerometer implemented in a 0.18 µm multi-project wafer (MPW) CMOS MEMS process. In addition to the standard CMOS process, an additional aluminum layer and a thick photoresist masking layer are employed to achieve etching and microstructural release. The structural thickness of the accelerometer is up to 9 µm and the minimum structural spacing is 2.3 µm. The out-of-plane deflection resulted from the vertical stress gradient over the whole device is controlled to be under 0.2 µm. The chip area containing the micromechanical structure and switched-capacitor sensing circuit is 1.18 × 0.9 mm 2 , and the total power consumption is only 0.7 mW. Within the sensing range of ±6 G, the measured nonlinearity is 1.07% and the cross-axis sensitivities with respect to the in-plane and out-of-plane are 0.5% and 5.8%, respectively. The average sensitivity of five tested accelerometers is 191.4 mV G −1 with a standard deviation of 2.5 mV G −1 . The measured output noise floor is 354 µG Hz −1/2 , corresponding to a 100 Hz 1 G sinusoidal acceleration. The measured output offset voltage is about 100 mV at 27 °C, and the zero-G temperature coefficient of the accelerometer output is 0.94 mV °C −1 below 85 °C. (paper)

  20. Multiband carbon monoxide laser (2.5 -- 4.0 and 5.0 -- 6.5 micron) pumped by capacitive slab RF discharge

    Science.gov (United States)

    Ionin, Andrey; Kozlov, Andrey; Seleznev, Leonid; Sinitsyn, Dmitry

    2008-10-01

    Overtone lasing and fundamental band tuning was for the first time obtained in a carbon monoxide laser excited by repetitively pulsed capacitive slab RF discharge (81.36 MHz). RF discharge pulse repetition rate was 100--500 Hz. The active volume was 3x30x250 cubic mm. Laser electrodes were cooled down to 120 K. Gas mixture CO:air:He at gas pressure 15 Torr was used. The optical scheme ``frequency selective master oscillator - laser amplifier'' was applied for getting fundamental band tuning. Single line lasing with average power up to several tens of mW was observed on about 100 rotational-vibrational transitions of CO molecule within the spectral range 5.0--6.5 micron. Multiline overtone lasing was observed on about 80 spectral lines within the spectral range 2.5-4.0 micron, with maximum single line average output power 12 mW. The total output power of the slab overtone CO laser came up to 0.35 W, with laser efficiency 0.5 percent. The results of parametric studies of capacitive slab RF discharge in carbon monoxide mixtures, and overtone and fundamental band CO laser characteristics are discussed.

  1. Nonlinear dynamic modeling of a V-shaped metal based thermally driven MEMS actuator for RF switches

    Science.gov (United States)

    Bakri-Kassem, Maher; Dhaouadi, Rached; Arabi, Mohamed; Estahbanati, Shahabeddin V.; Abdel-Rahman, Eihab

    2018-05-01

    In this paper, we propose a new dynamic model to describe the nonlinear characteristics of a V-shaped (chevron) metallic-based thermally driven MEMS actuator. We developed two models for the thermal actuator with two configurations. The first MEMS configuration has a small tip connected to the shuttle, while the second configuration has a folded spring and a wide beam attached to the shuttle. A detailed finite element model (FEM) and a lumped element model (LEM) are proposed for each configuration to completely characterize the electro-thermal and thermo-mechanical behaviors. The nonlinear resistivity of the polysilicon layer is extracted from the measured current-voltage (I-V) characteristics of the actuator and the simulated corresponding temperatures in the FEM model, knowing the resistivity of the polysilicon at room temperature from the manufacture’s handbook. Both developed models include the nonlinear temperature-dependent material properties. Numerical simulations in comparison with experimental data using a dedicated MEMS test apparatus verify the accuracy of the proposed LEM model to represent the complex dynamics of the thermal MEMS actuator. The LEM and FEM simulation results show an accuracy ranging from a maximum of 13% error down to a minimum of 1.4% error. The actuator with the lower thermal load to air that includes a folded spring (FS), also known as high surface area actuator is compared to the actuator without FS, also known as low surface area actuator, in terms of the I-V characteristics, power consumption, and experimental static and dynamic responses of the tip displacement.

  2. Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

    International Nuclear Information System (INIS)

    Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

    2012-01-01

    We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

  3. Piezoelectric Zinc Oxide Based MEMS Acoustic Sensor

    Directory of Open Access Journals (Sweden)

    Aarti Arora

    2008-04-01

    Full Text Available An acoustic sensors exhibiting good sensitivity was fabricated using MEMS technology having piezoelectric zinc oxide as a dielectric between two plates of capacitor. Thin film zinc oxide has structural, piezoelectric and optical properties for surface acoustic wave (SAW and bulk acoustic wave (BAW devices. Oxygen effficient films are transparent and insulating having wide applications for sensors and transducers. A rf sputtered piezoelectric ZnO layer transforms the mechanical deflection of a thin etched silicon diaphragm into a piezoelectric charge. For 25-micron thin diaphragm Si was etched in tetramethylammonium hydroxide solution using bulk micromachining. This was followed by deposition of sandwiched structure composed of bottom aluminum electrode, sputtered 3 micron ZnO film and top aluminum electrode. A glass having 1 mm diameter hole was bonded on backside of device to compensate sound pressure in side the cavity. The measured value of central capacitance and dissipation factor of the fabricated MEMS acoustic sensor was found to be 82.4pF and 0.115 respectively, where as the value of ~176 pF was obtained for the rim capacitance with a dissipation factor of 0.138. The response of the acoustic sensors was reproducible for the devices prepared under similar processing conditions under different batches. The acoustic sensor was found to be working from 30Hz to 8KHz with a sensitivity of 139µV/Pa under varying acoustic pressure.

  4. MEMS for automotive and aerospace applications

    CERN Document Server

    Kraft, Michael

    2013-01-01

    MEMS for automotive and aerospace applications reviews the use of Micro-Electro-Mechanical-Systems (MEMS) in developing solutions to the unique challenges presented by the automotive and aerospace industries.Part one explores MEMS for a variety of automotive applications. The role of MEMS in passenger safety and comfort, sensors for automotive vehicle stability control applications and automotive tire pressure monitoring systems are considered, along with pressure and flow sensors for engine management, and RF MEMS for automotive radar sensors. Part two then goes on to explore MEMS for

  5. Spatio-temporal analysis of the electron power absorption in electropositive capacitive RF plasmas based on moments of the Boltzmann equation

    Science.gov (United States)

    Schulze, J.; Donkó, Z.; Lafleur, T.; Wilczek, S.; Brinkmann, R. P.

    2018-05-01

    Power absorption by electrons from the space- and time-dependent electric field represents the basic sustaining mechanism of all radio-frequency driven plasmas. This complex phenomenon has attracted significant attention. However, most theories and models are, so far, only able to account for part of the relevant mechanisms. The aim of this work is to present an in-depth analysis of the power absorption by electrons, via the use of a moment analysis of the Boltzmann equation without any ad-hoc assumptions. This analysis, for which the input quantities are taken from kinetic, particle based simulations, allows the identification of all physical mechanisms involved and an accurate quantification of their contributions. The perfect agreement between the sum of these contributions and the simulation results verifies the completeness of the model. We study the relative importance of these mechanisms as a function of pressure, with high spatial and temporal resolution, in an electropositive argon discharge. In contrast to some widely accepted previous models we find that high space- and time-dependent ambipolar electric fields outside the sheaths play a key role for electron power absorption. This ambipolar field is time-dependent within the RF period and temporally asymmetric, i.e., the sheath expansion is not a ‘mirror image’ of the sheath collapse. We demonstrate that this time-dependence is mainly caused by a time modulation of the electron temperature resulting from the energy transfer to electrons by the ambipolar field itself during sheath expansion. We provide a theoretical proof that this ambipolar electron power absorption would vanish completely, if the electron temperature was constant in time. This mechanism of electron power absorption is based on a time modulated electron temperature, markedly different from the Hard Wall Model, of key importance for energy transfer to electrons on time average and, thus, essential for the generation of capacitively

  6. Determination of electron density and temperature in a capacitively coupled RF discharge in neon by OES complemented with a CR model

    Energy Technology Data Exchange (ETDEWEB)

    Navratil, Z; Dvorak, P; Trunec, D [Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno (Czech Republic); Brzobohaty, O, E-mail: zdenek@physics.muni.c [Institute of Scientific Instruments of the ASCR, v.v.i., Academy of Sciences of the Czech Republic, Kralovopolska 147, 612 64 Brno (Czech Republic)

    2010-12-22

    A method of determination of electron temperature and electron density in plasmas based on optical emission spectroscopy complemented with collisional-radiative modelling (OES/CRM) was studied in this work. A radiofrequency (13.56 MHz) capacitively coupled discharge in neon at 10 Pa was investigated by intensity calibrated optical emission spectroscopy. The absolute intensities of neon transitions between 3p and 3s states were fitted with a collisional-radiative (CR) model in order to determine the electron temperature and electron density. Measuring techniques such as imaging with an ICCD camera were adopted for supplementary diagnostics. The obtained results were compared with the results of compensated Langmuir probe measurement and one-dimensional particle-in-cell/Monte Carlo (PIC/MC) simulation. The results of OES/CRM and PIC/MC method were in close agreement in the case of electron temperature in the vicinity of a driven electrode. The determined value of electron temperature was about 8 eV. In bulk plasma, the measured spectra were not satisfactorily fitted. In the case of electron density only relative agreement was obtained between OES/CRM and Langmuir probe measurement; the absolute values differed by a factor of 5. The axial dependence of electron density calculated by PIC/MC was distinct from them, reaching the maximum values between the results of the other two methods. The investigation of power dependence of plasma parameters close to the driven electrode showed a decrease in electron temperature and an increase in electron density together with increasing incoming RF power. The calculated spectra fitted very well the measured spectra in this discharge region.

  7. MEMS-based Circuits and Systems for Wireless Communication

    CERN Document Server

    Kaiser, Andreas

    2013-01-01

    MEMS-based Circuits and Systems for Wireless Communication provides comprehensive coverage of RF-MEMS technology from device to system level. This edited volume places emphasis on how system performance for radio frequency applications can be leveraged by Micro-Electro-Mechanical Systems (MEMS). Coverage also extends to innovative MEMS-aware radio architectures that push the potential of MEMS technology further ahead.  This work presents a broad overview of the technology from MEMS devices (mainly BAW and Si MEMS resonators) to basic circuits, such as oscillators and filters, and finally complete systems such as ultra-low-power MEMS-based radios. Contributions from leading experts around the world are organized in three parts. Part I introduces RF-MEMS technology, devices and modeling and includes a prospective outlook on ongoing developments towards Nano-Electro-Mechanical Systems (NEMS) and phononic crystals. Device properties and models are presented in a circuit oriented perspective. Part II focusses on ...

  8. MEMS packaging

    CERN Document Server

    Hsu , Tai-Ran

    2004-01-01

    MEMS Packaging discusses the prevalent practices and enabling techniques in assembly, packaging and testing of microelectromechanical systems (MEMS). The entire spectrum of assembly, packaging and testing of MEMS and microsystems, from essential enabling technologies to applications in key industries of life sciences, telecommunications and aerospace engineering is covered. Other topics included are bonding and sealing of microcomponents, process flow of MEMS and microsystems packaging, automated microassembly, and testing and design for testing.The Institution of Engineering and Technology is

  9. A Musical instrument in MEMS

    NARCIS (Netherlands)

    Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, H.; Beekman, J.G.; Been, A.J.; Folkertsma, Gerrit Adriaan; Folkertsma, G.A.; Fortgens, L.; de Graaf, D.; Vocke, S.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

    In this work we describe a MEMS instrument that resonates at audible frequencies, and with which music can be made. The sounds are generated by mechanical resonators and capacitive displacement sensors. Damping by air scales unfavourably for generating audible frequencies with small devices.

  10. Control of Bouncing in MEMS Switches Using Double Electrodes

    KAUST Repository

    Abdul Rahim, Farhan; Younis, Mohammad I.

    2016-01-01

    This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both

  11. Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

    Science.gov (United States)

    Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

    2017-11-01

    This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

  12. Investigating ESD sensitivity in electrostatic SiGe MEMS

    International Nuclear Information System (INIS)

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  13. Modeling methodology for a CMOS-MEMS electrostatic comb

    Science.gov (United States)

    Iyer, Sitaraman V.; Lakdawala, Hasnain; Mukherjee, Tamal; Fedder, Gary K.

    2002-04-01

    A methodology for combined modeling of capacitance and force 9in a multi-layer electrostatic comb is demonstrated in this paper. Conformal mapping-based analytical methods are limited to 2D symmetric cross-sections and cannot account for charge concentration effects at corners. Vertex capacitance can be more than 30% of the total capacitance in a single-layer 2 micrometers thick comb with 10 micrometers overlap. Furthermore, analytical equations are strictly valid only for perfectly symmetrical finger positions. Fringing and corner effects are likely to be more significant in a multi- layered CMOS-MEMS comb because of the presence of more edges and vertices. Vertical curling of CMOS-MEMS comb fingers may also lead to reduced capacitance and vertical forces. Gyroscopes are particularly sensitive to such undesirable forces, which therefore, need to be well-quantified. In order to address the above issues, a hybrid approach of superposing linear regression models over a set of core analytical models is implemented. Design of experiments is used to obtain data for capacitance and force using a commercial 3D boundary-element solver. Since accurate force values require significantly higher mesh refinement than accurate capacitance, we use numerical derivatives of capacitance values to compute the forces. The model is formulated such that the capacitance and force models use the same regression coefficients. The comb model thus obtained, fits the numerical capacitance data to within +/- 3% and force to within +/- 10%. The model is experimentally verified by measuring capacitance change in a specially designed test structure. The capacitance model matches measurements to within 10%. The comb model is implemented in an Analog Hardware Description Language (ADHL) for use in behavioral simulation of manufacturing variations in a CMOS-MEMS gyroscope.

  14. Hollow MEMS

    DEFF Research Database (Denmark)

    Larsen, Peter Emil

    Miniaturization of electro mechanical sensor systems to the micro range and beyond has shown impressive sensitivities measuring sample properties like mass, viscosity, acceleration, pressure and force just to name a few applications. In order to enable these kinds of measurements on liquid samples...... a hollow MEMS sensor has been designed, fabricated and tested. Combined density, viscosity, buoyant mass spectrometry and IR absorption spectroscopy are possible on liquid samples and micron sized suspended particles (e.g. single cells). Measurements are based on changes in the resonant behavior...... of these sensors. Optimization of the microfabrication process has led to a process yield of almost 100% .This is achieved despite the fact, that the process still offers a high degree of flexibility. By simple modifications the Sensor shape can be optimized for different size ranges and sensitivities...

  15. MEMS based monolithic Phased array using 3-bit Switched-line Phase Shifter

    Directory of Open Access Journals (Sweden)

    A. Karmakr

    2017-10-01

    Full Text Available This article details the design of an electronically scanning phased array antenna with proposed fabrication process steps. Structure is based upon RF micro-electromechanical system (MEMS technology. Capacitive type shunt switches have been implemented here to cater high frequency operation. The architecture, which is deigned at 30 GHz, consists of 3-bit (11.25º, 22.5º and 45º integrated Switched-line phase shifter and a linearly polarized microstrip patch antenna. Detailed design tricks of the Ka-band phase shifter is outlined here. The whole design is targeted for future monolithic integration. So, the substrate of choice is High Resistive Silicon (ρ > 8kΩ-cm, tan δ =0.01 and ϵr =11.8. The overall circuit occupies an cross-sectional area of 20 × 5 mm2. The simulated results show that the phase shifter can provide nearly 11.25º/22.5º/45º phase shifts and their combinations at the expense of 1dB average insertion loss at 30 GHz for eight combinations. Practical fabrication process flow using surface micromachining is proposed here. Critical dimensions of the phased array structure is governed by the deign rules of the standard CMOS/MEMS foundry.

  16. RF and microwave microelectronics packaging II

    CERN Document Server

    Sturdivant, Rick

    2017-01-01

    Reviews RF, microwave, and microelectronics assembly process, quality control, and failure analysis Bridges the gap between low cost commercial and hi-res RF/Microwave packaging technologies Engages in an in-depth discussion of challenges in packaging and assembly of advanced high-power amplifiers This book presents the latest developments in packaging for high-frequency electronics. It is a companion volume to “RF and Microwave Microelectronics Packaging” (2010) and covers the latest developments in thermal management, electrical/RF/thermal-mechanical designs and simulations, packaging and processing methods, and other RF and microwave packaging topics. Chapters provide detailed coverage of phased arrays, T/R modules, 3D transitions, high thermal conductivity materials, carbon nanotubes and graphene advanced materials, and chip size packaging for RF MEMS. It appeals to practicing engineers in the electronic packaging and high-frequency electronics domain, and to academic researchers interested in underst...

  17. Biomaterials for MEMS

    CERN Document Server

    Chiao, Mu

    2011-01-01

    This book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge

  18. Feasibility of Frequency-Modulated Wireless Transmission for a Multi-Purpose MEMS-Based Accelerometer

    Directory of Open Access Journals (Sweden)

    Alessandro Sabato

    2014-09-01

    Full Text Available Recent advances in the Micro Electro-Mechanical System (MEMS technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM of civil engineering structures. To date, sensors’ low sensitivity and accuracy—especially at very low frequencies—have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor’s analog signals are converted to digital signals before radio-frequency (RF wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F instead of the conventional Analog to Digital Conversion (ADC. In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

  19. Feasibility of frequency-modulated wireless transmission for a multi-purpose MEMS-based accelerometer.

    Science.gov (United States)

    Sabato, Alessandro; Feng, Maria Q

    2014-09-05

    Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy--especially at very low frequencies--have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

  20. False capacitance of supercapacitors

    OpenAIRE

    Ragoisha, G. A.; Aniskevich, Y. M.

    2016-01-01

    Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

  1. RF transport

    International Nuclear Information System (INIS)

    Choroba, Stefan

    2013-01-01

    This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

  2. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  3. Modularly Integrated MEMS Technology

    National Research Council Canada - National Science Library

    Eyoum, Marie-Angie N

    2006-01-01

    Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation...

  4. A MEMS-based, wireless, biometric-like security system

    Science.gov (United States)

    Cross, Joshua D.; Schneiter, John L.; Leiby, Grant A.; McCarter, Steven; Smith, Jeremiah; Budka, Thomas P.

    2010-04-01

    We present a system for secure identification applications that is based upon biometric-like MEMS chips. The MEMS chips have unique frequency signatures resulting from fabrication process variations. The MEMS chips possess something analogous to a "voiceprint". The chips are vacuum encapsulated, rugged, and suitable for low-cost, highvolume mass production. Furthermore, the fabrication process is fully integrated with standard CMOS fabrication methods. One is able to operate the MEMS-based identification system similarly to a conventional RFID system: the reader (essentially a custom network analyzer) detects the power reflected across a frequency spectrum from a MEMS chip in its vicinity. We demonstrate prototype "tags" - MEMS chips placed on a credit card-like substrate - to show how the system could be used in standard identification or authentication applications. We have integrated power scavenging to provide DC bias for the MEMS chips through the use of a 915 MHz source in the reader and a RF-DC conversion circuit on the tag. The system enables a high level of protection against typical RFID hacking attacks. There is no need for signal encryption, so back-end infrastructure is minimal. We believe this system would make a viable low-cost, high-security system for a variety of identification and authentication applications.

  5. High-throughput anisotropic plasma etching of polyimide for MEMS

    International Nuclear Information System (INIS)

    Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

    2011-01-01

    This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

  6. A Micromechanical RF Channelizer

    Science.gov (United States)

    Akgul, Mehmet

    The power consumption of a radio generally goes as the number and strength of the RF signals it must process. In particular, a radio receiver would consume much less power if the signal presented to its electronics contained only the desired signal in a tiny percent bandwidth frequency channel, rather than the typical mix of signals containing unwanted energy outside the desired channel. Unfortunately, a lack of filters capable of selecting single channel bandwidths at RF forces the front-ends of contemporary receivers to accept unwanted signals, and thus, to operate with sub-optimal efficiency. This dissertation focuses on the degree to which capacitive-gap transduced micromechanical resonators can achieve the aforementioned RF channel-selecting filters. It aims to first show theoretically that with appropriate scaling capacitive-gap transducers are strong enough to meet the needed coupling requirements; and second, to fully detail an architecture and design procedure needed to realize said filters. Finally, this dissertation provides an actual experimentally demonstrated RF channel-select filter designed using the developed procedures and confirming theoretical predictions. Specifically, this dissertation introduces four methods that make possible the design and fabrication of RF channel-select filters. The first of these introduces a small-signal equivalent circuit for parallel-plate capacitive-gap transduced micromechanical resonators that employs negative capacitance to model the dependence of resonance frequency on electrical stiffness in a way that facilitates the analysis of micromechanical circuits loaded with arbitrary electrical impedances. The new circuit model not only correctly predicts the dependence of electrical stiffness on the impedances loading the input and output electrodes of parallel-plate capacitive-gap transduced micromechanical device, but does so in a visually intuitive way that identifies current drive as most appropriate for

  7. Integrated design of MEMS

    DEFF Research Database (Denmark)

    De Grave, Arnaud; Brissaud, Daniel

    2007-01-01

    Emerging technologies of Micro-Electromechanical Systems (MEMS) are applications such as airbag accelerometers. Micro-products present many physical differences from macro-products. Moreover, there is a high level of integration in multiple fields of physics with strongly coupled effects...... industrial immersion to propose a socio-technological description of the design process and MEMS design tools....

  8. Enabling MEMS technologies for communications systems

    Science.gov (United States)

    Lubecke, Victor M.; Barber, Bradley P.; Arney, Susanne

    2001-11-01

    Modern communications demands have been steadily growing not only in size, but sophistication. Phone calls over copper wires have evolved into high definition video conferencing over optical fibers, and wireless internet browsing. The technology used to meet these demands is under constant pressure to provide increased capacity, speed, and efficiency, all with reduced size and cost. Various MEMS technologies have shown great promise for meeting these challenges by extending the performance of conventional circuitry and introducing radical new systems approaches. A variety of strategic MEMS structures including various cost-effective free-space optics and high-Q RF components are described, along with related practical implementation issues. These components are rapidly becoming essential for enabling the development of progressive new communications systems technologies including all-optical networks, and low cost multi-system wireless terminals and basestations.

  9. Electroplating of low stress permalloy for MEMS

    International Nuclear Information System (INIS)

    Zhang Yonghua; Ding Guifu; Cai Yuli; Wang Hong; Cai Bingchu

    2006-01-01

    With the wafer-bending method and spectrophotometry, the internal stress in electroplated Ni-Fe alloy for MEMS has been investigated as a function of bath concentration. This investigation demonstrated that low concentration plating solution is useful for the decrease of the residual stress in the electrodeposits, and the stress could further decrease with an increase of saccharin additive content. And the change of stress from tensile to compressive was not observed with the increase of the additive content in plating path. The low stress permalloy (Ni 81 Fe 19 ) was reached in our experimental conditions. A bistable electromagnetic RF MEMS switch with deformation-free bilayer cantilever beam was fabricated successfully by electroplated permalloy

  10. Passive inference of collision frequency in magnetized capacitive argon discharge

    Science.gov (United States)

    Binwal, S.; Joshi, J. K.; Karkari, S. K.; Kaw, P. K.; Nair, L.

    2018-03-01

    A non-invasive method of determining the collision frequency νm by measuring the net plasma impendence in a magnetized, capacitive-coupled, radio-frequency (rf) discharge circuit is developed. The collision frequency has been analytically expressed in terms of bulk plasma reactance, wherein standard sheath models have been used to estimate the reactance offered due to the capacitive rf sheaths at the discharge plates. The experimental observations suggest that in the un-magnetized case, νm remains constant over a range of rf current but steadily increases as the background pressure reduces. In the magnetized case, the collision frequency has been observed to decay with the increase in rf current while it remains unaffected by the background pressure. A qualitative discussion has been presented to explain these characteristics.

  11. Modelling of an RF plasma shower

    NARCIS (Netherlands)

    Atanasova, M.; Carbone, E.A.D.; Mihailova, D.B.; Benova, E.; Degrez, G.; Mullen, van der J.J.A.M.

    2012-01-01

    A capacitive radiofrequency (RF) discharge at atmospheric pressure is studied by means of a time-dependent, two-dimensional fluid model. The plasma is created in a stationary argon gas flow guided through two perforated electrodes, hence resembling a shower. The inner electrode, the electrode facing

  12. Packaging of MEMS/MOEMS and nanodevices: reliability, testing, and characterization aspects

    Science.gov (United States)

    Tekin, Tolga; Ngo, Ha-Duong; Wittler, Olaf; Bouhlal, Bouchaib; Lang, Klaus-Dieter

    2011-02-01

    The last decade witnessed an explosive growth in research and development efforts devoted to MEMS devices and packaging. The successfully developed MEMS devices are, for example inkjet, pressure sensors, silicon microphones, accelerometers, gyroscopes, MOEMS, micro fuel cells and emerging MEMS. For the next decade, MEMS/MOEMS and nanodevice based products will penetrate into IT, telecommunications, automotive, defense, life sciences, medical and implantable applications. Forecasts say the MEMS market to be $14 billion by 2012. The packaging cost of MEMS/MOEMS products in general is about 70 percent. Unlike today's electronics IC packaging, their packaging are custom-built and difficult due to the moving structural elements. In order for the moving elements of a MEMS device to move effectively in a well-controlled atmosphere, hermetic sealing of the MEMS device in a cap is necessary. For some MEMS devices, such as resonators and gyroscopes, vacuum packaging is required. Usually, the cap is processed at the wafer level, and thus MEMS packaging is truly a wafer level packaging. In terms of MEMS/MOEMS and nanodevice packaging, there are still many critical issues need to be addressed due to the increasing integration density supported by 3D heterogeneous integration of multi-physic components/layers consisting of photonics, electronics, rf, plasmonics, and wireless. The infrastructure of MEMS/MOEMS and nanodevices and their packaging is not well established yet. Generic packaging platform technologies are not available. Some of critical issues have been studied intensively in the last years. In this paper we will discuss about processes, reliability, testing and characterization of MEMS/MOEMS and nanodevice packaging.

  13. MEMS variable capacitance devices utilizing the substrate: II. Zipping varactors

    KAUST Repository

    Elshurafa, Amro M.; El-Masry, Ezz I.

    2010-01-01

    and tested. To the best of our knowledge, these zipping varactors exhibit the best reported characteristics in PolyMUMPS to date within their category in terms of tuning range, quality factor, required actuation voltage and total area consumed. © 2010 IOP

  14. A robust parasitic-insensitive successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham

    2014-09-01

    In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

  15. A robust parasitic-insensitive successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

    2014-01-01

    In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

  16. Advanced Mechatronics and MEMS Devices

    CERN Document Server

    2013-01-01

    Advanced Mechatronics and MEMS Devicesdescribes state-of-the-art MEMS devices and introduces the latest technology in electrical and mechanical microsystems. The evolution of design in microfabrication, as well as emerging issues in nanomaterials, micromachining, micromanufacturing and microassembly are all discussed at length in this volume. Advanced Mechatronics also provides a reader with knowledge of MEMS sensors array, MEMS multidimensional accelerometer, artificial skin with imbedded tactile components, as well as other topics in MEMS sensors and transducers. The book also presents a number of topics in advanced robotics and an abundance of applications of MEMS in robotics, like reconfigurable modular snake robots, magnetic MEMS robots for drug delivery and flying robots with adjustable wings, to name a few. This book also: Covers the fundamentals of advanced mechatronics and MEMS devices while also presenting new state-of-the-art methodology and technology used in the application of these devices Prese...

  17. Piezoelectric MEMS resonators

    CERN Document Server

    Piazza, Gianluca

    2017-01-01

    This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associate...

  18. Going Fabless with MEMS

    Directory of Open Access Journals (Sweden)

    Bhaskar CHOUBEY

    2011-04-01

    Full Text Available The Microelectromechanical sensors are finding increasing applications in everyday life. However, each MEMS sensor is generally fabricated on its own individual process. This leads to high cost per sensor. It has been suggested the MEMS should and would follow the path of integrated circuits industry, wherein fabless firms could concentrate on design leading pure-foundries to perfect the manufacturing process. With several designs being manufactured on the same process, the installation cost of fabrication would be evenly shared. Simultaneously, multiple project wafer runs are being offered for MEMS processes to encourage design activity in universities as well as startups. This paper reviews the present state of this transition through an experience of designing and manufacturing microelectromechanical resonators on different processes.

  19. MEMS fluidic actuator

    Science.gov (United States)

    Kholwadwala, Deepesh K [Albuquerque, NM; Johnston, Gabriel A [Trophy Club, TX; Rohrer, Brandon R [Albuquerque, NM; Galambos, Paul C [Albuquerque, NM; Okandan, Murat [Albuquerque, NM

    2007-07-24

    The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

  20. RF transformer

    Science.gov (United States)

    Smith, James L.; Helenberg, Harold W.; Kilsdonk, Dennis J.

    1979-01-01

    There is provided an improved RF transformer having a single-turn secondary of cylindrical shape and a coiled encapsulated primary contained within the secondary. The coil is tapered so that the narrowest separation between the primary and the secondary is at one end of the coil. The encapsulated primary is removable from the secondary so that a variety of different capacity primaries can be utilized with one secondary.

  1. EDITORIAL: International MEMS Conference 2006

    Science.gov (United States)

    Tay, Francis E. H.; Jianmin, Miao; Iliescu, Ciprian

    2006-04-01

    The International MEMS conference (iMEMS2006) organized by the Institute of Bioengineering and Nanotechnology and Nanyang Technological University aims to provide a platform for academicians, professionals and industrialists in various related fields from all over the world to share and learn from each other. Of great interest is the incorporation of the theme of life sciences application using MEMS. It is the desire of this conference to initiate collaboration and form network of cooperation. This has continued to be the objective of iMEMS since its inception in 1997. The technological advance of MEMS over the past few decades has been truly exciting in terms of development and applications. In order to participate in this rapid development, a conference involving delegates from within the MEMS community and outside the community is very meaningful and timely. With the receipt of over 200 articles, delegates related to MEMS field from all over the world will share their perspectives on topics such as MEMS/MST Design, MEMS Teaching and Education, MEMS/MST Packaging, MEMS/MST Fabrication, Microsystems Applications, System Integration, Wearable Devices, MEMSWear and BioMEMS. Invited speakers and delegates from outside the field have also been involved to provide challenges, especially in the life sciences field, for the MEMS community to potentially address. The proceedings of the conference will be published as an issue in the online Journal of Physics: Conference Series and this can reach a wider audience and will facilitate the reference and citation of the work presented in the conference. We wish to express our deep gratitude to the International Scientific Committee members and the organizing committee members for contributing to the success of this conference. We would like to thank all the delegates, speakers and sponsors from all over the world for presenting and sharing their perspectives on topics related to MEMS and the challenges that MEMS can

  2. A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

    NARCIS (Netherlands)

    Groen, Maarten; Wu, Kai; Brookhuis, Robert Anton; van Houwelingen, Marc J.; Brouwer, Dannis Michel; Lötters, Joost Conrad; Wiegerink, Remco J.

    2014-01-01

    We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve.

  3. MEMS and the microbe

    NARCIS (Netherlands)

    Ingham, C.J.; Vlieg, J.E.T.V.H.

    2008-01-01

    In recent years, relatively simple MEMS fabrications have helped accelerate our knowledge of the microbial cell. Current progress and challenges in the application of lab-on-a-chip devices to the viable microbe are reviewed. Furthermore, the degree to which microbiologists are becoming the engineers

  4. Microelectromechanical Systems (MEMS)

    Indian Academy of Sciences (India)

    As a field, Microelectromechanical Systems (MEMS) has matured over the last two decades to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of ...

  5. Microelectromechanical Systems (MEMS)

    Indian Academy of Sciences (India)

    to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of a MEMS device or structure using conven- tional CMOS processes or their variants was the ...

  6. MEMS Solar Generators

    OpenAIRE

    Grbovic, Dragoslav; Osswald, Sebastian

    2011-01-01

    Approved for public release; distribution is unlimited Using MEMS bimaterial structures to build highly efficient solar energy generators. This is a novel approach that utilizes developments in the area of bimaterial sensors and applies them in the field of solar energy harvesting.

  7. Three dimensional MEMS supercapacitors

    OpenAIRE

    Sun, Wei

    2011-01-01

    The overall objective of this research is to achieve compact supercapacitors with high capacitance, large power density, and long cycle life for using as micropower sources to drive low power devices and sensors. The main shortcoming of supercapacitors as a power source is that its energy density typically is about 1/10 of that of batteries. To achieve compact supercapacitors of large energy density, supercapacitors must be developed with high capacitance and power density which are mainly de...

  8. European MEMS foundries

    Science.gov (United States)

    Salomon, Patric R.

    2003-01-01

    According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

  9. Capacitive chemical sensor

    Science.gov (United States)

    Manginell, Ronald P; Moorman, Matthew W; Wheeler, David R

    2014-05-27

    A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

  10. RF sheaths for arbitrary B field angles

    Science.gov (United States)

    D'Ippolito, Daniel; Myra, James

    2014-10-01

    RF sheaths occur in tokamaks when ICRF waves encounter conducting boundaries and accelerate electrons out of the plasma. Sheath effects reduce the efficiency of ICRF heating, cause RF-specific impurity influxes from the edge plasma, and increase the plasma-facing component damage. The rf sheath potential is sensitive to the angle between the B field and the wall, the ion mobility and the ion magnetization. Here, we obtain a numerical solution of the non-neutral rf sheath and magnetic pre-sheath equations (for arbitrary values of these parameters) and attempt to infer the parametric dependences of the Child-Langmuir law. This extends previous work on the magnetized, immobile ion regime. An important question is how the rf sheath voltage distributes itself between sheath and pre-sheath for various B field angles. This will show how generally previous estimates of the rf sheath voltage and capacitance were reasonable, and to improve the RF sheath BC. Work supported by US DOE grants DE-FC02-05ER54823 and DE-FG02-97ER54392.

  11. Narrow gap electronegative capacitive discharges

    Energy Technology Data Exchange (ETDEWEB)

    Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

    2013-10-15

    Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

  12. Scaled RF cavity for the Vinca cyclotron; Modelni poskusi visokofrekvencnega dela za ciklotron u Vinci

    Energy Technology Data Exchange (ETDEWEB)

    Paulin, A [VTS, Univerza Maribor, Maribor (Yugoslavia); Bezic, N; Anicin, I [Institute of nuclear sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

    1983-07-01

    RF resonator reduced five times is described. The model was constructed according to former considerations. The measurements have shown that the predictions had been correct with respect to the capacitively terminated as well as the helix coaxial guide. (author)

  13. Converting MEMS technology into profits

    Science.gov (United States)

    Bryzek, Janusz

    1998-08-01

    This paper discusses issues related to transitioning a company from the advanced technology development phase (with a particular focus on MEMS) to a profitable business, with emphasis on start-up companies. It includes several case studies from (primarily) NovaSensor MEMS development history. These case studies illustrate strategic problems with which advanced MEMS technology developers have to be concerned. Conclusions from these case studies could be used as checkpoints for future MEMS developers to increase probability of profitable operations. The objective for this paper is to share the author's experience from multiple MEMS start-ups to accelerate development of the MEMS market by focusing state- of-the-art technologists on marketing issues.

  14. From MEMS to nanomachine

    International Nuclear Information System (INIS)

    Esashi, Masayoshi; Ono, Takahito

    2005-01-01

    Practically applicable microelectromechanical systems (MEMS) and nanomachines have been developed by applying dry processes. Deep reactive ion etching (RIE) of silicon and its applications to an electrostatically levitated rotational gyroscope, a fibre optic blood pressure sensor and in micro-actuated probes are described. High density electrical feedthrough in glass is made using deep RIE of glass and electroplating of metal. Multi-probe data storage system has been developed using the high density electrical feedthrough in glass. Chemical vapour deposition (CVD) of different materials have been developed for MEMS applications; trench-refill using SiO 2 CVD, microstructures using Silicon carbide CVD for glass mold press and selective CVD of carbon nanotube for electron field emitter. Multi-column electron beam lithography system has been developed using the electron field emitter. (topical review)

  15. 10–25 GHz frequency reconfigurable MEMS 5-bit phase shifter using push–pull actuator based toggle mechanism

    International Nuclear Information System (INIS)

    Dey, Sukomal; Koul, Shiban K

    2015-01-01

    This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using radio frequency microelectromechanical system (RF MEMS) technology. The phase shifter is based on the distributed MEMS transmission line (DMTL) concept utilizing a MEMS varactor. The main source of frequency tuning in this work is a bridge actuation mechanism followed by capacitance variation. Two stages of actuation mechanisms (push and pull) are used to achieve a 2:1 tuning ratio. Accurate control of the actuation voltage between the pull to push stages contributes differential phase shift over the band of interest. The functional behavior of the push–pull actuation over the phase shifter application is theoretically established, experimentally investigated and validated with simulation. The phase shifter is fabricated monolithically using a gold based surface micromachining process on an alumina substrate. The individual primary phase-bits (11.25°/22.5°/45°/90°/180°) that are the fundamental building blocks of the complete 5-bit phase shifter are designed, fabricated and experimentally characterized from 10–25 GHz for specific applications. Finally, the complete 5-bit phase shifter demonstrates an average phase error of 4.32°, 2.8°, 1° and 1.58°, an average insertion loss of 3.76, 4.1, 4.2 and 4.84 dB and an average return loss of 11.7, 12, 14 and 11.8 dB at 10, 12, 17.2 and 25 GHz, respectively. To the best of the authors’ knowledge, this is the first reported band tunable stand alone 5-bit phase shifter in the literature which can work over the large spectrum for different applications. The total area of the 5-bit phase shifter is 15.6 mm 2 . Furthermore, the cold-switched reliability of the unit cell and the complete 5-bit MEMS phase shifter are extensively investigated and presented. (paper)

  16. A versatile multi-user polyimide surface micromachinning process for MEMS applications

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2015-04-01

    This paper reports a versatile multi-user micro-fabrication process for MEMS devices, the \\'Polyimide MEMS Multi-User Process\\' (PiMMPs). The reported process uses polyimide as the structural material and three separate metallization layers that can be interconnected depending on the desired application. This process enables for the first time the development of out-of-plane compliant mechanisms that can be designed using six different physical principles for actuation and sensing on a wafer from a single fabrication run. These principles are electrostatic motion, thermal bimorph actuation, capacitive sensing, magnetic sensing, thermocouple-based sensing and radio frequency transmission and reception. © 2015 IEEE.

  17. Electromagnetic actuation in MEMS switches

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Mátéfi-Tempfli, Mária; Chemnitz, Steffen

    . Electromagnetic actuation is a very promising approach to operate such MEMS and Power MEMS devices, due to the long range, reproducible and strong forces generated by this method, among other advantages. However, the use of electromagnetic actuation in such devices requires the use of thick magnetic films, which...

  18. Membrane capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Wal, van der A.

    2010-01-01

    Membrane capacitive deionization (MCDI) is an ion-removal process based on applying an electrical potential difference across an aqueous solution which flows in between oppositely placed porous electrodes, in front of which ion-exchange membranes are positioned. Due to the applied potential, ions

  19. Capacitance for carbon capture

    International Nuclear Information System (INIS)

    Landskron, Kai

    2018-01-01

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO 2 into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Capacitance for carbon capture

    Energy Technology Data Exchange (ETDEWEB)

    Landskron, Kai [Department of Chemistry, Lehigh University, Bethlehem, PA (United States)

    2018-03-26

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO{sub 2} into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. A flexible capacitive tactile sensing array with floating electrodes

    International Nuclear Information System (INIS)

    Cheng, M-Y; Huang, X-H; Ma, C-W; Yang, Y-J

    2009-01-01

    In this work, we present the development of a capacitive tactile sensing array realized by using MEMS fabrication techniques and flexible printed circuit board (FPCB) technologies. The sensing array, which consists of two micromachined polydimethlysiloxane (PDMS) structures and a FPCB, will be used as the artificial skin for robot applications. Each capacitive sensing element comprises two sensing electrodes and a common floating electrode. The sensing electrodes and the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrode is patterned on one of the PDMS structures. This special design can effectively reduce the complexity of the device structure and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions are measured and discussed. The corresponding scanning circuits are also designed and implemented. The tactile images induced by the PMMA stamps of different shapes are also successfully captured by a fabricated 8 × 8 array

  2. MEMS cost analysis from laboratory to industry

    CERN Document Server

    Freng, Ron Lawes

    2016-01-01

    The World of MEMS; Chapter 2: Basic Fabrication Processes; Chapter 3: Surface Microengineering. High Aspect Ratio Microengineering; Chapter 5: MEMS Testing; Chapter 6: MEMS Packaging. Clean Rooms, Buildings and Plant; Chapter 8: The MEMSCOST Spreadsheet; Chapter 9: Product Costs - Accelerometers. Product Costs - Microphones. MEMS Foundries. Financial Reporting and Analysis. Conclusions.

  3. Micromachined high-performance RF passives in CMOS substrate

    International Nuclear Information System (INIS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  4. Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

    International Nuclear Information System (INIS)

    Wang Hongyu; Sun Peng; Zhao Shuangyun; Li Yang; Jiang Wei

    2016-01-01

    We analyzed perpendicularly configured dual-frequency (DF) capacitively coupled plasmas (CCP). In this configuration, two pairs of electrodes are arranged oppositely, and the discharging is perpendicularly driven by two radio frequency (RF) sources. Particle-in-cell/Monte Carlo (PIC/MC) simulation showed that the configuration had some advantages as this configuration eliminated some dual frequency coupling effects. Some variation and potential application of the discharging configuration is discussed briefly. (paper)

  5. Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems

    Science.gov (United States)

    Francis, Laurent A.; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis

    2013-03-01

    The impact of different types of radiation on the electromechanical properties of materials used in microfabrication and on the capacitive and piezoresistive transduction mechanisms of MEMS is investigated. MEMS technologies could revolutionize avionics, satellite and space applications provided that the stress conditions which can compromise the reliability of microsystems in these environments are well understood. Initial tests with MEMS revealed a vulnerability of some types of devices to radiation induced dielectric charging, a physical mechanism which also affects microelectronics, however integration of novel functional materials in microfabrication and the current trend to substitute SiO2 with high-k dielectrics in ICs pose new questions regarding reliability in radiation environments. The performance of MEMS devices with moving parts could also degrade due to radiation induced changes in the mechanical properties of the materials. It is thus necessary to investigate the effects of radiation on the properties of thin films used in microfabrication and here we report on tests with γ, high energy protons and fast neutrons radiation. Prototype SOI based MEMS magnetometers which were developed in UCL are also used as test vehicles to investigate radiation effects on the reliability of magnetically actuated and capacitively coupled MEMS.

  6. Passive RF component technology materials, techniques, and applications

    CERN Document Server

    Wang, Guoan

    2012-01-01

    Focusing on novel materials and techniques, this pioneering volume provides you with a solid understanding of the design and fabrication of smart RF passive components. You find comprehensive details on LCP, metal materials, ferrite materials, nano materials, high aspect ratio enabled materials, green materials for RFID, and silicon micromachining techniques. Moreover, this practical book offers expert guidance on how to apply these materials and techniques to design a wide range of cutting-edge RF passive components, from MEMS switch based tunable passives and 3D passives, to metamaterial-bas

  7. Control of Bouncing in MEMS Switches Using Double Electrodes

    KAUST Repository

    Abdul Rahim, Farhan

    2016-08-09

    This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both lumped parameter and beam models. The simulations of bouncing and its control are discussed. Comparison between the new proposed method and other available control techniques is also made. The Galerkin method is applied on the beam model accounting for the nonlinear electrostatic force, squeeze film damping, and surface contact effect. The results indicate that it is possible to reduce bouncing and hence beam degradation, by the use of double electrodes.

  8. A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

    Science.gov (United States)

    Groen, Maarten S.; Wu, Kai; Brookhuis, Robert A.; van Houwelingen, Marc J.; Brouwer, Dannis M.; Lötters, Joost C.; Wiegerink, Remco J.

    2014-12-01

    We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch.

  9. A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

    International Nuclear Information System (INIS)

    Groen, Maarten S; Wu, Kai; Brookhuis, Robert A; Lötters, Joost C; Wiegerink, Remco J; Van Houwelingen, Marc J; Brouwer, Dannis M

    2014-01-01

    We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch. (paper)

  10. Resonant Magnetic Field Sensors Based On MEMS Technology

    Directory of Open Access Journals (Sweden)

    Elías Manjarrez

    2009-09-01

    Full Text Available Microelectromechanical systems (MEMS technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration.

  11. Resonant Magnetic Field Sensors Based On MEMS Technology

    Science.gov (United States)

    Herrera-May, Agustín L.; Aguilera-Cortés, Luz A.; García-Ramírez, Pedro J.; Manjarrez, Elías

    2009-01-01

    Microelectromechanical systems (MEMS) technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI) and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration. PMID:22408480

  12. MEMS digital parametric loudspeaker

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2016-03-23

    This paper reports on the design and fabrication of MEMS actuator arrays suitable for Digital Sound reconstruction and Parametric Directional Loudspeakers. Two distinct versions of the device were fabricated: one using the electrostatic principle actuation and the other one, the piezoelectric principle. Both versions used similar membrane dimensions, with a diameter of 500 μm. These devices are the smallest Micro-Machined Ultrasound Transducer (MUT) arrays that can be operated for both modes: Digital Sound Reconstruction and Parametric Loudspeaker. The chips consist of an array with 256 transducers, in a footprint of 12 mm by 12 mm. The total single chip size is: 2.3 cm by 2.3 cm, including the contact pads. © 2016 IEEE.

  13. Tribology and MEMS

    International Nuclear Information System (INIS)

    Williams, J A; Le, H R

    2006-01-01

    Micro-electro-mechanical system, MEMS, is a rapidly growing interdisciplinary technology dealing with the design and manufacture of miniaturized machines with the major dimensions at the scale of tens, to perhaps hundreds, of micrometres. Because they depend on the cube of a representative dimension, component masses and inertias rapidly become small as size decreases whereas surface and tribological effects, which often depend on area, become increasingly important. Although our explanations of macroscopic tribological phenomena often involve individual events occurring at the micro-scale, when the overall component size is itself miniaturized it may be necessary to re-evaluate some conventional tribological solutions. While the absolute loads are small in such micro-devices, the tribological requirements, especially in terms of longevity-which may be limited by wear rather than friction-are particularly demanding and will require imaginative and novel solutions. (topical review)

  14. MEMS digital parametric loudspeaker

    KAUST Repository

    Carreno, Armando Arpys Arevalo; Castro, David; Conchouso Gonzalez, David; Kosel, Jü rgen; Foulds, Ian G.

    2016-01-01

    This paper reports on the design and fabrication of MEMS actuator arrays suitable for Digital Sound reconstruction and Parametric Directional Loudspeakers. Two distinct versions of the device were fabricated: one using the electrostatic principle actuation and the other one, the piezoelectric principle. Both versions used similar membrane dimensions, with a diameter of 500 μm. These devices are the smallest Micro-Machined Ultrasound Transducer (MUT) arrays that can be operated for both modes: Digital Sound Reconstruction and Parametric Loudspeaker. The chips consist of an array with 256 transducers, in a footprint of 12 mm by 12 mm. The total single chip size is: 2.3 cm by 2.3 cm, including the contact pads. © 2016 IEEE.

  15. Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

    International Nuclear Information System (INIS)

    Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

    1982-01-01

    The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

  16. On Packaging of MEMS. Simulation of Transfer Moulding and Packaging Stress and their Effect on a Family of piezo-resistive Pressure Sensors

    OpenAIRE

    Krondorfer, Rudolf H.

    2004-01-01

    Micro Electro Mechanical Systems (MEMS) produced to date include IR detectors, accelerometers, pressure sensors, micro lenses, actuators, chemical sensors, gear drives, RF devices, optical processor chips, micro robots and devices for biomedical analysis. The track for tomorrow has already been set and products like 3D TV, physician on a chip, lab on a chip, micro aircraft and food safety sensors will be developed when the technology matures and the market is ready. Todays MEMS fabricatio...

  17. Capacitive discharge exciplex lamps

    Energy Technology Data Exchange (ETDEWEB)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F [High Current Electronics Institute, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2005-09-07

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications.

  18. Capacitive discharge exciplex lamps

    International Nuclear Information System (INIS)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F

    2005-01-01

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications

  19. Capacitance of circular patch resonator

    International Nuclear Information System (INIS)

    Miano, G.; Verolino, L.; Naples Univ.; Panariello, G.; Vaccaro, V.G.; Naples Univ.

    1995-11-01

    In this paper the capacitance of the circular microstrip patch resonator is computed. It is shown that the electrostatic problem can be formulated as a system of dual integral equations, and the most interesting techniques of solutions of these systems are reviewed. Some useful approximated formulas for the capacitance are derived and plots of the capacitance are finally given in a wide range of dielectric constants

  20. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  1. Revisiting the Anomalous rf Field Penetration into a Warm Plasma

    International Nuclear Information System (INIS)

    Kaganovich, Igor D.; Polomarov, Oleg V.; Theodosiou, Constantine E.

    2005-01-01

    Radio-frequency [rf] waves do not penetrate into a plasma and are damped within it. The electric field of the wave and plasma current are concentrated near the plasma boundary in a skin layer. Electrons can transport the plasma current away from the skin layer due to their thermal motion. As a result, the width of the skin layer increases when electron temperature effects are taken into account. This phenomenon is called anomalous skin effect. The anomalous penetration of the rf electric field occurs not only for transversely propagating to the plasma boundary wave (inductively coupled plasmas) but also for the wave propagating along the plasma boundary (capacitively coupled plasmas). Such anomalous penetration of the rf field modifies the structure of the capacitive sheath. Recent advances in the nonlinear, non-local theory of the capacitive sheath are reported. It is shown that separating the electric field profile into exponential and non-exponential parts yields an efficient qualitative and quantitative description of the anomalous skin effect in both inductively and capacitively coupled plasma

  2. A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

    International Nuclear Information System (INIS)

    Dong Linxi; Chen Jindan; Huo Weihong; Li Yongjie; Sun Lingling; Yan Haixia

    2009-01-01

    The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30: 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.

  3. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  4. Microelectromechanical (MEM) thermal actuator

    Science.gov (United States)

    Garcia, Ernest J [Albuquerque, NM; Fulcher, Clay W. G. [Sandia Park, NM

    2012-07-31

    Microelectromechanical (MEM) buckling beam thermal actuators are disclosed wherein the buckling direction of a beam is constrained to a desired direction of actuation, which can be in-plane or out-of-plane with respect to a support substrate. The actuators comprise as-fabricated, linear beams of uniform cross section supported above the substrate by supports which rigidly attach a beam to the substrate. The beams can be heated by methods including the passage of an electrical current through them. The buckling direction of an initially straight beam upon heating and expansion is controlled by incorporating one or more directional constraints attached to the substrate and proximal to the mid-point of the beam. In the event that the beam initially buckles in an undesired direction, deformation of the beam induced by contact with a directional constraint generates an opposing force to re-direct the buckling beam into the desired direction. The displacement and force generated by the movement of the buckling beam can be harnessed to perform useful work, such as closing contacts in an electrical switch.

  5. Effect of capacitive feedback on the characteristics of direct current superconducting quantum interference device coupled to a multiturn input coil

    International Nuclear Information System (INIS)

    Minotani, T.; Enpuku, K.; Kuroki, Y.

    1997-01-01

    Distortion of voltage versus flux (V endash Φ) relation of a dc superconducting quantum interference device (SQUID) coupled to a multiturn input coil is studied. First, resonant behavior of the coupled SQUID due to the so-called input coil resonance is clarified. It is shown that large rf noise flux is produced by the input coil resonance. This rf flux is added to the SQUID, and results in large rf voltage across the SQUID. In the case where parasitic capacitance exists between the input coil and the ground of the SQUID, this rf voltage produces the rf flux again, i.e., a feedback loop for the rf flux is formed. Taking into account this capacitive feedback, we study the V endash Φ relation of the coupled SQUID. Numerical simulation shows that the V endash Φ relation is distorted considerably by the feedback mechanism. The simulation result explains well the experimental V endash Φ relation of the coupled SQUID. The combination of the input coil resonance with the capacitive feedback is the most likely mechanism for the distorted V endash Φ curve of the coupled SQUID. The condition for occurrence of the distorted V endash Φ curve due to the capacitive feedback is also obtained, and methods to prevent degradation are discussed. copyright 1997 American Institute of Physics

  6. MEMS Reliability Assurance Activities at JPL

    Science.gov (United States)

    Kayali, S.; Lawton, R.; Stark, B.

    2000-01-01

    An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.

  7. Modeling nonlinearities in MEMS oscillators.

    Science.gov (United States)

    Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

    2013-08-01

    We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

  8. Capacitively coupled radio-frequency discharges in nitrogen at low pressures

    KAUST Repository

    Alves, Luí s Lemos; Marques, Luí s S A; Pintassilgo, Carlos D.; Wattieaux, Gaë tan; Es-sebbar, Et-touhami; Berndt, Johannes; Kovačević, Eva; Carrasco, Nathalie; Boufendi, Laï fa; Cernogora, Guy

    2012-01-01

    This paper uses experiments and modelling to study capacitively coupled radio-frequency (rf) discharges in pure nitrogen, at 13.56MHz frequency, 0.11 mbar pressures and 230W coupled powers. Experiments performed on two similar (not twin) setups

  9. Design and Fabrication of a Reconfigurable MEMS-Based Antenna

    KAUST Repository

    Martinez, Miguel Angel Galicia

    2011-06-22

    This thesis presents the design and fabrication of a customized in house Micro-Electro-Mechanical-Systems (MEMS) process based on-chip antenna that is both frequency and polarization reconfigurable. It is designed to work at both 60 GHz and 77 GHz through MEMS switches. This antenna can also work in both horizontal and vertical linear polarizations by utilizing a moveable plate. The design is intended for Wireless Personal Area Networks (WPAN) and automotive radar applications. Typical on-chip antennas are inefficient and difficult to reconfigure. Therefore, the focus of this work is to develop an efficient on-chip antenna solution, which is reconfigurable in frequency and in polarization. A fractal bowtie antenna is employed for this thesis, which achieves frequency reconfigurability through MEMS switches. The design is simulated in industry standard Electromagnetic (EM) simulator Ansoft HFSS. A novel concept for horizontal to vertical linear polarization agility is introduced which incorporates a moveable polymer plate. For this work, a microprobe is used to move the plate from the horizontal to vertical position. For testing purposes, a novel mechanism has been designed in order to feed the antenna with RF-probes in both horizontal and vertical positions. A simulated gain of approximately 0 dB is achieved at both target frequencies (60 and 77 GHz), in both horizontal and vertical positions. In all the cases mentioned above (both frequencies and positions), the antenna is well matched (< -10 dB) to the 50 Ω system impedance. Similarly, the radiation nulls are successfully shifted by changing the position of the antenna from horizontal to vertical. The complete design and fabrication of the reconfigurable MEMS antenna has been done at KAUST facilities. Some challenges have been encountered during its realization due to the immaturity of the customized MEMS fabrication process. Nonetheless, a first fabrication attempt has highlighted such shortcomings. According

  10. Capacitive gauging apparatus

    International Nuclear Information System (INIS)

    Walton, H.

    1985-01-01

    Apparatus for gauging physical dimensions of solid or tubular bodies (e.g. a nuclear fuel pellet) comprises a capacitive transducer having electrodes forming diametrically arranged pairs of capacitors and means for connecting the pairs, preferably sequentially, in an arm of a four arm electrical network. For circumferential scanning of a solid body along its length, the body is moved along a path of travel through head assembly including the transducer by means of plungers with the axis of the body being coincident with the axis of the transducer. As the body moves through the transducer the diametrically arranged pairs of capacitors scan the surface to result in a surface profile of the body. For scanning the bore of a pipe or tube the transducer is inserted as a probe and moved along the bore of the pipe or tube, means being provided for maintaining the probe coaxial with the pipe or tube. (author)

  11. Structured synthesis of MEMS using evolutionary approaches

    DEFF Research Database (Denmark)

    Fan, Zhun; Wang, Jiachuan; Achiche, Sofiane

    2008-01-01

    In this paper, we discuss the hierarchy that is involved in a typical MEMS design and how evolutionary approaches can be used to automate the hierarchical synthesis process for MEMS. The paper first introduces the flow of a structured MEMS design process and emphasizes that system-level lumped...

  12. A six degrees of freedom mems manipulator

    NARCIS (Netherlands)

    de Jong, B.R.

    2006-01-01

    This thesis reports about a six degrees of freedom (DOF) precision manipulator in MEMS, concerning concept generation for the manipulator followed by design and fabrication (of parts) of the proposed manipulation concept in MEMS. Researching the abilities of 6 DOF precision manipulation in MEMS is

  13. Electrostatic MEMS devices with high reliability

    Science.gov (United States)

    Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

    2015-02-24

    The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

  14. Efficiency of Capacitively Loaded Converters

    DEFF Research Database (Denmark)

    Andersen, Thomas; Huang, Lina; Andersen, Michael A. E.

    2012-01-01

    This paper explores the characteristic of capacitance versus voltage for dielectric electro active polymer (DEAP) actuator, 2kV polypropylene film capacitor as well as 3kV X7R multi layer ceramic capacitor (MLCC) at the beginning. An energy efficiency for capacitively loaded converters...... is introduced as a definition of efficiency. The calculated and measured efficiency curves for charging DEAP actuator, polypropylene film capacitor and X7R MLCC are provided and compared. The attention has to be paid for the voltage dependent capacitive load, like X7R MLCC, when evaluating the charging...... polypropylene film capacitor can be the equivalent capacitive load. Because of the voltage dependent characteristic, X7R MLCC cannot be used to replace the DEAP actuator. However, this type of capacitor can be used to substitute the capacitive actuator with voltage dependent property at the development phase....

  15. Simulation of a low frequency Z-axis SU-8 accelerometer in coventorware and MEMS+

    KAUST Repository

    Carreno, Armando Arpys Arevalo

    2013-04-01

    This paper presents the simulation of a z-axis SU-8 capacitive accelerometer. The study consists of a modal analysis of the modeled accelerometer, a study relating capacitance to acceleration, capacitance to deflection, an effective spring constant calculation, and a comparison of results achieved using CoventorWare® ANALYZER™ and MEMS+®. A fabricated energy harvester design from [1] was used for modeling and simulation in this study, with a four spring attachment of a 650μm×650μm; ×110μm proof mass of 4.542×10-8 kg. At rest, the spacing between electrodes is 4μm along the z-axis, and at 1.5g acceleration, there is 1.9μm spacing between electrodes, at which point pull in occurs for a 1V voltage. © 2013 IEEE.

  16. RF feedback for KEKB

    Energy Technology Data Exchange (ETDEWEB)

    Ezura, Eizi; Yoshimoto, Shin-ichi; Akai, Kazunori [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1996-08-01

    This paper describes the present status of the RF feedback development for the KEK B-Factory (KEKB). A preliminary experiment concerning the RF feedback using a parallel comb-filter was performed through a choke-mode cavity and a klystron. The RF feedback has been tested using the beam of the TRISTAN Main Ring, and has proved to be effective in damping the beam instability. (author)

  17. RF guns: a review

    International Nuclear Information System (INIS)

    Travier, C.

    1990-06-01

    Free Electron Lasers and future linear colliders require very bright electron beams. Conventional injectors made of DC guns and RF bunchers have intrinsic limitations. The recently proposed RF guns have already proven their capability to produce bright beams. The necessary effort to improve further these performances and to gain reliability is now undertaken by many laboratories. More than twenty RF gun projects both thermionic and laser-driven are reviewed. Their specific characteristics are outlined and their nominal performances are given

  18. MEMS applications in space exploration

    Science.gov (United States)

    Tang, William C.

    1997-09-01

    Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. MEMS is one of the key enabling technology to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

  19. MEMS linear and nonlinear statics and dynamics

    CERN Document Server

    Younis, Mohammad I

    2011-01-01

    MEMS Linear and Nonlinear Statics and Dynamics presents the necessary analytical and computational tools for MEMS designers to model and simulate most known MEMS devices, structures, and phenomena. This book also provides an in-depth analysis and treatment of the most common static and dynamic phenomena in MEMS that are encountered by engineers. Coverage also includes nonlinear modeling approaches to modeling various MEMS phenomena of a nonlinear nature, such as those due to electrostatic forces, squeeze-film damping, and large deflection of structures. The book also: Includes examples of nume

  20. Plasma diagnosis of RF discharge by using impedance measurement

    International Nuclear Information System (INIS)

    Huang Jianjun; Teuner, D.

    2001-01-01

    It is presented that the method known from network analysis with home-made probe and experimental setup to measure current, voltage and phase angle of RF discharge in He gas more accurately. The sheath thickness and the real and imaginary parts of the plasma impedance were obtained by using the equivalent circuit model and taking account stray capacitances of the set-up. In addition, making use of Godyak's RF discharge simple model, the electron density in the discharge was calculated at different pressure and current density

  1. Ferroelectric negative capacitance domain dynamics

    Science.gov (United States)

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2018-05-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

  2. Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

    Science.gov (United States)

    Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

    1995-01-01

    In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

  3. The Capacitive Magnetic Field Sensor

    Science.gov (United States)

    Zyatkov, D. O.; Yurchenko, A. V.; Balashov, V. B.; Yurchenko, V. I.

    2016-01-01

    The results of a study of sensitive element magnetic field sensor are represented in this paper. The sensor is based on the change of the capacitance with an active dielectric (ferrofluid) due to the magnitude of magnetic field. To prepare the ferrofluid magnetic particles are used, which have a followingdispersion equal to 50 brand 5BDSR. The dependence of the sensitivity of the capacitive element from the ferrofluid with different dispersion of magnetic particles is considered. The threshold of sensitivity and sensitivity of a measuring cell with ferrofluid by a magnetic field was determined. The experimental graphs of capacitance change of the magnitude of magnetic field are presented.

  4. Virtual electrical capacitance tomography sensor

    International Nuclear Information System (INIS)

    Li, Y; Yang, W Q

    2005-01-01

    Electrical capacitance tomography (ECT) is an effective technique for elucidating the distribution of dielectric materials inside closed pipes or vessels. This paper describes a virtual electrical capacitance tomography (VECT) system, which can simulate a range of sensor and hardware configurations and material distributions. A selection of popular image reconstruction algorithms has been made available and image error and capacitance error tools enable their performance to be evaluated and compared. Series of frame-by-frame results can be stored for simulating real-time dynamic flows. The system is programmed in Matlab with DOS functions. It is convenient to use and low-cost to operate, providing an effective tool for engineering experiment

  5. MEMS based digital transform spectrometers

    Science.gov (United States)

    Geller, Yariv; Ramani, Mouli

    2005-09-01

    Earlier this year, a new breed of Spectrometers based on Micro-Electro-Mechanical-System (MEMS) engines has been introduced to the commercial market. The use of these engines combined with transform mathematics, produces powerful spectrometers at unprecedented low cost in various spectral regions.

  6. MEMS reliability: coming of age

    Science.gov (United States)

    Douglass, Michael R.

    2008-02-01

    In today's high-volume semiconductor world, one could easily take reliability for granted. As the MOEMS/MEMS industry continues to establish itself as a viable alternative to conventional manufacturing in the macro world, reliability can be of high concern. Currently, there are several emerging market opportunities in which MOEMS/MEMS is gaining a foothold. Markets such as mobile media, consumer electronics, biomedical devices, and homeland security are all showing great interest in microfabricated products. At the same time, these markets are among the most demanding when it comes to reliability assurance. To be successful, each company developing a MOEMS/MEMS device must consider reliability on an equal footing with cost, performance and manufacturability. What can this maturing industry learn from the successful development of DLP technology, air bag accelerometers and inkjet printheads? This paper discusses some basic reliability principles which any MOEMS/MEMS device development must use. Examples from the commercially successful and highly reliable Digital Micromirror Device complement the discussion.

  7. MEMS for Space Flight Applications

    Science.gov (United States)

    Lawton, R.

    1998-01-01

    Micro-Electrical Mechanical Systems (MEMS) are entering the stage of design and verification to demonstrate the utility of the technology for a wide range of applications including sensors and actuators for military, space, medical, industrial, consumer, automotive and instrumentation products.

  8. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-01-01

    In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

  9. RF Energy Compressor

    International Nuclear Information System (INIS)

    Farkas, Z.D.

    1980-02-01

    The RF Energy Compressor, REC described here, transforms cw rf into periodic pulses using an energy storage cavity, ESC, whose charging is controlled by 180 0 bi-phase modulation, PSK, and external Q switching, βs. Compression efficiency, C/sub e/, of 100% can be approached at any compression factor C/sub f/

  10. Polyimide and Metals MEMS Multi-User Processes

    KAUST Repository

    Arevalo, Arpys

    2016-11-01

    The development of a polyimide and metals multi-user surface micro-machining process for Micro-electro-mechanical Systems (MEMS) is presented. The process was designed to be as general as possible, and designed to be capable to fabricate different designs on a single silicon wafer. The process was not optimized with the purpose of fabricating any one specific device but can be tweaked to satisfy individual needs depending on the application. The fabrication process uses Polyimide as the structural material and three separated metallization layers that can be interconnected depending on the desired application. The technology allows the development of out-of-plane compliant mechanisms, which can be combined with six variations of different physical principles for actuation and sensing on a single processed silicon wafer. These variations are: electrostatic motion, thermal bimorph actuation, capacitive sensing, magnetic sensing, thermocouple-based sensing and radio frequency transmission and reception.

  11. Practical RF system design

    CERN Document Server

    Egan, William F

    2003-01-01

    he ultimate practical resource for today's RF system design professionals Radio frequency components and circuits form the backbone of today's mobile and satellite communications networks. Consequently, both practicing and aspiring industry professionals need to be able to solve ever more complex problems of RF design. Blending theoretical rigor with a wealth of practical expertise, Practical RF System Design addresses a variety of complex, real-world problems that system engineers are likely to encounter in today's burgeoning communications industry with solutions that are not easily available in the existing literature. The author, an expert in the field of RF module and system design, provides powerful techniques for analyzing real RF systems, with emphasis on some that are currently not well understood. Combining theoretical results and models with examples, he challenges readers to address such practical issues as: * How standing wave ratio affects system gain * How noise on a local oscillator will affec...

  12. Transition of RF internal antenna plasma by gas control

    Energy Technology Data Exchange (ETDEWEB)

    Hamajima, Takafumi; Yamauchi, Toshihiko; Kobayashi, Seiji; Hiruta, Toshihito; Kanno, Yoshinori [Advanced Institute of Industrial Technology, 1-10-40 HigashiOhi, Shinagawa-ku, Tokyo, 140-0011 (Japan); Japan Atomic Energy Agency, 2-4 Tokai-mura, Naka-gun, Ibaraki-ken, 319-1195 (Japan)

    2012-07-11

    The transition between the capacitively coupled plasma (CCP) and the inductively coupled plasma (ICP) was investigated with the internal radio frequency (RF) multi-turn antenna. The transition between them showed the hysteresis curve. The radiation power and the period of the self-pulse mode became small in proportion to the gas pressure. It was found that the ICP transition occurred by decreasing the gas pressure from 400 Pa.

  13. Capacitive micromachined ultrasonic transducers for medical imaging and therapy.

    Science.gov (United States)

    Khuri-Yakub, Butrus T; Oralkan, Omer

    2011-05-01

    Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications.

  14. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    International Nuclear Information System (INIS)

    Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

    2011-01-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  15. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  16. Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single-layer MEMS fractal capacitors. Explicitly, a capacitor with a woven structure and another with an interleaved configuration were fabricated in the standard PolyMUMPS surface micromachining process and tested at S-band frequencies. The self-resonant frequencies of the fabricated capacitors were close to 10GHz, which is better than that of the parallel-plate capacitor, which measured only 5.5GHz. Further, the presented capacitors provided a higher capacitance when compared with the state-of-the-art-reported MEMS fractal capacitors created using a single layer at the expense of a lower quality factor. © 2012 The Institution of Engineering and Technology.

  17. Effects of electron inertia in capacitively coupled radio frequency discharges

    International Nuclear Information System (INIS)

    Xiang Nong

    2004-01-01

    The effects of the electron inertia on the plasma and sheath dynamics in capacitively coupled rf discharges with frequency ωω pi are investigated (here, ω and ω pi are the rf frequency and bulk ion plasma frequency, respectively). It is found that the effects of the electron inertia on the plasma density and ion velocity in the quasi-neutral region depend on the ratio of the amplitudes of the discharge current I rf and ion current I B =en 0 C s (here, e is the unit charge, n 0 is the plasma density at center, and C s is the ion sound speed). If the ratio is small so that I rf /I B √(m i /m e ) (here, m i and m e are ion and electron masses, respectively), the ion and time-averaged electron densities, ion velocity, and electric fields are little affected by the electron inertia. Otherwise, the effects of the electron inertia are significant. It is also shown that the assumption that the electrons obey the Boltzmann distribution in the sheath is invalid when the electron flux flowing to the electrode is significant

  18. Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

    Science.gov (United States)

    Smith, H. B.; Charles, C.; Boswell, R. W.

    1998-10-01

    Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

  19. Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

    Science.gov (United States)

    Scardelletti, Maximilian C.; Zorman, Christian A.

    2016-01-01

    This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

  20. Thermoelectrical Generator for a MEMS-Fuze

    Directory of Open Access Journals (Sweden)

    A. K. Efremov

    2015-01-01

    Full Text Available The structure of modern fuzes includes micro-electromechanical systems (MEMS, which have such advanced devices as micro-accelerometers and micro-switches, being triggered at a specified level of setback. Independent power source (PS, as an inherent part of the MEMSfuze, charges an energy storage unit during the shot and triggers the fuze firing circuit when the shell encounters the target. Operating level of the control signal should be achieved within the time of remote arming, determined by the type of ammunition. The paper considers a possibility to develop PS as a thermoelectric generator (TEG with aerodynamic heating of hot junctions due to friction of the projectile body on the incoming airflow. The initial temperature is determined by the driving band cutting into the rifling and friction during the movement of projectile through the tube bore. The paper presents a technique for calculating the temperature field along the body of the projectile from the critical point, located at the top of the shell head. The solution of the equation of heat balance reveals the temporal development of the projectile body temperature. The proposed mathematical model of the TEG describes the process of converting heat into electrical output signal (thermo-EMF. An example of calculation for a specific artillery system – 57-mm anti-aircraft gun S-60 is given. Calculation of the TEG output signal was limited by the time, which is necessary to reach the top of the projectile trajectory. It is shown that at high altitude the temperature difference may drop to zero, thus cutting off the TEG output signal. Selection of capacitive storage parameters can be based on the reliability test conditions of the fuze firing circuit actuators, taking into account the partial storage discharge on the trajectory before the projectile encounters the target.

  1. Microfluidic stretchable RF electronics.

    Science.gov (United States)

    Cheng, Shi; Wu, Zhigang

    2010-12-07

    Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

  2. Amorphous Diamond MEMS and Sensors

    Energy Technology Data Exchange (ETDEWEB)

    SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

    2002-06-01

    This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater

  3. Versatile rf controller

    International Nuclear Information System (INIS)

    Howard, D.

    1985-05-01

    The low level rf system developed for the new Bevatron local injector provides precise control and regulation of the rf phase and amplitude for three 200 MHz linac cavities. The main features of the system are: extensive use of inexpensive, off-the-shelf components, ease of maintenance, and adaptability to a wide range of operation frequencies. The system utilizes separate function, easily removed rf printed circuit cards interconnected via the edge connectors. Control and monitoring are available both locally and through the computer. This paper will describe these features as well as the few component changes that would be required to adapt the techniques to other operating frequencies. 2 refs

  4. Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

    Science.gov (United States)

    Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

    2005-01-01

    Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

  5. A Widely-Accessible Distributed MEMS Processing Environment. The MEMS Exchange Program

    Science.gov (United States)

    2012-10-29

    all of these patterns in advance, we made a new cost model, called the Python Code cost model, which utilizes the power of a high level programming ...document entitled “The Beginners Guide to MEMS Processing” on the MEMSNet and MEMS Exchange The MEMS Exchange Program Final Technical Report October 29...from the Government is absolutely necessary. As said The MEMS Exchange Program Final Technical Report October 29, 2012 Page 57 of 58 before

  6. Miniaturized GPS/MEMS IMU integrated board

    Science.gov (United States)

    Lin, Ching-Fang (Inventor)

    2012-01-01

    This invention documents the efforts on the research and development of a miniaturized GPS/MEMS IMU integrated navigation system. A miniaturized GPS/MEMS IMU integrated navigation system is presented; Laser Dynamic Range Imager (LDRI) based alignment algorithm for space applications is discussed. Two navigation cameras are also included to measure the range and range rate which can be integrated into the GPS/MEMS IMU system to enhance the navigation solution.

  7. Wafer level packaging of MEMS

    International Nuclear Information System (INIS)

    Esashi, Masayoshi

    2008-01-01

    Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review. (topical review)

  8. Rheumatoid factor (RF)

    Science.gov (United States)

    ... page: //medlineplus.gov/ency/article/003548.htm Rheumatoid factor (RF) To use the sharing features on this ... M. is also a founding member of Hi-Ethics and subscribes to the principles of the Health ...

  9. RF radiation safety handbook

    International Nuclear Information System (INIS)

    Kitchen, Ronald.

    1993-01-01

    Radio frequency radiation can be dangerous in a number of ways. Hazards include electromagnetic compatibility and interference, electro-explosive vapours and devices, and direct effects on the human body. This book is a general introduction to the sources and nature of RF radiation. It describes the ways in which our current knowledge, based on relevant safety standards, can be used to safeguard people from any harmful effects of RF radiation. The book is designed for people responsible for, or concerned with, safety. This target audience will primarily be radio engineers, but includes those skilled in other disciplines including medicine, chemistry or mechanical engineering. The book covers the problems of RF safety management, including the use of measuring instruments and methods, and a review of current safety standards. The implications for RF design engineers are also examined. (Author)

  10. MEMS Bragg grating force sensor

    DEFF Research Database (Denmark)

    Reck, Kasper; Thomsen, Erik Vilain; Hansen, Ole

    2011-01-01

    We present modeling, design, fabrication and characterization of a new type of all-optical frequency modulated MEMS force sensor based on a mechanically amplified double clamped waveguide beam structure with integrated Bragg grating. The sensor is ideally suited for force measurements in harsh...... environments and for remote and distributed sensing and has a measured sensitivity of -14 nm/N, which is several times higher than what is obtained in conventional fiber Bragg grating force sensors. © 2011 Optical Society of America....

  11. MEMS Stirling Cooler Development Update

    Science.gov (United States)

    Moran, Matthew E.; Wesolek, Danielle

    2003-01-01

    This presentation provides an update on the effort to build and test a prototype unit of the patented MEMS Stirling cooler concept. A micro-scale regenerator has been fabricated by Polar Thermal Technologies and is currently being integrated into a Stirling cycle simulator at Johns Hopkins University Applied Physics Laboratory. A discussion of the analysis, design, assembly, and test plans for the prototype will be presented.

  12. Surface chemistry and tribology of MEMS.

    Science.gov (United States)

    Maboudian, Roya; Carraro, Carlo

    2004-01-01

    The microscopic length scale and high surface-to-volume ratio, characteristic of microelectro-mechanical systems (MEMS), dictate that surface properties are of paramount importance. This review deals with the effects of surface chemical treatments on tribological properties (adhesion, friction, and wear) of MEMS devices. After a brief review of materials and processes that are utilized in MEMS technology, the relevant tribological and chemical issues are discussed. Various MEMS microinstruments are discussed, which are commonly employed to perform adhesion, friction, and wear measurements. The effects of different surface treatments on the reported tribological properties are discussed.

  13. Piezoelectric MEMS sensors: state-of-the-art and perspectives

    International Nuclear Information System (INIS)

    Tadigadapa, S; Mateti, K

    2009-01-01

    Over the past two decades, several advances have been made in micromachined sensors and actuators. As the field of microelectromechanical systems (MEMS) has advanced, a clear need for the integration of materials other than silicon and its compounds into micromachined transducers has emerged. Piezoelectric materials are high energy density materials that scale very favorably upon miniaturization and that has led to an ever-growing interest in piezoelectric films for MEMS applications. At this time, piezoelectric aluminum-nitride-based film bulk acoustic resonators (FBAR) have already been successfully commercialized. Future innovations and improvements in inertial sensors for navigation, high-frequency crystal oscillators and filters for wireless applications, microactuators for RF applications, chip-scale chemical analysis systems and countless other applications hinge upon the successful miniaturization of components and integration of piezoelectrics and metals into these systems. In this article, a comprehensive review of micromachined piezoelectric transducer technology will be presented. Piezoelectric materials in bulk and thin film forms will be reviewed and fabrication techniques for the integration of these materials for microsensor applications will be presented. Recent advances in various piezoelectric microsensors will be presented through specific examples. This review will conclude with a critical assessment of the future trends and promise of this technology. (topical review)

  14. Microbunching and RF Compression

    International Nuclear Information System (INIS)

    Venturini, M.; Migliorati, M.; Ronsivalle, C.; Ferrario, M.; Vaccarezza, C.

    2010-01-01

    Velocity bunching (or RF compression) represents a promising technique complementary to magnetic compression to achieve the high peak current required in the linac drivers for FELs. Here we report on recent progress aimed at characterizing the RF compression from the point of view of the microbunching instability. We emphasize the development of a linear theory for the gain function of the instability and its validation against macroparticle simulations that represents a useful tool in the evaluation of the compression schemes for FEL sources.

  15. Rf power sources

    International Nuclear Information System (INIS)

    Allen, M.A.

    1988-05-01

    This paper covers RF power sources for accelerator applications. The approach has been with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. This paper is confined to electron-positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. 11 refs., 13 figs

  16. Fundamental investigations of capacitive radio frequency plasmas: simulations and experiments

    International Nuclear Information System (INIS)

    Donkó, Z; Derzsi, A; Hartmann, P; Korolov, I; Schulze, J; Czarnetzki, U; Schüngel, E

    2012-01-01

    Capacitive radio frequency (RF) discharge plasmas have been serving hi-tech industry (e.g. chip and solar cell manufacturing, realization of biocompatible surfaces) for several years. Nonetheless, their complex modes of operation are not fully understood and represent topics of high interest. The understanding of these phenomena is aided by modern diagnostic techniques and computer simulations. From the industrial point of view the control of ion properties is of particular interest; possibilities of independent control of the ion flux and the ion energy have been utilized via excitation of the discharges with multiple frequencies. ‘Classical’ dual-frequency (DF) discharges (where two significantly different driving frequencies are used), as well as discharges driven by a base frequency and its higher harmonic(s) have been analyzed thoroughly. It has been recognized that the second solution results in an electrically induced asymmetry (electrical asymmetry effect), which provides the basis for the control of the mean ion energy. This paper reviews recent advances on studies of the different electron heating mechanisms, on the possibilities of the separate control of ion energy and ion flux in DF discharges, on the effects of secondary electrons, as well as on the non-linear behavior (self-generated resonant current oscillations) of capacitive RF plasmas. The work is based on a synergistic approach of theoretical modeling, experiments and kinetic simulations based on the particle-in-cell approach. (paper)

  17. RF Measurement Concepts

    CERN Document Server

    Caspers, F

    2014-01-01

    For the characterization of components, systems and signals in the radiofrequency (RF) and microwave ranges, several dedicated instruments are in use. In this article the fundamentals of the RF signal techniques are discussed. The key element in these front ends is the Schottky diode which can be used either as a RF mixer or as a single sampler. The spectrum analyser has become an absolutely indispensable tool for RF signal analysis. Here the front end is the RF mixer as the RF section of modern spectrum analyses has a ra ther complex architecture. The reasons for this complexity and certain working principles as well as limitations are discussed. In addition, an overview of the development of scalar and vector signal analysers is given. For the determination of the noise temperature of a one-port and the noise figure of a two-port, basic concepts and relations are shown as well as a brief discussion of commonly used noise-measurement techniques. In a further part of this article the operating principles of n...

  18. Bioenergetics of mammalian sperm capacitation.

    Science.gov (United States)

    Ferramosca, Alessandra; Zara, Vincenzo

    2014-01-01

    After ejaculation, the mammalian male gamete must undergo the capacitation process, which is a prerequisite for egg fertilization. The bioenergetics of sperm capacitation is poorly understood despite its fundamental role in sustaining the biochemical and molecular events occurring during gamete activation. Glycolysis and mitochondrial oxidative phosphorylation (OXPHOS) are the two major metabolic pathways producing ATP which is the primary source of energy for spermatozoa. Since recent data suggest that spermatozoa have the ability to use different metabolic substrates, the main aim of this work is to present a broad overview of the current knowledge on the energy-producing metabolic pathways operating inside sperm mitochondria during capacitation in different mammalian species. Metabolism of glucose and of other energetic substrates, such as pyruvate, lactate, and citrate, is critically analyzed. Such knowledge, besides its obvious importance for basic science, could eventually translate into the development of novel strategies for treatment of male infertility, artificial reproduction, and sperm selection methods.

  19. Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

    Directory of Open Access Journals (Sweden)

    Abhijeet KSHIRSAGAR

    2010-04-01

    Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

  20. Challenges in the Packaging of MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Malshe, A.P.; Singh, S.B.; Eaton, W.P.; O' Neal, C.; Brown, W.D.; Miller, W.M.

    1999-03-26

    The packaging of Micro-Electro-Mechanical Systems (MEMS) is a field of great importance to anyone using or manufacturing sensors, consumer products, or military applications. Currently much work has been done in the design and fabrication of MEMS devices but insufficient research and few publications have been completed on the packaging of these devices. This is despite the fact that packaging is a very large percentage of the total cost of MEMS devices. The main difference between IC packaging and MEMS packaging is that MEMS packaging is almost always application specific and greatly affected by its environment and packaging techniques such as die handling, die attach processes, and lid sealing. Many of these aspects are directly related to the materials used in the packaging processes. MEMS devices that are functional in wafer form can be rendered inoperable after packaging. MEMS dies must be handled only from the chip sides so features on the top surface are not damaged. This eliminates most current die pick-and-place fixtures. Die attach materials are key to MEMS packaging. Using hard die attach solders can create high stresses in the MEMS devices, which can affect their operation greatly. Low-stress epoxies can be high-outgassing, which can also affect device performance. Also, a low modulus die attach can allow the die to move during ultrasonic wirebonding resulting to low wirebond strength. Another source of residual stress is the lid sealing process. Most MEMS based sensors and devices require a hermetically sealed package. This can be done by parallel seam welding the package lid, but at the cost of further induced stress on the die. Another issue of MEMS packaging is the media compatibility of the packaged device. MEMS unlike ICS often interface with their environment, which could be high pressure or corrosive. The main conclusion we can draw about MEMS packaging is that the package affects the performance and reliability of the MEMS devices. There is a

  1. A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

    Science.gov (United States)

    Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

    2013-12-01

    We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

  2. Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

    Directory of Open Access Journals (Sweden)

    Aiping Zeng

    2017-01-01

    Full Text Available The plasma treatment on commercial active carbon (AC was carried out in a capacitively coupled plasma system using Ar + 10% O2 at pressure of 4.0 Torr. The RF plasma power ranged from 50 W to 100 W and the processing time was 10 min. The carbon film electrode was fabricated by electrophoretic deposition. Micro-Raman spectroscopy revealed the highly increased disorder of sp2 C lattice for the AC treated at 75 W. An electrosorption capacity of 6.15 mg/g was recorded for the carbon treated at 75 W in a 0.1 mM NaCl solution when 1.5 V was applied for 5 hours, while the capacity of the untreated AC was 1.01 mg/g. The plasma treatment led to 5.09 times increase in the absorption capacity. The jump of electrosorption capacity by plasma treatment was consistent with the Raman spectra and electrochemical double layer capacitance. This work demonstrated that plasma treatment was a potentially efficient approach to activating biochar to serve as electrode material for capacitive deionization (CDI.

  3. Pulse mode actuation-readout system based on MEMS resonator for liquid sensing

    DEFF Research Database (Denmark)

    Tang, Meng; Cagliani, Alberto; Davis, Zachary James

    2014-01-01

    A MEMS (Micro-Electro-Mechanical Systems) bulk disk resonator is applied for mass sensing under its dynamic mode. The classical readout circuitry involves sophisticated feedback loop and feedthrough compensation. We propose a simple straightforward non-loop pulse mode actuation and capacitive...... readout scheme. In order to verify its feasibility in liquid bio-chemical sensing environment, an experimental measurement is conducted with humidity sensing application. The measured resonant frequency changes 60kHz of 67.7MHz with a humidity change of 0~80%....

  4. Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

    DEFF Research Database (Denmark)

    Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

    2014-01-01

    This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

  5. LIF-measurements on a low prassure RF-driven InBr lamp

    NARCIS (Netherlands)

    Mulders, H.C.J.; Stoffels, W.W.

    2007-01-01

    A laser induced fluorescence (LIF) experiment has been carried out on a low pressure, capacitively coupled RF driven. Ar discharge with InBr as an additive. The intention is to find the density of the different states of InBr and the metastable states in particular. We measured the density profile

  6. A Teaching - Learning Framework for MEMS Education

    International Nuclear Information System (INIS)

    Sheeparamatti, B G; Angadi, S A; Sheeparamatti, R B; Kadadevaramath, J S

    2006-01-01

    Micro-Electro-Mechanical Systems (MEMS) technology has been identified as one of the most promising technologies in the 21st century. MEMS technology has opened up a wide array of unforeseen applications. Hence it is necessary to train the technocrats of tomorrow in this emerging field to meet the industrial/societal demands. The drive behind fostering of MEMS technology is the reduction in the cost, size, weight, and power consumption of the sensors, actuators, and associated electronics. MEMS is a multidisciplinary engineering and basic science area which includes electrical engineering, mechanical engineering, material science and biomedical engineering. Hence MEMS education needs a special approach to prepare the technocrats for a career in MEMS. The modern education methodology using computer based training systems (CBTS) with embedded modeling and simulation tools will help in this direction. The availability of computer based learning resources such as MATLAB, ANSYS/Multiphysics and rapid prototyping tools have contributed to proposition of an efficient teaching-learning framework for MEMS education presented in this paper. This paper proposes a conceptual framework for teaching/learning MEMS in the current technical education scenario

  7. Wavelength tunable MEMS VCSELs for OCT imaging

    DEFF Research Database (Denmark)

    Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

    2018-01-01

    MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

  8. Evolution of a MEMS Photoacoustic Chemical Sensor

    National Research Council Canada - National Science Library

    Pellegrino, Paul M; Polcawich, Ronald G

    2003-01-01

    .... Initial MEMS work is centered on fabrication of a lead zirconate titanate (PZT) microphone subsystem to be incorporated in the full photoacoustic device. Preliminary results were very positive for the macro-photoacoustic cell, PZT membrane microphones design / fabrication and elementary monolithic MEMS photoacoustic cavity.

  9. MEMS-Based Waste Vibrational Energy Harvesters

    Science.gov (United States)

    2013-06-01

    MEMS energy- harvesting device. Although PZT is used more prevalently due to its higher piezoelectric coefficient and dielectric constant, AlN has...7 1. Lead Zirconium Titanate ( PZT ) .........................................................7 2. Aluminum...Laboratory PiezoMUMPS Piezoelectric Multi-User MEMS Processes PZT Lead Zirconate Titanate SEM Scanning Electron Microscopy SiO2 Silicon

  10. The Micronium-A Musical MEMS instrument

    NARCIS (Netherlands)

    Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, Hylco; Beekman, Jethro G.; Fortgens, Laurens C.; de Graaf, Derk B.; Vocke, Sander; Abelmann, Leon

    The Micronium is a musical instrument fabricated from silicon using microelectromechanical system (MEMS) technology. It is—to the best of our knowledge—the first musical micro-instrument fabricated using MEMS technology, where the actual sound is generated by mechanical microstructures. The

  11. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  12. Miniaturization of components and systems for space using MEMS-technology

    Science.gov (United States)

    Grönland, Tor-Arne; Rangsten, Pelle; Nese, Martin; Lang, Martin

    2007-06-01

    Development of MEMS-based (micro electro mechanical system) components and subsystems for space applications has been pursued by various research groups and organizations around the world for at least two decades. The main driver for developing MEMS-based components for space is the miniaturization that can be achieved. Miniaturization can not only save orders of magnitude in mass and volume of individual components, but it can also allow increased redundancy, and enable novel spacecraft designs and mission scenarios. However, the commercial breakthrough of MEMS has not occurred within the space business as it has within other branches such as the IT/telecom or automotive industries, or as it has in biotech or life science applications. A main explanation to this is the highly conservative attitude to new technology within the space community. This conservatism is in many senses motivated by a very low risk acceptance in the few and costly space projects that actually ends with a space flight. To overcome this threshold there is a strong need for flight opportunities where reasonable risks can be accepted. Currently there are a few flight opportunities allowing extensive use of new technology in space, but one of the exceptions is the PRISMA program. PRISMA is an international (Sweden, Germany, France, Denmark, Norway, Greece) technology demonstration program with focus on rendezvous and formation flying. It is a two satellite LEO mission with a launch scheduled for the first half of 2009. On PRISMA, a number of novel technologies e.g. RF metrology sensor for Darwin, autonomous formation flying based on GPS and vision-based sensors, ADN-based "green propulsion" will be demonstrated in space for the first time. One of the satellites will also have a miniaturized propulsion system onboard based on MEMS-technology. This novel propulsion system includes two microthruster modules, each including four thrusters with micro- to milli-Newton thrust capability. The novelty

  13. Paschen like behavior in argon RF discharge

    International Nuclear Information System (INIS)

    Al-Jwaady, Y. I.

    2011-01-01

    A 13.56 MHz radio frequency inductively coupled discharge system is used in this work to study the relation between Argon gas pressure in the discharge chamber and the threshold breakdown RF power needed to create the discharge. Experimental results indicated that although the data involve some features related to the traditional Paschen relation used in Dc discharge, this relation cannot provide a quantitative description of experimental data. For such reason, a modified from Paschen relation is suggested. The modified relation provides good agreement with experimental data. Furthermore, it seems that the Paschen relation will have significant reflections on the behavior of the transit process from capacitive to inductive discharge. This is demonstrated by studying the transit region. (author)

  14. Effect of power modulation on properties of pulsed capacitively coupled radiofrequency discharges

    International Nuclear Information System (INIS)

    Samara, V; Bowden, M D; Braithwaite, N St J

    2010-01-01

    We describe measurements of plasma properties of pulsed, low pressure, capacitively coupled discharges operated in argon. The study aims to determine the effect of modulating the radiofrequency power during the discharge part of the pulse cycle. Measurements of local electron density and optical emission were made in capacitively coupled rf discharges generated in a Gaseous Electronics Conference (GEC) reference reactor. Gas pressure was in the range 7-70 Pa, rf power in the range 1-100 W and pulse durations in the range 10 μs-100 ms. The results indicate that the ignition and afterglow decay processes in pulsed discharges can be controlled by modulating the shape of applied radiofrequency pulse.

  15. Effect of antenna capacitance on the plasma characteristics of an internal linear inductively coupled plasma system

    International Nuclear Information System (INIS)

    Lim, Jong Hyeuk; Kim, Kyong Nam; Park, Jung Kyun; Yeom, Geun Young

    2008-01-01

    This study examined the effect of the antenna capacitance of an inductively coupled plasma (ICP) source, which was varied using an internal linear antenna, on the electrical and plasma characteristics of the ICP source. The inductive coupling at a given rf current increased with decreasing antenna capacitance. This was caused by a decrease in the inner copper diameter of the antenna made from coaxial copper/quartz tubing, which resulted in a higher plasma density and lower plasma potential. By decreasing the diameter of the copper tube from 25 to 10 mm, the plasma density of a plasma source size of 2750x2350 mm 2 was increased from approximately 8x10 10 /cm 3 to 1.5x10 11 /cm 3 at 15 mTorr Ar and 9 kW of rf power

  16. Ion flux nonuniformities in large-area high-frequency capacitive discharges

    International Nuclear Information System (INIS)

    Perret, A.; Chabert, P.; Booth, J.-P.; Jolly, J.; Guillon, J.; Auvray, Ph.

    2003-01-01

    Strong nonuniformities of plasma production are expected in capacitive discharges if the excitation wavelength becomes comparable to the reactor size (standing-wave effect) and/or if the plasma skin depth becomes comparable to the plate separation (skin effect) [M. A. Lieberman et al., Plasma Sources Sci. Technol. 11, 283 (2002)]. Ion flux uniformity measurements were carried out in a large-area square (40 cmx40 cm) capacitive discharge driven at frequencies between 13.56 MHz and 81.36 MHz in argon gas at 150 mTorr. At 13.56 MHz, the ion flux was uniform to ±5%. At 60 MHz (and above) and at low rf power, the standing-wave effect was seen (maximum of the ion flux at the center), in good quantitative agreement with theory. At higher rf power, maxima of the ion flux were observed at the edges, due either to the skin effect or to other edge effects

  17. Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

    KAUST Repository

    Chandran, Akhil A.; Younis, Mohammad I.

    2016-01-01

    Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator's nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli's beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

  18. Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

    KAUST Repository

    Chandran, Akhil A.

    2016-09-15

    Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator\\'s nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli\\'s beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

  19. 7.9 pJ/Step Energy-Efficient Multi-Slope 13-bit Capacitance-to-Digital Converter

    KAUST Repository

    Omran, Hesham

    2014-08-01

    In this brief, an energy-efficient capacitance-to-digital converter (CDC) is presented. The proposed CDC uses digitally controlled coarse-fine multi-slope integration to digitize a wide range of capacitance in short conversion time. Both integration current and frequency are scaled, which leads to significant improvement in the energy efficiency of both analog and digital circuitry. Mathematical analysis for circuit nonidealities, noise, and improvement in energy efficiency is provided. A prototype fabricated in a 0.35-μm CMOS process occupies 0.09 mm2 and consumes a total of 153 μA from 3.3 V supply while achieving 13-bit resolution. The operation of the prototype is experimentally verified using MEMS capacitive pressure sensor. Compared to recently published work, the prototype achieves an excellent energy efficiency of 7.9 pJ/Step. © 2004-2012 IEEE.

  20. 7.9 pJ/Step Energy-Efficient Multi-Slope 13-bit Capacitance-to-Digital Converter

    KAUST Repository

    Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

    2014-01-01

    In this brief, an energy-efficient capacitance-to-digital converter (CDC) is presented. The proposed CDC uses digitally controlled coarse-fine multi-slope integration to digitize a wide range of capacitance in short conversion time. Both integration current and frequency are scaled, which leads to significant improvement in the energy efficiency of both analog and digital circuitry. Mathematical analysis for circuit nonidealities, noise, and improvement in energy efficiency is provided. A prototype fabricated in a 0.35-μm CMOS process occupies 0.09 mm2 and consumes a total of 153 μA from 3.3 V supply while achieving 13-bit resolution. The operation of the prototype is experimentally verified using MEMS capacitive pressure sensor. Compared to recently published work, the prototype achieves an excellent energy efficiency of 7.9 pJ/Step. © 2004-2012 IEEE.

  1. About the EDF formation in a capacitively coupled argon plasma

    International Nuclear Information System (INIS)

    Tatanova, M; Thieme, G; Basner, R; Hannemann, M; Golubovskii, Yu B; Kersten, H

    2006-01-01

    The formation of the electron distribution function (EDF) in the bulk plasma of a capacitively coupled radio-frequency (rf) discharge in argon generated in the plasma-chemical reactor PULVA-INP is investigated experimentally and theoretically. Measurements of the EDF and internal plasma parameters were performed by means of a Langmuir probe at pressures of 0.5-100 Pa and discharge powers of 5-100 W. The observed EDFs have revealed a two-temperature behaviour at low pressures and evolved into a Maxwellian distribution at high gas pressures and large discharge powers. Theoretical determination of the EDF is based on the numerical solution of the Boltzmann kinetic equation in the local and non-local approaches under experimental conditions. The model includes elastic and inelastic electron-atom collisions and electron-electron interactions. Low electron temperatures and relatively high ionization degrees are the features of the PULVA-INP rf discharge. This leads to significant influence of the electron-electron collisions on the EDF formation. The modelled and measured distributions show good agreement in a wide range of discharge parameters, except for a range of low gas pressures, where the stochastic electron heating is intense. Additionally, mechanisms of the EDF formation in the dc and rf discharge were compared under similar discharge conditions

  2. About the EDF formation in a capacitively coupled argon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Tatanova, M [Institute of Physics, Saint-Petersburg State University, ul. Ulianovskaja 1, 198504 Saint-Petersburg (Russian Federation); Thieme, G [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Basner, R [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Hannemann, M [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Golubovskii, Yu B [Institute of Physics, Saint-Petersburg State University, ul. Ulianovskaja 1, 198504 Saint-Petersburg (Russian Federation); Kersten, H [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany)

    2006-08-01

    The formation of the electron distribution function (EDF) in the bulk plasma of a capacitively coupled radio-frequency (rf) discharge in argon generated in the plasma-chemical reactor PULVA-INP is investigated experimentally and theoretically. Measurements of the EDF and internal plasma parameters were performed by means of a Langmuir probe at pressures of 0.5-100 Pa and discharge powers of 5-100 W. The observed EDFs have revealed a two-temperature behaviour at low pressures and evolved into a Maxwellian distribution at high gas pressures and large discharge powers. Theoretical determination of the EDF is based on the numerical solution of the Boltzmann kinetic equation in the local and non-local approaches under experimental conditions. The model includes elastic and inelastic electron-atom collisions and electron-electron interactions. Low electron temperatures and relatively high ionization degrees are the features of the PULVA-INP rf discharge. This leads to significant influence of the electron-electron collisions on the EDF formation. The modelled and measured distributions show good agreement in a wide range of discharge parameters, except for a range of low gas pressures, where the stochastic electron heating is intense. Additionally, mechanisms of the EDF formation in the dc and rf discharge were compared under similar discharge conditions.

  3. Optical MEMS for Earth observation

    Science.gov (United States)

    Liotard, Arnaud; Viard, Thierry; Noell, Wilfried; Zamkotsian, Frédéric; Freire, Marco; Guldimann, Benedikt; Kraft, Stefan

    2017-11-01

    Due to the relatively large number of optical Earth Observation missions at ESA, this area is interesting for new space technology developments. In addition to their compactness, scalability and specific task customization, optical MEMS could generate new functions not available with current technologies and are thus candidates for the design of future space instruments. Most mature components for space applications are the digital mirror arrays, the micro-deformable mirrors, the programmable micro diffraction gratings and tiltable micromirrors. A first selection of market-pull and techno-push concepts is done. In addition, some concepts are coming from outside Earth Observation. Finally two concepts are more deeply analyzed. The first concept is a programmable slit for straylight control for space spectro-imagers. This instrument is a push-broom spectroimager for which some images cannot be exploited because of bright sources in the field-of-view. The proposed concept consists in replacing the current entrance spectrometer slit by an active row of micro-mirrors. The MEMS will permit to dynamically remove the bright sources and then to obtain a field-of-view with an optically enhanced signal-to-noise ratio. The second concept is a push-broom imager for which the acquired spectrum can be tuned by optical MEMS. This system is composed of two diffractive elements and a digital mirror array. The first diffractive element spreads the spectrum. A micromirror array is set at the location of the spectral focal plane. By putting the micro-mirrors ON or OFF, we can select parts of field-of-view or spectrum. The second diffractive element then recombines the light on a push-broom detector. Dichroics filters, strip filter, band-pass filter could be replaced by a unique instrument.

  4. The FELIX RF system

    International Nuclear Information System (INIS)

    Manintveld, P.; Delmee, P.F.M.; Geer, C.A.J. van der; Meddens, B.J.H.; Meer, A.F.G. van der; Amersfoort, P.W. van

    1992-01-01

    The performance of the RF system for the Free Electron Laser for Infrared eXperiments (FELIX) is discussed. The RF system provides the input power for a triode gun (1 GHz, 100 W), a prebuncher (1 GHz, 10 kW), a buncher (3 GHz, 20 MW), and two linacs (3 GHz, 8 MW each). The pulse length in the system is 20 μs. The required electron beam stability imposes the following demands on the RF system: a phase stability better than 0.3 deg for the 1 GHz signals and better than 1 deg for the 3 GHz signals; the amplitude stability has to be better than 1% for the 1 GHz and better than 0.2% for the 3 GHz signals. (author) 3 refs.; 6 figs

  5. RF and feedback systems

    International Nuclear Information System (INIS)

    Boussard, D.

    1994-01-01

    The radiofrequency system of the Tau Charm Factory accelerating 10 11 particles per bunch and a circulating current of 0.5 A is presented. In order to produce the very short bunches required, the RF system of TCF must provide a large RF voltage (8 MV) at a frequency in the neighbourhood of 400-500 MHz. It appears very attractive to produce the high voltage required with superconducting cavities, for which wall losses are negligible. A comparison between the sc RF system proposed and a possible copper system run at an average 1 MV/m, shows the clear advantage of sc cavities for TCF. (R.P.). 2 figs,. 1 tab

  6. MEMS sensors and wireless telemetry for distributed systems

    Energy Technology Data Exchange (ETDEWEB)

    Britton, C.L. Jr.; Warmack, R.J.; Smith, S.F. [and others

    1998-02-01

    Selectively coated cantilevers are being developed at ORNL for chemical and biological sensing. The sensitivity can exceed that of other electro-mechanical devices as parts-per-trillion detection can be demonstrated for certain species. The authors are now proceeding to develop systems that employ electrically readable microcantilevers in a standard MEMS process and standard CMOS processes. One of their primary areas of interest is chemical sensing for environmental applications. Towards this end, they are presently developing electronic readout of a mercury-sensitive coated cantilever. In order to field arrays of distributed sensors, a wireless network for data reporting is needed. For this, the authors are developing on-chip spread-spectrum encoding and modulation circuitry to improve the robustness and security of sensor data in typical interference- and multipath-impaired environments. They have also provided for a selection of distinct spreading codes to serve groups of sensors in a common environment by the application of code-division multiple-access techniques. Most of the RF circuitry they have designed and fabricated in 0.5 {micro}m CMOS has been tested and verified operational to above 1 GHz. The initial intended operation is for use in the 915 MHz Industrial, Scientific, and Medical (ISM) band. This paper presents measured data on the microcantilever-based mercury detector. They also present design data and measurements of the RF telemetry chip.

  7. A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams.

    Science.gov (United States)

    Gao, Lili; Zhou, Zai-Fa; Huang, Qing-An

    2017-11-08

    A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

  8. A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams

    Directory of Open Access Journals (Sweden)

    Lili Gao

    2017-11-01

    Full Text Available A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC, is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

  9. MEMS fundamental technology and applications

    CERN Document Server

    Choudhary, Vikas

    2013-01-01

    "The book editors have managed to assemble a group of extraordinary authors to provide their expertise to this book. While giving an excellent overview of the history and the state of the art of MEMS technology, this book also focuses on current trends and topics such as gyroscopes that currently experience significant and increasing popularity in research and in industry. It is well written and the material is presented in a well-structured way making it easily accessible to any reader with a technical background."-Boris Stoeber, The University of British Columbia, Vancouver, Canada.

  10. Development of MEMS photoacoustic spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Robinson, Alex Lockwood; Eichenfield, Matthew S.; Griffin, Benjamin; Harvey, Heidi Alyssa; Nielson, Gregory N.; Okandan, Murat; Langlois, Eric; Resnick, Paul James; Shaw, Michael J.; Young, Ian; Givler, Richard C.; Reinke, Charles M.

    2014-01-01

    After years in the field, many materials suffer degradation, off-gassing, and chemical changes causing build-up of measurable chemical atmospheres. Stand-alone embedded chemical sensors are typically limited in specificity, require electrical lines, and/or calibration drift makes data reliability questionable. Along with size, these "Achilles' heels" have prevented incorporation of gas sensing into sealed, hazardous locations which would highly benefit from in-situ analysis. We report on development of an all-optical, mid-IR, fiber-optic based MEMS Photoacoustic Spectroscopy solution to address these limitations. Concurrent modeling and computational simulation are used to guide hardware design and implementation.

  11. ISR RF cavities

    CERN Multimedia

    1983-01-01

    In each ISR ring the radiofrequency cavities were installed in one 9 m long straight section. The RF system of the ISR had the main purpose to stack buckets of particles (most of the time protons)coming from the CPS and also to accelerate the stacked beam. The installed RF power per ring was 18 kW giving a peak accelerating voltage of 20 kV. The system had a very fine regulation feature allowing to lower the voltage down to 75 V in a smooth and well controlled fashion.

  12. Conventional RF system design

    International Nuclear Information System (INIS)

    Puglisi, M.

    1994-01-01

    The design of a conventional RF system is always complex and must fit the needs of the particular machine for which it is planned. It follows that many different design criteria should be considered and analyzed, thus exceeding the narrow limits of a lecture. For this reason only the fundamental components of an RF system, including the generators, are considered in this short seminar. The most common formulas are simply presented in the text, while their derivations are shown in the appendices to facilitate, if desired, a more advanced level of understanding. (orig.)

  13. RF tuning system for superconducting cyclotron at VECC

    International Nuclear Information System (INIS)

    Mandal, Aditya; Som, S.; Pal, Saikat; Seth, S.; Mukherjee, A.K.; Gangopadhyay, P.; Prasad, J.S.; Raj, P.R.; Manna, S.K.; Banerjee, M.; Krishnaiah, K.V.; Maskawade, S.; Saha, M.S.; Biswas, S.; Panda, Umashakar

    2009-01-01

    The RF system of Superconducting cyclotron at VECC has operational frequency 9-27 MHz. It has three numbers of tunable rf amplifier cavities as well as six numbers of tunable Main resonant cavities. RF tuning system takes care of movement of nine stepper motor based sliding short movement and hydraulic driven three coupling capacitors and three trimmer capacitors. The PC-based stepper motor controlled sliding short movement system has positional accuracy of around 20 micron and PC-based hydraulically driven couplers and trimmers system has 10 micron positional accuracy. The RF power is capacitively coupled to the dee (accelerating electrode) of the main resonant cavity through Coupler (Coupling capacitor). The coupling capacitor is used to match the impedance of the main resonant cavity to the 50 Ohm output impedance of final RF power amplifier. Trimmer capacitor operates in closed loop for the adjustment of cavity phase variation arising due to temperature variation and beam loading of the cavity. Coupler can travel 100 mm. and trimmer has 20 mm. travels. A PLC based PID control system has been developed for positional control of the coupler and trimmer. One position control mode of trimmer is same as coupling capacitor and another is velocity control mode. Velocity control mode operates in close-loop. The positional data of different frequencies of nine stepper motors and three coupling capacitors are stored in a database. (author)

  14. Micro electromechanical systems (MEMS) for mechanical engineers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, A. P., LLNL

    1996-11-18

    The ongoing advances in Microelectromechanical Systems (MEMS) are providing man-kind the freedom to travel to dimensional spaces never before conceivable. Advances include new fabrication processes, new materials, tailored modeling tools, new fabrication machines, systems integration, and more detailed studies of physics and surface chemistry as applied to the micro scale. In the ten years since its inauguration, MEMS technology is penetrating industries of automobile, healthcare, biotechnology, sports/entertainment, measurement systems, data storage, photonics/optics, computer, aerospace, precision instruments/robotics, and environment monitoring. It is projected that by the turn of the century, MEMS will impact every individual in the industrial world, totaling sales up to $14 billion (source: System Planning Corp.). MEMS programs in major universities have spawned up all over the United States, preparing the brain-power and expertise for the next wave of MEMS breakthroughs. It should be pointed out that although MEMS has been initiated by electrical engineering researchers through the involvement of IC fabrication techniques, today it has evolved such that it requires a totally multi-disciplinary team to develop useful devices. Mechanical engineers are especially crucial to the success of MEMS development, since 90% of the physical realm involved is mechanical. Mechanical engineers are needed for the design of MEMS, the analysis of the mechanical system, the design of testing apparatus, the implementation of analytical tools, and the packaging process. Every single aspect of mechanical engineering is being utilized in the MEMS field today, however, the impact could be more substantial if more mechanical engineers are involved in the systems level designing. In this paper, an attempt is made to create the pathways for a mechanical engineer to enter in the MEMS field. Examples of application in optics and medical devices will be used to illustrate how mechanical

  15. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

    Science.gov (United States)

    Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

    2018-05-01

    This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

  16. The TESLA RF System

    International Nuclear Information System (INIS)

    Choroba, S.

    2003-01-01

    The TESLA project proposed by the TESLA collaboration in 2001 is a 500 to 800GeV e+/e- linear collider with integrated free electron laser facility. The accelerator is based on superconducting cavity technology. Approximately 20000 superconducting cavities operated at 1.3GHz with a gradient of 23.4MV/m or 35MV/m will be required to achieve the energy of 500GeV or 800GeV respectively. For 500GeV ∼600 RF stations each generating 10MW of RF power at 1.3GHz at a pulse duration of 1.37ms and a repetition rate of 5 or 10Hz are required. The original TESLA design was modified in 2002 and now includes a dedicated 20GeV electron accelerator in a separate tunnel for free electron laser application. The TESLA XFEL will provide XFEL radiation of unprecedented peak brilliance and full transverse coherence in the wavelength range of 0.1 to 6.4nm at a pulse duration of 100fs. The technology of both accelerators, the TESLA linear collider and the XFEL, will be identical, however the number of superconducting cavities and RF stations for the XFEL will be reduced to 936 and 26 respectively. This paper describes the layout of the entire RF system of the TESLA linear collider and the TESLA XFEL and gives an overview of its various subsystems and components

  17. Remote RF Battery Charging

    NARCIS (Netherlands)

    Visser, H.J.; Pop, V.; Op het Veld, J.H.G.; Vullers, R.J.M.

    2011-01-01

    The design of a remote RF battery charger is discussed through the analysis and design of the subsystems of a rectenna (rectifying antenna): antenna, rectifying circuit and loaded DC-to-DC voltage (buck-boost) converter. Optimum system power generation performance is obtained by adopting a system

  18. Beyond the RF photogun

    NARCIS (Netherlands)

    Luiten, O.J.; Rozenzweig, J.; Travish, G.

    2003-01-01

    Laser-triggered switching of MV DC voltages enables acceleration gradients an order of magnitude higher than in state-of-the-art RF photoguns. In this way ultra-short, high-brightness electron bunches may be generated without the use of magnetic compression. The evolution of the bunch during the

  19. AC/RF Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, G [Jefferson Lab (United States)

    2014-07-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  20. AC/RF Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [JLAB

    2015-02-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  1. Optical inspection of hidden MEMS structures

    Science.gov (United States)

    Krauter, Johann; Gronle, Marc; Osten, Wolfgang

    2017-06-01

    Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

  2. Design of Surface micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMS, most have used comb-drive actuation methods and bulk micromachining processes. This research focuses on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  3. Design of Surface Micromachined Compliant MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

    2002-12-31

    The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMs, most have used comb-drive actuation methods and bulk micromachining processes. This research focused on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

  4. A Flexible Capacitive Sensor with Encapsulated Liquids as Dielectrics

    Directory of Open Access Journals (Sweden)

    Yasunari Hotta

    2012-03-01

    Full Text Available Flexible and high-sensitive capacitive sensors are demanded to detect pressure distribution and/or tactile information on a curved surface, hence, wide varieties of polymer-based flexible MEMS sensors have been developed. High-sensitivity may be achieved by increasing the capacitance of the sensor using solid dielectric material while it deteriorates the flexibility. Using air as the dielectric, to maintain the flexibility, sacrifices the sensor sensitivity. In this paper, we demonstrate flexible and highly sensitive capacitive sensor arrays that encapsulate highly dielectric liquids as the dielectric. Deionized water and glycerin, which have relative dielectric constants of approximately 80 and 47, respectively, could increase the capacitance of the sensor when used as the dielectric while maintaining flexibility of the sensor with electrodes patterned on flexible polymer substrates. A reservoir of liquids between the electrodes was designed to have a leak path, which allows the sensor to deform despite of the incompressibility of the encapsulated liquids. The proposed sensor was microfabricated and demonstrated successfully to have a five times greater sensitivity than sensors that use air as the dielectric.

  5. Triboelectricity in capacitive biopotential measurements.

    Science.gov (United States)

    Wartzek, Tobias; Lammersen, Thomas; Eilebrecht, Benjamin; Walter, Marian; Leonhardt, Steffen

    2011-05-01

    Capacitive biopotential measurements suffer from strong motion artifacts, which may result in long time periods during which a reliable measurement is not possible. This study examines contact electrification and triboelectricity as possible reasons for these artifacts and discusses local triboelectric effects on the electrode-body interface as well as global electrostatic effects as common-mode interferences. It will be shown that most probably the triboelectric effects on the electrode-body interface are the main reason for artifacts, and a reduction of artifacts can only be achieved with a proper design of the electrode-body interface. For a deeper understanding of the observed effects, a mathematical model for triboelectric effects in highly isolated capacitive biopotential measurements is presented and verified with experiments. Based on these analyses of the triboelectric effects on the electrode-body interface, different electrode designs are developed and analyzed in order to minimize artifacts due to triboelectricity on the electrode-body interface. © 2011 IEEE

  6. Design, simulation, fabrication, and characterization of MEMS vibration energy harvesters

    Science.gov (United States)

    Oxaal, John

    Energy harvesting from ambient sources has been a longtime goal for microsystem engineers. The energy available from ambient sources is substantial and could be used to power wireless micro devices, making them fully autonomous. Self-powered wireless sensors could have many applications in for autonomous monitoring of residential, commercial, industrial, geological, or biological environments. Ambient vibrations are of particular interest for energy harvesting as they are ubiquitous and have ample kinetic energy. In this work a MEMS device for vibration energy harvesting using a variable capacitor structure is presented. The nonlinear electromechanical dynamics of a gap-closing type structure is experimentally studied. Important experimental considerations such as the importance of reducing off-axis vibration during testing, characterization methods, dust contamination, and the effect of grounding on parasitic capacitance are discussed. A comprehensive physics based model is developed and validated with two different microfabricated devices. To achieve maximal power, devices with high aspect ratio electrodes and a novel two-level stopper system are designed and fabricated. The maximum achieved power from the MEMS device when driven by sinusoidal vibrations was 3.38 muW. Vibrations from HVAC air ducts, which have a primary frequency of 65 Hz and amplitude of 155 mgrms, are targeted as the vibration source and devices are designed for maximal power harvesting potential at those conditions. Harvesting from the air ducts, the devices reached 118 nW of power. When normalized to the operating conditions, the best figure of merit of the devices tested was an order of magnitude above state-of-the-art of the devices (1.24E-6).

  7. Adhesion aspects in MEMS/NEMS

    CERN Document Server

    Kim, Seong H; Mittal, Kash L

    2012-01-01

    Phenomena associated with the adhesion interaction of surfaces have been a critical aspect of micro- and nanosystem development and performance since the first MicroElectroMechanicalSystems(MEMS) were fabricated. These phenomena are ubiquitous in nature and are present in all systems, however MEMS devices are particularly sensitive to their effects owing to their small size and limited actuation force that can be generated. Extension of MEMS technology concepts to the nanoscale and development of NanoElectroMechanicalSystems(NEMS) will result in systems even more strongly influenced by surface

  8. Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

    Science.gov (United States)

    Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

    2017-12-01

    An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

  9. Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

    Directory of Open Access Journals (Sweden)

    J. Upadhyay

    2017-12-01

    Full Text Available An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

  10. A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

    Science.gov (United States)

    Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

    2017-11-01

    An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed.

  11. A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

    International Nuclear Information System (INIS)

    Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

    2017-01-01

    An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed. (paper)

  12. Barrier rf systems in synchrotrons

    International Nuclear Information System (INIS)

    Bhat, Chandra M.

    2004-01-01

    Recently, many interesting applications of the barrier RF system in hadron synchrotrons have been realized. A remarkable example of this is the development of longitudinal momentum mining and implementation at the Fermilab Recycler for extraction of low emittance pbars for the Tevatron shots. At Fermilab, we have barrier RF systems in four different rings. In the case of Recycler Ring, all of the rf manipulations are carried out using a barrier RF system. Here, the author reviews various uses of barrier rf systems in particle accelerators including some new schemes for producing intense proton beam and possible new applications

  13. MEMS Gyroscope with Interferometric Detection, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed innovation is a novel MEMS gyroscope that uses micro-interferometric detection to measure the motion of the proof mass. Using an interferometric...

  14. Wireless MEMs BioSensor, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Crossfield is proposing to develop a low cost, single chip plant bio-monitor using an embedded MEMs based infrared (IR) spectroscopy gas sensor for carbon dioxide...

  15. MEMS and Nano-Technology Clean Room

    Data.gov (United States)

    Federal Laboratory Consortium — The MEMS and Nano-Technology Clean Room is a state-of-the-art, 800 square foot, Class 1000-capable facility used for development of micro and sub-micro scale sensors...

  16. Advanced mechatronics and MEMS devices II

    CERN Document Server

    Wei, Bin

    2017-01-01

    This book introduces the state-of-the-art technologies in mechatronics, robotics, and MEMS devices in order to improve their methodologies. It provides a follow-up to "Advanced Mechatronics and MEMS Devices" (2013) with an exploration of the most up-to-date technologies and their applications, shown through examples that give readers insights and lessons learned from actual projects. Researchers on mechatronics, robotics, and MEMS as well as graduate students in mechanical engineering will find chapters on: Fundamental design and working principles on MEMS accelerometers Innovative mobile technologies Force/tactile sensors development Control schemes for reconfigurable robotic systems Inertial microfluidics Piezoelectric force sensors and dynamic calibration techniques ...And more. Authors explore applications in the areas of agriculture, biomedicine, advanced manufacturing, and space. Micro-assembly for current and future industries is also considered, as well as the design and development of micro and intel...

  17. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape

  18. Nonlinear Dynamics of Electrostatically Actuated MEMS Arches

    KAUST Repository

    Al Hennawi, Qais M.

    2015-01-01

    In this thesis, we present theoretical and experimental investigation into the nonlinear statics and dynamics of clamped-clamped in-plane MEMS arches when excited by an electrostatic force. Theoretically, we first solve the equation of motion using

  19. Movable MEMS Devices on Flexible Silicon

    KAUST Repository

    Ahmed, Sally

    2013-01-01

    Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS

  20. Cryogenic MEMS Pressure Sensor, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A directly immersible cryogenic MEMS pressure sensor will be developed. Each silicon die will contain a vacuum-reference and a tent-like membrane. Offsetting thermal...

  1. MEMS Sensors and Actuators Laboratory (MSAL)

    Data.gov (United States)

    Federal Laboratory Consortium — The MEMS Sensors and Actuators Laboratory (MSAL) in the A.J. Clark School of Engineering at the University of Maryland (UMD) was established in January 2000. Our lab...

  2. Optical MEMS for chemical analysis and biomedicine

    CERN Document Server

    Jiang, Hongrui

    2016-01-01

    This book describes the current state of optical MEMS in chemical and biomedical analysis and brings together current trends and highlights topics representing the most exciting progress in recent years in the field.

  3. Active mems microbeam device for gas detection

    KAUST Repository

    Bouchaala, Adam M.; Jaber, Nizar; Younis, Mohammad I.

    2017-01-01

    Sensors and active switches for applications in gas detection and other fields are described. The devices are based on the softening and hardening nonlinear response behaviors of microelectromechanical systems (MEMS) clamped-clamped microbeams

  4. MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

    KAUST Repository

    Elshurafa, Amro M.; El-Masry, Ezz I.

    2010-01-01

    , customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices

  5. Racetrack microtron rf system

    International Nuclear Information System (INIS)

    Tallerico, P.J.; Keffeler, D.R.

    1985-01-01

    The rf system for the National Bureau of Standards (NBS)/Los Alamos cw racetrack microtron is described. The low-power portion consists of five 75-W amplifers that drive two input ports in each of two chopper deflection cavities and one port in the prebuncher cavity. A single 500-kW klystron drives four separate 2380-MHz cavity sections: the two main accelerator sections, a capture section, and a preaccelerator section. The phases and amplitudes in all cavities are controlled by electronic or electromechanical controls. The 1-MW klystron power supply and crowbar system were purchased as a unit; several modifications are described that improve power-supply performance. The entire rf system has been tested and shipped to the NBS, and the chopper-buncher system has been operated with beam at the NBS. 5 refs., 2 figs

  6. RF Gun Optimization Study

    International Nuclear Information System (INIS)

    Alicia Hofler; Pavel Evtushenko

    2007-01-01

    Injector gun design is an iterative process where the designer optimizes a few nonlinearly interdependent beam parameters to achieve the required beam quality for a particle accelerator. Few tools exist to automate the optimization process and thoroughly explore the parameter space. The challenging beam requirements of new accelerator applications such as light sources and electron cooling devices drive the development of RF and SRF photo injectors. A genetic algorithm (GA) has been successfully used to optimize DC photo injector designs at Cornell University [1] and Jefferson Lab [2]. We propose to apply GA techniques to the design of RF and SRF gun injectors. In this paper, we report on the initial phase of the study where we model and optimize a system that has been benchmarked with beam measurements and simulation

  7. Nano-tribology and materials in MEMS

    CERN Document Server

    Satyanarayana, N; Lim, Seh

    2013-01-01

    This book brings together recent developments in the areas of MEMS tribology, novel lubricants and coatings for nanotechnological applications, biomimetics in tribology and fundamentals of micro/nano-tribology. Tribology plays important roles in the functioning and durability of machines at small length scales because of the problems associated with strong surface adhesion, friction, wear etc. Recently, a number of studies have been conducted to understand tribological phenomena at nano/micro scales and many new tribological solutions for MEMS have been proposed.

  8. MEMS for pico- to micro-satellites

    OpenAIRE

    Shea, Herbert

    2009-01-01

    MEMS sensors, actuators, and sub-systems can enable an important reduction in the size and mass of spacecrafts, first by replacing larger and heavier components, then by replacing entire subsystems, and finally by enabling the microfabrication of highly integrated picosats. Very small satellites (1 to 100 kg) stand to benefit the most from MEMS technologies. These small satellites are typically used for science or technology demonstration missions, with higher risk tolerance than multi-ton te...

  9. Recent Progress in Silicon Mems Oscillators

    Science.gov (United States)

    2008-12-01

    MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

  10. Digital holography for MEMS and microsystem metrology

    CERN Document Server

    Asundi, Anand

    2011-01-01

    Approaching the topic of digital holography from the practical perspective of industrial inspection, Digital Holography for MEMS and Microsystem Metrology describes the process of digital holography and its growing applications for MEMS characterization, residual stress measurement, design and evaluation, and device testing and inspection. Asundi also provides a thorough theoretical grounding that enables the reader to understand basic concepts and thus identify areas where this technique can be adopted. This combination of both practical and theoretical approach will ensure the

  11. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  12. Pulsed rf operation analysis

    International Nuclear Information System (INIS)

    Puglisi, M.; Cornacchia, M.

    1981-01-01

    The need for a very low final amplifier output impedance, always associated with class A operation, requires a very large power waste in the final tube. The recently suggested pulsed rf operation, while saving a large amount of power, increases the inherent final amplifier non linearity. A method is presented for avoiding the large signal non linear analysis and it is shown how each component of the beam induced voltage depends upon all the beam harmonics via some coupling coefficients which are evaluated

  13. RF pulse compression development

    International Nuclear Information System (INIS)

    Farkas, Z.D.; Weaver, J.N.

    1987-10-01

    The body of this paper discusses the theory and some rules for designing a multistage Binary Energy Compressor (BEC) including its response to nonstandard phase coding, describes some proof-of-principle experiments with a couple of low power BECs, presents the design parameters for some sample linear collider rf systems that could possibly use a BEC to advantage and outlines in the conclusion some planned R and D efforts. 8 refs., 26 figs., 4 tabs

  14. RF Pulsed Heating

    Energy Technology Data Exchange (ETDEWEB)

    Pritzkau, David P.

    2002-01-03

    RF pulsed heating is a process by which a metal is heated from magnetic fields on its surface due to high-power pulsed RF. When the thermal stresses induced are larger than the elastic limit, microcracks and surface roughening will occur due to cyclic fatigue. Pulsed heating limits the maximum magnetic field on the surface and through it the maximum achievable accelerating gradient in a normal conducting accelerator structure. An experiment using circularly cylindrical cavities operating in the TE{sub 011} mode at a resonant frequency of 11.424 GHz is designed to study pulsed heating on OFE copper, a material commonly used in normal conducting accelerator structures. The high-power pulsed RF is supplied by an X-band klystron capable of outputting 50 MW, 1.5 {micro}s pulses. The test pieces of the cavity are designed to be removable to allow testing of different materials with different surface preparations. A diagnostic tool is developed to measure the temperature rise in the cavity utilizing the dynamic Q change of the resonant mode due to heating. The diagnostic consists of simultaneously exciting a TE{sub 012} mode to steady-state in the cavity at 18 GHz and measuring the change in reflected power as the cavity is heated from high-power pulsed RF. Two experimental runs were completed. One run was executed at a calculated temperature rise of 120 K for 56 x 10{sup 6} pulses. The second run was executed at a calculated temperature rise of 82 K for 86 x 10{sup 6} pulses. Scanning electron microscope pictures show extensive damage occurring in the region of maximum temperature rise on the surface of the test pieces.

  15. Microwave and RF engineering

    CERN Document Server

    Sorrentino, Roberto

    2010-01-01

    An essential text for both students and professionals, combining detailed theory with clear practical guidance This outstanding book explores a large spectrum of topics within microwave and radio frequency (RF) engineering, encompassing electromagnetic theory, microwave circuits and components. It provides thorough descriptions of the most common microwave test instruments and advises on semiconductor device modelling. With examples taken from the authors' own experience, this book also covers:network and signal theory;electronic technology with guided electromagnetic pr

  16. An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

    Science.gov (United States)

    Prashad, Har

    1992-07-01

    A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

  17. A novel piezoresistive polymer nanocomposite MEMS accelerometer

    International Nuclear Information System (INIS)

    Seena, V; Hari, K; Prajakta, S; Ramgopal Rao, V; Pratap, Rudra

    2017-01-01

    A novel polymer MEMS (micro electro mechanical systems) accelerometer with photo-patternable polymer nanocomposite as a piezoresistor is presented in this work. Polymer MEMS Accelerometer with beam thicknesses of 3.3 µ m and embedded nanocomposite piezoresistive layer having a gauge factor of 90 were fabricated. The photosensitive nanocomposite samples were prepared and characterized for analyzing the mechanical and electrical properties and thereby ensuring proper process parameters for incorporating the piezoresistive layer into the polymer MEMS accelerometer. The microfabrication process flow and unit processes followed are extremely low cost with process temperatures below 100 °C. This also opens up a new possibility for easy integration of such polymer MEMS with CMOS (complementary metal oxide semiconductor) devices and circuits. The fabricated devices were characterized using laser Doppler vibrometer (LDV) and the devices exhibited a resonant frequency of 10.8 kHz and a response sensitivity of 280 nm g −1 at resonance. The main focus of this paper is on the SU-8/CB nanocomposite piezoresistive MEMS accelerometer technology development which covers the material and the fabrication aspects of these devices. CoventorWare FEA analysis performed using the extracted material properties from the experimental characterization which are in close agreement to performance parameters of the fabricated devices is also discussed. The simulated piezoresistive polymer MEMS devices showed an acceleration sensitivity of 126 nm g −1 and 82 ppm of Δ R / R per 1 g of acceleration. (paper)

  18. MEMS- and NEMS-based smart devices and systems

    Science.gov (United States)

    Varadan, Vijay K.

    2001-11-01

    The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sized now don at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic an micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sensing and control of a variety functions in automobile, aerospace, marine and civil

  19. Capacitance enhancement via electrode patterning

    International Nuclear Information System (INIS)

    Ho, Tuan A.; Striolo, Alberto

    2013-01-01

    The necessity of increasing the energy density in electric double layer capacitors to meet current demand is fueling fundamental and applied research alike. We report here molecular dynamics simulation results for aqueous electrolytes near model electrodes. Particular focus is on the effect of electrode patterning on the structure of interfacial electrolytes, and on the potential drop between the solid electrodes and the bulk electrolytes. The latter is estimated by numerically integrating the Poisson equation using the charge densities due to water and ions accumulated near the interface as input. We considered uniform and patterned electrodes, both positively and negatively charged. The uniformly charged electrodes are modeled as graphite. The patterned ones are obtained by removing carbon atoms from the top-most graphene layer, yielding nanoscopic squares and stripes patterns. For simplicity, the patterned electrodes are effectively simulated as insulators (the charge remains localized on the top-most layer of carbon atoms). Our simulations show that the patterns alter the structure of water and the accumulation of ions at the liquid-solid interfaces. Using aqueous NaCl solutions, we found that while the capacitance calculated for three positively charged electrodes did not change much, that calculated for the negatively charged electrodes significantly increased upon patterning. We find that both water structure and orientation, as well as ion accumulation affect the capacitance. As electrode patterning affects differently water structure and ion accumulation, it might be possible to observe ion-specific effects. These results could be useful for advancing our understanding of electric double layer capacitors, capacitive desalination processes, as well as of fundamental interfacial electrolytes properties

  20. Aspheric surface measurement using capacitive probes

    Science.gov (United States)

    Tao, Xin; Yuan, Daocheng; Li, Shaobo

    2017-02-01

    With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

  1. A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

    KAUST Repository

    Omran, Hesham

    2016-11-16

    A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

  2. Theoretical and experimental study of the bending influence on the capacitance of interdigitated micro-electrodes patterned on flexible substrates

    International Nuclear Information System (INIS)

    Molina-Lopez, F.; Briand, D.; Rooij, N. F. de; Kinkeldei, T.; Tröster, G.

    2013-01-01

    Interdigitated electrodes are common structures in the fields of microelectronics and MEMS. Recent developments in flexible electronics compel an understanding of such structures under bending constraints. In this work, the behavior of interdigitated micro-electrodes when subjected to circular bending has been theoretically and experimentally studied through changes in capacitance. An analytical model has been developed to calculate the expected variation in capacitance of such structures while undergoing outward and inward bending along the direction perpendicular to the electrodes. The model combines conformal mapping techniques to account for the electric field redistribution and fundamental aspects of solid mechanics in order to define the geometrical deformation of the electrodes while bending. To experimentally verify our theoretical predictions, several interdigitated electrode structures with different geometries were fabricated on polymeric substrates by means of photolithography. The samples, placed in a customized bending setup, were bent to controlled radii of curvature while measuring their capacitance. A maximum variation in capacitance of less than 3% was observed at a minimum radius of curvature of 2.5 mm for all the devices tested with very thin electrodes whereas changes of up to 7% were found on stiffer, plated electrodes. Larger or smaller variations would be possible, in theory, by adjusting the geometry of the device. This work establishes a useful predictive tool for the design and evaluation of truly flexible/bendable electronics consisting of interdigitated structures, allowing one to tune the bending influence on the capacitance value through geometrical design

  3. A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

    KAUST Repository

    Omran, Hesham; Alhoshany, Abdulaziz; Alahmadi, Hamzah; Salama, Khaled N.

    2016-01-01

    A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

  4. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed

    2015-08-02

    In this paper, a capacitive temperature sensor based on polyvinylidene fluoride (PVDF) capacitor is explored. The PVDF capacitor is characterized below its Curie temperature. The capacitance of the PVDF capacitor changes vs temperature with a sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  5. Ultrahigh Temperature Capacitive Pressure Sensor

    Science.gov (United States)

    Harsh, Kevin

    2014-01-01

    Robust, miniaturized sensing systems are needed to improve performance, increase efficiency, and track system health status and failure modes of advanced propulsion systems. Because microsensors must operate in extremely harsh environments, there are many technical challenges involved in developing reliable systems. In addition to high temperatures and pressures, sensing systems are exposed to oxidation, corrosion, thermal shock, fatigue, fouling, and abrasive wear. In these harsh conditions, sensors must be able to withstand high flow rates, vibration, jet fuel, and exhaust. In order for existing and future aeropropulsion turbine engines to improve safety and reduce cost and emissions while controlling engine instabilities, more accurate and complete sensor information is necessary. High-temperature (300 to 1,350 C) capacitive pressure sensors are of particular interest due to their high measurement bandwidth and inherent suitability for wireless readout schemes. The objective of this project is to develop a capacitive pressure sensor based on silicon carbon nitride (SiCN), a new class of high-temperature ceramic materials, which possesses excellent mechanical and electric properties at temperatures up to 1,600 C.

  6. Capacitive Feedthroughs for Medical Implants.

    Science.gov (United States)

    Grob, Sven; Tass, Peter A; Hauptmann, Christian

    2016-01-01

    Important technological advances in the last decades paved the road to a great success story for electrically stimulating medical implants, including cochlear implants or implants for deep brain stimulation. However, there are still many challenges in reducing side effects and improving functionality and comfort for the patient. Two of the main challenges are the wish for smaller implants on one hand, and the demand for more stimulation channels on the other hand. But these two aims lead to a conflict of interests. This paper presents a novel design for an electrical feedthrough, the so called capacitive feedthrough, which allows both reducing the size, and increasing the number of included channels. Capacitive feedthroughs combine the functionality of a coupling capacitor and an electrical feedthrough within one and the same structure. The paper also discusses the progress and the challenges of the first produced demonstrators. The concept bears a high potential in improving current feedthrough technology, and could be applied on all kinds of electrical medical implants, even if its implementation might be challenging.

  7. Design of traveling wave windows for the PEP-II RF coupling network

    International Nuclear Information System (INIS)

    Kroll, N.M.; Ng, C.K.; Judkins, J.; Neubauer, M.

    1995-05-01

    The waveguide windows in the PEP-II RF coupling network have to withstand high power of 500 kW. Traveling wave windows have lower power dissipation than conventional self-matched windows, thus rendering the possibility of less stringent mechanical design. The traveling wave behavior is achieved by providing a reflecting iris on each side of the window, and depending on the configuration of the irises, traveling wave windows are characterized as inductive or capacitive types. A numerical design procedure using MAFIA has been developed for traveling wave windows. The relative advantages of inductive and capacitive windows are discussed. Furthermore, the issues of bandwidth and multipactoring are also addressed

  8. Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

    Science.gov (United States)

    Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

    2017-03-09

    For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

  9. High precision capacitive beam phase probe for KHIMA project

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ji-Gwang, E-mail: windy206@hanmail.net [Korea Institute of Radiological and Medical Sciences, 215–4, Gongneung-dong, Nowon-t, Seoul 139–706 (Korea, Republic of); Yang, Tae-Keun [Korea Institute of Radiological and Medical Sciences, 215–4, Gongneung-dong, Nowon-t, Seoul 139–706 (Korea, Republic of); Forck, Peter [GSI Helmholtz Centre for Ion Research, Darmstadt 64291, German (Germany)

    2016-11-21

    In the medium energy beam transport (MEBT) line of KHIMA project, a high precision beam phase probe monitor is required for a precise tuning of RF phase and amplitude of Radio Frequency Quadrupole (RFQ) accelerator and IH-DTL linac. It is also used for measuring a kinetic energy of ion beam by time-of-flight (TOF) method using two phase probes. The capacitive beam phase probe has been developed. The electromagnetic design of the high precision phase probe was performed to satisfy the phase resolution of 1° (@200 MHz). It was confirmed by the test result using a wire test bench. The measured phase accuracy of the fabricated phase probe is 1.19 ps. The pre-amplifier electronics with the 0.125 ∼ 1.61 GHz broad-band was designed and fabricated for amplifying the signal strength. The results of RF frequency and beam energy measurement using a proton beam from the cyclotron in KIRAMS is presented.

  10. Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

    Science.gov (United States)

    Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

    2001-01-01

    In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

  11. RF linacs for FELs

    International Nuclear Information System (INIS)

    Schwettman, H.A.

    1992-01-01

    There are twenty rf linac-driven Free Electron Lasers (FELs) existing or under construction throughout the world and proposals for several more. A number of these FELs have recently been established as facilities to produce coherent optical beams for materials and biomedical research. Both short pulse low duty factor and long pulse high duty factor linac-driven FELs will be discussed. Accelerator issues that influence the performance of an FEL as a scientific instrument will be indicated. (Author) 6 refs., 6 figs., 2 tabs

  12. RF impedance measurement calibration

    International Nuclear Information System (INIS)

    Matthews, P.J.; Song, J.J.

    1993-01-01

    The intent of this note is not to explain all of the available calibration methods in detail. Instead, we will focus on the calibration methods of interest for RF impedance coupling measurements and attempt to explain: (1). The standards and measurements necessary for the various calibration techniques. (2). The advantages and disadvantages of each technique. (3). The mathematical manipulations that need to be applied to the measured standards and devices. (4). An outline of the steps needed for writing a calibration routine that operated from a remote computer. For further details of the various techniques presented in this note, the reader should consult the references

  13. Low frequency rf current drive

    International Nuclear Information System (INIS)

    Hershkowitz, N.

    1992-01-01

    An unshielded antenna for rf heating has been developed and tested during this report period. In addition to design specifications being given, some experimental results are presented utilizing: (1) an unprotected Faraday shield, (2) insulating guard limiters, (3) unshielded antenna experiments, (4) method for detecting small rf driven currents, (5) rf fast wave current drive experiments, (6) alfven wave interactions with electrons, and (7) machine conditioning, impurity generation and density control

  14. A new interface weak-capacitance detection ASIC of capacitive liquid level sensor in the rocket

    Science.gov (United States)

    Yin, Liang; Qin, Yao; Liu, Xiao-Wei

    2017-11-01

    A new capacitive liquid level sensing interface weak-capacitance detection ASIC has been designed. This ASIC realized the detection of the output capacitance of the capacitive liquid level sensor, which converts the output capacitance of the capacitive liquid level sensor to voltage. The chip is fabricated in a standard 0.5μm CMOS process. The test results show that the linearity of capacitance detection of the ASIC is 0.05%, output noise is 3.7aF/Hz (when the capacitance which will be detected is 40 pF), the stability of capacitance detection is 7.4 × 10-5pF (1σ, 1h), the output zero position temperature coefficient is 4.5 uV/∘C. The test results prove that this interface ASIC can meet the requirement of high accuracy capacitance detection. Therefore, this interface ASIC can be applied in capacitive liquid level sensing and capacitive humidity sensing field.

  15. MEMS Rotary Engine Power System

    Science.gov (United States)

    Fernandez-Pello, A. Carlos; Pisano, Albert P.; Fu, Kelvin; Walther, David C.; Knobloch, Aaron; Martinez, Fabian; Senesky, Matt; Stoldt, Conrad; Maboudian, Roya; Sanders, Seth; Liepmann, Dorian

    This work presents a project overview and recent research results for the MEMS Rotary Engine Power System project at the Berkeley Sensor & Actuator Center of the University of California at Berkeley. The research motivation for the project is the high specific energy density of hydrocarbon fuels. When compared with the energy density of batteries, hydrocarbon fuels may have as much as 20x more energy. However, the technical challenge is the conversion of hydrocarbon fuel to electricity in an efficient and clean micro engine. A 12.9 mm diameter Wankel engine will be shown that has already generated 4 Watts of power at 9300rpm. In addition, the 1mm and 2.4 mm Wankel engines that BSAC is developing for power generation at the microscale will be discussed. The project goal is to develop electrical power output of 90milliwatts from the 2.4 mm engine. Prototype engine components have already been fabricated and these will be described. The integrated generator design concept utilizes a nickel-iron alloy electroplated in the engine rotor poles, so that the engine rotor also serves as the generator rotor.

  16. Mid infrared MEMS FTIR spectrometer

    Science.gov (United States)

    Erfan, Mazen; Sabry, Yasser M.; Mortada, Bassem; Sharaf, Khaled; Khalil, Diaa

    2016-03-01

    In this work we report, for the first time to the best of our knowledge, a bulk-micromachined wideband MEMS-based spectrometer covering both the NIR and the MIR ranges and working from 1200 nm to 4800 nm. The core engine of the spectrometer is a scanning Michelson interferometer micro-fabricated using deep reactive ion etching (DRIE) technology. The spectrum is obtained using the Fourier Transform techniques that allows covering a very wide spectral range limited by the detector responsivity. The moving mirror of the interferometer is driven by a relatively large stroke electrostatic comb-drive actuator. Zirconium fluoride (ZrF4) multimode optical fibers are used to connect light between the white light source and the interferometer input, as well as the interferometer output to a PbSe photoconductive detector. The recorded signal-to-noise ratio is 25 dB at the wavelength of 3350 nm. The spectrometer is successfully used in measuring the absorption spectra of methylene chloride, quartz glass and polystyrene film. The presented solution provides a low cost method for producing miniaturized spectrometers in the near-/mid-infrared.

  17. MEMS/MOEMS foundry services at INO

    Science.gov (United States)

    García-Blanco, Sonia; Ilias, Samir; Williamson, Fraser; Généreux, Francis; Le Noc, Loïc; Poirier, Michel; Proulx, Christian; Tremblay, Bruno; Provençal, Francis; Desroches, Yan; Caron, Jean-Sol; Larouche, Carl; Beaupré, Patrick; Fortin, Benoit; Topart, Patrice; Picard, Francis; Alain, Christine; Pope, Timothy; Jerominek, Hubert

    2010-06-01

    In the MEMS manufacturing world, the "fabless" model is getting increasing importance in recent years as a way for MEMS manufactures and startups to minimize equipment costs and initial capital investment. In order for this model to be successful, the fabless company needs to work closely with a MEMS foundry service provider. Due to the lack of standardization in MEMS processes, as opposed to CMOS microfabrication, the experience in MEMS development processes and the flexibility of the MEMS foundry are of vital importance. A multidisciplinary team together with a complete microfabrication toolset allows INO to offer unique MEMS foundry services to fabless companies looking for low to mid-volume production. Companies that benefit from their own microfabrication facilities can also be interested in INO's assistance in conducting their research and development work during periods where production runs keep their whole staff busy. Services include design, prototyping, fabrication, packaging, and testing of various MEMS and MOEMS devices on wafers fully compatible with CMOS integration. Wafer diameters ranging typically from 1 inch to 6 inches can be accepted while 8-inch wafers can be processed in some instances. Standard microfabrication techniques such as metal, dielectric, and semiconductor film deposition and etching as well as photolithographic pattern transfer are available. A stepper permits reduction of the critical dimension to around 0.4 μm. Metals deposited by vacuum deposition methods include Au, Ag, Al, Al alloys, Ti, Cr, Cu, Mo, MoCr, Ni, Pt, and V with thickness varying from 5 nm to 2 μm. Electroplating of several materials including Ni, Au and In is also available. In addition, INO has developed and built a gold black deposition facility to answer customer's needs for broadband microbolometric detectors. The gold black deposited presents specular reflectance of less than 10% in the wavelength range from 0.2 μm to 100 μm with thickness ranging from

  18. A review of vibration-based MEMS piezoelectric energy harvesters

    Energy Technology Data Exchange (ETDEWEB)

    Saadon, Salem; Sidek, Othman [Collaborative Microelectronic Design Excellence Center (CEDEC), School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang (Malaysia)

    2011-01-15

    The simplicity associated with the piezoelectric micro-generators makes it very attractive for MEMS applications, especially for remote systems. In this paper we reviewed the work carried out by researchers during the last three years. The improvements in experimental results obtained in the vibration-based MEMS piezoelectric energy harvesters show very good scope for MEMS piezoelectric harvesters in the field of power MEMS in the near future. (author)

  19. Positioning of the rf potential minimum line of a linear Paul trap with micrometer precision

    DEFF Research Database (Denmark)

    Herskind, Peter Fønss; Dantan, Aurélien; Albert, Magnus

    2009-01-01

    We demonstrate a general technique to achieve a precise radial displacement of the nodal line of the radiofrequency (rf) field in a linear Paul trap. The technique relies on the selective adjustment of the load capacitance of the trap electrodes, achieved through the addition of capacitors...... to the basic resonant rf circuit used to drive the trap. Displacements of up to ~100 µm with micrometer precision are measured using a combination of fluorescence images of ion Coulomb crystals and coherent coupling of such crystals to a mode of an optical cavity. The displacements are made without measurable...

  20. A Nuclear Microbattery for MEMS Devices

    International Nuclear Information System (INIS)

    Blanchard, James; Henderson, Douglass; Lal, Amit

    2002-01-01

    This project was designed to demonstrate the feasibility of producing on-board power for MEMS devices using radioisotopes. MEMS is a fast growing field, with hopes for producing a wide variety of revolutionary applications, including ''labs on a chip,'' micromachined scanning tunneling microscopes, microscopic detectors for biological agents, microsystems for DNA identification, etc. Currently, these applications are limited by the lack of an on-board power source. Research is ongoing to study approaches such as fuel cells, fossil fuels, and chemical batteries, but all these concepts have limitations. For long-lived, high energy density applications, on-board radioisotope power offers the best choice. We have succeeded in producing such devices using a variety of isotopes, incorporation methods, and device geometries. These experiments have demonstrated the feasibility of using radioisotope power and that there are a variety of options available for MEMS designers. As an example of an integrated, self-powered application, we have created an oscillating cantilever beam that is capable of consistent, periodic oscillations over very long time periods without the need for refueling. Ongoing work will demonstrate that this cantilever is capable of radio frequency transmission, allowing MEMS devices to communicate with one another wirelessly. Thus, this will be the first self-powered wireless transmitter available for use in MEMS devices, permitting such applications as sensors embedded in buildings for continuous monitoring of the building performance and integrity

  1. SPS RF Accelerating Cavity

    CERN Multimedia

    1979-01-01

    This picture shows one of the 2 new cavities installed in 1978-1979. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X

  2. rf experiments on PLT

    International Nuclear Information System (INIS)

    Hosea, J.; Wilson, J.R.; Hooke, W.

    1986-01-01

    A variety of rf experiments are being conducted on PLT in order to explore rf techniques which could improve tokamak performance parameters. Of special importance are the studies of ion Bernstein wave (IBW) heating, lower hybrid MHD stabilization and electron heating, down-shifted electron cyclotron heating, and fast wave current drive. Ion Bernstein wave heating results at modest power indicate that the particle confinement time could be enhanced relative to that for fast wave heating in the ion cyclotron range of frequencies (ICRF) and neutral beam heating. At these power levels a conclusive determination of energy confinement scaling with power cannot yet be given. Central sawtooth and m = 1 MHD stabilization is being obtained with centrally peaked lower hybrid (LH) current drive and the central electron temperature is peaking to values (approx.5 keV) well outside the bounds of ''profile consistency.'' In this case the electron energy confinement is apparently increased relative to the ohmic value. The production of relativistic electrons via heating at the down-shifted electron cyclotron (EC) frequency is found to be consistent with theoretical predictions and lends support to the use of this method for heating in relatively high magnetic field devices

  3. Accurate modeling of complete functional RF blocks: CHAMELEON RF

    NARCIS (Netherlands)

    Janssen, H.H.J.M.; Niehof, J.; Schilders, W.H.A.; Ciuprina, G.; Ioan, D.

    2007-01-01

    Next-generation nano-scale RF-IC designs have an unprecedented complexity and performance that will inevitably lead to costly re-spins and loss of market opportunities. In order to cope with this, the aim of the European Framework 6 CHAMELEON RF project is to develop methodologies and prototype

  4. The Spallation Neutron Source RF Reference System

    CERN Document Server

    Piller, Maurice; Crofford, Mark; Doolittle, Lawrence; Ma, Hengjie

    2005-01-01

    The Spallation Neutron Source (SNS) RF Reference System includes the master oscillator (MO), local oscillator(LO) distribution, and Reference RF distribution systems. Coherent low noise Reference RF signals provide the ability to control the phase relationships between the fields in the front-end and linear accelerator (linac) RF cavity structures. The SNS RF Reference System requirements, implementation details, and performance are discussed.

  5. The split delivery capacitated team orienteering problem

    NARCIS (Netherlands)

    Archetti, C.; Bianchessi, N.; Speranza, M. G.; Hertz, A.

    2014-01-01

    In this article, we study the capacitated team orienteering problem where split deliveries are allowed. A set of potential customers is given, each associated with a demand and a profit. The set of customers to be served by a fleet of capacitated vehicles has to be identified in such a way that the

  6. Capacitance densitometer for flow regime identification

    International Nuclear Information System (INIS)

    Shipp, R.L. Jr.

    1978-01-01

    This invention relates to a capacitance densitometer for determining the flow regime of a two-phase flow system. A two-element capacitance densitometer is used in conjunction with a conventional single-beam gamma densitometer to unambiguously identify the prevailing flow regime and the average density of a flowing fluid

  7. Design of double capacitances infrasonic receiver

    International Nuclear Information System (INIS)

    Wang Changhai; Han Kuixia; Wang Fei

    2003-01-01

    The article introduces the theory of infrasonic generation and reception of nuclear explosion. An idea of the design of double capacitances infrasonic receiver using CPLD technology is given in it. Compare with the single capacitance infrasonic receiver, sensitivity of the improved receiver can be improved scores of times, dynamic range can be improved largely, and the whole performance gets improvement a lots

  8. The Pyramidal Capacitated Vehicle Routing Problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    This paper introduces the Pyramidal Capacitated Vehicle Routing Problem (PCVRP) as a restricted version of the Capacitated Vehicle Routing Problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the Pyramidal Traveling Salesman Problem (PTSP). A pyramidal...

  9. The pyramidal capacitated vehicle routing problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    2010-01-01

    This paper introduces the pyramidal capacitated vehicle routing problem (PCVRP) as a restricted version of the capacitated vehicle routing problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the pyramidal traveling salesman problem (PTSP). A pyramidal...

  10. Scanning Capacitance Microscopy | Materials Science | NREL

    Science.gov (United States)

    obtained using scanning capacitance microscopy. Top Right: Image of p-type and n-type material, obtained 'fingers' of light-colored n-type material on a yellow and blue background representing p-type material material, obtained using scanning capacitance microscopy, in a sample semiconductor device; the image shows

  11. Capacitive Biosensors and Molecularly Imprinted Electrodes.

    Science.gov (United States)

    Ertürk, Gizem; Mattiasson, Bo

    2017-02-17

    Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

  12. Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

    Energy Technology Data Exchange (ETDEWEB)

    Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E. [Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720-1770 (United States); Chabert, P. [Laboratoire de Physique des Plasmas, CNRS, Ecole Polytechnique, UPMC, Paris XI, Observatoire de Paris, 91128 Palaiseau (France)

    2016-01-15

    It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths and the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.

  13. Optical MEMS for earth observation payloads

    Science.gov (United States)

    Rodrigues, B.; Lobb, D. R.; Freire, M.

    2017-11-01

    An ESA study has been taken by Lusospace Ltd and Surrey Satellite Techonoly Ltd (SSTL) into the use of optical Micro Eletro-Mechanical Systems (MEMS) for earth Observation. A review and analysis was undertaken of the Micro-Optical Electro-Mechanical Systems (MOEMS) available in the market with potential application in systems for Earth Observation. A summary of this review will be presented. Following the review two space-instrument design concepts were selected for more detailed analysis. The first was the use of a MEMS device to remove cloud from Earth images. The concept is potentially of interest for any mission using imaging spectrometers. A spectrometer concept was selected and detailed design aspects and benefits evaluated. The second concept developed uses MEMS devices to control the width of entrance slits of spectrometers, to provide variable spectral resolution. This paper will present a summary of the results of the study.

  14. MEMS tunable grating micro-spectrometer

    Science.gov (United States)

    Tormen, Maurizio; Lockhart, R.; Niedermann, P.; Overstolz, T.; Hoogerwerf, A.; Mayor, J.-M.; Pierer, J.; Bosshard, C.; Ischer, R.; Voirin, G.; Stanley, R. P.

    2017-11-01

    The interest in MEMS based Micro-Spectrometers is increasing due to their potential in terms of flexibility as well as cost, low mass, small volume and power savings. This interest, especially in the Near-Infrared and Mid- Infrared, ranges from planetary exploration missions to astronomy, e.g. the search for extra solar planets, as well as to many other terrestrial fields of application such as, industrial quality and surface control, chemical analysis of soil and water, detection of chemical pollutants, exhausted gas analysis, food quality control, process control in pharmaceuticals, to name a few. A compact MEMS-based Spectrometer for Near- Infrared and Mid-InfraRed operation have been conceived, designed and demonstrated. The design based on tunable MEMS blazed grating, developed in the past at CSEM [1], achieves state of the art results in terms of spectral resolution, operational wavelength range, light throughput, overall dimensions, and power consumption.

  15. Circuit design for RF transceivers

    CERN Document Server

    Leenaerts, Domine; Vaucher, Cicero S

    2007-01-01

    Second edition of this successful 2001 RF Circuit Design book, has been updated, latest technology reviews have been added as well as several actual case studies. Due to the authors being active in industry as well as academia, this should prove to be an essential guide on RF Transceiver Design for students and engineers.

  16. RF-Station control crate

    International Nuclear Information System (INIS)

    Beuzekom, M.G. van; Es, J.T. van.

    1992-01-01

    This report gives a description of the electronic control-system for the RF-station of AmPS. The electronics form the connection between the computer-system and the hardware of the RF-station. Only the elements of the systems which are not described in the other NIKHEF-reports are here discussed in detail. (author). 7 figs

  17. Enabling technology for MEMS and nanodevices

    CERN Document Server

    Baltes, Henry; Fedder, Gary K; Hierold, Christofer; Korvink, Jan G; Tabata, Osamu

    2013-01-01

    This softcover edition of the eponymous volume from the successful ""Advanced Micro & Nanosystems"" series covers all aspects of fabrication of MEMS under CMOS-compatible conditions from design to implementation.It examines the various routes and methods to combine electronics generated by the CMOS technology with novel micromechanical parts into one-chip solutions. Various approaches, fundamental and technological aspects as well as strategies leading to different types of functionalities and presented in detail.For the practicing engineer as well as MSc and PhD students on MEMS cours

  18. Hermeticity testing of MEMS and microelectronic packages

    CERN Document Server

    Costello, Suzanne

    2013-01-01

    Packaging of microelectronics has been developing since the invention of the transistor in 1947. With the increasing complexity and decreasing size of the die, packaging requirements have continued to change. A step change in package requirements came with the introduction of the Micro-Electro-Mechanical System (MEMS) whereby interactions with the external environment are, in some cases, required.This resource is a rapid, definitive reference on hermetic packaging for the MEMS and microelectronics industry, giving practical guidance on traditional and newly developed test methods. This book in

  19. Applications of MEMS for Space Exploration

    Science.gov (United States)

    Tang, William C.

    1998-03-01

    Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. Micro Electro Mechanical Systems (MEMS) is one of the key enabling technologies to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

  20. Antenna Miniaturization with MEMS Tunable Capacitors

    DEFF Research Database (Denmark)

    Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

    2014-01-01

    In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

  1. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-01-01

    zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF

  2. Refurbishments of RF systems

    International Nuclear Information System (INIS)

    Baelde, J.L.

    1998-01-01

    This document describes the activities of the R.F. System group during the years 1995-1996 in the frame of the refurbishment of the control system at GANIL accelerator. Modifications concerning the following sub-assemblies are mentioned: 1. voltage standards; 2. link card between the step by step motor control and the local control systems; 3. polarization system; 4. computer software for different operations. Also reported is the installation of ECR 4 source for the CO2. In this period the R2 Regrouping system has been installed, tested and put into operation. Several problems concerning the mechanical installation of the coupling loop and other problems related to the electronics operation were solved. The results obtained with the THI machine are presented

  3. Beam induced RF heating

    CERN Document Server

    Salvant, B; Arduini, G; Assmann, R; Baglin, V; Barnes, M J; Bartmann, W; Baudrenghien, P; Berrig, O; Bracco, C; Bravin, E; Bregliozzi, G; Bruce, R; Bertarelli, A; Carra, F; Cattenoz, G; Caspers, F; Claudet, S; Day, H; Garlasche, M; Gentini, L; Goddard, B; Grudiev, A; Henrist, B; Jones, R; Kononenko, O; Lanza, G; Lari, L; Mastoridis, T; Mertens, V; Métral, E; Mounet, N; Muller, J E; Nosych, A A; Nougaret, J L; Persichelli, S; Piguiet, A M; Redaelli, S; Roncarolo, F; Rumolo, G; Salvachua, B; Sapinski, M; Schmidt, R; Shaposhnikova, E; Tavian, L; Timmins, M; Uythoven, J; Vidal, A; Wenninger, J; Wollmann, D; Zerlauth, M

    2012-01-01

    After the 2011 run, actions were put in place during the 2011/2012 winter stop to limit beam induced radio frequency (RF) heating of LHC components. However, some components could not be changed during this short stop and continued to represent a limitation throughout 2012. In addition, the stored beam intensity increased in 2012 and the temperature of certain components became critical. In this contribution, the beam induced heating limitations for 2012 and the expected beam induced heating limitations for the restart after the Long Shutdown 1 (LS1) will be compiled. The expected consequences of running with 25 ns or 50 ns bunch spacing will be detailed, as well as the consequences of running with shorter bunch length. Finally, actions on hardware or beam parameters to monitor and mitigate the impact of beam induced heating to LHC operation after LS1 will be discussed.

  4. Measured performance of the GTA rf systems

    International Nuclear Information System (INIS)

    Denney, P.M.; Jachim, S.P.

    1993-01-01

    This paper describes the performance of the RF systems on the Ground Test Accelerator (GTA). The RF system architecture is briefly described. Among the RF performance results presented are RF field flatness and stability, amplitude and phase control resolution, and control system bandwidth and stability. The rejection by the RF systems of beam-induced disturbances, such as transients and noise, are analyzed. The observed responses are also compared to computer-based simulations of the RF systems for validation

  5. PolyMEMS Actuator: A Polymer-Based Microelectromechanical (MEMS) Actuator with Macroscopic Action

    Science.gov (United States)

    2002-09-01

    DIRECTOR: MICHAEL L. TALBERT, Maj., USAF Technical Advisor , Information Technology Division Information Directorate...technologies meet even two of the four requirements, whereas PolyMEMS meets all four. Robo -Lobster Courtesy of Dr. Joseph Ayers, Northeastern

  6. SQIF Arrays as RF Sensors (Briefing Charts)

    National Research Council Canada - National Science Library

    Yukon, Stanford P

    2007-01-01

    ... (Superconducting Quantum Interference Filter) arrays may be employed as sensitive RF sensors. RF SQIF arrays fabricated with high Tc Josephson junctions can be cooled with small Sterling microcoolers...

  7. Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

    International Nuclear Information System (INIS)

    Fu, Y Q; Milne, S B; Luo, J K; Flewitt, A J; Wang, L; Miao, J M; Milne, W I

    2006-01-01

    A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, H f O 2 , was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms

  8. Reducing the capacitance of piezoelectric film sensors

    Energy Technology Data Exchange (ETDEWEB)

    González, Martín G., E-mail: mggonza@fi.uba.ar [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), C1425FQB Buenos Aires (Argentina); Sorichetti, Patricio A.; Santiago, Guillermo D. [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina)

    2016-04-15

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N{sup 2}, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  9. Reducing the capacitance of piezoelectric film sensors

    International Nuclear Information System (INIS)

    González, Martín G.; Sorichetti, Patricio A.; Santiago, Guillermo D.

    2016-01-01

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N"2, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  10. A miniature electrical capacitance tomograph

    Science.gov (United States)

    York, T. A.; Phua, T. N.; Reichelt, L.; Pawlowski, A.; Kneer, R.

    2006-08-01

    The paper describes a miniature electrical capacitance tomography system. This is based on a custom CMOS silicon integrated circuit comprising eight channels of signal conditioning electronics to source drive signals and measure voltages. Electrodes are deposited around a hole that is fabricated, using ultrasonic drilling, through a ceramic substrate and has an average diameter of 0.75 mm. The custom chip is interfaced to a host computer via a bespoke data acquisition system based on a microcontroller, field programmable logic device and wide shift register. This provides fast capture of up to 750 frames of data prior to uploading to the host computer. Data capture rates of about 6000 frames per second have been achieved for the eight-electrode sensor. This rate could be increased but at the expense of signal to noise. Captured data are uploaded to a PC, via a RS232 interface, for off-line imaging. Initial tests are reported for the static case involving 200 µm diameter rods that are placed in the sensor and for the dynamic case using the dose from an inhaler.

  11. Improved capacitive melting curve measurements

    International Nuclear Information System (INIS)

    Sebedash, Alexander; Tuoriniemi, Juha; Pentti, Elias; Salmela, Anssi

    2009-01-01

    Sensitivity of the capacitive method for determining the melting pressure of helium can be enhanced by loading the empty side of the capacitor with helium at a pressure nearly equal to that desired to be measured and by using a relatively thin and flexible membrane in between. This way one can achieve a nanobar resolution at the level of 30 bar, which is two orders of magnitude better than that of the best gauges with vacuum reference. This extends the applicability of melting curve thermometry to lower temperatures and would allow detecting tiny anomalies in the melting pressure, which must be associated with any phenomena contributing to the entropy of the liquid or solid phases. We demonstrated this principle in measurements of the crystallization pressure of isotopic helium mixtures at millikelvin temperatures by using partly solid pure 4 He as the reference substance providing the best possible universal reference pressure. The achieved sensitivity was good enough for melting curve thermometry on mixtures down to 100 μK. Similar system can be used on pure isotopes by virtue of a blocked capillary giving a stable reference condition with liquid slightly below the melting pressure in the reference volume. This was tested with pure 4 He at temperatures 0.08-0.3 K. To avoid spurious heating effects, one must carefully choose and arrange any dielectric materials close to the active capacitor. We observed some 100 pW loading at moderate excitation voltages.

  12. Characterization of piezoelectric polymer composites for MEMS ...

    Indian Academy of Sciences (India)

    are obtained so that higher energy densities can be achieved along with ... The quality and reliability of MEMS ... beam are coupled and the bottom face is grounded. The top .... The electrical and mechanical responses of the material near the ...

  13. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.

  14. FinFET and UTBB for RF SOI communication systems

    Science.gov (United States)

    Raskin, Jean-Pierre

    2016-11-01

    Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

  15. Calibration of High Frequency MEMS Microphones

    Science.gov (United States)

    Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

    2007-01-01

    Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

  16. SPEAR 2 RF SYSTEM LOADS

    International Nuclear Information System (INIS)

    2002-01-01

    The design and performance of higher order mode (HOM) dampers for the SPEAR 2 RF system is presented. The SPEAR beam had experienced occasional periods of instability due to transverse oscillations which were driven by HOMs in the RF cavities. A substantial fraction of this RF energy was coupled out of the cavity into the waveguide connecting the cavity to the klystron. This waveguide was modified by adding a stub of smaller cross section, terminated by a ferrite tile load, to the system. Design considerations of the load, and its effect on HOMs and beam stability will be discussed

  17. A single-ended CMOS sensing circuit for MEMS gyroscope with noise cancellation

    KAUST Repository

    Elsayed, Mohannad Yomn

    2010-06-01

    In this work, a complete single-ended readout circuit for capacitive MEMS gyroscope using chopper stabilization technique is presented. A novel noise cancellation technique is used to get rid of the bias noise. The circuit offers superior performance over state of the art readout circuits in terms of cost, gain, and noise for the given area and power consumption. The full circuit exhibits a gain of 58dB, a power dissipation of 1.3mW and an input referred noise of 12nV/√Hz. This would significantly improve the overall sensitivity of the gyroscope. The full circuit has been fabricated in 0.6um CMOS technology and it occupies an area of 0.4mm × 1mm. © 2010 IEEE.

  18. A single-ended CMOS sensing circuit for MEMS gyroscope with noise cancellation

    KAUST Repository

    Elsayed, Mohannad Yomn; Emira, Ahmed; Sedky, Sherif M.; Habib, S. E. D.

    2010-01-01

    In this work, a complete single-ended readout circuit for capacitive MEMS gyroscope using chopper stabilization technique is presented. A novel noise cancellation technique is used to get rid of the bias noise. The circuit offers superior performance over state of the art readout circuits in terms of cost, gain, and noise for the given area and power consumption. The full circuit exhibits a gain of 58dB, a power dissipation of 1.3mW and an input referred noise of 12nV/√Hz. This would significantly improve the overall sensitivity of the gyroscope. The full circuit has been fabricated in 0.6um CMOS technology and it occupies an area of 0.4mm × 1mm. © 2010 IEEE.

  19. MEMS Actuators for Improved Performance and Durability

    Science.gov (United States)

    Yearsley, James M.

    Micro-ElectroMechanical Systems (MEMS) devices take advantage of force-scaling at length scales smaller than a millimeter to sense and interact with directly with phenomena and targets at the microscale. MEMS sensors found in everyday devices like cell-phones and cars include accelerometers, gyros, pressure sensors, and magnetic sensors. MEMS actuators generally serve more application specific roles including micro- and nano-tweezers used for single cell manipulation, optical switching and alignment components, and micro combustion engines for high energy density power generation. MEMS rotary motors are actuators that translate an electric drive signal into rotational motion and can serve as rate calibration inputs for gyros, stages for optical components, mixing devices for micro-fluidics, etc. Existing rotary micromotors suffer from friction and wear issues that affect lifetime and performance. Attempts to alleviate friction effects include surface treatment, magnetic and electrostatic levitation, pressurized gas bearings, and micro-ball bearings. The present work demonstrates a droplet based liquid bearing supporting a rotary micromotor that improves the operating characteristics of MEMS rotary motors. The liquid bearing provides wear-free, low-friction, passive alignment between the rotor and stator. Droplets are positioned relative to the rotor and stator through patterned superhydrophobic and hydrophilic surface coatings. The liquid bearing consists of a central droplet that acts as the motor shaft, providing axial alignment between rotor and stator, and satellite droplets, analogous to ball-bearings, that provide tip and tilt stable operation. The liquid bearing friction performance is characterized through measurement of the rotational drag coefficient and minimum starting torque due to stiction and geometric effects. Bearing operational performance is further characterized by modeling and measuring stiffness, environmental survivability, and high

  20. Resistive and Capacitive Based Sensing Technologies

    Directory of Open Access Journals (Sweden)

    Winncy Y. Du

    2008-04-01

    Full Text Available Resistive and capacitive (RC sensors are the most commonly used sensors. Their applications span homeland security, industry, environment, space, traffic control, home automation, aviation, and medicine. More than 30% of modern sensors are direct or indirect applications of the RC sensing principles. This paper reviews resistive and capacitive sensing technologies. The physical principles of resistive sensors are governed by several important laws and phenomena such as Ohm’s Law, Wiedemann-Franz Law; Photoconductive-, Piezoresistive-, and Thermoresistive Effects. The applications of these principles are presented through a variety of examples including accelerometers, flame detectors, pressure/flow rate sensors, RTDs, hygristors, chemiresistors, and bio-impedance sensors. The capacitive sensors are described through their three configurations: parallel (flat, cylindrical (coaxial, and spherical (concentric. Each configuration is discussed with respect to its geometric structure, function, and application in various sensor designs. Capacitance sensor arrays are also presented in the paper.

  1. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  2. Complementary surface charge for enhanced capacitive deionization

    NARCIS (Netherlands)

    Gao, X.; Porada, S.; Omosebi, A.; Liu, K.L.; Biesheuvel, P.M.; Landon, J.

    2016-01-01

    Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI

  3. A novel flexible capacitive touch pad based on graphene oxide film

    Science.gov (United States)

    Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

    2013-01-01

    Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch ``ON'' to ``OFF'' voltage ratio up to ~60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

  4. A novel flexible capacitive touch pad based on graphene oxide film.

    Science.gov (United States)

    Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

    2013-02-07

    Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch "ON" to "OFF" voltage ratio up to ∼60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

  5. RF superconductivity at CEBAF

    International Nuclear Information System (INIS)

    1990-01-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) is a 4 GeV continuous beam electron accelerator being constructed to perform nuclear physics research. Construction began in February 1987 and initial operation is scheduled for February 1994. The present report describes its prototyping, problems/solutions, further development, facilities, design status, production and upgrade potential. The accelerator is 1.4 km in circumference, and has a race-track shape. It is of the recirculated linear accelerator type, and employs a total of five passes. Two linacs on opposite sides of the race-track each provide 400 MeV per pass. Beams of various energies are transported by separated arcs at each end of the straight sections to provide the recirculation. There are 4 recirculation arcs at the injector end, and 5 arcs at the other end. The full energy beam is routed by an RF separator to between one and three end stations, as desired, on a bucket-by-bucket basis. The average output beam current is 200 microamperes. Acceleration is provided by 338 superconducting cavities, which are arranged in pairs, each of which is enclosed in a helium vessel and suspended inside a vacuum jacket without ends. (N.K.)

  6. Capacitance and surface of carbons in supercapacitors

    OpenAIRE

    Lobato Ortega, Belén; Suárez Fernández, Loreto; Guardia, Laura; Álvarez Centeno, Teresa

    2017-01-01

    This research is focused in the missing link between the specific surface area of carbons surface and their electrochemical capacitance. Current protocols used for the characterization of carbons applied in supercapacitors electrodes induce inconsistencies in the values of the interfacial capacitance (in F m−2), which is hindering the optimization of supercapacitors. The constraints of both the physisorption of N2 at 77 K and the standard methods used for the isotherm analysis frequently lead...

  7. Development of electrical capacitance sensor for tomography

    International Nuclear Information System (INIS)

    Rasif Mohd Zain; Jaafar Abdullah; Ismail Mustapha; Sazrol Azizee Ariff; Susan Maria Sipaun; Lojius Lombigit

    2004-01-01

    Electrical capacitance tomography (ECT) is one of the successful methods for imaging 2-phase liquid/gas mixture in oil pipelines and solids/gas mixture in fluidized bed and pneumatic conveying system for improvement of process plants. This paper presents the design development of an electrical capacitance sensor for use with an ECT system. This project is aimed at developing a demonstration ECT unit to be used in the oil pipe line. (Author)

  8. Automatic Power Factor Correction Using Capacitive Bank

    OpenAIRE

    Mr.Anant Kumar Tiwari,; Mrs. Durga Sharma

    2014-01-01

    The power factor correction of electrical loads is a problem common to all industrial companies. Earlier the power factor correction was done by adjusting the capacitive bank manually [1]. The automated power factor corrector (APFC) using capacitive load bank is helpful in providing the power factor correction. Proposed automated project involves measuring the power factor value from the load using microcontroller. The design of this auto-adjustable power factor correction is ...

  9. Analog/RF performance of four different Tunneling FETs with the recessed channels

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng

    2016-12-01

    In this paper, the performance comparisons of analog and radio frequency (RF) in the four different tunneling field effect transistors (TFETs) with the recessed channels are performed. The L-shaped channel TFET (LTFET), U-shaped channel TFET (UTFET), U-shaped channel with L-shaped gate TFET (LGUTFET) and U-shaped channel with dual sources TFET (DUTFET) are investigated by using Silvaco-Atalas simulation tool. The transconductance (gm), output conductance (gds), gate capacitance (Cgg), cut-off frequency (fT) and gain bandwidth product (GBW) are the parameters by analyzed. Among all the considered devices, the DUTFET has the maximum gm and gds due to the improved on-state current by dual sources, and the LTFET has the minimum Cgg because of the minimum gate-to-drain capacitance (Cgd). Since analog/RF characteristics of a device are proportional to gm and inversely proportional to Cgg, the LTFET and DUTFET have better analog/RF performance compared to the UTFET and LGUTFET. The extracted largest fT is 3.02 GHz in the LTFET and the largest GBW is 1.02 GHz in the DUTFET. The simulation results in this paper can be used as a reference to choose the TFET among these four TFETs for analog/RF applications.

  10. An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Yu-Chun Liu

    2015-08-01

    Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

  11. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  12. CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

    Science.gov (United States)

    Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

    2015-12-01

    CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

  13. Test results of the Los Alamos ferrite-tuned rf cavity

    International Nuclear Information System (INIS)

    Friedrichs, C.C.; Spalek, G.; Carlini, R.D.; Smythe, W.R.

    1987-03-01

    An rf accelerating cavity appropriate for use in a 20% frequency bandwidth synchrotron has been designed, fabricated, and is now being tested at Los Alamos. The cavity-amplifier system was designed to produce a peak rf gap voltage of 90 kV over the range from 50 to 60 MHz. Special features of the system are the transversely biased ferrite tuner, capacitive coupling of the amplifier to the cavity, and a 15-cm beam pipe. High-power rf testing of the cavity-amplifier system started in August 1986, using an adjustable dc power supply to bias the ferrite. This paper describes the cavity-amplifier circuit and the test results to the present time. Future plans are also discussed

  14. Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program

    Energy Technology Data Exchange (ETDEWEB)

    Schriner, H.; Davies, B.; Sniegowski, J.; Rodgers, M.S.; Allen, J.; Shepard, C.

    1998-05-01

    Research and development in the design and manufacture of Microelectromechanical Systems (MEMS) is growing at an enormous rate. Advances in MEMS design tools and fabrication processes at Sandia National Laboratories` Microelectronics Development Laboratory (MDL) have broadened the scope of MEMS applications that can be designed and manufactured for both military and commercial use. As improvements in micromachining fabrication technologies continue to be made, MEMS designs can become more complex, thus opening the door to an even broader set of MEMS applications. In an effort to further research and development in MEMS design, fabrication, and application, Sandia National Laboratories has launched the Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program or SAMPLES program. The SAMPLES program offers potential partners interested in MEMS the opportunity to prototype an idea and produce hardware that can be used to sell a concept. The SAMPLES program provides education and training on Sandia`s design tools, analysis tools and fabrication process. New designers can participate in the SAMPLES program and design MEMS devices using Sandia`s design and analysis tools. As part of the SAMPLES program, participants` designs are fabricated using Sandia`s 4 level polycrystalline silicon surface micromachine technology fabrication process known as SUMMiT (Sandia Ultra-planar, Multi-level MEMS Technology). Furthermore, SAMPLES participants can also opt to obtain state of the art, post-fabrication services provided at Sandia such as release, packaging, reliability characterization, and failure analysis. This paper discusses the components of the SAMPLES program.

  15. Simple fall criteria for MEMS sensors: Data analysis and sensor concept

    KAUST Repository

    Ibrahim, Alwathiqbellah; Younis, Mohammad I.

    2014-01-01

    This paper presents a new and simple fall detection concept based on detailed experimental data of human falling and the activities of daily living (ADLs). Establishing appropriate fall algorithms compatible with MEMS sensors requires detailed data on falls and ADLs that indicate clearly the variations of the kinematics at the possible sensor node location on the human body, such as hip, head, and chest. Currently, there is a lack of data on the exact direction and magnitude of each acceleration component associated with these node locations. This is crucial for MEMS structures, which have inertia elements very close to the substrate and are capacitively biased, and hence, are very sensitive to the direction of motion whether it is toward or away from the substrate. This work presents detailed data of the acceleration components on various locations on the human body during various kinds of falls and ADLs. A two-degree-of-freedom model is used to help interpret the experimental data. An algorithm for fall detection based on MEMS switches is then established. A new sensing concept based on the algorithm is proposed. The concept is based on employing several inertia sensors, which are triggered simultaneously, as electrical switches connected in series, upon receiving a true fall signal. In the case of everyday life activities, some or no switches will be triggered resulting in an open circuit configuration, thereby preventing false positive. Lumped-parameter model is presented for the device and preliminary simulation results are presented illustrating the new device concept. © 2014 by the authors; licensee MDPI, Basel, Switzerland.

  16. Simple fall criteria for MEMS sensors: Data analysis and sensor concept

    KAUST Repository

    Ibrahim, Alwathiqbellah

    2014-07-08

    This paper presents a new and simple fall detection concept based on detailed experimental data of human falling and the activities of daily living (ADLs). Establishing appropriate fall algorithms compatible with MEMS sensors requires detailed data on falls and ADLs that indicate clearly the variations of the kinematics at the possible sensor node location on the human body, such as hip, head, and chest. Currently, there is a lack of data on the exact direction and magnitude of each acceleration component associated with these node locations. This is crucial for MEMS structures, which have inertia elements very close to the substrate and are capacitively biased, and hence, are very sensitive to the direction of motion whether it is toward or away from the substrate. This work presents detailed data of the acceleration components on various locations on the human body during various kinds of falls and ADLs. A two-degree-of-freedom model is used to help interpret the experimental data. An algorithm for fall detection based on MEMS switches is then established. A new sensing concept based on the algorithm is proposed. The concept is based on employing several inertia sensors, which are triggered simultaneously, as electrical switches connected in series, upon receiving a true fall signal. In the case of everyday life activities, some or no switches will be triggered resulting in an open circuit configuration, thereby preventing false positive. Lumped-parameter model is presented for the device and preliminary simulation results are presented illustrating the new device concept. © 2014 by the authors; licensee MDPI, Basel, Switzerland.

  17. Analytical–numerical global model of atmospheric-pressure radio-frequency capacitive discharges

    International Nuclear Information System (INIS)

    Lazzaroni, C; Chabert, P; Lieberman, M A; Lichtenberg, A J; Leblanc, A

    2012-01-01

    A one-dimensional hybrid analytical–numerical global model of atmospheric-pressure, radio-frequency (rf) driven capacitive discharges is developed. The feed gas is assumed to be helium with small admixtures of oxygen or nitrogen. The electrical characteristics are modeled analytically as a current-driven homogeneous discharge. The electron power balance is solved analytically to determine a time-varying Maxwellian electron temperature, which oscillates on the rf timescale. Averaging over the rf period yields effective rate coefficients for gas phase activated processes. The particle balance relations for all species are then integrated numerically to determine the equilibrium discharge parameters. The coupling of analytical solutions of the time-varying discharge and electron temperature dynamics, and numerical solutions of the discharge chemistry, allows for a fast solution of the discharge equilibrium. Variations of discharge parameters with discharge composition and rf power are determined. Comparisons are made to more accurate but numerically costly fluid models, with space and time variations, but with the range of parameters limited by computational time. (paper)

  18. Modeling and Analysis of a Closed-Loop System for High-Q MEMS Accelerometer Sensor

    Directory of Open Access Journals (Sweden)

    Wang Yalin

    2018-01-01

    Full Text Available High-Q sensing element is desirable for high performance while makes the loop control a great challenge. This paper presents a closed-loop system for high-Q capacitive MEMS accelerometer which has achieved loop control effectively. The proportional-derivative(PDcontrol is developed in the system to improve the system stability. In addition, pulse width modulation (PWM electrostatic force feedback is designed in the loop to overcome the nonlinearity. Furthermore, a sigma-delta (ΣΔ modulator with noise shaping is built to realize digital output. System model is built in Matlab/Simulink. The simulation results indicate that equivalent Q value is reduced to 1.5 to ensure stability and responsiveness of the system. The effective number of bits of system output is 14.7 bits. The system nonlinearity is less than 5‰. The equivalent linear model including main noise factors is built, and then a complete theory of noise and linearity analysis is established to contribute to common MEMS accelerometer research.

  19. Water cooling of RF structures

    International Nuclear Information System (INIS)

    Battersby, G.; Zach, M.

    1994-06-01

    We present computer codes for heat transfer in water cooled rf cavities. RF parameters obtained by SUPERFISH or analytically are operated on by a set of codes using PLOTDATA, a command-driven program developed and distributed by TRIUMF [1]. Emphasis is on practical solutions with designer's interactive input during the computations. Results presented in summary printouts and graphs include the temperature, flow, and pressure data. (authors). 4 refs., 4 figs

  20. Unbalanced field RF electron gun

    Science.gov (United States)

    Hofler, Alicia

    2013-11-12

    A design for an RF electron gun having a gun cavity utilizing an unbalanced electric field arrangement. Essentially, the electric field in the first (partial) cell has higher field strength than the electric field in the second (full) cell of the electron gun. The accompanying method discloses the use of the unbalanced field arrangement in the operation of an RF electron gun in order to accelerate an electron beam.

  1. Sheath heating in low-pressure capacitive radio frequency discharges

    International Nuclear Information System (INIS)

    Wood, B.P.

    1991-01-01

    Capacitively coupled, parallel plate, r.f. discharges are commonly used for materials processing. The electrons in such a discharge gain and lose energy by reflection from the oscillating sheaths which form at the electrodes. Previous models of the electron heating by this mechanism have assumed that the sheath motion is slow compared to the electron thermal velocity, so that the electron energy change from each reflection is small. Here, the heating rate, density, and sheath width relations are derived analytically in the limit of very fast sheath motion. Numerical results are presented spanning the slow and fast limits. Results from particle-in-cell simulations show that in the large-energy-change regime, an electron beam is produced on each sheath expansion. At low pressure, this beam can traverse the plasma and interact with the sheath at the opposite electrode, producing a beam energy and density dependence on the length of the discharge. The beam produces a time and space varying warm tail on the electron energy distribution. Two revised heating models are derived, assuming power-law and two-temperature electron energy distributions, with temporal variation in electron temperature. These revised models yield new predictions for the variation of the power, density, and sheath thickness with applied r.f. voltage. These predictions are compared with simulation results and laboratory experiment. The electron sheath motion is investigated experimentally by observing the signal on a floating probe in the sheath region. This is compared to the signal product by a non-linear circuit model which accounts for the perturbation of the sheath potential by the probe and includes various forms of sheath motion. The experimental observations are consistent with the analytical predictions. Experimental observations of plasma-sheath resonance oscillations are presented which agree with analytical predictions

  2. RF MEMS capacitors and Variable Capacitors – The Future of Wireless Communication

    KAUST Repository

    Elshurafa, Amro M.

    2014-07-15

    The most recent 4G devices are designed with specific emphasis on the data traffic challenge. Because there is an increasing number of bands, all the circuits and devices related to the design of wireless systems need to be enhanced including the power am

  3. Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

    KAUST Repository

    Elshurafa, Amro M.; Ho, P.H.; Salama, Khaled N.

    2013-01-01

    capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement

  4. Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

    Science.gov (United States)

    2009-09-01

    mechanically cycled by a piezo - electric transducer (PZT). The resistance through the simulated switch was measured using a four-wire measurement technique...determined that the microwave performance of a closed relay can be modeled as a simple resistor to a first order equivalent [106,108]. The relay resistance is...Therefore, a piezo device capable of precise higher frequency motion was chosen to provide cyclic contact motion. This device needed to be physically small

  5. RF MEMS capacitors and Variable Capacitors – The Future of Wireless Communication

    KAUST Repository

    Elshurafa, Amro M.; Salama, Khaled N.

    2014-01-01

    The most recent 4G devices are designed with specific emphasis on the data traffic challenge. Because there is an increasing number of bands, all the circuits and devices related to the design of wireless systems need to be enhanced including the power am

  6. Hybrid Wafer-Level Packaging for RF-MEMS and Optoelectronic Applications

    NARCIS (Netherlands)

    Tian, J.

    2013-01-01

    The current trend in electronic packaging research is to integrate more functions into one package, reduce electrical path parasitic, and increase the heat conduction in order to make the final packaged system smaller, more reliable, more functional and more complete, while keeping the packaging

  7. Low Voltage, High-Q SOI MEMS Varactors for RF Applications

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Jensen, Søren; Hansen, Ole

    2003-01-01

    A micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and high electrical quality factor is presented with detailed characterizations. A 50μm thick single-crystalline silicon layer was etched using deep reactive ion etching (DRIE) for obtaining high-aspect ra...... is a suitable passive component to be used in band-pass filtering, voltage controlled oscillator or impedance matching applications on the very high frequency(VHF) and ultra high frequency (UHF) bands....

  8. Structure and trapping of three-dimensional dust clouds in a capacitively coupled rf-discharge

    International Nuclear Information System (INIS)

    Arp, O.; Block, D.; Piel, A.

    2005-01-01

    In this survey the recently found 'Coulomb balls' are discussed, which show an unusual kind of crystalline order. These three-dimensional dust clouds consisting of hundreds or thousands of micrometer-sized dust particles have a spherical shape and exist in a wide range of plasma conditions. Coulomb balls are optically highly transparent and have macroscopic dimensions of several millimeters in diameter. The clouds allow for the observation of each single particle and thus the complete reconstruction of the crystal structure by means of video microscopy techniques. The particles are arranged in distinct nested shells in which they form patterns with mostly five and six neighbors. The confinement of Coulomb balls by dielectric walls involves electric forces, surface charges, ion drag forces, and thermophoretic levitation. The thermophoretic force field is measured with tracer particles and particle image velocimetry (PIV). The electric forces are derived from simulations with the two-dimensional SIGLO-2D code. It is shown the the sum of all confining forces results in a stable potential well that describes levitation and spherical confinement of the Coulomb ball

  9. MEMS for Tunable Photonic Metamaterial Applications

    Science.gov (United States)

    Stark, Thomas

    Photonic metamaterials are materials whose optical properties are derived from artificially-structured sub-wavelength unit cells, rather than from the bulk properties of the constituent materials. Examples of metamaterials include plasmonic materials, negative index materials, and electromagnetic cloaks. While advances in simulation tools and nanofabrication methods have allowed this field to grow over the past several decades, many challenges still exist. This thesis addresses two of these challenges: fabrication of photonic metamaterials with tunable responses and high-throughput nanofabrication methods for these materials. The design, fabrication, and optical characterization of a microelectromechanical systems (MEMS) tunable plasmonic spectrometer are presented. An array of holes in a gold film, with plasmon resonance in the mid-infrared, is suspended above a gold reflector, forming a Fabry-Perot interferometer of tunable length. The spectra exhibit the convolution of extraordinary optical transmission through the holes and Fabry-Perot resonances. Using MEMS, the interferometer length is modulated from 1.7 mum to 21.67 mum , thereby tuning the free spectral range from about 2900 wavenumbers to 230.7 wavenumbers and shifting the reflection minima and maxima across the infrared. Due to its broad spectral tunability in the fingerprint region of the mid-infrared, this device shows promise as a tunable biological sensing device. To address the issue of high-throughput, high-resolution fabrication of optical metamaterials, atomic calligraphy, a MEMS-based dynamic stencil lithography technique for resist-free fabrication of photonic metamaterials on unconventional substrates, has been developed. The MEMS consists of a moveable stencil, which can be actuated with nanometer precision using electrostatic comb drive actuators. A fabrication method and flip chip method have been developed, enabling evaporation of metals through the device handle for fabrication on an

  10. Construction and Initial Validation of the Multiracial Experiences Measure (MEM)

    Science.gov (United States)

    Yoo, Hyung Chol; Jackson, Kelly; Guevarra, Rudy P.; Miller, Matthew J.; Harrington, Blair

    2015-01-01

    This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across two studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one’s social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. PMID:26460977

  11. Carbon flow electrodes for continuous operation of capacitive deionization and capacitive mixing energy generation

    NARCIS (Netherlands)

    Porada, S.; Hamelers, H.V.M.; Bryjak, M.; Presser, V.; Biesheuvel, P.M.; Weingarth, D.

    2014-01-01

    Capacitive technologies, such as capacitive deionization and energy harvesting based on mixing energy (“capmix” and “CO2 energy”), are characterized by intermittent operation: phases of ion electrosorption from the water are followed by system regeneration. From a system application point of view,

  12. Microtechnology management considering test and cost aspects for stacked 3D ICs with MEMS

    Science.gov (United States)

    Hahn, K.; Wahl, M.; Busch, R.; Grünewald, A.; Brück, R.

    2018-01-01

    Innovative automotive systems require complex semiconductor devices currently only available in consumer grade quality. The European project TRACE will develop and demonstrate methods, processes, and tools to facilitate usage of Consumer Electronics (CE) components to be deployable more rapidly in the life-critical automotive domain. Consumer electronics increasingly use heterogeneous system integration methods and "More than Moore" technologies, which are capable to combine different circuit domains (Analog, Digital, RF, MEMS) and which are integrated within SiP or 3D stacks. Making these technologies or at least some of the process steps available under automotive electronics requirements is an important goal to keep pace with the growing demand for information processing within cars. The approach presented in this paper aims at a technology management and recommendation system that covers technology data, functional and non-functional constraints, and application scenarios, and that will comprehend test planning and cost consideration capabilities.

  13. Optical fibre angle sensor used in MEMS

    International Nuclear Information System (INIS)

    Golebiowski, J; Milcarz, Sz; Rybak, M

    2014-01-01

    There is a need for displacement and angle measurements in many movable MEMS structures. The use of fibre optical sensors helps to measure micrometre displacements and small rotation angles. Advantages of this type of transducers are their simple design, high precision of processing, low costs and ability of a non-contact measurement. The study shows an analysis of a fibre-optic intensity sensor used for MEMS movable structure rotation angle measurement. An intensity of the light in the photodetector is basically dependent on a distance between a reflecting surface and a head surface of the fibre transmitting arm, and the deflection angle. Experimental tests were made for PMMA 980/1000 plastic fibres, Θ NA =33°. The study shows both analytical and practical results. It proves that calculated and experimental characteristics for the analysed transducers are similar.

  14. Giant piezoelectricity on Si for hyperactive MEMS.

    Science.gov (United States)

    Baek, S H; Park, J; Kim, D M; Aksyuk, V A; Das, R R; Bu, S D; Felker, D A; Lettieri, J; Vaithyanathan, V; Bharadwaja, S S N; Bassiri-Gharb, N; Chen, Y B; Sun, H P; Folkman, C M; Jang, H W; Kreft, D J; Streiffer, S K; Ramesh, R; Pan, X Q; Trolier-McKinstry, S; Schlom, D G; Rzchowski, M S; Blick, R H; Eom, C B

    2011-11-18

    Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO(3) template layer with superior piezoelectric coefficients (e(31,f) = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

  15. Active mems microbeam device for gas detection

    KAUST Repository

    Bouchaala, Adam M.

    2017-10-05

    Sensors and active switches for applications in gas detection and other fields are described. The devices are based on the softening and hardening nonlinear response behaviors of microelectromechanical systems (MEMS) clamped-clamped microbeams. In that context, embodiments of gas-triggered MEMS microbeam sensors and switches are described. The microbeam devices can be coated with a Metal-Organic Framework to achieve high sensitivity. For gas sensing, an amplitude-based tracking algorithm can be used to quantify an amount of gas captured by the devices according to frequency shift. Noise analysis is also conducted according to the embodiments, which shows that the microbeam devices have high stability against thermal noise. The microbeam devices are also suitable for the generation of binary sensing information for alarming, for example.

  16. MEMS Gyroscopes Based on Acoustic Sagnac Effect

    Directory of Open Access Journals (Sweden)

    Yuanyuan Yu

    2016-12-01

    Full Text Available This paper reports on the design, fabrication and preliminary test results of a novel microelectromechanical systems (MEMS device—the acoustic gyroscope. The unique operating mechanism is based on the “acoustic version” of the Sagnac effect in fiber-optic gyros. The device measures the phase difference between two sound waves traveling in opposite directions, and correlates the signal to the angular velocity of the hosting frame. As sound travels significantly slower than light and develops a larger phase change within the same path length, the acoustic gyro can potentially outperform fiber-optic gyros in sensitivity and form factor. It also promises superior stability compared to vibratory MEMS gyros as the design contains no moving parts and is largely insensitive to mechanical stress or temperature. We have carried out systematic simulations and experiments, and developed a series of processes and design rules to implement the device.

  17. Quantitative Accelerated Life Testing of MEMS Accelerometers.

    Science.gov (United States)

    Bâzu, Marius; Gălăţeanu, Lucian; Ilian, Virgil Emil; Loicq, Jerome; Habraken, Serge; Collette, Jean-Paul

    2007-11-20

    Quantitative Accelerated Life Testing (QALT) is a solution for assessing thereliability of Micro Electro Mechanical Systems (MEMS). A procedure for QALT is shownin this paper and an attempt to assess the reliability level for a batch of MEMSaccelerometers is reported. The testing plan is application-driven and contains combinedtests: thermal (high temperature) and mechanical stress. Two variants of mechanical stressare used: vibration (at a fixed frequency) and tilting. Original equipment for testing at tiltingand high temperature is used. Tilting is appropriate as application-driven stress, because thetilt movement is a natural environment for devices used for automotive and aerospaceapplications. Also, tilting is used by MEMS accelerometers for anti-theft systems. The testresults demonstrated the excellent reliability of the studied devices, the failure rate in the"worst case" being smaller than 10 -7 h -1 .

  18. Melancolia, memória e subjetividade

    OpenAIRE

    Giele Rocha Dorneles

    2015-01-01

    A proposta desta tese é estabelecer, através de uma perspectiva comparatista, relações entre três temas articuladores: a melancolia, a memória e a subjetividade, de modo a constituir entrelaçamentos possíveis, além de buscar indicar o modo como essas três temáticas são apresentadas e representadas em diferentes formas de expressão das artes, partindo de obras literárias - como “A maior flor do mundo” e “As pequenas memórias”, entre outras de José Saramago, e de autores como Charles Baudelaire...

  19. On the Stiction of MEMS Materials

    DEFF Research Database (Denmark)

    Zhuang, Yanxin; Menon, Aric Kumaran

    2005-01-01

    energies and stiction of commonly used MEMS materials by contact angle measurements and atomic force microscopy (AFM). Dispersive and polar components of surface energies are calculated by Owens-Wendt-Rabel-Kaelble method. Silicon and silicon-related materials have higher polar surface energies than SU-8...... been shown that the materials with higher surface energy have higher sticton/adhesion forces. The topography of surface influences the contact angle and stiction, and is also discussed in the paper....

  20. Characterization of Piezoelectric Energy Harvesting MEMS

    Science.gov (United States)

    2015-12-01

    of previously fabricated MEMS piezoelectric energy harvesters and use the results to optimize an advanced finite element model to be used in...possibilities of using solar power and the piezoelectric effect to harvest energy [12]. The design goal was to develop an energy harvester with a resonant... The piezoelectric properties of AlN are also relatively constant over a wide range of temperatures [7]. AlN was further characterized

  1. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  2. Movable MEMS Devices on Flexible Silicon

    KAUST Repository

    Ahmed, Sally

    2013-05-05

    Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

  3. Review on the Modeling of Electrostatic MEMS

    Directory of Open Access Journals (Sweden)

    Wan-Chun Chuang

    2010-06-01

    Full Text Available Electrostatic-driven microelectromechanical systems devices, in most cases, consist of couplings of such energy domains as electromechanics, optical electricity, thermoelectricity, and electromagnetism. Their nonlinear working state makes their analysis complex and complicated. This article introduces the physical model of pull-in voltage, dynamic characteristic analysis, air damping effect, reliability, numerical modeling method, and application of electrostatic-driven MEMS devices.

  4. Ultra-compact MEMS FTIR spectrometer

    Science.gov (United States)

    Sabry, Yasser M.; Hassan, Khaled; Anwar, Momen; Alharon, Mohamed H.; Medhat, Mostafa; Adib, George A.; Dumont, Rich; Saadany, Bassam; Khalil, Diaa

    2017-05-01

    Portable and handheld spectrometers are being developed and commercialized in the late few years leveraging the rapidly-progressing technology and triggering new markets in the field of on-site spectroscopic analysis. Although handheld devices were commercialized for the near-infrared spectroscopy (NIRS), their size and cost stand as an obstacle against the deployment of the spectrometer as spectral sensing components needed for the smart phone industry and the IoT applications. In this work we report a chip-sized microelectromechanical system (MEMS)-based FTIR spectrometer. The core optical engine of the solution is built using a passive-alignment integration technique for a selfaligned MEMS chip; self-aligned microoptics and a single detector in a tiny package sized about 1 cm3. The MEMS chip is a monolithic, high-throughput scanning Michelson interferometer fabricated using deep reactive ion etching technology of silicon-on-insulator substrate. The micro-optical part is used for conditioning the input/output light to/from the MEMS and for further light direction to the detector. Thanks to the all-reflective design of the conditioning microoptics, the performance is free of chromatic aberration. Complemented by the excellent transmission properties of the silicon in the infrared region, the integrated solution allows very wide spectral range of operation. The reported sensor's spectral resolution is about 33 cm-1 and working in the range of 1270 nm to 2700 nm; upper limited by the extended InGaAs detector. The presented solution provides a low cost, low power, tiny size, wide wavelength range NIR spectral sensor that can be manufactured with extremely high volumes. All these features promise the compatibility of this technology with the forthcoming demand of smart portable and IoT devices.

  5. Different grades MEMS accelerometers error characteristics

    Science.gov (United States)

    Pachwicewicz, M.; Weremczuk, J.

    2017-08-01

    The paper presents calibration effects of two different MEMS accelerometers of different price and quality grades and discusses different accelerometers errors types. The calibration for error determining is provided by reference centrifugal measurements. The design and measurement errors of the centrifuge are discussed as well. It is shown that error characteristics of the sensors are very different and it is not possible to use simple calibration methods presented in the literature in both cases.

  6. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  7. MEMS- and NEMS-based complex adaptive smart devices and systems

    Science.gov (United States)

    Varadan, Vijay K.

    2001-10-01

    The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with feature sizes now down at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic and micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nanotubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems.

  8. Design of a multi-axis implantable MEMS sensor for intraosseous bone stress monitoring

    International Nuclear Information System (INIS)

    Alfaro, Fernando; Weiss, Lee; Campbell, Phil; Fedder, Gary K; Miller, Mark

    2009-01-01

    The capability to assess the biomechanical properties of living bone is important for basic research as well as the clinical management of skeletal trauma and disease. Even though radiodensitometric imaging is commonly used to infer bone quality, bone strength does not necessarily correlate well with these non-invasive measurements. This paper reports on the design, fabrication and initial testing of an implantable ultra-miniature multi-axis sensor for directly measuring bone stresses at a micro-scale. The device, which is fabricated with CMOS-MEMS processes, is intended to be permanently implanted within open fractures, or embedded in bone grafts, or placed on implants at the interfaces between bone and prosthetics. The stress sensor comprises an array of piezoresistive pixels to detect a stress tensor at the interfacial area between the MEMS chip and bone, with a resolution to 100 Pa, in 1 s averaging. The sensor system design and manufacture is also compatible with the integration of wireless RF telemetry, for power and data retrieval, all within a 3 mm × 3 mm × 0.3 mm footprint. The piezoresistive elements are integrated within a textured surface to enhance sensor integration with bone. Finite element analysis led to a sensor design for normal and shear stress detection. A wired sensor was fabricated in the Jazz 0.35 µm BiCMOS process and then embedded in mock bone material to characterize its response to tensile and bending loads up to 250 kPa

  9. A nuclear micro battery for Mems devices

    International Nuclear Information System (INIS)

    Lal, A.; Bilbao Y Leon, R.M.; Guo, H.; Li, H.; Santanam, S.; Yao, R.; Blanchard, J.; Henderson, D.

    2001-01-01

    Micro-electromechanical Systems (MEMS) have not gained wide use because they lack the on-device power required by many important applications. Several forms of energy could be considered to supply this needed power (solar, fossil fuels, etc), but nuclear sources provide an intriguing option in terms of power density and lifetime. This paper describes several approaches for establishing the viability of nuclear sources for powering realistic MEMS devices. Isotopes currently being used include alpha and low-energy beta emitters. The sources are in both solid and liquid form, and a technique for plating a solid source from a liquid source has been investigated. Several approaches are being explored for the production of MEMS power sources. The first concept is a junction-type battery. The second concept involves a more direct use of the charged particles produced by the decay: the creation of a resonator by inducing movement due to attraction or repulsion resulting from the collection of charged particles. Performance results are provided for each of these concepts. (authors)

  10. Heterogeneous MEMS device assembly and integration

    Science.gov (United States)

    Topart, Patrice; Picard, Francis; Ilias, Samir; Alain, Christine; Chevalier, Claude; Fisette, Bruno; Paultre, Jacques E.; Généreux, Francis; Legros, Mathieu; Lepage, Jean-François; Laverdière, Christian; Ngo Phong, Linh; Caron, Jean-Sol; Desroches, Yan

    2014-03-01

    In recent years, smart phone applications have both raised the pressure for cost and time to market reduction, and the need for high performance MEMS devices. This trend has led the MEMS community to develop multi-die packaging of different functionalities or multi-technology (i.e. wafer) approaches to fabricate and assemble devices respectively. This paper reports on the fabrication, assembly and packaging at INO of various MEMS devices using heterogeneous assembly at chip and package-level. First, the performance of a giant (e.g. about 3 mm in diameter), electrostatically actuated beam steering mirror is presented. It can be rotated about two perpendicular axes to steer an optical beam within an angular cone of up to 60° in vector scan mode with an angular resolution of 1 mrad and a response time of 300 ms. To achieve such angular performance relative to mirror size, the microassembly was performed from sub-components fabricated from 4 different wafers. To combine infrared detection with inertial sensing, an electroplated proof mass was flip-chipped onto a 256×1 pixel uncooled bolometric FPA and released using laser ablation. In addition to the microassembly technology, performance results of packaged devices are presented. Finally, to simulate a 3072×3 pixel uncooled detector for cloud and fire imaging in mid and long-wave IR, the staggered assembly of six 512×3 pixel FPAs with a less than 50 micron pixel co-registration is reported.

  11. MEMS Micro-Valve for Space Applications

    Science.gov (United States)

    Chakraborty, I.; Tang, W. C.; Bame, D. P.; Tang, T. K.

    1998-01-01

    We report on the development of a Micro-ElectroMechanical Systems (MEMS) valve that is designed to meet the rigorous performance requirements for a variety of space applications, such as micropropulsion, in-situ chemical analysis of other planets, or micro-fluidics experiments in micro-gravity. These systems often require very small yet reliable silicon valves with extremely low leak rates and long shelf lives. Also, they must survive the perils of space travel, which include unstoppable radiation, monumental shock and vibration forces, as well as extreme variations in temperature. Currently, no commercial MEMS valve meets these requirements. We at JPL are developing a piezoelectric MEMS valve that attempts to address the unique problem of space. We begin with proven configurations that may seem familiar. However, we have implemented some major design innovations that should produce a superior valve. The JPL micro-valve is expected to have an extremely low leak rate, limited susceptibility to particulates, vibration or radiation, as well as a wide operational temperature range.

  12. A MEMS sensor for microscale force measurements

    International Nuclear Information System (INIS)

    Majcherek, S; Aman, A; Fochtmann, J

    2016-01-01

    This paper describes the development and testing of a new MEMS-based sensor device for microscale contact force measurements. A special MEMS cell was developed to reach higher lateral resolution than common steel-based load cells with foil-type strain gauges as mechanical-electrical converters. The design provided more than one normal force measurement point with spatial resolution in submillimeter range. Specific geometric adaption of the MEMS-device allowed adjustability of its measurement range between 0.5 and 5 N. The thin film nickel-chromium piezo resistors were used to achieve a mechanical-electrical conversion. The production process was realized by established silicon processing technologies such as deep reactive ion etching and vapor deposition (sputtering). The sensor was tested in two steps. Firstly, the sensor characteristics were carried out by application of defined loads at the measurement points by a push-pull tester. As a result, the sensor showed linear behavior. A measurement system analysis (MSA1) was performed to define the reliability of the measurement system. The measured force values had the maximal relative deviation of 1% to average value of 1.97 N. Secondly, the sensor was tested under near-industrial conditions. In this context, the thermal induced relaxation behavior of the electrical connector contact springs was investigated. The handling of emerging problems during the characterization process of the sensor is also described. (paper)

  13. Radioisotope Power Sources for MEMS Devices,

    International Nuclear Information System (INIS)

    Blanchard, J.P.

    2001-01-01

    Microelectromechanical systems (MEMS) comprise a rapidly expanding research field with potential applications varying from sensors in airbags to more recent optical applications. Depending on the application, these devices often require an on-board power source for remote operation, especially in cases requiring operation for an extended period of time. Previously suggested power sources include fossil fuels and solar energy, but nuclear power sources may provide significant advantages for certain applications. Hence, the objective of this study is to establish the viability of using radioisotopes to power realistic MEMS devices. A junction-type battery was constructed using silicon and a 63 Ni liquid source. A source volume containing 64 microCi provided a power of ∼0.07 nW. A more novel application of nuclear sources for MEMS applications involves the creation of a resonator that is driven by charge collection in a cantilever beam. Preliminary results have established the feasibility of this concept, and future work will optimize the design for various applications

  14. Additive manufacturing of RF absorbers

    Science.gov (United States)

    Mills, Matthew S.

    The ability of additive manufacturing techniques to fabricate integrated electromagnetic absorbers tuned for specific radio frequency bands within structural composites allows for unique combinations of mechanical and electromagnetic properties. These composites and films can be used for RF shielding of sensitive electromagnetic components through in-plane and out-of-plane RF absorption. Structural composites are a common building block of many commercial platforms. These platforms may be placed in situations in which there is a need for embedded RF absorbing properties along with structural properties. Instead of adding radar absorbing treatments to the external surface of existing structures, which adds increased size, weight and cost; it could prove to be advantageous to integrate the microwave absorbing properties directly into the composite during the fabrication process. In this thesis, a method based on additive manufacturing techniques of composites structures with prescribed electromagnetic loss, within the frequency range 1 to 26GHz, is presented. This method utilizes screen printing and nScrypt micro dispensing to pattern a carbon based ink onto low loss substrates. The materials chosen for this study will be presented, and the fabrication technique that these materials went through to create RF absorbing structures will be described. The calibration methods used, the modeling of the RF structures, and the applications in which this technology can be utilized will also be presented.

  15. RF Group Annual Report 2011

    CERN Document Server

    Angoletta, M E; Betz, M; Brunner, O; Baudrenghien, P; Calaga, R; Caspers, F; Ciapala, E; Chambrillon, J; Damerau, H; Doebert, S; Federmann, S; Findlay, A; Gerigk, F; Hancock, S; Höfle, W; Jensen, E; Junginger, T; Liao, K; McMonagle, G; Montesinos, E; Mastoridis, T; Paoluzzi, M; Riddone, G; Rossi, C; Schirm, K; Schwerg, N; Shaposhnikova, E; Syratchev, I; Valuch, D; Venturini Delsolaro, W; Völlinger, C; Vretenar, M; Wuensch, W

    2012-01-01

    The highest priority for the RF group in 2011 was to contribute to a successful physics run of the LHC. This comprises operation of the superconducting 400 MHz accelerating system (ACS) and the transverse damper (ADT) of the LHC itself, but also all the individual links of the injector chain upstream of the LHC – Linac2, the PSB, the PS and the SPS – don’t forget that it is RF in all these accelerators that truly accelerates! A large variety of RF systems had to operate reliably, often near their limit. New tricks had to be found and implemented to go beyond limits; not to forget the equally demanding operation with Pb ions using in addition Linac3 and LEIR. But also other physics users required the full attention of the RF group: CNGS required in 2011 beams with very short, intense bunches, AD required reliable deceleration and cooling of anti-protons, Isolde the post-acceleration of radioactive isotopes in Rex, just to name a few. In addition to the supply of beams for physics, the RF group has a num...

  16. Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

    Science.gov (United States)

    Zhang, Ping

    Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy

  17. Rf system specifications for a linear accelerator

    International Nuclear Information System (INIS)

    Young, A.; Eaton, L.E.

    1992-01-01

    A linear accelerator contains many systems; however, the most complex and costly is the RF system. The goal of an RF system is usually simply stated as maintaining the phase and amplitude of the RF signal within a given tolerance to accelerate the charged particle beam. An RF system that drives a linear accelerator needs a complete system specification, which should contain specifications for all the subsystems (i.e., high-power RF, low-level RF, RF generation/distribution, and automation control). This paper defines a format for the specifications of these subsystems and discusses each RF subsystem independently to provide a comprehensive understanding of the function of each subsystem. This paper concludes with an example of a specification spreadsheet allowing one to input the specifications of a subsystem. Thus, some fundamental parameters (i.e., the cost and size) of the RF system can be determined

  18. PREFACE: 14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2014)

    Science.gov (United States)

    2014-11-01

    It is our great pleasure to welcome you to the 14th International Conference on Micro- and Nano-Technology for Power Generation and Energy Conversion Applications, or PowerMEMS 2014, in Awaji Island, Japan. The aim of PowerMEM is to present the latest research results in the field of miniature, micro- and nano-scale technologies for power generation and energy conversion. The conference will also- give us the opportunity to exchange informations and new ideas in the field of Power MEMS/NEMS. The current status of the field of PowerMEMS spans the full spectrum from basic research to practical applications. We will enjoy valuable discussions not only from the viewpoint of academia but from commercial and industrial perspectives. In the conference, three invited speakers lead the technical program. We received 172 abstracts and after a careful reviewing process by the Technical Program Committee a total of 133 papers were selected for presentation. These have been organized into 16 Oral sessions in two parallel streams and two poster sessions including some late-news papers. The oral and regular poster papers are published by the Institute of Physics (IOP). We have also organized a PowerMEMS School in Kobe-Sannomiya contiguous to the main conference. This two-day school will cover various topics of energy harvesting. World leading experts will give invited lectures on their main topics. This is a new experiment to broaden the technology remit of our conference by organizing mini symposiums that aim to gather the latest research on the following topics by the organizers: Microscale Combustion, Wideband Vibration Energy Harvesting, RF Energy Transfer and Industrial Application. We hope this, and other activities will make PowerMEMS2014 a memorable success. One of the important programs in an international conference is the social program, and we prepare the PowerMEMS2014 banquet in the banquet room at the Westin Awaji Island Hotel. This will provide an opportunity to

  19. CMOS Silicon-on-Sapphire RF Tunable Matching Networks

    Directory of Open Access Journals (Sweden)

    Chamseddine Ahmad

    2006-01-01

    Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

  20. Capacitive behavior of highly-oxidized graphite

    Science.gov (United States)

    Ciszewski, Mateusz; Mianowski, Andrzej

    2014-09-01

    Capacitive behavior of a highly-oxidized graphite is presented in this paper. The graphite oxide was synthesized using an oxidizing mixture of potassium chlorate and concentrated fuming nitric acid. As-oxidized graphite was quantitatively and qualitatively analyzed with respect to the oxygen content and the species of oxygen-containing groups. Electrochemical measurements were performed in a two-electrode symmetric cell using KOH electrolyte. It was shown that prolonged oxidation causes an increase in the oxygen content while the interlayer distance remains constant. Specific capacitance increased with oxygen content in the electrode as a result of pseudo-capacitive effects, from 0.47 to 0.54 F/g for a scan rate of 20 mV/s and 0.67 to 1.15 F/g for a scan rate of 5 mV/s. Better cyclability was observed for the electrode with a higher oxygen amount.

  1. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  2. Carbon nanofiber supercapacitors with large areal capacitances

    KAUST Repository

    McDonough, James R.

    2009-01-01

    We develop supercapacitor (SC) devices with large per-area capacitances by utilizing three-dimensional (3D) porous substrates. Carbon nanofibers (CNFs) functioning as active SC electrodes are grown on 3D nickel foam. The 3D porous substrates facilitate a mass loading of active electrodes and per-area capacitance as large as 60 mg/ cm2 and 1.2 F/ cm2, respectively. We optimize SC performance by developing an annealing-free CNF growth process that minimizes undesirable nickel carbide formation. Superior per-area capacitances described here suggest that 3D porous substrates are useful in various energy storage devices in which per-area performance is critical. © 2009 American Institute of Physics.

  3. Klystron equalization for RF feedback

    International Nuclear Information System (INIS)

    Corredoura, P.

    1993-01-01

    The next generation of colliding beam storage rings support higher luminosities by significantly increasing the number of bunches and decreasing the spacing between respective bunches. The heavy beam loading requires large RF cavity detuning which drives several lower coupled bunch modes very strongly. One technique which has proven to be very successful in reducing the coupled bunch mode driving impedance is RF feedback around the klystron-cavity combination. The gain and bandwidth of the feedback loop is limited by the group delay around the feedback loop. Existing klystrons on the world market have not been optimized for this application and contribute a large portion of the total loop group delay. This paper describes a technique to reduce klystron group delay by adding an equalizing filter to the klystron RF drive. Such a filter was built and tested on a 500 kill klystron as part of the on going PEP-II R ampersand D effort here at SLAC

  4. Electrochemical capacitance performance of titanium nitride nanoarray

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

    2013-12-01

    Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

  5. Capacitance level probe, Type FSK 88

    International Nuclear Information System (INIS)

    Vogt, W.

    2001-01-01

    The aim of the capacitive level probe, Type FSK 88, is to supervise the level within vessels continuously and to signalize alterations immediately. Since 1987 the level probe is installed in the pool for burn up fuel elements and in the reactor containment sump of BWRs, PWRs and WWERs. The capacitive level probe of type FSK 88 was qualified for Loss of Coolant Accidents and seismic events according to international rules. The measuring principle takes credit from the fact that the dielectric with different dielectric constants in a condensator changes the capacity of the condensator. (Authors)

  6. Detecting size and shape of bodies capacitatively

    International Nuclear Information System (INIS)

    Walton, H.

    1980-01-01

    The size and shape of a body is determined by rolling it between the plates of capacitors and measuring the capacitance changes. A capacitor comprising two parallel, spaced wires inclined to the rolling direction and above and below the rolling body scans sections of the body along its longitudinal axis, another determines the body's lengths and a third comprising two non-parallel wires determines the position of the body. The capacitance changes are compared with those produced by a body of known size and shape so that the size and shape of the body can be determined. (author)

  7. RF Loads for Energy Recovery

    CERN Document Server

    Federmann, S; Caspers, F

    2012-01-01

    Different conceptional designs for RF high power loads are presented. One concept implies the use of solid state rectifier modules for direct RF to DC conversion with efficiencies beyond 80%. In addition, robust metallic low-Q resonant structures, capable of operating at high temperatures (>150 ◦C) are discussed. Another design deals with a very high temperature (up to 800 ◦C) air cooled load using a ceramic foam block inside a metal enclosure. This porous ceramic block is the microwave absorber and is not brazed to the metallic enclosure.

  8. rf reference line for PEP

    International Nuclear Information System (INIS)

    Schwarz, H.D.; Weaver, J.N.

    1979-03-01

    A rf phase reference line in 6 segments around the 2200 meter circumference PEP storage ring is described. Each segment of the reference line is phase stabilized by its own independent feedback system, which uses an amplitude modulated reflection from the end of each line. The modulation is kept small and decoupled from the next segment to avoid crosstalk and significant modulation of the rf drive signal. An error evaluation of the system is made. The technical implementation and prototype performance are described. Prototype tests indicate that the phase error around the ring can be held below 1 degree with this relatively simple system

  9. rf reference line for PEP

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, H.D.; Weaver, J.N.

    1979-03-01

    A rf phase reference line in 6 segments around the 2200 meter circumference PEP storage ring is described. Each segment of the reference line is phase stabilized by its own independent feedback system, which uses an amplitude modulated reflection from the end of each line. The modulation is kept small and decoupled from the next segment to avoid crosstalk and significant modulation of the rf drive signal. An error evaluation of the system is made. The technical implementation and prototype performance are described. Prototype tests indicate that the phase error around the ring can be held below 1 degree with this relatively simple system.

  10. Review of Automated Design and Optimization of MEMS

    DEFF Research Database (Denmark)

    Achiche, Sofiane; Fan, Zhun; Bolognini, Francesca

    2007-01-01

    carried out. This paper presents a review of these techniques. The design task of MEMS is usually divided into four main stages: System Level, Device Level, Physical Level and the Process Level. The state of the art o automated MEMS design in each of these levels is investigated....

  11. Buffering Implications for the Design Space of Streaming MEMS Storage

    NARCIS (Netherlands)

    Khatib, M.G.; Abelmann, Leon; Preas, Kathy

    2011-01-01

    Emerging nanotechnology-based systems encounter new non-functional requirements. This work addresses MEMS storage, an emerging technology that promises ultrahigh density and energy-efficient storage devices. We study the buffering requirement of MEMS storage in streaming applications. We show that

  12. Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

    Directory of Open Access Journals (Sweden)

    Di Chen

    2007-05-01

    Full Text Available Electrostatic micro-electro-mechanical system (MEMS is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

  13. Nonlinear Adaptive Filter for MEMS Gyro Error Cancellation

    Data.gov (United States)

    National Aeronautics and Space Administration — Thermal biases are the dominate error in low-cost low-power small MEMS gyros. CubeSats often can't afford the power/mass to put a heater on their MEMS gyros and...

  14. Capacitors and Resistance-Capacitance Networks.

    Science.gov (United States)

    Balabanian, Norman; Root, Augustin A.

    This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

  15. Thermodynamic cycle analysis for capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.

    2009-01-01

    Capacitive deionization (CDI) is an ion removal technology based on temporarily storing ions in the polarization layers of two oppositely positioned electrodes. Here we present a thermodynamic model for the minimum work required for ion separation in the fully reversible case by describing the ionic

  16. Performance relations in Capacitive Deionization systems

    NARCIS (Netherlands)

    Limpt, van B.

    2010-01-01

    Capacitive Deionization (CDI) is a relatively new deionization technology based on the temporary storage of ions on an electrically charged surface. By directing a flow between two oppositely charged surfaces, negatively charged ions will adsorb onto the positively charged surface, and positively

  17. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.

    2015-01-01

    sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  18. Comparison of gate capacitance extraction methodologies

    NARCIS (Netherlands)

    Kazmi, S.N.R.; Schmitz, Jurriaan

    2008-01-01

    In recent years, many new capacitance-voltage measurement approaches have been presented in literature. New approaches became necessary with the rapidly increasing gate current density in newer CMOS generations. Here we present a simulation platform using Silvaco software, to describe the full chain

  19. Inside-out electrical capacitance tomography

    DEFF Research Database (Denmark)

    Kjærsgaard-Rasmussen, Jimmy; Meyer, Knud Erik

    2011-01-01

    In this work we demonstrate the construction of an ‘inside-out’ sensor geometry for electrical capacitance tomography (ECT). The inside-out geometry has the electrodes placed around a tube, as usual, but measuring ‘outwards’. The flow between the electrodes and an outer tube is reconstructed...

  20. Overview of capacitive couplings in windings

    NARCIS (Netherlands)

    Djukic, N.; Encica, L.; Paulides, J.J.H.

    2015-01-01

    The use of electrical machines (EMs) with variable-frequency drives (VFDs) results in electromagnetic interference (EMI). At high frequencies (HFs) of conducted EMI, the impedance of an EM insulation system fed from a VFD is small due to the parasitic capacitive couplings. Thus, the conducted EMI

  1. Capacitive system detects and locates fluid leaks

    Science.gov (United States)

    1966-01-01

    Electronic monitoring system automatically detects and locates minute leaks in seams of large fluid storage tanks and pipelines covered with thermal insulation. The system uses a capacitive tape-sensing element that is adhesively bonded over seams where fluid leaks are likely to occur.

  2. Emittance growth in rf linacs

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1979-01-01

    As the space-charge limit is approached, the current that can be accelerated in an rf linac and the output emittance that can be expected are discussed. The role of the envelope equations to estimate limits is outlined. The results of numerical experiments to explore general properties of emittance growth are given

  3. Field emission in RF cavities

    International Nuclear Information System (INIS)

    Bonin, B.

    1996-01-01

    Electron field emission limits the accelerating gradient in superconducting cavities. It is shown how and why it is an important problem. The phenomenology of field emission is then described, both in DC and RF regimes. Merits of a few plausible 'remedies' to field emission are discussed. (author)

  4. Modern technologies in rf superconductivity

    International Nuclear Information System (INIS)

    Lengeler, H.

    1994-01-01

    The development and application of superconducting rf cavities in particle accelerators is a fine example of advanced technology and of close cooperation with industry. This contribution examines the theoretical and present-day practical limitations of sc cavities and describes some advanced technologies needed for their large scale applications. (orig.)

  5. Broadband direct RF digitization receivers

    CERN Document Server

    Jamin, Olivier

    2014-01-01

    This book discusses the trade-offs involved in designing direct RF digitization receivers for the radio frequency and digital signal processing domains.  A system-level framework is developed, quantifying the relevant impairments of the signal processing chain, through a comprehensive system-level analysis.  Special focus is given to noise analysis (thermal noise, quantization noise, saturation noise, signal-dependent noise), broadband non-linear distortion analysis, including the impact of the sampling strategy (low-pass, band-pass), analysis of time-interleaved ADC channel mismatches, sampling clock purity and digital channel selection. The system-level framework described is applied to the design of a cable multi-channel RF direct digitization receiver. An optimum RF signal conditioning, and some algorithms (automatic gain control loop, RF front-end amplitude equalization control loop) are used to relax the requirements of a 2.7GHz 11-bit ADC. A two-chip implementation is presented, using BiCMOS and 65nm...

  6. Introduction to RF linear accelerators

    International Nuclear Information System (INIS)

    Weiss, M.

    1994-01-01

    The basic features of RF linear accelerators are described. The concept of the 'loaded cavity', essential for the synchronism wave-particle, is introduced, and formulae describing the action of electromagnetic fields on the beam are given. The treatment of intense beams is mentioned, and various existing linear accelerators are presented as examples. (orig.)

  7. MOSFET Degradation Under RF Stress

    NARCIS (Netherlands)

    Sasse, G.T.; Kuper, F.G.; Schmitz, Jurriaan

    2008-01-01

    We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the

  8. The LHC Low Level RF

    CERN Document Server

    Baudrenghien, Philippe; Molendijk, John Cornelis; Olsen, Ragnar; Rohlev, Anton; Rossi, Vittorio; Stellfeld, Donat; Valuch, Daniel; Wehrle, Urs

    2006-01-01

    The LHC RF consists of eight 400 MHz superconducting cavities per ring, with each cavity independently powered by a 300 kW klystron, via a circulator. The challenge for the Low Level is to cope with very high beam current (more than 1 A RF component) and achieve excellent beam lifetime (emittance growth time in excess of 25 hours). Each cavity has an associated Cavity Controller rack consisting of two VME crates which implement high gain RF Feedback, a Tuner Loop with a new algorithm, a Klystron Ripple Loop and a Conditioning system. In addition each ring has a Beam Control system (four VME crates) which includes a Frequency Program, Phase Loop, Radial Loop and Synchronization Loop. A Longitudinal Damper (dipole and quadrupole mode) acting via the 400 MHz cavities is included to reduce emittance blow-up due to filamentation from phase and energy errors at injection. Finally an RF Synchronization system implements the bunch into bucket transfer from the SPS into each LHC ring. When fully installed in 2007, the...

  9. Simulation of synchrotron motion with rf noise

    International Nuclear Information System (INIS)

    Leemann, B.T.; Forest, E.; Chattopadhyay, S.

    1986-08-01

    The theoretical formulation is described that is behind an algorithm for synchrotron phase-space tracking with rf noise and some preliminary simulation results of bunch diffusion under rf noise obtained by actual tracking

  10. Suppression of multipacting in high power RF couplers operating with superconducting cavities

    Energy Technology Data Exchange (ETDEWEB)

    Ostroumov, P.N., E-mail: ostroumov@frib.msu.edu [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States); Kazakov, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Morris, D.; Larter, T.; Plastun, A.S.; Popielarski, J.; Wei, J.; Xu, T. [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States)

    2017-06-01

    Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.

  11. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  12. New dynamic silicon photonic components enabled by MEMS technology

    Science.gov (United States)

    Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

    2018-02-01

    Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

  13. Rf probe technology for the next generation of technological plasmas

    International Nuclear Information System (INIS)

    Law, V.J.; Kenyon, A.J.; Thornhill, N.F.; Seeds, A.J.; Batty, I.

    2001-01-01

    We describe radio frequency (rf) analysis of technological plasmas at the 13.56 MHz fundamental drive frequency and integer narrow-band harmonics up to n = 9. In particular, we demonstrate the use of harmonic amplitude information as a process end-point diagnostic. Using very high frequency (vhf) techniques, we construct non-invasive ex situ remote-coupled probes: a diplexer, an equal-ratio-arm bridge, and a dual directional coupler used as a single directional device. These probes bolt into the plasma-tool 50 Ω transmission-line between the rf generator and matching network, and hence do not require modification of the plasma tool. The 50 Ω probe environment produces repeatable measurements of the chamber capacitance and narrow-band harmonic amplitude with an end-point detection sensitivity corresponding to a 2 dB change in the harmonic amplitude with the removal of 1 cm 2 of photoresist. The methodology and design of an instrument for the measurement of the plasma-tool frequency response, and the plasma harmonic amplitude and phase response are examined. The instrument allows the monitoring of the plasma phase delay, plasma-tool short- and long-term ageing, and process end-point prediction. (author)

  14. RF gun using laser-triggered photocathode

    International Nuclear Information System (INIS)

    Akiyama, H.; Otake, Y.; Naito, T.; Takeuchi, Y.; Yoshioka, M.

    1992-01-01

    An RF gun using laser-triggered photocathode has many advantages as an injector of the linear colliders since it can generate a low emittance and high current pulsed beam. The experimental facility for the RF gun, such as an RF system, a laser system and a photocathode have been fabricated to study the fundamental characteristics. The dynamics of the RF gun has also studied by the 1D sheet beam model. (author)

  15. Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

    2009-01-01

    This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

  16. Nonlinear dynamics of capacitive charging and desalination by porous electrodes

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Bazant, M.Z.

    2010-01-01

    The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a

  17. Local and global particle and power balance in large area capacitive discharges

    International Nuclear Information System (INIS)

    Cho, Suwon; Lieberman, M A

    2003-01-01

    Large area radio frequency (rf) capacitive discharges have attracted recent interest for materials etching and deposition on large area substrates. A distinguishing feature is that the radial distribution of the absorbed rf power in these discharges depends on the rf voltage across the plates, independent of the radial variation of the plasma density n(r). A reduced set of steady-state fluid equations has been used to investigate the radial variation of n and electron temperature T e . The derived equations are shown to be invariant with respect to pL and pR, where p is the pressure, L is the plate separation and R is the discharge radius, and can be further reduced to the equations of the usual global balance model when R ε , the energy relaxation length. In this limit, the ionization frequency and T e are essentially independent of radius and n can be approximately described by the usual radial profile of a zeroth-order Bessel function. When R≥λ ε , n and T e are predominantly determined by local particle and power balance, and the n and T e radial profiles are flat over most of the volume except near the radial boundary, where n falls and T e rises to account for the increased losses at the boundary. The scale length of the edge density variation in the local balance regime is shown to be proportional to the energy relaxation length

  18. A nuclear micro battery for Mems devices

    International Nuclear Information System (INIS)

    Blanchard, J.; Lal, A.; Henderson, D.; Bilbao Y Leon, R.; Guo, H.; Li, H.; Santanam, S.; Yao, R.

    2001-01-01

    Micro-electromechanical Systems (MEMS) have not gained wide use because they lack the on-device power required by many important applications. Several forms of energy could be considered to supply this needed power (solar, fossil fuels, etc), but nuclear sources provide an intriguing option in terms of power density and lifetime. This paper describes several approaches for establishing the viability of nuclear sources for powering realistic MEMS devices. Isotopes currently being used include low-energy beta emitters (solid and liquid) and alpha emitters (solid). Several approaches are being explored for the production of MEMS power sources. The first concept is a junction-type battery. In this case, the charged particles emitted from the decay of the radioisotopes are absorbed by a semiconductor and dissipate most of their energy as ionization of the atoms in the solid. The carriers generated in this fashion are in excess of the number permitted by thermodynamic equilibrium and, if they diffuse to the vicinity of a rectifying junction, induce a voltage across the junction. The second concept involves a more direct use of the charged particles produced by the decay: the creation of a resonator by inducing movement due to attraction or repulsion resulting from the collection of charged particles. As the charge is collected, the deflection of a cantilever beam increases until it contacts a grounded element, thus discharging the beam and causing it to return to its original position. This process will repeat as long as the source is active. One final concept relies on temperature gradients produced by the sources, along with appropriate insulation, to create power using a Peltier device. The source is isolated in order to allow it to reach sufficient temperatures, and the temperature difference between the source and the rest of the device is exploited using the Peltier effect. Performance results will be provided for each of these concepts. (author)

  19. Review of pulsed rf power generation

    International Nuclear Information System (INIS)

    Lavine, T.L.

    1992-04-01

    I am going to talk about pulsed high-power rf generation for normal-conducting electron and positron linacs suitable for applications to high-energy physics in the Next Linear Collider, or NLC. The talk will cover some basic rf system design issues, klystrons and other microwave power sources, rf pulse-compression devices, and test facilities for system-integration studies

  20. Discussion of high brightness rf linear accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1987-01-01

    The fundamental aspects of high-brightness rf linacs are outlined, showing the breadth and complexity of the technology and indicating that synergism with advancements in other areas is important. Areas of technology reviewed include ion sources, injectors, rf accelerator structures, beam dynamics, rf power, and automatic control