RF MEMS theory, design, and technology

CERN Document Server

Rebeiz, Gabriel M

2003-01-01

Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

Wireless Capacitive Pressure Sensor With Directional RF Chip Antenna for High Temperature Environments

Science.gov (United States)

Scardelletti, M. C.; Jordan, J. L.; Ponchak, G. E.; Zorman, C. A.

2015-01-01

This paper presents the design, fabrication and characterization of a wireless capacitive pressure sensor with directional RF chip antenna that is envisioned for the health monitoring of aircraft engines operating in harsh environments. The sensing system is characterized from room temperature (25 C) to 300 C for a pressure range from 0 to 100 psi. The wireless pressure system consists of a Clapp-type oscillator design with a capacitive MEMS pressure sensor located in the LC-tank circuit of the oscillator. Therefore, as the pressure of the aircraft engine changes, so does the output resonant frequency of the sensing system. A chip antenna is integrated to transmit the system output to a receive antenna 10 m away.The design frequency of the wireless pressure sensor is 127 MHz and a 2 increase in resonant frequency over the temperature range of 25 to 300 C from 0 to 100 psi is observed. The phase noise is less than minus 30 dBcHz at the 1 kHz offset and decreases to less than minus 80 dBcHz at 10 kHz over the entire temperature range. The RF radiation patterns for two cuts of the wireless system have been measured and show that the system is highly directional and the MEMS pressure sensor is extremely linear from 0 to 100 psi.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Liquid Metal Droplet and Micro Corrugated Diaphragm RF-MEMS for reconfigurable RF filters

Science.gov (United States)

Irshad, Wasim

Widely Tunable RF Filters that are small, cost-effective and offer ultra low power consumption are extremely desirable. Indeed, such filters would allow drastic simplification of RF front-ends in countless applications from cell phones to satellites in space by replacing switched-array of static acoustic filters and YIG filters respectively. Switched array of acoustic filters are de facto means of channel selection in mobile applications such as cell phones. SAW and BAW filters satisfy most criteria needed by mobile applications such as low cost, size and power consumption. However, the trade-off is a significant loss of 3-4 dB in modern cell phone RF front-end. This leads to need for power-hungry amplifiers and short battery life. It is a necessary trade-off since there are no better alternatives. These devices are in mm scale and consume mW. YIG filters dominate applications where size or power is not a constraint but demand excellent RF performance like low loss and high tuning ratio. These devices are measured in inches and require several watts to operate. Clearly, a tunable RF filter technology that would combine the cost, size and power consumption benefits of acoustic filters with excellent RF performance of YIG filters would be extremely desirable and imminently useful. The objective of this dissertation is to develop such a technology based upon RF-MEMS Evanescent-mode cavity filter. Two highly novel RF-MEMS devices have been developed over the course of this PhD to address the unique MEMS needs of this technology. The first part of the dissertation is dedicated to introducing the fundamental concepts of tunable cavity resonators and filters. This includes the physics behind it, key performance metrics and what they depend on and requirements of the MEMS tuners. Initial gap control and MEMS attachment method are identified as potential hurdles towards achieving very high RF performance. Simple and elegant solutions to both these issues are discussed in

RF sputtering: A viable tool for MEMS fabrication

Indian Academy of Sciences (India)

being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

Programmable differential capacitance-to-voltage converter for MEMS accelerometers

Science.gov (United States)

Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

2017-05-01

Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

A Coupled Field Multiphysics Modeling Approach to Investigate RF MEMS Switch Failure Modes under Various Operational Conditions

Directory of Open Access Journals (Sweden)

Khaled Sadek

2009-10-01

Full Text Available In this paper, the reliability of capacitive shunt RF MEMS switches have been investigated using three dimensional (3D coupled multiphysics finite element (FE analysis. The coupled field analysis involved three consecutive multiphysics interactions. The first interaction is characterized as a two-way sequential electromagnetic (EM-thermal field coupling. The second interaction represented a one-way sequential thermal-structural field coupling. The third interaction portrayed a two-way sequential structural-electrostatic field coupling. An automated substructuring algorithm was utilized to reduce the computational cost of the complicated coupled multiphysics FE analysis. The results of the substructured FE model with coupled field analysis is shown to be in good agreement with the outcome of previously published experimental and numerical studies. The current numerical results indicate that the pull-in voltage and the buckling temperature of the RF switch are functions of the microfabrication residual stress state, the switch operational frequency and the surrounding packaging temperature. Furthermore, the current results point out that by introducing proper mechanical approaches such as corrugated switches and through-holes in the switch membrane, it is possible to achieve reliable pull-in voltages, at various operating temperatures. The performed analysis also shows that by controlling the mean and gradient residual stresses, generated during microfabrication, in conjunction with the proposed mechanical approaches, the power handling capability of RF MEMS switches can be increased, at a wide range of operational frequencies. These design features of RF MEMS switches are of particular importance in applications where a high RF power (frequencies above 10 GHz and large temperature variations are expected, such as in satellites and airplane condition monitoring.

A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications.

Science.gov (United States)

Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

2017-06-07

The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm², which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply.

Some studies on the deformation of the membrane in an RF MEMS switch

NARCIS (Netherlands)

Ambati, Vijaya Raghav; Asheim, Andreas; van den Berg, Jan Bouwe; van Gennip, Yves; Gerasimov, Tymofiy; Hlod, Andriy; Planqué, Bob; van der Schans, Martin; van der Stelt, Sjors; Vargas Rivera, Michelangelo; Vondenhoff, Erwin; Bokhove, Onno; Hurink, Johann; Meinsma, Gjerrit; Stolk, Chris; Vellekoop, Michel

2008-01-01

Radio Frequency (RF) switches of Micro Electro Mechanical Systems (MEMS) are appealing to the mobile industry because of their energy efficiency and ability to accommodate more frequency bands. However, the electromechanical coupling of the electrical circuit to the mechanical components in RF MEMS

MEMS capacitive force sensors for cellular and flight biomechanics

International Nuclear Information System (INIS)

Sun Yu; Nelson, Bradley J

2007-01-01

Microelectromechanical systems (MEMS) are playing increasingly important roles in facilitating biological studies. They are capable of providing not only qualitative but also quantitative information on the cellular, sub-cellular and organism levels, which is instrumental to understanding the fundamental elements of biological systems. MEMS force sensors with their high bandwidth and high sensitivity combined with their small size, in particular, have found a role in this domain, because of the importance of quantifying forces and their effect on the function and morphology of many biological structures. This paper describes our research in the development of MEMS capacitive force sensors that have already demonstrated their effectiveness in the areas of cell mechanics and Drosophila flight dynamics studies. (review article)

Creep characterization of Al alloy thin films for use in RF-MEMS switches

NARCIS (Netherlands)

Modlinski, R.; Witvrouw, A.; Ratchev, P.; Puers, R.; Toonder, den J.M.J.; Wolf, I.C.D.Y.M.

2004-01-01

Creep is expected to be a major reliability problem in some MEMS, as for example RF-MEMS switches, especially at high RF powers. For this reason it should be avoided to use creep sensitive materials in these devices. In this paper we report on creep studies on Al-alloys, materials that are often

Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

OpenAIRE

van Essen, M.C.

2009-01-01

Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2015-11-01

Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

A novel RF MEMS switch with novel mechanical structure modeling

International Nuclear Information System (INIS)

Chan, K Y; Ramer, R

2010-01-01

A novel RF MEMS contact-type switch for RF and microwave applications is presented. The switch is designed with special mechanical structures for stiffness enhancement. A method of using dimple lines to reduce the stress sensitivity of a beam is shown with complete mathematical modeling and finite element mechanical simulation. A complete mathematical model is developed for the proposed switch. Limited fabrication resolution and non-uniformities in layer thickness and stress were taken into consideration for this design, concomitantly with the preservation of device miniaturization and functionalities. The novel mechanical modeling of the switch leads to the estimation of the actuation voltage and shows simplification from previously published analysis. The measured actuation voltage and RF performance of the novel RF MEMS switch are also reported. The switch actuated at 20 V achieved better than 22 dB return loss and less than 0.7 dB insertion loss in on state from dc–40 GHz; it provided better than 30 dB isolation in off state

Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

NARCIS (Netherlands)

van Essen, M.C.

2009-01-01

Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently

A Multifunction Low-Power Preamplifier for MEMS Capacitive Microphones

DEFF Research Database (Denmark)

Jawed, Syed Arsalan; Nielsen, Jannik Hammel; Gottardi, Massimo

2009-01-01

A multi-function two-stage chopper-stabilized preamplifier (PAMP) for MEMS capacitive microphones (MCM) is presented. The PAMP integrates digitally controllable gain, high-pass filtering and offset control, adding flexibility to the front-end readout of MCMs. The first stage of the PAMP consists...... of a source-follower (SF) while the second-stage is a capacitive gain stage. The second-stage employs chopper-stabilization (CHS), while SF buffer shields the MCM sensor from the switching spurs. The PAMP uses M poly bias resistors for the second-stage, exploiting Miller effect to achieve flat audio...

Topology Optimization of Stressed Capacitive RF MEMS Switches

DEFF Research Database (Denmark)

Philippine, Mandy A.; Sigmund, Ole; Rebeiz, Gabriel M.

2013-01-01

Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-o...

Design, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches

Directory of Open Access Journals (Sweden)

Zhongliang Deng

2016-08-01

Full Text Available This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0° at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.

A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators

Science.gov (United States)

Zhao, Jicong; Yuan, Quan; Kan, Xiao; Yang, Jinling; Yang, Fuhua

2017-01-01

This paper presents a wafer-level three-dimensional (3D) vacuum packaging technique for radio frequency microelectromechanical systems (RF MEMS) resonators. A Sn-rich Au-Sn solder bonding is employed to provide a vacuum encapsulation as well as electrical conductions. Vertical silicon vias are micro-fabricated by glass reflow process. The optimized grounding, via pitch, and all-round shielding effectively reduce feed-through capacitance. Thus the signal-to-background ratios (SBRs) of the transmission signals increase from 17 dB to 20 dB, and the quality factor (Q) values of the packaged resonators go from around 8000 up to more than 9500. The measured average leak rate and shear strength are (2.55  ±  0.9)  ×  10-8 atm-cc s-1 and 42.53  ±  4.19 MPa, respectively. Furthermore, thermal cycling test between  -40 °C and 100 °C and high temperature storage test at 150 °C show that the resonant-frequency drifts are less than  ±7 ppm. In addition, the SBRs and the Q values have no obvious change after the tests. The experimental results demonstrated that the proposed encapsulation technique is well suited for the applications of RF MEMS devices.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

KAUST Repository

Elshurafa, Amro M.; Emira, Ahmed; Radwan, Ahmed Gomaa; Salama, Khaled N.

2012-01-01

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality

RF-MEMS Technology for High-Performance Passives; The challenge of 5G mobile applications

Science.gov (United States)

Iannacci, Jacopo

2017-11-01

Commencing with a review of the characteristics of RF-MEMS in relation to 5G, the book proceeds to develop practical insight concerning the design and development of RF-MEMS including case studies of design concepts. Including multiphysics simulation and animated figures, the book will be essential reading for both academic and industrial researchers and engineers.

Differential RF MEMS interwoven capacitor immune to residual stress warping

KAUST Repository

Elshurafa, Amro M.

2012-07-27

A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

Differential RF MEMS interwoven capacitor immune to residual stress warping

KAUST Repository

Elshurafa, Amro M.; Salama, Khaled N.

2012-01-01

A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

Science.gov (United States)

Yi, Zhenxiang; Liao, Xiaoping

2013-03-01

In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8-12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed-fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than -25 dB and an insertion loss of around 0.1 dB at 8-12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW-1 at 8, 10 and 12 GHz, respectively.

Infrastructure for the design and fabrication of MEMS for RF/microwave and millimeter wave applications

Science.gov (United States)

Nerguizian, Vahe; Rafaf, Mustapha

2004-08-01

This article describes and provides valuable information for companies and universities with strategies to start fabricating MEMS for RF/Microwave and millimeter wave applications. The present work shows the infrastructure developed for RF/Microwave and millimeter wave MEMS platforms, which helps the identification, evaluation and selection of design tools and fabrication foundries taking into account packaging and testing. The selected and implemented simple infrastructure models, based on surface and bulk micromachining, yield inexpensive and innovative approaches for distributed choices of MEMS operating tools. With different educational or industrial institution needs, these models may be modified for specific resource changes using a careful analyzed iteration process. The inputs of the project are evaluation selection criteria and information sources such as financial, technical, availability, accessibility, simplicity, versatility and practical considerations. The outputs of the project are the selection of different MEMS design tools or software (solid modeling, electrostatic/electromagnetic and others, compatible with existing standard RF/Microwave design tools) and different MEMS manufacturing foundries. Typical RF/Microwave and millimeter wave MEMS solutions are introduced on the platform during the evaluation and development phases of the project for the validation of realistic results and operational decision making choices. The encountered challenges during the investigation and the development steps are identified and the dynamic behavior of the infrastructure is emphasized. The inputs (resources) and the outputs (demonstrated solutions) are presented in tables and flow chart mode diagrams.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

KAUST Repository

Elshurafa, Amro M.

2012-07-23

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.

Design of pressure-sensing diaphragm for MEMS capacitance diaphragm gauge considering size effect

Science.gov (United States)

Li, Gang; Li, Detian; Cheng, Yongjun; Sun, Wenjun; Han, Xiaodong; Wang, Chengxiang

2018-03-01

MEMS capacitance diaphragm gauge with a full range of (1˜1000) Pa is considered for its wide application prospect. The design of pressure-sensing diaphragm is the key to achieve balanced performance for this kind of gauges. The optimization process of the pressure-sensing diaphragm with island design of a capacitance diaphragm gauge based on MEMS technique has been reported in this work. For micro-components in micro scale range, mechanical properties are very different from that in the macro scale range, so the size effect should not be ignored. The modified strain gradient elasticity theory considering size effect has been applied to determine the bending rigidity of the pressure-sensing diaphragm, which is then used in the numerical model to calculate the deflection-pressure relation of the diaphragm. According to the deflection curves, capacitance variation can be determined by integrating over the radius of the diaphragm. At last, the design of the diaphragm has been optimized based on three parameters: sensitivity, linearity and ground capacitance. With this design, a full range of (1˜1000) Pa can be achieved, meanwhile, balanced sensitivity, resolution and linearity can be kept.

RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

NARCIS (Netherlands)

Schmitz, Jurriaan; Cubaynes, F.N; Cubaynes, F.N.; Havens, R.J.; de Kort, R.; Scholten, A.J.; Tiemeijer, L.F.

2003-01-01

We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

International Nuclear Information System (INIS)

Guo, Xin; Gong, Zhuhao; Zhong, Qi; Liang, Xiaotong; Liu, Zewen

2016-01-01

Reconfigurable attenuators are widely used in microwave measurement instruments. Development of miniaturized attenuation devices with high precision and broadband performance is required for state-of-the-art applications. In this paper, a compact 3-bit microwave attenuator based on radio frequency micro-electro-mechanical system (RF MEMS) switches and polysilicon attenuation modules is presented. The device comprises 12 ohmic contact MEMS switches, π -type polysilicon resistive attenuation modules and microwave compensate structures. Special attention was paid to the design of the resistive network, compensate structures and system simulation. The device was fabricated using micromachining processes compatible with traditional integrated circuit fabrication processes. The reconfigurable attenuator integrated with RF MEMS switches and resistive attenuation modules was successfully fabricated with dimensions of 2.45  ×  4.34  ×  0.5 mm 3 , which is 1/1000th of the size of a conventional step attenuator. The measured RF performance revealed that the attenuator provides 10–70 dB attenuation at 10 dB intervals from 0.1–20 GHz with an accuracy better than  ±1.88 dB at 60 dB and an error of less than 2.22 dB at 10 dB. The return loss of each state of the 3-bit attenuator was better than 11.95 dB (VSWR  <  1.71) over the entire operating band. (paper)

High temperature stable RF MEMS microwave switches

OpenAIRE

Klein, Stefan

2010-01-01

Im Rahmen dieser Arbeit wurden elektrostatisch angesteuerte RF-MEMS Schalter mit kapazitiver Kopplung entwickelt, die Prozesstemperaturen von 400°C und darüber hinaus ohne Verlust der Funktionstüchtigkeit überstehen. Als Funktionsmaterial wird einerseits eine AlSiCu und andererseits eine WTi Legierung verwendet. Das Schalterprinzip beruht auf dem Wanderkeileffekt, der einen gekrümmten Biegebalken nutzt. Diese Verbiegung weg von der Substratoberfläche, die durch einen wohldefinierten intri...

A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

International Nuclear Information System (INIS)

Yi, Zhenxiang; Liao, Xiaoping

2013-01-01

In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8–12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed–fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than −25 dB and an insertion loss of around 0.1 dB at 8–12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW −1 at 8, 10 and 12 GHz, respectively. (paper)

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

Science.gov (United States)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

PZT-on-silicon RF-MEMS Lamb wave resonators and filters

NARCIS (Netherlands)

Yagubizade, H.

2013-01-01

Lamb-wave piezoelectric RF-MEMS resonators have demonstrated promising performance, such as low motional impedance and high Q-factor. Lamb-wave resonators are still in the perfectioning state and therefore there is a great demand for further understanding of various issues such as reducing the

MEMS capacitive accelerometer-based middle ear microphone.

Science.gov (United States)

Young, Darrin J; Zurcher, Mark A; Semaan, Maroun; Megerian, Cliff A; Ko, Wen H

2012-12-01

The design, implementation, and characterization of a microelectromechanical systems (MEMS) capacitive accelerometer-based middle ear microphone are presented in this paper. The microphone is intended for middle ear hearing aids as well as future fully implantable cochlear prosthesis. Human temporal bones acoustic response characterization results are used to derive the accelerometer design requirements. The prototype accelerometer is fabricated in a commercial silicon-on-insulator (SOI) MEMS process. The sensor occupies a sensing area of 1 mm × 1 mm with a chip area of 2 mm × 2.4 mm and is interfaced with a custom-designed low-noise electronic IC chip over a flexible substrate. The packaged sensor unit occupies an area of 2.5 mm × 6.2 mm with a weight of 25 mg. The sensor unit attached to umbo can detect a sound pressure level (SPL) of 60 dB at 500 Hz, 35 dB at 2 kHz, and 57 dB at 8 kHz. An improved sound detection limit of 34-dB SPL at 150 Hz and 24-dB SPL at 500 Hz can be expected by employing start-of-the-art MEMS fabrication technology, which results in an articulation index of approximately 0.76. Further micro/nanofabrication technology advancement is needed to enhance the microphone sensitivity for improved understanding of normal conversational speech.

A capacitive rf power sensor based on mems technology

NARCIS (Netherlands)

Fernandez, L.J.

2005-01-01

Existing power sensors for RF signals are based on thermistors, diodes and thermocouples. These power sensors are used as terminating devices and therefore they dissipate the complete incoming signal. Furthermore, new telecommunication systems require low weight, volume and power consumption and a

Quasi-Optical Network Analyzers and High-Reliability RF MEMS Switched Capacitors

Science.gov (United States)

Grichener, Alexander

The thesis first presents a 2-port quasi-optical scalar network analyzer consisting of a transmitter and receiver both built in planar technology. The network analyzer is based on a Schottky-diode mixer integrated inside a planar antenna and fed differentially by a CPW transmission line. The antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The LO signal is swept from 3-5 GHz and high-order harmonic mixing in both up- and down- conversion mode is used to realize the 15-50 GHz RF bandwidth. The network analyzer resulted in a dynamic range of greater than 40 dB and was successfully used to measure a frequency selective surface with a second-order bandpass response. Furthermore, the system was built with circuits and components for easy scaling to millimeter-wave frequencies which is the primary motivation for this work. The application areas for a millimeter and submillimeter-wave network analyzer include material characterization and art diagnostics. The second project presents several RF MEMS switched capacitors designed for high-reliability operation and suitable for tunable filters and reconfigurable networks. The first switched-capacitor resulted in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam resulted in Q greater than 100 at C to X-band frequencies, and power handling of 0.6-1.1 W. The design also minimized charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high power (1 W) conditions. The second switched-capacitor was designed without any dielectric to minimize charging. The device was hot-switched at 1 W of RF power for greater than 11 billion cycles with virtually no change in the C-V curve. The final project presents a 7-channel

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

Science.gov (United States)

Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

2018-02-01

In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

Science.gov (United States)

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

Directory of Open Access Journals (Sweden)

Guillermo Royo

2016-12-01

Full Text Available In this work, we present a capacitance-to-voltage converter (CVC for capacitive accelerometers based on microelectromechanical systems (MEMS. Based on a fully-differential transimpedance amplifier (TIA, it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Staging of RF-accelerating Units in a MEMS-based Ion Accelerator

Science.gov (United States)

Persaud, A.; Seidl, P. A.; Ji, Q.; Feinberg, E.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Vinayakumar, K. B.; Lal, A.

Multiple Electrostatic Quadrupole Array Linear Accelerators (MEQALACs) provide an opportunity to realize compact radio- frequency (RF) accelerator structures that can deliver very high beam currents. MEQALACs have been previously realized with acceleration gap distances and beam aperture sizes of the order of centimeters. Through advances in Micro-Electro-Mechanical Systems (MEMS) fabrication, MEQALACs can now be scaled down to the sub-millimeter regime and batch processed on wafer substrates. In this paper we show first results from using three RF stages in a compact MEMS-based ion accelerator. The results presented show proof-of-concept with accelerator structures formed from printed circuit boards using a 3 × 3 beamlet arrangement and noble gas ions at 10 keV. We present a simple model to describe the measured results. We also discuss some of the scaling behaviour of a compact MEQALAC. The MEMS-based approach enables a low-cost, highly versatile accelerator covering a wide range of currents (10 μA to 100 mA) and beam energies (100 keV to several MeV). Applications include ion-beam analysis, mass spectrometry, materials processing, and at very high beam powers, plasma heating.

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Directory of Open Access Journals (Sweden)

Amna Riaz

2018-01-01

Full Text Available Microelectromechanical Systems (MEMS are devices made up of several electrical and mechanical components. They consist of mechanical functions (sensing, thermal, inertial and electrical functions (switching, decision making on a single chip made by microfabrication methods. These chips exhibit combined properties of the two functions. The size of system has characteristic dimensions less than 1mm but more than 1μm. The configuration of these components determine the final deliverables of the switch. MEMS can be designed to meet user requirements on any level from microbiological application such as biomedical transducers or tissue engineering, to mechanical systems such as microfluidic diagnoses or chemical fuel cells. The low cost, small mass and minimal power consumption of the MEMS makes it possible to readily integrate to any kind of system in any environment. MEMS are faster, better and cheaper. They offer excellent electrical performances. MEMS working at Radio frequencies are RF MEMS. RF-MEMS switches find huge market in the modern telecommunication networks, biological, automobiles, satellites and defense systems because of their lower power consumptions at relatively higher frequencies and better electrical performances. But the reliability is the major hurdle in the fate of RF MEMS switches. Reliability mainly arises due to the presence of residual stresses, charging current, fatigue and creep and contact degradation. The presence of residual stresses in switches the S-Parameters of the switches are affected badly and the residual stress affects the final planarity of the fabricated structure. Design and simulation of an RF-MEMS switch is proposed considering the residual stresses in both on and off state. The operating frequency band is being optimized and the best possible feasible fabrication technique for the proposed switch design is being analyzed. S-Parameters are calculated and a comparison for the switches with stress and

Designing a robust high-speed CMOS-MEMS capacitive humidity sensor

International Nuclear Information System (INIS)

Lazarus, N; Fedder, G K

2012-01-01

In our previous work (Lazarus and Fedder 2011 J. Micromech. Microeng. 21 0650281), we demonstrated a CMOS-MEMS capacitive humidity sensor with a 72% improvement in sensitivity over the highest previously integrated on a CMOS die. This paper explores a series of methods for creating a faster and more manufacturable high-sensitivity capacitive humidity sensor. These techniques include adding oxide pillars to hold the plates apart, spin coating polymer to allow sensors to be fabricated more cheaply, adding a polysilicon heater and etching away excess polymer in the release holes. In most cases a tradeoff was found between sensitivity and other factors such as response time or robustness. A robust high-speed sensor was designed with a sensitivity of 0.21% change in capacitance per per cent relative humidity, while dropping the response time constant from 70 to 4s. Although less sensitive than our design, the sensor remains 17% more sensitive than the most sensitive interdigitated designs successfully integrated with CMOS. (paper)

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

NARCIS (Netherlands)

Tilmans, H.A.C.; Ziad, H.; Jansen, Henricus V.; Di Monaco, O.; Jourdain, A.; De Raedt, W.; Rottenberg, X.; De Backer, E.; Decoussernaeker, A.; Baert, K.

2001-01-01

Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as

Single-Chip Multiple-Frequency RF MEMS Resonant Platform for Wireless Communications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A novel, single-chip, multiple-frequency platform for RF/IF filtering and clock reference based on contour-mode aluminum nitride (AlN) MEMS piezoelectric resonators...

CMOS based capacitance to digital converter circuit for MEMS sensor

Science.gov (United States)

Rotake, D. R.; Darji, A. D.

2018-02-01

Most of the MEMS cantilever based system required costly instruments for characterization, processing and also has large experimental setups which led to non-portable device. So there is a need of low cost, highly sensitive, high speed and portable digital system. The proposed Capacitance to Digital Converter (CDC) interfacing circuit converts capacitance to digital domain which can be easily processed. Recent demand microcantilever deflection is part per trillion ranges which change the capacitance in 1-10 femto farad (fF) range. The entire CDC circuit is designed using CMOS 250nm technology. Design of CDC circuit consists of a D-latch and two oscillators, namely Sensor controlled oscillator (SCO) and digitally controlled oscillator (DCO). The D-latch is designed using transmission gate based MUX for power optimization. A CDC design of 7-stage, 9-stage and 11-stage tested for 1-18 fF and simulated using mentor graphics Eldo tool with parasitic. Since the proposed design does not use resistance component, the total power dissipation is reduced to 2.3621 mW for CDC designed using 9-stage SCO and DCO.

Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

Directory of Open Access Journals (Sweden)

Zhuhao Gong

2018-02-01

Full Text Available A radio-frequency micro-electro-mechanical system (RF MEMS wafer-level packaging (WLP method using pre-patterned benzo-cyclo-butene (BCB polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to generate the housing cavity, the BCB sealing ring was protected by a sputtered Cr/Au (chromium/gold layer. The average measured thickness of the BCB layer was 5.9 μm. In contrast to the conventional methods of spin-coating BCB after fabricating cavities, the pre-patterned BCB method presented BCB bonding layers with better quality on severe topography surfaces in terms of increased uniformity of thickness and better surface flatness. The observation of the bonded layer showed that no void or gap formed on the protruding coplanar waveguide (CPW lines. A shear strength test was experimentally implemented as a function of the BCB widths in the range of 100–400 μm. The average shear strength of the packaged device was higher than 21.58 MPa. A RF MEMS switch was successfully packaged using this process with a negligible impact on the microwave characteristics and a significant improvement in the lifetime from below 10 million to over 1 billion. The measured insertion loss of the packaged RF MEMS switch was 0.779 dB and the insertion loss deterioration caused by the package structure was less than 0.2 dB at 30 GHz.

Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

KAUST Repository

Molinero, David G.; Luo, Xi; Shen, Chao; Palego, Cristiano; Hwang, James; Goldsmith, Charles L.

2013-01-01

This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

KAUST Repository

Molinero, David G.

2013-03-01

This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

RF Front End Based on MEMS Components for Miniaturized Digital EVA Radio, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In this SBIR project, AlphaSense, Inc. and the Carnegie Mellon University propose to develop a RF receiver front end based on CMOS-MEMS components for miniaturized...

Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

OpenAIRE

Zhuhao Gong; Yulong Zhang; Xin Guo; Zewen Liu

2018-01-01

A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to gener...

Simulation and optimization of a totally free flexible RF MEMS switch

International Nuclear Information System (INIS)

Lorphelin, N; Robin, R; Rollier, A S; Touati, S; Kanciurzewski, A; Millet, O; Segueni, K

2009-01-01

This paper presents the principle and the modeling of an innovative RF MEMS switch designed for low voltage applications, especially for mobile phones. This switch is based on a totally free flexible membrane, which is supported by pillars and actuated electrostatically by two pairs of electrodes, enabling two forced states. The main advantage of this structure is the use of a lever effect in order to provide high deflections above the transmission line even with a small gap, which explains why the actuation voltage is small compared to classical MEMS switches. The Euler–Bernoulli beam theory is applied to build an analytical 1D model with boundary conditions, which depend on the type of actuation and if pull-in is reached or not. This model is discretized and solved by the finite difference method. Then, a more accurate 3D finite element method is applied to add corrections to the first model. Once this modeling approach is validated, it is used to determine adequate geometrical parameters for the desired switch specifications. Mechanical characterizations on processed components show a pull-in voltage about 7.5 V, which is in good agreement with simulated values. RF measurements show excellent performances

Three dimensional MEMS supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Sun, Wei

2011-10-15

and the specific power of 0.58 mWcm-2 at 20mVs-1 scan rate. The 3D MEMS supercapacitor fabricated in this project has the specific capacitance and the specific power of 0.029 F cm-2 and 2.2 mWcm-2 respectively at a relative large discharge rate of 5 m Acm-2. It is also found vi that the supercapacitors have the performance of broad frequency range up to 300Hz. For DRIE based 3D MEMS supercapacitor, the innovative designs were developed based on silicon micromachining process flow which includes the key processes such as thermal oxidation, RF sputtering, wet etching, DRIE, electroless plating and P Py polymerization. The optimized P Py electrode doping with Tos- performed ideal super capacitor properties in NaCl electrolyte. The single PPy electrode of the 3D MEMS supercapacitors can provide 0.128 F cm-2 specific capacitance and 1.28 mWcm-2 specific power at 20 mvs-1 scan rate. The specific capacitance of the 3D MEMS supercapacitors equals 0.056 F cm-2, and the specific power at 20 mvs-1 scan rate equals 0.56 mWcm-2. In addition, novel supercapacitors based on wafer level process are designed for flexible integration in applications such as high temperature electronics and hybrid power system for electric vehicles. Experimental work on TiO2 anodic oxidation, which enables the fabrication of the one of these designs, has been carried out. Dense TiO2 nano holes with diameters ranged from about 90 to 270 nm were obtained in 0.05 wt% HF aqueous solutions with two-step anodic oxidation method. Comparing to the published specific capacitance (about 2 mFcm-2) for microsupercapacitors [33], I have achieved much larger specific capacitance (typically 0.029 to 0.056 F cm-2) for 3D MEMS supercapacitors. The above results have been presented in 3 international conferences. Total 4 journal articles have been published, and one has been submitted. The article in the Journal of Power Source (appendix 3) has been cited 9 times after published in April 2009, and the article in

The RF voltage dependence of the electron sheath heating in low pressure capacitively coupled rf discharges

International Nuclear Information System (INIS)

Buddemeier, U.; Kortshagen, U.; Pukropski, I.

1995-01-01

In low pressure capacitively coupled RF discharges two competitive electron heating mechanisms have been discussed for some time now. At low pressures the stochastic sheath heating and for somewhat higher pressures the Joule heating in the bulk plasma have been proposed. When the pressure is increased at constant RF current density a transition from concave electron distribution functions (EDF) with a pronounced cold electron group to convex EDFs with a missing strong population of cold electrons is found. This transition was interpreted as the transition from dominant stochastic to dominant Joule heating. However, a different interpretation has been given by Kaganovich and Tsendin, who attributed the concave shaped EDFs to the spatially inhomogeneous RF field in combination with the nonlocality of the EDF

RF-MEMS for high-performance and widely reconfigurable passive components – A review with focus on future telecommunications, Internet of Things (IoT and 5G applications

Directory of Open Access Journals (Sweden)

Jacopo Iannacci

2017-10-01

This work frames the current state of RF-MEMS market exploitation, analysing the main reasons impairing in past years the proper employment of Microsystem technology based RF passive components. Moreover, highlights on further expansion of RF-MEMS solutions in mobile and telecommunication systems will be briefly provided and discussed.

116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer

International Nuclear Information System (INIS)

Long Shanli; Liu Yan; He Kejun; Tang Xinggang; Chen Qian

2014-01-01

A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is −116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5 × 2.5 mm 2 and the current is 3.5 mA. (semiconductor integrated circuits)

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

International Nuclear Information System (INIS)

Iannacci, J; Tschoban, C

2017-01-01

RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  −10 dB to  −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed. (paper)

MEMS-based, RF-driven, compact accelerators

Science.gov (United States)

Persaud, A.; Seidl, P. A.; Ji, Q.; Breinyn, I.; Waldron, W. L.; Schenkel, T.; Vinayakumar, K. B.; Ni, D.; Lal, A.

2017-10-01

Shrinking existing accelerators in size can reduce their cost by orders of magnitude. Furthermore, by using radio frequency (RF) technology and accelerating ions in several stages, the applied voltages can be kept low paving the way to new ion beam applications. We make use of the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and have previously shown the implementation of its basic components using printed circuit boards, thereby reducing the size of earlier MEQALACs by an order of magnitude. We now demonstrate the combined integration of these components to form a basic accelerator structure, including an initial beam-matching section. In this presentation, we will discuss the results from the integrated multi-beam ion accelerator and also ion acceleration using RF voltages generated on-board. Furthermore, we will show results from Micro-Electro-Mechanical Systems (MEMS) fabricated focusing wafers, which can shrink the dimension of the system to the sub-mm regime and lead to cheaper fabrication. Based on these proof-of-concept results we outline a scaling path to high beam power for applications in plasma heating in magnetized target fusion and in neutral beam injectors for future Tokamaks. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC02-05CH11231.

Diagnostics of ballistic electrons in a dc/rf hybrid capacitively coupled discharge

International Nuclear Information System (INIS)

Xu Lin; Chen, Lee; Funk, Merritt; Ranjan, Alok; Hummel, Mike; Bravenec, Ron; Sundararajan, Radha; Economou, Demetre J.; Donnelly, Vincent M.

2008-01-01

The energy distribution of ballistic electrons in a dc/rf hybrid parallel-plate capacitively coupled plasma reactor was measured. Ballistic electrons originated as secondaries produced by ion and electron bombardment of the electrodes. The energy distribution of ballistic electrons peaked at the value of the negative bias applied to the dc electrode. As that bias became more negative, the ballistic electron current on the rf substrate electrode increased dramatically. The ion current on the dc electrode also increased

Method of Measuring the Mismatch of Parasitic Capacitance in MEMS Accelerometer Based on Regulating Electrostatic Stiffness

Directory of Open Access Journals (Sweden)

Xianshan Dong

2018-03-01

Full Text Available For the MEMS capacitive accelerometer, parasitic capacitance is a serious problem. Its mismatch will deteriorate the performance of accelerometer. Obtaining the mismatch of the parasitic capacitance precisely is helpful for improving the performance of bias and scale. Currently, the method of measuring the mismatch is limited in the direct measuring using the instrument. This traditional method has low accuracy for it would lead in extra parasitic capacitive and have other problems. This paper presents a novel method based on the mechanism of a closed-loop accelerometer. The strongly linear relationship between the output of electric force and the square of pre-load voltage is obtained through theoretical derivation and validated by experiment. Based on this relationship, the mismatch of parasitic capacitance can be obtained precisely through regulating electrostatic stiffness without other equipment. The results can be applied in the design of decreasing the mismatch and electrical adjusting for eliminating the influence of the mismatch.

Verification of high voltage rf capacitive sheath models with particle-in-cell simulations

Science.gov (United States)

Wang, Ying; Lieberman, Michael; Verboncoeur, John

2009-10-01

Collisionless and collisional high voltage rf capacitive sheath models were developed in the late 1980's [1]. Given the external parameters of a single-frequency capacitively coupled discharge, plasma parameters including sheath width, electron and ion temperature, plasma density, power, and ion bombarding energy can be estimated. One-dimensional electrostatic PIC codes XPDP1 [2] and OOPD1 [3] are used to investigate plasma behaviors within rf sheaths and bulk plasma. Electron-neutral collisions only are considered for collisionless sheaths, while ion-neutral collisions are taken into account for collisional sheaths. The collisionless sheath model is verified very well by PIC simulations for the rf current-driven and voltage-driven cases. Results will be reported for collisional sheaths also. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16 (1988) 638; 17 (1989) 338 [2] J. P. Verboncoeur, M. V. Alves, V. Vahedi, and C. K. Birdsall, J. Comp. Phys. 104 (1993) 321 [3] J. P. Verboncoeur, A. B. Langdon and N. T. Gladd, Comp. Phys. Comm. 87 (1995) 199

Modelling of Spring Constant and Pull-down Voltage of Non-uniform RF MEMS Cantilever Incorporating Stress Gradient

Directory of Open Access Journals (Sweden)

Shimul Chandra SAHA

2008-11-01

Full Text Available We have presented a model for spring constant and pull-down voltage of a non-uniform radio frequency microelectromechanical systems (RF MEMS cantilever that works on electrostatic actuation. The residual stress gradient in the beam material that may arise during the fabrication process is also considered in the model. Using basic force deflection calculation of the suspended beam, a stand-alone model for the spring constant and pull-down voltage of the non-uniform cantilever is developed. To compare the model, simulation is performed using standard Finite Element Method (FEM analysis tolls from CoventorWare. The model matches very well with the FEM simulation results. The model will offer an efficient means of design, analysis, and optimization of RF MEMS cantilever switches.

Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor

Science.gov (United States)

Chang, Chun-I.; Tsai, Ming-Han; Liu, Yu-Chia; Sun, Chih-Ming; Fang, Weileun

2013-09-01

This study exploits the foundry available complimentary metal-oxide-semiconductor (CMOS) process and the packaging house available pick-and-place technology to implement a capacitive type micromachined 2-axis tilt sensor. The suspended micro mechanical structures such as the spring, stage and sensing electrodes are fabricated using the CMOS microelectromechanical systems (MEMS) processes. A bulk block is assembled onto the suspended stage by pick-and-place technology to increase the proof-mass of the tilt sensor. The low temperature UV-glue dispensing and curing processes are employed to bond the block onto the stage. Thus, the sensitivity of the CMOS MEMS capacitive type 2-axis tilt sensor is significantly improved. In application, this study successfully demonstrates the bonding of a bulk solder ball of 100 µm in diameter with a 2-axis tilt sensor fabricated using the standard TSMC 0.35 µm 2P4M CMOS process. Measurements show the sensitivities of the 2-axis tilt sensor are increased for 2.06-fold (x-axis) and 1.78-fold (y-axis) after adding the solder ball. Note that the sensitivity can be further improved by reducing the parasitic capacitance and the mismatch of sensing electrodes caused by the solder ball.

Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment

Science.gov (United States)

Zawawi, S. A.; Hamzah, A. A.; Mohd-Yasin, F.; Majlis, B. Y.

2017-08-01

In this project, SiC based MEMS capacitive microphone was developed for detecting leaked gas in extremely harsh environment such as coal mines and petroleum processing plants via ultrasonic detection. The MEMS capacitive microphone consists of two parallel plates; top plate (movable diaphragm) and bottom (fixed) plate, which separated by an air gap. While, the vent holes were fabricated on the back plate to release trapped air and reduce damping. In order to withstand high temperature and pressure, a 1.0 μm thick SiC diaphragm was utilized as the top membrane. The developed SiC could withstand a temperature up to 1400°C. Moreover, the 3 μm air gap is invented between the top membrane and the bottom plate via wafer bonding. COMSOL Multiphysics simulation software was used for design optimization. Various diaphragms with sizes of 600 μm2, 700 μm2, 800 μm2, 900 μm2 and 1000 μm2 are loaded with external pressure. From this analysis, it was observed that SiC microphone with diaphragm width of 1000 μm2 produced optimal surface vibrations, with first-mode resonant frequency of approximately 36 kHz. The maximum deflection value at resonant frequency is less than the air gap thickness of 8 mu;m, thus eliminating the possibility of shortage between plates during operation. As summary, the designed SiC capacitive microphone has high potential and it is suitable to be applied in ultrasonic gas leaking detection in harsh environment.

Topology optimized RF MEMS switches

DEFF Research Database (Denmark)

Philippine, M. A.; Zareie, H.; Sigmund, Ole

2013-01-01

Topology optimization is a rigorous and powerful method that should become a standard MEMS design tool - it can produce unique and non-intuitive designs that meet complex objectives and can dramatically improve the performance and reliability of MEMS devices. We present successful uses of topology...

Identification of Capacitive MEMS Accelerometer Structure Parameters for Human Body Dynamics Measurements

Directory of Open Access Journals (Sweden)

Vincas Benevicius

2013-08-01

Full Text Available Due to their small size, low weight, low cost and low energy consumption, MEMS accelerometers have achieved great commercial success in recent decades. The aim of this research work is to identify a MEMS accelerometer structure for human body dynamics measurements. Photogrammetry was used in order to measure possible maximum accelerations of human body parts and the bandwidth of the digital acceleration signal. As the primary structure the capacitive accelerometer configuration is chosen in such a way that sensing part measures on all three axes as it is 3D accelerometer and sensitivity on each axis is equal. Hill climbing optimization was used to find the structure parameters. Proof-mass displacements were simulated for all the acceleration range that was given by the optimization problem constraints. The final model was constructed in Comsol Multiphysics. Eigenfrequencies were calculated and model’s response was found, when vibration stand displacement data was fed into the model as the base excitation law. Model output comparison with experimental data was conducted for all excitation frequencies used during the experiments.

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

International Nuclear Information System (INIS)

Basu, A; Adams, G G; McGruer, N E

2016-01-01

Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

International Nuclear Information System (INIS)

Su Shi; Liao Xiaoping

2009-01-01

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

Design and application of a metal wet-etching post-process for the improvement of CMOS-MEMS capacitive sensors

International Nuclear Information System (INIS)

Tsai, Ming-Han; Sun, Chih-Ming; Liu, Yu-Chia; Fang, Weileun; Wang, Chuanwei

2009-01-01

This study presents a process design methodology to improve the performance of a CMOS-MEMS gap-closing capacitive sensor. In addition to the standard CMOS process, the metal wet-etching approach is employed as the post-CMOS process to realize the present design. The dielectric layers of the CMOS process are exploited to form the main micro mechanical structures of the sensor. The metal layers of the CMOS process are used as the sensing electrodes and sacrificial layers. The advantages of the sensor design are as follows: (1) the parasitic capacitance is significantly reduced by the dielectric structure, (2) in-plane and out-of-plane sensing gaps can be reduced to increase the sensitivity, and (3) plate-type instead of comb-type out-of-plane sensing electrodes are available to increase the sensing electrode area. To demonstrate the feasibility of the present design, a three-axis capacitive CMOS-MEMS accelerometers chip is implemented and characterized. Measurements show that the sensitivities of accelerometers reach 11.5 mV G −1 (in the X-, Y-axes) and 7.8 mV G −1 (in the Z-axis), respectively, which are nearly one order larger than existing designs. Moreover, the detection of 10 mG excitation using the three-axis accelerometer is demonstrated for both in-plane and out-of-plane directions

Characterization of a piezoelectric MEMS actuator surface toward motion-enabled reconfigurable RF circuits

Science.gov (United States)

Tellers, M. C.; Pulskamp, J. S.; Bedair, S. S.; Rudy, R. Q.; Kierzewski, I. M.; Polcawich, R. G.; Bergbreiter, S. E.

2018-03-01

As an alternative to highly constrained hard-wired reconfigurable RF circuits, a motion-enabled reconfigurable circuit (MERC) offers freedom from transmission line losses and homogeneous materials selection. The creation of a successful MERC requires a precise mechanical mechanism for relocating components. In this work, a piezoelectric MEMS actuator array is modeled and experimentally characterized to assess its viability as a solution to the MERC concept. Actuation and design parameters are evaluated, and the repeatability of high quality on-axis motion at greater than 1 mm s-1 is demonstrated with little positional error. Finally, an initial proof-of-concept circuit reconfiguration has been demonstrated using off-the-shelf RF filter components. Although initial feasibility tests show filter performance degradation with an additional insertion loss of 0.3 dB per contact, out-of-band rejection degradation as high as 10 dB, and ripple performance reduction from 0.25 dB to 1.5 dB, MERC is proven here as an alternative to traditional approaches used in reconfigurable RF circuit applications.

MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

International Nuclear Information System (INIS)

Elshurafa, Amro M; El-Masry, Ezz I

2010-01-01

This paper, the first in a series of two, presents a paradigm shift in the design of MEMS parallel plate PolyMUMPS variable capacitance devices by proposing two structures that utilize the substrate and are able to provide predetermined, customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices where the tuning range is fixed and cannot be varied. Theoretical analysis is carried out and verified with measurements of fabricated devices. The first proposed device possessed initially a tuning range of 4.4. Two variations of the structure having tuning ranges of 3 and 3.4, all at 1 GHz, were also successfully developed and tested. The second proposed variable capacitance device behaved as a switch.

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

Science.gov (United States)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

MEMS variable capacitance devices utilizing the substrate: I. Novel devices with a customizable tuning range

KAUST Repository

Elshurafa, Amro M.

2010-03-22

This paper, the first in a series of two, presents a paradigm shift in the design of MEMS parallel plate PolyMUMPS variable capacitance devices by proposing two structures that utilize the substrate and are able to provide predetermined, customizable, tuning ranges and/or ratios. The proposed structures can provide theoretical tuning ranges anywhere from 4.9 to 35 and from 3.4 to 26 respectively with a simple, yet effective, layout modification as opposed to the previously reported devices where the tuning range is fixed and cannot be varied. Theoretical analysis is carried out and verified with measurements of fabricated devices. The first proposed device possessed initially a tuning range of 4.4. Two variations of the structure having tuning ranges of 3 and 3.4, all at 1 GHz, were also successfully developed and tested. The second proposed variable capacitance device behaved as a switch. © 2010 IOP Publishing Ltd.

Piezoelectric Zinc Oxide Based MEMS Acoustic Sensor

Directory of Open Access Journals (Sweden)

Aarti Arora

2008-04-01

Full Text Available An acoustic sensors exhibiting good sensitivity was fabricated using MEMS technology having piezoelectric zinc oxide as a dielectric between two plates of capacitor. Thin film zinc oxide has structural, piezoelectric and optical properties for surface acoustic wave (SAW and bulk acoustic wave (BAW devices. Oxygen effficient films are transparent and insulating having wide applications for sensors and transducers. A rf sputtered piezoelectric ZnO layer transforms the mechanical deflection of a thin etched silicon diaphragm into a piezoelectric charge. For 25-micron thin diaphragm Si was etched in tetramethylammonium hydroxide solution using bulk micromachining. This was followed by deposition of sandwiched structure composed of bottom aluminum electrode, sputtered 3 micron ZnO film and top aluminum electrode. A glass having 1 mm diameter hole was bonded on backside of device to compensate sound pressure in side the cavity. The measured value of central capacitance and dissipation factor of the fabricated MEMS acoustic sensor was found to be 82.4pF and 0.115 respectively, where as the value of ~176 pF was obtained for the rim capacitance with a dissipation factor of 0.138. The response of the acoustic sensors was reproducible for the devices prepared under similar processing conditions under different batches. The acoustic sensor was found to be working from 30Hz to 8KHz with a sensitivity of 139µV/Pa under varying acoustic pressure.

MEMS-based Circuits and Systems for Wireless Communication

CERN Document Server

Kaiser, Andreas

2013-01-01

MEMS-based Circuits and Systems for Wireless Communication provides comprehensive coverage of RF-MEMS technology from device to system level. This edited volume places emphasis on how system performance for radio frequency applications can be leveraged by Micro-Electro-Mechanical Systems (MEMS). Coverage also extends to innovative MEMS-aware radio architectures that push the potential of MEMS technology further ahead.  This work presents a broad overview of the technology from MEMS devices (mainly BAW and Si MEMS resonators) to basic circuits, such as oscillators and filters, and finally complete systems such as ultra-low-power MEMS-based radios. Contributions from leading experts around the world are organized in three parts. Part I introduces RF-MEMS technology, devices and modeling and includes a prospective outlook on ongoing developments towards Nano-Electro-Mechanical Systems (NEMS) and phononic crystals. Device properties and models are presented in a circuit oriented perspective. Part II focusses on ...

Recent Developments of Reflectarray Antennas for Reconfigurable Beams Using Surface-Mounted RF-MEMS

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Eduardo Carrasco

2012-01-01

Full Text Available Some of the most recent developments in reconfigurable reflectarrays using surface-mounted RF-MEMS, which have been developed at the Universidad Politécnica de Madrid, are summarized in this paper. The results include reconfigurable elements based on patches aperture-coupled to delay lines in two configurations: single elements and gathered elements which form subarrays with common phase control. The former include traditional aperture-coupled elements and a novel wideband reflectarray element which has been designed using two stacked patches. The latter are proposed as a low cost solution for reducing the number of electronic control devices as well as the manufacturing complexity of large reflectarrays. The main advantages and drawbacks of the grouping are evaluated in both pencil and shaped-beam antennas. In all the cases, the effects of the MEMS switches and their assembly circuitry are evaluated when they are used in a 2-bit phase shifter which can be extended to more bits, demonstrating that the proposed elements can be used efficiently in reconfigurable-beam reflectarrays.

MEMS for automotive and aerospace applications

CERN Document Server

Kraft, Michael

2013-01-01

MEMS for automotive and aerospace applications reviews the use of Micro-Electro-Mechanical-Systems (MEMS) in developing solutions to the unique challenges presented by the automotive and aerospace industries.Part one explores MEMS for a variety of automotive applications. The role of MEMS in passenger safety and comfort, sensors for automotive vehicle stability control applications and automotive tire pressure monitoring systems are considered, along with pressure and flow sensors for engine management, and RF MEMS for automotive radar sensors. Part two then goes on to explore MEMS for

Pyrolysis treatment of waste tire powder in a capacitively coupled RF plasma reactor

Energy Technology Data Exchange (ETDEWEB)

Huang, H. [Department of Environmental Engineering, Guangdong University of Technology, Waihuanxi Road, Guangzhou 510006 (China); Tang, L. [Department of Civil Engineering, Guangzhou University, Waihuanxi Road, Guangzhou 510006 (China)

2009-03-15

A capacitively coupled radio-frequency (RF) plasma reactor was tested mainly for the purpose of solid waste treatment. It was found that using a RF input power between 1600 and 2000 W and a reactor pressure between 3000 and 8000 Pa (absolute pressure), a reactive plasma environment with a gas temperature between 1200 and 1800 K can be reached in this lab scale reactor. Under these conditions, pyrolysis of tire powder gave two product streams: a combustible gas and a pyrolytic char. The major components of the gas product are H{sub 2}, CO, CH{sub 4}, and CO{sub 2} The physical properties (surface area, porosity, and particle morphology) as well as chemical properties (elemental composition, heating value, and surface functional groups) of the pyrolytic char has also been examined. (author)

Application of capacitively coupled rf discharge plasma for sterilization of polymer materials used in ophthalmology

International Nuclear Information System (INIS)

Abdullin, I.Sh.; Avetisov, S.E.; Lipatov, D.V.; Rybakova, E.G.; Bragin, V.E.; Bykanov, A.N.; Kamarentsev, E.N.

1996-01-01

The sterilization effect of capacitively coupled rf discharge plasma treatment of contact lenses was investigated. There were used two types of polymer: highly hydrophilic polymer with water content 76% (Navelen-76) and poly-methylmethacrylate (PMMA). There was demonstrated the possibility of effective sterilization by RF discharge plasma of a set of polymer materials used in ophthalmology. The best results were obtained for hard contact lenses. There was perfect sterilization in this case. There were not perfect sterilization in some cases of soft contact lenses treatment. It may be caused by porous structure of the external layers of this material and limited thickness of the sterilization layer. (author)

Modeling methodology for a CMOS-MEMS electrostatic comb

Science.gov (United States)

Iyer, Sitaraman V.; Lakdawala, Hasnain; Mukherjee, Tamal; Fedder, Gary K.

2002-04-01

A methodology for combined modeling of capacitance and force 9in a multi-layer electrostatic comb is demonstrated in this paper. Conformal mapping-based analytical methods are limited to 2D symmetric cross-sections and cannot account for charge concentration effects at corners. Vertex capacitance can be more than 30% of the total capacitance in a single-layer 2 micrometers thick comb with 10 micrometers overlap. Furthermore, analytical equations are strictly valid only for perfectly symmetrical finger positions. Fringing and corner effects are likely to be more significant in a multi- layered CMOS-MEMS comb because of the presence of more edges and vertices. Vertical curling of CMOS-MEMS comb fingers may also lead to reduced capacitance and vertical forces. Gyroscopes are particularly sensitive to such undesirable forces, which therefore, need to be well-quantified. In order to address the above issues, a hybrid approach of superposing linear regression models over a set of core analytical models is implemented. Design of experiments is used to obtain data for capacitance and force using a commercial 3D boundary-element solver. Since accurate force values require significantly higher mesh refinement than accurate capacitance, we use numerical derivatives of capacitance values to compute the forces. The model is formulated such that the capacitance and force models use the same regression coefficients. The comb model thus obtained, fits the numerical capacitance data to within +/- 3% and force to within +/- 10%. The model is experimentally verified by measuring capacitance change in a specially designed test structure. The capacitance model matches measurements to within 10%. The comb model is implemented in an Analog Hardware Description Language (ADHL) for use in behavioral simulation of manufacturing variations in a CMOS-MEMS gyroscope.

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

Directory of Open Access Journals (Sweden)

Zhiqiang Zhang

2017-06-01

Full Text Available To achieve radio frequency (RF power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively.

Modeling and non-linear responses of MEMS capacitive accelerometer

Directory of Open Access Journals (Sweden)

Sri Harsha C.

2014-01-01

Full Text Available A theoretical investigation of an electrically actuated beam has been illustrated when the electrostatic-ally actuated micro-cantilever beam is separated from the electrode by a moderately large gap for two distinct types of geometric configurations of MEMS accelerometer. Higher order nonlinear terms have been taken into account for studying the pull in voltage analysis. A nonlinear model of gas film squeezing damping, another source of nonlinearity in MEMS devices is included in obtaining the dynamic responses. Moreover, in the present work, the possible source of nonlinearities while formulating the mathematical model of a MEMS accelerometer and their influences on the dynamic responses have been investigated. The theoretical results obtained by using MATLAB has been verified with the results obtained in FE software and has been found in good agreement. Criterion towards stable micro size accelerometer for each configuration has been investigated. This investigation clearly provides an understanding of nonlinear static and dynamics characteristics of electrostatically micro cantilever based device in MEMS.

n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

Science.gov (United States)

Zhang, Zhiqiang; Liao, Xiaoping

2017-06-17

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

Feasibility of frequency-modulated wireless transmission for a multi-purpose MEMS-based accelerometer.

Science.gov (United States)

Sabato, Alessandro; Feng, Maria Q

2014-09-05

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy--especially at very low frequencies--have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

Feasibility of Frequency-Modulated Wireless Transmission for a Multi-Purpose MEMS-Based Accelerometer

Directory of Open Access Journals (Sweden)

Alessandro Sabato

2014-09-01

Full Text Available Recent advances in the Micro Electro-Mechanical System (MEMS technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM of civil engineering structures. To date, sensors’ low sensitivity and accuracy—especially at very low frequencies—have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor’s analog signals are converted to digital signals before radio-frequency (RF wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F instead of the conventional Analog to Digital Conversion (ADC. In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

Multiband carbon monoxide laser (2.5 -- 4.0 and 5.0 -- 6.5 micron) pumped by capacitive slab RF discharge

Science.gov (United States)

Ionin, Andrey; Kozlov, Andrey; Seleznev, Leonid; Sinitsyn, Dmitry

2008-10-01

Overtone lasing and fundamental band tuning was for the first time obtained in a carbon monoxide laser excited by repetitively pulsed capacitive slab RF discharge (81.36 MHz). RF discharge pulse repetition rate was 100--500 Hz. The active volume was 3x30x250 cubic mm. Laser electrodes were cooled down to 120 K. Gas mixture CO:air:He at gas pressure 15 Torr was used. The optical scheme ``frequency selective master oscillator - laser amplifier'' was applied for getting fundamental band tuning. Single line lasing with average power up to several tens of mW was observed on about 100 rotational-vibrational transitions of CO molecule within the spectral range 5.0--6.5 micron. Multiline overtone lasing was observed on about 80 spectral lines within the spectral range 2.5-4.0 micron, with maximum single line average output power 12 mW. The total output power of the slab overtone CO laser came up to 0.35 W, with laser efficiency 0.5 percent. The results of parametric studies of capacitive slab RF discharge in carbon monoxide mixtures, and overtone and fundamental band CO laser characteristics are discussed.

On the Modeling of a MEMS Based Capacitive Accelerometer for Measurement of Tractor Seat Vibration

Directory of Open Access Journals (Sweden)

M. Alidoost

2010-04-01

Full Text Available Drivers of heavy vehicles often face with higher amplitudes of frequencies range between 1-80 Hz. Hence, this range of frequency results in temporary or even sometimes permanent damages to the health of drivers. Examples for these problems are damages to the vertebral column and early tiredness, which both reduce the driver’s performance significantly. One solution to this problem is to decrease the imposed vibration to the driver’s seat by developing an active seat system. These systems require an online measuring unit to sense vibrations transferred to the seat. The measuring unit can include a capacitive micro-accelerometer on the basis of MEMS which measure online vibrations on the seat. In this study, the mechanical behavior of a capacitive micro-accelerometer for the vibration range applied to a tractor seat has been simulated. The accelerometer is capable to measure step, impact and harmonic external excitations applied to the system. The results of the study indicate that, with increasing the applied voltage, the system sensitivity also increases, but the measuring range of vibrations decreases and vice versa. The modeled accelerometer, at damping ratio of 0.67 is capable to measure accelerations within the frequency range of lower than 130 Hz.

The effect of discharge chamber geometry on the characteristics of low-pressure RF capacitive discharges

Energy Technology Data Exchange (ETDEWEB)

Lisovskiy, V.A. [Ecole Polytech, Lab Phys and Technol Plasmas, F-91128 Palaiseau, (France); Booth, J.P. [Lam Res Corp, Fremont, CA 94538 (United States); Landry, K. [Unaxis, F-38100 Grenoble, (France); Douai, D. [CEA Cadarache, Dept Rech Fus Controlee, EURATOM Assoc, F-13108 St Paul Les Durance, (France); Cassagne, V. [Riber, F-95873 Bezons, (France); Yegorenkov, V.D. [Kharkov Natl Univ, Dept Phys, UA-61077 Kharkov, (Ukraine)

2007-07-01

We report the measured extinction curves and current voltage characteristics (CVCs) in several gases of RF capacitive discharges excited at 13.56 MHz in chambers of three different geometries: 1) parallel plates surrounded by a dielectric cylinder ('symmetric parallel plate'); 2) parallel plates surrounded by a metallic cylinder ('asymmetric confined'); and 3) parallel plates inside a much larger metallic chamber ('asymmetric unconfined'), similar to the gaseous electronics conference reference cell. The extinction curves and the CVCs show differences between the symmetric, asymmetric confined, and asymmetric unconfined chamber configurations. In particular, the discharges exist over a much broader range of RF voltages and gas pressures for the asymmetric unconfined chamber. For symmetric and asymmetric confined discharges, the extinction curves are close to each other in the regions near the minima and at lower pressure, but at higher pressure, the extinction curve of the asymmetric confined discharge runs at a lower voltage than the one for the discharge in a symmetric chamber. In the particular cases of an 'asymmetric unconfined chamber' discharge or 'asymmetric confined' one, the RF discharge experiences the transition from a 'weak-current' mode to a 'strong-current' one at lower RF voltages than is the case for a 'symmetric parallel-plate' discharge. (authors)

Reliable before-fabrication forecasting of normal and touch mode MEMS capacitive pressure sensor: modeling and simulation

Science.gov (United States)

Jindal, Sumit Kumar; Mahajan, Ankush; Raghuwanshi, Sanjeev Kumar

2017-10-01

An analytical model and numerical simulation for the performance of MEMS capacitive pressure sensors in both normal and touch modes is required for expected behavior of the sensor prior to their fabrication. Obtaining such information should be based on a complete analysis of performance parameters such as deflection of diaphragm, change of capacitance when the diaphragm deflects, and sensitivity of the sensor. In the literature, limited work has been carried out on the above-stated issue; moreover, due to approximation factors of polynomials, a tolerance error cannot be overseen. Reliable before-fabrication forecasting requires exact mathematical calculation of the parameters involved. A second-order polynomial equation is calculated mathematically for key performance parameters of both modes. This eliminates the approximation factor, and an exact result can be studied, maintaining high accuracy. The elimination of approximation factors and an approach of exact results are based on a new design parameter (δ) that we propose. The design parameter gives an initial hint to the designers on how the sensor will behave once it is fabricated. The complete work is aided by extensive mathematical detailing of all the parameters involved. Next, we verified our claims using MATLAB® simulation. Since MATLAB® effectively provides the simulation theory for the design approach, more complicated finite element method is not used.

A Musical instrument in MEMS

NARCIS (Netherlands)

Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, H.; Beekman, J.G.; Been, A.J.; Folkertsma, Gerrit Adriaan; Folkertsma, G.A.; Fortgens, L.; de Graaf, D.; Vocke, S.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

In this work we describe a MEMS instrument that resonates at audible frequencies, and with which music can be made. The sounds are generated by mechanical resonators and capacitive displacement sensors. Damping by air scales unfavourably for generating audible frequencies with small devices.

The collisional capacitive RF sheath and the assumption of a sharp electron edge

Science.gov (United States)

Brinkmann, Ralf Peter

2008-10-01

The transition from quasi-neutrality to charge depletion is one of the characteristic features of the plasma boundary sheath. It is often described in terms of the so-called step model which assumes a transition point (electron step) where the electron density drops from a value equal to the ion density (in the bulk) to a value of zero (in the sheath). Inserted into Poisson's equation, the step model yields an expression for the field which is realistic deep in the sheath but fails to merge correctly into the ambipolar field of the bulk. This work studies the consequences of that approximation for the example of the collision-dominated, capacitive RF sheath by Lieberman [1]. First, the model is solved exactly, using a relaxation scheme. Then, the step approximation is applied which recovers Lieberman's semi-analytical solution. It is demonstrated that the step approximation induces a spurious divergence of the ion density at the sheath edge and prevents a matching of the sheath model to a bulk model. Integral sheath quantities, on the other hand, like the capacitance or the overall voltage drop, are faithfully reproduced. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16, pp. 638-644 (1988).

Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

Science.gov (United States)

Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

2017-11-01

This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

CMOS MEMS capacitive absolute pressure sensor

International Nuclear Information System (INIS)

Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

2013-01-01

This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

Mechanism for heating of nitrogen plasmas in an electrodeless rf capacitive discharge at medium pressures

International Nuclear Information System (INIS)

Berdichevskii, M.G.; Marusin, V.V.

1979-01-01

The possible contributions of several processes to the experimentally observed heating of nitrogen plasmas in an electarodeless rf capacitive discharge at pressures of p=2.7-67 kPa are discussed. These processes are electron-rotational, vibrational--translational (V--T), and nonresonance vibrational--vibrational (V--V) energy exchange and effects due to O 2 , H 2 O, and NO impurities in the gas. It is shown that as the pressure is decreased the heating mechanism changes from quasiequilibrium to nonequilibrium V--T heating caused by overpopulation of high vibrational levels in the ground state of the nitrogen molecule

Investigating ESD sensitivity in electrostatic SiGe MEMS

International Nuclear Information System (INIS)

Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

2010-01-01

The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

MEMS based monolithic Phased array using 3-bit Switched-line Phase Shifter

Directory of Open Access Journals (Sweden)

A. Karmakr

2017-10-01

Full Text Available This article details the design of an electronically scanning phased array antenna with proposed fabrication process steps. Structure is based upon RF micro-electromechanical system (MEMS technology. Capacitive type shunt switches have been implemented here to cater high frequency operation. The architecture, which is deigned at 30 GHz, consists of 3-bit (11.25º, 22.5º and 45º integrated Switched-line phase shifter and a linearly polarized microstrip patch antenna. Detailed design tricks of the Ka-band phase shifter is outlined here. The whole design is targeted for future monolithic integration. So, the substrate of choice is High Resistive Silicon (ρ > 8kΩ-cm, tan δ =0.01 and ϵr =11.8. The overall circuit occupies an cross-sectional area of 20 × 5 mm2. The simulated results show that the phase shifter can provide nearly 11.25º/22.5º/45º phase shifts and their combinations at the expense of 1dB average insertion loss at 30 GHz for eight combinations. Practical fabrication process flow using surface micromachining is proposed here. Critical dimensions of the phased array structure is governed by the deign rules of the standard CMOS/MEMS foundry.

RF MEMS suspended band-stop resonator and filter for frequency and bandwidth continuous fine tuning

International Nuclear Information System (INIS)

Jang, Yun-Ho; Kim, Yong-Kweon; Llamas-Garro, Ignacio; Kim, Jung-Mu

2012-01-01

We firstly propose the concept of a frequency and bandwidth fine-tuning method using an RF MEMS-based suspended tunable band-stop resonator. We experimentally show the feasibility of the continuously tuned resonator, including a second-order filter, which consists of cascaded resonators to achieve center frequency and bandwidth fine tuning. The structure consists of a freestanding half-wavelength (λ/2) resonator connected to a large displacement comb actuator. The lateral movement of the λ/2 resonator over the main transmission line produces different electromagnetic decoupling values from the main transmission line. The decoupled energy leads to continuous center frequency and bandwidth tuning using the band-stop resonator circuit for fine-tuning applications. The freestanding λ/2 resonator plays the role of a variable capacitor as well as a decoupling resonator in the proposed structure. The fabricated tunable filter shows suitability for Ku-band wireless communication system applications with continuous reconfiguration

A robust parasitic-insensitive successive approximation capacitance-to-digital converter

KAUST Repository

Omran, Hesham

2014-09-01

In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

A robust parasitic-insensitive successive approximation capacitance-to-digital converter

KAUST Repository

Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

2014-01-01

In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

Uncertainty in microscale gas damping: Implications on dynamics of capacitive MEMS switches

International Nuclear Information System (INIS)

Alexeenko, Alina; Chigullapalli, Sruti; Zeng Juan; Guo Xiaohui; Kovacs, Andrew; Peroulis, Dimitrios

2011-01-01

Effects of uncertainties in gas damping models, geometry and mechanical properties on the dynamics of micro-electro-mechanical systems (MEMS) capacitive switch are studied. A sample of typical capacitive switches has been fabricated and characterized at Purdue University. High-fidelity simulations of gas damping on planar microbeams are developed and verified under relevant conditions. This and other gas damping models are then applied to study the dynamics of a single closing event for switches with experimentally measured properties. It has been demonstrated that although all damping models considered predict similar damping quality factor and agree well for predictions of closing time, the models differ by a factor of two and more in predicting the impact velocity and acceleration at contact. Implications of parameter uncertainties on the key reliability-related parameters such as the pull-in voltage, closing time and impact velocity are discussed. A notable effect of uncertainty is that the nominal switch, i.e. the switch with the average properties, does not actuate at the mean actuation voltage. Additionally, the device-to-device variability leads to significant differences in dynamics. For example, the mean impact velocity for switches actuated under the 90%-actuation voltage (about 150 V), i.e. the voltage required to actuate 90% of the sample, is about 129 cm/s and increases to 173 cm/s for the 99%-actuation voltage (of about 173 V). Response surfaces of impact velocity and closing time to five input variables were constructed using the Smolyak sparse grid algorithm. The sensitivity analysis showed that impact velocity is most sensitive to the damping coefficient whereas the closing time is most affected by the geometric parameters such as gap and beam thickness. - Highlights: → We examine stochastic non-linear response of a microsystem switch subject to multiple input uncertainties. → Sample devices have been fabricated and device

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

International Nuclear Information System (INIS)

Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

2011-01-01

This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

High-throughput anisotropic plasma etching of polyimide for MEMS

International Nuclear Information System (INIS)

Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

2011-01-01

This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

Control of Bouncing in MEMS Switches Using Double Electrodes

KAUST Repository

Abdul Rahim, Farhan; Younis, Mohammad I.

2016-01-01

This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both

A Novel Technique for Design of Ultra High Tunable Electrostatic Parallel Plate RF MEMS Variable Capacitor

Science.gov (United States)

Baghelani, Masoud; Ghavifekr, Habib Badri

2017-12-01

This paper introduces a novel method for designing of low actuation voltage, high tuning ratio electrostatic parallel plate RF MEMS variable capacitors. It is feasible to achieve ultra-high tuning ratios way beyond 1.5:1 barrier, imposed by pull-in effect, by the proposed method. The proposed method is based on spring strengthening of the structure just before the unstable region. Spring strengthening could be realized by embedding some dimples on the spring arms with the precise height. These dimples shorten the spring length when achieved to the substrate. By the proposed method, as high tuning ratios as 7.5:1 is attainable by only considering four dimple sets. The required actuation voltage for this high tuning ratio is 14.33 V which is simply achievable on-chip by charge pump circuits. Brownian noise effect is also discussed and mechanical natural frequency of the structure is calculated.

Passive inference of collision frequency in magnetized capacitive argon discharge

Science.gov (United States)

Binwal, S.; Joshi, J. K.; Karkari, S. K.; Kaw, P. K.; Nair, L.

2018-03-01

A non-invasive method of determining the collision frequency νm by measuring the net plasma impendence in a magnetized, capacitive-coupled, radio-frequency (rf) discharge circuit is developed. The collision frequency has been analytically expressed in terms of bulk plasma reactance, wherein standard sheath models have been used to estimate the reactance offered due to the capacitive rf sheaths at the discharge plates. The experimental observations suggest that in the un-magnetized case, νm remains constant over a range of rf current but steadily increases as the background pressure reduces. In the magnetized case, the collision frequency has been observed to decay with the increase in rf current while it remains unaffected by the background pressure. A qualitative discussion has been presented to explain these characteristics.

Micromachined high-performance RF passives in CMOS substrate

International Nuclear Information System (INIS)

Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

2016-01-01

This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

A MEMS-based, wireless, biometric-like security system

Science.gov (United States)

Cross, Joshua D.; Schneiter, John L.; Leiby, Grant A.; McCarter, Steven; Smith, Jeremiah; Budka, Thomas P.

2010-04-01

We present a system for secure identification applications that is based upon biometric-like MEMS chips. The MEMS chips have unique frequency signatures resulting from fabrication process variations. The MEMS chips possess something analogous to a "voiceprint". The chips are vacuum encapsulated, rugged, and suitable for low-cost, highvolume mass production. Furthermore, the fabrication process is fully integrated with standard CMOS fabrication methods. One is able to operate the MEMS-based identification system similarly to a conventional RFID system: the reader (essentially a custom network analyzer) detects the power reflected across a frequency spectrum from a MEMS chip in its vicinity. We demonstrate prototype "tags" - MEMS chips placed on a credit card-like substrate - to show how the system could be used in standard identification or authentication applications. We have integrated power scavenging to provide DC bias for the MEMS chips through the use of a 915 MHz source in the reader and a RF-DC conversion circuit on the tag. The system enables a high level of protection against typical RFID hacking attacks. There is no need for signal encryption, so back-end infrastructure is minimal. We believe this system would make a viable low-cost, high-security system for a variety of identification and authentication applications.

RF and microwave microelectronics packaging II

CERN Document Server

Sturdivant, Rick

2017-01-01

Reviews RF, microwave, and microelectronics assembly process, quality control, and failure analysis Bridges the gap between low cost commercial and hi-res RF/Microwave packaging technologies Engages in an in-depth discussion of challenges in packaging and assembly of advanced high-power amplifiers This book presents the latest developments in packaging for high-frequency electronics. It is a companion volume to “RF and Microwave Microelectronics Packaging” (2010) and covers the latest developments in thermal management, electrical/RF/thermal-mechanical designs and simulations, packaging and processing methods, and other RF and microwave packaging topics. Chapters provide detailed coverage of phased arrays, T/R modules, 3D transitions, high thermal conductivity materials, carbon nanotubes and graphene advanced materials, and chip size packaging for RF MEMS. It appeals to practicing engineers in the electronic packaging and high-frequency electronics domain, and to academic researchers interested in underst...

Revisiting the Anomalous rf Field Penetration into a Warm Plasma

International Nuclear Information System (INIS)

Kaganovich, Igor D.; Polomarov, Oleg V.; Theodosiou, Constantine E.

2005-01-01

Radio-frequency [rf] waves do not penetrate into a plasma and are damped within it. The electric field of the wave and plasma current are concentrated near the plasma boundary in a skin layer. Electrons can transport the plasma current away from the skin layer due to their thermal motion. As a result, the width of the skin layer increases when electron temperature effects are taken into account. This phenomenon is called anomalous skin effect. The anomalous penetration of the rf electric field occurs not only for transversely propagating to the plasma boundary wave (inductively coupled plasmas) but also for the wave propagating along the plasma boundary (capacitively coupled plasmas). Such anomalous penetration of the rf field modifies the structure of the capacitive sheath. Recent advances in the nonlinear, non-local theory of the capacitive sheath are reported. It is shown that separating the electric field profile into exponential and non-exponential parts yields an efficient qualitative and quantitative description of the anomalous skin effect in both inductively and capacitively coupled plasma

Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems

Science.gov (United States)

Francis, Laurent A.; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis

2013-03-01

The impact of different types of radiation on the electromechanical properties of materials used in microfabrication and on the capacitive and piezoresistive transduction mechanisms of MEMS is investigated. MEMS technologies could revolutionize avionics, satellite and space applications provided that the stress conditions which can compromise the reliability of microsystems in these environments are well understood. Initial tests with MEMS revealed a vulnerability of some types of devices to radiation induced dielectric charging, a physical mechanism which also affects microelectronics, however integration of novel functional materials in microfabrication and the current trend to substitute SiO2 with high-k dielectrics in ICs pose new questions regarding reliability in radiation environments. The performance of MEMS devices with moving parts could also degrade due to radiation induced changes in the mechanical properties of the materials. It is thus necessary to investigate the effects of radiation on the properties of thin films used in microfabrication and here we report on tests with γ, high energy protons and fast neutrons radiation. Prototype SOI based MEMS magnetometers which were developed in UCL are also used as test vehicles to investigate radiation effects on the reliability of magnetically actuated and capacitively coupled MEMS.

CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

KAUST Repository

Abdul Rahim, Farhan

2014-01-01

MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions

Electroplating of low stress permalloy for MEMS

International Nuclear Information System (INIS)

Zhang Yonghua; Ding Guifu; Cai Yuli; Wang Hong; Cai Bingchu

2006-01-01

With the wafer-bending method and spectrophotometry, the internal stress in electroplated Ni-Fe alloy for MEMS has been investigated as a function of bath concentration. This investigation demonstrated that low concentration plating solution is useful for the decrease of the residual stress in the electrodeposits, and the stress could further decrease with an increase of saccharin additive content. And the change of stress from tensile to compressive was not observed with the increase of the additive content in plating path. The low stress permalloy (Ni 81 Fe 19 ) was reached in our experimental conditions. A bistable electromagnetic RF MEMS switch with deformation-free bilayer cantilever beam was fabricated successfully by electroplated permalloy

Packaging of MEMS/MOEMS and nanodevices: reliability, testing, and characterization aspects

Science.gov (United States)

Tekin, Tolga; Ngo, Ha-Duong; Wittler, Olaf; Bouhlal, Bouchaib; Lang, Klaus-Dieter

2011-02-01

The last decade witnessed an explosive growth in research and development efforts devoted to MEMS devices and packaging. The successfully developed MEMS devices are, for example inkjet, pressure sensors, silicon microphones, accelerometers, gyroscopes, MOEMS, micro fuel cells and emerging MEMS. For the next decade, MEMS/MOEMS and nanodevice based products will penetrate into IT, telecommunications, automotive, defense, life sciences, medical and implantable applications. Forecasts say the MEMS market to be $14 billion by 2012. The packaging cost of MEMS/MOEMS products in general is about 70 percent. Unlike today's electronics IC packaging, their packaging are custom-built and difficult due to the moving structural elements. In order for the moving elements of a MEMS device to move effectively in a well-controlled atmosphere, hermetic sealing of the MEMS device in a cap is necessary. For some MEMS devices, such as resonators and gyroscopes, vacuum packaging is required. Usually, the cap is processed at the wafer level, and thus MEMS packaging is truly a wafer level packaging. In terms of MEMS/MOEMS and nanodevice packaging, there are still many critical issues need to be addressed due to the increasing integration density supported by 3D heterogeneous integration of multi-physic components/layers consisting of photonics, electronics, rf, plasmonics, and wireless. The infrastructure of MEMS/MOEMS and nanodevices and their packaging is not well established yet. Generic packaging platform technologies are not available. Some of critical issues have been studied intensively in the last years. In this paper we will discuss about processes, reliability, testing and characterization of MEMS/MOEMS and nanodevice packaging.

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

Science.gov (United States)

Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

2017-12-01

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

Directory of Open Access Journals (Sweden)

J. Upadhyay

2017-12-01

Full Text Available An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Enabling MEMS technologies for communications systems

Science.gov (United States)

Lubecke, Victor M.; Barber, Bradley P.; Arney, Susanne

2001-11-01

Modern communications demands have been steadily growing not only in size, but sophistication. Phone calls over copper wires have evolved into high definition video conferencing over optical fibers, and wireless internet browsing. The technology used to meet these demands is under constant pressure to provide increased capacity, speed, and efficiency, all with reduced size and cost. Various MEMS technologies have shown great promise for meeting these challenges by extending the performance of conventional circuitry and introducing radical new systems approaches. A variety of strategic MEMS structures including various cost-effective free-space optics and high-Q RF components are described, along with related practical implementation issues. These components are rapidly becoming essential for enabling the development of progressive new communications systems technologies including all-optical networks, and low cost multi-system wireless terminals and basestations.

Development, characterization and application of compact spectrometers based on MEMS with in-plane capacitive drives

Science.gov (United States)

Kenda, A.; Kraft, M.; Tortschanoff, A.; Scherf, Werner; Sandner, T.; Schenk, Harald; Luettjohann, Stephan; Simon, A.

2014-05-01

With a trend towards the use of spectroscopic systems in various fields of science and industry, there is an increasing demand for compact spectrometers. For UV/VIS to the shortwave near-infrared spectral range, compact hand-held polychromator type devices are widely used and have replaced larger conventional instruments in many applications. Still, for longer wavelengths this type of compact spectrometers is lacking suitable and affordable detector arrays. In perennial development Carinthian Tech Research AG together with the Fraunhofer Institute for Photonic Microsystems endeavor to close this gap by developing spectrometer systems based on photonic MEMS. Here, we review on two different spectrometer developments, a scanning grating spectrometer working in the NIR and a FT-spectrometer accessing the mid-IR range up to 14 μm. Both systems are using photonic MEMS devices actuated by in-plane comb drive structures. This principle allows for high mechanical amplitudes at low driving voltages but results in gratings respectively mirrors oscillating harmonically. Both systems feature special MEMS structures as well as aspects in terms of system integration which shall tease out the best possible overall performance on the basis of this technology. However, the advantages of MEMS as enabling technology for high scanning speed, miniaturization, energy efficiency, etc. are pointed out. Whereas the scanning grating spectrometer has already evolved to a product for the point of sale analysis of traditional Chinese medicine products, the purpose of the FT-spectrometer as presented is to demonstrate what is achievable in terms of performance. Current developments topics address MEMS packaging issues towards long term stability, further miniaturization and usability.

Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

KAUST Repository

Chandran, Akhil A.

2016-09-15

Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator\\'s nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli\\'s beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

KAUST Repository

Chandran, Akhil A.; Younis, Mohammad I.

2016-01-01

Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator's nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli's beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

Resonant Magnetic Field Sensors Based On MEMS Technology

Directory of Open Access Journals (Sweden)

Elías Manjarrez

2009-09-01

Full Text Available Microelectromechanical systems (MEMS technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration.

Resonant Magnetic Field Sensors Based On MEMS Technology

Science.gov (United States)

Herrera-May, Agustín L.; Aguilera-Cortés, Luz A.; García-Ramírez, Pedro J.; Manjarrez, Elías

2009-01-01

Microelectromechanical systems (MEMS) technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI) and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration. PMID:22408480

Effect of capacitive feedback on the characteristics of direct current superconducting quantum interference device coupled to a multiturn input coil

International Nuclear Information System (INIS)

Minotani, T.; Enpuku, K.; Kuroki, Y.

1997-01-01

Distortion of voltage versus flux (V endash Φ) relation of a dc superconducting quantum interference device (SQUID) coupled to a multiturn input coil is studied. First, resonant behavior of the coupled SQUID due to the so-called input coil resonance is clarified. It is shown that large rf noise flux is produced by the input coil resonance. This rf flux is added to the SQUID, and results in large rf voltage across the SQUID. In the case where parasitic capacitance exists between the input coil and the ground of the SQUID, this rf voltage produces the rf flux again, i.e., a feedback loop for the rf flux is formed. Taking into account this capacitive feedback, we study the V endash Φ relation of the coupled SQUID. Numerical simulation shows that the V endash Φ relation is distorted considerably by the feedback mechanism. The simulation result explains well the experimental V endash Φ relation of the coupled SQUID. The combination of the input coil resonance with the capacitive feedback is the most likely mechanism for the distorted V endash Φ curve of the coupled SQUID. The condition for occurrence of the distorted V endash Φ curve due to the capacitive feedback is also obtained, and methods to prevent degradation are discussed. copyright 1997 American Institute of Physics

A versatile multi-user polyimide surface micromachinning process for MEMS applications

KAUST Repository

Carreno, Armando Arpys Arevalo

2015-04-01

This paper reports a versatile multi-user micro-fabrication process for MEMS devices, the \\'Polyimide MEMS Multi-User Process\\' (PiMMPs). The reported process uses polyimide as the structural material and three separate metallization layers that can be interconnected depending on the desired application. This process enables for the first time the development of out-of-plane compliant mechanisms that can be designed using six different physical principles for actuation and sensing on a wafer from a single fabrication run. These principles are electrostatic motion, thermal bimorph actuation, capacitive sensing, magnetic sensing, thermocouple-based sensing and radio frequency transmission and reception. © 2015 IEEE.

Passive RF component technology materials, techniques, and applications

CERN Document Server

Wang, Guoan

2012-01-01

Focusing on novel materials and techniques, this pioneering volume provides you with a solid understanding of the design and fabrication of smart RF passive components. You find comprehensive details on LCP, metal materials, ferrite materials, nano materials, high aspect ratio enabled materials, green materials for RFID, and silicon micromachining techniques. Moreover, this practical book offers expert guidance on how to apply these materials and techniques to design a wide range of cutting-edge RF passive components, from MEMS switch based tunable passives and 3D passives, to metamaterial-bas

A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

NARCIS (Netherlands)

Groen, Maarten; Wu, Kai; Brookhuis, Robert Anton; van Houwelingen, Marc J.; Brouwer, Dannis Michel; Lötters, Joost Conrad; Wiegerink, Remco J.

2014-01-01

We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve.

SOI silicon on glass for optical MEMS

DEFF Research Database (Denmark)

Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

2003-01-01

and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

Modelling of an RF plasma shower

NARCIS (Netherlands)

Atanasova, M.; Carbone, E.A.D.; Mihailova, D.B.; Benova, E.; Degrez, G.; Mullen, van der J.J.A.M.

2012-01-01

A capacitive radiofrequency (RF) discharge at atmospheric pressure is studied by means of a time-dependent, two-dimensional fluid model. The plasma is created in a stationary argon gas flow guided through two perforated electrodes, hence resembling a shower. The inner electrode, the electrode facing

Effect of power modulation on properties of pulsed capacitively coupled radiofrequency discharges

International Nuclear Information System (INIS)

Samara, V; Bowden, M D; Braithwaite, N St J

2010-01-01

We describe measurements of plasma properties of pulsed, low pressure, capacitively coupled discharges operated in argon. The study aims to determine the effect of modulating the radiofrequency power during the discharge part of the pulse cycle. Measurements of local electron density and optical emission were made in capacitively coupled rf discharges generated in a Gaseous Electronics Conference (GEC) reference reactor. Gas pressure was in the range 7-70 Pa, rf power in the range 1-100 W and pulse durations in the range 10 μs-100 ms. The results indicate that the ignition and afterglow decay processes in pulsed discharges can be controlled by modulating the shape of applied radiofrequency pulse.

A Flexible Capacitive Sensor with Encapsulated Liquids as Dielectrics

Directory of Open Access Journals (Sweden)

Yasunari Hotta

2012-03-01

Full Text Available Flexible and high-sensitive capacitive sensors are demanded to detect pressure distribution and/or tactile information on a curved surface, hence, wide varieties of polymer-based flexible MEMS sensors have been developed. High-sensitivity may be achieved by increasing the capacitance of the sensor using solid dielectric material while it deteriorates the flexibility. Using air as the dielectric, to maintain the flexibility, sacrifices the sensor sensitivity. In this paper, we demonstrate flexible and highly sensitive capacitive sensor arrays that encapsulate highly dielectric liquids as the dielectric. Deionized water and glycerin, which have relative dielectric constants of approximately 80 and 47, respectively, could increase the capacitance of the sensor when used as the dielectric while maintaining flexibility of the sensor with electrodes patterned on flexible polymer substrates. A reservoir of liquids between the electrodes was designed to have a leak path, which allows the sensor to deform despite of the incompressibility of the encapsulated liquids. The proposed sensor was microfabricated and demonstrated successfully to have a five times greater sensitivity than sensors that use air as the dielectric.

10–25 GHz frequency reconfigurable MEMS 5-bit phase shifter using push–pull actuator based toggle mechanism

International Nuclear Information System (INIS)

Dey, Sukomal; Koul, Shiban K

2015-01-01

This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using radio frequency microelectromechanical system (RF MEMS) technology. The phase shifter is based on the distributed MEMS transmission line (DMTL) concept utilizing a MEMS varactor. The main source of frequency tuning in this work is a bridge actuation mechanism followed by capacitance variation. Two stages of actuation mechanisms (push and pull) are used to achieve a 2:1 tuning ratio. Accurate control of the actuation voltage between the pull to push stages contributes differential phase shift over the band of interest. The functional behavior of the push–pull actuation over the phase shifter application is theoretically established, experimentally investigated and validated with simulation. The phase shifter is fabricated monolithically using a gold based surface micromachining process on an alumina substrate. The individual primary phase-bits (11.25°/22.5°/45°/90°/180°) that are the fundamental building blocks of the complete 5-bit phase shifter are designed, fabricated and experimentally characterized from 10–25 GHz for specific applications. Finally, the complete 5-bit phase shifter demonstrates an average phase error of 4.32°, 2.8°, 1° and 1.58°, an average insertion loss of 3.76, 4.1, 4.2 and 4.84 dB and an average return loss of 11.7, 12, 14 and 11.8 dB at 10, 12, 17.2 and 25 GHz, respectively. To the best of the authors’ knowledge, this is the first reported band tunable stand alone 5-bit phase shifter in the literature which can work over the large spectrum for different applications. The total area of the 5-bit phase shifter is 15.6 mm 2 . Furthermore, the cold-switched reliability of the unit cell and the complete 5-bit MEMS phase shifter are extensively investigated and presented. (paper)

Capacitively coupled radio-frequency discharges in nitrogen at low pressures

KAUST Repository

Alves, Luí s Lemos; Marques, Luí s S A; Pintassilgo, Carlos D.; Wattieaux, Gaë tan; Es-sebbar, Et-touhami; Berndt, Johannes; Kovačević, Eva; Carrasco, Nathalie; Boufendi, Laï fa; Cernogora, Guy

2012-01-01

This paper uses experiments and modelling to study capacitively coupled radio-frequency (rf) discharges in pure nitrogen, at 13.56MHz frequency, 0.11 mbar pressures and 230W coupled powers. Experiments performed on two similar (not twin) setups

A Micromechanical RF Channelizer

Science.gov (United States)

Akgul, Mehmet

The power consumption of a radio generally goes as the number and strength of the RF signals it must process. In particular, a radio receiver would consume much less power if the signal presented to its electronics contained only the desired signal in a tiny percent bandwidth frequency channel, rather than the typical mix of signals containing unwanted energy outside the desired channel. Unfortunately, a lack of filters capable of selecting single channel bandwidths at RF forces the front-ends of contemporary receivers to accept unwanted signals, and thus, to operate with sub-optimal efficiency. This dissertation focuses on the degree to which capacitive-gap transduced micromechanical resonators can achieve the aforementioned RF channel-selecting filters. It aims to first show theoretically that with appropriate scaling capacitive-gap transducers are strong enough to meet the needed coupling requirements; and second, to fully detail an architecture and design procedure needed to realize said filters. Finally, this dissertation provides an actual experimentally demonstrated RF channel-select filter designed using the developed procedures and confirming theoretical predictions. Specifically, this dissertation introduces four methods that make possible the design and fabrication of RF channel-select filters. The first of these introduces a small-signal equivalent circuit for parallel-plate capacitive-gap transduced micromechanical resonators that employs negative capacitance to model the dependence of resonance frequency on electrical stiffness in a way that facilitates the analysis of micromechanical circuits loaded with arbitrary electrical impedances. The new circuit model not only correctly predicts the dependence of electrical stiffness on the impedances loading the input and output electrodes of parallel-plate capacitive-gap transduced micromechanical device, but does so in a visually intuitive way that identifies current drive as most appropriate for

RF sheaths for arbitrary B field angles

Science.gov (United States)

D'Ippolito, Daniel; Myra, James

2014-10-01

RF sheaths occur in tokamaks when ICRF waves encounter conducting boundaries and accelerate electrons out of the plasma. Sheath effects reduce the efficiency of ICRF heating, cause RF-specific impurity influxes from the edge plasma, and increase the plasma-facing component damage. The rf sheath potential is sensitive to the angle between the B field and the wall, the ion mobility and the ion magnetization. Here, we obtain a numerical solution of the non-neutral rf sheath and magnetic pre-sheath equations (for arbitrary values of these parameters) and attempt to infer the parametric dependences of the Child-Langmuir law. This extends previous work on the magnetized, immobile ion regime. An important question is how the rf sheath voltage distributes itself between sheath and pre-sheath for various B field angles. This will show how generally previous estimates of the rf sheath voltage and capacitance were reasonable, and to improve the RF sheath BC. Work supported by US DOE grants DE-FC02-05ER54823 and DE-FG02-97ER54392.

Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

KAUST Repository

Elshurafa, Amro M.

2012-07-23

In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single-layer MEMS fractal capacitors. Explicitly, a capacitor with a woven structure and another with an interleaved configuration were fabricated in the standard PolyMUMPS surface micromachining process and tested at S-band frequencies. The self-resonant frequencies of the fabricated capacitors were close to 10GHz, which is better than that of the parallel-plate capacitor, which measured only 5.5GHz. Further, the presented capacitors provided a higher capacitance when compared with the state-of-the-art-reported MEMS fractal capacitors created using a single layer at the expense of a lower quality factor. © 2012 The Institution of Engineering and Technology.

Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

KAUST Repository

Elshurafa, Amro M.

2013-08-16

In this paper, we model, fabricate, and measure an electrostatically actuated MEMS variable capacitor that utilizes a fractal geometry and serpentine-like suspension arms. Explicitly, a variable capacitor that possesses a top suspended plate with a specific fractal geometry and also possesses a bottom fixed plate complementary in shape to the top plate has been fabricated in the PolyMUMPS process. An important benefit that was achieved from using the fractal geometry in designing the MEMS variable capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement results show that the tuning range is 2.5 at a maximum actuation voltage of 10V.

Fundamental Study of a Combined Hyperthermia System with RF Capacitive Heating and Interstitial Heating

OpenAIRE

Saitoh, Yoshiaki; Hori, Junichi; 斉藤, 義明; 堀, 潤一

2001-01-01

Interstitial RF heating with an inserted electrode allows the heating position selection in a subject, but the narrow heating region is problematic. This study elucidates development of new interstitial RF heating methods, combining with external RF heating using paired electrodes, heating the subject broadly in advance in order to selectively extend the heating region. Two kinds of heating system were developed by controlling a differential mode and a common mode of RF currents. Heating expe...

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

Science.gov (United States)

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

Ion flux nonuniformities in large-area high-frequency capacitive discharges

International Nuclear Information System (INIS)

Perret, A.; Chabert, P.; Booth, J.-P.; Jolly, J.; Guillon, J.; Auvray, Ph.

2003-01-01

Strong nonuniformities of plasma production are expected in capacitive discharges if the excitation wavelength becomes comparable to the reactor size (standing-wave effect) and/or if the plasma skin depth becomes comparable to the plate separation (skin effect) [M. A. Lieberman et al., Plasma Sources Sci. Technol. 11, 283 (2002)]. Ion flux uniformity measurements were carried out in a large-area square (40 cmx40 cm) capacitive discharge driven at frequencies between 13.56 MHz and 81.36 MHz in argon gas at 150 mTorr. At 13.56 MHz, the ion flux was uniform to ±5%. At 60 MHz (and above) and at low rf power, the standing-wave effect was seen (maximum of the ion flux at the center), in good quantitative agreement with theory. At higher rf power, maxima of the ion flux were observed at the edges, due either to the skin effect or to other edge effects

A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

Science.gov (United States)

Groen, Maarten S.; Wu, Kai; Brookhuis, Robert A.; van Houwelingen, Marc J.; Brouwer, Dannis M.; Lötters, Joost C.; Wiegerink, Remco J.

2014-12-01

We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch.

A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

International Nuclear Information System (INIS)

Groen, Maarten S; Wu, Kai; Brookhuis, Robert A; Lötters, Joost C; Wiegerink, Remco J; Van Houwelingen, Marc J; Brouwer, Dannis M

2014-01-01

We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch. (paper)

Simulation of a low frequency Z-axis SU-8 accelerometer in coventorware and MEMS+

KAUST Repository

Carreno, Armando Arpys Arevalo

2013-04-01

This paper presents the simulation of a z-axis SU-8 capacitive accelerometer. The study consists of a modal analysis of the modeled accelerometer, a study relating capacitance to acceleration, capacitance to deflection, an effective spring constant calculation, and a comparison of results achieved using CoventorWare® ANALYZER™ and MEMS+®. A fabricated energy harvester design from [1] was used for modeling and simulation in this study, with a four spring attachment of a 650μm×650μm; ×110μm proof mass of 4.542×10-8 kg. At rest, the spacing between electrodes is 4μm along the z-axis, and at 1.5g acceleration, there is 1.9μm spacing between electrodes, at which point pull in occurs for a 1V voltage. © 2013 IEEE.

Plasma diagnosis of RF discharge by using impedance measurement

International Nuclear Information System (INIS)

Huang Jianjun; Teuner, D.

2001-01-01

It is presented that the method known from network analysis with home-made probe and experimental setup to measure current, voltage and phase angle of RF discharge in He gas more accurately. The sheath thickness and the real and imaginary parts of the plasma impedance were obtained by using the equivalent circuit model and taking account stray capacitances of the set-up. In addition, making use of Godyak's RF discharge simple model, the electron density in the discharge was calculated at different pressure and current density

Low voltage RF MEMS variable capacitor with linear C-V response

KAUST Repository

Elshurafa, Amro M.; Ho, Pak Hung; Salama, Khaled N.

2012-01-01

.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom

Nonlinear dynamic modeling of a V-shaped metal based thermally driven MEMS actuator for RF switches

Science.gov (United States)

Bakri-Kassem, Maher; Dhaouadi, Rached; Arabi, Mohamed; Estahbanati, Shahabeddin V.; Abdel-Rahman, Eihab

2018-05-01

In this paper, we propose a new dynamic model to describe the nonlinear characteristics of a V-shaped (chevron) metallic-based thermally driven MEMS actuator. We developed two models for the thermal actuator with two configurations. The first MEMS configuration has a small tip connected to the shuttle, while the second configuration has a folded spring and a wide beam attached to the shuttle. A detailed finite element model (FEM) and a lumped element model (LEM) are proposed for each configuration to completely characterize the electro-thermal and thermo-mechanical behaviors. The nonlinear resistivity of the polysilicon layer is extracted from the measured current-voltage (I-V) characteristics of the actuator and the simulated corresponding temperatures in the FEM model, knowing the resistivity of the polysilicon at room temperature from the manufacture’s handbook. Both developed models include the nonlinear temperature-dependent material properties. Numerical simulations in comparison with experimental data using a dedicated MEMS test apparatus verify the accuracy of the proposed LEM model to represent the complex dynamics of the thermal MEMS actuator. The LEM and FEM simulation results show an accuracy ranging from a maximum of 13% error down to a minimum of 1.4% error. The actuator with the lower thermal load to air that includes a folded spring (FS), also known as high surface area actuator is compared to the actuator without FS, also known as low surface area actuator, in terms of the I-V characteristics, power consumption, and experimental static and dynamic responses of the tip displacement.

7.9 pJ/Step Energy-Efficient Multi-Slope 13-bit Capacitance-to-Digital Converter

KAUST Repository

Omran, Hesham

2014-08-01

In this brief, an energy-efficient capacitance-to-digital converter (CDC) is presented. The proposed CDC uses digitally controlled coarse-fine multi-slope integration to digitize a wide range of capacitance in short conversion time. Both integration current and frequency are scaled, which leads to significant improvement in the energy efficiency of both analog and digital circuitry. Mathematical analysis for circuit nonidealities, noise, and improvement in energy efficiency is provided. A prototype fabricated in a 0.35-μm CMOS process occupies 0.09 mm2 and consumes a total of 153 μA from 3.3 V supply while achieving 13-bit resolution. The operation of the prototype is experimentally verified using MEMS capacitive pressure sensor. Compared to recently published work, the prototype achieves an excellent energy efficiency of 7.9 pJ/Step. © 2004-2012 IEEE.

7.9 pJ/Step Energy-Efficient Multi-Slope 13-bit Capacitance-to-Digital Converter

KAUST Repository

Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

2014-01-01

In this brief, an energy-efficient capacitance-to-digital converter (CDC) is presented. The proposed CDC uses digitally controlled coarse-fine multi-slope integration to digitize a wide range of capacitance in short conversion time. Both integration current and frequency are scaled, which leads to significant improvement in the energy efficiency of both analog and digital circuitry. Mathematical analysis for circuit nonidealities, noise, and improvement in energy efficiency is provided. A prototype fabricated in a 0.35-μm CMOS process occupies 0.09 mm2 and consumes a total of 153 μA from 3.3 V supply while achieving 13-bit resolution. The operation of the prototype is experimentally verified using MEMS capacitive pressure sensor. Compared to recently published work, the prototype achieves an excellent energy efficiency of 7.9 pJ/Step. © 2004-2012 IEEE.

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Science.gov (United States)

Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

2018-05-01

This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

Science.gov (United States)

Scardelletti, Maximilian C.; Zorman, Christian A.

2016-01-01

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Suppression of multipacting in high power RF couplers operating with superconducting cavities

Energy Technology Data Exchange (ETDEWEB)

Ostroumov, P.N., E-mail: ostroumov@frib.msu.edu [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States); Kazakov, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Morris, D.; Larter, T.; Plastun, A.S.; Popielarski, J.; Wei, J.; Xu, T. [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States)

2017-06-01

Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.

A flexible capacitive tactile sensing array with floating electrodes

International Nuclear Information System (INIS)

Cheng, M-Y; Huang, X-H; Ma, C-W; Yang, Y-J

2009-01-01

In this work, we present the development of a capacitive tactile sensing array realized by using MEMS fabrication techniques and flexible printed circuit board (FPCB) technologies. The sensing array, which consists of two micromachined polydimethlysiloxane (PDMS) structures and a FPCB, will be used as the artificial skin for robot applications. Each capacitive sensing element comprises two sensing electrodes and a common floating electrode. The sensing electrodes and the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrode is patterned on one of the PDMS structures. This special design can effectively reduce the complexity of the device structure and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions are measured and discussed. The corresponding scanning circuits are also designed and implemented. The tactile images induced by the PMMA stamps of different shapes are also successfully captured by a fabricated 8 × 8 array

Analog/RF performance of four different Tunneling FETs with the recessed channels

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng

2016-12-01

In this paper, the performance comparisons of analog and radio frequency (RF) in the four different tunneling field effect transistors (TFETs) with the recessed channels are performed. The L-shaped channel TFET (LTFET), U-shaped channel TFET (UTFET), U-shaped channel with L-shaped gate TFET (LGUTFET) and U-shaped channel with dual sources TFET (DUTFET) are investigated by using Silvaco-Atalas simulation tool. The transconductance (gm), output conductance (gds), gate capacitance (Cgg), cut-off frequency (fT) and gain bandwidth product (GBW) are the parameters by analyzed. Among all the considered devices, the DUTFET has the maximum gm and gds due to the improved on-state current by dual sources, and the LTFET has the minimum Cgg because of the minimum gate-to-drain capacitance (Cgd). Since analog/RF characteristics of a device are proportional to gm and inversely proportional to Cgg, the LTFET and DUTFET have better analog/RF performance compared to the UTFET and LGUTFET. The extracted largest fT is 3.02 GHz in the LTFET and the largest GBW is 1.02 GHz in the DUTFET. The simulation results in this paper can be used as a reference to choose the TFET among these four TFETs for analog/RF applications.

On Packaging of MEMS. Simulation of Transfer Moulding and Packaging Stress and their Effect on a Family of piezo-resistive Pressure Sensors

OpenAIRE

Krondorfer, Rudolf H.

2004-01-01

Micro Electro Mechanical Systems (MEMS) produced to date include IR detectors, accelerometers, pressure sensors, micro lenses, actuators, chemical sensors, gear drives, RF devices, optical processor chips, micro robots and devices for biomedical analysis. The track for tomorrow has already been set and products like 3D TV, physician on a chip, lab on a chip, micro aircraft and food safety sensors will be developed when the technology matures and the market is ready. Todays MEMS fabricatio...

A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

KAUST Repository

Omran, Hesham

2016-11-16

A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

KAUST Repository

Omran, Hesham; Alhoshany, Abdulaziz; Alahmadi, Hamzah; Salama, Khaled N.

2016-01-01

A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

Pulse mode actuation-readout system based on MEMS resonator for liquid sensing

DEFF Research Database (Denmark)

Tang, Meng; Cagliani, Alberto; Davis, Zachary James

2014-01-01

A MEMS (Micro-Electro-Mechanical Systems) bulk disk resonator is applied for mass sensing under its dynamic mode. The classical readout circuitry involves sophisticated feedback loop and feedthrough compensation. We propose a simple straightforward non-loop pulse mode actuation and capacitive...... readout scheme. In order to verify its feasibility in liquid bio-chemical sensing environment, an experimental measurement is conducted with humidity sensing application. The measured resonant frequency changes 60kHz of 67.7MHz with a humidity change of 0~80%....

MEMS packaging

CERN Document Server

Hsu , Tai-Ran

2004-01-01

MEMS Packaging discusses the prevalent practices and enabling techniques in assembly, packaging and testing of microelectromechanical systems (MEMS). The entire spectrum of assembly, packaging and testing of MEMS and microsystems, from essential enabling technologies to applications in key industries of life sciences, telecommunications and aerospace engineering is covered. Other topics included are bonding and sealing of microcomponents, process flow of MEMS and microsystems packaging, automated microassembly, and testing and design for testing.The Institution of Engineering and Technology is

Test results of the Los Alamos ferrite-tuned rf cavity

International Nuclear Information System (INIS)

Friedrichs, C.C.; Spalek, G.; Carlini, R.D.; Smythe, W.R.

1987-03-01

An rf accelerating cavity appropriate for use in a 20% frequency bandwidth synchrotron has been designed, fabricated, and is now being tested at Los Alamos. The cavity-amplifier system was designed to produce a peak rf gap voltage of 90 kV over the range from 50 to 60 MHz. Special features of the system are the transversely biased ferrite tuner, capacitive coupling of the amplifier to the cavity, and a 15-cm beam pipe. High-power rf testing of the cavity-amplifier system started in August 1986, using an adjustable dc power supply to bias the ferrite. This paper describes the cavity-amplifier circuit and the test results to the present time. Future plans are also discussed

Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

Science.gov (United States)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

Energy Technology Data Exchange (ETDEWEB)

Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E. [Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720-1770 (United States); Chabert, P. [Laboratoire de Physique des Plasmas, CNRS, Ecole Polytechnique, UPMC, Paris XI, Observatoire de Paris, 91128 Palaiseau (France)

2016-01-15

It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths and the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

Science.gov (United States)

Zhang, Ping

Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Science.gov (United States)

Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

2005-01-01

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Effect of antenna capacitance on the plasma characteristics of an internal linear inductively coupled plasma system

International Nuclear Information System (INIS)

Lim, Jong Hyeuk; Kim, Kyong Nam; Park, Jung Kyun; Yeom, Geun Young

2008-01-01

This study examined the effect of the antenna capacitance of an inductively coupled plasma (ICP) source, which was varied using an internal linear antenna, on the electrical and plasma characteristics of the ICP source. The inductive coupling at a given rf current increased with decreasing antenna capacitance. This was caused by a decrease in the inner copper diameter of the antenna made from coaxial copper/quartz tubing, which resulted in a higher plasma density and lower plasma potential. By decreasing the diameter of the copper tube from 25 to 10 mm, the plasma density of a plasma source size of 2750x2350 mm 2 was increased from approximately 8x10 10 /cm 3 to 1.5x10 11 /cm 3 at 15 mTorr Ar and 9 kW of rf power

Analytical–numerical global model of atmospheric-pressure radio-frequency capacitive discharges

International Nuclear Information System (INIS)

Lazzaroni, C; Chabert, P; Lieberman, M A; Lichtenberg, A J; Leblanc, A

2012-01-01

A one-dimensional hybrid analytical–numerical global model of atmospheric-pressure, radio-frequency (rf) driven capacitive discharges is developed. The feed gas is assumed to be helium with small admixtures of oxygen or nitrogen. The electrical characteristics are modeled analytically as a current-driven homogeneous discharge. The electron power balance is solved analytically to determine a time-varying Maxwellian electron temperature, which oscillates on the rf timescale. Averaging over the rf period yields effective rate coefficients for gas phase activated processes. The particle balance relations for all species are then integrated numerically to determine the equilibrium discharge parameters. The coupling of analytical solutions of the time-varying discharge and electron temperature dynamics, and numerical solutions of the discharge chemistry, allows for a fast solution of the discharge equilibrium. Variations of discharge parameters with discharge composition and rf power are determined. Comparisons are made to more accurate but numerically costly fluid models, with space and time variations, but with the range of parameters limited by computational time. (paper)

Reduction of initial stress stiffening by topology optimization

DEFF Research Database (Denmark)

Philippine, M. A.; Sigmund, Ole; Rebeiz, G. M.

2012-01-01

Topology optimization is a rigorous method of obtaining non-intuitive designs. We use it to obtain a capacitive RF switch that stiffens little in response to an increase of the in-plane biaxial stresses that typically develop during MEMS fabrication. The actuation voltage is closely related...... level. We include a volume constraint and a compliance constraint. Topology optimized designs are compared to an intuitively-designed RF switch. The switches contain similar features. The compliance constraint is varied such that the topology optimized switch performance approaches the intuitively......-designed one. Finally, the importance of the compliance constraint and of the robust formulation are discussed....

Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

International Nuclear Information System (INIS)

Wang Hongyu; Sun Peng; Zhao Shuangyun; Li Yang; Jiang Wei

2016-01-01

We analyzed perpendicularly configured dual-frequency (DF) capacitively coupled plasmas (CCP). In this configuration, two pairs of electrodes are arranged oppositely, and the discharging is perpendicularly driven by two radio frequency (RF) sources. Particle-in-cell/Monte Carlo (PIC/MC) simulation showed that the configuration had some advantages as this configuration eliminated some dual frequency coupling effects. Some variation and potential application of the discharging configuration is discussed briefly. (paper)

Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging

International Nuclear Information System (INIS)

Lee, Ju-Yong; Lee, Sung-Woo; Lee, Seung-Ki; Park, Jae-Hyoung

2013-01-01

We present a novel method for the fabrication of void-free copper-filled through-glass-vias (TGVs), and their application to the wafer-level radio frequency microelectromechanical systems (RF MEMS) packaging scheme. By using the glass reflow process with a patterned silicon mold, a vertical TGV with smooth sidewall and fine pitch could be achieved. Bottom-up void-free filling of the TGV is successfully demonstrated through the seedless copper electroplating process. In addition, the proposed process allows wafer-level packaging with glass cap encapsulation using the anodic bonding process, since the reflowed glass interposer is only formed in the device area surrounded with silicon substrate. A simple coplanar waveguide (CPW) line was employed as the packaged device to evaluate the electrical characteristics and thermo-mechanical reliability of the proposed packaging structure. The fabricated packaging structure showed a low insertion loss of 0.116 dB and a high return loss of 35.537 dB at 20 GHz, which were measured through the whole electrical path, including the CPW line, TGVs and contact pads. An insertion loss lower than 0.1 dB and a return loss higher than 30 dB could be achieved at frequencies of up to 15 GHz, and the resistance of the single copper via was measured to be 36 mΩ. Furthermore, the thermo-mechanical reliability of the proposed packaging structure was also verified through thermal shock and pressure cooker test. (paper)

Biomaterials for MEMS

CERN Document Server

Chiao, Mu

2011-01-01

This book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge

The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

International Nuclear Information System (INIS)

Marsi, N; Majlis, B Y; Hamzah, A A; Mohd, F

2013-01-01

This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27°C, 500°C, 700°C and 1000°C. The results show that both materials display linear characteristics for temperature up to 500°C, although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700°C and 1000°C, the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.

Miniaturization of components and systems for space using MEMS-technology

Science.gov (United States)

Grönland, Tor-Arne; Rangsten, Pelle; Nese, Martin; Lang, Martin

2007-06-01

Development of MEMS-based (micro electro mechanical system) components and subsystems for space applications has been pursued by various research groups and organizations around the world for at least two decades. The main driver for developing MEMS-based components for space is the miniaturization that can be achieved. Miniaturization can not only save orders of magnitude in mass and volume of individual components, but it can also allow increased redundancy, and enable novel spacecraft designs and mission scenarios. However, the commercial breakthrough of MEMS has not occurred within the space business as it has within other branches such as the IT/telecom or automotive industries, or as it has in biotech or life science applications. A main explanation to this is the highly conservative attitude to new technology within the space community. This conservatism is in many senses motivated by a very low risk acceptance in the few and costly space projects that actually ends with a space flight. To overcome this threshold there is a strong need for flight opportunities where reasonable risks can be accepted. Currently there are a few flight opportunities allowing extensive use of new technology in space, but one of the exceptions is the PRISMA program. PRISMA is an international (Sweden, Germany, France, Denmark, Norway, Greece) technology demonstration program with focus on rendezvous and formation flying. It is a two satellite LEO mission with a launch scheduled for the first half of 2009. On PRISMA, a number of novel technologies e.g. RF metrology sensor for Darwin, autonomous formation flying based on GPS and vision-based sensors, ADN-based "green propulsion" will be demonstrated in space for the first time. One of the satellites will also have a miniaturized propulsion system onboard based on MEMS-technology. This novel propulsion system includes two microthruster modules, each including four thrusters with micro- to milli-Newton thrust capability. The novelty

CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

KAUST Repository

Abdul Rahim, Farhan

2014-05-01

MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

Science.gov (United States)

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Design and Fabrication of a Reconfigurable MEMS-Based Antenna

KAUST Repository

Martinez, Miguel Angel Galicia

2011-06-22

This thesis presents the design and fabrication of a customized in house Micro-Electro-Mechanical-Systems (MEMS) process based on-chip antenna that is both frequency and polarization reconfigurable. It is designed to work at both 60 GHz and 77 GHz through MEMS switches. This antenna can also work in both horizontal and vertical linear polarizations by utilizing a moveable plate. The design is intended for Wireless Personal Area Networks (WPAN) and automotive radar applications. Typical on-chip antennas are inefficient and difficult to reconfigure. Therefore, the focus of this work is to develop an efficient on-chip antenna solution, which is reconfigurable in frequency and in polarization. A fractal bowtie antenna is employed for this thesis, which achieves frequency reconfigurability through MEMS switches. The design is simulated in industry standard Electromagnetic (EM) simulator Ansoft HFSS. A novel concept for horizontal to vertical linear polarization agility is introduced which incorporates a moveable polymer plate. For this work, a microprobe is used to move the plate from the horizontal to vertical position. For testing purposes, a novel mechanism has been designed in order to feed the antenna with RF-probes in both horizontal and vertical positions. A simulated gain of approximately 0 dB is achieved at both target frequencies (60 and 77 GHz), in both horizontal and vertical positions. In all the cases mentioned above (both frequencies and positions), the antenna is well matched (< -10 dB) to the 50 Ω system impedance. Similarly, the radiation nulls are successfully shifted by changing the position of the antenna from horizontal to vertical. The complete design and fabrication of the reconfigurable MEMS antenna has been done at KAUST facilities. Some challenges have been encountered during its realization due to the immaturity of the customized MEMS fabrication process. Nonetheless, a first fabrication attempt has highlighted such shortcomings. According

Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

Directory of Open Access Journals (Sweden)

Abhijeet KSHIRSAGAR

2010-04-01

Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

DEFF Research Database (Denmark)

Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

2014-01-01

This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

LIF-measurements on a low prassure RF-driven InBr lamp

NARCIS (Netherlands)

Mulders, H.C.J.; Stoffels, W.W.

2007-01-01

A laser induced fluorescence (LIF) experiment has been carried out on a low pressure, capacitively coupled RF driven. Ar discharge with InBr as an additive. The intention is to find the density of the different states of InBr and the metastable states in particular. We measured the density profile

A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

Science.gov (United States)

Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

2017-11-01

An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed.

A novel multi-level IC-compatible surface microfabrication technology for MEMS with independently controlled lateral and vertical submicron transduction gaps

International Nuclear Information System (INIS)

Cicek, Paul-Vahe; Elsayed, Mohannad; Nabki, Frederic; El-Gamal, Mourad

2017-01-01

An above-IC compatible multi-level MEMS surface microfabrication technology based on a silicon carbide structural layer is presented. The fabrication process flow provides optimal electrostatic transduction by allowing the creation of independently controlled submicron vertical and lateral gaps without the need for high resolution lithography. Adopting silicon carbide as the structural material, the technology ensures material, chemical and thermal compatibility with modern semiconductor nodes, reporting the lowest peak processing temperature (i.e. 200 °C) of all comparable works. This makes this process ideally suited for integrating capacitive-based MEMS directly above standard CMOS substrates. Process flow design and optimization are presented in the context of bulk-mode disk resonators, devices that are shown to exhibit improved performance with respect to previous generation flexural beam resonators, and that represent relatively complex MEMS structures. The impact of impending improvements to the fabrication technology is discussed. (paper)

A Widely-Accessible Distributed MEMS Processing Environment. The MEMS Exchange Program

Science.gov (United States)

2012-10-29

all of these patterns in advance, we made a new cost model, called the Python Code cost model, which utilizes the power of a high level programming ...document entitled “The Beginners Guide to MEMS Processing” on the MEMSNet and MEMS Exchange The MEMS Exchange Program Final Technical Report October 29...from the Government is absolutely necessary. As said The MEMS Exchange Program Final Technical Report October 29, 2012 Page 57 of 58 before

Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

Science.gov (United States)

Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

2001-01-01

In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

Effects of electron inertia in capacitively coupled radio frequency discharges

International Nuclear Information System (INIS)

Xiang Nong

2004-01-01

The effects of the electron inertia on the plasma and sheath dynamics in capacitively coupled rf discharges with frequency ωω pi are investigated (here, ω and ω pi are the rf frequency and bulk ion plasma frequency, respectively). It is found that the effects of the electron inertia on the plasma density and ion velocity in the quasi-neutral region depend on the ratio of the amplitudes of the discharge current I rf and ion current I B =en 0 C s (here, e is the unit charge, n 0 is the plasma density at center, and C s is the ion sound speed). If the ratio is small so that I rf /I B √(m i /m e ) (here, m i and m e are ion and electron masses, respectively), the ion and time-averaged electron densities, ion velocity, and electric fields are little affected by the electron inertia. Otherwise, the effects of the electron inertia are significant. It is also shown that the assumption that the electrons obey the Boltzmann distribution in the sheath is invalid when the electron flux flowing to the electrode is significant

Control of Bouncing in MEMS Switches Using Double Electrodes

KAUST Repository

Abdul Rahim, Farhan

2016-08-09

This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both lumped parameter and beam models. The simulations of bouncing and its control are discussed. Comparison between the new proposed method and other available control techniques is also made. The Galerkin method is applied on the beam model accounting for the nonlinear electrostatic force, squeeze film damping, and surface contact effect. The results indicate that it is possible to reduce bouncing and hence beam degradation, by the use of double electrodes.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

Science.gov (United States)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

Science.gov (United States)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

Directory of Open Access Journals (Sweden)

Yu-Chun Liu

2015-08-01

Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

Scaled RF cavity for the Vinca cyclotron; Modelni poskusi visokofrekvencnega dela za ciklotron u Vinci

Energy Technology Data Exchange (ETDEWEB)

Paulin, A [VTS, Univerza Maribor, Maribor (Yugoslavia); Bezic, N; Anicin, I [Institute of nuclear sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1983-07-01

RF resonator reduced five times is described. The model was constructed according to former considerations. The measurements have shown that the predictions had been correct with respect to the capacitively terminated as well as the helix coaxial guide. (author)

A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams.

Science.gov (United States)

Gao, Lili; Zhou, Zai-Fa; Huang, Qing-An

2017-11-08

A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams

Directory of Open Access Journals (Sweden)

Lili Gao

2017-11-01

Full Text Available A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC, is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

Transition of RF internal antenna plasma by gas control

Energy Technology Data Exchange (ETDEWEB)

Hamajima, Takafumi; Yamauchi, Toshihiko; Kobayashi, Seiji; Hiruta, Toshihito; Kanno, Yoshinori [Advanced Institute of Industrial Technology, 1-10-40 HigashiOhi, Shinagawa-ku, Tokyo, 140-0011 (Japan); Japan Atomic Energy Agency, 2-4 Tokai-mura, Naka-gun, Ibaraki-ken, 319-1195 (Japan)

2012-07-11

The transition between the capacitively coupled plasma (CCP) and the inductively coupled plasma (ICP) was investigated with the internal radio frequency (RF) multi-turn antenna. The transition between them showed the hysteresis curve. The radiation power and the period of the self-pulse mode became small in proportion to the gas pressure. It was found that the ICP transition occurred by decreasing the gas pressure from 400 Pa.

Modeling and Analysis of a Closed-Loop System for High-Q MEMS Accelerometer Sensor

Directory of Open Access Journals (Sweden)

Wang Yalin

2018-01-01

Full Text Available High-Q sensing element is desirable for high performance while makes the loop control a great challenge. This paper presents a closed-loop system for high-Q capacitive MEMS accelerometer which has achieved loop control effectively. The proportional-derivative(PDcontrol is developed in the system to improve the system stability. In addition, pulse width modulation (PWM electrostatic force feedback is designed in the loop to overcome the nonlinearity. Furthermore, a sigma-delta (ΣΔ modulator with noise shaping is built to realize digital output. System model is built in Matlab/Simulink. The simulation results indicate that equivalent Q value is reduced to 1.5 to ensure stability and responsiveness of the system. The effective number of bits of system output is 14.7 bits. The system nonlinearity is less than 5‰. The equivalent linear model including main noise factors is built, and then a complete theory of noise and linearity analysis is established to contribute to common MEMS accelerometer research.

EDITORIAL: International MEMS Conference 2006

Science.gov (United States)

Tay, Francis E. H.; Jianmin, Miao; Iliescu, Ciprian

2006-04-01

The International MEMS conference (iMEMS2006) organized by the Institute of Bioengineering and Nanotechnology and Nanyang Technological University aims to provide a platform for academicians, professionals and industrialists in various related fields from all over the world to share and learn from each other. Of great interest is the incorporation of the theme of life sciences application using MEMS. It is the desire of this conference to initiate collaboration and form network of cooperation. This has continued to be the objective of iMEMS since its inception in 1997. The technological advance of MEMS over the past few decades has been truly exciting in terms of development and applications. In order to participate in this rapid development, a conference involving delegates from within the MEMS community and outside the community is very meaningful and timely. With the receipt of over 200 articles, delegates related to MEMS field from all over the world will share their perspectives on topics such as MEMS/MST Design, MEMS Teaching and Education, MEMS/MST Packaging, MEMS/MST Fabrication, Microsystems Applications, System Integration, Wearable Devices, MEMSWear and BioMEMS. Invited speakers and delegates from outside the field have also been involved to provide challenges, especially in the life sciences field, for the MEMS community to potentially address. The proceedings of the conference will be published as an issue in the online Journal of Physics: Conference Series and this can reach a wider audience and will facilitate the reference and citation of the work presented in the conference. We wish to express our deep gratitude to the International Scientific Committee members and the organizing committee members for contributing to the success of this conference. We would like to thank all the delegates, speakers and sponsors from all over the world for presenting and sharing their perspectives on topics related to MEMS and the challenges that MEMS can

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

Science.gov (United States)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

RF tuning system for superconducting cyclotron at VECC

International Nuclear Information System (INIS)

Mandal, Aditya; Som, S.; Pal, Saikat; Seth, S.; Mukherjee, A.K.; Gangopadhyay, P.; Prasad, J.S.; Raj, P.R.; Manna, S.K.; Banerjee, M.; Krishnaiah, K.V.; Maskawade, S.; Saha, M.S.; Biswas, S.; Panda, Umashakar

2009-01-01

The RF system of Superconducting cyclotron at VECC has operational frequency 9-27 MHz. It has three numbers of tunable rf amplifier cavities as well as six numbers of tunable Main resonant cavities. RF tuning system takes care of movement of nine stepper motor based sliding short movement and hydraulic driven three coupling capacitors and three trimmer capacitors. The PC-based stepper motor controlled sliding short movement system has positional accuracy of around 20 micron and PC-based hydraulically driven couplers and trimmers system has 10 micron positional accuracy. The RF power is capacitively coupled to the dee (accelerating electrode) of the main resonant cavity through Coupler (Coupling capacitor). The coupling capacitor is used to match the impedance of the main resonant cavity to the 50 Ohm output impedance of final RF power amplifier. Trimmer capacitor operates in closed loop for the adjustment of cavity phase variation arising due to temperature variation and beam loading of the cavity. Coupler can travel 100 mm. and trimmer has 20 mm. travels. A PLC based PID control system has been developed for positional control of the coupler and trimmer. One position control mode of trimmer is same as coupling capacitor and another is velocity control mode. Velocity control mode operates in close-loop. The positional data of different frequencies of nine stepper motors and three coupling capacitors are stored in a database. (author)

Advanced Mechatronics and MEMS Devices

CERN Document Server

2013-01-01

Advanced Mechatronics and MEMS Devicesdescribes state-of-the-art MEMS devices and introduces the latest technology in electrical and mechanical microsystems. The evolution of design in microfabrication, as well as emerging issues in nanomaterials, micromachining, micromanufacturing and microassembly are all discussed at length in this volume. Advanced Mechatronics also provides a reader with knowledge of MEMS sensors array, MEMS multidimensional accelerometer, artificial skin with imbedded tactile components, as well as other topics in MEMS sensors and transducers. The book also presents a number of topics in advanced robotics and an abundance of applications of MEMS in robotics, like reconfigurable modular snake robots, magnetic MEMS robots for drug delivery and flying robots with adjustable wings, to name a few. This book also: Covers the fundamentals of advanced mechatronics and MEMS devices while also presenting new state-of-the-art methodology and technology used in the application of these devices Prese...

Fundamental investigations of capacitive radio frequency plasmas: simulations and experiments

International Nuclear Information System (INIS)

Donkó, Z; Derzsi, A; Hartmann, P; Korolov, I; Schulze, J; Czarnetzki, U; Schüngel, E

2012-01-01

Capacitive radio frequency (RF) discharge plasmas have been serving hi-tech industry (e.g. chip and solar cell manufacturing, realization of biocompatible surfaces) for several years. Nonetheless, their complex modes of operation are not fully understood and represent topics of high interest. The understanding of these phenomena is aided by modern diagnostic techniques and computer simulations. From the industrial point of view the control of ion properties is of particular interest; possibilities of independent control of the ion flux and the ion energy have been utilized via excitation of the discharges with multiple frequencies. ‘Classical’ dual-frequency (DF) discharges (where two significantly different driving frequencies are used), as well as discharges driven by a base frequency and its higher harmonic(s) have been analyzed thoroughly. It has been recognized that the second solution results in an electrically induced asymmetry (electrical asymmetry effect), which provides the basis for the control of the mean ion energy. This paper reviews recent advances on studies of the different electron heating mechanisms, on the possibilities of the separate control of ion energy and ion flux in DF discharges, on the effects of secondary electrons, as well as on the non-linear behavior (self-generated resonant current oscillations) of capacitive RF plasmas. The work is based on a synergistic approach of theoretical modeling, experiments and kinetic simulations based on the particle-in-cell approach. (paper)

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

MEMS variable capacitance devices utilizing the substrate: II. Zipping varactors

KAUST Repository

Elshurafa, Amro M.

2010-03-22

This paper, the second and last in this series, introduces PolyMUMPS zipping varactors that exploit the substrate and provide a high tuning range and a high quality factor. Building on the important findings of part I of this paper, the substrate was utilized effectively once again in the design and fabrication of zipping varactors to attain devices with very good performance. Two zipping varactors are proposed, analysed theoretically, simulated, fabricated and tested successfully. The tuning range, quality factor and actuation voltage of those varactors are 4.5, 16.4, 55 V and 4.2, 17, 55 V respectively. Finally, and based on one of the proposed zipping varactors, a very large capacitance value varactor array, with a tuning range of 5.3, was designed and tested. To the best of our knowledge, these zipping varactors exhibit the best reported characteristics in PolyMUMPS to date within their category in terms of tuning range, quality factor, required actuation voltage and total area consumed. © 2010 IOP Publishing Ltd.

Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

International Nuclear Information System (INIS)

Fu, Y Q; Milne, S B; Luo, J K; Flewitt, A J; Wang, L; Miao, J M; Milne, W I

2006-01-01

A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, H f O 2 , was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms

Design of traveling wave windows for the PEP-II RF coupling network

International Nuclear Information System (INIS)

Kroll, N.M.; Ng, C.K.; Judkins, J.; Neubauer, M.

1995-05-01

The waveguide windows in the PEP-II RF coupling network have to withstand high power of 500 kW. Traveling wave windows have lower power dissipation than conventional self-matched windows, thus rendering the possibility of less stringent mechanical design. The traveling wave behavior is achieved by providing a reflecting iris on each side of the window, and depending on the configuration of the irises, traveling wave windows are characterized as inductive or capacitive types. A numerical design procedure using MAFIA has been developed for traveling wave windows. The relative advantages of inductive and capacitive windows are discussed. Furthermore, the issues of bandwidth and multipactoring are also addressed

A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

International Nuclear Information System (INIS)

Dong Linxi; Chen Jindan; Huo Weihong; Li Yongjie; Sun Lingling; Yan Haixia

2009-01-01

The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30: 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.

Converting MEMS technology into profits

Science.gov (United States)

Bryzek, Janusz

1998-08-01

This paper discusses issues related to transitioning a company from the advanced technology development phase (with a particular focus on MEMS) to a profitable business, with emphasis on start-up companies. It includes several case studies from (primarily) NovaSensor MEMS development history. These case studies illustrate strategic problems with which advanced MEMS technology developers have to be concerned. Conclusions from these case studies could be used as checkpoints for future MEMS developers to increase probability of profitable operations. The objective for this paper is to share the author's experience from multiple MEMS start-ups to accelerate development of the MEMS market by focusing state- of-the-art technologists on marketing issues.

Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

International Nuclear Information System (INIS)

Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

2012-01-01

We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

Polyimide and Metals MEMS Multi-User Processes

KAUST Repository

Arevalo, Arpys

2016-11-01

The development of a polyimide and metals multi-user surface micro-machining process for Micro-electro-mechanical Systems (MEMS) is presented. The process was designed to be as general as possible, and designed to be capable to fabricate different designs on a single silicon wafer. The process was not optimized with the purpose of fabricating any one specific device but can be tweaked to satisfy individual needs depending on the application. The fabrication process uses Polyimide as the structural material and three separated metallization layers that can be interconnected depending on the desired application. The technology allows the development of out-of-plane compliant mechanisms, which can be combined with six variations of different physical principles for actuation and sensing on a single processed silicon wafer. These variations are: electrostatic motion, thermal bimorph actuation, capacitive sensing, magnetic sensing, thermocouple-based sensing and radio frequency transmission and reception.

Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

Directory of Open Access Journals (Sweden)

Aiping Zeng

2017-01-01

Full Text Available The plasma treatment on commercial active carbon (AC was carried out in a capacitively coupled plasma system using Ar + 10% O2 at pressure of 4.0 Torr. The RF plasma power ranged from 50 W to 100 W and the processing time was 10 min. The carbon film electrode was fabricated by electrophoretic deposition. Micro-Raman spectroscopy revealed the highly increased disorder of sp2 C lattice for the AC treated at 75 W. An electrosorption capacity of 6.15 mg/g was recorded for the carbon treated at 75 W in a 0.1 mM NaCl solution when 1.5 V was applied for 5 hours, while the capacity of the untreated AC was 1.01 mg/g. The plasma treatment led to 5.09 times increase in the absorption capacity. The jump of electrosorption capacity by plasma treatment was consistent with the Raman spectra and electrochemical double layer capacitance. This work demonstrated that plasma treatment was a potentially efficient approach to activating biochar to serve as electrode material for capacitive deionization (CDI.

Simple fall criteria for MEMS sensors: Data analysis and sensor concept

KAUST Repository

Ibrahim, Alwathiqbellah; Younis, Mohammad I.

2014-01-01

This paper presents a new and simple fall detection concept based on detailed experimental data of human falling and the activities of daily living (ADLs). Establishing appropriate fall algorithms compatible with MEMS sensors requires detailed data on falls and ADLs that indicate clearly the variations of the kinematics at the possible sensor node location on the human body, such as hip, head, and chest. Currently, there is a lack of data on the exact direction and magnitude of each acceleration component associated with these node locations. This is crucial for MEMS structures, which have inertia elements very close to the substrate and are capacitively biased, and hence, are very sensitive to the direction of motion whether it is toward or away from the substrate. This work presents detailed data of the acceleration components on various locations on the human body during various kinds of falls and ADLs. A two-degree-of-freedom model is used to help interpret the experimental data. An algorithm for fall detection based on MEMS switches is then established. A new sensing concept based on the algorithm is proposed. The concept is based on employing several inertia sensors, which are triggered simultaneously, as electrical switches connected in series, upon receiving a true fall signal. In the case of everyday life activities, some or no switches will be triggered resulting in an open circuit configuration, thereby preventing false positive. Lumped-parameter model is presented for the device and preliminary simulation results are presented illustrating the new device concept. © 2014 by the authors; licensee MDPI, Basel, Switzerland.

Simple fall criteria for MEMS sensors: Data analysis and sensor concept

KAUST Repository

Ibrahim, Alwathiqbellah

2014-07-08

This paper presents a new and simple fall detection concept based on detailed experimental data of human falling and the activities of daily living (ADLs). Establishing appropriate fall algorithms compatible with MEMS sensors requires detailed data on falls and ADLs that indicate clearly the variations of the kinematics at the possible sensor node location on the human body, such as hip, head, and chest. Currently, there is a lack of data on the exact direction and magnitude of each acceleration component associated with these node locations. This is crucial for MEMS structures, which have inertia elements very close to the substrate and are capacitively biased, and hence, are very sensitive to the direction of motion whether it is toward or away from the substrate. This work presents detailed data of the acceleration components on various locations on the human body during various kinds of falls and ADLs. A two-degree-of-freedom model is used to help interpret the experimental data. An algorithm for fall detection based on MEMS switches is then established. A new sensing concept based on the algorithm is proposed. The concept is based on employing several inertia sensors, which are triggered simultaneously, as electrical switches connected in series, upon receiving a true fall signal. In the case of everyday life activities, some or no switches will be triggered resulting in an open circuit configuration, thereby preventing false positive. Lumped-parameter model is presented for the device and preliminary simulation results are presented illustrating the new device concept. © 2014 by the authors; licensee MDPI, Basel, Switzerland.

Capacitive micromachined ultrasonic transducers for medical imaging and therapy.

Science.gov (United States)

Khuri-Yakub, Butrus T; Oralkan, Omer

2011-05-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications.

Piezoelectric MEMS sensors: state-of-the-art and perspectives

International Nuclear Information System (INIS)

Tadigadapa, S; Mateti, K

2009-01-01

Over the past two decades, several advances have been made in micromachined sensors and actuators. As the field of microelectromechanical systems (MEMS) has advanced, a clear need for the integration of materials other than silicon and its compounds into micromachined transducers has emerged. Piezoelectric materials are high energy density materials that scale very favorably upon miniaturization and that has led to an ever-growing interest in piezoelectric films for MEMS applications. At this time, piezoelectric aluminum-nitride-based film bulk acoustic resonators (FBAR) have already been successfully commercialized. Future innovations and improvements in inertial sensors for navigation, high-frequency crystal oscillators and filters for wireless applications, microactuators for RF applications, chip-scale chemical analysis systems and countless other applications hinge upon the successful miniaturization of components and integration of piezoelectrics and metals into these systems. In this article, a comprehensive review of micromachined piezoelectric transducer technology will be presented. Piezoelectric materials in bulk and thin film forms will be reviewed and fabrication techniques for the integration of these materials for microsensor applications will be presented. Recent advances in various piezoelectric microsensors will be presented through specific examples. This review will conclude with a critical assessment of the future trends and promise of this technology. (topical review)

High precision capacitive beam phase probe for KHIMA project

Energy Technology Data Exchange (ETDEWEB)

Hwang, Ji-Gwang, E-mail: windy206@hanmail.net [Korea Institute of Radiological and Medical Sciences, 215–4, Gongneung-dong, Nowon-t, Seoul 139–706 (Korea, Republic of); Yang, Tae-Keun [Korea Institute of Radiological and Medical Sciences, 215–4, Gongneung-dong, Nowon-t, Seoul 139–706 (Korea, Republic of); Forck, Peter [GSI Helmholtz Centre for Ion Research, Darmstadt 64291, German (Germany)

2016-11-21

In the medium energy beam transport (MEBT) line of KHIMA project, a high precision beam phase probe monitor is required for a precise tuning of RF phase and amplitude of Radio Frequency Quadrupole (RFQ) accelerator and IH-DTL linac. It is also used for measuring a kinetic energy of ion beam by time-of-flight (TOF) method using two phase probes. The capacitive beam phase probe has been developed. The electromagnetic design of the high precision phase probe was performed to satisfy the phase resolution of 1° (@200 MHz). It was confirmed by the test result using a wire test bench. The measured phase accuracy of the fabricated phase probe is 1.19 ps. The pre-amplifier electronics with the 0.125 ∼ 1.61 GHz broad-band was designed and fabricated for amplifying the signal strength. The results of RF frequency and beam energy measurement using a proton beam from the cyclotron in KIRAMS is presented.

FinFET and UTBB for RF SOI communication systems

Science.gov (United States)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

Study of effect of grain size on dust charging in an RF plasma using three-dimensional PIC-MCC simulations

International Nuclear Information System (INIS)

Ikkurthi, V. R.; Melzer, A.; Matyash, K.; Schneider, R.

2008-01-01

A 3-dimensional Particle-Particle Particle-Mesh (P 3 M) code is applied to study the charging process of micrometer size dust grains confined in a capacitive RF discharge. In our model, particles (electrons and ions) are treated kinetically (Particle-in-Cell with Monte Carlo Collisions (PIC-MCC)). In order to accurately resolve the plasma particles' motion close to the dust grain, the PIC technique is supplemented with Molecular Dynamics (MD), employing an an analytic electrostatic potential for the interaction with the dust grain. This allows to self-consistently resolve the dust grain charging due to absorption of plasma electrons and ions. The charging of dust grains confined above lower electrode in a capacitive RF discharge and its dependence on the size and position of the dust is investigated. The results have been compared with laboratory measurements

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

Science.gov (United States)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Miniaturized UHF, S-, and Ka-band RF MEMS Filters for Small Form Factor, High Performance EVA Radio, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In Phase II of this SBIR, Harmonic Devices (HDI) proposes to develop miniaturized MEMS filters at UHF, S-band and Ka-band to address the requirements of NASA's...

Positioning of the rf potential minimum line of a linear Paul trap with micrometer precision

DEFF Research Database (Denmark)

Herskind, Peter Fønss; Dantan, Aurélien; Albert, Magnus

2009-01-01

We demonstrate a general technique to achieve a precise radial displacement of the nodal line of the radiofrequency (rf) field in a linear Paul trap. The technique relies on the selective adjustment of the load capacitance of the trap electrodes, achieved through the addition of capacitors...... to the basic resonant rf circuit used to drive the trap. Displacements of up to ~100 µm with micrometer precision are measured using a combination of fluorescence images of ion Coulomb crystals and coherent coupling of such crystals to a mode of an optical cavity. The displacements are made without measurable...

Implementation of a monolithic capacitive accelerometer in a wafer-level 0.18 µm CMOS MEMS process

International Nuclear Information System (INIS)

Tseng, Sheng-Hsiang; Lu, Michael S-C; Wu, Po-Chang; Teng, Yu-Chen; Tsai, Hann-Huei; Juang, Ying-Zong

2012-01-01

This paper describes the design, fabrication and characterization of a complementary metal-oxide-semiconductor (CMOS) micro-electro-mechanical-system (MEMS) accelerometer implemented in a 0.18 µm multi-project wafer (MPW) CMOS MEMS process. In addition to the standard CMOS process, an additional aluminum layer and a thick photoresist masking layer are employed to achieve etching and microstructural release. The structural thickness of the accelerometer is up to 9 µm and the minimum structural spacing is 2.3 µm. The out-of-plane deflection resulted from the vertical stress gradient over the whole device is controlled to be under 0.2 µm. The chip area containing the micromechanical structure and switched-capacitor sensing circuit is 1.18 × 0.9 mm 2 , and the total power consumption is only 0.7 mW. Within the sensing range of ±6 G, the measured nonlinearity is 1.07% and the cross-axis sensitivities with respect to the in-plane and out-of-plane are 0.5% and 5.8%, respectively. The average sensitivity of five tested accelerometers is 191.4 mV G −1 with a standard deviation of 2.5 mV G −1 . The measured output noise floor is 354 µG Hz −1/2 , corresponding to a 100 Hz 1 G sinusoidal acceleration. The measured output offset voltage is about 100 mV at 27 °C, and the zero-G temperature coefficient of the accelerometer output is 0.94 mV °C −1 below 85 °C. (paper)

MEMS Reliability Assurance Activities at JPL

Science.gov (United States)

Kayali, S.; Lawton, R.; Stark, B.

2000-01-01

An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.

Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

Science.gov (United States)

Dey, Sukomal; Koul, Shiban K.; Poddar, Ajay K.; Rohde, Ulrich L.

2017-10-01

This work presents a micro-electro-mechanical system (MEMS) based on a wide-band 4-bit phase shifter using two back-to-back single-pole-four-throw (SP4T) switches and four different distributed MEMS transmission line (DMTL) structures that are implemented on 635 µm alumina substrate using surface micromachining process. An SP4T switch is designed with a series-shunt configuration and it demonstrates an average return loss of  >17 dB, an insertion loss of  28 dB up to 60 GHz. A maximum area of the SP4T switch is ~0.76 mm2. Single-pole-single-throw and SP4T switches are capable of handling 1 W of radio frequency (RF) power up to  >100 million cycles at 25° C; they can even sustained up to  >70 million cycles with 1 W at 85 °C. The proposed wide-band phase shifter works at 17 GHz (Ku-band), 25 GHz (K-band), 35 GHz (Ka-band) and 60 GHz (V-band) frequencies. Finally,a 4-bit phase shifter demonstrates an average insertion loss of  10 dB and maximum phase error of ~3.8° at 60 GHz frequency over 500 MHz bandwidth. Total area of the fabricated device is ~11 mm2. In addition, the proposed device works well up to  >107 cycles with 1 W of RF power. To the best of the author’s knowledge, this is the best reported wide-band MEMS 4-bit phase shifter in the literature that works with a constant resolution.

Challenges in the Packaging of MEMS

Energy Technology Data Exchange (ETDEWEB)

Malshe, A.P.; Singh, S.B.; Eaton, W.P.; O' Neal, C.; Brown, W.D.; Miller, W.M.

1999-03-26

The packaging of Micro-Electro-Mechanical Systems (MEMS) is a field of great importance to anyone using or manufacturing sensors, consumer products, or military applications. Currently much work has been done in the design and fabrication of MEMS devices but insufficient research and few publications have been completed on the packaging of these devices. This is despite the fact that packaging is a very large percentage of the total cost of MEMS devices. The main difference between IC packaging and MEMS packaging is that MEMS packaging is almost always application specific and greatly affected by its environment and packaging techniques such as die handling, die attach processes, and lid sealing. Many of these aspects are directly related to the materials used in the packaging processes. MEMS devices that are functional in wafer form can be rendered inoperable after packaging. MEMS dies must be handled only from the chip sides so features on the top surface are not damaged. This eliminates most current die pick-and-place fixtures. Die attach materials are key to MEMS packaging. Using hard die attach solders can create high stresses in the MEMS devices, which can affect their operation greatly. Low-stress epoxies can be high-outgassing, which can also affect device performance. Also, a low modulus die attach can allow the die to move during ultrasonic wirebonding resulting to low wirebond strength. Another source of residual stress is the lid sealing process. Most MEMS based sensors and devices require a hermetically sealed package. This can be done by parallel seam welding the package lid, but at the cost of further induced stress on the die. Another issue of MEMS packaging is the media compatibility of the packaged device. MEMS unlike ICS often interface with their environment, which could be high pressure or corrosive. The main conclusion we can draw about MEMS packaging is that the package affects the performance and reliability of the MEMS devices. There is a

About the EDF formation in a capacitively coupled argon plasma

International Nuclear Information System (INIS)

Tatanova, M; Thieme, G; Basner, R; Hannemann, M; Golubovskii, Yu B; Kersten, H

2006-01-01

The formation of the electron distribution function (EDF) in the bulk plasma of a capacitively coupled radio-frequency (rf) discharge in argon generated in the plasma-chemical reactor PULVA-INP is investigated experimentally and theoretically. Measurements of the EDF and internal plasma parameters were performed by means of a Langmuir probe at pressures of 0.5-100 Pa and discharge powers of 5-100 W. The observed EDFs have revealed a two-temperature behaviour at low pressures and evolved into a Maxwellian distribution at high gas pressures and large discharge powers. Theoretical determination of the EDF is based on the numerical solution of the Boltzmann kinetic equation in the local and non-local approaches under experimental conditions. The model includes elastic and inelastic electron-atom collisions and electron-electron interactions. Low electron temperatures and relatively high ionization degrees are the features of the PULVA-INP rf discharge. This leads to significant influence of the electron-electron collisions on the EDF formation. The modelled and measured distributions show good agreement in a wide range of discharge parameters, except for a range of low gas pressures, where the stochastic electron heating is intense. Additionally, mechanisms of the EDF formation in the dc and rf discharge were compared under similar discharge conditions

About the EDF formation in a capacitively coupled argon plasma

Energy Technology Data Exchange (ETDEWEB)

Tatanova, M [Institute of Physics, Saint-Petersburg State University, ul. Ulianovskaja 1, 198504 Saint-Petersburg (Russian Federation); Thieme, G [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Basner, R [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Hannemann, M [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany); Golubovskii, Yu B [Institute of Physics, Saint-Petersburg State University, ul. Ulianovskaja 1, 198504 Saint-Petersburg (Russian Federation); Kersten, H [Institut fur Niedertemperatur-Plasmaphysik, Friedrich-Ludwig-Jahn-Str 19, D-17489 Greifswald (Germany)

2006-08-01

The formation of the electron distribution function (EDF) in the bulk plasma of a capacitively coupled radio-frequency (rf) discharge in argon generated in the plasma-chemical reactor PULVA-INP is investigated experimentally and theoretically. Measurements of the EDF and internal plasma parameters were performed by means of a Langmuir probe at pressures of 0.5-100 Pa and discharge powers of 5-100 W. The observed EDFs have revealed a two-temperature behaviour at low pressures and evolved into a Maxwellian distribution at high gas pressures and large discharge powers. Theoretical determination of the EDF is based on the numerical solution of the Boltzmann kinetic equation in the local and non-local approaches under experimental conditions. The model includes elastic and inelastic electron-atom collisions and electron-electron interactions. Low electron temperatures and relatively high ionization degrees are the features of the PULVA-INP rf discharge. This leads to significant influence of the electron-electron collisions on the EDF formation. The modelled and measured distributions show good agreement in a wide range of discharge parameters, except for a range of low gas pressures, where the stochastic electron heating is intense. Additionally, mechanisms of the EDF formation in the dc and rf discharge were compared under similar discharge conditions.

Optical inspection of hidden MEMS structures

Science.gov (United States)

Krauter, Johann; Gronle, Marc; Osten, Wolfgang

2017-06-01

Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

A single-ended CMOS sensing circuit for MEMS gyroscope with noise cancellation

KAUST Repository

Elsayed, Mohannad Yomn

2010-06-01

In this work, a complete single-ended readout circuit for capacitive MEMS gyroscope using chopper stabilization technique is presented. A novel noise cancellation technique is used to get rid of the bias noise. The circuit offers superior performance over state of the art readout circuits in terms of cost, gain, and noise for the given area and power consumption. The full circuit exhibits a gain of 58dB, a power dissipation of 1.3mW and an input referred noise of 12nV/√Hz. This would significantly improve the overall sensitivity of the gyroscope. The full circuit has been fabricated in 0.6um CMOS technology and it occupies an area of 0.4mm × 1mm. © 2010 IEEE.

A single-ended CMOS sensing circuit for MEMS gyroscope with noise cancellation

KAUST Repository

Elsayed, Mohannad Yomn; Emira, Ahmed; Sedky, Sherif M.; Habib, S. E. D.

2010-01-01

In this work, a complete single-ended readout circuit for capacitive MEMS gyroscope using chopper stabilization technique is presented. A novel noise cancellation technique is used to get rid of the bias noise. The circuit offers superior performance over state of the art readout circuits in terms of cost, gain, and noise for the given area and power consumption. The full circuit exhibits a gain of 58dB, a power dissipation of 1.3mW and an input referred noise of 12nV/√Hz. This would significantly improve the overall sensitivity of the gyroscope. The full circuit has been fabricated in 0.6um CMOS technology and it occupies an area of 0.4mm × 1mm. © 2010 IEEE.

Calibration of tri-axial MEMS accelerometers in the low-frequency range – Part 2: Uncertainty assessment

Directory of Open Access Journals (Sweden)

G. D'Emilia

2018-05-01

Full Text Available A comparison among three methods for the calibration of tri-axial accelerometers, in particular MEMS, is presented in this paper, paying attention to the uncertainty assessment of each method. The first method is performed according to the ISO 16063 standards. Two innovative methods are analysed, both suitable for in-field application. The effects on the whole uncertainty of the following aspects have been evaluated: the test bench performances in realizing the reference motion, the vibration reference sensor, the geometrical parameters and the data processing techniques. The uncertainty contributions due to the offset and the transverse sensitivity are also studied, by calibrating two different types of accelerometers, a piezoelectric one and a capacitive one, to check their effect on the accuracy of the methods under comparison. The reproducibility of methods is demonstrated. Relative uncertainty of methods ranges from 3 to 5 %, depending on the complexity of the model and of the requested operations. The results appear promising for low-cost calibration of new tri-axial accelerometers of MEMS type.

Theoretical and experimental study of the bending influence on the capacitance of interdigitated micro-electrodes patterned on flexible substrates

International Nuclear Information System (INIS)

Molina-Lopez, F.; Briand, D.; Rooij, N. F. de; Kinkeldei, T.; Tröster, G.

2013-01-01

Interdigitated electrodes are common structures in the fields of microelectronics and MEMS. Recent developments in flexible electronics compel an understanding of such structures under bending constraints. In this work, the behavior of interdigitated micro-electrodes when subjected to circular bending has been theoretically and experimentally studied through changes in capacitance. An analytical model has been developed to calculate the expected variation in capacitance of such structures while undergoing outward and inward bending along the direction perpendicular to the electrodes. The model combines conformal mapping techniques to account for the electric field redistribution and fundamental aspects of solid mechanics in order to define the geometrical deformation of the electrodes while bending. To experimentally verify our theoretical predictions, several interdigitated electrode structures with different geometries were fabricated on polymeric substrates by means of photolithography. The samples, placed in a customized bending setup, were bent to controlled radii of curvature while measuring their capacitance. A maximum variation in capacitance of less than 3% was observed at a minimum radius of curvature of 2.5 mm for all the devices tested with very thin electrodes whereas changes of up to 7% were found on stiffer, plated electrodes. Larger or smaller variations would be possible, in theory, by adjusting the geometry of the device. This work establishes a useful predictive tool for the design and evaluation of truly flexible/bendable electronics consisting of interdigitated structures, allowing one to tune the bending influence on the capacitance value through geometrical design

MEMS sensors and wireless telemetry for distributed systems

Energy Technology Data Exchange (ETDEWEB)

Britton, C.L. Jr.; Warmack, R.J.; Smith, S.F. [and others

1998-02-01

Selectively coated cantilevers are being developed at ORNL for chemical and biological sensing. The sensitivity can exceed that of other electro-mechanical devices as parts-per-trillion detection can be demonstrated for certain species. The authors are now proceeding to develop systems that employ electrically readable microcantilevers in a standard MEMS process and standard CMOS processes. One of their primary areas of interest is chemical sensing for environmental applications. Towards this end, they are presently developing electronic readout of a mercury-sensitive coated cantilever. In order to field arrays of distributed sensors, a wireless network for data reporting is needed. For this, the authors are developing on-chip spread-spectrum encoding and modulation circuitry to improve the robustness and security of sensor data in typical interference- and multipath-impaired environments. They have also provided for a selection of distinct spreading codes to serve groups of sensors in a common environment by the application of code-division multiple-access techniques. Most of the RF circuitry they have designed and fabricated in 0.5 {micro}m CMOS has been tested and verified operational to above 1 GHz. The initial intended operation is for use in the 915 MHz Industrial, Scientific, and Medical (ISM) band. This paper presents measured data on the microcantilever-based mercury detector. They also present design data and measurements of the RF telemetry chip.

MEMS fluidic actuator

Science.gov (United States)

Kholwadwala, Deepesh K [Albuquerque, NM; Johnston, Gabriel A [Trophy Club, TX; Rohrer, Brandon R [Albuquerque, NM; Galambos, Paul C [Albuquerque, NM; Okandan, Murat [Albuquerque, NM

2007-07-24

The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

MEMS cost analysis from laboratory to industry

CERN Document Server

Freng, Ron Lawes

2016-01-01

The World of MEMS; Chapter 2: Basic Fabrication Processes; Chapter 3: Surface Microengineering. High Aspect Ratio Microengineering; Chapter 5: MEMS Testing; Chapter 6: MEMS Packaging. Clean Rooms, Buildings and Plant; Chapter 8: The MEMSCOST Spreadsheet; Chapter 9: Product Costs - Accelerometers. Product Costs - Microphones. MEMS Foundries. Financial Reporting and Analysis. Conclusions.

A novel flexible capacitive touch pad based on graphene oxide film

Science.gov (United States)

Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

2013-01-01

Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch ``ON'' to ``OFF'' voltage ratio up to ~60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

A novel flexible capacitive touch pad based on graphene oxide film.

Science.gov (United States)

Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

2013-02-07

Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch "ON" to "OFF" voltage ratio up to ∼60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

Modeling nonlinearities in MEMS oscillators.

Science.gov (United States)

Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

2013-08-01

We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

A Teaching - Learning Framework for MEMS Education

International Nuclear Information System (INIS)

Sheeparamatti, B G; Angadi, S A; Sheeparamatti, R B; Kadadevaramath, J S

2006-01-01

Micro-Electro-Mechanical Systems (MEMS) technology has been identified as one of the most promising technologies in the 21st century. MEMS technology has opened up a wide array of unforeseen applications. Hence it is necessary to train the technocrats of tomorrow in this emerging field to meet the industrial/societal demands. The drive behind fostering of MEMS technology is the reduction in the cost, size, weight, and power consumption of the sensors, actuators, and associated electronics. MEMS is a multidisciplinary engineering and basic science area which includes electrical engineering, mechanical engineering, material science and biomedical engineering. Hence MEMS education needs a special approach to prepare the technocrats for a career in MEMS. The modern education methodology using computer based training systems (CBTS) with embedded modeling and simulation tools will help in this direction. The availability of computer based learning resources such as MATLAB, ANSYS/Multiphysics and rapid prototyping tools have contributed to proposition of an efficient teaching-learning framework for MEMS education presented in this paper. This paper proposes a conceptual framework for teaching/learning MEMS in the current technical education scenario

Micro electromechanical systems (MEMS) for mechanical engineers

Energy Technology Data Exchange (ETDEWEB)

Lee, A. P., LLNL

1996-11-18

The ongoing advances in Microelectromechanical Systems (MEMS) are providing man-kind the freedom to travel to dimensional spaces never before conceivable. Advances include new fabrication processes, new materials, tailored modeling tools, new fabrication machines, systems integration, and more detailed studies of physics and surface chemistry as applied to the micro scale. In the ten years since its inauguration, MEMS technology is penetrating industries of automobile, healthcare, biotechnology, sports/entertainment, measurement systems, data storage, photonics/optics, computer, aerospace, precision instruments/robotics, and environment monitoring. It is projected that by the turn of the century, MEMS will impact every individual in the industrial world, totaling sales up to $14 billion (source: System Planning Corp.). MEMS programs in major universities have spawned up all over the United States, preparing the brain-power and expertise for the next wave of MEMS breakthroughs. It should be pointed out that although MEMS has been initiated by electrical engineering researchers through the involvement of IC fabrication techniques, today it has evolved such that it requires a totally multi-disciplinary team to develop useful devices. Mechanical engineers are especially crucial to the success of MEMS development, since 90% of the physical realm involved is mechanical. Mechanical engineers are needed for the design of MEMS, the analysis of the mechanical system, the design of testing apparatus, the implementation of analytical tools, and the packaging process. Every single aspect of mechanical engineering is being utilized in the MEMS field today, however, the impact could be more substantial if more mechanical engineers are involved in the systems level designing. In this paper, an attempt is made to create the pathways for a mechanical engineer to enter in the MEMS field. Examples of application in optics and medical devices will be used to illustrate how mechanical

European MEMS foundries

Science.gov (United States)

Salomon, Patric R.

2003-01-01

According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

MEMS linear and nonlinear statics and dynamics

CERN Document Server

Younis, Mohammad I

2011-01-01

MEMS Linear and Nonlinear Statics and Dynamics presents the necessary analytical and computational tools for MEMS designers to model and simulate most known MEMS devices, structures, and phenomena. This book also provides an in-depth analysis and treatment of the most common static and dynamic phenomena in MEMS that are encountered by engineers. Coverage also includes nonlinear modeling approaches to modeling various MEMS phenomena of a nonlinear nature, such as those due to electrostatic forces, squeeze-film damping, and large deflection of structures. The book also: Includes examples of nume

Surface chemistry and tribology of MEMS.

Science.gov (United States)

Maboudian, Roya; Carraro, Carlo

2004-01-01

The microscopic length scale and high surface-to-volume ratio, characteristic of microelectro-mechanical systems (MEMS), dictate that surface properties are of paramount importance. This review deals with the effects of surface chemical treatments on tribological properties (adhesion, friction, and wear) of MEMS devices. After a brief review of materials and processes that are utilized in MEMS technology, the relevant tribological and chemical issues are discussed. Various MEMS microinstruments are discussed, which are commonly employed to perform adhesion, friction, and wear measurements. The effects of different surface treatments on the reported tribological properties are discussed.

Design of Surface micromachined Compliant MEMS

Energy Technology Data Exchange (ETDEWEB)

Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

2001-01-01

The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMS, most have used comb-drive actuation methods and bulk micromachining processes. This research focuses on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

Design of Surface Micromachined Compliant MEMS

Energy Technology Data Exchange (ETDEWEB)

Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

2002-12-31

The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMs, most have used comb-drive actuation methods and bulk micromachining processes. This research focused on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

Science.gov (United States)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

Impact of device engineering on analog/RF performances of tunnel field effect transistors

Science.gov (United States)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

Electrostatic MEMS devices with high reliability

Science.gov (United States)

Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

2015-02-24

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Electron Heating Mode Transitions in Nitrogen (13.56 and 40.68) MHz RF-CCPs

Science.gov (United States)

Erozbek Gungor, Ummugul; Bilikmen, Sinan Kadri; Akbar, Demiral

2015-09-01

Capacitively coupled radio frequency plasmas (RF-CCPs) are commonly used in plasma material processing. Parametrical structure of the plasma determines the demands of processing applications. For example; high density plasmas in gamma mode are mostly preferred for etching applications while stabile plasmas in gamma mode are usually used in sputtering applications. For this reason, characterization of the plasma is very essential before surface modification of the materials. In this work, analysis of electron heating mode transition in high frequency (40.68 MHz) RF-CCP was deeply investigated. The plasma was generated in a home-made (500 × 400 mm2) stainless steel cylindrical reactor in which two identical (200 mm in diameter) electrodes were placed with 40 mm interval. In addition, L-type automatic matching network system was connected to the 40.68 MHz RF generator to get high accuracy. Moreover, the pure (99.995 %) nitrogen was used as an activation gas on account of having an appreciable impression in plasma processing applications. Furthermore, diagnostic measurements of the plasma were done by using the Impedans Langmuir single and double probe systems. It was found that two transition points; α- γ (pressure dependent) and γ- α (RF power dependent) were observed in both medium and high RF-CCPs. As a result, the α- γ pressure transition increased, whereas the γ- α power transition remained constant by changing the RF frequency sources.

Paschen like behavior in argon RF discharge

International Nuclear Information System (INIS)

Al-Jwaady, Y. I.

2011-01-01

A 13.56 MHz radio frequency inductively coupled discharge system is used in this work to study the relation between Argon gas pressure in the discharge chamber and the threshold breakdown RF power needed to create the discharge. Experimental results indicated that although the data involve some features related to the traditional Paschen relation used in Dc discharge, this relation cannot provide a quantitative description of experimental data. For such reason, a modified from Paschen relation is suggested. The modified relation provides good agreement with experimental data. Furthermore, it seems that the Paschen relation will have significant reflections on the behavior of the transit process from capacitive to inductive discharge. This is demonstrated by studying the transit region. (author)

Comparison of a hybrid model to a global model of atmospheric pressure radio-frequency capacitive discharges

International Nuclear Information System (INIS)

Lazzaroni, C; Lieberman, M A; Lichtenberg, A J; Chabert, P

2012-01-01

A one-dimensional hybrid analytical-numerical global model of atmospheric pressure radio-frequency (rf) driven capacitive discharges, previously developed, is compared with a basic global model. A helium feed gas with small admixtures of oxygen is studied. For the hybrid model, the electrical characteristics are calculated analytically as a current-driven homogeneous discharge. The electron power balance is solved analytically to determine a time-varying Maxwellian electron temperature, which oscillates on the rf timescale. Averaging over the rf period yields effective rate coefficients for gas phase activated processes. For the basic global model, the electron temperature is constant in time and the sheath physics is neglected. For both models, the particle balance relations for all species are integrated numerically to determine the equilibrium discharge parameters. Variations of discharge parameters with composition and rf power are determined and compared. The rate coefficients for electron-activated processes are strongly temperature dependent, leading to significantly larger neutral and charged particle densities for the hybrid model. For small devices, finite sheath widths limit the operating regimes to low O 2 fractions. This is captured by the hybrid model but cannot be predicted from the basic global model.

Design of a MEMS Capacitive Comb-drive Micro-accelerometer with Sag Optimization

Directory of Open Access Journals (Sweden)

B. D. PANT

2009-10-01

Full Text Available The current paper presents an optimization study for the designing of a highly sensitive inertial grade capacitive accelerometer based on comb-drive actuation and sensing. The proof mass, suspension system (beams or tethers, stators and rotors have to be realized through an HAR (high aspect ratio DRIE (deep reactive ion etching process for which process optimization has already been done at our laboratory. As the proof mass is a bulk micro-machined structure having a mass in milligram range, the optimum positioning of the tethers on the proof mass is important to have minimum sag, necessary to reduce the off-axis sensitivity. The optimization for the positioning of the tethers has been carried out using a commercial software tool ANSYSTM Multiphysics. The accelerometer has been modeled analytically to predict its characteristics. The dependency of sensitivity on the dimensions of the suspension beams (tethers has also been verified using the above FEM software tool. The present device has been designed to deliver a high sensitivity of 13.6 mV/g/V for low-g applications.

Integrated design of MEMS

DEFF Research Database (Denmark)

De Grave, Arnaud; Brissaud, Daniel

2007-01-01

Emerging technologies of Micro-Electromechanical Systems (MEMS) are applications such as airbag accelerometers. Micro-products present many physical differences from macro-products. Moreover, there is a high level of integration in multiple fields of physics with strongly coupled effects...... industrial immersion to propose a socio-technological description of the design process and MEMS design tools....

False capacitance of supercapacitors

OpenAIRE

Ragoisha, G. A.; Aniskevich, Y. M.

2016-01-01

Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

Piezoelectric MEMS resonators

CERN Document Server

Piazza, Gianluca

2017-01-01

This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associate...

Adhesion aspects in MEMS/NEMS

CERN Document Server

Kim, Seong H; Mittal, Kash L

2012-01-01

Phenomena associated with the adhesion interaction of surfaces have been a critical aspect of micro- and nanosystem development and performance since the first MicroElectroMechanicalSystems(MEMS) were fabricated. These phenomena are ubiquitous in nature and are present in all systems, however MEMS devices are particularly sensitive to their effects owing to their small size and limited actuation force that can be generated. Extension of MEMS technology concepts to the nanoscale and development of NanoElectroMechanicalSystems(NEMS) will result in systems even more strongly influenced by surface

A six degrees of freedom mems manipulator

NARCIS (Netherlands)

de Jong, B.R.

2006-01-01

This thesis reports about a six degrees of freedom (DOF) precision manipulator in MEMS, concerning concept generation for the manipulator followed by design and fabrication (of parts) of the proposed manipulation concept in MEMS. Researching the abilities of 6 DOF precision manipulation in MEMS is

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa

2015-05-18

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa; Beidaghi, Majid; Chen, Wei; Wang, Chunlei

2015-01-01

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

A new interface weak-capacitance detection ASIC of capacitive liquid level sensor in the rocket

Science.gov (United States)

Yin, Liang; Qin, Yao; Liu, Xiao-Wei

2017-11-01

A new capacitive liquid level sensing interface weak-capacitance detection ASIC has been designed. This ASIC realized the detection of the output capacitance of the capacitive liquid level sensor, which converts the output capacitance of the capacitive liquid level sensor to voltage. The chip is fabricated in a standard 0.5μm CMOS process. The test results show that the linearity of capacitance detection of the ASIC is 0.05%, output noise is 3.7aF/Hz (when the capacitance which will be detected is 40 pF), the stability of capacitance detection is 7.4 × 10-5pF (1σ, 1h), the output zero position temperature coefficient is 4.5 uV/∘C. The test results prove that this interface ASIC can meet the requirement of high accuracy capacitance detection. Therefore, this interface ASIC can be applied in capacitive liquid level sensing and capacitive humidity sensing field.

Miniaturized GPS/MEMS IMU integrated board

Science.gov (United States)

Lin, Ching-Fang (Inventor)

2012-01-01

This invention documents the efforts on the research and development of a miniaturized GPS/MEMS IMU integrated navigation system. A miniaturized GPS/MEMS IMU integrated navigation system is presented; Laser Dynamic Range Imager (LDRI) based alignment algorithm for space applications is discussed. Two navigation cameras are also included to measure the range and range rate which can be integrated into the GPS/MEMS IMU system to enhance the navigation solution.

Going Fabless with MEMS

Directory of Open Access Journals (Sweden)

Bhaskar CHOUBEY

2011-04-01

Full Text Available The Microelectromechanical sensors are finding increasing applications in everyday life. However, each MEMS sensor is generally fabricated on its own individual process. This leads to high cost per sensor. It has been suggested the MEMS should and would follow the path of integrated circuits industry, wherein fabless firms could concentrate on design leading pure-foundries to perfect the manufacturing process. With several designs being manufactured on the same process, the installation cost of fabrication would be evenly shared. Simultaneously, multiple project wafer runs are being offered for MEMS processes to encourage design activity in universities as well as startups. This paper reviews the present state of this transition through an experience of designing and manufacturing microelectromechanical resonators on different processes.

Structured synthesis of MEMS using evolutionary approaches

DEFF Research Database (Denmark)

Fan, Zhun; Wang, Jiachuan; Achiche, Sofiane

2008-01-01

In this paper, we discuss the hierarchy that is involved in a typical MEMS design and how evolutionary approaches can be used to automate the hierarchical synthesis process for MEMS. The paper first introduces the flow of a structured MEMS design process and emphasizes that system-level lumped...

Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET

Science.gov (United States)

Kumar, Gagan; Raman, Ashish

2016-12-01

Micro-electromechanical systems (MEMS) technology has enticed numerous scientists since recent decades particularly in the field of miniaturized-sensors and actuators. Pressure sensor is pivotal component in both of the forerunning fields. The pursuance of a pressure sensor is exigently relying upon its different physical properties i.e. Piezo-resistive, Piezoelectric, Capacitive, Magnetic and Electrostatic. This article presents an outline and scrutiny of the Doping-less Cantilever Based Pressure Sensor using tunnel field effect transistor technology. The propounded pressure sensor based on the principle of capacitive gate coupling, due to which the tunneling current is modified. Additionally, to enhance the affectability of pressure sensor, the work function of metal gate electrode is amended using gas molecule diffusion. Simulation uncovers a phenomenal relationship amongst hypothetical and practical accepts of configuration. The pressure sensor is composed at Silvaco Atlas tool utilizing 40 nm technologies. The performance results exhibit that the proposed model consumes ≤1 mW power and 250 μA tunneling current per nm bending of cantilever beam structure. The inclusive length of the proposed device is 100 nm.

MEMS- and NEMS-based complex adaptive smart devices and systems

Science.gov (United States)

Varadan, Vijay K.

2001-10-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with feature sizes now down at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic and micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nanotubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems.

Determination of electron density and temperature in a capacitively coupled RF discharge in neon by OES complemented with a CR model

Energy Technology Data Exchange (ETDEWEB)

Navratil, Z; Dvorak, P; Trunec, D [Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno (Czech Republic); Brzobohaty, O, E-mail: zdenek@physics.muni.c [Institute of Scientific Instruments of the ASCR, v.v.i., Academy of Sciences of the Czech Republic, Kralovopolska 147, 612 64 Brno (Czech Republic)

2010-12-22

A method of determination of electron temperature and electron density in plasmas based on optical emission spectroscopy complemented with collisional-radiative modelling (OES/CRM) was studied in this work. A radiofrequency (13.56 MHz) capacitively coupled discharge in neon at 10 Pa was investigated by intensity calibrated optical emission spectroscopy. The absolute intensities of neon transitions between 3p and 3s states were fitted with a collisional-radiative (CR) model in order to determine the electron temperature and electron density. Measuring techniques such as imaging with an ICCD camera were adopted for supplementary diagnostics. The obtained results were compared with the results of compensated Langmuir probe measurement and one-dimensional particle-in-cell/Monte Carlo (PIC/MC) simulation. The results of OES/CRM and PIC/MC method were in close agreement in the case of electron temperature in the vicinity of a driven electrode. The determined value of electron temperature was about 8 eV. In bulk plasma, the measured spectra were not satisfactorily fitted. In the case of electron density only relative agreement was obtained between OES/CRM and Langmuir probe measurement; the absolute values differed by a factor of 5. The axial dependence of electron density calculated by PIC/MC was distinct from them, reaching the maximum values between the results of the other two methods. The investigation of power dependence of plasma parameters close to the driven electrode showed a decrease in electron temperature and an increase in electron density together with increasing incoming RF power. The calculated spectra fitted very well the measured spectra in this discharge region.

MEMS reliability: coming of age

Science.gov (United States)

Douglass, Michael R.

2008-02-01

In today's high-volume semiconductor world, one could easily take reliability for granted. As the MOEMS/MEMS industry continues to establish itself as a viable alternative to conventional manufacturing in the macro world, reliability can be of high concern. Currently, there are several emerging market opportunities in which MOEMS/MEMS is gaining a foothold. Markets such as mobile media, consumer electronics, biomedical devices, and homeland security are all showing great interest in microfabricated products. At the same time, these markets are among the most demanding when it comes to reliability assurance. To be successful, each company developing a MOEMS/MEMS device must consider reliability on an equal footing with cost, performance and manufacturability. What can this maturing industry learn from the successful development of DLP technology, air bag accelerometers and inkjet printheads? This paper discusses some basic reliability principles which any MOEMS/MEMS device development must use. Examples from the commercially successful and highly reliable Digital Micromirror Device complement the discussion.

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics: comparison with optical emission spectroscopy and fluid model simulation

Science.gov (United States)

Xiang, HE; Chong, LIU; Yachun, ZHANG; Jianping, CHEN; Yudong, CHEN; Xiaojun, ZENG; Bingyan, CHEN; Jiaxin, PANG; Yibing, WANG

2018-02-01

The capacitively coupled radio frequency (CCRF) plasma has been widely used in various fields. In some cases, it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma. In this paper, a glass vacuum chamber and a pair of plate electrodes were designed and fabricated, using 13.56 MHz radio frequency (RF) discharge technology to ionize the working gas of Ar. This discharge was mathematically described with equivalent circuit model. The discharge voltage and current of the plasma were measured at different pressures and different powers. Based on the capacitively coupled homogeneous discharge model, the equivalent circuit and the analytical formula were established. The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation. The experimental results show that when RF discharge power is 50-300 W and pressure is 25-250 Pa, the average electron temperature is about 1.7-2.1 eV and the average electron density is about 0.5 × 1017-3.6 × 1017 m-3. Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

Electromagnetic actuation in MEMS switches

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de; Mátéfi-Tempfli, Mária; Chemnitz, Steffen

. Electromagnetic actuation is a very promising approach to operate such MEMS and Power MEMS devices, due to the long range, reproducible and strong forces generated by this method, among other advantages. However, the use of electromagnetic actuation in such devices requires the use of thick magnetic films, which...

Optimization and simulation of MEMS rectilinear ion trap

Directory of Open Access Journals (Sweden)

Huang Gang

2015-04-01

Full Text Available In this paper, the design of a MEMS rectilinear ion trap was optimized under simulated conditions. The size range of the MEMS rectilinear ion trap’s electrodes studied in this paper is measured at micron scale. SIMION software was used to simulate the MEMS rectilinear ion trap with different sizes and different radio-frequency signals. The ion-trapping efficiencies of the ion trap under these different simulation conditions were obtained. The ion-trapping efficiencies were compared to determine the performance of the MEMS rectilinear ion trap in different conditions and to find the optimum conditions. The simulation results show that for the ion trap at micron scale or smaller, the optimized length–width ratio was 0.8, and a higher frequency of radio-frequency signal is necessary to obtain a higher ion-trapping efficiency. These results have a guiding role in the process of developing MEMS rectilinear ion traps, and great application prospects in the research fields of the MEMS rectilinear ion trap and the MEMS mass spectrometer.

Narrow gap electronegative capacitive discharges

Energy Technology Data Exchange (ETDEWEB)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

2013-10-15

Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

Electron drift velocity in SF{sub 6} in strong electric fields determined from rf breakdown curves

Energy Technology Data Exchange (ETDEWEB)

Lisovskiy, V; Yegorenkov, V [Department of Physics and Technology, Kharkov National University, Svobody sq.4, Kharkov 61077 (Ukraine); Booth, J-P [Laboratoire de Physique des Plasmas, Ecole Polytechnique, Palaiseau 91128 (France); Landry, K [Unaxis Displays Division France SAS, 5, Rue Leon Blum, Palaiseau 91120 (France); Douai, D [Physical Sciences Division, Institute for Magnetic Fusion Research, CEA Centre de Cadarache, F-13108 Saint Paul lez Durance Cedex (France); Cassagne, V, E-mail: lisovskiy@yahoo.co [Developpement Photovoltaique Couches Minces, Total, 2, place Jean Millier, La Defense 6, 92400 Courbevoie (France)

2010-09-29

This paper presents measurements of the electron drift velocity V{sub dr} in SF{sub 6} gas for high reduced electric fields (E/N = 330-5655 Td (1 Td = 10{sup -17} V cm{sup 2})). The drift velocities were obtained using the method of Lisovskiy and Yegorenkov (1998 J. Phys. D: Appl. Phys. 31 3349) based on the determination of the pressure and voltage of the turning points of rf capacitive discharge breakdown curves for a range of electrode spacings. The V{sub dr} values thus obtained were in good agreement with those calculated from the cross-sections of Phelps and Van Brunt (1988 J. Appl. Phys. 64 4269) using the BOLSIG code. The validity of the Lisovskiy-Yegorenkov method is discussed and we show that it is applicable over the entire E/N range where rf discharge ignition at breakdown occurs for rf frequencies of 13.56 MHz or above.

MEMS-based transmission lines for microwave applications

Science.gov (United States)

Wu, Qun; Fu, Jiahui; Gu, Xuemai; Shi, Huajuan; Lee, Jongchul

2003-04-01

This paper mainly presents a briefly review for recent progress in MEMS-based transmission lines for use in microwave and millimeterwave range. MEMS-based transmission lines including different transmission line structure such as membrane-supported microstrip line microstrip line, coplanar microshield transmission line, LIGA micromachined planar transmission line, micromachined waveguides and coplanar waveguide are discussed. MEMS-based transmission lines are characterized by low propagation loss, wide operation frequency band, low dispersion and high quality factor, in addition, the fabrication is compatible with traditional processing of integrated circuits (IC"s). The emergence of MEMS-based transmission lines provided a solution for miniaturizing microwave system and monolithic microwave integrated circuits.

MEMS/MOEMS foundry services at INO

Science.gov (United States)

García-Blanco, Sonia; Ilias, Samir; Williamson, Fraser; Généreux, Francis; Le Noc, Loïc; Poirier, Michel; Proulx, Christian; Tremblay, Bruno; Provençal, Francis; Desroches, Yan; Caron, Jean-Sol; Larouche, Carl; Beaupré, Patrick; Fortin, Benoit; Topart, Patrice; Picard, Francis; Alain, Christine; Pope, Timothy; Jerominek, Hubert

2010-06-01

In the MEMS manufacturing world, the "fabless" model is getting increasing importance in recent years as a way for MEMS manufactures and startups to minimize equipment costs and initial capital investment. In order for this model to be successful, the fabless company needs to work closely with a MEMS foundry service provider. Due to the lack of standardization in MEMS processes, as opposed to CMOS microfabrication, the experience in MEMS development processes and the flexibility of the MEMS foundry are of vital importance. A multidisciplinary team together with a complete microfabrication toolset allows INO to offer unique MEMS foundry services to fabless companies looking for low to mid-volume production. Companies that benefit from their own microfabrication facilities can also be interested in INO's assistance in conducting their research and development work during periods where production runs keep their whole staff busy. Services include design, prototyping, fabrication, packaging, and testing of various MEMS and MOEMS devices on wafers fully compatible with CMOS integration. Wafer diameters ranging typically from 1 inch to 6 inches can be accepted while 8-inch wafers can be processed in some instances. Standard microfabrication techniques such as metal, dielectric, and semiconductor film deposition and etching as well as photolithographic pattern transfer are available. A stepper permits reduction of the critical dimension to around 0.4 μm. Metals deposited by vacuum deposition methods include Au, Ag, Al, Al alloys, Ti, Cr, Cu, Mo, MoCr, Ni, Pt, and V with thickness varying from 5 nm to 2 μm. Electroplating of several materials including Ni, Au and In is also available. In addition, INO has developed and built a gold black deposition facility to answer customer's needs for broadband microbolometric detectors. The gold black deposited presents specular reflectance of less than 10% in the wavelength range from 0.2 μm to 100 μm with thickness ranging from

Advanced mechatronics and MEMS devices II

CERN Document Server

Wei, Bin

2017-01-01

This book introduces the state-of-the-art technologies in mechatronics, robotics, and MEMS devices in order to improve their methodologies. It provides a follow-up to "Advanced Mechatronics and MEMS Devices" (2013) with an exploration of the most up-to-date technologies and their applications, shown through examples that give readers insights and lessons learned from actual projects. Researchers on mechatronics, robotics, and MEMS as well as graduate students in mechanical engineering will find chapters on: Fundamental design and working principles on MEMS accelerometers Innovative mobile technologies Force/tactile sensors development Control schemes for reconfigurable robotic systems Inertial microfluidics Piezoelectric force sensors and dynamic calibration techniques ...And more. Authors explore applications in the areas of agriculture, biomedicine, advanced manufacturing, and space. Micro-assembly for current and future industries is also considered, as well as the design and development of micro and intel...

A novel compact model for on-chip stacked transformers in RF-CMOS technology

Science.gov (United States)

Jun, Liu; Jincai, Wen; Qian, Zhao; Lingling, Sun

2013-08-01

A novel compact model for on-chip stacked transformers is presented. The proposed model topology gives a clear distinction to the eddy current, resistive and capacitive losses of the primary and secondary coils in the substrate. A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided. The model is further verified by the excellent match between the measured and simulated S -parameters on the extracted parameters for a 1 : 1 stacked transformer manufactured in a commercial RF-CMOS technology.

Spatio-temporal analysis of the electron power absorption in electropositive capacitive RF plasmas based on moments of the Boltzmann equation

Science.gov (United States)

Schulze, J.; Donkó, Z.; Lafleur, T.; Wilczek, S.; Brinkmann, R. P.

2018-05-01

Power absorption by electrons from the space- and time-dependent electric field represents the basic sustaining mechanism of all radio-frequency driven plasmas. This complex phenomenon has attracted significant attention. However, most theories and models are, so far, only able to account for part of the relevant mechanisms. The aim of this work is to present an in-depth analysis of the power absorption by electrons, via the use of a moment analysis of the Boltzmann equation without any ad-hoc assumptions. This analysis, for which the input quantities are taken from kinetic, particle based simulations, allows the identification of all physical mechanisms involved and an accurate quantification of their contributions. The perfect agreement between the sum of these contributions and the simulation results verifies the completeness of the model. We study the relative importance of these mechanisms as a function of pressure, with high spatial and temporal resolution, in an electropositive argon discharge. In contrast to some widely accepted previous models we find that high space- and time-dependent ambipolar electric fields outside the sheaths play a key role for electron power absorption. This ambipolar field is time-dependent within the RF period and temporally asymmetric, i.e., the sheath expansion is not a ‘mirror image’ of the sheath collapse. We demonstrate that this time-dependence is mainly caused by a time modulation of the electron temperature resulting from the energy transfer to electrons by the ambipolar field itself during sheath expansion. We provide a theoretical proof that this ambipolar electron power absorption would vanish completely, if the electron temperature was constant in time. This mechanism of electron power absorption is based on a time modulated electron temperature, markedly different from the Hard Wall Model, of key importance for energy transfer to electrons on time average and, thus, essential for the generation of capacitively

The Micronium-A Musical MEMS instrument

NARCIS (Netherlands)

Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, Hylco; Beekman, Jethro G.; Fortgens, Laurens C.; de Graaf, Derk B.; Vocke, Sander; Abelmann, Leon

The Micronium is a musical instrument fabricated from silicon using microelectromechanical system (MEMS) technology. It is—to the best of our knowledge—the first musical micro-instrument fabricated using MEMS technology, where the actual sound is generated by mechanical microstructures. The

CMOS Silicon-on-Sapphire RF Tunable Matching Networks

Directory of Open Access Journals (Sweden)

Chamseddine Ahmad

2006-01-01

Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

A review of vibration-based MEMS piezoelectric energy harvesters

Energy Technology Data Exchange (ETDEWEB)

Saadon, Salem; Sidek, Othman [Collaborative Microelectronic Design Excellence Center (CEDEC), School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang (Malaysia)

2011-01-15

The simplicity associated with the piezoelectric micro-generators makes it very attractive for MEMS applications, especially for remote systems. In this paper we reviewed the work carried out by researchers during the last three years. The improvements in experimental results obtained in the vibration-based MEMS piezoelectric energy harvesters show very good scope for MEMS piezoelectric harvesters in the field of power MEMS in the near future. (author)

Design, simulation, fabrication, and characterization of MEMS vibration energy harvesters

Science.gov (United States)

Oxaal, John

Energy harvesting from ambient sources has been a longtime goal for microsystem engineers. The energy available from ambient sources is substantial and could be used to power wireless micro devices, making them fully autonomous. Self-powered wireless sensors could have many applications in for autonomous monitoring of residential, commercial, industrial, geological, or biological environments. Ambient vibrations are of particular interest for energy harvesting as they are ubiquitous and have ample kinetic energy. In this work a MEMS device for vibration energy harvesting using a variable capacitor structure is presented. The nonlinear electromechanical dynamics of a gap-closing type structure is experimentally studied. Important experimental considerations such as the importance of reducing off-axis vibration during testing, characterization methods, dust contamination, and the effect of grounding on parasitic capacitance are discussed. A comprehensive physics based model is developed and validated with two different microfabricated devices. To achieve maximal power, devices with high aspect ratio electrodes and a novel two-level stopper system are designed and fabricated. The maximum achieved power from the MEMS device when driven by sinusoidal vibrations was 3.38 muW. Vibrations from HVAC air ducts, which have a primary frequency of 65 Hz and amplitude of 155 mgrms, are targeted as the vibration source and devices are designed for maximal power harvesting potential at those conditions. Harvesting from the air ducts, the devices reached 118 nW of power. When normalized to the operating conditions, the best figure of merit of the devices tested was an order of magnitude above state-of-the-art of the devices (1.24E-6).

Investigation of Inonotus obliquus (Pers. Pil. Extracts and Melanins after RF-plasma Treatment of Raw Material

Directory of Open Access Journals (Sweden)

O.Yu. Kuznetsova

2016-03-01

Full Text Available High-frequency capacitive discharge (RF plasma at low pressure was used as preliminary stage for the intensification of extraction from natural medicinal raw material. RF-plasma treatment was carried out in two modes differed by the nature of plasma-forming gas. Chaga (Inonotus obliquus (Pers. Pil. known as the birch mushroom was selected as a perspective source of raw material. Extraction was carried out in two ways – remaceration and maceration. The analy-sis of chaga extracts and melanins was performed using traditional techniques including determination of physical and chemical, antioxidant and spectral characteristics. The obtained extracts and melanins were compared to the control samples and literature data. RF-plasma treatment of medicinal raw material increased the yield of extractive substances, in particular of the main active component of chaga – melanin. The antioxidant activity of chaga extracts grew, while for melanins it remained at the level similar to that of control samples. The IR spectral characteristics of the studied chaga melanins are similar and agree well with the literature data. Insignificant deviations in the position and intensity of absorption strips were observed for the samples after RF treatment. IR spectra of the studied chaga melanins are similar to those for mushroom melanins, thereby confirming the similarity in their nature. RF-plasma treatment of chaga medicinal raw materials allows to modify them partially. The structural and mechanical properties of melanins modified by RF plasma remain the same.

System-Level Modelling and Simulation of MEMS-Based Sensors

DEFF Research Database (Denmark)

Virk, Kashif M.; Madsen, Jan; Shafique, Mohammad

2005-01-01

The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration with the......The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration...... with the existing embedded system design methodologies is possible. In this paper, we present a MEMS design methodology that uses VHDL-AMS based system-level model of a MEMS device as a starting point and combines the top-down and bottom-up design approaches for design, verification, and optimization...

Capacitive chemical sensor

Science.gov (United States)

Manginell, Ronald P; Moorman, Matthew W; Wheeler, David R

2014-05-27

A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

Investigation of surface roughness in micro-electro discharge machining of nonconductive ZrO2 for MEMS application

International Nuclear Information System (INIS)

Sabur, A; Moudood, A; Ali, M Y; Maleque, M A

2013-01-01

Micro-electro discharge machining technique, a noncontact machining process, is applied for drilling blind hole on nonconductive ZrO 2 ceramic for MEMS application. A conductive layer of adhesive copper is applied on the workpiece surface to initiate the sparks. Kerosene is used as dielectric for creation of continuous conductive pyrolytic carbon layer on the machined surface. Experiments are conducted by varying the voltage (V), capacitance (C) and rotational speed (N). Correlating these variables a mathematical model for surface roughness (SR) is developed using Taguchi method. The results showed that the V and C are the significant parameters of SR in micro-EDM for nonconductive ZrO 2 ceramic. The model also showed that SR increases with the increase of V and C

MEMS-Based Waste Vibrational Energy Harvesters

Science.gov (United States)

2013-06-01

MEMS energy- harvesting device. Although PZT is used more prevalently due to its higher piezoelectric coefficient and dielectric constant, AlN has...7 1. Lead Zirconium Titanate ( PZT ) .........................................................7 2. Aluminum...Laboratory PiezoMUMPS Piezoelectric Multi-User MEMS Processes PZT Lead Zirconate Titanate SEM Scanning Electron Microscopy SiO2 Silicon

Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

Directory of Open Access Journals (Sweden)

Di Chen

2007-05-01

Full Text Available Electrostatic micro-electro-mechanical system (MEMS is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program

Energy Technology Data Exchange (ETDEWEB)

Schriner, H.; Davies, B.; Sniegowski, J.; Rodgers, M.S.; Allen, J.; Shepard, C.

1998-05-01

Research and development in the design and manufacture of Microelectromechanical Systems (MEMS) is growing at an enormous rate. Advances in MEMS design tools and fabrication processes at Sandia National Laboratories` Microelectronics Development Laboratory (MDL) have broadened the scope of MEMS applications that can be designed and manufactured for both military and commercial use. As improvements in micromachining fabrication technologies continue to be made, MEMS designs can become more complex, thus opening the door to an even broader set of MEMS applications. In an effort to further research and development in MEMS design, fabrication, and application, Sandia National Laboratories has launched the Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program or SAMPLES program. The SAMPLES program offers potential partners interested in MEMS the opportunity to prototype an idea and produce hardware that can be used to sell a concept. The SAMPLES program provides education and training on Sandia`s design tools, analysis tools and fabrication process. New designers can participate in the SAMPLES program and design MEMS devices using Sandia`s design and analysis tools. As part of the SAMPLES program, participants` designs are fabricated using Sandia`s 4 level polycrystalline silicon surface micromachine technology fabrication process known as SUMMiT (Sandia Ultra-planar, Multi-level MEMS Technology). Furthermore, SAMPLES participants can also opt to obtain state of the art, post-fabrication services provided at Sandia such as release, packaging, reliability characterization, and failure analysis. This paper discusses the components of the SAMPLES program.

A Nuclear Microbattery for MEMS Devices

International Nuclear Information System (INIS)

Blanchard, James; Henderson, Douglass; Lal, Amit

2002-01-01

This project was designed to demonstrate the feasibility of producing on-board power for MEMS devices using radioisotopes. MEMS is a fast growing field, with hopes for producing a wide variety of revolutionary applications, including ''labs on a chip,'' micromachined scanning tunneling microscopes, microscopic detectors for biological agents, microsystems for DNA identification, etc. Currently, these applications are limited by the lack of an on-board power source. Research is ongoing to study approaches such as fuel cells, fossil fuels, and chemical batteries, but all these concepts have limitations. For long-lived, high energy density applications, on-board radioisotope power offers the best choice. We have succeeded in producing such devices using a variety of isotopes, incorporation methods, and device geometries. These experiments have demonstrated the feasibility of using radioisotope power and that there are a variety of options available for MEMS designers. As an example of an integrated, self-powered application, we have created an oscillating cantilever beam that is capable of consistent, periodic oscillations over very long time periods without the need for refueling. Ongoing work will demonstrate that this cantilever is capable of radio frequency transmission, allowing MEMS devices to communicate with one another wirelessly. Thus, this will be the first self-powered wireless transmitter available for use in MEMS devices, permitting such applications as sensors embedded in buildings for continuous monitoring of the building performance and integrity

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

Standard semiconductor packaging for high-reliability low-cost MEMS applications

Science.gov (United States)

Harney, Kieran P.

2005-01-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

MEMS- and NEMS-based smart devices and systems

Science.gov (United States)

Varadan, Vijay K.

2001-11-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sized now don at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic an micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sensing and control of a variety functions in automobile, aerospace, marine and civil

Real-time control of electron density in a capacitively coupled plasma

International Nuclear Information System (INIS)

Keville, Bernard; Gaman, Cezar; Turner, Miles M.; Zhang Yang; Daniels, Stephen; Holohan, Anthony M.

2013-01-01

Reactive ion etching (RIE) is sensitive to changes in chamber conditions, such as wall seasoning, which have a deleterious effect on process reproducibility. The application of real time, closed loop control to RIE may reduce this sensitivity and facilitate production with tighter tolerances. The real-time, closed loop control of plasma density with RF power in a capacitively coupled argon plasma using a hairpin resonance probe as a sensor is described. Elementary control analysis shows that an integral controller provides stable and effective set point tracking and disturbance attenuation. The trade off between performance and robustness may be quantified in terms of one parameter, namely the position of the closed loop pole. Experimental results are presented, which are consistent with the theoretical analysis.

Digital reflection holography based systems development for MEMS testing

Science.gov (United States)

Singh, Vijay Raj; Liansheng, Sui; Asundi, Anand

2010-05-01

MEMS are tiny mechanical devices that are built onto semiconductor chips and are measured in micrometers and nanometers. Testing of MEMS device is an important part in carrying out their functional assessment and reliability analysis. Development of systems based on digital holography (DH) for MEMS inspection and characterization is presented in this paper. Two DH reflection systems, table-top and handheld types, are developed depending on the MEMS measurement requirements and their capabilities are presented. The methodologies for the systems are developed for 3D profile inspection and static & dynamic measurements, which is further integrated with in-house developed software that provides the measurement results in near real time. The applications of the developed systems are demonstrated for different MEMS devices for 3D profile inspection, static deformation/deflection measurements and vibration analysis. The developed systems are well suitable for the testing of MEMS and Microsystems samples, with full-field, static & dynamic inspection as well as to monitor micro-fabrication process.

MEMS Reliability: Infrastructure, Test Structures, Experiments, and Failure Modes

Energy Technology Data Exchange (ETDEWEB)

TANNER,DANELLE M.; SMITH,NORMAN F.; IRWIN,LLOYD W.; EATON,WILLIAM P.; HELGESEN,KAREN SUE; CLEMENT,J. JOSEPH; MILLER,WILLIAM M.; MILLER,SAMUEL L.; DUGGER,MICHAEL T.; WALRAVEN,JEREMY A.; PETERSON,KENNETH A.

2000-01-01

The burgeoning new technology of Micro-Electro-Mechanical Systems (MEMS) shows great promise in the weapons arena. We can now conceive of micro-gyros, micro-surety systems, and micro-navigators that are extremely small and inexpensive. Do we want to use this new technology in critical applications such as nuclear weapons? This question drove us to understand the reliability and failure mechanisms of silicon surface-micromachined MEMS. Development of a testing infrastructure was a crucial step to perform reliability experiments on MEMS devices and will be reported here. In addition, reliability test structures have been designed and characterized. Many experiments were performed to investigate failure modes and specifically those in different environments (humidity, temperature, shock, vibration, and storage). A predictive reliability model for wear of rubbing surfaces in microengines was developed. The root causes of failure for operating and non-operating MEMS are discussed. The major failure mechanism for operating MEMS was wear of the polysilicon rubbing surfaces. Reliability design rules for future MEMS devices are established.

A novel piezoresistive polymer nanocomposite MEMS accelerometer

International Nuclear Information System (INIS)

Seena, V; Hari, K; Prajakta, S; Ramgopal Rao, V; Pratap, Rudra

2017-01-01

A novel polymer MEMS (micro electro mechanical systems) accelerometer with photo-patternable polymer nanocomposite as a piezoresistor is presented in this work. Polymer MEMS Accelerometer with beam thicknesses of 3.3 µ m and embedded nanocomposite piezoresistive layer having a gauge factor of 90 were fabricated. The photosensitive nanocomposite samples were prepared and characterized for analyzing the mechanical and electrical properties and thereby ensuring proper process parameters for incorporating the piezoresistive layer into the polymer MEMS accelerometer. The microfabrication process flow and unit processes followed are extremely low cost with process temperatures below 100 °C. This also opens up a new possibility for easy integration of such polymer MEMS with CMOS (complementary metal oxide semiconductor) devices and circuits. The fabricated devices were characterized using laser Doppler vibrometer (LDV) and the devices exhibited a resonant frequency of 10.8 kHz and a response sensitivity of 280 nm g −1 at resonance. The main focus of this paper is on the SU-8/CB nanocomposite piezoresistive MEMS accelerometer technology development which covers the material and the fabrication aspects of these devices. CoventorWare FEA analysis performed using the extracted material properties from the experimental characterization which are in close agreement to performance parameters of the fabricated devices is also discussed. The simulated piezoresistive polymer MEMS devices showed an acceleration sensitivity of 126 nm g −1 and 82 ppm of Δ R / R per 1 g of acceleration. (paper)

Local and global particle and power balance in large area capacitive discharges

International Nuclear Information System (INIS)

Cho, Suwon; Lieberman, M A

2003-01-01

Large area radio frequency (rf) capacitive discharges have attracted recent interest for materials etching and deposition on large area substrates. A distinguishing feature is that the radial distribution of the absorbed rf power in these discharges depends on the rf voltage across the plates, independent of the radial variation of the plasma density n(r). A reduced set of steady-state fluid equations has been used to investigate the radial variation of n and electron temperature T e . The derived equations are shown to be invariant with respect to pL and pR, where p is the pressure, L is the plate separation and R is the discharge radius, and can be further reduced to the equations of the usual global balance model when R ε , the energy relaxation length. In this limit, the ionization frequency and T e are essentially independent of radius and n can be approximately described by the usual radial profile of a zeroth-order Bessel function. When R≥λ ε , n and T e are predominantly determined by local particle and power balance, and the n and T e radial profiles are flat over most of the volume except near the radial boundary, where n falls and T e rises to account for the increased losses at the boundary. The scale length of the edge density variation in the local balance regime is shown to be proportional to the energy relaxation length

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

High Volume Manufacturing and Field Stability of MEMS Products

Science.gov (United States)

Martin, Jack

Low volume MEMS/NEMS production is practical when an attractive concept is implemented with business, manufacturing, packaging, and test support. Moving beyond this to high volume production adds requirements on design, process control, quality, product stability, market size, market maturity, capital investment, and business systems. In a broad sense, this chapter uses a case study approach: It describes and compares the silicon-based MEMS accelerometers, pressure sensors, image projection systems, and gyroscopes that are in high volume production. Although they serve several markets, these businesses have common characteristics. For example, the manufacturing lines use automated semiconductor equipment and standard material sets to make consistent products in large quantities. Standard, well controlled processes are sometimes modified for a MEMS product. However, novel processes that cannot run with standard equipment and material sets are avoided when possible. This reliance on semiconductor tools, as well as the organizational practices required to manufacture clean, particle-free products partially explains why the MEMS market leaders are integrated circuit manufacturers. There are other factors. MEMS and NEMS are enabling technologies, so it can take several years for high volume applications to develop. Indeed, market size is usually a strong function of price. This becomes a vicious circle, because low price requires low cost - a result that is normally achieved only after a product is in high volume production. During the early years, IC companies reduced cost and financial risk by using existing facilities for low volume MEMS production. As a result, product architectures are partially determined by capabilities developed for previous products. This chapter includes a discussion of MEMS product architecture with particular attention to the impact of electronic integration, packaging, and surfaces. Packaging and testing are critical, because they are

Calibration of High Frequency MEMS Microphones

Science.gov (United States)

Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

2007-01-01

Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

Amorphous Diamond MEMS and Sensors

Energy Technology Data Exchange (ETDEWEB)

SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

2002-06-01

This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater

An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

Science.gov (United States)

Prashad, Har

1992-07-01

A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

MEMS tunable grating micro-spectrometer

Science.gov (United States)

Tormen, Maurizio; Lockhart, R.; Niedermann, P.; Overstolz, T.; Hoogerwerf, A.; Mayor, J.-M.; Pierer, J.; Bosshard, C.; Ischer, R.; Voirin, G.; Stanley, R. P.

2017-11-01

The interest in MEMS based Micro-Spectrometers is increasing due to their potential in terms of flexibility as well as cost, low mass, small volume and power savings. This interest, especially in the Near-Infrared and Mid- Infrared, ranges from planetary exploration missions to astronomy, e.g. the search for extra solar planets, as well as to many other terrestrial fields of application such as, industrial quality and surface control, chemical analysis of soil and water, detection of chemical pollutants, exhausted gas analysis, food quality control, process control in pharmaceuticals, to name a few. A compact MEMS-based Spectrometer for Near- Infrared and Mid-InfraRed operation have been conceived, designed and demonstrated. The design based on tunable MEMS blazed grating, developed in the past at CSEM [1], achieves state of the art results in terms of spectral resolution, operational wavelength range, light throughput, overall dimensions, and power consumption.

Micro-Electromechanical-Systems (MEMS) technologies for aerospace applications in Canada

International Nuclear Information System (INIS)

Pimprikar, M.

2001-01-01

During the last decade, research and development of Micro-Electro-Mechanical Systems (MEMS) have shown significant promise for a variety of aerospace applications. The advantages of drastic size and weight reduction of MEMS enables consideration of developing low-cost, high-performance, ultra-portable, MEMS-based devices and systems for aircraft, space and defense requirements. 'Microelectromechanical Systems, or MEMS', are integrated microdevices or systems combining electrical and mechanical components, fabricated using integrated circuit compatible batch-processing techniques, and varying in size from micrometers to millimeters. In the 1990's, MEMS were used as laboratory curiosities with very low power, short lifetimes and few concrete applications. One decade later, MEMS have taken major roles in several industries, the total world market is expected to grow from $14 billion to over $40 billion by the year 2002. A typical device contains micromechanical structures that move by flexing (membranes, cantilevers, springs) and MEMS/MOEMS level where the integration of microelectronics, micromechanics and optics form a complete system (sensor, actuator, photonic device). (author)

PREFACE: 14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2014)

Science.gov (United States)

2014-11-01

It is our great pleasure to welcome you to the 14th International Conference on Micro- and Nano-Technology for Power Generation and Energy Conversion Applications, or PowerMEMS 2014, in Awaji Island, Japan. The aim of PowerMEM is to present the latest research results in the field of miniature, micro- and nano-scale technologies for power generation and energy conversion. The conference will also- give us the opportunity to exchange informations and new ideas in the field of Power MEMS/NEMS. The current status of the field of PowerMEMS spans the full spectrum from basic research to practical applications. We will enjoy valuable discussions not only from the viewpoint of academia but from commercial and industrial perspectives. In the conference, three invited speakers lead the technical program. We received 172 abstracts and after a careful reviewing process by the Technical Program Committee a total of 133 papers were selected for presentation. These have been organized into 16 Oral sessions in two parallel streams and two poster sessions including some late-news papers. The oral and regular poster papers are published by the Institute of Physics (IOP). We have also organized a PowerMEMS School in Kobe-Sannomiya contiguous to the main conference. This two-day school will cover various topics of energy harvesting. World leading experts will give invited lectures on their main topics. This is a new experiment to broaden the technology remit of our conference by organizing mini symposiums that aim to gather the latest research on the following topics by the organizers: Microscale Combustion, Wideband Vibration Energy Harvesting, RF Energy Transfer and Industrial Application. We hope this, and other activities will make PowerMEMS2014 a memorable success. One of the important programs in an international conference is the social program, and we prepare the PowerMEMS2014 banquet in the banquet room at the Westin Awaji Island Hotel. This will provide an opportunity to

Ferroelectric negative capacitance domain dynamics

Science.gov (United States)

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2018-05-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

Evolution of a MEMS Photoacoustic Chemical Sensor

National Research Council Canada - National Science Library

Pellegrino, Paul M; Polcawich, Ronald G

2003-01-01

.... Initial MEMS work is centered on fabrication of a lead zirconate titanate (PZT) microphone subsystem to be incorporated in the full photoacoustic device. Preliminary results were very positive for the macro-photoacoustic cell, PZT membrane microphones design / fabrication and elementary monolithic MEMS photoacoustic cavity.

Rf probe technology for the next generation of technological plasmas

International Nuclear Information System (INIS)

Law, V.J.; Kenyon, A.J.; Thornhill, N.F.; Seeds, A.J.; Batty, I.

2001-01-01

We describe radio frequency (rf) analysis of technological plasmas at the 13.56 MHz fundamental drive frequency and integer narrow-band harmonics up to n = 9. In particular, we demonstrate the use of harmonic amplitude information as a process end-point diagnostic. Using very high frequency (vhf) techniques, we construct non-invasive ex situ remote-coupled probes: a diplexer, an equal-ratio-arm bridge, and a dual directional coupler used as a single directional device. These probes bolt into the plasma-tool 50 Ω transmission-line between the rf generator and matching network, and hence do not require modification of the plasma tool. The 50 Ω probe environment produces repeatable measurements of the chamber capacitance and narrow-band harmonic amplitude with an end-point detection sensitivity corresponding to a 2 dB change in the harmonic amplitude with the removal of 1 cm 2 of photoresist. The methodology and design of an instrument for the measurement of the plasma-tool frequency response, and the plasma harmonic amplitude and phase response are examined. The instrument allows the monitoring of the plasma phase delay, plasma-tool short- and long-term ageing, and process end-point prediction. (author)

Design of a multi-axis implantable MEMS sensor for intraosseous bone stress monitoring

International Nuclear Information System (INIS)

Alfaro, Fernando; Weiss, Lee; Campbell, Phil; Fedder, Gary K; Miller, Mark

2009-01-01

The capability to assess the biomechanical properties of living bone is important for basic research as well as the clinical management of skeletal trauma and disease. Even though radiodensitometric imaging is commonly used to infer bone quality, bone strength does not necessarily correlate well with these non-invasive measurements. This paper reports on the design, fabrication and initial testing of an implantable ultra-miniature multi-axis sensor for directly measuring bone stresses at a micro-scale. The device, which is fabricated with CMOS-MEMS processes, is intended to be permanently implanted within open fractures, or embedded in bone grafts, or placed on implants at the interfaces between bone and prosthetics. The stress sensor comprises an array of piezoresistive pixels to detect a stress tensor at the interfacial area between the MEMS chip and bone, with a resolution to 100 Pa, in 1 s averaging. The sensor system design and manufacture is also compatible with the integration of wireless RF telemetry, for power and data retrieval, all within a 3 mm × 3 mm × 0.3 mm footprint. The piezoresistive elements are integrated within a textured surface to enhance sensor integration with bone. Finite element analysis led to a sensor design for normal and shear stress detection. A wired sensor was fabricated in the Jazz 0.35 µm BiCMOS process and then embedded in mock bone material to characterize its response to tensile and bending loads up to 250 kPa

Wavelength tunable MEMS VCSELs for OCT imaging

DEFF Research Database (Denmark)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

2018-01-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

Construction and Initial Validation of the Multiracial Experiences Measure (MEM)

Science.gov (United States)

Yoo, Hyung Chol; Jackson, Kelly; Guevarra, Rudy P.; Miller, Matthew J.; Harrington, Blair

2015-01-01

This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across two studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one’s social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. PMID:26460977

Advanced MEMS systems for optical communication and imaging

International Nuclear Information System (INIS)

Horenstein, M N; Sumner, R; Freedman, D S; Datta, M; Kani, N; Miller, P; Stewart, J B; Cornelissen, S

2011-01-01

Optical communication and adaptive optics have emerged as two important uses of micro-electromechanical (MEMS) devices based on electrostatic actuation. Each application uses a mirror whose surface is altered by applying voltages of up to 300 V. Previous generations of adaptive-optic mirrors were large (∼1 m) and required the use of piezoelectric transducers. Beginning in the mid-1990s, a new class of small MEMS mirrors (∼1 cm) were developed. These mirrors are now a commercially available, mature technology. This paper describes three advanced applications of MEMS mirrors. The first is a mirror used for corona-graphic imaging, whereby an interferometric telescope blocks the direct light from a distant star so that nearby objects such as planets can be seen. We have developed a key component of the system: a 144-channel, fully-scalable, high-voltage multiplexer that reduces power consumption to only a few hundred milliwatts. In a second application, a MEMS mirror comprises part of a two-way optical communication system in which only one node emits a laser beam. The other node is passive, incorporating a retro-reflective, electrostatic MEMS mirror that digitally encodes the reflected beam. In a third application, the short (∼100-ns) pulses of a commercially-available laser rangefinder are returned by the MEMS mirror as a digital data stream. Suitable low-power drive systems comprise part of the system design.

Microfabrication and Characterization of an Integrated 3-Axis CMOS-MEMS Accelerometer

Directory of Open Access Journals (Sweden)

Hongwei QU

2007-10-01

Full Text Available This paper reports the fabrication and characterization of a monolithically integrated 3-axis CMOS-MEMS accelerometer with a single proof mass. An improved microfabrication process has been developed to solve the structure overheating and particle contamination problems in the plasma etching processes of device fabrication. The whole device is made of bulk silicon except for some short thin films for electrical isolation, allowing large sensing capacitance and flat device structure. A low-noise, low-power amplifier is designed for each axis, which provides 40 dB on-chip amplification and consumes only 1 mW power. Quasi-static and dynamic characterization of the fabricated device has been performed. The measured sensitivities of the lateral- and z-axis accelerometers are 560 mV/g and 320 mV/g, respectively, which can be tuned by simply varying the amplitude of the modulation signal. The over-all noise floors of the lateral- and z-axis are 12 μg/ÖHz and 110 μg/ÖHz, respectively when tested at 200 Hz.

Aspheric surface measurement using capacitive probes

Science.gov (United States)

Tao, Xin; Yuan, Daocheng; Li, Shaobo

2017-02-01

With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

Recent Progress in Silicon Mems Oscillators

Science.gov (United States)

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

Development of parallel-plate-based MEMS tunable capacitors with linearized capacitance–voltage response and extended tuning range

International Nuclear Information System (INIS)

Shavezipur, M; Nieva, P; Khajepour, A; Hashemi, S M

2010-01-01

This paper presents a design technique that can be used to linearize the capacitance–voltage (C–V) response and extend the tuning range of parallel-plate-based MEMS tunable capacitors beyond that of conventional designs. The proposed technique exploits the curvature of the capacitor's moving electrode which could be induced by either manipulating the stress gradients in the plate's material or using bi-layer structures. The change in curvature generates a nonlinear structural stiffness as the moving electrode undergoes out-of-plane deformation due to the actuation voltage. If the moving plate curvature is tailored such that the capacitance increment is proportional to the voltage increment, then a linear C–V response is obtained. The larger structural resistive force at higher bias voltage also delays the pull-in and increases the maximum tunability of the capacitor. Moreover, for capacitors containing an insulation layer between the two electrodes, the proposed technique completely eliminates the pull-in effect. The experimental data obtained from different capacitors fabricated using PolyMUMPs demonstrate the advantages of this design approach where highly linear C–V responses and tunabilities as high as 1050% were recorded. The design methodology introduced in this paper could be easily extended to for example, capacitive pressure and temperature sensors or infrared detectors to enhance their response characteristics.

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said; Sharaf, Abdel Hameed; Serry, Mohamed Yousef; Sedky, Sherif Salah

2014-01-01

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said

2014-02-04

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Power Management of MEMS-Based Storage Devices for Mobile Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

2008-01-01

Because of its small form factor, high capacity, and expected low cost, MEMS-based storage is a suitable storage technology for mobile systems. MEMS-based storage devices should also be energy efficient for deployment in mobile systems. The problem is that MEMS-based storage devices are mechanical,

Capacitively coupled radio-frequency discharges in nitrogen at low pressures

KAUST Repository

Alves, Luís Lemos

2012-07-06

This paper uses experiments and modelling to study capacitively coupled radio-frequency (rf) discharges in pure nitrogen, at 13.56MHz frequency, 0.11 mbar pressures and 230W coupled powers. Experiments performed on two similar (not twin) setups, existing in the LATMOS and the GREMI laboratories, include electrical and optical emission spectroscopy (OES) measurements. Electrical measurements give the rf-applied and the direct-current-self-bias voltages, the effective power coupled to the plasma and the average electron density. OES diagnostics measure the intensities of radiative transitions with the nitrogen second-positive and first-negative systems, and with the 811.5 nm atomic line of argon (present as an actinometer). Simulations use a hybrid code that couples a two-dimensional time-dependent fluid module, describing the dynamics of the charged particles (electrons and positive ions N 2 + and N 4 + ), and a zero-dimensional kinetic module, describing the production and destruction of nitrogen (atomic and molecular) neutral species. The coupling between these modules adopts the local mean energy approximation to define spacetime-dependent electron parameters for the fluid module and to work out spacetime-averaged rates for the kinetic module. The model gives general good predictions for the self-bias voltage and for the intensities of radiative transitions (both average and spatially resolved), underestimating the electron density by a factor of 34. © 2012 IOP Publishing Ltd.

Micro-electro-mechanical systems (MEMS: Technology for the 21st century

Directory of Open Access Journals (Sweden)

Đakov Tatjana A.

2014-01-01

Full Text Available Micro-electro-mechanical systems (MEMS are miniturized devices that can sense the environment, process and analyze information, and respond with a variety of mechanical and electrical actuators. MEMS consists of mechanical elements, sensors, actuators, electrical and electronics devices on a common silicon substrate. Micro-electro-mechanical systems are becoming a vital technology for modern society. Some of the advantages of MEMS devices are: very small size, very low power consumption, low cost, easy to integrate into systems or modify, small thermal constant, high resistance to vibration, shock and radiation, batch fabricated in large arrays, improved thermal expansion tolerance. MEMS technology is increasingly penetrating into our lives and improving quality of life, similar to what we experienced in the microelectronics revolution. Commercial opportunities for MEMS are rapidly growing in broad application areas, including biomedical, telecommunication, security, entertainment, aerospace, and more in both the consumer and industrial sectors on a global scale. As a breakthrough technology, MEMS is building synergy between previously unrelated fields such as biology and microelectronics. Many new MEMS and nanotechnology applications will emerge, expanding beyond that which is currently identified or known. MEMS are definitely technology for 21st century.

Fabrication of integrated metallic MEMS devices

DEFF Research Database (Denmark)

Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

2002-01-01

A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

Nonlinear Adaptive Filter for MEMS Gyro Error Cancellation

Data.gov (United States)

National Aeronautics and Space Administration — Thermal biases are the dominate error in low-cost low-power small MEMS gyros. CubeSats often can't afford the power/mass to put a heater on their MEMS gyros and...

Waveguide-Integrated MEMS Concepts for Tunable Millimeter-Wave Systems

OpenAIRE

Baghchehsaraei, Zargham

2014-01-01

This thesis presents two families of novel waveguide-integrated components based on millimeter-wave microelectromechanical systems (MEMS) for reconfigurable systems. The first group comprises V-band (50–75 GHz) and W-band (75–110 GHz) waveguide switches and switchable irises, and their application as switchable cavity resonators, and tunable bandpass filters implemented by integration of novel MEMS-reconfigurable surfaces into a rectangular waveguide. The second category comprises MEMS-based ...

A method for manufacturing a hollow mems structure

DEFF Research Database (Denmark)

2017-01-01

The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom...... further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor....

MEMS (Micro-Electro-Mechanical Systems) for Automotive and Consumer Electronics

Science.gov (United States)

Marek, Jiri; Gómez, Udo-Martin

MEMS sensors gained over the last two decades an impressive width of applications: (a) ESP: A car is skidding and stabilizes itself without driver intervention (b) Free-fall detection: A laptop falls to the floor and protects the hard drive by parking the read/write drive head automatically before impact. (c) Airbag: An airbag fires before the driver/occupant involved in an impending automotive crash impacts the steering wheel, thereby significantly reducing physical injury risk. MEMS sensors are sensing the environmental conditions and are giving input to electronic control systems. These crucial MEMS sensors are making system reactions to human needs more intelligent, precise, and at much faster reaction rates than humanly possible. Important prerequisites for the success of sensors are their size, functionality, power consumption, and costs. This technical progress in sensor development is realized by micro-machining. The development of these processes was the breakthrough to industrial mass-production for micro-electro-mechanical systems (MEMS). Besides leading-edge micromechanical processes, innovative and robust ASIC designs, thorough simulations of the electrical and mechanical behaviour, a deep understanding of the interactions (mainly over temperature and lifetime) of the package and the mechanical structures are needed. This was achieved over the last 20 years by intense and successful development activities combined with the experience of volume production of billions of sensors. This chapter gives an overview of current MEMS technology, its applications and the market share. The MEMS processes are described, and the challenges of MEMS, compared to standard IC fabrication, are discussed. The evolution of MEMS requirements is presented, and a short survey of MEMS applications is shown. Concepts of newest inertial sensors for ESP-systems are given with an emphasis on the design concepts of the sensing element and the evaluation circuit for achieving

Modularly Integrated MEMS Technology

National Research Council Canada - National Science Library

Eyoum, Marie-Angie N

2006-01-01

Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation...

Vibration-Induced Errors in MEMS Tuning Fork Gyroscopes with Imbalance.

Science.gov (United States)

Fang, Xiang; Dong, Linxi; Zhao, Wen-Sheng; Yan, Haixia; Teh, Kwok Siong; Wang, Gaofeng

2018-05-29

This paper discusses the vibration-induced error in non-ideal MEMS tuning fork gyroscopes (TFGs). Ideal TFGs which are thought to be immune to vibrations do not exist, and imbalance between two gyros of TFGs is an inevitable phenomenon. Three types of fabrication imperfections (i.e., stiffness imbalance, mass imbalance, and damping imbalance) are studied, considering different imbalance radios. We focus on the coupling types of two gyros of TFGs in both drive and sense directions, and the vibration sensitivities of four TFG designs with imbalance are simulated and compared. It is found that non-ideal TFGs with two gyros coupled both in drive and sense directions (type CC TFGs) are the most insensitive to vibrations with frequencies close to the TFG operating frequencies. However, sense-axis vibrations with in-phase resonant frequencies of a coupled gyros system result in severe error outputs to TFGs with two gyros coupled in the sense direction, which is mainly attributed to the sense capacitance nonlinearity. With increasing stiffness coupled ratio of the coupled gyros system, the sensitivity to vibrations with operating frequencies is cut down, yet sensitivity to vibrations with in-phase frequencies is amplified.

MEMS for pico- to micro-satellites

OpenAIRE

Shea, Herbert

2009-01-01

MEMS sensors, actuators, and sub-systems can enable an important reduction in the size and mass of spacecrafts, first by replacing larger and heavier components, then by replacing entire subsystems, and finally by enabling the microfabrication of highly integrated picosats. Very small satellites (1 to 100 kg) stand to benefit the most from MEMS technologies. These small satellites are typically used for science or technology demonstration missions, with higher risk tolerance than multi-ton te...

Efficiency of Capacitively Loaded Converters

DEFF Research Database (Denmark)

Andersen, Thomas; Huang, Lina; Andersen, Michael A. E.

2012-01-01

This paper explores the characteristic of capacitance versus voltage for dielectric electro active polymer (DEAP) actuator, 2kV polypropylene film capacitor as well as 3kV X7R multi layer ceramic capacitor (MLCC) at the beginning. An energy efficiency for capacitively loaded converters...... is introduced as a definition of efficiency. The calculated and measured efficiency curves for charging DEAP actuator, polypropylene film capacitor and X7R MLCC are provided and compared. The attention has to be paid for the voltage dependent capacitive load, like X7R MLCC, when evaluating the charging...... polypropylene film capacitor can be the equivalent capacitive load. Because of the voltage dependent characteristic, X7R MLCC cannot be used to replace the DEAP actuator. However, this type of capacitor can be used to substitute the capacitive actuator with voltage dependent property at the development phase....

Analysis and design of a high-linearity receiver RF front-end with an improved 25%-duty-cycle LO generator for WCDMA/GSM applications

International Nuclear Information System (INIS)

Hu Song; Li Weinan; Huang Yumei; Hong Zhiliang

2012-01-01

A fully integrated receiver RF front-end that meets WCDMA/GSM system requirements is presented. It supports SAW-less operation for WCDMA. To improve the linearity in terms of both IP3 and IP2, the RF front-end is comprised of multiple-gated LNAs with capacitive desensitization, current-mode passive mixers with the proposed IP2 calibration circuit and reconfigurable Tow-Thomas-like biquad TIAs. A new power-saving multi-mode divider with low phase noise is proposed to provide the 4-phase 25%-duty-cycle LO. In addition, a constant-g m biasing with a non-chip resistor is adopted to make the conversion gain invulnerable to the process and temperature variations of the transimpedance. This RF front-end is integrated in a receiver with an on-chip frequency synthesizer in 0.13 μm CMOS. The measurement results show that owing to this high-linearity RF front-end, the receiver achieves −6 dBm IIP3 and better than +60 dBm IIP2 for all modes and bands. (semiconductor integrated circuits)

Capacitance of circular patch resonator

International Nuclear Information System (INIS)

Miano, G.; Verolino, L.; Naples Univ.; Panariello, G.; Vaccaro, V.G.; Naples Univ.

1995-11-01

In this paper the capacitance of the circular microstrip patch resonator is computed. It is shown that the electrostatic problem can be formulated as a system of dual integral equations, and the most interesting techniques of solutions of these systems are reviewed. Some useful approximated formulas for the capacitance are derived and plots of the capacitance are finally given in a wide range of dielectric constants

MEMS Solar Generators

OpenAIRE

Grbovic, Dragoslav; Osswald, Sebastian

2011-01-01

Approved for public release; distribution is unlimited Using MEMS bimaterial structures to build highly efficient solar energy generators. This is a novel approach that utilizes developments in the area of bimaterial sensors and applies them in the field of solar energy harvesting.

Simulation study of wave phenomena from the sheath region in single frequency capacitively coupled plasma discharges; field reversals and ion reflection

Energy Technology Data Exchange (ETDEWEB)

Sharma, S.; Turner, M. M. [National Centre for Plasma Science and Technology, School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2013-07-15

Capacitively coupled radio-frequency (RF) discharges have great significance for industrial applications. Collisionless electron heating in such discharges is important, and sometimes is the dominant mechanism. This heating is usually understood to originate in a stochastic interaction between electrons and the electric fields. However, other mechanisms may also be important. There is evidence of wave emission with a frequency near the electron plasma frequency, i.e., ω{sub pe}, from the sheath region in collisionless capacitive RF discharges. This is the result of a progressive breakdown of quasi-neutrality close to the electron sheath edge. These waves are damped in a few centimeters during their propagation from the sheath towards the bulk plasma. The damping occurs because of the Landau damping or some related mechanism. This research work reports that the emission of waves is associated with a field reversal during the expanding phase of the sheath. Trapping of electrons near to this field reversal region is observed. The amplitude of the wave increases with increasing RF current density amplitude J(tilde sign){sub 0} until some maximum is reached, beyond which the wave diminishes and a new regime appears. In this new regime, the density of the bulk plasma suddenly increases because of ion reflection, which occurs due to the presence of strong field reversal near sheath region. Our calculation shows that these waves are electron plasma waves. These phenomena occur under extreme conditions (i.e., higher J(tilde sign){sub 0} than in typical experiments) for sinusoidal current waveforms, but similar effects may occur with non-sinusoidal pulsed waveforms for conditions of experimental interest, because the rate of change of current is a relevant parameter. The effect of electron elastic collisions on plasma waves is also investigated.

MEMS for Tunable Photonic Metamaterial Applications

Science.gov (United States)

Stark, Thomas

Photonic metamaterials are materials whose optical properties are derived from artificially-structured sub-wavelength unit cells, rather than from the bulk properties of the constituent materials. Examples of metamaterials include plasmonic materials, negative index materials, and electromagnetic cloaks. While advances in simulation tools and nanofabrication methods have allowed this field to grow over the past several decades, many challenges still exist. This thesis addresses two of these challenges: fabrication of photonic metamaterials with tunable responses and high-throughput nanofabrication methods for these materials. The design, fabrication, and optical characterization of a microelectromechanical systems (MEMS) tunable plasmonic spectrometer are presented. An array of holes in a gold film, with plasmon resonance in the mid-infrared, is suspended above a gold reflector, forming a Fabry-Perot interferometer of tunable length. The spectra exhibit the convolution of extraordinary optical transmission through the holes and Fabry-Perot resonances. Using MEMS, the interferometer length is modulated from 1.7 mum to 21.67 mum , thereby tuning the free spectral range from about 2900 wavenumbers to 230.7 wavenumbers and shifting the reflection minima and maxima across the infrared. Due to its broad spectral tunability in the fingerprint region of the mid-infrared, this device shows promise as a tunable biological sensing device. To address the issue of high-throughput, high-resolution fabrication of optical metamaterials, atomic calligraphy, a MEMS-based dynamic stencil lithography technique for resist-free fabrication of photonic metamaterials on unconventional substrates, has been developed. The MEMS consists of a moveable stencil, which can be actuated with nanometer precision using electrostatic comb drive actuators. A fabrication method and flip chip method have been developed, enabling evaporation of metals through the device handle for fabrication on an

Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

DEFF Research Database (Denmark)

Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

2009-01-01

This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

Optical MEMS for earth observation payloads

Science.gov (United States)

Rodrigues, B.; Lobb, D. R.; Freire, M.

2017-11-01

An ESA study has been taken by Lusospace Ltd and Surrey Satellite Techonoly Ltd (SSTL) into the use of optical Micro Eletro-Mechanical Systems (MEMS) for earth Observation. A review and analysis was undertaken of the Micro-Optical Electro-Mechanical Systems (MOEMS) available in the market with potential application in systems for Earth Observation. A summary of this review will be presented. Following the review two space-instrument design concepts were selected for more detailed analysis. The first was the use of a MEMS device to remove cloud from Earth images. The concept is potentially of interest for any mission using imaging spectrometers. A spectrometer concept was selected and detailed design aspects and benefits evaluated. The second concept developed uses MEMS devices to control the width of entrance slits of spectrometers, to provide variable spectral resolution. This paper will present a summary of the results of the study.

MEMS applications in space exploration

Science.gov (United States)

Tang, William C.

1997-09-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. MEMS is one of the key enabling technology to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Sadhana | Indian Academy of Sciences

Indian Academy of Sciences (India)

An X band RF MEMS switch based on silicon-on-glass architecture · M S Giridhar Ashwini Jambhalikar J John R Islam C L ... Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch · M S Giridhar Ashwini Jambhalikar Jiju John R Islam Ananda ...

Capacitive Biosensors and Molecularly Imprinted Electrodes.

Science.gov (United States)

Ertürk, Gizem; Mattiasson, Bo

2017-02-17

Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

PolyMEMS Actuator: A Polymer-Based Microelectromechanical (MEMS) Actuator with Macroscopic Action

Science.gov (United States)

2002-09-01

DIRECTOR: MICHAEL L. TALBERT, Maj., USAF Technical Advisor , Information Technology Division Information Directorate...technologies meet even two of the four requirements, whereas PolyMEMS meets all four. Robo -Lobster Courtesy of Dr. Joseph Ayers, Northeastern

MEMS: A new approach to micro-optics

Energy Technology Data Exchange (ETDEWEB)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlights polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.

Microtechnology management considering test and cost aspects for stacked 3D ICs with MEMS

Science.gov (United States)

Hahn, K.; Wahl, M.; Busch, R.; Grünewald, A.; Brück, R.

2018-01-01

Innovative automotive systems require complex semiconductor devices currently only available in consumer grade quality. The European project TRACE will develop and demonstrate methods, processes, and tools to facilitate usage of Consumer Electronics (CE) components to be deployable more rapidly in the life-critical automotive domain. Consumer electronics increasingly use heterogeneous system integration methods and "More than Moore" technologies, which are capable to combine different circuit domains (Analog, Digital, RF, MEMS) and which are integrated within SiP or 3D stacks. Making these technologies or at least some of the process steps available under automotive electronics requirements is an important goal to keep pace with the growing demand for information processing within cars. The approach presented in this paper aims at a technology management and recommendation system that covers technology data, functional and non-functional constraints, and application scenarios, and that will comprehend test planning and cost consideration capabilities.

Nano-tribology and materials in MEMS

CERN Document Server

Satyanarayana, N; Lim, Seh

2013-01-01

This book brings together recent developments in the areas of MEMS tribology, novel lubricants and coatings for nanotechnological applications, biomimetics in tribology and fundamentals of micro/nano-tribology. Tribology plays important roles in the functioning and durability of machines at small length scales because of the problems associated with strong surface adhesion, friction, wear etc. Recently, a number of studies have been conducted to understand tribological phenomena at nano/micro scales and many new tribological solutions for MEMS have been proposed.

Review of Automated Design and Optimization of MEMS

DEFF Research Database (Denmark)

Achiche, Sofiane; Fan, Zhun; Bolognini, Francesca

2007-01-01

carried out. This paper presents a review of these techniques. The design task of MEMS is usually divided into four main stages: System Level, Device Level, Physical Level and the Process Level. The state of the art o automated MEMS design in each of these levels is investigated....

Nanoscale capacitance: A quantum tight-binding model

Science.gov (United States)

Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

2017-01-01

Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors.

Science.gov (United States)

Zhang, Yao; Ma, Rui; Zhen, Xue V; Kudva, Yogish C; Bühlmann, Philippe; Koester, Steven J

2017-11-08

A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

Design and Calibration of an RF Actuator for Low-Level RF Systems

Science.gov (United States)

Geng, Zheqiao; Hong, Bo

2016-02-01

X-ray free electron laser (FEL) machines like the Linac Coherent Light Source (LCLS) at SLAC require high-quality electron beams to generate X-ray lasers for various experiments. Digital low-level RF (LLRF) systems are widely used to control the high-power RF klystrons to provide a highly stable RF field in accelerator structures for beam acceleration. Feedback and feedforward controllers are implemented in LLRF systems to stabilize or adjust the phase and amplitude of the RF field. To achieve the RF stability and the accuracy of the phase and amplitude adjustment, low-noise and highly linear RF actuators are required. Aiming for the upgrade of the S-band Linac at SLAC, an RF actuator is designed with an I/Qmodulator driven by two digital-to-analog converters (DAC) for the digital LLRF systems. A direct upconversion scheme is selected for RF actuation, and an on-line calibration algorithm is developed to compensate the RF reference leakage and the imbalance errors in the I/Q modulator, which may cause significant phase and amplitude actuation errors. This paper presents the requirements on the RF actuator, the design of the hardware, the calibration algorithm, and the implementation in firmware and software and the test results at LCLS.

MEMS Micro-Valve for Space Applications

Science.gov (United States)

Chakraborty, I.; Tang, W. C.; Bame, D. P.; Tang, T. K.

1998-01-01

We report on the development of a Micro-ElectroMechanical Systems (MEMS) valve that is designed to meet the rigorous performance requirements for a variety of space applications, such as micropropulsion, in-situ chemical analysis of other planets, or micro-fluidics experiments in micro-gravity. These systems often require very small yet reliable silicon valves with extremely low leak rates and long shelf lives. Also, they must survive the perils of space travel, which include unstoppable radiation, monumental shock and vibration forces, as well as extreme variations in temperature. Currently, no commercial MEMS valve meets these requirements. We at JPL are developing a piezoelectric MEMS valve that attempts to address the unique problem of space. We begin with proven configurations that may seem familiar. However, we have implemented some major design innovations that should produce a superior valve. The JPL micro-valve is expected to have an extremely low leak rate, limited susceptibility to particulates, vibration or radiation, as well as a wide operational temperature range.

Radioisotope Power Sources for MEMS Devices,

International Nuclear Information System (INIS)

Blanchard, J.P.

2001-01-01

Microelectromechanical systems (MEMS) comprise a rapidly expanding research field with potential applications varying from sensors in airbags to more recent optical applications. Depending on the application, these devices often require an on-board power source for remote operation, especially in cases requiring operation for an extended period of time. Previously suggested power sources include fossil fuels and solar energy, but nuclear power sources may provide significant advantages for certain applications. Hence, the objective of this study is to establish the viability of using radioisotopes to power realistic MEMS devices. A junction-type battery was constructed using silicon and a 63 Ni liquid source. A source volume containing 64 microCi provided a power of ∼0.07 nW. A more novel application of nuclear sources for MEMS applications involves the creation of a resonator that is driven by charge collection in a cantilever beam. Preliminary results have established the feasibility of this concept, and future work will optimize the design for various applications

Mathematical analysis of partial differential equations modeling electrostatic MEMS

CERN Document Server

Esposito, Pierpaolo; Guo, Yujin

2010-01-01

Micro- and nanoelectromechanical systems (MEMS and NEMS), which combine electronics with miniature-size mechanical devices, are essential components of modern technology. It is the mathematical model describing "electrostatically actuated" MEMS that is addressed in this monograph. Even the simplified models that the authors deal with still lead to very interesting second- and fourth-order nonlinear elliptic equations (in the stationary case) and to nonlinear parabolic equations (in the dynamic case). While nonlinear eigenvalue problems-where the stationary MEMS models fit-are a well-developed

Additive direct-write microfabrication for MEMS: A review

Science.gov (United States)

Teh, Kwok Siong

2017-12-01

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer- generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the maker movement. The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into threedimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive

“Virtual IED sensor” at an rf-biased electrode in low-pressure plasma

Energy Technology Data Exchange (ETDEWEB)

Bogdanova, M. A.; Zyryanov, S. M. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, SINP MSU, Moscow (Russian Federation); Faculty of Physics, Moscow State University, MSU, Moscow (Russian Federation); Lopaev, D. V.; Rakhimov, A. T. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, SINP MSU, Moscow (Russian Federation)

2016-07-15

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtual IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low

Ball driven type MEMS SAD for artillery fuse

International Nuclear Information System (INIS)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition. (paper)

Ball driven type MEMS SAD for artillery fuse

Science.gov (United States)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S.; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition.

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

As a field, Microelectromechanical Systems (MEMS) has matured over the last two decades to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of ...

Enabling technology for MEMS and nanodevices

CERN Document Server

Baltes, Henry; Fedder, Gary K; Hierold, Christofer; Korvink, Jan G; Tabata, Osamu

2013-01-01

This softcover edition of the eponymous volume from the successful ""Advanced Micro & Nanosystems"" series covers all aspects of fabrication of MEMS under CMOS-compatible conditions from design to implementation.It examines the various routes and methods to combine electronics generated by the CMOS technology with novel micromechanical parts into one-chip solutions. Various approaches, fundamental and technological aspects as well as strategies leading to different types of functionalities and presented in detail.For the practicing engineer as well as MSc and PhD students on MEMS cours

From MEMS to nanomachine

International Nuclear Information System (INIS)

Esashi, Masayoshi; Ono, Takahito

2005-01-01

Practically applicable microelectromechanical systems (MEMS) and nanomachines have been developed by applying dry processes. Deep reactive ion etching (RIE) of silicon and its applications to an electrostatically levitated rotational gyroscope, a fibre optic blood pressure sensor and in micro-actuated probes are described. High density electrical feedthrough in glass is made using deep RIE of glass and electroplating of metal. Multi-probe data storage system has been developed using the high density electrical feedthrough in glass. Chemical vapour deposition (CVD) of different materials have been developed for MEMS applications; trench-refill using SiO 2 CVD, microstructures using Silicon carbide CVD for glass mold press and selective CVD of carbon nanotube for electron field emitter. Multi-column electron beam lithography system has been developed using the electron field emitter. (topical review)

A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations.

Science.gov (United States)

Tsai, Tsung-Heng; Tsai, Hao-Cheng; Wu, Tien-Keng

2014-10-01

This paper presents a capacitive tactile sensor fabricated in a standard CMOS process. Both of the sensor and readout circuits are integrated on a single chip by a TSMC 0.35 μm CMOS MEMS technology. In order to improve the sensitivity, a T-shaped protrusion is proposed and implemented. This sensor comprises the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few post-processing steps. By a nano-indenter, the measured spring constant of the T-shaped structure is 2.19 kNewton/m. Fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction are utilized to compensate process variations and improve the accuracy of the readout circuits. The measured displacement-to-voltage transductance is 7.15 mV/nm, and the sensitivity is 3.26 mV/μNewton. The overall power dissipation is 132.8 μW.

Microwave frequency detector at X-band using GaAs MMIC technology

International Nuclear Information System (INIS)

Zhang Jun; Liao Xiaoping; Jiao Yongchang

2009-01-01

The design, fabrication, and experimental results of an MEMS microwave frequency detector are presented for the first time. The structure consists of a microwave power divider, two CPW transmission lines, a microwave power combiner, an MEMS capacitive power sensor and a thermopile. The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully. The MEMS capacitive power sensor is used for detecting the high power signal, while the thermopile is used for detecting the low power signal. Signals of 17 and 10 dBm are measured over the X-band. The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor, and 6.67 MHz/μV under 10 dBm by the thermopile, respectively. The validity of the presented design has been confirmed by the experiment.

Development of the micro pixel chamber based on MEMS technology

Science.gov (United States)

Takemura, T.; Takada, A.; Kishimoto, T.; Komura, S.; Kubo, H.; Matsuoka, Y.; Miuchi, K.; Miyamoto, S.; Mizumoto, T.; Mizumura, Y.; Motomura, T.; Nakamasu, Y.; Nakamura, K.; Oda, M.; Ohta, K.; Parker, J. D.; Sawano, T.; Sonoda, S.; Tanimori, T.; Tomono, D.; Yoshikawa, K.

2018-02-01

Micro pixel chambers (μ-PIC) are gaseous two-dimensional imaging detectors originally manufactured using printed circuit board (PCB) technology. They are used in MeV gamma-ray astronomy, medicalimaging, neutron imaging, the search for dark matter, and dose monitoring. The position resolution of the present μ-PIC is approximately 120 μm (RMS), however some applications require a fine position resolution of less than 100 μm. To this end, we have started to develop a μ-PIC based on micro electro mechanical system (MEMS) technology, which provides better manufacturing accuracy than PCB technology. Our simulation predicted the gains of MEMS μ-PICs to be twice those of PCB μ-PICs at the same anode voltage. We manufactured two MEMS μ-PICs and tested them to study their behavior. In these experiments, we successfully operated the fabricatedMEMS μ-PICs and we achieved a maximum gain of approximately 7×103 and collected their energy spectra under irradiation of X-rays from 55Fe. However, the measured gains of the MEMS μ-PICs were less than half of the values predicted in the simulations. We postulated that the gains of the MEMS μ-PICs are diminished by the effect of the silicon used as a semiconducting substrate.

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of a MEMS device or structure using conven- tional CMOS processes or their variants was the ...

RF transport

International Nuclear Information System (INIS)

Choroba, Stefan

2013-01-01

This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

Integrated Electromechanical Transduction Schemes for Polymer MEMS Sensors

Directory of Open Access Journals (Sweden)

Damien Thuau

2018-04-01

Full Text Available Polymer Micro ElectroMechanical Systems (MEMS have the potential to constitute a powerful alternative to silicon-based MEMS devices for sensing applications. Although the use of commercial photoresists as structural material in polymer MEMS has been widely reported, the integration of functional polymer materials as electromechanical transducers has not yet received the same amount of interest. In this context, we report on the design and fabrication of different electromechanical schemes based on polymeric materials ensuring different transduction functions. Piezoresistive transduction made of carbon nanotube-based nanocomposites with a gauge factor of 200 was embedded within U-shaped polymeric cantilevers operating either in static or dynamic modes. Flexible resonators with integrated piezoelectric transduction were also realized and used as efficient viscosity sensors. Finally, piezoelectric-based organic field effect transistor (OFET electromechanical transduction exhibiting a record sensitivity of over 600 was integrated into polymer cantilevers and used as highly sensitive strain and humidity sensors. Such advances in integrated electromechanical transduction schemes should favor the development of novel all-polymer MEMS devices for flexible and wearable applications in the future.

Carbon flow electrodes for continuous operation of capacitive deionization and capacitive mixing energy generation

NARCIS (Netherlands)

Porada, S.; Hamelers, H.V.M.; Bryjak, M.; Presser, V.; Biesheuvel, P.M.; Weingarth, D.

2014-01-01

Capacitive technologies, such as capacitive deionization and energy harvesting based on mixing energy (“capmix” and “CO2 energy”), are characterized by intermittent operation: phases of ion electrosorption from the water are followed by system regeneration. From a system application point of view,

Antenna Miniaturization with MEMS Tunable Capacitors

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

2014-01-01

In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

Sputtered highly oriented PZT thin films for MEMS applications

Science.gov (United States)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

Nondestructive surface profiling of hidden MEMS using an infrared low-coherence interferometric microscope

Science.gov (United States)

Krauter, Johann; Osten, Wolfgang

2018-03-01

There are a wide range of applications for micro-electro-mechanical systems (MEMS). The automotive and consumer market is the strongest driver for the growing MEMS industry. A 100 % test of MEMS is particularly necessary since these are often used for safety-related purposes such as the ESP (Electronic Stability Program) system. The production of MEMS is a fully automated process that generates 90 % of the costs during the packaging and dicing steps. Nowadays, an electrical test is carried out on each individual MEMS component before these steps. However, after encapsulation, MEMS are opaque to visible light and other defects cannot be detected. Therefore, we apply an infrared low-coherence interferometer for the topography measurement of those hidden structures. A lock-in algorithm-based method is shown to calculate the object height and to reduce ghost steps due to the 2π -unambiguity. Finally, measurements of different MEMS-based sensors are presented.

Ultra-compact MEMS FTIR spectrometer

Science.gov (United States)

Sabry, Yasser M.; Hassan, Khaled; Anwar, Momen; Alharon, Mohamed H.; Medhat, Mostafa; Adib, George A.; Dumont, Rich; Saadany, Bassam; Khalil, Diaa

2017-05-01

Portable and handheld spectrometers are being developed and commercialized in the late few years leveraging the rapidly-progressing technology and triggering new markets in the field of on-site spectroscopic analysis. Although handheld devices were commercialized for the near-infrared spectroscopy (NIRS), their size and cost stand as an obstacle against the deployment of the spectrometer as spectral sensing components needed for the smart phone industry and the IoT applications. In this work we report a chip-sized microelectromechanical system (MEMS)-based FTIR spectrometer. The core optical engine of the solution is built using a passive-alignment integration technique for a selfaligned MEMS chip; self-aligned microoptics and a single detector in a tiny package sized about 1 cm3. The MEMS chip is a monolithic, high-throughput scanning Michelson interferometer fabricated using deep reactive ion etching technology of silicon-on-insulator substrate. The micro-optical part is used for conditioning the input/output light to/from the MEMS and for further light direction to the detector. Thanks to the all-reflective design of the conditioning microoptics, the performance is free of chromatic aberration. Complemented by the excellent transmission properties of the silicon in the infrared region, the integrated solution allows very wide spectral range of operation. The reported sensor's spectral resolution is about 33 cm-1 and working in the range of 1270 nm to 2700 nm; upper limited by the extended InGaAs detector. The presented solution provides a low cost, low power, tiny size, wide wavelength range NIR spectral sensor that can be manufactured with extremely high volumes. All these features promise the compatibility of this technology with the forthcoming demand of smart portable and IoT devices.

Políticas Públicas de Memória O Programa Pontos de Memória no Contexto Sul-Rio-Grandense

Directory of Open Access Journals (Sweden)

Mariana Boujadi Mariano da Silva

2016-12-01

Full Text Available O presente estudo busca realizar uma análise do Programa Pontos de Memória, do Instituto Brasileiro de Museus. Analisando o Programa, observa-se a iniciativa de preservar a memória de determinados grupos sociais considerados excluídos da representação de museus ditos tradicionais, através da implementação de espaços de memória ou ações sociomuseológicas, que narrem suas histórias a partir do suporte de patrimônios locais. A análise parte de questionamentos iniciais: quais são as memórias e as identidades que o Programa seleciona para narrar, através de quais ferramentas ocorre a divulgação e sobretudo a apropriação deste patrimônio por parte da comunidade? Para analisar as causas e os efeitos desta política pública, o trabalho observará e discutirá o alcance e a influência que esses espaços exercem nas comunidades, as ações desenvolvidas e a longevidade desses espaços ou ações no contexto sul-rio-grandense.

Improved capacitance sensor with variable operating frequency for scanning capacitance microscopy

International Nuclear Information System (INIS)

Kwon, Joonhyung; Kim, Joonhui; Jeong, Jong-Hwa; Lee, Euy-Kyu; Seok Kim, Yong; Kang, Chi Jung; Park, Sang-il

2005-01-01

Scanning capacitance microscopy (SCM) has been gaining attention for its capability to measure local electrical properties in doping profile, oxide thickness, trapped charges and charge dynamics. In many cases, stray capacitance produced by different samples and measurement conditions affects the resonance frequency of a capacitance sensor. The applications of conventional SCM are critically limited by the fixed operating frequency and lack of tunability in its SCM sensor. In order to widen SCM application to various samples, we have developed a novel SCM sensor with variable operating frequency. By performing variable frequency sweep over the band of 160 MHz, the SCM sensor is tuned to select the best and optimized resonance frequency and quality factor for each sample measurement. The fundamental advantage of the new variable frequency SCM sensor was demonstrated in the SCM imaging of silicon oxide nano-crystals. Typical sensitivity of the variable frequency SCM sensor was found to be 10 -19 F/V

Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

International Nuclear Information System (INIS)

Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao

2017-01-01

We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

Energy Technology Data Exchange (ETDEWEB)

Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao, E-mail: dxiang@sjtu.edu.cn

2017-03-21

We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

A Review on Key Issues and Challenges in Devices Level MEMS Testing

Directory of Open Access Journals (Sweden)

Muhammad Shoaib

2016-01-01

Full Text Available The present review provides information relevant to issues and challenges in MEMS testing techniques that are implemented to analyze the microelectromechanical systems (MEMS behavior for specific application and operating conditions. MEMS devices are more complex and extremely diverse due to the immersion of multidomains. Their failure modes are distinctive under different circumstances. Therefore, testing of these systems at device level as well as at mass production level, that is, parallel testing, is becoming very challenging as compared to the IC test, because MEMS respond to electrical, physical, chemical, and optical stimuli. Currently, test systems developed for MEMS devices have to be customized due to their nondeterministic behavior and complexity. The accurate measurement of test systems for MEMS is difficult to quantify in the production phase. The complexity of the device to be tested required maturity in the test technique which increases the cost of test development; this practice is directly imposed on the device cost. This factor causes a delay in time-to-market.

Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications

Science.gov (United States)

Kumar, Ajay; Tripathi, M. M.; Chaujar, Rishu

2018-04-01

In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm technology node (Gate length = 20 nm). The integration of black phosphorus with junctionless recessed channel MOSFET, leads to higher drain current of about 0.3 mA and excellent switching ratio (of the order of 1011) due to reduced off-current which leads to improvement in sub-threshold slope (SS) (67mV/dec). Further, RF performance metrics have also been studied with an aim to analyze high-frequency performance. The following FOMs have been evaluated: cut-off frequency (fT), maximum oscillator frequency (fMAX), stern stability factor, various power gains and parasitic capacitances at THz frequency range. Thus, in addition to the high packing density offered by RC MOSFET, the proposed design finds numerous application at THz frequency making it a promising candidate at wafer scale integration level.

Rf power sources

International Nuclear Information System (INIS)

Allen, M.A.

1988-01-01

In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

A low-noise MEMS accelerometer for unattended ground sensor applications

Science.gov (United States)

Speller, Kevin E.; Yu, Duli

2004-09-01

A low-noise micro-machined servo accelerometer has been developed for use in Unattended Ground Sensors (UGS). Compared to conventional coil-and-magnet based velocity transducers, this Micro-Electro-Mechanical System (MEMS) accelerometer offers several key benefits for battlefield monitoring. Many UGS require a compass to determine deployment orientation with respect to magnetic North. This orientation information is critical for determining the bearing of incoming signals. Conventional sensors with sensing technology based on a permanent magnet can cause interference with a compass when used in close proximity. This problem is solved with a MEMS accelerometer which does not require any magnetic materials. Frequency information below 10 Hz is valuable for identification of signal sources. Conventional seismometers used in UGS are typically limited in frequency response from 20 to 200 Hz. The MEMS accelerometer has a flat frequency response from DC to 5 kHz. The wider spectrum of signals received improves detection, classification and monitoring on the battlefield. The DC-coupled output of the MEMS accelerometer also has the added benefit of providing tilt orientation data for the deployed UGS. Other performance parameters of the MEMS accelerometer that are important to UGS such as size, weight, shock survivability, phase response, distortion, and cross-axis rejection will be discussed. Additionally, field test data from human footsteps recorded with the MEMS accelerometer will be presented.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

Science.gov (United States)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

Thin Film Transistor Control Circuitry for MEMS Acoustic Transducers

Science.gov (United States)

Daugherty, Robin

This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10-100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.

Thermal Desalination using MEMS and Salinity-Gradient Solar Pond Technology

Science.gov (United States)

Lu, H.; Walton, J. C.; Hein, H.

2002-08-01

MEMS (multi-effect, multi-stage) flash desalination (distillation) driven by thermal energy derived from a salinity-gradient solar pond is investigated in this study for the purpose of improving the thermodynamic efficiency and economics of this technology. Three major tasks are performed: (1) a MEMS unit is tested under various operating conditions at the El Paso Solar Pond site; (2) the operation and maintenance procedures of the salinity-gradient solar pond coupled with the MEMS operation is studied; and (3) previous test data on a 24-stage, falling-film flash distillation unit (known as the Spinflash) is analyzed and compared with the performance of the MEMS unit. The data and information obtained from this investigation is applicable to a variety of thermal desalination processes using other solar options and/or waste heat.

MEMS Actuators for Improved Performance and Durability

Science.gov (United States)

Yearsley, James M.

Micro-ElectroMechanical Systems (MEMS) devices take advantage of force-scaling at length scales smaller than a millimeter to sense and interact with directly with phenomena and targets at the microscale. MEMS sensors found in everyday devices like cell-phones and cars include accelerometers, gyros, pressure sensors, and magnetic sensors. MEMS actuators generally serve more application specific roles including micro- and nano-tweezers used for single cell manipulation, optical switching and alignment components, and micro combustion engines for high energy density power generation. MEMS rotary motors are actuators that translate an electric drive signal into rotational motion and can serve as rate calibration inputs for gyros, stages for optical components, mixing devices for micro-fluidics, etc. Existing rotary micromotors suffer from friction and wear issues that affect lifetime and performance. Attempts to alleviate friction effects include surface treatment, magnetic and electrostatic levitation, pressurized gas bearings, and micro-ball bearings. The present work demonstrates a droplet based liquid bearing supporting a rotary micromotor that improves the operating characteristics of MEMS rotary motors. The liquid bearing provides wear-free, low-friction, passive alignment between the rotor and stator. Droplets are positioned relative to the rotor and stator through patterned superhydrophobic and hydrophilic surface coatings. The liquid bearing consists of a central droplet that acts as the motor shaft, providing axial alignment between rotor and stator, and satellite droplets, analogous to ball-bearings, that provide tip and tilt stable operation. The liquid bearing friction performance is characterized through measurement of the rotational drag coefficient and minimum starting torque due to stiction and geometric effects. Bearing operational performance is further characterized by modeling and measuring stiffness, environmental survivability, and high

RF Measurement Concepts

CERN Document Server

Caspers, F

2014-01-01

For the characterization of components, systems and signals in the radiofrequency (RF) and microwave ranges, several dedicated instruments are in use. In this article the fundamentals of the RF signal techniques are discussed. The key element in these front ends is the Schottky diode which can be used either as a RF mixer or as a single sampler. The spectrum analyser has become an absolutely indispensable tool for RF signal analysis. Here the front end is the RF mixer as the RF section of modern spectrum analyses has a ra ther complex architecture. The reasons for this complexity and certain working principles as well as limitations are discussed. In addition, an overview of the development of scalar and vector signal analysers is given. For the determination of the noise temperature of a one-port and the noise figure of a two-port, basic concepts and relations are shown as well as a brief discussion of commonly used noise-measurement techniques. In a further part of this article the operating principles of n...

Microscopic investigation of RF surfaces of 3 GHz niobium accelerator cavities following RF processing

International Nuclear Information System (INIS)

Graber, J.; Barnes, P.; Flynn, T.; Kirchgessner, J.; Knobloch, J.; Moffat, D.; Muller, H.; Padamsee, H.; Sears, J.

1993-01-01

RF processing of Superconducting accelerating cavities is achieved through a change in the electron field emission (FE) characteristics of the RF surface. The authors have examined the RF surfaces of several single-cell 3 GHz cavities, following RF processing, in a Scanning Electron Microscope (SEM). The RF processing sessions included both High Peak Power (P ≤ 50 kW) pulsed processing, and low power (≤ 20 W) continuous wave processing. The experimental apparatus also included a thermometer array on the cavity outer wall, allowing temperature maps to characterize the emission before and after RF processing gains. Multiple sites have been located in cavities which showed improvements in cavity behavior due to RF processing. Several SEM-located sites can be correlated with changes in thermometer signals, indicating a direct relationship between the surface site and emission reduction due to RF processing. Information gained from the SEM investigations and thermometry are used to enhance the theoretical model of RF processing

Melancolia, memória e subjetividade

OpenAIRE

Giele Rocha Dorneles

2015-01-01

A proposta desta tese é estabelecer, através de uma perspectiva comparatista, relações entre três temas articuladores: a melancolia, a memória e a subjetividade, de modo a constituir entrelaçamentos possíveis, além de buscar indicar o modo como essas três temáticas são apresentadas e representadas em diferentes formas de expressão das artes, partindo de obras literárias - como “A maior flor do mundo” e “As pequenas memórias”, entre outras de José Saramago, e de autores como Charles Baudelaire...

Fabrication and performance analysis of MEMS-based Variable Emissivity Radiator for Space Applications

International Nuclear Information System (INIS)

Lee, Changwook; Oh, Hyung-Ung; Kim, Taegyu

2014-01-01

All Louver was typically representative as the thermal control device. The louver was not suitable to be applied to small satellite, because it has the disadvantage of increase in weight and volume. So MEMS-based variable radiator was developed to support the disadvantage of the louver MEMS-based variable emissivity radiator was designed for satellite thermal control. Because of its immediate response and low power consumption. Also MEMS- based variable emissivity radiator has been made smaller by using MEMS process, it could be solved the problem of the increase in weight and volume, and it has a high reliability and immediate response by using electrical control. In this study, operation validation of the MEMS radiator had been carried out, resulting that emissivity could be controlled. Numerical model was also designed to predict the thermal control performance of MEMS-based variable emissivity radiator

A novel prototyping method for die-level monolithic integration of MEMS above-IC

International Nuclear Information System (INIS)

Cicek, Paul-Vahe; Zhang, Qing; Saha, Tanmoy; Mahdavi, Sareh; Allidina, Karim; Gamal, Mourad El; Nabki, Frederic

2013-01-01

This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration. (paper)

The Sandia MEMS passive shock sensor : FY07 maturation activities.

Energy Technology Data Exchange (ETDEWEB)

Houston, Jack E.; Blecke, Jill; Mitchell, John Anthony; Wittwer, Jonathan W.; Crowson, Douglas A.; Clemens, Rebecca C.; Walraven, Jeremy Allen; Epp, David S.; Baker, Michael Sean

2008-08-01

This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.

NSF/AFOSR/ASME Workshop on Tribology Issues and Opportunities in MEMS

CERN Document Server

1998-01-01

Micro Electro Mechanical Systems (MEMS) is already about a billion dollars a year industry and is growing rapidly. So far major emphasis has been placed on the fabrication processes for various devices. There are serious issues related to tribology, mechanics, surfacechemistry and materials science in the operationand manufacturingof many MEMS devices and these issues are preventing an even faster commercialization. Very little is understood about tribology and mechanical properties on micro- to nanoscales of the materials used in the construction of MEMS devices. The MEMS community needs to be exposed to the state-of-the-artoftribology and vice versa. Fundamental understanding of friction/stiction, wear and the role of surface contamination and environmental debris in micro devices is required. There are significantadhesion, friction and wear issues in manufacturing and actual use, facing the MEMS industry. Very little is understood about the tribology of bulk silicon and polysilicon films used in the constr...

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Science.gov (United States)

Anand, Sunny; Sarin, R. K.

2017-02-01

In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET (HD_DMG_DLTFET). It is compared with conventional doping-less TFET (DLTFET) and dual material gate doping-less TFET (DMG_DLTFET) on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current ({I}\\text{ON}=94 μ \\text{A}/μ \\text{m}), {I}\\text{ON}/{I}\\text{OFF}(≈ 1.36× {10}13), \\text{point} (≈ 3\\text{mV}/\\text{dec}) and average subthreshold slope (\\text{AV}-\\text{SS}=40.40 \\text{mV}/\\text{dec}). The proposed device offers low total gate capacitance (C gg) along with higher drive current. However, with a better transconductance (g m) and cut-off frequency (f T), the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage (V EA) and output conductance (g d) are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices. From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.

Digital holography for MEMS and microsystem metrology

CERN Document Server

Asundi, Anand

2011-01-01

Approaching the topic of digital holography from the practical perspective of industrial inspection, Digital Holography for MEMS and Microsystem Metrology describes the process of digital holography and its growing applications for MEMS characterization, residual stress measurement, design and evaluation, and device testing and inspection. Asundi also provides a thorough theoretical grounding that enables the reader to understand basic concepts and thus identify areas where this technique can be adopted. This combination of both practical and theoretical approach will ensure the

Oxidative stress detection by MEMS cantilever sensor array based electronic nose

Science.gov (United States)

Gupta, Anurag; Singh, T. Sonamani; Singh, Priyanka; Yadava, R. D. S.

2018-05-01

This paper is concerned with analyzing the role of polymer swelling induced surface stress in MEMS chemical sensors. The objective is to determine the impact of surface stress on the chemical discrimination ability of MEMS resonator sensors. We considered a case study of hypoxia detection by MEMS sensor array and performed several types of simulation experiments for detection of oxidative stress volatile organic markers in human breath. Both types of sensor response models that account for the surface stress effect and that did not were considered for the analyses in comparison. It is found that the surface stress (hence the polymer swelling) provides better chemical discrimination ability to polymer coated MEMS sensors.

Development of Testing Methodologies for the Mechanical Properties of MEMS

Science.gov (United States)

Ekwaro-Osire, Stephen

2003-01-01

This effort is to investigate and design testing strategies to determine the mechanical properties of MicroElectroMechanical Systems (MEMS) as well as investigate the development of a MEMS Probabilistic Design Methodology (PDM). One item of potential interest is the design of a test for the Weibull size effect in pressure membranes. The Weibull size effect is a consequence of a stochastic strength response predicted from the Weibull distribution. Confirming that MEMS strength is controlled by the Weibull distribution will enable the development of a probabilistic design methodology for MEMS - similar to the GRC developed CARES/Life program for bulk ceramics. However, the primary area of investigation will most likely be analysis and modeling of material interfaces for strength as well as developing a strategy to handle stress singularities at sharp corners, filets, and material interfaces. This will be a continuation of the previous years work. The ultimate objective of this effort is to further develop and verify the ability of the Ceramics Analysis and Reliability Evaluation of Structures Life (CARES/Life) code to predict the time-dependent reliability of MEMS structures subjected to multiple transient loads.

Research and Analysis of MEMS Switches in Different Frequency Bands

Directory of Open Access Journals (Sweden)

Wenchao Tian

2018-04-01

Full Text Available Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1 utilizing combinations of several switches in series; (2 covering a float metal layer on the dielectric layer; (3 using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4 developing MEMS switches using T-match and π-match; (5 designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS technology and reconfigurable MEMS’ surfaces; (6 employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7 selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8 adopting gold alloying with carbon nanotubes (CNTs, hermetic and reliable packaging, and mN-level contact.

Piezoelectric Lead Zirconate Titanate (PZT) Ring Shaped Contour-Mode MEMS Resonators

Science.gov (United States)

Kasambe, P. V.; Asgaonkar, V. V.; Bangera, A. D.; Lokre, A. S.; Rathod, S. S.; Bhoir, D. V.

2018-02-01

Flexibility in setting fundamental frequency of resonator independent of its motional resistance is one of the desired criteria in micro-electromechanical (MEMS) resonator design. It is observed that ring-shaped piezoelectric contour-mode MEMS resonators satisfy this design criterion than in case of rectangular plate MEMS resonators. Also ring-shaped contour-mode piezoelectric MEMS resonator has an advantage that its fundamental frequency is defined by in-plane dimensions, but they show variation of fundamental frequency with different Platinum (Pt) thickness referred as change in ratio of fNEW /fO . This paper presents the effects of variation in geometrical parameters and change in piezoelectric material on the resonant frequencies of Platinum piezoelectric-Aluminium ring-shaped contour-mode MEMS resonators and its electrical parameters. The proposed structure with Lead Zirconate Titanate (PZT) as the piezoelectric material was observed to be a piezoelectric material with minimal change in fundamental resonant frequency due to Platinum thickness variation. This structure was also found to exhibit extremely low motional resistance of 0.03 Ω as compared to the 31-35 Ω range obtained when using AlN as the piezoelectric material. CoventorWare 10 is used for the design, simulation and corresponding analysis of resonators which is Finite Element Method (FEM) analysis and design tool for MEMS devices.

Verification of frequency scaling laws for capacitive radio-frequency discharges using two-dimensional simulations

International Nuclear Information System (INIS)

Vahedi, V.; Birdsall, C.K.; Lieberman, M.A.; DiPeso, G.; Rognlien, T.D.

1993-01-01

Weakly ionized processing plasmas are studied in two dimensions using a bounded particle-in-cell (PIC) simulation code with a Monte Carlo collision (MCC) package. The MCC package models the collisions between charged and neutral particles, which are needed to obtain a self-sustained plasma and the proper electron and ion energy loss mechanisms. A two-dimensional capacitive radio-frequency (rf) discharge is investigated in detail. Simple frequency scaling laws for predicting the behavior of some plasma parameters are derived and then compared with simulation results, finding good agreements. It is found that as the drive frequency increases, the sheath width decreases, and the bulk plasma becomes more uniform, leading to a reduction of the ion angular spread at the target and an improvement of ion dose uniformity at the driven electrode

MEMS and the microbe

NARCIS (Netherlands)

Ingham, C.J.; Vlieg, J.E.T.V.H.

2008-01-01

In recent years, relatively simple MEMS fabrications have helped accelerate our knowledge of the microbial cell. Current progress and challenges in the application of lab-on-a-chip devices to the viable microbe are reviewed. Furthermore, the degree to which microbiologists are becoming the engineers

Buffering Implications for the Design Space of Streaming MEMS Storage

NARCIS (Netherlands)

Khatib, M.G.; Abelmann, Leon; Preas, Kathy

2011-01-01

Emerging nanotechnology-based systems encounter new non-functional requirements. This work addresses MEMS storage, an emerging technology that promises ultrahigh density and energy-efficient storage devices. We study the buffering requirement of MEMS storage in streaming applications. We show that

The Capacitive Magnetic Field Sensor

Science.gov (United States)

Zyatkov, D. O.; Yurchenko, A. V.; Balashov, V. B.; Yurchenko, V. I.

2016-01-01

The results of a study of sensitive element magnetic field sensor are represented in this paper. The sensor is based on the change of the capacitance with an active dielectric (ferrofluid) due to the magnitude of magnetic field. To prepare the ferrofluid magnetic particles are used, which have a followingdispersion equal to 50 brand 5BDSR. The dependence of the sensitivity of the capacitive element from the ferrofluid with different dispersion of magnetic particles is considered. The threshold of sensitivity and sensitivity of a measuring cell with ferrofluid by a magnetic field was determined. The experimental graphs of capacitance change of the magnitude of magnetic field are presented.

Virtual electrical capacitance tomography sensor

International Nuclear Information System (INIS)

Li, Y; Yang, W Q

2005-01-01

Electrical capacitance tomography (ECT) is an effective technique for elucidating the distribution of dielectric materials inside closed pipes or vessels. This paper describes a virtual electrical capacitance tomography (VECT) system, which can simulate a range of sensor and hardware configurations and material distributions. A selection of popular image reconstruction algorithms has been made available and image error and capacitance error tools enable their performance to be evaluated and compared. Series of frame-by-frame results can be stored for simulating real-time dynamic flows. The system is programmed in Matlab with DOS functions. It is convenient to use and low-cost to operate, providing an effective tool for engineering experiment

Flexible PVDF ferroelectric capacitive temperature sensor

KAUST Repository

Khan, Naveed

2015-08-02

In this paper, a capacitive temperature sensor based on polyvinylidene fluoride (PVDF) capacitor is explored. The PVDF capacitor is characterized below its Curie temperature. The capacitance of the PVDF capacitor changes vs temperature with a sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

Radio Frequency Microelectromechanical Systems [Book Chapter Manuscript

Energy Technology Data Exchange (ETDEWEB)

Nordquist, Christopher [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Olsson, Roy H. [Defense Advanced Research Projects Agency (DARPA), Albuquerque, NM (United States)

2014-12-15

Radio frequency microelectromechanical system (RF MEMS) devices are microscale devices that achieve superior performance relative to other technologies by taking advantage of the accuracy, precision, materials, and miniaturization available through microfabrication. To do this, these devices use their mechanical and electrical properties to perform a specific RF electrical function such as switching, transmission, or filtering. RF MEMS has been a popular area of research since the early 1990s, and within the last several years, the technology has matured sufficiently for commercialization and use in commercial market systems.

Hermeticity testing of MEMS and microelectronic packages

CERN Document Server

Costello, Suzanne

2013-01-01

Packaging of microelectronics has been developing since the invention of the transistor in 1947. With the increasing complexity and decreasing size of the die, packaging requirements have continued to change. A step change in package requirements came with the introduction of the Micro-Electro-Mechanical System (MEMS) whereby interactions with the external environment are, in some cases, required.This resource is a rapid, definitive reference on hermetic packaging for the MEMS and microelectronics industry, giving practical guidance on traditional and newly developed test methods. This book in

Single-crystal-silicon-based microinstrument to study friction and wear at MEMS sidewall interfaces

International Nuclear Information System (INIS)

Ansari, N; Ashurst, W R

2012-01-01

Since the advent of microelectromechanical systems (MEMS) technology, friction and wear are considered as key factors that determine the lifetime and reliability of MEMS devices that contain contacting interfaces. However, to date, our knowledge of the mechanisms that govern friction and wear in MEMS is insufficient. Therefore, systematically investigating friction and wear at MEMS scale is critical for the commercial success of many potential MEMS devices. Specifically, since many emerging MEMS devices contain more sidewall interfaces, which are topographically and chemically different from in-plane interfaces, studying the friction and wear characteristics of MEMS sidewall surfaces is important. The microinstruments that have been used to date to investigate the friction and wear characteristics of MEMS sidewall surfaces possess several limitations induced either by their design or the structural film used to fabricate them. Therefore, in this paper, we report on a single-crystal-silicon-based microinstrument to study the frictional and wear behavior of MEMS sidewalls, which not only addresses some of the limitations of other microinstruments but is also easy to fabricate. The design, modeling and fabrication of the microinstrument are described in this paper. Additionally, the coefficients of static and dynamic friction of octadecyltrichlorosilane-coated sidewall surfaces as well as sidewall surfaces with only native oxide on them are also reported in this paper. (paper)

RF study and 3-D simulations of a side-coupling thermionic RF-gun

International Nuclear Information System (INIS)

Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

2014-01-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012 © . RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance

RF study and 3-D simulations of a side-coupling thermionic RF-gun

Science.gov (United States)

Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

2014-02-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012©. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

Modeling of MEMS Mirrors Actuated by Phase-Change Mechanism

Directory of Open Access Journals (Sweden)

David Torres

2017-04-01

Full Text Available Given the multiple applications for micro-electro-mechanical system (MEMS mirror devices, most of the research efforts are focused on improving device performance in terms of tilting angles, speed, and their integration into larger arrays or systems. The modeling of these devices is crucial for enabling a platform, in particular, by allowing for the future control of such devices. In this paper, we present the modeling of a MEMS mirror structure with four actuators driven by the phase-change of a thin film. The complexity of the device structure and the nonlinear behavior of the actuation mechanism allow for a comprehensive study that encompasses simpler electrothermal designs, thus presenting a general approach that can be adapted to most MEMS mirror designs based on this operation principle. The MEMS mirrors presented in this work are actuated by Joule heating and tested using optical techniques. Mechanical and thermal models including both pitch and roll displacements are developed by combining theoretical analysis (using both numerical and analytical tools with experimental data and subsequently verifying with quasi-static and dynamic experiments.

Applications of MEMS for Space Exploration

Science.gov (United States)

Tang, William C.

1998-03-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. Micro Electro Mechanical Systems (MEMS) is one of the key enabling technologies to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

RF characterization and testing of ridge waveguide transitions for RF power couplers

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rajesh; Jose, Mentes; Singh, G.N. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Girish [Department of Electrical Engineering, IIT Bombay, Mumbai 400076,India (India); Bhagwat, P.V. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2016-12-01

RF characterization of rectangular to ridge waveguide transitions for RF power couplers has been carried out by connecting them back to back. Rectangular waveguide to N type adapters are first calibrated by TRL method and then used for RF measurements. Detailed information is obtained about their RF behavior by measurements and full wave simulations. It is shown that the two transitions can be characterized and tuned for required return loss at design frequency of 352.2 MHz. This opens the possibility of testing and conditioning two transitions together on a test bench. Finally, a RF coupler based on these transitions is coupled to an accelerator cavity. The power coupler is successfully tested up to 200 kW, 352.2 MHz with 0.2% duty cycle.

Three dimensional MEMS supercapacitors

OpenAIRE

Sun, Wei

2011-01-01

The overall objective of this research is to achieve compact supercapacitors with high capacitance, large power density, and long cycle life for using as micropower sources to drive low power devices and sensors. The main shortcoming of supercapacitors as a power source is that its energy density typically is about 1/10 of that of batteries. To achieve compact supercapacitors of large energy density, supercapacitors must be developed with high capacitance and power density which are mainly de...

Fabrication of a dual-planar-coil dynamic microphone by MEMS techniques

International Nuclear Information System (INIS)

Horng, Ray-Hua; Chen, Kuo-Feng; Tsai, Yao-Cheng; Suen, Cheng-You; Chang, Chao-Chih

2010-01-01

A dual-planar-coil miniature dynamic microphone, one of the electro-acoustic transducers working with the principle of the electromagnetic induction, has been realized by semiconductor micro-processing and micro-electro-mechanical system (MEMS) techniques. This MEMS microphone mainly consists of a 1 µm thick diaphragm sandwiched by two spiral coils and vibrating in the region with the highest magnetic flux density generated by a double magnetic system. In comparison with the traditional dynamic microphone, besides the miniaturized dimension, the MEMS microphone also provides 325 times the vibration velocity of the diaphragm faster than the traditional microphone. Measured by an audio analyzer, the frequency response of the MEMS microphone is only 4.5 dBV Pa −1 lower than that of the traditional microphone in the range between 50 Hz and 20 kHz. The responsivity of −54.8 dB Pa −1 (at 1 kHz) of the MEMS device is competitive to that of a traditional commercial dynamic microphone which typically ranges from −50 to −60 dBV Pa −1 (at 1 kHz).

Olhar do cronista, registro da memória

Directory of Open Access Journals (Sweden)

Angela Maria Dutra da Silva Senra

2016-09-01

Full Text Available Propomos apresentar a pesquisa “Rastros da memória literária em crônicas dos jornais marianenses dos séculos XIX e XX” (PERPÉTUA, 2015, que tem como fonte um acervo de periódicos da cidade de Mariana (MG, hoje sob a guarda do Centro de Pesquisas Linguagem, Memória e Tradução do ICHS-UFOP. Dada a evidente relação desse acervo com a memória sociocultural da cidade, nossa pesquisa, em andamento, volta-se objetivamente para identificar e selecionar crônicas literárias publicadas nos periódicos, com a subsequente análise em sua correlação com a memória da região, sob as bases de um significativo material teórico sobre esse gênero. Assim, com vistas a adentrar no passado memorial da cidade de Mariana, apresentaremos o resultado parcial da nossa investigação, que tem proporcionado o conhecimento acerca da crônica; e do registro memorial dessa cidade em razão de sua importância no cenário histórico, social e cultural de Minas Gerais.

SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

KAUST Repository

Ramadan, Khaled S.

2012-04-01

Polymer based microelectromechanical systems (MEMS) micromachining is finding more interest in research and applications. This is due to its low cost and less time processing compared with silicon MEMS. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic devices. In addition to being processed with low cost, it is a biocompatible material with good mechanical properties. Also, amorphous silicon (α-Si) has found use as a sacrificial layer in silicon MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed using amorphous silicon (α-Si) as a sacrificial layer. Electrostatic actuation and sensing is used in many MEMS applications. SU-8 is a dielectric material which limits its direct use in electrostatic actuation. This thesis provides a MEMS process with two conductive metal electrodes that can be used for out-of-plane electrostatic applications like MEMS switches and variable capacitors. The process provides the fabrication of dimples that can be conductive or non-conductive to facilitate more flexibility for MEMS designers. This SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were tuned for two sets of thicknesses which are thin (5-10μm) and thick (130μm). Chevron bent-beam structures and different suspended beams (cantilevers and bridges) were fabricated to characterize the SU-8 process through extracting the density, Young’s Modulus and the Coefficient of Thermal Expansion (CTE) of SU-8. Also, the process was tested and used as an educational tool through which different MEMS structures were fabricated including MEMS switches, variable capacitors and thermal actuators.

Optimizing MEMS-Based Storage Devices for Mobile Battery-Powered Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

An emerging storage technology, called MEMS-based storage, promises nonvolatile storage devices with ultrahigh density, high rigidity, a small form factor, and low cost. For these reasons, MEMS-based storage devices are suitable for battery-powered mobile systems such as PDAs. For deployment in such

Nanotechnology: MEMS and NEMS and their applications to smart systems and devices

Science.gov (United States)

Varadan, Vijay K.

2003-10-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sizes now down at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: (1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic and micro molding techniques; (2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; (3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; (4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sending and control of a variety functions in automobile, aerospace, marine and

UAV-borne lidar with MEMS mirror-based scanning capability

Science.gov (United States)

Kasturi, Abhishek; Milanovic, Veljko; Atwood, Bryan H.; Yang, James

2016-05-01

Firstly, we demonstrated a wirelessly controlled MEMS scan module with imaging and laser tracking capability which can be mounted and flown on a small UAV quadcopter. The MEMS scan module was reduced down to a small volume of smartphone via Bluetooth while flying on a drone, and could project vector content, text, and perform laser based tracking. Also, a "point-and-range" LiDAR module was developed for UAV applications based on low SWaP (Size, Weight and Power) gimbal-less MEMS mirror beam-steering technology and off-the-shelf OEM LRF modules. For demonstration purposes of an integrated laser range finder module, we used a simple off-the-shelf OEM laser range finder (LRF) with a 100m range, +/-1.5mm accuracy, and 4Hz ranging capability. The LRFs receiver optics were modified to accept 20° of angle, matching the transmitter's FoR. A relatively large (5.0mm) diameter MEMS mirror with +/-10° optical scanning angle was utilized in the demonstration to maintain the small beam divergence of the module. The complete LiDAR prototype can fit into a small volume of battery. The MEMS mirror based LiDAR system allows for ondemand ranging of points or areas within the FoR without altering the UAV's position. Increasing the LRF ranging frequency and stabilizing the pointing of the laser beam by utilizing the onboard inertial sensors and the camera are additional goals of the next design.

RF study and 3-D simulations of a side-coupling thermionic RF-gun

Energy Technology Data Exchange (ETDEWEB)

Rimjaem, S., E-mail: sakhorn.rimjaem@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand); Kusoljariyakul, K.; Thongbai, C. [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand)

2014-02-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012{sup ©}. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

The RF Design of an HOM Polarized RF Gun for the ILC

International Nuclear Information System (INIS)

Wang, J.W.; Clendenin, J.E.; Colby, E.R.; Miller, R.A.; Lewellen, J.W.

2006-01-01

The ILC requires a polarized electron beam. While a highly polarized beam can be produced by a GaAs-type cathode in a DC gun of the type currently in use at SLAC, JLAB and elsewhere, the ILC injector system can be simplified and made more efficient if a GaAs-type cathode can be combined with a low emittance RF gun. Since this type of cathode is known to be extremely sensitive to vacuum contamination including back bombardment by electrons and ions, any successful polarized RF gun must have a significantly improved operating vacuum compared to existing RF guns. We present a new RF design for an L-Band normal conducting (NC) RF gun for the ILC polarized electron source. This design incorporates a higher order mode (HOM) structure, whose chief virtue in this application is an improved conductance for vacuum pumping on the cathode. Computer simulation models have been used to optimize the RF parameters with two principal goals: first to minimize the required RF power; second to reduce the peak surface field relative to the field at the cathode in order to suppress field emitted electron bombardment. The beam properties have been simulated initially using PARMELA. Vacuum and other practical issues for implementing this design are discussed

A Molecularly Imprinted Polymer (MIP)-Coated Microbeam MEMS Sensor for Chemical Detection

Science.gov (United States)

2015-09-01

ARL-RP-0536 ● SEP 2015 US Army Research Laboratory A Molecularly Imprinted Polymer (MIP)- Coated Microbeam MEMS Sensor for...ARL-RP-0536 ● SEP 2015 US Army Research Laboratory A Molecularly Imprinted Polymer (MIP)- Coated Microbeam MEMS Sensor for Chemical...TITLE AND SUBTITLE A Molecularly Imprinted Polymer (MIP)-Coated Microbeam MEMS Sensor for Chemical Detection 5a. CONTRACT NUMBER 5b. GRANT NUMBER

Accurate modeling of complete functional RF blocks: CHAMELEON RF

NARCIS (Netherlands)

Janssen, H.H.J.M.; Niehof, J.; Schilders, W.H.A.; Ciuprina, G.; Ioan, D.

2007-01-01

Next-generation nano-scale RF-IC designs have an unprecedented complexity and performance that will inevitably lead to costly re-spins and loss of market opportunities. In order to cope with this, the aim of the European Framework 6 CHAMELEON RF project is to develop methodologies and prototype

MemBrain: An Easy-to-Use Online Webserver for Transmembrane Protein Structure Prediction

Science.gov (United States)

Yin, Xi; Yang, Jing; Xiao, Feng; Yang, Yang; Shen, Hong-Bin

2018-03-01

Membrane proteins are an important kind of proteins embedded in the membranes of cells and play crucial roles in living organisms, such as ion channels, transporters, receptors. Because it is difficult to determinate the membrane protein's structure by wet-lab experiments, accurate and fast amino acid sequence-based computational methods are highly desired. In this paper, we report an online prediction tool called MemBrain, whose input is the amino acid sequence. MemBrain consists of specialized modules for predicting transmembrane helices, residue-residue contacts and relative accessible surface area of α-helical membrane proteins. MemBrain achieves a prediction accuracy of 97.9% of A TMH, 87.1% of A P, 3.2 ± 3.0 of N-score, 3.1 ± 2.8 of C-score. MemBrain-Contact obtains 62%/64.1% prediction accuracy on training and independent dataset on top L/5 contact prediction, respectively. And MemBrain-Rasa achieves Pearson correlation coefficient of 0.733 and its mean absolute error of 13.593. These prediction results provide valuable hints for revealing the structure and function of membrane proteins. MemBrain web server is free for academic use and available at www.csbio.sjtu.edu.cn/bioinf/MemBrain/. [Figure not available: see fulltext.

Multi-scale Analysis of MEMS Sensors Subject to Drop Impacts

Directory of Open Access Journals (Sweden)

Sarah Zerbini

2007-09-01

Full Text Available The effect of accidental drops on MEMS sensors are examined within the frame-work of a multi-scale finite element approach. With specific reference to a polysilicon MEMSaccelerometer supported by a naked die, the analysis is decoupled into macro-scale (at dielength-scale and meso-scale (at MEMS length-scale simulations, accounting for the verysmall inertial contribution of the sensor to the overall dynamics of the device. Macro-scaleanalyses are adopted to get insights into the link between shock waves caused by the impactagainst a target surface and propagating inside the die, and the displacement/acceleration his-tories at the MEMS anchor points. Meso-scale analyses are adopted to detect the most stresseddetails of the sensor and to assess whether the impact can lead to possible localized failures.Numerical results show that the acceleration at sensor anchors cannot be considered an ob-jective indicator for drop severity. Instead, accurate analyses at sensor level are necessary toestablish how MEMS can fail because of drops.

SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

KAUST Repository

Ramadan, Khaled S.

2012-01-01

MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed

Memória, Identidade e Patrimônio Quilombola

Directory of Open Access Journals (Sweden)

Rodrigo da Costa Segovia

2015-12-01

Full Text Available Este artigo visa analisar a Comunidade Quilombola, sua memória e identidade, nesse contexto busca-se dialogar com a pesquisa que está sendo desenvolvida junto a Comunidade Quilombo Madeira, bem como com o projeto para conclusão do Mestrado em Memória Social e Patrimônio Cultural da Universidade Federal de Pelotas. Sendo assim não foi possível deixar de fazer colocações relacionadas a Comunidades Quilombolas, em primeiro momento abordam-se questões relativas ao termo quilombola, logo a pós uma breve apresentação da comunidade onde a pesquisa está sendo efetuada e por final acerca-se com maior ênfase as discussões sobre Memória e Identidade.

A nuclear micro battery for Mems devices

International Nuclear Information System (INIS)

Lal, A.; Bilbao Y Leon, R.M.; Guo, H.; Li, H.; Santanam, S.; Yao, R.; Blanchard, J.; Henderson, D.

2001-01-01

Micro-electromechanical Systems (MEMS) have not gained wide use because they lack the on-device power required by many important applications. Several forms of energy could be considered to supply this needed power (solar, fossil fuels, etc), but nuclear sources provide an intriguing option in terms of power density and lifetime. This paper describes several approaches for establishing the viability of nuclear sources for powering realistic MEMS devices. Isotopes currently being used include alpha and low-energy beta emitters. The sources are in both solid and liquid form, and a technique for plating a solid source from a liquid source has been investigated. Several approaches are being explored for the production of MEMS power sources. The first concept is a junction-type battery. The second concept involves a more direct use of the charged particles produced by the decay: the creation of a resonator by inducing movement due to attraction or repulsion resulting from the collection of charged particles. Performance results are provided for each of these concepts. (authors)

Use of thermal cycling to reduce adhesion of OTS coated coated MEMS cantilevers

Science.gov (United States)

Ali, Shaikh M.; Phinney, Leslie M.

2003-01-01

°Microelectromechanical systems (MEMS) have enormous potential to contribute in diverse fields such as automotive, health care, aerospace, consumer products, and biotechnology, but successful commercial applications of MEMS are still small in number. Reliability of MEMS is a major impediment to the commercialization of laboratory prototypes. Due to the multitude of MEMS applications and the numerous processing and packaging steps, MEMS are exposed to a variety of environmental conditions, making the prediction of operational reliability difficult. In this paper, we investigate the effects of operating temperature on the in-use adhesive failure of electrostatically actuated MEMS microcantilevers coated with octadecyltrichlorosilane (OTS) films. The cantilevers are subjected to repeated temperature cycles and electrostatically actuated at temperatures between 25°C and 300°C in ambient air. The experimental results indicate that temperature cycling of the OTS coated cantilevers in air reduces the sticking probability of the microcantilevers. The sticking probability of OTS coated cantilevers was highest during heating, which decreased during cooling, and was lowest during reheating. Modifications to the OTS release method to increase its yield are also discussed.

MEMS-Electronic-Photonic Heterogeneous Integrated FMCW Ladar Source

Science.gov (United States)

2015-12-18

1   1.1.   E-­‐ PHI  PHASE  2  –  MEMS  LADAR  SOURCE...4   3.2.   PROPOSED  EO-­‐PLL   ARCHITECTURE  WITH  GATED  RAMP-­‐SWITCHING... PHI  Phase  2  –  MEMS  LADAR  Source   In  Phase  2,  we  continue  the  development  of  the  FMCW  LADAR

Nanogenerators for self-powering nanosystems and piezotronics for smart MEMS/NEMS

KAUST Repository

Wang, Zhong Lin

2011-01-01

Two new fields are introduced to MEMS/NEMS: a nanogenerator that harvests mechanical energy for powering nanosystems, and strained induced piezotronics for smart MEMS. Fundamentally, due to the polarization of ions in a crystal that has non

Electrochemical impedance spectroscopy based MEMS sensors for phthalates detection in water and juices

KAUST Repository

Zia, Asif I

2013-06-10

Phthalate esters are ubiquitous environmental and food pollutants well known as endocrine disrupting compounds (EDCs). These developmental and reproductive toxicants pose a grave risk to the human health due to their unlimited use in consumer plastic industry. Detection of phthalates is strictly laboratory based time consuming and expensive process and requires expertise of highly qualified and skilled professionals. We present a real time, non-invasive, label free rapid detection technique to quantify phthalates\\' presence in deionized water and fruit juices. Electrochemical impedance spectroscopy (EIS) technique applied to a novel planar inter-digital (ID) capacitive sensor plays a vital role to explore the presence of phthalate esters in bulk fluid media. The ID sensor with multiple sensing gold electrodes was fabricated on silicon substrate using micro-electromechanical system (MEMS) device fabrication technology. A thin film of parylene C polymer was coated as a passivation layer to enhance the capacitive sensing capabilities of the sensor and to reduce the magnitude of Faradic current flowing through the sensor. Various concentrations, 0.002ppm through to 2ppm of di (2-ethylhexyl) phthalate (DEHP) in deionized water, were exposed to the sensing system by dip testing method. Impedance spectra obtained was analysed to determine sample conductance which led to consequent evaluation of its dielectric properties. Electro-chemical impedance spectrum analyser algorithm was employed to model the experimentally obtained impedance spectra. Curve fitting technique was applied to deduce constant phase element (CPE) equivalent circuit based on Randle\\'s equivalent circuit model. The sensing system was tested to detect different concentrations of DEHP in orange juice as a real world application. The result analysis indicated that our rapid testing technique is able to detect the presence of DEHP in all test samples distinctively.

Electrochemical impedance spectroscopy based MEMS sensors for phthalates detection in water and juices

International Nuclear Information System (INIS)

Zia, Asif I; Syaifudin, A R Mohd; Mukhopadhyay, S C; Yu, P L; Al-Bahadly, I H; Gooneratne, Chinthaka P; Kosel, Juergen; Liao, Tai-Shan

2013-01-01

Phthalate esters are ubiquitous environmental and food pollutants well known as endocrine disrupting compounds (EDCs). These developmental and reproductive toxicants pose a grave risk to the human health due to their unlimited use in consumer plastic industry. Detection of phthalates is strictly laboratory based time consuming and expensive process and requires expertise of highly qualified and skilled professionals. We present a real time, non-invasive, label free rapid detection technique to quantify phthalates' presence in deionized water and fruit juices. Electrochemical impedance spectroscopy (EIS) technique applied to a novel planar inter-digital (ID) capacitive sensor plays a vital role to explore the presence of phthalate esters in bulk fluid media. The ID sensor with multiple sensing gold electrodes was fabricated on silicon substrate using micro-electromechanical system (MEMS) device fabrication technology. A thin film of parylene C polymer was coated as a passivation layer to enhance the capacitive sensing capabilities of the sensor and to reduce the magnitude of Faradic current flowing through the sensor. Various concentrations, 0.002ppm through to 2ppm of di (2-ethylhexyl) phthalate (DEHP) in deionized water, were exposed to the sensing system by dip testing method. Impedance spectra obtained was analysed to determine sample conductance which led to consequent evaluation of its dielectric properties. Electro-chemical impedance spectrum analyser algorithm was employed to model the experimentally obtained impedance spectra. Curve fitting technique was applied to deduce constant phase element (CPE) equivalent circuit based on Randle's equivalent circuit model. The sensing system was tested to detect different concentrations of DEHP in orange juice as a real world application. The result analysis indicated that our rapid testing technique is able to detect the presence of DEHP in all test samples distinctively.

Calculation of secondary capacitance of compact Tesla pulse transformer

International Nuclear Information System (INIS)

Yu Binxiong; Liu Jinliang

2013-01-01

An analytic expression of the secondary capacitance of a compact Tesla pulse transformer is derived. Calculated result by the expression shows that two parts contribute to the secondary capacitance, namely the capacitance between inner and outer magnetic cores and the attached capacitance caused by the secondary winding. The attached capacitance equals to the capacitance of a coaxial line which is as long as the secondary coil, and whose outer and inner diameters are as large as the inner diameter of the outer magnetic and the outer diameter of the inner magnetic core respectively. A circuital model for analyzing compact Tesla transformer is built, and numeric calculation shows that the expression of the secondary capacitance is correct. Besides, a small compact Tesla transformer is developed, and related test is carried out. Test result confirms the calculated results by the expression derived. (authors)

Quantum capacitance of the armchair-edge graphene nanoribbon

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 81; Issue 2. Quantum capacitance of the ... Abstract. The quantum capacitance, an important parameter in the design of nanoscale devices, is derived for armchair-edge single-layer graphene nanoribbon with semiconducting property. The quantum capacitance ...

Lembrar-esquecer: trabalhando com as memórias infantis

Directory of Open Access Journals (Sweden)

Renata Sieiro Fernandes

Full Text Available Baseando-se nas obras de autores que focalizam a velhice e a memória, valemo-nos da proposta de construção de conjuntos fotográficos e da metodologia de análise para elaborar um exercício/desafio semelhante para crianças da faixa etária de 9-10 anos. Em concordância com os autores, também nos propusemos a pensar sobre como a memória das crianças - assim como a dos velhos - pode se construir e se organizar por meio de suportes fotográficos representativos de fragmentos da vida cotidiana. Os dois grupos compostos por seres que se encontram nas margens do tempo, se distanciam e se aproximam nessa particularidade. Intuitiva e reflexivamente, as crianças elaboraram seus conceitos de memória, envolvendo as lembranças e os esquecimentos, representando-os de formas visuais variadas e criativas, indicando que os movimentos constitutivos da memória dão indícios de tentativas de ordenação de um tempo composto de vários tempos.

Wafer level packaging of MEMS

International Nuclear Information System (INIS)

Esashi, Masayoshi

2008-01-01

Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review. (topical review)

Distúrbios de memória em pacientes epilépticos

Directory of Open Access Journals (Sweden)

STELLA FLORINDO

1999-01-01

Full Text Available O autor estudou distúrbios de memória em pacientes epilépticos com crises parciais complexas (CPC, com os objetivos de: 1 identificar estes distúrbios; e 2 comparar os resultados dos pacientes com os dos controles. Foram estudados 50 pacientes adultos e 20 sujeitos sem enfermidades neuropsiquiátricas. Os métodos consistiram em: 1 investigação da atividade mnemônica através do Teste de Memória de Wechsler (subtestes: Armazenamento e Recuperação, Memória Recente e Memória Imediata; e 2 comparação entre os resultados de ambos os grupos. 3 associação entre SPECT Cerebral e atividade mnemônica. Nos três subtestes, os pacientes apresentaram desempenho cognitivo significativamente inferior ao dos controles (p <0,05. Constatou-se a associação entre hipofluxo em região temporal esquerda e distúrbio da memória nos três subtestes. Concluiu-se que há associação entre CPC e distúrbios da atividade mnemônica.

Evaluation of MEMS-Based Wireless Accelerometer Sensors in Detecting Gear Tooth Faults in Helicopter Transmissions

Science.gov (United States)

Lewicki, David George; Lambert, Nicholas A.; Wagoner, Robert S.

2015-01-01

The diagnostics capability of micro-electro-mechanical systems (MEMS) based rotating accelerometer sensors in detecting gear tooth crack failures in helicopter main-rotor transmissions was evaluated. MEMS sensors were installed on a pre-notched OH-58C spiral-bevel pinion gear. Endurance tests were performed and the gear was run to tooth fracture failure. Results from the MEMS sensor were compared to conventional accelerometers mounted on the transmission housing. Most of the four stationary accelerometers mounted on the gear box housing and most of the CI's used gave indications of failure at the end of the test. The MEMS system performed well and lasted the entire test. All MEMS accelerometers gave an indication of failure at the end of the test. The MEMS systems performed as well, if not better, than the stationary accelerometers mounted on the gear box housing with regards to gear tooth fault detection. For both the MEMS sensors and stationary sensors, the fault detection time was not much sooner than the actual tooth fracture time. The MEMS sensor spectrum data showed large first order shaft frequency sidebands due to the measurement rotating frame of reference. The method of constructing a pseudo tach signal from periodic characteristics of the vibration data was successful in deriving a TSA signal without an actual tach and proved as an effective way to improve fault detection for the MEMS.

Resistive and Capacitive Based Sensing Technologies

Directory of Open Access Journals (Sweden)

Winncy Y. Du

2008-04-01

Full Text Available Resistive and capacitive (RC sensors are the most commonly used sensors. Their applications span homeland security, industry, environment, space, traffic control, home automation, aviation, and medicine. More than 30% of modern sensors are direct or indirect applications of the RC sensing principles. This paper reviews resistive and capacitive sensing technologies. The physical principles of resistive sensors are governed by several important laws and phenomena such as Ohm’s Law, Wiedemann-Franz Law; Photoconductive-, Piezoresistive-, and Thermoresistive Effects. The applications of these principles are presented through a variety of examples including accelerometers, flame detectors, pressure/flow rate sensors, RTDs, hygristors, chemiresistors, and bio-impedance sensors. The capacitive sensors are described through their three configurations: parallel (flat, cylindrical (coaxial, and spherical (concentric. Each configuration is discussed with respect to its geometric structure, function, and application in various sensor designs. Capacitance sensor arrays are also presented in the paper.

Micro-fabrication technology for piezoelectric film formation and its application to MEMS

OpenAIRE

一木, 正聡; 曹, 俊杰; 張, 麓〓; 王, 占杰; 前田, 龍太郎; Masaaki, ICHIKI; Jiunn Jye, TSAUR; Lulu, ZHANG; Zhang Jie, WANG; Ryutaro, MAEDA; 産業技術総合研究所; 産業技術総合研究所; 産業技術総合研究所; 東北大学; 産業技術総合研究所

2005-01-01

Technological problems for realization of Micro Electro-mechanical System (MEMS) are discussed and an introduction of smart materials (PZT) is encouraged. The film formation and micromaching technology are discussed in integration of PZT thin films into MEMS. Further developments are proposed on PZT micro sensors and actuators with special emphasis laid on exploration of new application fields of MEMS, such as scanning mirror. Internal stress is estimated and analyzed for the improvement of d...

Characterization of diamond-like carbon thin film synthesized by RF atmospheric pressure plasma Ar/CH4 jet

Science.gov (United States)

Sohbatzadeh, Farshad; Safari, Reza; Etaati, G. Reza; Asadi, Eskandar; Mirzanejhad, Saeed; Hosseinnejad, Mohammad Taghi; Samadi, Omid; Bagheri, Hanieh

2016-01-01

The growth of diamond like carbon (DLC) on a Pyrex glass was investigated by a radio frequency (RF) atmospheric pressure plasma jet (APPJ). The plasma jet with capacitive configuration ran by a radio frequency power supply at 13.56 MHz. Alumina ceramic was used as dielectric barrier. Ar and CH4 were used in atmospheric pressure as carrier and precursor gases, respectively. Diamond like carbon thin films were deposited on Pyrex glass at substrate temperature and applied power of 130 °C and 250 Watts, respectively. Performing field emission scanning electron microscope (FE-SEM) and laser Raman spectroscopy analysis resulted in deposition rate and the ID/IG ratio of 21.31 nm/min and 0.47, respectively. The ID/IG ratio indicated that the coating possesses relative high sp3 content The optical emission spectroscopy (OES) diagnostic was applied to diagnose plasma jet species. Estimating electron temperature and density of the RF-APPJ resulted in 1.36 eV and 2.75 × 1014 cm-3 at the jet exit, respectively.

Sheath heating in low-pressure capacitive radio frequency discharges

International Nuclear Information System (INIS)

Wood, B.P.

1991-01-01

Capacitively coupled, parallel plate, r.f. discharges are commonly used for materials processing. The electrons in such a discharge gain and lose energy by reflection from the oscillating sheaths which form at the electrodes. Previous models of the electron heating by this mechanism have assumed that the sheath motion is slow compared to the electron thermal velocity, so that the electron energy change from each reflection is small. Here, the heating rate, density, and sheath width relations are derived analytically in the limit of very fast sheath motion. Numerical results are presented spanning the slow and fast limits. Results from particle-in-cell simulations show that in the large-energy-change regime, an electron beam is produced on each sheath expansion. At low pressure, this beam can traverse the plasma and interact with the sheath at the opposite electrode, producing a beam energy and density dependence on the length of the discharge. The beam produces a time and space varying warm tail on the electron energy distribution. Two revised heating models are derived, assuming power-law and two-temperature electron energy distributions, with temporal variation in electron temperature. These revised models yield new predictions for the variation of the power, density, and sheath thickness with applied r.f. voltage. These predictions are compared with simulation results and laboratory experiment. The electron sheath motion is investigated experimentally by observing the signal on a floating probe in the sheath region. This is compared to the signal product by a non-linear circuit model which accounts for the perturbation of the sheath potential by the probe and includes various forms of sheath motion. The experimental observations are consistent with the analytical predictions. Experimental observations of plasma-sheath resonance oscillations are presented which agree with analytical predictions

Capacitance of carbon-based electrical double-layer capacitors.

Science.gov (United States)

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

U.S. Army Corrosion Office's storage and quality requirements for military MEMS program

Science.gov (United States)

Zunino, J. L., III; Skelton, D. R.

2007-04-01

As the Army transforms into a more lethal, lighter and agile force, the technologies that support these systems must decrease in size while increasing in intelligence. Micro-electromechanical systems (MEMS) are one such technology that the Army and DOD will rely on heavily to accomplish these objectives. Conditions for utilization of MEMS by the military are unique. Operational and storage environments for the military are significantly different than those found in the commercial sector. Issues unique to the military include; high G-forces during gun launch, extreme temperature and humidity ranges, extended periods of inactivity (20 years plus) and interaction with explosives and propellants. The military operational environments in which MEMS will be stored or required to function are extreme and far surpass any commercial operating conditions. Security and encryption are a must for all MEMS communication, tracking, or data reporting devices employed by the military. Current and future military applications of MEMS devices include safety and arming devices, fuzing devices, various guidance systems, sensors/detectors, inertial measurement units, tracking devices, radio frequency devices, wireless Radio Frequency Identifications (RFIDs) and network systems, GPS's, radar systems, mobile base systems and information technology. MEMS embedded into these weapons systems will provide the military with new levels of speed, awareness, lethality, and information dissemination. The system capabilities enhanced by MEMS will translate directly into tactical and strategic military advantages.

Development of a Multi-User Polyimide-MEMS Fabrication Process and its Application to MicroHotplates

KAUST Repository

Lizardo, Ernesto B.

2013-01-01

Micro-electro-mechanical systems (MEMS) became possible thanks to the silicon based technology used to fabricate integrated circuits. Originally, MEMS fabrication was limited to silicon based techniques and materials, but the expansion of MEMS

Characteristic performance of radio-frequency(RF) plasma heating using inverter RF power supplies

International Nuclear Information System (INIS)

Imai, Takahiro; Uesugi, Yoshihiko; Takamura, Shuichi; Sawada, Hiroyuki; Hattori, Norifumi

2000-01-01

High heat flux plasma are produced by high powe (∼14 kW) ICRF heating using inverter power supplies in the linear divertor simulator NAGDIS-II. The power flow of radiated rf power is investigated by a calorimetric method. Conventional power calculation using antenna voltage and current gives that about 70% of the rf power is radiated into the plasma. But increase of the heat load at the target and anode is about 10% of the rf power. Through this experiment, we find that about half of the rf power is lost at the antenna surface through the formation of rf induced sheath. And about 30% of the power is lost into the vacuum vessel through the charge exchange and elastic collision of ions with neutrals. (author)

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

Science.gov (United States)

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

2013-12-03

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

MEMS for Space Flight Applications

Science.gov (United States)

Lawton, R.

1998-01-01

Micro-Electrical Mechanical Systems (MEMS) are entering the stage of design and verification to demonstrate the utility of the technology for a wide range of applications including sensors and actuators for military, space, medical, industrial, consumer, automotive and instrumentation products.

Simulations of S-band RF gun with RF beam control

Science.gov (United States)

Barnyakov, A. M.; Levichev, A. E.; Maltseva, M. V.; Nikiforov, D. A.

2017-08-01

The RF gun with RF control is discussed. It is based on the RF triode and two kinds of the cavities. The first cavity is a coaxial cavity with cathode-grid assembly where beam bunches are formed, the second one is an accelerating cavity. The features of such a gun are the following: bunched and relativistic beams in the output of the injector, absence of the back bombarding electrons, low energy spread and short length of the bunches. The scheme of the injector is shown. The electromagnetic field simulation and longitudinal beam dynamics are presented. The possible using of the injector is discussed.

The Pyramidal Capacitated Vehicle Routing Problem

DEFF Research Database (Denmark)

Lysgaard, Jens

This paper introduces the Pyramidal Capacitated Vehicle Routing Problem (PCVRP) as a restricted version of the Capacitated Vehicle Routing Problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the Pyramidal Traveling Salesman Problem (PTSP). A pyramidal...

The pyramidal capacitated vehicle routing problem

DEFF Research Database (Denmark)

Lysgaard, Jens

2010-01-01

This paper introduces the pyramidal capacitated vehicle routing problem (PCVRP) as a restricted version of the capacitated vehicle routing problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the pyramidal traveling salesman problem (PTSP). A pyramidal...

MEMS and mil/aero: technology push and market pull

Science.gov (United States)

Clifford, Thomas H.

2001-04-01

MEMS offers attractive solutions to high-density fluidics, inertial, optical, switching and other demanding military/aerospace (mil/aero) challenges. However, full acceptance must confront the realities of production-scale producibility, verifiability, testability, survivability, as well as long-term reliability. Data on these `..ilities' are crucial, and are central in funding and deployment decisions. Similarly, mil/aero users must highlight specific missions, environmental exposures, and procurement issues, as well as the quirks of its designers. These issues are particularly challenging in MEMS, because of the laws of physics and business economics, as well as the risks of deploying leading-edge technology into no-fail applications. This paper highlights mil/aero requirements, and suggests reliability/qualification protocols, to guide development effort and to reassure mil/aero users that MEMS labs are mindful of the necessary realities.

Amplitude saturation of MEMS resonators explained by autoparametric resonance

International Nuclear Information System (INIS)

Van der Avoort, C; Bontemps, J J M; Steeneken, P G; Le Phan, K; Van Beek, J T M; Van der Hout, R; Hulshof, J; Fey, R H B

2010-01-01

This paper describes a phenomenon that limits the power handling of MEMS resonators. It is observed that above a certain driving level, the resonance amplitude becomes independent of the driving level. In contrast to previous studies of power handling of MEMS resonators, it is found that this amplitude saturation cannot be explained by nonlinear terms in the spring constant or electrostatic force. Instead we show that the amplitude in our experiments is limited by nonlinear terms in the equation of motion which couple the in-plane length-extensional resonance mode to one or more out-of-plane (OOP) bending modes. We present experimental evidence for the autoparametric excitation of these OOP modes using a vibrometer. The measurements are compared to a model that can be used to predict a power-handling limit for MEMS resonators

Amplitude saturation of MEMS resonators explained by autoparametric resonance

Energy Technology Data Exchange (ETDEWEB)

Van der Avoort, C; Bontemps, J J M; Steeneken, P G; Le Phan, K; Van Beek, J T M [NXP Research, Eindhoven (Netherlands); Van der Hout, R; Hulshof, J [Department of Mathematics, VU University—Faculty of Sciences, De Boelelaan 1081a, 1081 HV Amsterdam (Netherlands); Fey, R H B, E-mail: cas.van.der.avoort@nxp.com [Department of Mechanical Engineering, Eindhoven University of Technology, PO Box 513, 5600 MB, Eindhoven (Netherlands)

2010-10-15

This paper describes a phenomenon that limits the power handling of MEMS resonators. It is observed that above a certain driving level, the resonance amplitude becomes independent of the driving level. In contrast to previous studies of power handling of MEMS resonators, it is found that this amplitude saturation cannot be explained by nonlinear terms in the spring constant or electrostatic force. Instead we show that the amplitude in our experiments is limited by nonlinear terms in the equation of motion which couple the in-plane length-extensional resonance mode to one or more out-of-plane (OOP) bending modes. We present experimental evidence for the autoparametric excitation of these OOP modes using a vibrometer. The measurements are compared to a model that can be used to predict a power-handling limit for MEMS resonators.

Rare Variants in Genes Encoding MuRF1 and MuRF2 Are Modifiers of Hypertrophic Cardiomyopathy

Directory of Open Access Journals (Sweden)

Ming Su

2014-05-01

Full Text Available Modifier genes contribute to the diverse clinical manifestations of hypertrophic cardiomyopathy (HCM, but are still largely unknown. Muscle ring finger (MuRF proteins are a class of muscle-specific ubiquitin E3-ligases that appear to modulate cardiac mass and function by regulating the ubiquitin-proteasome system. In this study we screened all the three members of the MuRF family, MuRF1, MuRF2 and MuRF3, in 594 unrelated HCM patients and 307 healthy controls by targeted resequencing. Identified rare variants were confirmed by capillary Sanger sequencing. The prevalence of rare variants in both MuRF1 and MuRF2 in HCM patients was higher than that in control subjects (MuRF1 13/594 (2.2% vs. 1/307 (0.3%, p = 0.04; MuRF2 22/594 (3.7% vs. 2/307 (0.7%; p = 0.007. Patients with rare variants in MuRF1 or MuRF2 were younger (p = 0.04 and had greater maximum left ventricular wall thickness (p = 0.006 than those without such variants. Mutations in genes encoding sarcomere proteins were present in 19 (55.9% of the 34 HCM patients with rare variants in MuRF1 and MuRF2. These data strongly supported that rare variants in MuRF1 and MuRF2 are associated with higher penetrance and more severe clinical manifestations of HCM. The findings suggest that dysregulation of the ubiquitin-proteasome system contributes to the pathogenesis of HCM.

rf impedance of the accelerating beam gap and its significance to the TRIUMF rf system

International Nuclear Information System (INIS)

Poirier, R.

1979-03-01

The rf system at TRIUMF is now operating with the highest Q, the lowest rf leakage into the beam gap, the best voltage stability, and the lowest resonator strongback temperatures ever measured since it was first put into operation. This paper describes the calculation of the rf impedance of the beam gap and its correlation to the rf problems encountered, which eventually led to modifications to the flux guides and resonator tips to accomplish the improved operation of the rf system

Avaliação da memória sob anestesia venosa total

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Gulistan Aktas

2013-06-01

Full Text Available JUSTIFICATIVA E OBJETIVOS: Neste estudo, objetivamos avaliar a memória implícita e explícita em pacientes submetidos à cirurgia abdominal sob anestesia venosa total (AVT com propofol e remifentanil, na qual o nível de anestesia foi controlado pelo monitoramento do índice bispectral (BIS. MÉTODO: Anestesia venosa total foi administrada a 60 pacientes adultos para obter níveis de BIS de 40-60. Os pacientes foram randomicamente divididos em três grupos, de acordo com as gravações que ouviram. Os pacientes do grupo categoria (CT ouviram uma fita gravada contendo cinco nomes de animais. Os pacientes do grupo recordar palavras (RP ouviram uma fita gravada contendo cinco palavras de frequência média na língua turca, depois de adaptadas. Os pacientes do grupo controle (GC ouviram os sons do mar até o fim da cirurgia. Duas horas após a cirurgia, os testes foram administrados a cada paciente na sala de recuperação para avaliar a memória. RESULTADOS: Houve uma diferença entre os escores dos grupos CT e GC no Miniexame do Estado Mental (MMSE; todos os escores foram > 20. Os resultados dos testes de categoria e recordar palavras, aplicados para avaliar a memória implícita, não foram estatisticamente diferentes entre os grupos. Não houve evidência de memória implícita em nenhum dos pacientes. Um paciente lembrou-se de ouvir "o som de água" como uma prova de memória explícita. Onze pacientes declararam não ter sonhado. CONCLUSÕES: Apesar de não termos encontrado nenhuma evidência de memória implícita sob anestesia adequada com AVT, um paciente apresentou memória explícita. Embora a profundidade adequada da anestesia fornecida pelo monitoramento do BIS corrobore nossos resultados para a memória implícita, ela não explica os resultados para a memória explícita.

Design of millimeter-wave MEMS-based reconfigurable front-end circuits using the standard CMOS technology

International Nuclear Information System (INIS)

Chang, Chia-Chan; Hsieh, Sheng-Chi; Chen, Chien-Hsun; Huang, Chin-Yen; Yao, Chun-Han; Lin, Chun-Chi

2011-01-01

This paper describes the designs of three reconfigurable CMOS-MEMS front-end components for V-/W-band applications. The suspended MEMS structure is released through post-CMOS micromachining. To achieve circuit reconfigurability, dual-state and multi-state fishbone-beam-drive actuators are proposed herein. The reconfigurable bandstop is fabricated in a 0.35 µm CMOS process with the chip size of 0.765 × 0.98 mm 2 , showing that the stop-band frequency can be switched from 60 to 50 GHz with 40 V actuation voltage. The measured isolation is better than 38 dB at 60 GHz and 34 dB at 50 GHz, respectively. The bandpass filter-integrated single-pole single-throw switch, using the 0.18 µm CMOS process, demonstrates that insertion loss and return loss are better than 6.2 and 15 dB from 88 to 100 GHz in the on-state, and isolation is better than 21 dB in the off-state with an actuation voltage of 51 V. The chip size is 0.7 × 1.04 mm 2 . The third component is a reconfigurable slot antenna fabricated in a 0.18 µm CMOS process with the chip size of 1.2 × 1.2 mm 2 . By utilizing the multi-state actuators, the frequencies of this antenna can be switched to 43, 47, 50.5, 54, 57.5 GHz with return loss better than 20 dB. Those circuits demonstrate good RF performance and are relatively compact by employing several size miniaturizing techniques, thereby enabling a great potential for the future single-chip transceiver.

Integrated Magnetic MEMS Relays: Status of the Technology

Directory of Open Access Journals (Sweden)

Giuseppe Schiavone

2014-08-01

Full Text Available The development and application of magnetic technologies employing microfabricated magnetic structures for the production of switching components has generated enormous interest in the scientific and industrial communities over the last decade. Magnetic actuation offers many benefits when compared to other schemes for microelectromechanical systems (MEMS, including the generation of forces that have higher magnitude and longer range. Magnetic actuation can be achieved using different excitation sources, which create challenges related to the integration with other technologies, such as CMOS (Complementary Metal Oxide Semiconductor, and the requirement to reduce power consumption. Novel designs and technologies are therefore sought to enable the use of magnetic switching architectures in integrated MEMS devices, without incurring excessive energy consumption. This article reviews the status of magnetic MEMS technology and presents devices recently developed by various research groups, with key focuses on integrability and effective power management, in addition to the ability to integrate the technology with other microelectronic fabrication processes.

Finite element modeling of micromachined MEMS photon devices

Science.gov (United States)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Finite Element Modeling of Micromachined MEMS Photon Devices

International Nuclear Information System (INIS)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-01-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness

Thermoelectrical Generator for a MEMS-Fuze

Directory of Open Access Journals (Sweden)

A. K. Efremov

2015-01-01

Full Text Available The structure of modern fuzes includes micro-electromechanical systems (MEMS, which have such advanced devices as micro-accelerometers and micro-switches, being triggered at a specified level of setback. Independent power source (PS, as an inherent part of the MEMSfuze, charges an energy storage unit during the shot and triggers the fuze firing circuit when the shell encounters the target. Operating level of the control signal should be achieved within the time of remote arming, determined by the type of ammunition. The paper considers a possibility to develop PS as a thermoelectric generator (TEG with aerodynamic heating of hot junctions due to friction of the projectile body on the incoming airflow. The initial temperature is determined by the driving band cutting into the rifling and friction during the movement of projectile through the tube bore. The paper presents a technique for calculating the temperature field along the body of the projectile from the critical point, located at the top of the shell head. The solution of the equation of heat balance reveals the temporal development of the projectile body temperature. The proposed mathematical model of the TEG describes the process of converting heat into electrical output signal (thermo-EMF. An example of calculation for a specific artillery system – 57-mm anti-aircraft gun S-60 is given. Calculation of the TEG output signal was limited by the time, which is necessary to reach the top of the projectile trajectory. It is shown that at high altitude the temperature difference may drop to zero, thus cutting off the TEG output signal. Selection of capacitive storage parameters can be based on the reliability test conditions of the fuze firing circuit actuators, taking into account the partial storage discharge on the trajectory before the projectile encounters the target.

Scanning Capacitance Microscopy | Materials Science | NREL

Science.gov (United States)

obtained using scanning capacitance microscopy. Top Right: Image of p-type and n-type material, obtained 'fingers' of light-colored n-type material on a yellow and blue background representing p-type material material, obtained using scanning capacitance microscopy, in a sample semiconductor device; the image shows

MEMS based digital transform spectrometers

Science.gov (United States)

Geller, Yariv; Ramani, Mouli

2005-09-01

Earlier this year, a new breed of Spectrometers based on Micro-Electro-Mechanical-System (MEMS) engines has been introduced to the commercial market. The use of these engines combined with transform mathematics, produces powerful spectrometers at unprecedented low cost in various spectral regions.

Aprendizado e memória Learning and memory

Directory of Open Access Journals (Sweden)

Paul Lombroso

2004-09-01

Full Text Available A memória é dividida de duas grandes formas: explícita e implícita. O hipocampo é necessário para a formação das memórias explícitas, ao passo que várias outras regiões do cérebro, incluindo o estriado, a amígdala e o nucleus accumbens, estão envolvidos na formação das memórias implícitas. A formação de todas as memórias requer alterações morfológicas nas sinapses: novas sinapses devem ser formadas ou antigas precisam ser fortalecidas. Considera-se que essas alterações reflitam a base celular subjacente das memórias persistentes. Consideráveis avanços têm ocorrido na última década em relação a nossa compreensão sobre as bases moleculares da formação dessas memórias. Um regulador-chave da plasticidade sináptica é uma via de sinalização que inclui a proteína-quinase ativada por mitógenos (MAP. Como essa via é necessária para a memória e o aprendizado normais, não é surpreendente que as mutações nos membros dessa via levem a prejuízos no aprendizado. A neurofibromatose, a síndrome de Coffin-Lowry e a de Rubinstein-Taybi são três exemplos de transtornos de desenvolvimento que apresentam mutações em componentes-chave na via de sinalização da proteína-quinase MAP.Memory is broadly divided into declarative and nondeclarative forms of memory. The hippocampus is required for the formation of declarative memories, while a number of other brain regions including the striatum, amygdala and nucleus accumbens are involved in the formation of nondeclarative memories. The formation of all memories require morphological changes of synapses: new ones must be formed or old ones strengthened. These changes are thought to reflect the underlying cellular basis for persistent memories. Considerable advances have occurred over the last decade in our understanding of the molecular bases of how these memories are formed. A key regulator of synaptic plasticity is a signaling pathway that includes the mitogen

Cryogenic MEMS Pressure Sensor, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A directly immersible cryogenic MEMS pressure sensor will be developed. Each silicon die will contain a vacuum-reference and a tent-like membrane. Offsetting thermal...

Capacitance densitometer for flow regime identification