Micromachined high-performance RF passives in CMOS substrate

International Nuclear Information System (INIS)

Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

2016-01-01

This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

Integrated 60GHz RF beamforming in CMOS

CERN Document Server

Yu, Yikun; van Roermund, Arthur H M

2011-01-01

""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An integrated CMOS high data rate transceiver for video applications

International Nuclear Information System (INIS)

Liang Yaping; Sun Lingling; Che Dazhi; Liang Cheng

2012-01-01

This paper presents a 5 GHz CMOS radio frequency (RF) transceiver built with 0.18 μm RF-CMOS technology by using a proprietary protocol, which combines the new IEEE 802.11n features such as multiple-in multiple-out (MIMO) technology with other wireless technologies to provide high data rate robust real-time high definition television (HDTV) distribution within a home environment. The RF frequencies cover from 4.9 to 5.9 GHz: the industrial, scientific and medical (ISM) band. Each RF channel bandwidth is 20 MHz. The transceiver utilizes a direct up transmitter and low-IF receiver architecture. A dual-quadrature direct up conversion mixer is used that achieves better than 35 dB image rejection without any on chip calibration. The measurement shows a 6 dB typical receiver noise figure and a better than 33 dB transmitter error vector magnitude (EVM) at −3 dBm output power. (semiconductor integrated circuits)

Design and characterization of downconversion mixers and the on-chip calibration techniques for monolithic direct conversion radio receivers

OpenAIRE

Kivekäs, Kalle

2002-01-01

This thesis consists of eight publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis is focused on the design of downconversion mixers and direct conversion radio receivers for UTRA/FDD WCDMA and GSM standards. The main interest of the work is in the 1-3 GHz frequency range and in the Silicon and Silicon-Germanium BiCMOS technologies. The RF front-end, and especially the mixer, limits the performance of direct conversion ...

A circuit-level analysis of third order intermodulation mechanisms in CMOS mixers using time-invariant power and Volterra series

NARCIS (Netherlands)

Sakian, P.; Mahmoudi, R.; Roermund, van A.H.M.

2011-01-01

An in-depth analysis is performed on the third-order intermodulation distortions (IMD3) in the switching pair of active CMOS mixers. The nonlinear time-varying switching pair is described by a hypothetical circuit composed of a nonlinear time-invariant circuit cascaded with a linear time-varying

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Science.gov (United States)

Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

2018-05-01

This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

A multi-mode multi-band RF receiver front-end for a TD-SCDMA/LTE/LTE-advanced in 0.18-μm CMOS process

International Nuclear Information System (INIS)

Guo Rui; Zhang Haiying

2012-01-01

A fully integrated multi-mode multi-band directed-conversion radio frequency (RF) receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented. The front-end employs direct-conversion design, and consists of two differential tunable low noise amplifiers (LNA), a quadrature mixer, and two intermediate frequency (IF) amplifiers. The two independent tunable LNAs are used to cover all the four frequency bands, achieving sufficient low noise and high gain performance with low power consumption. Switched capacitor arrays perform a resonant frequency point calibration for the LNAs. The two LNAs are combined at the driver stage of the mixer, which employs a folded double balanced Gilbert structure, and utilizes PMOS transistors as local oscillator (LO) switches to reduce flicker noise. The front-end has three gain modes to obtain a higher dynamic range. Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface (SPI) module. The front-end is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm 2 . The measured double-sideband (DSB) noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply. (semiconductor integrated circuits)

Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

Science.gov (United States)

Dogan, Numan S.

2003-01-01

The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

Digitally-assisted analog and RF CMOS circuit design for software-defined radio

CERN Document Server

Okada, Kenichi

2011-01-01

This book describes the state-of-the-art in RF, analog, and mixed-signal circuit design for Software Defined Radio (SDR). It synthesizes for analog/RF circuit designers the most important general design approaches to take advantage of the most recent CMOS technology, which can integrate millions of transistors, as well as several real examples from the most recent research results.

Terahertz radiation mixer

Science.gov (United States)

Wanke, Michael C [Albuquerque, NM; Allen, S James [Santa Barbara, CA; Lee, Mark [Albuquerque, NM

2008-05-20

A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.

Charge-Domain Signal Processing of Direct RF SamplingMixer with Discrete-Time Filters in Bluetooth and GSM Receivers

NARCIS (Netherlands)

Ho, Y.C.; Staszewski, R.B.; Muhammad, K.; Hung, C.M.; Leipold, D.; Maggio, K.

2006-01-01

RF circuits for multi-GHz frequencies have recently migrated to low-cost digital deep-submicron CMOS processes. Unfortunately, this process environment, which is optimized only for digital logic and SRAM memory, is extremely unfriendly for conventional analog and RF designs. We present fundamental

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

NARCIS (Netherlands)

Tilmans, H.A.C.; Ziad, H.; Jansen, Henricus V.; Di Monaco, O.; Jourdain, A.; De Raedt, W.; Rottenberg, X.; De Backer, E.; Decoussernaeker, A.; Baert, K.

2001-01-01

Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as

A 3.1-4.8 GHz CMOS receiver for MB-OFDM UWB

International Nuclear Information System (INIS)

Yang Guang; Yao Wang; Yin Jiangwei; Zheng Renliang; Li Wei; Li Ning; Ren Junyan

2009-01-01

An integrated fully differential ultra-wideband CMOS receiver for 3.1-4.8 GHz MB-OFDM systems is presented. A gain controllable low noise amplifier and a merged quadrature mixer are integrated as the RF front-end. Five order Gm-C type low pass filters and VGAs are also integrated for both I and Q IF paths in the receiver. The ESD protected chip is fabricated in a Jazz 0.18 μm RF CMOS process and achieves a maximum total voltage gain of 65 dB, an AGC range of 45 dB with about 6 dB/step, an averaged total noise figure of 6.4 to 8.8 dB over 3 bands and an in-band IIP3 of -5.1 dBm. The receiver occupies 2.3 mm 2 and consumes 110 mA from a 1.8 V supply including test buffers and a digital module.

A 3.1-4.8 GHz CMOS receiver for MB-OFDM UWB

Energy Technology Data Exchange (ETDEWEB)

Yang Guang; Yao Wang; Yin Jiangwei; Zheng Renliang; Li Wei; Li Ning; Ren Junyan, E-mail: w-li@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2009-01-15

An integrated fully differential ultra-wideband CMOS receiver for 3.1-4.8 GHz MB-OFDM systems is presented. A gain controllable low noise amplifier and a merged quadrature mixer are integrated as the RF front-end. Five order Gm-C type low pass filters and VGAs are also integrated for both I and Q IF paths in the receiver. The ESD protected chip is fabricated in a Jazz 0.18 mum RF CMOS process and achieves a maximum total voltage gain of 65 dB, an AGC range of 45 dB with about 6 dB/step, an averaged total noise figure of 6.4 to 8.8 dB over 3 bands and an in-band IIP3 of -5.1 dBm. The receiver occupies 2.3 mm{sup 2} and consumes 110 mA from a 1.8 V supply including test buffers and a digital module.

A differential low-voltage high gain current-mode integrated RF receiver front-end

Energy Technology Data Exchange (ETDEWEB)

Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

2011-02-15

A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

A wideband large dynamic range and high linearity RF front-end for U-band mobile DTV

International Nuclear Information System (INIS)

Liu Rongjiang; Liu Shengyou; Guo Guiliang; Cheng Xu; Yan Yuepeng

2013-01-01

A wideband large dynamic range and high linearity U-band RF front-end for mobile DTV is introduced, and includes a noise-cancelling low-noise amplifier (LNA), an RF programmable gain amplifier (RFPGA) and a current communicating passive mixer. The noise/distortion cancelling structure and RC post-distortion compensation are employed to improve the linearity of the LNA. An RFPGA with five stages provides large dynamic range and fine gain resolution. A simple resistor voltage network in the passive mixer decreases the gate bias voltage of the mixing transistor, and optimum linearity and symmetrical mixing is obtained at the same time. The RF front-end is implemented in a 0.25 μm CMOS process. Tests show that it achieves an IIP3 (third-order intercept point) of −17 dBm, a conversion gain of 39 dB, and a noise figure of 5.8 dB. The RFPGA achieves a dynamic range of −36.2 to 23.5 dB with a resolution of 0.32 dB. (semiconductor integrated circuits)

A flicker noise/IM3 cancellation technique for active mixer using negative impedance

NARCIS (Netherlands)

Cheng, W.; Annema, Anne J.; Wienk, Gerhardus J.M.; Nauta, Bram

2013-01-01

Abstract—This paper presents an approach to simultaneously cancel flicker noise and IM3 in Gilbert-type mixers, utilizing negative impedances. For proof of concept, two prototype double-balanced mixers in 0.16- m CMOS are fabricated. The first demonstration mixer chip was optimized for full IM3

An I/Q mixer with an integrated differential quadrature all-pass filter for on-chip quadrature LO signal generation

International Nuclear Information System (INIS)

Amin, Najam Muhammad; Wang Zhigong; Li Zhiqun

2015-01-01

A down-conversion in-phase/quadrature (I/Q) mixer employing a folded-type topology, integrated with a passive differential quadrature all-pass filter (D-QAF), in order to realize the final down-conversion stage of a 60 GHz receiver architecture is presented in this work. Instead of employing conventional quadrature generation techniques such as a polyphase filter or a frequency divider for the local oscillator (LO) of the mixer, a passive D-QAF structure is employed. Fabricated in a 65 nm CMOS process, the mixer exhibits a voltage gain of 7–8 dB in an intermediate frequency (IF) band ranging from 10 MHz–1.75 GHz. A fixed LO frequency of 12 GHz is used to down-convert a radio frequency (RF) band of 10.25–13.75 GHz. The mixer displays a third order input referred intercept point (IIP 3 ) ranging from −8.75 to −7.37 dBm for a fixed IF frequency of 10 MHz and a minimum single-sideband noise figure (SSB-NF) of 11.3 dB. The mixer draws a current of 6 mA from a 1.2 V supply voltage dissipating a power of 7.2 mW. (paper)

Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

Directory of Open Access Journals (Sweden)

Zhen Li

2015-09-01

Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

Design of a CMOS integrated on-chip oscilloscope for spin wave characterization

Directory of Open Access Journals (Sweden)

Eugen Egel

2017-05-01

Full Text Available Spin waves can perform some optically-inspired computing algorithms, e.g. the Fourier transform, directly than it is done with the CMOS logic. This article describes a new approach for on-chip characterization of spin wave based devices. The readout circuitry for the spin waves is simulated with 65-nm CMOS technology models. Commonly used circuits for Radio Frequency (RF receivers are implemented to detect a sinusoidal ultra-wideband (5-50 GHz signal with an amplitude of at least 15 μV picked up by a loop antenna. First, the RF signal is amplified by a Low Noise Amplifier (LNA. Then, it is down-converted by a mixer to Intermediate Frequency (IF. Finally, an Operational Amplifier (OpAmp brings the IF signal to higher voltages (50-300 mV. The estimated power consumption and the required area of the readout circuit is approximately 55.5 mW and 0.168 mm2, respectively. The proposed On-Chip Oscilloscope (OCO is highly suitable for on-chip spin wave characterization regarding the frequency, amplitude change and phase information. It offers an integrated low power alternative to current spin wave detecting systems.

CMOS Silicon-on-Sapphire RF Tunable Matching Networks

Directory of Open Access Journals (Sweden)

Chamseddine Ahmad

2006-01-01

Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

Superconducting terahertz mixer using a transition-edge microbolometer

Science.gov (United States)

Prober, D. E.

1993-01-01

We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and an RF signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid (less than 0.1 ns) outdiffusion of hot electrons occurs. This gives large intermediate frequency (IF) response. The mixer offers about 4 GHz IF bandwidth, about 80 ohm RF resistive impedance, good match to the IF amplifier, and requires only 1-20 nW of local oscillator power. The upper RF frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is 1/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 Tc, respectively.

基于DLL的RF CMOS振荡器中电荷泵电流源失配%Current Mismatches in Charge Pumps of DLL-Based RF CMOS Oscillators

Institute of Scientific and Technical Information of China (English)

无

2001-01-01

研究了电荷泵中电流源失配造成的假频分量,推导出了一个用于计算假频分量的公式.提供了两个数表用于直观了解参数改变时假频变化情况.最后对设计基于DLL的RF CMOS振荡器提供了一些参考方法.%A research on the spurious tones due to the current mismatch in charge pumps of DLL (Delay Locked Loop) -based RF CMOS oscillators is performed. An equation for strength evaluation of the spurious tones is derived. Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters. Some suggestions are given for the design of a DLL-based RF CMOS oscillators.

An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

2017-01-01

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

Noise-Induced Synchronization among Sub-RF CMOS Analog Oscillators for Skew-Free Clock Distribution

Science.gov (United States)

Utagawa, Akira; Asai, Tetsuya; Hirose, Tetsuya; Amemiya, Yoshihito

We present on-chip oscillator arrays synchronized by random noises, aiming at skew-free clock distribution on synchronous digital systems. Nakao et al. recently reported that independent neural oscillators can be synchronized by applying temporal random impulses to the oscillators [1], [2]. We regard neural oscillators as independent clock sources on LSIs; i. e., clock sources are distributed on LSIs, and they are forced to synchronize through the use of random noises. We designed neuron-based clock generators operating at sub-RF region (CMOS implementation with 0.25-μm CMOS parameters. Through circuit simulations, we demonstrate that i) the clock generators are certainly synchronized by pseudo-random noises and ii) clock generators exhibited phase-locked oscillations even if they had small device mismatches.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

Energy Technology Data Exchange (ETDEWEB)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

2009-06-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

International Nuclear Information System (INIS)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

2009-01-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

RF Measurement Concepts

CERN Document Server

Caspers, F

2014-01-01

For the characterization of components, systems and signals in the radiofrequency (RF) and microwave ranges, several dedicated instruments are in use. In this article the fundamentals of the RF signal techniques are discussed. The key element in these front ends is the Schottky diode which can be used either as a RF mixer or as a single sampler. The spectrum analyser has become an absolutely indispensable tool for RF signal analysis. Here the front end is the RF mixer as the RF section of modern spectrum analyses has a ra ther complex architecture. The reasons for this complexity and certain working principles as well as limitations are discussed. In addition, an overview of the development of scalar and vector signal analysers is given. For the determination of the noise temperature of a one-port and the noise figure of a two-port, basic concepts and relations are shown as well as a brief discussion of commonly used noise-measurement techniques. In a further part of this article the operating principles of n...

Substrate Effects in Wideband SiGe HBT Mixer Circuits

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2005-01-01

are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

A novel compact model for on-chip stacked transformers in RF-CMOS technology

Science.gov (United States)

Jun, Liu; Jincai, Wen; Qian, Zhao; Lingling, Sun

2013-08-01

A novel compact model for on-chip stacked transformers is presented. The proposed model topology gives a clear distinction to the eddy current, resistive and capacitive losses of the primary and secondary coils in the substrate. A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided. The model is further verified by the excellent match between the measured and simulated S -parameters on the extracted parameters for a 1 : 1 stacked transformer manufactured in a commercial RF-CMOS technology.

Design of a 40-nm CMOS integrated on-chip oscilloscope for 5-50 GHz spin wave characterization

Science.gov (United States)

Egel, Eugen; Csaba, György; Dietz, Andreas; Breitkreutz-von Gamm, Stephan; Russer, Johannes; Russer, Peter; Kreupl, Franz; Becherer, Markus

2018-05-01

Spin wave (SW) devices are receiving growing attention in research as a strong candidate for low power applications in the beyond-CMOS era. All SW applications would require an efficient, low power, on-chip read-out circuitry. Thus, we provide a concept for an on-chip oscilloscope (OCO) allowing parallel detection of the SWs at different frequencies. The readout system is designed in 40-nm CMOS technology and is capable of SW device characterization. First, the SWs are picked up by near field loop antennas, placed below yttrium iron garnet (YIG) film, and amplified by a low noise amplifier (LNA). Second, a mixer down-converts the radio frequency (RF) signal of 5 - 50 GHz to lower intermediate frequencies (IF) around 10 - 50 MHz. Finally, the IF signal can be digitized and analyzed regarding the frequency, amplitude and phase variation of the SWs. The power consumption and chip area of the whole OCO are estimated to 166.4 mW and 1.31 mm2, respectively.

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

470‐MHz–698‐MHz IEEE 802.15.4m Compliant RF CMOS Transceiver

Directory of Open Access Journals (Sweden)

Youngho Seo

2018-04-01

Full Text Available This paper proposes an IEEE 802.15.4m compliant TV white‐space orthogonal frequency‐division multiplexing (TVWS‐(OFDM radio frequency (RF transceiver that can be adopted in advanced metering infrastructures, universal remote controllers, smart factories, consumer electronics, and other areas. The proposed TVWS‐OFDM RF transceiver consists of a receiver, a transmitter, a 25% duty‐cycle local oscillator generator, and a delta‐sigma fractional‐N phase‐locked loop. In the TV band from 470 MHz to 698 MHz, the highly linear RF transmitter protects the occupied TV signals, and the high‐Q filtering RF receiver is tolerable to in‐band interferers as strong as −20 dBm at a 3‐MHz offset. The proposed TVWS‐OFDM RF transceiver is fabricated using a 0.13‐μm CMOS process, and consumes 47 mA in the Tx mode and 35 mA in the Rx mode. The fabricated chip shows a Tx average power of 0 dBm with an error‐vector‐magnitude of  3%, and a sensitivity level of −103 dBm with a packet‐error‐rate of 3%. Using the implemented TVWS‐OFDM modules, a public demonstration of electricity metering was successfully carried out.

A 900 MHz RF energy harvesting system in 40 nm CMOS technology with efficiency peaking at 47% and higher than 30% over a 22dB wide input power range

NARCIS (Netherlands)

Wang, J.; Jiang, Y.; Dijkhuis, J.; Dolmans, G.; Gao, H.; Baltus, P.G.M.

2017-01-01

A 900 MHz RF energy harvesting system is proposed for a far-field wireless power transfer application. The topology of a single-stage CMOS rectifier loaded with an integrated boost DC-DC converter is implemented in a 40 nm CMOS technology. The co-design of a cross-coupled CMOS rectifier and an

RF measurements I: signal receiving techniques

CERN Document Server

Caspers, F

2011-01-01

For the characterization of components, systems and signals in the RF and microwave range, several dedicated instruments are in use. In this paper the fundamentals of the RF-signal sampling technique, which has found widespread applications in 'digital' oscilloscopes and sampling scopes, are discussed. The key element in these front-ends is the Schottky diode which can be used either as an RF mixer or as a single sampler. The spectrum analyser has become an absolutely indispensable tool for RF signal analysis. Here the front-end is the RF mixer as the RF section of modern spectrum analysers has a rather complex architecture. The reasons for this complexity and certain working principles as well as limitations are discussed. In addition, an overview of the development of scalar and vector signal analysers is given. For the determination of the noise temperature of a one-port and the noise figure of a two-port, basic concepts and relations are shown. A brief discussion of commonly used noise measurement techniq...

Planar Submillimeter-Wave Mixer Technology with Integrated Antenna

Science.gov (United States)

Chattopadhyay, Gautam; Mehdi, Imran; Gill, John J.; Lee, Choonsup; lombart, Muria L.; Thomas, Betrand

2010-01-01

High-performance mixers at terahertz frequencies require good matching between the coupling circuits such as antennas and local oscillators and the diode embedding impedance. With the availability of amplifiers at submillimeter wavelengths and the need to have multi-pixel imagers and cameras, planar mixer architecture is required to have an integrated system. An integrated mixer with planar antenna provides a compact and optimized design at terahertz frequencies. Moreover, it leads to a planar architecture that enables efficient interconnect with submillimeter-wave amplifiers. In this architecture, a planar slot antenna is designed on a thin gallium arsenide (GaAs) membrane in such a way that the beam on either side of the membrane is symmetric and has good beam profile with high coupling efficiency. A coplanar waveguide (CPW) coupled Schottky diode mixer is designed and integrated with the antenna. In this architecture, the local oscillator (LO) is coupled through one side of the antenna and the RF from the other side, without requiring any beam sp litters or diplexers. The intermediate frequency (IF) comes out on a 50-ohm CPW line at the edge of the mixer chip, which can be wire-bonded to external circuits. This unique terahertz mixer has an integrated single planar antenna for coupling both the radio frequency (RF) input and LO injection without any diplexer or beamsplitters. The design utilizes novel planar slot antenna architecture on a 3- mthick GaAs membrane. This work is required to enable future multi-pixel terahertz receivers for astrophysics missions, and lightweight and compact receivers for planetary missions to the outer planets in our solar system. Also, this technology can be used in tera hertz radar imaging applications as well as for testing of quantum cascade lasers (QCLs).

The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

NARCIS (Netherlands)

Blaakmeer, S.C.; Klumperink, Eric A.M.; Leenaerts, Domine M.W.; Nauta, Bram

2008-01-01

Abstract—This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a

High linearity current communicating passive mixer employing a simple resistor bias

International Nuclear Information System (INIS)

Liu Rongjiang; Guo Guiliang; Yan Yuepeng

2013-01-01

A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB. (semiconductor integrated circuits)

5.2-GHz RF Power Harvester in 0.18-/spl mu/m CMOS for Implantable Intraocular Pressure Monitoring

KAUST Repository

Ouda, Mahmoud H.

2013-04-17

A first fully integrated 5.2-GHz CMOS-based RF power harvester with an on-chip antenna is presented in this paper. The design is optimized for sensors implanted inside the eye to wirelessly monitor the intraocular pressure of glaucoma patients. It includes a five-stage RF rectifier with an on-chip antenna, a dc voltage limiter, two voltage sensors, a low dropout voltage regulator, and MOSCAP based on-chip storage. The chip has been designed and fabricated in a standard 0.18-μm CMOS technology. To emulate the eye environment in measurements, a custom test setup is developed that comprises Plexiglass cavities filled with saline solution. Measurements in this setup show that the proposed chip can be charged to 1 V wirelessly from a 5-W transmitter 3 cm away from the harvester chip. The energy that is stored on the 5-nF on-chip MOSCAP when charged to 1 V is 2.5 nJ, which is sufficient to drive an arbitrary 100-μW load for 9 μs at regulated 0.8 V. Simulated efficiency of the rectifier is 42% at -7 dBm of input power.

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

Science.gov (United States)

Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta;

A low power 3-5 GHz CMOS UWB receiver front-end

International Nuclear Information System (INIS)

Li Weinan; Huang Yumei; Hong Zhiliang

2009-01-01

A novel low power RF receiver front-end for 3-5 GHz UWB is presented. Designed in the 0.13 μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below -8.5 dB across the 3.1-4.7 GHz frequency range, maximum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of -11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 x 1.5 mm 2 .

Single-Chip Fully Integrated Direct-Modulation CMOS RF Transmitters for Short-Range Wireless Applications

Directory of Open Access Journals (Sweden)

M. Jamal Deen

2013-08-01

Full Text Available Ultra-low power radio frequency (RF transceivers used in short-range application such as wireless sensor networks (WSNs require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs in addition to a 2.0 GHz phase-locked loop (PLL based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of −122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of −120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2008-01-01

The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

Analysis and design of a high-linearity receiver RF front-end with an improved 25%-duty-cycle LO generator for WCDMA/GSM applications

International Nuclear Information System (INIS)

Hu Song; Li Weinan; Huang Yumei; Hong Zhiliang

2012-01-01

A fully integrated receiver RF front-end that meets WCDMA/GSM system requirements is presented. It supports SAW-less operation for WCDMA. To improve the linearity in terms of both IP3 and IP2, the RF front-end is comprised of multiple-gated LNAs with capacitive desensitization, current-mode passive mixers with the proposed IP2 calibration circuit and reconfigurable Tow-Thomas-like biquad TIAs. A new power-saving multi-mode divider with low phase noise is proposed to provide the 4-phase 25%-duty-cycle LO. In addition, a constant-g m biasing with a non-chip resistor is adopted to make the conversion gain invulnerable to the process and temperature variations of the transimpedance. This RF front-end is integrated in a receiver with an on-chip frequency synthesizer in 0.13 μm CMOS. The measurement results show that owing to this high-linearity RF front-end, the receiver achieves −6 dBm IIP3 and better than +60 dBm IIP2 for all modes and bands. (semiconductor integrated circuits)

Single-chip RF communications systems in CMOS

DEFF Research Database (Denmark)

Olesen, Ole

1997-01-01

The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

Quasi-optical antenna-mixer-array design for terahertz frequencies

Science.gov (United States)

Guo, Yong; Potter, Kent A.; Rutledge, David B.

1992-01-01

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Theory, analysis and design of RF interferometric sensors

CERN Document Server

Nguyen, Cam

2012-01-01

Theory, Analysis and Design of RF Interferometric Sensors presents the theory, analysis and design of RF interferometric sensors. RF interferometric sensors are attractive for various sensing applications that require every fine resolution and accuracy as well as fast speed. The book also presents two millimeter-wave interferometric sensors realized using RF integrated circuits. The developed millimeter-wave homodyne sensor shows sub-millimeter resolution in the order of 0.05 mm without correction for the non-linear phase response of the sensor's quadrature mixer. The designed millimeter-wave double-channel homodyne sensor provides a resolution of only 0.01 mm, or 1/840th of the operating wavelength, and can inherently suppress the non-linearity of the sensor's quadrature mixer. The experimental results of displacement and velocity measurement are presented as a way to demonstrate the sensing ability of the RF interferometry and to illustrate its many possible applications in sensing. The book is succinct, ye...

Hot-electron bolometer terahertz mixers for the Herschel Space Observatory.

Science.gov (United States)

Cherednichenko, Sergey; Drakinskiy, Vladimir; Berg, Therese; Khosropanah, Pourya; Kollberg, Erik

2008-03-01

We report on low noise terahertz mixers (1.4-1.9 THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5 to 2.5 THz, with 30 GHz resolution) and also by measuring the mixer noise temperature at a limited number of discrete frequencies. The lowest mixer noise temperature recorded was 750 K [double sideband (DSB)] at 1.6 THz and 950 K DSB at 1.9 THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4-4.8 GHz, the mixer noise temperature was 1100 K DSB at 1.6 THz and 1450 K DSB at 1.9 THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200-500 nW range.

HYBRID SILICON-ON-SAPPHIRE/SCALED CMOS INTERFERENCE MITIGATION FRONT END BASED ON SIMULTANEOUS NOISE CANCELLATION, ACTIVE-INTERFERENCE CANCELLATION AND N-PATH-MIXER FILTERING

Science.gov (United States)

2017-04-01

supported under the RF focal plane gate array (FPGA) program, SOS CMOS in conjunction with series stacking of devices is exploited to enable...OOB IIP3 of +7 and +17.5dBm respectively. The clock path direct current (DC) power consumption at 700MHz is 90mW from a 1.2V supply. The proposed...the circulator architecture to enhance the TX-RX isolation and track ANT variations. These innovations (i) lower the overall power consumption due

Beyond CMOS nanodevices 1

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

Beyond CMOS nanodevices 2

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Simplified unified analysis of switched-RC passive mixers, samplers, and N -Path filters using the adjoint network

NARCIS (Netherlands)

Pavan, Shanthi; Klumperink, Eric A.M.

2017-01-01

Recent innovations in software defined CMOS radio transceiver architectures heavily rely on high linearity switched-RC sampler and passive-mixer circuits, driven by digitally programmable multiphase clocks. Although seemingly simple, the frequency domain analysis of these linear periodically time

A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

KAUST Repository

Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

2018-01-01

This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

KAUST Repository

Almansouri, Abdullah Saud Mohammed

2018-01-09

This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.

Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

KAUST Repository

Chandran, Akhil A.

2016-09-15

Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator\\'s nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli\\'s beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

Multi frequency excited MEMS cantilever beam resonator for Mixer-Filter applications

KAUST Repository

Chandran, Akhil A.; Younis, Mohammad I.

2016-01-01

Wireless communication uses Radio Frequency waves to transfer information from one point to another. The modern RF front end devices are implementing MEMS in their designs so as to exploit the inherent properties of MEMS devices, such as its low mass, low power consumption, and small size. Among the components in the RF transceivers, band pass filters and mixers play a vital role in achieving the optimum RF performance. And this paper aims at utilizing an electrostatically actuated micro cantilever beam resonator's nonlinear frequency mixing property to realize a Mixer-Filter configuration through multi-frequency excitation. The paper studies about the statics and dynamics of the device. Simulations are carried out to study the added benefits of multi frequency excitation. The modelling of the cantilever beam has been done using a Reduced Order Model of the Euler-Bernoulli's beam equation by implementing the Galerkin discretization. The device is shown to be able to down-convert signals from 960 MHz of frequency to an intermediate frequency around 50 MHz and 70 MHz in Phase 1 and 2, respectively. The simulation showed promising results to take the project to the next level. © 2016 IEEE.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

Integrated X-band FMCW front-end in SiGe BiCMOS

NARCIS (Netherlands)

Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

2010-01-01

An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the

Linear CMOS RF power amplifiers a complete design workflow

CERN Document Server

Ruiz, Hector Solar

2013-01-01

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

Design of a ×4 subharmonic sub-millimeter wave diode mixer, based on an analytic expression for small-signal conversion admittance parameters

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Krozer, Viktor

2013-01-01

Instead of using frequency multipliers before a fundamental mixer, subharmonic mixers can be used. In order to develop novel subharmonic mixer architectures it is necessary to know the exact signal phase at the nonlinear element. The purpose of this paper is to generalize the description of the s....... With an RF frequency of 640 GHz, this design achieves a conversion gain of −13.5 dB with a LO-power of only −2.5 dBm....

Technology CAD for germanium CMOS circuit

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

2006-12-15

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

Technology CAD for germanium CMOS circuit

International Nuclear Information System (INIS)

Saha, A.R.; Maiti, C.K.

2006-01-01

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

Hydrodynamic studies in a mixer of mixer settler system

International Nuclear Information System (INIS)

Shenoy, K.T.; Ghosh, S.K.; Keni, V.S.

1994-01-01

Pump-mix mixer settlers, with high throughput, are widely used in hydrometallurgical processing for recovery of uranium, copper etc. by solvent extraction. Detailed knowledge of hydrometallurgic behaviour in the mixer and settler is necessary for design. The paper presents the experimental study carried out on mixer hydrodynamics. The work was carried out on 40 litre, cubical, continuous flow mixer with bottom inlet and top discharge. The impeller was top shrouded turbine and working medium was water. Parameters such as impeller diameter, impeller clearance, inlet orifice size, impeller speed and flow rate were studied for effect on pumping head developed and power consumed by the mixer. Data are presented in the terms of dimensionless groups. Importance of the design variables is discussed. (author)

Hydrodynamic studies in a mixer of mixer settler system

Energy Technology Data Exchange (ETDEWEB)

Shenoy, K T; Ghosh, S K; Keni, V S [Chemical Engineering Division, Bhabha Atomic Research Centre, Mumbai (India)

1994-06-01

Pump-mix mixer settlers, with high throughput, are widely used in hydrometallurgical processing for recovery of uranium, copper etc. by solvent extraction. Detailed knowledge of hydrometallurgic behaviour in the mixer and settler is necessary for design. The paper presents the experimental study carried out on mixer hydrodynamics. The work was carried out on 40 litre, cubical, continuous flow mixer with bottom inlet and top discharge. The impeller was top shrouded turbine and working medium was water. Parameters such as impeller diameter, impeller clearance, inlet orifice size, impeller speed and flow rate were studied for effect on pumping head developed and power consumed by the mixer. Data are presented in the terms of dimensionless groups. Importance of the design variables is discussed. (author). 2 refs., 7 figs., 2 tabs.

Numerical simulation of experimental data from planar SIS mixers with integrated tuning elements

International Nuclear Information System (INIS)

Mears, C.A.; Hu, Qing; Richards, P.L.

1988-08-01

We have used the full Tucker theory including the quantum susceptance to fit data from planar lithographed mm-wave mixers with bow tie antennas and integrated RF coupling elements. Essentially perfect fits to pumped IV curves have been obtained. The deduced imbedding admittances agree well with those independently calculated from the geometry of the antenna and matching structures. We find that the quantum susceptance is essential to the fit and thus to predictions of the mixer performance. For junctions with moderately sharp gap structures, the quantum susceptance is especially important in the production of steps with low and/or negative dynamic conductance. 15 refs., 4 figs

Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

NARCIS (Netherlands)

Acar, M.

2011-01-01

In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

A 6-9 GHz 5-band CMOS synthesizer for MB-OFDM UWB

International Nuclear Information System (INIS)

Chen Pufeng; Li Zhiqiang; Wang Xiaosong; Zhang Haiying; Ye Tianchun

2010-01-01

An ultra-wideband frequency synthesizer is designed to generate carrier frequencies for 5 bands distributed from 6 to 9 GHz with less than 3 ns switching time. It incorporates two phase-locked loops and one single-sideband (SSB) mixer. A 2-to-1 multiplexer with high linearity is proposed. A modified wideband SSB mixer, quadrature VCO, and layout techniques are also employed. The synthesizer is fabricated in a 0.18 μm CMOS process and operates at 1.5-1.8 V while consuming 40 mA current. The measured phase noise is -128 dBc/Hz at 10 MHz offset, and the sideband rejection is -22 dBc at 7.656 GHz.

A 6-9 GHz 5-band CMOS synthesizer for MB-OFDM UWB

Energy Technology Data Exchange (ETDEWEB)

Chen Pufeng; Li Zhiqiang; Wang Xiaosong; Zhang Haiying; Ye Tianchun, E-mail: chenpufeng@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

2010-07-15

An ultra-wideband frequency synthesizer is designed to generate carrier frequencies for 5 bands distributed from 6 to 9 GHz with less than 3 ns switching time. It incorporates two phase-locked loops and one single-sideband (SSB) mixer. A 2-to-1 multiplexer with high linearity is proposed. A modified wideband SSB mixer, quadrature VCO, and layout techniques are also employed. The synthesizer is fabricated in a 0.18 {mu}m CMOS process and operates at 1.5-1.8 V while consuming 40 mA current. The measured phase noise is -128 dBc/Hz at 10 MHz offset, and the sideband rejection is -22 dBc at 7.656 GHz.

Photonics-Based Microwave Image-Reject Mixer

Directory of Open Access Journals (Sweden)

Dan Zhu

2018-03-01

Full Text Available Recent developments in photonics-based microwave image-reject mixers (IRMs are reviewed with an emphasis on the pre-filtering method, which applies an optical or electrical filter to remove the undesired image, and the phase cancellation method, which is realized by introducing an additional phase to the converted image and cancelling it through coherent combination without phase shift. Applications of photonics-based microwave IRM in electronic warfare, radar systems and satellite payloads are described. The inherent challenges of implementing photonics-based microwave IRM to meet specific requirements of the radio frequency (RF system are discussed. Developmental trends of the photonics-based microwave IRM are also discussed.

A 24 GHz CMOS oscillator transmitter with an inkjet printed on-chip antenna

KAUST Repository

Ghaffar, Farhan A.

2016-08-15

CMOS based RF circuits have demonstrated efficient performance over the decades. However, one bottle neck with this technology is its lossy nature for passive components such as inductors, antennas etc. Due to this drawback, passives are either implemented off chip or the designers work with the inefficient passives. This problem can be alleviated by using inkjet printing as a post process on CMOS chip. In this work, we demonstrate inkjet printing of a patterned polymer (SU8) layer on a 24 GHz oscillator chip to isolate the lossy Si substrate from the passives which are inkjet printed on top of the SU8 layer. As a proof of concept, a monopole antenna is printed on top of the SU8 layer integrating it with the oscillator through the exposed RF pads to realize an oscillator transmitter. The proposed hybrid fabrication technique can be extended to multiple dielectric and conductive printed layers to demonstrate complete RF systems on CMOS chips which are efficient, cost-effective and above all small in size. © 2016 IEEE.

A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS

International Nuclear Information System (INIS)

Zheng Renliang; Jiang Xudong; Yao Wang; Yang Guang; Yin Jiangwei; Zheng Jianqin; Ren Junyan; Li Wei; Li Ning

2010-01-01

A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented. The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I/Q merged quadrature mixer, a fifth-order Gm-C bi-quad Chebyshev LPF/VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variable-gain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-μm RF CMOS with an area of 6.1 mm 2 and draws a total current of 221 mA from 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step, noise figures of 5.5-8.8 dB for three sub-bands, and an in-band/out-band IIP3 better than -4 dBm/+9 dBm. The transmitter achieves an output power ranging from -10.7 to -3 dBm with gain control, an output P 1dB better than -7.7 dBm, a sideband rejection about 32.4 dBc, and LO suppression of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns. (semiconductor integrated circuits)

Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

DEFF Research Database (Denmark)

Christensen, Kåre Tais

2001-01-01

This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Science.gov (United States)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

High-k Scattering Receiver Mixer Performance for NSTX-U

Science.gov (United States)

Barchfeld, Robert; Riemenschneider, Paul; Domier, Calvin; Luhmann, Neville; Ren, Yang; Kaita, Robert

2016-10-01

The High-k Scattering system detects primarily electron-scale turbulence k θ spectra for studying electron thermal transport in NSTX-U. A 100 mW, 693 GHz probe beam passes through plasma, and scattered power is detected by a 4-pixel quasi optical, mixer array. Remotely controlled receiving optics allows the scattering volume to be located from core to edge with a k θ span of 7 to 40 cm-1. The receiver array features 4 RF diagonal input horns, where the electric field polarization is aligned along the diagonal of a square cross section horn, at 30 mm channel spacing. The local oscillator is provided by a 14.4 GHz source followed by a x48 multiplier chain, giving an intermediate frequency of 1 GHz. The receiver optics receive 4 discreet scattering angles simultaneously, and then focus the signals as 4 parallel signals to their respective horns. A combination of a steerable probe beam, and translating receiver, allows for upward or downward scattering which together can provide information about 2D turbulence wavenumber spectrum. IF signals are digitized and stored for later computer analysis. The performance of the receiver mixers is discussed, along with optical design features to enhance the tuning and performance of the mixers. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

A monolithic 180 nm CMOS dosimeter for In Vivo Dosimetry medical application

International Nuclear Information System (INIS)

Villani, E.G.; Crepaldi, M.; DeMarchi, D.; Gabrielli, A.; Khan, A.; Pikhay, E.; Roizin, Y.; Rosenfeld, A.; Zhang, Z.

2014-01-01

The design and development of a monolithic system-on-chip dosimeter fabricated in a standard 180 nm CMOS technology is described. The device is intended for real time In Vivo measurement of dose of radiation during radiotherapy sessions. Owing to its proposed small size, of approximately 1 mm 3 , such solution could be made in-body implantable and, as such, provide a much-enhanced high-resolution, real-time dose measurement for quality assurance in radiation therapy. The device transmits the related information on dose of radiation wirelessly to an external receiver operating in the MICS band. The various phases of this two years project, started in 2011, including the design and development of radiation sensors and integrated RF to perform the readout, will be described. - Highlights: • A novel monolithic CMOS dosimeter of size of 1 mm 3 has been proposed. • Three different fabrications using a CMOS 180 nm technology have been carried out. • Radiation tests results showed a sensitivity of 1 cGy with accuracy better than 3%. • Preliminary RF tests showed that an RF signal is detectable in free air

All-Digital I/Q RF-DAC

NARCIS (Netherlands)

Alavi, S.M.

2014-01-01

Due to the severe cost pressure of consumer electronics, a migration to an advanced nanoscale CMOS processes, which is primarily developed for fast and low-power digital circuits operating at low supply voltages, is necessary, but it forces wireless RF transceivers to exploit more and more digital

Flashback resistant pre-mixer assembly

Science.gov (United States)

Laster, Walter R [Oviedo, FL; Gambacorta, Domenico [Oviedo, FL

2012-02-14

A pre-mixer assembly associated with a fuel supply system for mixing of air and fuel upstream from a main combustion zone in a gas turbine engine. The pre-mixer assembly includes a swirler assembly disposed about a fuel injector of the fuel supply system and a pre-mixer transition member. The swirler assembly includes a forward end defining an air inlet and an opposed aft end. The pre-mixer transition member has a forward end affixed to the aft end of the swirler assembly and an opposed aft end defining an outlet of the pre-mixer assembly. The aft end of the pre-mixer transition member is spaced from a base plate such that a gap is formed between the aft end of the pre-mixer transition member and the base plate for permitting a flow of purge air therethrough to increase a velocity of the air/fuel mixture exiting the pre-mixer assembly.

A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-{mu}m CMOS

Energy Technology Data Exchange (ETDEWEB)

Zheng Renliang; Jiang Xudong; Yao Wang; Yang Guang; Yin Jiangwei; Zheng Jianqin; Ren Junyan; Li Wei; Li Ning, E-mail: jyren@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2010-06-15

A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented. The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I/Q merged quadrature mixer, a fifth-order Gm-C bi-quad Chebyshev LPF/VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variable-gain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-{mu}m RF CMOS with an area of 6.1 mm{sup 2} and draws a total current of 221 mA from 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step, noise figures of 5.5-8.8 dB for three sub-bands, and an in-band/out-band IIP3 better than -4 dBm/+9 dBm. The transmitter achieves an output power ranging from -10.7 to -3 dBm with gain control, an output P{sub 1dB} better than -7.7 dBm, a sideband rejection about 32.4 dBc, and LO suppression of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns. (semiconductor integrated circuits)

rf beam-current, -phase, and -position monitors

International Nuclear Information System (INIS)

Young, L.

1984-01-01

A prototype rf beam monitor has been tested on the Racetrack Microtron's (RTM) 100 kV injector beam line at the National Bureau of Standards (NBS). This beam monitor is capable of measuring the current, the relative phase, and the position of the beam. The beam is bunched at 2380 MHz for acceleration by the linac in the injector beam line. This train of beam bunches passing through the beam monitor cavities excites the cavities at this resonance frequency of 2380 MHz. Probes in the cavities couple some of the beam-excited rf power out of the cavities. This rf power can be amplified if necessary and then analyzed by a double balanced mixer (DBM). The DBM can also be used as a phase detector. The effective shunt impedance of the cavities was measured with the CW beam. For the position monitor cavity, the shunt impedance is proportional to the displacement from the axis. The measured response of the prototype rf beam current monitor setup is a linear function of beam current. Response of the rf beam-position monitor is also shown

Broadband direct RF digitization receivers

CERN Document Server

Jamin, Olivier

2014-01-01

This book discusses the trade-offs involved in designing direct RF digitization receivers for the radio frequency and digital signal processing domains.  A system-level framework is developed, quantifying the relevant impairments of the signal processing chain, through a comprehensive system-level analysis.  Special focus is given to noise analysis (thermal noise, quantization noise, saturation noise, signal-dependent noise), broadband non-linear distortion analysis, including the impact of the sampling strategy (low-pass, band-pass), analysis of time-interleaved ADC channel mismatches, sampling clock purity and digital channel selection. The system-level framework described is applied to the design of a cable multi-channel RF direct digitization receiver. An optimum RF signal conditioning, and some algorithms (automatic gain control loop, RF front-end amplitude equalization control loop) are used to relax the requirements of a 2.7GHz 11-bit ADC. A two-chip implementation is presented, using BiCMOS and 65nm...

Design of CMOS RFIC ultra-wideband impulse transmitters and receivers

CERN Document Server

Nguyen, Cam

2017-01-01

This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets.  The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of U...

Microwave mixer technology and applications

CERN Document Server

Henderson, Bert

2013-01-01

Although microwave mixers play a critical role in wireless communication and other microwave applications employing frequency conversion circuits, engineers find that most books on this subject emphasize theoretical aspects, rather than practical applications. That's about to change with the forthcoming release of Microwave Mixer Technology and Applications. Based on a review of over one thousand patents on mixers and frequency conversion, authors Bert Henderson and Edmar Camargo have written a comprehensive book for mixer designers who want solid ideas for solving their own design challenges.

Development of Low-Noise Small-Area 24 GHz CMOS Radar Sensor

Directory of Open Access Journals (Sweden)

Min Yoon

2016-01-01

Full Text Available We present a low-noise small-area 24 GHz CMOS radar sensor for automotive collision avoidance. This sensor is based on direct-conversion pulsed-radar architecture. The proposed circuit is implemented using TSMC 0.13 μm RF (radio frequency CMOS (fT/fmax=120/140 GHz technology, and it is powered by a 1.5 V supply. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF are used to reduce parasitic capacitance at the band of 24 GHz. The proposed sensor has low cost and low power dissipation since it is realized using CMOS process. The proposed sensor showed the lowest noise figure of 2.9 dB and the highest conversion gain of 40.2 dB as compared to recently reported research results. It also showed small chip size of 0.56 mm2, low power dissipation of 39.5 mW, and wide operating temperature range of −40 to +125°C.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

MM wave quasioptical SIS mixers

International Nuclear Information System (INIS)

Hu, Qing; Mears, C.A.; Richards, P.L.; Lloyd, F.L.

1988-08-01

We have tested the performance of planar SIS mixers with log-periodic antennas at near millimeter and submillimeter wave frequencies from 90 to 360 GHz. The large ωR/sub N/C product (/approximately/10 at 90 GHz) of our Nb/NbO/sub x//Pb-In-Au junctions requires an integrated inductive tuning element to resonate the junction capacitance at the operating frequencies. We have used two types of integrated tuning element, which were designed with the aid of measurements using a Fourier transform spectrometer. Preliminary results indicate that the tuning elements can give very good mixer performance up to at least 200 GHz. An inductive wire in parallel with a 5-junction array gives a minimum mixer noise temperature of 115K (DSB) at 90 GHz with a FWHM bandwidth of 8 GHz. An open-ended microstrip stub in parallel with a single junction, gives minimum mixer noise temperatures of 150 and 200K (DSB) near 90 and 180 GHz with FWHM bandwidths of 4 and 3 GHz, respectively. The relatively high mixer noise temperatures compared to those of waveguide SIS mixers in a similar frequency range are attributed mainly to the losses in our optical system, which is being improved. 13 refs., 6 figs., 1 tab

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

International Nuclear Information System (INIS)

Manjula, J.; Malarvizhi, S.

2014-01-01

This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. (semiconductor integrated circuits)

Scale-up of the mixer of a mixer-settler model used in a uranium solvent extraction process

International Nuclear Information System (INIS)

Santana, A.O. de; Dantas, C.C.

1995-01-01

Scale-up relations were obtained for the mixer of a box type mixer-settler used in an uranium extraction process from chloridric leaches. Three box type mixers of different sizes and with the same geometry were used for batch and continuous-flow experiments. The correlations between the extraction rate and he specific power input, D/T ratio(=turbine diameter/mixer width) and residence time were experimentally determined. The results showed that the extraction rate increases with the power input at a constant D/T ratio equal to 1/3, remaining however, independent from the mixer size for a specific value of the power input. This behaviour was observed for power input values ranging from 100 to 750 W/m 3 . (author) 8 refs.; 8 figs.; 4 tabs

Analysis of Different Topologies of Inverter in 0.18μm CMOS Technology and its Comparision

OpenAIRE

Ashish Panchal; Rajkumar Gehlot; Nidhi Maheshwari; Prafful Dubey

2011-01-01

In this paper we study inverter topologies under various criteria and caracteristics using Cadence tool.This paper includes analysis of inveter topologies utilized in VLSI that includes CMOS, Pseudo NMOS and Dynamic families. The characteristics include DC transfer characteristics, current Vs voltage characteristics,area and delay. The inverter topologies has been designed in 0.18μm CMOS technology with 1.8V supply voltage. SPECTRA RF simulator is used for circuit simulation. This paper also ...

Low-power analog integrated circuits for wireless ECG acquisition systems.

Science.gov (United States)

Tsai, Tsung-Heng; Hong, Jia-Hua; Wang, Liang-Hung; Lee, Shuenn-Yuh

2012-09-01

This paper presents low-power analog ICs for wireless ECG acquisition systems. Considering the power-efficient communication in the body sensor network, the required low-power analog ICs are developed for a healthcare system through miniaturization and system integration. To acquire the ECG signal, a low-power analog front-end system, including an ECG signal acquisition board, an on-chip low-pass filter, and an on-chip successive-approximation analog-to-digital converter for portable ECG detection devices is presented. A quadrature CMOS voltage-controlled oscillator and a 2.4 GHz direct-conversion transmitter with a power amplifier and upconversion mixer are also developed to transmit the ECG signal through wireless communication. In the receiver, a 2.4 GHz fully integrated CMOS RF front end with a low-noise amplifier, differential power splitter, and quadrature mixer based on current-reused folded architecture is proposed. The circuits have been implemented to meet the specifications of the IEEE 802.15.4 2.4 GHz standard. The low-power ICs of the wireless ECG acquisition systems have been fabricated using a 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) CMOS standard process. The measured results on the human body reveal that ECG signals can be acquired effectively by the proposed low-power analog front-end ICs.

RF Front End Based on MEMS Components for Miniaturized Digital EVA Radio, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In this SBIR project, AlphaSense, Inc. and the Carnegie Mellon University propose to develop a RF receiver front end based on CMOS-MEMS components for miniaturized...

Apparatus for controlled mixing in a high intensity mixer

International Nuclear Information System (INIS)

Crocker, Z.; Gupta, V.P.

1982-01-01

An apparatus and a process is disclosed for controlled mixing of a mixable material in a high intensity mixer. The system enables instantaneous, precise and continual monitoring of a batch in a high intensity mixer which heretofore could not be achieved. The process comprises the steps of feeding a batch of material into a high intensity mixer, agitating the batch in the mixer, monitoring batch temperature separately from mixer temperature and discharging the batch from the mixer when the batch temperature reaches a final predetermined level. The apparatus includes means for monitoring batch temperature in a high intensity mixer separately from mixer temperature, and means responsive to the batch temperature to discharge the batch when the batch temperature reaches a final predetermined level

Vibration mixer

Energy Technology Data Exchange (ETDEWEB)

Alekhin, S.A.; Chernov, V.S.; Denisenko, V.V.; Gorodnyanskiy, I.F.; Prokopov, L.I.; Tikhonov, Yu.P.

1983-01-01

The vibration mixer is proposed which contains a housing, vibration drive with rod installed in the upper part of the mixing mechanism made in the form of a hollow shaft with blades. In order to improve intensity of mixing and dispersion of the mud, the shaft with the blades is arranged on the rod of the vibrator and is equipped with a cam coupling whose drive disc is attached to the vibration rod. The rod is made helical, while the drive disc of the cam coupling is attached to the helical surface of the rod. In addition, the vibration mixer is equipped with perforated discs installed on the ends of the rods.

Topology optimization of microfluidic mixers

DEFF Research Database (Denmark)

Andreasen, Casper Schousboe; Gersborg, Allan Roulund; Sigmund, Ole

2009-01-01

This paper demonstrates the application of the topology optimization method as a general and systematic approach for microfluidic mixer design. The mixing process is modeled as convection dominated transport in low Reynolds number incompressible flow. The mixer performance is maximized by altering...

Pre-design mixer-settler based on phase inversion

International Nuclear Information System (INIS)

Widiatmo, Djarot S.W

1998-01-01

The mixer settler was designed to extract uranium from organic phase by n-Dodecane and to separate heavy metal from liquid waste. The mixer settler was designed to save solvent without reducing the extraction efficiency. Extraction efficiency depend on : two phase dispersion on mixing, the type of droplet formation and completeness phase separation. The mixer settler has three main part i.e. mixer chamber, droplet formation device and phase inversion column. Mixer chamber was operated in laminar mixing, the total flow rate 200 ml.second -1 . The mixer chamber dimensions was 5 cm diameter and 7 cm height. It was completed with paddle mixer 3 cm diameter, 1 cm height and the speed rotation was 300 rpm. The droplet formation device was perforated plate 5 cm diameter with 1 mm holes. Phase Inversion column dimensions was 5 cm diameter and 50 cm height. (author)

Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

CERN Document Server

Kerhervé, Eric

2015-01-01

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

A submillimetre-wave SIS mixer using NbN/MgO/NbN trilayers grown epitaxially on an MgO substrate

CERN Document Server

Uzawa, Y; Saito, A; Takeda, M; Wang, Z

2002-01-01

We have designed, fabricated and tested a quasi-optical superconductor-insulator-superconductor (SIS) mixer employing distributed NbN/MgO/NbN tunnel junctions and NbN/MgO/NbN microstriplines at submillimetre-wave frequencies. These trilayers were fabricated by dc- and rf-magnetron sputtering on an MgO substrate at ambient temperature so that the NbN and MgO films were grown epitaxially. Our SIS mixer consists of an MgO hyperhemispherical lens with an antireflection cap and a self-complementary log-periodic antenna made of a single-crystal NbN film, on which the distributed SIS junctions and the two-section impedance transformers were mirror-symmetrically placed at the feed point of the antenna. As designed, the junctions are 0.6 mu m wide and 15.5 mu m long, which is sufficient to absorb the incoming signal along this lossy transmission line, assuming a current density of 10 kA cm sup - sup 2. The mixer showed good I-V characteristics, with subgap-to-normal resistance ratios of about 13, although weak-link br...

Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

NARCIS (Netherlands)

Vathulay, V.; Sowlati, T.; Leenaerts, D.M.W.

2001-01-01

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit,

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

International Nuclear Information System (INIS)

Li Chen; Liao Huailin; Huang Ru; Wang Yangyuan

2008-01-01

In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications. (cross-disciplinary physics and related areas of science and technology)

Design of a SiGe BiCMOS canceller for low frequency noise reduction in direct conversion receivers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Michaelsen, Rasmus Schandorph

of the local oscillator (LO) toward the RF port of the mixer (Figure 1(a)). This causes the LO self-mixing phenomenon, which is responsible of a significant DC offset at the output of the receiver (Figure 1(b)). In turn, this DC offset gives rise to a high level of low frequency noise affecting the signal...

Mixer Assembly for a Gas Turbine Engine

Science.gov (United States)

Dai, Zhongtao (Inventor); Cohen, Jeffrey M. (Inventor); Fotache, Catalin G. (Inventor); Smith, Lance L. (Inventor); Hautman, Donald J. (Inventor)

2018-01-01

A mixer assembly for a gas turbine engine is provided, including a main mixer with fuel injection holes located between at least one radial swirler and at least one axial swirler, wherein the fuel injected into the main mixer is atomized and dispersed by the air flowing through the radial swirler and the axial swirler.

Realization of THz Band Mixer Using Graphene

Directory of Open Access Journals (Sweden)

E. Ghasemi Mizuji

2014-05-01

Full Text Available In this article a new method for creating mixer component in infrared and THz is suggested. Since the nonlinear property of admittance creates frequency components that do not exist in the input signal and the electrical conductivity is associated with admittance, in our work we have proven and simulated that the nonlinear property of graphene admittance can produce mixer component. The simulation results show that the mixer component is larger than other components, therefore the mixer works properly. Because of nano scale of graphene structure, this method paves the road to achieve super compact circuits.

Observational demonstration of a high image rejection SIS mixer receiver using a new waveguide filter at 230 GHz

Science.gov (United States)

Hasegawa, Yutaka; Asayama, Shinichiro; Harada, Ryohei; Tokuda, Kazuki; Kimura, Kimihiro; Ogawa, Hideo; Onishi, Toshikazu

2017-12-01

A new sideband separation method was developed for use in millimeter-/submillimeter-band radio receivers using a novel waveguide frequency separation filter (FSF), which consists of two branch line hybrid couplers and two waveguide high-pass filters. The FSF was designed to allow the radio frequency (RF) signal to pass through to an output port when the frequency is higher than a certain value (225 GHz), and to reflect the RF signal back to another output port when the frequency is lower. The FSF is connected to two double sideband superconductor-insulator-superconductor (SIS) mixers, and an image rejection ratio (IRR) is determined by the FSF characteristics. With this new sideband separation method, we can achieve good and stable IRR without the balancing two SIS mixers such as is necessary for conventional sideband-separating SIS mixers. To demonstrate the applicability of this method, we designed and developed an FSF for simultaneous observations of the J = 2-1 rotational transition lines of three CO isotopes (12CO, 13CO, and C18O): the 12CO line is in the upper sideband and the others are in the lower sideband with an intermediate-frequency range of 4-8 GHz at the radio frequency of 220/230 GHz. This FSF was then installed in the receiver system of the 1.85 m radio telescope of Osaka Prefecture University, and was used during the 2014 observation season. The observation results indicate that the IRR of the proposed receiver is 25 dB or higher for the 12CO line, and no significant fluctuation larger than 1 dB in the IRR was observed throughout the season. These results demonstrate the practical utility of the FSF receiver for observations like extensive molecular cloud surveys in specified lines with a fixed frequency setting.

Spare mitigation/retrieval mixer pumps

International Nuclear Information System (INIS)

Taylor, S.

1995-01-01

This document presents the functional design criteria for design, analysis, fabrication, testing, and installation of a waste tank mixer pump. The mixer pump will be operated to eliminate the periodic releases of large quantities of flammable gas (e.g., hydrogen) from Hanford Site waste tanks and also to accommodate retrieval of tank waste

A highly sensitive RF-to-DC power converter with an extended dynamic range

KAUST Repository

Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

2017-01-01

This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross

Two-phase LMMHD mixer-development experiments

International Nuclear Information System (INIS)

Fabris, G.; Dunn, P.F.; Chow, J.C.F.

1978-01-01

The results of a series of experiments conducted to evaluate the fluid mechanical performance of various two-phase LMMHD mixer designs are presented. The results from both flow visualization studies of the local two-phase flows downstream from various mixer-element configurations and local measurements performed to characterize these flows are presented. A conceptual LMMHD mixer design is described that insures the generation of small bubbles, prevents the formation of gas slugs and separated regions, and favors the stabilization of a homogeneous foam flow

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

Frequency-Tunable antenna by input-impedance-tunable CMOS RF-Frontend

NARCIS (Netherlands)

Haider, Nadia; Oude Alink, M.S.; Caratelli, Diego; Klumperink, Eric A.M.; Yarovoy, Alexander G.

2013-01-01

Variable-impedance matching between the antenna and the RF-frontend provides several potential advantages, including changing operational frequency, compensating for unintentional mismatch, improving scanning capability, and reducing noise and interference signal levels. In this article a concept of

An RF energy harvesting power management circuit for appropriate duty-cycled operation

Science.gov (United States)

Shirane, Atsushi; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

2015-04-01

In this study, we present an RF energy harvesting power management unit (PMU) for battery-less wireless sensor devices (WSDs). The proposed PMU realizes a duty-cycled operation that is divided into the energy charging time and discharging time. The proposed PMU detects two types of timing, thus, the appropriate timing for the activation can be recognized. The activation of WSDs at the proper timing leads to energy efficient operation and stable wireless communication. The proposed PMU includes a hysteresis comparator (H-CMP) and an RF signal detector (RF-SD) to detect the timings. The proposed RF-SD can operate without the degradation of charge efficiency by reusing the RF energy harvester (RF-EH) and H-CMP. The PMU fabricated in a 180 nm Si CMOS demonstrated the charge operation using the RF signal at 915 MHz and the two types of timing detection with less than 124 nW in the charge phase. Furthermore, in the active phase, the PMU generates a 0.5 V regulated power supply from the charged energy.

An RF Power Amplifier in a Digital CMOS Process

DEFF Research Database (Denmark)

Nielsen, Per Asbeck; Fallesen, Carsten

2002-01-01

A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

A general numerical analysis of the superconducting quasiparticle mixer

Science.gov (United States)

Hicks, R. G.; Feldman, M. J.; Kerr, A. R.

1985-01-01

For very low noise millimeter-wave receivers, the superconductor-insulator-superconductor (SIS) quasiparticle mixer is now competitive with conventional Schottky mixers. Tucker (1979, 1980) has developed a quantum theory of mixing which has provided a basis for the rapid improvement in SIS mixer performance. The present paper is concerned with a general method of numerical analysis for SIS mixers which allows arbitrary terminating impedances for all the harmonic frequencies. This analysis provides an approach for an examination of the range of validity of the three-frequency results of the quantum mixer theory. The new method has been implemented with the aid of a Fortran computer program.

Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers

Science.gov (United States)

Skalare, Anders; McGrath, William; Bumble, Bruce; LeDuc, Henry

2004-01-01

A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.

RF-Frontend Design for Process-Variation-Tolerant Receivers

CERN Document Server

Sakian, Pooyan; van Roermund, Arthur

2012-01-01

This book discusses a number of challenges faced by designers of wireless receivers, given complications caused by the shrinking of electronic and mobile devices circuitry into ever-smaller sizes and the resulting complications on the manufacturability, production yield, and the end price of the products.  The authors describe the impact of process technology on the performance of the end product and equip RF designers with countermeasures to cope with such problems.  The mechanisms by which these problems arise are analyzed in detail and novel solutions are provided, including design guidelines for receivers with robustness to process variations and details of circuit blocks that obtain the required performance level. Describes RF receiver frontends and their building blocks from a system- and circuit-level perspective; Provides system-level analysis of a generic RF receiver frontend with robustness to process variations; Includes details of CMOS circuit design at 60GHz and reconfigurable circuits at 60GHz...

CMOS circuits manual

CERN Document Server

Marston, R M

1995-01-01

CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

The Robust Control Mixer Module Method for Control Reconfiguration

DEFF Research Database (Denmark)

Yang, Z.; Blanke, M.

1999-01-01

into a LTI dynamical system, and furthermore multiple dynamical control mixer modules can be employed in our consideration. The H_{\\infty} control theory is used for the analysis and design of the robust control mixer modules. Finally, one practical robot arm system as benchmark is used to test the proposed......The control mixer concept is efficient in improving an ordinary control system into a fault tolerant one, especially for these control systems of which the real-time and on-line redesign of the control laws is very difficult. In order to consider the stability, performance and robustness...... of the reconfigurated system simultaneously, and to deal with a more general controller reconfiguration than the static feedback mechanism by using the control mixer approach, the robust control mixer module method is proposed in this paper. The form of the control mixer module extends from a static gain matrix...

SiGe BiCMOS manufacturing platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

Work plan, AP-102 mixer pump removal and pump replacement

International Nuclear Information System (INIS)

Jimenez, R.F.

1994-01-01

The objective of this work plan is to plan the steps and estimate the costs required to remove the failed AP-102 mixer pump, and to plan and estimate the cost of the necessary design and specification work required to order a new, but modified, mixer pump including the pump and pump pit energy absorbing design. The main hardware required for the removal of the mixer is as follows: a flexible receiver and blast shield; a metal container for the pulled mixer pump; and a trailer and strongback to haul and manipulate the container. Additionally: a gamma scanning device will be needed to detect the radioactivity emanating from the mixer as it is pulled from the tank; a water spray system will be required to remove tank waste from the surface of the mixer as it is pulled from the AP-102 tank; and a lifting yoke to lift the mixer from the pump pit (the SY-101 Mixer Lifting Yoke will be used). A ''green house'' will have to be erected over the AP-102 pump pit and an experienced Hoisting and Rigging crew must be assembled and trained in mixer pump removal methods before the actual removal is undertaken

Low modulation index RF signal detection for a passive UHF RFID transponder

International Nuclear Information System (INIS)

Liu Zhongqi; Zhang Chun; Li Yongming; Wang Zhihua

2009-01-01

In a typical RFID system the reader transmits modulated RF power to provide both data and energy for the passive transponder. Low modulation index RF energy is preferable for an adequate tag power supply and increase in communication range but gives rise to difficulties for near-field conventional demodulation. Therefore, a novel ASK demodulator for minimum 20% modulation index RF signal detection over a range of 23 dB is presented. Thanks to the proposed innovative divisional linear conversion from the power into voltage signal, the detection sensitivity is ensured over a wide power range with low power consumption of 8.6 μW. The chip is implemented in UMC 0.18 μm mix-mode CMOS technology, and the chip area is 0.06 mm 2 .

Investigation on the performance of an optically generated RF local oscillator signal in Ku-band DVB-S systems

NARCIS (Netherlands)

Khan, M.R.H.; Marpaung, D.A.I.; Burla, M.; Roeloffzen, C.G.H.; Bernhardi, Edward; de Ridder, R.M.

2011-01-01

We investigate a way to externally generate the local oscillator (LO) signal used for downconversion of the Ku-band (10.7 − 12.75 GHz) RF signal received from a phased array antenna (PAA). The signal is then translated to an intermediate frequency (950 − 2150 MHz) at the output of the mixer of

Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

Science.gov (United States)

Oukacha, Hassan

The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of

An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

Directory of Open Access Journals (Sweden)

Yu-Chun Liu

2015-08-01

Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

Modeling and Characterization of VCOs with MOS Varactors for RF Transceivers

Directory of Open Access Journals (Sweden)

Siu Chris

2006-01-01

Full Text Available As more broadband wireless standards are introduced and ratified, the complexity of wireless communication systems increases, which necessitates extra care and vigilance in their design. In this paper, various aspects of popular voltage-controlled oscillators (VCOs as key components in RF transceivers are discussed. The importance of phase noise of these key blocks in the overall performance of RF transceivers is highlighted. Varactors are identified as an important component of LC-based oscillators. A new model for accumulation-mode MOS varactors is introduced. The model is experimentally verified through measurements on LC-based VCOs designed in a standard m CMOS process.

Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

2014-01-01

) and the radio frequency (RF) port. A break out of the Marchand balun is measured. This demonstrates good phase and magnitude match of 0.7° and 0.11 dB, respectively. The Marchand baluns are broadband with a measured 3 dB bandwidth of 6.4 GHz, while still having a magnitude imbalance better than 0.4 d...... frequency of 8.5 GHz is −9.8 dB at an LO drive level of 15 dBm. The whole mixer is very broadband with 3 dB bandwidth from 7 to 12 GHz covering the entire X-band. The LO–IF, RF–IF, and RF–LO isolation is better than 46, 36, and 36 dB, respectively, in the entire band of operation.......B and a phase imbalance better than 5°. Unfortunately with a rather high loss of 2.5 dB, mainly due to the low Q-factor of the inductors used. The mixer is optimized for use in doppler radars and is highly linear with a 1 dB compression point above 12 dBm IIP2 of 66 dBm. The conversion gain at the center...

21 CFR 888.4210 - Cement mixer for clinical use.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cement mixer for clinical use. 888.4210 Section... (CONTINUED) MEDICAL DEVICES ORTHOPEDIC DEVICES Surgical Devices § 888.4210 Cement mixer for clinical use. (a) Identification. A cement mixer for clinical use is a device consisting of a container intended for use in mixing...

An ultra-low-power RF transceiver for WBANs in medical applications

Energy Technology Data Exchange (ETDEWEB)

Zhang Qi; Wu Nanjian [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Kuang Xiaofei, E-mail: nanjian@semi.ac.cn [College of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018 (China)

2011-06-15

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 {mu}m CMOS process. Its core area is 1.6 mm{sup 2}. The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 {mu}A current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

An ultra-low-power RF transceiver for WBANs in medical applications

International Nuclear Information System (INIS)

Zhang Qi; Wu Nanjian; Kuang Xiaofei

2011-01-01

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 μm CMOS process. Its core area is 1.6 mm 2 . The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 μA current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

Micro-mixer/combustor

KAUST Repository

Badra, Jihad Ahmad; Masri, Assaad Rachid

2014-01-01

A micro-mixer/combustor to mix fuel and oxidant streams into combustible mixtures where flames resulting from combustion of the mixture can be sustained inside its combustion chamber is provided. The present design is particularly suitable

Scale-up of mixer-settler for uranium extraction

International Nuclear Information System (INIS)

Santana, A.O. de.

1990-05-01

The aim of this work was to obtain scale-up relations for a box type mixer-settler used in uranium extraction process for chloridric leaches. Three box type units with different sizes and with the same geometry were used for scale-up of the mixer. The correlation between extraction rate and specific power input, D/T ratio (stirrer diameter/mixer length) and residence time were experimentally obtained. The results showed that the extraction increases with power input for a constant value of D/T equal to 1/3, remaining however independent from mixer sizes for a specific value of power input. This behavior was observed for power input values ranging from 100 to 750 w/m 9 . (author). 23 refs, 22 figs, 23 tabs

A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system

International Nuclear Information System (INIS)

Zheng Yongzheng; Xia Lingli; Li Weinan; Huang Yumei; Hong Zhiliang

2009-01-01

A fast-hopping 3-band (mode 1) multi-band orthogonal frequency division multiplexing ultra-wideband frequency synthesizer is presented. This synthesizer uses two phase-locked loops for generating steady frequencies and one quadrature single-sideband mixer for frequency shifting and quadrature frequency generation. The generated carriers can hop among 3432 MHz, 3960 MHz, and 4488 MHz. Implemented in a 0.13 μm CMOS process, this fully integrated synthesizer consumes 27 mA current from a 1.2 V supply. Measurement shows that the out-of-band spurious tones are below -50 dBc, while the in-band spurious tones are below -34 dBc. The measured hopping time is below 2 ns. The core die area is 1.0 x 1.8 mm 2 .

A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system

Energy Technology Data Exchange (ETDEWEB)

Zheng Yongzheng; Xia Lingli; Li Weinan; Huang Yumei; Hong Zhiliang, E-mail: yumeihuang@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2009-09-15

A fast-hopping 3-band (mode 1) multi-band orthogonal frequency division multiplexing ultra-wideband frequency synthesizer is presented. This synthesizer uses two phase-locked loops for generating steady frequencies and one quadrature single-sideband mixer for frequency shifting and quadrature frequency generation. The generated carriers can hop among 3432 MHz, 3960 MHz, and 4488 MHz. Implemented in a 0.13 {mu}m CMOS process, this fully integrated synthesizer consumes 27 mA current from a 1.2 V supply. Measurement shows that the out-of-band spurious tones are below -50 dBc, while the in-band spurious tones are below -34 dBc. The measured hopping time is below 2 ns. The core die area is 1.0 x 1.8 mm{sup 2}.

Low modulation index RF signal detection for a passive UHF RFID transponder

Energy Technology Data Exchange (ETDEWEB)

Liu Zhongqi [Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China); Zhang Chun; Li Yongming; Wang Zhihua, E-mail: liu-zq04@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2009-09-15

In a typical RFID system the reader transmits modulated RF power to provide both data and energy for the passive transponder. Low modulation index RF energy is preferable for an adequate tag power supply and increase in communication range but gives rise to difficulties for near-field conventional demodulation. Therefore, a novel ASK demodulator for minimum 20% modulation index RF signal detection over a range of 23 dB is presented. Thanks to the proposed innovative divisional linear conversion from the power into voltage signal, the detection sensitivity is ensured over a wide power range with low power consumption of 8.6 {mu}W. The chip is implemented in UMC 0.18 {mu}m mix-mode CMOS technology, and the chip area is 0.06 mm{sup 2}.

A Low-power CMOS BFSK Transceiver for Health Monitoring Systems.

Science.gov (United States)

Kim, Sungho; Lepkowski, William; Wilk, Seth J; Thornton, Trevor J; Bakkaloglu, Bertan

2011-01-01

A CMOS low-power transceiver for implantable and external health monitoring devices operating in the MICS band is presented. The LNA core has an integrated mixer in a folded configuration to reuse the bias current, allowing high linearity with a low power supply levels. The baseband strip consists of a pseudo differential MOS-C band-pass filter achieving demodulation of 150kHz-offset BFSK signals. An all digital frequency-locked loop is used for LO generation in the RX mode and for driving a class AB power amplifier in the TX mode. The MICS transceiver is designed and fabricated in a 0.18μm 1-poly, 6-metal CMOS process. The sensitivities of -70dBm and -98dBm were achieved with NF of 40dB and 11dB at the data rate of 100kb/s while consuming only 600μW and 1.5mW at 1.2V and 1.8V, respectively. The BERs are less than 10 -3 at the input powers of -70dBm at 1.2V and -98dBm at 1.8V at the data rate of 100kb/s. Finally, the output power of the transmitter is 0dBm for a power consumption of 1.8mW.

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

NARCIS (Netherlands)

Babaie, M.; Kuo, F.W.; Chen, H; Cho, L.C.; Jou, C.P.; Hsueh, F.L.; Shahmohammadi, M.; Staszewski, R.B.

2016-01-01

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

Science.gov (United States)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

Research of UHPC properties prepared with industrial mixer

Science.gov (United States)

Šerelis, E.; Vaitkevičius, V.; Kerševičius, V.

2017-09-01

Ultra-high performance concrete (UHPC) mixture with advanced mechanical and durability properties was created using decent Zyklos ZZ50HE mixer. Zyklos ZZ50HE rotating pan mixer is similar to mixer which has common concrete plants. In experiment UHPC was prepared with Zyklos ZZ50HE mixer and thereafter best composition was selected and prepared with industrial HPGM 1125 mixer. Experiment results revealed that UHPC with W/C=0.29 and advanced mechanical and durability properties can be prepared. In experiment tremendous amount of micro steel fibres (up to 147 kg/m3) were incorporated in UHPC. Concrete with excellent salt scaling resistance and great mechanical properties was obtained. Compressive strength was increased about 30 % from 116 MPa to 150 MPa and flexural strength was increased about 5 times from 6.7 to 36.2 MPa. Salt-scaling resistance at 40 cycles in 3 % NaCl solution varied from 0.006 kg/m2 to 0.197 kg/m2. There were a few attempts to create UHPC and UHPFRC with decent technology, however, unsuccessfully till now. In the world practice this new material is currently used in the construction of bridges and viaducts.

7 CFR 58.228 - Dump hoppers, screens, mixers and conveyors.

Science.gov (United States)

2010-01-01

... Service 1 Equipment and Utensils § 58.228 Dump hoppers, screens, mixers and conveyors. The product contact surfaces of dump hoppers, screens, mixers and conveyors which are used in the process of transferring dry... 7 Agriculture 3 2010-01-01 2010-01-01 false Dump hoppers, screens, mixers and conveyors. 58.228...

Problems of bentonite rebonding of synthetic system sands in turbine mixers

Directory of Open Access Journals (Sweden)

A. Fedoryszyn

2008-12-01

Full Text Available Turbine (rotor mixers are widely used in foundries for bentonite rebonding of synthetic system sands. They form basic equipment in modern sand processing plants. Their major advantage is the short time of the rebond mixing cycle.Until now, no complete theoretical description of the process of mixing in turbine mixers has been offered. Neither does it seem reasonable to try to adapt the theoretical backgrounds of the mixing process carried out in mixers of other types, for example, rooler mixers [1], to the description of operation of the turbine mixers. Truly one can risk the statement that the individual fundamental operations of mixing in rooler mixers, like kneading, grinding, mixing and thinning, are also performed in turbine mixers. Yet, even if so, in turbine mixers these processes are proceeding at a rate and intensity different than in the roller mixers. The fact should also be recalled that the theoretical backgrounds usually relate to the preparation of sand mixtures from new components, and this considerably restricts the field of application of these descriptions when referred to rebond mixing of the system sand. The fundamentals of the process of the synthetic sand rebonding with bentonite require determination and description of operations, like disaggregation, even distribution of binder and water within the entire volume of the rebonded sand batch, sand grains coating, binder activation and aeration.This study presents the scope of research on the sand rebonding process carried out in turbine mixers. The aim has been to determine the range and specific values of the designing and operating parameters to get optimum properties of the rebonded sand as well as energy input in the process.

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-11-15

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

International Nuclear Information System (INIS)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

2012-01-01

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

Granular flow in static mixers by coupled DEM/CFD approach

Directory of Open Access Journals (Sweden)

Pezo Lato

2016-01-01

Full Text Available The mixing process greatly influence the mixing efficiency, as well as the quality and the price of the intermediate and/or the final product. Static mixer is used for premixing action before the main mixing process, for significant reduction of mixing time and energy consumption. This type of premixing action is not investigated in detail in the open literature. In this article, the novel numerical approach called Discrete Element Method is used for modelling of granular flow in multiple static mixer applications (1 - 3 Komax or Ross mixing elements were utilized, while the Computational Fluid Dynamic method was chosen for fluid flow modelling, using the Eulerian multiphase model. The main aim of this article is to predict the behaviour of granules being gravitationally transported in different mixer configuration and to choose the best configuration of the mixer taking into account the total particle path, the number of mixing elements and the quality of the obtained mixture. The results of the numerical simulations in the static mixers were compared to experimental results, the mixing quality is examined by RSD (relative standard deviation criterion, and the effects on the mixer type and the number of mixing elements on mixing process were studied. The effects of the mixer type and the number of mixing elements on mixing process were studied using analysis of variance (ANOVA. Mathematical modelling is used for optimization of number of Ross and Komax segments in mixer in order to gain desirable mixing results. [Projekat Ministarstva nauke Republike Srbije, br. TR31055

Research on Mixer Parametric Modeling System Based on Redevelopment of ANSYS

Directory of Open Access Journals (Sweden)

Bin Zheng

2015-01-01

Full Text Available In this paper, the mixer parametric modeling system software was developed by using VB which was taken as the foreground development program, and the paper combined with ANSYS software to create the finite element model of mixer blade and cylinder for the following numerical simulation of the flow field and parameter optimization of mixer. The software user interface was developed by VB and the pre-process model was created by invoking APDL of ANSYS in background. Therefore, the operation of modeling, meshing, component-building of mixer blade and cylinder were completed by using APDL and the graphic and text were outputted and displayed on the mixer parametric modeling system user interface which was developed by VB. Practice proved that it is convenient to modify the mixer solid model created by the parametric design language of ANSYS due to the similar structure.

Mixer pump test plan for double shell tank AZ-101

International Nuclear Information System (INIS)

STAEHR, T.W.

1999-01-01

Mixer pump systems have been chosen as the method for retrieval of tank wastes contained in double shell tanks at Hanford. This document describes the plan for testing and demonstrating the ability of two 300 hp mixer pumps to mobilize waste in tank AZ-101. The mixer pumps, equipment and instrumentation to monitor the test were installed by Project W-151

Cancellation of OpAmp virtual ground imperfections by a negative conductance applied to improve RF receiver linearity

NARCIS (Netherlands)

Mahrof, D.H.; Klumperink, Eric A.M.; Ru, Z.; Oude Alink, M.S.; Nauta, Bram

2014-01-01

High linearity CMOS radio receivers often exploit linear V-I conversion at RF, followed by passive down-mixing and an OpAmp-based Transimpedance Amplifier at baseband. Due to nonlinearity and finite gain in the OpAmp, virtual ground is imperfect, inducing distortion currents. This paper proposes a

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2015-11-01

Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

Mixer-settler performance evaluation in actinide extraction

International Nuclear Information System (INIS)

Camilo, R.L.; Goncalves, M.A.; Carvalho, E.I.; Nakazone, A.K.; Araujo, B.F. de; Araujo, J.A.

1988-07-01

This paper deals with four conceptions of mixer-settlers used for actinide purification and recovery. By means of the uranium concentration profiles in the organic and aqueous phases, the evaluation of each mixer-settler was made. The main purpose of this work is the data acquisition, for adapting the different contactor types to actinide recovery by liquid-liquid extraction, in the nuclear fuel cycle. (autor) [pt

The development of terahertz superconducting hot-electron bolometric mixers

International Nuclear Information System (INIS)

Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Huebers, Heinz-Wilhelm

2004-01-01

We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model

Methodology for calculating power consumption of planetary mixers

Science.gov (United States)

Antsiferov, S. I.; Voronov, V. P.; Evtushenko, E. I.; Yakovlev, E. A.

2018-03-01

The paper presents the methodology and equations for calculating the power consumption necessary to overcome the resistance of a dry mixture caused by the movement of cylindrical rods in the body of a planetary mixer, as well as the calculation of the power consumed by idling mixers of this type. The equations take into account the size and physico-mechanical properties of mixing material, the size and shape of the mixer's working elements and the kinematics of its movement. The dependence of the power consumption on the angle of rotation in the plane perpendicular to the axis of rotation of the working member is presented.

Alternate paddle configuration for improved wear resistance in the saltstone mixer

Energy Technology Data Exchange (ETDEWEB)

Reigel, M. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Fowley, M. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2013-09-23

The Saltstone Production Facility has a 10-inch Readco-Kurimoto continuous mixer that mixes the premix dry feeds and low-level waste salt solution to make fresh (uncured) saltstone. Inspection of the mixer in January 2013 showed significant wear on the third, fourth and fifth paddle pairs after the conveying augers. A 2-inch Readco-Kurimoto continuous mixer was used to test alternate paddle configurations for use in the 10-inch mixer to decrease the wear rate on the paddles. Two wear tests were conducted to investigate a method of reducing wear on the mixer paddles. The first test (wear test 2a) had a paddle configuration similar to the currently installed 10-inch mixer in the SPF. This test established baseline wear. The second test (wear test 2b) had a reconfigured paddle arrangement that replaced the flat paddles with helical paddles for paddle pairs 2 - 6 and aligned paddle pair 1 with the augers. The intent of the reconfiguration was to more effectively convey the partially wetted dry feeds through the transition region and into the liquid feed where paddle wear is reduced due to dry feeds and salt solution being mixed at the intended water to premix ratio. The design of the helical paddles provides conveyance through the transition region to the liquid feed inlet. The alignment with the auger is aimed to provide a smoother transition (minimizing the discontinuity between the auger and paddle pair 1) into the downstream paddles. A soft metal with low wear resistance (6000 series aluminum) was used for the wear testing paddles to determine wear patterns while minimizing run time and maximizing wear rate. For the two paddle configurations tested using the scaled 2-inch Readco-Kurimoto continuous mixer, with the first six paddles after the augers replaced by the wear paddles and the remaining paddles were stainless steel. Since the 10-inch SPF mixer is designed with the liquid inlet centered over paddle pairs 5 and 6, the scaled 2-inch mixer was configured the

System and Circuit Design Aspects for CMOS Wireless Handset Receivers

DEFF Research Database (Denmark)

Mikkelsen, Jan H.

and it is shown that, depending on the size of the guard-ring, the Q-value reduction is found to be significantly reduced at RF frequencies. In continuation of this, various coupling effects for CMOS on-chip co-planar spiral inductors are presented. Simple guard-rings are shown to improve isolation between...... closely spaced adjacent inductors by approximately 10-15dB. At larger distances the gain of having a guard-ring reduces and eventually the gain reduces to zero dB. For modeling purposes an extended lumped element model is proposed and found to fit very well with crosstalk measurements....

Numerical simulation and PEPT measurements of a 3D conical helical-blade mixer: a high potential solids mixer for solid-state fermentation

NARCIS (Netherlands)

Schutyser, M.A.I.; Briels, W.J.; Rinzema, A.; Boom, R.M.

2003-01-01

Helical-blade solids mixers have a large potential as bioreactors for solid-state fermentation (SSF). Fundamental knowledge of the flow and mixing behavior is required for robust operation of these mixers. In this study predictions of a discrete particle model were compared to experiments with

Quantum limited quasiparticle mixers at 100 GHz

International Nuclear Information System (INIS)

Mears, C.A; Hu, Qing; Richards, P.L.; Worsham, A.H.; Prober, D.E.; Raeisaenen, A.V.

1990-09-01

We have made accurate measurements of the noise and gain of superconducting-insulating-superconducting (SIS) mixers employing small area (1μm 2 ) Ta/Ta 2 O 5 /Pb 0.9 Bi 0.1 tunnel junctions. We have measured an added mixer noise of 0.61 +/- 0.31 quanta at 95.0 GHz, which is within 25 percent of the quantum limit of 0.5 quanta. We have carried out a detailed comparison between theoretical predictions of the quantum theory of mixing and experimentally measured noise and gain. We used the shapes of I-V curves pumped at the upper and lower sideband frequencies to deduce values of the embedding admittances at these frequencies. Using these admittances, the mixer noise and gain predicted by quantum theory are in excellent agreement with experiment. 21 refs., 9 figs

A Robust High-Performance GPS L1 Receiver with Single-stage Quadrature Redio-Frequency Circuit

Science.gov (United States)

Liu, Jianghua; Xu, Weilin; Wan, Qinq; Liu, Tianci

2018-03-01

A low power current reuse single-stage quadrature raido-frequency part (SQRF) is proposed for GPS L1 receiver in 180nm CMOS process. The proposed circuit consists of LNA, Mixer, QVCO, is called the QLMV cell. A two blocks stacked topology is adopted in this design. The parallel QVCO and mixer placed on the top forms the upper stacked block, and the LNA placed on the bottom forms the other stacked block. The two blocks share the current and achieve low power performance. To improve the stability, a float current source is proposed. The float current isolated the local oscillation signal and the input RF signal, which bring the whole circuit robust high-performance. The result shows conversion gain is 34 dB, noise figure is three dB, the phase noise is -110 dBc/Hz at 1MHz and IIP3 is -20 dBm. The proposed circuit dissipated 1.7mW with 1 V supply voltage.

A low-spurious fast-hopping MB-OFDM UWB synthesizer

Energy Technology Data Exchange (ETDEWEB)

Chen Danfeng; Li Wei; Li Ning; Ren Junyan, E-mail: w-li@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2010-06-15

A frequency synthesizer for the ultra-wide band (UWB) group no. 1 is proposed. The synthesizer uses a phase-locked loop (PLL) and single-sideband (SSB) mixers to generate the three center frequencies of the first band group by mixing 4224 MHz with {+-}264 MHz and 792 MHz, respectively. A novel multi-QSSB mixer is designed to combine the function of frequency selection and frequency conversion for low power and high linearity. The synthesizer is fabricated in Jazz 0.18-{mu}m RF CMOS technology. The measured reference spur is as low as -69 dBc and the maximum spur is the LO leakage of -32 dBc. A low phase noise of -110 dBc/Hz - 1 MHz offset and an integrated phase noise of 1.86{sup 0} are achieved. The hopping time between different bands is less than 1.8 ns. The synthesizer consumes 30 mA from a 1.8 V supply. (semiconductor integrated circuits)

A low-spurious fast-hopping MB-OFDM UWB synthesizer

International Nuclear Information System (INIS)

Chen Danfeng; Li Wei; Li Ning; Ren Junyan

2010-01-01

A frequency synthesizer for the ultra-wide band (UWB) group no. 1 is proposed. The synthesizer uses a phase-locked loop (PLL) and single-sideband (SSB) mixers to generate the three center frequencies of the first band group by mixing 4224 MHz with ±264 MHz and 792 MHz, respectively. A novel multi-QSSB mixer is designed to combine the function of frequency selection and frequency conversion for low power and high linearity. The synthesizer is fabricated in Jazz 0.18-μm RF CMOS technology. The measured reference spur is as low as -69 dBc and the maximum spur is the LO leakage of -32 dBc. A low phase noise of -110 dBc/Hz - 1 MHz offset and an integrated phase noise of 1.86 0 are achieved. The hopping time between different bands is less than 1.8 ns. The synthesizer consumes 30 mA from a 1.8 V supply. (semiconductor integrated circuits)

Signal processing circuitry for CMOS-based SAW gas sensors with low power and area

International Nuclear Information System (INIS)

Mohd-Yasin, F.; Tye, K.F.; Reaz, M.B.I.

2009-06-01

The design and development of interface circuitries for CMOS-based SAW gas sensor is presented in this paper. The SAW gas sensor devices typically run at RF, requiring most designs to have complex signal conditioning circuitry. The proposed approach attempts to design a simple architecture with reduced power consumption. The SAW gas sensors operate at 354MHz. Simulation data show that the interface circuitries are ten times smaller with lower power supply, comparing to existing work. (author)

Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

Directory of Open Access Journals (Sweden)

Ler Chun Lee

2008-01-01

Full Text Available A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA. A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers

International Nuclear Information System (INIS)

Fetterman, H.R.; Tannenwald, P.E.; Clifton, B.J.; Parker, C.D.; Fitzgerald, W.D.; Erickson, N.R.

1978-01-01

We have made heterodyne radiometric measurements with GaAs Schottky diode mixers, mounted in a corner-reflector configuration, over the spectral range 170 μm to 1 mm. At 400 μm, system noise temperatures of 9700 K DSB (NEP=1.4 x 10 - 19 W/Hz) and mixer noise temperatures of 5900 K have been achieved. This same quasioptical mixer has also been used to generate 10 - 7 W of tunable radiation suitable for spectroscopic applications

Turbulent measurements in the lobe mixer of a turbofan engine. Turbofan engine lobe mixer nagare no ranryu keisoku

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Makoto; Ogawa, Yuji; Arakawa, Chuichi; Tagori, Tetsuo [Ishikawajima-Harima Heavy Industries, Co., Ltd., Tokyo, (Japan) Nippon Steel Corp., Tokyo, (Japan) The Univ. of Tokyo, Tokyo, (Japan). Faculty of Engineering The Univ. of Tsukuba, Tsukuba, (Japan)

1990-01-25

In order to examine the flow generated by the lobe mixer of a turbofan engine precisely, after measuring a three dimensional turbulent flow by a hot-wire anemometer, the mixing process of a bypass flow and a core flow with cross-sectional vortexes, and factors generating the vortex were clarified experimentally using the scale model of an exhaust duct with the lobe mixer. As a result, the mixing process was strongly affected by a lobe tip figure and a lobe figure near a center-body, and affected by the minimum gap between the lobe and center-body. The subsequent mixing process was scarcely affected by the ratio of a core flow velocity to a bypass flow one, although strongly affected by flow conditions on a lobe surface. Since the lobe mixer promoted the mixing around a center axis shifting a fast core flow outwards, it was unfavorable to mixing, however, it was expected to be useful for reducing engine jet noise. 3 refs., 7 figs.

Design of a Novel W-Sinker RF LDMOS

Directory of Open Access Journals (Sweden)

Xiangming Xu

2015-01-01

Full Text Available A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% and improve power density. Furthermore, the W-sinker structure reduces the parasitic resistance and inductance and improves thermal conductivity of the device as well. Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is well established. An F+A power amplifier product with frequency range of 1.8–2.1 GHz is developed for the application of 4G LTE base station and industry leading performance is achieved. The qualification results show that the device reliability and ruggedness can also meet requirement of the application.

An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

International Nuclear Information System (INIS)

Gao Peijun; Min Hao; Oh, N J

2009-01-01

A differential LC voltage controlled oscillator (VCO) employing parasitic vertical-NPN (V-NPN) transistors as a negative g m -cell is presented to improve the close-in phase noise. The V-NPN transistors have lower flicker noise compared to MOS transistors. DC and AC characteristics of the V-NPN transistors are measured to facilitate the VCO design. The proposed VCO is implemented in a 0.18 μm CMOS RF/mixed signal process, and the measurement results show the close-in phase noise is improved by 3.5-9.1 dB from 100 Hz to 10 kHz offset compared to that of a similar CMOS VCO. The proposed VCO consumes only 0.41 mA from a 1.5 V power supply. (semiconductor integrated circuits)

Numerical simulation and PEPT measurements of a 3D conical helical-bla de mixer: A high potential solids mixer for solid-state fermentation

NARCIS (Netherlands)

Schutyser, M.A.I.; Schutyser, M.A.I.; Briels, Willem J.; Rinzema, A.; Boom, R.M.; Boom, R.M.

2003-01-01

Helical-blade solids mixers have a large potential as bioreactors for solid-state fermentation (SSF). Fundamental knowledge of the flow and mixing behavior is required for robust operation of these mixers. In this study predictions of a discrete particle model were compared to experiments with

Flow regimes in a T-mixer operating with a binary mixture

Science.gov (United States)

Camarri, Simone; Siconolfi, Lorenzo; Galletti, Chiara; Salvetti, Maria Vittoria

2015-11-01

Efficient mixing in small volumes is a key target in many processes. Among the most common micro-devices, passive T-shaped micro-mixers are widely used. For this reason, T-mixers have been studied in the literature and its working flow regimes have been identified. However, in most of the available theoretical studies it is assumed that only one working fluid is used, i.e. that the same fluid at the same thermodynamic conditions is entering the two inlet conduits of the mixer. Conversely, the practical use of micro-devices often involves the mixing of two different fluids or of the same fluid at different thermodynamic conditions. In this case flow regimes significantly different than those observed for a single working fluid may occur. The present work aims at investigating the flow regimes in a T-mixers when water at two different temperatures, i.e. having different viscosity and density, is entering the mixer. The effect of the temperature difference on the flow regimes in a 3D T-mixer is investigated by DNS and stability analysis and the results are compared to the case in which a single working fluid is employed.

Wide-Range Adaptive RF-to-DC Power Converter for UHF RFIDs

KAUST Repository

Ouda, Mahmoud H.

2016-07-27

A wide-range, differential, cross-coupled rectifier is proposed with an extended dynamic range of input RF power that enables wireless powering from varying distances. The proposed architecture mitigates the reverse-leakage problem in conven- tional, cross-coupled rectifiers without degrading sensitivity. A prototype is designed for UHF RFID applications, and is imple- mented using 0.18 μ m CMOS technology. On-chip measurements demonstrate a sensitivity of − 18 dBm for 1 V output over a 100 k Ω load and a peak RF-to-DC power conversion efficiency of 65%. A conventional, fully cross-coupled rectifier is fabricated along- side for comparison and the proposed rectifier shows more than 2 × increase in dynamic range and a 25% boosting in output voltage than the conventional rectifier

Transitory powder flow dynamics during emptying of a continuous mixer

OpenAIRE

Ammarcha , Chawki; Gatumel , Cendrine; Dirion , Jean-Louis; Cabassud , Michel; Mizonov , Vadim; Berthiaux , Henri

2013-01-01

International audience; This article investigates the emptying process of a continuous powder mixer, from both experimental and modelling points of view. The apparatus used in this work is a pilot scale commercial mixer Gericke GCM500, for which a specific experimental protocol has been developed to determine the hold up in the mixer and the real outflow. We demonstrate that the dynamics of the process is governed by the rotational speed of the stirrer, as it fixes characteristic values of th...

Development of air pulsed ejector mixer settlers of different capacities

Energy Technology Data Exchange (ETDEWEB)

Rajagopalan, C V; Periasamy, K; Koganti, S B [Reprocessing Programme, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

1994-06-01

Nuclear industry has made significant contributions in the development of liquid-liquid contactors, for the separation of one or more solutes from feed solutions wherein they provide a more economical alternative compared to other unit operations. The various equipment that are used can be broadly classified into three categories: (1) mixer settlers (2) liquid pulsed sieve plate columns (3) centrifugal contactors. Each one has its own merits and demerits. Mixer settlers score over the other contactors in their simple design and reliable operation over a wide range of process conditions. Air pulsed mixer settlers of different designs are in use in the fuel reprocessing industry. The present paper describes the development of a new type of mixer settler based on ejector as the mixing device. (author). 7 refs., 3 figs., 1 tab.

Design of a 2.4-GHz CMOS monolithic fractional-N frequency synthesizer

Science.gov (United States)

Shu, Keliu

The wireless communication technology and market have been growing rapidly since a decade ago. The high demand market is a driving need for higher integration in the wireless transceivers. The trend is to achieve low-cost, small form factor and low power consumption. With the ever-reducing feature size, it is becoming feasible to integrate the RF front-end together with the baseband in the low-cost CMOS technology. The frequency synthesizer is a key building block in the RF front-end of the transceivers. It is used as a local oscillator for frequency translation and channel selection. The design of a 2.4-GHz low-power frequency synthesizer in 0.35mum CMOS is a challenging task mainly due to the high-speed prescaler. In this dissertation, a brief review of conventional PLL and frequency synthesizers is provided. Design techniques of a 2.4-GHz monolithic SigmaDelta fractional-N frequency synthesizer are investigated. Novel techniques are proposed to tackle the speed and integration bottlenecks of high-frequency PLL. A low-power and inherently glitch-free phase-switching prescaler and an on-chip loop filter with capacitance multiplier are developed. Compared with the existing and popular dual-path topology, the proposed loop filter reduces circuit complexity and its power consumption and noise are negligible. Furthermore, a third-order three-level digital SigmaDelta modulator topology is employed to reduce the phase noise generated by the modulator. Suitable PFD and charge-pump designs are employed to reduce their nonlinearity effects and thus minimize the folding of the SigmaDelta modulator-shaped phase noise. A prototype of the fractional-N synthesizer together with some standalone building blocks is designed and fabricated in TSMC 0.35mum CMOS through MOSIS. The prototype frequency synthesizer and standalone prescaler and loop filter are characterized. The feasibility and practicality of the proposed prescaler and loop filter are experimentally verified.

A Matlab-Based Graphical User Interface for Simulation and Control Design of a Hydrogen Mixer

Science.gov (United States)

Richter, Hanz; Figueroa, Fernando

2003-01-01

A Graphical User Interface (GUI) that facilitates prediction and control design tasks for a propellant mixer is described. The Hydrogen mixer is used in rocket test stand operations at the NASA John C. Stennis Space Center. The mixer injects gaseous hydrogen (GH2) into a stream of liquid hydrogen (LH2) to obtain a combined flow with desired thermodynamic properties. The flows of GH2 and LH2 into the mixer are regulated by two control valves, and a third control valve is installed at the exit of the mixer to regulate the combined flow. The three valves may be simultaneously operated in order to achieve any desired combination of total flow, exit temperature and mixer pressure within the range of operation. The mixer, thus, constitutes a three-input, three-output system. A mathematical model of the mixer has been obtained and validated with experimental data. The GUI presented here uses the model to predict mixer response under diverse conditions.

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

A Multidisciplinary Approach to Mixer-Ejector Analysis and Design

Science.gov (United States)

Hendricks, Eric, S.; Seidel, Jonathan, A.

2012-01-01

The design of an engine for a civil supersonic aircraft presents a difficult multidisciplinary problem to propulsion system engineers. There are numerous competing requirements for the engine, such as to be efficient during cruise while yet quiet enough at takeoff to meet airport noise regulations. The use of mixer-ejector nozzles presents one possible solution to this challenge. However, designing a mixer-ejector which will successfully address both of these concerns is a difficult proposition. Presented in this paper is an integrated multidisciplinary approach to the analysis and design of these systems. A process that uses several low-fidelity tools to evaluate both the performance and acoustics of mixer-ejectors nozzles is described. This process is further expanded to include system-level modeling of engines and aircraft to determine the effects on mission performance and noise near airports. The overall process is developed in the OpenMDAO framework currently being developed by NASA. From the developed process, sample results are given for a notional mixer-ejector design, thereby demonstrating the capabilities of the method.

RF applications in digital signal processing

CERN Document Server

Schilcher, T

2008-01-01

Ever higher demands for stability, accuracy, reproducibility, and monitoring capability are being placed on Low-Level Radio Frequency (LLRF) systems of particle accelerators. Meanwhile, continuing rapid advances in digital signal processing technology are being exploited to meet these demands, thus leading to development of digital LLRF systems. The rst part of this course will begin by focusing on some of the important building-blocks of RF signal processing including mixer theory and down-conversion, I/Q (amplitude and phase) detection, digital down-conversion (DDC) and decimation, concluding with a survey of I/Q modulators. The second part of the course will introduce basic concepts of feedback systems, including examples of digital cavity eld and phase control, followed by radial loop architectures. Adaptive feed-forward systems used for the suppression of repetitive beam disturbances will be examined. Finally, applications and principles of system identi cation approaches will be summarized.

Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA

International Nuclear Information System (INIS)

Jing Yiou; Lu Huaxiang

2013-01-01

This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier (LNA), current-reuse V—I converter, active double balanced mixer and transimpedance amplifier for short range device (SRD) applications. With the proposed current-reuse LNA, the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices. The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm 2 . Operating in 433 MHz band, the measurement results show the RF front-end achieves a conversion gain of 29.7 dB, a double side band noise figure of 9.7 dB, an input referenced third intercept point of −24.9 dBm with only 1.44 mA power consumption from 1.8 V supply. Compared to other reported front-ends, it has an advantage in power consumption. (semiconductor integrated circuits)

A passive UHF RFID tag chip with a dual-resolution temperature sensor in a 0.18 μm standard CMOS process

International Nuclear Information System (INIS)

Feng Peng; Zhang Qi; Wu Nanjian

2011-01-01

This paper presents a passive EPC Gen-2 UHF RFID tag chip with a dual-resolution temperature sensor. The chip tag integrates a temperature sensor, an RF/analog front-end circuit, an NVM memory and a digital baseband in a standard CMOS process. The sensor with a low power sigma—delta (ΣΔ) ADC is designed to operate in low and high resolution modes. It can not only achieve the target accuracy but also reduce the power consumption and the sensing time. A CMOS-only RF rectifier and a single-poly non-volatile memory (NVM) are designed to realize a low cost tag chip. The 192-bit-NVM tag chip with an area of 1 mm 2 is implemented in a 0.18-μm standard CMOS process. The sensitivity of the tag is −10.7 dBm/−8.4 dBm when the sensor is disabled/enabled. It achieves a maximum reading/sensing distance of 4 m/3.1 m at 2 W EIRP. The inaccuracy of the sensor is −0.6 °C/0.5 °C (−1.0 °C/1.2 °C) in the operating range from 5 to 15 °C in high resolution mode (−30 to 50 °C in low resolution mode). The resolution of the sensor achieves 0.02 °C (0.18 °C) in high (low) resolution mode. (semiconductor integrated circuits)

Study on velocity distribution in a pool by submersible mixers

International Nuclear Information System (INIS)

Tian, F; Shi, W D; Lu, X N; Chen, B; Jiang, H

2012-01-01

To study the distribution of submersible mixers and agitating effect in the sewage treatment pool, Pro/E software was utilized to build the three-dimensional model. Then, the large-scale computational fluid dynamics software FLUENT6.3 was used. ICEM software was used to build unstructured grid of sewage treatment pool. After that, the sewage treatment pool was numerically simulated by dynamic coordinate system technology and RNG k-ε turbulent model and PIOS algorithm. The macro fluid field and each section velocity flow field distribution were analyzed to observe the efficiency of each submersible mixer. The average velocity and mixing area in the sewage pool were studied simultaneously. Results show that: the preferred project B, two submersible mixers speed is 980 r/min, and setting angles are all 30°. Fluid mixing area in the pool has reached more than 95%. Under the action of two mixers, the fluid in the sewage pool form a continuous circulating water flow. The fluid is mixed adequately and average velocity of fluid in the pool is at around 0.241m/s, which agreed with the work requirements. Consequently it can provide a reference basis for practical engineering application of submersible mixers by using this method.

The development of mixer machine for organic animal feed production: Proposed study

Science.gov (United States)

Leman, A. M.; Wahab, R. Abdul; Zakaria, Supaat; Feriyanto, Dafit; Nor, M. I. F. Che Mohd; Muzarpar, Syafiq

2017-09-01

Mixer machine plays a major role in producing homogenous composition of animal feed. Long time production, inhomogeneous and minor agglomeration has been observed by existing mixer. Therefore, this paper proposed continuous mixer to enhance mixing efficiency with shorter time of mixing process in order to abbreviate the whole process in animal feed production. Through calculation of torque, torsion, bending, power and energy consumption will perform in mixer machine process. Proposed mixer machine is designed by two layer buckets with purpose for continuity of mixing process. Mixing process was performed by 4 blades which consists of various arm length such as 50, 100,150 and 225 mm in 60 rpm velocity clockwise rotation. Therefore by using this machine will produce the homogenous composition of animal feed through nutrition analysis and short operation time of mixing process approximately of 5 minutes. Therefore, the production of animal feed will suitable for various animals including poultry and aquatic fish. This mixer will available for various organic material in animal feed production. Therefore, this paper will highlights some areas such as continues animal feed supply chain and bio-based animal feed.

Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2004-01-01

The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

MOSFET-Only Mixer/IIR Filter with Gain using Parametric Amplification

DEFF Research Database (Denmark)

Custódio, José R.; Oliveira, J.; Oliveira, L. B.

2010-01-01

This paper describes the design of a discrete-time passive Mixer/IIR filter. The use of an improved MOS Parametric Amplification leads to a moderate gain in the signal path and improved noise performance, instead of the conversion loss inherent to passive mixers. Simulation results demonstrate th...

Design of millimeter-wave MEMS-based reconfigurable front-end circuits using the standard CMOS technology

International Nuclear Information System (INIS)

Chang, Chia-Chan; Hsieh, Sheng-Chi; Chen, Chien-Hsun; Huang, Chin-Yen; Yao, Chun-Han; Lin, Chun-Chi

2011-01-01

This paper describes the designs of three reconfigurable CMOS-MEMS front-end components for V-/W-band applications. The suspended MEMS structure is released through post-CMOS micromachining. To achieve circuit reconfigurability, dual-state and multi-state fishbone-beam-drive actuators are proposed herein. The reconfigurable bandstop is fabricated in a 0.35 µm CMOS process with the chip size of 0.765 × 0.98 mm 2 , showing that the stop-band frequency can be switched from 60 to 50 GHz with 40 V actuation voltage. The measured isolation is better than 38 dB at 60 GHz and 34 dB at 50 GHz, respectively. The bandpass filter-integrated single-pole single-throw switch, using the 0.18 µm CMOS process, demonstrates that insertion loss and return loss are better than 6.2 and 15 dB from 88 to 100 GHz in the on-state, and isolation is better than 21 dB in the off-state with an actuation voltage of 51 V. The chip size is 0.7 × 1.04 mm 2 . The third component is a reconfigurable slot antenna fabricated in a 0.18 µm CMOS process with the chip size of 1.2 × 1.2 mm 2 . By utilizing the multi-state actuators, the frequencies of this antenna can be switched to 43, 47, 50.5, 54, 57.5 GHz with return loss better than 20 dB. Those circuits demonstrate good RF performance and are relatively compact by employing several size miniaturizing techniques, thereby enabling a great potential for the future single-chip transceiver.

Twin Screw Mixer/Fine Grind Facility

Data.gov (United States)

Federal Laboratory Consortium — The 40-mm Twin-Screw Mixer/Extruder (TSE) pilot plant is a continuous, remotely operated, flexible facility that can significantly enhance safety and environmental...

CONTINUOUS PRODUCTION OF HYDROXYPROPYL STARCH IN A STATIC MIXER REACTOR

NARCIS (Netherlands)

LAMMERS, G; STAMHUIS, EJ; BEENACKERS, AACM

A novel type of reactor for the chemical derivatization of starch pastes is presented. The design is based on the application of static mixers. The reactor shows excellent plug flow behaviour with a Peclet number of about 100. The viscosity behaviour of concentrated starch pastes in the static mixer

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

International Nuclear Information System (INIS)

Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

2011-01-01

This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

Numerical Investigation on Aerodynamic and Combustion Performance of Chevron Mixer Inside an Afterburner.

Science.gov (United States)

Yong, Shan; JingZhou, Zhang; Yameng, Wang

2014-11-01

To improve the performance of the afterburner for the turbofan engine, an innovative type of mixer, namely, the chevron mixer, was considered to enhance the mixture between the core flow and the bypass flow. Computational fluid dynamics (CFD) simulations investigated the aerodynamic performances and combustion characteristics of the chevron mixer inside a typical afterburner. Three types of mixer, namely, CC (chevrons tilted into core flow), CB (chevrons tilted into bypass flow), and CA (chevrons tilted into core flow and bypass flow alternately), respectively, were studied on the aerodynamic performances of mixing process. The chevrons arrangement has significant effect on the mixing characteristics and the CA mode seems to be advantageous for the generation of the stronger streamwise vortices with lower aerodynamic loss. Further investigations on combustion characteristics for CA mode were performed. Calculation results reveal that the local temperature distribution at the leading edge section of flame holder is improved under the action of streamwise vortices shedding from chevron mixers. Consequently, the combustion efficiency increased by 3.5% compared with confluent mixer under the same fuel supply scheme.

Design and Fabrication of a Foundry Sand Mixer Using Locally ...

African Journals Online (AJOL)

Most small foundry shops mix their sand manually which is not efficient since homogenous mix cannot be guaranteed and even when foundry mixer are available most of them are imported costing the nation huge foriegn exchange. A foundry sand mixer capable of mixing foundry sand has been designed and fabricated ...

Side-band-separating heterodyne mixer for band 9 of ALMA.

NARCIS (Netherlands)

Mena, F. P.; Baryshev, A. M.; Kooi, J.; Lodewijk, C. F. J.; Gerlofsma, G.; Hesper, R.; Wild, W.; Shen, XC; Lu, W; Zhang, J; Dou, WB

2006-01-01

Here we present the realization of a side-band-separating (2SB) heterodyne mixer for the frequency range from 602 to 720 GHz (corresponding to ALMA band 9). The mixer, in brief, consists of a quadrature hybrid, two LO injectors, two SIS junctions, and three dumping loads. All the parts were modeled

Numerical investigation of the effects of geometric parameters on transverse motion with slanted-groove micro-mixers

Energy Technology Data Exchange (ETDEWEB)

Baik, Seung Joo; Cho, Jae Yong; Choi, Se Bin; Lee, Joon Sang [School of Mechanical Engineering, Yonsei University, Seoul (Korea, Republic of)

2016-08-15

We investigated hydrodynamic phenomena inside several passive microfluidic mixers using a Lattice Boltzmann method (LBM) based on particle mesoscopic kinetic equations. Mixing processes were simulated in a Slanted grooved micro-mixer (SGM), a Staggered herringbone grooved micro-mixer (SHM), and a Bi-layered staggered herringbone grooved micro-mixer (BSHM). Then, the effects of six geometric mixer parameters (i.e., groove height to channel height ratio, groove width to groove pitch length ratio, groove pitch to groove height ratio, groove intersection angle, herringbone groove asymmetric ratio and bi-layered groove asymmetric ratio) on mixing were investigated using computed cross-flow velocity and helicity density distributions in the flow cross-section. We demonstrated that helicity density provides sufficient information to analyze micro helical motion within a micro-mixer, allowing for micro-mixer design optimization.

Sandwich-format 3D printed microfluidic mixers: a flexible platform for multi-probe analysis

International Nuclear Information System (INIS)

Kise, Drew P; Reddish, Michael J; Brian Dyer, R

2015-01-01

We report on a microfluidic mixer fabrication platform that increases the versatility and flexibility of mixers for biomolecular applications. A sandwich-format design allows the application of multiple spectroscopic probes to the same mixer. A polymer spacer is ‘sandwiched’ between two transparent windows, creating a closed microfluidic system. The channels of the mixer are defined by regions in the polymer spacer that lack material and therefore the polymer need not be transparent in the spectral region of interest. Suitable window materials such as CaF 2 make the device accessible to a wide range of optical probe wavelengths, from the deep UV to the mid-IR. In this study, we use a commercially available 3D printer to print the polymer spacers to apply three different channel designs into the passive, continuous-flow mixer, and integrated them with three different spectroscopic probes. All three spectroscopic probes are applicable to each mixer without further changes. The sandwich-format mixer coupled with cost-effective 3D printed fabrication techniques could increase the applicability and accessibility of microfluidic mixing to intricate kinetic schemes and monitoring chemical synthesis in cases where only one probe technique proves insufficient. (paper)

BioCMOS Interfaces and Co-Design

CERN Document Server

Carrara, Sandro

2013-01-01

The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

Airfoil-shaped micro-mixers for reducing fouling on membrane surfaces

Science.gov (United States)

Ho, Clifford K; Altman, Susan J; Clem, Paul G; Hibbs, Michael; Cook, Adam W

2012-10-23

An array of airfoil-shaped micro-mixers that enhances fluid mixing within permeable membrane channels, such as used in reverse-osmosis filtration units, while minimizing additional pressure drop. The enhanced mixing reduces fouling of the membrane surfaces. The airfoil-shaped micro-mixer can also be coated with or comprised of biofouling-resistant (biocidal/germicidal) ingredients.

An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

Science.gov (United States)

Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

2016-06-01

The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works.

Development of a micro-mixer-settler for nuclear solvent extraction

International Nuclear Information System (INIS)

Shekhar Kumar; Bijendra Kumar; Sampath, M.; Sivakumar, D.; Kamachi Mudali, U.; Natarajan, R.

2012-01-01

Nuclear solvent extraction was traditionally performed with packed columns, pulse columns, mixer-settlers and centrifugal extractors. However for rapid separations at micro-flow level, micro mixer-settlers were desired and in the past, few of them were actually designed and operated in nuclear solvent extraction research. In the current era of micro-reactor and microchannel devices, there is a renewed interest for micro-mixer-settlers for costly solvents and specialty solutes where small flow-rate is not an issue. In this article, development of a simple but effective micro-mixer-settler for nuclear solvent extraction is reported. The developed unit was tested with 30% TBP/n-dodecane/nitric acid system and in both the regimes of mass transfer c → d (mass transfer from continuous phase to dispersed phase, also written as c → d) and d → c (mass transfer from dispersed phase to continuous phase, also written as d → c) nearly 100% efficiency was observed in extraction as well as stripping modes of operation. (author)

Calculation of lobe mixer flow with reynolds stress model. Oryoku hoteishiki model ni yoru lobe mixer ryu no suchi keisan

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Makoto; Arakawa, Chuichi; Tagori, Tetsuo [Ishikawajima-Harima Heavy Industries, Co., Ltd., Tokyo (Japan) Univ. of Tokyo, Tokyo (Japan). Faculty of Engineering Univ. of Tsukuba, Tsukuba (Japan)

1990-02-25

It is considered that exhaust gas energy of turbofan engine is partly collected to realize the improvement of propulsion efficiency together with the reduction of noise appeared by the change in velocity distribution of exhaust gas flow. Then Lobe mixer was studied and its effectiveness was widely recognized, however the development of more realistic prediction method of exhaust nozzle system including Lobe mixer, is not completed yet. The stress equation model with low Reynolds Number which is easily used by the expansion of Launder Reece Rodi model in three dimension coordinate system was newly constructed. Applicability of the stress equation in more complicated flow field was greatly improved. While the above model was applied to Lobe mixer system, then the qualitative reproduction of mixing process accompanied with flow around Lobe and longitudinal eddy of core or bi-pass flow, was realized. There is room for improvement of pressure strain correlation term and behavior of Reynolds stress very close by wall surface in this model. 16 refs., 9 figs., 1 tab.

Study of a new static mixer for two-phase and single-phase flows

International Nuclear Information System (INIS)

Foucrier, Michel

1996-01-01

The subject of this work is the study of OptimiX, a new static mixer, which is fully designed using an inverse method taking the final product features as input and based on the physical properties of the fluid to mix. The work began with the construction of an experimental loop which allowed us to qualify the mixer in two-phase and single-phase flow conditions. Next, a chemical method using a new test reaction and a micro-mixing model have been used to further characterise the mixer. This test reaction and the micro-mixing model have been developed by the 'Laboratoire des Sciences du Genie Chimique' of Nancy. The mixer OptimiX has proved to be an excellent device for both macro- and micro-mixing. The capability of this mixer to foster rapid reactions was also demonstrated. The well organised flow pattern of OptimiX, which results from its design, provides it with the unusual feature of being fully calculable. This work emphasizes the internal hydrodynamics of this mixer, justifies the universality of the design procedures, which validation is supported by the completed qualification work. (author) [fr

Matlab GUI for a Fluid Mixer

Science.gov (United States)

Barbieri, Enrique

2005-01-01

The Test and Engineering Directorate at NASA John C. Stennis Space Center developed an interest to study the modeling, evaluation, and control of a liquid hydrogen (LH2) and gas hydrogen (GH2) mixer subsystem of a ground test facility. This facility carries out comprehensive ground-based testing and certification of liquid rocket engines including the Space Shuttle Main engine. A software simulation environment developed in MATLAB/SIMULINK (M/S) will allow NASA engineers to test rocket engine systems at relatively no cost. In the progress report submitted in February 2004, we described the development of two foundation programs, a reverse look-up application using various interpolation algorithms, a variety of search and return methods, and self-checking methods to reduce the error in returned search results to increase the functionality of the program. The results showed that these efforts were successful. To transfer this technology to engineers who are not familiar with the M/S environment, a four-module GUI was implemented allowing the user to evaluate the mixer model under open-loop and closed-loop conditions. The progress report was based on an udergraduate Honors Thesis by Ms. Jamie Granger Austin in the Department of Electrical Engineering and Computer Science at Tulane University, during January-May 2003, and her continued efforts during August-December 2003. In collaboration with Dr. Hanz Richter and Dr. Fernando Figueroa we published these results in a NASA Tech Brief due to appear this year. Although the original proposal in 2003 did not address other components of the test facility, we decided in the last few months to extend our research and consider a related pressurization tank component as well. This report summarizes the results obtained towards a Graphical User Interface (GUI) for the evaluation and control of the hydrogen mixer subsystem model and for the pressurization tank each taken individually. Further research would combine the two

Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

DEFF Research Database (Denmark)

Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

2006-01-01

.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

Antenna-coupled 30 THz hot electron bolometer mixers

OpenAIRE

Shcherbatenko, M.; Lobanov, Y.; Benderov, O.; Shurakov, A.; Ignatov, A.; Titova, N.; Finkel, M.; Maslennikov, S.; Kaurova, N.; Voronov, B.M.; Rodin, A.; Klapwijk, T.M.; Gol'tsman, G.N.

2015-01-01

We report on design and characterization of a superconducting Hot Electron Bolometer Mixer integrated with a logarithmic spiral antenna for mid-IR range observations. The antenna parameters have been adjusted to achieve the ultimate performance at 10 ?m (30 THz) range where O3, NH3, CO2, CH4, N2O, …. lines in the Earth’s atmosphere, in planetary atmospheres and in the interstellar space can be observed. The HEB mixer is made of a thin NbN film deposited onto a GaAs substrate. To couple the ra...

Acceptance test report: Field test of mixer pump for 241-AN-107 caustic addition project

International Nuclear Information System (INIS)

Leshikar, G.A.

1997-01-01

The field acceptance test of a 75 HP mixer pump (Hazleton serial number N-20801) installed in Tank 241-AN-107 was conducted from October 1995 thru February 1996. The objectives defined in the acceptance test were successfully met, with two exceptions recorded. The acceptance test encompassed field verification of mixer pump turntable rotation set-up and operation, verification that the pump instrumentation functions within established limits, facilitation of baseline data collection from the mixer pump mounted ultrasonic instrumentation, verification of mixer pump water flush system operation and validation of a procedure for its operation, and several brief test runs (bump) of the mixer pump

Hybrid CMOS/Molecular Integrated Circuits

Science.gov (United States)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

Tank 241-AZ-101 Mixer Pump Test Vapor Sampling and Analysis Plan

International Nuclear Information System (INIS)

TEMPLETON, A.M.

2000-01-01

This sampling and analysis plan (SAP) identifies characterization objectives pertaining to sample collection, laboratory analytical evaluation, and reporting requirements for vapor samples obtained during the operation of mixer pumps in tank 241-AZ-101. The primary purpose of the mixer pump test (MPT) is to demonstrate that the two 300 horsepower mixer pumps installed in tank 241-AZ-101 can mobilize the settled sludge so that it can be retrieved for treatment and vitrification. Sampling will be performed in accordance with Tank 241-AZ-101 Mixer Pump Test Data Quality Objective (Banning 1999) and Data Quality Objectives for Regulatory Requirements for Hazardous and Radioactive Air Emissions Sampling and Analysis (Mulkey 1999). The sampling will verify if current air emission estimates used in the permit application are correct and provide information for future air permit applications

Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

DEFF Research Database (Denmark)

Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

2006-01-01

In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

Low noise Nb-SIS mixers at far above the gap frequency

NARCIS (Netherlands)

Gao, [No Value; vandeStadt, H; Jegers, JBM; Kovtonyuk, S; Hulshoff, W; Whyborn, ND; Klapwijk, TM; deGraauw, T; Liao, FJ; Liu, JY

1996-01-01

There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise

A simple image-reject mixer based on two parallel phase modulators

Science.gov (United States)

Hu, Dapeng; Zhao, Shanghong; Zhu, Zihang; Li, Xuan; Qu, Kun; Lin, Tao; Zhang, Kun

2018-02-01

A simple photonic microwave image-reject mixer (IRM) using two parallel phase modulators is proposed. First, a photonic microwave mixer with phase shift ability is achieved using two parallel phase modulators (PMs), an optical bandpass filter, three polarization controllers, three polarization beam splitters and two balanced photodetectors. At the output of the mixer, two frequency downconverted signals with tunable frequency difference can be obtained. By adjusting the phase difference as 90° and utilizing an electrical 90° hybrid, the useless components can be eliminated, and the image reject operation is realized. The key advantage of the proposed scheme is the usage of PM, which avoid the DC bias shifting problem and make the system simple and stable. A simulation is performed to verify the proposed scheme, a relative - 90° or 90° phase shift can be obtained between the two output ports of the photonic microwave mixer, at the output of the IRM, 60 dB image-reject ratio is obtained.

PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKAN MIXER SETTLER

Directory of Open Access Journals (Sweden)

Dwi Biyantoro

2017-01-01

Full Text Available ABSTRAK PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKANMIXER SETTLER. Telah dilakukan pemisahanZr – Hf secara sinambung menggunakan pengaduk pengenap (mixer settler 16 stage. Larutan umpan adalah zirkon nitrat dengan kadar Zr = 30786 ppm dan Hf = 499 ppm. Ekstraktan dipakai adalah solven 60 % TBP dalam kerosen dan larutan scrubbingyang dipakai adalah asam nitrat 1 M. Umpan masuk pada stageke 5 dikontakkan secara berlawanan arah dengan solven masuk pada stage ke 16 dan larutan scrubbing masuk pada stage ke 1. Tujuan penelitian ini adalah memisahkan unsur Zr dan Hf dari hasil olah pasir zirkon menggunakan solven TBP dengan alat mixer settler16 stage. Analisis umpan dan hasil proses pemisahan untuk zirkonium (Zr dilakukan dengan menggunakan alat pendar sinar-X, sedangkananalisis unsur hafnium (Hf menggunakan Analisis Pengaktifan Neutron (APN. Parameter penelitian dilakukan dengan variasi keasaman asam nitrat dalam umpan dan variasi waktu pada berbagai laju pengadukan. Hasil penelitian pemisahan unsur Zr dengan Hf diperolehkondisi optimum pada keasaman umpan 4 N HNO3, keseimbangan dicapai setelah 3jam dan laju pengadukan 3300 rpm. Hasil ekstrak  unsur zirkon (Zr diperoleh kadar sebesar 28577 ppm dengan efisiensi 92,76 % serta kadar pengotor hafnium (Hf sebesar 95 ppm. Kata Kunci: pemisahan Zr, Hf, ekstraksi, mixer settler, alat pendar sinar-X, APN. ABSTRACT SEPARATION of Zr - Hf CONTINUOUSLY USE THE MIXER SETTLER. Separation of Zr - Hf continuously using mixer settler 16 stage has been done. The feed solution is zircon nitrate concentration of Zr = 30786 ppm  and Hf = 499 ppm. As the solvent used extractant 60 % TBP in 40 % kerosene. Nitric acid solution used srubbing 1 M. The feed entered into stage to 5 is contacted with solvents direction on the stage to 16 and the scrubbing solution enter the stage to 1. The purpose of this study is to separate Zr and Hf of the results from the process of zircon sand using solvent TBP using 16 stage

Safety basis for the 241-AN-107 mixer pump installation and caustic addition

International Nuclear Information System (INIS)

Van Vleet, R.J.

1994-01-01

This safety Basis was prepared to determine whether or not the proposed activities of installing a 76 HP jet mixer pump and the addition of approximately 50,000 gallons of 19 M (50:50 wt %) aqueous caustic are within the safety envelope as described by Tank Farms (chapter six of WHC-SD-WM-ISB-001, Rev. 0). The safety basis covers the components, structures and systems for the caustic addition and mixer pump installation. These include: installation of the mixer pump and monitoring equipment; operation of the mixer pump, process monitoring equipment and caustic addition; the pump stand, caustic addition skid, the electrical skid, the video camera system and the two densitometers. Also covered is the removal and decontamination of the mixer pump and process monitoring system. Authority for this safety basis is WHC-IP-0842 (Waste Tank Administration). Section 15.9, Rev. 2 (Unreviewed Safety Questions) of WHC-IP-0842 requires that an evaluation be performed for all physical modifications

Design and analysis of an energy-efficient O-QPSK coherent IR-UWB transceiver with a 0.52° RMS phase-noise fractional synthesizer

Science.gov (United States)

Ying, Yutong; Lin, Fujiang; Bai, Xuefei

2018-03-01

This paper explores an energy-efficient pulsed ultra-wideband (UWB) radio-frequency (RF) front-end chip fabricated in 0.18-μm CMOS technology, including a transmitter, receiver, and fractional synthesizer. The transmitter adopts a digital offset quadrature phase-shift keying (O-QPSK) modulator and passive direct-phase multiplexing technology, which are energy- and hardware-efficient, to enhance the data rate for a given spectrum. A passive mixer and a capacitor cross-coupled (CCC) source-follower driving amplifier (DA) are also designed for the transmitter to further reduce the low power consumption. For the receiver, a power-aware low-noise amplifier (LNA) and a quadrature mixer are applied. The LNA adopts a CCC boost common-gate amplifier as the input stage, and its current is reused for the second stage to save power. The mixer uses a shared amplification stage for the following passive IQ mixer. Phase noise suppression of the phase-locked loop (PLL) is achieved by utilizing an even-harmonics-nulled series-coupled quadrature oscillator (QVCO) and an in-band noise-aware charge pump (CP) design. The transceiver achieves a measured data rate of 0.8 Gbps with power consumption of 16 mW and 31.5 mW for the transmitter and the receiver, respectively. The optimized integrated phase noise of the PLL is 0.52° at 4.025 GHz. Project supported by the National Science and Technology Major Project of China (No. 2011ZX03004-002-01).

Compact terahertz passive spectrometer with wideband superconductor-insulator-superconductor mixer.

Science.gov (United States)

Kikuchi, K; Kohjiro, S; Yamada, T; Shimizu, N; Wakatsuki, A

2012-02-01

We developed a compact terahertz (THz) spectrometer with a superconductor-insulator-superconductor (SIS) mixer, aiming to realize a portable and highly sensitive spectrometer to detect dangerous gases at disaster sites. The receiver cryostat which incorporates the SIS mixer and a small cryocooler except for a helium compressor has a weight of 27 kg and dimensions of 200 mm × 270 mm × 690 mm. In spite of the small cooling capacity of the cryocooler, the SIS mixer is successfully cooled lower than 4 K, and the temperature variation is suppressed for the sensitive measurement. By adopting a frequency sweeping system using photonic local oscillator, we demonstrated a spectroscopic measurement of CH(3)CN gas in 0.2-0.5 THz range.

Development of novel micro swirl mixer for producing fine metal oxide nanoparticles by continuous supercritical hydrothermal method.

Science.gov (United States)

Kawasaki, Shin-ichiro; Sue, Kiwamu; Ookawara, Ryuto; Wakashima, Yuichiro; Suzuki, Akira

2010-01-01

Novel micro swirl mixers were developed to synthesize nanoparticles, and the effect of their mixing performance on the characteristics of the synthesized nanoparticles was determined. The results were compared with those obtained using simple T-shaped mixers under the same reaction conditions. The synthesis of NiO, whose characteristics depend on the mixing performance of the mixer, was chosen as a model reaction. Initial investigations highlighted that the average particle size decreased from 32 to 23 to 20 nm as the inner diameter of the swirl mixers was decreased from 3.2 mm (Swirl mixer, SM-3.2) to 0.8 mm (Micro swirl mixer, MSM-0.8) to 0.5 mm (Micro swirl mixer, MSM-0.5), respectively. On the other hand, a similar decrease in the average particle size from 34 to 20 nm was observed with a decrease in the inner diameter of the T-shaped mixers from 1.3 mm (Tee union, T-1.3) to 0.3 mm (Micro tee union, T-0.3), respectively. Further, narrow particle size distributions were observed with a decrease in the inner diameter of each mixer. Furthermore, a computational fluid dynamics (CFD) simulation indicated an excellent mixing mechanism, which contributed to the improvement in the heating rate and the formation of nanoparticles of smaller size with a narrow particle size distribution. The result presented here indicates that the micro swirl mixers produce high-quality metal oxide nanoparticles. The size of the obtained particles with improved size distributions was comparable to that of the particles obtained using the T-shaped mixers, although the inner diameter of the swirl mixers was larger. Therefore, preliminary evidence suggests that the swirl flow mixers have the ability to produce rapid and homogeneous fluid mixing, thus controlling the particle size.

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

A niobiumnitride mixer with niobium tuning circuit

International Nuclear Information System (INIS)

Plathner, B.; Schicke, M.; Lehnert, T.; Gundlach, K.H.; Rothermel, H.; Aoyagi, M.; Takada, S.

1996-01-01

This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩcm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers. copyright 1996 American Institute of Physics

The effects of arbitrary injection angle and flow conditions on venturi-jet mixer

Directory of Open Access Journals (Sweden)

Sundararaj S.

2012-01-01

Full Text Available This paper describes the effect of jet injection angle, cross flow Reynolds number and velocity ratio on entrainment and mixing of jet with incompressible cross flow in venturi-jet mixer. Five different jet injection angles 45o, 60o, 90o, 125o, 135o are tested to evaluate the entrainment of jet and mixing performances of the mixer. Tracer concentration along the downstream of the jet injection, cross flow velocity, jet velocity and pressure drop across the mixer are determined experimentally to characterize the mixing performance of the mixer. The experiments show that the performance of a venturi-jet-mixer substantially improves at high injection angle and can be augmented still by increasing velocity ratio. The jet deflects much and penetrates less in the cross flow as the cross flow Reynolds number is increased. The effect could contribute substantially to the better mixing index with moderate pressure drop. Normalized jet profile, concentration decay, jet velocity profile are computed from equations of conservation of mass, momentum and concentration written in natural co-ordinate systems. The comparison between the experimental and numerical results confirms the accuracy of the simulations. Correlations for jet trajectory and entrainment ratio of the mixer are obtained by multivariate-linear regression analysis using power law.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

2012-01-01

. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

On-line separation of iodine species in reactor water using mixer-settlers

International Nuclear Information System (INIS)

Malmbeck, R.; Skarnemark, G.

1995-01-01

A method for separation of iodine species from water has been developed. It is based on liquid-liquid extraction and separation is achieved in four extraction steps. A system based on this method for continuous separation of iodine species using mixer-settlers has been developed. It consists of four mixer-settler batteries with 4,4,6 and 6 mixer-settler stages each. As organic phase an aliphatic kerosene is used and the separation is improved if the organic solvent has been pretreated with iodine carrier, stripped and washed. With an aqueous feed flowrate of 10 ml/min and mixer-settler battery phase flowratios of approximately 0.1 except for the elementary iodine strip battery with a phase flowratio of 1, the system separation performance is 92% for methyl iodide, 97% for iodate and elementary iodine and 99% for iodide. (orig.)

Continuous mixer, process and use in a pumping plant for a high viscosity fluid

Energy Technology Data Exchange (ETDEWEB)

Cholet, H.

1993-03-12

The invention concerns a novel continuous mixer comprising a rotary shaft carrying two or more vanes for mixing two or more fluids of different viscosities supplied at the inlet of the mixer body and for providing, at the mixer body outlet, a mixture of viscosity lower than that of the more or most viscous fluid. Preferentially, the vane profile is such that, without fluid circulation, rotation of the vanes produces a reaction force parallel to the rotational axis and in the same direction as the resulting flow or does not produce a reaction force of significant magnitude parallel to the rotational axis. The mixer shaft is connected to a pump shaft which is rotated by hydraulic motor driven by pressurized fluid injection. The mixer is used especially for facilitating viscous crude oil pumping from directional wells including horizontal or inclined portions.

A Low-Power CMOS Piezoelectric Transducer Based Energy Harvesting Circuit for Wearable Sensors for Medical Applications

Directory of Open Access Journals (Sweden)

Taeho Oh

2017-12-01

Full Text Available Piezoelectric vibration based energy harvesting systems have been widely utilized and researched as powering modules for various types of sensor systems due to their ease of integration and relatively high energy density compared to RF, thermal, and electrostatic based energy harvesting systems. In this paper, a low-power CMOS full-bridge rectifier is presented as a potential solution for an efficient energy harvesting system for piezoelectric transducers. The energy harvesting circuit consists of two n-channel MOSFETs (NMOS and two p-channel MOSFETs (PMOS devices implementing a full-bridge rectifier coupled with a switch control circuit based on a PMOS device driven by a comparator. With a load of 45 kΩ, the output rectifier voltage and the input piezoelectric transducer voltage are 694 mV and 703 mV, respectably, while the VOUT versus VIN conversion ratio is 98.7% with a PCE of 52.2%. The energy harvesting circuit has been designed using 130 nm standard CMOS process.

Development of digital low level rf system

International Nuclear Information System (INIS)

Michizono, Shinichiro; Anami, Shozo; Katagiri, Hiroaki; Fang, Zhigao; Matsumoto, Toshihiro; Miura, Takako; Yano, Yoshiharu; Yamaguchi, Seiya; Kobayashi, Tetsuya

2008-01-01

One of the biggest advantages of the digital low level rf (LLRF) system is its flexibility. Owing to the recent rapid progress in digital devices (such as ADCs and DACs) and telecommunication devices (mixers and IQ modulators), digital LLRF system becomes popular in these 10 years. The J-PARC linac LLRF system adopted cPCI crates and FPGA based digital feedback system. Since the LLRF control of the normal conducting cavities are more difficult than super conducting cavities due to its lower Q values, fast processing using the FPGA was the essential to the feedback control. After the successful operation of J-PARC linac LLRF system, we developed the STF (ILC test facility in KEK) LLRF system. Since the klystron drives eight cavities in STF phase 1, we modified the FPGA board. Basic configuration and the performances of these systems are summarized. The future R and D projects (ILC and ERL) is also described from the viewpoints of LLRF. (author)

Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

Directory of Open Access Journals (Sweden)

Chao Liu

2015-05-01

Full Text Available This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs are designed based on anti-parallel-diode-pairs (APDPs. With the 2nd and 4th harmonic, local oscillator (LO frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz and 35.5–41 dB in the upper band (340–360 GHz; with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz and 40–48 dB in the upper band (340–360 GHz. The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads.

The modeling of continuous mixers. Part I: The corotating twin-screw extruder

NARCIS (Netherlands)

Meijer, H.E.H.; Elemans, P.H.M.

1988-01-01

In many operations in polymer processing, such as polymer blending, devolatilization, or incorporation of fillers in a polymeric matrix, continuous mixers are used; e.g., corotating twin-screw extruders (ZSK), Buss Cokneaders and Farrel Continuous Mixers. Theoretical analysis of these machines tends

The Strength Analysis of Differential Planetary Gears of Gearbox for Concrete Mixer Truck

Science.gov (United States)

Bae, M. H.; Bae, T. Y.; Kim, D. J.

2018-03-01

The power train of mixer gearbox for concrete mixer truck includes differential planetary gears to get large reduction ratio for operating mixer a drum and simple structure. The planetary gears are very important part of a mixer gearbox where strength problems namely gear bending stress, gear compressive stress and scoring failure are the main concern. In the present study, calculating specifications of the differential planetary gears and analyzing the gear bending and compressive stresses as well as scoring factor of the differential planetary gears gearbox for an optimal design of the mixer gearbox in respect to cost and reliability are investigated. The analyses of actual gear bending and compressive stresses of the differential planetary gears using Lewes & Hertz equation and verifications of the calculated specifications of the differential planetary gears evaluate the results with the data of allowable bending and compressive stress from the Stress-No. of cycles curves of gears. In addition, we also analyze actual gear scoring factor as well as evaluate the possibility of scoring failure of the differential planetary gear.

Design of mixer settler extraction cycles II for recovery uranium from phosphoric acid

International Nuclear Information System (INIS)

Abdul Jami; Hafni Lissa Nuri

2013-01-01

Mixer settler is technically designed for extraction and separation process of uranium from phosphoric acid solution. Design calculation results shows that: the mixer settler consists of two parts: part of extraction process in the mixer tank and part of separation process in settler tank. The mixer tank type of box with 4 baffles, the size of mixer tank, 0.8 m width, 0.8 m length, 1 m high of liquid, 1.05 m high of mixer tank, stirrer type of disk 6 blade, and power of mixing 4 hp and the settler tank type of rectangular with size of settler tank, 0.8 m width 5 m length, 1 m high of liquid, 1.05 m high of settler tank. For uranium recovery efficiency up to 91%, extraction process is done in 3 stage counter current flow using a solvent Organic (O) DEHPA-TOPO in Kerosene at a phase of ratio A/O of 2:1. The aqueous enter through stage 3 and the organic solvent enter through stage 1. The process of settling occurred with the value of settling velocity is 0.000694 m/s, dispersion factor Ψ = 0.3638 and the light fraction as the dispersed phase and value of Reynolds number (NRE) = 3,438. Because of the Reynolds number is lower than 5,000, it indicates that the quality of the separation is very good. (author)

Quantum noise in a terahertz hot electron bolometer mixer

OpenAIRE

Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.

2010-01-01

We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The ?-factor (the quantum efficiency ...

AZ-101 Mixer Pump Test Qualification Test Procedures (QTP)

International Nuclear Information System (INIS)

THOMAS, W.K.

2000-01-01

Describes the Qualification test procedure for the AZ-101 Mixer Pump Data Acquisition System (DAS). The purpose of this Qualification Test Procedure (QTP) is to confirm that the AZ-101 Mixer Pump System has been properly programmed and hardware configured correctly. This QTP will test the software setpoints for the alarms and also check the wiring configuration from the SIMcart to the HMI. An Acceptance Test Procedure (ATP), similar to this QTP will be performed to test field devices and connections from the field

Design and Characterization of 1.8-3.2 THz Schottky-based Harmonic Mixers

OpenAIRE

Bulcha, BT; Hesler, JL; Drakinskiy, V; Stake, J; Valavanis, A; Dean, P; Li, LH; Barker, NS

2016-01-01

A room-temperature Schottky diode-based WM-86 (WR-0.34) harmonic mixer was developed to build high-resolution spectrometers, and multi-pixel receivers in the THz region for applications such as radio astronomy, plasma diagnostics, and remote sensing. The mixer consists of a quartz-based Local Oscillator (LO), Intermediate-Frequency (IF) circuits, and a GaAs-based beam-lead THz circuit with an integrated diode. Measurements of the harmonic mixer were performed using a 2 THz solid-state source ...

Single-chip CMUT-on-CMOS front-end system for real-time volumetric IVUS and ICE imaging.

Science.gov (United States)

Gurun, Gokce; Tekes, Coskun; Zahorian, Jaime; Xu, Toby; Satir, Sarp; Karaman, Mustafa; Hasler, Jennifer; Degertekin, F Levent

2014-02-01

Intravascular ultrasound (IVUS) and intracardiac echography (ICE) catheters with real-time volumetric ultrasound imaging capability can provide unique benefits to many interventional procedures used in the diagnosis and treatment of coronary and structural heart diseases. Integration of capacitive micromachined ultrasonic transducer (CMUT) arrays with front-end electronics in single-chip configuration allows for implementation of such catheter probes with reduced interconnect complexity, miniaturization, and high mechanical flexibility. We implemented a single-chip forward-looking (FL) ultrasound imaging system by fabricating a 1.4-mm-diameter dual-ring CMUT array using CMUT-on-CMOS technology on a front-end IC implemented in 0.35-μm CMOS process. The dual-ring array has 56 transmit elements and 48 receive elements on two separate concentric annular rings. The IC incorporates a 25-V pulser for each transmitter and a low-noise capacitive transimpedance amplifier (TIA) for each receiver, along with digital control and smart power management. The final shape of the silicon chip is a 1.5-mm-diameter donut with a 430-μm center hole for a guide wire. The overall front-end system requires only 13 external connections and provides 4 parallel RF outputs while consuming an average power of 20 mW. We measured RF A-scans from the integrated single- chip array which show full functionality at 20.1 MHz with 43% fractional bandwidth. We also tested and demonstrated the image quality of the system on a wire phantom and an ex vivo chicken heart sample. The measured axial and lateral point resolutions are 92 μm and 251 μm, respectively. We successfully acquired volumetric imaging data from the ex vivo chicken heart at 60 frames per second without any signal averaging. These demonstrative results indicate that single-chip CMUT-on-CMOS systems have the potential to produce realtime volumetric images with image quality and speed suitable for catheter-based clinical applications.

16 kanałowy układ sterownika silników krokowych przesuwników fazy RF 1,3 GHz zasilających nadprzewodzące wnęki rezonansowe lasera na swobodnych elektronach FLASH

CERN Document Server

Kielar, E; Wierba, W

2011-01-01

The LLRF (Low Level Radio Frequency) System has to control also the RF coupling with the FLASH accelerator cavities. It is done remotely by controlling RF Phase Shifters driven by step motors. It was necessary to design the multichannel stepper motors driver controlled via Ethernet. The driver is built on the basis of low-power CMOS 8-bit AVR RISC microcontroller and the MODBUS protocol. The 16 drivers integrated on a single PCB allow for controlling 16 RF (Radio Frequency) Phase Shifters for the proper adjustment of the waveguides to cavities coupling.

First Results of the Sideband-Separating Mixer for ALMA Band 9 Upgrade

NARCIS (Netherlands)

Khudchenko, Andrey; Hesper, Ronald; Baryshev, Andrey; Mena, F. Patricio; Gerlofma, Gerrit; Zijlstra, Tony; Klapwijk, Teun M.; Kooi, Jacob W.; Spaans, Marco

2011-01-01

Last year, the design and implementation details of a new modular sideband-separating mixer block, intended as an upgrade for the current single-ended ALMA Band 9 mixers, were presented at this conference. In high-frequency observation bands like ALMA Band 9 (600-720 GHz), which is strongly

VAPOR MIXER FOR GELATINIZATION OF STARCH IN LIQUEFYING STATION

Directory of Open Access Journals (Sweden)

V. V. Ananskikh

2015-01-01

Full Text Available Starch hydrolysis is main technological process in production of starch sweeteners. Acid hydrolysis of starch using hydrochloric acid is carried out very fast but it does not allow to carry out full hydrolysis and to produce products with given carbohydrate composition. Bioconversion of starch allows to eliminate these limitations. At production of starch sweeteners from starch using enzymes starch hydrolysis is carried out in two stages At first starch – starch liquefaction the rapid increase of viscosity takes place which requires intensive mixing. Liquefying station consists of jet-cooker, holder, pressure regulator and evaporator. Jet-cooker of starch is its main part, starch is quickly turns into soluble (gelatinized state and it is partially liquefied by injection of starch suspension by flow of water vapor under pressure not less than 0,8 MPa. Heat and hydraulic calculation were carried out in order to determine constructive sizes of mixer for cooking of starch. The main hydraulic definable parameters are pressure drop in mixer, vapor pressure at mixer inlet, daily capacity of station by glucose syrup M, product consumption (starch suspension, diameter of inlet section of vapor nozzle. The goal of calculation was to determine vapor consumption M1, diameter d2 of outlet section of confuser injector, length l2 of gelatinization section. For heat calculation there was used Shukhov’s formula along with heat balance equation for gelatinization process. The numerical solution obtained with adopted assumptions given in applied mathematical package MATHCAD, for M = 50 t/day gives required daily vapor consumption M1 = 14,446 т. At hydraulic calculation of pressure drop in mixer there was used Bernoulli’s theorem. Solving obtained equations using MATHCAD found diameter of outlet section of consufer d2 = 0,023 м, vapor pressure inside of mixer p2 = 3,966·105 Па, l2 = 0,128 м. Developed method of calculation is used to determine

Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

Science.gov (United States)

Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

2015-02-01

We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

Microelectronic test structures for CMOS technology

CERN Document Server

Ketchen, Mark B

2011-01-01

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

CERN Document Server

Wang, T.

2017-01-01

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

Turbofan forced mixer lobe flow modeling. 1: Experimental and analytical assessment

Science.gov (United States)

Barber, T.; Paterson, R. W.; Skebe, S. A.

1988-01-01

A joint analytical and experimental investigation of three-dimensional flowfield development within the lobe region of turbofan forced mixer nozzles is described. The objective was to develop a method for predicting the lobe exit flowfield. In the analytical approach, a linearized inviscid aerodynamical theory was used for representing the axial and secondary flows within the three-dimensional convoluted mixer lobes and three-dimensional boundary layer analysis was applied thereafter to account for viscous effects. The experimental phase of the program employed three planar mixer lobe models having different waveform shapes and lobe heights for which detailed measurements were made of the three-dimensional velocity field and total pressure field at the lobe exit plane. Velocity data was obtained using Laser Doppler Velocimetry (LDV) and total pressure probing and hot wire anemometry were employed to define exit plane total pressure and boundary layer development. Comparison of data and analysis was performed to assess analytical model prediction accuracy. As a result of this study a planar mixed geometry analysis was developed. A principal conclusion is that the global mixer lobe flowfield is inviscid and can be predicted from an inviscid analysis and Kutta condition.

A Formal Model of Identity Mixer

DEFF Research Database (Denmark)

Camenisch, Jan; Mödersheim, Sebastian Alexander; Sommer, Dieter

2010-01-01

Identity Mixer is an anonymous credential system developed at IBM that allows users for instance to prove that they are over 18 years old without revealing their name or birthdate. This privacy-friendly tech- nology is realized using zero-knowledge proofs. We describe a formal model of Identity...

Large area CMOS image sensors

International Nuclear Information System (INIS)

Turchetta, R; Guerrini, N; Sedgwick, I

2011-01-01

CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

Submersible canned motor mixer pump

International Nuclear Information System (INIS)

Guardiani, R.F.; Pollick, R.D.

1997-01-01

A mixer pump is described used in a waste tank for mobilizing high-level radioactive liquid waste having a column assembly containing power cables, a motor housing with electric motor means which includes a stator can of a stator assembly and a rotor can of a rotor assembly, and an impeller assembly with an impeller connected to a shaft of the rotor assembly. The column assembly locates the motor housing with the electric motor means adjacent to the impeller which creates an hydraulic head, and which forces the liquid waste into the motor housing to cool the electric motor means and to lubricate radial and thrust bearing assemblies. Hard-on-hard bearing surfaces of the bearing assemblies and a ring assembly between the impeller and electric motor means act to grind down large particles in the liquid waste flow. These larger particles are received in slots in the static bearing members of the radial bearing assemblies. Only solid waste particles smaller than the clearances in the system can pass there through, thereby resisting damage to and the interruption of the operation of the mixer pump. 10 figs

Deviations from mass transfer equilibrium and mathematical modeling of mixer-settler contactors

International Nuclear Information System (INIS)

Beyerlein, A.L.; Geldard, J.F.; Chung, H.F.; Bennett, J.E.

1980-01-01

This paper presents the mathematical basis for the computer model PUBG of mixer-settler contactors which accounts for deviations from mass transfer equilibrium. This is accomplished by formulating the mass balance equations for the mixers such that the mass transfer rate of nuclear materials between the aqueous and organic phases is accounted for. 19 refs

AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

Science.gov (United States)

Yngvesson, K. S.; Yang, J.-X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K. M.

1992-01-01

The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

MICROFLUIDIC MIXERS FOR THE INVESTIGATION OF PROTEIN FOLDING USING SYNCHROTRON RADIATION CIRCULAR DICHROISM SPECTROSCOPY

International Nuclear Information System (INIS)

Kane, A; Hertzog, D; Baumgartel, P; Lengefeld, J; Horsley, D; Schuler, B; Bakajin, O

2006-01-01

The purpose of this study is to design, fabricate and optimize microfluidic mixers to investigate the kinetics of protein secondary structure formation with Synchrotron Radiation Circular Dichroism (SRCD) spectroscopy. The mixers are designed to rapidly initiate protein folding reaction through the dilution of denaturant. The devices are fabricated out of fused silica, so that they are transparent in the UV. We present characterization of mixing in the fabricated devices, as well as the initial SRCD data on proteins inside the mixers

A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

DEFF Research Database (Denmark)

Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.

2015-01-01

and a miniaturized Marchand balun on the LO port. Experimental results shows a conversion gain of +4 dB at 10.5 GHz with an LO drive level of 15 dBm. The LO-IF and RF-IF isolation is better than 36 dB and 26 dB, respectively, in the entire band of operation. The input referred 1 dB compression point is better than...... -11 dBm. The IIP2 is +13 dBm at a supply voltage of 3 V and +16.5 dBm at a supply voltage of 6 V. The measured noise figure is found to be ~6.5 dB at 10.5 GHz....

A compact D-band monolithic APDP-based sub-harmonic mixer

Science.gov (United States)

Zhang, Shengzhou; Sun, Lingling; Wang, Xiang; Wen, Jincai; Liu, Jun

2017-11-01

The paper presents a compact D-band monolithic sub-harmonic mixer (SHM) with 3 μm planar hyperabrupt schottky-varactor diodes offered by 70 nm GaAs mHEMT technology. According to empirical equivalent-circuit models, a wide-band large signal equivalent circuit model of the diode is proposed. Based on the extracted model, the mixer is implemented and optimized with a shunt-mounted anti-parallel diode pair (APDP) to fulfill the sub-harmonic mixing mechanism. Furthermore, a modified asymmetric three-transmission-line coupler is devised to achieve high-level coupling and minimize the chip size. The measured results show that the conversion gain varies between -13.9 dB and -17.5 dB from 110 GHz to 145 GHz, with a local oscillator (LO) power level of 14 dBm and an intermediate frequency (IF) of 1 GHz. The total chip size including probe GSG pads is 0.57 × 0.68mm2. In conclusion, the mixer exhibits outstanding figure-of-merits.

Extraction of indium from sulphate solutions with D2EHPA solutions using static mixers

International Nuclear Information System (INIS)

Nacevski, N.; Poposka, F.; Nikov, B.

1995-01-01

The possible use of static mixers as a reactor for the extraction of indium from sulphate solutions was investigated. The experimental work was focused on ''Kenics'' type static mixers, since these were found simplest and cheapest among a variety of models, and yet yielded acceptable preliminary results with low pressure drop along the reactor. A series of experiments was carried out in a stirred continuous flow reactor to compare the results. It was found that under certain (different) conditions both reactors perform satisfactorily. The energy consumption of a static mixer is of the same order of magnitude as that of a stirred vessel. The most significant achievement of the experimental work is establishing that the residence time in a static mixer is about two orders of magnitude less than that in a stirred reactor. (orig.)

A low-jitter RF PLL frequency synthesizer with high-speed mixed-signal down-scaling circuits

International Nuclear Information System (INIS)

Tang Lu; Wang Zhigong; Xue Hong; He Xiaohu; Xu Yong; Sun Ling

2010-01-01

A low-jitter RF phase locked loop (PLL) frequency synthesizer with high-speed mixed-signal down-scaling circuits is proposed. Several techniques are proposed to reduce the design complexity and improve the performance of the mixed-signal down-scaling circuit in the PLL. An improved D-latch is proposed to increase the speed and the driving capability of the DMP in the down-scaling circuit. Through integrating the D-latch with 'OR' logic for dual-modulus operation, the delays associated with both the 'OR' and D-flip-flop (DFF) operations are reduced, and the complexity of the circuit is also decreased. The programmable frequency divider of the down-scaling circuit is realized in a new method based on deep submicron CMOS technology standard cells and a more accurate wire-load model. The charge pump in the PLL is also realized with a novel architecture to improve the current matching characteristic so as to reduce the jitter of the system. The proposed RF PLL frequency synthesizer is realized with a TSMC 0.18-μm CMOS process. The measured phase noise of the PLL frequency synthesizer output at 100 kHz offset from the center frequency is only -101.52 dBc/Hz. The circuit exhibits a low RMS jitter of 3.3 ps. The power consumption of the PLL frequency synthesizer is also as low as 36 mW at a 1.8 V power supply. (semiconductor integrated circuits)

Mixer pump test plan for double-shell tank AZ-101. Revision 1

Energy Technology Data Exchange (ETDEWEB)

Symons, G.A.

1996-02-01

Westinghouse Hanford Company has undertaken the task to develop and demonstrate a method of retrieval for double-shell tank waste. Mixer pumps were chosen as the planned method of retrieval for DSTs, based on engineering technology studies, past experience with hydraulic sluicing at the Hanford Site, and experience with mixer pumps at the Westinghouse Savannah River Site.

Mixer pump test plan for double-shell tank AZ-101. Revision 1

International Nuclear Information System (INIS)

Symons, G.A.

1996-02-01

Westinghouse Hanford Company has undertaken the task to develop and demonstrate a method of retrieval for double-shell tank waste. Mixer pumps were chosen as the planned method of retrieval for DSTs, based on engineering technology studies, past experience with hydraulic sluicing at the Hanford Site, and experience with mixer pumps at the Westinghouse Savannah River Site

A monolithic RF transceiver for DC-OFDM UWB

International Nuclear Information System (INIS)

Chen Yunfeng; Li Wei; Fu Haipeng; Gao Ting; Chen Danfeng; Zhou Feng; Cai Deyun; Li Dan; Niu Yangyang; Zhou Hanchao; Zhu Ning; Li Ning; Ren Junyan

2012-01-01

This paper presents a first monolithic RF transceiver for DC-OFDM UWB applications. The proposed direct-conversion transceiver integrates all the building blocks including two receiver (Rx) cores, two transmitter (Tx) cores and a dual-carrier frequency synthesizer (DC-FS) as well as a 3-wire serial peripheral interface (SPI) to set the operating status of the transceiver. The ESD-protected chip is fabricated by a TSMC 0.13-μm RF CMOS process with a die size of 4.5 × 3.6 mm 2 . The measurement results show that the wideband Rx achieves an NF of 5–6.2 dB, a max gain of 76–84 dB with 64-dB variable gain, an in-/out-of-band IIP3 of −6/+4 dBm and an input loss S 11 of < −10 in all bands. The Tx achieves an LOLRR/IMGRR of −34/-33 dBc, a typical OIP3 of +6 dBm and a maximum output power of −5 dBm. The DC-FS outputs two separate carriers simultaneously with an inter-band hopping time of < 1.2 ns. The full chip consumes a maximum current of 420 mA under a 1.2-V supply. (semiconductor integrated circuits)

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

Electrical Interconnections Through CMOS Wafers

DEFF Research Database (Denmark)

Rasmussen, Frank Engel

2003-01-01

Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

CMOS test and evaluation a physical perspective

CERN Document Server

Bhushan, Manjul

2015-01-01

This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

A Multipath Technique for Cancelling Harmonics and Sidebands in a Wideband Power Upconverter

NARCIS (Netherlands)

Shrestha, R.; Mensink, E.; Klumperink, Eric A.M.; Wienk, Gerhardus J.M.; Nauta, Bram

2006-01-01

Switching mixers are power-efficient but produce unwanted harmonics and sidebands. A multipath technique to clean up the spectrum using digital circuits and mixers, but no filters, is applied to a 0.13µm CMOS power upconverter. The circuit delivers 8mW from dc to 2.4GHz with 11% drain efficiency,

Study on hydrodynamics and mass transfer of the critically safe multistage mixer-settler

International Nuclear Information System (INIS)

Zhang Weibo; Jiao Rongzhou; Liu Bingren

1992-08-01

The study on structure of critically safe multistage mixer-settler for the extraction process of high enriched uranium and plutonium has been completed. The mixer-settler has simple structure, good critical safety, flexibility in operation (O/A from 0.5 to 5) and high extraction efficiency (E x > 90%). These performances have been proved in the hydrodynamics and mass transfer experiments at a three stages cascade mixer-settler. Based on the others experience, a trapezoidal impeller combined with half-open turbine is developed which has stronger pumping and well mixing function at low rotating speed. The optimal rotating speed is 250 to 280 r/min obtained by experiments

Study on installation of the submersible mixer

International Nuclear Information System (INIS)

Tian, F; Shi, W D; He, X H; Xu, Y H; Jiang, H

2013-01-01

Study on installation of the submersible mixer for sewage treatment has been limited. In this article, large-scale computational fluid dynamics software FLUENT6.3 was adopted. ICEM software was used to build an unstructured grid of sewage treatment pool. After that, the sewage treatment pool was numerically simulated by dynamic coordinate system technology and RNG k-ε turbulent model and PIOS algorithm. Agitation pools on four different installation location cases were simulated respectively, and the external characteristic of the submersible mixer and the velocity cloud of the axial section were respectively comparatively analyzed. The best stirring effect can be reached by the installation location of case C, which is near the bottom of the pool 600 mm and blade distance the bottom at least for 200 mm wide and wide edge and narrow edge distance by 4:3. The conclusion can guide the engineering practice

Design of a mixer for the thrust-vectoring system on the high-alpha research vehicle

Science.gov (United States)

Pahle, Joseph W.; Bundick, W. Thomas; Yeager, Jessie C.; Beissner, Fred L., Jr.

1996-01-01

One of the advanced control concepts being investigated on the High-Alpha Research Vehicle (HARV) is multi-axis thrust vectoring using an experimental thrust-vectoring (TV) system consisting of three hydraulically actuated vanes per engine. A mixer is used to translate the pitch-, roll-, and yaw-TV commands into the appropriate TV-vane commands for distribution to the vane actuators. A computer-aided optimization process was developed to perform the inversion of the thrust-vectoring effectiveness data for use by the mixer in performing this command translation. Using this process a new mixer was designed for the HARV and evaluated in simulation and flight. An important element of the Mixer is the priority logic, which determines priority among the pitch-, roll-, and yaw-TV commands.

Absorbed dose by a CMOS in radiotherapy

International Nuclear Information System (INIS)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

2011-10-01

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Neutron absorbed dose in a pacemaker CMOS

International Nuclear Information System (INIS)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

2012-01-01

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2012-06-15

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

2013-01-01

In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

Absorbed dose by a CMOS in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-10-15

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Wideband CMOS receivers

CERN Document Server

Oliveira, Luis

2015-01-01

This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

Heat transfer and the continuous production of hydroxypropyl starch in a static mixer reactor

NARCIS (Netherlands)

Lammers, Gerard; Beenackers, Antonie A. C. M.

1994-01-01

A novel continuous reactor for the chemical derivation of aqueous starch solutions based on static mixers is proposed. Both the experimentally observed axial and radial temperature gradients in the static mixer could be accurately described by a pseudohomogeneous two-dimensional heat transfer (PTHT)

A general numerical analysis program for the superconducting quasiparticle mixer

Science.gov (United States)

Hicks, R. G.; Feldman, M. J.; Kerr, A. R.

1986-01-01

A user-oriented computer program SISCAP (SIS Computer Analysis Program) for analyzing SIS mixers is described. The program allows arbitrary impedance terminations to be specified at all LO harmonics and sideband frequencies. It is therefore able to treat a much more general class of SIS mixers than the widely used three-frequency analysis, for which the harmonics are assumed to be short-circuited. An additional program, GETCHI, provides the necessary input data to program SISCAP. The SISCAP program performs a nonlinear analysis to determine the SIS junction voltage waveform produced by the local oscillator. The quantum theory of mixing is used in its most general form, treating the large signal properties of the mixer in the time domain. A small signal linear analysis is then used to find the conversion loss and port impedances. The noise analysis includes thermal noise from the termination resistances and shot noise from the periodic LO current. Quantum noise is not considered. Many aspects of the program have been adequately verified and found accurate.

Russian Pulsating Mixer Pump Deployment in the Gunite and Associated Tanks at ORNL

International Nuclear Information System (INIS)

Hatchell, Brian K.; Lewis, Ben; Johnson, Marshall A.; Randolph, J. G.

2001-01-01

In FY 1998, Pulsating Mixer Pump (PMP) technology, consisting of a jet mixer powered by a reciprocating air supply, was selected for deployment in one of the Gunite and Associated Tanks at Oak Ridge National Laboratory (ORNL) to mobilize settled solids. The pulsating mixer pump technology was identified during FY 1996 and FY 1997 technical exchanges between the U.S. Department of Energy (DOE) Tanks Focus Area Retrieval and Closure program, the DOE Environmental Management International Programs, and delegates from Russia as a promising technology that could be implemented in the DOE complex. During FY 1997, the pulsating mixer pump technology, provided by the Russian Integrated Mining Chemical Company, was tested at Pacific Northwest National Laboratory (PNNL) to observe its ability to suspend settled solids. Based on the results of this demonstration, ORNL and DOE staff determined that a modified pulsating mixer pump would meet project needs for remote sludge mobilization of Gunite tank sludge and reduce the cost of operation and maintenance of more expensive mixing systems. The functions and requirements of the system were developed by combining the results and recommendations from the pulsating mixer pump demonstration at PNNL with the requirements identified by staff at ORNL involved with the remediation of the Gunite and Associated Tanks. The PMP is comprised of a pump chamber, check valve, a working gas supply pipe, a discharge manifold, and four jet nozzles. The pump uses two distinct cycles, fill and discharge, to perform its mixing action. During the fill cycle, vacuum is applied to the pump chamber by an eductor, which draws liquid into the pump. When the liquid level inside the chamber reaches a certain level, the chamber is pressurized with compressed air to discharge the liquid through the jet nozzles and back into the tank to mobilize sludge and settled solids.

Core-shell magnetic nanoparticles for on-chip RF inductors

KAUST Repository

Koh, Kisik

2013-01-01

FeNi3 based core-shell magnetic nanoparticles are demonstrated as the magnetic core material for on-chip, radio frequency (RF) inductors. FeNi3 nanoparticles with 50-150 nm in diameter with 15-20 nm-thick SiO2 coating are chemically synthesized and deposited on a planar inductor as the magnetic core to enhance both inductance (L) and quality factor (Q) of the inductor. Experimentally, the ferromagnetic resonant frequency of the on-chip inductors based on FeNi3 core-shell nanoparticles has been shown to be over several GHz. A post-CMOS process has been developed to integrate the magnetic nanoparticles to a planar inductor and inductance enhancements up to 50% of the original magnitude with slightly enhanced Q-factor up to 1 GHz have been achieved. © 2013 IEEE.

A monolithic 180 nm CMOS dosimeter for wireless In Vivo Dosimetry

International Nuclear Information System (INIS)

Villani, E.G.; Crepaldi, M.; DeMarchi, D.; Gabrielli, A.; Khan, A.; Pikhay, E.; Roizin, Y.; Rosenfeld, A.; Zhang, Z.

2016-01-01

The design, fabrication and testing of a novel monolithic system-on-chip dosimeter fabricated in a standard 180 nm CMOS technology is described. The device, implementing a radiation sensor and an RF transmitter, is proposed to address the need for real-time In Vivo Dosimetry (IVD) of radiation during Linac radiotherapy sessions. Owing to its small size, of approximately 1 mm"3, such solution could be made in-body implantable and, as such, provide a much-enhanced high-resolution, real-time dose measurement to improve Quality Assurance (QA) in radiation therapy. The device transmits the related information on dose of radiation wirelessly to a remote receiver operating in the Medical Implant Communication Service (MICS) band. Comprehensive description of the various phases of this project, including the development of the radiation sensors and integrated RF transmitter to perform the readout, along with the final test results using a radiation beam, will be given. - Highlights: • A Monolithic Dosimeter for real time dosimetry during radiotherapy is proposed. • The proposed device is 1 mm3 in size and could potentially be body implantable. • The device includes a radiation sensor and RF readout, operating in the MICS band. • Detailed tests have been performed under radiation beam in a clinical environment. • Reported sensitivity is 1 cGy over 50 Gy, with an accuracy of better than 3%.

Flow optimisation of a biomass mixer; Stroemungstechnische Optimierung eines Biomasse-Ruehrwerks

Energy Technology Data Exchange (ETDEWEB)

Casartelli, E.; Waser, R. [Hochschule fuer Technik und Architektur Luzern (HTA), Horw (Switzerland); Fankhauser, H. [Fankhauser Maschinenfabrik, Malters (Switzerland)

2007-03-15

This illustrated final report for the Swiss Federal Office of Energy (SFOE) reports on the optimisation of a mixing system used in biomass reactors. Aim of this work was to improve the fluid dynamic qualities of the mixer in order to increase its efficiency while, at the same time, maintaining robustness and low price. Investigative work performed with CFD (Computational Fluid Dynamics) is reported on. CFD is quoted by the authors as being very effective in solving such optimisation problems as it is suited to flows that are not easily accessible for analysis. Experiments were performed on a fermenter / mixer model in order to confirm the computational findings. The results obtained with two and three-dimensional simulations are presented and discussed, as are those resulting from the tests with the 1:10 scale model of a digester. Initial tests with the newly developed mixer-propellers in a real-life biogas installation are reported on and further tests to be made are listed.

A highly sensitive RF-to-DC power converter with an extended dynamic range

KAUST Repository

Almansouri, Abdullah Saud Mohammed

2017-10-24

This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross-coupled rectifier, the proposed design offers 3.2× the dynamic range. It is also highly sensitive and requires −18 dBm of input power to produce a 1 V-output voltage when operating with a 100 kΩ load. Furthermore, the proposed design offers an open circuit sensitivity of −23.4 dBm and a peak power conversion efficiency of 67%.

Sideband Separating Mixer for 600-720 GHz

NARCIS (Netherlands)

Khudchenko, Andrey; Hesper, Ronald; Barychev, Andrey; Gerlofma, Gerrit; Mena, Patricio; Zijlstra, Tony; Klapwijk, Teun; Spaans, Marco; Kooi, Jacob W.; Zhang, C; Zhang, XC; Siegel, PH; He, L; Shi, SC

2010-01-01

The ALMA Band 9 receiver cartridge (600-720 GHz) based on Dual Sideband (DSB) superconductor-insulator-superconductor (SIS) mixer is currently in full production. In the case of spectral line observations, the integration time to reach a certain signal-to-noise level can be reduced by about a factor

A 1 MHz BW 34.2 fJ/step Continuous Time Delta Sigma Modulator With an Integrated Mixer for Cardiac Ultrasound.

Science.gov (United States)

Kaald, Rune; Eggen, Trym; Ytterdal, Trond

2017-02-01

Fully digitized 2D ultrasound transducer arrays require one ADC per channel with a beamforming architecture consuming low power. We give design considerations for per-channel digitization and beamforming, and present the design and measurements of a continuous time delta-sigma modulator (CTDSM) for cardiac ultrasound applications. By integrating a mixer into the modulator frontend, the phase and frequency of the input signal can be shifted, thereby enabling both improved conversion efficiency and narrowband beamforming. To minimize the power consumption, we propose an optimization methodology using a simulated annealing framework combined with a C++ simulator solving linear electrical networks. The 3rd order single-bit feedback type modulator, implemented in a 65 nm CMOS process, achieves an SNR/SNDR of 67.8/67.4 dB across 1 MHz bandwidth consuming 131 [Formula: see text] of power. The achieved figure of merit of 34.2 fJ/step is comparable with state-of-the-art feedforward type multi-bit designs. We further demonstrate the influence to the dynamic range when performing dynamic receive beamforming on recorded delta-sigma modulated bit-stream sequences.

A CMOS Morlet Wavelet Generator

Directory of Open Access Journals (Sweden)

A. I. Bautista-Castillo

2017-04-01

Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

CMOS image sensors: State-of-the-art

Science.gov (United States)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

All-CMOS night vision viewer with integrated microdisplay

Science.gov (United States)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

Criticality calculation method for mixer-settlers

International Nuclear Information System (INIS)

Gonda, Kozo; Aoyagi, Haruki; Nakano, Ko; Kamikawa, Hiroshi.

1980-01-01

A new criticality calculation code MACPEX has been developed to evaluate and manage the criticality of the process in the extractor of mixer-settler type. MACPEX can perform the combined calculation with the PUREX process calculation code MIXSET, to get the neutron flux and the effective multiplication constant in the mixer-settlers. MACPEX solves one-dimensional diffusion equation by the explicit difference method and the standard source-iteration technique. The characteristics of MACPEX are as follows. 1) Group constants of 4 energy groups for the 239 Pu-H 2 O solution, water, polyethylene and SUS 28 are provided. 2) The group constants of the 239 Pu-H 2 O solution are given by the functional formulae of the plutonium concentration, which is less than 50 g/l. 3) Two boundary conditions of the vacuum condition and the reflective condition are available in this code. 4) The geometrical bucklings can be calculated for a certain energy group and/or region by using the three dimentional neutron flux profiles obtained by CITATION. 5) The buckling correction search can be carried out in order to get a desired k sub(eff). (author)

Submillisecond mixing in a continuous-flow, microfluidic mixer utilizing mid-infrared hyperspectral imaging detection.

Science.gov (United States)

Kise, Drew P; Magana, Donny; Reddish, Michael J; Dyer, R Brian

2014-02-07

We report a continuous-flow, microfluidic mixer utilizing mid-infrared hyperspectral imaging detection, with an experimentally determined, submillisecond mixing time. The simple and robust mixer design has the microfluidic channels cut through a polymer spacer that is sandwiched between two IR transparent windows. The mixer hydrodynamically focuses the sample stream with two side flow channels, squeezing it into a thin jet and initiating mixing through diffusion and advection. The detection system generates a mid-infrared hyperspectral absorbance image of the microfluidic sample stream. Calibration of the hyperspectral image yields the mid-IR absorbance spectrum of the sample versus time. A mixing time of 269 μs was measured for a pD jump from 3.2 to above 4.5 in a D2O sample solution of adenosine monophosphate (AMP), which acts as an infrared pD indicator. The mixer was further characterized by comparing experimental results with a simulation of the mixing of an H2O sample stream with a D2O sheath flow, showing good agreement between the two. The IR microfluidic mixer eliminates the need for fluorescence labeling of proteins with bulky, interfering dyes, because it uses the intrinsic IR absorbance of the molecules of interest, and the structural specificity of IR spectroscopy to follow specific chemical changes such as the protonation state of AMP.

Numerical and Experimental Study on Mixing Performances of Simple and Vortex Micro T-Mixers

Directory of Open Access Journals (Sweden)

Mubashshir Ahmad Ansari

2018-04-01

Full Text Available Vortex flow increases the interface area of fluid streams by stretching along with providing continuous stirring action to the fluids in micromixers. In this study, experimental and numerical analyses on a design of micromixer that creates vortex flow were carried out, and the mixing performance was compared with a simple micro T-mixer. In the vortex micro T-mixer, the height of the inlet channels is half of the height of the main mixing channel. The inlet channel connects to the main mixing channel (micromixer at the one end at an offset position in a fashion that creates vortex flow. In the simple micro T-mixer, the height of the inlet channels is equal to the height of the channel after connection (main mixing channel. Mixing of fluids and flow field have been analyzed for Reynolds numbers in a range from 1–80. The study has been further extended to planar serpentine microchannels, which were combined with a simple and a vortex T-junction, to evaluate and verify their mixing performances. The mixing performance of the vortex T-mixer is higher than the simple T-mixer and significantly increases with the Reynolds number. The design is promising for efficiently increasing mixing simply at the T-junction and can be applied to all micromixers.

Method of achieving ultra-wideband true-time-delay beam steering for active electronically scanned arrays

Energy Technology Data Exchange (ETDEWEB)

Loui, Hung; Brock, Billy C.

2016-10-25

The various embodiments presented herein relate to beam steering an array antenna by modifying intermediate frequency (IF) waveforms prior to conversion to RF signals. For each channel, a direct digital synthesis (DDS) component can be utilized to generate a waveform or modify amplitude, timing and phase of a waveform relative to another waveform, whereby the generation/modification can be performed prior to the IF input port of a mixer on each channel. A local oscillator (LO) signal can be utilized to commonly drive each of the mixers. After conversion at the RF output port of each of the mixers, each RF signal can be transmitted by a respective antenna element in the antenna array. Initiation of transmission of each RF signal can be performed simultaneously at each antenna. The process can be reversed during receive whereby timing, amplitude, and phase of the received can be modified digitally post ADC conversion.

Variation-aware advanced CMOS devices and SRAM

CERN Document Server

Shin, Changhwan

2016-01-01

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

Influence of gas inlet angle on the mixing process in a Venturi mixer

Directory of Open Access Journals (Sweden)

Romańczyk Mathias

2017-01-01

Full Text Available In this paper numerical analysis were performed to investigate the influence of gas inlet angle on mixing process in a Venturi mixer. Performance of an industrial gas engine depends significantly on the quality of mixing air and fuel; therefore, on the homogeneity of the mixture. In addition, there must be a suitable, adapted to the current load of fuel, air ratio. Responsible for this fact, among others, is the mixer located before entering the combustion chamber of the engine. Incorrect mixture proportion can lead to unstable operation of the engine, as well as higher emissions going beyond current environmental standards in the European Union. To validate the simulation the Air-Fuel Ratio (AFR was mathematically calculated for the air-fuel mixture of lean combustion gas engine. In this study, an open source three-dimensional computational fluid dynamics (CFD modelling software OpenFOAM has been used, to investigate and analyse the influence of different gas inlet angles on mixer characteristics and their performances. Attention was focused on the air-fuel ratio changes, pressure loss, as well as improvement of the mixing quality in the Venturi mixer.

Packaging design criteria, transfer and disposal of 102-AP mixer pump

International Nuclear Information System (INIS)

Carlstrom, R.F.

1994-01-01

A mixer pump installed in storage tank 241-AP-102 (102-AP) has failed. This pump is referred to as the 102-AP mixer pump (APMP). The APMP will be removed from 102-AP 1 and a new pump will be installed. The main purpose of the Packaging Design Criteria (PDC) is to establish criteria necessary to design and fabricate a shipping container for the transfer and storage of the APMP from 102-AP. The PDC will be used as a guide to develop a Safety Evaluation for Packaging (SEP)

26 CFR 48.4061-1 - Temporary regulations with respect to floor stock refunds or credits on cement mixers.

Science.gov (United States)

2010-04-01

... stock refunds or credits on cement mixers. 48.4061-1 Section 48.4061-1 Internal Revenue INTERNAL REVENUE... § 48.4061-1 Temporary regulations with respect to floor stock refunds or credits on cement mixers. (a... of tax on motor vehicles) on the sale of a cement mixer after June 30, 1968, and before January 1...

Noise and conversion performance of a high-Tc superconducting Josephson junction mixer at 0.6 THz

Science.gov (United States)

Gao, Xiang; Du, Jia; Zhang, Ting; Guo, Yingjie Jay

2017-11-01

This letter presents both theoretical and experimental investigations on the noise and conversion performance of a high-Tc superconducting (HTS) step-edge Josephson-junction mixer at the frequency of 0.6 THz and operating temperatures of 20-40 K. Based on the Y-factor and U-factor methods, a double-sideband noise temperature of around 1000 K and a conversion gain of -3.5 dB were experimentally obtained at 20 K. At the temperature of 40 K, the measured mixer noise and conversion efficiency are around 2100 K and -10 dB, respectively. The experimental data are in good agreement with the numerical analysis results using the three-port model. A detailed performance comparison with other reported HTS terahertz mixers has confirmed the superior performance of our presented mixer device.

Flux intensification during microfiltration of distillery stillage using a kenics static mixer

Directory of Open Access Journals (Sweden)

Vasić Vesna M.

2017-01-01

Full Text Available The present work studies the effect of operating parameters (pH, feed flow rate, and transmembrane pressure on microfiltration of distillery stillage. Experiments were conducted in the presence of a Kenics static mixer as a turbulence promoter, and its influence on the flux improvement and specific energy consumption was examined. Response surface methodology was used to investigate the effect of selected factors on microfiltration performances. The results showed that response surface methodology is an appropriate model for mathematical presentation of the process. It was found that the use of a static mixer is justified at the feed flow rates higher than 100 L/h. In contrast, the use of a static mixer at low values of feed flow rate and transmembrane pressure has no justification from an economic point of view. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. TR 31002

Drug residues recovered in feed after various feedlot mixer truck cleanout procedures.

Science.gov (United States)

Van Donkersgoed, Joyce; Sit, Dan; Gibbons, Nicole; Ramogida, Caterina; Hendrick, Steve

2010-01-01

A study was conducted to determine the effectiveness of two methods of equipment cleanout, sequencing or flushing, for reducing drug carryover in feedlot mixer trucks. Feed samples were collected from total mixed rations before and after various feed mixer equipment cleanout procedures. Medicated rations contained either 11 ppm of tylosin or 166 or 331 ppm of chlortetracycline. There were no differences between sequencing and flushing or between flushing with dry barley and flushing with barley silage in the median proportion of drug recovered in the next ration. A larger drug reduction was achieved using flush material at a volume of 10 versus 5% of the mixer capacity and mixing the flush material for 3 versus 4 min. Regardless of the drug or prescription concentrations in the total mixed rations or the equipment cleanout procedure used, concentrations of chlortetracycline and tylosin recovered were very low.

Design optimization of radiation-hardened CMOS integrated circuits

International Nuclear Information System (INIS)

1975-01-01

Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

CMOS dot matrix microdisplay

Science.gov (United States)

Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

2011-03-01

Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

Fuel Continuous Mixer ? an Approach Solution to Use Straight Vegetable Oil for Marine Diesel Engines

Directory of Open Access Journals (Sweden)

Đặng Van Uy

2018-03-01

Full Text Available The vegetable oil is well known as green fuel for diesel engines due to its low sunphur content and renewable stock. However, there are some problems raising when vegetable oil is used as fuel for diesel engines such as highly effected by cold weather, lower general efficiency, separation in layer if mixed with diesel oil and so on. To overcome that disadvantiges, the authors propose a new idea that to use a continuous fuel mixer to blend vegetable oil with diesel oil to make so called a mixed fuel supplying to diesel engines inline. In order to ensure a quality of the mixed fuel created by continuous mixer, a homogeneous testing was introduced with believable results. Then, the continuous mixer has been installed into fuel supply system of diesel engine 6LU32 at a lab of Vietnam Maritime University in terms of checking a real operation of the fuel continuous mixer with diesel engine.

On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

Directory of Open Access Journals (Sweden)

Hongyi Mi

2017-03-01

Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

Science.gov (United States)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

The design of the CMOS wireless bar code scanner applying optical system based on ZigBee

Science.gov (United States)

Chen, Yuelin; Peng, Jian

2008-03-01

The traditional bar code scanner is influenced by the length of data line, but the farthest distance of the wireless bar code scanner of wireless communication is generally between 30m and 100m on the market. By rebuilding the traditional CCD optical bar code scanner, a CMOS code scanner is designed based on the ZigBee to meet the demands of market. The scan system consists of the CMOS image sensor and embedded chip S3C2401X, when the two dimensional bar code is read, the results show the inaccurate and wrong code bar, resulted from image defile, disturber, reads image condition badness, signal interference, unstable system voltage. So we put forward the method which uses the matrix evaluation and Read-Solomon arithmetic to solve them. In order to construct the whole wireless optics of bar code system and to ensure its ability of transmitting bar code image signals digitally with long distances, ZigBee is used to transmit data to the base station, and this module is designed based on image acquisition system, and at last the wireless transmitting/receiving CC2430 module circuit linking chart is established. And by transplanting the embedded RTOS system LINUX to the MCU, an applying wireless CMOS optics bar code scanner and multi-task system is constructed. Finally, performance of communication is tested by evaluation software Smart RF. In broad space, every ZIGBEE node can realize 50m transmission with high reliability. When adding more ZigBee nodes, the transmission distance can be several thousands of meters long.

Hydrodynamic study of the rotating cylinder mixer of a laboratory centrifugal extractor

International Nuclear Information System (INIS)

Philipponeau, Yannick.

1979-08-01

As part of a research programme on solvent extraction kinetics the Fontenay-aux-Roses Nuclear Research Centre has undertaken to build a new centrifugal extractor prototype. The work was centred on a hydrodynamic study of the rotating cylinder mixer of the extractor, using a test apparatus specially designed for this purpose. This apparatus was used to determine the flow conditions of a liquid alone in the annular space of the mixer as a function of the working specifications. The existence of several types of flow was established. The stability region of which was determined as a function of different parameters for a number of liquid-liquid systems. The experiments showed in addition that two kinds of dispersion can be obtained, differing by the nature of the continuous phase. This was determined for various parameters of certain liquid-liquid systems. From this research the hydrodynamic behavior of the CEA centrifugal extractor prototype mixer is thus known [fr

Complete Procedure for Fabrication of a Fused Silica Ultrarapid Microfluidic Mixer Used in Biophysical Measurements

Directory of Open Access Journals (Sweden)

Dena Izadi

2017-01-01

Full Text Available In this paper we present a method to fabricate a fused silica microfluidic device by employing low viscosity KMPR photoresists. The resulting device is a continuous-flow microfluidic mixer based on hydrodynamic focusing. The advantages of this new fabrication method compared to the traditional approach using a poly-silicon mask are simplification, and time and cost reduction, while still preserving the quality and the performance of the mixers. This process results in devices in which the focusing channel has an aspect ratio of 10:1. The newly-fabricated mixer is successfully used to observe the folding of the Pin1 WW domain at the microsecond time scale.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal

2012-06-01

In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

Design of the ME-I powder mixer. Report of the design and construction of the powder mixer, according to the safety requisites of the pellets fabrication process

International Nuclear Information System (INIS)

Mariano H, E.

1991-03-01

In order to fulfill the requirements of preparation of powder of UO 2 ; according to procedure P-M-PP-01, rev. 0, for the process of production of pellets, it was designed and manufactured a powders mixer to incorporate the lubricant one (zinc stearate) to the powder of UO 2 . This equipment allows to mix the powder of UO 2 evenly with the one zinc stearate, without forming considerable quantities of fine of UO 2 , besides a sure control for the operators of the process and an easy access to the mixer to inspect the mixture. (Author)

A Standard CMOS Humidity Sensor without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

Fully CMOS-compatible titanium nitride nanoantennas

Energy Technology Data Exchange (ETDEWEB)

Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

2016-02-01

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

Work plan for vibration cable re-route and water flush system modifications for 107-AN mixer pump

International Nuclear Information System (INIS)

Leshikar, G.A.

1995-01-01

A mixer pump (75 horsepower Hazleton submersible) is to be installed in the central pump pit of Double-Shell Tank 241-AN-107 for the Caustic Addition Project. The mixer pump will be used as a platform to inject, mix, and entrain caustic with the waste, in order to bring the waste hydroxyl ion concentration into compliance with Tank Farm operating specifications. Testing of the mixer pump and caustic addition system revealed that the mixer pump's vibration cable picks up electromagnetic interference from the motor power cable during variable speed operation of the pump. Also, it was noted that the mixer pump's water flush system may not be as effective as desired. Ergo this work plan for improving the operation of these mixer pump subsystems. A new vibration cable shall be routed entirely outside the mixer pump support column pipe, up thru a new penetration in the pump mounting flange. The existing penetration in the side of the pipe is to be plugged. Increasing the distance between power and instrument cables may reduce or eliminate electromagnetic interference to the vibration monitor. The mixer pump water flush system shall be modified to allow pressure isolation of individual branches. A header is to be installed on the middle section of the support column. Each branch (there are three) shall contain a solenoid valve (normally open) to control flow into the branch. The solenoid cables shall be routed up thru three new penetrations in the pump mounting flange to a new electrical box mounted on the flange. The existing flush piping to the inlet screen will remain but the continuation of the flush piping to the pump discharge nozzles is to be removed and the tee plugged. New stainless steel tubing is to be run down to the pump discharge nozzles. Pressure isolation of individual branches will maximize the flush system's effectiveness at blasting potential sediment clogs out of the pump discharge nozzles

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-11-15

The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

Nanometer CMOS ICs from basics to ASICs

CERN Document Server

J M Veendrick, Harry

2017-01-01

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

AZ-101 Mixer Pump Demonstration and Tests Data Management Analysis Plan

Energy Technology Data Exchange (ETDEWEB)

DOUGLAS, D.G.

2000-02-22

This document provides a plan for the analysis of the data collected during the AZ-101 Mixer Pump Demonstration and Tests. This document was prepared after a review of the AZ-101 Mixer Pump Test Plan (Revision 4) [1] and other materials. The plan emphasizes a structured and well-ordered approach towards handling and examining the data. This plan presumes that the data will be collected and organized into a unified body of data, well annotated and bearing the date and time of each record. The analysis of this data will follow a methodical series of steps that are focused on well-defined objectives. Section 2 of this plan describes how the data analysis will proceed from the real-time monitoring of some of the key sensor data to the final analysis of the three-dimensional distribution of suspended solids. This section also identifies the various sensors or sensor systems and associates them with the various functions they serve during the test program. Section 3 provides an overview of the objectives of the AZ-101 test program and describes the data that will be analyzed to support that test. The objectives are: (1) to demonstrate that the mixer pumps can be operated within the operating requirements; (2) to demonstrate that the mixer pumps can mobilize the sludge in sufficient quantities to provide feed to the private contractor facility, and (3) to determine if the in-tank instrumentation is sufficient to monitor sludge mobilization and mixer pump operation. Section 3 also describes the interim analysis that organizes the data during the test, so the analysis can be more readily accomplished. Section 4 describes the spatial orientation of the various sensors in the tank. This section is useful in visualizing the relationship of the Sensors in terms of their location in the tank and how the data from these sensors may be related to the data from other sensors. Section 5 provides a summary of the various analyses that will be performed on the data during the test

AZ-101 Mixer Pump Demonstration and Tests: Data Management (Analysis) Plan

International Nuclear Information System (INIS)

DOUGLAS, D.G.

2000-01-01

This document provides a plan for the analysis of the data collected during the AZ-101 Mixer Pump Demonstration and Tests. This document was prepared after a review of the AZ-101 Mixer Pump Test Plan (Revision 4) [1] and other materials. The plan emphasizes a structured and well-ordered approach towards handling and examining the data. This plan presumes that the data will be collected and organized into a unified body of data, well annotated and bearing the date and time of each record. The analysis of this data will follow a methodical series of steps that are focused on well-defined objectives. Section 2 of this plan describes how the data analysis will proceed from the real-time monitoring of some of the key sensor data to the final analysis of the three-dimensional distribution of suspended solids. This section also identifies the various sensors or sensor systems and associates them with the various functions they serve during the test program. Section 3 provides an overview of the objectives of the AZ-101 test program and describes the data that will be analyzed to support that test. The objectives are: (1) to demonstrate that the mixer pumps can be operated within the operating requirements; (2) to demonstrate that the mixer pumps can mobilize the sludge in sufficient quantities to provide feed to the private contractor facility, and (3) to determine if the in-tank instrumentation is sufficient to monitor sludge mobilization and mixer pump operation. Section 3 also describes the interim analysis that organizes the data during the test, so the analysis can be more readily accomplished. Section 4 describes the spatial orientation of the various sensors in the tank. This section is useful in visualizing the relationship of the Sensors in terms of their location in the tank and how the data from these sensors may be related to the data from other sensors. Section 5 provides a summary of the various analyses that will be performed on the data during the test

Robust Control Mixer Method for Reconfigurable Control Design Using Model Matching Strategy

DEFF Research Database (Denmark)

Yang, Zhenyu; Blanke, Mogens; Verhagen, Michel

2007-01-01

A novel control mixer method for recon¯gurable control designs is developed. The proposed method extends the matrix-form of the conventional control mixer concept into a LTI dynamic system-form. The H_inf control technique is employed for these dynamic module designs after an augmented control...... system is constructed through a model-matching strategy. The stability, performance and robustness of the reconfigured system can be guaranteed when some conditions are satisfied. To illustrate the effectiveness of the proposed method, a robot system subjected to failures is used to demonstrate...

Development of a multi-channel horn mixer array for microwave imaging plasma diagnostics

International Nuclear Information System (INIS)

Ito, Naoki; Kuwahara, Daisuke; Nagayama, Yoshio

2015-01-01

Microwave to millimeter-wave diagnostics techniques, such as interferometry, reflectometry, scattering, and radiometry, have been powerful tools for diagnosing magnetically confined plasmas. The resultant measurements have clarified several physics issues, including instability, wave phenomena, and fluctuation-induced transport. Electron cyclotron emission imaging has been an important tool in the investigation of temperature fluctuations, while reflectometry has been employed to measure plasma density profiles and their fluctuations. We have developed a horn-antenna mixer array (HMA), a 50 - 110 GHz 1D antenna array, which can be easily stacked as a 2D array. This article describes an upgrade to the horn mixer array that combines well-characterized mixers, waveguide-to-microstrip line transitions, intermediate frequency amplifiers, and internal local oscillator modules using a monolithic microwave integrated circuit technology to improve system performance. We also report on the use of a multi-channel HMA system. (author)

CMOS-sensors for energy-resolved X-ray imaging

International Nuclear Information System (INIS)

Doering, D.; Amar-Youcef, S.; Deveaux, M.; Linnik, B.; Müntz, C.; Stroth, Joachim; Baudot, J.; Dulinski, W.; Kachel, M.

2016-01-01

Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ''color sensitive' X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors

The Robust Control Mixer Method for Reconfigurable Control Design By Using Model Matching Strategy

DEFF Research Database (Denmark)

Yang, Z.; Blanke, Mogens; Verhagen, M.

2001-01-01

This paper proposes a robust reconfigurable control synthesis method based on the combination of the control mixer method and robust H1 con- trol techniques through the model-matching strategy. The control mixer modules are extended from the conventional matrix-form into the LTI sys- tem form....... By regarding the nominal control system as the desired model, an augmented control system is constructed through the model-matching formulation, such that the current robust control techniques can be usedto synthesize these dynamical modules. One extension of this method with respect to the performance...... recovery besides the functionality recovery is also discussed under this framework. Comparing with the conventional control mixer method, the proposed method considers the recon gured system's stability, performance and robustness simultaneously. Finally, the proposed method is illustrated by a case study...

Feasibility Study on Using Two Mixer Pumps for Tank 241-AY-102 Waste Mixing

International Nuclear Information System (INIS)

Onishi, Yasuo; Wells, Beric E.

2004-01-01

The current waste retrieval plan at Hanford calls for using two mixer pumps to mix the waste stored in double-shell Tank 214-AY-102. The objective of this evaluation was to determine whether two rotating 300-hp mixer pumps placed 22 ft (6.7 m) off-center in the tank could adequately mix the AY-102 waste. The tank currently contains high-level waste that is 248 inches (6.3 m) deep, comprising 62 inches (1.58 m) of sludge and 186 inches (4.72 m) of supernatant liquid (Galbraith and others 2002). Based on the available data, AY-102 waste properties were determined, including the densities of liquid and agglomerated settled solids and crystals, the volume fraction of settled solids, the solid particle size distribution, the liquid and slurry viscosities, and the yield stress in shear (shear strength) of the settled solids layer. To evaluate the likely and bounding cases of AY-102 waste mixing, sludge erosion modeling was performed with a median value of 1,090 Pa (likely condition) and a conservative (more difficult to erode) 97.5 percentile value of 2,230 Pa for shear strength. According to model predictions, the two rotating mixer pumps would erode 89% of the sludge with shear strength of 1,090 Pa. They would erode sludge up to 41 ft (12.5 m) away from the mixer pumps but would not mobilize the bottom 2.5 inches (0.06-m) of sludge or sludge in the areas next to the tank wall, more than 26 ft (7.9 m) away. Once the sludge is mobilized, the solids were predicted to be uniformly suspended within the tank within a 1-vol% concentration variation except those in few inches at the bottom. With shear strength of 2,230 Pa, the two pumps would erode 85% of the sludge, slightly less than the 1,090-Pa shear strength case. In this case, the pump jets would mobilize the sludge up to 38 ft (11.6 m), except the bottom 2.5 inches of sludge. The mixer pumps would also leave the sludge at the tank wall, which is 20 ft or more from the pumps. Similar to the 1,090 Pa case, the solids were

The status of simulation codes for extraction process using mixer-settler

Energy Technology Data Exchange (ETDEWEB)

Byeon, Kee Hoh; Lee, Eil Hee; Kwon, Seong Gil; Kim, Kwang Wook; Yang, Han Beom; Chung, Dong Yong; Lim, Jae Kwan; Shin, Hyun Kyoo; Kim, Soo Ho

1999-10-01

We have studied and analyzed the mixer-settler simulation codes such as three kinds of SEPHIS series, PUBG, and EXTRA.M, which is the most recently developed code. All of these are sufficiently satisfactory codes in the fields of process/device modeling, but it is necessary to formulate the accurate distribution data and chemical reaction mechanism for the aspect of accuracy and reliability. In the aspect of application to be the group separation process, the mixer-settler model of these codes have no problems, but the accumulation and formulation of partitioning and reaction equilibrium data of chemical elements used in group separation process is very important. (author)

Design of an Efficient Turbulent Micro-Mixer for Protein Folding Experiments

Science.gov (United States)

Inguva, Venkatesh; Perot, Blair

2015-11-01

Protein folding studies require the development of micro-mixers that require less sample, mix at faster rates, and still provide a high signal to noise ratio. Chaotic to marginally turbulent micro-mixers are promising candidates for this application. In this study, various turbulence and unsteadiness generation concepts are explored that avoid cavitation. The mixing enhancements include flow turning regions, flow splitters, and vortex shedding. The relative effectiveness of these different approaches for rapid micro-mixing is discussed. Simulations found that flow turning regions provided the best mixing profile. Experimental validation of the optimal design is verified through laser confocal microscopy experiments. This work is support by the National Science Foundation.

Influence of melt mixer on injection molding of thermoset elastomers

Science.gov (United States)

Rochman, Arif; Zahra, Keith

2016-10-01

One of the drawbacks in injection molding is that the plasticizing screw is short such that polymers having high concentrations of additives, such as thermoset elastomers, might not mix homogeneously within the short period of time during the plasticizing stage. In this study, various melt mixers inside the nozzle chamber, together forming a mixing nozzle, were developed. Three different materials were investigated, namely nitrile butadiene rubber (NBR), ethylene propylene-diene monomer (EPDM) and fluorocarbon (FKM). The use of these melt mixers resulted in better homogeneity and properties of the molded parts despite a curing time reduction of 10 s. This was due to the increase in mixing and shearing introduced a higher rate of crosslinking formation in the molded parts.

Wide-bandwidth electron bolometric mixers - A 2DEG prototype and potential for low-noise THz receivers

Science.gov (United States)

Yang, Jian-Xun; Agahi, Farid; Dai, Dong; Musante, Charles F.; Grammer, Wes; Lau, Kei M.; Yngvesson, K. S.

1993-01-01

This paper presents a new type of electron bolometric ('hot electron') mixer. We have demonstrated a 3 order-of-magnitude improvement in the bandwidth compared with previously known types of electron bolometric mixers, by using the two-dimensional electron gas (2DEG) medium at the heterointerface between AlGaAs and GaAs. We have tested both in-house MOCVD-grown material and MBE material, with similar results. The conversion loss (Lc) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that Lc can be decreased to about 10 dB in future devices. Calculated and measured curves of Lc versus P(LO), and I(DC), respectively, agree well. We argue that there are several different configurations of electron bolometric mixers, which will all show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Scale-up of a mixer-settler extractor using a unit operations approach

International Nuclear Information System (INIS)

Lindholm, D.C.; Bautista, R.G.

1976-01-01

The results of scale-up studies on a continuous, multistage horizontal mixer-settler extractor are presented. The chemical and mechanical system involves the separation of lanthanum from a mixture of rare earth chlorides using di(2-ethylhexyl) phosphoric acid as the solvent and dilute HCl as a scrub solution in a bench scale extractor. Each stage has a hold-up of 2.6 l. A single stage unit is utilized for scale-up studies. Results are obtained on four sizes of geometrically similar units, the largest being six times the volume of the original bench size. A unit operations technique is chosen so that mixing and settling can be examined independently. Variables examined include type of continuous phase, flow rate of inlet streams, and power input to the mixer. Inlet flow-rate ratios are kept constant for all tests. Two potential methods of unbaffled pump-mixer scale-up are explored; the maintenance of constant impeller tip speed and constant power input. For the settler, the previously successful method of basing design on constant flow-rate per unit cross-sectional area is used

Analysis of a high-Tc hot-electron superconducting mixer for terahertz applications

International Nuclear Information System (INIS)

Karasik, B.S.; McGrath, W.R.; Gaidis, M.C.

1997-01-01

The prospects of a YBa 2 Cu 3 O 7-δ hot-electron bolometer mixer for a THz heterodyne receiver are discussed. The modeled device is a submicron bridge made from a 10-nm-thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of phonon diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated. The intrinsic conversion efficiency and the noise temperature have been calculated as functions of the device size, local oscillator (LO) power, and ambient temperature. Assuming thermal fluctuations and Johnson noise to be the main sources of noise, a minimum single sideband mixer noise temperature of congruent 2000 K is predicted. For our modeled device the intrinsic conversion loss at an intermediate frequency of 2.5 GHz is less than 10 dB and the required LO power is ∼1 endash 10 μW. copyright 1997 American Institute of Physics

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

Science.gov (United States)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

JPL CMOS Active Pixel Sensor Technology

Science.gov (United States)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Numerical study of agglomerate abrasion in a tumbling mixer

NARCIS (Netherlands)

Thanh Nguyen, [No Value; Willemsz, Tofan; Frijlink, Henderik; Maarschalk, Kees van der Voort

2014-01-01

A numerical simulation using the Discrete Element Method (DEM) was performed to investigate the phenomena concerning the abrasion and breakage of agglomerates in a diffusion powder mixer. Agglomerates were created by defining a single structure of particles with bonds of different strengths using

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa

2017-11-23

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

Investigation of LO-leakage cancellation and DC-offset influence on flicker-noise in X-band mixers

DEFF Research Database (Denmark)

Michaelsen, Rasmus; Johansen, Tom; Tamborg, Kjeld

2012-01-01

This paper describes an investigation on the influences in 1/f noise of LO-leakage and DC-offset cancellation for X-band mixers. Conditions for LO-leakage cancellation and zero DC-offset is derived. Measurements on a double balanced diode mixer shows an improvement in noise figure from 14.3dB to ...

The Media Mixer

DEFF Research Database (Denmark)

Vestergaard, Vitus; Mortensen, Christian Hviid

In recent years many museums have experimented with different approaches to involving users through digital media. We explore how remixing and content sharing can be used as a means for user participation. Remix culture is seen as a culture that allows and encourages the production of derivative...... works; works that are based on already existing works. This cultural practice thrives throughout the Internet, most notably on web2.0 sites like YouTube. The Media Museum has embraced the remix paradigm with the development of an interactive media experience centre called the Media Mixer. Here...... the museum users can produce, deconstruct, reconstruct and finally publish and share digital media content. The media content is created by the user in the museums physical environment, but it can be mixed with material from local or global archives. In that way the gap between the analogue and the digital...

The Media Mixer

DEFF Research Database (Denmark)

Vestergaard, Vitus; Mortensen, Christian Hviid

2011-01-01

content. The media content is created by the user in the museum's physical environment, but it can be mixed with material from web archives. It is the intention that the users learn about media through participatory and creative processes with media where the borders between producing, playing......We explore how remixing and content sharing can be used as a means for user participation in a digital museum age. Remix culture is seen as a culture that allows and encourages the production of derivative works; works that are based on already existing works. This cultural practice thrives...... throughout the Internet, most notably on web 2.0 sites like YouTube. The Media Museum has embraced the remix paradigm with the development of an interactive media experience centre called the Media Mixer. Here the museum users can produce, deconstruct, reconstruct and finally publish and share digital media...

Batch Processing of CMOS Compatible Feedthroughs

DEFF Research Database (Denmark)

Rasmussen, F.E.; Heschel, M.; Hansen, Ole

2003-01-01

. The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

Resistor Extends Life Of Battery In Clocked CMOS Circuit

Science.gov (United States)

Wells, George H., Jr.

1991-01-01

Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

Carbon Nanotube Integration with a CMOS Process

Science.gov (United States)

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

Mixing monoclonal antibody formulations using bottom-mounted mixers: impact of mechanism and design on drug product quality.

Science.gov (United States)

Gikanga, Benson; Chen, Yufei; Stauch, Oliver B; Maa, Yuh-Fun

2015-01-01

Using bottom-mounted mixers, particularly those that are magnetically driven, is becoming increasingly common during the mixing process in pharmaceutical and biotechnology manufacturing because of their associated low risk of contamination, ease of use, and ability to accommodate low minimum mixing volumes. Despite these benefits, the impact of bottom-mounted mixers on biologic drug product is not yet fully understood and is scarcely reported. This study evaluated four bottom-mounted mixers to assess their impact on monoclonal antibody formulations. Changes in product quality (size variants, particles, and turbidity) and impact on process performance (sterile filtration) were evaluated after mixing. The results suggested that mixers that are designed to function with no contact between the impeller and the drive unit are the most favorable and gentle to monoclonal antibody molecules. Designs with contact or a narrow clearance tended to shear and grind the protein and resulted in high particle count in the liquid, which would subsequently foul a filter membrane during sterile filtration using a 0.22 μm pore size filter. Despite particle formation, increases in turbidity of the protein solution and protein aggregation/fragmentation were not detected. Further particle analysis indicated particles in the range of 0.2-2 μm are responsible for filter fouling. A small-scale screening model was developed using two types of magnetic stir bars mimicking the presence or absence of contact between the impeller and drive unit in the bottom-mounted mixers. The model is capable of differentiating the sensitivity of monoclonal antibody formulations to bottom-mounted mixers with a small sample size. This study fills an important gap in understanding a critical bioprocess unit operation. Mixing is an important unit operation in drug product manufacturing for compounding (dilution, pooling, homogenization, etc.). The current trend in adopting disposable bottom-mounted mixers has

Depleted CMOS pixels for LHC proton–proton experiments

International Nuclear Information System (INIS)

Wermes, N.

2016-01-01

While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

Single photon detection and localization accuracy with an ebCMOS camera

Energy Technology Data Exchange (ETDEWEB)

Cajgfinger, T. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Dominjon, A., E-mail: agnes.dominjon@nao.ac.jp [Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France); Barbier, R. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France)

2015-07-01

The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 µm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

Broadband image sensor array based on graphene-CMOS integration

Science.gov (United States)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Cell Sensors for Point-of-Care Diagnostics

Science.gov (United States)

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

CERN Document Server

Ghafar-Zadeh, Ebrahim

2010-01-01

The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

A Sideband-Separating Mixer Upgrade for ALMA Band 9

NARCIS (Netherlands)

Hesper, R.; Gerlofsma, G.; Mena, P.; Spaans, M.; Baryshev, A.

2009-01-01

The ALMA band 9 (600-720 GHz) receiver cartridge, as currently being produced, features two single-ended (dual sideband) SIS mixers in orthogonal polarisations. In the case of spectral line observations in the presence of atmospheric backgound, the integration time to reach a certain desired signal

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

CMOS MEMS capacitive absolute pressure sensor

International Nuclear Information System (INIS)

Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

2013-01-01

This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

A “twisted” microfluidic mixer suitable for a wide range of flow rate applications

KAUST Repository

Sivashankar, Shilpa

2016-06-27

This paper proposes a new “twisted” 3D microfluidic mixer fabricated by a laser writing/microfabrication technique. Effective and efficient mixing using the twisted micromixers can be obtained by combining two general chaotic mixing mechanisms: splitting/recombining and chaotic advection. The lamination of mixer units provides the splitting and recombination mechanism when the quadrant of circles is arranged in a two-layered serial arrangement of mixing units. The overall 3D path of the microchannel introduces the advection. An experimental investigation using chemical solutions revealed that these novel 3D passive microfluidic mixers were stable and could be operated at a wide range of flow rates. This micromixer finds application in the manipulation of tiny volumes of liquids that are crucial in diagnostics. The mixing performance was evaluated by dye visualization, and using a pH test that determined the chemical reaction of the solutions. A comparison of the tornado-mixer with this twisted micromixer was made to evaluate the efficiency of mixing. The efficiency of mixing was calculated within the channel by acquiring intensities using ImageJ software. Results suggested that efficient mixing can be obtained when more than 3 units were consecutively placed. The geometry of the device, which has a length of 30 mm, enables the device to be integrated with micro total analysis systems and other lab-on-chip devices.

A Single-Transistor Active Pixel CMOS Image Sensor Architecture

International Nuclear Information System (INIS)

Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

2012-01-01

A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

Introduction and utilization of mixer-settler for uranium purification

International Nuclear Information System (INIS)

Tri-Murni

2002-01-01

A mixer settler made by Amersham was designed to separate U from the waste arising from 9 9 M o production using enriched U > 93 % 2 35 U as the raw material to be fissioned. The separation is based on liquid-liquid extraction, organic and aqueous phase, with counter current, the solution continuously flows while the two phases are mixed and settled. This equipment consists of two cycles, the first one for separation U from fission products while the second cycle for separating U from Pu. Each cycle consists of 10 extraction stages, 6 scrubbing stages, 12 stripping stages, 1 stages for solvent washing and another 1 stage for solvent conditioning. From the first cycle to the second one is equipped with solvent washing unit so that the solvent can be used continuously. It is also equipped with micro pumps to regulate the suction and emission of the waste and feed thanks of feed and solvent, as well as burette containing the reagent. Ever since the commissioning this mixer settler has been utilized. This equipment can be utilized for U purification from heavy metals using the product of U processing as the feed material by studying the appropriate solution and applicable solvent. The same also will do for U separation from impurities is the waste of fuel production and other wastes solvent. The same also will do for U separation from impurities in the waste of fuel production and other wastes containing U generated from research activities. The centers within BATAN that can utilize this mixer settler are P2BGGN, P2TBDU, P2PLR, P3TkN and P3TM

Self-calibrated humidity sensor in CMOS without post-processing.

Science.gov (United States)

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

International Nuclear Information System (INIS)

Xu Xiangming; Wang Yong; Wang Pengfei; David Wei Zhang; Huang Jingfeng; Yu Han; Qian Wensheng; Zhou Zhengliang; Han Bo

2015-01-01

A laterally diffused metal–oxide–semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS transistors for GSM (global system for mobile communication) application have been fabricated by using 0.35 μm CMOS technologies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency (PAE) is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 : 1 voltage standing wave ratio (VSWR) load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point (P 10dB ). The device ruggedness has been remarkably improved by using the proposed device structure. (paper)

Radiation-hardened bulk CMOS technology

International Nuclear Information System (INIS)

Dawes, W.R. Jr.; Habing, D.H.

1979-01-01

The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

CMOS/SOS processing

Science.gov (United States)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Directory of Open Access Journals (Sweden)

Jose Luis Muñoz-Gamarra

2016-02-01

Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

Simulations of depleted CMOS sensors for high-radiation environments

CERN Document Server

Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

2017-01-01

After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

Effect of mixing time and speed on experimental baking and dough testing with a 200g pin-mixer

Science.gov (United States)

Under mixing or over mixing the dough results in varied experimental loaf volumes. Bread preparation requires a trained baker to evaluate dough development and determine stop points of mixer. Instrumentation and electronic control of the dough mixer would allow for automatic mixing. This study us...

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2018-01-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.

2018-02-27

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

Prevention of CMOS latch-up by gold doping

International Nuclear Information System (INIS)

Dawes, W.R.; Derbenwick, G.F.

1976-01-01

CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Toward CMOS image sensor based glucose monitoring.

Science.gov (United States)

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Comparative evaluation of a two stroke compressed natural gas mixer design using simulation and experimental techniques

Energy Technology Data Exchange (ETDEWEB)

Ramasamy, D.; Bakar, R.A.; Rahim, M.F.; Noor, M.M. [Malaysia Pahang Univ., Pahang (Malaysia). Automotive Focus Group

2008-07-01

A study was conducted in which a two-stroke engine was converted for use with bi-fuel, notably compressed natural gas and gasoline. The excessive by-products generated by two-stroke engine combustion can be attributed to the inefficient combustion process. This prototype uniflow-type single-cylinder engine was equipped with a bi-fuel conversion system. A dedicated mixer was also developed to meter the gaseous fuel through the engine intake system. It was designed to meet air and fuel requirement similar to its gasoline counterpart. The mixer was modeled to obtain optimum orifice diameter using three different sizes of 14, 16 and 18 mm respectively. A standard computational fluid dynamics (CFD) software package was used to simulate the flow. A pressure reading was obtained during the prototype test. The drop in pressure across the venturi was shown to be an important parameter as it determined the actual fuel-air ratio in the actual engine. A good agreement of CFD outputs with that of the experimental outputs was recorded. The experimental technique validated the pressure distribution predicted by CFD means on the effects of the three insert rings in the CNG mixer. The simulation exercise can be used to predict the amount of CNG consumed by the engine. It was concluded that the 14 mm throat ring was best suited for the CNG mixer because it provided the best suction. Once the mixer is tested on a real engine, it will clear any doubts as to whether the throat can function at high engine speeds. 5 refs., 3 tabs., 8 figs.

Quantum noise in a terahertz hot electron bolometer mixer

NARCIS (Netherlands)

Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M.

2010-01-01

We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model

Large Format CMOS-based Detectors for Diffraction Studies

Science.gov (United States)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Large Format CMOS-based Detectors for Diffraction Studies

International Nuclear Information System (INIS)

Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

2013-01-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Handling support for mixer-settlers in hot cells with biological protection

International Nuclear Information System (INIS)

Lobao, Afonso dos Santos Tome; Forbicini, Sergio; Camilo, Ruth Luqueze

1996-01-01

The solvent extraction research facilities of IPEN/CNEN-SP carries out researching work in irradiated materials separation. This installation is provided with two cells with five operating windows, being that, each once of then has a pair of manipulators (master-slave type-MA-11 La Calhene). Solvent extraction research are carried out in acrylic mixer-settlers inside of the shielded cells. These equipment undergo an intense chemical attack which product failures in the acrylic material, so it is necessary to replace them periodically. The developed equipment is able to change the mixer-settlers without its rigidness,, level and the adjustment of the determined coordinates of the mechanical assemblage inside the cell. The definitive implantation of the equipment depends on the final tests on the cells where the fine adjustments will be made. (author)

Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

NARCIS (Netherlands)

Dutta, Satadal

2017-01-01

Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

An unsteady microfluidic T-form mixer perturbed by hydrodynamic pressure

International Nuclear Information System (INIS)

Ma Yanbao; Sun, Chien-Pin; Fields, Michael; Ho, Chih-Ming; Li Yang; Haake, David A; Churchill, Bernard M

2008-01-01

An unsteady microfluidic T-form mixer driven by pressure disturbances was designed and investigated. The performance of the mixer was examined both through numerical simulation and experimentation. Linear Stokes equations were used for these low Reynolds number flows. Unsteady mixing in a micro-channel of two aqueous solutions differing in concentrations of chemical species was described using a convection-dominated diffusion equation. The task was greatly simplified by employing linear superimposition of a velocity field for solving a scalar species concentration equation. Low-order-based numerical codes were found not to be suitable for simulation of a convection-dominated mixing process due to erroneous computational dissipation. The convection-dominated diffusion problem was addressed by designing a numerical algorithm with high numerical accuracy and computational-cost effectiveness. This numerical scheme was validated by examining a test case prior to being applied to the mixing simulation. Parametric analysis was performed using this newly developed numerical algorithm to determine the best mixing conditions. Numerical simulation identified the best mixing condition to have a Strouhal number (St) of 0.42. For a T-junction mixer (with channel width = 196 µm), about 75% mixing can be finished within a mixing distance of less than 3 mm (i.e. 15 channel width) at St = 0.42 for flow with a Reynolds number less than 0.24. Numerical results were validated experimentally by mixing two aqueous solutions containing yellow and blue dyes. Visualization of the flow field under the microscope revealed a high level of agreement between numerical simulation and experimental results

Design of CMOS imaging system based on FPGA

Science.gov (United States)

Hu, Bo; Chen, Xiaolai

2017-10-01

In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

Directory of Open Access Journals (Sweden)

Haitao Li

2016-12-01

Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

E-Beam Effects on CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

2011-01-01

Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

Fabrication of microfluidic mixers with varying topography in glass using the powder-blasting process

International Nuclear Information System (INIS)

Sayah, Abdeljalil; Thivolle, Pierre-Antoine; Parashar, Virendra K; Gijs, Martin A M

2009-01-01

The powder-blasting method is used to fabricate structures with a three-dimensional topography in glass using elastomeric masks. The relation between the mask opening width and the erosion depth is exploited to fabricate microstructures with varying depth in a single micropatterning step. As an application, planar three-dimensional micro-mixers were fabricated, which consist of a repeating convergent microfluidic nozzle structure. Three different designs of the micro-mixers were considered. The mixing of co-flowing laminar streams results from the generation of multiple vortices at the exit of the different convergent nozzles

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

Design of a 0.13-μm CMOS cascade expandable ΣΔ modulator for multi-standard RF telecom systems

Science.gov (United States)

Morgado, Alonso; del Río, Rocío; de la Rosa, José M.

2007-05-01

This paper reports a 130-nm CMOS programmable cascade ΣΔ modulator for multi-standard wireless terminals, capable of operating on three standards: GSM, Bluetooth and UMTS. The modulator is reconfigured at both architecture- and circuit- level in order to adapt its performance to the different standards specifications with optimized power consumption. The design of the building blocks is based upon a top-down CAD methodology that combines simulation and statistical optimization at different levels of the system hierarchy. Transistor-level simulations show correct operation for all standards, featuring 13-bit, 11.3-bit and 9-bit effective resolution within 200-kHz, 1-MHz and 4-MHz bandwidth, respectively.

CMOS-compatible spintronic devices: a review

Science.gov (United States)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

A 6.2 mW 0.024 mm2 fully-passive RF downconverter with 12 dB gain enhancement using MOS parametric amplification

DEFF Research Database (Denmark)

Custódio, J. R.; Bastos, I.; Oliveira, L. B.

2013-01-01

This paper describes a fully-passive discrete-time switched-capacitor RF downconverter with an on-chip oscillator, that combines quadrature mixing and harmonic rejection, designed in a 130 nm digital CMOS technology. By using MOS capacitors (varactors) to perform parametric amplification, it is p......, it is possible to achieve a measured gain enhancement of about 12 dB, together with 21 dB noise figure and more than 5 dBm IIP3. Operating in the VHF-III band, the downconverter core dissipates 6.2 mW and occupies 0.024 mm2....

Small Pixel Hybrid CMOS X-ray Detectors

Science.gov (United States)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

CERN Entrepreneur Mixer | 21 June | Pas perdus

CERN Multimedia

2016-01-01

  CERN Knowledge Transfer group is hosting an Entrepreneur Mixer, an event dedicated to building bridges between CERN innovative entrepreneurs. This will be a unique opportunity to discover business projects initiated by former CERN people, and to see how CERN technology is being exploited by start-up companies. The deadline for registration is Friday, 17 June. For more information, please visit the Indico page of the event: https://indico.cern.ch/event/537167/

Field measurement of mixing degree in coal mixer by later activable tracer method

International Nuclear Information System (INIS)

Yokooji, Makoto; Uemura, Katsumi; Adachi, Syoichi

1975-01-01

Mixing effectiveness in a rotary drum mixer for coke production was examined. Though the method to use the dispersion of characteristic values such as ash content or volatile components is common for measuring the mixing effectiveness, here the later activable tracer method with radioisotopes was employed, because the former method includes the dispersion of the characteristic values for raw materials themselves, and is poor in detectability. In a preliminary test, the expression for mixing degree was determined, and the tracer nuclide was selected. Coal mixture was irradiated in the TRIGA II reactor of St. Paul University for 4 hours at 100 kW. then further preliminary test was performed for La and Mn which were selected among the typical usable elements listed up by reviewing their γ-spectra. Finally, Mn was adopted by comparing both elements regarding their time required for activation analysis and economy. Manganese concentration originally contained in the coal mixture was 38 ppm. Mixing degree after passing through the coal mixer was 99.8%. The results of the regular test are shown in a table, and indicate that the mixer fully attained its aim. (Wakatsuki, Y.)

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

Science.gov (United States)

Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

2018-04-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CMOS serial link for fully duplexed data communication

Science.gov (United States)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

2017-01-01

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Data.gov (United States)

Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

CMOS Compressed Imaging by Random Convolution

OpenAIRE

Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

2009-01-01

We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

Comparison of the performance of full scale pulsed columns vs. mixer-settlers for uranium solvent extraction

International Nuclear Information System (INIS)

Movsowitz, R.L.; Kleinberger, R.; Buchalter, E.M.; Grinbaum, B.

2000-01-01

A rare opportunity arose to compare the performance of Bateman Pulsed Columns (BPC) vs. Mixer-Settlers at an industrial site, over a long period, when the Uranium Solvent Extraction Plant of WMC at Olympic Dam, South Australia was upgraded. The original plant was operated for years with two trains of 2-stage mixer-settler batteries for the extraction of uranium. When the company decided to increase the yield of the plant, the existing two trains of mixer-settlers for uranium extraction were arranged in series, giving one 4-stage battery. In parallel, two Bateman Pulsed Columns, of the disc-and-doughnut type, were installed to compare the performance of both types of equipment over an extended period.The plant has been operating in parallel for three years and the results show that the performance of the columns is excellent: the extraction yield is similar to the 4 mixer-settlers in series - about 98%, the entrainment of solvent is lower, there are less mechanical failures, less problems with crud, smaller solvent losses and the operation is simpler. The results convinced WMC to install an additional 10 BPC's for the expansion of their uranium plant. These columns were successfully commissioned early 1999. This paper includes quantitative comparison of both types of equipment. (author)

Computational Fluid Dynamics and Experimental Studies of a New Mixing Element in a Static Mixer as a Heat Exchanger

Directory of Open Access Journals (Sweden)

Konopacki Maciej

2015-03-01

Full Text Available The main aim of this work is to study the thermal efficiency of a new type of a static mixer and to analyse the flow and temperature patterns and heat transfer efficiency. The measurements were carried out for the static mixer equipped with a new mixing insert. The heat transfer enhancement was determined by measuring the temperature profiles on each side of the heating pipe as well as the temperature field inside the static mixer. All experiments were carried out with varying operating parameters for four liquids: water, glycerol, transformer oil and an aqueous solution of molasses. Numerical CFD simulations were carried out using the two-equation turbulence k-ω model, provided by ANSYS Workbench 14.5 software. The proposed CFD model was validated by comparing the predicted numerical results against experimental thermal database obtained from the investigations. Local and global convective heat transfer coefficients and Nusselt numbers were detrmined. The relationship between heat transfer process and hydrodynamics in the static mixer was also presented. Moreover, a comparison of the thermal performance between the tested static mixer and a conventional empty tube was carried out. The relative enhancement of heat transfer was characterised by the rate of relative heat transfer intensification.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

International Nuclear Information System (INIS)

Huang Beiju; Zhang Xu; Chen Hongda

2009-01-01

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS technology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capacitance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resistance is 50 Ω, and the average input noise current spectral density is 9.7 pA/√Hz. Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

Energy Technology Data Exchange (ETDEWEB)

Huang Beiju; Zhang Xu; Chen Hongda, E-mail: bjhuang@semi.ac.c [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2009-10-15

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 {mu}m RF CMOS technology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB{center_dot}{Omega} for 1.5 pF photodiode capacitance, with a gain-bandwidth product of 3.4 THz{center_dot}{Omega}. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resistance is 50 {Omega}, and the average input noise current spectral density is 9.7 pA/{radical}Hz. Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

The challenge of sCMOS image sensor technology to EMCCD

Science.gov (United States)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

Micro-mixer/combustor

KAUST Repository

Badra, Jihad Ahmad

2014-09-18

A micro-mixer/combustor to mix fuel and oxidant streams into combustible mixtures where flames resulting from combustion of the mixture can be sustained inside its combustion chamber is provided. The present design is particularly suitable for diffusion flames. In various aspects the present design mixes the fuel and oxidant streams prior to entering a combustion chamber. The combustion chamber is designed to prevent excess pressure to build up within the combustion chamber, which build up can cause instabilities in the flame. A restriction in the inlet to the combustion chamber from the mixing chamber forces the incoming streams to converge while introducing minor pressure drop. In one or more aspects, heat from combustion products exhausted from the combustion chamber may be used to provide heat to at least one of fuel passing through the fuel inlet channel, oxidant passing through the oxidant inlet channel, the mixing chamber, or the combustion chamber. In one or more aspects, an ignition strip may be positioned in the combustion chamber to sustain a flame without preheating.

Variationen und ihre Kompensation in CMOS Digitalschaltungen

OpenAIRE

Baumann, Thomas

2010-01-01

Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

Design and Calibration of an RF Actuator for Low-Level RF Systems

Science.gov (United States)

Geng, Zheqiao; Hong, Bo

2016-02-01

X-ray free electron laser (FEL) machines like the Linac Coherent Light Source (LCLS) at SLAC require high-quality electron beams to generate X-ray lasers for various experiments. Digital low-level RF (LLRF) systems are widely used to control the high-power RF klystrons to provide a highly stable RF field in accelerator structures for beam acceleration. Feedback and feedforward controllers are implemented in LLRF systems to stabilize or adjust the phase and amplitude of the RF field. To achieve the RF stability and the accuracy of the phase and amplitude adjustment, low-noise and highly linear RF actuators are required. Aiming for the upgrade of the S-band Linac at SLAC, an RF actuator is designed with an I/Qmodulator driven by two digital-to-analog converters (DAC) for the digital LLRF systems. A direct upconversion scheme is selected for RF actuation, and an on-line calibration algorithm is developed to compensate the RF reference leakage and the imbalance errors in the I/Q modulator, which may cause significant phase and amplitude actuation errors. This paper presents the requirements on the RF actuator, the design of the hardware, the calibration algorithm, and the implementation in firmware and software and the test results at LCLS.

A −3 dBm RF transmitter front-end for 802.11g application

International Nuclear Information System (INIS)

Zhao Jinxin; Yan Jun; Shi Yin

2013-01-01

A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13 μm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is −3 dBm while the corresponding EVM is −27 dB which is necessary for the 802.11g standard of EVM at −25 dB. With the adopted gain control strategy the output power changes from −14.3 to −3.7 dBm with every step 0.8 dB (20%) which covers the gain variation due to working temperature and process. A power detector indicates the output power and delivers a voltage to the baseband to control the output power. (semiconductor integrated circuits)

CMOS Integrated Carbon Nanotube Sensor

International Nuclear Information System (INIS)

Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

2009-01-01

Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

CMOS analog circuit design

CERN Document Server

Allen, Phillip E

1987-01-01

This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Rimoldi, Marco; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

FDC Mentor-Mentee Mixer Breaks the Ice Between Investigators and Trainees | Poster

Science.gov (United States)

The Frederick Diversity Committee’s mentor-mentee mixer gave research trainees, senior investigators, scientists, and administrative staff a chance to meet and mingle over refreshments and games following the Spring Research Festival.

Process design of a new injection method of liquid CO2 at the intermediate depths in the ocean using a static mixer

International Nuclear Information System (INIS)

Tajima, Hideo; Yamasaki, Akihiro; Kiyono, Fumio

2005-01-01

Process design for a new injection method of liquid CO 2 using a static mixer was conducted based on laboratory experimental results on the formation process of liquid CO 2 drops covered with hydrate film by a Kenics-type static mixer, and numerical simulation of the liquid CO 2 drops at 500 and 1500 m. The Sauter Mean Diameter (SMD) of the liquid CO 2 drops covered with hydrate film was dramatically decreased with the use of the static mixer; empirical equations were obtained for the SMD, and also the maximum and minimum diameters of the liquid CO 2 drops for a given flow velocity (Weber number, We). The ascending and dissolving behavior of a liquid CO 2 drop with hydrate released in the ocean at an intermediate depth was numerically simulated, and the maximum drop diameter to avoid evaporation of the drop before complete dissolution was estimated. Based on these results, scaling up of the static mixer was conducted by assuming a disposal process of CO 2 emitted from a 100-MW thermal power plant, and the mixer diameter was determined as a function of the given SMD. Moreover, the power consumption of the static mixer was evaluated and found to be almost negligible. (author)

Long term ionization response of several BiCMOS VLSIC technologies

International Nuclear Information System (INIS)

Pease, R.L.; Combs, W.; Clark, S.

1992-01-01

BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

Terahertz hot electron bolometer waveguide mixers for GREAT

OpenAIRE

Pütz, P.; Honingh, C. E.; Jacobs, K.; Justen, M.; Schultz, M.; Stutzki, J.

2012-01-01

Supplementing the publications based on the first-light observations with the German Receiver for Astronomy at Terahertz frequencies (GREAT) on SOFIA, we present background information on the underlying heterodyne detector technology. We describe the superconducting hot electron bolometer (HEB) detectors that are used as frequency mixers in the L1 (1400 GHz), L2 (1900 GHz), and M (2500 GHz) channels of GREAT. Measured performance of the detectors is presented and background information on the...

First principle leakage current reduction technique for CMOS devices

CSIR Research Space (South Africa)

Tsague, HD

2015-12-01

Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

A Self-Powered Hybrid Energy Scavenging System Utilizing RF and Vibration Based Electromagnetic Harvesters

International Nuclear Information System (INIS)

Uluşan, H; Gharehbaghi, K; Külah, H; Zorlu, Ö; Muhtaroğlu, A

2015-01-01

This study presents a novel hybrid system that combines the power generated simultaneously by a vibration-based Electromagnetic (EM) harvester and a UHF band RF harvester. The novel hybrid scavenger interface uses a power management circuit in 180 nm CMOS technology to step-up and to regulate the combined output. At the first stage of the system, the RF harvester generates positive DC output with a 7-stage threshold compensated rectifier, while the EM harvester generates negative DC output with a self-powered AC/DC negative doubler circuit. At the second stage, the generated voltages are serially added, stepped-up with an on-chip charge pump circuit, and regulated to a typical battery voltage of 3 V. Test results indicate that the hybrid operation enables generation of 9 μW at 3 V output for a wide range of input stimulations, which could not be attained with either harvesting mode by itself. Moreover the hybrid system behaves as a typical battery, and keeps the output voltage stable at 3 V up to 18 μW of output power. The presented system is the first battery-like harvester to our knowledge that generates energy from two independent sources and regulates the output to a stable DC voltage. (paper)

RF transport

International Nuclear Information System (INIS)

Choroba, Stefan

2013-01-01

This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

Structural analysis: Flexible receiver yoke brace for the 241SY101 mixer pump

International Nuclear Information System (INIS)

Jones, K.M.

1994-01-01

This report documents the structural analysis of the flexible-receiver yoke brace that will be used to maintain the mixer pump lifting yoke in a vertical position during the removal of the mixer pump from waste tank 241SY101. During the removal process, the crane is connected to a lifting yoke which is attached to the lifting on the mounting flange of the mixer pump. The pump then can be lifted from the tank. At one point in the removal procedure, the crane will be disconnected from the lifting yoke. At this time, it is possible for the lifting yoke to rotate around the pinned connection between it and the pump if it is subjected to a horizontal load. To prevent the rotation of the lifting yoke, the yoke brace was designed to maintain the yoke in a vertical position while it is disconnected from the crane. This analysis addressed the adequacy of the yoke brace to provide support for the lifting yoke during high winds and a seismic event. The results of this analysis show that, when subjected to a combined design wind and seismic load, the yoke brace design is acceptable to maintain the lifting yoke in a vertical position when the yoke is disconnected from the crane

Design of Ka-band antipodal finline mixer and detector

International Nuclear Information System (INIS)

Yao Changfei; Xu Jinping; Chen Mo

2009-01-01

This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S-matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis. The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz, and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.

Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

Science.gov (United States)

Xiangming, Xu; Jingfeng, Huang; Han, Yu; Wensheng, Qian; Zhengliang, Zhou; Bo, Han; Yong, Wang; Pengfei, Wang; Zhang, David Wei

2015-06-01

A laterally diffused metal-oxide-semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS transistors for GSM (global system for mobile communication) application have been fabricated by using 0.35 μm CMOS technologies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency (PAE) is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 : 1 voltage standing wave ratio (VSWR) load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point (P10dB). The device ruggedness has been remarkably improved by using the proposed device structure. Project supported by the Chinese National Key Project (No. 2012ZX02502).

CMOS front ends for millimeter wave wireless communication systems

CERN Document Server

Deferm, Noël

2015-01-01

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

Merits of CMOS/SIMOX technology for low-voltage SRAM macros

CERN Document Server

Kumagai, K; Yamada, T; Nakamura, H; Onishi, H; Matsubara, Y; Imai, K; Kurosawa, S

1999-01-01

A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. As the $9 yield of the 128-kbit SRAM macros was almost the same as the standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD-CMOS/SIMOX technology has also been demonstrated. (7 refs).

Hybrid Josephson-CMOS Memory in Advanced Technologies and Larger Sizes

International Nuclear Information System (INIS)

Liu, Q; Van Duzer, T; Fujiwara, K; Yoshikawa, N

2006-01-01

Recent progress on demonstrating components of the 64 kb Josephson-CMOS hybrid memory has encouraged exploration of the advancement possible with use of advanced technologies for both the Josephson and CMOS parts of the memory, as well as considerations of the effect of memory size on access time and power dissipation. The simulations to be reported depend on the use of an approximate model for 90 nm CMOS at 4 K. This model is an extension of the one we developed for 0.25 μm CMOS and have already verified. For the Josephson parts, we have chosen 20 kA/cm 2 technology, which was recently demonstrated. The calculations show that power dissipation and access time increase rather slowly with increasing size of the memory

CMOS Imaging Sensor Technology for Aerial Mapping Cameras

Science.gov (United States)

Neumann, Klaus; Welzenbach, Martin; Timm, Martin

2016-06-01

In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

Design of 2.4Ghz CMOS Floating Active Inductor LNA using 130nm Technology

Science.gov (United States)

Muhamad, M.; Soin, N.; Ramiah, H.

2018-03-01

This paper presents about design and optimization of CMOS active inductor integrated circuit. This active inductor implements using Silterra 0.13μm technology and simulated using Cadence Virtuoso and Spectre RF. The center frequency for this active inductor is at 2.4 GHz which follow IEEE 802.11 b/g/n standard. To reduce the chip size of silicon, active inductor is used instead of passive inductor at low noise amplifier LNA circuit. This inductor test and analyse by low noise amplifier circuit. Comparison between active with passive inductor based on LNA circuit has been performed. Result shown that the active inductor has significantly reduce the chip size with 73 % area without sacrificing the noise figure and gain of LNA which is the most important criteria in LNA. The best low noise amplifier provides a power gain (S21) of 20.7 dB with noise figure (NF) of 2.1dB.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

Science.gov (United States)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

NARCIS (Netherlands)

Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

2018-01-01

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

DEFF Research Database (Denmark)

Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

2008-01-01

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

International Nuclear Information System (INIS)

Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao

2017-01-01

We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

Femtosecond precision measurement of laser–rf phase jitter in a photocathode rf gun

Energy Technology Data Exchange (ETDEWEB)

Shi, Libing; Zhao, Lingrong; Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhu, Pengfei; Xiang, Dao, E-mail: dxiang@sjtu.edu.cn

2017-03-21

We report on the measurement of the laser–rf phase jitter in a photocathode rf gun with femtosecond precision. In this experiment four laser pulses with equal separation are used to produce electron bunch trains; then the laser–rf phase jitter is obtained by measuring the variations of the electron bunch spacing with an rf deflector. Furthermore, we show that when the gun and the deflector are powered by the same rf source, it is possible to obtain the laser–rf phase jitter in the gun through measurement of the beam–rf phase jitter in the deflector. Based on these measurements, we propose an effective time-stamping method that may be applied in MeV ultrafast electron diffraction facilities to enhance the temporal resolution.

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

Modeling and Optimization of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applicaitons

Science.gov (United States)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.; Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.

1996-01-01

The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.

Rf power sources

International Nuclear Information System (INIS)

Allen, M.A.

1988-01-01

In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

Detection of MM.-radiation with high current density submicron niobium-niobium Josephson junctions

International Nuclear Information System (INIS)

Daalmans, G.M.; Graauw, T. de; Lidholm, S.; Vliet, F. v.

1980-01-01

The rf-induced step heights in submicron niobium-niobium Josephson junctions are in good agreement with Russer theory at 230 and 240 GHz. At 115 and 460 GHz the agreement is less but still reasonably good. The junction noise without rf-bias is within a factor of two equal to the theoretical limit. With rf-bias applied it can be equal to the theoretical limit within a factor of two. The maximum conversion efficiency measured at 230 GHz was 0.18 and the lowest single side band mixer noise temperature at the same frequency was 380 K. Saturation effects are limiting the performance of the mixer. Improvements in eta and Tsub(M) of a factor of two can be expected by eliminating these saturation effects. The mixer which has been studied most extensively starting at 12-3-80 is still alive at 5-6-80 after many cooling cycles, storage at room temperature and soldering in and out of the dewar. The reliability of this type of junction cannot be questionable anymore. (orig.)

CMOS Image Sensors: Electronic Camera On A Chip

Science.gov (United States)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

CMOS image sensor-based immunodetection by refractive-index change.

Science.gov (United States)

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

Open source laboratory sample rotator mixer and shaker

Directory of Open Access Journals (Sweden)

Karankumar C. Dhankani

2017-04-01

Full Text Available An open-source 3-D printable laboratory sample rotator mixer is developed here in two variants that allow users to opt for the level of functionality, cost saving and associated complexity needed in their laboratories. First, a laboratory sample rotator is designed and demonstrated that can be used for tumbling as well as gentle mixing of samples in a variety of tube sizes by mixing them horizontally, vertically, or any position in between. Changing the mixing angle is fast and convenient and requires no tools. This device is battery powered and can be easily transported to operate in various locations in a lab including desktops, benches, clean hoods, chemical hoods, cold rooms, glove boxes, incubators or biological hoods. Second, an on-board Arduino-based microcontroller is incorporated that adds the functionality of a laboratory sample shaker. These devices can be customized both mechanically and functionally as the user can simply select the operation mode on the switch or alter the code to perform custom experiments. The open source laboratory sample rotator mixer can be built by non-specialists for under US$30 and adding shaking functionality can be done for under $20 more. Thus, these open source devices are technically superior to the proprietary commercial equipment available on the market while saving over 90% of the costs.

A planar microfluidic mixer based on logarithmic spirals

International Nuclear Information System (INIS)

Scherr, Thomas; Nandakumar, Krishnaswamy; Quitadamo, Christian; Tesvich, Preston; Park, Daniel Sang-Won; Hayes, Daniel; Monroe, W Todd; Tiersch, Terrence; Choi, Jin-Woo

2012-01-01

A passive, planar micromixer design based on logarithmic spirals is presented. The device was fabricated using polydimethylsiloxane soft photolithography techniques, and mixing performance was characterized via numerical simulation and fluorescent microscopy. Mixing efficiency initially declined as the Reynolds number increased, and this trend continued until a Reynolds number of 15 where a minimum was reached at 53%. Mixing efficiency then began to increase reaching a maximum mixing efficiency of 86% at Re = 67. Three-dimensional (3D) simulations of fluid mixing in this design were compared to other planar geometries such as the Archimedes spiral and Meandering-S mixers. The implementation of logarithmic curvature offers several unique advantages that enhance mixing, namely a variable cross-sectional area and a logarithmically varying radius of curvature that creates 3D Dean vortices. These flow phenomena were observed in simulations with multilayered fluid folding and validated with confocal microscopy. This design provides improved mixing performance over a broader range of Reynolds numbers than other reported planar mixers, all while avoiding external force fields, more complicated fabrication processes and the introduction of flow obstructions or cavities that may unintentionally affect sensitive or particulate-containing samples. Due to the planar design requiring only single-step lithographic features, this compact geometry could be easily implemented into existing micro-total analysis systems requiring effective rapid mixing. (paper)

CMOS circuit design, layout and simulation

CERN Document Server

Baker, R Jacob

2010-01-01

The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

Microscopic investigation of RF surfaces of 3 GHz niobium accelerator cavities following RF processing

International Nuclear Information System (INIS)

Graber, J.; Barnes, P.; Flynn, T.; Kirchgessner, J.; Knobloch, J.; Moffat, D.; Muller, H.; Padamsee, H.; Sears, J.

1993-01-01

RF processing of Superconducting accelerating cavities is achieved through a change in the electron field emission (FE) characteristics of the RF surface. The authors have examined the RF surfaces of several single-cell 3 GHz cavities, following RF processing, in a Scanning Electron Microscope (SEM). The RF processing sessions included both High Peak Power (P ≤ 50 kW) pulsed processing, and low power (≤ 20 W) continuous wave processing. The experimental apparatus also included a thermometer array on the cavity outer wall, allowing temperature maps to characterize the emission before and after RF processing gains. Multiple sites have been located in cavities which showed improvements in cavity behavior due to RF processing. Several SEM-located sites can be correlated with changes in thermometer signals, indicating a direct relationship between the surface site and emission reduction due to RF processing. Information gained from the SEM investigations and thermometry are used to enhance the theoretical model of RF processing

Phase-locking of a terahertz solid-state source using a superconducting hot-electron bolometer mixer

International Nuclear Information System (INIS)

Miao, W; Zhang, W; Zhou, K M; Li, S L; Zhang, K; Duan, W Y; Yao, Q J; Shi, S C

2013-01-01

We report on a scheme whereby the local-oscillator (LO) of a THz heterodyne receiver can be phase-locked by the mixer of the heterodyne receiver. This scheme is demonstrated for the phase-locking of an 847.6 GHz Gunn oscillator and multiplier chain combined source with a superconducting hot-electron bolometer (HEB) mixer. We show that with this technique the phase-locked beat signal can reach a signal-to-noise ratio higher than 70 dB in a resolution bandwidth (RBW) of 1 Hz. This phase-locking scheme should find good use in THz heterodyne spectrometers. (paper)

Photon detection with CMOS sensors for fast imaging

International Nuclear Information System (INIS)

Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

2009-01-01

Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

Contact CMOS imaging of gaseous oxygen sensor array.

Science.gov (United States)

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

CMOS sigma-delta converters practical design guide

CERN Document Server

De la Rosa, Jose M

2013-01-01

A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

High-Voltage-Input Level Translator Using Standard CMOS

Science.gov (United States)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

Advancement of CMOS Doping Technology in an External Development Framework

Science.gov (United States)

Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

2011-01-01

The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

Modeling emulsification processes in rotary-disk mixers

Science.gov (United States)

Laponov, S. V.; Shulaev, N. S.; Ivanov, S. P.; Bondar', K. E.; Suleimanov, D. F.

2017-10-01

This article presents the experimental studies results of emulsification processes in liquid-liquid systems in rotary-disk mixers, allowing regulating the distribution of dispersed particles by changing the process conditions and the ratio of the dispersed phase. It is shown that with the increase of mixer’s revolutions per minute (RPM), both the size of dispersed particles and the deviation of dispersed particles sizes from the average decrease. The increase of the dispersed particles part results in the increase of particles average sizes at the current energy consumption. Discovered relationships can be used in the design of industrial equipment and laboratory research.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Science.gov (United States)

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Transient-induced latchup in CMOS integrated circuits

CERN Document Server

Ker, Ming-Dou

2009-01-01

"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

Science.gov (United States)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

International Nuclear Information System (INIS)

Zheng Renliang; Ren Junyan; Li Wei; Li Ning

2009-01-01

A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 μm RF CMOS process with an area of 1.74 mm 2 and only consumes 32 mA current (at 1.8 V) including the test associated parts. (semiconductor integrated circuits)

A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18 {mu}m CMOS for OFDM-UWB

Energy Technology Data Exchange (ETDEWEB)

Zheng Renliang; Ren Junyan; Li Wei; Li Ning, E-mail: jyren@fudan.edu.c [Micro/Nano Science and Innovation Platform, State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2009-12-15

A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 {mu}m RF CMOS process with an area of 1.74 mm{sup 2} and only consumes 32 mA current (at 1.8 V) including the test associated parts. (semiconductor integrated circuits)

Development of a CMOS process using high energy ion implantation

International Nuclear Information System (INIS)

Stolmeijer, A.

1986-01-01

The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

National Research Council Canada - National Science Library

An, S

2001-01-01

.... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

A CMOS transconductance-C filter technique for very high frequencies

NARCIS (Netherlands)

Nauta, Bram

1992-01-01

CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators, are presented. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters

A Fully Integrated Dual-Channel On-Coil CMOS Receiver for Array Coils in 1.5-10.5 T MRI.

Science.gov (United States)

Sporrer, Benjamin; Wu, Lianbo; Bettini, Luca; Vogt, Christian; Reber, Jonas; Marjanovic, Josip; Burger, Thomas; Brunner, David O; Pruessmann, Klaas P; Troster, Gerhard; Huang, Qiuting

2017-12-01

Magnetic resonance imaging (MRI) is among the most important medical imaging modalities. Coil arrays and receivers with high channel counts (16 and more) have to be deployed to obtain the image quality and acquisition speed required by modern clinical protocols. In this paper, we report the theoretical analysis, the system-level design, and the circuit implementation of the first receiver IC (RXIC) for clinical MRI fully integrated in a modern CMOS technology. The dual-channel RXIC sits directly on the sensor coil, thus eliminating any RF cable otherwise required to transport the information out of the magnetic field. The first stage LNA was implemented using a noise-canceling architecture providing a highly reflective input used to decouple the individual channels of the array. Digitization is performed directly on-chip at base-band by means of a delta-sigma modulator, allowing the subsequent optical transmission of data. The presented receiver, implemented in a CMOS technology, is compatible with MRI scanners up to . It reaches sub- noise figure for MRI units and features a dynamic range up to at a power consumption below per channel, with an area occupation of . Mounted on a small-sized printed circuit board (PCB), the receiver IC has been employed in a commercial MRI scanner to acquire in-vivo images matching the quality of traditional systems, demonstrating the first step toward multichannel wearable MRI array coils.

Numerical study of fluid motion in bioreactor with two mixers

Energy Technology Data Exchange (ETDEWEB)

Zheleva, I., E-mail: izheleva@uni-ruse.bg [Department of Heat Technology, Hydraulics and Ecology, Angel Kanchev University of Rousse, 8 Studentska str., 7017 Rousse (Bulgaria); Lecheva, A., E-mail: alecheva@uni-ruse.bg [Department of Mathematics, Angel Kanchev University of Rousse, 8 Studentska str., 7017 Rousse (Bulgaria)

2015-10-28

Numerical study of hydrodynamic laminar behavior of a viscous fluid in bioreactor with multiple mixers is provided in the present paper. The reactor is equipped with two disk impellers. The fluid motion is studied in stream function-vorticity formulation. The calculations are made by a computer program, written in MATLAB. The fluid structure is described and numerical results are graphically presented and commented.

Linearisation of RF Power Amplifiers

DEFF Research Database (Denmark)

Nielsen, Per Asbeck

2001-01-01

and an amplitude detection circuit is given. The purpose is to explore the limitation on commercial available parts and to recognize the challenges in polar loop linearisation. The design of a fabricated CMOS PA is presented. The design is carried out in a standard digital Epi-CMOS which allows integration...... different detectors were designed. Two non-linear detectors and one linear. The two former AM-detectors have been measured. Based on these measurements the achievable spectral leakage and error vector magnitude were predicted....

Unified Frequency-Domain Analysis of Switched-Series-RC Passive Mixers and Samplers

NARCIS (Netherlands)

Soer, M.C.M.; Klumperink, Eric A.M.; de Boer, Pieter-Tjerk; van Vliet, Frank Edward; Nauta, Bram

2010-01-01

Abstract—A wide variety of voltage mixers and samplers are implemented with similar circuits employing switches, resistors, and capacitors. Restrictions on duty cycle, bandwidth, or output frequency are commonly used to obtain an analytical expression for the response of these circuits. This paper

A simple three-dimensional-focusing, continuous-flow mixer for the study of fast protein dynamics.

Science.gov (United States)

Burke, Kelly S; Parul, Dzmitry; Reddish, Michael J; Dyer, R Brian

2013-08-07

We present a simple, yet flexible microfluidic mixer with a demonstrated mixing time as short as 80 μs that is widely accessible because it is made of commercially available parts. To simplify the study of fast protein dynamics, we have developed an inexpensive continuous-flow microfluidic mixer, requiring no specialized equipment or techniques. The mixer uses three-dimensional, hydrodynamic focusing of a protein sample stream by a surrounding sheath solution to achieve rapid diffusional mixing between the sample and sheath. Mixing initiates the reaction of interest. Reactions can be spatially observed by fluorescence or absorbance spectroscopy. We characterized the pixel-to-time calibration and diffusional mixing experimentally. We achieved a mixing time as short as 80 μs. We studied the kinetics of horse apomyoglobin (apoMb) unfolding from the intermediate (I) state to its completely unfolded (U) state, induced by a pH jump from the initial pH of 4.5 in the sample stream to a final pH of 2.0 in the sheath solution. The reaction time was probed using the fluorescence of 1-anilinonaphthalene-8-sulfonate (1,8-ANS) bound to the folded protein. We observed unfolding of apoMb within 760 μs, without populating additional intermediate states under these conditions. We also studied the reaction kinetics of the conversion of pyruvate to lactate catalyzed by lactate dehydrogenase using the intrinsic tryptophan emission of the enzyme. We observe sub-millisecond kinetics that we attribute to Michaelis complex formation and loop domain closure. These results demonstrate the utility of the three-dimensional focusing mixer for biophysical studies of protein dynamics.

Nano-electromechanical switch-CMOS hybrid technology and its applications.

Science.gov (United States)

Lee, B H; Hwang, H J; Cho, C H; Lim, S K; Lee, S Y; Hwang, H

2011-01-01

Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.

RF study and 3-D simulations of a side-coupling thermionic RF-gun

International Nuclear Information System (INIS)

Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

2014-01-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012 © . RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance

RF study and 3-D simulations of a side-coupling thermionic RF-gun

Science.gov (United States)

Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

2014-02-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012©. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

Science.gov (United States)

Bauhahn, P.; Contolatis, A.; Sokolov, V.; Chao, C.

1986-01-01

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

CMOS VLSI Active-Pixel Sensor for Tracking

Science.gov (United States)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

Development of radiation hard CMOS active pixel sensors for HL-LHC

International Nuclear Information System (INIS)

Pernegger, Heinz

2016-01-01

New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

A novel microfluidic mixer based on dual-hydrodynamic focusing for interrogating the kinetics of DNA-protein interaction.

Science.gov (United States)

Li, Ying; Xu, Fei; Liu, Chao; Xu, Youzhi; Feng, Xiaojun; Liu, Bi-Feng

2013-08-21

Kinetic measurement of biomacromolecular interaction plays a significant role in revealing the underlying mechanisms of cellular activities. Due to the small diffusion coefficient of biomacromolecules, it is difficult to resolve the rapid kinetic process with traditional analytical methods such as stopped-flow or laminar mixers. Here, we demonstrated a unique continuous-flow laminar mixer based on microfluidic dual-hydrodynamic focusing to characterize the kinetics of DNA-protein interactions. The time window of this mixer for kinetics observation could cover from sub-milliseconds to seconds, which made it possible to capture the folding process with a wide dynamic range. Moreover, the sample consumption was remarkably reduced to <0.55 μL min⁻¹, over 1000-fold saving in comparison to those reported previously. We further interrogated the interaction kinetics of G-quadruplex and the single-stranded DNA binding protein, indicating that this novel micromixer would be a useful approach for analyzing the interaction kinetics of biomacromolecules.

Pre-Clinical Tests of an Integrated CMOS Biomolecular Sensor for Cardiac Diseases Diagnosis.

Science.gov (United States)

Lee, Jen-Kuang; Wang, I-Shun; Huang, Chi-Hsien; Chen, Yih-Fan; Huang, Nien-Tsu; Lin, Chih-Ting

2017-11-26

Coronary artery disease and its related complications pose great threats to human health. In this work, we aim to clinically evaluate a CMOS field-effect biomolecular sensor for cardiac biomarkers, cardiac-specific troponin-I (cTnI), N -terminal prohormone brain natriuretic peptide (NT-proBNP), and interleukin-6 (IL-6). The CMOS biosensor is implemented via a standard commercialized 0.35 μm CMOS process. To validate the sensing characteristics, in buffer conditions, the developed CMOS biosensor has identified the detection limits of IL-6, cTnI, and NT-proBNP as being 45 pM, 32 pM, and 32 pM, respectively. In clinical serum conditions, furthermore, the developed CMOS biosensor performs a good correlation with an enzyme-linked immuno-sorbent assay (ELISA) obtained from a hospital central laboratory. Based on this work, the CMOS field-effect biosensor poses good potential for accomplishing the needs of a point-of-care testing (POCT) system for heart disease diagnosis.

RF characterization and testing of ridge waveguide transitions for RF power couplers

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rajesh; Jose, Mentes; Singh, G.N. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Girish [Department of Electrical Engineering, IIT Bombay, Mumbai 400076,India (India); Bhagwat, P.V. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2016-12-01

RF characterization of rectangular to ridge waveguide transitions for RF power couplers has been carried out by connecting them back to back. Rectangular waveguide to N type adapters are first calibrated by TRL method and then used for RF measurements. Detailed information is obtained about their RF behavior by measurements and full wave simulations. It is shown that the two transitions can be characterized and tuned for required return loss at design frequency of 352.2 MHz. This opens the possibility of testing and conditioning two transitions together on a test bench. Finally, a RF coupler based on these transitions is coupled to an accelerator cavity. The power coupler is successfully tested up to 200 kW, 352.2 MHz with 0.2% duty cycle.

Scale-up of mixer-settler for uranium extraction; Determinacao das relacoes de `scale-up` em misturador-decantador tipo caixa utilizado na extracao de uranio

Energy Technology Data Exchange (ETDEWEB)

Santana, A.O. de

1990-05-01

The aim of this work was to obtain scale-up relations for a box type mixer-settler used in uranium extraction process for chloridric leaches. Three box type units with different sizes and with the same geometry were used for scale-up of the mixer. The correlation between extraction rate and specific power input, D/T ratio (stirrer diameter/mixer length) and residence time were experimentally obtained. The results showed that the extraction increases with power input for a constant value of D/T equal to 1/3, remaining however independent from mixer sizes for a specific value of power input. This behavior was observed for power input values ranging from 100 to 750 w/m{sup 9}. (author). 23 refs, 22 figs, 23 tabs.

Fabrication of an Aluminum Based Hot Electron Mixer for Terahertz Applications

Science.gov (United States)

Echternach, P. M.; LeDuc, H. G.; Skalare, A.; McGrath, W. R.

2000-01-01

Aluminum based diffusion cooled hot electron bolometers (HEB) mixers, predicted to have better noise, bandwidth and to require less LO power than Nb based diffusion cooled HEBs, have been fabricated. Preliminary DC tests were performed. The bolometer elements consisted of short (0.1 to 0.3 micron), narrow (0.08 to 0. 15 micron) and thin (11 nm) aluminum wires connected to large contact pads consisting of a novel trilayer Al/Ti/Au. The patterns were defined by electron beam lithography and the metal deposition involved a double angle process, the Aluminum wires being deposited straight on and the pads being deposited at a 45 degree angle without breaking vacuum. The Al/Ti/Au trilayer was developed to provide a way of making contact between the aluminum wire and the gold antenna. The Titanium layer acts as a diffusion barrier to avoid damage of the Aluminum contact and bolometer wire and to lower the transition temperature of the pads to below that of the bolometer wire. The Au layer avoids the formation of an oxide on the Ti layer and provides good electrical contact to the IF/antenna structure. The resistance of the bolometers as a function of temperature was measured. It is clear that below the transition temperature of the wire (1.8K) but above the transition temperature of the contact pads (0.6K), the proximity effect drives most of the bolometer wire normal, causing a very broad transition. This effect should not affect the performance of the bolometers since they will be operated at a temperature below the TC of the pads. This is evident from the IV characteristics measured at 0.3K. RF characterization tests will begin shortly.

Challenges & Roadmap for Beyond CMOS Computing Simulation.

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

Fabrication of High-T(sub c) Hot-Electron Bolometric Mixers for Terahertz Applications

Science.gov (United States)

Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.; Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

1996-01-01

Superocnducting hot-electron bolometers (HEB) represent a promising candidate for heterodyne mixing at frequencies exceeding 1 THz. Nb HEB mixers offer performance competitive with tunnel junctions without the frequency limit imposed by the superconducting energy gap.

Experiments on Josephson mixers for heterodyne reception at 0.3 mm wavelength

International Nuclear Information System (INIS)

Blaney, T.G.; Knight, D.J.E.

1974-01-01

A point contact Josephson junction was investigated as a heterodyne mixer at 337 μm. The conversion efficiency reached about -32 dB using a laser local oscillator and about -42 dB using 9th or 12th harmonic mixing with a klystron

Analysis of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applications

Science.gov (United States)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

1996-01-01

The prospects of a YBa2Cu3O7(delta)(YBCO) hot-electron bolometer (HEB) mixer for a THz heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate.

VLSI scaling methods and low power CMOS buffer circuit

International Nuclear Information System (INIS)

Sharma Vijay Kumar; Pattanaik Manisha

2013-01-01

Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

Characterization of active CMOS pixel sensors on high resistive substrate

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

2016-07-01

Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

RF study and 3-D simulations of a side-coupling thermionic RF-gun

Energy Technology Data Exchange (ETDEWEB)

Rimjaem, S., E-mail: sakhorn.rimjaem@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand); Kusoljariyakul, K.; Thongbai, C. [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand)

2014-02-01

A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012{sup ©}. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

The RF Design of an HOM Polarized RF Gun for the ILC

International Nuclear Information System (INIS)

Wang, J.W.; Clendenin, J.E.; Colby, E.R.; Miller, R.A.; Lewellen, J.W.

2006-01-01

The ILC requires a polarized electron beam. While a highly polarized beam can be produced by a GaAs-type cathode in a DC gun of the type currently in use at SLAC, JLAB and elsewhere, the ILC injector system can be simplified and made more efficient if a GaAs-type cathode can be combined with a low emittance RF gun. Since this type of cathode is known to be extremely sensitive to vacuum contamination including back bombardment by electrons and ions, any successful polarized RF gun must have a significantly improved operating vacuum compared to existing RF guns. We present a new RF design for an L-Band normal conducting (NC) RF gun for the ILC polarized electron source. This design incorporates a higher order mode (HOM) structure, whose chief virtue in this application is an improved conductance for vacuum pumping on the cathode. Computer simulation models have been used to optimize the RF parameters with two principal goals: first to minimize the required RF power; second to reduce the peak surface field relative to the field at the cathode in order to suppress field emitted electron bombardment. The beam properties have been simulated initially using PARMELA. Vacuum and other practical issues for implementing this design are discussed

Accurate modeling of complete functional RF blocks: CHAMELEON RF

NARCIS (Netherlands)

Janssen, H.H.J.M.; Niehof, J.; Schilders, W.H.A.; Ciuprina, G.; Ioan, D.

2007-01-01

Next-generation nano-scale RF-IC designs have an unprecedented complexity and performance that will inevitably lead to costly re-spins and loss of market opportunities. In order to cope with this, the aim of the European Framework 6 CHAMELEON RF project is to develop methodologies and prototype

RF MEMS

Indian Academy of Sciences (India)

At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

Double Modulation Scheme for Switching Mixers Controlled by Sigma-Delta Modulators

DEFF Research Database (Denmark)

Nielsen, Per Asbeck; Fallesen, Carsten

1998-01-01

. This modification can be carried out on a large variety of mixers including the above mentioned. Although the principle was meant to be used to down convert analog signals, the principle is general and can be used in digital circuits too. This paper verifies the new mixing scheme and compares it to the traditional...

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Risti{c}, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

CERN Document Server

Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

2003-01-01

Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Gaudiello, Andrea; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Self Oscillating Mixer with Dielectric Resonator for Low Noise Block Application

Directory of Open Access Journals (Sweden)

Endon Bharata

2011-08-01

Full Text Available In this paper, the development of a self oscillating mixer (SOM as part of a low noise block (LNB for a satellite television receiver is investigated numerically and experimentally. In contrast to other mixers, the developed SOM requires no separate local oscillator as it generates own local oscillator signal. The SOM is developed using a monolithic microwave integrated circuit (MMIC comprised of two bipolar transistors coupled as a Darlington pair and a dielectric resonator to establish a local oscillator signal. The SOM is designed to oscillate at 3.62GHz driven from 50W signal generator. The prototype of SOM is fabricated on a dielectric substrate of glass-reinforced hydrocarbon/ceramic lamination (RO4350B board which has a thickness of 0.762mm and relative permittivity of 3.66. The prototype is then characterized experimentally and exhibits a conversion gain of 8dB with the input and output voltage standing wave ratio (VSWR less than 2 across the 2520MHz to 2670MHz operating frequency band.

A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

International Nuclear Information System (INIS)

Mei Niansong; Sun Yu; Lu Bo; Pan Yaohua; Huang Yumei; Hong Zhiliang

2011-01-01

This paper presents a 10-GHz low spur and low jitter phase-locked loop (PLL). An improved low phase noise VCO and a dynamic phase frequency detector with a short delay reset time are employed to reduce the noise of the PLL. We also discuss the methodology to optimize the high frequency prescaler's noise and the charge pump's current mismatch. The chip was fabricated in a SMIC 0.13-μm RF CMOS process with a 1.2-V power supply. The measured integrated RMS jitter is 757 fs (1 kHz to 10 MHz); the phase noise is -89 and -118.1 dBc/Hz at 10 kHz and 1 MHz frequency offset, respectively; and the reference frequency spur is below -77 dBc. The chip size is 0.32 mm 2 and the power consumption is 30.6 mW. (semiconductor integrated circuits)

VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

Science.gov (United States)

Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

2014-10-01

This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

Recent developments with CMOS SSPM photodetectors

Energy Technology Data Exchange (ETDEWEB)

Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

2009-10-21

Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

Directory of Open Access Journals (Sweden)

Farès TOUNSI

2009-09-01

Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

Science.gov (United States)

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

241-SY-101 mixer pump lifetime expectancy. Final report

International Nuclear Information System (INIS)

Shaw, C.P.

1995-01-01

The purpose of WHC-SD-WM-TI-726, Rev. 0 241-SY-101 Mixer Pump Lifetime Expectancy is to determine a best estimate of the mean lifetime of non-repairable (located in the waste) essential features of the hydrogen mitigation mixer pump presently installed in 101-SY. The estimated mean lifetime is 9.1 years. This report does not demonstrate operation of the entire pump assembly within the Tank Farm ''safety envelope''. It was recognized by the Defense Nuclear Facilities Safety Board (DNFSB) this test pump was not specifically designed for long term service in tank 101-SY. In June 95 the DNFSB visited Hanford and ask the question, ''how long will this test pump last and how will the essential features fail?'' During the 2 day meeting with the DNFSB it was discussed and defined within the meeting just exactly what essential features of the pump must operate. These essential features would allow the pump to operate for the purpose of extending the window for replacement. Operating with only essential features would definitely be outside the operating safety envelope and would require a waiver. There are three essential features: 1. The pump itself (i.e. the impeller and motor) must operate 2. Nozzles and discharges leg must remain unplugged 3. The pump can be re-aimed, new waste targeted, even if manually

CMOS-based avalanche photodiodes for direct particle detection

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

The total dose effects on the 1/f noise of deep submicron CMOS transistors

International Nuclear Information System (INIS)

Hu Rongbin; Wang Yuxin; Lu Wu

2014-01-01

Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

PERFORMANCE OF DIFFERENT CMOS LOGIC STYLES FOR LOW POWER AND HIGH SPEED

OpenAIRE

Sreenivasa Rao.Ijjada; Ayyanna.G; G.Sekhar Reddy; Dr.V.Malleswara Rao

2011-01-01

Designing high-speed low-power circuits with CMOS technology has been a major research problem for many years. Several logic families have been proposed and used to improve circuit performance beyond that of conventional static CMOS family. Fast circuit families are becoming attractive in deep sub micron technologies since the performance benefits obtained from process scaling are decreasing as feature size decreases. This paper presents CMOS differential circuit families such as Dual rail do...

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2016-01-01

. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied

3D-printed conductive static mixers enable all-vanadium redox flow battery using slurry electrodes

Science.gov (United States)

Percin, Korcan; Rommerskirchen, Alexandra; Sengpiel, Robert; Gendel, Youri; Wessling, Matthias

2018-03-01

State-of-the-art all-vanadium redox flow batteries employ porous carbonaceous materials as electrodes. The battery cells possess non-scalable fixed electrodes inserted into a cell stack. In contrast, a conductive particle network dispersed in the electrolyte, known as slurry electrode, may be beneficial for a scalable redox flow battery. In this work, slurry electrodes are successfully introduced to an all-vanadium redox flow battery. Activated carbon and graphite powder particles are dispersed up to 20 wt% in the vanadium electrolyte and charge-discharge behavior is inspected via polarization studies. Graphite powder slurry is superior over activated carbon with a polarization behavior closer to the standard graphite felt electrodes. 3D-printed conductive static mixers introduced to the slurry channel improve the charge transfer via intensified slurry mixing and increased surface area. Consequently, a significant increase in the coulombic efficiency up to 95% and energy efficiency up to 65% is obtained. Our results show that slurry electrodes supported by conductive static mixers can be competitive to state-of-the-art electrodes yielding an additional degree of freedom in battery design. Research into carbon properties (particle size, internal surface area, pore size distribution) tailored to the electrolyte system and optimization of the mixer geometry may yield even better battery properties.

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

Characteristic performance of radio-frequency(RF) plasma heating using inverter RF power supplies

International Nuclear Information System (INIS)

Imai, Takahiro; Uesugi, Yoshihiko; Takamura, Shuichi; Sawada, Hiroyuki; Hattori, Norifumi

2000-01-01

High heat flux plasma are produced by high powe (∼14 kW) ICRF heating using inverter power supplies in the linear divertor simulator NAGDIS-II. The power flow of radiated rf power is investigated by a calorimetric method. Conventional power calculation using antenna voltage and current gives that about 70% of the rf power is radiated into the plasma. But increase of the heat load at the target and anode is about 10% of the rf power. Through this experiment, we find that about half of the rf power is lost at the antenna surface through the formation of rf induced sheath. And about 30% of the power is lost into the vacuum vessel through the charge exchange and elastic collision of ions with neutrals. (author)

Simulations of S-band RF gun with RF beam control

Science.gov (United States)

Barnyakov, A. M.; Levichev, A. E.; Maltseva, M. V.; Nikiforov, D. A.

2017-08-01

The RF gun with RF control is discussed. It is based on the RF triode and two kinds of the cavities. The first cavity is a coaxial cavity with cathode-grid assembly where beam bunches are formed, the second one is an accelerating cavity. The features of such a gun are the following: bunched and relativistic beams in the output of the injector, absence of the back bombarding electrons, low energy spread and short length of the bunches. The scheme of the injector is shown. The electromagnetic field simulation and longitudinal beam dynamics are presented. The possible using of the injector is discussed.

Rare Variants in Genes Encoding MuRF1 and MuRF2 Are Modifiers of Hypertrophic Cardiomyopathy

Directory of Open Access Journals (Sweden)

Ming Su

2014-05-01

Full Text Available Modifier genes contribute to the diverse clinical manifestations of hypertrophic cardiomyopathy (HCM, but are still largely unknown. Muscle ring finger (MuRF proteins are a class of muscle-specific ubiquitin E3-ligases that appear to modulate cardiac mass and function by regulating the ubiquitin-proteasome system. In this study we screened all the three members of the MuRF family, MuRF1, MuRF2 and MuRF3, in 594 unrelated HCM patients and 307 healthy controls by targeted resequencing. Identified rare variants were confirmed by capillary Sanger sequencing. The prevalence of rare variants in both MuRF1 and MuRF2 in HCM patients was higher than that in control subjects (MuRF1 13/594 (2.2% vs. 1/307 (0.3%, p = 0.04; MuRF2 22/594 (3.7% vs. 2/307 (0.7%; p = 0.007. Patients with rare variants in MuRF1 or MuRF2 were younger (p = 0.04 and had greater maximum left ventricular wall thickness (p = 0.006 than those without such variants. Mutations in genes encoding sarcomere proteins were present in 19 (55.9% of the 34 HCM patients with rare variants in MuRF1 and MuRF2. These data strongly supported that rare variants in MuRF1 and MuRF2 are associated with higher penetrance and more severe clinical manifestations of HCM. The findings suggest that dysregulation of the ubiquitin-proteasome system contributes to the pathogenesis of HCM.

rf impedance of the accelerating beam gap and its significance to the TRIUMF rf system

International Nuclear Information System (INIS)

Poirier, R.

1979-03-01

The rf system at TRIUMF is now operating with the highest Q, the lowest rf leakage into the beam gap, the best voltage stability, and the lowest resonator strongback temperatures ever measured since it was first put into operation. This paper describes the calculation of the rf impedance of the beam gap and its correlation to the rf problems encountered, which eventually led to modifications to the flux guides and resonator tips to accomplish the improved operation of the rf system

Noise and Spurious Tones Management Techniques for Multi-GHz RF-CMOS Frequency Synthesizers Operating in Large Mixed Analog-Digital SOCs

Directory of Open Access Journals (Sweden)

Maxim Adrian

2006-01-01

Full Text Available This paper presents circuit techniques and power supply partitioning, filtering, and regulation methods aimed at reducing the phase noise and spurious tones in frequency synthesizers operating in large mixed analog-digital system-on-chip (SOC. The different noise and spur coupling mechanisms are presented together with solutions to minimize their impact on the overall PLL phase noise performance. Challenges specific to deep-submicron CMOS integration of multi-GHz PLLs are revealed, while new architectures that address these issues are presented. Layout techniques that help reducing the parasitic noise and spur coupling between digital and analog blocks are described. Combining system-level and circuit-level low noise design methods, low phase noise frequency synthesizers were achieved which are compatible with the demanding nowadays wireless communication standards.