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Sample records for resonance plasma etching

  1. Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-04

    Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

  2. Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching.

    Science.gov (United States)

    Mendoza-Galván, Arturo; Järrendahl, Kenneth; Arwin, Hans; Huang, Yi-Fan; Chen, Li-Chyong; Chen, Kuei-Hsien

    2009-09-10

    Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns 100-140 nm wide and spaced by about 200 nm. Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and 955 cm(-1), which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and CH(n) species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips.

  3. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  4. High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, M.

    2012-01-01

    A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used...... to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field...... in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O-2 mixtures was almost similar with that by positive ions reaching 700 nm/min. (C) 2012 American Institute of Physics...

  5. Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching

    CERN Document Server

    Lee, J H; Lee, C W; Yoon, H S; Park, B S; Park, C S

    1999-01-01

    GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance (ECR) plasma etching have been investigated. We used a BCl sub 3 /SF sub 6 gas mixture to implement the gate recess process. We obtained a uniformity of the threshold voltage to within 50 mV in 3-inch wafers. The GaAs PHEMTs with a 0.2-mu m gate length recessed by the ECR plasma exhibited a minimum noise figure (NF sub m sub i sub n) as low as 0.26 dB with an associated gain (G sub a) of 13 dB at 12 GHz. At 18 GHz, the NF sub m sub i sub n was 0.47 dB with a Ga of 11.66 dB. These results suggest that the ECR plasma etching process reported here is suitable as a manufacturing process for gate recess of a GaAs PHEMT.

  6. Plasma Etching Improves Solar Cells

    Science.gov (United States)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  7. SF6 plasma etching of silicon nanocrystals.

    Science.gov (United States)

    Liptak, R W; Devetter, B; Thomas, J H; Kortshagen, U; Campbell, S A

    2009-01-21

    An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.

  8. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  9. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    Science.gov (United States)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  11. Polymerization monitoring in plasma etching systems

    Science.gov (United States)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization

  12. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  13. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  14. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  15. Irregular shaping of polystyrene nanosphere array by plasma etching

    National Research Council Canada - National Science Library

    Luo, Hao; Liu, Tingting; Ma, Jun; Wang, Wei; Li, Heng; Wang, Pengwei; Bai, Jintao; Jing, Guangyin

    2013-01-01

    .... Here, by plasma etching, the controllable tailoring of the nanosphere is realized and its morphology dependence on the initial shape, microscopic roughness, and the etching conditions is investigated quantitatively...

  16. Influence of Electron Cyclotron Resonance Plasma Etching on the Optical and Wetting Properties of Glass%ECR等离子体刻蚀对玻璃光学和润湿性能的影响

    Institute of Scientific and Technical Information of China (English)

    宋雪梅; 王亮; 陈宇; 孟祥曼; 王波; 严辉

    2015-01-01

    In order to improve the transmittance and self-cleaning properties of solar cell cover glass. The borosilicate glass was etched by electron cyclotron resonance ( ECR ) plasma etching with metal nanoparticles mask. The glass surface after etching was observed by scanning electron microscopy ( SEM ) . The change of the transmittance of the glass after etching was measured by the UV-VIS spectrophotometer. The wetting property of the bare and etching glass was determined by the contact angle instrument. The results show the mountainous structure was formed on glass substrate after ECR plasma etching,and its average size ranges from 80 nm to 140 nm. The visible light transmittance of the glass is effectively improved. It increases from 91% to 94. 4% with the bias etching. Moreover, It enhancs the hydrophilicity on the surface of the glass. The lower contact angle (θc) of 7. 4° is obtained compared to the bare glass substrate (θc~47. 2°). The self-cleaning properties are improved.%为了提高太阳能电池盖板玻璃的透过率和自清洁性能,采用电子回旋共振( ECR)等离子体刻蚀与金属颗粒掩膜结合的方法刻蚀硼硅酸盐玻璃,采用扫描电镜( SEM)对刻蚀后玻璃表面形貌进行了观察,采用分光光度计测量了刻蚀前后玻璃透过率变化,并用接触角仪测定了刻蚀前后玻璃表面润湿性变化. 结果表明:经过ECR等离子体刻蚀后,在玻璃表面形成多山峰状纳米结构,平均尺寸约在80~140 nm,并有效提高了玻璃的可见光透过率,尤其是在有偏压刻蚀后透过率由原来91%提高到94. 4%,同时,玻璃表面亲水性增强,接触角θc由原来的47. 2°变为7. 4°,自清洁性能得到提高.

  17. Etching with atomic precision by using low electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Monroy, G. A.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2017-07-01

    There has been a steady increase in sub-nm precision requirement for many critical plasma etching processes in the semiconductor industry. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in conventional radio-frequency (RF) plasma processing systems, even during layer-by-layer or ‘atomic layer’ etch. To meet these increasingly stringent requirements, it is necessary to have an accurate control over ion energy and ion/radical composition during plasma processing. In this work, a new plasma etch system designed to facilitate atomic precision plasma processing is presented. An electron sheet beam parallel to the substrate surface is used to produce a plasma in this system. This plasma has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i  plasmas. Electron beam plasmas also have a higher ion-to-radical ratio compared to RF plasmas, so this plasma etch system employs an independent radical source for accurate control over relative ion and radical concentrations. A low frequency RF bias capability that allows control of ion energy in the 2-50 eV range is another important component of this plasma etch system. The results of etching of a variety of materials and structures in this low-electron temperature plasma system are presented in this study: (1) layer-by-layer etching of p-Si at E i ~ 25-50 eV using electrical and gas cycling is demonstrated; (2) continuous etching of epi-grown µ-Si in Cl2-based plasmas is performed, showing that surface damage can be minimized by keeping E i  etching at low E i.

  18. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  19. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, K.; Kodama, H. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan); Suzuki, K. [TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006 (Japan); Sawabe, A. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan)

    2016-02-01

    The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. - Highlights: • The etch pits formed by plasma etching on heteroepitaxial diamond have been clarified by TEM. • The origin of etch pit was mainly [001] threading dislocation. • These dislocations were identified as edge and 45° mixed type. • The correlation between dislocation types and etch pit shape.

  20. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

    Directory of Open Access Journals (Sweden)

    Jian Yang

    2015-02-01

    Full Text Available We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

  1. Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Araki, N.; Miyata, M.; Kitagawa, S.; Kojima, M.; Ozawa, J.; Tsubota, S.; Yamaguchi, T.; Agata, Y.

    2017-09-01

    Dry etching characteristics of single crystal (100) CdTe epitaxial layers grown on GaAs substrates were studied using CH4, H2, and Ar as process gases in an electron cyclotron resonance plasma. A smooth and anisotropic etching was obtained with CH4, H2, and Ar. No hydrocarbon polymer was found on the etched surface, which was confirmed by x-ray photoelectron spectroscopy measurement. Etching of the CdTe surface was also possible with H2 and Ar; however, no etching was observed in the absence of H2. Dependence of the etch rate on plasma gas composition and flow rates was studied. Mechanisms of etching with and without CH4 supply were also studied. Etched CdTe layers also showed no deterioration of electrical properties, which was confirmed by photoluminescence measurement at 4.2 K and Hall measurement at 300 K.

  2. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  3. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  4. Nanometer scale vacuum lithography using plasma polymerization and plasma etching

    CERN Document Server

    Kim, S O

    1998-01-01

    Thin films of plasma polymerization were fabricated through plasma polymerization of interelectrode capacitively coupled gas flow system. After delineating the pattern with an accelerating voltage of 30kV, ranging the dose of 1 approx 500 mu C/cm sup 2 , the pattern was developed with a dry type and formed by plasma etching. By analyzing the molecule structure using FT-IR ( Fourier Transform-Infrared Spectrometry), it was confirmed that the thin films of PPMST (Plasma Polymerized Methylmethacrylate+Styrene+Tetramethyltin) contained the functional radicals of the MST (Methylmethacrylate sub S tyrene+Tetramethyltin) monomer. The Thin films of PPMST had a highly cross-linked structure resulting in a higher molecule weight than the conventional resist. The deposition rate of the PPMST thin films was 230 approx 600 A/min as a function of 50 approx 200 W power and 200 approx 60 A/min as a function 0.1 approx 0.7 Torr pressure. The etching rate of the thin films of PPMST was 875 approx 3520 A/min as a function of 50...

  5. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  6. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  7. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  8. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  9. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/m

  10. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2

  11. Selective Plasma Etching of Polymeric Substrates for Advanced Applications.

    Science.gov (United States)

    Puliyalil, Harinarayanan; Cvelbar, Uroš

    2016-06-07

    In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a "zoo" of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  12. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    Directory of Open Access Journals (Sweden)

    Harinarayanan Puliyalil

    2016-06-01

    Full Text Available In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  13. Controlled MoS₂ layer etching using CF₄ plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-04

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.

  14. Patterned Platinum Etching Studies in an Argon High Density Plasma

    Science.gov (United States)

    Delprat, Sébastien; Chaker, Mohamed; Margot, Joëlle; Pépin, Henri; Tan, Liang; Smy, Tom

    1998-10-01

    A high-density surface-wave Ar plasma operated in the low pressure regime is used to study pure physical etching characteristics of platinum thin films. The platinum samples are RF biased so as to obtain a maximum DC self-bias voltage of 150 V. The sputter-etching characteristics are investigated as a function of the magnetic field intensity, the self-bias voltage and the gas pressure. At 1 mtorr, the etch rate is found to be a unique linear function of both the self-bias voltage and the ion density, independently of the magnetic field intensity value. However, even though the ion density increases, the etch rate is found to decrease with increasing pressure. In the low pressure regime, etch rates as high as 2000 A/min are obtained with a good selectivity over resist. Without any optimization of the etching process, we were able to etch 0.5 micron Pt trenches, 0.6 micron thick yielding fence-free profiles and sidewall angles (75º) that already meets the present industrial requirements of NVRAM technology.

  15. Restructured graphene sheets embedded carbon film by oxygen plasma etching and its tribological properties

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Meiling [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Yang, Lei [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Fan, Xue [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2015-12-01

    Highlights: • Oxygen plasma etching was developed to improve tribological properties of GSEC film. • Etching restructured 3 nm top layer with smaller crystallite size and higher sp{sup 3} fraction. • The etched film had smoother surface, enhanced mechanical properties, longer wear life. • High electrical conductivity and strong magnetism were retained after etching. - Abstract: An oxygen plasma etching technique was introduced for improving the tribological properties of the graphene sheets embedded carbon (GSEC) film in electron cyclotron resonance plasma processing system. The nanostructural changing in the film caused by oxygen plasma etching was examined by transmission electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy, showing that the 3 nm thick top surface layer was restructured with smaller graphene nanocrystallite size as well as higher sp{sup 3} bond fraction. The surface roughness, mechanical behavior and tribological properties of the original GSEC and oxygen plasma treated GSEC films were compared. The results indicated that after the oxygen plasma treatment, the average roughness decreased from 20.8 ± 1.1 nm to 1.9 ± 0.1 nm, the hardness increased from 2.3 ± 0.1 GPa to 2.9 ± 0.1 GPa, the nanoscratch depth decreased from 64.5 ± 5.4 nm to 9.9 ± 0.9 nm, and the wear life increased from 930 ± 390 cycles to more than 15,000 frictional cycles. The origin of the improved tribological behavior was ascribed to the 3 nm thick graphene nanocrystallite film. This finding can be expected for wide applications in nanoscale surface engineering.

  16. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage

    Science.gov (United States)

    Ding, Ruhang

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but with challenges addressed herein, including (1) control of etch profiles and (2) damage to etched feature sidewalls that affects device performance. (1) Fluorocarbon-based plasma etching often results in device profiles with undercuts due to preferential etching of SiGe over silicon. A C4F8/N2/Ar etch plasma gas mixture introduced here has been successfully used to achieve straight sidewalls through heterostructure layers by formation of a fluorocarbon inhibitor film on feature sidewalls to prevent undercutting. (2) Chemical and structural changes in the semiconductor at feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device, known as the 2-dimensional electron gas (2DEG). In experiments designed to better understand the mechanisms of plasma-induced sidewall damage, damage to straight wires was characterized both by the width of a non-conductive "sidewall depletion" region at the device sidewall, and by the noise level factor, gamma H/N, determined from spectra of low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of defects with increased plasma exposure time. Excess negative charge incorporated into the fluorocarbon inhibitor film could be another contributing factor. Other factors considered, including defects at the bottom of etched features as well as leakage current bypassing the wire, are ruled out as their contribution is expected to diminish as the distance between the 2DEG and feature bottom increases. The noise level factor, gammaH /N, shows a maximum with increasing etch depth, possibly the result of two competing effects: increasing ion dose and decreasing leakage current. The noise level shows a minimum at an ion bombardment energy

  17. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  18. Selective etching of graphene edges by hydrogen plasma.

    Science.gov (United States)

    Xie, Liming; Jiao, Liying; Dai, Hongjie

    2010-10-27

    We devised a controlled hydrogen plasma reaction at 300 °C to etch graphene and graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force microscope imaging showed that the etching rates for single-layer and few-layer (≥2 layers) graphene are 0.27 ± 0.05 nm/min and 0.10 ± 0.03 nm/min, respectively. Meanwhile, Raman spectroscopic mapping revealed no D band in the planes of single-layer or few-layer graphene after the plasma reaction, suggesting selective etching at the graphene edges without introducing defects in the basal plane. We found that hydrogen plasma at lower temperature (room temperature) or a higher temperature (500 °C) could hydrogenate the basal plane or introduce defects in the basal plane. Using the hydrogen plasma reaction at the intermediate temperature (300 °C), we obtained narrow, presumably hydrogen terminated GNRs (sub-5 nm) by etching of wide GNRs derived from unzipping of multiwalled carbon nanotubes. Such GNRs exhibited semiconducting characteristics with high on/off ratios (∼1000) in GNR field effect transistor devices at room temperature.

  19. Anisotropic oxygen plasma etching of colloidal particles in electrospun fibers.

    Science.gov (United States)

    Ding, Tao; Tian, Ye; Liang, Kui; Clays, Koen; Song, Kai; Yang, Guoqiang; Tung, Chen-Ho

    2011-02-28

    Oxygen plasma etching of electrospun polymer fibers containing spherical colloids is presented as a new approach towards anisotropic colloidal nanoparticles. The detailed morphology of the resulting nanoparticles can be precisely controlled in a continuous way. The same approach is also amenable to prepare inorganic nanoparticles with double-sided patches.

  20. Alcatel Vacuum Technology A Recognized Leader in Deep Plasma Etching

    Institute of Scientific and Technical Information of China (English)

    阿尔卡特真空技术(上海)有限公司

    2005-01-01

    @@ Its first equipment based on a Alcatel patented Inductive Coupled Plasma (ICP) source, with independent source power and substrate bias control for deep etching of silicon was launched in 1993. The exponential growth potential of the MEMS (Micro Electro Mechanical Systems) industry gave birth to the Micro Machining Systems business group (MMS) in 1994.

  1. Fabrication of polymer nanowires via maskless O2 plasma etching.

    Science.gov (United States)

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.

  2. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    Science.gov (United States)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  3. Effect of plasma dissociation on fluorocarbon layers formed under C4F8/Ar pulsed plasma for SiO2 etching

    Science.gov (United States)

    Matsui, Miyako; Usui, Tatehito; Ono, Tetsuo

    2017-06-01

    We investigated the effects of gas pressure on the dissociation of C4F8/Ar plasma and the formations of fluorocarbon layers on etched materials by SiO2 etching using pulsed-microwave electron-cyclotron-resonance plasma. Dissociated radicals and molecules of C x F y and CF x species generated from C4F8/Ar plasma were measured by ion attachment mass spectrometry, which is a fragment-free method. The thickness and chemical state of the fluorocarbon layers formed on the etched materials were analyzed by X-ray photoelectron spectroscopy. Higher selective etching of SiO2 relative to Si3N4 was possible at 2.0 Pa but not at 0.5 Pa. Thick fluorocarbon layers, which protect etched materials from ion bombardment, formed on both SiO2 and Si3N4 surfaces; thus, both the SiO2 and Si3N4 etching rates were reduced at a high pressure. However, the CF2 flux ratio increased while the flux ratio of C2F2 decreased as the pressure increased. The increased flux of CF2 enhanced SiO2 etching because CF2 is the main etchant of SiO2. This CF2-rich plasma formed CF2-rich fluorocarbon layers, enhancing the SiO2 etching reaction.

  4. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  5. Plasma-etched nanostructures for optical applications (Presentation Recording)

    Science.gov (United States)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  6. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Hendrickson, Joshua R., E-mail: joshua.hendrickson.4@us.af.mil; Leedy, Kevin; Cleary, Justin W. [Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States); Vangala, Shivashankar [Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States); SURVICE Engineering, 4141 Colonel Glenn Highway, Dayton, Ohio 45431 (United States); Nader, Nima [Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States); Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060 (United States); Guo, Junpeng [Department of Electrical and Computer Engineering, University of Alabama in Huntsville, 301 Sparkman Drive, Huntsville, Alabama 35899 (United States)

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  7. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  8. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    Science.gov (United States)

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications.

  9. Modeling of the effects of die scale features on bulk plasma conditions in plasma etching equipment

    Energy Technology Data Exchange (ETDEWEB)

    Grapperhaus, M.J.; Kushner, M.J. [Univ. of Illinois, Urbana, IL (United States)

    1997-12-31

    The patterning of the wafer during microelectronics fabrication can have a significant effect on bulk plasma properties as well as producing local pattern dependent etch rates. Sputtering of photoresist, loading effects, and other surface interactions couple the chemistry at the wafer surface to the bulk plasma chemistry. A model has been developed which uses a Monte Carlo simulation to model quasi-steady state die scale surface chemistry in plasma etching reactors. This model is integrated within the Hybrid Plasma Equipment Model (HPEM) which resolves two-dimensional reactor scale plasma conditions. The HPEM consists of an electromagnetics, electron Monte Carlo simulation, and a fluid plasma modules. The surface Monte Carlo simulation is used to modify the flux boundary condition at the wafer surface within the HPEM. Species which react on the surface, or which are created at the surface are tracked on and near the wafer surface.this gives a quasi-steady state surface chemistry reaction mechanism resolved in two dimensions on the die scale. An inductively coupled etching reactor is used to demonstrate the effect of surface chemistry on bulk plasma conditions over a range of pressures from 10 to 100 mtorr, 100`s w of inductively coupled power and 10`s to 100`s V rf applied substrate voltage. Under high etch rate conditions, macroloading effects are shown. As pressure is varied from 10 to 100 mtorr and the effect of local photoresist sputter and redeposit on nearby exposed etch area is shown to increase which leads to different etch rates near the boundaries of etching regions versus unexposed regions.

  10. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  11. Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching

    Science.gov (United States)

    Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide; Gomez, Carmen; Leo, Giuseppe; Favero, Ivan

    2017-01-01

    Photonic lattices of mutually interacting indistinguishable cavities represent a cornerstone of collective phenomena in optics and could become important in advanced sensing or communication devices. The disorder induced by fabrication technologies has so far hindered the development of such resonant cavity architectures, while post-fabrication tuning methods have been limited by complexity and poor scalability. Here we present a new simple and scalable tuning method for ensembles of microphotonic and nanophotonic resonators, which enables their permanent collective spectral alignment. The method introduces an approach of cavity-enhanced photoelectrochemical etching in a fluid, a resonant process triggered by sub-bandgap light that allows for high selectivity and precision. The technique is presented on a gallium arsenide nanophotonic platform and illustrated by finely tuning one, two and up to five resonators. It opens the way to applications requiring large networks of identical resonators and their spectral referencing to external etalons.

  12. Spent nuclear fuel recycling with plasma reduction and etching

    Science.gov (United States)

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  13. Spent nuclear fuel recycling with plasma reduction and etching

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  14. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lijun, E-mail: lijunwang@mail.xjtu.edu.cn; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    Graphical abstract: Pin-ring electrode, double-ring electrode and multi-electrode kHz AC atmospheric pressure plasma jet were used to etch PR on Si wafer, and a corresponding parametric study was carefully investigated. Display Omitted - Highlights: • The surface roughness increases dramatically after APPJ treatment. • The etch rate of the pin-ring electrode APPJ is the highest than that of the multi-electrode APPJ and the double-ring electrode APPJ. • Ar APPJ has a much higher etch rate and more irregular etch trace than He APPJ. • The effective etching initially increases and then decreases with the increment of plasma jet outlet to PR surface distance. - Abstract: In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  15. Atom-Scale Reaction Pathways and Free-Energy Landscapes in Oxygen Plasma Etching of Graphene.

    Science.gov (United States)

    Koizumi, Kenichi; Boero, Mauro; Shigeta, Yasuteru; Oshiyama, Atsushi

    2013-05-16

    We report first-principles molecular dynamics calculations combined with rare events sampling techniques that clarify atom-scale mechanisms of oxygen plasma etching of graphene. The obtained reaction pathways and associated free-energy landscapes show that the etching proceeds near vacancies via a two-step mechanism, formation of precursor lactone structures and the subsequent exclusive CO2 desorption. We find that atomic oxygen among the plasma components is most efficient for etching, providing a guidline in tuning the plasma conditions.

  16. Potential applications of an electron cyclotron resonance multicusp plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, C.C.; Berry, L.A.; Gorbatkin, S.M.; Haselton, H.H.; Roberto, J.B.; Stirling, W.L. (Oak Ridge National Laboratory, Oak Ridge, TN (USA))

    1990-05-01

    An electron cyclotron resonance (ECR) multicusp plasmatron has been developed by feeding a multicusp bucket arc chamber with a compact ECR plasma source. This novel source produces large (about 25 cm diam), uniform (to within {plus minus}10%), dense ({gt}10{sup 11} cm{sup {minus}3}) plasmas of argon, helium, hydrogen, and oxygen. It has been operated to produce an oxygen plasma for etching 12.7 cm (5 in.) positive photoresist-coated silicon wafers with uniformity within {plus minus}8%. Results and potential applications of this new ECR plasma source for plasma processing of thin films are discussed.

  17. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    Science.gov (United States)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  18. Thermal compression chip interconnection using organic solderability preservative etched substrate by plasma processing.

    Science.gov (United States)

    Cho, Sung-Won; Choi, JoonYoung; Chung, Chin-Wook

    2014-12-01

    The solderability of copper organic solderbility preservative (CuOSP) finished substrate was enhanced by the plasma etching. To improve the solderability of TC interconnection with the CuOSP finished substrate, the plasma etching process is used. An Oxygen-Hydrogen plasma treatment process is performed to remove OSP material. To prevent the oxidation by oxygen plasma treatment, hydrogen reducing process is also performed before TC interconnection process. The thickness of OSP material after plasma etching is measured by optical reflection method and the component analysis by Auger Electron Spectroscopy is performed. From the lowered thickness, the bonding force of TC interconnection after OSP etching process is lowered. Also the electrical open/short test was performed after assembling the completed semiconductor packaging. The improved yield due to the plasma etching process is achieved.

  19. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    CERN Document Server

    Astakhov, D I; Lee, C J; Ivanov, V V; Krivtsun, V M; Yakushev, O; Koshelev, K N; Lopaev, D V; Bijkerk, F

    2015-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.

  20. Polymer masks for structured surface and plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Vital, Alexane [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Vayer, Marylène, E-mail: marylene.vayer@univ-orleans.fr [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Sinturel, Christophe [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Tillocher, Thomas; Lefaucheux, Philippe; Dussart, Rémi [Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France)

    2015-03-30

    Graphical abstract: - Highlights: • Sub-micrometric silicon structures were prepared by cryogenic plasma etching. • Polymer templates based on phase-separated films of PS/PLA were used. • Silica structured masks were prepared by filling the polymer templates. • Etching of underlying silicon through silica templates gave original structures. - Abstract: Silica and silicon structures have been prepared at the sub-micrometer length-scale, using laterally phase-separated thin films of poly(styrene) (PS) and poly(lactic acid) (PLA) homopolymer blends. The selective removal of one polymer and the filling of the released space by silica precursor solution led, after calcination, to silica structures on silicon such as arrays of bowl-shape features or pillars, layers with through or non-through cylindrical holes, which has not been observed for some of them. The control of the morphology of the initial polymer film was a key point to achieve such type of structures. Particularly relevant was the use of solvent vapor annealing (vs thermal annealing) of the initial spin-coated films that favored and stabilized laterally phase-separated morphologies. Characteristic dimension of the domains were shown to be coupled with the thickness of the film, thinner films giving smaller domain sizes. Despite a relatively high incompatibility of the two polymers, a macro-phase separation was prevented in all the studied conditions. Sub-micrometric domains were formed, and for the thinner films, nanometric domains as small as 74 nm in size can be obtained. The silica structures formed by the infiltration of the polymer templates were used as hard masks for the cryogenic etching of underlying silicon. New structured surfaces, arrays of silicon pillars which can be plain or hollow at the upper part or arrays of cylindrical holes were formed. A selectivity as high as 21 was obtained using this type of mask for 1.5 μm deep holes having a typical diameter of 200 nm.

  1. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  2. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    Science.gov (United States)

    Wang, Lijun; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  3. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  4. A 3-dimensional model for inductively coupled plasma etching reactors: Coil generated plasma asymmetries

    Energy Technology Data Exchange (ETDEWEB)

    Kushner, M.J.; Collison, W.Z.; Grapperhaus, M.J. [Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering

    1996-12-31

    Inductively Coupled Plasma (ICP) reactors are being developed as high plasma density, low gas pressure sources for etching and deposition of semiconductor materials. In this paper, the authors describe a 3-dimensional, time dependent model for ICP reactors whose intent is to provide an infrastructure to investigate asymmetries in plasma etching and deposition tools. The model is a 3-dimensional extension of a previously described 2-dimensional simulation called the Hybrid Plasma Equipment Model (HPEM). HPEM-3D consists of an electromagnetics module (EMM), a Boltzmann-electron energy module (BEM) and a fluid-chemical kinetics simulation (FKS). The inductively coupled electromagnetic fields are produced by the EMM. Results from HPEM-3D will be discussed for reactors using etching (Cl{sub 2}, BCl{sub 3}) and non-etching (Ar, Ar/N{sub 2}) gas mixtures, and which have geometrical asymmetries such as wafer clamps and load-lock bays. The authors show how details in the design of the coil, such as the value of the termination capacitance or number of turns, lead to azimuthal variations in the inductive electric field.

  5. Plasma etching of cavities into diamond anvils for experiments at high pressures and high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Weir, S.T.; Cynn, H.; Falabella, S.; Evans, W.J.; Aracne-Ruddle, C.; Farber, D.; Vohra, Y.K. (LLNL); (UAB)

    2012-10-23

    We describe a method for precisely etching small cavities into the culets of diamond anvils for the purpose of providing thermal insulation for samples in experiments at high pressures and high temperatures. The cavities were fabricated using highly directional oxygen plasma to reactively etch into the diamond surface. The lateral extent of the etch was precisely controlled to micron accuracy by etching the diamond through a lithographically fabricated tungsten mask. The performance of the etched cavities in high-temperature experiments in which the samples were either laser heated or electrically heated is discussed.

  6. Gate oxide punching thru mechanism in plasma dry etching

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.

  7. Cavity Ring-Down Spectroscopy of Etching Plasmas

    Science.gov (United States)

    Booth, Jean-Paul; Cunge, Gilles; Biennier, Ludovic; Romanini, Daniele; Katachanov, Alexander

    1999-10-01

    Many of the reactive species of interest in etching plasmas absorb light in the UV spectral region (200 ~ 300 nm). Measurement of these weak absorbances (10-2 ~ 10-4 for a single pass) allows their absolute concentration to be determined. Previously, low-resolution spectra have been obtained using broad-band absorption spectroscopy, using a Xe arc lamp as the light source and a small monochromator equipped with a CCD Camera. Here we report high-resolution measurements using the recently developed Cavity Ring-Down Spectroscopy (CRDS) technique. The pulsed tunable output of an excimer pumped doubled dye laser was injected into a high-Q optical cavity in which the plasma is included. The absorbance as a function of wavelength is then deduced from the lifetime of the light pulse in the cavity. This technique offers the possibility of real-time (1 second) absolute concentration measurements. Results have been obtained for the detection of CF, CF_2, AlF and SiF2 radicals in capacitively-coupled radio-frequency plasmas in fluorocarbon gases. However, the deduction of absolute concentrations from CRDS spectra is complicated by the phenomenon of non-single exponential decays when the line-width of the laser is greater then that of the transition observed.

  8. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  9. Etching high aspect ratio structures in silicon using sulfur hexafluoride/oxygen plasma

    Science.gov (United States)

    Belen, Rodolfo Jun

    Plasma etching of high aspect ratio structures in Si is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to etch deep features anisotropically with high etch rates and selectivities to the mask while maintaining good uniformity and reproducibility. This study investigates the etching of deep sub-half-micron diameter holes in Si using SF6/O 2 plasma. Etching experiments and plasma diagnostics are combined with modeling to gain a fundamental understanding of the etching and passivation kinetics and mechanism necessary in developing and scaling-up processes. Etching experiments are conducted in an inductively coupled plasma reactor with a planar coil. The substrate electrode is biased with a separate rf power supply to achieve independent control of the ion flux and energy. The effects of pressure, rf-bias and SF6-to-O2 ratio in the feed gas on the etch rate, selectivity and feature profile shape are studied using Si wafers patterned with 0.35 mum-diameter holes in a SiO2 mask. Visualization of profiles using scanning electron microscopy is complemented by plasma diagnostics such as mass spectrometry and actinometry. Simultaneous with experiments, reactor-scale and feature-scale models are developed to quantify the etching and passivation kinetics and identify the important kinetic parameters that affect feature profile evolution. Information from plasma diagnostics and previously published data are used to reduce the degrees of freedom in the model. Experiments are designed to directly measure kinetic parameters such as the chemical etch rate constant and the incidence angle dependence of the etching yield. Experimentally inaccessible parameters such as the sticking coefficients, etching yield and ion scattering parameters are determined through feature profile simulation. The key internal plasma parameters that affect profile evolution are the F-to-O and F

  10. Etching Mechanism of Niobium in Coaxial Ar/Cl2 RF Plasma

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Phillips, L; Vušković, L

    2014-01-01

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, RF power, DC bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  11. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Janardan [Old Dominion Univ., Norfolk, VA (United States); Im, Do [Old Dominion Univ., Norfolk, VA (United States); Popovic, Svetozar [Old Dominion Univ., Norfolk, VA (United States); Valente-Feliciano, Anne -Marie [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Phillips, H. Larry [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Vuskovic, Leposova [Old Dominion Univ., Norfolk, VA (United States)

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  12. Fabrication of nanostructures on polyethylene terephthalate substrate by interference lithography and plasma etching.

    Science.gov (United States)

    Zhu, Mei; Li, Bihan; Choi, W K

    2013-08-01

    We report results of an attempt to create nanostructures on polyethylene terephthalate substrate using the interference lithography and plasma etching technique. Methods to create nanogrooves, nanopillars, nanofins and nanoholes have been presented. The effects of chemical and physical etching associated with plasma etching on the synthesis of nanostructures were examined in detail. Different etch rates and anisotropy as a function of plasma power and pressure were reported and explained, offering good understanding of the physics of the etching process. Ways to improve anisotropy have been suggested and experimentally verified. We show that this method can produce nanostructured substrate with wide surface coverage and good uniformity. The flexibility of this method was demonstrated in that the period and shapes of the nanopattern can be varied easily without resorting to complicated fabrication processes and machinery. Our method brings forth an easy and cost-effective way to create uniform nanostructures on a large area in a controllable fashion.

  13. Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

    Science.gov (United States)

    Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

    2012-08-01

    We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

  14. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    Energy Technology Data Exchange (ETDEWEB)

    SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J.; REN,F.

    1999-11-03

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

  15. Deep anisotropic dry etching of silicon microstructures by high-density plasmas

    NARCIS (Netherlands)

    Blauw, M.A.

    2004-01-01

    This thesis deals with the dry etching of deep anisotropic microstructures in monocrystalline silicon by high-density plasmas. High aspect ratio trenches are necessary in the fabrication of sensitive inertial devices such as accellerometers and gyroscopes. The etching of silicon in fluorine-based

  16. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    CERN Document Server

    Vitale, S A

    2002-01-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F sub 2 , Cl sub 2 , and HBr high density plasmas, and Cl sub 2 +HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F sub 2 , Cl sub 2 , HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitroge...

  17. Tailoring particle arrays by isotropic plasma etching: an approach towards percolated perpendicular media

    NARCIS (Netherlands)

    Brombacher, C.; Saitner, M.; Pfahler, C.; Plettl, A.; Ziemann, P.; Makarov, D.; Assmann, D.; Siekman, Martin Herman; Abelmann, Leon; Albrecht, M.

    2009-01-01

    Plasma etching of densely packed arrays of polystyrene particles leads to arrays of spherical nanostructures with adjustable diameters while keeping the periodicity fixed. A linear dependence between diameter of the particles and etching time was observed for particles down to sizes of sub-50 nm.

  18. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  19. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    Science.gov (United States)

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  20. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  1. Potential applications of an electron cyclotron resonance multicusp plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, C.C.; Berry, L.A.; Gorbatkin, S.M.; Haselton, H.H.; Roberto, J.B.; Schechter, D.E.; Stirling, W.L.

    1990-03-01

    An electric cyclotron resonance (ECR) multicusp plasmatron has been developed by feeding a multicusp bucket arc chamber with a compact ECR plasma source. This novel source produces large (about 25-cm- diam), uniform (to within {plus minus}10%), dense (>10{sup 11}--cm{sup {minus}3}) plasmas of argon, helium, hydrogen, and oxygen. It has been operated to produce an oxygen plasma for etching 12.7-cm (5-in.) positive photoresist-coated silicon wafers with uniformity within {plus minus}8%. Following a brief review of the large plasma source developed at Oak Ridge National Laboratory, the configuration and operation of the source are described and a discharge model is presented. Results from this new ECR plasma source and potential applications for plasma processing of thin films are discussed. 21 refs., 10 figs.

  2. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    Science.gov (United States)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  3. Anisotropic pattern transfer in ultrananocrystalline diamond films by inductively coupled plasma etching.

    Science.gov (United States)

    Park, Jong Cheon; Kim, Seong Hak; Cha, Seung Uk; Jeong, Geun; Kim, Tae Gyu; Kim, Jin Kon; Cho, Hyun

    2014-12-01

    High density plasma etching of ultrananocrystalline diamond (UNCD) films wasperformed in O2 and O2/Ar inductively coupled plasma (ICP) discharges. The O2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of -280 nm/min was obtained in 10 sccm O2/5 sccm Ar discharges. Very high etch selectivities up to -140:1 were obtained for the UNCD over Al mask layer. Anisotropic pattern transfer with a vertical sidewall profile was achieved in the 10 sccm O2/5 sccm Ar discharges at a relatively low source power (300 W) and a moderate rf chuck power (200 W).

  4. Influence of plasma etching in a multi chamber system on a-Si solar cell performance

    Science.gov (United States)

    Kausche, H.; Moeller, M.; Plaettner, R.

    The plasma-CVD deposition system consisting of two chambers and developed at Siemens can deposit 9 pin solar cells of 100 sq cm simultaneously. Cleaning of the internal surfaces coated with a-Si is performed by plasma etching. The etch gases CF4+O2, SF6 and NF3 were investigated with respect to their etch rates, their efficacy in cleaning 'hidden' parts in the chamber, and with respect to the etching reaction products affecting the performance of the subsequently deposited cells. Mass spectrometric cell performance measurements were therefore taken. The sequence of etching with CF4+O2 or NF3, glow discharge in Ar+H2, pre-deposition of a-Si and cell deposition proved to be a suitable method for achieving high cell performance.

  5. Plasma etching of polystyrene latex particles for the preparation of graphene oxide nanowalls

    Directory of Open Access Journals (Sweden)

    Bon Bittolo Silvia

    2012-01-01

    Full Text Available Graphene oxide nanowalls were prepared by casting a water dispersion of polystyrene latex particles onto a graphene oxide film followed by tetrafluoromethane plasma etching. Mild plasma etching conditions allow one to retain the oxygen functional groups on the graphene oxide nanowalls. It was found that the exposure to a xenon light source of such graphene oxide nanowalls coated with a gold thin film results in an increase of the electrical conductivity.

  6. Gas plasma etching of PEO/PBT segmented block copolymer films.

    Science.gov (United States)

    Olde Riekerink, M B; Claase, M B; Engbers, G H M; Grijpma, D W; Feijen, J

    2003-06-15

    A series of poly(ethylene oxide)/poly(butylene terephthalate) (PEO/PBT) segmented block copolymer films was treated with a radio-frequency carbon dioxide (CO(2)) or with argon (Ar) plasma. The effects of (preferential) etching on surface structure, topography, chemistry, and wettability were studied by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and contact angle measurements. In all cases, a granular-type nanostructure was formed after prolonged CO(2) plasma etching. Ar plasma etching generally did not lead to significant changes in surface structure. Regarding surface chemistry, CO(2) plasma treatment caused surface oxidation and oxidative degradation of the films while Ar plasma etching resulted mainly in the preferential removal of PEO blocks. The wettability of all films significantly increased after plasma treatment because of the creation of polar functional groups at the surface. Preliminary goat bone-marrow cell compatibility experiments have shown that all plasma-treated PEO/PBT films induced a greatly enhanced cell adhesion and/or growth compared to untreated biomaterials. This improvement was attributed to changes in surface chemistry during plasma etching rather than to changes in surface structure. These results show that plasma-treated PEO/PBT copolymers have a high potential as scaffolds for bone tissue regeneration. Copyright 2003 Wiley Periodicals, Inc. J Biomed Mater Res 65A: 417-428, 2003

  7. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    NARCIS (Netherlands)

    Astakhov, Dmitry; Goedheer, W.J.; Lee, Christopher James; Ivanov, V.V.; Krivtsun, V.M.; Yakushev, O.; Koshelev, K.N.; Lopaev, D.V.; Bijkerk, Frederik

    2016-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By

  8. N2 plasma etching processes of microscopic single crystals of cubic boron nitride

    Science.gov (United States)

    Tamura, Takahiro; Takami, Takuya; Yanase, Takashi; Nagahama, Taro; Shimada, Toshihiro

    2017-06-01

    We studied the N2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-µm-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces.

  9. Characterization of plasma etching damage on p -type GaN using Schottky diodes

    OpenAIRE

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was ...

  10. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    Science.gov (United States)

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CFx) film deposition and Ar plasma activation of the CFx film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CFx deposition half-cycle from a C4F8/Ar plasma show that an atomically thin mixing layer is formed between the deposited CFx layer and the underlying SiO2 film. Etching during the Ar plasma cycle is activated by Ar(+) bombardment of the CFx layer, which results in the simultaneous removal of surface CFx and the underlying SiO2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CFx deposition, which combined with an ultrathin CFx layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CFx film, ∼3-4 Å of SiO2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CFx layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CFx on reactor walls leads to a gradual increase in the etch per cycle.

  11. Deep dry-etch of silica in a helicon plasma etcher for optical waveguide fabrication

    Science.gov (United States)

    Li, W. T.; Bulla, D. A. P.; Love, J.; Luther-Davies, B.; Charles, C.; Boswell, R.

    2005-01-01

    Dry-etch of SiO2 layers using a CF4 plasma in a helicon plasma etcher for optical waveguide fabrication has been studied. Al2O3 thin films, instead of the conventional materials, such as Cr or photoresist, were employed as the masking materials. The Al2O3 mask layer was obtained by periodically oxidizing the surface of an Al mask in an oxygen plasma during the breaks of the SiO2 etching process. A relatively high SiO2/Al2O3 etching selectivity of ~100:1, compared with a SiO2/Al selectivity of ~15:1, was achieved under certain plasma condition. Such a high etching selectivity greatly reduced the required Al mask thickness from over 500 nm down to ~100 nm for etching over 5-μm-thick silica, which make it very easy to obtain the mask patterns with near vertical and very smooth sidewalls. Accordingly, silica wavegudies with vertical sidewalls whose roughness was as low as 10 nm were achieved. In addition, the mechanism of the profile transformation from a mask to the etched waveguide was analyzed numerically; and it was found that the slope angle of the sidewalls of the mask patterns only needed to be larger than 50° for achieving vertical sidewalls of the waveguides, if the etching selectivity was increased to 100.

  12. Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas

    Science.gov (United States)

    Miyazoe, Hiroyuki; Jagtiani, Ashish V.; Tsai, Hsin-Yu; Engelmann, Sebastian U.; Joseph, Eric A.

    2017-05-01

    We propose a very selective PMMA removal method from poly(styrene-block-methyl methacrylate) (PS-b-PMMA) copolymer using gas pulsing cyclic etching. Flow ratio of hydrogen (H2) added to carbon monoxide (CO) plasma was periodically changed to control etch and deposition processes on PS. By controlling the process time of each etch and deposition step, full PMMA removal including etching of the neutral layer was demonstrated at 28 nm pitch, while PS thickness remained intact. This is more than 10 times higher etch selectivity than conventional continuous plasma etch processes using standard oxygen (O2), CO-H2 and CO-O2-based chemistries.

  13. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  14. Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

    Science.gov (United States)

    Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

    2017-10-01

    Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma–surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough

  15. Profile Prediction and Fabrication of Wet-Etched Gold Nanostructures for Localized Surface Plasmon Resonance

    Directory of Open Access Journals (Sweden)

    Zhou Xiaodong

    2009-01-01

    Full Text Available Abstract Dispersed nanosphere lithography can be employed to fabricate gold nanostructures for localized surface plasmon resonance, in which the gold film evaporated on the nanospheres is anisotropically dry etched to obtain gold nanostructures. This paper reports that by wet etching of the gold film, various kinds of gold nanostructures can be fabricated in a cost-effective way. The shape of the nanostructures is predicted by profile simulation, and the localized surface plasmon resonance spectrum is observed to be shifting its extinction peak with the etching time. (See supplementary material 1 Electronic supplementary material The online version of this article (doi:10.1007/s11671-009-9486-4 contains supplementary material, which is available to authorized users. Click here for file

  16. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants

    DEFF Research Database (Denmark)

    Mortensen, Mikkel Saksø; Jakobsen, Stig Storgaard; Saksø, Henrik

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation...... compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri......-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner....

  17. Electron waves and resonances in bounded plasmas

    CERN Document Server

    Vandenplas, Paul E

    1968-01-01

    General theoretical methods and experimental techniques ; the uniform plasma slab-condenser system ; the hollow cylindrical plasma ; scattering of a plane electromagnetic wave by a plasma column in steady magnetic fields (cold plasma approximation) ; hot non-uniform plasma column ; metallic and dielectric resonance probes, plasma-dielectric coated antenna, general considerations.

  18. Temperature compensation of silicon Lamé resonators using etch holes: theory and design methodology.

    Science.gov (United States)

    Luschi, Luca; Iannaccone, Giuseppe; Pieri, Francesco

    2017-02-09

    We present a new approach to the temperature compensation of MEMS Lamé resonators, based on the combined effect of the doping concentration and of the geometry of etch holes on the equivalent temperature coefficients of silicon. To this purpose, we develop and validate an analytical model which describes the effect of etch holes on the temperature stability of Lamé resonators through comparison with experiments available in the literature and FEM simulations. We show that two interesting regions of the design space for Lamé resonators exist, where a cancellation of the first-order temperature coefficient of the resonance frequency is possible: [100]-oriented silicon with n-doping of 2.5∙1019 cm-3, and [110]-oriented silicon with p-doping higher than 1.4∙1020 cm-3.

  19. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  20. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    Science.gov (United States)

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.

  1. Effect of post-annealing on the plasma etching of graphene-coated-copper.

    Science.gov (United States)

    Hui, L S; Whiteway, E; Hilke, M; Turak, A

    2014-01-01

    High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas.

  2. Modeling of 2-dimensional and 3-dimensional etch profiles in high density plasma reactors

    Energy Technology Data Exchange (ETDEWEB)

    Hoekstra, R.J.; Kushner, M.J. [Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering; Sukharev, V. [LSI Logic Corp., Santa Clara, CA (United States)

    1997-12-31

    In order to model the plasma etching process from plasma generation to etch profile evolution, processes from the macroscopic reactor scale to the microscopic feature scale must be simulated. An integrated monte Carlo feature Profile Model (MCFPM) has been developed to examine the time evolution of etch profiles in high density plasma systems. By integrating the MCFPM with the Hybrid Plasma Equipment Model (HPEM), the authors are able to self-consistently determine the etch profiles for specific regions on the wafer in specific reactor geometry with specified parameters for power, chemistry, gas flow, etc. The latest improvements of the model include the effects of incoming particle angle and energy on reaction and reflection based on the results of molecular dynamics simulations. Increase the specular reflection of high energy particles leads to more vertical sidewalls and corner clearing but can also cause deformation of the bottom of the profile surface. For Chlorine etching of 2D and 3D profiles in polysilicon, the model results will be compared to experimental results in an inductively couple etching reactor. The changes due to radial location as well as sub wafer and superwafer topography be examined.

  3. Atomic-layer soft plasma etching of MoS2.

    Science.gov (United States)

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-27

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  4. Selective etching of metallic single-wall carbon nanotubes with hydrogen plasma.

    Science.gov (United States)

    Hassanien, A; Tokumoto, M; Umek, P; Vrbanič, D; Mozetič, M; Mihailović, D; Venturini, P; Pejovnik, S

    2005-02-01

    We present Raman scattering and scanning tunnelling microscopy (STM) measurements on hydrogen plasma etched single-wall carbon nanotubes (SWNTs). Interestingly, both the STM and Raman spectroscopy show that the metallic SWNTs are dramatically altered and highly defected by the plasma treatment. In addition, structural characterizations show that metal catalysts are detached from the ends of the SWNT bundles. For semiconducting SWNTs we observe no feature of defects or etching along the nanotubes. Raman spectra in the radial breathing mode region of plasma-treated SWNT material show that most of the tubes are semiconducting. These results show that hydrogen plasma treatment favours etching of metallic nanotubes over semiconducting ones and therefore could be used to tailor the electronic properties of SWNT raw materials.

  5. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    Energy Technology Data Exchange (ETDEWEB)

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  6. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Directory of Open Access Journals (Sweden)

    N. Okada

    2017-06-01

    Full Text Available We focused on inductively coupled plasma and reactive ion etching (ICP–RIE for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  7. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

    Science.gov (United States)

    Okada, N.; Nojima, K.; Ishibashi, N.; Nagatoshi, K.; Itagaki, N.; Inomoto, R.; Motoyama, S.; Kobayashi, T.; Tadatomo, K.

    2017-06-01

    We focused on inductively coupled plasma and reactive ion etching (ICP-RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions. To determine the optimum chemical etching conditions, the flow rates of Ar and Cl2, ICP power, and chamber pressure were varied in the etching of c-plane GaN layers with stripe patterns. It was determined that the combination of Ar and Cl2 flow rates of 100 sccm, chamber pressure of 7 Pa, and ICP power of 800 W resulted in the most enhanced reaction, yielding distinctive GaN structures such as pillars with inverted mesa structures for c-plane GaN and a semipolar GaN layer with asymmetric inclined sidewalls. The selectivity and etching rate were also investigated.

  8. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    Energy Technology Data Exchange (ETDEWEB)

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  9. Oxygen plasma etching-induced crystalline lattice transformation of colloidal photonic crystals.

    Science.gov (United States)

    Ding, Tao; Wang, Fei; Song, Kai; Yang, Guoqiang; Tung, Chen-Ho

    2010-12-15

    This communication describes the transformation of a colloidal crystalline lattice that was realized via oxygen plasma etching of colloidal crystals made of SiO2@PMMA core-shell microspheres. The plasma etching of the colloidal crystals proceeded nonuniformly from the top to the bottom of the colloidal crystals. The PMMA shell was etched away by the oxygen plasma in a layer-by-layer manner, and the silica core was drawn into the pit formed by the neighboring spheres in the layer below. Consequently, the crystalline lattice was transformed while the order was maintained. Scanning electron microscopy images and reflection spectra further confirmed the change in the crystalline structures. Colloidal crystals with sc and bcc lattices can be fabricated if the ratio of the polymer shell thickness to the silica core diameter is equal to certain values. More importantly, this approach may be applicable to the fabrication of various assembly structures with different inorganic particles.

  10. Oxygen plasma etching of silver-incorporated diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Marciano, F.R., E-mail: fernanda@las.inpe.b [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil); Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Bonetti, L.F. [Clorovale Diamantes Industria e Comercio Ltda, Estr. do Torrao de Ouro, 500-Sao Jose dos Campos, 12229-390, SP (Brazil); Pessoa, R.S.; Massi, M. [Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Santos, L.V.; Trava-Airoldi, V.J. [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil)

    2009-08-03

    Diamond-like carbon (DLC) film as a solid lubricant coating represents an important area of investigation related to space devices. The environment for such devices involves high vacuum and high concentration of atomic oxygen. The purpose of this paper is to study the behavior of silver-incorporated DLC thin films against oxygen plasma etching. Silver nanoparticles were produced through an electrochemical process and incorporated into DLC bulk during the deposition process using plasma enhanced chemical vapor deposition technique. The presence of silver does not affect significantly DLC quality and reduces by more than 50% the oxygen plasma etching. Our results demonstrated that silver nanoparticles protect DLC films against etching process, which may increase their lifetime in low earth orbit environment.

  11. Optimum condition of anisotropic plasma etching for improving bending properties of ionic polymer-metal composites.

    Science.gov (United States)

    Choi, N J; Lee, H K; Jung, S; Park, K H

    2010-05-01

    We presented an anisotropic plasma etching technique by reactive ion etcher (RIE) as a new pretreatment method of fabrication of ionic polymer-metal composite (IPMC). We already found that the new technique provided large displacement to the fabricated IPMC in the presence of low applied voltage. However, we did not examine the optimum condition for the anisotropic plasma etching. In this research, we tried to figure out optimum treatment condition of film in etcher. Nafion (by DuPont) films were etched using various etching time and shadow masks with various slit and space sizes. The etched samples were plated with Pt at top and bottom side by Oguro's reduction method. The surface morphology of fabricated IPMCs was characterized by SEM. And, we've measured surface resistance, bending displacement, and driving force in order to check the IPMC properties out. Here, we found that optimum condition for pre-treatment of Nafion was 1 min for etching time under shadow mask with 200 microm slit and 100 microm space.

  12. Downstream oxygen etching of low dielectric polymers using a microwave plasma

    Science.gov (United States)

    Callahan, Russell Rosaire Austin

    As dictated by the International Technology Roadmap for Semiconductors, there is an immediate need to develop low dielectric materials for use in metalization schemes in integrated circuits. Low dielectric materials are needed in order to reduce resistance-capacitance time delays, cross-talk and power. This dissertation is focused on studying the etching characteristics of a family of low dielectric polymers, the parylenes. Three types of parylene are studied: parylene-N, parylene-C, and AF4. Parylene films on silicon substrates were etched in a downstream microwave oxygen plasma system. The goal was to characterize the chemical reactions that occurred on the parylene in an oxygen radical atmosphere. First, the effects of pressure and temperature on the etch characteristics of parylene-N were studied. X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy analyses were performed on the parylene films pre- and post-etch. It was determined that hydrogen abstraction and carbonyl formation are key steps during the etch process. Next, a model was generated to describe the reactive species concentrations throughout the reactor volume, including the generation of oxygen radicals in the plasma cavity, their transport to the parylene surface, and their reaction with the parylene. The predicted results were compared to experimental etch data. Good agreement between the model and experimental data was achieved when a model consisting of data from Bell, the Joint Institute for Laboratory Astrophysics and cross-sections published by Cosby and an overall reaction order of 0.5 is compared. Other models included cross-sections published by Phelps and Lieberman. In order to further understand the etching process, the two other parylenes, parylene-C and AF-4, were etched and analyzed. The etching characteristics as a function of temperature are reported. X-ray photoelectron and infrared spectroscopic analysis of these films is also reported. The apparent activation energy

  13. High-precision spectral tuning of micro and nanophotonic cavities by resonantly enhanced photoelectrochemical etching

    CERN Document Server

    Gil-Santos, Eduardo; Lemaitre, Aristide; Gomez, Carmen; Ducci, Sara; Leo, Giuseppe; Favero, Ivan

    2015-01-01

    We present a simple method to tune optical micro- and nanocavities with picometer precision in the resonant wavelength, corresponding to an effective sub atomic monolayer control of the cavity dimension. This is obtained through resonant photo-electrochemical etching, with in-situ monitoring of the optical spectrum. We employ this technique to spectrally align an ensemble of resonant cavities in a permanent manner, overcoming the dimension variability resulting from current nanofabrication techniques. In a device containing several resonators, each is individually addressed and tuned, with no optical quality factor degradation. The technique is general and opens the way to multiple applications, such as the straightforward fabrication of networks of identical coupled resonators, or the tuning of chip-based cavities to external references.

  14. Sidewall damage in plasma etching of Si/SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ding, R.; Klein, L. J.; Friesen, Mark G.; Eriksson, M. A.; Wendt, A. E. [Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States); Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2009-07-15

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but it also presents challenges, including damage to etched feature sidewalls that affects device performance. Chemical and structural changes in device feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device. Here the authors report the results of experiments designed to better understand the mechanisms of plasma-induced sidewall damage in modulation-doped Si/SiGe heterostructures containing a two-dimensional electron gas. Damage to straight wires fabricated in the heterostructure using plasma etching was characterized both by measuring the width of the nonconductive ''sidewall depletion'' region at the device sidewall and by measuring the noise level factor {gamma}{sub H}/N determined from spectra of the low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of sidewall defects with increased plasma exposure time. Excess negative charge trapped on the feature sidewall could be another contributing factor. Defects at the bottom of etched features appear to contribute minimally. The noise level shows a minimum at an ion bombardment energy of {approx}100 eV, while the sidewall depletion width is independent of bias voltage, within experimental uncertainty. A proposed explanation of the noise trend involves two competing effects as ion energy increases: the increase in damage caused by each bombarding ion and the reduction in total number of incident ions due to shorter etch times.

  15. General fabrication of ordered nanocone arrays by one-step selective plasma etching.

    Science.gov (United States)

    Wang, Qiang; Tian, Zhaoshuo; Li, Yunlong; Tian, Shibing; Li, Yunming; Ren, Shoutian; Gu, Changzhi; Li, Junjie

    2014-03-21

    One-step selective direct current (DC) plasma etching technology is employed to fabricate large-area well-aligned nanocone arrays on various functional materials including semiconductor, insulator and metal. The cones have nanoscale apexes (∼2 nm) with high aspect ratios, which were achieved by a selective plasma etching process using only CH4 and H2 in a bias-assisted hot filament chemical vapor deposition (HFCVD) system without any masked process. The CH(3)(+) ions play a major role to etch the roughened surface into a conical structure under the auxiliary of H(+) ions. Randomly formed nano-carbon may act as an original mask on the smooth surface to initiate the following selective ions sputtering. Physical impinging of energetic ions onto the concave regions is predominant in comparison with the etching of convex parts on the surface, which is identified as the key mechanism for the formation of conical nanostructures. This one-step maskless plasma etching technology enables the universal formation of uniform nanocone structures on versatile substrates for many promising applications.

  16. Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

    Science.gov (United States)

    Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

    2017-04-01

    Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

  17. Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

    Science.gov (United States)

    Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

  18. Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

    Science.gov (United States)

    Zhang, Liheng; Verma, Amit; (Grace Xing, Huili; Jena, Debdeep

    2017-03-01

    Dry etching behavior of unintentionally-doped (\\bar{2}01) β-Ga2O3 has been studied in a BCl3/Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3/Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2O3 vertical devices for power electronics.

  19. Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

    Science.gov (United States)

    Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

    2010-09-01

    Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

  20. Fabrication of porous boron-doped diamond electrodes by catalytic etching under hydrogen–argon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Dai, Wei [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Wu, Yongheng [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Porous BDD was prepared by hydrogen–argon plasma etching with Ni nanoparticles as a catalyst. • With the increase of etching time, the pore size increases and the pore density decreases. • The etching of BDD is independent of the crystal orientation. • The porous BDD electrode exhibited much higher special capacitance than that of pristine BDD. - Abstract: Porous boron-doped diamond (BDD) was prepared by hydrogen–argon plasma etching using electrodeposited Ni nanoparticles as a catalyst. The etching process and formation mechanism of porous BDD were investigated by changing the etching time from 30 s to 300 s. Pores were produced due to the C atoms around Ni nanoparticles are easy to react with hydrogen plasma and form methane. With the increase of etching time, the pore size increased, the pore density decreased, and the pore depth first increased and then maintained unchanged. The sp{sup 2}-bonded graphitic carbons existing on the surface of BDD increase with increasing etching time due to the increase of surface area. No preferential etching was observed due to the high energy of argon plasma. The electrochemical behaviors of the pristine and porous BDD electrodes were characterized by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). The results showed that the porous BDD electrode exhibited high specific capacitance, which is attributed to its high electrical conductivity and large specific surface area. The highest specific capacitance of porous BDD electrode is 9.55 mF cm{sup −2}, which is 22 times higher than that of pristine BDD electrode. The specific capacitance retention of the porous BDD electrode reduced to 98.2% of the initial capacitance after 500 cycles and then increased to 120.0% after 10,000 cycles. For the first 500 cycles, the reduction of capacitance can be attributed to the dissolution of Ni nanoparticles that attached on the

  1. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  2. Surface loss rate of H and N radicals in H2/N2 plasma etching process

    Science.gov (United States)

    Moon, Chang Sung; Takeda, Keigo; Hayashi, Toshio; Takashima, Seigo; Sekine, Makoto; Setsuhara, Yuichi; Shiratani, Masaharu; Hori, Masaru

    2008-10-01

    As ULSI devices are down to nano-scale size, there have been many efforts to develop low dielectric constant (low-k) materials and establish the plasma etching technology. Especially, the interaction between the plasma and the surface has an enormous influence on characterizing the etching process. However, the reactions in contact with solid surface such as substrate and wall are very complicated and moreover, at present, there are many interactions unknown and they are not fully understood yet. In this study, surface loss probabilities of H, N radicals on stainless steel and organic low-k film surfaces are investigated by vacuum ultraviolet absorption spectroscopy (VUVAS) technique. The changes of H, N radical densities are quantitatively measured in H2/N2 plasma afterglow and the loss rates on each surface are evaluated. It is expected that the development of plasma etching process can be advanced by understanding the reaction of radicals with the surface during organic low-k etching process.

  3. Selective etching of semicrystalline polymers CF4 gas plasma treatment of poly(ethylene)

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Terlingen, J.G.A.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, Jan

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were

  4. Residue-free plasma etching of polyimide coatings for small pitch vias with improved step coverage

    NARCIS (Netherlands)

    Mimoun, B.A.Z.; Pham, H.T.M.; Henneken, V.; Dekker, R.

    2013-01-01

    The authors have found that patterning polyimide coatings containing organosilane adhesion promoter using pure oxygen plasma resulted in a thin silicon-rich residue layer. They show in this paper that adding small amounts of fluorine-containing gas to the etching gas mixture is necessary in order to

  5. Gas plasma etching of PEO/PBT segmented block copolymer films

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Claase, M.B.; Engbers, G.H.M.; Grijpma, Dirk W.; Feijen, Jan

    2003-01-01

    A series of poly(ethylene oxide)/poly(butylene terephthalate) (PEO/PBT) segmented block copolymer films was treated with a radio-frequency carbon dioxide (CO2) or with argon (Ar) plasma. The effects of (preferential) etching on surface structure, topography, chemistry, and wettability were studied

  6. Selective Etching of Semicrystalline Polymers: CF4 Gas Plasma Treatment of Poly(ethylene)

    NARCIS (Netherlands)

    Olde Riekerink, M.B.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, J.

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were st

  7. Residue-free plasma etching of polyimide coatings for small pitch vias with improved step coverage

    NARCIS (Netherlands)

    Mimoun, B.A.Z.; Pham, H.T.M.; Henneken, V.; Dekker, R.

    2013-01-01

    The authors have found that patterning polyimide coatings containing organosilane adhesion promoter using pure oxygen plasma resulted in a thin silicon-rich residue layer. They show in this paper that adding small amounts of fluorine-containing gas to the etching gas mixture is necessary in order to

  8. Patterning functional materials using channel diffused plasma-etched self-assembled monolayer templates

    NARCIS (Netherlands)

    George, A.; Maijenburg, A.W.; Maas, M.G.; Blank, David H.A.; ten Elshof, Johan E.

    2011-01-01

    A simple and cost-effective methodology for large-area micrometer-scale patterning of a wide range of metallic and oxidic functional materials is presented. Self-assembled monolayers (SAM) of alkyl thiols on Au were micropatterned by channel-diffused oxygen plasma etching, a method in which selected

  9. A road to hydrogenating graphene by a reactive ion etching plasma

    NARCIS (Netherlands)

    Wojtaszek, M.; Tombros, N.; Caretta, A.; van Loosdrecht, P. H. M.; van Wees, B. J.

    2011-01-01

    We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect

  10. Nanotexturing of Conjugated Polymers via One-Step Maskless Oxygen Plasma Etching for Enhanced Tunable Wettability.

    Science.gov (United States)

    Jiang, Youhua; Xu, Jian; Lee, Junghoon; Du, Ke; Yang, Eui-Hyeok; Moon, Myoung-Woon; Choi, Chang-Hwan

    2017-07-11

    A one-step maskless oxygen plasma etching process is investigated to nanopattern conjugated polymer dodecylbenzenesulfonate doped polypyrrole (PPy(DBS)) and to examine the effects of nanostructures on the inherent tunable wettability of the surface and the droplet mobility. Etching characteristics such as the geometry and dimensions of the nanostructures are systematically examined for the etching power and duration. The mechanism of self-formation of vertically aligned dense-array pillared nanostructures in the one-step maskless oxygen plasma etching process is also investigated. Results show that lateral dimensions such as the periodicity and diameter of the pillared nanostructures are insensitive to the etching power and duration, whereas the length and aspect ratio of the nanostructures increase with them. X-ray photoelectron spectroscopy analysis and thermal treatment of the polymer reveal that the codeposition of impurities on the surface resulting from the holding substrate is the primary reason for the self-formation of nanostructures during the oxygen plasma etching, whereas the local crystallinity subject to thermal treatment has a minor effect on the lateral dimensions. Retaining the tunable wettability (oleophobicity) for organic droplets during the electrochemical redox (i.e., reduction and oxidization) process, the nanotextured PPy(DBS) surface shows significant enhancement of droplet mobility compared to that of the flat PPy(DBS) surface with no nanotexture by making the surface superoleophobic (i.e., in a Cassie-Baxter wetting state). Such enhancement of the tunable oleophobicity and droplet mobility of the conjugated polymer will be of great significance in many applications such as microfluidics, lab-on-a-chip devices, and water/oil treatment.

  11. Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl2 plasmas and potential applications in plasma etching

    Science.gov (United States)

    Tian, Peng; Kushner, Mark J.

    2017-02-01

    UV/VUV photon fluxes in plasma materials processing have a variety of effects ranging from producing damage to stimulating synergistic reactions. Although in plasma etching processes, the rate and quality of the feature are typically controlled by the characteristics of the ion flux, to truly optimize these ion and photon driven processes, it is desirable to control the relative fluxes of ions and photons to the wafer. In prior works, it was determined that the ratio of VUV photon to ion fluxes to the substrate in low pressure inductively coupled plasmas (ICPs) sustained in rare gases can be controlled by combinations of pressure and pulse power, while the spectrum of these VUV photons can be tuned by adding additional rare gases to the plasma. In this work, VUV photon and ion fluxes are computationally investigated for Ar/Cl2 ICPs as used in etching of silicon. We found that while the overall ratio of VUV photon flux to ion flux are controlled by pressure and pulse power, by varying the fraction of Cl2 in the mixture, both the ratio of VUV to ion fluxes and the spectrum of VUV photons can be tuned. It was also found that the intensity of VUV emission from Cl(3p 44s) can be independently tuned by controlling wall surface conditions. With this ability to control ratios of ion to photon fluxes, photon stimulated processes, as observed in halogen etching of Si, can be tuned to optimize the shape of the etched features.

  12. Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

    Science.gov (United States)

    Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

    2011-07-01

    The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, and the etch selectivity to the Ti hard mask, gradually decreased, but the etch profile of the CoFeB films was improved. The effects of the HBr concentration and etch parameters on the etch profile of the MTJ stacks with a nanometer-sized 70 x 100 nm2 pattern were explored. At 10% HBr concentration, low ICP RF power, and low DC-bias voltage, better etch profiles of the MTJ stacks were obtained without redeposition. It was confirmed that the protective layer containing hydrogen, and the surface bombardment of the Ar ions, played a key role in obtaining a steep sidewall angle in the etch profile. Fine-pattern transfer of the MTJ stacks with a high degree of anisotropy was achieved using a HBr/Ar gas chemistry.

  13. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

    Science.gov (United States)

    Luan, P.; Knoll, A. J.; Wang, H.; Kondeti, V. S. S. K.; Bruggeman, P. J.; Oehrlein, G. S.

    2017-01-01

    The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzle-surface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.

  14. Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

    Science.gov (United States)

    Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

    2014-07-14

    We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

  15. Surface Roughening of Polystyrene and Poly(methyl methacrylate in Ar/O2 Plasma Etching

    Directory of Open Access Journals (Sweden)

    Amy E. Wendt

    2010-12-01

    Full Text Available Selectively plasma-etched polystyrene-block-poly(methyl methacrylate (PS-b-PMMA diblock copolymer masks present a promising alternative for subsequent nanoscale patterning of underlying films. Because mask roughness can be detrimental to pattern transfer, this study examines roughness formation, with a focus on the role of cross-linking, during plasma etching of PS and PMMA. Variables include ion bombardment energy, polymer molecular weight and etch gas mixture. Roughness data support a proposed model in which surface roughness is attributed to polymer aggregation associated with cross-linking induced by energetic ion bombardment. In this model, RMS roughness peaks when cross-linking rates are comparable to chain scissioning rates, and drop to negligible levels for either very low or very high rates of cross-linking. Aggregation is minimal for very low rates of cross-linking, while very high rates produce a continuous cross-linked surface layer with low roughness. Molecular weight shows a negligible effect on roughness, while the introduction of H and F atoms suppresses roughness, apparently by terminating dangling bonds. For PS etched in Ar/O2 plasmas, roughness decreases with increasing ion energy are tentatively attributed to the formation of a continuous cross-linked layer, while roughness increases with ion energy for PMMA are attributed to increases in cross-linking from negligible to moderate levels.

  16. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    Science.gov (United States)

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner.

  17. Etching of UO{sub 2} in NF{sub 3} RF Plasma Glow Discharge

    Energy Technology Data Exchange (ETDEWEB)

    John M. Veilleux

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO{sub 2} were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO{sub 2} from stainless steel substrates. Experiments were conducted using NF{sub 3} gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO{sub 2} samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO{sub 2} in the samples had a relatively low density of 4.8 gm/cm{sub 3}. Counting of the depleted UO{sub 2} on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, {sup 234}Th and {sup 234}Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about {+-} 2%. Results demonstrated that UO{sub 2} can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO{sub 2} in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 {micro}m/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO{sub 2} etching was also noted below 50 W in which etching increased up to a maximum pressure, {approximately}23 Pa, then decreased with further increases in pressure.

  18. SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER

    Institute of Scientific and Technical Information of China (English)

    T.T. Sun; Z.G. Liu; H.C. Yu; M.B. Chen; J.M. Miao

    2005-01-01

    Dry etching of silicon is an essential process step for the fabrication of Microelectromechancal system (MEMS) The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed inductively coupled plasma (ICP) etcher.The influence of resist pattern profile, and etch condition on sidewall roughness were investigated detail. The results show that the sidewall roughness of micro-trench depends on profiles of photo-resist pattern, the initial interface between the resist bottom surface and silicon surface heavily. The relationship between roughness and process optimization parameters are presented in the paper. The roughness of the sidewall has been decreased to a 20-50nm with this experiment.

  19. Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching.

    Science.gov (United States)

    Yamamura, Kazuya; Ueda, Masaki; Shibahara, Masafumi; Zettsu, Nobuyuki

    2011-04-01

    Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because a huge amount of the resonator is demanded for installing to various electronic devices. Resonance frequency of the quartz resonator is decided by the thickness of the quartz crystal wafer. Therefore, it is necessary to uniform the thickness distribution of the wafer with nanometric level. We have proposed the improvement technique of the thickness distribution of the quartz crystal wafer by numerically controlled correction using atmospheric pressure plasma which is non-contact and chemical removal technique. Heating effects of the quartz wafer in the removal rate and the correction accuracy were investigated. The heating of the substrate and compensate of the scanning speed of the worktable according to the variation of the surface temperature enabled an increase of 50% in the etching rate and 10-nanometric-level accuracy in the correction of the thickness distribution of the quartz wafer, respectively.

  20. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    Science.gov (United States)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  1. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    Production of large-area flat panel displays (FPDs) involves several pattern transfer and device fabrication steps that can be performed with dry etching technologies. Even though the dry etching using capacitively coupled plasma is generally used to maintain high etch uniformity, due to the need...... for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  2. Cyclotron resonance absorption in ionospheric plasma

    Science.gov (United States)

    Villalon, Elena

    1991-04-01

    The mode conversion of ordinary polarized electromagnetic waves into electrostatic cyclotron waves in the inhomogeneous ionospheric plasma is investigated. Near resonance the warm plasma dispersion relation is a function of the angle theta between the geomagnetic field and the density gradient and of the wave frequency omega, which lies between the electron cyclotron frequency and its doubling. The differential equations describing the electric field amplitudes near the plasma resonance are studied, including damping at the second gyroharmonic. The energy transmission coefficients and power absorbed by the cyclotron waves are calculated. The vertical penetration of the plasma wave amplitudes is estimated using a WKB analysis of the wave equation.

  3. Surface crystallization of amorphous fused silica during electron cyclotron resonance plasma etching%非晶熔石英表面等离子体刻蚀过程中的表面晶化研究

    Institute of Scientific and Technical Information of China (English)

    王锋; 吴卫东; 蒋晓东; 唐永建

    2012-01-01

    本工作采用电子回旋共振(ECR)低压等离子体刻蚀技术,刻蚀非晶熔石英表面.Ar/CF_4为反应气体刻蚀后再经O等离子体钝化,非晶熔石英表面出现晶化现象.晶化层约几百纳米厚.Ar/CF_4在ECR的电磁场作用下产生F离子与C离子,F离子使熔石英表面的Si-O共价键断裂,并释放出O离子.C离了与O离子迅速键合生成CO_2,而被断键的Si原子与四个F原子键合生成气态SiF4.熔石英原始表面被去除的同时,在新的表面留下大量不饱和Si原子.不饱和Si原子在高温条件下被O等离子钝化,形成结晶态α方石英.%After low pressure fluorine plasma ecthing and oxygen ion passivation,a crystallized layer composed of SiO_2 nano-crystal grains is observed in an amorphous fused silica surface.The depth of crystallized layer is at least several hundreds nanometers.Fluorine and carbon ion are generated from Ar/CF_4 by the method of electron cyclotron resonance(ECR).F ion breaks Si-O band of initial silica surface layer and releases O ion.Carbon ion combines with oxygen ion,and turns into CO_2,and SiF_4 is generated from fluorine and silicon.After initial surface layer is removed,unsaturated Si atom remains.Si dangling bond recombines with new O ion and then creates crystallizedα-cristobalite nano-crystal grains under a high temperature.

  4. Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications

    Science.gov (United States)

    Prévost, Emilie; Cunge, Gilles; De-Buttet, Côme; Lagrasta, Sebastien; Vallier, Laurent; Petit-Etienne, Camille

    2017-03-01

    The evolution of integrated components in the semiconductors industry is nowadays looking for ultra-high selective etching processes in order to etch high aspect ratio structures in complicated stacks of ultrathin layers. For ultra-high selective processes, typical plasma etching show limitations, while wet etching processes reach limitations due to capillary forces. For these reasons there is a great regain of interest today in chemical downstream etching systems (CDE), which combine the advantages of plasma and wet treatments. The absence of photons and ions allow to minimize damages and to achieve very high selectivity (in isotropic etching). In this work we investigated the parameters enabling to etch selectively the Si3N4 to the SiO2 by CDE. We shown that the correlation between the gas mixture and the wafer temperature is the key to obtain the desired selectivity. In order to optimize the processing window, the mixture composition (NF3/N2/O2/He) and the temperatures were screened by several DOE (Designs Of Experiments). Conditions are found in which the etching selectivity between the two silicon alloys is higher than 100, which allowed us to clean out sacrificial Si3N4 layers in very high aspect ratio (about 100) silicon trenches of nanometric size (60nm) without damaging the 10nm thin SiO2 caping layer (between the Si and the Si3N4). This demonstrates that downstream plasma etching can perform better than wet treatments in this case.

  5. The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate.

    Science.gov (United States)

    Chang, Chun-Ming; Shiao, Ming-Hua; Yang, Chin-Tien; Cheng, Chung-Ta; Hsueh, Wen-Jeng

    2014-10-01

    In this study, patterned sapphire substrates are fabricated using nanosphere lithography (NSL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Polystyrene nanospheres of approximately 600 nm diameter are self-assembled on c-plane sapphire substrates by spin-coating. The diameter of the polystyrene nanospheres is modified to adjust the etching mask pitch cycle using oxygen plasma in the ICP-RIE system. A nickel thin film mask of 100 nm thickness is deposited by electron-beam evaporation on a substrate covered with treated nanospheres. The sapphire substrate is then etched in an inductively coupled plasma system using BCl3/Ar gas, to fabricate a structure with a periodic sub-micron hole array with different sidewall intervals. The DC bias voltage, the sapphire etching rate, the surface roughness, are studied as a function of the ICP and the RF power. Different sub-micron hole arrays with spacing cycles of 89 nm, 139 nm and 167 nm are successfully fabricated on the sapphire substrate, using suitable etching parameters.

  6. Study on an Atmospheric Pressure Plasma Jet and its Application in Etching Photo-Resistant Materials

    Institute of Scientific and Technical Information of China (English)

    李海江; 王守国; 赵玲利; 叶甜春

    2004-01-01

    An atmospheric pressure radio-frequency plasma jet that can eject cold plasma has been developed. In this paper, the configuration of this type of plasma jet is illustrated and its discharge characteristics curves are studied with a current and a voltage probe. A thermal couple is used to measure the temperature distribution along the axis of the jet stream. The temperature distribution curve is generated for the He/O2 jet stream at the discharge power of 150W. This jet can etch the photo-resistant material at an average rate of 100nm/min on the surface of silicon wafers at a right angle.

  7. Development and evaluation of magnesium oxide-based ceramics for chamber parts in mass-production plasma etching equipment

    Science.gov (United States)

    Kasashima, Yuji; Tsutsumi, Kota; Mitomi, Shinzo; Uesugi, Fumihiko

    2017-06-01

    In mass-production plasma etching equipment, the corrosion of ceramic chamber parts reduces the production yield of LSI and overall equipment effectiveness (OEE) owing to contamination, short useful life, and particle generation. Novel ceramics that can improve the production yield and OEE are highly required. We develop magnesium oxide (MgO)-based ceramics and evaluate them under mass-production plasma etching conditions. The results of this study indicate that the developed MgO-based ceramics with high mechanical properties and low electric resistivity have a higher resistance to corrosion in plasma etching using CF4 gas than Si and conventional ceramic materials such as aluminum oxide and yttrium oxide.

  8. A multifunctional plasma and deposition sensor for the characterization of plasma sources for film deposition and etching

    Science.gov (United States)

    Weise, Michael; Seeger, Stefan; Harbauer, Karsten; Welzel, Thomas; Ellmer, Klaus

    2017-07-01

    Our recently reported multifunctional plasma and deposition sensor [Welzel et al., Appl. Phys. Lett. 102, 211605 (2013)] was used for the characterization of two different plasma sources: a magnetron sputtering deposition source and an ion beam source. The multifunctional sensor, based on a conventional quartz crystal monitor (microbalance) for mass increase/decrease measurements, can measure quasi-simultaneously the deposition/etching flux, the energy flux, and the charged particle flux. By moving the sensor or the plasma source stepwise against each other, the lateral (radial) flux profiles of the different sources can be measured with a lateral resolution of about 8 mm, the diameter of aperture in front of the quartz crystal. It is demonstrated that this compact and simple multifunctional sensor is a versatile tool for the characterization of different kinds of plasma sources for deposition and etching purposes. By combining the different measured quantities, the ion-to-neutral ratio and the mean energy per deposited atom can be calculated, parameters that are essential for the characterization of plasma deposition and etch processes.

  9. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

    Directory of Open Access Journals (Sweden)

    Xiaohui Du

    2016-01-01

    Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  10. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams.

    Science.gov (United States)

    Du, Xiaohui; Liu, Yifang; Li, Anlin; Zhou, Zhou; Sun, Daoheng; Wang, Lingyun

    2016-01-26

    A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE) simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale) in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  11. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    Science.gov (United States)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  12. Magnetic field effect on Al etching in a chlorine plasma discharge

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byungwhan; Lee, Dukwoo; Han, Dongil [Sejong University, Seoul (Korea, Republic of)

    2005-02-15

    The effect of a magnetic field on aluminum films is examined under various plasma conditions. For this, the etch process was characterized by a 2{sup 6-1} fractional factorial experiment. The experimental ranges of six process parameters include 50 - 250 W for the radio frequency power, 10 - 100 Torr for the pressure, 10 - 100 G for the magnetic field strength, 10 - 70 sccm for the Cl{sub 2} flow rate, 20 - 80 sccm for the BCl{sub 3} flow rate, and 20 - 80 sccm for the N{sub 2} flow rate. Relationships between the process parameters and the etch rate were modeled using a backpropagation neural network. To test the appropriateness of the trained model, we conducted 12 additional experiments. The increase in the etch rate with increasing magnetic field strength was attributed to an enhanced plasma density. The dc bias facilitated the interpretation of parameter effects. In particular, the increased etch rate at lower pressure was ascribed to the enhanced ion bombardment that occurred at a large magnetic field strength.

  13. A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

    Directory of Open Access Journals (Sweden)

    Shoubin LIU

    2016-05-01

    Full Text Available The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference surface until it reaches the MT value. Low-energy Ar plasma at a small incident angle removes materials with selective ratios of 1 : 1.6 : 2.5 : 2.9 (AlTiC/Al2O3/NiCoFe/NiFe. It was selected to form the PTR. High-energy Ar plasma at a large incident angle exhibits almost same removal rates for all materials. It was adopted to make overall removal while keeping the recessed profile. An atomic force microscope (AFM was used for measuring the recessed heights of pole tip and the MT value of the base surface. A transmission electronic microscopy (TEM was chosen to examine the thickness of subsurface damage. A batch of production showed that the recessed heights can be successfully nanofabricated with the three-step plasma etching process.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12953

  14. Nanotextured Shrink Wrap Superhydrophobic Surfaces by Argon Plasma Etching

    Directory of Open Access Journals (Sweden)

    Jolie M. Nokes

    2016-03-01

    Full Text Available We present a rapid, simple, and scalable approach to achieve superhydrophobic (SH substrates directly in commodity shrink wrap film utilizing Argon (Ar plasma. Ar plasma treatment creates a stiff skin layer on the surface of the shrink film. When the film shrinks, the mismatch in stiffness between the stiff skin layer and bulk shrink film causes the formation of multiscale hierarchical wrinkles with nano-textured features. Scanning electron microscopy (SEM images confirm the presence of these biomimetic structures. Contact angle (CA and contact angle hysteresis (CAH measurements, respectively, defined as values greater than 150° and less than 10°, verified the SH nature of the substrates. Furthermore, we demonstrate the ability to reliably pattern hydrophilic regions onto the SH substrates, allowing precise capture and detection of proteins in urine. Finally, we achieved self-driven microfluidics via patterning contrasting superhydrophilic microchannels on the SH Ar substrates to induce flow for biosensing.

  15. Nanotextured Shrink Wrap Superhydrophobic Surfaces by Argon Plasma Etching.

    Science.gov (United States)

    Nokes, Jolie M; Sharma, Himanshu; Tu, Roger; Kim, Monica Y; Chu, Michael; Siddiqui, Ali; Khine, Michelle

    2016-03-14

    We present a rapid, simple, and scalable approach to achieve superhydrophobic (SH) substrates directly in commodity shrink wrap film utilizing Argon (Ar) plasma. Ar plasma treatment creates a stiff skin layer on the surface of the shrink film. When the film shrinks, the mismatch in stiffness between the stiff skin layer and bulk shrink film causes the formation of multiscale hierarchical wrinkles with nano-textured features. Scanning electron microscopy (SEM) images confirm the presence of these biomimetic structures. Contact angle (CA) and contact angle hysteresis (CAH) measurements, respectively, defined as values greater than 150° and less than 10°, verified the SH nature of the substrates. Furthermore, we demonstrate the ability to reliably pattern hydrophilic regions onto the SH substrates, allowing precise capture and detection of proteins in urine. Finally, we achieved self-driven microfluidics via patterning contrasting superhydrophilic microchannels on the SH Ar substrates to induce flow for biosensing.

  16. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    Science.gov (United States)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  17. Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications

    Science.gov (United States)

    Gul, Banat; Ahmad, Iftikhar; Zia, Gulfam; Aman-ur-Rehman

    2016-09-01

    HBr/Cl2 plasma discharge is investigated to study the etchant chemistry of this discharge by using the self-consistent fluid model. A comprehensive set of gas phase reactions (83 reactions) including primary processes such as excitation, dissociation, and ionization are considered in the model along with 24 species. Our findings illustrate that the densities of neutral species (i.e., Br, HCl, Cl, H, and H2) produced in the reactor are higher than charged species (i.e., Cl2+, Cl-, HBr+, and Cl+). Density profile of neutral and charged species followed bell shaped and double humped distributions, respectively. Increasing Cl2 fraction in the feedback gases (HBr/Cl2 from 90/10 to 10/90) promoted the production of Cl, Cl+, and Cl2+ in the plasma, indicating that chemical etching pathway may be preferred at high Cl-environment. These findings pave the way towards controlling/optimizing the Si-etching process.

  18. Plasma etching to enhance the surface insulating stability of alumina for fusion applications

    Directory of Open Access Journals (Sweden)

    M. Malo

    2016-12-01

    Full Text Available A significant increase in the surface electrical conductivity of alumina, considered one of the most promising insulating materials for numerous applications in fusion devices, has been observed during ion bombardment in vacuum due to oxygen loss by preferential sputtering. Although this is expected to cause serious limitations to insulating components functionality, recent studies showed it is possible to restore the damaged lattice by oxygen reincorporation during thermal treatments in air. These studies also revealed a correlation between conductivity and ion beam induced luminescence, which is being used to monitor surface electrical conductivity degradation and help qualify the post irradiation recovery. Work now carried out for Wesgo alumina considers oxygen implantation and plasma etching as additional methods to improve recovered layer depth and quality. Both conductivity and luminescence results indicate the potential use of plasma etching not only for damage recovery, but also as a pre-treatment to enhance material stability during irradiation.

  19. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...... using maskless RIE in a O2 and SF6 plasma, and the surface topology was optimized for solar cell applications by varying gas flows, pressure, power and process time. The starting substrates were 156x156 mm p-type, CZ mono-, multi- and quasi-mono crystalline Si wafers, respectively, with a thickness...

  20. Aligned Carbon Nanotubes Array by DC Glow Plasma Etching for Supercapacitor

    Directory of Open Access Journals (Sweden)

    Yongfeng Luo

    2013-01-01

    Full Text Available To open the end of carbon nanotubes and make these ends connect with functional carboxyl group, aligned carbon nanotubes (CNTs arrays was etched by DC glow oxygen-argon plasma. With these open-ended carbon nanotubes array as electrode materials to build supercapacitor, we found that the capacity (32.2 F/g increased significantly than that of pure carbon nanotubes (6.7 F/g.

  1. Plasma-etching of 2D-poled glasses: A route to dry lithography

    Science.gov (United States)

    Alexandrov, S. E.; Lipovskii, A. A.; Osipov, A. A.; Reduto, I. V.; Tagantsev, D. K.

    2017-09-01

    The basis of a lithographic technique for producing glassy structures of diffractive optics, integrated optics, microfluidics, plasmonics, etc., is presented. The technique is based on the integration of two "dry" procedures: (1) glass polarization with structured (with relief surface) anodic electrode and (2) plasma-chemical etching of the poled glass. A pilot relief structure (that is, relief pattern 0.5 μm in depth) on the glass surface has been produced with the proposed technique.

  2. O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

    Science.gov (United States)

    Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

    2017-05-16

    Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O2 plasma etching and antistatic gun treatment. O2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

  3. Etching of Niobium in an Argon-Chlorine Capacitively Coupled Plasma

    Science.gov (United States)

    Radovanov, Svetlana; Samolov, Ana; Upadhyay, Janardan; Peshl, Jeremy; Popovic, Svetozar; Vuskovic, Leposava; Applied Materials, Varian Semiconductor Team; Old Dominion University Team

    2016-09-01

    Ion assisted etching of the inner surfaces of Nb superconducting radio frequency (SRF) cavities requires control of incident ion energies and fluxes to achieve the desired etch rate and smooth surfaces. In this paper, we combine numerical simulation and experiment to investigate Ar /Cl2 capacitively coupled plasma (CCP) in cylindrical reactor geometry. Plasma simulations were done in the CRTRS 2D/3D code that self-consistently solves for CCP power deposition and electrostatic potential. The experimental results are used in combination with simulation predictions to understand the dependence of plasma parameters on the operating conditions. Using the model we were able to determine the ion current and flux at the Nb substrate. Our simulations indicate the relative importance of the current voltage phase shift and displacement current at different pressures and powers. For simulation and the experiment we have used a test structure with a pillbox cavity filled with niobium ring-type samples. The etch rate of these samples was measured. The probe measurements were combined with optical emission spectroscopy in pure Ar for validation of the model. The authors acknowledge Dr Shahid Rauf for developing the CRTRS code. Support DE-SC0014397.

  4. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  5. Study on atomic layer etching of Si in inductively coupled Ar/Cl2 plasmas driven by tailored bias waveforms

    Science.gov (United States)

    Ma, Xiaoqin; Zhang, Saiqian; Dai, Zhongling; Wang, Younian

    2017-08-01

    Plasma atomic layer etching is proposed to attain layer-by-layer etching, as it has atomic-scale resolution, and can etch monolayer materials. In the etching process, ion energy and angular distributions (IEADs) bombarding the wafer placed on the substrate play a critical role in trench profile evolution, thus importantly flexibly controlling IEADs in the process. Tailored bias voltage waveform is an advisable method to modulate the IEADs effectively, and then improve the trench profile. In this paper, a multi-scale model, coupling the reaction chamber model, sheath model, and trench model, is used to research the effects of bias waveforms on the atomic layer etching of Si in Ar/Cl2 inductively coupled plasmas. Results show that different discharge parameters, such as pressure and radio-frequency power influence the trench evolution progress with bias waveforms synergistically. Tailored bias waveforms can provide nearly monoenergetic ions, thereby obtaining more anisotropic trench profile.

  6. Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma.

    Science.gov (United States)

    Watanabe, Heiji; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Hosoi, Takuji; Shimura, Takayoshi; Yasutake, Kiyoshi

    2011-04-01

    We propose low-damage and high-efficiency treatment of 4H-SiC(0001) surfaces using atmospheric pressure (AP) hydrogen plasma. Hydrogen radicals generated by the AP plasma was found to effectively remove damaged layers on SiC wafers and improve surface morphology by isotropic etching. Localized high-density AP plasma generated with a cylindrical rotary electrode provides a high etching rate of 1.6 microm/min and yields smooth morphology by eliminating surface corrugation and scratches introduced by wafer slicing and lapping procedures. However, high-rate etching with localized plasma was found to cause an inhomogeneous etching profile depending on the plasma density and re-growth of the poly-Si layer at the downstream due to the decomposition of the vaporized SiH(x) products. On the other hand, for the purpose of achieving moderate etching and ideal cleaning of SiC surfaces, we demonstrated the application of a novel porous carbon electrode to form delocalized and uniform AP plasma over 4 inches in diameter. We obtained a reasonably moderate etching rate of 0.1 microm/min and succeeded in fabricating damage-free SiC surfaces.

  7. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    Science.gov (United States)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  8. Characterization of transmission line effects and ion-ion plasma formation in an inductively coupled plasma etch reactor

    Science.gov (United States)

    Khater, Marwan H.

    2000-10-01

    The plasma and processing uniformity are greatly affected by the gas flow distribution and the source geometry in inductively coupled plasma (ICP) etch reactors. However, a reasonably uniform source design, along with uniform gas distribution, does not always guarantee uniform plasma, because transmission line (i.e. standing wave) effects also impact its performance. In this work, we demonstrate that the gas flow distribution can have a major impact on both the plasma density profiles and etch rate uniformity at low pressures where one might expect diffusion to make gas flow distribution less important. We also present an ICP source design with a geometry that enables better control over the field profiles azimuthal symmetry despite transmission line effects. B-dot probe measurements of the free space electromagnetic fields for the new source and a comparably dimensioned standard planar coil showed improved azimuthal symmetry for the new source. We have also developed a three-dimensional electromagnetic model for ICP sources that accounts for current variations along the source length due to standing wave effects. The electromagnetic field profiles obtained from the model showed good agreement with the measured field profiles. Langmuir probe measurements showed that the new ICP source generated high density (1011--1012 cm-3) plasmas at low pressures with significantly improved azimuthal symmetry of power deposition and plasma generation. In addition, polysilicon etch rate profiles on 150 mm wafers also showed improved azimuthal symmetry and uniformity with the new ICP source. The new source was then used to investigate chlorine discharge properties and their spatial profiles in continuous wave (CW) and pulsed operation. Time-resolved Langmuir probe measurements showed that electron-free or "ion-ion" chlorine plasma forms during the afterglow (i.e. power-off) due to electron attachment. Such electron-free plasma can provide both positive and negative ion fluxes to a

  9. Antifouling enhancement of polysulfone/TiO2 nanocomposite separation membrane by plasma etching

    Science.gov (United States)

    Chen, Z.; Yin, C.; Wang, S.; Ito, K.; Fu, Q. M.; Deng, Q. R.; Fu, P.; Lin, Z. D.; Zhang, Y.

    2017-01-01

    A polysulfone/TiO2 nanocomposite membrane was prepared via casting method, followed by the plasma etching of the membrane surface. Doppler broadened energy spectra vs. positron incident energy were employed to elucidate depth profiles of the nanostructure for the as-prepared and treated membranes. The results confirmed that the near-surface of the membrane was modified by the plasma treatment. The antifouling characteristics for the membranes, evaluated using the degradation of Rhodamin B, indicated that the plasma treatment enhances the photo catalytic ability of the membrane, suggesting that more TiO2 nanoparticles are exposed at the membrane surface after the plasma treatment as supported by the positron result.

  10. Fabrication of vertically aligned diamond whiskers from highly boron-doped diamond by oxygen plasma etching.

    Science.gov (United States)

    Terashima, Chiaki; Arihara, Kazuki; Okazaki, Sohei; Shichi, Tetsuya; Tryk, Donald A; Shirafuji, Tatsuru; Saito, Nagahiro; Takai, Osamu; Fujishima, Akira

    2011-02-01

    Conductive diamond whiskers were fabricated by maskless oxygen plasma etching on highly boron-doped diamond substrates. The effects of the etching conditions and the boron concentration in diamond on the whisker morphology and overall substrate coverage were investigated. High boron-doping levels (greater than 8.4 × 10(20) cm(-3)) are crucial for the formation of the nanosized, densely packed whiskers with diameter of ca. 20 nm, length of ca. 200 nm, and density of ca. 3.8 × 10(10) cm(-2) under optimal oxygen plasma etching conditions (10 min at a chamber pressure of 20 Pa). Confocal Raman mapping and scanning electron microscopy illustrate that the boron distribution in the diamond surface region is consistent with the distribution of whisker sites. The boron dopant atoms in the diamond appear to lead to the initial fine column formation. This simple method could provide a facile, cost-effective means for the preparation of conductive nanostructured diamond materials for electrochemical applications as well as electron emission devices.

  11. Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Youn, Ji Youn; Yang, Kyung Chae; Yun, Deok Hyun; Lee, Du Yeong; Shim, Tae Hun; Park, Jea Gun; Yeom, Geun Young

    2014-12-01

    The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rates of MTJ materials and the etch selectivity over W could be obtained. The use of the rf pulse biasing improved the etch selectivity of the MTJ materials over hard mask such as W further. The surface roughness and residual thickness remaining on the etched surface of the CoFeB were also decreased by using rf pulse biasing and with the decrease of rf duty percentage. The improvement of etch characteristics by substrate heating and rf pulse biasing was possibly related to the formation of more stable and volatile etch compounds and the removal of chemically reacted compounds more easily on the etched CoFeB surface. Highly selective etching of MTJ materials over the hard mask could be obtained by using the rf pulse biasing of 30% of duty ratio and by increasing the substrate temperature to 200 degrees C in the CH4/N2O (2:1) plasmas.

  12. Dry cleaning of fluorocarbon residues by low-power electron cyclotron resonance hydrogen plasma

    CERN Document Server

    Lim, S H; Yuh, H K; Yoon Eui Joon; Lee, S I

    1988-01-01

    A low-power ( 50 W) electron cyclotron resonance hydrogen plasma cleaning process was demonstrated for the removal of fluorocarbon residue layers formed by reactive ion etching of silicon dioxide. The absence of residue layers was confirmed by in-situ reflection high energy electron diffraction and cross-sectional high resolution transmission electron microscopy. The ECR hydrogen plasma cleaning was applied to contact cleaning of a contact string structure, resulting in comparable contact resistance arising during by a conventional contact cleaning procedure. Ion-assisted chemical reaction involving reactive atomic hydrogen species generated in the plasma is attributed for the removal of fluorocarbon residue layers.

  13. Surface degradation mechanism during the fluorine-based plasma etching of a low-k material for nanoscale semiconductors.

    Science.gov (United States)

    Kim, Jong Kyu; Kang, Seung Hyun; Cho, Sung Il; Lee, Sung Ho; Kim, Kyong Nam; Yeom, G Y

    2014-12-01

    The degradation of a low-k material surface during the exposure to plasma etching is one of the most serious problems to be solved for the realization of high speed semiconductor devices. In this study, the factors causing the degradation of a low-k material surface during the etching using fluorine-based plasma etching have been investigated by using XPS. As the plasma factors, active radicals, bombardment energy, and charge of the ions were considered and, as the low-k material, methyl silsesquioxane (MSQ) has been used. The XPS results showed that the ion bombardment during the plasma etching of MSQ affects the breaking of MSQ bone structure by changing the Si-O bonds and Si-C bonds to Si-F mostly, while fluorine-based radicals in the plasma mostly affect the change of Si-CH3 bonds to Si-CH(x)F(y). By removing the charge of the ions during the bombardment, the MSQ properties were further improved. When F intensity which is related to the damage of the MSQ surface is estimated, the bombardment energy, reactive radical density, and charge of the ions were responsible for -18%, -53%, -19% of the F intensity in the MSQ. Therefore, by using the neutral beam etching instead of a conventional ICP etching, the degradation on the MSQ surface estimated by the F intensity remaining on the MSQ surface could be decreased to 10%.

  14. Cyclotron resonance absorption in ionospheric plasma

    Energy Technology Data Exchange (ETDEWEB)

    Villalon, E. (Northeastern Univ., Boston, MA (USA) Geophysics Lab., Hanscom AFB, MA (USA))

    1991-04-01

    The mode conversion of ordinary polarized electromagnetic waves into electrostatic cyclotron waves in the inhomogeneous ionospheric plasma is investigated. Near resonance the warm plasma dispersion relation is a function of the angle {theta} between the geomagnetic field and the density gradient and of the wave frequency {omega}, where {Omega} {le} {omega} {le} 2{Omega} and {Omega} is the electron cyclotron frequency. The differential equations describing the electric field amplitudes near the plasma resonance are studied, including damping at the second gyroharmonic. For certain values of {omega} and {theta} (e.g., {theta} < 45{degree}, {omega} {approximately} 2{Omega}) the wave equations reduce to the parabolic cylinder equation. The energy transmission coefficients and power absorbed by the cyclotron waves are calculated. The vertical penetration of the plasma wave amplitudes is iestimated using a WKB analysis of the wave equation.

  15. Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    More and more importance has been attached to inductively coupled plasma (ICP) in semiconductor manufacture. For a deep understanding of the plasma discharge process in the etching reactor, this study made a three-dimensional simulation on the Ar plasma discharge process with the commercial software CFD-ACE, which is according to the real experiment conditions and data supplied by North Microelec-tronic Corporation. The error of the simulation results is in the range of ±20% with credibility. The numerical results show that the three-dimentional spatial distribu-tion of electron density is reduced from the chamber center to the wall. The distri-bution of electron density, electron temperature and power deposition is related to the shape and placement of the coil.

  16. Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Shigetoshi, Takushi; Okamoto, Masaki; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2017-06-01

    The etch rate of tin-doped indium oxide (or indium tin oxide, ITO) and the effects of a hydrogen-damaged layer caused by H2/Ar plasma were investigated using several surface analysis techniques. The ITO etch rate strongly depended on the H2/Ar flow rate ratio. The ITO was reduced by hydrogen injection and generated an In-rich (hydrogen-induced damage) layer on the surface. Because this In-rich layer had a higher sputtering yield, the hydrogen-damaged layer enhanced the ITO etch rate. Thus, the etching of ITO in H2/Ar plasma is determined by the balance between the formation of the In-rich damaged layer by H ion irradiation and the sputtering by Ar (relatively heavy inert gas) ions.

  17. Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge

    Energy Technology Data Exchange (ETDEWEB)

    Aragon, B.P.; Blain, M.G.; Hamilton, T.W.; Jarecki, R.L.; Woodworth, J.R.

    1998-12-09

    In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer at energies above 8.8 eV on the order of 4 x 1014 photons/cm2sec with anon- reactive wafer and 0.7 x 10 `4 photons/cm2sec with a reactive wtier. The maj ority of the radiation observed was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in Si02, but may penetrate up to a micron into the Si02 before being absorbed. Relevance of these measurements to vacuum-W photon-induced darnage of Si02 during etching is discussed.

  18. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... for their 16.8% efficient black Si cell using a metal-assisted, chemical etching method on FZ mono-crystalline Si substrates. Yoo et al. [4] use RIE similar to this work on large-area, multi-crystalline Si cells and achieve a 16.1% efficiency despite a relatively high reflectance of 13.3%. Despite several...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...

  19. An Experimental Study of the Quantum Efficiency and Topology of Copper Photocathode Due to Plasma Cleaning and Etching

    CERN Document Server

    Palmer, Denni T; Kirby, Robert

    2005-01-01

    We have developed an experimental research program to the study of the photoemission properties of copper photocathodes as a function of various plasma cleaning/etching parameters. The quantum efficiency, QE, and topology, Ra and Rpp, of Copper Photocathodes, , will be monitored while undergoing plasma cleaning/etching process. We will monitor the QE as a function of time for the various test coupons while we optimize the various plasma processing parameters. In addition, surface topology, will be studied to determine the suitability of the cleaning/etching process to produce an acceptable photoemitter. We propose to use two metrics in the evaluation of the plasma cleaning process as an acceptable cleaning method for metallic photocathodes, Quantum Efficiency versus Wavelength and Surface roughness: Ra and Rpp represent the Average Roughness and Peak to Peak Roughness parameters, respectively.

  20. Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

    Science.gov (United States)

    Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2017-08-01

    Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

  1. Josephson plasma resonance in superconducting multilayers

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sakai, S

    1998-01-01

    We derive an analytical solution for the Josephson plasma resonance of superconducting multilayers. This analytical solution is derived mainly for low-T-c systems with magnetic coupling between the superconducting layers. but many features of our results are more general, and thus an application...

  2. Josephson plasma resonance in superconducting multilayers

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1999-01-01

    We derive an analytical solution for the josephson plasma resonance of superconducting multilayers. This analytical solution is derived mainly for low T-c systems with magnetic coupling between the superconducting layers, but many features of our results are more general, and thus an application...

  3. Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    孙长征; 周进波; 熊兵; 王健; 罗毅

    2003-01-01

    We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.

  4. Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

    Science.gov (United States)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2016-05-01

    We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

  5. Magnetosonic resonances in the magnetospheric plasma

    Science.gov (United States)

    Leonovich, A. S.; Kozlov, D. A.

    2013-05-01

    A problem of coupling between fast and slow magnetosonic waves in Earth's magnetosphere (magnetosonic resonance) is examined. Propagation both slow magnetosonic wave and Alfven wave can easily be canalized along the magnetic field line direction. The main difference between the two is that slow magnetosonic waves dissipate strongly due to their interaction with the background plasma ions, whose temperature is above the electron temperature. In Earth's magnetosphere, however, there is a region where the dissipation of slow magnetosonic waves can be weak—the inner plasmasphere. The slow magnetosonic waves generated there can be registered directly. In other regions, with strong dissipation of slow magnetosonic waves, their signature may be detected through their impact on the Alfven resonance at frequencies for which the resonant Alfven and slow magnetosonic waves exist simultaneously in the magnetosphere. Owing to their strong coupling with the background plasma ions, resonant slow magnetosonic waves can transfer the energy and impulse from the solar wind to the magnetospheric plasma ions via fast magnetosonic waves penetrating into the tail lobes. A problem of resonant conversion of fast magnetosonic waves into slow magnetosonic oscillations in a magnetosphere with dipole-like magnetic field is also examined.

  6. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    Science.gov (United States)

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  7. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    Directory of Open Access Journals (Sweden)

    Jie Yang

    Full Text Available A Similarity Ratio Analysis (SRA method is proposed for early-stage Fault Detection (FD in plasma etching processes using real-time Optical Emission Spectrometer (OES data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A, takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  8. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding.

    Science.gov (United States)

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-06-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch's t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality.

  9. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding

    Science.gov (United States)

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-01-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch’s t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality. PMID:26273561

  10. Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

    Science.gov (United States)

    Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko

    2017-02-01

    We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact.

  11. Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Adzhri, R., E-mail: adzhri@gmail.com; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my; Hashim, U.; Ayub, R. M. [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia); School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)

    2016-07-06

    In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  12. Plasma etching and ashing: a technique for demonstrating internal structures of helminths using scanning electron microscopy.

    Science.gov (United States)

    Veltkamp, C J; Chubb, J C

    2006-03-01

    Plasma etching and ashing for demonstrating the three-dimensional ultrastructure of the internal organs of helminths is described. Adult worms of the cestode Caryophyllaeides fennica were dehydrated through an ethanol series, critical point dried (Polaron E3000) and sputter coated with 60% gold-palladium (Polaron E5100) and glued to a standard scanning electron microscope (SEM) stub positioned as required for ashing. After initial SEM viewing of worm surfaces for orientation, stubs were placed individually in the reactor chamber of a PT7150 plasma etching and ashing machine. Worms were exposed to a radio frequency (RF) potential in a low pressure (0.2 mbar) oxygen atmosphere at room temperature. The oxidation process was controlled by varying the times of exposure to the RF potential between 2 to 30 min, depending on the depth of surface tissue to be removed to expose target organs or tissues. After each exposure the oxidized layer was blown from the surface with compressed air, the specimen sputter-coated, and viewed by SEM. The procedure was repeated as necessary, to progressively expose successive layers. Fine details of organs, cells within, and cell contents were revealed. Ashing has the advantage of providing three dimensional images of the arrangement of organs that are impossible to visualize by any other procedure, for example facilitating testes counts in cestodes. Both freshly-fixed and long-term stored helminths can be ashed. Ashing times to obtain the desired results were determined by trial so that some duplicate material was needed.

  13. Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching

    Science.gov (United States)

    Sha, Yunfei; Xiao, Shaoqing; Zhang, Xiumei; Qin, Fang; Gu, Xiaofeng

    2017-07-01

    Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe2 can be changed from the indirect band gap to the direct band gap when MoSe2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe2 nanaosheets down to monolayer by using SF6 + N2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO2 substrate and the remaining MoSe2 layers. By adjusting the etching rates we can achieve complete MoSe2 removal and any disired number of MoSe2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

  14. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Science.gov (United States)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  15. Effect of plasma etching on photoluminescence of SnO(x)/Sn nanoparticles deposited on DOPC lipid membrane.

    Science.gov (United States)

    An, Hyeun Hwan; Lee, Seung Jae; Baek, Seung Ha; Han, Won Bae; Kim, Young Ho; Yoon, Chong Seung; Suh, Sang Hee

    2012-02-15

    The photoluminescence characteristic of the SnO(x)/Sn nanoparticles deposited on a solid supported liquid-crystalline phospholipid (1,2-dioleoyl-sn-glycero-3-phosphocholine) membrane was probed after plasma etching the nanoparticle monolayer. It was shown that the plasma etching of the nanoparticle surface greatly altered the particle morphology and enhanced the PL effect, especially when the particle size was below 10 nm in spite of strong presence of surrounding carbon. The enhancement mainly stemmed from the growth of a new PL peak due to the additional defect states produced on the nanoparticle surface by the plasma etching. It was also shown that hydrating the SnO(x)/Sn nanoparticles similarly improved the PL response of the nanoparticles as the hydration produced an additional oxygen-rich oxide layer on the particle surface. Copyright © 2011 Elsevier Inc. All rights reserved.

  16. Photolithography and Selective Etching of an Array of Quartz Tuning Fork Resonators with Improved Impact Resistance Characteristics

    Science.gov (United States)

    Lee, Sungkyu

    2001-08-01

    Quartz tuning fork blanks with improved impact-resistant characteristics for use in Qualcomm mobile station modem (MSM)-3000 central processing unit (CPU) chips for code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) systems were designed using finite element method (FEM) analysis and suitable processing conditions were determined for the reproducible precision etching of a Z-cut quartz wafer into an array of tuning forks. Negative photoresist photolithography for the additive process was used in preference to positive photoresist photolithography for the subtractive process to etch the array of quartz tuning forks. The tuning fork pattern was transferred via a conventional photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. A tightly adhering and pinhole-free 600/2000 Å chromium/gold mask was coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the back surface of the wafer. With the protective metallization area of the tuning fork geometry thus formed, etching through the quartz wafer was performed at 80°C in a ± 1.5°C controlled bath containing a concentrated solution of ammonium bifluoride to remove the unwanted areas of the quartz wafer. The quality of the quartz wafer surface finish after quartz etching depended primarily on the surface finish of the quartz wafer prior to etching and the quality of quartz crystals used. Selective etching of a 100 μm quartz wafer could be achieved within 90 min at 80°C. A selective etching procedure with reproducible precision has thus been established and enables the photolithographic mass production of miniature tuning fork resonators.

  17. Development of Polysulfone Hollow Fiber Porous Supports for High Flux Composite Membranes: Air Plasma and Piranha Etching

    OpenAIRE

    Ilya Borisov; Anna Ovcharova; Danila Bakhtin; Stepan Bazhenov; Alexey Volkov; Rustem Ibragimov; Rustem Gallyamov; Galina Bondarenko; Rais Mozhchil; Alexandr Bildyukevich; Vladimir Volkov

    2017-01-01

    For the development of high efficiency porous supports for composite membrane preparation, polysulfone (PSf) hollow fiber membranes (outer diameter 1.57 mm, inner diameter 1.12 mm) were modified by air plasma using the low temperature plasma treatment pilot plant which is easily scalable to industrial level and the Piranha etch (H2O2 + H2SO4). Chemical and plasma modification affected only surface layers and did not cause PSf chemical structure change. The modifications led to surface roughne...

  18. Microwave Absorption in Electron Cyclotron Resonance Plasma

    Institute of Scientific and Technical Information of China (English)

    LIU Ming-Hai; HU Xi-Wei; WU Qin-Chong; YU Guo-Yang

    2000-01-01

    The microwave power absorption in electron cyclotron resonance plasma reactor was investigated with a twodimensional hybrid-code. Simulation results indicated that there are two typical power deposition profiles over the entire parameter region: (1) microwave power deposition peaks on the axis and decreases in radial direction,(2) microwave power deposition has its maximum at some radial position, i.e., a hollow distribution. The spatial distribution of electron temperature resembles always to the microwave power absorption profile. The dependence of plasma parameter on the gas pressure is discussed also.

  19. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching.

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-09

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  20. Modification of Plasma Solitons by Resonant Particles

    DEFF Research Database (Denmark)

    Karpman, Vladimir; Lynov, Jens-Peter; Michelsen, Poul;

    1980-01-01

    A consistent theory of plasma soliton interaction with resonant particles is developed. A simple derivation of a perturbed Korteweg–de Vries equation with the interaction term is presented. It is shown how the known limit cases (such as Ott–Sudan’s, etc.) can be derived from the general equations...... Korteweg–de Vries equation. Laboratory measurements carried out in a strongly magnetized, plasma‐filled waveguide and results from particle simulation are interpreted in terms of the analytical results....

  1. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    Science.gov (United States)

    2014-01-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

  2. Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage

    Science.gov (United States)

    Eriguchi, Koji

    2017-08-01

    The increasing demand for the higher performance of ultra-large-scale integration (ULSI) circuits requires the aggressive shrinkage of device feature sizes in accordance with the scaling law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). This article comprehensively addresses the negative aspects of plasma processing, i.e. plasma process-induced damage, in particular, the defect creation induced by ion bombardment in Si substrates during plasma etching. The ion bombardment damage forms a surface modified region and creates localized defect structures. Modeling and characterization techniques of the ion bombardment damage in Si substrates are overviewed. The thickness of the modified region, i.e. the damaged layer, is modeled by a modified range theory and the density of defects is characterized by photoreflectance spectroscopy (PRS) and the capacitance-voltage technique. The effects of plasma-induced damage (PID) on MOSFET performance are presented. In addition, some of the emerging topics—the enhanced parameter variability in ULSI circuits and recovery of the damage—are discussed as future perspectives.

  3. Surface modification by plasma etching impairs early vascularization and tissue incorporation of porous polyethylene (Medpor(®) ) implants.

    Science.gov (United States)

    Laschke, Matthias W; Augustin, Victor A; Sahin, Fadime; Anschütz, Dieter; Metzger, Wolfgang; Scheuer, Claudia; Bischoff, Markus; Aktas, Cenk; Menger, Michael D

    2016-11-01

    Porous polyethylene (Medpor®) is commonly used in craniofacial reconstructive surgery. Rapid vascularization and tissue incorporation are crucial for the prevention of migration, extrusion, and infection of the biomaterial. Therefore, we analyzed whether surface modification by plasma etching may improve the early tissue response to Medpor®. Medpor® samples were treated in a plasma chamber at low (20 W; LE-PE) and high energy levels (40 W; HE-PE). The samples and non-treated controls were implanted into mouse dorsal skinfold chambers to analyze angiogenesis, inflammation, and granulation tissue formation over 14 days using intravital fluorescence microscopy, histology, and immunohistochemistry. Scanning electron microscopy (SEM) analyses revealed that elevating energy levels of plasma etching progressively increase the oxygen surface content and surface roughness of Medpor®. This did not affect the leukocytic response to the implants. However, LE-PE and HE-PE samples exhibited an impaired vascularization. This was associated with a reduced formation of a collagen-rich granulation tissue at the implantation site. Additional in vitro experiments showed a reduced cell attachment on plasma-etched Medpor®. Thus, plasma etching may not be recommended to improve the clinical outcome of reconstructive interventions using Medpor®. However, it may be beneficial for temporarily implanted polyethylene-based biomedical devices for which tissue incorporation is undesirable. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1738-1748, 2016. © 2015 Wiley Periodicals, Inc.

  4. No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model

    DEFF Research Database (Denmark)

    Saksø, Henrik; Jakobsen, Thomas Vestergaard; Mortensen, Mikkel Saksø

    2013-01-01

    Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants.......Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants....

  5. Effect of plasma etching on destructive adsorption properties of polypropylene fibers containing magnesium oxide nanoparticles.

    Science.gov (United States)

    Lange, Laura E; Obendorf, S Kay

    2012-02-01

    Dermal absorption of pesticides poses a danger for agricultural workers. Use of personal protection equipment (PPE) is required to provide protection; some of the current PPE involves impermeable barriers. In these barrier materials, the same mechanism that prevents the penetration of toxic chemicals also blocks the passage of water vapor and air from flowing through the material, making the garments uncomfortable. Fibers that degrade organophosphate pesticides, such as methyl parathion, were developed by incorporating metal oxides. These modified fibers can be incorporated into conventional fabric structures that allow water vapor to pass through, thereby maintaining comfort. Fibers with self-decontamination functionality were developed by incorporating magnesium oxide (MgO) nanoparticles into a polypropylene (PP) melt-extruded fiber. These fibers were then treated with plasma etching to expose increased surface area of the MgO nanoparticles. Three steps were involved in this research project: (1) determining the reactivity of MgO and methyl parathion, (2) making melt-spun MgO/PP fibers, and (3) testing the reactivity of MgO/PP composite fibers and methyl parathion. It was confirmed that MgO stoichiometrically degrades methyl parathion by way of destructive adsorption. The etching of the PP fibers containing MgO nanoparticles increased the chemical accessibility of MgO reactive sites, therefore making them more effective in degrading methyl parathion. These fibers can enhance the protection provided by PPE to agricultural and horticultural workers and military personnel.

  6. Fabrication of novel III-N and III-V modulator structures by ECR plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

    1995-12-01

    Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar or CH{sub 4}/H{sub 2}/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H{sub 2}O and HCl/HNO{sub 3}/H{sub 2} O are employed for AlGaAs and InGaP, respectively, a new KOH based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiN{sub x}, while the high surface recombination velocity of exposed AlGaAs ({approximately} 10{sup 5} cm{center_dot}sec {sup {minus}1}) requires encapsulation with ECR-CVD SiN{sup x} to stabilize the optical properties of the modulators.

  7. Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.

    Science.gov (United States)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2015-10-05

    We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method.

  8. Long-term Adhesion Study of Self-etching Systems to Plasma-treated Dentin.

    Science.gov (United States)

    Hirata, Ronaldo; Teixeira, Hellen; Ayres, Ana Paula Almeida; Machado, Lucas S; Coelho, Paulo G; Thompson, Van P; Giannini, Marcelo

    2015-06-01

    To determine the influence of atmospheric pressure plasma (APP) treatment on the microtensile dentin bond strength of two self-etching adhesive systems after one year of water storage as well as observe the contact angle changes of dentin treated with plasma and the micromorphology of resin/dentin interfaces using SEM. For contact angle measurements, 6 human molars were sectioned to remove the occlusal enamel surface, embedded in PMMA resin, and ground to expose a flat dentin surface. Teeth were divided into two groups: 1) argon APP treatment for 30 s, and 2) blown air (control). For the microtensile test, 28 human third molars were used and prepared similarly to contact angle measurements. Teeth were randomly divided into 4 groups (n = 7) according to two self-etching adhesives and APP treatment (with/without). After making the composite resin buildup, teeth were sectioned perpendicular to the bonded interface to obtain beam specimens. The specimens were tested after 24 h and one year of water storage until failure. Bond strength data were analyzed by three-way ANOVA and Tukey's post-hoc test (α = 0.05%). Three beam specimens per group that were not used in the bond strength test were prepared for interfacial SEM analysis. APP application decreased the contact angle, but increased the bond strength only for one adhesive tested. SEM evaluation found signs of degradation within interfacial structures following 1-year aging in water. APP increased the dentin surface energy, but the effects of APP and 1-year water storage on dentin bond strength were product dependent. APP increased the dentin surface energy. It also increased the bond strength for Scotchbond Universal, but storage for one year negated the positive effect of APP treatment.

  9. Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application

    Science.gov (United States)

    Ulliac, G.; Calero, V.; Ndao, A.; Baida, F. I.; Bernal, M.-P.

    2016-03-01

    Lithium Niobate (LN) exhibits unique physical properties such as remarkable electro-optical coefficients and it is thus an excellent material for a wide range of fields like optic communications, lasers, nonlinear optical applications, electric field optical sensors etc. In order to further enhance the optical device performance and to be competitive with silicon photonics, sub-micrometric thickness lithium niobate films are crucial. A big step has been achieved with the development of LN thin films by using smart cut technology and wafer bonding and these films are nowadays available in the market. However, it is a challenge to obtain the requirements of the high quality thin LN film waveguide. In this letter, we show smooth ridge waveguides fabricated on 700 nm thickness thin film lithium niobate (TFLN). The fabrication has been done by developing and optimizing three steps of the technological process, the mask fabrication, the plasma etching, and a final cleaning wet etching step in order to remove the lithium niobate redeposition on the side walls. We have obtained single mode propagation with light overall losses of only 5 dB/cm.

  10. Ambient low temperature plasma etching of polymer films for secondary ion mass spectrometry molecular depth profiling.

    Science.gov (United States)

    Muramoto, Shin; Staymates, Matthew E; Brewer, Tim M; Gillen, Greg

    2012-12-18

    The feasibility of a low temperature plasma (LTP) probe as a way to prepare polymer bevel cross sections for secondary ion mass spectrometry (SIMS) applications was investigated. Poly(lactic acid) and poly(methyl methacrylate) films were etched using He LTP, and the resulting crater walls were depth profiled using time-of-flight secondary ion mass spectrometry (ToF-SIMS) to examine changes in chemistry over the depth of the film. ToF-SIMS results showed that while exposure to even 1 s of plasma resulted in integration of atmospheric nitrogen and contaminants to the newly exposed surface, the actual chemical modification to the polymer backbone was found to be chemistry-dependent. For PLA, sample modification was confined to the top 15 nm of the PLA surface regardless of plasma exposure dose, while measurable change was not seen for PMMA. The confinement of chemical modification to 15 nm or less of the top surface suggests that LTP can be used as a simple method to prepare cross sections or bevels of polymer thin films for subsequent analysis by surface-sensitive molecular depth profiling techniques such as SIMS, X-ray photoelectron spectroscopy (XPS), and other spatially resolved mass spectrometric techniques.

  11. Nonhomogeneous surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air

    Science.gov (United States)

    Wang, Tao; Yang, Bin; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng; Liu, Jingquan

    2016-10-01

    Surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air were investigated. The morphologies and chemical compositions of the etched surface were analyzed by optical microscopy, SEM, EDS, XPS and ATR-FTIR. The microscopy and SEM images showed the etched surface was nonhomogeneous with six discernable ring patterns from the center to the outside domain, which were composed of (I) a central region; (II) an effective etching region, where almost all of the parylene-C film was removed by the plasma jet with only a little residual parylene-C being functionalized with carboxyl groups (Cdbnd O, Osbnd Cdbnd O-); (III) an inner etching boundary; (IV) a middle etching region, where the film surface was smooth and partially removed; (V) an outer etching boundary, where the surface was decorated with clusters of debris, and (VI) a pristine parylene-C film region. The analysis of the different morphologies and chemical compositions illustrated the different localized etching process in the distinct regions. Besides, the influence of O2 flow rate on the surface properties of the etched parylene-C film was also investigated. Higher volume of O2 tended to weaken the nonhomogeneous characteristics of the etched surface and improve the etched surface quality.

  12. Active plasma resonance spectroscopy: A functional analytic description

    OpenAIRE

    Lapke, Martin; Oberrath, Jens; Mussenbrock, Thomas; Brinkmann, Ralf Peter

    2012-01-01

    The term "Active Plasma Resonance Spectroscopy" refers to a class of diagnostic methods which employ the ability of plasmas to resonate on or near the plasma frequency. The basic idea dates back to the early days of discharge physics: An signal in the GHz range is coupled to the plasma via an electrical probe; the spectral response is recorded, and then evaluated with a mathematical model to obtain information on the electron density and other plasma parameters. In recent years, the concept h...

  13. Plasma production for electron acceleration by resonant plasma wave

    Science.gov (United States)

    Anania, M. P.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Croia, M.; Curcio, A.; Di Giovenale, D.; Di Pirro, G. P.; Filippi, F.; Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R.; Romeo, S.; Ferrario, M.

    2016-09-01

    Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10-100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10-100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC_LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

  14. Plasma production for electron acceleration by resonant plasma wave

    Energy Technology Data Exchange (ETDEWEB)

    Anania, M.P., E-mail: maria.pia.anania@lnf.infn.it [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Biagioni, A.; Chiadroni, E. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Cianchi, A. [University of Rome Tor Vergata - INFN, via della Ricerca Scientifica, 1, 00133 Roma (Italy); INFN, Via della Ricerca Scientifica, 1, 00133 Roma (Italy); Croia, M.; Curcio, A. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Di Giovenale, D.; Di Pirro, G.P. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Filippi, F. [University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Romeo, S. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Ferrario, M. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy)

    2016-09-01

    Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10–100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10–100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC-LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

  15. Development of SMD 32.768 kHz tuning fork-type crystals using photolithography and selective etching process. Pt. I. Selective etching of an array of quartz tuning fork resonators

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S. [Samsung Electro-Mechanics Co., Ltd., Suwon City (Korea); Kang, K.M. [National Univ. of Technology, Seoul (Korea). Dept. of Materials Engineering

    2001-05-01

    Negative photoresist photolithography was found superior to previously used positive photoresist photolithography to etch array of quartz tuning forks for use in Qualcomm trademark mobile station modem (MSM), 3000{sup TM} central processing unit (CPU), chips of code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) units. Optimum processing condition was devised for reproducible precision etching of Z-cut quartz wafer into array of tuning forks. Tuning fork pattern was transferred via ordinary photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. A tightly adhering and pinhole-free 600/2000 A chromium/gold mask is coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the backside of the wafer. With protective metallization area of tuning fork geometry thus formed, etching through quartz wafer was done at 80 C in a {+-} 1.5 C controlled bath containing concentrated solution of ammonium bifluoride to remove unwanted area of the quartz wafer. The quality of quartz wafer surface finish after quartz etching depended primarily on the surface finish of quartz wafer prior to etching and the quality of quartz crystals used. At 80 C, selective etching of 100 {mu}m quartz wafer could be effected within 90 min. Reproducible precision selective etching method has thus been established and enables mass production of miniature tuning fork resonators with electrode patterns on them photolithographically. (orig.)

  16. Etching of UO2 in NF3 RF Plasma Glow Discharge

    Energy Technology Data Exchange (ETDEWEB)

    Veilleux, John M. [Univ. of California, Berkeley, CA (United States)

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO2 were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO2 from stainless steel substrates. Experiments were conducted using NF3 gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO2 samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO2 in the samples had a relatively low density of 4.8 gm/cm3. Counting of the depleted UO2 on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, 234Th and 234Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about ± 2%. Results demonstrated that UO2 can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO2 in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 μm/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO2 etching was also noted below 50 W in which etching increased up to a maximum pressure, ~23 Pa, then decreased with further increases in pressure.

  17. A new reactive atom plasma technology (RAPT) for precision machining: the etching of ULE optical surfaces

    Science.gov (United States)

    Fanara, Carlo; Shore, Paul; Nicholls, John R.; Lyford, Nicholas; Sommer, Phil; Fiske, Peter

    2006-06-01

    The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.

  18. Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6

    DEFF Research Database (Denmark)

    Draghici, Mihai; Stamate, Eugen

    2010-01-01

    Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF6 gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio...... of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive...... and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions....

  19. Roughening of Polyimide Surface for Inkjet Printing by Plasma Etching Using the Polyimide Masked with Polystyrene Nanosphere Array.

    Science.gov (United States)

    Mun, Mu Kyeom; Park, Jin Woo; Ahn, Jin Ho; Kim, Ki Kang; Yeom, Geun Young

    2015-10-01

    Two key conditions are required for the application of fine-line inkjet printing onto a flexible substrate such as polyimide (PI): linewidth control during the inkjetting process, and a strong adhesion of the polyimide surface to the ink after the ink solidifies. In this study, the properties of a polyimide surface that was roughened through etching in a He/SF6 plasma, using a polystyrene nanosphere array as the etch mask, were investigated. The near-atmospheric-pressure plasma system of the He/SF6 plasma that was used exhibits two notable properties in this context: similar to an atmospheric-pressure plasma system, it can easily handle inline substrate processing; and, similar to a vacuum system, it can control the process gas environment. Through the use of plasma etching, the polyimide surface masked the 120-nm-diameter polystyrene nanospheres, thereby forming a roughened nanoscale polyimide surface. This surface exhibited not only a greater hydrophobicity--with a contact angle of about 150° for water and about 30° for silver ink, indicating better silver linewidth control during the silver inkjetting process--but also a stronger adhesion to the silver ink sprayed onto it when compared with the flat polyimide surface.

  20. Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach

    Science.gov (United States)

    Ohba, Tomihito; Yang, Wenbing; Tan, Samantha; Kanarik, Keren J.; Nojiri, Kazuo

    2017-06-01

    The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Cl2 plasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roughness R RMS was 0.6 nm, which was improved from an initial roughness of 0.8 nm. For AlGaN ALE, BCl3 was added to the chlorine step to obtain a smooth surface with R RMS of 0.3 nm and stoichiometry similar to the initial sample. The ultra smooth surface obtained by etching is promising for use in next-generation power devices.

  1. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

    Science.gov (United States)

    Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

    2017-06-20

    This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF6 with additive O2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl3 + N2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl2 + O2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl2 and 3.6 sccm O2. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

  2. A new method of dry cleaning after plasma etching of MRAM materials

    Science.gov (United States)

    Kubo, Takuya; Kang, Song-Yun; Tokyo Electron Ltd. Team

    2015-09-01

    This paper describes a new method for dry cleaning after etching of MRAM materials. Problems such as repeatability or particle generation after etching of MRAM materials are due to the non-volatile nature of etch products. A new etch concept for MRAM is to etch each material such as carbon, metal, or silicon compounds step by step. There are 4 steps in this cleaning: 1) carbon removal by N2/H2, 2) metal removal by Ar, 3) silicon removal by CF4/O2, 4) carbon, oxygen, and fluorine removal by N2/H2. Etch repeatability and particle level reduction have been demonstrated to result from this cleaning method. Akasaka Biz Tower, 5-3-1 Akasaka Minato-ku, Tokyo 107-6325, Japan.

  3. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  4. Many flaked particles generated by electric field stress working as an impulsive force in mass-production plasma etching equipment

    Science.gov (United States)

    Kasashima, Yuji; Uesugi, Fumihiko

    2015-09-01

    Particles generated in plasma etching significantly lower production yield. In plasma etching, etching reaction products adhere to the inner chamber walls, gradually forming films, and particles are generated by flaking of the deposited films due to electric field stress that acts boundary between the inner wall and the film. In this study, we have investigated the mechanism of instantaneous generation of many flaked particles using the mass-production reactive ion etching equipment. Particles, which flake off from the films on the ground electrode, are detected by the in-situ particle monitoring system using a sheet-shaped laser beam. The results indicate that the deposited films are severely damaged and flake off as numerous particles when the floating potential at the inner wall suddenly changes. This is because the rapid change in floating potential, observed when unusual wafer movement and micro-arc discharge occur, causes electric field stress working as an impulsive force. The films are easily detached by the impulsive force and many flaked particles are instantaneously generated. This mechanism can occur on not only a ground electrode but a chamber walls, and cause serious contamination in mass-production line. This work was partially supported by JSPS KAKENHI Grant Number B 26870903.

  5. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    Energy Technology Data Exchange (ETDEWEB)

    Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro [Device and Material Research Group, RDS Platform, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan)

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  6. Feasibility study of monitoring of plasma etching chamber conditions using superimposed high-frequency signals on rf power transmission line.

    Science.gov (United States)

    Kasashima, Y; Uesugi, F

    2015-10-01

    An in situ monitoring system that can detect changes in the conditions of a plasma etching chamber has been developed. In the system, low-intensity high-frequency signals are superimposed on the rf power transmission line used for generating plasma. The system measures reflected high-frequency signals and detects the change in their frequency characteristics. The results indicate that the system detects the changes in the conditions in etching chambers caused by the changes in the electrode gap and the inner wall condition and demonstrate the effectiveness of the system. The system can easily be retrofitted to mass-production equipment and it can be used with or without plasma discharge. Therefore, our system is suitable for in situ monitoring of mass-production plasma etching chambers. The system is expected to contribute to development of predictive maintenance, which monitors films deposited on the inner wall of the chamber and prevents equipment faults caused by misalignment of chamber parts in mass-production equipment.

  7. Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application.

    Science.gov (United States)

    Lee, J H; Yoon, Y S; Kim, M J

    2013-04-01

    The floating harmonic method was developed for in situ plasma diagnostics of allowing real time measurement of electron temperature (Te) and ion flux (Jion) without contamination of the probe from surface modification by reactive species. In this study, this novel non-invasive diagnostic system was studied to characterize inductively coupled plasma of reactive gases monitoring Te and Jion for investigating the optimum plasma etching conditions and controlling of the real-time plasma surface reaction in the range of 200-900 W source power, 10-100 W bias power, and 3-15 mTorr chamber pressure, respectively.

  8. Electrochemical characteristics of plasma-etched black silicon as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gibaek; Wehrspohn, Ralf B., E-mail: ralf.b.wehrspohn@iwmh.fraunhofer.de [Fraunhofer Institute for Mechanics of Materials IWM, Halle (Saale) 06120, Germany and Department of Physics, Martin-Luther University, Halle (Saale) 06099 (Germany); Schweizer, Stefan L. [Department of Physics, Martin-Luther University, Halle (Saale) 06099 (Germany)

    2014-11-01

    Nanostructured silicon as an anode material for Li-ion batteries is produced for the first time by inductively coupled plasma–plasma etching of Si wafers in the black silicon regime. The microscopic structure strongly resembles other types of nanostructured silicon, with a well-arranged nanostructure possessing a sufficient porosity for accommodating large volume expansion. Despite these features, however, a high first-cycle irreversible capacity loss and a poor cycle life are observed. The main reason for these poor features is the formation of a thick solid-electrolyte interphase (SEI) layer related to the surface condition of the pristine nanostructured black silicon (b-Si) electrode. Therefore, the cycle life of the b-Si electrode is heavily influenced by the constant reformation of the SEI layer depending upon the surface composition in spite of the presence of nanostructured Si. In the fast lithiation experiments, the nanostructure region of the b-Si electrode is detached from the Si substrate owing to the kinetics difference between the lithium ion diffusion and the electron injection and phase transformation in the nanostructured Si region. This means that more Si substrate is involved in lithiation at high current rates. It is therefore important to maintain balance in the chemical kinetics during the lithiation of nanostructured Si electrodes with a Si substrate.

  9. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon

    Science.gov (United States)

    Tinck, Stefan; Bogaerts, Annemie

    2016-06-01

    In this work, the role of vibrationally excited HBr (HBr(vib)) is computationally investigated for a HBr/He inductively coupled plasma applied for Si etching. It is found that at least 50% of all dissociations of HBr occur through HBr(vib). This additional dissociation pathway through HBr(vib) makes the plasma significantly more atomic. It also results in a slightly higher electron temperature (i.e. about 0.2 eV higher compared to simulation results where HBr(vib) is not included), as well as a higher gas temperature (i.e. about 50 K higher than without including HBr(vib)), due to the enhanced Franck-Condon heating through HBr(vib) dissociation, at the conditions investigated. Most importantly, the calculated etch rate with HBr(vib) included in the model is a factor 3 higher than in the case without HBr(vib), due to the higher fluxes of etching species (i.e. H and Br), while the chemical composition of the wafer surface shows no significant difference. Our calculations clearly show the importance of including HBr(vib) for accurate modeling of HBr-containing plasmas.

  10. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    Science.gov (United States)

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio.

  11. Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

    Science.gov (United States)

    Choi, Yong-Hee; Jang, Ho-Kyun; Jin, Jun-Eon; Joo, Min-Kyu; Piao, Mingxing; Shin, Jong Mok; Kim, Jae-Sung; Na, Junhong; Kim, Gyu Tae

    2014-04-01

    We report the etching characteristics of a stacked hafnium-indium-zinc oxide (HIZO) with a photoresist using the gas mixture of chlorine and argon (Cl2/Ar). The etching behaviors of HIZO have been investigated in terms of a source power, a bias power and a chamber pressure. As the concentration of Cl2 was increased compared to pure Ar, the etch rate of HIZO film was found slightly different from that of indium-zinc oxide (IZO) film. Moreover, to investigate the etching mechanism systematically, various inspections were carried out such as atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) depending on the portion of Cl2. Additionally, we compared the etching mechanism of HIZO film with IZO film to confirm the difference of chemical bonds caused by the influence of hafnium doping.

  12. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

    Science.gov (United States)

    Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

    2016-05-01

    In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

  13. Optimization of dry etching parameters for fabrication of polysilicon waveguides with smooth sidewall using a capacitively coupled plasma reactor.

    Science.gov (United States)

    Cheemalapati, Surya; Ladanov, Mikhail; Winskas, John; Pyayt, Anna

    2014-09-01

    In this paper, we demonstrate the optimization of a capacitively coupled plasma etching for the fabrication of a polysilicon waveguide with smooth sidewalls and low optical loss. A detailed experimental study on the influences of RF plasma power and chamber pressure on the roughness of the sidewalls of waveguides was conducted and waveguides were characterized using a scanning electron microscope. It was demonstrated that optimal combination of pressure (30 mTorr) and power (150 W) resulted in the smoothest sidewalls. The optical losses of the optimized waveguide were 4.1±0.6  dB/cm.

  14. PTFE surface etching in the post-discharge of a RF scanning plasma torch: evidence of ejected fluorinated species

    CERN Document Server

    Dufour, Thierry; Viville, Pascal; Duluard, Corinne Y; Desbief, Simon; Lazzaroni, Roberto; Reniers, François

    2016-01-01

    The texturization of poly(tetrafluoroethylene) (PTFE) surfaces is achieved at atmospheric pressure by using the post-discharge of a radio-frequency plasma torch supplied in helium and oxygen gases. The surface properties are characterized by contact angle measurement, X-ray photoelectron spectroscopy and atomic force microscopy. We show that the plasma treatment increases the surface hydrophobicity (with water contact angles increasing from 115 to 155{\\deg}) only by modifying the PTFE surface morphology and not the stoichiometry. Measurements of sample mass losses correlated to the ejection of CF$_2$ fragments from the PTFE surface evidenced an etching mechanism at atmospheric pressure.

  15. Pulse-biased etching of Si3N4-layer in capacitively-coupled plasmas for nano-scale patterning of multi-level resist structures.

    Science.gov (United States)

    Lee, Hyelim; Kim, Sechan; Choi, Gyuhyun; Lee, Nae-Eung

    2014-12-01

    Pulse-biased plasma etching of various dielectric layers is investigated for patterning nano-scale, multi-level resist (MLR) structures composed of multiple layers via dual-frequency, capacitively-coupled plasmas (CCPs). We compare the effects of pulse and continuous-wave (CW) biasing on the etch characteristics of a Si3N4 layer in CF4/CH2F2/O2/Aretch chemistries using a dual-frequency, superimposed CCP system. Pulse-biasing conditions using a low-frequency power source of 2 MHz were varied by controlling duty ratio, period time, power, and the gas flow ratio in the plasmas generated by the 27.12 MHz high-frequency power source. Application of pulse-biased plasma etching significantly affected the surface chemistry of the etched Si3N4 surfaces, and thus modified the etching characteristics of the Si3N4 layer. Pulse-biased etching was successfully applied to patterning of the nano-scale line and space pattern of Si3N4 in the MLR structure of KrF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer/Si3N4. Pulse-biased etching is useful for tuning the patterning of nano-scale dielectric hard-mask layers in MLR structures.

  16. Atomic layer sensitive in-situ plasma etch depth control with reflectance anisotropy spectroscopy (RAS)

    Science.gov (United States)

    Doering, Christoph; Kleinschmidt, Ann-Kathrin; Barzen, Lars; Strassner, Johannes; Fouckhardt, Henning

    2017-06-01

    Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light under nearly normal incidence. Commonly the spectral range is between 1.5 and 5.5 eV. Typically the spectrally resolved difference in reflectivity for light of two orthogonal linear polarizations of light is measured with respect to time - for example for cubic lattices (like the zinc blende structures of most III-V semiconductors) polarizations along the [110] and the [-110] direction. Local anisotropies on the etch front cause elliptical polarization of the reflected light resulting in the RAS signal. The time and photon energy resolved spectra of RAS include reflectometric as well as interferometric information. Light with wavelengths well above 100 nm (even inside the material) can be successfully used to monitor surface abrasion with a resolution of some tens of nanometers. The layers being thinned out act as optical interferometers resulting in Fabry-Perot oscillations of the RAS-signal. Here we report on RAS measurements assessing the surface deconstruction during dry etching. For low etch rates our experimental data show even better resolution than that of the (slow) Fabry-Perot oscillations. For certain photon energies we detect monolayer-etch-related oscillations in the mean reflectivity, which give the best possible resolution in etch depth monitoring and control, i.e. the atomic scale.

  17. Computer modelling of cryogenic etching in SF6 /O2 /SiF4 and CxFy inductively coupled plasmas

    Science.gov (United States)

    Zhang, Quan-Zhi; Bogaerts, Annemie

    2016-09-01

    Plasma etching plays a more and more important role in microchip fabrication, due to its anisotropy during surface processing. However, current state-of-the-art plasma processing faces significant challenges when going beyond 14 nm features, such as plasma induced damage. A novel process with limited plasma damage is cryogenic etching of low-k material with SF6 /O2 /SiF4 and CxFy plasmas. In this work, a hybrid Monte Carlo-fluid model is employed to describe the plasma behavior, including the species and temperature distributions and power deposition, for SF6 /O2 /SiF4 and CxFy gas mixtures, applied for cryogenic etching under various gas ratios and operating conditions, which can help to establish an optimal process window. Quan-Zhi Zhang gratefully acknowledges the Marie Sklodowska-Curie Action Individual Fellowships (MSCA-IF-2015-EF).

  18. Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching.

    Science.gov (United States)

    Sivaraman, Sankar K; Santhanam, Venugopal

    2012-06-29

    Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 × 10(5)) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface.

  19. Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching

    Science.gov (United States)

    Sivaraman, Sankar K.; Santhanam, Venugopal

    2012-06-01

    Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 × 105) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface.

  20. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    Energy Technology Data Exchange (ETDEWEB)

    Gul, Banat, E-mail: banatgul@gmail.com [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan); Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Aman-ur-Rehman, E-mail: amansadiq@gmail.com [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan)

    2015-10-15

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  1. Electrical characterization of buckled graphene films derived from plasma etched silicon carbide

    Science.gov (United States)

    Denig, Tobias

    Graphene is a 2D allotrope of carbon with exceptional electronic properties and numerous applications. Research in the Surface and Materials Studies Laboratory at West Virginia University has led to the development of a low temperature, halogen based plasma etching process that produces buckled graphene films on 6H-SiC. Films ranging from one to five layers in thickness have been produced. This growth process is scalable with the SiC wafer diameter, and in principle, it resolves many of the difficult issues associated with the manufacturability of large area epitaxial graphene films. The growth process and functionalization of these buckled graphene films have been studied by other in this laboratory. The research described in this dissertation represents the first measurements of the electrical properties of these films. Specifically, current-voltage measurements have been performed to determine the carrier density and conductivity. In addition, Schottky barrier heights and contact resistances for Ti and Ti/Au contacts were determined. Key parameters in these analyses were the number of graphene layers and the annealing temperature which alters the doping level. For single layer films, carrier densities ranging from 2 x 1010 cm-2 to 2 x 1011 cm-2 measured, while conductivities of on the order of 6.8 x 105 Scm-1 were measured. These values compare favorably with normal (flat) graphene. Changes in conductivity resulting from diazonium functionalization of the buckled graphene surface were also studied. The results of these electrical characterization studies demonstrate the significant potential for using buckled graphene films in a variety of molecular electronics applications.

  2. Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation

    Science.gov (United States)

    Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Neyts, Erik C.; Bogaerts, Annemie

    2016-09-01

    Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) is significantly influenced by the absolute gas flow rate in the range of 50-600 sccm, with a maximum at around 200 sccm. Therefore, we numerically investigate the effects of the gas flow rate on the bulk plasma properties and on the etch rate, to obtain more insight in the underlying reasons of this effect. A hybrid Monte Carlo—fluid model is applied to simulate an SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) the residence time of the gas and (ii) the temperature profile of the plasma in the ICP volume, resulting indeed in a maximum etch rate at 200 sccm.

  3. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.

    Science.gov (United States)

    Lee, Junmyung; Efremov, Alexander; Yeom, Geun Young; Lim, Nomin; Kwon, Kwang-Ho

    2015-10-01

    An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0-50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film.

  4. Direct evidence of reactive ion etching induced damages in Ge{sub 2}Sb{sub 2}Te{sub 5} based on different halogen plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juntao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Microsystem Technology Laboratory, Microsystem & Terahertz Research Center, Sichuan Province 610200 (China); Xia, Yangyang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Feng, Gaoming [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Dan; Xu, Zhen; Wang, Weiwei [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Chan, Yipeng [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-08-15

    Highlights: • The results of SEM and AFM directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. • The XPS of Te 3d revealed the electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on CF4 etching GST films. • The sidewall of HBr etching GST is nearly vertical compared with others. • HBr is promising gas for GST etching in the fabrication of high-density memory devices. - Abstract: Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) in different halogen based plasmas (CF{sub 4}, Cl{sub 2} and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl{sub 2} etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF{sub 4}. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  5. Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates

    Science.gov (United States)

    Nakazaki, Nobuya; Matsumoto, Haruka; Eriguchi, Koji; Ono, Kouichi

    2015-09-01

    In the microfabrication of 3D transistors (e.g. Fin-FET), the sidewall roughness, such as LER and LWR caused by off-normal or oblique ion incidence during plasma etching, is a critical issue to be resolved, which in turn requires a better understanding of the effects of ion incidence angle θi on surface roughening. This paper presents surface roughening and rippling by oblique ion incidence during inductively coupled plasma etching of Si in Cl2, using the experimental setup as in our previous study. The oblique ion incidence was achieved by sheath control plates, which were placed on and electrically connected to the wafer stage. The plates had slits to vary the sheath structure thereon and to extract ions from plasma to samples on the bottom and/or side of the slits. The results indicated that at θi ~ 40° or oblique incidence; ripple structures were formed on surfaces perpendicularly to the direction of ion incidence, on the other hand, at θi ~ 80° or grazing incidence, small ripples or slit like grooves were formed on surfaces parallel to the direction of ion incidence, as predicted in our previous numerical investigations.

  6. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2017-02-01

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  7. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2017-02-07

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar(+) ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar(+) ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  8. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.

    Science.gov (United States)

    James, Teena; Kalinin, Yevgeniy V; Chan, Chih-Chieh; Randhawa, Jatinder S; Gaevski, Mikhail; Gracias, David H

    2012-07-11

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP)-assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and cone-angles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.

  9. A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

    Science.gov (United States)

    Sui, Jiaxing; Zhang, Saiqian; Liu, Zeng; Yan, Jun; Dai, Zhongling

    2016-06-01

    A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution. supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

  10. Etch characteristics of Ti in Cl2/N2 and TiN in Cl2/N2/BCl3 plasmas by response surface methodology

    Science.gov (United States)

    Muthukrishnan, N. Moorthy; Amberiadis, Kostas; Elshabini-Riad, Aicha

    1998-09-01

    The etch characteristics of titanium (Ti) film in Cl2/N2 plasmas and titanium nitride (TiN) film in Cl2/N2/BCl3 plasmas are examined by design of experiment using central composite-face centered type design and modeled by response surface methodology (RSM). The Ti and TiN etch experiments are carried out in a Lam Research Rainbow 4600 single wafer parallel plate metal etcher. For the Ti etch process, the effects of variation of the process parameters such as Cl2, N2 gas flow, RF power and reaction pressure on output responses, etch rate and etch uniformity, are investigated. For TiN etch process, BCl3 gas flow is added as a factor in addition to the factors listed above. A statistical analysis software package, JMP, is used to design experiment and analyze the results. The factors are normalized with respect to center point for the design and analysis of the experiment in order to compare the relative significance of the model terms. Using the etch rate and uniformity data obtained from the experiment, a quadratic model is developed for etch rate and uniformity for each rate and uniformity data obtained from the experiment, a quadratic model is developed for etch rate and uniformity for each of the films. From the coefficients of the models thus developed, it is easy to determine the relative influence of the first and second order effects of factors, and two factor interactions on the etch rate and uniformity response. Contour plots, which are helpful in determining the optimum process window, are generated for both etch rate and uniformity factors. Addition of nitrogen is found to decrease the etch rate due to dilution effect. The reaction pressure decreases the etch rate probably due to loss of energies of radicals, ions and electrons. Increasing of all the factors except nitrogen flow lead to better etch uniformity. Increase in nitrogen flow is causing poor uniformity probably due to dilution of etchant species leading to across-the-wafer nonuniformity.

  11. Nanostructured plasma etched, magnetron sputtered nanolaminar Cr{sub 2}AlC MAX phase thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grieseler, Rolf, E-mail: rolf.grieseler@tu-ilmenau.de [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hähnlein, Bernd; Stubenrauch, Mike [TU Ilmenau, Institute of Micro and Nanotechnologies MacroNano, Chair Nanotechnology, Gustav-Kirchhoff-Str. 1, 98693 Ilmenau (Germany); Kups, Thomas [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Wilke, Marcus [MFPA Weimar, Testing Center for Thin Films and Material Properties at TU Ilmenau, Gustav-Kirchhoff-Str. 5, Ilmenau (Germany); Hopfeld, Marcus [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Pezoldt, Jörg [TU Ilmenau, Institute of Micro and Nanotechnologies MacroNano, Chair Nanotechnology, Gustav-Kirchhoff-Str. 1, 98693 Ilmenau (Germany); Schaaf, Peter [TU Ilmenau, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, Chair Materials for Electronics, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)

    2014-02-15

    The knowledge of the mechanical properties of new materials determines essentially their usability and functionality when used in micro- and nanostructures. MAX phases are new and highly interesting materials due to their unique combination of materials properties. In this article a new method for producing the Cr{sub 2}AlC MAX phase is presented. Thin film elemental multilayer deposition and subsequent rapid thermal annealing forms the MAX phase within seconds. Additionally, free standing microstructures (beams and cantilevers) based on this MAX phase films are prepared by plasma etching. The mechanical properties of these MAX phase microstructures are investigated.

  12. Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP process

    Directory of Open Access Journals (Sweden)

    Jianxin Zhu

    2017-05-01

    Full Text Available Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5 (2013] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984; X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, “The Stopping and Range of Ions in Matter,” Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones “12-6” potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or “magnetic dead-layer” thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

  13. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma.

    Science.gov (United States)

    Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S

    2016-07-01

    The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar(+) ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.

  14. Plasma resonance in anisotropic layered high-Tc superconductors

    DEFF Research Database (Denmark)

    Sakai, Shigeki; Pedersen, Niels Falsig

    1999-01-01

    The plasma resonance is described theoretically by the inductive coupling model for a large stacked Josephson-junction system such as the intrinsic Josephson-junction array in anisotropic high- T-c superconductors. Eigenmodes of the plasma oscillation are analytically described and a numerical...

  15. Electron Cyclotron Resonance Heating of a High-Density Plasma

    DEFF Research Database (Denmark)

    Hansen, F. Ramskov

    1986-01-01

    Various schemes for electron cyclotron resonance heating of tokamak plasmas with the ratio of electron plasma frequency to electron cyclotron frequency, "»pe/^ce* larger than 1 on axis, are investigated. In particular, a mode conversion scheme is investigated using ordinary waves at the fundamental...

  16. In-situ monitoring of etching of bovine serum albumin using low-temperature atmospheric plasma jet

    Science.gov (United States)

    Kousal, J.; Shelemin, A.; Kylián, O.; Slavínská, D.; Biederman, H.

    2017-01-01

    Bio-decontamination of surfaces by means of atmospheric pressure plasma is nowadays extensively studied as it represents promising alternative to commonly used sterilization/decontamination techniques. The non-equilibrium atmospheric pressure plasmas were already reported to be highly effective in removal of a wide range of biological residual from surfaces. Nevertheless the kinetics of removal of biological contamination from surfaces is still not well understood as the majority of performed studies were based on ex-situ evaluation of etching rates, which did not allow investigating details of plasma action on biomolecules. This study therefore presents a real-time, in-situ ellipsometric characterization of removal of bovine serum albumin (BSA) from surfaces by low-temperature atmospheric plasma jet operated in argon. Non-linear and at shorter distances between treated samples and nozzle of the plasma jet also non-monotonic dependence of the removal rate on the treatment duration was observed. According to additional measurements focused on the determination of chemical changes of treated BSA as well as temperature measurements, the observed behavior is most likely connected with two opposing effects: the formation of a thin layer on the top of BSA deposit enriched in inorganic compounds, whose presence causes a gradual decrease of removal efficiency, and slight heating of BSA that facilitates its degradation and volatilization induced by chemically active radicals produced by the plasma.

  17. Magnetic Field Dependence and Q of the Josephson Plasma Resonance

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Finnegan, T. F.; Langenberg, D. N.

    1972-01-01

    The results of an experimental study of the magnetic field dependence of the Josephson-plasma-resonance frequency and linewidth in Pb-Pb oxide-Pb tunnel junctions are reported. In the presence of an external magnetic field, the plasma mode is found to be sensitive to an antisymmetric component...... of supercurrent density which is not observed in conventional measurements of the field-dependent critical current. The frequency and field dependence of the plasma-resonance linewidth are interpreted as evidence that the previously unobserved quasiparticle-pair-interference tunnel current predicted by Josephson...

  18. Feature Profile Evolution During Etching of SiO2 in Radio-Frequency or Direct-Current Plasmas

    Science.gov (United States)

    Zhao, Zhanqiang; Dai, Zhongling; Wang, Younian

    2012-01-01

    We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield (physical sputtering in this paper), neutral and ion angular distributions, and reflection of ions or neutrals on the surface of a photoresist or SiO2. The effect of positive charge accumulation on the surface of insulated mask or SiO2 is studied and the charge accumulation contributes to a deflection of ion trajectory. The wafer profile evolution has been simulated using a cellular-automata-like method under radio-frequency (RF) bias and direct-current (DC) bias, respectively. On the basis of the critical role of angular distribution of ions or neutrals, the wafer profile evolution has been simulated for different variances of angles. Observed microtrenching has been well reproduced in the simulator. The ratio of neutrals to ions has been considered and the result shows that because the neutrals are not accelerated by an electric field, their energy is much lower compared with ions, so they are easily reflected on the surface of SiO2, which makes the trench shallower.

  19. Silver porous nanotube built three-dimensional films with structural tunability based on the nanofiber template-plasma etching strategy.

    Science.gov (United States)

    He, Hui; Cai, Weiping; Lin, Yongxing; Dai, Zhengfei

    2011-03-01

    A facile and high-throughput strategy is presented to fabricate three-dimensional (3D) hierarchically porous Ag films, with clean surfaces, via plasma etching Ag-coated electrospun nanofiber template. The films are built of Ag porous nanotubes and are homogeneous in macro-size but rough and porous in nanoscale. Each nanotube-block is micro/nanostructured with evenly distributed nanopores on the tube walls. The film architecture (or the shape, arrangement, and distribution density of porous nanotubes; the number and size of nanopores) can be easily controlled by the nanofiber-template configuration, Ag coating, and plasma etching conditions. Such hierarchically porous films could be very useful, such as in catalysis, sensors, and nanodevices. They have exhibited significantly structurally enhanced surface-enhanced Raman scattering performance with good stability and reproduction, and shown the possibility of molecule-level detection. Also, the strategy is universal for fabricating other hierarchically structured 3D metal porous films, such as porous Ag hollow sphere arrays.

  20. Non-thermal atmospheric pressure plasma etching of F:SnO2 for thin film photovoltaics.

    Science.gov (United States)

    Hodgkinson, J L; Thomson, M; Cook, I; Sheel, D W

    2011-09-01

    Thin film based photovoltaic systems offer significant advantage over wafer based technologies enabling the use of low cost, large area substrates such as glass, greatly facilitating the construction and integration of large modules. The viability of such systems has advanced in recent years, with researchers striving to optimise performance through the development of materials and cell design. One way to improve efficiency is to texture the interface between the TCO and the absorber layer to maximise scattering over the appropriate wavelength range, with nanometre scale features such as pyramids being reported as giving high scatter. These textures may be achieved by advanced growth processes, such as CVD, post growth etching or a combination of both. In this work, textured F:SnO2 films produced by APCVD were favourably modified using a remote, non thermal, atmospheric plasma to activate a selective dry etch process resulting in significantly enhanced topography. Uniform treatment of the samples was achieved by translation of the samples below the plasma head. Advantages of this approach, compared to competitive technologies such as wet chemical processes, are the relatively low power consumption and ease of scalability and retroprocess integration. The modified structures were studied using AFM, SEM and EDAX, with the observed topography controlled by process variables. Optical properties were assessed along with Hall measurements.

  1. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  2. Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas

    Science.gov (United States)

    Li, Xi; Ling, Li; Hua, Xuefeng; Fukasawa, Masanaga; Oehrlein, Gottlieb S.; Barela, Marcos; Anderson, Harold M.

    2003-01-01

    Gas mixtures based on C4F8 are promising for the development of high-performance SiO2 plasma etching processes. Measurements of important gas phase species, thin film etching rates and surface chemistry changes were performed for inductively coupled plasmas fed with C4F8/Ar and C4F8/O2 gas mixtures. The addition of Ar to C4F8 causes a strong increase of the plasma density relative to that of pure C4F8 (by up to a factor of 4× at 90% Ar). For O2 addition the changes in plasma density are small up to 90% O2 relative to pure C4F8. Infrared laser absorption spectroscopy was used to determine the absolute densities of neutral CF, CF2 and COF2 radical species as a function of the gas composition. The densities of CF and CF2 were enhanced for certain operating conditions when Ar was added to C4F8 as long as the amount of Ar remained below 20%. For instance, the partial pressure of CF was 0.1 mTorr for a 20 mTorr 1400 W source power discharge for pure C4F8, and increased to 0.13 mTorr at 20% Ar. Above 20% Ar it decreased, roughly following the gas dilution. The CF2 partial pressure was about 5 mTorr for the same conditions, and increased by about 10% at 20% Ar. Above 20% Ar the CF2 partial pressure decreased roughly linearly with the amount of Ar added, to about 2 mTorr at 50% Ar. Of particular interest was the analysis of the difference in behavior of CF, CF2 and COF2 partial pressures over SiO2 and Si surfaces, with and without rf bias power (in the latter case a self-bias voltage of -100 V was used). For pure C4F8 discharges at 20 mTorr and 1400 W inductive power without rf bias the partial pressures of CF, CF2 and COF2 radicals are comparable over SiO2 and Si surfaces. Upon applying a rf bias, the CF2 partial pressure over a SiO2 surface is reduced much more strongly than for a Si surface. The overall reduction appears to be consistent with the relative SiO2/Si etch rate ratios observed for these conditions. These results indicate that CF2 is consumed during the

  3. Modification of Plasma Solitons by Resonant Particles

    DEFF Research Database (Denmark)

    Karpman, Vladimir; Lynov, Jens-Peter; Michelsen, Poul;

    1979-01-01

    Experimental and numerical results are compared with new theoretical results describing soliton propagation and deformation in a strongly magnetized, plasma-loaded waveguide.......Experimental and numerical results are compared with new theoretical results describing soliton propagation and deformation in a strongly magnetized, plasma-loaded waveguide....

  4. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Hadjadj, Aomar, E-mail: aomar.hadjadj@univ-reims.fr; Larbi, Fadila; Gilliot, Mickaël [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM, EA 4695), Université de Reims Champagne-Ardenne (France); Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM, CNRS UMR 7647), Ecole Polytechnique (France)

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H{sub 2} plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  5. Development of Polysulfone Hollow Fiber Porous Supports for High Flux Composite Membranes: Air Plasma and Piranha Etching

    Directory of Open Access Journals (Sweden)

    Ilya Borisov

    2017-02-01

    Full Text Available For the development of high efficiency porous supports for composite membrane preparation, polysulfone (PSf hollow fiber membranes (outer diameter 1.57 mm, inner diameter 1.12 mm were modified by air plasma using the low temperature plasma treatment pilot plant which is easily scalable to industrial level and the Piranha etch (H2O2 + H2SO4. Chemical and plasma modification affected only surface layers and did not cause PSf chemical structure change. The modifications led to surface roughness decrease, which is of great importance for further thin film composite (TFC membranes fabrication by dense selective layer coating, and also reduced water and ethylene glycol contact angle values for modified hollow fibers surface. Furthermore, the membranes surface energy increased two-fold. The Piranha mixture chemical modification did not change the membranes average pore size and gas permeance values, while air plasma treatment increased pore size 1.5-fold and also 2 order enhanced membranes surface porosity. Since membranes surface porosity increased due to air plasma treatment the modified membranes were used as efficient supports for preparation of high permeance TFC membranes by using poly[1-(trimethylsilyl-1-propyne] as an example for selective layer fabrication.

  6. Etching of a-Si:H thin films by hydrogen plasma: a view from in situ spectroscopic ellipsometry.

    Science.gov (United States)

    Hadjadj, Aomar; Larbi, Fadila; Gilliot, Mickaël; Roca i Cabarrocas, Pere

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H2 plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  7. Combined dry plasma etching and online metrology for manufacturing highly focusing x-ray mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Berujon, S., E-mail: berujon@esrf.eu; Ziegler, E., E-mail: ziegler@esrf.eu; Cunha, S. da; Bonneau, F.; Baker, R.; Clement, J.-M.; Perez, M.; Thuaudet, S.; Malandrino, G.; Vivo, A.; Lantelme, B.; Barrett, R.; Susini, J. [European Synchrotron Radiation Facility, CS40220, 38043 Grenoble Cedex 9 (France)

    2016-07-27

    A new figuring station was designed and installed at the ESRF beamline BM05. It allows the figuring of mirrors within an iterative process combining the advantage of online metrology with dry etching. The complete process takes place under a vacuum environment to minimize surface contamination while non-contact surfacing tools open up the possibility of performing at-wavelength metrology and eliminating placement errors. The aim is to produce mirrors whose slopes do not deviate from the stigmatic profile by more than 0.1 µrad rms while keeping surface roughness in the acceptable limit of 0.1-0.2 nm rms. The desired elliptical mirror surface shape can be achieved in a few iterations in about a one day time span. This paper describes some of the important aspects of the process regarding both the online metrology and the etching process.

  8. Interaction of plasma vortices with resonant particles

    DEFF Research Database (Denmark)

    Jovanovic, D.; Pécseli, Hans; Juul Rasmussen, J.

    1990-01-01

    Kinetic effects associated with the electron motion along magnetic field lines in low‐beta plasmas are studied. Using the gyrokinetic description of electrons, a kinetic analog of the reduced magnetohydrodynamic equations is derived, and it is shown that in the strongly nonlinear regime they poss......Kinetic effects associated with the electron motion along magnetic field lines in low‐beta plasmas are studied. Using the gyrokinetic description of electrons, a kinetic analog of the reduced magnetohydrodynamic equations is derived, and it is shown that in the strongly nonlinear regime...... particles. The evolution equations indicate the possibility of excitation of plasma vortices by electron beams....

  9. Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

    Directory of Open Access Journals (Sweden)

    Manuel R. Gonçalves

    2011-08-01

    Full Text Available We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost.Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement.

  10. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    Science.gov (United States)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  11. Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching.

    Science.gov (United States)

    Gonçalves, Manuel R; Makaryan, Taron; Enderle, Fabian; Wiedemann, Stefan; Plettl, Alfred; Marti, Othmar; Ziemann, Paul

    2011-01-01

    We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE) of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost.Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement.

  12. Fabrication of SMD 32.768 kHz tuning fork-type crystals: photolithography and selective etching of an array of quartz tuning fork resonators

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S. [Dept. of Molecular Science and Technology, Ajou Univ., Suwon (Korea); Lee, J.Y.; Park, T.S. [Research and Development Center, Samsung Electro-Mechanics Co., Ltd., Suwon (Korea)

    2001-09-01

    Negative photoresist photolithography was used to etch array of quartz tuning forks for use in Qualcomm trademark mobile station modem (MSM)-3000{sup TM} central processing unit (CPU) chips of code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) units. It was found superior to positive photoresist photolithography. Quartz tuning fork blanks with optimum shock-resistant characteristics were designed using finite element method (FEM) and processing condition was devised for reproducible precision etching of Z-cut quartz wafer into array of tuning forks. Tuning fork pattern was transferred via ordinary photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. Tightly adhering and pinhole-free 600/2000 A chromium/gold mask is coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the backside of the wafer. With protective metallization area of tuning fork geometry thus formed, etching through quartz wafer was done at 80 C in a {+-} 1.5 C controlled bath containing concentrated solution of ammonium bifluoride to remove unwanted area of the quartz wafer. Surface finish of quartz wafer prior to etching and the quality of quartz crystals used primarily affected the quality of quartz wafer surface finish after quartz etching. At 80 C, selective etching of 100 {mu}m quartz wafer could be effected within 90 min. Reproducible precision selective etching method has thus been established and enables mass production of miniature tuning fork resonators photolithographically. (orig.)

  13. Electron Plasmas Cooled by Cyclotron-Cavity Resonance

    CERN Document Server

    Povilus, A P; Evans, L T; Evetts, N; Fajans, J; Hardy, W N; Hunter, E D; Martens, I; Robicheaux, F; Shanman, S; So, C; Wang, X; Wurtele, J S

    2016-01-01

    We observe that high-Q electromagnetic cavity resonances increase the cyclotron cooling rate of pure electron plasmas held in a Penning-Malmberg trap when the electron cyclotron frequency, controlled by tuning the magnetic field, matches the frequency of standing wave modes in the cavity. For certain modes and trapping configurations, this can increase the cooling rate by factors of ten or more. In this paper, we investigate the variation of the cooling rate and equilibrium plasma temperatures over a wide range of parameters, including the plasma density, plasma position, electron number, and magnetic field.

  14. Electron cyclotron resonance heating in a short cylindrical plasma system

    Indian Academy of Sciences (India)

    Vipin K Yadav; D Bora

    2004-09-01

    Electron cyclotron resonance (ECR) plasma is produced and studied in a small cylindrical system. Microwave power is delivered by a CW magnetron at 2.45 GHz in TE10 mode and launched radially to have extraordinary (X) wave in plasma. The axial magnetic field required for ECR in the system is such that the first two ECR surfaces ( = 875.0 G and = 437.5 G) reside in the system. ECR plasma is produced with hydrogen with typical plasma density e as 3.2 × 1010 cm-3 and plasma temperature e between 9 and 15 eV. Various cut-off and resonance positions are identified in the plasma system. ECR heating (ECRH) of the plasma is observed experimentally. This heating is because of the mode conversion of X-wave to electron Bernstein wave (EBW) at the upper hybrid resonance (UHR) layer. The power mode conversion efficiency is estimated to be 0.85 for this system. The experimental results are presented in this paper.

  15. Active plasma resonance spectroscopy: a functional analytic description

    Science.gov (United States)

    Lapke, M.; Oberrath, J.; Mussenbrock, T.; Brinkmann, R. P.

    2013-04-01

    The term ‘active plasma resonance spectroscopy’ denotes a class of diagnostic methods which employ the ability of plasmas to resonate on or near the plasma frequency. The basic idea dates back to the early days of discharge physics: a signal in the GHz range is coupled to the plasma via an electrical probe; the spectral response is recorded, and then evaluated with a mathematical model to obtain information on the electron density and other plasma parameters. In recent years, the concept has found renewed interest as a basis of industry compatible plasma diagnostics. This paper analyzes the diagnostic technique in terms of a general description based on functional analytic (or Hilbert Space) methods which hold for arbitrary probe geometries. It is shown that the response function of the plasma-probe system can be expressed as a matrix element of the resolvent of an appropriately defined dynamical operator. A specialization of the formalism to a symmetric probe design is given, as well as an interpretation in terms of a lumped circuit model consisting of series resonance circuits. We present ideas for an optimized probe design based on geometric and electrical symmetry.

  16. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns.

    Science.gov (United States)

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L

    2014-07-18

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  17. Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation

    Science.gov (United States)

    Jiang, Xiaolong; Zhang, Lijuan; Bai, Yang; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Liao, Wei; Zhang, Chuanchao; Yang, Ke; Chen, Jing; Jiang, Yilan; Yuan, Xiaodong

    2017-07-01

    In this work, we experimentally investigate the surface nano-roughness during the inductively coupled plasma etching of fused silica, and discover a novel bi-stage time evolution of surface nano-morphology. At the beginning, the rms roughness, correlation length and nano-mound dimensions increase linearly and rapidly with etching time. At the second stage, the roughening process slows down dramatically. The switch of evolution stage synchronizes with the morphological change from dual-scale roughness comprising long wavelength underlying surface and superimposed nano-mounds to one scale of nano-mounds. A theoretical model based on surface morphological change is proposed. The key idea is that at the beginning, etched surface is dual-scale, and both larger deposition rate of etch inhibitors and better plasma etching resistance at the surface peaks than surface valleys contribute to the roughness development. After surface morphology transforming into one-scale, the difference of plasma resistance between surface peaks and valleys vanishes, thus the roughening process slows down.

  18. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  19. Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

    Science.gov (United States)

    Kim, Nam Hun; Jeon, Min Hwan; Kim, Tae Hyung; Yeom, Geun Young

    2015-11-01

    The characteristics of embedded pulse plasma using 60 MHz radio frequency as the source power and 2 MHz radio frequency as the bias power were investigated for the etching of SiO2 masked with an amorphous carbon layer (ACL) using an Ar/C4F8/O2 gas mixture. Especially, the effects of the different pulse duty ratio of the embedded dual-frequency pulsing between source power and bias power on the characteristics on the plasma and SiO2 etching were investigated. The experiment was conducted by varying the source duty percentage from 90 to 30% while bias duty percentage was fixed at 50%. Among the different duty ratios, the source duty percentage of 60% with the bias duty percentage of 50% exhibited the best results in terms of etch profile and etch selectivity. The change of the etch characteristics by varying the duty ratios between the source power and bias power was believed to be related to the different characteristics of gas dissociation, fluorocarbon passivation, and ion bombardment observed during the different source/bias pulse on/off combinations. In addition, the instantaneous high electron temperature peak observed during each initiation of the source pulse-on period appeared to affect the etch characteristics by significant gas dissociation. The optimum point for the SiO2 etching with the source/bias pulsed dual-frequency capacitively coupled plasma system was obtained by avoiding this instant high electron temperature peak while both the source power and bias power were pulsed almost together, therefore, by an embedded RF pulsing.

  20. Plasma etched surface scanning inspection recipe creation based on bidirectional reflectance distribution function and polystyrene latex spheres

    Science.gov (United States)

    Saldana, Tiffany; McGarvey, Steve; Ayres, Steve

    2014-04-01

    The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan results. Historically all Surface Scanning Inspection System wafer scanning recipes have been based upon Polystyrene Spheres wafer deposition for each film stack and the subsequent creation of light scattering sizing response curves. This paper explores the feasibility of the elimination of Polystyrene Latex Sphere (PSL) and/or process particle deposition on both filmed and bare Silicon wafers prior to Surface Scanning Inspection System recipe creation. The study will explore the theoretical maximal Surface Scanning Inspection System sensitivity based on PSL recipe creation in conjunction with the maximal sensitivity derived from Bidirectional Reflectance Distribution Function (BRDF) maximal sensitivity modeling recipe creation. The surface roughness (Root Mean Square) of plasma etched wafers varies dependent upon the process film stack. Decrease of the root mean square value of the wafer sample surface equates to higher surface scanning inspection system sensitivity. Maximal sensitivity SSIS scan results from bare and filmed wafers inspected with recipes created based upon Polystyrene/Particle Deposition and recipes created based upon BRDF modeling will be overlaid against each other to determine maximal sensitivity and capture rate for each type of recipe that was created with differing recipe creation modes. A statistically valid sample of defects from each Surface Scanning Inspection system recipe creation mode and each bare wafer/filmed substrate will be reviewed post SSIS System processing on a Defect Review Scanning Electron Microscope (DRSEM). Native defects, Polystyrene Latex Spheres will be collected from each statistically valid defect bin category/size. The data collected from the DRSEM will be utilized to

  1. Gas breakdown and plasma impedance in split-ring resonators

    Science.gov (United States)

    Hoskinson, Alan R.; Parsons, Stephen; Hopwood, Jeffrey

    2016-02-01

    The appearance of resonant structures in metamaterials coupled to plasmas motivates the systematic investigation of gas breakdown and plasma impedance in split-ring resonators over a frequency range of 0.5-9 GHz. In co-planar electrode gaps of 100 μm, the breakdown voltage amplitude decreases from 280 V to 225 V over this frequency range in atmospheric argon. At the highest frequency, a microplasma can be sustained using only 2 mW of power. At 20 mW, we measure a central electron density of 2 × 1020 m-3. The plasma-electrode overlap plays a key role in the microplasma impedance and causes the sheath impedance to dominate the plasma resistance at very low power levels. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

  2. Surface plasmon resonance investigation of optical detection in plasma-modified phospholipid layers

    Energy Technology Data Exchange (ETDEWEB)

    Park, Byoungchoo; Cho, Chanyoun; Choi, Kyoungho; Jeon, Honggoo [Kwangwoon University, Seoul (Korea, Republic of)

    2012-03-15

    We herein report on a study of surface plasmon resonance (SPR) in thin gold (Au) films coated with thin layers of phospholipid material, which had been exposed to an atmospheric pressure (AP) plasma containing both pure Ar and Ar mixed with O{sub 2} (Ar/O{sub 2}, 0.8%). The phospholipid material that we used for the SPR experiments was lecithin, and the AP plasma system was applied in air by means of a radio-frequency (RF) plasma generator. A thin (∼60 nm) film of Au and a thin (∼15 nm) layer of lecithin were deposited and attached to the face of a prism, and surface plasmon modes were excited along the interfaces of the prism-Au-lecithin-air system by means of prism coupling using a He-Ne Laser (632.8 nm). The experimental SPR reflectance curves of the Au-lecithin-air modes were found to be shifted towards those of the Au-air mode with increasing applications of AP RF plasma treatment. From the shifts in the SPR curves, we found that the estimated thickness of the lecithin layer treated with a pure Ar plasma showed a linear decrease with etching rate of about 3 nm per treatment while the thickness of the lecithin layer treated with a mixed Ar/O{sub 2} plasma showed a tendency to saturate following a large initial decrease (ca. 14 nm). All these results demonstrate that the use of SPR sensing could facilitate the detection of extremely small variations in plasma-treated films of biomaterials.

  3. Three-Dimensional Polymeric Mechanical Metamaterials Fabricated by Multibeam Interference Lithography with the Assistance of Plasma Etching.

    Science.gov (United States)

    Kang, Da-Young; Lee, Wooju; Kim, Dongchoul; Moon, Jun Hyuk

    2016-08-23

    The pentamode structure is a type of mechanical metamaterial that displays dramatically different bulk and shear modulus responses. In this study, a face-centered cubic (FCC) polymeric microstructure was fabricated by using SU8 negative-type photoresists and multibeam interference exposure. Isotropic plasma etching is used to control the solid-volume fraction; for the first time, we obtained a structure with the minimum solid-volume fraction as low as 15% that still exhibited high structural integrity. Using this method, we reduced the width of atom-to-atom connections by up to 40 nm. We characterize the effect of the connection area on the anisotropy of the mechanical properties using simulations. Nanoindentation measurements were also conducted to evaluate the energy dissipation by varying the connection area. The Young's/shear modulus ratio is 5 times higher for the etched microstructure than that of the bulk SU8 materials. The use of interference lithography may enable the properties of microscale materials to be engineered for various applications, such as MEMS.

  4. Electron cyclotron resonance breakdown studies in a linear plasma system

    Indian Academy of Sciences (India)

    Vipin K Yadav; K Sathyanarayana; D Bora

    2008-03-01

    Electron cyclotron resonance (ECR) plasma breakdown is studied in a small linear cylindrical system with four different gases - hydrogen, helium, argon and nitrogen. Microwave power in the experimental system is delivered by a magnetron at 2.45 ± 0.02 GHz in TE10 mode and launched radially to have extra-ordinary (X) wave in plasma. The axial magnetic field required for ECR in the system is such that the fundamental ECR surface ( = 875.0 G) resides at the geometrical centre of the plasma system. ECR breakdown parameters such as plasma delay time and plasma decay time from plasma density measurements are carried out at the centre using a Langmuir probe. The operating parameters such as working gas pressure (1 × 10-5 -1 × 10-2 mbar) and input microwave power (160{800 W) are varied and the corresponding effect on the breakdown parameters is studied. The experimental results obtained are presented in this paper.

  5. A structure zone diagram including plasma based deposition and ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  6. Fabrication of high-efficiency and low-stray-light grating by inductively coupled plasma(ICP) etching-polishing method.

    Science.gov (United States)

    Tan, X; Jiao, Q B; Qi, X D; Bayan, H

    2016-03-21

    Gratings with stray light of 4.99 × 10-7-5.67 × 10-7 and efficiency of 93%-95% in a wavelength range of 1592 nm-1632 nm on Si-surface-modification SiC, fused silica and BK7 have been fabricated by the method of ICP etching-polishing. The CHF3 and SF6 plasma were used to etch a preliminary grating profile. Ar and O2 plasma with low energy were then used to polish the grating to acquire low surface roughness and groove profiles closer to the ideal profiles. The morphologies of the gratings were characterized by AFM. The efficiencies and stray light were measured quantitatively by self-developed equipment. These results show that the ICP etching-polishing method is a promising candidate for production of good quality gratings into common optical materials.

  7. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Directory of Open Access Journals (Sweden)

    Chia-Pin Yeh

    2016-08-01

    Full Text Available Reactive ion etching (RIE technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  8. Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

    Science.gov (United States)

    Shinoda, K.; Miyoshi, N.; Kobayashi, H.; Miura, M.; Kurihara, M.; Maeda, K.; Negishi, N.; Sonoda, Y.; Tanaka, M.; Yasui, N.; Izawa, M.; Ishii, Y.; Okuma, K.; Saldana, T.; Manos, J.; Ishikawa, K.; Hori, M.

    2017-05-01

    The demand for precisely controlled etching is increasing as semiconductor device geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will become one of the key technologies in semiconductor device manufacturing at nanometer dimensions. This review describes recent trends in semiconductor devices and some of the latest results on cyclic atomic-level etching. In particular, it focuses on two types of cyclic etching that use different heating procedures: infrared irradiation for isotropic etching and Ar+ ion bombardment for anisotropic etching. It describes how an inductively-coupled-plasma down-flow etching apparatus with infrared lamps can be used for isotropic cyclic etching. The isotropic cyclic etching of SiN involves the formation and thermal desorption of ammonium hexafluorosilicate-based surface modified layers. This method features high selectivity with respect to SiO2, atomic-level control of the amount of SiN etching, and isotropic etched features. On the other hand, the anisotropic cyclic etching with Ar+ ion bombardment uses a microwave electron-cyclotron-resonance plasma etching apparatus. The anisotropic process for poly Si is composed of cyclic repetitions of chlorine adsorption and Ar+ ion bombardment. The anisotropic process for SiN is composed of cyclic repetitions involving an adsorption step using hydrofluorocarbon chemistry and a desorption step using Ar+ ion bombardment. Potential applications of these isotropic/anisotropic cyclic etching processes are described.

  9. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is encountere

  10. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  11. No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model.

    Science.gov (United States)

    Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, Ss; Soballe, K

    2013-01-01

    Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (petching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time.

  12. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  13. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  14. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  15. Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations

    Science.gov (United States)

    Jo, Yeong-Deuk; Koh, Jung-Hyuk; Ha, Jae-Geun; Kim, Ji-Hong; Cho, Dae-Hyung; Moon, Byung-Moo; Koo, Sang-Mo

    2009-12-01

    Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (Cp) in the substrate, when the interface charges (Qf) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Qf) have been found to increase by ~1.94 × 1012 cm-2 with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.

  16. Active plasma resonance spectroscopy: A functional analytic description

    CERN Document Server

    Lapke, Martin; Mussenbrock, Thomas; Brinkmann, Ralf Peter

    2012-01-01

    The term "Active Plasma Resonance Spectroscopy" refers to a class of diagnostic methods which employ the ability of plasmas to resonate on or near the plasma frequency. The basic idea dates back to the early days of discharge physics: An signal in the GHz range is coupled to the plasma via an electrical probe; the spectral response is recorded, and then evaluated with a mathematical model to obtain information on the electron density and other plasma parameters. In recent years, the concept has found renewed interest as a basis of industry compatible plasma diagnostics. This paper analyzes the diagnostics technique in terms of a general description based on functional analytic (or Hilbert Space) methods which hold for arbitrary probe geometries. It is shown that the response function of the plasma-probe system can be expressed as a matrix element of the resolvent of an appropriately defined dynamical operator. A specialization of the formalism for a symmetric probe desing is given, as well as an interpreation...

  17. 多层等离子体蚀刻技术的研究%Novel Technique for Multi-Partitioned Plasma Etching

    Institute of Scientific and Technical Information of China (English)

    于斌斌; 袁军堂; 汪振华; 薛志松; 黄云林

    2013-01-01

    A novel technique, tnulti-partitioned plasma etching, was developed to simultaneously etch GaN wafers with reactive ion beams in the multi-partitioned reactor. In the newly-developed technique, the vacuum chamber was divided into multiple partitions (three or more partitions) ,each of which acts as a separate plasma etching unit, with its own gas inlet,sample holder,and electrodes.The etching capacity was considerably scaled up.The photo-resist was dry etched with the lab-built,multi-partition etching setup.The impacts of the etching conditions,including the pressure,geometry of the partition, ratio of oxygen and argon flow rates, etc. on the etching rate were experimentally evaluated. The results show the average etching rate and uniformity can be up to 14.395 nm/min and 9.8% ,respectively,under the optimized condi-tions:a pressure of 40 Pa,a RF power of 600 W,an O2/Ar ratio of 1/2;a continuous etching time of 20 min in the three partitions with the bottom-up separations of 50,55 and 60 mm.%干法刻蚀现已成为微小高深宽比结构加工与微细图形制作的重要手段.提出了一种新的干法刻蚀技术一多层等离子体蚀刻,充分利用腔体的空间布局,布置多层电极,并采用分层送气装置输送放电气体,实现多层同时进行刻蚀,可成倍提高产能.采用该技术刻蚀光阻为例,从空间与时间两个角度分析了工艺参数对刻蚀速率与均匀性的影响规律与作用机理.实验结果表明,极板间距为50/55/60mm(由下向上),工作压力为40Pa,R[O2:Ar]为1/2,RF功率为600W时,整炉次刻蚀速率均值为14.395nm/min,均匀性为9.8%,此时工艺最为合理.

  18. Tailoring the properties of asymmetric cellulose acetate membranes by gas plasma etching

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Engbers, G.H.M.; Wessling, Matthias; Feijen, Jan

    2002-01-01

    Cellulose triacetate (CTA) ultrafilters and cellulose acetate blend (CAB) desalination membranes were treated with a radiofrequency gas plasma (tetrafluoromethane (CF4) or carbon dioxide (CO2), 47¿49 W, 0.04¿0.08 mbar). Treatment times were varied between 15 s and 120 min. The plasma-treated top

  19. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was ......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber....... It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  20. Selective oxygen-plasma-etching technique for the formation of ZnO-FTO heterostructure nanotubes and their rectified photocatalytic properties.

    Science.gov (United States)

    Chantarat, N; Chen, Yu-Wei; Lin, Chin-Ching; Chiang, Mei-Ching; Chen, San-Yuan

    2010-12-06

    A novel ZnO-FTO heterostructure nanotube array was produced by combining a chemical solution process with oxygen-plasma etching. In this approach, presynthesized ZnO nanorod arrays act as templates, and FTO nanoparticles are deposited onto the ZnO nanorods by a simple spray pyrolysis method. X-ray photoelectron spectroscopy analysis demonstrated that the oxygen-plasma treatment decreased the O(2-)/OH(-) concentration ratio, resulting in dissociation of the Zn-O bonds and the outward diffusion of Zn cations to form an interior hollow, which is related to the formation of the hydroxyl functional group, Sn-OH, at the FTO surface. An etching evolution mechanism of the ZnO-FTO nanotubes via oxygen plasma was tentatively proposed in this study. Time-dependent photocurrent (I-T) measurements under ON-OFF cycles of UV illumination confirm that the 20-min etched sample exhibits a rectified photoresponse characteristic and a dark current increased by about 3 orders of magnitude over that of the unetched sample, which is attributed to the increased carrier concentration created at the surface conductive layer. This investigation offers an alternative selective etching method to lay the framework for nanoscale three-dimensional electrodes for solar-cell applications.

  1. Simulation of plasma filled hemispherical cavity as dielectric resonator antenna

    Science.gov (United States)

    Trenchev, G.; Kissóvski, Zh

    2016-10-01

    Plasma antennas are becoming an increasingly interesting research topic because of their uncommon characteristics. They are highly configurable, can be turned on and off rapidly, and exhibit lower thermal noise compared to metal antennas. In recent years, research has been conducted on cylindrical plasma columns sustained by DC, RF or microwave field, and their application as leaky wave antennas or as regular monopole antennas. Dielectric resonator antennas (DRA) with high dielectric permittivity are known for their small size and excellent operating characteristics for modern mobile communications (WiMAX, LTE). Hemispherical dielectric resonator antennas are characterized by simple shape, high radiation efficiency and wide bandwidth. Hemispherical DRA with a low density weakly ionized plasma as dielectric material will combine the positive features of plasma and dielectric antennas, and is particularly interesting, as antennas of this type have not been studied yet. The hemispherical plasma antenna is simulated with Ansoft HFSS in the microwave S-band. Obtained radiation pattern and bandwidth show the advantages of hemispherical plasma antennas for future communication technology.

  2. Atomic layer etching of silicon dioxide using alternating C4F8 and energetic Ar+ plasma beams

    Science.gov (United States)

    Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M.; Economou, Demetre J.

    2017-06-01

    Atomic layer etching (ALE) of SiO2 was studied by alternating exposure of a 5 nm-thick SiO2 film on Si substrate to (1) a plasma beam emanating from a c-C4F8 inductively coupled plasma (ICP), to grow a fluorocarbon (FC) film composed mainly of CF2, and (2) an energetic (130 eV) Ar+ ion beam extracted from a separate Ar ICP. In situ x-ray photoelectron spectroscopy was used to analyze the chemical composition of the near-surface region, and to quantify the thickness of the FC and SiO2 films. A very thin (3-6 Å), near self-limiting thickness CF2-rich FC film was found to deposit on the SiO2 surface with exposure to continuous or pulsed power C4F8 plasma beams, under conditions that generated a large relative flux of CF2. Following this, a FC film of similar composition grew at ~10 times slower rate. Exposure of the thin film to the Ar+ beam led to removal of 1.9 Å SiO2. An estimated yield of 1.3 SiO2 molecules-per-Ar+ was found for a single ALE step. The rate of 1.9 Å/cycle persisted over multiple ALE cycles, but a carbon-rich residual film did build up. This film can be removed by a brief exposure to an O2-containing plasma beam.

  3. Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits--A model prediction of damage in three dimensional structures

    Science.gov (United States)

    Eriguchi, Koji

    2014-10-01

    An increasing demand for high performance field-effect transistors (FETs) leads to the aggressive critical dimension shrinkage and the currently-emerging three dimensional (3D) geometry. Plasma processing is widely used also in the scaled- and 3D-FET (e.g. FinFET) manufacturing, where precise control of the reaction on the (sidewall) surfaces is a prime issue. In this study, damage creation mechanism during plasma etching--plasma-induced physical damage (PPD)--was investigated in such structures on the basis of the PPD range theory, atomistic simulations, and experiments. Compared to PPD in planar FETs (e.g. Si recess [2,3]), a stochastic modeling and atomistic simulations predicted that, during etching of ``fins'' in a 3D-FET, the following two mechanisms are responsible for damage creation in addition to an ion impact on the sidewall at an oblique incident angle: 1) incoming ions penetrate into the Si substrate and undergo scattering by Si atoms in the lateral direction even if the incident angle is normal to the surface and 2) some of Si atoms and ions sputtered at the surface being etched impact on the sidewall with energies sufficient to break Si-Si bonds. These straggling and sputtering processes are stochastic and fundamental, thus, result in 3D structure damage (``fin-damage''). The ``fin-damage'' induced by straggling was modeled by the PPD range theory. Molecular dynamics simulations clarified the mechanisms under the various plasma conditions. Quantum mechanical calculations showed that created defect structures play the role of a carrier trap site, which was experimentally verified by an electrical measurement. Since they are intrinsic natures of etching, both straggling and sputtering noted here should be implemented to design a low-damage etching process. This work was supported in part by Grant-in-Aid for Scientific Research (B) 23360321 from JSPS and STARC project.

  4. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  5. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  6. Effect of oxygen plasma on nanomechanical silicon nitride resonators

    Science.gov (United States)

    Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

    2017-08-01

    Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

  7. A study of increasing radical density and etch rate using remote plasma generator system

    Science.gov (United States)

    Lee, Jaewon; Kim, Kyunghyun; Cho, Sung-Won; Chung, Chin-Wook

    2013-09-01

    To improve radical density without changing electron temperature, remote plasma generator (RPG) is applied. Multistep dissociation of the polyatomic molecule was performed using RPG system. RPG is installed to inductively coupled type processing reactor; electrons, positive ions, radicals and polyatomic molecule generated in RPG and they diffused to processing reactor. The processing reactor dissociates the polyatomic molecules with inductively coupled power. The polyatomic molecules are dissociated by the processing reactor that is operated by inductively coupled power. Therefore, the multistep dissociation system generates more radicals than single-step system. The RPG was composed with two cylinder type inductively coupled plasma (ICP) using 400 kHz RF power and nitrogen gas. The processing reactor composed with two turn antenna with 13.56 MHz RF power. Plasma density, electron temperature and radical density were measured with electrical probe and optical methods.

  8. Hierarchical Pore Development by Plasma Etching of Zr-Based Metal-Organic Frameworks.

    Science.gov (United States)

    DeCoste, Jared B; Rossin, Joseph A; Peterson, Gregory W

    2015-12-07

    The typically stable Zr-based metal-organic frameworks (MOFs) UiO-66 and UiO-66-NH2 were treated with tetrafluoromethane (CF4 ) and hexafluoroethane (C2 F6 ) plasmas. Through interactions between fluoride radicals from the perfluoroalkane plasma and the zirconium-oxygen bonds of the MOF, the resulting materials showed the development of mesoporosity, creating a hierarchical pore structure. It is anticipated that this strategy can be used as a post-synthetic technique for developing hierarchical networks in a variety of MOFs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

    Directory of Open Access Journals (Sweden)

    Kaiyu Cui

    2013-02-01

    Full Text Available Double-slot photonic crystal waveguide (PCW in InP heterostructure is fabricated by inductively coupled plasma (ICP etching. Due to using an ultra-low pressure of 0.05 Pa, etch depths up to 3.5 μm for holes with diameter of 200 nm and 1.8 μm for slots of ∼40 nm are achieved, which indicate a record-high aspect-ratio, i.e. 45, for such narrow slots in InP heterostructure. Moreover, etching quality is evaluated based on both the transmission performance and the linewidth of micro-photoluminescence (μ-PL. In our measurement, a structure-dependent transmission-dip about 17 dB is obtained from a 17-μm-long W3 PCW, and a PL widening as small as 19 nm compared to the corresponding wafer is observed. These promising experimental results evidence the high etching quality realized in this work and confirm the feasibility of etching small-feature-size patterns by ICP technology for InP based devices in future mono-/hetero-integrated photonic circuits.

  10. Nanoshaping field emitters from glassy carbon sheets: a new functionality induced by H-plasma etching.

    Science.gov (United States)

    Gay, S; Orlanducci, S; Passeri, D; Rossi, M; Terranova, M L

    2016-09-14

    This paper reports on the morphological and electrical characterization at the nanometer scale and the investigation of the field emission characteristics of glassy carbon (GC) plates which underwent H-induced physical/chemical processes occurring in a dual-mode MW-RF plasma reactor. Plasma treatment produced on the GC surface arrays of vertically aligned conically shaped nanostructures, with density and height depending on the plasma characteristics. Two kinds of samples obtained under two different bias regimes have been deeply analyzed using an AFM apparatus equipped with tools for electric forces and surface potential measurements. The features of electron emission via the Field Emission (FE) mechanism have been correlated with the morphology and the structure at the nanoscale of the treated glassy carbon samples. The measured current density and the characteristics of the emission, which follow the Fowler-Nordheim law, indicate that the plasma-based methodology utilized for the engineering of the GC surfaces is able to turn conventional GC plates into efficient emission devices. The outstanding properties of GC suggest the use of such nanostructured materials for the assembling of cold cathodes to be used in a harsh environment and under extreme P/T conditions.

  11. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    Science.gov (United States)

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes.

  12. The LC resonance probe for determining local plasma density

    Energy Technology Data Exchange (ETDEWEB)

    Boris, D R; Fernsler, R F; Walton, S G, E-mail: david.boris.ctr@nrl.navy.mi [Naval Research Laboratory, Charge Particle Physics Branch-Code 6752, Plasma Physics Division, 4555 Overlook Ave. SW, Washington, DC 20375 (United States)

    2011-04-15

    We present a novel plasma diagnostic for measuring local plasma density in reactive-gas plasmas, and depositing plasmas. The diagnostic uses a network analyzer to measure the LC resonance (LCR) frequency of a parallel plate capacitor with inductive leads. The location of the LCR ({omega}{sub R}) in frequency space is then used as a measure of the plasma dielectric constant bold varepsilon{sub p} between the plates. By properly constructing the LCR probe, {omega}{sub R} can be tuned such that {omega}{sub R} >> {omega}{sub ce}, where {omega}{sub ce} is the electron-cyclotron frequency. Thus, the probe can be used in plasmas with varying degrees of magnetization while avoiding complications introduced to bold varepsilon{sub p} when {omega} is comparable to {omega}{sub ce}. Density measurements from the LCR probe are compared with Langmuir probe measurements in an electron-beam generated plasma in which density varied from 10{sup 9} to 10{sup 11} cm{sup -3}. An axial magnetic field, typically used to confine the electron beam, was varied between 0 to 300 G. The LCR probe showed good agreement with a Langmuir probe across the entire range of magnetic fields.

  13. Wakefield Resonant Excitation by Intense Laser Pulse in Capillary Plasma%Wakefield Resonant Excitation by Intense Laser Pulse in Capillary Plasma

    Institute of Scientific and Technical Information of China (English)

    周素云; 袁孝; 刘明萍

    2012-01-01

    The laser-induced plasma wakefield in a capillary is investigated on the basis of a simple two-dimensional analytical model. It is shown that as an intense laser pulse reshaped by the capillary wall propagates in capillary plasma, it resonantly excites a strong wakefield if a suitable laser pulse width and capillary radius are chosen for a certain plasma density. The dependence of the laser width and capillary radius on the plasma density for resonance conditions is considered. The wakefield amplitude and longitudinal scale of bubbles in capillary plasma are much larger than those in unbounded plasma, so the capillary guided plasma wakefield is more favorable to electron acceleration.

  14. Further observations on resonance cones in non-Maxwellian plasmas

    Science.gov (United States)

    Thiemann, H.; Singh, N.

    1983-01-01

    Results on the angular distribution of the electrostatic potential of a pulsating point charge in a warm magnetized plasma permeated by an electron beam are presented. The theoretical formulation for a finite magnetic field is given, and the solution of the resonance cone dispersion relation is presented. Numerical results on the angular distribution of the potential are shown, and the propagation of waves outside the resonance cones is described. It is demonstrated that with the inclusions of a finite magnetic field, the field patterns of a point charge are qualitatively similar to those obtained for a uniaxial plasma. The Cerenkov radiation occurs at angles much smaller than the cold-cone angle, even with the finite magnetic field. When the beam velocity is well above the thermal velocity of the background electrons, a characteristic wave propagation occurs between the cold-cone angles.

  15. Temperature dependence of protection layer formation on organic trench sidewall in H2/N2 plasma etching with control of substrate temperature

    Science.gov (United States)

    Fukunaga, Yusuke; Tsutsumi, Takayoshi; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru

    2017-07-01

    For the etching of organic films in H2/N2 plasma, etched profiles are significantly determined by substrate temperature. Here, we control the substrate temperature variation within 3 °C during processing by modulating the plasma-discharge time. The evolution of the cross-sectional profile of line-and-space patterns was observed every 10 s. At 60 and 100 °C, sidewall etching was observed during overetching, but not at 20 °C. During the main etching, the sidewalls were protected by the adsorption of by-products at various temperatures. Moreover, we investigated the temperature dependence of protection layer formation by analyzing the surface components of the organic film. The CN layer formed by N radicals has a protective effect that depends on the components of the CN layer. It was found that the ratio of C-N sp3 to C-N sp2 in the sidewall was highest at 100 °C. By evaluating the radical contribution to CN layer formation, C-N sp3 bonds were observed to be formed by ions and radiation-assisted reaction.

  16. Resonance broadening modification of weak plasma turbulence theory

    Energy Technology Data Exchange (ETDEWEB)

    Hanssen, A. (Max-Planck-Inst. fuer Aeronomie, Katlenburg-Lindau (West Germany))

    1991-02-01

    The author examines the effects on energy spectra of weak Langmuir turbulence when he includes a nonlinear damping due to the perturbation of electron orbits. The physical mechanism under consideration is usually known as a resonance broadening effect. The calculations show that the inclusion of this additional damping reduces the number of cascades predicted from weak turbulence theory for waves detectable with the EISCAT UHF (933 MHz) radar in Tromso, Norway, during RF modification of the ionospheric plasma.

  17. C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films%C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films

    Institute of Scientific and Technical Information of China (English)

    袁颖; 叶超; 陈天; 葛水兵; 刘卉敏; 崔进; 徐轶君; 邓艳红; 宁兆元

    2012-01-01

    This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency (LF) power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

  18. Characteristics of surface sterilization using electron cyclotron resonance plasma

    Science.gov (United States)

    Yonesu, Akira; Hara, Kazufumi; Nishikawa, Tatsuya; Hayashi, Nobuya

    2016-07-01

    The characteristics of surface sterilization using electron cyclotron resonance (ECR) plasma were investigated. High-energy electrons and oxygen radicals were observed in the ECR zone using electric probe and optical emission spectroscopic methods. A biological indicator (BI), Geobacillus stearothermophilus, containing 1 × 106 spores was sterilized in 120 s by exposure to oxygen discharges while maintaining a temperature of approximately 55 °C at the BI installation position. Oxygen radicals and high-energy electrons were found to be the sterilizing species in the ECR region. It was demonstrated that the ECR plasma could be produced in narrow tubes with an inner diameter of 5 mm. Moreover, sterilization tests confirmed that the spores present inside the narrow tube were successfully inactivated by ECR plasma irradiation.

  19. Highly efficient metal-free growth of nitrogen-doped single-walled carbon nanotubes on plasma-etched substrates for oxygen reduction.

    Science.gov (United States)

    Yu, Dingshan; Zhang, Qiang; Dai, Liming

    2010-11-03

    We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.

  20. Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

    Science.gov (United States)

    Lee, Ho Ki; Baek, Kye Hyun; Shin, Kyoungsub

    2017-06-01

    As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R 2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three σ of CD across wafer is improved from the range (1.3-2.9 nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry.

  1. Dynamic etching of soluble surface layers with on-line inductively coupled plasma mass spectrometry detection - a novel approach for determination of complex metal oxide surface cation stoichiometry

    OpenAIRE

    Limbeck, A; Rupp, GM; M. Kubicek; Tellez, H.; Druce, J; Ishihara, T.; Kilner, JA; Fleig, J.

    2016-01-01

    In this work, an innovative approach for determining the surface stoichiometry of complex metal oxide (CMO) thin films is presented. The procedure is based on treatment of the sample surface with different etching solutions, followed by on-line analysis of the derived eluates using inductively coupled plasma ? mass spectrometry (ICP-MS). Via consecutive treatment of the sample surface with water and diluted HCl, a differentiation between water soluble and acid soluble parts of near surface re...

  2. Investigation of etching and deposition processes of Cl{sub 2}/O{sub 2}/Ar inductively coupled plasmas on silicon by means of plasma-surface simulations and experiments

    Energy Technology Data Exchange (ETDEWEB)

    Tinck, S; Bogaerts, A [Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Boullart, W, E-mail: stefan.tinck@ua.ac.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2009-05-07

    In this paper, a simulation method is described to predict the etching behaviour of Cl{sub 2}/O{sub 2}/Ar inductively coupled plasmas on a Si substrate, as used in shallow trench isolation for the production of electronic devices. The hybrid plasma equipment model (HPEM) developed by Kushner et al is applied to calculate the plasma characteristics in the reactor chamber and two additional Monte Carlo simulations are performed to predict the fluxes, angles and energy of the plasma species bombarding the Si substrate, as well as the resulting surface processes such as etching and deposition. The simulations are performed for a wide variety of operating conditions such as gas composition, chamber pressure, power deposition and substrate bias. It is predicted by the simulations that when the fraction of oxygen in the gas mixture is too high, the oxidation of the Si substrate is superior to the etching of Si by chlorine species, resulting in an etch rate close to zero as is also observed in the experiments.

  3. Electrode-selective deposition/etching processes using an SiF4/H2/Ar plasma chemistry excited by sawtooth tailored voltage waveforms

    Science.gov (United States)

    Wang, J. K.; Johnson, E. V.

    2017-01-01

    We report on the electrode-selective deposition and etching of hydrogenated silicon thin films using a plasma enhanced chemical vapour deposition process excited by sawtooth-shaped tailored voltage waveforms (TVWs). The slope asymmetry of such waveforms leads to a different rate of sheath expansion and contraction at each electrode, and therefore different electron power absorption near each electrode. This effect was employed with an SiF4/H2/Ar plasma chemistry, as the surface processes that result from this gas mixture depend strongly on the local balance between multiple precursors. For a specific gas flow ratio, a deposition rate of 0.82 Å s-1 on one electrode and an etching rate of 1.2 Å s-1 on the other were achieved. Moreover, this deposition/etching balance is controlled by the H2 flow rate, which limits the deposition rate at low flows. When the H2 injection is sufficiently high, the processes are then limited by the dissociation of SiF4, and the relative rate of the surface processes on the two electrodes are reversed, i.e. a higher net deposition rate is observed on the electrode where the fast sheath contraction occurs due to the electronegative character of the plasma.

  4. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applied...... beam etching in a boron trichloride plasma. The etch rates of sapphire in such a plasma can be up to a hundred times faster than rates in ion beam etching. The anisotropy of the etch can be controlled by changing the plasma conditions and fabrication of sloped sidewalls can be achieved. Reactive ion...... etching of polymers can be used for several purposes, such as polymer removal, surface properties alternation, or polymer structuring. For material removal any polymer can be etched in an oxygen plasma, including all the polymers used in this project, which include, SU-8, TOPAS®, PLLA, PCL, and PMMA...

  5. Investigation of H2/CH4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells

    Science.gov (United States)

    Wang, Li; Zhang, Xiaodan; Zhao, Ying; Yamada, Takuto; Naito, Yusuke

    2014-10-01

    A new plasma post-etching method, H2/CH4 mixed gas plasma, is introduced to modify ZnO:B films grown by LP-MOCVD technique, successfully relaxing the double trade-offs, i.e., transparency/conductivity trade-off and surface texture/Voc and FF trade-off. To deeply evaluate the post-etching process, optical emission spectroscopy technique is applied to diagnose the plasma condition. Upon different etching power, three distinct possible etching mechanisms are identified by analyzing the evolution of Hα*, Hβ*, CH* emission species in the plasma space. It is demonstrated that Hβ* and CH* species are responsible for the physical etching process and chemical etching process, respectively, from which a new “soft” surface morphology is formed with a combination of micro- and nano-sized texture. Additionally, Hα* species can bond with ZnO and also passivate the grains boundaries, thereby making both the carrier concentration and hall mobility increase. This process is defined as chemical bonding process. Finally, pin-type a-Si:H single-junction solar cells with an optimized device structure is grown on the etched ZnO:B substrate. The corresponding electrical parameters, such as Jsc, Voc and FF, are simultaneously improved compared with the solar cell deposited on as-grown ZnO:B substrate with the same fabrication process. As a consequence, a noteworthy 8.85% conversion-efficiency is achieved with an absorber layer thickness only 160 nm.

  6. 基于ICP工艺的垂直微小硅镜的加工%Fabrication of Micro Vertical Mirrors on Silicon Using Inductively Coupled Plasma (ICP) Etching

    Institute of Scientific and Technical Information of China (English)

    单学传; 前田龙太郎; 池原毅

    2005-01-01

    In silicon deep reactive ion etching (DRIE) using inductively coupled plasma (ICP) etcher,a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth. However, for a wide trench, the width of etched profile will increase with the increase of its depth since the deformation of boundary layer in plasma. Verticality of sidewalls of etched profiles on silicon will be a critical problem in many applications. In this paper, the fabrication of isolated vertical mirrors is reported. With the introduction of multi-steps recipes and optimization of source power, substrate bias power and process pressure, the deformation in the plasma boundary layer was minimized and the etched profiles were improved. As the results, micro vertical mirrors of 120 μm high with a perpendicularity of 89.7° and mirrors of 200 μm high with 89.3° were realized.%利用自感应耦合等离子(ICP)蚀刻机进行硅深层反应离子刻蚀,得到了几微米宽的狭槽,其轮廓通常为正锥形,即蚀刻槽的宽度随着蚀刻深度的增大而减小.然而,对一个宽槽来说,由于等离子区内边界层的变形,其蚀刻宽度会随着蚀刻深度的增加而增加.在许多应用中,硅蚀刻轮廓侧面的垂直状况是一个关键性问题.叙述了分离式垂直镜的加工过程;研究了影响蚀刻轮廓的各种重要参数.经过引入多步制法与优化激励源、基底偏压源及加工压力,减小了等离子区边界层内的变形,改善了轮廓的蚀刻状况.得到的结果为:120μm高垂直微镜垂直度为89.7°,200μm高垂直微镜垂直度为89.3°.

  7. Dynamics of resonant magnetic field penetration and plasma rotation

    Science.gov (United States)

    Ivanov, N. V.; Kakurin, A. M.

    2017-01-01

    Results of calculations and analysis of the penetration of resonant magnetic perturbations (RMP) into tokamak plasma are presented. The TEAR code used for the calculations is based on a two-fluid magnetohydrodynamics approximation that gives coupled diffusion-type equations for the magnetic flux perturbation and for plasma rotation velocities in toroidal and poloidal directions. The radial distribution of the magnetic flux perturbation is calculated taking account of an externally applied RMP and magnetic perturbation generated by an eddy current in the resistive-vacuum vessel. The decoupling of magnetic-island velocity from the velocity of plasma rotation is employed in the calculations according to available experimental evidence and corresponding theoretical understanding. The account of this decoupling, as well as of plasma rotation in the poloidal direction in addition to the toroidal one, reduces the RMP penetration threshold and accelerates the penetration process. The main attention is paid to the dependences of the RMP penetration dynamics on the simulation conditions. The simulation findings are compared with available experimental data. Some predictions of the penetration threshold values for ITER conditions are presented.

  8. Surface etching mechanism of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material in fluorocarbon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Lanlan [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China); Graduate School of the Chinese Academy of Sciences, Beijing (China); Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Wu, Liangcai; Liu, Bo; Feng, Songlin [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2016-09-15

    Recently, carbon-doped Ge2Sb2Te5 (CGST) phase change material has been widely researched for being highly promising material for future phase change memory application. In this paper, the reactive-ion etching of CGST film in CF{sub 4}/Ar plasma is studied. Compared with GST, the etch rate of CGST is relatively lower due to the existence of carbon which reduce the concentration of F or CF{sub x} reactive radicals. It was found that Argon plays an important role in defining the sidewall edge acuity. Compared with GST, more physical bombardment is required to obtain vertical sidewall of CGST. The effect of fluorocarbon gas on the damage of the etched CGST film was also investigated. A Ge- and Sb-deficient layer with tens of nanometers was observed by TEM combining with XPS analysis. The reaction between fluorocarbon plasma and CGST is mainly dominated by the diffusion and consumption of reactive fluorine radicals through the fluorocarbon layer into the CGST substrate material. The formation of damage layer is mainly caused by strong chemical reactivity, low volatility of reaction compounds and weak ion bombardment. (orig.)

  9. Automation of a mass flow controller for application in time-multiplex SF{sub 6}+CH{sub 4} plasma etching of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tezani, L.L.; Moraes, R.S.; Medeiros, H.S.; Petraconi Filho, G.; Massi, M.; Silva Sobrinho, A.S. da [Laboratorio de Plasmas e Processos, Instituto Tecnologico de Aeronautica, 12228-900, Sao Jose dos Campos-SP (Brazil); Pessoa, R.S.; Maciel, H.S. [Laboratorio de Plasmas e Processos, Instituto Tecnologico de Aeronautica, 12228-900, Sao Jose dos Campos-SP (Brazil); IP and D, Universidade do Vale do Paraiba, 12244-000, Sao Jose dos Campos-SP (Brazil); Martins, C.A. [Laboratorio de Combustao, Propulsao e Energia, Instituto Tecnologico de Aeronautica, 12228-900, Sao Jos dos Campos-SP (Brazil)

    2012-10-15

    In this work is proposed the automation of a gas injection (mass flow) system in order to generate timemultiplex SF{sub 6}/CH{sub 4} radiofrequency plasma applied for silicon (Si) etching process. The control of the gas injection system is important in order to better control the process anisotropy, i.e., the high-aspect-ratio of mask pattern transfer to substrate surface. In other words, this control allows the attainment of deep Si etching process. Here, the automation of the gas injection system was realized through the interface between a computer and a data acquisition board. The automation software developed allows controlling the gas flow rate switching it on and off during whole process through the use of a square waveform routine, intermittent flow, beyond the conventional condition of a fixed value for gas flow rate, continuous flow. In order to investigate the time-multiplex SF{sub 6}/CH{sub 4} plasma etching of Si, the residual gas analysis was performed. The investigations were made keeping the following process parameters: flow of SF{sub 6}: 10 sccm, flow of CH{sub 4}: 6 sccm, 100 W rf power, wave period: 20 sec. It were monitored the partial pressure of SF{sup +} {sub 5} (parent neutral specie: SF{sub 6}), CH{sup +}{sub 4} (CH4) and SiF+{sub 3} (SiF4) species as a function of time for different gas flow switching and duty cycle. The results showed that with the generation of plasma occurs a drastic change in behavior of partial pressures of SF{sup +} {sub 5} and CH{sup +}{sub 4} species. Moreover, it is evidenced that the interactions between the SF{sub 6} and CH{sub 4} fragments promotes a high production rate of HF molecule and consequently a decrease of atomic fluorine, mainly when plasma is on. Finally, the behavior of partial pressure of SiF{sup +} {sub 3} specie for alternatively intermittent SF{sub 6} and CH{sub 4} flow operation shows us that both the etching processes and the deposition of a polymer passivation layer are occurring

  10. Effect of a non-thermal, atmospheric-pressure, plasma brush on conversion of model self-etch adhesive formulations compared to conventional photo-polymerization

    Science.gov (United States)

    Chen, Mingsheng; Zhang, Ying; Yao, Xiaomei; Li, Hao; Yu, Qingsong; Wang, Yong

    2012-01-01

    Objective To determine the effectiveness and efficiency of non-thermal, atmospheric plasmas for inducing polymerization of model dental self-etch adhesives. Methods The monomer mixtures used were bis-[2-(methacryloyloxy)ethyl] phosphate (2MP) and 2-hydroxyethyl methacrylate (HEMA), with mass ratios of 70/30, 50/50 and 30/70. Water was added to the above formulations: 10–30 wt%. These monomer/water mixtures were treated steadily for 40 s under a non-thermal atmospheric plasma brush working at temperatures from 32° to 35°C. For comparison, photo-initiators were added to the above formulations for photo-polymerization studies, which were light-cured for 40 s. The degree of conversion (DC) of both the plasma- and light-cured samples was measured using FTIR spectroscopy with an attenuated total reflectance attachment. Results The non-thermal plasma brush was effective in inducing polymerization of the model self-etch adhesives. The presence of water did not negatively affect the DC of plasma-cured samples. Indeed, DC values slightly increased, with increasing water content in adhesives: from 58.3% to 68.7% when the water content increased from 10% to 30% in the adhesives with a 50/50 (2MP/HEMA) mass ratio. Conversion values of the plasma-cured groups were higher than those of light-cured samples with the same mass ratio and water content. Spectral differences between the plasma- and light-cured groups indicate subtle structural distinctions in the resultant polymer networks. Significance This research if the first to demonstrate that the non-thermal plasma brush induces polymerization of model adhesives under clinical settings by direct/indirect energy transfer. This device shows promise for polymerization of dental composite restorations having enhanced properties and performance. PMID:23018084

  11. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  12. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  13. Characterization of plasma-enhanced teflon AF for sensing benzene, toluene, and xylenes in water with near-IR surface plasmon resonance.

    Science.gov (United States)

    Erickson, Tim A; Nijjar, Rajvir; Kipper, Matt J; Lear, Kevin L

    2014-02-01

    Near-IR surface plasmon resonance is used to characterize Teflon AF films for refractive index-based detection of the aromatic hydrocarbon contaminants benzene, toluene, and xylenes in water. The technique requires no sample preparation, and film sensitivity is found to be enhanced by oxygen plasma etching. A diffusion equation model is used to extract the diffusion and partition coefficients, which indicate film enrichment factors exceeding two orders of magnitude, permitting a limit of detection of 183, 105 and 55 ppb for benzene, toluene, and xylenes, respectively. The effect of other potential interfering contaminants is quantified.

  14. Temperature and density evolution during decay in a 2.45 GHz hydrogen electron cyclotron resonance plasma: Off-resonant and resonant cases

    Energy Technology Data Exchange (ETDEWEB)

    Cortázar, O. D. [ESS Bilbao, Edificio Cosimet, Landabarri 2, 48940-Leioa, Vizcaya (Spain); Universidad de Castilla-La Mancha, ETSII, C.J. Cela s/n, 13170 Ciudad Real (Spain); Megía-Macías, A.; Vizcaíno-de-Julián, A. [ESS Bilbao, Edificio Cosimet, Landabarri 2, 48940-Leioa, Vizcaya (Spain)

    2013-09-15

    Time resolved electron temperature and density measurements during the decay stage in a hydrogen electron cyclotron resonance (ECR) plasma are presented for a resonance and off-resonance magnetic field configurations. The measurements are conducted on a ECR plasma generator excited at 2.45 GHz denominated test-bench for ion-sources plasma studies at ESS Bilbao. The plasma parameters evolution is studied by Langmuir probe diagnostic with synchronized sample technique developed for repetitive pulsed plasmas with a temporal resolution of 200 ns in typical decay processes of about 40 μs. An afterglow transient is clearly observed in the reflected microwave power signal from the plasma. Simultaneously, the electron temperature evolution shows rebounding peaks that may be related to the interplay between density drop and microwave coupling with deep impact on the Electron Energy Distribution Function. The correlation of such structures with the plasma absorbed power and the coupling quality is also reported.

  15. Highly roughened polycaprolactone surfaces using oxygen plasma-etching and in vitro mineralization for bone tissue regeneration: fabrication, characterization, and cellular activities.

    Science.gov (United States)

    Kim, YongBok; Kim, GeunHyung

    2015-01-01

    Herein, poly(ɛ-caprolactone) (PCL) surfaces were treated to form various roughness values (R(a)=290-445 nm) and polar functional groups on the surfaces using a plasma-etching process, followed by immersion into simulated body fluid (SBF) for apatite formation. The surface morphology, chemical composition, and mean roughness of the plasma-etched PCL surfaces were measured, and various physical and morphological properties (water contact angles, protein absorption ability, and crystallite size of the apatite layer) of the in vitro mineralized PCL surfaces were evaluated. The roughened PCL surface P-3, which was treated with a sufficient plasma exposure time (4 h), achieved homogeneously distributed apatite formation after soaking in SBF for 7 days, as compared with other surfaces that were untreated or plasma-treated for 30 min or 2 h. Furthermore, to demonstrate their feasibility as a biomimetic surface, pre-osteoblast cells (MC3T3-E1) were cultured on the mineralized PCL surfaces, and cell viability, DAPI-phalloidin fluorescence assay, and alizarin red-staining of the P-3 surface were highly improved compared to the P-1 surface treated with a 30-min plasma exposure time; compared to untreated mineralized PCL surface (N-P), P-3 showed even greater improvements in cell viability and DAPI-phalloidin fluorescence assay. Based on these results, we found that the mineralized PCL surface supplemented with the appropriate plasma treatment can be implicitly helpful to achieve rapid hard tissue regeneration. Copyright © 2014 Elsevier B.V. All rights reserved.

  16. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    Science.gov (United States)

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively.

  17. Generation of Optical Vortex Using a Spiral Phase Plate Fabricated in Quartz by Direct Laser Writing and Inductively Coupled Plasma Etching

    Institute of Scientific and Technical Information of China (English)

    CHEN Jun; KUANG Deng-Feng; GUI Min; FANG Zhi-Liang

    2009-01-01

    A simple, economical and reliable technique is proposed for fabricating a spiral phase plate (SPP) in a quartz substrate to generate optical vortex with a unit topological charge at the wavelengths of 632.8nm. The spiral phase plate is first formed in the photoresist by direct laser writing lithography and then transferred into the quartz substrate by inductively coupled plasma etching. The performance of the fabricated SPP is verified by using beam intensity distribution, which is in agreement with the theoretical calculation result. The interference measurement suggests that we have succeeded to generate opticM vortex with a unit topological charge with the fabricated SPP.

  18. Adaptive optical design in surface plasma resonance sensor

    Institute of Scientific and Technical Information of China (English)

    ZHANG Feng; ZHONG Jin-gang

    2006-01-01

    A double-prism adaptive optical design in surface plasma resonance (SPR) sensor is proposed,which consists of two identical isosceles right-triangular prisms. One prism is used as a component of Kretschmann configuration,and the other is for regulation of the optical path. When double-prism structure is angle-scanned by an immovable incident ray,the output ray will be always parallel with the incident ray and just has a small displacement with the shift of output point.The output ray can be focused on a fixed photodetector by a convex lens.Thus it can be avoided that a prism and a photodetector rotate by θ and 2θ respectively in conventional angular scanning SPR sensor.This new design reduces the number of the movable components,makes the structure simple and compact,and makes the manipulation convenient.

  19. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    Science.gov (United States)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  20. Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 (United States); George, Steven M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado at Boulder, Colorado 80309 and Department of Mechanical Engineering, University of Colorado at Boulder, Colorado 80309 (United States)

    2016-09-15

    Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){sub 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.

  1. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Kawakami, Masatoshi [Electronic Device Systems Business Group, Hitachi High-Technologies Corporation, 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-0002 (Japan); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Material Science and Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Li, Chen [Department of Physics, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)

    2016-07-15

    The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.

  2. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    Science.gov (United States)

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms.

  3. Sound waves and resonances in electron-hole plasma

    Science.gov (United States)

    Lucas, Andrew

    2016-06-01

    Inspired by the recent experimental signatures of relativistic hydrodynamics in graphene, we investigate theoretically the behavior of hydrodynamic sound modes in such quasirelativistic fluids near charge neutrality, within linear response. Locally driving an electron fluid at a resonant frequency to such a sound mode can lead to large increases in the electrical response at the edges of the sample, a signature, which cannot be explained using diffusive models of transport. We discuss the robustness of this signal to various effects, including electron-acoustic phonon coupling, disorder, and long-range Coulomb interactions. These long-range interactions convert the sound mode into a collective plasmonic mode at low frequencies unless the fluid is charge neutral. At the smallest frequencies, the response in a disordered fluid is quantitatively what is predicted by a "momentum relaxation time" approximation. However, this approximation fails at higher frequencies (which can be parametrically small), where the classical localization of sound waves cannot be neglected. Experimental observation of such resonances is a clear signature of relativistic hydrodynamics, and provides an upper bound on the viscosity of the electron-hole plasma.

  4. TREATMENT OF METALS, POLYMER FILMS, AND FABRICS WITH A ONE ATMOSPHERE UNIFORM GLOW DISCHARGE PLASMA (OAUGDP) FOR INCREASED SURFACE ENERGY AND DIRECTIONAL ETCHING

    Institute of Scientific and Technical Information of China (English)

    J. Reece Roth; Z.Y. Chen; Peter P.- Y. Tsai

    2001-01-01

    Direct exposure of samples to the active species of air generated by a One AtmosphereUniform Glow Discharge Plasma (OA UGDP) has been used to etch and to increasethe surface energy of metallic surfaces, photoresist, polymer films, and nonwoven fab-rics. The OAUGDP is a non-thermal plasma with the classical characteristics of aDC normal glow discharge that operates in air (and other gases) at atmospheric pres-sure. Neither a vacuum system nor batch processing is necessary. A wide range ofapplications to metals, photoresist, films, fabrics, and polymeric webs can be accom-modated by direct exposure of the workpiece to the plasma in parallel-plate reactors.This technology is simple, it produces effects that can be obtained in no other way atone atmosphere; it generates minimal pollutants or unwanted by-products; and it issuitable for individual sample or online treatment of metallic surfaces, wafers, films.and fabrics.``Early exposures of solid materials to the OA UGDP required minutes to produce rela-tively small increases of surface energy. These durations appeared too long for com-mercial application to fast-moving webs. Recent improvements in OA UGDP gas com-position, power density, plasma quality, recirculating gas flow, and impedance match-ing of the power supply to the parallel plate plasma reactor have made it possible toraise the surface energy ofa variety of polymeric webs (PP, PET, PE, etc.) to levels of60 to 70 dynes/crn with one second of exposure. In air plasmas, the high surface ener-gies are not durable, and fall to 50 dynes/em after periods of weeks to months. Here.we report the exposure of metallic surfaces, photoresist, polymeric films, and nonwo-ven fabrics made of PP and PET to an impedance matched parallel plate OA UGDPfor durations ranging from one second to several tens of seconds. Data will be re-ported on the surface energy, wettability, wickability, and aging effect of polymericfilms and fabrics as functions of time of exposure, and time

  5. Particle-in-cell investigation on the resonant absorption of a plasma surface wave

    Institute of Scientific and Technical Information of China (English)

    Lan Chao-Hui; Hu Xi-Wei

    2011-01-01

    The resonant absorption of a plasma surface wave is supposed to be an important and efficient mechanism of power deposition for a surface wave plasma source.In this paper,by using the particle-in-cell method and Monte Carlo simulation,the resonance absorption mechanism is investigated.Simulation results demonstrate the existence of surface wave resonance and show the high efficiency of heating electrons.The positions of resonant points,the resonance width and the spatio-temporal evolution of the resonant electric field are presented,which accord well with the theoretical results.The paper also discusses the effect of pressure on the resonance electric field and the plasma density.

  6. Vacuum pump age effects by the exposure to the corrosive gases on the Cr etch rate as observed using optical emission spectroscopy in an Ar/O{sub 2}/Cl{sub 2} mixed plasma

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seolhye; Roh, Hyun-Joon; Jang, Yunchang; Jeong, Sangmin; Ryu, Sangwon; Choe, Jae-Myung; Kim, Gon-Ho, E-mail: ghkim@snu.ac.kr

    2016-03-31

    Vacuum pumps of different ages were used to prepare Cl{sub 2} based plasmas for use in Cr etching. The effects of the vacuum pump age on the etching results were investigated using optical emission spectroscopy analysis. The composition of gas at the base pressure was mainly nitrogen and oxygen, although the ratio depended on the vacuum pump age and therefore, modulated the etch rate in a manner that was difficult to monitor. The effects of the pump age on the etch rate were clearly observed in the Cl{sub 2} plasma-assisted chromium film etching process, in which oxygen and chlorine radicals were responsible for the etching process. The electron energy distribution function (EEDF), which provided a proxy for the thermal equilibrium properties of the etching plasmas, was monitored. The shape of EEDF was derived from an analysis of the optical emission spectral data using an analysis model described previously. Because molecular nitrogen has a higher threshold energy and a larger cross-section of inelastic collisional processes than oxygen, the tail of the EEDF depends on the mixing ratio between nitrogen and oxygen. The various mechanisms that contribute to the chromium etch rate varied with subtle differences in the vacuum conditions, which were determined by age of the turbo molecular pump. The rates at which oxygen and chlorine radicals were generated were estimated using the measured EEDF, and the estimated oxygen radical and etching product contents were verified by comparing the residual gas analyzer data. The results revealed that the residual nitrogen partial pressures in two etchers equipped with either a new or an aged pump differed by 0.18%, and the EEDF tail areas differed by 10{sup −4}. Importantly, the chromium etch rates in these two instruments differed by 30%. These results suggest that the chamber-to-chamber mismatch should be monitored during plasma-assisted device fabrication processes. - Highlights: • We observed the vacuum pump age effect

  7. Features of electromagnetic waves in a complex plasma due to surface plasmon resonances on macroparticles

    CERN Document Server

    Vladimirov, S V

    2015-01-01

    The dielectric properties of complex plasma containing either metal or dielectric spherical inclusions (macroparticles, dust) are investigated. We focus on surface plasmon resonances on the macroparticle surfaces and their effect on electromagnetic wave propagation. It is demonstrated that the presence of surface plasmon oscillations significantly modifies plasma electromagnetic properties by resonances and cutoffs in the effective permittivity. This leads to related branches of electromagnetic waves and to the wave band gaps. The results are discussed in the context of dusty plasma experiments.

  8. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States); Blom, Hans-Olof [Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden)

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  9. Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

    Science.gov (United States)

    2015-03-26

    testing. 62 IV. Results and Analysis Chapter Overview In the previous chapter, the process for fabricating and testing ZnO TFTs in this thesis was...this thesis . ............................................................................................. 16 Figure 7: SEM image and small...a subtractive back-etch process for patterning ohmic films on ZnO. 39 Figure 15: Series of drawings and SEM images detailing a typical bi-layer lift

  10. Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio.

    Science.gov (United States)

    Son, Jinyoung; Efremov, Alexander; Yun, Sun Jin; Yeom, Geun Young; Kwonl, Kwang-ho

    2014-12-01

    Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25-75% O2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mTorr), input power (900 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters were analyzed using the Langmuir probe diagnostics and optical emission spectroscopy. The chemical states of the etched surfaces were examined by the X-ray photoelectron spectroscopy. It was found that the non-monotonic (with a maximum at about 50-60% O2) SiN(x) etching rate does not correlate with monotonically decreasing F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the SiN(x) etching process is also controlled by the O and H atom fluxes through the destruction of the fluorocarbon polymer layer.

  11. Resonant Alfven waves in partially ionized plasmas of the solar atmosphere

    CERN Document Server

    Soler, R; Goossens, M

    2011-01-01

    Context. Magnetohydrodynamic (MHD) waves are ubiquitous in the solar atmosphere. In magnetic waveguides resonant absorption due to plasma inhomogeneity naturally transfers wave energy from large-scale motions to small-scale motions. In the cooler parts of the solar atmosphere as, e.g., the chromosphere, effects due to partial ionization may be relevant for wave dynamics and heating. Aims. We study resonant Alfven waves in partially ionized plasmas. Methods. We use the multifluid equations in the cold plasma approximation. We investigate propagating resonant MHD waves in partially ionized flux tubes. We use approximate analytical theory based on normal modes in the thin tube and thin boundary approximations along with numerical eigenvalue computations. Results. We find that the jumps of the wave perturbations across the resonant layer are the same as in fully ionized plasmas. The damping length due to resonant absorption is inversely proportional to the frequency, while that due to ion-neutral collisions is in...

  12. Towards higher stability of resonant absorption measurements in pulsed plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Britun, Nikolay, E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Michiels, Matthieu [Materia Nova Research Center, Parc Initialis, B-7000 Mons (Belgium); Snyders, Rony [Chimie des Interactions Plasma Surface (ChIPS), CIRMAP, Université de Mons, 23 Place du Parc, B-7000 Mons (Belgium); Materia Nova Research Center, Parc Initialis, B-7000 Mons (Belgium)

    2015-12-15

    Possible ways to increase the reliability of time-resolved particle density measurements in pulsed gaseous discharges using resonant absorption spectroscopy are proposed. A special synchronization, called “dynamic source triggering,” between a gated detector and two pulsed discharges, one representing the discharge of interest and another being used as a reference source, is developed. An internal digital delay generator in the intensified charge coupled device camera, used at the same time as a detector, is utilized for this purpose. According to the proposed scheme, the light pulses from the reference source follow the gates of detector, passing through the discharge of interest only when necessary. This allows for the utilization of short-pulse plasmas as reference sources, which is critical for time-resolved absorption analysis of strongly emitting pulsed discharges. In addition to dynamic source triggering, the reliability of absorption measurements can be further increased using simultaneous detection of spectra relevant for absorption method, which is also demonstrated in this work. The proposed methods are illustrated by the time-resolved measurements of the metal atom density in a high-power impulse magnetron sputtering (HiPIMS) discharge, using either a hollow cathode lamp or another HiPIMS discharge as a pulsed reference source.

  13. Environmental photostability of SF6-etched silicon nanocrystals

    Science.gov (United States)

    Liptak, R. W.; Yang, J.; Kramer, N. J.; Kortshagen, U.; Campbell, S. A.

    2012-10-01

    We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF6) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF6-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF6-etched SiNCs up to 160 °C. The observed thermal and UV stability of SF6-etched SiNCs combined with their PL quantum yields of up to ˜50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF6-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.

  14. Influence of microwave driver coupling design on plasma density at Testbench for Ion sources Plasma Studies, a 2.45 GHz Electron Cyclotron Resonance Plasma Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Megía-Macías, A.; Vizcaíno-de-Julián, A. [E.S.S. Bilbao, Edificio Cosimet, Landabarri 2, 48940-Leioa, Vizcaya (Spain); Cortázar, O. D., E-mail: dcortazar@essbilbao.org [E.S.S. Bilbao, Edificio Cosimet, Landabarri 2, 48940-Leioa, Vizcaya (Spain); Universidad de Castilla-La Mancha, ETSII, C.J. Cela s/n, 13170 Ciudad Real (Spain)

    2014-03-15

    A comparative study of two microwave driver systems (preliminary and optimized) for a 2.45 GHz hydrogen Electron Cyclotron Resonance plasma generator has been conducted. The influence on plasma behavior and parameters of stationary electric field distribution in vacuum, i.e., just before breakdown, along all the microwave excitation system is analyzed. 3D simulations of resonant stationary electric field distributions, 2D simulations of external magnetic field mapping, experimental measurements of incoming and reflected power, and electron temperature and density along the plasma chamber axis have been carried out. By using these tools, an optimized set of plasma chamber and microwave coupler has been designed paying special attention to the optimization of stationary electric field value in the center of the plasma chamber. This system shows a strong stability on plasma behavior allowing a wider range of operational parameters and even sustaining low density plasma formation without external magnetic field. In addition, the optimized system shows the capability to produce values of plasma density four times higher than the preliminary as a consequence of a deeper penetration of the magnetic resonance surface in relative high electric field zone by keeping plasma stability. The increment of the amount of resonance surface embedded in the plasma under high electric field is suggested as a key factor.

  15. Active Plasma Resonance Spectroscopy: Evaluation of a fluiddynamic-model of the planar multipole resonance probe using functional analytic methods

    Science.gov (United States)

    Friedrichs, Michael; Brinkmann, Ralf Peter; Oberrath, Jens

    2016-09-01

    Measuring plasma parameters, e.g. electron density and electron temperature, is an important procedure to verify the stability and behavior of a plasma process. For this purpose the multipole resonance probe (MRP) represents a satisfying solution to measure the electron density. However the influence of the probe on the plasma through its physical presence makes it unattractive for some processes in industrial application. A solution to combine the benefits of the spherical MRP with the ability to integrate the probe into the plasma reactor is introduced by the planar model of the MRP. By coupling the model of the cold plasma with the maxwell equations for electrostatics an analytical model for the admittance of the plasma is derivated, adjusted to cylindrical geometry and solved analytically for the planar MRP using functional analytic methods.

  16. Biomechanical evaluation of laser-etched Ti implant surfaces vs. chemically modified SLA Ti implant surfaces: Removal torque and resonance frequency analysis in rabbit tibias.

    Science.gov (United States)

    Lee, Jung-Tae; Cho, Sung-Am

    2016-08-01

    To compare osseointegration and implant stability of two types of laser-etched (LE) Ti implants with a chemically-modified, sandblasted, large-grit and acid-etched (SLA) Ti implant (SLActive(®), Straumann, Basel, Switzerland), by evaluating removal torque and resonance frequency between the implant surface and rabbit tibia bones. We used conventional LE Ti implants (conventional LE implant, CSM implant, Daegu, Korea) and LE Ti implants that had been chemically activated with 0.9% NaCl solution (LE active implant) for comparison with SLActive(®) implants Two types of 3.3×8mm laser-etched Ti implants - conventional LE implants and LE active implants were prepared. LE implants and SLActive(®) implants were installed on the left and right tibias of 10 adult rabbits weighing approximately 3.0kg LE active implants and SLActive(®) implants were installed on the left and right tibias of 11 adult rabbits. After installation, we measured insertion torque (ITQ) and resonance frequency (ISQ). Three weeks (LE active) or 4 weeks (conventional LE) after installation, we measured removal torque (RTQ) and ISQ. In the conventional LE experiment, the mean ITQ was 16.99±6.35Ncm for conventional LE implants and 16.11±7.36Ncm for SLActive(®) implants (p=0.778>0.05). After 4 weeks, the mean of RTQ was 39.49±17.3Ncm for LE and 42.27±20.5Ncm for SLActive(®) (p=0.747>0.05). Right after insertion of the implants, the mean ISQ was 74.8±4.98 for conventional LE and 70.1±9.15 for SLActive(®) implants (p=0.169>0.05). After 4 weeks, the mean ISQ was 64.40±6.95 for LE and 67.70±9.83 for SLActive(®) (p=0.397>0.05). In the LE active experiment, the mean ITQ was 16.24±7.49Ncm for LE active implants and 14.33±5.06Ncm for SLActive(®) implants (p=0.491>0.05). After 3 weeks, the mean RTQ was 39.25±16.41Ncm for LE active and 41.56±10.41Ncm for SLActive(®) implants (p=0.698>0.05). Right after insertion of the implants, the mean ISQ was 58.64±10.51 for LE active implants and 53.82

  17. Microwave power coupling with electron cyclotron resonance plasma using Langmuir probe

    Indian Academy of Sciences (India)

    S K Jain; V K Senecha; P A Naik; P R Hannurkar; S C Joshi

    2013-07-01

    Electron cyclotron resonance (ECR) plasma was produced at 2.45 GHz using 200 – 750 W microwave power. The plasma was produced from argon gas at a pressure of 2 × 10−4 mbar. Three water-cooled solenoid coils were used to satisfy the ECR resonant conditions inside the plasma chamber. The basic parameters of plasma, such as electron density, electron temperature, floating potential, and plasma potential, were evaluated using the current–voltage curve using a Langmuir probe. The effect of microwave power coupling to the plasma was studied by varying the microwave power. It was observed that the optimum coupling to the plasma was obtained for ∼ 600 W microwave power with an average electron density of ∼ 6 × 1011 cm−3 and average electron temperature of ∼ 9 eV.

  18. Fundamental ion cyclotron resonance heating of JET deuterium plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Krasilnikov, A. V. [Troitsk Institute of Nuclear Physics (TRINITI), Russia; Van Eester, D. [Laboratory for Plasma Physics-ERM/KMS (LPP-ERM/KMS), Brussels, Belgium; Lerche, E. [Laboratory for Plasma Physics-ERM/KMS (LPP-ERM/KMS), Brussels, Belgium; Ongena, J. [Laboratory for Plasma Physics-ERM/KMS (LPP-ERM/KMS), Brussels, Belgium; Amosov, V. N. [Troitsk Institute of Nuclear Physics (TRINITI), Russia; Biewer, Theodore M [ORNL; Bonheure, G. [Laboratory for Plasma Physics-ERM/KMS (LPP-ERM/KMS), Brussels, Belgium; Crombe, K. [Ghent University, Belgium; Ericsson, G. [Uppsala University, Uppsala, Sweden; Esposito, Basilio [ENEA, Frascati; Giacomelli, L. [Uppsala University, Uppsala, Sweden; Hellesen, C. [Uppsala University, Uppsala, Sweden; Hjalmarsson, A. [Uppsala University, Uppsala, Sweden; Jachmich, S. [EURATOM / UKAEA, UK; Kallne, J. [Uppsala University, Uppsala, Sweden; Kaschuck, Yu A [Troitsk Institute of Nuclear Physics (TRINITI), Russia; Kiptily, V. [EURATOM / UKAEA, UK; Leggate, H. [EURATOM / UKAEA, UK; Mailloux, J. [EURATOM / UKAEA, UK; Marocco, D. [ENEA, Frascati; Mayoral, M.-L. [EURATOM / UKAEA, UK; Popovichev, S. [EURATOM / UKAEA, UK; Riva, M. [ENEA, Frascati; Santala, M. [EURATOM / UKAEA, UK; Stamp, M. F. [EURATOM / UKAEA, UK; Vdovin, V. [Russian Research Center, Kurchatov Institute, Moscow, Russia; Walden, A. [EURATOM / UKAEA, UK

    2009-03-01

    Radio frequency heating of majority ions is of prime importance for understanding the basic role of auxiliary heating in the activated D T phase of ITER. Majority deuterium ion cyclotron resonance heating (ICRH) experiments at the fundamental cyclotron frequency were performed in JET. In spite of the poor antenna coupling at 25 MHz, this heating scheme proved promising when adopted in combination with D neutral beam injection (NBI). The effect of fundamental ICRH of a D population was clearly demonstrated in these experiments: by adding ~25% of heating power the fusion power was increased up to 30 50%, depending on the type of NBI adopted. At this power level, the ion and electron temperatures increased from Ti ~ 4.0 keV and Te ~ 4.5 keV (NBI-only phase) to Ti ~ 5.5 keV and Te ~ 5.2 keV (ICRH + NBI phase), respectively. The increase in the neutron yield was stronger when 80 keV rather than 130 keV deuterons were injected in the plasma. It is shown that the neutron rate, the diamagnetic energy and the electron as well as the ion temperature scale roughly linearly with the applied RF power. A synergistic effect of the combined use of ICRF and NBI heating was observed: (i) the number of neutron counts measured by the neutron camera during the combined ICRF + NBI phases of the discharges exceeded the sum of the individual counts of the NBI-only and ICRF-only phases; (ii) a substantial increase in the number of slowing-down beam ions was detected by the time of flight neutron spectrometer when ICRF power was switched on; (iii) a small D subpopulation with energies slightly above the NBI launch energy was detected by the neutral particle analyzer and -ray spectroscopy.

  19. Two-resonance probe for measuring electron density in low-pressure plasmas

    Science.gov (United States)

    Kim, D. W.; You, S. J.; Kim, S. J.; Kim, J. H.; Oh, W. Y.

    2017-04-01

    A technique for measuring double-checked electron density using two types of microwave resonance is presented. Simultaneous measurement of the resonances (plasma and quarter-wavelength resonator resonances), which were used for the cutoff probe (CP) and hairpin probe (HP), was achieved by the proposed microwave resonance probe. The developed two-resonance probe (TRP) consists of parallel separated coaxial cables exposing the radiation and detection tips. The structure resembles that of the CP, except the gapped coaxial cables operate not only as a microwave feeder for the CP but also as a U- shaped quarter-wavelength resonator for the HP. By virtue of this structure, the microwave resonances that have typically been used for measuring the electron density for the CP and HP were clearly identified on the microwave transmission spectrum of the TRP. The two types of resonances were measured experimentally under various power and pressure conditions for the plasma. A three-dimensional full-wave simulation model for the TRP is also presented and used to investigate and reproduce the resonances. The electron densities inferred from the resonances were compared and showed good agreement. Quantitative differences between the densities were attributed to the effects of the sheath width and spatial density gradient on the resonances. This accessible technique of using the TRP to obtain double-checked electron densities may be useful for comparative study and provides complementary uses for the CP and HP.

  20. Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

    Science.gov (United States)

    Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

    2017-10-01

    Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

  1. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  2. Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials.

    Science.gov (United States)

    Varghese, Abin; Sharma, Chithra H; Thalakulam, Madhu

    2017-03-17

    A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology, is of paramount importance in realizing all-two-dimensional logic circuits and to move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS2 and other vW materials. Using this technique we etch MoS2 flakes layer-by-layer starting from an arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as graphene, h-BN and WSe2. In addition, using microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme making this process a potential candidate for large scale device fabrication in addition to layer engineering.

  3. In vitro study of 3D PLGA/n-HAp/β-TCP composite scaffolds with etched oxygen plasma surface modification in bone tissue engineering

    Science.gov (United States)

    Roh, Hee-Sang; Jung, Sang-Chul; Kook, Min-Suk; Kim, Byung-Hoon

    2016-12-01

    Three-dimensional (3D) scaffolds have many advantageous properties for bone tissue engineering application, due to its controllable properties such as pore size, structural shape and interconnectivity. In this study, effects on oxygen plasma surface modification and adding of nano-hydroxyapatite (n-HAp) and β-tricalcium phosphate (β-TCP) on the 3D PLGA/n-HAp/β-TCP scaffolds for improving preosteoblast cell (MC3T3-E1) adhesion, proliferation and differentiation were investigated. The 3D PLGA/n-HAp/β-TCP scaffolds were fabricated by 3D Bio-Extruder equipment. The 3D scaffolds were prepared with 0°/90° architecture and pore size of approximately 300 μm. In addition 3D scaffolds surface were etched by oxygen plasma to enhance the hydrophilic property and surface roughness. After oxygen plasma treatment, the surface chemistry and morphology were investigated by Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. And also hydrophilic property was measured by contact angle. The MC3T3-E1 cell proliferation and differentiation were investigated by MTT assay and ALP activity. In present work, the 3D PLGA/HAp/beta-TCP composite scaffold with suitable structure for the growth of osteoblast cells was successfully fabricated by 3D rapid prototyping technique. The surface hydrophilicity and roughness of 3D scaffold increased by oxygen plasma treatment had a positive effect on cell adhesion, proliferation, and differentiation. Furthermore, the differentiation of MC3T3-E1 cell was significantly enhanced by adding of n-HAp and β-TCP on 3D PLGA scaffold. As a result, combination of bioceramics and oxygen plasma treatment showed a synergistic effect on biocompatibility of 3D scaffolds. This result confirms that this technique was useful tool for improving the biocompatibility in bone tissue engineering application.

  4. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    NARCIS (Netherlands)

    Roozeboom, F.; Kniknie, B.J.; Lankhorst, A.M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.W.G.; Dingemans, G.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In

  5. 2D PIC modeling of the EUV induced hydrogen plasma and comparison to the observed carbon etching rate

    NARCIS (Netherlands)

    Astakhov, Dmitry; Goedheer, W.J.; Lopaev, D.; Ivanov, V.; Krivtsun, V.M.; Yakushev, O.; Koshelev, K.; Bijkerk, Frederik

    2013-01-01

    The interaction between an EUV driven hydrogen plasma and a carbon covered surface was investigated using 2D PIC modeling and results were compared with experimental observations. The plasma is formed due to ionization of a low pressure hydrogen gas by the EUV photons and the photoelectrons from the

  6. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Directory of Open Access Journals (Sweden)

    Juang Jenh-Yih

    2010-01-01

    Full Text Available Abstract A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE on SiGe thin films grown on (100-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  7. The role of plasma-surface interactions in process chemistry: Mechanistic studies of a-carbon nitride deposition and sulfur fluoride/oxygen etching of silicon

    Science.gov (United States)

    Stillahn, Joshua M.

    The molecular level chemistry of a-CNx deposition in plasma discharges was studied with emphasis on the use of CH 3CN and BrCN as single source precursors for these films. Characterization of the global deposition behavior in these systems indicates that the resulting films are relatively smooth and contain significant levels of N-content, with N/C > 0.3. Notably, films obtained from BrCN plasmas are observed to delaminate upon their exposure to atmosphere, and preliminary investigation of this behavior is presented. Detailed chemical investigation of the deposition process focuses primarily on the contributions of CN radicals, which were characterized from their origin in the gas phase to their reaction at the a-CNx film surface. Laser-induced fluorescence studies suggest that CN is formed through electron impact dissociation of the precursor species and that this breakdown process produces CN with high internal energies, having rotational and vibrational temperatures on the order of 1000 K and 5000 K, respectively. Measurement of CN surface reactivity coefficients in CH3CN plasmas show that CN reacts with a probability of ˜94%, irrespective of the deposition conditions; this information, combined with gas phase and film characterization data, leads to the conclusion that CN internal energies exert a strong influence on their surface reactivity and that these surface reactions favor their incorporation into the a-CN x film. Moreover, this correlation is shown to hold for several other plasma radicals studied in our lab, suggesting the potential for developing a general model for predicting surface interactions of activated gas phase species. This dissertation also presents results from studies of SF6/O 2 etching of Si. Addition of O2 to the feed gas leads to the generation of SO2, among other species, and gas phase characterization data suggest that SO2 may act as a sink for atomic S, preventing the reformation of SOxFy (y > 0) and thus promoting generation of

  8. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  9. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    Science.gov (United States)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  10. Theoretical and experimental studies of space-related plasma wave propagation and resonance phenomena

    Science.gov (United States)

    Crawford, F. W.

    1975-01-01

    A ten year summary was given of university research on the nature and characteristics of space related plasma resonance phenomena, whistler propagation in laboratory plasmas, and theoretical and experimental studies of plasma wave propagation. Data are also given on long delayed echoes, low frequency instabilities, ionospheric heating, and backscatter, and pulse propagation. A list is included of all conference papers, publications, and reports resulting from the study.

  11. Second-harmonic ion cyclotron resonance heating scenarios of Aditya tokamak plasma

    Indian Academy of Sciences (India)

    Asim Kumar Chattopadhyay; S V Kulkarni; R Srinivasan; Aditya Team

    2015-10-01

    Plasma heating with the fast magnetosonic waves in the ion cyclotron range of frequencies (ICRF) is one of the auxiliary heating schemes of Aditya tokamak. Numerical simulation of second-harmonic resonance heating scenarios in low-temperature, low-density Aditya plasma has been carried out for fast magnetosonic wave absorption in ICRF range, using full-wave ion cyclotron heating code TORIC combined with Fokker–Planck quasilinear solver SSFPQL and the results are explained. In such low-temperature, low-density plasma, ion absorption for second-harmonic resonance heating is less but significant amount of direct electron heating is observed.

  12. Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

    Science.gov (United States)

    Apte, Palash; Norton, Elyse; Robinson, Solomon

    2017-10-01

    The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

  13. The Multiple Resonance Probe: A Novel Device for Industry Compatible Plasma Diagnostics

    Science.gov (United States)

    Brinkmann, Ralf Peter; Storch, Robert; Lapke, Martin; Oberrath, Jens; Schulz, Christian; Styrnoll, Tim; Zietz, Christian; Awakowicz, Peter; Musch, Thomas; Mussenbrock, Thomas; Rolfes, Ilona

    2012-10-01

    To be useful for the supervision or control of technical plasmas, a diagnostic method must be i) robust and stable, ii) insensitive to perturbation by the process, iii) itself not perturbing the process, iv) clearly and easily interpretable without the need for calibration, v) compliant with the requirements of process integration, and, last but not least, vi) economical in terms of investment, footprint, and maintenance. Plasma resonance spectroscopy, exploiting the natural ability of plasmas to resonate on or near the electron plasma frequency, provides a good basis for such an ``industry compatible'' plasma diagnostics. The contribution will describe the general idea of active plasma resonance spectroscopy and introduce a mathematical formalism for its analysis. It will then focus on the novel multipole resonance probe (MRP), where the excited resonances can be classified explicitly and the connection between the probe response and the desired electron density can be cast as a simple formula. The current state of the MRP project will be described, including the experimental characterization of a prototype in comparison with Langmuir probes, and the development of a specialized measurement circuit.

  14. Potential applications of a new microwave ECR (electron cyclotron resonance) multicusp plasma ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, C.C.

    1990-01-01

    A new microwave electron cyclotron resonance (ECR) multicusp plasma ion source using two ECR plasma production regions and multicusp plasma confinement has been developed at Oak Ridge National Laboratory. This source has been operated to produce uniform and dense plasmas over large areas of 300 to 400 cm{sup 2}. The plasma source has been operated with continuous argon gas feed and pulsed microwave power. The discharge initiation phenomena and plasma properties have been investigated and studied as functions of discharge parameters. Together with the discharge characteristics observed, a hypothetical discharge mechanism for this plasma source is reported and discussed. Potential applications, including plasma and ion-beam processing for manufacturing advanced microelectronics and for space electric propulsion, are discussed. 7 refs., 6 figs.

  15. Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2 Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 2: SF6 / O2

    Directory of Open Access Journals (Sweden)

    G. F. Bauerfeldt

    1998-02-01

    Full Text Available In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.

  16. Accessibility condition of wave propagation and multicharged ion production in electron cyclotron resonance ion source plasma

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Yushi, E-mail: kato@eei.eng.osaka-u.ac.jp; Yano, Keisuke; Nishiokada, Takuya; Nagaya, Tomoki; Kimura, Daiju; Kumakura, Sho; Imai, Youta; Hagino, Shogo; Otsuka, Takuro; Sato, Fuminobu [Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan)

    2016-02-15

    A new tandem type source of electron cyclotron resonance (ECR) plasmas has been constructing for producing synthesized ion beams in Osaka University. Magnetic mirror field configuration with octupole magnets can be controlled to various shape of ECR zones, namely, in the 2nd stage plasma to be available by a pair mirror and a supplemental coil. Noteworthy correlations between these magnetic configurations and production of multicharged ions are investigated in detail, as well as their optimum conditions. We have been considering accessibility condition of electromagnetic and electrostatic waves propagating in ECR ion source plasma, and then investigated their correspondence relationships with production of multicharged ions. It has been clarified that there exits efficient configuration of ECR zones for producing multicharged ion beams experimentally, and then has been suggested from detail accessibility conditions on the ECR plasma that new resonance, i.e., upper hybrid resonance, must have occurred.

  17. An Investigation on the He−(1s2s2 2S Resonance in Debye Plasmas

    Directory of Open Access Journals (Sweden)

    Arijit Ghoshal

    2017-01-01

    Full Text Available The effect of Debye plasma on the 1 s 2 s 2 2 S resonance states in the scattering of electron from helium atom has been investigated within the framework of the stabilization method. The interactions among the charged particles in Debye plasma have been modelled by Debye–Huckel potential. The 1 s 2 s excited state of the helium atom has been treated as consisting of a H e + ionic core plus an electron moving around. The interaction between the core and the electron has then been modelled by a model potential. It has been found that the background plasma environment significantly affects the resonance states. To the best of our knowledge, such an investigation of 1 s 2 s 2 2 S resonance states of the electron–helium system embedded in Debye plasma environment is the first reported in the literature.

  18. A survey on the reactive ion etching of silicon in microtechnology

    NARCIS (Netherlands)

    Jansen, Henricus V.; Gardeniers, Johannes G.E.; de Boer, Meint J.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system

  19. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    Science.gov (United States)

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  20. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    Science.gov (United States)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  1. Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States); Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States); Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2016-01-15

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

  2. Analysis and characterization of microwave plasma generated with rectangular all-dielectric resonators

    Science.gov (United States)

    Kourtzanidis, K.; Raja, L. L.

    2017-04-01

    We report on a computational modeling study of small scale plasma discharge formation with rectangular dielectric resonators (DR). An array of rectangular dielectric slabs, separated by a gap of millimeter dimensions is used to provide resonant response when illuminated by an incident wave of 1.26 GHz. A coupled electromagnetic (EM) wave–plasma model is used to describe the breakdown, early response and steady state of the argon discharge. We characterize the plasma generation with respect to the input power, background gas pressure and gap size. It is found that the plasma discharge is generated mainly inside the gaps between the DR at positions that correspond to the antinodes of the resonant enhanced electric field pattern. The enhancement of the electric field inside the gaps is due to a combination of leaking and displacement current radiation from the DR. The plasma is sustained in over-critical densities due to the large skin depth with respect to the gap and plasma size. Electron densities are calculated in the order of {10}18{--}{10}19 {{{m}}}-3 for a gas pressure of 10 Torr, while they exceed 1020 {{{m}}}-3 in atmospheric conditions. Increase of input power leads to more intense ionization and thus faster plasma formation and results to a more symmetric plasma pattern. For low background gas pressure the discharge is diffusive and extends away from the gap region while in high pressure it is constricted inside the gap. An optimal gap size can be found to provide maximum EM energy transfer to the plasma. This fact demonstrates that the gap size dictates to a certain extent the resonant frequency and the Q-factor of the dielectric array and the breakdown fields can not be determined in a straight-forward way but they are functions of the resonators geometry and incident field frequency.

  3. Effects of resistivity on linear plasma responses to resonant magnetic perturbations in tokamak plasmas

    Science.gov (United States)

    Kim, Juhyung; Kim, S. S.; Jhang, Hogun

    2016-09-01

    Numerical studies are made of the effects of resistivity on linear plasma responses to resonant magnetic perturbations (RMPs) in tokamaks based on a reduced magnetohydrodynamic model. From a local two-field model, it is suggested that the ratio of the poloidal electron advection to the resistivity diffusion rate α m can be a figure of merit parameter in linear RMP penetration physics. The shielding efficiency is governed by α m , and when α m ≳ 1 , RMPs are effectively shielded. Global simulations using a four-field model [Hazeltine and Meiss, Phys. Rep. 121, 1 (1985)] show that there exists an effective threshold of the perpendicular electron flow ( Ve , ⊥ c ) beyond which RMPs cannot penetrate. Resistivity is found to determine Ve , ⊥ c which increases as resistivity becomes higher, making RMP penetration easier. At low resistivity, small Ve , ⊥ c renders the RMP penetration sensitive to ion collisionality and the change in q95. The kink response is observed to be closely related to the residual level of RMPs at rational surfaces and can be also strongly affected by resistivity.

  4. Inclined slot-excited annular electron cyclotron resonance plasma source for hyperthermal neutral beam generation.

    Science.gov (United States)

    You, H-J; Kim, D-W; Koo, M; Jang, S-O; Jung, Y-H; Hong, S-H; Lee, B-J

    2011-01-01

    An inclined slot-excited antenna (ISLAN) electron cyclotron resonance (ECR) plasma source is newly designed and constructed for higher flux hyperthermal neutral beam (HNB) generation. The developed ISLAN source is modified from vertical slot-excited antenna (VSLAN) source in two aspects: one is the use of inclined slots instead of vertical slots, and the other is a cusp magnetic field configuration rather than a toroidal configuration. Such modifications allow us to have more uniform arrangement of slots and magnets, then enabling plasma generation more uniform and thinner. Moreover, ECR plasma allows higher ionization rate, enabling plasma density higher even in submillitorr pressures, therefore decreasing the collision rate and∕or the reionization rate of the reflected atoms while passing through the plasma, and eventually getting higher flux of HNBs. In this paper, we report the design features and the plasma characteristics of the ISLAN source by doing plasma measurements and electromagnetic simulations. It was found that ISLAN source can be a high potential source for larger flux HNB generation; the source was found to give higher plasma densities and better uniformities than inductively coupled plasma source, particularly in low pressure ranges. Also, it is important that using ISLAN gives easier matching and better stability, i.e., ISLAN shows similar field patterns and good plasma symmetries irrespective of the variations of the mean diameter of the ring resonator and∕or the presence of a limiter or a reflector, and the operating pressures.

  5. The dispersion and matching characteristics of the helical resonator plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Niazi, K.; Lichtenberg, A.J.; Lieberman, M.A. [Univ. of California, Berkeley, CA (United States)

    1995-10-01

    The dispersion characteristics and the fields of a helical resonator are obtained. The coil is approximated by a helical current layer with infinite conductivity along the current direction (a ``sheath helix``). The plasma column is modeled as a cylindrical dielectric in which the dielectric losses can be neglected in determining the propagation properties of the resonator. Assuming the plasma losses are known, the model can be used to study the matching of the helical resonator to an external power source which is connected to the helix by a tap. The resonator is modeled as a parallel connection of two transmission line segments on each side of the tap position. The authors determine the efficiency of power transfer to the resonator as a function of the tap position driving frequency, and plasma loading. They find that whereas for a small plasma loading it is possible to achieve perfect matching, there exists a critical value of plasma loading beyond which a perfect match is no longer possible.

  6. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. 等离子体刻蚀对CdTe太阳电池性能的影响%Influence of plasma etching on the performance of CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    宋慧瑾; 鄢强

    2013-01-01

    In order to find suitable etching conditions for CdTe thin films in industrial production,different dry etching conditions are applied to CdTe solar cells in this paper. The performance parameters of J-V, C-V and spectral response are studied. It is indicated that the time and the power of plasma etching are too small to completely remove the oxide layer. On the contrary,the surface is damaged too seriously and the device's performance decreases. Estimated by the I-V characteristics,C-V characteristics and spectral response of CdTe thin film solar cells,the plasma etching process used in No. B7 sample is suitable for the post treatment of CdTe thin film solar cells. The conversion efficiency (10. 99%) of CdTe thin film solar cells with complex back contact layer and post treated by plasma etching is higher than the one (10. 26 % ) by bromine and methanol mixture corrosion. It can be seen that the dry plasma etching used for CdTe thin film solar cells is more suitable for industrial production than the wet etching.%采用不同干法腐蚀条件下的CdTe薄膜制成器件,通过I-V、C-V和光谱响应等测试了电池性能参数.结果表明,溅射时间太短和功率太小时不能完全去除氧化层,溅射时间过长和功率过高会对薄膜表面造成损伤,影响器件性能.通过选择器件性能较好的电池、找出适合等离子束溅射工艺的条件,所制成的电池转化效率达到10.99%;而湿法腐蚀所制成器件的转化效率为10.26%.由此可以认为,等离子束轰击溅射的腐蚀方法较湿法腐蚀更适用于CdTe太阳电池的制备.

  8. Multicusp type machine for electron cyclotron resonance plasma with reduced dimensions

    Science.gov (United States)

    Amemiya, H.; Maeda, M.

    1996-03-01

    Plasmas are created in a cusp type magnetic trap using electron cyclotron resonance heating. The magnetic field is generated with permanent magnets forming a 12-pole, whereby the polarity at the ends of the rods has been reversed in order to obtain end plugs and to improve the plasma confinement. In this way, the plasma volume could be reduced such that the cross section was close to or smaller than the cutoff width of a circular waveguide. This increases the microwave power absorbed and gives a high plasma density even above the cutoff value.

  9. Multicusp type machine for electron cyclotron resonance plasma with reduced dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Amemiya, H.; Maeda, M. [The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama-Pref., 351-01 (Japan)

    1996-03-01

    Plasmas are created in a cusp type magnetic trap using electron cyclotron resonance heating. The magnetic field is generated with permanent magnets forming a 12-pole, whereby the polarity at the ends of the rods has been reversed in order to obtain end plugs and to improve the plasma confinement. In this way, the plasma volume could be reduced such that the cross section was close to or smaller than the cutoff width of a circular waveguide. This increases the microwave power absorbed and gives a high plasma density even above the cutoff value. {copyright} {ital 1996 American Institute of Physics.}

  10. Resonance between heat-carrying electrons and Langmuir waves in inertial confinement fusion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Rozmus, W. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2G7 (Canada); Chapman, T.; Berger, R. L. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Brantov, A.; Bychenkov, V. Yu. [P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow 119991 Russia and Center for Fundamental and Applied Research, VNIIA, ROSATOM, 127055 Moscow (Russian Federation); Winjum, B. J. [Department of Electrical Engineering, UCLA, Los Angeles, California 90095 (United States); Brunner, S. [Association EURATOM-Confederation Suisse, EPFL, 1015 Lausanne (Switzerland); Tableman, A.; Tzoufras, M. [Department of Physics and Astronomy, UCLA, Los Angeles, California 90095 (United States); Glenzer, S. [LCLS, Stanford, California 94025 (United States)

    2016-01-15

    In ignition scale hot plasmas, temperature gradients and thermal transport modify electron distributions in a velocity range resonant with Langmuir waves typical of those produced by stimulated Raman scattering. We examine the resultant changes to the Landau damping experienced by these Langmuir waves and the levels of thermal plasma fluctuations. The form factor and Thomson scattering cross-section in such plasmas display unique characteristics of the background conditions. A theoretical model and high-order Vlasov-Fokker-Planck simulations are used in our analysis. An experiment to measure changes in thermal plasma fluctuation levels due to a thermal gradient is proposed.

  11. Resonance-like structure for soliton characteristics in an electron beam-plasma system

    Energy Technology Data Exchange (ETDEWEB)

    Gell, Y.; Nakach, R.

    1978-08-01

    The characteristics of ion acoustic solitons in an electron beam-plasma system are considered. The dependence of the amplitude of the soliton on the density of the beam electrons is found to exhibit a pronounced resonance-like structure. A numerical analysis of the analytic expressions for the soliton characteristics (amplitude and width) is performed for different values of the relevant parameters of the system. The existence and origin of the resonance structure is discussed.

  12. Integral resonator gyroscope

    Science.gov (United States)

    Shcheglov, Kirill V. (Inventor); Challoner, A. Dorian (Inventor); Hayworth, Ken J. (Inventor); Wiberg, Dean V. (Inventor); Yee, Karl Y. (Inventor)

    2008-01-01

    The present invention discloses an inertial sensor having an integral resonator. A typical sensor comprises a planar mechanical resonator for sensing motion of the inertial sensor and a case for housing the resonator. The resonator and a wall of the case are defined through an etching process. A typical method of producing the resonator includes etching a baseplate, bonding a wafer to the etched baseplate, through etching the wafer to form a planar mechanical resonator and the wall of the case and bonding an end cap wafer to the wall to complete the case.

  13. Nonlinear resonant absorption of fast magnetoacoustic waves in strongly anisotropic and dispersive plasmas

    CERN Document Server

    Clack, C

    2009-01-01

    The nonlinear theory of driven magnetohydrodynamics (MHD) waves in strongly anisotropic and dispersive plasmas, developed for slow resonance by Clack and Ballai [Phys. Plasmas, 15, 2310 (2008)] and Alfv\\'en resonance by Clack \\emph{et al.} [A&A,494, 317 (2009)], is used to study the weakly nonlinear interaction of fast magnetoacoustic (FMA) waves in a one-dimensional planar plasma. The magnetic configuration consists of an inhomogeneous magnetic slab sandwiched between two regions of semi-infinite homogeneous magnetic plasmas. Laterally driven FMA waves penetrate the inhomogeneous slab interacting with the localized slow or Alfv\\'{e}n dissipative layer and are partly reflected, dissipated and transmitted by this region. The nonlinearity parameter defined by Clack and Ballai (2008) is assumed to be small and a regular perturbation method is used to obtain analytical solutions in the slow dissipative layer. The effect of dispersion in the slow dissipative layer is to further decrease the coefficient of ener...

  14. Influence of external resonant magnetic perturbation field on edge plasma of small tokamak HYBTOK-II

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Y., E-mail: hayashi-yuki13@ees.nagoya-u.ac.jp [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Suzuki, Y.; Ohno, N. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Okamoto, M. [Ishikawa National College of Technology, Kitachujo, Tsubata-cho, Kahoku-gun, Ishikawa 929-0392 (Japan); Kikuchi, Y. [University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Sakakibara, S.; Watanabe, K.; Takemura, Y. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan)

    2015-08-15

    Radial profile of externally applied resonant magnetic perturbation (RMP) field with mode numbers of m = 6 and n = 2 in a small tokamak device HYBTOK-II have been investigated using a magnetic probe array, which is able to measure the radial profile of magnetic field perturbation induced by applying RMP. Results of RMP penetration into the plasma show that the RMP decreased toward the plasma center, while they were amplified around the resonant surface with a safety factor q = 3 due to the formation of magnetic islands. This suggests that RMP fields for controlling edge plasmas may trigger some kind of MHD instabilities. In addition, simulation results, based on a linearized four-field model, which agrees with the experimental ones, indicates that the penetration and amplification process of RMP strongly depend on a Doppler-shifted frequency between the RMP and plasma rotation.

  15. Investigation of the resonance frequency and performance of a partially plasma filled reconfigurable cylindrical TE111 mode cavity

    Science.gov (United States)

    Hadaegh, Mostafa; Mohajeri, Farzad

    2017-05-01

    A partially plasma filled reconfigurable cylindrical cavity is proposed. Plasma offers an encouraging alternative to metal for a wide variety of microwave engineering applications. Implementation of a low-cost plasma element permits the resonant frequency to be changed electrically. The level of the resonant frequency shifts toward the empty-cavity resonant frequency and depends on certain parameters, such as the plasma diameter, relative permittivity and thickness of the plasma tube. In this article, we first introduce the partially plasma filled reconfigurable cylindrical cavity; then, the resonant frequency equation of the cavity is obtained by variational methods. Finally, we plot the resonant frequency versus different parameters of the cavity, which we compare with the results of the CST software. We show that the two results are compatible with each other.

  16. Electromagnetic, complex image model of a large area RF resonant antenna as inductive plasma source

    Science.gov (United States)

    Guittienne, Ph; Jacquier, R.; Howling, A. A.; Furno, I.

    2017-03-01

    A large area antenna generates a plasma by both inductive and capacitive coupling; it is an electromagnetically coupled plasma source. In this work, experiments on a large area planar RF antenna source are interpreted in terms of a multi-conductor transmission line coupled to the plasma. This electromagnetic treatment includes mutual inductive coupling using the complex image method, and capacitive matrix coupling between all elements of the resonant network and the plasma. The model reproduces antenna input impedance measurements, with and without plasma, on a 1.2× 1.2 m2 antenna used for large area plasma processing. Analytic expressions are given, and results are obtained by computation of the matrix solution. This method could be used to design planar inductive sources in general, by applying the termination impedances appropriate to each antenna type.

  17. Multicusp type electron cyclotron resonance plasma with arrangement of permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Amemiya, H.; Maeda, M. [Institute of Physical and Chemical Research, Wako, Saitama (Japan)

    1995-09-01

    ECR (electron cyclotron resonance) plasmas are generated in a multicusp field of 12-pole formed by permanent magnets, where the polarity of the magnetic field at the end sections is reversed to reflect axially drifting electrons as in the mirror field. Furthermore, the radius of multicusp is contracted below the cut-off radius of the waveguide in vacuum. This is effective in increasing the microwave power absorbed in the plasma and the ion density. (author).

  18. Limitations of electron cyclotron resonance ion source performances set by kinetic plasma instabilities.

    Science.gov (United States)

    Tarvainen, O; Laulainen, J; Komppula, J; Kronholm, R; Kalvas, T; Koivisto, H; Izotov, I; Mansfeld, D; Skalyga, V

    2015-02-01

    Electron cyclotron resonance ion source (ECRIS) plasmas are prone to kinetic instabilities due to anisotropy of the electron energy distribution function stemming from the resonant nature of the electron heating process. Electron cyclotron plasma instabilities are related to non-linear interaction between plasma waves and energetic electrons resulting to strong microwave emission and a burst of energetic electrons escaping the plasma, and explain the periodic oscillations of the extracted beam currents observed in several laboratories. It is demonstrated with a minimum-B 14 GHz ECRIS operating on helium, oxygen, and argon plasmas that kinetic instabilities restrict the parameter space available for the optimization of high charge state ion currents. The most critical parameter in terms of plasma stability is the strength of the solenoid magnetic field. It is demonstrated that due to the instabilities the optimum Bmin-field in single frequency heating mode is often ≤0.8BECR, which is the value suggested by the semiempirical scaling laws guiding the design of modern ECRISs. It is argued that the effect can be attributed not only to the absolute magnitude of the magnetic field but also to the variation of the average magnetic field gradient on the resonance surface.

  19. Limitations of electron cyclotron resonance ion source performances set by kinetic plasma instabilities

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O., E-mail: olli.tarvainen@jyu.fi; Laulainen, J.; Komppula, J.; Kronholm, R.; Kalvas, T.; Koivisto, H. [Department of Physics, University of Jyväskylä, 40500 Jyväskylä (Finland); Izotov, I.; Mansfeld, D. [Institute of Applied Physics, RAS, 46 Ul‘yanova St., 603950 Nizhny Novgorod (Russian Federation); Skalyga, V. [Institute of Applied Physics, RAS, 46 Ul‘yanova St., 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod (UNN), 23 Gagarina St., 603950 Nizhny Novgorod (Russian Federation)

    2015-02-15

    Electron cyclotron resonance ion source (ECRIS) plasmas are prone to kinetic instabilities due to anisotropy of the electron energy distribution function stemming from the resonant nature of the electron heating process. Electron cyclotron plasma instabilities are related to non-linear interaction between plasma waves and energetic electrons resulting to strong microwave emission and a burst of energetic electrons escaping the plasma, and explain the periodic oscillations of the extracted beam currents observed in several laboratories. It is demonstrated with a minimum-B 14 GHz ECRIS operating on helium, oxygen, and argon plasmas that kinetic instabilities restrict the parameter space available for the optimization of high charge state ion currents. The most critical parameter in terms of plasma stability is the strength of the solenoid magnetic field. It is demonstrated that due to the instabilities the optimum B{sub min}-field in single frequency heating mode is often ≤0.8B{sub ECR}, which is the value suggested by the semiempirical scaling laws guiding the design of modern ECRISs. It is argued that the effect can be attributed not only to the absolute magnitude of the magnetic field but also to the variation of the average magnetic field gradient on the resonance surface.

  20. A comparative study of CF{sub 4}/O{sub 2}/Ar and C{sub 4}F{sub 8}/O{sub 2}/Ar plasmas for dry etching applications

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Inwoo [Department of Control and Instrumentation Engineering, Korea University, 2511 Sejong-Ro, Sejong 339-700 (Korea, Republic of); Efremov, Alexander [Department of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7F. Engels St., 153000 Ivanovo (Russian Federation); Yeom, Geun Young [Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kwon, Kwang-Ho, E-mail: kwonkh@korea.ac.kr [Department of Control and Instrumentation Engineering, Korea University, 2511 Sejong-Ro, Sejong 339-700 (Korea, Republic of)

    2015-03-31

    The effect of the O{sub 2}/Ar mixing ratio in CF{sub 4}/O{sub 2}/Ar and C{sub 4}F{sub 8}/O{sub 2}/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O{sub 2} results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. - Highlights: • The goal was to conduct a comparative study of CF{sub 4}/O{sub 2}/Ar and C{sub 4}F{sub 8}/O{sub 2}/Ar plasmas. • The focus was on the parameters directly influencing dry etching mechanisms. • Model-based analysis for neutral species was used in this paper.

  1. Analytical investigation of microwave resonances of a curling probe for low and high-pressure plasma diagnostics

    Science.gov (United States)

    Arshadi, Ali; Brinkmann, Ralf Peter

    2017-01-01

    The concept of ‘active plasma resonance spectroscopy’ (APRS) has attracted greater interest in recent years as an established plasma diagnostic technique. The APRS describes a class of related methods utilizing the intrinsic ability of plasma to resonate at or near the electron plasma frequency {ω\\text{pe}} . The Curling probe (CP) as a novel realization of the APRS idea, is a miniaturized spiral slot embedded flatly in the chamber wall. Consequently, a plasma diagnostic technique with minimum disturbance and without metal contamination can be developed. To measure the plasma parameters the CP is fed with a weak frequency-swept signal from the exterior of the plasma chamber by a network analyzer which also records the response of the plasma versus the frequency. The resonance behavior is strongly dependent on the electron density and the gas pressure. The CP has also the advantage of resonating at a frequency greater than {ω\\text{pe}} which is dependent on the spiral’s length. The double resonance characteristic gives the CP the ability to be applied in varying plasma regimes. Assuming that the spiralization does not have a considerable effect on the resonances, a ‘straightened’ infinite length CP has recently been investigated (Arshadi and Brinkmann 2016 Plasma Sources Sci. Technol. 25 045014) to obtain the surface wave resonances. This work generalizes the approach and models the CP by a rectangular slot-type resonator located between plasma and quartz. Cold plasma theory and Maxwell’s equations are utilized to compute the electromagnetic fields propagating into the plasma by the diffraction of an incident plane wave at the slot. A mathematical model is employed and both kinds of resonances are derived. The analytical study of this paper shows good agreement with the numerical results of the probe inventors.

  2. Demonstration of resonant backward Raman amplification in high-density gas-jet plasma

    Science.gov (United States)

    Wu, Z. H.; Zhou, K. N.; Zheng, X. M.; Wei, X. F.; Zhu, Q. H.; Su, J. Q.; Xie, N.; Jiao, Z. H.; Peng, H.; Wang, X. D.; Sun, L.; Li, Q.; Huang, Z.; Zuo, Y. L.

    2016-10-01

    Backward Raman amplification was observed in a 0.7 mm-long high-density gas jet plasma. The 800 nm 30 fs seed pulse was amplified by a factor  ∼28, with an output energy of 2.8 mJ. The output spectra showed that the waveband around 800 nm was significantly amplified. The experimental result demonstrated that the resonant Raman amplification can be realized in high-density plasma against strong plasma instability.

  3. Fullerene-rare gas mixed plasmas in an electron cyclotron resonance ion source

    CERN Document Server

    Asaji, T; Uchida, T; Minezaki, H; Ishihara, S; Racz, R; Muramatsu, M; Biri, S; Kitagawa, A; Kato, Y; Yoshida, Y

    2015-01-01

    A synthesis technology of endohedral fullerenes such as Fe@C60 has developed with an electron cyclotron resonance (ECR) ion source. The production of N@C60 was reported. However, the yield was quite low, since most fullerene molecules were broken in the ECR plasma. We have adopted gas-mixing techniques in order to cool the plasma and then reduce fullerene dissociation. Mass spectra of ion beams extracted from fullerene-He, Ar or Xe mixed plasmas were observed with a Faraday cup. From the results, the He gas mixing technique is effective against fullerene destruction.

  4. On RF heating of inhomogeneous collisional plasma under ion-cyclotron resonance conditions

    Energy Technology Data Exchange (ETDEWEB)

    Timofeev, A. V., E-mail: Timofeev-AV@nrcki.ru [Kurchatov Institute (Russian Federation)

    2015-11-15

    During ion-cyclotron resonance (ICR) heating of plasma by the magnetic beach method, as well as in some other versions of ICR heating, it is necessary to excite Alfvén oscillations. In this case, it is difficult to avoid the phenomenon of the Alfvén resonance, in which Alfvén oscillations transform into lower hybrid oscillations. The latter efficiently interact with electrons, due to which most of the deposited RF energy is spent on electron (rather than ion) heating. The Alfvén resonance takes place due to plasma inhomogeneity across the external magnetic field. Therefore, it could be expected that variations in the plasma density profile would substantially affect the efficiency of the interaction of RF fields with charged particles. However, the results obtained for different plasma density profiles proved to be nearly the same. In the present work, a plasma is considered the parameters of which correspond to those planned in future ICR plasma heating experiments on the PS-1 facility at the Kurchatov Institute. When analyzing the interaction of RF fields with charged particles, both the collisionless resonance interaction and the interaction caused by Coulomb collisions are taken into account, because, in those experiments, the Coulomb collision frequency will be comparable with the frequency of the heating field. Antennas used for ICR heating excite RF oscillations with a wide spectrum of wavenumbers along the magnetic field. After averaging over the spectrum, the absorbed RF energy calculated with allowance for collisions turns out to be close to that absorbed in collisionless plasma, the energy fraction absorbed by electrons being substantially larger than that absorbed by ions.

  5. On RF heating of inhomogeneous collisional plasma under ion-cyclotron resonance conditions

    Science.gov (United States)

    Timofeev, A. V.

    2015-11-01

    During ion-cyclotron resonance (ICR) heating of plasma by the magnetic beach method, as well as in some other versions of ICR heating, it is necessary to excite Alfvén oscillations. In this case, it is difficult to avoid the phenomenon of the Alfvén resonance, in which Alfvén oscillations transform into lower hybrid oscillations. The latter efficiently interact with electrons, due to which most of the deposited RF energy is spent on electron (rather than ion) heating. The Alfvén resonance takes place due to plasma inhomogeneity across the external magnetic field. Therefore, it could be expected that variations in the plasma density profile would substantially affect the efficiency of the interaction of RF fields with charged particles. However, the results obtained for different plasma density profiles proved to be nearly the same. In the present work, a plasma is considered the parameters of which correspond to those planned in future ICR plasma heating experiments on the PS-1 facility at the Kurchatov Institute. When analyzing the interaction of RF fields with charged particles, both the collisionless resonance interaction and the interaction caused by Coulomb collisions are taken into account, because, in those experiments, the Coulomb collision frequency will be comparable with the frequency of the heating field. Antennas used for ICR heating excite RF oscillations with a wide spectrum of wavenumbers along the magnetic field. After averaging over the spectrum, the absorbed RF energy calculated with allowance for collisions turns out to be close to that absorbed in collisionless plasma, the energy fraction absorbed by electrons being substantially larger than that absorbed by ions.

  6. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma.

    Science.gov (United States)

    Ito, Hiroshi; Kuwahara, Takuya; Kawaguchi, Kentaro; Higuchi, Yuji; Ozawa, Nobuki; Kubo, Momoji

    2016-03-21

    We used our etching simulator [H. Ito et al., J. Phys. Chem. C, 2014, 118, 21580-21588] based on tight-binding quantum chemical molecular dynamics (TB-QCMD) to elucidate SiC etching mechanisms. First, the SiC surface is irradiated with SF5 radicals, which are the dominant etchant species in experiments, with the irradiation energy of 300 eV. After SF5 radicals bombard the SiC surface, Si-C bonds dissociate, generating Si-F, C-F, Si-S, and C-S bonds. Then, etching products, such as SiS, CS, SiFx, and CFx (x = 1-4) molecules, are generated and evaporated. In particular, SiFx is the main generated species, and Si atoms are more likely to vaporize than C atoms. The remaining C atoms on SiC generate C-C bonds that may decrease the etching rate. Interestingly, far fewer Si-Si bonds than C-C bonds are generated. We also simulated SiC etching with SF3 radicals. Although the chemical reaction dynamics are similar to etching with SF5 radicals, the etching rate is lower. Next, to clarify the effect of O atom addition on the etching mechanism, we also simulated SiC etching with SF5 and O radicals/atoms. After bombardment with SF5 radicals, Si-C bonds dissociate in a similar way to the etching without O atoms. In addition, O atoms generate many C-O bonds and COy (y = 1-2) molecules, inhibiting the generation of C-C bonds. This indicates that O atom addition improves the removal of C atoms from SiC. However, for a high O concentration, many C-C and Si-Si bonds are generated. When the O atoms dissociate the Si-C bonds and generate dangling bonds, the O atoms terminate only one or two dangling bonds. Moreover, at high O concentrations there are fewer S and F atoms to terminate the dangling bonds than at low O concentration. Therefore, few dangling bonds of dissociated Si and C atoms are terminated, and they form many Si-Si and C-C bonds. Furthermore, we propose that the optimal O concentration is 50-60% because both Si and C atoms generate many etching products producing fewer C

  7. Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

    1978-01-01

    The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...... of the experiment....

  8. Resonant Kα Spectroscopy of Solid-Density Aluminum Plasmas

    Science.gov (United States)

    Cho, B. I.; Engelhorn, K.; Vinko, S. M.; Chung, H.-K.; Ciricosta, O.; Rackstraw, D. S.; Falcone, R. W.; Brown, C. R. D.; Burian, T.; Chalupský, J.; Graves, C.; Hájková, V.; Higginbotham, A.; Juha, L.; Krzywinski, J.; Lee, H. J.; Messersmidt, M.; Murphy, C.; Ping, Y.; Rohringer, N.; Scherz, A.; Schlotter, W.; Toleikis, S.; Turner, J. J.; Vysin, L.; Wang, T.; Wu, B.; Zastrau, U.; Zhu, D.; Lee, R. W.; Nagler, B.; Wark, J. S.; Heimann, P. A.

    2012-12-01

    The x-ray intensities made available by x-ray free electron lasers (FEL) open up new x-ray matter interaction channels not accessible with previous sources. We report here on the resonant generation of Kα emission, that is to say the production of copious Kα radiation by tuning the x-ray FEL pulse to photon energies below that of the K edge of a solid aluminum sample. The sequential absorption of multiple photons in the same atom during the 80 fs pulse, with photons creating L-shell holes and then one resonantly exciting a K-shell electron into one of these holes, opens up a channel for the Kα production, as well as the absorption of further photons. We demonstrate rich spectra of such channels, and investigate the emission produced by tuning the FEL energy to the K-L transitions of those highly charged ions that have transition energies below the K edge of the cold material. The spectra are sensitive to x-ray intensity dependent opacity effects, with ions containing L-shell holes readily reabsorbing the Kα radiation.

  9. Resonant Kα spectroscopy of solid-density aluminum plasmas.

    Science.gov (United States)

    Cho, B I; Engelhorn, K; Vinko, S M; Chung, H-K; Ciricosta, O; Rackstraw, D S; Falcone, R W; Brown, C R D; Burian, T; Chalupský, J; Graves, C; Hájková, V; Higginbotham, A; Juha, L; Krzywinski, J; Lee, H J; Messersmidt, M; Murphy, C; Ping, Y; Rohringer, N; Scherz, A; Schlotter, W; Toleikis, S; Turner, J J; Vysin, L; Wang, T; Wu, B; Zastrau, U; Zhu, D; Lee, R W; Nagler, B; Wark, J S; Heimann, P A

    2012-12-14

    The x-ray intensities made available by x-ray free electron lasers (FEL) open up new x-ray matter interaction channels not accessible with previous sources. We report here on the resonant generation of Kα emission, that is to say the production of copious Kα radiation by tuning the x-ray FEL pulse to photon energies below that of the K edge of a solid aluminum sample. The sequential absorption of multiple photons in the same atom during the 80 fs pulse, with photons creating L-shell holes and then one resonantly exciting a K-shell electron into one of these holes, opens up a channel for the Kα production, as well as the absorption of further photons. We demonstrate rich spectra of such channels, and investigate the emission produced by tuning the FEL energy to the K-L transitions of those highly charged ions that have transition energies below the K edge of the cold material. The spectra are sensitive to x-ray intensity dependent opacity effects, with ions containing L-shell holes readily reabsorbing the Kα radiation.

  10. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  11. Observations of rotation in JET plasmas with electron heating by ion cyclotron resonance heating

    DEFF Research Database (Denmark)

    Hellsten, T.; Johnson, T. J.; Van Eester, D.

    2012-01-01

    The rotation of L-mode plasmas in the JET tokamak heated by waves in the ion cyclotron range of frequencies (ICRF) damped on electrons, is reported. The plasma in the core is found to rotate in the counter-current direction with a high shear and in the outer part of the plasma with an almost...... constant angular rotation. The core rotation is stronger in magnitude than observed for scenarios with dominating ion cyclotron absorption. Two scenarios are considered: the inverted mode conversion scenarios and heating at the second harmonic He-3 cyclotron resonance in H plasmas. In the latter case......, electron absorption of the fast magnetosonic wave by transit time magnetic pumping and electron Landau damping (TTMP/ELD) is the dominating absorption mechanism. Inverted mode conversion is done in (He-3)-H plasmas where the mode converted waves are essentially absorbed by electron Landau damping. Similar...

  12. Plasma instability in the afterglow of electron cyclotron resonance discharge sustained in a mirror trap

    Energy Technology Data Exchange (ETDEWEB)

    Izotov, I.; Mansfeld, D.; Skalyga, V.; Zorin, V. [Institute of Applied Physics, RAS, 46 Ulyanova St., 603950 Nizhny Novgorod (Russian Federation); Grahn, T.; Kalvas, T.; Koivisto, H.; Komppula, J.; Peura, P.; Tarvainen, O.; Toivanen, V. [Department of Physics, University of Jyvaeskylae, P.O. Box 35 (YFL), 40500 Jyvaeskylae (Finland)

    2012-12-15

    The work presented in this article is devoted to time-resolved diagnostics of non-linear effects observed during the afterglow plasma decay of a 14 GHz electron cyclotron resonance ion source operated in pulsed mode. Plasma instabilities that cause perturbations of the extracted ion current during the decay were observed and studied. It is shown that these perturbations are associated with precipitation of high energy electrons along the magnetic field lines and strong bursts of bremsstrahlung emission. The effect of ion source settings on the onset of the observed instabilities was investigated. Based on the experimental data and estimated plasma properties, it is assumed that the instabilities are of cyclotron type. The conclusion is supported by a comparison to other types of plasma devices which exhibit similar characteristics but which operate in a different plasma confinement regime.

  13. Spectral Interpretation of Radio Sounder-Stimulated Magnetospheric Plasma Resonances in Terms of Kappa Distributions

    Science.gov (United States)

    Benson, Robert F.; Vinas, Adolfo, F.; Fainberg, Joseph; Osherovich, Vladimir A.; Purser, Carola M.; Galkin, Ivan A.; Reinisch, Bodo W.

    2011-01-01

    Magnetosphere sounders stimulate plasma resonances between the harmonics of the electron cyclotron frequency and above the upper-hybrid frequency. More than three decades ago they were recognized as equivalent to ionospheric topside-sounder-stimulated resonances, designated as Qn resonances a decade earlier, with one important difference: the magnetospheric Qn frequencies often indicated that the background electron-velocity distribution was non-Maxwellian. Interpretations based on bi-Maxwellian and kappa distributions have been proposed. Here we expand on the latter, which requires fewer free parameters, by comparing kappa-derived Qn frequencies with observations from the Radio Plasma Imager on the Imager for Magnetopause-to-Aurora Global Exploration (IMAGE) satellite.

  14. Gallium-assisted growth of silicon nanowires by electron cyclotron resonance plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, M J; Cervera, M; Ruiz, E; Pau, J L; Piqueras, J [Laboratorio de Microelectronica, Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Avella, M; Jimenez, J, E-mail: maria.jesus.hernandez@uam.es [Fisica de la Materia Condensada, ETSII, Universidad de Valladolid, 47011 Valladolid (Spain)

    2010-11-12

    The use of gallium droplets for growing Si nanowires (SiNWs) by electron cyclotron resonance plasmas is investigated. First, the relationship between evaporation time and resultant size of the gallium droplets is studied. Through the use of spectroscopic ellipsometry, the dependence of the surface plasmon resonance (SPR) energy on the droplet size is determined. From these gallium droplets, SiNWs were grown at 300 and 550 deg. C in electron cyclotron resonance plasmas containing SiH{sub 4}, Ar, and H{sub 2}. Scanning electron microscopy results show that tapered NWs are obtained for a wide range of growth conditions. Besides, it is found that H{sub 2} plays an important role in the parasitic axial growth of the SiNWs. Namely, H{sub 2} inhibits the radial growth and contributes dramatically to increasing the SiNW defects.

  15. Multicusp type Electron Cyclotron Resonance ion source for plasma processing

    Energy Technology Data Exchange (ETDEWEB)

    Amemiya, Hiroshi; Shigueoka, Yoshyuki (Institute of Physical and Chemical Research, Wako, Saitama (Japan)); Ishii, Shigeyuki

    1991-02-01

    A multi-cusp type ECR (electron cyclotron resonance) ion source is built with use of SmCo magnets and 2.45 GHz-TE{sub 11} circular mode microwave. The ion source is operated at pressures from 10{sup -4} to 10{sup -3} Torr with the input microwave power from 100 to 400 W. In hydrogen, the current density of H{sup +} is higher than those of H{sub 2}{sup +} and H{sub 3}{sup +}. The dependence of the fraction of each ion species on the power and pressure is measured and explained by rate equations. The source is operated also in other gases. Mass spectra in He, N{sub 2}, O{sub 2}, Ar and CH{sub 4} are shown together with the pressure and power dependences. Multicharged state of up to 3 has been obtained. (author).

  16. Inductively coupled plasma etching of GaN using SiCl{sub 4}/Cl{sub 2}/Ar for submicron-sized features fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Dylewicz, R.; Patela, S. [Photonics Group, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Hogg, R.A.; Fry, P.W.; Parbrook, P.J.; Airey, R.; Tahraoui, A. [Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2007-06-15

    In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl{sub 4}/Cl{sub 2}/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 Aa min{sup -1} as well as etching selectivity of GaN over SiO{sub 2} from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Resonant- and avalanche-ionization amplification of laser-induced plasma in air

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yue; Zhang, Zhili, E-mail: zzhang24@utk.edu [Department of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Jiang, Naibo; Roy, Sukesh [Spectral Energies, LLC, 5100 Springfield St., Suite 301, Dayton, Ohio 45431 (United States); Gord, James R. [Air Force Research Laboratory, Aerospace Systems Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States)

    2014-10-14

    Amplification of laser-induced plasma in air is demonstrated utilizing resonant laser ionization and avalanche ionization. Molecular oxygen in air is ionized by a low-energy laser pulse employing (2 + 1) resonance-enhanced multi-photon ionization (REMPI) to generate seed electrons. Subsequent avalanche ionization of molecular oxygen and nitrogen significantly amplifies the laser-induced plasma. In this plasma-amplification effect, three-body attachments to molecular oxygen dominate the electron-generation and -loss processes, while either nitrogen or argon acts as the third body with low electron affinity. Contour maps of the electron density within the plasma obtained in O₂/N₂ and O₂/Ar gas mixtures are provided to show relative degrees of plasma amplification with respect to gas pressure and to verify that the seed electrons generated by O₂ 2 + 1 REMPI are selectively amplified by avalanche ionization of molecular nitrogen in a relatively low-pressure condition (≤100 Torr). Such plasma amplification occurring in air could be useful in aerospace applications at high altitude.

  18. Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.

    Science.gov (United States)

    Gu, Yifeng; Song, Sannian; Song, Zhitang; Cheng, Yan; Liu, Xuyan; Du, Xiaofeng; Liu, Bo; Feng, Songlin

    2013-02-01

    Si(x)Sb2Te material system is novel for phase-change random access memory applications. Its properties are more outstanding than the widely used material Ge2Sb2Te5. Etching process is one of the critical steps in the device fabrication. The etching characteristics of phase-change material Si(x)Sb2Te were studied with CF4/Ar gas mixture by a reactive ion etching system. The changes of etching rate, etching profile and surface root-mean-square roughness resulted from variation of the gas-mixing ratio were investigated under constant pressure (50 mTorr) and applying power (200 W). Si0.34Sb2Te is with the highest phase-change speed and the lowest power consumption in the PCRAM memory among these compositions, which means it is the most promising candidate for the PCRAM applications. So the most optimized CF4/Ar gas ratio for Si0.34Sb2Te was studied, the value is 25/25. The etching rate is 155 nm/min, and the selectivity of Si0.34Sb2Te to SiO2 is as high as 3.4 times. Furthermore, the smooth surface was achieved with this optimized gas ratio.

  19. Characterisation of C–F Polymer Film Formation on the Air-Bearing Surface Etched Sidewall of Fluorine-Based Plasma Interacting with AL2O3–TiC Substrate

    Directory of Open Access Journals (Sweden)

    Alonggot Limcharoen

    2013-01-01

    Full Text Available C–F polymer redeposition is generated on the etched sidewall of the patterned air-bearing surface (ABS. This C–F polymer is a by-product from fluorine-based plasma using a Surface Technology Systems multiplex-pro air-bearing etch (ABE. The morphology of the re-deposition and the composite element was observed by a scanning electron microscope (SEM. The chemical bonding results were characterised via X-ray photoelectron spectroscopy, attenuated total reflected infrared spectroscopy and visible Raman spectroscopy. The purpose of this work is to demonstrate a modification of AlF3 re-deposition to C–F polymer re-deposition, which is easily stripped out by an isopropyl alcohol-based solution. The benefit of this research is the removal of the re-deposition in the resist strip process without additional cleaning process steps.

  20. Electron heating via the self-excited plasma series resonance in geometrically symmetric multi-frequency capacitive plasmas

    CERN Document Server

    Schuengel, E; Donko, Z; Korolov, I; Derzsi, A; Schulze, J

    2016-01-01

    The self-excitation of Plasma Series Resonance (PSR) oscillations plays an important role in the electron heating dynamics in Capacitively Coupled Radio Frequency (CCRF) plasmas. In a combined approach of PIC/MCC simulations and a theoretical model based on an equivalent circuit, we investigate the self-excitation of PSR oscillations and their effect on the electron heating in geometrically symmetric CCRF plasmas driven by multiple consecutive harmonics. The discharge symmetry is controlled via the Electrical Asymmetry Effect, i.e. by varying the total number of harmonics and tuning the phase shifts between them. It is demonstrated that PSR oscillations will be self-excited under both symmetric and asymmetric conditions, if (i) the charge-voltage relation of the plasma sheaths deviates from a simple quadratic behavior and if (ii) the inductance of the plasma bulk exhibits a temporal modulation. These two effects have been neglected up to now, but we show that they must be included in the model in order to pro...

  1. Resonant-Cavity Driven Alfvén Waves in a Helium-Hydrogen Plasma

    Science.gov (United States)

    Clark, Mary; Dorfman, Seth; Vincena, Steve; Zhu, Ziyan; Carter, Troy

    2016-10-01

    Alfvén waves exist in many regimes. In fusion experiments, they can disrupt fusion processes by scattering particles, and in space, they are proposed to heat the solar corona. In these environments, multiple ion species usually occur. It is therefore relevant to study Alfvén waves carried by multiple ion species in a laboratory device. Here a resonant cavity launches them in UCLA's Large Plasma Device (LaPD) in a helium/hydrogen plasma. In a two-ion species plasma, Alfvén waves propagate in two bands: below the heavy ion cyclotron frequency and between a hybrid frequency and the light ion cyclotron frequency. We observe two Alfvén waves at different frequencies (in different bands) emerge when the resonant cavity is excited at one frequency: one at the driving frequency and one at a lower frequency. The two frequencies and wavelengths agree with the dispersion relation. The resonant cavity theory predicts that the wavelengths should be 4 times the cavity's length; only the high frequency lies close to this prediction. This work was funded by UCLA's Norton Rodman Award, and was performed at the Basic Plasma Science Facility, funded by DoE and NSF.

  2. Bright gamma-rays from betatron resonance acceleration in near critical density plasma

    CERN Document Server

    Liu, B; Wu, D; Liu, J; Chen, C E; Yan, X Q; He, X T

    2013-01-01

    We show that electron betatron resonance acceleration by an ultra-intense ultra-short laser pulse in a near critical density plasma works as a high-brightness gamma-ray source. Compared with laser plasma X-ray sources in under-dense plasma, near critical density plasma provides three benefits for electron radiation: more radiation electrons, larger transverse amplitude, and higher betatron oscillation frequency. Three-dimensional particle-in-cell simulations show that, by using a 7.4J laser pulse, 8.3mJ radiation with critical photon energy 1MeV is emitted. The critical photon energy $E_c$ increases with the incident laser energy %faster than a linear relation. $W_I$ as $E_c \\propto W_I^{1.5}$, and the corresponding photon number is proportional to $W_I$. A simple analytical synchrotron-like radiation model is built, which can explain the simulation results.

  3. Non-linear magnetohydrodynamic modeling of plasma response to resonant magnetic perturbations

    Energy Technology Data Exchange (ETDEWEB)

    Orain, F.; Bécoulet, M.; Dif-Pradalier, G.; Nardon, E.; Passeron, C.; Latu, G.; Grandgirard, V.; Fil, A.; Ratnani, A. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Huijsmans, G. [ITER Organization, Route de Vinon, F-13115 Saint-Paul-Lez-Durance (France); Pamela, S. [IIFS-PIIM. Aix Marseille Université - CNRS, 13397 Marseille Cedex20 (France); Chapman, I.; Kirk, A.; Thornton, A. [EURATOM/CCFE Fusion Association, Culham Science Centre, Oxon OX14 3DB (United Kingdom); Hoelzl, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (Germany); Cahyna, P. [Association EURATOM/IPP.CR, Prague (Czech Republic)

    2013-10-15

    The interaction of static Resonant Magnetic Perturbations (RMPs) with the plasma flows is modeled in toroidal geometry, using the non-linear resistive MHD code JOREK, which includes the X-point and the scrape-off-layer. Two-fluid diamagnetic effects, the neoclassical poloidal friction and a source of toroidal rotation are introduced in the model to describe realistic plasma flows. RMP penetration is studied taking self-consistently into account the effects of these flows and the radial electric field evolution. JET-like, MAST, and ITER parameters are used in modeling. For JET-like parameters, three regimes of plasma response are found depending on the plasma resistivity and the diamagnetic rotation: at high resistivity and slow rotation, the islands generated by the RMPs at the edge resonant surfaces rotate in the ion diamagnetic direction and their size oscillates. At faster rotation, the generated islands are static and are more screened by the plasma. An intermediate regime with static islands which slightly oscillate is found at lower resistivity. In ITER simulations, the RMPs generate static islands, which forms an ergodic layer at the very edge (ψ≥0.96) characterized by lobe structures near the X-point and results in a small strike point splitting on the divertor targets. In MAST Double Null Divertor geometry, lobes are also found near the X-point and the 3D-deformation of the density and temperature profiles is observed.

  4. Non-linear magnetohydrodynamic modeling of plasma response to resonant magnetic perturbations

    Science.gov (United States)

    Orain, F.; Bécoulet, M.; Dif-Pradalier, G.; Huijsmans, G.; Pamela, S.; Nardon, E.; Passeron, C.; Latu, G.; Grandgirard, V.; Fil, A.; Ratnani, A.; Chapman, I.; Kirk, A.; Thornton, A.; Hoelzl, M.; Cahyna, P.

    2013-10-01

    The interaction of static Resonant Magnetic Perturbations (RMPs) with the plasma flows is modeled in toroidal geometry, using the non-linear resistive MHD code JOREK, which includes the X-point and the scrape-off-layer. Two-fluid diamagnetic effects, the neoclassical poloidal friction and a source of toroidal rotation are introduced in the model to describe realistic plasma flows. RMP penetration is studied taking self-consistently into account the effects of these flows and the radial electric field evolution. JET-like, MAST, and ITER parameters are used in modeling. For JET-like parameters, three regimes of plasma response are found depending on the plasma resistivity and the diamagnetic rotation: at high resistivity and slow rotation, the islands generated by the RMPs at the edge resonant surfaces rotate in the ion diamagnetic direction and their size oscillates. At faster rotation, the generated islands are static and are more screened by the plasma. An intermediate regime with static islands which slightly oscillate is found at lower resistivity. In ITER simulations, the RMPs generate static islands, which forms an ergodic layer at the very edge (ψ ≥0.96) characterized by lobe structures near the X-point and results in a small strike point splitting on the divertor targets. In MAST Double Null Divertor geometry, lobes are also found near the X-point and the 3D-deformation of the density and temperature profiles is observed.

  5. Optimization of negative ion current in a compact microwave driven upper hybrid resonance multicusp plasma source.

    Science.gov (United States)

    Sahu, D; Bhattacharjee, S; Singh, M J; Bandyopadhyay, M; Chakraborty, A

    2012-02-01

    Performance of a microwave driven upper hybrid resonance multicusp plasma source as a volume negative ion source is reported. Microwaves are directly launched into the plasma chamber predominantly in the TE(11) mode. The source is operated at different discharge conditions to obtain the optimized negative H(-) ion current which is ∼33 μA (0.26 mA∕cm(2)). Particle balance equations are solved to estimate the negative ion density, which is compared with the experimental results. Future prospects of the source are discussed.

  6. Optimization of negative ion current in a compact microwave driven upper hybrid resonance multicusp plasma sourcea)

    Science.gov (United States)

    Sahu, D.; Bhattacharjee, S.; Singh, M. J.; Bandyopadhyay, M.; Chakraborty, A.

    2012-02-01

    Performance of a microwave driven upper hybrid resonance multicusp plasma source as a volume negative ion source is reported. Microwaves are directly launched into the plasma chamber predominantly in the TE11 mode. The source is operated at different discharge conditions to obtain the optimized negative H- ion current which is ˜33 μA (0.26 mA/cm2). Particle balance equations are solved to estimate the negative ion density, which is compared with the experimental results. Future prospects of the source are discussed.

  7. MM-wave cyclotron auto-resonance maser for plasma heating

    Energy Technology Data Exchange (ETDEWEB)

    Ceccuzzi, S.; Ravera, G. L.; Tuccillo, A. A. [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via Enrico Fermi 45, 00044, Frascati, Roma (Italy); Dattoli, G.; Di Palma, E.; Doria, A.; Gallerano, G. P.; Giovenale, E.; Spassovsky, I.; Surrenti, V. [ENEA UTAPRAD, C.R. Frascati, Via Enrico Fermi 45, 00044, Frascati, Roma (Italy); Mirizzi, F. [Consorzio CREATE, Via Claudio 21, 80125, Napoli (Italy)

    2014-02-12

    Heating and Current Drive systems are of outstanding relevance in fusion plasmas, magnetically confined in tokamak devices, as they provide the tools to reach, sustain and control burning conditions. Heating systems based on the electron cyclotron resonance (ECRH) have been extensively exploited on past and present machines DEMO, and the future reactor will require high frequencies. Therefore, high power (≥1MW) RF sources with output frequency in the 200 - 300 GHz range would be necessary. A promising source is the so called Cyclotron Auto-Resonance Maser (CARM). Preliminary results of the conceptual design of a CARM device for plasma heating, carried out at ENEA-Frascati will be presented together with the planned R and D development.

  8. MM-wave cyclotron auto-resonance maser for plasma heating

    Science.gov (United States)

    Ceccuzzi, S.; Dattoli, G.; Di Palma, E.; Doria, A.; Gallerano, G. P.; Giovenale, E.; Mirizzi, F.; Spassovsky, I.; Ravera, G. L.; Surrenti, V.; Tuccillo, A. A.

    2014-02-01

    Heating and Current Drive systems are of outstanding relevance in fusion plasmas, magnetically confined in tokamak devices, as they provide the tools to reach, sustain and control burning conditions. Heating systems based on the electron cyclotron resonance (ECRH) have been extensively exploited on past and present machines DEMO, and the future reactor will require high frequencies. Therefore, high power (≥1MW) RF sources with output frequency in the 200 - 300 GHz range would be necessary. A promising source is the so called Cyclotron Auto-Resonance Maser (CARM). Preliminary results of the conceptual design of a CARM device for plasma heating, carried out at ENEA-Frascati will be presented together with the planned R&D development.

  9. Axisymmetric Alfvén resonances in a multi-component plasma at finite ion gyrofrequency

    Directory of Open Access Journals (Sweden)

    D. Yu. Klimushkin

    2006-05-01

    Full Text Available This paper deals with the spatial structure of zero azimuthal wave number ULF oscillations in a 1-D inhomogeneous multi-component plasma when a finite ion gyrofrequency is taken into account. Such oscillations may occur in the terrestrial magnetosphere as Pc1-3 waves or in the magnetosphere of the planet Mercury. The wave field was found to have a sharp peak on some magnetic surfaces, an analogy of the Alfvén (field line resonance in one-fluid MHD theory. The resonance can only take place for waves with frequencies in the intervals ω<ωch or Ω0<ω< ωcp, where ωch and ωcp are heavy and light ions gyrofrequencies, and Ω0 is a kind of hybrid frequency. Contrary to ordinary Alfvén resonance, the wave resonance under consideration takes place even at the zero azimuthal wave number. The radial component of the wave electric field has a pole-type singularity, while the azimuthal component is finite but has a branching point singularity on the resonance surface. The later singularity can disappear at some frequencies. In the region adjacent to the resonant surface the mode is standing across the magnetic shells.

  10. On the plasma confinement by acoustic resonance. An innovation for electrodeless high-pressure discharge lamps

    Science.gov (United States)

    Courret, Gilles; Nikkola, Petri; Wasterlain, Sébastien; Gudozhnik, Olexandr; Girardin, Michel; Braun, Jonathan; Gavin, Serge; Croci, Mirko; Egolf, Peter W.

    2017-08-01

    In an applied research project on the development of a pulsed microwave sulfur lamp prototype of 1 kW, we have discovered an amazing phenomenon in which the plasma forms a ball staying at the center of the bulb despite gravity, thus protecting the glass from melting. In this paper, it is shown that this results from an acoustic resonance in a spherical mode. Measurements of the plasma response to short pulses are presented showing beats at the spherical resonance. It is demonstrated that the beats could result from the simultaneous excitation of two normal modes with a frequency difference of approximately 1%. One of the two frequencies matches precisely the microwave pulses repetition, a little below 30 kHz. Thus this one is due to a forced oscillation, whereas the other one is due to a free oscillation. The phase velocity of sound was calculated as a function of temperature in order to find the series of temperatures at which a resonance would occur if the bulb were an isothermal solid sphere. The mean temperature inside the actual bulb was determined from the only doublet of this series, that has characteristic frequencies close enough to cause the observed beats. In addition, one of these two modes has a spherical symmetry that can explain the plasma ball formation. The obtained mean temperature is consistent with the direct measurements on the bulb surface as well as with the temperature in the core of a similar plasma found in the literature. We have also proposed a model of the resonance onset based on the acoustic dispersion and the sound amplification due to electromagnetic coupling.

  11. Analysis of radiofrequency discharges in plasma

    Science.gov (United States)

    Kumar, Devendra; McGlynn, Sean P.

    1992-01-01

    Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition.

  12. Design study of electron cyclotron resonance-ion plasma accelerator for heavy ion cancer therapy

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, T., E-mail: ttinoue@juntendo.ac.jp; Sugimoto, S.; Sasai, K. [Graduate School of Medicine, Juntendo University, Tokyo 113–8421 (Japan); Hattori, T. [National Institute of Radiological Sciences, Chiba 263–0024 (Japan)

    2014-02-15

    Electron Cyclotron Resonance-Ion Plasma Accelerator (ECR-IPAC) device, which theoretically can accelerate multiple charged ions to several hundred MeV with short acceleration length, has been proposed. The acceleration mechanism is based on the combination of two physical principles, plasma electron ion adiabatic ejection (PLEIADE) and Gyromagnetic Autoresonance (GYRAC). In this study, we have designed the proof of principle machine ECR-IPAC device and simulated the electromagnetic field distribution generating in the resonance cavity. ECR-IPAC device consisted of three parts, ECR ion source section, GYRAC section, and PLEIADE section. ECR ion source section and PLEIADE section were designed using several multi-turn solenoid coils and sextupole magnets, and GYRAC section was designed using 10 turns coil. The structure of ECR-IPAC device was the cylindrical shape, and the total length was 1024 mm and the maximum diameter was 580 mm. The magnetic field distribution, which maintains the stable acceleration of plasma, was generated on the acceleration center axis throughout three sections. In addition, the electric field for efficient acceleration of electrons was generated in the resonance cavity by supplying microwave of 2.45 GHz.

  13. Study of selective heating at ion cyclotron resonance for the plasma separation process

    Science.gov (United States)

    Compant La Fontaine, A.; Pashkovsky, V. G.

    1995-12-01

    The plasma separation process by ion cyclotron resonance heating (ICRH) is studied both theoretically and experimentally on two devices: the first one called ERIC (Ion Cyclotron Resonance Experiment) at Saclay (France) [P. Louvet, Proceedings of the 2nd Workshop on Separation Phenomena in Liquids and Gases, Versailles, France, 1989, edited by P. Louvet, P. Noe, and Soubbaramayer (Centre d'Etudes Nucléaires de Saclay and Cité Scientifique Parcs et Technopoles, Ile de France Sud, France, 1989), Vol. 1, p. 5] and the other one named SIRENA at the Kurchatov Institute, Moscow, Russia [A. I. Karchevskii et al., Plasma Phys. Rep. 19, 214 (1993)]. The radio frequency (RF) transversal magnetic field is measured by a magnetic probe both in plasma and vacuum and its Fourier spectrum versus the axial wave number kz is obtained. These results are in agreement with the electromagnetic (EM) field calculation model based on resolution of Maxwell equations by a time-harmonic scheme studied here. Various axial boundary conditions models used to compute the EM field are considered. The RF magnetic field is weakly influenced by the plasma while the electric field components are strongly disturbed due to space-charge effects. In the plasma the transversal electric field is enhanced and the kz spectrum is narrower than in vacuum. The calculation of the resonant isotope heating is made by the Runge-Kutta method. The influence of ion-ion collisions, inhomogeneity of the static magnetic field B0, and the RF transversal magnetic field component on the ion acceleration is examined. These results are successfully compared with experiments of a minor isotope 44Ca heating measurements, made with an energy analyzer.

  14. Study of selective heating at ion cyclotron resonance for the plasma separation process

    Energy Technology Data Exchange (ETDEWEB)

    Compant La Fontaine, A. [Direction du Cycle du Combustible/Departement des Procedes d` Enrichissement, Service de Physique, d` Experimentation et d` Analyse, Commissariat a l` Energie Atomique, Centre d` Etudes de Saclay, 91191 Gif-sur-Yvette Cedex (France); Pashkovsky, V.G. [Molecular Physics Institute, RRC Kurchatov Institute 123182, Moscow (Russian Federation)

    1995-12-01

    The plasma separation process by ion cyclotron resonance heating (ICRH) is studied both theoretically and experimentally on two devices: the first one called ERIC (Ion Cyclotron Resonance Experiment) at Saclay (France) [P. Louvet, {ital Proceedings} {ital of} {ital the} 2{ital nd} {ital Workshop} {ital on} {ital Separation} {ital Phenomena} {ital in} {ital Liquids} {ital and} {ital Gases}, Versailles, France, 1989, edited by P. Louvet, P. Noe, and Soubbaramayer (Centre d`Etudes Nucleaires de Saclay and Cite Scientifique Parcs et Technopoles, Ile de France Sud, France, 1989), Vol. 1, p. 5] and the other one named SIRENA at the Kurchatov Institute, Moscow, Russia [A. I. Karchevskii {ital et} {ital al}., Plasma Phys. Rep. {bold 19}, 214 (1993)]. The radio frequency (RF) transversal magnetic field is measured by a magnetic probe both in plasma and vacuum and its Fourier spectrum versus the axial wave number {ital k}{sub {ital z}} is obtained. These results are in agreement with the electromagnetic (EM) field calculation model based on resolution of Maxwell equations by a time-harmonic scheme studied here. Various axial boundary conditions models used to compute the EM field are considered. The RF magnetic field is weakly influenced by the plasma while the electric field components are strongly disturbed due to space-charge effects. In the plasma the transversal electric field is enhanced and the {ital k}{sub {ital z}} spectrum is narrower than in vacuum. The calculation of the resonant isotope heating is made by the Runge--Kutta method. The influence of ion--ion collisions, inhomogeneity of the static magnetic field {ital B}{sub 0}, and the RF transversal magnetic field component on the ion acceleration is examined. These results are successfully compared with experiments of a minor isotope {sup 44}Ca heating measurements, made with an energy analyzer. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  15. Electron transport in the plasma edge with rotating resonant magnetic perturbations at the TEXTOR tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Stoschus, Henning

    2011-10-13

    Small three-dimensional (3D) magnetic perturbations can be used as a tool to control the edge plasma parameters in magnetically confined plasmas in high confinement mode (''H-mode'') to suppress edge instabilities inherent to this regime, the Edge Localized Modes (ELMs). In this work, the impact of rotating 3D resonant magnetic perturbation (RMP) fields on the edge plasma structure characterized by electron density and temperature fields is investigated. We study a low confinement (L-mode) edge plasma (r/a>0.9) with high resistivity (edge electron collisionality {nu}{sup *}{sub e}>4) at the TEXTOR tokamak. The plasma structure in the plasma edge is measured by a set of high resolution diagnostics: a fast CCD camera ({delta}t=20 {mu}s) is set up in order to visualize the plasma structure in terms of electron density variations. A supersonic helium beam diagnostic is established as standard diagnostic at TEXTOR to measure electron density n{sub e} and temperature T{sub e} with high spatial ({delta}r=2 mm) and temporal resolution ({delta}t=20 {mu}s). The measured plasma structure is compared to modeling results from the fluid plasma and kinetic neutral transport code EMC3-EIRENE. A sequence of five new observations is discussed: (1) Imaging of electron density variations in the plasma edge shows that a fast rotating RMP field imposes an edge plasma structure, which rotates with the external RMP rotation frequency of vertical stroke {nu}{sub RMP} vertical stroke =1 kHz. (2) Measurements of the electron density and temperature provide strong experimental evidence that in the far edge a rotating 3D scrape-off layer (SOL) exists with helical exhaust channels to the plasma wall components. (3) Radially inward, the plasma structure at the next rational flux surface is found to depend on the relative rotation between external RMP field and intrinsic plasma rotation. For low relative rotation the plasma structure is dominated by a particle and energy loss

  16. Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

    OpenAIRE

    Prado,Mariana C.; Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C.

    2013-01-01

    Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing ...

  17. Production of electron cyclotron resonance plasma by using multifrequencies microwaves and active beam profile control on a large bore electron cyclotron resonance ion source with permanent magnets.

    Science.gov (United States)

    Kato, Yushi; Watanabe, Takeyoshi; Matsui, Yuuki; Hirai, Yoshiaki; Kutsumi, Osamu; Sakamoto, Naoki; Sato, Fuminobu; Iida, Toshiyuki

    2010-02-01

    A new concept on magnetic field with all magnets on plasma production and confinement has been proposed to enhance efficiency of an electron cyclotron resonance (ECR) plasma for broad and dense ion beam source under the low pressure. The magnetic field configuration is constructed by a pair of magnets assembly, i.e., comb-shaped magnet which cylindrically surrounds the plasma chamber. The resonance zones corresponding to the fundamental ECR for 2.45 GHz and 11-13 GHz frequencies are constructed at different positions. The profiles of the plasma parameters in the ECR ion source are different from each frequency of microwave. Large bore extractor is set at the opposite side against the microwave feeds. It is found that differences of their profiles also appear at those of ion beam profiles. We conducted to launch simultaneously multiplex frequencies microwaves controlled individually, and tried to control the profiles of the plasma parameters and then those of extracted ion beam.

  18. Effect of resonant magnetic perturbations on ELMs in connected double null plasmas in MAST

    Science.gov (United States)

    Kirk, A.; Liu, Yueqiang; Chapman, I. T.; Harrison, J.; Nardon, E.; Scannell, R.; Thornton, A. J.; the MAST Team

    2013-04-01

    The application of resonant magnetic perturbations (RMPs) with a toroidal mode number of n = 3 to connected double null plasmas in the MAST tokamak produces up to a factor of 9 increase in edge-localized mode (ELM) frequency and reduction in plasma energy loss associated with type-I ELMs. A threshold current for ELM mitigation is observed above which the ELM frequency increases approximately linearly with current in the coils. The effect of the RMPs is found to be scenario dependent. In one scenario the mitigation is only due to a large density pump out event and if the density is recovered by gas puffing a return to type-I ELMs is observed. In another scenario sustained ELM mitigation can be achieved irrespective of the amount of fuelling. Despite a large scan of parameters complete ELM suppression has not been achieved. The results are compared with modelling performed using either the vacuum approximation or including the plasma response. The requirement for a resonant condition, that is an optimum alignment of the perturbation with the plasma, is confirmed by performing a scan in the pitch angle of the applied field.

  19. Resonant excitation of waves by a spiraling ion beam on the large plasma device

    Science.gov (United States)

    Tripathi, Shreekrishna

    2015-11-01

    The resonant interaction between energetic-ions and plasma waves is a fundamental topic of importance in the space, controlled magnetic-fusion, and laboratory plasma physics. We report new results on the spontaneous generation of traveling shear Alfvén waves and high-harmonic beam-modes in the lower-hybrid range of frequencies by an intense ion beam. In particular, the role of Landau and Doppler-shifted ion-cyclotron resonances (DICR) in extracting the free-energy from the ion-beam and destabilizing Alfvén waves was explored on the Large Plasma Device (LAPD). In these experiments, single and dual-species magnetized plasmas (n ~1010 -1012 cm-3, Te ~ 5.0-10.0 eV, B = 0.6-1.8 kG, He+ and H+ ions, 19.0 m long, 0.6 m diameter) were produced and a spiraling hydrogen ion beam (5-15 keV, 2-10 A, beam-speed/Alfvén-speed = 0.2-1.5, J ~ 50-150 mA/cm2, pitch-angle ~53°) was injected into the plasma. The interaction of the beam with the plasma was diagnosed using a retarding-field energy analyzer, three-axis magnetic-loop, and Langmuir probes. The resonance conditions for the growth of shear Alfvén waves were examined by varying the parameters of the ion-beam and ambient plasma. The experimental results demonstrate that the DICR process is particularly effective in exciting left-handed polarized shear Alfvén waves that propagate in the direction opposite to the ion beam. The high-harmonic beam modes were detected in the vicinity of the spiraling ion beam and contained more than 80 harmonics of Doppler-shifted gyro-frequency of the beam. Work jointly supported by US DOE and NSF and performed at the Basic Plasma Science Facility, UCLA.

  20. Diagnostics of recombining laser plasma parameters based on He-like ion resonance lines intensity ratios

    Science.gov (United States)

    Ryazantsev, S. N.; Skobelev, I. Yu; Faenov, A. Ya; Pikuz, T. A.; Grum-Grzhimailo, A. N.; Pikuz, S. A.

    2016-11-01

    While the plasma created by powerful laser expands from the target surface it becomes overcooled, i.e. recombining one. Improving of diagnostic methods applicable for such plasma is rather important problem in laboratory astrophysics nowadays because laser produced jets are fully scalable to young stellar objects. Such scaling is possible because of the plasma hydrodynamic equations invariance under some transformations. In this paper it is shown that relative intensities of the resonance transitions in He-like ions can be used to measure the parameters of recombining plasma. Intensity of the spectral lines corresponding to these transitions is sensitive to the density in the range of 1016-1020 cm-3 while the temperature ranges from 10 to 100 eV for ions with nuclear charge Zn ∼ 10. Calculations were carried out for F VIII ion and allowed to determine parameters of plasma jets created by nanosecond laser system ELFIE (Ecole Polytechnique, France) for astrophysical phenomenon modelling. Obtained dependencies are quite universal and can be used for any recombining plasma containing He-like fluorine ions.

  1. Resonant-magnetic-perturbation-induced plasma transport in H-mode pedestals

    Energy Technology Data Exchange (ETDEWEB)

    Callen, J. D.; Hegna, C. C. [University of Wisconsin, 1500 Engineering Drive, Madison, Wisconsin 53706-1609 (United States); Cole, A. J. [Columbia University, 201 S.W. Mudd, New York, New York 10027 (United States)

    2012-11-15

    Plasma toroidal rotation reduces reconnection of externally applied resonant magnetic perturbation (RMP) fields {delta}B on rational (q = m/n) magnetic flux surfaces. Hence, it causes radial perturbations {delta}B{sub {rho}m/n} to be small there, and thus inhibits magnetic island formation and stochasticity in the edge of high (H-) mode confinement tokamak plasmas. However, electron collisional damping combined with the spatial magnetic flutter {delta}B{sub {rho}m/n} induced by RMPs in the vicinity of rational surfaces causes a radial electron heat diffusivity in which {chi}{sub e Parallel-To }{sup eff}{approx}(v{sub Te}{sup 2}/{nu}{sub e})/(1+x{sup 2}/{delta}{sub Parallel-To }{sup 2}) is an effective parallel electron thermal diffusivity. These effects are reduced by magnetic shear effects at a distance x from rational surfaces for |x|>{delta}{sub Parallel-To} but amplified for {delta}B-caret{sub {rho}m/n}(x)>{delta}B-caret{sub {rho}m/n}(0). A kinetic, toroidal model of these RMP-flutter-induced plasma transport effects is developed and compared to a previously developed cylindrical model. The RMP-induced increases in plasma transport can be large enough to reduce plasma gradients in H-mode pedestals. Thus, they may contribute to suppressing edge localized modes in tokamak plasmas.

  2. Ultrathin oxide grown on polysilicon by using an electron cyclotron resonance N sub 2 O plasma

    CERN Document Server

    Han, S Y

    2000-01-01

    We have developed a process for growing ultrathin oxide on a polysilicon layer by using an electron cyclotron resonance (ECR) N sub 2 O plasma. Sub-4-nm thick polyoxides were grown on n sup + and p sup + polysilicon layers and were characterized. These oxides had larger breakdown fields, smaller electron trapping characteristics, and larger Q sub B sub D values than those of thermal polyoxides. The electron trapping characteristics of ECR N sub 2 O plasma polyoxides, which were smaller than those of thermal polyoxides at positive bias, resulted from the smaller roughness of the polysilicon surface after the oxidation process. Under a negative constant-current stress of 20 mA/cm sup 2 for polyoxide on p sup + polysilicon were obtained. These ultrathin plasma polyoxides would be good candidates for future inter-poly dielectrics and gate oxides for thin film transistors.

  3. Resonant laser ablation of metals detected by atomic emission in a microwave plasma and by inductively coupled plasma mass spectrometry.

    Science.gov (United States)

    Cleveland, Danielle; Stchur, Peter; Hou, Xiandeng; Yang, Karl X; Zhou, Jack; Michel, Robert G

    2005-12-01

    It has been shown that an increase in sensitivity and selectivity of detection of an analyte can be achieved by tuning the ablation laser wavelength to match that of a resonant gas-phase transition of that analyte. This has been termed resonant laser ablation (RLA). For a pulsed tunable nanosecond laser, the data presented here illustrate the resonant enhancement effect in pure copper and aluminum samples, chromium oxide thin films, and for trace molybdenum in stainless steel samples, and indicate two main characteristics of the RLA phenomenon. The first is that there is an increase in the number of atoms ablated from the surface. The second is that the bandwidth of the wavelength dependence of the ablation is on the order of 1 nm. The effect was found to be virtually identical whether the atoms were detected by use of a microwave-induced plasma with atomic emission detection, by an inductively coupled plasma with mass spectrometric detection, or by observation of the number of laser pulses required to penetrate through thin films. The data indicate that a distinct ablation laser wavelength dependence exists, probably initiated via resonant radiation trapping, and accompanied by collisional broadening. Desorption contributions through radiation trapping are substantiated by changes in crater morphology as a function of wavelength and by the relatively broad linewidth of the ablation laser wavelength scans, compared to gas-phase excitation spectra. Also, other experiments with thin films demonstrate the existence of a distinct laser-material interaction and suggest that a combination of desorption induced by electronic transition (DIET) with resonant radiation trapping could assist in the enhancement of desorption yields. These results were obtained by a detailed inspection of the effect of the wavelength of the ablation laser over a narrow range of energy densities that lie between the threshold of laser-induced desorption of species and the usual analytical

  4. Electron cyclotron resonance ion source plasma chamber studies using a network analyzer as a loaded cavity probe

    Energy Technology Data Exchange (ETDEWEB)

    Toivanen, V.; Tarvainen, O.; Kauppinen, J.; Komppula, J.; Koivisto, H. [Department of Physics, University of Jyvaeskylae, Jyvaeskylae 40500 (Finland); Lyneis, C. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2012-02-15

    A method and first results utilizing a network analyzer as a loaded cavity probe to study the resonance properties of a plasma filled electron cyclotron resonance ion source (ECRIS) plasma chamber are presented. The loaded cavity measurements have been performed using a dual port technique, in which two separate waveguides were used simultaneously. One port was used to ignite and sustain the plasma with a microwave source operating around 11 GHz and the other was used to probe the cavity properties with the network analyzer using a frequency range around 14 GHz. The first results obtained with the JYFL 14 GHz ECRIS demonstrate that the presence of plasma has significant effects on the resonance properties of the cavity. With plasma the frequency dependent behavior is strongly damped and this trend strengthens with increasing microwave power.

  5. Resonant scattering as a sensitive diagnostic of current collisional plasma models

    Science.gov (United States)

    Ogorzalek, Anna; Zhuravleva, Irina; Allen, Steven W.; Pinto, Ciro; Werner, Norbert; Mantz, Adam; Canning, Rebecca; Fabian, Andrew C.; Kaastra, Jelle S.; de Plaa, Jelle

    2017-08-01

    Resonant scattering is a subtle process that suppresses fluxes of some of the brightest optically thick X-ray emission lines produced by collisional plasmas in galaxy clusters and massive early-type galaxies. The amplitude of the effect depends on the turbulent structure of the hot gas, making it a sensitive velocity probe. It is therefore crucial to properly model this effect in order to correctly interpret high resolution X-ray spectra. Our measurements of resonant scattering with XMM-Newton Reflection Grating Spectrometer in giant elliptical galaxies and with Hitomi in the center of Perseus Cluster show that the potentially rich inference from this effect is limited by the uncertainties in the atomic data underlying plasma codes such as APEC and SPEX. Typically, the effect is of the order of 10-20%, while the discrepancy between the two codes is of similar order or even higher. Precise knowledge of the emissivity and oscillator strengths of lines emitted by Fe XVII and Fe XXV, as well as their respective uncertainties propagated through plasma codes are key to understanding gas dynamics and microphysics in giant galaxies and cluster ICM, respectively. This is especially crucial for massive ellipticals, where sub-eV resolution would be needed to measure line broadening precisely, making resonant scattering an important velocity diagnostic in these systems for the foreseeable future. In this poster, I will summarize current status of resonant scattering measurements and show how they depend on the assumed atomic data. I will also discuss which improvements are essential to maximize scientific inference from future high resolution X-ray spectra.

  6. Resonant shadowgraph and schlieren studies of magnetized laser-produced plasmas

    Science.gov (United States)

    Jellison, G.; Parsons, C. R.

    1981-10-01

    Resonant shadowgraph and schlieren techniques are used to photograph the flow of laser-produced barium plasma, across a magnetic field. The plasma is formed by focusing a CO2 TEA laser onto a solid barium target in a vacuum chamber. Long 7-J pulses and short 2-J pulses are obtained, and the CO2 wavelength is 10.6 microns. A transverse magnetic field of 200-2000 G is provided by electromagnetic coils. The tunable dye laser used for optical diagnostics is pumped by a frequency-doubled Q-switched ruby laser and yields a 10-mJ, 20-nsec pulse with a spectral width of 0.25 A. For the schlieren studies, a knife edge is placed at the laser focal spot, and the camera is focused onto the plasma region. Some of the features in the photographs are understandable in view of previous work, while others are unexpected. The appearance of a narrow collimated beam has been noted in other studies (e.g., Sucov et al., 1967; Bruneteau et al., 1970). It is shown that the traditional concept of polarization drift across the field is applicable to the present experiment. The slow plasma component displays internal striations, which are interpreted as shock waves excited by the plasma.

  7. Suppression of runaway electrons with a resonant magnetic perturbation in MST tokamak plasmas

    Science.gov (United States)

    Munaretto, Stefano; Chapman, B. E.; Almagri, A. F.; Cornille, B. S.; Dubois, A. M.; Goetz, J. A.; McCollam, K. J.; Sovinec, C. R.

    2016-10-01

    Runaway electrons generated in MST tokamak plasmas are now being probed with resonant magnetic perturbations (RMP's). An RMP with m =3 strongly suppresses the runaway electrons. Initial modeling of these plasmas with NIMROD shows the degradation of flux surfaces with an m =3 RMP, which may account for the runaway electron suppression. These MST tokamak plasmas have Bt =0.14 T, Ip =50kA, and q(a) =2.2, with a bulk electron density and temperature of 5x1017 m-3 and 150 eV. Runaway electrons are detected via x-ray emission. The RMP is produced by a poloidal array of 32 saddle coils at the narrow vertical insulated cut in MST's thick conducting shell. Each RMP has a single m but a broad n spectrum. A sufficiently strong m =3 RMP completely suppresses the runaway electrons, while a comparable m =1 RMP has little effect. The impact of the RMP's on the magnetic topology of these plasmas is being studied with the nonlinear MHD code, NIMROD. With an m =3 RMP, stochasticity is introduced in the outer third of the plasma. No such change is observed with the m =1 RMP. NIMROD also predicts regularly occurring sawtooth oscillations with a period comparable to MHD activity observed in the experiment. Work supported by USDOE.

  8. Pulsed microwave-driven argon plasma jet with distinctive plume patterns resonantly excited by surface plasmon polaritons

    Institute of Scientific and Technical Information of China (English)

    陈兆权; 殷志祥; 夏广庆; 洪伶俐; 胡业林; 刘明海; 胡希伟

    2015-01-01

    Atmospheric lower-power pulsed microwave argon cold plasma jets are obtained by using coaxial transmission line resonators in ambient air. The plasma jet plumes are generated at the end of a metal wire placed in the middle of the dielec-tric tubes. The electromagnetic model analyses and simulation results suggest that the discharges are excited resonantly by the enhanced electric field of surface plasmon polaritons. Moreover, for conquering the defect of atmospheric argon filamentation discharges excited by 2.45-GHz continued microwave, the distinctive patterns of the plasma jet plumes can be maintained by applying different gas flow rates of argon gas, frequencies of pulsed modulator, duty cycles of pulsed microwave, peak values of input microwave power, and even by using different materials of dielectric tubes. In addition, the emission spectrum, the plume temperature, and other plasma parameters are measured, which shows that the proposed pulsed microwave plasma jets can be adjusted for plasma biomedical applications.

  9. Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Boffard, John B., E-mail: jboffard@wisc.edu; Lin, Chun C. [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Culver, Cody [Materials Science Program, University of Wisconsin, Madison, WI 53706 (United States); Wang, Shicong; Wendt, Amy E. [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706 (United States); Radovanov, Svetlana; Persing, Harold [Varian Semiconductor Equipment, Applied Materials Inc., Gloucester, MA 01939 (United States)

    2014-03-15

    Vacuum ultraviolet (VUV) photons emitted from excited atomic states are ubiquitous in material processing plasmas. The highly energetic photons can induce surface damage by driving surface reactions, disordering surface regions, and affecting bonds in the bulk material. In argon plasmas, the VUV emissions are due to the decay of the 1s{sub 4} and 1s{sub 2} principal resonance levels with emission wavelengths of 104.8 and 106.7 nm, respectively. The authors have measured the number densities of atoms in the two resonance levels using both white light optical absorption spectroscopy and radiation-trapping induced changes in the 3p{sup 5}4p→3p{sup 5}4s branching fractions measured via visible/near-infrared optical emission spectroscopy in an argon inductively coupled plasma as a function of both pressure and power. An emission model that takes into account radiation trapping was used to calculate the VUV emission rate. The model results were compared to experimental measurements made with a National Institute of Standards and Technology-calibrated VUV photodiode. The photodiode and model results are in generally good accord and reveal a strong dependence on the neutral gas temperature.

  10. Effect of resonant magnetic perturbations on ELMs in connected double null plasmas in MAST

    CERN Document Server

    Kirk, A; Chapman, I T; Harrison, J; Nardon, E; Scannell, R; Thornton, A J

    2013-01-01

    The application of resonant magnetic perturbations (RMPs) with a toroidal mode number of n=3 to connected double null plasmas in the MAST tokamak produces up to a factor of 9 increase in Edge Localized Mode (ELM) frequency and reduction in plasma energy loss associated with type-I ELMs. A threshold current for ELM mitigation is observed above which the ELM frequency increases approximately linearly with current in the coils. The effect of the RMPs is found to be scenario dependent. In one scenario the mitigation is only due to a large density pump out event and if the density is recovered by gas puffing a return to type I ELMs is observed. In another scenario sustained ELM mitigation can be achieved irrespective of the amount of fuelling. Despite a large scan of parameters complete ELM suppression has not been achieved. The results have been compared to modelling performed using either the vacuum approximation or including the plasma response. The requirement for a resonant condition, that is an optimum align...

  11. Superhydrophobicity on transparent fluorinated ethylene propylene films with nano-protrusion morphology by Ar + O2 plasma etching: Study of the degradation in hydrophobicity after exposure to the environment

    Science.gov (United States)

    Gupta, Nitant; Kavya, M. V.; Singh, Yogesh R. G.; Jyothi, J.; Barshilia, Harish C.

    2013-10-01

    Fluorinated ethylene propylene (FEP) films were made superhydrophobic by Ar + O2 plasma etching process. Field emission scanning electron microscopy and atomic force microscopy studies of the plasma-treated FEP samples detected the presence of uniformly distributed nano-protrusions exhibiting a low surface roughness necessary for maintaining the transparency of the samples. In fact, optical transmittance measurements showed an improvement in the transparency of FEP samples after plasma treatment. The X-ray photoelectron spectroscopic analysis showed the presence of -CFx-O-CFx- (x = 1, 2, or 3) linkages in both untreated and plasma-treated samples which explains the hydrophilic nature (contact angle below 90°) of the untreated sample. Fourier transform infrared spectroscopy showed no changes in the bulk properties of the plasma-treated samples. Moreover, exposure to the environment caused the surfaces to lose their superhydrophobic property in an indefinite amount of time. This has been further studied through a water immersion experiment and explained through the wetting state transition from Cassie state to Wenzel state.

  12. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  13. An investigation of resonances in e{sup +}-H scattering embedded in Debye plasma

    Energy Technology Data Exchange (ETDEWEB)

    Ning, Ye; Yan, Zong-Chao [Department of Physics, University of New Brunswick, Fredericton, New Brunswick E3B 5A3 (Canada); Ho, Yew Kam [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan (China)

    2015-01-15

    We carry out calculations for S-wave and P-wave resonances in e{sup +}-H scattering in weakly coupled Debye plasma in which the interaction between two charged particles is represented by a screened Coulomb potential. We employ the complex-scaling method with Hylleraas-type basis set to take correlation effects into account. In the complex-scaling treatment of the screened Coulomb potential, we first perform a Taylor series expansion for the exponential function that contains the distance r between two particles into a polynomial with various powers r{sup n}. We then make the complex scaling transformation of r→r e{sup iθ} in the expansion. The complex resonant eigenvalues are obtained by searching for stabilized points in the complex energy plane with respect to the changes of rotational angle θ and other parameters in the basis set.

  14. Properties of the ion-ion hybrid resonator in fusion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Morales, George J. [Univ. of California, Los Angeles, CA (United States)

    2015-10-06

    The project developed theoretical and numerical descriptions of the properties of ion-ion hybrid Alfvén resonators that are expected to arise in the operation of a fusion reactor. The methodology and theoretical concepts were successfully compared to observations made in basic experiments in the LAPD device at UCLA. An assessment was made of the excitation of resonator modes by energetic alpha particles for burning plasma conditions expected in the ITER device. The broader impacts included the generation of basic insight useful to magnetic fusion and space science researchers, defining new avenues for exploration in basic laboratory experiments, establishing broader contacts between experimentalists and theoreticians, completion of a Ph.D. dissertation, and promotion of interest in science through community outreach events and classroom instruction.

  15. Second-Order Nonlinearity in Triangular Lattice Perforated Gold Film due to Surface Plasmas Resonance

    Directory of Open Access Journals (Sweden)

    Renlong Zhou

    2014-01-01

    Full Text Available We have studied the excitation second-order nonlinearity through a triangular lattice perforated gold film instead of square lattice in many papers. Under the excitation of surface plasmas resonance effect, the second order nonlinearity exists in the noncentrosymmetric split-ring resonators arrays. Reflection of fundamental frequency wave through a triangular lattice perforated gold film is obtained. We also described the second harmonic conversion efficiencies in the second order nonlinear optical process with the spectra. Moreover, the electric field distributions of fundamental frequency above the gold film region are calculated. The light propagation through the holes results in the enhancement of the second order nonlinearity including second harmonic generation as well as the sum (difference frequency generation.

  16. Non-resonant interacting ion acoustic waves in a magnetized plasma

    Energy Technology Data Exchange (ETDEWEB)

    Maccari, Attilio [Technical Institute ' G Cardano' , Monterotondo, Rome (Italy)

    1999-01-29

    We perform an analytical and numerical investigation of the interaction among non-resonant ion acoustic waves in a magnetized plasma. Waves are supposed to be non-resonant, i.e. with different group velocities that are not close to each other. We use an asymptotic perturbation method, based on Fourier expansion and spatio-temporal rescaling. We show that the amplitude slow modulation of Fourier modes cannot be described by the usual nonlinear Schroedinger equation but by a new model system of nonlinear evolution equations. This system is C-integrable, i.e. it can be linearized through an appropriate transformation of the dependent and independent variables. We demonstrate that a subclass of solutions gives rise to envelope solitons. Each envelope soliton propagates with its own group velocity. During a collision solitons maintain their shape, the only change being a phase shift. Numerical results are used to check the validity of the asymptotic perturbation method. (author)

  17. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  18. On the self-excitation mechanisms of Plasma Series Resonance oscillations in single- and multi-frequency capacitive discharges

    CERN Document Server

    Schuengel, Edmund; Korolov, Ihor; Derzsi, Aranka; Donko, Zoltan; Schulze, Julian

    2016-01-01

    The self-excitation of plasma series resonance (PSR) oscillations is a prominent feature in the current of low pressure capacitive radio frequency (RF) discharges. This resonance leads to high frequency oscillations of the charge in the sheaths and enhances electron heating. Up to now, the phenomenon has only been observed in asymmetric discharges. There, the nonlinearity in the voltage balance, which is necessary for the self-excitation of resonance oscillations with frequencies above the applied frequencies, is caused predominantly by the quadratic contribution to the charge-voltage relation of the plasma sheaths. Using PIC/MCC simulations of single- and multi- frequency capacitive discharges and an equivalent circuit model, we demonstrate that other mechanisms such as a cubic contribution to the charge-voltage relation of the plasma sheaths and the time dependent bulk electron plasma frequency can cause the self-excitation of PSR oscillations, as well. These mechanisms have been neglected in previous model...

  19. The parametric resonance features for theory of energy transfer in dusty plasma

    Science.gov (United States)

    Semyonov, V. P.; Timofeev, A. V.

    2015-11-01

    One of the mechanisms of energy transfer between degrees of freedom of dusty plasma system can be described by equations similar to Mathieu equation with account of stochastic forces. Such equation is studied by analytical approach. The solutions for higher order of accuracy are obtained. The method for numerical solution and resonance zone detection is proposed. The solution for the extended Mathieu equation is obtained for wide range of parameter values. The results of numerical solution are compared with analytical solutions of different order and known analytical results for Mathieu equation.

  20. Strong higher-order resonant contributions to x-ray line polarization in hot plasmas

    CERN Document Server

    Shah, Chintan; Steinbrügge, Rene; Beilmann, Christian; Bernitt, Sven; Fritzsche, Stephan; Surzhykov, Andrey; López-Urrutia, José R Crespo; Tashenov, Stanislav

    2016-01-01

    We studied angular distributions of x rays emitted in resonant recombination of highly charged iron and krypton ions, resolving dielectronic, trielectronic, and quadruelectronic channels. A tunable electron beam drove these processes, inducing x rays registered by two detectors mounted along and perpendicular to the beam axis. The measured emission asymmetries comprehensively benchmarked full-order atomic calculations. We conclude that accurate polarization diagnostics of hot plasmas can only be obtained under the premise of inclusion of higher-order processes that were neglected in earlier work.

  1. Preliminary Analysis of the Hysteresis Phenomenon in Electron Cyclotron Resonance Plasma

    Institute of Scientific and Technical Information of China (English)

    LIU Ming-Hai; HU Xi-Wei; YU Guo-Yang; WU Qin-Chong; PAN Yuan

    2001-01-01

    The hysteresis phenomenon in electron cyclotron resonance plasma has been investigated theoretically by solvingthe equations of the density and energy balance of electrons and by taking the effects of several collisions suchas ionization and recombination into account. The results show that multiple steady states in experimentalmeasurements can be characterized by considering the fact that the energy balance function has three differentreal roots in certain regions of parameters. One root represents a saddle point and other roots represent stablepoints, that is, the system is bistable. The effects of ionization and the energy transformation due to the collisionsbetween the electron and neutral gas are also discussed.

  2. Fractional Boltzmann equation for multiple scattering of resonance radiation in low-temperature plasma

    Energy Technology Data Exchange (ETDEWEB)

    Uchaikin, V V; Sibatov, R T, E-mail: vuchaikin@gmail.com, E-mail: ren_sib@bk.ru [Ulyanovsk State University, 432000, 42 Leo Tolstoy str., Ulyanovsk (Russian Federation)

    2011-04-08

    The fractional Boltzmann equation for resonance radiation transport in plasma is proposed. We start with the standard Boltzmann equation; averaging over photon frequencies leads to the appearance of a fractional derivative. This fact is in accordance with the conception of latent variables leading to hereditary and non-local dynamics (in particular, fractional dynamics). The presence of a fractional material derivative in the equation is concordant with heavy tailed distribution of photon path lengths and with spatiotemporal coupling peculiar to the process. We discuss some methods of solving the obtained equation and demonstrate numerical results in some simple cases.

  3. Plasma-induced magnetic responses during nonlinear dynamics of magnetic islands due to resonant magnetic perturbations

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Seiya, E-mail: n-seiya@kobe-kosen.ac.jp [Kobe City College of Technology, Kobe, Hyogo 651-2194 (Japan)

    2014-12-15

    Resonant magnetic perturbations (RMPs) produce magnetic islands in toroidal plasmas. Self-healing (annihilation) of RMP-induced magnetic islands has been observed in helical systems, where a possible mechanism of the self-healing is shielding of RMP penetration by plasma flows, which is well known in tokamaks. Thus, fundamental physics of RMP shielding is commonly investigated in both tokamaks and helical systems. In order to check this mechanism, detailed informations of magnetic island phases are necessary. In experiments, measurement of radial magnetic responses is relatively easy. In this study, based on a theoretical model of rotating magnetic islands, behavior of radial magnetic fields during the self-healing is investigated. It is confirmed that flips of radial magnetic fields are typically observed during the self-healing. Such behavior of radial magnetic responses is also observed in LHD experiments.

  4. Optimization of a coaxial electron cyclotron resonance plasma thruster with an analytical model

    Science.gov (United States)

    Cannat, F.; Lafleur, T.; Jarrige, J.; Chabert, P.; Elias, P.-Q.; Packan, D.

    2015-05-01

    A new cathodeless plasma thruster currently under development at Onera is presented and characterized experimentally and analytically. The coaxial thruster consists of a microwave antenna immersed in a magnetic field, which allows electron heating via cyclotron resonance. The magnetic field diverges at the thruster exit and forms a nozzle that accelerates the quasi-neutral plasma to generate a thrust. Different thruster configurations are tested, and in particular, the influence of the source diameter on the thruster performance is investigated. At microwave powers of about 30 W and a xenon flow rate of 0.1 mg/s (1 SCCM), a mass utilization of 60% and a thrust of 1 mN are estimated based on angular electrostatic probe measurements performed downstream of the thruster in the exhaust plume. Results are found to be in fair agreement with a recent analytical helicon thruster model that has been adapted for the coaxial geometry used here.

  5. Optimization of a coaxial electron cyclotron resonance plasma thruster with an analytical model

    Energy Technology Data Exchange (ETDEWEB)

    Cannat, F., E-mail: felix.cannat@onera.fr, E-mail: felix.cannat@gmail.com; Lafleur, T. [Physics and Instrumentation Department, Onera -The French Aerospace Lab, Palaiseau, Cedex 91123 (France); Laboratoire de Physique des Plasmas, CNRS, Sorbonne Universites, UPMC Univ Paris 06, Univ Paris-Sud, Ecole Polytechnique, 91128 Palaiseau (France); Jarrige, J.; Elias, P.-Q.; Packan, D. [Physics and Instrumentation Department, Onera -The French Aerospace Lab, Palaiseau, Cedex 91123 (France); Chabert, P. [Laboratoire de Physique des Plasmas, CNRS, Sorbonne Universites, UPMC Univ Paris 06, Univ Paris-Sud, Ecole Polytechnique, 91128 Palaiseau (France)

    2015-05-15

    A new cathodeless plasma thruster currently under development at Onera is presented and characterized experimentally and analytically. The coaxial thruster consists of a microwave antenna immersed in a magnetic field, which allows electron heating via cyclotron resonance. The magnetic field diverges at the thruster exit and forms a nozzle that accelerates the quasi-neutral plasma to generate a thrust. Different thruster configurations are tested, and in particular, the influence of the source diameter on the thruster performance is investigated. At microwave powers of about 30 W and a xenon flow rate of 0.1 mg/s (1 SCCM), a mass utilization of 60% and a thrust of 1 mN are estimated based on angular electrostatic probe measurements performed downstream of the thruster in the exhaust plume. Results are found to be in fair agreement with a recent analytical helicon thruster model that has been adapted for the coaxial geometry used here.

  6. Plasma breakdown diagnostics with the biased disc of electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O; Ropponen, T; Toivanen, V; Arje, J; Koivisto, H [University of Jyvaeskylae, Department of Physics, Accelerator Laboratory, PO Box 35 (YFL), 40500 Jyvaeskylae (Finland)], E-mail: olli.tarvainen@jyu.fi

    2009-08-15

    The electron cyclotron resonance ion sources at the JYFL (University of Jyvaeskylae, Department of Physics) accelerator laboratory have been operated in pulsed mode to study the time-resolved current signal from the biased discs of the ion sources. The purpose of the experiments is to gain an understanding of the ion source parameters affecting the time required for the transition from neutral gas to plasma. It was observed that the plasma breakdown time depends strongly on the neutral gas density, gas species and density of seed electrons. In particular, it was observed that a low power microwave signal at secondary frequency makes the breakdown time virtually independent of the neutral gas density. The results can be utilized for operation of ECR ion sources in the so-called preglow mode. A simple qualitative model, which is in good agreement with the experiments, has been developed to interpret the results.

  7. Kinetic model of stimulated emission created by resonance pumping of aluminum laser-induced plasma

    Science.gov (United States)

    Gornushkin, I. B.; Kazakov, A. Ya.

    2017-06-01

    Stimulated emission observed experimentally in an aluminum laser induced plasma is modeled via a kinetic approach. The simulated emission at several cascade transitions is created by a pump laser guided through the plasma at several microseconds after its creation and tuned in resonance with the strong 3s23p-3s24s transition at 266 nm. A two-dimensional space-time collisional radiative plasma model explains the creation of the population inversion and lasing at wavelengths of 2100 n m and 396.1 nm. The population inversion for lasing at 2100 n m is created by depopulation of the ground 3s23p state and population of the 3s25s state via the absorption of the resonant radiation at 266 nm. The population inversion for lasing at 396.1 nm occurs during the laser pulse via the decay of the population of the pumped 3s25s state to the excited 3s24s state via cascade transitions driven optically and by collisions. In particular, efficient are the mixing transitions between neighboring states separated by small gaps on the order of k T at plasma temperatures of 5000-10 000 K. The model predicts that the population inversion and corresponding gain may reach high values even at very moderate pump energy of several μJ per pulse. The efficiency of lasing at 2100 n m and 396.1 nm is estimated to be ˜3% and 0.05%, correspondingly with respect to the pump laser intensity. The gain for lasing at 396.1 nm can reach as high as ˜40 cm-1. The polarization effect that the pump radiation at 266 nm imposes on the stimulated emission at 396.1 nm is discussed. The calculated results are favorably compared to experimental data.

  8. Characteristics of electron cyclotron resonance plasma formed by lower hybrid current drive grill antenna

    Indian Academy of Sciences (India)

    P K Sharma; S L Rao; K Mishra; R G Trivedi; D Bora

    2008-03-01

    A 3.7 GHz system, which is meant for LHCD experiments on ADITYA tokamak, is used for producing ECR discharge. The ECR discharge is produced by setting the appropriate resonance magnetic field of 0.13 T, with hydrogen at a fill pressure of about 5 × 10-5 Torr. The RF powe r, up to 10 kW (of which ∼ 50% is reflected back), with a typical pulse length of 50 ms, is injected into the vacuum chamber of the ADITYA tokamak by a LHCD grill antenna and is used for plasma formation. The average coupled RF power density (the RF power/a typical volume of the plasma) is estimated to be ∼ 5 kW/m3. When the ECR appears inside the tokamak chamber for the given pumping frequency ( = 3.7 GHz) a plasma with a density () ∼ 4 × 1016 m-3 and electron temperature ∼ 8 eV is produced. The density and temperature during the RF pulse are measured by sets of Langmuir probes, located toroidally, on either side of the antenna. signals are also monitored to detect ionization. An estimate of density and temperature based on simple theoretical calculation agrees well with our experimental measurements. The plasma produced by the above mechanism is further used to characterize the ECR-assisted low voltage Ohmic start-up discharges. During this part of the experiments, Ohmic plasma is formed using capacitor banks. The plasma loop voltage is gradually decreased, till the discharge ceases to form. The same is repeated in the presence of ECR-formed plasma (RF pre-ionization), formed 10 ms prior to the loop voltage. We have observed that (with LHCD-induced) ECR-assisted Ohmic start-up discharges is reliably and repeatedly obtained with reduced loop voltage requirement and breakdown time decreases substantially. The current ramp-up rates also decrease with reduced loop voltage operation. These studies established that ECR plasma formed with LHCD system exhibits similar characteristics as reported earlier by dedicated ECR systems. This experiment also addresses the issue of whether ECR plasma

  9. Layer-by-layer etching of LaAlSiO x

    Science.gov (United States)

    Omura, Mitsuhiro; Furumoto, Kazuhito; Matsuda, Kazuhisa; Sasaki, Toshiyuki; Sakai, Itsuko; Hayashi, Hisataka

    2017-06-01

    Layer-by-layer etching of LaAlSiO x using surface modification and selective removal steps was investigated. Selective removal of the LaAlSiO x layer modified by H2 plasma treatment was achieved by bias-power-adjusted C4F8/Ar plasma treatment. Self-limiting etching of LaAlSiO x with respect to the C4F8/Ar plasma step time was realized by initializing the chamber condition using O2 plasma. It was possible to control the saturation etching depth by changing the ion energy of the H2 plasma treatment. The repeatability of the self-limiting etching was confirmed, and the etching depth per cycle was about 0.6 nm. Layer-by-layer etching of LaAlSiO x was thus successfully realized using a three-step sequential process employing H2, C4F8/Ar and O2 plasmas.

  10. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  11. White spot lesions: Does etching really matter?

    Science.gov (United States)

    Abufarwa, Moufida; Voorhees, Robert D; Varanasi, Venu G; Campbell, Phillip M; Buschang, Peter H

    2017-08-01

    The clinical significance of acid etching prior to orthodontic bonding is controversial. In the present study, we evaluated the effect of 15 seconds of acid etching on enamel demineralization. Twenty-seven human molars were sectioned and assigned to two groups. Under standardized conditions, the enamel surfaces were imaged using FluoreCam to obtain baseline data. Group 1 was etched using 37% phosphoric acid for 15 seconds, rinsed with water, and then imaged again; group 2 was only rinsed with water. Water rinse was collected for calcium chemical analysis using inductively-coupled plasma auger electron spectrometry. Both groups were subjected to 9 days of pH cycling, after which final FluoreCam images were obtained. Group 1 showed a significant increase in lesion area (P=.012), decrease in light intensity (P=.009), and decrease in impact (P=.007) after acid etching. The amount of calcium that leached out over the 15 seconds was 14 ppm ±2.4 (0.35 mmol/L±0.06). Following pH cycling, there was no statistically-significant between-group difference in overall enamel demineralization. Initial demineralization caused by 15 seconds of acid etching does not increase enamel susceptibility to further demineralization. This suggests that acid etching does not increase the risk of developing white spot lesions during orthodontics. © 2017 John Wiley & Sons Australia, Ltd.

  12. Laser interaction based on resonance saturation (LIBORS): an alternative to inverse bremsstrahlung for coupling laser energy into a plasma.

    Science.gov (United States)

    Measures, R M; Drewell, N; Cardinal, P

    1979-06-01

    Resonance saturation represents an efficient and rapid method of coupling laser energy into a gaseous medium. In the case of a plasma superelastic collision quenching of the laser maintained resonance state population effectively converts the laser beam energy into translational energy of the free electrons. Subsequently, ionization of the laser pumped species rapidly ensues as a result of both the elevated electron temperature and the effective reduction of the ionization energy for those atoms maintained in the resonance state by the laser radiation. This method of coupling laser energy into a plasma has several advantages over inverse bremsstrahlung and could therefore be applicable to several areas of current interest including plasma channel formation for transportation of electron and ion beams, x-ray laser development, laser fusion, negative ion beam production, and the conversion of laser energy to electricity.

  13. Nanoscale femtosecond imaging of transient hot solid density plasmas with elemental and charge state sensitivity using resonant coherent diffraction

    CERN Document Server

    Kluge, Thomas; Chung, H -K; Gutt, C; Huang, L G; Zacharias, M; Schramm, U; Cowan, T E

    2015-01-01

    Here we propose to exploit the low energy bandwidth, small wavelength and penetration power of ultrashort pulses from XFELs for resonant Small Angle Scattering (SAXS) on plasma structures in laser excited plasmas. Small angle scattering allows to detect nanoscale density fluctuations in forward scattering direction. Typically, the SAXS signal from laser excited plasmas is expected to be dominated by the free electron distribution. We propose that the ionic scattering signal becomes visible when the X-ray energy is in resonance with an electron transition between two bound states (Resonant coherent X-ray diffraction, RCXD). In this case the scattering cross-section dramatically increases so that the signal of X-ray scattering from ions silhouettes against the free electron scattering background which allows to measure the opacity and derived quantities with high spatial and temporal resolution, being fundamentally limited only by the X-ray wavelength and timing. Deriving quantities such as ion spatial distribu...

  14. Zwitterionic polymer-modified silicon microring resonators for label-free biosensing in undiluted human plasma.

    Science.gov (United States)

    Kirk, James T; Brault, Norman D; Baehr-Jones, Tom; Hochberg, Michael; Jiang, Shaoyi; Ratner, Daniel M

    2013-04-15

    A widely acknowledged goal in personalized medicine is to radically reduce the costs of highly parallelized, small fluid volume, point-of-care and home-based diagnostics. Recently, there has been a surge of interest in using complementary metal-oxide-semiconductor (CMOS)-compatible silicon photonic circuits for biosensing, with the promise of producing chip-scale integrated devices containing thousands of orthogonal sensors, at minimal cost on a per-chip basis. A central challenge in biosensor translation is to engineer devices that are both sensitive and specific to a target analyte within unprocessed biological fluids. Despite advances in the sensitivity of silicon photonic biosensors, poor biological specificity at the sensor surface remains a significant factor limiting assay performance in complex media (i.e. whole blood, plasma, serum) due to the non-specific adsorption of proteins and other biomolecules. Here, we chemically modify the surface of silicon microring resonator biosensors for the label-free detection of an analyte in undiluted human plasma. This work highlights the first application of a non-fouling zwitterionic surface coating to enable silicon photonic-based label-free detection of a protein analyte at clinically relevant sensitivities in undiluted human plasma.

  15. Diagnostics of plasma decay and afterglow transient of an electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O; Ropponen, T; Toivanen, V; Kalvas, T; Arje, J; Koivisto, H, E-mail: olli.tarvainen@jyu.f [University of Jyvaeskylae, Department of Physics, Accelerator Laboratory PO Box 35 (YFL), 40500 Jyvaeskylae (Finland)

    2010-08-15

    The electron cyclotron resonance ion sources at the JYFL (University of Jyvaeskylae, Department of Physics) accelerator laboratory have been operated in pulsed mode to study the decay of bremsstrahlung emission and ion beam currents of different charge states. The purpose of the experiments is to gain understanding on the ion source parameters affecting the afterglow. It was observed that the bremsstrahlung emission characteristics during the afterglow and decay times of extracted ion beam currents are virtually independent of the ion source tuning parameters. The decay time of different charge states was found to be almost inversely proportional to the square of the ion charge. The result is in good agreement with a simple theoretical model based on diffusion of ions from the magnetic field of the ion source. It was observed that the plasma decay time is shorter in the case of the ion source with lower operation frequency and, thus, lower magnetic field strength. The scaling between the ion sources supports a model based on Bohm diffusion, arising from non-linear effects such as instabilities and fluctuating fields in turbulent plasma. The experiments provide information on the mechanisms causing instabilities during the plasma decay.

  16. Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching.

    Science.gov (United States)

    Kouno, Tetsuya; Sakai, Masaru; Takeshima, Hoshi; Suzuki, Sho; Kikuchi, Akihiko; Kishino, Katsumi; Hara, Kazuhiko

    2017-04-20

    AlGaN microdisks were fabricated via a top-down process using electron-beam lithography, inductively coupled plasma reactive-ion etching, and hydrogen-environment thermal etching from commercial epitaxial wafers with a 100-300 nm thick AlGaN layer grown on a c-plane GaN layer by metal-organic chemical vapor deposition. The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer. The AlGaN microdisks acted as the whispering gallery mode (WGM) optical microresonators, exhibiting sharp resonant peaks in room temperature photoluminescence spectra. The evanescent component of the whispering gallery mode (WGM) is influenced by the ambient condition of the microdisk, resulting in the shift of the resonant peaks. The phenomenon is considered to be used for microsensors. Using the WGM in the AlGaN microdisks, we demonstrated microsensors and a microsensor system, which can potentially be used to evaluate biological and chemical actions in a microscale area in real time.

  17. Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction

    Science.gov (United States)

    Nozawa, Toshihisa; Miyama, Ryo; Kubota, Shinji; Moyama, Kazuki; Kubota, Tomihiro; Samukawa, Seiji

    2015-03-01

    A neutral beam etching process has been developed that achieves damage- free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH /acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.

  18. A Proposal for a Novel H- Ion Source Based on Electron Cyclotron Resonance Plasma Heating and Surface Ionization

    Science.gov (United States)

    Tarvainen, O.; Kurennoy, S.

    2009-03-01

    A design for a novel H- ion source based on electron cyclotron resonance plasma heating and surface ionization is presented. The plasma chamber of the source is an rf-cavity designed for TE111 eigenmode at 2.45 GHz. The desired mode is excited with a loop antenna. The ionization process takes place on a cesiated surface of a biased converter electrode. The H- ion beam is further "self-extracted" through the plasma region. The magnetic field of the source is optimized for plasma generation by electron cyclotron resonance heating, and beam extraction. The design features of the source are discussed in detail and the attainable H- ion current, beam emittance and duty factor of the novel source are estimated.

  19. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  20. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  1. Individual variation in macronutrient regulation measured by proton magnetic resonance spectroscopy of human plasma.

    Science.gov (United States)

    Park, Youngja; Kim, Seoung Bum; Wang, Bing; Blanco, Roberto A; Le, Ngoc-Anh; Wu, Shaoxiong; Accardi, Carolyn J; Alexander, R Wayne; Ziegler, Thomas R; Jones, Dean P

    2009-07-01

    Proton nuclear magnetic resonance ((1)H-NMR) spectroscopy of plasma provides a global metabolic profiling method that shows promise for clinical diagnostics. However, cross-sectional studies are complicated by a lack of understanding of intraindividual variation, and this limits experimental design and interpretation of data. The present study determined the diurnal variation detected by (1)H NMR spectroscopy of human plasma. Data reduction methods revealed three time-of-day metabolic patterns, which were associated with morning, afternoon, and night. Major discriminatory regions for these time-of-day patterns included the various kinds of lipid signals (-CH(2)- and -CH(2)OCOR), and the region between 3 and 4 ppm heavily overlapped with amino acids that had alpha-CH and alpha-CH(2). The phasing and duration of time-of-day patterns were variable among individuals, apparently because of individual difference in food processing/digestion and absorption and clearance of macronutrient energy sources (fat, protein, carbohydrate). The times of day that were most consistent among individuals, and therefore most useful for cross-sectional studies, were fasting morning (0830-0930), postprandial afternoon (1430-1630), and nighttime samples (0430-0530). Importantly, the integrated picture of metabolism provided by (1)H-NMR spectroscopy of plasma suggests that this approach is suitable to study complex regulatory processes, including eating patterns/eating disorders, upper gastrointestinal functions (gastric emptying, pancreatic, biliary functions), and absorption/clearance of macronutrients. Hence, (1)H-NMR spectroscopy of plasma could provide a global metabolic tolerance test to assess complex processes involved in disease, including eating disorders and the range of physiological processes causing dysregulation of energy homeostasis.

  2. Resonant Damping of Propagating Kink Waves in Time-Dependent Magnetic Flux Tube. I. Zero Plasma-pmb{\\upbeta}

    Science.gov (United States)

    Williamson, A.; Erdélyi, R.

    2014-11-01

    We explore the notion of resonant absorption in a dynamic time-dependent magnetised plasma background. Very many works have investigated resonance in the Alfvén and slow MHD continua under both ideal and dissipative MHD regimes. Jump conditions in static and steady systems have been found in previous works, connecting solutions at both sides of the resonant layer. Here, we derive the jump conditions in a temporally dependent, magnetised, inhomogeneous plasma background to leading order in the Wentzel-Kramers-Billouin (WKB) approximation. Next, we exploit the results found in Williamson and Erdélyi ( Solar Phys. 289, 899, 2014) to describe the evolution of the jump condition in the dynamic model considered. The jump across the resonant point is shown to increase exponentially in time. We determined the damping as a result of the resonance over the same time period and investigated the temporal evolution of the damping itself. We found that the damping coefficient, as a result of the evolution of the resonance, decreases as the density gradient across the transitional layer decreases. This has the consequence that in such time-dependent systems resonant absorption may not be as efficient as time progresses.

  3. Parametric decay instability near the upper hybrid resonance in magnetically confined fusion plasmas

    Science.gov (United States)

    Hansen, S. K.; Nielsen, S. K.; Salewski, M.; Stejner, M.; Stober, J.; the ASDEX Upgrade Team

    2017-10-01

    In this paper we investigate parametric decay of an electromagnetic pump wave into two electrostatic daughter waves, particularly an X-mode pump wave decaying into a warm upper hybrid wave (a limit of an electron Bernstein wave) and a warm lower hybrid wave. We describe the general theory of the above parametric decay instability (PDI), unifying earlier treatments, and show that it may occur in underdense and weakly overdense plasmas. The PDI theory is used to explain anomalous sidebands observed in collective Thomson scattering (CTS) spectra at the ASDEX Upgrade tokamak. The theory may also account for similar observations during CTS experiments in stellarators, as well as in some 1st harmonic electron cyclotron resonance and O-X-B heating experiments.

  4. Beam dynamics in resonant plasma wakefield acceleration at SPARC_LAB

    Science.gov (United States)

    Romeo, S.; Anania, M. P.; Chiadroni, E.; Croia, M.; Ferrario, M.; Marocchino, A.; Pompili, R.; Vaccarezza, C.

    2016-09-01

    Strategies to mitigate the increase of witness emittance and energy spread in beam driven plasma wakefield acceleration are investigated. Starting from the proposed resonant wakefield acceleration scheme in quasi-non-linear regime that is going to be carried out at SPARC_LAB, we performed systematic scans of the parameters to be used for drivers. The analysis will show that one of the main requirements to preserve witness quality during the acceleration is to have accelerating and focusing fields that are very stable during all the accelerating length. The difference between the dynamics of the leading bunch and the trailing bunch is pointed out. The classical condition on bunch length kpσz =√{ 2 } seems to be an ideal condition for the first driver within long accelerating lengths. The other drivers show to follow different longitudinal matching conditions. In the end a new method for the investigation of the matching for the first driver is introduced.

  5. Development and experimental evaluation of theoretical models for ion cyclotron resonance frequency heating of tokamak plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Mantsinen, M. [Helsinki Univ. of Technology, Espoo (Finland). Dept. of Technical Physics

    1999-06-01

    Heating with electromagnetic waves in the ion cyclotron range of frequencies (ICRF) is a well-established method for auxiliary heating of present-day tokamak plasmas and is envisaged as one of the main heating techniques for the International Thermonuclear Experimental Reactor (ITER) and future reactor plasmas. In order to predict the performance of ICRF heating in future machines, it is important to benchmark present theoretical modelling with experimental results on present tokamaks. This thesis reports on development and experimental evaluation of theoretical models for ICRF heating at the Joint European Torus (JET). Several ICRF physics effects and scenarios have been studied. Direct importance to the ITER is the theoretical analysis of ICRF heating experiments with deuterium-tritium (D-T) plasmas. These experiments clearly demonstrate the potential of ICRF heating for auxiliary heating of reactor plasmas. In particular, scenarios with potential for good bulk ion heating and enhanced D-T fusion reactivity have been identified. Good bulk ion heating is essential for reactor plasmas in order to obtain a high ion temperature and a high fusion reactivity. In JET good bulk ion heating with ICRF waves has been achieved in high-performance discharges by adding ICRF heating to neutral beam injection. In these experiments, as in other JET discharges where damping at higher harmonics of the ion cyclotron frequency takes place, so-called finite Larmor radius (FLR) effects play an important role. Due to FLR effects, the resonating ion velocity distribution function can have a strong influence on the power deposition. Evidence for this effect has been obtained from the third harmonic deuterium heating experiments. Because of FLR effects, the wave-particle interaction can also become weak at certain ion energies, which prevents resonating ions from reaching higher energies. When interacting with the wave, an ion receives not only a change in energy but also a change in

  6. 等离子体刻蚀并沉积类金刚石膜制备超疏水木材%Fabrication of superhydrophobic wood by plasma etching and deposition of diamond-like carbon films

    Institute of Scientific and Technical Information of China (English)

    解林坤; 王洪艳; 代沁伶; 杜官本

    2016-01-01

    This study presents the fabrication of superhydrophobic wood of Acer saccharum Marsh. using a combination of O2 plasma etching and plasma deposition of a thin hydrophilic diamond⁃like carbon ( DLC) coating in order to impart wood with controlled wetting properties. The effect of O2 plasma etching on roughness was investigated using the scanning electron microscopy ( SEM) and laser scanning confocal microscope ( LSCM) profilometry. The wetting behavior was de⁃termined by the static water contact angle measurement. Furthermore, the morphology, thickness of deposited films, ele⁃ment composition and their chemical bonding information of the wood surfaces before and after the treatment were also examined with SEM, the ellipsometer and X-ray photoelectron spectroscopy ( XPS) . The results showed that the wood surfaces of the average roughness, root mean square roughness and peak⁃to⁃valley roughness increased with longer etching time within 30 min. However, the wood surface roughness decreased slightly after the prolonged etching time of 45 min. The static water contact angles of the wood surface increased firstly and then decreased with the increase of etch⁃ing time and attained a maximum value for 157�2° with 30 min etching and after depositing DLC film for 1�5 min, but the static water contact angle of the wood surface etched for 45 min and after depositing DLC film for the same time was 152�3° . The static water contact angles decreased gradually with an increase in deposition times if the wood surfaces were subjected to the same time etching. From the data of the deposition thickness, the deposition rate of DLC films was calculated, which was constant (51�7±4�5) nm/min over the deposition times investigated. The content of oxygen ele⁃ment reduced obviously and the diamond⁃like characteristic peaks of sp2-C and sp3-C presented after the wood surfaces deposited with the DLC film coating.%为使木材表面具备疏水性能,采用等离

  7. Apparatus and method for plasma processing of SRF cavities

    CERN Document Server

    Upadhyay, J; Peshl, J; Bašović, M; Popović, S; Valente-Feliciano, A -M; Phillips, L; Vuškovića, L

    2015-01-01

    An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segment...

  8. Ion beam driven resonant ion-cyclotron instability in a magnetized dusty plasma

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Ved; Vijayshri [School of Sciences, Indira Gandhi National Open University, Maidan Garhi, New Delhi 110 068 (India); Sharma, Suresh C. [Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, Bawana Road, Delhi 110 042 (India); Gupta, Ruby [Department of Physics, Swami Shraddhanand College, University of Delhi, Alipur, Delhi 110 036 (India)

    2014-03-15

    Electrostatic ion cyclotron waves are excited by axial ion beam in a dusty plasma via Cerenkov and slow cyclotron interaction. The dispersion relation of the instability is derived in the presence of positively/negatively charged dust grains. The minimum beam velocity needed for the excitation is estimated for different values of relative density of negatively charged dust grains. It is shown that the minimum beam velocity needed for excitation increases as the charge density carried by dust increases. Temperature of electrons and ions, charge and mass of dust grains, external static magnetic field and finite boundary of dusty plasma significantly modify the dispersion properties of these waves and play a crucial role in the growth of resonant ion cyclotron instability. The ion cyclotron modes with phase velocity comparable to the beam velocity possess a large growth rate. The maximum value of growth rate increases with the beam density and scales as the one-third power of the beam density in Cerenkov interaction and is proportional to the square root of beam density in slow cyclotron interaction.

  9. Outer magnetospheric resonances and transport: discrete and turbulent cascades in the dynamic pressure and plasma flux

    Science.gov (United States)

    Savin, Sergey; Büchner, Jörg; Zelenyi, Lev; Kronberg, Elena; Kozak, Lyudmila; Blecki, Jan; Lezhen, Liudmila; Nemecek, Zdenek; Safrankova, Jana; Skalsky, Alexander; Budaev, Vyacheslav; Amata, Ermanno

    We explore interactions of Supersonic Plasma Streams (SPS) with the Earth magnetosphere in the context of the planetary and astrophysical magnetospheres and of that of laboratory plasmas. The interactions can be inherently non-local and non-equilibrium, and even explosive due to both solar wind (SW) induced and self-generated coherent structures in the multiscale system with the scales ranging from the micro to global scales. We concentrate on the main fundamental processes arising from the SPS cascading and interactions with surface and cavity resonances in the Earth’s magnetosphere, using multi-spacecraft data (SPECTR-R, DOUBLE STAR, CLUSTER, GEOTAIL, ACE, WIND etc.). We will address the following key problems to advance our understanding of anomalous transport and boundary dynamics: - generalizations of the SPS generation mechanisms, e.g., by bow shock (BS) surface or magnetosheath (MSH) cavity resonances, triggering by interplanetary shocks, solar wind (SW) dynamic pressure jumps, foreshock nonlinear structures, etc. - the clarification of BS rippling mechanisms requires base on the relevant databases from the CLUSTER/ DOUBLE STAR/ GEOTAIL/SPECTR-R/ ACE/ WIND spacecraft, which will be used for a statistical analysis targeting the SPS statistical features as extreme events. - substantial part of the SW kinetic energy can be pumped into the BS membrane and MSH cavity modes and initiate further cascades towards higher frequencies. Accordingly we present the multipoint studies of the SPS and of related nonlinear discrete cascades (carried generally by the SPS), along with the transformation of discrete cascades of the dynamic pressure into turbulent cascades. - investigation of spectral and bi-spectral cross-correlations in SW, foreshock, MSH and in vicinity of BS and magnetopause (MP) would demonstrate that both inflow and outflow into/ from magnetosphere can be modulated by the SPS and by the related outer magnetospheric resonances as well. We demonstrate in

  10. Resonant magnetic perturbations of edge-plasmas in toroidal confinement devices

    Science.gov (United States)

    Evans, T. E.

    2015-12-01

    Controlling the boundary layer in fusion-grade, high-performance, plasma discharges is essential for the successful development of toroidal magnetic confinement power generating systems. A promising approach for controlling the boundary plasma is based on the use of small, externally applied, edge resonant magnetic perturbation (RMP) fields (δ b\\bot\\text{ext}≈ {{10}-4}\\to {{10}-3}~\\text{T} ). A long-term focus area in tokamak fusion research has been to find methods, involving the use of non-axisymmetric magnetic perturbations to reduce the intense particle and heat fluxes to the wall. Experimental RMP research has progressed from the early pioneering work on tokamaks with material limiters in the 1970s, to present day research in separatrix-limited tokamaks operated in high-confinement mode, which is primarily aimed at the mitigation of the intermittent fluxes due edge localized modes (ELMs). At the same time, theoretical research has evolved from analytical models to numerical simulations, including the full 3D complexities of the problem. Following the first demonstration of ELM suppression in the DIII-D tokamak during 2003, there has been a rapid worldwide growth in theoretical, numerical and experimental edge RMP research resulting in the addition of ELM control coils to the ITER baseline design (Loarte et al 2014 Nucl. Fusion 54 033007). This review provides an overview of edge RMP research including a summary of the early theoretical and numerical background along with recent experimental results on improved particle and energy confinement in tokamaks triggered by edge RMP fields. The topics covered make up the basic elements needed for developing a better understanding of 3D magnetic perturbation physics, which is required in order to utilize the full potential of edge RMP fields in fusion relevant high performance, H-mode, plasmas.

  11. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    OpenAIRE

    Brett, Michael J.; Dijken, Jaron G. Van

    2012-01-01

    We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, whi...

  12. Resonances

    DEFF Research Database (Denmark)

    an impetus or drive to that account: change, innovation, rupture, or discontinuity. Resonances: Historical Essays on Continuity and Change explores the historiographical question of the modes of interrelation between these motifs in historical narratives. The essays in the collection attempt to realize...... theoretical consciousness through historical narrative ‘in practice’, by discussing selected historical topics from Western cultural history, within the disciplines of history, literature, visual arts, musicology, archaeology, philosophy, and theology. The title Resonances indicates the overall perspective...

  13. A study on vacuum aspects of electron cyclotron resonance ion source plasma

    Science.gov (United States)

    Ghosh, S.; Taki, G. S.; Mallick, C.; Bhandari, R. K.

    2008-05-01

    The electron cyclotron resonance (ECR) ion source is special type hot plasma machine where the high temperature electrons co-exist with multiply charge state ions and neutrals. A few years ago 6.4 GHz. ECR ion source (VEC-ECR) was developed indigenously at VECC. This multiply charged ion source is being used continuously to inject heavy ion beams into the cyclotron. Vacuum plays the major role in ECR ion source. The water cooled plasma chamber is made from an oxygen free high conductivity copper billet to meet the suitable surface condition for vacuum purpose. The entire volume of the ion source is pumped by two 900 1/s special type oil diffusion pumps to achieve 5×10-8 Torr. Usually main plasma chamber is pumped by the plasma itself. Moreover a few 1/s additional pumping speed is provided through extraction hole and pumping slot on the extraction electrode. A study has been carried out to understand the role of vacuum on the multiply charged heavy ion production process. Considering the ion production and loss criteria, it is seen that for getting Ar18+ better vacuum is essential for lower frequency operation. So, an ECR ion source can give better charge state current output operating at higher frequency and stronger confining magnetic field under a specific vacuum condition. The low pressure condition is essential to minimize charge exchange loss due to recombination of multiply charged ions with the neutral atoms. A fixed ratio of neutral to electron density must be maintained for optimizing a particular charge state in the steady state condition. As the electron density is proportional to square of the injected microwave frequency (nevpropf2) a particular operating pressure is essential for a specific charge state. From the study, it has been obtained that the production of Ar18+ ions needs a pressure ~ 9.6×10-8 Torr for 6.4 GHz. ECR ion source. It is also obtained that an ECR ion source, works at a particular vacuum level, can give better charge state

  14. Experimental observation of electron bounce resonance through electron energy distribution measurement in a finite size inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Seuli [Department of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763 (Korea, Republic of); Kang, Hyun-Ju; Kim, Yu-Sin; Chang, Yoon-Min; Chung, Chin-Wook, E-mail: joykang@hanyang.ac.kr [Department of Electrical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763 (Korea, Republic of); Kwon, Deuk-Chul [Plasma Technology Research Center, National Fusion Research Institute, 169-148 Gwahak-ro, Yuseong-gu, Daejeon 34133 (Korea, Republic of)

    2016-06-15

    The electron bounce resonance was experimentally investigated in a low pressure planar inductively coupled plasma. The electron energy probability functions (EEPFs) were measured at different chamber heights and the energy diffusion coefficients were calculated by the kinetic model. It is found that the EEPFs begin to flatten at the first electron bounce resonance condition, and the plateau shifts to a higher electron energy as the chamber height increases. The plateau which indicates strong electron heating corresponds not only to the electron bounce resonance condition but also to the peaks of the first component of the energy diffusion coefficients. As a result, the plateau formation in the EEPFs is mainly due to the electron bounce resonance in a finite inductive discharge.

  15. Electro