Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

Science.gov (United States)

Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

2012-01-01

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Application to printed resistors

International Nuclear Information System (INIS)

Hachiyanagi, Yoshimi; Uraki, Hisatsugu; Sawamura, Masashi

1989-01-01

Most of printed circuit boards are made at present by etching copper foils which are laminated on insulating composite boards of paper/phenol resin or glass nonwoven fabric/epoxy rein. This is called subtractive process, and since this is a wet process, the problem of coping with the pollution due to etching solution, plating solution and others is involved. As the method of solving this problem, attention has been paid to the dry process which forms conductor patterns by screen printing using electro-conductive paste. For such resin substrates, generally polymer thick films (PTF) using thermosetting resin as the binder are used. Also the research on the formation of resistors, condensers and other parts by printing using the technology of cermet thick films (CTF) and PTF is active, and it is partially put in practical use. The problems are the deformation and deterioration of substrates, therefore, as the countermeasures, electron beam hardening type PTF has been studied, and various pastes have been developed. In this paper, electron beam hardening type printed resistors are reported. The features, resistance paste, and a number of the experiments on printed resistors are described. (K.I.)

Noise characteristics of resistors buried in low-temperature co-fired ceramics

International Nuclear Information System (INIS)

Kolek, A; Ptak, P; Dziedzic, A

2003-01-01

The comparison of noise properties of conventional thick film resistors prepared on alumina substrates and resistors embedded in low-temperature co-fired ceramics (LTCCs) is presented. Both types of resistors were prepared from commercially available resistive inks. Noise measurements of LTCC resistors below 1 kHz show Gaussian 1/f noise. This is concluded from the calculations of the second spectra as well as from studying the volume dependence of noise intensity. It has occurred that noise index of LTCC resistors on average is not worse than that of conventional resistors. A detailed study of co-fired surface resistors and co-fired buried resistors show that burying a resistor within LTCC substrate usually leads to (significant) enhancement of resistance but not of noise intensity. We interpret this behaviour as another argument in favour of tunnelling as the dominant conduction mechanism in LTCC resistors

Resistor-less charge sensitive amplifier for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

2016-11-01

A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

N-Bit Binary Resistor

Science.gov (United States)

Tcheng, Ping

1989-01-01

Binary resistors in series tailored to precise value of resistance. Desired value of resistance obtained by cutting appropriate traces across resistors. Multibit, binary-based, adjustable resistor with high resolution used in many applications where precise resistance required.

Microstructure and electrical properties of slug-type resistors based on B4C and TiC - ESCA - XPS and impedance spectroscopy investigations

International Nuclear Information System (INIS)

Klimiec, E.; Zaraska, W.; Stobiecki, T.; Bak, W.; Starzyk, F.

2000-01-01

The microstructure and electrical properties of slug-type resistors based on B 4 C and TiC were investigated. From XPS measurements was deducted that Ti in TiO 2 is in intermediate oxidation number between Ti +4 and Ti +3 . The impedance of both type of resistors is independent on frequency in the range from 10 3 to 10 4 Hz, only very subtle differences above 10 4 Hz are observed. The metallic type conductivity in TiC and semiconducting in B 4 C was established. (author)

Karakteristik Tcr Dan Vcr Resistor Pasta Resistor Pada Substrat Alumina Dengan Teknologi Film Tebal

OpenAIRE

Raden Arief Setyawan, ST., MT., Rhezananta Arya H., Ir. M. Julius St., MS

2014-01-01

Resistor merupakan komponen yang sangat berperan dalam rangkaian film tebal. Resistor berteknologi film tebal mempunyai karakteristik yang terdiri dari TCR (Temperature Coefficient of Resistance) dan VCR (Voltage Coefficient of Resistance). Dari alasan di atas maka perlu untuk mengetahui bagaimana pembuatan resistor film tebal dan mengetahui karakteristiknya.Penelitian ini menggunakan proses screen printing dalam pembuatan resistor yang kemudian melalui proses pengendapan (15 menit), drying (...

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Directory of Open Access Journals (Sweden)

Xiao-Yu Tang

2015-01-01

Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

A novel pseudo resistor structure for biomedical front-end amplifiers.

Science.gov (United States)

Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

2015-08-01

This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

Electrochemical characterization of liquid resistors

International Nuclear Information System (INIS)

Wilson, J.M.; Whiteley, R.V.

1983-01-01

During the first two years of operation of Sandia's Particle Beam Fusion Accelerator (PBFA I) the reliability of the CuSO 4 solution resistors in the Marx Generator Energy Storage System has been unsatisfactory. Resistor failure, which is characterized by a large increase in resistance, has been attributed to materials, production techniques, and operating parameters. The problems associated with materials and production techniques have been identified and solutions are proposed. Non-ideal operating parameters are shown to cause polarization of the cathode in the resistor. This initiates electrochemical reactions in the resistor. These reactions often lead to resistance changes and to eventual resistor failure

The molecularly controlled semiconductor resistor: how does it work?

Science.gov (United States)

Capua, Eyal; Natan, Amir; Kronik, Leeor; Naaman, Ron

2009-11-01

We examine the current response of molecularly controlled semiconductor devices to the presence of weakly interacting analytes. We evaluate the response of two types of devices, a silicon oxide coated silicon device and a GaAs/AlGaAs device, both coated with aliphatic chains and exposed to the same set of analytes. By comparing the device electrical response with contact potential difference and surface photovoltage measurements, we show that there are two mechanisms that may affect the underlying substrate, namely, formation of layers with a net dipolar moment and molecular interaction with surface states. We find that whereas the Si device response is mostly correlated to the analyte dipole, the GaAs device response is mostly correlated to interactions with surface states. Existence of a silicon oxide layer, whether native on the Si or deliberately grown on the GaAs, eliminates analyte interaction with the surface states.

Time-adjusted variable resistor

Science.gov (United States)

Heyser, R. C.

1972-01-01

Timing mechanism was developed effecting extremely precisioned highly resistant fixed resistor. Switches shunt all or portion of resistor; effective resistance is varied over time interval by adjusting switch closure rate.

Vamistor resistor investigation

Science.gov (United States)

1973-01-01

Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

Producing p-type conductivity in self-compensating semiconductor material

International Nuclear Information System (INIS)

Vechten, J.A. van; Woodall, J.M.

1981-01-01

This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

Characteristics of burden resistors for high-precision DC current transducers

CERN Document Server

Fernqvist, G; Hudson, G; Pickering, J

2007-01-01

The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ﾜpower coefficient” (PC) and test results from some different types of resistors available on the market.

Discrete/PWM Ballast-Resistor Controller

Science.gov (United States)

King, Roger J.

1994-01-01

Circuit offers low switching loss and automatic compensation for failure of ballast resistor. Discrete/PWM ballast-resistor controller improved shunt voltage-regulator circuit designed to supply power from high-resistance source to low-impedance bus. Provides both coarse discrete voltage levels (by switching of ballast resistors) and continuous fine control of voltage via pulse-width modulation.

A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

Energy Technology Data Exchange (ETDEWEB)

Wang Yi; He Lenian; Ning Zhihua; Shao Yali, E-mail: wangyi@vlsi.zju.edu.c [Institute of VLSI Design, Zhejiang University, Hangzhou 310027 (China)

2009-09-15

This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

International Nuclear Information System (INIS)

Wang Yi; He Lenian; Ning Zhihua; Shao Yali

2009-01-01

This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

Improved cryo-resistors with low temperature coefficients

International Nuclear Information System (INIS)

Warnecke, P.; Braun, E.

1989-01-01

A new type of 10- and 12.9κΩ cryo-resistors operating in a liquid helium bath with small temperature coefficient of resistivity have been built. Details for the fabrication of these improved cryo-resistors are reported. Experimental evidence of their drift rates are on the order of a few parts in 10 9 per day. A reduction of the mean pressure of 98.7 kPa in the helium dewar to 86.1 kPa, corresponding to a temperature decrease from 4.19 to 4.07 Κ, did not change the resistance value by more than the experimental resolution of 4 parts in 10 8

30 CFR 77.801 - Grounding resistors.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 77.801 Section 77.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH...-Voltage Distribution § 77.801 Grounding resistors. The grounding resistor, where required, shall be of the...

High voltage load resistor array

Science.gov (United States)

Lehmann, Monty Ray [Smithfield, VA

2005-01-18

A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

Current limiting capability of diffused resistors

International Nuclear Information System (INIS)

Shedd, W.; Cappelli, J.

1979-01-01

An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6*10 12 rads(Si)/sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits

Dual design resistor for high voltage conditioning and transmission lines

Science.gov (United States)

Siggins, Timothy Lynn [Newport News, VA; Murray, Charles W [Hayes, VA; Walker, Richard L [Norfolk, VA

2007-01-23

A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

Improved switch-resistor packaging

Science.gov (United States)

Redmerski, R. E.

1980-01-01

Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

High linearity current communicating passive mixer employing a simple resistor bias

International Nuclear Information System (INIS)

Liu Rongjiang; Guo Guiliang; Yan Yuepeng

2013-01-01

A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB. (semiconductor integrated circuits)

n-Type organic semiconductors in organic electronics.

Science.gov (United States)

Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

2010-09-08

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

Calculable resistors of coaxial design

International Nuclear Information System (INIS)

Kucera, J; Vollmer, E; Schurr, J; Bohacek, J

2009-01-01

1000 Ω and 1290.64 Ω coaxial resistors with calculable frequency dependence have been realized at PTB to be used in quantum Hall effect-based impedance measurements. In contradistinction to common designs of coaxial resistors, the design described in this paper makes it possible to remove the resistive element from the shield and to handle it without cutting the outer cylindrical shield of the resistor. Emphasis has been given to manufacturing technology and suppressing unwanted sources of frequency dependence. The adjustment accuracy is better than 10 µΩ Ω −1

Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors

DEFF Research Database (Denmark)

Hansen, Ole; Reck, Kasper; Thomsen, Erik Vilain

2008-01-01

We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we...... than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics...

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

Energy Technology Data Exchange (ETDEWEB)

Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

Science.gov (United States)

Li, Shu; Zhang, Tong

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

International Nuclear Information System (INIS)

Li Shu; Zhang Tong

2008-01-01

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

2006-05-28

Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

Science.gov (United States)

Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

2010-06-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

International Nuclear Information System (INIS)

Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

2010-01-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Method to induce a conductivity type in a semiconductor

International Nuclear Information System (INIS)

Aboaf, J.A.; Sedgwick, T.O.

1977-01-01

The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

Studying the noise parameters of thin-film silicon resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1986-01-01

The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

International Nuclear Information System (INIS)

Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

2006-01-01

It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

Critical exponents for diluted resistor networks.

Science.gov (United States)

Stenull, O; Janssen, H K; Oerding, K

1999-05-01

An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

Effects of high voltage pulse trimming on structural properties of thick-film resistors

Directory of Open Access Journals (Sweden)

Stanimirović Zdravko

2017-01-01

Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

30 CFR 77.510 - Resistors; location and guarding.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Resistors; location and guarding. 77.510 Section 77.510 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Electrical Equipment-General § 77.510 Resistors; location and guarding. Resistors, heaters...

Slew Rate Induced Distortion in Switched-Resistor Integrators

NARCIS (Netherlands)

Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.

2006-01-01

Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate

Transport behaviour of commercially available 100-Omega standard resistors

CSIR Research Space (South Africa)

Schumacher, B

2001-04-01

Full Text Available Several types of commercial 100-Omega resistors can be used with the cryogenic current comparator to maintain the resistance unit, derived from the Quantized Hall Effect (QHE), and to disseminate this unit to laboratory resistance standards. Up...

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

International Nuclear Information System (INIS)

Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

1994-01-01

In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

Solid-state resistor for pulsed power machines

Science.gov (United States)

Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas; Fowler, William E.; MacRunnels, Keven Alan; Justus, David; Stygar, William A.

2016-12-06

A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei

2016-02-16

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Recent Developments in p-Type Oxide Semiconductor Materials and Devices

KAUST Repository

Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2016-01-01

The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

Study and field verification of the effects of removing closing resistors from 500 kV circuit breakers

International Nuclear Information System (INIS)

Selin, D.A.; Agrawal, B.L.; Farmer, R.G.; Demcko, J.A.

1992-01-01

Closing resistors in EHV circuit breakers are frequently used to reduce switching transients on lines thus preventing flashovers during line energization. Maintenance and failures of such closing resistors can be costly and reduce transmission system reliability. For these reasons, APS conducted an investigation into the technical feasibility of operating its 500 kV without closing resistors. This paper describes study results of removing closing resistors from 500 kV breakers in a system which employs older technology silicon carbide type surge arresters. The paper also describes results of field tests of the expected flashover rates calculated in the study. These field tests involve repeatedly energizing a 258 mile 500 kV line using a breaker in which the closing resistors are disabled. Transient overvoltages captured during the tests are compared with predicted overvoltages. The study concludes that closing resistors may be removed from the subject system without unacceptable consequences

For current viewing resistor loads

Science.gov (United States)

Lyons, Gregory R [Tijeras, NM; Hass, Jay B [Lee's Summit, MO

2011-04-19

The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.

Irreversible entropy model for damage diagnosis in resistors

Energy Technology Data Exchange (ETDEWEB)

Cuadras, Angel, E-mail: angel.cuadras@upc.edu; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos [Instrumentation, Sensor and Interfaces Group, Electronic Engineering Department, Escola d' Enginyeria de Telecomunicació i Aeronàutica de Castelldefels EETAC, Universitat Politècnica de Catalunya, Barcelona Tech (UPC), Castelldefels-Barcelona (Spain)

2015-10-28

We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.

Irreversible entropy model for damage diagnosis in resistors

International Nuclear Information System (INIS)

Cuadras, Angel; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos

2015-01-01

We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance

Electrical Switching of Perovskite Thin-Film Resistors

Science.gov (United States)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article

Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

International Nuclear Information System (INIS)

Kreitzer, B.R.; Houck, T.L.; Luchterhand, O.C.

2011-01-01

This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of ∼1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm 3 liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by ∼0.4 C which produces a 0.7% change in resistance. The typical cooling rate is ∼0.4 C per minute which results in ∼0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic is minimized while still

Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

Energy Technology Data Exchange (ETDEWEB)

Kreitzer, B R; Houck, T L; Luchterhand, O C

2011-07-19

This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of {approx}1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm{sup 3} liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by {approx}0.4 C which produces a 0.7% change in resistance. The typical cooling rate is {approx}0.4 C per minute which results in {approx}0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic

Thermal aspects of resistors embedded in dielectrics

International Nuclear Information System (INIS)

Caprari, R.S.

1995-10-01

This note presents a formula for estimating the temperature of a distributed resistor or resistor chain that is immersed in a dielectric medium, which in turn is surrounded by a heat reservoir. An example computation from an actual instrument in included. 6 refs

Optically coupled semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Kumagaya, Naoki

1988-11-18

This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

A resistor interpretation of general anisotropic cardiac tissue.

Science.gov (United States)

Shao, Hai; Sampson, Kevin J; Pormann, John B; Rose, Donald J; Henriquez, Craig S

2004-02-01

This paper describes a spatial discretization scheme for partial differential equation systems that contain anisotropic diffusion. The discretization method uses unstructured finite volumes, or the boxes, that are formed as a secondary geometric structure from an underlying triangular mesh. We show how the discretization can be interpreted as a resistive circuit network, where each resistor is assigned at each edge of the triangular element. The resistor is computed as an anisotropy dependent geometric quantity of the local mesh structure. Finally, we show that under certain conditions, the discretization gives rise to negative resistors that can produce non-physical hyperpolarizations near depolarizing stimuli. We discuss how the proper choice of triangulation (anisotropic Delaunay triangulation) can ensure monotonicity (i.e. all resistors are positive).

Evaluation of Pressure Generated by Resistors From Different Positive Expiratory Pressure Devices.

Science.gov (United States)

Fagevik Olsén, Monika; Carlsson, Maria; Olsén, Erik; Westerdahl, Elisabeth

2015-10-01

Breathing exercises with positive expiratory pressure (PEP) are used to improve pulmonary function and airway clearance. Different PEP devices are available, but there have been no studies that describe the pressure generated by different resistors. The purpose of this study was to compare pressures generated from the proprietary resistor components of 4 commercial flow-dependent PEP valves with all other parameters kept constant. Resistors from 4 flow-regulated PEP devices (Pep/Rmt system, Wellspect HealthCare; Pipe P breathing exerciser, Koo Medical Equipment; Mini-PEP, Philips Respironics [including resistors by Rüsch]; and 15-mm endo-adapter, VBM Medizintechnik) were tested randomly by a blinded tester at constant flows of 10 and 18 L/min from an external gas system. All resistors were tested 3 times. Resistors with a similar diameter produced statistically significant different pressures at the same flow. The differences were smaller when the flow was 10 L/min compared with 18 L/min. The differences were also smaller when the diameter of the resistor was increased. The pressures produced by the 4 resistors of the same size were all significantly different when measuring 1.5- and 2.0-mm resistors at a flow of 10 L/min and 2.0-mm resistors at a flow of 18 L/min (P < .001). There were no significant differences between any of the resistors when testing sizes of 4.5 and 5.0 mm at either flow. The Mini-PEP and adapter resistors gave the highest pressures. Pressures generated by the different proprietary resistor components of 4 commercial PEP devices were not comparable, even though the diameter of the resistors is reported to be the same. The pressures generated were significantly different, particularly when using small-diameter resistors at a high flow. Therefore, the resistors may not be interchangeable. This is important information for clinicians, particularly when considering PEP for patients who do not tolerate higher pressures. Copyright © 2015 by

Stochastic Resonance Induced by Dichotomous Resistor in an Electric Circuit

International Nuclear Information System (INIS)

Li Jinghui; Han Yinxia

2007-01-01

An electric circuit with dichotomous resistor is investigated. It is shown that the amplitude of the average electric current washing the resistor represents the phenomenon of stochastic resonance, which is the response as a function of the correlation time of the dichotomous resistor.

Process for forming synapses in neural networks and resistor therefor

Science.gov (United States)

Fu, Chi Y.

1996-01-01

Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

Reliability growth of thin film resistors contact

Directory of Open Access Journals (Sweden)

Lugin A. N.

2010-10-01

Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

30 CFR 57.12023 - Guarding electrical connections and resistor grids.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... NONMETAL MINES Electricity Surface and Underground § 57.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be...

30 CFR 56.12023 - Guarding electrical connections and resistor grids.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... MINES Electricity § 56.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be guarded, unless protection...

Adjustable thermal resistor by reversibly folding a graphene sheet.

Science.gov (United States)

Song, Qichen; An, Meng; Chen, Xiandong; Peng, Zhan; Zang, Jianfeng; Yang, Nuo

2016-08-11

Phononic (thermal) devices such as thermal diodes, thermal transistors, thermal logic gates, and thermal memories have been studied intensively. However, tunable thermal resistors have not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor based on folded graphene. Through theoretical analysis and molecular dynamics simulations, we study the phonon-folding scattering effect and the dependence of thermal resistivity on the length between two folds and the overall length. Furthermore, we discuss the possibility of realizing instantaneously adjustable thermal resistors in experiment. Our studies bring new insights into designing thermal resistors and understanding the thermal modulation of 2D materials by adjusting basic structure parameters.

30 CFR 77.801-1 - Grounding resistors; continuous current rating.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors; continuous current rating... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.801-1 Grounding resistors; continuous current rating. The ground fault current rating of grounding resistors shall meet the “extended...

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... resistor; continuous current rating. The ground fault current rating of grounding resistors shall meet the...

Resistor cooling in a vacuum

International Nuclear Information System (INIS)

Crittenden, R.; Krider, J.

1987-01-01

This note describes thermal measurements which were done on a resistor operating both in air at one atmosphere pressure and in a vacuum of a few milliTorr. The motivation for this measurement was our interest in operating a BGO crystal-photomultiplier tube-base assembly in a vacuum, as a synchrotron radiation detector to tag electrons in the MT beam. We wished to determine what fraction of the total resistor power was dissipated by convection in air, in order to know whether there would be excessive heating of the detector assembly in a vacuum. 3 figs

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Methods for enhancing P-type doping in III-V semiconductor films

Science.gov (United States)

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

2017-08-01

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Development of n-type polymer semiconductors for organic field-effect transistors

International Nuclear Information System (INIS)

Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

2015-01-01

We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

International Nuclear Information System (INIS)

LaGraff, J.R.; Chan, H.; Murduck, J.M.; Hong, S.H.; Ma, Q.Y.

1997-01-01

A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa 2 Cu 3 O 7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20 - 140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy. copyright 1997 American Institute of Physics

Babylonian Resistor Networks

Science.gov (United States)

Mungan, Carl E.; Lipscombe, Trevor C.

2012-01-01

The ancient Babylonians had an iterative technique for numerically approximating the values of square roots. Their method can be physically implemented using series and parallel resistor networks. A recursive formula for the equivalent resistance R[subscript eq] is developed and converted into a nonrecursive solution for circuits using…

NuMI proton kicker extraction magnet termination resistor system

Energy Technology Data Exchange (ETDEWEB)

Reeves, S.R.; Jensen, C.C.; /Fermilab

2005-05-01

The temperature stability of the kicker magnet termination resistor assembly directly affects the field flatness and amplitude stability. Comprehensive thermal enhancements were made to the existing Main Injector resistor assembly design to satisfy NuMI performance specifications. Additionally, a fluid-processing system utilizing Fluorinert{reg_sign} FC-77 high-voltage dielectric was built to precisely control the setpoint temperature of the resistor assembly from 70 to 120F, required to maintain constant resistance during changing operational modes. The Fluorinert{reg_sign} must be continually processed to remove hazardous breakdown products caused by radiation exposure to prevent chemical attack of system components. Design details of the termination resistor assembly and Fluorinert{reg_sign} processing system are described. Early performance results will be presented.

Temperature-controlled resistor

Science.gov (United States)

Perkins, T. G.

1969-01-01

Electrical resistance of a carbon-pile resistor is controlled by the compression or relaxation of a pile of carbon disks by a thermally actuated bimetallic spring. The concept is advantageous in that it is direct-acting, can cover a wide range of controllable characteristics, and can handle considerable power directly.

Voltage-Controlled Floating Resistor Using DDCC

Directory of Open Access Journals (Sweden)

M. Kumngern

2011-04-01

Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

International Nuclear Information System (INIS)

Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

2014-01-01

Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al 2 O 3 , which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60 Co and 137 Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between circuit board and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient. - Highlights: • Impact of a mobile phone mode (switched on/off) on absorbed dose by resistors was showed. • The influence of the temperature during irradiation on absorbed dose was measured. • Dose distribution inside of a mobile phone was performed. • Fading factor of resistors was calculated

Thermal Characterization of the Overload Carbon Resistors

Directory of Open Access Journals (Sweden)

Ivana Kostić

2013-01-01

Full Text Available In many applications, the electronic component is not continuously but only intermittently overloaded (e.g., inrush current, short circuit, or discharging interference. With this paper, we provide insight into carbon resistors that have to hold out a rarely occurring transient overload. Using simple electrical circuit, the resistor is overheating with higher current than declared, and dissipation is observed by a thermal camera.

TI--CR--AL--O thin film resistors

Science.gov (United States)

Jankowski, Alan F.; Schmid, Anthony P.

2000-01-01

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Pinched hysteresis behavior in a PID-controlled resistor

Directory of Open Access Journals (Sweden)

M.A. Carrasco-Aguilar

2018-06-01

Full Text Available A current-controlled grounded resistor that exhibits a frequency-dependent pinched hysteresis loop is described. A mathematical model describing this behavior is derived and validated numerically, which has the form of a Proportional Integral-Derivative (PID controller. The proposed topology is build by using AD844 commercially available active device configured as second-generation current conveyor and experimental tests are compared with numerical simulations, showing a good agreement among them. Moreover, the proposed PID-controlled resistor can be reconfigured in order to be used in future applications such as programmable analog circuits. Keyword: Pinched hysteresis, Current conveyors, Nonlinear resistor, Proportional-Integral-Derivative Controller

Restrictions on modeling spin injection by resistor networks

OpenAIRE

Rashba, Emmanuel

2008-01-01

Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.

Random resistor network model of minimal conductivity in graphene.

Science.gov (United States)

Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

2007-10-26

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

Conceptual design of dump resistor for superconducting CS of SST-1

International Nuclear Information System (INIS)

Roy, Swati; Pradhan, Subrata; Panchal, Arun

2015-01-01

During the upgradation of SST-1, the resistive central solenoid (CS) coil has been planned to be replaced with Nb 3 Sn based superconducting coil. The superconducting CS will store upto 3.5MJ of magnetic energy per operation cycle with operating current upto 14kA. In case of coil quench, the energy stored in the coils is to be extracted rapidly with a time constant of 1.5s. This will be achieved by inserting a 20m Ohm dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a vital part of the superconducting CS quench protection system, a conceptual design of the 20m Ohm dump resistor has been proposed. In this paper, the required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented. Natural air circulation is proposed as cooling method for this dump resistor. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the shape of meander to minimize the stray inductance and increase the surface area for cooling. The entire dump resistor will be an array of such grids connected in series and parallel to meet electrical as well as thermal parameters. The maximum temperature of the proposed dump resistor is upto 350 °C during dump 3.5MJ energy. The proposed design permits indigenous fabrication of the dump resistor using commercially available welding techniques. (author)

Improvement of Transient Stability of Power System by System Damping Series Resistor (SDSR)

OpenAIRE

上里, 勝実; 千住, 智信; 当銘, 秀之; 高原, 景滋; Uezato, Katsumi; Senjyu, Tomonobu; Toume, Hideyuki; Takahara, Keiji

1990-01-01

The system damping resistor is one of the method for improving the transient stability of power systems. The main circuit is the simple construction so that is low cost and is few abnormal surge, and is superior in ability of economy, reliability and maintenance. Conventionally, most of all system damping resistors have adopted the paralleled resistor, whereas the series resistor is used little.In this paper, we investigate the characteristics of the series resistor by comparing with the para...

Frequency dependence of the active impedance component of silicon thin-film resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1987-01-01

A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

Alternative power supply and dump resistor connections for similar, mutually coupled, superconducting coils

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, W.; Wang, S.T.

1983-01-01

Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains ''coupling'' resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

Alternative power supply and dump resistor connections for similar, mutally coupled, superconducting coils

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, D.W.; Wang, S.T.

1983-01-01

Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Uno, Masaaki

1990-01-08

As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

Development of a miniaturized watch-type dosimeter using a silicon printed-circuit board

International Nuclear Information System (INIS)

Ishikura, Takeshi; Sakamaki, Tsuyoshi; Matsumoto, Iwao; Aoyama, Kei; Nakamura, Takashi

2008-01-01

The electrical personal dosimeter using a silicon semiconductor sensor has the advantage of real time response and alarm function, which can prevent unexpected over-exposure. We tried to develop a miniaturized watch-type dosimeter by incorporating the silicon semiconductor sensor on a silicon printed-circuit board. Thin film resistors, capacitors and wiring patterns are formed on a downsized printed-circuit board. Electronic parts including transistors are mounted by soldering on the silicon printed-circuit board. The dosimeter is further miniaturized by downsizing the amplifier circuit, the semiconductor radiation sensor, the power supply circuit, setting parts and alarm part. The performance of the developed dosimeter was evaluated with respect to the gamma-ray spectra, angular dependence and linearity to dose equivalent rate, and it was confirmed that this dosimeter has the performance equivalent to a commercially available electrical personal dosimeter. (author)

Studi Pengaruh Pengaman Galvanometer terhadap Keakuratan Hasil Pengukuran Resistor pada Jembatan Wheatstone Sederhana

OpenAIRE

Herlan, Dedeng

2014-01-01

Pengaman galvanometer pada penggunaan jembatan wheastone sebagai alat untuk mengukur besarkomponen resistor R dikembangkan pada penelitian ini. Pengaman galvanometer yang ditelitimemakai bahan resistor yang telah tersedia di pasaran dengan berbagai ukuran. . Berdasarkanbentuk strukturnya yang khas dari sebuah jembatan wheatstone, resistor yang digunakan sebagaipengaman galvanometer dalam penelitian ini, yaitu susunan resistor variabel R3 dan R4dengantipe L yang mengapit salah s...

Air-cooled fast discharge resistors for ITER magnets

International Nuclear Information System (INIS)

Tanchuk, Victor; Grigoriev, Sergey; Lokiev, Vladimir; Roshal, Alexander; Song, Inho; Buzykin, Oleg

2011-01-01

The ITER superconducting magnets will store up to 50 GJ of magnetic energy per operation cycle. In case of coil quench the energy stored in the coils must be extracted rapidly with a time constant from 7.5 to 14 s. It will be achieved by fast discharge resistors (FDR) normally bridged by circuit breakers and inserted in series with the superconducting coils. The fast discharge of the coils results practically in adiabatic heating of the resistive elements up to 200-300 deg. C. The resistors need to be cooled to the initial temperature over 6-8 h. Natural air circulation is proposed as a cooling method. In order to simulate the temperature response of the resistors to energy released in the resistive plates and to demonstrate their cooling capability within the required time by natural air circulation the numerical model of the resistor cooling circuit has been developed. As the calculations have shown, the developed FDR cooling system based on cooling by natural air circulation is capable of providing the required temperature operation regime of FDRs, but the supply channels are to be optimized so that the cooling time does not exceed the permissible one.

A low-cost DAC BIST structure using a resistor loop.

Directory of Open Access Journals (Sweden)

Jaewon Jang

Full Text Available This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter. Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

A low-cost DAC BIST structure using a resistor loop.

Science.gov (United States)

Jang, Jaewon; Kim, Heetae; Kang, Sungho

2017-01-01

This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test) structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter). Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

Science.gov (United States)

Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

2011-01-11

The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

Resistors Improve Ramp Linearity

Science.gov (United States)

Kleinberg, L. L.

1982-01-01

Simple modification to bootstrap ramp generator gives more linear output over longer sweep times. New circuit adds just two resistors, one of which is adjustable. Modification cancels nonlinearities due to variations in load on charging capacitor and due to changes in charging current as the voltage across capacitor increases.

Theory of electroconductivity for anisotropic semiconductors of p-Te type

International Nuclear Information System (INIS)

Gorlej, P.N.; Tomchuk, P.M.; Shenderovskij, V.A.

1975-01-01

The temperature dependence of the electric conductivity tensor has been studied in anisotropic semiconductors of Te-type with the p-type conductivity. The inelastic scattering of carriers on the optical lattice vibrations and on impurity ions is taken into account. From a general equation for the mobility tensor obtained through the variation method rather simple temperature dependences of the mobility are found for various ultimate cases. In particular, a generalization is given of the Convell-Weizscopf equation for the case of anisotropic impurity scattering. In case of a mixed impurity and lattice mechanism of scattering the temperature dependence of the mobility is plotted as a diagram for the semiconductors of p-Te parameters

Variable thermal resistor based on self-powered Peltier effect

OpenAIRE

Min, Gao; Yatim, N. M.

2008-01-01

Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported.

Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

International Nuclear Information System (INIS)

Pike, G.E.; Seager, C.H.

1977-01-01

This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

Variable thermal resistor based on self-powered Peltier effect

International Nuclear Information System (INIS)

Min Gao; Yatim, N Md

2008-01-01

Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported. (fast track communication)

Contact materials for thermostable resistors on the base of Ni-Re alloy

International Nuclear Information System (INIS)

Yusipov, H.Yu.; Glasman, L.I.; Arskaya, E.P.; Lazarev, Eh.M.; Korotkov, N.A.

1979-01-01

Given are the electron diffraction analysis results and the operational characteristics of the contact materials, used in the heat-resistant thin-filmed resistors (TFR), made on the basis of the Ni-Re system alloy. The results are compared with the pure nickel. Operational tests of the thin-filmed resistors, having (NR10-VP) alloy contacts, showed that the departure of the resistors nominals is almost twice as small as that for the resistors, having pure nickel contacts. The use of this alloy permits to increase the thermal stability and durability of the TFRs, if they are used under extreme conditions

Effects of surfaces on resistor percolation.

Science.gov (United States)

Stenull, O; Janssen, H K; Oerding, K

2001-05-01

We study the effects of surfaces on resistor percolation at the instance of a semi-infinite geometry. Particularly we are interested in the average resistance between two connected ports located on the surface. Based on general grounds as symmetries and relevance we introduce a field theoretic Hamiltonian for semi-infinite random resistor networks. We show that the surface contributes to the average resistance only in terms of corrections to scaling. These corrections are governed by surface resistance exponents. We carry out renormalization-group improved perturbation calculations for the special and the ordinary transition. We calculate the surface resistance exponents phiS and phiS(infinity) for the special and the ordinary transition, respectively, to one-loop order.

P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

KAUST Repository

Wang, Zhenwei

2018-03-11

Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

Pressure-Sensitive Resistor Material

Science.gov (United States)

Du Fresne, E. R.

1986-01-01

Low-conductivity particles in rubber offer wide dynamic range. Sensor consists of particles of relatively low conductivity embedded in rubber. Resistance of sensor decreases by about 100 times as pressure on it increases from zero to 0.8 MN/M to the second power. Resistor promising candidate as tactile sensor for robots and remote manipulators.

An HIV feedback resistor: auto-regulatory circuit deactivator and noise buffer.

Science.gov (United States)

Weinberger, Leor S; Shenk, Thomas

2007-01-01

Animal viruses (e.g., lentiviruses and herpesviruses) use transcriptional positive feedback (i.e., transactivation) to regulate their gene expression. But positive-feedback circuits are inherently unstable when turned off, which presents a particular dilemma for latent viruses that lack transcriptional repressor motifs. Here we show that a dissipative feedback resistor, composed of enzymatic interconversion of the transactivator, converts transactivation circuits into excitable systems that generate transient pulses of expression, which decay to zero. We use HIV-1 as a model system and analyze single-cell expression kinetics to explore whether the HIV-1 transactivator of transcription (Tat) uses a resistor to shut off transactivation. The Tat feedback circuit was found to lack bi-stability and Tat self-cooperativity but exhibited a pulse of activity upon transactivation, all in agreement with the feedback resistor model. Guided by a mathematical model, biochemical and genetic perturbation of the suspected Tat feedback resistor altered the circuit's stability and reduced susceptibility to molecular noise, in agreement with model predictions. We propose that the feedback resistor is a necessary, but possibly not sufficient, condition for turning off noisy transactivation circuits lacking a repressor motif (e.g., HIV-1 Tat). Feedback resistors may be a paradigm for examining other auto-regulatory circuits and may inform upon how viral latency is established, maintained, and broken.

A dc carpet cloak based on resistor networks.

Science.gov (United States)

Mei, Zhong Lei; Liu, Yu Sha; Yang, Fan; Cui, Tie Jun

2012-11-05

We propose, design, and implement a two-dimensional dc carpet cloak for steady electric field using the transformation optics (TO) method. Based on the circuit theory, we introduce a resistor network to mimic the resulting anisotropic conducting medium. The experimental prototype is fabricated using metal film resistors, and the measured results agree perfectly well with theoretical predictions. This study gives the first experimental verification of a dc carpet cloak, which expands the application of TO theory, and has potential applications in related areas.

New internal multi-range resistors for ac voltage calibration by using TVC

International Nuclear Information System (INIS)

Ali, Rasha S M

2015-01-01

Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac–dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac–dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter. (paper)

Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

Science.gov (United States)

Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

2017-01-01

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

Energy Technology Data Exchange (ETDEWEB)

Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

2007-10-15

A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Scaling law of resistance fluctuations in stationary random resistor networks

Science.gov (United States)

Pennetta; Trefan; Reggiani

2000-12-11

In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

Science.gov (United States)

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

Surface scattering mechanisms of tantalum nitride thin film resistor.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2014-01-01

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

Remote Experiments in Resistor Measurement

Directory of Open Access Journals (Sweden)

Popescu Viorel

2009-10-01

Full Text Available The paper describes blended learningapproach to teaching resistor measurement. It is basedon “Learning by Doing” paradigm: interacticesimulation, laboratory plants, real experimentsaccessed by Web Publishing Tools under LabVIEW.Studying and experimenting access is opened for 24hours a day, 7 days a week under Moodle bookingsystem.

Light absorption in disordered semiconductors with a random coulomb-type field

International Nuclear Information System (INIS)

Arbuzov, Yu.D.; Evdokimov, V.M.; Kolenkin, M.Yu.

1988-01-01

A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (E g - ℎω) -1/3 , where E g is the band gap of the semiconductor, and ℎω is the photon energy. The first three terms of the series are calculated in explicit form

Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

Energy Technology Data Exchange (ETDEWEB)

Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

2010-07-15

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Rational and irrational numbers from unit resistors

International Nuclear Information System (INIS)

Kasperski, Maciej; Kłobus, Waldemar

2014-01-01

We address the problem of constructing a network of unit resistors such that it enables the retrieval of an arbitrary value of equivalent resistance. In particular, we employ the notion of continued fractions to construct a ladder network by which we can easily obtain any fractional value resistance. In addition, since any irrational number is associated with an infinite continued fraction, we discuss the convergence of the equivalent resistance of an infinite resistive ladder and various aspects concerning the approximations of arbitrary numbers attained by adding additional resistors successively to the network. The presented methods can be easily implemented in an educational laboratory and offer an interesting addition to the topic of Ohm’s law. (paper)

Switching phase states in two van der Pol oscillators coupled by ttochastically time-varying resistor

OpenAIRE

Uwate, Y; Nishio, Y; Stoop, R

2009-01-01

We explore the synchronization and switching behavior of a system of two identical van der Pol oscillators coupled by a stochastically timevarying resistor. Triggered by the time-varying resistor, the system of oscillators switches between synchronized and anti-synchronized behavior. We find that the preference of the synchronized/antisynchronized state is determined by the ratio of the probabilities of the two resistor states. The length of the phases of maintained resistor states, however, ...

Free-standing silicon micro machined resistors from (110) substrate

International Nuclear Information System (INIS)

Bernardini, R.; Diligenti, A.; Nannini, A.; Piotto, M.

1998-01-01

A simple process to obtain silicon planes released from the substrate and provided with large area pads for ohmic contacts is described. Resistors 500 μm long with a 40 μm x 1 μm cross section were obtained. Resistance measurements showed that the current flows in a reduced cross section, probably owing to the presence of a superficial depletion layer. Preliminary magnetoresistance measurements are presented. Reduction of the resistor cross section can be obtained by thermal oxidation

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Conceptual design of Dump resistor for Superconducting CS of SST-1

Science.gov (United States)

Roy, Swati; Raj, Piyush; Panchal, Arun; Pradhan, Subrata

2017-04-01

Under upgradation activities for SST-1, the existing resistive central solenoid (CS) coil will be replaced with Nb3Sn based superconducting coil. Design of Central solenoid had been completed and some of the initiative has already taken for its manufacturing. The superconducting CS will store upto 3 MJ of magnetic energy per operation cycle with operating current upto 14 kA. During quench, energy stored in the coils has to be extracted rapidly with a time constant of 1.5 s by inserting a 20 mΩ dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a critical part of the superconducting CS quench protection system, a conceptual design of the 20 mΩ dump resistor has been proposed. The required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented and discussed. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the form of meander to minimize the stray inductance and increase the surface area for cooling. Such an array of grids connected in series and parallel will cater to the electrical as well as thermal parameters. It will be cooled by natural convection. During operation, the estimated maximum temperature of the proposed dump resistor will raise upto 600 K.

Break-collapse method for resistor networks-renormalization group applications

International Nuclear Information System (INIS)

Tsallis, C.; Coniglio, A.; Redner, S.

1982-01-01

The break-collapse method recently introduced for the q-state Potts model is adapted for resistor networks. This method greatly simplifies the calculation of the conductance of an arbitrary two-terminal d-dimensional array of conductances, obviating the use of either Kirchhoff's laws or the star-triangle or similiar transformations. Related properties are discussed as well. An illustrative real-space renormalization-group treatment of the random resistor problem on the square lattice is presented; satisfactory results are obtained. (Author) [pt

Recursion-transform method for computing resistance of the complex resistor network with three arbitrary boundaries.

Science.gov (United States)

Tan, Zhi-Zhong

2015-05-01

We develop a general recursion-transform (R-T) method for a two-dimensional resistor network with a zero resistor boundary. As applications of the R-T method, we consider a significant example to illuminate the usefulness for calculating resistance of a rectangular m×n resistor network with a null resistor and three arbitrary boundaries, a problem never solved before, since Green's function techniques and Laplacian matrix approaches are invalid in this case. Looking for the exact calculation of the resistance of a binary resistor network is important but difficult in the case of an arbitrary boundary since the boundary is like a wall or trap which affects the behavior of finite network. In this paper we obtain several general formulas of resistance between any two nodes in a nonregular m×n resistor network in both finite and infinite cases. In particular, 12 special cases are given by reducing one of the general formulas to understand its applications and meanings, and an integral identity is found when we compare the equivalent resistance of two different structures of the same problem in a resistor network.

The Sponge Resistor Model--A Hydrodynamic Analog to Illustrate Ohm's Law, the Resistor Equation R=?l/A, and Resistors in Series and Parallel

Science.gov (United States)

Pfister, Hans

2014-01-01

Physics students encountering electric circuits for the first time often ask why adding more resistors to a circuit sometimes increases and sometimes decreases the resulting total resistance. It appears that these students have an inadequate understanding of current flow and resistance. Students who do not adopt a model of current, voltage, and…

Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Ming-Hsien Li

2016-04-01

Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

2014-09-29

A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

Science.gov (United States)

Birkett, Martin; Penlington, Roger

2012-08-01

This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

X-Ray Characterization of Resistor/Dielectric Material for Low Temperature Co-Fired Ceramic Packages

International Nuclear Information System (INIS)

DIMOS, DUANE B.; KOTULA, PAUL G.; RODRIGUEZ, MARK A.; YANG, PIN

1999-01-01

High temperature XRD has been employed to monitor the devitrification of Dupont 951 low temperature co-fired ceramic (LTCC) and Dupont E84005 resistor ink. The LTCC underwent devitrification to an anorthite phase in the range of 835-875 C with activation energy of 180 kJ/mol as calculated from kinetic data. The resistor paste underwent devitrification in the 835-875 C range forming monoclinic and hexagonal celcian phases plus a phase believed to be a zinc-silicate. RuO(sub 2) appeared to be stable within this devitrified resistor matrix. X-ray radiography of a co-fired circuit indicated good structural/chemical compatibility between the resistor and LTCC

Automated crack detection in conductive smart-concrete structures using a resistor mesh model

Science.gov (United States)

Downey, Austin; D'Alessandro, Antonella; Ubertini, Filippo; Laflamme, Simon

2018-03-01

Various nondestructive evaluation techniques are currently used to automatically detect and monitor cracks in concrete infrastructure. However, these methods often lack the scalability and cost-effectiveness over large geometries. A solution is the use of self-sensing carbon-doped cementitious materials. These self-sensing materials are capable of providing a measurable change in electrical output that can be related to their damage state. Previous work by the authors showed that a resistor mesh model could be used to track damage in structural components fabricated from electrically conductive concrete, where damage was located through the identification of high resistance value resistors in a resistor mesh model. In this work, an automated damage detection strategy that works through placing high value resistors into the previously developed resistor mesh model using a sequential Monte Carlo method is introduced. Here, high value resistors are used to mimic the internal condition of damaged cementitious specimens. The proposed automated damage detection method is experimentally validated using a 500 × 500 × 50 mm3 reinforced cement paste plate doped with multi-walled carbon nanotubes exposed to 100 identical impact tests. Results demonstrate that the proposed Monte Carlo method is capable of detecting and localizing the most prominent damage in a structure, demonstrating that automated damage detection in smart-concrete structures is a promising strategy for real-time structural health monitoring of civil infrastructure.

Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

Science.gov (United States)

Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

2014-01-01

The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

2005-01-01

There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area of innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive high energy resistor. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-inductance, high temperature, high power density and high energy density resistors. The bulk resistor approach offers high reliability through better mechanical properties and simplicity of construction

Ruthenium oxide resistors as sensitive elements of composite bolometers

International Nuclear Information System (INIS)

Benassai, M.; Gallinaro, G.; Gatti, F.; Siri, S.; Vitale, S.

1988-01-01

Bolometers for particle detection made with Ruthenium oxide thermistors could be produced by means of a simple technique on a variety of different materials as substrata. Preliminary results on alpha particle detection with devices realized using commercial RuO 2 thick film resistor (Tfr) are considered positive for devices operating between. 3 and .1 k and determined us to pursue further the idea. Ruthenium oxide resistors on sapphire at the moment are being prepared. The behaviour of these devices st temperatures lower than .1 k has to be investigated in more detail

Semiconductor type n for applications in gas sensing film

International Nuclear Information System (INIS)

Cerón Hurtado, Nathalie Marcela; Rodríguez Páez, Jorge Enrique

2008-01-01

Semiconductors are materials commonly used in the conformation of the active material in gas sensors, in this paper the synthesis routes are shown for obtaining raw material Sn02-Ti02 system, n-type semiconductor material, methods of characterization the same and the formation of thick films. The synthesis was performed using the methods of precipitation Controlled Polymeric Precursor, characterization of ceramic powders are made using techniques of differential thermal analysis and thermogravimetric (DTA / TG), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM ) and Scanning Electron Microscopy (SEM); Finally they settled in thick films by screen printing method and microstructurally characterized by Optical Microscopy (M0) and Scanning Electron Microscopy (SEM), besides this electrically characterized. The ceramic powders obtained are nanoscale high chemical purity and respond favorably formed films in the presence of oxygen and carbon monoxide.

30 CFR 75.801 - Grounding resistors.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 75.801 Section 75.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.801 Grounding...

The resistance changes of carbon and metal oxide film resistors by irradiation of 60Co γ rays

International Nuclear Information System (INIS)

Okamoto, Shinichi; Fujino, Takahiro; Furuta, Junichiro; Yoshida, Toshio

1979-01-01

The resistance changes of glass-sealed deposited-carbon-film and carbon-coated-film resitors and metal oxide glazed resistors made in USA were studied by gamma-ray irradiation. (1) The resistances of deposited-carbon-film resistors of 50, 100 and 200 megohm did not change by irradiation of gamma rays up to 1.9 x 10 9 R. (2) The carbon-coated-film resistors of 100, 1000, 10000 and 100000 megohm had negative resistance changes by irradiation of gamma rays up to 9.9 x 10 8 R. (3) The resistances of metal oxide glazed resistors of 100, 1000 and 10000 megohm did not change by irradiation of gamma rays up to 8.8 x 10 8 R. When radiation monitoring instruments with hi-meg resistors are used in a gamma field with high intensity, the resistors must not be exposed to gamma rays with high doses, or the resistors which do not change by gamma-ray irradiation must be selected. (author)

Comparison of boron and neon damage effects in boron ion-implanted resistors

International Nuclear Information System (INIS)

MacIver, B.A.

1975-01-01

Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

Science.gov (United States)

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

Directory of Open Access Journals (Sweden)

Matteo Bonomo

2016-05-01

Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

H+-type and OH- -type biological protonic semiconductors and complementary devices.

Science.gov (United States)

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Roudsari, Anita Fadavi; Rousdari, Anita Fadavi; Helms, Brett A; Zhong, Chao; Anantram, M P; Rolandi, Marco

2013-10-03

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H(+) hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH(-) as proton holes. Discriminating between H(+) and OH(-) transport has been elusive. Here, H(+) and OH(-) transport is achieved in polysaccharide- based proton wires and devices. A H(+)- OH(-) junction with rectifying behaviour and H(+)-type and OH(-)-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H(+) and OH(-) to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

Efficient n-type doping of zinc-blende III-V semiconductor nanowires

Science.gov (United States)

Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

2014-03-01

We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

Science.gov (United States)

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Method of preparing high-temperature-stable thin-film resistors

Science.gov (United States)

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Electrochemical Migration on Electronic Chip Resistors in Chloride Environments

DEFF Research Database (Denmark)

Minzari, Daniel; Jellesen, Morten Stendahl; Møller, Per

2009-01-01

Electrochemical migration behavior of end terminals on ceramic chip resistors (CCRs) was studied using a novel experimental setup in varying sodium chloride concentrations from 0 to 1000 ppm. The chip resistor used for the investigation was 10-kΩ CCR size 0805 with end terminals made of 97Sn3Pb...... rate of the Sn and stability of Sn ions in the solution layer play a significant role in the formation of dendrites, which is controlled by chloride concentration and potential bias. Morphology, composition, and resistance of the dendrites were dependent on chloride concentration and potential....

Method of preparing high-temperature-stable thin-film resistors

International Nuclear Information System (INIS)

Raymond, L.S.

1983-01-01

A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

International Nuclear Information System (INIS)

Sexton, F.W.; Corbett, W.T.; Treece, R.K.; Hass, K.J.; Axness, C.L.; Hash, G.L.; Shaneyfelt, M.R.; Wunsch, T.F.; Hughes, K.L.

1991-01-01

In this paper the SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm 2 /mg and 180 MeV-cm 2 /mg with feedback resistors of 50 kΩ and 160 kΩ, respectively. The performance goal of 10 MHz over the full temperature range of -55 degrees C to +125 degrees C is exceeded for feedback resistors of 160 kΩ and less. Error rate calculations for this design predict that the error rate is less than once every 100 years when 50 kΩ feedback resistors are used in the D-latch design. Analysis of the SEU response using a lumped-parameter circuit simulator imply a charge collection depth of 4.5 μm. This is much deeper than the authors would expect for prompt collection in the epi and funnel regions and has been explained in terms of diffusion current in the heavily doped substrate

Design of a Compact Dump Resistor System for LCD Magnet

CERN Document Server

Gaddi, A

2010-01-01

In this technical note we suggest a possible solution for the choice of the detector magnet dump resistor. The push-pull scenario for Linear Collider Detectors imposes new solutions for magnet powering and protection lines, else than what developed for LHC detectors. The magnet dump resistor is the protecting equipment that has the function of extracting a significant amount of magnetic stored energy, from the coil winding to a dump. The LCD magnet has to move with the experiment from the garage to the beam position, so it has to be compact and reliable at the same time. We make here a proposal for a passive water-cooled dumper, we calculate the minimum amount of water required, the resistor hot-spot temperature, the overall mechanical design. The electrical part is not covered by this note, as it can be assumed that the solutions adopted by LHC detector magnets, in terms of quench instrumentation, energy extraction and maximum voltage, are not significantly affected by the push-pull scenario.

H+-type and OH−-type biological protonic semiconductors and complementary devices

Science.gov (United States)

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

2013-01-01

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems. PMID:24089083

Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

International Nuclear Information System (INIS)

Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

2006-01-01

Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

Effect of diffusion on percolation threshold in thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2009-01-01

Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

Measurements of fuse and resistor characteristics for multi-megajoule capacitor bank application

International Nuclear Information System (INIS)

McDonald, K.F.; Smith, T.; Golden, J.; Conley, B.

1986-01-01

Experimental tests have been conducted on commercially available fuses and resistors under fast high voltage pulsed (10 μsec) conditions to determine their ability to protect capacitor bank components during faults. NRL's Modified Betatron Accelerator uses two multi-megajoule capacitor banks to power the toroidal and betatron magnetic field coils. The expensive high energy density capacitors in these banks must be protected from excessive peak current, voltage reversal, or charging beyond their electrical ratings in the occurrence of a fault. Adequate protection can be obtained with fuses and resistors in series with each parallel connected capacitor. The fuses must open reliably and hold off high voltage D.C. (10 - 20 kV), and the resistors must conduct high current and di/dt without failing from energy deposition or magnetic forces. The performance of the commercial fuses is well documented at low AC frequencies and currents (60 Hz/100 A) but data was not previously available for the fast high current pulsed conditions that prevail under actual fault conditions. A 20 kV 200 kJ, low inductance capacitor bank and ignitron switch were used to conduct the experiments. Peak currents in the fuses were approximately 170 kA at t - 6.5 μs. The final fuse hold-off voltage exceeded 8 kV. Currents in the resistors ranged from - 20 - 40 kA per resistor. The experimental results have been compared to the manufacturers data from minimum melt and maximum let-through and to exploding bridge wire computer models

Infant breathing rate counter based on variable resistor for pneumonia

Science.gov (United States)

Sakti, Novi Angga; Hardiyanto, Ardy Dwi; La Febry Andira R., C.; Camelya, Kesa; Widiyanti, Prihartini

2016-03-01

Pneumonia is one of the leading causes of death in new born baby in Indonesia. According to WHO in 2002, breathing rate is very important index to be the symptom of pneumonia. In the Community Health Center, the nurses count with a stopwatch for exactly one minute. Miscalculation in Community Health Center occurs because of long time concentration and focus on two object at once. This calculation errors can cause the baby who should be admitted to the hospital only be attended at home. Therefore, an accurate breathing rate counter at Community Health Center level is necessary. In this work, resistance change of variable resistor is made to be breathing rate counter. Resistance change in voltage divider can produce voltage change. If the variable resistance moves periodically, the voltage will change periodically too. The voltage change counted by software in the microcontroller. For the every mm shift at the variable resistor produce average 0.96 voltage change. The software can count the number of wave generated by shifting resistor.

Thermometry using 1/8 W carbon resistors in a temperature region around 10 mK

International Nuclear Information System (INIS)

Kobayasi, S.; Shinohara, M.; Ono, K.

1976-01-01

The resistance-temperature characteristics of 1/8 W carbon resistors of grade ERC-18SG, manufactured by Matsushita, with the nominal values of 48, 82, 100, 220 and 330 Ω have been measured in the region 4.2 K to 25 mK and their application as thermometers in this region is confirmed. For the 82 Ω resistor, measurements were taken at temperatures below 10mK. The temperature dependence of the resistance was found to be linear on the log-log plot over a wide range below 50 mK. The sensitivity remains finite even at 6 mK, but below 10 mK rapid measurements were prevented by a considerable increase in the thermal relaxation time. Measurement of the characteristics of several 100 Ω resistors from two different sets showed that resistors from the same set separate into two groups with different characteristics. This become appreciable at temperatures below 4.2 K, so it is difficult to predict the behaviour of Matsushite resistors below 4.2 K from the characteristics at higher temperatures. (author)

Improving the transient response of a bolt-clamped Langevin transducer using a parallel resistor.

Science.gov (United States)

Chang, Kuo Tsi

2003-08-01

This paper suggests a parallel resistor to reduce DC time constant and DC response time of the transient response, induced immediately after an AC voltage connected to a bolt-clamped Langevin transducer (BLT) is switched off. An equivalent circuit is first expressed. Then, an open-circuit transient response at the terminals induced by initial states is derived and measured, and thus parameters for losses of the BLT device are estimated by DC and AC time constants of the transient response. Moreover, a driving and measuring system is designed to determine transient response and steady-state responses of the BLT device, and a parallel resistor is connected to the BLT device to reduce the DC time constant. Experimental results indicate that the DC time constant greatly exceeds the AC time constant without the parallel resistor, and greatly decreases from 42 to 1 ms by a 100-kOmega parallel resistor.

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

Science.gov (United States)

Buehler, M. G. (Inventor)

1985-01-01

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Using an expiratory resistor, arterial pulse pressure variations predict fluid responsiveness during spontaneous breathing: an experimental porcine study.

Science.gov (United States)

Dahl, Michael K; Vistisen, Simon T; Koefoed-Nielsen, Jacob; Larsson, Anders

2009-01-01

Fluid responsiveness prediction is difficult in spontaneously breathing patients. Because the swings in intrathoracic pressure are minor during spontaneous breathing, dynamic parameters like pulse pressure variation (PPV) and systolic pressure variation (SPV) are usually small. We hypothesized that during spontaneous breathing, inspiratory and/or expiratory resistors could induce high arterial pressure variations at hypovolemia and low variations at normovolemia and hypervolemia. Furthermore, we hypothesized that SPV and PPV could predict fluid responsiveness under these conditions. Eight prone, anesthetized and spontaneously breathing pigs (20 to 25 kg) were subjected to a sequence of 30% hypovolemia, normovolemia, and 20% and 40% hypervolemia. At each volemic level, the pigs breathed in a randomized order either through an inspiratory and/or an expiratory threshold resistor (7.5 cmH2O) or only through the tracheal tube without any resistor. Hemodynamic and respiratory variables were measured during the breathing modes. Fluid responsiveness was defined as a 15% increase in stroke volume (DeltaSV) following fluid loading. Stroke volume was significantly lower at hypovolemia compared with normovolemia, but no differences were found between normovolemia and 20% or 40% hypervolemia. Compared with breathing through no resistor, SPV was magnified by all resistors at hypovolemia whereas there were no changes at normovolemia and hypervolemia. PPV was magnified by the inspiratory resistor and the combined inspiratory and expiratory resistor. Regression analysis of SPV or PPV versus DeltaSV showed the highest R2 (0.83 for SPV and 0.52 for PPV) when the expiratory resistor was applied. The corresponding sensitivity and specificity for prediction of fluid responsiveness were 100% and 100%, respectively, for SPV and 100% and 81%, respectively, for PPV. Inspiratory and/or expiratory threshold resistors magnified SPV and PPV in spontaneously breathing pigs during hypovolemia

Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei

2005-01-01

Full text : There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics, Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results an improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor. The new material has higher density, highee peak of temperature limit and greater physical strength compared with bulk ceramics currently used for pulsed power resistors. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-power density, as compared to existing components would be expected and derived from specific properties such as good thermal conductivity, high strength, thermal shock resistance and high temperature capability. The bulk resistor approach that weas proposed offers high reliability through better mechanical properties and simplicity of construction

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

Science.gov (United States)

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Field effect of screened charges: electrical detection of peptides and proteins by a thin-film resistor.

Science.gov (United States)

Lud, Simon Q; Nikolaides, Michael G; Haase, Ilka; Fischer, Markus; Bausch, Andreas R

2006-02-13

For many biotechnological applications the label-free detection of biomolecular interactions is becoming of outstanding importance. In this Article we report the direct electrical detection of small peptides and proteins by their intrinsic charges using a biofunctionalized thin-film resistor. The label-free selective and quantitative detection of small peptides and proteins is achieved using hydrophobized silicon-on-insulator (SOI) substrates functionalized with lipid membranes that incorporate metal-chelating lipids. The response of the nanometer-thin conducting silicon film to electrolyte screening effects is taken into account to determine quantitatively the charges of peptides. It is even possible to detect peptides with a single charge and to distinguish single charge variations of the analytes even in physiological electrolyte solutions. As the device is based on standard semiconductor technologies, parallelization and miniaturization of the SOI-based biosensor is achievable by standard CMOS technologies and thus a promising basis for high-throughput screening or biotechnological applications.

Thermometric characteristics of some 1/8W carbon resistors in the millikelvin range

International Nuclear Information System (INIS)

Radebaugh, R.; Holste, J.C.; Siegwarth, J.D.

1974-01-01

Gotch and Awano (Cryogenic Engineering (Tokyo); 8:18 (1973)) have reported on the useful characteristics of 1/8W 100Ω Matsushita carbon resistors (grade ERC-18GK) as thermometers for the region 0.4K and 4.2K. Measurements on the resistance characteristics of this grade of resistors from 11mK to 1K are reported here. Nominal resistances of 56Ω, 68Ω, 82Ω, 100Ω, and 220Ω have been measured. It is found that the 56Ω, 68Ω and 82 Ω resistors make useful thermometers down to at least 11mK. A comparison of the resistance behaviour of units immersed in dilute He 3 -He 4 with those outside the liquid is also made. (author)

Physical Analysis of an Electric Resistor Heating

Science.gov (United States)

Perea Martins, J. E. M.

2018-01-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

Novel charge sensitive preamplifier without high-value feedback resistor

International Nuclear Information System (INIS)

Xi Deming

1992-01-01

A novel charge sensitive preamplifier is introduced. The method of removing the high value feedback resistor, the circuit design and analysis are described. A practical circuit and its measured performances are provided

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Resistor trimming geometry; past, present and future

International Nuclear Information System (INIS)

Alafogianni, M; Penlington, R; Birkett, M

2016-01-01

This paper explores the key developments in thin film resistive trimming geometry for use in the fabrication of discrete precision resistors. Firstly an introduction to the laser trimming process is given with respect to well established trim geometries such as the plunge, 'L' and serpentine cuts. The effect of these trim patterns on key electrical properties of resistance tolerance and temperature co-efficient of resistance (TCR) of the thin films is then discussed before the performance of more recent geometries such as the three-contact and random trim approaches are reviewed. In addition to the properties of the standard trim patterns, the concept of the heat affected zone (HAZ) and ablation energy and the effect of introducing a 'fine' trim in areas of low current density to improve device performance are also studied. It is shown how trimming geometry and laser parameters can be systematically controlled to produce thin film resistors of the required properties for varying applications such as high precision, long term stability and high power pulse performance

Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor.

Science.gov (United States)

Wang, Xiaozhen; Lu, Tianjian; Yu, Xin; Jin, Jian-Ming; Goddard, Lynford L

2017-07-04

We studied the nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtained consistent results. In the theoretical analysis, we used a three-dimensional coupled electrical-thermal-mechanical simulation and obtained the temperature and displacement field of the suspended resistor under a direct current (DC) input voltage. In the experiment, we recorded a sequence of images of the axial thermal expansion of the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumination diffraction phase microscopy (epi-DPM). This method accurately measured nanometer level relative height changes of the resistor in a temporally and spatially resolved manner. Upon application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance of 1.14 Ω and in relative height of 3.5 nm, which agreed reasonably well with the predicted values of 1.08 Ω and 4.4 nm, respectively.

History of resistor array infrared projectors: hindsight is always 100% operability

Science.gov (United States)

Williams, Owen M.; Goldsmith, George C., II; Stockbridge, Robert G.

2005-05-01

Numerous infrared scene projection technologies have been investigated since the 1970s. Notably, from the late 1980s the development of the first resistor array infrared projectors gained leverage from the strong concurrent developments within focal plane array imaging technology, linked by the common need for large integrated circuits comprising a 2-dimensional array of interconnected unit cells. In the resistor array case, it is the unit cell comprising the resistively heated emitter and its dedicated drive circuit that determines the projector response to its associated scene generator commands. In this paper we review the development of resistor array technology from a historical perspective, concentrating on the unit cell developments. We commence by describing the technological innovations that forged the way, sharing along the way stories of the successes and failures, all of which contributed to the steady if somewhat eventful growth of the critical knowledge base that underpins the strength of today's array technology. We conclude with comments on the characteristics and limitations of the technology and on the prospects for future array development.

Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

Science.gov (United States)

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

2016-07-22

The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

Measurement of small ion beams by thermal ionisation mass spectrometry using new 1013 Ohm resistors

International Nuclear Information System (INIS)

Koornneef, J.M.; Bouman, C.; Schwieters, J.B.; Davies, G.R.

2014-01-01

Highlights: • First data are presented using 10 13 Ohm resistors connected to Faraday collectors. • 5 prototype 10 13 Ohm resistors were installed in a TRITON-Plus TIMS. • Performance was tested by measuring Sr and Nd isotope ratios on  13 Ohm resistors perform better than ion counting and 10 11 Ohm resistors. • Fourth decimal variability can be resolved for Nd isotope ratios on 10 pg samples. - Abstract: We tested 5 newly manufactured – prototype – 10 13 Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10 11 Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2 × 10 −16 to 1 × 10 −12 A, corresponding to intensities of 32 μV to 100 mV on a default 10 11 Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10 13 compared 10 12 Ohm resistors and to the default 10 11 Ohm resistors. At an 87 Sr ion current of 3 × 10 −14 A (3 mV on a 10 11 Ohm amplifier) the internal precision (2 SE) of 87 Sr/ 86 Sr is 5 times better for 10 13 Ohm resistors compared to 10 11 Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low 87 Sr/ 86 Sr compared to the long term average (e.g. 10 pg average = 0.710083 ± 164 (n = 11) instead of 0.710244 ± 12, n = 73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the

Physical analysis of an electric resistor heating

Science.gov (United States)

Perea Martins, J. E. M.

2018-05-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

Conductivity of a square-lattice bond-mixed resistor network

International Nuclear Information System (INIS)

Costa, U.M.S.; Tsallis, C.; Schwaccheim, G.

1985-01-01

Within a real-space renormalization-group framework based on self-dual clusters, the conductivity of a square-lattice quenched bond-random resistor network is calculated, the conductance on each bond being g 1 or g 2 with probabilities (1-p) and p respectively. The group recovers several already known exact results (including slopes), and is consequently believed to be numerically quite reliable for almost all values of p, and all ratios g 1 /g 2 (in particular, g 1 =0 and g 1 =infinite with finite g 2 respectively correspond to the insulator-resitor and superconductor-resistor mixtures). In addition to that, an heuristic analytic expression is proposed for the conductivity which is believed to be a quite satisfactory approximation everywhere not too close to the percolation point. (Author) [pt

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

International Nuclear Information System (INIS)

Lotkhov, Sergey V

2013-01-01

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Resistor Networks based on Symmetrical Polytopes

Directory of Open Access Journals (Sweden)

Jeremy Moody

2015-03-01

Full Text Available This paper shows how a method developed by Van Steenwijk can be generalized to calculate the resistance between any two vertices of a symmetrical polytope all of whose edges are identical resistors. The method is applied to a number of cases that have not been studied earlier such as the Archimedean polyhedra and their duals in three dimensions, the regular polytopes in four dimensions and the hypercube in any number of dimensions.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Ambipolar organic heterojunction transistors with various p-type semiconductors

International Nuclear Information System (INIS)

Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

2008-01-01

Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

Test of the Starling resistor model in the human upper airway during sleep.

Science.gov (United States)

Wellman, Andrew; Genta, Pedro R; Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Loring, Stephen H; White, David P; Jackson, Andrew C; Pedersen, Ole F; Butler, James P

2014-12-15

The human pharyngeal airway during sleep is conventionally modeled as a Starling resistor. However, inspiratory flow often decreases with increasing effort (negative effort dependence, NED) rather than remaining fixed as predicted by the Starling resistor model. In this study, we tested a major prediction of the Starling resistor model--that the resistance of the airway upstream from the site of collapse remains fixed during flow limitation. During flow limitation in 24 patients with sleep apnea, resistance at several points along the pharyngeal airway was measured using a pressure catheter with multiple sensors. Resistance between the nose and the site of collapse (the upstream segment) was measured before and after the onset of flow limitation to determine whether the upstream dimensions remained fixed (as predicted by the Starling resistor model) or narrowed (a violation of the Starling resistor model). The upstream resistance from early to mid inspiration increased considerably during flow limitation (by 35 ± 41 cmH2O · liter(-1) · s(-1), P < 0.001). However, there was a wide range of variability between patients, and the increase in upstream resistance was strongly correlated with the amount of NED (r = 0.75, P < 0.001). Therefore, patients with little NED exhibited little upstream narrowing (consistent with the Starling model), and patients with large NED exhibited large upstream narrowing (inconsistent with the Starling model). These findings support the idea that there is not a single model of pharyngeal collapse, but rather that different mechanisms may dominate in different patients. These differences could potentially be exploited for treatment selection. Copyright © 2014 the American Physiological Society.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

International Nuclear Information System (INIS)

Norwood, D.P.

1989-01-01

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

Thermoelectric properties of semiconductor nanowire networks

Science.gov (United States)

Roslyak, Oleksiy; Piryatinski, Andrei

2016-03-01

To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. I. Electrical stability

International Nuclear Information System (INIS)

Murakami, M.; Alessandrini, E.I.; Kim, K.K.

1984-01-01

Bilayered Au/Ti films are very attractive for use as resistor materials of experimental Nb/Pb-alloy Josephson junction devices. In order to predict the electrical stability of the Au/Ti resistors during storage at room temperature, changes in microstructure and electrical resistivity of Ti and Au/Ti films during isothermal annealing at temperatures ranging from 298--473 K were studied using transmission electron microscopy, x-ray diffraction, and electrical measurements. Growth of Ti grains during annealing was observed in these films. The activation energy for the grain growth was determined to be 1.51 eV. Decreases in the sheet resistance measured at 4.2 K were observed at the early stages of isothermal annealing. By analyzing the annealing temperature dependence of rates of resistance changes, the activation energy of 1.49 eV was obtained. This energy value is very close to that obtained for the grain growth and, therefore, one of the main causes in the resistance decrease is believed to be due to the growth of Ti grains. Based on the present results, a model to predict the electrical resistance change for the Au/Ti films during storage at room temperature was established. The model predicted that change in the resistance can be significantly reduced by preannealing the resistors at an elevated temperature. The prediction was supported by the experiment and an excellent quantitative agreement between measured resistance values and those predicted by the model was obtained. Based on this model, the change was predicted to be -1.5% after about 3 years at room temperature, if the resistors were preannealed at 353 K for 10 h. This resistor stability is satisfactory for designing logic and memory circuits of Josephson devices, and it can be increased simply by preannealing for longer times at 353 K

Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

Energy Technology Data Exchange (ETDEWEB)

Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F, Junior, Sebastiao V [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

1994-12-31

This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Science.gov (United States)

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

International Nuclear Information System (INIS)

Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

2008-01-01

The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

Intermittency-induced criticality in a resistor-inductor-diode circuit.

Science.gov (United States)

Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

2017-04-01

The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

Semiconductor neutron detectors based on new types of materials

International Nuclear Information System (INIS)

Pochet, T.; Foulon, F.

1993-01-01

Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

Science.gov (United States)

Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

2017-10-01

Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

Hartman effect in a Kane-type semiconductor quantum ring

International Nuclear Information System (INIS)

Cakmaktepe, S

2007-01-01

The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov-Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux

Multifractal properties of resistor diode percolation.

Science.gov (United States)

Stenull, Olaf; Janssen, Hans-Karl

2002-03-01

Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

Method of triggering the vacuum arc in source with a resistor

International Nuclear Information System (INIS)

Zheng Le; Lan Zhaohui; Long Jidong; Peng Yufei; Li Jie; Yang Zhen; Dong Pan; Shi Jinshui

2014-01-01

Background: The metal vapor vacuum arc (MEVVA) ion source is a common source which provides strong metal ion flow. To trigger this ion source, a high-voltage trigger pulse generator and a high-voltage isolation pulse transformer are needed, which makes the power supply system complex. Purpose: To simplify the power supply system, a trigger method with a resistor was introduced, and some characteristics of this method were studied. Methods: The ion flow provided by different main arc current was measured, as well as the trigger current. The main arc current and the ion current were recorded with different trigger resistances. Results: Experimental results showed that, within a certain range of resistances, the larger the resistance value, the more difficult it was to success fully trigger the source. Meanwhile, the main arc rising edge became slower on the increasing in the trigger time. However, the resistance value increment had hardly impact on the intensity of ion flow extracted in the end, The ion flow became stronger with the increasing main arc current. Conclusion: The power supply system of ion source is simplified by using the trigger method with a resistor. Only a suitable resistor was needed to complete the conversion process from trigger to arc initiating. (authors)

A new computer-aided simulation model for polycrystalline silicon film resistors

Science.gov (United States)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Continuously forced ballast resistor model for superconducting hot spots

International Nuclear Information System (INIS)

Ausloos, M.

1981-01-01

To neglect the Thomson effect in the ballast resistor theory is an incorrect assumption since it measures the velocity of the thermal grain boundaries. Due to the constant rate of heating or cooling, large oscillations are predicted in dR/dT near Tsub(c). (orig.)

Advanced ceramic composite for high energy resistors : Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

2005-01-01

There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new, new, conductive, bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor

Biphase sinusoidal oscillator based on negative resistor.

Science.gov (United States)

Bayard, Jean

2010-06-01

This paper describes a biphase sinusoidal generator which provides two signals: v(ref)=V(M) sin(omegat) and v(out)=V(M) sin(omegat+DeltaPhi), where DeltaPhi is in the range 0, pi/2 or -pi/2, 0 and is not dependent on the frequency value. It is based on a negative resistor and it requires very few components. SPICE simulations and measurements on an experimental setup confirm the theoretical analysis.

Chemical interaction in resistors based on lead ruthenite with additions of niobium(5) oxide compounds

International Nuclear Information System (INIS)

Lozinskij, N.S.; Shevtsova, N.A.; Gruba, A.I.; Volkov, V.I.

1986-01-01

The method of X-ray phase analysis was used to study chemical interaction in isothermal cross-section of Pb 2 RU 2 O 6 -Nb 2 O 5 , Rbsub(2)Rusub(2)Osub(6)-NbWOsub(5.5) and Rb 2 Ru 2 O 6 -Pb 2 Nb 2 O 7 systems at 850 deg C as well as in models of real ruthenium resistors. Chemical interaction is stated to take place in systems with niobium (5) oxide and NbWOsub(5.5). Niobium (5) and tungsten (6) displace ruthenium (4) from its compounds with formation of their lead salts. Similar chemical interactions between current-carrying phase of the resistor and modifiers representing niobium-containing take place in models of components of the studied systems take place in models of resistors

High-precision ID-TIMS zircon U-Pb geochronology using new 1013 Ohm resistors

Science.gov (United States)

Von Quadt, A.; Buret, Y.; Large, S.; Peytcheva, I.; Trinquier, A.; Wotzlaw, J. F.

2015-12-01

Faraday cups equipped with high gain amplifiers provide a means to measure small ion beams in static mode without the limited linear range of ion counting systems. We tested the application of newly available 1013 Ohm resistors to ID-TIMS zircon U-Pb geochronology using a range of natural and synthetic reference materials. The TritonPlus-RPQ at the Institute of Geochemistry and Petrology, ETH Zurich, is equipped with five new 1013 Ohm resistors and one MasCom secondary electron multiplier, allowing to measure the 202-204-205-206-207-208Pb masses in static mode. U is measured subsequently as U-oxide (265-267-270UO2) during a second step, also in static Faraday mode. The gain calibration of the 1013 Ohm resistors was performed using the procedure of Trinquier (2014), with 144Nd-146Nd being measured using 1011 Ohm resistor and 142-143-145-148-150Nd being measured using 1013 Ohm resitors (Trinquier, 2014; Koornneef et al., 2014). Standard deviations of the noise in all five new 1013 Ohm resistors are lower than 5.0 x 10-6 over a 6 month period, with no shift occurring over this time interval. This new detector set-up was tested by analyzing natural zircon standard materials and synthetic U/Pb solutions (www.earthime.org), ranging in age from ~2 Ma to ~600 Ma. All natural zircon standards were chemically abraded (Mattinson, 2005) and all samples were spiked with the ET2535 tracer solution. U-Pb dates obtained using the static measurement routine are compared to measurements employing dynamic peak jumping routines on the MasCom multiplier. This study illustrates the benefits and current limitations of using high gain amplifiers to measure small ion beams for zircon U-Pb geochronology compared to conventional dynamic ion counting techniques. Mattinson, J.M. (2005) Chemical Geology 220:47-66; Trinquier, A. (2014) Application Note 30281; Koornneef, J. et al (2014) Analytica Chimica Acta 819:49-55.

Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

Science.gov (United States)

Chen, Hua-Pin

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

Directory of Open Access Journals (Sweden)

Hua-Pin Chen

2014-01-01

Full Text Available This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs, two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Measurement of small ion beams by thermal ionisation mass spectrometry using new 10(13) Ohm resistors.

Science.gov (United States)

Koornneef, J M; Bouman, C; Schwieters, J B; Davies, G R

2014-03-28

We tested 5 newly manufactured - prototype - 10(13)Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10(11)Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2×10(-16) to 1×10(-12) A, corresponding to intensities of 32 μV to 100 mV on a default 10(11)Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10(13) compared 10(12)Ohm resistors and to the default 10(11)Ohm resistors. At an (87)Sr ion current of 3×10(-14) A (3 mV on a 10(11)Ohm amplifier) the internal precision (2 SE) of (87)Sr/(86)Sr is 5 times better for 10(13)Ohm resistors compared to 10(11)Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low (87)Sr/(86)Sr compared to the long term average (e.g. 10 pg average=0.710083±164 (n=11) instead of 0.710244±12, n=73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the data. The external reproducibility of (143)Nd/(144)Nd on 100 pg samples is 125 ppm and 3.3‰ on 10 pg samples (2 RSD=relative standard deviation, n=10). Thus, variability in Nd and Sr isotope ratios in the 4th decimal place, e.g. (143)Nd/(144)Nd 0.5110-0.5119 or (87)Sr/(86)Sr 0.7100-0.7109, can be resolved in 10 to 100 pg samples provided that the procedural blanks and chemical separation are optimal. For measurements in the beam

A study on embedded resistor components fabricated by laser micro-cladding and rapid prototype

International Nuclear Information System (INIS)

Li Huiling; Zeng Xiaoyan

2006-01-01

With the rapid development of IC and packaging, electronic devices are required to be smaller, to have a high-density integration, to become multifunction and to be of lower cost and high-reliability. Thick-film technology is not able to meet the current developing demands because of its shortcomings, such as the limit of pattern resolution, the severe torsion and delay of high-speed signal transmission. The speed and quality of signal transmission will be improved if embedded resistor components are directly integrated in the multiplayer substrate of multi-chip or laminated module, and high-density integration and reliability are achieved because the short interconnection and the less soldering point. In this paper, a technique named laser micro-cladding and rapid prototype is used to directly fabricate embedded resistor units on the multiplayer ceramic substrate without using a mask and high-temperature sintering, and without trimming resistor, which will simplify processing and decrease cost as well as improving high-speed and reliable performance

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

International Nuclear Information System (INIS)

Pandey, R.K.

2008-01-01

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

Science.gov (United States)

Sun, Yonghai; Yeow, John T W; Jaffray, David A

2013-10-25

A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoporous carbon tunable resistor/transistor and methods of production thereof

Science.gov (United States)

Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

2014-04-22

In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

Science.gov (United States)

Hamou, R F; Macdonald, J R; Tuncer, E

2009-01-14

How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Science.gov (United States)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

2016-05-06

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Processing, microstructure, and electric properties of buried resistors in low-temperature co-fired ceramics

International Nuclear Information System (INIS)

Yang, Pin; Rodriguez, Mark A.; Kotula, Paul; Miera, Brandon K.; Dimos, Duane

2001-01-01

The electrical properties of ruthenium oxide based devitrifiable resistors embedded within low-temperature co-fired ceramics were investigated from -100 o C to 100 o C. Special attention was given to the processing conditions and their effects on resistance and temperature coefficient of resistance (TCR). Results indicate that within this temperature range the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle--particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle--particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The tradeoff between these two effects results in an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these buried resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural changes in the resistor, which in turn, are controlled by the processing conditions

Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

International Nuclear Information System (INIS)

Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

2016-01-01

One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm"3 size) with "2"2Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhonghai [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Sun, Xishan [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Lou, Kai [Department of Electrical and Computer Engineering, Rice University, Houston, Tx (United States); Meier, Joseph [Department of Imaging Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Zhou, Rong; Yang, Chaowen [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Zhu, Xiaorong [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Shao, Yiping [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States)

2016-04-21

One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm{sup 3} size) with {sup 22}Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

Charge transport in conjugated polymer-semiconductor nanoparticle composite near the percolation threshold

Science.gov (United States)

Cardoso, L. S.; Gonçalves, G. E.; Kanda, D. H. F.; Bianchi, R. F.; Nagashima, H. N.

2017-12-01

This paper describes a new statistical model to predict the frequency dependence of the conductivity of conjugated polymer-semiconductor nanoparticle composites. The model considers AC conduction in an inhomogeneous medium represented by a two-dimensional model of resistor network. The conductivity between two neighboring sites in the polymer matrix and the semiconductor particles is assumed to obey the random free energy barrier model and the Drude model, respectively. The real and imaginary parts of the AC conductivity were determined using the transfer-matrix technique, and the statistical model was applied to experimental data of thin films composed of polyaniline (PANI) and indium-tin-oxide (ITO) nanoparticles. The conductivity critical exponent ( s) obtained in two dimensions for PANI/ITO films below the percolation threshold was found to be 2.7, which is greater than the universal value of s described by the classical percolation theory ( s = 1.3). This non-universality is explained by the existence of a local electric field distribution in the bulk of the nanocomposite. Finally, these results are discussed in terms of the distribution of potential barriers that vary according to the concentration of ITO amount in the composite.

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

International Nuclear Information System (INIS)

Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

2006-01-01

A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

Positron diffusion in zinc-blende-type semiconductors

International Nuclear Information System (INIS)

Singh, R.P.; Singh, M.

1992-01-01

A theory of positron diffusion in the presence of positron scattering with acoustic, piezoelectric-acoustic, and optical phonons in zinc-blende-type semiconductors is developed. The velocity-velocity correlation function is used to calculate the diffusion coefficient and the Green's function is used to calculate the correlation function. In this formulation the relaxation time automatically appears through the imaginary part of the self-energy. The effect of screening is included within the Thomas-Fermi approximation. The theory is used to calculate the energy relaxation time and diffusion length of positrons in GaAs. It is shown that the transverse and longitudinal phonons contribute almost the same amount towards the relaxation time in the piezoelectric-acoustic-phonon scattering of positrons. It is also found that the contribution of piezoelectric-acoustic-phonon scattering is about 10% to that of acoustic-phonon scattering at low temperatures. We obtained a fairly good agreement between our theory and experimental results available to us. It is found that optical-phonon scattering plays an important role in getting good agreement between theory and experiment at high temperatures

Single pole rapid reclosing: effective damping of ehv switching surges through discharge resistors

Energy Technology Data Exchange (ETDEWEB)

Heinemann, T

1965-04-30

The stability of interconnecting circuits is very important and loss of synchronism of a complete network due to a temporary single-phase fault is operationally and economically undesirable. The use of grounding resistors together with load-break isolators which can be electrically or mechanically coupled to the circuit-breakers yield interesting possibilities in extra-high-voltage networks. The three problems, i.e., discharging of charged lines, damping of switching surges, and single-pole rapid-reclosing, can be solved through the use of a number of similar resistors and load-break isolators connected in series according to the voltage. The thermal and electrical stresses of the resistors can be kept within permissible limits. The time required for arc extinction and the limits in respect of length of lines will have to be determined by actual tests. For single-pole rapid-reclosing during a single-phase earth fault the switching operations on both sides of the line must be simultaneous. Because of the very small divergence of the opening and making times of modern circuit-breakers it will be sufficient only to synchronise the operating impulse.

Pyramidal resistor networks for electrical impedance tomography with partial boundary measurements

International Nuclear Information System (INIS)

Borcea, L; Mamonov, A V; Druskin, V; Vasquez, F Guevara

2010-01-01

We introduce an inversion algorithm for electrical impedance tomography (EIT) with partial boundary measurements in two dimensions. It gives stable and fast reconstructions using sparse parameterizations of the unknown conductivity on optimal grids that are computed as part of the inversion. We follow the approach in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD thesis Rice University, Houston, TX, USA) that connects inverse discrete problems for resistor networks to continuum EIT problems, using optimal grids. The algorithm in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD Thesis Rice University, Houston, TX, USA) is based on circular resistor networks, and solves the EIT problem with full boundary measurements. It is extended in Borcea et al (2010 Inverse Problems 26 045010) to EIT with partial boundary measurements, using extremal quasi-conformal mappings that transform the problem to one with full boundary measurements. Here we introduce a different class of optimal grids, based on resistor networks with pyramidal topology, that is better suited for the partial measurements setup. We prove the unique solvability of the discrete inverse problem for these networks and develop an algorithm for finding them from the measurements of the Dirichlet to Neumann map. Then, we show how to use the networks to define the optimal grids and to approximate the unknown conductivity. We assess the performance of our approach with numerical simulations and compare the results with those in Borcea et al (2010)

Analyses of power output of piezoelectric energy-harvesting devices directly connected to a load resistor using a coupled piezoelectric-circuit finite element method.

Science.gov (United States)

Zhu, Meiling; Worthington, Emma; Njuguna, James

2009-07-01

This paper presents, for the first time, a coupled piezoelectric-circuit finite element model (CPC-FEM) to analyze the power output of a vibration-based piezoelectric energy-harvesting device (EHD) when it is connected to a load resistor. Special focus is given to the effect of the load resistor value on the vibrational amplitude of the piezoelectric EHD, and thus on the current, voltage, and power generated by the device, which are normally assumed to be independent of the load resistor value to reduce the complexity of modeling and simulation. The presented CPC-FEM uses a cantilever with a sandwich structure and a seismic mass attached to the tip to study the following characteristics of the EHD as a result of changing the load resistor value: 1) the electric outputs: the current through and voltage across the load resistor; 2) the power dissipated by the load resistor; 3) the displacement amplitude of the tip of the cantilever; and 4) the shift in the resonant frequency of the device. It is found that these characteristics of the EHD have a significant dependence on the load resistor value, rather than being independent of it as is assumed in most literature. The CPC-FEM is capable of predicting the generated output power of the EHD with different load resistor values while simultaneously calculating the effect of the load resistor value on the displacement amplitude of the tip of the cantilever. This makes the CPC-FEM invaluable for validating the performance of a designed EHD before it is fabricated and tested, thereby reducing the recurring costs associated with repeat fabrication and trials. In addition, the proposed CPC-FEM can also be used for producing an optimized design for maximum power output.

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

Science.gov (United States)

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconductor device and method of manufacturing the same

NARCIS (Netherlands)

2009-01-01

The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type,

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

Science.gov (United States)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-17

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Studies of tantalum nitride thin film resistors

International Nuclear Information System (INIS)

Langley, R.A.

1975-01-01

Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

Semiconductor resistance thermometer for the temperature range 300-0.3 K

International Nuclear Information System (INIS)

Zinov'eva, K.N.; Zarubin, L.I.; Nemish, I.Yu.; Vorobkalo, F.M.; Boldarev, S.T.; AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov)

1979-01-01

Thermometric characteristics of semiconductor resistor thermometers for the temperature range from 300 to 0.3 K and from 77 to 0.3 K are given. Temperature dependence of thermometer resistances in the 300-1.3 K range was measured in cryostats with pumping-out of N 2 , H 2 and 4 He. For measurements below 1.3 K use was made of a 3 H- 4 He dissolving cryostat. The accuracy of measuring temperatures in the 1.3-0.3 K range is not below +-0.003 K, the error in determining thermometer resistances does not exceed 1%. The analysis of obtained thermometric characteristics of several series of semiconductor resistance thermometers showed that observed insignificant spread of resistances of thermometers in one series and identity of characteristics allows them to be used without preliminary calibration for relatively coarse measurements in the range from 3O0 to 0.3 K. Besides, it has been found that in the 4.2-0.3 K range the thermometric characteristics represent a straight line in the lgR-Tsup(-n) coordinates, where R is the thermometer resistance, T is the temperature and n=0.5. Thus, the thermometers of the same series can be calibrated only in 2 or 3 reference point measurements

Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

Directory of Open Access Journals (Sweden)

Philippe Leduc

2002-06-01

Full Text Available Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate". The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

Leaf venation, as a resistor, to optimize a switchable IR absorber.

Science.gov (United States)

Alston, M E; Barber, R

2016-08-24

Leaf vascular patterns are the mechanisms and mechanical support for the transportation of fluidics for photosynthesis and leaf development properties. Vascular hierarchical networks in leaves have far-reaching functions in optimal transport efficiency of functional fluidics. Embedding leaf morphogenesis as a resistor network is significant in the optimization of a translucent thermally functional material. This will enable regulation through pressure equalization by diminishing flow pressure variation. This paper investigates nature's vasculature networks that exhibit hierarchical branching scaling applied to microfluidics. To enable optimum potential for pressure drop regulation by algorithm design. This code analysis of circuit conduit optimization for transport fluidic flow resistance is validated against CFD simulation, within a closed loop network. The paper will propose this self-optimization, characterization by resistance seeking targeting to determine a microfluidic network as a resistor. To advance a thermally function material as a switchable IR absorber.

Nonlinear random resistor diode networks and fractal dimensions of directed percolation clusters.

Science.gov (United States)

Stenull, O; Janssen, H K

2001-07-01

We study nonlinear random resistor diode networks at the transition from the nonpercolating to the directed percolating phase. The resistor-like bonds and the diode-like bonds under forward bias voltage obey a generalized Ohm's law V approximately I(r). Based on general grounds such as symmetries and relevance we develop a field theoretic model. We focus on the average two-port resistance, which is governed at the transition by the resistance exponent straight phi(r). By employing renormalization group methods we calculate straight phi(r) for arbitrary r to one-loop order. Then we address the fractal dimensions characterizing directed percolation clusters. Via considering distinct values of the nonlinearity r, we determine the dimension of the red bonds, the chemical path, and the backbone to two-loop order.

Biased resistor network model for electromigration failure and related phenomena in metallic lines

Science.gov (United States)

Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

2004-11-01

Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.

2013-11-25

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

Maximum Bandwidth Enhancement of Current Mirror using Series-Resistor and Dynamic Body Bias Technique

Directory of Open Access Journals (Sweden)

V. Niranjan

2014-09-01

Full Text Available This paper introduces a new approach for enhancing the bandwidth of a low voltage CMOS current mirror. The proposed approach is based on utilizing body effect in a MOS transistor by connecting its gate and bulk terminals together for signal input. This results in boosting the effective transconductance of MOS transistor along with reduction of the threshold voltage. The proposed approach does not affect the DC gain of the current mirror. We demonstrate that the proposed approach features compatibility with widely used series-resistor technique for enhancing the current mirror bandwidth and both techniques have been employed simultaneously for maximum bandwidth enhancement. An important consequence of using both techniques simultaneously is the reduction of the series-resistor value for achieving the same bandwidth. This reduction in value is very attractive because a smaller resistor results in smaller chip area and less noise. PSpice simulation results using 180 nm CMOS technology from TSMC are included to prove the unique results. The proposed current mirror operates at 1Volt consuming only 102 µW and maximum bandwidth extension ratio of 1.85 has been obtained using the proposed approach. Simulation results are in good agreement with analytical predictions.

Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

Science.gov (United States)

Zoellner, Brandon

Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

Depth of interaction detection with enhanced position-sensitive proportional resistor network

International Nuclear Information System (INIS)

Lerche, Ch.W.; Benlloch, J.M.; Sanchez, F.; Pavon, N.; Gimenez, N.; Fernandez, M.; Gimenez, M.; Sebastia, A.; Martinez, J.; Mora, F.J.

2005-01-01

A new method of determining the depth of interaction of γ-rays in thick inorganic scintillation crystals was tested experimentally. The method uses the strong correlation between the width of the scintillation light distribution within large continuous crystals and the γ-ray's interaction depth. This behavior was successfully reproduced by a theoretical model distribution based on the inverse square law. For the determination of the distribution's width, its standard deviation σ is computed using an enhanced position-sensitive proportional resistor network which is often used in γ-ray-imaging devices. Minor changes of this known resistor network allow the analog and real-time determination of the light distribution's 2nd moment without impairing the measurement of the energy and centroid. First experimental results are presented that confirm that the described method works correctly. Since only some cheap electronic components, but no additional detectors or crystals are required, the main advantage of this method is its low cost

A unique metal-semiconductor interface and resultant electron transfer phenomenon

OpenAIRE

Taft, S. L.

2012-01-01

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film.

Science.gov (United States)

Wan, Zhenni; Darling, Robert B; Anantram, M P

2015-11-11

Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different I-V characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

Energy Technology Data Exchange (ETDEWEB)

Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

2012-01-31

In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Structural trends in off stoichiometric chalcopyrite type compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Stephan, Christiane

2011-03-15

Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

Structural trends in off stoichiometric chalcopyrite type compound semiconductors

International Nuclear Information System (INIS)

Stephan, Christiane

2011-01-01

Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

Small-signal analysis of granular semiconductors

Energy Technology Data Exchange (ETDEWEB)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

2010-11-01

The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

Small-signal analysis of granular semiconductors

International Nuclear Information System (INIS)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

2010-01-01

The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

Thermal analysis and temperature characteristics of a braking resistor for high-speed trains for changes in the braking current

Science.gov (United States)

Lee, Dae-Dong; Kang, Hyun-Il; Shim, Jae-Myung

2015-09-01

Electric brake systems are used in high-speed trains to brake trains by converting the kinetic energy of a railway vehicle to electric energy. The electric brake system consists of a regenerative braking system and a dynamic braking system. When the electric energy generated during the dynamic braking process is changed to heat through the braking resistor, the braking resistor can overheat; thus, failures can occur to the motor block. In this paper, a braking resistor for a high-speed train was used to perform thermal analyses and tests, and the results were analyzed. The analyzed data were used to estimate the dependence of the brake currents and the temperature rises on speed changes up to 300 km/h, at which a test could not be performed.

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Science.gov (United States)

Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

2005-01-01

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

Scaling in small-world resistor networks

International Nuclear Information System (INIS)

Korniss, G.; Hastings, M.B.; Bassler, K.E.; Berryman, M.J.; Kozma, B.; Abbott, D.

2006-01-01

We study the effective resistance of small-world resistor networks. Utilizing recent analytic results for the propagator of the Edwards-Wilkinson process on small-world networks, we obtain the asymptotic behavior of the disorder-averaged two-point resistance in the large system-size limit. We find that the small-world structure suppresses large network resistances: both the average resistance and its standard deviation approaches a finite value in the large system-size limit for any non-zero density of random links. We also consider a scenario where the link conductance decays as a power of the length of the random links, l -α . In this case we find that the average effective system resistance diverges for any non-zero value of α

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply

Energy Technology Data Exchange (ETDEWEB)

Mi, J.; Tan, Y.; Zhang, W.

2011-03-28

For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

A novel Silicon Photomultiplier with bulk integrated quench resistors: utilization in optical detection and tracking applications for particle physics

Energy Technology Data Exchange (ETDEWEB)

Petrovics, Stefan, E-mail: stp@hll.mpg.de [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Andricek, Ladislav [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Diehl, Inge; Hansen, Karsten [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Jendrysik, Christian [Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg (Germany); Krueger, Katja [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Lehmann, Raik; Ninkovic, Jelena [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Reckleben, Christian [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Richter, Rainer; Schaller, Gerhard; Schopper, Florian [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Sefkow, Felix [DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

2017-02-11

Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes (PMTs) in many applications, thanks to ongoing developments and advances in their technology. Conventional SiPMs are generally an array of avalanche photo diodes, operated in Geiger mode and read out in parallel, thus leading to the necessity of a high ohmic quenching resistor. This resistor enables passive quenching and is usually located on top of the array, limiting the fill factor of the device. In this paper, a novel detector concept with a bulk integrated quenching resistor will be recapped. In addition, due to other advantages of this novel detector design, a new concept, in which these devices will be utilized as tracking detectors for particle physics applications will be introduced, as well as first simulation studies and experimental measurements of this new approach. - Highlights: • A novel SiPM concept with bulk integrated quenching resistor is shown. • First prototypes of these SiPMs as tracking detectors are proposed. • Simulations of the Geiger efficiency suggest feasible operations at low overbias. • First measurements of the electron detection efficiency show promising results. • Measurements are in good agreement with the simulations.

Development of a high sensitivity pinhole type gamma camera using semiconductors for low dose rate fields

Science.gov (United States)

Ueno, Yuichiro; Takahashi, Isao; Ishitsu, Takafumi; Tadokoro, Takahiro; Okada, Koichi; Nagumo, Yasushi; Fujishima, Yasutake; Yoshida, Akira; Umegaki, Kikuo

2018-06-01

We developed a pinhole type gamma camera, using a compact detector module of a pixelated CdTe semiconductor, which has suitable sensitivity and quantitative accuracy for low dose rate fields. In order to improve the sensitivity of the pinhole type semiconductor gamma camera, we adopted three methods: a signal processing method to set the discriminating level lower, a high sensitivity pinhole collimator and a smoothing image filter that improves the efficiency of the source identification. We tested basic performances of the developed gamma camera and carefully examined effects of the three methods. From the sensitivity test, we found that the effective sensitivity was about 21 times higher than that of the gamma camera for high dose rate fields which we had previously developed. We confirmed that the gamma camera had sufficient sensitivity and high quantitative accuracy; for example, a weak hot spot (0.9 μSv/h) around a tree root could be detected within 45 min in a low dose rate field test, and errors of measured dose rates with point sources were less than 7% in a dose rate accuracy test.

Solid state semiconductor detectorized survey meter

International Nuclear Information System (INIS)

Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

1987-01-01

Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

Science.gov (United States)

Di Pietro, Riccardo; Sirringhaus, Henning

2012-07-03

We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Corrections to scaling in random resistor networks and diluted continuous spin models near the percolation threshold.

Science.gov (United States)

Janssen, Hans-Karl; Stenull, Olaf

2004-02-01

We investigate corrections to scaling induced by irrelevant operators in randomly diluted systems near the percolation threshold. The specific systems that we consider are the random resistor network and a class of continuous spin systems, such as the x-y model. We focus on a family of least irrelevant operators and determine the corrections to scaling that originate from this family. Our field theoretic analysis carefully takes into account that irrelevant operators mix under renormalization. It turns out that long standing results on corrections to scaling are respectively incorrect (random resistor networks) or incomplete (continuous spin systems).

Two dimensional tunable photonic crystals and n doped semiconductor materials

International Nuclear Information System (INIS)

Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

2015-01-01

In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

Science.gov (United States)

Yashin, A. A.

1985-04-01

A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

Semiconductor saturable absorbers for ultrafast THz signals

DEFF Research Database (Denmark)

Hoffmann, Matthias C.; Turchinovich, Dmitry

We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

Random-Resistor-Random-Temperature Kirchhoff-Law-Johnson-Noise (RRRT-KLJN Key Exchange

Directory of Open Access Journals (Sweden)

Kish Laszlo B.

2016-03-01

Full Text Available We introduce two new Kirchhoff-law-Johnson-noise (KLJN secure key distribution schemes which are generalizations of the original KLJN scheme. The first of these, the Random-Resistor (RR- KLJN scheme, uses random resistors with values chosen from a quasi-continuum set. It is well-known since the creation of the KLJN concept that such a system could work in cryptography, because Alice and Bob can calculate the unknown resistance value from measurements, but the RR-KLJN system has not been addressed in prior publications since it was considered impractical. The reason for discussing it now is the second scheme, the Random Resistor Random Temperature (RRRT- KLJN key exchange, inspired by a recent paper of Vadai, Mingesz and Gingl, wherein security was shown to be maintained at non-zero power flow. In the RRRT-KLJN secure key exchange scheme, both the resistances and their temperatures are continuum random variables. We prove that the security of the RRRT-KLJN scheme can prevail at a non-zero power flow, and thus the physical law guaranteeing security is not the Second Law of Thermodynamics but the Fluctuation-Dissipation Theorem. Alice and Bob know their own resistances and temperatures and can calculate the resistance and temperature values at the other end of the communication channel from measured voltage, current and power-flow data in the wire. However, Eve cannot determine these values because, for her, there are four unknown quantities while she can set up only three equations. The RRRT-KLJN scheme has several advantages and makes all former attacks on the KLJN scheme invalid or incomplete.

Modeling error and stability of endothelial cytoskeletal membrane parameters based on modeling transendothelial impedance as resistor and capacitor in series.

Science.gov (United States)

Bodmer, James E; English, Anthony; Brady, Megan; Blackwell, Ken; Haxhinasto, Kari; Fotedar, Sunaina; Borgman, Kurt; Bai, Er-Wei; Moy, Alan B

2005-09-01

Transendothelial impedance across an endothelial monolayer grown on a microelectrode has previously been modeled as a repeating pattern of disks in which the electrical circuit consists of a resistor and capacitor in series. Although this numerical model breaks down barrier function into measurements of cell-cell adhesion, cell-matrix adhesion, and membrane capacitance, such solution parameters can be inaccurate without understanding model stability and error. In this study, we have evaluated modeling stability and error by using a chi(2) evaluation and Levenberg-Marquardt nonlinear least-squares (LM-NLS) method of the real and/or imaginary data in which the experimental measurement is compared with the calculated measurement derived by the model. Modeling stability and error were dependent on current frequency and the type of experimental data modeled. Solution parameters of cell-matrix adhesion were most susceptible to modeling instability. Furthermore, the LM-NLS method displayed frequency-dependent instability of the solution parameters, regardless of whether the real or imaginary data were analyzed. However, the LM-NLS method identified stable and reproducible solution parameters between all types of experimental data when a defined frequency spectrum of the entire data set was selected on the basis of a criterion of minimizing error. The frequency bandwidth that produced stable solution parameters varied greatly among different data types. Thus a numerical model based on characterizing transendothelial impedance as a resistor and capacitor in series and as a repeating pattern of disks is not sufficient to characterize the entire frequency spectrum of experimental transendothelial impedance.

An evaluation of a translator for finite element data to resistor/capacitor data for the heat diffusion equation

International Nuclear Information System (INIS)

Manteufel, R.D.; Klein, D.E.; Yoshimura, H.R.

1988-01-01

This paper evaluates a translator for finite element data to resistor/capacitor data (FEM/RC) for the numerical solution of heat diffusion problems. The translator involves the derivation of thermal resistors and capacitors, implicit in the heat balance formulation of the finite difference method. It uses a finite element mesh, which consists of nodes and elements and is implicit in the Galerkin finite element method (GFEM). This hybrid translation method, FEM/RC, has been incorporated in Q/TRAN, a new thermal analysis computer code. This evaluation compares Q/TRAN, HEATING-6, and a research code employing GFEM on a purely mathematical, highly nonlinear steady-state conduction benchmark problem. The evaluation concludes that the FEM/RC technique has numerical characteristics that are consistent with comparable schemes for the benchmark problem. FEM/RC also accurately translates skewed meshes. Because FEM/RC generates resistors and capacitors, it appears to offer a more efficient method than the classical GFEM

Wake fields in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1994-05-01

It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

Science.gov (United States)

Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

2017-12-01

Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

Transparent Oxide Semiconductors for Emerging Electronics

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-11-01

Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

Logic delays of 5-μm resistor coupled Josephson logic

International Nuclear Information System (INIS)

Sone, J.; Yoshida, T.; Tahara, S.; Abe, H.

1982-01-01

Logic delays of resistor coupled Josephson logic (RCJL) have been investigated. An experimental circuit with a cascade chain of ten RCJL OR gates was fabricated using Pb-alloy Josephson IC technology with 5-μm minimum linewidth. Logic delay was measured to be as low as 10.8 ps with power dissipation of 11.7 μW. This demonstrates a switching operation faster than those reported for other Josephson gate designs. Comparison with computer-simulation results is also presented

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

Science.gov (United States)

Semeriyanov, F.; Saphiannikova, M.; Heinrich, G.

2009-11-01

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

International Nuclear Information System (INIS)

Semeriyanov, F; Saphiannikova, M; Heinrich, G

2009-01-01

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

A neutral grounding metallic resistor failure in a 35 kV network

Directory of Open Access Journals (Sweden)

Simić Ninoslav

2011-01-01

Full Text Available This paper presents the results of observations and measurements of the impedance of the metal resistor for grounding neutral of the 35 kV network, before and after damaging event. The proposed measures are to be taken in order to eliminate a failure in this particular case, as well as the prevention of similar events.

Metal-semiconductor interface in extreme temperature conditions

International Nuclear Information System (INIS)

Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

2008-01-01

We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

Asymptotic expansion for the resistance between two maximally separated nodes on an M by N resistor network.

Science.gov (United States)

Izmailian, N Sh; Huang, Ming-Chang

2010-07-01

We analyze the exact formulas for the resistance between two arbitrary notes in a rectangular network of resistors under free, periodic and cylindrical boundary conditions obtained by Wu [J. Phys. A 37, 6653 (2004)]. Based on such expression, we then apply the algorithm of Ivashkevich, Izmailian, and Hu [J. Phys. A 35, 5543 (2002)] to derive the exact asymptotic expansions of the resistance between two maximally separated nodes on an M×N rectangular network of resistors with resistors r and s in the two spatial directions. Our results is 1/s (R(M×N))(r,s) = c(ρ)ln S + c(0)(ρ,ξ) + ∑(p=1)(∞) (c(2p)(ρ,ξ))/S(p) with S = MN, ρ = r/s and ξ = M/N. The all coefficients in this expansion are expressed through analytical functions. We have introduced the effective aspect ratio ξeff = square root(ρ)ξ for free and periodic boundary conditions and ξeff = square root(ρ)ξ/2 for cylindrical boundary condition and show that all finite-size correction terms are invariant under transformation ξeff→1/ξeff.

An optimized resistor pattern for temperature gradient control in microfluidics

Science.gov (United States)

Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

2009-06-01

In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117-23, Erickson et al 2003 Lab Chip 3 141-9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors.

An optimized resistor pattern for temperature gradient control in microfluidics

International Nuclear Information System (INIS)

Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

2009-01-01

In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117–23, Erickson et al 2003 Lab Chip 3 141–9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Method for depositing high-quality microcrystalline semiconductor materials

Science.gov (United States)

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Life-cycle assessment of semiconductors

CERN Document Server

Boyd, Sarah B

2012-01-01

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Doping of organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2013-01-15

The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Doping of organic semiconductors

International Nuclear Information System (INIS)

Luessem, B.; Riede, M.; Leo, K.

2013-01-01

The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A new method of removing the high value feedback resistor in the charge sensitive preamplifier

International Nuclear Information System (INIS)

Xi Deming

1993-01-01

A new method of removing the high value feedback resistor in the charge sensitive preamplifier is introduced. The circuit analysis of this novel design is described and the measured performances of a practical circuit are provided

Absolute instability of polaron mode in semiconductor magnetoplasma

Science.gov (United States)

Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

2018-01-01

Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

Science.gov (United States)

Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

2009-12-09

We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

DEFF Research Database (Denmark)

Berg, Tommy Winther

2004-01-01

This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

Directory of Open Access Journals (Sweden)

Chyan-Chyi Wu

2009-02-01

Full Text Available This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 mm complementary metal oxide semiconductor (CMOS process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature

4-bit digital to analog converter using R-2R ladder and binary weighted resistors

Science.gov (United States)

Diosanto, J.; Batac, M. L.; Pereda, K. J.; Caldo, R.

2017-06-01

The use of a 4-bit digital-to-analog converter using two methods; Binary Weighted Resistors and R-2R Ladder is designed and presented in this paper. The main components that were used in constructing both circuits were different resistor values, operational amplifier (LM741) and single pole double throw switches. Both circuits were designed using MULTISIM software to be able to test the circuit for its ideal application and FRITZING software for the layout designing and fabrication to the printed circuit board. The implementation of both systems in an actual circuit benefits in determining and comparing the advantages and disadvantages of each. It was realized that the binary weighted circuit is more efficient DAC, having lower percentage error of 0.267% compared to R-2R ladder circuit which has a minimum of percentage error of 4.16%.

Sizing of the Series Dynamic Breaking Resistor in a Doubly Fed Induction Generator Wind Turbine

DEFF Research Database (Denmark)

Soliman, Hammam; Wang, Huai; Zhou, Dao

2014-01-01

This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter and the maxi......This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter...... and the maximum allowable voltage of the stator. Then the impact of the SDBR value on the rotor current, stator voltage, DC-link voltage, reactive power capability and introduced power loss during voltage sag operation is evaluated by simulation. The presented study enables a trade-off sizing of the SDBR among...

Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

Science.gov (United States)

Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

2013-03-07

In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

Implantable bladder volume sensor based on resistor ladder network composed of conductive hydrogel composite.

Science.gov (United States)

Mi Kyung Kim; Hyojung Kim; Jung, Yeon Su; Adem, Kenana M A; Bawazir, Sarah S; Stefanini, Cesare; Lee, Hyunjoo J

2017-07-01

An accurate bladder volume monitoring system is a critical component in diagnosis and treatment of urological disorders. Here, we report an implantable bladder volume sensor with a multi-level resistor ladder which estimates the bladder volume through discrete resistance values. Discretization allows the sensor output to be resilient to the long-term drift, hysteresis, and degradation of the sensor materials. Our sensor is composed of biocompatible polypyrrole/agarose hydrogel composite. Because Young's modulus of this composite is comparable to that of the bladder wall, the effect of mechanical loading of the sensor on the bladder movement is minimized which allows more accurate volume monitoring. We also demonstrate the patterning and molding capability of this material by fabrication various structures. Lastly, we successfully demonstrate the functionality of the multi-level resistor ladder sensor as a bladder volume sensor by attaching the sensor on the pig's bladder and observing the impedance change of the sensor.

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Suppression of Adverse Effects of GIC Using Controlled Variable Grounding Resistor

Science.gov (United States)

Abuhussein, A.; Ali, M. H.

2016-12-01

Geomagnetically induced current (GIC) has a harmful impact on power systems, with a large footprint. Mitigation strategies for the GIC are required to protect the integrity of the power system. To date, the adverse effects of GIC are being mitigated by either operational procedures or grounding fixed capacitors (GFCs). The operational procedures are uncertain, reduce systems' reliability, and increase energy losses. On the other hand, GFCs, incur voltage spikes, increase the transformer cost substantially, and require protection circuitry. This study investigates new possible approaches to cope with GIC, by using a controlled variable grounding resistor (CVGR), without interfering with the system's normal operation. In addition, the new techniques help suppress unsymmetrical faults in the power network. The controllability of the grounding resistor is applied using three different techniques: (1) a Parallel switch that is controlled by PI regulated duty cycle, (2) a Parallel switch that is triggered by a preset values in a look-up-table (LUT), and (3) a Mechanical resistor varied by a Fuzzy logic controller (FLC). The experimental results were obtained and validated using the MATLAB/SIMULINK software. A hypothetical power system that consists of a generator, a 765kv, 500 km long transmission lines connecting between a step-up, Δ-Yn, transformer, and a step-down, Yn-Δ, transformer, is considered. The performance of the CVGR is compared with that of the GFC under the cases of GIC event and unsymmetrical faults. From the simulation results, the following points are concluded: The CVGR effectively suppresses the GIC flowing in the system. Consequently, it protects the transformers from saturation and the rest of the system from collapsing. The CVGR also reduces the voltage and power swings associated with unsymmetrical faults and blocks the zero sequence current flowing through the neutral of the transformer. The performance of the CVGR surpasses that of the GFC in

Donors in Semiconductors - are they Understood in Electronic Era?

International Nuclear Information System (INIS)

Dmochowski, Janusz E

2007-01-01

The physics of semiconductors and contemporary electronics cannot be understood without impurities. The hydrogen-like shallow donor (and acceptor) state of electron (hole) bound by Coulomb electrostatic force of excess charge of impurity is used to control conductivity of semiconductors and construct semiconductor diodes, transistors and numerous types of semiconductor electronic and optoelectronic devices, including lasers. Recently, surprisingly, the physics of impurity donors appeared to be much reacher. Experimental evidence has been provided for universal existence of other types of electronic states of the same donor impurity: i) mysterious, deep, DX-type state resulting in metastability - slow hysteresis phenomena - understood as two-electron, acceptor-like state of donor impurity, formed upon large lattice distortion or rearrangement around impurity and accompanying capture of second electron, resulting in negative electron correlation energy U; ii) deep, localized, fully symmetric, A1, one-electron donor state of substitutional impurity. The latter state can be formed from the 'ordinary' shallow hydrogen-like state in the process of strong localization of electron by short range, local potential of impurity core, preserving full (A 1 ) symmetry of the substitutional impurity in the host lattice. The 'anticrossing' of the two A 1 (shallow hydrogenic and deep localized) energy levels upon transformation is observed. All types of electronic states of impurity can be universally observed for the same donor impurity and mutual transformation between different states occur upon changing experimental conditions. The knowledge about existence and properties of these n ew , molecular type, donor states in semiconductors seems still await general recognition and positive application in contemporary material and device science and engineering

30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

Science.gov (United States)

2010-07-01

... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

Thienoacene-based organic semiconductors.

Science.gov (United States)

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Detection of radioactivity by semiconductors

International Nuclear Information System (INIS)

Anon.

1991-01-01

The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

Two types of photomultiplier voltage dividers for high and changing count rates

International Nuclear Information System (INIS)

Reiter, W.L.; Stengl, G.

1980-01-01

We report on the design of two types of voltage distribution circuits for high stability photomultiplier operation. 'Type A' voltage divider is an ohmic voltage divider with high bleeder current (up to 10 mA) and the resistor chain split at one of the last dynodes, usually the dynode where the analog signal is derived from. This simple constructive measure improves the stability of the dynode voltage by a factor of 5 compared with an unsplit conventional resistor chain. 'Type B' is a novel active voltage divider using cold cathode tubes ar regulating elements. This voltage divider exhibits excellent temperature stability (about 10 -4 / 0 C). With 'type B' an equal stability compared with conventional ohmic dividers can be achieved at a bleeder current smaller by one order of magnitude. Of course both concepts, 'type A' and 'type B', can be combined. (orig.)

Effects of varying laser trimming geometries on thin film\\ud resistors

OpenAIRE

Alafogianni, Maria; Birkett, Martin; Penlington, Roger

2017-01-01

Purpose - This paper studies the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value.\\ud \\ud Design/methodology/approach - The benefits and limitations of basic trim patterns are taken into consideration and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns h...

Efficient color-tunable multiexcitonic dual wavelength emission from Type II semiconductor tetrapods.

Science.gov (United States)

Wu, Wen-Ya; Li, Mingjie; Lian, Jie; Wu, Xiangyang; Yeow, Edwin K L; Jhon, Mark H; Chan, Yinthai

2014-09-23

We synthesized colloidal InP/ZnS seeded CdS tetrapods by harnessing the structural stability of the InP/ZnS seed nanocrystals at the high reaction temperatures needed to grow the CdS arms. Because of an unexpected Type II band alignment at the interface of the InP/ZnS core and CdS arms that enhanced the occurrence of radiative excitonic recombination in CdS, these tetrapods were found to be capable of exhibiting highly efficient multiexcitonic dual wavelength emission of equal intensity at spectrally distinct wavelengths of ∼485 and ∼675 nm. Additionally, the Type II InP/ZnS seeded CdS tetrapods displayed a wider range of pump-dependent emission color-tunability (from red to white to blue) within the context of a CIE 1931 chromaticity diagram and possessed higher photostability due to suppressed multiexcitonic Auger recombination when compared to conventional Type I CdSe seeded CdS tetrapods. By employing time-resolved spectroscopy measurements, we were able to attribute the wide emission color-tunability to the large valence band offset between InP and CdS. This work highlights the importance of band alignment in the synthetic design of semiconductor nanoheterostructures, which can exhibit color-tunable multiwavelength emission with high efficiency and photostability.

A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

KAUST Repository

Bianchi Granato, Danilo

2012-05-01

In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

Imaging the motion of electrons across semiconductor heterojunctions

Science.gov (United States)

Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

The Transition from Traditional to Whole Language Instruction: A Continuum from Reformers to Resistors.

Science.gov (United States)

Schweiker, Karyn E.; Barksdale-Ladd, Mary Alice

Factors that influenced teachers to become reformers, reviewers, or resistors to whole language were investigated with specific examination of school culture. In this study three transitioning school sites were selected on the basis of their similarity in staffing and student size. Participants from each school involved three to four classroom…

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

Science.gov (United States)

Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

Resistance and resistance fluctuations in random resistor networks under biased percolation.

Science.gov (United States)

Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

2002-06-01

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

A non-destructive crossbar architecture of multi-level memory-based resistor

Science.gov (United States)

Sahebkarkhorasani, Seyedmorteza

Nowadays, researchers are trying to shrink the memory cell in order to increase the capacity of the memory system and reduce the hardware costs. In recent years, there has been a revolution in electronics by using fundamentals of physics to build a new memory for computer application in order to increase the capacity and decrease the power consumption. Increasing the capacity of the memory causes a growth in the chip area. From 1971 to 2012 semiconductor manufacturing process improved from 6mum to 22 mum. In May 2008, S.Williams stated that "it is time to stop shrinking". In his paper, he declared that the process of shrinking memory element has recently become very slow and it is time to use another alternative in order to create memory elements [9]. In this project, we present a new design of a memory array using the new element named Memristor [3]. Memristor is a two-terminal passive electrical element that relates the charge and magnetic flux to each other. The device remained unknown since 1971 when it was discovered by Chua and introduced as the fourth fundamental passive element like capacitor, inductor and resistor [3]. Memristor has a dynamic resistance and it can retain its previous value even after disconnecting the power supply. Due to this interesting behavior of the Memristor, it can be a good replacement for all of the Non-Volatile Memories (NVMs) in the near future. Combination of this newly introduced element with the nanowire crossbar architecture would be a great structure which is called Crossbar Memristor. Some frameworks have recently been introduced in literature that utilized Memristor crossbar array, but there are many challenges to implement the Memristor crossbar array due to fabrication and device limitations. In this work, we proposed a simple design of Memristor crossbar array architecture which uses input feedback in order to preserve its data after each read operation.

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

Electrical properties of thick-layer piezo resistors based on Bi2Ru2O7

International Nuclear Information System (INIS)

Golonka, L.; Tankiewicz, S.

1997-01-01

Piezoelectric effect and electrical properties of thick-layer resistors based on Bi 2 Ru 2 O 7 (on ceramic substrate) have been studied. The influence of selected technological parameters (sintering temperature, chemical composition, heat treatment) on system properties has been estimated. 4 refs, 7 figs

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Ion implantation methods for semiconductor substrates

International Nuclear Information System (INIS)

Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

1980-01-01

A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

Energy Technology Data Exchange (ETDEWEB)

Liu, J. W., E-mail: liu.jiangwei@nims.go.jp [International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Watanabe, E.; Oosato, H. [Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Koide, Y., E-mail: koide.yasuo@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-08-25

A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

Energy Technology Data Exchange (ETDEWEB)

Semeriyanov, F; Saphiannikova, M; Heinrich, G [Leibniz Institute of Polymer Research Dresden, Hohe str. 6, 01069 Dresden (Germany)], E-mail: fsemeriyanov@yahoo.de

2009-11-20

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

2,6-Bis(benzo[b]thiophen-2-yl-3,7-dipentadecyltetrathienoacene (DBT-TTAR2 as an Alternative of Highly Soluble p-type Organic Semiconductor for Organic Thin Film Transistor (OTFT Application

Directory of Open Access Journals (Sweden)

Mery B. Supriadi

2013-03-01

Full Text Available A new compound of organic semiconductor based on tetrathienoacene (TTA derivatives, DBT-TTAR2 was synthesized and characterized. The corporation of dibenzo[b,d]thiophene (DBT group and alkyl substituent in both ends of TTA core have a significant effect on their π-π molecular conjugation length, energy gaps value and solubility properties. DBT-TTAR2 is fabricated as p-type organic semiconductor of organic thin film transistor (OTFT by solution process at Industrial Technology Research Institute, Taiwan. A good optical, electrochemical, and thermal properties of DBT-TTAR2 showed that its exhibits a better performance as highly soluble p-type organic semiconductor.

Ultrathin microwave metamaterial absorber utilizing embedded resistors

Science.gov (United States)

Kim, Young Ju; Hwang, Ji Sub; Yoo, Young Joon; Khuyen, Bui Xuan; Rhee, Joo Yull; Chen, Xianfeng; Lee, YoungPak

2017-10-01

We numerically and experimentally studied an ultrathin and broadband perfect absorber by enhancing the bandwidth with embedded resistors into the metamaterial structure, which is easy to fabricate in order to lower the Q-factor and by using multiple resonances with the patches of different sizes. We analyze the absorption mechanism in terms of the impedance matching with the free space and through the distribution of surface current at each resonance frequency. The magnetic field, induced by the antiparallel surface currents, is formed strongly in the direction opposite to the incident electromagnetic wave, to cancel the incident wave, leading to the perfect absorption. The corresponding experimental absorption was found to be higher than 97% in 0.88-3.15 GHz. The agreement between measurement and simulation was good. The aspects of our proposed structure can be applied to future electronic devices, for example, advanced noise-suppression sheets in the microwave regime.

Development of high voltage surge limiting resistor for protection of HV multiplier of 3 MeV DC accelerator

International Nuclear Information System (INIS)

Dewangan, S.; Sharma, D.K.; Bakhtsingh, R.I.

2013-01-01

A 3MeV, 10mA DC electron beam accelerator is in commissioning stages at EBC, Kharghar, Navi Mumbai. The accelerating potential of -3MV is generated by a Parallel Coupled Voltage Multiplier (PCVM) scheme using 74 stages of HV rectifier stacks in the 6 kg/cm 2 SF6 gas environment. The HV surges of order of 600kV, 42kA, 10ns is estimated across the rectifier stacks during sparking in the multiplier column. To limit the surge current and protect the rectifier diodes, a non inductive thick film surge limiting resistor (SLR) and protective spark gap is designed and developed. The rectifier stacks with surge limiting resistors at both the ends and protective spark gap in parallel has been successfully tested in simulated surge condition at an impulse voltage of 212kVp, 150ns FWHM and surge energy of 200J, 10ms, 20kV at 6kg/cm 2 SF6 gas environment and found satisfactorily. Subsequently the HV multiplier was installed with this surge protection scheme and is being tested at 1.2 MeV level. This paper describes the design features and test results of the non-inductive surge limiting resistor. (author)

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

Current flow in random resistor networks: the role of percolation in weak and strong disorder.

Science.gov (United States)

Wu, Zhenhua; López, Eduardo; Buldyrev, Sergey V; Braunstein, Lidia A; Havlin, Shlomo; Stanley, H Eugene

2005-04-01

We study the current flow paths between two edges in a random resistor network on a L X L square lattice. Each resistor has resistance e(ax) , where x is a uniformly distributed random variable and a controls the broadness of the distribution. We find that: (a) The scaled variable u identical with u congruent to L/a(nu) , where nu is the percolation connectedness exponent, fully determines the distribution of the current path length l for all values of u . For u > 1, the behavior corresponds to the weak disorder limit and l scales as l approximately L, while for u < 1 , the behavior corresponds to the strong disorder limit with l approximately L(d(opt) ), where d(opt) =1.22+/-0.01 is the optimal path exponent. (b) In the weak disorder regime, there is a length scale xi approximately a(nu), below which strong disorder and critical percolation characterize the current path.

Functional characteristics of a new electrolarynx "Evada" having a force sensing resistor sensor.

Science.gov (United States)

Choi, H S; Park, Y J; Lee, S M; Kim, K M

2001-12-01

Electrolarynxes have been used as one of the rehabilitation methods for laryngectomees. Earlier electrolarynxes could not alter frequency and intensity simultaneously during conversation. Recently, we developed an electrolarynx named "Evada" (prototype so far) using a force sensing resistor (FSR) sensor that can control both frequency and intensity simultaneously during conversation. Employing three types of electrolarynxes (Evada, Servox-inton, Nu-vois), this study was undertaken to examine the functional characteristics of Evada for the normal control group and for laryngectomess. Five laryngectomees and five normal adults were asked to express three sentences (declarative sentence, "You stay here.", interrogative sentence, "You stay here?", and imperative sentence, "You! Stay here.") using three types of electrolarynxes. Frequency and intensity changes between the first and last vowels in the three sentences were calculated and analyzed statistically by paired t test. The frequency changes in the interrogative and imperative sentences were more prominent in Evada than in Servox-inton and Nu-vois. The intensity changes in the interrogative and imperative sentences were also more prominent in Evada than in Servox-inton and Nu-vois. Evada controls frequency and/or intensity by having the subject press the control button(s). Therefore, Evada appears to be better at producing intonation and contrastive stress than Nu-vois and Servox-inton.

Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

DEFF Research Database (Denmark)

Hoffmann, Matthias C.; Turchinovich, Dmitry

2011-01-01

THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

"Weak quantum chaos" and its resistor network modeling.

Science.gov (United States)

Stotland, Alexander; Pecora, Louis M; Cohen, Doron

2011-06-01

Weakly chaotic or weakly interacting systems have a wide regime where the common random matrix theory modeling does not apply. As an example we consider cold atoms in a nearly integrable optical billiard with a displaceable wall (piston). The motion is completely chaotic but with a small Lyapunov exponent. The Hamiltonian matrix does not look like one taken from a Gaussian ensemble, but rather it is very sparse and textured. This can be characterized by parameters s and g which reflect the percentage of large elements and their connectivity, respectively. For g we use a resistor network calculation that has a direct relation to the semilinear response characteristics of the system, hence leading to a prediction regarding the energy absorption rate of cold atoms in optical billiards with vibrating walls.

Improvement in the voltage grading (axial and radial) of the generator column of a Van de Graaf generator by the use of a resistor chain

International Nuclear Information System (INIS)

Prabhakar, B.R.

1977-01-01

It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work. (Auth.)

Electron-phonon coupling effect on wakefields in piezoelectric semiconductors

International Nuclear Information System (INIS)

Salimullah, M; Shukla, P K; Ghosh, S K; Nitta, H; Hayashi, Y

2003-01-01

Using an appropriate dielectric constant for an n-type piezoelectric semiconductor plasma and a moving test particle approach, it is shown that, besides the usual screened potential, there exists a non-Coulombian oscillatory potential or a wakefield behind a moving charged particle due to a strong resonant interaction between the charged particle and the electro-acoustic mode of the host semiconductor. With the concept of the wakefield, a possible lattice formation of colloids resulting from ion implantation in a current-carrying piezoelectric semiconductor has been examined

Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance

International Nuclear Information System (INIS)

Wang, X.Y.; Zhang, Z.S.; Bai, T.

2010-01-01

The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al) were introduced to the Cr-Si target to improve the performance of the target prepared. The measures for grain refining in smelting Cr-Si-Ta-Al target were taken to improve the performance of the prepared target. The mechanism and role of grain refinement were discussed in the paper. The phase structure of the prepared target was detected by X-ray diffraction (XRD). Rate of temperature drop was studied to reduce the internal stress of alloy target and conquer the easy cracking disadvantage of silicon-rich target. The electrical properties of sputtered thin film resistors were tested to evaluate the performance of the prepared target indirectly.

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

Science.gov (United States)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

Update for nurse anesthetists. The Starling resistor: a model for explaining and treating obstructive sleep apnea.

Science.gov (United States)

Stalford, Catherine B

2004-04-01

Recent epidemiological research places the incidence of obstructive sleep apnea as high as 16% in the general population. Serious postoperative respiratory complications and death have been reported in this population. Anesthetic drugs contribute to these complications secondary to acute and residual influences on the complex orchestration of airway muscles and reflexes involved in airway patency. The Starling resistor model is a theoretical model that has application in explaining upper airway dynamics and the treatment and management of obstructive sleep apnea. The model postulates the oropharynx as a collapsible tube. The oropharynx remains open or partially or completely closed as a result of pressure upstream at the nose and mouth, pressure downstream at the trachea and below, or tissue pressure surrounding the oropharynx. This AANA Journal course provides an overview of the Starling resistor model, its application to obstructive sleep apnea, and preoperative and postoperative anesthetic considerations.

Testing of defects in Si semiconductor apparatus by using single-photon detection

International Nuclear Information System (INIS)

Zhongliang, Pan; Ling, Chen; Guangju, Chen

2013-01-01

The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

International Nuclear Information System (INIS)

Krivoruchko, V.N.

1996-01-01

The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

Controlling Molecular Doping in Organic Semiconductors.

Science.gov (United States)

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation of n-type semiconductor SnO2 thin films

International Nuclear Information System (INIS)

Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

2013-01-01

We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

Semiconductor properties and protective role of passive films of iron base alloys

International Nuclear Information System (INIS)

Fujimoto, Shinji; Tsuchiya, Hiroaki

2007-01-01

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H 2 SO 4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, the passive film of the Fe-18Cr alloy in the sulphuric acid consists of p-type oxide and n-type hydroxide layers. The behaviour of passive film growth and corrosion was discussed in terms of the electronic structure in the passive film

Selection of efficient etchants for nondestructive treatment of semiconductors

International Nuclear Information System (INIS)

Tomashik, V.N.; Fomin, A.V.; Tomashik, Z.F.

1996-01-01

The scheme for studying etching processes of semiconductor materials and developing new etchants for different semiconductors is proposed. The scheme includes the experiment mathematical planning, computerized physicochemical modeling, kinetic studies, investigation of surface layers, formed by etching. Such on approach makes it possible to optimize the etchant composition in every concrete cage. The scheme is tested in the course of developing optimal methodologies of preepitaxial treatment and selection of etchants composition for semiconductor compounds of the A 1 B 6 and A 3 B 5 type. 13 refs., 4 figs

The role of feedback resistors and tid effects in the ASET response of a high speed current feedback amplifier

International Nuclear Information System (INIS)

Roig, F.; Dusseau, L.; Privat, A.; Vaille, J.R.; Boch, J.; Saigne, F.; Ribeiro, P.; Auriel, G.; Roche, N.J.H.; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, B.

2014-01-01

The influence of external circuit designs on ASET shapes in a high speed current feedback amplifier (CFA) (AD844) is investigated by means of the pulsed laser single event effect (PLSEE) simulation technique. Changes of the feedback resistors modify circuit's electrical parameters such as closed-loop gain and bandwidth, affecting amplifier stability and so ASET shapes. Qualitative explanations based on general electronic rules and feedback theories enable the understanding of a CFA operation establishing a correlation between the evolution of external feedback resistor values and ASET parameters. TID effects on the ASET sensitivity in AD844 CFA are also investigated in this work highlighting different behaviors according to the impacted bipolar transistor in the integrated circuit. (authors)

Array of Chemosensitive Resistors with Composites of Gas Chromatography (GC) Materials and Carbon Black for Detection and Recognition of VOCs: A Basic Study

Science.gov (United States)

Wyszynski, Bartosz; Yatabe, Rui; Nakao, Atsuo; Nakatani, Masaya; Oki, Akio; Oka, Hiroaki; Toko, Kiyoshi

2017-01-01

Mimicking the biological olfaction, large odor-sensor arrays can be used to acquire a broad range of chemical information, with a potentially high degree of redundancy, to allow for enhanced control over the sensitivity and selectivity of artificial olfaction systems. The arrays should consist of the largest possible number of individual sensing elements while being miniaturized. Chemosensitive resistors are one of the sensing platforms that have a potential to satisfy these two conditions. In this work we test viability of fabricating a 16-element chemosensitive resistor array for detection and recognition of volatile organic compounds (VOCs). The sensors were fabricated using blends of carbon black and gas chromatography (GC) stationary-phase materials preselected based on their sorption properties. Blends of the selected GC materials with carbon black particles were subsequently coated over chemosensitive resistor devices and the resulting sensors/arrays evaluated in exposure experiments against vapors of pyrrole, benzenal, nonanal, and 2-phenethylamine at 150, 300, 450, and 900 ppb. Responses of the fabricated 16-element array were stable and differed for each individual odorant sample, proving the blends of GC materials with carbon black particles can be effectively used for fabrication of large odor-sensing arrays based on chemosensitive resistors. The obtained results suggest that the proposed sensing devices could be effective in discriminating odor/vapor samples at the sub-ppm level. PMID:28696353

Temperature-independent resistor for microelectronic circuits

Science.gov (United States)

Aegerter, S.; Libby, W. F.

1970-01-01

Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.

Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

Energy Technology Data Exchange (ETDEWEB)

Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A. [London Centre for Nanotechnology, UCL, 17–19 Gordon Street, London WC1H 0AH (United Kingdom)

2014-12-14

We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Fabrication and application of amorphous semiconductor devices

International Nuclear Information System (INIS)

Kumurdjian, Pierre.

1976-01-01

This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

DEFF Research Database (Denmark)

Meyer-Holdt, Jakob

Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Calculation of the internal electric field within doped semiconductors

International Nuclear Information System (INIS)

Phelps, G J

2012-01-01

A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

Submillimetre wave spectroscopy of semiconductors in high magnetic fields

International Nuclear Information System (INIS)

Maan, J.C.

1979-01-01

Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

Development of resistor assemblies at 14 UD pelletron accelerator facility BARC-TIFR, Mumbai

International Nuclear Information System (INIS)

Ramlal; Ekambaram, M.; Matkar, U.V.; Lokare, R.N.; Gore, J.A.; Tambwekar, V.V.; Kulkarni, S.G.; Gupta, A.K.; Bhagwat, P.V.; Kailas, S.; Karande, J.N.; Kurup, M.B.

2002-01-01

An important consideration in high voltage design of an electrostatic accelerator is the potential grading system used to divide the terminal potential equitably (or as required) across the column or tube electrode gaps. This is generally accomplished by tapping the electrode potentials from across a resistor-chain or from a series of corona gaps as in the Pelletron Accelerator. However, each potential grading system has its own set of advantages and disadvantages

Semiconductor saturable absorbers for ultrafast terahertz signals

DEFF Research Database (Denmark)

Hoffmann, Matthias C.; Turchinovich, Dmitry

2010-01-01

states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse......We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

Hyperentangled photon sources in semiconductor waveguides

DEFF Research Database (Denmark)

Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

2014-01-01

We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

Carbon resistor pressure gauge calibration at low stresses

International Nuclear Information System (INIS)

Cunningham, Bruce; Vandersall, Kevin S.; Niles, Angela M.; Greenwood, Daniel W.; Garcia, Frank; Forbes, Jerry W.; Wilson, William H.

2002-01-01

The 470 Ohm carbon resistor gauge has been used in the stress range up to 4-5 GPa for highly heterogeneous materials and/or divergent flow experiments. The attractiveness of the gauge is its rugged nature, simple construction, low cost, reproducibility, and survivability in dynamic events. Gauge drawbacks are the long time response to pressure equilibration and gauge resistance hysteresis. In the regime below 0.4 GPa, gauge calibration has been extrapolated. Because of the need for calibration data within this low stress regime, calibration experiments were performed using a split-Hopkinson bar, drop tower apparatus, and gas pressure chamber. Since the performance of the gauge at elevated temperatures is a concern, the change in resistance due to heating at atmospheric pressure was also investigated. Details of the various calibration arrangements and the results are discussed and compared to a calibration curve fit to previously published calibration data

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

2006-02-28

The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

A novel charge sensitive preamplifier without the feedback resistor

International Nuclear Information System (INIS)

Bertuccio, G.

1992-01-01

A novel charge sensitive preamplifier which has no resistor in parallel with the feedback capacitor is presented. No external device or circuit is required to discharge the feedback capacitor. The detector leakage and signal current flows away through the gate of the first JFET which works with its gate to source junction slightly forward biased. The DC stabilization of the preamplifier is accomplished by an additional feedback loop, which permits to equalize the current flowing through the forward baised gate to source junction and the current coming from the detector. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using an input JFET with a transconductance to gate capacitance ratio of 4 mS/5.4 pF

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

Science.gov (United States)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Adiposity Impacts Intrarenal Hemodynamic Function in Adults With Long-standing Type 1 Diabetes With and Without Diabetic Nephropathy: Results From the Canadian Study of Longevity in Type 1 Diabetes.

Science.gov (United States)

Bjornstad, Petter; Lovshin, Julie A; Lytvyn, Yuliya; Boulet, Genevieve; Lovblom, Leif E; Alhuzaim, Omar N; Farooqi, Mohammed A; Lai, Vesta; Tse, Josephine; Cham, Leslie; Orszag, Andrej; Scarr, Daniel; Weisman, Alanna; Keenan, Hillary A; Brent, Michael H; Paul, Narinder; Bril, Vera; Perkins, Bruce A; Cherney, David Z I

2018-04-01

Central adiposity is considered to be an important cardiorenal risk factor in the general population and in type 1 diabetes. We sought to determine the relationship between central adiposity and intrarenal hemodynamic function in adults with long-standing type 1 diabetes with and without diabetic nephropathy (DN). Patients with type 1 diabetes ( n = 66, duration ≥50 years) and age-/sex-matched control subjects ( n = 73) were studied. The cohort was stratified into 44 DN Resistors (estimated glomerular filtration rate [eGFR] >60 mL/min/1.73 m 2 and inulin [GFR INULIN ], effective renal plasma flow for p -aminohippuric acid [ERPF PAH ]) was measured. Afferent arteriolar resistance, efferent arteriolar resistance, renal blood flow, renal vascular resistance [RVR], filtration fraction, and glomerular pressure were derived from the Gomez equations. Fat and lean mass were quantified by DXA. Whereas measures of adiposity did not associate with GFR INULIN or ERPF PAH in healthy control subjects, trunk fat mass inversely correlated with GFR INULIN ( r = -0.46, P INULIN values in DN and DN Resistors, but the relationships between central adiposity and ERPF PAH and RVR were attenuated and/or reversed in patients with DN compared with DN Resistors. The adiposity-intrarenal hemodynamic function relationship may be modified by the presence of type 1 diabetes and DN, requiring further study of the mechanisms by which adiposity influences renal hemodynamic function. © 2018 by the American Diabetes Association.

Use of a Pre-Insertion Resistor to Minimize Zero-Missing Phenomenon and Switching Overvoltages

DEFF Research Database (Denmark)

Bak, Claus Leth; da Silva, Filipe Miguel Faria; Gudmundsdottir, Unnur Stella

2009-01-01

With the increasing use of High-Voltage Cables, which have different electric characteristics from Overhead Lines, phenomenon like current zero-missing start to appear more often on the transmission systems. Methods to prevent zero-missing phenomenon are still being studied and compared to see wh...... an optimal value of the resistance of the pre-insertion resistor that results in minimizing both the zero-missing phenomenon and switching overvoltages simultaneously....

Semiconductor devices for all-optical regeneration

DEFF Research Database (Denmark)

Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

2003-01-01

We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

Science.gov (United States)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

The classical Starling resistor model often does not predict inspiratory airflow patterns in the human upper airway.

Science.gov (United States)

Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Butler, James P; Eckert, Danny J; White, David P; Malhotra, Atul; Wellman, Andrew

2014-04-15

The upper airway is often modeled as a classical Starling resistor, featuring a constant inspiratory airflow, or plateau, over a range of downstream pressures. However, airflow tracings from clinical sleep studies often show an initial peak before the plateau. To conform to the Starling model, the initial peak must be of small magnitude or dismissed as a transient. We developed a method to simulate fast or slow inspirations through the human upper airway, to test the hypothesis that this initial peak is a transient. Eight subjects [4 obstructive sleep apnea (OSA), 4 controls] slept in an "iron lung" and wore a nasal mask connected to a continuous/bilevel positive airway pressure machine. Downstream pressure was measured using an epiglottic catheter. During non-rapid eye movement (NREM) sleep, subjects were hyperventilated to produce a central apnea, then extrathoracic pressure was decreased slowly (∼2-4 s) or abruptly (resistor model, the upper airway exhibits marked NED in some subjects.

High voltage semiconductor devices and methods of making the devices

Energy Technology Data Exchange (ETDEWEB)

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

2018-01-23

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Energy Technology Data Exchange (ETDEWEB)

Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

Zinc Alloys for the Fabrication of Semiconductor Devices

Science.gov (United States)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

Semiconductor electrolyte photovoltaic energy converter

Science.gov (United States)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

High-performance n-type organic semiconductors: incorporating specific electron-withdrawing motifs to achieve tight molecular stacking and optimized energy levels.

Science.gov (United States)

Yun, Sun Woo; Kim, Jong H; Shin, Seunghoon; Yang, Hoichang; An, Byeong-Kwan; Yang, Lin; Park, Soo Young

2012-02-14

Novel π–conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic field-effect transistor (OFET) properties with electron mobilities as high as 2.14 cm2 V−1s−1 and on-off current ratios Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Numerical methods for semiconductor heterostructures with band nonparabolicity

International Nuclear Information System (INIS)

Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

2003-01-01

This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

Room-temperature antiferromagnetic memory resistor.

Science.gov (United States)

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Imaging the motion of electrons in 2D semiconductor heterostructures

Science.gov (United States)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Defect identification in semiconductors with positron annihilation: experiment and theory

Science.gov (United States)

Tuomisto, Filip

2015-03-01

Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

A novel water resistor divider with a coaxial low-voltage arm.

Science.gov (United States)

Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

2010-03-01

A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Study on transient stability of asynchronous wind turbine based on series dynamic braking resistor%基于串联动态制动电阻的异步风电机组暂态稳定性研究

Institute of Scientific and Technical Information of China (English)

肖兰; 赵斌; 李建; 范镇南

2011-01-01

以并网笼型异步风电机组为例,分析了利用串联动态制动电阻提高并网异步风电机组在电网故障下暂态稳定性的作用机理以及效果.建立了并网异步风电机组的数学模型,基于Matlab/Simulink仿真平台,对比分析了采用串联动态制动电阻、并联动态制动电阻以及无功补偿装置的作用效果.仿真结果表明,采用串联动态制动电阻可以有效改善并网异步风力发电机组的暂态稳定性；同时,采用串联动态制动电阻和无功补偿装置,可显著提高机组的暂态稳定性,减少对无功补偿的需求,降低风电场的运行成本.%Take the squirrel-cage type asynchronous wind turbine as example, the mechanism and efficiency of the improvement on the transient stability of wind turbine with grid-connected used by series dynamic braking resistor under the power grid fault is analyzed, the mathematical model of asynchronous wind turbine.with grid-connected is established, the transient behaviors of the wind turbine generator system using series dynamic breaking resistor, parallel dynamic breaking resistor and reactive compensation device are analyzed and compared based on Matlab/Simulink,. The simulation results have shown that the series dynamic breaking resistor can effectively improve the transient stability of asynchronous wind turbine system. Using series dynamic breaking resistor and reactive compensation device simultaneously can improve the transient stability of wind turbine generator system significantly , which reducing the reactive compensation requirement and cost of wind farm.

Designing a Signal Conditioning System with Software Calibration for Resistor-feedback Patch Clamp Amplifier.

Science.gov (United States)

Hu, Gang; Zhu, Quanhui; Qu, Anlian

2005-01-01

In this paper, a programmable signal conditioning system based on software calibration for resistor-feedback patch clamp amplifier (PCA) has been described, this system is mainly composed of frequency correction, programmable gain and filter whose parameters are configured by software automatically to minimize the errors, A lab-designed data acquisition system (DAQ) is used to implement data collections and communications with PC. The laboratory test results show good agreement with design specifications.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

Transient photoconductivity in amorphous semiconductors

International Nuclear Information System (INIS)

Mpawenayo, P.

1997-07-01

Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Optical Properties of Semiconductor Quantum Dots

NARCIS (Netherlands)

Perinetti, U.

2011-01-01

This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

Science.gov (United States)

Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

2018-04-01

The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Simulasi Dinamika untuk Menentukan Stabilitas Sistem Tenaga Listrik Menggunakan Thyristor Controlled Braking Resistor pada Sistem IEEE 34 Node Test Feeder

Directory of Open Access Journals (Sweden)

Andi Taufiq

2012-09-01

Full Text Available Terdapat berbagai macam metode untuk meningkatkan stabilitas sistem  tenaga listrik. Salah satunya adalah dengan menggunakan metode pengereman dinamis (dynamic braking. Generator sinkron sebagai distributed generator yang digerakkan oleh mesin diesel. Pada saat terjadi gangguan pada sistem, digunakan sebuah Thyristor Controlled Braking Resistor (TCBR untuk meredam osilasi yang terjadi. Sistem yang hendak dianalisis dinamika dan stabilitasnnya adalah IEEE 34 node test feeder. Dengan sistem ini diilustrasikan karakteristik dan keefektifan TCBR untuk meredam osilasi frekuensi rendah dan mencegah terjadinya ketidakstabilan transien sistem. Dari hasil analisis diperoleh bahwa dengan adanya penambahan TCBR (Thyristor Controlled Braking Resistor maka respon transien sistem akan menjadi lebih baik. Hal ini ditunjukkan dengan adanya penurunan overshoot dan settling timenya. Dengan demikian sistem akan menuju kondisi stabil dengan lebih cepat setelah terjadi gangguan.

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

Basic processes and scintillator and semiconductor detectors

International Nuclear Information System (INIS)

Bourgeois, C.

1994-01-01

In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Electronics a course book for students

CERN Document Server

Olsen, G H

2013-01-01

Electronics: A Course Book for Students, Second Edition, provides a general introduction to electronics for those who find formal or examination texts to be unsuitable for their needs. This revised text includes more analytical work on circuits. Examples and examination-type exercises are also provided. The book's early chapters focus on the basic components, such as resistors, capacitors, inductors, and transistors. Readers are then introduced to combinations of these components that form the fundamental circuits from which most electronic equipment is built. Semiconductor devices are also di

DVCCs Based High Input Impedance Voltage-Mode First-Order Filters Employing Grounded Capacitor and Resistor

Directory of Open Access Journals (Sweden)

J. W. Horng

2010-12-01

Full Text Available A voltage-mode high input impedance first-order highpass, lowpass and allpass filters using two differential voltage current conveyors (DVCCs, one grounded capacitor and one grounded resistor is presented. The highpass, lowpass and allpass signals can be obtained simultaneously from the circuit configuration. The suggested filter uses a canonical number of passive components without requiring any component matching condition. The simulation results confirm the theoretical analysis.

Semiconductor integrated circuits

International Nuclear Information System (INIS)

Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

1979-01-01

An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

Science.gov (United States)

Kim, Jung Yong; Chung, In Jae

2018-03-01

A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Science.gov (United States)

Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

2013-09-14

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Acceptors in II-IV Semiconductors - Incorporation and Complex Formation

CERN Multimedia

2002-01-01

A strong effort is currently devoted to the investigation of defects and the electrical activation of dopant atoms in II-VI semiconductors. In particular, the knowledge about the behaviour of acceptors, prerequisite for the fabrication of p-type semiconductors, is rather limited. The perturbed $\\,{\\gamma\\gamma}$ -angular correlation technique (PAC) and the photoluminescence spectroscopy (PL) using the radioactive isotopes $^{77}\\!$Br and $^{111}\\!$Ag will be applied for investigating the behaviour of acceptor dopant atoms and their interactions with defects in II-VI semiconductors. The main topic will be the identification of the technical conditions for the incorporation of electrically active acceptors in the II-VI semiconductors ~ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe with particular emphasis on the compounds~ CdTe, ZnSe, and ZnTe. The investigations will be supplemented by first exploratory PL experiments with the group V acceptors $^{71}\\!$As and $^{121}\\!$Sb. With help of the probe $^{111}\\!$Ag, the pos...

Conduction in rectangular quasi-one-dimensional and two-dimensional random resistor networks away from the percolation threshold.

Science.gov (United States)

Kiefer, Thomas; Villanueva, Guillermo; Brugger, Jürgen

2009-08-01

In this study we investigate electrical conduction in finite rectangular random resistor networks in quasione and two dimensions far away from the percolation threshold p(c) by the use of a bond percolation model. Various topologies such as parallel linear chains in one dimension, as well as square and triangular lattices in two dimensions, are compared as a function of the geometrical aspect ratio. In particular we propose a linear approximation for conduction in two-dimensional systems far from p(c), which is useful for engineering purposes. We find that the same scaling function, which can be used for finite-size scaling of percolation thresholds, also applies to describe conduction away from p(c). This is in contrast to the quasi-one-dimensional case, which is highly nonlinear. The qualitative analysis of the range within which the linear approximation is legitimate is given. A brief link to real applications is made by taking into account a statistical distribution of the resistors in the network. Our results are of potential interest in fields such as nanostructured or composite materials and sensing applications.

Organic / IV, III-V Semiconductor Hybrid Solar Cells

Directory of Open Access Journals (Sweden)

Pang-Leen Ong

2010-03-01

Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-01-01

Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

Semiconductor X-ray detectors

CERN Document Server

Lowe, Barrie Glyn

2014-01-01

Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2016-07-18

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

Neutron and gamma irradiation effects on power semiconductor switches

International Nuclear Information System (INIS)

Schwarze, G.E.; Frasca, A.J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

Science.gov (United States)

Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

2012-04-01

In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

Reliability and radiation effects in compound semiconductors

CERN Document Server

Johnston, Allan

2010-01-01

This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

Science.gov (United States)

Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

2012-08-01

Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

Spectra of magnetoplasma polaritons in a semiconductor layer on a metallic substrate

International Nuclear Information System (INIS)

Beletsekii, N.N.; Gasan, E.A.; Yakovenko, V.M.

1988-01-01

The dispersion properties of volume and surface magnetoplasma polaritons in a three-layer metal-semiconductor-insulator structure are studied. It is predicted that surface magnetoplasma polaritons propagating on the two boundaries of the semiconductor layer interact resonantly. It is shown that for a certain direction of propagation the dispersion curves of surface and volume magnetoplasma polaritons contain sections with negative dispersion. Nonreciprocal propagation of volume magnetoplasma polaritons has been observed. Losses in the semiconductor layer split the starting spectral lines into dispersion curves of two types, corresponding to forward and backward waves

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Elimination of voltage reversal in multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFCs) stacking system by resistor control.

Science.gov (United States)

Kim, Bongkyu; Chang, In Seop

2018-08-01

Voltage reversal (VR) in series connection of multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFC) is eliminated by manipulating the resistor control. Discharge test results collected from two mMEA-MFCs initially operated (designated as P1 and P2) confirm that the performance of P2 exceeds that of P1. Thus, driving P1 and P2 as serially stacked MFCs generate the VR in P1. Controlling the inserted resistor adjust the current production of P2 to maintain balance with P1, and the VR in P1 is eliminated in the operation of stacking mode. Thus, manipulating the internal resistance provide an applicable approach to suppress VR in the stacking of mMEA-MFCs system. Copyright © 2018 Elsevier Ltd. All rights reserved.

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

Characterization of advanced semiconductor materials by positron annihilation

International Nuclear Information System (INIS)

Uedono, Akira; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Ishibashi, Shoji

2005-01-01

Positron annihilation is an established technique for investigating vacancy-type defects near surfaces or interfaces. Using this technique, one can identify defect species in a nondestructive manner. Because there is no restriction of sample conductivity or temperature, this technique can be applied to a various materials, such as semiconductors, metals, metal oxides, and polymers. The positron annihilation has been applied to the studies of Si-technology related materials, which show that it can provide useful information for the development of semiconductor devices. In this article, we report the results obtained for electroplated Cu, strained Si and high-k materials. (author)

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

A semiconductor parameter analyzer for ionizing radiation detectors

International Nuclear Information System (INIS)

Santos, Luiz A.P.

2009-01-01

Electrometers and ion chamber are normally used to make several types of measurements in a radiation field and there is a unique voltage applied to each detector type. Some electronic devices that are built of semiconductor materials like silicon crystal can also be used for the same purpose. In this case, a characteristic curve of the device must be acquired to choose an operation point which consists of an electrical current or voltage to be applied to the device. Unlike ion chambers, such an electronic device can have different operation points depending on its current versus voltage curve (I x V). The best operation point of the device is also a function of the radiation, energy, dose rate and fluence. The purpose of this work is to show a semiconductor parameter analyzer built to acquire I x V curves as usually, and the innovation here is the fact that it can be used to obtain such a parametric curve when a quad-polar device is under irradiation. The results demonstrate that the system is a very important tool to scientists interested to evaluate a semiconductor detector before, during and after irradiation. A collection of results for devices under an X-ray beam and a neutron fluence are presented: photodiode, phototransistors, bipolar transistor and MOSFET. (author)

Tunneling spectroscopy on semiconductors with a low surface state density

OpenAIRE

Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

1997-01-01

A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

Science.gov (United States)

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

International Nuclear Information System (INIS)

Mekhtiyev, M.A.; Kalina, V.A.

1980-01-01

The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

Logarithmic corrections to scaling in critical percolation and random resistor networks.

Science.gov (United States)

Stenull, Olaf; Janssen, Hans-Karl

2003-09-01

We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.

Minimum spanning trees and random resistor networks in d dimensions.

Science.gov (United States)

Read, N

2005-09-01

We consider minimum-cost spanning trees, both in lattice and Euclidean models, in d dimensions. For the cost of the optimum tree in a box of size L , we show that there is a correction of order L(theta) , where theta or =1 . The arguments all rely on the close relation of Kruskal's greedy algorithm for the minimum spanning tree, percolation, and (for some arguments) random resistor networks. The scaling of the entropy and free energy at small nonzero T , and hence of the number of near-optimal solutions, is also discussed. We suggest that the Steiner tree problem is in the same universality class as the minimum spanning tree in all dimensions, as is the traveling salesman problem in two dimensions. Hence all will have the same value of theta=-3/4 in two dimensions.

Quantum resistor-capacitor circuit with Majorana fermion modes in a chiral topological superconductor.

Science.gov (United States)

Lee, Minchul; Choi, Mahn-Soo

2014-08-15

We investigate the mesoscopic resistor-capacitor circuit consisting of a quantum dot coupled to spatially separated Majorana fermion modes in a chiral topological superconductor. We find substantially enhanced relaxation resistance due to the nature of Majorana fermions, which are their own antiparticles and are composed of particle and hole excitations in the same abundance. Further, if only a single Majorana mode is involved, the zero-frequency relaxation resistance is completely suppressed due to a destructive interference. As a result, the Majorana mode opens an exotic dissipative channel on a superconductor which is typically regarded as dissipationless due to its finite superconducting gap.

High Gain Hybrid Graphene-Organic Semiconductor Phototransistors

NARCIS (Netherlands)

Huisman, Everardus H.; Shulga, Artem G.; Zomer, Paul J.; Tombros, Nikolaos; Bartesaghi, Davide; Bisri, Satria Zulkarnaen; Loi, Maria A.; Koster, L. Jan Anton; van Wees, Bart J.

2015-01-01

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a

A semiconductor laser device

Energy Technology Data Exchange (ETDEWEB)

Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

1984-03-17

A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

Analysis of Logistics Costs of the Ukrainian Semiconductor Industry

Directory of Open Access Journals (Sweden)

Popova Viktoriya D.

2014-01-01

Full Text Available The goal of the article is analysis of logistics costs in production of semiconductor materials using example of two Ukrainian enterprises. The article studies influence of logistics management and logistics costs upon formation of the final cost value (price of a commodity (service. It gives an assessment of logistics costs of Ukrainian semiconductor enterprises and establishes its structure by types of main expenditure items: material, transport, production and storehouse. It establishes the generalised quantitative structure of logistics costs of Ukrainian semiconductor enterprises with various forms of ownership under conditions of a situational growth of cost value of products and reduction of profitability of production, caused by common crisis tendencies in economy. Prospects of further studies in this direction are analysis of costs in production of semiconductor products and establishment of the specific feature of their grouping and classifying from the point of view of logistics and justification of the model of assessment of cost value of products, which takes into account mutually contradictory influence of direct logistics costs and logistics management upon the final result.

Electroless silver plating of the surface of organic semiconductors.

Science.gov (United States)

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Organic Semiconductor Photovoltaics

Science.gov (United States)

Sariciftci, Niyazi Serdar

2005-03-01

Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

Spectroscopic analysis of optoelectronic semiconductors

CERN Document Server

Jimenez, Juan

2016-01-01

This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won; Rondinone, Adam Justin; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2017-09-19

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

Science.gov (United States)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Catalyzed reactions at illuminated semiconductor interfaces

International Nuclear Information System (INIS)

Wrighton, M.S.

1984-01-01

Many desirable minority carrier chemical redox processes are too slow to compete with e - -h + recombination at illuminated semiconductor/liquid electrolyte junction interfaces. Reductions of H 2 O to H 2 or CO 2 to compounds having C--H bonds are too slow to compete with e - -h + recombination at illuminated p-type semiconductors, for example. Approaches to improve the rate of the desired processes involving surface modification techniques are described. Photoanodes are plagued by the additional problem of oxidative decomposition under illumination with > or =E/sub g/ illumination. The photo-oxidation of Cl - , Br - , and H 2 O is considered to illustrate the concepts involved. Proof of concept experiments establish that catalysis can be effective in dramatically improving direct solar fuel production; efficiencies of >10% have been demonstrated

Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

OpenAIRE

渡辺, 重佳

2009-01-01

Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

Nanostructured Semiconductor Materials for Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Carmen Cavallo

2017-01-01

Full Text Available Since O’Regan and Grätzel’s first report in 1991, dye-sensitized solar cells (DSSCs appeared immediately as a promising low-cost photovoltaic technology. In fact, though being far less efficient than conventional silicon-based photovoltaics (being the maximum, lab scale prototype reported efficiency around 13%, the simple design of the device and the absence of the strict and expensive manufacturing processes needed for conventional photovoltaics make them attractive in small-power applications especially in low-light conditions, where they outperform their silicon counterparts. Nanomaterials are at the very heart of DSSC, as the success of its design is due to the use of nanostructures at both the anode and the cathode. In this review, we present the state of the art for both n-type and p-type semiconductors used in the photoelectrodes of DSSCs, showing the evolution of the materials during the 25 years of history of this kind of devices. In the case of p-type semiconductors, also some other energy conversion applications are touched upon.

Semiconductor micro cavities: half light, half matter

International Nuclear Information System (INIS)

Baumberg, Jeremy J.

2003-01-01

Quantum wells sandwiched tightly between two mirrors can be used to make a new type of laser that can amplify light more than any other known material. What do you get if you cross light with matter? It is a question that fascinates today's researchers in quantum optoelectronics, who want to see how far the physical states of the world can be intertwined. Although we have a good understanding of the quantum ingredients of optics and solids - photons and atoms - it turns out that assembling these building blocks in deliberately unfamiliar ways can lead to what is new and often quite unexpected behaviour. Consider 'quantum wells', which form the basis of modern semiconductor lasers. First developed in the 1980s, they lie at the heart of optical-communication and optical-storage technologies such as DVD players and they now have a global market of over 10bn British Pounds. Quantum wells consist of a thin sheet of crystalline semiconductor sandwiched between two sheets of another semiconductor. The outer layers squash the wavefunctions of electrons within the central sheet, increasing the electrons' energy and their interaction with light. Engineers can control the colour of the light emitted by the laser simply by adjusting the energy levels within the central sheet, which acts as a potential well. But this bug-sized playground for electrons has not just had technological ramifications. It has also spawned an enormous variety of new physics, including the quantum Hall effect, which can be used as a fundamental standard for measuring the ratio between the charge on the electron and the Planck constant. Over the last ten years researchers have also become increasingly keen to incorporate quantum wells into what are known as 'semiconductor micro cavities'. Physicists have found that these painstakingly layered materials can be used to create new quantum states that resemble superfluids and can be used in interferometric quantum devices. In the March issue of Physics

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

Directory of Open Access Journals (Sweden)

Chu Manh Hung

2017-09-01

Full Text Available Semiconductor metal oxide nanowires (SMO-NWs show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW. SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Thermodynamic concepts in semiconductor quantum dot technology

International Nuclear Information System (INIS)

Shchukin, V.

2001-01-01

Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Evaluation of efficiency of a semiconductor gamma camera

CERN Document Server

Otake, H; Takeuchi, Y

2002-01-01

We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

Electric Circuit Model Analogy for Equilibrium Lattice Relaxation in Semiconductor Heterostructures

Science.gov (United States)

Kujofsa, Tedi; Ayers, John E.

2018-01-01

The design and analysis of semiconductor strained-layer device structures require an understanding of the equilibrium profiles of strain and dislocations associated with mismatched epitaxy. Although it has been shown that the equilibrium configuration for a general semiconductor strained-layer structure may be found numerically by energy minimization using an appropriate partitioning of the structure into sublayers, such an approach is computationally intense and non-intuitive. We have therefore developed a simple electric circuit model approach for the equilibrium analysis of these structures. In it, each sublayer of an epitaxial stack may be represented by an analogous circuit configuration involving an independent current source, a resistor, an independent voltage source, and an ideal diode. A multilayered structure may be built up by the connection of the appropriate number of these building blocks, and the node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits can easily be extended to the relaxation of strained-layer structures. Furthermore, the electrical circuit model may be extended to continuously-graded epitaxial layers by considering the limit as the individual sublayer thicknesses are diminished to zero. In this paper, we describe the mathematical foundation of the electrical circuit model, demonstrate its application to several representative structures involving In x Ga1- x As strained layers on GaAs (001) substrates, and develop its extension to continuously-graded layers. This extension allows the development of analytical expressions for the strain, misfit dislocation density, critical layer thickness and widths of misfit dislocation free zones for a continuously-graded layer having an arbitrary compositional profile. It is similar to the transition from circuit

Swift-heavy ion track electronics (SITE)

International Nuclear Information System (INIS)

Fink, D.; Chadderton, L.T.; Hoppe, K.; Fahrner, W.R.; Chandra, A.; Kiv, A.

2007-01-01

An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms 'TEAMS' (tunable electrically anisotropic material on semiconductor) and 'TEMPOS' (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators

Swift-heavy ion track electronics (SITE)

Energy Technology Data Exchange (ETDEWEB)

Fink, D. [Hahn-Meitner-Institute Berlin, Glienicker Str. 100, D-14109 Berlin (Germany)]. E-mail: fink@hmi.de; Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, G.P.O. Box 4, ACT (Australia); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Fahrner, W.R. [Chair of Electronic Devices, Inst. of Electrotechnique, Fernuniversitaet, Hagen (Germany); Chandra, A. [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Kiv, A. [Ben Gurion University of the Negev, Israel, P.O. Box 653, Beer-Sheva, 84105 (Israel)

2007-08-15

An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms 'TEAMS' (tunable electrically anisotropic material on semiconductor) and 'TEMPOS' (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators.

New technical solutions of using rolling stock electrodynamical braking

Directory of Open Access Journals (Sweden)

Leonas Povilas LINGAITIS

2009-01-01

Full Text Available The paper considers some theoretical and practical problems associated with the use of traction motor are operating in the generator mode (in braking. Mathematical and graphical relationships of electrodynamic braking, taking into account the requirements raised to braking systems in rail transport are presented. The latter include discontinuity of braking process, braking force regulation, depending on the locomotive speed, mass, type of railway and other parameters. Schematic diagrams of the locomotive braking and ways of controlling the braking force by varying electric circuit parameters are presented. The authors suggested contact-free regulation method of braking resistor for controlling braking force in rheostatic braking, and resistor parameters regulate with pulse regulation mode by semiconductor devices, such as new electrical components for rolling stock – IGBT transistors operating in the key mode. Presenting energy savings power systems, which are using regenerative braking-returning energy and diesel engine or any form of hybrid traction vehicles systems, circuit diagrams, electrical parameters curves.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Two-point resistance of a resistor network embedded on a globe.

Science.gov (United States)

Tan, Zhi-Zhong; Essam, J W; Wu, F Y

2014-07-01

We consider the problem of two-point resistance in an (m-1) × n resistor network embedded on a globe, a geometry topologically equivalent to an m × n cobweb with its boundary collapsed into one single point. We deduce a concise formula for the resistance between any two nodes on the globe using a method of direct summation pioneered by one of us [Z.-Z. Tan, L. Zhou, and J. H. Yang, J. Phys. A: Math. Theor. 46, 195202 (2013)]. This method is contrasted with the Laplacian matrix approach formulated also by one of us [F. Y. Wu, J. Phys. A: Math. Gen. 37, 6653 (2004)], which is difficult to apply to the geometry of a globe. Our analysis gives the result in the form of a single summation.

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Metal oxide semiconductor thin-film transistors for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

2016-06-15

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

Onset of itinerant ferromagnetism associated with semiconductor ...

Indian Academy of Sciences (India)

In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

IDENTIFIKASI NILAI HAMBAT JENIS ARANG KAYU, ARANG KULIT MANGGA, DAN ARANG KULIT PISANG: BAHAN ALTERNATIF PENGGANTI RESISTOR FILM KARBON

Directory of Open Access Journals (Sweden)

Intan Kusumawati

2014-05-01

Full Text Available Penelitian ini bertujuan untuk mengetahui nilai hambat jenis pada arang kayu, arang kulit mangga, dan arang kulit pisang sebagai bahan alternatif pengganti resistor film karbon. Pada penelitian ini dilakukan penumbukkan arang kayu, arang kulit mangga, dan kulit pisang sehingga dihasilkan bubuk arang yang halus melalui proses penyaringan. Setelah itu dilakukan pemampatan arang kayu dalam pipet/sedotan plastik dengan luas permukaan (A = 4,08 x 10-4 cm. Kemudian hambatan diukur menggunakan multimeter dan dilakukan perhitungan hambat jenis arang tersebut. Hasil penelitian menunjukkan bahwa arang kayu (0,73 x 106 m memiliki nilai hambat yang tinggi sehingga hambat jenisnya juga lebih tinggi dibandingkan dengan arang kulit mangga (0,28 x 106  m dan arang kulit pisang (0,24 x 106 m. Hal ini dikarenakan terjadi proses karbonisasi sempurna dalam pembuatan arang kayu. Oleh karena nilai hambatan yang dapat terbaca pada multimeter hanya menggunakan batas skala yang besar (Mega Ohm, maka arang kulit kayu, arang kulit mangga, dan arang kulit pisang hanya dapat dijadikan sebagai bahan alternatif pengganti resistor film karbon dengan ukuran nilai hambatan besar.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

Energy Technology Data Exchange (ETDEWEB)

Aghili Yajadda, Mir Massoud [CSIRO Manufacturing Flagship, P.O. Box 218, Lindfield NSW 2070 (Australia)

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at high voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.

Microstructure development in RuO2-glass thick-film resistors and its effect on the electrical resistivity

International Nuclear Information System (INIS)

Yamaguchi, T.; Iizuka, K.

1990-01-01

Microstructure development in RuO 2 -glass thick-film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO 2 particle aggregates, and agglomeration of RuO 2 particles. The resistivity-firing temperature relationship has been correlated with the microstructure development

Main principles of developing exploitation models of semiconductor devices

Science.gov (United States)

Gradoboev, A. V.; Simonova, A. V.

2018-05-01

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IR-LEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Science.gov (United States)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

Science.gov (United States)

Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

2013-12-01

We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

Science.gov (United States)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

papers, the authors have not carried out the necessary control experiments and materials characterization to convincingly eliminate these possibilities. The former includes the growth of films without the magnetic dopant and the associated demonstration of the absence of ferromagnetism. Magnetic secondary phase formation is particularly problematic because in order to inject enough magnetic dopant to generate appreciable magnetization and spin polarization, one must often exceed the solid solubility of the dopant in the host. If the dopant is itself ferromagnetic in its elemental state, or if unintended magnetic products nucleate, spurious ferromagnetism will occur. Moreover, it is often a major analysis challenge to detect secondary phases when they consist of only a few per cent of the dopant; element specific spectroscopies such as x-ray absorption have been invaluable in this task. Powder diffraction is not sufficiently sensitive for this level of analysis. Against this backdrop, this focus issue of New Journal of Physics now appears. The editors' principal goal in soliciting papers has been to encourage investigators to submit work in which the necessary experiments have been done to allow the material to be adequately characterized. This collection contains a mix of experimental and theoretical papers, and many different types of materials are covered. This focus issue thus constitutes a snapshot in time of a fast-moving and fascinating field of materials physics. Reference [1] Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019 Focus on Dilute Magnetic Semiconductors Contents Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As E De Ranieri, A W Rushforth, K Výborný, U Rana, E Ahmad, R P Campion, C T Foxon, B L Gallagher, A C Irvine, J Wunderlich and T Jungwirth Structure and magnetism of cobalt-doped ZnO thin films M Ivill, S J Pearton, S Rawal, L Leu, P Sadik, R Das, A F Hebard, M

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

High-mobility pyrene-based semiconductor for organic thin-film transistors.

Science.gov (United States)

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

Influence of semiconductor/metal interface geometry in an EMR sensor

KAUST Repository

Sun, Jian

2013-02-01

The extraordinary magnetoresistance (EMR) is well known to be strongly dependent on geometric parameters. While the influence of the aspect ratios of the metal and semiconductor areas has been thoroughly investigated, the geometry of the semiconductor/metal interface has been neglected so far. However, from a fabrication point of view, this part plays a crucial role. In this paper, the performance of a bar-type hybrid EMR sensor is investigated by means of finite element method and experiments with respect to the hybrid interface geometry. A 3-D model has been developed, which simulates the EMR effect in case of fields in different directions. The semiconductor/metal interface has been investigated in terms of different layer thicknesses and overlaps. The results show that those parameters can cause a change in the output sensitivity of 2%-10%. In order to maintain a high sensitivity and keep the fabrication relatively simple and at low cost, a device with a thin metal shunt having a large overlap on the top of the semiconductor bar would provide the best solution. © 2001-2012 IEEE.

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

New Icosahedral Boron Carbide Semiconductors

Science.gov (United States)

Echeverria Mora, Elena Maria

Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

Current redistribution in resistor networks: Fat-tail statistics in regular and small-world networks.

Science.gov (United States)

Lehmann, Jörg; Bernasconi, Jakob

2017-03-01

The redistribution of electrical currents in resistor networks after single-bond failures is analyzed in terms of current-redistribution factors that are shown to depend only on the topology of the network and on the values of the bond resistances. We investigate the properties of these current-redistribution factors for regular network topologies (e.g., d-dimensional hypercubic lattices) as well as for small-world networks. In particular, we find that the statistics of the current redistribution factors exhibits a fat-tail behavior, which reflects the long-range nature of the current redistribution as determined by Kirchhoff's circuit laws.

Charge pulse preamplifier

International Nuclear Information System (INIS)

Libs, Gerard.

1973-01-01

A charge pulse preamplifier with very low background noise is described. The inlet stage of that preamplifier comprises a cooled field-effect transistor receiving the signal to be amplified at its gate input. Preferably, the charge resistor of said transistor is a field effect transistor, the source inlet of which is connected to the drain inlet of the former transistor through a self-induction coil and a resistor mounted in series. This can be applied to the treatment of the signals delivered by a particle detector in the form of a semi-conductor [fr

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

International Nuclear Information System (INIS)

Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

2014-01-01

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic

Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

Energy Technology Data Exchange (ETDEWEB)

Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

2014-04-14

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Tantalum-based semiconductors for solar water splitting.

Science.gov (United States)

Zhang, Peng; Zhang, Jijie; Gong, Jinlong

2014-07-07

Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

Control rod for FBR type reactor

International Nuclear Information System (INIS)

Nakai, Koichi.

1993-01-01

In a control rod for an LMFBR type reactor, a thermal resistor is disposed between a temperature sensitive cylinder and a cam unit support rod. A thermal expansion difference due to the temperature difference is caused between the temperature sensitive cylinder and the cam unit support rod only upon abrupt temperature change of coolants. A control rod shaft extending mechanism of downwardly depressing an absorbent portion by amplifying the thermal expansion difference by an extension link mechanism and the cam unit is provided. The thermal resistor comprises inconel 625 or like other steel of small heat conductivity. If a certain abnormality should cause to the reactor system to elevate the coolant temperature in the reactor elevates abruptly and the reactor shutdown system does not actuate, since the control rod extension shaft extends to urge the absorbent and lower the reactor core reactivity, so that leading to serious accident can be prevented surely. Further, the control rod extension shaft does not extend upon moderate temperature elevation in the usual startup and causes no unnecessary reactivity change. (N.H.)

Comparison of three resistor network division circuits for the readout of 4×4 pixel SiPM arrays

International Nuclear Information System (INIS)

Stratos, David; Maria, Georgiou; Eleftherios, Fysikopoulos; George, Loudos

2013-01-01

The purpose of this study is to investigate the behavior of a flexible SensL's silicon photomultiplier array (SPMArray4) photodetector for possible applications in PET imaging. We have designed and evaluated three different resistor network division circuits to read out the signal outputs of a 4×4 pixel SiPM array. We have applied firstly (i) a symmetric resistive voltage division circuit, secondly (ii) a symmetric resistive charge division circuit and thirdly (iii) a charge division multiplexing resistor network reducing the 16 pixel outputs to 4 position signals. In the first circuit the SensL SPMArray4-A0 preamplification electronics and a SPMArray4-A1 evaluation board providing the 16 pixels voltage outputs were used, before the symmetric resistive voltage network. We reduced the 16 voltage signals firstly to 4X and 4Y coordinate signals. Then those signals were further reduced to 2X and 2Y position signals connected via a resistor network. In the second readout circuit we have used the same technique but without the preamplification stage. The third circuit is based on a discretized positioning circuit, which multiplexes the 16 signals from the SiPM array to 4 position signals. The 4 position signals (Xa, Xb, Yc and Yd) were digitized using a free running sampling technique. An FPGA (Spartan 6 LX16) was used for triggering and signal processing of the pulses. We acquired raw images and energy histograms of a BGO and a CsI:Na pixilated scintillator under 22 Na excitation. A clear visualization of the discrete 2×2×5 mm 3 pixilated BGO scintillator elements as well as the 1×1×5 mm 3 pixilated CsI:Na crystal array was achieved with all applied readout circuits. The symmetric resistive charge division circuit provides higher peak to valley ratio than the other readout circuits. Τhe sensitivity and the energy resolution remained almost constant for the three circuits

Semiconductor industry wafer fab exhaust management

CERN Document Server

Sherer, Michael J

2005-01-01

Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts

OpenAIRE

Lee, Kevin C.

1998-01-01

Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance of the devices as resistance standards. Covering the contacts with a film, such as a low-temperature silicon nitride, that is impervious to humidity and other contaminants in the atmosphere preven...

Nanoelectronics «bottom – up»: current generation, generalized Ohm’s law, elastic resistors, conductivity modes, thermoelectricity

Directory of Open Access Journals (Sweden)

Юрій Олексійович Кругляк

2015-07-01

Full Text Available General questions of electronic conductivity, current generation with the use of electrochemical potentials and Fermi functions, elastic resistor model, ballistic and diffusion transport, conductivity modes, n- and p-conductors and graphene, formulation of the generalized Ohm’s law, thermoelectric phenomena of Seebeck and Peltier, quality indicators and thermoelectric optimization, ballistic and diffusive phonon heat current are discussed in the frame of the «bottom – up» approach of modern nanoelectronics

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Thermocapillary actuation by optimized resistor pattern: bubbles and droplets displacing, switching and trapping.

Science.gov (United States)

Selva, Bertrand; Miralles, Vincent; Cantat, Isabelle; Jullien, Marie-Caroline

2010-07-21

We report a novel method for bubble or droplet displacement, capture and switching within a bifurcation channel for applications in digital microfluidics based on the Marangoni effect, i.e. the appearance of thermocapillary tangential interface stresses stemming from local surface tension variations. The specificity of the reported actuation is that heating is provided by an optimized resistor pattern (B. Selva, J. Marchalot and M.-C. Jullien, An optimized resistor pattern for temperature gradient control in microfluidics, J. Micromech. Microeng., 2009, 19, 065002) leading to a constant temperature gradient along a microfluidic cavity. In this context, bubbles or droplets to be actuated entail a surface force originating from the thermal Marangoni effect. This actuator has been characterized (B. Selva, I. Cantat, and M.-C. Jullien, Migration of a bubble towards a higher surface tension under the effect of thermocapillary stress, preprint, 2009) and it was found that the bubble/droplet (called further element) is driven toward a high surface tension region, i.e. toward cold region, and the element velocity increases while decreasing the cavity thickness. Taking advantage of these properties three applications are presented: (1) element displacement, (2) element switching, detailed in a given range of working, in which elements are redirected towards a specific evacuation, (3) a system able to trap, and consequently stop on demand, the elements on an alveolus structure while the continuous phase is still flowing. The strength of this method lies in its simplicity: single layer system, in situ heating leading to a high level of integration, low power consumption (P < 0.4 W), low applied voltage (about 10 V), and finally this system is able to manipulate elements within a flow velocity up to 1 cm s(-1).

Mercuric iodide semiconductor detectors encapsulated in polymeric resin

Energy Technology Data Exchange (ETDEWEB)

Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

2015-07-01

The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

International Nuclear Information System (INIS)

Brudnyi, V. N.; Kolin, N. G.; Smirnov, L. S.

2007-01-01

A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F lim ) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F lim is identical to G >/2, where G > is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F lim , the calculated values of G >/2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controlling the variation in the quantity F lim in groups of semiconductors with the similar types of chemical bonding are analyzed

Neutron and gamma irradiation effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors