WorldWideScience

Sample records for resistor type semiconductor

  1. On load resistor noise in preamplifiers for semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

    1975-01-01

    The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

  2. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    Science.gov (United States)

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  3. The molecularly controlled semiconductor resistor: how does it work?

    Science.gov (United States)

    Capua, Eyal; Natan, Amir; Kronik, Leeor; Naaman, Ron

    2009-11-01

    We examine the current response of molecularly controlled semiconductor devices to the presence of weakly interacting analytes. We evaluate the response of two types of devices, a silicon oxide coated silicon device and a GaAs/AlGaAs device, both coated with aliphatic chains and exposed to the same set of analytes. By comparing the device electrical response with contact potential difference and surface photovoltage measurements, we show that there are two mechanisms that may affect the underlying substrate, namely, formation of layers with a net dipolar moment and molecular interaction with surface states. We find that whereas the Si device response is mostly correlated to the analyte dipole, the GaAs device response is mostly correlated to interactions with surface states. Existence of a silicon oxide layer, whether native on the Si or deliberately grown on the GaAs, eliminates analyte interaction with the surface states.

  4. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    Science.gov (United States)

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  5. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  6. Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors

    DEFF Research Database (Denmark)

    Hansen, Ole; Reck, Kasper; Thomsen, Erik Vilain

    2008-01-01

    We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we...... than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics...

  7. High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

    1985-01-01

    BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

  8. Detection and quantification through a lipid membrane using the molecularly controlled semiconductor resistor.

    Science.gov (United States)

    Bavli, Danny; Tkachev, Maria; Piwonski, Hubert; Capua, Eyal; de Albuquerque, Ian; Bensimon, David; Haran, Gilad; Naaman, Ron

    2012-01-10

    The detection of covalent and noncovalent binding events between molecules and biomembranes is a fundamental goal of contemporary biochemistry and analytical chemistry. Currently, such studies are performed routinely using fluorescence methods, surface-plasmon resonance spectroscopy, and electrochemical methods. However, there is still a need for novel sensitive miniaturizable detection methods where the sample does not have to be transferred to the sensor, but the sensor can be brought into contact with the sample studied. We present a novel approach for detection and quantification of processes occurring on the surface of a lipid bilayer membrane, by monitoring the current change through the n-type GaAs-based molecularly controlled semiconductor resistor (MOCSER), on which the membrane is adsorbed. Since GaAs is susceptible to etching in an aqueous environment, a protective thin film of methoxysilane was deposited on the device. The system was found to be sensitive enough to allow monitoring changes in pH and in the concentration of amino acids in aqueous solution on top of the membrane. When biotinylated lipids were incorporated into the membrane, it was possible to monitor the binding of streptavidin or avidin. The device modified with biotin-streptavidin complex was capable of detecting the binding of streptavidin antibodies to immobilized streptavidin with high sensitivity and selectivity. The response depends on the charge on the analyte. These results open the way to facile electrical detection of protein-membrane interactions.

  9. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  10. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  11. Thermal resistor on the base of silicon and some polymer semiconductors

    International Nuclear Information System (INIS)

    Marupov, R.; Kasimov, Sh.T.; Achilov, T.Kh.; Karimov, Kh.S.; Akhmedov, Kh.M.

    1995-01-01

    The purpose of present work is investigation electrical properties ofthermal resistors which was made from second cast poly-crystal silicon,poly-carbazole, and compositions of poly-crystal silicon and poly-carbazole

  12. SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  13. Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  14. Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  15. Determining the influence of temperature on various types of standard resistors

    CSIR Research Space (South Africa)

    Marais, EL

    2006-10-01

    Full Text Available Types of Standard Resistors Speaker / Author: E.L. Marais CSIR National Metrology Laboratory PO Box 395, Pretoria, 0001, South Africa Email: elmarais@csir.co.za Phone: 012 841 3013 Fax: 012 841 2131 Abstract The temperature coefficient...

  16. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Science.gov (United States)

    Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

    2010-06-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  17. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    International Nuclear Information System (INIS)

    Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

    2010-01-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  18. Resistor holder

    Science.gov (United States)

    Broadhurst, John H.

    1989-01-01

    A resistor device for use with electrostatic particle accelerators includes a resistor element positioned within a tubular housing having a fixed end cap at one end thereof and a movable end cap at the other end thereof. The tubular housing, fixed end cap, and movable end cap serve as an electromagnetic field for the resistor element. Conductive disks engage opposite ends of the resistor element and concentrically position the resistor element within the tubular housing. Helical springs engage the conductive disks and the end caps to yieldably support the movable end caps and resistor element for yieldable axial movement relative to the tubular housing. An annular conducting ring is secured to the tubular housing and is spaced radially from the movable end cap and cooperates with the latter to define an annular spark gap.

  19. Microstructure and electrical properties of slug-type resistors based on B4C and TiC - ESCA - XPS and impedance spectroscopy investigations

    International Nuclear Information System (INIS)

    Klimiec, E.; Zaraska, W.; Stobiecki, T.; Bak, W.; Starzyk, F.

    2000-01-01

    The microstructure and electrical properties of slug-type resistors based on B 4 C and TiC were investigated. From XPS measurements was deducted that Ti in TiO 2 is in intermediate oxidation number between Ti +4 and Ti +3 . The impedance of both type of resistors is independent on frequency in the range from 10 3 to 10 4 Hz, only very subtle differences above 10 4 Hz are observed. The metallic type conductivity in TiC and semiconducting in B 4 C was established. (author)

  20. Application to printed resistors

    International Nuclear Information System (INIS)

    Hachiyanagi, Yoshimi; Uraki, Hisatsugu; Sawamura, Masashi

    1989-01-01

    Most of printed circuit boards are made at present by etching copper foils which are laminated on insulating composite boards of paper/phenol resin or glass nonwoven fabric/epoxy rein. This is called subtractive process, and since this is a wet process, the problem of coping with the pollution due to etching solution, plating solution and others is involved. As the method of solving this problem, attention has been paid to the dry process which forms conductor patterns by screen printing using electro-conductive paste. For such resin substrates, generally polymer thick films (PTF) using thermosetting resin as the binder are used. Also the research on the formation of resistors, condensers and other parts by printing using the technology of cermet thick films (CTF) and PTF is active, and it is partially put in practical use. The problems are the deformation and deterioration of substrates, therefore, as the countermeasures, electron beam hardening type PTF has been studied, and various pastes have been developed. In this paper, electron beam hardening type printed resistors are reported. The features, resistance paste, and a number of the experiments on printed resistors are described. (K.I.)

  1. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  2. n-Type organic semiconductors in organic electronics.

    Science.gov (United States)

    Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

    2010-09-08

    Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

  3. N-Bit Binary Resistor

    Science.gov (United States)

    Tcheng, Ping

    1989-01-01

    Binary resistors in series tailored to precise value of resistance. Desired value of resistance obtained by cutting appropriate traces across resistors. Multibit, binary-based, adjustable resistor with high resolution used in many applications where precise resistance required.

  4. Vamistor resistor investigation

    Science.gov (United States)

    1973-01-01

    Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

  5. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  6. Method to induce a conductivity type in a semiconductor

    International Nuclear Information System (INIS)

    Aboaf, J.A.; Sedgwick, T.O.

    1977-01-01

    The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

  7. Noise characteristics of resistors buried in low-temperature co-fired ceramics

    International Nuclear Information System (INIS)

    Kolek, A; Ptak, P; Dziedzic, A

    2003-01-01

    The comparison of noise properties of conventional thick film resistors prepared on alumina substrates and resistors embedded in low-temperature co-fired ceramics (LTCCs) is presented. Both types of resistors were prepared from commercially available resistive inks. Noise measurements of LTCC resistors below 1 kHz show Gaussian 1/f noise. This is concluded from the calculations of the second spectra as well as from studying the volume dependence of noise intensity. It has occurred that noise index of LTCC resistors on average is not worse than that of conventional resistors. A detailed study of co-fired surface resistors and co-fired buried resistors show that burying a resistor within LTCC substrate usually leads to (significant) enhancement of resistance but not of noise intensity. We interpret this behaviour as another argument in favour of tunnelling as the dominant conduction mechanism in LTCC resistors

  8. Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

    International Nuclear Information System (INIS)

    Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel

    2009-01-01

    Electronic-behavior modeling of three-dimensional (3D) p + -π-p + and n + -ν-n + semiconducting diffusible devices with highly accurate resistances for the design of analog resistors, which are compatible with the CMOS (complementary-metal-oxide-semiconductor) technologies, is performed in three dimensions with the fast tube multiplexing method (TMM). The current–voltage (I–V) curve of a silicon device is usually computed with traditional device simulators of technology computer-aided design (TCAD) based on the finite-element method (FEM). However, for the design of 3D p + -π-p + and n + -ν-n + diffusible resistors, they show a high computational cost and convergence that may fail with fully non-separable 3D dopant concentration profiles as observed in many diffusible resistors resulting from laser trimming. These problems are avoided with the proposed TMM, which divides the 3D resistor into one-dimensional (1D) thin tubes with longitudinal axes following the main orientation of the average electrical field in the tubes. The I–V curve is rapidly obtained for a device with a realistic 3D dopant profile, since a system of three first-order ordinary differential equations has to be solved for each 1D multiplexed tube with the TMM instead of three second-order partial differential equations in the traditional TCADs. Simulations with the TMM are successfully compared to experimental results from silicon-based 3D resistors fabricated by laser-induced dopant diffusion in the gaps of MOSFETs (metal-oxide-semiconductor field-effect transistors) without initial gate. Using thin tubes with other shapes than parallelepipeds as ring segments with toroidal lateral surfaces, the TMM can be generalized to electronic devices with other types of 3D diffusible microstructures

  9. Semiconductor type n for applications in gas sensing film

    International Nuclear Information System (INIS)

    Cerón Hurtado, Nathalie Marcela; Rodríguez Páez, Jorge Enrique

    2008-01-01

    Semiconductors are materials commonly used in the conformation of the active material in gas sensors, in this paper the synthesis routes are shown for obtaining raw material Sn02-Ti02 system, n-type semiconductor material, methods of characterization the same and the formation of thick films. The synthesis was performed using the methods of precipitation Controlled Polymeric Precursor, characterization of ceramic powders are made using techniques of differential thermal analysis and thermogravimetric (DTA / TG), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM ) and Scanning Electron Microscopy (SEM); Finally they settled in thick films by screen printing method and microstructurally characterized by Optical Microscopy (M0) and Scanning Electron Microscopy (SEM), besides this electrically characterized. The ceramic powders obtained are nanoscale high chemical purity and respond favorably formed films in the presence of oxygen and carbon monoxide.

  10. Time-adjusted variable resistor

    Science.gov (United States)

    Heyser, R. C.

    1972-01-01

    Timing mechanism was developed effecting extremely precisioned highly resistant fixed resistor. Switches shunt all or portion of resistor; effective resistance is varied over time interval by adjusting switch closure rate.

  11. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  12. Resistors Improve Ramp Linearity

    Science.gov (United States)

    Kleinberg, L. L.

    1982-01-01

    Simple modification to bootstrap ramp generator gives more linear output over longer sweep times. New circuit adds just two resistors, one of which is adjustable. Modification cancels nonlinearities due to variations in load on charging capacitor and due to changes in charging current as the voltage across capacitor increases.

  13. Babylonian Resistor Networks

    Science.gov (United States)

    Mungan, Carl E.; Lipscombe, Trevor C.

    2012-01-01

    The ancient Babylonians had an iterative technique for numerically approximating the values of square roots. Their method can be physically implemented using series and parallel resistor networks. A recursive formula for the equivalent resistance R[subscript eq] is developed and converted into a nonrecursive solution for circuits using…

  14. Temperature-controlled resistor

    Science.gov (United States)

    Perkins, T. G.

    1969-01-01

    Electrical resistance of a carbon-pile resistor is controlled by the compression or relaxation of a pile of carbon disks by a thermally actuated bimetallic spring. The concept is advantageous in that it is direct-acting, can cover a wide range of controllable characteristics, and can handle considerable power directly.

  15. A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

    International Nuclear Information System (INIS)

    Wang Yi; He Lenian; Ning Zhihua; Shao Yali

    2009-01-01

    This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

  16. A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yi; He Lenian; Ning Zhihua; Shao Yali, E-mail: wangyi@vlsi.zju.edu.c [Institute of VLSI Design, Zhejiang University, Hangzhou 310027 (China)

    2009-09-15

    This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

  17. Hartman effect in a Kane-type semiconductor quantum ring

    International Nuclear Information System (INIS)

    Cakmaktepe, S

    2007-01-01

    The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov-Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux

  18. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  19. Electrochemical characterization of liquid resistors

    International Nuclear Information System (INIS)

    Wilson, J.M.; Whiteley, R.V.

    1983-01-01

    During the first two years of operation of Sandia's Particle Beam Fusion Accelerator (PBFA I) the reliability of the CuSO 4 solution resistors in the Marx Generator Energy Storage System has been unsatisfactory. Resistor failure, which is characterized by a large increase in resistance, has been attributed to materials, production techniques, and operating parameters. The problems associated with materials and production techniques have been identified and solutions are proposed. Non-ideal operating parameters are shown to cause polarization of the cathode in the resistor. This initiates electrochemical reactions in the resistor. These reactions often lead to resistance changes and to eventual resistor failure

  20. Rancang Bangun Aplikasi Pendeteksi Tipe Dan Nilai Resistor Berbasis Android

    Directory of Open Access Journals (Sweden)

    I Putu Pratama Andika

    2015-11-01

    Full Text Available Android can be identified as the phone with the ability a high degree resembling computer, by making use of technological progress, an error in the determination of type and value of obstruction from resistors led a series of electronics result of the damage can be avoided, this is because of a resistor having the function of as parapet an electric current or as voltage divider of the series, detection so that the application of type and value of resistor able to contribute to the introduction of a resistor, by using processing tecnology digital image that is a method of hsv ( hue saturation value . Hsv useful as a limit of a color become a reference of the rings of color resistor, by applying this method application can do the introduction of against resistors diinputkan, to then give them the information relating to a type and value of a resistor. It has the percentage research success in the introduction of the value and type resistor by 57 %, to misidentified 30 % and not being recognized of 13 % .

  1. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  2. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  3. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  4. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  5. Improved switch-resistor packaging

    Science.gov (United States)

    Redmerski, R. E.

    1980-01-01

    Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

  6. Transport behaviour of commercially available 100-Omega standard resistors

    CSIR Research Space (South Africa)

    Schumacher, B

    2001-04-01

    Full Text Available Several types of commercial 100-Omega resistors can be used with the cryogenic current comparator to maintain the resistance unit, derived from the Quantized Hall Effect (QHE), and to disseminate this unit to laboratory resistance standards. Up...

  7. Positron diffusion in zinc-blende-type semiconductors

    International Nuclear Information System (INIS)

    Singh, R.P.; Singh, M.

    1992-01-01

    A theory of positron diffusion in the presence of positron scattering with acoustic, piezoelectric-acoustic, and optical phonons in zinc-blende-type semiconductors is developed. The velocity-velocity correlation function is used to calculate the diffusion coefficient and the Green's function is used to calculate the correlation function. In this formulation the relaxation time automatically appears through the imaginary part of the self-energy. The effect of screening is included within the Thomas-Fermi approximation. The theory is used to calculate the energy relaxation time and diffusion length of positrons in GaAs. It is shown that the transverse and longitudinal phonons contribute almost the same amount towards the relaxation time in the piezoelectric-acoustic-phonon scattering of positrons. It is also found that the contribution of piezoelectric-acoustic-phonon scattering is about 10% to that of acoustic-phonon scattering at low temperatures. We obtained a fairly good agreement between our theory and experimental results available to us. It is found that optical-phonon scattering plays an important role in getting good agreement between theory and experiment at high temperatures

  8. Ambipolar organic heterojunction transistors with various p-type semiconductors

    International Nuclear Information System (INIS)

    Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

    2008-01-01

    Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

  9. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  10. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  11. Producing p-type conductivity in self-compensating semiconductor material

    International Nuclear Information System (INIS)

    Vechten, J.A. van; Woodall, J.M.

    1981-01-01

    This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

  12. Calculable resistors of coaxial design

    International Nuclear Information System (INIS)

    Kucera, J; Vollmer, E; Schurr, J; Bohacek, J

    2009-01-01

    1000 Ω and 1290.64 Ω coaxial resistors with calculable frequency dependence have been realized at PTB to be used in quantum Hall effect-based impedance measurements. In contradistinction to common designs of coaxial resistors, the design described in this paper makes it possible to remove the resistive element from the shield and to handle it without cutting the outer cylindrical shield of the resistor. Emphasis has been given to manufacturing technology and suppressing unwanted sources of frequency dependence. The adjustment accuracy is better than 10 µΩ Ω −1

  13. Semiconductor neutron detectors based on new types of materials

    International Nuclear Information System (INIS)

    Pochet, T.; Foulon, F.

    1993-01-01

    Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

  14. High voltage load resistor array

    Science.gov (United States)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  15. For current viewing resistor loads

    Science.gov (United States)

    Lyons, Gregory R [Tijeras, NM; Hass, Jay B [Lee's Summit, MO

    2011-04-19

    The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.

  16. A random access memory immune to single event upset using a T-Resistor

    Science.gov (United States)

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  17. Random access memory immune to single event upset using a T-resistor

    Science.gov (United States)

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  18. H+-type and OH−-type biological protonic semiconductors and complementary devices

    Science.gov (United States)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

    2013-01-01

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems. PMID:24089083

  19. H+-type and OH- -type biological protonic semiconductors and complementary devices.

    Science.gov (United States)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Roudsari, Anita Fadavi; Rousdari, Anita Fadavi; Helms, Brett A; Zhong, Chao; Anantram, M P; Rolandi, Marco

    2013-10-03

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H(+) hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH(-) as proton holes. Discriminating between H(+) and OH(-) transport has been elusive. Here, H(+) and OH(-) transport is achieved in polysaccharide- based proton wires and devices. A H(+)- OH(-) junction with rectifying behaviour and H(+)-type and OH(-)-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H(+) and OH(-) to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

  20. Resistor cooling in a vacuum

    International Nuclear Information System (INIS)

    Crittenden, R.; Krider, J.

    1987-01-01

    This note describes thermal measurements which were done on a resistor operating both in air at one atmosphere pressure and in a vacuum of a few milliTorr. The motivation for this measurement was our interest in operating a BGO crystal-photomultiplier tube-base assembly in a vacuum, as a synchrotron radiation detector to tag electrons in the MT beam. We wished to determine what fraction of the total resistor power was dissipated by convection in air, in order to know whether there would be excessive heating of the detector assembly in a vacuum. 3 figs

  1. Development of n-type polymer semiconductors for organic field-effect transistors

    International Nuclear Information System (INIS)

    Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

    2015-01-01

    We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

  2. Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Uno, Masaaki

    1990-01-08

    As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

  3. Dual design resistor for high voltage conditioning and transmission lines

    Science.gov (United States)

    Siggins, Timothy Lynn [Newport News, VA; Murray, Charles W [Hayes, VA; Walker, Richard L [Norfolk, VA

    2007-01-23

    A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

  4. Karakteristik Tcr Dan Vcr Resistor Pasta Resistor Pada Substrat Alumina Dengan Teknologi Film Tebal

    OpenAIRE

    Raden Arief Setyawan, ST., MT., Rhezananta Arya H., Ir. M. Julius St., MS

    2014-01-01

    Resistor merupakan komponen yang sangat berperan dalam rangkaian film tebal. Resistor berteknologi film tebal mempunyai karakteristik yang terdiri dari TCR (Temperature Coefficient of Resistance) dan VCR (Voltage Coefficient of Resistance). Dari alasan di atas maka perlu untuk mengetahui bagaimana pembuatan resistor film tebal dan mengetahui karakteristiknya.Penelitian ini menggunakan proses screen printing dalam pembuatan resistor yang kemudian melalui proses pengendapan (15 menit), drying (...

  5. Remote Experiments in Resistor Measurement

    Directory of Open Access Journals (Sweden)

    Popescu Viorel

    2009-10-01

    Full Text Available The paper describes blended learningapproach to teaching resistor measurement. It is basedon “Learning by Doing” paradigm: interacticesimulation, laboratory plants, real experimentsaccessed by Web Publishing Tools under LabVIEW.Studying and experimenting access is opened for 24hours a day, 7 days a week under Moodle bookingsystem.

  6. Pressure-Sensitive Resistor Material

    Science.gov (United States)

    Du Fresne, E. R.

    1986-01-01

    Low-conductivity particles in rubber offer wide dynamic range. Sensor consists of particles of relatively low conductivity embedded in rubber. Resistance of sensor decreases by about 100 times as pressure on it increases from zero to 0.8 MN/M to the second power. Resistor promising candidate as tactile sensor for robots and remote manipulators.

  7. Discrete/PWM Ballast-Resistor Controller

    Science.gov (United States)

    King, Roger J.

    1994-01-01

    Circuit offers low switching loss and automatic compensation for failure of ballast resistor. Discrete/PWM ballast-resistor controller improved shunt voltage-regulator circuit designed to supply power from high-resistance source to low-impedance bus. Provides both coarse discrete voltage levels (by switching of ballast resistors) and continuous fine control of voltage via pulse-width modulation.

  8. 30 CFR 77.801 - Grounding resistors.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 77.801 Section 77.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH...-Voltage Distribution § 77.801 Grounding resistors. The grounding resistor, where required, shall be of the...

  9. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  10. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2016-01-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  11. Ceramic composite resistors of B4C modified by TIO2 and glass phase

    International Nuclear Information System (INIS)

    Klimiec, E.; Zaraska, W.; Stobiecki, T.

    1998-01-01

    Technical progress in the manufacturing technology of composite materials resulted in arising of new generation of bulk resistors, resistant to high levels of overloads and high temperature. These resistors can be applied in extremely heavy working conditions, for instance in cooperation with ignition circuits. The resistors investigated in our research were performed on the basis of ceramic composite consisted of semiconductor boron carbide B 4 C as conductive phase, aluminium oxide Al 2 O 3 and non-alkali glass as insulators and titanium dioxide TiO 2 . The technological procedure of the fabrication of resistors and the results of the tests, such as temperature dependence of the electrical resistance exploitation trials, are presented. (author)

  12. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-01-01

    , the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

  13. Light absorption in disordered semiconductors with a random coulomb-type field

    International Nuclear Information System (INIS)

    Arbuzov, Yu.D.; Evdokimov, V.M.; Kolenkin, M.Yu.

    1988-01-01

    A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (E g - ℎω) -1/3 , where E g is the band gap of the semiconductor, and ℎω is the photon energy. The first three terms of the series are calculated in explicit form

  14. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  15. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  17. Current limiting capability of diffused resistors

    International Nuclear Information System (INIS)

    Shedd, W.; Cappelli, J.

    1979-01-01

    An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6*10 12 rads(Si)/sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits

  18. Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

    Science.gov (United States)

    Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

    2014-01-01

    The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

  19. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    Science.gov (United States)

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  20. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  1. n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

    Energy Technology Data Exchange (ETDEWEB)

    Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

    2007-10-15

    A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

  2. Theory of electroconductivity for anisotropic semiconductors of p-Te type

    International Nuclear Information System (INIS)

    Gorlej, P.N.; Tomchuk, P.M.; Shenderovskij, V.A.

    1975-01-01

    The temperature dependence of the electric conductivity tensor has been studied in anisotropic semiconductors of Te-type with the p-type conductivity. The inelastic scattering of carriers on the optical lattice vibrations and on impurity ions is taken into account. From a general equation for the mobility tensor obtained through the variation method rather simple temperature dependences of the mobility are found for various ultimate cases. In particular, a generalization is given of the Convell-Weizscopf equation for the case of anisotropic impurity scattering. In case of a mixed impurity and lattice mechanism of scattering the temperature dependence of the mobility is plotted as a diagram for the semiconductors of p-Te parameters

  3. Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

    Science.gov (United States)

    Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

    2011-01-11

    The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

  4. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  5. Thermal aspects of resistors embedded in dielectrics

    International Nuclear Information System (INIS)

    Caprari, R.S.

    1995-10-01

    This note presents a formula for estimating the temperature of a distributed resistor or resistor chain that is immersed in a dielectric medium, which in turn is surrounded by a heat reservoir. An example computation from an actual instrument in included. 6 refs

  6. Study and field verification of the effects of removing closing resistors from 500 kV circuit breakers

    International Nuclear Information System (INIS)

    Selin, D.A.; Agrawal, B.L.; Farmer, R.G.; Demcko, J.A.

    1992-01-01

    Closing resistors in EHV circuit breakers are frequently used to reduce switching transients on lines thus preventing flashovers during line energization. Maintenance and failures of such closing resistors can be costly and reduce transmission system reliability. For these reasons, APS conducted an investigation into the technical feasibility of operating its 500 kV without closing resistors. This paper describes study results of removing closing resistors from 500 kV breakers in a system which employs older technology silicon carbide type surge arresters. The paper also describes results of field tests of the expected flashover rates calculated in the study. These field tests involve repeatedly energizing a 258 mile 500 kV line using a breaker in which the closing resistors are disabled. Transient overvoltages captured during the tests are compared with predicted overvoltages. The study concludes that closing resistors may be removed from the subject system without unacceptable consequences

  7. Characteristics of burden resistors for high-precision DC current transducers

    CERN Document Server

    Fernqvist, G; Hudson, G; Pickering, J

    2007-01-01

    The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ワpower coefficient” (PC) and test results from some different types of resistors available on the market.

  8. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  9. Random resistor network model of minimal conductivity in graphene.

    Science.gov (United States)

    Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

    2007-10-26

    Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

  10. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  11. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  12. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Science.gov (United States)

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Critical exponents for diluted resistor networks.

    Science.gov (United States)

    Stenull, O; Janssen, H K; Oerding, K

    1999-05-01

    An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

  14. Thermal Characterization of the Overload Carbon Resistors

    Directory of Open Access Journals (Sweden)

    Ivana Kostić

    2013-01-01

    Full Text Available In many applications, the electronic component is not continuously but only intermittently overloaded (e.g., inrush current, short circuit, or discharging interference. With this paper, we provide insight into carbon resistors that have to hold out a rarely occurring transient overload. Using simple electrical circuit, the resistor is overheating with higher current than declared, and dissipation is observed by a thermal camera.

  15. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  16. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  17. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

    2016-05-06

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  18. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Science.gov (United States)

    Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

    2016-05-01

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  19. Improved cryo-resistors with low temperature coefficients

    International Nuclear Information System (INIS)

    Warnecke, P.; Braun, E.

    1989-01-01

    A new type of 10- and 12.9κΩ cryo-resistors operating in a liquid helium bath with small temperature coefficient of resistivity have been built. Details for the fabrication of these improved cryo-resistors are reported. Experimental evidence of their drift rates are on the order of a few parts in 10 9 per day. A reduction of the mean pressure of 98.7 kPa in the helium dewar to 86.1 kPa, corresponding to a temperature decrease from 4.19 to 4.07 Κ, did not change the resistance value by more than the experimental resolution of 4 parts in 10 8

  20. Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ming-Hsien Li

    2016-04-01

    Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

  1. Development of a high sensitivity pinhole type gamma camera using semiconductors for low dose rate fields

    Science.gov (United States)

    Ueno, Yuichiro; Takahashi, Isao; Ishitsu, Takafumi; Tadokoro, Takahiro; Okada, Koichi; Nagumo, Yasushi; Fujishima, Yasutake; Yoshida, Akira; Umegaki, Kikuo

    2018-06-01

    We developed a pinhole type gamma camera, using a compact detector module of a pixelated CdTe semiconductor, which has suitable sensitivity and quantitative accuracy for low dose rate fields. In order to improve the sensitivity of the pinhole type semiconductor gamma camera, we adopted three methods: a signal processing method to set the discriminating level lower, a high sensitivity pinhole collimator and a smoothing image filter that improves the efficiency of the source identification. We tested basic performances of the developed gamma camera and carefully examined effects of the three methods. From the sensitivity test, we found that the effective sensitivity was about 21 times higher than that of the gamma camera for high dose rate fields which we had previously developed. We confirmed that the gamma camera had sufficient sensitivity and high quantitative accuracy; for example, a weak hot spot (0.9 μSv/h) around a tree root could be detected within 45 min in a low dose rate field test, and errors of measured dose rates with point sources were less than 7% in a dose rate accuracy test.

  2. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  3. Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

    Science.gov (United States)

    Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

    2006-05-28

    Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

  4. Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

    Science.gov (United States)

    Zoellner, Brandon

    Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

  5. Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

    Science.gov (United States)

    Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

    2009-12-09

    We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

  6. Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

    International Nuclear Information System (INIS)

    Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

    2006-01-01

    It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

  7. Studying the noise parameters of thin-film silicon resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1986-01-01

    The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

  8. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  9. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  10. Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kreitzer, B R; Houck, T L; Luchterhand, O C

    2011-07-19

    This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of {approx}1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm{sup 3} liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by {approx}0.4 C which produces a 0.7% change in resistance. The typical cooling rate is {approx}0.4 C per minute which results in {approx}0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic

  11. Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

    International Nuclear Information System (INIS)

    Kreitzer, B.R.; Houck, T.L.; Luchterhand, O.C.

    2011-01-01

    This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of ∼1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm 3 liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by ∼0.4 C which produces a 0.7% change in resistance. The typical cooling rate is ∼0.4 C per minute which results in ∼0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic is minimized while still

  12. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    Science.gov (United States)

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  13. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  14. Efficient color-tunable multiexcitonic dual wavelength emission from Type II semiconductor tetrapods.

    Science.gov (United States)

    Wu, Wen-Ya; Li, Mingjie; Lian, Jie; Wu, Xiangyang; Yeow, Edwin K L; Jhon, Mark H; Chan, Yinthai

    2014-09-23

    We synthesized colloidal InP/ZnS seeded CdS tetrapods by harnessing the structural stability of the InP/ZnS seed nanocrystals at the high reaction temperatures needed to grow the CdS arms. Because of an unexpected Type II band alignment at the interface of the InP/ZnS core and CdS arms that enhanced the occurrence of radiative excitonic recombination in CdS, these tetrapods were found to be capable of exhibiting highly efficient multiexcitonic dual wavelength emission of equal intensity at spectrally distinct wavelengths of ∼485 and ∼675 nm. Additionally, the Type II InP/ZnS seeded CdS tetrapods displayed a wider range of pump-dependent emission color-tunability (from red to white to blue) within the context of a CIE 1931 chromaticity diagram and possessed higher photostability due to suppressed multiexcitonic Auger recombination when compared to conventional Type I CdSe seeded CdS tetrapods. By employing time-resolved spectroscopy measurements, we were able to attribute the wide emission color-tunability to the large valence band offset between InP and CdS. This work highlights the importance of band alignment in the synthetic design of semiconductor nanoheterostructures, which can exhibit color-tunable multiwavelength emission with high efficiency and photostability.

  15. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  16. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

    Science.gov (United States)

    Li, Shu; Zhang, Tong

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  17. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    International Nuclear Information System (INIS)

    Li Shu; Zhang Tong

    2008-01-01

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

  18. Process for forming synapses in neural networks and resistor therefor

    Science.gov (United States)

    Fu, Chi Y.

    1996-01-01

    Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

  19. "Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

    Science.gov (United States)

    Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

    2013-12-03

    Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Physical Analysis of an Electric Resistor Heating

    Science.gov (United States)

    Perea Martins, J. E. M.

    2018-01-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

  1. Physical analysis of an electric resistor heating

    Science.gov (United States)

    Perea Martins, J. E. M.

    2018-05-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

  2. 30 CFR 75.801 - Grounding resistors.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 75.801 Section 75.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.801 Grounding...

  3. Stochastic Resonance Induced by Dichotomous Resistor in an Electric Circuit

    International Nuclear Information System (INIS)

    Li Jinghui; Han Yinxia

    2007-01-01

    An electric circuit with dichotomous resistor is investigated. It is shown that the amplitude of the average electric current washing the resistor represents the phenomenon of stochastic resonance, which is the response as a function of the correlation time of the dichotomous resistor.

  4. 30 CFR 77.510 - Resistors; location and guarding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Resistors; location and guarding. 77.510 Section 77.510 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Electrical Equipment-General § 77.510 Resistors; location and guarding. Resistors, heaters...

  5. Slew Rate Induced Distortion in Switched-Resistor Integrators

    NARCIS (Netherlands)

    Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.

    2006-01-01

    Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate

  6. A novel pseudo resistor structure for biomedical front-end amplifiers.

    Science.gov (United States)

    Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

    2015-08-01

    This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

  7. Electrical Switching of Perovskite Thin-Film Resistors

    Science.gov (United States)

    Liu, Shangqing; Wu, Juan; Ignatiev, Alex

    2010-01-01

    Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article

  8. A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

    International Nuclear Information System (INIS)

    Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

    1994-01-01

    In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

  9. Effects of electromagnetic shielding cases for semiconductor-type electronic personal dosimeters on preventing electromagnetic interference

    International Nuclear Information System (INIS)

    Deji, Shizuhiko; Ito, Shigeki; Nishizawa, Kunihide; Saze, Takuya; Mori, Kazuyuki

    2005-01-01

    Performance of electromagnetic shielding cases for preventing malfunction of semiconductor-type electronic personal dosimeters (SEPDs) caused by high frequency electromagnetic fields emitted from a digital cellular telephone (cell phone) and a card reader of access control system were analyzed. The cases were handcrafted by using cloth of activated carbon fiber, polyester film laminated metal, and two kinds of metal netting. Five kinds of SEPDs put in the cases were exposed to the high frequency electromagnetic fields for 50 sec or 1 min. The cases prevented perfectly the malfunction due to the cell phone. The cases shortened distances required to prevent the malfunction due to the card reader, but did not prevent the malfunction. The electromagnetic immunity level of SEPD inserted in the cases increased from greater than 11.2 to greater than 18.7 times for the cell phone and from 1.1 to greater than 4.3 times for the card reader. The maximum of electromagnetic shielding effectiveness of each case was greater than 18.7 times for the cell phone and greater than 4.3 times for the card reader. (author)

  10. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  11. A clinical implementation of in vivo dosimetry with n-type Isorad semiconductor diodes

    Directory of Open Access Journals (Sweden)

    Rutonjski Laza M.

    2014-01-01

    Full Text Available The study was aimed to check the radiotherapy treatment accuracy and definition of action levels during implementation of in vivo dosimetry as a part of quality assurance program. The calibration and correction factors for in vivo entrance dose measurements for six n-type Isorad semiconductor diodes were determined as recommended by the European Society for Radiotherapy and Oncology Booklet No. 5. The patients for in vivo measurements have been divided in groups, according to the treatment site/techique, in order to investigate and detect the groups where the uncertainty was larger or where a systematic error occurred. The tolerance/action levels for all groups were also defined and checked. In this study, the entrance dose measurements were performed for total of 451 treatment fields, and 338 patients over one year period. The mean value and the standard deviation for different groups were: breast +1.0% ± 2.89%(1 SD, brain, and head and neck - +0.74% ± 2.04%(1 SD, and isocentric pelvis and abdomen - +0.1% ± 2.86%(1 SD. All measurements - +0.72% ± 2.64%(1 SD. In our experience, systematic in vivo dosimetry proved to be a very useful tool for quality assurance of patient's plan and treatment, both in detecting systematic errors and for estimating the accuracy of radiotherapy treatment delivery.

  12. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  13. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  14. Rational and irrational numbers from unit resistors

    International Nuclear Information System (INIS)

    Kasperski, Maciej; Kłobus, Waldemar

    2014-01-01

    We address the problem of constructing a network of unit resistors such that it enables the retrieval of an arbitrary value of equivalent resistance. In particular, we employ the notion of continued fractions to construct a ladder network by which we can easily obtain any fractional value resistance. In addition, since any irrational number is associated with an infinite continued fraction, we discuss the convergence of the equivalent resistance of an infinite resistive ladder and various aspects concerning the approximations of arbitrary numbers attained by adding additional resistors successively to the network. The presented methods can be easily implemented in an educational laboratory and offer an interesting addition to the topic of Ohm’s law. (paper)

  15. Effects of surfaces on resistor percolation.

    Science.gov (United States)

    Stenull, O; Janssen, H K; Oerding, K

    2001-05-01

    We study the effects of surfaces on resistor percolation at the instance of a semi-infinite geometry. Particularly we are interested in the average resistance between two connected ports located on the surface. Based on general grounds as symmetries and relevance we introduce a field theoretic Hamiltonian for semi-infinite random resistor networks. We show that the surface contributes to the average resistance only in terms of corrections to scaling. These corrections are governed by surface resistance exponents. We carry out renormalization-group improved perturbation calculations for the special and the ordinary transition. We calculate the surface resistance exponents phiS and phiS(infinity) for the special and the ordinary transition, respectively, to one-loop order.

  16. Biphase sinusoidal oscillator based on negative resistor.

    Science.gov (United States)

    Bayard, Jean

    2010-06-01

    This paper describes a biphase sinusoidal generator which provides two signals: v(ref)=V(M) sin(omegat) and v(out)=V(M) sin(omegat+DeltaPhi), where DeltaPhi is in the range 0, pi/2 or -pi/2, 0 and is not dependent on the frequency value. It is based on a negative resistor and it requires very few components. SPICE simulations and measurements on an experimental setup confirm the theoretical analysis.

  17. Resistor Networks based on Symmetrical Polytopes

    Directory of Open Access Journals (Sweden)

    Jeremy Moody

    2015-03-01

    Full Text Available This paper shows how a method developed by Van Steenwijk can be generalized to calculate the resistance between any two vertices of a symmetrical polytope all of whose edges are identical resistors. The method is applied to a number of cases that have not been studied earlier such as the Archimedean polyhedra and their duals in three dimensions, the regular polytopes in four dimensions and the hypercube in any number of dimensions.

  18. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    Science.gov (United States)

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  19. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  20. High linearity current communicating passive mixer employing a simple resistor bias

    International Nuclear Information System (INIS)

    Liu Rongjiang; Guo Guiliang; Yan Yuepeng

    2013-01-01

    A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB. (semiconductor integrated circuits)

  1. Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

    Science.gov (United States)

    Kamata, Masahiro; Abe, Mayumi

    2012-01-01

    A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

  2. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  3. Solid-state resistor for pulsed power machines

    Science.gov (United States)

    Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas; Fowler, William E.; MacRunnels, Keven Alan; Justus, David; Stygar, William A.

    2016-12-06

    A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

  4. Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

    International Nuclear Information System (INIS)

    LaGraff, J.R.; Chan, H.; Murduck, J.M.; Hong, S.H.; Ma, Q.Y.

    1997-01-01

    A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa 2 Cu 3 O 7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20 - 140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy. copyright 1997 American Institute of Physics

  5. Adjustable thermal resistor by reversibly folding a graphene sheet.

    Science.gov (United States)

    Song, Qichen; An, Meng; Chen, Xiandong; Peng, Zhan; Zang, Jianfeng; Yang, Nuo

    2016-08-11

    Phononic (thermal) devices such as thermal diodes, thermal transistors, thermal logic gates, and thermal memories have been studied intensively. However, tunable thermal resistors have not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor based on folded graphene. Through theoretical analysis and molecular dynamics simulations, we study the phonon-folding scattering effect and the dependence of thermal resistivity on the length between two folds and the overall length. Furthermore, we discuss the possibility of realizing instantaneously adjustable thermal resistors in experiment. Our studies bring new insights into designing thermal resistors and understanding the thermal modulation of 2D materials by adjusting basic structure parameters.

  6. Studies of tantalum nitride thin film resistors

    International Nuclear Information System (INIS)

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  7. Multifractal properties of resistor diode percolation.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2002-03-01

    Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

  8. Resistor trimming geometry; past, present and future

    International Nuclear Information System (INIS)

    Alafogianni, M; Penlington, R; Birkett, M

    2016-01-01

    This paper explores the key developments in thin film resistive trimming geometry for use in the fabrication of discrete precision resistors. Firstly an introduction to the laser trimming process is given with respect to well established trim geometries such as the plunge, 'L' and serpentine cuts. The effect of these trim patterns on key electrical properties of resistance tolerance and temperature co-efficient of resistance (TCR) of the thin films is then discussed before the performance of more recent geometries such as the three-contact and random trim approaches are reviewed. In addition to the properties of the standard trim patterns, the concept of the heat affected zone (HAZ) and ablation energy and the effect of introducing a 'fine' trim in areas of low current density to improve device performance are also studied. It is shown how trimming geometry and laser parameters can be systematically controlled to produce thin film resistors of the required properties for varying applications such as high precision, long term stability and high power pulse performance

  9. Variable thermal resistor based on self-powered Peltier effect

    OpenAIRE

    Min, Gao; Yatim, N. M.

    2008-01-01

    Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported.

  10. Restrictions on modeling spin injection by resistor networks

    OpenAIRE

    Rashba, Emmanuel

    2008-01-01

    Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.

  11. Variable thermal resistor based on self-powered Peltier effect

    International Nuclear Information System (INIS)

    Min Gao; Yatim, N Md

    2008-01-01

    Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported. (fast track communication)

  12. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Fu-Peng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Un, Hio-Ieng [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Li, Yongxi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Hu, Hailiang [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yuan, Yi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yang, Bin [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Xiao, Kai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Chen, Wei [Argonne National Lab. (ANL), Lemont, IL (United States). Science Div.; Wang, Jie-Yu [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Jiang, Zuo-Quan [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Pei, Jian [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Liao, Liang-Sheng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM)

    2017-10-09

    A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.

  13. Scaling in small-world resistor networks

    International Nuclear Information System (INIS)

    Korniss, G.; Hastings, M.B.; Bassler, K.E.; Berryman, M.J.; Kozma, B.; Abbott, D.

    2006-01-01

    We study the effective resistance of small-world resistor networks. Utilizing recent analytic results for the propagator of the Edwards-Wilkinson process on small-world networks, we obtain the asymptotic behavior of the disorder-averaged two-point resistance in the large system-size limit. We find that the small-world structure suppresses large network resistances: both the average resistance and its standard deviation approaches a finite value in the large system-size limit for any non-zero density of random links. We also consider a scenario where the link conductance decays as a power of the length of the random links, l -α . In this case we find that the average effective system resistance diverges for any non-zero value of α

  14. Ultrathin microwave metamaterial absorber utilizing embedded resistors

    Science.gov (United States)

    Kim, Young Ju; Hwang, Ji Sub; Yoo, Young Joon; Khuyen, Bui Xuan; Rhee, Joo Yull; Chen, Xianfeng; Lee, YoungPak

    2017-10-01

    We numerically and experimentally studied an ultrathin and broadband perfect absorber by enhancing the bandwidth with embedded resistors into the metamaterial structure, which is easy to fabricate in order to lower the Q-factor and by using multiple resonances with the patches of different sizes. We analyze the absorption mechanism in terms of the impedance matching with the free space and through the distribution of surface current at each resonance frequency. The magnetic field, induced by the antiparallel surface currents, is formed strongly in the direction opposite to the incident electromagnetic wave, to cancel the incident wave, leading to the perfect absorption. The corresponding experimental absorption was found to be higher than 97% in 0.88-3.15 GHz. The agreement between measurement and simulation was good. The aspects of our proposed structure can be applied to future electronic devices, for example, advanced noise-suppression sheets in the microwave regime.

  15. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  16. Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

    Science.gov (United States)

    Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

    2018-04-01

    The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

  17. Materials for n-type organic electronics: synthesis and properties of fluoroarene-thiophene semiconductors

    Science.gov (United States)

    Facchetti, Antonio; Yoon, Myung-Han; Katz, Howard E.; Marks, Tobin J.

    2003-11-01

    Recent progress in the field of organic electronics is due to a fruitful combination of both innovative molecular design and promising low-cost material/device assembly. Targeting the first strategy, we present here the general synthesis of fluoroarene-containing thiophene-based semiconductors and the study of their properties with respect to the corresponding fluorine-free hole-transporting analogues. The new compounds have been characterized by elemental analysis, mass spectrometry, and 1H- and 19F NMR. The dramatic influence of fluorine substitution and molecular architecture has been investigated by solution/film optical absorption, fluorescence emission, and cyclic voltammetry. Single crystal data for all of the oligomers have been obtained and will be presented. Film microstructure and morphology of this new class of materials have been studied by XRD and SEM. Particular emphasis will be posed on the solution-processable oligomers and polymers.

  18. Conjugate acene fused buckybowls: evaluating their suitability for p-type, ambipolar and n-type air stable organic semiconductors.

    Science.gov (United States)

    Purushotham, Uppula; Sastry, G Narahari

    2013-04-14

    Elaborate and exhaustive first principles calculations were carried out to screen the novel properties of a series of acene fused buckybowls. The acene fused compounds exhibit hole transport property due to their higher electron injection and lower hole transport barrier relative to the work function potential of Au electrodes. The higher HOMO and lower LUMO energy levels suggest lower hole and electron injection barriers of F and CN substituted and boron doped bowls which indicates ambipolar property of these bowls. The dicyano substituted pentacene fused bowls show only electron transport property with lower LUMO (-4.26 eV to -4.27 eV) and higher HOMO (-5.56 eV to -5.90 eV) energy levels. High electron affinity (>2.80 eV) and low LUMO energy (semiconductors.

  19. Pinched hysteresis behavior in a PID-controlled resistor

    Directory of Open Access Journals (Sweden)

    M.A. Carrasco-Aguilar

    2018-06-01

    Full Text Available A current-controlled grounded resistor that exhibits a frequency-dependent pinched hysteresis loop is described. A mathematical model describing this behavior is derived and validated numerically, which has the form of a Proportional Integral-Derivative (PID controller. The proposed topology is build by using AD844 commercially available active device configured as second-generation current conveyor and experimental tests are compared with numerical simulations, showing a good agreement among them. Moreover, the proposed PID-controlled resistor can be reconfigured in order to be used in future applications such as programmable analog circuits. Keyword: Pinched hysteresis, Current conveyors, Nonlinear resistor, Proportional-Integral-Derivative Controller

  20. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  1. Temperature-independent resistor for microelectronic circuits

    Science.gov (United States)

    Aegerter, S.; Libby, W. F.

    1970-01-01

    Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.

  2. Studi Pengaruh Pengaman Galvanometer terhadap Keakuratan Hasil Pengukuran Resistor pada Jembatan Wheatstone Sederhana

    OpenAIRE

    Herlan, Dedeng

    2014-01-01

    Pengaman galvanometer pada penggunaan jembatan wheastone sebagai alat untuk mengukur besarkomponen resistor R dikembangkan pada penelitian ini. Pengaman galvanometer yang ditelitimemakai bahan resistor yang telah tersedia di pasaran dengan berbagai ukuran. . Berdasarkanbentuk strukturnya yang khas dari sebuah jembatan wheatstone, resistor yang digunakan sebagaipengaman galvanometer dalam penelitian ini, yaitu susunan resistor variabel R3 dan R4dengantipe L yang mengapit salah s...

  3. NuMI proton kicker extraction magnet termination resistor system

    Energy Technology Data Exchange (ETDEWEB)

    Reeves, S.R.; Jensen, C.C.; /Fermilab

    2005-05-01

    The temperature stability of the kicker magnet termination resistor assembly directly affects the field flatness and amplitude stability. Comprehensive thermal enhancements were made to the existing Main Injector resistor assembly design to satisfy NuMI performance specifications. Additionally, a fluid-processing system utilizing Fluorinert{reg_sign} FC-77 high-voltage dielectric was built to precisely control the setpoint temperature of the resistor assembly from 70 to 120F, required to maintain constant resistance during changing operational modes. The Fluorinert{reg_sign} must be continually processed to remove hazardous breakdown products caused by radiation exposure to prevent chemical attack of system components. Design details of the termination resistor assembly and Fluorinert{reg_sign} processing system are described. Early performance results will be presented.

  4. Novel charge sensitive preamplifier without high-value feedback resistor

    International Nuclear Information System (INIS)

    Xi Deming

    1992-01-01

    A novel charge sensitive preamplifier is introduced. The method of removing the high value feedback resistor, the circuit design and analysis are described. A practical circuit and its measured performances are provided

  5. A resistor interpretation of general anisotropic cardiac tissue.

    Science.gov (United States)

    Shao, Hai; Sampson, Kevin J; Pormann, John B; Rose, Donald J; Henriquez, Craig S

    2004-02-01

    This paper describes a spatial discretization scheme for partial differential equation systems that contain anisotropic diffusion. The discretization method uses unstructured finite volumes, or the boxes, that are formed as a secondary geometric structure from an underlying triangular mesh. We show how the discretization can be interpreted as a resistive circuit network, where each resistor is assigned at each edge of the triangular element. The resistor is computed as an anisotropy dependent geometric quantity of the local mesh structure. Finally, we show that under certain conditions, the discretization gives rise to negative resistors that can produce non-physical hyperpolarizations near depolarizing stimuli. We discuss how the proper choice of triangulation (anisotropic Delaunay triangulation) can ensure monotonicity (i.e. all resistors are positive).

  6. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-07-18

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  7. Free-standing silicon micro machined resistors from (110) substrate

    International Nuclear Information System (INIS)

    Bernardini, R.; Diligenti, A.; Nannini, A.; Piotto, M.

    1998-01-01

    A simple process to obtain silicon planes released from the substrate and provided with large area pads for ohmic contacts is described. Resistors 500 μm long with a 40 μm x 1 μm cross section were obtained. Resistance measurements showed that the current flows in a reduced cross section, probably owing to the presence of a superficial depletion layer. Preliminary magnetoresistance measurements are presented. Reduction of the resistor cross section can be obtained by thermal oxidation

  8. Room-temperature antiferromagnetic memory resistor.

    Science.gov (United States)

    Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

    2014-04-01

    The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

  9. Irreversible entropy model for damage diagnosis in resistors

    Energy Technology Data Exchange (ETDEWEB)

    Cuadras, Angel, E-mail: angel.cuadras@upc.edu; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos [Instrumentation, Sensor and Interfaces Group, Electronic Engineering Department, Escola d' Enginyeria de Telecomunicació i Aeronàutica de Castelldefels EETAC, Universitat Politècnica de Catalunya, Barcelona Tech (UPC), Castelldefels-Barcelona (Spain)

    2015-10-28

    We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.

  10. Irreversible entropy model for damage diagnosis in resistors

    International Nuclear Information System (INIS)

    Cuadras, Angel; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos

    2015-01-01

    We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance

  11. Improvement of Transient Stability of Power System by System Damping Series Resistor (SDSR)

    OpenAIRE

    上里, 勝実; 千住, 智信; 当銘, 秀之; 高原, 景滋; Uezato, Katsumi; Senjyu, Tomonobu; Toume, Hideyuki; Takahara, Keiji

    1990-01-01

    The system damping resistor is one of the method for improving the transient stability of power systems. The main circuit is the simple construction so that is low cost and is few abnormal surge, and is superior in ability of economy, reliability and maintenance. Conventionally, most of all system damping resistors have adopted the paralleled resistor, whereas the series resistor is used little.In this paper, we investigate the characteristics of the series resistor by comparing with the para...

  12. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  13. Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

    Science.gov (United States)

    Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

    2017-10-01

    Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

  14. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-01-01

    that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  15. The Sponge Resistor Model--A Hydrodynamic Analog to Illustrate Ohm's Law, the Resistor Equation R=?l/A, and Resistors in Series and Parallel

    Science.gov (United States)

    Pfister, Hans

    2014-01-01

    Physics students encountering electric circuits for the first time often ask why adding more resistors to a circuit sometimes increases and sometimes decreases the resulting total resistance. It appears that these students have an inadequate understanding of current flow and resistance. Students who do not adopt a model of current, voltage, and…

  16. Apparatus for testing semiconductor devices and capacitors

    International Nuclear Information System (INIS)

    York, R.A.

    1984-01-01

    An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

  17. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.; Alshareef, Husam N.

    2013-01-01

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

  18. Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

    1989-01-01

    A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

  19. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  20. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  1. TI--CR--AL--O thin film resistors

    Science.gov (United States)

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  2. Surface scattering mechanisms of tantalum nitride thin film resistor.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

  3. Scaling law of resistance fluctuations in stationary random resistor networks

    Science.gov (United States)

    Pennetta; Trefan; Reggiani

    2000-12-11

    In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

  4. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  5. Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Chen Hai-Feng; Guo Li-Xin; Zheng Pu-Yang; Dong Zhao; Zhang Qian

    2015-01-01

    Drain-modulated generation current I DMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of I DMG ascribes to the change of the Si surface potential φ s . This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as V D increases. The reason for this unconformity is that the drain-to-gate voltage V DG lessens φ s around the drain corner and controls the falling edge of the I DMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the I DMG falling edge is set up in which I DMG has an exponential attenuation relation with V DG . Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 mV = 3kT/q. This result fully shows the accuracy of the above mechanism. (paper)

  6. Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

    Science.gov (United States)

    Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

    2012-11-26

    The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

  7. Manifestation of surface phonons in far infrared reflectivity of diamond-type semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Sanchez, F.L.; Perez-Rodriguez, F. [Instituto de Fisica, Universidad Autonoma de Puebla, Apdo. Post. J-48, Puebla, Pue. 72570 (Mexico)

    2004-11-01

    The coupling of surface phonons with light at (001) surfaces of diamond-structure crystals and its manifestation in far-infrared anisotropy spectra are theoretically studied. We apply the adiabatic bond charge model to describe short-range mechanical interactions together with long-range Coulomb forces and radiation fields, and we solve the corresponding system of coupled equations for the electromagnetic field and the lattice vibrations. We calculate far-infrared normal reflectance spectra of (001) surfaces of semi-infinite diamond-type crystals. In particular, we analyse reflectance spectra for the Si(001) (2 x 1) surface, which exhibit a resonance structure associated with the excitation of surface phonon modes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Ruthenium oxide resistors as sensitive elements of composite bolometers

    International Nuclear Information System (INIS)

    Benassai, M.; Gallinaro, G.; Gatti, F.; Siri, S.; Vitale, S.

    1988-01-01

    Bolometers for particle detection made with Ruthenium oxide thermistors could be produced by means of a simple technique on a variety of different materials as substrata. Preliminary results on alpha particle detection with devices realized using commercial RuO 2 thick film resistor (Tfr) are considered positive for devices operating between. 3 and .1 k and determined us to pursue further the idea. Ruthenium oxide resistors on sapphire at the moment are being prepared. The behaviour of these devices st temperatures lower than .1 k has to be investigated in more detail

  9. A dc carpet cloak based on resistor networks.

    Science.gov (United States)

    Mei, Zhong Lei; Liu, Yu Sha; Yang, Fan; Cui, Tie Jun

    2012-11-05

    We propose, design, and implement a two-dimensional dc carpet cloak for steady electric field using the transformation optics (TO) method. Based on the circuit theory, we introduce a resistor network to mimic the resulting anisotropic conducting medium. The experimental prototype is fabricated using metal film resistors, and the measured results agree perfectly well with theoretical predictions. This study gives the first experimental verification of a dc carpet cloak, which expands the application of TO theory, and has potential applications in related areas.

  10. Electrochemical Migration on Electronic Chip Resistors in Chloride Environments

    DEFF Research Database (Denmark)

    Minzari, Daniel; Jellesen, Morten Stendahl; Møller, Per

    2009-01-01

    Electrochemical migration behavior of end terminals on ceramic chip resistors (CCRs) was studied using a novel experimental setup in varying sodium chloride concentrations from 0 to 1000 ppm. The chip resistor used for the investigation was 10-kΩ CCR size 0805 with end terminals made of 97Sn3Pb...... rate of the Sn and stability of Sn ions in the solution layer play a significant role in the formation of dendrites, which is controlled by chloride concentration and potential bias. Morphology, composition, and resistance of the dendrites were dependent on chloride concentration and potential....

  11. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  12. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  13. Switching phase states in two van der Pol oscillators coupled by ttochastically time-varying resistor

    OpenAIRE

    Uwate, Y; Nishio, Y; Stoop, R

    2009-01-01

    We explore the synchronization and switching behavior of a system of two identical van der Pol oscillators coupled by a stochastically timevarying resistor. Triggered by the time-varying resistor, the system of oscillators switches between synchronized and anti-synchronized behavior. We find that the preference of the synchronized/antisynchronized state is determined by the ratio of the probabilities of the two resistor states. The length of the phases of maintained resistor states, however, ...

  14. Frequency dependence of the active impedance component of silicon thin-film resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1987-01-01

    A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

  15. High-performance n-type organic semiconductors: incorporating specific electron-withdrawing motifs to achieve tight molecular stacking and optimized energy levels.

    Science.gov (United States)

    Yun, Sun Woo; Kim, Jong H; Shin, Seunghoon; Yang, Hoichang; An, Byeong-Kwan; Yang, Lin; Park, Soo Young

    2012-02-14

    Novel π–conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic field-effect transistor (OFET) properties with electron mobilities as high as 2.14 cm2 V−1s−1 and on-off current ratios Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Continuously forced ballast resistor model for superconducting hot spots

    International Nuclear Information System (INIS)

    Ausloos, M.

    1981-01-01

    To neglect the Thomson effect in the ballast resistor theory is an incorrect assumption since it measures the velocity of the thermal grain boundaries. Due to the constant rate of heating or cooling, large oscillations are predicted in dR/dT near Tsub(c). (orig.)

  17. Air-cooled fast discharge resistors for ITER magnets

    International Nuclear Information System (INIS)

    Tanchuk, Victor; Grigoriev, Sergey; Lokiev, Vladimir; Roshal, Alexander; Song, Inho; Buzykin, Oleg

    2011-01-01

    The ITER superconducting magnets will store up to 50 GJ of magnetic energy per operation cycle. In case of coil quench the energy stored in the coils must be extracted rapidly with a time constant from 7.5 to 14 s. It will be achieved by fast discharge resistors (FDR) normally bridged by circuit breakers and inserted in series with the superconducting coils. The fast discharge of the coils results practically in adiabatic heating of the resistive elements up to 200-300 deg. C. The resistors need to be cooled to the initial temperature over 6-8 h. Natural air circulation is proposed as a cooling method. In order to simulate the temperature response of the resistors to energy released in the resistive plates and to demonstrate their cooling capability within the required time by natural air circulation the numerical model of the resistor cooling circuit has been developed. As the calculations have shown, the developed FDR cooling system based on cooling by natural air circulation is capable of providing the required temperature operation regime of FDRs, but the supply channels are to be optimized so that the cooling time does not exceed the permissible one.

  18. 30 CFR 57.12023 - Guarding electrical connections and resistor grids.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... NONMETAL MINES Electricity Surface and Underground § 57.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be...

  19. 30 CFR 56.12023 - Guarding electrical connections and resistor grids.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... MINES Electricity § 56.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be guarded, unless protection...

  20. 30 CFR 77.801-1 - Grounding resistors; continuous current rating.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors; continuous current rating... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.801-1 Grounding resistors; continuous current rating. The ground fault current rating of grounding resistors shall meet the “extended...

  1. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... resistor; continuous current rating. The ground fault current rating of grounding resistors shall meet the...

  2. Development of a miniaturized watch-type dosimeter using a silicon printed-circuit board

    International Nuclear Information System (INIS)

    Ishikura, Takeshi; Sakamaki, Tsuyoshi; Matsumoto, Iwao; Aoyama, Kei; Nakamura, Takashi

    2008-01-01

    The electrical personal dosimeter using a silicon semiconductor sensor has the advantage of real time response and alarm function, which can prevent unexpected over-exposure. We tried to develop a miniaturized watch-type dosimeter by incorporating the silicon semiconductor sensor on a silicon printed-circuit board. Thin film resistors, capacitors and wiring patterns are formed on a downsized printed-circuit board. Electronic parts including transistors are mounted by soldering on the silicon printed-circuit board. The dosimeter is further miniaturized by downsizing the amplifier circuit, the semiconductor radiation sensor, the power supply circuit, setting parts and alarm part. The performance of the developed dosimeter was evaluated with respect to the gamma-ray spectra, angular dependence and linearity to dose equivalent rate, and it was confirmed that this dosimeter has the performance equivalent to a commercially available electrical personal dosimeter. (author)

  3. Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

    International Nuclear Information System (INIS)

    Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

    2001-01-01

    High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

  4. Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

    Directory of Open Access Journals (Sweden)

    Philippe Leduc

    2002-06-01

    Full Text Available Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate". The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

  5. Semiconducting oxide gas-sensitive resistors

    International Nuclear Information System (INIS)

    Dusastre, V.J.

    1998-01-01

    The overall aim of this thesis is to describe the gas sensing behaviour of a wide range of metal oxide semiconductors which exhibit tremendous changes in their electrical resistance at high temperatures (typically > 300 deg. C) upon exposure to traces (ppm) of reactive gases present in the air. The effects of surface segregation in antimony-doped tin dioxide (Sn 1-y Sb y O 2 ) on both the electrical response to water vapour and the catalytic combustion of methane in the presence of water vapour were demonstrated. Effects of microstructure, and especially particle size, on the behaviour (sensitivity and selectivity) of these compounds to carbon monoxide and methane were also demonstrated. A change in behaviour correlating with the Debye length was shown. Theoretical calculation methods were used to model surface segregation and surface defects. Antimony segregates as Sb 3+ and the complex (Sn(II).V o ) is a stable surface species. A model for gas response and surface reaction involving this complex is proposed. The properties of solid solution series prepared by systematic cation substitution as a way of understanding the gas response mechanism linked to the surface chemistry has been examined in (CrNbO 4 )x(Sn 1-y Sb y O 2 ) 1-x , Ti x (Sn 1-y Sb y ) 1-x O 2 , and (MWO 4 )x([Sn-Ti]O 2 ) 1x [with M: Mn, Fe, Co, Ni, Cu, Zn]. Effects of stoichiometry, microstructure, combustion gradient and surface segregation on gas (water, carbon monoxide, methane, propane and ammonia) sensitivity and selectivity have been observed and discussed. (author)

  6. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  7. 2,6-Bis(benzo[b]thiophen-2-yl-3,7-dipentadecyltetrathienoacene (DBT-TTAR2 as an Alternative of Highly Soluble p-type Organic Semiconductor for Organic Thin Film Transistor (OTFT Application

    Directory of Open Access Journals (Sweden)

    Mery B. Supriadi

    2013-03-01

    Full Text Available A new compound of organic semiconductor based on tetrathienoacene (TTA derivatives, DBT-TTAR2 was synthesized and characterized. The corporation of dibenzo[b,d]thiophene (DBT group and alkyl substituent in both ends of TTA core have a significant effect on their π-π molecular conjugation length, energy gaps value and solubility properties. DBT-TTAR2 is fabricated as p-type organic semiconductor of organic thin film transistor (OTFT by solution process at Industrial Technology Research Institute, Taiwan. A good optical, electrochemical, and thermal properties of DBT-TTAR2 showed that its exhibits a better performance as highly soluble p-type organic semiconductor.

  8. Alternative power supply and dump resistor connections for similar, mutually coupled, superconducting coils

    International Nuclear Information System (INIS)

    Owen, E.W.; Shimer, W.; Wang, S.T.

    1983-01-01

    Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains ''coupling'' resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

  9. Alternative power supply and dump resistor connections for similar, mutally coupled, superconducting coils

    International Nuclear Information System (INIS)

    Owen, E.W.; Shimer, D.W.; Wang, S.T.

    1983-01-01

    Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

  10. Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

    International Nuclear Information System (INIS)

    Lotkhov, Sergey V

    2013-01-01

    In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

  11. Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-05-07

    Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

  12. SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

    Directory of Open Access Journals (Sweden)

    Euclides J. Velazco Rivero

    2018-04-01

    Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature (θ

  13. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  14. Infant breathing rate counter based on variable resistor for pneumonia

    Science.gov (United States)

    Sakti, Novi Angga; Hardiyanto, Ardy Dwi; La Febry Andira R., C.; Camelya, Kesa; Widiyanti, Prihartini

    2016-03-01

    Pneumonia is one of the leading causes of death in new born baby in Indonesia. According to WHO in 2002, breathing rate is very important index to be the symptom of pneumonia. In the Community Health Center, the nurses count with a stopwatch for exactly one minute. Miscalculation in Community Health Center occurs because of long time concentration and focus on two object at once. This calculation errors can cause the baby who should be admitted to the hospital only be attended at home. Therefore, an accurate breathing rate counter at Community Health Center level is necessary. In this work, resistance change of variable resistor is made to be breathing rate counter. Resistance change in voltage divider can produce voltage change. If the variable resistance moves periodically, the voltage will change periodically too. The voltage change counted by software in the microcontroller. For the every mm shift at the variable resistor produce average 0.96 voltage change. The software can count the number of wave generated by shifting resistor.

  15. Design of a Compact Dump Resistor System for LCD Magnet

    CERN Document Server

    Gaddi, A

    2010-01-01

    In this technical note we suggest a possible solution for the choice of the detector magnet dump resistor. The push-pull scenario for Linear Collider Detectors imposes new solutions for magnet powering and protection lines, else than what developed for LHC detectors. The magnet dump resistor is the protecting equipment that has the function of extracting a significant amount of magnetic stored energy, from the coil winding to a dump. The LCD magnet has to move with the experiment from the garage to the beam position, so it has to be compact and reliable at the same time. We make here a proposal for a passive water-cooled dumper, we calculate the minimum amount of water required, the resistor hot-spot temperature, the overall mechanical design. The electrical part is not covered by this note, as it can be assumed that the solutions adopted by LHC detector magnets, in terms of quench instrumentation, energy extraction and maximum voltage, are not significantly affected by the push-pull scenario.

  16. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  17. Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

    International Nuclear Information System (INIS)

    Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

    2014-01-01

    Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al 2 O 3 , which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60 Co and 137 Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between circuit board and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient. - Highlights: • Impact of a mobile phone mode (switched on/off) on absorbed dose by resistors was showed. • The influence of the temperature during irradiation on absorbed dose was measured. • Dose distribution inside of a mobile phone was performed. • Fading factor of resistors was calculated

  18. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    International Nuclear Information System (INIS)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

    2014-01-01

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic

  19. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

    2014-04-14

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

  20. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  1. Field effect of screened charges: electrical detection of peptides and proteins by a thin-film resistor.

    Science.gov (United States)

    Lud, Simon Q; Nikolaides, Michael G; Haase, Ilka; Fischer, Markus; Bausch, Andreas R

    2006-02-13

    For many biotechnological applications the label-free detection of biomolecular interactions is becoming of outstanding importance. In this Article we report the direct electrical detection of small peptides and proteins by their intrinsic charges using a biofunctionalized thin-film resistor. The label-free selective and quantitative detection of small peptides and proteins is achieved using hydrophobized silicon-on-insulator (SOI) substrates functionalized with lipid membranes that incorporate metal-chelating lipids. The response of the nanometer-thin conducting silicon film to electrolyte screening effects is taken into account to determine quantitatively the charges of peptides. It is even possible to detect peptides with a single charge and to distinguish single charge variations of the analytes even in physiological electrolyte solutions. As the device is based on standard semiconductor technologies, parallelization and miniaturization of the SOI-based biosensor is achievable by standard CMOS technologies and thus a promising basis for high-throughput screening or biotechnological applications.

  2. Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2006-01-01

    Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these

  3. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  4. Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

    Science.gov (United States)

    Chang, Kuo-Tsai

    2007-01-01

    This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

  5. Evaluation of Pressure Generated by Resistors From Different Positive Expiratory Pressure Devices.

    Science.gov (United States)

    Fagevik Olsén, Monika; Carlsson, Maria; Olsén, Erik; Westerdahl, Elisabeth

    2015-10-01

    Breathing exercises with positive expiratory pressure (PEP) are used to improve pulmonary function and airway clearance. Different PEP devices are available, but there have been no studies that describe the pressure generated by different resistors. The purpose of this study was to compare pressures generated from the proprietary resistor components of 4 commercial flow-dependent PEP valves with all other parameters kept constant. Resistors from 4 flow-regulated PEP devices (Pep/Rmt system, Wellspect HealthCare; Pipe P breathing exerciser, Koo Medical Equipment; Mini-PEP, Philips Respironics [including resistors by Rüsch]; and 15-mm endo-adapter, VBM Medizintechnik) were tested randomly by a blinded tester at constant flows of 10 and 18 L/min from an external gas system. All resistors were tested 3 times. Resistors with a similar diameter produced statistically significant different pressures at the same flow. The differences were smaller when the flow was 10 L/min compared with 18 L/min. The differences were also smaller when the diameter of the resistor was increased. The pressures produced by the 4 resistors of the same size were all significantly different when measuring 1.5- and 2.0-mm resistors at a flow of 10 L/min and 2.0-mm resistors at a flow of 18 L/min (P < .001). There were no significant differences between any of the resistors when testing sizes of 4.5 and 5.0 mm at either flow. The Mini-PEP and adapter resistors gave the highest pressures. Pressures generated by the different proprietary resistor components of 4 commercial PEP devices were not comparable, even though the diameter of the resistors is reported to be the same. The pressures generated were significantly different, particularly when using small-diameter resistors at a high flow. Therefore, the resistors may not be interchangeable. This is important information for clinicians, particularly when considering PEP for patients who do not tolerate higher pressures. Copyright © 2015 by

  6. Contact materials for thermostable resistors on the base of Ni-Re alloy

    International Nuclear Information System (INIS)

    Yusipov, H.Yu.; Glasman, L.I.; Arskaya, E.P.; Lazarev, Eh.M.; Korotkov, N.A.

    1979-01-01

    Given are the electron diffraction analysis results and the operational characteristics of the contact materials, used in the heat-resistant thin-filmed resistors (TFR), made on the basis of the Ni-Re system alloy. The results are compared with the pure nickel. Operational tests of the thin-filmed resistors, having (NR10-VP) alloy contacts, showed that the departure of the resistors nominals is almost twice as small as that for the resistors, having pure nickel contacts. The use of this alloy permits to increase the thermal stability and durability of the TFRs, if they are used under extreme conditions

  7. Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

    Science.gov (United States)

    Birkett, Martin; Penlington, Roger

    2012-08-01

    This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

  8. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  9. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  10. An optimized resistor pattern for temperature gradient control in microfluidics

    Science.gov (United States)

    Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

    2009-06-01

    In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117-23, Erickson et al 2003 Lab Chip 3 141-9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors.

  11. An optimized resistor pattern for temperature gradient control in microfluidics

    International Nuclear Information System (INIS)

    Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

    2009-01-01

    In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117–23, Erickson et al 2003 Lab Chip 3 141–9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors

  12. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  13. Conceptual design of dump resistor for superconducting CS of SST-1

    International Nuclear Information System (INIS)

    Roy, Swati; Pradhan, Subrata; Panchal, Arun

    2015-01-01

    During the upgradation of SST-1, the resistive central solenoid (CS) coil has been planned to be replaced with Nb 3 Sn based superconducting coil. The superconducting CS will store upto 3.5MJ of magnetic energy per operation cycle with operating current upto 14kA. In case of coil quench, the energy stored in the coils is to be extracted rapidly with a time constant of 1.5s. This will be achieved by inserting a 20m Ohm dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a vital part of the superconducting CS quench protection system, a conceptual design of the 20m Ohm dump resistor has been proposed. In this paper, the required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented. Natural air circulation is proposed as cooling method for this dump resistor. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the shape of meander to minimize the stray inductance and increase the surface area for cooling. The entire dump resistor will be an array of such grids connected in series and parallel to meet electrical as well as thermal parameters. The maximum temperature of the proposed dump resistor is upto 350 °C during dump 3.5MJ energy. The proposed design permits indigenous fabrication of the dump resistor using commercially available welding techniques. (author)

  14. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  15. Elucidation of the structure-property relationship of p-type organic semiconductors through rapid library construction via a one-pot, Suzuki-Miyaura coupling reaction.

    Science.gov (United States)

    Fuse, Shinichiro; Matsumura, Keisuke; Wakamiya, Atsushi; Masui, Hisashi; Tanaka, Hiroshi; Yoshikawa, Susumu; Takahashi, Takashi

    2014-09-08

    The elucidation of the structure-property relationship is an important issue in the development of organic electronics. Combinatorial synthesis and the evaluation of systematically modified compounds is a powerful tool in the work of elucidating structure-property relationships. In this manuscript, D-π-A structure, 32 p-type organic semiconductors were rapidly synthesized via a one-pot, Suzuki-Miyaura coupling with subsequent Knoevenagel condensation. Evaluation of the solubility and photovoltaic properties of the prepared compounds revealed that the measured solubility was strongly correlated with the solubility parameter (SP), as reported by Fedors. In addition, the SPs were correlated with the Jsc of thin-film organic solar cells prepared using synthesized compounds. Among the evaluated photovoltaic properties of the solar cells, Jsc and Voc had strong correlations with the photoconversion efficiency (PCE).

  16. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  17. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  18. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  19. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    Science.gov (United States)

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  1. A novel charge sensitive preamplifier without the feedback resistor

    International Nuclear Information System (INIS)

    Bertuccio, G.

    1992-01-01

    A novel charge sensitive preamplifier which has no resistor in parallel with the feedback capacitor is presented. No external device or circuit is required to discharge the feedback capacitor. The detector leakage and signal current flows away through the gate of the first JFET which works with its gate to source junction slightly forward biased. The DC stabilization of the preamplifier is accomplished by an additional feedback loop, which permits to equalize the current flowing through the forward baised gate to source junction and the current coming from the detector. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using an input JFET with a transconductance to gate capacitance ratio of 4 mS/5.4 pF

  2. "Weak quantum chaos" and its resistor network modeling.

    Science.gov (United States)

    Stotland, Alexander; Pecora, Louis M; Cohen, Doron

    2011-06-01

    Weakly chaotic or weakly interacting systems have a wide regime where the common random matrix theory modeling does not apply. As an example we consider cold atoms in a nearly integrable optical billiard with a displaceable wall (piston). The motion is completely chaotic but with a small Lyapunov exponent. The Hamiltonian matrix does not look like one taken from a Gaussian ensemble, but rather it is very sparse and textured. This can be characterized by parameters s and g which reflect the percentage of large elements and their connectivity, respectively. For g we use a resistor network calculation that has a direct relation to the semilinear response characteristics of the system, hence leading to a prediction regarding the energy absorption rate of cold atoms in optical billiards with vibrating walls.

  3. Minimum spanning trees and random resistor networks in d dimensions.

    Science.gov (United States)

    Read, N

    2005-09-01

    We consider minimum-cost spanning trees, both in lattice and Euclidean models, in d dimensions. For the cost of the optimum tree in a box of size L , we show that there is a correction of order L(theta) , where theta or =1 . The arguments all rely on the close relation of Kruskal's greedy algorithm for the minimum spanning tree, percolation, and (for some arguments) random resistor networks. The scaling of the entropy and free energy at small nonzero T , and hence of the number of near-optimal solutions, is also discussed. We suggest that the Steiner tree problem is in the same universality class as the minimum spanning tree in all dimensions, as is the traveling salesman problem in two dimensions. Hence all will have the same value of theta=-3/4 in two dimensions.

  4. Carbon resistor pressure gauge calibration at low stresses

    International Nuclear Information System (INIS)

    Cunningham, Bruce; Vandersall, Kevin S.; Niles, Angela M.; Greenwood, Daniel W.; Garcia, Frank; Forbes, Jerry W.; Wilson, William H.

    2002-01-01

    The 470 Ohm carbon resistor gauge has been used in the stress range up to 4-5 GPa for highly heterogeneous materials and/or divergent flow experiments. The attractiveness of the gauge is its rugged nature, simple construction, low cost, reproducibility, and survivability in dynamic events. Gauge drawbacks are the long time response to pressure equilibration and gauge resistance hysteresis. In the regime below 0.4 GPa, gauge calibration has been extrapolated. Because of the need for calibration data within this low stress regime, calibration experiments were performed using a split-Hopkinson bar, drop tower apparatus, and gas pressure chamber. Since the performance of the gauge at elevated temperatures is a concern, the change in resistance due to heating at atmospheric pressure was also investigated. Details of the various calibration arrangements and the results are discussed and compared to a calibration curve fit to previously published calibration data

  5. A non-destructive crossbar architecture of multi-level memory-based resistor

    Science.gov (United States)

    Sahebkarkhorasani, Seyedmorteza

    Nowadays, researchers are trying to shrink the memory cell in order to increase the capacity of the memory system and reduce the hardware costs. In recent years, there has been a revolution in electronics by using fundamentals of physics to build a new memory for computer application in order to increase the capacity and decrease the power consumption. Increasing the capacity of the memory causes a growth in the chip area. From 1971 to 2012 semiconductor manufacturing process improved from 6mum to 22 mum. In May 2008, S.Williams stated that "it is time to stop shrinking". In his paper, he declared that the process of shrinking memory element has recently become very slow and it is time to use another alternative in order to create memory elements [9]. In this project, we present a new design of a memory array using the new element named Memristor [3]. Memristor is a two-terminal passive electrical element that relates the charge and magnetic flux to each other. The device remained unknown since 1971 when it was discovered by Chua and introduced as the fourth fundamental passive element like capacitor, inductor and resistor [3]. Memristor has a dynamic resistance and it can retain its previous value even after disconnecting the power supply. Due to this interesting behavior of the Memristor, it can be a good replacement for all of the Non-Volatile Memories (NVMs) in the near future. Combination of this newly introduced element with the nanowire crossbar architecture would be a great structure which is called Crossbar Memristor. Some frameworks have recently been introduced in literature that utilized Memristor crossbar array, but there are many challenges to implement the Memristor crossbar array due to fabrication and device limitations. In this work, we proposed a simple design of Memristor crossbar array architecture which uses input feedback in order to preserve its data after each read operation.

  6. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  7. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  8. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  9. Recursion-transform method for computing resistance of the complex resistor network with three arbitrary boundaries.

    Science.gov (United States)

    Tan, Zhi-Zhong

    2015-05-01

    We develop a general recursion-transform (R-T) method for a two-dimensional resistor network with a zero resistor boundary. As applications of the R-T method, we consider a significant example to illuminate the usefulness for calculating resistance of a rectangular m×n resistor network with a null resistor and three arbitrary boundaries, a problem never solved before, since Green's function techniques and Laplacian matrix approaches are invalid in this case. Looking for the exact calculation of the resistance of a binary resistor network is important but difficult in the case of an arbitrary boundary since the boundary is like a wall or trap which affects the behavior of finite network. In this paper we obtain several general formulas of resistance between any two nodes in a nonregular m×n resistor network in both finite and infinite cases. In particular, 12 special cases are given by reducing one of the general formulas to understand its applications and meanings, and an integral identity is found when we compare the equivalent resistance of two different structures of the same problem in a resistor network.

  10. Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

    International Nuclear Information System (INIS)

    Pike, G.E.; Seager, C.H.

    1977-01-01

    This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

  11. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    International Nuclear Information System (INIS)

    Pandey, R.K.

    2008-01-01

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

  12. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  13. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  14. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  15. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  16. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

    2016-01-01

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  17. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  18. Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

    International Nuclear Information System (INIS)

    Mekhtiyev, M.A.; Kalina, V.A.

    1980-01-01

    The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

  19. A low-cost DAC BIST structure using a resistor loop.

    Directory of Open Access Journals (Sweden)

    Jaewon Jang

    Full Text Available This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter. Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

  20. Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

    2005-01-01

    There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area of innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive high energy resistor. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-inductance, high temperature, high power density and high energy density resistors. The bulk resistor approach offers high reliability through better mechanical properties and simplicity of construction

  1. A low-cost DAC BIST structure using a resistor loop.

    Science.gov (United States)

    Jang, Jaewon; Kim, Heetae; Kang, Sungho

    2017-01-01

    This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test) structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter). Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

  2. Improving the transient response of a bolt-clamped Langevin transducer using a parallel resistor.

    Science.gov (United States)

    Chang, Kuo Tsi

    2003-08-01

    This paper suggests a parallel resistor to reduce DC time constant and DC response time of the transient response, induced immediately after an AC voltage connected to a bolt-clamped Langevin transducer (BLT) is switched off. An equivalent circuit is first expressed. Then, an open-circuit transient response at the terminals induced by initial states is derived and measured, and thus parameters for losses of the BLT device are estimated by DC and AC time constants of the transient response. Moreover, a driving and measuring system is designed to determine transient response and steady-state responses of the BLT device, and a parallel resistor is connected to the BLT device to reduce the DC time constant. Experimental results indicate that the DC time constant greatly exceeds the AC time constant without the parallel resistor, and greatly decreases from 42 to 1 ms by a 100-kOmega parallel resistor.

  3. A new method of removing the high value feedback resistor in the charge sensitive preamplifier

    International Nuclear Information System (INIS)

    Xi Deming

    1993-01-01

    A new method of removing the high value feedback resistor in the charge sensitive preamplifier is introduced. The circuit analysis of this novel design is described and the measured performances of a practical circuit are provided

  4. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Diagnosis of the gastric cancer by radionuclides and their labels, using catheter-type semiconductor radiation detector (CASRAD)

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Iio, M; Sugita, T

    1980-08-01

    A new method of differential diagnosis of gastric cancer was reported. After intravenous /sup 32/P administration, lesions were counted by a small catheter-type radiation detector system under gastrofiberscopic direct vision control. Optimum counting time was examined in man and it was found to be between 20 to 50 hours after intravenous administration of /sup 32/P. With the currently available technology of miniature detectors, the ..beta..-emitting carcinophilic agent was still found to be the agent of choice to this end, since ..gamma..-emitting carcinophilic agents cannot provide data originated only from the gastric mucosa in question.

  7. Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

    Science.gov (United States)

    Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

    2007-01-01

    We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

  8. Fast detoxication of 2-chloro ethyl ethyl sulfide by p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3-based supports

    International Nuclear Information System (INIS)

    Ma, Meng-Wei; Kuo, Dong-Hau

    2016-01-01

    Highlights: • Detoxication of CWA surrogate of 2-chloro ethyl ethyl sulfide is investigated. • A small amount of Ag_2O on Al_2O_3-base support is sufficient to degrade 2-CEES. • Detoxication conversion >82% in 15 min is achieved for >2.5% Ag_2O/Na_2SiO_3/Al_2O_3. • Na_2SiO_3 modified Al_2O_3 to have the valley-like line pattern for depositing Ag_2O. • 2-CEES oxidation is initiated from the dominant electronic holes in p-type Ag_2O. - Abstract: p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3 or Na_2SiO_3/Al_2O_3 powders used for detoxicating the surrogate of sulfur mustard of 2-chloro ethyl ethyl sulfide (C_2H_5SCH_2CH_2Cl, 2-CEES) were investigated. Different amounts of Ag_2O and Na_2SiO_3 on catalyst supports were evaluated. Gas chromatography with a pulsed flame photometric detector (GC–PFPD) and gas chromatography coupled with a mass spectroscopy (GC–MS) were used to monitor and identify the catalytic reactions, together with reaction products analysis. The GC analyses showed that the decontamination of 2-CEES in isopropanol solvent for 15 min was above 82% efficiency for the 0.5% Na_2SiO_3/Al_2O_3 support deposited with a Ag_2O content above 2.5%. 2-(ethylthio)ethanol and 2-(ethylthio)ethanoic acid were identified as the major products after catalytic reactions. The electronic holes dominating in p-type Ag_2O is proposed to provide the key component and to initiate the catalytic reactions. The electronic hole-based detoxication mechanism is proposed.

  9. Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

    Science.gov (United States)

    Sun, Yonghai; Yeow, John T W; Jaffray, David A

    2013-10-25

    A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. [CH(3)(CH(2))(11)NH(3)]SnI(3): a hybrid semiconductor with MoO(3)-type tin(II) iodide layers.

    Science.gov (United States)

    Xu, Zhengtao; Mitzi, David B

    2003-10-20

    The organic-inorganic hybrid [CH(3)(CH(2))(11)NH(3)]SnI(3) presents a lamellar structure with a Sn-I framework isotypic to that of MoO(3). The SnI(3)(-) layer consists of edge and corner-sharing SnI(6) octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3.62 A), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI(4)(2)(-)-based perovskite semiconductors, such as [CH(3)(CH(2))(11)NH(3)](2)SnI(4), with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

  11. Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

    Science.gov (United States)

    Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

    2015-09-21

    A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors.

  12. Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

    Science.gov (United States)

    Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

    2017-03-22

    A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

  13. The diagnosis of the gastric cancer using catheter-type semiconductor radiation detector. Comparison of diagnostic values of. beta. -emitting radionuclide label with. gamma. -emitting label

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R; Iwase, T [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Sugita, T; Iio, M

    1975-06-01

    The diagnostic usefulness of /sup 32/P-phosphate for human gastric cancer, using a catheter-type semiconductor radiation detector (CASRAD) combined with gastrofiberscope technique, has already been reported by the authors. They have in addition used sup(99m)Tc-bleomycin, sup(99m)Tc-tetracycline in the diagnosis of experimental rabbit gastric cancer, too. In the present study, further refinement of the technique for the ..beta..-ray labeled substance (/sup 32/P-phosphate) for detection of the gastric cancer was compared with that of ..gamma..-ray labeled substance (sup(99m)Tc-tetracycline). A more correct diagnosis of the gastric cancer by in vivo measurement of beta activity could be obtained, when the collimater, made of stainless steel, was attached to the top of the detector. In this way contribution to the count from the adjacent tissues or organs could be eliminated. They were unable to produce an effective and useful collimater for ..gamma..-ray labeled substance which could to be used safely in vivo. Because of the unsatisfactory collimater, radioactivities of the adjacent organs caused on increase in the radioactivity of the background. Therefore inspite of the recent introduction of various sup(99m)Tc-tumor agents, these labels were not applicable to the CASRAD method. For such a small detector system, ..beta..-labels, represented by /sup 32/P-phosphate, was still prefererable to ..gamma..-labels.

  14. Laser-induced removal of a dye C.I. Acid Red 87 using n-type WO{sub 3} semiconductor catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Qamar, M. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Hayat, K. [Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Yamani, Z.H. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Al-Hooshani, K. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2009-10-30

    Water contamination by organic substances such as dyes is of great concern worldwide due to their utilization in many industrial processes and environmental concerns. To cater the needs for waste water treatment polluted with organic dyes, laser-induced photocatalytic process was investigated for removal of a dye derivative namely Acid Red 87 using n-type WO{sub 3} semiconductor catalyst. The degradation was investigated in aqueous suspensions of tungsten oxide under different experimental conditions using laser instead of conventional UV lamp as an irradiation source. The degradation process was monitored by measuring the change in dye concentration as a function of laser irradiation time by employing UV spectroscopic analysis. The degradation of dye was studied by varying different parameters such as laser energy, reaction pH, substrate concentration, catalyst concentration, and in the presence of electron acceptors such as hydrogen peroxide (H{sub 2}O{sub 2}), and potassium bromate (KBrO{sub 3}). The degradation rates were found to be strongly dependent on all the above-mentioned parameters. Our experimental results revealed that the dye degradation process was very fast (within few minutes) under laser irradiation as compared to conventional setups using broad spectral lamps (hours or days) and this laser-induced photocatalytic degradation method could be an effective means to eliminate the pollutants present in liquid phase. The experience gained through this study could be beneficial for treatment of waste water contaminated with organic dyes and other organic pollutants.

  15. Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

    Science.gov (United States)

    Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

    2007-10-01

    In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

  16. Automated crack detection in conductive smart-concrete structures using a resistor mesh model

    Science.gov (United States)

    Downey, Austin; D'Alessandro, Antonella; Ubertini, Filippo; Laflamme, Simon

    2018-03-01

    Various nondestructive evaluation techniques are currently used to automatically detect and monitor cracks in concrete infrastructure. However, these methods often lack the scalability and cost-effectiveness over large geometries. A solution is the use of self-sensing carbon-doped cementitious materials. These self-sensing materials are capable of providing a measurable change in electrical output that can be related to their damage state. Previous work by the authors showed that a resistor mesh model could be used to track damage in structural components fabricated from electrically conductive concrete, where damage was located through the identification of high resistance value resistors in a resistor mesh model. In this work, an automated damage detection strategy that works through placing high value resistors into the previously developed resistor mesh model using a sequential Monte Carlo method is introduced. Here, high value resistors are used to mimic the internal condition of damaged cementitious specimens. The proposed automated damage detection method is experimentally validated using a 500 × 500 × 50 mm3 reinforced cement paste plate doped with multi-walled carbon nanotubes exposed to 100 identical impact tests. Results demonstrate that the proposed Monte Carlo method is capable of detecting and localizing the most prominent damage in a structure, demonstrating that automated damage detection in smart-concrete structures is a promising strategy for real-time structural health monitoring of civil infrastructure.

  17. An HIV feedback resistor: auto-regulatory circuit deactivator and noise buffer.

    Science.gov (United States)

    Weinberger, Leor S; Shenk, Thomas

    2007-01-01

    Animal viruses (e.g., lentiviruses and herpesviruses) use transcriptional positive feedback (i.e., transactivation) to regulate their gene expression. But positive-feedback circuits are inherently unstable when turned off, which presents a particular dilemma for latent viruses that lack transcriptional repressor motifs. Here we show that a dissipative feedback resistor, composed of enzymatic interconversion of the transactivator, converts transactivation circuits into excitable systems that generate transient pulses of expression, which decay to zero. We use HIV-1 as a model system and analyze single-cell expression kinetics to explore whether the HIV-1 transactivator of transcription (Tat) uses a resistor to shut off transactivation. The Tat feedback circuit was found to lack bi-stability and Tat self-cooperativity but exhibited a pulse of activity upon transactivation, all in agreement with the feedback resistor model. Guided by a mathematical model, biochemical and genetic perturbation of the suspected Tat feedback resistor altered the circuit's stability and reduced susceptibility to molecular noise, in agreement with model predictions. We propose that the feedback resistor is a necessary, but possibly not sufficient, condition for turning off noisy transactivation circuits lacking a repressor motif (e.g., HIV-1 Tat). Feedback resistors may be a paradigm for examining other auto-regulatory circuits and may inform upon how viral latency is established, maintained, and broken.

  18. Physical effects of DCNQI derivatives doping as an N type organic semiconductor in organic photovoltaic cell performance.

    Science.gov (United States)

    Lee, Joo Hyung; Oh, Se Young

    2014-08-01

    In the previous work, we have reported that organic photovoltaic (OPV) cells using DMDCNQI as an n-type second dopant material showed a high power conversion efficiency (PCE). In the present work, we have synthesized a novel DHDCNQI with long alkyl chains to improve the compatibility between the DHDCNQI dopant molecule and host P3HT polymer. We have fabricated OPV cells consisting of ITO/PEDOT:PSS/P3HT:PCBM:DHDCNQI/Al. We have investigated the characteristics of theses OPV cells using DCNQI derivative dopants from the measurements of the incident photon-to-current collection efficiency and photocurrent. The OPV cell using 3 wt% DHDCNQI exhibited a high PCE of 3.29% due to the high charge separation efficiency, good compatibility and low trap site effect.

  19. Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

    2004-07-01

    Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

  20. Functional characteristics of a new electrolarynx "Evada" having a force sensing resistor sensor.

    Science.gov (United States)

    Choi, H S; Park, Y J; Lee, S M; Kim, K M

    2001-12-01

    Electrolarynxes have been used as one of the rehabilitation methods for laryngectomees. Earlier electrolarynxes could not alter frequency and intensity simultaneously during conversation. Recently, we developed an electrolarynx named "Evada" (prototype so far) using a force sensing resistor (FSR) sensor that can control both frequency and intensity simultaneously during conversation. Employing three types of electrolarynxes (Evada, Servox-inton, Nu-vois), this study was undertaken to examine the functional characteristics of Evada for the normal control group and for laryngectomess. Five laryngectomees and five normal adults were asked to express three sentences (declarative sentence, "You stay here.", interrogative sentence, "You stay here?", and imperative sentence, "You! Stay here.") using three types of electrolarynxes. Frequency and intensity changes between the first and last vowels in the three sentences were calculated and analyzed statistically by paired t test. The frequency changes in the interrogative and imperative sentences were more prominent in Evada than in Servox-inton and Nu-vois. The intensity changes in the interrogative and imperative sentences were also more prominent in Evada than in Servox-inton and Nu-vois. Evada controls frequency and/or intensity by having the subject press the control button(s). Therefore, Evada appears to be better at producing intonation and contrastive stress than Nu-vois and Servox-inton.

  1. Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2013-12-01

    Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

  2. Drastic Control of Texture in a High Performance n-Type Polymeric Semiconductor and Implications for Charge Transport

    KAUST Repository

    Rivnay, Jonathan

    2011-07-12

    Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer {[N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing, while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material. © 2011 American Chemical Society.

  3. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  4. Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

    Science.gov (United States)

    Chen, Hua-Pin

    2014-01-01

    This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

  5. Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

    Directory of Open Access Journals (Sweden)

    Hua-Pin Chen

    2014-01-01

    Full Text Available This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs, two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

  6. Noise properties of Pb/Cd-free thick film resistors

    International Nuclear Information System (INIS)

    Stadler, Adam Witold; Kolek, Andrzej; Zawislak, Zbigniew; Mleczko, Krzysztof; Jakubowska, Malgorzata; Kielbasinski, Konrad Rafal; Mlozniak, Anna

    2010-01-01

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO 2 - and CaRuO 3 -based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter C bulk . Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO 2 layers noise increases most likely due to larger grain size of RuO 2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter C int . Pb/Cd-free RuO 2 -based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO 3 -based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  7. New internal multi-range resistors for ac voltage calibration by using TVC

    International Nuclear Information System (INIS)

    Ali, Rasha S M

    2015-01-01

    Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac–dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac–dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter. (paper)

  8. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  9. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  10. Conceptual design of Dump resistor for Superconducting CS of SST-1

    Science.gov (United States)

    Roy, Swati; Raj, Piyush; Panchal, Arun; Pradhan, Subrata

    2017-04-01

    Under upgradation activities for SST-1, the existing resistive central solenoid (CS) coil will be replaced with Nb3Sn based superconducting coil. Design of Central solenoid had been completed and some of the initiative has already taken for its manufacturing. The superconducting CS will store upto 3 MJ of magnetic energy per operation cycle with operating current upto 14 kA. During quench, energy stored in the coils has to be extracted rapidly with a time constant of 1.5 s by inserting a 20 mΩ dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a critical part of the superconducting CS quench protection system, a conceptual design of the 20 mΩ dump resistor has been proposed. The required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented and discussed. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the form of meander to minimize the stray inductance and increase the surface area for cooling. Such an array of grids connected in series and parallel will cater to the electrical as well as thermal parameters. It will be cooled by natural convection. During operation, the estimated maximum temperature of the proposed dump resistor will raise upto 600 K.

  11. SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

    International Nuclear Information System (INIS)

    Sexton, F.W.; Corbett, W.T.; Treece, R.K.; Hass, K.J.; Axness, C.L.; Hash, G.L.; Shaneyfelt, M.R.; Wunsch, T.F.; Hughes, K.L.

    1991-01-01

    In this paper the SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm 2 /mg and 180 MeV-cm 2 /mg with feedback resistors of 50 kΩ and 160 kΩ, respectively. The performance goal of 10 MHz over the full temperature range of -55 degrees C to +125 degrees C is exceeded for feedback resistors of 160 kΩ and less. Error rate calculations for this design predict that the error rate is less than once every 100 years when 50 kΩ feedback resistors are used in the D-latch design. Analysis of the SEU response using a lumped-parameter circuit simulator imply a charge collection depth of 4.5 μm. This is much deeper than the authors would expect for prompt collection in the epi and funnel regions and has been explained in terms of diffusion current in the heavily doped substrate

  12. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  13. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  14. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  15. Modeling error and stability of endothelial cytoskeletal membrane parameters based on modeling transendothelial impedance as resistor and capacitor in series.

    Science.gov (United States)

    Bodmer, James E; English, Anthony; Brady, Megan; Blackwell, Ken; Haxhinasto, Kari; Fotedar, Sunaina; Borgman, Kurt; Bai, Er-Wei; Moy, Alan B

    2005-09-01

    Transendothelial impedance across an endothelial monolayer grown on a microelectrode has previously been modeled as a repeating pattern of disks in which the electrical circuit consists of a resistor and capacitor in series. Although this numerical model breaks down barrier function into measurements of cell-cell adhesion, cell-matrix adhesion, and membrane capacitance, such solution parameters can be inaccurate without understanding model stability and error. In this study, we have evaluated modeling stability and error by using a chi(2) evaluation and Levenberg-Marquardt nonlinear least-squares (LM-NLS) method of the real and/or imaginary data in which the experimental measurement is compared with the calculated measurement derived by the model. Modeling stability and error were dependent on current frequency and the type of experimental data modeled. Solution parameters of cell-matrix adhesion were most susceptible to modeling instability. Furthermore, the LM-NLS method displayed frequency-dependent instability of the solution parameters, regardless of whether the real or imaginary data were analyzed. However, the LM-NLS method identified stable and reproducible solution parameters between all types of experimental data when a defined frequency spectrum of the entire data set was selected on the basis of a criterion of minimizing error. The frequency bandwidth that produced stable solution parameters varied greatly among different data types. Thus a numerical model based on characterizing transendothelial impedance as a resistor and capacitor in series and as a repeating pattern of disks is not sufficient to characterize the entire frequency spectrum of experimental transendothelial impedance.

  16. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  17. Chemical interaction in resistors based on lead ruthenite with additions of niobium(5) oxide compounds

    International Nuclear Information System (INIS)

    Lozinskij, N.S.; Shevtsova, N.A.; Gruba, A.I.; Volkov, V.I.

    1986-01-01

    The method of X-ray phase analysis was used to study chemical interaction in isothermal cross-section of Pb 2 RU 2 O 6 -Nb 2 O 5 , Rbsub(2)Rusub(2)Osub(6)-NbWOsub(5.5) and Rb 2 Ru 2 O 6 -Pb 2 Nb 2 O 7 systems at 850 deg C as well as in models of real ruthenium resistors. Chemical interaction is stated to take place in systems with niobium (5) oxide and NbWOsub(5.5). Niobium (5) and tungsten (6) displace ruthenium (4) from its compounds with formation of their lead salts. Similar chemical interactions between current-carrying phase of the resistor and modifiers representing niobium-containing take place in models of components of the studied systems take place in models of resistors

  18. Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

    Science.gov (United States)

    Buehler, M. G. (Inventor)

    1985-01-01

    An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

  19. Thermometric characteristics of some 1/8W carbon resistors in the millikelvin range

    International Nuclear Information System (INIS)

    Radebaugh, R.; Holste, J.C.; Siegwarth, J.D.

    1974-01-01

    Gotch and Awano (Cryogenic Engineering (Tokyo); 8:18 (1973)) have reported on the useful characteristics of 1/8W 100Ω Matsushita carbon resistors (grade ERC-18GK) as thermometers for the region 0.4K and 4.2K. Measurements on the resistance characteristics of this grade of resistors from 11mK to 1K are reported here. Nominal resistances of 56Ω, 68Ω, 82Ω, 100Ω, and 220Ω have been measured. It is found that the 56Ω, 68Ω and 82 Ω resistors make useful thermometers down to at least 11mK. A comparison of the resistance behaviour of units immersed in dilute He 3 -He 4 with those outside the liquid is also made. (author)

  20. A Furan-Thiophene-Based Quinoidal Compound: A New Class of Solution-Processable High-Performance n-Type Organic Semiconductor.

    Science.gov (United States)

    Xiong, Yu; Tao, Jingwei; Wang, Ruihao; Qiao, Xiaolan; Yang, Xiaodi; Wang, Deliang; Wu, Hongzhuo; Li, Hongxiang

    2016-07-01

    The furan-thiophene-based quinoidal organic semiconductor, TFT-CN, is designed and synthesized. TFT-CN displays a high electron mobility of 7.7 cm(2) V(-1) s(-1) , two orders of magnitude higher than the corresponding thiophene-based derivative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  2. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  3. Advanced ceramic composite for high energy resistors : Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

    2005-01-01

    There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new, new, conductive, bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor

  4. Method of preparing high-temperature-stable thin-film resistors

    Science.gov (United States)

    Raymond, L.S.

    1980-11-12

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  5. Corrections to scaling in random resistor networks and diluted continuous spin models near the percolation threshold.

    Science.gov (United States)

    Janssen, Hans-Karl; Stenull, Olaf

    2004-02-01

    We investigate corrections to scaling induced by irrelevant operators in randomly diluted systems near the percolation threshold. The specific systems that we consider are the random resistor network and a class of continuous spin systems, such as the x-y model. We focus on a family of least irrelevant operators and determine the corrections to scaling that originate from this family. Our field theoretic analysis carefully takes into account that irrelevant operators mix under renormalization. It turns out that long standing results on corrections to scaling are respectively incorrect (random resistor networks) or incomplete (continuous spin systems).

  6. Method of preparing high-temperature-stable thin-film resistors

    International Nuclear Information System (INIS)

    Raymond, L.S.

    1983-01-01

    A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

  7. Effect of diffusion on percolation threshold in thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2009-01-01

    Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

  8. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    International Nuclear Information System (INIS)

    Norwood, D.P.

    1989-01-01

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

  9. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    Science.gov (United States)

    Semeriyanov, F.; Saphiannikova, M.; Heinrich, G.

    2009-11-01

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  10. Break-collapse method for resistor networks-renormalization group applications

    International Nuclear Information System (INIS)

    Tsallis, C.; Coniglio, A.; Redner, S.

    1982-01-01

    The break-collapse method recently introduced for the q-state Potts model is adapted for resistor networks. This method greatly simplifies the calculation of the conductance of an arbitrary two-terminal d-dimensional array of conductances, obviating the use of either Kirchhoff's laws or the star-triangle or similiar transformations. Related properties are discussed as well. An illustrative real-space renormalization-group treatment of the random resistor problem on the square lattice is presented; satisfactory results are obtained. (Author) [pt

  11. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    International Nuclear Information System (INIS)

    Semeriyanov, F; Saphiannikova, M; Heinrich, G

    2009-01-01

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  12. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  13. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  14. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  15. Small-signal analysis of granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  16. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  17. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  18. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  19. Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    R. Y. Borse

    2009-12-01

    Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

  20. Using an expiratory resistor, arterial pulse pressure variations predict fluid responsiveness during spontaneous breathing: an experimental porcine study.

    Science.gov (United States)

    Dahl, Michael K; Vistisen, Simon T; Koefoed-Nielsen, Jacob; Larsson, Anders

    2009-01-01

    Fluid responsiveness prediction is difficult in spontaneously breathing patients. Because the swings in intrathoracic pressure are minor during spontaneous breathing, dynamic parameters like pulse pressure variation (PPV) and systolic pressure variation (SPV) are usually small. We hypothesized that during spontaneous breathing, inspiratory and/or expiratory resistors could induce high arterial pressure variations at hypovolemia and low variations at normovolemia and hypervolemia. Furthermore, we hypothesized that SPV and PPV could predict fluid responsiveness under these conditions. Eight prone, anesthetized and spontaneously breathing pigs (20 to 25 kg) were subjected to a sequence of 30% hypovolemia, normovolemia, and 20% and 40% hypervolemia. At each volemic level, the pigs breathed in a randomized order either through an inspiratory and/or an expiratory threshold resistor (7.5 cmH2O) or only through the tracheal tube without any resistor. Hemodynamic and respiratory variables were measured during the breathing modes. Fluid responsiveness was defined as a 15% increase in stroke volume (DeltaSV) following fluid loading. Stroke volume was significantly lower at hypovolemia compared with normovolemia, but no differences were found between normovolemia and 20% or 40% hypervolemia. Compared with breathing through no resistor, SPV was magnified by all resistors at hypovolemia whereas there were no changes at normovolemia and hypervolemia. PPV was magnified by the inspiratory resistor and the combined inspiratory and expiratory resistor. Regression analysis of SPV or PPV versus DeltaSV showed the highest R2 (0.83 for SPV and 0.52 for PPV) when the expiratory resistor was applied. The corresponding sensitivity and specificity for prediction of fluid responsiveness were 100% and 100%, respectively, for SPV and 100% and 81%, respectively, for PPV. Inspiratory and/or expiratory threshold resistors magnified SPV and PPV in spontaneously breathing pigs during hypovolemia

  1. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

  2. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  3. Electrical properties of thick-layer piezo resistors based on Bi2Ru2O7

    International Nuclear Information System (INIS)

    Golonka, L.; Tankiewicz, S.

    1997-01-01

    Piezoelectric effect and electrical properties of thick-layer resistors based on Bi 2 Ru 2 O 7 (on ceramic substrate) have been studied. The influence of selected technological parameters (sintering temperature, chemical composition, heat treatment) on system properties has been estimated. 4 refs, 7 figs

  4. A neutral grounding metallic resistor failure in a 35 kV network

    Directory of Open Access Journals (Sweden)

    Simić Ninoslav

    2011-01-01

    Full Text Available This paper presents the results of observations and measurements of the impedance of the metal resistor for grounding neutral of the 35 kV network, before and after damaging event. The proposed measures are to be taken in order to eliminate a failure in this particular case, as well as the prevention of similar events.

  5. Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

    International Nuclear Information System (INIS)

    Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei

    2005-01-01

    Full text : There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics, Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results an improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor. The new material has higher density, highee peak of temperature limit and greater physical strength compared with bulk ceramics currently used for pulsed power resistors. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-power density, as compared to existing components would be expected and derived from specific properties such as good thermal conductivity, high strength, thermal shock resistance and high temperature capability. The bulk resistor approach that weas proposed offers high reliability through better mechanical properties and simplicity of construction

  6. The Transition from Traditional to Whole Language Instruction: A Continuum from Reformers to Resistors.

    Science.gov (United States)

    Schweiker, Karyn E.; Barksdale-Ladd, Mary Alice

    Factors that influenced teachers to become reformers, reviewers, or resistors to whole language were investigated with specific examination of school culture. In this study three transitioning school sites were selected on the basis of their similarity in staffing and student size. Participants from each school involved three to four classroom…

  7. A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

    NARCIS (Netherlands)

    Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2008-01-01

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

  8. Processing, microstructure, and electric properties of buried resistors in low-temperature co-fired ceramics

    International Nuclear Information System (INIS)

    Yang, Pin; Rodriguez, Mark A.; Kotula, Paul; Miera, Brandon K.; Dimos, Duane

    2001-01-01

    The electrical properties of ruthenium oxide based devitrifiable resistors embedded within low-temperature co-fired ceramics were investigated from -100 o C to 100 o C. Special attention was given to the processing conditions and their effects on resistance and temperature coefficient of resistance (TCR). Results indicate that within this temperature range the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle--particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle--particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The tradeoff between these two effects results in an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these buried resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural changes in the resistor, which in turn, are controlled by the processing conditions

  9. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

    2006-01-01

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

  10. Semiconductor device and method of manufacturing the same

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type,

  11. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  12. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  13. Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

    International Nuclear Information System (INIS)

    Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

    2008-01-01

    The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

  14. Measurements of fuse and resistor characteristics for multi-megajoule capacitor bank application

    International Nuclear Information System (INIS)

    McDonald, K.F.; Smith, T.; Golden, J.; Conley, B.

    1986-01-01

    Experimental tests have been conducted on commercially available fuses and resistors under fast high voltage pulsed (10 μsec) conditions to determine their ability to protect capacitor bank components during faults. NRL's Modified Betatron Accelerator uses two multi-megajoule capacitor banks to power the toroidal and betatron magnetic field coils. The expensive high energy density capacitors in these banks must be protected from excessive peak current, voltage reversal, or charging beyond their electrical ratings in the occurrence of a fault. Adequate protection can be obtained with fuses and resistors in series with each parallel connected capacitor. The fuses must open reliably and hold off high voltage D.C. (10 - 20 kV), and the resistors must conduct high current and di/dt without failing from energy deposition or magnetic forces. The performance of the commercial fuses is well documented at low AC frequencies and currents (60 Hz/100 A) but data was not previously available for the fast high current pulsed conditions that prevail under actual fault conditions. A 20 kV 200 kJ, low inductance capacitor bank and ignitron switch were used to conduct the experiments. Peak currents in the fuses were approximately 170 kA at t - 6.5 μs. The final fuse hold-off voltage exceeded 8 kV. Currents in the resistors ranged from - 20 - 40 kA per resistor. The experimental results have been compared to the manufacturers data from minimum melt and maximum let-through and to exploding bridge wire computer models

  15. Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. I. Electrical stability

    International Nuclear Information System (INIS)

    Murakami, M.; Alessandrini, E.I.; Kim, K.K.

    1984-01-01

    Bilayered Au/Ti films are very attractive for use as resistor materials of experimental Nb/Pb-alloy Josephson junction devices. In order to predict the electrical stability of the Au/Ti resistors during storage at room temperature, changes in microstructure and electrical resistivity of Ti and Au/Ti films during isothermal annealing at temperatures ranging from 298--473 K were studied using transmission electron microscopy, x-ray diffraction, and electrical measurements. Growth of Ti grains during annealing was observed in these films. The activation energy for the grain growth was determined to be 1.51 eV. Decreases in the sheet resistance measured at 4.2 K were observed at the early stages of isothermal annealing. By analyzing the annealing temperature dependence of rates of resistance changes, the activation energy of 1.49 eV was obtained. This energy value is very close to that obtained for the grain growth and, therefore, one of the main causes in the resistance decrease is believed to be due to the growth of Ti grains. Based on the present results, a model to predict the electrical resistance change for the Au/Ti films during storage at room temperature was established. The model predicted that change in the resistance can be significantly reduced by preannealing the resistors at an elevated temperature. The prediction was supported by the experiment and an excellent quantitative agreement between measured resistance values and those predicted by the model was obtained. Based on this model, the change was predicted to be -1.5% after about 3 years at room temperature, if the resistors were preannealed at 353 K for 10 h. This resistor stability is satisfactory for designing logic and memory circuits of Josephson devices, and it can be increased simply by preannealing for longer times at 353 K

  16. Test of the Starling resistor model in the human upper airway during sleep.

    Science.gov (United States)

    Wellman, Andrew; Genta, Pedro R; Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Loring, Stephen H; White, David P; Jackson, Andrew C; Pedersen, Ole F; Butler, James P

    2014-12-15

    The human pharyngeal airway during sleep is conventionally modeled as a Starling resistor. However, inspiratory flow often decreases with increasing effort (negative effort dependence, NED) rather than remaining fixed as predicted by the Starling resistor model. In this study, we tested a major prediction of the Starling resistor model--that the resistance of the airway upstream from the site of collapse remains fixed during flow limitation. During flow limitation in 24 patients with sleep apnea, resistance at several points along the pharyngeal airway was measured using a pressure catheter with multiple sensors. Resistance between the nose and the site of collapse (the upstream segment) was measured before and after the onset of flow limitation to determine whether the upstream dimensions remained fixed (as predicted by the Starling resistor model) or narrowed (a violation of the Starling resistor model). The upstream resistance from early to mid inspiration increased considerably during flow limitation (by 35 ± 41 cmH2O · liter(-1) · s(-1), P < 0.001). However, there was a wide range of variability between patients, and the increase in upstream resistance was strongly correlated with the amount of NED (r = 0.75, P < 0.001). Therefore, patients with little NED exhibited little upstream narrowing (consistent with the Starling model), and patients with large NED exhibited large upstream narrowing (inconsistent with the Starling model). These findings support the idea that there is not a single model of pharyngeal collapse, but rather that different mechanisms may dominate in different patients. These differences could potentially be exploited for treatment selection. Copyright © 2014 the American Physiological Society.

  17. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  18. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  19. The resistance changes of carbon and metal oxide film resistors by irradiation of 60Co γ rays

    International Nuclear Information System (INIS)

    Okamoto, Shinichi; Fujino, Takahiro; Furuta, Junichiro; Yoshida, Toshio

    1979-01-01

    The resistance changes of glass-sealed deposited-carbon-film and carbon-coated-film resitors and metal oxide glazed resistors made in USA were studied by gamma-ray irradiation. (1) The resistances of deposited-carbon-film resistors of 50, 100 and 200 megohm did not change by irradiation of gamma rays up to 1.9 x 10 9 R. (2) The carbon-coated-film resistors of 100, 1000, 10000 and 100000 megohm had negative resistance changes by irradiation of gamma rays up to 9.9 x 10 8 R. (3) The resistances of metal oxide glazed resistors of 100, 1000 and 10000 megohm did not change by irradiation of gamma rays up to 8.8 x 10 8 R. When radiation monitoring instruments with hi-meg resistors are used in a gamma field with high intensity, the resistors must not be exposed to gamma rays with high doses, or the resistors which do not change by gamma-ray irradiation must be selected. (author)

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Measurement of small ion beams by thermal ionisation mass spectrometry using new 1013 Ohm resistors

    International Nuclear Information System (INIS)

    Koornneef, J.M.; Bouman, C.; Schwieters, J.B.; Davies, G.R.

    2014-01-01

    Highlights: • First data are presented using 10 13 Ohm resistors connected to Faraday collectors. • 5 prototype 10 13 Ohm resistors were installed in a TRITON-Plus TIMS. • Performance was tested by measuring Sr and Nd isotope ratios on  13 Ohm resistors perform better than ion counting and 10 11 Ohm resistors. • Fourth decimal variability can be resolved for Nd isotope ratios on 10 pg samples. - Abstract: We tested 5 newly manufactured – prototype – 10 13 Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10 11 Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2 × 10 −16 to 1 × 10 −12 A, corresponding to intensities of 32 μV to 100 mV on a default 10 11 Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10 13 compared 10 12 Ohm resistors and to the default 10 11 Ohm resistors. At an 87 Sr ion current of 3 × 10 −14 A (3 mV on a 10 11 Ohm amplifier) the internal precision (2 SE) of 87 Sr/ 86 Sr is 5 times better for 10 13 Ohm resistors compared to 10 11 Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low 87 Sr/ 86 Sr compared to the long term average (e.g. 10 pg average = 0.710083 ± 164 (n = 11) instead of 0.710244 ± 12, n = 73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the

  3. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  4. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  5. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  6. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  7. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  8. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  9. Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

    Science.gov (United States)

    Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

    2017-12-01

    Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

  10. 4-bit digital to analog converter using R-2R ladder and binary weighted resistors

    Science.gov (United States)

    Diosanto, J.; Batac, M. L.; Pereda, K. J.; Caldo, R.

    2017-06-01

    The use of a 4-bit digital-to-analog converter using two methods; Binary Weighted Resistors and R-2R Ladder is designed and presented in this paper. The main components that were used in constructing both circuits were different resistor values, operational amplifier (LM741) and single pole double throw switches. Both circuits were designed using MULTISIM software to be able to test the circuit for its ideal application and FRITZING software for the layout designing and fabrication to the printed circuit board. The implementation of both systems in an actual circuit benefits in determining and comparing the advantages and disadvantages of each. It was realized that the binary weighted circuit is more efficient DAC, having lower percentage error of 0.267% compared to R-2R ladder circuit which has a minimum of percentage error of 4.16%.

  11. Sizing of the Series Dynamic Breaking Resistor in a Doubly Fed Induction Generator Wind Turbine

    DEFF Research Database (Denmark)

    Soliman, Hammam; Wang, Huai; Zhou, Dao

    2014-01-01

    This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter and the maxi......This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter...... and the maximum allowable voltage of the stator. Then the impact of the SDBR value on the rotor current, stator voltage, DC-link voltage, reactive power capability and introduced power loss during voltage sag operation is evaluated by simulation. The presented study enables a trade-off sizing of the SDBR among...

  12. Conductivity of a square-lattice bond-mixed resistor network

    International Nuclear Information System (INIS)

    Costa, U.M.S.; Tsallis, C.; Schwaccheim, G.

    1985-01-01

    Within a real-space renormalization-group framework based on self-dual clusters, the conductivity of a square-lattice quenched bond-random resistor network is calculated, the conductance on each bond being g 1 or g 2 with probabilities (1-p) and p respectively. The group recovers several already known exact results (including slopes), and is consequently believed to be numerically quite reliable for almost all values of p, and all ratios g 1 /g 2 (in particular, g 1 =0 and g 1 =infinite with finite g 2 respectively correspond to the insulator-resitor and superconductor-resistor mixtures). In addition to that, an heuristic analytic expression is proposed for the conductivity which is believed to be a quite satisfactory approximation everywhere not too close to the percolation point. (Author) [pt

  13. Update for nurse anesthetists. The Starling resistor: a model for explaining and treating obstructive sleep apnea.

    Science.gov (United States)

    Stalford, Catherine B

    2004-04-01

    Recent epidemiological research places the incidence of obstructive sleep apnea as high as 16% in the general population. Serious postoperative respiratory complications and death have been reported in this population. Anesthetic drugs contribute to these complications secondary to acute and residual influences on the complex orchestration of airway muscles and reflexes involved in airway patency. The Starling resistor model is a theoretical model that has application in explaining upper airway dynamics and the treatment and management of obstructive sleep apnea. The model postulates the oropharynx as a collapsible tube. The oropharynx remains open or partially or completely closed as a result of pressure upstream at the nose and mouth, pressure downstream at the trachea and below, or tissue pressure surrounding the oropharynx. This AANA Journal course provides an overview of the Starling resistor model, its application to obstructive sleep apnea, and preoperative and postoperative anesthetic considerations.

  14. Current flow in random resistor networks: the role of percolation in weak and strong disorder.

    Science.gov (United States)

    Wu, Zhenhua; López, Eduardo; Buldyrev, Sergey V; Braunstein, Lidia A; Havlin, Shlomo; Stanley, H Eugene

    2005-04-01

    We study the current flow paths between two edges in a random resistor network on a L X L square lattice. Each resistor has resistance e(ax) , where x is a uniformly distributed random variable and a controls the broadness of the distribution. We find that: (a) The scaled variable u identical with u congruent to L/a(nu) , where nu is the percolation connectedness exponent, fully determines the distribution of the current path length l for all values of u . For u > 1, the behavior corresponds to the weak disorder limit and l scales as l approximately L, while for u < 1 , the behavior corresponds to the strong disorder limit with l approximately L(d(opt) ), where d(opt) =1.22+/-0.01 is the optimal path exponent. (b) In the weak disorder regime, there is a length scale xi approximately a(nu), below which strong disorder and critical percolation characterize the current path.

  15. Implantable bladder volume sensor based on resistor ladder network composed of conductive hydrogel composite.

    Science.gov (United States)

    Mi Kyung Kim; Hyojung Kim; Jung, Yeon Su; Adem, Kenana M A; Bawazir, Sarah S; Stefanini, Cesare; Lee, Hyunjoo J

    2017-07-01

    An accurate bladder volume monitoring system is a critical component in diagnosis and treatment of urological disorders. Here, we report an implantable bladder volume sensor with a multi-level resistor ladder which estimates the bladder volume through discrete resistance values. Discretization allows the sensor output to be resilient to the long-term drift, hysteresis, and degradation of the sensor materials. Our sensor is composed of biocompatible polypyrrole/agarose hydrogel composite. Because Young's modulus of this composite is comparable to that of the bladder wall, the effect of mechanical loading of the sensor on the bladder movement is minimized which allows more accurate volume monitoring. We also demonstrate the patterning and molding capability of this material by fabrication various structures. Lastly, we successfully demonstrate the functionality of the multi-level resistor ladder sensor as a bladder volume sensor by attaching the sensor on the pig's bladder and observing the impedance change of the sensor.

  16. Nonlinear random resistor diode networks and fractal dimensions of directed percolation clusters.

    Science.gov (United States)

    Stenull, O; Janssen, H K

    2001-07-01

    We study nonlinear random resistor diode networks at the transition from the nonpercolating to the directed percolating phase. The resistor-like bonds and the diode-like bonds under forward bias voltage obey a generalized Ohm's law V approximately I(r). Based on general grounds such as symmetries and relevance we develop a field theoretic model. We focus on the average two-port resistance, which is governed at the transition by the resistance exponent straight phi(r). By employing renormalization group methods we calculate straight phi(r) for arbitrary r to one-loop order. Then we address the fractal dimensions characterizing directed percolation clusters. Via considering distinct values of the nonlinearity r, we determine the dimension of the red bonds, the chemical path, and the backbone to two-loop order.

  17. Nanoporous carbon tunable resistor/transistor and methods of production thereof

    Science.gov (United States)

    Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

    2014-04-22

    In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

  18. Intermittency-induced criticality in a resistor-inductor-diode circuit.

    Science.gov (United States)

    Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

    2017-04-01

    The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

  19. Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film.

    Science.gov (United States)

    Wan, Zhenni; Darling, Robert B; Anantram, M P

    2015-11-11

    Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different I-V characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

  20. Leaf venation, as a resistor, to optimize a switchable IR absorber.

    Science.gov (United States)

    Alston, M E; Barber, R

    2016-08-24

    Leaf vascular patterns are the mechanisms and mechanical support for the transportation of fluidics for photosynthesis and leaf development properties. Vascular hierarchical networks in leaves have far-reaching functions in optimal transport efficiency of functional fluidics. Embedding leaf morphogenesis as a resistor network is significant in the optimization of a translucent thermally functional material. This will enable regulation through pressure equalization by diminishing flow pressure variation. This paper investigates nature's vasculature networks that exhibit hierarchical branching scaling applied to microfluidics. To enable optimum potential for pressure drop regulation by algorithm design. This code analysis of circuit conduit optimization for transport fluidic flow resistance is validated against CFD simulation, within a closed loop network. The paper will propose this self-optimization, characterization by resistance seeking targeting to determine a microfluidic network as a resistor. To advance a thermally function material as a switchable IR absorber.

  1. Depth of interaction detection with enhanced position-sensitive proportional resistor network

    International Nuclear Information System (INIS)

    Lerche, Ch.W.; Benlloch, J.M.; Sanchez, F.; Pavon, N.; Gimenez, N.; Fernandez, M.; Gimenez, M.; Sebastia, A.; Martinez, J.; Mora, F.J.

    2005-01-01

    A new method of determining the depth of interaction of γ-rays in thick inorganic scintillation crystals was tested experimentally. The method uses the strong correlation between the width of the scintillation light distribution within large continuous crystals and the γ-ray's interaction depth. This behavior was successfully reproduced by a theoretical model distribution based on the inverse square law. For the determination of the distribution's width, its standard deviation σ is computed using an enhanced position-sensitive proportional resistor network which is often used in γ-ray-imaging devices. Minor changes of this known resistor network allow the analog and real-time determination of the light distribution's 2nd moment without impairing the measurement of the energy and centroid. First experimental results are presented that confirm that the described method works correctly. Since only some cheap electronic components, but no additional detectors or crystals are required, the main advantage of this method is its low cost

  2. X-Ray Characterization of Resistor/Dielectric Material for Low Temperature Co-Fired Ceramic Packages

    International Nuclear Information System (INIS)

    DIMOS, DUANE B.; KOTULA, PAUL G.; RODRIGUEZ, MARK A.; YANG, PIN

    1999-01-01

    High temperature XRD has been employed to monitor the devitrification of Dupont 951 low temperature co-fired ceramic (LTCC) and Dupont E84005 resistor ink. The LTCC underwent devitrification to an anorthite phase in the range of 835-875 C with activation energy of 180 kJ/mol as calculated from kinetic data. The resistor paste underwent devitrification in the 835-875 C range forming monoclinic and hexagonal celcian phases plus a phase believed to be a zinc-silicate. RuO(sub 2) appeared to be stable within this devitrified resistor matrix. X-ray radiography of a co-fired circuit indicated good structural/chemical compatibility between the resistor and LTCC

  3. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  4. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  5. Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices

    Science.gov (United States)

    Smieska, Louisa Marion

    Organic semiconductors could have wide-ranging applications in lightweight, efficient electronic circuits. However, several fundamental questions regarding organic electronic device behavior have not yet been fully addressed, including the nature of chemical charge traps, and robust models for injection and transport. Many studies focus on engineering devices through bulk transport measurements, but it is not always possible to infer the microscopic behavior leading to the observed measurements. In this thesis, we present scanning-probe microscope studies of organic semiconductor devices in an effort to connect local properties with local device behavior. First, we study the chemistry of charge trapping in pentacene transistors. Working devices are doped with known pentacene impurities and the extent of charge trap formation is mapped across the transistor channel. Trap-clearing spectroscopy is employed to measure an excitation of the pentacene charge trap species, enabling identification of the degradationrelated chemical trap in pentacene. Second, we examine transport and trapping in peryelene diimide (PDI) transistors. Local mobilities are extracted from surface potential profiles across a transistor channel, and charge injection kinetics are found to be highly sensitive to electrode cleanliness. Trap-clearing spectra generally resemble PDI absorption spectra, but one derivative yields evidence indicating variation in trap-clearing mechanisms for different surface chemistries. Trap formation rates are measured and found to be independent of surface chemistry, contradicting a proposed silanol trapping mechanism. Finally, we develop a variation of scanning Kelvin probe microscopy that enables measurement of electric fields through a position modulation. This method avoids taking a numeric derivative of potential, which can introduce high-frequency noise into the electric field signal. Preliminary data is presented, and the theoretical basis for electric field

  6. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  7. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  8. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  9. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  10. Development of resistor assemblies at 14 UD pelletron accelerator facility BARC-TIFR, Mumbai

    International Nuclear Information System (INIS)

    Ramlal; Ekambaram, M.; Matkar, U.V.; Lokare, R.N.; Gore, J.A.; Tambwekar, V.V.; Kulkarni, S.G.; Gupta, A.K.; Bhagwat, P.V.; Kailas, S.; Karande, J.N.; Kurup, M.B.

    2002-01-01

    An important consideration in high voltage design of an electrostatic accelerator is the potential grading system used to divide the terminal potential equitably (or as required) across the column or tube electrode gaps. This is generally accomplished by tapping the electrode potentials from across a resistor-chain or from a series of corona gaps as in the Pelletron Accelerator. However, each potential grading system has its own set of advantages and disadvantages

  11. Use of a Pre-Insertion Resistor to Minimize Zero-Missing Phenomenon and Switching Overvoltages

    DEFF Research Database (Denmark)

    Bak, Claus Leth; da Silva, Filipe Miguel Faria; Gudmundsdottir, Unnur Stella

    2009-01-01

    With the increasing use of High-Voltage Cables, which have different electric characteristics from Overhead Lines, phenomenon like current zero-missing start to appear more often on the transmission systems. Methods to prevent zero-missing phenomenon are still being studied and compared to see wh...... an optimal value of the resistance of the pre-insertion resistor that results in minimizing both the zero-missing phenomenon and switching overvoltages simultaneously....

  12. Designing a Signal Conditioning System with Software Calibration for Resistor-feedback Patch Clamp Amplifier.

    Science.gov (United States)

    Hu, Gang; Zhu, Quanhui; Qu, Anlian

    2005-01-01

    In this paper, a programmable signal conditioning system based on software calibration for resistor-feedback patch clamp amplifier (PCA) has been described, this system is mainly composed of frequency correction, programmable gain and filter whose parameters are configured by software automatically to minimize the errors, A lab-designed data acquisition system (DAQ) is used to implement data collections and communications with PC. The laboratory test results show good agreement with design specifications.

  13. Effects of varying laser trimming geometries on thin film\\ud resistors

    OpenAIRE

    Alafogianni, Maria; Birkett, Martin; Penlington, Roger

    2017-01-01

    Purpose - This paper studies the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value.\\ud \\ud Design/methodology/approach - The benefits and limitations of basic trim patterns are taken into consideration and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns h...

  14. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  15. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  16. Single pole rapid reclosing: effective damping of ehv switching surges through discharge resistors

    Energy Technology Data Exchange (ETDEWEB)

    Heinemann, T

    1965-04-30

    The stability of interconnecting circuits is very important and loss of synchronism of a complete network due to a temporary single-phase fault is operationally and economically undesirable. The use of grounding resistors together with load-break isolators which can be electrically or mechanically coupled to the circuit-breakers yield interesting possibilities in extra-high-voltage networks. The three problems, i.e., discharging of charged lines, damping of switching surges, and single-pole rapid-reclosing, can be solved through the use of a number of similar resistors and load-break isolators connected in series according to the voltage. The thermal and electrical stresses of the resistors can be kept within permissible limits. The time required for arc extinction and the limits in respect of length of lines will have to be determined by actual tests. For single-pole rapid-reclosing during a single-phase earth fault the switching operations on both sides of the line must be simultaneous. Because of the very small divergence of the opening and making times of modern circuit-breakers it will be sufficient only to synchronise the operating impulse.

  17. History of resistor array infrared projectors: hindsight is always 100% operability

    Science.gov (United States)

    Williams, Owen M.; Goldsmith, George C., II; Stockbridge, Robert G.

    2005-05-01

    Numerous infrared scene projection technologies have been investigated since the 1970s. Notably, from the late 1980s the development of the first resistor array infrared projectors gained leverage from the strong concurrent developments within focal plane array imaging technology, linked by the common need for large integrated circuits comprising a 2-dimensional array of interconnected unit cells. In the resistor array case, it is the unit cell comprising the resistively heated emitter and its dedicated drive circuit that determines the projector response to its associated scene generator commands. In this paper we review the development of resistor array technology from a historical perspective, concentrating on the unit cell developments. We commence by describing the technological innovations that forged the way, sharing along the way stories of the successes and failures, all of which contributed to the steady if somewhat eventful growth of the critical knowledge base that underpins the strength of today's array technology. We conclude with comments on the characteristics and limitations of the technology and on the prospects for future array development.

  18. Pyramidal resistor networks for electrical impedance tomography with partial boundary measurements

    International Nuclear Information System (INIS)

    Borcea, L; Mamonov, A V; Druskin, V; Vasquez, F Guevara

    2010-01-01

    We introduce an inversion algorithm for electrical impedance tomography (EIT) with partial boundary measurements in two dimensions. It gives stable and fast reconstructions using sparse parameterizations of the unknown conductivity on optimal grids that are computed as part of the inversion. We follow the approach in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD thesis Rice University, Houston, TX, USA) that connects inverse discrete problems for resistor networks to continuum EIT problems, using optimal grids. The algorithm in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD Thesis Rice University, Houston, TX, USA) is based on circular resistor networks, and solves the EIT problem with full boundary measurements. It is extended in Borcea et al (2010 Inverse Problems 26 045010) to EIT with partial boundary measurements, using extremal quasi-conformal mappings that transform the problem to one with full boundary measurements. Here we introduce a different class of optimal grids, based on resistor networks with pyramidal topology, that is better suited for the partial measurements setup. We prove the unique solvability of the discrete inverse problem for these networks and develop an algorithm for finding them from the measurements of the Dirichlet to Neumann map. Then, we show how to use the networks to define the optimal grids and to approximate the unknown conductivity. We assess the performance of our approach with numerical simulations and compare the results with those in Borcea et al (2010)

  19. Biased resistor network model for electromigration failure and related phenomena in metallic lines

    Science.gov (United States)

    Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

    2004-11-01

    Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

  20. A study on embedded resistor components fabricated by laser micro-cladding and rapid prototype

    International Nuclear Information System (INIS)

    Li Huiling; Zeng Xiaoyan

    2006-01-01

    With the rapid development of IC and packaging, electronic devices are required to be smaller, to have a high-density integration, to become multifunction and to be of lower cost and high-reliability. Thick-film technology is not able to meet the current developing demands because of its shortcomings, such as the limit of pattern resolution, the severe torsion and delay of high-speed signal transmission. The speed and quality of signal transmission will be improved if embedded resistor components are directly integrated in the multiplayer substrate of multi-chip or laminated module, and high-density integration and reliability are achieved because the short interconnection and the less soldering point. In this paper, a technique named laser micro-cladding and rapid prototype is used to directly fabricate embedded resistor units on the multiplayer ceramic substrate without using a mask and high-temperature sintering, and without trimming resistor, which will simplify processing and decrease cost as well as improving high-speed and reliable performance

  1. Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

    Science.gov (United States)

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

    2016-07-22

    The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

  2. Method of triggering the vacuum arc in source with a resistor

    International Nuclear Information System (INIS)

    Zheng Le; Lan Zhaohui; Long Jidong; Peng Yufei; Li Jie; Yang Zhen; Dong Pan; Shi Jinshui

    2014-01-01

    Background: The metal vapor vacuum arc (MEVVA) ion source is a common source which provides strong metal ion flow. To trigger this ion source, a high-voltage trigger pulse generator and a high-voltage isolation pulse transformer are needed, which makes the power supply system complex. Purpose: To simplify the power supply system, a trigger method with a resistor was introduced, and some characteristics of this method were studied. Methods: The ion flow provided by different main arc current was measured, as well as the trigger current. The main arc current and the ion current were recorded with different trigger resistances. Results: Experimental results showed that, within a certain range of resistances, the larger the resistance value, the more difficult it was to success fully trigger the source. Meanwhile, the main arc rising edge became slower on the increasing in the trigger time. However, the resistance value increment had hardly impact on the intensity of ion flow extracted in the end, The ion flow became stronger with the increasing main arc current. Conclusion: The power supply system of ion source is simplified by using the trigger method with a resistor. Only a suitable resistor was needed to complete the conversion process from trigger to arc initiating. (authors)

  3. Maximum Bandwidth Enhancement of Current Mirror using Series-Resistor and Dynamic Body Bias Technique

    Directory of Open Access Journals (Sweden)

    V. Niranjan

    2014-09-01

    Full Text Available This paper introduces a new approach for enhancing the bandwidth of a low voltage CMOS current mirror. The proposed approach is based on utilizing body effect in a MOS transistor by connecting its gate and bulk terminals together for signal input. This results in boosting the effective transconductance of MOS transistor along with reduction of the threshold voltage. The proposed approach does not affect the DC gain of the current mirror. We demonstrate that the proposed approach features compatibility with widely used series-resistor technique for enhancing the current mirror bandwidth and both techniques have been employed simultaneously for maximum bandwidth enhancement. An important consequence of using both techniques simultaneously is the reduction of the series-resistor value for achieving the same bandwidth. This reduction in value is very attractive because a smaller resistor results in smaller chip area and less noise. PSpice simulation results using 180 nm CMOS technology from TSMC are included to prove the unique results. The proposed current mirror operates at 1Volt consuming only 102 µW and maximum bandwidth extension ratio of 1.85 has been obtained using the proposed approach. Simulation results are in good agreement with analytical predictions.

  4. A new computer-aided simulation model for polycrystalline silicon film resistors

    Science.gov (United States)

    Ching-Yuan Wu; Weng-Dah Ken

    1983-07-01

    A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

  5. Two types of the relation between the intensity and the life time of photoluminescence of core/shell semiconductor quantum dots: Important role of Coulomb field and tunneling transitions

    Energy Technology Data Exchange (ETDEWEB)

    Osad' ko, I. S., E-mail: osadko@isan.troitsk.ru [Institute for spectroscopy RAS, Troitsk, 142190 Moscow (Russian Federation)

    2014-10-28

    It has been recently found [Gh. Galland, Y. Ghosh, A. Steinbrück, M. Sykora, J. A. Hollingsworth, and V. I. Klimov, Nature (London) 479, 203 (2011)] that semiconductor core/shell nanocrystals (NCs) with blinking photoluminescence (PL) can be of “A” or “B” type. NCs of A-type exhibit correlation between the intensity of PL and the life time. In NCs of B-type such correlation is absent. Simple model based on combination of the charging model and the two-level system model is proposed for describing emissive properties of NCs of both types. The model invokes fluctuations of emission ability γ{sub em} of NC to explain the emissive properties of NCs of B-type. Our combined model is also in agreement with anticorrelation between the duration τ{sub off} of off intervals and PL life time t{sub off} in off intervals found recently for NCs of A-type in the experiment [A. A. Cordones, T. J. Bixby, and S. R. Leone, Nano Lett. 11, 3366 (2011)].

  6. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  7. High-precision ID-TIMS zircon U-Pb geochronology using new 1013 Ohm resistors

    Science.gov (United States)

    Von Quadt, A.; Buret, Y.; Large, S.; Peytcheva, I.; Trinquier, A.; Wotzlaw, J. F.

    2015-12-01

    Faraday cups equipped with high gain amplifiers provide a means to measure small ion beams in static mode without the limited linear range of ion counting systems. We tested the application of newly available 1013 Ohm resistors to ID-TIMS zircon U-Pb geochronology using a range of natural and synthetic reference materials. The TritonPlus-RPQ at the Institute of Geochemistry and Petrology, ETH Zurich, is equipped with five new 1013 Ohm resistors and one MasCom secondary electron multiplier, allowing to measure the 202-204-205-206-207-208Pb masses in static mode. U is measured subsequently as U-oxide (265-267-270UO2) during a second step, also in static Faraday mode. The gain calibration of the 1013 Ohm resistors was performed using the procedure of Trinquier (2014), with 144Nd-146Nd being measured using 1011 Ohm resistor and 142-143-145-148-150Nd being measured using 1013 Ohm resitors (Trinquier, 2014; Koornneef et al., 2014). Standard deviations of the noise in all five new 1013 Ohm resistors are lower than 5.0 x 10-6 over a 6 month period, with no shift occurring over this time interval. This new detector set-up was tested by analyzing natural zircon standard materials and synthetic U/Pb solutions (www.earthime.org), ranging in age from ~2 Ma to ~600 Ma. All natural zircon standards were chemically abraded (Mattinson, 2005) and all samples were spiked with the ET2535 tracer solution. U-Pb dates obtained using the static measurement routine are compared to measurements employing dynamic peak jumping routines on the MasCom multiplier. This study illustrates the benefits and current limitations of using high gain amplifiers to measure small ion beams for zircon U-Pb geochronology compared to conventional dynamic ion counting techniques. Mattinson, J.M. (2005) Chemical Geology 220:47-66; Trinquier, A. (2014) Application Note 30281; Koornneef, J. et al (2014) Analytica Chimica Acta 819:49-55.

  8. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

    Science.gov (United States)

    Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

    2014-01-01

    Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

  9. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  10. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  11. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  12. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  13. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  14. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  15. A unique metal-semiconductor interface and resultant electron transfer phenomenon

    OpenAIRE

    Taft, S. L.

    2012-01-01

    An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

  16. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

    Science.gov (United States)

    2014-01-01

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

  18. PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

    Science.gov (United States)

    Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

    2014-04-30

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

  19. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  20. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  1. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  2. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  3. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  4. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    International Nuclear Information System (INIS)

    Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

    2016-01-01

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm"3 size) with "2"2Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  5. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonghai [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Sun, Xishan [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Lou, Kai [Department of Electrical and Computer Engineering, Rice University, Houston, Tx (United States); Meier, Joseph [Department of Imaging Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Zhou, Rong; Yang, Chaowen [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Zhu, Xiaorong [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Shao, Yiping [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States)

    2016-04-21

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm{sup 3} size) with {sup 22}Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  6. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  7. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

    1998-01-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

  8. Submillimetre wave spectroscopy of semiconductors in high magnetic fields

    International Nuclear Information System (INIS)

    Maan, J.C.

    1979-01-01

    Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

  9. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

  10. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  11. Random-Resistor-Random-Temperature Kirchhoff-Law-Johnson-Noise (RRRT-KLJN Key Exchange

    Directory of Open Access Journals (Sweden)

    Kish Laszlo B.

    2016-03-01

    Full Text Available We introduce two new Kirchhoff-law-Johnson-noise (KLJN secure key distribution schemes which are generalizations of the original KLJN scheme. The first of these, the Random-Resistor (RR- KLJN scheme, uses random resistors with values chosen from a quasi-continuum set. It is well-known since the creation of the KLJN concept that such a system could work in cryptography, because Alice and Bob can calculate the unknown resistance value from measurements, but the RR-KLJN system has not been addressed in prior publications since it was considered impractical. The reason for discussing it now is the second scheme, the Random Resistor Random Temperature (RRRT- KLJN key exchange, inspired by a recent paper of Vadai, Mingesz and Gingl, wherein security was shown to be maintained at non-zero power flow. In the RRRT-KLJN secure key exchange scheme, both the resistances and their temperatures are continuum random variables. We prove that the security of the RRRT-KLJN scheme can prevail at a non-zero power flow, and thus the physical law guaranteeing security is not the Second Law of Thermodynamics but the Fluctuation-Dissipation Theorem. Alice and Bob know their own resistances and temperatures and can calculate the resistance and temperature values at the other end of the communication channel from measured voltage, current and power-flow data in the wire. However, Eve cannot determine these values because, for her, there are four unknown quantities while she can set up only three equations. The RRRT-KLJN scheme has several advantages and makes all former attacks on the KLJN scheme invalid or incomplete.

  12. OSL and TL of Resistors of Mobile Phones for Retrospective Accident Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. I.; Kim, J. L.; Pradhan, A. S.; Chang, I.; Kim, B. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-05-15

    work place and in the public rather than actual health hazard due to radiation exposure. Therefore, a quick demonstration of measurement of doses following the accident is needed to reassure those receiving insignificant or low level of exposures that they are quite safe and need no treatment. This confidence building also becomes an important aspect of dosimetry. As the ranges of doses which could be encountered in such situations may vary from the background level to significantly high doses depending on the type of accident / incident and the location of personnel, it becomes important that the techniques used in retrospective dosimetry should be very sensitive and should be able to measure doses in a wide range from background level to several Gy. More recently, with the increasing apprehensions of nuclear terrorism / dirty bomb, research and developments in retrospective dosimetry has gained a new momentum the world over. Among the TL and OSL sensitive materials, the extraction and the processing of the materials from bricks and roof tiles is a very time consuming process and gives indirect estimate of individual doses. On the other hand, TL and OSL properties of components of electronic devices mobile phones, i-pods, black-berries, mp3 players and USB sticks containing ceramics with luminescence properties (e.g resistors, capacitors, resonators, antenna switches, transistors etc.) and chip cards containing silica epoxy (e.g. credit cards, bank cards, social security card, telephone card, SIM cards, ID cards e.g) are being considered very attractive and being evaluated. In this study, the TL and OSL properties of the electronic components of mobile phones are investigated and dose recovery potential is evaluated with a presumption that a mobile phone has become a part of body belongings masses of almost ages

  13. OSL and TL of Resistors of Mobile Phones for Retrospective Accident Dosimetry

    International Nuclear Information System (INIS)

    Lee, J. I.; Kim, J. L.; Pradhan, A. S.; Chang, I.; Kim, B. H.

    2012-01-01

    and in the public rather than actual health hazard due to radiation exposure. Therefore, a quick demonstration of measurement of doses following the accident is needed to reassure those receiving insignificant or low level of exposures that they are quite safe and need no treatment. This confidence building also becomes an important aspect of dosimetry. As the ranges of doses which could be encountered in such situations may vary from the background level to significantly high doses depending on the type of accident / incident and the location of personnel, it becomes important that the techniques used in retrospective dosimetry should be very sensitive and should be able to measure doses in a wide range from background level to several Gy. More recently, with the increasing apprehensions of nuclear terrorism / dirty bomb, research and developments in retrospective dosimetry has gained a new momentum the world over. Among the TL and OSL sensitive materials, the extraction and the processing of the materials from bricks and roof tiles is a very time consuming process and gives indirect estimate of individual doses. On the other hand, TL and OSL properties of components of electronic devices mobile phones, i-pods, black-berries, mp3 players and USB sticks containing ceramics with luminescence properties (e.g resistors, capacitors, resonators, antenna switches, transistors etc.) and chip cards containing silica epoxy (e.g. credit cards, bank cards, social security card, telephone card, SIM cards, ID cards e.g) are being considered very attractive and being evaluated. In this study, the TL and OSL properties of the electronic components of mobile phones are investigated and dose recovery potential is evaluated with a presumption that a mobile phone has become a part of body belongings masses of almost ages

  14. Properties and growth peculiarities of Si{sub 0.30}Ge{sub 0.70} stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hikavyy, A., E-mail: Andriy.Hikavyy@imec.be; Rosseel, E.; Kubicek, S.; Mannaert, G.; Favia, P.; Bender, H.; Loo, R.; Horiguchi, N.

    2016-03-01

    Integration of Si{sub 0.30}Ge{sub 0.70} in the Source/Drain (S/D) areas of metal oxide semiconductor transistors built according to 14 nm technological node rules has been shown. SiGe properties and growth peculiarities are presented and elaborated. In order to preserve the fin structures during a pre-epitaxy surface preparation, the H{sub 2} bake pressure had to be increased to 19,998 Pa at 800 °C. Influence of this bake on the Si recess in the S/D areas is presented. Excellent quality of both the raised and the embedded Si{sub 0.30}Ge{sub 0.70} was demonstrated by transmission electron microscopy inspections. Energy-dispersive X-ray spectroscopy measurement showed two stages of SiGe growth for the embedded case: first with a lower Ge content at the beginning of the deposition until the (111) facets are formed, and second with a higher Ge content which is governed by the growth on (111) planes. Nano-beam diffraction analysis showed that SiGe grown in the S/D areas of p-type metal-oxide-semiconductor field-effect transistor is fully elastically relaxed in the direction across the fin and partially strained along the fin. Finally, a strain accumulation effect in the chain of transistors has been observed. - Highlights: • Si{sub 0.30}Ge{sub 0.70} stressor has been implemented in the 14 nm technology node CMOS flow. • Embedded and raised variants have been investigated. • High Si{sub 0.30}Ge{sub 0.70} quality was confirmed. • Si{sub 0.30}Ge{sub 0.70} layer is elastically relaxed across the fin direction. • Partial stress presence and stress accumulation effect were observed.

  15. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  16. Thermometry using 1/8 W carbon resistors in a temperature region around 10 mK

    International Nuclear Information System (INIS)

    Kobayasi, S.; Shinohara, M.; Ono, K.

    1976-01-01

    The resistance-temperature characteristics of 1/8 W carbon resistors of grade ERC-18SG, manufactured by Matsushita, with the nominal values of 48, 82, 100, 220 and 330 Ω have been measured in the region 4.2 K to 25 mK and their application as thermometers in this region is confirmed. For the 82 Ω resistor, measurements were taken at temperatures below 10mK. The temperature dependence of the resistance was found to be linear on the log-log plot over a wide range below 50 mK. The sensitivity remains finite even at 6 mK, but below 10 mK rapid measurements were prevented by a considerable increase in the thermal relaxation time. Measurement of the characteristics of several 100 Ω resistors from two different sets showed that resistors from the same set separate into two groups with different characteristics. This become appreciable at temperatures below 4.2 K, so it is difficult to predict the behaviour of Matsushite resistors below 4.2 K from the characteristics at higher temperatures. (author)

  17. Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor.

    Science.gov (United States)

    Wang, Xiaozhen; Lu, Tianjian; Yu, Xin; Jin, Jian-Ming; Goddard, Lynford L

    2017-07-04

    We studied the nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtained consistent results. In the theoretical analysis, we used a three-dimensional coupled electrical-thermal-mechanical simulation and obtained the temperature and displacement field of the suspended resistor under a direct current (DC) input voltage. In the experiment, we recorded a sequence of images of the axial thermal expansion of the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumination diffraction phase microscopy (epi-DPM). This method accurately measured nanometer level relative height changes of the resistor in a temporally and spatially resolved manner. Upon application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance of 1.14 Ω and in relative height of 3.5 nm, which agreed reasonably well with the predicted values of 1.08 Ω and 4.4 nm, respectively.

  18. Logic delays of 5-μm resistor coupled Josephson logic

    International Nuclear Information System (INIS)

    Sone, J.; Yoshida, T.; Tahara, S.; Abe, H.

    1982-01-01

    Logic delays of resistor coupled Josephson logic (RCJL) have been investigated. An experimental circuit with a cascade chain of ten RCJL OR gates was fabricated using Pb-alloy Josephson IC technology with 5-μm minimum linewidth. Logic delay was measured to be as low as 10.8 ps with power dissipation of 11.7 μW. This demonstrates a switching operation faster than those reported for other Josephson gate designs. Comparison with computer-simulation results is also presented

  19. Quantum resistor-capacitor circuit with Majorana fermion modes in a chiral topological superconductor.

    Science.gov (United States)

    Lee, Minchul; Choi, Mahn-Soo

    2014-08-15

    We investigate the mesoscopic resistor-capacitor circuit consisting of a quantum dot coupled to spatially separated Majorana fermion modes in a chiral topological superconductor. We find substantially enhanced relaxation resistance due to the nature of Majorana fermions, which are their own antiparticles and are composed of particle and hole excitations in the same abundance. Further, if only a single Majorana mode is involved, the zero-frequency relaxation resistance is completely suppressed due to a destructive interference. As a result, the Majorana mode opens an exotic dissipative channel on a superconductor which is typically regarded as dissipationless due to its finite superconducting gap.

  20. A novel water resistor divider with a coaxial low-voltage arm.

    Science.gov (United States)

    Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

    2010-03-01

    A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

  1. Current redistribution in resistor networks: Fat-tail statistics in regular and small-world networks.

    Science.gov (United States)

    Lehmann, Jörg; Bernasconi, Jakob

    2017-03-01

    The redistribution of electrical currents in resistor networks after single-bond failures is analyzed in terms of current-redistribution factors that are shown to depend only on the topology of the network and on the values of the bond resistances. We investigate the properties of these current-redistribution factors for regular network topologies (e.g., d-dimensional hypercubic lattices) as well as for small-world networks. In particular, we find that the statistics of the current redistribution factors exhibits a fat-tail behavior, which reflects the long-range nature of the current redistribution as determined by Kirchhoff's circuit laws.

  2. Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

    Science.gov (United States)

    Hamou, R F; Macdonald, J R; Tuncer, E

    2009-01-14

    How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

  3. The Development Of Windows Service Based Data Log System Using Light Dependent Resistor And Thingspeak IOT Cloud Platform

    Directory of Open Access Journals (Sweden)

    Tristan Jay P. Calaguas

    2017-03-01

    Full Text Available Microcontrollers are using in control and information processing it can be used in wide application such as agriculture health care commercial facilities robotics and education. These micro controllers are computers in chip that comprises of input and output ports central processing unit registers and main memory as well as communication interface such as Ethernet interface serial interface High Definition Multimedia Interface power source and many existing interface that can be found in this type of computer. In this study the researcher decided to conceptualize an innovative application of this type of computer where it has a potential to use as tracking system in specific individuals activities. Since some of office people are complaining in CCTV camera about their privacy this innovative concept of technology is in similar purpose but if we will compare the application concept in closed circuit camera the researcher decided to use visual graph instead video data that is in high exposure In the first phase the researcher made a concept on how the simple Light Dependent Resistor will apply in Schools Office Environment Application domain using microcontroller that was used as data log system and how this can be optimized without forcing the Dean or any designated person in office to operate it in hand due to their busy working hours. In the second phase the researcher develop the proposed data log system that are acquiring data through light luminance from fluorescent light of deans office and sending it in the IOT cloud platform. The researcher used fuzzy logic theory to model the operation of the proposed data log system. This study used experimental type of research when the prototype was developed during second phase the researcher simulated the operation. As the result the proposed data log system is sending data to Thingspeak IOT Cloud platform it displays the correct output which based from the rules and it is in column graph content

  4. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  5. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  6. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  7. Semiconductor devices for all-optical regeneration

    DEFF Research Database (Denmark)

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    2003-01-01

    We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

  8. Optical Properties of Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  9. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  10. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  11. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  12. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse......We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  13. Ion implantation methods for semiconductor substrates

    International Nuclear Information System (INIS)

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  14. A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply

    Energy Technology Data Exchange (ETDEWEB)

    Mi, J.; Tan, Y.; Zhang, W.

    2011-03-28

    For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

  15. Thermal analysis and temperature characteristics of a braking resistor for high-speed trains for changes in the braking current

    Science.gov (United States)

    Lee, Dae-Dong; Kang, Hyun-Il; Shim, Jae-Myung

    2015-09-01

    Electric brake systems are used in high-speed trains to brake trains by converting the kinetic energy of a railway vehicle to electric energy. The electric brake system consists of a regenerative braking system and a dynamic braking system. When the electric energy generated during the dynamic braking process is changed to heat through the braking resistor, the braking resistor can overheat; thus, failures can occur to the motor block. In this paper, a braking resistor for a high-speed train was used to perform thermal analyses and tests, and the results were analyzed. The analyzed data were used to estimate the dependence of the brake currents and the temperature rises on speed changes up to 300 km/h, at which a test could not be performed.

  16. Ruddlesden-Popper compounds (SrO)(LaFeO3)n (n = 1 and 2) as p-type semiconductors for photocatalytic hydrogen production

    International Nuclear Information System (INIS)

    Chen, Hongmei; Sun, Xiaoqin; Xu, Xiaoxiang

    2017-01-01

    Graphical abstract: Two layered ferrites LaSrFeO 4 and La 2 SrFe 2 O 7 have been investigated which demonstrate interesting p-type semconductivity and efficient hydrogen production from water. Display Omitted -- Abstract: Here we report two Ruddlesden-Popper type ferrite perovskites (SrO)(LaFeO 3 ) n (n = 1 and 2) which demonstrate p-type semiconductivity. Their crystal structure, optical absorption and other physicochemical properties have been systematically explored. Our results show that both ferrites crystallize in tetragonal symmetry with structural lamination along c axis. Efficient photocatalytic hydrogen production has been achieved for both samples under full range and visible light illumination. Better performance is noticed for LaSrFeO 4 with apparent quantum efficiency approaches 0.31% and 0.19% under full range and visible light illumination, respectively. The p-type semiconductivity is verified by their cathodic photocurrent as well as negative Mott-Schottky slop during Photoelectrochemical measurement. The relative lower activity for La 2 SrFe 2 O 7 compared to LaSrFeO 4 is likely due to its higher defect concentration which facilitates charge recombination. Both compounds exhibit anisotropic phenomenon for charge migrations according to theoretical calculations. Their p-type semiconductivity, strong visible light absorption, chemical inertness and high abundance of constituent elements signify promising applications in the field of solar energy conversion and optoelectronics.

  17. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  18. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  19. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  20. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  1. A Thieno[2,3-b]pyridine-Flanked Diketopyrrolopyrrole Polymer as an n-Type Polymer Semiconductor for All-Polymer Solar Cells and Organic Field-Effect Transistors

    KAUST Repository

    Chen, Hung-Yang

    2017-12-28

    A novel fused heterocycle-flanked diketopyrrolopyrrole (DPP) monomer, thieno[2,3-b]pyridine diketopyrrolopyrrole (TPDPP), was designed and synthesized. When copolymerized with 3,4-difluorothiophene using Stille coupling polymerization, the new polymer pTPDPP-TF possesses a highly planar conjugated polymer backbone due to the fused thieno[2,3-b]pyridine flanking unit that effectively alleviates the steric hindrance with both the central DPP core and the 3,4-difluorothiophene repeat unit. This new polymer exhibits a high electron affinity (EA) of −4.1 eV and was successfully utilized as an n-type polymer semiconductor for applications in organic field-effect transistors (OFETs) and all polymer solar cells. A promising n-type charge carrier mobility of 0.1 cm2 V–1 s–1 was obtained in bottom-contact, top-gate OFETs, and a power conversion efficiency (PCE) of 2.72% with a high open-circuit voltage (VOC) of 1.04 V was achieved for all polymer solar cells using PTB7-Th as the polymer donor.

  2. A Thieno[2,3-b]pyridine-Flanked Diketopyrrolopyrrole Polymer as an n-Type Polymer Semiconductor for All-Polymer Solar Cells and Organic Field-Effect Transistors

    KAUST Repository

    Chen, Hung-Yang; Nikolka, Mark; Wadsworth, Andrew; Yue, Wan; Onwubiko, Ada; Xiao, Mingfei; White, Andrew J. P.; Baran, Derya; Sirringhaus, Henning; McCulloch, Iain

    2017-01-01

    A novel fused heterocycle-flanked diketopyrrolopyrrole (DPP) monomer, thieno[2,3-b]pyridine diketopyrrolopyrrole (TPDPP), was designed and synthesized. When copolymerized with 3,4-difluorothiophene using Stille coupling polymerization, the new polymer pTPDPP-TF possesses a highly planar conjugated polymer backbone due to the fused thieno[2,3-b]pyridine flanking unit that effectively alleviates the steric hindrance with both the central DPP core and the 3,4-difluorothiophene repeat unit. This new polymer exhibits a high electron affinity (EA) of −4.1 eV and was successfully utilized as an n-type polymer semiconductor for applications in organic field-effect transistors (OFETs) and all polymer solar cells. A promising n-type charge carrier mobility of 0.1 cm2 V–1 s–1 was obtained in bottom-contact, top-gate OFETs, and a power conversion efficiency (PCE) of 2.72% with a high open-circuit voltage (VOC) of 1.04 V was achieved for all polymer solar cells using PTB7-Th as the polymer donor.

  3. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    Energy Technology Data Exchange (ETDEWEB)

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A. [London Centre for Nanotechnology, UCL, 17–19 Gordon Street, London WC1H 0AH (United Kingdom)

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  4. Low noise charge sensitive preamplifier DC stabilized without a physical resistor

    Science.gov (United States)

    Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

    1994-09-13

    The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

  5. Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

    Science.gov (United States)

    Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

    2012-04-01

    In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

  6. Resistance and resistance fluctuations in random resistor networks under biased percolation.

    Science.gov (United States)

    Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

    2002-06-01

    We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

  7. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  9. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  10. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  11. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  12. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  13. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  14. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  15. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  16. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  17. Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

    Energy Technology Data Exchange (ETDEWEB)

    Semeriyanov, F; Saphiannikova, M; Heinrich, G [Leibniz Institute of Polymer Research Dresden, Hohe str. 6, 01069 Dresden (Germany)], E-mail: fsemeriyanov@yahoo.de

    2009-11-20

    Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

  18. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  19. Study on transient stability of asynchronous wind turbine based on series dynamic braking resistor%基于串联动态制动电阻的异步风电机组暂态稳定性研究

    Institute of Scientific and Technical Information of China (English)

    肖兰; 赵斌; 李建; 范镇南

    2011-01-01

    以并网笼型异步风电机组为例,分析了利用串联动态制动电阻提高并网异步风电机组在电网故障下暂态稳定性的作用机理以及效果.建立了并网异步风电机组的数学模型,基于Matlab/Simulink仿真平台,对比分析了采用串联动态制动电阻、并联动态制动电阻以及无功补偿装置的作用效果.仿真结果表明,采用串联动态制动电阻可以有效改善并网异步风力发电机组的暂态稳定性;同时,采用串联动态制动电阻和无功补偿装置,可显著提高机组的暂态稳定性,减少对无功补偿的需求,降低风电场的运行成本.%Take the squirrel-cage type asynchronous wind turbine as example, the mechanism and efficiency of the improvement on the transient stability of wind turbine with grid-connected used by series dynamic braking resistor under the power grid fault is analyzed, the mathematical model of asynchronous wind turbine.with grid-connected is established, the transient behaviors of the wind turbine generator system using series dynamic breaking resistor, parallel dynamic breaking resistor and reactive compensation device are analyzed and compared based on Matlab/Simulink,. The simulation results have shown that the series dynamic breaking resistor can effectively improve the transient stability of asynchronous wind turbine system. Using series dynamic breaking resistor and reactive compensation device simultaneously can improve the transient stability of wind turbine generator system significantly , which reducing the reactive compensation requirement and cost of wind farm.

  20. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  1. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  2. Improvement in the voltage grading (axial and radial) of the generator column of a Van de Graaf generator by the use of a resistor chain

    International Nuclear Information System (INIS)

    Prabhakar, B.R.

    1977-01-01

    It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work. (Auth.)

  3. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  4. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  5. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  6. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  7. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dib, E., E-mail: elias.dib@for.unipi.it [Dipartimento di Ingegneria dell' Informazione, Università di Pisa, 56122 Pisa (Italy); Carrillo-Nuñez, H. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland); Cavassilas, N.; Bescond, M. [IM2NP, UMR CNRS 6242, Bât. IRPHE, Technopôle de Château-Gombert, 13384 Marseille Cedex 13 (France)

    2016-01-28

    Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

  8. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

    International Nuclear Information System (INIS)

    Dib, E.; Carrillo-Nuñez, H.; Cavassilas, N.; Bescond, M.

    2016-01-01

    Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations

  9. Electrodeposited and Sol-gel Precipitated p-type SrTi1-xFexO3-δ Semiconductors for Gas Sensing

    Directory of Open Access Journals (Sweden)

    Ralf Moos

    2007-09-01

    Full Text Available In the present contribution, three methods for the preparation of nanoscaledSrTi1-xFexO3-δ sensor films for hydrocarbon sensing were investigated. Besides screen-printed thick films based on sol-precipitated nanopowders, two novel synthesis methods,electrospinning and electrospraying, were tested successfully. All of these sensor devicesshowed improved sensor functionality in comparison to conventional microscaled thickfilms. In order to explain the impact of the enhanced surface-to-volume ratio on sensorproperties in a quantitative way, a mechanistic model was applied to micro- and nanoscaleddevices. In contrast to the conventional diffusion-reaction model that has been proposed forn-type semiconducting sensors, it contained novel approaches with respect to themicroscopic mechanism. With very few fit variables, the present model was found torepresent well sensor functionality of p-type conducting SrTi0.8Fe0.2O3-δ films. In additionto the temperature dependency of the sensor response, the effect of the specific surface areaon the sensor response was predicted.

  10. Suppression of Adverse Effects of GIC Using Controlled Variable Grounding Resistor

    Science.gov (United States)

    Abuhussein, A.; Ali, M. H.

    2016-12-01

    Geomagnetically induced current (GIC) has a harmful impact on power systems, with a large footprint. Mitigation strategies for the GIC are required to protect the integrity of the power system. To date, the adverse effects of GIC are being mitigated by either operational procedures or grounding fixed capacitors (GFCs). The operational procedures are uncertain, reduce systems' reliability, and increase energy losses. On the other hand, GFCs, incur voltage spikes, increase the transformer cost substantially, and require protection circuitry. This study investigates new possible approaches to cope with GIC, by using a controlled variable grounding resistor (CVGR), without interfering with the system's normal operation. In addition, the new techniques help suppress unsymmetrical faults in the power network. The controllability of the grounding resistor is applied using three different techniques: (1) a Parallel switch that is controlled by PI regulated duty cycle, (2) a Parallel switch that is triggered by a preset values in a look-up-table (LUT), and (3) a Mechanical resistor varied by a Fuzzy logic controller (FLC). The experimental results were obtained and validated using the MATLAB/SIMULINK software. A hypothetical power system that consists of a generator, a 765kv, 500 km long transmission lines connecting between a step-up, Δ-Yn, transformer, and a step-down, Yn-Δ, transformer, is considered. The performance of the CVGR is compared with that of the GFC under the cases of GIC event and unsymmetrical faults. From the simulation results, the following points are concluded: The CVGR effectively suppresses the GIC flowing in the system. Consequently, it protects the transformers from saturation and the rest of the system from collapsing. The CVGR also reduces the voltage and power swings associated with unsymmetrical faults and blocks the zero sequence current flowing through the neutral of the transformer. The performance of the CVGR surpasses that of the GFC in

  11. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  12. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian

    2011-11-16

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm -2). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular. © 2011 American Chemical Society.

  13. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  14. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  15. Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

    NARCIS (Netherlands)

    Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2009-01-01

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

  16. A novel Silicon Photomultiplier with bulk integrated quench resistors: utilization in optical detection and tracking applications for particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Petrovics, Stefan, E-mail: stp@hll.mpg.de [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Andricek, Ladislav [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Diehl, Inge; Hansen, Karsten [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Jendrysik, Christian [Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg (Germany); Krueger, Katja [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Lehmann, Raik; Ninkovic, Jelena [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Reckleben, Christian [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Richter, Rainer; Schaller, Gerhard; Schopper, Florian [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Sefkow, Felix [DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

    2017-02-11

    Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes (PMTs) in many applications, thanks to ongoing developments and advances in their technology. Conventional SiPMs are generally an array of avalanche photo diodes, operated in Geiger mode and read out in parallel, thus leading to the necessity of a high ohmic quenching resistor. This resistor enables passive quenching and is usually located on top of the array, limiting the fill factor of the device. In this paper, a novel detector concept with a bulk integrated quenching resistor will be recapped. In addition, due to other advantages of this novel detector design, a new concept, in which these devices will be utilized as tracking detectors for particle physics applications will be introduced, as well as first simulation studies and experimental measurements of this new approach. - Highlights: • A novel SiPM concept with bulk integrated quenching resistor is shown. • First prototypes of these SiPMs as tracking detectors are proposed. • Simulations of the Geiger efficiency suggest feasible operations at low overbias. • First measurements of the electron detection efficiency show promising results. • Measurements are in good agreement with the simulations.

  17. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F, Junior, Sebastiao V [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  18. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    Science.gov (United States)

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  19. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian; Dualeh, Amalie; Kessler, Florian; Baranoff, Etienne; Cevey-Ha, Ngoc-Lê ; Yi, Chenyi; Nazeeruddin, Mohammad K.; Grä tzel, Michael

    2011-01-01

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co

  20. Two-point resistance of a resistor network embedded on a globe.

    Science.gov (United States)

    Tan, Zhi-Zhong; Essam, J W; Wu, F Y

    2014-07-01

    We consider the problem of two-point resistance in an (m-1) × n resistor network embedded on a globe, a geometry topologically equivalent to an m × n cobweb with its boundary collapsed into one single point. We deduce a concise formula for the resistance between any two nodes on the globe using a method of direct summation pioneered by one of us [Z.-Z. Tan, L. Zhou, and J. H. Yang, J. Phys. A: Math. Theor. 46, 195202 (2013)]. This method is contrasted with the Laplacian matrix approach formulated also by one of us [F. Y. Wu, J. Phys. A: Math. Gen. 37, 6653 (2004)], which is difficult to apply to the geometry of a globe. Our analysis gives the result in the form of a single summation.

  1. A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.

    Science.gov (United States)

    Zackriya, Mohammed; Kittur, Harish M; Chin, Albert

    2017-02-10

    The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

  2. Resistor mesh model of a spherical head: part 2: a review of applications to cortical mapping.

    Science.gov (United States)

    Chauveau, N; Morucci, J P; Franceries, X; Celsis, P; Rigaud, B

    2005-11-01

    A resistor mesh model (RMM) has been validated with reference to the analytical model by consideration of a set of four dipoles close to the cortex. The application of the RMM to scalp potential interpolation was detailed in Part 1. Using the RMM and the same four dipoles, the different methods of cortical mapping were compared and have shown the potentiality of this RMM for obtaining current and potential cortical distributions. The lead-field matrices are well-adapted tools, but the use of a square matrix of high dimension does not permit the inverse solution to be improved in the presence of noise, as a regularisation technique is necessary with noisy data. With the RMM, the transfer matrix and the cortical imaging technique proved to be easy to implement. Further development of the RMM will include application to more realistic head models with more accurate conductivities.

  3. Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

    Science.gov (United States)

    Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

    2006-02-28

    The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

  4. Logarithmic corrections to scaling in critical percolation and random resistor networks.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2003-09-01

    We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.

  5. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  6. The 'emergent scaling' phenomenon and the dielectric properties of random resistor-capacitor networks

    CERN Document Server

    Bouamrane, R

    2003-01-01

    An efficient algorithm, based on the Frank-Lobb reduction scheme, for calculating the equivalent dielectric properties of very large random resistor-capacitor (R-C) networks has been developed. It has been used to investigate the network size and composition dependence of dielectric properties and their statistical variability. The dielectric properties of 256 samples of random networks containing: 512, 2048, 8192 and 32 768 components distributed randomly in the ratios 60% R-40% C, 50% R-50% C and 40% R-60% C have been computed. It has been found that these properties exhibit the anomalous power law dependences on frequency known as the 'universal dielectric response' (UDR). Attention is drawn to the contrast between frequency ranges across which percolation determines dielectric response, where considerable variability is found amongst the samples, and those across which power laws define response where very little variability is found between samples. It is concluded that the power law UDRs are emergent pr...

  7. Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2012-01-31

    LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

  8. Measurement of small ion beams by thermal ionisation mass spectrometry using new 10(13) Ohm resistors.

    Science.gov (United States)

    Koornneef, J M; Bouman, C; Schwieters, J B; Davies, G R

    2014-03-28

    We tested 5 newly manufactured - prototype - 10(13)Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10(11)Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2×10(-16) to 1×10(-12) A, corresponding to intensities of 32 μV to 100 mV on a default 10(11)Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10(13) compared 10(12)Ohm resistors and to the default 10(11)Ohm resistors. At an (87)Sr ion current of 3×10(-14) A (3 mV on a 10(11)Ohm amplifier) the internal precision (2 SE) of (87)Sr/(86)Sr is 5 times better for 10(13)Ohm resistors compared to 10(11)Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low (87)Sr/(86)Sr compared to the long term average (e.g. 10 pg average=0.710083±164 (n=11) instead of 0.710244±12, n=73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the data. The external reproducibility of (143)Nd/(144)Nd on 100 pg samples is 125 ppm and 3.3‰ on 10 pg samples (2 RSD=relative standard deviation, n=10). Thus, variability in Nd and Sr isotope ratios in the 4th decimal place, e.g. (143)Nd/(144)Nd 0.5110-0.5119 or (87)Sr/(86)Sr 0.7100-0.7109, can be resolved in 10 to 100 pg samples provided that the procedural blanks and chemical separation are optimal. For measurements in the beam

  9. Thermocapillary actuation by optimized resistor pattern: bubbles and droplets displacing, switching and trapping.

    Science.gov (United States)

    Selva, Bertrand; Miralles, Vincent; Cantat, Isabelle; Jullien, Marie-Caroline

    2010-07-21

    We report a novel method for bubble or droplet displacement, capture and switching within a bifurcation channel for applications in digital microfluidics based on the Marangoni effect, i.e. the appearance of thermocapillary tangential interface stresses stemming from local surface tension variations. The specificity of the reported actuation is that heating is provided by an optimized resistor pattern (B. Selva, J. Marchalot and M.-C. Jullien, An optimized resistor pattern for temperature gradient control in microfluidics, J. Micromech. Microeng., 2009, 19, 065002) leading to a constant temperature gradient along a microfluidic cavity. In this context, bubbles or droplets to be actuated entail a surface force originating from the thermal Marangoni effect. This actuator has been characterized (B. Selva, I. Cantat, and M.-C. Jullien, Migration of a bubble towards a higher surface tension under the effect of thermocapillary stress, preprint, 2009) and it was found that the bubble/droplet (called further element) is driven toward a high surface tension region, i.e. toward cold region, and the element velocity increases while decreasing the cavity thickness. Taking advantage of these properties three applications are presented: (1) element displacement, (2) element switching, detailed in a given range of working, in which elements are redirected towards a specific evacuation, (3) a system able to trap, and consequently stop on demand, the elements on an alveolus structure while the continuous phase is still flowing. The strength of this method lies in its simplicity: single layer system, in situ heating leading to a high level of integration, low power consumption (P < 0.4 W), low applied voltage (about 10 V), and finally this system is able to manipulate elements within a flow velocity up to 1 cm s(-1).

  10. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  11. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  12. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  13. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  14. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  15. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  16. High throughput semiconductor deposition system

    Science.gov (United States)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  17. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  18. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  19. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  20. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.